200922746 九、發明說明： 本申請案係主張2007年9月5日申請之美國暫時專利申 請案第60/967, 472號之權益，在此將其倂入供參照。 【發明所屬之技術領域】 本發明一般係有關於半導體處理裝置，以及特別關於一 種用以硏磨半導體晶圓之硏磨裝置及方法。 【先前技術】 已有使用濕式清洗方法（其利用流體化學藥物）來移除半 導體晶圓之二側上的微粒。然而，藉由傳統濕式清洗方法 並無法輕易移除嵌入該等半導體晶圓中的微粒。 可使用化學機械硏磨（CM P)技術（其用以將半導體晶圓之 表面平坦化）以移除此等微粒。一般而言，一傳統C Μ P裝 置包括一硏磨台，其設有一硏磨墊以及一支撐半導體晶圓 之晶圓載體，其中該半導體晶圓係藉由靠著該硏磨墊按壓 該晶圓而被硏磨。該CMP裝置也包括一晶圓清潔器，用以 清潔該等經硏磨的晶圓並使其乾燥。 然而，該傳統CMP裝置係設計以僅硏磨該等半導體晶圓 之前側（爲形成於該等晶圓上之半導體元件的側邊），以使 沉積於該等晶圓之前側上的表面層平坦化。因此，若該傳 統CMP裝置被用以移除該等半導體晶圓之兩側微粒，則該 等晶圓必須於該CMP裝置中被處理二次以硏磨該等晶圓之 二側邊。 爲了硏磨該等晶圓之前側，該等晶圓係設在該CMP裝置 中並接著硏磨，以便硏磨該等晶圓之前側。該經硏磨之晶 200922746 Η接者於該等晶圓自該CMP裝置移出前，於·該晶jjj 中被清洗及乾燥。爲了硏磨該等晶圓之背側，自該 置移出之該等晶圓必須再設在該CMP裝置中並接著 以便硏磨該等晶圓之背側。該等經硏磨之晶圓必須 該等晶圓自該CMP裝置移出前，於該晶圓清潔器中 清洗及乾燥。 有鑑於此’需要一種用以硏磨半導體晶圓（其可以 的方式硏磨該等晶圓之兩側）之硏磨裝置及方法。 【發明內容】 一種用以硏磨半導體晶圓之硏磨裝置及方法，使 裝卸站及至少一翻轉機器人晶圓處理裝置以處理 圓’使得該晶圓可於多重硏磨台上被硏磨。該翻轉 晶圓處理裝置操作以使該晶圓翻轉，使得該等晶圓 可於一第一硏磨台上被硏磨以及該等晶圓之另一側 於一第二硏磨台上被硏磨。 依據本發明之實施例之硏磨裝置包括第一及第二 元、第一、第二、第三及第四裝卸站，以及一翻轉 晶圓處理裝置。該等第一及第二硏磨單元之每一者 磨半導體晶圓之一側。該等第一及第二硏磨單元之 包括一硏磨台以及一晶圓載具，其中該晶圓載具係 持一半導體晶圓並移動該半導體晶圓以及自該硏 動°該晶圓載具係更構成將該半導體晶圓移至該硏 方。該等第一、第二 '第三及第四裝卸站之每一者 清潔器 CMP裝 硏磨， 接著於 再次被 更有效 用多重 該等晶 機器人 之一側 可接著 硏磨單 機器人 構成硏 每一者 構成固 磨台移 磨台上 係構成 200922746 於一時間內裝載該等半導體晶圓之一。裝設該等第一及第 二裝卸站，使得該第一硏磨單元位在該等第一與第二裝卸 站之間。裝設該等第三及第四裝卸站，使得該第二硏磨單 元位在該等第三與第四裝卸站之間。該翻轉機器人晶圓處 理裝置係位在該等第二與第三裝卸站之間。該翻轉機器人 晶圓處理裝置係構成將該半導體晶圓自該第二裝卸站轉送 至該第三裝卸站。該翻轉機器人晶圓處理裝置更構成於該 半導體晶圓自該第二裝卸站轉送至該第三裝卸站時，用以 翻轉該半導體晶圓。 依據本發明之實施例之硏磨半導體晶圓之方法，包含於 一第一晶圓載具上之第一裝卸站、第一硏磨台以及第二裝 卸站之間移動一半導體晶圓，包括使用該第一晶圓載具硏 磨該第一硏磨台上之該半導體晶圓之第一側；於一第二晶 圓載具上之第三裝卸站、第二硏磨台以及第四裝卸站之間 移動該半導體晶圓，包括使用該第二晶圓載具硏磨該第二 硏磨台上之該半導體晶圓之第二側；以及利用一翻轉機器 人晶圓處理裝置自該第二裝卸站轉送該半導體晶圓至該第 三裝卸站，包括當該半導體晶圓自該第二裝卸站轉送至該 第三裝卸站時，翻轉該半導體晶圓。 藉由本發明之原理之例示說明，本發明之其它觀點及優 點將由下述發明說明結合附隨圖式而變得顯而易知。 【實施方式】 參照第1圖及第2圖，其說明依據本發明之一實施例之 200922746 硏磨裝置10。第1圖爲該硏磨裝置10之俯視圖。第2圖爲 該硏磨裝置10之硏磨站20之側視圖。該硏磨裝置10包含 該硏磨站2 0、晶圓儲存站1 〇 2、輸入緩衝站1 0 5、第一晶圓 轉送裝置150、第一晶圓轉送裝置160、弟二晶圓轉送裝置 210、第一晶圓清潔器220以及第二晶圓清潔器220’。 該硏磨站20爲一以類似窗形之機構（沒有顯示）所圍之結 構，該類似窗形之機構可被開啓以將半導體晶圓轉送至該 硏磨站20中及自該硏磨站20轉送出。該硏磨站20包含一 第—硏磨單元250a、一第二硏磨單元250b、第一對裝卸站 15a與15a’、第二對裝卸站15b與15b’、第三對裝卸站15c 與1 5 c ’、第四對裝卸站1 5 d與1 5 d ’、以及一晶圓翻轉裝置 5 0。在接下來之說明中，相似之元件在此將有時被參照使 用其不具字尾之共同的元件符號。 該硏磨站20之每一硏磨單元250包含一硏磨台256、一 第一晶圓載具260以及一第二晶圓載具260’。該硏磨台256 可於一時間內被用以同時硏磨二片半導體晶圓。該硏磨台 256可繞一軸旋轉或運轉。在某些實施例中，一硏磨墊255 可於半導體晶圓之化學及機械硏磨處理時被附著至該硏磨 台25 6。含有具磨損作用的微粒及/或化學藥物的一或多種 稀泥微粒（諸如，苛性鉀（KOH))可被用以與該硏磨墊25 5來 硏磨半導體晶圓。每一硏磨單元250可更包含一墊調整器 (沒有顯示），用以於該硏磨處理期間調整該硏磨墊25 5之表 面，以更新該硏磨墊之表面使其可作適當硏磨。 200922746 如第1及2圖中所示，該硏磨單元250a及250b之每一 晶圓載具260包含一晶圓載體262、一載軸264以及—轉動 垂直驅動機構266。設#該晶圓載體262以固持一半導體晶 圓，使得將被硏磨之該晶圓表面面向該硏磨墊255。該晶圓 載體262係透過該載軸264而連接至該轉動垂直驅動機構 266。該轉動垂直驅動機構266係透過該經連接之載軸264 而控制該晶圓載體262之轉動與垂直的動作。因此，該轉 動垂直驅動機構266係構成藉由轉動該經連接之載軸 264，以轉動該晶圓載體262’並藉由垂直移動該經連接之 載軸264以垂直地移動該晶圓載體262。爲了硏磨半導體晶 圓’該等晶圓載體262係往下移動或藉由該各個轉動垂直 驅動機構266而使其低於該各個硏磨墊25 5以，藉由該等 晶圓載體262之固持以按壓該等晶圓於該各個硏磨墊255 上。 該硏磨站20之裝卸站1 5容納轉送至該裝卸站丨5之晶圓 或自該裝卸站15轉送晶圓。該裝卸站15之每一者係構成 於一時間內裝載一半導體晶圓。該裝卸站15係構成接收或 卸載自一晶圓載體262或另一裝置（諸如該第二晶圓運送裝 置160)所釋出之晶圓，並放置或裝載一晶圓於一晶圓載體 或另一裝置上。 如第1圖中所示’該裝卸站15及該等成對硏磨單元25〇a 與2 5 0 b係以下列方式配置：該第一對裝卸站1 5 a及1 5 a，係 位在該第一硏磨單元250a的前面（亦即，最接近該第二晶 -10- 200922746 圓運送裝置160)、該第二對裝卸站15b及15b’係位在該第 一硏磨單元250a與該第三對裝卸站15c及15c’之間、該第 二硏磨單元25 0b係位在該第三對裝卸站15c及15c’與該第 四對裝卸站1 5 d及1 5 d ’之間、以及該第四對裝卸站1 5 d及 15d’係位在該第二硏磨單元2 5 0b後面。此外，該等裝卸站 15a、15b、15c及15d係以直線方式配置，以及該等裝卸站 1 5 a ’、1 5 b ’、1 5 c ’及1 5 d ’也是以直線方式配置。亦即，該等 裝卸站15a、15b、15c及15d係沿著一直線對齊，以及該等 裝卸站15a’、15b’、15c’及15d’係沿著另一直線對齊。 構成該硏磨站20使得（1)該第一硏磨單元25 0a之第一晶 圓載具260a可以直線方式於該第一及第二裝卸站！5a與 15b之間移動，以及該第二硏磨單元250b之第一晶圓載具 2 6 0b可以直線方式於該第三及第四裝卸站15c與15d之間 移動，以及（2)該第一硏磨單元250a之第二晶圓載具260a， 可以直線方式於該第一及第二裝卸站15a，與15b，之間移 動’以及該第二硏磨單元250b之第二晶圓載具260b’可以 直線方式於該第三及第四裝卸站1 5 c ’與1 5 d，之間移動。 也可構成該硏磨站20使得（1)該第一硏磨單元250a之第 —晶圓載具260a也可以直線方式於該第一、第二及第三裝 卸站15a、15b與15c之間移動’以及該第二硏磨單元250b 之第一晶圓載具260b可以直線方式於該第二、第三及第四 裝卸站15b、15c與15d之間移動，以及（2)該第—硏磨單元 250a之第二晶圓載具260a’可以直線方式於該第一、第二及 200922746 第三裝卸站15a’、15b’與15c’之間移動’以及該第二硏磨 單元250b之第二晶圓載具260b’也可以直線方式於該第 二、第三及第四裝卸站15b’、15c’與15d’之間移動。 如第2圖中所示，爲了於該等裝卸站1 5之間直線移動該 晶圓載具260，該等晶圓載具260係連接至至少一可直線移 動該等晶圓載具之晶圓搬運裝置22。可被用以直線移動該 等晶圓載具260之晶圓搬運裝置22之例示係揭露於美國專 利第7,22 3,1 5 3號，其在此倂入供參照。 參照第3~5圖，進一步敘明該硏磨站20之該等裝卸站15 之一。第3圖爲該裝卸站15之俯視圖，以及第4圖爲第3 圖之該裝卸站沿著線Q Q切下之剖面視圖。該裝卸站1 5包 含基部190、環狀壁195、升降器200、晶圓盤211、第一· 多重噴嘴240、第二多重噴嘴25 0、排放通道260、第一流 體通道270以及第二流體通道272。該等流體通道270與 272可被連接至流體來源（沒有顯示）。該排放通道26〇可被 連接至一排放泵（沒有顯示）。 該環狀壁1 9 5與該晶圓盤2 1 1係裝配於該基部上。該晶 圓盤211於其中央包含一孔’以便該升降器2〇〇可設在該 基部190的中央。如第4圖中所示，該升降器200係透過 一升降活塞202而連接至升降氣缸204。該升降器200爲一 晶圓固持裝置’用以自一晶圓載體（也可爲習知之硏磨 頭）（諸如’該等晶圓載體262a、262a，、262b及262b，）或從 一晶圓載體舉起及降下一晶圓。該升降氣缸2〇4係連接至 -12- 200922746 該第一流體通道270並藉由透過該第一流體通道270供應 一流體而操作。該升降器200藉由該升降氣缸204而上移 及下移。 如第4圖中所示，該升降器200係於該環狀壁195之上 表面被上升至一晶圓運送位置，以自一晶圓運送裝置（諸 如，該第二晶圓運送裝置160)、自一晶圓載體（諸如，該等 晶圓載體262a、262a’、262b以及262b’之一）、或者自一晶 圓翻轉裝置（諸如該晶圓翻轉裝置50)接收一半導體晶圓 W。在該升降器2 00接收該晶圓W後，將該升降器向下移 至該晶圓盤2 1 1下方，以放置該晶圓W於該晶圓盤2 1 1上。 以此方式，該晶圓W卸載於該裝卸站1 5上。 如第4圖中所示，爲了將該晶圓W自該升降器200轉送 至一晶圓運送裝置（諸如該第三晶圓運送裝置2 1 0)、一晶圓 載體（諸如’該等晶圓載體262a、262a，、262b以及262b， 之一）、或者一晶圓翻轉裝置（諸如該晶圓翻轉裝置50)，該 升降器200於該環狀壁195之上表面被上升至一晶圓運送 位置。 如第4圖中所示，該第—多重噴嘴24〇係裝配於該基部 1 9 0的頂部以及該第二多重噴嘴2 5 0係裝配於該環狀壁1 9 5 之內側。該第一及第二噴嘴24〇與25〇係連接至該第二流 體通道272並用以噴灑諸如去離子（DI)水之流體（其係透 過該第二流體通道272而被供應）。經使用之流體，諸如經 使用之D . I ·水係藉由該排放泵（沒有顯示）而透過該排放通 -13- 200922746 道260排出。當該第一及第二噴嘴24〇與250之其中一者 或兩者位在該裝卸站1 5上時，允許該裝卸站1 5清洗一晶 圓及/或一晶圓載體。 參照第5(a)及5(b)圖，其說明自第3與4圖之該裝卸站 15裝載一半導體晶圓w至可爲該等晶圓載體262a~262b， 之一者之晶圓載體2 6 2上之處理順序。第5 (a)及5 (b)圖係 該裝卸站1 5之連續剖面視圖。如第5 (a)圖中所述，在將該 晶圓W設在該裝卸站15之晶圓盤21 1上後，該晶圓載體 262參照前述第4圖而設置在該裝卸站15上。如第5(a)圖 中所述’該晶圓載體262可包括一保持環280，以於硏磨處 理期間限制該晶圓W。接著，如第5 (b)中所示，該升降器 200往上移動且該升降器上之該晶圓w使用由真空通道285 所供應之真空而被該晶圓載體262接收。在該晶圓W被該 晶圓載體262接收後，往下移動該升降器200。爲了自該晶 圓載體262卸載該晶圓W，移除由該真空通道285所供應 之真空’其自該晶圓載體262將該晶圓W釋出至該裝卸站 15之升降器200上。接著，該裝卸站15可藉由噴灑D.1. 於該晶圓載體262上以清洗該晶圓載體262。 回頭參照第1及2圖，裝設該晶圓翻轉裝置5 0於該第二 對裝卸站1 5 b及1 5 b，與該第三對裝卸站1 5 c及1 5 c ’之間。 該晶圓翻轉裝置5 0爲一機械人晶圓處理裝置，其係構成將 晶圓自該第二對裝卸站1 5 b及1 5 b，轉送至該第三對裝卸站 15c及15C，。該翻轉裝置50之機械手臂51可伸至該第二對 -14- 200922746 裝卸站15b及15b’以自該第二對裝卸站i5b及15b，拾取該 等晶圓。該翻轉裝置50之機械手臂51係更構成於其自該 第二對裝卸站15b及15b’拾取該等晶圓後，用以翻轉該等 晶圓使得其可在翻轉該等晶圓後，將該等晶圓轉送至該第 三對裝卸站1 5 c及1 5 c ’。在此，對一半導體晶圓翻轉意指 將該晶圓轉動1 80度，以顛倒該晶圓之主要側邊或表面。 例如，若該晶圓之前側一開始係朝下面向，則在翻轉該晶 圓後，該晶圓之前側將朝上面向。 該晶圓清潔器220與220’爲以類似窗形之機構（沒有顯示） 所圍之結構，其可被開啓以將半導體晶圓轉送至該等晶圓 清潔器中或從該等晶圓清潔器轉送出來。該第一晶圓清潔 器220包含一晶圓接收站222、一第一清潔站224、一第二 清潔站226、一乾燥站228、一輸出緩衝站230、一第一晶 圓運送裝置23 2、一第二晶圓運送裝置234、一第三晶圓運 送裝置236、以及一第四晶圓運送裝置238。該晶圓清潔器 220係構成清潔並乾燥該等晶圓之前側及後側二者。該第二 晶圓清潔器220’可等同於該第一晶圓清潔器220。 裝設該晶圓清潔器220與220’使得該等晶圓清潔器之晶圓 接收站222鄰近於該第三晶圓運送裝置2 1 0，以及該等晶圓 清潔器之輸出緩衝站23〇鄰近於該第一晶圓運送裝置150。 該晶圓接收站222容納由該第三晶圓運送裝置210所轉 送之半導體晶圓。該第一晶圓運送裝置2 3 2自該晶圓接收 站222轉移晶圓至該第—清潔站224。該第二晶圓運送裝置 200922746 234自該第一清潔站224轉移晶圓至該第二清潔站226。該 第三晶圓運送裝置236自該第二清潔站226轉移晶圓至該 乾燥站2 2 8。該第四晶圓運送裝置2 3 8自該乾燥站2 2 8轉移 晶圓至該輸出緩衝站230。該等晶圓係藉由該第一晶圓運送 裝置1 5 0從該輸出緩衝站2 3 0移出，並接著被轉移至該晶 圓儲存站1 02。 該晶圓清潔器220之該第一及第二清潔站224及226利 用D.I.水及/或化學藥物（諸如，氫氧化銨（NH4〇H)、稀釋的 氫氟酸（HF)及有機化學藥物），自晶圓表面移除稀泥微粒。 該晶圓接收站22 2也可構成利用D.I.水及/或化學藥物（諸 如，NH4〇H、稀釋的HF及有機化學藥物），自晶圓表面移 除稀泥微粒。在該第二清潔站226完成該清潔處理後，以 D . I ·水沖洗晶圓並接著於該乾燥站2 2 8中使其乾燥。 該晶圓儲存站1 02容納半導體晶圓或其它可比較而將由 該硏磨站2 0所硏磨之物件。該晶圓儲存站1 〇 2也可容納半 導體晶圓或其它可比較而已被該硏磨站20及該晶圓清潔 器220與220’所硏磨及清潔的物件。 如第1圖中所示，裝設該第一晶圓運送裝置15〇於該晶 圓儲存站102與該輸入緩衝站105之間以及該晶圓儲存站 102與該晶圓清潔器220及220,之間，使得該第一晶圓運 送裝置150之機械手臂可自該晶圓儲存站1〇2轉移晶圓至 該輸入緩衝站105’以及自該晶圓清潔器220與220,之輸 出緩衝站230轉移至該晶圓儲存站1〇2。 -16 - 200922746 裝設該輸入緩衝站1 05於該第一與第二晶圓運送裝置 150與160之間。該輸入緩衝站105容納將被該硏磨站20 硏磨之晶圓。 如第1圖中所示，裝設該第二晶圓運送裝置1 60於該輸 入_衝站105及該硏磨站20之第一對裝卸站15a與15&，之 間’使得該第一晶圓運送裝置160之機械手臂可自該輸入 緩衝站105轉移晶圓至該硏磨站20之第一對裝卸站15a與 15a’。由於當該第二晶圓運送裝置160之機械手臂進入該 硏磨站2 0時會被污染，故該第二晶圓運送裝置1 6 0可較佳 地藉由一分隔物1 6 1與該第一晶圓運送裝置1 5 0隔開，如 第1圖中所示，以防止該第二晶圓運送裝置16〇被該第一 晶圓運送裝置150污染。爲了保持該第—晶圓運送裝置15〇 之清潔’可設置一空氣濾清器單元（沒有顯示）於該第一晶 圓運送裝置150上方。 如第1圖中所示’裝設該第三晶圓運送裝置210於該硏 磨站20之第四對裝卸站丨5 d與1 5 d，以及該各個晶圓清潔器 2 2 0與2 2 0 ’之晶圓接收站2 2 2之間，使得該第三晶圓運送 裝B 210之機械手臂可自該第四對裝卸站15cl與15d，轉移 晶圓至該晶圓接收站222。 可裝設該第一及第三晶圚運送裝置150及21〇於各個直 線軌道155及215上，使得該等晶圓運送裝置可藉由各個 直，線裝置機構（沒有顯示）於該直線軌道上以直線方式移 動I °在將該等晶圓分別轉移至該輸入緩衝站1 〇5、該硏磨站 -17- 200922746 20及該晶圓清潔器220與220,前，可構成該等第一、第二 及第三晶圓運送裝置15〇、16〇及21〇之機械手臂以翻轉該 等晶圓。 參照第1及2圖’說明依照本發明之實施例於該硏磨裝 置10中處理半導體晶圓之方法。 首先’該第一晶圓運送裝置15〇將半導體晶圓自該儲存 站102轉送至該輸入緩衝站1〇5。 接著’該第二晶圓運送裝置16〇將該等晶圓自該輸入緩 衝站105轉送至該第一對裝卸站i5a及15a，，使得沒有形 成電晶體及電氣電路之該等晶圓之後側面向該第一裝卸站 1 5 a及1 5 a ’。亦即，該等晶圓之後側係向下面向該第一裝 卸站1 5 a及1 5 a ’。 接著，該第一硏磨單元250a之晶圓載體262a及262a’⑴ 分別直線移至該第一對裝卸站1 5 a及1 5 a ’，（ 2)自該第一裝 卸站15a及15a’接收該等晶圓，及接著（3)移至該第一硏磨 單元25 0a之硏磨台25 6a。 接著，該等晶圓載體262a及262a’向下移至該硏磨台256a 之該硏磨墊255a並接著利用一第一稀泥硏磨該等晶圓。因 此，該等晶圓之後側於該硏磨墊25 5a上被硏磨。 接著，該等晶圓於硏磨墊255a上被硏磨後，該等晶圓載 體262a及262a’自該硏磨墊255 a往上移動。 接著，該第一硏磨單元250a之晶圓載體262a及262a’（l) 分別直線移至該第二對裝卸站1 5 b及1 5 b ’’（ 2)將該等晶圓 -18 - 200922746 轉送至該第二裝卸站15b及15b’ ’使得該等晶圓之後側面 向該第一裝卸站15b及15b’’以及接者（3)返回至該第—裝 卸站1 5 a及1 5 a ’。 接著，該晶圓翻轉裝置50之機械手臂（1)接近該第二裝卸 站15b ’（2)自該第二裝卸站15b拾取該晶圓，（3)翻轉該晶 圓使得該晶圓之後側朝上面向，（4)將該晶圓轉送至該第三 裝卸站1 5 c ’使得沒有形成電晶體及電氣電路之該晶圓的前 側面向該第三裝卸站15c，（5)接近該第二裝卸站i5b，，（6) 自該第二裝卸站15b’拾取該晶圓’（7)將該晶圓翻轉使得該 晶圓之後側朝上面向，（8)將該晶圓轉送至該第三裝卸站 1 5 c ’，使得沒有形成電晶體及電氣電路之該晶圓之前側面 向該第三裝卸站15c’，及（9)自該第三裝卸站15c，移走。 接著，該第二硏磨單25 Ob之該等晶圓載體26 2b及262b，（l) 分別直線移至該第三裝卸站15c及15c’ ’（2)自該第三裝卸 站15c及15c’接收該等晶圓，及接著（3)移至該第二硏磨單 元250b之該硏磨台256b。 接著，該等晶圓載體262b及262b ’向下移至該硏磨台25 6b 之該硏磨墊255b並接著利用一第二稀泥硏磨該晶圓，其中 該第二稀泥之構成係不用於該第一稀泥。或者，於該硏磨 台25 6a上所用之第一稀泥可被用在該硏磨台25 6b以取代 該第二稀泥。因此，該等晶圓之前側於該硏磨墊2 5 5 b上被 硏磨。 接著，該等晶圓於硏磨墊255b上被硏磨後’該等晶圓載 -19- 200922746 體262b及262b’自該硏磨墊255b往上移動。 接著，該第二硏磨單元250b之晶圓載體262b及262b，（l) 分別直線移至該第四裝卸站15d及15d’，（2)將該等晶圓轉 送至該第四裝卸站1 5 d及1 5 d ’，使得該等晶圓之前側面向 該第四裝卸站15d及15d’，以及接著（3)返回至該第三裝卸 站 15c 及 15c’ 。 接著，該第三晶圓運送裝置210自該第四裝卸站I5d及 1 5d’將該等晶圓移出’並接著將該等晶圓分別轉送至該晶 圓清潔器220及220’之該晶圓接收站222。該第三晶圓運 送裝置2 1 0可在將該等晶圓轉送至該晶圓接收站222以 前’翻轉該等晶圓。接著’該等晶圓於該晶圓清潔器220 及220’中被清潔及乾燥。 接著’在該晶圓已於該晶圓清潔器220及220,中被處理 過後’該第一晶圓運送裝置1 50自該晶圓清潔器220及220, 之輸出緩衝站2 3 0將該等晶圓移出。 接著，該第一晶圓運送裝置1 5 0將該等晶圓轉送至該儲 存站1 0 2。 在此實施例中’該等晶圓之後側已首先於該第一硏磨單 元250a中被硏磨’以及接著該等晶圓之前側已於該第二硏 磨單元250b中被硏磨。在另一實施例中，也可於該第一硏 磨單元250a中硏磨該等晶圓之前側及及接著於該第二硏磨 單元25 0b中硏磨該等晶圓之後側。在此另一實施例中，該 等晶圓係藉由該第二晶圓運送裝置160而轉送至該第—裝 -20- 200922746 卸站1 5 a及1 5 a ’，使得該等晶圓之前側面向該第—裝卸站 15a及15a’’以及藉由該晶圓翻轉裝置自該第二裝卸站 15b及15b’轉送至該第三裝卸站i5c及i5c，，使得該等晶 圓之後側面向該第三裝卸站1 5 c及丨5 C，。 參照第1及2圖，其說明依照本發明之另一實施例於硏 磨裝置10中處理半導體晶圓之另一方法。 首先’該第一晶圓運送裝置15〇將半導體晶圓自該儲存 站102轉送至該輸入緩衝站ι〇5。 接著’該第二晶圓運送裝置16〇將該等晶圓自該輸入緩 衝站105轉送至該第一對裝卸站i5a及15a，，使得該等晶 圓之第一側（前側或後側）面向該第一裝卸站1 5 a及丨5 a，。 接著’該第一·硏磨單元250a之晶圓載體262a及262a，⑴ 自其於該硏磨台2 5 6 a上之初始位置，分別直線移至該第一 對裝卸站1 5 a及1 5 a，，（ 2)自該第一裝卸站1 5 a及1 5 a，接收 該等晶圓’及接著（3)返回至該第一硏磨單元250a之硏磨台 25 6a ° 接著’該等晶圓載體262a及262a，向下移至該硏磨台256a 之該硏磨墊25 5a並接著利用一第一稀泥硏磨該等晶圓。因 此’該等晶圓之第一側於該硏磨墊25 5 a上被硏磨。 接著，該等晶圓於硏磨墊255a上被硏磨後，該等晶圓載 體262a及262a’自該硏磨墊255a往上移動。 接著，該第一硏磨單元250a之晶圓載體262a及262a，（1) 分別直線移至該第三對裝卸站15c及15c，，（2)將該等晶圓 -21 - 200922746 轉送至該第三對裝卸站1 5 c及1 5 c ’，使 側面向該第三對裝卸站1 5 c及1 5 c ’’以. 第一裝卸站1 5 a及1 5 a ’。 接著，該第二硏磨單250b之該等晶圓I 自其於該硏磨台256b上之初始位置，分 裝卸站15c及15c，，（2)自該第三裝卸站 等晶圓，及接著（3)返回至該第二硏磨單3 256b ° 接著，該等晶圓載體262b及262b’向下 之該硏磨墊255b並接著利用一第二稀泥 中該第二稀泥之構成係不用於該第一稀 磨台25 6 a上所用之第一稀泥可被用在i 代該第二稀泥。因此，該等晶圓之第一 上再被硏磨。 接著，該等晶圓於硏磨塾255b上被硏 體262b及262b’自該硏磨墊25 5b往上卷 接著，該第二硏磨單元2 5 0b之晶圓載 分別直線移至該第四裝卸站1 5 d及1 5 d， 送至該第四裝卸站15d及I5d，，使得該 向該第四裝卸站15d及15d，，以及接著 卸站1 5 c及1 5 c ’。 接著，該第三晶圓運送裝置210將該 卸站1 5 d及1 5 d ’移出，並接著將該等晶 得該等晶圓之第一 及接著（3 )返回至該 I 體 262b 及 262b’（l) 別直線移至該第三 1 5 c及1 5 c ’接收該 Ϊ； 250b之該硏磨台 移至該硏磨台256b 丨硏磨該等晶圓，其 泥。或者，於該硏 芝硏磨台256b以取 側於該硏磨墊25 5b 磨後，該等晶圓載 ^動。 體 262b 及 262b’（l) ，（2)將該等晶圓轉 等晶圓之第一側面 (3)返回至該第三裝 等晶圓自該第四裝 圓轉送至該晶圓清 -22- 200922746 潔器220及220’之該等晶圓接收站222。該第三晶圓運送 裝置210可在將該等晶圓轉送至該晶圚接收站222以前， 翻轉該等晶圓。 接著，在該晶圓已於該晶圓清潔器220及220’中被處理 過後，該第一晶圓運送裝置150自該晶圓清潔器220及220, 之輸出緩衝站230將該等晶圓移出。 接著，該第一晶圓運送裝置1 50將該等晶圓轉送至該儲 存站1 0 2。 參照第1及2圖，其說明依照本發明之另一實施例於硏 磨裝置10中處理半導體晶圓之另一方法。 首先’該第一晶圓運送裝置150將晶圓自該儲存站1〇2 轉送至該輸入緩衝站1〇5。 接著1 ’該第二晶圓運送裝置160將該等晶圓自該輸入緩 衝站105轉送至該第一對裝卸站i5a及i5a’，使得該等晶 圓之第一側（即側或後側）面向該第一裝卸站l5a及l5a,。 接者’該弟—硏磨單元250a之晶圓載體262a及262a，（1) 自其於該硏磨台2 5 6 a上之初始位置，分別直線移至該第— #裝卸站15a及l5a，，（2)自該第一裝卸站15a及15a，接收 ^等晶圓’及接著（3)返回至該第一硏磨單元25 0a之硏磨台 2 5 6a。 接者’該等晶®載體262a及262a，向下移至該硏磨台256a 之該硏磨塾25 5 a並接著利用—第一稀泥硏磨該等晶圓。因 此’該等晶圓之第〜側於該硏磨墊255a上被硏磨。 -23- 200922746 接著，該等晶圓於硏磨墊255a上被硏磨後，該等晶圓載 體262a及262a’自該硏磨墊255a往上移動。 接著，該第一硏磨單元250a之晶圓載體262a及262a’（1) 分別直線移至該第二對裝卸站15b及15b’，（2)將該等晶圓 轉送至該第二對裝卸站1 5b及1 5b ’，使得該等晶圓之第一 側面向該第二對裝卸站15b及15b’，以及接著（3)返回至該 第一裝卸站1 5 a及1 5 a ’。 接著，該第二硏磨單元25 0b之該等晶圓載體262b及 262b’（l)自其於該硏磨台25 6b上之初始位置，分別直線移 至該第二對裝卸站15b及15b’，（2)自該第二對裝卸站15b 及15b’接收該等晶圓，及接著（3)返回至該第二硏磨單元 250b之該硏磨台256b。 接著，該等晶圓載體26 2b及26 2b’向下移至該硏磨台256b 之該硏磨墊25 5b並接著利用一第二稀泥硏磨該等晶圓，其 中該第二稀泥之構成係不用於該第一稀泥。或者，於該硏 磨台256a上所用之第一稀泥可被用在該硏磨台256b以取 代該第二稀泥。因此，該等晶圓之第一側於該硏磨墊25 5 b 上再被硏磨。 接著，該等晶圓於硏磨墊25 5b上被硏磨後，該等晶圓載 體262b及262b’自該硏磨墊25 5b往上移動。 接著，該第二硏磨單元250b之晶圓載體262b及262b’（1) 分別直線移至該第四裝卸站15d及15d’，（2)將該等晶圓轉 送至該第四裝卸站1 5 d及1 5 d ’，使得該等晶圓之第一側面 -24- 200922746 向該第四裝卸站15d及15d，’以及接著（3)返回至該第二裝 卸站15b及15b，。 接著’該第三晶圓運送裝置210將該等晶圓自該第四裝 卸站15d及I5d’移出，並接著將該等晶圓轉送至該晶圓清 潔器220及220’之該等晶圓接收站222。該第三晶圓運送 裝置2 1 0可在將該等晶圓轉送至該晶圓接收站222以前， 翻轉該等晶圓。 接著，在該晶圓已於該晶圓清潔器220及220’中被處理 過後，該第一晶圓運送裝置150自該晶圓清潔器220及220, 之輸出緩衝站2 3 0將該等晶圓移出。 接著’該第一晶圓運送裝置150將該等晶圓轉送至該儲 存站1 0 2。 參照第6圖，其說明依據本發明之實施例之硏磨站20A。 第6圖爲該硏磨站20A之俯視圖。除了該硏磨站20A包含 二個晶圓翻轉裝置50與50’而該硏磨站20僅包含一晶圓翻 轉裝置50外，該硏磨站20A係類似於第1圖之硏磨站20。 該硏磨站20A可被用於該硏磨裝置10中以取代該硏磨站 20 ° 裝設該硏磨站20A之第一晶圓翻轉裝置50位於該第二裝 卸站1 5 b與該第三裝卸站1 5 c之間。該第一晶圓翻轉裝置 50將晶圓自該第二裝卸站15b轉送至該第三裝卸站15c。 在操作時，該第一晶圓翻轉裝置50之機械手臂接近該第二 裝卸站1 5 b，以自該第二裝卸站1 5 b拾取該晶圓。在自該第 -25- 200922746 一裝卸站15b拾取該晶圓後，該第—晶圓翻轉裝置50之機 械手臂翻轉該晶圚以便該晶圓在翻轉後轉送至該第三裝卸 站 1 5 c。 裝設該硏磨站20A之第二晶圓翻轉裝置50，位於該第二 裝卸站15b’與該第三裝卸站15c’之間。該第二晶圓翻轉裝 置5 0 ’將晶圓自該第二裝卸站1 5 b，轉送至該第三裝卸站 15c’。在操作時’該翻轉裝置50,之機械手臂接近該第二裝 卸站1 5 b ’’以自該第二裝卸站丨5 b，拾取該晶圓。在自該第 二裝卸站1 5 b ’拾取該晶圓後，該晶圓翻轉裝置5 0，之機械手 臂翻轉該晶圓以便該晶圓在翻轉後轉送至該第三裝卸站 15c，。 參照第6圖’說明依據本發明之實施例於具有該硏磨站 20A之硏磨裝置10中處理半導體晶圓之方法。除了該等晶 圓係藉由該第一晶圓翻轉裝置50而自該第二裝卸站15b翻 轉及轉送至該第三裝卸站15c，以及該等晶圓於該硏磨站 20A中藉由該第二晶圓翻轉裝置5〇’自該第二裝卸站15b， 翻轉及轉送至該第三裝卸站1 5 c ’外，該於具有該硏磨站2 0 A 之硏磨裝置1 0中處理晶圓之方法係類似於具有該硏磨站 20之硏磨裝置1 0中處理晶圓之方法。相對照下，該等晶圓 係藉由該硏磨站20中之該晶圓翻轉裝置5〇而自該第二裝 卸站1 5 b及1 5 b ’翻轉並轉送至該第三裝卸站1 5 c及丨5 c，。 參照第7 ~9圖’說明本發明之實施例之晶圓翻轉裝置 55。第7圖爲當該晶圓翻轉裝置55位於該第二裝卸站15b -26- 200922746 上方用以自該第二裝卸站15b拾取一半導體晶圓W時之該 晶圓翻轉裝置55之俯視圖。在第7圖中，該晶圓W之後 側係朝下面向該第二裝卸站15b。第8圖爲當該翻轉裝置 5 5位於該第三裝卸站丨5 c上方用以將該晶圓釋出至該第三 裝卸站1 5c上時之該晶圓翻轉裝置55之俯視圖。在第8圖 中’該晶圓W之前側係朝下面向該第三裝卸站i5c。第9 圖爲第7圖中沿著線XX之晶圓翻轉裝置5 5之縱向剖面視 圖。該晶圓翻轉裝置55可代替該硏磨站20中之該晶圓翻 轉裝置50，或者可代替該硏磨站20A中之該晶圓翻轉裝置 50及50’之每一者。 該晶圓翻轉裝置55包含第一夾取配件60 a、第二夾取配 件6 0b、支撐結構65及樞軸機構70。如第7圖中所示，該 支撐結構6 5係連接至該樞軸機構7 0，使得該樞軸機構7 0 將該支撐結構65裝於樞軸72附近。 該第一夾取配件60a包含一夾臂71a、夾取器72、直線 移動機構73a及制動器74a。該直線移動機構73a係裝配於 該支撐結構65上。該夾臂71a以移動方式操作連結於該夾 臂71a之開口處之該支撐結構65，使得該夾臂71a可藉由 該直線移動機構7 3 a而沿著該支撐結構65直線移動，其中 該直線移動機構7 3 a係連結至該夾臂7 1 a。該制動器74a係 裝配至該支撐結構65，使得當該夾臂7 1 a與該制動器74a 接觸時’停止沿著該支撐結構6 5之該夾臂7 1 a的直線動作。 該第二夾取配件60b包含夾臂71b、夾取器72、直線移 -27- 200922746 動機構7 3b及制動器74b。該直線移動機構7 3b係裝配於該 支撐結構6 5上。該夾臂7 1 b以移動方式操作連結於該夾臂 7 1 b之開口處之該支撐結構65，使得該夾臂7 1 b可藉由該 直線移動機構73b而沿著該支撐結構65直線移動，其中該 直線移動機構73b係連結至該夾臂71b。該制動器74b係裝 配至該支撐結構65，使得當該夾臂71b與該制動器74b接 觸時，停止沿著該支撐結構65之該夾臂7 1 b的直線動作。 爲了夾取該第二裝卸站15b上之該晶圓，該夾臂71a及 71b藉由其各自的直線移動機構73a及73b而移至互相靠 近，直到該夾臂與其各自的制動器74a及74b接觸，如第7 圖之箭頭Μ所示。爲了將該晶圓釋出至該第三裝卸站i5c 上，該等夾臂7 1 a及7 1 b藉由其各自的直線移動機構7 3 a 及7 3 b而互相移開’如第8圖之箭頭N所示。 如第9圖中所示，該等夾取器72之每一者係構成具有” 〔”形。該等夾取器72係裝配至其各自的夾臂7丨a及7 1 b， 使得當該等夾臂與其各自的制動器74a及74b接觸時，將 該晶圓之邊緣區域限制在該c形夾取器中。値得注意者， 如第4圖中所示，當該晶圓翻轉裝置5〇夾取該第二裝卸站 15b中之晶圓及當該晶圓翻轉裝置5〇將該晶圓釋出至該第 二裝卸站15c上時，該裝卸站15之該升降器2〇〇係被升至 該晶圓轉送位置。 再參照第7及8圖，該樞軸機構7〇藉由將該支撐結構65 裝於該軸72附近而利用該夾取器72翻轉所限制之該晶 -28- 200922746 圓。該軸72係分別垂直於該第二及第三裝卸站15b及15c 之中央16b及16c所界定之直線。該軸72也被構成與位在 該第二及第三裝卸站1 5b及1 5c上之晶圓並列。 該樞軸機構70更可構成將該支撐結構65裝於該軸75附 近，其中該軸係分別與由該第二及第三裝卸站15b及15c 之中央1 6 b及1 6 c所界定之該直線平行，使得該夾取配件 60a及6 0b自該第二及第三裝卸站15b及15c移開，如第1〇 圖中所示。第10圖爲當該夾取配件60a及60b以該軸75 爲中心自該第二裝卸站1 5b轉開時，該第二及第三裝卸站 15b及15c與該晶圓翻轉裝置55之俯視圖。 參照第1 1圖，其說明依據本發明之實施例之硏磨站 20B。第1 1圖爲該硏磨站20B之俯視圖。除了該硏磨站20B 更包含二個清洗站1 8及1 8 ’外，該硏磨站2 0 B係類似於該 硏磨站20及20A。雖然該硏磨站20B係顯示於第11圖中 而包含該晶圓翻轉裝置50及50’，但該硏磨站20B可僅包 含類似於該硏磨站20之該晶圓翻轉裝置50。該硏磨站20B 可被用在該硏磨裝置10中以取代該硏磨站20。 裝設該清洗站18位於該第二硏磨台256b及該第四裝卸 站15d之間，使得該第二硏磨單元25 0b之晶圓載體262b 可被配置在該清洗站18上方。裝設該第二清洗站18，於該 第—硏磨台256b及該第四裝卸站i5d’之間，使得該第二硏 磨單元250b之晶圓載體262b’可被配置在該清洗站18，上 方。 -29- 200922746 參照第1 2圖’說明依據本發明之實施例之清洗站1 8。第 1 2圖爲該清洗站1 8之俯視圖。除了該清洗站沒有包含該升 降器200、該升降活塞202、該升降氣缸204、該晶圓盤211 及該裝卸站1 5之第一流體通道270以外，該清洗站1 8係 類似於該裝卸站15。在該晶圓載體262b轉送一晶圓至該第 四裝卸站15d後’當該晶圓載體262b位在該清洗站18上 方時’該清洗站18係用以清洗該第二硏磨單元250b之該 晶圓載體262b。爲了清洗該晶圓載體262b，於該晶圓載體 2 6 2b上噴灑D.I.水。該清洗站18’係類似於該清洗站18。 在該晶圓載體262b’轉送一晶圓至該第四裝卸站i5d，後，當 該晶圓載體262b’位在該清洗站18’上方時，該清洗站18, 係用以清洗該第二硏磨單元250b之該晶圓載體262b，。 在該硏磨站20B之另一實施例中，裝設該第一清洗站} 8 於該第二硏磨台256b與該第三裝卸站〖5c之間，使得該第 二硏磨單元250b之該晶圓載體262b可被配置在該清洗站 18上方。裝設該第一清洗站丨8，於該第二硏磨台256b與該 第三裝卸站1 5 c，之間，使得該該第二硏磨單元2 5 Ob之該晶 圓載體262b’可被配置在該清洗站18,上方。 在該硏磨站20B之再另一實施例中，裝設該第一清洗站 1 8於該第一硏磨台2 5 6 a與該第二裝卸站1 5 b之間，使得該 第一硏磨單元250a之該晶圓載體262a可被配置在該清洗 站18上方。裝設該第二清洗站i8,於該第一硏磨台2563與 該第二裝卸站1 5 b，之間’使得該第一硏磨單元2 5 〇 a之該晶 -30- 200922746 圓載體262a’可被配置在該清洗站18’上方。 在該硏磨站20B之再另一實施例中，裝設該第一清洗站 1 8於該第一硏磨台2 5 6 a與該第一裝卸站1 5 a之間，使得該 第一硏磨單元250a之該晶圓載體262a可被配置在該清洗 站18上方。裝設該第二清洗站18,於該第一硏磨台256a與 該第二裝卸站15a’之間，使得該第一硏磨單元25 0a之該晶 圓載體262a’可被配置在該清洗站18’上方。 參照第1 1圖，其說明依照本發明之實施例於具有該硏磨 站20B之硏磨裝置1 〇中處理半導體晶圓之方法。除了在將 該等晶圓轉送至該等裝卸站1 5 d及1 5 d ’後，分別於該清洗 站18及18’上清洗該晶圓載體262b及262b，外，該於具有 該硏磨站20B之硏磨裝置1 〇中處理半導體晶圓之方法係類 似於具有該硏磨站20或該硏磨站20A之硏磨裝置1〇中處 理晶圓之方法。在該清洗站1 8及1 8，設在其它位置之其它 實施例中’在該等晶圓被該等晶圓載體262a及262a，轉送 至該等裝卸站丨5 b及1 5 b，後’或者在該晶圓被該等晶圓載 體262b及262b，轉送至該等裝卸站15d及i5d，後，該晶圓 載體262a及262a，或2 62b及262b，分別於該清洗站18及18, 上清洗。 參照第1 3圖之處理流程圖，其說明依照本發明之實施例 用以硏磨半導體晶圓之方法。在區塊1302之步驟中，將一 半導體晶圓移至第一晶圓載具上之第一裝卸站、第一硏磨 口與第—裝卸站之間。此外’在區塊1 3 0 2之步驟中，該半 -31 - 200922746 導體晶圓之第一側係利用該第一晶圓載具而於該第—硏磨 台上被硏磨。在區塊1304之步驟中，該半導體晶圓係於一 弟一晶圓載具上之第三裝卸站、第二硏磨台與第四裝卸站 之間被移動。此外，在區塊1304之步驟中，該半導體晶圓 之弟一側係利用該第二晶圓載具而於該第二硏磨台上被硏 磨。在區塊1306之步驟中，使用一翻轉機械人晶圓處理裝 置將該半導體晶圓自該第二裝卸站轉送至該第三裝卸站。 此外，在區塊1 3 06之步驟中，當該半導體晶圓自該第二裝 卸站轉送至該第三裝卸站時，翻轉該半導體晶圓。 雖然已說明及圖示本發明特定具體實施例，但本發明並 不拘限於所說明及圖示之該特定形式或部分配置。本發明 之範疇係由所附隨之申請專利範圍及其均等範圍來界定。 【圖式簡單說明】 第1圖爲依據本發明之實施例之硏磨裝置俯視圖。 第2圖爲桌1圖之硏磨裝置之硏磨站之硏磨單元及裝卸 站之側視圖’其說明該硏磨單元之晶圓載具如何線性移動 以轉送半導體晶圓。 第3圖爲本發明之實施例之裝卸站（其可被用在第1圖之 硏磨裝置中）之俯視圖。 第4圖爲第3圖之裝卸站之剖面圖。 第5 (a)及5(b)係依序爲第3圖之裝卸站之剖面視圖，用 以顯示於晶圓載體上裝載一連串之半導體晶圓W。 第6圖爲依據本發明之另一實施例之硏磨站的俯視圖。 -32- 200922746 第7及8圖爲依據本發明之實施例之晶圓翻轉裝置之俯 視圖，其顯示一半導體晶圓係於第1圖之硏磨裝置的二裝 卸站間轉送’以便亦翻轉該半導體晶圓。 第9圖爲第7與8圖之晶圓翻轉裝置之剖面視圖。 第1 0圖爲依據本發明之另一實施例之晶圓翻轉裝置之 俯視圖。 第11圖爲依據本發明之再另一實施例之晶圓翻轉裝置 之俯視圖。 第1 2圖爲依據本發明之一實施例於第11圖之硏磨站之 清洗站之俯視圖。 第1 3圖爲依據本發明之一實施例之硏磨半導體晶圓之 方法的流程圖。 【主要元件符號說明】 10 硏 磨 裝 置 15 裝 卸 站 15a 、15a， 第 一 對 裝 卸 站 15b 、15b， 第 二 對 裝 卸 站 15c 、15c’ 第 二 對 裝 卸 站 15d 、15d’ 第 四 對 裝 卸 站 18 第 一 清 洗 站 18’ 第 二 清 洗 站 20 ' 20A、20B 硏 磨 站 22 晶 圓 搬 運 裝 置 -33- 200922746 50、 55 晶 圓 翻 轉 裝 置 5(Γ 第 二 晶 圓 翻 轉裝 置 5 1 機 械 手 臂 60a 第 一 夾 取 配 件 60b 第 二 夾 取 配 件 65 支 撐 結 構 70 樞 軸 機 構 71a 、71b 夾 臂 72 夾 取 器 73a 、73b 直 線 移 動 機 構 74a ' 74b 制 動 器 102 晶 圓 儲 存 站 105 輸 入 緩 衝 站 150 第 一 晶 圓 轉 送裝 置 155 ' 215 直 線 軌 道 160 第 二 晶 圓 運 送裝 置 161 分 隔 物 190 基 部 195 環 狀 壁 200 升 降 器 202 升 降 活 塞 204 升 降 氣 缸 210 第 二 晶 圓 運 送裝 置 -34- 200922746 2 11 220 220, 222 224 226 228 230 232 234 236 238 240 250 260 : 270 280 285 272 25 0a 250b 255 、 255a 、 255b 256 、 256a 、 256b 晶圓盤 第一晶圓清潔器 第二晶圓清潔器 晶圓接收站 第一清潔站 第二清潔站 乾燥站 輸出緩衝站 第一晶圓運送裝置 第二晶圓運送裝置 第三晶圓運送裝置 第四晶圓運送裝置 第一多重噴嘴 第二多重噴嘴 排放通道 第一流體通道 保持環 真空通道 第二流體通道 第一硏磨單元 第二硏磨單元 硏磨墊 硏磨台 -35- 200922746 260 晶 圓 載 具 260a 、260b 第 一 晶 圓 載 具 260a: ‘ ' 260b5 第 二 晶 圓 載 具 262、 262a ' 262a5 ' 晶 圓 載 體 262b ' 262b' 264 載 軸 266 轉 動 垂 直 屠區 動機構 W 晶 圓 1302 -1306 塊 -36-。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 TECHNICAL FIELD OF THE INVENTION The present invention relates generally to semiconductor processing apparatus, and more particularly to a honing apparatus and method for honing semiconductor wafers. [Prior Art] A wet cleaning method (which utilizes a fluid chemical) has been used to remove particles on both sides of a semiconductor wafer. However, the particles embedded in the semiconductor wafers cannot be easily removed by conventional wet cleaning methods. Chemical mechanical honing (CM P) techniques (which are used to planarize the surface of the semiconductor wafer) can be used to remove such particles. In general, a conventional C Μ P device includes a honing station provided with a honing pad and a wafer carrier supporting a semiconductor wafer, wherein the semiconductor wafer is pressed against the crystal by the honing pad Round and being pondered. The CMP apparatus also includes a wafer cleaner for cleaning and drying the honed wafers. However, the conventional CMP apparatus is designed to honing only the front side of the semiconductor wafers (the sides of the semiconductor elements formed on the wafers) so that the surface layers deposited on the front side of the wafers flattened. Therefore, if the conventional CMP device is used to remove particles on both sides of the semiconductor wafer, the wafers must be processed twice in the CMP device to honing the two sides of the wafer. In order to honing the front side of the wafers, the wafers are placed in the CMP apparatus and then honed to honing the front side of the wafers. The honed crystal 200922746 splicer is cleaned and dried in the crystal jjj before the wafers are removed from the CMP apparatus. In order to honing the back side of the wafers, the wafers removed from the wafer must be relocated in the CMP apparatus and then honed to the back side of the wafers. The honed wafers must be cleaned and dried in the wafer cleaner before the wafers are removed from the CMP apparatus. In view of this, there is a need for a honing apparatus and method for honing semiconductor wafers, which can honing both sides of the wafers. SUMMARY OF THE INVENTION A honing apparatus and method for honing semiconductor wafers allows a loading station and at least one flip robot wafer processing apparatus to process a circle so that the wafer can be honed on multiple honing stations. The flip wafer processing apparatus operates to flip the wafer such that the wafers are honed on a first honing station and the other side of the wafers are smashed on a second honing station mill. A honing apparatus according to an embodiment of the present invention includes first and second members, first, second, third, and fourth loading and unloading stations, and a flip wafer processing device. Each of the first and second honing units grinds one side of the semiconductor wafer. The first and second honing units comprise a honing station and a wafer carrier, wherein the wafer carrier holds a semiconductor wafer and moves the semiconductor wafer and the wafer carrier system It is further configured to move the semiconductor wafer to the side. Each of the first and second 'third and fourth loading and unloading stations CMP is honed, and then is again more effectively used on one side of the versatile robot, and then honing a single robot One of the components of the fixed grinding station is constructed to load one of the semiconductor wafers in a time period of 200922746. The first and second loading and unloading stations are installed such that the first honing unit is located between the first and second loading and unloading stations. The third and fourth loading stations are installed such that the second honing unit is positioned between the third and fourth loading stations. The flip robot wafer processing device is positioned between the second and third loading stations. The flip robot wafer processing apparatus is configured to transfer the semiconductor wafer from the second loading and unloading station to the third loading and unloading station. The flip robot wafer processing apparatus is further configured to flip the semiconductor wafer when the semiconductor wafer is transferred from the second loading station to the third loading station. A method of honing a semiconductor wafer according to an embodiment of the present invention includes moving a semiconductor wafer between a first loading station, a first honing station, and a second loading station on a first wafer carrier, including using The first wafer carrier hones the first side of the semiconductor wafer on the first honing station; the third loading station on the second wafer carrier, the second honing station, and the fourth loading station Moving the semiconductor wafer between: using the second wafer carrier to honing a second side of the semiconductor wafer on the second honing station; and transferring from the second loading station using a flip robot wafer processing device The semiconductor wafer to the third loading station includes flipping the semiconductor wafer when the semiconductor wafer is transferred from the second loading station to the third loading station. Other aspects and advantages of the present invention will be apparent from the description of the appended claims. [Embodiment] Referring to Figures 1 and 2, a 200922746 honing apparatus 10 according to an embodiment of the present invention will be described. FIG. 1 is a plan view of the honing device 10. Figure 2 is a side elevational view of the honing station 20 of the honing device 10. The honing device 10 includes the honing station 20, the wafer storage station 1 〇 2, the input buffer station 105, the first wafer transfer device 150, the first wafer transfer device 160, and the second wafer transfer device. 210, a first wafer cleaner 220 and a second wafer cleaner 220'. The honing station 20 is a structure surrounded by a window-like mechanism (not shown) that can be opened to transfer semiconductor wafers to and from the honing station 20 20 transfer. The honing station 20 includes a first honing unit 250a, a second honing unit 250b, first pair of loading and unloading stations 15a and 15a', second pair of loading and unloading stations 15b and 15b', and third pair of loading and unloading stations 15c and 1 5 c ', the fourth pair of loading and unloading stations 1 5 d and 1 5 d ', and a wafer turning device 50. In the following description, similar elements will sometimes be referred to herein using their common component symbols without suffixes. Each honing unit 250 of the honing station 20 includes a honing station 256, a first wafer carrier 260, and a second wafer carrier 260'. The honing station 256 can be used to honing two semiconductor wafers simultaneously. The honing station 256 can be rotated or operated about an axis. In some embodiments, a honing pad 255 can be attached to the honing station 25 6 during chemical and mechanical honing of the semiconductor wafer. One or more fine particles (such as caustic potash (KOH)) containing abrasive particles and/or chemicals can be used to honing the semiconductor wafer with the honing pad 25 5 . Each honing unit 250 can further include a pad adjuster (not shown) for adjusting the surface of the honing pad 25 5 during the honing process to update the surface of the honing pad to make it suitable. mill. 200922746 As shown in Figures 1 and 2, each of the wafer carriers 260 of the honing units 250a and 250b includes a wafer carrier 262, a carrier shaft 264, and a rotary vertical drive mechanism 266. The wafer carrier 262 is configured to hold a semiconductor wafer such that the wafer surface to be honed faces the honing pad 255. The wafer carrier 262 is coupled to the rotational vertical drive mechanism 266 through the carrier shaft 264. The rotary vertical drive mechanism 266 controls the rotation and vertical movement of the wafer carrier 262 through the coupled carrier shaft 264. Accordingly, the rotational vertical drive mechanism 266 is configured to rotate the wafer carrier 262' by rotating the coupled carrier shaft 264 and to vertically move the wafer carrier 262 by vertically moving the coupled carrier shaft 264. . In order to honing the semiconductor wafers, the wafer carriers 262 are moved downward or by the respective rotary vertical drive mechanisms 266 to be lower than the respective honing pads 25 5 by the wafer carriers 262 Hold to press the wafers onto the respective honing pads 255. The loading station 15 of the honing station 20 accommodates or transfers wafers to or from the loading station 丨5. Each of the loading and unloading stations 15 is configured to load a semiconductor wafer for a time. The loading and unloading station 15 is configured to receive or unload a wafer released from a wafer carrier 262 or another device (such as the second wafer transport device 160), and place or load a wafer on a wafer carrier or On another device. As shown in Fig. 1, the loading station 15 and the pair of honing units 25A and 205b are configured in the following manner: the first pair of loading stations 1 5 a and 1 5 a, the position In front of the first honing unit 250a (ie, closest to the second crystal-10-200922746 round transport device 160), the second pair of loading stations 15b and 15b' are in the first honing unit 250a Between the third pair of loading and unloading stations 15c and 15c', the second honing unit 25 0b is at the third pair of loading and unloading stations 15c and 15c' and the fourth pair of loading and unloading stations 1 5 d and 1 5 d ' And between the fifth pair of loading and unloading stations 15d and 15d' are located behind the second honing unit 2500b. Further, the loading and unloading stations 15a, 15b, 15c, and 15d are arranged in a straight line, and the loading and unloading stations 15a, '1, 5b', 1 5c' and 1 5d' are also arranged in a straight line. That is, the loading and unloading stations 15a, 15b, 15c, and 15d are aligned along a straight line, and the loading and unloading stations 15a', 15b', 15c', and 15d' are aligned along another line. The honing station 20 is constructed such that (1) the first wafer carrier 260a of the first honing unit 25a can be linearly disposed at the first and second loading stations! Moving between 5a and 15b, and the first wafer carrier 206b of the second honing unit 250b can move between the third and fourth loading stations 15c and 15d in a straight line manner, and (2) the first The second wafer carrier 260a of the honing unit 250a can move between the first and second loading and unloading stations 15a, 15b in a straight line, and the second wafer carrier 260b' of the second honing unit 250b can The linear mode moves between the fifth and fourth loading and unloading stations 1 5 c ' and 1 5 d. The honing station 20 can also be configured such that (1) the first wafer carrier 260a of the first honing unit 250a can also move linearly between the first, second and third loading stations 15a, 15b and 15c. 'and the first wafer carrier 260b of the second honing unit 250b can move linearly between the second, third and fourth loading stations 15b, 15c and 15d, and (2) the first honing unit The second wafer carrier 260a' of 250a can be moved linearly between the first, second and 200922746 third loading stations 15a', 15b' and 15c' and the second wafer of the second honing unit 250b The 260b' can also be moved between the second, third and fourth loading and unloading stations 15b', 15c' and 15d' in a straight line. As shown in FIG. 2, in order to linearly move the wafer carrier 260 between the loading and unloading stations 15 , the wafer carriers 260 are coupled to at least one wafer handling device capable of linearly moving the wafer carriers. twenty two. An example of a wafer handling device 22 that can be used to move the wafer carriers 260 in a straight line is disclosed in U.S. Patent No. 7,223,153, the disclosure of which is incorporated herein by reference. Referring to Figures 3 through 5, one of the loading stations 15 of the honing station 20 is further described. Fig. 3 is a plan view of the loading and unloading station 15, and Fig. 4 is a cross-sectional view of the loading and unloading station taken along line QQ in Fig. 3. The loading and unloading station 15 includes a base 190, an annular wall 195, a lifter 200, a wafer pad 211, a first multi-nozzle 240, a second multiple nozzle 25 0, a discharge passage 260, a first fluid passage 270, and a second Fluid channel 272. The fluid passages 270 and 272 can be connected to a fluid source (not shown). The discharge passage 26A can be connected to a drain pump (not shown). The annular wall 195 is attached to the base of the wafer tray 2 1 1 . The crystal disk 211 includes a hole ' at its center so that the lifter 2 can be disposed at the center of the base 190. As shown in Fig. 4, the lifter 200 is coupled to the lift cylinder 204 via a lift piston 202. The lifter 200 is a wafer holding device 'for use from a wafer carrier (also known as a honing head) (such as 'the wafer carriers 262a, 262a, 262b and 262b), or from a crystal The circular carrier lifts and lowers the wafer. The lift cylinder 2〇4 is coupled to the first fluid passage 270 by -12-200922746 and is operated by supplying a fluid through the first fluid passage 270. The lifter 200 is moved up and down by the lift cylinder 204. As shown in FIG. 4, the lifter 200 is raised on the upper surface of the annular wall 195 to a wafer transport position from a wafer transport device (such as the second wafer transport device 160). A semiconductor wafer W is received from a wafer carrier (such as one of the wafer carriers 262a, 262a', 262b, and 262b') or from a wafer flip device (such as the wafer flip device 50). After the lifter 200 receives the wafer W, the lifter is moved down below the wafer tray 21 to place the wafer W on the wafer tray 2 1 1 . In this way, the wafer W is unloaded on the loading station 15. As shown in FIG. 4, in order to transfer the wafer W from the elevator 200 to a wafer transport device (such as the third wafer transport device 2 10), a wafer carrier (such as 'the crystal a circular carrier 262a, 262a, 262b, and 262b, or a wafer flipping device (such as the wafer inverting device 50), the lifter 200 is raised to a wafer on the upper surface of the annular wall 195 Shipping location. As shown in Fig. 4, the first multi-nozzle 24 is mounted on the top of the base 190 and the second multi-nozzle 250 is mounted on the inner side of the annular wall 195. The first and second nozzles 24 and 25 are coupled to the second fluid passage 272 and are used to spray a fluid such as deionized (DI) water (which is supplied through the second fluid passage 272). The fluid used, such as the D used. I. The water system is discharged through the discharge passage -13 - 200922746 passage 260 by the discharge pump (not shown). When one or both of the first and second nozzles 24A and 250 are positioned on the loading and unloading station 15, the loading station 15 is allowed to clean a wafer and/or a wafer carrier. Referring to Figures 5(a) and 5(b), it is illustrated that the loading and unloading station 15 of Figures 3 and 4 carries a semiconductor wafer w to a wafer which can be one of the wafer carriers 262a to 262b. The processing sequence on the carrier 2 6 2 . Figures 5 (a) and 5 (b) are a continuous cross-sectional view of the loading station 15 . As shown in FIG. 5(a), after the wafer W is placed on the wafer tray 21 of the loading and unloading station 15, the wafer carrier 262 is disposed at the loading and unloading station 15 with reference to the fourth drawing. . As described in Figure 5(a), the wafer carrier 262 can include a retaining ring 280 to limit the wafer W during the honing process. Next, as shown in the fifth (b), the lifter 200 is moved upward and the wafer w on the lifter is received by the wafer carrier 262 using the vacuum supplied by the vacuum channel 285. After the wafer W is received by the wafer carrier 262, the lifter 200 is moved downward. In order to unload the wafer W from the wafer carrier 262, the vacuum supplied by the vacuum channel 285 is removed, and the wafer W is released from the wafer carrier 262 to the elevator 200 of the loading station 15. Then, the loading and unloading station 15 can be sprayed by D. 1. The wafer carrier 262 is cleaned on the wafer carrier 262. Referring back to Figures 1 and 2, the wafer reversing device 50 is disposed between the second pair of loading and unloading stations 15b and 15b and the third pair of loading and unloading stations 15c and 15c'. The wafer inverting device 50 is a robotic wafer processing device configured to transfer wafers from the second pair of loading and unloading stations 15b and 15b to the third pair of loading and unloading stations 15c and 15C. The robot arm 51 of the turning device 50 can extend to the second pair of -14-200922746 loading and unloading stations 15b and 15b' to pick up the wafers from the second pair of loading stations i5b and 15b. The robot arm 51 of the inverting device 50 is further configured to pick up the wafers from the second pair of loading and unloading stations 15b and 15b' to flip the wafers so that they can be flipped after the wafers are flipped The wafers are transferred to the third pair of loading stations 15c and 15c'. Here, flipping a semiconductor wafer means rotating the wafer by 180 degrees to reverse the major side or surface of the wafer. For example, if the front side of the wafer is initially oriented downward, the front side of the wafer will face upward after flipping the wafer. The wafer cleaners 220 and 220' are structures surrounded by a window-like mechanism (not shown) that can be turned on to transfer semiconductor wafers to or from the wafer cleaners. Transfer it out. The first wafer cleaner 220 includes a wafer receiving station 222, a first cleaning station 224, a second cleaning station 226, a drying station 228, an output buffer station 230, and a first wafer transport device 23 2 A second wafer transport device 234, a third wafer transport device 236, and a fourth wafer transport device 238. The wafer cleaner 220 is configured to clean and dry both the front side and the back side of the wafers. The second wafer cleaner 220' can be identical to the first wafer cleaner 220. The wafer cleaners 220 and 220' are disposed such that the wafer receiving stations 222 of the wafer cleaners are adjacent to the third wafer transporting device 210, and the output buffering stations of the wafer cleaners. Adjacent to the first wafer transport device 150. The wafer receiving station 222 houses the semiconductor wafer transferred by the third wafer transport device 210. The first wafer transport device 23 2 transfers wafers from the wafer receiving station 222 to the first cleaning station 224. The second wafer transport device 200922746 234 transfers wafers from the first cleaning station 224 to the second cleaning station 226. The third wafer transport device 236 transfers wafers from the second cleaning station 226 to the drying station 2 28 . The fourth wafer transport device 238 transfers the wafer from the drying station 2 28 to the output buffer station 230. The wafers are removed from the output buffer station 203 by the first wafer transport device 150 and then transferred to the wafer storage station 102. The first and second cleaning stations 224 and 226 of the wafer cleaner 220 utilize D. I. Water and/or chemicals such as ammonium hydroxide (NH4〇H), diluted hydrofluoric acid (HF), and organic chemicals remove fine mud particles from the surface of the wafer. The wafer receiving station 22 2 can also be configured to utilize D. I. Water and/or chemicals (such as NH4〇H, diluted HF, and organic chemicals) remove fine mud particles from the surface of the wafer. After the cleaning process is completed by the second cleaning station 226, D is used. I. The wafer is rinsed with water and then dried in the drying station 2 2 8 . The wafer storage station 102 houses semiconductor wafers or other objects that are comparable to be honed by the honing station 20. The wafer storage station 1 〇 2 can also accommodate semiconductor wafers or other objects that have been honed and cleaned by the honing station 20 and the wafer cleaners 220 and 220'. As shown in FIG. 1, the first wafer transport device 15 is disposed between the wafer storage station 102 and the input buffer station 105, and the wafer storage station 102 and the wafer cleaners 220 and 220 are disposed. Between the robots of the first wafer transport device 150, the wafer can be transferred from the wafer storage station 1 to the input buffer station 105' and the output buffers from the wafer cleaners 220 and 220. Station 230 transfers to the wafer storage station 1〇2. -16 - 200922746 The input buffer station 105 is disposed between the first and second wafer transport devices 150 and 160. The input buffer station 105 houses a wafer to be honed by the honing station 20. As shown in FIG. 1, the second wafer transport device 160 is disposed between the input_rush station 105 and the first pair of loading and unloading stations 15a and 15& of the honing station 20 to make the first The robotic arm of the wafer transport device 160 can transfer wafers from the input buffer station 105 to the first pair of loading stations 15a and 15a' of the honing station 20. Since the robot of the second wafer transport device 160 is contaminated when entering the honing station 20, the second wafer transport device 160 can preferably be separated by a separator 161. The first wafer transport device 150 is spaced apart, as shown in FIG. 1, to prevent the second wafer transport device 16 from being contaminated by the first wafer transport device 150. In order to maintain the cleaning of the first wafer transport device 15', an air cleaner unit (not shown) may be disposed above the first wafer transport device 150. As shown in FIG. 1 'the fourth wafer transport device 210 is installed at the fourth pair of loading stations 丨 5 d and 15 d of the honing station 20 , and the respective wafer cleaners 2 2 0 and 2 Between the wafer receiving stations 2 2 2 of 2 0 ', the robot arm of the third wafer transporting device B 210 can transfer wafers to the wafer receiving station 222 from the fourth pair of loading and unloading stations 15cl and 15d. The first and third wafer transport devices 150 and 21 can be mounted on the respective linear tracks 155 and 215 such that the wafer transport devices can be mounted on the linear track by respective linear and linear device mechanisms (not shown). Moving the I° in a straight line, and transferring the wafers to the input buffer station 1 〇5, the honing station-17-200922746 20, and the wafer cleaners 220 and 220, respectively, may constitute the first The robot arms of the first, second and third wafer transport devices 15〇, 16〇 and 21〇 are used to flip the wafers. A method of processing a semiconductor wafer in the honing apparatus 10 in accordance with an embodiment of the present invention will now be described with reference to Figures 1 and 2. First, the first wafer transport device 15 transfers the semiconductor wafer from the storage station 102 to the input buffer station 1〇5. Then, the second wafer transport device 16 transfers the wafers from the input buffer station 105 to the first pair of loading and unloading stations i5a and 15a, so that the wafers and the electrical circuits are not formed on the rear side of the wafers. To the first loading and unloading station 1 5 a and 1 5 a '. That is, the rear side of the wafers faces downward toward the first loading and unloading station 15a and 15a'. Then, the wafer carriers 262a and 262a'(1) of the first honing unit 250a are linearly moved to the first pair of loading and unloading stations 15a and 15a', respectively, (2) from the first loading and unloading stations 15a and 15a' The wafers are received, and then (3) moved to the honing station 25 6a of the first honing unit 25 0a. Next, the wafer carriers 262a and 262a' are moved down to the honing pad 255a of the honing station 256a and then the wafers are honed with a first slurry. Therefore, the back side of the wafers is honed on the honing pad 25 5a. Then, after the wafers are honed on the honing pad 255a, the wafer carriers 262a and 262a' are moved upward from the honing pad 255a. Then, the wafer carriers 262a and 262a'(1) of the first honing unit 250a are linearly moved to the second pair of loading and unloading stations 1 5 b and 1 5 b '' (2) to wafers -18 - 200922746 Transfer to the second loading and unloading stations 15b and 15b'' such that the rear sides of the wafers are returned to the first loading and unloading stations 15b and 15b'' and the receiver (3) to the first loading and unloading station 15a and 15 a '. Next, the robot arm (1) of the wafer reversing device 50 approaches the second loading station 15b' (2) picks up the wafer from the second loading station 15b, and (3) flips the wafer so that the wafer is behind Facing upward, (4) transferring the wafer to the third loading station 15c' so that the front side of the wafer without the transistor and the electrical circuit is formed toward the third loading station 15c, (5) is close to the The second loading and unloading station i5b, (6) picks up the wafer from the second loading station 15b' (7) flips the wafer so that the rear side of the wafer faces upward, and (8) transfers the wafer to The third loading and unloading station 15c' removes the front side of the wafer from which the transistor and the electrical circuit are not formed to the third loading and unloading station 15c', and (9) from the third loading and unloading station 15c. Then, the wafer carriers 26 2b and 262b, (1) of the second honing sheet 25 Ob are linearly moved to the third loading and unloading stations 15c and 15c'' (2) from the third loading and unloading stations 15c and 15c, respectively. 'Receive the wafers, and then (3) move to the honing station 256b of the second honing unit 250b. Then, the wafer carriers 262b and 262b' are moved down to the honing pad 255b of the honing station 25 6b and then the wafer is honed with a second slurry, wherein the second mud composition is not used The first mud. Alternatively, the first sludge used on the honing station 25 6a can be used in the honing station 25 6b to replace the second slurry. Therefore, the front side of the wafers is honed on the honing pad 2 5 5 b. Then, the wafers are honed on the honing pad 255b, and the wafer carriers -19-200922746 bodies 262b and 262b' are moved upward from the honing pad 255b. Then, the wafer carriers 262b and 262b, (1) of the second honing unit 250b are linearly moved to the fourth loading and unloading stations 15d and 15d', respectively, and (2) the wafers are transferred to the fourth loading and unloading station 1 5d and 15d', the front side of the wafers are returned to the fourth loading and unloading stations 15d and 15d', and then (3) to the third loading and unloading stations 15c and 15c'. Next, the third wafer transport device 210 removes the wafers from the fourth loading and unloading stations I5d and 15d' and then transfers the wafers to the wafer cleaners 220 and 220' respectively. Round receiving station 222. The third wafer transport device 210 can flip the wafers before transferring the wafers to the wafer receiving station 222. The wafers are then cleaned and dried in the wafer cleaners 220 and 220'. Then, after the wafer has been processed in the wafer cleaners 220 and 220, the first wafer transport device 150 outputs the buffer station 2300 from the wafer cleaners 220 and 220. Wait for the wafer to be removed. Then, the first wafer transfer device 150 transfers the wafers to the storage station 102. In this embodiment, the back side of the wafers has been first honed in the first honing unit 250a and then the front side of the wafers has been honed in the second honing unit 250b. In another embodiment, the front side of the wafers may be honed in the first honing unit 250a and then the back side of the wafers may be honed in the second honing unit 205b. In another embodiment, the wafers are transferred to the first -20-200922746 unloading station 1 5 a and 1 5 a ' by the second wafer transport device 160 to make the wafers The front side is transferred to the first loading and unloading stations 15a and 15a'' and from the second loading and unloading stations 15b and 15b' to the third loading and unloading stations i5c and i5c by the wafer turning device, so that the wafers are rear side To the third loading and unloading station 1 5 c and 丨 5 C,. Referring to Figures 1 and 2, there is illustrated another method of processing a semiconductor wafer in a honing device 10 in accordance with another embodiment of the present invention. First, the first wafer transfer device 15 transfers the semiconductor wafer from the storage station 102 to the input buffer station ι5. Then the second wafer transport device 16 transfers the wafers from the input buffer station 105 to the first pair of loading stations i5a and 15a such that the first side (front side or rear side) of the wafers Facing the first loading and unloading station 1 5 a and 丨 5 a,. Then, the wafer carriers 262a and 262a, (1) of the first honing unit 250a are linearly moved from the initial position on the honing station 2 5 6 a to the first pair of loading stations 1 5 a and 1 respectively. 5 a,, (2) from the first loading and unloading station 1 5 a and 1 5 a, receiving the wafers 'and then (3) returning to the honing station 25 6 a ° of the first honing unit 250 a The wafer carriers 262a and 262a are moved down to the honing pad 25 5a of the honing station 256a and then the wafers are honed with a first slurry. Therefore, the first side of the wafers is honed on the honing pad 25 5 a. Then, after the wafers are honed on the honing pad 255a, the wafer carriers 262a and 262a' are moved upward from the honing pad 255a. Then, the wafer carriers 262a and 262a, (1) of the first honing unit 250a are linearly moved to the third pair of loading and unloading stations 15c and 15c, respectively, and (2) the wafers - 21, 200922746 are transferred to the wafer The third pair of loading and unloading stations 1 5 c and 1 5 c ', so that the side faces the third pair of loading and unloading stations 1 5 c and 1 5 c ''. The first loading and unloading station is 1 5 a and 1 5 a '. Then, the wafers I of the second honing sheet 250b are transferred from the initial position on the honing station 256b to the loading and unloading stations 15c and 15c, (2) from the wafers of the third loading station, and the like. Then (3) returning to the second honing sheet 3 256b °, then the wafer carriers 262b and 262b' are downwardly facing the honing pad 255b and then using the second slime in the second slime The first sludge used on the first lean station 25 6 a can be used to replace the second sludge. Therefore, the first of these wafers is again honed. Then, the wafers are wound up from the honing pad 25 5b by the rams 262b and 262b' on the honing pad 255b, and the wafer carriers of the second honing unit 250b are linearly moved to the fourth The loading and unloading stations are sent to the fourth loading and unloading stations 15d and I5d for 15d and 15d, so that the fourth loading and unloading stations 15d and 15d, and then the unloading stations 15c and 15c'. Then, the third wafer transport device 210 removes the unloading station 15d and 15d, and then returns the first and subsequent (3) of the wafers to the I body 262b and 262b'(l) does not move straight to the third 15c and 15c' to receive the crucible; the honing station of 250b moves to the honing station 256b to honed the wafers, the mud. Alternatively, after the 硏 硏 硏 256 256b is ground to the honing pad 25 5b, the wafers are loaded. The bodies 262b and 262b'(l), (2) returning the first side (3) of the wafer to the wafer, and transferring the third wafer to the wafer from the fourth package to the wafer clearing- 22- 200922746 These wafer receiving stations 222 of the cleaners 220 and 220'. The third wafer transport device 210 can flip the wafers before transferring the wafers to the wafer receiving station 222. Then, after the wafer has been processed in the wafer cleaners 220 and 220', the first wafer transport device 150 outputs the buffers from the wafer cleaners 220 and 220. Move out. Next, the first wafer transport device 150 transfers the wafers to the storage station 102. Referring to Figures 1 and 2, there is illustrated another method of processing a semiconductor wafer in a honing device 10 in accordance with another embodiment of the present invention. First, the first wafer transport device 150 transfers wafers from the storage station 1〇2 to the input buffer station 1〇5. Next, the second wafer transport device 160 transfers the wafers from the input buffer station 105 to the first pair of loading stations i5a and i5a' such that the first side of the wafers (ie, the side or the back side) ) facing the first loading and unloading stations l5a and l5a. The wafer carriers 262a and 262a of the honing unit 250a, (1) are linearly moved from the initial positions on the honing station 2 5 6 a to the first # loading and unloading stations 15a and 15a, respectively. , (2) receiving the wafer ' from the first loading and unloading stations 15a and 15a, and then returning to the honing station 2 5 6a of the first honing unit 25 0a. The wafers 262a and 262a are moved downwardly to the honing crucible 25 5 a of the honing station 256a and then the wafers are honed using the first slurry. Therefore, the first side of the wafers is honed on the honing pad 255a. -23- 200922746 Next, after the wafers are honed on the honing pad 255a, the wafer carriers 262a and 262a' are moved upward from the honing pad 255a. Then, the wafer carriers 262a and 262a'(1) of the first honing unit 250a are linearly moved to the second pair of loading and unloading stations 15b and 15b', respectively, and (2) the wafers are transferred to the second pair of loading and unloading Stations 1 5b and 15b' are such that the first side of the wafers are returned to the second pair of loading and unloading stations 15b and 15b', and then (3) to the first loading and unloading stations 15a and 15a'. Then, the wafer carriers 262b and 262b'(1) of the second honing unit 25 0b are linearly moved from the initial positions on the honing table 25 6b to the second pair of loading and unloading stations 15b and 15b, respectively. ', (2) receiving the wafers from the second pair of loading and unloading stations 15b and 15b', and then (3) returning to the honing station 256b of the second honing unit 250b. Then, the wafer carriers 26 2b and 26 2b' are moved down to the honing pad 25 5b of the honing station 256b and then the wafers are honed by a second slurry, wherein the composition of the second mud It is not used for this first sludge. Alternatively, the first slurry used on the honing station 256a can be used in the honing station 256b to replace the second slurry. Therefore, the first side of the wafers is honed on the honing pad 25 5 b. Then, after the wafers are honed on the honing pad 25 5b, the wafer carriers 262b and 262b' are moved upward from the honing pad 25 5b. Then, the wafer carriers 262b and 262b'(1) of the second honing unit 250b are linearly moved to the fourth loading and unloading stations 15d and 15d', respectively, and (2) the wafers are transferred to the fourth loading station 1 5d and 15d', the first side of the wafers -24 - 200922746 is returned to the fourth loading and unloading stations 15d and 15d, 'and then (3) to the second loading and unloading stations 15b and 15b. Then the third wafer transport device 210 removes the wafers from the fourth loading and unloading stations 15d and I5d', and then transfers the wafers to the wafer cleaners 220 and 220' of the wafers. Receiving station 222. The third wafer transport device 210 can flip the wafers before transferring the wafers to the wafer receiving station 222. Then, after the wafer has been processed in the wafer cleaners 220 and 220', the first wafer transfer device 150 is output from the wafer cleaners 220 and 220, and the output buffer station 2300. The wafer is removed. The first wafer transport device 150 then transfers the wafers to the storage station 102. Referring to Figure 6, a honing station 20A in accordance with an embodiment of the present invention is illustrated. Figure 6 is a plan view of the honing station 20A. The honing station 20A is similar to the honing station 20 of Fig. 1 except that the honing station 20A includes two wafer turning devices 50 and 50' and the honing station 20 includes only one wafer turning device 50. The honing station 20A can be used in the honing device 10 instead of the honing station 20 °. The first wafer turning device 50 equipped with the honing station 20A is located at the second loading station 1 5 b and the first Three loading and unloading stations are between 1 5 c. The first wafer inverting device 50 transfers the wafer from the second loading station 15b to the third loading station 15c. In operation, the robot arm of the first wafer turning device 50 approaches the second loading station 15b to pick up the wafer from the second loading station 15b. After picking up the wafer from the loading station 15b of the -25th - 200922746, the robot of the first wafer reversing device 50 flips the wafer so that the wafer is transferred to the third loading station after the flipping. . A second wafer inverting device 50 for mounting the honing station 20A is located between the second loading station 15b' and the third loading station 15c'. The second wafer inverting device 50' transfers the wafer from the second loading station 15b to the third loading station 15c'. In operation, the turning device 50, the robot arm approaches the second loading station 15b'' to pick up the wafer from the second loading station 丨5b. After picking up the wafer from the second loading station 15b, the wafer flipping device 50, the robot arm flips the wafer so that the wafer is transferred to the third loading station 15c after being inverted. A method of processing a semiconductor wafer in a honing device 10 having the honing station 20A in accordance with an embodiment of the present invention will now be described with reference to FIG. The wafers are flipped and transferred from the second loading station 15b to the third loading station 15c by the first wafer turning device 50, and the wafers are used in the honing station 20A. The second wafer inverting device 5' is reversible and transferred from the second loading station 15b to the third loading station 15c', which is processed in the honing device 10 having the honing station 20A The wafer method is similar to the method of processing wafers in the honing device 10 having the honing station 20. In contrast, the wafers are flipped and transferred from the second loading and unloading station 1 5 b and 15 b ' to the third loading station 1 by the wafer turning device 5 in the honing station 20 5 c and 丨 5 c,. The wafer inverting device 55 of the embodiment of the present invention will be described with reference to Figs. 7-9. Figure 7 is a plan view of the wafer reversing device 55 when the wafer reversing device 55 is positioned above the second loading station 15b-26-200922746 for picking up a semiconductor wafer W from the second loading station 15b. In Fig. 7, the wafer W is laterally directed downward toward the second loading station 15b. Figure 8 is a plan view of the wafer turning device 55 when the turning device 55 is positioned above the third loading station 丨5c for releasing the wafer to the third loading station 15c. In Fig. 8, the front side of the wafer W is directed downward toward the third loading station i5c. Figure 9 is a longitudinal cross-sectional view of the wafer turning device 5 5 along line XX in Figure 7. The wafer turning device 55 can replace the wafer turning device 50 in the honing station 20 or can replace each of the wafer turning devices 50 and 50' in the honing station 20A. The wafer inverting device 55 includes a first gripping fitting 60a, a second gripping fitting 60b, a support structure 65, and a pivot mechanism 70. As shown in Fig. 7, the support structure 65 is coupled to the pivot mechanism 70 such that the pivot mechanism 70 mounts the support structure 65 adjacent the pivot 72. The first gripping fitting 60a includes a grip arm 71a, a gripper 72, a linear movement mechanism 73a, and a stopper 74a. The linear movement mechanism 73a is attached to the support structure 65. The clamping arm 71a movably operates the supporting structure 65 coupled to the opening of the clamping arm 71a such that the clamping arm 71a can linearly move along the supporting structure 65 by the linear moving mechanism 73a, wherein the clamping arm 71a The linear movement mechanism 7 3 a is coupled to the clamp arm 7 1 a. The brake 74a is fitted to the support structure 65 such that when the clamp arm 7 1 a comes into contact with the brake 74a, the linear motion of the clamp arm 7 1 a along the support structure 65 is stopped. The second gripping fitting 60b includes a clamp arm 71b, a gripper 72, a linear shift -27-200922746 moving mechanism 73b, and a brake 74b. The linear movement mechanism 73b is attached to the support structure 65. The clamping arm 7 1 b movably operates the supporting structure 65 coupled to the opening of the clamping arm 7 1 b such that the clamping arm 7 1 b can be linear along the supporting structure 65 by the linear moving mechanism 73b Movement, wherein the linear movement mechanism 73b is coupled to the clamp arm 71b. The brake 74b is attached to the support structure 65 such that when the clamp arm 71b comes into contact with the brake 74b, the linear motion of the clamp arm 7 1 b along the support structure 65 is stopped. In order to grip the wafer on the second loading and unloading station 15b, the clamping arms 71a and 71b are moved closer to each other by their respective linear moving mechanisms 73a and 73b until the clamping arms are in contact with their respective brakes 74a and 74b. , as shown by the arrow 第 in Figure 7. In order to release the wafer to the third loading station i5c, the clamping arms 7 1 a and 7 1 b are moved away from each other by their respective linear moving mechanisms 7 3 a and 7 3 b 'as in the eighth The arrow N of the figure is shown. As shown in Fig. 9, each of the grippers 72 is constructed to have a "[" shape. The grippers 72 are assembled to their respective clamp arms 7A and 7 1b such that when the clamp arms are in contact with their respective brakes 74a and 74b, the edge regions of the wafer are constrained to the c-shape In the gripper. Note that, as shown in FIG. 4, when the wafer inverting device 5 picks up the wafer in the second loading and unloading station 15b and releases the wafer to the wafer flipping device 5 When the second loading and unloading station 15c is on, the lifter 2 of the loading and unloading station 15 is raised to the wafer transfer position. Referring again to Figures 7 and 8, the pivot mechanism 7 is flipped over the bound -28-200922746 circle by the gripper 72 by attaching the support structure 65 to the vicinity of the shaft 72. The shaft 72 is perpendicular to a line defined by the centers 16b and 16c of the second and third loading and unloading stations 15b and 15c, respectively. The shaft 72 is also formed in parallel with the wafers positioned on the second and third loading and unloading stations 15b and 15c. The pivot mechanism 70 is further configured to mount the support structure 65 adjacent to the shaft 75, wherein the shaft system is defined by the centers 16b and 16c of the second and third loading and unloading stations 15b and 15c, respectively. The lines are parallel such that the gripping fittings 60a and 60b are removed from the second and third loading and unloading stations 15b and 15c as shown in Fig. 1. Figure 10 is a plan view of the second and third loading and unloading stations 15b and 15c and the wafer reversing device 55 when the gripping fittings 60a and 60b are rotated away from the second loading and unloading station 15b centering on the shaft 75. . Referring to Figure 11, there is illustrated a honing station 20B in accordance with an embodiment of the present invention. Fig. 1 is a plan view of the honing station 20B. The honing station 20B is similar to the honing stations 20 and 20A except that the honing station 20B further comprises two washing stations 18 and 18'. Although the honing station 20B is shown in Fig. 11 and includes the wafer turning devices 50 and 50', the honing station 20B may only include the wafer turning device 50 similar to the honing station 20. The honing station 20B can be used in the honing device 10 in place of the honing station 20. The cleaning station 18 is disposed between the second honing station 256b and the fourth loading station 15d such that the wafer carrier 262b of the second honing unit 205b can be disposed above the cleaning station 18. The second cleaning station 18 is disposed between the first honing station 256b and the fourth loading station i5d', so that the wafer carrier 262b' of the second honing unit 250b can be disposed at the cleaning station 18. , above. -29- 200922746 A cleaning station 18 in accordance with an embodiment of the present invention is illustrated with reference to Figure 1 2'. Figure 12 is a plan view of the cleaning station 18. The cleaning station 18 is similar to the loading and unloading except that the cleaning station does not include the elevator 200, the lifting piston 202, the lifting cylinder 204, the wafer tray 211, and the first fluid passage 270 of the loading and unloading station 15. Station 15. After the wafer carrier 262b transfers a wafer to the fourth loading station 15d, 'when the wafer carrier 262b is positioned above the cleaning station 18, the cleaning station 18 is used to clean the second honing unit 250b. The wafer carrier 262b. In order to clean the wafer carrier 262b, spray D. on the wafer carrier 2 6 2b. I. water. The cleaning station 18' is similar to the cleaning station 18. After the wafer carrier 262b' transfers a wafer to the fourth loading station i5d, the cleaning station 18 is used to clean the second when the wafer carrier 262b' is positioned above the cleaning station 18'. The wafer carrier 262b of the honing unit 250b. In another embodiment of the honing station 20B, the first cleaning station is disposed between the second honing station 256b and the third loading station 〖5c, such that the second honing unit 250b The wafer carrier 262b can be disposed above the cleaning station 18. The first cleaning station 丨8 is disposed between the second honing station 256b and the third loading station 15c, so that the wafer carrier 262b' of the second honing unit 25 Ob It is disposed above the cleaning station 18. In still another embodiment of the honing station 20B, the first cleaning station 18 is disposed between the first honing station 2 5 6 a and the second loading station 15 b such that the first The wafer carrier 262a of the honing unit 250a can be disposed above the cleaning station 18. The second cleaning station i8 is disposed between the first honing station 2563 and the second loading station 15b, such that the first honing unit 2 5 〇a of the crystal -30-200922746 circular carrier 262a' can be configured above the cleaning station 18'. In still another embodiment of the honing station 20B, the first cleaning station 18 is disposed between the first honing station 256a and the first loading station 15a, such that the first The wafer carrier 262a of the honing unit 250a can be disposed above the cleaning station 18. The second cleaning station 18 is disposed between the first honing station 256a and the second loading station 15a' such that the wafer carrier 262a' of the first honing unit 25a can be disposed in the cleaning Above station 18'. Referring to Fig. 1 1 there is illustrated a method of processing a semiconductor wafer in a honing apparatus 1 具有 having the honing station 20B in accordance with an embodiment of the present invention. In addition to cleaning the wafer carriers 262b and 262b on the cleaning stations 18 and 18' after transferring the wafers to the loading stations for 15 and 15 d', respectively, The method of processing the semiconductor wafer in the honing apparatus 1 of station 20B is similar to the method of processing the wafer in the honing apparatus 1 of the honing station 20 or the honing station 20A. In other embodiments where the cleaning stations 18 and 18 are located at other locations, the wafers are transferred to the loading stations 丨5b and 15b by the wafer carriers 262a and 262a. 'Or after the wafer is transferred to the loading stations 15d and i5d by the wafer carriers 262b and 262b, the wafer carriers 262a and 262a, or 2 62b and 262b, respectively, at the cleaning stations 18 and 18 , on the cleaning. Referring to the process flow diagram of Figure 13, a method for honing a semiconductor wafer in accordance with an embodiment of the present invention is illustrated. In the step of block 1302, a semiconductor wafer is moved between the first loading station on the first wafer carrier, the first honing port and the first loading station. Further, in the step of block 1300, the first side of the half-31 - 200922746 conductor wafer is honed on the first honing station using the first wafer carrier. In the step of block 1304, the semiconductor wafer is moved between a third loading station on the first wafer carrier, a second honing station, and a fourth loading station. In addition, in the step of block 1304, the other side of the semiconductor wafer is honed on the second honing station by the second wafer carrier. In the step of block 1306, the semiconductor wafer is transferred from the second loading station to the third loading station using a flip robot wafer processing device. Further, in the step of block 1 3 06, the semiconductor wafer is flipped when the semiconductor wafer is transferred from the second loading station to the third loading station. While particular embodiments of the invention have been shown and described, the invention The scope of the invention is defined by the scope of the appended claims and their equivalents. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view of a honing apparatus according to an embodiment of the present invention. Figure 2 is a side view of the honing unit and the loading station of the honing station of the honing device of Table 1, which illustrates how the wafer carrier of the honing unit moves linearly to transfer the semiconductor wafer. Fig. 3 is a plan view showing a loading and unloading station (which can be used in the honing device of Fig. 1) of the embodiment of the present invention. Figure 4 is a cross-sectional view of the loading station of Figure 3. Sections 5(a) and 5(b) are cross-sectional views of the loading station of Figure 3, respectively, for displaying a series of semiconductor wafers W on a wafer carrier. Figure 6 is a top plan view of a honing station in accordance with another embodiment of the present invention. -32- 200922746 Figures 7 and 8 are top views of a wafer flipping device in accordance with an embodiment of the present invention, showing a semiconductor wafer being transferred between two loading stations of the honing device of Figure 1 to also flip the same Semiconductor wafers. Figure 9 is a cross-sectional view of the wafer flipping device of Figures 7 and 8. Fig. 10 is a plan view showing a wafer inverting apparatus according to another embodiment of the present invention. Figure 11 is a plan view of a wafer inverting device in accordance with still another embodiment of the present invention. Figure 12 is a plan view of the cleaning station of the honing station of Figure 11 in accordance with an embodiment of the present invention. Figure 13 is a flow diagram of a method of honing a semiconductor wafer in accordance with an embodiment of the present invention. [Description of main component symbols] 10 Honing device 15 Loading and unloading stations 15a, 15a, first pair of loading and unloading stations 15b, 15b, second pair of loading and unloading stations 15c, 15c' Second pair of loading and unloading stations 15d, 15d' Fourth pair of loading and unloading stations 18 First cleaning station 18' second cleaning station 20' 20A, 20B honing station 22 wafer handling device -33- 200922746 50, 55 wafer turning device 5 (Γ second wafer turning device 5 1 robot arm 60a first Clamping fitting 60b Second clamping fitting 65 Supporting structure 70 Pivot mechanism 71a, 71b Clamping arm 72 Clamping device 73a, 73b Linear moving mechanism 74a '74b Brake 102 Wafer storage station 105 Input buffer station 150 First wafer transfer Device 155 '215 Linear track 160 Second wafer transport device 161 Separator 190 Base 195 Annular wall 200 Lifter 202 Lifting piston 204 Lifting cylinder 210 Second wafer transport Device-34- 200922746 2 11 220 220, 222 224 226 228 230 232 234 236 238 240 250 260 : 270 280 285 272 25 0a 250b 255 , 255a , 255b 256 , 256a , 256b Wafer First Wafer Cleaner Two wafer cleaner wafer receiving station first cleaning station second cleaning station drying station output buffer station first wafer transport device second wafer transport device third wafer transport device fourth wafer transport device first multiple Nozzle second multiple nozzle discharge passage first fluid passage retaining ring vacuum passage second fluid passage first honing unit second honing unit honing pad honing table-35- 200922746 260 wafer carrier 260a, 260b first crystal Round carrier 260a: ' ' 260b5 second wafer carrier 262, 262a ' 262a5 ' wafer carrier 262b ' 262b' 264 carrier shaft 266 rotating vertical slaughter mechanism W wafer 1302 - 1306 block - 36-