TW201015224A - Positive photosensitive resin composition - Google Patents

Positive photosensitive resin composition Download PDF

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TW201015224A
TW201015224A TW098108418A TW98108418A TW201015224A TW 201015224 A TW201015224 A TW 201015224A TW 098108418 A TW098108418 A TW 098108418A TW 98108418 A TW98108418 A TW 98108418A TW 201015224 A TW201015224 A TW 201015224A
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Taiwan
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resin composition
photosensitive resin
same
chemical formula
group
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TW098108418A
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TWI376574B (en
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Yong-Sik Yoo
Hyun-Yong Cho
Doo-Young Jung
Jong-Hwa Lee
Ji-Young Jeong
Min-Kook Chung
Kil-Sung Lee
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Cheil Ind Inc
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/02Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
    • C08F290/06Polymers provided for in subclass C08G
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L77/00Compositions of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Compositions of derivatives of such polymers
    • C08L77/06Polyamides derived from polyamines and polycarboxylic acids
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/0226Quinonediazides characterised by the non-macromolecular additives
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)

Abstract

The present invention relates to a positive photosensitive resin composition that includes (A) a polyamide polymer, (B) an esterified quinonediazide compound, (C) a phenol group-included compound, and (D) a solvent. The positive photosensitive resin composition has excellent heat resistance and is capable of providing high sensitivity and high-resolution fine patterns.

Description

201015224 六、發明說明:201015224 VI. Description of invention:

C發明戶斤屬之技術領域J 發明領域 5 -10 15 參 本發明係關於正型光敏性樹脂組成物。更尤其,本發 明係關於具有絕佳耐熱性並能提供高敏感性與高解析度精 細圖案的正型光敏性樹脂組成物。 L Λ* 椅;3 相關技術說明 近來’隨著半導體與液晶顯示裝置傾向需求更高整合 性、更高信賴性、和更高密度,研究者已積極進行使用具 问純度與工作性能之有機材料的研究。因此,半導體裝置 的表面保護層與層間絕緣層需要具有絕佳耐熱性與絕佳電 氣機械性能的樹脂組成物。此外,為滿足被要求更高整合 性的表面保護層與層間絕緣層之需求,能形成高解析度精 密圖案的樹脂組成物已引起關注。以具有絕佳耐熱性與絕 佳電氣機械性能的樹脂組成物形成表面保護層與層間絕緣 層圖案以及能形成精密高解析度圖案是核心技術,該技術 使得創造超高積體半導體成為可行。 習用正型光敏性樹脂組成物係藉由將光敏性醋化重氮 親加至聚酿胺聚合物、或藉由使聚醯胺聚合物和醋化重氮 醌共價鍵結製備。使用該組成物的一般圖案形成製程包括 以圖案化光罩使光敏性樹脂組成物曝露於特定波長的光。 在曝光部分,重氮醌化合物會化學變性以將其轉化成羧 酸^後’使曝光層和特定_(傳統Λ ’崎性顯影水溶液) 20 201015224 接觸。包括經轉化羧酸的組成物部分增加了對鹼性顯影溶 液的溶解度,藉此被選擇性地顯影。然後加熱圖案化層以 提供固化圖案。 就使用表面保護層或層間絕緣層的技術而言,有必要 5 發展在固化製程後具有高耐熱性與絕佳機械性能的組成物 材料以及具有高解析度與高敏感性之光性能的圖案化材 料。然而,為增進保護層的作用,應將其設計成提供較多 份量的芳族化合物、較高的聚合物分子量、較高的交聯程 度、及較低流動性,但為增進光學特性,應將其設計成提 10 供較少份量的芳族化合物、較低的聚合物分子量、較低的 交聯程度、及較高流動性,故不容易發展滿足分歧性能的 材料。 尤其’因為習用聚醯胺的精密圖案性能和固化後的層 性能係呈負相關’故改良光敏性樹脂組成物的發展有限。 15 此外,儘管可溶性聚醯亞胺可增進機械層性能,但由 於閉環結構所致,曝光波長的透射度變差,故最終解析度 與敏感性降低,用於形成精密圖案的性能變差。 如上所示,習用光敏性樹脂組成物仍有無法滿足高度 積體半導體裝置之改良所需的更精密圖案與改良機械性能 20 之需求的問題。因此’有發展為克服習用材料限制所需之 新型光敏性樹脂材料的需求。 I:發明内容;J 發明概要 本發明一例示具體例係提供一種正型光敏性樹脂組成 201015224 物。本發明另一例示具體例係提供—種具有絕佳耐熱性並 ㈣具有高㈣性與高騎度之精細圖案的正型光敏性 . 樹脂。 本發明又-具體例提供一種使用該光敏性樹脂組成物 5 製造光敏性圖案的方法。 本發明另外的具體例係提供使用該正型光敏性樹脂組 成物製造的光敏性樹脂層及半導體電子構件。 ❿ 料明之具義並不限於上述科技目的,熟習此藝者 可理解其他科技目的。 1〇 根據本發明一具體例,提供了-種正型光敏性樹脂組 • 錢,該組成物包括(A)具下式1之聚酿胺聚合物、⑻㈣ 重氮酿化合物、(C)切基化合物、及(D)溶劑。 , [化學式1]TECHNICAL FIELD OF THE INVENTION The invention relates to a positive photosensitive resin composition. More particularly, the present invention relates to a positive photosensitive resin composition which has excellent heat resistance and can provide a high sensitivity and high resolution fine pattern. L Λ* Chair; 3 Related Technical Notes Recently, as semiconductors and liquid crystal display devices tend to have higher integration, higher reliability, and higher density, researchers have actively used organic materials with purity and workability. Research. Therefore, the surface protective layer and the interlayer insulating layer of the semiconductor device require a resin composition having excellent heat resistance and excellent electrical and mechanical properties. Further, in order to meet the demand for a surface protective layer and an interlayer insulating layer which are required to be more integrated, a resin composition capable of forming a high-resolution fine pattern has attracted attention. It is a core technology to form a surface protective layer and an interlayer insulating layer pattern with a resin composition having excellent heat resistance and excellent electrical mechanical properties, and to form a precise high-resolution pattern, which makes it possible to create an ultra-high-level integrated semiconductor. Conventional photosensitive resin compositions are prepared by co-adding photosensitive acetonitrile to a polyamine polymer or by covalently bonding a polyamine polymer to a acetonitrile diazonium. The general pattern forming process using the composition includes patterning the photomask to expose the photosensitive resin composition to light of a specific wavelength. In the exposed portion, the diazonium compound is chemically denatured to convert it into a carboxylic acid, and then the exposed layer is brought into contact with a specific _ (traditional ’ 崎 崎 developer aqueous solution) 20 201015224. The portion of the composition including the converted carboxylic acid increases the solubility to the alkaline developing solution, thereby being selectively developed. The patterned layer is then heated to provide a cured pattern. In the case of a technique using a surface protective layer or an interlayer insulating layer, it is necessary to develop a composition material having high heat resistance and excellent mechanical properties after a curing process, and patterning with high resolution and high sensitivity light properties. material. However, in order to enhance the protective layer, it should be designed to provide a large amount of aromatic compounds, a higher polymer molecular weight, a higher degree of crosslinking, and a lower fluidity, but in order to enhance optical properties, It is designed to provide a smaller amount of aromatic compound, a lower polymer molecular weight, a lower degree of crosslinking, and a higher fluidity, so that it is not easy to develop a material that satisfies the divergence property. In particular, since the precision pattern properties of the conventional polyamines are negatively correlated with the layer properties after curing, the development of the photosensitive resin composition is limited. Further, although the soluble polyimine enhances the mechanical layer properties, the transmittance of the exposure wavelength is deteriorated due to the closed-loop structure, so that the final resolution and sensitivity are lowered, and the performance for forming a precise pattern is deteriorated. As described above, the conventional photosensitive resin composition still has a problem that it cannot satisfy the demand for a more precise pattern and improved mechanical properties 20 required for improvement of a highly integrated semiconductor device. Therefore, there is a need to develop new photosensitive resin materials required to overcome the limitations of conventional materials. I: SUMMARY OF THE INVENTION J SUMMARY OF THE INVENTION An exemplary embodiment of the present invention provides a positive photosensitive resin composition 201015224. Another exemplary embodiment of the present invention provides a positive photosensitive property which has excellent heat resistance and (4) a fine pattern having high (four) properties and high riding comfort. Resin. A further embodiment of the present invention provides a method of producing a photosensitive pattern using the photosensitive resin composition 5. Another specific example of the present invention provides a photosensitive resin layer and a semiconductor electronic member produced by using the positive photosensitive resin composition.料 It is not limited to the above scientific and technological purposes, and those skilled in the art can understand other scientific and technological purposes. 1A According to a specific example of the present invention, there is provided a positive photosensitive resin group comprising: (A) a polystyrene polymer having the following formula 1, (8) (iv) a diazobenzene compound, and (C) a cut. a base compound, and (D) a solvent. , [Chemical Formula 1]

NH—XI- -HNOC—Y1—C0NH—X1- 墨 L 1 . R1 ml HNOC—Y2—c〇nh_X2. R2 在上式1中, m2 NH —E2NH—XI--HNOC—Y1—C0NH—X1- Ink L 1 . R1 ml HNOC—Y2—c〇nh_X2. R2 In Equation 1, m2 NH—E2

Xl與X2係相同或不同且獨立地為二價至四價有機基團,Xl and X2 are the same or different and independently are divalent to tetravalent organic groups,

Yl與Υ2係相同或不同,立地為二價至六價有機基團,Yl is the same or different from the Υ2 system, and the site is a divalent to hexavalent organic group.

Rl與R2係相同或不同且獨立地為氫或cue5有機基團, 咖2係相同或不同且獨立地為氫,或衍生自一選自由 單猶及其活性衍生物所構成之群_部分,前提是仏與 e2皆非氫, 瓜屬叫係相1¾或不同且獨立地為〇至1〇〇,且 11^+1112介於5至 100。 5 20 201015224 根據本發明另一具體例,提供了一種製造光敏性圖案 的方法’其包括將上述正型光敏性樹脂組成物塗在支撐基 材上並使其乾燥成樹脂組成物層,使該樹脂組成物層曝 光’以驗性顯影溶液使經曝光樹脂組成物層顯影,並加熱 5 經顯影樹脂組成物層。 根據本發明又一具體例,提供了一種用於半導體的半 導體電子構件,其包括使用該正型光敏性樹脂組成物製造 的光敏性樹脂層。 此後,將詳細說明本發明的具體例。 10 根據本發明一具體例,正型光敏性樹脂組成物係包括聚 醯胺的一端或兩端被衍生自選自由單羧酸與活化衍生物所 構成之群組的烷基、芳基、脂環基、或雜環基封端以使未 曝光部分與曝光部分的溶解度差異最大化。因此,以該光敏 性樹脂組成物形成圖案時,曝光部分的顯影速率增加了故 15有可能形成高解析度圖案。在固化製程後,閉環程度與交聯 程度增進了,提供具絕佳膜特性的光敏性樹脂層。、 圖式簡單說明 第1圖係展示使用正型光敏性樹脂組成物製造圖案的 製程圖。 ^ 20 【實施方式】 較佳實施例之詳細說明 此後將詳細說明本發明之例示具體例。然而,該等具 體例僅為例示並不侷限本發明。 、 根據本發明-具_之綠輯脂纟讀物係包括⑷ 201015224 以下式1表示的聚醯胺聚合物、(B)酯化重氮醌化合物、(c) 含盼基化合物、及(D)溶劑。 用於本案時,在無提供特定定義時,「經取代」一詞係 指一者被包括鹵素、烷基、芳基、烷氧基、胺基、或烯基 5 的至少一取代基取代。 用於本案時,在無提供特定定義時,「烷基」一詞係指 C1至C30烧基’較佳為C1至C15烷基,「芳基」一詞係指以 至C30芳基,較佳為C6至C18芳基,「烯基」一詞係指匸2至 C30烯基,較佳為C2至C15烯基,「烷氧基」一詞係指〇至 10 C30烧氧基,較佳為ci至C15院氧基,而「脂環基」一詞係 才曰C3至C40環燒基或C3至C40環烯基,較佳為C3至C24環炫 基或C3至C24環烯基。 用於本案時,在無提供特定定義時,「二價至四價有機 基團」與「二價至六價有機基團」用詞係分別指稱包括2至 15 4個官能基的有機基團與包括2至6個官能基的有機基團。官 能基係指氯以外的取代基。 用於本案時,在無提供特定定義時,「雜環」一詞係指 選自由「雜芳基」、「雜環烷基」、「雜環烯基」、與「雜環炔 基」所構成的群組之一。 20 用於本案時,在無提供特定定義時,「雜-化合物」一 詞係指包括選自由N、〇、p、與Si所構成的群組之至少一 原子代替碳的化合物。 此後將詳細說明各成分。 (A)聚酿胺聚合你 7 201015224 聚醯胺聚合物係以下式1表示。 [化學式1] E1—NH—X1- —HN0C 〜Y1 — CONH —X1 — L 丨 - ml -HNOC—Y2 —CONH X2 R1 1 」 Q0 NH-E2 在上式1中, 5 Xl與&係相同或不同且獨立地為二價至四價有機基團, γ#γ2係㈣或不同且獨立地為二價至六價有機基團, 尺獻2係相同或不同且獨立地為氫或01至〇有機基團, ” e#e2#相同或不同且獨立地為氫,或衍生自—選自由 單羧酸及其雜衍生騎構成之群組的部分,前提是&與E2 10皆非氣,較佳地,El與E2為炫基、芳基、脂環基、或雜環基, 叫與叫係相同或不同且獨立地為〇至1〇〇,且 1^+1¾介於5至 1〇〇。 15R1 and R2 are the same or different and are independently hydrogen or cue5 organic groups, and the coffee 2 is the same or different and independently hydrogen, or is derived from a group selected from the group consisting of monospores and active derivatives thereof, The premise is that both 仏 and e2 are non-hydrogen, and the genus is called 13⁄4 or different and independently 〇 to 1〇〇, and 11^+1112 is between 5 and 100. 5 20 201015224 According to another embodiment of the present invention, there is provided a method of producing a photosensitive pattern comprising: coating the above positive photosensitive resin composition on a support substrate and drying it into a resin composition layer, The resin composition layer is exposed to develop the exposed resin composition layer with an organic developing solution, and heats the 5-developed resin composition layer. According to still another embodiment of the present invention, there is provided a semiconductor electronic component for a semiconductor comprising a photosensitive resin layer produced using the positive photosensitive resin composition. Hereinafter, specific examples of the present invention will be described in detail. According to one embodiment of the present invention, the positive photosensitive resin composition includes one or both ends of polyamine which are derived from an alkyl group, an aryl group, an alicyclic ring selected from the group consisting of a monocarboxylic acid and an activated derivative. The base or heterocyclic group is capped to maximize the solubility difference between the unexposed portion and the exposed portion. Therefore, when the photosensitive resin composition is patterned, the development rate of the exposed portion is increased so that it is possible to form a high-resolution pattern. After the curing process, the degree of ring closure and the degree of crosslinking are enhanced to provide a photosensitive resin layer having excellent film properties. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a process diagram for producing a pattern using a positive photosensitive resin composition. [Embodiment] DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific examples of the present invention will be described in detail. However, these specific examples are merely illustrative and are not intended to limit the invention. According to the present invention, the green grease reading system includes (4) 201015224, a polyamine polymer represented by the following formula 1, (B) an esterified diazonium compound, (c) a compound containing a group, and (D) Solvent. As used in this context, the term "substituted" when used in the absence of a specific definition means that one is substituted with at least one substituent including a halogen, an alkyl group, an aryl group, an alkoxy group, an amine group, or an alkenyl group 5. In the present case, the term "alkyl" means that C1 to C30 alkyl group is preferably C1 to C15 alkyl, and the term "aryl" means C30 aryl, preferably. The term "alkenyl" refers to 匸2 to C30 alkenyl, preferably C2 to C15 alkenyl, and the term "alkoxy" refers to oxime to 10 C30 alkoxy, preferably. It is ci to C15, and the term "alicyclic" is used for the C3 to C40 cycloalkyl or C3 to C40 cycloalkenyl group, preferably C3 to C24 cyclodecyl or C3 to C24 cycloalkenyl. In the case of this case, the term "divalent to tetravalent organic group" and "divalent to hexavalent organic group" are used to refer to an organic group including 2 to 15 functional groups, respectively, when no specific definition is provided. And an organic group comprising 2 to 6 functional groups. A functional group refers to a substituent other than chlorine. In the case of this case, the term "heterocyclic" is used in the sense of "heteroaryl", "heterocycloalkyl", "heterocycloalkenyl", and "heterocycloalkynyl". One of the groups formed. In the present case, the term "hetero-compound" means a compound including at least one atom selected from the group consisting of N, 〇, p, and Si in place of carbon, when no specific definition is provided. Each component will be described in detail hereinafter. (A) Polymerization of polyamines 7 201015224 The polyamine polymer is represented by the following formula 1. E1—NH—X1-—HN0C ~Y1 — CONH —X1 — L 丨- ml —HNOC—Y2 —CONH X2 R1 1 ” Q0 NH-E2 In the above formula 1, 5 Xl is the same as & Or different and independently divalent to tetravalent organic groups, γ#γ2 (4) or different and independently divalent to hexavalent organic groups, 2 are the same or different and independently hydrogen or 01 to An organic group, "e#e2# is the same or different and independently hydrogen, or is derived from - a moiety selected from the group consisting of monocarboxylic acids and their heterozygous rides, provided that both & E2 and Preferably, El and E2 are a leukoyl group, an aryl group, an alicyclic group, or a heterocyclic group, which is the same or different from the calling system and independently from 〇 to 1〇〇, and 1^+13⁄4 is between 5 and 1〇〇. 15

以上式1表示的聚醯胺聚合物係如下製備:使二胺單 和選自由四紐二肝、二、二驗、及其活性衍 物所構成之群_酸單體反應,以_反減物,使該, 應產物和封端單體反應,以將反應產物的胺基轉成酿 基。更詳細說明製備聚醯胺聚合物的方法。 該二胺單體可以X(NH2)2表示,丨中χ係和化學式… Xl或X2相同。化學式1的Χι與X2係衍生自二胺單體。 了以下式2至7表示,但不限於彼等。 [化學式2] 20 201015224 [化學式3]The polyamidamide polymer represented by the above formula 1 is prepared by reacting a diamine mono- and a group of acid monomers selected from the group consisting of four New Zealand liver, two, two tests, and active derivatives thereof, with _reduction The product is reacted with the capping monomer to convert the amine group of the reaction product into a brewing group. A method of preparing a polyamine polymer is described in more detail. The diamine monomer can be represented by X(NH2)2, and the lanthanide in the oxime is the same as the chemical formula... Xl or X2. The oxi and X2 of Chemical Formula 1 are derived from a diamine monomer. The following formulas 2 to 7 are shown, but are not limited to those. [Chemical Formula 2] 20 201015224 [Chemical Formula 3]

[化學式4][Chemical Formula 4]

5 [化學式5]5 [Chemical Formula 5]

[化學式6][Chemical Formula 6]

[化學式7][Chemical Formula 7]

Z13 10 在上式2至7中, 乙1至215係相同或不同,且獨立地選自由氫、經取代或未 經取代之烧基、羥基、羧酸基、與硫酵所構成之群組’且 八!至八6係相同或不同,且獨立地選自由CR3R4、S、Ο、 S〇2、CO、CONH、與單鍵所構成之群組,其中R^R4係相 同或不同且獨立地選自由氨、或經取代或未經取代之烷基 15 201015224 所構成之群組且較佳為氟烷基。 二胺單體可包括芳族二胺、脂環二胺、與脂族二胺。 二胺單體的例子包括聯笨胺、雙(4-胺基苯氧基苯基) 砜、雙(3-胺基苯氧基苯基)砜、雙(4-胺基苯氧基)聯苯、雙 5 [4-(4-胺基苯氧基)苯基]醚、1,4-雙(4-胺基苯氧基)苯、4’- 二胺基-3,3’-二羥基聯苯、雙(3-胺基-4-羥基苯基)丙烷、雙 (4-胺基-3-羥基苯基)丙烷、雙(3-胺基-4-羥基笨基)砜、2,2-雙(4-胺基-3-羥基苯基)-1,1,1,3,3,3-六氟丙烷、3,4’-二胺基 二苯醚、4,4’-二胺基二苯醚、3,4’-二胺基二苯甲烷、4,4’-10 二胺基二苯甲烷、3,4’-二胺基二苯颯、4,4’-二胺基二苯砜、 3,4’-二胺基二苯硫醚、4,4’-二胺基二苯硫醚、對苯二胺、 間苯二胺、1,5-萘二胺、2,6-萘二胺、環己二胺、亞甲基雙 環己胺、3,3’-二胺基-4,4’-二羥基聯苯、3,3’-二胺基-4,4’-二羥基砜、4,4’-二胺基-3,3’-二羥基苯基砜、雙(3-胺基-4-15 羥基苯基)甲烷、2,2-雙-(3-胺基-4-羥基苯基)丙烷、2,2-雙-(3-胺基-4-羥基苯基)六氟丙烷、4,4’-二胺基-3,3’-二羥基二苯 甲酮、3,3’-二胺基-4,4’-二羥基二苯甲酮、4,4’-二胺基-3,3’-二羥基二苯醚、1,4-二胺基-2,5-二羥基苯、及1,3-二胺基-2,4-二羥基苯,但不限於彼等。該等二胺單體可單獨或合併使用。 20 二胺單體可較佳選自由4,4’-二胺基二苯醚、4,4’-二胺 基二苯甲烷、2,2-雙-(3-胺基-4-羥基苯基)六氟丙烷、3,3’-二胺基-4,4’-二羥基砜、和彼等的混合物所構成之群組。 含矽二胺單體可連同該二胺單體使用。含矽二胺單體 增加相對於基材的黏著性。 201015224 5Z13 10 In the above formulas 2 to 7, B1 to 215 are the same or different and are independently selected from the group consisting of hydrogen, substituted or unsubstituted alkyl, hydroxyl, carboxylic acid, and thiol. 'And eight! Up to 8 6 are the same or different, and are independently selected from the group consisting of CR3R4, S, Ο, S〇2, CO, CONH, and a single bond, wherein R^R4 are the same or different and independently selected from ammonia Or a substituted or unsubstituted alkyl group 15 201015224 and preferably a fluoroalkyl group. The diamine monomer may include an aromatic diamine, an alicyclic diamine, and an aliphatic diamine. Examples of the diamine monomer include phenylamine, bis(4-aminophenoxyphenyl)sulfone, bis(3-aminophenoxyphenyl)sulfone, bis(4-aminophenoxy)-linked Benzene, bis-5 [4-(4-aminophenoxy)phenyl]ether, 1,4-bis(4-aminophenoxy)benzene, 4'-diamino-3,3'-di Hydroxybiphenyl, bis(3-amino-4-hydroxyphenyl)propane, bis(4-amino-3-hydroxyphenyl)propane, bis(3-amino-4-hydroxyphenyl)sulfone, 2 , 2-bis(4-amino-3-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropane, 3,4'-diaminodiphenyl ether, 4,4'- Diaminodiphenyl ether, 3,4'-diaminodiphenylmethane, 4,4'-10 diaminodiphenylmethane, 3,4'-diaminodiphenyl hydrazine, 4,4'-di Aminodiphenyl sulfone, 3,4'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide, p-phenylenediamine, m-phenylenediamine, 1,5-naphthalenediamine, 2,6-naphthalenediamine, cyclohexanediamine, methylenebiscyclohexylamine, 3,3'-diamino-4,4'-dihydroxybiphenyl, 3,3'-diamino-4, 4'-dihydroxy sulfone, 4,4'-diamino-3,3'-dihydroxyphenyl sulfone, bis(3-amino-4-15 hydroxyphenyl)methane, 2,2-bis-( 3-amino-4-hydroxyphenyl)propane, 2,2-bis-(3- 4-hydroxyphenyl)hexafluoropropane, 4,4'-diamino-3,3'-dihydroxybenzophenone, 3,3'-diamino-4,4'-dihydroxy Benzophenone, 4,4'-diamino-3,3'-dihydroxydiphenyl ether, 1,4-diamino-2,5-dihydroxybenzene, and 1,3-diamino-2 , 4-dihydroxybenzene, but not limited to them. These diamine monomers may be used singly or in combination. The diamine monomer may preferably be selected from the group consisting of 4,4'-diaminodiphenyl ether, 4,4'-diaminodiphenylmethane, 2,2-bis-(3-amino-4-hydroxybenzene Group of hexafluoropropane, 3,3'-diamino-4,4'-dihydroxy sulfone, and mixtures thereof. The guanidine-containing diamine monomer can be used in conjunction with the diamine monomer. The ruthenium containing diamine monomer increases the adhesion to the substrate. 201015224 5

10 1510 15

含矽二胺單體的例子包括雙(4-胺基苯基)二甲基矽 烷、雙(4-胺基苯基)四甲基矽氧烷、雙(p-胺基苯基)四甲基 二矽氧烷、雙(伽馬-胺基丙基)四曱基二矽氧烷、1,4-雙-(伽 馬-胺基丙基二甲矽基)苯、1,3-雙-(胺基丙基)四甲基二矽氧 烷、及類似者,但不限於彼等。較佳的含矽二胺單體包括 雙(4-胺基苯基)四曱基矽氧烷、雙(p-胺基苯基)四曱基二矽 氧烷、或彼等的混合物。 為增加上下層黏著性,有利的是使用含矽二胺單體對 不含矽二胺單體的比例係介於0.1與10 wt%之間的共聚 物。當含矽二胺單體份量落於該範圍内時,光學性能與層 性能不會變差且黏著性極佳。 和二胺單體反應的酸單體可選自由下列所構成之群 組:四羧酸二酐、二羧酸酐、二羧酸、及其活性衍生物。 化學式1的丫1與丫2係衍生自酸單體。 四羧酸二酐可以下式8表示,但不限於此。 [化學式8]Examples of the fluorene-containing diamine monomer include bis(4-aminophenyl)dimethyl decane, bis(4-aminophenyl)tetramethyl decane, bis(p-aminophenyl)tetramethyl Dioxazane, bis(gamma-aminopropyl)tetradecyldioxane, 1,4-bis-(gamma-aminopropyldimethylguanidinyl)benzene, 1,3-double -(Aminopropyl)tetramethyldioxane, and the like, but not limited to them. Preferred geminal diamine-containing monomers include bis(4-aminophenyl)tetradecyl decane, bis(p-aminophenyl)tetradecyldioxane, or a mixture thereof. In order to increase the adhesion of the upper and lower layers, it is advantageous to use a copolymer containing a nonammonium diamine monomer in a ratio of from 0.1 to 10 wt%. When the amount of the fluorene-containing diamine monomer falls within the range, the optical properties and the layer properties are not deteriorated and the adhesion is excellent. The acid monomer which is reacted with the diamine monomer may be selected from the group consisting of tetracarboxylic dianhydride, dicarboxylic anhydride, dicarboxylic acid, and reactive derivatives thereof. The oxime 1 and oxime 2 of Chemical Formula 1 are derived from an acid monomer. The tetracarboxylic dianhydride can be represented by the following formula 8, but is not limited thereto. [Chemical Formula 8]

在上式8中,Y係和化學式1的丫1或丫2相同。 二羧酸單體可以Y(COOH)2表示,其中Y係和化學式1 20 的¥!或Y2相同。 二羧酸單體的活性衍生物可以Y(COK’)2表示,其中Υ 係和化學式1的YiSYz相同,K’為使Y(COOH)2和鹵化物、 11 201015224 或Y(COOH)2* 1 -羥基-1,2,3-苯并三唑反應所獲得的部分。 下式9至16可衍生自酸單體。 [化學式9]In the above formula 8, the Y system is the same as the 丫1 or 丫2 of the chemical formula 1. The dicarboxylic acid monomer may be represented by Y(COOH)2, wherein the Y system is the same as ¥! or Y2 of the chemical formula 120. The reactive derivative of the dicarboxylic acid monomer can be represented by Y(COK')2, wherein the lanthanide is the same as YiSYz of Chemical Formula 1, and K' is such that Y(COOH)2 and a halide, 11 201015224 or Y(COOH)2* The fraction obtained by the reaction of 1-hydroxy-1,2,3-benzotriazole. The following formulas 9 to 16 can be derived from an acid monomer. [Chemical Formula 9]

5 [化學式10]5 [Chemical Formula 10]

[化學式11][Chemical Formula 11]

[化學式12][Chemical Formula 12]

[化學式13][Chemical Formula 13]

Κ9 K10Κ9 K10

* * [化學式14] K11 K12* * [Chemical Formula 14] K11 K12

12 201015224 [化學式15]12 201015224 [Chemical Formula 15]

[化學式16][Chemical Formula 16]

5 在上式9至16中, 1^1至1^21係相同或不同’且獨立地選自由氫、經取代或 未經取代之院基、經基、叛酸基、硫醇、與C〇〇r5所構成 之群組,其中R5為氫或C1至C5烷基,且 土尔相冋或不 、-S〇2- 10 15 _C〇-、-CONH-、與單鍵所構成之群組,其中 6與7係相同或不同且獨立地選自由氫 酸單體可為四羧酸二 聯苯四羧酸二酐、2” 例如苯均四酸二酐、3,3,,4,4、 甲嗣四舰二軒、雙心4,笨四賴mM,-二苯 叛苯基仏二^雙卜^本基冲二肝士-雙-似二 體可為二m酸活性衍生7本基)峻二針、及類似物。酸單 酸單體和1-羥基12 ―、例如羰基齒化物衍生物以及使 物。活性職麟㈣性醋衍生 ]子包括4,4·氧基二苯甲醯氣、鄰苯 13 20 201015224 二甲醯氣、二苯氧基二甲醯氣、攀# χν本基甲醯氯)石風、雙(笨 基甲醯氣)醚、雙(苯基曱醯氣)笨甲 — ^ 、鄰苯二曱酿氣、二 笨氧基苯并三0圭二甲酯、及類似物。 較佳酸單體包括3,3’,4,4’-二贫 本甲_四羧酸二針、雙 (3,4_二鮮基)醚二酐、二苯氧基二甲料、鄰笨二Μ 氣、及類似物,但不限於彼等。 以化學式!表示的聚醢胺聚合物可為共聚物其中二或 多個單體係以不損害由醯胺鍵單元所構成之均聚物或聚人5 In the above formulas 9 to 16, 1^1 to 1^21 are the same or different 'and independently selected from the group consisting of hydrogen, substituted or unsubstituted, thiol, thiol, thiol, and C a group consisting of 〇〇r5, wherein R5 is hydrogen or a C1 to C5 alkyl group, and the group consisting of or not, -S〇2- 10 15 _C〇-, -CONH-, and a single bond a group wherein 6 and 7 are the same or different and are independently selected from the group consisting of a hydrogen acid monomer which may be a tetracarboxylic acid diphenyltetracarboxylic dianhydride, 2" such as pyromellitic dianhydride, 3, 3, 4, 4, Jiayi four ships two Xuan, double heart 4, stupid four mM, - diphenyl thiophene 仏 two ^ double Bu ^ Ben Chong two liver - double - like two body can be two m acid activity derivative 7 The base of the two needles, and the like. The acid monoacid monomer and 1-hydroxy 12 - such as a carbonyl dentate derivative and a derivative. The active occupational lin (four) vinegar derived] includes 4,4 oxy Benzoquinone gas, o-benzene 13 20 201015224 dimethyl hydrazine gas, diphenoxy dimethyl hydrazine gas, climbing # χ 本 本 基 ) ) ) ) ) 、 、 双 双 双 双 双 双 双 双 、 、 、 Helium), abundance - ^, phthalic acid, diphenyloxybenzotrimethane And the like. Preferred acid monomers include 3,3',4,4'-di-poor alpha-tetracarboxylic acid two-needle, bis(3,4-disyl)ether dianhydride, diphenoxy A material, a sterilible gas, and the like, but not limited to the same. The polyamine polymer represented by the chemical formula may be a copolymer in which two or more single systems are not damaged by the guanamine bond unit. Homopolymer or poly

物的光性能、層性能、與水溶性的範圍共聚。該共聚物可 10包括各種型式,舉施來說,無規共聚物、欲段共聚物 '或 接枝共聚物,但在-具體例中,其包括無規共聚物。 此外,和由酸單體與二胺單體反應獲得的反應產物反 應的封端單體可包括選自由單竣酸及其活性衍生物所構成 之群組的化合物。 15 單羧酸可為任何羧酸,尤其是脂環單羧酸,例如環己 基甲酸 '降冰片燒甲酸、金剛烧基甲酸、異冰片基甲酸、Copolymerization of the light properties, layer properties, and water solubility of the article. The copolymer 10 may include various types, for example, a random copolymer, a copolymer, or a graft copolymer, but in a specific example, it includes a random copolymer. Further, the blocked monomer which reacts with the reaction product obtained by reacting the acid monomer with the diamine monomer may include a compound selected from the group consisting of monodecanoic acid and a reactive derivative thereof. 15 The monocarboxylic acid may be any carboxylic acid, especially an alicyclic monocarboxylic acid such as cyclohexylcarboxylic acid 'norbornic acid formic acid, adamantyl formate, isobornyl formate,

及降冰片烯基甲酸、或其活性衍生物。單羧酸可單獨或合 併使用。 羧酸的活性衍生物包括環己基甲醯氣、降莰烷甲醯 乳、降冰片烯甲醯氣、金剛烷基甲醯氣、異冰片基曱醯氣、 4_降冰片烯笨曱醯氣、環己基苯并三唑曱酯、降冰片烯苯 并三唑甲酯、及類似物。 聚酿胺聚合物的分子量可在不損害本發明優點的範圍 内選擇,但在一具體例中,重量平均分子量(Mw)係介於 14 201015224 500至500,OOO,在另一具體例中,其介於1000至50,000, 以確保有效溶解度與塗覆特性及使圖案化後的圖案形成 效果最大化。當重量平均分子量落於該範圍内時,有可 能提供有機溶劑足夠的物理特性與絕佳溶解度,使得便 5 於操作。 『B1醋化重氣醌化合物 酯化重氮醌化合物係作用為光活化合物(PAC),較佳包 括1,2-重氮苯醌或1,2-重氮萘醌結構。該等化合物係說明於 美國專利2,772,975號、2,797,213號、與3,669,658號。酯化 10 重氮醌化合物可包括以下式17至19表示的化合物,但不限 - 於彼等。 [化學式17]And norbornene-based formic acid, or a reactive derivative thereof. The monocarboxylic acids can be used singly or in combination. Reactive derivatives of carboxylic acids include cyclohexylformamidine, norbornane methyl hydrazide, norbornene methyl hydrazine, adamantyl carbene, isobornyl helium, 4 borne norbornene , cyclohexylbenzotriazol ester, norbornene benzotriazole methyl ester, and the like. The molecular weight of the polystyrene polymer can be selected within the range not impairing the advantages of the present invention, but in a specific example, the weight average molecular weight (Mw) is between 14 201015224 500 and 500, OOO, in another specific example, It is between 1000 and 50,000 to ensure effective solubility and coating characteristics and to maximize patterning after patterning. When the weight average molecular weight falls within this range, it is possible to provide sufficient physical properties and excellent solubility of the organic solvent to make it easy to handle. "B1 vinegar heavy gas hydrazine compound The esterified diazonium compound acts as a photoactive compound (PAC), preferably including a 1,2-diazonium benzoquinone or a 1,2-diazonaphthoquinone structure. Such compounds are described in U.S. Patent Nos. 2,772,975, 2,797,213, and 3,669,658. The esterified 10 diazonium compound may include the compounds represented by the following formulas 17 to 19, but is not limited thereto. [Chemical Formula 17]

[化學式18][Chemical Formula 18]

15 201015224 [化學式18-1] 〇15 201015224 [Chemical Formula 18-1] 〇

S02 [化學式18-2] 〇S02 [Chemical Formula 18-2] 〇

5 [化學式19]5 [Chemical Formula 19]

在上式17至19中, 01至04係相同或不同,且獨立地選自由氫與經取代或 未經取代之烷基所構成之群組,該烷基較佳為甲基, 10 以至如係相同或不同,且獨立地為介於1至3之整數, m3為0至3之整數, 0!至09係相同或不同,且獨立地為OQ,且 Q為氫、或以上式18-1或18-2表示。Q為氫的比例,亦 即,芳環中的OH取代比例係介於0至90mol%,較佳30至 15 80mol%。在該範圍内,可提供適宜光敏性與適宜光吸收 度,以有利地形成圖案。 16 201015224 根據一具體例’酯化重氮醌化合物可以以100重量份聚 醯胺聚合物計之1至50重量份被包括,在另一具體例中,其 介於5至30重量份。當酯化重氮醌化合物份量落於該範圍内 時,曝光無殘留物,合宜地形成圖案,並有可能避免顯影 期間的膜厚度損耗及提供良好圖案。 (C)含酚某化合物 含盼基化合物係作用為溶解抑制劑,以控制曝光部分 與未曝光部分的溶解率差異。 含盼基化合物包括了 2,6-二曱氧基甲基_4+丁酚、2,6_ 二甲氧基甲基-P-甲酚、或2,6-二乙氧基曱基_p_甲酚,但不 限於彼等。 含齡基化合物可以下式20至25表示,但不限於彼等。 [化學式20]In the above formulas 17 to 19, 01 to 04 are the same or different and are independently selected from the group consisting of hydrogen and a substituted or unsubstituted alkyl group, and the alkyl group is preferably a methyl group, 10 or the like. Is the same or different, and independently is an integer between 1 and 3, m3 is an integer from 0 to 3, 0! to 09 are the same or different, and are independently OQ, and Q is hydrogen, or above formula 18- 1 or 18-2 is indicated. Q is a ratio of hydrogen, that is, the ratio of OH substitution in the aromatic ring is from 0 to 90 mol%, preferably from 30 to 15 80 mol%. Within this range, suitable photosensitivity and suitable light absorbance can be provided to advantageously form a pattern. 16 201015224 According to a specific example, the esterified diazonium compound may be included in an amount of from 1 to 50 parts by weight based on 100 parts by weight of the polyamide polymer, and in another specific example, from 5 to 30 parts by weight. When the amount of the esterified diazonium compound falls within the range, no residue is exposed, a pattern is suitably formed, and it is possible to avoid film thickness loss during development and to provide a good pattern. (C) A compound containing a phenol The compound containing a precursor is used as a dissolution inhibitor to control the difference in dissolution rate between the exposed portion and the unexposed portion. The group-containing compound includes 2,6-dimethoxymethyl-4+butanol, 2,6-dimethoxymethyl-P-cresol, or 2,6-diethoxyindolyl-p _ cresol, but not limited to them. The age-containing compound can be represented by the following formulas 20 to 25, but is not limited thereto. [Chemical Formula 20]

15 20 在上式20中’ Rg至R10係相同或不同,且獨立地為氛、 或經取代或未經取代之烧基, 尺11至尺15係相同或不同,且獨立地選自由H、QH、與 經取代或未經取代之烷基所構成之群組,該烧基較佳為 CH3,且 n10為1至5之整數。 17 201015224 [化學式21]15 20 In the above formula 20, 'Rg to R10 are the same or different, and are independently an atmosphere, or a substituted or unsubstituted alkyl group, the scales 11 to 15 are the same or different, and are independently selected from H, The group consisting of QH and a substituted or unsubstituted alkyl group is preferably CH3, and n10 is an integer of from 1 to 5. 17 201015224 [Chemical Formula 21]

在上式21中, R!6至Rai係相同或不同,且獨立地選自由H、〇H、與 5 經取代或未經取代之烷基所構成之群組, A*為CR’R”或單鍵,其中R’與R”係相同或不同,且 獨立地為氫、或經取代或未經取代之烷基,該烷基較佳 為CH3,且 叫+叫忏叫與叫十!!!5.!!!6係相同或不同,且獨立地為$ 10 或更小的整數。 [化學式22]In the above formula 21, R!6 to Rai are the same or different and are independently selected from the group consisting of H, 〇H, and 5 substituted or unsubstituted alkyl groups, A* is CR'R" Or a single bond, wherein R' and R" are the same or different, and are independently hydrogen, or a substituted or unsubstituted alkyl group, the alkyl group is preferably CH3, and is called + squeaking and calling ten! !!5.!!!6 is the same or different and is independently an integer of $10 or less. [Chemical Formula 22]

在上式22中, R22至R24係相同或不同’且獨立地為氫' 或經取代戋未 15 經取代之烷基, ηπ、!^8、與邮係相同或不同,且獨立地為丨至5之整數, η!9與nso係相同或不同,且獨立地為0至4之整數。 201015224 [化學式23]In the above formula 22, R22 to R24 are the same or different 'and independently hydrogen' or a substituted alkyl group which is not substituted by 15, ηπ, !8, which is the same as or different from the postal system, and is independently 丨To an integer of 5, η!9 is the same as or different from the nso, and is independently an integer from 0 to 4. 201015224 [Chemical Formula 23]

R25至R27係相同或不同,且獨立地選自由氫、〇H、與 5 經取代或未經取代之烷基所構成之群組,且 〃R25 to R27 are the same or different and are independently selected from the group consisting of hydrogen, hydrazine H, and 5 substituted or unsubstituted alkyl groups, and 〃

Hu至η%係相同或不同,且獨立地為為丨至4之整數,^ 提是n22+n24與n23+n26獨立地為5或更小的整數。 [化學式24]Hu to η% are the same or different, and are independently an integer from 丨 to 4, and n22+n24 and n23+n26 are independently an integer of 5 or less. [Chemical Formula 24]

(〇H)n29 (^3〇)η3〇 10 在上式24中 Κ·28為經取代或未經取代之烧基’較佳為CH3, R29至係相同或不同,且獨立地為氫、或經取代或未 經取代之烷基, ηπ29、與如係相同或不同,且獨立地為丨至5之整數,且 n28、ho、與叱2係相同或不同,且獨立地為〇至4之整數, 前提是η27+η28、η29+η3。、與n31+rl32獨立地為5或更小的 整數。 19 201015224 [化學式25](〇H)n29 (^3〇)η3〇10 In the above formula 24, Κ·28 is a substituted or unsubstituted alkyl group, preferably CH3, R29 is the same or different, and independently hydrogen, Or a substituted or unsubstituted alkyl group, ηπ29, which is the same or different from, and independently from 丨 to 5, and n28, ho, and 叱2 are the same or different, and independently from 〇 to 4 The integer is η27+η28, η29+η3. It is an integer of 5 or less independently of n31+rl32. 19 201015224 [Chemical Formula 25]

(〇Η)Π33 识35)|134 --一(§H^$> R34 焱 (' (ΟΗ)π35 ^ώη36 在上式25中’ · I2、R33、與R34係相同或不同,且獨立地為經取代或 未經取代之烷基,較佳為CH3, R35至R38係相同或不同’且獨立地為氫、或經取代或未 經取代之烷基, 化3、η%、與化9係相同或不同’且獨立地為〗至5之整數, η34、η%、與叱8係相同或不同,且獨立地為〇至4之整數,且 1137為1至4之整數, 前提是η33+η34、η35+η36、與η38+η39獨立地為5或更小的 _ 整數。 根據一具體例,含酚基化合物係以以1〇〇重量份聚醯胺 聚合物計之0.1至3〇重量份被包括。當含齡基化合物份量落 。玄範圍内時,敏感性不會在顯影期間變差’並適宜地增 加未曝光部分的溶解率以提供良好圖案。此外,冷凌日^ 會沉殿’展現了絕佳_存安定性。 20 201015224 溶劑可為有機溶劑,較佳為\_甲基_2_吡咯烷酮、伽馬_ 丁内酯、N,N-二甲基乙酸酯、二甲亞颯 '二乙二醇二甲鍵、 二乙二酵二乙醚、乳酸甲酯、乳酸乙酯、甲基-1,3-丁二醇 乙酸酯、1,3-丁二醇·3_單曱醚、二乙二醇二丁醚、丙二醇 5單甲醚、二丙二醇單甲醚、丙二酵單曱醚乙酸酯、乳酸甲 酯、乳酸乙酯、乳酸丁酯、丙酮酸甲酯、丙酮酸乙酯、甲 基-3-曱氧基丙酸酯、及類似物,但不限於彼等。溶劑可單 獨或合併使用。 溶劑與聚醯胺聚合物可以2〇:8〇至90:10之重量比例使 10用。在該範圍内,可得到足夠厚的膜並可提供良好溶解度 與塗層。 根據另一具體例,提供了一種使用該正型光敏性樹脂 組成物製造光敏性圖案的方法。 使用本發明之正型光敏性樹脂組成物製造光敏性圖案 15的方法係包括:將上述正型光敏性樹脂組成物塗在支撐基 材上並使其乾燥成樹脂組成物層;使該樹脂組成物層曝 光,以鹼性顯影溶液使經曝光樹脂組成物層顯影;並加熱 經顯影樹脂組成物層。 第1圖係展示使用正型光敏性樹脂組成物製造圖案的 20製程圖。此後,該方法係參照第1圖更詳細地說明。 如第1圖所示,欲操作物件丨,例如半導體基材,係塗 有光敏性樹脂組成物,以提供光敏性樹脂組成物層2(51)。 然後’使光敏性樹脂組成物層曝光(S2),樹脂組成物產 生化學變化,曝光部分的溶解率增加。隨後,以驗性溶液 21 201015224 顯影(S3),以提供圖案。 在曝光製程(S2)期間,當使用光罩(未顯示)照射丨線或 類似者之UV光使光敏性樹脂組成物層2曝光時,曝光部分3 的光敏性試劑產生化學變化,但未曝光部分4並無產生化學 5 變化。在接著的製程期間,當以鹼性水溶液使經曝光光敏 性樹脂組成物層顯影(S3)時,已化學變化的曝光部分3被移 除’提供了形成圖案的光敏性樹脂組成物層5。 當加熱形成有圖案的光敏性樹脂組成物層時,樹脂組 成物的圖案層被固化,提供了光敏性樹脂組成物層6。 參 10 根據本發明另一具體例,提供了一種半導體電子構 件,其包括使用正型光敏性樹脂組成物獲得的光敏性樹脂 層。光敏性樹脂層6可應用至表面保護層或層間絕緣層。此 外,可廣泛應用至需要具鬲敏感性與高解析度之正型圖案 的各種領域。 15 下列實施例更詳細地例示本發明。然而,可理解到本 發明不限於該等實施例。 <合成實施例1> :合成聚醢胺聚合蘇 . 在氮流動的同時’將18.3g 2,2-雙-(3-胺基_4-經苯基)六 氟丙燒加至配有授拌器、溫控裝置、氮氣注入器與冷凝器 20 的四頸燒瓶中’並將N-甲基-2-d比洛烧酮(nmp)置入且 溶解。 待固體完全溶解’將9.9g吼咬置入該溶液。在溶液溫 度維持於5°C的同時’將14.8g 4,4、氧基二苯甲醯氣溶於 142gN-甲基-2-吡咯烷酮(NMP),以提供一溶液。以三十分 22 201015224 鐘將該溶液慢慢滴入其中。滴入後的一小時,反應於5°c進 行’然後使溫度升至至溫,並搖動一小時。之後,置入1.5g 環己基甲酿氯並搖動一小時以完成反應。 將反應混合物置入水/甲醇=1〇/1(體積比)溶液’以生成 5 沉澱物。將該沉澱物過濾、以水充分清洗、然後於8(TC乾 燥24小時或更久’以合成以下列化學式^丨表示的聚醯胺聚 合物。從所合成聚合物的GPC結果,確認重量平均分子量 為 11K。 (化學式1-1)(〇Η)Π33 识35)|134-一(§H^$> R34 焱(' (ΟΗ)π35 ^ώη36 in the above formula 25' · I2, R33, and R34 are the same or different and independent Is a substituted or unsubstituted alkyl group, preferably CH3, R35 to R38 are the same or different 'and independently hydrogen, or substituted or unsubstituted alkyl, 3, η%, and 9 is the same or different 'and independently' to an integer of 5, η34, η%, and 叱8 are the same or different, and are independently an integer from 〇 to 4, and 1137 is an integer from 1 to 4, provided that Η33+η34, η35+η36, and η38+η39 are independently _ integers of 5 or less. According to a specific example, the phenol-based compound is 0.1 to 3 in terms of 1 part by weight of the polyamidamide polymer. The 〇 part by weight is included. When the amount of the compound containing the base group falls within the range of the imaginary range, the sensitivity does not deteriorate during development' and the dissolution rate of the unexposed portion is appropriately increased to provide a good pattern. Huishen's showcases excellent stability. 20 201015224 The solvent can be an organic solvent, preferably \_methyl_2_pyrrolidone, gamma-butyrolactone, N,N- Methyl acetate, dimethyl hydrazine 'diethylene glycol dimethyl bond, diethyl ether diethyl ether, methyl lactate, ethyl lactate, methyl-1,3-butanediol acetate, 1, 3-butanediol·3_monodecyl ether, diethylene glycol dibutyl ether, propylene glycol 5 monomethyl ether, dipropylene glycol monomethyl ether, propylene glycol monoterpene ether acetate, methyl lactate, ethyl lactate, Butyl lactate, methyl pyruvate, ethyl pyruvate, methyl-3-methoxypropionate, and the like, but not limited to them. Solvents may be used singly or in combination. Solvents and polyamine polymers It can be used in a weight ratio of 2 〇:8 〇 to 90:10. Within this range, a sufficiently thick film can be obtained and a good solubility and coating can be provided. According to another specific example, a positive type is provided. A method of producing a photosensitive pattern by using a photosensitive resin composition. A method of producing a photosensitive pattern 15 using the positive photosensitive resin composition of the present invention comprises: coating the above positive photosensitive resin composition on a support substrate and Drying into a resin composition layer; exposing the resin composition layer to an exposed developing tree with an alkali developing solution The composition layer is developed; and the developed resin composition layer is heated. Fig. 1 is a 20-process diagram for producing a pattern using a positive photosensitive resin composition. Thereafter, the method is explained in more detail with reference to Fig. 1. As shown in Fig. 1, an object to be manipulated, for example, a semiconductor substrate, is coated with a photosensitive resin composition to provide a photosensitive resin composition layer 2 (51). Then 'exposure the photosensitive resin composition layer (S2) The resin composition is chemically changed, and the dissolution rate of the exposed portion is increased. Subsequently, it is developed (S3) with the test solution 21 201015224 to provide a pattern. During the exposure process (S2), when a mask (not shown) is used for irradiation, When the line or the like UV light exposes the photosensitive resin composition layer 2, the photosensitive agent of the exposed portion 3 undergoes a chemical change, but the unexposed portion 4 does not undergo a chemical change. During the subsequent process, when the exposed photosensitive resin composition layer is developed with an alkaline aqueous solution (S3), the chemically changed exposed portion 3 is removed, and the patterned photosensitive resin composition layer 5 is provided. When the patterned photosensitive resin composition layer is heated, the pattern layer of the resin composition is cured to provide the photosensitive resin composition layer 6. According to another embodiment of the present invention, there is provided a semiconductor electronic member comprising a photosensitive resin layer obtained using a positive photosensitive resin composition. The photosensitive resin layer 6 can be applied to a surface protective layer or an interlayer insulating layer. In addition, it can be widely applied to various fields requiring positive patterns with high sensitivity and high resolution. The following examples illustrate the invention in more detail. However, it is to be understood that the invention is not limited to the embodiments. <Synthesis Example 1>: Synthesis of polyamine-polymerized sodium. At the same time as nitrogen flow, 18.3 g of 2,2-bis-(3-amino-4-cyclophenyl)hexafluoropropane was added thereto. In a four-necked flask of a stirrer, a temperature control device, a nitrogen gas injector, and a condenser 20, 'N-methyl-2-d than cyprofenone (nmp) was placed and dissolved. The solid was completely dissolved. 9.9 g of the bite was placed in the solution. While the temperature of the solution was maintained at 5 ° C, 14.8 g of 4,4, oxybenzophenone was dissolved in 142 g of N-methyl-2-pyrrolidone (NMP) to provide a solution. The solution was slowly dropped into it at thirty minutes 22, 2010,152,224. One hour after the dropwise addition, the reaction was carried out at 5 ° C. Then, the temperature was raised to temperature and shaken for one hour. Thereafter, 1.5 g of cyclohexylmethyl chloride was placed and shaken for one hour to complete the reaction. The reaction mixture was placed in a water/methanol = 1 Torr / 1 (volume ratio) solution to give a 5 precipitate. The precipitate was filtered, washed thoroughly with water, and then dried at 8 (TC for 24 hours or longer) to synthesize a polyamine polymer represented by the following chemical formula. From the GPC results of the synthesized polymer, the weight average was confirmed. The molecular weight is 11K. (Chemical Formula 1-1)

10 <会成管施例2> :合威聚醯胺聚合物 除以1.5g降莰烷甲醯氣代替1.5g環己基甲醯氯外’以下 列化學式1-2表示的聚醯胺聚合物係根據和合成實施例1相 同的流程合成。該聚合物的重量平均分子量(Mw)為10K ° 15 (化學式1-2)10 <will be piped Example 2>: Polycarbamide polymer was replaced by 1.5 g of norbornane methyl hydrazine instead of 1.5 g of cyclohexylformamidine. Polymerization of polyamine represented by the following chemical formula 1-2 The system was synthesized according to the same procedure as in Synthesis Example 1. The polymer has a weight average molecular weight (Mw) of 10 K ° 15 (Chemical Formula 1-2)

<合成實施例:合成聚酿胺聚合概 在氮流動的同時,將17·4§2,2-雙_(3_胺基_4_經基苯基) 六氟丙烷與〇.86g 1,3-雙-(胺基丙基)四甲基二矽氧烷加至配 23 201015224 有攪拌器、溫控裝置、氮氣注入器與冷凝器的四頸燒瓶中, 並將280gN-甲基-2-吡咯烷酮(NMP)置入且溶解。 待固體完全溶解,將9.9g吡啶引進該溶液,並將13、 4’4’-氧基二苯甲醯氣引進且溶於142g N-甲基_2_吡咯烷鲖 5 (NMP)的溶液以三十分鐘慢慢滴入,同時使溶液溫度維持 於0至。C。滴完後,於溫度5°C反應一小時,待溫度升至室 溫後,使反應進行—小時。將15 g環己基甲醯氣引進並於 室溫搖動兩小時,然後反應完成。 將反應混合物置入水/甲醇=1〇/1(體積比)溶液,以生成 10 沉殿物。然後將該沉澱物過濾、充分清洗、並於8〇。(:真空 中乾燥24小時或更久,以合成以下列化學式13表示的聚醯 胺聚合物。該聚合物具有11K之重量平均分子量。 (化學式1-3)<Synthesis Example: Synthetic polyamine loading polymerization, while nitrogen flow, 17·4 § 2,2-bis-(3-amino-4-yl-phenylphenyl)hexafluoropropane and ruthenium.86 g 1 , 3-bis-(aminopropyl)tetramethyldioxane was added to a 23-necked flask with a stirrer, temperature control, nitrogen injector and condenser, and 280 g of N-methyl- 2-Pyrrolidone (NMP) was placed and dissolved. After the solid was completely dissolved, 9.9 g of pyridine was introduced into the solution, and 13,4'4'-oxybenzophenone was introduced and dissolved in 142 g of N-methyl-2-pyrrolidinium 5 (NMP) solution. Slowly drip in for 30 minutes while maintaining the solution temperature at 0 to. C. After the completion of the dropwise addition, the reaction was carried out at a temperature of 5 ° C for one hour, and after the temperature was raised to room temperature, the reaction was allowed to proceed for - hour. 15 g of cyclohexylmethylguanidine was introduced and shaken at room temperature for two hours, and then the reaction was completed. The reaction mixture was placed in a water/methanol = 1 Torr / 1 (volume ratio) solution to give a solution. The precipitate was then filtered, washed thoroughly, and taken at 8 Torr. (: drying in a vacuum for 24 hours or more to synthesize a polyamine polymer represented by the following Chemical Formula 13. The polymer has a weight average molecular weight of 11 K. (Chemical Formula 1-3)

15 5.合成實施例4> ^成聚醢胺聚合物15 5. Synthesis Example 4 > ^ Polyamide polymer

除以L5g降莰烷曱醯氣代替1.5g環己基甲醯氣外,以下 列化學式1-4表示的聚醯胺聚合物係根據和合成實施例3相 同的流程合成。該聚合物具有10K之重量平均分子量。 (化學式1-4)The polyamidamide polymer represented by the following Chemical Formulas 1-4 was synthesized according to the same procedure as in Synthesis Example 3 except that L5g of norbornane helium gas was used instead of 1.5 g of cyclohexylmethane. The polymer has a weight average molecular weight of 10K. (Chemical Formula 1-4)

或實施>何_5>1^成聚醢胺聚合物 在氛流動的同時,將18.3 g 2,2-雙-(3-胺基-4-羥基苯基) 24 201015224 六氟丙烷加至配有攪拌器、溫控器、氮氣注入器與冷凝器 的四頸燒瓶中,並將280gN-曱基-2-吡咯烷酮(NMP)置入且 溶解。 待固體完全溶解,將9.9g吡啶引進該溶液,並將11.8 g 5 4,4’-氧基二苯甲醯氯引進且溶於142g N-甲基-2-吡咯烷酮 (NMP)的溶液以30分鐘慢慢滴入所得溶液中,同時使溫度 維持於5°C。滴完後,於溫度5°C反應一小時並加熱至室溫。 搖動一小時後,將1.5 g環己基甲醯氯引進並搖動一小時, 然後反應完成。 10 將反應混合物置入水/甲醇= 1(V1 (體積比)溶液,以生成 沉澱物。然後將該沉澱物過濾、充分清洗、並於80°C真空 中乾燥24小時或更久,以合成以下列化學式1-5表示的聚醢 胺聚合物。該聚合物具有11K之重量平均分子量。 (化學式1-5)Or [>>Ho_5>1^ into a polyamine polymer while the atmosphere is flowing, adding 18.3 g of 2,2-bis-(3-amino-4-hydroxyphenyl) 24 201015224 hexafluoropropane to A four-necked flask equipped with a stirrer, a thermostat, a nitrogen gas injector and a condenser was placed and 280 g of N-mercapto-2-pyrrolidone (NMP) was placed and dissolved. To completely dissolve the solid, 9.9 g of pyridine was introduced into the solution, and 11.8 g of 5 4,4'-oxybenzhydryl chloride was introduced and dissolved in a solution of 142 g of N-methyl-2-pyrrolidone (NMP) to 30 The solution was slowly dropped into the solution while maintaining the temperature at 5 °C. After the completion of the dropwise addition, the mixture was reacted at a temperature of 5 ° C for one hour and heated to room temperature. After shaking for one hour, 1.5 g of cyclohexylformamidine chloride was introduced and shaken for one hour, and then the reaction was completed. 10 The reaction mixture was placed in a water/methanol = 1 (V1 (volume ratio) solution to form a precipitate. The precipitate was then filtered, thoroughly washed, and dried in vacuum at 80 ° C for 24 hours or longer to synthesize A polyamine polymer represented by the following Chemical Formula 1-5. The polymer has a weight average molecular weight of 11 K. (Chemical Formula 1-5)

<合成實施例6> :合成聚醯胺聚合物 ❿ 除以1.5g降莰烷甲醯氣代替1.5g環己基曱醯氯外,以下 列化學式1-6表示的聚醯胺聚合物係根據和合成實施例5相 同的流程合成。該聚合物具有10K之重量平均分子量。 20 (化學式1-6)<Synthesis Example 6>: Synthesis of polyamine polymer ❿ In addition to 1.5 g of norbornane methyl hydrazine instead of 1.5 g of cyclohexyl fluorene chloride, the polyamine polymer represented by the following Chemical Formula 1-6 is based on The same procedure as in Synthesis Example 5 was carried out. The polymer has a weight average molecular weight of 10K. 20 (Chemical Formula 1-6)

<合成實施例7> :合成聚醯胺聚合物 25 201015224 除以1.5g馬來酸酐代替L5S環己基甲醯氯外’以下列化 學式1-7表示的聚醯胺聚合物係根據和合成實施例1相同的 流程合成。該聚合物具有10K之重量平均分子量。 (化學式1-7)<Synthesis Example 7>: Synthesis of Polyamine Polymer 25 201015224 In addition to 1.5 g of maleic anhydride in place of L5S cyclohexylformamidine chloride, the polyamine polymer represented by the following Chemical Formula 1-7 was subjected to synthesis and synthesis. Example 1 was synthesized in the same procedure. The polymer has a weight average molecular weight of 10K. (Chemical Formula 1-7)

除以1.5g 5-降冰片烯-2,3-曱酸酐代替l.5g環己基甲醯氯 外,以下列化學式卜8表示的聚醯胺聚合物係根據和合成實施 例1相同的流程合成。該聚合物具有11K之重量平均分子量。 10 (化學式1-8)The polyamidamide polymer represented by the following chemical formula 8 was synthesized according to the same procedure as in Synthesis Example 1, except that 1.5 g of 5-norbornene-2,3-phthalic anhydride was substituted for 1.5 g of cyclohexylmethane chloride. . The polymer has a weight average molecular weight of 11K. 10 (Chemical Formula 1-8)

<實施例1至12> :合成光欲性樹脂組_成物<Examples 1 to 12>: Synthetic optical resin group_成物

以下表1所示之組成比例將合成實施例1至8合成的各 別聚醯胺聚合物和酯化重氮醌化合物、含酚化合物2,6_二乙 15 氧基甲基-Ρ-甲酚、及溶劑γ-丁内酯(GBL)混合,以提供正型 光敏性樹脂組成物。 表1中的“26a”意指化學式26的Qi至Q3其中兩個係以化 學式26-1表示且其餘·一個是氮的化合物,而26b意指化學 式26的(^至()3其中兩個係以化學式26-2表示且其餘一個是 20 氫的化合物。 26 201015224 [化學式26]The composition ratios shown in the following Table 1 will synthesize the respective polyamine polymers synthesized in Examples 1 to 8 and the esterified diazonium compound, and the phenol-containing compound 2,6-diethyl 15-oxymethyl-oxime-A The phenol and the solvent γ-butyrolactone (GBL) are mixed to provide a positive photosensitive resin composition. "26a" in Table 1 means Qi to Q3 of Chemical Formula 26, two of which are represented by Chemical Formula 26-1 and the remainder one is a compound of nitrogen, and 26b means two of (^ to () 3 of Chemical Formula 26 A compound represented by Chemical Formula 26-2 and the other one being 20 hydrogen. 26 201015224 [Chemical Formula 26]

[化學式26-1] 0[Chemical Formula 26-1] 0

[化學式26-2][Chemical Formula 26-2]

表1 實施例 聚醯胺 S旨化重氮酿 化合私 2,6-二乙氧基 甲基-p-申齡· 溶劑(GBL) 1 10 g,合成 實施例1 26a , 2 g ig 20 g 2 10 g,合成 實施例1 26b * 2 g Ig 20 g 3 10 g,合成 實施例2 26a * 2 g Ig 20 g 4 10 g,合成 實施例2 26b , 2 g ig 20 g 5 10 g,合成 實施例3 26a 9 2 g ig 20 g 6 10 g,合成 實施例3 26b , 2 g ig 20 g 27 201015224 7 實施你U 26a * 2 g lg 20 g 8 1(Lg ’合成 實施你丨4 26b , 2 g lg 20 g 9 1(ij,合成 實施你丨5 26a , 2 g lg 20 g 10 iO g:合成 實施例5 26b , 2 g lg 20 g 11 1(Lg,合成 …實施例(S 26a , 2 g lg 20 g 12 I0 g:合成 實施例6 26b , 2 g lg 20 g _<比較IT施钮^合成糸欲性榭脂組成物 以下表2所示之組成比例將從合成實施例7與8得到的 各別聚酿胺聚合物和酯化重氮酿化合物、含盼化合物、及 參 溶劑,以提供光敏性樹脂組成物。下表2所示之酯化重氮醌 5 化合物係和表1所定義者相同。 表2 實施例 WmM " 金合知 酯化重氮醌 化合物 2,6-二乙氧基 曱基-p-甲酚 溶劑(GBL) 1 mg,合成 實施例7 26a 5 2 g lg 20 g 2 il) g ’合成 實施例7 26b , 2 g 2g 20 g 3 川g,合成 實施例8 26a , 2 g lg lg 4 l〇g,合成 實施例8 26b,2 g lg lg ^實施例13至24> :撒拟通丨键 使從實施例1至12得到的各別光敏性樹脂組成物接受 微影測試,結果係設為實施例13至24並顯示於表3。 將從實施例1至12得到的各別正型光敏性樹脂組成物 塗在矽晶圓上並於125。(:預烤120秒。 以NikonilOc i-線步進機一其為曝光設備使塗有光敏 性樹脂組成物的碎晶圓曝光,並以2.38 wt%四甲基氯氧化 銨(TMAH)水溶液顯影兩分鐘。在蒸館水中浸洗一分鐘,使 28 201015224 用FE-SEM測量以測定CD (關鍵尺寸)。 又’敏感性係測定為最佳曝光時間,其係藉由計算在 曝光顯影後以1比1線寬形成1〇 pm L/S圖案所需的曝光時 間。解析度係測定為在該最佳曝光時間的最小圖案尺寸。 形成圖案後,在氮氣氛中以15〇。〇加熱30分鐘’使溫度 升至350°C—小時’以提供固化膜。 表3 曝光能量(mJ/cm2) 解析度(μιη) 實施例13 400 3 實施例14 300 3 實施例15 370 3 實施例16 280 3 實施例17 440 3 實施例18 350 3 實施例19 420 3 實施例20 330 3 實施例21 380 2 實施例22 300 3 實施例23 480 3 實施例24 290 3 • 參照表3,確認所有解析度具有3 μιη或更小之絕佳數 值。此外,確認曝光能量值顯示4〇〇 m J/cm2或更小之絕佳 10光學性能。亦即,判斷聚酿胺聚合物的末端基團並非衍生 自酐,而是取代成絲、脂縣、或芳基,所以透射度增 加了,同時使未曝光部分與曝光部分的溶解率差異最大化。 <比敉實施例S至8> : 除從各別比較實施例】至4獲得光敏性樹脂組成物外, 15依據如同實施例13的相同流程進行相同微影測試。結果設 為比較實施例5至8且顯示於下表4。 29 201015224 表4 曝光能量(mJ/cm2) 解析度(μπι) 比較實施例5 670 5 比較實施例6 500 7 比較實施例7 680 7 比較實施例8 490 5 如表4所示,使用根據比較實施例丨至4之正型光敏性樹脂 組成物溶液的比較實施例5至8具低透射度,所以曝光能量比 起根據實施例者相對較高,而且由於羧酸餘留在末端基團, 5 所以未曝光部分與曝光部分的溶解率差異為5 μιη或更大。 此外,雖然在實施例中以L/S(線與空間)圖案說明,但本 發明不限於此,而可應用於所有不同圖案,例如孔洞圖案。 儘管已以目前視為實際可行例示具體例說明本發明, 但要理解到本發明不限於所揭示的具體例,而是,相反地, 10 欲涵蓋包括在隨附申請專利範圍之精神與範疇内的各種修 飾與等效配置。Table 1 Example Polyamine S is a diazonium brewing compound 2,6-diethoxymethyl-p-shenling solvent (GBL) 1 10 g, Synthesis Example 1 26a, 2 g ig 20 g 2 10 g, Synthesis Example 1 26b * 2 g Ig 20 g 3 10 g, Synthesis Example 2 26a * 2 g Ig 20 g 4 10 g, Synthesis Example 2 26b, 2 g ig 20 g 5 10 g, Synthesis Example 3 26a 9 2 g ig 20 g 6 10 g, Synthesis Example 3 26b, 2 g ig 20 g 27 201015224 7 Implementing your U 26a * 2 g lg 20 g 8 1 (Lg 'synthesis implementation 丨 4 26b, 2 g lg 20 g 9 1 (ij, synthetic implementation 丨 5 26a, 2 g lg 20 g 10 iO g: Synthesis Example 5 26b, 2 g lg 20 g 11 1 (Lg, synthesis...Example (S 26a, 2 g lg 20 g 12 I0 g: Synthesis Example 6 26b , 2 g lg 20 g _<Comparative IT application button compound 糸 糸 榭 榭 组成 composition The composition ratio shown in Table 2 below will be from Synthesis Example 7 8 obtained individual polyamine polymer and esterified diazonium compound, precursor compound, and reference solvent to provide a photosensitive resin composition. The esterified diazonium 5 compound system and table shown in Table 2 below 1 is the same as defined. Table 2 EXAMPLES WmM " Glyceride esterified diazonium compound 2,6-diethoxymercapto-p-cresol solvent (GBL) 1 mg, Synthesis Example 7 26a 5 2 g lg 20 g 2 il) g 'Synthesis Example 7 26b, 2 g 2g 20 g 3 ng, Synthesis Example 8 26a, 2 g lg lg 4 l〇g, Synthesis Example 8 26b, 2 g lg lg ^Examples 13 to 24>: The respective photosensitive resin compositions obtained in Examples 1 to 12 were subjected to lithography tests by the firing of the overnight bonds, and the results were shown in Examples 13 to 24 and shown in Table 3. The examples obtained from Examples 1 to 12 were obtained. Each positive photosensitive resin composition was coated on a tantalum wafer at 125. (: pre-baked for 120 seconds. A NikonilOc i-line stepper was used as an exposure apparatus to make a crystal of a photosensitive resin composition. It was rounded and developed for 2 minutes with 2.38 wt% aqueous solution of tetramethylammonium chloride (TMAH). It was dipped in steaming water for one minute, and 28 201015224 was measured by FE-SEM to determine CD (critical size). Further, the sensitivity was determined as the optimum exposure time by calculating the exposure time required to form a 1 μm L/S pattern at a line width of 1 to 1 after exposure development. The resolution is determined as the minimum pattern size at the optimum exposure time. After the pattern was formed, it was 15 Torr in a nitrogen atmosphere. The crucible was heated for 30 minutes 'to raise the temperature to 350 ° C - hour' to provide a cured film. Table 3 Exposure Energy (mJ/cm2) Resolution (μιη) Example 13 400 3 Example 14 300 3 Example 15 370 3 Example 16 280 3 Example 17 440 3 Example 18 350 3 Example 19 420 3 Implementation Example 20 330 3 Example 21 380 2 Example 22 300 3 Example 23 480 3 Example 24 290 3 • Referring to Table 3, it was confirmed that all resolutions had excellent values of 3 μm or less. In addition, it was confirmed that the exposure energy value showed an excellent 10 optical performance of 4 〇〇 m J/cm 2 or less. That is, it is judged that the terminal group of the polystyrene polymer is not derived from an anhydride, but is substituted for a silk, a lipid, or an aryl group, so the transmittance is increased, and the difference in the dissolution rate between the unexposed portion and the exposed portion is maximized. Chemical. <Comparative Examples S to 8>: The same lithography test was carried out in accordance with the same procedure as in Example 13 except that the photosensitive resin composition was obtained from each of Comparative Examples to 4. The results were set to Comparative Examples 5 to 8 and shown in Table 4 below. 29 201015224 Table 4 Exposure Energy (mJ/cm2) Resolution (μπι) Comparative Example 5 670 5 Comparative Example 6 500 7 Comparative Example 7 680 7 Comparative Example 8 490 5 As shown in Table 4, use according to comparison Comparative Examples 5 to 8 of the positive photosensitive resin composition solution of Example 4 have low transmittance, so the exposure energy is relatively higher than that according to the examples, and since the carboxylic acid remains in the terminal group, 5 Therefore, the difference in dissolution rate between the unexposed portion and the exposed portion is 5 μm or more. Further, although illustrated in the embodiment in the L/S (line and space) pattern, the present invention is not limited thereto, and can be applied to all different patterns such as a hole pattern. The present invention has been described with reference to the specific embodiments of the present invention, but it is understood that the invention is not limited to the specific examples disclosed, but rather, Various modifications and equivalent configurations.

【圖式簡單說明;J 第1圖係展示使用正型光敏性樹脂組成物製造圖案的 製程圖。 15 【主要元件符號說明】 1···半導體裝置 2···光敏性樹脂組成物層 3…光敏性樹脂組成物層的曝光部分 4…光敏性樹脂組成物層的未曝光部分 5…顯影後的圖案化光敏性樹脂組成物層 6···固化後的光敏性樹脂組成物層 30[Simplified description of the drawings; J Fig. 1 is a process diagram for producing a pattern using a positive photosensitive resin composition. 15 [Description of main component symbols] 1. Semiconductor device 2················· Patterned photosensitive resin composition layer 6···cured photosensitive resin composition layer 30

Claims (1)

201015224 七、申請專利範圍: 1. 一種正型光敏性樹脂組成物,其包含: (A) 以下式1表示的聚醯胺聚合物; (B) S旨化重It酿化合物; 5 (C)含酚基化合物;及 (D)溶劑: [化學式1] E1—NH—XI- -HN0C—Y1—CONH—XI- -HNOC—Y2 —CONH—X2- L 1 」 ml L I 」 R1 R2 NH —E2201015224 VII. Patent application scope: 1. A positive photosensitive resin composition comprising: (A) a polyamidamide polymer represented by the following formula 1; (B) S is a heavy-weighting compound; 5 (C) a phenol-containing compound; and (D) a solvent: [Chemical Formula 1] E1—NH—XI--HN0C—Y1—CONH—XI--HNOC—Y2—CONH—X2-L 1 ” ml LI ” R1 R2 NH —E2 其中在上式1中, 10 乂丨與乂〗係相同或不同且獨立地為二價至四價有機 基團, Yl與Y2係相同或不同且獨立地為二價至六價有機 基團, Ri與R2係相同或不同且獨立地為氫或C1至C5有機 15 基團, E1與E2係相同或不同且獨立地為氫,或衍生自一選 自由單羧酸及其活性衍生物所構成之群組的部分,前提 是E1與E2皆非氫, 1^與1112係相同或不同且獨立地為0至100,且 20 mi+1112介於5至 100。 2.如申請專利範圍第1項之光敏性樹脂組成物,其中該酯 化重氮醌化合物係以以100重量份聚醯胺聚合物計之1 31 201015224 至50重量份的份量被包括, 含酚基化合物係以以100重量份聚醯胺聚合物計之 0.1至30重量份的份量被包括,且 溶劑與聚醯胺聚合物係以20:80至90:10之重量比例 5 被包括。 3. 如申請專利範圍第1項之正型光敏性樹脂組成物,其中 該聚醯胺係以包含下列之方法製備: 使二胺單體和選自由四羧酸二酐、二羧酸酐、二羧 酸、及其活性衍生物所構成之群組的酸單體反應,以得 10 到反應產物;以及 使該反應產物和封端單體反應,以將反應產物的胺基轉 成醯胺基。 4. 如申請專利範圍第3項之正型光敏性樹脂組成物,其中 該二胺單體可以x(nh2)2表示,其中X係和化學式1的X! 15 或X2相同。 5. 如申請專利範圍第3項之正型光敏性樹脂組成物,其中 該二胺單體係包含非矽二胺單體並以X(NH2)2表示,其 中X係和化學式1的乂1或乂2相同,以及含矽二胺單體。 6. 如申請專利範圍第3項之正型光敏性樹脂組成物,其中 20 該酸單體係以Y(COOH)2表示的二羧酸單體,其中Y係和 化學式1的Yi4Y2相同。 7. 如申請專利範圍第3項之正型光敏性樹脂組成物,其中 該酸單體係以Y(COK’)2表示,其中Y係和化學式1的丫! 或Y2相同,K’為使Y(COOH)2*鹵化物、或Y(COOH)2 201015224 和1-羥基-1,2,3-苯并三唑反應所獲得的部分。 8.如申請專利範圍第3項之正型光敏性樹脂組成物,其中 該酸單體為以下式8表示的四羧酸酐: [化學式8] Ο ΟWherein in the above formula 1, 10 乂丨 is the same or different and independently is a divalent to tetravalent organic group, and Y1 and Y2 are the same or different and independently a divalent to hexavalent organic group, Ri is the same or different from R2 and is independently hydrogen or a C1 to C5 organic 15 group, E1 and E2 are the same or different and independently hydrogen, or are derived from a monocarboxylic acid and a reactive derivative thereof. The portion of the group is premised that both E1 and E2 are non-hydrogen, 1^ and 1112 are the same or different and independently are 0 to 100, and 20 mi+1112 is between 5 and 100. 2. The photosensitive resin composition of claim 1, wherein the esterified diazonium compound is included in an amount of 1 31 201015224 to 50 parts by weight based on 100 parts by weight of the polyamide polymer, The phenolic compound is included in an amount of 0.1 to 30 parts by weight based on 100 parts by weight of the polyamide polymer, and the solvent and the polyamine polymer are included in a weight ratio of 5:80 to 90:10. 3. The positive photosensitive resin composition of claim 1, wherein the polyamine is prepared by the method comprising: diamine monomer and selected from tetracarboxylic dianhydride, dicarboxylic anhydride, and The acid monomer of the group consisting of a carboxylic acid and a reactive derivative thereof is reacted to obtain 10 to a reaction product; and the reaction product and the blocked monomer are reacted to convert the amine group of the reaction product into a mercapto group. . 4. The positive photosensitive resin composition of claim 3, wherein the diamine monomer is represented by x(nh2)2, wherein the X system is the same as X!15 or X2 of Chemical Formula 1. 5. The positive photosensitive resin composition of claim 3, wherein the diamine single system comprises a non-nonanediamine monomer and is represented by X(NH2)2, wherein the X system and the oxime 1 of the chemical formula 1 Or the same as 乂2, and containing a quinone diamine monomer. 6. The positive photosensitive resin composition of claim 3, wherein the acid monosystem is a dicarboxylic acid monomer represented by Y(COOH)2, wherein the Y system is the same as Yi4Y2 of Chemical Formula 1. 7. The positive photosensitive resin composition of claim 3, wherein the acid single system is represented by Y(COK') 2, wherein Y is the same as 丫! or Y2 of Chemical Formula 1, K' is The fraction obtained by the reaction of Y(COOH)2* halide or Y(COOH)2 201015224 and 1-hydroxy-1,2,3-benzotriazole. 8. The positive photosensitive resin composition of claim 3, wherein the acid monomer is a tetracarboxylic anhydride represented by the following formula 8: [Chemical Formula 8] Ο Ο 5 ❹ 10 15 其中在上式8中,Y係和化學式1的丫1或丫2相同。 9. 一種製造光敏性圖案的方法,其包含: 將根據申請專利範圍第1至8項中任一項之正型光 敏性樹脂組成物塗在支撐基材上並使其乾燥成樹脂組 成物層; 使該樹脂組成物層曝光; 以鹼性顯影溶液使經曝光樹脂組成物層顯影;且 加熱經顯影樹脂組成物層。 10. —種光敏性樹脂層,其係使用申請專利範圍第1至8項中 任一項之正型光敏性樹脂組成物製成。 11. 一種半導體電子構件,其包含根據申請專利範圍第10項 之光敏性樹脂層。 335 ❹ 10 15 wherein, in the above formula 8, the Y system is the same as 丫1 or 丫2 of the chemical formula 1. A method of producing a photosensitive pattern, comprising: coating a positive photosensitive resin composition according to any one of claims 1 to 8 on a support substrate and drying it into a resin composition layer Exposing the resin composition layer; developing the exposed resin composition layer with an alkali developing solution; and heating the developed resin composition layer. A photosensitive resin layer produced by using the positive photosensitive resin composition of any one of claims 1 to 8. A semiconductor electronic component comprising the photosensitive resin layer according to item 10 of the patent application. 33
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US8841064B2 (en) 2010-12-31 2014-09-23 Cheil Industries Inc. Positive photosensitive resin composition, photosensitive resin film prepared by using the same, and semiconductor device including the photosensitive resin film
US9176381B2 (en) 2009-12-29 2015-11-03 Cheil Industries Inc. Positive type photosensitive resin composition
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US9119320B2 (en) 2012-04-13 2015-08-25 Quanta Computer Inc. System in package assembly
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US8703367B2 (en) 2008-09-29 2014-04-22 Cheil Industries Inc. Positive photosensitive resin composition
US9176381B2 (en) 2009-12-29 2015-11-03 Cheil Industries Inc. Positive type photosensitive resin composition
US8841064B2 (en) 2010-12-31 2014-09-23 Cheil Industries Inc. Positive photosensitive resin composition, photosensitive resin film prepared by using the same, and semiconductor device including the photosensitive resin film
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TWI646150B (en) * 2017-08-22 2019-01-01 Daxin Materials Corporation Photosensitive resin composition, photosensitive resin and electronic device

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