JP2005150537A - Method and device for working plate-shaped object - Google Patents

Method and device for working plate-shaped object Download PDF

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JP2005150537A
JP2005150537A JP2003388244A JP2003388244A JP2005150537A JP 2005150537 A JP2005150537 A JP 2005150537A JP 2003388244 A JP2003388244 A JP 2003388244A JP 2003388244 A JP2003388244 A JP 2003388244A JP 2005150537 A JP2005150537 A JP 2005150537A
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processing
plate
height
chuck
laser
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Kentaro Iizuka
Seiji Miura
Koichi Shigematsu
誠治 三浦
重松  孝一
健太呂 飯塚
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Disco Abrasive Syst Ltd
株式会社ディスコ
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Abstract

PROBLEM TO BE SOLVED: To provide a processing method and a processing apparatus for a plate-like object capable of efficiently processing a desired position in the plate-like object even if the thickness of the plate-like object varies.
SOLUTION: A plate-like object having a plurality of processing scheduled lines formed in parallel on the surface is held on a chuck table, and the plate-like object held on the chuck table is subjected to predetermined processing by the processing means along the processing scheduled line. A method for processing a plate-like object to be applied, a height position detecting step for detecting a height position of a surface to be processed along a scheduled processing line of the plate-like object held by the chuck table, and a height position Corresponding to the height position detected by the detection process, the processing means is controlled in a direction perpendicular to the processing surface of the plate-like object, and a predetermined process is performed along the scheduled processing line, and the plate-like object is held. An index feed step of indexing and feeding the chuck table by an amount corresponding to the interval of the planned machining lines in an indexing direction perpendicular to the plurality of planned machining lines formed on the plate-like object, and the height position detecting step is a machining Craft The process is executed for one or more machining scheduled lines ahead in the indexing direction.
[Selection] Figure 1

Description

  The present invention holds a plate-like object having a plurality of processing lines parallel to the surface on a chuck table, and processes the plate-like object to be processed along the processing line into a plate-like object held on the chuck table. The present invention relates to a method and a processing apparatus.

  In the semiconductor device manufacturing process, a plurality of regions are partitioned by dividing lines called streets arranged in a lattice pattern on the surface of a substantially disc-shaped semiconductor wafer, and circuits such as ICs, LSIs, etc. are partitioned in these partitioned regions. Form. Then, by cutting the semiconductor wafer along the planned dividing line, the region where the circuit is formed is divided to manufacture individual semiconductor chips. In addition, optical device wafers with gallium nitride compound semiconductors laminated on the surface of sapphire substrates are also divided into individual optical devices such as light-emitting diodes and laser diodes by cutting along the planned division lines, and are widely used in electrical equipment. It's being used.

  The cutting along the division lines such as the above-described semiconductor wafer and optical device wafer is usually performed by a cutting device called a dicer. This cutting apparatus includes a chuck table for holding a workpiece such as a semiconductor wafer or an optical device wafer, a cutting means for cutting the workpiece held on the chuck table, and a chuck table and the cutting means. And a processing feed means for moving the workpiece. The cutting means includes a rotating spindle that is rotated at a high speed and a cutting blade attached to the spindle. The cutting blade is composed of a disk-shaped base and an annular cutting edge mounted on the outer periphery of the side surface of the base. The cutting edge is fixed to the base by electroforming, for example, diamond abrasive grains having a particle size of about 3 μm. It is formed to a thickness of about 20 μm.

  On the other hand, electric devices such as mobile phones and personal computers are required to be lighter and smaller, and a thinner semiconductor chip is required. As a technique for dividing the semiconductor chip thinner, a so-called dicing method called a dicing method has been put into practical use. In this tip dicing method, a dividing groove having a predetermined depth (a depth corresponding to the finished thickness of the semiconductor chip) is formed along the street from the surface of the semiconductor wafer by the above cutting device, and then the dividing groove is formed on the surface. In this technique, the back surface of the semiconductor wafer is ground and a dividing groove is exposed on the back surface to separate each semiconductor chip. The thickness of the semiconductor chip can be reduced to 50 μm or less. However, the thickness of the semiconductor wafer or the like varies, and in order to perform processing to a predetermined depth from the processing surface of the semiconductor wafer or the like by the above-described cutting device, the unevenness of the region to be processed is detected in advance and the unevenness is detected. It is necessary to follow the cutting means for processing.

  In recent years, inorganic films such as SiOF and BSG (SiOB) on the surface of semiconductor substrates such as silicon wafers, polyimides, parylenes, etc. are used to improve the processing capability of circuits such as ICs and LSIs. A semiconductor wafer having a form in which a low dielectric constant insulator film (Low-k film) made of an organic film, which is a polymer film, is laminated has been put into practical use. When a semiconductor wafer in which a low-k film is laminated is cut along a line to be divided by a cutting blade, the low-k film is laminated in multiple layers (5 to 15 layers) like mica and very brittle For this reason, when cutting along the street with a cutting blade, the low-k film peels off, and this peeling reaches the circuit, resulting in fatal damage to the semiconductor chip. In order to solve this problem, a division method is attempted in which a Low-k film is removed by irradiating a laser beam along a division line of a semiconductor wafer, and a cutting blade is positioned in the removed area for cutting. . In order to remove the Low-k film with certainty, it is necessary to adjust the focal point of the laser beam within the surface of the Low-k film or within several μm from the surface. However, as described above, the thickness of the semiconductor wafer or the like varies, and in order to adjust the focal point of the laser beam to the inside of the low-k film or several μm from the surface, the unevenness of the region irradiated with the laser beam in advance It is necessary to process the laser beam irradiation means following the unevenness.

  Furthermore, in recent years, as a method for dividing a plate-like object such as a semiconductor wafer, a pulsed laser beam having transparency to the plate-like object is used, and the focused laser beam is irradiated within the region to be divided. Laser processing methods have also been attempted. The dividing method using this laser processing method is to irradiate, for example, a laser beam in the infrared region having a condensing point from one surface side of the plate-like material and having transparency to the plate-like material. By continuously forming an altered layer melted and re-solidified along the planned division line inside the material, and applying an external force along the planned division line whose strength has decreased due to the formation of this altered layer, A plate-like object is divided. However, if the thickness of the semiconductor wafer or the like varies, the altered layer cannot be uniformly formed at a predetermined depth due to the refractive index when the laser beam is irradiated. Therefore, in order to uniformly form a deteriorated layer at a predetermined depth inside a semiconductor wafer or the like, it is necessary to detect irregularities in a region irradiated with a laser beam in advance and to process the irregularities by following the laser beam irradiation means. .

In order to solve the above-described problem, a height position detecting means for detecting the height position of the work placed on the work table is provided, and the height position of the cutting area of the work is detected by the height position detecting means. A dicing apparatus has been proposed in which a height map of a cutting area is created and a cutting position of a cutting blade is controlled based on the map. (For example, refer to Patent Document 1.)
Japanese Patent Laid-Open No. 2003-168655

  Thus, the technique disclosed in the above publication creates a height map of the cutting area by detecting the height position of the cutting area of the workpiece by the height position detecting means, and then performs cutting based on the created map. Cutting is performed while controlling the cutting position of the blade, and the height position detection process and the cutting process are separated, and therefore, it is not always efficient in terms of productivity.

  The present invention has been made in view of the above-mentioned facts, and the main technical problem thereof is a plate shape that can be efficiently processed at a desired position in the plate material even if the thickness of the plate material varies. An object is to provide a processing method and a processing apparatus for an object.

In order to solve the main technical problem, according to the present invention, a plate-like object having a plurality of processing lines formed in parallel on the surface is held on a chuck table, and the plate-like object held on the chuck table is A processing method of a plate-like object that performs predetermined processing by a processing means along the processing scheduled line,
A height position detecting step of detecting a height position of a surface on the side subjected to processing along the planned processing line of the plate-like object held by the chuck table;
A processing step of performing predetermined processing along the planned processing line while controlling the processing means in a direction perpendicular to the processing surface of the plate-like object corresponding to the height position detected by the height position detecting step. When,
An indexing and feeding step of indexing and feeding the chuck table holding the plate-like object by an amount corresponding to the interval between the scheduled machining lines in an indexing direction perpendicular to the plurality of scheduled machining lines formed on the plate-like object; Including
The height position detecting step is performed on the processing scheduled line one or more ahead in the indexing direction from the processing step.
A plate-like material processing method is provided.

Further, according to the present invention, in a processing apparatus for performing a predetermined processing along the processing planned line on a plate-like object having a plurality of processing planned lines formed in parallel on the surface,
A chuck table having a holding surface for holding the plate-like object;
Processing means for performing predetermined processing on the plate-like object held by the chuck table;
Machining feed means for relatively moving the chuck table and the machining means in the machining feed direction;
Index feed means for relatively moving the chuck table and the processing means in an index feed direction perpendicular to the process feed direction;
Machining position adjusting means for moving the machining means in a direction perpendicular to the holding surface;
A height position detecting means for detecting a height position of a surface to be processed along the planned processing line of the plate-like object held by the chuck table;
Indexing interval adjusting means for moving the height position detecting means in the indexing direction;
Storage means for storing height position information detected by the height position detection means;
Control means for controlling the processing position adjusting means based on the information stored in the storage means,
The processing apparatus characterized by this is provided.

  The processing means is laser beam irradiation means for irradiating a plate-like object held on the chuck table with a laser beam.

  In the present invention, the height position detecting step for detecting the height position of the surface on which the plate-like object held by the chuck table is processed is performed on the division line one or more ahead in the indexing direction from the processing step. The processing step is performed along the planned dividing line while controlling the processing means in a direction perpendicular to the processing surface of the plate-like object based on the information detected by the height position detection step. Even if the thickness of the object varies, it is possible to efficiently process the desired position on the plate-like object.

  Hereinafter, a processing method and a processing apparatus for a plate-like object according to the present invention will be described in more detail with reference to the accompanying drawings.

  FIG. 1 is a perspective view of a laser processing apparatus as a processing apparatus configured according to the present invention. The laser processing apparatus shown in FIG. 1 includes a stationary base 2, a chuck table mechanism 3 that is disposed on the stationary base 2 so as to be movable in a machining feed direction indicated by an arrow X, and holds a plate-like workpiece. A laser beam irradiation unit support mechanism 4 disposed on the stationary base 2 so as to be movable in an indexing direction indicated by an arrow Y perpendicular to the direction indicated by the arrow X, and a focal position adjustment indicated by an arrow Z on the laser beam unit support mechanism 4 And a laser beam irradiation unit 5 disposed so as to be movable in the direction.

  The chuck table mechanism 3 includes a pair of guide rails 31, 31 arranged in parallel along the direction indicated by the arrow X on the stationary base 2, and the direction indicated by the arrow X on the guide rails 31, 31. A first sliding block 32 movably disposed, a second sliding block 33 movably disposed on the first sliding block 32 in a direction indicated by an arrow Y, and the second sliding block A support table 35 supported by a cylindrical member 34 on a block 33 and a chuck table 36 as a workpiece holding means are provided. The chuck table 36 includes a suction chuck 361 formed of a porous material and provided with a workpiece holding surface 361a, and a disk-shaped workpiece, such as a disk-shaped semiconductor wafer, is illustrated on the suction chuck 361. Not to be held by suction means. Further, the chuck table 36 is rotated by a pulse motor (not shown) disposed in the cylindrical member 34.

  The first sliding block 32 is provided with a pair of guided grooves 321 and 321 fitted to the pair of guide rails 31 and 31 on the lower surface thereof, and along the direction indicated by the arrow Y on the upper surface thereof. A pair of guide rails 322 and 322 formed in parallel are provided. The first sliding block 32 configured as described above has the guided grooves 321 and 321 fitted into the pair of guide rails 31 and 31, thereby the direction indicated by the arrow X along the pair of guide rails 31 and 31. It is configured to be movable. The chuck table mechanism 3 in the illustrated embodiment includes a processing feed means 37 for moving the first sliding block 32 in the direction indicated by the arrow X along the pair of guide rails 31, 31. The processing feed means 37 includes a male screw rod 371 disposed in parallel between the pair of guide rails 31 and 31, and a drive source such as a pulse motor 372 for rotationally driving the male screw rod 371. One end of the male screw rod 371 is rotatably supported by a bearing block 373 fixed to the stationary base 2, and the other end is connected to the output shaft of the pulse motor 372 via a reduction gear (not shown). ing. The male screw rod 371 is screwed into a penetrating female screw hole formed in a female screw block (not shown) provided on the lower surface of the central portion of the first sliding block 32. Therefore, when the male screw rod 371 is driven to rotate forward and backward by the pulse motor 372, the first sliding block 32 is moved along the guide rails 31, 31 in the machining feed direction indicated by the arrow X.

  The second sliding block 33 is provided with a pair of guided grooves 331 and 331 which are fitted to a pair of guide rails 322 and 322 provided on the upper surface of the first sliding block 32 on the lower surface thereof. By fitting the guided grooves 331 and 331 to the pair of guide rails 322 and 322, the guided grooves 331 and 331 are configured to be movable in the direction indicated by the arrow Y. The chuck table mechanism 3 in the illustrated embodiment is a first for moving the second slide block 33 along the pair of guide rails 322 and 322 provided in the first slide block 32 in the direction indicated by the arrow Y. The indexing and feeding means 38 is provided. The first index feed means 38 includes a male screw rod 381 disposed in parallel between the pair of guide rails 322 and 322, and a drive source such as a pulse motor 382 for rotationally driving the male screw rod 381. It is out. One end of the male screw rod 381 is rotatably supported by a bearing block 383 fixed to the upper surface of the first sliding block 32, and the other end is connected to the output shaft of the pulse motor 382 via a reduction gear (not shown). Are connected. The male screw rod 381 is screwed into a penetrating female screw hole formed in a female screw block (not shown) provided on the lower surface of the central portion of the second sliding block 33. Therefore, when the male screw rod 381 is driven to rotate forward and reversely by the pulse motor 382, the second slide block 33 is moved along the guide rails 322 and 322 in the index feed direction indicated by the arrow Y.

  The laser beam irradiation unit support mechanism 4 includes a pair of guide rails 41, 41 arranged in parallel along the direction indicated by the arrow Y on the stationary base 2, and the arrow Y on the guide rails 41, 41. A movable support base 42 is provided so as to be movable in the direction. The movable support base 42 includes a movement support portion 421 that is movably disposed on the guide rails 41, 41, and a mounting portion 422 that is attached to the movement support portion 421. The mounting portion 422 is provided with a pair of guide rails 423 and 423 extending in the direction indicated by the arrow Z on one side surface in parallel. The laser beam irradiation unit support mechanism 4 in the illustrated embodiment includes a second index feed means 43 for moving the movable support base 42 in the direction indicated by the arrow Y along the pair of guide rails 41, 41. Yes. The second index feed means 43 includes a male screw rod 431 disposed in parallel between the pair of guide rails 41, 41, and a drive source such as a pulse motor 432 for rotationally driving the male screw rod 431. It is out. One end of the male screw rod 431 is rotatably supported by a bearing block (not shown) fixed to the stationary base 2 and the other end is connected to the output shaft of the pulse motor 432 via a reduction gear (not shown). Has been. The male screw rod 431 is screwed into a female screw hole formed in a female screw block (not shown) provided on the lower surface of the central portion of the moving support portion 421 constituting the movable support base 42. For this reason, when the male screw rod 431 is driven to rotate forward and backward by the pulse motor 432, the movable support base 42 is moved along the guide rails 41, 41 in the index feed direction indicated by the arrow Y.

  The laser beam irradiation unit 5 in the illustrated embodiment includes a unit holder 51 and laser beam irradiation means 52 as processing means attached to the unit holder 51. The unit holder 51 is provided with a pair of guided grooves 511 and 511 that are slidably fitted to a pair of guide rails 423 and 423 provided in the mounting portion 422. By being fitted to the guide rails 423 and 423, the guide rails 423 and 423 are supported so as to be movable in the direction indicated by the arrow Z.

  The illustrated laser beam application means 52 includes a cylindrical casing 521 that is fixed to the unit holder 51 and extends substantially horizontally. In the casing 521, as shown in FIG. 2, a pulse laser beam oscillation means 522 and a transmission optical system 523 are arranged. The pulse laser beam oscillation means 522 is composed of a pulse laser beam oscillator 522a composed of a YAG laser oscillator or a YVO4 laser oscillator, and a repetition frequency setting means 522b attached thereto. The transmission optical system 523 includes an appropriate optical element such as a beam splitter.

  Returning to FIG. 1 and continuing the description, a deflection mirror means 524 and a condenser 525 are attached to the tip of the casing 521. The light collector 525 includes a light collector case 525a and a light collecting lens (not shown) composed of a well-known group lens disposed in the light collector case 525a. A mirror case 524a of the mirror means 524 is disposed so as to be movable in the direction indicated by the arrow Z, that is, in the direction perpendicular to the workpiece holding surface 361a of the chuck table 36. In the illustrated embodiment, first focus position adjusting means 53 is provided as first processing position adjusting means for moving and adjusting the condenser 525 in the direction indicated by the arrow Z. The first focal position adjusting means 53 includes an annular flange 531 attached to the outer peripheral surface of the mirror case 524a, a plurality of guide rods 532 attached to the annular flange 531 and an outer peripheral surface of the collector case 525a. An annular flange 533 having a plurality of guided 533a inserted through the guide rod 532 attached to the annular flange 531 and an insertion hole 531a formed in the annular flange 531 are provided and inserted into the annular flange 533. The male screw rod 534 is screwed into the formed female screw hole 533b, and a pulse motor 535 for driving the male screw rod 534 to rotate. The first focal position adjusting means 53 configured in this way indicates the condenser 525 by the arrow Z along the guide rod 532 by driving the male screw rod 534 (not shown) by the pulse motor 535 in the normal direction and the reverse direction. Move in the focus position adjustment direction. Therefore, the first focal position adjusting means 53 has a function of adjusting the focal position of the laser beam irradiated by the condenser 525.

  In the laser beam irradiation means 52 configured as described above, the laser beam oscillated from the pulse laser beam oscillation means 522 is further deflected by 90 degrees by the deflection mirror 524b via the transmission optical system 523 as shown in FIG. The light reaches the condenser 525, and the workpiece held on the chuck table 36 is irradiated from the condenser 525 with a predetermined focal spot diameter D. As shown in FIG. 3, the focused spot diameter D is D (μm) = 4 × λ × f / (π when a pulsed laser beam having a Gaussian distribution is irradiated through the objective condenser lens 525b of the condenser 525. × W), where λ is the wavelength (μm) of the pulse laser beam, W is the diameter (mm) of the pulse laser beam incident on the objective condenser lens 525a, and f is the focal length (mm) of the objective condenser lens 525a. It is prescribed.

  An alignment means 6 for detecting a processing region to be laser processed by the laser beam irradiation means 52 is disposed at the front end of the casing 521 constituting the laser beam irradiation means 52. In the illustrated embodiment, the alignment unit 6 includes, in addition to a normal image sensor (CCD) that captures an image with visible light, an infrared illumination unit that irradiates a workpiece with infrared rays, and an infrared ray that is irradiated by the infrared illumination units. And an imaging device (infrared CCD) that outputs an electrical signal corresponding to infrared rays captured by the optical system, and sends the captured image signal to a control means described later.

  In the laser processing apparatus in the embodiment, the processing surface side of the plate-like object as the workpiece held on the chuck table 36, that is, the surface on the side irradiated with the laser beam (the plate shape held on the chuck table 36). A height position detecting means 7 for detecting the height position of the upper surface of the object is provided. The height position detection means 7 can use a laser length measuring device, an air gap sensor, an ultrasonic sensor, or the like, and sends a detection signal to a control means described later. In the illustrated embodiment, the height position detecting means 7 is provided on a side surface of the casing 521 constituting the laser beam irradiation means 52 and is arranged in parallel along the indexing direction indicated by the arrow Y, 71 is supported so as to be movable in a direction indicated by an arrow Y and is attached to a support block 72.

  The laser processing apparatus in the illustrated embodiment includes indexing interval adjusting means 73 that moves the position detecting means 7 in the indexing direction indicated by the arrow Y in FIG. The indexing interval adjusting means 73 includes a male screw rod 731 disposed in parallel between the pair of guide rails 71 and 71, and a drive source such as a pulse motor 732 for rotationally driving the male screw rod 731. . One end of the male screw rod 731 is rotatably supported by a bearing block 733 fixed to the side surface of the casing 521, and the other end is connected to the output shaft of the pulse motor 732 via a reduction gear (not shown). ing. The male screw rod 731 is screwed into a female screw hole 721 provided in the support block 72. Therefore, by driving the male screw rod 731 forward and backward by the pulse motor 732, the support block 72 to which the height position detecting means 7 is attached is moved along the guide rails 71 and 71 in the indexing direction indicated by the arrow Y. . The position adjusting means 73 can be moved and adjusted in the indexing direction by the interval adjusting means 73 because the intervals between a plurality of scheduled processing lines formed in parallel with a plate-like object such as a semiconductor wafer are the kind of the workpiece. This is because it is different depending on the situation.

  In the illustrated embodiment, the laser beam irradiation unit 5 moves the unit holder 51 along the pair of guide rails 423 and 423 in the direction indicated by the arrow Z, that is, in the direction perpendicular to the workpiece holding surface 361a of the chuck table 36. Second focus position adjusting means 54 is provided as second processing position adjusting means for moving. The second focal position adjusting means 54 includes a male threaded rod (not shown) disposed between the pair of guide rails 423 and 423, and a pulse for rotationally driving the male threaded rod, like the above-mentioned feeding means. A drive source such as a motor 542 is included, and a male screw rod (not shown) is driven forward and backward by a pulse motor 542, whereby the unit holder 51, the laser beam irradiation means 52, and the position detection means 7 are moved to the guide rails 423, 423. And move in the focus position adjustment direction indicated by the arrow Z.

  The laser processing apparatus in the illustrated embodiment includes a control means 10. The control means 10 is constituted by a microcomputer, and a central processing unit (CPU) 101 that performs arithmetic processing according to a control program, a read-only memory (ROM) 102 that stores a control program, etc., and a read / write that stores arithmetic results and the like A random access memory (RAM) 103, an input interface 104, and an output interface 105. The random access memory (RAM) 103 functions as a storage unit that stores height position information of the surface on the side irradiated with the laser beam in the plate-like object detected by the height position detection unit 7. Detection signals from the alignment means 6, the height position detection means 7, and the like are input to the input interface 104 of the control means 10 configured as described above. The output interface 105 outputs control signals to the pulse motor 372, pulse motor 382, pulse motor 432, pulse motor 535, pulse motor 542, pulse motor 732, laser beam irradiation means 52, and the like.

Next, a laser processing method for processing a semiconductor wafer as a plate using the above-described laser processing apparatus will be described.
FIG. 3 is a perspective view of a semiconductor wafer processed by the laser processing method according to the present invention. A semiconductor wafer 20 shown in FIG. 3 includes a plurality of division lines (processing lines) 211 arranged in a lattice pattern on the surface 21a of a semiconductor substrate 21 made of a silicon wafer (a plurality of division lines are formed in parallel to each other). A plurality of regions are partitioned, and a circuit 212 such as an IC or an LSI is formed in the partitioned region.

  The semiconductor wafer 20 configured as described above is transported on the workpiece holding surface 361a of the suction chuck 361 constituting the chuck table 36 of the laser processing apparatus shown in FIG. The surface 21a side is sucked and held at 361. The chuck table 36 that sucks and holds the semiconductor wafer 20 in this manner is moved along the guide rails 31 and 31 by the operation of the processing feed means 37 and is positioned immediately below the alignment means 6 disposed in the laser beam irradiation unit 5. It is done.

  When the chuck table 36 is positioned immediately below the alignment means 6, the alignment means 6 and the control means 10 execute an alignment operation for detecting a processing region to be laser processed of the semiconductor wafer 20. In other words, the alignment unit 6 and the control unit 10 include a division line 211 formed in a predetermined direction of the semiconductor wafer 20 and a condenser 525 of the laser beam irradiation unit 5 that irradiates a laser beam along the division line 211. Image processing such as pattern matching for alignment is performed, and alignment of the laser beam irradiation position is performed. In addition, alignment of the laser beam irradiation position is similarly performed on the division line 211 formed on the semiconductor wafer 20 and extending at right angles to the predetermined direction. At this time, the surface 21a on which the division line 211 of the semiconductor wafer 20 is formed is located on the lower side. However, the alignment means 6 corresponds to the infrared illumination means, the optical system for capturing infrared rays and the infrared rays as described above. Since the image pickup device configured with an image pickup device (infrared CCD) or the like that outputs an electric signal is provided, the planned division line 211 can be picked up through the back surface 21b.

  As described above, when the division planned line 211 formed on the semiconductor wafer 20 held on the chuck table 36 is detected and the laser beam irradiation position is aligned, the chuck table 36 is moved. As shown in FIG. 5, one end (the left end in the figure) of the predetermined division line 211-1 is positioned immediately below the height position detection means 7. The chuck table 36 is moved in the direction indicated by the arrow X1, and the laser beam is irradiated by the height position detecting means 7 while moving to the other end (right end in the figure) of the predetermined division planned line 211-1 of the semiconductor wafer 20. The height position of the surface to be processed (side to be processed) (the upper surface of the semiconductor wafer 20 held on the chuck table 36) is detected, and the detection signal is sent to the control means 10. And the control means 10 is the height position detection signal sent from the height position detection means 7 and the surface on the side that irradiates the laser beam along the predetermined division line 211-1 from the movement position of the chuck table 36. X and Z coordinate values are calculated and temporarily stored in a random access memory (RAM) 103 (height position detection step).

  In the illustrated embodiment, the height position detection means 7 and the condenser 525 of the laser beam irradiation means 52 are offset by an amount corresponding to the interval between the division lines 211 in the indexing direction indicated by the arrow Y in FIG. It is positioned as. Therefore, the height position detection step for detecting the height position of the upper surface of the plate-like object along the scheduled division line 211 by the height position detection means 7 is 1 in the indexing direction in the illustrated embodiment from the processing step described later. This is executed for the target division line 211.

  When the height position detecting step for detecting the height position of the upper surface of the plate-like object along the predetermined scheduled cutting line 211 is performed as described above, the first index feeding means 38 is operated from the state shown in FIG. Then, the chuck table 36, that is, the semiconductor wafer 20, is indexed and fed in the direction indicated by the arrow Y in FIG. 1 (direction perpendicular to the paper surface in FIG. 5) by an amount corresponding to the interval between the division lines 211 (index feeding step). As a result, as shown in FIG. 6, the division planned line 211-1 on which the above-described height position detection step has been performed is positioned at a position corresponding to the condenser 524 of the laser beam irradiation means 52, and the next scheduled cutting line 211. -2 is positioned at a position corresponding to the position detecting means 7.

If the index feeding step is performed as described above, the other end of the predetermined division line 211-1 whose height position is detected as shown in FIG. 7A (the right end in FIG. 7A). ) Is positioned immediately below the condenser 525 of the laser beam irradiation means 52. Then, while irradiating a laser beam from the condenser 525, the chuck table 36 is moved in a direction indicated by an arrow X2 at a predetermined processing feed speed as shown in FIG. To the other end (the right end in FIG. 7B) (laser beam irradiation step: processing step)). During this time, the control means 10 uses the first focal position adjustment means 53 based on the X and Z coordinate values of the surface on the laser light irradiation side stored in the random access memory (RAM) 103 in the height position detection step described above. The pulse motor 535 is controlled to adjust the height position of the condenser 525, that is, the Z-axis direction position. That is, the control means 10 first obtains a correction value corresponding to the X and Z coordinate values of the surface of the semiconductor wafer 20 on which the laser beam is irradiated by the following equation.
Correction value = (reference value−current location) × refractive coefficient Here, the reference value is the height position at the reference position (for example, the standard thickness of the wafer).
The current location is the height at the current location
The refraction coefficient is the bending coefficient of the workpiece relative to the atmosphere (for example, the field of silicon
0.25)
When the correction value is obtained as described above, the control means 10 obtains the Z-axis direction position of the condenser 524 by the following equation.
Z-axis direction position = set height position + correction value Here, the set height position is the Z-axis direction position at the reference position. Based on the Z-axis direction position obtained as described above, the control means 10 The condenser 525 is positioned at the Z-axis direction position by controlling the pulse motor 535 of the focal position adjusting means 53.
As a result, the altered layer 210 formed in the semiconductor wafer 20 is uniformly exposed on the surface opposite to the laser beam irradiation side (the lower surface of the semiconductor wafer 20 held on the chuck table 36). The Thus, in the illustrated embodiment, the altered layer can be formed at a desired position in the thickness direction of the semiconductor wafer 20.

In addition, the processing conditions in the said laser beam irradiation process are set as follows, for example.
Laser: YVO4 pulse laser Wavelength: 1064nm
Pulse energy: 10μJ
Repetition frequency: 100 kHz
Pulse width: 25 ns
Condensing spot diameter: φ1μm
Peak power density at the focal point: 5.1 × 10E10 W / cm 2
Processing feed rate: 100 mm / sec

  When the thickness of the semiconductor wafer 20 is thick, the plurality of altered layers 210a and 210b are obtained by changing the condensing point P stepwise as shown in FIG. , 210c is desirable. The altered layers 210a, 210b, and 210c are preferably formed by stepwise shifting the condensing point of the laser beam in the order of 210a, 210b, and 210c.

  In parallel with the laser beam irradiation step described above, the height position detection step for the next scheduled division line 211-2 is executed. That is, the height position detection means 7 detects the height position of the upper surface of the plate-like object along the next division line 211-2 and sends the detection signal to the control means 10. Then, the control means 10 sends the height position detection signal sent from the height position detection means 7 and the surface on the side that irradiates the laser beam along the predetermined division line 211-2 from the movement position of the chuck table 36. X and Z coordinate values are calculated and temporarily stored in a random access memory (RAM) 103. In this way, the height position detection step is executed for the division line that is one (or several) ahead in the indexing direction from the laser beam irradiation step. Processes can be executed in parallel, improving work efficiency and increasing productivity.

  As described above, when the height position detection step and the laser beam irradiation step are performed along all the division lines 211 extending in a predetermined direction of the semiconductor wafer 20, the chuck table 36 is rotated by 90 degrees. At least, the height position detecting step and the laser beam irradiating step are executed along each division planned line extending at right angles to the predetermined direction. Thus, if the height position detection step and the laser beam irradiation step are executed along all the division lines 211 formed on the semiconductor wafer 20, the chuck table 36 holding the semiconductor wafer 20 is First, the semiconductor wafer 20 is returned to the position where the semiconductor wafer 20 is sucked and held. Here, the sucking and holding of the semiconductor wafer 20 is released. Then, the semiconductor wafer 20 is transferred to the dividing step by a transfer means (not shown).

  Although the present invention has been described based on the illustrated embodiment, the present invention is not limited to the embodiment, and various modifications are possible within the scope of the gist of the present invention. For example, in the above-described embodiment, an example is shown in which the height position detection step is executed for the division line one line ahead in the indexing direction from the laser beam irradiation step, but the height position detection step is indexed from the laser beam irradiation step. You may perform with respect to the division | segmentation planned line several ahead in a direction. In the illustrated embodiment, the present invention is applied to a laser processing apparatus. However, the present invention can be applied to other processing apparatuses such as a cutting apparatus.

The perspective view of the laser processing apparatus as a processing apparatus comprised according to this invention. The block diagram which shows simply the structure of the laser beam processing means with which the laser processing apparatus shown in FIG. 1 is equipped. FIG. 3 is a simplified diagram for explaining a focused spot diameter of a laser beam irradiated from the laser beam processing unit shown in FIG. 2. The perspective view of the semiconductor wafer as a plate-shaped object processed by the laser processing method by this invention. Explanatory drawing of the height position detection process in the laser processing method by this invention. Explanatory drawing of the index sending process in the laser processing method by this invention. Explanatory drawing of the laser beam irradiation process in the laser processing method by this invention. Explanatory drawing when the thickness of the semiconductor wafer as a plate-shaped object in the laser beam irradiation process in the laser processing method by this invention is thick.

Explanation of symbols

2: stationary base 3: chuck table mechanism 31: guide rail 36: chuck table 4: laser beam irradiation unit support mechanism 41: guide rail 42: movable support base 5: laser beam irradiation unit 51: unit holder 52: laser beam processing means ( Processing means)
524: Deflection mirror means 525: Condenser 53: First focus position adjustment means 54: Second focus position adjustment means 7: Height position detection means 73: Indexing interval adjustment means 10: Control means 20: Semiconductor wafer 21 : Semiconductor substrate 210: Altered layer 211: Divided planned line (processed planned line)
212: Circuit

Claims (3)

  1. A plate-like object on which a plurality of processing lines are formed in parallel on the surface is held on a chuck table, and predetermined processing is performed on the plate-like object held on the chuck table by processing means along the processing line. A processing method of a plate-like object,
    A height position detecting step of detecting a height position of a surface on the side subjected to processing along the planned processing line of the plate-like object held by the chuck table;
    A processing step of performing predetermined processing along the planned processing line while controlling the processing means in a direction perpendicular to the processing surface of the plate-like object corresponding to the height position detected by the height position detecting step. When,
    An indexing and feeding step of indexing and feeding the chuck table holding the plate-like material in an indexing direction perpendicular to the plurality of scheduled machining lines formed on the plate-like material by an amount corresponding to the interval between the scheduled machining lines; Including
    The height position detecting step is performed on the processing scheduled line one or more ahead in the indexing direction from the processing step.
    A method for processing a plate-like product.
  2. In a processing apparatus that performs a predetermined processing along a planned processing line on a plate-like object having a plurality of processing planned lines formed in parallel on the surface,
    A chuck table having a holding surface for holding the plate-like object;
    Processing means for performing predetermined processing on the plate-like object held by the chuck table;
    Machining feed means for relatively moving the chuck table and the machining means in the machining feed direction;
    Index feed means for relatively moving the chuck table and the processing means in an index feed direction perpendicular to the process feed direction;
    Machining position adjusting means for moving the machining means in a direction perpendicular to the holding surface;
    A height position detecting means for detecting a height position of a surface to be processed along the planned processing line of the plate-like object held by the chuck table;
    Indexing interval adjusting means for moving the height position detecting means in the indexing direction;
    Storage means for storing height position information detected by the height position detection means;
    Control means for controlling the processing position adjusting means based on the information stored in the storage means,
    A processing apparatus characterized by that.
  3.   The processing apparatus according to claim 2, wherein the processing unit is a laser beam irradiation unit that irradiates a plate-like object held on the chuck table with a laser beam.
JP2003388244A 2003-11-18 2003-11-18 Method and device for working plate-shaped object Pending JP2005150537A (en)

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Publication number Priority date Publication date Assignee Title
SG125965A1 (en) * 2003-07-09 2006-10-30 Disco Corp Laser beam processing method and laser beam processing machine
JP2007266557A (en) * 2006-03-30 2007-10-11 Renesas Technology Corp Method of manufacturing semiconductor device
JP2010010209A (en) * 2008-06-24 2010-01-14 Tokyo Seimitsu Co Ltd Laser dicing method
DE102006018899B4 (en) * 2005-04-26 2014-01-02 Disco Corp. Laser beam processing machine
JP2014503359A (en) * 2010-12-16 2014-02-13 バイストロニック レーザー アクチェンゲゼルシャフト Laser beam machining apparatus and laser machining method with single optical focusing lens
JP2014099521A (en) * 2012-11-15 2014-05-29 Disco Abrasive Syst Ltd Laser processing method and laser processing device
US9012805B2 (en) 2006-10-03 2015-04-21 Hamamatsu Photonics K.K. Laser working method

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JPH10189496A (en) * 1996-12-24 1998-07-21 Toshiba Corp Method and machine for cutting wafer
JP2000306865A (en) * 1999-02-17 2000-11-02 Toshiba Corp Wafer-cutting method and apparatus
JP2003088979A (en) * 2002-03-29 2003-03-25 Hamamatsu Photonics Kk Laser beam machining method

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JPS53114347A (en) * 1977-12-07 1978-10-05 Toshiba Corp Working method for semiconductor device
JPH10189496A (en) * 1996-12-24 1998-07-21 Toshiba Corp Method and machine for cutting wafer
JP2000306865A (en) * 1999-02-17 2000-11-02 Toshiba Corp Wafer-cutting method and apparatus
JP2003088979A (en) * 2002-03-29 2003-03-25 Hamamatsu Photonics Kk Laser beam machining method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG125965A1 (en) * 2003-07-09 2006-10-30 Disco Corp Laser beam processing method and laser beam processing machine
DE102006018899B4 (en) * 2005-04-26 2014-01-02 Disco Corp. Laser beam processing machine
JP2007266557A (en) * 2006-03-30 2007-10-11 Renesas Technology Corp Method of manufacturing semiconductor device
US9012805B2 (en) 2006-10-03 2015-04-21 Hamamatsu Photonics K.K. Laser working method
JP2010010209A (en) * 2008-06-24 2010-01-14 Tokyo Seimitsu Co Ltd Laser dicing method
JP2014503359A (en) * 2010-12-16 2014-02-13 バイストロニック レーザー アクチェンゲゼルシャフト Laser beam machining apparatus and laser machining method with single optical focusing lens
JP2017221979A (en) * 2010-12-16 2017-12-21 バイストロニック レーザー アクチェンゲゼルシャフト Laser beam machining device and method of laser machining comprising single lens for light focussing
JP2014099521A (en) * 2012-11-15 2014-05-29 Disco Abrasive Syst Ltd Laser processing method and laser processing device

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