KR20110013360A - Aqueous dispersion for chemical mechanical polishing, kit for preparing the aqueous dispersion for chemical mechanical polishing, and method of chemical mechanical polishing - Google Patents

Abstract

The chemical mechanical polishing aqueous dispersion according to the present invention is at least one surfactant selected from (A) a compound represented by the formula (1), (B) alkylbenzenesulfonic acid, alkylnaphthalenesulfonic acid, α-olefinsulfonic acid and salts thereof, (C) abrasive grains, and (D) amino acids.

Description

Aqueous dispersions for chemical mechanical polishing and kits for producing the aqueous dispersions for chemical mechanical polishing, and methods for polishing chemical mechanical polishing MECHANICAL POLISHING}

The present invention relates to a chemical mechanical polishing aqueous dispersion, a kit for producing the chemical mechanical polishing aqueous dispersion, and a chemical mechanical polishing method using the chemical mechanical polishing aqueous dispersion.

Recently, display devices having various structures have been proposed due to the progress of the technology of the electro-optical display device. As such a display device, for example, a liquid crystal display (LCD), a plasma display panel (PDP), an electrochromic display (ECD), an electroluminescent display (ELD: Electro Luminescent) Flat panel displays such as a display, a field emission display material device (FED), and the like. A flat panel display is normally comprised by the method of clamping display materials, such as a liquid crystal, between a pair of board | substrates, and applying a voltage to the display material. At this time, it is necessary to arrange the electrical wiring containing a conductive material in at least one board | substrate. In such a flat panel display, when a large area of the display and a high definition of the display are intended, the driving frequency increases, and the resistance and parasitic capacitance of the electrical wiring increase. This effect is a big problem because of the delay of the drive signal. In addition, the same problem occurs in semiconductor devices, and signal delay due to multilayer wiring becomes a big problem.

Therefore, in order to solve the delay of a signal as mentioned above, various technique development is performed. For example, Japanese Unexamined Patent Application Publication No. 2002-353222 discloses that the wiring material is replaced with aluminum, α-tantalum, and molybdenum, which are smaller in electrical resistance than those metals, and solve the drive signal delay. I'm trying.

In addition, in order to achieve further high precision of the display, ultra-fine and highly integrated wiring structure of the conductive wiring becomes essential. However, when disposing wiring materials such as copper or a copper alloy on a substrate, ultrafine and highly integrated with only dry film formation methods such as conventional sputtering, vapor deposition, and CVD, or wet film formation methods such as electroless plating and thermal decomposition. There is a limit in forming the wiring structure.

As a technique which can form such a wiring structure, the technique called a chemical mechanical polishing technique, what is called a damascene method, attracts attention. This method forms a desired wiring by embedding the wiring material in a groove or the like formed in the substrate and then removing the excess wiring material by chemical mechanical polishing.

However, while the size of a substrate (hereinafter referred to as a "semiconductor device substrate") used in the manufacture of a conventional semiconductor device has a maximum dimension of about 50 to 300 mm, the substrate used in the manufacture of an electro-optic display device ( In the following, `` substrate for electro-optical display device '' may be large in size of about 1500 to 3000 mm, and therefore, a new problem due to the difference in the size of the substrate when using chemical mechanical polishing technology. Is happening. Specifically, there is a problem that, for example, the uniformity in the polished surface of the polishing amount per unit time (hereinafter also referred to as "polishing speed") cannot be maintained. When this problem occurs, the amount of the substance removed in the plane of the surface to be polished fluctuates and flatness is not obtained. In the case of the conventional substrate for semiconductor devices, the area of the surface to be polished is not a size that impairs the in-plane flatness, but falls within an allowable range in quality control and does not become a significant problem. However, when polishing a substrate for an electro-optical display device having a much larger surface area than that of a semiconductor device substrate, the uniformity of polishing rate cannot be maintained.

In addition, in recent years, substrates for semiconductor devices require further refinement in order to improve the degree of integration, and accordingly, there is a demand for a chemical mechanical polishing technique capable of achieving flattening with higher accuracy.

Chemical mechanical polishing is a method of polishing a substrate to be polished by filling an aqueous dispersion for chemical mechanical polishing between a substrate to be polished and a polishing pad. In this method, as the size of the substrate to be polished increases, the amount of the chemical mechanical polishing aqueous dispersion in the substrate surface becomes nonuniform. Therefore, the uniformity of a polishing rate cannot be ensured and it is thought that the said problem arises. In order to supply the same amount of chemical mechanical polishing aqueous dispersion per unit area in the substrate surface, theoretically, the chemical mechanical polishing aqueous dispersion is squared (area equivalent) according to the distance from the rotation center to the outer periphery. It needs to be increased in proportion to the supply. In reality, however, it is technically difficult to supply the chemical mechanical polishing aqueous dispersion between the polishing target substrate and the polishing pad which is pressed under a constant pressure on the polishing pad and rotates.

In the case of chemical mechanical polishing of the substrate for an electro-optical display device, it is also required to polish different materials at the same polishing rate as possible. For example, when copper wiring is formed in the recessed part of a glass substrate, the polishing rate of glass and the polishing rate of copper may differ, and the phenomenon of dishing in which the polishing surface of copper wiring becomes concave, The phenomenon called erosion by melting may occur. Such a phenomenon may occur in a substrate for a semiconductor device, but may also occur in an electro-optical display substrate, and a chemical mechanical polishing aqueous dispersion capable of suppressing this is required.

On the other hand, when polishing a large area substrate such as an electro-optical display substrate, there is a large amount of wiring or the like to be removed by chemical mechanical polishing. Therefore, the polishing rate needs to be sufficiently high in order to perform a chemical mechanical polishing process with a large throughput on such a substrate.

As described above, the performance of the chemical mechanical polishing aqueous dispersion used for polishing the substrate for the electro-optic display device is required not only to increase the flatness of the polished surface, to suppress dishing, but also to increase the polishing rate. have.

SUMMARY OF THE INVENTION The present invention solves the above problems, and its object is to achieve a high polishing rate in the process of chemical mechanical polishing a wiring layer containing copper or a copper alloy, and to ensure in-plane uniformity of polishing rate and in-plane flatness of the surface to be polished. A chemical mechanical polishing aqueous dispersion, a kit for producing the chemical mechanical polishing aqueous dispersion, and a chemical mechanical polishing method using the chemical mechanical polishing aqueous dispersion can be provided. It's there.

Aqueous dispersion for chemical mechanical polishing according to the present invention

(A) a compound represented by the following formula (1),

(B) at least one surfactant selected from alkylbenzenesulfonic acids, alkylnaphthalenesulfonic acids, α-olefinsulfonic acids and salts thereof,

(C) an abrasive grain, and

(D) amino acids.

In Formula 1, R ¹ and R ² each independently represent a hydrogen atom, a metal atom, or a substituted or unsubstituted alkyl group, and R ³ represents a substituted or unsubstituted alkenyl group or sulfonic acid group (-SO ₃ X ) With the proviso that X represents hydrogen ions, ammonium ions or metal ions)

In the aqueous mechanical dispersion for chemical mechanical polishing according to the present invention,

The (B) surfactant is at least one selected from alkylbenzenesulfonic acid, alkylbenzenesulfonic acid potassium and alkylbenzenesulfonic acid ammonium, and the alkyl group of the surfactant may be a substituted or unsubstituted alkyl group having 10 to 20 carbon atoms.

In the aqueous mechanical dispersion for chemical mechanical polishing according to the present invention,

The (B) surfactant may be at least one selected from dodecylbenzenesulfonic acid, potassium dodecylbenzenesulfonic acid and ammonium dodecylbenzenesulfonic acid.

In the aqueous mechanical dispersion for chemical mechanical polishing according to the present invention,

The (C) abrasive grain may be one or more selected from silica and organic inorganic composite particles.

In the aqueous mechanical dispersion for chemical mechanical polishing according to the present invention,

In addition, (E) may include an oxidizing agent.

In the aqueous mechanical dispersion for chemical mechanical polishing according to the present invention,

The (E) oxidant may be hydrogen peroxide.

In the aqueous mechanical dispersion for chemical mechanical polishing according to the present invention,

In addition, (F) ammonium acid salt may be included.

In the aqueous mechanical dispersion for chemical mechanical polishing according to the present invention,

The ammonium acid salt (F) may be ammonium amide sulfate.

In the aqueous mechanical dispersion for chemical mechanical polishing according to the present invention,

This chemical mechanical polishing aqueous dispersion can be used for polishing a wiring layer containing copper or a copper alloy provided on a substrate for an electro-optical display device.

Chemical mechanical polishing method according to the present invention

In order to polish the wiring layer containing copper or a copper alloy provided in the board | substrate for electro-optic display devices, the above-mentioned chemical mechanical polishing aqueous dispersion is used.

The kit for preparing an aqueous dispersion for chemical mechanical polishing according to the present invention

A kit for preparing a chemical mechanical polishing aqueous dispersion composed from a first composition and a second composition,

The first composition is

(A) a compound represented by the following formula (1),

(B) surfactants,

(C) an abrasive grain, and

(D) comprises amino acids,

The second composition comprises (E) an oxidizing agent.

<Formula 1>

In Formula 1, R ¹ and R ² each independently represent a hydrogen atom, a metal atom, or a substituted or unsubstituted alkyl group, and R ³ represents a substituted or unsubstituted alkenyl group or sulfonic acid group (-SO ₃ X ) With the proviso that X represents hydrogen ions, ammonium ions or metal ions)

In the kit for producing an aqueous dispersion for chemical mechanical polishing according to the present invention,

The first composition may further comprise (F) ammonium acid salt.

The kit for preparing an aqueous dispersion for chemical mechanical polishing according to the present invention

A kit for preparing a chemical mechanical polishing aqueous dispersion composed from a third composition and a fourth composition,

The third composition comprises (C) an abrasive,

The fourth composition comprises (D) an amino acid,

At least one of the third composition and the fourth composition

(A) a compound represented by the following formula (1), and

(B) contains a surfactant,

At least one of the said 3rd composition and said 4th composition contains the (E) oxidizing agent.

<Formula 1>

In Formula 1, R ¹ and R ² each independently represent a hydrogen atom, a metal atom, or a substituted or unsubstituted alkyl group, and R ³ represents a substituted or unsubstituted alkenyl group or sulfonic acid group (-SO ₃ X ) With the proviso that X represents hydrogen ions, ammonium ions or metal ions)

In the kit for producing an aqueous dispersion for chemical mechanical polishing according to the present invention,

At least one of the third composition and the fourth composition may further comprise an ammonium acid (F) acid salt.

The kit for preparing an aqueous dispersion for chemical mechanical polishing according to the present invention

A kit for producing a chemical mechanical polishing aqueous dispersion composed from a fifth composition, a sixth composition, and a seventh composition,

The fifth composition comprises (E) an oxidizing agent,

The sixth composition comprises (C) abrasive grains,

The seventh composition comprises (D) an amino acid,

At least one selected from the fifth composition, the sixth composition and the seventh composition is

(A) a compound represented by the following formula (1), and

(B) it contains a surfactant.

<Formula 1>

In Formula 1, R ¹ and R ² each independently represent a hydrogen atom, a metal atom, or a substituted or unsubstituted alkyl group, and R ³ represents a substituted or unsubstituted alkenyl group or sulfonic acid group (-SO ₃ X ) With the proviso that X represents hydrogen ions, ammonium ions or metal ions)

In the kit for producing an aqueous dispersion for chemical mechanical polishing according to the present invention,

In addition, at least one selected from the fifth composition, the sixth composition, and the seventh composition may further include an ammonium acid (F) salt.

The method for producing a chemical mechanical polishing aqueous dispersion according to the present invention includes a step of mixing the respective compositions of the above-described kit for producing a chemical mechanical polishing aqueous dispersion.

According to the chemical mechanical polishing aqueous dispersion, a wiring layer comprising copper or a copper alloy provided on a substrate for an electro-optic display device having a maximum dimension of the surface to be polished of about 1500 to 3000 mm is uniform and flat throughout the substrate. Can be polished Moreover, according to the said chemical mechanical polishing aqueous dispersion, dishing of the to-be-polished surface can be suppressed. In addition, according to the chemical mechanical polishing aqueous dispersion, the wiring layer can be polished at high speed. As a result, for example, an ultrafine and highly integrated wiring structure can be easily provided on the substrate for an electro-optical display device or the substrate for a semiconductor device. Further, according to the chemical mechanical polishing method, since the chemical mechanical polishing aqueous dispersion is used, for example, a large area and high precision of a flat panel display can be achieved.

According to the kit for producing a chemical mechanical polishing aqueous dispersion, a good chemical mechanical polishing aqueous dispersion can be obtained even after long-term storage. That is, according to the kit for producing the chemical mechanical polishing aqueous dispersion, the storage stability of the chemical mechanical polishing aqueous dispersion can be improved.

1: is sectional drawing which shows typically a part of process of the manufacturing method of the board | substrate for electro-optical devices of this embodiment.
FIG. 2: is sectional drawing which shows a part of process of the manufacturing method of the board | substrate for electro-optical devices of this embodiment typically.
FIG. 3: is sectional drawing which shows typically a part of process of the manufacturing method of the board | substrate for electro-optical devices of this embodiment. FIG.
FIG. 4: is sectional drawing which shows typically a part of process of the manufacturing method of the board | substrate for electro-optical devices of this embodiment. FIG.
FIG. 5: is sectional drawing which shows typically the example of the board | substrate for electro-optical devices manufactured by the manufacturing method of the board | substrate for electro-optical devices of this embodiment. FIG.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment which concerns on this invention is described in detail.

In addition, this invention is not limited to the following embodiment, Comprising: Various modified examples implemented in the range which does not change the summary of this invention are included.

1. Aqueous dispersion for chemical mechanical polishing

The chemical mechanical polishing aqueous dispersion according to the present embodiment is at least one interface selected from (A) a compound represented by the following formula (1), (B) alkylbenzenesulfonic acid, alkylnaphthalenesulfonic acid, α-olefinsulfonic acid and salts thereof. Active agents, (C) abrasive grains, and (D) amino acids.

<Formula 1>

In Formula 1, R ¹ and R ² each independently represent a hydrogen atom, a metal atom, or a substituted or unsubstituted alkyl group, and R ³ represents a substituted or unsubstituted alkenyl group or sulfonic acid group (-SO ₃ X ) With the proviso that X represents hydrogen ions, ammonium ions or metal ions)

Hereinafter, each component contained in the chemical mechanical polishing aqueous dispersion which concerns on this embodiment is demonstrated in detail. In addition, each compound of (A)-(F) may be abbreviate | omitted as (A) component-(F) component, respectively, and may be described below.

1.1. (A) the compound represented by formula (1)

The chemical mechanical polishing aqueous dispersion according to the present embodiment contains a compound represented by the formula (A). (A) As one of the functions of the compound represented by General formula (1), the said compound is adsorb | sucked to the copper surface and protects the copper surface from excessive etching or erosion. Thereby, a smooth to-be-polished surface can be obtained.

In the compound represented by the formula (1), each of R ¹ and R ² is preferably a hydrogen atom, a metal atom, or a substituted or unsubstituted alkyl group. When R <^1> and R <^2> is an alkyl group, it is more preferable that it is a C1-C8 substituted or unsubstituted alkyl group. In addition, when R <^1> , R <^2> is a metal atom, it is preferable that it is an alkali metal atom, and it is most preferable that it is sodium or potassium.

In the compound represented by the formula (1), R ³ represents a substituted or unsubstituted alkenyl group or sulfonic acid group (-SO ₃ X). However, X represents hydrogen ion, ammonium ion, or metal ion. When R <^3> is an alkenyl group, it is preferable that it is a C2-C8 substituted or unsubstituted alkenyl group. When R ³ is a sulfonic acid group (-SO ₃ X), it is preferable that X is a hydrogen ion, sodium ion, potassium ion, ammonium ion. Since the compound represented by the formula (A) having such a structure (1) is adsorbed on the surface of the copper film to protect the surface of the copper film, it is possible to prevent the copper from being too polished.

Specific examples of the compound represented by general formula (1) trade name "Newcol 291-M" having a sulfonic acid group (-SO ₃ X) in R ³ in the formula of the formula (1) (available from manufactured by Nippon New kajayi whether or sikki), R ³ in the formula sulfonic acid group (-SO ₃ X), the trade name "Newcol 292-PG" (available from manufactured by Nippon New kajayi whether or sikki) having, alkenylsuccinic acid dipotassium the trade name "Latemul ASK" in (available from manufactured by Kao whether or sikki And the brand name "Ferex TA" (available from Kao Kabushiki Kaisha) having a sulfonic acid group (-SO ₃ X) in R ³ in the chemical formula.

The addition amount of (A) component with respect to the chemical mechanical polishing aqueous dispersion which concerns on this embodiment is preferable with respect to the mass of the chemical mechanical polishing aqueous dispersion at the time of using, when grind | polishing the wiring layer provided in the board | substrate for electro-optic display apparatuses. Preferably it is 0.0005-1 mass%, More preferably, it is 0.001-0.5 mass%, Especially preferably, it is 0.01-0.2 mass%. In addition, when polishing the wiring layer provided in the semiconductor substrate, Preferably it is 0.00005-0.2 mass%, More preferably, it is 0.0001-0.1 mass%, Especially preferably, it is 0.0003-0.05 mass%. If the addition amount of (A) component is less than the said range, protection of a copper surface will become weak, erosion or excessive etching advances and a smooth surface may not be obtained. On the other hand, when the addition amount exceeds the above range, the protection of the copper surface may be too strong, and a sufficient polishing rate may not be obtained. The reason why the optimum concentration differs from the substrate for an electro-optical display device and the semiconductor substrate is that it is necessary to adjust the protection strength by changing the concentration because the required polishing rate is different.

1.2. (B) surfactant

The chemical mechanical polishing aqueous dispersion according to the present embodiment contains the surfactant (B). As one of the functions of the component (B), it is possible to give viscosity to the chemical mechanical polishing aqueous dispersion. That is, the viscosity of the chemical mechanical polishing aqueous dispersion can be controlled by the addition amount of the component (B). If the viscosity of the chemical mechanical polishing aqueous dispersion is controlled, the polishing performance of the chemical mechanical polishing aqueous dispersion can be controlled.

As (B) surfactant used for the chemical mechanical polishing aqueous dispersion which concerns on this embodiment, anionic surfactant is preferable, and sulfonic acids, such as alkylbenzene sulfonic acid, alkyl naphthalene sulfonic acid, and alpha-olefin sulfonic acid, and salts thereof are more preferable. desirable. As alkylbenzene sulfonic acid, dodecylbenzene sulfonic acid is especially preferable. Moreover, as a salt of these sulfonic acids, ammonium salt, potassium salt, and sodium salt are preferable. Preferable specific examples of the alkylbenzene sulfonate include ammonium dodecylbenzenesulfonate and potassium dodecylbenzenesulfonate.

The amount of the (B) surfactant added to the chemical mechanical polishing aqueous dispersion according to the present embodiment is preferably 0.005 to 1 mass%, more preferably relative to the mass of the chemical mechanical polishing aqueous dispersion at the time of use. It is 0.01-0.5 mass%, Especially preferably, it is 0.02-0.15 mass%. If the amount of the surfactant added is less than the above range, since the viscosity of the chemical mechanical polishing aqueous dispersion is too low, the pressure applied to the polishing pad can not be transmitted efficiently and uniformly to the surface to be polished, and the It causes a change in the polishing performance of the chemical mechanical polishing aqueous dispersion. In addition, the chemical mechanical polishing aqueous dispersion flows out between the substrate to be polished and the polishing pad before the effective effect of the chemical mechanical polishing aqueous dispersion, which causes variation in the amount of the chemical mechanical polishing aqueous dispersion in the outer periphery of the surface to be polished. It may become. On the other hand, when the amount of the surfactant added exceeds the above range, the effect of improving the flatness with respect to the amount of addition is slowed, and the effect of improving the flatness is not obtained, and the polishing rate is lowered, or the viscosity of the chemical mechanical polishing aqueous dispersion is reduced. This may become too high, and the abrasive friction heat will rise, and in-plane uniformity may deteriorate.

1.3. (C) abrasive

The chemical mechanical polishing aqueous dispersion according to the present embodiment includes (C) abrasive grains. (C) As an abrasive, 1 or more types chosen from inorganic particle, organic particle | grain, and organic inorganic composite particle | grains are mentioned. Examples of the inorganic particles include silica, alumina, titania, zirconia, ceria, and the like. Examples of the organic particles include polyolefins such as polyvinyl chloride, polystyrene and styrene copolymers, polyacetals, saturated polyesters, polyamides, polycarbonates, polyethylenes, polypropylenes, poly-1-butenes, and poly-4-methyl-1-pentenes. And (meth) acrylic resins such as olefin copolymers, phenoxy resins, and polymethyl methacrylates, and acrylic copolymers. The organic inorganic composite particles may include the above organic particles and the above inorganic particles.

Among these, it is preferable that it is at least 1 sort (s) chosen from a silica and organic inorganic composite particle as an abrasive grain used for the chemical mechanical polishing aqueous dispersion which concerns on this embodiment.

Examples of the silica that can be used for the chemical mechanical polishing aqueous dispersion according to the present embodiment include silica and metal alkoxide synthesized by a fumed method of reacting silicon chloride, aluminum chloride, titanium chloride and the like with oxygen and hydrogen in the gas phase. Silica synthesized by the sol-gel method synthesize | combined by hydrolysis condensation, the colloidal silica synthesize | combined by the inorganic colloidal method etc. which removed the impurity by purification etc. are mentioned. Among them, colloidal silica synthesized by an inorganic colloidal method or the like from which impurities are removed by purification is particularly preferable. The colloidal silica can preferably use an average particle diameter of 100 nm or less from a viewpoint of ensuring the flatness of a to-be-polished surface.

The organic-inorganic composite particles which can be used for the chemical mechanical polishing aqueous dispersion according to the present embodiment should just be integrally formed so that the above-mentioned organic particles and inorganic particles are not easily separated during the chemical mechanical polishing process. The configuration and the like are not particularly limited. As this organic-inorganic composite particle | grain, polycondensation of an alkoxysilane, aluminum alkoxide, titanium alkoxide, etc. in presence of polymer particle, such as polystyrene and polymethylmethacrylate, for example, polysiloxane etc. are carried out on the at least surface of a polymer particle. Combination can be used. In addition, the resulting polycondensate may be directly bonded to the functional group of the polymer particles, or may be bonded via a silane coupling agent or the like. Instead of alkoxysilanes, silica particles, alumina particles, and the like may also be used. These may be entangled with polysiloxane and the like, or may be chemically bonded to the polymer particles by functional groups such as hydroxyl groups they have.

Moreover, as an organic-inorganic composite particle | grains which can be used for the chemical mechanical polishing aqueous dispersion which concerns on this embodiment, in the aqueous dispersion containing the organic particle | grains and inorganic particle which have a zeta potential different from a code | symbol, these particle | grains are an electrostatic force. It is also combined by the same. The zeta potential of the organic particles is often negative over the entire pH range or a wide range except for the low pH range. However, organic particles having a negative zeta potential more reliably by being organic particles having a carboxyl group, a sulfonic acid group, or the like. You can do Moreover, it can also be set as the organic particle which has a positive zeta potential in a specific pH range by setting it as the organic particle which has an amino group etc .. On the other hand, the zeta potential of the inorganic particles has a high pH dependence, has an isoelectric point at which the potential becomes zero, and the sign of the zeta potential is reversed before and after. Therefore, by combining specific organic particles and inorganic particles and mixing them in a pH region where these zeta potentials are inverted, organic particles and inorganic particles can be integrally combined by electrostatic force. In addition, at the time of mixing, even if the zeta potential is the eastern arc, the pH can be changed after that and the zeta potential is inverted so that the organic particles and the inorganic particles can be integrated.

In addition, as the organic-inorganic composite particles described above, polycondensation of alkoxysilanes, aluminum alkoxides, titanium alkoxides, and the like as described above is carried out in the presence of particles integrally complexed with electrostatic force, and further on at least the surface of the particles. Polysiloxane and the like can also be used in combination.

As an average particle diameter of the organic-inorganic composite particle used for the chemical mechanical polishing aqueous dispersion which concerns on this embodiment, 50-500 nm is preferable. If the average particle diameter is less than 50 nm, a sufficient polishing rate may not be expressed. In addition, when it exceeds 500 nm, aggregation and sedimentation of particles tend to occur. In addition, the average particle diameter of an abrasive grain can be measured with a laser scattering diffractometer, and can also be computed from a cumulative particle diameter and number by observing an individual particle with a transmission electron microscope.

The amount of the (C) abrasive grain used in the chemical mechanical polishing aqueous dispersion according to the present embodiment is preferably 0.01 to 10 mass%, more preferably relative to the mass of the chemical mechanical polishing aqueous dispersion at the time of use. It is 0.02-5 mass%. If the added amount of the abrasive grain is less than the above range, a sufficient polishing rate may not be obtained, and a large amount of time may be required to complete the polishing process. On the other hand, when the added amount of the abrasive grain exceeds the above range, the cost may be increased and a stable chemical mechanical polishing aqueous dispersion may not be obtained.

1.4. (D) amino acids

The chemical mechanical polishing aqueous dispersion according to the present embodiment contains the amino acid (D). One of the functions of the amino acid (D) is to improve the polishing rate when the chemical mechanical polishing aqueous dispersion is applied to the polishing of the substrate for an electro-optical display device or the semiconductor substrate. The amino acid (D) can promote the polishing rate, particularly for wiring materials containing copper or copper alloy.

As (D) amino acid which can be used for the chemical mechanical polishing aqueous dispersion which concerns on this embodiment, the amino acid which has coordination ability with respect to the surface of the wiring material or the ion containing a wiring material element is preferable. More preferably, it is an amino acid having a chelate coordination ability with respect to the surface of the wiring material or an ion containing a wiring material element, and specifically, glycine, alanine, aspartic acid, glutamic acid, lysine, arginine, aromatic amino acid, heterocyclic amino acid, etc. Can be. As (D) amino acid used by this embodiment, glycine is especially preferable among the said amino acids from the point which the effect of improving a polishing rate is high.

The amount of the (D) amino acid added to the chemical mechanical polishing aqueous dispersion according to the present embodiment is preferably 0.05 to 5 mass%, more preferably 0.1 to the mass of the chemical mechanical polishing aqueous dispersion at the time of use. 4 mass%, Especially preferably, it is 0.2-3 mass%. If the addition amount of (D) amino acid is less than the said range, sufficient grinding | polishing rate may not be obtained and it may require a lot of time to complete | finish a grinding | polishing process. On the other hand, when the addition amount of (D) amino acid exceeds the said range, a chemical etching effect may become large and the flatness of a to-be-polished surface may be impaired.

1.5. (E) oxidizing agent

In the chemical mechanical polishing aqueous dispersion according to the present embodiment, an oxidizing agent (E) can be added as necessary. One of the functions of the (E) oxidizing agent is to improve the polishing rate when the chemical mechanical polishing aqueous dispersion is applied to the polishing of the substrate for an electro-optical display device or the semiconductor substrate. The reason for this is that (E) the oxidizing agent oxidizes the surface of the copper film and promotes the complexing reaction with the components of the chemical mechanical polishing aqueous dispersion, thereby forming a weakly modified layer on the surface of the copper film, thereby making it easier to polish the copper film. I think.

Examples of the (E) oxidizing agent used in the chemical mechanical polishing aqueous dispersion according to the present embodiment include organic peroxides such as hydrogen peroxide, peracetic acid, perbenzoic acid and tert-butyl hydroperoxide, permanganate compounds such as potassium permanganate, and dichromic acid such as potassium dichromate. And halogenic acid compounds such as potassium iodide, nitric acid compounds such as nitric acid and iron nitrate, perhalonic acid compounds such as perchloric acid, persulfates such as ammonium persulfate, and heteropolyacids. Among these oxidants, organic peroxides such as hydrogen peroxide or persulfates such as ammonium persulfate, which are harmless to decomposition products, are more preferable, and hydrogen peroxide is particularly preferable.

The amount of the (E) oxidizing agent added to the chemical mechanical polishing aqueous dispersion according to the present embodiment is preferably 0.005 to 5 mass%, more preferably 0.01 to the mass of the chemical mechanical polishing aqueous dispersion at the time of use. 3 mass%, Especially preferably, it is 0.05-1 mass%. When the addition amount of the (E) oxidizing agent is less than the above range, the effect of chemical etching may not be sufficiently obtained. Therefore, a sufficient polishing rate cannot be obtained, and it may take a long time to finish the polishing step. On the other hand, when the addition amount of the (E) oxidizing agent exceeds the said range, the to-be-polished surface may be eroded.

1.6. (F) ammonium acid salt

In the chemical mechanical polishing aqueous dispersion according to the present embodiment, (F) ammonium acid salt may be added as necessary. One of the functions of the (F) ammonium acid salt is to improve the polishing rate when the chemical mechanical polishing aqueous dispersion is applied to the polishing of the substrate for an electro-optical display device or the semiconductor substrate.

As (F) ammonium acid salt which can be used for the chemical mechanical polishing aqueous dispersion which concerns on this embodiment, ammonium sulfate, ammonium chloride, ammonium nitrate, and ammonium organic acid are mentioned, for example. Examples of the ammonium organic acid include ammonium amide sulfate, ammonium formate, ammonium acetate, ammonium propionate, ammonium butyrate, ammonium lactate, ammonium succinate, ammonium malonate, ammonium maleate, ammonium fumarate, ammonium quinalate, and ammonium quinolate. Among them, ammonium amide sulfate is particularly preferred. In addition, (F) component means that it is an ammonium acid salt different from this compound, when the at least one compound of (A) component and (B) component is an ammonium acid salt.

The addition amount in the case of adding the (F) ammonium acid salt to the chemical mechanical polishing aqueous dispersion according to the present embodiment is preferably 0.05 to 5 mass% with respect to the mass of the chemical mechanical polishing aqueous dispersion in use, More preferably, it is 0.1-3 mass%, Especially preferably, it is 0.2-2 mass%. When the addition amount of the (F) ammonium acid salt is less than the above range, the effect of improving the polishing rate may not be obtained. On the other hand, when the addition amount of (F) ammonium acid salt exceeds the said range, the flatness of a to-be-polished surface may be impaired.

1.7. OTHER ADDITIVES

The chemical mechanical polishing aqueous dispersion according to the present embodiment can be blended with various additives as necessary in addition to the above components.

In the chemical mechanical polishing aqueous dispersion according to the present embodiment, the dispersion stability of the abrasive can be enhanced by adding an organic acid or an inorganic acid. Examples of the organic acid include compounds having heterocycles such as formic acid, acetic acid, oxalic acid, malonic acid, succinic acid, benzoic acid, and quinal acid and quinoline acid. Examples of the inorganic acid include nitric acid, sulfuric acid and phosphoric acid. Among these, organic acids are particularly preferred.

The chemical mechanical polishing aqueous dispersion according to the present embodiment can be adjusted to a desired pH by adding the above acid or alkali. Examples of the alkali include hydroxides of alkali metals such as sodium hydroxide, potassium hydroxide, rubidium hydroxide and cesium hydroxide, or ammonia. By adjusting the pH of the chemical mechanical polishing aqueous dispersion, the polishing rate can be controlled. PH can be set suitably by adding an acid or an alkali, taking into consideration factors, such as the electrochemical property of a to-be-polished surface and the dispersion stability of an abrasive grain. Among them, ammonia is particularly preferable from the viewpoint of improving the polishing rate.

2. Kits for preparing aqueous dispersions for chemical mechanical polishing

The chemical mechanical polishing aqueous dispersion can be supplied in a state capable of being used as a polishing composition as it is after production. Alternatively, a polishing composition (i.e., a concentrated polishing composition) containing each component of the chemical mechanical polishing aqueous dispersion in high concentrations is prepared, and the concentrated polishing composition is diluted during use to prepare a desired chemical mechanical polishing aqueous system. Dispersions can also be obtained.

In addition, a plurality of compositions (for example, two or three compositions) containing any one of the above components may be prepared as described below, and these may be mixed and used at the time of use. In this case, a plurality of liquids may be mixed to produce an aqueous mechanical dispersion for chemical mechanical polishing, and then the chemical liquid may be supplied to a chemical mechanical polishing apparatus. Aqueous dispersions may also be prepared. The said chemical mechanical polishing aqueous dispersion can be manufactured by mixing several liquid, for example using the 1st thru | or 3rd kit shown below.

2.1. First kit

The first kit is a kit for mixing the first composition and the second composition to obtain the chemical mechanical polishing aqueous dispersion. In the first kit, the first composition is an aqueous dispersion comprising (A) a compound represented by the formula (1), (B) a surfactant, (C) abrasive grains, and (D) amino acids, and the second The composition of (E) is an aqueous solution containing an oxidizing agent. Moreover, (F) ammonium acid salt can also be added to the said 1st composition. In addition, (A) component-(F) component are "1. Chemical mechanical polishing aqueous dispersion ".

When manufacturing the 1st composition and 2nd composition which comprise a 1st kit, each component mentioned above is contained in the above-mentioned concentration range in the aqueous dispersion obtained by mixing a 1st composition and a 2nd composition. If possible, it is necessary to determine the concentration of each component contained in the first composition and the second composition. In addition, the first composition and the second composition may contain a high concentration of each component (ie, may be concentrated), and in this case, dilution at the time of use to obtain the first composition and the second composition It is possible. According to the first kit, the storage stability of the (E) oxidant contained in the second composition can be particularly improved by dividing the first composition and the second composition.

In the case of producing the chemical mechanical polishing aqueous dispersion using the first kit, the first composition and the second composition may be separately prepared and supplied, and may be integrated at the time of polishing, and the mixing method and timing thereof. Is not specifically limited. For example, a first composition and a second composition containing high concentrations of each component are prepared, and when used, the first composition and the second composition are diluted, and these are mixed, and the concentration of each component is in the above range. A chemical mechanical polishing aqueous dispersion is prepared. Specifically, in the case where the first composition and the second composition are mixed in a weight ratio of 1: 1, the first composition and the second composition are concentrated at twice the concentration of each component of the chemical mechanical polishing aqueous dispersion actually used. The composition of can be prepared. In addition, the first composition and the second composition of twice or more concentrations may be prepared, and these may be mixed in a weight ratio of 1: 1, and then diluted with water so that each component is in the above range.

When using the first kit, the chemical mechanical polishing aqueous dispersion may be produced at the time of polishing. For example, after mixing a 1st composition and a 2nd composition to produce the said chemical mechanical polishing aqueous dispersion, it can also supply this to a chemical mechanical polishing apparatus, and can separate a 1st composition and a 2nd composition separately. It can also supply to a chemical mechanical polishing apparatus, and can mix on a surface plate. Alternatively, the first composition and the second composition may be separately supplied to the chemical mechanical polishing apparatus to be line mixed in the apparatus, or a mixing tank may be provided in the chemical mechanical polishing apparatus to be mixed in the mixing tank. . In addition, in line mixing, in order to obtain a more uniform aqueous dispersion, a line mixer etc. can also be used.

2.2. Second kit

The second kit is a kit for producing the chemical mechanical polishing aqueous dispersion by mixing the third composition and the fourth composition. In a second kit, the third composition is an aqueous dispersion containing (C) abrasive grains, and the fourth composition is an aqueous solution containing (D) amino acids. And at least one of the said 3rd composition and the said 4th composition contains (A) the compound represented by the said Formula (1), and (B) surfactant. Moreover, at least one of the said 3rd composition and the said 4th composition contains the (E) oxidizing agent. Moreover, (F) ammonium salt can be contained in at least one of a 3rd composition and a 4th composition. In addition, (A) component-(F) component are "1. Chemical mechanical polishing aqueous dispersion ".

When manufacturing the 3rd composition and 4th composition which comprise a 2nd kit, each component mentioned above is contained in the above-mentioned concentration range in the aqueous dispersion obtained by mixing a 3rd composition and a 4th composition. If possible, it is necessary to determine the concentration of each component contained in the third composition and the fourth composition. In addition, the third composition and the fourth composition may contain a high concentration of each component (ie, may be concentrated), and in this case, dilution at the time of use to obtain the third composition and the fourth composition It is possible. According to the second kit, by dividing the third composition and the fourth composition, the storage stability of the (C) abrasive grains contained in the third composition can be particularly improved.

When manufacturing the said chemical mechanical polishing aqueous dispersion using a 2nd kit, a 3rd composition and a 4th composition may be prepared and supplied separately, and may be integrated at the time of grinding | polishing, the mixing method and timing thereof Is not specifically limited. For example, a third composition and a fourth composition containing each component at high concentrations are prepared, and when used, the third composition and the fourth composition are diluted, and these are mixed, and the concentration of each component is in the above range. A chemical mechanical polishing aqueous dispersion is prepared. Specifically, in the case where the third composition and the fourth composition are mixed in a weight ratio of 1: 1, the third composition and the fourth composition are concentrated twice as much as the concentration of each component of the chemical mechanical polishing aqueous dispersion actually used. The composition of can be prepared. In addition, the third composition and the fourth composition of twice or more concentrations may be prepared, and these may be mixed in a weight ratio of 1: 1, and then diluted with water so that each component is in the above range.

When using the second kit, the chemical mechanical polishing aqueous dispersion may be produced at the time of polishing. For example, after mixing the third composition and the fourth composition to produce the chemical mechanical polishing aqueous dispersion, it may be supplied to the chemical mechanical polishing apparatus, and the third composition and the fourth composition may be separately. It can also supply to a chemical mechanical polishing apparatus, and can mix on a surface plate. Alternatively, the third composition and the fourth composition may be separately supplied to the chemical mechanical polishing apparatus to be line mixed in the apparatus, or a mixing tank may be provided in the chemical mechanical polishing apparatus to mix in the mixing tank. . In addition, in line mixing, in order to obtain a more uniform aqueous dispersion, a line mixer etc. can also be used.

2.3. Third kit

The third kit is a kit for preparing the chemical mechanical polishing aqueous dispersion by mixing the fifth composition, the sixth composition, and the seventh composition. In a third kit, the fifth composition is an aqueous solution containing (E) an oxidizing agent, the sixth composition is an aqueous dispersion comprising (C) abrasive grains, and the seventh composition is (D) It is an aqueous solution containing amino acids. And at least one selected from the fifth composition, the sixth composition, and the seventh composition includes (A) the compound represented by the formula (1), and (B) a surfactant. Moreover, (F) ammonium acid salt can be added to 1 or more types chosen from the 5th-7th composition. In addition, (A) component-(F) component are "1. Chemical mechanical polishing aqueous dispersion &quot;.

In the case of producing the fifth to seventh compositions constituting the third kit, the fifth component is included in the above-described concentration range in the aqueous dispersion obtained by mixing the fifth to seventh compositions. It is necessary to determine the concentration of each component contained in the seventh to seventh compositions. In addition, the fifth to seventh compositions may contain a high concentration of each component (that is, may be concentrated), and in this case, it is possible to dilute at the time of use to obtain the fifth to seventh compositions. According to the third kit, by dividing the fifth to seventh compositions, the storage stability of the (E) oxidant included in the fifth composition and the (C) abrasive grains included in the sixth composition can be improved. .

In the case of producing the chemical mechanical polishing aqueous dispersion using the third kit of the present embodiment, the fifth to seventh compositions may be separately prepared and supplied, and may be integrated at the time of polishing. And timing are not particularly limited. For example, a fifth to seventh composition containing a high concentration of each component is prepared, and when used, the fifth to seventh compositions are diluted, and these are mixed, so that the concentration of each component is within the above range. A polishing aqueous dispersion is prepared. Specifically, in the case where the fifth to seventh compositions are mixed at a weight ratio of 1: 1: 1, the fifth to seventh compositions are concentrated to three times the concentration of each component of the chemical mechanical polishing aqueous dispersion actually used. Can be prepared. In addition, the fifth to seventh compositions having a concentration of three times or more may be prepared, and these may be mixed in a weight ratio of 1: 1: 1, and then diluted with water so that each component is in the above range.

When using the third kit, the chemical mechanical polishing aqueous dispersion may be prepared at the time of polishing. For example, after mixing the fifth to seventh compositions to produce the chemical mechanical polishing aqueous dispersion, this may be supplied to a chemical mechanical polishing apparatus, and the fifth to seventh compositions may be chemically polished separately. It can also supply to an apparatus and mix on a surface plate. Alternatively, the fifth to seventh compositions may be separately supplied to the chemical mechanical polishing apparatus to be line mixed in the apparatus, or a mixing tank may be provided in the chemical mechanical polishing apparatus to be mixed in the mixing tank. In addition, in line mixing, in order to obtain a more uniform aqueous dispersion, a line mixer etc. can also be used.

3. Chemical mechanical polishing method and manufacturing method of substrate for electro-optical display device

In the chemical mechanical polishing step, it is possible to select an appropriate chemical mechanical polishing aqueous dispersion according to the purpose depending on the difference in the polishing target. The chemical mechanical polishing process in the method for manufacturing an electro-optical display substrate according to the present embodiment can be divided into a first step of mainly polishing a wiring layer and a second step of mainly polishing a barrier metal film. The chemical mechanical polishing aqueous dispersion according to the present embodiment can be applied to the first step process for polishing a wiring layer containing copper or a copper alloy.

The chemical mechanical polishing method and the manufacturing method of the substrate for an electro-optical display device according to the present embodiment will be specifically described with reference to the drawings. 1 to 5 are cross-sectional views of a substrate for an electro-optical display device showing a process of chemical mechanical polishing according to the present embodiment.

As a board | substrate used for the manufacturing method of the board | substrate for electro-optical display apparatus which concerns on this embodiment, a glass substrate, a film substrate, or a plastic substrate can be used, for example. As the size of the substrate, for example, a diagonal dimension of 1500 mm to 3000 mm can be used. The substrate may be a monolayer, or may be a laminate in which an insulating film such as silicon oxide is formed on the substrate.

First, as shown in FIG. 1, the glass substrate 10 is prepared, for example. The glass substrate 10 has the wiring recessed part 12 for forming wiring. Dry etching is used as a method of forming the recessed part 12 for wiring on the glass substrate 10. Dry etching is a method of physically processing an accelerated ion by irradiating a glass substrate, and fine pattern processing can be performed by precisely controlling an irradiation beam. The glass substrate 10 may include materials such as soda lime glass, borosilicate glass, aluminosilicate glass, quartz glass, and the like.

Next, as shown in FIG. 2, the barrier metal film 20 is formed so that the surface of the glass substrate 10 and the bottom part and inner wall surface of the wiring recessed part 12 may be covered. The barrier metal film 20 may include a material such as tantalum or tantalum nitride. As the method for forming the barrier metal film 20, chemical vapor deposition (CVD) is applied.

Next, as shown in FIG. 3, the metal for wiring is deposited so that the surface of the barrier metal film 20 may be covered, and the metal film 30 is formed. The metal film 30 may include copper or a copper alloy. As the method for forming the metal film 30, a physical vapor deposition method (PVD) such as sputtering or vacuum deposition can be applied.

Next, as shown in FIG. 4, the extra metal film 30 other than the part buried in the wiring recessed part 12 is removed by chemical mechanical polishing using the chemical mechanical polishing aqueous dispersion which concerns on this embodiment. . The above-described method is also repeated until the barrier metal film 20 is exposed. After chemical mechanical polishing, it is preferable to remove the abrasive grains remaining on the surface to be polished. Removal of this abrasive grain can be performed by a normal washing method.

Finally, as shown in FIG. 5, the surfaces of the barrier metal film 20 and the glass substrate 10 formed in addition to the wiring recess 12 are chemically mechanically polished using a chemical mechanical polishing aqueous dispersion for the barrier metal film. To remove it.

Since the chemical mechanical polishing method removes the metal film 30 using the chemical mechanical polishing aqueous dispersion according to the present embodiment, its polishing rate is high, the in-plane flatness of polishing is good, and polishing such as dishing is performed. It is difficult for defects to occur. Therefore, according to this method, the board | substrate for electro-optical display devices and semiconductor substrate which have wiring metal, it is highly refined, and is excellent in in-plane flatness can be manufactured with high throughput.

4. Examples

Hereinafter, although an Example demonstrates this invention, this invention is not limited at all by this Example.

4.1. Evaluation board

4.1.1. Substrate to be used for evaluation of flatness (discing)

A barrier metal film containing tantalum nitride having a thickness of 30 nm was formed on the surface of a glass substrate having a diagonal dimension of 2000 mm having a wiring pattern having a width of 300 µm formed by a recess having a depth of 3 µm. Thereafter, copper was deposited to a thickness of 6 탆 by sputtering on the barrier metal film and in the recesses. Hereinafter, the board | substrate obtained in this way is called "substrate a."

4.1.2. Substrate to be used for evaluation of in-plane uniformity

A barrier metal film containing tantalum nitride having a thickness of 30 nm is formed on the surface of the glass substrate having a diagonal dimension of 2000 mm. Thereafter, copper was deposited on the barrier metal film to a thickness of 6 탆 by sputtering. Hereinafter, the board | substrate obtained in this way is called "substrate b."

4.1.3. Substrate to be used for evaluation of polishing rate

A silicon substrate with an 8-inch thermal oxide film on which a copper film having a film thickness of 15,000 angstroms is laminated (hereinafter referred to as "substrate c").

A silicon substrate with an 8-inch thermal oxide film on which a tantalum film having a thickness of 2,000 angstroms is laminated (hereinafter referred to as "substrate d").

4.1.4. Substrate used for evaluation of flatness (dishing, erosion)

By calculating the ratio of the polishing rate between the copper film and the PETEOS film calculated by the substrates c and d, basic polishing characteristics in polishing the semiconductor substrate of the aqueous mechanical dispersion for chemical mechanical polishing can be confirmed.

However, in chemical mechanical polishing of patterned wafers with grooves serving as wiring patterns, it is known that localized areas are excessively polished. In the surface of the pattern wafer before chemical mechanical polishing, irregularities reflecting grooves serving as wiring patterns are formed on the surface of the metal film. When chemical mechanical polishing is performed, a high pressure is applied locally according to the pattern density, and the polishing rate of the portion is increased. Because it is faster.

Therefore, since it is necessary to polish a pattern wafer that mimics a semiconductor substrate, and to evaluate its polishing rate and erosion, a substrate with a pattern (1,000 angstroms of silicon nitride film is deposited on a silicon substrate, and a low dielectric constant insulating film (Black Diamond film) is deposited thereon. ), 4,500 angstroms, and further PETEOS film 500 angstrom sequential lamination, and then "SEMATECH 854" mask pattern processing, 250 angstrom tantalum film, 1000 angstrom copper seed film and 10,000 angstrom copper plating film sequentially laminated The test was performed using the board | substrate for dragons, "substrate e" hereafter.

4.2. Preparation of an Aqueous Dispersion Comprising an Abrasive Grain Including an Abrasive Grain or Composite Particles

4.2.1. Preparation of Aqueous Dispersion Including Inorganic Abrasives

(a) Preparation of Aqueous Dispersion Containing Fumed Silica Particles

2 kg of fumed silica particles (manufactured by Nippon Aerosil Co., Ltd., trade name "Aerosil # 90") are dispersed in 6.7 kg of ion-exchanged water using an ultrasonic disperser and filtered by a filter having a pore diameter of 5 μm. Thus, an aqueous dispersion containing fumed silica was prepared.

(b) Preparation of an Aqueous Dispersion Containing Colloidal Silica a

70 g of ammonia water, 40 g of ion-exchanged water, 175 g of ethanol, and 21 g of tetraethoxysilane were charged into a 2000 cm 3 flask, and the temperature was raised to 60 ° C. while stirring at 180 rpm. After stirring for 2 hours at 60 ° C, the mixture was cooled and a colloidal silica / alcohol dispersion having an average particle diameter of 70 nm was obtained. Subsequently, the evaporator removed the alcohol in a dispersion by repeating the operation which removes alcohol amount several times, adding ion-exchange water to this dispersion at 80 degreeC, and the water dispersion of 8 mass% of solid content concentration was manufactured.

(c) Preparation of an Aqueous Dispersion Containing Colloidal Silica b

No. 3 water glass (24 mass% of silica concentration) was diluted with water, and it was set as the diluted sodium silicate aqueous solution of 3.0 mass% of silica concentrations. This diluted sodium silicate aqueous solution was passed through a hydrogen type cation exchange resin layer to obtain an active silicic acid aqueous solution of pH 3.1 from which most of sodium ions were removed. Then, 10 mass% potassium hydroxide aqueous solution was added immediately under stirring, pH was adjusted to 7.2, and it heated further and boiled further, and heat-aged for 3 hours. To the obtained aqueous solution, 10 times the amount of the active silicic acid aqueous solution which adjusted pH to 7.2 first was added little by little over 6 hours, and the average particle diameter of a silica particle was grown to 26 nm.

Next, the dispersion aqueous solution containing the said silica particle was concentrated under reduced pressure (boiling point 78 degreeC), and the silica particle dispersion which was a silica concentration: 32.0 mass%, the average particle diameter of a silica: 26 nm, pH: 9.8 was obtained. After passing this silica particle dispersion again through a hydrogen type cation exchange resin layer and removing most of sodium, 10 mass% potassium hydroxide aqueous solution was added, and a silica particle dispersion of silica particle concentration: 28.0 mass% and pH: 10.0. Got.

4.2.2. Preparation of an Aqueous Dispersion Containing Abrasive Grains Containing Composite Particles

(d) Preparation of Aqueous Dispersion Including Polymer Particles

90 parts by mass of methyl methacrylate, 5 parts by mass of methoxy polyethylene glycol methacrylate (manufactured by Shin-Nakamura Chemical Industries, Ltd., trade name "NK Ester M-90G", # 400), 4-vinylpyridine, 2 parts by mass of an azo polymerization initiator (manufactured by Wako Pure Chemical Industries, Ltd., brand name "V50") and 400 parts by mass of ion-exchanged water were charged into a flask having a capacity of 2000 cm 3, and heated to 70 ° C. under a nitrogen gas atmosphere while stirring. And polymerization was carried out for 6 hours. This obtained the water dispersion containing the polymethylmethacrylate type particle | grains of 150 nm of average particle diameters provided with the functional group which has the cation of an amino group, and a polyethyleneglycol chain. In addition, the polymerization yield was 95%.

(e) Preparation of Aqueous Dispersion Containing Composite Particles

100 mass parts of the water dispersion containing 10 mass% of polymethylmethacrylate type particle | grains obtained by said "production of the water dispersion containing (d) polymer particle" were thrown into the flask of capacity 2000cm <3>, and methyltrimethoxy 1 mass part of silanes were added, and it stirred at 40 degreeC for 2 hours. Thereafter, the pH was adjusted to 2 with nitric acid to obtain an aqueous dispersion (f). Furthermore, the pH of the aqueous dispersion containing 10 mass% of colloidal silica (Nissan Chemical Co., Ltd. make, brand name "Snotex O") was adjusted to 8 with potassium hydroxide, and the aqueous dispersion (g) was obtained. . The zeta potential of the polymethylmethacrylate-based particles contained in the water dispersion (f) was +17 mV, and the zeta potential of the silica particles contained in the water dispersion (g) was -40 mV. Thereafter, 50 parts by mass of the aqueous dispersion (g) were gradually added over 2 hours to 100 parts by mass of the water dispersion (f), mixed, stirred for 2 hours, and particles having silica particles attached to the polymethylmethacrylate particles. An aqueous dispersion containing the obtained was obtained. Subsequently, 2 parts of vinyl triethoxysilanes are added to this aqueous dispersion, and after stirring for 1 hour, 1 mass part of tetraethoxysilanes are added, and it heats up at 60 degreeC, continues stirring for 3 hours, and then cools it, An aqueous dispersion (e) containing the particles was obtained. The average particle diameter of this composite grain | particle was 180 nm, and the silica particle was affixed on 80% of the surface of a polymethylmethacrylate type particle | grain.

4.3. Preparation of Aqueous Dispersions for Chemical Mechanical Abrasion

Said "4.2. A predetermined amount of the water dispersion prepared in "Preparation of an Aqueous Dispersion Comprising an Abrasive Grain incorporating Inorganic Abrasives or Composite Particles" was added to a polyethylene bottle having a capacity of 1000 cm 3 for each Example, respectively, to which (A) The compounds of the general formula (1), (D) amino acids, and (F) ammonium acid salts were each added so as to finally have the contents shown in Tables 1 to 2, and the mixture was sufficiently stirred. The compound of formula (A) shown in Tables 1 to 2 is a compound (A), and a surfactant having a group represented by -SO ₃ X in R ³ in the formula (1) (trade name "Nucol 291-M" Nippon Nu) Kazai Kabushiki Co., Ltd.) as a compound (B), and a surfactant having a group represented by -SO ₃ X in R ³ in the general formula (1) (brand name "New Cole 292-PG" Nippon New Kazai Co., Ltd.) , As the compound (C), a surfactant which is a dipotassium alkenyl succinate (manufactured by the trade name "Latte ASK" Cao Kabu Seiki Co., Ltd.), and as a compound (D), is represented by R ³ to -SO ₃ X in the general formula (1). Surfactants (brand name "Ferex TA" Kao Kabuki Kaisha, Ltd.) which have the group shown are used, respectively. As the (D) amino acid, any one of glycine, alanine and aspartic acid was used. (F) Ammonium amide sulfate was used as an ammonium acid salt.

Thereafter, with stirring, the aqueous solutions of the (B) surfactants and (E) oxidizing agents shown in Tables 1 to 2 were each added so that the (B) surfactants and (E) oxidizing agents were finally the contents of Tables 1 to 2, respectively. Added. The (B) surfactant used here is any one of dodecylbenzenesulfonic acid, potassium dodecylbenzenesulfonic acid, and ammonium dodecylbenzenesulfonic acid, and (E) the oxidizing agent is any one of hydrogen peroxide and ammonium persulfate. After sufficiently stirring, the pH was adjusted with aqueous potassium hydroxide solution or ammonia, followed by addition of ion-exchanged water, followed by filtration with a filter having a pore diameter of 5 μm, Examples 1 to 8, 12 to 18, and Comparative Examples 1 to 7 And the chemical mechanical polishing aqueous dispersions of Reference Examples 1 and 2 were obtained.

4.4. Preparation of Aqueous Dispersion for Chemical Mechanical Polishing Using the First Kit

4.4.1. Preparation of the First Composition

Polyethylene bottle was converted into the amount equivalent to 6.0 mass% of the water dispersion containing the colloidal silica manufactured in said "4.2.1 (b) preparation of the water dispersion containing colloidal silica a" into silica. 0.24 mass% of alkenyl succinate dipotassium (brand name "Latte water ASK", the Kao Kabushiki Kaisha), dodecylbenzenesulfonic acid (brand name "Neoperex GS", the Kao Corporation) 0.24 mass%, glycine to this 2.4 mass% and 3.0 mass% of ammonium amide sulfates were added sequentially, and it stirred for 15 minutes. Subsequently, a proper amount of ammonia and potassium hydroxide is adjusted to adjust the pH, and ion-exchanged water is added so that the total amount of all components becomes 100 mass%, and then filtered through a filter having a pore diameter of 5 μm, thereby obtaining the first composition A1 as an aqueous dispersion. Got it.

4.4.2. Preparation of Second Composition

The concentration was adjusted with ion exchanged water so that the hydrogen peroxide concentration was 5% by mass, to obtain a second composition B1. By the above process, the kit for manufacturing the chemical mechanical polishing aqueous dispersion containing the 1st composition A1 and the 2nd composition B1 was produced.

4.4.3. Preparation of Aqueous Dispersion X1 for Chemical Mechanical Abrasion

The 1st composition A1 and the 2nd composition B1 were each put in the container made of polyethylene, and it stopped and stored for 6 months at room temperature. A1 after 6 months storage; 50 mass% and B1; 8 mass% was mixed, ion-exchange water was added so that the total amount of all the components might be 100 mass%, and the chemical mechanical polishing aqueous dispersion X1 was manufactured. This chemical mechanical polishing aqueous dispersion X1 has the same composition and pH as the chemical mechanical polishing aqueous dispersion prepared in Example 5. Using this chemical mechanical polishing aqueous dispersion X1, "4.7. Test in accordance with the "polishing evaluation test". Let this be Example 9, and the result is shown in Table 1.

4.5. Preparation of Aqueous Dispersion for Chemical Mechanical Polishing Using a Second Kit

4.5.1. Preparation of Third Composition

Said "4.2.1. (b) Preparation of an Aqueous Dispersion Containing Colloidal Silica a ”, in which the aqueous dispersion containing colloidal silica was converted into silica, an amount equivalent to 6.0 mass% was placed in a polyethylene bottle, and an alkenyl 0.24 mass% of dipotassium succinate, 0.24 mass% of dodecylbenzenesulfonic acid, and 35 mass% of hydrogen peroxide were sequentially added in an amount equivalent to 0.8 mass%, and the pH was adjusted with ammonia, followed by stirring for 15 minutes. . Subsequently, after adding ion-exchange water so that the total amount of all components may be 100 mass%, the 3rd composition A2 which is an aqueous dispersion was obtained by filtering by the filter of 5 micrometers of pore diameters.

4.5.2. Preparation of the Fourth Composition

Into a bottle made of polyethylene, 2.4 mass% of glycine and 3.0 mass% of ammonium amide sulfate were sequentially added, and ion-exchanged water was added so that the total amount of all components was 100 mass%, followed by stirring for 15 minutes. The fourth composition B2 as an aqueous dispersion was obtained by filtration with a filter of μm. By the above process, the kit for manufacturing the chemical mechanical polishing aqueous dispersion containing the 3rd composition A2 and the 4th composition B2 was produced.

4.5.3. Preparation of Aqueous Dispersion X2 for Chemical Mechanical Abrasion

The third composition A2 and the fourth composition B2 were each placed in a separate polyethylene container and capped and stored at room temperature for six months. A2 after 6 months storage; 50 mass% and B2; 50 mass% was mixed and the chemical mechanical polishing aqueous dispersion X2 was produced. This chemical mechanical polishing aqueous dispersion X2 had the same composition as the chemical mechanical polishing aqueous dispersion prepared in Example 5 and had the same pH. Using this chemical mechanical polishing aqueous dispersion X2, the following "4.7. Test in accordance with the "polishing evaluation test". This was set to Example 10, and the results are shown in Table 1.

4.6. Preparation of Aqueous Dispersion for Chemical Mechanical Polishing Using a Third Kit

4.6.1. Preparation of the Fifth Composition

Said "4.2.1. (b) Preparation of an Aqueous Dispersion Containing Colloidal Silica a ”, in which the aqueous dispersion containing colloidal silica was converted into silica, an amount equivalent to 6.0 mass% was placed in a polyethylene bottle, and an alkenyl 0.24 mass% of dipotassium disuccinate, 0.24 mass% of dodecylbenzenesulfonic acid, and then ammonia were added, and it stirred for 15 minutes. Subsequently, after adding ion-exchange water so that the total amount of all the components might be 100 mass%, the 5th composition A3 which is an aqueous dispersion was obtained by filtering by the filter of 5 micrometers of pore diameters.

4.6.2. Preparation of the Sixth Composition

Into a bottle made of polyethylene, 4.8 mass% of glycine and 6.0 mass% of ammonium amide sulfate were sequentially added, and ion-exchanged water was added so that the total amount of all components was 100 mass%, followed by stirring for 15 minutes. The 6th composition B3 which is an aqueous dispersion was obtained by filtering by the filter of micrometer.

4.6.3. Preparation of Seventh Composition

The 7th composition C3 was obtained by density | concentration adjustment with ion-exchange water so that hydrogen peroxide concentration might be 5 mass%. By the above process, the kit for manufacturing the chemical mechanical polishing aqueous dispersion containing the 5th composition A3, the 6th composition B3, and the 7th composition C3 was produced.

4.6.4. Preparation of Aqueous Dispersion X3 for Chemical Mechanical Abrasion

The 5th composition A3, the 6th composition B3, and the 7th composition C3 were each put in the container made of polyethylene, and it stopped and stored for 6 months at room temperature.

A3 after 6 months storage; 50 mass%, B3; 25 mass% and C3; 8 mass% was mixed, ion-exchange water was added so that the total amount of all the components might be 100 mass%, and the chemical mechanical polishing aqueous dispersion X3 was manufactured. This chemical mechanical polishing aqueous dispersion X3 had the same composition as the chemical mechanical polishing aqueous dispersion prepared in Example 5 and had the same pH. Using this chemical mechanical polishing aqueous dispersion X3, the following "4.7. Test in accordance with the "polishing evaluation test". Let this be Example 11, and the result is shown in Table 1.

4.7. Abrasive evaluation test

4.7.1. Polishing Copper Clad Substrate

4.7.1a. Evaluation of Polishing Speed

Using the chemical mechanical polishing aqueous dispersion of Examples 1 to 11, Comparative Examples 1 to 3 and Reference Example 1, the substrate with a copper film was polished under the following conditions. This evaluation was performed using the board | substrate b mentioned above.

ㆍ Polishing device: chemical mechanical polishing machine for display substrate

ㆍ Polishing pad: Grooved urethane foam material chemical mechanical polishing pad

Carrier-head load: 200 g / cm 2

Head rotation speed: 60 rpm

Table rotation speed: 65 rpm

ㆍ Abrasive Supply: 150 cm 3 / min

Polishing time: 30 seconds

Conventional chemical mechanical polishing apparatus (manufactured by Ebara Seisakusho Co., Ltd., model `` EPO-112 '') so that the chemical mechanical polishing machine for the display substrate is capable of chemical mechanical polishing the display substrate having a diagonal dimension of 2000 mm. It is a renovation.

The polishing rate was calculated by the following equation.

[Equation 2]

Polishing speed (nm / min) = (thickness of copper film after polishing-thickness of copper film after polishing) / polishing time

In addition, the thickness of the copper film measured the sheet resistance by the direct current 4-needle method using a resistivity measuring instrument (made by NPS Corporation, model "Z-5"), and calculated it according to following formula (3) from this resistivity and the resistivity of copper. .

&Quot; (3) &quot;

Copper film thickness (nm) = copper theoretical resistivity (Ωcm) ÷ sheet resistance value (Ω) × 10 ⁷

When the value of the polishing rate is 1500 (nm / min) or more, it can be said that the polishing rate is good.

4.7.1b. Evaluation of dishing

If the initial excess film of thickness T (nm) in which the wiring material is deposited on the recessed part is polished at the polishing rate V (nm / min), the object can be achieved by polishing only the time of T / V (min). However, in an actual manufacturing process, in order to remove the wiring material which remains in parts other than a recessed part, over polishing exceeding T / V (minute) is performed. At this time, the wiring portion may be excessively polished, which may result in a concave shape. Such concave wiring shape is called "discing" and is not preferable from the viewpoint of reducing the yield of a manufactured product. Therefore, dishing was adopted as an evaluation item in each Example.

Evaluation of dishing was performed by measuring the 300 micrometer wiring of the board | substrate a using the surface roughness meter (KLA Tencor company make, model "P-10"). In addition, the grinding | polishing time in evaluation of dishing shows the excess copper film of the initial stage of thickness T (nm) "4.7.1. It was set as the time (minutes) which multiplied 1.5 by the value (T / V) (minutes) divided by the polishing rate V (nm / minute) obtained by the polishing of the board | substrate with a copper film.

The term of dishing in the evaluation item of Table 1 described the quantity of the recessed part of the copper wiring measured by the said surface roughness meter as a dishing value (micrometer). When the value of dishing is 1 (micrometer) or less, it can be said that dishing is suppressed.

4.7.1c. In-plane uniformity evaluation

The film thickness of the board | substrate before and after chemical mechanical polishing was measured about 33 points taken uniformly except the range of 5 mm from both ends with respect to the longitudinal direction of the board | substrate b in which the said copper film was formed. From these measurement results, polishing rates and in-plane uniformity were calculated by the following equations (4) to (6).

&Quot; (4) &quot;

Polishing amount = film thickness before polishing-film thickness after polishing

[Equation 5]

Polishing speed = Σ (polishing amount) / polishing time

&Quot; (6) &quot;

In-plane uniformity = (average of standard deviation of polishing amount ÷ polishing amount) × 100 (%)

When in-plane uniformity is 10% or less, it can be said that in-plane uniformity is favorable.

4.7.1d. Evaluation results

Examples 1 to 8, Comparative Examples 1 to 3, and Reference Example 1 partially changed the components or concentration of the chemical mechanical polishing aqueous dispersion, and the formulation thereof is as shown in Table 1.

In the chemical mechanical polishing aqueous dispersions of Examples 1 to 8, the polishing rate was sufficiently high at 1710 nm / min or more, the dishing of 300 μm wiring was small at 0.82 μm or less, and the in-plane uniformity was 8.6% or less. In view of the above, the chemical mechanical polishing aqueous dispersions of Examples 1 to 8 have a high polishing rate and high in-plane uniformity in chemical mechanical polishing of a substrate (display substrate) having a large surface area to be polished. It turned out that dishing can be suppressed.

In particular, in Example 1, although the polishing rate was very high at 2980 nm / min, the dishing of the 300 μm wiring was as small as 0.77 μm, and the in-plane uniformity was low at 8.0%, and very good results were obtained.

In addition, as shown in Table 1, the results which are substantially the same as those in Examples 9 to 11 are obtained. That is, even when the chemical mechanical polishing aqueous dispersion was prepared using the kit stored at room temperature for 6 months, it was found that the same performance was obtained immediately after the preparation. This result proved that the storage stability of each component contained in the chemical mechanical polishing aqueous dispersion can be ensured at least as a kit. On the other hand, the chemical mechanical polishing aqueous dispersion of Example 5 stored at room temperature for 6 months showed an enlargement of abrasive grains, and in use, the dispersion was required to be re-dispersed such as ultrasonication.

Comparative Example 1 is an example in which the amino acid (D) is not contained. The polishing rate is not sufficient, and when used for the production of a large-area substrate such as a substrate for an electro-optical display device, it is difficult to realize a high throughput.

Comparative Example 2 is an example in which the compound represented by the formula (A) (1) is not included. The polishing rate is not bad, but the dishing and in-plane uniformity are too large, so that the preparation of a substrate for an electro-optic display device is performed. It is not desirable.

Comparative Example 3 is an example in which the (B) surfactant is not included, but the polishing rate is not bad, but because dishing and in-plane uniformity are too large, it is preferable for the production of substrates such as substrates for electro-optic display devices. Can not.

Reference Example 1 is an example in which the (E) oxidizing agent is not contained. The polishing rate is very small, and when used for the production of a large-area substrate such as a substrate for an electro-optic display device, it is difficult to realize a high throughput. In addition, in this example, since the polishing rate was too small, it was impossible to evaluate dishing and in-plane uniformity.

4.7.2. Semiconductor Substrate Polishing

A porous polyurethane polishing pad (Rom & Haas, Part No. `` IC1010 '') was attached to a chemical mechanical polishing device (manufactured by Applied Material, model "MIRRA-Mesa"), and supplied an aqueous dispersion for chemical mechanical polishing. On the other hand, the substrate c, the substrate d, and the substrate e were polished for 1 minute under the following polishing conditions, and the polishing rate, flatness and the presence or absence of defects were evaluated by the following method. His results are shown in Table 2.

4.7.2a. Evaluation of Polishing Speed

(1) polishing conditions

Head rotation speed: 70 rpm

Head load: 200 gf / ㎠

Table rotation speed: 70 rpm

ㆍ feed rate of chemical mechanical polishing aqueous dispersion: 200 mL / min

In this case, the supply rate of the chemical mechanical polishing aqueous dispersion means the value assigned per unit time to the total of the supply amount of all the feed liquids.

(2) Calculation method of polishing rate

About the copper film and the tantalum film, the film thickness after the grinding | polishing process of each film in the board | substrate c and the board | substrate d was measured using the electrically conductive film thickness meter (KLA Tencor Corporation make, "omnimab RS75"), The polishing rate was calculated from the film thickness and polishing time reduced by chemical mechanical polishing.

4.7.2b. Flatness evaluation

(1) Polishing Conditions of Polishing Process

The aqueous mechanical dispersion for chemical mechanical polishing of Examples 12 to 18 and Comparative Examples 4 to 7 and Reference Example 2 was used as the aqueous dispersion for the polishing treatment step.

Head rotation speed: 70 rpm

Head load: 200 gf / ㎠

Table rotation speed: 70 rpm

ㆍ feed rate of chemical mechanical polishing aqueous dispersion: 200 mL / min

In this case, the supply rate of the chemical mechanical polishing aqueous dispersion means the value assigned per unit time to the total of the supply amount of all the feed liquids.

Polishing time: After the copper film was removed from the surface to be polished and the barrier metal film was exposed, the time point of polishing for 30 seconds was further defined as the polishing end point.

(2) Evaluation method of flatness

With respect to the to-be-polished surface of the board | substrate e after the grinding | polishing process on the said conditions, copper wiring width (line, L) / insulation film width (space, S) were made using the high resolution profiler (KLA Tencor company make, model "HRP240ETCH"). The dishing amount (nm) in the copper wiring part which is 100 micrometers / 100 micrometers, respectively was measured. The results are shown in Table 2. It is preferable that it is 30 nm or less, and, as for a dishing amount, it is more preferable that it is 20 nm or less.

The erosion amount (nm) in the part where the micro wiring length was 1000 micrometers continuous in the pattern whose copper wiring width (line, L) / insulation film width (space, S) is 9 micrometers / 1 micrometer, respectively was measured. The results are shown in Table 2. It is preferable that it is 30 nm or less, and, as for the amount of erosion, it is more preferable that it is 20 nm or less.

4.7.2c. Erosion Assessment

Using a scanning electron microscope (manufactured by Applied Material Co., Ltd., model "SEM Vision G3"), the portion where the periphery was an insulating portion and a 0.18 um wide copper wiring was isolated through the barrier metal film was observed. In Table 2, when a gap having a width of 0.01 μm or more is found at the interface between the copper and the barrier metal film, there is an erosion, and the width is 0.01 μm at the time when the gap is not observed or at the interface between the copper and the barrier metal film. When less than the clearance gap was confirmed, it was described as "(circle)" as having no erosion.

4.7.2d. Evaluation results

In Examples 12 to 18, the polishing rate for the copper film was sufficiently high at 7,000 angstroms / minute or more, and the polishing rate for the barrier metal film was sufficiently low at 10 angstroms / minute or less. Therefore, it turned out that the polishing selectivity with respect to a copper film is excellent.

In contrast, in Comparative Example 4, since the component (A) was not used, dishing, erosion and corrosion were deteriorated.

In Comparative Example 5, since the component (B) was not used, dishing, erosion and corrosion were deteriorated.

In Comparative Example 6, since the component (C) was not used, the polishing rate was very small, and flatness could not be evaluated.

In Comparative Example 7, since the component (D) was not used, the polishing rate was very small, and flatness could not be evaluated.

In Reference Example 2, since the component (E) was not used, the polishing rate was very small, and flatness could not be evaluated.

10... Glass substrate, 12... 20 recess for wiring. Barrier metal film, 30... Metal film

Claims (17)

(A) a compound represented by the following formula (1),
(B) at least one surfactant selected from alkylbenzenesulfonic acids, alkylnaphthalenesulfonic acids, α-olefinsulfonic acids and salts thereof,
(C) an abrasive grain, and
(D) amino acids
Aqueous dispersion for chemical mechanical polishing comprising a.
<Formula 1>

In Formula 1, R ¹ and R ² each independently represent a hydrogen atom, a metal atom, or a substituted or unsubstituted alkyl group, and R ³ represents a substituted or unsubstituted alkenyl group or sulfonic acid group (-SO ₃ X ) With the proviso that X represents hydrogen ions, ammonium ions or metal ions) The said (B) surfactant is 1 or more types chosen from alkylbenzene sulfonic acid, potassium alkylbenzene sulfonate, and ammonium alkylbenzene sulfonate, The alkyl group of the said surfactant is a substituted or unsubstituted C10-20 alkyl group. Aqueous dispersion for phosphorus chemical mechanical polishing. The aqueous mechanical dispersion for chemical mechanical polishing according to claim 1 or 2, wherein the (B) surfactant is at least one selected from dodecylbenzenesulfonic acid, potassium dodecylbenzenesulfonic acid, and ammonium dodecylbenzenesulfonic acid. The chemical mechanical polishing aqueous dispersion according to any one of claims 1 to 3, wherein the (C) abrasive grain is at least one selected from silica and organic inorganic composite particles. The aqueous mechanical dispersion for chemical mechanical polishing according to any one of claims 1 to 4, further comprising (E) an oxidizing agent. The chemical mechanical polishing aqueous dispersion according to claim 5, wherein the (E) oxidant is hydrogen peroxide. The aqueous mechanical dispersion for chemical mechanical polishing according to any one of claims 1 to 6, further comprising (F) an ammonium acid salt. 8. The aqueous mechanical dispersion for chemical mechanical polishing according to claim 7, wherein the ammonium acid salt (F) is ammonium amide sulfate. The chemical mechanical polishing aqueous dispersion according to any one of claims 1 to 8, which is used for polishing a wiring layer comprising copper or a copper alloy provided on a substrate for an electro-optical display device. The chemical mechanical polishing method using the chemical mechanical polishing aqueous dispersion of any one of Claims 1-9 in order to grind | wire the wiring layer containing copper or a copper alloy provided in the board | substrate for electro-optic display devices. A kit for preparing a chemical mechanical polishing aqueous dispersion composed from a first composition and a second composition,
The first composition is
(A) a compound represented by the following formula (1),
(B) surfactants,
(C) an abrasive grain, and
(D) comprises amino acids,
The second composition is a kit for producing an aqueous dispersion for chemical mechanical polishing (E) comprising an oxidizing agent.
<Formula 1>

In Formula 1, R ¹ and R ² each independently represent a hydrogen atom, a metal atom, or a substituted or unsubstituted alkyl group, and R ³ represents a substituted or unsubstituted alkenyl group or sulfonic acid group (-SO ₃ X ) With the proviso that X represents hydrogen ions, ammonium ions or metal ions) 12. The kit of claim 11, wherein the first composition further comprises (F) ammonium acid salt. A kit for preparing a chemical mechanical polishing aqueous dispersion composed from a third composition and a fourth composition,
The third composition comprises (C) an abrasive,
The fourth composition comprises (D) an amino acid,
At least one of the third composition and the fourth composition
(A) a compound represented by the following formula (1), and
(B) contains a surfactant,
The at least one of the said 3rd composition and the said 4th composition contains the (E) oxidizing agent, The kit for manufacture of the aqueous dispersion for chemical mechanical polishing.
<Formula 1>

In Formula 1, R ¹ and R ² each independently represent a hydrogen atom, a metal atom, or a substituted or unsubstituted alkyl group, and R ³ represents a substituted or unsubstituted alkenyl group or sulfonic acid group (-SO ₃ X ) With the proviso that X represents hydrogen ions, ammonium ions or metal ions) The kit of claim 13, wherein at least one of the third composition and the fourth composition further comprises (F) ammonium acid salt. A kit for producing a chemical mechanical polishing aqueous dispersion composed from a fifth composition, a sixth composition, and a seventh composition,
The fifth composition comprises (E) an oxidizing agent,
The sixth composition comprises (C) abrasive grains,
The seventh composition comprises (D) an amino acid,
At least one selected from the fifth composition, the sixth composition and the seventh composition is
(A) a compound represented by the following formula (1), and
(B) A kit for producing an aqueous dispersion for chemical mechanical polishing comprising a surfactant.
<Formula 1>

In Formula 1, R ¹ and R ² each independently represent a hydrogen atom, a metal atom, or a substituted or unsubstituted alkyl group, and R ³ represents a substituted or unsubstituted alkenyl group or sulfonic acid group (-SO ₃ X ) With the proviso that X represents hydrogen ions, ammonium ions or metal ions) The aqueous chemical mechanical polishing system according to claim 15, wherein at least one selected from the fifth composition, the sixth composition and the seventh composition further comprises (F) ammonium acid salt. Kit for preparing dispersions. The manufacturing method of the chemical mechanical polishing aqueous dispersion containing the process of mixing each composition of the kit for chemical-mechanical polishing aqueous dispersion manufacture of any one of Claims 11-16.

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