200924176 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種光感測器’更特別有關於一種使用 光敏薄膜電晶體的光感測器。 【先前技術】 市面上的光感測器，一般都採用電荷耦合元件（charge C〇Upled Device ; CCD )或者是互補式金屬氧化半導體 (C〇mPlementary Metal_0xide_Semic〇nduct〇r; cm〇s)元 件作為光感應元件。由於CCD及CM〇s元件係以半導體製 程技術製成，具有解析度高等優點，因此常用在數位相機、 數位攝影機、傳真機以及掃描器等裝置上。 然而，由於CCD及CMOS元件係以半導體技術製成， 且其面積一般都不大。如第i圖所示，若欲製作大型的光感 測器，一般係將CCD或CMOS元件120設置在大型的基板 110上，並藉由連接線13〇將各個CCD或CM〇s元件12〇 組合連接，以將CCD或CM0S元件12〇感應光所產生的感 應信號傳送至外界。然而，上述的大型光感測器其製作困 難，成本相當昂貴。 有鑑於此，便有需要提出一種大型的光感測器，以解決 上述問題。 【發明内容】 本發明之目的在於提供一種光感測器，藉由光感測元件 來感測光線’能夠設置在大型的透明基板上，藉此可製造出BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photosensor' more particularly to a photosensor using a photosensitive thin film transistor. [Prior Art] The photosensors on the market generally use a charge coupled device (CCD) or a complementary metal oxide semiconductor (C〇mPlementary Metal_0xide_Semic〇nduct〇r; cm〇s) component. Light sensing element. Since CCD and CM〇s components are manufactured by semiconductor process technology and have high resolution, they are commonly used in digital cameras, digital cameras, fax machines, and scanners. However, since CCD and CMOS components are made by semiconductor technology, their area is generally small. As shown in the figure i, if a large-scale photo sensor is to be produced, the CCD or CMOS device 120 is generally disposed on the large substrate 110, and each CCD or CM device component 12 is turned on by the connection line 13〇. The connection is combined to transmit an inductive signal generated by the CCD or CMOS component 12 to the outside. However, the above-mentioned large-sized photo sensor is difficult to manufacture and is relatively expensive. In view of this, there is a need to propose a large-scale photo sensor to solve the above problems. SUMMARY OF THE INVENTION An object of the present invention is to provide a photo sensor capable of being fabricated by sensing light rays by a light sensing element, which can be disposed on a large transparent substrate.
01291-TW / A07060-TW 200924176 大型的透明光感測器。 為達上述目的，本發明第—實施例之光感測器，包含： 一基板，基板上設置有複數條間極線，以及複數條與閘極線 相交的讀取線。在兩相鄰的閘極線以及兩相鄰的讀取線之間 的區域内’踔置有一開關元件，例如是一非晶矽薄膜電晶 體，以及一光感測元件，例如是另一非晶矽薄膜電晶體，其 閘極皆與鄰近的閘極線電性連接，光感測元件並透過開關元 ^、件與讀取線電性連接。其中，本實施例之光感測器還包含有 遮光層，覆蓋在基板上，並遮蔽住開關元件。 本發明之光感測器在運作時，閘極線係作為掃描線，用 以開啟光感測元件與開關元件。另外，光感測元件與開關元 件的閘極端須施以適當的電壓，以使光感測元件與開關元件 能夠運作。由於非晶矽材料會對光有所反應，故當光入射至 光感測元件的主動層時·，會產生光電流，由讀取線讀取此光 電流信號，並藉由閘極線的掃描以及讀取線所讀取的光電流 Q 信號，判斷出究竟是哪一個光感測元件接收到光線，以及該 光線的強度。此外，開關元件係用以控制光感測元件所產生 的光電流信號的輸出。由於開關元件被遮光層所遮蔽，故光 線無法穿過遮光層而到達開關元件的主動層，因此外界的光 線並不會影響開關元件的運作。 本發明第二實施例之光感測器大體上相同於第一實施例 之光感測器，但遮光層係同時遮蔽光感測元件與開關元件。 光感測元件的不透明閘極上，另設置有一開口，使得外界的 光線在通過透明的基板後，可穿過閘極上之開口，到達主動 01291-TW M07060-TW 6 200924176 層以產生光電流，藉此達到感測光線的目的。 【實施方式】 為了讓本發明之上述和其他目的、特徵、和優點能更明 顯，下文特舉本發明實施例，並配合所附圖示，作詳細說明 如下。此外，於本發明各實施例之說明中，類似元件係以相 同之符號表示，於此合先述明。 請參考第2圖，本發明第一實施例之光感測器2〇〇包含 ° 有一基板210，基板210上設置有複數條閘極線（gate hne)220,以及複數條與閘極線22〇相交的讀取線卜⑶如加 line)230，兩相鄰的閘極線220以及兩相鄰的讀取線23〇之 間形成一區域240。 在每一區域240内的閘極線22〇與讀取線23〇之交界 處，設置有一開關元件250，例如是一非晶矽薄膜電晶體， 以及一光感測元件260，例如是另一非晶矽薄膜電晶體，其 各自的閘極351、361與鄰近的閘極線22〇電性連接，光感 0 測元件2 6 0並透過開關元件2 5 0與讀取線2 3 0電性連接。另 外，光感測器200還包含有遮光層280，覆蓋在基板2 1〇上， 並遮蔽住開關元件250。 請參考第3圖，其顯示有本發明第一實施例之光感測器 2〇〇之開關元件250、光感測元件260結構的第一態樣。一 第一金屬層，成在基板21 0上，分別做為開關元件2 5 〇與光 感測元件260的閘極351、361，而閘極絕緣層356則沈積 於基板210上’並覆蓋閘極351、361。在閘極351、361上 方的閘極絕緣層3 56上，則利用微影製程（lithography)分別 01291-TW / A07060-TW 7 200924176 形成有以非晶矽製成的主動層354、364以及摻雜層355、 365。在摻雜層355上、閘極351的兩側，分別設置有由第 二金屬製成的源極352與汲極353 ;而在摻雜層365上、閑 極36i的兩-側，亦分別設置有由第二金屬製成的源極362 與汲極363。在閘極絕緣層356上形成有保護層（passivati〇n layer)357，覆蓋源極352、汲極353以及源極362與汲極 363。遮光層280覆蓋在閘極351上方的保護層357上，用 以遮蔽開關元件250。 參考第4圖，其顯示有本發明第一實施例之光感測器2〇〇 之開關元件250、光感測元件260結構的第二態樣。開關元 件2 5 0、光感測元件2 6 0的閘極3 5 1、3 61係形成在基板2 1 〇 上’閘極絕緣層3 5 6則沈積於基板2 1 0上，並覆蓋閘極3 5 1、 3 6 1。在閘極絕緣層3 5 6上、閘極3 5 1的兩側，分別設置有 由第一金屬製成的源極3 5 2與汲極3 5 3 ;而在閘極絕緣層3 5 6 上、閘極3 61的兩側，亦分別設置有由第二金屬製成的源極 3 6 2與沒極3 6 3。在閘極絕緣層3 5 6上、源極3 5 2與汲極3 5 3 。 之間，形成有非晶矽製成的主動層354;而在閘極絕緣層356 上、源極362與汲極363之間，亦形成有非晶矽製成的主動 層364。遮光層280覆蓋在主動層354、源極352與汲極353 上，用以遮蔽開關元件250。 參考第5圖’其顯示有本發明第一實施例之光感測器2〇〇 之開關元件250、光感測元件260結構的第三態樣。開關元 件250的金屬源極352與汲極353係形成在基板210上且相 互分離：而光感測元件260的金屬源極362與汲極3 63形成 在基板210上且相互分離。非晶吩製成的主動層354形成在 01291-TW M07060-TW 8 200924176 源極3 5 2、沒極3 5 3盘其j：c； 〇 1 Λ , - ”基板210上；而非晶矽製成的主動層 364則形成在源極362、及極⑹與基板㈣上。閘極絕緣 層州、366分別形成在主動層3M與^上。開關元件25〇 的閘極351形成在閘極絕緣層356上，而光感測元件26〇 的閘極361則开v成在閘極絕緣層366上。遮光層彻覆蓋在 閘極3 5 1、閘極絕续展q ^ _ 緣層356、主動層354、源極352與汲極 3 5 3上’用以遮蔽開關元件2 $ 〇。 參考第6圖，其顯示有本發明第一實施例之光感測器2〇〇01291-TW / A07060-TW 200924176 Large transparent light sensor. In order to achieve the above object, a photosensor according to a first embodiment of the present invention comprises: a substrate on which a plurality of inter-pole lines are disposed, and a plurality of read lines intersecting the gate lines. In the region between two adjacent gate lines and two adjacent read lines, a switching element is disposed, such as an amorphous germanium film transistor, and a light sensing element, such as another non- In the wafer thin film transistor, the gates are electrically connected to the adjacent gate lines, and the light sensing elements are electrically connected to the read lines through the switching elements. Wherein, the photo sensor of the embodiment further comprises a light shielding layer covering the substrate and shielding the switching element. In operation of the photosensor of the present invention, the gate line acts as a scan line for turning on the light sensing element and the switching element. In addition, the light sensing element and the gate terminal of the switching element are subjected to an appropriate voltage to enable the light sensing element and the switching element to operate. Since the amorphous germanium material reacts to light, when light is incident on the active layer of the light sensing element, a photocurrent is generated, and the photocurrent signal is read by the read line and is gated by the gate line. Scan and read the photocurrent Q signal read by the line to determine which light sensing element receives the light and the intensity of the light. In addition, the switching element is used to control the output of the photocurrent signal generated by the photo sensing element. Since the switching element is shielded by the light shielding layer, the light cannot pass through the light shielding layer and reach the active layer of the switching element, so the external light does not affect the operation of the switching element. The photo sensor of the second embodiment of the present invention is substantially the same as the photo sensor of the first embodiment, but the light shielding layer simultaneously shields the photo sensing element from the switching element. An opaque gate of the light sensing element is further provided with an opening, so that the external light passes through the transparent substrate and passes through the opening on the gate to reach the active 01291-TW M07060-TW 6 200924176 layer to generate photocurrent. This achieves the purpose of sensing light. The above and other objects, features, and advantages of the present invention will become more apparent from the embodiments of the invention. Further, in the description of the embodiments of the present invention, the like elements are denoted by the same reference numerals and are described in the foregoing. Referring to FIG. 2, the photo sensor 2 of the first embodiment of the present invention includes a substrate 210. The substrate 210 is provided with a plurality of gate lines 220, and a plurality of gate lines 22 The intersecting read line (3) is lined 230, and a region 240 is formed between two adjacent gate lines 220 and two adjacent read lines 23A. At the junction of the gate line 22A and the read line 23A in each of the regions 240, a switching element 250 is provided, such as an amorphous germanium film transistor, and a light sensing element 260, such as another The amorphous germanium thin film transistor has its respective gates 351 and 361 electrically connected to the adjacent gate line 22, and the light sensing element is measured and transmitted through the switching element 250 and the reading line 2 3 0. Sexual connection. In addition, the photo sensor 200 further includes a light shielding layer 280 covering the substrate 2 1 and shielding the switching element 250. Referring to Fig. 3, there is shown a first aspect of the structure of the switching element 250 and the photo sensing element 260 of the photosensor 2 of the first embodiment of the present invention. A first metal layer is formed on the substrate 21 0 as a switching element 25 5 and a gate 351 , 361 of the photo sensing element 260 , respectively, and a gate insulating layer 356 is deposited on the substrate 210 'and covers the gate Extreme 351, 361. On the gate insulating layer 3 56 over the gates 351, 361, active layers 354, 364 and doped with amorphous germanium are formed by lithography, respectively, 01291-TW / A07060-TW 7 200924176 Miscellaneous layers 355, 365. On the doped layer 355, on both sides of the gate 351, a source 352 and a drain 353 made of a second metal are respectively disposed; and on the doped layer 365, the two sides of the idler 36i are also respectively A source 362 and a drain 363 made of a second metal are provided. A passivation layer 357 is formed on the gate insulating layer 356, covering the source 352, the drain 353, and the source 362 and the drain 363. A light shielding layer 280 is overlying the protective layer 357 over the gate 351 to shield the switching element 250. Referring to Fig. 4, there is shown a second aspect of the structure of the switching element 250 and the photo sensing element 260 of the photosensor 2A of the first embodiment of the present invention. The switching element 250, the gates 3 5 1 and 3 61 of the photo sensing element 2 60 are formed on the substrate 2 1 ' 'the gate insulating layer 3 5 6 is deposited on the substrate 2 1 0 and covers the gate Extreme 3 5 1 , 3 6 1 . On both sides of the gate insulating layer 365 and the gate 315, a source 3 5 2 and a drain 3 5 3 made of a first metal are respectively disposed; and in the gate insulating layer 3 5 6 On both sides of the upper and the gates 3 61, a source 3 6 2 and a gate 3 3 3 made of a second metal are also respectively disposed. On the gate insulating layer 3 5 6 , the source 3 5 2 and the drain 3 5 3 . An active layer 354 made of amorphous germanium is formed between them; and an active layer 364 made of amorphous germanium is formed on the gate insulating layer 356 and between the source 362 and the drain 363. The light shielding layer 280 is covered on the active layer 354, the source 352 and the drain 353 to shield the switching element 250. Referring to Fig. 5, there is shown a third aspect of the structure of the switching element 250 and the photo sensing element 260 of the photosensor 2A of the first embodiment of the present invention. The metal source 352 and the drain 353 of the switching element 250 are formed on the substrate 210 and are separated from each other: the metal source 362 and the drain 3 63 of the photo sensing element 260 are formed on the substrate 210 and separated from each other. An active layer 354 made of amorphous phen is formed at 01291-TW M07060-TW 8 200924176 source 3 5 2, no pole 3 5 3 disk, j:c; 〇1 Λ , - "on substrate 210; and amorphous 矽The active layer 364 is formed on the source 362, the pole (6) and the substrate (4). The gate insulating layer states 366 are respectively formed on the active layers 3M and ^. The gate 351 of the switching element 25A is formed at the gate. On the insulating layer 356, the gate 361 of the photo sensing element 26 is opened on the gate insulating layer 366. The light shielding layer is completely covered on the gate 3 5 1 and the gate is continuously extended q ^ _ edge layer 356 The active layer 354, the source 352 and the drain 353 are used to shield the switching element 2 〇. Referring to FIG. 6, there is shown a photosensor 2 according to the first embodiment of the present invention.
之開關7G件250、光感測元件26〇結構的第四態樣。開關元 件250 A感測元件26〇的非晶矽主動| ”4、364形成在 基板210上帛關元件25〇的金屬源極⑸與没極形成 動層354上且相互分離；而光感測元件2⑼的金屬源極 62 ,、；及極363則形成在主動層364上且相互分離。間極絕 緣層356形成在源極352、汲極⑸與主動層354上，而閘 和、邑緣層366則形成在源極362、汲極363與主動層上。 P繼件250的閘極351形成在閘極絕緣層356上，而光感 元件260的間極361則形成在閘極絕緣層366上。遮光層 8〇覆蓋在閘極351、閘極絕緣層356、主動層354、源極 352與汲極353上，用以遮蔽開關元件25〇。 本發明之光感測器2〇〇在運作時，閘極線22〇係作為掃 描線’用以開啟開關元件25〇、光感測元件26〇;另外，開 :元件250、光感測元件26〇的閘極35i、端須施以適 田的電壓’以使開關元件25〇 '光感測元件260能夠運作。 由於非晶石夕材料會對光有所反應，故當光人射至光感測元件 260的主動層364時，會產生光電流，由讀取線23〇讀取此The switch 7G member 250, the fourth aspect of the light sensing element 26〇 structure. The switching element 250A senses the element A's amorphous germanium active|"4, 364 is formed on the substrate 210 on the metal element (5) of the switching element 25A and the electrodeless forming layer 354 and is separated from each other; and the light sensing The metal source 62, and the pole 363 of the element 2 (9) are formed on the active layer 364 and separated from each other. The interpole insulating layer 356 is formed on the source 352, the drain (5) and the active layer 354, and the gate and the rim A layer 366 is formed on the source 362, the drain 363 and the active layer. The gate 351 of the P-via 250 is formed on the gate insulating layer 356, and the inter-pole 361 of the photosensitive element 260 is formed on the gate insulating layer. The light shielding layer 8 is covered on the gate 351, the gate insulating layer 356, the active layer 354, the source 352 and the drain 353 to shield the switching element 25A. The photo sensor of the present invention 2〇〇 In operation, the gate line 22 is used as the scan line 'to turn on the switching element 25 〇 and the light sensing element 26 〇; in addition, the element 250, the gate 35i of the photo sensing element 26 、, the end must be applied The voltage of the field is 'to make the switching element 25 〇' the light sensing element 260 can operate. Since the amorphous stone material is opposite to the light , So that when the light sensing element 260 of the active layer 364 to the incident light, the generated photocurrent is read by this reading line 23〇
01291-TW / A07060-TW 200924176 光電流信號’並藉由閘極線220的掃描以及讀取線230所讀 取的光電流信號’判斷出究竟是哪一個光感測元件260接收 到光線，以及該光線的強度。此外’開關元件250在本發明 的作用係做為開關，用以控制光感測元件260所產生的光電 流信號的輸出。由於開關元件25〇被遮光層28〇所遮蔽，故 光線無法穿過遮光層280而到達開關元件250的主動層 3 54 ’因此外界的光線並不會影響開關元件25〇的運作。 參考第7圖，本發明第二實施例之光感測器7〇〇大體上 相同於第一實施例之光感測器2〇〇，但遮光層280係同時遮 蔽開關元件250與光感測元件260。 為使光感測器700的光感測元件260能夠感測到外界的 光線’參考第8圖，本發明第二實施例之光感測器7〇〇之開 關元件250、光感測元件260結構的第一態樣，係大體上相 同於第3圖之開關元件250 '光感測元件260的結構，但光 感測元件260的不透明閘極361上，另設置有一開口 770， 使得外界的光線在通過透明的基板2 1 〇後，可穿過閘極3 61 上之開口 770，到達主動層364以產生光電流，藉此達到感 測光線的目的。 另外，參考第9圖’本發明第二實施例之光感測器7〇0 之開關元件250、光感測元件260結構的第二態樣，係大體 上相同於第4圖之開關元件250、光感測元件260的結構， 但光感測元件260的不透明閘極361上，另設置有一開口 7 7 0，使得外界的光線在通過透明的基板2 1 〇後，可穿過閘 極361上之開口 770，到達主動層364以產生光電流，藉此 01291-TW/A07060-TW 10 200924176 達到感測光澡的目的。 _本發月之光感測器可利用現有的液晶顯示器之製造技 術將閘極線、讀取線以及非晶石夕薄膜電晶體形成在大型的 玻璃基板上’在薄膜電晶體以及相闕元件設計成適當的大小 下，本發明之光感測器可擁有很高的透明度，具有一些特殊 的應用’例如可將本發明之光❹！器放置於具圖像的紙張或 者是顯示ϋ前，用來相周遭的光線變化，但又不會影 影像的顯示。另外，本發明之光感測器之非晶石夕薄 膜電曰曰體可用透明的材料製成，可藉由增加非晶石夕薄膜電曰 感測器的透明度。 &胃罡髖忐 雖然本發明已以前述較- ^ 定太恭日日/ / ▲ 疋軚仏實細例揭不，然其並非用以限 圍内\ 4 7熟習此技#者，在不脫離本發明之精神和_ 圍内’备可作各種之更動與修改。 知 視後附之申請專利範圍所界定者為準。發月L圍當01291-TW / A07060-TW 200924176 The photocurrent signal 'and by the scanning of the gate line 220 and the photocurrent signal read by the reading line 230' determines which light sensing element 260 receives the light, and The intensity of the light. Further, the switching element 250 functions as a switch in the present invention for controlling the output of the photocurrent signal generated by the photo sensing element 260. Since the switching element 25 is shielded by the light shielding layer 28, light cannot pass through the light shielding layer 280 and reaches the active layer 3 54 ' of the switching element 250. Therefore, external light does not affect the operation of the switching element 25A. Referring to FIG. 7, the photo sensor 7A of the second embodiment of the present invention is substantially the same as the photo sensor 2A of the first embodiment, but the light shielding layer 280 simultaneously shields the switching element 250 and the light sensing. Element 260. In order to enable the light sensing element 260 of the photo sensor 700 to sense the light of the outside world, the switching element 250 and the light sensing element 260 of the photosensor 7 of the second embodiment of the present invention are referred to FIG. The first aspect of the structure is substantially the same as the structure of the light sensing element 260 of the switching element 250 of FIG. 3, but the opaque gate 361 of the light sensing element 260 is further provided with an opening 770, so that the external After passing through the transparent substrate 2 1 , the light can pass through the opening 770 on the gate 3 61 to reach the active layer 364 to generate a photocurrent, thereby achieving the purpose of sensing light. In addition, referring to FIG. 9 , a second aspect of the structure of the switching element 250 and the photo sensing element 260 of the photosensor 7 〇 0 of the second embodiment of the present invention is substantially the same as the switching element 250 of FIG. 4 . The structure of the light sensing element 260, but the opaque gate 361 of the light sensing element 260 is further provided with an opening 770 so that the external light can pass through the gate 361 after passing through the transparent substrate 2 1 . The upper opening 770 reaches the active layer 364 to generate a photocurrent, whereby 01291-TW/A07060-TW 10 200924176 achieves the purpose of sensing the light bath. _ This month's light sensor can use the existing liquid crystal display manufacturing technology to form gate lines, read lines and amorphous slab film transistors on large glass substrates' in thin film transistors and related components Designed to an appropriate size, the photosensor of the present invention can have a high degree of transparency, with some special applications 'for example, the light of the present invention can be achieved! The device is placed on the paper with the image or in front of the display, used to change the surrounding light, but does not affect the display of the image. In addition, the amorphous thin film electrothermal body of the photosensor of the present invention can be made of a transparent material by increasing the transparency of the amorphous magnet thin film electric sensor. & Stomach acetabulum Although the present invention has been described in the above-mentioned -^ 太太恭日日 / / ▲ 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实Various changes and modifications may be made without departing from the spirit and scope of the invention. The definition of the patent application scope attached to the patent is subject to change. The moon L
01291-TWIA07060-TW 200924176 【圖式簡單說明】 第1圖：為習知以CCD或CMOS元件製作成的大型光 感測器的示意圖。 第2圖：為本發明第一實施例之光感測器之上視圖。 第3圖：顯示本發明第一實施例之光感測器之光感測元 件與開關元件的結構的第一態樣。 第4圖：顯示本發明第一實施例之光感測器之光感測元 〇 件與開關元件的結構的第二態樣。 第5圖：顯示本發明第一實施例之光感測器之光感測元 件與開關元件的結構的第三態樣。 第6圖：顯示本發明第一實施例之光感測器之光感測元 件與開關元件的結構的第四態樣。 第7圖：為本發明第二實施例之光感測器之上視圖。 第8圖：顯示本發明第二實施例之光感測器之光感測元 〇 件與開關元件的結構的第一態樣。 第9圖：顯示本發明第二實施例之光感測器之光感測元 件與開關元^的結構的第二態樣。 01291-TW/A07060-TW 12 200924176 【主要元件符號說明】 110 基板 120 CCD/CMOS 元件 130 連接線 200 光感測器 210 基板 220 閘極線 230 讀取線 240 區域 250 開關元件 260 光感測元件 280 遮光層 351 閘極 352 源極 353 汲極 354 主動層 355 摻雜層 356 閘極絕緣層 357 保護層 361 閘極 362 源極 363 汲極 364 主動層 365 摻雜層 366 閘極絕緣層 700 光感測器 770 開口 01291-TW/A07060-TW 1301291-TWIA07060-TW 200924176 [Simplified Schematic] Fig. 1: Schematic diagram of a large-scale optical sensor made of CCD or CMOS components. Fig. 2 is a top plan view of a photosensor according to a first embodiment of the present invention. Fig. 3 is a view showing a first aspect of the structure of the light sensing element and the switching element of the photosensor of the first embodiment of the present invention. Fig. 4 is a view showing a second aspect of the structure of the light sensing element and the switching element of the photosensor of the first embodiment of the present invention. Fig. 5 is a view showing a third aspect of the structure of the light sensing element and the switching element of the photosensor of the first embodiment of the present invention. Fig. 6 is a view showing a fourth aspect of the structure of the light sensing element and the switching element of the photosensor of the first embodiment of the present invention. Figure 7 is a top plan view of a photo sensor of a second embodiment of the present invention. Fig. 8 is a view showing a first aspect of the structure of the light sensing element and the switching element of the photosensor of the second embodiment of the present invention. Fig. 9 is a view showing a second aspect of the structure of the light sensing element and the switching element of the photosensor of the second embodiment of the present invention. 01291-TW/A07060-TW 12 200924176 [Description of Main Components] 110 Substrate 120 CCD/CMOS Components 130 Connection Cable 200 Photosensor 210 Substrate 220 Gate Line 230 Reading Line 240 Area 250 Switching Element 260 Light Sensing Element 280 light shielding layer 351 gate 352 source 353 drain 354 active layer 355 doped layer 356 gate insulating layer 357 protective layer 361 gate 362 source 363 drain 364 active layer 365 doped layer 366 gate insulating layer 700 light Sensor 770 opening 01291-TW/A07060-TW 13