TW200952082A - Thermal processing apparatus, method for regulating temperature of thermal processing apparatus, and program - Google Patents

Abstract

There are provided a thermal processing apparatus, a method for regulating a temperature of a thermal processing apparatus, and a program, by which a temperature can be easily regulated. A control part 50 of a thermal processing apparatus 1 controls the apparatus so as to deposit SiO2 films on semiconductor wafers W, and judges whether the SiO2 films satisfy an in-plane uniformity. When the in-plane uniformity is not judged to be satisfied, the control part 50 calculates a temperature of a preheating part 23 by which temperature the in-plane uniformity can be satisfied. The control part 50 controls the apparatus so as to deposit SiO2 films on semiconductor wafers W under process conditions in which the temperature of the preheating part 23 has been varied into the calculated temperature, and the temperature of the preheating parts 23 is regulated. When the in- plane uniformity is judged to be satisfied, the control part 50 regulates temperatures of heaters 11 to 15 by the same procedure so as to satisfy an inter-plane uniformity.

Description

200952082 VI. Description of invention: [Reciprocal reference of relevant application] [0001] This application is based on the previous Japanese patent Shen Jingxing, and the application date is March 17, 2008. Α士室^案第2 〇〇8_67754, application date is 2008 lqh 4 application case number 2008-67755 蒎T Ming Η shoulder horse year March 17; Japanese patent application name, application period is 2009 i month η. 'A Ming case Priority No. 2009_11383 2009_11384 'Application deadline is 2009 i month G曰t'. The entire content of these applications is by reference method == case [Technical field to which the invention belongs] [0002] For the heat treatment device for heat treatment g, the temperature of the heat treatment device, [previous technique], use i type and film thickness [condition. by heat treatment. body nozzle: = ίί; ί, deposition gas In the manufacturing step of ^ mouth =, the heat treatment equipment has been used in the formula, in the formula φ, price is good - dangerous work, TcJ L - β», formula 'depending on the type of film to be deposited and film Thick [conditions. By heat treatment. The area has a tendency to decrease, The gp 祛 二 22 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二Thin in two kinds = pre ==== body to processing = thin on the circle _ thick &, $ product (four), Ke modified secret formed in the semiconductor crystal

[Patent Document 1] JP2003-209099A

[] <, oil g卩 makes it possible to reduce the thickness of the semiconductor wafer to be formed on the semiconductor wafer according to the predetermined processing conditions* when the canister is placed at the hot spot 200952082 = = The operator of the difference is based on experience and wisdom. ^ & ' 二 二 装置 装置 及 及 及 及 一致 一致 一致 一致 一致 一致 一致 一致 一致 一致 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到 达到The film thickness of the film formed on the semiconductor wafer can be easily adjusted. [Invention] The purpose of the present invention is to provide a program. ",, the temperature at which the county is placed and the heat is mixed. The miscellaneous method and the object i processing device comprise: a heating unit capable of accommodating a plurality of processing gases to be processed; and a processing gas supply supplied by the Yuan unit for processing the object to be processed to be stored in the ^^^ The processing conditions in the storage unit are: judging that the processing unit is configured to process the body temperature adjusting unit, and when the system is used, the calculation is performed by the pre-existing 元元千所一一一; ^ when the determination does not satisfy the in-plane uniformity In the plane of the foot, both are -,;; early === The temperature of the gas, by which the processing conditions stored in the full temperature element are included in the processing condition storage list, is judged by the processing unit and the processing chamber temperature adjusting unit's use: the result of the executed process, whether Satisfied when stored in the processing conditions 200952082, count = force 2 =: force surface „ ; when it is determined that the inter-plane uniformity is not satisfied: the temperature of the chamber is stored in the processing condition of the conditional storage unit: ~ one (10) rationale to • Degree 'has been changed to the calculated processing body adjustment unit: the temperature of the treated body at room temperature has been adjusted by the temperature of the treated gas. The temperature of the gas at the gas is the plane of the Ke Layu ^The result 'to judge ί:; ί pf . The month is processed to be divided into multiple areas, and the force 埶 g _ Γ 处 at the f room towel _ temperature reading processing

Li can tt't: the temperature adjustment method of the heat treatment device, the treatment, the pre-heating treatment of the gas in the Z before: ί;:=; to the processing condition of the unit, the storage of the processing strip The processing in the unit is stored in the method comprising: a process gas temperature adjustment step, including a step, early detection, whether the result of the process performed by 2 yuan satisfies the uniformity of the storage ^ plane, and when the determination does not satisfy the in-plane uniformity Sex ===兀中性, and purely contains the temperature of the processing gas heated by the preheating unit in the area, change the kg: the light treatment under the condition of the piece, and the temperature adjustment step of the processing chamber, including 200952082 : The processing degree can be satisfied by the temperature = under the condition that the processing system is in the following processing conditions, the processing degree of the single storage by the heating unit is adjusted, and the temperature processing step is processed. Room temperature ❹ ❹ 2 degrees "Whole:; Executive two == step _ 'Execution adjustment method. The shaft capacity of the county is the film deposition system. (4) The temperature of the heat treatment device = the processing chamber of the heat-treated object of Wenshu; the rib plus the secret room. The gas to the treatment chamber (4), the heating unit on the side of the second side; According to the system of meat, the preheating condition of the heat treatment gas includes the treatment of the heating by the added processing condition storage unit; the inner temperature of the chamber, and the preheating unit surface-to-sex field , the dish, the balance of the balance, and the 供 ” 供 供 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; Processing: processing: =:, the processing condition step stored in the processing condition storage unit, including the following error, the method includes: processing gas temperature adjustment does not satisfy the storage # Υ step. Determine the result of the process executed by the processing single handle Is the in-plane uniformity of the storage in the processing condition storage unit; and the degree, the lifetime of the processing gas heated by the preheating unit is determined by the temperature to satisfy the flatness, and the temperature is satisfied. Will be included in the processing Item 7 200952082 Storage: The temperature of the processing in the ' is changed to the calculated step of the processing gas temperature in the early stage, including the processing under the processing conditions; and the result of the process, whether the storage is satisfied = The temperature of the processing chamber executed by Yuan, in which n is heated by the single picking and heating, which is included in the fine matter f recorded under the condition of processing: the warm sound of the heated processing chamber, two: jin Storage, within the processing conditions, the processing gas has been executed by the heating unit, and the temperature of the processing chamber is calculated. After the ❹, the adjustment step is performed: two of them: the service step and the treatment The room temperature adjusting step is the other one. [19] The present invention is a processing chamber for heat-treating a human-object; for adding a plurality of to-be-treated gas to the processing chamber for processing. a unit for supplying a plurality of milk supply units on the gas supply unit; the processing U supply units respectively provided in the processing gas supply unit are used to include the conditions for heating and picking by the processing conditions Store Yuan, the inner temperature of the processing gas heated by the unit, the uniformity between the planes of the process by the preheating sheet, the in-plane uniformity of the crucible, and the treatment of the object to be treated under the condition The element in the storage unit is used to: determine that when the temperature of the processing gas is adjusted by the processing unit, calculate at least one of the uniformity between the preheating units and the temperature to satisfy the in-plane uniformity. And the individual temperature of the body of the body, wherein the temperature of the body is adjusted; and the heat of the process is adjusted, and is included in the processing unit, and the individual temperature added by the preheating unit is changed to the calculated position. The processing gas in the processing conditions is processed under the pain of 200952082 ssmuf. [_] * The heat device of the present invention The average film thickness of the processing unit; when it is determined: the gas temperature adjusting unit calculates 咕^孰^ satisfies = uniform film In the case of thickness, the treatment f _ borrowing _ temperature can satisfy the temperature of the individual warm ❹ 平 月 月 月 月 月 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' The next i line = the temperature of the gas, The treatment system can be set to change the processing area' and the heating unit can be added: the in-plane uniformity of the processing gas and the individual temperature of the process surface gas, and the processing conditions in the process.下▲理二于二(四)The process of 亍: fruit* body temperature adjustment step, the temperament between the thousand faces, and the process gas at least - the case of the second inner uniformity and the interplanar average The temperature can satisfy the individual temperature of the plane, and the temperature of the treated gas is changed to the temperature of the 200952082 g gas, respectively, so that the material to be treated is subjected to the changed processing conditions [OOj4], and the shaft capacity of the tree system is The heat treatment setting method of the air product process is set in the temperature adjustment method of the heat treatment device of the invention. The processing conditions in the storage and storage unit include the deposition on the object to be treated 2: flat 5 film 丨 = film thickness Condition; the condition of the processing film thickness in the processing gas temperature adjustment step ί; the temperature of the processing gas stored in the processing condition library unit and stored in the preheating unit by the preheating unit, respectively, is changed ί=Γ system _ ^^ Lo temperature of not setting member takes ⑽ health field, and the heating unit can be a method. The temperature adjustment method of the heat treatment device of each area is == ίί;: Γχ inside the heat treatment chamber is doubled =: at the processing gas 2, the package 3 force = the storage processing condition "= yuan Calculate the individual temperature of the preheating unit-heat treatment gas when the ί process is in the range of = degrees, W and processing (4) temperature departure steps, #determination is less than 10 200952082, at least one of the uniformity in the foot plane and the uniformity between the planes. Wherein the temperature can satisfy the in-plane uniformity and the inter-plane uniformity, and the temperature of the processing gas heated by the preheating unit in one of the processing components stored in the processing condition storage unit, respectively The temperature of the gas 'and the temperature of the process gas' is adjusted so that the process system is treated under the changed process conditions. [0028] The temperature can be easily adjusted according to the invention. [Embodiment] [〇03°] _ first EXAMPLES The following is an example for explaining the first embodiment, wherein the crucible treatment device of the present invention, the temperature adjustment method of the heat treatment apparatus, and the program are applied to the batch type vertical heat treatment of the diagram In this embodiment, by using, for example, chlorite, lion, SiH2Cl2, and nitrous oxide (dinitr〇gen, n2〇) as a film deposition gas, and in the semiconductor A Si〇2 film is formed on the wafer. [0031] As shown in Fig. 1, the heat treatment apparatus 本 in the present embodiment includes a reaction tube (processing chamber) 2 having a cylindrical shape on the top plate. The reaction tube 2 is disposed such that The longitudinal direction of the crucible is located in the vertical direction. The reaction tube 2 is made of a material having excellent heat resistance and excellent acid resistance such as quartz. ",, [〇〇32] The mountain is substantially cylindrical manifold 3 It is disposed below the reaction tube 2. The upper end of the manifold 3 and the lower end of the reaction tube 2 are hermetically joined to each other. The exhaust pipe 4 through which the gas in the reaction tube 2 is discharged is hermetically connected to the manifold 3. The exhaust pipe 4 is provided with a pressure adjusting portion 5 composed of, for example, a valve and a vacuum, whereby the inner side of the reverse wire can be adjusted to a desired pressure (vacuum degree;). [0033] The outer cover member 6 is disposed below the manifold 3 (reaction tube 2). The cover member 6 can be moved upward or downward by the boat elevator 7. When the outer cover member 6 is raised by the boat elevator 7 'the lower side of the manifold 3 (reaction tube 2) (the furnace opening portion) is closed, and when the outer cover member 6 is lowered by the boat elevator 7, the reaction tube 2 is The lower side (furnace opening) is opened. [0034] The boat 9 is disposed on the ten sides of the outer cover member 6 through the heat insulating tube (heat insulating member) 8.曰日舟9 is a crystal holder for the object to be treated, such as a semiconductor wafer. In this embodiment, the wafer boat 9 can accommodate a plurality of (for example, 15) semiconductor wafers W at a predetermined inter-wafer vertical pitch. By raising the cake 6 having the semiconductor crystal H, the miscellaneous mail w can be loaded to [0035] the heating portion 1 formed by, for example, a heating resistor is disposed around the reaction tube 2 The reaction tube 2 is surrounded. Since the heating portion 1 is turned on, the inner side of the reaction tube 2 can be heated to a predetermined temperature so that the semiconductor wafer w is heated to a predetermined temperature. Heat the five heaters U to 15 of the vertical. The electric controllers 16 to 20/knife are connected to the heaters U to 15. The inside of the independent 16 ^ 20 ; n ^ ί is partitioned by the heaters 11 to 15 into a process gas supply pipe 21 in which the processing gas is supplied to the reaction tube 2 by the ribs/3 provided with reference to FIG. The flow rate adjustment unit 22 and the miscellaneous portion 23. Mass flow controller (service s - c. coffee to f; processing gas;; fr will be supplied by processing gas Zhao) °J7], heat treatment device] included to control such as reaction suppression signal ίϊίίί t number ^^ 5 control, 5 "^ control 2 display control unit 5 〇 structure. 5 ° ° electric control 16 to 20. Figure

Tsl\ROM 5® ' ^Λ5ΤΖ 11 51 ' Connected busbars 5=^170璋55, coffee 56, and the temperature of these parts to each other by the heater η to 15 (corresponding to the temperature of 23 _ should be 1 inside temperature), and preheating type. Specifically, the model is stored; 51 is stored, === 12 200952082 The model of the relationship, and the details of the display preheating section 23 are explained below. A model of the relationship between the film thicknesses of 曰°W. These models are formulated to be based on the actual implementation of the film user performed by the heat treatment unit. The process recipe is designed to be loaded from the wafer W to the anti-potential " composition. The entire range begins with the variation from the semiconductor process, the process of the process, and the variability of the semiconductor wafer w from which it is unloaded. In addition, the timing of the supply of gas, and the difference in film thickness in the gas supply are uniform (single plane difference), and the average transfer planting _ uniformity (film thickness of the mosquitoes) The difference record ', the memory, or the hard disk formed by [〇〇42Γ. CPU 56, and the wheel gentleman rx> TT ^ + knife and the body flow rate measurement signal to Ϊ 6 to 20, flow rate adjustment unit 22, No. Part f (Electric controller ❿ 5冓t operates the heat treatment unit 1 from the operation panel %. Unit, central processing of the CPU of the central part (Central Processing shows the control of the heat treatment device i / based on the operation panel 58 The temperature in the film-type storage portion 51, the semiconductor crystallizer 11 to the thickness = is calculated to calculate the temperature of the portion 23, fn; 5c-- 23, so that the temperature becomes the calculated temperature. The temperature of rpnui J heat 52 11 rfs is updated to the calculated temperature. 1 degree and preheating section 23 13 200952082 Bus bar 57 transmits information between the parts. [0045] Then, the description is stored in the mold.模型 , , , , 模型 模型 模型 模型 模型 模型 模型 模型 模型 模型 模型 模型 模型 模型 模型 模型 模型 模型 模型 模型 模型 模型 模型 模型 模型 模型 模型 模型A model for the relationship between the temperature of the heaters 11 to 15 and the semiconductor 曰® 5 2; 12: iii Λ film thickness. The conductor 曰 circle W 'stores the temperature and half display of the display heater Ui 15: Heat 11 U (the following formula, as a model. _ age-old Γ ii body =!;, the body wafer W of the (four) amount of the mother of 4 (four) 1 c, semi-conductive CVD (QlemiCal Vapor Deposition, the reaction rate of film deposition and deposition (10) deposition rate) is determined by V = Axexp-Ea/kT . . . (1), and the reaction rate (film deposition rate) of A, 为Frequency factor, Ea is activation, ^^ wave^5 constant _tzmann's _tant), ^ τ is absolute temperature. ί iH) Responsibility such as sinking difficulty, and county case reaction order =) depreciation] by different Equation (1) is partially differentiated from temperature τ, and the following equation is obtained: d thickness / dt = thickness X Ea / kT2 (2) In the equation (7), the thickness of W on the left side is between the temperature and the film thickness. 'When the temperature of each of ί11 11 to 15 is changed, the second film is calculated. Based on the formula (2)', it can be calculated to achieve the desired thickness of the semiconductor wafer W. The temperature of the heaters 11 to 15. ^ 49j The nucleus of the relationship between the temperature of the preheating portion 23 and the film thickness of each semiconductor wafer w is shown to indicate that the temperature of the preheating portion 23 fluctuates by 1. , Jiu Ben: The model of the variation of the film thickness of the wafer w. Fig. 4 = Mo = real: Feng I 50] In general, when the temperature of the preheating portion 23 is raised, the tendency of the right layer of the film to deposit . This trend affects the film thickness of the film formed at the center of the semiconductor wafer w. 200952082

Degree, and the film thickness of the film formed at the edge thereof. Further, the placement position (region) of the semiconductor wafer w affects the film thickness of the thin film formed on the semiconductor wafer w. Then, as shown in Fig. 4, this model shows the variation in the film thickness of the film when the temperature of the preheating portion 23 is raised by 400 ° C, 500 C, 600 C, and 700 ° C. In more detail, this model shows the film thickness variation of the film formed at the center (Ctr) of the semiconductor wafer w and the edge of the center 150_. Further, this model shows the film thickness variation amount of the film formed on the semiconductor wafer W accommodated in each of the regions 1 to 5 (grooves). In the case where the temperature of the preheating portion 23 is other than the temperature written in the model (e.g., 550 C), the model can be used in such a manner as to obtain a weighted average of the film thickness variation data. In order to establish this model, when the conditions other than the temperature of the preheating portion 23 are maintained, the film is formed at the temperature of the variable portion 23. The thickness of each film is measured in the wafer, at the heart and at its edges, so that the variation in film thickness is calculated. For example, the temperature in the preheating section 23 is 7 (8). In the case of c, the temperature of ^ 23 was set at 695 Torr and 7 〇 5 ° C to form a film. Then, measure the film thickness of ^. By the difference between the film thicknesses 15 is the two-tone t heaters 11 to 15 and the preheating (10) i; when the model of the relationship between the two and the display of the heater degree, the relationship is sufficient for the film thickness Between the above mentioned models can be used; Bu == the thickness variation of the film thickness of the circle W. The setting value of the strip model may not be based on the processing of the ship to the software used to calculate the temperature. The Kaman filter _ surface film thickness and temperature model can be increased. For example, the ^ function 'make the software method as the one provided by the Karman filter's ί学=1? 5991525 =, the description uses one of the above; 4^ heat (9) to 15 tears _ 23 tearing plus 15 200952082 The temperature adjustment procedure can be performed simultaneously with the set-level deposition-free process performed prior to the aero-preservation process. Figure 5 is a diagram for explaining the temperature adjustment procedure. [〇〇55] The operator manipulates the operation panel S8 to select the type of the process for depositing the distillate and the nitrous oxide nitrite. Deposition Process (DCS-HTO)) and the target film thickness of the input Si〇2 film. The film of the S 2 film [〇〇56] has a limit between the knife and the clock in the film deposition process), the preheating portion 23 and/or the heaters n to 15 (temperature 6 〇 = , , 800 C), is expected In-plane uniformity (film in a single plane)

- Sex (film thickness between planes, thickness of flat 等, etc. V 〇r^ control 5〇 (CPU brother) determines whether the process type has been entered (step by recipe heart ^ 56 to determine that the required information has been entered (step S1) ; YES), CPU 56 S2) = 61521 The process recipe corresponding to the wheel-type layout of the wheel (step S2) is as shown in Fig. 6. The process recipe stores the general processing conditions for making Si〇2臈. Η using a milk Wei and - emulsified nitrogen sink [m 11 =, 'cpu 56 lowering the boat lift 7 (outer cover member 6), so that S outside I: half; measured, accommodated in at least each area 1 to The wafer boat 9 in 5 is 6) two loaded # after this 'CPU56 raises the boat lift 7 (the outer cover is constructed by the formula) to store the test wafer) to the reaction tube 2, then, the CPU 56 base speed adjustment department "The subroutine, the read recipe, and the control electric control portions 16 to 20, the flow step, and the pressure adjusting portion 5' cause the film 2 to be deposited on the test wafer (step = 1 after the accumulation of secrets) The CPU 56 lowers the wafer elevator 7 (the outer ί is fed through the thin P-type test wafer on which the Si 〇 2 film is placed. Then the CPU 56 "sinks the device (not shown), and uses the measuring device ρ: Ρ彳忒Β曰The film thickness of the S1〇2 film on the circle (step S4h, after the film thickness of the film of the measured circle t(10)2 is sent by the measuring device, the film thickness of the film of the measuring device is r〇〇6〇1 〇2 - the material to the heat treatment device 1 ( CPU56). When the film thickness data is measured and measured by the film thickness data of the Si〇2 film, the CPU 56 converts again (v step S5). As shown in Fig. 7, the film 16 of each of the measured films is measured. 200952082 ^ degree data shows up to nine points (that is, the thickness of the center point of the semiconductor wafer w. In this embodiment, the film thickness of the measured s_ is converted to two film thicknesses (also That is, the film thickness data of the semiconductor wafer and an edge thickness thereof. The thickness and thickness of the film are determined by the vt method, that is, formed on the semiconductor wafer ^ X - ❿ obtained from the received film thickness data. ("The approximate curve is obtained by [0062] followed by 'the calculated central film thickness d0 (ctr)' of the circle W and the edge thickness dl (Edj) of the rotating body 15〇mm. Then ^ The center of the body = W is converted into the film thickness data showing only the thickness of the two films (that is, the edge thickness) as shown in Fig. 9. (tr) and the plane in the side plane Uniformity (whether the in-plane uniformity, the judgment in the read recipe, the edge of the converted read thickness data _ ^ t, the difference in film thickness between the CPUs 56, whether it is smaller than the in-plane of the film thickness of the matching film (10) - Sex, and the difference in the in-plane film thickness of all the empty grooves in the formula of the calculated temperature is small = "= 2, which can calculate the difference in film thickness, and can make the plane of each empty groove endure, the stored plane The temperature of the interior 23 . That is, when the film thickness "in-plane" of each of the empty grooves in which the preheating portion is minimized is calculated, it is not necessary to consider the following, and the film thickness of each of the empty grooves can be greatly reduced; For example, adjusting the temperatures of the heaters 11 to 15 can be modified by the instructions described below. Then 'em56 will read the pair of 200952082 and the temperature of the returning section 23 (step S8), =- (four); yes), and the average film thickness (uniformity between planes | ± and the average plane The uniformity CPU 56 determines that the inter-plane mean-sex step (four) is not satisfied. When cpu56 calculates (adjusts) the heater u to 15^ degrees _S9; no), [0066] by obtaining the current film thickness 盥曰Λ by calculating the difference between the temperature variability of a heater The value, and 〇 = stored in the modulo storage portion 51; = 巧 3.07nm, and its average thick product A2 f is 2.57j blood, Edge thickness is <^ 5mn and the twister 15 is obtained, Tian (4) Thinking: f is shown by dividing 2\18(nm) by 0"(mn/c), by dislocation, which is 21·8 C. Thus, as shown in Fig. U, the temperature of 2u °c is higher than the current temperature of the heater 15, and after the similar steps, the temperature of each of the heaters 11 to 14 is changed (four): the temperature of the heat thief U to 14. Then, as shown in Fig. 12, the CPU 56 calculates the temperature of each of the heaters 11 in the recipe to be calculated as m (step = S8)' and returns to step S3. When the CPU 56 determines that the thick scale has been made (step S9; YES), the CPU 56 terminates the process. According to the present embodiment, the temperature of the heaters η to 15 and the temperature of the preheating portion 3 can be adjusted only by the input process type and the target film end degree to achieve deposition on the semiconductor crystal. The film thickness uniformity of the Si〇2 film on the surface of the circle w can still be adjusted to an operator who is not skilled in the heat treatment apparatus and heat treatment, and [0069] further, according to the present embodiment, the & 2 18 200952082 The in-plane uniformity of the film is from the preheating part 23 (the average film thickness) from the heater u to the 'house = the whole room = the temperature, the temperature of the hot HU to 15 and the brewing part; J Both and i should be listed, and various variations of the present invention [00711 are finer than other embodiments of the present invention.

Ming, in the evaluation has been proposed - the situation as an example to illustrate the hair i! 5 adjust the temperature of the pre-f part 23, adjust the heater U 孰 ds write ds. , ,,, and only the temperature adjustment of the preheating section 23 and the addition of the G 11 to 15 materials. For example, the temperature of the preheating portion 23 can be adjusted after the adjustment is increased by 1 degree. In the above example, the film thickness of the measured sleeve has been proposed

The case of Ct. ii is taken as an example to illustrate the present invention. However, in the case of not converting the film thickness data of the 11 to & ί temperature, the preheating portion 23 and the heater application 11' can be adjusted. The heat treatment device has been proposed to form the h shape of the (10)2 film as an example. The invention will be described. However, the present invention can be applied to various oxidizing apparatuses such as (4) skirting two == buying type to form another type of film. ϊ 074] In the above embodiments, it has been proposed to adjust the film thickness of the film of the film deposited by the film as an example. υ The results of the process, such as depth, , reflectivity, mosaic properties, and step coverage in the process of impure amplification, are presented in the present invention. The invention can be applied to a double tube structure 3, a heat treatment device, in a miscellaneous structure towel, the reaction f 2 is from f. Further, the number of heaters can be selectively set (the number of test crystals from the f region of the region). Further, the present invention

,. Further, it can be applied to an age TM substrate, a glass substrate, and a PDP 19 200952082. The control unit 5 in the present embodiment can be implemented not only by a limited use but also by a general computer system. For example, the control unit 50 for executing the aforementioned process can be constructed by installing a program for executing the aforementioned process in a multi-purpose computer from a storage program, such as a floppy disk or a CD-ROM. [〇〇77 ] It is rotatable on the wire-type device. It can be provided by the media of the job. Alternatively, it can be supplied through programs such as communication lines, communication networks, and systems. In this case, the program can be displayed. It is used on the communication network _etin board system (BBS), and can be provided through the communication secret by superimposing on the carrier. Similar to the other lung type, the aforementioned procedure is performed under the control of the operating system_. [Second Embodiment] The second embodiment is proposed to explain the second embodiment. In the second embodiment, the processing device of the present invention, the temperature adjustment method of the heat treatment device, and the program are applied to the vertical heat treatment device. In the actual cleaning towel, (4) use, for example, two = township 12) and - oxidation As a film deposition gas, a SiO 2 film is formed on the bulk wafer. [1] 079] As shown in _13, the heat treatment apparatus 1 in the present embodiment includes a substantially (column) top (four) reaction tube ( Processing chamber) 2. The reaction tube 2 is disposed such that its length 2 is oriented in the vertical direction. The reaction tube 2 is made of a material such as quartz having good heat resistance and good corrosion resistance. The manifold 3 is disposed below the reaction tube 2. The manifold and the lower end of the reaction unit 2 are hermetically joined to each other. The exhaust pipe 4 through which the gas of the reaction tube is discharged is hermetically connected to the manifold. 3. The exhaust pipe 4 is provided with a pressure adjustment consisting of a stone door and a vacuum pump. 5, whereby the pressure can be reversed to the required pressure (vacuum degree = 1). The cover member 6 is disposed under the manifold 3 (reaction tube 2). The cover member 6 = the boat lift 7 is up or Moving downwards. #The outer cover member 6 is the lower side of the boat lifter 7' manifold 3 (reaction tube 2) (the mouth part is, and the cover member 6 is lowered by the boat lifter 7, the reaction tube 2 The lower side (furnace opening) is opened. 20 200952082 _2] The boat 9 series passes through the insulation pipe (above the insulation structure. The boat 9 is accommodating (holding) such as the semiconductor two placed on the outer-member 6 circular support. In this embodiment, the wafer boat 9 can be a crystal of the object to be processed, for example, a plurality of semiconductor wafers w. By the second, the vertical spacing is accommodated around the circumference to surround the reaction tube 2 ο hot portion H) The vertical lake fiber plus (four) heat f temperature. Add to 20 respectively to connect to the heating = to ^ ^ 5 5 household system Μ, to 20, can independently heat the heater „ 到到到 =: a heater 11 to丨5 is divided into the following parameters: yi has a supply of gas to the plurality of bodies in the reaction tube 2. The body is provided with a three-dip body for 9 Side Extending to a portion close to "❹=斤11?" The process gas supply pipe 22a extends from the side of the manifold 3 to the center portion (CTR) of the boat 9. The process gas supply pipe 23a extends from the side of the manifold To the portion close to the bottom (BTM) of the boat 9. The processing gas supply pipe 2laD3a has the flow rate adjusting portion % to , and the preheating portions 27a to 29a, respectively. The flow rate adjusting portion 2 is as described to each of them. a flow rate controller (mass flow controller, which is used to adjust the flow rate of the processing gas of each of the gas supply pipes 21a to 23a. Pre-; each of them is connected, for example, by a surrounding The outside of the quartz container of the mother of the gas supply pipe 21a = 23a is formed by winding a heater. The electric controller is shown connected to each of the preheating portions 27a to 29a. The controller ' can independently heat the preheating portions 27a to 29a to a desired temperature by independently supplying electric power to each. In the case where the flow rate is adjusted to the required flow rate by the flow rate adjusting portions 24a to 26a, respectively, and the temperature thereof is respectively heated to the required temperature by the preheating portion 23, the heat treatment (4) inclusion body will be performed by 21 200952082 The yarn is supplied to the reaction tube 2. The controller, the pressure adjusting portion, and the full force, and the preheating portion m to the electric circuit 2 show the electric controllers 构造 to 2 of the configurations U to 15 of the control portion 50. Connected _W埠55, CPU 56, and _partially interchangeable. The model for calculating the relationship between the temperature at which the temperature of the preheating portion is expected to be applied and the thickness of each of the highlights ''if storage portions 51 from the display preheating portion 27a to the tear film description/day film thickness is stored. This model stores the recipe recipe for your fine and decisive control steps for the implementation of the ribs. The Weifang is for the round w to be loaded into the square. _ In the 3 whole _ = the temperature variation tube of each part is formed by the ?= 〇 accumulation of each touch surface (four) different), and the uniformity (plane) The difference in film thickness between the film is recorded by the body, or the hard disk, 54 works like the area of the CPU 56. cpu L = 埠 for the measurement of temperature, pressure, and gas flow rate to the front part 1 Electrically controlled states 16 to 20, flow rate adjusting sections 24a to 26a, 55':, dampers, etc.). The fine plate 58 is connected to the I/O. The author operates the heat treatment device by the face panel 58. 22 200952082 CPU (Central Processing executes the recipe recipe stored in the rQM53 towel storage unit 52/, and controls the operation of the heat treatment device.; & refers to the finger from the age panel 58) CPU 56 * is stored in In the model storage unit 51, the model thickness of the model 'Fusion I*曰0 W, and the type of the 丨 丨 甲 甲 + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + + The preheating section of the preheating section 祝 至 至 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 The model of the relationship shows the k-isolation of the sub-degrees of each semiconductor W film when preheating the thick-cured 1C. Figure 14 shows an example of the model. 11〇^]-Generally When the temperature of the preheating portions 27a to 29a is raised, the film has id:: this tendency affects the film thickness of the film formed at the center of the semiconductor wafer w, and the film thickness of the film formed at the edge thereof. Further, the semiconductor wafer The placement position (series) f is the film thickness f formed on the semiconductor wafer W, so as shown in FIG. This model shows the amount of variation in thickness of the film when the temperature of each of the preheating portions 27a to 29a is increased by 400 c, (:, 6G0eC, and 700 ° C. More specifically, this The die face shows the film thickness variation of the film formed at the center (Ctr) of the semiconductor wafer and at the edge (4) (b) of the center 150 nm. Further, the model is shown to be formed in the regions i to 5 (empty) The film thickness variation amount of the film on the semiconductor wafer w in each of them. In the case where the temperature of the preheating portions 27a to 29a is other than the temperature written in the model (e.g., 55 〇〇 c) The model can be used by obtaining a weighted average of the film thickness variation data. [0096] In order to generate this model, in the case of the strip 23 200952082 1 outside the temperature of the preheating portions 27a to 29a, When the temperature of the preheating portions 27a to 29a is changed, the film thickness of each of the * films is measured at the crystal core and its edge, so that the ΓΤο ί 2 thickness: ? variation amount is calculated. For example, in the preheating portion In the temperature of the coffee, the temperature of the preheating section 29a is set at 695 ° C and 705 Ϊ for critical adjustment. The hot part is washed to the temperature of 29a, when the preheating section wishes to 29a Ο = the variation of the film thickness of the body Japanese yen W, and the various values other than the above model can be used. The default value of some models may not be processed according to the method. The stripe fLii = iti then increases the extended Kaman filter (the ability to apply for the film's thick production, to give it the learning function, so that the soft body method 91525 revealed the k part la sT, 5 children: month - The method of adjusting the temperature of the pre-dumping system by using the heat treatment device 1 constructed above (temperature adjustment program). The temperature adjustment procedure can be performed at the same time as the film deposition process M^fe(DCS-HTO), and the target film of the Si〇2 film. L process I has the conditions, the operator can control the operation surface: in-plane ===== sex (film thickness difference between planes), average film thickness and so on. r ' ] Sentence [_] First, the control unit 5 〇 (α > υ 56) judges whether or not the process type has been input (step 24 200952082 = ^17 56 determines that the required information has been input (step s 1; YES), CPU 56 ς力. 'Guozi Neighbor & read the process recipe corresponding to the input process type (shown in step 1, the process recipe stores the general treatment using dioxane and nitrous oxide > SiO2 film) Condition L. After ip·, the CPU 56 lowers the boat elevator 7 (the cover member 6) so that the wafer boat 9 that accommodates the semiconductor wafer W (test wafer) in the outer 5 is placed. Thereafter, the CPU 56 raises the boat elevator 7 (the outer cover member 己 方 ΪΓ ( π (test wafer) into the reaction tube 2. Then, the CPU 56 controls the pressure adjustment unit based on the recipe read by the 15 ray ^uR ^ The heaters 14 to 26 of the heaters 29a, the flow rate adjusting portions 24a to 26a, and the preheating portions 27a to "01041 ί °, so that the Si 〇 2 film is deposited on the test wafer (step S3). _ er lift 7 (external transfer knows Gong ^ ^ 2 film on the test wafer. Then cpu 56 measured deposition in the 3 device (not time J amount test crystal After the film thickness is measured, the film thickness data of the device is measured to the heat treatment device 1 (CPU56). ^Thickness i data is less than the measured film thickness data of the Si〇2 film, the CPU 56 converts ❹SI step ^ edge point) measured 'half-body wafer W-center point and eight thickness _ _ if if. In this embodiment, the measured _ 臈 film round-heart thickness - Mengdu The value of the film thickness is obtained from the film thickness of the obtained film thickness. That is, the approximation curve is represented by =F; the two-person equation (Y=aX2+b), and 8 shows 'near the calculated empty slots ===== 25 200952082 200952082 The center of the paste wafer W 15 〇 mm edge film shows that only the film thickness data shown in f is converted into Figure 18 The film thickness 卩, - _ degrees ((9) and - edge thickness (_ ί JutJ ^ ! 6) °1 ί Ο 岐 满足 满足 满足 满足 满足 满足 满足 满足 满足 满足 满足 满足 满足 满足 满足 满足 满足 满足 满足 满足 CPU CPU CPU CPU CPU CPU CPU CPU CPU CPU CPU CPU CPU CPU CPU CPU CPU CPU 8] § CPU 56 determines that the in-plane uniformity, the inter-plane uniformity, and the flatness of the ^^(/) can satisfy the in-plane average-temperature. = cattle The degree of calculation is thick and the thickness of the center of the temperature groove of each of the semiconductor wafer w preheating portions 27a to 29a is thick, and the temperature of the hot portion 27a to 29a is obtained by calculating the space (3)曰A &...the degree of brewing makes each pre-minimum minimize, while satisfying the limitation of the difference between "inner = _; u = film ^. Uniformity between the ten sides, and the average film thickness [0110] After that, the CPU 56 will be stored in the 4th 29a of the stagnation just 26 200952082 full ^ plane uniformity, leveling uniformity, and average film sound When the __, YES, the CPU 56 finishes reading. The film of the degree 4 is on the second side, and according to the embodiment, the film thickness of the (10) 2 film is uniform only by the type of the wheel process and the thickness is ίί:=. Therefore, the operator who is unskilled in the county and the heat treatment, and the test (4) are all tpt-ming and are not limited to the foregoing embodiments, and the various modifications of the present invention can be implemented in other ways.

The embodiment of the present invention has been proposed as an example to illustrate that in the present case, when any of the in-plane uniformity, the inter-plane uniformity, and the ΐ: and 厗ii control conditions are not satisfied, the adjustment is made. The temperature of the hot portion 27a 129a. The temperature of the preheating portions 27a to 29a is adjusted by the ί ί 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Wafer w < film thickness uniformity of Si 〇 2 film on the recording surface. 97 S on In the above embodiment, it has been proposed that the number of preheating portions a to 9a provided in the heat treatment apparatus is 3 The present invention will be described. However, the number of preheating portions can be set to, for example, 2 or 4 or more. Further, the number of heaters (the number of regions) and the The number of test circles picked out by each region. ^0115] In the above embodiments, it has been proposed that the film thickness of the measured Si〇2 film is converted as an example to illustrate the present invention. However, no conversion is performed. In the case of the film thickness data of the Si〇2 film of the I film, the temperature of the preheating portions 27a to 29a can be adjusted. [0116] In the above embodiments, the Si〇2 film system has been proposed by using two gas. The case where Shi Xiyuan and nitrous oxide are deposited is taken as an example to illustrate the present invention. However, this can be It is applied to the case of depositing a SiN film by using dioxane and ammonia (NH3). [0117] In the above embodiment, it has been proposed that a heat treatment apparatus is used to form a film of SiO 2 27 200952082 as a real case. The invention can be applied to various batches of heat such as CVD apparatus and oxidizing means for forming another type of film. [0118] In the above embodiment The invention has been proposed to adjust the film thickness of the film deposition process as an example to illustrate the invention. The diffusion concentration, the rate, the inlay, and the step in the diffusion process of the impurity. In the embodiment of m α, a batch heat treatment device having a single-tube structure has been proposed, in which the reaction tube 2 is composed of an inner tube and is applied to a recording medium (for example, a floppy disk). , CD-ROM) installed in the multi-purpose computer, program, can constitute the control unit to perform the above-mentioned process%. " pure silk red health can be thrown. Supply program, or through, for example, communication lines, communication networks And the type 1 can display _ in the communication network. 细 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 This can be performed by starting the program under the above-mentioned "OlL'1, and under (4) of the job secret (QS). [0122] The present invention helps to adjust the temperature of the heat treatment device. [Simplified illustration] [ Figure 1 shows the construction of a first embodiment of a heat treatment apparatus according to the present invention. Figure 2 shows a structural example of the control unit shown in Figure 1. Figure 3 shows the area in the reaction tube. The relationship between the film thicknesses. Figure 5 is a flow chart for explaining the temperature adjustment procedure. 28 200952082 Figures 6(a), 6(b)' and 6(c) show examples of process recipes. Figure 7 shows the measured Si〇2_film thickness f. Figure 8 illustrates the conversion of film thickness data. Figure 9 shows an example of converted film thickness data. 10(a) and 10(b) illustrate the temperature adjustment of the preheating section. Figure 11 illustrates the temperature variation of the heater. Figure 12 illustrates the temperature adjustment of the heater. Figure 13 shows the construction of a second embodiment of the heat treatment apparatus according to the present invention. system

Figure 15 shows the relationship between the temperature of the preheating section and the film thickness of each semiconductor wafer. Fig. 15 is a flow chart for explaining the temperature adjustment procedure. Figures 16(8), 16(b), and 16(c) show examples of process recipes. Figure 17 shows an example of the film thickness data of the measured Si〇2 film. Figure 18 shows an example of converted film thickness data. 19(8), 19(b), and 19(8) illustrate the temperature adjustment of the preheating section.

[Description of main component symbols] 1 Heat treatment device 2 Reaction tube 3 Manifold 4 Exhaust pipe 5 Pressure adjustment unit 6 Cover member 7 Boat lift 8 Insulation tube 9 Boat 10 Heating unit 11 Heater 12 Heater 13 Heater 14 Heater 29 200952082 15 Heater 16 Electric controller 17 Electric controller 18 Electric controller 19 Electric controller 20 Electric controller 21 Process gas supply pipe 21a Process gas supply pipe 22 Flow rate adjustment section 22a Process gas supply pipe 23 Preheating section 23a Process gas supply pipe 24a Flow rate adjustment unit 25a Flow rate adjustment unit 26a Flow rate adjustment unit 27a Preheating unit 28a Preheating unit 29a Preheating unit 50 Control unit 51 Model storage unit 52 Recipe storage unit 53 ROM 54 RAM 55 I/O埠56 CPU 57 Bus 58 Operation Panel W Semiconductor Wafer

Claims (1)

200952082 VII. Patent application scope: A heat treatment device comprising: a processing chamber 'accommodating a plurality of objects to be treated; a heating unit 'for heating the inside of the processing chamber; and two processing gas supply units for supplying a treatment Gas into the processing chamber. A preheating unit for heating the Wei Li gas before the supply of the processing gas to the riding chamber; the secret is: the storage unit according to the Process content storage location_piece, section ο The inner side of the processing chamber heated by the heating unit is stored in the temperature of only the system: the temperature of the process: the process of the process The processing strip in the processing condition storage unit, the processing gas and the temperature adjusting unit, is configured to: determine whether the result of the flat=two-pass process satisfies the temperature of the processing gas heated by the storage unit ❹ unit stored in the processing condition, By the 兮; the heat_heat, will be heated by the preheating unit: the surface of the coating: the temperature of the tempering treatment is changed to the K:i degree and the degree is made to be uniform between the objects to be treated; Judge The plane of the inter-plane uniformity I is not satisfied and the temperature production of the processing chamber is adjusted, "the uniformity between the slanting planes; the temperature of the ahai processing chamber. * 1 is more the calculated 31 200952082 2· The heat treatment device of the first item of the benefit range, I. Although the visibility of the process gas is determined by the process. 2 == the process of the process performed under the condition; = ΐ: ί, • Sex. The adjustment unit is based on the plane that is adjusted by the it process, 'whether the temperature satisfies the plane of the process ^ _ the processing gas = system ^ ^ _1 item read _ set, its __ capacity is - chess 4. Such as ^ patent 'The heat of the county is set in the county. The Shai processing room is divided into a plurality of areas; and ^. The heating unit can individually set the temperature of each area in the processing chamber. 5.- Heat treatment device a temperature adjustment method, ·,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The supply of storage conditions to the processing conditions - processing conditions storage unit, such as ship-based Content storage = heating _ temperature, == including the temperature of the heating unit, the process - the in-plane uniformity, the heating rationality, and the storage in the processing conditions ^-Inter-plane - the processing unit of the object to be processed; the error in the pre-existing condition under the conditional processing method includes: _ - processing gas temperature adjustment step, including the following = the result of the executed process, whether the storage is satisfied ???=================================================================================================== The temperature of the processing gas contained in the processing condition is changed to 32, 200952082, and the processing is performed under the condition of room temperature; and the process is performed: 3⁄4 the whole step: judging that the processing unit is between the planes - And when the heating unit in the processing condition storage unit heats the property, the uniformity between the faces is calculated, and the adjustment is performed: the temperature is satisfied under the condition of the parallel processing. The system to be treated is The temperature of the processing chamber heated by the processing chamber stored in the processing condition storage unit is changed, and the processing gas temperature adjusting step and the processing chamber_adjusting step are performed. The whole step of the towel (4) processing the temperature step and the temperature of the A chamber 6. M. = the temperature adjustment method of the heat treatment device of item 5, i. Adjusting the processing gas temperature adjustment step, executing the processing chamber Among them, 7.5 of them read the county's financial method, and the private valley is a film deposition process. The temperature observation method of the five reading positions is processed to be divided into a plurality of areas; and, the heating unit can individually set the temperature of each area in the processing chamber. a gas supply unit; for processing the gas to be supplied by the processing gas; the unit is ili;;; 33 200952082, the processing gas preheating unit; according to - the temperature of the heating, the domain is independent - the plane Both: - body-in-plane uniformity, and process conditions under the condition of processing i. physical condition remaining. The method includes: a process gas temperature adjustment step, including the following steps - where the unit meets the plane均均性, and will be included in the processing condition of the processing element within the processing condition by the preheating unit: the temperature stored in the calculated processing gas, the temperature of the body , becomes the right thing in the changed place; ^ = = 'the result of the process' is satisfied with the storage material processing Γ the temperature of the processing chamber heated by the heating unit it “t ^, Calculating the uniformity between the faces, and adjusting the temperature of the processing chamber to satisfy the processing condition: the heating unit included in the processing body and the processing condition in I 3 The temperature of the heated chamber is increased to the temperature of the calculated processing chamber The temperature to be treated is changed to a heat treatment device that has performed a process gas temperature adjustment step, comprising: - a processing chamber capable of accommodating a plurality of objects to be treated; - a heating unit for heating the inside of the processing chamber 34 10. 200952082 a plurality of processing gas supply units, a plurality of surface units, wherein m is to be processed into the processing chamber; the thermal unit is used to read the pre-communication room on the supply unit, and the heating scale should be read early Supply processing gas supply processing strip; storage processing conditions, the heart ==: ❹ Execution ί ϊϊ: degree' is used to: determine the uniformity of the flat element plane of the processing unit The plane is uniform: the 丨, 疋, 疋 do not satisfy the individual temperature of the processing gas heated by the element, and the pre-heating single-sided uniformity and the inter-plane uniformity can satisfy The temperature in the processing condition storage unit that is heated by the early enthalpy, is included in the individual temperature, and the changed if, so that the object to be processed is adjusted in the changed j. ·If you apply for patent coverage number 10 The heat treatment device, the process content is a film deposition process. /, τ 12. The heat treatment device of the first paragraph of the patent scope of the application, wherein the body of the Γΐ ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί ί The individual temperature of Zhao, by which the condition of the inter-plane uniformity and the average film thickness can be surface-heated: the production of the processing gas heated by the preheating unit contained in the member of the member 35 200952082 The temperature of the process gas is changed; ί : , , 使 使 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. 13. The area and the heating unit can set the temperature of each area of the green (four) towel. 14. One can accommodate the number of turns t. The heat of the room is two: two, the element is used to supply the treatment = room = 3⁄4 The heating chamber is heated by the unit;; = body = other temperature, one of the processes is in the plane: sex 2: (2) ^; 2 === 5 conditions in the condition storage unit ❹ The method includes: a step of judging that the processing unit satisfies the word _—Sex and the plane of the process m fruit '疋不平# Min unsatisfied words _ all = and = individual temperature 'the ί ΐ 度: 工工' makes the 36 200952082 u as claimed in the 14th article The process content is - Finance. And a temperature method of the method, wherein the heat of the item 14 of the patent application is stored in the processing condition storage unit, the 2 degree adjustment method, wherein the average film thickness of the deposited film on the body; the μ processing condition includes the to-be-processed Things. In the judgment step, it is further determined in step I whether the result of the preparation is equal to the condition of the average film thickness, and the system is executed in the process gas temperature adjustment step, and the condition is determined by the Pre-teaching list ^ The average film thickness can satisfy the temperature of the J body in the plane by the temperature, and the internal temperature of the processing gas which is different by the processing gas processing condition heated by the preheating unit = two Further, the treated material system is subjected to the modified processing temperature such that the processing chamber of the heat treatment apparatus of claim 14 is divided into a plurality of regions; and again. Jade, 8th The heating unit can set the temperature of each domain in the processing chamber. In the case of 'execution-heat treatment, the chamber is for Jii: points:: the complex number on the processing gas supply unit = 1 storage condition - processing condition storage unit, the processing condition includes The individual temperature of the t, the process-plane 2 37 200952082; the condition and the processing unit for storing the object to be processed stored in the processing condition; " a judging step of judging whether the processing unit is full of the in-plane uniformity of the process and the process=the fruit, whether the second process gas temperature adjustment step, when the determination does not satisfy the ^=birth; - at least - when calculating, by the preheating list ^ = 1 and the flat:: temperature, wherein the temperature can be satisfied by the temperature; the body' and will be included in the processing condition storage unit The temperature of the process gas heated by the 〇'箕2 preheating unit is divided into 处理 ϊΐ 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 理 38