TW200943567A - Silicon-based thin film solar-cell with super-lattice P type semiconductor layer - Google Patents

Silicon-based thin film solar-cell with super-lattice P type semiconductor layer

Info

Publication number
TW200943567A
TW200943567A TW097112049A TW97112049A TW200943567A TW 200943567 A TW200943567 A TW 200943567A TW 097112049 A TW097112049 A TW 097112049A TW 97112049 A TW97112049 A TW 97112049A TW 200943567 A TW200943567 A TW 200943567A
Authority
TW
Taiwan
Prior art keywords
semiconductor layer
type semiconductor
lattice
super
cell
Prior art date
Application number
TW097112049A
Other languages
Chinese (zh)
Inventor
Yen-Zhi Yang
Yung-Chieh Chien
Original Assignee
Contrel Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Contrel Technology Co Ltd filed Critical Contrel Technology Co Ltd
Priority to TW097112049A priority Critical patent/TW200943567A/en
Publication of TW200943567A publication Critical patent/TW200943567A/en

Links

Classifications

    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Abstract

The present invention discloses a silicon-based thin film solar-cell with a super-lattice P type semiconductor layer. It mainly comprises a substrate; a first transparent conductive film; a super-lattice P type semiconductor layer; an amorphous i-type semiconductor layer; an amorphous N type semiconductor layer; a second transparent conductive film and an electrode. The super-lattice P type semiconductor layer can modulate the bandgap to increase the overall wavelength range of light absorption to improve the efficiency of the disclosed solar cell.
TW097112049A 2008-04-02 2008-04-02 Silicon-based thin film solar-cell with super-lattice P type semiconductor layer TW200943567A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW097112049A TW200943567A (en) 2008-04-02 2008-04-02 Silicon-based thin film solar-cell with super-lattice P type semiconductor layer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW097112049A TW200943567A (en) 2008-04-02 2008-04-02 Silicon-based thin film solar-cell with super-lattice P type semiconductor layer

Publications (1)

Publication Number Publication Date
TW200943567A true TW200943567A (en) 2009-10-16

Family

ID=44869044

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097112049A TW200943567A (en) 2008-04-02 2008-04-02 Silicon-based thin film solar-cell with super-lattice P type semiconductor layer

Country Status (1)

Country Link
TW (1) TW200943567A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103346192A (en) * 2013-07-23 2013-10-09 常州天合光能有限公司 Novel heterojunction solar cell

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103346192A (en) * 2013-07-23 2013-10-09 常州天合光能有限公司 Novel heterojunction solar cell
CN103346192B (en) * 2013-07-23 2015-09-09 常州天合光能有限公司 A kind of novel heterojunction solar battery

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