201018734 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種靶材之製造方法，詳言之，係關於 一種含貴金屬滅鑛把材之製造方法。 【先前技術】 硬碟為現代用來儲存大量資料之主要裝置，而資料主要 是存放在硬碟碟片上之磁性薄膜記錄層，該磁性薄膜記錄 鲁 層主要成分是具有鉑（Pt)貴金屬之鈷（Co)基合金材料。習 知該磁性薄膜記錄層係利用一濺鍍用之靶材，以滅鍵 (Sputtering)製程方式披覆於硬碟碟片上。 在習知技術中，鈷鉻鉑-二氡化矽（CoCrPt_Si〇2)薄膜是 目前高容量硬碟之磁記錄薄膜主要之材料。其中，由於内 含Si〇2陶瓷，因此需採用粉末冶金製程來製備 靶材，亦即，選用Co粉、Cr粉、Pt粉與Si〇2粉充分混合， 或選用CoCrPt預合金粉與Si〇2粉充分混合之後，再利用熱 φ 麼製程或熱均壓製程將靶材成型及緻密化。 習知之粉體混合方式分為乾式混粉及濕式混粉兩種，二 者主要之差異在於是否選擇於溶液中進行混粉但無論採 用何種混粉方式，都需先克服金屬粉體與陶瓷粉體比重差 異甚大而無法均勻混合之問題。 圖1顯不習知CoCrPt-Si〇2靶材之顯微組織結構圖，其 中，最大粒徑之顆粒係為Pt，顏色最深部分係為si〇2 ^由 圖1之顯微組織結構圓（放大100倍）可清楚看出，習知 CoCrPt-Si〇火材中之c〇、Cr、㈣si〇2成分其分佈極為不 135678.doc 201018734 均勻，亦即，習知乾材製造方法確實無法均勾混合粉、 Cr粉、Pt粉與Si〇2粉。 有必要提供一創新且富有進步性之含貴金屬濺鍍 靶材之製造方法，以解決上述問題。 【發明内容】 本發明提供-種含貴金屬崎㈣之製造方法，該製造 方法包括：⑷提供貴金屬粉體及陶瓷粉體；⑻將該貴金 籲屬粉體及該陶究粉體於一溶劑中進行一第一濕式混粉步 驟，以形成貴金屬-陶免漿體，纟中該陶瓷粉體結合於該 貴金屬粉體之表面；（c)加入磁性金屬粉體於該貴金屬肩 究漿體中進行-第二濕式混粉步驟，以形成磁性金屬-貴 金屬-陶瓷漿體；（d)乾燥該磁性金屬_貴金屬陶瓷漿體， 以形成磁性金屬-貴金屬-陶瓷複合粉體；及（e)成型及緻密 化該磁性金屬-貴金屬·陶瓷複合粉體，以形成含貴金屬之 濺鍵靶材。 • 本發明之製造方法係先利用第一濕式混粉步驟，將比重 較低、硬度較高之陶瓷粉體均勻地結合於比重較高、硬度 較低之貴金屬粉體表面，接著將磁性金屬粉體加入至貴金 屬-陶瓷漿體中，再以第二濕式混粉步驟進行均句混合， 並經由乾燥製程後，取得含磁性金屬·貴金屬_陶瓷之複合 粉體，最後利用成型及緻密化製程將該磁性金屬·貴金屬一 陶瓷複合粉體’以製成組織細緻、均勻且緻密之含貴金屬 濺鍍靶材’其中’該含貴金屬靶材可應用於磁記錄產業、 光電產業或半導體產業之薄膜濺鍍製程。 135678.doc 201018734 【實施方式】 圖2顯示本發明含責金屬濺鍍靶材之製造方法之流程 圖。首先，參考步驟S21，提供貴金屬粉體及陶瓷粉體， 該等粉體之純度較佳係大於99.5%。在本實施例中，該責 金屬係為鉑’且該鉑金屬粉體及該陶瓷粉體之純度係大於 99.95% 〇 在本實施例中，該陶瓷粉體係選用二氧化矽（Si〇2)、二 0 氧化鈦（Ti〇2)、一氧化鈷（CoO)、五氧化二鈕（Ta2〇5)、三 氧化二釔（Y2〇3)或五氧化二鈮（Nb2〇5)e其中，該陶瓷粉體 之粒徑較佳為0·07至1.0微米（μηι)。 參考步驟S22，將該陶瓷粉體及該貴金屬粉體於一溶劑 (例如.水或酒精）中進行一第一濕式混粉步驟，以形成貴 金屬-陶瓷漿體。在本實施例令，該第一濕式混粉步驟係 於一混合裝置（例如：球磨機）中進行。其中，硬度較高之 該陶究粉體經a亥第一濕式混粉步驟後，可結合於硬度較低 Φ 之該貴金屬粉體之表面（例如：陶瓷粉體鑲嵌於貴金屬粉 體之表面）。其中，該第一濕式混粉步驟較佳之混合時間 為0.5至4小時。 參考步驟S23，在該貴金屬-陶究漿體中加入磁性金屬粉 體，並進行一第一濕式混粉步驟，以形成磁性金屬_貴金 屬-陶瓷漿體。其中，該磁性金屬粉體可為鈷或鈷鉻合 金，該第二濕式混粉步驟較佳之混合時間為4至2〇小時。 參考步驟S24，乾燥該磁性金屬·貴金屬·陶瓷漿體，以 形成磁性金屬_貴金屬_陶瓷複合粉體。在本實施例中，係 135678.doc -8 - 201018734 、 乾燥方法或大氣乾燥方法進行該磁性金屬_貴金屬- 。陶兗裝體之乾燥。其中，真空乾燥之溫度係為紙至12〇 真空乾燥時間係為2至4小時，冑空乾燥之真空度小於 760托（torr) ’大氣乾燥之溫度係為1〇〇。匸至_。匸，大氣乾 燥時間係為4至6小時。 #考步驟S25 ’成型及敏密化混合後之該磁性金屬貴金 屬-陶竟複合粉體，以形成本發明含貴金屬濺鍍靶材，其 φ 中，本發明含貴金屬靶材可應用於磁記錄產業、光電產業 或半導體產業之薄膜減鍵製程。在^實施例中，係以熱壓 (hot pressing)製程或熱均壓（h〇t is〇static pressing)製程進 行該成型及緻密化步驟，其中，成型及緻密化之溫度係為 800 C至1200t，成型及緻密化之時間係為1至4小時。 在本發明含貴金屬濺鍍靶材中，該陶瓷粉體較佳之重量 百分比係為5%至12%，該貴金屬粉體較佳之重量百分比係 為20°/。至50% ’其餘之重量百分比係為該磁性金屬粉體之 # 含量。在本實施例中，該磁性金屬粉體係為鈷鉻合金，其 中該陶瓷粉體之重量百分比為5%至丨2% ,該貴金屬粉體之 重置百为比為20%至50% ’該始絡合金之絡之重量百分比 係為4%至16% ’其餘之重量百分比為該鈷鉻合金之鈷之重 量百分比。 茲以下列實例予以詳細說明本發明，唯並不意謂本發明 僅侷限於此等實例所揭示之内容。 實例1 : 本實例係以鈷鉻鉑-二氧化矽（CoCrPt-Si02)合金濺鍍靶 135678.doc 201018734 材之製作為例。首先，提供純度高達99.95%以上之鉑（Pt) 粉及二氧化矽（Si〇2)粉（粒徑0.25 μιη)。接著，將Pt粉及 Si〇2粉體放入去離水中進行一第一濕式混粉步驟2小時， 以形成一Pt-Si02漿體。接著，將co粉與Cr粉加入Pt_si〇2 漿體中進行一第二濕式混粉步驟丨8小時，以形成一 CoCrPt-Si〇2漿體’其中，鈷粉及鉻粉之純度高達99 9%以 上。接著，將CoCrPt-Si02漿體放入一大氣烘箱中進行大 氣乾燥步驟’其中，乾燥溫度係為160〇c，乾燥時間為6小 時。最後’取乾燥後之CoCrPt-Si02粉體，放入一石墨模 具中’以熱壓方式，在11 〇〇、持溫4小時之條件下，將 混合粉體壓成乾材形狀並將乾材緻密化之後，即可製得組 織細敏、均勻之CoCrPt-Si02乾材。在本實例中，所製得 之該CoCrPt-Si〇2乾材中钻之含量為百分之四十四重量百 分比（44 wt·%) ’鉻之含量為4 wt.%的，鉑之含量為45 wt.0/〇，二氧化石夕之含量為7 wt.〇/o。 實例2 : 本實例係以鈷鉻鉑-二氧化鈥（C〇CrPt_Ti〇2)合金濺鍍靶 材之製作為例。首先，提供純度高達99 95%以上之鉑（Pt) 物及一軋化碎（Ti〇2)粉（粒徑〇.〇7 μιη)。接著，將pt粉及 Ti〇2粉體放入酒精中進行一第一濕式混粉步驟1小時以 形成一Pt-Ti02漿體。接著，將c〇粉與〇粉加入Pt-Ti02漿 體中進行一第一濕式混粉步驟12小時’以形成一 c〇CrPt_ Ti〇2漿體，其中，鈷粉及鉻粉之純度高達99 9%以上。接 著，將C〇CrPt-Ti〇2漿體放入一真空烘箱中，在真空度為 135678.doc 201018734 76 torr中進行真空乾燥步驟，其中，乾燥溫度係g8〇〇c， 乾燥時間為2小時。最後，取乾燥後之c〇Crpt_Ti〇2粉體， 以不鏽鋼封罐（canning)之後，以熱均壓方式在8〇〇乞、持 溫2小時的條件下，將粉體壓成靶材形狀並將靶材緻密化 之後’即可製得組織細緻、均勻之C〇CrPt-Ti02靶材。在 本實例中，所製得之該C〇CrPt-Ti02靶材中鈷之含量為48 wt.%，鉻之含量為13 wt·%，鉑之含量為31 wt %，二氧化 鈦之含量為8 wt.%。 圖3顯示本發明含貴金屬濺鍍靶材製造方法所製得之含 貴金屬濺鍍靶材之顯微組織結構圖。由圖3之顯微組織結 構圖（放大100倍）可清楚看出，本發明含貴金屬濺鍍靶材令 之磁性金屬、鉑金屬及陶瓷成分其分佈極為均勻，亦即， 本發明含貴金屬濺鍍靶材製造方法確實可均勻混合磁性金 屬粉體、貴金屬粉體及陶瓷粉體，以形成組織細緻、均勻 且緻密之含貴金屬濺鍍靶材。 本發明之製造方法，係先利用第一濕、式混粉步驟，將比 重較低、硬度較高之陶瓷粉體均勻地結合於比重較高、硬 度較低之貴金屬粉體表面，接著將磁性金屬粉體加入至責 金屬-陶瓷漿體中，再以第二濕式混粉步驟進行均勻混 合，並經由乾燥製程後，取得含磁性金屬_貴金屬_陶竞之 複合粉體，最後利用成型及緻密化製程將該磁性金屬貴 金屬-陶瓷複合粉體’以製成組織細緻、均勻且緻密之含 貴金屬濺鍵靶材。 上述實施例僅為說明本發明之原理及其功效，並非限制 135678.doc -11 . 201018734 本發明。因此習於此技術之人士對上述實施例進行修改及 變化仍不脫本發明之精神。本發明之權利範圍應如後述之 申請專利範圍所列。 【圖式簡單說明】 圖1顯示習知c〇CrPt-Si〇2靶材之顯微組織結構圖； 圖圖2顯示本發明含貴金屬濺鍍靶材之製造方法之流程 土圖3顯不本發明含貴金屬濺鍍靶材製造方法所製得之含 貝金屬蹲鍍靶材之顯微組織結構圖。 3 135678.doc 12-201018734 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD The present invention relates to a method for producing a target, and more particularly to a method for producing a noble metal-containing ore-killing material. [Prior Art] A hard disk is a modern main device for storing a large amount of data, and the data is mainly a magnetic film recording layer stored on a hard disk, and the main component of the magnetic film is a platinum (Pt) noble metal. Cobalt (Co) based alloy material. It is known that the magnetic film recording layer is coated on a hard disk by a sputtering process using a sputtering target. In the prior art, a cobalt chromium-platinum-bismuth (CoCrPt_Si〇2) film is a main material of a magnetic recording film of a high-capacity hard disk. Among them, due to the inclusion of Si〇2 ceramics, it is necessary to use a powder metallurgy process to prepare the target, that is, Co powder, Cr powder, Pt powder and Si〇2 powder are mixed well, or CoCrPt prealloy powder and Si〇 are selected. 2 After the powder is thoroughly mixed, the target is shaped and densified by a heat φ process or a heat equalization process. The conventional powder mixing method is divided into dry mixed powder and wet mixed powder. The main difference between the two is whether or not to choose the mixed powder in the solution, but no matter which mixing method is adopted, the metal powder and the metal powder must be overcome first. The ceramic powders have a large difference in specific gravity and cannot be uniformly mixed. Figure 1 shows the microstructure of the CoCrPt-Si〇2 target, in which the particle size of the largest particle size is Pt, and the deepest part of the color is si〇2 ^The microstructure of Figure 1 is round ( It can be clearly seen that the distribution of c〇, Cr, and (iv) si〇2 components in the conventional CoCrPt-Si 〇 fire material is extremely 135678.doc 201018734 uniform, that is, the conventional dry material manufacturing method can not be uniformly mixed. Powder, Cr powder, Pt powder and Si〇2 powder. It is necessary to provide an innovative and progressive method of manufacturing precious metal sputter targets to solve the above problems. SUMMARY OF THE INVENTION The present invention provides a method for producing a noble metal containing metal (four), the method comprising: (4) providing a precious metal powder and a ceramic powder; (8) the precious gold powder and the ceramic powder in a solvent Performing a first wet mixing step to form a noble metal-ceramic slurry in which the ceramic powder is bonded to the surface of the precious metal powder; (c) adding a magnetic metal powder to the noble metal shoulder slurry Performing a second wet mixing step to form a magnetic metal-precious metal-ceramic slurry; (d) drying the magnetic metal-precious metal ceramic slurry to form a magnetic metal-precious metal-ceramic composite powder; and (e Forming and densifying the magnetic metal-precious metal/ceramic composite powder to form a splash-bonding target containing a noble metal. The manufacturing method of the present invention firstly uses the first wet mixing step to uniformly bond the ceramic powder having a lower specific gravity and higher hardness to the surface of the noble metal powder having a higher specific gravity and a lower hardness, and then the magnetic metal. The powder is added to the precious metal-ceramic slurry, and then mixed in the second wet mixing step, and after the drying process, the composite powder containing the magnetic metal/precious metal_ceramic is obtained, and finally the molding and densification are utilized. The magnetic metal/precious metal-ceramic composite powder is processed to form a fine, uniform and dense noble metal-containing sputtering target material, wherein the precious metal target can be used in the magnetic recording industry, the photoelectric industry or the semiconductor industry. Thin film sputtering process. 135678.doc 201018734 [Embodiment] FIG. 2 is a flow chart showing a method of manufacturing a metal-containing sputtering target according to the present invention. First, referring to step S21, a precious metal powder and a ceramic powder are provided, and the purity of the powders is preferably greater than 99.5%. In this embodiment, the metal is platinum and the purity of the platinum metal powder and the ceramic powder is greater than 99.95%. In this embodiment, the ceramic powder system uses cerium oxide (Si〇2). TiO2 (Ti〇2), cobalt monoxide (CoO), bismuth pentoxide (Ta2〇5), antimony trioxide (Y2〇3) or bismuth pentoxide (Nb2〇5)e, The particle diameter of the ceramic powder is preferably from 0.07 to 1.0 μm (μηι). Referring to step S22, the ceramic powder and the precious metal powder are subjected to a first wet mixing step in a solvent (e.g., water or alcohol) to form a noble metal-ceramic slurry. In the present embodiment, the first wet mixing step is carried out in a mixing device (e.g., a ball mill). Wherein, the ceramic powder having a higher hardness can be bonded to the surface of the noble metal powder having a lower hardness Φ after the first wet mixing step of ahai (for example, the ceramic powder is set on the surface of the precious metal powder) ). Wherein, the first wet mixing step preferably has a mixing time of 0.5 to 4 hours. Referring to step S23, magnetic metal powder is added to the noble metal-ceramic slurry, and a first wet mixing step is performed to form a magnetic metal-precious metal-ceramic slurry. Wherein, the magnetic metal powder may be cobalt or cobalt chromium alloy, and the second wet mixing step preferably has a mixing time of 4 to 2 hours. Referring to step S24, the magnetic metal/precious metal ceramic slurry is dried to form a magnetic metal-precious metal-ceramic composite powder. In the present embodiment, the magnetic metal_precious metal- is carried out by a method of drying 135678.doc -8 - 201018734, a drying method or an atmospheric drying method. The drying of the pottery pottery. The vacuum drying temperature is from paper to 12 Torr, the vacuum drying time is 2 to 4 hours, and the vacuum drying of the hollow is less than 760 Torr (torr). The atmospheric drying temperature is 1 Torr.匸 to _. Oh, the atmospheric drying time is 4 to 6 hours. #考步骤S25 'The magnetic metal precious metal-ceramic composite powder after molding and densification mixing to form the noble metal-containing sputtering target of the present invention, wherein the precious metal target of the present invention can be applied to magnetic recording Thin film reduction process in the industry, optoelectronics industry or semiconductor industry. In the embodiment, the forming and densification steps are performed by a hot pressing process or a hot pressing process, wherein the molding and densification temperature is 800 C to At 1200 t, the molding and densification time is 1 to 4 hours. In the noble metal-containing sputtering target of the present invention, the ceramic powder preferably has a weight percentage of 5% to 12%, and the noble metal powder preferably has a weight percentage of 20 °/. The remaining weight percentage to 50% ' is the # content of the magnetic metal powder. In this embodiment, the magnetic metal powder system is a cobalt chromium alloy, wherein the ceramic powder has a weight percentage of 5% to 丨2%, and the precious metal powder has a reset ratio of 20% to 50%. The weight percentage of the complex alloy is 4% to 16%. The remaining weight percentage is the weight percentage of the cobalt of the cobalt chromium alloy. The present invention is illustrated by the following examples, which are not intended to be construed as limited only. Example 1: This example is based on the fabrication of a cobalt chromium-platinum-cerium oxide (CoCrPt-SiO2) alloy sputtering target 135678.doc 201018734. First, platinum (Pt) powder and cerium oxide (Si〇2) powder (particle size 0.25 μηη) having a purity of up to 99.95% or more are provided. Next, the Pt powder and the Si〇2 powder were placed in deionized water for a first wet mixing step for 2 hours to form a Pt-SiO 2 slurry. Next, the co powder and the Cr powder are added to the Pt_si〇2 slurry for a second wet mixing step for 8 hours to form a CoCrPt-Si〇2 slurry, wherein the purity of the cobalt powder and the chromium powder is as high as 99. More than 9%. Next, the CoCrPt-SiO 2 slurry was placed in an atmospheric oven for the air drying step, wherein the drying temperature was 160 〇c and the drying time was 6 hours. Finally, the dried CoCrPt-Si02 powder was placed in a graphite mold. The mixture was pressed into a dry shape and dried in a hot press at 11 Torr for 4 hours. After densification, a fine and uniform CoCrPt-Si02 dry material can be obtained. In the present example, the content of the drilled CoCrPt-Si〇2 dry material is 44% by weight (44 wt.%), and the content of chromium is 4 wt.%. It is 45 wt.0 / 〇, and the content of the dioxide is 7 wt. 〇 / o. Example 2: This example is exemplified by the production of a cobalt chromium platinum-niobium dioxide (C〇CrPt_Ti〇2) alloy sputtering target. First, platinum (Pt) and a rolled (Ti〇2) powder (particle size 〇.〇7 μιη) having a purity of up to 99 95% or more are provided. Next, the pt powder and the Ti〇2 powder were placed in an alcohol to carry out a first wet mixing step for 1 hour to form a Pt-Ti02 slurry. Next, the c〇 powder and the tantalum powder are added to the Pt-Ti02 slurry for a first wet mixing step for 12 hours to form a c〇CrPt_Ti〇2 slurry, wherein the purity of the cobalt powder and the chromium powder is as high as More than 99%. Next, the C〇CrPt-Ti〇2 slurry was placed in a vacuum oven, and a vacuum drying step was performed in a vacuum degree of 135678.doc 201018734 76 torr, wherein the drying temperature was g8〇〇c, and the drying time was 2 hours. . Finally, the dried c〇Crpt_Ti〇2 powder was taken, and after canning with stainless steel, the powder was pressed into a target shape by heat equalization at 8 Torr for 2 hours. After the target is densified, a fine and uniform C〇CrPt-Ti02 target can be obtained. In the present example, the content of cobalt in the C〇CrPt-Ti02 target prepared was 48 wt.%, the content of chromium was 13 wt.%, the content of platinum was 31 wt%, and the content of titanium dioxide was 8 wt. .%. Fig. 3 is a view showing the microstructure of a precious metal-containing sputtering target produced by the method for producing a noble metal-containing sputtering target of the present invention. It can be clearly seen from the microstructure diagram of Fig. 3 (magnification 100 times) that the noble metal sputtering target of the present invention makes the distribution of magnetic metal, platinum metal and ceramic components extremely uniform, that is, the precious metal splash of the present invention. The plating target manufacturing method can uniformly mix the magnetic metal powder, the precious metal powder and the ceramic powder to form a fine, uniform and dense noble metal-containing sputtering target. The manufacturing method of the invention firstly uses the first wet and mixed powder mixing step to uniformly bond the ceramic powder having a lower specific gravity and higher hardness to the surface of the noble metal powder having a higher specific gravity and a lower hardness, and then magnetically The metal powder is added to the metal-ceramic slurry, and then uniformly mixed in the second wet mixing step, and after the drying process, the composite powder containing the magnetic metal_precious metal_Taojing is obtained, and finally the molding and the forming are performed. The densification process uses the magnetic metal noble metal-ceramic composite powder to form a fine, uniform and dense noble metal-containing splash target. The above-described embodiments are merely illustrative of the principles of the present invention and its effects, and are not intended to limit the scope of the present invention. Therefore, those skilled in the art can make modifications and changes to the above embodiments without departing from the spirit of the invention. The scope of the invention should be as set forth in the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a view showing the microstructure of a conventional c〇CrPt-Si〇2 target; FIG. 2 is a view showing the process of the method for producing a precious metal-containing sputtering target of the present invention. FIG. A microstructure diagram of a shellfish-containing target material prepared by the method for producing a noble metal sputtering target. 3 135678.doc 12-