TW201006597A - Beam processing apparatus, beam processing method and beam processed substrate - Google Patents

Beam processing apparatus, beam processing method and beam processed substrate Download PDF

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Publication number
TW201006597A
TW201006597A TW098109351A TW98109351A TW201006597A TW 201006597 A TW201006597 A TW 201006597A TW 098109351 A TW098109351 A TW 098109351A TW 98109351 A TW98109351 A TW 98109351A TW 201006597 A TW201006597 A TW 201006597A
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Taiwan
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substrate
processed
layer
light
processing
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TW098109351A
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Chinese (zh)
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Satoki Nakada
Hiroshi Yamaoka
Ryo Kinomoto
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Marubun Co Ltd
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Publication of TW201006597A publication Critical patent/TW201006597A/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06Shaping the laser beam, e.g. by masks or multi-focusing

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

Abeam processing apparatus which processes a layer to be processed 3 formed on a side of glass substrate 2 by beam irradiation is shown. An objective optical apparatus 51, which is in beam irradiating means 50, includes a conical lens as an axial light-condensing element 52 for irradiating Bessel beam. Bessel beam is axial light-condensing beam, and its diameter does not much vary especially in the center of the beam which is peak of beam strength, insofar as the conical lens is in close range. Consequently, the processing can be executed precisely even the point of beam irradiation against the objective optical apparatus 51 changes because of bending of the substrate, without controlling focal position during processing; because the bended position is still in the focal depth.

Description

201006597 六、發明說明: C發明所屬^^技術領域3 發明領域 本發明係有關於於玻璃基板等基板上形成作為利用光 電效果之發電系統之半導體元件時,可適合用於以光束(雷 射等)將構成半導體元件等之薄膜圖型化之光束加工裝 * 置、光束加工方法及具有業經以該光束加工裝置加工之被 _ 加工層(薄膜)之光束加工基板。 發明背景 ' 一般’使用矽系非晶質之前述發電系統之製造上,於 、 大型玻璃基板上最先形成透明電極(例如氧化銦、氧化錫、 氧化辞等)層,進行圖型化,接著,於玻璃基板上形成非晶 質矽層(光電轉換層),進行圖型化,然後,於玻璃基板上形 成金屬電極,進行圖型化。 鲁 此時之各圖型化以不使用濕式而使用雷射光束之雷射 圖型化進行之方法已確立。 在此之雷射圖型化係於依序形成於玻璃基板上之各薄 膜層依序形成溝(縫隙)’以溝為分界,使薄膜層電性絕緣, 分割成複數個電池單元者,亦稱為雷射劃線。 在此種雷射劃線中,藉對形成在玻璃基板之透明電極 層從玻璃基板側照射雷射光束’而形成溝(參照專利文獻1)。 即,不是從玻璃基板之形成有被加工層之面侧,而是 K其反側之面照射雷射光束。此時’當為從玻璃基板之上 3 201006597 側照射雷射光束之結構時,將玻璃基板以被加工層為下之 狀態配置於台上。此時,因被加工層接觸台上面,故有被 加工層損傷或加工時’受到台之影響(例如溫度或雷射之反 射)之可能性。 是故’進行在支撐玻璃基板之周邊部,垂吊玻璃基板 之狀態下,從上照射雷射之動作。 此時,將玻璃基板以從周邊部垂吊之狀態於一方向搬 送’使雷射之照射位置於與玻璃基板之搬送方向約略垂直相 父之方向移動,於玻璃基板上之被加工層將溝形成條紋狀。 【專利文獻1】日本專利公開公報2006-54254號 C 明内3 發明揭示 發明欲解決之課題 在利用光電效果之發電系統之製造或電漿顯示器等面 板顯示器之製造等,為刪減成本,而發展玻璃基板之大型化。 在玻璃基板大型化時,由於基本上不將玻璃基板增 厚,故將已大型化之玻璃基板以周邊部支撐時,玻璃基板 於下侧大幅撓曲。藉此,玻璃基板之左右側部之高度位置 與左右中央部之高度位置大為不同。 又,照射雷射時,以光學元件將雷射在被加工層上集 光或成像。從上側照射雷射時’如上述,其高度位置隨玻 璃基板之位置而大幅不同時,即使在作為照射位置之任一 處使光學^件之焦點對準,移動照射位置時,焦點仍偏離。 是故,習知,在雷射劃線用之雷射光束加工裝置中, 201006597 -又置用以在平f對玻璃基板難之 量如上述撓曲之基板之雷射照射 機構。即,測 為光學元件之對物鏡之距離),依測量度位置(距離作 件之對物鏡上下移動,藉此,使_^’使作為光學元 加工層平常在光學元件之焦點範圍内下移動,以使被 在此,為使玻璃基板撓曲而彎曲 射之照射位置之移動方向(左右方向左右方⑴與雷201006597 VI. Description of the Invention: The present invention relates to a semiconductor device that is formed on a substrate such as a glass substrate as a power generation system using a photoelectric effect, and is suitable for use in a light beam (laser or the like). A beam processing device that forms a thin film of a semiconductor element or the like, a beam processing method, and a beam processing substrate having a processed layer (film) processed by the beam processing device. BACKGROUND OF THE INVENTION In the manufacture of the above-mentioned power generation system using bismuth-based amorphous materials, a layer of transparent electrodes (for example, indium oxide, tin oxide, oxidized, etc.) is first formed on a large glass substrate to be patterned, and then patterned. An amorphous germanium layer (photoelectric conversion layer) is formed on the glass substrate, patterned, and then a metal electrode is formed on the glass substrate to form a pattern. The method of performing laser patterning using a laser beam without using a wet type has been established. Here, the laser patterning is performed by sequentially forming grooves (slits) in the respective film layers formed on the glass substrate in sequence, and dividing the film layers into a plurality of battery cells. It is called a laser line. In such a laser scribing, a laser beam is irradiated from the glass substrate side to the transparent electrode layer formed on the glass substrate to form a groove (see Patent Document 1). That is, the laser beam is not irradiated from the surface side of the glass substrate on which the layer to be processed is formed, but the surface on the opposite side of K. At this time, when the structure of the laser beam is irradiated from the side of the glass substrate 3 201006597, the glass substrate is placed on the stage with the layer to be processed as a lower layer. At this time, since the layer to be processed contacts the upper surface of the stage, there is a possibility that the layer to be processed is damaged or processed, which is affected by the stage (for example, reflection of temperature or laser). Therefore, the operation of irradiating the laser from above in a state where the glass substrate is suspended in the peripheral portion of the supporting glass substrate is performed. At this time, the glass substrate is conveyed in one direction in a state of being suspended from the peripheral portion. The irradiation position of the laser is moved in a direction perpendicular to the direction in which the glass substrate is conveyed, and the layer to be processed on the glass substrate is grooved. Formed in stripes. [Patent Document 1] Japanese Patent Laid-Open Publication No. Hei. No. 2006-54254 C. The present invention discloses a problem to be solved by the manufacture of a power generation system using photoelectric effect or the manufacture of a panel display such as a plasma display, etc., in order to reduce costs. The development of large-scale glass substrates. When the glass substrate is increased in size, since the glass substrate is not substantially thickened, when the glass substrate having a large size is supported by the peripheral portion, the glass substrate is largely deflected on the lower side. Thereby, the height position of the left and right side portions of the glass substrate is greatly different from the height position of the left and right central portions. Further, when the laser is irradiated, the laser is collected or imaged by the optical element on the layer to be processed. When the laser is irradiated from the upper side, as described above, when the height position thereof largely differs depending on the position of the glass substrate, the focus is deviated even when the position of the optical member is aligned at any position as the irradiation position. Therefore, it is known that in the laser beam processing apparatus for laser scribing, 201006597 - a laser irradiation mechanism for a substrate having a difficulty in flattening the glass substrate as described above. That is, the distance measured by the objective lens of the optical element is determined according to the measurement position (the objective lens is moved up and down from the workpiece, thereby causing the _^' to move as the optical element processing layer normally within the focus range of the optical element. In the left and right direction (1) and the thunder of the irradiation position where the glass substrate is bent and bent to deflect the glass substrate.

=物鏡賴齡置 因而,雷射劃線開始時,對準對物鏡 在不改變對物鏡之高度位置下,盔 ^ ^ …、决繼續進行雷射劃線。 因設置此種自動對焦機構,進行雷射劃線之雷射光束 加工裳置之構造繁雜化,且成本增高。又 時,亦有被加工物之高度位置之測量 订雷射劃線 高度位置之變更成為雷射料料 隨此之對物鏡之 之變更成為田射麟作業之作業速度之瓶頸的可 此性,此時’雷射劃線作業之高速化為自動對焦機構所阻礙。 又,進行條紋狀或矩陣狀加工時,藉 束隔著間隔,《騎,可謀求加工相之縮短條雷射先 此時,藉同時在複數個不同位置,照射雷射光束,以 所有雷射光束’以高精確度對焦並非易事,相較於以!個雷 射光束,如上述,使用用自動對焦機構來加工時,有加工 精綠度降低,因此,最終製品之品質降低之虞。舉例^工 為前述發電系統時,有導致對太陽光之受光之發電效 低的可能性。 > 又,為將複數條雷射光束以排列之狀態照射,而將複 5 201006597 數個對物光學裝置(對物鏡)排列配置時,各 雷射光束之間隔 X對物鏡之僅限制’而不易縮小複數雷射光束之間隔。 特別疋’使對物鏡之焦點距離長,而可與玻璃基板之 制相對時’可使用之對物鏡之徑增大,而無法縮小複數 t射光束之間隔。II此’具有複數對物鏡之對物光學裝置 增大,使對物裝置移動之機構亦龐大。 本發月即疋鑑於上述情況而發明者,本發明之目的係 提供以雷射光束等光束將形成於基板上之被加工層加工 時不=以自動對焦經常調整光束之焦點位置之光束加工 裝置光束加工方法及具有以前述光束加工裝置加工之被 加工層之光束加工基板。 用以欲解決課題之手段 一申請專觀圍第1奴光束加工裝置侧形成於基板 "面之被加J1層照射光束而加卫者其特徵在於包含有: 光束f機構’係將形成於前述基板-面之被加工層朝 層者攸—面之上側照射光束,加工前述被加工 層者’且刖述先束照射機構具有進行轴狀集光 用光學裝置,以照射轴狀集光光束。〃彳集先 在申請專利範圍第!項記載之發明中, 有軸狀集光用光學裝置、亦 …、機構具 旋轉三二=射所謂之貝索光束之 束。 而了照射作為轴狀集光光束之貝索光 光光束以為光學元件之旋轉三 至某程度之距離’以集光成軸 貝索光束、亦即柏狀集 稜鏡集光時,從旋轉三稜鏡 狀之狀態輸出。 201006597 此外’焦點深度依光學元件而不同,用於雷射光束之 集光之凸透鏡等光學元件之焦點深度為數l〇〇"m左右,相 對於此’可令旋轉三稜鏡之焦點深度為數_左右,根據集 光時之光束徑,可為數10mm左右。 因而,使用旋轉三稜鏡,照射貝索光束時,如上述, 左右侧緣部被支撐之基板即使因自身重量而呈撓曲狀態, 亦可使因形成於基板之被加工層之水平方向位置之不同引 起之鉛直方向的位置偏離在光束之焦點深度内。 藉此,一面使光束移動’一面對形成於呈左右撓曲狀 態之基板之被加工層照射時’不需以自動對焦機構使對物 光學裝置上下移動,而即使對撓曲之基板從一定之高度照 射光束,被加工層亦在焦點深度之範圍内。 因而,藉使用軸狀集光光束’將雷射集光,對被加工 層照射時’可省略自動對焦機構,而可大幅刪減光束加工 裝置之成本’同時,可大幅將光束加工裝置之對物光學裝 置之焦點調整部份之構造簡單化。 又,由於沒有自動對焦機構,故不致產生自動對焦機 構之控制之作業延遲,而可消除謀求作業之高速化時之阻 礙主要原因。 申請專利範圍第2項之雷射加工裝置係對形成於基板 一面之被加工層照射光束而加工者,其特徵在於包含有: 光束照射機構,係將形成於前述基板一面之被加工層朝 上’從前述基板另一面之下側照射光束’加工前述被加工 層者;支撐機構,係從下側支撐前述基板者;及粉體去除 7 201006597 機構’係吸引因則述被加工層之光束照射 、、 <加工而產生之 粉體者;且前述衫歸機構具有進雜狀集光之轴 光用光學裝置,以照射轴狀集光光束。 一 在申請專利範圍第2項記載之發明中,藉具有轴狀集光 用光學裝置,對基板之被加工層照射軸狀集光光束,可發 揮與申請專圍第i仙同之效果,同時,將基板之被加 工層朝上,從基板之下側以支撐機構支樓,藉此,不致使被 加工層接觸其他構件而損傷,將基板從下側支#,可防止基 板因自身重量而撓曲。藉此,可進行精賴更高之加工。 即,即使防止基板之撓曲,因基板位置引起之厚度之 搖動或變形等,有光束之照射位置稍微偏離之虞,而藉使 用軸狀集光光束,可使些微之焦點位置之偏離在焦點深度 之範圍内,而可謀求加工精確度之提高。 特別是如申請專利範圍第3項記載般,同時照射複數光 束時’儘T能抑制為加工精確度降低主要原因之基板撓 曲’而可謀求加卫精嫁度之提高,並且可謀求以同等之加 工精確度,同時可照射之光束數之增加。 又,在使被加工層朝上之狀態下,有因被加工層之加 工產生之粉體(粉塵)再附著於被加工層之虞藉吸引去除以 粉體去除機構產生之粉體,可解決粉趙引起之問題。 /請專利範圍第3項記載之光束加工裝置係在申請專 利範圍第1或2項記載之光束加卫裝置中,包含有:基板移 動機構’係'使前述基板於至少__方向上移動者;及光束照 4置移動機構,係使前述軸狀集光用光學裝置沿與前述 201006597 基板之1個移動方向交叉之一方向上來回移動者;且前述光 束照射機構具有複數沿著前述基板之移動方向之位置不同 的軸狀集光用光學裝置,藉同時照射複數個軸狀集光光 束,可以一次之軸狀集光光束之掃瞄將前述被加工層加工 成條紋狀。 在申請專利範圍第3項記載之發明中,同時照射複數雷 射光束時,因各對物光學裝置(在此為軸狀集光用光學裝置) 之焦點位置之偏離或基板側水平方向之位置不同引起之被 加工層鉛直方向之位置偏離,各雷射光束之焦點降低,因 此,加工精確度降低,使用貝索光束時,由於焦點深度深, 故可防止加工精確度之降低。 即,由於焦點深度深至可充分將各貝索光束之焦點位 置之偏離納入至焦點深度内,故在焦點位置之偏離與加工 精確度之降低無關聯下,可維持加工精確度。 因而,即使同時以複數光束將被加工層加工,亦可防 止加工精確度降低,而可防止使用該光束加工而製造之製 造物之性能降低。舉例言之,製造物為利用光電效果之發 電系統時,可防止以以複數光束同時加工引起之發電效率 降低。 又,可在必要之加工精確度之範圍内增加同時照射之 光束數,而可謀求加工時間之進一步縮短。 貝索光束用光學元件之旋轉三棱鏡有複數種,本發明 使用圓錐形透鏡。此圓錐形透鏡之外徑小於用於幾乎相同 之加工時之一般光學透鏡(例如凸透鏡)。圓錐形透鏡如上述 9 201006597 由於原本焦點深度深,而不需自動對焦,故不需增大焦點 距離,俾以自動對焦因應上述基板之撓曲,而不需如一般 之透鏡般,為增大焦點距離,而增大透鏡徑。 除此之外,對位於基板裡面之被加工層從基板表面,= Objective lens aging. Therefore, when the laser scribe line starts, the aligning objective lens does not change the height position of the objective lens, the helmet ^ ^ ..., and the laser scribe line continues. Due to the provision of such an autofocus mechanism, the structure of the laser beam for performing laser scribing is complicated and costly. At the same time, the height position of the workpiece is also changed. The change of the height position of the laser marking line becomes the bottleneck of the operation speed of the laser shooting material with the change of the objective lens. At this time, the speed of the laser scribing operation is hindered by the autofocus mechanism. In addition, when stripe or matrix processing is performed, the distance between the bundles and the spacers is "riding, and the laser beam can be shortened by the processing phase. At this time, the laser beam is irradiated at all of the plurality of different positions, and all the lasers are irradiated. Beam 'focusing with high precision is not easy, compared to! As described above, when the laser beam is processed by the autofocus mechanism, the processed greenness is lowered, so that the quality of the final product is lowered. For example, when the power generation system is used, there is a possibility that the power generation due to sunlight is low. > In addition, in order to illuminate a plurality of laser beams in a state of arrangement, and to arrange a plurality of objective optical devices (objective lenses), the interval X of each laser beam is limited only to the objective lens. It is not easy to reduce the spacing of the complex laser beams. In particular, when the focal length of the objective lens is long and the glass substrate can be used as opposed to the glass substrate, the diameter of the objective lens can be increased, and the interval between the plurality of t-beams cannot be reduced. II. The optical device with a plurality of pairs of objective lenses is enlarged, and the mechanism for moving the object device is also large. The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a beam processing apparatus which does not use a beam such as a laser beam to process a processed layer formed on a substrate, and which does not constantly adjust the focus position of the beam by autofocus. A beam processing method and a beam processing substrate having a processed layer processed by the beam processing device. The means for solving the problem is to apply for a special observation. The first slave beam processing device is formed on the substrate and the surface is coated with a J1 layer illumination beam. The defender is characterized in that: the beam f mechanism is formed in The substrate-surface processed layer is irradiated with a light beam toward the upper side of the layer, and the processed layer is processed. The first beam irradiation mechanism has an axial collecting optical device for irradiating the axial collecting beam. . 〃彳集先 In the scope of patent application! According to the invention described in the invention, there is an optical device for shaft-shaped collecting light, and a mechanism for rotating a so-called Bezo beam. And irradiating the Besso light beam as the axial collecting beam, the rotation of the optical element is three to a certain distance 'to collect the light into the axis of the Besso beam, that is, the arbor-like collection, when the light is three State output. 201006597 In addition, the depth of focus differs depending on the optical components. The depth of the focus of the optical components such as the convex lens used for collecting the laser beam is several l〇〇"m, which is relative to the depth of the rotation of the three axes. _ Left and right, according to the beam diameter when collecting light, it can be about 10mm. Therefore, when the Bissau beam is irradiated with the rotation of the Bezo beam, as described above, the substrate supported by the left and right side edges can be deflected by its own weight, and the horizontal position of the processed layer formed on the substrate can be made. The difference in the vertical direction caused by the difference is within the depth of focus of the beam. Therefore, when the light beam is moved 'on the surface of the processed layer formed on the substrate in the left and right flexed state, it is not necessary to move the objective optical device up and down by the autofocus mechanism, even if the substrate for deflection is fixed. The height of the beam is illuminated, and the layer being processed is also within the depth of focus. Therefore, by using the axial collecting beam to collect the laser light, when the layer is irradiated, the autofocus mechanism can be omitted, and the cost of the beam processing device can be greatly reduced. At the same time, the beam processing device can be greatly The structure of the focus adjustment portion of the object optical device is simplified. Further, since there is no autofocus mechanism, the operation delay of the control of the autofocus mechanism is not caused, and the main cause of the obstacle to the increase in the speed of the work can be eliminated. The laser processing apparatus according to the second aspect of the invention is directed to irradiating a light beam on a processed layer formed on one side of the substrate, and is characterized in that the light beam irradiation means includes a processed layer formed on one side of the substrate facing upward 'Illuminating the light beam from the lower side of the other side of the substrate' to process the layer to be processed; the supporting mechanism for supporting the substrate from the lower side; and powder removal 7 201006597 Mechanism's attraction to the beam of the processed layer And, the powder produced by the processing; and the above-mentioned vesting mechanism has an optical device for axial light that collects light, and illuminates the axially shaped light beam. In the invention described in the second aspect of the invention, the axial light collecting optical beam is applied to the processed layer of the substrate by the optical device for axial collecting, and the effect of the application is the same as that of the application. The substrate is processed to face up, and the support mechanism is supported from the lower side of the substrate, thereby preventing damage to the processed layer from contacting other members, and the substrate is supported from the lower side to prevent the substrate from being weighted by itself. Flexed. In this way, it is possible to perform higher processing. That is, even if the deflection of the substrate is prevented, the irradiation position of the beam is slightly deviated due to the shaking or deformation of the thickness caused by the position of the substrate, and by using the axial collecting beam, the focus position of the micro focus can be deviated from the focus. Within the depth range, processing accuracy can be improved. In particular, as described in the third paragraph of the patent application, when the plurality of light beams are simultaneously irradiated, "the T can suppress the deflection of the substrate which is the main cause of the reduction in processing accuracy", and the improvement of the degree of emphasizing can be achieved, and the same can be achieved. The processing accuracy, while the number of beams that can be illuminated increases. Further, in a state in which the layer to be processed is facing upward, the powder (dust) generated by the processing of the layer to be processed is attached to the layer to be processed, and the powder generated by the powder removing mechanism is removed by suction. The problem caused by Pink Zhao. The beam processing device according to claim 3, wherein the beam moving device according to claim 1 or 2 includes a substrate moving mechanism 'system' for moving the substrate in at least the __ direction And the beam moving 4 movement mechanism is configured to move the axial light collecting optical device back and forth in a direction intersecting one of the moving directions of the 201006597 substrate; and the beam irradiation mechanism has a plurality of movements along the substrate The axial collecting optical device having different positions in the direction irradiates the plurality of axial collecting beams at the same time, and the processed layer can be processed into a stripe shape by scanning the axial collecting beam. In the invention described in the third aspect of the invention, when the plurality of laser beams are simultaneously irradiated, the position of the focus of each of the pair of optical devices (here, the optical device for shaft collecting) is shifted or the position of the substrate is horizontal. The position of the laser beam caused by the difference in the vertical direction is different, and the focus of each laser beam is lowered. Therefore, the processing accuracy is lowered. When the Besso beam is used, since the depth of focus is deep, the processing accuracy can be prevented from being lowered. That is, since the depth of focus is so deep that the deviation of the focus position of each Bezo beam can be sufficiently incorporated into the depth of focus, the processing accuracy can be maintained without a correlation between the deviation of the focus position and the reduction in processing accuracy. Therefore, even if the processed layer is processed by the plurality of beams at the same time, the processing accuracy can be prevented from being lowered, and the performance of the article manufactured by using the beam processing can be prevented from being degraded. For example, when the manufactured product is a power generation system using a photoelectric effect, it is possible to prevent a decrease in power generation efficiency caused by simultaneous processing of a plurality of beams. Further, the number of beams to be simultaneously irradiated can be increased within the range of necessary processing accuracy, and the processing time can be further shortened. There are a plurality of rotating prisms for the Bezo beam beam optical element, and the present invention uses a conical lens. The outer diameter of this conical lens is smaller than that of a general optical lens (e.g., a convex lens) for almost the same processing. Conical lens as described above 9 201006597 Because the original depth of focus is deep, no need to auto focus, so there is no need to increase the focal length, and the autofocus should be used to flex the above substrate without increasing the lens as in the case of a general lens. Focus distance and increase lens diameter. In addition, the processed layer located inside the substrate is from the surface of the substrate,

以基板為中介’照射貝索光束,故因被加工層之加工昇 華、液化後再ϋ化之被加工物相對於圓錐形透鏡,位於基 板之反侧(對側)’故不需使圓錐形透鏡從被加卫層分離,俾 使再固化之被加卫物不致附著於圓錐形透鏡可使圓錐形 透鏡接近不接觸撓曲之程度。因而,不需增大貝索光束之 徑,可使驗相對於-般絲透鏡非f小之圓錐形透鏡。 藉此排列複數個旋轉三複鏡,同時照射複數貝索光 束時可使貝索光束之間隔較—般之絲透鏡之雷射光束 縮小。藉此,可增大貝索光束之_之設計之自由度。 又’可使具有複數對物光學元件之頭部份(對物光學裝置) 大中田!餘it隨著頭之小型化及輕量化,使頭之移動機構 等簡單化’而可易謀求移動精確度之提高或祕之提高。The substrate is used as the medium to illuminate the Besso beam. Therefore, the processed object is sublimated by the processing of the processed layer, and the processed object is liquefied and then deuterated. The workpiece is located on the opposite side (opposite side) of the substrate with respect to the conical lens. Separating from the layer being protected, the re-solidified adherent does not adhere to the conical lens to bring the conical lens closer to the extent of non-contact deflection. Therefore, it is not necessary to increase the diameter of the Bezo beam, and it is possible to inspect a conical lens which is smaller than the -filament lens. By arranging a plurality of rotating triple-lens mirrors while illuminating the plurality of Besso beams, the distance between the Besso beams is reduced compared to the laser beam of the general-looking lens. Thereby, the degree of freedom in designing the Bezo beam can be increased. In addition, it is possible to have a head portion (optical optical device) with a plurality of pairs of optical elements. With the miniaturization and weight reduction of the head, the movement mechanism of the head is simplified, and the accuracy of movement or the secret increase can be easily sought.

申請專利範圍第4項記載之光束加卫裝置係在申請專 利範圍第1項至第3項中任-項記载之光束加工裝置中,包 含有:基板移動機構,係使前述基板於至少-方向上移動 者;及光束照射位置移動機構,係使前述轴狀集光用光學 裝置沿與前述基板之1個移動方向交又之-方向上來回移 動者’且刚述光束照射機構具有複數沿著前述基板之移動 方向的位置不同之軸狀集光用光學裝置,藉同時照射複數 個軸狀集光光束,可以-次之軸狀集光光束之掃猫將前述 10 201006597 被加工層加工成條紋狀。 在申睛專利範圍第4項記載之光束加工裝置中,將基板 之被加工層光束加工時,不需反覆進行基板之搬送開始及 ^ 舉例言之,在以等速搬送基板之狀態下,可進行光 ,而可謀求基板之搬送機構及搬送控制之簡單化, 並且可謀求光束加工之作業時間之縮短。 又,一The beam processing device according to claim 4, wherein the beam processing device according to any one of claims 1 to 3, further comprising: a substrate moving mechanism, wherein the substrate is at least - And the beam irradiation position moving mechanism causes the axial light collecting optical device to move back and forth in a direction parallel to a moving direction of the substrate, and the beam irradiation mechanism has a plurality of edges The axial light collecting optical device having different positions in the moving direction of the substrate is irradiated with a plurality of axial collecting beams at the same time, and the 10th 201006597 processed layer can be processed into a sweeping cat of the axially collecting light beam. Striped. In the beam processing apparatus according to the fourth aspect of the invention, when the processed layer beam of the substrate is processed, it is not necessary to repeatedly carry out the substrate transfer start and, in other words, the substrate can be transported at a constant speed. By performing light, it is possible to simplify the transportation mechanism and the conveyance control of the substrate, and to shorten the working time of the beam processing. Again, one

面搬送,一面進行光束加工之方法已知有使用 易^鏡’掃晦光束之方法’此時’即使使脚透鏡,亦不 其基板以直角照射光束,而對基板斜向照射光束 。此時, 板2與其空氣之折射率之不同及人射角度,有在基 偏離射Μ之㈣成於反側之被加層之加位置產生 瞄光束:進打精確度高之加工。在此,以電流鏡掃 等+〜上述’亦考量控制光束之照射位置 成為極為困難之控制。 到'此’根據本發明,掛其如 束,# 0 & 對基板可儘量接近垂直地入射光 極高之4 1 …點,衣度冰,故可進行精確度 -面第5項之光束加工方法係對形成於基板 加工層之-面二=工者,其係從形成有前述被 朝下之_基板之_成有前述被加工層 面相反的另-面上側照射軸狀集光光:…被加工層之 板為中介,藉前述轴狀集光光束加此’以前述基 在中料利_第5項記载 麵加工層。 利範圍第1項記載之翻㈣ 可獲得與申請專 201006597 在申請專利範圍第6項記載之光束加工方法係對形成 - 於基板一面之被加工層照射光束而加工者,其係從呈將形 成有前述被加工層之一面朝上,而從下被支撐之狀態的前 述基板之與形成有前述被加工層之面相反的另—面下側照 射軸狀集光光束’藉此,以前述基板為中介,藉前述轴狀 集光光束加工前述被加工層,且從前述基板上側吸引去除 . 因岫述被加工層之前述光束之加工而產生之粉體。 . 在申請專利範圍第6項記載之發明中,可獲得與申請專 矛J视圍第2項記載之發明相同之作用效果。 參 申請專利範圍第7項記載之光束加工基板係具有以申 凊專利範圍第1至第4項中任一項之光束加工裝置加工之被 加工層者。 在申請專利範圍第7項記載之發明中,可獲得與申請專 - 利範圍第1至4項中任—項記載之發明相同之作用效果。 發明之效果 根據本發明之光束加工裝置、光束加工方法及光束加 工基板’藉使用焦點深度深之貝索光束,在將基板以左^ _ 側緣支撐懸吊,而使被加工層為下之狀態下’即使基板因 自身重量而撓曲,對基板改變光束之照射位置時不需調 1焦點。即,在基板撓曲之狀態下,亦不需隨著光束之照 射位置之移動對焦,而可從光束加工裝置省略自動對焦機 構藉此’可謀求成本之刪減、光束加工裝置之構造之簡 單化及在自動對焦之控制上不需時間之加卫時間之縮短。 圖式簡單說明 12 201006597 第1圖係_示本發明第1實施形態之光束加i裝置概略 之平面圖。 第2圖係顯示前述光束加工裝置之概略之正面圖。 第3圖係_示前述光束力口工裝置之概略之主要部份侧 面圖。 第4圖係⑹本發明第2實施形態之光束加工裝置之概 • 略之平面圖。 Φ 第5圖系肩示第2實施形態之光束加工裝置之概略之截 面圖。 第6圖係顯示本發明第3實施形態之光束加工裝置之概 • 略之平面圖。 第7圖系顯示第3實施形態之光束加工裝置之概略之正 面圖。 第8()圖第8(d)圖係用以說明第3實施形態之光束昭 射方法者。 … •第9⑷圖〜第9(b)圖係顯示第4實施形態之光束加工裝 置之概略圖。 ~ 第1圖糸_示第4實施形態之光束加工震置之概略圖。 t實施冷式】 較佳實施例之詳細說明 以下,面參照附加之圖式,一面說明本發明第丨實施 形態。 第1圖至第3圖係顯示本發明第1實施形態之光束加工 裝置之概略結構者。 13 201006597 此例之光束加工裝置係適合用於製造利用光電效果之 發電系統或電漿顯示器等’以光束(在此為雷射光束)將形成 於玻璃基板等透明基板上之薄膜層圖型化者,對基板上之 薄膜層(被加工層)照射雷射光束,使其昇華、液化、剝離, 藉此,形成溝,呈以該溝使薄膜層分離斷裂之狀態,而可 使薄膜層呈任意形狀者’在此’於薄膜將溝形成條紋狀& - 矩陣狀。 在此例中,就將最終製品作為使用非晶質矽之前述發 電系統之情形來說明。在使用非晶質石夕之前述發電系、统 φ 中,由於無法獲得強大電壓,故於玻璃基板等透明基板上 將複數個電池形成條紋狀,同時,將此以串聯連接,而可 輸出必要之電壓。 ' 製造時,首先,由於從玻璃基板側採用太陽光,故於 - 玻璃基板側形成透明電極之薄膜。藉於此透明電極之薄膜 以預定間隔形成溝,而形成條紋狀透明電極。接著,於透 明電極上形成作為進行光電轉換之半導體元件之非晶質矽 薄膜。此外,此部份作為具有PN接合或PIN接合之半導體 · 元件。 於圖型化成條紋狀之透明電極之薄膜層上形成由複數 層構成之非晶質矽層作為光電轉換層後,再以雷射光束形 成溝。此外,此溝係形成與形成在上述透明電極之薄膜層 之溝相鄰。 接著,形成金屬電極之薄膜層,同樣地,以雷射光束 形成溝。此時,形成金屬電極之溝,以與形成在上述非曰 14 201006597 質矽層之溝相鄰,同時,形成於與形成在非晶質矽層之溝 相鄰之透明電極之溝在反侧與非晶質矽層之溝相鄰。即, 各層之溝形成為以透明電極層之溝、非晶質石夕層之溝、金 屬電極層之溝之順序排列相鄰的狀態。 在以上之各薄膜之溝之形成使用本發明之光束加工裝置。 如第1圖至第3圖所示,光束加工裝置具有將玻璃基板 2(基板)5之左右側緣支撐成於一搬送方向(亦可包含反方向) 搬送自如之基板移動機構5、對形成於前述玻璃基板2一面 之被加工層3照射光束,將前述被加工層3加工之光束照射 機構50。 基板移動機構5由保持玻璃基板2之左右側緣部而移動 之圖中未示之保持滑件部、使此保持滑件部沿引導軌道 5a、5a移動之圖中未示之驅動機構構成。 此外,驅動機構為諸如滾珠螺桿、使用金屬線、使用 線性馬達等可使用一般使被加工物於一方向移動之機構。 光束照射機構50在此例中具有具雷射之光源裝置等, 而生成雷射之圖中未示之雷射生成部、用以對玻璃基板2照 射雷射光束之光學系統。 光源裝置可使用YAG雷射、C02雷射、其他氣體雷射、 固體雷射、半導體雷射、液體雷射、纖維雷射、薄碟雷射 等至少任一者作為雷射。 在此,可視光雷射使用波長532nm之YAG雷射。 又,YAG雷射基本上波長為l〇64nm,已知有將令此為一 半532nm之技術,藉532nm之可視光,可有效率地穿透基板。 15 201006597 此外,光源裝置不限於YAG雷射用者,且雷射光束之 波長亦不限532nm’雷射光束需為穿透具有玻璃基板2等之 被加工層之基板的波長,在穿透可視光,且不易穿透可視 光區域以外之電磁波之基板中,宜使用可視光之光束。又, 在被加工層3 ’光束宜有效率地被吸收,可以光束有效率地 加工,作為光束之電磁波波長需選擇易穿透基板(吸收率 . 低),且易為被加工層3吸收之波長。 當基板為透明,被加工層3為透明電極時,亦可選擇為 可視光’且在基板側無吸引峰值’在透明電極側有吸引峰 參 值之波長,亦可選擇在可視光區域與其周邊區域、近紅外 線區域、近紫外線區域,基板側易穿透,被加工層3側不易 透過之波長。 ' 又,雷射光束宜為脈衝。 - 又,光束照射機構5〇之光學系統具有對物光學裝置 51,以對物光學裝置51於被加工層集光或對準成像之焦 點,照射光束。 … 在本發明中,對物光學裝置51使用用以照射作為軸狀 霉 集光光束之貝索光束之旋轉三稜鏡(轴狀集光用光學元件 52)。旋轉三稜鏡為可形成貝索光束之光學元件之總稱,除 了圓錐形透鏡外,已知有具有環狀狹縫者或具有環狀 者等。 在此例中使用圓錐形透鏡。 一對物光學裝置51之軸狀集光用光學裝置(輛狀集光用 光學元件52)不限旋轉三稜鏡’已知亦有以繞射光學元件或 16 201006597 王像光予7L件等進行軸狀集光,亦可使用該等旋轉三棱鏡 0卜1光學1件’輸出軸狀集光光束者。 又對物光學裝置51具有複數個軸狀集光用光學元件 52 ’而可同時照射複數軸狀集光光束。舉例言之,如第3圖 斤:複數轴狀集光用光學元件52以與玻璃基板2之搬送方 B平行J_於與對物光學裝置51之後述移動方向垂直相交 之方向排列之狀態配置於對物光學裝置5卜此外,在第2圖 及第3圖巾’轴狀集光用光學元件52之前端成為圓錐狀光學 το件,而具有旋轉三稜鏡之功能。 由於各軸狀集光用光學元件52為小徑,故,可使對物光 學裝置51較使用—般之對物用透鏡來集光之情形小型化。 對物光學裝置51在玻璃基板2上以於與玻璃基板2之搬 送方向垂直相交之方向為引導軌道53引導之狀態移動自 如。又’對物光學裝置51可以圖中未示之驅動裝置沿著引 導軌道53來回移動。此時,亦可使用與玻璃基板2之基板移 動機構5之驅動機構相同者作為驅動裝置。此外,以引導軌 道53及驅動裝置構成光束照射位置移動機構。 對對物光學裝置51之雷射光束之供給使用鏡或棱鏡, 朝對物光學裝置51從光源裝置側照射雷射,以對物光學裝 置51使光束之照射方向朝向玻璃基板2側,同時,對玻璃基 板2照射光束。舉例言之’呈從光源裝置藉由鏡或棱鏡,沿 上述引導軌道53照射雷射之狀態,而呈平常可對沿引導軌 道53移動之對物光學裝置51照射雷射之狀態。 此外,亦玎為對對物光學裝置51照射雷射時,經由光 17 201006597 纖,照射雷射之結構。 又’各對物光學裝置51可以諸如高度位置之變更等眾 所周知之方法,調整焦點位置,不設置自動對焦功能,而 在調整焦點位置一次後之雷射加工中’不需自動變更雷射 光束之焦點。 s兑明使用如上之光束加工裝置之光束加工方法。In the method of performing beam processing on the surface transfer, a method of using a broom beam is known. In this case, even if the foot lens is used, the substrate is not irradiated with a beam at a right angle, and the beam is obliquely irradiated to the substrate. At this time, the difference between the refractive index of the plate 2 and its air and the angle of the human beam are generated by the addition of the base (the fourth) to the opposite side of the added layer, and the processing is performed with a high precision. Here, it is extremely difficult to control the irradiation position of the control beam by the current mirror sweep or the like. According to the present invention, the beam is bundled, #0 & the substrate can be as close as possible to the vertical incident light of a very high 4 1 ... point, the degree of ice, so the precision - face 5th beam can be performed The processing method is to apply the axially-collected light to the surface-formed layer formed on the substrate processing layer, which is formed on the other surface side opposite to the processed layer on which the substrate facing the substrate is formed: ...the board of the processed layer is interposed, and the surface-processed layer is described by the above-mentioned axial-shaped light-collecting beam. In the light beam processing method described in item 6 of the patent application scope, the beam processing method described in claim 6 is formed by irradiating a light beam on a processed layer on one side of the substrate, and is formed from the image forming method. One of the processed layers is faced upward, and the substrate is supported from the lower side, and the lower surface of the substrate opposite to the surface on which the processed layer is formed is irradiated with the axially-shaped light collecting beam. The substrate is interposed, and the processed layer is processed by the axially shaped light beam, and is sucked and removed from the upper side of the substrate. The powder generated by processing the light beam of the processed layer is described. In the invention described in the sixth paragraph of the patent application, the same effects as those of the invention described in the second aspect of the application can be obtained. The beam processing substrate according to the seventh aspect of the invention is the processing layer processed by the beam processing apparatus according to any one of claims 1 to 4. In the invention described in the seventh aspect of the patent application, the same effects as those of the invention described in any one of the first to fourth aspects of the application of the patent application can be obtained. Advantageous Effects of Invention According to the beam processing apparatus, the beam processing method, and the beam processing substrate of the present invention, by using a Besso beam having a deep depth of focus, the substrate is suspended by the left side edge, and the processed layer is made lower. In the state, even if the substrate is deflected by its own weight, it is not necessary to adjust the focus of the light beam when the substrate is changed. In other words, in the state where the substrate is deflected, it is not necessary to move the focus with the irradiation position of the light beam, and the autofocus mechanism can be omitted from the beam processing device, thereby reducing the cost and simplifying the structure of the beam processing device. And the control of autofocus does not require time to shorten the guard time. Brief Description of the Drawings 12 201006597 Fig. 1 is a plan view showing the outline of a light beam adding device according to a first embodiment of the present invention. Fig. 2 is a front view showing the outline of the beam processing device. Fig. 3 is a side elevational view showing the outline of the above-described beam force division device. Fig. 4 is a plan view showing the outline of a beam processing apparatus according to a second embodiment of the present invention. Φ Fig. 5 is a cross-sectional view showing the outline of a beam processing apparatus according to a second embodiment. Fig. 6 is a plan view showing the outline of a beam processing apparatus according to a third embodiment of the present invention. Fig. 7 is a front elevational view showing the outline of a beam processing apparatus according to a third embodiment. Fig. 8(a) and Fig. 8(d) are diagrams for explaining the beam directing method of the third embodiment. Fig. 9(4) to Fig. 9(b) are schematic views showing a beam processing apparatus according to a fourth embodiment. ~ Fig. 1 is a schematic view showing a beam processing vibration of the fourth embodiment. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the third embodiment of the present invention will be described with reference to the accompanying drawings. Fig. 1 to Fig. 3 are views showing a schematic configuration of a beam processing apparatus according to a first embodiment of the present invention. 13 201006597 The beam processing device of this example is suitable for manufacturing a thin film layer formed on a transparent substrate such as a glass substrate by a light beam (here, a laser beam) using a photovoltaic system or a plasma display. The thin film layer (the processed layer) on the substrate is irradiated with a laser beam to be sublimated, liquefied, and peeled off, thereby forming a groove, and the film layer is separated and broken by the groove, so that the film layer can be formed. Any shape of the person 'here' in the film will form a stripe & - matrix shape. In this case, the final product will be described as a case of using the above-mentioned power generation system of amorphous germanium. In the above-mentioned power generation system and system φ of the amorphous stone, since a strong voltage cannot be obtained, a plurality of batteries are formed in a stripe shape on a transparent substrate such as a glass substrate, and this is connected in series to output necessary The voltage. At the time of manufacture, first, since sunlight is used from the side of the glass substrate, a film of a transparent electrode is formed on the side of the glass substrate. The film of the transparent electrode is formed into a groove at a predetermined interval to form a stripe-shaped transparent electrode. Next, an amorphous tantalum film as a semiconductor element for photoelectric conversion is formed on the transparent electrode. In addition, this portion serves as a semiconductor element having a PN junction or a PIN junction. An amorphous germanium layer composed of a plurality of layers is formed as a photoelectric conversion layer on the thin film layer patterned into a stripe-shaped transparent electrode, and then a trench is formed by a laser beam. Further, the groove is formed adjacent to a groove formed in the thin film layer of the transparent electrode. Next, a thin film layer of a metal electrode is formed, and similarly, a groove is formed by a laser beam. At this time, the groove of the metal electrode is formed adjacent to the groove formed in the non-曰14 201006597 矽 layer, and at the same time, the groove formed on the transparent electrode adjacent to the groove formed in the amorphous layer is on the opposite side. The ditch of the amorphous bismuth layer is adjacent. In other words, the grooves of the respective layers are formed in a state in which the grooves of the transparent electrode layer, the grooves of the amorphous layer, and the grooves of the metal electrode layer are arranged adjacent to each other. The beam processing apparatus of the present invention is used for forming the grooves of the above respective films. As shown in FIGS. 1 to 3, the beam processing apparatus has a substrate moving mechanism 5 that supports the left and right side edges of the glass substrate 2 (substrate) 5 so as to be transportable in a transport direction (including a reverse direction). A light beam is irradiated onto the processed layer 3 on one surface of the glass substrate 2, and the beam processed by the processed layer 3 is irradiated to the mechanism 50. The substrate moving mechanism 5 is constituted by a driving mechanism (not shown) which is not shown in the drawing and which is held by the left and right side edge portions of the holding glass substrate 2, and which moves the holding slider portion along the guide rails 5a and 5a. Further, the drive mechanism is a mechanism such as a ball screw, a metal wire, a linear motor or the like which can generally be used to move the workpiece in one direction. The beam irradiation mechanism 50 has a laser light source device or the like in this example, and a laser generation unit (not shown) for generating a laser, and an optical system for irradiating the glass substrate 2 with a laser beam. The light source device may use at least one of a YAG laser, a C02 laser, another gas laser, a solid laser, a semiconductor laser, a liquid laser, a fiber laser, a thin disk laser, and the like as a laser. Here, the visible light laser uses a YAG laser having a wavelength of 532 nm. Further, the YAG laser has a wavelength of substantially 〇64 nm, and a technique of 532 nm is known, and the 532 nm visible light can efficiently penetrate the substrate. 15 201006597 In addition, the light source device is not limited to the YAG laser user, and the wavelength of the laser beam is not limited to 532 nm. The laser beam needs to pass through the wavelength of the substrate having the processed layer of the glass substrate 2, etc. In a substrate that is light and does not easily penetrate electromagnetic waves other than the visible light region, a beam of visible light is preferably used. Moreover, the beam of the processed layer 3' should be efficiently absorbed, and the beam can be efficiently processed. The wavelength of the electromagnetic wave of the beam needs to be easily penetrated by the substrate (absorption rate is low), and is easily absorbed by the processed layer 3. wavelength. When the substrate is transparent and the processed layer 3 is a transparent electrode, it can also be selected as visible light 'with no attraction peak on the substrate side', and has a wavelength of attraction peak value on the transparent electrode side, and can also be selected in the visible light region and its periphery. In the region, the near-infrared region, and the near-ultraviolet region, the substrate side is easily penetrated, and the wavelength on the side of the processed layer 3 is not easily transmitted. ' Again, the laser beam should be pulsed. Further, the optical system of the beam irradiation mechanism 5 has an objective optical device 51 that illuminates the light beam with the focal point of the objective optical device 51 collecting or aligning the image on the processed layer. In the present invention, the object optical device 51 uses a rotating triplet (axial optical collecting element optical element 52) for irradiating a Bezo beam as an axially shaped light beam. The three-turn rotation is a general term for an optical element capable of forming a Bezo beam, and a person having an annular slit or a ring shape is known in addition to the conical lens. A conical lens is used in this example. The shaft-shaped light collecting optical device (the vehicle-shaped light collecting optical element 52) of the pair of object optical devices 51 is not limited to the rotation of the optical element. It is also known that the optical element or the 16-dimensional element is used for the diffraction optical element or the 16 201006597 For the collection of light, it is also possible to use the rotating prisms 0 1 optical 1 piece 'output shaft beam. Further, the objective optical device 51 has a plurality of axial light collecting optical elements 52' and can simultaneously illuminate a plurality of axially shaped light beams. For example, as shown in FIG. 3, the plurality of axial light collecting optical elements 52 are arranged in a state parallel to the transport side B of the glass substrate 2 and arranged in a direction perpendicular to the moving direction of the objective optical device 51. In addition, in the objective optical device 5, the front end of the axial light collecting optical element 52 of the second figure and the third figure has a conical optical shape, and has a function of rotating three turns. Since each of the axial light collecting optical elements 52 has a small diameter, it is possible to reduce the size of the objective optical device 51 by using a general lens for collecting light. The objective optical device 51 is movable on the glass substrate 2 in a state in which the direction perpendicular to the direction in which the glass substrate 2 is perpendicularly conveyed is guided by the guide rail 53. Further, the objective optical device 51 can be moved back and forth along the guide rail 53 by a driving device not shown. In this case, the same driving mechanism as that of the substrate moving mechanism 5 of the glass substrate 2 may be used as the driving device. Further, the beam guiding position moving mechanism is constituted by the guiding track 53 and the driving means. A mirror or a prism is applied to the supply of the laser beam of the objective optical device 51, and the laser is irradiated toward the objective optical device 51 from the side of the light source device, so that the irradiation direction of the light beam is directed toward the glass substrate 2 side by the object optical device 51, and The glass substrate 2 is irradiated with a light beam. For example, a state in which a laser is irradiated along the above-described guide rail 53 by a light source device by a mirror or a prism is used to illuminate the objective optical device 51 moving along the guide track 53 in a state of being irradiated with a laser. Further, it is also a structure in which the laser is irradiated to the objective optical device 51 via the light 17 201006597. Further, each of the pair of optical devices 51 can adjust the focus position, such as a change in height position, without setting the auto focus function, and in the laser processing after adjusting the focus position once, there is no need to automatically change the laser beam. focus. The beam processing method using the beam processing device as above is used.

在此例中,如上述,將本發明應用於使用非晶質石夕之 前述發電系統之製造,每當於玻璃基板上形成透明電極 層、光電轉換層、金屬電極層,便進行光束加工。 在光束加工中’於基板移動機構5保持玻璃基板2之左 右側緣部’可在以左右側緣部懸吊玻璃基板2之狀態下,於 搬送方向移動。 此時’玻璃基板2因自身重量而撓曲。 又,將玻璃基板2放置於基板移動機構5時,使上述透 明電極層、光電轉換層、金屬電極層等被加工層3成為下In this example, as described above, the present invention is applied to the production of the above-described power generation system using amorphous stone, and the beam processing is performed every time a transparent electrode layer, a photoelectric conversion layer, and a metal electrode layer are formed on a glass substrate. In the beam processing, the left and right edge portions of the glass substrate 2 are held by the substrate moving mechanism 5, and the glass substrate 2 can be suspended in the transport direction while the glass substrate 2 is suspended by the left and right side edges. At this time, the glass substrate 2 is deflected by its own weight. Further, when the glass substrate 2 is placed on the substrate moving mechanism 5, the processed layer 3 such as the transparent electrode layer, the photoelectric conversion layer, and the metal electrode layer is made lower.

侧。即,玻璃基板2之形成有被加工層3之—面朝向下側, 另一面朝向上側。 然後,玻璃基板2以基板移動機構5於與上述對物光學 51之移動方向垂直相交之搬送方向搬送。 玻璃之作為搬送方向前端側之端部到達對物光學 裝置51之光束加讀料,便停止麵基板2之搬送。 在輸出雷射(貝索光束)之狀態下,使對物光學裝置51 沿引導軌道53從被加工層3之—側续5 、side. That is, the surface of the glass substrate 2 on which the layer to be processed 3 is formed faces the lower side, and the other surface faces the upper side. Then, the glass substrate 2 is transported by the substrate moving mechanism 5 in a transport direction perpendicular to the moving direction of the objective optical 51. The end of the glass as the end portion on the leading end side in the conveying direction reaches the beam of the object optical device 51, and the conveyance of the surface substrate 2 is stopped. In the state where the laser (besof beam) is output, the objective optical device 51 is continued along the guide track 53 from the side of the processed layer 3,

Mi 氣緣至另—侧緣於一方向 移動,而形成溝,呈以溝將被加工層3分割斷裂之狀態。 18 201006597 此時,藉同時照射複數貝索光束,而隔著相互設定之 間隔,而同時形成複數溝。 立進行此光束加工時,玻璃基板2有在左右側緣部及中央 P繞曲數mm左右以上之狀態之可能性。對此,由於貝索光 束之焦點深度亦可為數咖左右以上者,故可使玻璃基板2 ^曲引起之被加項3之上下高度位置的偏離在光束之 ”、、點深度内。The air edge of the Mi to the other side moves in one direction, and the groove is formed, and the groove is used to divide and fracture the layer 3 to be processed. 18 201006597 At this time, a plurality of Bezo beams are simultaneously irradiated, and a plurality of grooves are simultaneously formed by the mutually set intervals. When this beam processing is performed, the glass substrate 2 may have a state in which the right and left side edge portions and the center P are wound by about several mm or so. On the other hand, since the depth of focus of the Besso beam can be about several tens or more, the deviation of the upper and lower height positions of the additive 3 caused by the glass substrate 2 can be made within the depth of the beam.

藉此’即使在麵基板因自身重而撓曲之狀態下,在 狀‘St置Μ移動中,亦不需進行對焦,而可對呈撓曲 “ ^ 口工層3在焦點深度之範圍内進行光束加工。 束強二卜大:时光束,對作為焦點距離之位置、亦即光 二被加工層3之位置上下偏離時,光束之 ==光束在其截面在焦點深度之範圍内, 、、 之特性,作為峰值之部份之徑若在隹點,- 度範圍内,便不致大幅變化。 、工右在焦、點冰 即,貝索光束呈於軸上集光之狀態, 光束之旋轉三稜鏡,即使被加工物於遠近方^輸出貝索 若在焦點深度範圍内,力α精確度便微移動, 深度内且光束之強度在預定以上_ ’在焦點 使被加工層3之上下位置稍微變動圍有破加工層辦,即 藉此,最後製造前述_^=加工精確度。 之提高,可謀求發電效率之提高。即=加工精確度 之提高,可在以加工物構成之裝置等,課^求加工精確度 又’為將複數旋轉三稜鏡配‘=高门 19 201006597 時照射複數雷射之結構時,各旋轉三稜鏡有對象之位置偏 離’或在玻璃基板之複數雷射之照射位置撓曲或彎曲等, 對物光學裝置51之各旋轉三稜鏡與玻璃基板2間之距離有 不同,若在貝索光束之焦點深度之範圍内時,不與加工精 嫁度降低相關,而可以充分之加工精確度進行光束加工。 精此’在保持足夠之加工精確度下,可增加同時照射之光 束數’而可謀求加工時間之大幅縮短。 接著,參照第4圖及第5圖,說明本發明之第2實施形態。 此外,第2實施形態係變更第1實施形態之基板移動機 構者,光束照射機構50基本上係與第1實施形態相同者。是 故,將光束照射機構50之說明省略或簡單化,主要就基板 移動機構5作說明。 基板移動機構5具有藉喷出氣體,支撐成使前述基板平 坦飄浮之狀態之氣體飄浮機構1〇,氣體飄浮機構1〇具有喷 出氣體之氣體喷出機構(氣體噴出板12等),且具有使前述基 板飄浮成平坦之狀態而支撐之台u及使前述玻璃基板2在 前述台11至少於一方向移動之移動機構。 即,氣體飄浮機構10具有為板狀,並且沿後述玻璃基 板2之搬送方向長形延伸之台u、配置成大致均等地散布在 台11上之複數個軋體噴出板12、配置於台丨丨之兩侧部,卡 合於玻璃基板2之左右兩側部,並且將玻璃基板2沿一搬送 方向搬送之移動機構14。 前述台11基本為板狀,舉例言之,亦可由沿搬送方向 延伸之複數板體开>成條紋狀之結構。又,台u呈在沿著光 20 201006597 束照射機構50之後述對物光學裝置51之搬送方向之線狀I 射光束照射位置之部份,分割成搬送方向之雷射光束照射 位置之後側(近側)、前側(遠側)之狀態,於此後側之台j ia 與前側之台11 b間形成為縫隙狀間隔之縫隙部11 c。 此縫隙部11c呈將後側台11a與前側台lib分割之狀 態’形成於該等台11a與台lib間。此外,亦可在不將Αΐι 分割為二’於雷射光束照射位置設置縫隙狀開口部,將此 作為縫隙部。 於台11配置上述氣體喷出板12。 又,氣體噴出板12由多孔質性陶瓷板構成,或者由設 有許多孔之金屬板或樹脂板構成。 氣體噴出板12之裡面側除了該氣體噴出板12側外,安 裝構成密封狀態之圖中未示之容器狀裡構件’連接供給壓 縮氣體之配管,於此配管連接為壓縮氣體供給機構之壓縮 機、氣體鋼瓶,以供給壓縮氣體。 由此氣體喷出板12、將壓縮氣體供給至該氣體喷出板 12之壓縮氣體供給機構、連接該壓縮氣體供給機構與氣體 喷出板12間之配管等形成氣體喷出機構。 此外’壓縮氣體使用空氣或氮氣等,宜使用不對加工 之被加工層3造成影響之氣體,諸如因氧使被加工層〗氧化 時,宜使用氮氮等惰性氣體。 又,在氣體喷出板12中,亦可為具有喷出氣體之喷出 口與吸引氣體之吸引口之結構或除了氣體喷出板以,還設 置氣體吸弓丨板15之結構。 & 21 201006597 此為藉進行氣體之噴出與氣體之吸引,同時,控制氣 體喷出1與氣體吸弓丨量之至少—者,控制成將呈飄浮狀態 之玻璃基板2之尚度保持一定的結構。 僅嘴出氣體’即可以氣體之噴出量調節玻璃基板2之飄 浮南度至某程度’在以高精確度且迅速地控制玻璃基板2之 飄浮南度方面,因不僅噴出氣體,亦同時進行吸引,而當 玻璃基板2往上移動時’不單使氣體之喷出量減少,且藉吸 引氣體’可使玻璃基板2迅速返回下方。 此時,氣體喷出板12與氣體吸引板15宜分散配置成錯 開。亦可為氣體吸引板15較氣體噴出板π少之結構。又, 宜於玻璃基板2之光束加工位置附近之部份不配置氣體吸 引板15’俾使氣體吸引板15不吸引光束加工時產生之粉體。 此外,在本發明中,如後述,亦可於作為雷射照射位 置之縫隙部11c具有吸引因雷射光束加工而產生之粉體之 後述吸引機構13,控制此吸引機構13之氣體之吸引量與配 置於雷射照射位置附近之氣體喷出板12之氣體噴出量,將 雷射照射位置之玻璃基板2之高度保持約略一定。 此外,在使用氣體之喷出及吸引之玻璃基板2之高度調 整上’在作為雷射照射位置之直線上之部份或其附近,測 量玻璃基板2之高度位置(例如朝向下側之面之高度的位 置),依作為該測量結果之玻璃基板2之高度,控制成調節 氣體之喷出量與氣體之吸引量。基本上,當玻璃基板2之高 度位置為上升傾向後,減少氣體之噴出量,增加氣體之吸 引量。當形成下降傾向後,增加氣體之喷出量,減少氣體 201006597 之吸引量。 移動機構14係卡合於玻璃基板2之左右側緣部,使玻璃 基板2於搬送方向移動者。此外,移動方法可為如滾珠螺桿 機構者、使用金屬線者、使用線性馬達者等一般使被加工 物於一方向移動之機構。即,可為與第丨實施形態之基板移 動機構5相同之結構,由於玻璃基板2呈藉具有前述台丨丨之 氣體飄浮機構10飄浮之狀態,故為移動機構14不需將玻璃 基板2完全保持在懸吊之狀態,而保持在可於搬送方向推或 拉之程度之構造即可。 於前述台11設有在光束照射機構50之光束照射位置之 後述移動範圍,吸引因前述被加工層3之光束照射之加工而 產生之粉體之粉體去除機構16。粉體去除機構16具有設置 於上述台11之縫隙部11c、設置於縫隙部11c,吸引粉體之 吸引機構13。即,缝隙部11c係形成為用以吸引粉體而將之 去除者,為粉體去除機構16之一部份。 吸引機構13具有配置於縫隙部11c内之吸引口 13a、用 以進行吸引之壓縮機、連接該壓縮機與吸引口 13a之配管、 設置於該配管途中,用以進行固氣分離(粉體分離)之旋風裝 置(省略圖式)。 吸引口 13a在前述縫隙部11c,於縫隙部11(;之長度方 向、亦即與玻璃基板2之搬送方向垂直相交之方向排列設置 複數個。 在吸引口 13a吸引之粉體或者是成為粉體前之昇華氣 體或已液化者(在吸引中成為固體)、剝離物以壓縮機吸引, 23 201006597 而到達旋風裝置。 旋風裝置係幕所周知之粉體分離用旋風器,以螺旋狀 氣流將固體從氣體離心分離,幾乎僅排出氣體。此氣體到 達壓縮機。 又,以旋風器回收之固體再利用或廢棄。 又’光束照射機構50使用與上述第i實施例相同者。 · 說明使用以上之第2實施形態之光束加工裝置之光| 加工方法。 在第2實施形態中,將本發明應驗如上述制非晶f ❹ 矽之前述發電系統之製造。 在光束加工,使用具有與前述氣體飄浮機構1〇相同之 氣體飄浮機構ίο的搬送路徑,將玻璃基板2搬入至光束加工 - 裝置。此時,以雷射光束加工之被加工層3成為玻璃基板2 - 之下側。即,玻璃基板2呈以形成有被加工層之面為下,在 氣體飄浮機構10之台11上稍微飄浮之狀態。玻璃基板2在光 束加工裝置中,在氣體飄浮機構1〇之台〗丨上連接於移動機 _ 構14 ’於與對物光學裝置51之移動方向垂直相交之搬送方 向搬送。 玻璃基板2之作為搬送方向前端侧之端部到達台11之 上述縫隙部11c,形成於玻璃基板2之被加工層3(例如透明 電極)之溝形成位置到達支撐於引導軌道53之對物光學裝 置51時,便停止搬送。 在輸出雷射(貝索光束)之狀態下,使對物光學裝置51 〜弓丨導軌道53從被加工層3之一側緣至另一側緣於一方向 24 201006597 移動,而形成溝,呈以溝將被加工層3分割斷裂之狀態。 此時,使粉體去除機構16之吸引機構13作動,從設置 於對物光學裝置51之移動範圍下側之缝隙部11c吸引配置 於其上側之玻璃基板2之被加工層3側之氣體。藉此,因照 射雷射光束而已昇華之被加工層3之氣體或粉體為吸引機 構13所吸引。Therefore, even in the state in which the surface substrate is deflected due to its own weight, it is not necessary to perform focusing in the shape of the "St" movement, but the deflection "^ the mouth layer 3 is within the range of the depth of focus. Beam processing: Beam intensity: When the beam is deflected up and down as the position of the focal distance, that is, the position of the light-processed layer 3, the beam == the beam is within the depth of focus of the section, The characteristic, as a part of the peak, is not greatly changed within the range of 隹, - degrees. The right is in focus, the point is ice, the Besso beam is in the state of collecting light on the axis, and the rotation of the beam Three 稜鏡, even if the processed object is in the far and near direction ^ If the Besso is within the depth of focus, the force α precision will move slightly, and the intensity of the beam will be above the predetermined depth _ 'Below the focus on the layer 3 to be processed When the position is slightly changed, the broken processing layer is arranged, and finally, the above-mentioned _^=machining accuracy is improved, and the power generation efficiency can be improved. That is, the processing accuracy can be improved, and the device can be formed by processing. Wait, class ^ seek processing accuracy and When the structure of the complex laser is irradiated for the purpose of rotating the complex three-turned =[=高门19 201006597, each of the three rotating objects has a positional deviation of 'the object or deflects or bends at the irradiation position of the plurality of lasers on the glass substrate. For example, the distance between each of the rotating optical elements 51 of the objective optical device 51 and the glass substrate 2 is different, and if it is within the range of the depth of focus of the Besso beam, it is not related to the reduction of the processing precision, and can be sufficiently processed. Accurate beam processing. In this case, the number of beams irradiated at the same time can be increased while maintaining sufficient processing accuracy, and the processing time can be greatly shortened. Next, the present invention will be described with reference to FIGS. 4 and 5. In the second embodiment, the substrate moving mechanism of the first embodiment is changed, and the light beam irradiation unit 50 is basically the same as that of the first embodiment. Therefore, the description of the light beam irradiation unit 50 is omitted or The simplification is mainly described with respect to the substrate moving mechanism 5. The substrate moving mechanism 5 has a gas floating mechanism 1 that supports a state in which the substrate is flatly floated by ejecting gas. The body floating mechanism 1 has a gas ejecting mechanism (such as a gas ejecting plate 12) that ejects a gas, and has a stage u that supports the substrate floating in a flat state, and the glass substrate 2 is at least one of the stage 11 In other words, the gas floating mechanism 10 has a plate-like shape, and a table u that extends in the direction in which the glass substrate 2 is described later, and a plurality of rolling body discharge plates that are disposed to be evenly spread on the stage 11 12. The moving mechanism 14 is disposed on both sides of the table and is engaged with the left and right sides of the glass substrate 2 and transports the glass substrate 2 in a transport direction. The stage 11 is substantially plate-shaped, for example, Alternatively, the plurality of plates extending in the conveying direction may be in a stripe-like structure. Further, the table u is in the direction of the traveling direction of the object optical device 51 after the beam irradiation mechanism 50 along the light 20 201006597 The portion of the beam irradiation position is divided into a state of the rear side (near side) and the front side (distal side) of the laser beam irradiation position in the transport direction, and a gap is formed between the table j ia on the rear side and the table 11 b on the front side. between The slit portion 11 c. The slit portion 11c is formed between the stages 11a and the table lib in a state in which the rear side table 11a and the front side table lib are divided. Further, a slit-shaped opening portion may be provided at a position where the laser beam is not irradiated, and the slit portion may be provided as a slit portion. The gas ejecting plate 12 is disposed on the stage 11. Further, the gas ejection plate 12 is made of a porous ceramic plate or a metal plate or a resin plate provided with a large number of holes. On the inner side of the gas discharge plate 12, in addition to the side of the gas discharge plate 12, a container-shaped inner member (not shown) which is in a sealed state is attached, and a pipe for supplying a compressed gas is connected, and the pipe is connected to a compressor of a compressed gas supply mechanism. , gas cylinders to supply compressed gas. The gas ejecting plate 12, a compressed gas supply means for supplying compressed gas to the gas ejecting plate 12, a pipe connecting the compressed gas supply means and the gas ejecting plate 12, and the like form a gas ejecting means. Further, it is preferable to use a gas which does not affect the processed layer 3 to be processed, such as air or nitrogen, for the compressed gas. For example, when the layer to be processed is oxidized by oxygen, an inert gas such as nitrogen or nitrogen is preferably used. Further, the gas ejecting plate 12 may have a structure in which a discharge port for ejecting gas and a suction port for attracting gas are provided, or a gas suction plate 15 may be provided in addition to the gas ejecting plate. & 21 201006597 This is to control the gas ejection 1 and the gas suction at least at the same time, and control the gas ejection 1 to maintain the temperature of the glass substrate 2 in a floating state. structure. Only the gas out of the mouth can adjust the floating southness of the glass substrate 2 to a certain degree, in order to control the floating southness of the glass substrate 2 with high precision and rapidity, because not only the gas is ejected, but also the attraction is simultaneously performed. When the glass substrate 2 is moved upwards, not only does the amount of gas ejection decrease, but the glass substrate 2 can be quickly returned to the lower side by the attraction gas. At this time, it is preferable that the gas ejection plate 12 and the gas suction plate 15 are dispersedly arranged to be shifted. It is also possible to have a structure in which the gas suction plate 15 is smaller than the gas ejection plate π. Further, it is preferable that the gas suction plate 15' is not disposed in a portion near the beam processing position of the glass substrate 2 so that the gas suction plate 15 does not attract the powder generated when the beam is processed. Further, in the present invention, as will be described later, the suction portion 13 which attracts the powder generated by the laser beam processing in the slit portion 11c as the laser irradiation position, and the suction amount of the gas of the suction mechanism 13 can be controlled. The height of the glass substrate 2 at the laser irradiation position is kept approximately constant with the amount of gas discharged from the gas ejection plate 12 disposed near the laser irradiation position. Further, the height position of the glass substrate 2 is measured at or near the portion on the straight line as the laser irradiation position by the height adjustment of the glass substrate 2 for ejecting and sucking the gas (for example, toward the lower side) The height position is controlled to adjust the amount of gas to be ejected and the amount of gas to be attracted, depending on the height of the glass substrate 2 as a result of the measurement. Basically, when the height position of the glass substrate 2 is rising, the amount of gas ejected is reduced, and the amount of gas suction is increased. When a tendency to fall is formed, the amount of gas ejected is increased to reduce the amount of attraction of the gas 201006597. The moving mechanism 14 is engaged with the left and right side edge portions of the glass substrate 2 to move the glass substrate 2 in the transport direction. Further, the moving method may be a mechanism such as a ball screw mechanism, a wire user, or a linear motor, which generally moves the workpiece in one direction. That is, it is possible to have the same configuration as the substrate moving mechanism 5 of the second embodiment. Since the glass substrate 2 is floated by the gas floating mechanism 10 having the above-described stage, the moving mechanism 14 does not need to completely complete the glass substrate 2. It can be held in a suspended state and maintained in a structure that can be pushed or pulled in the conveying direction. The stage 11 is provided with a powder removing mechanism 16 for attracting a moving range of the light beam irradiation position of the light beam irradiation unit 50, and sucking the powder generated by the processing of the light beam of the processed layer 3. The powder removing mechanism 16 has a slit portion 11c provided in the stage 11, and a suction mechanism 13 provided in the slit portion 11c to attract the powder. That is, the slit portion 11c is formed to attract the powder and remove it, and is a part of the powder removing mechanism 16. The suction mechanism 13 has a suction port 13a disposed in the slit portion 11c, a compressor for suction, a pipe connecting the compressor and the suction port 13a, and is disposed in the pipe for solid-gas separation (powder separation) Cyclone device (omitted from the figure). The suction port 13a is arranged in plural in the longitudinal direction of the slit portion 11c, that is, in a direction perpendicular to the direction in which the glass substrate 2 is conveyed. The powder attracted to the suction port 13a is powdered. The former sublimation gas or liquefied gas (solidified in the suction), the stripper is attracted by the compressor, 23 201006597 and reaches the cyclone device. The cyclone device is known as a cyclone for powder separation, and the solid is spiraled The gas is almost separated from the gas, and the gas is discharged to the compressor. The solid recovered by the cyclone is reused or discarded. The beam irradiation mechanism 50 is the same as the above-described first embodiment. The light processing method of the beam processing apparatus according to the second embodiment. In the second embodiment, the present invention is directed to the manufacture of the above-described power generation system of the above-described amorphous material, which is used for beam processing. The transport path of the same gas floating mechanism ίο is carried out by the mechanism, and the glass substrate 2 is carried into the beam processing device. At this time, the laser light is used. The processed layer 3 is formed on the lower side of the glass substrate 2 - that is, the glass substrate 2 is placed on the stage 11 of the gas floating mechanism 10 with the surface on which the layer to be processed is formed, and the glass substrate 2 is in a state of being floated. In the beam processing device, the gas floating mechanism 1 is connected to the moving device 14' in a transport direction perpendicularly intersecting the moving direction of the objective optical device 51. The glass substrate 2 serves as a front end side in the transport direction. When the end portion reaches the slit portion 11c of the stage 11, the groove forming portion formed on the processed layer 3 (for example, the transparent electrode) of the glass substrate 2 reaches the objective optical device 51 supported by the guide rail 53, and the conveyance is stopped. In the state of outputting the laser (Beso beam), the objective optical device 51 to the bow guide track 53 are moved from one side edge of the processed layer 3 to the other side edge in a direction 24 201006597 to form a groove. In the state in which the processed layer 3 is divided and fractured by the groove, the suction mechanism 13 of the powder removing mechanism 16 is actuated, and is suctioned and disposed on the upper side of the slit portion 11c provided on the lower side of the moving range of the objective optical device 51. 3 the gas side of the glass substrate 2 of the processing layer. Thereby, the laser beam is irradiated because it is a gas or sublimation of the powder layer 3 of the processing mechanism 13 for attracting attracted.

如此,即使因雷射光束加工產生粉體,不致因粉體喷 出之氣體而飛散,污染光束加工裝置或其周圍,而可保持 乾淨狀態。 又,在台11與玻璃基板2分隔些微距離之狀態、換言之 為台11與玻璃基板2靠近之狀態下,可吸引從台11之縫隙部 11c朝向玻璃基板2之縫隙部11c側之被加工層3產生之被加 工層3之氣體或粉體,故可有效率地吸引該等氣體或粉體。 即,可確實地去除粉體。 接著,以移動機構14搬送玻璃基板2,至下個溝形成位 置為雷射光束照射位置為止,便停止。 然後,一面輸出雷射光束,一面使對物光學裝置51沿 引導軌道於與前次雷射照射時之移動方向相反之方向移 動,於被加工層3形成溝。 藉反覆進行以上之操作至於被加工層3之要溝加工之 所有部份形成溝為止,而形成對應於1個被加工層3之溝。 接著,於被加工層3上形成下個被加工層3後,再進行上述 光束加工。 然後,如上述,形成透明電極層、光電轉換層(非晶質 25 201006597 :層)、金屬電極層,同時,於該等所有層以光束加工形成 溝。藉此’可製造於玻璃基板上分割成複數個電池, 合成串聯之前述發電系統。 此時’由於玻璃基板2以料之氣體呈飄浮之狀態而不 撓曲’故因使雜點深度深之之相乘效果,可進行高精 =度之加I。因使同時照射之光束數增多,料光束^構 ,之焦點仇置偏離或因玻璃基板之位置引起之厚度不同或 , 在各光束,焦點各略為不同,該等可在貝索光束Thus, even if the powder is produced by the laser beam processing, it does not scatter due to the gas ejected from the powder, and pollutes the beam processing device or its surroundings to maintain a clean state. Further, in a state where the stage 11 is separated from the glass substrate 2 by a slight distance, in other words, the stage 11 and the glass substrate 2 are close to each other, the processed layer from the slit portion 11c of the stage 11 toward the slit portion 11c side of the glass substrate 2 can be attracted. 3 The gas or powder of the layer to be processed 3 is produced, so that the gas or powder can be efficiently attracted. That is, the powder can be surely removed. Next, the glass substrate 2 is transported by the moving mechanism 14, and is stopped until the next groove forming position is the laser beam irradiation position. Then, while the laser beam is output, the objective optical device 51 is moved along the guide track in a direction opposite to the moving direction of the previous laser irradiation, and a groove is formed in the processed layer 3. By repeating the above operations, all the portions of the processed layer 3 to be grooved are formed into grooves, and grooves corresponding to one of the processed layers 3 are formed. Next, after the next processed layer 3 is formed on the layer to be processed 3, the above-described beam processing is performed. Then, as described above, a transparent electrode layer, a photoelectric conversion layer (amorphous 25 201006597 : layer), a metal electrode layer are formed, and at the same time, grooves are formed by beam processing in all of the layers. Thereby, it can be manufactured by dividing a plurality of cells on a glass substrate, and synthesizing the above-described power generation system in series. At this time, since the glass substrate 2 is in a state in which the gas of the material is floating, it is not deflected. Therefore, since the effect of multiplying the depth of the impurity is deep, the addition of high precision = I can be performed. Because the number of beams irradiated at the same time increases, the beam of the material beam is deviated from the focus or the thickness caused by the position of the glass substrate is different or the focus is slightly different in each beam, and the beam can be in the Besso beam.

之焦點深度之範圍内。 藉此即使同時照射之光束數增加,亦可維持或提高 加工精確度。 门 又,由於作為產生貝索光束之旋轉三稜鏡之圓錐形透 鏡(轴狀集光用絲元件52)為小型,故藉增加_形透鏡, 曰加光束數時,可防止具有圓錐形透鏡之對物光學裝置51 大型化。 從該等,可使同時照射之光束數較習知增加,而謀求進Within the depth of focus. Thereby, the processing accuracy can be maintained or improved even if the number of beams simultaneously irradiated increases. In addition, since the conical lens (the shaft-shaped light collecting wire member 52) which is a rotating triplet which generates the Besso beam is small, the y-shaped lens is added, and when the number of beams is increased, the conical lens can be prevented. The objective optical device 51 is enlarged. From these, it is possible to increase the number of beams that are simultaneously irradiated, and to seek more

步之加工時間之縮短,可謀求以包含光束加工之步驟製造 之製°»、例如前述發電系統或電槳顯示器等成本之刪減。 第6圖及第7圖係顯示本發明第3實施形態之光束加工 裝置之概略結構者。又,第8圖係用以說明照射光束之頭之 移動者。 在此第1及第2實施形態中,在停止玻璃基板2之搬送之 狀態下,進行光束加工,相對於此,在第3實施形態中,在 保持搬送與玻璃基板2相同之基板1〇1之狀態下不停止,進 26 201006597 行光束加工’使光束照射機構之光束照射位置之機構不 同’其他之結構為與第2實施形態大致相同之結構,關於相 同之構成要件,將說明簡單化。 第3實施形態之光束加工裝置可在與第1及第2實施形 態相同之用途使用,且可進行相同之加工,可製造與第1實 施形態同樣地利用光電效果之發電系統。 如第6圖及第7圖所示,光束加工裝置係對形成於基板J 〇1之一面之被加工層102(薄膜層)照射光束103而加工者,具 有將前述基板101於一方向搬送之搬送機構(移動機構)1〇 4、從搬送至該搬送機構1〇4之前述基板1〇1另一面側對形成 於該基板101之一面之被加工層102穿透該基板1〇1,照射光 束103,同時,照射光束時,具有對該基板1〇1垂直地照射 光束之頭101之光束照射裝置111(光束照射機構)、使前述頭 110沿著與以前述搬送機構104搬送之基板ιοί平行之面且 相互交叉之二方向同時移動之頭移動装置12〇。 此例之基板101及基板101之被加工層1〇2為與第1實施 形態相同者。又’搬送機構104係與第2實施形態之氣體飄 浮機構10之移動機構14相同者。又,在第3實施形態中,亦 使用瑕> 體飄浮機構1 〇,使用與第2實施形態之台11相同之台 141 ’藉噴出氣體,使基板101飄浮。 此外,搬送機構104之基板之搬送方向係對於基板ιοί 加工成條紋狀而形成之被加工層1〇2之溝之方向垂直相交 之方向。 即’需將基板101放置於搬送機構104,以相對於要形 27 201006597 成之溝之方向垂直相交來搬送。此外’亦可使用與第1實施 形態相同之基板移動機構5 ’進行基板之搬送。 具有頭110之光束照射裝置I11具有生成雷射之光源裝 置112及從該光源裝置112將雷射引導至頭110之光束引導 系統。 光源裝置112輸出與第1實施形態相同之雷射。 — 此外,在此例中,頭110對被加工層102同時照射複數 - 個雷射光束,設有複數個對物光學裝置113、在此為4個對 φ 物光學裝置113。此外,對應於照射之光束數,在光源裝置 112中亦輸出4個光束。 此外,對物光學裝置113使用與第1實施形態之對物光 學裝置51相同之軸狀集光用光學元件52。 從光源裝置112將雷射引導至頭110之光束引導系統在 此例中以複數個鏡115、116、117、128、129構成。 又,於光束照射裝置111之光束引導系統設置不論頭 110之移動位置為何,將從光源裝置112至頭110之光程長度 保持大致一定之光程長度調整裝置114。 參 在此例中,頭110沿著與為基板101搬送方向之Y軸方向 垂直相交之基板101寬度方向的X轴方向,在基板101之寬度 左右之距離移動,當基板101為大型玻璃基板時,光源裝置 112至頭110之距離因頭110之移動而大幅變化。 在此’從光源裝置112輸出之雷射光束以準直透鏡轉換 成平行光’非完全之平行光,而因繞射等略為擴散,光束 徑逐漸增大。因而’使用鏡,將雷射光束引導至頭11〇時, 28 201006597 頭110為與光源裝置112大幅遠離或靠近之構造而有遠離之 情形及靠近之情形時,入射至對物光學裝置113之雷射光束 之光束徑產生明顯之不同’藉此’產生焦點位置之變動或 光束強度之變動,而妨礙精密之加工。 是故,在此例中,使雷射光束圍繞引導至光程長度調 整裝置114。 此外,前述光束引導系統基本上具有將從光源裝置112 輸出之雷射光束引導至X軸方向之第1鏡115、設置於作為與 頭110 —體地於X軸方向移動,不於Y軸方向移動之部份之 後述X軸滑件122,使來自第1鏡115之雷射光束以沿著γ軸 方向之狀態彎曲9〇度而引導至頭110之第2鏡116即可,在此 例中,於第1鏡115與第2鏡116間之雷射光束之光程設置光 程長度調整裝置114。 此外,在此例中,於使光軸沿Y轴方向配置之光源裝置 112旁邊設置光程長度調整裝置114,以相對於頭110之X軸 方向之移動,調整光程長度,入射至光程長度調整裝置114 之雷射光束與從光程長度調整裝置114射出之雷射光束之 方向非X軸方向,而為Y轴方向。又,不將光程長度調整裝 置114設置在第1鏡115與第2鏡116間,而設置於該等外側且 為第1鏡115側之位置。因而,第1鏡115使從第1鏡15朝向第 2鏡116而沿著X軸方向之雷射光束不朝向第2鏡116側而是 朝向反側反射。 又,具有將從第1鏡115反射之雷射光束從X軸方向彎曲 90度至Y轴方向,而入射至光程長度調整裝置114之第3鏡 29 201006597 128及使從光程長度調整裝置114射出,沿著Y軸方向之雷射 光束於X軸方向彎曲,且反射至第2鏡116之第4鏡129。 於光程長度調整裝置114設有將雷射光束反射輸出至 與被引導而入射之雷射光束之方向平行之方向之鏡117、 117。鏡117、117設置2面,使入射之雷射光束彎曲90度而 反射之鏡117與使該已彎曲之雷射光束再彎曲90度之前述 鏡117共計彎曲180度。因此,可將已入射至雷射光束往與 入射之雷射光束平行之方向反射而返回。此外,入射之雷 射光束之位置及與此平行地反射而射出之雷射光束之位置 參 有錯開,入射之雷射光束依序在光源裝置112侧之第1鏡115 及第3鏡128反射,射出之雷射光束藉由第4鏡129朝向支撐 - 頭110之X軸滑件122之第2鏡116。 又,在此,反射光程長度調整裝置U4之雷射光束之二 面鏡在光程長度調整裝置114中’沿著相互平行入射之雷射 光束與射出之雷射光束之光轴’沿與該等雷射光束平行之 方向、亦即光軸方向移動自如。 馨 即,光程調整褒置114具有搭載前述2個鏡ip、117之 滑件部118、將該滑件部118引導成於前述光轴方向(γ轴方 向)移動自如之軌道部119、使前述滑件部118沿軌道部119 移動之圖中未不之驅動源。此外,驅動源只要為具有可使 帶、金屬線、滾珠螺桿等之旋轉運動轉換成直線運動之傳 動機構的旋轉馬達、線性馬達等使滑動部⑽於直線方向來 回移動者即可。 具有此光程調整裝置114之光束弓!導系統具有將從光 30 201006597 源裝置112輸出之雷射光束引導至x軸方向,並且朝向光程 長度調整裝置H4之前述2面鏡in、117之其中一鏡117之第 1鏡115及第3鏡128、使從光程長度調整裝置114輸出之雷射 光束朝向對物光學裝置113之第2鏡116及第4鏡129。此外, 當為使入射至光程長度調整裝置114之雷射光束及從光程 長度調整裝置114射出之雷射光束為沿著χ軸方向者時,便 . 不需因光程長度調整裝置114,而將雷射光束在γ軸方向與 鲁 抽方向間轉換之第3鏡128及第4鏡129。又,亦可使用角隅 棱鏡、逆向反射鏡等之逆反射取代鏡ιη、117。 又,實際上,在第2鏡II6反射之光以設置於上述對物 ' 光學裝置113之圖中未示之鏡反射至2轴方向,而入射至對 物光學裝置113之對物鏡。 又’在第6圖中僅顯示1個雷射之光程,在此,於z軸方 向隔著間隔,複數、例如4條雷射通過相同之光程,從光源 裝置112引導至對物光學裝置113,以4個對物光學裝置113 φ 轉換成X軸方向。此外,在第2鏡116反射之光中在z軸方向 (鬲度方向)最低之位置之雷射光束入射至最靠近第2鏡116 之對物光學裝置113,以從此雷射光束增高之順序,入射至 距離第2鏡116遙遠之對物光學裝置113。 又’頭移動裝置120具有在略大於沿著為基板1〇1之被The shortening of the processing time of the step can be achieved by cutting the cost of the manufacturing process including the beam processing step, for example, the aforementioned power generation system or the electric paddle display. Fig. 6 and Fig. 7 are views showing a schematic configuration of a beam processing apparatus according to a third embodiment of the present invention. Further, Fig. 8 is a diagram for explaining the movement of the head of the illumination beam. In the first and second embodiments, the beam processing is performed while the glass substrate 2 is stopped. In the third embodiment, the substrate 1〇1 which is the same as the glass substrate 2 is held and conveyed. In the state in which it is not stopped, the processing of the beam processing of the light beam irradiation means is different from the second embodiment. The other components are substantially the same as those of the second embodiment, and the description of the same components will be simplified. The beam processing apparatus according to the third embodiment can be used in the same manner as the first and second embodiments, and the same processing can be performed, and a power generation system using photoelectric effect similarly to the first embodiment can be manufactured. As shown in FIGS. 6 and 7, the beam processing apparatus irradiates the processed layer 102 (thin film layer) formed on one surface of the substrate J 〇1 with the light beam 103, and the substrate 101 is transported in one direction. The transport mechanism (moving mechanism) 1〇4, the other layer side of the substrate 1〇1 transported to the transport mechanism 1〇4 penetrates the substrate 1〇1 by the processed layer 102 formed on one surface of the substrate 101, and is irradiated At the same time, when the light beam 103 is irradiated, the light beam irradiation device 111 (beam irradiation mechanism) that irradiates the light beam head 101 perpendicularly to the substrate 1〇1 is provided, and the head 110 is moved along the substrate ιοί which is transported by the transport mechanism 104. The head moving device 12 is moved simultaneously in parallel with the two sides that cross each other. The substrate 101 and the processed layer 1〇2 of the substrate 101 in this example are the same as those in the first embodiment. Further, the conveying mechanism 104 is the same as the moving mechanism 14 of the gas floating mechanism 10 of the second embodiment. Further, in the third embodiment, the 飘> body floating mechanism 1 亦 is used, and the substrate 101 is floated by using the same 141 ′ as the stage 11 of the second embodiment. Further, the conveyance direction of the substrate of the conveyance mechanism 104 is a direction in which the direction of the groove of the layer to be processed 1 2 formed in a stripe shape by the substrate ιοί is perpendicularly intersected. That is, the substrate 101 needs to be placed on the transport mechanism 104 to be vertically intersected with respect to the direction of the groove formed by the shape of 2010 201006597. Further, the substrate transfer mechanism 5' similar to the first embodiment can be used to transport the substrate. The beam irradiation device I11 having the head 110 has a light source device 112 for generating a laser and a beam guiding system for guiding the laser light from the light source device 112 to the head 110. The light source device 112 outputs the same laser as in the first embodiment. Further, in this example, the head 110 simultaneously irradiates a plurality of laser beams to the processed layer 102, and a plurality of counter optical devices 113, here four φ object optical devices 113, are provided. Further, four light beams are also outputted in the light source device 112 corresponding to the number of beams irradiated. Further, the objective optical device 113 uses the axial light collecting optical element 52 similar to the objective optical device 51 of the first embodiment. The beam guiding system that directs the laser light from the light source device 112 to the head 110 is constructed in this example by a plurality of mirrors 115, 116, 117, 128, 129. Further, the beam guiding system of the beam irradiation device 111 is provided with an optical path length adjusting device 114 that maintains the optical path length from the light source device 112 to the head 110 substantially constant regardless of the moving position of the head 110. In this example, the head 110 moves at a distance of about the width of the substrate 101 in the X-axis direction in the width direction of the substrate 101 perpendicularly intersecting the Y-axis direction of the substrate 101 transport direction, when the substrate 101 is a large glass substrate. The distance from the light source device 112 to the head 110 largely varies due to the movement of the head 110. Here, the laser beam outputted from the light source device 112 is converted into parallel light by the collimator lens as incomplete parallel light, and the beam diameter is gradually increased by diffraction or the like. Therefore, when the laser beam is guided to the head 11 by using the mirror, the head 110 is incident to the objective optical device 113 when it is away from or close to the light source device 112. The beam path of the laser beam produces a distinct difference 'by this' resulting in a change in focus position or a change in beam intensity that impedes precision machining. Therefore, in this example, the laser beam is guided around to the optical path length adjusting device 114. Further, the beam guiding system basically has a first mirror 115 that guides a laser beam output from the light source device 112 to the X-axis direction, and is disposed to move in the X-axis direction integrally with the head 110, not in the Y-axis direction. The X-axis slider 122 will be described later, and the laser beam from the first mirror 115 may be guided to the second mirror 116 of the head 110 by bending 9 degrees along the γ-axis direction. The optical path length adjusting device 114 is disposed in the optical path of the laser beam between the first mirror 115 and the second mirror 116. Further, in this example, the optical path length adjusting means 114 is disposed beside the light source means 112 in which the optical axis is arranged along the Y-axis direction, and the optical path length is adjusted with respect to the movement of the head 110 in the X-axis direction, and incident to the optical path. The direction of the laser beam emitted from the length adjusting device 114 and the laser beam emitted from the optical path length adjusting device 114 is not the X-axis direction but the Y-axis direction. Further, the optical path length adjusting device 114 is not disposed between the first mirror 115 and the second mirror 116, and is disposed on the outer side and at the position on the first mirror 115 side. Therefore, the first mirror 115 causes the laser beam in the X-axis direction from the first mirror 15 toward the second mirror 116 to be reflected toward the opposite side without being directed toward the second mirror 116 side. Further, the laser beam reflected from the first mirror 115 is bent from the X-axis direction by 90 degrees to the Y-axis direction, and is incident on the third mirror 29 201006597 128 of the optical path length adjusting device 114 and the optical path length adjusting device. 114 is emitted, and the laser beam along the Y-axis direction is curved in the X-axis direction and reflected to the fourth mirror 129 of the second mirror 116. The optical path length adjusting means 114 is provided with mirrors 117, 117 for reflecting and outputting the laser beam to a direction parallel to the direction of the laser beam which is guided and incident. The mirrors 117, 117 are provided with two faces, the incident laser beam is bent by 90 degrees, and the mirror 117 for reflection is bent by a total of 180 degrees with the aforementioned mirror 117 which bends the bent laser beam by another 90 degrees. Therefore, the incident laser beam can be reflected and returned in a direction parallel to the incident laser beam. In addition, the position of the incident laser beam and the position of the laser beam which is reflected in parallel and reflected therefrom are staggered, and the incident laser beam is sequentially reflected by the first mirror 115 and the third mirror 128 on the side of the light source device 112. The emitted laser beam is directed by the fourth mirror 129 toward the second mirror 116 of the X-axis slider 122 of the support head 110. Further, here, the dihedral mirror of the laser beam of the reflected optical path length adjusting means U4 is 'in the optical path length adjusting means 114' along the optical axis of the laser beam incident parallel to each other and the optical beam of the emitted laser beam The laser beams move in a direction parallel to the optical axis, that is, in the direction of the optical axis. In other words, the optical path adjusting device 114 has a slider portion 118 on which the two mirrors ip and 117 are mounted, and the slider portion 118 is guided to be movable in the optical axis direction (γ-axis direction). The above-described slider portion 118 moves along the rail portion 119 in the drawing of the driving source. Further, the drive source may be a rotary motor or a linear motor having a drive mechanism that converts a rotary motion of a belt, a metal wire, or a ball screw into a linear motion, and the sliding portion (10) may be moved in a linear direction. The beam bow with this optical path adjustment device 114! The guiding system has a laser beam outputted from the light source 30 201006597 source device 112 to the x-axis direction, and a first mirror 115 and a first mirror 117 of one of the aforementioned two mirrors in, 117 of the optical path length adjusting device H4 The mirror 128 directs the laser beam output from the optical path length adjusting device 114 toward the second mirror 116 and the fourth mirror 129 of the objective optical device 113. In addition, when the laser beam incident on the optical path length adjusting device 114 and the laser beam emitted from the optical path length adjusting device 114 are along the x-axis direction, the optical path length adjusting device 114 is not required. And the third mirror 128 and the fourth mirror 129 that convert the laser beam between the γ-axis direction and the ruthenium direction. Further, the mirrors η and 117 may be replaced by retroreflection such as a corner prism or a retroreflector. Further, actually, the light reflected by the second mirror II6 is reflected by the mirror (not shown) provided in the above-mentioned object 'optical device 113 to the two-axis direction, and is incident on the objective lens of the objective optical device 113. In addition, in FIG. 6, only the optical path of one laser is displayed. Here, in the z-axis direction, a plurality of, for example, four laser beams pass through the same optical path, and are guided from the light source device 112 to the objective optical. The device 113 converts the four objective optical devices 113 φ into the X-axis direction. Further, a laser beam which is at a position lowest in the z-axis direction (twist direction) among the light reflected by the second mirror 116 is incident on the objective optical device 113 closest to the second mirror 116, in order from which the laser beam is increased It is incident on the objective optical device 113 far from the second mirror 116. Further, the head moving device 120 has a size slightly larger than that along the substrate 1〇1.

加工層102之溝加工方向的X轴方向寬度之範圍,可使頭HQ 移動之X軸移動機構123、設置於設置在X軸移動機構123之 x轴滑件122 ’使頭11〇可沿γ軸方向移動之γ軸移動機構 124 ° 31 201006597 在此例中,X軸移動機構123及Y軸移動機構124由線性 馬達構成’藉使用線性祠服馬達或線性步進馬達,可精密 地控制頭110之移動。 X轴移動構123具有具沿X軸方向延伸之線性馬達之定 子的X軸引導部125及具沿該定子移動之移動子之X軸滑件 122。 X軸引導部125將X軸滑件122於X軸方向引導,同時, 定子於X軸方向驅動移動子。 设置於X轴滑件122之Υ轴移動機構124具有具沿Υ轴方 向延伸之線性馬達之定子的引導部127、具沿該定子移動之 移動子之頭110。 根據以上結構,頭110可在包含形成於基板1〇1之被加 工層102之寬度之範圍,於X軸方向移動。又,頭11〇在γ軸 方向可移動之距離於頭110之各光束射出部之間隔與形成 於基板101之被加工層1〇2之溝間隔相等時,為於光束射出 部(對物光學裝置113)之數乘上溝間隔之程度之距離。 舉例言之,以4條光束同時形成4個溝時,基板1〇1於在 Υ轴方向對溝之間隔乘上同時照射之光束數之4的距離搬送 前,需結束沿著被加工層之X轴方向之頭11〇之移動,結束4 個溝之加工。 因而,基本上,頭110在γ轴方向之移動距離如上述不 必為於從頭110射出之光束數乘上要加工之溝之間隔的長 度以上。 此外,如後述,頭110之Υ轴方向之移動速度與基板101 32 201006597 之γ軸方向之移動速度控制為相等,相對於繼續移動 1〇1,頭110於每次形成溝之動作,返回至反方向而停止; 再於Υ軸方向(正方向)開始移動,故需要用以使頭⑽之Υ轴 方向之移動速度加速至基㈣1之移動速度之加速距離。 由於基板而從以用以製作頭110之一次溝之動作製作 之溝前進各溝間之間隔範圍時,趕不及頭11G之下個溝製 作,故頭U0在Y軸方向之移動距離最大為上述距離即足夠。 因而,γ軸移動機構U4所作之頭110之¥軸方向之移動 距離遠較基板101之尺寸短。 就伴隨具有此種X軸移動機構123及丫軸移動機構124 之頭移動裝置120的頭110之移動之光束加工方法作說明。 此外,頭之移動控制以圖中未示之移動控制裝置(移動 控制機構)進行。 移動控制裝置係控制由線性馬達構成之X軸移動機構 123及Y軸移動機構124者’基本上以眾所周知之伺服馬達控 制或步進馬達控制進行控制。 在光束加工方法中,首先,基板101係以搬送機構1〇4 以預定速度SK移動者。於基板101依對應於頭110之光束照 射數之條數之各溝設定光束照射開始位置。此外,光束照射 開始位置交互設定為被加工層102之左側緣側與右側緣側。 然後,光束照射開始位置成為頭110之光束照射部中相 對於基板101之搬送方向為最後側之光束照射部的光束照 射位置時,開始頭110之光束之照射。此外,雷射光束僅於 加工被加工層102時照射,在加工以外,頭11〇移動時,亦 33 201006597 可呈停止照射之狀態,亦可在不加工被加工層1〇2之狀態 下’直接輸出雷射光束,呈使雷射光束穩定之狀態。 此時,頭110沿著γ轴方向之移動速度與基板1〇1沿γ軸 方向之移動速度需相同,而為同步。 是故,在移動控制中,首先,頭11〇位於於搬送方向移 動之基板101之左側,且搬送基板1〇1之下個要照射光束之 光束照射開始位置位於左側。頭110位於Y軸方向之原點位 置、基本上係位於搬送方向最後側。頭11〇係位於X軸方向 之左右任一之原點位置。此外,關於χ軸方向,有頭11〇移 動時,為最左侧之原點位置及最右側之原點位置。 原點位置不需為頭110構造上可移動範圍之起點,只要 在溝加工時之移動範圍内,為起點即可。此時,頭110之構 造之可移動範圍大於溝加工時,頭110移動之移動範圍。 在基板101之前述光束照射開始位置比頭110之搬送方 向最後侧之光束射出部之光束照射位置靠近前方預定距離 之階段,開始頭110在γ軸方向之移動,使頭110之移動速度 加速至與基板101之搬送速度相等為止,當相等時,速度即 一定。 又’此速度一定時,基板101之前述光束照射開始位置 與頭110之前述光束照射位置需相等。 如第8(a)圖所示,頭11〇之光束照射位置於Y轴方向沿 箭號Y1加速移動。頭110之移動速度與基板101之搬送速度 相等,且在光束照射開始位置與光束照射位置相等之時間 點,開始光束照射’同時,使頭no沿χ軸方向移動。藉此, 34 201006597 如第8 (a)圖所示,從頭丨丨〇照射之4條光束之照射位置呈沿箭 號Υ2於右斜前方移動之狀態。由於χ軸方向移動亦需要加 速期間’故實際上,在前述光束照射開始位置與前述光束 照射位置相等前,需開始頭110在X軸方向之移動。 此時在X軸方向之移動基本上為等速移動,如上述最初 需加速’最後需減速。特別是因加速或減速造成之速度不 同,對雷射光束之加工產生影響時,χ軸移動之開始位置與 停止位置比被加工層102之左右側緣還外側,在χ軸移動之 開始位置頭110—面於χ軸方向加速,一面開始移動,在從 被加工層102側緣之外側到達側緣之階段,呈往X軸方向之 移動速度達預定速度SX之狀態,之後,在光束照射至被加 工層102上之期間,以預定速度等速移動。 此外,與X軸方向之在被加工層102外侧之加速同時 地,進行Υ軸方向之加速。 在此,頭110於Υ軸方向及X軸方向加速之階段為一側 緣側加速步驟(左側緣側加速步驟)。 如上述,頭110於Υ軸方向以基板101之搬送速度SK等 速移動,於X軸方向以預定速度SX等速移動之階段為正方 向等速加工步驟。 當雷射光束之照射位置到達被加工層102之反側之側 緣時,使頭110之X軸方向之移動之速度減速而停止即可。 在χ軸方向之等速移動結束之階段、亦即γ軸方向之等 速移動亦結束之階段,使頭110在Υ轴方向,於基板iOl之搬 送方向反向移動。此時,頭在γ軸方向之移動中減速後 35 201006597 停止,然後於反向移動。此時,x軸方向之移動亦減速而停 止。回復至此頭no之原點位置之步驟為另—側緣側原點回 復步驟。 又,此時,在基板101 ’如上述已進行雷射光束照射之 光束照射開始位置之下個光束照射開始位置以上述預定搬 送速度SK移動。 對此,使頭110沿γ軸方向於搬送方向之反向移動,返 回原點位置。在X軸方向,左右有原點位置,在為左原點位 置之相反之右原點位置呈頭110停止之狀態。 參 此時,如第8(a)圖之箭號Y3所示,沿γ軸方向使頭11() 返回至上述Y軸方向之原點位置,此時,基板1〇1之下個光 束照射開始位置需比頭110之前述光束照射位置更後方,如 上述,當頭110開始移動,達預定速度時,需呈基板1〇1之 光束照射開始位置趕上頭110之前述光束照射位置之狀態。 此外,若不考慮加速或減速,在此狀態下,使基板101 之下個光束照射開始位置對準頭11〇之光束照射位置,而實 際上,再二欠,經由沿著X轴方向及γ軸方向使頭11〇開始移 _ 動,且加速之另-側緣側加速步驟,使光束照射開始位置 對準頭110之光束照射位置。然後,合併此另一側緣側原點 回復步驟及另-側緣側加速步驟,而構成另一側緣側照射 位置對準步驟。此外,在另—側緣側加速步驟中,基本上 除了左右位置相反外,進行與上述一側緣側力〇速步驟相同 之處理。 即’如第8(b)圖之箭號所示於γ轴方向加速。 36 201006597 又,在χ軸方向中,相對於上述χ軸方向之移動開始之 左側原點位置’除了從右側原點位置與上述相反地從右移 動至左外,皆同樣地加速。 然後,在另一侧緣側加速步驟,γ軸方向之移動速度為 前述基板101之搬送速度SK,X軸方向之移動速度亦為預定 速度,且基板101之光束照射開始位置成為頭11〇之照射開 始位置時,反方向等速加工步驟係於使又軸方向為於與正方 向等速加工步驟時相反之方向等速移動,且於γ軸方向等速 移動’進行雷射光束之加工。即’於第8(b)圖之箭號γ〗方 向移動。 然後,與上述同樣地,進行一側緣側原點回復步驟, 其係在X軸方向及Υ軸方向之等速移動結束,在χ軸方向減 速停止,在Υ軸方向減速停止,使頭11〇沿γ軸方向如箭號 Υ6所示,返回原點位置。 然後,使頭110返回Υ軸方向之搬送方向之反向,而在 原點位置後,返回最初之步驟。 然後,一側緣側原點回復步驟與最初之一側緣側加速 步驟作為使頭110之光束照射位置對準基板101之光束照射 開始位置之一側緣照射位置對準步驟。 在以上之光束加工方法中,頭110之移動大致如第8(c) 圖所示’开> 成蝴蝶領結形移動。即,從左側斜向移動至右 側後,筆直返回後側,再從右側斜向移動至左前侧後,筆 直返回後側,藉此,移動形狀呈蝴蝶領結狀。 又,在此種移動中,從左側至右前側之移動之前側、 37 201006597 亦即γ軸方向之移動之速度與基板1〇1之搬送速度一致從 右側至左前側之移動之前側、亦即Υ軸方向之移動之速度與 基板101之搬送速度—致,故基板101之被加工層102之加工 形狀為溝等間隔排列成條紋狀。 此外,在第8(a)圖〜第8(d)圖中,實線表示正方向(在此 為從左往右)之加工,虛線表示反方向(在此為從右往左)之 加工。 用以進行此種光束加工方法之頭11〇之移動控制藉前 述移動控制裝置,同時進行γ軸方向與Χ轴方向之處理,在 參 以下所示之大致步驟進行控制。 令頭110之位置為γ軸原點位置及X軸左側原點位置(亦 可為右側原點位置)。此外,在伺服控制中,在χ軸移動機 構123及Y軸移動機構124,於定子側設置用以測量移動子之 - 位置之感測器,以該感測器在γ轴移動機構124及χ軸移動 機構123測量各移動子之位置,而可測量頭之位置。 當不在預定頭位置時,在頭11〇移動。又,在頭11〇動 作中,以藉前述感測器求出之位置進行反饋控制。 參 搬送機構104連動,進行基板101之搬送,基板1〇1加速 至預定速度SK,以預定速度SK搬送。 基板之被加工層之上述光束照射開始位置到達預定位 置時、亦即位於從光束照射開始位置相對於位於原點位置 之頭110之光束開始位置往前預定距離L1之位置時,進行以 下之處理。 即’在Υ軸移動機構124使移動子從速度〇加速至預定速 38 201006597 度sk ’同時’此時之加速度在移動子移動預定距離之預定 期間’設定成到達預定速度SK之加速度。 在此’預定速度SK為與搬送機構104之搬送速度SK相 同之速度。又,此時,基板101除了前述預定距離,在前述 預定期間中’以預定速度SK移動搬送基板101之距離量,此 時’前述光束開始位置設定成頭之光束照射位置。 又’在X轴移動機構123,使移動子從速度〇加速至預定 速度SX°此時’頭110之光束照射位置從被加工層102之外 侧到達被加工層102側緣之上述光束照射開始位置。 在此狀態下’ γ軸移動機構丨24之移動子速度為預定速 度SK ’ X軸移動機構123之移動子速度為預定速度SX,同 時,頭110之位置之光束照射位置為基板1〇1之光束照射開 始位置。此控制步驟為一側緣側加速控制步驟。 保持上述狀態下,X軸移動機構123之移動子與Y軸移 動機構124之移動子繼續移動至在此狀態下,到達被加工層 102之另一側緣之加工結束位置為止。此為正向等速加工控 制步驟。 當到達加工結束位置時’ Y軸移動機構124之移動子急 減速,且在停止後,於反方向急加速移動,返回Y轴原點位 置,同時,在Y軸原點位置附近再急減速,在Y轴原點位置 停止。 同樣地,在X轴移動機構123,移動子亦急減速,停止 而在X轴右側原點位置停止。此為另一側緣側原點回復控制 步驟。 39 201006597 接著,再進行上述γ軸移動機構124之移動子之加速步 驟與X軸移動機構123之移動子之加速步驟。即,進行另一 側緣侧加速控.驟。此外,合併上述另—側緣側原點回 復控制步驟與另—侧緣側加速控制步驟之步驟為另一側緣 照射位置對準控制㈣,該侧緣側照射位置對準控制 步驟係在基板HU之被加玉層1()2之另—側緣側,控制成使 頭110於與基板1()1之搬送方向相反之方向移動,在搬送中 之基板1G1之正向等速加卫控制步驟,使從作為頭11〇之搬 送方向最前側之光束射出部照射之光束可照射地移動至距 離在頭110之搬送方向最後側之光束射出部(對物光學裝置 113)加工之部份預定間隔之位置。 此外’ X轴移動機構123之行進方向為與上述加速步驟 相反之方向。 γ轴移動機構124之移動子之移動速度為預定速度 SK,X軸移動機構123之移動之移動速度為預定速度8又。以 頭移動裴置120移動之頭110之光束照射位置為基板101之 下個光束照射開始位置。 在此階段’與上述正向等速加工控制步驟同樣地進行 與X軸方向之行進方向相反之反向等速加工控制步驟之處 理。即,頭110—面照射雷射光束,一面於γ軸方向以預定 速度SK移動,於X軸方向以預定速度SX移動。 然後,頭110之光束照射位置到達基板101之被加工層 102之一側緣之光束照射結束位置時,進行與上述另一側緣 側原點回復控制步驟相同之一側緣側原點回復控制步驟。此 40 201006597 外’㈣移動機構123中, 之另-侧緣侧原右略與之前 在此 驟相反之左右位置之原點。 返回至最初之x轴移動機構123之左原點位置。 可繼續溝加二= 并同時,反覆進行上述步驟,而 盥最 口併此一側緣側原點回復控制步驟The X-axis direction width of the groove processing direction of the processing layer 102 is such that the X-axis moving mechanism 123 for moving the head HQ and the x-axis slider 122' provided for the X-axis moving mechanism 123 can make the head 11 沿 along the γ The γ-axis moving mechanism that moves in the axial direction 124 ° 31 201006597 In this example, the X-axis moving mechanism 123 and the Y-axis moving mechanism 124 are constituted by a linear motor 'by using a linear servo motor or a linear stepping motor, the head can be precisely controlled 110 moves. The X-axis moving mechanism 123 has an X-axis guide 125 having a stator of a linear motor extending in the X-axis direction and an X-axis slider 122 having a mover moving along the stator. The X-axis guide portion 125 guides the X-axis slider 122 in the X-axis direction, and the stator drives the mover in the X-axis direction. The x-axis moving mechanism 124 provided to the X-axis slide 122 has a guide portion 127 having a stator of a linear motor extending in the direction of the y-axis, and a head 110 having a mover moving along the stator. According to the above configuration, the head 110 can be moved in the X-axis direction within a range including the width of the processed layer 102 formed on the substrate 1?. Further, when the distance between the head 11 可 in the γ-axis direction and the distance between the respective beam emitting portions of the head 110 is equal to the interval between the grooves formed on the substrate 101 of the substrate 101, the beam is emitted to the object. The number of devices 113) is multiplied by the distance of the groove spacing. For example, when four grooves are simultaneously formed by four light beams, the substrate 1〇1 is required to end the distance along the processed layer before the distance between the grooves in the z-axis direction multiplied by the distance of the number of beams irradiated at the same time. The movement of the head 11 degrees in the X-axis direction ends the processing of the four grooves. Therefore, basically, the moving distance of the head 110 in the γ-axis direction is not necessarily the length of the interval between the number of beams emitted from the head 110 multiplied by the groove to be processed. Further, as will be described later, the moving speed of the head 110 in the x-axis direction is controlled to be equal to the moving speed of the substrate 101 32 201006597 in the γ-axis direction, and the head 110 is moved to each other to form a groove with respect to the continuous movement of 1〇1. Stopping in the opposite direction; and starting to move in the x-axis direction (positive direction), it is necessary to accelerate the moving speed of the head (10) in the x-axis direction to the acceleration speed of the moving speed of the base (four) 1. When the groove formed by the operation for making the primary groove of the head 110 advances the interval between the grooves by the substrate, it is not possible to make the groove below the head 11G, so the moving distance of the head U0 in the Y-axis direction is at most the above distance. That is enough. Therefore, the movement distance of the head 110 of the y-axis moving mechanism U4 in the direction of the ¥ axis is much shorter than the size of the substrate 101. A beam processing method accompanying the movement of the head 110 of the head moving device 120 having such an X-axis moving mechanism 123 and a spindle moving mechanism 124 will be described. Further, the head movement control is performed by a movement control device (movement control mechanism) not shown. The movement control device controls the X-axis moving mechanism 123 and the Y-axis moving mechanism 124 constituted by the linear motor to be basically controlled by well-known servo motor control or stepping motor control. In the beam processing method, first, the substrate 101 is moved by the transport mechanism 1〇4 at a predetermined speed SK. The light beam irradiation start position is set on the substrate 101 in accordance with each of the grooves corresponding to the number of beam irradiations of the head 110. Further, the beam irradiation start position is interactively set to the left side edge side and the right side edge side of the processed layer 102. Then, when the beam irradiation start position is the beam irradiation position of the light beam irradiation portion of the light beam irradiation portion of the head 110 which is the last side of the substrate 101, the irradiation of the light beam of the head 110 is started. In addition, the laser beam is irradiated only when the processed layer 102 is processed. When the head 11 is moved, the lens may be in a state of stopping the irradiation, or may be in a state where the processed layer 1〇2 is not processed. The laser beam is directly outputted to stabilize the laser beam. At this time, the moving speed of the head 110 in the γ-axis direction and the moving speed of the substrate 1〇1 in the γ-axis direction are the same, and are synchronized. Therefore, in the movement control, first, the head 11 is located on the left side of the substrate 101 which is moved in the transport direction, and the beam irradiation start position of the lower substrate to be irradiated with the light beam 1 〇1 is located on the left side. The head 110 is located at the origin of the Y-axis direction and is basically located on the last side of the transport direction. The head 11 is located at the origin position of either of the left and right in the X-axis direction. In addition, regarding the direction of the x-axis, when the head 11 is moved, it is the leftmost origin position and the rightmost origin position. The origin position does not need to be the starting point of the movable range of the head 110, and it is only necessary to start in the range of movement during the groove processing. At this time, the movable range of the configuration of the head 110 is larger than the range of movement of the head 110 when the groove is processed. At the stage where the beam irradiation start position of the substrate 101 is closer to the front predetermined distance than the beam irradiation position of the beam emitting portion on the last side of the transport direction of the head 110, the movement of the head 110 in the γ-axis direction is started, and the moving speed of the head 110 is accelerated to When the transfer speed is equal to the substrate 101, the speed is constant when they are equal. Further, when the speed is constant, the beam irradiation start position of the substrate 101 and the beam irradiation position of the head 110 are required to be equal. As shown in Fig. 8(a), the beam irradiation position of the head 11〇 is accelerated along the Y-axis direction along the arrow Y1. The moving speed of the head 110 is equal to the transport speed of the substrate 101, and at the time point when the beam irradiation start position is equal to the beam irradiation position, the beam irradiation is started, and the head no is moved in the z-axis direction. Thereby, 34 201006597 As shown in Fig. 8(a), the irradiation position of the four beams irradiated from the head cymbal is in a state of being moved obliquely forward in the right direction along the arrow Υ2. Since the acceleration period is required to move in the x-axis direction, the movement of the head 110 in the X-axis direction is actually started before the beam irradiation start position is equal to the beam irradiation position. At this time, the movement in the X-axis direction is basically a constant-speed movement, as the above-mentioned initial acceleration is required, and finally the deceleration is required. In particular, when the speed caused by the acceleration or deceleration is different, when the processing of the laser beam is affected, the start position and the stop position of the x-axis movement are outside the left and right side edges of the processed layer 102, and the head is moved at the start position of the x-axis. The plane 110 is accelerated in the direction of the x-axis, and the surface starts to move. At the stage from the outer side of the side edge of the processed layer 102 to the side edge, the moving speed in the X-axis direction reaches a predetermined speed SX, and then the beam is irradiated to While being processed on the layer 102, it moves at a constant speed at a predetermined speed. Further, acceleration in the x-axis direction is performed simultaneously with acceleration in the X-axis direction outside the processed layer 102. Here, the stage in which the head 110 is accelerated in the x-axis direction and the X-axis direction is a side edge side acceleration step (left side edge side acceleration step). As described above, the head 110 moves at a constant speed in the z-axis direction at the transport speed SK of the substrate 101, and moves at a constant speed SX at the predetermined speed in the X-axis direction as a forward direction constant velocity machining step. When the irradiation position of the laser beam reaches the side edge of the opposite side of the processed layer 102, the speed of the movement of the head 110 in the X-axis direction is decelerated and stopped. At the stage where the constant velocity movement in the x-axis direction is completed, that is, the constant velocity movement in the γ-axis direction is also completed, the head 110 is moved in the direction of the x-axis in the direction of the x-axis in the opposite direction. At this time, the head is decelerated in the movement in the γ-axis direction. 35 201006597 Stops and then moves in the reverse direction. At this time, the movement in the x-axis direction also slows down and stops. The step of returning to the origin position of this head no is the other-side edge side origin reply step. Further, at this time, the substrate 101' is moved at the predetermined transport speed SK by the lower beam irradiation start position as the above-described beam irradiation start position at which the laser beam is irradiated. On the other hand, the head 110 is moved in the reverse direction of the conveyance direction in the γ-axis direction, and is returned to the original position. In the X-axis direction, there is an origin position on the left and right, and the head 110 is stopped at the right origin position opposite to the left origin position. At this time, as indicated by the arrow Y3 of Fig. 8(a), the head 11 () is returned to the origin position of the Y-axis direction along the γ-axis direction, and at this time, the light beam of the substrate 1〇1 is irradiated. The starting position needs to be rearward than the aforementioned beam irradiation position of the head 110. As described above, when the head 110 starts moving to a predetermined speed, the beam irradiation start position of the substrate 1〇1 is caught in the state of the beam irradiation position of the head 110. Further, if acceleration or deceleration is not considered, in this state, the lower beam irradiation start position of the substrate 101 is aligned with the beam irradiation position of the head 11 ,, and actually, the second owing is passed along the X-axis direction and the γ-axis. The direction causes the head 11 〇 to start moving, and the accelerated other side edge side acceleration step causes the beam irradiation start position to align with the beam irradiation position of the head 110. Then, the other side edge side origin returning step and the other side edge side accelerating step are combined to constitute the other side edge side irradiation position alignment step. Further, in the other side edge side acceleration step, basically the same processing as the above-described side edge side force idling step is performed except that the left and right positions are reversed. That is, it is accelerated in the γ-axis direction as indicated by the arrow of Fig. 8(b). 36 201006597 Further, in the x-axis direction, the left origin position 'starting with respect to the movement in the x-axis direction is accelerated in the same manner except that the right original position is moved from the right to the left opposite to the above. Then, in the other side edge side acceleration step, the moving speed in the γ-axis direction is the transport speed SK of the substrate 101, and the moving speed in the X-axis direction is also a predetermined speed, and the beam irradiation start position of the substrate 101 becomes the head 11 At the irradiation start position, the reverse-direction constant-speed machining step is performed by moving the laser beam at a constant speed in the direction opposite to the forward direction constant-speed machining step and moving at the same speed in the γ-axis direction. That is, it moves in the direction of the arrow γ in the figure 8(b). Then, in the same manner as described above, the one-edge-side origin returning step is performed, and the constant-speed movement in the X-axis direction and the Υ-axis direction is completed, the vehicle is decelerated and stopped in the χ-axis direction, and is decelerated and stopped in the Υ-axis direction to cause the head 11 〇 Return to the origin position as indicated by arrow Υ6 along the γ axis. Then, the head 110 is returned to the reverse direction of the transport direction in the x-axis direction, and after the origin position, the first step is returned. Then, the one side edge origin returning step and the first one side edge side accelerating step are a side edge irradiation position alignment step of aligning the beam irradiation position of the head 110 with the beam irradiation start position of the substrate 101. In the above beam processing method, the movement of the head 110 is substantially in the form of a bow tie as shown in Fig. 8(c). That is, after moving obliquely from the left side to the right side, the pen returns straight to the rear side, and then moves obliquely from the right side to the left front side, and the pen returns straight to the rear side, whereby the moving shape is a bow tie shape. Further, in such a movement, the movement speed from the left side to the front side of the front side, 37 201006597, that is, the movement speed in the γ-axis direction coincides with the conveyance speed of the substrate 1〇1 from the right side to the front side of the left front side, that is, Since the moving speed in the z-axis direction is the same as the transport speed of the substrate 101, the processed shape of the processed layer 102 of the substrate 101 is arranged in a stripe shape at equal intervals. Further, in the eighth (a)th to eighth (d)th drawings, the solid line indicates the processing in the positive direction (here, from left to right), and the broken line indicates the processing in the reverse direction (here, from right to left). . The movement control of the head 11 for performing such a beam processing method is performed by the above-described movement control device while performing the processing in the γ-axis direction and the Χ-axis direction, and is controlled in the approximate steps shown below. The position of the head 110 is the γ-axis origin position and the X-axis left origin position (may also be the right origin position). Further, in the servo control, the x-axis moving mechanism 123 and the Y-axis moving mechanism 124 are provided on the stator side to measure the position of the moving sub-position, and the sensor moves the mechanism 124 and the γ in the γ-axis. The axis moving mechanism 123 measures the position of each mover, and the position of the head can be measured. When not in the predetermined head position, it moves in the head 11〇. Further, during the first 11 〇 operation, feedback control is performed by the position obtained by the above-described sensor. The transfer mechanism 104 is interlocked to carry the substrate 101, and the substrate 1〇1 is accelerated to a predetermined speed SK and transported at a predetermined speed SK. When the beam irradiation start position of the processed layer of the substrate reaches a predetermined position, that is, when the beam irradiation start position is at a predetermined distance L1 from the beam start position of the head 110 located at the origin position, the following processing is performed. . That is, the acceleration of the predetermined speed SK is set by the Υ-axis moving mechanism 124 accelerating the moving member from the speed 〇 to the predetermined speed 38 201006597 degrees sk ' while the acceleration at this time is predetermined during the predetermined period in which the moving sub-movement moves. Here, the predetermined speed SK is the same speed as the transport speed SK of the transport mechanism 104. Further, at this time, in addition to the predetermined distance, the substrate 101 moves the distance of the substrate 101 at a predetermined speed SK in the predetermined period. At this time, the beam start position is set to the head beam irradiation position. Further, in the X-axis moving mechanism 123, the moving member is accelerated from the speed 〇 to the predetermined speed SX°. At this time, the beam irradiation position of the head 110 reaches the beam irradiation start position from the outer side of the processed layer 102 to the side edge of the processed layer 102. . In this state, the moving sub-speed of the γ-axis moving mechanism 丨24 is the predetermined speed SK'. The moving sub-speed of the X-axis moving mechanism 123 is the predetermined speed SX, and the beam irradiation position at the position of the head 110 is the substrate 1〇1. The beam is illuminated at the start position. This control step is a side edge side acceleration control step. While maintaining the above state, the moving member of the X-axis moving mechanism 123 and the moving member of the Y-axis moving mechanism 124 continue to move to the processing end position of the other side edge of the processed layer 102 in this state. This is the forward constant speed machining control step. When the machining end position is reached, the movement of the Y-axis moving mechanism 124 is rapidly decelerated, and after stopping, it is rapidly accelerated in the opposite direction, and returns to the Y-axis origin position, and then rapidly decelerates near the Y-axis origin position. Stop at the Y-axis origin position. Similarly, in the X-axis moving mechanism 123, the mover is also decelerated rapidly, and stops at the origin position on the right side of the X-axis. This is the other side edge origin return control step. 39 201006597 Next, the acceleration step of the mover of the γ-axis moving mechanism 124 and the step of accelerating the mover of the X-axis moving mechanism 123 are performed. That is, another side edge side acceleration control is performed. In addition, the step of combining the above-mentioned other side edge origin return control step and the other side edge side acceleration control step is another side edge illumination position alignment control (4), and the side edge side illumination position alignment control step is on the substrate The other side edge side of the added jade layer 1 () 2 of the HU is controlled so that the head 110 moves in the opposite direction to the transport direction of the substrate 1 () 1, and the forward direction of the substrate 1G1 in the transport is equally fastened. In the control step, the light beam emitted from the light beam emitting portion on the foremost side in the transport direction of the head 11 is illuminably moved to a portion processed by the light beam emitting portion (the object optical device 113) on the rear side in the transport direction of the head 110. The location of the scheduled interval. Further, the traveling direction of the 'X-axis moving mechanism 123' is the opposite direction to the above-described acceleration step. The moving speed of the moving object of the γ-axis moving mechanism 124 is the predetermined speed SK, and the moving speed of the movement of the X-axis moving mechanism 123 is the predetermined speed 8 again. The beam irradiation position of the head 110 moving by the head moving device 120 is the next beam irradiation start position of the substrate 101. At this stage, the reverse isotropic machining control step opposite to the traveling direction in the X-axis direction is performed in the same manner as the above-described forward constant-speed machining control step. That is, the head 110-surface irradiates the laser beam while moving at a predetermined speed SK in the γ-axis direction and at a predetermined speed SX in the X-axis direction. Then, when the beam irradiation position of the head 110 reaches the beam irradiation end position of one side edge of the processed layer 102 of the substrate 101, one side edge side origin return control is performed in the same manner as the other side edge side origin return control step. step. This 40 201006597 outer (fourth) moving mechanism 123, the other side edge side is just right and the origin of the left and right positions opposite to the previous one. Return to the left origin position of the original x-axis moving mechanism 123. You can continue to add 2 = and at the same time, repeat the above steps, and 盥 the most mouth and the origin side return control step

側照射位置對準㈣步驟相n刚m射位置對準= 制步驟。此外,在另_側緣側照射位置對準控制步驟盘一 側緣側照射位置對準控制步驟,χ轴方向之左右位置相反。 ^據乂上之光束加工裝置之光束加工方法,由於使頭 110如上述移動’在不停止基板1G1之搬送下可於被加工 層102將溝形成條紋狀,故在前述發電系統等製造,可進行 作業期間之大幅縮短。 又,在基板101之搬送機構104中,不致頻繁地進行加 速、減速、停止,故即使搬送之基板101為大型且重量大者, 亦不致對搬送機構104要求大強度,而可謀求搬送機構1〇4 之成本減低。 又,亦可防止對搬送之基板101施加大負載。 又,由於可使頭110—面沿蝴蝶領結外周所示之形狀移 動,一面對基板101垂直地照射雷射光束,故從基板1〇1之 另一面侧對一面側之被加工層照射雷射光束而加工時,使 用電流鏡,斜向照射,且相較與照射角度變化之情形,基 板101與周圍之環境氣體之空氣或其他氣體之界面之折射 率的反射率或照射角度無變化,可進行精密且大致—定之 201006597 加工,藉此,在前述發電系統之製造,可期望發電效率之 提焉。 由於使用軸狀集光用光學元件52,故為同時照射複數 光束之結構時,不論各光束之對物光學裝置113之焦點之偏 離或因光束照射位置之不同引起之被加工層側之Z轴方向 之偏離等’可使複數光束之被加工層上之各照射位置在焦 點深度内,即使為同時照射複數光束之結構,亦可防止加 工精確度降低,並且可在保持加工品質之狀態下,增加可 同時照射之雷射光束數。 參 又,藉此,可謀求加工時間之進一步縮短。 又,當為以狹窄間隔反覆進行許多直線狀加工而形成 成條紋狀之結構時,頭110在X軸方向之移動速度、γ軸方 , 向之上述減速、原點回復步驟時,移動速度相對於基板 之搬送速度需相當快,一次使用複數雷射光束,將複數溝 加工,而使基板101之搬送速度一定時,可謀求頭11〇之χ 軸方向之移動速度之減低、γ軸方向之減速、停止、加速所 需之期間之長期化’藉此’可謀求頭移動裝置12〇之成本之 ® 減低。 又,反之,亦可使基板101之搬送速度加快,謀求加工 時間之進一步縮短。 又,在以此種光束加工裝置之光束加工方法製造之光 束加工基板’可謀求上述光束加卫裝置之成本減低之製造 設備之成本減低及製造時間之驗之成本減低。如此,即 使謀求成本之減低,亦可以精密且穩定之光束加工,形成 42 201006597 具有高品質之光束加工基板,可作為應用於利用光電致果 之發電系統之面板時,發電效率高者。 此外,由於光束照射位置以蝴蝶領結狀移動,故μ 於台141而配置吸引機構之縫隙部為對應於蝴蝶領、社狀“ 束照射位置全體者。 ° “ 第9(a)圖、第9(b)圖及第10圖係說明本發明第4實施邢 態光束加工裝置概略者。 在第1〜第3實施形態,以基板2(1〇1)之被加工層(1〇2) 側為下,從基板2(101)上側照射雷射,相對於此,在第々實 施形態中,以基板1〇丨之被加工層1〇2(顯示於第7圖)側為 上,從基板101之下侧照射雷射。 在第4實施形態中,搬送機構2〇4之構造與第i〜第3實 施形態不同,與第1〜第3實施形態不同之點係光束照射機 構之頭210配置於搬送機構204上之基板1〇1下側,頭21〇之 移動機構或將雷射光束引導至頭21 〇之光束引導系統相對 於搬送機構204上之基板ι〇1而配置於下側,除了對此基板 101之位置關係之外’可使用與第丨〜第3實施形態相同之光 束照射機構(光束照射裝置211)。 第4實施形態之光束加工裝置可在與第丨〜第3實施形態 相同之用途使用’且可進行同樣之加工,可製造與第1實施 形態同樣地利用光電效果之發電系統。 第4實施形態之搬送機構2〇4不具有氣體飄浮機構10, 而具有作為支撐機構之輥2〇3。輥203以輥支撐機構205旋轉 自如地支撐。又,輥2〇3之旋轉中心配置於與搬送機構204 43 201006597 之基板101之搬送方向垂直相交之方向,將基板101支撐成 沿搬送方向移動自如。 又,輥203沿搬送方向配置成複數列,同時,沿與搬送 方向垂直相交之寬度方向配置成複數列,將基板1〇1從下側 支撐成基板101不致撓曲。 即,搬送機構204將基板1〇1支撐成平坦之狀態。此外, 亦可不將輥203相對於基板1〇1之寬度方向(與該基板1〇1之搬 送方向垂直相交之方向)排列複數個而配置,而使輥2〇3為以 與基板101相同之程度之長度防止基板1〇1之撓曲的構造。 輥203接觸基板1〇1之下面,由於基板1〇1使被加工層 102朝向上側,配置於搬送機構2〇4,故被加工層1〇2不致接 觸輥203,被加工層1〇2不致因與輥203之接觸而損傷。此 外,該等輥203之所有上端部配置於幾乎平坦之丨個平面 内,而可呈在使基板101幾乎不撓曲下,支撐成平坦之狀態。 又,輥203基本上與氣體飄浮機構1〇同樣地僅將基板 101支撐成可於搬送方向移動,基板101之移動與第丨及第2 實施形態同樣地,以圖中未示之移動機構進行。移動機構 係與第1實施形態之移動機構14相同者。 又,搬送機構204與氣體飄浮機構1 〇同樣地具有縫隙部 2(Π。縫隙部201與搬送方向垂直相交,具有與基板1〇1之寬 度相同之程度或其以上之長度。 在縫隙部201之下側,如後述,頭21〇於基板1〇1之搬送 方向之Υ軸方向及與搬送方向垂直相交之χ軸方向移動自如。 於縫隙部201之上側設置具有與第2實施形態大致相同 44 201006597 之結構之吸弓丨機構207 。此吸引機構207係作為第4實施形態 之粉體去除機構。Side Irradiation Position Alignment (4) Step Phase n just m position alignment = step. Further, on the other side edge side irradiation position alignment control step, the side edge side irradiation position alignment control step is performed, and the left and right positions of the x-axis direction are opposite. According to the beam processing method of the beam processing device, the head 110 is moved as described above, and the groove can be formed in the processed layer 102 without being stopped by the substrate 1G1. Therefore, the power generation system can be manufactured. Significantly shortened during the work period. Further, in the transport mechanism 104 of the substrate 101, acceleration, deceleration, and stop are not frequently performed. Therefore, even if the substrate 101 to be transported is large and heavy, the transport mechanism 104 is not required to have a large strength, and the transport mechanism 1 can be realized. The cost of 〇4 is reduced. Further, it is possible to prevent a large load from being applied to the substrate 101 to be transported. Further, since the head 110-plane can be moved along the shape shown by the outer circumference of the bow tie, and the laser beam is irradiated perpendicularly to the substrate 101, the layer to be processed is irradiated to the processed layer from the other side of the substrate 1〇1. When the beam is processed, a current mirror is used, obliquely irradiated, and the reflectance or the irradiation angle of the refractive index at the interface between the substrate 101 and the surrounding ambient air or other gas does not change as compared with the case where the irradiation angle is changed. It is possible to carry out the processing of the precision and roughly the 201006597, whereby the power generation efficiency can be expected in the manufacture of the aforementioned power generation system. Since the axial light collecting optical element 52 is used, when the structure of the plurality of light beams is simultaneously irradiated, the Z-axis of the processed layer side due to the difference in the focus of the objective optical device 113 of each light beam or the difference in the irradiation position of the light beam is used. The deviation of the direction or the like can make the respective irradiation positions on the processed layer of the complex beam within the depth of focus, and even if the structure of the plurality of beams is simultaneously irradiated, the processing accuracy can be prevented from being lowered, and the processing quality can be maintained while being maintained. Increase the number of laser beams that can be illuminated simultaneously. With this, it is possible to further shorten the processing time. In addition, when a plurality of linear processes are repeatedly performed at a narrow interval to form a stripe structure, the moving speed of the head 110 in the X-axis direction and the γ-axis direction, and the above-described deceleration and origin return steps, the moving speed is relatively The transport speed of the substrate is required to be relatively fast, and the plurality of laser beams are used at a time to process the plurality of grooves, and when the transport speed of the substrate 101 is constant, the moving speed of the head 11 χ in the axial direction can be reduced, and the γ-axis direction can be reduced. The long-term period of the period required for deceleration, stop, and acceleration can be reduced by the cost of the head mobile device 12 . On the contrary, the transport speed of the substrate 101 can be increased, and the processing time can be further shortened. Further, in the beam processing substrate manufactured by the beam processing method of the beam processing apparatus, the cost reduction of the manufacturing equipment of the above-mentioned beam-shaping device and the cost reduction of the manufacturing time can be reduced. In this way, even if the cost is reduced, a precise and stable beam processing can be performed to form a high-quality beam processing substrate, which can be used as a panel for a power generation system using photovoltaics, and has high power generation efficiency. In addition, since the beam irradiation position moves in a bow-tie shape, the gap portion where the suction mechanism is disposed on the stage 141 corresponds to the butterfly collar and the social "beam irradiation position. °" Fig. 9(a), ninth (b) and Fig. 10 are views showing the outline of a beam processing apparatus according to a fourth embodiment of the present invention. In the first to third embodiments, the laser beam is irradiated from the upper side of the substrate 2 (101) with the substrate (1〇2) side of the substrate 2 (1〇1) as the lower side, and the second embodiment is used. In the middle, the laser beam is irradiated from the lower side of the substrate 101 with the substrate 1〇2 (shown on the seventh drawing) side of the substrate 1 as the upper side. In the fourth embodiment, the structure of the transport mechanism 2〇4 is different from the first to third embodiments, and the head 210 of the light beam irradiation mechanism that is different from the first to third embodiments is disposed on the substrate on the transport mechanism 204. The lower side of the 1〇1, the moving mechanism of the head 21〇 or the beam guiding system for guiding the laser beam to the head 21 is disposed on the lower side with respect to the substrate ι1 on the transport mechanism 204, except for the position of the substrate 101 A beam irradiation mechanism (beam irradiation device 211) similar to that of the third to third embodiments can be used. The beam processing apparatus according to the fourth embodiment can be used in the same manner as in the third to third embodiments, and the same processing can be performed, and a photovoltaic power generation system similar to that of the first embodiment can be manufactured. The conveying mechanism 2〇4 of the fourth embodiment does not have the gas floating mechanism 10, but has a roller 2〇3 as a supporting mechanism. The roller 203 is rotatably supported by the roller support mechanism 205. Further, the rotation center of the roller 2〇3 is disposed in a direction perpendicular to the conveyance direction of the substrate 101 of the conveyance mechanism 204 43 201006597, and the substrate 101 is supported to be movable in the conveyance direction. Further, the rollers 203 are arranged in a plurality of rows in the transport direction, and are arranged in a plurality of rows in the width direction perpendicular to the transport direction, and the substrate 1〇1 is supported from the lower side so that the substrate 101 is not bent. That is, the transport mechanism 204 supports the substrate 1〇1 in a flat state. Further, the roller 203 may be arranged in a plurality of rows in the width direction of the substrate 1 (1 in a direction perpendicular to the direction in which the substrate 1 1 is conveyed), and the roller 2 〇 3 may be the same as the substrate 101. The length of the degree prevents the deflection of the substrate 1〇1. The roller 203 is in contact with the lower surface of the substrate 1〇1, and since the substrate 1〇1 faces the processed layer 102 toward the upper side and is disposed on the transport mechanism 2〇4, the processed layer 1〇2 does not contact the roller 203, and the processed layer 1〇2 does not cause Damaged by contact with the roller 203. Further, all of the upper end portions of the rollers 203 are disposed in almost flat planes, and can be supported in a state in which the substrate 101 is hardly deflected. Further, the roller 203 basically supports the substrate 101 so as to be movable in the transport direction similarly to the gas floating mechanism 1A, and the movement of the substrate 101 is performed by a moving mechanism not shown in the figure, similarly to the second embodiment and the second embodiment. . The moving mechanism is the same as that of the moving mechanism 14 of the first embodiment. Further, the conveying mechanism 204 has the slit portion 2 similarly to the gas floating mechanism 1 (Π. The slit portion 201 intersects the conveying direction perpendicularly and has a length equal to or greater than the width of the substrate 1〇1. In the slit portion 201 On the lower side, as will be described later, the head 21 is movable in the x-axis direction of the transport direction of the substrate 1〇1 and the x-axis direction perpendicularly intersecting the transport direction. The upper side of the slit portion 201 is provided substantially the same as the second embodiment. 44. The suction mechanism 207 of the structure of 201006597. The suction mechanism 207 is a powder removing mechanism of the fourth embodiment.

°丨機構207係與第2實施形態相同者,不是從基板101 1而是從基板101之上側接近基板101之被加工層 、行及弓丨者。吸引機構207配置於前述縫隙部201之上 配置成在縫隙部201 ’以來自下側之雷射光束之照 、覆蓋被力°工層102之以光束加工之部份全體。藉此,由 ; 雷射光束照射,吸引去除如上述產生之粉體(粉塵), β方止私塵再附著於基板1〇1之被加工層102或呈被加工 曰 之狀態。此外,將吸引機構207固定設置,以可 在頭210之移動範圍(在搬送機構204基板1〇1受到雷射照射 之範圍)全體吸引粉體,吸引機構207亦可為對應於雷射之 照射位置之移動者。 第4實施形態之光束照射裝置211基本上係與第3實施 形態之光束照射裝置111相同者,具有生成雷射光束之光源 裝置212、從該光源裝置212將雷射光束引導至頭210之光束 引導系統。 此外’依第9圖及第1〇圖所示之概略圖,說明光束引導 系統,從光源裝置212沿X軸方向照射之雷射光束以鏡215 朝向Υ軸方向’呈引導至與第3實施形態之光程長度調整裝 置114相同之光程長度調整裝置214之狀態。導入至光程長 度調整裝置214之雷射光束以鏡216從Υ軸方向改變方向為 X軸方向。光程長度調整裝置214之逆向反射鏡217於X轴方 向移動自如地配置於鏡216之X軸方向前側。逆向反射鏡217 45 201006597 在光程長度調整台213上支撐成於X軸方向移動自如。 逆向反射鏡217係設置為取代第1實施形態之光程長度 調整裝置114之2片鏡117、117者,當光從預定方向入射時, 以與入射之光平行之狀態使光反射射出。逆向反射鏡217配 合頭210之移動’於入射至逆向反射鏡217之光(射出之光) 之方向移動’而將雷射光束之光程長度保持約略一定。 從逆向反射鏡217射出之光藉由鏡218照射至鏡219,鏡 219沿X軸方向將光照射至頭210。 頭210在設置於搬送機構204之縫隙部2〇1下側之χ軸台 參 209上’支撐成沿X軸方向移動自如。頭21〇沿又軸方向在搬 送機構204之縫隙部201之下側移動,保持雷射光束從鏡219 照射至此頭210之狀態。 r 又,由該等構成要件構成之光束照射裝置211呈在配置 於基座220上之狀態,收納於搬送機構2〇4内部之狀態如 上述,使頭210於X軸方向移動之χ軸台2〇9配置於搬送機構 204之縫隙部201之正下方。 此外,頭210與上述第3實施形態同樣地,亦於γ軸方向 魯 移動些微距離,在第9圖及第關中,省略在γ軸方向之移 動之結構。又’頭21G亦可同時照射複數個雷射光束。此時, 雷射光束呈於Y軸方向排列之狀態。 頭210使用上述軸狀集光用光學元件,而可獲得與第 1〜3實施形態-樣使用焦點深度深之軸狀集光用光學元件 的效果。 此例之光束加工裝置之光束加工方法除了基板1〇1以 46 201006597 被加工層102朝上之點與頭210配置於基板101下側,從基板 101下側朝上照射雷射光束之點以外,其餘與第1〜第3實施 形態同樣地進行。 即’與第1及第2實施形態同樣地,搬送機構104呈反覆 進行停止及搬送基板101之狀態,在基板101停止之狀態 下,於與基板101之搬送方向垂直相交之方向一面移動,一 面照射雷射光束,藉此,可於基板101之被加工層102將溝 形成條紋狀。 又,與第3實施形態同樣地,結構亦可為在以搬送機構 104以一定速度搬送基板1〇1之狀態下,與基板ιοί之搬送同 步’如上述,使頭210之雷射光束之照射位置移動成蝴蝶領 結狀。 在此例中,以被加工層102為上側,配置基板101,可 在不損傷被加工層102下,從下側支撐基板101,而可防止 基板101之撓曲。又,從基板101之下側照射雷射光束,可 以通過基板101之雷射光束進行被加工層102之加工。 因而’由於從下側支撐基板101,可在將基板1〇1保持 平坦之狀態下,進行雷射加工,故配合軸狀集光用光學元 件之焦點範圍增大,可謀求加工精確度之進一步提高,並 且可在不降低加工精確度下,增加一次可照射之雷射光束 之數,而可謀求製造時間之縮短。 又’以被加工層102為上時,有因被加工層102之加工 而產生之粉體附著於基板101之虞,藉從基板101之上側吸 引去除粉體,可防止因在基板101之被加工層102之加工而 47 201006597 產生之粉體之附著。 藉此,即使從基板ιοί下側將基板ιοί之上面側之被加 工層加工,亦不產生問題,而 <進行被加工層102之加工。 又’藉使用與第3實施形態相同之光束加工方法’可 發揮與第3實施形態相同之作用效果。 此外,支撐基板101下侧之構件只要為可防止基板101 之撓曲,且在不損傷基板1〇1下,順暢地於搬送方向移動, 為任何構件皆可,亦可為以帶搬送之構造。 【圖式簡單說^明】 第1圖係顯示本發明第1實施形態之光束加工裝置概略 之平面圖。 第2圖係顯示前述光束加工裝置之概略之正面圖。 第3圖係顯示前述光束加工裝置之概略之主要部份側 面圖。 第4圖係顯示本發明第2實施形態之光束加工裝置之概 略之平面圖。 第5圖係顯示第2實施形態之光束加工裝置之概略之截 面圖。 第6圖係顯示本發明第3實施形態之光束加工裝置之概 略之平面圖。 第7圖係顯示第3實施形態之光束加工裝置之概略之正 面圖。 第8(a)圖〜第8(d)圖係用以說明第3實施形態之光束照 射方法者。 201006597 第9 (a)圖〜第9 (b)圖係顯示第4實施形態之光束加工裝 置之概略圖。 第10圖係顯示第4實施形態之光束加工裝置之概略圖。 【主要元件符號說明】The 丨 mechanism 207 is the same as the second embodiment, and is not a substrate 101, but a processed layer, a row, and a bow of the substrate 101 from the upper side of the substrate 101. The suction mechanism 207 is disposed on the slit portion 201 so as to be disposed on the slit portion 201' with the laser beam from the lower side and covering the entire portion of the force-receiving layer 102 to be processed by the light beam. Thereby, the laser beam is irradiated, and the powder (dust) generated as described above is sucked and removed, and the β-side dust adheres to the processed layer 102 of the substrate 1〇1 or is in a state of being processed. Further, the suction mechanism 207 is fixedly disposed so as to attract the powder in the entire range of movement of the head 210 (the range in which the substrate 〇1 of the transport mechanism 204 is irradiated with laser light), and the suction mechanism 207 may also correspond to the irradiation of the laser. The mover of the location. The beam irradiation device 211 of the fourth embodiment is basically the same as the beam irradiation device 111 of the third embodiment, and has a light source device 212 that generates a laser beam, and a light beam that guides the laser beam from the light source device 212 to the head 210. Boot the system. In addition, the beam guiding system will be described with reference to the schematic diagrams shown in FIG. 9 and FIG. 1 , and the laser beam irradiated from the light source device 212 in the X-axis direction is guided to the third embodiment by the mirror 215 toward the x-axis direction. The state of the optical path length adjusting device 214 of the optical path length adjusting device 114 of the form is the same. The laser beam introduced into the optical path length adjusting means 214 is changed in the X-axis direction by the mirror 216 from the x-axis direction. The retroreflector 217 of the optical path length adjusting device 214 is movably disposed on the front side of the mirror 216 in the X-axis direction in the X-axis direction. The retroreflective mirror 217 45 201006597 is supported on the optical path length adjusting table 213 so as to be movable in the X-axis direction. The retroreflective mirror 217 is provided in place of the two mirrors 117 and 117 of the optical path length adjusting device 114 of the first embodiment. When light is incident from a predetermined direction, light is reflected and emitted in a state parallel to the incident light. The retroreflector 217 cooperates with the movement of the head 210 to move in the direction of the light (light emitted) incident on the retroreflector 217 to maintain the optical path length of the laser beam approximately constant. The light emitted from the retroreflective mirror 217 is irradiated to the mirror 219 by the mirror 218, and the mirror 219 irradiates the light to the head 210 in the X-axis direction. The head 210 is supported by the cymbal stage 209 provided on the lower side of the slit portion 2〇1 of the conveying mechanism 204 so as to be movable in the X-axis direction. The head 21〇 moves in the direction of the other axis on the lower side of the slit portion 201 of the transport mechanism 204, and maintains the state in which the laser beam is irradiated from the mirror 219 to the head 210. In addition, the light beam irradiation device 211 which is configured by the above-described components is placed on the susceptor 220, and is placed in the inside of the transport mechanism 2〇4 as described above, and the head 210 is moved in the X-axis direction. 2〇9 is disposed directly below the slit portion 201 of the conveying mechanism 204. Further, in the same manner as in the third embodiment, the head 210 is also slightly moved by a slight distance in the γ-axis direction, and the structure in the γ-axis direction is omitted in the ninth and third aspects. Further, the head 21G can simultaneously illuminate a plurality of laser beams. At this time, the laser beams are arranged in the Y-axis direction. In the head 210, the axial light collecting optical element is used, and the axial light collecting optical element having a deep depth of focus is obtained as in the first to third embodiments. The beam processing method of the beam processing apparatus of this example is disposed on the lower side of the substrate 101 with the substrate 110 facing upward from the substrate 1〇1 at 46 201006597, and the laser beam is irradiated upward from the lower side of the substrate 101. The rest is performed in the same manner as in the first to third embodiments. In other words, in the same manner as in the first and second embodiments, the transport mechanism 104 is in a state in which the substrate 101 is repeatedly stopped and transported, and the substrate 101 is stopped while moving in a direction perpendicular to the transport direction of the substrate 101. The laser beam is irradiated, whereby the groove can be formed in a stripe shape on the processed layer 102 of the substrate 101. Further, similarly to the third embodiment, the configuration may be such that the substrate 1 is transported at a constant speed by the transport mechanism 104, and the substrate is moved in the same manner as described above. The position moves into a bow tie. In this example, by arranging the substrate 101 with the processed layer 102 as the upper side, the substrate 101 can be supported from the lower side without damaging the processed layer 102, and the deflection of the substrate 101 can be prevented. Further, by irradiating the laser beam from the lower side of the substrate 101, the processed layer 102 can be processed by the laser beam of the substrate 101. Therefore, since the substrate 101 is supported from the lower side, the laser processing can be performed while the substrate 1〇1 is kept flat. Therefore, the focus range of the optical element for the shaft-shaped collecting light is increased, and the processing accuracy can be further improved. It is improved, and the number of laser beams that can be irradiated can be increased without reducing the processing precision, and the manufacturing time can be shortened. Further, when the processed layer 102 is used as the upper layer, the powder generated by the processing of the processed layer 102 adheres to the substrate 101, and the powder is removed from the upper side of the substrate 101 to prevent the powder from being removed on the substrate 101. The processing of the processing layer 102 and the adhesion of the powder produced by 47 201006597. Thereby, even if the processed layer on the upper side of the substrate ιοί is processed from the lower side of the substrate, no problem occurs, and the processing of the processed layer 102 is performed. Further, the same effects as those of the third embodiment can be exhibited by using the same beam processing method as in the third embodiment. In addition, the member on the lower side of the support substrate 101 can be prevented from being bent by the substrate 101, and can be smoothly moved in the transport direction without damaging the substrate 1〇1, and may be any member, or may be a belt transport structure. . BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing the outline of a beam processing apparatus according to a first embodiment of the present invention. Fig. 2 is a front view showing the outline of the beam processing device. Fig. 3 is a side elevational view showing the outline of the above-described beam processing apparatus. Fig. 4 is a plan view showing the outline of a beam processing apparatus according to a second embodiment of the present invention. Fig. 5 is a cross-sectional view showing the outline of a beam processing apparatus according to a second embodiment. Fig. 6 is a plan view showing the outline of a beam processing apparatus according to a third embodiment of the present invention. Fig. 7 is a front elevational view showing the outline of a beam processing apparatus according to a third embodiment. Figs. 8(a) to 8(d) are diagrams for explaining the beam irradiation method of the third embodiment. 201006597 Fig. 9(a) to Fig. 9(b) are schematic views showing a beam processing apparatus according to a fourth embodiment. Fig. 10 is a schematic view showing a beam processing apparatus according to a fourth embodiment. [Main component symbol description]

2...玻璃基板 101...基板 3...被加工層 102...被加工層 5...基板移動機構 103...光束 5a··.引導軌道 104...搬送機構 5a...引導軌道 110...頭 10...氣體飄浮機構 111...光束照射機構 11...台 112...光源裝置 11a...後側台 113...對物光學裝置 lib...前侧台 114...光程長度調整裝置 11c...縫隙部 115"•鏡 12...氣體喷出板 116.··鏡 13...吸引機構 117...鏡 13a...吸引口 118...滑件部 14...移動機構 119...軌道部 15...氣體吸引板 120...頭移動裝置 16...粉體去除機構 122...X軸滑件 50·.·光束照射機構 123...X軸移動機構 51...對物光學裝置 124... Y軸移動機構 52·.·軸狀集光用光學元件 125... X軸引導部 53...引導軌道 127...引導部 49 201006597 128…鏡 212...光源裝置 129…鏡 213...光程長度調整台 141."台 214...光程長度調整裝置 201...縫隙部 215··.鏡 203...輥 216·.·鏡 204...搬送機構 217...逆向反射鏡 205...輥支撐構件 218."鏡 207...吸引機構 219·.·鏡 209 ...X軸台 220...基座 210.··頭 Y1-Y6...箭號 211...光束照射裝置2...glass substrate 101...substrate 3...processed layer 102...processed layer 5...substrate moving mechanism 103...light beam 5a··.guide rail 104...transport mechanism 5a ...guide track 110...head 10...gas float mechanism 111...beam illumination mechanism 11...stage 112...light source device 11a...back side table 113...object optics Lib...front side table 114... optical path length adjusting device 11c... slit portion 115" mirror 12... gas ejection plate 116. mirror 13... suction mechanism 117... mirror 13a... suction port 118...slider portion 14...moving mechanism 119...track portion 15...gas suction plate 120...head moving device 16...powder removing mechanism 122.. .X-axis slide 50···beam irradiation mechanism 123...X-axis moving mechanism 51...object optics 124...Y-axis moving mechanism 52·.·axis-shaped collecting optical element 125.. X-axis guide portion 53... Guide rail 127... Guide portion 49 201006597 128...Mirror 212...Light source device 129...Mirror 213... Optical path length adjustment table 141."Table 214...Light The path length adjusting device 201...the slit portion 215··.the mirror 203...the roller 216··the mirror 204...the transport mechanism 217...the retroreflection Mirror 205...roll support member 218."mirror 207...suction mechanism 219···mirror 209 ...X-axis table 220...base 210.··head Y1-Y6...arrow 211...beam irradiation device

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Claims (1)

201006597 七、申請專利範圍: 1.種光束加工裝置,係對形成於基板一面之被加工層照 射光束而加工者,其特徵在於包含有: 光束照射機構,係將形成於前述基板—面之被加工 , 層朝下’從前述基板另-面之上顯射光束,加工前述 被加工層者; 且,則述光束照射機構具有進行軸狀集光之軸狀集 • %用光學I置’以照射軸狀集光光束。 2· -種光束加卫裝置,係對形成於基板—面之被加工層照 射光束而加工者,其特徵在於包含有: Γ 光束照射機構,係將形成於前述基板一面之被加工 * 層為朝上’從前述基板另—面之下側照㈣束,加工前 述被加工層者; 支撐機構,係從下側支撐前述基板者;及 粉體去除機構,係吸引因前述被加工層之光束照射 φ 之加工而產生之粉體者; 且,前述光束照射機構具有進行軸狀集光之軸狀集 光用光學裝置,以照射軸狀集光光束。 3.如申請專利範圍第丨或2項之光束加工裝置,其包含有: 基板移動機構,係使前述基板於至少一方向上移動 者;及 光束照射位置移動機構,係使前述軸狀集光用光學 裝置沿與前述基板之1個移動方向交叉之一方向上來回 移動者; 51 201006597 且’前述光束照射機構具有複數沿著前述基板之移 動方向之位置不同的轴狀集光用光學裝置,藉同時照射 複數個轴狀集光光束’可以—次之軸狀集光光束之掃晦 將前述被加卫層加工成條紋狀。 4.如申'^專利範圍第1至3項中任-項之光束加工裝置,其 包含有: 基板移動機構’係使前述基板於一方向上移動者; 及 光束照射位置移動機構,係與前述基板之移動同 〇 步’在使剛述轴狀集光用光學裝置沿前述基板之移動方 向移動之狀態下,使該轴狀集光用光學裝置沿與前述基 板之移動方向交又之一方向上移動者; Ί 且’在以前述移動機構搬送前述基板之狀態下,以 前述光束照射機構之光束照射,加工前述基板之前述被 加工層。 5· —種光束加工方法,係對形成於基板一面之被加工層照 射光束而加工者,其係從形成有前述被加工層之一面朝 下之前述基板之與形成有前述被加工層之面相反的另 一面上側照射軸狀集光光束,藉此,以前述基板為中 介,藉4述軸狀集光光束加工前述被加工層。 6. —種光束加工方法’係對形成於基板一面之被加工層照 射光束而加工者,其係從呈將形成有前述被加工層之一 面朝上’而從下被支撐之狀態的前述基板之與形成有前 述被加工層之面相反的另一面下側照射軸狀集光光 52 201006597201006597 VII. Patent application scope: 1. A beam processing device is a processor that irradiates a light beam on a processed layer formed on one side of a substrate, and is characterized in that: a beam irradiation mechanism is formed on the substrate-surface Processing, the layer facing downwards, the light beam is emitted from the other surface of the substrate, and the processed layer is processed; and the beam irradiation mechanism has a shaft-shaped collection of axial light collection. The axial collecting beam is illuminated. 2. A beam-lifting device for processing a light beam formed on a substrate-to-surface processed layer, comprising: Γ a beam irradiation mechanism for forming a layer formed on one side of the substrate Upwardly, the beam is processed from the lower side of the substrate, and the support layer is supported by the lower side; and the powder removing mechanism attracts the light beam due to the processed layer. The light beam irradiation means has a shaft-shaped light collecting optical device that performs axial concentrating, and illuminates the axially-shaped light collecting beam. 3. The beam processing apparatus according to claim 2 or 2, further comprising: a substrate moving mechanism for moving the substrate in at least one direction; and a beam irradiation position moving mechanism for causing the axial light collecting The optical device moves back and forth in a direction intersecting one of the moving directions of the substrate; 51 201006597 and the 'beam irradiation mechanism has a plurality of axial light collecting optical devices having different positions along the moving direction of the substrate, Irradiating a plurality of axially-collected beams of light, the broom of the axially-shaped collecting beam, can process the aforementioned layer to be striped. 4. The beam processing apparatus according to any one of claims 1 to 3, wherein: the substrate moving mechanism is configured to move the substrate in one direction; and the beam irradiation position moving mechanism is The movement of the substrate is the same as the step of moving the optical device for axial concentrating in the moving direction of the substrate, and the optical device for axial concentrating is placed in a direction parallel to the moving direction of the substrate. The mover is ' and 'the processed layer of the substrate is processed by irradiating the light beam of the light beam irradiation means in a state where the substrate is transported by the moving mechanism. A method for processing a beam by irradiating a beam formed on a layer to be processed on one side of a substrate, wherein the substrate is formed from the substrate on which one of the processed layers is formed facing downward, and the processed layer is formed. The other side of the opposite surface is irradiated with the axially-shaped light-collecting beam, whereby the processed layer is processed by the axially-collected light beam based on the substrate. 6. A method of processing a beam of light, in which a beam is irradiated onto a layer to be processed formed on one side of a substrate, and is processed from a state in which one of the processed layers is formed to face upward and is supported from below. The lower side of the substrate opposite to the surface on which the layer to be processed is formed is irradiated with the axial collecting light 52 201006597 束,藉此,以前述基板為中介,藉前述軸狀集光光束加 工前述被加工層,且從前述基板上側吸引去除因前述被 加工層之前述光束之加工而產生之粉體。 7. —種光束加工基板,係具有以如申請專利範圍第1至第4 項任一項之光束加工裝置所加工之被加工層者。 53The beam is formed by the processing of the processed layer by the axially-shaped light collecting beam, and the powder generated by the processing of the light beam of the processed layer is sucked and removed from the upper side of the substrate. 7. A beam processing substrate, which is a processed layer processed by a beam processing apparatus according to any one of claims 1 to 4. 53
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