200924206 九、發明說明： 【發明所屬之技術領域】 =明太陽電池及其製造方 一種具有異質接面結構之薄膜太陽電池及其製造方法。4疋 【先前技術】 目前太陽電池係由三五⑽v)族半導體異質接面 或）族半導體同f接面⑽跡細―） 所製得，其相關製程技術之發展亦已趨於成熟。 在美國專利第5,374,564號中，公開了 一種利用膜声 ,來：成IV族半導體接面的方法，即所謂之巧曰 (smart-cut)技術^。 在美國專利第7,〇19,339B2號中，提出了一 非鍺基板上，再姻m_v族轉體„接面 ^ g 之太陽電池的元件結構。 忖N八有间效羊 然而，利用III-V族半導體來製作太 而不符合經濟需求·，而利用較責的鍺作為轉移基 佈植面氫氣的斷開而產生大量的缺陷，會 d 陽能然：了-議太 法有效的降低生產成本。類太“電池的讀結構始終無 為改善習知技術中之上述缺失，申請 、 並-本鎖而不捨之精神，提出本發明「具與研究’ 太陽電池及其製造方法」。藉由本發明，即 200924206 ==了而登石f脚異質接面於薄膜太陽電池之元件結 石夕區域，此時為了去割步驟’斷開面可控制在 3切’所消耗的是較為;宜的娜陷且 的鍺而達 【發明内容】〇此，本發明深具應躲力與產業推廣價值。 膜太結構’其係利用薄200924206 IX. Description of the invention: [Technical field to which the invention pertains] = Ming solar cell and its manufacturer A thin film solar cell having a heterojunction structure and a method of manufacturing the same. 4疋 [Prior Art] At present, the solar cell system is made up of a three-five (10)v) semiconductor heterojunction or a group of semiconductors with a f-junction (10), and the development of related process technologies has matured. In U.S. Patent No. 5,374,564, a method of utilizing film sound to form a Group IV semiconductor junction, the so-called smart-cut technique, is disclosed. In U.S. Patent No. 7, pp. 19,339 B2, a component structure of a solar cell on a non-tantalum substrate, which is re-married with a m_v family of π junctions, is proposed. V-type semiconductors are too produced to meet economic needs. However, the use of the more responsible ruthenium as a transfer of hydrogen for the transfer of the base material creates a large number of defects, which can be used for the purpose of reducing the production. Cost. Class too "The read structure of the battery has not been able to improve the above-mentioned shortcomings in the prior art, the application, and the spirit of the lock, and the present invention "with and research" solar cells and their manufacturing methods. By means of the present invention, that is, 200924206 == and the stone is heterogeneously connected to the component stone area of the thin film solar cell. At this time, in order to cut the step, the "breaking surface can be controlled at 3 cuts" is more suitable; The present invention is deeply embedded in the value of the industry and the value of the industry. Membrane structure too
接面層數崎崎，使此—恤陽貝。 —、提出的薄臈太陽電池包括、基板、至少-多声結 族之不同層。該多層結_位於該第-表面上，且^ 層包括了- 層所組成，因而具有一異質接面結構。電極 二構上，1Φ 刀電極層與一第二部分電極層，其位於該多層 ‘中弟—部分電極層與該第二部分電極層之間具有- 部份電極，細第一 另-也有職料财雜__太陽電池的 -第-if a其包括一基板一第一透明電極層、至少一多層結構 f=電極層’·其中，該第一透明層位於該基板的一第一表 結構餘於糾—咖電極層上且由_之不同半 ===所組成’而具有—異f接面結構；該第二電極層則位 明士面結構上。此第一透明電極結構，加上基板若使用透 ^=^=^=^光從此面進入而吸收，完全避免 根據上述構想，該基板可為一矽基板、一摻雜矽基板與一玻 200924206 璃基板其中之'—。 叫= 上之^想，該絲板之結晶方向可為⑽}、胸與 料層賴想，财躲構較佳wιν族之不同半導體材 根據上述構想，該多層結構是由—矽 層及-秒鍺層其巾之—或其組合卿成。 β、-鍺（Ge) 點其述構想，其中該多層結構係切/鍺/外子井及量子 子點構想，其巾該多層結獅毒辦鍺/㈣子井及量 根據上述構想，其中鍺層的厚度係3至30奈米。 的介Si=?:該絕緣層係由-介電材料二該介電材料 矽，其巾齡特料係二氧切（卿）、氮化 矽（Sl3N4)與氧化給（Hf〇2)其中之一。 乳化 今薄出了—種用於製造一薄膜太陽電池的方法，其中 ㈣膜太陽電池具有—Ιν^導體材之異聽構。、中 材料層於該第-表面上、f —表^，(b)提供—IV族半導體 上，藉以形成由土供一石夕層於該1v族半導體材料層 異質接面結構㈣離賴異聽構；對 植介面；以及⑹接i t植’以於該石夕基板中形成一氣離子佈 合（例如經由晶15接、^、基板，並使該承載基板與該石夕層接 子佈植介面斷裂而ί ^ i )」並經過加熱使該縣板中的氫離 生第二表面，藉以形成該薄膜太陽電池。 200924206 可斜兮ί谢^構心在开^成該薄膜太陽電池之里質接τϋέ士拔α 可對進彳博肺編/三表面%=^冓後， i3SSS== 第一電極層於該第三表曰面=緣方式包括：提供一 隔，藉以將該第一雷搞爲八_，、於该第™電極層中形成至少一間 電極層’並使該第三表;二:工::二,極層與-第二部分 緣層上，針=提供—第二電極層於該絕 極層隔離。另-種可能的;:式接^電2層和該第二部分電 基板上，並使碎7ic截宜4式匕括·棱供一第一電極層於該承載 提供-第二電極層於電極層與該石夕層接合；以及 晶圓==成式或; ⑽:!束格電==== 本案得藉由下删纽詳細酬，俾得时讀者更深入了 解 【實施方式】 質接明係姻於薄膜太陽電池元件結構上的iv族半導體異 ③二7二層及==:層)結構來取代既有久-v族 效率之_^電=特同質接崎構，絲得臭有高 月 > 閱第-圖⑷至第-υ(Η)，其係根據本發明第一實施例 200924206 结構示意圖’用以說明本發明之具有1v族半 導體異質接面之_太陽電池的製作過程與結構。 - 在石夕基板1〇1上形成—錯層102，如第一圖(A)所 相式（例如··分子束蟲晶方式、電漿辅助 該ί層ιοί積》、匕予氣相沉積法等）而於該石夕基板101上形成 ^ ^ ί^Γι〇Γ^^；ιι103 ^ ^ 現。θ 、乂成亦可藉由磊晶方式或晶圓鍵結方式而實 _ 對離子（η+)佈植，以於該石夕基板 載基如广圖(C)所示。再將承 r基板_裂二以離===處理齄 貝接面結構120，如4-_)與第—_所示。 如分離表面1〇10,進行習知的平坦化製程(例 C, 電池Ιΐ==以 (::4-電極層140分隔為彼此隔離的至少兩“二⑼圖 上形並於該絕編 本發明之具有IV ^導體第二雜層⑽，即完成了 圖(G)與第—圖(F)所示。、吳接面之薄膜太陽電池卜如第一 在—較佳具體實施例中，前沭 -除了可由辦多層結構 200924206 H &7_销異質接面結構，該ιν 娜構堆疊或 (^)，用發明第二實施例之薄膜太陽電池的結構示意 二電池族料體異質接面之另一種薄膜 二會’如第二圖(A)與第二_所示，本發明之第 :陽雷、也m ^疋^與第—實施例相同的方式形成本發明之薄膜 資述_1=不再重複 體異質接面結構12G接合承載基板1GG * !Γπ^ΪΓ透明電極m作為第—電極層，紐再將該ί;ί 側形成弟二電極層180，如第二圖(C)所示。 < Ο 嶋=ίΐ!Λ構想’如第二圖(C)所桃賴可作為金氧半 ^ ii少質型則_等常用之太陽電池結構之ΐ 板基板(如_基板等）’便可讓太陽光從該ΐ ‘ 進入，而避免電極層會擋住照射光的問題。The number of layers of the junction is osaki, making this shirt yangbei. — The proposed thin tan solar cell comprises, a substrate, and at least a different layer of a multi-sound group. The multilayer junction is located on the first surface, and the layer comprises a layer and thus has a heterojunction structure. In the electrode structure, a 1Φ blade electrode layer and a second partial electrode layer are located between the multilayer 'the middle-partial electrode layer and the second partial electrode layer have a part electrode, and the first one is also __ a solar cell---a includes a substrate-first transparent electrode layer, at least one multilayer structure f=electrode layer '·wherein the first transparent layer is located in a first table of the substrate The structure is on the correction electrode layer and consists of different halves === and has an iso-f junction structure; the second electrode layer is on the surface of the surface. The first transparent electrode structure, if the substrate is absorbed by using the light passing through the surface, completely avoids the above concept, the substrate can be a germanium substrate, a doped germanium substrate and a glass 200924206 Among the glass substrates, '-. Called = 上之^想, the crystal direction of the silk plate can be (10)}, the chest and the material layer are thought, the different materials of the wιν family are better. According to the above concept, the multi-layer structure is composed of - 矽 layer and - The second layer of the towel - or a combination of it. β, -锗(Ge) point conception, wherein the multi-layer structure is a cut/锗/outer well and a quantum sub-point concept, and the multi-layered lion poisoning/(four) sub-well and quantity according to the above concept, wherein The thickness of the enamel layer is 3 to 30 nm. The Si=?: the insulating layer is made of a dielectric material, the dielectric material is 矽, and the aging material is dioxin, lanthanum nitride (Sl3N4) and oxidized (Hf〇2). one. Emulsification is now thin - a method for manufacturing a thin film solar cell, wherein (4) the film solar cell has a heterogeneous structure of - Ι ν ^ conductor material. The medium material layer is on the first surface, f-table, and (b) is provided on the -IV semiconductor, thereby forming a heterogeneous junction structure of the 1v semiconductor material layer by the soil supply layer (4) a device; and (6) a substrate for forming a gas-ion bonding in the substrate (for example, via a substrate, a substrate, and a carrier interface between the carrier substrate and the layer) Breaking and ί ^ i )" and heating to cause hydrogen in the county plate to be free from the second surface, thereby forming the thin film solar cell. 200924206 Can be slanted 兮 谢 ^ ^ 构 在 构 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该 该The third surface of the surface includes: providing a gap by which the first lightning is made into eight_, forming at least one electrode layer in the first electrode layer and making the third table; :: Two, the pole layer and the second part of the edge layer, the needle = provided - the second electrode layer is isolated from the anode layer. Another possibility is: a type of electrical layer 2 and the second part of the electrical substrate, and the fragment 7ic is cut into a shape to provide a first electrode layer on the carrier to provide a second electrode layer The electrode layer is bonded to the stone layer; and the wafer==form or; (10):! bundle grid==== The case has to be detailed by the next step, and the reader has a deeper understanding of the implementation method. It is said that the iv-type semiconductor is different from the structure of the thin-film solar cell component, and the structure of the iv-group semiconductor is different from the γ-electricity of the long-v family.臭有高月> Read-图(4) to υ(Η), which is a schematic diagram of the structure of the first embodiment of the present invention 200924206, which is used to illustrate the solar cell of the present invention having a 1v semiconductor heterojunction Production process and structure. - Forming a - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - The method is formed on the Shishi substrate 101 by ^^ ί^Γι〇Γ^^; ιι103 ^^. θ and 乂 can also be implanted by epitaxial or wafer bonding, and the ion (η+) is implanted so that the substrate is as shown in the general image (C). The r-substrate _ split is then treated to the 齄 joint structure 120, such as 4-_) and __. If the surface 1〇10 is separated, a conventional planarization process is performed (Example C, battery Ιΐ == at least two "two (9) maps separated by (:: 4-electrode layer 140 separated from each other) and in the absolute version The invention has an IV ^ conductor second impurity layer (10), that is, the figure (G) and the first figure (F) are completed. The film junction solar cell of the Wu junction is as in the first embodiment - a preferred embodiment, Front 沭 - In addition to the multi-layer structure 200924206 H & 7_ pin heterojunction structure, the ιν 构 堆叠 stack or (^), using the structure of the thin film solar cell of the second embodiment of the invention to indicate the heterogeneous connection of the two battery family The other film of the surface will be as shown in the second figure (A) and the second type, and the first aspect of the invention: the positive thunder, also the m ^ 疋 ^ in the same manner as the first embodiment to form the film of the present invention _1=Do not repeat the bulk heterojunction structure 12G to bond the carrier substrate 1GG*!Γπ^ΪΓthe transparent electrode m as the first electrode layer, and then form the second electrode layer 180, as shown in the second figure ( C). < Ο 嶋=ίΐ!Λ ' ' 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如 如Substrate (such as a substrate or the like _) 'can make the sunlight from ΐ' enter, to avoid problems electrode layer will block the irradiated light.
述實施例外，本發明之薄膜太陽電池的IV族半導體異 二i 層矽層與鍺層堆疊而成;如第三圖(學S 其分別表示具有由石夕層101與錯層102交互堆疊而奸 層石夕層與鍺層(或销層)交互堆疊形成之IV族半導 200924206 結構 以上 至於具 電流電虔特性圖則 三層 Γ 士ί广厚度與電池效率_係。由第六圖可“f腺女㈣ 池中矽/錯/石夕堆疊結構的單 ：： ' 田魏域 池的效率最佳化$ 層厚度達⑽時，可使太陽電 圖則如16%’而此—薄膜太陽電池的電流 如第五_示场4結構之薄膜太陽電池的 i-处Litt第六圖，其說明根據本發明之薄膜太陽電池中 商電壓特性 質接面月根據本發明，藉由調整1v族半導體異 構的靖層之層數或厚度，可達到提升1有此-镇 巧，之效果，而使該薄膜4電2效ΐ 本發明所捤出之r 又平（約12〇/〇)。 τ'λΓ^出方法可在與目前製程方法整合的情形下，读祕 矣九 導體異質接面結構形成於薄膜太陽電池之元件上，、 的傳統薄膜太陽電池之效率:約；。此外 成另 方式來取代現有πι·ν族半導體面二ϊ 薄 本發明實為—_、進步且具產業實_之發明， 具發展價值。 深 然不脫如 本發明得由熟悉技藝之人任紐思*為諸般修傅， 200924206 附申請範圍所欲保護者。 【圖式簡單說明】 第一圖(A)至第一圖(H)係根據本發明第—實施例之薄膜太 陽電池的結構示意圖； 第二圖(A)至第二圖(C)係根據本發明第二實施例之薄膜太 陽電池； 'Except for the implementation, the Group IV semiconductor hetero-I-layer layer of the thin-film solar cell of the present invention is stacked with the ruthenium layer; as shown in the third figure (the S is respectively represented by the interaction of the sap layer 101 and the stagger layer 102. The group IV semi-conductor formed by the stacking of the layer of the scorpion layer and the layer of enamel (or pin layer) 200924206 above the structure with the current characteristics of the electric layer, the thickness of the three layers of the thickness and the efficiency of the battery _ system. From the sixth picture "f gland female (four) pool in the 矽 / wrong / Shi Xi stack structure of the single:: 'Tianwei domain pool efficiency optimization $ layer thickness up to (10), the solar power map can be as 16%' and this - film The current of the solar cell is as shown in the fifth image of the fifth-lit field solar cell of the fifth-field field solar cell, which illustrates the commercial voltage characteristic of the thin film solar cell according to the present invention. According to the present invention, by adjusting 1v The number or thickness of the heterogeneous layer of the semiconductor can be improved by 1 - the effect of the town, and the film 4 is electrically effective. The r of the invention is flat (about 12 〇 / 〇 The τ'λΓ^ method can be read in the case of integration with the current process method, read the secret nine-conductor heterojunction The surface structure is formed on the element of the thin film solar cell, and the efficiency of the conventional thin film solar cell is about: in addition to replacing the existing πι·ν family semiconductor surface ϊ thin, the invention is _, advanced and industrial The invention of the real _ has a development value. It is not worthy of the invention. The person who is familiar with the technique is Renius*, and the person who wants to protect the scope of the application. 200924206 A) to FIG. 1(H) is a schematic structural view of a thin film solar cell according to a first embodiment of the present invention; and second to (A) to (C) are thin film solar cells according to a second embodiment of the present invention; ; '
第三圖(A)係根據本發明第三實施例之薄膜太陽電池； 第二圖(B)係根據本剌第四實施例之薄膜太陽電池. 池4:.說明根據本發明之薄膜太陽電池中錯層層數與電 薄膜1陽太陽電池之電流電壓特性圖’該 池效說Γί縣發明之_场電财料厚度與電The third diagram (A) is a thin film solar cell according to a third embodiment of the present invention; and the second diagram (B) is a thin film solar cell according to the fourth embodiment of the present invention. Pool 4: Describes a thin film solar cell according to the present invention. The current and voltage characteristics of the middle layer of the wrong layer and the electric film 1 Yang solar cell 'The effect of the pool Γ 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县 县
第七圖係根據本發明之蓮 中鍺層厚度為3〇nm。 膜太陽電池之電流電壓 特性圖，其 【主要元件符號說明】 1、2、3A、3B 薄膜太陽電池 100 承載基板 101 矽基板 1010 氫離子佈植介面 1010， 分離表面 102 錯層 103 秒層 200924206 110 、 140 第一電極層 120 、 120， IV族半導體異質接面結構 150 間隔 160 絕緣層 180 第二電極層 13The seventh figure is a layer thickness of the lotus layer in accordance with the present invention of 3 〇 nm. Current and voltage characteristic diagram of membrane solar cell, its main component symbol description 1, 2, 3A, 3B thin film solar cell 100 carrier substrate 101 矽 substrate 1010 hydrogen ion implantation interface 1010, separation surface 102 staggered layer 103 seconds layer 200924206 110 , 140 first electrode layer 120, 120, group IV semiconductor heterojunction structure 150 spacing 160 insulating layer 180 second electrode layer 13