200921263 24891tw£d〇c/p UMCD-2007-0079 九、發明說明： 【發明所屬之技術領域】 本發明是有關於—種檢測方法，且特別是有關於—種 檢測光罩缺陷的方法。 【先前技術】 在積體電路製程中，晶圓上或晶圓上之各材料層的圖 案主要是透過光罩圖案的轉移來形成的。典型的方法是先200921263 24891tw£d〇c/p UMCD-2007-0079 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a method of detecting, and in particular to a method of detecting a defect of a reticle. [Prior Art] In the integrated circuit process, the patterns of the material layers on the wafer or on the wafer are mainly formed by the transfer of the mask pattern. The typical method is first
C 在^圓上形成光阻層，然後，經由曝光製程將光罩的圖案 ，影在光阻層上’之後，經由顯影製程使光阻層中形成所 需圖案，其後，經由蝕刻製程將光阻層中的圖案轉移到曰 圓或晶圓上的材料層。 J日日C forms a photoresist layer on the ^ circle, and then, after the pattern of the mask is formed on the photoresist layer via an exposure process, a desired pattern is formed in the photoresist layer through a development process, and thereafter, via an etching process The pattern in the photoresist layer is transferred to a layer of material on the dome or wafer. J day
U 隨著元件不斷的小型化’積體電路愈趨複雜，光罩上 度愈來愈重要。以目前的光罩製造技術並不 ^广' /成料完美無缺，通常，剛製成之新光罩仍有 補^二二須進行檢測，以決定光罩是否可接受、需ί表 製作。另-方面，即使所製成之光罩為^ 定性圖案化製程之前，為確保製程的穩 用過程中必須進行檢測，以避免光罩使 典之二案:精確度。 層，進行曝絲、^的方h實際在晶®上形成光阻 阻層上，進“以直接將光罩的随轉移到光 測。然而中的圖絲輯光罩是否通= 【發明内容】树錄軌不轉，不符合需求。 200921263 2489ltwf.doc/p UMCD-2007-0079 本發明就是在提供一種檢測光罩缺陷的方法，其不需 要實際在晶圓上進行曝光與顯影製程即可進行檢測。 本發明就是在提供一種可以快速檢測光罩缺陷的方 法。 本發明就是在提供一種可以經濟且有效檢測光罩缺陷 的方法。U As components continue to be miniaturized, the integrated circuit becomes more and more complex, and the reticle becomes more and more important. With the current reticle manufacturing technology, it is not perfect. In general, the new reticle that has just been manufactured still has to be tested to determine whether the reticle is acceptable or not. On the other hand, even before the reticle is made into a qualitative patterning process, it is necessary to perform inspection during the process to ensure the stability of the process to avoid the smear case: accuracy. The layer is subjected to the exposure of the wire, and the square h of the film is actually formed on the photoresist layer on the crystal®, and the film is directly transferred to the photometer. However, whether the mask of the wire is passed through or not is included in the invention. 】 Tree recording does not turn, does not meet the requirements. 200921263 2489ltwf.doc/p UMCD-2007-0079 The present invention is to provide a method for detecting reticle defects, which does not require actual exposure and development processes on the wafer. The present invention is directed to a method for quickly detecting reticle defects. The present invention is directed to a method for economically and efficiently detecting reticle defects.
本發明提出一種檢測光罩缺陷的方法。此方法包括建 立儲存夕數個擬真模組之資料庫。擬真模組是實 上取得龍之-修絲料紅。接著，取彳 像。然後，自資料庫之擬真模組產生光罩缺陷影像之模擬 輪廓’之後，再決定光罩之可接受性。 、 依照本發明實施例所述，上述檢測光罩缺陷的方法 中，擬真模組在建立的過程中考慮的因素更包括機台效應。 依照本發明實施例所述，上述檢測光罩缺陷的方法 中，擬真模組包括多個光學鄰近效應校正模擬模組。/ 依照本發明實施例所述，上述檢測光罩缺陷的方法 包括在產生光罩缺陷影像之模擬輪廓之後，進風 則檢驗。 尤予規 依照本發明實施例所述，上述檢測光罩缺陷的 中，光學規則檢驗包括檢驗光罩缺陷影像之模擬，二 層光罩佈局之疊對㈣，或檢驗光罩缺陷影像^ ^ 與後層光罩佈局之疊對情形 杈擬衫像 依照本發明實施例所述，上述檢測光罩缺陷 中’決U罩之可接受狀倾是依據光學規則檢驗之= 200921263 UMCD-2007-0079 24B91twf.doc/p 果來決定的。 依照本發明實施例所述，上述檢測光罩缺陷的方 中，取得光罩缺陷影像之後更包括將光罩缺陷影像數位化。 依照本發明實施例所述，上述檢測光罩缺陷的方去 中，產生光罩缺陷影像之模擬輪廓之步驟是依據全部的數 位化之光罩缺陷影像來產生的。 依照本發明實施例所述，上述檢測光罩缺陷的方法 、中，產生光罩缺陷影像之模擬輪廓之步驟是依據一部分的 數位化之光罩缺陷影像來產生的。 依照本發明實施例所述，上述檢測光罩缺陷的方法 中，决疋光罩之可接受性之步驟是依據所產生之光罩缺陷 影像之模擬輪廓來決定的。 、 依照本發明實施例所述，上述檢測光罩缺陷的方法 中’光罩缺陷影像包括缺陷影像。 依照本發明實施例所述，上述檢測光罩缺陷的方法 中’光罩缺陷影像包括幾何佈局影像以及缺陷影像。 j 依照本發明實施例所述，上述檢測光罩缺陷的方法 中’幾何佈局影像包括一光學鄰近效應修正之幾何佈局影 像。 依照本發明實施例所述，上述檢測光罩缺陷的方法 中成何佈局影像包括一未經光學鄰近效應修正之幾何佈 局影像。 依照本發明實施例所述，上述檢測光罩缺陷的方法 中’取得光罩缺陷影像之前更包括檢測光罩之缺陷，以取 200921263 24891twf.doc/p UMCD-2007-0079 得缺陷影像 依照本發明實施例所述，上述撿測光軍缺陷的 包括將數位化之光罩缺陷影像儲存於資料庫中。 更 行曝法不需要實際在晶圓上進 之缺==光罩缺陷的方法可以快速檢測出光罩上The present invention provides a method of detecting a defect in a reticle. This method involves the creation of a database of immersive modules stored for a few days. The immersive module is actually made of the dragon - repair silk red. Next, take the image. Then, the imaginary module of the database is used to generate the simulated contour of the reticle defect image, and then the acceptability of the reticle is determined. According to the embodiment of the present invention, in the method for detecting a defect of the reticle, the factor considered in the process of establishing the immersive module further includes a machine effect. According to an embodiment of the invention, in the method for detecting a defect of a reticle, the immersive module includes a plurality of optical proximity effect correction simulation modules. / In accordance with an embodiment of the invention, the method of detecting a defect of the reticle includes inspecting the incoming air after the simulated contour of the reticle defect image is generated. In accordance with an embodiment of the present invention, in the above-mentioned detection of the defect of the reticle, the optical rule inspection includes the inspection of the reticle defect image, the stacking of the two-layer reticle layout (4), or the inspection of the reticle defect image ^^ and The stacking of the rear reticle layout is as described in accordance with an embodiment of the present invention, and the acceptable slanting of the hood is determined according to the optical rule = 200921263 UMCD-2007-0079 24B91twf .doc/p to decide. According to an embodiment of the invention, in the detecting the defect of the reticle, after acquiring the reticle defect image, the method further includes digitizing the reticle defect image. According to the embodiment of the invention, the step of detecting the defect of the reticle, the step of generating the simulated contour of the reticle defect image is generated based on all the digital reticle defect images. According to the embodiment of the invention, in the method for detecting a defect of the reticle, the step of generating the simulated contour of the reticle defect image is generated according to a part of the digitized reticle defect image. In accordance with an embodiment of the invention, in the method of detecting a defect of the reticle, the step of determining the acceptability of the reticle is determined based on the simulated contour of the reticle defect image produced. According to the method for detecting a defect of the reticle, the reticle defect image includes a defect image. According to an embodiment of the invention, in the method for detecting a defect of a reticle, the reticle defect image includes a geometric layout image and a defect image. According to the embodiment of the invention, in the above method for detecting a defect of a reticle, the geometric layout image comprises an optical proximity effect corrected geometric layout image. According to an embodiment of the invention, the layout image of the method for detecting a defect of the reticle comprises a geometric layout image corrected without an optical proximity effect. According to the embodiment of the present invention, in the method for detecting a defect of the reticle, the defect of the reticle is further included before the image of the reticle defect is obtained, so as to obtain the defect image of 200921263 24891 twf.doc/p UMCD-2007-0079 according to the present invention. In the embodiment, the flaw detection of the light fixture includes storing the digitized mask defect image in the database. The more exposed method does not need to actually enter the wafer. The method of mask defect can quickly detect the mask.
本發明之檢測光罩缺_方法省時、經濟、有效。 易椹為之上述和其他目的、特徵和優點能更明顯 下特舉較佳實補’並配合所關式，作詳細說 【實施方式】 本發明之實施例之檢測光罩缺陷的方法是將所取得 的光罩缺陷影像崎_定進行之實際參數條件如曝光、 顯影以及烘烤參數斜，藉由具有實晶圓上取得資料The detection mask of the present invention is lacking in time, economy and effectiveness. The above and other objects, features and advantages of the present invention will become more apparent and the invention will be described in detail. The actual mask parameters of the obtained mask defect image, such as exposure, development, and baking parameters, are obtained by having a real wafer.
U 正衣私所建立之擬真模組的資料庫，來模擬晶圓進行 K際製程如曝光與顯影之後的情形，以決定光罩是否可通 過，或是必須進行修補或重製。其詳細之實施例說明如後。 圖1是依據本發明實施例所繪示之一種檢測光罩缺陷 的方法的方塊示意圖。 日請參照圖1，方塊102檢測所提供之光罩的缺陷。所 提供之光罩可以是光罩廠剛製作完成的光罩或是已實際在 半導體廠進行製程之光罩。檢測光罩缺陷的步驟102可以 使用4双測機台，透過晶圓和晶圓之間的比對，或是由通過 200921263 UMCD-2007-0079 24891twf.doc/p 晶圓之光束的干涉情形，抑或是經由比對設計資料庠，/ 找出光罩上可能的缺陷(p〇tential defect)。若檢測機A來 出光罩上無缺陷，則表示光罩的檢驗通過，光罩上=炊測 可以直接轉製(print)於晶圓上，以進行後續之微影製程圖案 若檢測機台測出光罩上有缺陷，則需進—步判 上的缺陷是否可以忽略，或是必須進行修補或重製。罩 所使用的檢測機台可輪出所偵測的光罩缺陷影像，^ ^一’ 者取得光罩缺陷影像，方塊1G4,以進行後續的檢測仃 此處所述的光罩缺陷影像可以包括幾何佈局影像以及^ ° 影像，或是僅包括缺陷影像。幾何佈局影像可以θ细陷 學鄰近效應修正之幾何佈局影像，如較不複雜或 的積體電路’其光罩上之幾何形狀通常與預定在晶圓上: 相對應層之電路圖案相同，而不會經過光學鄰近效廊 正。/幾何佈局影像也可以是經光學鄰近效應修正之幾 局影像，如較為複雜或較為密集的積體電路，電路的 (feature)尺寸幾乎達到光學的極限，為補償鄰近效應，通常 光罩上還會包括一些光學鄰近效應修正圖案，1櫬 (senf)、鎚頭(hammerhead)、誤差(Was)以及辅助條紋如咖 bar)等。缺陷影像可以是各種可能的缺陷的影像，缺陷可 以位在光罩的不透光區域或透光區域。例如是位在不透光 區域上的孔洞缺陷(pinhole defect)或邊緣突出缺陷e defeet)，献位錢光區域上的賴缺陷(啊 defect)、邊緣侵入缺陷(edgeintrusi〇ndefect)，或是位在不 透光區域上連接兩個不駐區的幾何橋接缺陷(ge_try 200921263 UMCD-2007-0079 24891twf.doc/p _ge defeet)，或是位於將透統域_成兩部分 截辦缺陷(geometry break defect)等等。 在取得光罩缺陷影像之後，可以先將 位化餘浦，时便進行後續之擬真模擬，方塊2數 f儲存的讀可以包錢何佈局影像叹缺㈣像的穿透 率、尺寸以及形狀等。資料標的格式並無任何的限制。其 後’可以將數位化之光罩缺陷影像儲存於資料庫中。’、 f 之後，進行方塊刚，將數位化之光罩缺陷 料以及後續狀進行之實際參數條件如後續預定進行之曝 光製程的參數條件、後續狀進行之顯影製程的參數條 件、後、_的烘烤製程的參數條件以及機台的差1 於 影像模擬裝置中’以從影像模擬裝置的資料庫/中的】少二 健真模組產生-光罩雜影像之模擬麵。所輪入^數 位化之光罩缺陷影像的資料可以是光罩上全部的數位化之 光軍缺陷影像㈣。所輸人的數純之光罩缺陷影像的資U The database of immersive modules established by the company is used to simulate the situation after the wafer is processed and developed, such as exposure and development, to determine whether the mask can pass or must be repaired or reworked. A detailed description of the embodiments is given below. 1 is a block diagram of a method of detecting a defect of a reticle according to an embodiment of the invention. Referring to Figure 1, block 102 detects defects in the provided reticle. The reticle provided may be a reticle that has just been fabricated by the reticle factory or a reticle that has been actually processed at a semiconductor factory. The step 102 of detecting the reticle defect can use 4 pairs of measuring machines, through the alignment between the wafer and the wafer, or by the interference of the beam passing the 200921263 UMCD-2007-0079 24891 twf.doc/p wafer. Or by comparing the design data, / to find out the possible defects on the mask. If the detector A comes out of the mask without defects, it means that the inspection of the mask passes, and the mask can be directly printed on the wafer for subsequent lithography process pattern detection. If there is a defect in the mask, it is necessary to further determine whether the defect is negligible or must be repaired or reworked. The detector table used by the cover can rotate the detected mask defect image, and the mask defect image, block 1G4, is used for subsequent detection. The mask defect image described herein can include geometry. Layout images and ^ ° images, or only defective images. The geometric layout image can be a geometric layout image corrected by the proximity effect, such as a less complex or integrated circuit. The geometry on the reticle is usually the same as the circuit pattern on the wafer: the corresponding layer. Will not pass through the optical proximity corridor. /Geometry layout image can also be a few images corrected by optical proximity effect, such as more complex or dense integrated circuit, the feature size of the circuit almost reaches the optical limit, in order to compensate for the proximity effect, usually on the mask It will include some optical proximity effect correction patterns, 1 sen (senf), hammerhead (Wam), error (Was) and auxiliary stripes such as bar). The defective image may be an image of various possible defects, and the defect may be located in an opaque region or a light transmitting region of the reticle. For example, a pinhole defect or an edge defect (e defeet) located on an opaque region, a defect on the light-emitting region, an edge defect, or an edge intrusion defect (edge intrusi〇ndefect), or a bit Connect two non-resident geometric bridging defects (ge_try 200921263 UMCD-2007-0079 24891twf.doc/p _ge defeet) on the opaque area, or locate the two parts in the opaque area (geometry break) Defect) and so on. After obtaining the reticle defect image, you can first digitize the residual pu, and then perform the subsequent immersive simulation. The block 2 number f stored reading can cover the money and the layout image sighs. (4) The penetration rate, size and shape of the image. Wait. There are no restrictions on the format of the data subject. The digital reticle defect image can then be stored in the database. After ', f, the square is just, the actual parameter conditions of the digital mask defect material and the subsequent shape are performed, such as the parameter conditions of the subsequent exposure process, the parameter conditions of the subsequent development process, and the _ The parameter conditions of the baking process and the difference of the machine 1 are generated in the image simulation device from the database of the image simulation device. The data of the reticle defect image that is wheeled into the digital image can be the image of all the digital ray defects on the reticle (4). The number of pure reticle defect images of the input person
V 料也可以是一部份的數位化之光罩缺陷影像資料，1 、共 可選擇一部份之數位化之該光罩缺陷影像做為一預定模擬 區’然後，再依據預定模擬區來產生光罩缺陷影像之模 輪廓。 、 所輸入的曝光參數可以包括曝光系統的數值孔徑 (NA)、曝光系統的同調值(coherency value)、曝光系統所使 用之光源的波長以及劑量、曝光散焦(def〇cus)、透鏡像差 (lens aberration)、晶圓條件、關鍵尺寸等。所輪入的顯影 參數可以包括顯影液的種類、顯影液的濃度、顯影的時間^ 200921263 UMCD-2007-0079 24891twf.doc/p 溫度等。所輸入的烘烤參數則可以包括饵 的溫度以及烘烤的時間等。 、砖的-人數、烘烤 影像模擬裝置㈣料庫t館存著許 真模組是實際從晶圓上取得資料之修=真模組。擬 常，資料庫之擬真模組是在進行光罩檢測前t立者。通 塊觸。擬真模組的建立方法可以先 =建立，方 〇 測試光罩，以不同的曝光、顯影機台，依據2種圖案的 顯影、供烤參數條件來將進行晶圓上之光阻2的曝光、 ，光參數可以包括曝光系統的數值孔徑、曝==化。 值、曝光系統所使用之光源的波長以及能的同調 艿像差、晶®條件、關鍵尺寸等。顯可3二頁 影f的種類、顯影液的濃度、顯影的時間、溫二= 次數，烤的溫度以及:烤： 之後再測置日日圓上之圖案化光阻層之相 o ;=Γΐ料儲存，以建立出多個擬真模組。二實二 二此Μ亩Ά組包括光學鄰近效應校正模擬模組。由於這 實由修正製程所建立，也就是修正製程是 、、 罩上之圖案轉移到晶圓上所得到的資料。因 =吉上之圖案轉移到晶圓上之光阻層的過程中所面臨 二A b况包括光學效應、化學效應以及機台效應等因素 =造成之影響已完全被考慮。光學效應例如是光束通過光 罩所會產生的散射現象、光束通過光罩上不同圖案所產生 的=1歩現象、不平整晶圓所產生之反射光所造成之影響。 化學效應包括顯影與供烤之參數條件所造成之影響。機台 11 200921263 UMCD-2007-0079 24891twf.doc/p 效應則表示不同機台之差異性所造成之影響。因此，在進 行擬真模擬後，影像模擬裝置的資料庫中所產生的光罩缺 陷影像之模擬輪廓可模擬出光罩上的圖案轉製在晶圓上的 情況。 o o 之後，依據所產生之光罩缺陷影像之模擬輪廓，可以 得知可能的缺陷區域對製程所造成的影響，以決定光罩之 =接受性，方塊112。當光罩通過，則可進行後續的微影 製程。當光罩不通過，則可依據需要進行修補或重製。/ 通常，光罩上的缺陷不僅可能會影響晶圓的當層，也 可能會對當層的上、下層有所影響。因此，在產生光罩缺 陷影像之模擬輪廓之後，可以先進行光學規則檢驗 ==rr=u!：Cheek ’LRC)，方塊11G。此光學規則檢 馭々驟^括仏驗虽層之光罩缺陷影像之模擬影像與前層之 祕，或檢驗當層之光罩缺陷影像之模擬 衫像”韻之光罩佈叙疊對情形。再進行光學規 之後本規麟驗的結絲衫鮮的可接受^。 行曝光舆顯影法不需要實时晶圓上進 之缺光罩缺_方法可以快速檢測出光罩上 ϋϋ檢測光罩缺陷的方法省時、經濟、有效。 雖”、、、本發明已以實施例揭露如上，麸旦 2明二任何熱習此技藝者，在不脫離本明:::艮二 圍内4可作些許之更動與_，因此轉明之 12 200921263 UMCD-2007-0079 24891twf.doc/p 當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 圖1是依據本發明實施例所繪示之一種檢測光罩缺陷 的方法的方塊示意圖。 【主要元件符號說明】 100〜112 :步驟方塊The V material may also be a part of the digitized mask defect image data. 1. A part of the digitized mask defect image may be selected as a predetermined simulation area. Then, according to the predetermined simulation area. Produces a contour of the reticle defect image. The input exposure parameters may include the numerical aperture (NA) of the exposure system, the coherency value of the exposure system, the wavelength of the light source used by the exposure system, and the dose, exposure defocus (def〇cus), lens aberration (lens aberration), wafer conditions, critical dimensions, etc. The development parameters to be rotated may include the type of the developer, the concentration of the developer, and the development time ^ 200921263 UMCD-2007-0079 24891twf.doc/p temperature, and the like. The input baking parameters may include the temperature of the bait and the time of baking. Brick-number of people, baking Image simulation device (4) The library is stored in the library t. The real module is the repair module that actually obtains the data from the wafer. Normally, the immersive module of the database is used before the mask inspection. Through the block. The method of establishing the immersive module can be first established, the test reticle is tested, and the exposure of the photoresist on the wafer is performed according to the conditions of the development and the baking parameters of the two patterns with different exposure and development machines. The light parameter may include a numerical aperture of the exposure system, exposure ==. Value, wavelength of the source used in the exposure system, and coherent 艿 aberration, crystal® conditions, critical dimensions, etc. The type of the 3nd page shadow f, the concentration of the developer, the time of development, the temperature of the second = the number of times, the temperature of the baking, and the: baking: then the phase of the patterned photoresist layer on the Japanese yen is measured; =Γΐ Material storage to create multiple immersive modules. The second real two-two group includes the optical proximity effect correction simulation module. Since this is actually established by the correction process, that is, the correction process is the data obtained by transferring the pattern on the cover to the wafer. The effect of the pattern on the photo-resist layer on the wafer is affected by factors such as optical effects, chemical effects, and machine effects. The effects have been fully considered. The optical effects are, for example, the scattering phenomenon caused by the light beam passing through the reticle, the 歩 phenomenon caused by the different patterns of the light beam passing through the reticle, and the reflected light generated by the uneven wafer. Chemical effects include the effects of developing and bake parameters. Machine 11 200921263 UMCD-2007-0079 24891twf.doc/p Effect indicates the impact of the difference between different machines. Therefore, after the immersive simulation, the simulated contour of the reticle defect image generated in the database of the image simulation device can simulate the pattern on the reticle being transferred onto the wafer. After o o, based on the simulated contour of the resulting reticle defect image, the effect of the possible defect area on the process can be known to determine the reticle = acceptability, block 112. When the reticle passes, a subsequent lithography process can be performed. When the mask does not pass, it can be repaired or reworked as needed. / In general, defects on the reticle may not only affect the layer of the wafer, but may also affect the upper and lower layers of the layer. Therefore, after the simulated contour of the reticle defect image is generated, the optical rule check can be performed first == rr = u!: Cheek 'LRC), block 11G. The optical rule inspection step includes checking the simulated image of the reticle defect image of the layer and the secret of the front layer, or verifying the simulated shirt image of the reticle defect image of the layer. After the optical gauge is applied, the knotted silk sweater is acceptable. The exposure and development method does not require the lack of real-time wafers. The method can quickly detect the mask on the mask. The method of defect is time-saving, economical and effective. Although the invention has been disclosed in the above embodiments, any person who is interested in this skill in the bran 2, can not deviate from the description of this: Make a few changes and _, so the clarification of 12 200921263 UMCD-2007-0079 24891twf.doc / p is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram showing a method of detecting a defect of a reticle according to an embodiment of the invention. [Main component symbol description] 100~112: Step block