TW200922947A - Photosensitive resin and photosensitive composition - Google Patents

Photosensitive resin and photosensitive composition Download PDF

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Publication number
TW200922947A
TW200922947A TW96144706A TW96144706A TW200922947A TW 200922947 A TW200922947 A TW 200922947A TW 96144706 A TW96144706 A TW 96144706A TW 96144706 A TW96144706 A TW 96144706A TW 200922947 A TW200922947 A TW 200922947A
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TW
Taiwan
Prior art keywords
formula
photosensitive resin
group
following formula
acid
Prior art date
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TW96144706A
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Chinese (zh)
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TWI429665B (en
Inventor
Takeo Watanabe
Hiroo Kinoshita
Shinichi Yusa
Tomotaka Yamanaka
Masamichi Hayakawa
Yosuke Osawa
Satoshi Ogi
Yoshitaka Komuro
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Hyogo Prefecture
Toyo Gosei Co Ltd
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Publication of TW200922947A publication Critical patent/TW200922947A/en
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Publication of TWI429665B publication Critical patent/TWI429665B/en

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Abstract

Provided is a photosensitive resin and photosensitive composition capable of obtaining well-formed pattern, without accompanying with a problem of an acid-generating agent being difficult to be compatible with a polymer having an acidic dissociation group which is a main component of photo-resist. The photosensitive resin according to the present invention includes a repeated unit represented by the following formula (1), at least one of a repeated unit represented by the following formula (2) and a repeated unit represented by the following formula (3), and a repeated unit represented by the following formula (4), and may further include a repeated unit represented by the following formula (5) if required. (in the formula (1), R1 represents C2 to 9 linear or branched bivalent hydrocarbon group, R2 to R5 respectively independently represent hydrogen atom or C1 to 3 linear or branched hydrocarbon group, R6 and R7 respectively independently represent organic group, R6 and R7 may form a bivalent organic group together. X- represents anion.) (in the formula (2), R8 represents C2 to 9 linear or branched bivalent hydrocarbon group.)

Description

200922947 九、發明說明: 【發明所屬之技術領域】 本發明乃有關在結構中具有藉深紫外光、電 及二,外光(EUV)等活性輻射線之照射容易產酸之沾構 士文解離基’而做為化學放大型之光阻材料為有用之 性樹脂,以及使用該樹脂之感光性組成物。 【先前技術】 例如以DRAM等所代表之高積體電路元件等半導體裳 中’係期待更進一步之高密度化、高積體化或高速化。 通之,各種電子裝置之製造領域中,對於半微米級之微細 加工技術之建立、例如形成微細圖案用之光微影 (photolithQgraphy)技術研發之要求侧加嚴格。光微夺 技術中,圖謀圖案之微細化之方法之—為形成光阻之㈣ 之際’縮短所使用活性輻射線(曝光用光)之波長之方法。 此處’由於縮小投影曝光裝置之解像度⑻係由雷利氏 ⑽yleigh)式R=k •入/NA(式中,入示曝光之波長,難示 透鏡孔徑’ k示製程因數(prQcess faetQr))所示,所以可 精由將形成光阻之目案之際所使用之活性輻射線(曝光用 光)之波長λ加以短波長化而改善解像度。 適合於短波長之光阻係提議有化學放大型者(參照專 利文獻1等)。化學放大型光阻之特徵為,藉由曝光之光照 射,而彳之屬於其所含成份之光產酸劑產生質子酸,該質子 酸係藉由曝光後之加熱處理而與具有酸解離性基(因酸而 解離•分解之基)之聚合物等發生酸觸媒反應。現已研發之 319750 9 200922947 光阻之大半屬於化學放大型。該化學放大型光阻 酸劑已周知有各種毓鹽(sulfonium)。 然而,以往之銃鹽系光產酸劑係有跟具有屬於光阻之 主成份之酸解離基的聚合物之間互溶性不良等缺點 :也光:=,在含有該光產酸劑之光阻上以活性輻射線 "、/成圖案時,會發生所得圖案形狀非為所期待形狀箅 不良影響之問題。 ' 專利文獻1 :美國專利第4491628號 f發明内容】 [發明欲解決之課題] 本發明有鐘於上述情形,以提供一種感光性樹脂及感 性組成物為本發明之課題,該感光性樹脂不會伴隨著產 U和具有屬於光阻之主成份之酸解離基的聚合物之間互 溶性不良的問題,而可得良好形狀之圖案。 [解決課題之手段] 用於解決上述課題之本發明之第一種方法乃提供一種 感光性樹脂’具有下式⑴所示之重複單位、下式⑵所示 之重複單位和下式⑻所示之重複單位之至卜方、以及下 式⑷所7F之重複單位’必要時復可具有下式⑸所示之重 複單位。 319750 10 200922947200922947 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to the dissociation of the structure which is susceptible to acid production by irradiation of active ultraviolet radiation such as deep ultraviolet light, electricity, and external light (EUV). The photoresist which is a chemically amplified type is a useful resin, and a photosensitive composition using the resin. [Prior Art] For example, semiconductors such as high-integrated circuit elements represented by DRAMs and the like are expected to have higher density, higher integration, and higher speed. In addition, in the field of manufacturing various electronic devices, the establishment of microfabrication technology of a half micron order, for example, the development of photolithography for forming fine patterns has been tightened. In the technique of miniaturization of the technique, the method of miniaturizing the pattern is to shorten the wavelength of the active radiation (exposure light used) at the time of forming the photoresist (4). Here 'because the resolution of the reduced projection exposure device (8) is from Rayleigh (10) yleigh) R = k • In / NA (wherein, the wavelength of the exposure is shown, the lens aperture is not shown, the process factor (prQcess faetQr) is shown) As shown in the figure, the wavelength λ of the active radiation (exposure light) used for the purpose of forming the photoresist can be shortened to improve the resolution. A photo-resistance system suitable for a short wavelength is proposed to have a chemical amplification type (refer to Patent Document 1, etc.). The chemically amplified photoresist is characterized in that it is irradiated by exposure light, and the photoacid generator belonging to the component contained therein produces a protonic acid which is subjected to heat treatment after exposure and has acid dissociation property. An acid catalyst reaction occurs in a polymer such as a base (dissociated and decomposed by an acid). The 319750 9 200922947 light resistor has been developed and is mostly chemically amplified. A variety of sulfonium salts are known for this chemically amplified photoresist. However, the conventional bismuth salt photoacid generator has disadvantages such as poor mutual solubility with a polymer having an acid dissociation group which is a main component of a photoresist: also: =, in the light containing the photoacid generator When the pattern of the active radiation line ", / is blocked, the resulting pattern shape does not have the problem of adversely affecting the desired shape. [Patent Document 1: U.S. Patent No. 4,491,628, the disclosure of the present invention] [Problems to be Solved by the Invention] The present invention has the above-mentioned circumstances, and provides a photosensitive resin and an inductive composition which are the subject of the present invention, and the photosensitive resin is not There is a problem that the mutual solubility between the product U and the polymer having an acid dissociation group which is a main component of the photoresist is poor, and a pattern of a good shape can be obtained. [Means for Solving the Problem] The first method of the present invention for solving the above problems provides a photosensitive resin having a repeating unit represented by the following formula (1), a repeating unit represented by the following formula (2), and the following formula (8). The repeating unit of the repeating unit and the repeating unit of the following formula (4) 7F may have a repeating unit represented by the following formula (5) if necessary. 319750 10 200922947

Ο) v ^ v 1; r ,Κι,砉子工山也_ n p ^ D 、厌數1至9之直鏈狀或分枝狀」 貝之烴基,R2至r5各自猸 ^ ^ 目獨立地表不氣原子或碳數1至Ο) v ^ v 1; r , Κι, 砉子工山也 _ np ^ D, versatile 1 to 9 linear or branched" The hydrocarbon group of the shell, R2 to r5 each 猸 ^ ^ Gas atom or carbon number 1 to

之直鏈狀或分枝狀之煙,基R p ^ ^焱基匕及1^各自獨立地表示有機 基,匕及R?可一起形成2價 |貝<虿機基,X表示陰離子)Straight or branched smoke, the bases R p ^ ^ 焱 匕 and 1 ^ each independently represent an organic group, and 匕 and R? may together form a bis-valent | shell & 虿 虿 machine base, X represents an anion)

(式(2)中 基) 表示碳數1至9之直鏈狀或分枝狀 之烴 319750 11 1 200922947 (3)(Formula (2) base) represents a linear or branched hydrocarbon having a carbon number of 1 to 9 319750 11 1 200922947 (3)

OHOH

(5) 本發明之第_ 脂,A中,—種法如第一種方法所記载之残光性料 X所示之陰離子 默m·生树(5) The _ lipid of the present invention, A, the method of the anion of the residual light material X as described in the first method

CkHmFnS〇3- (6) 于係下式(6)所示之陰離子。 (式(6)_,讫、 當m為〇時,k m n各自獨立地表示〇以上之整數; 烷磺酸鹽離子.1 之正數,n為2k + 1,式(6)為全氟 以上之整數,式(^λ!Λ時’"為1至15之整數,m為1 續酸鹽離子;酸歸子、料酸餘子或院苯 至ι〇之整數,獨立地為1以上之整數時,k為1 代之燒基苯錯酸氟取代之苯磺酸鹽離子、經氟取 本或經氟取代之料酸鹽離子) 脂,其;,&方法如第一種方法所記载之感光性樹 陰離子係下式⑺所示之雙(全氟烷基 319750 12 200922947 石黃酿)亞胺離子CkHmFnS〇3- (6) is an anion represented by the following formula (6). (Formula (6)_, 讫, when m is 〇, kmn each independently represents an integer above 〇; a positive number of the alkane sulfonate ion. 1, n is 2k + 1, and the formula (6) is a perfluoro or higher Integer, formula (^λ!Λ'" is an integer from 1 to 15, m is 1 continuous acid ion; acid return, acid residue or benzene to ι〇 integer, independently 1 or more In the case of an integer, k is a 1st generation of a pyridyl benzene-substituted benzene-substituted benzenesulfonate ion, a fluorine-substituted or fluorine-substituted acid salt, which is a method of the first method. The photosensitive tree anion described in the following formula (7) is a double (perfluoroalkyl 319750 12 200922947 sallow) imine ion

(CpF2P+iS〇2)2N— (式⑺中,為1至8之整數。) 匕,^發明之第四種方法如第一種方法所記載之感光性樹 ’、中X所示之陰離子係下式(8)所示之陰離子。 〇衅八so2 F2C、JF2 . (8) 本么明之第五種方法如第一種至第四種方法中任一項 所記載之感光性樹脂,其中,重量平均分子量在2,⑽0至 100, OGG fen ’上式⑴之重複單位數a、上式⑵之重複單 位數b上式(3)之重複單位數^、上式⑷之重複單位數心 及上式⑸之重複單位數Μ系滿足a/(a+b+c+d+e) = 〇.謝 〇·3 > (b+c)/(a+b+c+d+e) = 〇.1 ^ 〇. 5 > (d+e)/(a+b+c + d+e) = 0.5 至 〇·8、及 e/(d+e) = 〇 至 〇.2。(CpF2P+iS〇2) 2N—(In the formula (7), an integer from 1 to 8.) 匕, ^ The fourth method of the invention is as shown in the first method, the photosensitive tree shown in the first method, and the anion shown by X An anion represented by the following formula (8) is used. 88 So2 F2C, JF2. (8) The fifth method of any one of the first to fourth methods, wherein the weight average molecular weight is 2, (10) 0 to 100, OGG fen 'The number of repeating units of the above formula (1) a, the number of repeating units of the above formula (2) b, the number of repeating units of the above formula (3) ^, the number of repeating units of the above formula (4) and the number of repeating units of the above formula (5) a/(a+b+c+d+e) = 〇.谢〇·3 > (b+c)/(a+b+c+d+e) = 〇.1 ^ 〇. 5 > ( d+e)/(a+b+c + d+e) = 0.5 to 〇·8, and e/(d+e) = 〇 to 〇.2.

本發明之第六種方法如 所記載之感光性樹脂,其中 基。 第一種至第五種方法中任一項 ’主鏈之末端基係氫原子或甲 乃提供一種感光性組成物,其為 種至第六種方法令任一項所記戴 本發明之第七種方法 於有機溶劑中溶有如第一 之感光性樹脂之溶液。 [發明之效果] 319750 13 200922947 不含產酸劑之方式單獨成為化學放大型之感光性組成物, 所以不冒伴生產酸劑與具有酸解離基之聚合物間之互溶性 不良之問題,達到可得良好形狀之圖案之效果。 【實施方式】 洋細說明本發明如下。 ,本卷明之感光性樹脂具有上式(1)所示之重複單位、上 式(2)所示之重複單位和上式(3)所示之重複單位之至少一 方 '以及上式(4)所示之重複單位,必要時尚具有上式(5) 所示之重複單位,並具有源自鏡鹽之光產酸劑功能之架構 及酸解離基之聚合物。由於本發明之感光性樹脂具有做為 光產酸劑功能之架構及酸解離基,故可藉溶解在溶劑,不 必含有產酸劑而單獨成為化學放大型之感光性組成物。因 此’使用於感光性組成物時,沒有產酸劑及具有酸解離基 之聚合物間之互溶性不良問.題之伴生,可得形狀良好之圖 案。 /、體σ之,式(1)所不之重複單位具有曝光於活性輻射 線而產酸之做為光產酸劑功能之架構、以及由該產酸劑所 產生之酸而可解離之酸解離基。 又,上式(2)所示之重複單位及上式(3)所示之重複單 ,乃具有以藉由酸就能解離之基來改質上式⑷所示之重 ,單位中之I系㈣之架構。上式⑷所示之重複單位及上 、(5)所不之重複單位皆為對於鹼顯像液之溶解性有相關 者,藉由調整其量就可調整其溶解性。 本發明之感光性樹脂本身不溶或極難溶於驗顯像液 319750 14 200922947 中,但是經由活性輻射飧異 耵綠曝先,從式(1)所示之重複單位產 生酸,由該酸之作用,上式 /丁之董複早位產 ^ ^ ππ 式(1)所不之重複單位、上式(2) 所不之重稷早位及上式(3) w J斤下之重稷早位之酸解離基係 解離,而增加其對於鹼顯像液之溶解性。 上式(1)中’R!為碳數〇 主……丄 反歎Z至9之二價烴基,可任意為直 鏈或分枝狀。1至r5各自獨 ^ > & 4·、\ 目獨立地表不虱原子或碳數1至3 之直鏈狀或分枝狀烴基。匕及 -t- ( 目獨立地表不有機基。 =:基之例如直鏈、分枝或脂環狀構造之院基。又,該 =環㈣基或雜環狀芳基。較佳之有機基為 上、…U本基、?苯基及第三丁基苯基為最佳。 ί述反讀方基或雜環狀芳基可具有碳數i至30之取代 取代基之例如以碳數1至30之烴基 基為較佳。該做為取代基之碳數1至30之烴基係例 =基二基、丙基、.異丙基、正丁基、第二丁基、第三 山土戍基、己基、庚基、辛基、第三戊基、癸基、十二 石厌烷基及十六碳烷基等烷基, ^ m 4 %丙基、%戊基、環己基、 二i王:::奴烷基、環十六碳烷基及金剛烷基等脂環 Λ ^基做為取代基之碳數1 至3 0之烧氧基係例如甲董其 不丁备里 乳基、乙虱基、丙氧基、異丙氧基、 ^ ^ j虱基、第二丁氧基、戊氧基、 ΐ:ΐ 己氧基、正辛氧基、正癸氧基及1-金剛烧 上述ΐ力可互相結合而形成環’此時’可成為包括 人木構之2價有機m。該2價之有機基係例 319750 15 200922947 如由具有飽和碳架構之h及R?聯結而成碳數3至9之脂環 狀烧基。該脂環狀燒基中之較佳例可列舉如伸丁基及伸戊 基等多亞甲基等。—般,2價之有機基备m 一起形 成之環,以4至8員環為較佳,尤以5至6員環為更佳。 式(1)中X所示之陰離子並無特別限制,可採用以往 光產酸劑所用之陰離子。該陰離子之例可列舉如式⑻所示 之陰離子、上式⑺所示之陰離子及上式⑻所示之陰離子 (環1,3-全氟丙烷二磺醯亞胺離子)。 ,弋()中k m及η各自獨立地表示q以上之整數。 當m為0時,U 1至8之整數,η為2kH,式⑻為全氟 烷基磺酸鹽離子。較佳之入_卜A v # )為王亂 斤 1之王鼠院基%酸鹽之例可列舉如 CF3SO3 (二氟甲續酸鹽離子) .rp 離千)CASO3 (九氟丁烷磺酸鹽離 8 17、3 (十七氟辛燒續酸鹽離子)等。 、又式(6)中1為0時,k為1至15之整數,^為! 以上之整數’式⑻為糾㈣離子、苯俩 續酸鹽離子。當燒續酸鹽離子時,m為如。較佳=: 酸鹽離子之例可列舉如⑽鹽離子 ^ (乙磺酸鹽離子)、C9HI9sn-ri . 9lli9S〇3 (〗-壬磺酸鹽離 狀烷磺酸鹽離子,例如ϊη #ηκ< w 寻次又聯% J如10-知腦磺酸鹽離子等。 苯磺酸鹽離子之例可列舉如 兀 三異丙苯續酸鹽離子。 甲本㈣鹽離子或2,4,6- 又,式⑻中,各自獨立地為^上 k為1至10之整數,式正數$ ^ b 式(6)為經氟取代之苯磺酸鹽離子、 !氟取代之燒苯續酸鹽離^ 文孤離子或經氟取代之烷磺酸鹽離子。 319750 16 200922947 較佳之經氟取代之苯磺酸鹽 離子、4-氟苯錢_離子 …糸如2~氟苯磺酸鹽 苯賴鹽離子等。; ,4:,氟苯磺酸鹽離子及五氟 γ丨係 乂佺之經氟取代之烷苯磺酸鹽離子 :ΓΓ4:氣一⑽ Α)苯外趟又—鼠甲基)苯石黃酸鹽離子及3,5 —雙(三氟甲 :例二 子等。又,較佳之經氟取代之院磺酸鹽離子 ’、、 ,丨,2, 3, 3’3 —六氟丙磺酸鹽離子。 式⑺所示之陰離子為雙(全氟烧相)亞胺離子,式 早之制在心1至整數。較佳之雙(全氟院績醯)亞胺離 雙(三氟甲伽)亞胺離子及雙(五氟乙石黃酿)亞 月:ίΓ離千荨。 本發明之感光性樹脂,其主鏈之末端為氫原子或甲基 為佳。該末端基可域在合成做為基材之聚合物時之聚合 引發劑及終止·劑而任意決定。 又,本發明之感光性樹月旨,其重量平均分子量以2,〇〇〇 至ip^OOf範圍為佳,其中,以2,_至50,_範圍為較 佳。田重里平均分子量小時’曝光感度降低且硬化膜強度 亦降低,當重量平均分子量大時,對於基板之黏接性降低 而圖案形成不易。X,上述重量平均分子量乃指本發明之 感光性樹脂藉由凝膠滲透層析法(GPG)所得之聚苯乙稀換 异重量平均分子量(MW)QMW和藉GPC所得之聚$乙婦換算 數平均分子量(Μη)之比率(Mw/Mn),一般以i至3為宜,其 中,以1至2.5為較佳。又,式⑴之重複單位數為&,式 (2)之重複單位數為b,式(3)之重複單位數為c,式(4)之 319750 17 200922947 重複單位數為d,及式(5 )之重複單位數為e,以能滿足 a/(a+b+c+d+e>〇. 〇〇1 至 〇. 3、(b+c)/(a+b+c+d+e>〇.丨至 〇· 5、(d + e)/(a+b+c+d+e)= 0.5 至 0·8、及 e/(d+e) = 〇 至 〇. 2較佳。滿足a/(a+b+c+d+e) = 〇· 〇〇1至〇. 3之條件時, 式(1)所具有之藉曝光產酸之構造係成為觸媒量,能達成良 好的產酸劑之功能。又,當(b+c)/(a+b + c+d + e) = 〇· i至〇. 5 時,可達成對於鹼顯像液之溶解抑制功能之效果。當滿足 (d+e)/ (a+b+c+d+e)=0.5 至 0·8 及 e/(d+e)=〇 至 〇.2 時, 可達成對於基板等塗布對象之黏接性良好及對於鹼顯像液 之溶解性良好之效果。 又,本發明之感光性樹脂,其架構中除式(1)至式(5 ) 所示各重複單元之外,在不影響本發明之效果範圍内,尚 可具有其他架構。 本發明之感光性樹脂之製造方法雖無特別限制,例如The sixth method of the present invention is as described in the photosensitive resin, wherein. Any one of the first to fifth methods, wherein the terminal hydrogen atom or the methyl group of the main chain provides a photosensitive composition, which is a species to the sixth method, Seven methods dissolve a solution of the first photosensitive resin in an organic solvent. [Effects of the Invention] 319750 13 200922947 The method of not containing an acid generator alone becomes a chemically amplified photosensitive composition, so that the problem of poor mutual solubility between the acid generator and the polymer having an acid dissociation group is not caused. The effect of a good shape pattern can be obtained. [Embodiment] The present invention will be described below. The photosensitive resin of the present invention has a repeating unit represented by the above formula (1), a repeating unit represented by the above formula (2), and at least one of repeating units represented by the above formula (3), and the above formula (4) The repeating unit shown is a polymer having a repeating unit represented by the above formula (5) and having a structure derived from the photoacid generator function of the mirror salt and an acid dissociation group. Since the photosensitive resin of the present invention has a structure and an acid dissociation group as a function of a photoacid generator, it can be a chemically amplified photosensitive composition by dissolving in a solvent and not necessarily containing an acid generator. Therefore, when used in a photosensitive composition, there is no problem of miscibility between an acid generator and a polymer having an acid dissociation group, and a pattern having a good shape can be obtained. /, the body σ, the repeating unit of the formula (1) has a structure which is exposed to active radiation and produces acid as a function of a photoacid generator, and an acid which can be dissociated by an acid generated by the acid generator Dissociation base. Further, the repeating unit represented by the above formula (2) and the repeating sheet represented by the above formula (3) have a weight expressed by the above formula (4) in a group which can be dissociated by an acid, and the unit I The structure of the system (4). The repeating unit shown in the above formula (4) and the repeating unit in the above (5) are all related to the solubility of the alkali developing solution, and the solubility can be adjusted by adjusting the amount. The photosensitive resin of the present invention itself is insoluble or extremely difficult to dissolve in the test liquid 319750 14 200922947, but the acid is generated from the repeating unit represented by the formula (1) by the exposure of the active radiation, and the acid is produced by the acid. Function, the above formula / Dingzhi Dongfu early production ^ ^ ππ Equation (1) does not repeat the unit, the above formula (2) does not focus on the early position and the above formula (3) w J pounds under the weight The acid dissociation in the early position dissociates and increases its solubility in the alkali imaging solution. In the above formula (1), 'R! is a carbon number 〇 main ... 丄 Retorting the divalent hydrocarbon group of Z to 9 and optionally being a straight chain or a branched form. Each of 1 to r5 independently represents an atom or a linear or branched hydrocarbon group having 1 to 3 carbon atoms.匕 and -t- ( independently of the organic group. =: a base such as a linear, branched or alicyclic structure. Also, the ring (tetra) or heterocyclic aryl. Preferred organic Preferably, the U group, the phenyl group and the tert-butylphenyl group are the same. The enthalpy or heterocyclic aryl group may have a substituted substituent of carbon number i to 30, for example, a carbon number. A hydrocarbon group of 1 to 30 is preferred. The hydrocarbon group having 1 to 30 carbon atoms as a substituent is a thiol group, a propyl group, an isopropyl group, a n-butyl group, a second butyl group, and a third mountain. An alkyl group such as a fluorenyl group, a hexyl group, a heptyl group, an octyl group, a third amyl group, a decyl group, a decyl anaalkyl group or a hexadecyl group, ^ m 4 % propyl group, % pentyl group, cyclohexyl group,二i王:::N-alkyl, cyclohexadecyl and adamantyl, etc., as an alkyl group having 1 to 30 carbon atoms as a substituent, such as A. Lacto-based, ethoxylated, propoxy, isopropoxy, ^^j-yl, second butoxy, pentyloxy, hydrazine: hexyloxy, n-octyloxy, n-decyloxy and 1 -The same force can be combined with each other to form a ring 'this time' can be included The bivalent organic m of the wood structure. The organic compound of the divalent form 319750 15 200922947 is an aliphatic cyclic group having a carbon number of 3 to 9 bonded by h and R? having a saturated carbon structure. Preferred examples of the base include a polymethylene group such as a butyl group and a pentyl group. In general, a ring formed of a divalent organic group and m is preferably a ring of 4 to 8 members, particularly The anion represented by X in the formula (1) is not particularly limited, and an anion used in the conventional photoacid generator can be used. Examples of the anion include an anion represented by the formula (8), and an anion. An anion represented by the formula (7) and an anion (cyclo1,3-perfluoropropane disulfonimide ion) represented by the above formula (8). In the 弋(), km and η each independently represent an integer of q or more. When it is 0, an integer of U 1 to 8, η is 2kH, and the formula (8) is a perfluoroalkyl sulfonate ion. Preferably, it is a sb Av # ) Examples include, for example, CF3SO3 (difluoromethane hydrochloride). rp from thousands of CASO3 (nonafluorobutane sulfonate from 8 17 and 3 (heptadecafluorooctanoate), etc. 6) When 1 is 0, k is an integer from 1 to 15, ^ is! The above integer 'Eq. (8) is a correction (tetra) ion, a benzoate acid ion. When the acid ion is burned, m is as. Preferably =: an example of a salt ion For example, (10) salt ion ^ (ethanesulfonate ion), C9HI9sn-ri . 9lli9S 〇 3 (〗-壬 sulfonate salt-like alkane sulfonate ion, such as ϊη #ηκ < w 10- knowing ceramide sulfonate ion, etc. Examples of the besylate ion are exemplified by yttrium triisopropyl benzoate ion. A (4) salt ion or 2, 4, 6-, and (8), each independently The ground is ^, k is an integer from 1 to 10, and the formula is positive ^ ^ b. The formula (6) is a benzene sulfonate ion substituted by fluorine, and a fluorocarbon substituted by a fluorine atom. Alkane sulfonate ion. 319750 16 200922947 Preferred fluorine-substituted besylate ion, 4-fluorobenzene ion, such as 2~fluorobenzenesulfonate, benzoic acid salt, and the like. ; , 4:, fluorobenzene sulfonate ion and fluorine-substituted alkane sulfonate of pentafluoro gamma lanthanide ΓΓ: ΓΓ 4: gas one (10) Α) benzene external oxime and - mouse methyl) benzene yellow Acid ions and 3,5-bis (trifluoromethyl: the second sub-etc. Also, preferably the fluorine-substituted sulfonate ion',, 丨, 2, 3, 3'3 - hexafluoropropane sulfonic acid Salt anion The anion represented by the formula (7) is a bis(perfluorinated phase) imine ion, which is prepared in the first to the whole of the heart. Preferably, the bis (perfluoro) bis(trifluoromethyl) The imide ion and the bis(pentafluoroacetite) are sub-monthly: the photosensitive resin of the present invention preferably has a hydrogen atom or a methyl group at the end of the main chain. The polymerization initiator and the terminating agent in the case of the polymer of the substrate are arbitrarily determined. Further, the photosensitive resin of the present invention preferably has a weight average molecular weight of 2, 〇〇〇 to ip^OOf, wherein The range of 2, _ to 50, _ is preferred. The average molecular weight in the field is small, the exposure sensitivity is lowered and the strength of the cured film is also lowered. When the weight average molecular weight is large, The adhesion of the sheet is lowered and the pattern formation is not easy. X, the above weight average molecular weight refers to the polystyrene exchange weight average molecular weight (MW) obtained by gel permeation chromatography (GPG) of the photosensitive resin of the present invention. The ratio of the average molecular weight (Mw/Mn) of the QMW and the GPC obtained by the GPC is generally from i to 3, and preferably from 1 to 2.5. Further, the repeating unit of the formula (1) The number is &, the number of repeating units of the formula (2) is b, the number of repeating units of the formula (3) is c, the number of repeating units of the formula (4) 319750 17 200922947 is d, and the number of repeating units of the formula (5) For e, to satisfy a/(a+b+c+d+e>〇. 〇〇1 to 〇.3, (b+c)/(a+b+c+d+e>〇.丨 to 〇·5, (d + e) / (a + b + c + d + e) = 0.5 to 0 · 8, and e / (d + e) = 〇 to 〇. 2 is better. Satisfy a / (a +b+c+d+e) = 〇· 〇〇1 to 〇. 3 conditions, the structure of the formula (1) by exposure to acid production becomes the amount of catalyst, and a good acid generator can be achieved. Further, when (b+c)/(a+b + c+d + e) = 〇· i to 〇. 5, the effect of the dissolution inhibiting function on the alkali imaging solution can be achieved. When the foot (d+e)/(a+b+c+d+e)=0.5 to 0·8 and e/(d+e)=〇 to 〇.2, adhesion to a coated object such as a substrate can be achieved. The effect is good and the solubility in the alkali developing solution is good. Further, the photosensitive resin of the present invention does not affect the present invention except for the repeating units represented by the formulas (1) to (5). Within the scope of the effect, there are other architectures. The method for producing the photosensitive resin of the present invention is not particularly limited, for example,

,以下式(13)至(15)而製成。 \ (P2〇5)為觸媒,使式(9)所示化合物和 sulfoxide)反應而得式(10)所示化合 該二烷基亞砜可由以過氧化氫氧化二 得。 例如可藉下述方法導入式(1)所示重複單位。首先,如 下列反應式所示,在甲磺酸(CH3S〇3H)t,以五氧化二磷 二院基亞石風(dialkyl 示化合物(甲磺酸鹽)。又, 氧化二烷基硫醚而容易製 319750 18 (10) 200922947It is produced by the following formulas (13) to (15). \ (P2〇5) is a catalyst, and a compound represented by the formula (9) and a sulfoxide are reacted to obtain a compound represented by the formula (10). The dialkyl sulfoxide can be obtained by hydrogen peroxide oxidation. For example, the repeating unit shown in the formula (1) can be introduced by the following method. First, as shown in the following reaction formula, in methanesulfonic acid (CH3S〇3H)t, with phosphorus pentoxide, the second sulphate (dialkyl compound (methanesulfonate). In addition, oxidized dialkyl sulfide And easy to make 319750 18 (10) 200922947

+ ο II Re~~S—R7+ ο II Re~~S—R7

只3 >5 屬於觸媒之五氧化二磷之用量,相對於式(9)所示化合 物1莫耳,以〇.1至3.〇莫耳為佳,其中,以〇 5至i ^ 莫耳為較佳。又,甲確酸之用量,相對於式(9)所示化合物 1莫耳’以1至10莫耳為佳,其中,以4至6莫耳為較佳。 反應溫度-般在〇至5(rc範圍,其中,以1〇至3〇。〇為較 佳’反應時間一般在!至15小時範圍,其中,以3至8 小時為較佳。反應終了後,藉添加水而終止其反應。 -其次,如下列反應式所示,將式<1〇)所示化合物之甲 石黃酸離子(CH3S0O以X-進行鹽取代。又,下列反應式中, Μ表不一價之金屬離子。具體言之,於式(1〇)所示化合物 之水溶液中,相對於式(1〇)所示化合物1莫耳,添加丨至 2莫耳之X,例如含式(6)、式(了)或式(8)之各種酸(Η+χ_) 或鹽(Μ+Γ)為宜,其中,以U5至1.2莫耳為較佳。反應 〜4可使用例如二氯甲烧、氯仿等氯系溶劑為佳。又,反 應溫度一般在10至5crc範圍,其中,以20至3〇。〇為較佳。 反應終了纟’分離水層’並用水洗淨有機層。洗淨後使用 適當再結晶溶劑令其結晶化,而得式(11)所示化合物。又, 式(10)所不化合物合成後加入碘化鉀於反應溶液,將式(i㈦ 19 319750 200922947 以固體狀分離,精製 就精製物使用磺酸酯將 所示化合物藉碘離子進行鹽取代而 後’再用x進行鹽取代亦行,又, 碘離子進行鹽取代亦可行。Only 3 > 5 is the amount of phosphorus pentoxide which is a catalyst, relative to the compound 1 of the formula (9), preferably from 1.1 to 3. 〇mole, wherein 〇5 to i ^ Moore is preferred. Further, the amount of the methylic acid is preferably from 1 to 10 mols per mol of the compound of the formula (9), and preferably from 4 to 6 mols. The reaction temperature is generally in the range of 〇 to 5 (rc range, wherein 1 〇 to 3 〇. 〇 is preferred) The reaction time is generally in the range of ! to 15 hours, wherein 3 to 8 hours is preferred. The reaction is terminated by the addition of water. - Secondly, as shown in the following reaction formula, the formazin ion of the compound of the formula <1〇) is substituted (CH3S0O is substituted with a salt of X-. Further, in the following reaction formula In the aqueous solution of the compound of the formula (1〇), in contrast to the compound 1 of the formula (1〇), the enthalpy is added to 2 mol of X, For example, it is preferred to include various acids (Η+χ_) or salts (Μ+Γ) of formula (6), formula (8) or formula (8), wherein U5 to 1.2 mol is preferred. It is preferred to use a chlorine-based solvent such as methylene chloride or chloroform. Further, the reaction temperature is usually in the range of 10 to 5 crc, and preferably 20 to 3 Torr. The reaction is finally carried out, and the water layer is separated and washed with water. The organic layer is cleaned and crystallized by using a suitable recrystallization solvent to obtain a compound of the formula (11). Further, the compound of the formula (10) is synthesized. Adding potassium iodide to the reaction solution, and separating the formula (i(7) 19 319750 200922947 as a solid, and purifying the product, using the sulfonate to replace the compound with the iodide ion, and then replacing it with x, and iodine. It is also possible to carry out salt substitution with ions.

(10)(10)

OH R6’S+、r7 ch3s〇3 之後如同下列反應式所示,使用式(1 1 )所示之化合 一矛式(12)所不之化合物進行脫齒化氫反應而得式(13)所 "、之毓鹽又,下列反應式中,γ表示氯及溴等鹵素原子。 具體言之,例如在極性溶劑中,—在碳酸鉀([COO等鹼性觸 媒之存在下,使式(11)所示化合物與式(12)所示化合物反 應而達成。反應溫度一般在60至9(TC範圍。反應終了後, 加入水,用己烷等非極性溶劑洗淨水層後,以氯系溶劑萃 取。然後,分離有機層,用水洗淨後,蒸餾去除氯系溶劑, 而得式(13)所示銃鹽。又,式(9)至式(12)所示化合物亦可 採用市售物。 319750 20 (13) 200922947After OH R6'S+, r7 ch3s〇3, as shown in the following reaction formula, the compound of the formula (1 1 ) is used to carry out the dehydrogenation reaction of the compound of the formula (13) to obtain the formula (13) " Further, in the following reaction formula, γ represents a halogen atom such as chlorine or bromine. Specifically, for example, in a polar solvent, it is achieved by reacting a compound represented by the formula (11) with a compound represented by the formula (12) in the presence of potassium carbonate ([COO or the like). The reaction temperature is generally 60 to 9 (TC range. After the reaction is completed, water is added, and the aqueous layer is washed with a non-polar solvent such as hexane, and then extracted with a chlorine-based solvent. Then, the organic layer is separated, washed with water, and then the chlorine-based solvent is distilled off. Further, a phosphonium salt represented by the formula (13) can be obtained. Further, a compound represented by the formula (9) to the formula (12) can also be used as a commercially available product. 319750 20 (13) 200922947

使該式(13)所示化合物、和聚羥基苯乙烯或聚(經基苯 乙烯-苯乙烯)之共聚物在1,3-二氧雜戊環(diox〇iane)等 有機溶劑中、在酸性觸媒下反應時,可導入上式(1)所示重 複單位。 式(2)所示重複單位可由使羥基苯乙烯或聚(羥基苯乙 烯-苯乙烯)之共聚物和下式(14)所示乙烯醚化合物在 1 ’ 3-二氧雜戊環等有機溶劑"中、酸性觸媒之存在下進行加 成反應.而予以導入。 (R8表示碳數2至9之直鏈狀或分枝狀之烴基。) 匕式(3)所示重複單位可由下式(15)所示二碳酸二—第三 丁酉曰及聚!基苯乙烯或聚(羥基苯乙烯-苯乙烯)之共聚物 在丨,3 —氧雜戊環等有機溶劑中、鹼性觸媒之共存下反應 而製成。 ^〇Λ〇Λ〇ν (15) 又 5 i 具有式(1)至(5)所示重複單位之聚合物適當 319750 21 200922947 反應而製造本發明之感光性樹脂亦行。 至(5)所示重複單位之單體在有機溶 a將式(1) 進行共聚合反應,也能|g成 ,μ 、使用聚合引發劑 溶劑之例如四氫t南咖)、/3明—之,感光性樹脂。該有機 烧(di◦繼)等嗎n ’ —環及1,3-二嗜 劑、光聚合引發劑、氧化還 二:引發 便性、反應速度及是否容易⑽v 4,可考慮處理方 疋否谷易调整分子量等而適當選擇決定。 具體的製造方法例舉如下。關於下列表1中所示第! 里之感光性樹脂,係例如在上述有機溶劑中、在酸性觸媒 之存在下,將式⑽所示化合物及式(13)所示化合物加成 至聚經基苯乙稀中而製成。又,第2型之感紐樹脂可在 上述有機溶劑中、在酸性觸媒之存在下,將式⑽所示化 合物加成至聚經基苯乙-烯中後,添加驗性觸媒及式(⑸所 示化合物經反應而製成。第3型之感光性樹脂可在上述有 機溶劑中、在酸性觸媒之存在下’將式(14)所示化合物及 式(13)所示化合物加成至聚羥基苯乙稀中之後,添加鹼性 觸媒及式(15)所示化合物經反應而製成。第4型之感光性 樹脂,可在上述有機溶劑中、在酸性觸媒之存在下,將式 (14)所示化合物及式(13)所示化合物加成至聚(經基苯乙 烯-苯乙烯)中而製成。第5型之感光性樹脂,可在上述有 機溶劑中、在酸性觸媒之存在下,將式(13)所示化合物加 成至聚(羥基苯乙烯-苯乙烯)中後,添加鹼性觸媒及式(丨5 ) 所示化合物經反應而製成。第6型之感光性樹脂,可在上 319750 22 200922947 » 述有機溶劑中、在酸性觸媒之存在下,將式(丨所示化合 物及式(13)所示化合物加成至聚(羥基苯乙烯_苯乙烯)中 後,添加鹼性觸媒及式(丨5)所示化合物經反應而製成。 [表1] ^ ' ------- 樹脂架構中所具有重複單位之有無The compound represented by the formula (13) and the copolymer of polyhydroxystyrene or poly(p-styrene-styrene) are contained in an organic solvent such as 1,3-dioxanane. When reacting under an acidic catalyst, a repeating unit represented by the above formula (1) can be introduced. The repeating unit represented by the formula (2) may be a copolymer of hydroxystyrene or poly(hydroxystyrene-styrene) and a vinyl ether compound represented by the following formula (14) in an organic solvent such as a 1 '3-dioxolane ring. " Addition reaction in the presence of medium and acidic catalysts. (R8 represents a linear or branched hydrocarbon group having 2 to 9 carbon atoms.) The repeating unit represented by the formula (3) can be represented by the following formula (15): di-dibutyl phthalate and poly! A copolymer of styrene or poly(hydroxystyrene-styrene) is produced by reacting in an organic solvent such as hydrazine or 3-oxapentane with a basic catalyst. ^〇Λ〇Λ〇ν (15) Further 5 i A polymer having a repeating unit represented by the formula (1) to (5) is suitable. The 319750 21 200922947 reaction is also carried out to produce the photosensitive resin of the present invention. The monomer of the repeating unit shown in (5) is copolymerized by the formula (1) in the organic solution a, and can also be used to form a polymerization initiator solvent such as tetrahydrogen, and /3 -, photosensitive resin. The organic burning (di◦), etc. n '-ring and 1,3-dioxin, photopolymerization initiator, oxidation two: triggering convenience, reaction speed and easy (10) v 4, can be considered treatment Gu Yi adjusts the molecular weight and so on and chooses it appropriately. Specific manufacturing methods are exemplified below. About the first shown in the list below! The photosensitive resin is prepared by, for example, adding a compound represented by the formula (10) and a compound of the formula (13) to a polyphenylene bromide in the presence of an acidic catalyst in the above organic solvent. Further, the second type of sensitizing resin may be added to the polypyridylbenzene-ene in the presence of an acidic catalyst in the organic solvent in the presence of an acidic catalyst, and then the test catalyst and the formula may be added. (The compound represented by (5) is prepared by reacting. The photosensitive resin of the third type can be added to the compound represented by the formula (14) and the compound represented by the formula (13) in the presence of an acidic catalyst in the above organic solvent. After being formed into polyhydroxystyrene, a basic catalyst and a compound represented by the formula (15) are added and reacted. The photosensitive resin of the fourth type can be present in the above organic solvent in the presence of an acidic catalyst. Next, a compound represented by the formula (14) and a compound of the formula (13) are added to poly(p-styrene-styrene) to prepare a photosensitive resin of the fifth type in the above organic solvent. Adding a compound represented by the formula (13) to poly(hydroxystyrene-styrene) in the presence of an acidic catalyst, and adding a basic catalyst and a compound represented by the formula (丨5) are reacted. Form 6. Type of photosensitive resin, can be used in the above organic solvent, in the organic solvent, 319750 22 200922947 In the presence of the compound of the formula (III) and the compound of the formula (13), the compound is added to the poly(hydroxystyrene-styrene), and the basic catalyst and the compound represented by the formula (丨5) are reacted. And made. [Table 1] ^ ' ------- The presence or absence of repeating units in the resin structure

(〇示有,一示無) 上述將本發明.之感光性樹脂溶解於有機溶劑者,係為 ^發明之感純組成物。本發明之感光性樹脂具有做為光 產酸劑作社㈣及酸解離基,所以藉由溶解於溶劑,可 =含有產酸劑之情形下,本身單獨成為化學放大型之感 =組成物。因此,不會伴生產酸劑及具有酸解離基之聚 S物之間之互溶性不良之問題,可以形成均—溶液之感光 性組成物,藉使用此而形成所期待之圖案。 & 美酸Γ吏用於感光性組成物之有機溶劑,例如乙二醇單院 ❹類、乙—醇㈣絲乙酸酉旨類、二乙二醇二烧基醚乙 丙“醇、=::早,_、丙二醇單燒基鍵乙_員及 丙U基醚乙酸醋類。感光性組成物中所含本發明之 319750 23 200922947 感光性樹脂之比率,可在感光性樹脂可溶解範圍内適當選 擇使用’ 一般在3至30重量%為佳。 …於本鲞明之感光性組成物中,較宜使用能控制藉由曝 光而從上式⑴所示重複單位產生之酸在光阻膜中之擴散 現象、而具有能抑制在未曝光區域中之不適宜之化學反應 之作用等之所謂酸擴散控制劑。該酸擴散控制劑以不會因 為曝光或加熱而鹼性發生變化之含氮有機化合物為佳。 又,該酸擴散控制劑之使用量,相對於感光性樹脂,一般 制〇._至5重量%。使用量過多時,做為光阻之感度和 顯像性有降低之傾向,相反地,過少時,做為光阻之解像 度、工序安定性等之改善效果會不足。 又,本發明之感光性組成物中,可因應需要調配界面 活化劑、敏化劑、消泡劑等各種添加劑。 從本發明之嘁光性組成物形成光阻圖案時,藉旋轉塗 布法、流鑄塗布法等適當塗布方法將感光性組成物塗布在 如矽晶片等基板上,形成光阻膜,必要時先行加熱處理後, 隔介具有預定圖案之光罩而進行曝光。此時所使用之活性 輻射線隨圖案之微細程度、感光性組成物之感度,而從深 紫外線、電子束、X光或EUV(極紫外光)等中適當選擇使衣 用。又,曝光量等曝光條件隨組成物之配方組成,各種添 力土口劑之種類等而適當選擇即可。以曝光後進行加熱處理: 佳,其加熱條件視組成物之配方組成、各種添加劑之 等而適當選擇即可。 犬、 其次,可將曝光過之光阻膜,藉由鹼顯像液顯像而形 319750 24 200922947 成預定之光阻圖案。該鹼磲億 ., 像液之例如鹼金屬氫4介舲 氣水、單、二或三烧基胺類、 、 .. 、 氯氧化四炫基銨類、勝仏望 釦性化合物,且通常溶解成為1至 、膽以 V* 里里4 /辰度之驗性太、、交 液。又,使用該驗性水溶液所構成 後 後進行水洗處理。 般在顯像 [實施例] 藉由實施例說明本發明如下,惟本發明不偈限於此等 之例。 寸 (合成例1 ) ^下式所示化合物(4—乙烯氧基乙氧基苯基二苯基毓全 氟丁烷磺酸鹽)之合成:(There is no indication) If the photosensitive resin of the present invention is dissolved in an organic solvent, it is a pure composition of the invention. Since the photosensitive resin of the present invention has a photoacid generator as the photoacid generator (IV) and an acid dissociation group, when it is dissolved in a solvent, it can be used as an acid generator, and it is a chemically amplified type of composition alone. Therefore, the problem of poor mutual solubility between the acid generating agent and the poly-S material having an acid dissociating group is not caused, and a photosensitive composition of a homogeneous solution can be formed, whereby the desired pattern can be formed. & Sodium citrate is used as an organic solvent for photosensitive compositions, such as ethylene glycol monoterpenoids, ethyl alcohol (tetra) acetazide, diethylene glycol dialkyl ether, ethyl alcohol, alcohol, =: : early, _, propylene glycol monoalkyl bond, acetonide, and propyl urethane acetate. The ratio of the photosensitive resin of the present invention contained in the photosensitive composition of 319750 23 200922947 may be within the range of solubility of the photosensitive resin. It is preferable to use ' generally in the range of 3 to 30% by weight. ... In the photosensitive composition of the present invention, it is preferred to use an acid which can be controlled from the repeating unit represented by the above formula (1) by exposure in the photoresist film. a so-called acid diffusion controlling agent having a diffusion phenomenon and an action of suppressing an unsuitable chemical reaction in an unexposed region, etc. The acid diffusion controlling agent is a nitrogen-containing organic substance which does not change in alkalinity due to exposure or heating. Further, the amount of the acid diffusion controlling agent used is generally 〇 to 5% by weight based on the photosensitive resin. When the amount used is too large, the sensitivity and developability of the resist are lowered. Conversely, when there are too few, as a photoresist Further, in the photosensitive composition of the present invention, various additives such as an interface activator, a sensitizer, and an antifoaming agent may be blended as needed in the photosensitive composition of the present invention. When the photoresist pattern is formed, the photosensitive composition is applied onto a substrate such as a germanium wafer by a suitable coating method such as a spin coating method or a flow casting coating method to form a photoresist film, and if necessary, the heat treatment is performed, and the spacer has a predetermined property. The reticle of the pattern is exposed, and the active radiation used at this time is appropriately selected from deep ultraviolet rays, electron beams, X-rays, or EUV (extreme ultraviolet light) depending on the degree of the fineness of the pattern and the sensitivity of the photosensitive composition. Further, the exposure conditions such as the exposure amount may be appropriately selected depending on the composition of the composition, various types of soiling agents, etc., and heat treatment after exposure: preferably, the heating conditions are determined by the composition of the composition. The composition, various additives, etc. can be appropriately selected. Dogs, secondly, the exposed photoresist film can be imaged by alkali imaging liquid to form 319750 24 200922947 Photoresist pattern. The alkali such as liquid, such as alkali metal hydrogen 4 舲 gas water, mono-, di- or tri-alkyl amines, .., chloroammonium oxychloride, wins and turns The compound is usually dissolved in 1 to 2, and the bile is tested in the V* lining 4/time degree, and the liquid is mixed. Further, it is formed by using the aqueous test solution and then subjected to a water washing treatment. The present invention is illustrated by the following examples, but the present invention is not limited to such examples. Inches (Synthesis Example 1) ^ Compound represented by the following formula (4-vinyloxyethoxyphenyldiphenylfluorene perfluoro) Synthesis of butane sulfonate):

溶解52. 2g之4-羥基苯基二苯基毓全氟丁烷磺酸鹽、 18· 〇g之碳酸鉀及1. 〇5g之N,Ν,Ν’,Ν’ -四甲基乙二胺於 26· lg之二甲亞砜中。之後,添加Μ. 9g之氯乙基乙烯醚, 升溫至80°C。攪拌15小時,反應液冷卻至301:以下。過 慮去除固形物後,加入10Og之水,使用10Og之己烧洗淨 水層3次。加入209g之二氣曱烷及260g之水,攪拌後萃 25 319750 200922947 * 取目私物至二氯甲烷層中。用蒸餾水重複洗淨有機層直到 分離之水層呈現p H 7。用旋轉蒸散器蒸餾去除溶劑而θ得 69· 9g之油狀物質。藉ih_nmr及離子層析法測定結果,確 認該物質為4-乙烯氧基乙氧基苯基二苯基毓全氟丁烷確 Η — N M R 24 (d, J 4 9 (d d , 2H), 7.Dissolving 52.2 g of 4-hydroxyphenyldiphenylphosphonium perfluorobutanesulfonate, 18·〇g of potassium carbonate and 1. 〇5g of N, Ν, Ν', Ν'-tetramethylethylene The amine is in 26 lg of dimethyl sulfoxide. Thereafter, 9 g of chloroethyl vinyl ether was added and the temperature was raised to 80 °C. After stirring for 15 hours, the reaction liquid was cooled to 301: or less. After removing the solid matter, 10 Og of water was added, and the aqueous layer was washed 3 times with 10 Og of the hexane. Add 209 g of dioxane and 260 g of water, stir and extract 25 319750 200922947 * Take a private product into the dichloromethane layer. The organic layer was washed repeatedly with distilled water until the separated aqueous layer exhibited p H 7 . The solvent was distilled off by a rotary evaporator to obtain 69. 9 g of an oily substance. The result was determined by ih_nmr and ion chromatography, and it was confirmed that the substance was 4-vinyloxyethoxyphenyldiphenylphosphonium perfluorobutane. NMR 24 (d, J 4 9 (dd , 2H), 7 .

4 4 7 Μ Η z , C D C 1 3) <5 4 . 2.4 Hz, 1 H) , 4. 4,7 · 4 Hz, 1 H), 7 4 (m, 1 2 H)4 4 7 Μ Η z , C D C 1 3) <5 4 . 2.4 Hz, 1 H) , 4. 4,7 · 4 Hz, 1 H), 7 4 (m, 1 2 H)

ί (合成例2) 下式所示化合物(4 -乙細氧基乙氧基3,二曱基苯基 二(4-第三丁基苯基)毓全氟丁烷磺酸鹽)之合成:ί (Synthesis Example 2) Synthesis of a compound of the formula (4-ethoxyoxyethoxy 3, dinonylphenyl bis(4-t-butylphenyl)phosphonium perfluorobutane sulfonate) :

溶解28. 6g之4-羥基3, 5-二曱基苯基二(4-第三丁基 笨基)鏡全氟丁烧續酸鹽、8.10g之碳酸钾及〇.46g之 N,N,N ’N’-四甲基乙二胺於i42g之二甲亞砜中。然後,添 加6. 08g之氣乙基乙烯醚,升溫至8(rc。攪拌19小時, 反應液冷卻至30。(:以下。藉過濾去除固形物後,加入20. 9g 之水’使用85.1g之己燒洗淨水層3次。加入226g之二氯 26 319750 200922947 曱烧及141g之水’攪拌後萃取目標物至二氯曱烷層中。使 用蒸餾水重複洗淨有機層直到分離之水呈現pH7為止。用 旋轉蒸散器蒸餾去除溶劑’而得27. 4g之褐色油狀物。該 物質經^-NMR及離子層析法測定結果,確認為4-乙烯氧 基乙氧基3, 5-二曱苯基二(4-第三丁基苯基)毓全氟丁烷 石备酸鹽。 ,H6mMR4 〇V°. CDCIs) δ1- 35 (s· 18H) > 2· 36 (s 5 (d 'jil! ;4«〇f (m> 3H) 4· 12-4· 14 (m, 2H) , 4. 2Dissolving 28. 6 g of 4-hydroxy 3,5-dimercaptophenyl bis(4-tert-butylphenyl) mirror perfluorobutanic acid anhydride, 8.10 g of potassium carbonate and 〇.46 g of N, N , N 'N'-tetramethylethylenediamine in i42 g of dimethyl sulfoxide. Then, 6. 0g of ethyl vinyl ether was added, and the temperature was raised to 8 (rc. Stir for 19 hours, and the reaction liquid was cooled to 30. (: The following. After removing the solid matter by filtration, adding 20.9 g of water' using 85.1 g The washed water layer was washed three times. Add 226 g of dichloro 26 319750 200922947 曱 and 141 g of water 'after stirring, extract the target into the chloroform layer. Repeat the washing of the organic layer with distilled water until the separated water is present. The solvent was distilled off by a rotary evacuator to obtain 27.4 g of a brown oil. The product was confirmed to be 4-vinyloxyethoxy 3, 5-. Diphenyl bis(4-tert-butylphenyl)phosphonium perfluorobutane salt. H6mMR4 〇V°. CDCIs) δ1- 35 (s· 18H) > 2· 36 (s 5 ( d 'jil! ;4«〇f (m> 3H) 4· 12-4· 14 (m, 2H) , 4. 2

Hz' 1H) 7 HZ,1H) ' 6> 50 (dd> ^ = 1^. 3, 6. 6Hz' 1H) 7 HZ,1H) ' 6> 50 (dd> ^ = 1^. 3, 6. 6

Hz- 1H) ,7.35 <s, 2H) , 7. 5 9 - 7. 7 5 (m, 8 H) (合成例3) 下式所示化合物(4-乙烯氧基辛氧基苯基二苯基毓全 氟丁貌續酸鹽)之合成:Hz-1H), 7.35 <s, 2H), 7. 5 9 - 7. 7 5 (m, 8 H) (Synthesis Example 3) Compound of the formula: 4-vinyloxyoctyloxyphenyl Synthesis of phenylhydrazine perfluorobutanide):

Η ^Ίο—clo 將1.23g之8_氯_ι_辛醇、之碳酸鈉、〇47g· 一#氯雙[77-環辛二烯銥(1)]及1.31§之乙酸乙烯酯i 入6. 15g之甲苯中,在1〇(rc下攪拌4小時。冷卻至室泣 後,裔餾去除溶劑,使用己烷及二氣甲烷之混合溶劑(己) 319750 27 200922947 及一虱甲烷之體積比為2 : 1)之管柱層析法精製,而得 1.16g之無色透明液之8_氯辛基乙烯醚。 溶解2. 67g之4-羥基苯基二苯基毓全氟丁烷磺酸鹽、 〇.78g之碳酸鉀及0.05g之N,N,N,,N’—四曱基乙二胺於 13.3g之二甲亞砜中。然後,添加1〇5§之8_氯辛基乙烯 醚,升溫至8(TC。攪拌15小時後,冷卻反應液至3(rc以 下。藉過瀘、去除固开)物後,加入13· 3g之水,用7. 96g之 己烷洗淨水層3次。加入1〇. 之二氯甲烷及水,經攪拌 後萃取目標物至m層中。用蒸顧水重複洗淨有機層 至分離之水呈現ΡΗ7·0為止。利用旋轉蒸散器蒸餾去除溶 劑’而得2. 53g之褐色油狀物質。該物質藉lH_NMR及離子 層析法測定結果,確認為4-乙烯氧基辛氧基苯基二苯基毓 全氟丁烷磺酸鹽。 1 H —NMR .6 4-1. 6 . 6 Η ζ (t , J = 6 ),6.46 (4 0 0 6 7 (m, ,2H), .6 Hz (d d , MHz,- CD C Ls) 2 H) , 1 . 7 8-1. 3. 9 6 (d d , J = 6 2H) , 7. 6 5 - 7. 7 6 (m, 1 2H) ^ 1 · 3 6 - 1. 4 7 (m, 8 H: 8 3 (m, 2H),3. 6 7 ( t , 2H) - 4. 1 6 (dd8'ji'i4. 4Z,1H) ' 4· J = 14. 4,6.8 Ηζ,ΐΗ), ?.、 2 6 0 7Η ^Ίο-clo 1.23g of 8-chloro-I-octyl alcohol, sodium carbonate, strontium 47g·## chlorobis[77-cyclooctadiene oxime (1)] and 1.31 § vinyl acetate i 6. In 15 g of toluene, stir at 1 Torr (rc for 4 hours). After cooling to room, the solvent is removed by distillation, and a mixed solvent of hexane and di-methane (hexane) 319750 27 200922947 and a volume of methane are used. Purification by column chromatography of 2:1) gave 1.16 g of 8-chlorooctyl vinyl ether as a colorless transparent liquid. Dissolving 2.67g of 4-hydroxyphenyldiphenylphosphonium perfluorobutanesulfonate, 7878g of potassium carbonate and 0.05g of N,N,N,,N'-tetradecylethylenediamine at 13.3 g in dimethyl sulfoxide. Then, add 1〇5§ of 8_chlorooctyl vinyl ether, and raise the temperature to 8 (TC. After stirring for 15 hours, cool the reaction solution to 3 (rc or less. By using hydrazine, remove the solidification), then add 13· 3 g of water, the aqueous layer was washed three times with 7.96 g of hexane. After adding 1 m. of dichloromethane and water, the target was extracted into the m layer with stirring, and the organic layer was repeatedly washed with steam to the water. The separated water was subjected to ΡΗ7·0. The solvent was distilled off by a rotary evacuator to obtain 2.53 g of a brown oily substance. The material was confirmed to be 4-vinyloxyoctyloxy group by lH_NMR and ion chromatography. Phenyldiphenylphosphonium perfluorobutane sulfonate 1 H-NMR .6 4-1. 6 . 6 Η ζ (t , J = 6 ), 6.46 (4 0 0 6 7 (m, , 2H) , .6 Hz (dd , MHz, - CD C Ls) 2 H) , 1. 7 8-1. 3. 9 6 (dd , J = 6 2H) , 7. 6 5 - 7. 7 6 (m, 1 2H) ^ 1 · 3 6 - 1. 4 7 (m, 8 H: 8 3 (m, 2H), 3. 6 7 ( t , 2H) - 4. 1 6 (dd8'ji'i4. 4Z, 1H) ' 4· J = 14. 4,6.8 Ηζ,ΐΗ), ?., 2 6 0 7

Hz 19 ,1 J = 0 4 1H (m, (合成例4) 下式所示化合物(4-乙烯氧基乙氧基苯基二苯基銃環 (1,3-全氟丙烷二磺醯)亞胺鹽)之合成: 319750 28 200922947Hz 19 ,1 J = 0 4 1H (m, (Synthesis Example 4) Compound of the formula: 4-vinyloxyethoxyphenyldiphenylfluorene ring (1,3-perfluoropropane disulfonate) Synthesis of imine salts): 319750 28 200922947

〇2fN'so2 f2c、xf2 浴% 4.66g之五氧化二填及13.3g之二苯亞硬於 63.1g之甲續酸之後,投入9.26g之苯齡,在室温下擾掉 15小時。保持3〇°C以下溫度下滴入199g之水,用66. 4g 之第三丁基甲基醚洗淨水層3次之後,再投入12〇g之二氯 曱烷及23· 9g之環1,3-全氟丙烷二磺醯亞胺鉀鹽,並授拌 2小時。終止攪拌,去除分離之水層後,加入66. 4g之〇. 1 重量%之氨水溶液並攪拌。然後,用蒸餾水洗淨有機層重複 r 至匀離之水層呈現pH 7.0為止。用旋轉蒸散器蒸德去除溶 劑,而得32. lg之褐色油狀之4-羥基苯基二苯基毓環(1,3-全氟丙烷二磺醯)亞胺鹽。 溶解32. lg之4-羥基苯基二苯基毓環(1,3-全氟丙烷 一石黃醯)亞胺鹽、11.2g之碳_酸_及0.67g之N,N,N,,N,-四甲基乙二胺於164g之二甲亞砜中。然後,添加8. 65g 之氯乙基乙烯醚,升溫至8(TC。攪拌15小時,冷卻反應 液至30C以下。藉過濾去除固形物後,加入8〇g之水,用 40g之己炫洗淨水層3次。加入120g之二氯曱烧及260g 319750 29 200922947 ,水並進行擾拌後,萃取目標物至二氯甲謝。用跋館 水重複洗淨有機層至分離之水呈現pH7為止。以_ 器蒸德去除溶劑,而得29.lg之油狀物質。該物質以^r =離子層析法敎結果,確知係4_乙料基乙孰基苯基二 苯基毓環(1,3-全氟丙烷二磺醯)亞胺鹽。 H-NMR (4〇〇 2 4 (d,J = 7 . 4 , 49 (dd, J = i4. 2H) , 7. 6 4-7. 0 5-4. 〇 8 (m, 3 H) , 4 3 1 - 4 . 3 3 (m, 2 H) 6 7. 24 (d, J = 6. 8 Η ε MHz, CDC 】3) 5 4 2. 4 Hz, 1H) , 4, 4> 7 · 4 Hz, 1 H), 7 4 (m, 1 2 H) (合成例5) 下式所示化合物(4-乙烯氧基乙氧基苯基二苯基毓雙 (全氟甲烷磺醯)亞胺鹽)之合成: &〇2fN'so2 f2c, xf2 bath% 4.66g of pentoxide and 13.3g of diphenyl benzoate were harder than 63.1g of methic acid, and 9.26g of benzene was charged and was disturbed for 15 hours at room temperature. 199 g of water was added dropwise at a temperature of 3 ° C or lower, and the aqueous layer was washed 3 times with 66.4 g of the third butyl methyl ether, and then 12 g of dichloromethane and 23.9 g of ring 1 were added. 3-Perfluoropropane disulfonimide potassium salt and allowed to mix for 2 hours. After the stirring was terminated and the separated aqueous layer was removed, 66. 4 g of a 1% by weight aqueous ammonia solution was added and stirred. Then, the organic layer was washed with distilled water to repeat r until the aqueous layer was separated to pH 7.0. The solvent was removed by a rotary evaporator to give a brown oily 4-hydroxyphenyldiphenylsulfonium (1,3-perfluoropropanedisulfonium)imide salt. Dissolving 32. lg of 4-hydroxyphenyldiphenylfluorene ring (1,3-perfluoropropane-stone), imine salt, 11.2 g of carbon-acid_ and 0.67 g of N, N, N, N ,-Tetramethylethylenediamine in 164 g of dimethyl sulfoxide. Then, 8.65 g of chloroethyl vinyl ether was added, and the temperature was raised to 8 (TC. The mixture was stirred for 15 hours, and the reaction liquid was cooled to 30 C or less. After removing the solid matter by filtration, 8 g of water was added, and 40 g of water was used for washing. 3 times of water purification layer. Add 120g of dichlorohydrazine and 260g of 319750 29 200922947, and then scramble the water, then extract the target to diclofenac. Repeat the washing of the organic layer with water to the separated water to pH7. So far, the solvent was removed by steam distillation to obtain 29. g of an oily substance. The substance was subjected to ^r = ion chromatography, and it was confirmed that it was a 4-ethylidene phenylphenyl diphenyl fluorene ring. (1,3-perfluoropropane disulfonium) imine salt. H-NMR (4〇〇2 4 (d, J = 7.4, 49 (dd, J = i4. 2H), 7. 6 4- 7. 0 5-4. 〇8 (m, 3 H) , 4 3 1 - 4 . 3 3 (m, 2 H) 6 7. 24 (d, J = 6. 8 Η ε MHz, CDC 】 3) 5 4 2. 4 Hz, 1H), 4, 4> 7 · 4 Hz, 1 H), 7 4 (m, 1 2 H) (Synthesis Example 5) Compound of the formula: 4-vinyloxyethoxy Synthesis of phenyldiphenylphosphonium bis(perfluoromethanesulfonyl)imide salt: &

02S"NsS〇2 CF3 0F3 溶解2.33g之五氧化二構及6.6 5g之二苯亞;ε風於 31· 5g之甲磺酸後,加入4. 80g之苯酚’在室溫下授掉15 小時。保持在30°C以下滴入之水,用30g之第三丁 基曱基醚洗淨水層3次之後,加入6〇g之二氣甲烷及u. 6g 之雙(全氟甲烷磺醯亞胺)鉀鹽’並攪拌2小時。終止授拌, 除去分離之水層後,加入之〇· 1重量%之氨水,並攪拌 319750 30 200922947 之。其次’用蒸餾水重複洗淨有機層至分離之水層呈現pH7 為止。用旋轉蒸散器蒸餾去除溶劑,而得16.。之褐色油 狀之4 -經基本基二苯基鏡雙(全氟曱焼磺醢)亞胺鹽。 溶解16g之4-羥基苯基二苯基毓雙(全氟曱烷磺醯)亞 胺鹽、4.7g之碳酸鉀及〇.33g之N,N,N,,N,-四甲基乙二胺 於8Og之二曱亞砜中。然後’添加& 66g之氯乙基乙烯醚, 升溫至80°C。攪拌15小時,冷卻反應液至以下。經 過濾去除固形物後,加入4〇g之水,用3〇g之己烧洗淨水 層3次。加入60g之二氯曱烷及12〇g之水,攪拌後萃取目 標物至二氣曱烷層中。用蒸餾水洗淨有機層重複至分離之 水呈現pH7為止。以旋轉蒸散器蒸餾去除溶劑,而得14.紅 之油狀物質。該物質藉iH_NMR及離子層析法測定結果,確 知為4-乙烯氧基乙氧基苯基二苯基毓二(全氟曱烷磺醯) 亞胺鹽。 .. H-NMR (4〇〇 2 4 ( d,J = 7 . 4 , 49 (dd,J = 1 4 ' 2 Η) , 7 . 6 4-7. ΜΗ ζ , CDC 1 3) <5 4. 0 5 2· 4 Η ζ , 1 Η) , 4. 31 4, 7. 4 Hz, 1Η) , 7. 7 4 (m, 1 2 Η) ~ 4 · 〇 8 (ιη, 3 Η) —4. 3 3 (m, 2Η) 2 4 (d,J = 6 8 ,4. ,6 . Η ζ, (合成例β) 一 j-乙烯氧基乙氧基苯基二(4_第三丁基苯基)毓2, 4, 6 -二異丙基苯磺酸鹽之合成 319750 31 20092294702S"NsS〇2 CF3 0F3 dissolves 2.33g of pentoxide and 6.6 5g of diphenyl argon; ε wind after 3·5g of methanesulfonic acid, adds 4.80g of phenol' at room temperature for 15 hours . The water was added dropwise at a temperature below 30 ° C, and the aqueous layer was washed three times with 30 g of t-butyl decyl ether. Then, 6 g of methane and 6 g of bis (perfluoromethanesulfonate) were added. Amine) potassium salt 'and stirred for 2 hours. The mixing was terminated, and after the separated aqueous layer was removed, 1% by weight of aqueous ammonia was added and stirred at 319750 30 200922947. Next, the organic layer was repeatedly washed with distilled water until the separated aqueous layer showed pH 7. The solvent was distilled off by a rotary evacuol to give 16. The brown oily form 4 - the basic diphenyl mirror bis(perfluorosulfonium sulfonate) imide salt. Dissolve 16g of 4-hydroxyphenyldiphenylfluorene bis(perfluorodecanesulfonyl)imide salt, 4.7g of potassium carbonate and 〇.33g of N,N,N,,N,-tetramethylethylene The amine is in 8Og of disulfoxide. Then, <66 g of chloroethyl vinyl ether was added and the temperature was raised to 80 °C. After stirring for 15 hours, the reaction liquid was cooled to the following. After removing the solid matter by filtration, 4 g of water was added, and the aqueous layer was washed 3 times with 3 g of the hexane. 60 g of dichloromethane and 12 g of water were added, and the target was extracted into a dioxane layer with stirring. The organic layer was washed with distilled water and repeated until the separated water appeared to pH 7. The solvent was distilled off by a rotary evaporator to give a red oily substance. The substance was identified by iH_NMR and ion chromatography to be 4-ethyloxyethoxyphenyldiphenylphosphonium (perfluorodecanesulfonyl)imide salt. .. H-NMR (4〇〇2 4 (d, J = 7. 4, 49 (dd, J = 1 4 ' 2 Η), 7. 6 4-7. ΜΗ ζ , CDC 1 3) <5 4. 0 5 2· 4 Η ζ , 1 Η) , 4. 31 4, 7. 4 Hz, 1Η) , 7. 7 4 (m, 1 2 Η) ~ 4 · 〇8 (ιη, 3 Η) — 4. 3 3 (m, 2Η) 2 4 (d, J = 6 8 , 4., 6. Η ζ, (synthesis example β) a j-vinyloxyethoxy phenyl di(4_third butyl) Synthesis of phenyl 2,4,6-diisopropylbenzenesulfonate 319750 31 200922947

溶解5. Og之4-羥基笨基二(4-第三丁基苯基)锍2, 4, 6 -三異丙基苯磺酸鹽、丨.28g之碳酸鉀及0. l〇g之N,N,N,,N, -四甲基乙二胺於15g之二甲亞砜中。然後,添加〇. 83g 之氯乙基乙烯醚,升溫至8(TC。攪拌15小時,冷卻反應 液至30°C以下。過濾而去除固形物之後,.加入75g之水及 44g之二氯甲燒,萃取目標物至二氯甲烧層中。用蒸餾水 重複洗淨有機層至分離之水呈現pH7為止。以旋轉蒸散器 瘵德去除溶劑,溶解所得油狀物於2Og之乙腈,用15g之 己烷洗淨乙腈層5次。再用旋轉蒸散器蒸餾去除溶劑,而 得4.64g之褐色油狀物質。該物質藉lH_NMR及離子層析法 =定結果,確知為4—乙烯氧基乙氧基苯基二(4_第三丁基 苯基)銃2, 4, 6~三異丙基苯磺酸鹽。 H-NMR Η) , 1 . 3 2 2-4. 0 8 • 2 9 — 4.3 〇 (d d , J = • 2 6 (m, 2〇的的的。 Ig, 5-hydroxyphenyl bis(4-t-butylphenyl) fluorene 2, 4,6-triisopropylbenzenesulfonate, 28.28g of potassium carbonate and 0. l〇g N, N, N, N, - tetramethylethylenediamine in 15 g of dimethyl sulfoxide. Then, add 83 g of chloroethyl vinyl ether, and raise the temperature to 8 (TC. Stir for 15 hours, cool the reaction solution to below 30 ° C. After filtration to remove the solid matter, add 75 g of water and 44 g of dichloromethane. The target is poured into a methylene chloride layer, and the organic layer is repeatedly washed with distilled water until the separated water is at pH 7. The solvent is removed by rotary evacuol, and the obtained oil is dissolved in 2Og of acetonitrile, and 15 g is used. The acetonitrile layer was washed five times with hexane, and the solvent was evaporated to give 4.46 g of brown oily material. The material was determined by lH_NMR and ion chromatography to confirm that it was 4-ethyloxy ethoxylate. Phenyl phenyl bis(4_t-butylphenyl) fluorene 2, 4, 6-triisopropylbenzene sulfonate. H-NMR Η), 1. 3 2 2-4. 0 8 • 2 9 — 4.3 〇 (dd , J = • 2 6 (m, 2

I T_J — kt W 皿 3) <5 1 · 2 1 (d, (sep, J = 6 .( P» J = 6 . .7.02 1 0 H) i, J = 6. 8 Hz, 18 8 Hz, 1 H) , 4. 〇 2.4 Hz, 1 H) , 4 8 Hz, 2 H) , 6. 5 (s , 2 H) , 7,24 — 7 319750 32 200922947 (合成例7) 4-乙烯氧基乙氧基苯基二苯基毓2, 4, 6-三異丙基苯 磺酸鹽之合成:I T_J — kt W Dish 3) <5 1 · 2 1 (d, (sep, J = 6 . ( P» J = 6 . .7.02 1 0 H) i, J = 6. 8 Hz, 18 8 Hz , 1 H) , 4. 〇 2.4 Hz, 1 H) , 4 8 Hz, 2 H) , 6. 5 (s , 2 H) , 7,24 — 7 319750 32 200922947 (Synthesis Example 7) 4-Vinyl Oxygen Synthesis of ethoxylated phenyldiphenyl sulfonium 2,4,6-triisopropylbenzenesulfonate:

溶解8· 00g之4-經基苯基二苯基蔬2, 4, 6-三異丙基苯 磺酸鹽、2. 46g之碳酸鉀及〇. 16g之Ν,Ν,Ν’,Ν’ -四曱基乙 二胺於24.00g之二曱亞砜中。然後,添加1.59g之氣乙基 乙烯醚,升溫至8(TC。攪拌15小時,冷卻反應液至301: 以下。過渡去除固形物後,加入160g之水及64g之二氯甲 烧’萃取目標物至二氯曱烷層中。用蒸餾水重複洗淨有機 詹至分離之水層呈現pjj7為止。藉旋轉蒸散器蒸餾去除溶 劑’溶解所得油狀物於32g之乙腈中’使用24g之己烷洗 淨乙腈層5次。以旋轉蒸散器蒸餾去除溶劑,而得9. 84g 之褐色油狀物質。該物質以iH_NMR及離子層析法測定結 果’確知為4-乙烯氧基乙氧基苯基二苯基毓2,4,6_三異丙 基苯續酸鹽。 319750 33 200922947 …一NMR ( 4 Ο Ο ΜΗ z sep,1 Η) , 4. 0 2 — 4 -4. 3 1 (m, 2 Η) , 4. 2 (s,2 Η) , 7. 2 4-7Dissolving 8·00g of 4-pyridyldiphenyl vegetable 2,4,6-triisopropylbenzenesulfonate, 2.46g of potassium carbonate and cesium. 16g of Ν, Ν, Ν', Ν' - Tetradecylethylenediamine in 24.00 g of disulfoxide. Then, 1.59 g of gaseous ethyl vinyl ether was added, and the temperature was raised to 8 (TC. Stir for 15 hours, and the reaction liquid was cooled to 301: or less. After the transition to remove the solid matter, 160 g of water and 64 g of methylene chloride were added to extract the target. To the dichloromethane layer, the organic layer was washed repeatedly with distilled water until the separated aqueous layer appeared to be pjj7. The solvent was distilled off by a rotary distiller to dissolve the obtained oil in 32 g of acetonitrile using 24 g of hexane. The net acetonitrile layer was removed 5 times. The solvent was evaporated to give a white oily substance of 9.84 g. The material was determined by iH_NMR and ion chromatography to confirm that it was 4-vinyloxyethoxyphenyl Phenylhydrazine 2,4,6-triisopropylbenzene hydrochloride. 319750 33 200922947 ... NMR ( 4 Ο Ο ΜΗ z sep,1 Η) , 4. 0 2 — 4 -4. 3 1 (m, 2 Η) , 4. 2 (s, 2 Η) , 7. 2 4-7

(合成例8) 4-乙烯氧基 鹽之合成: 氧基苯基二苯基毓2-三氟曱基苯磺 酸(Synthesis Example 8) Synthesis of 4-vinyloxy salt: oxyphenyldiphenylphosphonium 2-trifluorodecylbenzenesulfonic acid

- 溶解3. OOg之五氧化二磷及.8· Olg之二苯亞瑕於 38. llg之甲磺酸之後’加入5· 75g之苯酚,在室溫下授丰 15小時。保持在3〇。(:以下滴入120g之水,用4〇g之第_ 丁基甲基醚洗淨水層3次後加入80g之二氯甲燒及u 之2二氟曱基苯續酸钟鹽’並授摔2小時。終止授掉,g 除分離之水層後,加入28g之0. 1重量%之氨水溶液並授 拌。終止攪摔’去除分離之水層後,重複此步驟至分離之 水層呈現PH7為止。用旋轉蒸散器蒸餾去除溶劑,而得 10. 33g之白色粉末之4-羥基苯基二苯基銃2~三氟甲基苯 $黃酸鹽。 溶解8· Olg之4-經基苯基二苯基蔬三氟甲基笨石备越 319750 34 200922947 鹽、2. 74g之碳酸鉀及〇. I8g之N,N,N,,N,-四甲基乙二胺 於36g之二甲亞砜中。然後,加入5. 3ig之氯乙基乙烯醚, 升溫至8(TC。攪拌15小時,冷卻反應液至3(TC以下。過 濾去除固形物後,加入4〇g之水,使用30g之己烷洗淨水 層3次。加入30g之二氯甲烷及6〇g之水,經攪拌後萃取 目標物至二氯f烷層中。使用蒸餾水重複洗淨有機層至分 離之水層呈現pH7為止。利用旋詞 得3. 7g油狀物質。該物質以丨 果’確知為4-乙稀氧基乙氧基笨基 利用旋轉蒸散器蒸餾去除溶劑而 t以1H-NMR及離子層析法測定結 續酸鹽。 二苯基銃2 -三氟甲基笨- Dissolving 3. OOg of phosphorus pentoxide and .8· Olg of diphenylarsin after 38. llg of methanesulfonic acid ‘5·75 g of phenol was added and allowed to accumulate at room temperature for 15 hours. Stay at 3〇. (: Add 120g of water below, wash the water layer with 4〇g of _ butyl methyl ether 3 times, then add 80g of dichloromethane and 2 of 2 difluorononylbenzene benzoic acid clock salt and give it 2 hours. Termination is granted, g, after separating the separated aqueous layer, adding 28 g of 0.1% by weight aqueous ammonia solution and mixing. Ending the stirring and removing the separated aqueous layer, repeating this step until the separated aqueous layer is present. The solvent was distilled off by a rotary evaporator to obtain 10.33 g of a white powder of 4-hydroxyphenyldiphenylphosphonium 2~trifluoromethylbenzene$xamate. Dissolving 8· Olg of 4-carbyl group Phenyl diphenyl vegetable trifluoromethyl stupid 319750 34 200922947 salt, 2. 74g of potassium carbonate and cesium. I8g of N, N, N, N,-tetramethylethylenediamine in 36g of two Then, add 5. 3 ig of chloroethyl vinyl ether, raise the temperature to 8 (TC. Stir for 15 hours, cool the reaction solution to 3 (TC or less. After filtering to remove the solid matter, add 4 〇g of water, The aqueous layer was washed three times with 30 g of hexane, 30 g of dichloromethane and 6 g of water were added, and the target was extracted into a dichlorof-ane layer by stirring. The organic layer was washed repeatedly with distilled water. The water layer is pH 7. The oil is used to obtain 3. 7g of oily substance. The substance is known as 4-ethyloxyethoxy bromide by distillation to remove the solvent by twirl and t is 1H-NMR And ion chromatography to determine the acid salt. Diphenyl hydrazine 2-trifluoromethyl stupid

(4 0 0 MHz、 1 Η)、4 . 2 7 (d、2Η)、. 1 〇H) , 7.(4 0 0 MHz, 1 Η), 4. 2 7 (d, 2Η), . 1 〇H), 7.

‘ CD C I 3) (d、1H)、 7. 4 1 (t、 .8 5 (d、I 〇 9 - 4 . 0 5 (n 6(t、2H)、6. 、7 . 5 0 ( t、1 i 8· 4 1 (d, 2 H) (m、2H)、 6· 5 3 (q、 1H)、7,( 乙烯氧基乙氧基苯基·二^帛 氣甲基笨磺酸鹽之合成: 二丁基苯基)銃2-三 〇t°' CD CI 3) (d, 1H), 7. 4 1 (t, .8 5 (d, I 〇9 - 4 . 0 5 (n 6(t, 2H), 6. , 7. 5 0 ( t , 1 i 8· 4 1 (d, 2 H) (m, 2H), 6· 5 3 (q, 1H), 7, ((ethyleneoxyethoxyphenyl) dimethane methyl sulfonic acid Synthesis of salt: dibutylphenyl) 铳2-three 〇t°

忿解4. 51g之4-羥基苯基二 (4-第二丁基笨基)毓2~ 319750 35 200922947 二說甲基苯礦酸鹽、5. 30g之碳酸鉀及〇. 53忌之N,N,N,,N,-四甲基乙二胺於3〇g之二曱亞砜中。然後,加入10. 〇3g 之氣乙基乙烯醚,升溫至80°C。攪拌1 5小時,冷卻反應 液至30°C以下。過濾去除固形物之後,加入i5〇g之水及 93g之一氯曱烷,萃取目標物至二氯甲烷層中。用蒸餾水 重複洗淨有機層至分離之水層呈現pH7為止。以旋轉蒸散 态瘵餾去除溶劑而得8. 57g之紅色粉末。該物質以沱州服 及離子層析法測定結果,確知為4_乙烯氧基乙氧基苯基二 (4-第二丁基苯基)毓2-三氟甲基苯石黃酸鹽。 (ή , 一 ▲·〇 厶、S、丄 on;、, 7 2 8 // t' 27 (d' 1H) ' 4·; 6 4 Z f、、2H)、7. 4 1 (t、1H) 6 4 (m、8H)、7. 85 (d、2H)、, 0 9 -(t、 7 · 5 4 1( H-NMR (4 0 0 MHz、 4 · 0 5 (m、2 Η)、4. 2 3 2Η)、6 · 5 3 (q、1 Η)、 〇 ( t , 1H)、7. 6 9-7. d、2H) (實施例1) 下式(A)所示感光性樹脂 之感光性樹脂) 之合成(即,表1中第1_型44. 51g of 4-hydroxyphenyl bis(4-t-butylphenyl) 毓2~ 319750 35 200922947 Two said methyl benzoate, 5. 30g of potassium carbonate and cesium. 53 , N, N,, N,-tetramethylethylenediamine in 3 〇g of disulfoxide. Then, 10. g of ethylene vinyl ether was added and the temperature was raised to 80 °C. Stir for 15 hours and cool the reaction to below 30 °C. After the solid matter was removed by filtration, i5 g of water and 93 g of one chlorodecane were added, and the target was extracted into a dichloromethane layer. The organic layer was washed repeatedly with distilled water until the separated aqueous layer appeared to pH 7. The solvent was removed by rotary distillation to give a red powder of 8.7 g. This material was identified as a 4-vinyloxyethoxyphenyl bis(4-t-butylphenyl)phosphonium 2-trifluoromethyl benzene phleoate by the results of the analysis by ion chromatography and ion chromatography. (ή, 一▲·〇厶, S, 丄on;,, 7 2 8 // t' 27 (d' 1H) ' 4·; 6 4 Z f,, 2H), 7. 4 1 (t, 1H 6 4 (m, 8H), 7.85 (d, 2H), 0 9 - (t, 7 · 5 4 1 (H-NMR (4 0 0 MHz, 4 · 0 5 (m, 2 Η) , 4. 2 3 2Η), 6 · 5 3 (q, 1 Η), 〇 (t, 1H), 7. 6 9-7. d, 2H) (Example 1) The sensitization shown in the following formula (A) Synthesis of photosensitive resin) (ie, type 1 in Table 1)

31975〇 36 20092294731975〇 36 200922947

OH (A) 在氮氣環境下,溶解50· Og之以聚苯乙烯換算分子量 (Mw)為16400、分子量分布(Mw/Mn)為1. 〇9之聚經基苯乙 烯於350ml之1,3-二氧雜戊環之後,在常壓下蒸顧去除 1,3 - —氧雜戊壞,確遇反應系統内水分減少到1 〇 〇 ppm以 ( 下。冷卻反應液至2 0 °C以下,添加6 2 /z L之3 5重量%之鹽 酸。其次,用1小時滴入28. 4g之含有34. 6重量%之乙基 乙烯喊之1,3-二氧雜戊環溶液,在30 °C下授拌2小時。冷 卻/谷液至15 C ’以3 0分鐘.滴入8. 8 g之合成例1所得4 -乙烯氧基乙氧基苯基二苯基毓全氟丁烷磺酸鹽之63.8重 量%之1,3-二氧雜戊環溶液之後,在3〇t:下攪拌2小時。 用氨水進行中和,將該溶液滴入在室溫下之17〇〇g之純水 中’使固形物析出。濾、取固形物後,使用乙腈及純水施予 再沈殿’在35。(:下乾燥24小時而得53. 5g之樹脂。該樹 37 319750 200922947 脂以1Η-麵測定結果,確知係所用聚經基苯乙晞之經基之 氫原子之乙氧基乙基化率為3。· 6%,式⑴所示單位為工“% 而構成之感光性樹脂。即,各組成為a: b: d=l6: 3〇 6 : 67. 8(莫耳%)。 . (實施例2) 上式(A)所示感光性樹脂2之合成(即,表i中之第i 型之感光性樹脂) 在氮氣環境下,溶解以聚苯乙烯換算分子量(Mw)為 16400、分子量分布(Mw/Mn)為1.09之聚羥基苯乙烯5〇 〇g 於350mL之1,3-二氧雜戊環之後,在常壓下蒸餾去除i,3_ 氧雜戊i確s忍反應糸統内水分減低至1 〇 〇卯m以下。冷 卻反應液至2(TC以下,添加62/zL之35重量%之鹽酸。其 次,用1小時滴入27.9g之含35 4重量%之乙基乙烯醚之 1,3-二氧雜戊環溶液,在3(rc下攪拌2小時。冷卻溶液至 15 C ’用30分鐘滴入2. 8g之含合成例1所得4-乙烯氧基 乙氧基苯基二苯基鏑全氟丁烷磺酸鹽之63. 8重量%之1,3-二氧雜戊環之後,在3(TC下攪拌2小時。以氨水進行中和, 滴入該溶液於室溫下之2000g之純水中,使固體析出。濾 取固形物’使用乙腈及純水施行再沈澱,在35°C下乾燥24 小時’而得52. 〇g之樹脂。該樹脂以1H-NMR測定結果,確 知係所用聚羥基苯乙烯之羥基之氫原子之乙氧基乙基化率 為3〇. 8°/。’式(1)所示單位為〇. 6〇%而構成之感光性樹脂。 即’各組成為 a : b : d=0. 6 : 30. 8 : 68. 6(莫耳%)。 (實施例3) 38 319750 200922947 下式(B)所示感光性樹脂3之合成(即,表1中之第3 型之感光性樹脂)OH (A) In a nitrogen atmosphere, the molecular weight (Mw) in terms of polystyrene is 50,400, and the molecular weight distribution (Mw/Mn) is 1. 聚9 of polypyridyl styrene in 350 ml of 1,3 - After the dioxapentane ring, the 1,3- oxalo- pentane is removed by steaming under normal pressure, and the water in the reaction system is reduced to 1 〇〇ppm (below. Cooling the reaction solution to below 20 °C) 6重量的含乙乙含的1,3-二oxacyclo ring solution, in the case of adding 6 2 /z L of 5% by weight of hydrochloric acid. The mixture was stirred at 30 ° C for 2 hours. Cooling / glutamic solution to 15 C ' at 30 minutes. Into 8. 8 g of the 4-methyloxyethoxyphenyldiphenylphosphonium perfluorobutane obtained in Synthesis Example 1. After the 63.8 wt% 1,3-dioxolane solution of the alkanesulfonate was stirred for 2 hours at 3 Torr: neutralized with aqueous ammonia, and the solution was dropped into 17 Torr at room temperature. g. In the pure water of 'pure the solid matter. After filtering and taking the solid matter, use acetonitrile and pure water to give the sulphide' at 35. (: drying under 24 hours to obtain 53.5 g of resin. The tree 37 319750 200922947 Lipid measurement by 1Η-plane It is confirmed that the ethoxyethylation ratio of the hydrogen atom of the perylene group of the acetophenone used is 3.6%, and the unit represented by the formula (1) is a photosensitive resin composed of "%". The composition is a: b: d = l6: 3〇6: 67. 8 (mol%). (Example 2) Synthesis of the photosensitive resin 2 represented by the above formula (A) (i.e., the first in Table i) i type photosensitive resin) A polyhydroxy styrene having a molecular weight (Mw) of 16400 and a molecular weight distribution (Mw/Mn) of 1.09 in a nitrogen atmosphere was dissolved in 350 mL of 1,3- After the dioxapentane ring, distilling under normal pressure to remove i,3_oxathiam, the water content in the reaction system is reduced to less than 1 〇〇卯m. Cool the reaction solution to 2 (TC below, add 62/zL) 35% by weight of hydrochloric acid. Next, 27.9 g of a 1,3-dioxolane solution containing 35 4 wt% of ethyl vinyl ether was added dropwise over 1 hour, and stirred at 3 (rc for 2 hours). 8% by weight of 1,3- ethoxyethoxy phenyl diphenyl fluorene perfluorobutane sulfonate obtained in Synthesis Example 1. After dioxolane, stir at 3 (TC for 2 hours) The mixture was neutralized with aqueous ammonia, and the solution was added dropwise to 2000 g of pure water at room temperature to precipitate a solid. The solid matter was collected by filtration and reprecipitated using acetonitrile and pure water, and dried at 35 ° C for 24 hours. The resin of 52. 〇g. The resin was determined by 1H-NMR, and it was confirmed that the ethoxyethylation ratio of the hydrogen atom of the hydroxyl group of the polyhydroxystyrene used was 3 /. 8 ° /. The photosensitive resin represented by the formula (1) is 〇. 6〇%. That is, the composition is a : b : d = 0.6: 30. 8 : 68. 6 (% by mole). (Example 3) 38 319750 200922947 Synthesis of photosensitive resin 3 represented by the following formula (B) (that is, photosensitive resin of the third type in Table 1)

ΟΗ (Β) C4F9S〇3'ΟΗ (Β) C4F9S〇3'

V 在氮氣裱境下,溶解50. 〇g之以聚苯乙烯換算分子量 (Mw)為16400、分子量分布(Mw/Mn;^丨.〇9之聚羥基苯乙 烯於350mL之1,3_二氧雜戊環之後,在常壓下蒸餾去除 1,3_二氧雜戊環,確認反應系統内水分減低至l00ppm以 下。冷卻反應液至2(rc以下,添加63/^之35重量%之鹽 酸。其次,以1小時滴入26.0g之含281重量%之乙基乙 ,醚之1^-二氧雜戊環溶液,在3(rc下攪拌2小時。冷卻 洛液至15C,用30分鐘滴入8.8g之含有合成例2 乙稀氧基乙氧基…"苯基二("三丁基苯基;; 全齓丁烷磺酸鹽之63.8重量%之L3 —二氧雜戊環溶液之 後’在30 C下攪拌2小時。然後,添加〇. 2ig之n n一一曱 胺基吡啶,加溫至4(rc。用i小時滴入19.5这之含〇 重量%之二石炭酸二第三丁醋之以―二氧雜戊環溶二,在相 319750 39 200922947 同溫度下㈣1小時。該溶液滴人於室溫下17GGg之純水 中,使固形物析出。濾取固形物後,使用二氣曱烷及己烷 施行再沈澱,在35〇c下乾燥24小時,而得53.ig之樹脂^ 該樹脂以1H-NMR測定結果,確知係所用聚羥基苯乙烯之羥 基,氫f子之乙氧基乙基化率為21.4%,式(1)所示單位^ 1. 7%,第三丁氧基羰基化率為9. 2%所構成之感光性樹脂。 即,各組成為 a: b: c: d=1.7: 2L4: 9.2: 67.7(莫耳%)。 (實施例4) 下式(C)所示感光性樹脂4之合成(即,表i中之第^ 型之感光性樹脂)V in a nitrogen atmosphere, dissolved in 50. 〇g in polystyrene conversion molecular weight (Mw) of 16400, molecular weight distribution (Mw / Mn; ^ 丨 〇 9 polyhydroxy styrene in 350mL of 1, 3 _ After the oxapenic ring, the 1,3-dioxolane was distilled off under normal pressure, and it was confirmed that the water content in the reaction system was reduced to 100 ppm or less. The reaction liquid was cooled to 2 (r or less, and 35 wt% of 63/^ was added. Hydrochloric acid. Next, 26.0 g of a solution containing 281% by weight of ethyl b, ether 1 ^-dioxolane was added dropwise over 1 hour, and stirred at 3 (rc for 2 hours. Cooling the solution to 15 C, using 30 8.8 g of the mixture containing the synthesis example 2 ethyleneoxyethoxy group "phenyl di("tributylphenyl;; 63.8 wt% L3-dioxa compound After the pentacyclic solution, it was stirred at 30 C for 2 hours. Then, 2 ng of nn-monoamidopyridine was added, and the temperature was increased to 4 (rc. 19.5% by weight of bismuth carbonic acid was added dropwise for 1 hour. The third butyl vinegar is dissolved in dioxopentane ring, and the phase is 319750 39 200922947 at the same temperature (four) for 1 hour. The solution is dropped into 17GGg of pure water at room temperature to precipitate solid matter. After the solid matter was collected by filtration, reprecipitation was carried out using dioxane and hexane, and dried at 35 ° C for 24 hours to obtain a resin of 53. ig. The resin was confirmed by 1 H-NMR to confirm the polyhydroxybenzene used. The hydroxyethylation ratio of the hydrogen group is 21.4%, the unit of the formula (1) is 1.7%, and the third butoxycarbonylation ratio is 9.2%. That is, each composition is a: b: c: d = 1.7: 2L4: 9.2: 67.7 (mol%). (Example 4) Synthesis of photosensitive resin 4 represented by the following formula (C) (ie, table The photosensitive resin of the type II in i)

在氮氣環境下,溶解50. 〇g之以聚苯乙烯換算分子量 (Mw)為16400、分子量分布丨.09之聚羥基苯乙 烯於350mL之1,3-二氧雜戊環之後,在常壓下蒸餾去除 319750 40 200922947Under a nitrogen atmosphere, 50. 〇g of polystyrene-converted molecular weight (Mw) of 16400, molecular weight distribution of 09.09 polyhydroxystyrene after 350 mL of 1,3-dioxolane, at atmospheric pressure Distillation to remove 319750 40 200922947

α每,確認反應系統内水分減低至1 OOppm以 ^液至20t:以下,添加62/zL之35重量%鹽酸。 ’J、時滴入27· 9g之含35.4重量%之乙基乙烯醚 ,扣二氧雜戊環溶液,在3(TC下攪拌2小時。冷卻溶液 至丨5 C ’用30分鐘滴入4. 2g之含有合成例3所得4_乙烯 虱基辛氧基苯基二苯基毓全氟丁烷磺酸鹽之63. 8重量%之 厂3 —二氧雜戊環溶液之後,在3(rc下攪拌2小時。以氨水 進行中和,該溶液滴入在室溫下之2〇〇〇g之純水中,使固 形物析出。濾取固形物後,使用乙腈及純水施予再沈澱, 在35t下乾燥24小時,而得52. Og之樹脂。該樹脂以 ^-NMR測定結果,確知係所用聚羥基苯乙烯之羥基之氫原 子之乙氧基乙基化率為30.2%,式(1)所示單位為1〇%而構 成之感光性樹脂。即,各組成為a: b: d=i. 〇: 3〇 2: 68 耳%)。 .. . . ·、 (貫施例5) 下式(D)所示感光性樹脂5之合成(即,表^中之第工 型之感光性樹脂) 319750 41 200922947For each of α, it was confirmed that the water content in the reaction system was reduced to 100 ppm to 20 t: or less, and 62/zL of 35 wt% hydrochloric acid was added. 'J, when 27.8 wt% of ethyl vinyl ether was added dropwise, and the dioxolane solution was stirred, and the mixture was stirred at 3 (TC for 2 hours. The solution was cooled to 丨5 C' and dropped into 4 for 30 minutes. 2g of the 4_vinylmercaptooxyphenyldiphenylfluorene perfluorobutane sulfonate obtained in Synthesis Example 3, 63.8% by weight of the plant 3 - dioxapentane solution, at 3 ( The mixture was stirred for 2 hours at rc, neutralized with aqueous ammonia, and the solution was dropped into 2 〇〇〇g of pure water at room temperature to precipitate a solid matter. After solid matter was collected by filtration, acetonitrile and pure water were applied thereto. The precipitate was dried at 35 Torr for 24 hours to obtain a resin of 52.0 g. The resin was confirmed by ^-NMR to confirm that the ethoxyethylation ratio of the hydrogen atom of the hydroxyl group of the polyhydroxystyrene used was 30.2%. A photosensitive resin composed of the formula (1) and having a unit of 1% by weight. That is, each composition is a: b: d = i. 〇: 3〇2: 68% by ear) . . . . Example 5) Synthesis of the photosensitive resin 5 represented by the following formula (D) (that is, the photosensitive resin of the first type in the table) 319750 41 200922947

〇2宁/、宁〇2 F2C、c/CF2 f2 在氮氣環境下,溶解50. Og之聚苯乙烯換算分子量(Mw) 為9000、分子量分布(Mw/Mn)為1.11之聚羥基苯乙烯於 400mL之1,3-二氧雜戊環中,確認反應系統内水分減低至 lOOppm以下。冷卻該溶液至15°C,添加63# L之35重量〇/〇 之鹽酸。其次’以15分鐘滴入28. 4g之含35. 5重量%之乙 基乙烯醚之1,3-二氧雜戊環,在151下攪拌6〇分鐘,繼 在30°C下攪拌1· 5小時。冷卻該溶液至15它,用π分鐘 滴入8. 4g之含合成例4所得4-乙烯氧基乙氧基苯基二苯£ 基毓環(1,3-全氟丙烷二磺醯)亞胺鹽之%.丨重量%之丨3一 二氧雜戊環溶液分鐘,繼在3代 下則半2小時。加入m“之28重量%之氨水,㈣μ 分鐘以上而進行中和’將該溶液 ^M 1小時時間滴入在室溫 下之1 700g之純水中,使固形物 何出。濾取固形物,以乙 319750 42 200922947 腈及純水施行再沈澱,在35°C下乾烨丄 也各24小時而得53 7g 之樹脂。該樹脂以W-NMR測定結果,墟 ' 禾確知係所用聚羥基苯 乙烯之羥基之氳原子之乙氧基乙基化率泛 〇 午為31. 8%,式(1)所 示單位為1. 1 %而構成之感光性樹脂。g 1 ’各組成為a : b : d = l. 1 : 31. 8 : 67. 1(莫耳%)。 (實施例6) 之第1 下式(E)所示感光性樹脂6之合成卩,& i _ 型之感光性樹脂)〇2宁/, 宁〇2 F2C, c/CF2 f2 dissolved in a nitrogen atmosphere, 50. Og of polystyrene-converted molecular weight (Mw) of 9000, molecular weight distribution (Mw / Mn) of 1.11 polyhydroxystyrene In 400 mL of the 1,3-dioxolane, it was confirmed that the water content in the reaction system was reduced to 100 ppm or less. The solution was cooled to 15 ° C, and 63 wt% of 35 wt% hydrazine hydrochloride was added. Next, '2. 4g of 1,3-dioxolane containing 3.5.5% by weight of ethyl vinyl ether was added dropwise in 15 minutes, stirred at 151 for 6 minutes, followed by stirring at 30 ° C. 5 hours. The solution was cooled to 15 bp, and 8.4 g of the 4-vinyloxyethoxyphenyldiphenyl fluorenyl ring (1,3-perfluoropropane disulfonate) obtained in Synthesis Example 4 was added dropwise. % of amine salt. 丨% by weight of 一3 dioxolane solution in minutes, followed by 3 generations for half an hour. Adding "28% by weight of ammonia water, and neutralizing (4) or more for neutralization", the solution was dropped into 1 700 g of pure water at room temperature for 1 hour to make a solid matter. Reprecipitation was carried out with a nitrile and pure water of B 319750 42 200922947, and dried for 24 hours at 35 ° C to obtain 53 7 g of a resin. The resin was determined by W-NMR, and the polyhydroxyl group used in the market was confirmed. The ethoxyethylation rate of the argon atom of the hydroxy group of the styrene is 31.8%, and the unit represented by the formula (1) is a photosensitive resin composed of 1.1%. The composition of g 1 'is a. : b : d = l. 1 : 31. 8 : 67. 1 (mole %). (Example 6) The first synthetic formula 6 of the following formula (E), & i _ type Photosensitive resin)

在氮氣環境下,溶解50. Og之聚苯乙稀換算分子量 為16400、分子量分布(Mw/Mn)為1.09之聚經基苯乙歸於) 35〇mL之1,3-二氧雜戊環之後,在常壓下蒸餾去除丨,3〜二 氧雜戊環,確認反應系統内水分減低至l〇〇ppm以下。冷今 31975〇 43 200922947 反應液至20 °C以下,添加62//L之35重量%之鹽酸。其次, 用1小時滴入27. 9g之含35. 4重量%之乙基乙烯醚之1,3__ 二氧雜戊環溶液,在30°C下攪拌2小時。冷卻溶液至j 5 C ’用30分鐘滴入3. 4g之含有合成例5所得4-乙稀氧基 乙氧基苯基二苯基毓雙(全氟甲烷磺醯)亞胺鹽之8重 量%之1,3-二氧雜戊環溶液之後,在3〇ΐ下攪拌2小時。 脂以H-NMR測定結果, 氫原子之乙氧基乙基化 而構成之感光性樹脂。! 68. 4(莫耳%)。 (實施例7) - 用氨水進行中和,將該溶液滴入在室溫下之2〇〇〇g之純水 中,使固形物析出。遽取固形物後,使用乙腈及純水施行 祕殿,在肌下乾燥24小時而得52、之樹脂。該樹In a nitrogen atmosphere, after dissolving 50. Og of polystyrene, the molecular weight is 16400, and the molecular weight distribution (Mw/Mn) is 1.09, and the molecular weight distribution (Mw/Mn) is 1.39 after the 1,3-dioxolane The hydrazine and 3 to dioxolane were distilled off under normal pressure, and it was confirmed that the water content in the reaction system was reduced to less than 10 ppm. Lengjin 31975〇 43 200922947 The reaction solution was cooled to below 20 °C, and 62//L of 35 wt% hydrochloric acid was added. Next, 27.9 g of a 1,3__ dioxapentane solution containing 35.4 wt% of ethyl vinyl ether was added dropwise over 1 hour, and the mixture was stirred at 30 ° C for 2 hours. The weight of the 4-ethyleneoxyethoxyphenyldiphenylphosphonium bis(perfluoromethanesulfonate) imide salt obtained in Synthesis Example 5 was dropped into 3.5 g of the mixture. After the % 1,3-dioxolane solution, it was stirred at 3 Torr for 2 hours. The lipid is a photosensitive resin composed of an ethoxy group of a hydrogen atom as a result of H-NMR measurement. ! 68. 4 (% by mole). (Example 7) - Neutralization was carried out with aqueous ammonia, and the solution was dropped into 2 g of pure water at room temperature to precipitate a solid matter. After taking the solid matter, the secret chamber was applied with acetonitrile and pure water, and dried under the muscle for 24 hours to obtain a resin of 52. The tree

下式(F)所示感光性樹脂7 型之感光性樹脂) 之合成(即 表1中之第1 319750 44 200922947 trliSynthesis of a photosensitive resin type 7 photosensitive resin represented by the following formula (F) (i.e., the first 319750 44 200922947 trli in Table 1)

OH (F) 在氮氣環境下’溶解50. Og之聚笨乙烯換算分子量 為16400、分子量分布(心^^為丨· 〇9之聚羥基苯乙^心) 3j0mL之1,3-二氧雜戊環之後,在常壓下蒸餾去除丨,t二 氧雜戊環,確知反應系統内水分減低至1〇〇ppm以下。冷P 反應液至20°C以下,添加62//L之35重量%之鹽酸。其次^ 用1小時滴入27. 2g之含有31.3重量%之乙基乙烯醚之 1,。3-二氧雜戊環溶液,在3〇。〇下攪拌2小時。冷卻溶液至 15 C,用30分鐘滴入1 〇. 1 g之含有合成例6所得4-乙烯 氧基乙氧基苯基二(4__第三丁基笨基)毓2,4, 6—三異丙基 319750 45 200922947 ’苯石黃酸鹽之19·9重量%之i,3 —二氧雜戊環溶液之後,在3〇 °C下授拌2小時 '然後,用氨水進行中和,將該溶液滴入 在室溫下2500g之純水,使固形物析出。據取固形物後, 用乙腈及純水施行再沈澱,在35它下乾燥24小時,而得 Μ. 7g之樹脂。該樹脂以1H-NMR測定結果,確知係所用聚 理基苯乙烯之羥基之氫原子之乙氧基乙基化率為32 3%, 式(1)所示單位為0.6%而構成之感光性樹脂。即,各級成 為 a : b : d=0. 6 : 32. 3 : 67. 1 (莫耳%)。 (貫施例8) 下式(G)所示感光性樹脂8之合成OH (F) in a nitrogen atmosphere 'dissolved 50. Og of polystyrene in terms of molecular weight of 16400, molecular weight distribution (heart ^ ^ is 丨 · 〇 9 of polyhydroxybenzene ethyl) 3j0mL of 1,3-dioxine After the penta ring, the hydrazine and t-dioxolane were distilled off under normal pressure, and it was confirmed that the water in the reaction system was reduced to 1 〇〇 ppm or less. The cold P reaction solution was cooled to 20 ° C or lower, and 62//L of 35 wt% hydrochloric acid was added. Next, 27.2 g of 1,3 wt% of ethyl vinyl ether was added dropwise over 1 hour. 3-dioxolane solution at 3 Torr. Stir under the arm for 2 hours. The solution was cooled to 15 C, and 1 g of the 4-vinyloxyethoxyphenyl bis(4__t-butylphenyl) ruthenium 2,4,6 obtained in Synthesis Example 6 was added dropwise over 30 minutes. Triisopropyl 319750 45 200922947 '19.9% by weight of benzoate, i.3-dioxalanyl solution, then mixed at 3 °C for 2 hours' Then, neutralized with ammonia water The solution was dropped into 2500 g of pure water at room temperature to precipitate a solid matter. After the solid matter was taken, it was reprecipitated with acetonitrile and pure water, and dried at 35 for 24 hours to obtain a resin of 7 g. As a result of 1H-NMR measurement, it was confirmed that the ethoxyethylation ratio of the hydrogen atom of the hydroxyl group of the polyphenylene styrene used was 32 3%, and the unit represented by the formula (1) was 0.6%. Resin. That is, each level becomes a : b : d = 0.6: 32. 3 : 67. 1 (mole %). (Example 8) Synthesis of photosensitive resin 8 represented by the following formula (G)

在氮氣環境下’溶解2〇. 〇〇g之瓜本乙稀換算分子量 319750 46 200922947 (Mw)為 16400、合士 θ^ 刀千1分布(Mw/Mn)為1.09之聚羥基笨乙 蝉於200mL之上 ,d —虱雜戊環之後,在常壓下蒸餾去除 氧才准戊^晨’確知反應系統内水分減低至10Oppm以 下冷部反應液至2〇°c以下,添加25/zL之35重量%之鹽 酉夂。其次,帛1小時滴入11.89g之含37,2重量%之乙基乙 稀_之1,3-二氧雜戊環溶液,在3(Γ(:下擾拌2小時。冷卻 =/合液至15 C,用30分鐘滴入丨.46g之含有合成例7所 ,件4-乙烯氧基乙氧基笨基二苯基毓2,4,6_三異丙基苯磺 I鹽之63. 8重量%之丨,3_二氧雜戊環溶液之後,在3〇。〇下 授拌2小時。用氨水進行中和,將該溶液滴入在室溫下之 l〇〇〇g之純水中,使固形物析出。濾取固形物後,用乙腈 及純水施行再沈澱,在35t下乾燥24小時,而得Μ咖 之樹脂。該樹脂據1H-膽測定結果,確知係所用聚經基苯 乙烯之羥基之氫原子之乙氧基乙基化率為33 〇%,式(1)所 示單位為〇. 6%而構成之感光性樹脂。即,各組成為a · b : I 6 : 33. 0 : 66. 4(莫耳%)。 ’ (貫施例9) 下式(Η)所示感光性樹脂9之合成 319750 47 200922947In a nitrogen atmosphere, 'dissolve 2 〇. 〇〇g's melon is converted to a molecular weight of 319,750 46 200922947 (Mw) is 16400, 士士θ^ Knife 1 distribution (Mw/Mn) is 1.09 polyhydroxy stupid Above 200mL, after d-doping pentane ring, distilling off oxygen under normal pressure is only possible. It is known that the water in the reaction system is reduced to less than 10Oppm and the cold reaction liquid is below 2〇°c, and 25/zL is added. 35 wt% of salt mash. Next, 11.89 g of a solution containing 37,2% by weight of ethyl ethoxide 1,3-dioxolane was added dropwise over 1 hour, at 3 (Γ(:2), cooling = / combined The solution was added to 15 C, and a solution of 46 g of 4-vinyloxyethoxyphenyldiphenylphosphonium 2,4,6-triisopropylbenzenesulfonate I was added dropwise over 30 minutes. 63. 8% by weight of hydrazine, after the 3 dioxolane solution, was mixed for 3 hours under 3 Torr. Neutralize with ammonia water, and the solution was dropped into the room temperature at room temperature. In the pure water, the solid matter is precipitated. After the solid matter is filtered, it is reprecipitated with acetonitrile and pure water, and dried at 35 t for 24 hours to obtain a resin of the coffee. The resin is determined according to the result of 1H-biliary determination. The ethoxyethylation ratio of the hydrogen atom of the hydroxyl group of the styrene-based styrene used is 33 〇%, and the unit represented by the formula (1) is 〇.6%. The composition is a · b : I 6 : 33. 0 : 66. 4 (mole %). ' (Example 9) Synthesis of photosensitive resin 9 shown by the following formula (Η) 319750 47 200922947

在氮氣環境下’溶解20. 0g之聚笨乙烯換算分子量(μ 為1 6400、分子量分布.則為1〇9之聚祕苯乙稀 2〇〇mL之1,3-二氧雜戊環之後,.在常壓下蒸餾去除丨,^二 氧雜戊環,確認反應系統内水分減低至1〇〇ppm以下。’冷^ 反應液至2(TC以下,添加25/zL之35重量%之鹽酸。其次, 用1小時滴入12. 02g之含有37.8重量%之乙基乙烯醚之 二氧雜戊環溶液,在3(rc下攪拌2小時。冷卻溶液至 15=,用30分鐘滴入1.45g之含有66.0重量%之合成例8 所付4-乙烯氧基乙氧基苯基二笨基毓2_三氟曱基苯磺酸 臨之 1 q— 一 、 二 ’ 氧雜戊環溶液之後,在3(TC下攪拌2小時。用 風水進行中和’將該溶液滴入在室溫下之l〇〇〇mL之純水 中,使固形物析出。濾取固形物後,用乙腈及純水施行再 沈殿,在q RτIn a nitrogen atmosphere, 'dissolved 20.0 g of polystyrene-converted molecular weight (μ is 16400, molecular weight distribution. Then it is 1〇9 of poly-phenylene 2 〇〇mL of 1,3-dioxolane) Distilling and removing hydrazine and dioxapentane under normal pressure, and confirming that the water content in the reaction system is reduced to less than 1 〇〇 ppm. 'Colding the reaction solution to 2 (below TC, adding 35 wt% of 25/zL) Hydrochloric acid. Next, 12.02 g of a dioxolane solution containing 37.8% by weight of ethyl vinyl ether was added dropwise over 1 hour, and stirred at 3 (rc for 2 hours. The solution was cooled to 15 =, and dropped for 30 minutes). 1.45 g of 66.0% by weight of Synthesis Example 8 4-vinyloxyethoxyphenyl dipyridyl 2 -trifluorodecylbenzenesulfonic acid 1 1 - bis-oxopentane ring solution Thereafter, the mixture was stirred at 3 (TC for 2 hours. Neutralization with feng shui') The solution was dropped into 100 mL of pure water at room temperature to precipitate a solid matter. After the solid matter was collected by filtration, acetonitrile was used. And pure water is applied to the temple again, at q Rτ

W⑽L下乾燥24小時而得樹脂。該樹脂以1H—丽R 48 319750 200922947 乙烯之羥基之氫原子之乙 示單位為1· 4%而構成之感 d=l. 4 : 31. 5 : 67. 1(莫耳 測定結果’確知係所用聚經基笨 氧基乙基化率為31.5%,式(1)戶斤 光性樹脂。即,各組成為a : b . 0/〇)。 (實施例10)The resin was dried by drying at W (10) L for 24 hours. The resin is characterized by the fact that the hydrogen atom of the hydroxyl group of ethylene of 1H-Li R 48 319750 200922947 is 1.4%, and the sense is d=l. 4 : 31. 5 : 67. 1 (Moer measurement result 'is sure The polyacetoxy group having a polyethylation ratio of 31.5% is a compound of the formula (1), that is, each composition is a: b. 0/〇). (Embodiment 10)

下式(I)所示感光性樹脂1 〇之合成Synthesis of photosensitive resin 1 下 represented by the following formula (I)

()()

、在虱氣環境下’溶解20. lg之聚苯乙烯換算分子量(Mw) 為1 6400、分子量分布(Mw/Mn)g 1〇9之聚羥基苯乙烯於 2j0mL之1,3 —二氧雜戊環之後,在常壓下蒸餾去除丨,3一二 氧雜戊環,確認反應系統内水分減低至1〇〇ppm以下。冷卻 反應液至20t以下,添加25#L之35重量%之鹽酸。其^欠, 以1小時滴入11.84g之含有36.4重量%之乙基乙烯醚之 13-二氧雜戊環溶液,在3(rc下攪拌2小時。冷卻溶液至 319750 49 200922947 15°C,用30分鐘滴入Ug之含有合成例9所得[乙稀 氧基乙氧&amp;苯基n三丁基苯基)蔬2_三氣f基苯磺 酸鹽之68.8重量%之1,3_二氧雜戊環溶液之後,在3〇。〇下 授拌2小時。用氨水進行中和,該溶液滴人在室溫下之 lOOOmL之純水中,使固形物析出。濾取固形物後,用乙腈 及純水施行再沈殿’在35t下乾燥24小時而得樹脂。該 樹脂以MMR測定結果,確認係所用聚經基苯乙婦之經基 之氫原子之乙氧基乙基化率為35. 2%,式⑴所示單位為 0.6%而構成之感紐樹脂。艮p,各組成為a:b :㈣6: 35. 2 : 64. 2(莫耳%)。 〈使用氙燈曝光之評估〉 (调製光阻及測定失效(breakthrough)時間) θ溶解1〇〇重量份之實施例丨所得感光性樹脂i、與〇 24 重量份之三乙醇胺於5-25重量份之丙二醇單甲基乙酸醋 中,用濾器(PTFE濾器)過濾調製得液狀之正型光阻(感光 性組成物)。使用旋轉塗布器將該光阻塗布在矽晶片(直 徑:4英对)’在11(rc下預洪烤9〇秒鐘,而得膜^為5〇_ 之光阻膜。用山气燈(波長為248nm)將該光阻膜曝光,繼在 noc下後烘烤(曝光後加熱)9〇秒鐘。然後,在23它下使 用顯像液(2. 38重量%之氫氧化四甲銨水溶液),測定失效 2間。其中,該失效時間乃指用一定能量照射後 使殘膜皆消失所需秒數。 結果,失效時間當曝光量係100mJ時為12秒鐘,當 5〇〇mJ時為3秒鐘。因此,實施例丨所得感光性樹脂1 ^ 319750 50 200922947 Λ 氣燈曝光,從本發明之感光性樹脂中之 產生酸,因該酸而樹脂之酸解 不木構4分 ^ _ 胖雕丞邛分脫離,對於顯傻泷 而言,可知由難溶解性變成可溶性。 貌,、頁像夜 又,替代感光性樹脂i,改用實施例 光性樹脂2至1〇,按昭卜、+、士门士 W所侍各磙 知“、、上述相同方法調製正 光阻膜,經曝光、預烘烤 尤卩獍伸 Η〇έ士里生a 士 烤顯像、測定其失效時 ^果’^效㈣當曝光量⑽時在12±2秒鐘範圍内, 二10::二3±1秒鐘範圍内。因此,可知感光性樹脂2 力幻0也猎a燈曝光,從本發明之感光性樹月旨中式⑴所示 產生酸,因該酸而聚合物之酸解離基部分脫離, 對於㉙像液而言’由難溶解性變成可溶性。 〈藉極紫外光(EUV)曝光之評估〉 (光阻之調製及塗布) 八溶解100重量份之實施例1所得感光性樹脂卜4重量 份之三苯基石夕燒基胺於2〇〇〇重量份之丙二醇軍甲驗乙酸 酉旨中,用0.2/zm之遽器(PTFE濾器)過濾而調製得正型光 阻°用旋轉塗布器將該光阻溶液塗布在使用六甲基二石夕氮 烷(hexamethyldisilazane)處理之4英吋之矽晶片上,再 用加熱板在liGt前後下加熱9G秒鐘左右,製作膜厚為〇1 βπι之均一之膜。按照相同方法,使用實施例2至1〇所得 感光性樹脂2至1〇,分別調製正型光阻而製成膜。 (感度之測定) 使用從大型輻射光設備之Spr i ng_8之直線加速器入 射之lGeV之加速電子,在New SUBARU儲存環之偏向電磁 319750 51 200922947 鐵所產生之同步加速輻射光,以鉬/矽多層膜反射而單色化 成為波長13. 5nm之極紫外光(EUV)做為曝光用光。將該£肝 照射在上述形成之光阻薄膜上,在9(rc上下熱處理6〇秒 鐘左右之後,次潰30秒鐘在23°C下之氫氧化四甲錢dAH) 之2.38重量%水溶液中。其次,經水洗,乾燥後藉由非接 觸型膜厚測定法測定膜厚。將曝光量之設定水準加以多元 化而進行各種之此操作,並將光阻殘膜厚成為零時之曝光 量求取做為Eth感度。 結果’就實施例1至1〇之光阻,Eth分別為〇 9至 6mJ/cm2。因此,可知本發明之感光性樹脂之感度優異。 又,藉四極質譜儀測定曝光中從光阻產生之氣體量之 結果’實施例1至10時皆少’相較產生氣體量較少之以往 之ESCAP型之化學放大系光阻而言,大約僅為其1/2至w 左右。其中,所產生氣體量越少,影響光罩或光學系等越 少而較佳。 〈藉電子描晝裝置之評估〉 (光阻之調製及塗布) 旦/谷解_重量份之實施例1所得感光性樹脂U 4 里伤之三苯基料基胺於2_重量份之丙二醇單甲基驗 =醋中,用0.2…濾器(PTFE濾器)過濾而調製: t光阻。用旋轉塗布器將將該光阻溶液 =燒處理之4英…夕晶片上,以加;板在“ 熱90秒鐘而製成膜厚為〇1/zm之 法,使用實施例2至1()所得感光性樹脂2至\=^ 319750 52 200922947 成正型光阻而製膜。 使用電子束描繪裝置,以加速電壓3〇keV、電流值 左右之條件τ,在上述製成之光阻薄膜上,照射期待得 w〇nm之線與間隙(Hne and space)之圖案。照射後在9〇 C進行烘烤60秒鐘’在23°C下浸潰於氫氧化四甲銨^難&quot; 之2.38重量%之水溶液中3〇秒鐘,然後用純水淋洗並乾 燥。使用下述方法評估所得圖案。 (感度) 使用掃描型電子顯微鏡(SEM)觀察所得圖案之剖面。以 能解像100·線條(線與間隙1:丨)之最小照射能量做為感 度。 〜 (線端粗糙度(line edge roughness)) 使用掃描型電子顯微鏡(SEM)觀察上述感度下製成之 線圖案”求得線端粗糙度(LER)。又,線端粗糙度係沿著所 得SEM像之線圖案在1. 5/z m長將間隔1〇nm之各點之分散 度之標準偏差乘上3倍而求得。該粗糙度值越小表示越平 滑。 該結果就實施例1至10之光阻而言,感度為6 4至 20/zC/cm2時,LER顯示2.0至6.0nm,形成良好之圖案。 又,就實施例1至ίο之光阻,藉加速電壓為50keV之電子 束描繪裝置,確認可得1〇〇ηιη以下之解像性能。特別在實 施例7之光阻,確認具備25nm之解像性能。 因此,確認使用本發明之感光性樹脂可形成良好之圖 案。 319750 53 200922947 【圖式簡單說明】 M. t »»&gt; 【主要元件符號說明】In a helium environment, 'dissolved 20. lg of polystyrene-converted molecular weight (Mw) of 1,600,400, molecular weight distribution (Mw/Mn) g 1〇9 of polyhydroxystyrene in 2j0mL of 1,3 - dioxa After the penta ring, the hydrazine and the 3 dioxolane were distilled off under normal pressure, and it was confirmed that the water content in the reaction system was reduced to 1 〇〇 ppm or less. The reaction solution was cooled to 20 t or less, and 25 wt% of 35 wt% hydrochloric acid was added. The solution was dropwise added to 11.84 g of a 13-dioxolane solution containing 36.4% by weight of ethyl vinyl ether in 1 hour, and stirred at 3 (rc for 2 hours. The solution was cooled to 319750 49 200922947 15 ° C, The Ug was added dropwise to Ug for 30 minutes, containing 68.8 wt% of the [ethyleneoxyethoxy/amp; phenyl n-butylphenyl) vegetable 2_tris-f-benzenesulfonate obtained in Synthesis Example 9. After the dioxolane solution, it was at 3 Torr. Underarm, mix for 2 hours. Neutralization was carried out with aqueous ammonia, and the solution was dropped in 100 mL of pure water at room temperature to precipitate a solid matter. After the solid matter was collected by filtration, it was dried with acetonitrile and pure water and dried at 35 Torr for 24 hours to obtain a resin. The resin was confirmed by the MMR measurement, and it was confirmed that the ethoxyethylation ratio of the hydrogen atom of the phenyl sulfonate group was 35.2%, and the unit represented by the formula (1) was 0.6%. .艮p, each composition is a:b: (four) 6: 35. 2: 64. 2 (mole%). <Evaluation of Exposure Using Xenon Lamp> (Modulating Photoresist and Measuring Breaking Time) θ Dissolving 1 part by weight of the photosensitive resin i obtained in Example 、, and 24 parts by weight of triethanolamine in 5-25 parts by weight In a portion of propylene glycol monomethyl acetate vinegar, a liquid positive resist (photosensitive composition) was prepared by filtration through a filter (PTFE filter). The photoresist was coated on a tantalum wafer (diameter: 4 inches) using a spin coater to pre-bake for 9 seconds at 11 (r, and a film of 5 〇 was obtained). (The wavelength is 248 nm), the photoresist film is exposed, followed by baking at noc (post-exposure heating) for 9 sec. Then, under 23, using a developing solution (2.38% by weight of tetramethyl hydroxide) Ammonium aqueous solution), the failure time is measured. Among them, the failure time refers to the number of seconds required to make the residual film disappear after irradiation with a certain energy. As a result, the failure time is 12 seconds when the exposure amount is 100 mJ, when 5 〇〇 The mJ was 3 seconds. Therefore, the photosensitive resin obtained in Example 1 1 319 750 50 200922947 was exposed to a xenon lamp, and an acid was generated from the photosensitive resin of the present invention, and the acid hydrolysis of the resin was not caused by the acid. The points ^ _ fat 丞邛 丞邛 脱离 , , , 对于 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖 胖According to Zhao Bu, +, Shi Menshi W, all know, ", the same method as above, modulation of the positive photoresist film, after exposure, Pre-bake 卩獍 卩獍 卩獍 里 里 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士In the range of 1 second, it is understood that the photosensitive resin 2 is also exposed to a lamp, and an acid is generated from the photosensitive tree of the present invention (1), and the acid dissociation portion of the polymer is partially separated by the acid. For 29 image liquids, 'from poor solubility to solubility. <Evaluation by exposure to extreme ultraviolet light (EUV)> (Preparation and coating of photoresist) Eight 100 parts by weight of the photosensitive resin obtained in Example 1 3% by weight of triphenyl sulfonamide in 2 parts by weight of propylene glycol military acetic acid test, filtered with a 0.2/zm crucible (PTFE filter) to prepare positive photoresist ° spin coating The photoresist solution was coated on a 4 inch crucible wafer treated with hexamethyldisilazane, and heated by a heating plate for about 9 G seconds before and after liGt to prepare a film thickness of 〇1. a film of uniformity of βπι. Using the same method, photosensitive resins 2 to 1 obtained in Examples 2 to 1 were used. A positive-type photoresist is separately modulated to form a film. (Measurement of sensitivity) Acceleration electrons of lGeV incident from a linear accelerator of Spr i ng_8 of a large-scale radiant light device, polarized electrons in the New SUBARU storage ring 319750 51 200922947 The generated synchronous accelerated radiant light is monochromatically converted into a light having a wavelength of 13.5 nm by using a molybdenum/niobium multilayer film as an exposure light. The liver is irradiated onto the photoresist film formed as described above. After 9 (rc was heat treated up and down for about 6 sec, it was subjected to a 2.38 wt% aqueous solution of 30 sec of tetramethylammonium hydroxide at 23 ° C). Next, the film thickness was measured by a non-contact type film thickness measurement after washing with water and drying. Various operations were performed by diversifying the exposure level, and the exposure amount at which the photoresist residual film thickness was zero was determined as the Eth sensitivity. As a result, with respect to the photoresists of Examples 1 to 1 , Eth was 〇 9 to 6 mJ/cm 2 , respectively. Therefore, it is understood that the photosensitive resin of the present invention is excellent in sensitivity. Further, the result of measuring the amount of gas generated from the photoresist in the exposure by the quadrupole mass spectrometer is less than that of the conventional ESCAP type chemical amplification photoresist having a small amount of gas. It is only about 1/2 to w. Among them, the smaller the amount of gas generated, the less the effect of the mask or the optical system, and the like. <Evaluation by Electron Tracing Apparatus> (Preparation and Coating of Photoresist) Density / gluten solution _ parts by weight of the photosensitive resin U 4 obtained in Example 1 to the triphenyl amide amine in 2 parts by weight of propylene glycol Monomethyl test = vinegar, prepared by filtration using a 0.2... filter (PTFE filter): t photoresist. The photoresist solution was rubbed by a spin coater on a 4 inch wafer to be added; the plate was heated to a film thickness of 〇1/zm for 90 seconds, and Examples 2 to 1 were used. () The obtained photosensitive resin 2 to \=^ 319750 52 200922947 was formed into a positive resist to form a film. The electron beam drawing device was used to accelerate the voltage of 3 〇 keV and the current value τ, in the above-mentioned photoresist film. On the top, the pattern of the line and the gap (Hne and space) of w〇nm is expected to be irradiated. After the irradiation, it is baked at 9 ° C for 60 seconds 'dip at tetrazolium hydroxide at 23 ° C. The aqueous solution was applied in a 2.38 wt% aqueous solution for 3 sec, and then rinsed with pure water and dried. The obtained pattern was evaluated by the following method. (sensitivity) The cross section of the obtained pattern was observed using a scanning electron microscope (SEM). 100. The minimum illumination energy of the line (line and gap 1: 丨) is used as the sensitivity. ~ (line edge roughness) The scanning line electron microscope (SEM) is used to observe the line pattern made under the above sensitivity. Line end roughness (LER). Further, the line end roughness was obtained by multiplying the standard deviation of the dispersion of each point at intervals of 1 〇 nm by three times along the line pattern of the obtained SEM image at a length of 1.5/z m. The smaller the roughness value, the smoother it is. As a result, with respect to the photoresists of Examples 1 to 10, when the sensitivity was 6 4 to 20/zC/cm2, the LER showed 2.0 to 6.0 nm, forming a good pattern. Further, with respect to the photoresists of Examples 1 to ί, an electron beam drawing device having an acceleration voltage of 50 keV was used, and it was confirmed that the resolution of 1 〇〇 ηη or less was obtained. In particular, in the photoresist of Example 7, it was confirmed that the resolution of 25 nm was obtained. Therefore, it was confirmed that the use of the photosensitive resin of the present invention can form a good pattern. 319750 53 200922947 [Simple description of the diagram] M. t »»&gt; [Main component symbol description]

Claims (1)

200922947 十、申請專利範圍: 1 . 一種感光性樹脂,具有下式〔1、自!ς _ 、,广所不之重複單位、下式 (2)所不之重複早位和下式(3)所-— 、7广八㈧)所不之重複單位之至少 方、以及下式(4)所示之重福&amp; 谡早位,必要時還具有下 式(5)所示之重複單位,200922947 X. Patent application scope: 1. A photosensitive resin with the following formula [1, self! ς _ , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , 4) The heavy weights shown in the early position, if necessary, have the repeating unit shown in the following formula (5). ⑴ »VS+、r7 x~ :價之烴基,…各自獨立地表示; :直鏈狀或分枝狀之煙基,各自獨立地表3 基’…7可-起形成2價之有機基,r表示陰離(1) »VS+, r7 x~ : a hydrocarbon group of a valence, ... each independently;; a linear or branched tobacco group, each independently of the table 3 base '...7 can form a divalent organic group, r represents Overcast (2)(2) 319750 55 4 200922947 (式(2)中’R8表示碳數2至9之直鏈狀或分枝狀之 烴基)319750 55 4 200922947 (in the formula (2), 'R8 represents a linear or branched hydrocarbon group having 2 to 9 carbon atoms) OHOH (5) 2.如申请專利範圍第丨項之感光性樹脂,其中,i所示之 陰離子係下式(6)所示之陰離子, 不 CkHmFnSOs' (6) 數中,卜…各自獨立地表示0以上之整 數,m為〇時,k為1至8之整# w 數n為2k+l,式π) 為全氟烷基磺酸鹽離子;n A 飞㈧) m ., 马0日寸,让為1至15之敕叙 m為1以上之整數,式(6) ^之整數’ 鹽離子或烧基苯磺酸鹽離S基^酸鹽離子、苯石黃酸 上之整數時,k為1至10 m n各自獨立地為1以 苯磺酸鹽離子、經氟取代 式(6)為經氟取代之 元基笨磺酸鹽離子或經氟取 319750 56 200922947 代之烷基磺酸鹽離子)。 3. 如申請專利範圍第1項之感光性樹脂,其中,Γ所示之 陰離子係下式(7)所示之雙(全氟烷基磺醯)亞胺離子, C CpF 2p + l S〇2 ) 2N (7) (式中,p表示1至8之整數)。 4. 如申請專利範圍第1項之感光性樹脂,其中,Γ所示之 陰離子係下式(8)所示之陰離子, 〇2宁/N、S02 〇2. (8) ^2 Ο 5. 如申請專利範圍第1項之感光性樹脂,其重量平均分子 量為2,000至100, 〇〇〇,上式(1)之重複單位數a、上式 (2)之重複單位數b、上式(3)之重複單位數c、上式(4) 之重複單位數d、及上式(5)之重複單位數e係滿足 a/(a+b+c+d+e)= 0. 001 至 〇. 3、(b+c)/(a+b+c+d+e) = 〇. 1 至 0·5、(d+e)/(a+b+c+d+e) = 〇. 5 至 〇· 8、及 e/(d+e) =〇 至 0. 2。 6. 如申請專利範圍第丨項之感光性樹脂,其中,主鏈之末 端基為氫原子或曱基。 ?· 一種感光性組成物,係為使申請專利範圍第i項至第6 項中任一項之感光性樹脂溶解於有機溶劑之溶液。 319750 57 200922947 七、指定代表圖:無 (一) 本案指定代表圖為:第()圖。 (二) 本代表圖之元件符號簡單說明: 八、本案若有化學式時,請揭示最能顯示發明特徵的化學式:(5) 2. The photosensitive resin according to the ninth aspect of the invention, wherein the anion represented by i is an anion represented by the following formula (6), and is not represented by the number of CkHmFnSOs' (6). An integer greater than 0, when m is 〇, k is an integer from 1 to 8 and the number n is 2k+l, and the formula π) is a perfluoroalkyl sulfonate ion; n A is flying (eight)) m., horse 0 In the case of 1 to 15, let m be an integer of 1 or more, and the formula (6) ^the integer ' when the salt ion or the alkylbenzenesulfonate is separated from the S group of the acid salt or the benzoic acid , k is from 1 to 10 mn, each independently is 1 with a besylate ion, substituted with a fluorine (6) is a fluorine-substituted elemental sulfonate ion or a fluorine is used for 319750 56 200922947 alkyl sulfonate Acid salt). 3. The photosensitive resin according to the first aspect of the patent application, wherein the anion represented by Γ is a bis(perfluoroalkylsulfonyl)imide ion represented by the following formula (7), C CpF 2p + l S〇 2) 2N (7) (where p represents an integer from 1 to 8). 4. The photosensitive resin according to item 1 of the patent application, wherein the anion represented by Γ is an anion represented by the following formula (8), 〇 2 N / N, S02 〇 2. (8) ^ 2 Ο 5. The photosensitive resin of claim 1, wherein the weight average molecular weight is 2,000 to 100, 〇〇〇, the number of repeating units a of the above formula (1), the number of repeating units b of the above formula (2), and the above formula ( 3) The number of repetition units c, the number of repetition units d of the above formula (4), and the number of repetition units e of the above formula (5) satisfy a/(a+b+c+d+e)= 0. 001 to 〇. 3, (b+c)/(a+b+c+d+e) = 〇. 1 to 0·5, (d+e)/(a+b+c+d+e) = 〇. 5至〇·8, and e/(d+e) =〇 to 0. 2. 6. The photosensitive resin of claim 3, wherein the terminal group of the main chain is a hydrogen atom or a fluorenyl group. A photosensitive composition which is a solution in which the photosensitive resin of any one of the above items (i) to (6) is dissolved in an organic solvent. 319750 57 200922947 VII. Designated representative map: None (1) The representative representative of the case is: (). (2) A brief description of the symbol of the representative figure: 8. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: 8 3197508 319750
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