200934848 九、發明說明： 【發明所屬之技術領域】 本發明是有關一種紫外光固化膠及應用其之晶片封裝 - 方法，特別是一種可減少殘膠之紫外光固化膠及應用其之曰 片封裝方法。 Ββ 【先前技術】 Ο200934848 IX. Description of the Invention: [Technical Field] The present invention relates to a UV-curable adhesive and a wafer package method therefor, and more particularly to a UV-curable adhesive capable of reducing residual glue and a wafer package using the same method. Ββ [Prior Art] Ο
、因應電子裝置輕薄短小的趨勢，因此產生薄型化封裝的 需求。在薄形化封裝的製程中，需要研磨晶圓的背面，使S曰 圓達到-預定的厚度。研磨晶圓之製程中’須^晶圓之主= 面貼附-保護層’以避免晶圓主動面上之晶片受到損傷。 π心对衣眾程 、丨站日日四设叩云除保謾廣，以逢杆 後續之封裝製程。然而，去除保護層時，可能於晶圓之 面形成殘穋，如此即會影響後續的打線製程。此外，研磨曰 f後即去除保護層，使得後續之切割晶圓製程或設置晶S 程可能污染晶片之主動面，而影響後續打線製程之良;::裝 綜上所述’晶片料製程中如缺晶片之主動 成殘膠或避切粉等之污染便是目前極需努力的目標，。厂 【發明内容】 膠及^對^^題封裝本方發^之二目的是提供—種紫外光固化 保護層易於移除而可減少ς產其，體分㈣^ 化膠：用上：7片二::另:，的是提供-種紫外光固 封裝方法，其是將保護層於設置晶月於 5 200934848 基板後再行移除，因此可避免切割晶圓時之矽粉或是設置晶 片時之銀膠污染晶片之主動面。 * 為了達到上述目的，本發明一實施例之紫外光固化膠包 含一膠體以及一氣體。膠體具有經紫外光照射後，膠體的黏 著性降低的特性；氣體則分散於膠體中。 為了達到上述目的，本發明另一實施例之晶片封裝方 法，其步驟包含：提供一晶圓，其具有一主動面以及一相對 之背面’主動面上排列有多個晶片；貼附一保護層於主動面； Q 固定晶圓；切割晶圓，使多個晶片單體化；將晶片設置於_ 基板之一侧；照射紫外光於保護層，並移除保護層；形成一 引線以電性連接晶片以及基板；以及，模封晶片以及引線， 其中，保護層為前述之紫外光固化膠。 以下藉由具體實施例配合所附的圖式詳加說明，當更容 易瞭解本發明之目的、技術内容、特點及其所達成之功效。 【實施方式】 Ο 請參照圖1a至圖Ik，說明本發明之一較佳實施例之晶片封裝 方法。請參照圖la’首先提供一晶圓^，其具有一主動面 111以及一相對的背面112。主動面1U上排列有多個以半導 體裝程所製造的晶片（未圖示），晶片的導電接點設置於主動 面111上。 接著，於晶圓11之主動面1Π貼附保護層12。於一實 r 施例中，保護層12可為一紫外光固化膠，其包含一膠體121 以及一氣體122。膠體121的特性為經紫外光照射後，膠體 121的黏著性會降低以利於移除。舉例而言，踢體121經紫 外光照射後，膠體121與主動面in的黏著部分會固化，而 6 200934848 的黏著性降低。較佳者，膠體121具有料性。 膠體】21令而形成氣泡，如圖】b所二。舉 例而§，氣體】22可為惰性氣體或是氫氣。 的背如卜伽研顧2來研磨晶圓 fill im11達到—預度。請參照圖1d，之後，將晶 接著，即日基材13上’舉例而言，固定基材13可為一朦帶。 ❹ Ο 嘛，侧113恤。需注意者， 切到B#所“層12仍貼附於晶圓11的主動面111上，因此 的魏不會污染晶圓η的主動面m，如圖le所示。 於基侧㈣咖將其設置 的主動面⑴上，因時，_12仍酬於晶圓11 了晶片113的主動面。^曰片113用之黏著劑不會因溢膝而污染 121與’將保護層12照射紫外光，保護層12之膠體 r. 即可輕易地以移除，例如圖lh所干 113 1^ 少保護…僅可輕‘ 電性====：獅都η心來 以一封裝體16包覆晶片土j 之後進仃楔封製程，亦即 參照圖R，於一實施^ Μ引線15’如圖1J所示1 導電凸塊17。 可於基板14之另—侧形成多個 法，其综= 二發膠^其之晶片封裝* 瑕中以形成氣泡，使得保護層與晶片 7 200934848 的接觸面積相對較小，因此移除保護層後可減少產生殘膠。 此外，保護層是在晶片設置於基板後才移除，因此可避免切 割晶圓時的矽粉或溢膠等污染晶片的主動面，故後續之打線 製程可得到較佳的生產良率。 以上所述之實施例僅是為說明本發明之技術思想及特 點，其目的在使熟習此項技藝之人士能夠瞭解本發明之内容 並據以實施，當不能以之限定本發明之專利範圍，即大凡依 本發明所揭示之精神所作之均等變化或修飾，仍應涵蓋在本 發明之專利範圍内。 【圖式簡單說明】 圖la至圖lk為一示意圖，顯示本發明一較佳實施例之晶片封裝方 法之流程。 【主要元件符號說明】 11 晶圓 111 主動面 112 背面 113 晶片 12 保護層 121 膠體 122 氣體 13 固定基材 200934848 14 15 16 17 2 3 基板 引線 封裝體 導電凸塊 研磨頭 吸取頭In response to the trend of thinner and lighter electronic devices, there is a need for a thin package. In the process of thinning the package, it is necessary to polish the back side of the wafer so that the S 圆 circle reaches a predetermined thickness. In the process of grinding the wafer, the main surface of the wafer is attached to the protective layer to avoid damage to the wafer on the active side of the wafer. π心对衣众程, 丨站 four days set up 叩云除保谩广, to follow the package process. However, when the protective layer is removed, defects may be formed on the surface of the wafer, which may affect the subsequent wire bonding process. In addition, after the 曰f is polished, the protective layer is removed, so that the subsequent dicing of the wafer process or the setting of the crystallization process may contaminate the active surface of the wafer, thereby affecting the subsequent wire bonding process;:: loading the above-mentioned wafer processing process If the lack of wafers, the active residual glue or the avoidance of cutting powder is the goal that is currently in great need. Factory [Invention] The glue and the ^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ Piece 2:: Another:, is to provide a kind of ultraviolet light-solid encapsulation method, which is to remove the protective layer after setting the crystal on the 5 200934848 substrate, thus avoiding the powder or setting when cutting the wafer. The silver paste on the wafer contaminates the active side of the wafer. In order to achieve the above object, an ultraviolet curable adhesive according to an embodiment of the present invention comprises a colloid and a gas. The colloid has the property of reducing the adhesion of the colloid after being irradiated with ultraviolet light; the gas is dispersed in the colloid. In order to achieve the above object, a chip packaging method according to another embodiment of the present invention includes the steps of: providing a wafer having an active surface and a plurality of wafers disposed on an opposite back surface of the active surface; attaching a protective layer The active surface; Q fixed wafer; dicing the wafer to singulate the plurality of wafers; placing the wafer on one side of the _ substrate; illuminating the ultraviolet light on the protective layer, and removing the protective layer; forming a lead to be electrically Connecting the wafer and the substrate; and, molding the wafer and the lead, wherein the protective layer is the aforementioned ultraviolet light curing adhesive. The purpose, technical contents, features and effects achieved by the present invention will be more readily understood from the following detailed description of the embodiments. [Embodiment] Referring to Figures 1a to 1k, a wafer packaging method according to a preferred embodiment of the present invention will be described. Referring to Figure la', a wafer ^ is first provided having an active surface 111 and an opposite back surface 112. A plurality of wafers (not shown) fabricated by a semiconductor package are arranged on the active surface 1U, and the conductive contacts of the wafer are disposed on the active surface 111. Next, the protective layer 12 is attached to the active surface 1 of the wafer 11. In a practical example, the protective layer 12 can be an ultraviolet curable adhesive comprising a colloid 121 and a gas 122. The characteristic of the colloid 121 is that after the ultraviolet light is irradiated, the adhesion of the colloid 121 is lowered to facilitate the removal. For example, after the body 121 is irradiated with ultraviolet light, the adhesive portion of the colloid 121 and the active surface in is solidified, and the adhesion of 6 200934848 is lowered. Preferably, the colloid 121 has a material property. Colloid] 21 orders to form bubbles, as shown in Figure b. For example, §, gas 22 can be an inert gas or hydrogen. The back of the wafer, such as the Buga 2, is used to grind the wafer fill im11 to reach - pre-degree. Referring to Fig. 1d, afterwards, the crystal substrate, i.e., the substrate 13 is exemplified, and the fixed substrate 13 may be an ankle tape. ❹ Ο Well, side 113 shirt. It should be noted that the layer 12 is still attached to the active surface 111 of the wafer 11 so that the Wei does not contaminate the active surface m of the wafer η, as shown in Fig. le. On the active surface (1) of the set, _12 still pays the active surface of the wafer 113 on the wafer 11. The adhesive used for the enamel 113 does not pollute the 121 and the ultraviolet ray of the protective layer 12 The colloidal layer r of the protective layer 12 can be easily removed, for example, 113 l^ is less protected... only lighter 'electricity====: the lion is η heart to be wrapped in a package 16 After the wafer soil j is introduced into the wedge sealing process, that is, referring to the figure R, the first lead 15' is shown as a conductive bump 17 as shown in FIG. 1J. A plurality of methods can be formed on the other side of the substrate 14, = two hair gels ^ chip package * 瑕 to form bubbles, so that the contact area of the protective layer and wafer 7 200934848 is relatively small, so the removal of the protective layer can reduce the generation of residual glue. In addition, the protective layer is placed on the wafer After the substrate is removed, the active surface of the wafer, such as powder or overflow, which can be cut when the wafer is cut, can be avoided, so the subsequent wire bonding process The above-mentioned embodiments are only for explaining the technical idea and characteristics of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement them according to The scope of the invention is defined by the scope of the invention, and the equivalent variations or modifications of the invention are still covered by the scope of the invention. [Fig. 1 to lk is a schematic diagram, A flow chart of a wafer packaging method according to a preferred embodiment of the present invention is shown. [Main component symbol description] 11 wafer 111 active surface 112 back surface 113 wafer 12 protective layer 121 colloid 122 gas 13 fixed substrate 200934848 14 15 16 17 2 3 substrate Lead package body conductive bump grinding head suction head
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