200941587 九、發明說明： 【發明所屬之技術領域】 本發明關於在半導體工件上沈積金屬層的系統，更具 體地說，這個系統用於從電解液中電沈積或化學沈積金屬 薄膜到半導體晶圓上，化學方法刻蝕部分沈積膜，清洗沈 積膜表面以及對沈積膜進行熱處理。 Φ 【先前技術】 晶片間的互聯由多層金屬線達成，這些金屬線包埋於 位於邏輯器件或記憶體件電晶體電路上方的一種或多種 絕緣材料中。隨著超大型積體電路中線密度的增加，金屬 線互連圖形的特徵尺寸，如通孔和溝槽等，已經降低到亞 微米級，金屬化程度也隨之增加。而且，隨著積體電路中 互連引線長度的增加，RC延遲也已經成爲影響電路傳輸 速度的最主要因素。銅由於其較低的電阻率和較高的抗電 Ο 遷移’被認爲是金屬互連引線的理想材料。但是同時，它 也面臨著很多器件製造的挑戰。 達成銅互連技術，最大的挑戰在於透過大馬士革工 藝，或者通常是透過加工成本可接受的雙大馬士革工藝， 在整個半導體基材上，也就是在整片晶圓上，對通孔和溝 槽等結構達成無孔、無缝的均勻填充。 典型的電沈積系統通常由多個用於金屬電沈積或化 學沈積的電链單元和用於鍍後清洗和邊緣去除的清洗單 ' 元組成。 5 200941587 專利US6258220和專利US652792〇揭示了這種電鍵系 統的例子。這種系統包含一備有傳送機械手的主框架，一 與主㈣相連Mm個與Μ架相連的電錄單元^ 多個與主框架相連的旋轉-沖洗-乾燥和邊緣去除腔，以及 一和裝載埠相連的快速熱處理子系統。 曰剛I c生産中所 用的電沈積系統的電鍵單元、旋轉—沖洗—乾燥和邊緣去 除腔及其它可能附加單元都處於同一平面上，這種設計佔 據了超淨間的很大空間’才能滿足這種工藝系統對生産能 力的要求。 因爲這種系統用到的是-個二維的結構，它將所有的 工藝單元都置於-個平面上’當需要添加一些新的工藝單 元時，系統佔地面積增大’因而限制了其實際可擴展性。 此外，在上述電沈積系統中，還需要多個立於工藝腔基底 上的永久的重型支撐柱，用於支撑多個電鍍單元上$裝 置，該裝置從機械手接收晶圓並將其送入電解液。這些支 ❹ 撐柱體積較大，因爲它們需要爲它們所支撐的上部裝置提 供足夠的穩定性和堅固性，以便精確控制其運動。這些支 樓柱不僅㈣了框架㈣空間，而i限制了主㉟架傳送機 械手，晶®固持裝置和電料㈣可料性，並給系統維 護帶來不便。 此外，隨著晶圓圖形中通孔和溝槽尺寸的減小，當由 晶圓固持裝置所固持的晶圓浸入電解液時，晶圓上的結構 报難被完全浸濕，從而導致沈積金屬膜結構上產生缺陷和 空洞。一個潤濕晶圓的典型方法如專利us 2004/0069644 6 200941587 和US 2007/7223323所述，在電鍍前將晶圓在一個另外 的旋轉-沖洗-乾燥單元中預潤洗。另—個潤濕晶圓的方法 如專利US 2006/7146994所述，在晶圓送入電鍍液之前， 用一個附加的喷嘴向晶圓表面上噴灑水。但是透過液體潤 洗進行預濕仍不能完全潤濕非常細小的結構，而且用來潤 洗的液體可能會在局部或很大範圍内將電解液稀釋，從而 帶來新的問題。所α上述方法仍不能_在不引入明顯的工藝 變化或製造成本增加的情況下徹底解決不完全潤濕的問 本發明是在上述背景下揭示的 【發明内容】 、基於上it問題，本發㈣目的是提供一種創新結構的 電沈積系統，它佔地面積小’可以以更高的效率處理更大 規模的晶圓，從而使生産能力得到提高。 〇 爲達成上述目的，本發明的電沈積系統具有三維堆疊 結構，包含用於接收晶圓的工廠介面，備有主框架傳送機 械手的主框架，多個置於主框架上方的晶圓固持裝置，多 個置於主框架上部的三維堆疊結構第一層的電鑛單元，多 個置於主框架下部的三維堆曼結構第二層的清洗和邊緣 去除早π，多冑置於主框架和工廠介面相連部/分的第一 層，或者第二層，或者兩層皆有的熱處理腔，多個置於主 *框架中的氣相預濕模組，爲電鍵單元提供電鑛液和爲清洗 .單元提供處理液的流體分配系統，爲熱處理腔提供氣體混 7 200941587 合物的氣體傳輸系統。主框架傳送機械手在工廠介面，晶 圓固持裝置，清洗單元和熱處理腔之間傳送晶圓。 與前面相關技術中提到的系統相比，本發明系統的一 個優點是，它的二維堆眷社 此…。-有更小的佔地面積，被-二 早7°如電鍍單元佔據的面積可以節省下來，以更高 =效率處理更大規模的晶圓，從而提高生産能力。本發明 、統的另一優點是，當擴展新的工藝單元時，新增加的工200941587 IX. Description of the Invention: [Technical Field] The present invention relates to a system for depositing a metal layer on a semiconductor workpiece, and more particularly to electrodepositing or chemically depositing a metal film from an electrolyte to a semiconductor wafer The chemical deposition method partially etches the film, cleans the surface of the deposited film, and heat-treats the deposited film. Φ [Prior Art] Inter-wafer interconnections are achieved by multiple layers of metal lines embedded in one or more insulating materials located above the logic device or memory device transistor circuit. As the line density in ultra-large integrated circuits increases, the feature sizes of metal interconnect patterns, such as vias and trenches, have been reduced to sub-micron levels, and the degree of metallization has increased. Moreover, as the length of the interconnect leads in the integrated circuit increases, the RC delay has become the most important factor affecting the transmission speed of the circuit. Copper is considered to be an ideal material for metal interconnect leads due to its lower resistivity and higher resistance to electrical rafting. But at the same time, it also faces many device manufacturing challenges. The biggest challenge in achieving copper interconnect technology is through the Damascus process, or through the double Damascene process, which is usually cost-effective to process, through holes and trenches on the entire semiconductor substrate, that is, on the entire wafer. The structure achieves a non-porous, seamless uniform fill. A typical electrodeposition system typically consists of a plurality of electrical chain units for metal electrodeposition or chemical deposition and a cleaning unit for post-plating cleaning and edge removal. An example of such a keying system is disclosed in U.S. Patent No. 6,258,220 and U.S. Pat. The system comprises a main frame provided with a transfer robot, a Mm connected to the main (4) and a telecommunication unit connected to the truss, a plurality of rotary-flushing-drying and edge removing cavities connected to the main frame, and a sum Load the enthalpy of the rapid thermal processing subsystem. The electrode unit, spin-flush-drying and edge removal chambers and other possible additional units of the electrodeposition system used in the production of 曰Ic are all on the same plane. This design occupies a large space in the ultra-clean space. The requirements of this process system for production capacity. Because this system uses a two-dimensional structure, it puts all the process units on a plane - when the need to add some new process units, the system footprint increases, thus limiting its Actual scalability. In addition, in the above electrodeposition system, a plurality of permanent heavy-duty support columns standing on the substrate of the process chamber are required for supporting a plurality of plating units on the plating unit, and the device receives the wafer from the robot and feeds it into the wafer. Electrolyte. These struts are bulky because they require sufficient stability and robustness for the upper unit they support to precisely control their movement. These tower columns not only (4) the space of the frame (4), but i limits the main 35 conveyor robots, the crystal® holding device and the electric material (4), and it is inconvenient for system maintenance. In addition, as the size of the vias and trenches in the wafer pattern is reduced, when the wafer held by the wafer holding device is immersed in the electrolyte, the structure on the wafer is difficult to be completely wetted, resulting in deposition of metal. Defects and voids are created in the membrane structure. A typical method of wetting a wafer is as described in the patents US 2004/0069644 6 200941587 and US 2007/7223323, which are pre-flushed in an additional spin-flush-drying unit prior to electroplating. Another method of wetting the wafer As described in US 2006/7146994, an additional nozzle is used to spray water onto the wafer surface before the wafer is fed into the plating solution. However, pre-wetting by liquid rinsing does not completely wet very fine structures, and the liquid used for rinsing may dilute the electrolyte locally or over a large range, causing new problems. The above method is still unable to completely solve the problem of incomplete wetting without introducing significant process variation or increased manufacturing cost. The present invention is disclosed in the above background, based on the above problem, the present invention (d) The objective is to provide an innovative structure of the electrodeposition system, which has a small footprint, which can process larger wafers with higher efficiency, thereby increasing productivity. In order to achieve the above object, the electrodeposition system of the present invention has a three-dimensional stacked structure including a factory interface for receiving wafers, a main frame provided with a main frame transfer robot, and a plurality of wafer holding devices placed above the main frame. a plurality of electro-metal units arranged in the first layer of the three-dimensional stacked structure placed on the upper part of the main frame, and a plurality of cleaning and edge removal of the second layer of the three-dimensional stack structure placed in the lower part of the main frame are earlier π, and are placed in the main frame and The first layer of the factory interface connection/minor, or the second layer, or both layers of the heat treatment chamber, a plurality of gas phase pre-wet modules placed in the main * frame, providing electro-mineral liquid for the key unit and The cleaning unit provides a fluid distribution system for the treatment fluid to provide a gas delivery system for the heat treatment chamber. The main frame transfer robot transfers the wafer between the factory interface, the wafer holding device, the cleaning unit and the thermal processing chamber. One advantage of the system of the present invention over the systems mentioned in the related art is that it is a two-dimensional stack. - With a smaller footprint, the area occupied by the 2° early 7° plating unit can be saved, and the larger wafers can be processed with higher efficiency to increase productivity. Another advantage of the present invention is that when a new process unit is expanded, a new addition is made.
藝早几在以前技術中只能置於唯一的一層，而在本發明中 可以置於多層’因此不需要過多增加佔地面積。本發明系 統的又-優點是’晶圓固持裝置置於主框架上方，排除了 嚴重限制卫具接近的大體積支樓柱的❹，而且還可以在 進行用戶干涉操作時移到主框架的角落，從而方便了保養 和維護的進行。 本發明的電沈積系統的另一特性是，熱處理腔包含用 於兩面加熱晶圓的加熱盤和熱流分配部件，用於兩面冷卻 晶圓的冷卻盤和冷流分配部件，至少兩個接收並從加熱盤 向冷卻盤傳送晶gj的晶圓gj持裝置，至少兩個用於控制晶 圓固持裝置運動的觸本發明的系統可以提供 均句的鑛後減理卫藝，從而提高雙面熱處理的晶圓上沈 積膜的電學性能和物理性能，並且該熱處理腔可以同時對 多個晶圓進行熱處理，從而使該系統的熱處理腔數量得到 減少，生產能力得到提高。待加工的晶圓在處理前透過主 框架機械手傳送到熱處理腔中的加熱盤，處理後透過前介 面機械手從熱處理腔中的冷卻盤傳送出去，而不需要主框 8 200941587 架/工廠介面放置區， • 了系統的傳送效率。機械手的放置點減少了，提高 • 、本發明的電沈㈣統的又—特性是，它還包含一個氣 子該裝置連接到—個蒸汽產生和傳輸系統，以 =晶圓:表相中吸附到將要在電鐘單元令進行處 糾戈液化二面上未鍍的晶圓前表面上的薄預濕層的吸 與電解液接觸，，本發明的系統 β 小結構的晶圓表面沈積銅膜而不至 因爲70王/間濕而產生空洞的可靠性工藝。 本發明的新特點前面已述，本發明的結構和内容，以 及其他目的和特點’可以透過以下詳細描述和與附圖關聯 的不例進一步理解和認識。 【實施方式】 如圖1和圖2所示，本發明的 +赞明的電沈積系統包含工廒 面和主框架Π。工廠介面包含i φ 匕3置於1級環境中的多個 晶圓裝載琿1〇1、前介面機械手1〇2、晶圓定位器191 主框架包含主框架傳送機械手106、多個電錄單元⑴ 多個清洗單元108、多個熱處理腔104和至少—個氣相 濕模組110。電鍍單元107和清泱罝 、 π β洗单疋108分別置於主框 架11的第一層和第二層，電鍍簞开 黾锻单7L 1〇7疊放於清洗單元 108上方。熱處理腔1〇4置於主框架中 % 11肀並與工廠介面 .10相連。此外，該系統包含傳輸盒103和臨時儲存各U2, • 它們與工廠介面1〇相連並位於熱處理腔104上方·00。傳輸 9 200941587 ==將晶圓從工廠介面i。傳送到主框。卜臨時 圓一用於存放工藝腔出現問題時受到影響的晶 旦4現這種情況，主框架傳送機械手1Q6會將 個電鍍卫藝巾進行了部分處理 以住4 ^ 四取八^時儲存盒112 配Π 一用步的處理。系統還包含與工藝單元相連的流體分 ^用於爲電鍵單讀供魏液和爲清洗單元提供化 学液。系統還包含與熱處理腔相連 m ^ & ^ ^ i镀此合傳輸系統， ;舄“，、處理腔提供混合的工藝氣體。 工廠介面1Q包含多個用於錢和放置晶圓盒192的 m，前介面機械手1G2和至少—個晶圓定位器 在目剛的實施例中，工廠介面ίο包含三個裝載埠 和曰曰圓定位n 19卜在電沈積工藝實施前，需在晶圓 面透過物理氣相沈積、化學氣相沈積或原子層沈積的方 :沈積-薄導電層’這些前處理工藝完成以後，容納多個 ❹ 人的日日圓益1 9 2，更恰當的名稱是工業晶圓前開式晶圓 被傳送並放置在一個裝載埠1〇1上。前介面機械手 1 〇2是一接士 種本領域一般技術人員通常都知道的典型的傳送 手’由一或兩個機械臂組成。 個所有的工藝模組都位於主框架内部。如圖2所示，每 電鍍單元107位於清洗單元1〇8的垂直上方。目前的實 施例申 . ’與裝載埠101的數量相對應，主框架11包含4 個電鐘屬 電鑛系/ 1〇7和4個清洗單元1〇8。應該瞭解的是’該 、、、死的主框架11中的電鍍單元107的數量不僅限於 目前的督+ ,, h X施例。本領域一般技術人員可以根據所需的生產 200941587 能力增加或減少單元數量。應該注意的是，電鍍單元】π 和清洗單元108的堆疊結構爲主框架丨丨節省了空間，減 ’少了該電沈積系統的佔地面積。在下面的規格中還應該注 意到，該系統電鍍單元107堆疊在清洗單元1〇8上方的三 維結構可以在增加新的工藝單元時不過度增加佔地面積。 主框架11還包含多個晶圓固持裝置1〇5，每個固持 裝置置於電鍍單元107上方，裝在主框架u上。在本發 _ 明的電沈積系統的實施例中，與電锻單元丨〇 7的數量相對 應’主框架11包含4個晶圓固持裝置1 〇 5。 如圖4所示，晶圓固持裝置1〇5包含晶圓夾裝置，該 晶圓夾裝置又包含晶圓夾511 ’陰極接觸（未示出）和制 動器。該制動器可能包含步進電動機52丨，523和伺服電 動機525。該陰極接觸可能包含多個軟不錢鋼彈普圈以維 持均勻的截面形狀’以改善與晶圓的電連接並減少由於機 械接觸的壓縮應力而導致對下面膜的傷害^晶圓夾可能包 ，含底部和頂部’晶圓被夾持在底部和頂部之間，因此晶圓 夾裝置設置成可以開、關和旋轉晶圓夾，來插入、移除和 旋轉晶圓，並且陰極接觸置於晶圓夾底部和頂部之間，在 電鍍工藝開始前晶圓夾被制動器關閉時可以達成與晶圓 則面的電連接。接觸位置的電資訊被監控並反饋到控制系 統。此外’晶圓固持裝置1 〇 5可以移到主框架11的角落 以方便性能維護。晶圓可以由晶圓夾511夾持並沿ζ轴移 動和沿X轴和Ζ袖旋轉’晶圓夾511由制動器的步進電動 機521 ’ 523和伺服電動機525驅動。關於晶圓夾組成包 11 200941587 含晶圓夾和陰極接觸的詳細描述’可參考專利Us〇64950〇7 名稱爲 “Methods and apparatus for holding and positioning semiconductor wafer during e1ectropo1i shi ng and/or electroplating 〇f the workpieces” ，透過引用結合於此，本發明中，整個晶圓 固持裝置由連接晶圓固持裝置1〇5和主框架頂部的裝配 臂527支撐。應該注意至,j ’置於主框架頂部的曰曰曰圓固持裝 ❹ ❹ 置105的結構加強了主框架傳送機械手1〇6到達晶圓固持 裝置和電鑛單7L的可到達性，而且由於不需要支撐柱而節 省了空間。 a曰 主框架11還包含氣相預濕裝置，它可能被集成在 圓固持裝Ϊ 105上或者作爲獨立模組存在（如圖所示） 預濕裝置與蒸汽發生系統相連，爲晶圓前表面提供液態蒸 汽並形成一層超薄的預濕層，從而改善了電鍍工藝中=潤 濕性能》利用液態蒸汽可以完全潤濕一些通孔和溝槽等極 小結構’並且不會對電錄液造成明顯稀釋。因此本發明的 系統可以滿足超大型積體電路中，排 辨險甶於線密度增加帶 來的不完全潤濕造成的相關缺陷的要求。 如圖3所示，在本實施例中，電鍍單元ΠΠ包含-個 電解液腔700。電解液腔7QQ包含多個環形電極711 個環形隔離牆713，環形隔離瞌71 Q你& 心離牆713將整個電解液腔700 隔離成多個獨立區域，每個區域中 崎〒有一個早獨的環形電極 711。電極711由多個電源（未 、个不應用不同的波形， 不同的開關次序’或者在雷链 溢 電錢工藝中不W冑間分別控 12 200941587 制》 關於所述電解液腔的詳細描述，可參考專利 US06495007,名稱爲 “Methods and apparatus for holding and positioning semiconductor wafer during electropolishing and/or electroplating of the workpieces” ，透過引用結合於此。Art has only been placed in a single layer in the prior art, and can be placed in multiple layers in the present invention so that it does not require an excessive increase in floor space. A further advantage of the system of the present invention is that the 'wafer holding device is placed above the main frame, eliminating the shackles of the large-volume pylons that severely limit the access of the visor, and can also be moved to the corner of the main frame during user intervention operations. This facilitates maintenance and maintenance. Another feature of the electrodeposition system of the present invention is that the thermal processing chamber includes a heating plate and a heat flow distribution member for heating the wafer on both sides, and a cooling plate and a cold flow distribution member for cooling the wafer on both sides, at least two receiving and receiving The heating plate transfers the wafer gj holding device to the cooling plate, and at least two systems for controlling the movement of the wafer holding device can provide the post-mining reduction technology of the uniform sentence, thereby improving the double-sided heat treatment. The electrical and physical properties of the deposited film on the wafer, and the heat treatment chamber can simultaneously heat treat a plurality of wafers, thereby reducing the number of heat treatment chambers of the system and improving the production capacity. The wafer to be processed is transferred to the heating plate in the heat treatment chamber through the main frame robot before processing, and then transferred from the cooling plate in the heat treatment chamber through the front interface robot, without the main frame 8 200941587/factory interface Placement area, • System transfer efficiency. The placement point of the robot is reduced, and the characteristic of the electrospray (four) system of the present invention is that it also contains a gas which is connected to a steam generation and transmission system to = wafer: surface Adsorption to the electrolyte contacting the thin pre-wet layer on the front surface of the uncoated wafer on the two sides of the liquefied liquefaction on the side of the electric clock unit, the copper surface of the system of the present invention is deposited on the surface of the wafer. The film is not a reliable process for creating voids due to the 70 king/wet. The novel features and advantages of the invention are set forth in the <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; [Embodiment] As shown in Figs. 1 and 2, the +adjusted electrodeposition system of the present invention comprises a work surface and a main frame. The factory interface includes i φ 匕3, a plurality of wafer loadings in a level 1 environment, a front interface robot 1 〇 2, a wafer locator 191 main frame including a main frame transfer robot 106, a plurality of electricity Recording unit (1) A plurality of cleaning units 108, a plurality of thermal processing chambers 104, and at least one vapor phase wet module 110. The plating unit 107 and the cleaning and πβ washing unit 108 are respectively placed in the first layer and the second layer of the main frame 11, and the plated open forging sheets 7L 1 to 7 are stacked above the cleaning unit 108. The heat treatment chamber 1〇4 is placed in the main frame and connected to the factory interface .10. In addition, the system includes a transfer cassette 103 and temporary storage of each U2, • they are connected to the factory interface 1〇 and are located above the thermal processing chamber 104. Transmission 9 200941587 == Transfer the wafer from the factory interface i. Transfer to the main box. Temporary round one is used to store the crystal chamber 4 which is affected when there is a problem in the process chamber. In this case, the main frame transfer robot 1Q6 will partially process the electroplating sanitary napkin to store 4^4. The box 112 is equipped with a step-by-step process. The system also contains fluids that are connected to the process unit. They are used to read the fluid for the single-use of the switch and to supply the chemical to the cleaning unit. The system further includes a m ^ & ^ ^ i plating transfer system, 舄 ", the processing chamber provides a mixed process gas. The factory interface 1Q includes a plurality of m for money and placement of the wafer cassette 192. , front interface robot 1G2 and at least one wafer locator In the embodiment, the factory interface ίο contains three loading 埠 and 曰曰 circular positioning n 19 bu before the electrodeposition process is implemented, on the wafer surface After physical pre-treatment, such as physical vapor deposition, chemical vapor deposition or atomic layer deposition, the deposition process is completed. The round front wafer is transferred and placed on a load 埠1〇1. The front interface robot 1 〇2 is a typical type of transfer hand commonly known to those skilled in the art from one or two machines. The arm consists of all the process modules located inside the main frame. As shown in Figure 2, each plating unit 107 is located vertically above the cleaning unit 1〇8. The current embodiment applies “the number corresponding to the loading cassette 101”. , the main frame 11 contains The four electric clocks belong to the electric mine system / 1〇7 and 4 cleaning units 1〇8. It should be understood that the number of electroplating units 107 in the main frame 11 of the dead, is not limited to the current supervisor +, h X. A person of ordinary skill in the art can increase or decrease the number of units according to the required production capacity of 200941587. It should be noted that the stacking structure of the plating unit π and the cleaning unit 108 saves space for the main frame, minus 'The footprint of the electrodeposition system is reduced. It should also be noted in the following specifications that the three-dimensional structure of the system plating unit 107 stacked above the cleaning unit 1〇8 can be excessively increased when adding a new process unit. The main frame 11 further includes a plurality of wafer holding devices 1〇5, each of which is placed above the plating unit 107 and mounted on the main frame u. In the embodiment of the electrodeposition system of the present invention, Corresponding to the number of electric forging units 7 'the main frame 11 includes 4 wafer holding devices 1 〇 5. As shown in FIG. 4, the wafer holding device 1 〇 5 includes a wafer holder device, the wafer holder device Also includes wafer clip 511 'yin A pole contact (not shown) and a brake. The brake may include stepper motors 52A, 523 and a servo motor 525. The cathode contact may contain a plurality of soft steel ball rings to maintain a uniform cross-sectional shape to improve The electrical connection of the wafer reduces the damage to the underlying film due to the compressive stress of the mechanical contact. The wafer holder may contain the bottom and the top. The wafer is held between the bottom and the top, so the wafer holder device is set. The wafer holder can be opened, closed, and rotated to insert, remove, and rotate the wafer, and the cathode contact is placed between the bottom and the top of the wafer holder, which can be achieved when the wafer holder is closed by the brake before the plating process begins. The electrical connection of the wafer is then the electrical information of the contact location is monitored and fed back to the control system. In addition, the wafer holding device 1 〇 5 can be moved to the corner of the main frame 11 to facilitate performance maintenance. The wafer can be held by the wafer holder 511 and moved along the x-axis and rotated along the X-axis and the crotch sleeve. The wafer holder 511 is driven by the stepper motor 521 ' 523 of the brake and the servo motor 525. About Wafer Clamp Package 11 200941587 A detailed description of wafer holder and cathode contact is available. 'Methods and apparatus for holding and positioning semiconductor wafer during e1ectropo1i shi ng and/or electroplating 〇f the The workpieces are incorporated herein by reference. In the present invention, the entire wafer holding device is supported by a mounting arm 527 that connects the wafer holding device 1〇5 and the top of the main frame. It should be noted that the structure of the dome-retaining device 105 disposed at the top of the main frame enhances the accessibility of the main frame transfer robot 1〇6 to the wafer holding device and the electric billet 7L, and Space is saved because no support columns are needed. The main frame 11 also includes a gas phase pre-wet device which may be integrated on the circular holding frame 105 or exist as a separate module (as shown). The pre-wetting device is connected to the steam generating system as the front surface of the wafer. Provides liquid steam and forms an ultra-thin pre-wet layer to improve the wetting performance in the electroplating process. Using liquid steam, it can completely wet some very small structures such as vias and trenches' and does not cause obvious dilution. Therefore, the system of the present invention can satisfy the requirements of the related defects caused by the incomplete wetting caused by the increase in the linear density in the ultra-large integrated circuit. As shown in Fig. 3, in the present embodiment, the plating unit ΠΠ includes an electrolyte chamber 700. The electrolyte chamber 7QQ comprises a plurality of annular electrodes 711 annular partition walls 713, and the annular isolation 瞌 71 Q & 心 the core away from the wall 713 isolates the entire electrolyte chamber 700 into a plurality of independent regions, each of which has a long history Ring electrode 711. The electrode 711 is composed of a plurality of power sources (not, no different waveforms are applied, different switching orders are used, or are not controlled separately in the smash-and-sink process). A detailed description of the electrolyte chamber is described. Reference is made to US Pat. No. 6,460, 007, entitled "Methods and apparatus for holding and positioning semiconductor wafer during electropolishing and/or electroplating of the workpieces", which is incorporated herein by reference.
❹ 但是，本發明的電沈積系統的電解液腔7 0 0與前面相 關技術中所述的電解液腔有一些不同。本發明的電沈積系 統的電解液腔700被氣泡聚結裝置720隔離成一個接收下 部補給電解液的下部腔體701和接收上部補給電解液的 上部腔體702。 電解液腔700的下部腔體7〇1的每個獨立區域各有入 口和出口與其相連。電解液透過泵從電解液槽（將在後面 段落詳細描述）壓入電解液腔700的每個獨立區域，電解 液從入口流入，從出口流出，最後返回所述電解液槽從而 達成電解液腔700的下部腔體70丨的每個獨立區域中獨立 的電解液循環。 上部腔體702的每個獨立區域有一個由LMFc (液體 流量控制器）分別控制的電解液入口，所以上部腔體他 的每個獨立區域中流向晶圓表面的電解液流速可以獨立 控制。液體流量控制器都是耐酸耐蝕的。下部腔體 上部腔體702都是由電絕緣的耐酸耐蝕材料，如pvc PVDF製成或者包覆的。 良 氣泡聚結裝置720包含具有多個v形凹槽的錐形框架 13 200941587 和緊附在錐形框架上的多孔膜。氣泡聚結裝置720上方有 g子與電鍍早元107外面相連。電鍍過程中電極711上生 成的氣泡首先在v形凹槽中聚結並向上移動，然後透過所 述管子移出腔體。 清洗單元108包含腔體’該腔體有用於將晶圓傳入或 傳出清洗單元108的窗口和置於腔體中間的晶圓固持部 件，該固持部件可以在置於清洗單元1 08底部的制動器的 φ 作用下以1 〇到4 〇 〇 〇 rpm的速度旋轉。該晶圓固持部分包 含3個將晶圓固定在清洗單元1〇8中的支撐腳（pa)，每 個支撐腳上有一個可以透過旋轉啟動的機械夹子，每個支 撐腳頂部有小角度的台階。當晶圓固持部件旋轉，機械夹 子關閉並將晶圓緊固，防止晶圓和支撐腳之間相對運動； 當晶圓固持部分停止旋轉，機械夾子打開，晶圓可以被主 框架傳送機械手拿起。 清洗單元108具有前喷嘴、後喷嘴、可移動喷嘴。前 〇 噴嘴置於m洗單元108腔體上部並從中延伸出來，爲晶圓 别表面提供去離子水。後喷嘴置於清洗單元108腔體下部 並從中k伸出來’爲晶圓後表面提供去離子水。可移動喷 嘴置於清洗單元1 0 8腔體中部並可以徑向移動到晶圓邊 緣在工作時爲晶圓邊緣提供混合的酸和過氧化物，在晶 圓傳送時從清洗腔體中間移開。可移動喷嘴的運動由制動 器控制。'青洗單元108還包含置於腔體頂部用於阻止流體 濺出凊洗單疋並污染本系統部件的蓋子。關於所述清洗單 - 疋108的詳細描述’可參考專利WO 03/087436,名稱爲 14 200941587 “Electropolishing and/or electroplating apparatus • and methods” ，透過引用結合於此。 * 主框架11還包含流體分配系統，該系統包含置於主 框架11底部的電解液槽109,該槽爲每個電鍍單元1〇7 提供電解液。如圖6所示，電解液槽109被隔離成下部電 解液槽191b和上部電解液槽192b。下部電解液槽191b 連接到電鍍單元107下部腔體，爲電鍍單元1〇7提供下部 單元補給電解液，上部電解液槽192b連接到電鍍單元ι〇7 上部腔體，爲電鍍單元107提供上部單元補給電解液。下 部電解液槽191b和上部電解液槽192b分別透過電解液供 應線路311和321b連接到電鍵單元1〇7，電解液供應線 路上有泵313、兩通閥315、止回閥316、控制閥312。更 適宜的是，連接電解液槽109和電鍍單元1〇7的電解液線 路中，接入過濾器31 7來過濾雜質和可模擬輸出的流量計 314來監測流速。電解液槽1〇9有溫度感測器和冷卻器來 φ 維持下部電解液槽和上部電解液槽中的電解液溫度在固 定水準。下部電解液槽和上部電解液槽透過兩個附加的管 子321分別連接到量測工具351上’爲監測下部電解液槽 和上部電解液中電解液成分濃度的量測工具351提供電 解液試樣。 流體分配系統還包含化學槽3 3 〇，酸和過氧化物在其 中均勻混合，然後被提供給清洗單元丨〇8中的可移動噴 . 嘴。化學槽330透過管子352連接到量測工具351，爲監 - 測混合化學品成分濃度的量測工具351提供酸和過氧化 15 200941587 .物混合的化學品試樣。化學槽330中的混合化學品透過栗 3 53和串列的閥（可能包含兩通手動閥挪、控制閥奶卜 •㊉通氣動閥359 )傳輸到清洗單元⑽中的可移㈣嘴， 用於去除電錄後的晶圓邊緣上的沈積金屬。更適宜的是， 連接化學槽330和清洗輩开1no 卓凡108的管路中’接入過濾器 來過瀘、雜質和模擬輸出的流量計354來監測流速。 本發月的系統還包含定量給料系統。定量給料系 _ 統3 6 1連到電控模组f聪y· 了· ® i _ . 、，（將在下文詳細描述）’將根據操作 A的運异和量測工具351的分析結果爲電解液槽109的 下：槽和上部槽供給所需量的金屬離子或有機添加劑，以 :丘電鍍液穩疋的電沈積性能和混合化學品的邊緣去 性能。 -圖所不’本實施例中包含兩個熱處理腔1〇4，兩 :平仃佈置於主框架"中，並與工廠介面相連。更適 宜的是’熱處理腔1〇4包含具有兩個窗口的矩形腔體，一 ❹=主框架11的窗口爲加熱單元窗口 421，另一面向工 廢；丨面1Q的窗口爲冷卻單元窗σ 423。熱處理腔！04還 於鄰近加熱單元窗口 421的腔體中的加熱盤 411位於鄰近冷卻單元窗口 423的腔體中的冷卻盤41 3，❹ However, the electrolyte chamber 700 of the electrodeposition system of the present invention is somewhat different from the electrolyte chamber described in the related art. The electrolyte chamber 700 of the electrodeposition system of the present invention is separated by a bubble coalescing device 720 into a lower chamber 701 that receives the lower replenishing electrolyte and an upper chamber 702 that receives the upper replenishing electrolyte. Each of the separate regions of the lower chamber 7〇1 of the electrolyte chamber 700 has its own inlet and outlet connected thereto. The electrolyte is pumped through the pump from each of the electrolyte chambers (described in detail in the following paragraphs) into each individual region of the electrolyte chamber 700. The electrolyte flows from the inlet, exits the outlet, and finally returns to the electrolyte chamber to achieve the electrolyte chamber. A separate electrolyte circulates in each separate region of the lower chamber 70 of the 700. Each of the separate regions of the upper chamber 702 has an electrolyte inlet controlled by a LMFc (Liquid Flow Controller), so that the flow rate of electrolyte flowing to the wafer surface in each of its separate regions can be independently controlled. The liquid flow controllers are acid and corrosion resistant. Lower Cavity The upper cavity 702 is made of or coated with an electrically insulating, acid and corrosion resistant material such as pvc PVDF. The good bubble coalescence device 720 comprises a tapered frame 13 200941587 having a plurality of v-shaped grooves and a porous film attached to the tapered frame. Above the bubble coalescence device 720, g is connected to the outside of the electroplating element 107. The bubbles generated on the electrode 711 during the electroplating process first coalesce in the v-shaped groove and move upward, and then move out of the cavity through the tube. The cleaning unit 108 includes a cavity having a window for transferring the wafer into or out of the cleaning unit 108 and a wafer holding member disposed in the middle of the cavity, the holding member being disposed at the bottom of the cleaning unit 108 The brake rotates at a speed of 1 〇 to 4 〇〇〇 φ. The wafer holding portion comprises three support legs (pa) for fixing the wafers in the cleaning unit 1〇8, and each support leg has a mechanical clip that can be rotated and activated, and each support leg has a small angle at the top. Steps. When the wafer holding member rotates, the mechanical clip is closed and the wafer is fastened to prevent relative movement between the wafer and the support leg; when the wafer holding portion stops rotating, the mechanical clip is opened, and the wafer can be taken by the main frame transfer robot Start. The cleaning unit 108 has a front nozzle, a rear nozzle, and a movable nozzle. The front 喷嘴 nozzle is placed in the upper portion of the cavity of the m-wash unit 108 and extends therefrom to provide deionized water to the surface of the wafer. The rear nozzle is placed in the lower portion of the chamber of the cleaning unit 108 and extends from the center to provide deionized water to the rear surface of the wafer. The movable nozzle is placed in the middle of the cavity of the cleaning unit and can be moved radially to the edge of the wafer to provide mixed acid and peroxide for the edge of the wafer during operation, and removed from the middle of the cleaning chamber during wafer transfer . The movement of the movable nozzle is controlled by the brake. The bluewash unit 108 also includes a lid placed on the top of the chamber for preventing fluid from spilling out of the wash basket and contaminating the components of the system. A detailed description of the cleaning sheet - 疋 108 can be referred to the patent WO 03/087436 entitled "Electropolishing and/or electroplating apparatus and and methods", which is incorporated herein by reference. * The main frame 11 also includes a fluid dispensing system that includes an electrolyte bath 109 disposed at the bottom of the main frame 11 that provides electrolyte for each plating unit 101. As shown in Fig. 6, the electrolytic solution tank 109 is isolated into a lower electrolytic solution tank 191b and an upper electrolytic solution tank 192b. The lower electrolyte tank 191b is connected to the lower chamber of the plating unit 107, and the lower unit supply electrolyte is provided for the plating unit 1〇7, and the upper electrolyte tank 192b is connected to the upper chamber of the plating unit ι7, and the upper unit is provided for the plating unit 107. Replenish the electrolyte. The lower electrolyte tank 191b and the upper electrolyte tank 192b are connected to the key unit 1〇7 through the electrolyte supply lines 311 and 321b, respectively. The electrolyte supply line has a pump 313, a two-way valve 315, a check valve 316, and a control valve 312. . More preferably, in the electrolyte line connecting the electrolyte tank 109 and the plating unit 1〇7, the filter 31 7 is connected to filter the impurities and the flow meter 314 which can simulate the output to monitor the flow rate. The electrolyte tank 1〇9 has a temperature sensor and a cooler to φ maintain the electrolyte temperature in the lower electrolyte tank and the upper electrolyte tank at a fixed level. The lower electrolyte tank and the upper electrolyte tank are respectively connected to the measuring tool 351 through two additional tubes 321 'providing an electrolyte sample for the measuring tool 351 for monitoring the concentration of the electrolyte component in the lower electrolyte tank and the upper electrolyte . The fluid dispensing system also includes a chemical tank 3 3 in which the acid and peroxide are uniformly mixed and then supplied to the movable spray nozzle in the cleaning unit 丨〇8. The chemical tank 330 is connected to the measuring tool 351 through a pipe 352 to provide a chemical sample for the acid and peroxidation of the measuring tool 351 for monitoring the concentration of the mixed chemical component. The mixed chemical in the chemical tank 330 is transferred to the movable (four) nozzle in the cleaning unit (10) through the pump 3 53 and the serial valve (possibly including the two-way manual valve, the control valve, the ten-way pneumatic valve 359). The deposited metal on the edge of the wafer after the recording is removed. More preferably, the flow rate is monitored by a flow meter 354 that connects the chemical tank 330 and the purged open 1no Zhuo 108 to the filter to pass through the helium, impurities, and analog output. The system of this month also includes a dosing system. The dosing system _ system 3 6 1 is connected to the electronic control module f y y · · · i _ . , , (described in detail below) 'The analysis result of the operation and measurement tool 351 according to operation A is The lower: tank and upper tank of the electrolyte tank 109 supply a desired amount of metal ions or organic additives to: the stable electrodeposition performance of the mound plating solution and the edge de-performance of the mixed chemicals. - The figure does not include the two heat treatment chambers 1〇4, two: the flat jaws are arranged in the main frame " and are connected to the factory interface. More preferably, the 'heat treatment chamber 1 〇 4 comprises a rectangular cavity having two windows, one ❹ = the window of the main frame 11 is the heating unit window 421, and the other is facing the work waste; the window of the 丨 1Q is the cooling unit window σ 423. Heat treatment chamber! 04 is also located in the cavity adjacent to the heating unit window 421. The heating plate 411 is located adjacent to the cooling plate 41 3 in the cavity of the cooling unit window 423.
兩個分別位於加熱盤411和冷卻盤413對面的晶園固持裝 置 431，4H 、 曰曰圓固持裝置431，433用於接收主框架傳 送機械手1〇6傳送過來的晶圓，將其裝載到加熱盤411或 ' 冷卻盤41 2卜 , ’由加熱盤411傳送至冷卻盤413，並傳送 至别介面機械手⑽。晶圓固持裝置431或433包含-支 16 200941587Two crystal garden holding devices 431, 4H and 曰曰 round holding devices 431, 433 respectively located opposite the heating plate 411 and the cooling plate 413 are used to receive the wafer transferred from the main frame transfer robot 1 〇 6 and load it into the wafer The heating plate 411 or 'cooling plate 41 2b' is transferred from the heating plate 411 to the cooling plate 413 and transferred to the other interface robot (10). Wafer holding device 431 or 433 includes - branch 16 200941587
❾ 撐臂439，支撐臂連接一驅動器438’驅動器由兩個步進 電動機（或伺服電動機）組成。該固持裝置還配置有一包 含數個支撐爪的支撐環437。熱處理腔丨04的晶圓固持裝 置431在驅動器438的控制下可旋轉或垂直移動。熱處理 腔104還包含一個蓋子441，蓋子441上配有兩個流體分 配部件448，449，一流體管道與流艎分配部件448和44g 相連。流體分配部件448，449位於加熱盤411和冷卻盤 41 3上方，爲熱處理腔提供所需流體，例如I和I的混 合物。位於加熱盤411上方的流體分配部件448提供熱流 體到晶圓前表面，與加熱盤對晶圓背面的加熱一起，達成 對晶圓的雙面加熱。位於冷卻盤413上方的流體分配部件 449提供冷流體到晶圓前表面，與冷卻盤對晶圓背面的冷 卻-起，達成對晶圓的雙面冷卻。這種雙面的熱處理機制 提供了一個均勻的熱處理工藝’減小了熱應力所導致的晶 圓的考曲變形，且其能同時對多片晶圓進行熱處理，極大 提高了熱處理腔的效率和產量。 在主框架11的背面還包含一雪 ° y 冤徑模組。電控模組的 系統框圖如圖7所示。電控模組一般包含—主機，其用戶 介面將電控模組、機械手控制系统、' 本挑更動機驅動系統、I / 〇 介面板和電鍍系統電源控制板诖蛀 和奴建接在一起》主機是電控模 組的關鍵控制設備，它提供了箝 択T所有的I/O埠，RS232埠和 運動控制板。主機透過I/O介面柘 面板向所有需要透過控制信 號進行流量控制的工藝單元傳铪幹 干唬，例如電鍍單元中的 電解液流量控制和清洗單元噴嘴 只％于去離子水和酸的流量 17 200941587 控制。與ι/ο介面板和電鍍單元1〇7電氣連接的電鍍系統 ’· 電源控制板，爲電鍍單元的高能耗提供可調的^電壓 /電流。主機透過機械手控制系統傳輸控制參數信號，來 控制主框架傳送機械手和前介面機械手。然而，機械手控 制系統也可能是一台透過RS232埠與主機相通的獨立電 胸因此即使沒有主機，機械手控制系統仍然可以控制主 框架傳送機械手和前介面機械手。電動機驅動系統分別將 ❺纟機和電鑛單％、清洗單元和熱處理腔的祠服/步進電動 機電氣相連，傳輸從主機運動控制板到熱處理腔、清洗單 疋和電鍍單元的伺服/步進電動機的控制信號，和伺服/ 步進電動機反馈回主機的編碼信號。 應該注意的是，整個電沈積工藝應該在一個潔淨的環 境中進行，因此更爲適宜的是本發明的系統被面板封閉起 來。面板上配有透明的窗口，從而使電沈積工藝能在操作 者的監控下進行。面板是可移動的或者配置有開口以便於 @ 性能維護。 操作過程中，前介面機械手i〇2將一片晶圓從晶圓 盒192傳送到晶圓定位器191。定位器191接收晶圓後將 其旋轉至一預先設定好的方位，以便接下來的工藝中晶圓 y以被精確控制。晶圓定位完成後，前介面機械手1〇2將 晶圓傳送至晶圓傳輸盒ί 以供進一步傳送到主框架j。 主框架傳送機械手1〇6將一片晶圓從晶圓傳輸盒1〇3 中傳送至晶圓固持裝置1〇5上’或者從主框架的電鑛單元 107中傳送至清洗單元1〇8中，或者從清洗單元中傳 18 200941587 送至熱處理腔1〇4中。機械手1〇6是—種本 •人員通常都知道的由多個機械臂組成傳送一般技術 •施例中，主框架傳送機械手1〇6由兩個可獨立择朴在本實 臂、、且成忙架傳送機械手1〇6可以如圖2所 轉和上下垂直移動。主樞架傳送機械手1〇6的兩 = 可以透過控制而進行伸缩，用 機械# 元傳入或傳出電鑛單 早疋108，還可以翻轉晶圓以滿足不同工藝 ⑩二如中t電鑛單元卜晶圓應該正面朝下放置， 而在清洗早7L中則需要正面朝上放置。 對於工藝過程，首先，晶圓固持裝置m停留在一接 收位置，晶圓固持裝置105的晶圓夹511保持打開狀態。 主框架傳送機械手1Q6從位於主框架⑽和^介面ι〇 之間的傳輸盒103中拿起一片晶圓，翻轉使其正面朝下， i將其傳送至氣相預濕裝置，如圖所示，此氣相預濕裝置 爲獨立模組。氣相預濕裝置將蒸汽喷向晶圓前表面，並於 Ο 其上形成一層預濕液薄膜。然後主框架機械手將晶圓傳送 至μ圓固持裝置1〇5的晶圓夾中，並置於晶圓固持裝置中 的陰極接觸上。當主框架傳送機械手的機械臂收縮並移出 晶圓固持裝置1 0 5以後，晶圓夾關閉並緊固晶圓使其與陰 極彈簧緊密接觸。而且由於晶圓背面被完全密封，所以不 會在電鍍過程中與電解液接觸。伺服電動機525開始旋 轉’使得晶圓固持裝置1 〇5開始旋轉晶圓。步進電動機 5 23轉動晶圓固持裝置j 〇5使之與ζ軸成特定角度，然後 步進電動機521沿著ζ軸方向移動晶圓固持裝置ι〇5至預 19 200941587 定位置’使晶圓夾5 11的邊緣剛好沒過電鍍單元1 ο 7的液 位線。撑 Strut arm 439, the support arm is coupled to a driver 438' The driver is comprised of two stepper motors (or servo motors). The holding device is also provided with a support ring 437 comprising a plurality of support claws. The wafer holding device 431 of the heat treatment chamber 04 is rotatable or vertically movable under the control of the driver 438. The heat treatment chamber 104 also includes a cover 441 having two fluid distribution members 448, 449 disposed thereon, a fluid conduit being coupled to the flow distribution members 448 and 44g. The fluid distribution members 448, 449 are positioned above the heating plate 411 and the cooling plate 41 3 to provide a desired fluid for the heat treatment chamber, such as a mixture of I and I. A fluid dispensing member 448 located above the heating plate 411 provides a heat flow to the front surface of the wafer, along with heating of the wafer back to the wafer, to achieve double-sided heating of the wafer. The fluid dispensing component 449, located above the cooling plate 413, provides cold fluid to the front surface of the wafer and cools the backside of the wafer from the cooling plate to achieve double-sided cooling of the wafer. This double-sided heat treatment mechanism provides a uniform heat treatment process 'reducing the distortion of the wafer caused by thermal stress, and it can heat the multiple wafers at the same time, greatly improving the efficiency of the heat treatment chamber and Yield. A snow y 冤 模组 module is also included on the back of the main frame 11. The system block diagram of the electronic control module is shown in Figure 7. The electronic control module generally includes a host computer, and its user interface connects the electronic control module, the robot control system, the 'this pick and more drive system, the I/〇 interface panel and the electroplating system power control board and the slave construction. The mainframe is the key control device for the electronic control module. It provides all the I/O ports, RS232 ports and motion control boards. The host communicates with all process units that need flow control through the control signal through the I/O interface panel. For example, the electrolyte flow control in the plating unit and the cleaning unit nozzle are only based on the flow of deionized water and acid. 200941587 Control. Electroplating system electrically connected to the ι/ο interface panel and plating unit 〇7 ’· The power control panel provides adjustable voltage/current for the high energy consumption of the plating unit. The host transmits control parameter signals through the robot control system to control the main frame transfer robot and the front interface robot. However, the robotic control system may also be a stand-alone chest that communicates with the host via RS232, so even without a host, the robotic control system can still control the main frame transfer robot and the front interface robot. The motor drive system electrically connects the blower and the electric ore unit, the cleaning unit and the heat treatment chamber of the service/stepping motor, respectively, and transmits the servo/stepping from the main body motion control board to the heat treatment chamber, the cleaning unit and the plating unit. The control signal of the motor and the servo/stepper motor are fed back to the coded signal of the host. It should be noted that the entire electrodeposition process should be carried out in a clean environment, and it is therefore more desirable that the system of the present invention be enclosed by a panel. The panel is fitted with a transparent window so that the electrodeposition process can be carried out under operator supervision. The panel is removable or has an opening for @performance maintenance. During operation, the front interface robot 〇2 transfers a wafer from the wafer cassette 192 to the wafer positioner 191. The positioner 191 receives the wafer and rotates it to a predetermined orientation so that the wafer y is precisely controlled in the next process. After wafer positioning is completed, the front interface robot 1〇2 transfers the wafer to the wafer transfer cassette for further transfer to the main frame j. The main frame transfer robot 1〇6 transfers a wafer from the wafer transfer cassette 1〇3 to the wafer holding device 1〇5 or from the electro-metal unit 107 of the main frame to the cleaning unit 1〇8. Or, from the cleaning unit, pass 18 200941587 and send it to the heat treatment chamber 1〇4. The robot 1〇6 is a general technique that is generally known by personnel and consists of a plurality of mechanical arms. In the example, the main frame transfer robot 1〇6 is independently selected from the actual arm, And the busy rack transport robot 1〇6 can be rotated as shown in Fig. 2 and vertically moved up and down. The two main transmission transmission robots 1〇6 can be telescoped through control, and can be transferred to or from the electric mine with a mechanical #元, and the wafer can be flipped to meet different processes. The mine unit wafer should be placed face down, and in the early 7L cleaning, it needs to be placed face up. For the process, first, the wafer holding device m stays in a receiving position, and the wafer holder 511 of the wafer holding device 105 remains open. The main frame transfer robot 1Q6 picks up a wafer from the transfer box 103 located between the main frame (10) and the interface ι, and flips it to face down, i transfers it to the gas phase pre-wet device, as shown in the figure. The gas phase pre-wet device is a separate module. The vapor phase pre-wet device sprays steam onto the front surface of the wafer and forms a pre-wet film on the crucible. The main frame robot then transfers the wafer to the wafer holder of the μ-circle holding device 1〇5 and places it on the cathode contact in the wafer holding device. After the main arm of the main frame transfer robot contracts and moves out of the wafer holding device 105, the wafer holder closes and secures the wafer in close contact with the cathode spring. Moreover, since the back side of the wafer is completely sealed, it does not come into contact with the electrolyte during the plating process. The servo motor 525 begins to rotate ' so that the wafer holding device 1 〇 5 starts to rotate the wafer. The stepping motor 5 23 rotates the wafer holding device j 〇 5 to make a specific angle with the boring axis, and then the stepping motor 521 moves the wafer holding device ι 5 to the pre- 19 200941 587 position in the ζ axis direction to make the wafer The edge of the clip 5 11 just has not passed the liquid level line of the plating unit 1 ο 7 .
其後電動機523開始轉動晶圓固持裝置1 〇5回到垂直 位置’並且將晶圓固持裝置1〇5攜至電鍍單元1〇7中，從 而使得晶圓前表面與電解液腔7〇〇的上部腔體702中的電 解液接觸。然後開始電鍍過程。透過控制多重陽極的波 形、工作順序和時間以及電解液流速，可以在晶圓上沈積 得到均勻的金屬薄膜。關於電鍍工藝的詳細描述，請參考 專利 US〇6391 166，“Plating apparatus and methods” ， 透過引用結合於此。 在另一實施例中，氣相預濕設備與晶圓固持裝置集成 在y起》在工藝過程中，主框架機械手從傳輸盒中拿起晶 圓並且將其傳送至晶圓固持裝置。在晶圓固持裝置將晶圓 ，至電解液中之前，預濕裝置移人並向晶圓表面喷灌蒸 》飞。預濕過程完成德，a面兩 ,、_ $凡风俊曰曰圓固持裝置將晶圓攜至電解液 ’進行與上述相同的電鐘過程。 圓從： 晶圓固持裝置105往上移動，將晶 單元107的電解液中移出。晶圓固持裝置_ 留的電將攜帶晶圓高速旋轉以移除晶圓表面殘 ^解液。其後晶圓固持裳置1〇5移至接收位置，晶圓 打開。主框架傳送機械手的機械 置105中’將晶圓移出並翻轉使其正面朝上。s圓固持裝 然後主框架傳送機械手106向 單元_窗口的水平高^ 移動’直到到達清洗 傳送機械手106伸展並 20 200941587 . 將晶圓送入清洗單元108。當晶圓被送入清洗單元108 後主杧架傳送機械手1 0 6向下移動少許，將晶圓放置在 清洗早tl 1 08的三個支撐腳上然後移出。用三個支撐腳固 持晶圓的清洗單元108的晶圓固持部件在制動器的控制 下開始旋轉。支撐腳上的機械夹啓動並緊固晶圓以防相對 運動。然後清洗單元的前喷嘴啓動，並向晶圓前表面喷濃 去離子設備中的去離子水，進行預濕並移除殘餘電鑛液。 φ 預濕後，清洗單元的可移動喷嘴移動到晶圓邊緣並向晶圓 邊緣喷1化學槽巾的混合化學品進行邊緣沈積金屬的姓 刻錢。清洗單元108的晶圓固持部件高速旋轉以限制化 學口口在日日圓邊緣較窄的區域内，防止中間區域發生沈積膜 蝕刻。當邊緣金屬膜完全去除後，可移動嘴嘴從清洗單元 中間移出，前喷嘴和後噴嘴啓動並向晶圓兩面喷灑去離子 水’以清洗餘刻的殘餘化學品。清洗工藝完成後，晶圓固 持部件停止旋轉’機械夾打開。主框架傳送機械手⑽伸 ❹騎洗單元1G8中’拿起晶圓並將其移出清洗單元 當一片晶圓（第一片晶圓）的電鍍和清洗工藝完成 後，主框架傳送機械手j 06將第一片晶圓透過加熱單元窗 口 421傳送到熱處理腔1〇4，並將其放置在第—晶圓固持 裝置433上。當主框架傳送機械手1〇6的機械臂移出熱處 理腔104,第-晶圓固持裝置433向下移動到預熱位置將 第一片晶圓預熱一段預定時間。預熱處理後，第一晶圓固 • 持裝置433向下移動並將晶圓放置到加熱盤41丨上，這樣 晶圓就和加熱盤411接觸並加熱一段預定時間。一旦第— 21 200941587 片晶圓的加熱處理結束，第一晶圓固持裝置433向上移動 並將晶圓傳送到冷卻盤413上進行冷卻處理。應該注意的 是，冷卻盤413此時是空間的。當第一片曰曰曰圓進行冷卻處 理時，另一片已經進行了電鍍和清洗處理的晶圓（第二片 晶圓）被主框架傳送機械手106傳送到熱處理腔1〇4，被 第二晶圓固持裝置431接收，並開始預熱和加熱處理。從 而熱處理腔104同時對兩片晶圓進行熱處理。當第一片曰 ❹®的冷卻處理結束後，第—晶圓固持裝置如向上移動: 將其送到-個傳送區，前介面機械手1〇2伸入並將晶圓傳 送出熱處理腔104。此時冷卻盤413閒置下來。第二片晶 圓的加熱處理完成後，第二晶圓固持裝置431將其傳送至 冷卻盤413上進行冷卻處理。當第二片晶圓在進行冷卻處 、 片曰曰圓（第二片晶圓）被傳送到熱處理腔1 〇 4， 、第日日圓固持裝置433接收並進行同樣的處理（預熱， 加“、、冷部處理）。上述在熱處理腔104中進行的工藝是 ❹假定加熱時間比冷卻時間長時才可以進行。如果冷卻時間 比加熱時間長的話，本工藝不同之處將是，當第一片晶圓 在加熱盤411上加熱時’第二片晶圓不能立刻傳送到熱處 理腔104中，直到笙 u _木 』第一片晶圓的剩徐冷卻時間比加熱時間 ", 曰圓的熱處理工藝完成後，晶圓被前介面機械 手102透過冷卻置-# 单几® 口 423傳送出熱處理腔1〇4並被放 置在晶圓盒19?tb ’以待接下來的工藝步驟，比如化學機 - 械抛光。 K > Jy. 針對本發明的首選實施例，也可以設計 22 200941587 不背離本發明基本涵蓋範圍的其他及進一步實施例。本發 ，明涵蓋範圍由中請專利範圍決定。 【圖式簡單說明】 圖1不出了本發明的電沈積系統的透視圖。 圖2不出了本發明的電沈積系統的側視圖。 圖3不出了本發明的電沈積系統的電鍍單元的透視 圖。 圖4不出了本發明的電沈積系統的晶圓固持裝置的 透視圖。 圖5不出了本發明的電沈積系統的熱處理模組的透 視圖。 0 一 中 不出了本發明的電沈積系統的流體分配系統的 示意圖。 圖7不出了本發明的電沈積系統的電控系統的示意 【主要元件符號說明 1 〇.工廢介面 101 ·晶圓裝載琿 10 3.晶圓傳輸盒 105.晶圓固持裝置 107.電鍍單元 109·電解液槽 11.主框架 102.前介面機械手 104.熱處理腔 106.主框架傳送機械手 108.清洗單元 110.氣相預濕棋組 23 200941587 1 12.儲存盒 1 9 1.晶圓定位器 ' 192.晶圓盒 19 lb.下部電解液槽 ’ 192b.上部電解液槽 3 11.電解液供應線路 3 12.控制閥 313.泵 3 14.流量計 315.兩通閥 3 1 6 ·止回閥 317.過濾器 321.管子 321b.電解液供應線路 330.化學槽 3 5 1.量測工具 ❹352.管子 352b.控制閥 353.泵 354.流量計 355.手動閥 357.過濾器 359.兩通氣動閥 3 6 1.定量給料系統 5 11.晶圓夾 521.步進電動機 523.步進電動機 525.伺服電動機 411.加熱盤 4 1 3 .冷卻盤 ^ 421.加熱單元窗口 ❹ 423.冷卻單元窗口 431.第二晶圓固持裝置 433.第一晶圓固持裝置 437.支撐環 438.驅動器 439.支撐臂 441.蓋子 448.流體分配部件 449.流體分配部件 700.電解液腔 701.下部腔體 702.上部腔體 711.環形電極 ， 713.隔離牆 720.氣泡聚結裝置 24Thereafter, the motor 523 starts to rotate the wafer holding device 1 〇 5 back to the vertical position 'and carries the wafer holding device 1 〇 5 into the plating unit 1 〇 7 so that the front surface of the wafer and the electrolyte chamber 7 〇〇 The electrolyte in the upper chamber 702 is in contact. Then start the plating process. By controlling the waveform of the multiple anodes, the sequence and timing of the operation, and the flow rate of the electrolyte, a uniform metal film can be deposited on the wafer. For a detailed description of the electroplating process, please refer to the patent US Pat. No. 6,391,166, "Plating apparatus and methods", which is incorporated herein by reference. In another embodiment, the vapor phase pre-wet device is integrated with the wafer holding device. During the process, the main frame robot picks up the wafer from the transfer cassette and transfers it to the wafer holding device. Before the wafer holding device transfers the wafer to the electrolyte, the pre-wet device is moved and sprinkled onto the surface of the wafer. The pre-wetting process is completed, and the a-side two, _$ Fan Fengjun-round holding device carries the wafer to the electrolyte' to perform the same electric clock process as described above. The circle is moved from the wafer holding device 105 upward to remove the electrolyte from the crystal unit 107. The wafer holding device _ the remaining electricity will carry the wafer at high speed to remove the wafer surface residue. After that, the wafer holding is placed 1〇5 and moved to the receiving position, and the wafer is opened. The main frame transport robot's mechanical unit 105 removes the wafer and flips it face up. s round holding and then the main frame transfer robot 106 moves to the horizontal height of the unit_window until it reaches the cleaning transfer robot 106 stretches and 20 200941587. The wafer is fed to the cleaning unit 108. After the wafer is fed into the cleaning unit 108, the main truss transport robot 1 0 6 moves down a little, and the wafer is placed on the three support legs of the cleaning tl 1 08 and then removed. The wafer holding member of the cleaning unit 108 that holds the wafer with three support legs starts to rotate under the control of the brake. A mechanical clip on the support foot activates and secures the wafer to prevent relative movement. The front nozzle of the cleaning unit is then activated and the deionized water in the deionization apparatus is sprayed onto the front surface of the wafer to pre-wet and remove residual electro-mineral liquid. φ After pre-wetting, the movable nozzle of the cleaning unit moves to the edge of the wafer and sprays a chemical chemical of the chemical kerf to the edge of the wafer for the marginal deposition of the metal. The wafer holding member of the cleaning unit 108 rotates at a high speed to restrict the chemical mouth from being narrow in the area of the edge of the Japanese yen, preventing deposition film etching in the intermediate portion. When the edge metal film is completely removed, the movable nozzle is removed from the middle of the cleaning unit, and the front and rear nozzles are activated and sprayed with deionized water on both sides of the wafer to clean the remaining residual chemicals. After the cleaning process is completed, the wafer holding member stops rotating and the mechanical clamp opens. The main frame transfer robot (10) stretches the wash unit 1G8 to 'pick up the wafer and move it out of the cleaning unit. When the plating and cleaning process of one wafer (the first wafer) is completed, the main frame transfer robot j 06 The first wafer is transferred to the thermal processing chamber 1〇4 through the heating unit window 421 and placed on the first wafer holding device 433. When the robotic arm of the main frame transfer robot 1〇6 is moved out of the heat treatment chamber 104, the first wafer holding device 433 is moved downward to the preheating position to preheat the first wafer for a predetermined time. After the pre-heat treatment, the first wafer holding device 433 is moved downward and the wafer is placed on the heating tray 41, so that the wafer is brought into contact with the heating tray 411 and heated for a predetermined period of time. Once the heat treatment of the - 21 200941587 wafer is completed, the first wafer holding device 433 moves upward and transfers the wafer to the cooling tray 413 for cooling processing. It should be noted that the cooling disk 413 is now spatial. When the first wafer is cooled, another wafer (second wafer) that has been subjected to plating and cleaning is transferred to the heat treatment chamber 1〇4 by the main frame transfer robot 106, and is second. The wafer holding device 431 receives and starts preheating and heat treatment. The heat treatment chamber 104 simultaneously heat-treats the two wafers. When the cooling process of the first sheet of 曰❹® is completed, the first wafer holding device moves upwards: it is sent to a transfer area, and the front interface robot 1 〇 2 projects and transfers the wafer out of the heat treatment chamber 104. . At this time, the cooling disk 413 is idle. After the heat treatment of the second wafer is completed, the second wafer holding device 431 transfers it to the cooling tray 413 for cooling treatment. When the second wafer is cooled, the wafer circle (second wafer) is transferred to the heat treatment chamber 1 〇4, and the first day of the yen holding device 433 receives and performs the same processing (preheating, adding " , cold part processing). The above process in the heat treatment chamber 104 is ❹ assuming that the heating time is longer than the cooling time. If the cooling time is longer than the heating time, the difference in the process will be, when the first When the wafer is heated on the heating plate 411, the second wafer cannot be immediately transferred into the heat treatment chamber 104 until the remaining time of the first wafer of 笙u_wood is lower than the heating time " After the heat treatment process is completed, the wafer is transferred to the heat treatment chamber 1〇4 by the front interface robot 102 through the cooling device _ □ □ 423 and placed in the wafer cassette 19?tb 'to be subjected to the next process steps, such as Chemical Machine - Mechanical Polishing. K > Jy. For the preferred embodiment of the present invention, it is also possible to design 22 200941587. Other and further embodiments that do not depart from the basic scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view of an electrodeposition system of the present invention. Fig. 2 is a side view of the electrodeposition system of the present invention. Fig. 3 shows the electrodeposition system of the present invention. Figure 4 is a perspective view of the wafer holding device of the electrodeposition system of the present invention. Figure 5 is a perspective view of the heat treatment module of the electrodeposition system of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 7 is a schematic view of an electronic control system of an electrodeposition system of the present invention. [Main component symbol description 1 工. Work waste interface 101 · Wafer loading 珲 10 3 Wafer transfer box 105. Wafer holding device 107. Plating unit 109· Electrolyte tank 11. Main frame 102. Front interface robot 104. Heat treatment chamber 106. Main frame transfer robot 108. Cleaning unit 110. Wet chess set 23 200941587 1 12. Storage box 1 9 1. Wafer locator '192. Wafer 19 lb. Lower electrolyte tank '192b. Upper electrolyte tank 3 11. Electrolyte supply line 3 12. Control valve 313. Pump 3 14. Flow meter 315. Two-way valve 3 1 6 · Return valve 317. Filter 321. Tube 321b. Electrolyte supply line 330. Chemical tank 3 5 1. Measuring tool ❹ 352. Tube 352b. Control valve 353. Pump 354. Flow meter 355. Manual valve 357. Filter 359. Two-way pneumatic valve 3 6 1. Dosing system 5 11. Wafer clamp 521. Stepper motor 523. Stepper motor 525. Servo motor 411. Heating plate 4 1 3. Cooling plate ^ 421. Heating unit window 423 423. Cooling unit window 431. Second wafer holding device 433. First wafer holding device 437. Support ring 438. Driver 439. Support arm 441. Cover 448. Fluid dispensing member 449. Fluid dispensing member 700. Lower cavity 702. Upper cavity 711. Ring electrode, 713. Isolation wall 720. Bubble coalescence device 24