201016294 六、發明說明： 【發明所屬之技術領域】 本發明有關熱阱之領域’係指真空處理系統中用以清潔從處 理區排放之氣體所使用的裝置。更明確地說，本發明揭示多種包 含丸片狀收集裝置的新穎熱阱裴置。此外，本發明亦揭示包含此 種熱阱裝置之真空處理系統。 【先前技術】 ❹ 真空處理系統在技術界中為熟知，並用於多種應用中，例如， 在光電工業或在顯示器工業中，分別用於生產薄膜太陽能電池或 薄膜電晶體(TFT)顯示器。真空處理系統通常包含一真空環境中的 基板輸送路徑。沿著該輸送路彳f，可設置各種對基板作用的處理 裝置(處理站或處理模組）’例如加熱裝置、冷卻裝置、藉由化學氣 相沉積(CVD)等進行層沉積之裝置及進行蚀刻或品質管控之裝置 等。EP0575055及US4358472號專利均顯示所謂的直列式㈣⑹) 真空處理系統。通常，真空處理系統的各個模組係藉閥件或閘門 ® 彼此分隔，以免交叉污染；同時，該等模組内的壓力係利用真空 泵(諸如前級(低度)真空泵或高度真空泵)設定為低於環境壓力（亦 即大氣壓力）。 在真空處理系統操作期間，係將處理氣體饋入處理環境，例 如，將二乙基鋅(diethylzinc，簡稱DEZ)饋入一電漿辅助化學氣相 沉積(PECVD)之沉積模組。此外，並於沉積期間處理氣體耗竭時， 將新鮮處理氣體穩流饋入處理系統。同時，各真空泵係永續操作， 以保持所需的處理壓力。因此，包含了反應副產物及/或未反應試 劑的處理氣體，係從真空處理系統連續抽空/排放。 3 201016294 然而’在模組排氣、真空泵及設備管線中常見的情況下，該 等反應副產物及/或未反應試劑易於聚合，如此可能對處理效率導 致負面效果、造成管線及真空泵阻塞、縮短生產周期時間及/或經 常需要清潔周期。尤其是’因為泵會使局部壓力從處理壓力增加 到大氣屋力並使氣體因壓縮而加熱，而使真空泵受到影響。上述 兩種效應導致真空泵内處理氣體反應增加，如此可能導致金屬或 氧化物沉積(例如從二乙基鋅沉積的鋅或氧化鋅），並進而造成泵的 使用壽命降低及通氣管路阻塞等現象。在工業規模的生產中，由 於咼基板生產量需要極高的處理氣體耗用量，所以上述問題更加⑩ 顯著。 在習知的真空處理系統中，係於真空泵的上游位置放置一收 集裝置，以便清潔排放廢氣中的反應副產物及未反應試劑。熱阱 與冷凝阱在技術界中為已知。冷凝阱可讓氣體成份凝縮或重組， 藉此去除或鈍化(inactivate)未用處理氣體及/或反應副產物的部 份。然而，冷凝阱很快就會飽和，並可能導致排放氣流中單一組 份的冷凝，如此可能危害健康，因此需要額外的安全操作要件。 技術界中已有各種不同的熱阱設計，這些設計或是在氣流路 徑内使用機械壓縮或是使用加大的表面積。這些前提的基礎在 於：處理氣體中呈現的組份，其反應是建立在表面上的。因此， 此-表面可透過機械設計來提供’或是在前—職產生的反應產 物沉積於設備(例如管線)内時形成的。 習知的熱㈣要廣泛峨繁的清潔及/或更換，且因熱牌結構 的關係’更換時需要相當多的時間。如此進而導致真^理° 運轉時間減少與維護成本增高。 系統 【發明内容】 4 201016294 本發明之目的在於提供一種熱阱裝置，可從排放的處理氣體 中輕易、有效且經濟地去除反應副產物及未反應試劑。 為達成此一目的，本發明提供之氣相沉積熱阱裝置包含：一 殼體，其包含至少一進氣口與至少一出氣口；至少一加熱裝置； 及至少一種收集裝置，以將反應副產物轉化成產物，並讓產物沉 積在收集裝置及/或殼體之内表面上。其中，該收集裝置係設於殼 體内部，位於進氣口與出氣口之間；且該至少一種收集裝置係以 丸片樣貌呈現。 ❹ 本發明之熱阱裝置，如上所述，係用於清潔從一真空處理系 統排放的氣體’並去除或局部去除反應副產物。本說明書中使用 的“反應副產物”一詞’亦包含未反應試劑，較佳為未反應之二乙 基鋅(DEZ) 〇 此外’本發明之熱阱裝置為一種適用於真空處理系統之熱阱 裝置。在本發明一實施例中’此熱阱裝置係適用於真空處理系統 之模組’該真空處理系統較佳為一直列式真空處理系統。在另一 實施例中，該真空處理系統或其模組係用於氣相沉積。在更一實 0 施例中，前述氣相沉積係選自包含物理氣相沉積(physical vapor deposition，PVD)、化學氣相沉積(chemical vapor deposition，CVD)、 低壓化學氣相沉積(LPCVD)或電漿輔助化學氣相沉積(pecvd)之 群組。其中以低壓化學氣相沉積(LPCVD)或電漿輔助化學氣相沉 積(PECVD)較佳。 在其他較佳實施例中，前述氣相沉積為梦、氧化石夕或金屬氧 化物之沉積；更佳的是氧化鋅(ZnO)或銦錫氧化物(no)之沉積。氧 化鋅層顯示了作為導電接觸材料的優異效能’可供(薄膜)太陽能電 池等應用。最佳的是’前述氣相沉積為氧化鋅之低壓化學氣相沉 5 201016294 積（ZnO-LPCVD)或氧化鋅之電漿輔助化學氣相沉積 (ZnO-PECVD)。在其他較佳實施例中，氣相沉積係用於生產各種 薄膜’較佳的是各種薄膜電晶體(TFTs)或透明導電氧化物層(TC〇 layers) ° 在更一特定實施例中，本發明之熱阱裝置適用的真空處理系 統係用於以化學氣相沉積(CVD)法處理尺寸大於或等於1平方公 尺（lm2)之基板，該基板較佳為薄玻璃板。 本發明之熱阱裝置’其殼體並不限於某一特定的幾何形狀， 只要其形狀允許在殼體内部介於進氣口與出氣口間設置收集裝 置，以便進入進氣口與離開出氣口的氣流可強制通過收集裝置。 在某些特定實施例中，該殼體為圓管形狀及/或具有圓形或方形之 橫截面。在一較佳實施例中，該殼體例如可為連接一 PECVD模組 與真空泵之管線上的加寬部份。 根據再一較佳實施例’該殼體進而包含至少一個可關閉之開 孔’例如一蓋體；最佳為一無孔凸緣(blind flange)。上述可關閉開 孔允許經由使用礦酸之化學處理來清潔殼體的内部及更換收集裝 置。較佳的是，前述之可關閉開孔係位於殼體之頂端及/或底端。 更佳的是’該殼體包含二個朝向彼此相對的可關閉開孔，例如其 中一開孔形成殼體的頂端，另一開孔則形成殼體的底端。此種安 排允許輕鬆沖洗殼體；其中之清潔試劑，例如礦酸，係穿過第一 開孔導入’再通過整個殼體，並通過第二開孔離去。在另一特定 實施例中’該殼體及/或該等可關閉開孔係使用任何可耐受大於或 等於攝氏50度且小於或等於攝氏450度溫度的適當材料製成。較 佳的是，該殼體及/或該等可關閉開孔係可耐受化學處理，例如， 可耐受使用破酸的處理。最佳的是，該殼體及/或該等可關閉開孔 201016294 係以金屬製成。 該殼體包含至少-進氣口與至少—出氣口，分別設於收集裂 置的兩對侧。在-實施例中，進氣口係與真空處理械之一處 站或模組連接，而出氣叫與-真线連接。較佳的是，進^口 係PECVD或- LPCVD沉積模組連接，更佳的是該 組係用於續氧化鋅、#、或氧切。在更—較佳實 上 述進氣口與出氣口係分別設於該殼體之頂端與底端近處。在一較 ❹ ，實施例中’該殼體包含單-進氣口與單-出氣口。:4體= 無氣π可具有任何適合的橫截卿狀與餘 空處理系統的生產量而定。 J視具 該殼體包含至少-加録置，麵有二個 明某些特定實施财，前述加絲置為至少 至少-外部加熱《置。最佳的是，該二，置及/或 虚-滅紅· ·純體包s—個内部加熱裝置 參 與-個外部加熱裝置，如此允許可靠的溫 係設於殼_部，而外部加熱裝置職於殼^ 中’加熱裝置可傳遞的溫度為大於或等= 100 200度且 度且小於或等_氏_度；較_是 、於^ :於度。在更一較佳實施例中= ::Γ :為一電熱棒。該内部加熱褒置較佳的是= 延伸至底端。更佳的是，_部加 乎她體頂端 =並可連同可關閉開孔之蓋想一起卸:係： 外部加熱裝置為-加。健的是 ^實施射，該 帶纏繞。更崎，瞻少熱 7 201016294 最佳的是，該殼體為完全隔熱。 在本發明某些特定實施例中，該内部加熱裝置係直接與收集 裝置_合’或者較佳的是，與收餘置間接油合。如以下认 述，收集裝置可設於-承架内，諸如絲—承盤或一支承籠内响 加熱裝置可與承架接觸，因此與承細容置敝集裝置間接熱搞 合。 ”、、 s根據本發明之祕賴包含至少—種收集裝置，用於將反應 副產物-包含未反應試劑·轉化成產物’轉化的產物則沉積在收集裝 置上及/或殼體之喊面上；其巾收躲置係設於紐内部介於 氣口與出氣口之間。 、 如上所述，收集裝置係設於殼體内部介於殼進氣口與出氣口 ，間。以此方式，經由進氣口進人熱賴經由出氣口離開熱味的 氣體會被_通過㈣裝置。在-較佳實施例中，收集裝置係覆 蓋熱牌的細賊面，亦即’收集裝置完全覆·_橫截面積。 此種設置的優點在於，氣體流經熱阱時，必須接觸收集裝置，而 不會沿收集裝置周圍流動。 在一較佳實施例中，轉化後的反應副產物，例如鋅及/或氧化 鋅’主要是職在絲裝置上，並有較少部份沉積在殼體的内表 面上。此種方式的優點在於不需要或者較不需要經常使用例如礦 酸沖洗來清潔殼體。如下所述，根據本發明可以更快更輕鬆地進 行收集製置的卸除/更換。因此，在一較佳實施例中，與收集裝置 的表面積相較時，殼體的内表面較小。在一更佳實施例中，、藉由 避免殼體内存在未被收集裝置覆蓋的空間’可使殼動表面保持 小面積狀態。例如，可用一或多種收集裝置來覆蓋殼體容積中大 於或等於50%、60%、70%、80%、90%的部份。 201016294 署、本發θ其收絲m丸#狀。此種丸植的收集裝 丸二’稱之。在—較佳實施例中’此等丸片的直徑為 ；A里且小於或等於100公厘；大於或等於10公厘且 於75公厘；大於或等於13公厘且小於或等於50公厘； ”於19公厘且小於或等於*公厘；或大於或等於乃公厘 ❹ °在丨—較佳實蘭_，此#丸片的長度為 二；/a厘且小於或等於5〇公厘；大於或等於^ $公厘且 小於或等㈣雜：纽鱗於9.5公胁〗、贱等於30公厘； 〇於或等於12.5公厘且小於或等於3G公厘；或大於或等於15公 】於或等於3G公厘。更佳的是，此等丸片之直徑為13公厘、 公厘或25公厘，而其長度分別為6·5公厘、9.5公厘及12.5公 厘。 在-特佳實施例中’前述收集裝置為直徑13公厘、19公厘及 或25 a厘的五環式床層覆蓋介質加迦㈣bed的卯㈣咖㈣， 可從德國的 Saint-Gobain NorPro GmbH 購得。 在更-特定實施例中，此等丸片的幾何形狀可提供大表面 參但不出現強大的雜。較麵是，此等丸#為珠狀、球狀、 圓靖狀或擠製方筒狀。在本發明之更佳實施例中此等丸片 之幾何七狀為-種五環式結構或—種蜂巢式結構，因為這些結構 可在表面與流阻之間提供良好的比率。 在更-特定實施射，製作收録置的材料是作為轉化反應 :產物的摧化劑。在更—特定實施例中之收集裝置係使用一種陶 究材料製成的。在本發明—較佳實施例中之㈣裝置包含砍、氧 化發(Si02)、銘、氧化銘(Al2〇3)、銅、氧化納师城以上各項之 組合。更㈣是，職製作收集裝置_紐料包含重量百分比 201016294 於5G則、料等㈣之氧切，及/ 於 或等於15且小於或等於5 重J刀比大於 置的陶脉他含重量百分 百分比大於或等於23且小於或等於Μ之等氧：之 i重二，用於製作收集裝置_紐料包 ，或等且小於或等於％之 到、於鱗於28之氧她。彳_置之材料 可進而包含微量的其他材料。 啊付 在本發明另一特定實施例中之收集裝置表現一大孔隙比此 -孔隙比是用一混合物中的孔隙容積除以固體之體積來定義的。 大孔隙比的優點在於可避免系統中的壓降。 在另-特定實施例中之錢裝置表現出在高溫時的物理及化 學穩疋性，前述尚溫較佳為大於或等於攝氏100度且小於或等於 攝氏600度；更佳為大於或等於攝氏2〇〇度且小於或等於攝氏45〇 度。 在另一特定實施例中之收集裝置表現出化學活性及/或催化表 面。 在一較佳實施例中，本發明之熱阱裝置係用於移除氧化鋅沉 積製程中的反應副產物。因此，其收集裝置表現出催化表面，用 以轉化氧化鋅沉積製程中的反應副產物。在工業級氧化鋅沉積製 程中，會經由一熱阱與真空泵總成從化學氣相沉積模組中，將二 乙基鋅(DEZ)及水(Η2〇)產生的大量反應副產物抽汲到排放處理系 統。但是未反應的組份(DEZ、Ηβ)易在後處理容室總成内起反 應。根據觀察，此種反應是受表面控制的，並經由水與一表面的 交互作用進行之。影響反應速率的兩個主要參數是表面積及其溫 201016294 度。其反應機理已在氧化鋅化學氣相沉積期間的分子執跡研究中 獲得確認，於茲描述如下(請看Vlgil等人發表之“氧化妙表面之交201016294 VI. Description of the Invention: Field of the Invention The field of the present invention relates to a device for cleaning a gas discharged from a treatment zone in a vacuum processing system. More specifically, the present invention discloses various novel heat sink devices that include a pellet-like collection device. In addition, the present invention also discloses a vacuum processing system incorporating such a heat sink device. [Prior Art] Vacuum processing systems are well known in the art and are used in a variety of applications, for example, in the photovoltaic industry or in the display industry, for the production of thin film solar cells or thin film transistor (TFT) displays, respectively. Vacuum processing systems typically include a substrate transport path in a vacuum environment. Along the transport path ,f, various processing devices (processing stations or processing modules) that act on the substrate can be provided, such as heating devices, cooling devices, devices for layer deposition by chemical vapor deposition (CVD), and the like. Etching or quality control devices, etc. Both EP0575055 and US Pat. No. 4,348,742 disclose so-called in-line (four) (6) vacuum processing systems. Typically, the various modules of the vacuum processing system are separated from each other by valve members or gates to avoid cross-contamination; at the same time, the pressure in the modules is set by a vacuum pump (such as a pre-stage (low-level) vacuum pump or a high-vacuum pump). Below ambient pressure (ie atmospheric pressure). During operation of the vacuum processing system, the process gas is fed into the processing environment, for example, diethylzinc (DEZ) is fed into a plasma assisted chemical vapor deposition (PECVD) deposition module. In addition, fresh process gas is steadily fed into the processing system as the process gas is depleted during deposition. At the same time, each vacuum pump operates continuously to maintain the required processing pressure. Therefore, the processing gas containing the reaction by-products and/or the unreacted reagent is continuously evacuated/discharged from the vacuum processing system. 3 201016294 However, in the case of module exhaust, vacuum pump and equipment pipelines, such reaction by-products and / or unreacted reagents are easy to polymerize, which may cause negative effects on processing efficiency, causing blockage and shortening of pipelines and vacuum pumps. Production cycle times and/or frequent cleaning cycles are required. In particular, the vacuum pump is affected because the pump increases the partial pressure from the process pressure to the atmospheric force and heats the gas due to compression. These two effects lead to an increase in the reaction gas in the vacuum pump, which may result in the deposition of metal or oxide (such as zinc or zinc oxide deposited from diethyl zinc), which in turn leads to a decrease in the service life of the pump and blockage of the vent line. . In industrial scale production, the above problems are even more pronounced because of the extremely high processing gas consumption required for the production of tantalum substrates. In a conventional vacuum processing system, a collecting device is placed upstream of the vacuum pump to clean reaction by-products and unreacted reagents in the exhaust gas. Heat traps and condensation traps are known in the art. The condensation trap allows the gas component to condense or recombine, thereby removing or inactivating portions of the unused process gas and/or reaction byproducts. However, the condensate trap will quickly saturate and may cause condensation of a single component of the venting gas stream, which may be hazardous to health and therefore require additional safe handling requirements. There are various different heat sink designs in the art world that use either mechanical compression or increased surface area in the gas flow path. These premises are based on the composition of the components present in the process gas, the reaction of which is based on the surface. Thus, the surface can be mechanically designed to provide 'or formed when the reactive product produced by the former is deposited in a device (e.g., a pipeline). The conventional heat (4) requires extensive cleaning and/or replacement, and due to the structure of the hot card, it takes a considerable amount of time to replace. This in turn leads to a reduction in the operating time and an increase in maintenance costs. System [Disclosure] 4 201016294 It is an object of the present invention to provide a heat sink apparatus that removes reaction by-products and unreacted reagents easily, efficiently, and economically from the discharged process gas. To achieve the above object, a vapor deposition thermal trap device provided by the present invention comprises: a casing comprising at least one gas inlet and at least one gas outlet; at least one heating device; and at least one collecting device to discharge the reaction The product is converted to product and the product is deposited on the inner surface of the collection device and/or housing. Wherein, the collecting device is disposed inside the casing between the air inlet and the air outlet; and the at least one collecting device is presented in the form of a pellet. The heat sink device of the present invention, as described above, is used to clean the gas discharged from a vacuum processing system and to remove or partially remove reaction by-products. The term "reaction by-product" as used in the specification also includes unreacted reagent, preferably unreacted diethylzinc (DEZ). In addition, the hot trap device of the present invention is a heat suitable for use in a vacuum processing system. Well device. In an embodiment of the invention, the heat sink device is suitable for use in a module of a vacuum processing system. The vacuum processing system is preferably a continuous vacuum processing system. In another embodiment, the vacuum processing system or module thereof is used for vapor deposition. In a further embodiment, the vapor deposition is selected from the group consisting of physical vapor deposition (PVD), chemical vapor deposition (CVD), low pressure chemical vapor deposition (LPCVD) or A group of plasma assisted chemical vapor deposition (pecvd). Among them, low pressure chemical vapor deposition (LPCVD) or plasma assisted chemical vapor deposition (PECVD) is preferred. In other preferred embodiments, the vapor deposition described above is a deposition of dreams, oxidized oxides or metal oxides; more preferably deposition of zinc oxide (ZnO) or indium tin oxide (no). The zinc oxide layer shows an excellent performance as a conductive contact material for applications such as (thin film) solar cells. Most preferably, the aforementioned vapor deposition is a low pressure chemical vapor deposition of zinc oxide 5 ZnO-LPCVD or plasma assisted chemical vapor deposition (ZnO-PECVD) of zinc oxide. In other preferred embodiments, vapor deposition is used to produce various films 'preferably various thin film transistors (TFTs) or transparent conductive oxide layers (TC 〇 layers). In a more specific embodiment, The vacuum processing system to which the inventive heat sink device is applied is for processing a substrate having a size greater than or equal to 1 square meter (lm2) by chemical vapor deposition (CVD), preferably a thin glass plate. The heat sink device of the present invention has a housing that is not limited to a specific geometry as long as its shape allows a collecting device to be provided between the air inlet and the air outlet inside the housing to enter the air inlet and the air outlet. The air flow can be forced through the collection device. In some particular embodiments, the housing is in the shape of a circular tube and/or has a circular or square cross section. In a preferred embodiment, the housing may be, for example, a widened portion of a line connecting a PECVD module to a vacuum pump. According to still another preferred embodiment, the housing further comprises at least one closable opening, such as a cover; preferably a blind flange. The above closable opening allows cleaning of the interior of the housing and replacement of the collection device via chemical treatment using mineral acid. Preferably, the aforementioned closable opening is located at the top and/or bottom of the housing. More preferably, the housing includes two closable openings that face each other, such as one of the openings forming the top end of the housing and the other opening forming the bottom end of the housing. This arrangement allows the housing to be easily flushed; a cleaning agent, such as mineral acid, is introduced through the first opening and then through the entire housing and exits through the second opening. In another particular embodiment, the housing and/or the closable openings are made of any suitable material that can withstand temperatures greater than or equal to 50 degrees Celsius and less than or equal to 450 degrees Celsius. Preferably, the housing and/or the closable openings are resistant to chemical treatment, for example, tolerant to the use of acid breakdown. Most preferably, the housing and/or the closable openings 201016294 are made of metal. The housing includes at least - an air inlet and at least an air outlet, respectively disposed on opposite sides of the collection split. In the embodiment, the air inlet is connected to a station or module of the vacuum processing machine, and the air outlet is connected to the - true line. Preferably, the inlet is a PECVD or - LPCVD deposition module, and more preferably the group is used to continue zinc oxide, #, or oxygen cutting. More preferably, the air inlet and the air outlet are respectively disposed near the top end and the bottom end of the housing. In a more conventional embodiment, the housing includes a single-inlet and a single-outlet. : 4 body = airless π can have any suitable cross-sectional shape depending on the throughput of the space treatment system. J Sight The housing contains at least - plus recording, the surface has two specific implementations, and the aforementioned filaments are placed at least at least - externally heated. Most preferably, the second, set and / or virtual - red - · pure body package s - an internal heating device participates in an external heating device, thus allowing a reliable temperature system to be placed in the shell - and external heating device The temperature that can be transmitted by the heating device in the shell ^ is greater than or equal to 100 200 degrees and the degree is less than or equal to _ _ degrees; compared _ is, in ^ : degrees. In a further preferred embodiment =::Γ: is an electric heating rod. The internal heating device preferably has a = extension to the bottom end. More preferably, the _ part is added to the top of the body = and can be unloaded together with the cover that closes the opening: Department: The external heating device is -plus. The health is ^ the implementation of the shot, the belt is wrapped. More Qi, less heat 7 201016294 Best of all, the shell is completely insulated. In some particular embodiments of the invention, the internal heating device is directly coupled to the collection device or, preferably, indirectly coupled to the remainder. As will be described below, the collection device can be located in a carrier, such as a wire-reel or a support cage. The heating device can be in contact with the carrier and thus indirectly thermally coupled to the capillary-receiving device. The secret of the invention according to the invention comprises at least one type of collecting device for converting the reaction by-products - containing unreacted reagents into products - the products of the conversion are deposited on the collecting device and/or the face of the casing The towel is disposed between the air port and the air outlet in the interior of the button. As described above, the collecting device is disposed inside the casing between the air inlet and the air outlet of the casing. The gas that enters the heat through the air inlet and exits the hot taste through the air outlet is passed through the (four) device. In the preferred embodiment, the collecting device covers the thin thief surface of the hot card, that is, the collecting device is completely covered. _ Cross-sectional area. The advantage of this arrangement is that the gas must flow through the heat sink and must contact the collection device without flowing around the collection device. In a preferred embodiment, the converted reaction by-product, such as zinc And/or zinc oxide 'is mainly on the wire device, and a small part is deposited on the inner surface of the casing. The advantage of this method is that it is not required or less frequently used to clean the shell using, for example, mineral acid rinsing. Body, as described below, root The present invention makes the removal/replacement of the collection system faster and easier. Therefore, in a preferred embodiment, the inner surface of the housing is smaller when compared to the surface area of the collection device. In an example, the housing moving surface can be kept in a small area by avoiding the space in the housing that is not covered by the collecting device. For example, one or more collecting devices can be used to cover the housing volume greater than or equal to 50%, 60. %, 70%, 80%, 90% of the parts. 201016294 Department, the Department of θ, its wire refining m pill #. This kind of pill planting is loaded with two pills. In the preferred embodiment, 'this The diameter of the pellets is: A and less than or equal to 100 mm; greater than or equal to 10 mm and 75 mm; greater than or equal to 13 mm and less than or equal to 50 mm; "at 19 mm and less than Or equal to *mm; or greater than or equal to 公 丨 ° in 丨 - preferably Shilan _, the length of this # pellet is two; / a PCT and less than or equal to 5 〇 mm; greater than or equal to ^ $ public PCT and less than or equal to (four) miscellaneous: neon scale is 9.5 comm., 贱 is equal to 30 mm; 〇 is equal to or equal to 12.5 mm and less than or Mm to 3G; or equal to or greater than or equal to 15 well 3G mm]. More preferably, the pellets have a diameter of 13 mm, mm or 25 mm and a length of 6.5 mm, 9.5 mm and 12.5 mm, respectively. In the preferred embodiment, the aforementioned collection device is a five-ring bed covering medium having a diameter of 13 mm, 19 mm and or 25 a. Gaga (four) bed 卯 (four) coffee (four), available from Saint-Gobain NorPro, Germany Purchased by GmbH. In a more particular embodiment, the geometry of such pellets provides a large surface but does not exhibit strong impurities. The face is that these pills # are beaded, spherical, rounded or extruded square. In a more preferred embodiment of the invention, the geometric shape of the pellets is a five-ring structure or a honeycomb structure because these structures provide a good ratio between surface and flow resistance. In a more specific implementation, the material produced is used as a catalyst for the conversion reaction: product. The collection device in a more particular embodiment is made using a ceramic material. The apparatus of (4) in the preferred embodiment of the present invention comprises a combination of chopping, oxidizing (Si02), Ming, Oxidation (Al2〇3), copper, and Nd. (4) is, the production production collection device _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The percentage is greater than or equal to 23 and less than or equal to 等 等 等 : 之 之 : : : : , , , , , , , , , , , , , , , , , , , , , , , , , , , , ,彳_Materials can be further contained in trace amounts of other materials. In a particular embodiment of the invention, the collection device exhibits a large void ratio - the void ratio is defined by dividing the pore volume in a mixture by the volume of solids. The advantage of a large void ratio is that the pressure drop in the system can be avoided. The money device in another specific embodiment exhibits physical and chemical stability at high temperatures, and the aforementioned temperature is preferably greater than or equal to 100 degrees Celsius and less than or equal to 600 degrees Celsius; more preferably greater than or equal to Celsius 2 degrees and less than or equal to 45 degrees Celsius. The collection device in another particular embodiment exhibits a chemically active and/or catalytic surface. In a preferred embodiment, the heat sink device of the present invention is used to remove reaction byproducts from the zinc oxide deposition process. Therefore, its collection device exhibits a catalytic surface for converting reaction by-products in the zinc oxide deposition process. In the industrial grade zinc oxide deposition process, a large amount of reaction by-products produced by diethylzinc (DEZ) and water (Η2〇) are pumped from a chemical vapor deposition module through a heat sink and vacuum pump assembly. Emission treatment system. However, the unreacted components (DEZ, Ηβ) tend to react within the post-treatment chamber assembly. According to observations, this reaction is surface controlled and carried out via the interaction of water with a surface. The two main parameters affecting the reaction rate are the surface area and its temperature 201016294 degrees. The reaction mechanism has been confirmed in the molecular obstruction study during zinc oxide chemical vapor deposition, as described below (see Vlgil et al.
Colloid and (起始)-1 (起始)-2 矣作用（Interactions of silica surfaces)，刊載於 J. Interface Science, 165:367-385,1994):Colloid and (initial)-1 (Interactions of silica surfaces, published in J. Interface Science, 165:367-385, 1994):
Zn(C2H5)2— ZnC2H5+.c2H5Zn(C2H5)2—ZnC2H5+.c2H5
ZnC2H5-^Zn +*C2H5 (傳遞)-3 (傳遞)-4 (傳遞)-5 (結束)-6 (結束)-7 H20+eC2H5 ^ C2H6+*〇h ΟZnC2H5-^Zn +*C2H5 (transfer)-3 (transfer)-4 (transfer)-5 (end)-6 (end)-7 H20+eC2H5 ^ C2H6+*〇h Ο
Zn(C2H5)2+.〇H»> Zn(〇H)C2H5+.C2H5 Zn(OH)C2H5+-〇H->Zn(〇H)2+*C2H5 •OH +.C2H5+ C2H5〇H 2.C2H5;C4H10 在以上提出的機理中，造成速率限制反應的是水分解生成游 離基(步驟3)。較高的能量(亦即較高的溫度)造成触的反應，也 會影響二乙基鋅(DEZ)分解成乙基鋅游離基(e%1 *触㈣的速 率。 在另-較佳實施例中之收集裝置是以上定義的氧化邦㈣ 丸片’而氧化軌片中可包含額外敝份，較佳包含氧化銘、銅 及/或氧化納。«外地’根據發現，此種丸將有效地用於轉化 與收集沉積製程排放廢氣中的副產物，較佳狀氧化辞化學氣相 了積製程產生的物。因此，使用本發明之祕裝置，可以減 ^或避免金屬或氧錄職物在真空處理系錄線及真线内的 累積。 以下娜氧化雜未反域理鐘的交互個。氧化絲面 ，先^收水份餅低水分解錢氧根⑽)錢根酌所需的能 量’如此可使反絲稍細快。缝根_缝錄表面結合， 11 201016294 其功能有如—活性中心，讓二乙基鋅(DEZ)(反應機理中的步驟4) 起反應由於氫氧根局部出現在氧化石夕丸片表面，且鍵具有 極強的鍵合力，所以鋅繼續與氧化絲面結合。 乙烧(C2H6)。 肀 根據本發明使用氧切丸#料收絲置⑽轉化與捕獲反 物時、’必然會利用高溫，且其使用的丸片結構於丸片表面 、逐漸增加時’只對氣體產生最小的流阻。同時，此等丸片 =二有的大孔隙量足以容崎或氧化鋅崎物。由於此種反應具 立在表φ上雜質’所以多孔的_狀或餘材料當然也可 用作此種丸片。 ^本發明更—實施财’設置收絲置_使餘保持在最 署淋:對於專技人士而言’收集裝置的位置朝向顯然:視收集裝 =使用的幾何形狀喊。對於既定幾何形狀的收集裝置，專技 人士可輕易決定其最佳位置朝向。 隼裝ίΐΓ 一特定實施例中，收集装置係可更換的，亦即，收 ;τ \⑥體的—部份。此種設計的優點是，#收集裝置飽和 二二地打及/或更換收集裝置。因此，可以減少維 譬如機械性的壓縮’所以不再需要費時的清潔 2在各較佳實施例中，收集裝置係容置或設置於一承架内。 =地放收集裝置之用。更佳的是，此一承架可 並允合職集裝置 了為-承盤或-支承籠。在更—較佳實關中此承架具有一或 12 201016294 多個開孔。在更一較佳實施例中，此承架為一支承籠，而且作為 進氣口的開口與作為出氣口的開口係彼此反向地安排。此外，該 等開孔之直徑小於所用的丸片的直經。適合製造此承架的材料較 佳的是可耐受大於或等於攝氏5〇度且小於或等於攝氏45〇度的溫 度。較佳的是’此承架稍受化學處理，例如耐受使㈣酸的處 理。最佳的是，此承架係以金屬製成’例如心在另—較佳實施 例中’此承架之直徑與殼體之内徑幾乎完全相同，因此承架插入 殼體時，並無太多空間留在承架與殼體内表面之間。 ❹ 若是承盤時’可實現為―鱗，於底端崎置多數開孔，其 直徑小於所用的丸片之直徑。較佳的是，此種承盤係以銘製成。、 若是支承巍時’可用金屬絲網製成，網目開孔之直徑則小於所用 的丸片之直徑。 在更-實施例中’紐裝置中有—種以上的㈣裝置。較佳 的是使用大於或等於2或大於或等於3種的收集裝置。在一較佳 實施射，這些收集裝置為不同材料及/或不同幾何形狀的丸片。 如此有利於產生不同程度的反制產物處理效率。在較佳實施例 ©中’可將不同的丸片(不同材料及/或不同幾何形狀）混合放置於至 少個承架内，及/或分別放置於至少二個承架内。 在-較佳實施例中，該殼體内堆叠有多個承盤；承盤之數量 為大於或等於2，更佳的是大於或等於3。更加理想時，是使用多 數間隔塊來達成此等承盤之堆疊。其優點在於單—承盤可將二種 (較佳為二種不同的)收集裝置彼此分開。 裝詈在例該峨置額外包含至少-個量測溫度的 =，兀件或熱敏電阻’並且最好設於熱贿置内的不 同點。”優點在於可監看_裝置内部的溫度狀況並使之保持在 13 201016294 所需的溫度範圍。較佳的是’此溫度量測裝置的設置可量測殼體 内部或殼體外表面的溫度。更佳的是，此溫度量測裝置的設置可 量測收集裝置及/或承架的溫度。更加理想時，此溫度量測裝置可 用於控制至少該等加熱裝置之一。 本發明另一層面係有關一真空處理系統，其包含至少一個處 理模組，此處理模組接設至少一個抽氣裝置與至少一個如本發明 提供之熱牌裝置，其中，熱阱裝置係設於抽氣裝置的上游。 在一實施例中，該真空處理系統為一直列式(inline)真空處理 系統。在另一實施例中，該真空處理系統或其處理模組係用於氣 相沉積。在更一實施例中’前述氣相沉積係選自包含物理氣相沉 積(PVD)、化學氣相沉積(cvd)、低壓化學氣相沉積(LPCVD)或電 漿輔助化學氣相沉積(PECVD)之群組。較佳的是，該氣相沉積為 LPCVD或PECVD。在其他較佳實施例中，該氣相沉積為矽、氧 化矽或金屬氧化物之沉積；更佳的是氧化鋅(2：11〇)或銦錫氧化物 (ITO)之沉積。最佳的是，該氣相沉積為氧化鋅之低壓化學氣相沉 積（ZnO-LPCVD)或氧化鋅之電漿辅助化學氣相沉積 (ZnO-PECVD)。在其他較佳實施例中，該氣相沉積係用於生產各 種薄膜，較佳的是各種薄膜電晶體(TFTs)或透明導電氧化物層 (TCO layers)。 在本發明其他實施例中，該抽氣裝置可為排氣泵、真空泵、 前級真空泵、轉葉泵(rotary vane pump)、魯氏泵(機械增壓泵，R〇〇ts pump)、南度真空泵、油擴散泵、低溫系(cryopump)、或渦輪分子 泵(^111)〇111(^〇11批01111屯）。在一較佳實施例中，該抽氣裝置為一高 度真空泵’更佳為一渦輪分子泵’其可產生小於或等於紐& 的壓力。 201016294 本發明真空處理系統之處理模組、抽氣裝置及熱牌裝置必須 連接，較佳成直列連接。其中，熱阱裝置係設於真空處理系 上游與處理模組之下游。“上游”與“下游，，係指稱從處理模組抽出的 處理亂體的流向。換言之，熱牌裝置係設於處理模組與抽氣裝置 之間，而處理模組内使用的處理氣體是被抽氣裝置從處理模組抽 出的。其中，該處理氣體首先流過本發明之熱阱裝置，以便去除 反應副產物。 本發明之真空處理系統中，各組件可藉專技人士已知的任何 ❹適^方式加以銜接’以允許從處理模組抽出處理氣體，並引導處 理氣體通過熱阱裝置，最後抵達該抽氣裝置。較佳的是，真空處 理系統的各組件係用導管、通氣管路及/或支管銜接。 在一實施例中，係使用單一抽氣裝置抽空一或多個、二或多 個、或三或多個處理模組。亦即，所有處理模組都連接到一或多 個熱阱裝置上方的單一抽氣裝置。在另一實施例中，係使用二或 多個抽氣裴置抽空一或多個、二或多個、或三或多個處理模組。 亦即，每一單一處理模組可用一或多個抽氣裝置抽空，且/或二或 參 多個處理模組可用一或多個抽氣裝置抽空。 本發明真空處理系統中，各組件間的銜接可進而包含多個閥 件。使用閥件的優點在於可將中空處理系統的各組件彼此分隔。 如此允許一或多個被分隔的裝置内部壓力上升而不影響真空處理 系統的其餘部份。在另一實施例中，該(等)熱阱裝置係利用閥件而 與處理模組分隔。較佳的是，每一熱阱裝置使用二或多個閥件分 隔。在一較佳實施例中，熱阱裝置的上游置有一或多個閥件，且 其下游亦置有一或多個閥件。因此，熱阱裝置上游的至少一個閥 件分隔熱阱裝置與處理模組，而熱阱裝置下游的至少一個閥件則 15 201016294 分隔熱阱裝置與抽氣裝置。 在更-實施例巾，綱件係額外再接設_閥件，最好是較小 的閥件，以利於預留真空處理系統之軟到s〇ftpump)。 在另-特定實施例中’本發明之真空處理系統進而包含至少 -個系統壓力量測裝置’較佳為一壓力傳感器㈣咖 transd·) ° m壓力置可設在真空處理系統内部任 適合的位置。 在另-特定實施例中’本發明之真空處理系統進而包含至少 -通氣管路’以便對經_件_後的_裝置通氣至大氣壓力 範圍。在-較佳實施财，是錢—惰性氣體，例如氮邮2)，進 行通氣。 在另-特定實施射，該真空處理系統進而包含至少一通氣 管路’以便藉由插入-氣鎮(gaSballast)而對抽氣裝置通氣。因此， 利用此-通氣管路，可㈣減裝置内部_力，*且可以小心 處理因鎌裝置内部沉積造成的流導變化(沉積會縮減通氣管路的 通暢戴面）。在-雛實補巾，職_ —條賴，例如氮氣 (N2)。 根據-直列式真空處理纽的較佳實施例，其巾根據本發明 之熱阱裝置可使用由Oerlikon Solar公司出售的TC〇 12GG Lpcv〇 bL積系統。 在另-較佳實施例中，本發明之真空處理系統包含二或多個 ，本發明提供之熱贿置，其中至少有二個紐裝置為並聯，因 1:至少二個支管内。換言之，該等至少二個並聯的熱解裝置 係位於不同的支管内，#第—歸裝置維修時，可 置接管第-熱賊置的祕’使真空處㈣統可輯持運作、。以 16 201016294 此種並聯方式設置熱㈣，其伽在於鱗真线理純不 了維修’增加抽氣裝置的使用壽命， 本改進整體生產祕的猶時_縣_(轉絲h f 由於並聯的熱阱裝置體積相當小，所以尸 可完成從真空處理系統第一支管到第二支管的切換。進行此2 換所需的_最好短於系_輸送咖。因此，在本發明 實施例中，可以執行切換而不會岔斷真空處理系統的處理(較 是一沉積處理）。 參 ❹ 在-更佳實施例中，該真空處理系統中的每一第一敎胖裝 置’都有-對應的第二歸裝置與該第—歸裝置並聯。在 加理想的實施例中，前述-或多個或每—個處理模組係接設一或 多對並聯的鋪裝置。在另—更加理想的實施例中，是由一或多 7 CVD處理模組接設一或多對並聯的熱牌裝置。最佳的是，此 (等)CVD處理模組為氧化鋅之低壓化學氣相沉積(Zn〇_Lpc㈣模 組或氧化辞之電麵助化學氣她^(ZnQ_pECVD)模組。 在另-較佳實施例中，本發明之真空處理系統包含兩個以上 的支管，每-支管設-齡裝置。因此，有兩個以上的贿裝置 以轉筒模式之設計彼此連接，如此可以改進使用/維修時間比 (use-tomaintenanceratio)。其優點在於，可利用例如壓力傳感器來 应測系統各通氣管路中的壓力，以實現自動化故障安全保護操作 _mated fail-safe 叩eration);同時，利用一控制環路(c〇_ ，可允許不同支管間的自動化切換。若有二個以上的支管時，若 -熱牌裝置在其預_使用年關達前發生故障，纽將可以再 動作二此外’若紐裝置具有自動化自我清潔周期，則可在隔離 後執打自我清潔周期’而位於不同支管内的熱牌裝置仍可繼續操 17 201016294 作。因此’真空處理系統具有二或多個支管，且每一支管包含至 少-個熱解裝置時，可利於結合高可用性與低維修、低停用時間 等優點。 、本發明另-層面有關-種真空處理系_反應副產物之去除 方法，其中係使包含反應副產物之處理氣體強制通過至少一個如 本發明提供之熱阱裝置。 在-較佳實施财，該紐裝置係包含在根據本發明之 處理系統中。 在另一較佳實施例中，該熱阱裝置係加熱到大於或等於 200度但小於或等於攝氏45〇度的溫度。 、 ❹ 在另-較佳實施例中，該真空處理系統包含至少二個並聯的 熱胖裝置，並可連續運作，亦即，該系統不會為了維修而停機。 【實施方式】 、藉由參照以下所述各實施例之詳細說明，將可理解本 述及其他各層面。 圖1顯不根據本發明一較佳實施例之熱阱裝置i。熱阱裝置1 圓管狀殼體2，殼體2上包含一進氣口 3及一出氣口 5。進❹ 氣口 3 第—管件4而與一氧化鋅之低壓化學氣相沉積 (ZnO-LPCVD)處理模組連接，而出氣口 5彻—第二管件6盘一 渴輪分子真空泵連接。 ^ 此外，熱阱裝置1包含一加熱裝置7,其為一内部加熱裴置7， 實施時可為設在殼體2中心並大約延伸殼體2全長之一電熱棒S。 ，熱牌襄置1進而包含四個承架1〇，實施時可為利用多數間隔 塊形成堆4放置的承盤n。實鱗，此等承盤U可為具有圓形橫 18 201016294 截面並以鋁製成的淺缽。承盤11安裝時’係與殼體2之内壁齊平。 承盤11上包含多數允許氣體流通的開孔’但開孔直徑小於收集裝 置13的直徑。此外，承盤11係直接熱接觸加熱棒8。 、 熱阱裝置1進而包含二個可關閉開孔16，其位置朝向彼此相 反。實施時，位於底端的可關閉開口 17為一無孔凸緣l7(Wind flange)，而位於頂端的可關閉開口 18為一與加熱棒連接的無孔凸 緣。 熱阱裝置1進而包含兩種類型呈丸片形13的收集裝置，容置 〇在二個分開的承盤11内。第一類型14之幾何形狀為擠製圓筒， 第二類型15則具有五環式(pentaring)的幾何形狀。成五環式幾何 形狀15的丸片，其直徑為19公厘，長度為9·5公厘。兩種類型的 收集裝置13都以作為催化劑的材料製成，用以轉化反應副產物。 收集裝置13是用陶瓷材料製成，其成份中包含重量百分比大於或 等於65且小於或等於70的氧化石夕及重量百分比大於或等於23且 小於或等於28的氧化鋁。此種收集裝置13可以從譬如Saint Gobain Norpo公司購得。由於收集裝置13是直接與承盤n熱接 參觸，而承盤11是直接與加熱棒8熱接觸，因此收集裝置13是間 接與加熱棒8熱接觸。 於真空處理系統操作期間，熱胖裝置1是利用加熱棒8從内 邛加熱到大約攝氏450度的溫度。熱牌裝置1内不同點位置的溫 度都加以量測，以確定熱阱裝置1的内部溫度狀況上升到所需的 範圍。 當真空泵永續操作時，會從氧化鋅的低壓化學氣相沉積處理 模組抽出處理氣體，並將處理氣體吸至真空泵。由於熱阱裝置i 设在氧化鋅的低壓化學氣相沉積處理模組與真空泵之間，所以處 19 201016294 理氣體會被_流過祕裝置丨(如箭頭所示)及分別位於承盤與 11收集裝置13上的開孔。 ' 虽收集裝置13飽和後，即停止真空處理系統的操作並打開頂 端18，以便卸除承盤η及設於承盤u上的丸片13。之後，可用 礦酸清潔/沖洗熱解裝置1的殼體2，以去除沉積產物，再將底端 的可關閉開孔17開啟，將礦酸排乾。 圖2顯示根據本發明另一較佳實施例之熱阱裝置丨。在此實施 例中’熱阱裝置1包含一圓管狀殼體2,殼體2上包含一進氣口3 及一出氣口 5。實施時，殼體2可設為處理模組與真空泵間銜接管 的加寬部份。因此’進氣口 3是利用—第—管件4而與氧化辞之 低壓化學氣相沉積(ZnO-LPCVD)處理模組連接，而出氣口 5利用 一第二管件6與一渦輪分子真空泵連接。 此外’熱牌裝置1包含二個加熱裝置7。其中之一為内部加熱 裝置7’實施時可為設在殼體2中心並大約延伸殼體2全長之一電 熱棒8。另一個則為外部加熱裝i 9。外部加熱裝置7大約延伸殼 艘2全長’亦即’從接近殼體2獅處延伸至接近殼體2底端處。 實施時’外部加熱裝置7可為-加熱套9,而殼體2則為隔熱的， 以免損失能量。 熱阱裝置1進而包含一承架10，實施時，承架1〇可為一金屬 絲網製成蚊承籠I2。支承籠12安料，倾難2軸壁齊平。 金屬絲網内的網孔直徑小於收集裝置丨的直徑。此外，支承籠Ο 直接與加熱棒8熱接觸。 熱胖裝置進而包含-可關閉的開孔16，位於殼體2的底端。 熱牌裝置1進而包含呈丸片形13的收集裝置13，容置在該支 承籠12内。收集裝置12 *有五環式15幾何形狀，且其直徑與長 201016294 二與i2·5公厘。收集裝置13是以作為催化劑的材 化反細產物。收錄置13是用喊材料製成， _分比大於或等於65且小於或_ %的氧化 分咖恤23料w於28魏脑。此種 收集裝置13可以從譬如Saint G〇bain Ν〇φ〇公司購得。由於收集 裝置13是直接與支承籠12熱簡，而支承籠12是直接與加熱棒 8熱接觸’因此收集裝置13是間接與加鮮8熱接觸。Zn(C2H5)2+.〇H»> Zn(〇H)C2H5+.C2H5 Zn(OH)C2H5+-〇H->Zn(〇H)2+*C2H5 •OH +.C2H5+ C2H5〇H 2. C2H5; C4H10 In the mechanism proposed above, the rate-limiting reaction is caused by water decomposition to form a radical (step 3). Higher energy (ie higher temperature) causes a reaction of the touch and also affects the rate at which diethyl zinc (DEZ) decomposes into ethyl zinc radicals (e%1*t(4). The collection device in the example is the above-defined oxidation state (four) pellets' and the oxidation rails may contain additional components, preferably containing oxidation, copper and/or sodium oxide. «External' is found to be effective It is used for the conversion and collection of by-products in the exhaust gas of the deposition process, preferably in the form of a chemical vapor phase accumulated process. Therefore, the use of the secret device of the present invention can reduce or avoid metal or oxygen recordings. Accumulation in the vacuum processing line and the true line. The following interactions of the oxidized impurities are not reversed. The oxidized silk surface, firstly, the water cake is low-water-decomposed, and the oxygen is dissolved (10). The energy 'so that the reverse wire is slightly finer. Sewing root_sewing surface bonding, 11 201016294 Its function is like - active center, letting diethyl zinc (DEZ) (step 4 in the reaction mechanism) react because the hydroxide is locally present on the surface of the oxidized stone tablets, and The bond has a very strong bonding force, so the zinc continues to bond with the oxidized silk surface. Ethylene (C2H6).肀In accordance with the present invention, when the oxygen cut pellets (10) are used for the conversion and capture of the anti-objects, 'the high temperature is inevitably utilized, and the pellet structure used is gradually increased on the surface of the pellets', and only a minimum flow resistance is generated to the gas. . At the same time, these pellets = two large pores are enough to accommodate the saki or zinc oxide. Since such a reaction has an impurity on the surface φ, a porous _ shape or a residual material can of course be used as such a pellet. ^ The invention is more - the implementation of the financial setting of the wire collection _ to keep the remaining in the shower: for the skilled person, the position of the collection device is clearly: depending on the collection = use geometry to shout. For a collection device of a given geometry, the skilled person can easily determine the orientation of the best position.隼装ΐΓ In a particular embodiment, the collection device is replaceable, i.e., the portion of the body. The advantage of this design is that the # collection device is saturated and/or the collection device is replaced. Therefore, it is possible to reduce the mechanical compression, so that no time-consuming cleaning is required. 2 In the preferred embodiment, the collecting device is housed or disposed in a rack. = Ground collection device. More preferably, the shelf can be used as a carrier or a support cage. In a more preferred case, the rack has one or 12 201016294 multiple openings. In a further preferred embodiment, the carrier is a support cage, and the opening as the air inlet and the opening as the air outlet are arranged opposite each other. Moreover, the diameter of the openings is smaller than the straightness of the pellets used. Preferably, the material suitable for making the carrier is a temperature that is resistant to greater than or equal to 5 degrees Celsius and less than or equal to 45 degrees Celsius. Preferably, the carrier is slightly chemically treated, e.g., resistant to the treatment of the acid. Most preferably, the carrier is made of metal 'for example, in the preferred embodiment', the diameter of the carrier is almost identical to the inner diameter of the housing, so that the carrier is not inserted into the housing. Too much space remains between the carrier and the inner surface of the housing. ❹ If it is a platter, it can be realized as a scaly. Most openings are formed at the bottom end, and the diameter is smaller than the diameter of the pellets used. Preferably, such a tray is made of the name. If it is supported by 巍, it can be made of wire mesh, and the diameter of the mesh opening is smaller than the diameter of the pellet used. In a more embodiment, there are more than one (four) devices in the 'New Zealand device. It is preferred to use a collecting device of greater than or equal to 2 or greater than or equal to three. In a preferred embodiment, the collection devices are pellets of different materials and/or different geometries. This is advantageous in producing different levels of counter product processing efficiency. In the preferred embodiment, the different pellets (different materials and/or different geometries) may be mixed in at least one of the racks and/or placed in at least two of the racks, respectively. In a preferred embodiment, a plurality of retainers are stacked within the housing; the number of retainers is greater than or equal to two, and more preferably greater than or equal to three. More ideally, multiple spacer blocks are used to achieve the stacking of such orders. This has the advantage that the single-reel can separate two (preferably two different) collection devices from each other. In the case of the device, the device additionally contains at least one measuring temperature =, a component or a thermistor' and is preferably located at a different point in the hot bribe. "The advantage is that the temperature inside the device can be monitored and maintained at the temperature range required by 13 201016294. Preferably, the setting of this temperature measuring device measures the temperature inside the housing or the outer surface of the housing. More preferably, the temperature measuring device is arranged to measure the temperature of the collecting device and/or the rack. More preferably, the temperature measuring device can be used to control at least one of the heating devices. A vacuum processing system comprising at least one processing module, the processing module being coupled to at least one air extracting device and at least one hot card device as provided by the present invention, wherein the hot trap device is disposed in the air extracting device In one embodiment, the vacuum processing system is an inline vacuum processing system. In another embodiment, the vacuum processing system or its processing module is used for vapor deposition. In the example, the aforementioned vapor deposition is selected from the group consisting of physical vapor deposition (PVD), chemical vapor deposition (cvd), low pressure chemical vapor deposition (LPCVD) or plasma assisted chemical vapor deposition (PECVD). Preferably, the vapor deposition is LPCVD or PECVD. In other preferred embodiments, the vapor deposition is deposition of tantalum, yttria or metal oxide; more preferably zinc oxide (2:11 〇) or Deposition of indium tin oxide (ITO). Preferably, the vapor deposition is low pressure chemical vapor deposition (ZnO-LPCVD) of zinc oxide or plasma assisted chemical vapor deposition (ZnO-PECVD) of zinc oxide. In other preferred embodiments, the vapor deposition is used to produce various films, preferably various thin film transistors (TFTs) or transparent conductive oxide layers (TCO layers). In other embodiments of the invention, The air suction device can be an exhaust pump, a vacuum pump, a pre-stage vacuum pump, a rotary vane pump, a Roche pump (a mechanical booster pump, a R〇〇ts pump), a south vacuum pump, an oil diffusion pump, and a low temperature system. (cryopump), or turbomolecular pump (^111) 〇 111 (^ 11 batch 01111 屯). In a preferred embodiment, the venting device is a high vacuum pump 'more preferably a turbo molecular pump' Producing a pressure less than or equal to Newton& 201016294 The processing module of the vacuum processing system of the present invention, pumping The device and the hot plate device must be connected, preferably in an in-line connection, wherein the hot trap device is disposed upstream of the vacuum processing system and downstream of the processing module. "Upstream" and "downstream" refer to the process of withdrawing from the processing module. The flow of chaos. In other words, the hot card device is disposed between the processing module and the air extracting device, and the processing gas used in the processing module is extracted from the processing module by the air extracting device. Here, the process gas first flows through the hot trap device of the present invention to remove reaction by-products. In the vacuum processing system of the present invention, the components can be coupled by any means known to those skilled in the art to allow the process gas to be withdrawn from the process module and to direct the process gas through the heat sink device and finally to the pump. Device. Preferably, the components of the vacuum processing system are coupled by conduits, vent lines, and/or manifolds. In one embodiment, one or more, two or more, or three or more processing modules are evacuated using a single air extraction device. That is, all of the processing modules are connected to a single extraction device above one or more of the hot-trap devices. In another embodiment, one or more, two or more, or three or more processing modules are evacuated using two or more pumping devices. That is, each single processing module can be evacuated with one or more air extraction devices, and/or two or more of the plurality of processing modules can be evacuated with one or more air extraction devices. In the vacuum processing system of the present invention, the interface between the components can in turn comprise a plurality of valve members. The advantage of using a valve member is that the components of the hollow processing system can be separated from one another. This allows the internal pressure of one or more of the separated devices to rise without affecting the remainder of the vacuum processing system. In another embodiment, the (iso) heat sink device is separated from the processing module by a valve member. Preferably, each heat sink device is separated by two or more valve members. In a preferred embodiment, one or more valve members are disposed upstream of the hot-trap device and one or more valve members are disposed downstream thereof. Therefore, at least one valve upstream of the hot-trap device separates the heat sink device from the process module, and at least one valve member downstream of the heat sink device is divided into a heat sink device and a gas pump. In the more embodiment of the invention, the assembly is additionally provided with a valve member, preferably a smaller valve member, to facilitate the softening of the vacuum processing system to the s〇 ftpump. In another embodiment, the vacuum processing system of the present invention further comprises at least one system pressure measuring device, preferably a pressure sensor (four) coffee transd.). The pressure can be set within the vacuum processing system. position. In another particular embodiment, the vacuum processing system of the present invention further includes at least a venting line </ RTI> to vent the _ _ _ device to a range of atmospheric pressures. In the preferred embodiment, it is a money-inert gas, such as nitrogen mail 2, for aeration. In another specific implementation, the vacuum processing system further includes at least one venting line </ RTI> to ventilate the venting device by inserting a gas galvanic (gaSballast). Therefore, by using this-ventilation line, the internal force of the device can be reduced (4) and the conductance changes caused by the internal deposition of the device can be carefully handled (the deposition will reduce the smooth surface of the vent line). In the - sturdy towel, job _ - strip, such as nitrogen (N2). According to a preferred embodiment of the in-line vacuum processing unit, the TC 〇 12GG Lpcv〇 bL product system sold by Oerlikon Solar is used in the heat sink apparatus according to the present invention. In another preferred embodiment, the vacuum processing system of the present invention comprises two or more, and the present invention provides a hot bribe in which at least two of the new devices are connected in parallel, as in 1: at least two of the branches. In other words, the at least two parallel pyrolysis devices are located in different branch pipes, and the #第一-home device can be set to take over the secret of the first hot thief to make the vacuum (4) system work. Take 16 201016294 this parallel way to set the heat (four), its gamma lies in the scale of the line can not be pure maintenance 'increasing the service life of the pumping device, the improvement of the overall production secrets of the time _ county _ (transfer hf due to parallel heat sink The device is relatively small in size, so that the corpse can complete the switching from the first branch to the second branch of the vacuum processing system. The _ required to perform the 2 change is preferably shorter than the _ delivery coffee. Therefore, in the embodiment of the present invention, The switching is performed without interrupting the processing of the vacuum processing system (as compared to a deposition process). In a preferred embodiment, each of the first fat devices in the vacuum processing system has a corresponding The second returning device is connected in parallel with the first returning device. In the preferred embodiment, the aforementioned one or more or each processing module is connected to one or more pairs of parallel paving devices. In another, more ideal implementation In one example, one or more pairs of parallel hotplate devices are connected by one or more 7 CVD processing modules. Preferably, the (etc.) CVD processing module is a low pressure chemical vapor deposition of zinc oxide (Zn〇). _Lpc (four) module or oxidation of the electric surface to help the chemical gas her ^ (ZnQ_p ECVD) module. In another preferred embodiment, the vacuum processing system of the present invention comprises more than two branch pipes, each of which is provided with an ageing device. Therefore, there are more than two bribe devices in a drum mode design. Connecting to each other, this can improve the use-to-maintenance ratio. The advantage is that pressure sensors can be used to measure the pressure in each vent line of the system to achieve automatic fail-safe operation _mated fail-safe叩eration); At the same time, a control loop (c〇_ can be used to allow automatic switching between different branches. If there are more than two branches, if the hot card device fails before its pre-usage, New Zealand will be able to move again. In addition, 'If the New Zealand device has an automated self-cleaning cycle, it can be used to perform a self-cleaning cycle after isolation' and the hot card device located in different branches can continue to operate 17 201016294. Therefore, the vacuum processing system When there are two or more branch pipes, and each pipe contains at least one pyrolysis device, it can combine the advantages of high availability and low maintenance, low downtime, and the like. The invention further relates to a method for removing a reaction by-product, wherein a process gas containing a reaction by-product is forced through at least one heat sink device as provided by the present invention. The apparatus is included in a processing system in accordance with the present invention. In another preferred embodiment, the heat sink apparatus is heated to a temperature greater than or equal to 200 degrees but less than or equal to 45 degrees Celsius. In a preferred embodiment, the vacuum processing system includes at least two parallel hot fat devices and can operate continuously, that is, the system does not stop for maintenance. [Embodiment] By referring to the following embodiments The detailed description will be able to understand the present and other aspects. Figure 1 shows a heat sink device i in accordance with a preferred embodiment of the present invention. The heat sink device 1 has a circular tubular casing 2, and the casing 2 includes an air inlet 3 and an air outlet 5. The inlet port 3 is connected to the zinc oxide low-pressure chemical vapor deposition (ZnO-LPCVD) processing module, and the outlet port is 5 - the second tube 6 disk is connected to a thirst wheel molecular vacuum pump. In addition, the heat sink device 1 includes a heating device 7, which is an internal heating device 7, which may be implemented as an electric heating rod S disposed at the center of the housing 2 and extending approximately the entire length of the housing 2. The hot card set 1 further comprises four racks 1 , which can be implemented to form the retainer n placed by the stack 4 using a plurality of spacer blocks. Real scales, such decks U may be shallow rafts having a circular cross section 18 201016294 and made of aluminum. When the retainer 11 is mounted, it is flush with the inner wall of the casing 2. The retainer 11 contains a plurality of openings 'allowing gas flow' but the opening diameter is smaller than the diameter of the collecting device 13. In addition, the retainer 11 is in direct thermal contact with the heating rod 8. The hot trap device 1 further comprises two closable openings 16 which are positioned opposite each other. In practice, the closable opening 17 at the bottom end is a non-perforated flange 17 and the closable opening 18 at the top end is a non-porous flange that is coupled to the heating rod. The heat sink device 1 further comprises two types of collecting devices in the form of pellets 13, which are housed in two separate retainers 11. The first type 14 geometry is an extruded cylinder and the second type 15 has a pentaring geometry. The pellet of the five-ring geometry 15 has a diameter of 19 mm and a length of 9.5 mm. Both types of collecting means 13 are made of a material as a catalyst for converting reaction by-products. The collecting means 13 is made of a ceramic material containing, in its composition, an oxide having a weight percentage of greater than or equal to 65 and less than or equal to 70 and an alumina having a weight percentage of greater than or equal to 23 and less than or equal to 28. Such a collection device 13 is commercially available, for example, from Saint Gobain Norpo. Since the collecting device 13 is in direct thermal contact with the retainer n and the retainer 11 is in direct thermal contact with the heating rod 8, the collecting device 13 is in thermal contact with the heating rod 8 indirectly. During operation of the vacuum processing system, the hot fat device 1 is heated from the inner crucible to a temperature of about 450 degrees Celsius using the heating rod 8. The temperatures at different points in the hot plate device 1 are measured to determine that the internal temperature condition of the hot trap device 1 has risen to the desired range. When the vacuum pump is operated continuously, the processing gas is withdrawn from the low pressure chemical vapor deposition processing module of zinc oxide, and the processing gas is sucked to the vacuum pump. Since the hot trap device i is located between the low-pressure chemical vapor deposition processing module of zinc oxide and the vacuum pump, the gas will be _flowed through the secret device (as indicated by the arrow) and located in the bearing plate and 11 respectively. An opening in the device 13. After the collection device 13 is saturated, the operation of the vacuum processing system is stopped and the top end 18 is opened to remove the retainer η and the pellets 13 provided on the retainer u. Thereafter, the shell 2 of the pyrolysis apparatus 1 can be cleaned/rinsed with mineral acid to remove the deposited product, and the bottom closed opening 17 can be opened to drain the mineral acid. 2 shows a hot-trap device 根据 in accordance with another preferred embodiment of the present invention. In this embodiment, the heat sink device 1 includes a circular tubular casing 2, and the casing 2 includes an air inlet 3 and an air outlet 5. In practice, the housing 2 can be configured as a widened portion of the adapter between the processing module and the vacuum pump. Therefore, the air inlet 3 is connected to the oxidized low pressure chemical vapor deposition (ZnO-LPCVD) processing module by means of the -tube member 4, and the air outlet 5 is connected to a turbo molecular vacuum pump by a second tube member 6. Further, the 'hot card device 1' includes two heating devices 7. One of them is that the internal heating device 7' can be implemented as one of the heater bars 8 disposed at the center of the casing 2 and extending approximately the entire length of the casing 2. The other is external heating i 9 . The external heating means 7 extends approximately the full length 'i.e.' of the casing 2, extending from near the lion of the casing 2 to near the bottom end of the casing 2. When implemented, the external heating device 7 can be a heating jacket 9, while the housing 2 is insulated to avoid loss of energy. The heat sink device 1 further includes a carrier 10 which, when implemented, can be a metal mesh made of a mosquito cage I2. The support cage 12 is placed in the same material, and the two axial walls are flush. The mesh diameter in the wire mesh is smaller than the diameter of the collecting device. In addition, the support cage is in direct thermal contact with the heating rod 8. The hot fat device further comprises a closable opening 16 at the bottom end of the housing 2. The hot card device 1 further comprises a collecting device 13 in the form of a pellet 13 housed in the support cage 12. The collection device 12 * has a five-ring 15 geometry and has a diameter and length of 201016294 2 and i 2 · 5 mm. The collecting device 13 is a materialized anti-fine product as a catalyst. The inclusion 13 is made of shouting material, and the _ fraction is greater than or equal to 65 and less than or _% of the oxidized t-shirt 23 material w 28 Wei Wei. Such a collection device 13 is commercially available, for example, from Saint G〇bain Ν〇φ〇. Since the collecting device 13 is directly cooled with the support cage 12, and the support cage 12 is in direct thermal contact with the heating rod 8, the collecting device 13 is indirectly in thermal contact with the freshening 8.
於真空處理纽操作綱’鋪裝置丨是彻加熱棒8及加 熱套9從内部加熱到大約攝氏45〇度的溫度。熱解裝置丨内不同 點位置的溫度都加以量測，以確定歸裝置部溫度狀況上 升到所需的範圍。 當真空泵永續操作時，會從氧化鋅的低壓化學氣相沉積處理 模組抽出處理氣體，並將處理氣體吸至真空泵。由於熱阱裝置1 設在氧化鋅的低壓化學氣相沉積處理模組與真空泵之間，所以處 理氣體會被強制流過熱阱裝置1(如箭頭所示)及分別位於支承籠 12與收集裝置13上的開孔。 圖3顯示收集裝置較佳的幾何形狀實施例。其中圖3A顯示一 五環式結構，圖3B則顯示一蜂巢式結構。兩種幾何形狀都可提供 良好的表面/流阻比(ratio between surface and flow resistance。 圖4顯示根據本發明一較佳實施例之真空處理系統31，其中 包含一處理模組(PM)19經由支管20、21及閥件22-27而與渦輪分 子真空泵28銜接。此外’並包含二個並聯的如本發明提供的第一 及第二熱阱裝置1(HT1 &HT2)。每一支管有二個主閥。第一支管 20有二個主閥22、24，第二支管21有二個主閥23、25。主閥的 用途是分別在兩侧上分隔熱阱裝置與處理模組及分隔熱阱裝置與 21 201016294 真空泵28。在真空泵28侧的主閥24、25另有較小的附加閥26、 27，以容許預留系統的軟泵。 此外，真空處理系統31中並使用壓力傳感器監測系統 壓力。同時，每一支管上有一通氣管路29、30。當兩熱阱裝置分 別被閥件22、24及23、25隔離時，可經由通氣管路對熱阱裝置 通入氮氣(N2)，以使熱解裝置達到大氣壓力的範圍。此外並使用另 一通氣管路30藉由添加氮氣來控制真空泵28管線内的壓力。 上述系統的操作方法包含：開啟閥件22、24以使處理模組19 及通氣管路29、3G(包含與其接設的設備)_ ^件23、^及^ 則保持_，以達成整個泵裝置的流導控φ卜進行沉積處理時， 使用熱贿置ΗΤ1收集流出的處理氣體，如上所述。 管内内’由於關閉閥件23、25及27而使位於第二支 保持隔離時，可崎鱗裝置_進行維 操作狀離，^ /、女裝可以再讓這些閥件回到 操作狀態’包含降壓工序、烘乾及/或冷卻程序等。 熱牌裝置ΗΤ1—飽和並需要維^ ❹ 並關閉隔_ 22、24、26，進^可^啟隔賴23、25 支管2〇的熱牌裝置被隔離 ^一支管2卜此時，第- 於運轉系統。 進仃維修，而第二支管21則用 22 201016294 【圖式簡單說明】 圖1顯示根據本發明一較佳實施例之熱阱裝置； 圖2顯示根據本發明另一較佳實施例之熱阱裝置； 圖3顯示收集裝置幾何形狀的二個較佳實施例； 其中圖3A顯示一五環式結構，圖3B顯示一蜂巢式結構；以 及 圖4顯示根據本發明一較佳實施例之真空處理系統。 ❹ 【主要元件符號說明】 1 熱阱裝置； 2 殼體； 3 進氣口； 4 第一管件； 5 出氣口； 6 第二管件； 7 加熱裝置； 8 電熱棒， 9 外部加熱裝置(加熱套）； 10 承架； 11 承盤； 12 支承籠； 13 收集裝置（丸片）； 14 第一類型(擠製圓筒形）； 15 第二類型(五環形）； 16 可關閉開口； 23 201016294 17 底端可關閉開口(無孔凸緣）； 18 頂端可關閉開口； 19 處理模組(PM); 20,21 支管； 22-25 主閥； 26,27 附加閥； 28 渦輪分子真空泵； 28 壓力傳感器；In the vacuum processing, the operation of the unit is to heat the rod 8 and the heating sleeve 9 from the inside to a temperature of about 45 degrees Celsius. The temperature at different points in the pyrolysis unit is measured to determine that the temperature of the unit is raised to the desired range. When the vacuum pump is operated continuously, the processing gas is withdrawn from the low pressure chemical vapor deposition processing module of zinc oxide, and the processing gas is sucked to the vacuum pump. Since the hot trap device 1 is disposed between the low pressure chemical vapor deposition processing module of zinc oxide and the vacuum pump, the processing gas is forced to flow through the superheat trap device 1 (as indicated by the arrow) and located in the support cage 12 and the collecting device 13, respectively. The opening on the hole. Figure 3 shows a preferred geometry embodiment of the collection device. 3A shows a five-ring structure, and FIG. 3B shows a honeycomb structure. Both geometries provide a good ratio of surface and flow resistance. Figure 4 shows a vacuum processing system 31 in accordance with a preferred embodiment of the present invention, including a processing module (PM) 19 via The branch pipes 20, 21 and the valve members 22-27 are coupled to the turbomolecular vacuum pump 28. In addition, 'and two parallel first and second heat sink devices 1 (HT1 & HT2) as provided by the present invention are connected in parallel. There are two main valves. The first branch 20 has two main valves 22, 24. The second branch 21 has two main valves 23, 25. The main valve is used to separate the hot trap device and the processing mold on both sides. Group and separate heat sink devices and 21 201016294 vacuum pump 28. The main valves 24, 25 on the side of the vacuum pump 28 have smaller additional valves 26, 27 to allow the soft pump of the system to be reserved. In addition, the vacuum processing system 31 The pressure sensor is used to monitor the system pressure. At the same time, each branch has a vent line 29, 30. When the two heat trap devices are separated by the valve members 22, 24 and 23, 25, respectively, the heat sink device can be connected via the vent line Passing nitrogen (N2) to bring the pyrolysis unit to atmospheric pressure In addition, another vent line 30 is used to control the pressure within the line of the vacuum pump 28 by the addition of nitrogen. The method of operation of the above system includes opening the valve members 22, 24 to operate the module 19 and the vent lines 29, 3G ( Included in the equipment connected thereto _ ^ parts 23, ^ and ^ then _, in order to achieve the flow control of the entire pump device φ, when the deposition process, use the hot bribe ΗΤ 1 to collect the effluent process gas, as described above. In the inside of the tube, when the second branch is kept isolated due to the closing of the valve members 23, 25 and 27, the scale device can be operated in a dimensional manner, and the women can return the valve member to the operating state. Depressurization process, drying and/or cooling procedures, etc. Hot card device ΗΤ1—saturated and requires dimension ^ and closes _ 22, 24, 26, and can be used to open the hot plate of 23, 25 pipe 2 隔The device is isolated ^ a tube 2 at this time, the first - operating system. The second branch 21 is used 22 201016294 [Simplified schematic] Figure 1 shows a heat sink according to a preferred embodiment of the present invention Apparatus; Figure 2 shows a heat sink in accordance with another preferred embodiment of the present invention Figure 3 shows two preferred embodiments of the geometry of the collection device; wherein Figure 3A shows a five-ring structure, Figure 3B shows a honeycomb structure; and Figure 4 shows a vacuum process in accordance with a preferred embodiment of the present invention. System ❹ [Main component symbol description] 1 hot trap device; 2 housing; 3 air inlet; 4 first pipe; 5 air outlet; 6 second pipe; 7 heating device; 8 electric heating rod, 9 external heating device ( Heating jacket); 10 bracket; 11 retaining disc; 12 support cage; 13 collecting device (pellet); 14 first type (extruded cylindrical); 15 second type (five ring); 16 can close the opening; 23 201016294 17 Bottom closed opening (non-porous flange); 18 top closed opening; 19 treatment module (PM); 20, 21 branch; 22-25 main valve; 26, 27 additional valve; 28 turbomolecular vacuum pump; Pressure Sensor;
29,30 通氣管路；以及 31 真空處理系統。 2429,30 vent line; and 31 vacuum processing system. twenty four