TW201001066A - Photosensitive resin composition, and photosensitive resin laminate comprising the same - Google Patents

Photosensitive resin composition, and photosensitive resin laminate comprising the same Download PDF

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TW201001066A
TW201001066A TW98111861A TW98111861A TW201001066A TW 201001066 A TW201001066 A TW 201001066A TW 98111861 A TW98111861 A TW 98111861A TW 98111861 A TW98111861 A TW 98111861A TW 201001066 A TW201001066 A TW 201001066A
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Taiwan
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photosensitive resin
group
compound
resin composition
substrate
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TW98111861A
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Chinese (zh)
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TWI398725B (en
Inventor
Yosuke Hata
Youichiroh Ide
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Asahi Kasei E Materials Corp
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides

Abstract

Disclosed is a photosensitive resin composition which enables the formation of a pattern thereon, and can be formed into a flexible dry film that produces a sufficiently reduced quantity of cutting dusts when the film is cut. Specifically disclosed are: a photosensitive resin composition comprising (A) an alkali-soluble phenolic resin, (B) a photosensitizing agent having a 1,2-naphthoquinonediazide group, and (C) an alkali-soluble resin having a group derived from an aromatic hydroxy compound in a side chain; and/or a photosensitive resin composition comprising (A) an alkali-soluble phenolic resin, (B) a photosensitizing agent having a 1,2-naphthoquinonediazide group, and (D) a compound which is induced from at least one compound selected from the group consisting of Bisphenol A, Bisphenol E, Bisphenol F, Bisphenol S and a compound produced by hydrogenating any one of the above-mentioned compounds and which has at least one hydroxy group at the terminal.

Description

201001066 六、發明說明: 【發明所屬之技術領域】 /發明係關於-種利用驗性水溶液可進行顯影之感光性 樹月曰組合物及使用其之感光性樹脂積層體、以及該等之用 途,上述感光性樹脂組合物適用於印刷電路板之製造,冗 =搭載用導線架(以下稱為導線架)之製造,金屬掩模製 造寺之金屬落精密加工,液晶顯示元件等之薄膜電晶體、 BGA(BaU Gnd Array,球栅陣列)、CSP(Chip Size -一’晶片尺寸封裝)等之半導體封裝之製造,平面顯 示器領域之IT〇(IndiumTin〇xide,氧化銅錫)電極、定址 電極、或電磁波遮罩等構件之製造,以及適宜用作藉由喷 基材進行加工時的保護罩構件之光阻圖案之製造。 【先前技術】 作為半導租積體電路、液晶顯示元件、印刷電路 圖等所採用之圖像形成方法,已知有利用將含她 ,、疊鼠化合物之感光性樹脂組合 物作為原料之正型光阻 組合物而形成正型二==由塗佈該感光性樹脂 尤阻之h形時,其塗佈厚度一般為0 5〜 =成若,正型光阻’則可達成寬尺寸範圍之圖像 .八尺寸乾圍例如自〇·3 _左右之亞半微米(sub_ 祕麗剛)範圍者廣泛地遍及至數十〜數百师左 大之尺寸範圍者。藉此,At ^ 微細加工。㈣此夠對多種多樣之基板表面進行 於•液晶顯示器)等之領域 139313.doc 201001066 中,亦隨著TFT(Thin Flim Transistor,薄膜電晶體)液晶、 STN(SUper Twisted Nematic ’超扭轉向列)液晶等技術之進 展而圖像之線寬變細,微細化之傾向愈為增強。例如,於 先前之使用TN(Twisted Nematic,扭轉向列)、STN液晶之 兀件中,採用200 μηι至數百μηι左右之圖像設計尺寸,相 對於此,最近由於新技術之開發而圖像之最小設計尺寸達 到1 00 μιη以下。又,於回應性或成像性良好之TFT顯示元 件中,圖像設計尺寸提高至數μηι之水準。 作為光阻材料所期待之特性’可舉出:保持上述微細之 加工此力並且應對大面積化。亦即,應對近年來基板不 斷大型化之液晶顯示器、以及最初開始就面向大晝面之 PDP(Pla_ Display Panel,電漿顯示器)等。對於該等基 板而言,使面内之膜厚均句性更為優異正成為重要之技 術。又,作為大面積顯示器之共同課題,可舉出:進一步 降低成本、以及製造時所使用之光阻之節液化。 於上述課題中’為進一步改善光阻之面内之膜厚均句 性、'且達成光阻原料之節液化,業者接連不斷地對其塗佈 方式進订研九。其結果為,正在開發新的狹縫塗佈法來代 替先前較為普遍之旋轉塗佈法。可預測該等技㈣夠應對 尺寸為550 mmx68〇 _以下之基板。然而,於面向更大型 基板之情料,可㈣龍等技術之應用較為困難。 再者’於印刷電路基板之領域中,目前廣泛使用所謂之 負型乾膜光阻。所謂負型乾膜光阻,係指使用 之聚醋膜作為支㈣,於該支持體上塗 ^ 139313.doc 201001066 10〜100 μχη之負型感光性樹脂組合物’進而於其上方積層 4〜40 μιη厚之聚烯烴膜作為保護膜者。該負型乾膜光阻^ 技術亦被應用於寬度為600 mm左右之印刷電路基板。但 是:於用於印刷電路基板領域之情形時,負型乾膜光阻所 要求之解析度充其量為30〜300 μηι左右。 。以下,就使用負型乾膜光阻之印刷電路板之製作加以簡 單說明。首先’於負型乾膜光阻存在保護膜之情形時,則 將該保護膜去除’卩負型感光性樹脂組合物與製作印刷電 路板所用之基材相接觸之方式而進㈣壓,通過支持體以 活性光進行曝光,使感光性樹脂組合物硬化。其次,通常 使用濃度為i質量。/。之碳酸鈉水溶液所代表之㈣水溶液 將未曝光之感光性樹脂組合物分散去除而進行顯影。其 後,利用氯化銅水溶㈣基材上之銅進行_。然後,利 用濃度為2〜3%之氫氧化鈉㈣液或氫氧化鉀水溶液將硬 化之感光性樹脂組合物全部剝離去除。 ί 然而’製造LCD用TFT時所需|夕阆你上 吓南要之圖像加工技術如上所 逑,解析度例如為2〜Π)陶左右,明顯高於印刷電路基板 領域。除此之外亦需要如下技術:無金屬離子顯影,使用 有機剝離液之剝離,ΙΤΟ或Ta ' Α丨箄今麗鴒π 寺金屬溥膜及SiNx、 ΠΌ等無機薄膜之姓刻加工。為 …對5亥荨技術,而對光阻 有如下要求·膜厚為數、對久絲、成 μ對各種域完錢之金屬薄 膜或無機該之《性提昇ί厚均勾性進—步改善、對 具有1 μηι左右的凹凸之TFT現右®电>+ 1現有圖案之追隨性提昇、對於201001066 VI. The invention relates to a photosensitive tree laminate composition which can be developed by using an aqueous solution, and a photosensitive resin laminate using the same, and the use thereof. The photosensitive resin composition is suitable for the production of a printed circuit board, and is redundantly used for manufacturing a lead frame for mounting (hereinafter referred to as a lead frame), a metal mask for metal precision processing, and a thin film transistor such as a liquid crystal display element. Manufacture of semiconductor packages such as BGA (BaU Gnd Array), CSP (Chip Size - a 'wafer size package), IT 〇 (Indium Tin/xide) electrodes, address electrodes, or The manufacture of components such as electromagnetic wave masks and the manufacture of photoresist patterns suitable for use as protective cover members when processed by a spray substrate. [Prior Art] As an image forming method used for a semi-conductive body circuit, a liquid crystal display device, a printed circuit diagram, or the like, a positive type using a photosensitive resin composition containing her or a compound of a hamster compound as a raw material is known. The photoresist composition forms a positive type. == When the photosensitive resin is coated with a h-shape, the coating thickness is generally 0 5~=, if the positive photoresist is used, a wide size range can be achieved. Image. Eight-size dry circumference, for example, from the range of 半·3 _ around the sub-micron (sub_ 秘丽刚) is widely spread to the size range of tens to hundreds of divisions. Thereby, At ^ micromachining. (4) This is sufficient for the surface of a variety of substrates in the field of liquid crystal displays, etc. 139313.doc 201001066, also with TFT (Thin Flim Transistor), STN (SUper Twisted Nematic 'super twisted nematic) As technology such as liquid crystal progresses, the line width of an image becomes thinner, and the tendency to be finer is enhanced. For example, in the previous TN (Twisted Nematic) and STN liquid crystal, the image size was designed from 200 μηι to hundreds of μηι, and the image was recently developed due to the development of new technologies. The minimum design size is less than 100 μηη. Further, in a TFT display element having good responsiveness or imageability, the image design size is increased to a level of several μm. The characteristics expected as a photoresist material are as follows: the above-mentioned fine processing force is maintained and the area is increased. In other words, the liquid crystal display in which the substrate has been increasing in size in recent years, and the PDP (Pla_ Display Panel, plasma display) which has been initially applied to the large surface. For these substrates, it is an important technology to make the film thickness in the plane more uniform. Further, as a common problem of the large-area display, it is possible to further reduce the cost and the liquefaction of the photoresist used in the production. In the above-mentioned problem, in order to further improve the film thickness in the surface of the photoresist, and to achieve the liquefaction of the photoresist material, the company has continuously researched and applied the coating method. As a result, a new slit coating method is being developed to replace the conventional spin coating method. It is predicted that these techniques (4) can cope with substrates with dimensions of 550 mm x 68 〇 _. However, in the case of facing larger substrates, the application of technologies such as (4) Dragon is more difficult. Further, in the field of printed circuit boards, so-called negative dry film photoresists are widely used at present. The negative dry film photoresist refers to the use of the polyester film as a support (4), and the negative photosensitive resin composition of the 139313.doc 201001066 10~100 μχ is coated on the support and the layer 4 to 40 is laminated thereon. The μιη thick polyolefin film is used as a protective film. The negative dry film photoresist technology is also applied to printed circuit boards having a width of about 600 mm. However, when used in the field of printed circuit boards, the resolution required for negative dry film photoresist is at most about 30 to 300 μηι. . Hereinafter, the fabrication of a printed circuit board using a negative dry film photoresist will be briefly described. First, when a protective film is present in a negative dry film resist, the protective film is removed by a method in which the negative electrode type photosensitive resin composition is brought into contact with a substrate for producing a printed circuit board. The support is exposed to active light to cure the photosensitive resin composition. Second, the concentration is usually used as the mass of i. /. (IV) Aqueous solution represented by the aqueous solution of sodium carbonate The unexposed photosensitive resin composition is dispersed and removed for development. Thereafter, the copper on the substrate is immersed in copper (4). Then, the hardened photosensitive resin composition was completely peeled off by using a sodium hydroxide (tetra) solution or a potassium hydroxide aqueous solution having a concentration of 2 to 3%. ί However, when you need to manufacture TFTs for LCDs, you can scare the image processing technology of the South as above, and the resolution is, for example, 2~Π), which is significantly higher than that of printed circuit boards. In addition to this, the following technologies are also required: no metal ion development, stripping using an organic stripping solution, or Ta' Α丨箄 鸰 鸰 鸰 鸰 溥 溥 溥 溥 溥 及 及 及 及 及 及 及 及 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 For the 5 荨 荨 technology, and the following requirements for the photoresist · The film thickness is a number, for the long-term silk, into the μ of the metal film of various fields, or the inorganic "sexual improvement" For the TFT with a bump of about 1 μηι, the right-handed electric >+ 1 existing pattern is improved, for

Mm寬的基板之層展高速化等,因而完全超出了習知型 1393l3.doc 201001066 之乾膜光阻之極限。總之,為應對LCD及PDP業界之要 求,先前之將正型液狀光阻直接塗佈於基板上之方法、或 者將負型乾膜光阻轉印至基板上之方法存在極限。為解決 上述課題,業者正在考慮採用正型乾膜光阻,但尚未加以 實用。 作為远5為止之正型光阻之材料,例如專利文獻1及2中 揭示有以苯酚酚醛清漆樹脂作為主成分且以丨,2-萘醌二疊 氮確酸S旨作為感光性成分者。然而,於將其直接應用於二 臈光阻之情形時,因塗佈性差故無法較厚地塗佈於支持體 上’又’即使可較薄地塗佈,但膜質較脆而缺乏柔軟性, 因此在將其製成捲筒狀之產品時有困難。X,專利文獻3 中亦揭示有1使膜柔軟化而導人使乾性油㈣樹脂反應 所得之化合物。但是’目前使用該等材料之正型乾膜光阻 尚未達到實用化。以下進行詳細說明。 、 具有所需膜寬之捲筒狀製品係以如下方式獲得。首先, 通常經過將正型感光性樹脂組合物塗佈於支持體上等,而 :成較寬之捲筒。接著,藉由切口來切割該捲“具有所 2膜寬。又,為將感光性樹脂組合物積層於形成有圖像 :案之基板上’通常自上述捲筒狀製品抽出乾膜光阻,一 2用貼合機壓接於基板上—邊進行熱轉印。於該層壓過 度或層難,將乾膜光阻切割成基板長度方向之規定長 於使用具有膜質較脆的 阻之情形時,會產生以下 正型感光性樹脂組合物之乾膜光 問題:於上述切割時會產生該正 139313.doc 201001066 型感光性樹脂組合物之切屑(以下簡稱為切屑)。又,即使 f層廢時將乾膜光阻切割成基板長度方向之規定長度,亦 、易自切α彳面產生切屑。該等切屑會變為粉塵而污染基板 或層疋機之運作環境’且會附著於基板上所積層之支持體 上。其結果為,圖像圖案容易產生缺陷。 [專利文獻1]日本專利特開平06_〇27657號公報 [專利文獻2]曰本專利特開2〇〇〇_1〇5466號公報 [專利文獻3]日本專利特開2〇〇7 3 16577號公報 【發明内容】 [發明所欲解決之問題] 本發明係ϋ於上述情形而完成者,其目的在於提供一種 能夠形成圖案、以乾膜方式形成時感光性樹脂組合物較為 柔軟、即使對該膜進行切割亦可充分抑制切屑之產生之感 光性樹脂組合物及使用其之感光性樹脂積層體。 [解決問題之技術手段] 本發明者們為解決上述課題而進行了研究,發現藉由使 用具有以下構成之感紐樹脂組合物可解決上述課題,從 而完成了本發明。 本發明係如下述。 Π] —種感光性樹脂組合物,其係含有(Α)鹼溶性酚樹 脂、⑻含!,2-萘酿二疊氮基之感❹卜及(c)側鏈上具有 源自芳香族經基化合物之基之驗溶性樹脂而成者。 [2]如上述[1]所記载之感光性樹脂組合物,其中上述(c) 成分為含有㈣苯乙烯作為共聚合成分之驗溶性樹脂。 139313.doc 201001066 [3] 如上述[1]或[2]所記载之感光性樹脂組合物,其中相 對於上述感光性樹脂組合物全體之量,含有2〇〜9〇質量% 之上述(A)成分、卜75質量%之上述(b)成分,而且含有 1〜75質量。/。之上述(C)成分。 [4] 如上述[1]至[3]中任—項所記載之感光性樹脂組合 物,其進而含有(D)塑化劑。 [5] 如上述[1]至[4]中任—項所記載之感光性樹脂組合 物,其含有以下述通式(1)所表示之化合物之^^蔡酿二疊 氮磺酸酯作為上述(B)成分: [化1]The layering of the Mm-wide substrate is accelerated, and thus completely exceeds the limit of the dry film photoresist of the conventional type 1393l3.doc 201001066. In summary, in order to meet the requirements of the LCD and PDP industries, there has been a limit to the method of directly applying a positive liquid photoresist to a substrate or transferring a negative dry film photoresist to a substrate. In order to solve the above problems, the industry is considering the use of positive dry film photoresist, but it has not been put into practical use. For example, in the materials of the positive-type resists of the fifth aspect, for example, Patent Literatures 1 and 2 disclose that a phenol novolak resin is used as a main component, and a 2-naphthoquinonediazide acid S is used as a photosensitive component. However, when it is directly applied to the case of a tantalum photoresist, it cannot be applied to the support thickly due to poor coatability. 'By even if it can be applied thinly, the film is brittle and lacks flexibility. It is difficult to make it into a roll-shaped product. X, Patent Document 3 also discloses a compound obtained by softening a film to induce a reaction of a dry oil (tetra) resin. However, the positive dry film photoresist that currently uses these materials has not yet reached practical use. The details are described below. A rolled product having a desired film width is obtained in the following manner. First, the positive photosensitive resin composition is usually applied to a support or the like to form a wider roll. Next, the roll is cut by the slit "having a film width of 2, and in order to laminate the photosensitive resin composition on the substrate on which the image is formed", the dry film photoresist is usually taken out from the roll-shaped article. A 2 is bonded to the substrate by a bonding machine for thermal transfer. If the lamination is excessive or difficult, the dry film photoresist is cut into the length direction of the substrate longer than when the film is more brittle. There is a problem of dry film light of the following positive photosensitive resin composition: the chips of the photosensitive resin composition of the positive 139313.doc 201001066 type (hereinafter referred to as chips) are generated at the time of the above cutting. The dry film photoresist is cut into a predetermined length in the longitudinal direction of the substrate, and the chips are easily cut from the α-face. The chips become dust and contaminate the operating environment of the substrate or the laminating machine and adhere to the substrate. As a result, the image pattern is likely to be defective. [Patent Document 1] Japanese Patent Laid-Open Publication No. Hei 06 No. 27657 [Patent Document 2] Patent Publication No. 2〇〇〇_1〇 Bulletin No. 5466 [Patent Document 3] Japanese Patent Laid-Open Publication No. Hei 2 No. 3 3 16577 [Disclosed] The present invention has been made in view of the above circumstances, and an object thereof is to provide a pattern capable of forming a film in a dry film manner. In the present invention, the photosensitive resin composition is soft, and the photosensitive resin composition which can sufficiently suppress the generation of chips and the photosensitive resin laminate using the same can be used. In order to solve the above problems, it has been found that the above problems can be solved by using a sensory resin composition having the following constitution. The present invention is as follows. Π] A photosensitive resin composition, The invention comprises a (Α) alkali-soluble phenol resin, (8) a sensory resin containing (2) a naphthyl group, and (c) a solvent-soluble resin having a group derived from an aromatic radical compound in a side chain. [2] The photosensitive resin composition according to the above [1], wherein the component (c) is a test resin containing (tetra) styrene as a copolymerization component. 139313.doc 201001066 [3] as above [1] The photosensitive resin composition of the above-mentioned (2) is contained in the above-mentioned (A) component, and 75 mass% of the above-mentioned (A). (b) The photosensitive resin composition as described in any one of the above-mentioned items [1] to [3], further comprising (D). [5] The photosensitive resin composition according to any one of the above-mentioned items (1), which contains a compound represented by the following formula (1) A sulfonate as the above component (B): [Chemical 1]

{式中’ 1〜116分別獨立為氫、鹵素、ci〜c4之烷基、烯 基或羥基,R7及R8分別獨立為氫、i素或C1〜C4之烷基, 而且R9〜R"分別獨立為氫或C1〜以之烷基卜 [6]如上述[1]至[5]中任—項所記載之感光性樹脂組合 物^中上述(D)成分為由選自雙酚a、雙酚£、雙酚F及雙 紛S以及將*等氫化而獲得之化合物所組成之群中的至 139313.doc 201001066 少一種化合物所衍生,並且末端具有至少丨個經基之化人 物。 。 [7] 一種感光性樹脂積層體,其至少包含支持體、及由 如上述[1]至[6]中任_項所記載之感光性樹脂組合物所形 成之感光性樹脂層。 [8] 種光阻捲筒,其係將如上述m所記載之感光性樹 脂積層體製成捲筒狀者。 f ϋ [9] 一種光阻圖幸夕取> +、, ^ $成方法’其依序包括:將如上述 [8]所記載之感光性始+ p 九I"树知積層體的感光性樹脂層積層於基 上之積層步驟、對减异地 •次先丨生树脂層進行曝光之曝光步驟' 將感光之感光性樹脂層去除之顯影步驟。 [10] 如上述[9]所記載之光阻圖案之形成方法 述曝光步财進行直騎圖㈣、中於上 [11] —種印刷電路板 ,L 之製k方法,其進而包括:對藉由 σ上述[9]或[10]所記载 行餘刻讀敷之㈣。法㈣成有光阻圖案之基板進 [12] —種導線架之製造 或Π0]所記載之方法而有?、包括:對藉由如上述[9] 步驟。 成有先阻圖案之基板進行蝕刻之 [13] —種半導體圖案之 如上述[9]或[1G]所記載之^ 其進而包括··對藉由 行钮刻或鑛敷之步驟。^形成有光阻圖案之基板進 Π4]—種薄膜電晶體之製 述[9]或[10]所記载之方土 。万法,其包括:對藉由如上In the formula, 1 to 116 are independently hydrogen, halogen, ci~c4 alkyl, alkenyl or hydroxy, and R7 and R8 are each independently hydrogen, i or C1 to C4 alkyl, and R9 to R" The photosensitive resin composition as described in any one of the above-mentioned items [1] to [5], wherein the component (D) is selected from the group consisting of bisphenol a, Between bisphenol £, bisphenol F and bisphenol S and a group of compounds obtained by hydrogenation of *, 139313.doc 201001066 is derived from one less compound and has at least one quinone at the end. . [7] A photosensitive resin layered body comprising at least a support, and a photosensitive resin layer formed from the photosensitive resin composition according to any one of the above [1] to [6]. [8] A photoresist roll which is formed into a roll shape as the photosensitive resin laminate described in the above m. f ϋ [9] A photoresist pattern fortunately > +, , ^ $ into a method's sequence includes: Photosensitivity as described in [8] above, and the sensitization of the layered body a step of laminating the resin layer on the substrate, and an exposure step of exposing the subtractive ground/secondary resin layer to a developing step of removing the photosensitive photosensitive resin layer. [10] The method for forming a photoresist pattern according to the above [9], wherein the exposure step is performed in a direct riding diagram (4), in the above [11], a printed circuit board, and a method for forming L, which further includes: (4) by reading the remaining lines of σ above [9] or [10]. Method (4) Forming a substrate with a photoresist pattern [12] Is the method of manufacturing a lead frame or the method described in Π0]? , including: by using the steps [9] above. The substrate having the first resist pattern is etched. [13] A semiconductor pattern is as described in the above [9] or [1G], which further includes the steps of performing button etching or mineral deposit. ^ Substrate in which a photoresist pattern is formed Π 4] - A film transistor is described in [9] or [10]. Wanfa, which includes:

干〜〜乃法而开J 7战有光阻圖案之基板進行蝕 139313.doc 201001066 刻或鍵敷之步,驟。 [15] 種感光性樹脂組合物,其係含有(a)鹼溶性酚樹 月曰(B) 3 1,2_奈醌二疊氮基之感光劑,以及(D)由選自雙 齡A雙齡E、雙驗F及雙齡s、以及將該等氯化而獲得之 化〇物所,且成之群中的至少一種化合物所衍生並且末端具 有至少1個羥基之化合物而成者。 [16] 如上述[15]所記載之感光性樹脂組合物,其中上述 (D)成分為選自以下述通式(νπ)所表示之化合物、以及對 其進行氫化所得之化合物所組成之群中的至少一種化合 物: [化2]Dry ~ ~ is the law to open the J 7 battle with the substrate of the photoresist pattern to etch 139313.doc 201001066 engraved or key step, step. [15] A photosensitive resin composition comprising (a) an alkali-soluble phenolic resin (B) 3 1,2-naphthyl diazide-based sensitizer, and (D) selected from the group consisting of two ages A Two-year-old E, double-test F, and two-year-old s, and a compound obtained by chlorination, and a compound obtained by at least one compound in the group and having at least one hydroxyl group at the terminal is used. [16] The photosensitive resin composition according to the above [15], wherein the component (D) is a group selected from the group consisting of a compound represented by the following formula (νπ) and a compound obtained by hydrogenating the same At least one compound: [Chemical 2]

(VII) {式中,Y】為伸乙某,V , 2為伸丙基’ Y3為碳數4〜6之伸烷 基’ Y4及丫5分別獨立為氫原子或者甲基,p' q及鸿〇以上 之整數,其合計為1〜2G,結構右邊及/或左邊所含有之氧 化伸乙基、氧化伸丙基、及碳數4〜6之氧化伸烧基之重複 單元可無規地加入,亦可作為嵌段而加入}。 間如上述[15]或[16]所記载之感光性樹脂組合物,立含 有20〜9〇質量%之上述⑷成分、h5質量%之上述(B)成 分,而且含有1〜75質量%之上述(D)成分。 [18]如上述[15]至[17]中任_ 物,其含有以下述通式⑴所表 項所記載之感光性樹脂組合 不之化合物之醌二疊氮磺酸 139313.doc -10- 201001066 酿作為上述(B)成分: [化3](VII) {wherein, Y] is a thief, V, 2 is a stretching propyl 'Y3 is a carbon number 4 to 6 alkylene group 'Y4 and 丫5 are each independently a hydrogen atom or a methyl group, p' q And the integers above and above, which are 1~2G in total, and the repeating unit of the oxidized stretch ethyl group, the oxidized stretch propyl group, and the carbon number 4~6 oxidized stretching group contained on the right side and/or the left side of the structure may be random. Adding ground can also be added as a block}. The photosensitive resin composition according to the above [15] or [16], which contains the above-mentioned component (4) and h5 mass% of the component (B) in an amount of 20 to 9 % by mass, and further contains 1 to 75% by mass. The above component (D). [18] The above-mentioned [15] to [17], which contains quinonediazidesulfonic acid 139313.doc -10- which is a compound which is not combined with the photosensitive resin described in the following formula (1) 201001066 Stuffed as the above (B) ingredient: [Chemical 3]

{式中,分別獨立A答 , 马風、鹵素、Cl〜C4之烷基、烯 基或經基’ R_7及Rs分別獨立主鸟 ^ J饲立為虱、鹵素或Cl〜C4之烷基, 而且R9〜Rll分別獨立為氫或C1〜C4之烷基卜 [19] 一種感光性樹脂積厗舻 積層體,其至少包含支持體、及由 如上述[15]至[18]中任―頂册+ , 」丁 1項所圮載之感光性樹脂組合物所 形成之感光性樹脂層。 [20] —種光阻捲筒,i係將如 八你將如上述Π9]所記載之感光性 樹脂積層體製成捲筒者。 叫-種光阻圖案之形成方法,其依序包括:將如上述 [19]所記載之感光性樹脂積層體的感光㈣脂層㈣μ 板上之積層步驟、對感光性樹脂層進行曝光之曝光步驟、 及將感光之感光性樹脂層去除之顯影步驟。 [22]如上述[21]所記載之光阻圖案之形成方法,其中於 上述曝光步驟中進行直接繪圖而曝光。 139313.doc • 11 - 201001066 [23]—種印刷電路板之製造方法, 對藉由 之基板 延而包括: 如上述[2 1 ]或[22]所記載之方法而形成 u战有光阻圖案 進行蝕刻或鍍敷之步驟。 〃 其包括:對藉由如上述 光阻圖案之基板進行蝕 [24] —種導線架之製造方法, [2 1 ]或[22]所記載之方法而形成有 刻之步驟。 ,其包括:對藉由如上 有光阻圖案之基板進行 ,其包括:對藉由如上 有光阻圖案之基板進行 [25] 一種半導體圖案之製造方法 述[21]或[22]所記載之方法而形成 姓刻或鍵敷之步驟。 [26] —種薄膜電晶體之製造方法 述[21]或[22]所記載之方法而形成 蝕刻或錢敷之步驟。 [發明之效果] 根據本發明,可提供-種能夠形成圖案、以乾膜方& 成時感光性樹脂組合物較為柔軟、即使對該膜進行切室亦 可充分抑制切屬之產生之感光性樹脂組合物。 【實施方式】 以下’就本發明加以詳細說明。 (A)驗溶性紛樹脂 ⑷驗溶性紛樹脂例如係將紛化合物、與越及/或_作為 原料並藉由縮聚反應而獲得。 ’ 作為上述齡化合物,例如可舉出H甲紛、二甲笨 齡;乙基苯齡、丁基苯盼、1甲基苯料之烧基驗;甲氧 基苯酉分、2-甲氧基甲基苯齡等之烧氧基苯紛;乙缔基苯 139313.doc -12- 201001066 盼、烯丙基苯紛等之稀基苯齡;苯基苯齡等之芳基苯齡; ¥基_等之芳炫基苯盼;甲氧基絲苯紛等之炫氧基幾 基苯紛;I甲醯氧基笨齡等之芳基㈣苯紛;氯苯紛等之 鹵化苯酚’鄰苯一酚、間苯二酚等之多羥基苯;雙酚A、 雙紛F等之雙紛;以及α,_萘料之萘盼化合物;對經 基本基-2-乙醇、對羥基苯基_3_丙醇、對羥基苯基_4_ 丁醇 等之經基⑨基苯盼;Μ基乙基甲紛等之經基烧基甲酚;雙 酚之單環氧乙烷加成物、雙酚之單環氧丙烷加成物等之含 有醇性羥基之苯酚化合物;以及對羥基苯基乙酸、對羥基 苯基丙鲅、對羥基苯基丁酸、對羥基肉桂酸、羥基苯甲 酸、羥基苯基苯曱酸、羥基苯氧基笨甲酸、雙酚酸等之含 有羧基之苯酚化合物等。 上述苯酚化合物可單獨使用丨種或者將2種以上組合使 用。 作為上述醛及/或酮,例如可舉出:甲醛、乙醛、糠 醛、苯甲醛、羥基苯曱⑮、曱氧基苯曱醛、羥基苯乙醛、 甲氧基苯乙醛、巴豆醛、氣乙醛、氣苯乙醛 '丙酮及甘油 醛。又,作為醛及/或酮,例如亦可舉出:乙醛酸、乙醛 酸曱酯、乙醛酸苯酯、乙醛酸羥基笨酯、甲醯乙酸、曱醯 乙酸甲酯、2-曱醯丙酸、2-甲醯丙酸曱酯、丙酮酸、乙醯 丙酸、4-乙醯丁酸、丙酮二曱酸、及3,3,,4,4,_二笨曱酮四 甲酸。又,亦可使用多聚甲醛、三噚烷等之曱醛前驅物。 該等可單獨使用1種或者將2種以上組合使用。 較好的是於上述縮聚反應中使用酸性觸媒。藉由使用該 139313.doc -13 - 201001066 酸性觸媒,而容易獲得盼酿清漆型紛樹脂,可更有效地防 止切屑之產生。作為該酸性觸媒,例如可趟 酸、甲酸、乙酸、對甲苯績酸及草酸。酸性觸媒^賤 用1種或者將2種以上組合使用。再者,驗溶㈣樹脂之合 成條件亦可為公知之條件。 用以獲得鹼溶性酚樹脂的原料中之醛及/或酮之含量較 好的是相對於上述苯酚化合物丨莫耳而為θ '〗莫耳。於此 情形時,可使上述縮聚反應更迅速地進行。 又,(A)鹼溶性酚樹脂亦可為上述酚化合物與間二甲苯 之類的苯酚以外的化合物之縮聚產物。於此情形時缩聚 時所使用之苯紛以外的化合物相對於紛化合物之· 好的是未達0.5。 、 Ζ 對於(Α)驗溶性酴樹脂之利用凝膠渗透層析法所得之聚 苯乙烯換算重量平均分子量,就提高塗膜性之觀點以及抑 制顯影性下降之觀點而言,較好的是3〇〇〜1〇〇,_,進而 較好的是丨卿〜冰綱。重量平均分子量就塗膜性之觀點 而言較好的是3 00以上。又,秣骷旦,以 t 上又就顯影性之觀點而言較好的 是100,000以下。 又’於上述紛樹脂之重量平均分子量較小之情形時,亦 可使用鏈伸長劑進行盼樹脂之多聚體化,使分子量增大以 達到上述重量平均分早I e , 里十0刀子里之軌圍。作為鍵伸長劑,例如可 牛出·能夠與m基反應之二環氧化合物或4㈣化人 物、以及能夠與經基反應之二異氰酸3旨化合物。 σ ⑷驗溶性酴樹脂可單獨使用Μ重或者將2種以上植 I393i3.doc •】4- 201001066 用。作為將2種以上組合使用之情形時之鹼溶性酚樹脂, 例如可舉出:由種類互不相同之單體所獲得之2種以上之 驗溶性酚樹脂、具有互不相同的重量平均分子量之2種以 上之鹼溶性酚樹脂、以及具有互不相同的分散度之2種以 上之鹼溶性酚樹脂。 (A)驗溶性酚樹脂於感光性樹脂組合物中之調配比例較 好的是相對於感光性樹脂組合物全體之量為20〜90質量{In the formula, respectively, independent A answer, horse wind, halogen, Cl~C4 alkyl, alkenyl or via the base 'R_7 and Rs respectively independent main bird ^ J is established as a halogen, halogen or Cl~C4 alkyl, Further, R9 to R11 are each independently hydrogen or an alkyl group of C1 to C4. [19] A photosensitive resin accumulation layer body comprising at least a support, and by any of the above [15] to [18] A photosensitive resin layer formed of the photosensitive resin composition contained in the item "1". [20] A resistive reel, i, which will be a reel of a photosensitive resin laminate as described in the above-mentioned Π9]. A method for forming a photoresist pattern, which comprises the steps of laminating a photosensitive (four) lipid layer (four) on a photosensitive resin layered body as described in the above [19], and exposing the photosensitive resin layer to exposure. And a developing step of removing the photosensitive photosensitive resin layer. [22] The method for forming a photoresist pattern according to [21] above, wherein the direct exposure is performed in the exposure step. 139313.doc • 11 - 201001066 [23] A method of manufacturing a printed circuit board, comprising: forming a u-war resist pattern by the method described in [2 1 ] or [22] above; The step of etching or plating is performed. 〃 It comprises: forming an inscribed step by etching the substrate of the photoresist pattern as described in [24], a method for manufacturing a lead frame, and the method described in [2 1 ] or [22]. And comprising: performing a substrate having a photoresist pattern as described above, comprising: performing the method of manufacturing a semiconductor pattern by the substrate having the photoresist pattern as described above [25] or [22] The method forms a step of surname or key placement. [26] A method of producing a thin film transistor, which comprises the steps described in [21] or [22] to form an etching or a money coating. [Effect of the Invention] According to the present invention, it is possible to provide a pattern capable of forming a pattern, and the photosensitive resin composition is relatively soft when the film is dry and the film is formed, and even if the film is diced, the sensitization of the genus can be sufficiently suppressed. Resin composition. [Embodiment] The present invention will be described in detail below. (A) Solubility-resolving resin (4) The solvent-soluble resin is obtained, for example, by a polycondensation reaction using a compound, a mixture of acetonide and/or _ as a raw material. 'As the compound of the above-mentioned age, for example, H-methyl, dimethyl-brown; ethyl benzoate, butyl benzene, 1-methylbenzene burning test; methoxybenzoquinone, 2-methoxy Alkylbenzene, etc.; acetophenone benzene 139313.doc -12- 201001066 Hope, allyl benzene, etc., phenyl group age; phenyl benzene age, etc. aryl benzene age; ¥ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Polyhydroxybenzene such as benzene phenol, resorcinol, bisphenol A, bisphenol F, etc.; and naphthene compound of α, _ naphthalene; base to 2-ethanol, p-hydroxyphenyl _3_propanol, p-hydroxyphenyl-4-butanol, etc., 9-based benzophenone; mercaptoethyl ketone, etc.; bisphenol monoethylene oxide adduct, a phenol compound containing an alcoholic hydroxyl group such as a monopropylene oxide adduct of bisphenol; and p-hydroxyphenylacetic acid, p-hydroxyphenylpropionamidine, p-hydroxyphenylbutyric acid, p-hydroxycinnamic acid, hydroxybenzoic acid, Hydroxyphenyl benzoic acid, Phenoxy stupid acid, bis acid-containing phenol compound, etc. carboxyl and the like. These phenol compounds may be used singly or in combination of two or more. Examples of the aldehyde and/or ketone include formaldehyde, acetaldehyde, furfural, benzaldehyde, hydroxyphenylhydrazine 15, decyloxybenzaldehyde, hydroxyphenylacetaldehyde, methoxyphenylacetaldehyde, and crotonaldehyde. Gas acetaldehyde, gas phenylacetaldehyde 'acetone and glyceraldehyde. Further, examples of the aldehyde and/or ketone include glyoxylic acid, decyl glyoxylate, phenyl glyoxylate, hydroxy ester of glyoxylic acid, formazanic acid, methyl hydrazine acetate, and 2- Propionic acid, decyl 2-methylpropionate, pyruvic acid, acetopropionic acid, 4-ethyl phthalic acid, acetone dicarboxylic acid, and 3,3,,4,4, dioxin Formic acid. Further, a furfural precursor such as paraformaldehyde or trioxane may also be used. These may be used alone or in combination of two or more. It is preferred to use an acidic catalyst in the above polycondensation reaction. By using the 139313.doc -13 - 201001066 acid catalyst, it is easy to obtain a varnish-type resin, which can more effectively prevent the generation of chips. As the acidic catalyst, for example, citric acid, formic acid, acetic acid, p-toluene acid, and oxalic acid are used. The acidic catalysts may be used alone or in combination of two or more. Further, the conditions for synthesizing the (tetra) resin may be known conditions. The content of the aldehyde and/or ketone in the raw material for obtaining the alkali-soluble phenol resin is preferably θ' with respect to the above phenol compound. In this case, the above polycondensation reaction can be carried out more rapidly. Further, the (A) alkali-soluble phenol resin may be a polycondensation product of a compound other than phenol such as the above phenol compound and m-xylene. In this case, the compound other than the benzene used in the polycondensation is preferably less than 0.5 with respect to the compound. Ζ Ζ 验 验 验 之 之 之 之 之 之 之 之 之 之 之 之 之 之 凝胶 凝胶 凝胶 凝胶 凝胶 凝胶 凝胶 凝胶 凝胶 凝胶 凝胶 凝胶 凝胶 凝胶 凝胶 凝胶 凝胶 凝胶 凝胶 凝胶 凝胶 凝胶 凝胶 凝胶 凝胶 凝胶 凝胶 凝胶〇〇~1〇〇, _, and then better is 丨卿~冰纲. The weight average molecular weight is preferably 300 or more from the viewpoint of film coating properties. Further, it is preferably 100,000 or less from the viewpoint of developability on t. In addition, when the weight average molecular weight of the above resin is small, the chain extender can also be used to carry out the polymerization of the resin, so that the molecular weight is increased to achieve the above-mentioned weight average score of Ie, in the 10 knives. The track circumference. As the bond extender, for example, a diepoxide compound or a 4 (tetra) compound which can react with an m group, and a diisocyanate 3 compound which can react with a warp group can be used. σ (4) Detective decyl resin can be used alone or more than 2 kinds of plants I393i3.doc •] 4- 201001066. The alkali-soluble phenol resin in the case where two or more types are used in combination, for example, two or more kinds of test phenol resins obtained from monomers having different types of different types, and having different weight average molecular weights Two or more kinds of alkali-soluble phenol resins and two or more alkali-soluble phenol resins having different degrees of dispersion from each other. (A) The proportion of the test phenol resin in the photosensitive resin composition is preferably from 20 to 90% by mass based on the total amount of the photosensitive resin composition.

%,進而較好的是25〜85質量。Λ,尤其好的是3〇〜8〇質量 %。該調配比例就提高圖案形成性之觀點而言較好的是 貝I /〇以上,又,就防止光阻膜較脆之觀點而言較好的是 9 0質量。/。以下。 (Β)含1,2-萘醌二疊氮基之感光劑 (Β)含1,2-萘醌二疊氮基之感光劑係使具有磺基及/或磺 酿氯基之1,2—萘g昆二疊氮化合物與具有經基或胺基之有機 口物(以下簡稱為「有機化合物」)反應而獲得之化合 物此時,有機化合物之羥基或胺基與〗,2_醌二疊氮化合 物之磺基或磺醯氯基鍵結。再者,該鍵只要於所得 二疊氮化合物之分子内為至少一個即可。 作為上述具有磺基及/或磺醯氯基之1,2·醌二疊氮化合 一足例如可舉出.i,2_萘酿二疊氮_心績酸、蔡醌j 二疊氮-5-磺酸、U-萘醌_2_二疊氮_4_磺醯氣、及"芡 酿I二疊氮〜黃酸氯。上述具有續基及/或續醯氣基: 以:二4氮化合物中,較好的是選自萘…疊氮_ 4-½酸、1,2_萘酿_2·二疊氮續酸、1,2_萘酿_2_二疊氮·4· 139313.doc •15· 201001066 石兴1吼、及1,2-萘酿_2_二疊氮_5•續醯氯所組成之群中之1 ^以上之化合物。該等具有石黃基及/或磺酿氯基之m昆二 豐氮化合物充分地溶解於溶劑中,故可提高與有機化 之反應效率。 σ 作為上述有機化合物,例如可舉出:多羥基二苯甲酮 類、雙[(多)經基苯基]烧烴類、三(經基苯基)甲燒類或其甲 基取代物、雙(環己基經基苯基)(經基苯基)甲烧類或其甲 基取:物、苯酚、對甲氧基苯酚、二甲基苯酚、對苯二 酚奈紛、鄰苯二盼、鄰苯三龄、鄰苯三驗單甲_、鄰苯 二酚-1,3_二甲醚、沒食子酸、苯胺、對胺基二苯基胺、 ^二胺基二苯甲酮、㈣、鄰苯三齡-丙酮樹脂、經基 苯乙烯之均聚物或者和可與其共聚合之單體所形成之共= 物°亥等可單獨使用1種或者將2種以上組合使用。 作為上述多經基二苯甲g同類,例如可舉出 基二苯甲嗣、…經基二苯甲嗣 酮、2,3,6-三羥基二苯甲酮、2,3,4_三羥基甲基二〜 酉同、2,3,4,4|-四羥基二苯曱酮、2,2,,4,4,·四羥基二= 酮、2,3’,4,4’,6_五羥基二苯甲酮、2,2,,3,4,4、五羥基 酮、2,2’,3,4,5_五經基:苯f _、may·六經基 :酮、及2,3,3’,4,4,,5,.六經基二苯甲_。該等可單獨使用1 種或者將2種以上組合使用。 作為雙[(多)經基笨基]烧煙類,例如可舉出. 經基苯基)甲燒、雙(2,3,4_三經基笨基)甲燒、2·二,二 基)-2-(4|_經基笨基)丙烧、2_(24_二經基笨基二 139313.doc -16- 201001066 羥基苯基)丙烷、2-(2,3,4-三羥基苯基)-2-(2’,3',4'-三羥基苯 基)丙烷、4,4'-{1-[4-[2-(4-羥基苯基)-2-丙基]苯基]亞乙基} 雙酚、及3,3’-二曱基-{1-[4-[2-(3-曱基-4-羥基苯基)-2_丙 基]苯基]亞乙基}雙酚。該等可單獨使用1種或者將2種以上 組合使用。 作為三(羥基苯基)曱烷類或其曱基取代物,例如可舉 出:三(4-羥基苯基)甲烷、雙(4-羥基-3,5-二曱基苯基)_4_ / 羥基苯基甲烷、雙(4-羥基-2,5-二甲基苯基)-4-羥基苯基曱 4 烷、雙(4-羥基-3,5-二甲基苯基)-2-羥基苯基曱烷、雙(4_經 基_2,5 - 一甲基苯基)-2 -經基苯基甲烧、雙(4 -經基-2,5 -二曱 基笨基)·3,4·二羥基苯基甲烷、及雙(4-羥基-3,5-二甲基苯 基)-3,4-二羥基苯基甲烷。該等可單獨使用1種或者將2種 以上組合使用。 作為雙(環己基羥基苯基)(羥基苯基)甲烷類或其甲基取 代物,例如可舉出:雙(3_環己基_4_羥基苯基)_3_羥基苯基 ij 甲炫·雙(3-環己基-4-經基苯基)-2-經基苯基甲烧、雙(3_ 環己基-4-羥基苯基)_4_羥基苯基曱烷、雙(5_環己基羥 基_2-甲基笨基)-2-羥基苯基甲烷、雙(5_環己基_4_羥基_2_ 甲基笨基)·3-羥基苯基甲烷、雙(5-環己基-4-羥基-2-曱基 苯基)_4_羥基苯基甲烷、雙(3-環己基-2-羥基苯基)_3_羥基 苯基曱烷、雙(5-環己基-4-羥基-3-曱基苯基)-4-羥基苯基 甲烷、雙(5-環己基_4_羥基_3_甲基苯基)_3_羥基苯基甲 烷、雙(5-環己基_4_羥基_3_曱基笨基)_2_羥基苯基甲烷、 又(3裏己基-2-备基苯基)_4_經基苯基甲烧、雙(3_環己基_ 139313.doc -17- 201001066 2-羥基苯基)-2-羥基苯基甲烷、雙(5_環己基_2_羥基_4_甲基 苯基)-2-羥基苯基甲烷、及雙(5_環己基_2_羥基_4_甲基苯 基)-4-羥基苯基甲烷。該等可單獨使用丨種或者將2種以上 組合使用。 該等之中,作為上述有機化合物,較好的是多羥基二苯 甲酮颂雙[(多)备基苯基]烧烴類、三(經基苯基)甲烧類、 及/或雙(環己基羥基苯基)(羥基苯基)甲烷類。上述有機化 合物進而較好的是選自以下述通式⑴、(π)及(πι)所表示 之化合物所組成之群中的至少—種化合物。於此情形時, 對感光性樹脂組合物照射光前與照射光後之相對於顯影液 的溶解度差變大’ m此存在圖像對比度更優異之優點。 其中’就感度之觀點而言,更好的是選自以下述通式⑴ 所表示之化合物、以下述通式(„)所表示之化合物及以下 述通式_所表示之化合物所組成之群中之至少_種化合 物: [化4]%, and further preferably 25 to 85 mass. Oh, especially good is 3〇~8〇 quality %. The blending ratio is preferably from the viewpoint of improving the pattern formability, and is preferably 90 Å or more in terms of preventing the photoresist film from being brittle. /. the following. (Β) A sensitizer containing 1,2-naphthoquinonediazide group (Β) containing 1,2-naphthoquinonediazide group is a sensitizer having a sulfo group and/or a sulfochlorinated group. a compound obtained by reacting a naphthoquinone diazide compound with an organic or organic group having a trans group or an amine group (hereinafter referred to as "organic compound"). At this time, the hydroxyl group or the amine group of the organic compound is 〗 〖 Sulfo or sulfonium chloride linkage of the azide compound. Further, the bond may be at least one in the molecule of the obtained diazide compound. Examples of the above-mentioned 1,2·quinonediazide compound having a sulfo group and/or a sulfonium chloride group include, for example, .i, 2—naphthalene diazide_heart acid, Cai Yi j-halide-5 - sulfonic acid, U-naphthoquinone_2_diazide_4_sulfonate, and " brewing I diazide to xanyl chloride. The above has a contiguous group and/or a hydrazine group: wherein: the bis-nitrogen compound is preferably selected from the group consisting of naphthalene, azide _ 4-1⁄2 acid, 1,2 _ naphthene, and diazide. 1,1_naphthalene-branches_2_diazepine·4· 139313.doc •15· 201001066 Shixing 1吼, and 1,2-naphthalene_2_diazide_5•continued chlorine 1 ^ or more of the compounds in the group. These m-enriched nitrogen compounds having a schistosyl group and/or a sulfonated chlorine group are sufficiently dissolved in a solvent, so that the reaction efficiency with organication can be improved. σ As the organic compound, for example, polyhydroxybenzophenones, bis[(poly)p-phenylene]hydrocarbons, tris(p-phenylphenyl)methanes or methyl substituents thereof, Bis(cyclohexylphenyl)phenyl (p-phenyl)methane or its methyl group: phenol, p-methoxyphenol, dimethylphenol, hydroquinone, phthalate , o-benzene three-year-old, o-benzene trimethoate _, catechol-1,3-dimethyl ether, gallic acid, aniline, p-aminodiphenylamine, diaminobenzophenone And (4), orthophthalic acid-acetone resin, a homopolymer of styrene-based styrene or a monomer which can be copolymerized with the monomer, or the like, may be used singly or in combination of two or more. Examples of the above-mentioned poly-based benzophenone g include, for example, bisbenzoquinone, benzoic benzophenone, 2,3,6-trihydroxybenzophenone, and 2,3,4_3. Hydroxymethyl bis- bis, 2,3,4,4|-tetrahydroxydibenzophenone, 2,2,,4,4,·tetrahydroxy bis-ketone, 2,3',4,4', 6_pentahydroxybenzophenone, 2,2,3,4,4,pentahydroxyketone, 2,2',3,4,5_pentane group: benzene f _, may·hexanyl group: ketone, And 2,3,3',4,4,,5,. hexa- benzophene _. These may be used alone or in combination of two or more. Examples of the bis ((poly) phenyl group) include, for example, phenyl phenyl), bis (2, 3, 4 _ trisyl), sb. Base)-2-(4|_ 经基基基)propane, 2_(24_二经基基基二139313.doc -16- 201001066 hydroxyphenyl)propane, 2-(2,3,4-tri Hydroxyphenyl)-2-(2',3',4'-trihydroxyphenyl)propane, 4,4'-{1-[4-[2-(4-hydroxyphenyl)-2-propyl Phenyl]ethylene}bisphenol, and 3,3'-dimercapto-{1-[4-[2-(3-mercapto-4-hydroxyphenyl)-2-propyl]phenyl ]Ethylene}bisphenol. These may be used alone or in combination of two or more. Examples of the tris(hydroxyphenyl)decane or its mercapto substituent include tris(4-hydroxyphenyl)methane and bis(4-hydroxy-3,5-dimercaptophenyl)_4_ / Hydroxyphenylmethane, bis(4-hydroxy-2,5-dimethylphenyl)-4-hydroxyphenylindane, bis(4-hydroxy-3,5-dimethylphenyl)-2- Hydroxyphenyl decane, bis(4-cysyl 2,5-monomethylphenyl)-2-p-phenylene, bis(4-trans-yl-2,5-dimercapto) 3,4·dihydroxyphenylmethane, and bis(4-hydroxy-3,5-dimethylphenyl)-3,4-dihydroxyphenylmethane. These may be used alone or in combination of two or more. Examples of the bis(cyclohexylhydroxyphenyl)(hydroxyphenyl)methane or a methyl substituent thereof include bis(3-cyclohexyl-4-hydroxyphenyl)_3-hydroxyphenyl ij 甲· Bis(3-cyclohexyl-4-ylphenyl)-2-phenylphenyl, bis(3-cyclohexyl-4-hydroxyphenyl)-4-hydroxyphenyl decane, bis(5-cyclohexyl) Hydroxy-2-methylphenyl)-2-hydroxyphenylmethane, bis(5-cyclohexyl-4-hydroxy-2-methylphenyl)-3-hydroxyphenylmethane, bis(5-cyclohexyl-4 -hydroxy-2-indolylphenyl)_4-hydroxyphenylmethane, bis(3-cyclohexyl-2-hydroxyphenyl)-3-hydroxyphenyldecane, bis(5-cyclohexyl-4-hydroxy-3) -nonylphenyl)-4-hydroxyphenylmethane, bis(5-cyclohexyl_4-hydroxy-3-methylphenyl)_3_hydroxyphenylmethane, bis(5-cyclohexyl_4_hydroxyl_ 3_曱基笨基)_2_hydroxyphenylmethane, (3 hexyl-2-butylidenephenyl)_4_p-phenylene, bis (3-cyclohexyl) 139313.doc -17- 201001066 2-hydroxyphenyl)-2-hydroxyphenylmethane, bis(5-cyclohexyl-2-hydroxyl-4-methylphenyl)-2-hydroxyphenylmethane, and bis(5-cyclohexyl_2_ hydroxyl _4_ methylphenyl) -4-hydroxyphenyl methane. These may be used alone or in combination of two or more. Among these, as the above organic compound, polyhydroxybenzophenone bis-[(poly)predomylphenyl]hydrocarbon, tris(phenylphenyl)methane, and/or double are preferred. (Cyclohexylhydroxyphenyl) (hydroxyphenyl)methane. Further, the above organic compound is preferably at least one compound selected from the group consisting of compounds represented by the following general formulae (1), (π) and (πι). In this case, the difference in solubility of the photosensitive resin composition with respect to the developer before and after the irradiation of the light becomes large, and there is an advantage that the image contrast is further excellent. Among them, from the viewpoint of sensitivity, a group selected from the group consisting of a compound represented by the following formula (1), a compound represented by the following formula („), and a compound represented by the following formula _ is more preferable. At least _ kinds of compounds: [Chemical 4]

139313.doc 18- 201001066 {式中’ R!〜R6分別獨 司立為虱、鹵素、C1-C4之烷基、烯 基或羥基,汉7及R8分s丨丨1 另i獨立為氫、鹵素或Ci〜C4之烷基, 而且R9〜Rl 1分別獨立為氕+ 馮虱或C1〜C4之烷基}; [化5]139313.doc 18- 201001066 {wherein R!~R6 are independently 虱, halogen, C1-C4 alkyl, alkenyl or hydroxyl, Han 7 and R8 are s丨丨1 and i is independently hydrogen, Halogen or a C to C4 alkyl group, and R9 to Rl 1 are each independently 氕+von or C1 to C4 alkyl};

(II) 之 {式中12 R15刀別獨立為氫原子、經取代或未經取代 碳數1〜5之烷基、或者經取代或未經取代之碳數卜5之烷氧 基}; [化6] III)(II) wherein R 15 is independently a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, or a substituted or unsubstituted carbon number 5 alkoxy group; 6] III)

iJ {式中,R16〜R19分別獨立為 ^ 1 ^ 虱原子、經取代或未經取代之 屄數1〜5之烧基、或者經取 ^ ^ 〇 ν ^ οα 代次未經取代之碳數1〜5之烷氧 基,而且X為早鍵、氧原子或伸笨基 於有機化合物為選自以上 ·" H、+.上述通式(I)所表示之化合物、以 上述通式(II)所表示之化合 ,^ 、 上述通式(III)所表示之 化&物所組成之群中的至少— 種化合物之情形時,具有磺 139313.doc -19· 201001066 基及/或項醯氣基之1,2-酿二疊氮化合物較好的是1,2_萘酉昆_ 2-二疊氮-4-磺酸、1,2-萘醌-2-二疊氮-5-磺酸、1,2_萘酿 二疊氮-4-磺醯氯、及/或丨,2-萘醌-2-二疊氮-5-磺醯氯。該 等具有磺基及/或磺醯氣基之1,2-醌二疊氮化合物與選自以 上述通式(I)所表示之化合物、以上述通式(π)所表示之化 合物及以上述通式(111)所表示之化合物所組成之群中的至 少一種化合物之相容性良好,故可減少將(Α)成分與⑺)成 分混合時所產生之凝聚物的產生量。又,若將包含該等之 感光性樹脂組合物用作光阻之感光性成分,則感度、圖像 對比度及耐熱性更為優異。 又,選自In the formula iJ, R16 to R19 are each independently a ^ 1 ^ fluorene atom, a substituted or unsubstituted oxime number 1 to 5, or a substituted ^ ^ 〇 ν ^ ο α sub-substituted carbon number An alkoxy group of 1 to 5, and X is an early bond, an oxygen atom or an extension based on an organic compound selected from the group consisting of the above formula (H), a compound represented by the above formula (I), and the above formula (II) And the compound represented by the above formula (III), in the case of at least one of the group consisting of the chemical compound and the substance, has a sulfo 139313.doc -19· 201001066 base and/or an item The gas-based 1,2-branched diazide compound is preferably 1,2-naphthoquinone-2-didiazide-4-sulfonic acid, 1,2-naphthoquinone-2-diazide-5- Sulfonic acid, 1,2-naphthalene-diazide-4-sulfonyl chloride, and/or hydrazine, 2-naphthoquinone-2-diazide-5-sulfonyl chloride. The 1,2-quinonediazide compound having a sulfo group and/or a sulfonium group, and a compound selected from the above formula (I), a compound represented by the above formula (π), and Since at least one of the compounds consisting of the compound represented by the above formula (111) has good compatibility, the amount of aggregate generated when the (Α) component and the component (7)) are mixed can be reduced. In addition, when the photosensitive resin composition containing these is used as a photosensitive component of a photoresist, sensitivity, image contrast, and heat resistance are more excellent. Again, selected from

合物: [化7]Compound: [Chemistry 7]

[化8] 139313.doc 20- (V)201001066[Chem. 8] 139313.doc 20- (V)201001066

OHOH

[化9][Chemistry 9]

(VI) 於此情形時,存在光感度更優異之優點。其中尤其好的 是以下述通式(IV)所表示之化合物。 作為使用選自以上述通式(I)所表示之化合物、以上述通 式(II)所表示之化合物及以上述通式(III)所表示之化合物 所組成之群中的至少一種化合物之1,2-萘醌二疊氮化合物 之合成方法,可舉出下述方法。亦即例如可舉出:將選自 以上述通式(I)所表示之化合物、以上述通式(II)所表示之 化合物及以上述通式(III)所表示之化合物所組成之群中的 至少一種化合物、以及1,2-萘醌-2-二疊氮-磺醯氣添加至 二哼烷、THF之類的溶劑中,於三乙胺、三乙醇胺、鹼金 屬碳酸鹽或鹼金屬碳酸氫鹽等之鹼觸媒之存在下反應之方 法。此時,合成出選自以上述通式(I)所表示之化合物、以 上述通式(Π)所表示之化合物及以上述通式(III)所表示之 139313.doc -21 - 201001066 化合物所組成之群中之至少一種化合物的羥基與丨,2_萘醌-2-二疊氮-磺醯氣的磺醯基縮合而成之含丨,2_萘醌二疊氮基 之感光劑。再者,於所獲得之含丨,2_萘醌二疊氮基之感光 劑的分子内,選自以通式(I)、(11)及(111)所表示之化合物 所組成之群中之至少一種化合物的羥基與丨’2-萘醌二疊 氮-磺醯氯的磺醯基之鍵只要為至少一個即可。 再者,作為1,2-萘醌-2-二疊氮_磺醯氯,以丨,2_萘醌_2_二 疊氮-4-磺醯氯、或者丨,2_萘醌_2_二疊氮_5_磺醯氯為宜。 該等可單獨使用1種或者將2種以上組合使用。 (B)成刀於感光性樹脂組合物中之調配比例較好的是相 對於感光性樹脂組合物全體之量為卜75質量%,進而較好 :是5〜50質量%。尤其好的是5〜4〇質量%。進而尤其好的 疋10 30貝$ %。該調配比例就提高光感度之觀點而言較 好的疋1質量%以上’ & ’就防止光阻膜較脆之觀點而令 較好的是75質量%以下。 ⑹側鏈上具有源自芳香族經基化合物之基之餘溶性樹脂 作為(C)側鍵上具有源自芳香族羥基化合物之基之驗溶 性樹脂’例如可舉出:⑴聚録苯乙㈣樹脂、⑼含有 :基之4 (甲基)丙烯酸酯樹脂、(出)含有酚基之聚丙烯醯 胺樹脂及其等之改質體。 作為聚羥基苯乙烯系樹脂之製造方法,如下方法等作為 業上所知用之方法而為人所知:使藉由乙醯氧基苯基甲 之脫水、經基肉桂酸之脫幾分解、乙基笨紛之脫氫 等的各種方法所獲得之乙烯基苯盼單體,於陽離子或自由 139313.doc -22* 201001066(VI) In this case, there is an advantage that the light sensitivity is more excellent. Among them, particularly preferred are the compounds represented by the following formula (IV). 1 using at least one compound selected from the group consisting of a compound represented by the above formula (I), a compound represented by the above formula (II), and a compound represented by the above formula (III) The method for synthesizing the 2-naphthoquinonediazide compound includes the following method. In other words, for example, a group selected from the group consisting of the compound represented by the above formula (I), the compound represented by the above formula (II), and the compound represented by the above formula (III) At least one compound and 1,2-naphthoquinone-2-diazide-sulfonium gas are added to a solvent such as dioxane or THF in triethylamine, triethanolamine, alkali metal carbonate or alkali metal A method of reacting in the presence of a base catalyst such as hydrogencarbonate. In this case, a compound selected from the above formula (I), a compound represented by the above formula (Π), and a compound represented by the above formula (III) 139313.doc -21 - 201001066 are synthesized. A sensitizer containing ruthenium, a 2-naphthoquinonediazide group formed by condensation of a hydroxyl group of at least one compound of the composition group with a sulfonyl group of ruthenium, 2-naphthoquinone-2-diazide-sulfonate. Further, in the obtained bismuth-containing, 2_naphthoquinonediazide-based sensitizer, selected from the group consisting of compounds represented by the general formulae (I), (11) and (111) The hydroxy group of at least one compound and the sulfonyl group of 丨'2-naphthoquinonediazide-sulfonyl chloride may be at least one. Further, as 1,2-naphthoquinone-2-diazide-sulfonyl chloride, hydrazine, 2_naphthoquinone-2_diazide-4-sulfonyl chloride, or hydrazine, 2_naphthoquinone-2 _Diazide _5_ sulfonium chloride is preferred. These may be used alone or in combination of two or more. (B) The blending ratio in the photosensitive resin composition is preferably 75 mass%, more preferably 5 to 50 mass%, based on the total amount of the photosensitive resin composition. Particularly preferably, it is 5 to 4% by mass. And especially good 疋10 30 shells $%. The blending ratio is preferably 疋1% by mass or more from the viewpoint of improving the light sensitivity. The &> is preferably 75 mass% or less from the viewpoint of preventing the photoresist film from being brittle. (6) A residual-soluble resin having a group derived from an aromatic mercapto group-containing compound in a side chain as a solvent-soluble resin having a group derived from an aromatic hydroxy compound on a side bond (C), for example, (1) poly(phenylene) The resin (9) contains a base 4 (meth) acrylate resin, a phenol group-containing polypropylene amide resin, and the like. As a method for producing a polyhydroxystyrene-based resin, the following methods and the like are known as a method known in the art: dehydration by ethoxylated phenyl group, decomposition by cinnamic acid, Vinyl benzene monomer obtained by various methods such as ethyl dehydrogenation, in cation or free 139313.doc -22* 201001066

基起始劑之存在下進行單聚或者與其他共聚單體進行共聚 σ。又,亦已知有以下方法:合成以乙醯基、三甲基矽烷 基、第三丁基、第三丁氧基羰基等將乙烯基苯酚類之羥基 加以保護之單體,於陽離子、陰離子或自由基起始劑之存 在下進仃聚合,然後使保護基脫離而獲得聚合物。該方法 中,藉由選擇保護基之種類及起始劑之種類,亦可製造利 用所《月/舌性t合(living p〇lymerizati〇n)而得之單分散聚合 物(日本專利特開平3_2776〇8號公報)。進而已知有:對該 等乙烯基苯酚系聚合物進行氫化處理而製成透光性優異之 改貝體之方法(日本專利特開平卜丨们⑼々號公報)、或者利 用乙烯基笨m合物的經基之反應而製造各種轉及醋衍 生物之製造法(日本專利特開昭63 3123〇7號公報,纖維高 刀子材料研究所報告128卷、65頁(i98i年))以及乙烯基苯 酚系來合物之各種核取代物(日本專利特開昭5丨_83 69丨號公 報)之製造法。 作為⑴聚經基苯乙稀系樹脂,可舉出:聚經基苯乙稀, 改質聚羥基苯乙烯,氫化聚羥基笨乙烯,羥基苯乙烯與苯 乙烯、(甲基)丙烯酸酯、順丁烯二酸酯等之共聚物等。聚 备基苯乙烯之重置平均分子量為ιοοο〜(,剛,⑽,較好的 是 5,000~50,000。 作為改質聚羥基苯乙嬌,^•斑 + G碑,可舉出:於鹼性觸媒之存在 下,使例如苯項醯氯衍生物、装# 丁生物奈%醯虱衍生物、苯曱醯氯 衍生物、萘甲酸氯衍生物笙ώ 王物寺與聚羥基苯乙烯反應而成者 等。 139313.doc •23· 201001066 作為上述磺醯氯衍生物或甲醯氯衍生物之具體例,可舉 出.對乙醯胺基苯磺醯氯、苯磺醯氯、對氯笨磺醯氯、萃 基苯磺醯氯、對乙醯胺基苯氣化羰基、苯甲醯氯、對氯苯 甲醯氯、萘基苯甲醢氯等。於此情形時,相對於聚羥基苯 乙烯1〇0重量份,通常係以10〜30重量份、較好的是15〜25 重量份之比例來使用上述續醯氯衍生物或上述甲醯氯衍生 物。此種改質聚羥基苯乙烯之重量平均分子量為 3,000〜50,000,較好的是5 〇〇〇〜3〇 〇〇〇之範圍。 風化聚經基笨乙烯係將聚經基苯乙烯以及藉由取代基至 一部分苯環進行了改質之改質聚羥基苯乙烯的笨環之二名 分加以氫化者。氫化聚羥基苯乙烯之重量平均分子量通々 係於3,000〜30,000、較好的是5,〇〇〇〜25 〇〇〇之範圍内g 擇。重量平均分子量就機械物性或耐乾式蝕刻性之觀點β 言較好的是3,000以上,就相容性之觀點而言較好的^ 30,000以下。 刀 關於與其他成分共聚合時之私其笑 ^ 吋之迕基本乙烯之比例,就曝光 時獲得充分之驗顯影性之翻赴而士 只王夂硯點而5,較好的是30質量%以 上、100質量。/。以下。進而較好Monomerization or copolymerization with other comonomers in the presence of a base initiator. Further, there is also known a method of synthesizing a monomer which protects a hydroxyl group of a vinyl phenol by an ethyl hydrazide group, a trimethyl decyl group, a tert-butyl group, a third butoxycarbonyl group, etc., in a cation, an anion The polymerization is carried out in the presence of a radical initiator, and then the protecting group is liberated to obtain a polymer. In this method, by selecting the kind of the protecting group and the kind of the initiator, it is also possible to manufacture a monodisperse polymer obtained by using the "living p〇lymerizati〇n" (Japanese Patent Special Kaiping) Bulletin No. 3_2776〇8). Further, a method of hydrolyzing the vinyl phenol-based polymer to obtain a modified hull having excellent light transmittance is known (Japanese Patent Laid-Open No. (9) nickname), or a vinyl stupid m A method for producing various kinds of vinegar derivatives by the reaction of the base of the compound (Japanese Patent Laid-Open No. 63 3123〇7, Fiber High Knife Materials Research Institute Report 128, page 65 (i98i)) and ethylene A method for producing various kinds of nuclear substitutes of a phenolic phenolic compound (Japanese Patent Laid-Open Publication No. SHO-63-69-A). Examples of the (1) polypyridyl styrene resin include: polypyridyl benzene, modified polyhydroxy styrene, hydrogenated polyhydroxy styrene, hydroxystyrene and styrene, (meth) acrylate, and cis. A copolymer such as a butylene diester or the like. The reset average molecular weight of the polystyrene styrene is ιοοο~ (, just, (10), preferably 5,000 to 50,000. As a modified polyhydroxybenzoic acid, ^• spot + G monument, it can be mentioned: alkaline In the presence of a catalyst, for example, a quinone chloro derivative, a butyl phthalocyanine derivative, a benzoquinone chloro derivative, a naphthoic acid chloro derivative, and a polyhydroxystyrene are reacted. 139313.doc •23· 201001066 Specific examples of the above-mentioned sulfonium chloride derivative or formazan chlorine derivative include acetaminophen benzene sulfonium chloride, benzene sulfonium chloride, and chloro chlorobenzene. Sulfonium chloride, benzyl sulfonium chloride, acetal benzene carbonylated carbonyl, benzamidine chloride, p-chlorobenzhydryl chloride, naphthyl benzamidine chloride, etc. In this case, relative to polyhydroxyl The above-mentioned hydrazine chloro derivative or the above-mentioned formazan chloro derivative is usually used in an amount of 10 to 30 parts by weight, preferably 15 to 25 parts by weight, based on 1 part by weight of the styrene. The weight average molecular weight of styrene is from 3,000 to 50,000, preferably from 5 〇〇〇 to 3 Å. Stupyl vinyl is a hydrogenated styrene and a two-part of the modified polyhydroxy styrene modified by a substituent to a part of the benzene ring. The weight average molecular weight of the hydrogenated polyhydroxystyrene is wanted. It is selected from the range of 3,000 to 30,000, preferably 5, 〇〇〇 to 25 。. The weight average molecular weight is preferably 3,000 or more in terms of mechanical properties or dry etching resistance. From the viewpoint of capacitiveness, it is better than 30,000. Knife is about the private laughter when it is copolymerized with other ingredients. The ratio of basic ethylene to 刀 吋 获得 获得 获得 获得 获得 获得 获得 获得 获得 获得 获得 获得 迕 迕 迕 迕 迕 迕 迕 迕 迕Point 5, preferably 30% by mass or more, 100% by weight or less. Further preferably

杈灯之&基本乙烯之比例為4C 質量°/。以上、100質量%以下。 作為(Π)含有齡基之聚(曱基)丙稀酸顆樹月旨,可舉出甲 基丙稀酸_4-經基苯酿、甲基丙稀酸-2♦經基苯基)乙酉旨等 含有龄基之聚(甲基)丙烯酸單體之聚合物、共聚物及盆改 質體。含㈣基之聚(甲基)丙烯酸醋樹脂之重量平均;子 量為5,000〜1,〇〇〇,_ ’較好的是1〇,_〜綱綱。 139313.doc -24- 201001066 又,作為(in)含有酚基之聚丙烯醯胺樹脂,可舉出: 3,5-一曱基_4_羥基苄基丙烯醯胺等含有酚基之丙烯醯胺單 :之聚口 4勿、共聚物及其改質體。含有酚基之聚丙烯醯胺 樹脂之重量平均分子量為1〇〇〇〜WOO’OOO,較好的是 5,000〜1〇〇,〇〇〇 0 (C)側鏈上具有源自芳香族羥基化合物之基之鹼溶性樹 脂的調配量較好的是相對於感光性樹脂組合物刚質量% 而為1〜75f量%。進而較好的是5〜50質量%。該調配比例 就防止光阻膜較脆之觀點而言較好的是丨質量%以上, 又就相對於系統全體的溶解性之觀點而言較好的是75質 量%以下。 (D)塑化劑 就可減v切屑之觀點而言,較好的是感光性樹脂組合物 中含有(D)塑化劑。 作為(D)塑化劑’只要係可相容之低分子量成分即可, 例如可舉出.聚乙二醇、聚丙二醇、聚氧丙烯聚氧乙烯 醚二聚氧乙烯單曱醚'聚氧丙烯單曱_、聚氧乙烯聚氧丙 稀單甲鱗t氧乙稀單乙®^、聚氧丙烯單乙、聚氧乙稀 二氧丙烯單乙醚專之一醇_酯類;鄰苯二甲酸二乙酯等之 鄰苯—甲I知類,鄰甲苯磺醯胺、對甲苯磺醯胺、檸檬酸 -曰扣檬S文二乙酯、乙酿檸檬酸三乙酯、乙醯檸檬酸 三正丙酯、乙醯檸檬酸三正丁酯等。 么對於感光性樹脂組合物中所含之(D)塑化劑而言,就於 ,准持優異之圖案形成性之狀態下可減少製成膜時的切屑之 1393I3.doc -25· 201001066 觀點而言,較好的是由選自雙酚A、雙酚E、雙酚F及雙酚 S、以及將該等氫化而獲得之化合物所組成之群中的至少 一種化合物所衍生’並且末端具有至少1個羥基之化合 物。 作為此種化合物,可舉出:利用雙酚A(2,2_雙(4,_羥基苯 基)丙烷)或雙酚E(l,l-雙(4_羥基苯基)乙烷)或雙酚ρ(4,4,-亞 甲基雙酚)或雙酚S(4,4,-磺醯基雙酚)之兩末端的羥基,導 入烷基、氧化伸烷基、或聚氧化伸烷基等脂肪族性分子鏈 之化合物。作為烷基,可舉出曱基、乙基、丙基等,作為 氧化伸烷基,可舉出氧化亞甲基、氧化伸乙基、氧化伸丙 基、氧化伸丁基等,作為聚氧化伸烷基,可舉出:聚氧化 亞甲基、聚氧化伸乙基、聚氧化伸丙基、聚氧化伸丁基或 者由其等之嵌段共聚物、無規共聚物所形成之基等。對於 (D)成分而言,以末端具有至少丨個羥基為前提,上述所導 入之分子鏈的末端亦可具有羥基以外之結構。 上述化合物中,就光阻膜的柔軟性之方面而言,較好的 疋由雙酚A或將其氫化之化合物所衍生之化合物。 進而,(D)成分進而較好的是選自以下述通式(Yu)所表The ratio of the basic ethylene of the xenon lamp is 4C mass ° /. Above 100% by mass. As a (Π) age-based poly(indenyl) acrylate acid tree, methacrylic acid _4-pyridyl benzene, methyl acrylate acid - 2 ♦ phenyl group) A polymer, a copolymer, and a potted modified body of an age-containing poly(meth)acrylic monomer. The weight of the (tetra)-containing poly(meth)acrylic acid vinegar resin is average; the amount is 5,000 to 1, and 〇〇〇, _ ' is preferably 1 〇, _~. 139313.doc -24- 201001066 Further, as the (in) polyacrylamide resin containing a phenol group, a phenol group-containing acrylonitrile such as 3,5-monodecyl-4-hydroxybenzyl acrylamide can be mentioned. Amine single: Polyether 4, copolymer and its modified body. The phenol group-containing polypropylene guanamine resin has a weight average molecular weight of 1 〇〇〇 to WOO'OOO, preferably 5,000 〜1 〇〇, and 〇〇〇0 (C) has an aromatic hydroxy compound derived from the side chain. The amount of the alkali-soluble resin to be blended is preferably from 1 to 75 % by mass based on the mass% of the photosensitive resin composition. Further preferably, it is 5 to 50% by mass. The blending ratio is preferably 丨% by mass or more from the viewpoint of preventing the photoresist film from being brittle, and is preferably 75 mass% or less from the viewpoint of solubility of the entire system. (D) Plasticizer It is preferred that the photosensitive resin composition contains (D) a plasticizer from the viewpoint of reducing v-cut. The (D) plasticizer' may be a compatible low molecular weight component, and examples thereof include polyethylene glycol, polypropylene glycol, and polyoxypropylene polyoxyethylene ether dioxyethylene monoterpene ether. Propylene monoterpene _, polyoxyethylene polyoxypropylene monomethyl scale t-oxyethylene single ethyl acetate ^, polyoxypropylene single ethyl, polyoxyethylene dioxypropylene monoethyl ether special alcohol _ esters; phthalic acid Ethyl formate such as o-benzoic acid, o-toluenesulfonamide, p-toluenesulfonamide, citric acid-sodium citrate, ethyl triethyl citrate, acetonitrile citrate Tri-n-propyl ester, tri-n-butyl citrate, and the like. The (D) plasticizer contained in the photosensitive resin composition can reduce the amount of chips at the time of film formation in the state of excellent pattern formation property. 1393I3.doc -25· 201001066 In general, it is preferably derived from at least one compound selected from the group consisting of bisphenol A, bisphenol E, bisphenol F, and bisphenol S, and a compound obtained by the hydrogenation, and has an end. A compound of at least one hydroxyl group. As such a compound, bisphenol A (2,2-bis(4,-hydroxyphenyl)propane) or bisphenol E (l,l-bis(4-hydroxyphenyl)ethane) or a hydroxyl group at both ends of bisphenol ρ (4,4,-methylene bisphenol) or bisphenol S (4,4,-sulfonyl bisphenol), introduced into an alkyl group, an alkylene oxide group, or a polyoxyalkylene A compound of an aliphatic molecular chain such as an alkyl group. Examples of the alkyl group include a mercapto group, an ethyl group, and a propyl group. Examples of the oxyalkylene group include an oxymethylene group, an oxidized ethyl group, an oxidized propyl group, an oxidized butyl group, and the like. Examples of the alkylene group include a polyoxymethylene group, a polyoxyalkylene group, a polyoxylated propyl group, a polyoxybutylene butyl group, or a block copolymer or a random copolymer formed therefrom. . The component (D) is premised on having at least one hydroxyl group at the terminal, and the terminal of the molecular chain introduced may have a structure other than a hydroxyl group. Among the above compounds, in terms of flexibility of the photoresist film, a compound derived from bisphenol A or a compound which hydrogenates it is preferred. Further, the component (D) is further preferably selected from the group consisting of the following formula (Yu).

不之化合4勿、及將其氫化之化合物所組成之群中的至,丨一 種化合物: Va compound of the group consisting of compounds that are not hydrogenated and hydrogenated, and a compound: V

[化 10][化10]

139313.doc -26· 201001066 {式中,Y!為伸乙基,Υ2為伸丙基,Υ3為碳數4〜6之伸烷 基’ Υ4及Υ5分別獨立為氫原子或者甲基,p、q及r為0以上 之整數,其合計為1〜20,結構右邊及/或左邊所含之氧化 伸乙基、氧化伸丙基、及碳數4〜6之氧化伸烷基之重複單 元可無規地加入’亦可作為嵌段而加入 上述通式(VII)中之右邊及/或左邊的p、q及r之合計為 1〜20,就不易產生膜切割時的切屑之方面而言為1以上, 就獲得良好的圖案形成性之方面而言為20以下。p、q及r 之合計較好的是1〜10,更好的是2以上、6以下。 又,就不易產生膜切割時的切屑之方面而言,較好的是 以上述通式(VII)所表示之化合物具有氧化伸丙基之重複單 元,特別好的是其右邊及/或左邊之q為1以上、10以下, 進而較好的是1以上、6以下。 對於上述通式(VII)之化合物之結構右邊及/或左邊所含 之氧化伸乙基、氧化伸丙基、及碳數4〜6之氧化伸烷基之 重複單元,只要該重複單元之合計為1〜20,則可無規地加 入,亦可作為彼段而加入。 作為以上述通式(VII)所表示之化合物之具體例,可舉 出:ADEKA NOL(註冊商標)SDX-1569、ADEKA NOL(註 冊商標)SDX-1570、ADEKA NOL(註冊商標)SDX-1571、 ADEKA NOL(註冊商標)SDX-479(以上為旭電化(股)製 造),NEWPOL BP-23P、NEWPOL(註冊商標)BP-3P、 NEWPOL(註冊商標)BP-5P、NEWPOL(註冊商標)BPE-20T、NEWPOL(註冊商標)BPE-60、NEWPOL(註冊商 139313.doc -27- 201001066 標)ΒΡΕ-100、NEWPOL(註冊商標)ΒΡΕ-180(以上為三洋化 成(股)製造),UNIOL(註冊商標)DB-400、UNIOL(註冊商 標)DAB-800、UNIOL(註冊商標)DA-350F、UNIOL(註冊商 標)DA-400、UNIOL(註冊商標)DA-700(以上為日油(股)製 造),BA-P4U GLYCOL、BA-P8 GLYCOL(以上為日本乳化 劑(股)製造)等。 感光性樹脂組合物中含有(D)成分之情形時之含量較好 的是相對於感光性樹脂組合物全體之量為1質量%以上、 7 5質量%以下。就確保光阻膜的柔軟性之方面而言較好的 是1質量%以上,就確保光阻膜的光感度之方面而言較好 的是7 5質量%以下。進而較好的是5質量%以上、6 0質量% 以下。更好的是1 〇質量%以上、5 0質量%以下。尤其好的 是20〜40質量%。 其他成分 於感光性樹脂組合物中,視需要亦能夠以改善塗佈性、 消泡性、平坦性等為目的而含有界面活性劑。該界面活性 劑並無特別限定,較好的是氟系界面活性劑。作為此種氟 系界面活性劑,例如可使用:BM-1000、BM-1100(以上為 BM Chemie 公司製造);MEGAFACE(註冊商標)F142D、 MEGAFACE(註冊商標)F172、MEGAFACE(註冊商 標)F173、MEGAFACE(註冊商標)F183、MEGAFACE(註冊 商標)R-08、MEGAFACE(註冊商標)R-30、MEGAFACE(註 冊商標)R-90PM-20、MEGAFACE(註冊商標)BL-20(以上為 大日本油墨化學工業公司製造);FLORARD FC-135、 139313.doc -28- 201001066 FLORARD FC-170C ' FLORARD FC-430 ' FLORARD FC-431、FLORARD FC-4430(以上為住友3M公司製造); Surflon(註冊商標)S-112、Surflon(註冊商標)S-113、 Surflon(註冊商標)S-131、Surflon(註冊商標)S-141、 Surflon(註冊商標)S-145(以上為旭硝子公司製造);8士 28PA、SH-190、SH-193、SZ-6032、SF-8428(以上為 Toray139313.doc -26· 201001066 {wherein, Y! is an ethyl group, Υ2 is a propyl group, and Υ3 is an alkyl group having a carbon number of 4 to 6', and Υ4 and Υ5 are each independently a hydrogen atom or a methyl group, p, q and r are integers of 0 or more, and the total is 1 to 20, and the repeating unit of the oxidized ethyl group, the oxidized propyl group, and the oxyalkylene group having a carbon number of 4 to 6 contained in the right side and/or the left side of the structure may be The total amount of p, q, and r added to the right side and/or the left side of the above formula (VII) can be added as a block, and the total amount of p, q, and r in the above formula (VII) is 1 to 20, which is less likely to cause chip cutting at the time of film cutting. When it is 1 or more, it is 20 or less in terms of obtaining favorable pattern formability. The total of p, q and r is preferably from 1 to 10, more preferably from 2 to 6, and not more than 6. Further, in terms of the chip which is less likely to cause film cutting, it is preferred that the compound represented by the above formula (VII) has a repeating unit of oxidized propyl group, and particularly preferably the right side and/or the left side thereof. q is 1 or more and 10 or less, and more preferably 1 or more and 6 or less. a repeating unit of the oxidized ethyl group, the oxidized propyl group, and the oxyalkylene group having a carbon number of 4 to 6 contained on the right and/or left side of the structure of the compound of the above formula (VII), as long as the total of the repeating units is If it is 1~20, it can be added randomly or as a part. Specific examples of the compound represented by the above formula (VII) include ADEKA NOL (registered trademark) SDX-1569, ADEKA NOL (registered trademark) SDX-1570, and ADEKA NOL (registered trademark) SDX-1571. ADEKA NOL (registered trademark) SDX-479 (above is manufactured by Asahi Kasei Co., Ltd.), NEWPOL BP-23P, NEWPOL (registered trademark) BP-3P, NEWPOL (registered trademark) BP-5P, NEWPOL (registered trademark) BPE- 20T, NEWPOL (registered trademark) BPE-60, NEWPOL (registrar 139313.doc -27- 201001066 standard) ΒΡΕ-100, NEWPOL (registered trademark) ΒΡΕ-180 (above is Sanyo Chemical Co., Ltd.), UNIOL (registered) Trademark) DB-400, UNIOL (registered trademark) DAB-800, UNIOL (registered trademark) DA-350F, UNIOL (registered trademark) DA-400, UNIOL (registered trademark) DA-700 (above manufactured by Nippon Oil Co., Ltd.) ), BA-P4U GLYCOL, BA-P8 GLYCOL (above, manufactured by Japan Emulsifier). In the case where the component (D) is contained in the photosensitive resin composition, the content is preferably 1% by mass or more and 7% by mass or less based on the total amount of the photosensitive resin composition. In terms of ensuring the flexibility of the photoresist film, it is preferably 1% by mass or more, and in terms of ensuring the light sensitivity of the photoresist film, it is preferably 75 mass% or less. Further, it is preferably 5% by mass or more and 60% by mass or less. More preferably, it is 1% by mass or more and 50% by mass or less. Especially good is 20 to 40% by mass. Other components The photosensitive resin composition may contain a surfactant for the purpose of improving coatability, defoaming property, flatness, etc., if necessary. The surfactant is not particularly limited, and a fluorine-based surfactant is preferred. As such a fluorine-based surfactant, for example, BM-1000, BM-1100 (above, BM Chemie); MEGAFACE (registered trademark) F142D, MEGAFACE (registered trademark) F172, MEGAFACE (registered trademark) F173, MEGAFACE (registered trademark) F183, MEGAFACE (registered trademark) R-08, MEGAFACE (registered trademark) R-30, MEGAFACE (registered trademark) R-90PM-20, MEGAFACE (registered trademark) BL-20 (above is Dainippon Ink) FLORARD FC-135, 139313.doc -28- 201001066 FLORARD FC-170C 'FLORARD FC-430' FLORARD FC-431, FLORARD FC-4430 (above Sumitomo 3M); Surflon (registered trademark) ) S-112, Surflon (registered trademark) S-113, Surflon (registered trademark) S-131, Surflon (registered trademark) S-141, Surflon (registered trademark) S-145 (above, manufactured by Asahi Glass Co., Ltd.); 28PA, SH-190, SH-193, SZ-6032, SF-8428 (above is Toray

Silicone公司製造)等之市售品。該等可單獨使用工種或者 將2種以上組合使用。 f、 界面活性劑之調配比例較好的是相對於感光性樹脂組合 物全體之量為5質量%以下。若該調配比例超過5質量%, 則有與調配比例處於上述範圍之情形相比較圖案形成性下 降之傾向。 感光性樹脂組合物中亦可含有接著助劑以提高與基材等 之接著性。作為該接著助劑,較好的是官能性矽烷偶合 劑。此處’所謂官能性矽烷偶合劑,意指具有羧基、曱基 ϋ 丙烯醯基、異氰酸酯基、環氧基等之反應性取代基之矽烷 偶合劑。作為官能性矽烷偶合劑,例如可舉出:三曱氧基 矽烷基苯曱酸、γ_甲基丙烯醯氧基丙基三甲氧基矽烷、乙 烯基三乙醯氧基矽烷、乙烯基三甲氧基矽烷、¥_縮水甘油 氧基丙基三甲氧基矽烷、三曱氧基矽烷基丙基異氰酸酯及 1,3,5-Ν-三(三曱氧基矽烷基丙基)異氰酸酯。該等可單獨使 用1種或者將2種以上組合使用。 上述接著助劑之調配比例較好的是相對於感光性樹脂組 合物全體之量為20質量%以下。若該調配比例超過2〇質量 139313.doc -29- 201001066 %,則有與調配比例處於上述範圍之情形相比較容易產生 顯影殘潰之傾向。 感光性樹脂組合物中亦可含有酸或高沸點溶劑以對相對 於鹼性顯影液之溶解性進行微調整。作為酸,例如可舉 出:乙酸、丙酸、正丁酸、異丁酸、正戊酸、異戊酸、苯 曱、肉桂酸專之單叛酸;乳酸、2 -輕基丁酸、3 -經基丁 酸、水楊酸' 間羥基苯甲酸、對羥基苯曱酸、2-羥基肉桂 酸、3-經基肉桂酸、4_羥基肉桂酸、5_羥基間苯二甲酸、 紫丁香酸等之羥基單羧酸;草酸、丁二酸、戊二酸、己二 η文、m ί烯二酸、衣康酸、六氫鄰苯二曱酸、鄰苯二 、間苯二曱酸、對笨二曱酸、1,2-環己烷二曱酸、1,2, P. '1^ -田 λ分 ^ 酸 ,&quot;人 利不一甲酸、1,2-環巳π二甲败、1,2 ί衣己院二甲酸、偏苯三曱酸、均苯四甲酸、環戊烷四 酸、丁烷四甲酸、1,2,5,8-萘四曱酸等之多元羧酸;衣 酸酐、丁二酸酐、檸康酸酐、十二烷基琥珀酸酐、三笨 甲酉义酐順丁烯二酸酐、六氫鄰苯二甲酸酐、甲基四裊 笨甲酉欠軒甲基雙環庚稀二曱酸酐、1,2,3,4- 丁烧四 酸、環戊烧四甲酿-紅 ^ Τ Θ夂—酐、鄰苯二曱酸酐、均本四甲驗 針、偏苯三甲酿36Χ 酐、一笨甲酮四曱酸二酐、乙二醇雙依 三曱酸酐酯、甘、、占一 /Α /二偏笨三曱酸酐酯等之酸針。又,0 高沸點溶劑,例‘ 1伽 可舉出:Ν-甲基曱醯胺、Ν,Ν-二甲J 醢胺、Ν-甲某ψ祕— *本胺、Ν-曱基乙醯胺、Ν,Ν-二曱基ζ 胺、Ν-曱基η比„各咕_ 疋酿I、二甲基亞砜、苄基乙基醚、二e 醚、丙酮基丙_、里 &quot;佛爾酮、己酸、辛酸、1 -辛醇、1 醇、苄醇、乙酿;^ 卞酉曰、笨曱酸乙酯、草酸二乙酯、順Ί 139313.doc -30· 201001066 二酸二乙酷、γ·丁内醋、碳酸乙二酿、碳酸丙二醋、乙酸 苯基溶纖劑等。該等可單獨使用i種或者將2種以上組合使 用。 上述酸或高沸點溶劑之調配比例可根據用$、塗佈方法 來調整,並且只要可均勻混合於感光性樹脂組合物中則無 f別限定。、例如’該等酸或高彿點溶劑之調配比例較好的 疋相對於感光性樹脂組合物總量為6〇質量%以下,進而較 =是4〇質量%以下。於此情形時,存在不會損及感光性 树月曰組合物的特性之優點。 _ 本Λ細形態之感光性樹脂組合物中,視需要亦可 含有增感劑、吸光劑(染料)、交聯劑、塑化劑、顏料、填 充材枓、阻燃劑、穩定劑、密著性賦予劑、剝離促進劑、 :充氧化劑、香料、顯像劑、熱交聯劑等添加劑。該等添加 劑可單獨使用i種或者將2種以上組合使用。 ::添力:劑之調配比例只要為不損及感光性樹脂組合物 的特性之範圍則無特別,^ ^ ^ ^ ,,^ ^ 权野的疋相對於感光性樹脂 '•且a物總量為5〇質量%以下。 對於上述各成分,亦可將就各成分而例 加以組合。 丫(仕w者 關於感光性樹脂έ且人私制m 授拌而進行即可:又物之製備,只要以通常方法混合、 樹脂組合物中之情…士於1充材料、顏料添加至感光性 三_磨《分m2 分㈣拌機、均質機、 亦可進一步利用筛網、薄膜過渡器等進行過據。見而要 139313.doc -31 - 201001066 接著,就感光性樹脂積層體加以說明。感光性樹脂積層 月立具有以下構造.至少包含支持體、及由上述感光性樹脂 組合物所形成之感光性樹脂層。 作為支持體’例如可使用:銅、銅系合金、鐵、鐵系合 金等之金屬板,或聚對笨二曱酸乙二酯、聚丙稀、聚乙 烯、聚酯等之聚合物膜等。支持體之厚度較好的是卜丨5〇 μηι。 感光性樹脂層可藉由將上述本實施形態之感光性樹脂組 合物製成液狀並塗佈於支持體上而形成。 在將感光性樹脂組合物塗佈於支持體上時,視需要亦可 將該感光性樹脂組合物溶解於規定的溶劑中而形成固形物 為3 0〜60貝s %之溶液,並使用該溶液作為塗佈液。作為 該溶劑,例如可舉出:曱醇、乙醇、丙醇、乙二醇、丙二 2辛烷、癸烷、石油醚、石腦油、氫化石腦油、石腦油 命』Θ _、曱基異丁基酮、甲基乙基_、環己酮、甲 苯、二曱笨、四甲基苯、Ν,Ν_二甲基甲酿胺、乙二醇單乙 醇單曱趟、乙二醇單丁乙二醇單乙醚、二 乙一醇早曱醚、二乙二醇單丁醚、二乙二醇二甲醚、丙二 醇單甲_、丙二醇單㈣、二丙二醇二乙H乙二料 =二酸乙_、乙酸丁醋、乙二醇單乙喊乙酸酿、乙二 醇早丁喊乙酸S旨、-厂-3Ε含 —乙—%早乙醚乙酸酯、二乙二醇 =::、:π單甲醚乙酸醋、二丙二醇單曱― 專之有機洛劑,或者該等之混合溶劑。 作為塗佈之方法,例如可舉出:輥式塗佈、刮刀式塗 139313.doc -32· 201001066 佈、凹版塗佈、氣刀塗佈、狹縫擠遂式塗佈、棒式塗佈等 之方法。又,溶劑之去除例如可藉由加熱而進行,此時之 加熱溫度較好的是約70〜15(rc,加熱時間較好的 分鐘。 旦關於以上述方式形成之感光性樹脂層中之殘存有機溶劑 量,就防止後續步驟中的有機溶劑之擴散之觀點而言,二 好的是2質量%以下。 又 又,感光性樹脂層之厚度係根據用途而不同 去除溶劑後之厚度為⑻μιη左右。 子的疋 於支持體及感紐樹脂層中,視需要亦可利用保護膜將 感光性樹脂層之與支持體側相反側之面加以被覆。、 /乍為保護膜,可舉出:聚乙稀、聚丙烯等之聚合物臈 專。又’保護膜較好的是低魚眼(fish eye)之膜,關於 胰與感光性樹脂層之間的接著力,為自感光性樹脂層 易地剝離保護膜,較妊的a ^ 間的接著力。#好的疋小於感光性樹脂層與支持體之 又’於支持體與感光性樹脂層之間及/或感光 與保護膜之間,亦可進而具備緩衝層、接著層、光吸I 層、阻乳層等之中間層或保護層。 感光性樹脂積層體例如可直接以平板狀之形態加以儲 :面it於感光性樹脂層的一方之面上(未加保護而露出 之面)積層保護膜並捲繞 之形態加以錯存。偷“上而以捲筒狀 ‘,、、4心’只要係先前所❹者則無特 別限疋,例如可舉出··聚乙烯樹脂、聚丙稀樹脂、聚苯乙 139313.doc -33- 201001066 :=、聚氯乙稀樹脂、ABS樹脂㈣腈_丁二烯·苯乙稀 =物)4之塑料。儲存時,較好的是以支持體成為最 二方式進订捲繞…於捲繞成捲筒狀之感光性樹脂 =體之端面,就保護端面之觀點而言較好的是設置端面 =杜此外就㈣緣融合之觀點而言較好的是設置防潮端 牛。又,在將感光性樹脂積層體捆包時,較好的是包 透濕性較小之黑色片材中而進行包裝。 以下,就光阻圖案之形成方法加以說明。 性案之形成方法係將上述感光性樹脂積層體之感光 :曰層:密著方式積層於基材上-圖像狀照射活性光 部分=㈣㈣部去除。對於未照㈣活性光線之 m: ° ’由於含1,2_秦酿二疊氮基之感光劑與鹼溶性酚 :二產生相互作用而發揮作為溶解抑制劑之作用,故不溶 於驗。然巾’對於照射到活性光線之部分而古,含&quot;鼓 :二疊氮基之感光劑發生光分解,從而失去溶解抑制二 错此,照射到活性光線之曝光部分成為驗溶性。 =感光性樹脂層積層於基材上之積層方法,可舉 广光性樹脂積層體具有保護膜之情形時將保護膜去 二二後-邊將感光性樹脂層加熱至心抓左右一邊利 等以❹·1〜1 MPa左右(1〜,,之壓力壓 =基材上之方法等。該積層步驟亦可於減塵下進行。積 層感光性樹脂層之基材的表面並無特別限制。 、 於光罩圖案而以圖像狀對以上述方式積層 於基材上之感光性樹脂層照射活性光線,形成曝光部。此 139313.doc •34- 201001066 時二於存在於感光性樹月旨層上之支持體對活性光線為透明 之情形時’可通過支持體照射活性光線,於支持體對活性 光線表現出遮光性之情形時,將支持體去除後對感光性樹 月曰層照射活性光線。作為活性光線之光源,可使用先前公 . 知之光源,例如碳弧燈、水銀蒸氣孤燈、高壓水銀燈、氤 .氣燈等之可有效發射出紫外線、可見光等者。X,亦可採 用雷射直接繪圖曝光法等。 ☆形成曝光部後’藉由顯影去除曝光部之感光性樹脂 層’藉此形成光阻圖案。作為該曝光部之去除方法,可舉 出·於感光性樹脂層上存在支持體之情形時,α自動去皮 機(auto peeler)等將支持體去除,利用使用鹼性水溶液、 ^系』〜液彳機洛劑等之顯影液之濕式顯影或乾式顯影 等去除曝光。p而進仃顯影之方法等。作為濕式顯影中所使 之驗例如可舉出·碳酸鈉、碳酸鉀、氨等之弱驗性無 機化合物;氫氧化鈉、氫氧化鉀等之鹼金屬化合物;氫氧 〇 化鈣寻之鹼土金屬化合物;單甲基胺、二曱基胺、三甲基 月女 '單乙基胺、二乙基胺、三乙基胺、單丙基胺、二甲基 6基胺、單乙醇胺、二乙醇胺、三乙醇胺、乙二胺、二乙 月女曱基丙烯酉夂—甲基胺基乙醋、聚乙稀亞胺等之弱驗 性有機化合物;氫氧化四甲基錢、氯氧化四乙基錢等。該 等係以水溶液方式單獨使用1種或者將2種以上組合使用。 驗性水溶液之pH值較好的是設為㈣之範圍,其溫度係根 據感光性樹脂層之顯影性而加以調整。又,於驗性水溶液 中亦可/昆入界面活性劑、消泡劑、有機溶劑等。作為上述 139313.doc -35· 201001066 顯影之方式,你,丨‘ 7银, 了舉出··浸潰方式、噴霧方式、刷洗、 撞擊等。 再者’視需要亦可進行60〜2赃左右之加熱等作為顯影 後之處理,藉此使光阻圖案硬化而使用。 :述方式而獲彳寸光阻圖案。此時,因使用可充分防止 屑之產生之感光性樹脂層’故亦可充分地防止由切屑所 造成的基材或貼合機運作環境之污染,結果可形成缺陷足 夠^之光阻圖案。又,光阻膜之曝光部分容易溶解於弱驗 中而自基材上剥離,藉由使用弱驗顯影性極為良好之本發 明之感光性樹脂組合物,可獲得光阻圖案。 &quot;以上’就本發明之較佳實施形態進行了說明,但本發明 亚不限定於上述實施形態。本發明可於不偏離其主旨之範 圍内施以各種變形。 〈印刷電路板之製造方法〉 本發明之印刷電路板之製造方法係藉由繼使用銅箱積層 板或可撓式基板作為基板之上述光阻圖案形成方 以下步驟而進行。 田 :先’利用蝕刻法或者鍍敷法等已知方法,對藉由顯影 而路出之基板的銅面形成導體圖案。 其後,藉由再次曝光、顯影而將光阻圖案去除,獲得所 需之印刷電路板。 ' &lt;導線架之製造方法&gt; 本發明之導線架之製造方法係藉由繼使用銅、鋼人金、 鐵系合金等之金屬板作為基板的上述光阻圖案之形成方法 1393J3.doc -36- 201001066 後經由以下步驟而進行。 ''先對藉由,1%而露出之基板進行餘刻,形成導體圖 案。 -後卩與上述印刷電路板之製造方法同樣之方法將殘 #之光阻圖案去除,獲得所需之導線架。 &lt;半導體封裝之製造方法&gt;Commercial products such as those manufactured by Silicone. These may be used alone or in combination of two or more. f. The blending ratio of the surfactant is preferably 5% by mass or less based on the total amount of the photosensitive resin composition. When the blending ratio exceeds 5% by mass, the pattern formability tends to decrease as compared with the case where the blending ratio is in the above range. The photosensitive resin composition may further contain a bonding aid to improve adhesion to a substrate or the like. As the adhesion aid, a functional decane coupling agent is preferred. Here, the term "functional decane coupling agent" means a decane coupling agent having a reactive substituent such as a carboxyl group, a mercapto fluorenyl fluorenyl group, an isocyanate group or an epoxy group. Examples of the functional decane coupling agent include: tridecyloxydecyl benzoic acid, γ-methacryloxypropyltrimethoxydecane, vinyltriethoxydecane, vinyltrimethoxy Basear, ¥-glycidoxypropyltrimethoxydecane, tridecyloxydecylpropyl isocyanate and 1,3,5-fluorene-tris(tridecyloxydecylpropyl)isocyanate. These may be used alone or in combination of two or more. The blending ratio of the above-mentioned auxiliary agent is preferably 20% by mass or less based on the total amount of the photosensitive resin composition. If the blending ratio exceeds 2 〇 mass 139313.doc -29- 201001066%, there is a tendency that development is likely to occur as compared with the case where the blending ratio is in the above range. The photosensitive resin composition may further contain an acid or a high boiling point solvent to finely adjust the solubility with respect to the alkaline developing solution. Examples of the acid include acetic acid, propionic acid, n-butyric acid, isobutyric acid, n-valeric acid, isovaleric acid, benzoquinone, and cinnamic acid, which are mono-repules; lactic acid, 2-light-based butyric acid, and 3 - butylbutyric acid, salicylic acid 'm-hydroxybenzoic acid, p-hydroxybenzoic acid, 2-hydroxycinnamic acid, 3-cyanocinnamic acid, 4-hydroxycinnamic acid, 5-hydroxyisophthalic acid, lilac Hydroxy monocarboxylic acid such as acid; oxalic acid, succinic acid, glutaric acid, hexamethylene, m glutenic acid, itaconic acid, hexahydrophthalic acid, phthalic acid, isophthalic acid , for stearic acid, 1,2-cyclohexanedidecanoic acid, 1,2, P. '1^ -田λ分^ acid, &quot; human not one formic acid, 1,2-ring 巳 π A defeat, 1,2 ί Yihexi dicarboxylic acid, trimellitic acid, pyromellitic acid, cyclopentane tetracarboxylic acid, butane tetracarboxylic acid, 1,2,5,8-naphthalene tetradecanoic acid, etc. Carboxylic acid; phthalic anhydride, succinic anhydride, citraconic anhydride, dodecyl succinic anhydride, triterteryl phthalic anhydride maleic anhydride, hexahydrophthalic anhydride, methyl tetralin, scorpion Methyl bicycloheptanic acid anhydride, 1,2,3,4-butanetetracarboxylic acid, cyclopentafurone -Red^ Τ 酐-anhydride, phthalic anhydride, quaternary tetrazine needle, trimellidil 36 Χ anhydride, ketone ketone tetraphthalic acid dianhydride, ethylene glycol bis-phthalic anhydride ester, Gan , acid needles such as one / Α / two partial stearic anhydride esters. Further, 0 high boiling point solvent, for example, '1 gamma can be mentioned: Ν-methyl decylamine, hydrazine, hydrazine-dimethyl dimethyl amide, hydrazine - A certain — secret - * this amine, Ν-mercapto ethane Amine, hydrazine, hydrazine-dihydrazino amide, fluorene-fluorenyl η ratio 咕 咕 疋 疋 I brewing I, dimethyl sulfoxide, benzyl ethyl ether, di-e-ether, acetone propyl _, Li &quot; Vorketone, caproic acid, caprylic acid, 1-octyl alcohol, 1 alcohol, benzyl alcohol, ethyl brewing; ^ 卞酉曰, ethyl bromide, diethyl oxalate, cis 139313.doc -30· 201001066 diacid乙乙酷, γ·丁内醋, ethylene carbonate, propylene carbonate, phenyl cellosolve, etc. These may be used alone or in combination of two or more. The above acid or high boiling solvent The blending ratio can be adjusted according to the coating method by $, and is not limited as long as it can be uniformly mixed in the photosensitive resin composition. For example, 'the ratio of the acid or the high-foam solvent is relatively good. The total amount of the photosensitive resin composition is 6 〇 mass% or less, and further = 4 〇 mass% or less. In this case, there is an advantage that the characteristics of the photosensitive sapphire composition are not impaired. The photosensitive resin composition of the fine form may contain a sensitizer, a light absorbing agent (dye), a crosslinking agent, a plasticizer, a pigment, a filler, a flame retardant, a stabilizer, and a sealant as needed. Additives such as a property-imparting agent, a peeling accelerator, an antioxidant, a fragrance, a developer, and a thermal crosslinking agent, etc. These additives may be used singly or in combination of two or more. There is no particular limitation as long as the range of the characteristics of the photosensitive resin composition is not impaired, and the total amount of the yttrium of the photosensitive material is 5% by mass or less with respect to the photosensitive resin. Each of the above components may be combined with each other as an example. 丫 (There may be a photosensitive resin έ and a human-made m may be mixed and mixed: a preparation of the material may be carried out by a usual method, a resin combination In the case of things... Shi 1 material, pigment added to the photosensitive three _ mill "minute m2 points (four) mixer, homogenizer, can also be further used screens, membrane transitions, etc.. See also 139313. Doc -31 - 201001066 Next, the photosensitive resin laminate is explained The photosensitive resin laminate has the following structure. It contains at least a support and a photosensitive resin layer formed of the above-mentioned photosensitive resin composition. As the support, for example, copper, a copper alloy, iron, or iron can be used. A metal plate such as an alloy, or a polymer film of polyethylene terephthalate, polypropylene, polyethylene, polyester, etc. The thickness of the support is preferably 丨5丨μηι. Photosensitive resin layer The photosensitive resin composition of the present embodiment can be formed into a liquid form and applied to a support. When the photosensitive resin composition is applied onto a support, the photosensitive material can be used as needed. The resin composition is dissolved in a predetermined solvent to form a solution having a solid content of 30 to 60 s%, and this solution is used as a coating liquid. Examples of the solvent include decyl alcohol, ethanol, propanol, ethylene glycol, propylene di 2 octane, decane, petroleum ether, naphtha, hydrogenated naphtha, and naphtha. Mercaptoisobutyl ketone, methyl ethyl _, cyclohexanone, toluene, dioxane, tetramethyl benzene, hydrazine, hydrazine dimethyl dimethyl amide, ethylene glycol monoethanol hydrazine, ethylene Alcohol monobutyl glycol monoethyl ether, diethylene glycol early oxime ether, diethylene glycol monobutyl ether, diethylene glycol dimethyl ether, propylene glycol monomethyl _, propylene glycol mono (tetra), dipropylene glycol diethylene H ethylene two materials = Diacid B, butyl acetate, ethylene glycol, single ethyl acetate, acetic acid, ethylene glycol, acetic acid, S, acetic acid, acetic acid, acetic acid, acetic acid, acetic acid, acetic acid, ethylene glycol , π monomethyl ether acetate vinegar, dipropylene glycol monoterpene - a special organic agent, or a mixed solvent of these. Examples of the coating method include roll coating, doctor blade coating 139313.doc-32·201001066 cloth, gravure coating, air knife coating, slit extrusion coating, bar coating, and the like. The method. Further, the removal of the solvent can be carried out, for example, by heating, and the heating temperature at this time is preferably about 70 to 15 (rc, preferably a minute of heating time.) Remaining in the photosensitive resin layer formed in the above manner. The amount of the organic solvent is preferably 2% by mass or less from the viewpoint of preventing the diffusion of the organic solvent in the subsequent step. Further, the thickness of the photosensitive resin layer is different depending on the use, and the thickness after removing the solvent is about (8) μιη. In the support and the inductive resin layer, if necessary, the surface of the photosensitive resin layer opposite to the support side may be covered with a protective film. / / is a protective film, and may be exemplified by: A polymer such as ethylene or polypropylene is used exclusively. The 'protective film is preferably a film of a fish eye. The adhesion between the pancreas and the photosensitive resin layer is easy to self-photosensitive resin layer. The protective film is peeled off, and the adhesion between the positive a ^ is better than the photosensitive resin layer and the support between the support and the photosensitive resin layer and/or between the photosensitive film and the protective film. It can also have a buffer layer, The intermediate layer or the protective layer of the layer, the light-absorbing layer I, the moisture barrier layer, etc. The photosensitive resin layered body can be directly stored in the form of a flat plate: the surface is placed on one side of the photosensitive resin layer (not added) The surface that is covered by the protective film and wound up is staggered. If you sneak up the "rolled up", and the 4 heart 'as long as it is the previous one, there is no special limit, for example, ·Polyethylene resin, polypropylene resin, polystyrene 139313.doc -33- 201001066 :=, polyvinyl chloride resin, ABS resin (tetra) nitrile-butadiene styrene = material) 4 plastic. When storing, Preferably, the support is wound in the second-order manner. The photosensitive resin is wound into a roll-shaped photosensitive resin = the end face of the body. From the viewpoint of protecting the end face, it is preferable to provide the end face = Du (4) In view of the fusion of the edges, it is preferable to provide a moisture-proof end cow. When the photosensitive resin laminate is bundled, it is preferably packaged in a black sheet having a small moisture permeability and packaged. A method of forming a photoresist pattern is described. The method for forming a pattern is to use the above photosensitive resin. Photosensitive layer of the layer: 曰 layer: laminated on the substrate in a dense manner - image-like illuminating active light portion = (four) (four) part removal. For unilluminated (four) active light m: ° ' due to the inclusion of 1,2_Qin The nitrogen-based sensitizer interacts with the alkali-soluble phenol: two to function as a dissolution inhibitor, so it is insoluble in the test. However, the towel is used to irradiate the active light, and contains the drum: diazide. The sensitizer is photodecomposed to lose the dissolution inhibition, and the exposed portion irradiated with the active light becomes the solubility test. The method of laminating the photosensitive resin layer on the substrate is to protect the broad-light resin laminate. In the case of a film, when the protective film is removed, the photosensitive resin layer is heated to the left and right sides of the core, and the pressure is about 1 to 1 MPa (1 to 1, the pressure pressure = the method on the substrate, etc.). This lamination step can also be carried out under dust reduction. The surface of the substrate on which the photosensitive resin layer is laminated is not particularly limited. The photosensitive resin layer laminated on the substrate in the above-described manner is irradiated with active light in an image pattern to form an exposed portion. 139313.doc •34- 201001066 When the support present on the photosensitive tree layer is transparent to the active light, the active light can be irradiated through the support, and the support exhibits light-shielding to the active light. In the case where the support is removed, the photosensitive tree layer is irradiated with active light. As the light source of the active light, a known light source such as a carbon arc lamp, a mercury vapor orphan lamp, a high pressure mercury lamp, a gas lamp, or the like can be used to efficiently emit ultraviolet rays, visible light, or the like. X, laser direct drawing exposure method, etc. can also be used. ☆ After the exposure portion is formed, the photosensitive resin layer of the exposed portion is removed by development to thereby form a photoresist pattern. In the case where the support portion is present on the photosensitive resin layer, the support is removed by an auto peeler or the like, and an alkaline aqueous solution is used. The exposure is removed by wet development or dry development of a developer such as a liquid helium agent. The method of developing the p, etc. Examples of the wet development test include a weak inorganic compound such as sodium carbonate, potassium carbonate or ammonia; an alkali metal compound such as sodium hydroxide or potassium hydroxide; and an alkali-alkaline calcium hydroxide. Metal compound; monomethylamine, didecylamine, trimethylmoon female 'monoethylamine, diethylamine, triethylamine, monopropylamine, dimethyl 6-amine, monoethanolamine, two Awesome organic compounds such as ethanolamine, triethanolamine, ethylenediamine, diethylene sulfonium acrylamide-methylaminoacetate, polyethyleneimine, etc.; tetramethylammonium hydroxide, tetrachloroethylene oxide Base money and so on. These may be used singly or in combination of two or more kinds in the form of an aqueous solution. The pH of the aqueous test solution is preferably in the range of (4), and the temperature is adjusted in accordance with the developability of the photosensitive resin layer. Further, a surfactant, an antifoaming agent, an organic solvent or the like may be added to the aqueous test solution. As the above 139313.doc -35· 201001066 development method, you, 丨 ‘ 7 silver, cite the · dipping method, spray method, brushing, impact and so on. Further, if necessary, heating of about 60 to 2 Torr may be performed as a process after development, whereby the photoresist pattern is cured and used. : The method of obtaining the inch resist pattern. In this case, since the photosensitive resin layer which can sufficiently prevent the generation of chips is used, contamination of the substrate or the bonding machine operating environment caused by the chips can be sufficiently prevented, and as a result, a photoresist pattern having a sufficient defect can be formed. Further, the exposed portion of the resist film is easily dissolved in the weak test and peeled off from the substrate, and a resist pattern can be obtained by using the photosensitive resin composition of the present invention which is excellent in weak developability. The above description has been made on the preferred embodiments of the present invention, but the present invention is not limited to the above embodiments. The present invention can be variously modified without departing from the spirit and scope of the invention. <Manufacturing Method of Printed Circuit Board> The method of manufacturing a printed circuit board according to the present invention is carried out by the following steps of forming the resist pattern using a copper box laminate or a flexible substrate as a substrate. Field: First, a conductor pattern is formed on the copper surface of the substrate which is ejected by development by a known method such as etching or plating. Thereafter, the photoresist pattern is removed by re-exposure and development to obtain a desired printed circuit board. &lt;Manufacturing Method of Lead Frame&gt; The method of manufacturing the lead frame of the present invention is a method of forming the above-described resist pattern by using a metal plate such as copper, steel, or an iron-based alloy as a substrate 1393J3.doc - 36- 201001066 After the following steps. ''Firstly, the substrate exposed by 1% is left to form a conductor pattern. - After the same method as the above-described method of manufacturing a printed circuit board, the residual photoresist pattern is removed to obtain a desired lead frame. &lt;Manufacturing method of semiconductor package&gt;

-發月之半V體封裝之製造方法係藉由繼使用作為LSI (' 電路已$成的晶圓作為基板之上述光阻圖案之形成方法 後經由以下步驟而進行。 •于藉由顯衫而露出之開口部實施銅、焊錫等之柱狀鍍 敷’而形成導體圖案。 ”後以與上述印刷電路板之製造方法同樣之方法將殘 存之光阻圖案去除,進而利用触刻將柱狀鑛敷以外之部分 勺薄金屬層去除’藉此獲得所需之半導體封裝。 &lt;薄膜電晶體之製造方法&gt; 1/ —、電曰曰體之製造方法中,例如,於梦、玻璃、樹脂片 材等之基板上使用遮罩而形成規定形狀之閘電極後,藉由 上述光阻圖案形成方法及去除方法而形成閘極絕緣膜,進 而於°亥 '纟巴緣膜之整個面上形成半導體薄膜層,於該薄膜層- The manufacturing method of the half moon V-body package is carried out by using the following method as a method of forming the above-described resist pattern of the LSI (the circuit in which the circuit has been formed as a substrate). The exposed opening portion is subjected to columnar plating of copper or solder to form a conductor pattern. Then, the remaining photoresist pattern is removed in the same manner as the method for manufacturing the printed wiring board, and the columnar shape is further removed by contact. A portion of the thin metal layer other than the mineral deposit is removed to thereby obtain the desired semiconductor package. <Method for producing a thin film transistor> 1/-, a method for manufacturing an electric body, for example, in dream, glass, After a gate electrode having a predetermined shape is formed on a substrate such as a resin sheet by using a mask, a gate insulating film is formed by the photoresist pattern forming method and the removal method, and further on the entire surface of the film Forming a semiconductor thin film layer on the thin film layer

使用遮罩而形成規定形狀之源電極及汲電極,藉此可獲 得薄膜電晶體。 X 實施例 利用貫施例更詳細地說明本發明。 [貝施例1〜9,比較例1,實施例10〜23,比較例2、3] 139313.doc -37- 201001066 &lt; 1 ·感光性樹脂組合物之製備&gt; 將表1及表2所示之化合物加以混合’製備感光性樹脂組 合物。表1及表2中之值為固形物量。 表中之記號如下示。 A-1 :甲酚酚醛清漆樹脂,重量平均分子量為10,000, 分子量分布約為10,m體:P體=6 : 4(旭有機材(股)製造’ EP4020G(商品名)) A-2 :苯酚酚醛清漆樹脂,重量平均分子量為7,000,分 子量分布約為6(旭有機材(瓞)製造,PAPS-pN70(商品名)) B-1 : 4,4,-(1-{4-[1-(4-經基苯基)_1_曱基乙基]苯基}亞乙 基)雙驗之6-二疊氮-5,6-二氫_5_側氧基-1-萘續酸單、二或 三S旨(Daito Chemix(股)製造之PA_3 (商〇口名)) Β-2 : 2,3,4,4'-四經基二笨曱嗣之6 -二疊氮-5,6 -二氫-5-側 氧基-1-萘磺酸單、二、三或四醋(Daito Chemix(股)製造之 DTEP-250(商品名)) C-1:聚對羥基苯6烯’重量平均分子量為 20,000(Chemiway(股)製造 ’ MARUKA LYNCUR Μ H-2Ρ(商品名)) C-2:對乙烯基苯酚與曱基丙烯酸甲酯之1: 1(莫耳比) 共聚物,重量平均分子量為l〇,〇〇〇(Chemiway(股)製造, MARUKA LYNCUR CMM(商品名)) D-1 :於雙酚A之兩端各具有3莫耳丙二醇之化合物(東邦 化學(股)製造,BISOL 6PO(商品名)) D-2 ··上述通式⑴中兩邊之p=5、q=〇、r=〇之化合物 139313.doc •38· 201001066 BA-10 GLYCOL(日本乳化劑製造) D-3 :上述通式(I)中兩邊之p = 0、q=3、r=〇之化合物 PC-9〇3(日本乳化劑製造) D-4 :上述通式⑴中兩邊之p=3、q=2、Γ=〇之化合物 UNIOL DAB-800(曰本油脂製造) D-5 :上述通式(I)中兩邊之p=l5、q=2、Γ=〇之化合物 ΒΑΡ4-30(曰本乳化劑製造) D-6 :於雙酚Ε化合物之兩端各具有3莫耳丙二醇之化八 物 樣品Ε(東邦化學製造) D-7 :於雙酚F化合物之兩端各具有3莫耳丙二醇之化合 物 樣品F(東邦化學製造) D-8:於雙酚S化合物之兩端各具有3莫耳丙二醇之化合 物 樣品S(東邦化學製造) D-9 .聚氧乙烯-聚氧丙烯縮合物(ADEKA(股)製造之 Adeca Pluronic L-44(商品名)) &lt;2.感光性樹脂積層體之製造〉 於表1及表2所不組成之感光性樹脂組合物中添加溶劑甲 基乙基酮直至固形物達到50質量%,充分攪拌、混合,利 用棒式塗佈機將感光性樹脂組合物溶液均勻地塗佈於Μ μη^厚之聚對苯二甲酸乙二酷膜上,於9〇t之乾2機中乾 燥2分鐘,形成1〇 μηι厚之感光性樹脂層。接著,將 厚之聚乙烯膜貼合於感光性樹脂層之表面上而獲得感光性 樹脂積層體。 &lt;3·評價基板之製作&gt; 139313.doc -39- 201001066 基板整面: 評價用基板係準備如下者:使用積層有3 5 μιη壓延鋼猪 之〇_4 mm厚之銅箔積層板,以〇.20 MPa之噴射壓力對表面 進行噴砂研磨(Japan Carlit(股)製造,SAKURUNDUM R(註 冊商標)# 220)。 層壓: 一邊將感光性樹脂積層體之聚乙烯膜剝離,一邊利用熱 輥貼合機(旭化成工程(股份)製造,AL_7〇)wi〇5t:之輥溫 度而層壓於加以整面且預熱至⑼工之銅箔積層板上。空氣 壓力係設為0.35 MPa,層壓速度係設為丨5 m/min。 曝光: 將支持體剝離’使祕玻璃光罩,利用具有超高壓水銀 燈之曝光機(投影式曝光裝置則_侧4:加。電機 股份有限公司製造)對評價基板進行投影曝光。 顯影: 顯影液,於2 〇 顯影。其後,於 令進行約20秒水 將2.38質量%四甲基銨水溶液作為驗性 之溫度下藉由浸潰法對所得評價基板進行 溫度為⑽之條件下,藉由浸潰法於= 洗,再利用乾燥器進行乾燥。 &lt;4.評價&gt; 切屑評價 利用NT切割刀對以支持體側作為上 樹脂積層體沿直線進行_米切害'之上述感光性 分及其周邊。以如下古4 ° 時目測觀察切割部 方式對切相驗之評價結果進行分 139313.doc •40- 201001066 級。 A :未產生切屑 B :產生切屑 感度之評價: mJ/cm2之範圍中,脾 T 肘經過上述「曝 「顯影」步驟έ士專你夕人 、 鄄、。果此夠形成最良好 感度」。A thin film transistor can be obtained by forming a source electrode and a germanium electrode of a predetermined shape using a mask. X EXAMPLES The present invention will be described in more detail by way of examples. [Beast Example 1 to 9, Comparative Example 1, Examples 10 to 23, Comparative Example 2, 3] 139313.doc -37- 201001066 &lt;1 Preparation of Photosensitive Resin Composition&gt; Table 1 and Table 2 The compound shown is mixed to prepare a photosensitive resin composition. The values in Tables 1 and 2 are the amounts of solids. The symbols in the table are as follows. A-1: cresol novolak resin, weight average molecular weight of 10,000, molecular weight distribution of about 10, m body: P body = 6: 4 (asahi organic material (stock) manufacturing 'EP4020G (trade name)) A-2: Phenolic novolak resin, weight average molecular weight of 7,000, molecular weight distribution of about 6 (as manufactured by Asahi Organic Materials, PAPS-pN70 (trade name)) B-1 : 4,4,-(1-{4-[1 -(4-Phenylphenyl)_1-mercaptoethyl]phenyl}ethylidene) double-assay 6-diazide-5,6-dihydro-5-sideoxy-1-naphthalene acid Single, second or triple S (PA_3 (Shangkou name) manufactured by Daito Chemix) Β-2 : 2,3,4,4'-tetramethylene 2 abbreviated 6-diazide-5 , 6-Dihydro-5-oxo-1-naphthalenesulfonic acid mono-, di-, tri- or tetra- vinegar (DTEP-250 (trade name) manufactured by Daito Chemix Co., Ltd.) C-1: polyparaphenylene 6 The olefin' weight average molecular weight is 20,000 (Chemiway Manufacture 'MARUKA LYNCUR Μ H-2 Ρ (trade name)) C-2: 1:1 (mole ratio) copolymer of vinyl phenol and methyl methacrylate , weight average molecular weight is l〇, 〇〇〇 (Chemiway (manufactured by the company), MARUKA LYNCUR CMM (trade name)) D-1: bisphenol A compound having 3 moles of propylene glycol at both ends of A (manufactured by Toho Chemical Co., Ltd., BISOL 6PO (trade name)) D-2 ·· p=5, q=〇, r=〇 on both sides of the above formula (1) Compound 139313.doc •38· 201001066 BA-10 GLYCOL (manufactured by Japanese emulsifier) D-3: Compound PC-9〇3 of p = 0, q=3, r=〇 on both sides of the above formula (I) (manufactured by Japanese emulsifier) D-4 : Compound UNIOL DAB-800 (manufactured by Sakamoto Oil & Fat) of p=3, q=2, Γ=〇 on both sides of the above formula (1) D-5: the above formula (I) P=l5, q=2, Γ=〇 of the compound on both sides ΒΑΡ4-30 (manufactured by emulsifier) D-6: Sample of octane diol in each of the two ends of the bisphenol hydrazine compound Ε (Manufactured by Toho Chemical Co., Ltd.) D-7: Compound F having 3 moles of propylene glycol at both ends of the bisphenol F compound (manufactured by Toho Chemical Co., Ltd.) D-8: 3 moles of propylene glycol at both ends of the bisphenol S compound Compound Sample S (manufactured by Toho Chemical Co., Ltd.) D-9. Polyoxyethylene-polyoxypropylene condensate (Adeca Pluronic L-44 (trade name) manufactured by ADEKA Co., Ltd.) &lt;2. Manufacture of photosensitive resin laminate 〉 in Table 1 The solvent methyl ketone was added to the photosensitive resin composition which is not composed of Table 2 until the solid content reached 50% by mass, and the mixture was sufficiently stirred and mixed, and the photosensitive resin composition solution was uniformly applied by a bar coater. The Μμη^thick polyethylene terephthalate film was dried in a 9 〇 dry machine for 2 minutes to form a photosensitive resin layer of 1 μm thick. Then, a thick polyethylene film is bonded to the surface of the photosensitive resin layer to obtain a photosensitive resin laminate. &lt;3·Production of Evaluation Substrate&gt; 139313.doc -39- 201001066 Substrate Whole Surface: The evaluation substrate is prepared as follows: a copper foil laminate having a thickness of 3 5 μm of rolled steel pig _4 mm thick is used. The surface was subjected to sandblasting at a spray pressure of 2020 MPa (manufactured by Japan Carlit Co., Ltd., SAKURUNDUM R (registered trademark) #220). Lamination: The polyethylene film of the photosensitive resin laminate is peeled off and laminated on the entire surface by a roll of a hot roll laminator (made by Asahi Kasei Engineering Co., Ltd., AL_7〇) wi〇5t: Heat to the (29) copper foil laminate. The air pressure system was set to 0.35 MPa, and the laminating speed was set to 丨5 m/min. Exposure: The support was peeled off. The glass mask was exposed, and the evaluation substrate was subjected to projection exposure using an exposure machine having an ultrahigh pressure mercury lamp (projection exposure apparatus _ side 4: gal., manufactured by Electric Co., Ltd.). Development: Developer, developed at 2 。. Thereafter, the temperature of the obtained evaluation substrate was subjected to a temperature of (10) by a dipping method under the conditions of a water temperature of 2.38 mass% tetramethylammonium solution for about 20 seconds, and the temperature was (10) by the dipping method. Then use a dryer to dry. &lt;4. Evaluation&gt; Chip evaluation The above-mentioned photosensitive component and its periphery were formed by using an NT cutter to the side of the support as the upper resin laminate in a straight line. The results of the cross-checking test were divided into 139313.doc •40- 201001066 by visual inspection of the cutting section at 4 °. A: No chip is generated B: Swarf is generated. Evaluation of sensitivity: In the range of mJ/cm2, the spleen T elbow is subjected to the above-mentioned "exposure" process, and the gentleman specializes in you, 鄄, 鄄. If this is enough, the best feeling is formed."

於 200 mJ/cm2至 1〇〇 光」步驟進而經過上述 之圖案之曝光量稱為「 最小顯影時間之評價: ,, 〜7υ丨土僻脂積層艚夕 感光性樹脂層之基板進行曝光,並 小入η里止Α 進订,,頃衫。目測確認將 -王曝光4分之感光性樹脂層去除之狀態,將直至成為此 狀態所費之時間作為最小顯影時間。 ,、·、 圖案形成性之評價: 通過具有線:間隙為1 ·〗$ _安&gt; 、,、— 糸馬1·1之圖案之鉻玻璃光罩進行曝光, 進仃‘41。於以上述最小顯影時間之i ·2倍之時間進行The exposure amount from the above-mentioned pattern in the step of 200 mJ/cm2 to 1 〇〇2 is referred to as "the evaluation of the minimum development time: ,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Into the η 里 Α Α Α Α Α Α Α Α Α Α Α Α 。 。 Α Α 。 。 。 。 。 。 。 。 王 王 王 王 王 王 王 王 王 王 王 王 王 王 王 王 王 王 王 王 王 王 王 王Evaluation of the sensation: The exposure is carried out by a chrome glass reticle having a pattern of a gap of 1 · 〗 _ _ _ _ , 、 、 糸 1 1 , , 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 41 · 2 times the time

顯影時’目測觀察線部分與間隙部分是否清楚地分開,以 如下方式進行分級。 A :線部分與間隙部分清楚地分開 B :線部分與間隙部分並未分開 &lt;5.評價結果&gt; 實施例及比較例之評價結果示於表!及表2。 表1可知,貫施例卜9中,切屬評價、感度、最小顯影 a 圖案形成性全部優異,但比較例1中,因不含本發 斤使用之(C)側鏈上具有源自芳香族羥基化合物之基 i393l3.doc -41 . 201001066 之鹼溶性樹脂,故產生切屑並且感光性樹脂層非常脆,無 法進行其他評價。 由表2可知,對於實施例1〇〜22之感光性樹脂組合物而 3,可充分抑制切屑之產生,並且感度、顯影時間、圖案 形成性之平衡優異,相對於此,比較例2及3之感光性樹脂 。物因不含(D)成分’故產生切屑,而且由於不能進行 顯影故無法形成圖案。 139313.doc -42- 201001066 【i】 比較例 1 00 « 實施例 9 tn m 〇 ιη &lt;Ν 800 實施例 8 ο ΙΛ Ο \η 800 實施例 7 ο Ο its 1000 Ο 實施例 6 〇 ο 800 in &lt; 實施例 5 in η ο yti ro 600 IT) &lt;s &lt; 實施例 4 ΙΛ ο tn &lt; 1200 &lt; 實施例3 ο ο in &lt; 800 tn &lt; 實施例2 in % &lt; 800 o &lt; 實施例1 ο &lt; 800 jri &lt; A-l A-2 Β-1 Β-2 C-1 C-2 D-l (等級) B (等級) 感光性 樹脂組合物 (質量份) 切屑評價 曝光量(感度) 最小顯影時 間 圖案形成性 筚敖#教丧#-·驾鉍毋«I* 139313.doc -43- 201001066 【&lt;Νΐ 比較 例3 〇 * 比較i 例2 _1 ca 〇 英η &lt; 〇 00 ο PQ ITJ m % &lt; 〇 &lt; in &lt; 1200 &lt; ¥ ^ &lt; 〇 00 &lt; 鸯Ξ! 駟军 〇 ο &lt; 〇 § &lt; 駟¥ S &lt; 〇 g ΡΟ &lt; &lt; 〇 90 〇 &lt; 嫁;£ s % &lt; 〇 00 V) &lt; 駟5 s &lt; 〇 00 IT) P〇 &lt; 鸯2 V 5 % &lt; 〇 g V) ro &lt; 鸯2 駟5 % &lt; ο 茭 沄 &lt; 恥苳 云 &lt; ο 00 \n r^i &lt; 雀S &lt; ο 沄 &lt; 鸯2 駟军 % &lt; ο 00 Ο &lt; ¥Μ &lt; fS &lt; ώ fS CO fS ά Γ〇 a ά »Ti Ο Ο 卜 Q 00 〇 〇\ ά (等級) ϊ (等級) 感光性 樹脂组合物 (質量份) 切削評價 曝光量(感度) 最小顯影時間 圖案形成性 -44- 139313.doc 201001066 [產業上之可利用性] 本發明可利用於印刷電路板之製造,ic晶片搭載用導線 架之製造,金屬掩模製造等之金屬箔精密加工,以及 BGA、CSP等之封裝之製造,COF(Chip On Film,覆晶薄 膜)或TAB (Tape Automated Bonding,捲帶式自動接合)等 之帶狀基板之製造,半導體凸塊之製造,ITO電極或定址 電極、電磁波遮罩等平面顯示器的隔離壁之製造,以及利 用喷砂法對基材進行加工之方法。作為利用噴砂法之加 Γ: 工,可舉出:有機EL(Electroluminescence,電致發光)之 玻璃罩加工、石夕晶圓之開孔加工、陶曼之插腳加工。進 而,本發明之利用喷砂步驟之加工可利用於強電介膜以及 選自貴金屬、貴金屬合金、高炫點金屬、及高溶點金屬化 合物所組成之群中之金屬材料層的電極之製造。At the time of development, it was visually observed whether the line portion and the gap portion were clearly separated, and classification was performed in the following manner. A: The line portion is clearly separated from the gap portion B: the line portion is not separated from the gap portion &lt;5. Evaluation Results&gt; The evaluation results of the examples and comparative examples are shown in the table! And Table 2. As is clear from Table 1, in the Example 9, the cut evaluation, the sensitivity, and the minimum development a pattern formation property were all excellent, but in Comparative Example 1, the (C) side chain was derived from the fragrance because it did not contain the present hair. The base of the group hydroxy compound i393l3.doc -41 . 201001066 The alkali-soluble resin produced chips and the photosensitive resin layer was very brittle, and other evaluations could not be performed. As is clear from Table 2, in the photosensitive resin compositions of Examples 1 to 22, 3, the generation of chips was sufficiently suppressed, and the balance of sensitivity, development time, and pattern formation property was excellent. In contrast, Comparative Examples 2 and 3 were obtained. Photosensitive resin. Since the material does not contain the component (D), chips are generated, and since the development cannot be performed, the pattern cannot be formed. 139313.doc -42- 201001066 [i] Comparative Example 1 00 «Embodiment 9 tn m 〇ιη &lt; Ν 800 Example 8 ο ΙΛ Ο \η 800 Example 7 ο Ο its 1000 Ο Example 6 〇ο 800 in &lt;Embodiment 5 in η ο yti ro 600 IT) &lt;s &lt; Embodiment 4 ΙΛ ο tn &lt; 1200 &lt; Embodiment 3 ο ο in &lt; 800 tn &lt; Example 2 in % &lt; 800 o &lt;Example 1 ο &lt; 800 jri &lt; 800 Ari &lt; Al A-2 Β-1 Β-2 C-1 C-2 D1 (Grade) B (Grade) Photosensitive resin composition (parts by mass) Chip evaluation exposure amount ( Sensitivity) Minimum development time pattern formation 筚敖#教丧#-·driving«I* 139313.doc -43- 201001066 [&lt;Νΐ comparison example 3 〇* comparison i example 2 _1 ca 〇英η &lt; 〇 00 ο PQ ITJ m % &lt;〇&lt; in &lt; 1200 &lt; ¥ ^ &lt; 〇00 &lt; 鸯Ξ! 驷军〇ο &lt; 〇§ &lt; 驷¥ S &lt; 〇g ΡΟ &lt;&lt; 〇90 &lt;Marriage; £ s % &lt; 〇 00 V) &lt; 驷 5 s &lt; 〇 00 IT) P〇 &lt; 鸯 2 V 5 % &lt; 〇g V) ro &lt; 鸯 2 驷 5 % &lt;ο茭沄&; 苳 苳 00 & & & & & & & 驷 驷 驷 驷 驷 驷 驷 驷 驷 驷 驷 驷 驷 f f f f S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S S 〇a ά »Ti Ο Ο 卜 Q 00 〇〇 ά ά (grade) ϊ (grade) Photosensitive resin composition (parts by mass) Cutting evaluation exposure amount (sensitivity) Minimum development time pattern formation -44- 139313.doc 201001066 [Industrial Applicability] The present invention can be used for the manufacture of printed circuit boards, the manufacture of lead frames for ic chip mounting, the precision processing of metal foils such as metal mask manufacturing, and the manufacture of packages such as BGA and CSP, COF. (Chip On Film) or TAB (Tape Automated Bonding) manufacturing of strip substrates, fabrication of semiconductor bumps, isolation of flat displays such as ITO electrodes or address electrodes, electromagnetic wave masks Wall manufacturing, and profit A method of processing a substrate by sand blasting. As a blasting method, the glass is processed by an organic EL (Electroluminescence), a hole processing of a stone wafer, and a ceramic processing. Further, the processing by the blasting step of the present invention can be utilized for the production of electrodes of a ferroelectric film and a metal material layer selected from the group consisting of precious metals, precious metal alloys, high-point metals, and highly soluble metal compounds.

139313.doc -45 -139313.doc -45 -

Claims (1)

201001066 七、申請專利範圍·· 1.—種感光性樹脂組合物,其係含有(八)鹼溶性酚樹脂、 (B)含1,2-萘醌二疊氮基之感光劑、及(c)側鏈上具有源自 芳香族羥基化合物之基之鹼溶性樹脂而成者。 2·如请求項1之感光性樹脂組合物,其中上述(c)成分為含 有經基本乙烯作為共聚合成分之驗溶性樹脂。 3.如請求項1之感光性樹脂組合物,其中相對於上述感光 性樹脂組合物全體之量,含有20〜9〇質量%之上述(A)成 分、1〜75質量%之上述(B)成分,而且含有卜乃質量%之 上述(C)成分。 &quot;月求項1之感光性樹脂組合物,其進而含有(D)塑化 劑。 5·如明求項1之感光性樹脂組合物,其含有以下述通式(I) 表丁之化合物之丨,2_萘醌二疊氮磺酸酯作為上述(B)成 分: [化1]201001066 VII. Patent Application Range 1. A photosensitive resin composition containing (8) an alkali-soluble phenol resin, (B) a sensitizer containing 1,2-naphthoquinonediazide, and (c) The base chain has an alkali-soluble resin derived from a group derived from an aromatic hydroxy compound. The photosensitive resin composition of claim 1, wherein the component (c) is a test resin containing a basic ethylene as a copolymerization component. 3. The photosensitive resin composition of claim 1, wherein the amount of the above-mentioned (A) component and 1 to 75 mass% of the above-mentioned (B) is contained in an amount of 20 to 9% by mass based on the total amount of the photosensitive resin composition. The component and the component (C) of the above-mentioned mass%. &quot;The photosensitive resin composition of the item 1 of the present invention further contains (D) a plasticizer. 5. The photosensitive resin composition according to claim 1, which comprises a compound of the formula (I), a 2-naphthoquinonediazidesulfonate as the component (B): ] 139313.doc 201001066 基或經基’ R7及Rs分別獨立為氫、鹵素或C1〜C4之烷 基,而且R9〜R&quot;分別獨立為氫或C1〜C4之烷基卜 6_如請求項4之感光性樹脂組合物,其中上述(〇)成分為由 選自雙酚A、雙酚E、雙酚F及雙酚s、以及將該等氫化而 獲得之化合物所組成之群中的至少一種化合物所衍生, 並且末端具有至少1個羥基之化合物。 7· 一種感光性樹脂積層體,其至少包含支持體、及由如請 求項1至6中任—項之感光性樹脂組合物所形成之感光性 樹脂層。 •π Μ Μ δ月 一種光阻捲筒,其 製成捲筒狀者。 9·-種光阻圖案之形成方法,其依序包括:將如請求項7 之感光性樹脂積層體的感光性樹脂層積層於基板上之積 層步驟、對感光性樹脂層進行曝光之曝光步驟' 及將感 光之感光性樹脂層去除之顯影步驟。 求項9之光阻圖案之形成方法,其中於上述曝光步 驟中進行直接繪圖而曝光。 印刷電路板之製造方法,其進而包括:對藉由如請 9或1〇之方法而形成有 鍵敷之步驟。 圖案之基板進仃触刻或 I2. 一種導線架之製造方法,其 10之方+ &amp;, ,、匕括.對精由如請求項9或 1 υ之方法而形成有光阻圖案 ^ 13 之基板進订關之步驟。 •種丰導體圖案之製造方法,並迨而Α &amp; 求項9或〗〇之方法而形忐 八 匕.對藉由如請 成有光阻圖案之基板進行钱刻或 I39313.doc 201001066 鑛敷之步驟。 Μ. -種薄膜電晶體之製造方法,其包括:對藉由如請求項 9或1〇之方法而形成有光阻圖案之基板進行蝕刻或鍍敷 之步驟。 15. -種感光性m合物,其係含有(A)驗溶㈣樹脂, (B)含1,2-萘酿二疊氮基之感光劑’及⑼選自雙盼a、雙 酉分E、雙酿F及雙_、以及將該等氫化而獲得之化合物 所組成之群中的至少_種化合物所衍生並且末端具有至 少1個羥基之化合物而成者。 16. 如請求項15之感光性樹脂組合物,纟中上⑽)成分為選 自以下述通式(νπ)所表示之化合物、及對其進行氯化所 得之化合物所組成之群中的至少—種化合物: [化2]139313.doc 201001066 The base or the radical 'R7 and Rs are each independently hydrogen, halogen or C1~C4 alkyl, and R9~R&quot; are independently hydrogen or C1~C4 alkyl 6_ as in claim 4 The photosensitive resin composition, wherein the (〇) component is at least one compound selected from the group consisting of bisphenol A, bisphenol E, bisphenol F, bisphenol s, and a compound obtained by hydrogenating the same A compound derived and having at least one hydroxyl group at the end. A photosensitive resin laminate comprising at least a support and a photosensitive resin layer formed of the photosensitive resin composition according to any one of claims 1 to 6. • π Μ δ δ Month A photoresist roll that is made into a roll. A method for forming a photoresist pattern, comprising: a step of laminating a photosensitive resin layer of the photosensitive resin laminate according to claim 7 on a substrate; and an exposure step of exposing the photosensitive resin layer ' and a developing step of removing the photosensitive photosensitive resin layer. A method of forming a photoresist pattern of claim 9, wherein direct drawing is performed in the exposure step to expose. A method of manufacturing a printed circuit board, which further comprises the step of forming a bond by a method such as 9 or 1 . The substrate of the pattern is engraved or I2. A method for manufacturing a lead frame, the method of which is 10, +, and, and includes a photoresist pattern formed by the method of claim 9 or 1 . The substrate is ordered to be closed. • The method of manufacturing a variety of conductor patterns, and 忐 amp &; 求 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 9 The steps to apply. A method of producing a thin film transistor, comprising the step of etching or plating a substrate on which a photoresist pattern is formed by the method of claim 9 or 1. 15. A photosensitive m compound comprising (A) a solution (4) resin, (B) a sensitizer containing a 1,2-naphthalene diazide group, and (9) selected from the group consisting of E, a double brew F and a double _, and a compound derived from at least one of the compounds consisting of the compounds obtained by the hydrogenation and having at least one hydroxyl group at the terminal. 16. The photosensitive resin composition of claim 15, wherein the upper (10) component is at least one selected from the group consisting of a compound represented by the following formula (νπ) and a compound obtained by chlorinating the compound. a compound: [Chemical 2] {式中,Υ丨為伸乙基,γ2Α他 2為伸丙基,Y3為碳數4〜6之伸 烷基,Y4&amp;Y5分別獨立為鐵 4原子或者甲基’ p、q及r為〇 以上之整數,其合計為1〜2 π ., ^ ’、、、σ構右邊及/或左邊所含之 氧化伸乙基、氧化伸丙基、 及石反數4〜6之氧化伸烧基之 重複單元可無規地加入,亦π &amp; 1 、 耶可作為嵌段而加入}。 17.如請求項15之感光性樹脂. 柯加、、且合物,其含有20〜90質量%之 上述(A)成分、1〜75質量。/ * 0之上述(B)成分,而且含有 1〜75質量%之上述(D)成分。 139313.doc 201001066 18. 如請求項1 5之感光性樹脂組合物,其含有以下述通式⑴ 所表不之化合物之醌二疊氮磺酸酯作為上述(B)成分: [化3]In the formula, Υ丨 is an ethyl group, γ2 Α2 is a propyl group, Y3 is an alkyl group having a carbon number of 4 to 6, and Y4&amp;Y5 is independently an iron 4 atom or a methyl group 'p, q, and r are整数 The above integers, the total of which is 1~2 π ., ^ ',, σ, the right and/or left of the oxidized ethyl, oxidized propyl, and the inverse of the stone 4~6 The repeating unit of the radical can be added randomly, and π &amp; 1 , yoke can be added as a block}. 17. The photosensitive resin according to claim 15, which is contained in an amount of from 20 to 90% by mass of the above component (A) and from 1 to 75 mass. / * 0 of the above component (B), and contains 1 to 75% by mass of the above (D) component. 139313.doc 201001066 18. The photosensitive resin composition of claim 15, which contains the quinonediazide sulfonate of the compound represented by the following general formula (1) as the above (B) component: [Chem. 3] {式中R! R6刀別獨立為氯、齒素、C1〜C4之烧基、稀 基或羥基R7及Rs分別獨立為氫、齒素或c 1〜C4之烷 基,而且R9〜R&quot;分別獨立為氳或C1〜C4之烷基卜 19. 20. 21. 22. -種感光性樹脂積層體,其至少包含支持體、及由如請 求項1 5至1 8中任-項之感光性樹脂組合物所形成之感光 性樹脂層。 一種光阻捲筒,其係將如請求項18或19之感光性樹脂積 層體製成捲筒狀者。 ' 一種光阻圖案之形成方法,其依序包括:將如請求項^ 之感光性樹脂積層體的感光性樹脂層積層於基板上之積 層步驟、對感光性樹脂層進行曝光之曝光步驟、及將: 光之感光性樹脂層去除之顯影步驟。 :名 如請求項21之光阻圖案之形成方法,其中於上述曝光步 139313.doc 201001066 驟中進行直接繪圖而曝光。 23. 種印刷電路板之製造方法,其進而包括··對藉由如請 求項21或2 2之方法而形成有光阻圖案之基板進行钮刻或 敷之步驟。 24. -種導線架之製造方法,其包括:對藉由如請求項㈣ 22之方法而形成有光阻圖案之基板進行餘刻之步驟。 25. —種半導體圖案之萝 、k方法,其包括:對藉由如請求 21或22之方法而形士、士 ☆ ^ 乂 光阻圖案之基板進行蝕刻或鍍敷 之步驟。 又乱 26. —種薄膜電晶體之匍、生 21或22之方法而:法,其包括:對藉由如請求項 之步驟。 Μ有光阻圖案之基板進料刻或錢數 139313.doc 201001066 四、指定代表圖: (一) 本案指定代表圖為:(無) (二) 本代表圖之元件符號簡單說明: 五、本案若有化學式時,請揭示最能顯示發明特徵的化學式:{where R! R6 knife is independently chlorine, dentate, C1~C4 alkyl, dilute or hydroxyl R7 and Rs are each independently hydrogen, dentate or c 1~C4 alkyl, and R9~R&quot; Separately, it is an alkyl group of 氲 or C1 to C4. 19. 20. 21. 22. A photosensitive resin laminate comprising at least a support and sensitization by any one of claims 15 to 18. A photosensitive resin layer formed of a resin composition. A resist roll which is formed into a roll shape as in the photosensitive resin laminate of claim 18 or 19. a method for forming a photoresist pattern, comprising: a step of laminating a photosensitive resin layer of a photosensitive resin laminate according to claim 1 on a substrate; an exposure step of exposing the photosensitive resin layer; A development step of removing the photosensitive resin layer of light. The method of forming the photoresist pattern of claim 21, wherein direct exposure is performed in the exposure step 139313.doc 201001066. A method of manufacturing a printed circuit board, which further comprises the step of stamping or applying a substrate on which a photoresist pattern is formed by the method of claim 21 or 22. 24. A method of manufacturing a lead frame, comprising: a step of making a residual of a substrate having a photoresist pattern formed by the method of claim (4) 22. 25. A method of semiconductor patterning, k, comprising the step of etching or plating a substrate of a resist pattern of a shape of a light or a photoresist according to the method of claim 21 or 22. And a method of thin film transistor, method 21 or 22, and method comprising: pairing by the steps as claimed. Substrate with photoresist pattern feed or money 139313.doc 201001066 IV. Designated representative map: (1) The representative representative of the case is: (none) If there is a chemical formula, please reveal the chemical formula that best shows the characteristics of the invention: Rg--Ri〇Rg--Ri〇 139313.doc139313.doc
TW98111861A 2008-04-10 2009-04-09 A photosensitive resin composition and a photosensitive resin laminate using the same TWI398725B (en)

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TWI685515B (en) * 2016-12-20 2020-02-21 日商旭化成股份有限公司 2-layer photosensitive layer reel
CN110275391A (en) * 2018-03-14 2019-09-24 东友精细化工有限公司 Photosensitive polymer combination and the pattern forming method for using it

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