TW201000614A - Aqueous dispersion for chemical mechanical polishing, kit for preparing the aqueous dispersion for chemical mechanical polishing, and method of chemical mechanical polishing - Google Patents

Abstract

An aqueous dispersion for chemical mechanical polishing is provided which contains (A) a compound represented by general formula (1), (B) a surfactant comprising at least one member selected from alkylbenzenesulfonic acids, alkylnaphthalenesulfonic acids, a-olefinsulfonic acids, and salts of these, (C) abrasive grains, and (D) an amino acid.

Description

201000614 VI. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a chemical mechanical honing water system, a chemical mechanical honing water dispersion, and a stone mechanical honing water dispersion. Honing method. [Prior Art] In recent years, there have been various display devices due to electro-optical display device technology. Such display devices are not shown (LCD: Liquid Crystal Dispaly), (PDP: Plasma Display Panel), electrochromic ECD (E1 ectroc hr omic Display), electroluminescence ELD (Electro Luminescent Display), electric field device (FED: A flat panel device or the like is generally configured by holding a liquid crystal or the like between a pair of substrates and applying a voltage to the display material. On the substrate, it is necessary to arrange an electric panel display made of a conductive material. If the large area and display of the display are realized, the driving frequency will be increased and the electric wiring capacitance will be increased. Since the effect causes a delay in the driving signal, the same problem occurs in the semiconductor device, causing a signal delay to become a big problem. Therefore, in order to solve the above signal delay, each is performed. For example, JP-A-2002-3 5 3222 attempts to modulate the use of the chemical machine to provide a display device (for example, a liquid crystal display device) (light-emitting device (injection display panel display) At least one of the display materials is wired. The high-precision resistance and parasitics of these flats are a big problem. Due to the development of the multilayer wiring technology: the former wiring material 201000614, the α-saturated, Molybdenum is used in the wiring material to reduce the drive signal delay by using a copper having a lower resistance than the metal. In order to achieve a higher definition of the display, the wiring structure that is ultra-fine and integrated in the wiring will become However, when a wiring material such as copper or a copper alloy is disposed on the substrate, it is only a dry film formation method such as a conventional sputtering method, a vapor deposition method, or a CVD method, or a wet deposition method such as an electroless plating method or a thermal decomposition method. In the film formation method, there is a limit to the wiring structure to form an ultrafine and high-integration. As a technique for forming such a wiring structure, Chemical Mechanical Polishing The technique called the damascene method has been attracting attention. This method is to remove the remaining wiring material by chemical mechanical honing to form a desired wiring after embedding the wiring material in a groove or the like formed on the substrate. [Problems to be Solved by the Invention] However, the maximum size of a substrate (hereinafter referred to as a "substrate for a semiconductor device") used in the manufacture of a conventional semiconductor device is about 50 to 300 mm, and electro-optical display is used. The maximum size of the substrate used in the manufacture of the device (hereinafter referred to as "substrate for electro-optical display device") is as large as about 1 500 to 300 mm, so chemical mechanical honing is used. At the time of the problem, a new problem arises due to the difference in the size of the substrate. Specifically, the amount of honing per unit time (hereinafter also referred to as "honing speed") has a problem that uniformity cannot be maintained. When this problem occurs, -6-201000614 is removed from the surface of the surface, and the amount of material removed is messy, and flatness cannot be obtained. In the case of the substrate for semiconductor devices, it was honed. The area is not the extent of damage to the in-plane flatness, and will not be a significant problem in the allowable range of quality control. However, the area of the honed surface is larger than that of the semiconductor device substrate. In the case of a substrate for an electro-optical display device, the uniformity of the honing speed cannot be maintained, which is a problem that cannot be ignored. In recent years, the semiconductor device substrate has been improved in size, and it is required to be finer. A chemical mechanical honing technique that achieves flattening with higher precision. The chemical mechanical honing method is used to fill the target substrate with a chemical mechanical honing water-based dispersion between the honing target substrate and the honing pad. In this method, as the size of the substrate to be honed becomes larger, the amount of the chemical mechanical honing water-based dispersion in the surface of the substrate becomes uneven. Therefore, it becomes considered that the above problem can be caused by the inability to ensure the uniformity of the honing speed. If the same amount of chemical mechanical honing water-based dispersion is supplied per unit area in the surface of the substrate, theoretically, according to the distance from the center of rotation to the outer circumference, it is necessary to chemically honing the water-based dispersion twice. The ratio of square (equivalent to area) increases supply. Therefore, it is technically difficult to supply a chemical mechanical honing water-based dispersion between the honing target substrate and the honing pad as described above. Further, when chemical mechanical honing is performed on the substrate for an electro-optical display device, it is required to honing at an equal honing speed for different materials. For example, when a copper wiring is formed in a concave portion of a glass substrate, there is a case where the glass honing speed is different from the 201000614 copper honing speed, and the honing surface of the copper wiring is concave, which is called a dishing. Phenomenon, or a phenomenon called etching due to dissolution of glass. These phenomena occur in the case of a substrate for a semiconductor device, and similarly occur in a substrate for an electro-optical display device. However, it is required to suppress the chemical mechanical honing water-based dispersion. On the other hand, when honing a large-area substrate such as a substrate for an electro-optical display device, the amount of power distribution to be removed by chemical mechanical honing is large. Therefore, it is necessary for such a substrate to sufficiently increase the honing speed in order to perform a high-processing chemical mechanical honing process. As described above, in the performance of the chemical mechanical honing water-based dispersion for honing the substrate for an electro-optical display device, it is required to improve not only the flatness of the surface to be honed but also to suppress the dent, and also to increase the honing speed. . The present invention has been made to solve the above problems, and an object of the invention is to provide a method for chemically honing a wiring layer made of copper or a copper alloy to ensure a large honing speed and a honing speed. A chemical mechanical honing water-based dispersion having uniformity and flatness in the in-plane of the honed surface, and which is difficult to cause defects such as dents, and a set for dispersing the chemical mechanical honing water-based dispersion, thereby providing use The chemical mechanical honing method for chemical mechanical honing of aqueous dispersions. [Means for Solving the Problem] The present invention relates to a chemical mechanical honing aqueous dispersion characterized by comprising: (A) a compound represented by the following formula (1), -8- 201000614 (B) selected from the group consisting of At least one surfactant of alkylbenzenesulfonic acid, alkylnaphthalenesulfonic acid, alpha-olefinsulfonic acid, and the like, (C) honing particles, (D) amino acid;

(1) (In the above formula (1), R1 and R2 each independently represent a hydrogen atom, a metal atom or a substituted or unsubstituted alkyl group; and R3 represents a substituted or unsubstituted alkenyl group or a sulfonic acid group ( -S〇3X), but X represents a hydrogen ion, an ammonium ion or a metal ion). In the chemical mechanical honing aqueous dispersion of the present invention, the (B) surfactant may be at least one selected from the group consisting of alkylbenzenesulfonic acid, potassium alkylbenzenesulfonate and alkylbenzene ammonium phosphate. The alkyl group of the agent is a substituted or unsubstituted group having 10 to 20 carbon atoms. In the chemical mechanical honing aqueous dispersion of the present invention, the (B) surfactant may be selected from the group consisting of dodecylbenzenesulfonic acid, potassium dodecylbenzenesulfonate and ammonium dodecylbenzenesulfonate. At least one. In the chemical mechanical honing water-based dispersion of the present invention, the (C) honing particles may be at least one selected from the group consisting of cerium oxide and organic-inorganic composite particles. -9-201000614 The chemical mechanical honing water-based dispersion of the present invention In addition, it may further contain (E) an oxidizing agent. In the chemical mechanical honing aqueous dispersion of the present invention, the (E) oxidizing agent may be hydrogen peroxide. In the chemical mechanical honing aqueous dispersion of the present invention, it may further contain (F) acid ammonium salt. In the chemical mechanical honing aqueous dispersion of the present invention, the ammonium (F) acid salt may be ammonium amide ammonium sulfate. In the chemical mechanical honing water-based dispersion of the present invention, the chemical mechanical honing water-based dispersion system is used for honing a wiring layer made of copper or a copper alloy provided on a substrate for an electro-optical display device. The chemical mechanical honing method of the present invention is a wiring layer made of copper or a copper alloy provided on a substrate for an electro-optical display device by using the chemical mechanical honing aqueous dispersion described above. The chemical mechanical honing water-based dispersion preparation kit for modulating a chemical mechanical honing water-based dispersion composed of a first composition and a second composition, wherein the first The composition contains: (A) a compound represented by the following formula (1), (B) a surfactant, (C) honing particles, (D) an amino acid; and the second composition contains (E) an oxidizing agent; -10- 201000614 [Chemical 2]

(In the above formula (1), the Ri metal atom or the substituted or unsubstituted alkenyl group or the sulfonic acid group and the r2 group each independently represent a hydrogen atom, a substituted alkyl group; and R3 represents a substituted or (-S) group. 〇3X), but X represents a hydrogen ion, an ammonium ion or a metal ion. In the chemical mechanical honing water-based dispersion preparation kit of the present invention, the first composition further contains (F) an acid ammonium salt.

The chemical mechanical honing water-based dispersion preparation kit for modulating a chemical mechanical honing water-based dispersion composed of a third composition and a fourth composition, wherein the third The composition contains (C) honing particles; the fourth composition contains (D) an amino acid; at least one of the third composition and the fourth composition contains (A) represented by the following formula (1) a compound (B) surfactant; at least one of the third composition and the fourth composition contains (E) an oxidizing agent; -11 - 201000614 [Chemical 3]

(In the above formula (1), R1 and R2 each independently represent a hydrogen atom, a metal atom or a substituted or unsubstituted alkyl group; and R3 represents a substituted or unsubstituted stilbene or acid-expanding group (_S〇3X) ), but X means hydrogen ion, recorded ion or metal ion). In the chemical mechanical honing water-based dispersion preparation kit of the present invention, at least one of the third composition and the fourth composition further contains (F) an acid ammonium salt. The chemical mechanical honing water-based dispersion preparation kit for modulating a chemical mechanical honing water-based dispersion composed of a fifth composition, a sixth composition and a seventh composition Wherein the fifth composition contains (E) an oxidizing agent; the sixth composition contains (C) honing particles; the seventh composition contains (D) an amino acid; and the fifth composition, the sixth At least one of the composition and the seventh composition contains (A) a compound represented by the following formula (1) and (B) a surfactant: -12- 201000614 [Chemical 4]

OR1 (In the above formula (丨), RI and r2 each independently represent a genus atom or a substituted or unsubstituted alkyl group; r3 represents a substituted alkenyl group or a sulfonic acid group (_S〇3X), but χ represents an ion Or metal ions). In the chemical mechanical honing water-based dispersion preparation of the present invention, the fifth composition, the sixth composition, and the at least one of the above-mentioned at least one further contain (F) an acid ammonium salt. The chemical mechanical honing aqueous dispersion of the present invention comprises the step of mixing the chemical mechanical honing aqueous dispersion to prepare a composition. [Effect of the Invention] According to the above-described chemical mechanical honing water-based dispersion, a wiring layer made of a copper alloy can be uniformly and smoothly honed on the substrate for an electro-optical coin device having a honing surface of 1500 to 3000 mm. Further, according to the above chemical mechanical dispersion, the depression of the surface to be honed can be suppressed. As described above, 'based on a hydrogen atom, a gold substituted or a non-hydrogen ion, a watch set, and a method for producing a seven-component composition, the entire size of each pair of substrates is set by copper or honing water. Chemical Machine-13- 201000614 The mechanical honing water dispersion is used to honing the wiring layer at high speed. As a result, it is possible to easily provide an ultrafine and highly integrated wiring structure on, for example, a substrate for an electro-optical display device or a substrate for a semiconductor device. Further, according to the above chemical mechanical honing method, since the above-described chemical mechanical honing water-based dispersion is used, for example, a large area and a high definition of a flat panel display can be achieved. According to the above-mentioned chemical mechanical honing water-based dispersion preparation kit, a good chemical mechanical honing water-based dispersion can be obtained even after long-term storage. Namely, the storage stability of the chemical mechanical honing water dispersion can be improved by the above-described chemical mechanical honing water dispersion preparation package. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail. The present invention is not limited to the following embodiments, and various modifications may be made without departing from the spirit and scope of the invention. (1) Chemical mechanical honing water-based dispersion The chemical mechanical honing water-based dispersion of the present embodiment contains (A) a compound represented by the following formula (1), and (B) an alkylbenzenesulfonic acid or an alkyl group. At least one surfactant of naphthalenesulfonic acid, α-olefin sulfonic acid, and the like, (C) honing abrasive, (D) amino acid; -14- 201000614 [Chemical 5]

(In the above formula (1), Ri and R2 each independently represent a hydrogen bond, a metal atom or a substituted or unsubstituted alkyl group; and R3 represents a substituted or unsubstituted storage group or a sulfonic acid group (_s〇3X). ), but x means hydrogen ion, money ion or metal ion). Hereinafter, each component contained in the chemical mechanical honing water-based dispersion of the present embodiment will be described in detail. Further, in the following, each of the compounds (A) to (F) may be omitted as the components (A) to (F). 1.1. (A) A compound represented by the formula (1) The chemical mechanical honing water-based dispersion of the present embodiment contains (A) a compound represented by the formula (1). (A) One of the functions of the compound represented by the formula (〇 is exemplified by adsorbing the compound on the copper surface to ensure that the surface of the copper is protected from excessive contact or rot. Thus, a smooth quilt can be obtained. In the compound represented by the formula (1), when R is a hydrogen atom, a metal atom or a substituted or unsubstituted R 2 alkyl group, the alkyl group having a carbon number of 1 to R 2 is preferably independently substituted. And the substituted or unsubstituted alkane-15-201000614 base is more preferable. Further, when R1 and R2 are a metal atom, it is preferably an alkali metal atom, and preferably sodium or potassium. In the compound represented by R3, R3 represents a substituted alkenyl group or a sulfonic acid group (_S〇3X). However, X represents a hydrogen ion, a mirror ion or a metal ion. When R3 is an alkenyl group, it is preferably It is a terminally substituted or unsubstituted alkenyl group having 2 to 8 carbon atoms. When R3 is a sulfonic acid group (-SAX), hydrazine is preferably a hydrogen ion, a sodium ion, a potassium ion or a money ion. (Α) The compound represented by the formula (丨) is adsorbed on the surface of the copper film and protects the surface of the copper film, thereby preventing excessive honing of the copper. Specific examples of the compound represented by the formula (1) are exemplified by the formula (i) wherein R3 has a sulfonic acid group (_S〇3X) under the trade name "UNICOL 291_ Μ" (obtained from Nippon Emulsifier Co., Ltd.), R3 has a sulfonic acid group (-S03X) under the trade name "UNICOL 292-PG" (available from Nippon Emulsifier Co., Ltd.) and a product name "LATEMURU ASK" with an alkenyl succinate dipotassium (Self-Flower Co., Ltd.) (available in the formula), wherein R3 has a sulfonic acid group (_S〇3X), the trade name "PELLEX TA" (obtained from Kao Co., Ltd.), etc., and the chemical mechanical honing water dispersion of the present embodiment (A) In the case of honing the wiring layer provided on the substrate for an electro-optical display device, the amount of the component to be added is preferably 0. 0005 to 1 mass% with respect to the mass of the chemical mechanical honing water-based dispersion at the time of use. It is preferably 001. 5% to 5% by mass, preferably 0.01 to 0.2% by mass. Further, 'on the time of arranging the wiring layer on the semiconductor substrate', it is preferably 0·00005~〇.2% by mass. 0.000 1~0.1% by mass 'best is 0·0003~0.05 When the amount of the component (Α -16- 201000614) is less than the above range, corrosion or over-etching is not possible, and when the amount exceeds the above range, sufficient honing speed cannot be obtained. The optimum grinding speed differs between the substrates, and it is necessary to change the concentration according to the concentration. 1·2· (Β) surfactant The chemical mechanical honing month surfactant in this embodiment. (Β) One of the functional functions of the grinding water Is the viscosity of the dispersion. That is, the chemical viscosity can be controlled by the addition amount of the (Β) component. The mechanical mechanical honing water dispersion is mechanically honed. The honing performance of the aqueous dispersion is the chemical mechanical machine of the embodiment. The retanning agent is preferably a salt of an anionic terminal benzenesulfonic acid, an alkylnaphthalenesulfonic acid or an α-olefin. The alkylbenzenesulfonic acid is preferably a salt of a dodecylsulfonic acid, more preferably an ammonium salt, a potassium salt or a sodium salt. The amount of the surfactant is, for example, ammonium dodecylbenzenesulfonate and ten compared to the chemical mechanical oxime of the present embodiment. The amount of the surfactant is preferably 0.01 to 0.5% by mass based on the mass of the aqueous dispersion. It is best to 〇.〇2~〇. The protection of the copper surface is weakened and will smooth the surface. The protection of the other copper surface is too strong, and the substrate and the substrate for the optical display device are adjusted for the protective strength due to the required enthalpy. 3 Water-based dispersion containing (Β) is controlled by giving a chemical mechanical 硏 mechanical honing water dispersion. Therefore, as long as the viscosity can be controlled, the surfactant (and more preferably a sulfonic acid such as an alkanesulfonic acid, and the like, and the alkylbenzenesulfonic acid) used in the chemical aqueous dispersion can be controlled. Preferably, the sulfonate is potassium dialkylbenzenesulfonate. The honing aqueous dispersion (using chemical mechanical honing at the time of use is 005 to 1% by mass, more preferably 15% by mass. When the interface activity is -17- 201000614 When the amount of the agent is less than the above range, the chemical mechanical honing water system is too low in viscosity, so that the pressure of the honing pad cannot be effectively and uniformly transmitted to the honed surface. The reason why the honing performance of the chemical mechanical honing water dispersion is messy in the honed surface. Moreover, the chemical mechanical honing water dispersion will self-honor between the substrate and the honing pad before the effective action The outflow, in particular, is the cause of the uneven presence of the chemical mechanical honing water dispersion outside the honed surface. On the other hand, when the amount of the surfactant added exceeds the above range, it corresponds to the addition. Flatness improvement effect Passivation, not only can not obtain the flatness improvement effect' and the honing speed is reduced, the viscosity of the chemical mechanical honing water-based dispersion is excessively increased, and the honing friction heat rises and the in-plane uniformity deteriorates 1-3. (C) Honing granules The chemical mechanical honing water-based dispersion of the present embodiment contains (C) honing particles. (C) The honing particles are exemplified by at least one selected from the group consisting of inorganic particles, organic particles, and organic-inorganic composite particles. Examples of the inorganic particles are silica sand, oxidized crystal, titanium oxide, zirconium oxide, cerium oxide, etc. The organic particles are exemplified by polychloroethylene, polystyrene and styrene copolymer, polyacetal, saturated polyester. Polyolefin, polycarbonate, polyethylene, polypropylene, poly-1-butene, poly-4-methyl-1-pentene and other polyolefins and olefin copolymers, phenoxy resin, polymethacrylic acid A (meth)acrylic resin such as a methyl ester or an acrylic copolymer, etc. The organic-inorganic composite particles may be composed of the above-described organic particles and inorganic particles. -18- 201000614 These are chemical mechanical honing of the present embodiment. Water The honing particles used in the dispersion are preferably selected from at least one of cerium oxide and organic-inorganic composite particles. The cerium oxide used in the chemical mechanical honing water-based dispersion of the present embodiment is exemplified by A sol-synthesized cerium oxide synthesized by a fuming method of reacting cerium chloride, aluminum chloride, titanium chloride or the like with oxygen and hydrogen, and a sol-formed cerium oxide synthesized by hydrolysis and condensation of a metal alkoxide, by purification A colloidal cerium oxide or the like synthesized by an inorganic colloid method such as an impurity removal method, etc. Among these, the best colloidal cerium oxide synthesized by an inorganic colloid method such as purification and removal of impurities is used to ensure the flatness of the honed surface. In view of the above, the colloidal cerium oxide having an average particle diameter of 1 〇〇 nm or less can be preferably used. The organic-inorganic composite particles used in the chemical mechanical honing water-based dispersion of the present embodiment are as long as the above-mentioned organic particles and inorganic particles The integral form is not so easy to separate at the time of the chemical mechanical honing step, and the type, configuration, and the like are not particularly limited. As the organic-inorganic composite particles, for example, polymer particles obtained by polycondensing an alkoxysilane, an alkane oxide, a titanium alkoxide or the like in the presence of polymer particles such as polystyrene or polymethyl methacrylate can be used. At least the surface is bonded with polyoxane or the like. Further, the resulting polycondensate may be directly bonded to a functional group of the polymer particles, or may be bonded via a decane coupling agent or the like. Further, alkoxysilane may be substituted with cerium oxide particles, alumina particles or the like. These may also be complexed with polysiloxane or the like, or may be chemically bonded to the polymer particles by functional groups such as hydroxyl groups. Further, the organic-inorganic composite particles used in the chemical mechanical honing water-based dispersion of the present embodiment, -19-201000614, are exemplified by an aqueous dispersion containing r-organic particles and inorganic particles having different signs, and by electrostatic force. Combiner. The zeta potential of the organic particles is mostly negative in a wide range of fields excluding the region of the whole pH region, but by having organic particles such as a carboxylic acid group, it is possible to have more positively negative ruthenium motor particles. Further, by having organic particles such as an amine group, it is possible to have positive (potential organic particles) in the pH region. The other inorganic particles have high zeta potential and pH dependency, and have equipotential points of the potential. The sign of the zeta potential is opposite. However, the organic particles and the inorganic particles are mixed under the pH region of the zeta potential, so that the organic particle particles can be integrated into one body by electrostatic force. The zeta potential is a phase, and the pH can be changed later so that the potential is reversed so that the organic particles and the inorganic particles are integrated. Further, as the organic-inorganic composite particles, the particles which are integrated by electrostatic force may be integrated. Then, the above-mentioned alkylene, alkane alumina, titanium alkoxide or the like is subjected to polycondensation, and a composite of polysiloxane or the like is bonded to the surface of the fine particles. The chemical mechanical honing of the present embodiment. The average particle diameter of the organic inorganic composite particles in the aqueous dispersion is preferably from 50 to 500 nm. If the thickness is less than 50 nm, the sufficient honing speed cannot be exhibited. At 0 nm, particle agglomeration or sedimentation is likely to occur. The average particle size of the particles can be measured by a laser scattering diffraction type measuring machine, and the cumulative particle diameter of each particle and the number of the particles are observed by a transmission electron microscope. In the specific aspect, the pH base and the extension are in the same way, and the symmetry is the same as the symbol of the wet machine, and the average particle size is used by the oxy sand. Moreover, the honing is calculated by 20-201000614. The amount of (C) honing abrasive used in the chemical mechanical honing water-based dispersion of the present embodiment is preferably 0.01 with respect to the mass of the chemical mechanical honing water-based dispersion at the time of use. ～10% by mass, more preferably 0.02% by mass to 5% by mass. If the amount of the honing agent is not within the above range, sufficient honing speed may not be obtained, and it may take a long time until the honing is completed. On the other hand, if the amount of the honing agent added exceeds the above range, there is a case where the cost becomes high and a stable chemical mechanical honing water-based dispersion is not obtained. 1.4. (D) Amino acid Chemical mechanical honing of the present embodiment Water system The dispersion contains (D) an amino acid. One of the functions of the (D) amino acid is to increase the honing speed when using a chemical mechanical honing aqueous dispersion in honing of a substrate for an electro-optical display device or a semiconductor substrate. The (D) amino acid particularly promotes the honing speed of the wiring material composed of copper or a copper alloy. The (D) amino acid used in the chemical mechanical honing aqueous dispersion of the present embodiment is preferably It is an amino acid having an affinity for ions composed of wiring material elements or for a surface of a wiring material, and more preferably an amine group having an chelating coordination ability for ions composed of wiring material elements or for wiring material surfaces. The acid, specifically, examples include glycine, alanine, aspartic acid, glutamic acid, lysine, arginine, aromatic amino acid, heterocyclic amino acid, and the like. In the case of the (D) amino acid used in the present embodiment, the effect of the honing speed is increased, and the amino acid is preferably a glycine-21 - 201000614 acid. (D) The amount of the amino acid to be added to the chemical mechanical honing aqueous dispersion of the present embodiment is preferably 〇. 5 to 5 by mass relative to the mass of the chemical mechanical honing aqueous dispersion at the time of use. % is more preferably 0.1 to 4% by mass, most preferably 0.2 to 3% by mass. (D) If the amount of the amino acid added is less than the above range, sufficient honing speed may not be obtained, and it may take a long time until the end of the honing. On the other hand, when the amount of the (D) amino acid added is outside the above range, the chemical etching effect is increased, and the flatness of the honed surface is impaired. 1.5. (E) Oxidant The chemical mechanical honing aqueous dispersion of the present embodiment may be added with an (E) oxidizing agent as needed. (E) One of the functions of the oxidizing agent is exemplified in that the honing speed can be increased when a chemical mechanical honing aqueous dispersion is used for honing the substrate for an electro-optical display device or the semiconductor substrate. The reason is that (E) an oxidizing agent oxidizes the surface of the copper film, and by promoting a misalignment reaction with a chemical mechanical honing water-based dispersion component, a weakly modified layer is formed on the surface of the copper film to cause a copper film. It is easier to ponder. The (E) oxidizing agent used in the chemical mechanical honing water-based dispersion of the present embodiment may, for example, be an organic peroxide such as hydrogen peroxide, peracetic acid, perbenzoic acid or t-butyl hydroperoxide; permanganic acid; a permanganic acid compound such as potassium; a dichromic acid compound such as potassium dichromate; a halogen acid compound such as potassium iodate; a nitric acid compound such as nitric acid or iron nitrate; a perhalic acid compound such as perchloric acid; Wait for persulfate; and heteropolyacids. Among these agents, the oxidized -22-201000614 is preferably an organic peroxide such as hydrogen peroxide which is harmless to decomposition products, or a persulfate such as ammonium persulfate, preferably hydrogen peroxide. (E) The amount of the oxidizing agent added to the chemical mechanical honing water-based dispersion of the present embodiment is preferably 5 to 5 mass% based on the mass of the chemical mechanical honing water-based dispersion at the time of use. More preferably, it is 1 to 3 mass%, preferably 0.05 to 1 mass%. (Ε) If the amount of the oxidizing agent is not within the above range, sufficient chemical puncturing effect cannot be obtained, and sufficient honing speed may not be obtained, and it may take a long time until the end of honing. On the other hand, if the amount of the (Ε) oxidizing agent added is outside the above range, there is a case where the rot is honed. 1-6. (F) Acid ammonium salt The chemical mechanical honing water-based dispersion of the present embodiment may be added with (F) an acid ammonium salt as needed. (F) One of the functions of the ammonium salt is exemplified in that the honing speed can be increased when a chemical mechanical honing aqueous dispersion is used for honing the substrate for an electro-optical display device or the semiconductor substrate. The (F) acid ammonium salt used in the chemical mechanical honing aqueous dispersion of the present embodiment is, for example, ammonium sulfate, ammonium chloride, ammonium nitrate or ammonium organic acid. As the organic acid ammonium, for example, ammonium amide ammonium sulfate, ammonium formate, ammonium acetate, ammonium propionate, ammonium butyrate, ammonium lactate, ammonium succinate, ammonium malonate, ammonium maleate, ammonium fumarate, quinal Ammonium citrate, ammonium quinolate, and the like. Among these, ammonium guanamine sulfate is preferred. Further, when the compound of at least one of the (Α) component and the (Β) component is an acid ammonium salt, it is preferred that the component (F) is an acid ammonium salt different from the compound. -23- 201000614 The amount of addition of the (F) acid ammonium salt to the chemical mechanical honing water-based dispersion of the present embodiment is preferably 0.05 with respect to the mass of the chemical mechanical honing water-based dispersion at the time of use. 〜5% by mass, more preferably 0.1 to 3% by mass, most preferably 0.2 to 2% by mass. (F) If the amount of the acid salt is not within the above range, the effect of improving the honing speed cannot be obtained. On the other hand, if the amount of the (F) acid ammonium salt added exceeds the above range, the flatness of the honed surface may be impaired. 1. Other Additives In addition to the above components, the chemical mechanical honing water-based dispersion of the present embodiment may be added with various additives as needed. The chemical mechanical honing aqueous dispersion of the present embodiment can improve the dispersion stability of the honing particles by adding an organic acid or an inorganic acid. The organic acid is exemplified by a compound having a hetero ring such as formic acid, acetic acid, oxalic acid, malonic acid, succinic acid, benzoic acid or succinic acid or quinic acid. Examples of the inorganic acid' include nitric acid, sulfuric acid, phosphoric acid, and the like. Among these, it is preferable that the organic acid hydrazine of the chemical mechanical honing aqueous dispersion of the present embodiment can be adjusted to a desired pH by adding the above acid or base. The base may, for example, be a hydroxide of an alkali metal such as sodium hydroxide, potassium hydroxide, cesium hydroxide or oxyhydrazine, or ammonia or the like. The honing speed can be controlled by adjusting the pH of the chemical mechanical honing water dispersion. An element for investigating the electrochemical properties of the honed surface or the dispersion stability of the honing particles may be added to the pH by adding a suitable acid or base. Among these, ammonia is optimal in terms of increasing the speed of honing. -24- 201000614 2 - A set for dissolving a chemical mechanical honing water dispersion The above chemical mechanical honing aqueous dispersion can be supplied as a honing composition immediately after preparation. Alternatively, the honing composition (that is, the concentrated honing composition) containing the components of the chemical mechanical honing water-based dispersion at a high concentration may be prepared each time, and the concentrated honing composition may be used at the time of use. Dilution to obtain the desired chemical mechanical honing water dispersion. Further, a plurality of compositions (e.g., two or three constituents) each containing the above components may be prepared as described below, and these may be mixed and used at the time of use. In this case, after mixing the plurality of solutions to prepare the chemical mechanical honing aqueous dispersion, the mixture is supplied to the chemical mechanical honing device, and the plurality of solutions may be separately supplied to the chemical mechanical honing device to modulate the chemical mechanical device on the pressure plate. Honing water dispersion. The above chemical mechanical honing aqueous dispersion can be prepared by mixing a plurality of solutions using the first to third sets shown below. 2 · 1. First set The first set of sets allows the first composition to be mixed with the second composition to obtain a set of the above-described chemical mechanical honing water dispersion. In the first set, the first composition is an aqueous dispersion containing (A) a compound represented by the above formula (1), (B) a surfactant, (C) honing particles, and (D) an amino acid. The second composition described above is an aqueous solution containing (E) an oxidizing agent. Further, (F) an acid ammonium salt may be added to the first composition. Further, the components (a) to (F) are the same as those described in "1. Chemical mechanical honing water dispersion - 25 - 201000614". And modulating the aqueous dispersion obtained by mixing the first composition and the second composition of the first set of the first composition and the second composition so that the respective components are contained within the concentration range, a composition And the concentration of each component contained in the second composition. Further, the components of the composition and the second composition may be contained in a high concentration (i.e., concentrated), and in this case, the first composition and the second composition may be obtained by dilution at the time of use. According to the first set, the first composition and the composition are previously divided, and in particular, (E) oxygen storage stability contained in the second composition can be improved. The above-mentioned chemical mechanical honing water component is prepared by using the first set, as long as it is separately prepared to supply the first composition and the second composition, and the mixing method is not particularly limited, and the modulation is performed at a high concentration. The first composition containing the respective components and the second group are diluted with the first composition and the second composition at the time of use, and the chemical mechanical honing water having the concentration of each component is mixed within the above range. Specifically, when the first composition and the second composition are mixed at a ratio of 1:1, the concentrated first composition and the second composition having a concentration twice higher than each component of the chemical mechanical honing water component actually used are prepared. Further, the first composition and the second composition having a concentration of two or more times may be prepared, and after mixing the ratios of 1:1 by weight, each component is in a water thin range. When the first set is used, the above chemical mechanical aqueous dispersion may be prepared during honing. For example, when the first composition and the second composition are used, it is necessary to determine the first group or the dispersion of the second grouping agent. For example, the composition, the combination, and the dispersion weight ratio can be the same as the dispersion. The composition is released into the upper honing mixing adjustment -26 - 201000614 After the above chemical mechanical honing water dispersion is supplied to the chemical mechanical honing device, or the chemical mechanical honing device may be separately supplied with the first composition And the second composition is mixed on a platen. Alternatively, the first composition and the second composition may be supplied to the chemical mechanical honing device separately, and mixed in the line in the apparatus or a mixing tank may be provided in the chemical mechanical honing apparatus, and may be mixed in the mixing tank. Further, in the case of mixing in a line, an in-line mixer or the like may be used in order to obtain a more uniform aqueous dispersion. 2.2. The second set of sets The younger set of the two sets of compositions and the fourth composition are mixed to prepare the above-mentioned chemical mechanical honing water dispersion. In the second set, the third composition is an aqueous dispersion containing (C) honing particles, and the fourth composition is an aqueous solution containing (D) amino acid. Further, at least one of the third composition and the fourth composition contains (A) a compound represented by the above formula (1) and (B) a surfactant. Further, at least one of the third composition and the fourth composition contains (E) an oxidizing agent. Further, the (F) ammonium salt may be contained in at least one of the above third composition and fourth composition. Further, the components (A) to (F) are the same as those described in "1. Water-based dispersion for chemical mechanical honing". When the third composition and the fourth composition constituting the second set are prepared, in the aqueous dispersion obtained by mixing the third composition and the fourth composition, it is necessary to contain the above components in the above concentration range. In a manner, the concentration of each component contained in the third composition and the fourth composition is determined. Further, the components of the third composition and the fourth composition may also be contained in a high concentration (that is, may be -27-201000614 concentrator), in which case the third composition and the fourth composition may be diluted at the time of use. . According to the second set of 'pre-divided into the third composition and the fourth composition', in particular, the preservation stability of the (C) honing particles contained in the third composition can be improved. When the above-mentioned chemical mechanical honing water-based dispersion is prepared by using the second set, 'as long as it is prepared to supply the third composition and the fourth composition individually and integrated in the honing process, the mixing method is not particularly limited. . For example, 'the third composition and the fourth composition containing the respective components at a high concentration are prepared, and the third composition and the fourth composition are diluted at the time of use, and the third composition and the fourth composition are mixed to prepare a chemical machine having a concentration of each component within the above range. Honing water dispersion. Specifically, when the third composition and the fourth composition are mixed at a weight ratio of 1··1, the concentrated third composition having a concentration of each component of the chemical mechanical honing water-based dispersion which is actually used is twice as high. And the fourth composition can be. Further, the third composition and the fourth composition having a concentration of two or more times may be prepared, and after mixing in a weight ratio of 1:1, each component is diluted with water to the above range. When the second set is used, the above-mentioned aqueous dispersion for chemical mechanical honing may be prepared at the time of honing. For example, the third composition and the fourth composition are mixed to prepare the chemical mechanical honing water dispersion, and then supplied to the chemical mechanical honing device, or the chemical mechanical honing device may be separately supplied with the third composition and The fourth composition was mixed on a platen. Alternatively, the third composition and the fourth composition may be supplied to the chemical mechanical honing device separately, mixed in the line in the apparatus, or provided in the chemical mechanical honing device, and mixed in the mixing tank. Further, in the case of mixing in a line, an in-line mixer or the like may be used in order to obtain a more uniform aqueous dispersion of -28-201000614. 2.3. The third set of sets The third set of sets allows the fifth composition, the sixth composition and the seventh composition to be mixed to prepare a set of the above-mentioned chemical mechanical honing water dispersion. In the third set, the fifth composition is an aqueous solution containing (E) an oxidizing agent, and the sixth composition is an aqueous dispersion containing (C) honing particles, and the seventh composition contains (D) an amine group. An aqueous solution of acid. Further, at least one selected from the group consisting of the fifth composition, the sixth composition, and the seventh composition contains (A) a compound represented by the above formula (1) and (B) a surfactant. Further, (F) an acid ammonium salt may be added to at least one selected from the above fifth to seventh compositions. Further, the components (A) to (F) are the same as those described in "1. Chemical mechanical honing water dispersion". When the fifth composition to the seventh composition constituting the third set are prepared, in the aqueous dispersion obtained by mixing the fifth composition to the seventh composition, it is necessary to contain the above components in the above concentration range. In a manner, the concentration of each component contained in the fifth composition to the seventh composition is determined. Further, the components of the fifth composition to the seventh composition may also be contained in a high concentration (i.e., may be an concentrator), and in this case, the fifth composition to the seventh composition may be diluted at the time of use. According to the third set, the fifth composition to the seventh composition are preliminarily divided, and the (E) oxidant contained in the fifth composition and the (C) 硏 abrasive grain contained in the sixth composition are improved. Stability. When the aqueous dispersion of -29-201000614 for chemical mechanical honing is prepared by using the third set of the present embodiment, the mixing method may be integrated as long as it is prepared to supply the fifth composition to the object and is integrated during honing. Timely machine restrictions. For example, a fifth group seventh composition containing each component in a high concentration is prepared, and the fifth composition to the seventh composition are diluted at the time of use to prepare a chemical machine-based dispersion in which the concentration of each component is within the above range. Specifically, when the fifth composition is mixed with the 1:1 weight ratio of the seventh group, the concentration of each component of the chemical aqueous dispersion which is actually used is three times higher than the concentrated fifth composition seven composition. can. Further, the first to seventh compositions having a concentration of three times or more may be prepared, and the components are mixed in a weight ratio of 1:1:1 by water to the above range. When the third set is used, the above chemical mechanical aqueous dispersion may be prepared during honing. For example, after the fifth composition to the seventh composition are made into the chemical mechanical honing water dispersion, the mechanical composition may be supplied to the mechanical honing device, or the chemical mechanical honing device may be divided into five components to the table seven. The composition was mixed on a platen. Alternatively, the chemical mechanical honing device may be supplied to the seventh component to the seventh component device to be mixed in the line or provided in the chemical mechanical honing device to be mixed in the mixing tank. Further, when mixing in a line, an aqueous mixer or the like may be used. 3. Chemical mechanical honing method and substrate electro-optical display device method Chemical mechanical grinding step 'With the different honing objects, the seventh group can be smashed into objects. After the honing of the material to the fifth composition, the honing is adjusted to the chemical supply or the mixture, and the appropriate chemical mechanical honing water dispersion is selected for the purpose of -30-201000614. . The chemical mechanical honing step in the method for producing a substrate for an electro-optical display device of the present embodiment is mainly divided into a first-stage step of honing the wiring layer and a second-stage step of honing the barrier metal film. The chemical mechanical honing water-based dispersion of the present embodiment is particularly useful for the first-stage step of honing a wiring layer composed of copper or a copper alloy. The chemical mechanical honing method of the present embodiment and the method of manufacturing the substrate for an electro-optical display device will be specifically described using the drawings. Fig. 1 to Fig. 5 are cross-sectional views showing a substrate for an electro-optical display device showing the chemical mechanical honing step of the embodiment. As the substrate used in the method for producing a substrate for an electro-optical display device of the present embodiment, for example, a glass substrate, a film substrate or a plastic substrate can be used. The size of the substrate can be, for example, a diagonal size of 1 500 mm to 3 000 mm. The substrate may be a single layer body fluid or a laminate in which an insulating film of ruthenium dioxide or the like is formed on the substrate. First, as shown in FIG. 1, for example, a glass substrate 1 is prepared. The glass substrate 10 has a wiring recess 1 2 for forming wiring. A method of forming the wiring recess 1 2 on the glass substrate 10 is a dry etching method. The dry etching method is a method of irradiating a glass substrate with physical processing of accelerated ions, and can precisely control the irradiation beam to perform fine pattern processing. The glass substrate I is made of a material such as soda lime glass, borosilicate glass, aluminosilicate glass, or quartz glass. Next, as shown in Fig. 2, the barrier metal film 20 is formed so as to cover the bottom surface of the glass substrate 1 and the bottom and inner wall surfaces of the recess 12 for wiring. Barrier -31 - 201000614

The wall metal film 20 is made of, for example, a material such as molybdenum or tantalum nitride. As a method of forming a barrier metal film 20, a chemical vapor deposition method (CVD) is used. Next, as shown in Fig. 3, a metal for wiring is deposited to cover the surface of the barrier metal film 20 to form a metal film 30. The metal film 30 may be composed of copper or a copper alloy. As the film forming method of the metal film 30, a physical vapor phase growth method (PVD) such as sputtering or vacuum deposition can be used. Next, as shown in Fig. 4, the remaining metal film 3 other than the portion in which the wiring recess portion 1 is buried is chemically honed and removed by using the chemical mechanical honing water-based dispersion of the present embodiment. Furthermore, the above method is repeated until the barrier metal film 20 is exposed. After chemical mechanical honing, it is preferred to remove the honing particles remaining on the surface to be honed. The removal of the honing particles can be carried out by a usual washing method. Finally, as shown in Fig. 5, the surface of the barrier metal film 20 and the glass substrate 1 other than the wiring recess 1 2 are chemically honed and removed by using the chemical mechanical honing aqueous dispersion for the barrier metal film. In the chemical mechanical honing method described above, since the chemical film honing water-based dispersion of the present embodiment is used to remove the metal film 3 〇, the honing speed is large, the flatness in the surface of the honing is good, and it is difficult to cause dents or the like. Honing the defect. Therefore, according to the present method, a substrate or a semiconductor substrate for an electro-optical display device having a wiring metal and having a high degree of refinement and excellent in-plane flatness can be produced with a high throughput. 4-Embodiment - 32 - 201000614 The present invention is illustrated by the following examples, but the present invention is not limited by the examples. 4.1. Evaluation substrate 4.1.1. Flatness (depression) evaluation The surface of the substrate used in the glass substrate having a width of 300 Å, which is formed by a depth of 3//m. ί 3 Onm thickness is formed by a barrier metal film made of arsenic, and the thickness of the test is deposited by sputtering copper on the barrier metal film and in the recess. Hereinafter, the substrate thus obtained is referred to as "substrate a". 4.1.2. Substrate for evaluation of in-plane uniformity On the surface of a glass substrate having a diagonal size of 2000 mm, a barrier metal film made of molybdenum nitride was formed into a film. Subsequently, the barrier metal film was sputtered with copper and deposited to a thickness of 6/zm. The following \ · ' The substrate obtained is "substrate b". 4.1.3. Evaluation substrate for honing speed • A ruthenium substrate (hereinafter referred to as "substrate c") which is self-occupied with a film of a film thickness of 15,000 angstroms at a thickness of 1 Å. • A thermal insulation substrate (hereinafter referred to as "substrate d") is attached to a 8 inch layer of a molybdenum film having a film thickness of 2,000 Å. 4.1 · 4 · Evaluation of flatness (depression, etching) Substrate This is the implementation of m. Then, 'I 6 β m 3 Onm is determined by the ratio of the honing speed of the copper film calculated by the above substrates C and d to the PETEOS film by the thermal oxidation film-33-201000614, and the chemical mechanical machine can be confirmed. The basic honing characteristics of the honing of the semiconductor substrate of the aqueous dispersion. However, chemical mechanical honing of a patterned wafer in which a trench of a wiring pattern is formed is known to have a local excessive honing position. The reason for this is that the surface of the pattern wafer before the chemical mechanical honing is reflected on the surface of the wiring pattern to cause irregularities on the surface of the metal film, and the chemical mechanical honing is locally applied according to the pattern density. Pressure, and accelerate the honing speed of the part. Therefore, simulating a semiconductor substrate to honing a patterned wafer, since it is necessary to evaluate the honing speed or etching, the substrate of the drawing type is used (a nitride film of 1,000 Å is deposited on the ruthenium substrate, sequentially on it) Laminating a low dielectric constant insulating film (black diamond film) of 4,500 angstroms, and then laminating a PETEOS film of 500 angstroms, and then performing a "SEMATECH 854" reticle pattern processing, sequentially laminating 25 angstroms thereon. The test was carried out by using a giant film, a copper seed film of 1 000 angstroms, and a test substrate made of a copper coating of 10,000 angstroms, hereinafter referred to as "substrate e". 4.2. Modulation of aqueous dispersions containing inorganic honing particles or honing particles composed of composite particles 4.2.1. Preparation of aqueous dispersions containing inorganic cerium particles (a) Water dispersion containing cerium oxide particles The body was prepared by dispersing 2 kg of smoked cerium oxide particles (manufactured by AEROSIL Co., Ltd., trade name "AEROSIL #90") using an ultrasonic disperser in 6.7 kg of ion-exchanged water. The filter was filtered to prepare an aqueous dispersion containing fumed cerium oxide. (b) An aqueous dispersion containing colloidal cerium oxide a was prepared by injecting 70 g of a 25 mass% aqueous ammonia, 40 g of ion-exchanged water, 175 g of ethanol, and 21 g of tetraethoxydecane in a flask having a capacity of 2000 cm3. The temperature was raised to 60 ° C with stirring at 180 rpm. After stirring at 60 ° C for about 2 hours, it was cooled to obtain a colloidal cerium oxide/ethanol dispersion having an average particle diameter of 7 Onm. Next, the alcohol component was removed by adding ion-exchanged water to the dispersion at 80 ° C by a rotary evaporator, and the operation was repeated several times to remove the alcohol in the dispersion to prepare a water having a solid content concentration of 8 mass%. Dispersion (c) Preparation of aqueous dispersion containing colloidal cerium oxide b Water glass No. 3 (cerium dioxide concentration: 24% by mass) was diluted with water to obtain a dilute sodium citrate aqueous solution having a cerium oxide concentration of 3.0% by mass. The diluted sodium citrate aqueous solution was passed through a hydrogen-type cation exchange resin layer to remove a large amount of sodium ions, which became a pH 3.1 active citric acid aqueous solution. Subsequently, the pH was adjusted to 7.2 by adding a 10% by mass aqueous sodium hydroxide solution under stirring. Heating was continued until boiling and hot for 3 hours. To the obtained aqueous solution, a small amount of the active citric acid aqueous solution adjusted to 10 times the amount of p Η 7.2 was added in a small amount for 6 hours to grow the average particle diameter of the cerium oxide particles to 26 nm. -35- 201000614 Next, concentrated under reduced pressure (boiling point 78 °C) aqueous dispersion containing the above-mentioned silica sand 'obtained sulfur dioxide concentration. 3 2 _0 mass % ' average particle size of cerium oxide · 26 nm, pH : 9.8 cerium oxide particle dispersion. After the cerium oxide dispersion was again passed through the hydrogen-type cation exchange resin layer to remove most of the sodium, a 10% by mass aqueous potassium hydroxide solution was added to obtain a cerium oxide particle concentration: 28·〇 mass% 'PH: I0 .0 cerium oxide particle dispersion. 4.2.2. Preparation of aqueous dispersion containing honing particles composed of composite particles (d) Preparation of aqueous dispersion containing polymer particles 90 parts by mass of methyl methacrylate and 5 parts by mass of methoxy group Polyethylene glycol methacrylate (manufactured by Shin-Nakamura Chemical Co., Ltd., trade name "NK ESTERM-90G", #400), 5 parts by mass of 4-vinylpyridine, and 2 parts by mass of azo-based polymerization The starting agent (trade name "V50" manufactured by Wako Pure Chemical Co., Ltd.) and 400 parts by mass of ion-exchanged water were injected into a flask having a capacity of 2000 cm3. The temperature was raised to 70 ° C under stirring in a nitrogen atmosphere, and polymerization was carried out for 6 hours. Thus, an aqueous dispersion of polymethyl methacrylate-based particles having an average particle diameter of a functional group having an amine group and a polyethylene glycol chain was obtained. Further, the polymerization yield was 95%. (e) Preparation of an aqueous dispersion containing composite particles 100 parts by mass of polymethyl methacrylate obtained by containing 10% by mass of the above-mentioned "(d) preparation of an aqueous dispersion containing -36-201000614 polymer particles" The aqueous dispersion of the oxime ester-based particles was poured into a flask having a capacity of 2000 cm3, and the mass of the solution was methyltrimethoxy chopped, and stirred at 40 ° C. 2/] Subsequently, ρ Η was adjusted to 2 with nitric acid to obtain water. Dispersion (f). The aqueous dispersion (g) was obtained by adjusting the pH of the water dispersion of 10% by mass of colloidal cerium oxide (manufactured by Nissan Co., Ltd., trade name "SNOWTEX Ο" to 8 ' by potassium hydroxide. Water dispersion (f) The zeta potential of the medium polymethyl methacrylate particles was +1 7 mV, and the zeta potential of the cerium oxide particles contained in the water dispersion g) was -40 mV. Subsequently, 3 parts by mass of the aqueous dispersion (g) was slowly added to the aqueous dispersion (f) in 1 part, mixed and stirred for 2 hours to obtain adhesion on the polymethyl methacrylate-containing particles. An aqueous system of cerium oxide particles. Next, 2 parts of vinyltriethoxysilane was added to the aqueous dispersion for 1 hour, and then 1 part by mass of tetraethoxysilane was added to the temperature to 60 ° C. After stirring for 3 hours, the content was obtained by cooling. Aqueous dispersion of particles (e). The composite particles had an average particle diameter of 1 ' and 80% of the surface of the polymethyl methacrylate particles adhered to the ruthenium particles. 4.3_Chemical mechanical honing water-based dispersion preparation Injecting an aqueous dispersion preparation prepared in the above-mentioned "4.2. Preparation of an aqueous dispersion containing inorganic honing abrasive particles or a composite honing abrasive" In a polyethylene bottle having a capacity of 1 〇〇〇cm3, each of the (A)-form acid groups added in Tables 1 to 2 was added. In addition, the body of the stock body (f 50 mass is dispersed in the oxy group, the composite is 80 nm oxidized particles in each, the compound of (1) -37- 201000614, (D) amino acid and (F) The ammonium salt is sufficiently stirred. The compounds of the formula (1) described in Tables 1 to 2 are respectively used as the surfactant of the formula (1) wherein R3 has a group represented by -S03X (product) "UNICOL 29 1-M" manufactured by Nippon Emulsifier Co., Ltd.) As a compound (A), a surfactant of the formula (1) wherein R3 has a group represented by -S03X (trade name "UNICOL 292-" PG "Made Emulsifier Co., Ltd.", as a compound (B), a surfactant (trade name "LATEMURU ASK" Kao Co., Ltd.) as a compound (C), and a pass-through using a surfactant of dipotassium alkenyl succinate In the formula (1), R3 has a surfactant represented by -S03X (trade name "PEL LEX TA" manufactured by Kao Co., Ltd.) as a compound (butyl). Further, (D) amino acid is used as a compound. Any of aminic acid, alanine, and aspartic acid (F) ammonium salt of ammonium amide ammonium sulfonate is used, followed by stirring, so that (B) surfactant and (E) oxidant are added to the contents described in Tables 1 to 2, respectively, and Tables 1 to 2 are added. The aqueous solution of (B) surfactant and (E) oxidizing agent is used. The (B) surfactant used herein is dodecylbenzenesulfonic acid, potassium dodecylbenzenesulfonate and dodecylbenzenesulfonate. Any one of ammonium amide and (E) oxidizing agent is any one of hydrogen peroxide and ammonium persulfate. Further, after sufficiently stirring, pH is adjusted with potassium hydroxide aqueous solution or ammonia, and then ion-exchanged water is added to have a pore diameter of 5 / The filter of zm was filtered to obtain the chemical mechanical honing water dispersions of Examples 1 to 8, 12 to 18 'Comparative Examples 1 to 7, and Reference Examples 1 and 2 - 38 - 201000614 4 _ 4. Using the first set Chemical-mechanical honing water-based dispersion adjustment 4 · 4 · 1. Modification of the first composition The above-mentioned "4.2.1. (b) water-dispersed preparation of colloidal cerium oxide a" The aqueous dispersion of cerium oxide is added to a bottle made of polyethylene in an amount equivalent to 6.0% by mass, and is added. 0.24% by mass of dipotassium alkenyl succinate (product: LATEMURU ASK) manufactured by Kao Co., Ltd.), 0.24% of dodecylbenzenesulfonic acid (trade name "NEOPELLEX GS" manufactured by F.)" and in these 2.4% by mass of glycine 3.0% by mass of ammonium amide ammonium sulfate was added in this order, and stirred for 15 minutes. Then, ammonia and potassium hydroxide were added to adjust the pH, and ion-exchanged water was added to make the total amount of the whole component 100 mass. After %, the first composition A1 of the aqueous dispersion was obtained by filtration through a pore size. 4.4_2· Modulation of the second composition The concentration of the hydrogen peroxide was adjusted to a concentration of ion-exchanged water to obtain a second composition B 1 . By the above steps, a set of a modulating chemical mechanical 硏 aqueous dispersion composed of the composition A 1 and the second composition B 1 is produced. 4.4.3. Preparation of Chemical Mechanical Honing Water Dispersion X1 The first composition A 1 and the second composition B 1 were respectively placed in different ethylene containers and tied, and stored at room temperature for 6 months. The dioxygenation of the mixed body is named "Quality Wanggong acid, the amount of the structure filter 5, the first mill for the first mill 6-39- 201000614 months after the storage of Al: 50% by mass and Bl: 8% by mass, Further, the ion exchange water was added to make the total amount of all the constituent components 100% by mass, and the chemical mechanical honing aqueous dispersion XI was prepared. The chemical mechanical honing aqueous dispersion X 1 had the chemical machinery prepared in the above Example 5. The composition and pH of the water-based dispersion were the same. The chemical mechanical honing water dispersion XI was used, and the test was carried out in accordance with the following "4.7. Honing evaluation test". This was designated as Example 9, and the results are shown in Table 1. 4.5. Modification of the second set of chemical mechanical honing water dispersions using a second set of 4.5. 1 · Modulation of the third composition The above "4.2.1. (b) Preparation of an aqueous dispersion containing colloidal cerium oxide a The aqueous dispersion of the colloidal cerium oxide prepared in the middle is added to a bottle made of polyethylene in an amount equivalent to 6.0% by mass in terms of cerium oxide, and 0.24% by mass of dipotassium alkenyl succinate, 0.24 is sequentially added. The mass% of dodecylbenzenesulfonic acid and 35 mass% of the amount of hydrogen peroxide aqueous solution equivalent to 0.8% by mass of hydrogen peroxide were adjusted to "after adjusting the pH with ammonia" and stirred for 15 minutes. Next, ion-exchanged water was added so that the total amount of all the constituent components was 1 〇 〇 mass%, and then filtered by a filter having a pore diameter of 5 μm to obtain a third composition A2 of the aqueous dispersion. 4.5.2 _ Preparation of the fourth composition The amount of glycine acid equivalent to 2.4% by mass and 3.0% by mass of ammonium amide ammonium sulfate were sequentially added to the polyethylene bottle, and ion-exchanged water was added to make all the constituents. After the total amount became 100% by mass, 'stirring for 15 minutes' was filtered with a filter of -40 - 201000614 pore size 5 # m to obtain the B2 of the aqueous dispersion. By the above steps, a group of modulated chemical mechanical honing water-based dispersions composed of the third composition A2 and the substance B2 is produced. 4.5.3. Modification of the chemical mechanical honing water-based dispersion X2 The third composition A2 is prepared. The fourth composition B2 was separately placed in a vinyl container and tied, and stored at room temperature for 6 months. A2 after storage for 50 months and B2: 50% by mass. Mechanical honing water dispersion X2. The chemical mechanical honing powder X2 has the same composition as the chemical mechanical system dispersion prepared in the above Example 5, and has the same pH. The mechanical honing water dispersion X2 was used, and the test was carried out according to the following “4·7. 硏 评 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Dispersion 4 · 6 · 1 · Modulation of the fifth composition The aqueous dispersion containing colloidal cerium oxide prepared in the above "4.2.1 · (b) Preparation of water containing colloidal cerium oxide a" is exchanged.矽 is equivalent to 6.0% by mass of a bottle made of polyethylene, 0.24% by mass of dipotassium alkenyl succinate, and 0.24% by mass of benzenesulfonic acid', followed by addition of ammonia, followed by stirring for 15 minutes. Then, the water is exchanged so that the total amount of all the constituent components becomes 〇〇 〇〇 mass %, and 5 / im of the filter 'filtering' obtains the fifth group of the fourth component of the aqueous dispersion, and the fourth composition is different. The chemical water price test is used in the chemical water price test. The preparation of the dispersion is calculated as dioxane, and dodecyl-added ions are added to the pore size of the substance A3. -41 - 201000614 4.6.2. Preparation of the sixth composition In the polyethylene bottle, the amount of ammonium amide ammonium sulfate equivalent to 4.8% by mass and 6.0% by mass was added in order, and the total amount of components added with ion-exchanged water was 100. After mass%, the filter was stirred for 15 minutes to obtain a sixth group of aqueous dispersions. 4.6.3. Preparation of the seventh composition The concentration of the hydrogen peroxide was adjusted by ion exchange water to obtain the seventh composition. C 3 . By the above steps, the composition A 3 , the sixth composition B 3 and the seventh composition C 3 are prepared to prepare a chemical mechanical honing water-based dispersion. 4.6.4. Preparation of Chemical Mechanical Honing Water Dispersion X3 The fifth composition A 3 , the sixth composition B 3 , and the seventh 糸j are respectively added to different polyethylene containers and tied and placed in the room. 6 months. The chemical mechanical honing object X3 was prepared by mixing A3: 50% by mass and C3: 8% by mass after 6 months of storage, and adding ion-exchanged water to make the total amount of the whole component 100% by mass. The chemical mechanical honing aqueous dispersion X3 had the same pH as the chemical mechanical honing aqueous dispersion prepared in Example 5. The use of this chemical mechanical honing water system is based on the following "4.7 honing evaluation test". Let Example 1 1 and the results are shown in Table 1. The glycine acid is made up to the pore size: B 3 . It is used as the fifth product by the fifth component. The product C 3 is stored at a temperature, and the B3: 25 is composed of a water system to disperse the above-mentioned composition, and (body X3, as an implementation -42- 201000614 4.7. Honing evaluation test 4.7 .1. Evaluation of honing 4.7_la_honing speed of substrate with copper film. Chemical mechanical honing aqueous dispersion using Example 1 to Example 1 1 , Comparative Example 1 to Comparative Example 3 and Reference Example 1. The substrate with the copper film was honed under the following conditions: The evaluation was performed using the above substrate b. • Honing device: Chemical mechanical honing machine for display substrate • Honing pad: urethane foam with groove Material chemical mechanical honing pad • Carrier load: 200gf/cm2 • Carrier head rotation: 60rpm • Number of revolutions: 65 rpm • Grinding agent supply: 150cm3/min • Honing time: 30 seconds So-called display The chemical mechanical honing machine for the substrate is used to convert a conventional chemical mechanical honing device (model "EPO-112" manufactured by Ebara Seisakusho Co., Ltd.) into a display substrate with a chemical mechanical honing diagonal size of 2000 mm. The honing speed is calculated by the following formula (2) Honing speed (nm/min) = (copper film thickness before honing - copper film thickness after honing V honing time... (2) Moreover, the so-called copper film thickness is measured by a resistivity meter (NP) Manufactured by Company S, model "Z-5"), the sheet resistance is measured by the DC 4-pin method -43- 201000614, and the resistivity and the resistivity of copper are calculated according to the following formula (3). (nm) = theoretical resistivity of copper (Ω·cm) + resistance of sheet 値 (Ω) χ 1 07... (3) When the honing speed is 1500 (nm/min) or more, the honing speed is judged to be good. 4.7.1 b. Evaluation of the dents When the honing speed V (nm/min) is honed to deposit the wiring material in the initial film of the thickness T (nm) of the concave portion or the like, 'only τ/V (minutes) The time should be able to achieve the purpose of honing. However, in the actual manufacturing step, in order to remove some of the remaining wiring material other than the recess, excessive honing (over-polishing) exceeding T/V (minutes) is performed. In the case of excessive honing of the wiring portion, it may have a concave shape. Such a concave wiring shape It is called "dishing", which is not good from the viewpoint of a decrease in the yield of finished products. Therefore, in each of the examples, a depression was used as an evaluation item. The evaluation of the depression was performed using a surface roughness meter (KL A TEN C OR The model "P·10" manufactured by the company" was measured by measuring the 30 〇em wiring of the substrate 3. Further, the honing time in the evaluation of the dent was obtained by dividing the initial residual copper film of the thickness τ (nm) by ^4.7. (1) The time (minutes) obtained by multiplying the enthalpy (T/V) (minutes) obtained by the honing speed V (nm/min) in the honing of the substrate with a copper film by 1.5. -44 - 201000614 The recessed item in the evaluation item in Table 1 is described as the depression 値 (# m) by the amount of the copper wiring which is measured by the surface coarse sugar meter. When the depression is less than 1 (//m), the depression is suppressed. 4 · 7.1 c · Evaluation of in-plane uniformity Except that the length direction of the substrate b on which the copper film was formed was 5 mm from both ends, 33 points were equally taken to measure the film thickness of the substrate before and after chemical mechanical honing. From the measurement results, the honing speed and the in-plane uniformity were calculated by the following formulas (4) to (6). Honing amount = film thickness before honing - film thickness after honing... (4) honing speed = Σ (honing amount V honing time... (5) in-plane uniformity = (standard deviation of honing amount) + average of honing amount) X100 (%) (6) When the in-plane uniformity is less than 10%, it is judged that the in-plane uniformity is good -45- 201000614 Reference example • 1 1 〇1 ο rn I t Ο CN Ρ 1 * Comparative example m 0.05 1 1 1 1 〇 (N 1 ρ in d 1 1830 00 15.0 CN 1 1 1 0.02 ! 〇 (N 1 1 ρ (N 1q 1 1630 丨00 vn 12.0 I 1·^ 1 1 1 CN d ρ — 1 1 (N 〇q 710丨0.56 〇00 Example 1 0.12 1 0.12 〇1 (Ν o | 1990 , 0.47 | 〆ο 1 0.12 1 0.12 1 〇rn 1 (Ν inch d | 2080 , 0.56 ι~Η ON 1 0.12 t 0.12 丨Ο rn 1 (Ν inch o | 2010 , 0.58 00 oo 1 1 1 ο — ο in o rsi | 1750 , 0.44 1 00 Bu 0.005 1 1 〇〇〇 0.25 t (Ν 00 do ri | 2850 0.82 〇6 VO 1 0.05 1 r-Ή yr) o 1 ΟΟ 〇| 2640 | 0.61 1 1 0.12 1 0.12 o rn 1 (Ν d *T) 1 2040 j 0.52 inch r- o 1 1 1 0.006 〇1 1 I 00 o 1 2530 \ 0.77 〇m 1 1 1 0.006 0.05 1 OO 〇1 1 o 0.05 Γΐ71〇Π 0.68 〇〇(N 1 1 1 0.05 1 1 Γ^Ι 1 CN op 2050 1 0.49 00 — 1 1 1 CN d 1 p 1 Ο (Ν 1 oo (N 2980 1 0.66 〇〇6 | compound (a) compound (b) compound (c) compound (butyl) 1 dodecylbenzene sulfonic acid fumaric cerium oxide cerium oxide I _ compositing particles I glycine alanine aspartate Acid hydrogen peroxide · Ammonium sulphate ammonium sulphide rate (nm / min) Sag (/ / m) In-plane uniformity (%) (A formula (1) compound (B) surfactant [C) honing particles (D) Amino acid (E) oxidizing agent (F) acid ammonium salt addition amount [% by mass) Evaluation result - 46 - 201000614 4.7. Id. Evaluation results Examples 1 to 8, Comparative Examples 1 to 3, and Reference Example 1 were The chemical mechanical honing water-based dispersion is changed in part or concentration, and the addition amount thereof is shown in Table 1. The chemical mechanical honing water dispersions of Examples 1 to 8 have a relatively high honing speed such as 1 7 10 nm /min or more, and the recess of the 300 μm wiring is as small as 0·82 μm or less, and is uniform in-plane. The sex is 8.6% or less. From the above, it can be judged that the chemical mechanical honing aqueous dispersions of Examples 1 to 8 have a large honing speed and a uniform in-plane in the chemical mechanical honing of the substrate (display substrate) having a large area of the honed surface. Sex, and can suppress depression. In particular, in Example 1, although the honing speed was extremely high as 2980 nm/min', the recess of the 300 μm wiring was as small as 0.77/zm, and the in-plane uniformity was as low as 8.0%, and extremely good results were obtained. Further, almost the same results as in Example 5 were obtained as in Examples 9 to 11 shown in Table 1. That is, it can be understood that even if a water-based dispersion of a chemical mechanical honing set is stored for 6 months at room temperature, it has almost the same performance as that immediately after the preparation. As a result, it is determined that at least the storage stability of each component contained in the chemical mechanical polishing aqueous dispersion stored in the stack can be ensured. On the other hand, in the chemical mechanical honing water-based dispersion of Example 5 which was stored at room temperature for 6 months, the honing of the honed granules was observed, and it was necessary to re-disperse by ultrasonic treatment or the like at the time of use. In Comparative Example 1, the case where the (D) amino acid was not contained, and the honing speed was insufficient, it was difficult to achieve a high throughput when it was used for a large-area substrate such as a substrate for an electro-optical display device. -47- 201000614 Comparative Example 2 is an example in which the compound represented by the chemical formula (1) is not contained in (A), and the honing speed is not bad, but it is not suitable for use in an electro-optical display device because the depression and the in-plane uniformity are too large. Manufacturing of substrates and the like. In Comparative Example 3, the (B) surfactant was not contained, and the honing speed was not bad. However, since the depression and the in-plane uniformity were too large, it was not suitable for the production of a substrate for an electro-optical display device or the like. Reference Example 1 is an example in which the (E) oxidizing agent is not contained, and the honing speed is extremely small, and it is difficult to achieve a high throughput when manufacturing a large-area substrate such as a substrate for an electro-optical display device. Moreover, since the honing speed is too small, it is impossible to evaluate the unevenness and in-plane uniformity. 4.7.2. Mounting of a semiconductor substrate on a chemical mechanical honing device (model "MIRRA-Mesa" manufactured by Applied Materials, Inc.) with a porous polyurethane honing pad (stock number manufactured by Rohm and Haas) In the "IC1010"), the chemical mechanical honing water-based dispersion was supplied, and each of the substrate c, the substrate d, and the substrate e' was subjected to honing treatment for one minute under the following honing conditions, and the honing speed was evaluated by the following method. Flatness and defects. The knots are listed in Table 2. 4.7.2a·Evaluation of honing speed (1) Honing conditions • Number of rotations of the carrier: 70 rpm • Bearing load: 2 0 0 gf / c m2 • Number of revolutions: 7 rpm 48- 201000614 • Chemical mechanical honing The supply amount of the aqueous dispersion: 200 mL/min. In this case, the supply rate of the chemical mechanical honing water-based dispersion is the total amount of the supply amount of all the supply liquid divided by the unit time. (2) Calculation method of honing speed Using an electrically conductive film thickness measuring device (type "OMNIMAP RS75" manufactured by KLA TENCOR Co., Ltd.), the film of each of the substrate C and the substrate d was subjected to honing treatment for the copper film and the ruthenium film. The film thickness is thereafter, and the honing speed is calculated from the film thickness and the honing time which are reduced by chemical mechanical honing. 4.7.2b. Flatness evaluation (1) Honing conditions of the honing process step • The water system dispersion system used in the honing process step uses the examples 12 to 18 and the comparative example 4 to the comparative example 7 and the reference example 2. Chemical mechanical honing water dispersion. • Number of rotations of the carrier head: 70 rpm • Bearing load: 200 gf/cm2 • Number of revolutions: 70 rpm • Supply of chemical mechanical honing water dispersion: 200 mL/min In this case, the supply of chemical mechanical honing water dispersion The speed is the total amount of supply of all feed liquid divided by the time per unit time. • Grinding time: • Remove the copper film from the honed surface and expose the barrier metal film, and then honing it for 3 seconds as the end point of honing. -49- 201000614 (2) Evaluation method of flatness Using a high-resolution profiler (type "HRP240ETCH" manufactured by KLA TENCOR Co., Ltd.), the honed surface of the substrate e after the honing treatment under the above conditions was measured in copper wiring. The width (line width, L) / the width of the insulating film (space, S) are the amount of recess (nm) in the copper wiring portion of 100 # m/100 V m , respectively. The results are shown in Table 2. The amount of the depression is preferably 30 nm or less, more preferably 20 nm or less. The copper wiring width (line width, L) / insulating film width (space, S 3 is 9 / zm / lMm in the pattern, the fine wiring length is ΙΟΟΟμιη continuous part of the measured amount of etching (nm). The results are listed in the table 2. The amount of the immersion is preferably 30 nm or less, more preferably 20 nm or less. 4.7.2 c. Evaluation of corrosion Using a scanning electron microscope (manufactured by Applied Materials, model "SEM Vision G3"), the surrounding portion is observed as an insulating portion. And the width 〇. 1 8 μιη copper wiring is isolated by the barrier metal film. In the table, when the interface between the copper and the barrier metal film is confirmed to have a width of 001 # m or more, it is corroded and recorded as " X"' When there is no gap, or if the width of the interface between the copper and the barrier metal film is confirmed to be less than 〇.〇l/zm, it is not corroded and is marked as "〇". -50- 201000614 Reference Example CN 1 1 0.0005 1 1 0.05 0.25 1 1 1 1 1230 246 1 1 1 Comparative Example 1> 1 1 1 0.0005 ί 1 1 0.05 _____1 0.25 | ___ i 1 1 1 〇CN 1 980 fN 490 ; 1 1 1 Ο 1 1 0.0005 1 1 0.05 1 1 1 〇CN 1 340 — 340 | 1 1 1 κη 1 ( Γο.0005 L. 1 1 1 0.25 1 t 〇1 8400 2100 Ο X inch 1 1 1 • 1 0.05 0.25 1 1 〇 (N 〇〇\ 8000 4000 ο X Example 〇〇t 1 0.001 1 1 0.035 0.20 ] _1 1 0.45 1 OS 00 8900 : 00 1113 Π oo (Ν 〇1 1 0.0005 0.05 1 1 0.50 〇1 (N 〇1 m Os 6300 inch 1575 (Ν <Ν (Ν 〇vg t 1 0.001 1 1 0.05 0.25 inch · 1 1 〇〇 6500 ] (Ν 3250 j 卜CN 〇1 0.0005 1 1 1 1 0.05 0.25 〇1 1 〇CN 〇〇\ VO 1233 〇〇m 〇1 1 0.0005 1_ 1 0.05 1 0.50 卜 I 1 〇(N 〇Os 9500 m 3167 (N 〇r〇1 0.0005 t 0.05 t 1 0.25 1 卜1 〇(N 〇σ\ 7200 fN 3600 〇\ 〇(S 1 1 0.0005 5 1 i 0.25 1 1 〇CN 〇7500 卜1071 <Ν 00 〇丨Compound (A) Antimony Compound (B) 1_ Compound (C) Potassium dodecylbenzenesulfonate dodecylbenzenesulfonate! _1 Ammonium dodecylbenzenesulfonate exposed to cerium oxide glycine acid alanine Hydrogen peroxide persulfate money X Pi s濶φ φ μ m Teng Touch® Huai a ^ Cu/Ta honing speed ratio sag (nm) L/S=100/ 丨00 μ m immersion amount (nm) L/S =9/l/zm .. — ____________i Corrosion 1 (A compound of formula (1) (B) surfactant (C) honing grain (D) amino acid (E) oxidizing agent addition amount (% by mass) Evaluation result 201000614 4.7.2 d. Evaluation result Example 12 ~18, its honing speed for copper film is quite high, such as 7,000 angstroms per minute, and the honing speed of the barrier metal film is quite low, such as less than 1 〇 / min. Therefore, it is understood that the honing selectivity for the copper film is excellent. On the other hand, in Comparative Example 4, since the component (A) was not used, the depression, the etching, and the corrosion were all poor. In Comparative Example 5, since the component (B) was not used, the depression, the etching, and the corrosion were all poor. In Comparative Example 6, since the component (C) was not used, the honing speed was extremely small, and flatness could not be evaluated. In Comparative Example 7, since the component (D) was not used, the honing speed was extremely small, and flatness could not be evaluated. In Reference Example 2, since the component (E) was not used, the honing speed was extremely small, and flatness could not be evaluated. [Brief Description of the Drawings] Fig. 1 is a cross-sectional view showing a part of the steps of a method of manufacturing a substrate for an electro-optical device according to the embodiment. Fig. 2 is a cross-sectional view showing a part of the steps of a method of manufacturing a substrate for an electro-optical device according to the embodiment. Fig. 3 is a cross-sectional view showing a part of the steps of a method of manufacturing a substrate for an electro-optical device according to the embodiment. Fig. 4 is a cross-sectional view showing a part of the steps of a method of manufacturing a substrate for an electro-optical device according to the embodiment. -52-201000614 Fig. 5 is a cross-sectional view showing an example of a substrate for an electro-optical device manufactured by the method for producing a substrate for an electro-optical device according to the embodiment. [Explanation of main component symbols] 1 〇 : Glass substrate 1 2 : Concave recess for wiring 20 : Barrier metal film 3 0 : Metal film -53-

Claims (1)

201000614 VII. Patent application scope: 1. A chemical mechanical honing water dispersion characterized by containing (A) a compound represented by the following formula, (B) being selected from the group consisting of alkylbenzenesulfonic acid and alkylnaphthalenesulfonic acid. , at least one surfactant of α-olefin sulfonic acid and salts thereof, (C) honing particles, (D) amino acid; (In the above formula (1), ... and R2 each independently represent a hydrogen atom, a metal atom or a substituted or unsubstituted alkyl group; and R3 represents a substituted or unsubstituted alkenyl group or a sulfonic acid group (_S〇). 3X), but χ represents a hydrogen ion 'ammonium ion or metal ion'). 2. The chemical mechanical honing aqueous dispersion according to claim 1, wherein the (B) surfactant is selected from the group consisting of potassium alkylbenzenesulfonate and potassium alkylbenzenesulfonate. At least one of the alkyl groups of the aforementioned surfactant is a substituted or unsubstituted alkyl group having a carbon number of 丨〇 to 2〇. π 丨 Ί Ί Ί 丨 丨 丨 丨 丨 ) ) ) ) ) ) ) ) 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面 界面201000614, at least one of potassium dodecylbenzenesulfonate and ammonium dodecylbenzenesulfonate. 4 _ A chemical mechanical honing water dispersion according to claim 1 of the patent application, wherein the aforementioned (C) abrasive particles It is at least one selected from the group consisting of cerium oxide and organic-inorganic composite particles. 5 _ The chemical mechanical honing water-based dispersion according to the first aspect of the patent application, which further contains (E) an oxidizing agent. The chemical mechanical honing water dispersion of the fifth item, wherein the (E) oxidizing agent is hydrogen peroxide. 7. The chemical mechanical honing water-based dispersion according to the first aspect of the patent application, which further contains (F) acid 8. The chemical mechanical polishing aqueous dispersion according to claim 7, wherein the (F) ammonium salt is ammonium amide ammonium sulfate. 9 - The chemical mechanical honing water according to claim 1 a dispersion that is used to honing electro-optics a wiring layer made of copper or a copper alloy provided on a substrate for a display device. 10. A chemical mechanical honing method characterized in that copper or copper is provided for honing on a substrate for an electro-optical display device. A chemical mechanical honing water-based dispersion of the first aspect of the patent application is used for a wiring layer composed of a copper alloy. 1 1 A chemical mechanical honing water-based dispersion-modulating set for modulating a first composition A chemical mechanical honing water-based dispersion comprising a second composition and a second composition, wherein the first composition contains (A) a compound represented by the following formula (1), -55- 201000614 (B) a surfactant, (C) honing particles, (D) amino acid; the second composition containing (E) an oxidizing agent; [Chemical 7] OR1 (In the above formula (1), R1 and R2 each independently represent a hydrogen atom, a metal atom or a substituted or unsubstituted alkyl group; and R3 represents a substituted or unsubstituted substituted or sulfonic acid group (-S) 〇3X), but X means hydrogen ion, money ion or metal ion). 1 2. The chemical mechanical honing water-based dispersion preparation kit according to the first aspect of the invention, wherein the first composition further contains (F) an acid ammonium salt. 13· a chemical mechanical honing water-based dispersion preparation set, which is a set of a chemical mechanical honing water-based dispersion composed of a third composition and a fourth composition, characterized in that The third composition contains (C) honing particles; the fourth composition contains (D) an amino acid; at least one of the third composition and the fourth composition contains (A) represented by the following formula (1) a compound, (B) a surfactant; -56- 201000614 E) an oxidizing agent; At least one of the fourth compositions contains X 1 ), and R 1 and R 2 each independently represent a hydrogen atom, a metal atom or a substituted or unsubstituted alkyl group; and r 3 represents a substituted or unsubstituted alkene. A sulfonic acid group (_s〇3X), but also a hydrogen ion ammonium ion or a metal ion). The chemical mechanical honing water-based dispersion preparation kit according to the third aspect of the invention, wherein at least one of the third composition and the fourth composition further contains (F) an acid ammonium salt. 15. A chemical mechanical honing water-based dispersion preparation kit for modulating a chemical mechanical honing water-based dispersion composed of a fifth composition, a sixth composition, and a seventh composition, The fifth composition contains (E) an oxidizing agent; the sixth composition contains (C) honing particles; the seventh composition contains (D) an amino acid; and is selected from the fifth composition, the aforementioned At least one of the sixth composition and the seventh composition contains (A) a compound represented by the following formula (1), and (B) a surfactant: -57- 201000614 [Chemical 9] (1) In R2, R1 (the above formula (I atom or substituted or R2 each independently represents a nitrogen atom, gold but X represents a hydrogen ion, ammonium is an alkyl group derived from α; R3 represents a substituted or unsubstituted An alkenyl group or a sulfonic acid group (_s〇3X or a metal ion). The chemical mechanical honing water dispersion preparation kit according to the fifteenth aspect of the patent application, wherein the fifth composition is selected from the foregoing Further, at least one of the sixth composition and the seventh composition further contains (F) ammonium sulphate 17. A method for preparing a chemical mechanical honing aqueous dispersion, which is characterized by comprising a mixed application patent range 11 to 16. The chemical mechanical honing water of any one of the items is a step of preparing a dispersion for the dispersion. -58-