TW200923454A - Manufacturing method of optical polarization switch device and its product - Google Patents

Manufacturing method of optical polarization switch device and its product Download PDF

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Publication number
TW200923454A
TW200923454A TW96144783A TW96144783A TW200923454A TW 200923454 A TW200923454 A TW 200923454A TW 96144783 A TW96144783 A TW 96144783A TW 96144783 A TW96144783 A TW 96144783A TW 200923454 A TW200923454 A TW 200923454A
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Taiwan
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layer
electrode
switching element
waveguide
zinc
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TW96144783A
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Chinese (zh)
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Rui-Qing Tu
xuan-xian Li
Hao-Yang Hong
Qin-Yao Yang
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Univ Southern Taiwan
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Priority to TW96144783A priority Critical patent/TW200923454A/en
Publication of TW200923454A publication Critical patent/TW200923454A/en

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  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

The present invention provides a manufacturing method of an optical polarization switch device, which includes sequentially forming a nickel layer of 5-10 nm and a zinc layer of 25-40 nm on a lithium niobate (LiNbO3) substrate with a top in x-cut direction; performing a thermal processing of 800-850 DEG C to diffuse nickel atoms and zinc atoms into the lithium niobate substrate for forming a waveguide channel capable of propagating light signals; and finally defining an electrode unit for providing a voltage to switch the light signal propagating mode, thereby manufacturing a device for use in the wavelength range of 400-800 nm for visible light. In the method of the present invention, zinc is attached by plating nickel, and nickel atoms and zinc atoms are diffused into the substrate at the same time during high-temperature thermal diffusion, so as to simultaneously form an optical polarization switch device with better anti-photorefractive effect, and provide more stable optical polarization sate switching feature and enough high-output light power.

Description

200923454 九、發明說明: 【發明所屬之技術領域】 本發明是有關於一種可應用在光學量測及光通訊系統 中,提供光極化切換元件的製造方法及其製品,特別是指 一種用於切換入射光極化狀態的光極化切換元件的製造^ 法及其製品。 【先前技術】 隨著光學感測技術在生醫及環境檢測的應用,利用電 光晶體調制光訊號相位、頻率及極化等技術,已廣泛地被 應用在量測精度的提升,及快速反應與檢測的需求。其中 ,利用波導作為光訊號調制的光極化切換元件,具有較低 的操作電壓,且體積小、質量輕,並易於與周邊電路及元 件整合封裝的優點,更是學界積極研究的範疇之一。 此外在光通訊系統中,光極化狀態之控制對於同調接 收系統及光放大系統均為重要之模組元件之一。 參閱圖1 ’目前用於調變入射光的極化狀態的光極化切 換元件1的結構,大致已揭示在US4691984號專利案中, 該光極化切換元件i包含一鈮酸鋰(LiNb03)基材11、一 波導通道12 ’及一電極單元13。 該銳酸經基材11具有一頂面111。 同時參閱圖2、圖3,該波導通道12自該頂面111向下 延伸且兩端分別連接該鈮酸鋰基材11的兩側面112。 該電極單元13形成在該頂面U1上,具有一層形成在 該頂面111上的絕緣層131、一形成在該絕緣層131上並對 200923454 應位於該波導通道12上方的第 J弟一電極132 (控制電極, control electrode ),及形成在該絕 乂七緣層131上且分別位於該 第一電極132相反兩側的-第二電極叫相調變電極, phase tuning electrode )與一笛-_ 弟二電極134 (接地電極, grounded electrode ) ° 蓉於鈮酸链基材η晶體結構的特殊性,—般,該基材 11頂面111是沿負X-切(x_cut)方向、波導通道12沿2方 向形成的,如此以電極單元12調變電壓時,經由電光晶體 所具有之電光調變特性,當接地電極134接地時,同時配 合相調變電極⑴提供之適當相位匹配電壓,及控制電極 132所提供之最佳極化耦合電壓,如此便能達成人射光訊號 在該波導通道12中沿z方向傳播時,由人射te_模態切換 成ΤΜ-模態輸出或是由入射ΤΜ_模態切換成τε模態之最佳 輸出。 目前,此類光極化切換元件丨的波導通道12,多是以 US4691984號專利案中揭示的技術形成—先在該銳酸鐘基 材11頂面111形成一薄的鈦(丁丨)層,經過高溫(1 〇2〇。匸) 、長時間(6小時)的熱處理,而使鈦原子擴散進入該鈮酸 鋰基材11後定義出該可傳播光訊號的波導通道12。 此種鈮酸鋰鈦光極化切換元件的問題在於,當入射光 為可見光波長範圍時(4〇〇nm〜800nm ),在高功率光訊號入 射時較谷易產生光折效應(Ph〇torefractive Effect ),因此對 632nm波長的光極化轉換器而言,不但無法長時間穩定操 作,同時電光調變輸出也較不穩定;除此之外,鈦的擴散 200923454 所以在量產上需耗費 需要較長的時間與較高的溫度進行 較多時間,以致製程成本居高不下。 【發明内容】 因此,本發明之目的,即. p在提供一種製程成本較低且 在可見光波長範圍,具有穩定電# __ 又电先調變輸出的光極化切換 元件的製造方法及其製品。 於是,本發明為-種光極化切換元件的製造方法,用 於製作適用在可見光傳播波長範圍(彻細〜綱細)提供 穩定的電光操作特性的光極化切換元件。 。玄製&方法疋先準備—具有負χ_切方向的頂面的鈮酸 鐘基材,接著在該基材頂面定義—波導圖樣。 然後先自該頂面向上形成—層厚度在5〜i()nm的鎖層, 再自該鎳層向上形成一層厚度在25〜4〇1^的辞層。 接著移除部分區域的錦層與鋅層,讓留下的錄層與辞 層的形狀對應於該波導圖樣。 隨之以8GG~85GC熱處理ι·5〜3小時,使錄原子與鋅原 子擴散進入該鈮酸經基材中,便可形成一可傳播光訊號的 波導通道。 最後在該基材頂面上,定義出一可提供電壓,以調變 光訊號在該波導通道中沿2方向傳播的模態的電極單元即 元成或光訊號極化切換元件的製備。 本發明相較於現有鈦擴散製程元件的功效在於:以鋅 原子擴散形成的光極化切換元件,操作在可見光波段時, 可具有較佳的操作穩定性’同時預期在近紅外線波長範圍 200923454 也可提供更高功率輸出表現,但是因辞金屬在鑛膜時不易 均勻附著在鈮酸鋰基材上進而形成波導通道,所以本發明 利用可以附著在鈮酸鋰基板頂面的鎳,先在基材上形成鎳 層,再使鋅附著在鎳上,而克服辞不易附著在鈮酸鋰基材 上之製程限制’以較低的製程成本製作出操作穩定性佳以 及咼功率輸出表現的光極化切換元件。 【實施方式】 有關本發明之前述及其他技術内容、特點與功效,在 以下配合參考圖式之一個較佳實施例的詳細說明中將可 清楚的呈現。 在本發明被詳細描述之前,要注意的是,在以下的說 明内容中,類似的元件是以相同的編號來表示。 參閱圖4,本發明光極化切換元件的製造方法的一較佳 實施例,用於製作出結構類似於圖丨所示的光極化切換元 件1。 ' 先參閱圖1、圖2與圖3,以本發明的製造方法的較佳 實細*例所製作的光極化切換元件1,在結構與操作原理上與 目前的(US4691984號專利案)的光極化切換元件i並無 差異,在此不再重複贅述,特別的是,以本發明的製造方 法製作的光極化切換元件1的波導通道12,是由鎳原子與 争原子擴散進入s亥铌酸裡基材丨丨中形成的(此部份細節靖 容後再敘),而對於可見光波長範圍的光訊號的傳播,不但 具有長時間穩定操作之優點,同時在近紅外線波長範圍以 及在強光入射時’都具有較高的穩定光功率輸出。 200923454 上述的光訊號極化切換元件!在經過以下的 的詳細說明後,當可更加清楚的明白。 / 一參閱圖4,本發明的製造方法是先進行步驟η,準備 -塊具有負X-切方向的頂面_軸基材n, ill是X切方向也可以適用, 面 蜒馑疋先矾唬傳遞的方向 產兵而已。 行步驟42,在基#11頂面1^義出—波導圖 枚,在此疋利用技術已臻成熟的半導體黃光製程實施。 接著進行步驟43、44,利用鍍膜製程自該基材u頂面 111向上形成—層厚度在5〜1〇nm的錄層後繼續自該錄層 向上化成層厚度在25〜40nm辞層。 再進行步鄉45,移除部分的鎳層與辞層,留下形狀對 應於該波導圖樣的鋅層與鎖層;在此是利用半導體掀離製 程實施。 之後進行步驟46’以_〜8贼熱處理15~3小時在基 材U上形成有錦層與鋅層的半成品,使錄原子與辞原子二 散進入該M鐘基材11中,即形成該可傳播光訊號的波導 通道12。 a最後進行步驟47,同樣制半導體製程在該基材UJl 定義出該可提供電麼的電極單元13—此過程是先以二氧化 石夕在該基材11頂面上形成該層絕緣層131,之後,再以銘 為主要構成材料定義出第—、二、三電極132、i33、134, 而完成光訊號極化切換元件i的製作;當然,絕緣層的使 用材料並不僅限於二氧切,其他例如氮切、氧化组, 200923454 材料均可以適用,另外,電極的材料當然不 他例如鎳、鈦4、銅等金屬或其合金, δ至疋包含銦、錫成分的 、透月導電氧化物等,也都是可以 適用的材料,由於材料 ,,., 的用並非本發明的創作重點所在 ,故在此不再多加舉例說明。 目則已知’直接以鋅鍍膜的方式,是較困難地附在 =向的銳酸鐘基材頂面上,進而擴散形成波導通道但200923454 IX. Description of the Invention: [Technical Field] The present invention relates to a manufacturing method and an article thereof, which can be applied to an optical measuring and optical communication system, and an optical polarization switching element, and particularly to a method A method of manufacturing an optical polarization switching element that switches a polarization state of incident light and a product thereof. [Prior Art] With the application of optical sensing technology in biomedical and environmental detection, the use of electro-optical crystals to modulate the phase, frequency and polarization of optical signals has been widely used in the measurement accuracy, and rapid response and The need for testing. Among them, the use of a waveguide as an optically polarized switching element for optical signal modulation has a low operating voltage, is small in size, light in weight, and is easy to integrate with peripheral circuits and components, and is one of the areas actively studied by the academic community. . In addition, in the optical communication system, the control of the optical polarization state is one of the important module components for the coherent receiving system and the optical amplifying system. Referring to Fig. 1 'the structure of an optically polarized switching element 1 for modulating the polarization state of incident light, which has been disclosed in U.S. Patent No. 4,694,1984, the optically polarized switching element i comprises lithium niobate (LiNb03). A substrate 11, a waveguide channel 12' and an electrode unit 13. The sharp acid has a top surface 111 through the substrate 11. Referring to FIG. 2 and FIG. 3, the waveguide channel 12 extends downward from the top surface 111 and is connected to both sides 112 of the lithium niobate substrate 11 at both ends. The electrode unit 13 is formed on the top surface U1, and has an insulating layer 131 formed on the top surface 111, and a J-th electrode formed on the insulating layer 131 and the 200923454 should be located above the waveguide channel 12. 132 (control electrode), and a second electrode formed on the opposite side edge layer 131 and located on opposite sides of the first electrode 132, respectively, a phase modulation electrode and a flute- _ 弟二电极134 (grounded electrode) ° The specificity of the crystal structure of the 铌 铌 chain substrate η, generally, the top surface 111 of the substrate 11 is along the negative X-cut (x_cut) direction, the waveguide channel 12 is formed along the two directions, when the voltage is modulated by the electrode unit 12, through the electro-optical modulation characteristic of the electro-optical crystal, when the ground electrode 134 is grounded, the appropriate phase matching voltage provided by the phase modulation electrode (1) is simultaneously matched, and The optimal polarization coupling voltage provided by the control electrode 132 is such that when the human light signal propagates in the z direction in the waveguide channel 12, the human te_mode is switched to the ΤΜ-modal output or is incident. ΤΜ_模Switching to the optimal output mode τε. At present, the waveguide channel 12 of such a photo-polarization switching element is formed by the technique disclosed in the patent of US Pat. No. 4691984. First, a thin layer of titanium (butadiene) is formed on the top surface 111 of the sharp acid substrate 11. The high temperature (1 〇 2 〇. 匸), long time (6 hours) heat treatment, and diffusion of titanium atoms into the lithium niobate substrate 11 defines the waveguide channel 12 that can propagate the optical signal. The problem of such a lithium niobate photopolarization switching element is that when the incident light is in the visible wavelength range (4 〇〇 nm to 800 nm), the photo-folding effect is more likely to occur when the high-power optical signal is incident (Ph〇torefractive). Effect), therefore, for the 632nm wavelength optical polarization converter, not only can not operate stably for a long time, and the electro-optical modulation output is also unstable; in addition, the diffusion of titanium 200923454 is costly in mass production. Longer time and higher temperature for more time, so that the cost of the process remains high. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a method for fabricating an optically polarized switching element having a low process cost and a stable wavelength in the visible wavelength range, and having a stable electrical output and a modulated output. . Accordingly, the present invention is a method of fabricating a photopolarization switching element for fabricating a photopolarization switching element which is suitable for providing stable electro-optic operation characteristics in a visible light transmission wavelength range (total to fine). . The tangent & method is first prepared - a tantalum clock substrate having a top surface with a negative χ tangential direction, followed by a waveguide pattern defined on the top surface of the substrate. Then, a lock layer having a layer thickness of 5 to i () nm is formed from the top surface, and a layer of thickness of 25 to 4 〇 1 ^ is formed upward from the nickel layer. The layer and the zinc layer of the partial region are then removed, so that the shape of the recorded layer and the layer of the layer correspond to the waveguide pattern. Then, it is heat-treated by 8GG~85GC for 5~3 hours, and the recorded atoms and zinc atoms are diffused into the substrate through the substrate to form a waveguide channel capable of transmitting optical signals. Finally, on the top surface of the substrate, a preparation of a modulo electrode unit, that is, a polarization-switching element, which can supply a voltage to modulate the optical signal in the waveguide in the two directions, is defined. Compared with the prior art titanium diffusion process components, the invention has the advantages that the optical polarization switching element formed by diffusion of zinc atoms can have better operational stability when operating in the visible light band, and is also expected to be in the near-infrared wavelength range 200923454. It can provide higher power output performance, but it is difficult to uniformly adhere to the lithium niobate substrate to form a waveguide channel when the metal is in the mineral film. Therefore, the present invention utilizes nickel which can be attached to the top surface of the lithium niobate substrate, first in the base. The nickel layer is formed on the material, and the zinc is attached to the nickel, thereby overcoming the process limitation of not easily adhering to the lithium niobate substrate. 'The light stability is good at the lower process cost and the light output performance is good. Switching components. The above and other technical contents, features, and advantages of the present invention will be apparent from the following detailed description of the preferred embodiments. Before the present invention is described in detail, it is noted that in the following description, similar elements are denoted by the same reference numerals. Referring to Fig. 4, a preferred embodiment of the method of fabricating the optically polarized switching element of the present invention is used to fabricate a photopolarization switching element 1 having a structure similar to that shown in Fig. 4. Referring to Figures 1, 2 and 3, the optical polarization switching element 1 produced by the preferred embodiment of the manufacturing method of the present invention is in the structure and operation principle and the present (US Patent No. 4691984) The optical polarization switching element i is not different, and the details are not repeated here. In particular, the waveguide 12 of the optical polarization switching element 1 fabricated by the manufacturing method of the present invention is diffused by nickel atoms and discrete atoms. It is formed in the substrate of s海铌酸 (this part of the details is later described), and the propagation of optical signals in the visible wavelength range not only has the advantage of long-term stable operation, but also in the near-infrared wavelength range. And it has a high stable optical power output when it is incident on strong light. 200923454 The above optical polarization switching components! After the following detailed explanation, it can be more clearly understood. Referring to FIG. 4, the manufacturing method of the present invention first performs step η, and the preparation block has a negative X-cut direction top surface _-axis substrate n, and ill is X-cut direction. The direction of transmission is only for the soldiers. Step 42 is performed on the top surface of the base #11. The waveguide pattern is used in the semiconductor yellow light process. Next, steps 43 and 44 are performed, and a plating process is performed from the top surface 111 of the substrate u to a recording layer having a layer thickness of 5 to 1 〇 nm, and then proceeds from the recording layer to a layer thickness of 25 to 40 nm. Further, step 45 is performed to remove a portion of the nickel layer and the layer, leaving a zinc layer and a lock layer having a shape corresponding to the waveguide pattern; here, it is implemented by a semiconductor stripping process. Then, in step 46', a semi-finished product having a layer of gold and a layer of zinc is formed on the substrate U by heat treatment for ~8 thieves for 15 to 3 hours, so that the recorded atoms and the atoms are scattered into the substrate 11 of the M clock, thereby forming the spread. The waveguide channel 12 of the optical signal. a. Finally, step 47 is performed, and the semiconductor process is defined in the substrate UJ1 to define the electrode unit 13 capable of supplying electricity. The process is to form the insulating layer 131 on the top surface of the substrate 11 by using the oxidized stone first. Then, the first, second, and third electrodes 132, i33, and 134 are defined by Ming as the main constituent material, and the fabrication of the optical polarization switching element i is completed; of course, the material used for the insulating layer is not limited to the dioxotomy. Other materials such as nitrogen cutting and oxidation, 200923454 can be applied. In addition, the material of the electrode is of course not metal such as nickel, titanium 4, copper or its alloy, and δ to yttrium contains indium and tin components. Materials, etc., are also applicable materials. Since the use of materials, etc. is not the focus of the present invention, it will not be exemplified here. It is known that the method of direct zinc coating is more difficult to attach to the top surface of the sharp acid clock substrate on the = direction, and then diffuse to form the waveguide channel.

明的製造方法先以鎳附著在負X-切方向的鈮酸鍾基 材頂面,再以鋅附菩為禮 者在錄上進而同時擴散形成波導通道 丨克服了上述的問題’製得由辞原子與鎳原子擴散形成 的波導通道n本發明的製造方法相較於目前以欽原 :擴散形成波導通道的製程,不但大幅降低製程溫度,同 時也大幅縮短製程時間,而有效縮減製作成本。 參閱圖5,由本圖的光訊號光場輸出可驗證以上述本發 明的製造方法的較佳實施例所製作的光極化切換元件傳輸 波長632mn的光訊號時,無論是初始輸入TE偏振模態( TE-mode ’(a))切換成 tm 偏振模態(TM_m〇de,(b)), 或初始輸入TM偏振模態(TE_mode,(c))切換成TE偏 振杈態(TE-mode,(d)),偏振模態表現均完整而均勻,表 不兀件操作時具有穩定的輸出表現與光輸出功率、電光操 作特性良好。 參閲圖6,圖6是以上述本發明的製造方法的較佳實施 例所製作的光極化切換元件,當控制電極以〗〇赫茲頻率三 角波電壓訊號輸入時,不同輸入相調變電壓時的光極化切 10 200923454 換輸出表現,在初始輸 —r 、 偏振拉怨、不同切換電壓睹 曰a)部分是V=0伏特,⑴部分是v= 是V=12伏拉,3»。、 特(c)部分 寺,及(d)部分是v= 16伏特,复中 電壓V-1 9β ”中,®相調變 '伙特時,此時為最佳的相位匹配電壓, 電壓& X 7 311•而在控制 別為V=6伏特及ν=_5伏特時, it 99 m 共取回轉換效益可 .c,因此,可以驗證元件的電性表現穩定、良好。 度:::爲了進一步了解元件在長時間操作下的穩定 用較尚功率的入射光,當波導輸出端以4〇倍顯微物 2焦量得的輸出光功率為25毫瓦時,在如前述之量測電 别入條件下,其光極化換轉換效益隨量測時間的變化如 ,7 ’圖7中(a)部分(量測時間2〇分鐘)、⑴部分( 量:树間40分鐘)、(c)部分(量測時間5〇分鐘),及刀(d )、部分(量測時間60分鐘)。雖然在相位匹配電壓為v=12 1犬特時,控制電壓V=6伏特及v=_5伏特時,均在量測初 期具有良好的轉換效益。隨著時間增加,控制電壓伏 寺处的轉換效益,並未改變,但相對的控制電壓伏特 处的轉換效▲,卻逐漸降低,這是因為控制電壓V=6伏特 時,會在絕緣層131下方及波導通道12上方產生因電場感 應之負電荷,此時,因光折效應所產生的負電荷光激發載 子’會同時受到原本之相調變電場之影響,而造成在空間 中非均勻之分佈,而由此光激發載子所造成的電壓會抵消 原本外加之相調變電壓值,因而隨著入射光照射時間增至 60分鐘時’其轉換效益會由原先的99.5 %逐漸降低至8丨2% ’因為此時的等效施加電壓已偏離初始之相位匹配電壓( 11 200923454 伏特)’而此現象也意味著光激發載子的數量會隨照 拖曰加而增加。此外,當照射時間達50分鐘時,其轉 屏*降為83 7%,而此值也接近在圖6⑻中,當相調變電 ^ V-8伏特時的轉換效益,很顯㈣此光激載子會造成電 •降達4伏特,迫使原來的相調變電壓偏離最佳的相位匹 配=壓。然而在控制電壓V=-5伏特時,在絕緣層下方及光 方由電場感應之正電荷會侷限大部份光激發之負 電荷,使得其等效相調變電壓會維持在原本相位匹配電壓 之條件,因此其轉換效益可以維持穩定。 爲了比#χ本發明所提的鋅/鎳擴散所成的波導通道與傳 先鈦擴放所成的波導通道的光傳輸穩定度,利用—寬度為4 。35nm厚度及相同長度為22mm長的鈦金屬條,在 1〇〇〇c下熱擴散4小時,可以製成ΤΕ及tm同時導單模態 之鈦波導itit,作為在光功率變動(〃 %)之比較,*光功率 變動之定義是,在連續照射6G分鐘的情形下,其最大與最 低力率輸出差值與平均值的比值,參閱圖8,圖^是輸出端 以40倍顯微物鏡聚焦量得的輸出光功率為⑽毫瓦情形下 ^功率變動的比較結果,發現對本發明辞/錄擴散所成的波 V通道而έ ’纟ΤΕ & ΤΜ入射極化下所量得結果分別為 7.62%及7.76%。相對的,鈦擴散所成的波導通道其π及 TM入射極化下所量得結果,分別為26 59%及口 ,此 結果顯示本發明的光極化切換元件具有較佳的光功率輸出 穩定性,因此’相較於傳統的光極化切換元件本發明所 提之鋅/鎳擴散光極化切換器將會有較佳的輸出特性,尤其 12 200923454 疋在可見光( 400nm~800nm)操作波段。 综上所述’本發明主要是先以可以附著負χ切方向的 鈮酸鋰基材頂面的鎳,在基材上附著形成一層可以附著辞 的鎳層後’再於鎳層上穩定附著辞層,進而以較低的熱處 理溫度與較短的熱處理時間讓鎳與鋅擴散進入鈮酸鋰基材 中製作得到由錄原子與鋅原子形成波導通道的光極化切換 7C件,不但克服目前因為鋅無法附著在鈮酸鋰基材上,而 無法製得由辞原子擴散形成波導通道的光訊號極化切換元 件的問題,也同時大幅降低製程成本。且,這樣的製程也 極具有應用在製作極化控制元件或是擾動元件上。 此外,根據量測結果得知,本發明的光訊號極化切換 元件在可見光波長範圍具有更穩定的長時間輸出表現與光 輸出功率,且電光操作特性良好;另外,由於本發明的元 件在可見光波長範圍的電光表現良好,在光通訊的光訊號 波長範圍132〇nm~155〇nm時,也可應用作為接收端同調訊 號解析,及降低在長距離光纖放大系統中之極化相依損耗 對接收訊號訊雜比的影響,確實達到本發明的創作目的。 惟以上所述者,僅為本發明之較佳實施例而已,當不 :以此限定本發明實施之範圍,即大凡依本發明申請專利 範圍及發明說明内容所作之簡單的等效變化與㈣,皆仍 屬本發明專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一立體圖,說明一光極化切換元件; 圖2是一剖視圖,輔助說明圖丨的光極化切換元件; 13 200923454 圖3是一剖視圖,輔助說明圖1的光極化切換元件; 圖4是一流程圖,說明本發明光極化切換元件的製造 方法的一較佳實施例; 圖5是一光極化切換光場輸出圖,說明以圖4的製作 方法製出的光極化切換元件,當輪入丁£(或TM)偏振模態時 ,在適當電壓下其輸出之對應切換TM(或TE)偏振模態^ 圖6疋一光極化轉換輸出圖,說明以圖4的製作方法 製出的光極化切換元件,在輸入為TM模態時,其切換特性 隨控制輸入電壓與相調變電壓變化之關係圖; 圖7是一光極化轉換輸出圖,說明以圖4的製作方法 製出的光極化切換元件,在長時間操作下之光極化轉換輸 出穩定度之表現;及 ' 圖8是一光功率輸出圖,說明以圖4的製作方法製出 的光極化切換元件與習知的光極化切換元件的波導通:, 長時間輸出光功率穩定度比較。 14 200923454 【主要元件符號說明】 1 光極化切換元件 134 第三電極 11 鈮酸鋰基材 41 步驟 111 頂面 42 步驟 112 側面 43 步驟 12 波導通道 44 步驟 13 電極手元 45 步驟 131 絕緣層 46 步驟 132 第一電極 47 步驟 133 第二電極 15Ming's manufacturing method first adheres to the top surface of the bismuth acid clock substrate with nickel in the negative X-cut direction, and then uses zinc to attach to the philosopher to record and simultaneously diffuse to form a waveguide channel. The above problem is overcome. The waveguide channel formed by diffusion of nickel atoms is a manufacturing process of the present invention. Compared with the current process of forming a waveguide channel by diffusion, the process temperature is not only greatly reduced, but also the process time is greatly shortened, and the manufacturing cost is effectively reduced. Referring to FIG. 5, the optical signal field output of the present embodiment can verify that the optical polarization switching element fabricated by the preferred embodiment of the manufacturing method of the present invention transmits an optical signal having a wavelength of 632 nm, regardless of the initial input TE polarization mode. (TE-mode '(a)) switches to tm polarization mode (TM_m〇de, (b)), or initial input TM polarization mode (TE_mode, (c)) switches to TE polarization state (TE-mode, (d)), the polarization mode performance is complete and uniform, and it has stable output performance, good light output power and electro-optic operation characteristics when the device is not operated. Referring to FIG. 6, FIG. 6 is a photo-polarization switching element produced by the above-described preferred embodiment of the manufacturing method of the present invention. When the control electrode is input with a triangular wave voltage signal of a 〇Hz frequency, when the input phase is modulated with a different voltage. The optical polarization cut 10 200923454 exchange output performance, in the initial transmission - r, polarization, different switching voltage 睹曰 a) part is V = 0 volts, (1) part is v = is V = 12 volts, 3». Part (c) part of the temple, and part (d) is v = 16 volts, in the complex medium voltage V-1 9β", the phase of the phase modulation is the best phase matching voltage, voltage & X 7 311• When the control is V=6 volts and ν=_5 volts, it 99 m can be used to retrieve the conversion benefit. c, therefore, it can be verified that the electrical performance of the component is stable and good. Degree::: In order to further understand the stability of the component under long-term operation with more power of incident light, when the output of the waveguide is 4 millimeters of the output of the microscope, the output optical power is 25 milliwatts, as measured in the foregoing. Under the condition of electric input, the change of the optical polarization conversion conversion with the measurement time is as follows: 7 ' part (a) in Figure 7 (measurement time 2 〇 minutes), (1) part (quantity: 40 minutes between trees), Part (c) (measurement time 5 〇 minutes), and knife (d), part (measurement time 60 minutes). Although the phase matching voltage is v=12 1 dog, the control voltage V=6 volts and v At =_5 volts, both have good conversion benefits at the beginning of the measurement. As time increases, the conversion efficiency of the control voltage at the temple has not changed. The conversion efficiency of the relative control voltage volts is gradually reduced. This is because when the control voltage V=6 volts, a negative electric charge induced by the electric field is generated under the insulating layer 131 and above the waveguide channel 12, at this time, due to light The negative charge photoexcited carrier generated by the folding effect will be affected by the original phase-modulated electric field at the same time, resulting in a non-uniform distribution in space, and the voltage caused by the photo-excited carrier will offset the original addition. The phase modulation voltage value, so as the incident light irradiation time increases to 60 minutes, the conversion efficiency will gradually decrease from the original 99.5 % to 8丨2%' because the equivalent applied voltage at this time has deviated from the initial phase. Matching voltage (11 200923454 volts) and this phenomenon also means that the number of photo-excited carriers will increase with the increase of the drag. In addition, when the illumination time reaches 50 minutes, the screen is reduced to 83 7%. This value is also close to that in Figure 6(8). When the phase shift is changed to ^V-8 volts, the conversion benefit is very good. (4) The light-activated carrier will cause the electricity to drop to 4 volts, forcing the original phase-modulated voltage to deviate the most. Good phase matching = pressure. However, when the control voltage is V=-5 volts, the positive charge induced by the electric field under the insulating layer and the light side will limit the negative charge of most of the light, so that the equivalent phase modulation voltage will be maintained at the original phase matching voltage. The condition, therefore, the conversion benefit can be maintained stable. For the optical transmission stability of the waveguide channel formed by the zinc/nickel diffusion and the diffusion of the first titanium, the width is 4. A 35mm-thick titanium strip with a length of 22mm and a thermal diffusion at 1〇〇〇c for 4 hours can be used to form a single-mode titanium waveguide itit with ΤΕ and tm as a variation in optical power. Comparison of %), *The definition of optical power variation is the ratio of the maximum and minimum force rate output difference to the average value in the case of continuous illumination for 6G minutes. See Figure 8 for the output. The output optical power obtained by the focusing of the micro objective lens is a comparison result of the power variation in the case of (10) milliwatts, and it is found that the wave V channel formed by the diffusion/recording of the present invention is measured by έ '纟ΤΕ & The results were 7.62% and 7.76% respectively.In contrast, the waveguide channel formed by titanium diffusion has a result of π and TM incident polarization, respectively, being 26 59% and the mouth, and the result shows that the optical polarization switching element of the present invention has better optical power output stability. Sex, therefore, compared to the conventional optical polarization switching element, the zinc/nickel diffused optical polarization switch proposed by the present invention will have better output characteristics, especially 12 200923454 可见光 in the visible light (400 nm to 800 nm) operating band . In summary, the present invention mainly uses nickel on the top surface of a lithium niobate substrate to which a negative tantalum direction can be attached, and adheres to a nickel layer which can adhere to the substrate, and then stably adheres to the nickel layer. The layer of transcription, and then the diffusion of nickel and zinc into the lithium niobate substrate at a lower heat treatment temperature and a shorter heat treatment time to produce a photopolarization switching 7C device that forms a waveguide channel from the recorded atom and the zinc atom, not only overcomes the current Since zinc cannot adhere to a lithium niobate substrate, the problem of an optical polarization switching element that forms a waveguide channel by diffusion of atoms can not be obtained, and the process cost is also greatly reduced. Moreover, such a process is also extremely useful in the fabrication of polarization control elements or disturbance elements. In addition, according to the measurement results, the optical polarization switching element of the present invention has a more stable long-term output performance and optical output power in the visible light wavelength range, and the electro-optic operation characteristics are good; in addition, since the element of the present invention is in visible light The electro-optic performance in the wavelength range is good. When the optical signal wavelength range of the optical communication is 132〇nm~155〇nm, it can also be applied as the receiving end homology signal analysis, and reduce the polarization dependent loss in the long-distance optical fiber amplification system. The influence of the signal-to-noise ratio does achieve the creative purpose of the present invention. However, the above is only the preferred embodiment of the present invention, and does not: limit the scope of the practice of the present invention, that is, the simple equivalent change made according to the scope of the present invention and the description of the invention and (4) All remain within the scope of the invention patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view showing a light polarization switching element; FIG. 2 is a cross-sectional view for explaining an optical polarization switching element of the figure; 13 200923454 FIG. 3 is a cross-sectional view for assistance in explaining FIG. FIG. 4 is a flow chart illustrating a preferred embodiment of a method for fabricating an optically polarized switching element of the present invention; FIG. 5 is an output diagram of an optical polarization switching light field, illustrating the fabrication of FIG. The optical polarization switching element produced by the method converts the output of the corresponding TM (or TE) polarization mode at an appropriate voltage when the wheel is turned into a (or TM) polarization mode. The output diagram illustrates the relationship between the switching characteristics of the optical polarization switching element produced by the manufacturing method of FIG. 4 and the change of the control input voltage and the phase modulation voltage when the input is in the TM mode; FIG. 7 is an optical pole. Conversion output diagram, illustrating the performance of the optical polarization switching component produced by the manufacturing method of FIG. 4, and the polarization stability of the optical polarization conversion under long-term operation; and FIG. 8 is an optical power output diagram illustrating Optical polarization switching element produced by the manufacturing method of FIG. And conventional waveguide through the polarization switching optical elements: the optical output power stability more time. 14 200923454 [Description of main component symbols] 1 Photopolarization switching element 134 Third electrode 11 Lithium niobate substrate 41 Step 111 Top surface 42 Step 112 Side 43 Step 12 Waveguide channel 44 Step 13 Electrode hand 45 Step 131 Insulation layer 46 Step 132 first electrode 47 step 133 second electrode 15

Claims (1)

200923454 申e月專利範圍 一種 (a) (b) (c) (d) (f) (g) 光極化切換元件的製造方法,包含: 準備一具有x-切方向的頂面的銳酸鋰基材; 在該鈮酸鋰基材頂面定義出一波導圓樣. 自該鈮酸鋰基材頂面向上形成—層厚度在Η — 的鎳層; 自該鎳層向上形成一層厚度在 予又隹25〜40nm的鋅層; 移除部分區域的錦層盘鋒層 “ S 胃下形狀對應於該 波導圖樣的錦層與鋅層; 以800〜850。(:熱處理1 5〜3小眸兮本 J時5亥步驟(e)製得 的半成品,使鎳原子與鋅 f原于擴散進入該鈮酸鋰 基材中形成-可傳播光訊號的波導通道; 在該基材頂面上定義一 心我供電壓以調變光訊號 在δ亥波導通道中a你 ° 方向傳播的模態的電極單元 〇 2 ·依據申請專利蘇楚 項所述之光極化切換元件的製造 成…中,該步驟⑴定義的電極單元包括-層形 於m面上的絕緣層、—形成在該絕緣層上並對應位 八7 弟電極,及形成在該絕緣層上且 为別位於該第一電極沿 y方向相反兩側的一第二電極與 一第三電極。 、 3.依據申請專利範圍第 牙2項所述之光極化切換元件的製造 万法,其中,該留 沾咖电人 以 之對應於該波導圖案的鎳層與鋅層 的見度介於2# m 〇 且該第一電極的寬度比形成的 16 200923454 波導寬0 β m〜4 β m,第—電極愈兮贷_ _ 一 β亥第一、二電極的間距 在 2 # m~20 # m。 4. 依據中請專利範圍第3項所述之光極化切換元件的製造 方法,其中’該絕緣層是選自二氧化矽、氮化矽、氧化 鈕,或高分子絕緣材為材料構成且厚度在5〇〇〜4〇〇nm之 間。 5. —種光極化切換元件,包含: 一鈮酸鋰基材,具有一 ;^_切方向的頂面; 一波導通道,自該頂面向下沿z方向延伸,且兩端 分別連接該鈮酸鋰基材的兩側面,該波導通道是先在該 頂面形成一層厚度在5~l〇nm的鎳層,再在鎳層上形成 一層厚度在25〜40nm的辞層後,以8〇〇〜85(Γ(:熱處理 1.5~3小時,使鎳原子與鋅原子擴散進入該鈮酸鋰基材 中形成光波導;及 一電極單元’形成在該頂面上,當經由該電極單元 提供電壓時,光訊號在該波導通道中沿z方向傳播的模 態被調變。 6. 依據申請專利範圍第5項所述之光極化切換元件,其中 ,該電極單元具有一層形成在該頂面上的絕緣層、—形 成在該絕緣層上並對應位於該波導通道上方的第一電極 ’及形成在該絕緣層上且分別位於該第一電極沿^方向 相反兩側的一第二電極與一第三電極。 7_依據申請專利範圍第6項所述之光極化切換元件,其中 ,該鎳層與鋅層的寬度介於2" m〜8 " m,且該第—電極 17 200923454 的寬度比該波導通道的寬度大〇// m〜4 // m,第一電極與 該第二、三電極的間距在2 // m〜20 # m。 8.依據申請專利範圍第3項所述之光極化切換元件,其中 ,該絕緣層是以該絕緣層是選自二氧化矽、氮化矽、氧 化钽,或高分子絕緣材為材料構成,且厚度在 500~400nm 之間。 18200923454 The scope of the patent for the e-month is (a) (b) (c) (d) (f) (g) The manufacturing method of the optical polarization switching element, comprising: preparing a lithium niobate having a top surface in the x-cut direction a substrate; a waveguide circle is defined on the top surface of the lithium niobate substrate; a nickel layer having a thickness of Η is formed from the top surface of the lithium niobate substrate; and a thickness is formed from the nickel layer upward Further 隹 25~40nm zinc layer; remove part of the area of the layer of the layer of the layer "S stomach shape corresponds to the layer of the layer of the zinc layer and the zinc layer; to 800 ~ 850. (: heat treatment 1 5 ~ 3 small 眸The semi-finished product prepared by the step (e) of the present invention, the nickel atom and the zinc f are diffused into the lithium niobate substrate to form a waveguide channel capable of propagating the optical signal; defined on the top surface of the substrate One-piece I supply voltage to modulate the optical signal in the δHai waveguide channel, the modal electrode unit 〇2 in the direction of the 亥Hai waveguide. According to the manufacture of the optical polarization switching element described in the patent application Su Chu, The electrode unit defined in the step (1) includes an insulating layer layered on the m-plane, formed in the insulating layer a second electrode and a third electrode formed on the insulating layer and on the opposite sides of the first electrode in the y direction. 3. According to the scope of the patent application The method for manufacturing a photopolarization switching element according to the item 2, wherein the nickel layer and the zinc layer corresponding to the waveguide pattern have a visibility of 2#m 〇 and the first The width of the electrode is wider than the formed 16 200923454 waveguide by 0 β m~4 β m, and the distance between the first electrode and the second electrode is 2 # m~20 # m. The method for manufacturing a photopolarization switching element according to Item 3, wherein the insulating layer is selected from the group consisting of cerium oxide, cerium nitride, oxidized button, or polymer insulating material, and has a thickness of 5 〇〇. Between ~4〇〇nm. 5. A kind of photopolarization switching element, comprising: a lithium niobate substrate having a top surface of a tangential direction; a waveguide channel extending from the top to the bottom along the z direction Extending, and the two ends are respectively connected to the two sides of the lithium niobate substrate, the waveguide channel is first A nickel layer having a thickness of 5 to 10 nm is formed on the top surface, and then a layer of 25 to 40 nm thick is formed on the nickel layer, and 8 to 85 (Γ: heat treatment for 1.5 to 3 hours to make nickel) An atom and a zinc atom diffuse into the lithium niobate substrate to form an optical waveguide; and an electrode unit 'is formed on the top surface, and when a voltage is supplied via the electrode unit, the optical signal propagates in the z direction in the waveguide channel The optically polarized switching element according to claim 5, wherein the electrode unit has a layer of an insulating layer formed on the top surface, formed on the insulating layer and corresponding thereto a first electrode disposed above the waveguide and a second electrode and a third electrode formed on the insulating layer and respectively located on opposite sides of the first electrode. The photo-polarization switching element according to claim 6, wherein the width of the nickel layer and the zinc layer is between 2 " m~8 " m, and the width of the first electrode 17 200923454 is greater than The width of the waveguide channel is 〇//m~4 // m, and the distance between the first electrode and the second and third electrodes is 2 // m~20 # m. 8. The photopolarization switching element according to claim 3, wherein the insulating layer is made of a material selected from the group consisting of ceria, tantalum nitride, hafnium oxide, or polymer insulating material. And the thickness is between 500~400nm. 18
TW96144783A 2007-11-26 2007-11-26 Manufacturing method of optical polarization switch device and its product TW200923454A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103852916A (en) * 2012-11-30 2014-06-11 鸿富锦精密工业(深圳)有限公司 Electro-optical modulator
CN110133802A (en) * 2019-06-13 2019-08-16 天津领芯科技发展有限公司 A kind of novel lithium niobate optical waveguide wafer and preparation method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103852916A (en) * 2012-11-30 2014-06-11 鸿富锦精密工业(深圳)有限公司 Electro-optical modulator
CN110133802A (en) * 2019-06-13 2019-08-16 天津领芯科技发展有限公司 A kind of novel lithium niobate optical waveguide wafer and preparation method thereof

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