TW200943426A - Thin film forming method, plasma film forming apparatus and storage medium - Google Patents

Thin film forming method, plasma film forming apparatus and storage medium

Info

Publication number
TW200943426A
TW200943426A TW98102601A TW98102601A TW200943426A TW 200943426 A TW200943426 A TW 200943426A TW 98102601 A TW98102601 A TW 98102601A TW 98102601 A TW98102601 A TW 98102601A TW 200943426 A TW200943426 A TW 200943426A
Authority
TW
Taiwan
Prior art keywords
film forming
subject
thin film
section
forming method
Prior art date
Application number
TW98102601A
Other languages
Chinese (zh)
Inventor
Takashi Sakuma
Tatsuo Hatano
Yasushi Mizusawa
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200943426A publication Critical patent/TW200943426A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)

Abstract

Provided is a thin film forming method wherein an overhang section is prevented from being formed in the vicinity of an opening section of a recessed section on the surface of a subject to be processed, and as a result, the inside of the recessed section is filled without generating pinch-off and voids. The film forming method has a film forming step of ionizing generated metal particles, while sputtering a metal target (96) composed of a high melting point metal; taking the ionized metal particles onto a surface of the subject (2), which is to be treated by being placed on a placing table (60) and has a recessed section (8) on the surface; and depositing a thin film including the high melting point metal. The subject is maintained in a state where the subject is heated to a flow temperature where the thin film being deposited generates a flow. Thus, the overhang section is prevented from being formed in the vicinity of the opening section of the recessed section on the surface of the subject by generating surface diffusion.
TW98102601A 2008-01-30 2009-01-22 Thin film forming method, plasma film forming apparatus and storage medium TW200943426A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008019574A JP2009182140A (en) 2008-01-30 2008-01-30 Method of forming thin film, device for plasma deposition and storage medium

Publications (1)

Publication Number Publication Date
TW200943426A true TW200943426A (en) 2009-10-16

Family

ID=40912454

Family Applications (1)

Application Number Title Priority Date Filing Date
TW98102601A TW200943426A (en) 2008-01-30 2009-01-22 Thin film forming method, plasma film forming apparatus and storage medium

Country Status (3)

Country Link
JP (1) JP2009182140A (en)
TW (1) TW200943426A (en)
WO (1) WO2009096095A1 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5347868B2 (en) * 2009-09-24 2013-11-20 東京エレクトロン株式会社 Mounting table structure and plasma deposition apparatus
KR102383703B1 (en) 2016-03-05 2022-04-08 어플라이드 머티어리얼스, 인코포레이티드 Methods and apparatus for controlling ion fraction in physical vapor deposition processes
CN116438326B (en) * 2020-11-06 2024-04-12 饭塚贵嗣 Film forming apparatus, film forming unit, and film forming method

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63202040A (en) * 1987-02-17 1988-08-22 Mitsubishi Electric Corp Manufacture of semiconductor device
JP2725944B2 (en) * 1991-04-19 1998-03-11 インターナショナル・ビジネス・マシーンズ・コーポレイション Metal layer deposition method
JP2806757B2 (en) * 1993-09-29 1998-09-30 日本電気株式会社 Method for manufacturing semiconductor device
JPH09171976A (en) * 1995-10-27 1997-06-30 Internatl Business Mach Corp <Ibm> Method and device for making coating film capable of thick film control adhere to side face and bottom part of high aspect ratio feature
US6139699A (en) * 1997-05-27 2000-10-31 Applied Materials, Inc. Sputtering methods for depositing stress tunable tantalum and tantalum nitride films
JP2000144405A (en) * 1998-11-16 2000-05-26 Shimadzu Corp Thin film forming device
JP4021601B2 (en) * 1999-10-29 2007-12-12 株式会社東芝 Sputtering apparatus and film forming method
JP2006148074A (en) * 2004-10-19 2006-06-08 Tokyo Electron Ltd Method of depositing film and equipment for plasma-deposing film
JP5023505B2 (en) * 2006-02-09 2012-09-12 東京エレクトロン株式会社 Film forming method, plasma film forming apparatus, and storage medium

Also Published As

Publication number Publication date
JP2009182140A (en) 2009-08-13
WO2009096095A1 (en) 2009-08-06

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