TW200940693A - Aqueous dispersion for chemical mechanical polishing, kit for preparing the dispersion, method for preparing aqueous dispersion for chemical mechanical polishing using the kit, and chemical mechanical polishing method for semiconductor device - Google Patents
Aqueous dispersion for chemical mechanical polishing, kit for preparing the dispersion, method for preparing aqueous dispersion for chemical mechanical polishing using the kit, and chemical mechanical polishing method for semiconductor device Download PDFInfo
- Publication number
- TW200940693A TW200940693A TW98103644A TW98103644A TW200940693A TW 200940693 A TW200940693 A TW 200940693A TW 98103644 A TW98103644 A TW 98103644A TW 98103644 A TW98103644 A TW 98103644A TW 200940693 A TW200940693 A TW 200940693A
- Authority
- TW
- Taiwan
- Prior art keywords
- mechanical polishing
- chemical mechanical
- kit
- aqueous dispersion
- preparing
- Prior art date
Links
- 239000006185 dispersion Substances 0.000 title abstract 4
- 238000005498 polishing Methods 0.000 title abstract 4
- 239000000126 substance Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title 2
- 239000004065 semiconductor Substances 0.000 title 1
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 abstract 2
- 239000004471 Glycine Substances 0.000 abstract 1
- QNAYBMKLOCPYGJ-REOHCLBHSA-N L-alanine Chemical compound C[C@H](N)C(O)=O QNAYBMKLOCPYGJ-REOHCLBHSA-N 0.000 abstract 1
- CKLJMWTZIZZHCS-REOHCLBHSA-N L-aspartic acid Chemical compound OC(=O)[C@@H](N)CC(O)=O CKLJMWTZIZZHCS-REOHCLBHSA-N 0.000 abstract 1
- 239000006061 abrasive grain Substances 0.000 abstract 1
- 235000004279 alanine Nutrition 0.000 abstract 1
- 235000001014 amino acid Nutrition 0.000 abstract 1
- 150000001413 amino acids Chemical class 0.000 abstract 1
- 239000003945 anionic surfactant Substances 0.000 abstract 1
- 235000003704 aspartic acid Nutrition 0.000 abstract 1
- OQFSQFPPLPISGP-UHFFFAOYSA-N beta-carboxyaspartic acid Natural products OC(=O)C(N)C(C(O)=O)C(O)=O OQFSQFPPLPISGP-UHFFFAOYSA-N 0.000 abstract 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 abstract 1
- 239000007800 oxidant agent Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Disclosed is an aqueous dispersion for chemical mechanical polishing, which contains (A) a compound having a nitrogen-containing five-membered ring and a carboxyl group, (B) at least one amino acid selected from glycine, alanine and aspartic acid, (C) an oxidizing agent, (D) abrasive grains and (E) an anionic surfactant. The ratio between the amount (WA) [% by mass] of the component (A) contained therein and the amount (WB) [% by mass] of the component (B) contained therein, namely WA/WB, is not less than 0.5 but not more than 50.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008027216 | 2008-02-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200940693A true TW200940693A (en) | 2009-10-01 |
Family
ID=40952029
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW98103644A TW200940693A (en) | 2008-02-07 | 2009-02-05 | Aqueous dispersion for chemical mechanical polishing, kit for preparing the dispersion, method for preparing aqueous dispersion for chemical mechanical polishing using the kit, and chemical mechanical polishing method for semiconductor device |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP5408437B2 (en) |
| TW (1) | TW200940693A (en) |
| WO (1) | WO2009098951A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8900033B2 (en) | 2009-12-01 | 2014-12-02 | Sumco Corporation | Wafer polishing method |
| TWI506097B (en) * | 2012-09-07 | 2015-11-01 | Cabot Microelectronics Corp | Polypyrrolidone polishing composition and method |
| TWI835211B (en) * | 2021-07-22 | 2024-03-11 | 南韓商Ｓｋ恩普士股份有限公司 | Polishing compostion for semiconductor process and method for manufacturing semiconductor device by using the same |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6156630B2 (en) * | 2013-05-24 | 2017-07-05 | Jsr株式会社 | Chemical mechanical polishing aqueous dispersion and chemical mechanical polishing method |
| JP6387250B2 (en) * | 2014-01-15 | 2018-09-05 | 株式会社フジミインコーポレーテッド | Polishing composition manufacturing kit and use thereof |
| US9978609B2 (en) * | 2015-04-27 | 2018-05-22 | Versum Materials Us, Llc | Low dishing copper chemical mechanical planarization |
| JP6697362B2 (en) * | 2016-09-23 | 2020-05-20 | 株式会社フジミインコーポレーテッド | Surface treatment composition, surface treatment method using the same, and method for manufacturing semiconductor substrate |
| US11401441B2 (en) * | 2017-08-17 | 2022-08-02 | Versum Materials Us, Llc | Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications |
| JP7035773B2 (en) * | 2018-04-27 | 2022-03-15 | 三菱ケミカル株式会社 | Polishing composition |
| TW202214795A (en) * | 2020-07-28 | 2022-04-16 | 美商Ｃｍｃ材料股份有限公司 | Cmp composition including anionic and cationic inhibitors |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007273641A (en) * | 2006-03-30 | 2007-10-18 | Fujifilm Corp | Polishing method |
| CN101410956B (en) * | 2006-04-03 | 2010-09-08 | Jsr株式会社 | Aqueous dispersion for chemical mechanical polishing, chemical mechanical polishing method |
| JP2008004621A (en) * | 2006-06-20 | 2008-01-10 | Toshiba Corp | SLURRY FOR USE IN Cu FILM CMP, POLISHING METHOD, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
-
2009
- 2009-01-23 JP JP2009552431A patent/JP5408437B2/en active Active
- 2009-01-23 WO PCT/JP2009/051036 patent/WO2009098951A1/en active Application Filing
- 2009-02-05 TW TW98103644A patent/TW200940693A/en unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8900033B2 (en) | 2009-12-01 | 2014-12-02 | Sumco Corporation | Wafer polishing method |
| TWI506097B (en) * | 2012-09-07 | 2015-11-01 | Cabot Microelectronics Corp | Polypyrrolidone polishing composition and method |
| TWI835211B (en) * | 2021-07-22 | 2024-03-11 | 南韓商Ｓｋ恩普士股份有限公司 | Polishing compostion for semiconductor process and method for manufacturing semiconductor device by using the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5408437B2 (en) | 2014-02-05 |
| WO2009098951A1 (en) | 2009-08-13 |
| JPWO2009098951A1 (en) | 2011-05-26 |
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