200946471 九、發明說明： 【發明所屬之技術領域】 ' 本發明涉及一種導電膜的製備方法，尤其涉及一種透 明導電薄臈的製備方法。 【先前技術】 透明導電薄膜係指對可見光的光透過率較高，電導率 高且電阻率低的薄膜。自1907年Badker報導了通過濺射 録並使之熱氧化形成氧化編製備出透明導電薄膜以來，透 ® 明導電薄臈的研究受到普遍重視。隨著科學的不斷發展， 奚免J-薄..膜在應晶摸屏、電致變色器件、飛機 熱窗、除霜玻璃等領域起著重要的作用。 旧 j I 一~^~***~ - ···.戈 目前，透明導電薄膜的製備方法主要包括蒸發法、濺 射法等方法。蒸發法、濺射法屬於玻璃深加工方法，設備 複雜、成本較高、不適合大規模生產。且，由於採用上述 方法形成透明導電薄膜時，均需經過一個較高的退火過 程，對透明導電薄膜的基底造成損害，無法於熔點較低的 ^ 基底上形成，限制了透明導電薄膜的應用，請參見 M Influence of Atomic Hydrogen on Transparent Conducting Oxide During Hydrogenated Microcrystalline Si Preparation by PECVD ” ， Chen Yongsheng » Journal of200946471 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a method for producing a conductive film, and more particularly to a method for preparing a transparent conductive thin crucible. [Prior Art] A transparent conductive film refers to a film having a high light transmittance to visible light, a high electrical conductivity, and a low electrical resistivity. Since 1970, Badker reported on the preparation of transparent conductive films by sputtering and thermal oxidation to form oxidized copolymers. With the continuous development of science, the J-thin film is playing an important role in the fields of Yingjing screen, electrochromic device, aircraft hot window and defrosting glass. Old j I ~~~~***~ - ····. Currently, the preparation method of transparent conductive film mainly includes evaporation method, sputtering method and the like. The evaporation method and the sputtering method belong to the glass deep processing method, and the equipment is complicated, the cost is high, and it is not suitable for mass production. Moreover, since the transparent conductive film is formed by the above method, a higher annealing process is required, which damages the substrate of the transparent conductive film and cannot be formed on the substrate having a lower melting point, thereby limiting the application of the transparent conductive film. See M Influence of Atomic Hydrogen on Transparent Conducting Oxide During Hydrogenated Microcrystalline Si Preparation by PECVD ” , Chen Yongsheng » Journal of
Semiconductors，Vol28，P1005(2007) ° 先前的透明導電薄膜為銦錫氧化物透明導電薄膜。銦 錫氧化物具有良好的導電性和透光性，且其在常溫下以固 態形式存在，易於實現透明導電薄膜的圖形化，因此銦錫 氧化物透明導電薄膜成為需要圖形化的透明導電薄膜的 6 200946471 器件如觸摸屏等中最常用的導電膜。圖形化的銦錫氧化物 '透明導電薄膜的製備方法為採用蒸發法、濺射法等方法於 ,基底的表面首先形成一層銦錫氧化物透明導電薄膜，然後 通過離子刻蝕等方法，於銦錫氧化物透明導電薄膜的表面 形成圖樣。這種圖形化銦錫氧化物透明導電薄膜的製備方 法由於需要一個較高能量的刻蝕過程，對刻蝕的設備要求 較南，操作複雜，成本較高，且由於高能量產生較高的溫 度，因此同樣存在著對基底要求較高，無法於熔點較低的 基底上形成的缺點，另外，上述製備圖形化銦錫氧化物透 明導電薄膜的過程中，由於使用到強驗性溶液或氮氣酸溶 液對其進行預處理或後處理，會對環境造成一 不利於環保。 有鐘於此’提供—種對基底不會造成損害，應用範圍 I圖开作簡單’對環境不會造成污染，適合大規模生 產圖形化透明導電薄膜的製備方法實為必要。Semiconductors, Vol28, P1005 (2007) ° The previous transparent conductive film was an indium tin oxide transparent conductive film. Indium tin oxide has good conductivity and light transmittance, and it exists in a solid form at normal temperature, and is easy to realize patterning of a transparent conductive film. Therefore, the indium tin oxide transparent conductive film becomes a transparent conductive film that requires patterning. 6 200946471 The most commonly used conductive film in devices such as touch screens. The method for preparing the patterned indium tin oxide transparent conductive film is to form an indium tin oxide transparent conductive film on the surface of the substrate by evaporation or sputtering, and then indium by ion etching or the like. The surface of the tin oxide transparent conductive film is patterned. The method for preparing the patterned indium tin oxide transparent conductive film requires a higher energy etching process, requires less etching equipment, has complicated operation, higher cost, and generates higher temperature due to high energy. Therefore, there is also a disadvantage that the substrate is required to be formed on the substrate having a low melting point, and in addition, in the process of preparing the patterned indium tin oxide transparent conductive film, a strong solution or a nitrogen acid is used. Pre-treatment or post-treatment of the solution may cause environmental degradation. There is a clock provided here that does not cause damage to the substrate, and the application range I is simple to make 'no pollution to the environment. It is necessary to prepare a large-scale production method for a transparent conductive film.
【發明内容】 一圖形化的透明導電薄膜的製備方法，其包括 :驟：提供-奈米碳管陣列；從奈米碳管陣列中拉取獲： ^層奈米碳管薄膜；提供—支稽體，將上述 用管，附於支撐體上形成-奈米碳管薄膜： 束以_ = 度為1G嶋·1(Κ3_瓦7平方毫㈣雷射光 路徑照射太rt米/秒的掃描速度按照形成預定的圖形的 令形碳官薄膜結構的表面，於奈米碳管薄膜結構 部分盘形’·將奈米碳管薄膜結構中形成預定圖形的 /、其他部分分離，形成圖形化的透明導電薄臈。 7 200946471 與先前技術比較，本發明所提供的圖形化透明導 -膜的製備方法具有以下優點：其一，圖形化透明導電薄臈 Ί製備方，中’奈米碳管薄膜結構為直接從陣列中拉取獲 得’無需高溫過程，故該透明導電薄膜對基底不會造成 害，可方便應用於各種領域；其二，該圖形化透明導電薄 膜的製備方法操作簡單，無需強驗性溶液或氫氟酸溶液， 對環境不會造成污染，適合大規模生產。 【實施方式】 © 下面將結合附圖及對本技術方案的具體實施例作進 一步的詳細述明。 明參考圖1’本技術方案提供一種圖形化透明導電薄 膜的製備方法，其包括以下步驟： (一）提供一奈米碳管陣列。 本實施例中，所述奈米碳管陣列為一超順排奈米碳管 陣列，該超順排奈米碳管陣列的製備方法採用化學氣相 沈積法’其具體步驟包括：提供—平整基底，該基底可 選用P型或N型石夕基底，或選用形成有氧化層的石夕基底， 本實施例優選為採用4英寸的矽基底；於基底表面均勻 形成一催化劑層，該催化劑層材料可選用鐵（pe)、鈷 (Co)、鎳（Ni)或其任意組合的合金之一；將上述形成 有催化劑層的基底於700_900。(：的空氣中退火約3〇分鐘 _90分鐘，·將處理過的基底置於反應爐中，在保護氣體環 境下加熱到500-74(TC，然後通入碳源氣體反應約5 3〇 分鐘，生長得到超順排奈米碳管陣列，其高度為2〇〇 4〇〇 微米。該超順排奈米碳管陣列為複數個彼此平行且垂直 8 200946471 於基底生長的奈米碳管形成的純奈米碳管陣列。通過上 '述控制生長條件，該超順排奈米碳管陣列中基本不含有 -雜質，如無定型碳或殘留的催化劑金屬顆粒等。該奈米 故管陣列中的奈米碳管彼此通過凡德瓦爾力緊密接觸形 成陣列。 本實施例中碳源氣可選用乙快等化學性質較活潑的 碳氫化合物，保護氣體可選用氮氣、氨氣或惰性氣體。 (二）從上述奈米碳管陣列中拉取獲得至少一奈米碳 ❹管薄膜。 步驟（二）具體包括以下步驟：從上述奈米碳管陣列 中選疋一疋寬度的複數個奈求碳管片斷，本實施例優選 為採用具有一定寬度的膠帶接觸奈米碳管陣列以選定一 定寬度的奈米碳管片斷；以一定速度沿基本垂直于奈米 碳管陣列生長方向拉伸該奈米碳管片斷，以形成一連續 的奈米碳管薄膜。 ^ 上述拉伸過程中，該複數個奈米碳管片斷在拉力作用 ❹下沿拉伸方向逐漸脫離基底的同時，由於凡德瓦爾力作 用，該選定的奈米碳管片斷分別與其他奈米碳管片斷首 尾相連地連續地被拉出，從而形成一奈米碳管薄膜。 、，請參見ffi 2,該奈米碳管薄膜為定向延伸的複數個奈 米碳管片斷首尾相連形成的具有一定寬度的奈米碳管薄 膜。該奈米碳管片斷包括複數個平行且長度相同的夺米 碳管。該奈米碳管薄臈中奈米碳管沿同一方向擇優取^ =伸’丁、米石反g的延伸方向基本平行于奈米碳管薄膜的 9 200946471 關，哕太半$„ /碳官陣列所生長的基底的尺寸有 ，L?二:膜的長度不限，可根據實際需求制得。 ，實：:中採用4英寸的基底生長超順排奈米碳管陣 二;薄膜的寬度可為1董米_10爱米，該奈米 厌g溥膜的厚度為1奈米_1〇微米。 (三）提供一支撐體，將上述至少一 附於支撐體上，形成一太半磁Aπ ^寻犋枯 ❿风奈水奴管薄膜結構，並去除支撐 ©體外的夕餘的奈米碳管薄膜結構。 九本實施例中，該支撐體為透明基材，也可以為其他任 忍基材，其具體形狀不限’可以支樓奈米碳管薄膜結構 即可，優選地，該支撐體為一方形的聚酯樹脂（PET )支 撐體。該支撐體的大小可依據實際需求確定，當支撐體 的寬度大於上述奈米碳管薄膜的寬度時，可將複數個上 述奈米碳管薄膜並排覆蓋並粘附於支撐體上。 ❹ 由於本實施例步驟一中提供的超順排奈米碳管陣列 中的奈米碳管非常純淨，且由於奈米碳管本身的比表面 積非常大，所以該奈米碳管薄膜本身具有較強的粘性， 該奈米碳管薄膜可利用其本身的粘性直接粘附於支 可以理解，上述支撐體也可選用一框架結構，上述奈 米碳管薄膜可利用其本身的粘性直接粘附於固定框架， 使奈米碳管薄膜的四周通過固定框架固定，該奈米碳管 薄臈的中間部分懸空。 上述奈米碳管薄膜可重疊地粘附於支撐體上，相鄰的 200946471 奈米碳管薄膜中奈米碳管的延伸方向之間形成一爽角 • (X，且由於隨著奈米碳管薄膜結構厚度的增 .加，奈米碳管薄膜結構的透光性逐漸降低，因此奈米碳 管薄膜結構厚度不易太厚’本實施例中，奈米碳管薄膜 結構的厚度為10奈米-100微米’優選地，該奈米碳管薄 膜結構的厚度為10奈米_1微米。 請參見圖3，本實施例提供一種由1〇層奈米碳管薄 膜相互重疊形成的一奈米碳管薄膜結構，該奈米碳管薄 ©膜結構中，相鄰兩層奈米碳管薄膜中的奈米碳管的延伸 方向形成的夾角為90。。 可選擇地，當奈米碳管薄膜結構包括複數層交又奈米 碳管薄臈時，還可進一步包括一使用有機溶劑浸潤奈米 碳官薄臈結構的步驟。該使用有機溶劑浸潤的步驟可通 過試管將有機溶劑滴落於奈米碳管薄膜結構表面浸潤整 個奈米碳管薄膜結構，或者，也可將上述形成有奈米碳 管薄膜結構的支撐體整個浸入盛有有機溶劑的容器中浸 ❹潤。該有機溶劑為揮發性有機溶劑，如乙醇、甲醇、丙 _、一氯乙烧或氯仿等，本實施例中採用乙醇。複數層 交又的奈米碳管薄膜結構經有機溶劑浸潤處理後，在揮 發，有機溶劑的表面張力的作用下，奈来碳管薄膜結構 中每一層奈米碳管薄膜中首尾相連的奈米碳管會部分聚 集成奈米碳管束，該奈米碳管束又交叉形成複數個微孔 結構，其中微孔直徑為i奈米4微米。經有機溶劑處理 後，奈米碳管薄膜結構失去粘性，形成一自支撐的奈米 碳管薄膜結構’更方便于實際應用。 11 200946471 (四）採用10000-100000瓦/平方毫米的雷射光束以 800-1500毫米/秒的速度按照形成預定的圖形的路徑照射 •奈米碳管薄膜結構的表面，於奈米碳管薄膜結構中形成預 定的圖形。 所述採用雷射光束照射奈米碳管薄膜結構的表面的 過程具體包括以下步驟： 首先，提供一可由電腦程式控制的雷射器，該雷射器 的雷射光束的照射路徑可通過電腦程式控制。 •本實施例中，雷射器的雷射光束為二氧化碳雷射光 束。 其次確定好透明導電薄膜所需要的圖樣，輸入電腦程 式中’使雷射器中的雷射光束沿可形成該圖樣的路徑照 射。 通過預先確定圖樣的方式，可實現批量化製備 誓从立 1 於產業化生產 帛後’開啟雷射器’使-定功率的雷射光束以一定的 速度從正面直接照射奈米碳管薄膜結構的表面。經雷射照 2後’處於雷射照射路徑處的奈米碳管薄膜結構被雷射刻 於不米石厌官薄膜結構的表面形成預定的圖形 結構分為兩個部分，一部分為可形成圖形化透 明導電薄膜的奈米碳管薄膜結構，另一部分為不 形化透明導電薄膜的剩餘的奈米碳管薄膜結構。 實例中雷射光束的功率密度為loonooooo 實施例掃描速度為800-1500毫米/秒。優選地，本 '，雷射光束的功率密度為70000-80000瓦/平方毫 12 200946471 米，掃描速度為1000-1200毫米/秒。上述雷射光束功率密 度和掃描速度’可在雷射光束照射奈米碳管薄膜結構的瞬 間切割奈米碳管薄膜結構，不會對基底造成傷害，因此， 該奈米碳管薄膜結構的基底材料可選擇任意材料，擴大了 透明導電薄臈的應用範圍。 、 可以理解’本技術方案中還可以Μ雷射光束，通過 電腦程式控制和移動奈米碳管薄膜結構 薄膜結構的表面刻蝕所需圖樣。 、不未碳吕SUMMARY OF THE INVENTION A method for preparing a patterned transparent conductive film includes: providing: a carbon nanotube array; extracting from a carbon nanotube array: a layer of carbon nanotube film; providing a branch For the body, the above-mentioned tube is attached to the support to form a carbon nanotube film: the beam is scanned with a _ = degree of 1 G 嶋 · 1 (Κ 3 watt 7 square millimeters (four) laser light path is too rt m / sec The speed is in accordance with the surface of the carbonaceous film structure forming a predetermined pattern, and the disk portion of the carbon nanotube film structure is formed in the shape of the carbon nanotube film, and the other portions are formed into a predetermined pattern to form a pattern. Transparent conductive thin film. 7 200946471 Compared with the prior art, the method for preparing the patterned transparent conductive film provided by the present invention has the following advantages: First, the pattern of transparent conductive thin crucible preparation, medium 'nanocarbon tube film The structure is directly drawn from the array to obtain 'no high temperature process, so the transparent conductive film does not cause damage to the substrate, and can be conveniently applied to various fields; secondly, the method for preparing the patterned transparent conductive film is simple to operate, no A strong solution or a hydrofluoric acid solution is required, which does not cause pollution to the environment, and is suitable for mass production. [Embodiment] Hereinafter, specific embodiments of the present technical solution will be further described in detail with reference to the accompanying drawings. The present invention provides a method for preparing a patterned transparent conductive film, which comprises the following steps: (1) providing a carbon nanotube array. In this embodiment, the carbon nanotube array is a super-aligned array. The carbon nanotube array, the preparation method of the super-sequential carbon nanotube array adopts a chemical vapor deposition method, and the specific steps thereof include: providing a flat substrate, the substrate may be selected from a P-type or N-type Shi Xi substrate, or In the present embodiment, a 4 inch germanium substrate is preferably used; a catalyst layer is uniformly formed on the surface of the substrate, and the catalyst layer material may be iron (pe), cobalt (Co) or nickel (Ni). Or one of the alloys of any combination thereof; the substrate on which the catalyst layer is formed is annealed in 700-900. (: air for about 3 minutes - 90 minutes, the treated substrate is placed in a reaction furnace, The gas is heated to 500-74 (TC, and then the carbon source gas is reacted for about 53 minutes, and the super-sequential carbon nanotube array is grown to have a height of 2〇〇4 μm. The super-sequence The carbon nanotube array is a pure carbon nanotube array formed by a plurality of carbon nanotubes which are parallel to each other and perpendicular to the base layer of 200946471. The super-sequential carbon nanotube array is basically obtained by controlling the growth conditions. It does not contain - impurities, such as amorphous carbon or residual catalyst metal particles, etc. The carbon nanotubes in the array of nanotubes are in close contact with each other to form an array by van der Waals force. In this embodiment, the carbon source gas can be selected as B. Quickly wait for more chemically active hydrocarbons. The protective gas may be nitrogen, ammonia or an inert gas. (2) At least one nano carbon nanotube film is obtained by drawing from the above carbon nanotube array. The step (2) specifically includes the following steps: selecting a plurality of carbon nanotube segments of a width from the carbon nanotube array, and preferably using a tape having a certain width to contact the carbon nanotube array to select a certain A carbon nanotube segment having a width; the carbon nanotube segment is stretched at a rate substantially perpendicular to the growth direction of the carbon nanotube array to form a continuous carbon nanotube film. ^ In the above stretching process, the plurality of carbon nanotube segments are gradually separated from the substrate in the stretching direction under the pulling force, and the selected carbon nanotube segments are respectively combined with other nanoparticles due to the van der Waals force. The carbon tube segments are continuously pulled out end to end to form a carbon nanotube film. Please refer to ffi 2, which is a carbon nanotube film with a certain width formed by the end-to-end extension of a plurality of carbon nanotube segments. The carbon nanotube segment comprises a plurality of carbon nanotubes that are parallel and of the same length. The carbon nanotubes in the thin carbon nanotubes are preferentially taken in the same direction. The extension direction of the m-extension and the anti-g of the rice stone is substantially parallel to the carbon nanotube film of 9 200946471, and the 哕 too half $„ / carbon The size of the substrate grown by the official array is L? 2: the length of the film is not limited, and can be obtained according to actual needs. Actual:: 4 inch substrate is used to grow super-sequential carbon nanotube array 2; The width may be 1 to 10,000 meters, and the thickness of the nano 厌 溥 film is 1 nanometer 〇 〇 micrometer. (3) providing a support body, attaching at least one of the above to the support body to form a The semi-magnetic Aπ ^ seeks the structure of the thin water film of the Nippon Water, and removes the structure of the carbon nanotube film supporting the outer surface of the outer layer. In the present embodiment, the support is a transparent substrate, and may be other Ren Ren base material, the specific shape thereof is not limited to 'can be used for the carbon nanotube film structure. Preferably, the support body is a square polyester resin (PET) support. The size of the support body can be based on actual The requirement is determined that when the width of the support body is larger than the width of the above-mentioned carbon nanotube film, a plurality of The carbon nanotube film is covered side by side and adhered to the support. ❹ Since the carbon nanotubes in the super-sequential carbon nanotube array provided in the first step of the present embodiment are very pure, and because of the carbon nanotube itself The specific surface area is very large, so the carbon nanotube film itself has strong viscosity, and the carbon nanotube film can be directly adhered to the branch by its own viscosity, and the support body can also adopt a frame structure. The above carbon nanotube film can be directly adhered to the fixing frame by its own viscosity, and the periphery of the carbon nanotube film is fixed by a fixing frame, and the middle portion of the thin carbon nanotube is suspended. The above carbon nanotube film Can be overlapped and adhered to the support, forming a refreshing angle between the extending directions of the carbon nanotubes in the adjacent 200946471 carbon nanotube film (X, and due to the increase in thickness of the carbon nanotube film structure) Adding, the light transmittance of the carbon nanotube film structure is gradually reduced, so the thickness of the carbon nanotube film structure is not too thick. In the present embodiment, the thickness of the carbon nanotube film structure is 10 nm to 100 μm. Ground The carbon nanotube film structure has a thickness of 10 nm to 1 μm. Referring to FIG. 3, the present embodiment provides a carbon nanotube film structure formed by overlapping one layer of carbon nanotube film. In the thin film structure of the carbon nanotubes, the extending direction of the carbon nanotubes in the adjacent two layers of carbon nanotube film forms an angle of 90. Alternatively, when the carbon nanotube film structure includes a plurality of layers, When the carbon nanotubes are thinner, the method further comprises the step of infiltrating the nanocarbon carbon thin crucible structure with an organic solvent. The step of infiltrating the organic solvent can drop the organic solvent on the surface of the carbon nanotube film structure through a test tube. The whole carbon nanotube film structure is infiltrated, or the support body formed with the carbon nanotube film structure may be immersed in a container containing an organic solvent, and the organic solvent is a volatile organic solvent such as ethanol. , methanol, propylene ketone, chloroethane or chloroform, etc., ethanol is used in this embodiment. The carbon nanotube film structure of the plurality of layers is treated with an organic solvent infiltration, and under the action of volatilization and surface tension of the organic solvent, the end-to-end nanometer in each layer of the carbon nanotube film in the carbon nanotube film structure The carbon tube is partially aggregated into a carbon nanotube bundle, which in turn crosses to form a plurality of microporous structures, wherein the micropore diameter is i nanometer 4 micrometers. After treatment with an organic solvent, the structure of the carbon nanotube film loses its viscosity, forming a self-supporting carbon nanotube film structure, which is more convenient for practical use. 11 200946471 (4) Using a laser beam of 10,000-100,000 watts/mm 2 to illuminate the surface of the carbon nanotube film structure at a speed of 800-1500 mm/sec in a predetermined pattern, on the carbon nanotube film A predetermined pattern is formed in the structure. The process of irradiating the surface of the carbon nanotube film structure with the laser beam comprises the following steps: Firstly, a laser controlled by a computer program is provided, and the laser beam of the laser can be illuminated by a computer program. control. • In this embodiment, the laser beam of the laser is a carbon dioxide laser beam. Next, the pattern required for the transparent conductive film is determined and entered into the computer program to cause the laser beam in the laser to be illuminated along a path that can form the pattern. By predetermining the pattern, the batch preparation can be realized. After the industrial production, the 'laser is turned on' so that the laser beam of the constant power directly irradiates the carbon nanotube film structure from the front side at a certain speed. s surface. After the laser irradiation 2, the structure of the carbon nanotube film at the laser irradiation path is laser-engraved on the surface of the non-meterite film structure to form a predetermined pattern structure, which is divided into two parts, and a part is formed into a pattern. The carbon nanotube film structure of the transparent conductive film is formed, and the other part is the remaining carbon nanotube film structure which does not shape the transparent conductive film. The power density of the laser beam in the example is loonooooo. The scanning speed of the embodiment is 800-1500 mm/sec. Preferably, the laser beam has a power density of 70,000-8,000 watts/square millimeter, 12,2009,46,471 meters, and a scanning speed of 1000-1200 mm/second. The above-mentioned laser beam power density and scanning speed can cut the structure of the carbon nanotube film at the moment when the laser beam is irradiated onto the carbon nanotube film structure without causing damage to the substrate, and therefore, the substrate of the carbon nanotube film structure The material can be selected from any material, which expands the application range of the transparent conductive thin crucible. It can be understood that the laser beam can be used in the technical solution to control and move the surface of the film structure of the carbon nanotube film structure by a computer program. Not without carbon
(五）將奈米碳管薄膜結構中形成狀圖形的部分與 其他部分分離，形成圖形化的透明導電薄臈。 將雷射照射後的奈米碳管薄膜έ士播番认 泡首$太w时 吸言溽膜釔構置於一溶劑中浸 ^至^管薄膜結構與支禮體脫離，由於溶劑浮力的 作用，奈米碳管薄膜社槿中取士、猫〜m 阳子刀的 八\ 寻膜結構史形成預定圖形的部分盥其他邻(5) Separating the portion formed in the structure of the carbon nanotube film from the other portions to form a patterned transparent conductive thin crucible. After the laser irradiation, the carbon nanotube film is used to discriminate the bubble. When the first w is too w, the film is immersed in a solvent and immersed until the film structure is separated from the ritual body due to solvent buoyancy. The role of the carbon nanotube film in the community of the scorpion, the cat ~ m Yangzi knife's eight \ film structure history to form part of the predetermined pattern 盥 other neighbors
刀分離開，將奈米碳管薄膜姓禮由 、、P 溶劑中取出…冓中成預定圖形的部分從 導撐體分離的獨立的圖形化的透明 導電4膜。该溶劑包括水、 溶劑為丙酮。 ㈣次乙醇專，本實施例中， 管結構中透明導㈣腔機械剝離方法直接去除奈米碳 法。其具體方法包括.、=鑷要^/分，域子爽取的方 預定圖形的部分從支擇體上結構中 得到的圖形化透明導電薄臈採用上述方法 可以採用鑷子夾取奈米碳管薄 ：/可：理解’也 的其餘部分，將其從^ '、、、"籌令形成預定圖形部分 明導電薄膜。採用上迖：剝離’從而形成圖形化的透 上述方法得到的圖形化的透明導電薄膜 13 200946471 形成於支撐體上。 被雷當支樓體採用固定框架時，雷射照射之後, 化的透^薄膜結構會自動脫離，形成圖形 化的透明導電薄膜。 ::::術比較，本發明所提供的圖形化透明導電薄 具有二下優點：其-’圖形化透明導電薄膜 ' ，奈米碳管薄臈為直接從陣列中拉取獲得， …、需高溫過程’故該透明導電薄膜對基底不會造成損害， :方便應用於各種領域；其二，該圖形化透明導電薄膜的 製備方法操作簡單，無需㈣性減或氫驗溶液，對環 境不會造成污染，適合大規模生產。 ❹ 採用本技術方案所提供的方法可以於透明導電薄膜的表 面製備出任何所需要的圖形，圖形的圖樣可以由電腦程式 设計，圖形的準確率高，利用聚焦的雷射光束，可以使圖 樣的寬度在0.2毫米以下，滿足圖形化的透明導電薄膜對 圖形精確度的要求；由於圖形可以通過電腦程式設計，因 此重複性好，且操作簡單，快速可實現量產。 麵上所述’本發明確已符合發明專利之要件，遂依法 k出專利申請。惟，以上所述者僅為本發明之較佳實施例， 自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝 之人士援依本發明之精神所作之等效修飾或變化，皆應涵 蓋於以下申請專利範圍内。 200946471 【圖式簡單說明】 - 圖1係本技術方案實施例的圖形化透明導電薄膜的製 •備方法的流程圖。 圖2係本技術方案實施例的奈米碳管薄膜的掃描電鏡 照片。 圖3係本技術方案實施例的奈米碳管薄膜結構的掃描 電鏡照片。 【主要元件符號說明】 φ 無The knife is separated, and the carbon nanotube film is removed from the solvent, and the P-solvent is taken out to form a separate patterned transparent conductive film separated from the guide body by a portion of the predetermined pattern. The solvent includes water and the solvent is acetone. (4) Sub-ethanol special, in this embodiment, the transparent conductive (four) cavity mechanical stripping method in the tube structure directly removes the nanocarbon method. The specific method includes:, = 镊 ^ ^ / min, the portion of the predetermined pattern of the domain is obtained from the patterned transparent conductive thin layer obtained from the structure of the selected body. The above method can be used to take the carbon nanotubes with the tweezers Thin: / Can: Understand the rest of the ', also from ^ ',,, " to form a predetermined pattern to show the conductive film. A patterned transparent conductive film 13 200946471 obtained by the above method is formed on the support by using the upper layer: peeling. When the fixed frame is adopted by the Leidang branch, after the laser irradiation, the formed transparent film structure will be automatically separated to form a patterned transparent conductive film. :::: In comparison, the patterned transparent conductive thin film provided by the invention has two advantages: it is a 'patterned transparent conductive film', and the carbon nanotube thin layer is directly drawn from the array, ... High-temperature process 'The transparent conductive film does not cause damage to the substrate. It is convenient to be used in various fields. Second, the method for preparing the patterned transparent conductive film is simple to operate, and does not require (four) reduction or hydrogen test solution, and does not affect the environment. Causes pollution and is suitable for mass production. ❹ The method provided by the technical solution can prepare any desired pattern on the surface of the transparent conductive film, and the graphic pattern can be designed by a computer program, and the accuracy of the graphic is high, and the laser beam can be used to make the pattern The width is less than 0.2 mm, which satisfies the requirement of graphic precision of the transparent transparent conductive film; since the graphic can be designed by computer, it has good repeatability, simple operation and rapid mass production. The invention described above has indeed met the requirements of the invention patent, and the patent application was filed according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application in this case. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the present invention are intended to be included in the scope of the following claims. [Brief Description of the Drawings] - Fig. 1 is a flow chart showing a method of preparing a patterned transparent conductive film according to an embodiment of the present technical solution. Fig. 2 is a scanning electron micrograph of a carbon nanotube film of an embodiment of the present technical solution. Fig. 3 is a scanning electron micrograph of the structure of a carbon nanotube film of an embodiment of the present technical solution. [Main component symbol description] φ
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