TWI376574B - Positive photosensitive resin composition - Google Patents

Positive photosensitive resin composition Download PDF

Info

Publication number
TWI376574B
TWI376574B TW098108418A TW98108418A TWI376574B TW I376574 B TWI376574 B TW I376574B TW 098108418 A TW098108418 A TW 098108418A TW 98108418 A TW98108418 A TW 98108418A TW I376574 B TWI376574 B TW I376574B
Authority
TW
Taiwan
Prior art keywords
resin composition
photosensitive resin
same
group
positive photosensitive
Prior art date
Application number
TW098108418A
Other languages
Chinese (zh)
Other versions
TW201015224A (en
Inventor
Yong Sik Yoo
Hyun Yong Cho
Doo Young Jung
Jong Hwa Lee
Ji Young Jeong
Min Kook Chung
Kil Sung Lee
Original Assignee
Cheil Ind Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cheil Ind Inc filed Critical Cheil Ind Inc
Publication of TW201015224A publication Critical patent/TW201015224A/en
Application granted granted Critical
Publication of TWI376574B publication Critical patent/TWI376574B/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08FMACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F290/00Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups
    • C08F290/02Macromolecular compounds obtained by polymerising monomers on to polymers modified by introduction of aliphatic unsaturated end or side groups on to polymers modified by introduction of unsaturated end groups
    • C08F290/06Polymers provided for in subclass C08G
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L77/00Compositions of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Compositions of derivatives of such polymers
    • C08L77/06Polyamides derived from polyamines and polycarboxylic acids
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/0226Quinonediazides characterised by the non-macromolecular additives
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/037Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polyamides or polyimides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/075Silicon-containing compounds
    • G03F7/0757Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Description

1376574 六、發明說明: t發明所屬之技術領域3 發明領域 本發明係關於正型光敏性樹脂組成物。更尤其,本發 明係關於具有絕佳对熱性並能提供高敏感性與高解析度精 細圖案的正型光敏性樹脂組成物。 I:先前技術3 相關技術說明1376574 VI. OBJECTS OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a positive photosensitive resin composition. More particularly, the present invention relates to a positive photosensitive resin composition which has excellent heat resistance and can provide a high sensitivity and high resolution fine pattern. I: Prior Art 3 Related Technical Description

近來’隨著半導體與液晶顯示裝置傾向需求更高整合 性、更同仏賴性、和更ifj在、度’研究者已積極進行使用且 高純度與工作性能之有機材料的研究。因此,半導體裝置 的表面保護層與層間絕緣層需要具有絕佳耐熱性與絕佳電 氣機械性能的樹脂組成物。此外,為滿足被要求更高整合 性的表面保護層與層間絕緣層之需求,能形成高解析度精 密圖案的樹脂組成物已引起關注。以具有絕佳耐熱性與絕 佳電氣機械性能的樹脂組成物形成表面保護層與層間絕.緣 層圖案以及能形成精密高解析度圖案是核心技術,該技術 使得創造超高積體半導體成為可行。 習用正型光敏性樹脂組成物係藉由將光敏性g旨化重說 2〇 醌加至聚醯胺聚合物、或藉由使聚醯胺聚合物和酿化重氣 g昆共價鍵結製備。使用該組成物的一般圖案形成製程包括 以圖案化光罩使光敏性樹脂組成物曝露於特定波長的光。 在曝光部分,重氮醌化合物會化學變性以將其轉化成緩 酸。之後,使曝光層和特定材料(傳統上’鹼性顯影水溶液) 3 1376574 接觸。包括經轉化羧酸的組成物部分増加了對鹼性顯影溶 液的溶解度,藉此被選擇性地顯影。然後加熱圖案化層以 提供固化圖案。 就使用表面保護層或層間絕緣層的技術而言,有必要 5 發展在固化製程後具有高耐熱性與絕佳機械性能的組成物 材料以及具有高解斬度與高敏感性之光性能的圖案化材 料。然而,為增進保護層的作用,應將其設計成提供較多 份量的芳族化合物、较高的聚合物分子量、較高的交聯程 度、及較低流動性,但為增進光學特性,應將其設計成提 ίο 供較少份量的芳族化合物、較低的聚合物分子量、較低的 交聯程度、及較高流動性’故不容易發展滿足分歧性能的 材料。 尤其,因為習用聚醯胺的精密圖案性能和固化後的層 性能係呈負相關,故改良光敏性樹脂組成物的發展有限。 15 此外,儘管可溶性聚醯亞胺可增進機械層性能,但由 於閉環結構所致,曝光波長的透射度變差,故最終解析度 與敏感性降低,用於形成精密圖案的性能變差。 如上所示’習用光敏性樹脂組成物仍有無法滿足高度 積體半導體裝置之改良所需的更精密圖案與改良機械性能 20 之需求的問題。因此,有發展為克服習用材料限制所需之 新型光敏性樹脂材料的需求。 I:發明内容3 發明概要 本發明一例示具體例係提供一種正型光敏性樹脂組成 4 物。本發㈣-例示具體例係提供—種具有絕佳賴性並 能形成具有高敏魏與高㈣度之精細时的正型光敏性 樹脂。 本發明又一具體例提供-種使用該光敏性樹脂組成物 製造光敏性圖案的方法。 本發明另外的具體例係提供使用該正型光敏性樹脂組 成物製造的光敏性樹脂層及半導體電子構件。 本發明之具體例並不限於上述科技目的。,熟習此藝者 可理解其他科技目的。 根據本發明-具體例,提供了—種正型光敏性樹脂組 物’該組成物包括(Α)具下式1之聚醯胺聚合物 、(Β)酯化 重氮蛾化合物、(〇切基化合物、及(d)溶劑。 [化學式1] 巾1 E1~~-NH—X1--HN0C—Y1—CONH—X1-L I R1 在上式1中, HNOC—Y2—c〇nh_X2 _ — nh —E2 I 」m2 R2 X】與x2係相同或不同且獨立地為二價至四價有機基團, Υ#Υ2係相同或不同且獨立地為二價至六價有機基團, 地為氫或C1C5有機基團, El_2係相同或不同且獨立地為氫,或衍生自-選自由 ^酸及其活性衍生物所構成之群組的部分,前提是匕與 匕皆非氫, mi與m2係相同或不同且獨立地為〇至励,且 mi+m2介於5至 100。 根據本發明另一具體例,提供了一種製造光敏性圖案 的方法,其包括將上述正型光敏性樹脂組成物塗在支撐基 材上並使其乾燥成樹脂組成物層,使該樹脂組成物層曝 光’以驗性顯影溶液使經曝光樹脂組成物層顯影,並加熱 經顯影樹脂組成物層。 根據本發明又一具體例,提供了 一種用於半導體的半 導體電子構件’其包括使用該正型光敏性樹脂組成物製造 的光敏性樹脂層。 此後’將詳細說明本發明的具體例。 根據本發明一具體例,正型光敏性樹脂組成物係包括聚 酿胺的一端或兩端被衍生自選自由單羧酸與活化衍生物所 構成之群組的烷基、芳基、脂環基、或雜環基封端,以使未 曝光部分與曝光部分的溶解度差異最大化。因此,以該光敏 性樹脂組成物形成圖案時,曝光部分的顯影速率增加了,故 有可能形成高解析度圖案。在固化製程後,閉環程度與交聯 程度增進了’提供具絕佳膜特性的光敏性樹脂層。 圖式簡單說明 第1圖係展示使用正型光敏性樹脂組成物製造圖案的 製程圖。 【實施 > 式】 較佳實施例之詳細說明 此後將詳細說明本發明之例示具體例。然而,該等具 體例僅為例示並不侷限本發明。 根據本發明H狀光敏㈣脂組成物係包括⑷ 1376574 以下式1表示的聚醯胺聚合物、(B)酯化重氮醌化合物、(c) 含酚基化合物、及①)溶劑。 用於本案時’在無提供特定定義時,「經取代」_詞係 指一者被包括鹵素、烷基、芳基、烷氧基'胺基、或烯基 5 的至少一取代基取代。 用於本案時,在無提供特定定義時,「烷基」一詞係指 C1至C30烷基’較佳為C1至C15烷基,「芳基」一詞係指(:6 至C30芳基,較佳為C^C18芳基,「稀基」一詞係指至 C30稀基’較佳為(^至⑶稀基,「烧氧基」一詞係指〇至 10 C3G烧氧基,較佳為C1至⑴院氧基,而「脂環基」一詞係 指C3至⑽環燒基或邮⑽環稀基,較佳為咖⑶環烧 基或C3至C24環烯基。 用於本案時,在無提供特定定義時,「二價至四價有機 基團」與「二價至六價有機基團」用詞係分別指稱包括2至 15 4個官能基的有機基團與包括2至6個官能基的有機基團。官 能基係指氫以外的取代基。 ;本案時,在無提供特定定義時,「雜環」一詞係指 選自由「雜芳基」、「雜環烧基」、「雜環稀基」、與「雜環块 基」所構成的群組之一。 2〇 用於本案時,在無提供特定定義時,「雜·化合物」- 詞係指包括選自1 ντ 自由Ν、0、Ρ、與Si所構成的群組之至少一 原子代替碳的化合物。 此後將詳細說明各成分。 (A)聚醯胺聚 7 1376574 聚醯胺聚合物係以下式1表示。 [化學式1]Recently, as semiconductors and liquid crystal display devices have tended to require higher integration, more reliance on, and more research, organic materials that have been actively used by researchers and have high purity and workability. Therefore, the surface protective layer and the interlayer insulating layer of the semiconductor device require a resin composition having excellent heat resistance and excellent electrical and mechanical properties. Further, in order to meet the demand for a surface protective layer and an interlayer insulating layer which are required to be more integrated, a resin composition capable of forming a high-resolution fine pattern has attracted attention. It is a core technology to form a surface protective layer and an interlayer insulating layer pattern with a resin composition having excellent heat resistance and excellent electromechanical properties, and to form a precise high-resolution pattern, which makes it possible to create ultra-high integrated semiconductors. . The conventional positive photosensitive resin composition is covalently bonded by adding the photosensitive g to the polyamine polymer or by binding the polyamine polymer to the brewing gas. preparation. The general pattern forming process using the composition includes patterning the photomask to expose the photosensitive resin composition to light of a specific wavelength. In the exposed portion, the diazonium compound is chemically denatured to convert it to a slow acid. Thereafter, the exposed layer was brought into contact with a specific material (conventional 'alkaline developing aqueous solution) 3 1376574. The portion including the converted carboxylic acid is added to the solubility of the alkaline developing solution, thereby being selectively developed. The patterned layer is then heated to provide a cured pattern. In the case of a technique using a surface protective layer or an interlayer insulating layer, it is necessary to develop a composition material having high heat resistance and excellent mechanical properties after a curing process, and a pattern having high resolution and high sensitivity light properties. Material. However, in order to enhance the protective layer, it should be designed to provide a large amount of aromatic compounds, a higher polymer molecular weight, a higher degree of crosslinking, and a lower fluidity, but in order to enhance optical properties, It is designed to provide a smaller amount of aromatic compound, a lower polymer molecular weight, a lower degree of crosslinking, and a higher fluidity, so that it is not easy to develop a material that satisfies the divergence performance. In particular, since the precise pattern properties of the conventional polyamines are negatively correlated with the layer properties after curing, the development of the improved photosensitive resin composition is limited. Further, although the soluble polyimine enhances the mechanical layer properties, the transmittance of the exposure wavelength is deteriorated due to the closed-loop structure, so that the final resolution and sensitivity are lowered, and the performance for forming a precise pattern is deteriorated. As described above, the conventional photosensitive resin composition still has a problem that it cannot satisfy the demand for a more precise pattern and improved mechanical properties 20 required for improvement of a highly integrated semiconductor device. Therefore, there is a need to develop new photosensitive resin materials required to overcome the limitations of conventional materials. I. SUMMARY OF THE INVENTION 3 SUMMARY OF THE INVENTION An exemplary embodiment of the present invention provides a positive photosensitive resin composition. The present invention (4) - exemplifying a specific example provides a positive photosensitive resin which has excellent properties and can form a fine with high sensitivity Wei and high (four) degrees. Still another embodiment of the present invention provides a method of producing a photosensitive pattern using the photosensitive resin composition. Another specific example of the present invention provides a photosensitive resin layer and a semiconductor electronic member produced by using the positive photosensitive resin composition. The specific examples of the present invention are not limited to the above scientific and technical purposes. Those who are familiar with this art can understand other scientific and technological purposes. According to the present invention - a specific example, a positive photosensitive resin composition is provided, which comprises a polyamine polymer having the following formula 1, a (meth) esterified diazo moth compound, Base compound, and (d) solvent [Chemical Formula 1] Towel 1 E1~~-NH-X1--HN0C-Y1-CONH-X1-L I R1 In the above formula 1, HNOC-Y2-c〇nh_X2 _ Nh —E2 I ”m2 R2 X] is the same or different from x2 and independently is a divalent to tetravalent organic group, and Υ#Υ2 is the same or different and independently a divalent to hexavalent organic group, the ground is Hydrogen or C1C5 organic group, El_2 is the same or different and independently hydrogen, or derived from a moiety selected from the group consisting of acid and its active derivatives, provided that both ruthenium and osmium are non-hydrogen, mi and M2 is the same or different and independently is 〇-excited, and mi+m2 is between 5 and 100. According to another embodiment of the present invention, there is provided a method of producing a photosensitive pattern comprising the above-mentioned positive photosensitive resin The composition is coated on the support substrate and dried to form a resin composition layer, and the resin composition layer is exposed to an exponentially developed solution to expose the exposed tree. The composition layer is developed and the developed resin composition layer is heated. According to still another embodiment of the present invention, there is provided a semiconductor electronic component for a semiconductor comprising a photosensitive resin layer produced using the positive photosensitive resin composition Hereinafter, a specific example of the present invention will be described in detail. According to an embodiment of the present invention, the positive photosensitive resin composition comprising one or both ends of the polystyrene is derived from a group selected from the group consisting of a monocarboxylic acid and an activated derivative. The alkyl group, the aryl group, the alicyclic group, or the heterocyclic group of the group is blocked to maximize the difference in solubility between the unexposed portion and the exposed portion. Therefore, when the photosensitive resin composition is patterned, the exposed portion is Since the development rate is increased, it is possible to form a high-resolution pattern. After the curing process, the degree of ring closure and the degree of crosslinking increase the 'providing a photosensitive resin layer having excellent film characteristics. FIG. Process diagram for producing a pattern of a positive photosensitive resin composition. [Implementation] Formula Description of Preferred Embodiments Hereinafter, the present invention will be described in detail. Specific examples are exemplified. However, the specific examples are merely illustrative and are not intended to limit the present invention. According to the present invention, the H-form photosensitive (tetra) lipid composition includes (4) 1376574 polyamine polymer represented by the following formula 1, (B) esterification A diazonium compound, (c) a phenol-based compound, and 1) a solvent. When used in the present case, "substituted" _ word means that one is substituted with at least one substituent including a halogen, an alkyl group, an aryl group, an alkoxy 'amine group, or an alkenyl group. In the present case, the term "alkyl" means that the C1 to C30 alkyl group is preferably a C1 to C15 alkyl group, and the term "aryl" means (6 to C30 aryl group). Preferably, it is a C^C18 aryl group, and the term "dilute base" means that the C30 dilute group is preferably (^ to (3) a dilute group, and the term "alkyloxy group" means a hydrazine to 10 C3G alkoxy group. Preferably, it is a C1 to (1) alkoxy group, and the term "alicyclic group" means a C3 to (10) cycloalkyl or a (10) cycloaliphatic group, preferably a ca(3) cycloalkyl or a C3 to C24 cycloalkenyl group. In the present case, when no specific definition is provided, the terms "bivalent to tetravalent organic group" and "bivalent to hexavalent organic group" refer to organic groups including 2 to 15 functional groups, respectively. An organic group comprising 2 to 6 functional groups. The functional group means a substituent other than hydrogen. In the present case, the term "heterocyclic" means selected from "heteroaryl" or "in the absence of a specific definition." One of the groups consisting of a heterocyclic group, a "heterocyclic group", and a "heterocyclic group". 2" In this case, when a specific definition is not provided, "hetero-compound" - word system Means included 1 ντ Free Ν, 0, Ρ, and a compound composed of at least one atom of Si in place of carbon. The components will be described in detail later. (A) Polyamine Poly 7 1376574 Polyamine polymer is the following formula 1 Said. [Chemical Formula 1]

El—NH—XI--HNOC—Y1—CONH—X1--- _ | Jml - R1 HNOC—Y2 —CONH—X2 ——NH —E2 I 」m2 R2 5 在上式1中, 乂丨與乂]係相同或不同且獨立地為二價至四價有機基團, 丫1與丫2係相同或不同且獨立地為二價至六價有機基團, 1^與尺2係相同或不同且獨立地為氫或C1至C5有機基團, E1與E2係相同或不同且獨立地為氫,或衍生自一選自由El—NH—XI—HNOC—Y1—CONH—X1--- _ | Jml - R1 HNOC—Y2 —CONH—X2 —NH —E2 I ”m2 R2 5 In Equation 1, 乂丨 and 乂] The same or different and independently divalent to tetravalent organic groups, 丫1 and 丫2 are the same or different and independently divalent to hexavalent organic groups, 1^ and 尺2 are the same or different and independent The ground is hydrogen or a C1 to C5 organic group, and E1 and E2 are the same or different and independently hydrogen, or are derived from a selected one.

10 15 單羧酸及其活性衍生物所構成之群組的部分,前提是E1與E2 皆非氫.,較佳地,E1與E2為烷基、芳基、脂環基、或雜環基, 〇11與〇12係相同或不同且獨立地為0至100,且 介於5至 100。 以上式1表示的聚醯胺聚合物係如下製備:使二胺單體 和選自由四羧酸二酐、二羧酸酐、二羧酸、及其活性衍生 物所構成之群組的酸單體反應,以得到反應產物,使該反 應產物和封端單體反應,以將反應產物的胺基轉成醯胺 基。更詳細說明製備聚醯胺聚合物的方法。 該二胺單體可以X(NH2)2表示,其中X係和化學式1的 乂1或乂2相同。化學式1的乂丨與乂]係衍生自二胺單體。 X可以下式2至7表示,但不限於彼等。 [化學式2]10 15 Part of a group consisting of a monocarboxylic acid and a reactive derivative thereof, provided that both E1 and E2 are not hydrogen. Preferably, E1 and E2 are alkyl, aryl, alicyclic or heterocyclic groups. 〇11 and 〇12 are the same or different and independently 0 to 100, and between 5 and 100. The polyamidamide polymer represented by the above formula 1 is prepared by reacting a diamine monomer and an acid monomer selected from the group consisting of tetracarboxylic dianhydride, dicarboxylic anhydride, dicarboxylic acid, and reactive derivatives thereof. The reaction is carried out to obtain a reaction product, and the reaction product and the terminal blocking monomer are reacted to convert the amine group of the reaction product into a mercaptoamine group. A method of preparing a polyamine polymer is described in more detail. The diamine monomer may be represented by X(NH2)2, wherein the X system is the same as 乂1 or 乂2 of Chemical Formula 1. The ruthenium and osmium of Chemical Formula 1 are derived from a diamine monomer. X can be represented by the following formulas 2 to 7, but is not limited to them. [Chemical Formula 2]

8 20 1376574 [化學式3]8 20 1376574 [Chemical Formula 3]

[化學式4][Chemical Formula 4]

5 [化學式5]5 [Chemical Formula 5]

Η匕學式6] 在上式2至7中, /,至乙^係相同或不同,且獨立地選自由氫、經取代或未 經取代之烷基、羥基、羧酸基、與硫醇所構成之群組,且 八丨至入6係相同或不同,且獨立地選自由CR3R4、S、0、 15 S02、CO、CONH、與單鍵所構成之群組,其中心與114係相 同或不同且獨立地選自由氫、或經取代或未經取代之烷基 9 1376574 所構成之群組且較佳為氟烧基。 二胺單體可包括芳族二胺、脂環二胺、與脂族二胺。 二胺單體的例子包括聯苯胺、雙(4-胺基苯氧基苯基) 砜、雙(3-胺基笨氧基笨基)颯、雙(4-胺基苯氧基)聯苯、雙 5 [4-(4-胺基苯氧基)苯基]醚、1,4-雙(4-胺基苯氧基)苯、4’- 二胺基-3,3’-二羥基聯苯、雙(3-胺基-4-羥基苯基)丙烷、雙 (4-胺基-3-羥基苯基)丙烷、雙(3-胺基-4-羥基苯基)砜、2,2-雙(4-胺基-3-羥基苯基)-1,1,1,3,3,3-六氟丙烷、3,4’-二胺基 二苯醚、4,4’-二胺基二苯醚、3,4’-二胺基二苯曱烷、4,4’-10 二胺基二苯甲烷、3,4’-二胺基二苯礙、4,4’-二胺基二苯礙、 3,4’-二胺基二苯硫醚、4,4’-二胺基二苯硫醚、對苯二胺、 間苯二胺、1,5-萘二胺、2,6-萘二胺、環己二胺、亞曱基雙 環己胺、3,3’-二胺基-4,4’-二羥基聯苯、3,3’-二胺基-4,4’-二羥基砜、4,4’-二胺基-3,3’-二羥基苯基砜、雙(3-胺基-4-15 羥基苯基)曱烷、2,2-雙-(3-胺基-4-羥基苯基)丙烷、2,2-雙-(3-胺基-4-羥基苯基)六氟丙烷、4,4’-二胺基-3,3’-二羥基二苯 甲酮、3,3’-二胺基-4,4’-二羥基二苯甲酮' 4,4’-二胺基-3,3’-二羥基二苯醚、1,4-二胺基-2,5-二羥基苯、及1,3-二胺基-2,4-二羥基苯,但不限於彼等。該等二胺單體可單獨或合併使用。 20 二胺單體可較佳選自由4,4’-二胺基二苯醚、4,4’-二胺 基二笨甲烷、2,2-雙-(3-胺基-4-羥基苯基)六氟丙烷、3,3’-二胺基-4,4’-二羥基砜、和彼等的混合物所構成之群組。 含矽二胺單體可連同該二胺單體使用》含矽二胺單體 增加相對於基材的黏著性。 10 1376574Η匕6 6 In the above formulas 2 to 7, /, to the same or different, and independently selected from hydrogen, substituted or unsubstituted alkyl, hydroxyl, carboxylic acid, and thiol The group formed, and the gossip to the 6 series are the same or different, and are independently selected from the group consisting of CR3R4, S, 0, 15 S02, CO, CONH, and a single bond, the center of which is the same as the 114 series Or different and independently selected from the group consisting of hydrogen, or a substituted or unsubstituted alkyl group 9 1376574 and preferably a fluoroalkyl group. The diamine monomer may include an aromatic diamine, an alicyclic diamine, and an aliphatic diamine. Examples of the diamine monomer include benzidine, bis(4-aminophenoxyphenyl)sulfone, bis(3-aminophenyloxy)phosphonium, bis(4-aminophenoxy)biphenyl , bis 5 [4-(4-Aminophenoxy)phenyl]ether, 1,4-bis(4-aminophenoxy)benzene, 4'-diamino-3,3'-dihydroxy Biphenyl, bis(3-amino-4-hydroxyphenyl)propane, bis(4-amino-3-hydroxyphenyl)propane, bis(3-amino-4-hydroxyphenyl)sulfone, 2, 2-bis(4-amino-3-hydroxyphenyl)-1,1,1,3,3,3-hexafluoropropane, 3,4'-diaminodiphenyl ether, 4,4'-di Aminodiphenyl ether, 3,4'-diaminodiphenyl decane, 4,4'-10 diaminodiphenylmethane, 3,4'-diaminodiphenyl, 4,4'-di Aminodiphenyl, 3,4'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide, p-phenylenediamine, m-phenylenediamine, 1,5-naphthalenediamine, 2,6-naphthalenediamine, cyclohexanediamine, fluorenylenedicyclohexylamine, 3,3'-diamino-4,4'-dihydroxybiphenyl, 3,3'-diamino-4, 4'-dihydroxy sulfone, 4,4'-diamino-3,3'-dihydroxyphenyl sulfone, bis(3-amino-4-15 hydroxyphenyl)decane, 2,2-dual- (3-amino-4-hydroxyphenyl)propane, 2,2- -(3-Amino-4-hydroxyphenyl)hexafluoropropane, 4,4'-diamino-3,3'-dihydroxybenzophenone, 3,3'-diamino-4,4 '-Dihydroxybenzophenone' 4,4'-diamino-3,3'-dihydroxydiphenyl ether, 1,4-diamino-2,5-dihydroxybenzene, and 1,3- Diamino-2,4-dihydroxybenzene, but not limited to them. These diamine monomers may be used singly or in combination. The diamine monomer may preferably be selected from the group consisting of 4,4'-diaminodiphenyl ether, 4,4'-diaminodimethane, 2,2-bis-(3-amino-4-hydroxybenzene Group of hexafluoropropane, 3,3'-diamino-4,4'-dihydroxy sulfone, and mixtures thereof. The ruthenium containing diamine monomer can be used in conjunction with the diamine monomer to increase the adhesion to the substrate. 10 1376574

-10 15-10 15

含矽二胺單體的例子包括雙(4-胺基苯基)二曱基矽 烷、雙(4-胺基苯基)四曱基矽氧烷、雙(p-胺基苯基)四曱基 二矽氧烷、雙(伽馬-胺基丙基)四曱基二矽氧烷、1,4-雙-(伽 馬-胺基丙基二甲矽基)苯、1,3-雙-(胺基丙基)四曱基二矽氧 烷、及類似者,但不限於彼等。較佳的含矽二胺單體包括 雙(4-胺基笨基)四曱基矽氧烷、雙(p-胺基苯基)四曱基二矽 氧烷、或彼等的混合物。 為增加上下層黏著性,有利的是使用含矽二胺單體對 不含矽二胺單體的比例係介於0.1與10 wt%之間的共聚 物。當含矽二胺單體份量落於該範圍内時,光學性能與層 性能不會變差且黏著性極佳。 和二胺單體反應的酸單體可選自由下列所構成之群 組:四羧酸二酐、二羧酸酐、二羧酸、及其活性衍生物。 化學式1的丫1與丫2係衍生自酸單體。 四羧酸二酐可以下式8表示,但不限於此。 [化學式8] 0 0 〇人丫人T Y 0 0 0 在上式8中,Y係和化學式1的丫1或丫2相同。 二羧酸單體可以Y(COOH)2表示,其中Y係和化學式1 的YiSYz相同。 二羧酸單體的活性衍生物可以Y(COK’)2表示,其中Y 係和化學式1的丫,或丫2相同,κ’為使Y(COOH)2和鹵化物、 11 20 1376574 或Y(COOH)2和1-羥基-1,2,3-苯并三唑反應所獲得的部分。 下式9至16可衍生自酸單體。 [化學式9]Examples of the fluorene-containing diamine monomer include bis(4-aminophenyl)dicon0-decane, bis(4-aminophenyl)tetradecyloxyne, bis(p-aminophenyl)tetraindole. Dioxazane, bis(gamma-aminopropyl)tetradecyldioxane, 1,4-bis-(gamma-aminopropyldimethylguanidinyl)benzene, 1,3-double -(Aminopropyl)tetradecyldioxane, and the like, but not limited to them. Preferred guanidine-containing diamine monomers include bis(4-aminophenyl)tetradecyloxyne, bis(p-aminophenyl)tetradecyldioxane, or mixtures thereof. In order to increase the adhesion of the upper and lower layers, it is advantageous to use a copolymer containing a nonammonium diamine monomer in a ratio of from 0.1 to 10 wt%. When the amount of the fluorene-containing diamine monomer falls within the range, the optical properties and the layer properties are not deteriorated and the adhesion is excellent. The acid monomer which is reacted with the diamine monomer may be selected from the group consisting of tetracarboxylic dianhydride, dicarboxylic anhydride, dicarboxylic acid, and reactive derivatives thereof. The oxime 1 and oxime 2 of Chemical Formula 1 are derived from an acid monomer. The tetracarboxylic dianhydride can be represented by the following formula 8, but is not limited thereto. In the above formula 8, the Y system is the same as 丫1 or 丫2 of Chemical Formula 1. The dicarboxylic acid monomer may be represented by Y(COOH)2, wherein the Y system is the same as YiSYz of Chemical Formula 1. The reactive derivative of the dicarboxylic acid monomer can be represented by Y(COK')2, wherein the Y system is the same as the oxime of Chemical Formula 1, or 丫2, and the κ' is such that Y(COOH)2 and the halide, 11 20 1376574 or Y The fraction obtained by the reaction of (COOH) 2 with 1-hydroxy-1,2,3-benzotriazole. The following formulas 9 to 16 can be derived from an acid monomer. [Chemical Formula 9]

[化學式11][Chemical Formula 11]

[化學式13][Chemical Formula 13]

Κ9 K10Κ9 K10

本 * [化學式14]Ben * [Chemical Formula 14]

12 1376574 Η匕學式15]12 1376574 dropout 15]

[化學式16][Chemical Formula 16]

5 在上式9至16中, 1至1<:21係相同或不同,且獨立地選自由氫、經取代或 未經取代之烷基、羥基、羧酸基、硫醇、與COOR5所構成 之群組,其中r5為氫或C1至C5烷基,且 81至匕係相同或不同,且獨立地選自由-CR6R7-、-S-、 10 -Ο-、-S02-、-CO- ' -CONH-、與單鍵所構成之群組,其中 R6與R7係相同或不同且獨立地選自由氫與經取代或未經取 代之烧基所構成之群組。經取代之烧基較佳為氟烧基,而 未經取代之烧基較佳為曱基。 酸單體可為四羧酸二酐,例如苯均四酸二酐、3,3’,4,4’-15 聯苯四羧酸二酐、2,3,3’,4-聯苯四羧酸二酐、3,3’,4,4’-二苯 曱酮四羧酸二酐、雙(3,4-二羧苯基)砜二酐、1,1-雙-(2,3-二 羧苯基)乙二酐、雙(3,4-二羧苯基)醚二酐、及類似物。酸單 體可為二羧酸活性衍生物,例如羰基鹵化物衍生物以及使 酸單體和1-羥基-1,2,3-苯并三唑反應獲得的活性酯衍生 20 物。活性衍生物的特定例子包括4,4-氧基二苯甲醯氣、鄰苯 13 1376574 二曱醯氣、二苯氧基二曱醯氣、雙(苯基曱醯氯)砜、雙(苯 基曱醯氣)醚、雙(苯基甲醯氣)苯甲酮、鄰苯二曱醯氣、二 苯氧基苯并三唑二曱醋、及類似物。 較佳酸單體包括3,3’,4,4’-二苯甲酮四羧酸二酐、雙 5 (3,4-二羧苯基)醚二酐、二苯氧基二曱醯氣、鄰苯二甲醯 氣、及類似物,但不限於彼等。 以化學式1表示的聚醯胺聚合物可為共聚物,其中二或 多個單體係以不損害由醯胺鍵單元所構成之均聚物或聚合 物的光性能、層性能、與水溶性的範圍共聚。該共聚物可 10 包括各種型式,舉施來說,無規共聚物、嵌段共聚物、或 接枝共聚物,但在一具體例中,其包括無規共聚物。 此外,和由酸單體與二胺單體反應獲得的反應產物反 應的封端單體可包括選自由單羧酸及其活性衍生物所構成 之群組的化合物。 15 單羧酸可為任何羧酸,尤其是脂環單羧酸,例如環己 基曱酸、降冰片烷曱酸、金剛烷基曱酸、異冰片基甲酸、 及降冰片烯基甲酸、或其活性衍生物。單羧酸可單獨或合 併使用。 羧酸的活性衍生物包括環己基曱醯氣、降莰烷曱醯 20 氯、降冰片烯甲醯氯、金剛烷基甲醯氯、異冰片基甲醯氯、 4-降冰片烯苯曱醯氣、環己基苯并三唑曱酯、降冰片烯苯 并三。坐曱酯、及類似物。 聚醯胺聚合物的分子量可在不損害本發明優點的範圍 内選擇,但在一具體例中,重量平均分子量(Mw)係介於 14 1376574 500至500,000,在另一具體例中,其介於1000至50,000, 以確保有效溶解度與塗覆特性及使圖案化後的圖案形成 效果最大化。當重量平均分子量落於該範圍内時,有可 能提供有機溶劑足夠的物理特性與絕佳溶解度,使得便 5 於操作。 fBl酯化重氮醌化合物 酯化重氮醌化合物係作用為光活化合物(PAC),較佳包 括1,2-重氮苯醌或1,2-重氮萘醌結構。該等化合物係說明於 美國專利2,772,975號、2,797,213號、與3,669,658號。酯化 -10 重氮醌化合物可包括以下式17至19表示的化合物,但不限 於彼等。 [化學式17]5 In the above formulas 9 to 16, 1 to 1 <:21 are the same or different, and are independently selected from hydrogen, substituted or unsubstituted alkyl group, hydroxyl group, carboxylic acid group, mercaptan, and COOR5. a group wherein r5 is hydrogen or a C1 to C5 alkyl group, and 81 to the lanthanide are the same or different, and are independently selected from -CR6R7-, -S-, 10-Ο-, -S02-, -CO- ' a group consisting of -CONH-, and a single bond, wherein R6 and R7 are the same or different and are independently selected from the group consisting of hydrogen and substituted or unsubstituted alkyl. The substituted alkyl group is preferably a fluoroalkyl group, and the unsubstituted alkyl group is preferably a fluorenyl group. The acid monomer may be a tetracarboxylic dianhydride such as pyromellitic dianhydride, 3,3',4,4'-15 biphenyltetracarboxylic dianhydride, 2,3,3',4-biphenyltetra Carboxylic dianhydride, 3,3',4,4'-dibenzophenone tetracarboxylic dianhydride, bis(3,4-dicarboxyphenyl)sulfone dianhydride, 1,1-bis-(2,3 -Dicarboxyphenyl)ethane dianhydride, bis(3,4-dicarboxyphenyl)ether dianhydride, and the like. The acid monomer may be a dicarboxylic acid reactive derivative such as a carbonyl halide derivative and an active ester derivative obtained by reacting an acid monomer with 1-hydroxy-1,2,3-benzotriazole. Specific examples of the reactive derivative include 4,4-oxybenzophenone gas, o-benzene 13 1376574 dioxane, diphenoxy difluorene gas, bis(phenylphosphonium chloride)sulfone, bis(benzene) Base helium) ether, bis(phenylformamidine)benzophenone, phthalic acid, diphenoxybenzotriazole diacetic acid vinegar, and the like. Preferred acid monomers include 3,3',4,4'-benzophenone tetracarboxylic dianhydride, bis 5 (3,4-dicarboxyphenyl) ether dianhydride, diphenoxy dioxime , phthalic acid, and the like, but not limited to them. The polyamidamide polymer represented by Chemical Formula 1 may be a copolymer in which two or more single systems are used to impair the light properties, layer properties, and water solubility of a homopolymer or polymer composed of a guanamine bond unit. The range of copolymerization. The copolymer may include various types, such as random copolymers, block copolymers, or graft copolymers, but in a specific example, it includes a random copolymer. Further, the blocked monomer which reacts with the reaction product obtained by reacting the acid monomer with the diamine monomer may include a compound selected from the group consisting of monocarboxylic acids and reactive derivatives thereof. The monocarboxylic acid may be any carboxylic acid, especially an alicyclic monocarboxylic acid such as cyclohexyl decanoic acid, norbornane citric acid, adamantyl citric acid, isobornyl formic acid, and norbornene based acid, or Active derivative. The monocarboxylic acids can be used singly or in combination. The reactive derivatives of carboxylic acids include cyclohexyl helium, norbornane 20 chlorine, norbornene formazan chloride, adamantylmethyl chloride, isobornyl formazan chloride, 4-norbornene benzoquinone Gas, cyclohexylbenzotriazol ester, norbornene benzotriene. Sitting on oxime esters, and the like. The molecular weight of the polyamine polymer can be selected within a range that does not impair the advantages of the present invention, but in a specific example, the weight average molecular weight (Mw) is between 14 1376574 500 and 500,000, and in another specific example, It is from 1000 to 50,000 to ensure effective solubility and coating characteristics and to maximize the patterning effect after patterning. When the weight average molecular weight falls within this range, it is possible to provide sufficient physical properties and excellent solubility of the organic solvent to make it easy to handle. fBl esterified diazonium compound The esterified diazonium compound acts as a photoactive compound (PAC), preferably comprising a 1,2-diazonium benzoquinone or a 1,2-diazonaphthoquinone structure. Such compounds are described in U.S. Patent Nos. 2,772,975, 2,797,213, and 3,669,658. The esterified -10 diazonium compound may include the compounds represented by the following formulas 17 to 19, but is not limited thereto. [Chemical Formula 17]

[化學式18][Chemical Formula 18]

15 1376574 [化學式18-1] 〇15 1376574 [Chemical Formula 18-1] 〇

S〇2S〇2

5 [化學式19]5 [Chemical Formula 19]

在上式17至19中,In the above formulas 17 to 19,

0|至04係相同或不同,且獨立地選自由氫與經取代或 未經取代之烷基所構成之群組,該烷基較佳為甲基, 10 …至叫係相同或不同,且獨立地為介於1至3之整數, m3為0至3之整數, 0,至09係相同或不同,且獨立地為OQ,且 Q為氫、或以上式18-1或18-2表示。Q為氫的比例,亦 即,芳環中的OH取代比例係介於0至90mol%,較佳30至 15 80mol%。在該範圍内,可提供適宜光敏性與適宜光吸收 度,以有利地形成圖案。 16 13765740| to 04 are the same or different and are independently selected from the group consisting of hydrogen and a substituted or unsubstituted alkyl group, preferably an alkyl group, 10 ... to the same or different, and Independently an integer between 1 and 3, m3 is an integer from 0 to 3, 0, to 09 are the same or different, and are independently OQ, and Q is hydrogen, or the above formula 18-1 or 18-2 . Q is a ratio of hydrogen, that is, the ratio of OH substitution in the aromatic ring is from 0 to 90 mol%, preferably from 30 to 15 80 mol%. Within this range, suitable photosensitivity and suitable light absorbance can be provided to advantageously form a pattern. 16 1376574

根據一具體例,酯化重氮醌化合物可以以100重量份聚 醯胺聚合物計之1至50重量份被包括,在另一具體例中,其 介於5至30重量份。當酯化重氮醌化合物份量落於該範圍内 時,曝光無殘留物,合宜地形成圖案,並有可能避免顯影 期間的膜厚度損耗及提供良好圖案。 (C)含酚基化合物 含酚基化合物係作用為溶解抑制劑,以控制曝光部分 與未曝光部分的溶解率差異。 含酚基化合物包括了 2,6-二甲氧基甲基-4-t-丁酚、2,6-二甲氧基甲基-P-甲酚、或2,6-二乙氧基曱基-P-甲酚,但不 限於彼等。 含酚基化合物可以下式20至25表示,但不限於彼等。 [化學式20]According to a specific example, the esterified diazonium compound may be included in an amount of from 1 to 50 parts by weight based on 100 parts by weight of the polyamide polymer, and in another specific example, from 5 to 30 parts by weight. When the amount of the esterified diazonium compound falls within the range, no residue is exposed, a pattern is suitably formed, and it is possible to avoid film thickness loss during development and to provide a good pattern. (C) Phenolic group-containing compound The phenol group-containing compound acts as a dissolution inhibitor to control the difference in dissolution rate between the exposed portion and the unexposed portion. The phenol-containing compound includes 2,6-dimethoxymethyl-4-t-butanol, 2,6-dimethoxymethyl-P-cresol, or 2,6-diethoxyanthracene. Base-P-cresol, but not limited to them. The phenol group-containing compound can be represented by the following formulas 20 to 25, but is not limited thereto. [Chemical Formula 20]

在上式20中,R8至R10係相同或不同,且獨立地為氫、 或經取代或未經取代之烷基,In the above formula 20, R8 to R10 are the same or different and are independently hydrogen, or a substituted or unsubstituted alkyl group,

Rn至Rl5係相同或不同,且獨立地選自由Η、OH、與 經取代或未經取代之烷基所構成之群組,該烷基較佳為 CH3,且 n10為1至5之整數。 17 1376574 [化學式21] (Rl6)mi (Rl9)nuRn to Rl5 are the same or different and are independently selected from the group consisting of hydrazine, OH, and a substituted or unsubstituted alkyl group, preferably an alkyl group, and n10 is an integer of from 1 to 5. 17 1376574 [Rl6)mi (Rl9) nu

在上式21中, R16至R2i係相同或不同,且獨立地選自由Η、OH、與 經取代或未經取代之烷基所構成之群組, A4為CR’R”或單鍵,其中R’與R”係相同或不同,且 獨立地為氫、或經取代或未經取代之烷基,該烷基較佳 為CH3 ’且 10 ni l+n!2+ni3與Πΐ4+Πΐ5+Πΐ6係相同或不同’且獨立地為5 或更小的整數。 [化學式22] (〇Η)π,7 (〇Η)ηιβIn the above formula 21, R16 to R2i are the same or different and are independently selected from the group consisting of hydrazine, OH, and a substituted or unsubstituted alkyl group, and A4 is a CR'R" or a single bond, wherein R' and R" are the same or different and are independently hydrogen, or a substituted or unsubstituted alkyl group, and the alkyl group is preferably CH3' and 10 ni l+n!2+ni3 and Πΐ4+Πΐ5+ Πΐ6 is the same or different 'and independently 5 or less integers. [〇Η22] (〇Η)π,7 (〇Η)ηιβ

(Μη2ι 在上式22中, R22至R24係相同或不同,且獨立地為氫、或經取代或未 經取代之烷基, n17、n18、與n21係相同或不同,且獨立地為1至5之整數, n19與n20係相同或不同,且獨立地為0至4之整數。 1376574 [化學式23](Μη2ι In the above formula 22, R22 to R24 are the same or different, and are independently hydrogen, or a substituted or unsubstituted alkyl group, n17, n18, which are the same or different from the n21 system, and independently 1 to An integer of 5, n19 and n20 are the same or different, and are independently an integer from 0 to 4. 1376574 [Chemical Formula 23]

尔彳日丨0J攻个尔彳日丨0J attack

立地選自由氫、〇HSite selected from hydrogen, 〇H

此词立地選自, 經取代或未經取代之烷基所構 群組,且 η22至h係相同或不同,且想— 地為為1至4之整數,葡 提是n22+n24與n23+n26獨立地為5或更小的敕數 [化學式24]The term is selected from the group consisting of substituted or unsubstituted alkyl groups, and η22 to h are the same or different, and are intended to be an integer from 1 to 4, and the extract is n22+n24 and n23+ N26 is independently 5 or less [Chemical Formula 24]

(〇H)n (Ra^ 在上式24中 R28為經取代或未經取代之烷基,較佳為CH3, R·29至尺^係相同或不同’且獨立地為氫、或經取代或未 經取代之烷基, nr、叱9、與係相同或不同’且獨立地為1至5之整數,且 n28、ho、與Π32係相同或不同’且獨立地為0至4之整數, 前提是η27+η28、吻+⑽、與叫+〜2獨立地為5或更小的 整數。 15 1376574 [化學式25](〇H)n (Ra^ In the above formula 24, R28 is a substituted or unsubstituted alkyl group, preferably CH3, R·29 to the same or different ', and independently hydrogen or substituted Or unsubstituted alkyl, nr, 叱9, the same or different 'and is independently an integer from 1 to 5, and n28, ho, and Π32 are the same or different' and are independently an integer from 0 to 4. , provided that η27+η28, kiss+(10), and called +~2 are independently an integer of 5 or less. 15 1376574 [Chemical Formula 25]

在上式25中, R32、R33、與R34係相同或不同,且獨立地為經取代或 5 未經取代之烷基,較佳為CH3, R35至R38係相同或不同,且獨立地為氫、或經取代或未 經取代之烷基,In the above formula 25, R32, R33, and R34 are the same or different and are independently a substituted or 5 unsubstituted alkyl group, preferably CH3, and R35 to R38 are the same or different and independently hydrogen. Or substituted or unsubstituted alkyl group,

n33、n35、與n39係相同或不同,且獨立地為1至5之整數, n34、n36、與n38係相同或不同,且獨立地為0至4之整數,且 10 n37為1至4之整數, 前提是n33 + n34、n35+n36、與n38+n39獨立地為5或更小的 整數。 根據一具體例,含酚基化合物係以以100重量份聚醯胺 聚合物計之0.1至30重量份被包括。當含酚基化合物份量落 15 於該範圍内時,敏感性不會在顯影期間變差,並適宜地增 加未曝光部分的溶解率以提供良好圖案。此外,冷凍時不 會沉澱,展現了絕佳的儲存安定性。 (D)溶劑 20 1376574 5 /分劑可為有機溶劑,較佳為ν·甲基_2_。比洛炫嗣伽馬· 丁内S曰ν,ν—甲基乙酸自旨、二甲亞礙、二乙二醇二甲_、 -乙一醇一乙醚、乳酸甲酯、乳酸乙酯、甲基-1,3-丁二醇 乙酸酯、1,3-丁二酸q s %-3-早甲醚、二乙二醇二丁醚、丙二醇 單甲謎—丙—醇單甲鍵、丙二醇單甲謎乙酸醋、乳酸甲 西曰乳酸乙西曰、乳酸丁酯、丙酮酸曱酯、丙酮酸乙酯、甲 基-3-甲氧基丙酸自旨、及類似物,但不限於彼等。溶劑可單 獨或合併使用。 • 洛劑與聚醯胺聚合物可以2〇:8〇至9〇: 1〇之重量比例使 -10 用。在該範圍内,可得到足夠厚的膜並可提供良好溶解度 與塗層。 15 根據另一具體例,提供了一種使用該正型光敏性樹脂 組成物製造光敏性圖案的方法。 使用本發明之正型光敏性樹脂組成物製造光敏性圖案 的方法係包括:將上述正型光敏性樹脂組成物塗在支撐基 • 材上並使其乾燥成樹脂組成物層;使該樹脂組成物層曝 光;以鹼性顯影溶液使經曝光樹脂組成物層顯影;並加熱 經顯影樹脂組成物層。 20 第1圖係展示使用正型光敏性樹脂組成物製造圖案的 製程圖。此後,該方法係參照第i圖更詳細地說明。 如第1圖所示,欲操作物件丨,例如半導體基材,係塗 有光敏性樹脂組成物,以提供光敏性樹脂組成物層2 (S1)。 然後,使光敏性樹脂組成物層曝光(S2),樹脂組成物產 生化學變化’曝光部分的溶解率增加。隨後’以鹼性溶液 21 1376574 顯影(S3),以提供圖案。 在曝光製程(S2)期間,當使用光罩(未顯示)照射i線或 類似者之UV光使光敏性樹脂組成物層2曝光時,曝光部分3 的光敏性試劑產生化學變化,但未曝光部分4並無產生化學 5變化。在接著的製程期間,當以鹼性水溶液使經曝光光敏 性樹脂組成物層顯影(S3)時,已化學變化的曝光部分3被移 除’ k供了形成圖案的光敏性樹脂組成物層5。 當加熱形成有圖案的光敏性樹脂組成物層時,樹脂組 成物的圖案層被固化,提供了光敏性樹脂組成物層6。 10 根據本發明另一具體例,提供了 —種半導體電子構 件,其包括使用正型光敏性樹脂組成物獲得的光敏性樹脂 層。光敏性樹脂層6可應用至表面保護層或層間絕緣層。此 外,可廣泛應用至需要具高敏感性與高解析度之正型圖案 的各種領域。 15 下列實施例更詳細地例示本發明。然而,可理解到本 發明不限於該等實施例。 <合_成實施例1> :合成聚醯胺聚合物 在氮流動的同時,將18.3g2,2-雙-(3-胺基-4-羥苯基)六 氟丙院加至配有授掉、溫控裝置、氮氣注入器與冷凝器 20 的四頸燒瓶中,並將280g N-甲基-2-°比略烧_(NMP)置入且 溶解。 待固體完全溶解,將9.9g吡啶置入該溶液。在溶液溫 度維持於5°C的同時,將14.8g 4,4’-氧基二笨甲醯氣溶於 I42g N-甲基-2-°比各烧酮(NMP),以提供一溶液。以三十分 22 1376574 鐘將該溶液慢慢滴入其中。滴入後的一小時,反應於5°C進 行,然後使溫度升至室溫,並搖動一小時。之後,置入1.5g 環己基甲醯氯並搖動一小時以完成反應。 將反應混合物置入水/曱醇= 10/1(體積比)溶液,以生成 5 沉澱物。將該沉澱物過濾、以水充分清洗、然後於80°C乾 燥24小時或更久,以合成以下列化學式1-1表示的聚醯胺聚 合物。從所合成聚合物的GPC結果,確認重量平均分子量 為 11K。 (化學式1-1)N33, n35, and n39 are the same or different, and are independently an integer of 1 to 5, n34, n36, and n38 are the same or different, and are independently an integer of 0 to 4, and 10 n37 is 1 to 4 An integer, provided that n33 + n34, n35+n36, and n38+n39 are independently an integer of 5 or less. According to a specific example, the phenol group-containing compound is included in an amount of 0.1 to 30 parts by weight based on 100 parts by weight of the polyamidamide polymer. When the proportion of the phenol-based compound falls within the range, the sensitivity does not deteriorate during development, and the dissolution rate of the unexposed portion is suitably increased to provide a good pattern. In addition, it does not precipitate when frozen, demonstrating excellent storage stability. (D) Solvent 20 1376574 5 / The agent may be an organic solvent, preferably ν·methyl_2_.毕洛炫 嗣 嗣 嗣 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , -1,3-butanediol acetate, 1,3-succinic acid qs%-3- early methyl ether, diethylene glycol dibutyl ether, propylene glycol monomethyl mystery-propanol monomethyl bond, propylene glycol single Acrylic vinegar, methacetin, butyl citrate, butyl lactate, decyl pyruvate, ethyl pyruvate, methyl-3-methoxypropionic acid, and the like, but not limited to them. Solvents may be used singly or in combination. • The agent and the polyamide polymer can be used in a ratio of 2〇:8〇 to 9〇: 1〇 by weight. Within this range, a sufficiently thick film can be obtained and a good solubility and coating can be provided. According to another specific example, there is provided a method of producing a photosensitive pattern using the positive photosensitive resin composition. The method for producing a photosensitive pattern using the positive photosensitive resin composition of the present invention comprises: applying the above positive photosensitive resin composition onto a support substrate and drying it into a resin composition layer; The layer is exposed; the exposed resin composition layer is developed with an alkali developing solution; and the developed resin composition layer is heated. 20 Fig. 1 is a process diagram for producing a pattern using a positive photosensitive resin composition. Thereafter, the method is explained in more detail with reference to Figure i. As shown in Fig. 1, an object to be manipulated, for example, a semiconductor substrate, is coated with a photosensitive resin composition to provide a photosensitive resin composition layer 2 (S1). Then, the photosensitive resin composition layer is exposed (S2), and the resin composition produces a chemical change, and the dissolution rate of the exposed portion increases. It is then developed (S3) with an alkaline solution 21 1376574 to provide a pattern. During the exposure process (S2), when a photosensitive resin composition layer 2 is exposed by irradiating an i-ray or the like with UV light (not shown), the photosensitive agent of the exposed portion 3 undergoes a chemical change, but is not exposed. Part 4 did not produce a chemical change. During the subsequent process, when the exposed photosensitive resin composition layer is developed with an alkaline aqueous solution (S3), the chemically changed exposed portion 3 is removed 'k for patterning the photosensitive resin composition layer 5 . When the patterned photosensitive resin composition layer is heated, the pattern layer of the resin composition is cured to provide the photosensitive resin composition layer 6. According to another embodiment of the present invention, there is provided a semiconductor electronic member comprising a photosensitive resin layer obtained using a positive photosensitive resin composition. The photosensitive resin layer 6 can be applied to a surface protective layer or an interlayer insulating layer. In addition, it can be widely applied to various fields requiring a positive pattern with high sensitivity and high resolution. The following examples illustrate the invention in more detail. However, it is to be understood that the invention is not limited to the embodiments. <Combination_Example 1>: Synthesis of polyamine polymer While adding nitrogen, 18.3 g of 2,2-bis-(3-amino-4-hydroxyphenyl)hexafluoropropene was added thereto. A four-necked flask of the temperature control device, the nitrogen gas injector and the condenser 20 was dispensed, and 280 g of N-methyl-2-° ratio slightly burned-(NMP) was placed and dissolved. After the solid was completely dissolved, 9.9 g of pyridine was placed in the solution. While the temperature of the solution was maintained at 5 ° C, 14.8 g of 4,4'-oxydibenzocarbazone was dissolved in I42 g of N-methyl-2-° ratio of each ketone (NMP) to provide a solution. The solution was slowly dropped into it at thirty-one 22 1376574. One hour after the dropwise addition, the reaction was carried out at 5 ° C, then the temperature was raised to room temperature and shaken for one hour. Thereafter, 1.5 g of cyclohexylformamidine chloride was placed and shaken for one hour to complete the reaction. The reaction mixture was placed in a water/sterol = 10/1 (volume ratio) solution to form a 5 precipitate. The precipitate was filtered, washed thoroughly with water, and then dried at 80 ° C for 24 hours or longer to synthesize a polyamine polymer represented by the following Chemical Formula 1-1. From the GPC results of the synthesized polymer, it was confirmed that the weight average molecular weight was 11K. (Chemical Formula 1-1)

10 <合成實施例2> :合成聚醯胺聚合物 除以1.5g降莰烷甲醯氣代替1.5g環己基甲醯氣外,以下 列化學式1-2表示的聚醯胺聚合物係根據和合成實施例1相 同的流程合成。該聚合物的重量平均分子量(Mw)為10K。 15 (化學式1-2)10 <Synthesis Example 2>: Synthesis of polyamine polymer In addition to 1.5 g of norbornane methyl hydrazine instead of 1.5 g of cyclohexylmethane gas, the polyamine polymer represented by the following chemical formula 1-2 is based on The same procedure as in Synthesis Example 1 was carried out. The polymer had a weight average molecular weight (Mw) of 10K. 15 (Chemical Formula 1-2)

<合成實施例3> :合成聚醯胺聚合物 在氮流動的同時,將17.4g 2,2-雙-(3-胺基-4-羥基苯基) 六氟丙烷與〇.86g 1,3-雙-(胺基丙基)四甲基二矽氧烷加至配 23 1376574 有攪拌器、溫控裝置、氮氣注入器與冷凝器的四頸燒瓶中, 並將280gN-曱基-2-吡咯烷酮(NMP)置入且溶解。 待固體完全溶解,將9.9g吡啶引進該溶液,並將13.3g 4,4’-氧基二苯曱醯氯引進且溶於142g N-曱基-2-吡咯烷酮 5 (NMP)的溶液以三十分鐘慢慢滴入,同時使溶液溫度維持 於0至°(:。滴完後,於溫度5°C反應一小時,待溫度升至室 溫後,使反應進行一小時。將1.5 g環己基曱醯氣引進並於 室溫搖動兩小時,然後反應完成。 將反應混合物置入水/甲醇= 10/1(體積比)溶液,以生成 10 沉澱物。然後將該沉澱物過濾、充分清洗、並於80°c真空 中乾燥24小時或更久,以合成以下列化學式1-3表示的聚醯 胺聚合物。該聚合物具有11K之重量平均分子量。 (化學式1-3)<Synthesis Example 3>: Synthetic polyamine polymer 17.7 g of 2,2-bis-(3-amino-4-hydroxyphenyl)hexafluoropropane and 〇.86 g 1, while flowing nitrogen 3-bis-(aminopropyl)tetramethyldioxane was added to a four-necked flask equipped with a stirrer, a temperature control device, a nitrogen gas injector and a condenser, and 280 g of N-mercapto-2 was added. Pyrrolidone (NMP) is placed and dissolved. After the solid was completely dissolved, 9.9 g of pyridine was introduced into the solution, and 13.3 g of 4,4'-oxydiphenylfluorene chloride was introduced and dissolved in a solution of 142 g of N-mercapto-2-pyrrolidone 5 (NMP) to three. Slowly drip in for ten minutes while maintaining the temperature of the solution at 0 to ° (:. After the completion of the dropwise addition, the reaction was carried out at a temperature of 5 ° C for one hour, and after the temperature was raised to room temperature, the reaction was allowed to proceed for one hour. 1.5 g of the ring was placed. Hexyl helium was introduced and shaken at room temperature for two hours, and then the reaction was completed. The reaction mixture was placed in a water/methanol = 10/1 (volume ratio) solution to form a 10 precipitate. The precipitate was then filtered and thoroughly washed. And drying in a vacuum at 80 ° C for 24 hours or more to synthesize a polyamide polymer represented by the following Chemical Formula 1-3. The polymer has a weight average molecular weight of 11 K. (Chemical Formula 1-3)

除以1.5g降莰烷曱醯氣代替1.5g環己基甲醯氣外,以下 列化學式1-4表示的聚醯胺聚合物係根據和合成實施例3相 同的流程合成。該聚合物具有10K之重量平均分子量。 (化學式1-4)The polyamine polymer represented by the following Chemical Formulas 1-4 was synthesized according to the same procedure as in Synthesis Example 3 except that 1.5 g of norbornane helium gas was used instead of 1.5 g of cyclohexylcarbazide. The polymer has a weight average molecular weight of 10K. (Chemical Formula 1-4)

<合成實施例5> :合成聚醯胺聚合物 在氮流動的同時,將18.3 g 2,2-雙-(3-胺基-4-羥基苯基) 24 1376574 六氟丙烷加至配有攪拌器、溫控器'氮氣注入器與冷凝器 的四頸燒瓶中,並將280gN-曱基-2-吡咯烷酮(NMP)置入且 溶解。 待固體完全溶解,將9.9g吡啶引進該溶液,並將11.8g 5 4,4’-氧基二苯甲醯氯引進且溶於142g N-曱基-2-吡咯烷酮 (NMP)的溶液以30分鐘慢慢滴入所得溶液中,同時使溫度 維持於5°C。滴完後,於溫度5°C反應一小時並加熱至室溫。 搖動一小時後,將1.5 g環己基甲醯氣引進並搖動一小時, 然後反應完成。 -10 將反應混合物置入水/甲醇= 10/1(體積比)溶液,以生成 . 沉澱物。然後將該沉澱物過濾、充分清洗、並於80°C真空 中乾燥24小時或更久,以合成以下列化學式1-5表示的聚醯 胺聚合物。該聚合物具有11K之重量平均分子量。 (化學式1-5)<Synthesis Example 5>: Synthesis of polyamine polymer While adding nitrogen, 18.3 g of 2,2-bis-(3-amino-4-hydroxyphenyl) 24 1376574 hexafluoropropane was added thereto. A four-necked flask of a stirrer, a thermostat 'nitrogen injector and a condenser, and 280 g of N-mercapto-2-pyrrolidone (NMP) was placed and dissolved. After the solid was completely dissolved, 9.9 g of pyridine was introduced into the solution, and 11.8 g of 5 4,4'-oxybenzhydryl chloride was introduced and dissolved in a solution of 142 g of N-mercapto-2-pyrrolidone (NMP) to 30. The solution was slowly dropped into the solution while maintaining the temperature at 5 °C. After the completion of the dropwise addition, the mixture was reacted at a temperature of 5 ° C for one hour and heated to room temperature. After shaking for one hour, 1.5 g of cyclohexylmethylguanidine was introduced and shaken for one hour, and then the reaction was completed. -10 The reaction mixture was placed in a water/methanol = 10/1 (volume ratio) solution to form a precipitate. The precipitate was then filtered, washed thoroughly, and dried in vacuum at 80 ° C for 24 hours or longer to synthesize a polyamine polymer represented by the following Chemical Formula 1-5. The polymer has a weight average molecular weight of 11K. (Chemical Formula 1-5)

<合成實施例6> :合成聚醯胺聚合物 除以1.5g降莰烷甲醯氣代替1.5g環己基甲醯氣外,以下 列化學式1-6表示的聚醯胺聚合物係根據和合成實施例5相 同的流程合成。該聚合物具有10K之重量平均分子量。 20 (化學式1-6)<Synthesis Example 6>: Synthesis of polyamine polymer In addition to 1.5 g of norbornanemethyl hydrazine gas instead of 1.5 g of cyclohexylmethane gas, the polyamine polymer represented by the following Chemical Formula 1-6 is based on Synthesis Example 5 was synthesized in the same manner. The polymer has a weight average molecular weight of 10K. 20 (Chemical Formula 1-6)

25 除以1.5g馬來酸酐代替1.5g環己基甲醯氣外,以下列化 學式1-7表示的聚醯胺聚合物係根據和合成實施例1相同的 流程合成。該聚合物具有10K之重量平均分子量》 (化學式1-7)25 Polyamide polymer represented by the following Chemical Formula 1-7 was synthesized by the same procedure as in Synthesis Example 1, except that 1.5 g of maleic anhydride was used instead of 1.5 g of cyclohexylcarbazide. The polymer has a weight average molecular weight of 10K" (Chemical Formula 1-7)

<合成竇施例8> :合成聚醯胺聚合物 除以1.5g 5-降冰片烯-2,3-曱酸酐代替1.5g環己基甲醯氣 外,以下列化學式1-8表示的聚醯胺聚合物係根據和合成實施 例1相同的流程合成。該聚合物具有11K之重量平均分子量。 (化學式1-8)<Synthetic sinus application 8>: Synthesis of polyamine polymer divided by 1.5 g of 5-norbornene-2,3-phthalic anhydride instead of 1.5 g of cyclohexylmethane gas, the polymerization represented by the following chemical formula 1-8 The guanamine polymer was synthesized according to the same procedure as in Synthesis Example 1. The polymer has a weight average molecular weight of 11K. (Chemical Formula 1-8)

S實施例1至12> :合成光敏性榭脂组忐物 以下表1所示之組成比例將合成實施例1至8合成的各 別聚醯胺聚合物和酯化重氮醌化合物、含酚化合物2,6-二乙 氧基甲基-P-甲酚、及溶劑γ-丁内酯(GBL)混合,以提供正型 光敏性樹脂組成物。 表1中的“26a”意指化學式26的(^至仏其中兩個係以化 學式26-1表示且其餘一個是氫的化合物;而“26b”意指化學 式26的(^至仏其中兩個係以化學式26-2表示且其餘一個是 氫的化合物。 1376574 [化學式26] 0S Examples 1 to 12>: Synthesis of photosensitive blush group mash The composition ratios shown in Table 1 below will synthesize the respective polyamine polymers and esterified diazonium compounds synthesized in Examples 1 to 8, containing phenol The compound 2,6-diethoxymethyl-P-cresol and the solvent γ-butyrolactone (GBL) were mixed to provide a positive photosensitive resin composition. "26a" in Table 1 means a compound of Chemical Formula 26, wherein two of them are represented by Chemical Formula 26-1 and the other one is hydrogen; and "26b" means Chemical Formula 26 (^ to 仏 two of them) A compound represented by Chemical Formula 26-2 and the other one being hydrogen. 1376574 [Chemical Formula 26] 0

5 [化學式26-2] 〇5 [Chemical Formula 26-2] 〇

表1 實施例 聚醯胺 故合物 S旨化重氮酿 化合物 2,6-二乙氧基 曱基-P-曱紛 溶劑(GBL) 1 10 g,合成 實施例1 26a , 2 g Ig 20 g 2 10 g,合成 實施例1 26b , 2 g Ig 20 g 3 10 g,合成 實施例2 26a > 2 g ig 20 g 4 10 g,合成 實施例2 26b , 2 g ig 20 g 5 10 g,合成 實施例3 26a 5 2 g ig 20 g 6 10 g,合成 實施例3 26b , 2 g Ig 20 g 27 一' -- 7 ιυ g,合成 實ίΜ糾4 26a « 2 g !g 20 g 8 ,合成 實施体丨4 26b , 2 g 20 g 9 ,合成 實施例5 26a , 2 g ig 20 g 10 ,合成 實施你 26b , 2 g !g 20 g 11 ,合成~Ί 實施例6 26a 5 2 g lg 20 g 12 10-g ’合成 +實施你1A 26b * 2 g !g 20 g 丄合成糸敏性樹脂組成铷 以下表2所示之組成比例將從合成實施例7與8得到的 各別聚醯胺聚合物和酯化重氮醌化合物、含酚化合物、及 ’合片丨以提供光敏性樹脂組成物。下表2所示之酯化重氮醌 化合物係和表1所定義者相同。 表2 實施例 眾醞胺 _聚合物 酯化重氮醌 化合斗勿 2,6-二乙氧基 甲基-p-甲齡· 溶劑(GBL) 1 Wg ’合成 實施例7 26a,2 g !g 20 g 2 ,合成 實施例7 26b * 2 g 2g 20 g 3 I0_g,合成 _實施例8 26a,2 g !g lg 4 川g ’合成 實施例8 26b ' 2 g !g ig 例13至24> :柃,通 使從實施例1至12得到的各別光敏性樹脂組成物接受 微影測試,結果係設為實施例13至24並顯示於表3。 將從實施例1至12得到的各別正型光敏性樹脂組成物 塗在矽晶圓上並於125°C預烤120秒。 以NikonilOc i-線步進機一其為曝光設備一使塗有光敏 性樹脂組成物的碎晶圓曝光,並以2.38 wt%四甲基氫氧化 銨(TMAH)水溶液顯影兩分鐘。在蒸餾水中浸洗一分鐘,使 28 1376574 用FE-SEM測量以測定CD (關鍵尺寸)。 又,敏感性係測定為最佳曝光時間,其係藉由計算在 曝光顯影後以1比1線寬形成10 μπι L/S圖案所需的曝光時 間。解析度係測定為在該最佳曝光時間的最小圖案尺寸。 5 形成圖案後,在氮氣氛中以150°C加熱30分鐘,使溫度 升至350°C —小時,以提供固化膜。 表3 曝光能量(mJ/cm2) 解析度(μηι) 實施例13 400 3 實施例14 300 3 實施例15 370 3 實施例16 280 3 實施例17 440 3 實施例18 350 3 實施例19 420 3 實施例20 330 3 實施例21 380 2 實施例22 300 3 實施例23 480 3 實施例24 290 3Table 1 Example Polyamine Compound S Sodium Dihydrogen Brewing Compound 2,6-Diethoxymethyl-P-indole Solvent (GBL) 1 10 g, Synthesis Example 1 26a, 2 g Ig 20 g 2 10 g, Synthesis Example 1 26b, 2 g Ig 20 g 3 10 g, Synthesis Example 2 26a > 2 g ig 20 g 4 10 g, Synthesis Example 2 26b, 2 g ig 20 g 5 10 g Synthesis Example 3 26a 5 2 g ig 20 g 6 10 g, Synthesis Example 3 26b, 2 g Ig 20 g 27 A ' -- 7 ιυ g, synthetic Μ Μ 4 4 26a « 2 g !g 20 g 8 , Synthesis of 丨4 26b , 2 g 20 g 9 , Synthesis Example 5 26a , 2 g ig 20 g 10 , Synthesis of your 26b, 2 g !g 20 g 11 , Synthesis ~ 实施 Example 6 26a 5 2 g Lg 20 g 12 10-g 'Synthesis+Implementation 1A 26b * 2 g !g 20 g 丄Synthesis of sensitizing resin composition 组成The composition ratios shown in Table 2 below will be obtained from the respective synthesis examples 7 and 8. The guanamine polymer and the esterified diazonium compound, the phenol-containing compound, and the conjugated oxime to provide a photosensitive resin composition. The esterified diazonium compound shown in Table 2 below is the same as defined in Table 1. Table 2 Example of carbamide _ polymer esterified diazonium hydrazine compound 2,6-diethoxymethyl-p-methyl age · solvent (GBL) 1 Wg 'Synthesis Example 7 26a, 2 g ! g 20 g 2 , Synthesis Example 7 26b * 2 g 2g 20 g 3 I0_g, Synthesis_Example 8 26a, 2 g !g lg 4 Chuan g 'Synthesis Example 8 26b ' 2 g !g ig Examples 13 to 24&gt柃: The respective photosensitive resin compositions obtained in Examples 1 to 12 were subjected to a lithography test, and the results were shown in Examples 13 to 24 and shown in Table 3. The respective positive photosensitive resin compositions obtained in Examples 1 to 12 were coated on a ruthenium wafer and prebaked at 125 ° C for 120 seconds. A microwafer coated with a photosensitive resin composition was exposed by a Nikonil Inc i-line stepper as an exposure apparatus, and developed with a 2.38 wt% aqueous solution of tetramethylammonium hydroxide (TMAH) for two minutes. Dip for one minute in distilled water and measure 28 1376574 with FE-SEM to determine CD (critical size). Further, the sensitivity was measured as the optimum exposure time by calculating the exposure time required to form a 10 μm L/S pattern at a line width of 1 to 1 after exposure and development. The resolution is determined as the minimum pattern size at the optimum exposure time. 5 After patterning, it was heated at 150 ° C for 30 minutes in a nitrogen atmosphere to raise the temperature to 350 ° C - hour to provide a cured film. Table 3 Exposure Energy (mJ/cm2) Resolution (μηι) Example 13 400 3 Example 14 300 3 Example 15 370 3 Example 16 280 3 Example 17 440 3 Example 18 350 3 Example 19 420 3 Implementation Example 20 330 3 Example 21 380 2 Example 22 300 3 Example 23 480 3 Example 24 290 3

參照表3,確認所有解析度具有3 μιη或更小之絕佳數 值。此外,確認曝光能量值顯示400 m J/cm2或更小之絕佳 10 光學性能。亦即,判斷聚醯胺聚合物的末端基團並非衍生 自酐,而是取代成烷基、脂環基、或芳基,所以透射度增 加了,同時使未曝光部分與曝光部分的溶解率差異最大化。 〈比較實施例5至8&gt; :微影測試 除從各別比較實施例1至4獲得光敏性樹脂組成物外, 15 依據如同實施例13的相同流程進行相同微影測試。結果設 為比較實施例5至8且顯示於下表4。 29 1376574 表4 曝光能量(mJ/cm2) 解析度(μιη) 比較實施例5 670 5 比較實施例6 500 7 比較實施例7 680 7 比較實施例8 490 5 如表4所示,使用根據比較實施例丨至4之正型光敏性樹脂 組成物溶液的比較實施例5至8具低透射度,所以曝光能量比 起根據實施例者相對較高,而且由於羧酸餘留在末端基團, 5 所以未曝光部分與曝光部分的溶解率差異為5 μιη或更大。 此外,雖然在實施例中以L/S(線與空間)圖案說明,但本 發明不限於此,而可應用於所有不同圖案,例如孔洞圖案。 儘管已以目前視為實際可行例示具體例說明本發明, 但要理解到本發明不限於所揭示的具體例,而是,相反地, 10欲涵蓋包括在隨附申請專利範圍之精神與範疇内的各種修 飾與等效配置。 【圖式簡單說明】 第1圖係展不使用正型光敏性樹脂組成物製造圖案的 製程圖。 15 【主要元件符號說明】 1…半導體裝置 2…光敏性樹脂組成物層 3…光敏性樹脂組成物層的曝光部分 4…光敏性樹脂組成物層的未曝光部分 5…顯影後的圖案化光敏性樹脂組成物層 6…固化後的光敏性樹脂組成物層 30Referring to Table 3, confirm that all resolutions have an excellent value of 3 μm or less. In addition, confirm that the exposure energy value shows excellent optical performance of 400 m J/cm2 or less. That is, it is judged that the terminal group of the polyamine polymer is not derived from an anhydride but is substituted with an alkyl group, an alicyclic group, or an aryl group, so that the transmittance is increased while the dissolution rate of the unexposed portion and the exposed portion is increased. Maximize the difference. <Comparative Examples 5 to 8>: lithography test The same lithography test was carried out in accordance with the same procedure as in Example 13 except that the photosensitive resin compositions were obtained from the respective Comparative Examples 1 to 4. The results were set to Comparative Examples 5 to 8 and shown in Table 4 below. 29 1376574 Table 4 Exposure Energy (mJ/cm2) Resolution (μιη) Comparative Example 5 670 5 Comparative Example 6 500 7 Comparative Example 7 680 7 Comparative Example 8 490 5 As shown in Table 4, use according to comparison Comparative Examples 5 to 8 of the positive photosensitive resin composition solution of Example 4 have low transmittance, so the exposure energy is relatively higher than that according to the examples, and since the carboxylic acid remains in the terminal group, 5 Therefore, the difference in dissolution rate between the unexposed portion and the exposed portion is 5 μm or more. Further, although illustrated in the embodiment in the L/S (line and space) pattern, the present invention is not limited thereto, and can be applied to all different patterns such as a hole pattern. The present invention has been described with reference to the specific embodiments of the present invention. It is to be understood that the invention is not limited to the specific examples disclosed. Various modifications and equivalent configurations. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a process diagram for producing a pattern without using a positive photosensitive resin composition. 15 [Description of main component symbols] 1: Semiconductor device 2: Photosensitive resin composition layer 3: Exposure portion 4 of photosensitive resin composition layer: Unexposed portion 5 of photosensitive resin composition layer... Patterned photosensitive after development Resin composition layer 6... Photosensitive resin composition layer 30 after curing

Claims (1)

1376574 公告本丨 七、申請專利範圍: 1. 一種正型光敏性樹脂組成物,其包含: (A) 以下式1表示的聚醯胺聚合物; (B) 酯化重氮醌化合物; (C) 含酚基化合物;及 (D) 溶劑: [化學式1]1376574 Announcement VII. Patent Application Range: 1. A positive photosensitive resin composition comprising: (A) a polyamine polymer represented by the following formula 1; (B) an esterified diazonium compound; (C) ) a phenol-containing compound; and (D) a solvent: [Chemical Formula 1] El—NH—XI —HNOC—Y1—CONH—XI L I R1 HNOC—Y2 —CONH—X2 -一 NH —E2 | 」m2 R2 其中在上式1中, 10 X丨與x2係相同或不同且獨立地為二價至四價有機 基團, Υι與γ2係相同或不同且獨立地為二價至六價有機 基團, Ri與R2係相同或不同且獨立地為氫或C1至C5有機 15 基團, EI與E2係相同或不同且獨立地為氫,或衍生自一選 自由單羧酸及其活性衍生物所構成之群組的部分,前提 是E1與E2皆非氫, 1111與1112係相同或不同且獨立地為0至100,且 20 ΓΏ|+Π12 介於 5 至 100。 2.如申請專利範圍第1項之光敏性樹脂組成物,其中該酯 化重氮醌化合物係以以100重量份聚醯胺聚合物計之1 31 1376574 至50重量份的份量被包括, 含酚基化合物係以以100重量份聚醯胺聚合物計之 0.1至30重量份的份量被包括,且 溶劑與聚醯胺聚合物係以20:8 0至9 0:10之重量比例 5 被包括。 3. 如申請專利範圍第1項之正型光敏性樹脂組成物,其中 該聚醯胺係以包含下列之方法製備: 使二胺單體和選自由四羧酸二酐、二羧酸酐、二羧 酸、及其活性衍生物所構成之群組的酸單體反應,以得 10 到反應產物;以及 使該反應產物和封端單體反應,以將反應產物的胺基轉 成醯胺基。 4. 如申請專利範圍第3項之正型光敏性樹脂組成物,其中 該二胺單體可以X(NH2)2表示,其中X係和化學式1的X, 15 或X2相同。 5. 如申請專利範圍第3項之正型光敏性樹脂組成物,其中 該二胺單體係包含非矽二胺單體並以X(NH2)2表示,其 中X係和化學式1的乂|或乂2相同,以及含矽二胺單體。 6. 如申請專利範圍第3項之正型光敏性樹脂組成物,其中 20 該酸單體係以Y(COOH)2表示的二羧酸單體,其中Y係和 化學式1的丫!或丫2相同。 7. 如申請專利範圍第3項之正型光敏性樹脂組成物,其中 該酸單體係以Y(COK’)2表示,其中Y係和化學式1的丫, 或Y2相同,K’為使Y(COOH)2和鹵化物、或Y(COOH)2 32 1376574 和1-羥基-1,2,3-苯并三唑反應所獲得的部分。 8.如申請專利範圍第3項之正型光敏性樹脂組成物,其中 該酸單體為以下式8表示的四羧酸酐: [化學式8] 5 0 0〇aya 0 0 0El—NH—XI—HNOC—Y1—CONH—XI LI R1 HNOC—Y2—CONH—X2—INH—E2 | ”m2 R2 where in Equation 1, 10 X丨 is the same or different and independent of x2 a divalent to tetravalent organic group, Υι and γ2 are the same or different and independently a divalent to hexavalent organic group, and Ri and R2 are the same or different and independently hydrogen or a C1 to C5 organic 15 group EI and E2 are the same or different and independently hydrogen, or are derived from a moiety selected from the group consisting of monocarboxylic acids and active derivatives thereof, provided that both E1 and E2 are non-hydrogen, and 1111 and 1112 are the same. Or different and independently 0 to 100, and 20 ΓΏ|+Π12 is between 5 and 100. 2. The photosensitive resin composition of claim 1, wherein the esterified diazonium compound is included in an amount of from 1 31 1376574 to 50 parts by weight based on 100 parts by weight of the polyamide polymer, The phenolic compound is included in an amount of 0.1 to 30 parts by weight based on 100 parts by weight of the polyamidamide polymer, and the solvent and the polyamidamide polymer are in a weight ratio of 20:80 to 90:10. include. 3. The positive photosensitive resin composition of claim 1, wherein the polyamine is prepared by the method comprising: diamine monomer and selected from tetracarboxylic dianhydride, dicarboxylic anhydride, and The acid monomer of the group consisting of a carboxylic acid and a reactive derivative thereof is reacted to obtain 10 to a reaction product; and the reaction product and the blocked monomer are reacted to convert the amine group of the reaction product into a mercapto group. . 4. The positive photosensitive resin composition of claim 3, wherein the diamine monomer is represented by X(NH2)2, wherein the X system is the same as X, 15 or X2 of Chemical Formula 1. 5. The positive photosensitive resin composition of claim 3, wherein the diamine single system comprises a non-nonanediamine monomer and is represented by X(NH2)2, wherein the X system and the formula 1 are 乂| Or the same as 乂2, and containing a quinone diamine monomer. 6. The positive photosensitive resin composition of claim 3, wherein the acid monosystem is a dicarboxylic acid monomer represented by Y(COOH)2, wherein the Y system and the chemical formula 1 are 丫! or 丫2 is the same. 7. The positive photosensitive resin composition of claim 3, wherein the acid single system is represented by Y(COK') 2, wherein the Y system is the same as the formula 1 or Y2, and K' is The fraction obtained by the reaction of Y(COOH)2 with a halide or Y(COOH)2 32 1376574 and 1-hydroxy-1,2,3-benzotriazole. 8. The positive photosensitive resin composition of claim 3, wherein the acid monomer is a tetracarboxylic anhydride represented by the following formula 8: [Chemical Formula 8] 5 0 0〇aya 0 0 0 • 10• 10 15 其中在上式8中,Y係和化學式1的丫1或丫2相同。 9. 一種製造光敏性圖案的方法,其包含: 將根據申請專利範圍第1至8項中任一項之正型光 敏性樹脂組成物塗在支撐基材上並使其乾燥成樹脂組 成物層; 使該樹脂組成物層曝光; 以鹼性顯影溶液使經曝光樹脂組成物層顯影;且 加熱經顯影樹脂組成物層。 10. —種光敏性樹脂層,其係使用申請專利範圍第1至8項中 任一項之正型光敏性樹脂組成物製成。 11. 一種半導體電子構件,其包含根據申請專利範圍第10項 之光敏性樹脂層。 3315 In the above formula 8, the Y system is the same as the 丫1 or 丫2 of the chemical formula 1. A method of producing a photosensitive pattern, comprising: coating a positive photosensitive resin composition according to any one of claims 1 to 8 on a support substrate and drying it into a resin composition layer Exposing the resin composition layer; developing the exposed resin composition layer with an alkali developing solution; and heating the developed resin composition layer. A photosensitive resin layer produced by using the positive photosensitive resin composition of any one of claims 1 to 8. A semiconductor electronic component comprising the photosensitive resin layer according to item 10 of the patent application. 33
TW098108418A 2008-10-07 2009-03-16 Positive photosensitive resin composition TWI376574B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20080098203 2008-10-07
KR1020080108990A KR101015857B1 (en) 2008-10-07 2008-11-04 Positive type photosensitive resin composition

Publications (2)

Publication Number Publication Date
TW201015224A TW201015224A (en) 2010-04-16
TWI376574B true TWI376574B (en) 2012-11-11

Family

ID=42215785

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098108418A TWI376574B (en) 2008-10-07 2009-03-16 Positive photosensitive resin composition

Country Status (3)

Country Link
KR (1) KR101015857B1 (en)
CN (1) CN102177469A (en)
TW (1) TWI376574B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9119320B2 (en) 2012-04-13 2015-08-25 Quanta Computer Inc. System in package assembly

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101023089B1 (en) 2008-09-29 2011-03-24 제일모직주식회사 Positive type photosensitive resin composition
KR101333704B1 (en) 2009-12-29 2013-11-27 제일모직주식회사 Positive type photosensitive resin composition
KR101400191B1 (en) * 2010-12-24 2014-05-27 제일모직 주식회사 Positive type photosensitive resin composition and photosensitive resin layer using the same
KR101400192B1 (en) * 2010-12-31 2014-05-27 제일모직 주식회사 Positive photosensitive resin composition, photosensitive resin layer prepared by using the same, and semiconductor device including the photosensitive resin layer
CN107216848A (en) * 2017-07-11 2017-09-29 南通协鑫热熔胶有限公司 A kind of PUR of flexible polyamide containing organosilicon and preparation method thereof
TWI646150B (en) * 2017-08-22 2019-01-01 Daxin Materials Corporation Photosensitive resin composition, photosensitive resin and electronic device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4314335B2 (en) 1999-04-02 2009-08-12 旭化成イーマテリアルズ株式会社 Positive photosensitive resin composition
JP4780586B2 (en) 2006-05-08 2011-09-28 旭化成イーマテリアルズ株式会社 Positive photosensitive resin composition
WO2008020573A1 (en) * 2006-08-15 2008-02-21 Asahi Kasei Emd Corporation Positive photosensitive resin composition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9119320B2 (en) 2012-04-13 2015-08-25 Quanta Computer Inc. System in package assembly

Also Published As

Publication number Publication date
KR101015857B1 (en) 2011-02-23
CN102177469A (en) 2011-09-07
TW201015224A (en) 2010-04-16
KR20100039183A (en) 2010-04-15

Similar Documents

Publication Publication Date Title
TWI376574B (en) Positive photosensitive resin composition
TWI277833B (en) Photosensitive resin composition, forming method of relief pattern and electronic parts
TWI693468B (en) Photosensitive resin composition and electronic parts
TW200940601A (en) Precursor for heat-resistant resin and photosensitive resin composition containing the same
TW201140242A (en) Negative photosensitive resin composition, method for manufacturing cured relief pattern, and semiconductor device
TW201133147A (en) Positive type photosensitive resin composition
TW201005008A (en) Heat-resistant resin precursor and photosensitive resin composition comprising the same
TWI287028B (en) Photosensitive polymer composition, method of forming relief patterns, and electronic equipment
TW201107372A (en) Alkali soluble polymer, light sensible resin composition including the same and application thereof
WO2007029614A1 (en) Positive photosensitive resin composition
TW201116554A (en) New polyamic acid, polyimide, photosensitive resin composition comprising the same and dry film manufactured by the same
TW201615696A (en) Resin and photosensitive resin composition
TWI548945B (en) Positive photosensitive resin composition, photosensitive resin film and display device using the same
TW201011465A (en) Photosensitive resin composition
TW201232180A (en) Positive photosensitive resin composition, photosensitive resin film prepared by using the same, and semiconductor device including the photosensitive resin film
WO2017204165A1 (en) Resin composition
KR101074173B1 (en) Heat-resistant photosensitive resin composition process for producing pattern from the composition and electronic part
TW201013317A (en) Positive photosensitive resin composition
TWI468866B (en) Positive photosensitive resin composition
TW201144382A (en) Positive typed photosensitive composition
TW201011466A (en) Photosensitive resin composition, process for producing cured relief pattern, and semiconductor device
TW200947124A (en) Positive photosensitive resin composition, cured film, protection film and insulation film, and semiconductor device and display device therewith
TW201226448A (en) Positive photosensitive resin composition, photosensitive resin layer prepared by using the same, and semiconductor device including the photosensitive resin layer
TWI376395B (en) Water soluble photo-sensitive polyimide polymer, process for preparing the same, and photoresist composition containing the same
TW201103950A (en) Insulating film of electronic component or resin composition for surface protective film, fabricating method of patterned cured film and electronic componet