TW200923039A - Low-voiding die attach film, semiconductor package, and processes for making and using same - Google Patents

Low-voiding die attach film, semiconductor package, and processes for making and using same Download PDF

Info

Publication number
TW200923039A
TW200923039A TW097117985A TW97117985A TW200923039A TW 200923039 A TW200923039 A TW 200923039A TW 097117985 A TW097117985 A TW 097117985A TW 97117985 A TW97117985 A TW 97117985A TW 200923039 A TW200923039 A TW 200923039A
Authority
TW
Taiwan
Prior art keywords
group
film
composition
adhesive
curable resin
Prior art date
Application number
TW097117985A
Other languages
Chinese (zh)
Inventor
Hwail Jin
Original Assignee
Nat Starch Chem Invest
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Starch Chem Invest filed Critical Nat Starch Chem Invest
Publication of TW200923039A publication Critical patent/TW200923039A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C08G59/22—Di-epoxy compounds
    • C08G59/30—Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen
    • C08G59/306—Di-epoxy compounds containing atoms other than carbon, hydrogen, oxygen and nitrogen containing silicon
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2463/00—Presence of epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01005—Boron [B]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01015—Phosphorus [P]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01023—Vanadium [V]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01025—Manganese [Mn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01027—Cobalt [Co]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0104—Zirconium [Zr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0105—Tin [Sn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01056—Barium [Ba]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01074—Tungsten [W]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01087—Francium [Fr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/014—Solder alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

This invention is a low-voiding adhesive film prepared from a composition. The composition comprises a toughening polymer, a curable resin, a curing agent for the curable resin, a void reduction compound, and a curing agent for the void reduction compound. The void reduction compound has at least two Si-O moieties contiguous with each other and at least one reactive functionality. Additional embodiments of this invention are described, including a process for producing the low-voiding die attach film, a method for reducing voids in a semiconductor package using the film of this invention, and a semiconductor package assembled with the film of this invention.

Description

200923039 九、發明說明： 【發明所屬之技術領域】 [0001]本發明傳、有闕於 特性’同時保有流動及浸潤上其=常低孔洞之 些薄膜之方法，特別4」㈣月b，及有關用於製造這 以黏合晶片。特別疋4些薄膜可於半導體封裝中用 【先前技術】 膜常被用於將物件黏附至基底 於半導體封裝中被 f ，一般而言，這些薄膜為組成物 片至 體，而後予,χ B老化至心m 、破施加至—載 15 成薄膜的形態。此’或者將組成物乾燥 導體晶圓或晶片==施:至:物件 物件。於後續的操作步驟中，當其；：：：：件至另： 非常受控制的黏著劑流動時、人型、的、或 利，但不幸地，盆亦且;^/_ 類型的缚膜可為有 氣成水、、^/ 列缺點：自存在於基底的空 虱认'逐漸產生空氣或水汽的孔洞。 -的工 著劑固化時，或於其他的熱操作， 隨後心接合至—導線架基底時，這些孔洞 -種解救方法為::，題之 :有著其可對_與:=^ 日加龄狀分子量會導致薄職法具有足夠 20 200923039 的流動以浸潤其所施加的表面，而造成不理想的黏結， 因此需要一種黏合膜，其能給予良好的流動及浸潤，而 於固化及其他的熱操作，如：引線接合時，不會於接合 線中逐漸產生孔洞。 5 【發明内容】 發明概述 [0004] 本發明為一種低孔洞之黏合膜，製自一種、组成 物’其包括：一種增韌聚合物、一種可固化樹脂、—種 10 用於可固化樹脂之固化劑、一種具有至少二個彼此毗連 的矽-氧（Si-O)部份及至少一個反應性官能之孔洞減少化 合物’及一種用於孔洞減少化合物之固化劑。 [0005] 於另一實例中，本發明為一種用於製造低孔洞 黏合膜之方法，此膜之製造係藉：⑴提供一種組成物， 15 其包括：一種增韌聚合物、一種可固化樹脂、一種用於 可固化樹脂之固化劑、一種具有至少二個彼此毗連的矽_ 氧部份及至少一個反應性官能之孔洞減少化合物，及一 種用於孔洞減少化合物之固化劑；（ii)施加此組成物至— 載體；及（iii)B-階化此組成物，因而製得一種黏合膜。 20 於另一貫例中，本發明為一種用於減少已固化 黏合膜中孔洞之方法，特別是，本發明為一種用於減少 半導體封裝中孔洞之方法。此方法包括：（i)提供一種組 成物，其包括：一種增韌聚合物、—種可固化樹脂、一 種用於可固化樹脂之固化劑、一種具有至少二個彼此毗 200923039 ί的::：二:至官能之孔洞減少化合 成物至-^ H⑼施加此組 娜上之斑人肢，（m)仏階化此組成物，因而製得一種於载 5 10 15 於後稱為加載體之黏合膜);㈣將加載體 1:二 &侧接觸至一物件或其基底；（V)移除载體藉 黏(vi)若黏著劑施加至物件之基底時，“ 晨黏著劑施加至物件時，將基底接觸，至 ^路’錢黏合膜安置㈣件與其基底之間， 中接受至少一項熱操作。於一特殊的實例 或/基底絲合叙黏合侧麻—半導體晶片 i&為達清晰之目的，於步驟（iv)中可將黏合膜施加 或其基底，因此在步驟（V)移除載體之後，若步驟 (:)中黏合㈣施加至物件，龍基底接觸絲合膜之暴 路侧，若被施加至基底，則將物件接觸至黏合膜之暴露 00=〜於另一貫例中，本發明為一種半導體封裝，藉 下法衣得.⑴提供一種組成物，其包括：一種增韌聚合 物、-種可m化樹脂、—種用於可固化樹脂之固化劑、 種，有至少二個彼此毗連的矽-氧部份及至少一個反 應性官能之孔洞減少化合物、及—種用於孔洞減少化合 物之固化劑；（11)將此組成物施加至一載體；（iii)B-階化 此組成物，因而製得一種加載體之黏合膜丨（iv)將加載體 黏合胰之黏合側與一切割帶接觸；（v)層壓此黏合膜至切 20 200923039 割帶，因此製得一成束晶圓背側層壓（BWBL)膜；（vi)移 除載體，將BWBL膜之暴露黏合側與半導體晶圓接觸， 並層壓此BWBL至半導體晶圓，而使黏合膜置於半導體 晶圓與切割帶之間；（v⑴切割此晶圓與黏合劑使成為個 別的具有黏著劑之半導體晶片；（viii)自切割帶取下具有 黏合膜之晶片；（ix)將具有黏合膜附著之晶片的黏合膜側 與基底接觸，致使黏合膜置於半導體晶片與基底之間， 以生成一組裝；及(x)使此組裝接受至少一項熱操作。 [0010] ‘‘烷基”一詞係指具有1至24個碳原子之分支或 未分支的飽和碳氫化合物基團，例如：曱基（“Me”）、乙 基（“Et”）、正丙基、異丙基、正丁基、異丁基、三級丁基、 辛基、癸基、及類同物。 [0011] 化合物、產物 '或組成物之’，有效數量，，一詞意 扣.足夠數量之化合物、產物、或組成物，藉以提供所 欲的結果。所需之確實數量依所使用之特殊化合物、產 物、或組成物、其使用模式、及類同者而異，因此並非 總是能指明確實數量，然而可藉此技藝中之一種常用技 術’僅使用一般的實驗即可決定有效數量。 [0012] 適合的”一詞意指：提供的化合物、產物、或 組成物可被用於所述之目的，藉以提供所述的結果，對 於所述目的之適合性，可藉此技藝中之一種常用技術， 僅使用一般的實驗即可予以決定。 [0013] ”層壓”(及其變化用語）一詞意指：將至少二種類 型的材料結合在一起，典型地使用熱與壓力。 200923039 二階化(B-Staging)，，(及其變化用語)一詞被用 或處理Γ種材料，致使：若材料被溶解 成此材料的部份固化成或不會造 此或者右材料為純質不含溶劑時， 態。若二::二也固化成一種發黏的或，更為硬化的狀 '1®的、1 :、—種可流動的黏著劑，B•階化會提供極 地固化，以致於使用黏著劑連接-物 可進行額外的固化，此減緩流動之達成 :槪劑、將樹脂或聚合物部份增強或固化、或為 一者0 I 固化劑—詞被用於意指：任何材料或併合材 /、可5丨發、蔓延、或促進組成物之固化者，及包括， <非限制f生.促進劑、催化劑、引發劑、與硬化劑。 15 [0016]載體”一詞被用於意指：任何材料，其可於製 造及f壓程序中對薄膜提供結構性支撐者，此載體可被 ，於薄臈結構中’並於薄膜之製造與使用過程中時仍為 薄膜,一部份。或者當不再需要其結構性支撐後，可於 下游刼作時將其移除，例如於製造期間用以支撐薄膜之 东J離襯裡，但其係在薄膜已被施加至晶圓或基底後才被 自薄膜移除。 |°^17] ”熱操作”一詞意指：物件或半導體封裝之組建 ，製造程序中的一個步驟，於此期間熱、或熱與壓力被 施加，藉以促使例如：固化、結合或焊接、或迴焊、或 金屬燒結。 20 200923039 發明詳述 [_8]低孔洞之晶片黏合膜係製自一種組成物，其包 括’-種增轫聚合物、—種可固化樹脂、一種用於固化 5 10 15 樹脂之固化劑、-種孔洞減少化合物、及—種用於孔洞 化合物之此孔洞減少化合物存在—有效數 里’有夕文數讀所選擇之可固化樹脂及增物聚合物系統 而異。於一實例中，孔洞減少化合物包括B-階化前排除 溶劑含量之黏合配方之〇·5至1〇重量％。於另一實例中， 孔洞減少化合物包括Β_階化前排除溶劑含量之黏合配方 之3至6重量％。 ^0019]孔洞減少化合物具有至少二個彼此毗連的矽- 氧邛伤及至夕個反應性官能。於一實例中，反應性官 月b為乙烯基、環氧基、丙烯酸酯、甲基丙烯酸酯、或為 這些之併合物。孔洞減少化合物為疏水性與不可水解， 及可為一種單體、寡聚物、共聚物、或聚合物。適合的 孔洞減少化合物之實例包括：丙烯酸酯化之矽氧烷、環 氧化之矽氧烷、甲基丙烯基氧基丙基三（三甲基矽氧基） 石夕烷、甲基丙婦基氧基丙基T-結構矽氧烧、乙烯基封端 之聚二甲基矽氧烷、乙烯基封端之（二苯基矽氧烷)_二甲 基矽氧烷共聚物、環氧基丙氧基丙基封端之聚二曱基矽 氧燒、環氧基丙氧基丙基封端之聚二曱基矽氧烷、及（乙 烯基f基矽氧烷)_二曱基矽氧烷共聚物，端基為三甲基矽 氧基。 [0020]用於孔洞減少化合物之固化劑為任何物料或物 20 200923039 料併合物’其可引發、蔓延、或促進孔洞減少化合物之 固化，及包括，但非限制性：促進劑、催化劑、引發劑、 與硬化劑。用於孔洞減少化合物之適合固化劑，其具有 丙烯酸酿、乙稀基、或甲基㈣酸@旨官能者，包括，但 5 非限制性：自由基引發劑，包括過氧化物，如：異丙苯 化過氧氫&一枯基過氧化物。適合用於孔洞減少化合 物之，化劑，其具有環氧基官能者包括，但非限制性:胺 類及芳族二胺類。用於孔洞減少化合物之固化劑與用於 可固化樹脂之固化劑可為相同或可為相異。 [0021]組成物包含i少—種可固化樹脂，此可固化樹 脂容許組成物流動藉以塗覆及黏晶，隨後固化使生成— 種強黏著性的本體用以連結。適合用於本發明之可固化 樹脂包括任何經聚合或交聯予以固化，並可提供所欲之 ，變性、模數、熱膨脹係數、及於特紅業應賴需之 其他性能者。可固化樹脂可為聚合物、寡聚物、單體、 ::這二的併合物，適合的可固化樹脂包括熱固體、彈 性體、熱固橡膠、或為這些的併合物。 10 15 [0022]選擇適合的可固化樹脂係依終端用途之應用、 =黏附的物件與基底而定’對於半導體封裝之終端用 途’可固化樹脂之選擇依下去而〜.士策 、伴攸下者而足•半導體晶片之類塑 及尺寸、基底之痛型、封|之幾何形狀、及製造變數， t二！Γί:及：需的可靠程度。組成物可包含或不 包含洛劑’由μ者就被製造的特殊薄膜之適合性予以 認定。典型地用於黏合組成物之其他組份可依施行者之 20 200923039 ，此類其他組份包括，但非限制性：固化 選擇予以添加 劑、助熔劑、潤溼劑、流動調節劑、增黏劑、及脫氣劑。 黏合組成物亦可包含填料，於此案例中，填料之存在量 至多為B-階化前排除溶劑含量之組成物之95重量0/〇。 5 [〇〇23]用於組成物之可固化樹脂可為固體、液體、或 為此二者之組合。適合的可固化樹脂包括：環氧樹脂、 丙烯酸醋或甲基丙烯酸酯、馬來醯亞胺或二馬來醯亞 胺、乙稀基驗、聚酿亞胺、石夕化的婦煙、；g夕酮樹脂、苯 乙烯樹脂、及氰酸酯樹脂。可固化樹脂存在一有效數量， 10 典型地介於B-staging前組成物之5與99.5重量％之間， 於一實例中，可固化樹脂存在量之範圍為B-階化前排除 溶劑含量之組成物之自30至97重量％。 [0024]於一實例中，可固化樹脂為一種固態芳族二馬 來S&亞胺(BMI)樹脂’適合的固態BMI為那些具有下列 15 結構者：200923039 IX. Description of the Invention: [Technical Fields of the Invention] [0001] The present invention has a method of retaining the characteristics of both 'flowing and infiltrating some of the films which are often low-pores, especially 4" (four) month b, and It is used to make this to bond wafers. In particular, four films can be used in semiconductor packages. [Prior Art] Films are often used to adhere articles to substrates in semiconductor packages. In general, these films are composition sheets to the body, and then, χ B Aging to the heart m, breaking the application to the form of 15 films. This can either dry the conductor wafer or wafer == apply: to: object. In the subsequent operation steps, when it is;:::: pieces to another: very controlled adhesive flow, human type, or, or unfortunately, the basin is also; ^/_ type of binding film It can be a gas-forming water, and a disadvantage of the column: a hole that gradually generates air or water vapor from the space that exists in the substrate. - When the work agent is cured, or during other thermal operations, and then the core is bonded to the lead frame substrate, the holes are treated as::, the title: has its right to _ and: = ^ day age The molecular weight will cause the thin method to have enough flow of 20 200923039 to wet the surface it is applied, resulting in undesirable bonding, thus requiring a bonding film that gives good flow and infiltration, while curing and other heat Operation, such as wire bonding, does not gradually create holes in the bond wires. 5 SUMMARY OF THE INVENTION [0004] The present invention is a low-porosity adhesive film made from a composition comprising: a toughening polymer, a curable resin, and a kind of 10 for a curable resin. A curing agent, a pore reducing compound having at least two ruthenium-oxygen (Si-O) moieties adjacent to each other and at least one reactive functional group, and a curing agent for the pore-reducing compound. [0005] In another example, the invention is a method for making a low-porosity adhesive film by: (1) providing a composition, 15 comprising: a toughening polymer, a curable resin a curing agent for a curable resin, a pore reducing compound having at least two 矽-oxygen moieties adjacent to each other and at least one reactive functional group, and a curing agent for the void reducing compound; (ii) applying The composition is - to the carrier; and (iii) B-staged to form the composition, thereby producing an adhesive film. In another embodiment, the invention is a method for reducing voids in a cured adhesive film, and more particularly, the invention is a method for reducing voids in a semiconductor package. The method comprises: (i) providing a composition comprising: a toughened polymer, a curable resin, a curing agent for a curable resin, and one having at least two mutually adjacent: 200923039 ί :::: Two: to the pores of the functional group to reduce the composition to - ^ H (9) to apply the group of human body on the group, (m) to order the composition, thus producing a carrier 5 10 15 hereinafter referred to as the loading body (4) The loading body 1: the second & side contacts to an object or its substrate; (V) removes the carrier by the adhesive (vi) if the adhesive is applied to the substrate of the object, "the morning adhesive is applied to In the case of an object, the substrate is contacted, and at least one thermal operation is received between the (4) member and the substrate thereof. In a special case or / basal wire, the bonded side hemp-semiconductor wafer i& For the purpose of clarity, the adhesive film may be applied or its substrate in step (iv), so after the carrier is removed in step (V), if the bonding (4) is applied to the object in step (:), the dragon substrate contacts the silk film. On the blast side, if applied to the substrate, the object is brought into contact with the adhesive film. Exposure 00=~ In another example, the present invention is a semiconductor package, which is provided by a vestibule. (1) A composition comprising: a toughened polymer, a m-type resin, and a a curing agent for curing a resin, having at least two ruthenium-oxygen moieties adjacent to each other and at least one reactive functional pore reducing compound, and a curing agent for the void reducing compound; (11) the composition Applying to a carrier; (iii) B-staged the composition, thereby preparing a binder film 丨 (iv) to bond the adhesive body to the adhesive side of the pancreas to contact a dicing tape; (v) laminating the bonding Membrane to cut 20 200923039 cutting tape, thus producing a bundle of wafer back side laminate (BWBL) film; (vi) removing the carrier, contacting the exposed bonding side of the BWBL film with the semiconductor wafer, and laminating the BWBL To the semiconductor wafer, the adhesive film is placed between the semiconductor wafer and the dicing tape; (v (1) cutting the wafer and the adhesive to make an individual semiconductor wafer with an adhesive; (viii) removing the adhesive from the dicing tape Film wafer; (ix) will have adhesive film The adhesive film side of the attached wafer is in contact with the substrate such that the adhesive film is placed between the semiconductor wafer and the substrate to create an assembly; and (x) the assembly is subjected to at least one thermal operation. [0010] ''Alkyl' The term refers to a branched or unbranched saturated hydrocarbon group having from 1 to 24 carbon atoms, such as fluorenyl ("Me"), ethyl ("Et"), n-propyl, isopropyl, n-Butyl, isobutyl, tert-butyl, octyl, decyl, and the like. [0011] The compound, the product 'or the composition', the effective amount, the word is deducted. A sufficient amount of the compound , product, or composition to provide the desired result. The exact amount required will vary depending on the particular compound, product, or composition used, its mode of use, and its class, and therefore does not always indicate Quantity, however, can be used in a common technique in the art to determine the effective amount using only general experimentation. [0012] The term "suitable" means that the compound, product, or composition provided can be used for the stated purposes, thereby providing the results described, and the suitability for the purpose can be utilized in the art. A common technique can be determined using only general experimentation. [0013] The term "lamination" (and variations thereof) means to combine at least two types of materials, typically using heat and pressure. 200923039 B-Staging, the term (and its variants) is used or treated to cause the material to be: if the material is dissolved into a part of the material that is cured or not made or the right material is pure When the solvent is free of solvent, if the second::2 also solidifies into a sticky or more hardened '1®, 1:, a kind of flowable adhesive, B• step will provide polar Curing so that additional curing can be achieved using an adhesive bond, which slows down the flow: the enamel, the resin or polymer portion is reinforced or cured, or is one of the 0 I curing agents - the word is used for Means: any material or joint material /, can be 5 hair, spread, Promoting the hardener of the composition, and including, <unrestricted, accelerator, catalyst, initiator, and hardener. 15 [0016] The term "carrier" is used to mean: any material that can be manufactured And the structural support of the film in the f-pressing process, the carrier can be, in the thin structure, and is still a part of the film during the manufacture and use of the film. Or, when structural support is no longer needed, it can be removed during downstream processing, such as during the manufacturing process to support the film, but after the film has been applied to the wafer or substrate It was removed from the film. |°^17] The term "thermal operation" means the formation of an article or semiconductor package, a step in the manufacturing process during which heat, or heat and pressure are applied, for example to cause curing, bonding or soldering, Or reflow, or metal sintering. 20 200923039 DETAILED DESCRIPTION OF THE INVENTION [_8] Low-porosity wafer bonding film is made from a composition comprising '- kinds of reinforced polymer, a curable resin, a curing agent for curing 5 10 15 resin, - The pore-reducing compound, and the pore-reducing compound used in the pore compound, differs in the effective number of the curable resin and the extender polymer system selected by the reading of the number. In one example, the void reducing compound comprises from 5 to 1% by weight of the bonding formulation excluding solvent content prior to B-staged. In another example, the void reducing compound comprises from 3 to 6% by weight of the adhesive formulation excluding solvent content prior to Β_stage. ^0019] The pore reducing compound has at least two 矽-oxygen nicks adjacent to each other and to a reactive function. In one embodiment, the reactive month b is a vinyl group, an epoxy group, an acrylate, a methacrylate, or a combination thereof. The pore reducing compound is hydrophobic and non-hydrolyzable, and may be a monomer, oligomer, copolymer, or polymer. Examples of suitable pore reducing compounds include: acrylated oxiranes, epoxidized oxiranes, methacryloxypropyltris(trimethyldecyloxy) oxalate, methyl propyl ketone Oxypropyl propyl T-structure oxime, vinyl-terminated polydimethyl siloxane, vinyl-terminated (diphenyl siloxane) dimethyl methoxy olefin copolymer, epoxy Propoxypropyl-terminated polydiindenyloxy oxo, epoxypropoxypropyl-terminated polydimethoxy methoxy oxane, and (vinyl f-based oxo oxane) An oxane copolymer having a terminal group of trimethylphosphonium. [0020] The curing agent for the void reducing compound is any material or material that can initiate, propagate, or promote the solidification of the void reducing compound, and includes, but is not limited to, promoters, catalysts, initiation Agent, and hardener. Suitable curing agent for void reducing compounds, which have acrylic acid, ethylene, or methyl (tetra) acid @, including, but not limited to: free radical initiators, including peroxides, such as: Propylene hydrogen peroxide & cumyl peroxide. Suitable for use in pore reducing compounds, agents having epoxy functional groups include, but are not limited to, amines and aromatic diamines. The curing agent for the void reducing compound may be the same as or different from the curing agent for the curable resin. [0021] The composition comprises less than a curable resin which allows the flow of the composition to be coated and bonded, followed by curing to form a strong adherent body for bonding. Curable resins suitable for use in the present invention include any which are cured by polymerization or crosslinking and which provide the desired properties, denaturation, modulus, coefficient of thermal expansion, and other properties desired by the special red industry. The curable resin may be a mixture of a polymer, an oligomer, a monomer, and a second, and a suitable curable resin includes a hot solid, an elastomer, a thermosetting rubber, or a compound of these. 10 15 [0022] Choosing a suitable curable resin depends on the end use application, = adhering the object and the substrate. 'The end use of the semiconductor package' can be selected from the curable resin. And the plastics and dimensions of semiconductor wafers, the pain type of the substrate, the geometry of the seals, and the manufacturing variables, t II! Γί: and: The degree of reliability required. The suitability of the composition may or may not be included in the suitability of the special film produced by the μ. Other components typically used to bond the composition may be in accordance with the enactment of 20 200923039, such other components including, but not limited to, curing options for additives, fluxes, wetting agents, flow regulators, tackifiers And deaerator. The adhesive composition may also comprise a filler. In this case, the filler is present in an amount of up to 95% by weight of the composition excluding the solvent content prior to B-staged. 5 [〇〇23] The curable resin used for the composition may be a solid, a liquid, or a combination of the two. Suitable curable resins include: epoxy resin, acrylic vinegar or methacrylate, maleic imine or dimaleimide, ethylene base test, poly-imine, and Shihwa's women's cigarette; A ketene resin, a styrene resin, and a cyanate resin. The curable resin is present in an effective amount, 10 typically between 5 and 99.5% by weight of the composition prior to B-staging. In one example, the curable resin is present in an amount ranging from B-stage to solvent exclusion. The composition is from 30 to 97% by weight. [0024] In one example, the curable resin is a solid aromatic dimale S&imine (BMI) resin. Suitable solid state BMIs are those having the following 15 structures:

其中X為一芳族基團，芳族基團之實例 包括：Wherein X is an aromatic group, and examples of the aromatic group include:

200923039200923039

其中η為1-3，Where η is 1-3,

[0025] 具有這些χ架橋基團之二馬來醯亞胺樹脂已有 商品，可得自例如：Sartomer (美國）或1103_技術公司（奥 地利）。 [0026] ^ 貫例中，可固化樹脂為一種馬來醯亞胺 13 200923039[0025] Two maleimide resins having these truss bridging groups are commercially available, for example, from Sartomer (USA) or 1103_Technology (Audrey). [0026] In a typical example, the curable resin is a maleimide 13 200923039

樹脂’其具有一般結構 其:η為1至3,及χΐ為—脂肪族或芳族基團。^實體 之只例匕括承（丁—婦）、聚（碳酸醋）、聚（胺基甲酸醋）、 聚（醚）、聚（酯）、單钟的石声与 .¾的娀風化合物、及單純的碳氫化合 物包含下列官能者，如，難其 、 5 .叛基、竣基、醯胺、胺基甲酸 酯、脈、或驗。這歧類形夕抖Bfcl σ + —喊I之秘月曰已有商品，可得自例如： 全國澱粉與化學品公司、艿η〇· · ^ J 及Daimppon印墨與化學品公 司。 10 [0027]方；-貫例中’挺成物之可固化樹脂為苯紛紛路 清漆聚醯亞胺：The resin 'has a general structure: η is 1 to 3, and χΐ is an aliphatic or aromatic group. ^The only examples of entities include Ding (female), poly (carbonated vinegar), poly(amino carboxylic acid vinegar), poly(ether), poly(ester), single-chord stone sound and .3⁄4 hurricane compound And simple hydrocarbons include the following functionalities, such as, difficult, 5. thiol, sulfhydryl, decylamine, urethane, vein, or test. This kind of ambiguity Bfcl σ + — shouting I's secret moon has been available, for example: National Starch and Chemical Company, 艿η〇·· ^ J and Daimppon Ink and Chemicals. 10 [0027] square; - in the example of the 'firmant's curable resin is benzene has a lacquer lacquer polyimine:

[0028] 於另一實例中，組成物之可固化樹脂為3_馬來 醯亞胺基丙酸/二曱基辛醇加合物。 [0029] 於另一實例中，組成物之可固化樹脂為一種馬 來醯亞胺樹脂，選自群組包括： ° Ο 其中C36代表一具有36個碳原子之線性或分支的鏈（具有 14 15 200923039 或不具有環狀部份）；[0028] In another example, the curable resin of the composition is a 3_maleimidopropionic acid/dimercaptooctyl alcohol adduct. [0029] In another example, the curable resin of the composition is a maleimide resin selected from the group consisting of: ° Ο wherein C36 represents a linear or branched chain having 36 carbon atoms (having 14 15 200923039 may or may not have a ring);

[0030]於一實例中，組成物之可固化樹脂為—種丙烯 酸酯樹脂，適合的丙烯酸酯樹脂包括那些具有下列一般 結構者：[0030] In one example, the curable resin of the composition is an acrylate resin, and suitable acrylate resins include those having the following general structure:

ΪΙ二為1^^以為^或偶’及^為一芳族或脂肪 。X實體之實例包括：聚（丁二烯）、聚（碳酸酯）、 聚(D胺基甲酸酯）、聚（醚）、聚（酯）、單純的碳氫化合物、 及單純的碳氫化合物包含下列官能者，如：羰基、羧基、 醯胺、胺基甲酸酯、脲、或醚。已有商品之物料包括二甲 基）丙烯酸丁酯、（曱基）丙烯酸異丁酯、三環癸烷二甲醇 =烯_、（曱基）丙烯酸2_乙基己醋、（甲基）丙婦酸異 六酉曰、（甲基）丙烯酸正十二烷酯、（甲基）丙烯酸烷基酯、 15 10 200923039 (曱基）丙烯酸十三烷酯、（曱基）丙烯酸正硬脂酯、（曱基） 丙烯酸環己酯、（甲基）丙烯酸四氫糠酯、（甲基）丙烯酸2-苯氧基乙酯、（曱基）丙烯酸異冰片酯、二（曱基）丙烯酸1，4-丁二醇酯、二（曱基）丙烯酸1,6-己二醇酯、二（甲基）丙烯 5 酸1,9-壬二醇酯、（曱基）丙烯酸過氟辛基乙酯、二（曱基） 丙烯酸1，10-癸二醇酯、壬基苯酚聚（曱基）丙烯酸丙氡 酯、及聚丙烯酸戊氧基四氫糠醋，可得自ICyoeisha化學 品公司、聚丁二烯胺基曱酸酯二曱基丙烯酸酯（CN302， NTX6513)、及聚二曱基丙烯酸丁二烯酯（CN301， ίο NTX6039、PRO6270)，可得自 Sartomer 公司、聚碳酸酯 胺基甲酸酯二丙烯酸酯（ArtResin UN9200A)，可得自 Negami化學工業公司、丙烯酸酯化之脂肪族胺基曱酸酯 寡聚物（Ebecryl 230，264，265，270，284，4830，4833， 4834，4835，4866，4881，4883，8402，8800-20R，8803， 15 8804)，可得自Radcure Specialities公司、聚g旨丙稀酸醋 寡聚物（Ebecryl 657, 770, 810, 830, 1657, 181〇, 183〇；)， 可得自Radcure Specialities公司、及環氧丙婦酸g旨樹脂 (CN104，11 卜 112 ’ 115，116，117，118，119，12〇， 124，136) ’可得自Sartomer公司。於一實例中，丙稀酸 20 i旨樹脂係選自群組包括.丙細酸異冰片δ旨、甲基丙稀酸 異冰片酯、丙烯酸十二烷酯、甲基丙烯酸十二燒醋、具 有丙烯酸酯官能的聚（丁二烯）、及具有曱基丙烯酸醋官能 的聚（丁二烯）。 [0031]於一實例中，組成物之可固化樹脂為一種乙婦 16 200923039 基醚樹脂，適合的乙烯基醚樹脂包括那些具有下列一般The second is 1^^ which is ^ or even' and ^ is an aromatic or fat. Examples of X entities include: poly(butadiene), poly(carbonate), poly(d-carbamate), poly(ether), poly(ester), simple hydrocarbon, and pure hydrocarbon The compound contains the following functional groups such as a carbonyl group, a carboxyl group, a decylamine, a urethane, a urea, or an ether. Commercially available materials include butyl dimethyl acrylate, isobutyl (meth) acrylate, tricyclodecane dimethanol = olefin, (meth) acrylic acid 2 - ethyl hexanoic acid, (methyl) propyl Isocyanuric acid, n-dodecyl (meth)acrylate, alkyl (meth)acrylate, 15 10 200923039 (decyl)tridecyl acrylate, n-stearyl phthalate, (fluorenyl) cyclohexyl acrylate, tetrahydrofurfuryl (meth) acrylate, 2-phenoxyethyl (meth) acrylate, isobornyl (mercapto) acrylate, bis(indenyl) acrylate 1,4 - Butylene glycol ester, 1,6-hexanediol di(meth)acrylic acid, 1,9-nonanediol di(meth)acrylic acid 5, perfluorooctyl ethyl (meth) acrylate, Di(indenyl) 1,10-decanediol acrylate, nonyl phenol poly(decyl) propyl acrylate, and polyacrylic acid pentyl tetrahydroanthracene vinegar, available from ICyoeisha Chemical Co., Ltd. Enamino phthalate dimercapto acrylate (CN302, NTX6513), and polybutadienyl acrylate (CN301, ίο NTX6039, PRO6270), From Sartomer, a polycarbonate urethane diacrylate (ArtResin UN9200A) available from Negami Chemical Industries, an acrylated aliphatic amino phthalate oligomer (Ebecryl 230, 264, 265, 270, 284, 4830, 4833, 4834, 4835, 4866, 4881, 4883, 8402, 8800-20R, 8803, 15 8804), available from Radcure Specialities, Inc., E. acetonitrile oligomer (Ebecryl 657) , 770, 810, 830, 1657, 181〇, 183〇;), available from Radcure Specialities, Inc., and epoxidized cyanate (CN104, 11 卜 112 '115, 116, 117, 118, 119, 12〇, 124, 136) 'Available from Sartomer. In one example, the acrylic acid 20 i resin is selected from the group consisting of: isobornyl arsenate δ, isobornyl methacrylate, dodecyl acrylate, methacrylate decocted vinegar, An acrylate-functional poly(butadiene) and a poly(butadiene) having a mercapto acrylate function. [0031] In one example, the curable resin of the composition is an Epoxy 16 200923039 base ether resin, and suitable vinyl ether resins include those having the following general

結構者. 其中η為1至6,及X3為一芳族或脂肪族基團。X3實體 之實例包括：聚（丁二烯）、聚（碳酸酯）、聚（胺基曱酸酯）、 5 聚（醚）、聚（酿）、單純的碳氫化合物、及單純的碳氫化合 物包含下列官能者，如：羰基、羧基、醯胺、胺基曱酸 酯、脲、或醚。已有商品之可固化樹脂包括：環己烷二 曱醇·一乙稀基鍵、十二烧基乙婦基鱗、環己基乙稀基鍵、 2-乙基己基乙烯基醚、二丙二醇二乙烯基醚、己二醇二 10 乙稀基醚、十八烷基乙烯基醚、及丁二醇二乙烯基醚， 可得自國際特殊產品公司（ISP)、Vectomer 4010，4020， 4030 ， 4040 ， 4051 ， 4210 ， 4220 ， 4230 ， 4060 ， 5015 ， 可得 Sigma-Aldrich 公司。 [0032] 於一實例中，組成物之可固化樹脂為一種環氧 15 樹脂，適合的環氧樹脂包括：雙酚、萘、及脂肪族類之 環氧樹脂，市售的物料包括：雙酚類環氧樹脂（Epiclon 830LVP，830CRP，835LV，850CRP)，可得自 Dainippon 印墨及化學品公司、萘類環氧樹脂（Epiclon HP4〇32)，可 得自Dainippon印墨及化學品公司、脂肪族環氧樹脂 2〇 (Araldite CY179，184，192，175，179)，可得自汽巴特 用化學品公司、（Epoxy 1234，249，206)，可得自Union Carbide公司、及（EHPE-3150)，可得自Daicel化學品工 17 5 10 200923039 司。其他適合的環氧樹脂包括：環 :::二苯基類環氧樹脂、萘類環氡樹脂、二環泰 本酞痛環氡樹脂、曱酚酚醛清漆 一烯- 樹腊稀釋劑、及其混合物。m㈣⑥、反應性環氧 組成物之可固化樹腊為， 反應獲得，其具有下列—般結構Structurer. wherein η is from 1 to 6, and X3 is an aromatic or aliphatic group. Examples of X3 entities include: poly(butadiene), poly(carbonate), poly(amino phthalate), 5 poly(ether), poly (brewed), simple hydrocarbons, and pure hydrocarbons. The compound contains the following functional groups such as a carbonyl group, a carboxyl group, a decylamine, an amino phthalate, a urea, or an ether. Commercially available curable resins include: cyclohexanedimethanol, ethylidene bond, dodecaline ethenyl scale, cyclohexylethylene bond, 2-ethylhexyl vinyl ether, dipropylene glycol Vinyl ether, hexanediol di 10 ethylene ether, octadecyl vinyl ether, and butanediol divinyl ether, available from International Special Products (ISP), Vectomer 4010, 4020, 4030, 4040 , 4051, 4210, 4220, 4230, 4060, 5015, available from Sigma-Aldrich. [0032] In one example, the curable resin of the composition is an epoxy 15 resin, suitable epoxy resins include: bisphenol, naphthalene, and aliphatic epoxy resins, and commercially available materials include: bisphenol Epoxy resin (Epiclon 830LVP, 830CRP, 835LV, 850CRP), available from Dainippon Ink and Chemicals, Naphthalene Epoxy (Epiclon HP4〇32), available from Dainippon Ink and Chemicals, Fat Family epoxy resin 2〇 (Araldite CY179, 184, 192, 175, 179), available from Steam Batt Chemical Company, (Epoxy 1234, 249, 206), available from Union Carbide, and (EHPE-3150) ), available from Daicel Chemicals 17 5 10 200923039 Division. Other suitable epoxy resins include: ring::: diphenyl epoxy resin, naphthalene ring oxime resin, bicyclo taiben tongtong ring enamel resin, phenolic novolac varnish monoolefin - tree wax diluent, and mixture. m (iv) 6. The curable wax of the reactive epoxy composition is obtained by a reaction having the following general structure.

其中ηι為2或更大，n2為1或更大 料可得自例如：全國及ηι> 112。這些物 [〇〇34 、 =国贏粉與化學品公司。 酉同樹腊，例中，組成物之可固化樹脂[種石夕 下二二Ϊ的侧㈣括反應性卿脂，其具有Where ηι is 2 or greater and n2 is 1 or greater is available, for example, from the national and ηι> 112. These things [〇〇34, = national win powder and chemical companies.酉同树腊, in the case, the curable resin of the composition [the side of the seed 夕下二二Ϊ (4) includes reactive qingzhi, which has

其中ηι為0或任何整數，乂4與χΐ 氫、曱基、胺、 18 15 200923039 環氧基、羧基、羥基、丙烯酸酯、甲基丙烯酸酯、巯基、 苯酚、或乙烯基官能的基團，R2與R3可為：-H、-CH3、 乙烯基、苯基、或任何具有多於二個碳之碳氫化合物結 構。市售的物料包括：KF8012、KF8002、KF8003、 5 KF-1001、X-22-3710、KF6001、X-22-164C、KF-2001、 X-22-170DX、X-22-173DX、X-22-174DX、X-22-176DX、 ICF-857、KF-862、KF_80(H、X-22-3367、及 X-22-3939A， 可得自Shin-Etsu石夕酮國際貿易公司（上海）。 [0035] 於另一實例中，組成物之可固化樹脂為一種苯 10 乙烯樹脂，適合的苯乙烯樹脂包括那些樹脂，其具有下 列一般結構.Wherein ηι is 0 or any integer, 乂4 and hydrazine, hydrazino, amine, 18 15 200923039 epoxy, carboxyl, hydroxyl, acrylate, methacrylate, decyl, phenol, or vinyl functional group, R2 and R3 may be: -H, -CH3, vinyl, phenyl, or any hydrocarbon structure having more than two carbons. Commercially available materials include: KF8012, KF8002, KF8003, 5 KF-1001, X-22-3710, KF6001, X-22-164C, KF-2001, X-22-170DX, X-22-173DX, X-22 -174DX, X-22-176DX, ICF-857, KF-862, KF_80 (H, X-22-3367, and X-22-3939A, available from Shin-Etsu International Trading Company (Shanghai). [0035] In another example, the curable resin of the composition is a benzene 10 vinyl resin, and suitable styrenic resins include those resins having the following general structure.

其中η為1或更大，R4為-H或-CH3，及X6為一脂肪族 基團。X6實體之實例包括：聚（丁二烯）、聚（碳酸酯）、聚 15 (胺基曱酸酯）、聚（醚）、聚（酯）、單純的碳氫化合物、及 單純的碳氫化合物包含下列官能者，如：羰基、羧基、 醯胺、胺基曱酸酯、脲、或醚。這些類型之樹脂已有商 品，可得自例如：全國澱粉與化學品公司、或 Sigma-Aldricli 公司。 2〇 [0036] 於另一實例中，組成物之可固化樹脂為一種氰 酸酯，適合的氰酸酯樹脂包括那些具有下列一般結構者： 19 200923039 (νξοο^~χ? 其中η為1或更大，及X7為一碳氫化合物基團。X7實 體之實例包括：二酚、苯酚、或甲酚酚醛清漆、二環戊 二烯、聚丁二烯、聚碳酸酯、聚胺基曱酸酯、聚醚、或 5 聚醋。市售的物料包括：AroCy L-10、AroCy XU366、 AroCy XU371、AroCy XU378、XU71787.02L、及 XU71787.07L，可得自 Huntsman LLC 公司；Primaset PT30 ' Primaset PT30 S75 ' Primaset PT60 ' Primaset PT60S ' Primaset BADCY、Primaset DA230S、Primaset ίο MethylCy、及 Primaset LECY，可得自 Lonza Group Limited公司；2-烯丙基苯酚氰酸酯、4-曱氧基苯酚氰酸 酯、2,2-二（4-氰酸基苯酚）-1，1，1，3,3,3-六氟丙烷、雙酚A 氰酸酯、二烯丙基雙酚A氰酸酯、4-苯基苯酚氰酸酯、 1，1，1-三（4-氰酸基苯基）乙烷、4-枯基苯酚氰酸酯、l，l-15 二(4-氰酸基苯基）乙烷、2,2,3,3,4,4,5,5,6,6,7,7-十二氟-辛 烧二醇二氰酸醋、及4,4’-二紛氰1酸醋，可得自Oakwood Products 公司0 [0037] 組成物另外包括一種增韌聚合物，此增韌聚合 物作為一種增韌劑，並提供組成物原始強度，於此所使 20 用之原始強度係指：物料於其被固化前之黏著與内聚強 度。增韌聚合物可為可固化或不可固化，及可為任何精 於此技藝者所習知可賦予增韌性能者。適合的增韌聚合 物實例包括：熱塑性橡膠、聚（丁二烯）聚合物、橡膠聚合 20 200923039 物、彈性體、或這些之併合物。 [0038] 熱塑性橡膠，如：羧基封端之丁二烯_腈（(：13>?) 橡膠、羧基封端之丁二烯腈（CTBN)/環氧樹脂加合物、 丙烯酸酷橡膠、己烯基封端之丁二烯橡膠、及腈丁二烯 5 橡膠(NBR)，特別適合用作增韌聚合物。於一實例中，增 韌聚合物為一種CTBN環氧樹脂加合物，其包括約2〇—8〇 重量％(：丁3^與約20-80重量％二環氧丙醚雙酚A:雙酚a 環乳树脂（DGEBA)。有多種的CTBN物料可得自Noveon 公司，及有多種的雙盼A環氧樹脂物料可得自j)ajnipp〇n ίο 印墨及化學品公司與Shell化學品公司，nbr橡膠可講 自Zeon公司。 [0039] 於一實例中’增韌聚合物為—種聚（丁二烯）聚合 物’適合的聚（丁二烯）聚合物包括··聚（丁二烯）、環氧化 之聚（丁二烯）、馬來聚（丁二烯）、丙稀酸化之聚（丁二烯）、 15 丁二烯-苯乙烯共聚物、腈-丁二稀橡滕(NBR)、及丁二婦 -丙烯腈共聚物，例如：羧基封端之丁二烯-丙烯腈（CTBN) 橡膠。已有商品的物料包括：丁二稀均聚物（Ricon 13 0， 131，134，142，150，152，153，154，156，157，P30D)， 可得自Sartomer公司；丁二烯與苯乙烯之無規共聚物 20 (Ricon 100，181 ’ 184)，可得自 Sartomer 公司；馬來酸 化之聚（丁二烯）(Ricon 130MA8，130MA13，130MA20， 131MA5，131MA10，131MA17，131MA20，156MA17)， 可得自Sartomer公司；丙浠酸化之聚（丁二婦）(CN302， NTX6513，CN301，NTX6039，PRO6270，Ricacryl 3100， 21 200923039Wherein η is 1 or more, R4 is -H or -CH3, and X6 is an aliphatic group. Examples of X6 entities include: poly(butadiene), poly(carbonate), poly 15 (amino phthalate), poly(ether), poly(ester), simple hydrocarbons, and pure hydrocarbons. The compound contains the following functional groups such as a carbonyl group, a carboxyl group, a decylamine, an amino phthalate, a urea, or an ether. These types of resins are commercially available from, for example, National Starch and Chemicals, or Sigma-Aldricli. 2〇 [0036] In another example, the curable resin of the composition is a cyanate ester, and suitable cyanate resins include those having the following general structure: 19 200923039 (νξοο^~χ? where η is 1 or Larger, and X7 is a hydrocarbon group. Examples of X7 entities include: diphenol, phenol, or cresol novolac, dicyclopentadiene, polybutadiene, polycarbonate, polyamine decanoic acid Ester, polyether, or 5 polyester. Commercially available materials include: AroCy L-10, AroCy XU366, AroCy XU371, AroCy XU378, XU71787.02L, and XU71787.07L, available from Huntsman LLC; Primaset PT30 'Pritaset PT30 S75 ' Primaset PT60 ' Primaset PT60S ' Primaset BADCY, Primaset DA230S, Primaset ίο MethylCy, and Primaset LECY, available from Lonza Group Limited; 2-allyl phenol cyanate, 4-decyloxy phenol cyanate , 2,2-bis(4-cyanate phenol)-1,1,1,3,3,3-hexafluoropropane, bisphenol A cyanate, diallyl bisphenol A cyanate, 4 -Phenylphenol cyanate, 1,1,1-tris(4-cyanatephenyl)ethane, 4-cumylphenol cyanate l,l-15 bis(4-cyanatephenyl)ethane, 2,2,3,3,4,4,5,5,6,6,7,7-dodecyl-octanediol Cyanuric acid vinegar, and 4,4'-dichlorocyanoic acid vinegar, available from Oakwood Products, Inc. 0 [0037] The composition additionally includes a toughening polymer as a toughening agent, and The original strength of the composition is provided, and the original strength used herein is the adhesion and cohesive strength of the material before it is cured. The toughening polymer may be curable or non-curable, and may be any Those skilled in the art are known to impart tougheners. Examples of suitable toughening polymers include: thermoplastic rubber, poly(butadiene) polymers, rubber polymerization 20 200923039, elastomers, or a combination thereof. Thermoplastic rubbers such as carboxyl terminated butadiene-nitrile ((:13>?) rubber, carboxyl-terminated butadiene nitrile (CTBN)/epoxy adduct, acrylic rubber, hexenyl The blocked butadiene rubber and nitrile butadiene rubber (NBR) are particularly suitable for use as a toughening polymer. In one example, the toughening polymer is a CTBN epoxy resin. Thereof, comprising from about 2〇-8〇 wt% (: D ^ 3 and about 20-80 wt% diglycidyl ether bisphenol A: a bisphenol A resin ring milk (DGEBA). There are a variety of CTBN materials available from Noveon, and a variety of double-anti-A epoxy materials are available from j) ajnipp〇n ίο ink and chemical companies and Shell Chemicals, nbr rubber can be from Zeon . [0039] In one example, a toughened polymer is a poly(butadiene) polymer suitable poly(butadiene) polymer including poly(butadiene), epoxidized poly(butyl) Diene), maleated poly(butadiene), acrylicized poly(butadiene), 15 butadiene-styrene copolymer, nitrile-butadiene rubber (NBR), and dibutyl- An acrylonitrile copolymer, for example, a carboxyl terminated butadiene-acrylonitrile (CTBN) rubber. Existing commercial materials include: dibutyl homopolymer (Ricon 13 0, 131, 134, 142, 150, 152, 153, 154, 156, 157, P30D), available from Sartomer; butadiene and benzene Random copolymer of ethylene 20 (Ricon 100, 181 '184) available from Sartomer; maleated poly(butadiene) (Ricon 130MA8, 130MA13, 130MA20, 131MA5, 131MA10, 131MA17, 131MA20, 156MA17) , available from Sartomer; a polyacrylic acid (Ding Erfu) (CN302, NTX6513, CN301, NTX6039, PRO6270, Ricacryl 3100, 21 200923039

Ricacryl 3500)，可得自Sartomer公司；環氧化之聚（丁二 稀）(Polybd 600，605)，可得自 Sartomer 公司；及 Epolead PB3600，可得自 Daicel Chemical Industries 公司；及丙 烯腈與丁二烯共聚物（Hycar CTBN系列，ATBN系列， 5 VTBN系列，及ETBN系列），可得自Hanse Chemical公 司。 [0040] 其他適合的物料可用作組成物之增韋刃聚合物者 包括橡膠聚合物，如：單乙烯基芳族碳氫化合物與共軛 二烯之嵌段共聚物，例如：笨乙烯-丁二烯、苯乙烯-丁二 10 烯-苯乙烯（SBS)、笨乙烯-異戊二烯-苯乙烯（SIS)、苯乙烯 -乙烯-丁烯-苯乙烯（SEBS)、及苯乙烯-乙烯-丙烯-苯乙烯 (SEPS)。 [0041] 其他適合的物料可用作組成物之增韌聚合物者 包括.：乙烯-乙酸乙烯酯聚合物、其他的乙烯酯與共聚 15 物，例如：曱基丙婦酸乙稀醋、乙稀丙稀酸正丁醋、及 乙烯丙烯酸、聚乙酸乙烯酯與其無規共聚物、聚丙烯酸 酯、聚酷胺、聚醋、及聚乙稀基醇與其共聚物。 [0042] 適合的物料可用作組成物之增韌聚合物者另外 包括：聚醯胺、苯氧基、聚苯並噁嗪、聚醚颯、聚醯亞 20 胺、苯並噁嗪、乙烯基醚、聚苯醯基唑、聚酯、聚苯乙 烯、聚碳酸酯、聚（氯乙稀）、聚異丁稀、聚丙烯腈、聚（曱 基丙烯酸曱酯）、聚（乙酸乙烯酯）、聚（2-乙烯基吼啶）、順 -1,4-聚異戊二烯、3,4-聚氯戊二烯、乙烯基共聚物、聚（環 氧乙烷）、聚（乙二醇）、聚曱醛、聚乙醛、聚（b-丙炔丙酮）、 22 200923039 聚（10-癸酸酯）、聚（對酞酸乙烯酯）、聚己内醯胺、聚（11-十一烷基醯胺）、聚（間-伸苯基-對酞酸醯胺）、聚（四亞曱 基-間-苯磺基醯胺）、聚酯芳基化物、聚（伸苯基氧化物）、 聚（伸苯基硫化物）、聚砜、聚醯亞胺、聚醚醚酮、聚醚醯 5 亞胺、氟化之聚醯亞胺、聚醯亞胺矽氧烷、聚異吲哚並 喹唑啉二酮、聚硫醚醯亞胺、聚-苯基-喹噁啉、 polyquinixalone、酸亞胺-芳基醚苯基啥喔°林共聚物、聚 啥鳴琳、聚苯並味。坐、聚苯並°惡α坐、聚原冰片稀、聚（付 芳基醚）、聚矽烷、聚對二曱苯、苯並環丁烯、羥基（苯並 10 噁唑）共聚物、聚（矽伸芳基矽氧烷）、及聚苯並咪唑。 [0043] 於一實例中，組成物之增韌聚合物為一種聚合 物，其包括一主幹，及自主幹垂掛至少一個矽氧烷部份 與至少一個能夠反應生成新共價鍵之反應性部份。適合 的矽氧烷實例包括彈性體的聚合物，製自：3-(三-(三曱 15 基矽烷基氧基）矽烷基）-丙基曱基丙烯酸酯、丙烯酸正丁 酯、曱基丙烯酸環氧丙酯、丙烯腈、及氰基乙基丙烯酸 S旨；3-(三-(三曱基石夕烧基氧基）梦烧基）-丙基曱基丙婦酸 酯、丙烯酸正丁酯、曱基丙稀酸環氧丙酯、及丙烯腈； 及3-(三-(三曱基矽烷基氧基）矽烷基）-丙基曱基丙烯酸 20 酯、丙烯酸正丁酯、曱基丙烯酸環氧丙酯、及氰基乙基 丙稀酸醋。 [0044] 若組成物之可固化樹脂及/或增韌聚合物需要 固化劑時，其選擇依所使用之可固化樹脂及/或增韌聚合 物及所使用之操作條件而定。用於可固化樹脂及/或增韌 23 200923039 聚統之固化劑存在一有效的數量，典型地為高至 势前排除溶劑含量之組成物之6〇重量％。若可固 化知月曰及增朝聚合物同時需要固化劑時，那些固化劑可 為相同或其可為各不相同。作為固化劑，組成物可使用 5 芳族胺、脂環族胺、脂肪族胺、三級膦、三嗪、金屬鹽、 芳族羥基化合物、或這些之併合物。此類催化劑之實例 包括咪唑類，如=2-曱基咪唑、2_十一烷基咪唑、2_十七 烷基咪唑、2-苯基咪唑、2_乙基_4_曱基咪唑、丨_苄基，2_ 甲基咪唑、1-丙基-2-曱基咪唑、丨_氰基乙基甲基咪唑、 10 1-氰基乙基乙基-4-曱基口米。坐、L氰基乙基_2_十一烧基 咪唑、1-氰基乙基苯基咪唑、胍胺基乙基_2_曱基咪 唑、及一種咪唑與苯偏三酸之加成產物；三級胺類如： N，N-二曱基苄胺、N，N_二曱基笨胺、N，N_:曱基曱苯胺、 N，N-二曱基-對-茴香胺、對_鹵素基_N，N_二甲基笨胺、 15 2-N-乙基本基乙醇、三_正丁胺、D比咬、啥喻、n_曱基 嗎啉、三乙醇胺、三乙二胺、N，N，N，，N，_四曱基丁二胺、 N-甲基旅。疋，本酿類，如：笨齡、曱齡、二曱苯盼、間 苯二酚、及間笨三酚；有機金屬鹽類，如：萘酸鉛、硬 脂酸鉛、萘酸鋅、辛酸鋅、油酸錫、馬來酸二丁錫、萘 20 酸錳、萘酸鈷、及乙醯丙酮鐵；及無機金屬鹽類，如： 氯化錫、氯化辞、及氣化鋁；過氧化物，如：苯醯過氧 化物、月桂醯過氡化物、辛醯過氧化物、乙醯過氧化物、 對-氯苯醯過氧化物、及二_三級丁基二過酞酸酯；酸酐， 如·羧酸酐、馬來酸酐' 酞酸酐、月桂酸酐、苯均四酸 24 200923039 酐、苯偏三酸酐、六氫酞酸酐、六氫苯均四酸酐、及六 氫苯偏三酸酐；偶氮化合物，如：偶氮異丁基腈、2 2，_ 偶氮二丙烷、m，m、偶氮氧基苯乙烯、氫臭氧、及其混合 物。 5 [0045]於另—實例中，用於可固化樹脂及/或增韌聚合 物之固化劑為一種固化促進劑’可選自群組包括：三苯 基膦、烷基取代之咪唑、咪唑鹽、鑌鹽、四級膦化合物、 观&鎘、金屬螯合物、1，8_二。丫環[κο]十一碳稀、或 其混合物。 10 [〇〇46]於另一實例中，用於可固化樹脂及/或增韌聚合 物之固化劑可為一種自由基引發劑或為一種離子引發 劑，係依選擇一種自由基或離子固化之可固化樹脂及/或 增韌聚合物而定。若是使用一種自由基引發劑，其將存 在一有效數量，有效數量典型地為B-階化前排除溶劑含 15 量之黏合組成物之0·1至10重量％。自由基引發劑包括 過氧化物，如：過辛酸丁酯與二枯基過氧化物，及偶氮 化合物，如.2,2 -偶氮一(2-甲基-丙腈）、與2,2，-偶氮二 (2-甲基-丁腈）。 [0047] 若是使用一種離子引發劑，其將存在一有效數 20 量，有效數量典型地為階化前排除溶劑含量之組成物 之0.1至10重里％。適合的離子引發劑包括：二氰二醯 胺、己一醯二肼、氟化爛（BF3)-胺錯合物、胺鹽、及經修 飾的咪嗤化合物。 [0048] 金屬化合物亦可被用作氰酸酯樹脂系統之固化 25 200923039 促進劑，其包括，但非限制性：金屬萘酸鹽、金屬乙醯 丙酮鹽（螯合物）、金屬辛酸鹽、金屬乙酸鹽、金屬鹵化物' 金屬味唾錯合物、及金屬胺錯合物。 [0049] 其他固化促進劑可被包括於組成物之可固化樹 5 脂及/或增韌聚合物者包括：三苯基膦、烷基取代之咪 唑、咪唑鏽鹽、及硼酸鑌。 [0050] 於某些案例中，對組成物可能意欲使用多於一 種類型的固化，例如：可能意欲同時使用離子及自由基 f發，於此案例中，自由基固化與離子固化樹脂及/或增 1〇 韌聚合物可同時被用於組成物中。這些組成物於每種類 型的可固化樹脂及/或增韌聚合物包含有效數量的引發 劑，此種組成物可容許，例如：固化程序藉使用紫外線 照射之離子引發予以起始，及於一隨後的操作步驟中， 藉施加熱之自由基引發予以完成。 15 [〇〇51] 一種或多種填料可被包括於組成物中，及可被Ricacryl 3500), available from Sartomer; epoxidized poly(butyl) (Polybd 600, 605) available from Sartomer; and Epolead PB3600 available from Daicel Chemical Industries; and acrylonitrile and butyl The olefin copolymers (Hycar CTBN series, ATBN series, 5 VTBN series, and ETBN series) are available from Hanse Chemical Company. [0040] Other suitable materials can be used as the stimulating edge polymer of the composition, including rubber polymers, such as: block copolymers of monovinyl aromatic hydrocarbons and conjugated dienes, for example: stupid ethylene - Butadiene, styrene-butadiene-styrene (SBS), stupid ethylene-isoprene-styrene (SIS), styrene-ethylene-butylene-styrene (SEBS), and styrene- Ethylene-propylene-styrene (SEPS). [0041] Other suitable materials can be used as the toughening polymer of the composition including: ethylene-vinyl acetate polymer, other vinyl esters and copolymerized materials, for example: ethyl thioglycolate, vinegar, B Succinic acid n-butyl vinegar, and ethylene acrylic acid, polyvinyl acetate and its random copolymer, polyacrylate, polyamine, polyester, and polyvinyl alcohol and its copolymer. [0042] Suitable materials can be used as the toughening polymer of the composition, and additionally include: polydecylamine, phenoxy, polybenzoxazine, polyether oxime, polyfluorene 20 amine, benzoxazine, ethylene Ether, polybenzoxazole, polyester, polystyrene, polycarbonate, poly(vinyl chloride), polyisobutylene, polyacrylonitrile, poly(decyl methacrylate), poly(vinyl acetate) ), poly(2-vinyl acridine), cis-1,4-polyisoprene, 3,4-polychloroprene, vinyl copolymer, poly(ethylene oxide), poly(B) Glycol), polyacetal, polyacetaldehyde, poly(b-propynepropanone), 22 200923039 poly(10-decanoate), poly(vinyl phthalate), polycaprolactam, poly(11 - undecyl decylamine), poly(m-phenylene-p-nonyl decanoate), poly(tetradecyl-m-phenylsulfonyl decylamine), polyester arylate, poly(benzene) Base oxide), poly(phenylene sulfide), polysulfone, polyimide, polyetheretherketone, polyether oxime 5 imine, fluorinated polyimine, polyamidoxime, Polyisoindole quinazolinedione, polythioether quinone imine, poly- Yl - quinoxaline, polyquinixalone, acid imide - aryl phenyl ether Lin Han oh ° copolymers, poly Han Ming Lin, polystyrene and taste. Sit, polybenzopyrene, agglomerated, borneol, poly(p-aryl ether), polydecane, poly(p-phenylene), benzocyclobutene, hydroxy (benzoxoxazole) copolymer, poly (矽 aryl oxane), and polybenzimidazole. [0043] In one example, the toughening polymer of the composition is a polymer comprising a backbone, and autonomously hanging at least one oxoxane moiety and at least one reactive moiety capable of reacting to form a new covalent bond Share. Examples of suitable decanes include elastomeric polymers made from: 3-(tris-(trimethylene decyloxy)decyl)-propyl decyl acrylate, n-butyl acrylate, methacrylic acid Glycidyl acrylate, acrylonitrile, and cyanoethyl acrylate S; 3-(tri-(trimethyl sulphonyloxy)methanol)-propyl decyl propyl acrylate, n-butyl acrylate , mercaptopropyl acrylate, and acrylonitrile; and 3-(tris-(tridecyldecyloxy)decyl)-propylmercaptoacrylate 20 ester, n-butyl acrylate, methacrylic acid Glycidyl acrylate, and cyanoethyl acrylate vinegar. [0044] When a curing agent is required for the curable resin and/or toughening polymer of the composition, the choice depends on the curable resin and/or toughening polymer used and the operating conditions used. Curing Resin for Curing Resin and/or Toughening 23 200923039 There is an effective amount of curing agent, typically 6% by weight of the composition excluding solvent content before the high potential. If the curing agent can be cured and the curing agent is required at the same time, those curing agents may be the same or may be different. As the curing agent, the composition may be a 5-aromatic amine, an alicyclic amine, an aliphatic amine, a tertiary phosphine, a triazine, a metal salt, an aromatic hydroxy compound, or a mixture of these. Examples of such catalysts include imidazoles such as = 2-mercaptoimidazole, 2-undecylimidazole, 2-heptadecylimidazole, 2-phenylimidazole, 2-ethyl-4-indolizole,丨_Benzyl, 2-methylimidazole, 1-propyl-2-mercaptoimidazole, 丨-cyanoethylmethylimidazole, 10 1-cyanoethylethyl-4-indole. Sitting, L-cyanoethyl 2-11-dedecylimidazole, 1-cyanoethylphenylimidazole, decylamino-2-indolyl imidazole, and an addition product of imidazole and trimellitic acid Tertiary amines such as: N,N-dimercaptobenzylamine, N,N-dimercaptoamine, N,N_:decyl anilide, N,N-didecyl-p-anisamine, pair _halo-N,N-dimethyl phenylamine, 15 2-N-ethyl-based ethanol, tri-n-butylamine, D-bite, metaphor, n-mercaptomorpholine, triethanolamine, triethylene Amine, N, N, N, N, _ tetradecyl butyl diamine, N-methyl brigade.疋, the brewing, such as: aging, age, bismuth benzene, resorcinol, and stupid phenol; organic metal salts, such as: lead naphthalate, lead stearate, zinc naphthalate, Zinc octoate, tin oleate, dibutyltin maleate, manganese naphthalene 20, cobalt naphthalate, and iron acetonitrile; and inorganic metal salts such as tin chloride, chlorinated, and vaporized aluminum; Peroxides such as: benzoquinone peroxide, laurel, bismuth peroxide, acetam peroxide, p-chlorophenyl hydrazine peroxide, and bis-tert-butyl bis-peroxy citrate Ester; acid anhydride, such as carboxylic anhydride, maleic anhydride, phthalic anhydride, lauric anhydride, pyromellitic acid 24 200923039 anhydride, trimellitic anhydride, hexahydrophthalic anhydride, hexahydrobenzene tetracarboxylic anhydride, and hexahydrobenzene Anhydride; an azo compound such as azoisobutylcarbonitrile, 2 2, azodipropane, m, m, azooxystyrene, hydrogen ozone, and mixtures thereof. [0045] In another example, the curing agent for the curable resin and/or the toughening polymer is a curing accelerator' which may be selected from the group consisting of: triphenylphosphine, alkyl substituted imidazole, imidazole Salt, strontium salt, quaternary phosphine compound, Guan & cadmium, metal chelate, 1,8_2.丫 ring [κο] eleven carbon, or a mixture thereof. 10 [〇〇46] In another example, the curing agent for the curable resin and/or the toughening polymer may be a free radical initiator or an ionic initiator, depending on a free radical or ionic curing It depends on the curable resin and/or the toughening polymer. If a free radical initiator is used, it will be present in an effective amount, typically from 0.1 to 10% by weight of the binder composition containing 15 parts of the solvent before the B-stage. Free radical initiators include peroxides such as: butyl peroctoate and dicumyl peroxide, and azo compounds such as .2,2-azo-(2-methyl-propionitrile), and 2, 2,-Azobis(2-methyl-butyronitrile). [0047] If an ionic initiator is used, it will have an effective amount of 20, and the effective amount is typically 0.1 to 10% by weight of the composition excluding the solvent content before the step. Suitable ionic initiators include: dicyanamide, hexamethylene dioxime, fluorinated (BF3)-amine complexes, amine salts, and modified oxime compounds. The metal compound can also be used as a curing agent for the cyanate resin system 25 200923039 accelerator, including, but not limited to, metal naphthate, metal acetoacetate (chelate), metal octoate, Metal acetate, metal halide 'metal saliva complex, and metal amine complex. Other curing accelerators which may be included in the curable resin and/or toughening polymer of the composition include triphenylphosphine, alkyl substituted imidazole, imidazole rust salt, and barium borate. [0050] In some cases, more than one type of cure may be intended for the composition, for example, it may be desirable to use both ions and free radicals, in this case, free radical curing with ionic curing resins and/or The reinforced polymer can be used in the composition at the same time. These compositions comprise an effective amount of an initiator for each type of curable resin and/or toughening polymer, such compositions permitting, for example, a curing procedure initiated by ion initiation using ultraviolet radiation, and In the subsequent steps, it is completed by the application of hot radicals. 15 [〇〇51] one or more fillers may be included in the composition and may be

添加，藉以調整許多性能，包括：流變性、應力、熱膨 脹係數、，電及/或熱傳導性、及模數。特別類型的填&對 本發明並不具關鍵性，其可由精於此方面技蓺 終端用途之需要予以選擇。填料可為傳導,;或非^ 2〇 性’適合的傳導性填料之實例包括：碳黑、石墨、金、 銀、鋼、翻、趣、鎳、銘、碳化石夕、氮化硕、鑽石、及 ，化鋁。適合的非傳導性填料之實例包括：氧化鋁、氫 氧化鋁、二氧化矽、蛭石、雲母、矽礦石、碳酸鈣、^ 氧化鈦、砂、玻璃、硫酸鋇、錯、碳黑、有機填料、I 26 200923039 經鹵化的乙烯聚合物，如：四氟乙烯、三氣乙稀、亞乙 烯基氟化物、乙烯基氟化物、亞乙烯基氣化物、及乙烯 基氣化物。填料細粒可為自奈米尺寸至數密耳（mil)範圍 之任何適當尺寸，對於任何特殊的封裝形態，其尺寸之 5 選擇在精於此方面技藝者之專業内。填料之存在量可為 B-階化前排除溶劑含量之組成物之〇至％重量％。… [0052] 於一實例中，可將一種偶合劑、或黏著促進劑 加至組成物，黏著促進劑之選擇係依應用的需求與所使 用之可固化樹脂化學而定。若是使用黏著促進劑時，將 1〇 使用一有效數量’典型地至高為B-階化前排除溶劑含量 -之組成物之5重量％。適合的黏著促進劑之實例包括： 環氧樹脂·•類型之矽烷偶合劑、胺-類型之矽烷偶合劑、疏 -類型之矽烷偶合劑；Z6040環氧矽烷、Z603曱基^稀^ 氣基丙基三甲氧基砍烧、或Z6020胺秒烧，可得自d〇w 15 c〇rning公司；A186矽烷、A187矽烧、A174矽烷、或 A1289，可得自OSI Silquest公司；有機石夕烧S1264，可 得自Degussa公司；Johoku Chemical CBT-1石炭苯並三〇坐， 可得自Johoku Chemical公司；具官能性的苯並三σ坐；。塞 唑；鈦酸鹽；及锆酸鹽。Add, to adjust a number of properties, including: rheology, stress, thermal expansion coefficient, electrical and / or thermal conductivity, and modulus. The particular type of fill & is not critical to the invention and can be selected from the needs of the end use of the technology. Fillers can be conductive, or non-metallic properties. Examples of suitable conductive fillers include: carbon black, graphite, gold, silver, steel, turn, fun, nickel, Ming, carbon carbide, nitride, diamond And, aluminum. Examples of suitable non-conductive fillers include: alumina, aluminum hydroxide, cerium oxide, vermiculite, mica, strontium ore, calcium carbonate, titanium oxide, sand, glass, barium sulfate, carbon, black, organic fillers. I 26 200923039 Halogenated ethylene polymers such as tetrafluoroethylene, triethylene glycol, vinylidene fluoride, vinyl fluoride, vinylidene vapor, and vinyl vapor. The filler granules can be of any suitable size ranging from nanometer size to a few mils. For any particular package form, the size of the package is chosen to be within the skill of those skilled in the art. The filler may be present in an amount of from 〇 to % by weight of the composition excluding the solvent content prior to B-staged. [0052] In one example, a coupling agent, or adhesion promoter, may be added to the composition, and the choice of adhesion promoter will depend on the needs of the application and the chemistry of the curable resin used. If an adhesion promoter is used, an effective amount 'typically up to 5% by weight of the composition excluding the solvent content before the B-stage is used. Examples of suitable adhesion promoters include: epoxy resin type decane coupling agent, amine type decane coupling agent, sparing-type decane coupling agent; Z6040 epoxy decane, Z603 sulfhydryl group Base trimethoxy chopping, or Z6020 amine second burning, available from d〇w 15 c〇rning; A186 decane, A187 sputum, A174 decane, or A1289, available from OSI Silquest; Organic Shi Xi S1264 Available from Degussa; Johoku Chemical CBT-1, a charcoal benzotriazole, available from Johoku Chemical; a functional benzotriazine; Pyrazole; titanate; and zirconate.

ZQZQ

[0053] 於另一實例中，可將一種界面活性劑加至組成 物，適合的界面活性劑包括：矽酮、聚乙二醇、聚氧基 伸乙基/聚氧基伸丙基嵌段共聚物、以乙二胺為基底之聚 氧基伸乙基/聚氧基伸丙基嵌段共聚物、以多元醇為基底 之聚氧基伸烷基、以脂肪醇為基底之聚氧基伸烷基、及 27 200923039 脂肪醇聚氧基伸烷基烷基醚。若是使用界面活性劑，其 將使用一有效數量，典型的有效數量為一數量，至高為 B-階化前排除溶劑含量之組成物之5重量％。 [0054] 於另一實例中，可將一種潤溼劑包括於組成物 5 中，潤溼劑之選擇係依應用的需求與所使用之可固化樹 脂化學而定。若是使用潤溼劑，將使用一有效數量，典 型的有效數量至高為B-階化前排除溶劑含量之組成物之 5重量％。適合的湖渔劑實例包括：Fluorad FC-4430氣 界面活性劑，可得自3M公司，Clariant Fluowet OTN， ίο BYK W-990，Surfynol 104 界面活性劑，Crompton Silwet L-7280，Triton X100，可得自 Rhom and Haas 公司，具 有一大於240之較佳分子量之丙二醇、Gama-丁醇丙酮、 蓖麻油、甘油、或其他脂肪酸、及矽烷。 [0055] 於另一實例中，可將一種流動調節劑包括於組 15 成物中，流動調節劑之選擇係依應用的需求與所使用之 可固化樹脂化學而定。若是使用流動調節劑，將使用一 有效數量，有效數量為一數量至高為B-階化前排除溶劑 含量之組成物之20重量％。適合的流動調節劑實例包 括：Cab-O-Sil TS720，可得自 Cabot 公司、Aerosil R202 20 或R972，可得自Degussa公司、锻製的二氧化石夕、锻製 的氧化鋁、或煅製的金屬氧化物。 [0056] 於另一實例中，可將一種脫氣劑（消泡劑）加至組 成物，脫氣劑之選擇係依應用的需求與所使用之可固化 樹脂化學而定。若是使用脫氣劑，將使用一有效數量， 28 200923039 典型的f效數量至高為B，化前排除溶劑含量之組成物 之重里％適δ的脫氣劑之實例包括：Antifoam 1400， 可知自 Dow Connng 公司、DuP〇ni M〇d〇fl〇w、及 Βγκ Α-5Ι0。 5 於某些實例巾，這些組絲與增製成配 方，藉以增進黏合性與黏著力，增黏樹脂之實例包括：天 然生成樹脂及經改質的天然生成樹脂、聚萜烯樹脂、經 苯紛改質的搭婦樹脂、香細_節樹脂、腊肪族與芳香族 石油碳氫化合物樹脂、酞酸酯、氫化的碳氫化合物、氫 1〇 化的权g及虱化的松香酯。若是使用增黏樹腊，將使 用-有效數量’典型的有效數量至高為β_階化前排除溶 劑含量之組成物之5重量％。 [0058] 於某些實例中，其他的組份可被包括於組成物 中，例如：稀釋劑，如：液態聚丁烯或聚丙烯、石油蠟， 15 ^丄石蠟與微晶蠟、聚乙烯油脂、氫化的動物、魚、及 蔬菜油脂、礦油與合成蠟、環烷或鏈烷的礦油。 [0059] 其他的添加劑，例如：穩定劑、抗氧化劑、衝 擊性改進劑、與著色劑，於此技藝中所習知之種類及數 量，亦可被加至組成物。 20 [0060]可將常用的溶劑，其具有適當沸點範圍自25〇c 至230°c者，加至組成物，可被使用的適合溶劑實例包 括：酮類、酯類、醇類、醚類、及其他常用的溶劑，其 具穩定性，並可溶解可固化樹脂於組成物中者。適合^ 溶劑包括：7_丁醇丙酮、丙二醇甲基乙基乙 29 200923039 (PGMEA)、甲基乙基酮（MEK)、f苯、乙酸乙酯、及 曱基-2-戍嗣。 [0061]本發明之載體可為任何物體，於其上以組成物 施加-薄層，及其於B—階化成薄膜期間可支承組成物 5者。載體亦可支承薄膜經歷：施加至-待結合的物件、 及/或其他的加工步驟，如：層壓至一晶圓或至一切判 帶。-種特別適合的載體為剝離櫬裏，適合的剝離櫬裏 實例包括：聚醯亞胺(PI)膜、聚萘酸乙烯酉旨卿)膜、^ 聚對酞酸乙烯酯（PET)膜。 1〇 100621組成物被塗覆至載體上，生成一薄且均勻之 層，此組成物隨後被B-階化以產生一層不發黏、均勻的 黏合膜。於本刺之—實财，«舰硬化至-不發 黏的狀態，故使薄膜在施加至基底、晶片、或晶圓前， 可被保存及/或送至另—處所，黏著劑之硬化可使用許多 15 方法予以完成，依所使用的黏著配方而定。 [0063] 於一實例中，組成物包括至少一種液態可固化 樹脂及-種溶劑’於此實例中，黏著劑被硬化至一不發 $或非常低-流動的狀態’藉將組成物充分地加熱以蒸發 溶劑，及部份地固化可固化樹脂或樹脂。 [064] 於另一貝例中，！且成物包含一種溶解於溶劑中 之固態可固化樹脂，於此實例中，黏著劑被硬化至一不 發黏或非常低-流動的狀態’藉將組成物充分地加熱以蒸 發溶劑，留下一不發黏、以樹脂為基底之薄膜。 [0065] 於另一實例中，組成物包含至少一種液態可固 30 200923039 化樹月曰，於此實射，組成物被硬化至— 低流動的狀態，藉將黏著劑充分地加熱以將可二t 部份地推進至-不發黏或非常低流動的狀態。"曰 [0066]精於此方面技藝者會察知：組成物亦可包[0053] In another example, a surfactant may be added to the composition. Suitable surfactants include: anthrone, polyethylene glycol, polyoxyethylene/polyoxypropyl propyl block copolymer. a polyoxyalkylene/polyoxypropyl propyl block copolymer based on ethylenediamine, a polyoxyalkylene group based on a polyol, a polyoxyalkylene group based on a fatty alcohol, and 27 200923039 A fatty alcohol polyoxyalkylene alkyl ether. If a surfactant is used, it will be used in an effective amount, typically an effective amount, up to 5% by weight of the composition excluding the solvent content prior to B-staged. In another example, a wetting agent can be included in the composition 5, the choice of wetting agent depending on the needs of the application and the curable resin chemistry used. If a wetting agent is used, an effective amount will be used, typically an effective amount up to 5% by weight of the composition excluding the solvent content prior to B-staged. Examples of suitable lake fishing agents include: Fluorad FC-4430 Air Surfactant available from 3M Company, Clariant Fluowet OTN, ίο BYK W-990, Surfynol 104 Surfactant, Crompton Silwet L-7280, Triton X100, available From Rhom and Haas, there is a preferred molecular weight of propylene glycol, Gama-butanol acetone, castor oil, glycerin, or other fatty acids, and decane. In another example, a flow regulator can be included in the group, and the flow regulator can be selected depending on the needs of the application and the chemistry of the curable resin used. If a flow regulator is used, an effective amount will be used, the effective amount being a quantity up to 20% by weight of the composition excluding the solvent content prior to B-staged. Examples of suitable flow regulators include: Cab-O-Sil TS720, available from Cabot Corporation, Aerosil R202 20 or R972, available from Degussa, forged sulphur dioxide, forged alumina, or forging Metal oxides. [0056] In another example, a deaerator (antifoam) can be added to the composition, the deaerator being selected depending on the needs of the application and the chemistry of the curable resin used. If a deaerator is used, an effective amount will be used, 28 200923039 typical f-effect quantity up to B, and examples of the degassing agent having a weight percentage of the composition excluding the solvent content before the formation include: Antifoam 1400, known from Dow Connng Company, DuP〇ni M〇d〇fl〇w, and Βγκ Α-5Ι0. 5 In some case towels, these filaments are formulated to enhance adhesion and adhesion. Examples of tackifying resins include: naturally occurring resins and modified naturally occurring resins, polyterpene resins, and benzene. The modified maternal resin, the fragrant resin, the wax-based aliphatic and aromatic petroleum hydrocarbon resin, the phthalic acid ester, the hydrogenated hydrocarbon, the hydrogen hydrazine, and the deuterated rosin ester. If a viscosified wax is used, a typical effective amount of - effective amount will be used up to 5% by weight of the composition excluding the solvent content before the beta_stage. [0058] In some examples, other components may be included in the composition, such as: diluents, such as: liquid polybutene or polypropylene, petroleum wax, 15 ^ fluoran wax and microcrystalline wax, polyethylene Oils and fats, hydrogenated animal, fish, and vegetable oils, mineral oils and mineral oils of synthetic waxes, naphthenes or alkanes. Other additives such as stabilizers, antioxidants, impact modifiers, and color formers, as well known in the art, may be added to the composition. 20 [0060] A commonly used solvent having a suitable boiling point range from 25 ° C to 230 ° C may be added to the composition. Examples of suitable solvents that may be used include: ketones, esters, alcohols, ethers And other commonly used solvents which are stable and which dissolve the curable resin in the composition. Suitable solvents include: 7-butanol acetone, propylene glycol methyl ethyl b 29 200923039 (PGMEA), methyl ethyl ketone (MEK), f benzene, ethyl acetate, and mercapto-2-indole. The carrier of the present invention may be any object on which a thin layer is applied as a composition, and which can support the composition 5 during B-stage formation into a film. The carrier may also support the film undergoing: application to the article to be bonded, and/or other processing steps such as lamination to a wafer or to any tape. A particularly suitable carrier is a release liner, and examples of suitable release liners include: a polyimide film (PI) film, a polyethylene naphthalate film, a polyethylene terephthalate (PET) film. A composition of 100 〇 100621 is applied to the support to form a thin and uniform layer which is then B-staged to produce a non-tacky, uniform bond film. In this thorn - real money, «the ship hardens to - not sticky state, so that the film can be preserved and / or sent to another place before the application to the substrate, wafer, or wafer, the hardening of the adhesive This can be done using a number of 15 methods, depending on the adhesive formulation used. [0063] In one example, the composition includes at least one liquid curable resin and a solvent. In this example, the adhesive is hardened to a state of no or very low-flowing. Heating to evaporate the solvent and partially cure the curable resin or resin. [064] In another example,! And the composition comprises a solid curable resin dissolved in a solvent, in this example, the adhesive is hardened to a non-tacky or very low-flowing state 'by sufficiently heating the composition to evaporate the solvent, leaving A non-stick, resin-based film. [0065] In another example, the composition comprises at least one liquid curable 30 200923039 eucalyptus, where the composition is hardened to a low flow state, and the adhesive is sufficiently heated to be The two t are partially advanced to a state that is not sticky or very low flow. "曰 [0066] Skilled in this area will know that the composition can also be packaged

種可固化樹脂與增㈣合物之併合物，其可被乾燥、B 階化、及使用諸卿之組合Μ固化。例如：此配方可 被Β-階化’經由使用紫外線輻射，及於黏日日日後之 製造步驟t’藉使用熱予簡化。此配方亦可包含冬 10 15 可固化樹脂及/—聚合物之併合物，其具有二個不同 的固化溫度’而使黏著劑可藉加熱組成物，於第 低)溫度下被硬化’導致第—種可固化樹脂或增動聚合物 固化，及整體黏著配方硬化至—不發黏的狀態。於此案 例中，第二種可固化樹脂或增韌聚合物，其具有第二個^ 及較高的©化溫度’可於黏晶後之—後續操作 固化。 [0067] B-階化溫度通常為於6(TC至20(TC之範圍内， 及B-階化會於自1》魅2 4、時範圍之期間内具有效 果，依所選擇的特殊可固化樹脂配方而定。對於每種组 成物，其B-階化之時間與溫度量變曲線會改變，不同的 組成物可予設計，藉以提供可適合特殊工業製造程序之 B-階化量變曲線。 [0068] 依本發明之薄膜黏著劑可被用於將任何二種依 隨物結合在一起，而且對於在後續的熱處理期間，如： 固化及引線接合操作，將半導體晶片結合至一具有低孔 31 20 200923039 底者4寸別地適合。半導體晶片可為任何類型、尺寸、 2 #丄八對本發明不具關鍵性。組裝物的結合線（固化 後黏著劑之厚度）可為適合特殊半導體封裳之任意厚 度，典型地為介於5與15G微米間之範圍。 5 [:9]晶#被、结合至其上的基底，可為任何特殊封裝 所，者’包括，但非限制性：有機物、玻璃、金屬、及 陶益。低孔洞性能於使用有機物基底之應用中特別有 利’因為於封裝操作時，有機物基底傾向最易於生成孔 同由於^領向於至溫下吸收水分，及於熱操作期間釋 10 出此水分。適合的有機物基底之實例包括硬質或半硬質 基底主要4自習知的樹脂材料，包括，但非限制性：二 馬來fe亞胺二嗪(BT)樹脂、環氧樹脂、及FR_4板。 [0070] “低孔洞性能已於晶片/薄膜/基底組裝之熱處理 期間被觀祭到’熱處理可包括固化及引線接合操作。非 15 新11的薄膜傾向於在結合線中產生孔洞，然而依本發明 之薄膜’其包含孔洞減少化合物，於下游的熱操作期間 較不容易產生顯著的孔洞。 [0071] 此減少孔洞之方法於成束晶圓背侧層壓（BWbl) 程序中特別有用，於此程序中，依照本發明方法製得之 20 黏合膜被層壓至切割帶，使生成BWBL膜。將剝離襯裡 自BWBL之黏合側移除，使黏合側接觸一半導體晶圓。 BWBL膜隨後被層壓至半導體晶圓，導致黏合膜被失在 切告彳帶與半導體晶圓之間，有關BWBL膜在層壓至半導 體晶圓之前與之後的圖式表述顯示於圖丨中。晶圓隨後 32 10 15 20 200923039 的晶片’黏合膜仍然依附於其上，切割帶 切割帶取% 種^^。隨後將個別的晶片自 曰 ' 土底，典型地使用楝起-與-放置之 備。於此步驟期間’黏合膜自切割帶剝離， 接捫=附於晶片上。將加晶片薄膜之黏合側與基底 =觸’_及/_力使㈣劍達成結合半導體晶片至基 Γ 底之組裝隨後經歷至少-種項熱操作， =表述顯示於圖…獲得之組裂於接二； 相!於製自—種非新穎性薄膜，其未包 中存在：?丨::：乂化合物者’之類似組裝。於薄膜黏著劑 德接^ 化合物，可避免於熱加工操作，如：引 ，水接5及固化時，生成大量的孔洞。 中所使用之切料可為—種«黏著 ▼或為一種紫外線(uv)_可固化切㈣，典型 載；膜？ϊ:70至u〇微米厚的聚烯烴或聚氯乙烯(ρν〇 厚度為3至30微米之黏著劑層，精於此 蟄者雷祭知··可選擇使用具有不同構型的帶子， 以適合特殊的工業程序。 陶3]固化之達成可為一個別的操作步驟，或盥另一 if!’如：迴焊或引線接合’-同進行。無需過度 =⑽行者即可選擇固化條件，以適合組成物中特殊 =可固化樹脂及增動聚合物化學，於—實例中，薄膜於 自80。至2〇〇t之溫度範圍下固化工至5小時。 、、 33 200923039 [0074] 依本發明之薄膜於基底上顯示非常良好的浸潤 性，此性能提升使用薄膜作為一種黏著劑，典型地可藉 ’丁、接於黏aa便，觀祭接合線中存在的孔洞數目。孔洞少 於^片表面積5 %者被認為具有良好的浸潤性能，一種對 5於薄膜浸!性之主要預測為其於黏晶溫度下之熔體黏 度，於—實例中，低孔洞薄膜之熔體黏度，於100。至150 c之溫度範圍下為介於500與1〇,〇〇〇泊之間。 【實施方式】 1〇 實例 [0075] 對於此處所包含之每個實例，樣品之製備及評 鑑依照下列程序：將—種孔洞減少化合物及用於此化合 物之固，劑加至各實例中所明示之各種配方中，並予混 。、。獲彳于之組成物隨後被塗覆於一經矽酮塗覆之聚酯剝 15 離襯裡上，爾後將剝離襯裡上之組成物於100 下B- 階化^分鐘，以使组成物轉變成一具有最終厚度約2〇 Μ米之薄臈。緊接著，薄膜的暴露侧於室溫下被層壓成 切告！If。隨後自薄膜移除剝離襯裡，並將薄膜/切割帶 結構層塵成-玻璃晶圓，致使薄膜被安置於切割帶與晶 圓之門合並且同a守黏附於二者’而後晶圓被切割成個別 的笔米X ίο毫米晶片。將加黏著劑之晶片自切割帶 取下’亦即：將黏合膜自㈣帶剝離，但仍黏附於玻璃 晶片。隨後將附著薄膜的晶片，於12〇。〇與5公斤力之 下’與-BT基底接觸5秒鐘，以使接合線中薄膜之孔洞 34 200923039 性能在各項熱操作後可被容易地觀察。樣品而後被安置 於熱條件下，模擬於黏晶後之半導體封裝時可能經歷的 不同固化與引線接合操作。經由目視玻璃晶片檢查每個 樣品之接合線，並緊接於黏晶後，及亦於每項熱操作後， 5 估計每個的孔洞百分率，藉以評鑑浸潤性能。將各項熱 程序後新穎樣品之孔洞百分率與可相比擬樣品的孔洞百 分率相比較，以決定於每個案例中孔洞減少化合物之功 效。 [0076] 實例1。於CTBN增韌聚合物/環氧可固化樹脂 10 系統令之孔洞減少化合物 [0077] 將各種孔洞減少化合物於一以CTBN與環氧樹 脂為基底之系統中予以測試，所測試之孔洞減少化合物 列示於下列之表1中。 表1 :於CTBN增韌聚合物/環氧可固化樹脂系統中測試之孔洞減少化合 物 VRC-1 曱基丙烯基氧基丙基三（三曱 基石夕氧基)梦烧 VRC-2 乙烯基封端之聚二甲基矽氧 烷，經減少揮發性，5000厘泊 ch3 /ch3 \ch3 HaC=CH-S丨 ί—0卜丨卜〇|di-CH;CH2 6h3 \CHa/niH3 VRC-3 乙烯基封端之(15-17%二苯基 矽氧烷)-二曱基矽氧烷共聚 物，10,000厘泊 CH3 /ch3 \l^ j CH3 H2C=CH-S'i—OrSi—〇H—Si—〇rStCH=CH2 ch3 \ch3 Δ X j ch3 \U /n 35 200923039 VRC-4 VRC-5 VRC-6 環氧基丙氧基丙基封端之聚 二甲基矽氧烷，100-140厘泊 環氧基丙氧基丙基封端之聚 二曱基矽氧烷’ 20-35厘泊 (0.8-1.2%乙烯基节基矽氧烷)_ 二曱基矽氧烷共聚物，端基為 三甲基矽氧基，800-1，2〇〇厘 泊A combination of a curable resin and a stilbene compound, which can be dried, B-staged, and cured using a combination of bismuth. For example, this formulation can be simplified by the use of ultraviolet radiation, and by the use of heat at the manufacturing step t' after the day. The formulation may also comprise a combination of winter 10 15 curable resin and/or polymer having two different curing temperatures' such that the adhesive can be hardened at a lower temperature by heating the composition' - Curing of a curable resin or an actuating polymer, and curing of the overall adhesive formulation to a state of no stickiness. In this case, a second curable resin or toughening polymer having a second and a higher chemical temperature can be cured after subsequent processing. [0067] The B-staged temperature is usually in the range of 6 (TC to 20 (the range of TC, and the B-stage will be in the range of 1) and the time range, depending on the particular selected Depending on the formulation of the cured resin, the B-staged time and temperature profile will change for each composition, and different compositions can be designed to provide a B-staged quantitative curve that can be adapted to a particular industrial manufacturing process. The film adhesive according to the present invention can be used to bond any two substrates together, and for bonding semiconductor wafers to a low hole during subsequent heat treatment, such as curing and wire bonding operations. 31 20 200923039 The bottom is suitable for 4 inches. The semiconductor wafer can be any type, size, 2 #丄8 is not critical to the invention. The bonding line of the assembly (the thickness of the adhesive after curing) can be suitable for special semiconductor sealing Any thickness, typically between 5 and 15 Gm. 5 [:9] crystal #, the substrate to which it is bonded, can be any special package, including, but not limited to: organic matter , glass, metal, Tao Yi. Low hole performance is particularly advantageous in applications using organic substrates. 'Because during the packaging operation, the organic substrate tends to be the easiest to form pores, and absorbs moisture from the neck to the temperature, and releases it during thermal operation. Moisture. Examples of suitable organic substrates include hard or semi-rigid substrates, primarily including conventional resin materials including, but not limited to, dimaleimide diazine (BT) resins, epoxy resins, and FR-4 plates. [0070] "Low-hole properties have been observed during heat treatment of wafer/film/substrate assembly. 'The heat treatment can include curing and wire bonding operations. Non-15 new 11 films tend to create holes in the bond line, however The inventive film, which comprises a void reducing compound, is less prone to produce significant voids during downstream thermal operations. [0071] This method of reducing voids is particularly useful in bundled wafer backside lamination (BWbl) procedures, In this procedure, the 20-adhesive film produced in accordance with the method of the present invention is laminated to a dicing tape to form a BWBL film. The release liner is removed from the bonded side of the BWBL for bonding. Contacting a semiconductor wafer. The BWBL film is then laminated to the semiconductor wafer, causing the adhesive film to be lost between the tape and the semiconductor wafer, before and after lamination of the BWBL film to the semiconductor wafer. The representation is shown in Figure 。. The wafer then 32 10 15 20 200923039 of the wafer 'adhesive film still attached to it, the dicing tape cuts the tape to take a variety of ^ ^. Then the individual wafers are self-proclaimed 'soil, typically used Pick-up-and-placement. During this step, the adhesive film is peeled off from the dicing tape, and the 扪 = attached to the wafer. The bonding side of the wafer film is bonded to the substrate = touch _ and / _ force makes (four) sword reach The assembly of the bonded semiconductor wafer to the substrate is then subjected to at least a series of thermal operations, the expression is shown in Figure 2. The obtained group is split into two; the phase is produced from a non-new film which is not present in the package: ?丨:::A similar assembly of the compound of the compound. In the case of film adhesives, it can avoid the formation of a large number of holes during hot working operations such as: introduction, water connection and curing. The cut material used in the test can be - type «adhesive ▼ or an ultraviolet (uv) _ curable cut (four), typical load; film? ϊ: 70 to u 〇 micron thick polyolefin or polyvinyl chloride (ρν 〇 thickness of 3 to 30 microns of adhesive layer, fine in this 蛰 雷 祭 · · · 可选择 可选择 可选择 可选择 可选择 可选择 可选择 可选择 可选择 可选择 可选择Suitable for special industrial procedures. Ceramic 3] curing can be achieved by a different operation step, or by another if! 'such as: reflow or wire bonding' - the same can be done without excessive = (10) line can choose curing conditions, In the composition of the special = curable resin and activator chemistry, in the example, the film is cured from a temperature range of 80 to 2 〇〇t to 5 hours.,, 33 200923039 [0074] The film of the present invention exhibits very good wettability on a substrate, and this performance is improved by using a film as an adhesive, which can be typically used to bond the adhesive to the abalone, and to observe the number of holes present in the bonding wire. The surface area of 5% is considered to have good wettability, and the main prediction of the film immersion property is the melt viscosity at the die temperature. In the example, the melt viscosity of the low-porosity film, At temperatures ranging from 100 to 150 c Between 500 and 1 〇, between the anchors. [Embodiment] 1 〇 Example [0075] For each of the examples included herein, the preparation and evaluation of the sample is in accordance with the following procedure: And the solidifying agent for the compound is added to various formulations as exemplified in the respective examples, and is premixed. The obtained composition is then coated on an oxime-coated polyester peeling 15 lining. Thereafter, the composition on the release liner is B-staged at 100 minutes to convert the composition into a thin crucible having a final thickness of about 2 mm. Then, the exposed side of the film is exposed at room temperature. Lamination into a cut! If the stripping liner is removed from the film and the film/dicing tape structure is dusted into a glass wafer, so that the film is placed on the dicing tape and the wafer is bonded to the wafer. Both' and then the wafer is cut into individual pen-meter X ίο mm wafers. The adhesive-added wafer is removed from the dicing tape', ie the adhesive film is peeled off from the (four) tape, but still adheres to the glass wafer. Film attached to the film, at 12 〇. 〇 and 5 kg force The lower 'contact with the -BT substrate for 5 seconds to make the film hole 34 in the bonding wire 200923039 performance can be easily observed after various thermal operations. The sample is then placed under thermal conditions to simulate the semiconductor after the die bonding Different curing and wire bonding operations that may be experienced during packaging. Check the bond lines of each sample via a visual glass wafer, and immediately after the die bonding, and after each thermal operation, 5 estimate the percentage of each hole, thereby The infiltration performance was evaluated. The percentage of the pores of the novel sample after each heat program was compared with the percentage of the hole of the comparable sample to determine the effect of the hole-reducing compound in each case. [0076] Example 1. Toughening to CTBN Polymer/Epoxy Curable Resin 10 System to Reduce Holes Compounds [0077] Various void reduction compounds were tested in a CTBN and epoxy based system. The tested void reduction compounds are listed below. in FIG. 1. Table 1: Cavity Reduction Compounds Tested in CTBN Toughened Polymer/Epoxy Curable Resin Systems VRC-1 Mercaptopropenyloxypropyl Tris(tridecylphosphinyloxy) Dream Burning VRC-2 Vinyl Seal Polydimethyl oxane at the end, reduced volatility, 5000 cps ch3 /ch3 \ch3 HaC=CH-S丨ί—0 Buddhism|di-CH; CH2 6h3 \CHa/niH3 VRC-3 Vinyl terminated (15-17% diphenyloxane)-dimercaptodecane copolymer, 10,000 cps CH3 /ch3 \l^ j CH3 H2C=CH-S'i-OrSi-〇H —Si—〇rStCH=CH2 ch3 \ch3 Δ X j ch3 \U /n 35 200923039 VRC-4 VRC-5 VRC-6 Epoxypropoxypropyl-terminated polydimethyloxane, 100- 140 centipoise of epoxy-propoxypropyl-terminated polydidecyloxyl' 20-35 centipoise (0.8-1.2% vinyl sulfoxane) _ dimercapto phthalate copolymer, The terminal group is trimethyl decyloxy, 800-1, 2 〇〇 centipoise

[0078]以CTBN與環氧樹脂為基底 於下列表2巾之組成物製得。CQmp ^係使用顯示 B至H為新穎的樣品B至H，VRC為孔匕較實例A’Inv 所記錄的組成物不包括溶劑，於製備：減少化合物， 加入50%曱基乙基甲_ (MEK)溶 辅 時，大約 a祠助塗覆。 表2 :以 於Γ量 合物^細之配方， 組份 —--- Comp A Inv B InvC Inv D Inv E Inv F Inv G Inv H 2Ι5Ν增韌聚合物 65 60 64 64 64 64 65 65 甲酚酚醛清漆環氧 [固化樹脂 25 26 22 22 22 22 22 22 芝芝二胺硬化劑 胺催化劑，重量％ 圓— .」 5 5 5 5 5 5 5 5 0.5 ———- 0.5 0.5 0.5 0.5 0.5 0.5 0.5 36 200923039[0078] The composition of the following Table 2 was prepared using CTBN and epoxy resin as the substrate. CQmp ^ uses the samples B to H which are novel samples B to H, VRC is the pores. The composition recorded by the example A'Inv does not include the solvent. Preparation: Reduce the compound, add 50% mercaptoethyl group ( MEK) When it is dissolved, it is about a coating. Table 2: Formulations for ruthenium complexes, components—Comp A Inv B InvC Inv D Inv E Inv F Inv G Inv H 2Ι5Ν Toughened Polymer 65 60 64 64 64 64 65 65 Cresol Novolac epoxy [curing resin 25 26 22 22 22 22 22 22 Chitosan diamine hardener amine catalyst, wt% circle - . 5 5 5 5 5 5 5 5 0.5 ———- 0.5 0.5 0.5 0.5 0.5 0.5 0.5 36 200923039

[0079]經歷模擬4 時間與溫度條件下^日、固化、及引線接合等熱操作之 的表3中。於所有资這些配方的孔洞數據顯示於下列 5[0079] It is subjected to the thermal operation of simulating 4 time and temperature conditions, heat treatment, and wire bonding. The hole data for all of these formulations are shown below.

°C下屛B* to、八拉$例中’ ？！線接合模擬之進行係於175 下h1G分鐘’那些未被評鑑之組合則™，，顯示。°C to B* to, eight pull $ in the case'? ! The line bonding simulation was performed at 175 h1G minutes, and those combinations that were not evaluated were TM, displayed.

主0 --------- s、s一 受熱條件 環氧可固化樹脂系統之簿膜之礼洞百合柰 及操作 Comp A Inv B Inv C Inv D Inv E Inv F Inv G InvH 1小時於 120°C —-~~-— 黏晶 <5% N/A N/A N/A N/A N/A N/A N/A 固化 <5% <5% <5% N/A N/A N/A N/A N/A 引線接合 80% <5% <5% N/A N/A N/A N/A N/A 2小時於 120°C 黏晶 <5% <5% <5% N/A N/A N/A N/A N/A 固化 <5% <5% <5% N/A N/A N/A N/A N/A 引線接合 <5% 」 <5% <5% N/A N/A N/A N/A N/A 3〇分鐘 黏晶 ---—— <5% <5% <5% N/A N/A N/A N/A N/A 37 200923039Main 0 --------- s, s a heated condition epoxy curable resin system film of the hole Lily and operation Comp A Inv B Inv C Inv D Inv E Inv F Inv G InvH 1 hour At 120 °C —-~~-—stick crystal <5% N/AN/AN/AN/AN/AN/AN/A curing <5% <5% <5% N/AN/AN/ AN/AN/A wire bonding 80% <5% < 5% N/AN/AN/AN/AN/A 2 hours at 120 ° C Sticky crystal < 5% < 5% < 5% N/ AN/AN/AN/AN/A Curing <5% <5% <5% N/AN/AN/AN/AN/A Wire Bonding <5% <5% <5% <5% N/ AN/AN/AN/AN/A 3 minute minute crystal---- <5% <5% <5% N/AN/AN/AN/AN/A 37 200923039

於 100〇C 固化 80% <5% <5% N/A N/A N/A N/A N/A + 30分鐘 於 15CTC 引線接合 80% <5% <5% N/A N/A N/A N/A N/A 30分鐘 黏晶 <5% <5% <5% <5% <5% <5% <5% <5% 於 100°C 固化 <5% <5% <5% <5% 10% <5% <5% <5% 十 30分鐘 於 125°C 引線接合 30% <5% <5% <5% 10% <5% <5% <5% 30分鐘 黏晶 <5% <5% <5% N/A N/A N/A N/A N/A 於 120°C 固化 80% <5% <5% N/A N/A N/A N/A N/A 十 30分鐘 於 150°C 引線接合 80% <5% <5% N/A N/A N/A N/A N/A 黏晶 <5% <5% <5% N/A N/A N/A N/A N/A 無 固化 N/A N/A N/A N/A N/A N/A N/A N/A 引線接合 80% 30% 30% N/A N/A N/A N/A N/ACuring 80% <5% <5% N/AN/AN/AN/AN/A + 30 minutes at 15 CTC wire bonding 80% < 5% < 5% N/AN/AN/AN /AN/A 30 minutes sticky crystal <5% <5% <5% <5% <5% <5% <5% <5% <5% cured at 100 °C <5% <;5%<5%<5%<5% 10% <5% <5% <5% < 5% Ten 30 minutes at 125°C Wire bonding 30% <5% <5% <5% <5% 10% <5% <5% < 5% 30 mins of viscous crystal <5% < 5% < 5% N/AN/AN/AN/AN/A Cured at 120 ° C 80% < 5% <5% N/AN/AN/AN/AN/A Ten 30 minutes at 150 ° C Wire bonding 80% < 5% < 5% N/AN/AN/AN/AN/A viscous crystal <5 % <5% <5% N/AN/AN/AN/AN/A No cure N/AN/AN/AN/AN/AN/AN/AN/A Wire bonding 80% 30% 30% N/AN /AN/AN/AN/A

[0080] 幾乎所有被測試的固化量變曲線皆顯示：經固 化及/或引線接合後，比較薄膜具有高孔洞（30-80%)，相 反地，經這些熱操作後，所有的新穎薄膜具有低孔洞 (5-10%)。關於此之例外則見諸於2小時於120°C之固化 量變曲線，其中經黏晶、固化、及引線接合之模擬後， 甚至於比較實例亦具有非常低的孔洞，此乃因為於低溫 下非常長的固化時間可使基底中之水分消散，而未造成 如較高溫度下使用較短時間量變曲線所見之嚴重孔洞， 然而由於此長固化時間不利於製造速度，於工業運作中 38 10 200923039 不為所欲。 [0081] 實例2。於矽氧烷增韌聚合物/環氧可固化樹脂 系統中之孔洞減少化合物 [0082] 於以環氧樹脂與環氧基-矽氧烷丙烯酸增韌聚 5 合物為基底之系統中，測試一種孔洞減少化合物，一種 不含孔洞減少化合物之類似的比較薄膜，亦予製備及測 試，於此實例中被測試的孔洞減少化合物為曱基丙烯基 氧基丙基三（三曱基矽氧基）矽烷（於實例1中以VRC-1表 示）。 10 [0083] 以環氧基-矽氧烷丙烯酸增韌聚合物與環氧樹 脂為基底之配方係使用顯示於表4中之組成物製得，這 些組成物未包括溶劑，大約加入50%甲基乙基曱酮（MEK) 溶劑藉以辅助塗覆，以製得測試樣品。 表4 :以矽氧烷增韌聚合物/環氧可固化樹脂系統為基底之薄膜之配 方，於重量百分率 Comp I Inv J 矽氧烷增韌聚合物 65 60 曱酚酚醛清漆環氧基可固化樹脂 25 23 芳族二胺硬化劑 5 5 胺催化劑 0.5 0.5 矽烷黏著促進劑 1.5 1 煅製二氧化矽填料 3 2 過氧化物固化劑 0 2.5 VRC-1 0 6 39 15 200923039 [0084]經黏晶（D/A)、固斗描Λ、 。 、 U化杈梃（30分鐘於l〇(TC+30分 鐘於125°C)、及引線接人煊、 。 八役0衩擬（1〇分鐘於175。〇後，這 些配方的孔洞數據顯示於下列的表5中。 15 :製自魏麟㈣氧可固化樹脂系統之簿膜之孔洞百分率 受熱條件及操作 Comp I Inv J 30分鐘於100°C 黏晶 <5% <5% + 固化 <5% <5% 30分鐘於125°C 引線接合 30% <5% |〇〇85]於此實例中，相較於不含孔洞減少化合物之比較 薄膜，包含孔洞減少化合物之薄膜於引線接合後具有較 少的孔洞。 _6]實例3。於CTBN增韌聚合物/二馬來醯亞胺可 固化樹脂系統中之孔洞減少化合物 [0087]將一種孔洞減少化合物於一以二馬來醯亞胺可 固化樹脂與CTBN增韌聚合物為基底之系統中予以測 試，於此實例中所測試之孔洞減少化合物為甲基丙烯基 氧基丙基t-結構石夕氧烧，10-20厘泊，其將被稱為vrc_7, 及具有下列結構： ~ ’[0080] Almost all of the tested cure curves show that after curing and/or wire bonding, the comparative film has high porosity (30-80%), and conversely, after these thermal operations, all of the novel films have low Hole (5-10%). The exceptions to this are seen in the cure curve for 2 hours at 120 ° C, where after the simulation of die bonding, curing, and wire bonding, even the comparative examples have very low porosity, because at low temperatures Very long curing times allow the moisture in the substrate to dissipate without causing severe pores as seen at higher temperatures using shorter time-varying curves, however, this long cure time is not conducive to manufacturing speed, in industrial operation 38 10 200923039 Not doing what you want. Example 2. Hole reduction compound in a siloxane attenuating polymer/epoxy curable resin system [0082] Tested in a system based on an epoxy resin and an epoxy-oxyalkylene acrylate toughening polymer A pore-reducing compound, a similar comparative film containing no void-reducing compound, was also prepared and tested. The void-reducing compound tested in this example was mercaptopropenyloxypropyltris(tridecyloxyl). Oxane (represented by VRC-1 in Example 1). 10 [0083] A formulation based on an epoxy-methoxy siloxane acrylic toughening polymer and an epoxy resin was prepared using the compositions shown in Table 4, which did not include a solvent, and was added to about 50%. The ethyl ethyl fluorenone (MEK) solvent is used to aid coating to produce a test sample. Table 4: Formulation of a film based on a siloxane attenuating polymer/epoxy curable resin system, in weight percent Comp I Inv J siloxane attenuating polymer 65 60 phenolic phenolic varnish epoxy curing Resin 25 23 aromatic diamine hardener 5 5 amine catalyst 0.5 0.5 decane adhesion promoter 1.5 1 fumed cerium oxide filler 3 2 peroxide curing agent 0 2.5 VRC-1 0 6 39 15 200923039 [0084] (D/A), solid bucket description, . U 杈梃 30 (30 minutes in l〇 (TC + 30 minutes at 125 ° C), and the lead is connected to the 煊, 八 衩 0 衩 ( (1 于 in 175. 〇, the hole data of these formulations show In Table 5 below. 15 : Percentage of voids in the film of Wei Lin (4) Oxygen curable resin system. Heating conditions and operation Comp I Inv J 30 min at 100 ° C. Bonding crystal 5% < 5% + Curing <5% < 5% 30 min at 125 ° C wire bonding 30% < 5% | 〇〇 85] In this example, compared to a comparative film containing no void reducing compound, including a void reducing compound The film has fewer holes after wire bonding. _6] Example 3. Hole reduction compound in CTBN toughening polymer / bismaleimide curable resin system [0087] A hole reduction compound is used in one The system in which the maleidanilide curable resin and the CTBN toughening polymer are used as the substrate is tested. The pore reducing compound tested in this example is methacryloxypropyl t-structure Shihei, 10 -20 centipoise, which will be called vrc_7, and has the following structure: ~ '

40 200923039 [0088] 以CTBN與二馬來醯亞胺為基底之配方係使用 顯示於下列表6中之組成物製得，此組成物未包括溶劑’ 於製備測試樣品時，大約加入50%甲基乙基甲酮（MEK) 溶劑藉以辅助塗覆。 表6:以CTBN增韌聚合物/二馬來醯亞胺可固化樹脂系統為基底之薄膜 之配方，於重量百分率 InvK CTBN增韌聚合物 76 二馬來醯亞胺可固化樹脂 16 矽烷黏著促進劑 1 煅製二氧化矽填料 2 過氧化物固化劑 _______ 2 VRC-7 ____3 [0089]經黏晶（D/A)、固化模擬（30分鐘於1〇(rc+3〇分 鐘於125C)、及引線接合模擬（10分鐘於後，此 配方的孔洞數據顯示於下列的表7中。 表7 ·製自CTBN _聚合物/二馬來輕胺可jg化樹脂系統 之孔 洞百分率 ' 受熱條件及操作 Inv K 30分鐘於100°C + 30分鐘於125°C 黏晶 —<5% 固化 --- <5% 引線接合 —~---__ 、J /〇 41 200923039 [0090] 於此實例中，包含孔洞減少化合物之薄膜於黏 晶、固化、及引線接合模擬後具有微不足道的孔洞。 [0091] 那些精於此方面技藝者明顯可知：在不偏離本 發明之精義與範疇下，可對其進行許多修飾及改變，於 5 此所述之特殊實例僅為藉實例予以出示，本發明僅受依 附的申請專利範圍條款所限制，連同這些申請專利範圍 所賦予的所有等同範疇。 【圖式簡單說明】 ίο [0009] 藉閱讀下列詳述並參考隨附之圖，本發明可被 更完全地明瞭，其中： 圖1為層壓至半導體晶圓之前與之後的成束晶圓背側層 壓（BWBL)膜之圖式表示，及 圖2為BWBL組裝程序之圖式表示。 15 【主要元件符號說明】 4240 200923039 [0088] The formulation based on CTBN and bismaleimide was prepared using the composition shown in Table 6 below, which composition did not include the solvent'. When preparing the test sample, approximately 50% was added. The ethyl ethyl ketone (MEK) solvent is used to aid in coating. Table 6: Formulation of a film based on CTBN toughening polymer/dammaride imidable resin system, in weight percent InvK CTBN toughening polymer 76 Bismaleimide curable resin 16 decane adhesion promotion Agent 1 Fused cerium oxide filler 2 Peroxide curing agent _______ 2 VRC-7 ____3 [0089] Transgranular (D/A), curing simulation (30 minutes at 1 〇 (rc + 3 〇 minutes at 125 C) And wire bonding simulations (after 10 minutes, the hole data for this formulation is shown in Table 7 below. Table 7 - Percentage of Holes from CTBN_Polymer/Bismalesamine Jg Resin System' Heating Conditions And operating Inv K for 30 minutes at 100 ° C + 30 minutes at 125 ° C die-- 5% curing --- < 5% wire bonding —~---__, J /〇41 200923039 [0090] In this example, the film comprising the void-reducing compound has negligible pores after the die-bonding, curing, and wire bonding simulations. [0091] Those skilled in the art will clearly recognize that, without departing from the spirit and scope of the present invention, Many modifications and changes can be made to it. The examples are given by way of example only, and the present invention is limited only by the scope of the attached patent application, and all equivalents of the scope of the patent application. [Simple description of the drawings] ίο [0009] By reading the following detailed description and reference BRIEF DESCRIPTION OF THE DRAWINGS The present invention will be more fully apparent, in which: Figure 1 is a schematic representation of a bundled wafer backside laminate (BWBL) film before and after lamination to a semiconductor wafer, and Figure 2 is Schematic representation of the BWBL assembly program. 15 [Key component symbol description] 42

Claims (1)

200923039200923039 申請專利範圍： 5 2. 10 3. 4. 15 =種黏合膜，製自一種組成物，其包括：⑴一種增韌 =合物' (ii)一種可固化樹脂、（出）一種用於可固化樹 ，之固化劑、（iv)—種具有至少二個彼此毗連的矽_氧 部份及至少一個反應性官能之孔洞減少化合物、及（V) 種用於孔洞減少化合物之固化劑。 根據申凊專利範圍第1項之黏合膜，其中反應性官能 為選自群組包括：乙烯基、羥基、羧基、環氧基、丙 ~以曰曰、甲基丙稀酸醋、及這些之組合。 根據申請專利範圍第丨項之黏合膜，其中可固化樹脂 為選自群組包括：二馬來醯亞胺及環氧樹脂。 根據申請專利範圍第1項之黏合膜，其中增韌聚合物 為選自群組包括：CTBN橡膠、及一種聚合物，其包 括主幹，及自主幹垂掛至少一個石夕氧烧部份與至少 —個能夠反應生成新共價鍵之反應性部份。 5. 化 根據申請專利範圍第1項之黏著劑，其中孔洞減少 合物為選自群組包括：Patent application scope: 5 2. 10 3. 4. 15 = a kind of adhesive film, made of a composition, including: (1) a toughened = compound ' (ii) a curable resin, (one) for A curing tree, a curing agent, (iv) a hole reducing compound having at least two 矽-oxygen moieties adjacent to each other and at least one reactive functional group, and (V) a curing agent for the void reducing compound. The adhesive film according to claim 1, wherein the reactive functional group is selected from the group consisting of: a vinyl group, a hydroxyl group, a carboxyl group, an epoxy group, a propylene group, a aceton group, a methyl acrylate vinegar, and the like. combination. The adhesive film according to the invention of claim 3, wherein the curable resin is selected from the group consisting of: bismaleimide and epoxy resin. The adhesive film according to claim 1, wherein the toughening polymer is selected from the group consisting of: CTBN rubber, and a polymer comprising a trunk, and an autonomous dry hanging at least one part of the oxywatts and at least— A reactive moiety capable of reacting to form a new covalent bond. 5. The adhesive according to claim 1, wherein the void reducing compound is selected from the group consisting of: 43 200923039 及這些之組合。 6. 一種將用於半導體封裝 其包括： 中之勸著劑減少孔洞之方法 ⑴長:供一種組成物，发包括· i , 、匕括種增韌聚合物、一 :::樹脂、-種用於可固化樹脂之固化劑、 侗：二個彼此毗連的矽-氧部份及至少 二==能之孔洞減少化合物，及-種用於 孔洞減少化合物之固化劑； (ii)施加此組成物至一载體； 10 ⑽^階化此組成物’因而製得—種加載體之黏合 膜； (iv) 將加載體黏合膜之黏合側接觸至—半導體晶片或 至一半導體晶片之基底； (v) 移除載體藉以暴露黏合膜； (W)若黏著舰施加至半導體晶片之基料，將半導 f晶片接觸，或者若黏著劑被施加至半導體晶片 ^將基底接觸，至暴露的黏合膜，以使黏合臈 安置於晶片與其基底之間，及 (vii)使黏著膜接受至少一項熱操作。 7.根據申請專利範圍第6項之方法，其中反應性官能為 選自群組包括：乙烯基、羥基、羧基、環氧基、丙烯 酸醋、甲基丙烯酸酯、及這些之組合。 S.巧據申請專利範圍第6項之方法，其中可固化樹脂為 選自群組包括：二馬來醯亞胺、及環氧樹脂。 200923039 9.根據申請專利範圍第6項之方法，其中增韌聚合物為 選自群組包括：CTBN橡膠、及一種聚合物，其包括 一主幹’及自主幹垂掛至少一個矽氧烷部份與至少一 個能夠反應生成新共價鍵之反應性部份。 5 1 〇.根據申請專利範圍第6項之方法，其中孔洞減少化合 物為選自群組包括：43 200923039 and a combination of these. 6. A method for reducing the hole in a semiconductor package comprising: a persuasion agent (1) long: for a composition comprising: i, a kind of toughened polymer, a::: resin, a species a curing agent for a curable resin, 侗: two 矽-oxygen moieties adjacent to each other and at least two == pore-reducing compounds, and a curing agent for the pore-reducing compound; (ii) applying the composition a material to a carrier; 10 (10) ^ grading the composition 'therefore obtained a bonding film of the loading body; (iv) contacting the bonding side of the loading body bonding film to the semiconductor wafer or to the substrate of a semiconductor wafer; (v) removing the carrier to expose the adhesive film; (W) contacting the semiconductor f wafer if the adhesive is applied to the substrate of the semiconductor wafer, or contacting the substrate to the exposed bonding if the adhesive is applied to the semiconductor wafer The membrane is such that the adhesive crucible is disposed between the wafer and its substrate, and (vii) the adhesive film is subjected to at least one thermal operation. 7. The method of claim 6, wherein the reactive functional group is selected from the group consisting of vinyl, hydroxyl, carboxyl, epoxy, acrylic acid, methacrylate, and combinations thereof. S. The method of claim 6, wherein the curable resin is selected from the group consisting of: dimaleimide, and epoxy resin. The method of claim 6, wherein the toughening polymer is selected from the group consisting of: CTBN rubber, and a polymer comprising a trunk and an autonomous dry hanging at least one oxane portion At least one reactive moiety capable of reacting to form a new covalent bond. 5 1 . The method of claim 6, wherein the pore reducing compound is selected from the group consisting of: CHj \CR3^Cff3CHj \CR3^Cff3 及這些之組合。 10 U.根據申請專利範圍第6項之方法，其中載體為一種剝 離櫬裏，選自群組包括：聚醯亞胺膜、聚萘酸乙烯酯 膜、及聚對献酸乙烤醋膜。 12.根據申請專利範圍第6項之方法，其中基底為一種用 於半導體封裝之有機物基底，選自群組包括：二馬來 15 酸亞胺三嗪樹脂、環氧樹脂、及FR-4板。 13.根據申請專利範圍_ 6項之方法，其中熱操作為選自 200923039 群組包括··黏著劑之固化、或封裝之引線接合。 14. 一種半導體封裝，製自： (i) 提供一種組成物，其包括：一種增韌聚合物、一 種可固化樹脂、一種用於可固化樹脂之固化劑、 一種具有至少二個彼此毗連的矽_氧部份及至少 一個反應性官能之孔洞減少化合物、及一種用於 孔洞減少化合物之固化劑； (ii) 將此組成物施加至一載體； (沿）B-階化此組成物，因而製得一種加載體之黏合 膜； (iv) 將加載體黏合膜之黏合側與一切割帶接觸； (v) 層壓此黏合膜至切割帶’因此製得一成束晶圓背 側層壓（BWBL)膜； (vi) 移除載體，將BWBL膜之暴露黏合側與半導體 晶圓接觸’並層壓此BWBL至半導體晶圓，而 使黏合膜置於半導體晶圓與切割帶之間； (vii) 切割此晶圓與黏合劑使成為個別的具有黏著劑 之半導體晶片； (viii) 自切割帶取下具有黏合膜之晶片； (u)將黏合膜與基底接觸，致使黏合膜置於半導體晶 片與基底之間，以生成一組裝；及 00 使此组裝接受至少一項熱操作。 根據申請專利範圍第14項之半導體封裝，其中反應性 官能為選自群組包括：乙烯基、羥基、羧基、環氧基、 46 200923039 丙烯酸酯、曱基丙烯酸酯、及這些之組合。 16. 根據申請專利範圍第Η項之半導體封裝，其中可固化 樹脂為選自群組包括：二馬來醯亞胺、及環氧樹脂。 17. 根據申請專利範圍第Η項之半導體封裝，其中增動聚 合物為選自群組包括：CTBN橡膠、及一種聚合物， 其包括一主幹，及自主幹垂掛至少一個梦氧烧部份與 至少一個能夠反應生成新共價鍵之反應性部份。 18. 根據申請專利範圍第14項之半導體封襞，其中孔洞減 少化合物為選自群組包括：And a combination of these. 10 U. The method of claim 6, wherein the carrier is a stripping crucible selected from the group consisting of: a polyimide film, a polyethylene naphthalate film, and a polyacetate film. 12. The method of claim 6, wherein the substrate is an organic substrate for a semiconductor package selected from the group consisting of: dimale 15 acid imine triazine resin, epoxy resin, and FR-4 board. . 13. The method of claim 6, wherein the thermal operation is selected from the group consisting of 200923039, including curing of an adhesive, or wire bonding of a package. 14. A semiconductor package made from: (i) a composition comprising: a toughening polymer, a curable resin, a curing agent for a curable resin, and a crucible having at least two adjacent to each other a oxygen-reducing portion and at least one reactive functional pore reducing compound, and a curing agent for the void reducing compound; (ii) applying the composition to a carrier; (b) B-staged the composition, thus Preparing a bonding film of the loading body; (iv) contacting the bonding side of the bonding body bonding film with a dicing tape; (v) laminating the adhesive film to the dicing tape ' thus preparing a bundle of wafer back side lamination (BWBL) film; (vi) removing the carrier, contacting the exposed bonding side of the BWBL film with the semiconductor wafer' and laminating the BWBL to the semiconductor wafer, and placing the adhesive film between the semiconductor wafer and the dicing tape; (vii) cutting the wafer and the adhesive to form an individual semiconductor wafer with an adhesive; (viii) removing the wafer with the adhesive film from the dicing tape; (u) contacting the adhesive film with the substrate, causing the adhesive film to be placed Semiconductor wafer and Between the substrates to create an assembly; and 00 to allow the assembly to undergo at least one thermal operation. A semiconductor package according to claim 14 wherein the reactive functional group is selected from the group consisting of vinyl, hydroxyl, carboxyl, epoxy, 46 200923039 acrylate, methacrylate, and combinations thereof. 16. The semiconductor package of claim 3, wherein the curable resin is selected from the group consisting of: bismaleimide, and epoxy resin. 17. The semiconductor package of claim 3, wherein the actuating polymer is selected from the group consisting of: CTBN rubber, and a polymer comprising a stem and an autonomous dry hanging at least one dream oxygen burning portion At least one reactive moiety capable of reacting to form a new covalent bond. 18. The semiconductor package of claim 14 wherein the void reducing compound is selected from the group consisting of: 10 及這些之組合。 19. 15 2〇, =申印專利範圍幻4項之半導體封I，其中基 一種用於半導體封裝之有機物基底，括· 二馬來嶋三她旨、環氧樹脂、&FR4板 ^申請專利範圍第14項之半導體封楚，其中熱處理 ，、、、廷自群組包括：黏著劑之固化、及封裝之引線接合。 4710 and a combination of these. 19. 15 2〇, = Printing of the patent range of the patent range 4, the semiconductor package I, which is based on an organic substrate for semiconductor packaging, including the two Malay, her epoxy resin, & FR4 board ^ patent The semiconductor seal of the 14th item, wherein the heat treatment, the, and the self-group includes: curing of the adhesive, and wire bonding of the package. 47
TW097117985A 2007-11-20 2008-05-16 Low-voiding die attach film, semiconductor package, and processes for making and using same TW200923039A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2007/085278 WO2009067113A1 (en) 2007-11-20 2007-11-20 Low-voiding die attach film, semiconductor package, and processes for making and using same

Publications (1)

Publication Number Publication Date
TW200923039A true TW200923039A (en) 2009-06-01

Family

ID=40667769

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097117985A TW200923039A (en) 2007-11-20 2008-05-16 Low-voiding die attach film, semiconductor package, and processes for making and using same

Country Status (2)

Country Link
TW (1) TW200923039A (en)
WO (1) WO2009067113A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI577771B (en) * 2012-04-25 2017-04-11 信越化學工業股份有限公司 Adhesive composition, an adhesive sheet using the adhesive composition, a semiconductor device protection material, and a semiconductor device

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102898959B (en) * 2011-07-25 2016-07-06 汉高股份有限及两合公司 A kind of photo curable adhesive composition and application thereof
JP6542504B2 (en) * 2013-02-20 2019-07-10 日東電工株式会社 Film adhesive, dicing tape with film adhesive, method of manufacturing semiconductor device, and semiconductor device
KR101974257B1 (en) * 2014-08-29 2019-04-30 후루카와 덴키 고교 가부시키가이샤 Adhesive film and semiconductor package using adhesive film
US20190284444A1 (en) * 2016-11-28 2019-09-19 3M Innovative Properties Company An adhesive composition and an adhesive film obtained therefrom
KR20210048012A (en) * 2019-10-22 2021-05-03 주식회사 엘지화학 Adhisive compound for semiconductor and film using the same
CN115322522A (en) * 2022-08-22 2022-11-11 中国科学院宁波材料技术与工程研究所 Polythioetherimide modified epoxy resin and preparation method thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5496784A (en) * 1990-10-29 1996-03-05 Mcdonnell Douglas Corporation Chemical resistant coating compositions
US5684060A (en) * 1996-04-09 1997-11-04 Minnesota Mining And Manufacturing Company Compositions containing inorganic, organic and organometallic palladium hydrogen scavengers
US6376100B1 (en) * 1999-06-09 2002-04-23 Shin Etsu-Chemical Co., Ltd. Flip-chip type semiconductor device underfill material and flip-chip type semiconductor device
JP2001151994A (en) * 1999-11-26 2001-06-05 Sumitomo Bakelite Co Ltd Epoxy resin compositions and semiconductor device
JP2001172603A (en) * 1999-12-15 2001-06-26 Toshiba Chem Corp Adhesive for electronic device
JP4844776B2 (en) * 2000-04-07 2011-12-28 ナガセケムテックス株式会社 Electrically connectable semiconductor adhesive
JP4520003B2 (en) * 2000-04-14 2010-08-04 株式会社カネカ Curable composition
JP2002020586A (en) * 2000-07-05 2002-01-23 Shin Etsu Chem Co Ltd Epoxy resin composition
US6989433B2 (en) * 2001-05-08 2006-01-24 Georgia Tech Research Corp. Low stress conformal coatings of reliability without hermeticity for microelectromechanical system based multichip module encapsulation
US20030215588A1 (en) * 2002-04-09 2003-11-20 Yeager Gary William Thermoset composition, method, and article
US7045586B2 (en) * 2003-08-14 2006-05-16 Dow Corning Corporation Adhesives having improved chemical resistance and curable silicone compositions for preparing the adhesives
US20070212556A1 (en) * 2006-03-07 2007-09-13 Musa Osama M Curable materials containing siloxane

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI577771B (en) * 2012-04-25 2017-04-11 信越化學工業股份有限公司 Adhesive composition, an adhesive sheet using the adhesive composition, a semiconductor device protection material, and a semiconductor device

Also Published As

Publication number Publication date
WO2009067113A1 (en) 2009-05-28

Similar Documents

Publication Publication Date Title
TW200923039A (en) Low-voiding die attach film, semiconductor package, and processes for making and using same
TWI592455B (en) An adhesive composition, an adhesive sheet, and the manufacturing method of a semiconductor device
TWI373503B (en) Dicing die bonding film
TWI414011B (en) Dicing die bonding film
TWI394812B (en) Adhesive film composition for semiconductor assembly, adhesive film, dicing die bonding film, device package, and associated methods
TW200424279A (en) Adhesives composition, adhesive film, and semiconductor apparatus using the same
TWI669363B (en) Reagent composition, adhesive sheet, and method of manufacturing semiconductor device
TW200821368A (en) Film for use in semiconductors, method for making a film for use in semiconductor, and semiconductor device
US20100279469A1 (en) Low-Voiding Die Attach Film, Semiconductor Package, and Processes for Making and Using Same
TW201222651A (en) Dicing-diebonding film and method for fabricating semiconductor device
TW200911943A (en) Adhesive composition, adhesive sheet and production process for semiconductor device
JP2011516658A (en) Multilayer UV curable adhesive film
TWI742139B (en) Resin composition, resin sheet and semiconductor device
TW201248708A (en) Method of manufacturing semiconductor device
CN106471077B (en) Adhesive film and semiconductor package using the same
TW200930782A (en) Dicing die bonding film having excellent burr property and reliability and semiconductor device using the same
TW201213489A (en) Bonding sheet and method for mounting semiconductor chip
JP5774322B2 (en) Adhesive composition for semiconductor, adhesive sheet for semiconductor, and method for manufacturing semiconductor device
TW201125946A (en) Thermosetting die bonding film
TW201132729A (en) Attach film composition for semiconductor assembly and attach film using the same
TW201026800A (en) Semiconductor chip laminate and adhesive composition for semiconductor chip lamination
TWI591140B (en) An adhesive composition, a sheet, and a method of manufacturing a semiconductor device
TW200933722A (en) Adhesive sheet for semiconductor and adhesive sheet for semiconductor integrated with dicing tape
JP2009242605A (en) Adhesive composition, adhesive sheet, and production method of semiconductor device
TW202003755A (en) Resin composition, laminate, semiconductor wafer with resin composition layer, mounting board for semiconductor with resin composition layer, and semiconductor device