TW200920873A - Method of forming a conductor layer, method of manufacturing a circuit board, method of manufacturing conductive fine particles, and composition for forming a conductor layer - Google Patents

Method of forming a conductor layer, method of manufacturing a circuit board, method of manufacturing conductive fine particles, and composition for forming a conductor layer Download PDF

Info

Publication number
TW200920873A
TW200920873A TW097134815A TW97134815A TW200920873A TW 200920873 A TW200920873 A TW 200920873A TW 097134815 A TW097134815 A TW 097134815A TW 97134815 A TW97134815 A TW 97134815A TW 200920873 A TW200920873 A TW 200920873A
Authority
TW
Taiwan
Prior art keywords
metal
film
resin
conductor layer
polyimide
Prior art date
Application number
TW097134815A
Other languages
Chinese (zh)
Other versions
TWI458855B (en
Inventor
Yasushi Enomoto
Yasufumi Matsumura
Original Assignee
Nippon Steel Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Chemical Co filed Critical Nippon Steel Chemical Co
Publication of TW200920873A publication Critical patent/TW200920873A/en
Application granted granted Critical
Publication of TWI458855B publication Critical patent/TWI458855B/en

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H05K3/181Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating
    • H05K3/182Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by electroless plating characterised by the patterning method
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04Coating
    • C08J7/043Improving the adhesiveness of the coatings per se, e.g. forming primers
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04Coating
    • C08J7/044Forming conductive coatings; Forming coatings having anti-static properties
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04Coating
    • C08J7/06Coating with compositions not containing macromolecular substances
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1646Characteristics of the product obtained
    • C23C18/165Multilayered product
    • C23C18/1653Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601Process or apparatus
    • C23C18/1633Process of electroless plating
    • C23C18/1655Process features
    • C23C18/1658Process features with two steps starting with metal deposition followed by addition of reducing agent
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18Pretreatment of the material to be coated
    • C23C18/20Pretreatment of the material to be coated of organic surfaces, e.g. resins
    • C23C18/2006Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30
    • C23C18/2046Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment
    • C23C18/2053Pretreatment of the material to be coated of organic surfaces, e.g. resins by other methods than those of C23C18/22 - C23C18/30 by chemical pretreatment only one step pretreatment
    • C23C18/2066Use of organic or inorganic compounds other than metals, e.g. activation, sensitisation with polymers
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31Coating with metals
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48After-treatment of electroplated surfaces
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/10Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/105Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by conversion of non-conductive material on or in the support into conductive material, e.g. by using an energy beam
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2379/00Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen, or carbon only, not provided for in groups C08J2361/00 - C08J2377/00
    • C08J2379/04Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08J2379/08Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01Dielectrics
    • H05K2201/0137Materials
    • H05K2201/0154Polyimide
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/01Tools for processing; Objects used during processing
    • H05K2203/0104Tools for processing; Objects used during processing for patterning or coating
    • H05K2203/0126Dispenser, e.g. for solder paste, for supplying conductive paste for screen printing or for filling holes
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05Patterning and lithography; Masks; Details of resist
    • H05K2203/0502Patterning and lithography
    • H05K2203/0522Using an adhesive pattern
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1157Using means for chemical reduction
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/12Using specific substances
    • H05K2203/121Metallo-organic compounds
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/38Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/386Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive
    • H05K3/387Improvement of the adhesion between the insulating substrate and the metal by the use of an organic polymeric bonding layer, e.g. adhesive for electroless plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrochemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Chemically Coating (AREA)

Abstract

A method of forming a conductor layer includes: a coating film formation step (S1) of forming a coating film by applying a coating liquid containing a polyimide precursor resin onto the surface of an insulating substrate and drying the same; an impregnation step (S2) of treating the coating film with a metallic compound solution and thereby impregnating the surface layer of the coating film with metal ions present in the solution; a metal coating formation step (S3) of forming a metal coating as the conductor layer by subjecting the metal ions impregnated into the surface layer of the coating film to a reduction treatment; and an imidization step (S5) of imidizing the polyimide precursor resin in the coating film to thereby form a polyimide resin layer. The metallic compound solution contains: a metallic compound including a metal having a normal electrode potential of -0.25 to + 1.55; and a nitrogen-containing compound having an equilibrium constant of 6 or lower for a complex-forming reaction with the metal ions, and has a pH of 9 to 12.

Description

200920873 六、發明說明: 【發明所屬之技術領域】 树明係關於例如形成於電子零件中成為佈線等之導體層 的$成方法、儀此導體層之形成方法的電路絲之製造方法200920873 6. TECHNOLOGICAL FIELD OF THE INVENTION [Technical Fields of the Invention] A method for manufacturing a circuit wire, for example, a method for forming a conductor layer of a wiring or the like in an electronic component, and a method for forming a conductor layer

及導電性微粒子之絮】生士、t B &方法’暨形成導體層所使用的導體層形 成用組成物。 【先前技術】 逍著近年來之電子零件之小型化或訊號傳達速度之高速 二可%印刷基板等之電路基板係需要高密度佈線。於實 Μ门密度佈料可或缺的是將形成有®案之導體層予以細 微加工⑽’右對導體層進行細微加工,财與基材之密接 |±降低的缺點。從而’為了達到電子零件之可靠性與產率之提 升重要的疋提向導體層與基板之密接性而使其可咐受細微加 工。 ^為;電路基板上形成細微圖案且與基材之密接性優越之 ^體層的方法’於專散獻1 t記載有下述方法:_於含有 有機办W之熱硬化性樹脂組成物中均勻地分散細微平均粒徑 之金屬超微粒子而成的導電性金屬f。此專利文獻丨之找 中,係利”墨方式之印微術將導電性金屬膏塗佈至基板上 ,’將塗佈膜加熱至15(rc~21(rc之溫度。該加熱係以使金屬 1粒子坟、’、。而達到塗佈膜之導通、並使熱硬化性樹脂硬化為目 的而進行。然而’於專利文獻1之方法中,若未能顺利進行金 97134815 4 200920873 屬Μ粒子之燒結,則無法達到導體層之導通,而有使電子零件 之可靠性降低的可能性。 另外,作為不使用金屬微粒子之導體層之形成方法,於專利 文獻2中記載有下述方法:使用含有含鈀離子化合物與聚醯亞 胺先質樹脂的聚醯亞胺先質樹脂溶液。此專利文獻2之方法 中’係藉棒塗機將上述聚酿亞胺先質樹脂溶液塗佈至聚酿亞胺 基材上後,使塗佈膜乾燥而形成聚醯亞胺先質金屬錯合物層。 八人,於氫供給體之存在下對此聚醯亞胺先質金屬錯合物層照 射务'外線’形成鑛敷基質核後,藉無電解鍍敷處理形成鑛敷基 質金屬層。再者,於鍵敷基質金屬層上藉電鍍形成電鍍層後或 ;形成如將聚醯亞胺先質樹脂進行加熱醯亞胺化而形成聚醯 亞胺樹脂層。此專利文獻2所記載之技術由於未使用含金屬微 粒子之的導電性金屬膏,故具有可不受金屬微粒子之燒結狀態 所左右而形成導體層的優點。然而,此專利文獻2之方法中, =了使金屬離子還原而採用紫外線照射還原,由於金屬離子之 遏原效率不足,故有必須進行無電解鍍敷之步驟的問題。 〜另外,作為於樹脂表面形成金屬層之方法,已知有將陽離子 交換基導入至樹脂製基材中後,將其以含金屬離子液進行處理 而使金屬離子化學性地吸附至陽離子交換基,其後進行還原處 理=方法。然而,在將吸附於陽離子交換基之金屬離子藉還原 ▲液進域式還原時,金屬對於樹脂表面析出為島狀,故有 難以形成無缺陷之金屬被膜的問題。為了改善此問題,例如專 97134815 200920873 利文獻3記載有下述技術:將使金屬離子吸附於陽離子交換基 的《亞胺樹脂的還原處理,於調製成pHi〜6之還原劑溶液中 —進行’再進行無電解鑛敷。然而,專利文獻3之方法中,必須 - 有將陽離子交換基先導人至_亞胺獅中之步驟與無電解 鍍敷步驟,故有步驟數增加之缺點。 專利文獻1:曰本專利特開2002_324966號公報 專利文獻2 :日本專利特開2005-154880號公報 (" 專利文獻L曰本專利特開2002-266075號公報 【發明内容】 • (發明所欲解決之問題) ‘ 上料敝獻2及專散獻3之方法,均為了形成與聚醯亞 胺樹脂之密接性高的導體層,而包括於聚酸亞胺樹脂或聚酿亞 胺先質樹脂之表面使金屬離子還原而析出金屬的步驟。然而, 若還原效率低,或金屬離子對樹脂之吸附量不足,則還原處理 〇 後之金屬被膜上發生之缺陷變多,依其狀態無法達到導通,而 結果無法使用作為電鍍核(種)。因此,上述專利文獻2及專利 文獻3之方法中,必須有對析出之金屬被膜進行無電解鍍敷的 步驟。然而,無電解鑛敷具有鍍液之管理或廢》夜之處理繁雜', 亦必須考慮對環境之影響的問題。因此,強烈期盼能開發^ 需進行無電解鍍敷,而可形成對基材表面之密接性優越之“、' 層的替代技術。 Μ 本發明之目的在於提供藉由金屬離子之還原處理,而於妒釀 97134815 6 200920873 亞胺樹脂表面形成與聚醯亞胺樹脂之密接強度優越、且缺陷少 之導體層的方法。 (解決問題之手段) 本發明第1觀狀導體層之形成方法,係於雜亞胺樹月旨基 材或聚醒亞胺樹脂膜之表面形成導體層者,其特徵為具備下述 步驟: 含浸步驟,係藉由含有含標準電極電位為_Q. 25至化Μ之 範圍内之金屬的金屬化合物、及與上述金屬之離子間的錯合反 應之平衡常數為6以下之含氮化合物,且pH為9至12範圍内 的金屬化合物溶液,對由屬於《亞胺樹脂之先質的聚醯亞胺 =質樹脂所形成之基材或膜進行處理,而使上述金屬之離子含 浸至由上述聚醯亞胺先質樹脂所形成之基材或膜的表層七與 巫屬被膜域步驟’係將含浸於由上述輯亞胺先質樹脂所 形成之基材或膜之表層中的上述金屬之離子進行還原處理,而 ,形成作為上述導體層之金屬被膜。 上述第1觀點之導體層之形成方法中,上述標準電極電位為 25至+1. 55範圍内之金屬,可為由犯、%、此n 肋、Ag、Pt及Au所組成群選擇之!種或2種以上。 另外,上述第1觀點之導體層之職方法巾,上述含氮化人 物可為氨或者1級或2級胺。 ,σ 另外上述第i觀點之導體層之形成方法中,上述導體層可 為經圖案化之導體層。 曰 97134815 200920873 另外,上述第1觀點之導體層之形成方法中,上述聚醯亞胺 樹脂膜可形成於球狀絕緣基材之表面上。 另外’上述第1觀點之導體層之形成方法中,上述聚酿亞胺 、 樹脂基材可為球狀聚醯亞胺樹脂基材。 本發明之第2觀點的電路基板之製造方法,係具備絕緣基材 與形成於該絕緣基材上之導體層的電路基板之製造方法,其特 徵為具備於上述絕緣基材上形成上述導體層之步驟,此步驟含 〇 有: 塗佈膜形成步驟’係將含有聚醯亞胺先質樹脂之塗佈液塗佈 至上述絕緣基材之表面上,並予以乾燥而形成塗佈膜; 含浸步驟,係將上述塗佈膜藉金屬化合物溶液進行處理,而 使該溶液中之金屬離子含浸至上述塗佈膜表層_ ;與 金屬被膜形成步驟,係將含浸至上述塗佈膜表層十之金屬離 子進行還原處理,而形成作為上述導體層之金屬被膜; 〇 上述金屬化合物溶液係含有含標準電極電位為-0.25至 +1. 55之範圍内之金屬的金屬化合物、及與上述金屬之離子間 的錯合反應之平衡常數為6以下之含氮化合物,且係pH為9 至12範圍内之溶液。 本發明之苐3觀點的導電性微粒子之製造方法,係具備球狀 絕緣基材與覆蓋該球狀絕緣基材之導體層的導電性微粒子之 製ie方法’其特徵為具備於上述球狀絕緣基材之表面形成上述 導體層之步驟,此步驟含有: 97134815 8 200920873 被膜形成步驟,係將含有輯亞胺先質樹脂之塗佈液塗佈至 上述球狀絕緣基材之表面上,並予以乾燥而形成覆蓋該球狀絕 緣基材的樹脂被膜; … 含浸步驟’係將上述樹脂被膜藉金屬化合物溶液進行處理, 而使該溶液中之金屬離子含浸至上述樹脂被膜之表層中丨與 金屬被卿成步驟,係將含浸至上述樹脂被膜表層中之金屬 離子進㈣原處理,㈣鑛為上料體層之金屬被膜; ( 上述金屬化合物溶液係含有含標準電極電位為_0 25至 +1. 55之範_之金屬的金屬化合物、及與上述金屬之離子間 的錯合反應之平衡常數為6以下之含氮化合物,且係邱為9 至12範圍内之溶液。 本發明之第4觀點的導電性微粒子之製造方法,係具備球狀 聚酿亞胺樹脂基材與覆蓋該球狀雜亞胺樹脂基材之導體層 的導電性微粒子之製造方法,其特徵為具備於藉酿亞胺化而^ 為上述球狀聚醯亞胺樹脂樹脂基材的聚醯亞胺先質樹脂之球 狀粒子之表面形成上述導體層之步驟,此步驟含有: 含浸步驟,係將上述雜粒子之表面藉金屬化合物溶液進行 處理,而使該溶液中之金屬離子含浸至上述球狀粒子之表層 中;與 曰 金屬被膜形成步驟,係將含浸至上述球狀粒子表層中之金屬 離子進行顧處理’㈣成作為上述導體狀金屬被膜; 上述金屬化合物溶液係含有含標準電極電位為_〇 25至 97134815 9 200920873 +1.55之範圍内之金屬的金屬化合物、及與上述金屬之離子間 的錯合反應之平衡常數為6以下之含氮化合物,且係、pH為9 至12範圍内之溶液。 本發明第5觀點之導體層形成用組成物,係用於為了於聚醯 亞胺樹脂騎或㈣亞麟賴之表社形成導體層,而使金 屬離子含浸至由屬於聚醯亞胺樹脂先質之聚醯亞胺先質樹脂 所形成之基材或膜中的處理中者,其特徵為, 含有含標準電極電位為—0.25至+1_55之範圍内之金屬的金 屬化合物、及與上述金屬之離子間的錯合反應之平衡常數為6 以下之含氮化合物,且pH為9至12範圍内。 尚且,本發明中所謂「導體層」,係使用下述兩者意義:包 括藉金屬離子之還原而形成於聚醯亞胺樹脂之表面上的金屬 被膜的意義;與包括上述金屬被膜及形成於其上層之電鍍層的 意義。又,導體層亦可具有金屬被膜或電鍍層以外之任意層。 (發明效果) 本發明之導體層之形成方法,係使用含有含標準電極電位為 -0. 25至+1. 55之範圍内之金屬的金屬化合物、及與上述金屬 的錯合反應之平衡常數為6以下之含氮化合物,且pH為9至 12範圍内的金屬化合物溶液。藉由使用此金屬化合物溶液, 可使於形成金屬被膜時為充分量之金屬離子含浸於聚酿亞胺 先質樹脂中,並可於還原處理中得到高還原效率。而且,根據 本發明之導體層之形成方法,藉由依使充分量之金屬離子含浸 97134815 10 200920873 至聚醯亞胺先質樹脂中的狀態進行還原處理,則可無須進行無 私解鍍敷步驟,容易地形成與聚酿亞胺樹脂之密接性優越且緻 密的金屬被膜。 — 外,根據利用了本發明之導體層之形成方法的電路基板之 製造方法,可依高產率製造絕緣基材與聚醯亞胺樹脂層間、聚 酿亞胺樹脂層與作為佈線之導體層間的密接性優越,可靠性高 的電子零件。 ° (另外’根據利用了本發明之導體層之形成方法的導電性微粒 子之衣造方法,可製造聚醯亞胺樹脂基材或聚醯亞胺樹脂層與 ν體層間之密接性優越的導電性微粒子。此導電性微粒子係於 各種電子令件之製造過程中,可利用於例如焊球、導電性膏、 導電性接黏材等之用途。 另卜本發明之導體層形成用組成物,由於含有含標準電極 為〇· 25至+1.55之範圍内之金屬的金屬化合物、及與上 。 述金屬之離子間的錯合反應之平衡常數為6以下之含氮化合 物’且pH為9至12範圍内,故在應用於聚醯亞胺先質樹脂時, 可使6亥組成物中之金屬離子大量地含浸至聚醯亞胺先質樹脂 之表層中。又,藉由使用本發明之導體層形成用組成物,於還 原處理中可得到高還原效率 。因此,藉由使用本發明之導體層 形成用組成物’則無需無電解鍍敷步驟,可容易地形成與聚醢 亞胺樹脂間之密接性優越、且緻密的金屬被膜。如此,本發明 之^體層形成用組成物係在於聚醯亞胺樹脂表層形成導體層 97134815 11 200920873 時具有極高利用價值。 本發明之其他目的、特徵及優點可根據以下說明而充分闡 -明。 【實施方式】 [第1實施形態] 以下,針對本發明實施形態,參照圖式進行詳細說明。圖丄 係表示本實施形態之導體層之形成方法所應用的電路基板之 (Ί 概略構成的立體圖。圖2為放大表示圖1之電路基板之主要部 分剖面的說明圖。 首先,參照圖1及圖2說明本發明實施形態所應用之電路基 板1。電路基板1係具備絕緣基材3與於該絕緣基材3上成為 佈線之圖案化導體層5。作為絕緣基材3,可使用例如玻璃基 板、矽基板、陶瓷基板等之無機基板,或聚醯亞胺樹脂、聚對 苯二甲酸乙二酯(PET)等之合成樹脂基板。 (J 圖案化導體層5係如圖2所示般,具有於絕緣基材3上經由And a conductive fine particle floc; a raw material, a t B &method' and a conductor layer forming composition used for forming a conductor layer. [Prior Art] In recent years, the miniaturization of electronic components and the speed of signal transmission are required. High-density wiring is required for circuit boards such as printed substrates. What is indispensable for real-thickness density fabrics is that the conductor layer formed with the ® case is finely processed (10)'. The right-handed conductor layer is finely processed, and the close contact with the substrate is reduced. Therefore, in order to achieve an increase in the reliability and productivity of the electronic component, it is important to improve the adhesion between the conductor layer and the substrate, so that it can be finely processed. ^ is a method for forming a fine pattern on a circuit board and having excellent adhesion to a substrate. The method described below is described in the following: _ uniform in a thermosetting resin composition containing an organic W A conductive metal f obtained by dispersing fine metal particles having a fine average particle diameter. In the search for this patent document, the printing method of the ink method is applied to the substrate by the electroless metal paste, and the coating film is heated to 15 (rc~21 (the temperature of rc. The heating system is such that It is carried out for the purpose of curing the coating film and curing the thermosetting resin. However, in the method of Patent Document 1, if the gold 97134815 4 200920873 is not successfully carried out, it is a cerium particle. In the case of sintering, the conduction of the conductor layer is not achieved, and the reliability of the electronic component may be lowered. Further, as a method of forming a conductor layer that does not use metal fine particles, Patent Document 2 describes the following method: A polyamidene precursor resin solution containing a palladium ion-containing compound and a polyimine precursor resin. In the method of Patent Document 2, the above-mentioned polyamidene precursor resin solution is applied to a polymer by a bar coater. After brewing the imine substrate, the coating film is dried to form a polyimine precursor metal complex layer. Eight people, in the presence of a hydrogen donor, the polyimine precursor metal complex layer Irradiation service 'outside line' forms ore matrix nucleus Thereafter, the metal layer of the mineralized matrix is formed by electroless plating treatment. Further, after the plating layer is formed by plating on the metal layer of the keying matrix, or the like, the polyimine precursor resin is heated and imidized. The polyimine resin layer is formed. The technique described in Patent Document 2 does not use a conductive metal paste containing metal fine particles, and therefore has an advantage that the conductor layer can be formed without being affected by the sintered state of the metal fine particles. In the method of Patent Document 2, the reduction of the metal ions is carried out by ultraviolet irradiation, and the efficiency of suppressing the metal ions is insufficient. Therefore, there is a problem that the step of electroless plating is required. In the method of the layer, it is known that after introducing a cation exchange group into a resin substrate, the metal ion is chemically adsorbed to the cation exchange group by a metal ion-containing liquid, and then a reduction treatment is performed. However, when the metal ion adsorbed to the cation exchange group is reduced by the reduction ▲ liquid, the metal precipitates as an island on the surface of the resin. There is a problem that it is difficult to form a metal film having no defects. In order to improve this problem, for example, JP-A 97314815 200920873 discloses a technique in which a metal ion is adsorbed to a cation exchange group to reduce the imine resin. In the reducing agent solution of pHi~6, 're-electroless mineralization is carried out. However, in the method of Patent Document 3, it is necessary to have a step of introducing a cation exchange group into the sulphuric lion and an electroless plating step. Therefore, there is a disadvantage that the number of steps is increased. Patent Document 1: Japanese Laid-Open Patent Publication No. 2002-324966 (Patent Document No. JP-A-2005-154880) (Patent Document No. 2002-266075) [Summary of the Invention] • (The problem to be solved by the invention) The method of feeding and dispensing 3 is to form a conductor layer having high adhesion to the polyimide resin, and is included in the polyacid A step of reducing the metal ions to precipitate a metal on the surface of the amine resin or the polyanilin precursor resin. However, if the reduction efficiency is low or the amount of adsorption of the metal ions to the resin is insufficient, the defects occurring on the metal film after the reduction treatment become large, and the conduction cannot be achieved depending on the state, and as a result, the plating core (species) cannot be used. Therefore, in the methods of Patent Document 2 and Patent Document 3, it is necessary to carry out the step of electroless plating of the deposited metal film. However, electroless ore has the management of the plating solution or the waste of the night treatment, and must also consider the impact on the environment. Therefore, it is strongly desired to develop an "alternative technique" of "layer" which is required to perform electroless plating and which is excellent in adhesion to the surface of the substrate. Μ The object of the present invention is to provide a reduction treatment by metal ions. Further, a method of forming a conductor layer having excellent adhesion strength to a polyimide resin and having few defects is formed on the surface of the imine resin. The method for forming the first observation conductor layer of the present invention is The method of forming a conductor layer on the surface of the hetero-imide tree substrate or the wake-up imine resin film is characterized in that the step of impregnation is carried out by containing a standard electrode potential of _Q. a metal compound solution having a metal compound in a range of a ruthenium and a nitrogen-containing compound having an equilibrium constant of 6 or less and a pH of 9 to 12, and belonging to the sub The substrate or film formed of the precursor of the amine resin = the resin or the film, and the ions of the above metal are impregnated into the surface layer of the substrate or film formed of the above-mentioned polyimide resin The step of forming a metal film as the conductor layer is carried out by reducing the ions of the metal impregnated in the surface layer of the substrate or the film formed of the imine precursor resin. In the method for forming a conductor layer according to the first aspect, the metal having a standard electrode potential of 25 to +1. 55 may be selected from the group consisting of a crime, a %, a rib, an Ag, a Pt, and an Au. Further, in the above method of the conductor layer of the first aspect, the nitriding person may be ammonia or a first- or second-order amine. σ In addition to the method for forming a conductor layer of the above i-th aspect, The conductor layer may be a patterned conductor layer. 曰97134815 200920873 In the method for forming a conductor layer according to the first aspect, the polyimide film may be formed on a surface of a spherical insulating substrate. In the method of forming a conductor layer according to the first aspect of the invention, the method of producing a circuit board of the second aspect of the present invention is to provide an insulating base. Material and formation A method of manufacturing a circuit board of a conductor layer on an insulating substrate, comprising the step of forming the conductor layer on the insulating substrate, wherein the step of forming a coating film includes a step of forming a coating film a coating liquid of an amine precursor resin is applied onto the surface of the insulating substrate and dried to form a coating film; and the impregnation step is performed by treating the coating film with a metal compound solution to make the solution The metal ion is impregnated into the surface layer of the coating film _; and the metal film forming step is to reduce the metal ions impregnated into the surface layer of the coating film to form a metal film as the conductor layer; a metal compound containing a metal having a standard electrode potential in the range of -0.25 to +1.55, and a nitrogen-containing compound having an equilibrium constant of 6 or less with a mismatch reaction with the ion of the above metal, and having a pH of 9 to A solution in the range of 12. The method for producing conductive fine particles according to the third aspect of the present invention is characterized in that the spherical insulating substrate and the conductive fine particles covering the conductive layer of the spherical insulating substrate are characterized in that they are provided in the spherical insulating layer. a step of forming the conductor layer on the surface of the substrate, the step comprising: 97134815 8 200920873 a film forming step of applying a coating liquid containing an imine precursor resin onto the surface of the spherical insulating substrate, and applying Drying to form a resin film covering the spherical insulating substrate; ... the impregnation step' is to treat the resin film by a metal compound solution, so that metal ions in the solution are impregnated into the surface layer of the resin film, and the metal is In the step of forming, the metal ions impregnated into the surface layer of the resin film are subjected to (iv) original treatment, and (4) the ore is a metal film of the upper body layer; (the above metal compound solution contains a standard electrode potential of _0 25 to +1. a metal compound having a metal of 55 and a nitrogen-containing compound having an equilibrium constant of 6 or less in a misalignment reaction with an ion of the above metal, and The method of producing the conductive fine particles according to the fourth aspect of the present invention is characterized in that the spherical polyimide-based resin substrate and the conductive layer covering the spherical hetero-imide resin substrate are electrically conductive. And a method for producing the fine particles, comprising the step of forming the conductor layer on the surface of the spherical particles of the polyimine precursor resin which is subjected to the imidization of the spherical polyimide resin substrate The step includes: impregnating the step of treating the surface of the above-mentioned heteroparticles with a metal compound solution, thereby impregnating the metal ions in the solution into the surface layer of the spherical particles; and forming the impregnation with the base metal film forming step The metal ions in the surface layer of the spherical particles are treated as (4) as the conductive metal film; the metal compound solution contains a metal containing a metal having a standard electrode potential in the range of _〇25 to 97138815 9 200920873 +1.55 a nitrogen-containing compound having an equilibrium constant of a compound and a complex reaction with an ion of the above metal, and having a pH of from 9 to 12 The composition for forming a conductor layer according to the fifth aspect of the present invention is for impregnating a metal ion to a polyimine resin for forming a conductor layer on a polyimide or a semiconductor layer. a metal substrate containing a metal having a standard electrode potential in a range of from -0.25 to +1_55, and a treatment in a substrate or a film formed of a precursor of a polyimide-based precursor resin The nitrogen-containing compound having a balance constant of the metal ion is 6 or less and has a pH of 9 to 12. Further, the "conductor layer" in the present invention uses the following two meanings: The meaning of the metal film formed on the surface of the polyimide resin by the reduction of ions; and the meaning of the plating film including the above metal film and the upper layer formed thereon. Further, the conductor layer may have any layer other than the metal film or the plating layer. (Effect of the Invention) The method for forming a conductor layer of the present invention is to use a metal compound containing a metal having a standard electrode potential of from -0.25 to 1.55, and an equilibrium constant of a mismatch reaction with the above metal. A metal compound solution having a nitrogen-containing compound of 6 or less and having a pH of 9 to 12. By using this metal compound solution, a sufficient amount of metal ions can be impregnated into the polyamidene precursor resin when the metal film is formed, and high reduction efficiency can be obtained in the reduction treatment. Further, according to the method for forming a conductor layer of the present invention, by subjecting a sufficient amount of metal ions to impregnate the state of 9713815 10 200920873 to the polyimine precursor resin, it is not necessary to carry out the step of selfless plating. The ground forms a dense and dense metal film with the polyimide resin. Further, according to the method of manufacturing a circuit board using the method for forming a conductor layer of the present invention, an insulating substrate and a polyimide film layer, a polyimide resin layer, and a conductor layer as a wiring can be produced at a high yield. Excellent electronic components with high adhesion and reliability. ° (In addition, according to the method for producing conductive fine particles using the method for forming a conductor layer of the present invention, it is possible to produce a conductive material having excellent adhesion between the polyimide film substrate or the polyimide layer and the ν layer; The fine particles are used in the production process of various electronic components, and can be used for, for example, solder balls, conductive pastes, conductive adhesives, etc. Further, the conductor layer forming composition of the present invention, A nitrogen-containing compound having a balance constant of 6 or less and a pH of 9 to a metal compound containing a metal having a standard electrode in the range of 〇·25 to +1.55 and a mismatch reaction with an ion of the above metal In the range of 12, when used in the polyimine precursor resin, the metal ions in the 6-well composition can be largely impregnated into the surface layer of the polyimide precursor resin. Further, by using the present invention The conductor layer forming composition can provide high reduction efficiency in the reduction treatment. Therefore, by using the conductor layer forming composition 'of the present invention, the electroless plating step can be easily formed, and the polysiloxane can be easily formed. The composition for forming a bulk layer of the present invention is excellent in the use of the surface layer forming conductor layer of the polyimide layer to form a conductor layer 9713815 11 200920873. Other objects of the present invention [Embodiment] [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Fig. 表示 shows a conductor layer of this embodiment. FIG. 2 is an enlarged explanatory view showing a cross section of a main part of the circuit board of FIG. 1. First, a circuit to which the embodiment of the present invention is applied will be described with reference to FIGS. 1 and 2. The circuit board 1 includes an insulating base material 3 and a patterned conductor layer 5 which is a wiring on the insulating base material 3. As the insulating base material 3, an inorganic substrate such as a glass substrate, a tantalum substrate, or a ceramic substrate can be used. Or a synthetic resin substrate such as polyimine resin or polyethylene terephthalate (PET). (J patterned conductor layer 5 is as shown in Fig. 2 3 having a via in the insulating substrate

聚醯亞胺樹脂層7而形成之金屬被膜9、與形成為覆蓋金屬被 膜9的電鍍層11。此等聚醯亞胺樹脂層7、金屬被膜9及電鍍 層11係被圖案形成為既定形狀。又,亦可不設置電鍍層η。 本實施形態中,僅將金屬被膜9、或將金屬被膜9及電鍍層U 分別視為「圖案化導體層5」。又,圖案化導體層5除了上述 各層以外尚可具有任意之層。 聚酸亞胺樹脂層7係以將屬於聚酿亞胺先質樹脂之聚醯胺 97134815 12 200920873 酸加熱並使其進行脫水•環化反應而經醯亞胺化的聚醯亞胺樹 脂作為主體者。聚醯亞胺樹脂相較於其他樹脂,例如環氧樹 - 脂、酚樹脂、丙烯酸系樹脂等之熱硬化性樹脂,由於具有耐熱 性及尺寸穩定性優越的性質,故較適合使用。本實施形態中之 聚醯亞胺樹脂層7,係於絕緣基材3上將含有聚醯亞胺先質樹 脂之塗佈液進行圖案塗佈後,將聚醯亞胺先質樹脂醯亞胺化而 形成者。因此,聚醯亞胺樹脂層7對絕緣基材3具有高密接性。 此種聚醯亞胺樹脂層7介存於絕緣基材3與金屬被膜9之間, 發揮黏合劑的功用。 金屬被膜9係由下述金屬所構成的被膜:藉由將含浸於聚醯 亞胺先質樹脂(藉醯亞胺化而成騎醯亞胺樹脂層7)的金屬離 子還原’而析出至聚酿亞胺先質樹脂表面的金屬。作為構成金 屬被膜9之金屬’係如後述般使用標準電極電位為一〇·25至 +1. 55之範圍内之金屬。 。 電鍍層11係以例如Cu、Au、Ni ' Co、Sn、Pd、Sn-Cu等作 為主體的金屬被膜。此等金屬中,特佳可使用Cu、Au等。又, 構成電鐘層11之金屬若使用與構成金屬被膜9之金屬不同之 金屬種W由於在至屬被膜9與電鍍層u之間可得到高密接 性,故較佳。 於電路基板1巾’金心皮膜9係使金屬離子含浸於聚醯亞胺 先質樹脂中後予以還原而形成者。因此,藉由含浸所造成之錯 固效果’而於聚醯亞胺樹脂層7與金屬被膜9之間具有高密接 97134815 13 200920873 i1生又’電鑛層11係藉由介存著金屬層之金屬被膜9,而牢 固地固定於聚醯亞胺樹脂層7上。再者,聚醯亞胺樹脂層7係 、 將«亞胺先請脂塗佈於絕緣基材3上後料醯亞胺化而 成者,故對絕緣基材3具有高密接性。基於上述理由,本實施 形態之導體層之形成方法所應用的電路基板i,係即使將圖案 細微化亦不易發生剝離問題,具有高可靠性。 其次,參照圖3至圖9說明本發明第丨實施形態之導體層之 〇 形成方法。本實施形態中所形成之導體層,為經圖案化之導體 層。圖3為表示本實施形態之導體層之形成方法中主要步驟之 概要的流程圖。圖4至圖9為用於說明本實施形態之導體層之 形成方法之主要步驟的說明圖。 如圖3所示,本實施形態之導體層之形成方法,具備步驟 S1〜步驟S5作為主要步驟。 步驟si中,係將含有聚醯亞胺先質樹脂之塗佈液2〇,如圖 4所不般使用點膠機(dispenser)30依既定圖案塗佈至絕緣基 材3上’使其乾燥而形成塗佈膜4Q(塗佈膜形成步驟)。又, 圖4之符號40a,係指乾燥前之塗佈膜。於步驟&之塗佈膜 形成步财’形成於絕緣基材3上之轉膜4()之剖面形狀係 示於圖5。 本實施形態中’作為塗佈液20,係使用含有醯亞胺化前之 聚醯亞胺先質樹脂者。聚醯亞胺先質樹脂係具有容易含浸後述 金屬化合物溶液中所含之金屬離子的性質。塗佈液2〇所使用 97134815 14 200920873 之聚醯亞胺先質樹脂,係使用由與聚醯亞胺樹脂為相同單體成 分所得的聚醯胺酸,或於分子中含有感光性基(例如乙烯性不 飽和烴基)的聚醯胺酸。此種聚醯亞胺先質樹脂可藉由將公知 之二胺化合物與酸酐於溶媒存在下進行反應而予以製造。 於此,作為製造聚醯亞胺先質樹脂時所使用之二胺化合物, 可舉例如.4,4 _一胺基二苯基喊、2,-甲氧基-二胺 基苯曱醯苯胺、1,4-雙(4-胺基苯氧基)苯、丨,3_雙(4_胺基苯 氧基)苯、2, 2’ -雙[4-(4-胺基苯氧基)苯基]丙烷、2,2,—二 甲基-4,4’ -二胺基聯苯、3,3, 一二羥基_4,4, _二胺基聯苯、 4,4’ -二胺基苯甲醯苯胺等。 另外,作為上述以外之二胺化合物,可使用例如:2,2_雙 -[4-(3-胺基笨氧基)苯基]丙院、雙[4_(4_胺基苯氧基)苯基] 石風、雙[4-(3-胺基本氧基)苯基];5風、雙[4_(4_胺基苯氧基)] 聯笨、雙[4-(3-胺基苯氧基)]聯苯、雙[丨_(4_胺基苯氧基)] ,聯笨、雙[1-(3-胺基苯氧基)]聯苯、雙[4_(4_胺基苯氧基)苯 基]甲烷、雙[4-(3-胺基苯氧基)苯基]甲烷、雙[4一(4_胺基苯 氧基)苯基]醚、雙[4-(3-胺基苯氧基)苯基]醚、雙[4_(4_胺基 笨氧基)]二苯基酮、雙[4-(3-胺基苯氧基)]二苯基酮、雙 [4,4’ -(4-胺基苯氧基)]苯甲醯苯胺、雙[4,4,_(3_胺基苯氧 基)]苯甲醯苯胺、9, 9-雙[4-(4-胺基苯氧基)苯基]苐、9,9-雙[4-(3-胺基苯氧基)苯基]苐、2, 2-雙[4-(4-胺基苯氧基)苯 基]六氟丙烷、2,2-雙[4-(3-胺基苯氧基)苯基]六氟丙烷、 97134815 15 200920873 4, 4’ -亞甲基二-鄰曱苯胺、4, 4’ -亞曱基二-2, 6-二曱苯胺、 4, 4’ -亞曱基-2,6-二乙基笨胺、4, 4,-二胺基二苯基丙烷、 3, 3’ -二胺基二苯基丙烷、4, 4’ -二胺基二苯基乙烷、3, 3’ -二胺基二苯基乙烷、4, 4’ -二胺基二苯基曱烷、3,3,-二胺基 二苯基曱烷、4, 4’ -二胺基二苯基硫化物、3, 3,_二胺基二笨 基硫化物、4, 4’ -二胺基二苯基砜、3, 3,_二胺基二苯基碾、 4, 4’ -二胺基二苯基醚、3, 3,-二胺基二苯基醚、3, 4,-二胺 C 1 基二苯基醚、聯苯胺、3, 3’ -二胺基聯苯、3, 3,_二曱基 -4, 4 -一胺基聯苯、3, 3’ -二曱氧基聯苯胺、4, 4’’-二胺基對 聯二本' 3, 3 -二胺基對聯三苯、間苯二胺、對苯二胺、2,卜 二胺基吼啶、1,4-雙(4-胺基苯氧基)苯、;[,3-雙(4-胺基苯氧 基)苯、4, 4’ -[1,4-伸苯基雙(1-曱基亞乙基)]雙苯胺、 4,4 -[1,3-伸苯基雙(1_曱基亞乙基)]雙苯胺、雙(對胺基環 己基)甲烧、雙(對-点-胺基-第三丁基苯基)醚、雙(對一点一甲 〇 基一 5一胺基戊基)苯、對雙(2-曱基-4-胺基戊基)苯、對雙(丨, 一曱基-5-胺基戊基)苯、1,5-二胺基萘、2, 6-二胺基萘、2, 4-雙(/5-胺基-第三丁基)甲苯、2, 4_二胺基曱苯、間二曱苯一2, 二胺、對二甲苯-2, 5-二胺、間二甲苯二胺、對二曱苯二胺、 2, 6_二胺基吡啶、2, 5-二胺基吡啶、2, 5-二胺基-1,3, 4-噚二 哇、派啡等。 作為製造聚醯亞胺先質樹脂所使用之酸酐,可舉例如苯均四 酸酐3, 3 ,4, 4 -聯苯基四甲酸二酐、3,3’,4, 4’ -二笨基 97134815 16 200920873 颯四甲酸二針、4,4,-氧基二猶if。另外,作為上述以外之 酸酐’可舉例如:2,2,,3,3,-、2,3,3,,4,-或3,3, 4 4, 二苯基酮四曱酸二酐,2,3’,3,4,-聯笨基四甲酸二酐、 2’2’,3’3,—聯苯基四甲酸二酐、2,3,,3,4, _二苯基醚四曱 酸二酐、雙(2, 3-二羧基苯基)醚二酐等。又,亦可使用 3;3,,^4^4,,^2^3, 針2, 2雙(2, 3-或3, 4-一羧基苯基)丙烧二針、雙(2 3一戍 3,4-一竣基苯基)曱烧二針、雙(2,3_或3,4_二鲅基苯基)硬: 酐、1,1-雙(2, 3-或3, 4-二羧基苯基)乙烷二酐、l 2, 7, 8_、 I 2’ 6’ 7-或丨,2, 9, 10_菲_四甲酸二酐、2, 3, 6, 7_蒽四甲酸二 酐、2, 2-雙(3, 4-二羧基苯基)四氟丙烷二酐、2, 3, 5, 6_環己烷 二酐、2, 3, 6, 7-萘四曱酸二酐、1,2, 5, 6-萘四甲酸二酐、 1’ 4, 5, 8-萘四甲酸二酐、4, 8_二曱基2, 3, 5, 6, 7—六氫萘 一1,2, 5, 6-四甲酸二酐、2, 6—或2, 7—二氯萘一u 4, 5, 8一四曱酸 二酐、2, 3, 6, 7-(或 1,4, 5, 8-)四氯萘-i,4, 5, 8_(或 2, 3, 6, 7_) 四曱酸二酐、2,3,8,9-、3,4,9,10-、4,5,10,ll-或 芘四甲酸二酐、環戊烷-1, 2, 3, 4-四甲酸二酐、吡讲-2, 3, 5, 6— 四曱酸二酐、吡咯啶-2, 3, 4, 5-四曱酸二酐、噻吩_2, 3, 4, 5_ 四甲酸二if、4, 4’ -雙(2,3-二絲苯氧基)二苯基曱烧二肝 等。 上述二胺化合物及酸酐可分別僅使用丨種,亦可併用2種以 上。又,亦可於上述二胺化合物及酸酐中併用上述以外之二胺 97134815 17 200920873 化合物或_。此時’上述以外之:胺化合物或料之使用比 列可5又為9〇莫耳%以下、較佳50莫物下。於製找醯 先質樹脂時,藉由敎二概合滅騎之軸於 2上:ΓΓ化合物錢酐時之各自的莫耳比,财控制熱膨 脹性、接黏性、玻璃轉移點(Tg)等。 另外,二胺化合物與酸酐之反應,較佳係於有機溶媒中進 行。作為此種有機溶媒並無制限定,具體可舉例如二甲基亞 颯、N’N-一甲基甲酿胺、N,N_二甲基乙酿胺、甲基—2—吼嘻 疋酮/、甲基甲酿胺、苯驗、甲紛、7 _丁内酿等,此等可單 獨或混合制。X,作為雜有齡媒之使肖量並無特別限 制’藉聚合反應所得之雜亞胺先質·旨(⑽胺酸)溶液之濃 度最好調整為5〜3G重量%左右之範圍内而使用。經如此調整之 >谷液可直接利用作為塗佈液2〇。 聚醯亞胺先質樹脂較佳係以醯亞胺化後之聚酸亞胺樹脂層7 I έ有熱可塑性之聚醯亞胺樹脂之方式選定。藉由使用熱可塑性 之聚醯亞胺樹脂,可使醯亞胺化後之聚醯亞胺樹脂層7發揮作 為使絕緣基材3與金屬被膜9之密接性提高的接黏層之作用。 塗佈液20之黏度較佳係設為丨〇〜10〇,〇〇〇cps之範圍内之黏 度。塗佈液20之黏度未滿i〇cps時,於使用點膠機3〇進行塗 佈時,有難以控制目標線寬之虞。又,塗佈液2〇之黏度超過 100, OOOcps時,則有塗佈液20堵塞點膠機3〇之噴嘴,無法 塗佈於絕緣基材3上之虞。另外,可根據塗佈膜4〇之線寬, 97134815 18 200920873 調整塗佈液20之黏度。例如,在將塗佈膜40之線寬L設為 l〇em以上且100/zm以下之範圍内時,塗佈液2〇之黏度較佳 設為10〜100cps之範圍内。在將塗佈膜40之線寬l設為超過 100且200"m以下之範圍内時,塗佈液2〇之黏度較佳設 為100〜500cps之範圍内。在將塗佈膜40之線寬[設為超過 200/zm且300 "in以下之範圍内時,塗佈液2〇之黏度較佳設 為500〜50, OOOcps之範圍内。在將塗佈膜40之線寬l設為超 過300//m且400//m以下之範圍内時,塗佈液2〇之黏度較佳 設為50, 000〜70, 000之範圍内。在將塗佈膜4〇之線寬l設為 超過400μm且500//m以下之範圍内時,塗佈液2〇之黏度較 佳設為70, 000〜90, 000之範圍内。在將塗佈膜4〇之線寬L設 為超過500 //m且600 /zm以下之範圍内時,塗佈液2〇之黏度 較佳設為90, 000〜100, 000之範圍内。 作為塗佈液20之聚醯亞胺先質樹脂之黏度,可藉由控制聚 醯亞胺先質樹脂之分子量或聚醯亞胺先質樹脂溶液之固形分 濃度而予以調整。又,本實施形態中,由於塗佈液2〇含有金 屬化合物(金屬離子),故不需於塗佈液20中調配黏度調整 劑。因此’即使採用濕式還原法,亦不致發生因黏度調整劑之 作用而聚醯亞胺先質樹脂溶出並使還原效率降低的問題,可進 行有效率之還原處理。 另外,聚酿亞胺先質樹脂之重量平均分子量較佳為 10, 000〜300, 000之範圍内,更佳15, 000〜250, 000之範圍内, 97134815 19 200920873 再更佳30, 000〜200, 〇〇〇之範圍内。聚醯亞胺先質樹脂之重量 平均分子量未滿10, 000時,有藉其後之醯亞胺化而形成之聚 醯亞胺樹脂變脆之虞。另一方面,若聚醯亞胺先質樹脂之重量 平均分子量超過300,000,則作為塗佈液2〇之聚醯亞胺先質 樹月曰洛液之黏度變得過高而難以操作。又,聚醯亞胺先質樹脂 溶液之固形分濃度較佳係設為5~30重量%之範圍内。 於塗佈液20中,作為上述必須成分以外之任意成分,可調 配例如均平劑、消泡劑、密接性賦予劑、交聯劑等。 塗佈液20例如可藉由將聚醯亞胺先質樹脂及上述任意成 分,於任意之溶媒(例如吡啶系溶媒、咪唑系溶液等)之中進行 混合而調製。又,本實施形態中,可使用含有聚醯胺酸之聚醯 胺酸清漆作為塗佈液2〇(聚醯亞胺先質樹脂溶液)。作為聚醯 胺酸清漆,可糊㈣日齡學股份有限公^製讀可塑性聚 醯亞胺清漆SPI-200N(商品名)、同上之SPI_3〇〇N(商品名)、 同上之SPI-l〇〇〇G(商品名)、東麗股份有限公司製之 TORAYNEACE#3000(商品名)等。 於步驟si之塗佈膜形成步驟中,作為吐出塗佈液2〇之點膠 機30,可利用已知之構成者。市售品中,可使用例如⑽酬 m商品^索尼股份有限公司製)。藉由使用點膠機3〇,即 使對於例如凹凸面或曲㈣之立體面亦可直接依既定塗案塗The metal film 9 formed by the polyimide resin layer 7 and the plating layer 11 formed to cover the metal film 9 are formed. The polyimide film 7 and the metal film 9 and the plating layer 11 are patterned into a predetermined shape. Further, the plating layer η may not be provided. In the present embodiment, only the metal film 9, or the metal film 9 and the plating layer U are regarded as "patterned conductor layer 5". Further, the patterned conductor layer 5 may have any layer other than the above layers. The polyimine resin layer 7 is mainly composed of a polyamidene resin which is heated by a polyamide amine 97138815 12 200920873 acid which is a poly-bromide precursor resin and subjected to dehydration/cyclization reaction. By. The polyimide resin is more suitable for use as a thermosetting resin such as an epoxy resin, a phenol resin or an acrylic resin than the other resins because of its excellent heat resistance and dimensional stability. The polyimide resin layer 7 in the present embodiment is obtained by pattern-coating a coating liquid containing a polyimide pigment precursor resin on an insulating base material 3, and then polymerizing the polyimide polyimide precursor. Formed by the formation. Therefore, the polyimide film 7 has high adhesion to the insulating base material 3. Such a polyimide resin layer 7 is interposed between the insulating base material 3 and the metal film 9, and functions as a binder. The metal film 9 is a film made of a metal which is precipitated by a metal ion which is impregnated with a polyimide resin (the yttrium imide resin layer 7) The metal on the surface of the imine resin. The metal constituting the metal film 9 is a metal having a standard electrode potential of from 〇25 to +1.55 as described later. . The plating layer 11 is a metal film mainly composed of, for example, Cu, Au, Ni'Co, Sn, Pd, Sn-Cu or the like. Among these metals, Cu, Au, etc. can be used particularly. Further, it is preferable that the metal constituting the electric clock layer 11 is made of a metal species W different from the metal constituting the metal film 9 because high adhesion can be obtained between the coating film 9 and the plating layer u. On the circuit board 1 , the gold film 9 is formed by impregnating metal ions with a polyimide resin and then reducing it. Therefore, there is a high adhesion between the polyimide film 7 and the metal film 9 by the erroneous effect caused by the impregnation, and the metal layer 11 is formed by the metal layer of the metal layer. The film 9 is firmly fixed to the polyimide film 7 . Further, the polyimine resin layer 7 is formed by coating the imide first on the insulating base material 3, and then the imide is imidized, so that the insulating base material 3 has high adhesion. For the reason described above, the circuit board i to which the method for forming a conductor layer of the present embodiment is applied is less likely to cause peeling even if the pattern is made fine, and has high reliability. Next, a method of forming a conductor layer according to a third embodiment of the present invention will be described with reference to Figs. 3 to 9 . The conductor layer formed in this embodiment is a patterned conductor layer. Fig. 3 is a flow chart showing an outline of main steps in a method of forming a conductor layer according to the embodiment. 4 to 9 are explanatory views for explaining main steps of a method of forming a conductor layer according to the embodiment. As shown in Fig. 3, the method of forming the conductor layer of the present embodiment includes steps S1 to S5 as main steps. In the step si, the coating liquid containing the polyimine precursor resin is applied to the insulating substrate 3 in a predetermined pattern as shown in FIG. The coating film 4Q is formed (coating film forming step). Further, reference numeral 40a in Fig. 4 denotes a coating film before drying. The coating film formed in the step & the cross-sectional shape of the transfer film 4 () formed on the insulating substrate 3 is shown in Fig. 5. In the present embodiment, as the coating liquid 20, a polyimine precursor resin before the imidization is used. The polyimine precursor resin has a property of easily impregnating metal ions contained in a metal compound solution described later. The polyimine precursor resin used in the coating liquid is used as a polyacrylamide resin obtained by using the same monomer component as the polyimine resin or containing a photosensitive group in the molecule (for example, Polyethylenic acid of the ethylenically unsaturated hydrocarbon group. Such a polyiminoimine precursor resin can be produced by reacting a known diamine compound with an acid anhydride in the presence of a solvent. Here, as the diamine compound used in the production of the polyimine precursor resin, for example, 4,4-monoaminodiphenyl, 2,-methoxy-diaminophenylanilide may be mentioned. , 1,4-bis(4-aminophenoxy)benzene, anthracene, 3-bis(4-aminophenoxy)benzene, 2, 2'-bis[4-(4-aminophenoxy) Phenyl]propane, 2,2,-dimethyl-4,4'-diaminobiphenyl, 3,3, monodihydroxy-4,4,diaminobiphenyl, 4,4' - Diaminobenzimidil and the like. Further, as the diamine compound other than the above, for example, 2,2-bis-[4-(3-aminophenyloxy)phenyl]propane, bis[4_(4-aminophenoxy) can be used. Phenyl] stone, bis[4-(3-amine basic oxy)phenyl]; 5 wind, bis[4_(4-aminophenoxy)] phenyl, bis[4-(3-amino) Phenoxy)]biphenyl, bis[丨_(4-aminophenoxy)], phenyl, bis[1-(3-aminophenoxy)]biphenyl, bis[4_(4-amine) Phenoxy)phenyl]methane, bis[4-(3-aminophenoxy)phenyl]methane, bis[4-(4-aminophenoxy)phenyl]ether, bis[4- (3-Aminophenoxy)phenyl]ether, bis[4-(4-aminophenyloxy)]diphenyl ketone, bis[4-(3-aminophenoxy)]diphenyl ketone , bis[4,4'-(4-aminophenoxy)]benzamide, bis[4,4,-(3-aminophenoxy)]benzamide, 9, 9-double [4-(4-Aminophenoxy)phenyl]anthracene, 9,9-bis[4-(3-aminophenoxy)phenyl]anthracene, 2,2-bis[4-(4- Aminophenoxy)phenyl]hexafluoropropane, 2,2-bis[4-(3-aminophenoxy)phenyl]hexafluoropropane, 97134815 15 200920873 4, 4'-methylenedi- O-aniline, 4, 4'-arylene-2,6- Diphenylaniline, 4,4'-indenyl-2,6-diethylaminoamine, 4,4,-diaminodiphenylpropane, 3,3'-diaminodiphenylpropane, 4 , 4'-diaminodiphenylethane, 3,3'-diaminodiphenylethane, 4,4'-diaminodiphenylnonane, 3,3,-diaminodi Phenyl decane, 4, 4'-diaminodiphenyl sulfide, 3,3,-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfone, 3, 3, _Diaminodiphenyl milling, 4, 4'-diaminodiphenyl ether, 3,3,-diaminodiphenyl ether, 3,4,-diamine C 1 -diphenyl ether, Benzidine, 3,3'-diaminobiphenyl, 3,3,-dimercapto-4,4-aminobiphenyl, 3,3'-dimethoxyoxybenzidine, 4, 4'' -Diamine-based two '3,3-diamino-p-terphenyl, m-phenylenediamine, p-phenylenediamine, 2,diaminopyridinium, 1,4-bis(4-aminophenoxyl) Benzene, [,3-bis(4-aminophenoxy)benzene, 4,4'-[1,4-phenylphenylbis(1-indenylethylene)]diphenylamine, 4, 4-[1,3-phenylenebis(1-fluorenylethylene)]diphenylamine, bis(p-aminocyclohexyl)methyl, double ( -dot-amino-t-butylphenyl)ether, bis(p-monomethylamido-5-aminopentyl)benzene, p-bis(2-indolyl-4-aminopentyl)benzene , p-bis(indenyl, fluorenyl-5-aminopentyl)benzene, 1,5-diaminonaphthalene, 2,6-diaminonaphthalene, 2,4-bis(/5-amino-- Tributyl)toluene, 2,4-diaminoindenylbenzene, m-diphenylbenzene-2,diamine, p-xylene-2,5-diamine, m-xylylenediamine, p-diphenylene diamine, 2,6-diaminopyridine, 2,5-diaminopyridine, 2,5-diamino-1,3,4-anthracene, parnor, and the like. Examples of the acid anhydride used in the production of the polyimine precursor resin include pyromellitic anhydride 3,3,4,4-diphenyltetracarboxylic dianhydride, and 3,3',4,4'-diphenyl. 97134815 16 200920873 Two needles of ruthenium tetracarboxylic acid, 4,4,-oxyl sulphur. Further, as the acid anhydride other than the above, for example, 2, 2, 3, 3, -, 2, 3, 3, 4, or 3, 3, 4 4, diphenyl ketone tetraphthalic acid dianhydride may be mentioned. , 2,3',3,4,-biphenyltetracarboxylic dianhydride, 2'2',3'3,-biphenyltetracarboxylic dianhydride, 2,3,,3,4, _diphenyl Ether tetraruthenic dianhydride, bis(2,3-dicarboxyphenyl)ether dianhydride, and the like. Also, it is also possible to use 3;3,,^4^4,,^2^3, needle 2, 2 bis(2,3- or 3, 4-carboxyphenyl)-propanone two-needle, double (2 3 a 3,4-monodecylphenyl) fluorene two-needle, bis(2,3_ or 3,4-didecylphenyl) hard: anhydride, 1,1-bis (2, 3- or 3) , 4-dicarboxyphenyl)ethane dianhydride, l 2, 7, 8_, I 2' 6' 7- or hydrazine, 2, 9, 10 phenanthrene-tetracarboxylic dianhydride, 2, 3, 6, 7 _蒽tetracarboxylic dianhydride, 2,2-bis(3,4-dicarboxyphenyl)tetrafluoropropane dianhydride, 2, 3, 5, 6-cyclohexane dianhydride, 2, 3, 6, 7- Naphthalene tetraphthalic acid dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 1' 4,5, 8-naphthalenetetracarboxylic dianhydride, 4,8-dimercapto 2, 3, 5, 6, 7-hexahydronaphthalene-1,2,5,6-tetracarboxylic dianhydride, 2,6- or 2,7-dichloronaphthalene-u 4,5,8-tetradecanoic acid dianhydride, 2, 3, 6 , 7-(or 1,4, 5, 8-) tetrachloronaphthalene-i,4, 5, 8_(or 2, 3, 6, 7_) tetradecanoic dianhydride, 2,3,8,9-, 3,4,9,10-,4,5,10,ll- or perylenetetracarboxylic dianhydride, cyclopentane-1, 2,3,4-tetracarboxylic dianhydride, pyrex-2, 3, 5, 6-tetradecanoic acid dianhydride, pyrrolidine-2, 3, 4, 5-tetradecanoic acid dianhydride, thiophene-2, 3, 4, 5_ tetracarboxylic acid diif, 4, 4'-double (2, 3-dioxaphenoxy)diphenyl sulfonium dihydrogen and the like. The diamine compound and the acid anhydride may be used alone or in combination of two or more. Further, a diamine 97134815 17 200920873 compound or _ other than the above may be used in combination with the above diamine compound and acid anhydride. At this time, other than the above: the use ratio of the amine compound or the material is further less than 9 〇 mol%, preferably 50 mol%. When the system is used to find the bismuth resin, the enthalpy of the yoke is used to eliminate the rider's axis: the molar ratio of the oxime compound to the anhydride, the thermal expansion, the adhesion, and the glass transition point (Tg). Wait. Further, the reaction of the diamine compound with the acid anhydride is preferably carried out in an organic solvent. The organic solvent is not limited, and specific examples thereof include dimethyl hydrazine, N'N-methyl methamine, N, N dimethyl ethanoamine, and methyl 2- fluorenone. /, methyl amide, benzene, a, 7 _ butyl, etc., these can be used alone or in combination. X is not particularly limited as the amount of the mixed medium medium. The concentration of the heteroimine precursor obtained by the polymerization reaction is preferably adjusted to a range of about 5 to 3 G% by weight. use. The thus-regulated > trough liquid can be directly used as a coating liquid. The polyimine precursor resin is preferably selected in the form of a polyimine resin layer 7A having a thermoplasticity. By using the thermoplastic polyimide resin, the polyimide-imided resin layer 7 can be used as an adhesive layer which improves the adhesion between the insulating base material 3 and the metal film 9. The viscosity of the coating liquid 20 is preferably set to a viscosity in the range of 丨〇 10 〇 〇〇〇 cps. When the viscosity of the coating liquid 20 is less than i 〇 cps, it is difficult to control the target line width when coating with the dispenser 3 虞. When the viscosity of the coating liquid 2 exceeds 100, OOOcps, the coating liquid 20 blocks the nozzle of the dispenser 3 and cannot be applied to the insulating substrate 3. Further, the viscosity of the coating liquid 20 can be adjusted according to the line width of the coating film 4, 97134815 18 200920873. For example, when the line width L of the coating film 40 is in the range of l〇em or more and 100/zm or less, the viscosity of the coating liquid 2 is preferably in the range of 10 to 100 cps. When the line width l of the coating film 40 is set to be in the range of more than 100 and 200 " m or less, the viscosity of the coating liquid 2 is preferably in the range of 100 to 500 cps. When the line width of the coating film 40 is set to be more than 200/zm and 300 "in or less, the viscosity of the coating liquid 2 is preferably in the range of 500 to 50, OOOcps. When the line width l of the coating film 40 is in the range of more than 300 / / m and 400 / / m or less, the viscosity of the coating liquid 2 is preferably in the range of 50,000 to 70,000. When the line width l of the coating film 4 is in the range of more than 400 μm and 500//m or less, the viscosity of the coating liquid 2 is preferably in the range of 70,000 to 90,000. When the line width L of the coating film 4 is set to be more than 500 // m and 600 / zm or less, the viscosity of the coating liquid 2 is preferably in the range of 90,000 to 100,000. The viscosity of the polyimine precursor resin as the coating liquid 20 can be adjusted by controlling the molecular weight of the polyimine precursor resin or the solid content concentration of the polyimide precursor resin solution. Further, in the present embodiment, since the coating liquid 2 contains a metal compound (metal ion), it is not necessary to prepare a viscosity adjusting agent in the coating liquid 20. Therefore, even if the wet reduction method is employed, the problem that the polyiminoimine precursor resin is eluted by the action of the viscosity modifier and the reduction efficiency is lowered does not occur, and an efficient reduction treatment can be performed. In addition, the weight average molecular weight of the polyamidene precursor resin is preferably in the range of 10,000 to 300,000, more preferably in the range of 1,500 to 250,000, and 97134815 19 200920873 and more preferably 30,000 〜 200, within the scope of 〇〇〇. When the average molecular weight of the polyimine precursor resin is less than 10,000, the polyimine resin formed by subsequent imidization of the hydrazine becomes brittle. On the other hand, if the weight average molecular weight of the polyimine precursor resin exceeds 300,000, the viscosity of the polyimine precursor of the coating liquid is too high and it is difficult to handle. Further, the solid content concentration of the polyimine precursor resin solution is preferably in the range of 5 to 30% by weight. In the coating liquid 20, for example, a leveling agent, an antifoaming agent, an adhesion imparting agent, a crosslinking agent, or the like can be added as an optional component other than the above-mentioned essential components. The coating liquid 20 can be prepared, for example, by mixing a polyimine precursor resin and any of the above components in any solvent (for example, a pyridine solvent or an imidazole solution). Further, in the present embodiment, a polyamic acid varnish containing polyamic acid can be used as the coating liquid 2 (polyimine precursor resin solution). As a polyamic acid varnish, it can be paste (4) Days of age, limited shares, read plasticity, polyimine varnish SPI-200N (trade name), ibid. SPI_3〇〇N (trade name), ibid. SPI-l〇 〇〇G (trade name), TORAYNEACE #3000 (trade name) manufactured by Toray Industries, Inc., etc. In the coating film forming step of the step si, as the dispenser 30 for discharging the coating liquid 2, a known constituent can be used. For the commercial product, for example, (10) remuneration product ^Sonic Co., Ltd.) can be used. By using a dispenser 3, even a three-dimensional surface such as a concave-convex surface or a curved surface can be directly coated with a predetermined coating.

佈塗佈液20。因此,不僅止於習知之二維(平面)電路形成, 亦可形成3維(立體)之電路。 V 97134815 20 200920873 於形成塗佈膜40時,圖案狀之塗佈膜4〇之線寬L較佳為 l〇~400//m之範圍内,更佳15〜2〇〇//111之範圍内。又,以點膠 ·- 機所形成之塗佈膜40之線寬L·,係藉由聚醯亞胺先質樹脂溶 ' 液之黏度調整、喷嘴(吐出口)徑之控制、吐出壓力之控制、描 繪速度之控制或此等之組合,而可調節目標尺寸。本實施形態 中’如上述般,藉由將塗佈液20之黏度設為1〇〜1〇〇, 〇〇〇cps 之範圍内,可防止點膠機30之吐出喷嘴30a之堵塞,並可依 (' 所需線寬形成細微圖案。 於步驟S1之塗佈膜形成步驟中,將塗佈液2〇吐出至絕緣基 材3上後,使其乾燥而形成塗佈膜4〇。乾燥係將吐出至絕緣 基材3之塗佈液20於較佳5(M50°C之範圍内、更佳80〜140 。(:之範圍内、再更佳i〇〇~i2(Tc之範圍内,進行加熱3〜1〇分 鐘左右的時間。此時,若加熱溫度超過150〇c,則由於聚醯亞 胺先質樹脂之醯亞胺化進展,於其次所進行之含浸步驟(步驟 〇 S2)中難以使金屬離子含浸,故最好於上述範圍内之溫度 乾燥。 其次’於步驟S2中將具有塗佈膜40之絕緣基材3,藉由含 有金屬化合物之溶液(以下稱為「金屬化合物溶液」)進行處 理,而使金屬化合物》谷液中之金屬離子含浸於塗佈膜中(含 浸步驟)。於此步驟S2之含浸步驟中,係如圖6所示,形成使 金屬離子含浸於自塗佈膜40表面至某程度深度之表層部分的 含浸層41。於此含浸步驟中,作為金屬化合物,可使用含有 97134815 21 200920873 3払準電極電位為—〇·25至+丨·55範圍内之金屬的金屬化合 物、-及與上述金屬之離子間的錯合反應之平衡常數為6以下之 各氮化合物,曰^ Λ 马9至12範圍内的導體層形成用組成物。 本實施形態中,祐田, λ 使用上述導體層形成用組成物的理由如以Cloth coating solution 20. Therefore, not only the conventional two-dimensional (planar) circuit formation but also a three-dimensional (stereo) circuit can be formed. V 97134815 20 200920873 When the coating film 40 is formed, the line width L of the pattern-like coating film 4 is preferably in the range of l〇~400//m, more preferably in the range of 15~2〇〇//111. Inside. Further, the line width L· of the coating film 40 formed by the dispensing machine is adjusted by the viscosity of the solution of the polyimide resin, the nozzle (discharge) diameter, and the discharge pressure. Control, depiction of speed control or a combination of these, and the target size can be adjusted. In the present embodiment, as described above, by setting the viscosity of the coating liquid 20 to 1 〇 to 1 〇〇, within the range of 〇〇〇cps, clogging of the discharge nozzle 30a of the dispenser 30 can be prevented, and In the coating film forming step of the step S1, the coating liquid 2 is discharged onto the insulating base material 3, and then dried to form a coating film 4〇. The coating liquid 20 discharged to the insulating substrate 3 is preferably in the range of 5 (M50 ° C, more preferably 80 to 140) (in the range of (wherein, more preferably i〇〇~i2 (Tc), The heating is carried out for a period of about 3 to 1 minute. At this time, if the heating temperature exceeds 150 〇c, the immersion step of the polyimide-based precursor resin proceeds, followed by the impregnation step (step 〇S2). It is difficult to impregnate the metal ions, and it is preferable to dry at a temperature within the above range. Next, the insulating substrate 3 having the coating film 40 is subjected to a solution containing a metal compound (hereinafter referred to as "metal compound" in the step S2. The solution") is treated to impregnate the metal ions in the metal compound in the coating film ( In the impregnation step of step S2, as shown in FIG. 6, an impregnation layer 41 is formed which impregnates metal ions from the surface of the coating film 40 to a certain depth portion. In the impregnation step, As the metal compound, an equilibrium constant of a metal compound containing a metal having a range of 971 971 25 25 to + 丨 55 in a range of 971 348 971 25 至 至 至 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 25 6 6 6 6 6 6 6 In the present embodiment, the reason for using the conductor layer forming composition is the same as the composition for forming a conductor layer in the range of 9 to 12 in the present embodiment.

*由金屬離子之還原處理1^於聚ϋ亞胺先質樹脂表面形 成金屬被料,若可形料有某減以上贿㈣金屬被膜, 則可名略無電解鍍敷步驟。因此,重要的是使含浸於樹脂中(尤 其是表_近)的金屬離子量充分地多量,以及將還原處理時 之1離子之還原效率儘可能地增高。又,藉由使含浸於聚醯 亞胺先質樹脂表面之金屬離子之量增加,可藉_效果使聚醯 亞胺樹I層與導體層之間的雜性提升。在此種金屬離子對聚 -亞胺先質樹脂之含浸量增加與還原效率之提升之下,上述導 體層形成用組成物可發揮優越效果。 作為金屬化合物溶液之導體層形成驗錢中,標準電極電 位為-〇· 25至+1. 55範圍内之金屬可舉例如Ni、Sn、Pb、cu、 h A§ Pt、Au等。在金屬之標準電極電位未滿_〇 25時, 於後,之金屬被膜形成步驟中難㈣濕式還原法進行還法。 又,標準電極·储Nernest之式所求取之於25 中的標準餘餘。 灰 、上述至屬種類之中,於後述之電鍍步驟(步驟時,特佳 為具有作為核(種)之優越性能的Ni及Sn。 土 作為上述含有金屬種之金屬化合物,可使壯述金屬之鹽或 97134815 22 200920873 有機幾基錯合物等。作為金屬之鹽,可舉例如、硫㈣、 醋酸鹽、草酸、擰檬酸鹽等。在上述金屬為Cu、Ni時,最好 使用金屬鹽。作為此種金屬化合物之較佳具體例,可舉例如 Ni (CH3COO)2 > Cu(CH3C00)2 ^ NiS〇4 ^ CuS〇4, NlC〇3. ^ ^ NiCl2 ^ CuCh、NiBr2、CuBr2、Ni(N〇3)2、NiC2〇4、_^^^ η*Reducing by metal ions 1^ Forming a metal material on the surface of the polyimine precursor resin. If the shapeable material has a certain reduction or more (4) metal film, it may be a slightly electroless plating step. Therefore, it is important to sufficiently increase the amount of metal ions impregnated in the resin (especially in the vicinity) and to increase the reduction efficiency of the ions in the reduction treatment as much as possible. Further, by increasing the amount of metal ions impregnated on the surface of the polyimide precursor resin, the impurity between the polyimide layer I and the conductor layer can be improved by the effect. Under the increase in the impregnation amount of the metal ion-polyimine precursor resin and the reduction efficiency, the above-mentioned composition for forming a conductor layer can exert a superior effect. In the formation of the conductor layer of the metal compound solution, the metal having a standard electrode potential of from -25 to +1.55 may, for example, be Ni, Sn, Pb, cu, h A§ Pt, Au or the like. When the standard electrode potential of the metal is less than 〇 25, it is difficult to carry out the method of forming the metal film after the (four) wet reduction method. In addition, the standard electrode and the stored Nernest formula are obtained from the standard margin of 25. Among the above-mentioned genus types, in the plating step described later (in the case of step, it is particularly preferable to have Ni and Sn which are excellent properties as a core). As a metal compound containing the above metal species, the metal can be used as a metal compound. Salt or 97113815 22 200920873 organic group-based complex, etc. Examples of the metal salt include sulfur (tetra), acetate, oxalic acid, and citrate. When the metal is Cu or Ni, it is preferable to use a metal. Preferred examples of such a metal compound include Ni (CH3COO) 2 > Cu(CH3C00) 2 ^ NiS〇4 ^ CuS〇4, NlC〇3. ^ ^ NiCl2 ^ CuCh, NiBr2, CuBr2 , Ni(N〇3)2, NiC2〇4, _^^^ η

Cul ^ Cu(N〇3)2 ^ Ni(CH3C0CH2C0CH3)2 . Cu(CH3C0CH2C0CH3)2 # 〇 又’作為形成上述金屬與有_基錯合物的有機絲化合物, 可舉例如乙酿丙_、苯甲醯丙酮、二苯甲醯甲燒等之二嗣 類’乙醯醋酸乙酯等之酮羧酸酯等。 另外,於作為金屬化合物溶液之導體層形成驗成物中,與 上述金屬之離子間的錯合反應之平衡常數為G以下之含氮化 σ物’係生絲自金屬化合物之金屬離子與胺錯合物。如此所 生成之胺錯合物由於在其後步驟使金屬離子還科具有配位 基容易游離的性質,故認為可使金屬離子之還原反應順 打,發揮促進均勻之金屬被膜形成的作用。又,含氮化合物、 可發揮ΡΗ調整作用(緩衝作用)。本實施形態中,更佳 與上述金屬之離子_錯合反應之平衡常數為4以下 化合物。 3氣 。作為含氮化合物,較佳為氨或者!級或2級胺。更佳可為知 或者1、、及或2級之脂肪族胺。作為此種脂肪族胺之具體例‘、、,、可 舉:如乙醇胺、二乙醇胺、乙二胺、二乙基胺等。此等之中可 特佳係操作容易且轉性優越之氨。於此,所謂「錯合反應之 97134815 23 200920873 平衡#數」’係指由下式所定義之配位數1之錯合反應的平衡 常數心例如可作為坑鹽水溶液中之值而求取。 反應式M+il〜MLi 平衡常數@1=[ML] · [μ]-1 · [L]-1 (式中,Μ為金屬離子’L為配位基,[]表示莫耳濃度m。卜L—1) 吏/、上述金屬之離子間的錯合反應之平衡常數超過6 =作為3 IUt合物時’由導體層形成用組成物巾之金屬離子與 S氮化S物所形成之錯合離子’於聚酸亞胺先質删旨之末端竣 基之間進步形成錯合離子後’屬於配位基之含氮化合物變得 難以游離。結果可料,雜亞胺先質細旨表面之金屬離子之 還原里相對地減少。因此,於後述之金屬被膜形成步驟中,不 形成作為導體層之金屬被膜,或成為不足者。 導體層形成用組成物之pH係pH9至12範圍内。在pH脫離 上述範圍時’由於對聚醯亞胺先質樹脂之聚醢胺酸之化學構造 成影響,故不佳。導體層形成用組成物之pH可藉由上述含氮 化合物進行調整。 作為上述導體層形成用組成物中之金屬種類與含氮化合 物,較佳為例如使用Ni與氨、Ni與二乙醇胺、Sn與氨、Sn 與二乙醇胺、Ag與氨、Ag與二乙醇胺的組合,此等之中,最 佳為Ni與氨之組合。 於含浸步驟所使用之導體層形成用組成物中,較佳係依 ImM〜500mM之濃度範圍内調配金屬化合物。金屬化合物之調配 97134815 24 200920873 辰又未滿ImM日才,則過於耗費用於使金屬離子含浸至塗佈膜 40表層的時間’故不佳,超過圖禮時,由聚醯亞胺先質樹 脂所形成之塗佈膜4G表面發生脑(溶解),成為使圖案化導 體層5劣化的原因,故不佳。 另外‘體層形成用纟域物巾之上述含氮化合物與上述金屬 化口物之莫耳比(含氮化合物/金屬化合物),較佳設為2至12 範圍内若上述莫耳比未滿2或超過12,則難以進行金屬 〇化合物溶液之pH調整,且有金屬離子對聚醯亞胺先質樹脂中 之含浸量不足的情形。 文步驟中,藉金屬化合物對塗佈膜40之聚醯亞胺先質樹 月曰進行處理的方法並不拘,可舉例如將聚缝胺先質樹脂浸潰 於°亥’合液中之方法、將該溶液塗佈於聚醯亞胺先質樹脂之方法 等。本實施形態中,特佳係將上述濃度之金屬化合物溶液調整 為20〜40 C範圍内之溫度,於其浸潰形成有塗佈膜4〇之絕緣 ° 基材3的方法。此時,浸潰時間若為使金屬化合物溶液中之金 屬離子含浸於塗佈膜4〇之表層部分而可形成含浸層41的時間 即可,較佳為例如5分鐘〜5小時、更佳5分鐘〜2小時。在浸 /貝恰間紅於5分鐘時’金屬離子對塗佈膜4〇之含浸變得不足, 無法充分得到後述之錨固效果。另一方面,即使浸潰時間超過 小時,由於超過金屬離子對塗佈膜4〇之含浸程度,故無法 期待其以上之效果提升。 其-人,步驟S3中,係將塗佈膜4〇之含浸層41中之金屬離 97134815 25 200920873 子進仃還原處理㈣成金屬制9(金屬被膜駭步驟)。此步 ,S3之金屬被卿成步財之還核理之方法並無特別限 =可私用例如濕式還原法、氫還原法、紫外線照射還原法、 電子束照射法、加熱還原法、電性還原法等之方法。濕式還原 法係將形成有含浸層41之塗佈膜40浸潰於含有還·之溶液 (_劑溶液)巾而使金·子_的方法。料賴射還原法 係對形成有含浸層41之塗佈膜㈣㈣外線而使金屬離子還 ί原的方法。氫還原法係將形成有含浸層41之塗賴4q置於氮 環境中,使金屬離子還原的方法。此等還原處理手法中,較佳 係採用於金屬被膜形成步驟中之金屬被膜9之析出不均較 少、可依短時間形成均句金屬被膜之效果較大的濕式還原法。 尚且,如上述專利文獻2(日本專利特開裏_15侧號公 報)般’在含有姆子與聚酿亞胺先質樹脂之聚酿亞胺先質樹 月曰洛液中,於歸子與屬於聚醯亞胺先質樹脂之聚酿胺酸的分 Γ間發生3維交聯形成反應。因此,隨時間經過,聚醯亞胺先 二树脂溶液發生增黏、_化,_㈣佈絲邮胺基材。 2 了防止此種、凝膠化,於專利文獻2之技術中,係將低 :子有機化合物之乙酿丙鯛或乙醯醋酸乙g旨添加至聚酿亞胺 先質樹脂溶液中作為黏度穩定劑。然而,低分子有機化合物由 於對聚醯亞胺先質樹脂具有溶解作用,故有於濕式還原步驟中 聚醯亞胺先質職溶出域麵巾岐生還原效率降低 的問題。因此,使用調配了低分子有機化合物之聚醯亞胺先質 97134815 26 200920873 祕脂〉谷液的專利文獻2之方法中’無法採用還原效率佳之濕式 還原法’而藉紫外線照射法進行金屬離子之還原。相對於此, , 本實施形態之導體層之形成方法中’由於塗佈液20(聚醯亞胺 先質樹脂溶液)中不含金屬化合物,故無需添加低分子有機化 合物,可採用濕式還原。 作為於最佳還原方法之濕式還原法中所使用之還原劑,較佳 為例如氫化硼鈉、氫化硼鉀、二曱基胺硼烷等之硼化合物。此 () 等硼化合物可作成例如亞磷酸鈉、曱醛、肼類等之溶液(還原 劑溶液)而使用。還原劑溶液中之硼化合物之濃度,較佳為例 如〇. 005〜0· 5mol/L之範圍内。更佳為〇. 01〜〇 lm〇1/L之範圍 内。還原劑溶液中之硼化合物之濃度未滿〇 〇〇5m〇1/L時,有 塗佈膜40之含浸層41中所含之金屬離子的還原變得不足的情 形,若超過O.lmol/L·,則有因硼化合物之作用而使塗佈膜4〇 中之聚醯亞胺先質樹脂溶解的情形。 G 另外’還式還原處理巾’係將形成有塗佈膜40之絕緣基材 3 ’於1〇〜9(TC之範圍内、較佳5〇〜7叱之範圍内之溫度的還原 劑溶液中,浸潰20秒〜30分鐘、較佳3〇秒,分鐘、更佳i 分鐘〜5分鐘之時間。 藉以上之金屬被膜形成步驟,塗佈膜4〇表面之金屬離子被 還原而析出金屬,如圖7所示般,形成覆蓋塗佈膜40之金屬 被膜9。此金屬被膜9可作為其後所進行之電鍍的核,或者可 直接作為圖案化導體層5。 97134815 27 200920873 本實祕&之$體層之形成方法,可視需要將步驟% 浸步驟與步驟S3之金屬被·彡齡驟重覆騎複數次、例如 2〜10次左右、較佳2〜5次。藉此,金屬被膜9可成為更緻密 之厚膜’於後段之電鍍步驟中可確保充分的導通。 /、人於步驟S4中’將金屬被膜9作為核而實施電鍍,妒 成電鍍層11(電鍍步驟)。藉由電錢,如圖8所示,以覆蓋金 屬被膜9之方式形成讀層u。又,此步驟S4之錢步驟為 任意步驟。電鑛係例如可於含有硫酸、硫酸銅、鹽酸及光澤劑 [例如’市售品之日本MacDennid製之MacuSpec(商品名)等] 之組成的鍍敷液巾,將絕緣基材3之金屬被膜g作為陰極,將 Cu等金屬作為陽極而實施。電鍍時之電流密度較佳設為例如 卜3·5Α/ώη2之範圍内。又,作為電鍍之陽極,除了 Cu以外, 例如可使用Ni、Co等之金屬。 其次,於步驟S5中,將塗佈膜40中之聚醯亞胺先質樹脂進 行亞胺化(醯亞胺化步驟)。例如,藉熱處理將塗佈膜仙中 之聚醯胺酸進行脫水•環化而進行醯亞胺化,藉此如圖9般形 成與絕緣基材3之密接性優越的聚醯亞胺樹脂層7。熱處理所 進行之醯亞胺化係使用可將塗佈膜40加熱至所需溫度的熱處 理裝置’較佳可於氮專之惰性氣體環境中進行。熱處理可例如 於150〜40(TC之範圍内之溫度條件進行卜60分鐘。熱處理溫 度未滿15(TC時,無法充分進行醯亞胺化,又,熱處理溫度超 過400°C時,有發生聚醯亞胺樹脂之熱分解之虞。 97134815 28 200920873 如上述般,可製造於絕緣基材3表面形成有成為金屬佈線之 圖案化導體層5的電路基板1。此電路基板1係適合使用於硬 質印刷基板、可撓性印刷基板、TABCTape Automated Bonding, - 帶狀自動化黏合)材料或CSP(Chip Size Package,晶片尺寸 封裝)材料、C0G(Chip on Glass,覆晶玻璃基板)材料等之用 途。 本實施形態中’係具備下述步驟之構成:使用不含金屬化合 (s 物之塗佈液20形成塗佈膜40之塗佈膜形成步驟(步驟si); 將具有塗佈膜40之絕緣基材3藉金屬化合物溶液進行處理而 於塗佈膜40表層形成含浸層41的含浸步驟(步驟S2);與將 含浸量41所含之金屬離子進行還原處理而形成金屬被膜9之 金屬被膜形成步驟(S3)。藉由如此使用不含金屬化合物之塗佈 液20,由於不產生塗佈液2〇之黏度上升的問題,故塗佈液2〇 之操作容易。亦即,本實施形態所使用之塗佈液2〇中,由於 〇 不含金屬化合物,故不致發生起因於金屬離子與聚醯胺酸之交 聯形成的增黏•凝膠化問題。從而,即使於塗佈液20之塗布 時使用點膠機30,亦不易發生喷嘴之堵塞,塗佈容易。又, 由於不需於塗佈液20中調配黏度調整劑,故即使採用金屬離 子之還原處理效率佳之濕式還原法,亦無需擔心黏度調整劑所 造成之^^酿亞胺先質樹脂之溶出問題。 另外’構成塗佈膜40之聚醯亞胺先質樹脂,除了具有使金 屬離子容易含浸之性質以外,使用含有含標準電極電位為 97134815 29 200920873 ί -0. 25至+1. 55範圍内之金屬的金屬化合物、及與上述金屬之 離子間的錯合反應之平衡常數為6以下之含氮化合物,且ρΗ 為9至12範圍内的金屬化合物溶液(導體層形成用組成物)作 為含浸步驟所使用的金屬化合物溶液,藉此可使對於塗佈膜 40之金屬離子含浸量大幅增加。因此,極容易形成金屬被膜 9。亦即,於絕緣基材3上形成塗佈膜40後,藉由進行上述金 屬化合物溶液之處理(浸潰處理等)及還原處理,則可容易地於 塗佈膜40表面依充分厚度形成緻密之金屬被膜9,即使不進 行無電解鍍敷或陽離子交換基之導入,仍可充分達到電性導 通。此金屬被膜9可作為其後所進行之電鍍之核(種),或可直 接作為圖案化導體層5。因此,本實施形態之圖案化導體層之 形成方法中’可不需要習知技術中必要之無電解鍍敷步驟,不 致發生鍍敷液管理或廢液處理之問題,而形成圖案化導體層& 另外’本實滅>‘4中’由於將含有聚醯亞胺先質樹脂之塗佈 液20塗佈於絕緣基材3上而作成塗佈膜4〇後再進行酿亞胺化 而形成聚醯亞胺樹脂層7,故於絕緣基材3與聚酿亞胺樹脂層 7之間得到高密接性。又,於由聚醯亞胺先質樹賴形成之塗 佈膜40中含浸金屬離子德逸4 日 後進仃遇原而仔之金屬被膜9,係對 聚醯亞胺樹脂層7具有錯固效果藉 又禾稭此錨固效果,可提高聚醯 =層7與金屬被膜9之密接性。而且,藉由使用上述導 成物作為含浸步财所使用之金屬化合物溶 液,可大幅增加金屬離子對塗佈膜4〇之含浸量,並進一步增 97134815 30 200920873 大上述_效果,而使聚醯亞胺樹脂層7與金屬被削之 性更加牢固。 & 另外,本實施形態所使用之聚醯亞胺樹脂,係相較於其他合 成樹脂之下容易控制分子配向,故可將聚醯亞胺樹脂層7之熱 線膨脹係數抑制為較低’可使構成作為佈線之金屬被膜9及電 鍍層11之金屬的熱線膨脹係數接近。由以上事實,本實施型 悲中可形成與絕緣基材3之密接性優越的圖案化導體層5。 另外,本實施形態中,藉由使用點膠機3〇依既定圖案對絕 緣基材3直接塗佈塗佈液20,則於圖案化導體層5之形成過 程中,可省略光刻步驟或蝕刻步驟。再者,藉由於塗佈液2〇 之塗佈時使用點膠機30,即使是對例如絕緣基材3之凹凸面 或曲面等之立體面,仍可容易地形成圖案化導體層5。因此, 本實施形態中,可依較少步驟數,製造平板或立體之形狀的電 路基板1。 根據利用了本實施形態之導體層之形成方法的電路基板之 製造方法’可依高產率製造絕緣基材3與圖案化導體層5間之 密接性高、可靠性優越的電子零件。又,本實施形態中,由於 未使用含有導電性金屬微粒子之導電性金屬膏,故不需燒結步 驟’不易發生圖案化導體層5之導通不良。 [第2實施形態] 其次,參照圖10,說明本發明之第2實施形態。圖10為表 示本實施形態之導體層之形成方法的順序概要的流程圖。本實 97134815 31 200920873 滅/〜、之體層之形成方法,具備圖ι〇所示的步驟si卜步驟 S16之各步驟。本實施形態中,於相當於第丨實施形態之步驟 S1之塗佈膜形成步驟的步驟S12之塗佈膜形成步驟前,具備 -進行絕緣基材3之表面改質的步驟S11之表面處理步驟。又’ 本實施形態之步驟S12〜步驟S16之各步驟,由於與第i實施 形態之步驟S卜步驟S5之各步驟相同,故省略說明。 本實施形態中,於步驟S11之表面處理步驟中,較佳係配合 ('絕緣基材3之材質選擇表面改質之内容。在絕緣基材3為玻璃 基板、陶兗基板等般由無機材料所構成時,較佳係對絕緣基材 3之表面藉魏偶合劑進行表面處理。此時,表面處理例如可 將絕緣基材3浸潰於石夕烧偶合劑溶液中而進行。藉由石夕烧偶合 劑之表面處理,可使無機材料之絕緣基材3表面疏水化,抑制 塗佈了塗佈液20後之液體流動,並可抑制線寬擴展。又,藉 由石夕燒偶合劑之表面處理,亦可使塗佈膜4〇與絕緣基材^ C/密接性提升。因此,可維持由塗佈膜4〇所形成之圖案精度, 並可減少圖案化導體層5自絕緣基材3發生剝離的不良情形。 對絕緣基材3之表面處理較佳係以與水之接觸角為例如 2G〜11(Γ之範圍内而進行,更佳為3(M⑼。之範圍内而進行。 此時’與水之接觸角為未滿2〇。時,難以抑制塗佈了塗佈液2〇 後之液體流動,又,超過n〇。時,有使塗佈膜與絕緣基材 3之密接性降低之虞。 作為表面處理所使用之魏偶合劑,可舉例如:3胺基丙基 97134815 32 200920873 三乙氧基矽烷、3-胺基丙基三曱氧基矽烷、3-(2-胺基乙基) 胺基丙基三乙氧基矽烷、3-(2_胺基乙基)胺基丙基三曱氧基矽 烧、3-(2-胺基乙基)胺基丙基曱基二乙氧基矽烷、3-(2-胺基 乙基)胺基丙基曱基二曱氧基矽烷、3一三乙氧基矽烷基 -N-(l,3-二曱基-亞丁基)丙基胺、N—苯基_3_胺基丙基三曱氧 基石夕烧、N-(乙烯基苄基)—2-胺基乙基_3_胺基丙基三曱氧基矽 烷的鹽酸鹽,3-脲丙基三乙氧基矽烷、3_酼基丙基曱基二曱氧 基石夕烧、3-M基丙基三曱氧基矽烷、3_異氰酸酯丙基三乙氧基 矽烷、乙烯基三甲氧基矽烷、乙烯基三乙氧基矽烷、2_(3,4_ 環氧基環己基)乙基三曱氧基矽烷、3_環氧丙氧基丙基三甲氧 基矽烷、3-環氧丙氧基三乙氧基矽烷、對苯乙烯基三甲氧基矽 烧、3-甲基丙烯氧基丙基f基三f氧基魏、3_甲基丙稀氧基 丙基甲基二乙氧基魏、3—甲基丙烯氧基丙基三甲氧基石夕烧、 3-甲基丙烯氧基丙基三乙氧基魏、3_丙烯氧基丙基三乙氧基 矽烷等。 另外’在絕緣基材3為如聚醒亞胺基板、pET(聚對苯二曱酸 乙一酉曰)基板等般由合成樹脂材料所構成的情況,較佳係對絕 緣基材3表面藉電漿進行表面處理。藉由此電χ之表面處理, 可使、、,邑緣基材3之表面粗化,或改變表面之化學構造。因此, 可提升絕絲材3之表面测性,並提高佈㈣之親和 1·生於絲面上依既定形狀穩定地保持塗佈液2〇。因此,可 維持由塗佈膜40所形成之圖案精度。 97134815 33 200920873 作為電漿’侧如使用域壓方式之職處理裝置,於真空 处至内生成鼠、乳、氮或此等之混合氣體的電聚。此時之處 理壓力較佳係設為_〜2_〇Pa之範圍内,處理溫度為 i〇’°c之範圍内,高頻(或微波)輸出為5〇韻之範圍内。 尚且’在絕緣基材3之材質為聚酿亞胺樹脂時,作為使絕緣 基材40與絕緣基材3之密接性提升的手段,有效的是藉驗處 理使絕緣基材3表面之聚醯亞胺樹脂進行水解。於此,作為驗 f、可舉例如U〇H、K0H、隨等之驗金屬氫氧化物等,較佳可使 用選自Κ0Η或NaOH之1種以上。 如以上所述,藉由進行步驟S11之表面處理步驟,可抑制塗 佈了塗佈液20後之液體流動,並抑制線寬的擴展。又,藉由 表面處理,亦可提升塗佈膜4〇與絕緣基材3之密接性。因此, 可維持圖案化導體層5之圖案精度,並可減少起因於絕緣基材 3與聚醯亞胺樹脂層7之接黏力降低的圖案化導體層5之剝離 Ο 的不良發生。本實施形態之其他作用及效果,係與第1實施形 態相同。 [第3實施形態] 其次,參照圖11、圖12A及圖12B,說明本發明第3實施形 態。圖11為表示本實施形態之導體層之形成方法的順序概要 的流輕圖。本實施形態之導體層之形成方法,係具備圖11所 示之步驟S21〜步驟S25之各步驟。於第1實施形態之步驟S1 之塗佈膜形成步驟中,雖使用點膠機30塗佈塗佈液20,但於 97134815 34 200920873 本實施形態中’係在步驟S21之塗佈膜形成步驟中,使用吐出 微小液滴之液滴吐出裝置50。又,本實施形態之步驟S22〜步 驟S25之各步驟係與第1實施形態之步驟%〜步驟S5相同, - 故省略說明。 本實施形態中,如圖12A所示,係使用液滴吐出震置5〇將 塗佈液20依既定圖案塗佈於絕緣基材3上。液滴吐出裝置5〇 係具備可相對於絕緣基材3於χγ方向上進行相對移動的液滴 (ί 吐出喷頭52。此液滴吐出喷頭52係具備利用了喷墨印刷技術 之吐出機構(省略圖示),如圖12Β所示,向絕緣基材3以微小 液滴吐出塗佈液2〇。亦即’液滴吐出喷頭52係例如具備:多 數之細微喷嘴孔52a ;與該喷嘴孔52a連通,並構成為可藉壓 力元件(piezo-element)之收縮•伸長使内部容積增減的壓力 發生至(省略圖示)。而且,構成為利用來自未圖示之控制部之 電性驅動訊號使壓力元件驅動而改變壓力發生室之容積,利用 (: 此時所發生之内部壓力上升而自各喷嘴孔52a將塗佈液20作 成數皮升〜數微升左右的微小液滴而可朝絕緣基材3進行喷 射。又,作為液滴吐出喷頭52,亦可取代上述壓力方式而使 用熱方式者。 作為塗佈液20 ’可使用與第1實施形態之塗佈液2〇幾乎相 同的組成。其中,於使用液滴吐出裝置5〇時之塗佈液2〇之黏 度’較佳設為10〜20cps之範圍内。塗佈液20之黏度未滿i〇cps 時有難以控制目標線寬之虞。又,若塗佈液2〇之黏度超過 97134815 35 200920873 20cps ’則有於噴嘴孔52a内堵塞塗佈液20,無法塗佈之虞。 作為塗佈液20之聚醯亞胺先質樹脂溶液之黏度,係與第i實 施形態相同’可藉由控制聚醯亞胺先質樹脂之分子量或聚酿亞 胺先質樹脂溶液之固形分濃度而予以調整。本實施形態所使用 之聚酸亞胺先質樹脂之分子量、聚醯亞胺先質樹脂溶液之固形 分濃度、調製方法等,係與第1實施形態相同。 使用液滴吐出裝置50形成塗佈膜40時’圖案狀之塗佈膜 〇 40之線寬L較佳為10〜400/zm之範圍内,更佳為15〜2〇〇//m 之範圍内。又,利用液滴吐出裝置50之液滴吐出噴頭52所形 成之塗佈膜40的線寬L,係藉由聚醯亞胺先質樹脂溶液之黏 度調整、喷嘴(吐出口)徑之控制、吐出壓力之控制、描緣速度 之控制或此等的組合,而可調節為目標尺寸。 本實施形態中,如上述般藉由將塗佈液20之黏度設為 10〜20cps之範圍内’可防止液滴吐出裝置5〇之液滴吐出喷頭 ϋ 52之内部壓力發生室(省略圖示)或喷嘴孔52a中的堵塞,並 可依所需線寬形成細微圖案。 自液滴吐出噴頭52將塗佈液20吐出至絕緣基材3上後,使 其乾燥。乾燥可依與第1實施形態之步驟S1相同之條件而進 行。如此’可於絕緣基材3上依既定圖案形成塗佈膜4〇。 本實施形態之其他作用及效果係與第1實施形態相同。又, 於使用液滴吐出裝置50之本實施形態中,係與第2實施形態 相同’亦可於塗佈膜形成步驟之前設置表面處理步驟。 97134815 36 200920873 [第4實施形態] 其次,參照圖13至圖18,說明本發明第4實施形態之導體 層之开>成方法。首先,圖13為表示本發明實施形態之導體層 之形成方法所應用之導電性微粒子l〇Q之内部構造的剖面 圖。圖14為表示本實施形態之導體層之形成方法的主要步驟 概要流程圖。圖15至圖17為用於說明本實施形態之導體層形 成方法之主要步驟的說明圖。又,圖18為表示本實施形態之 導體層形成方法所應用之其他導電性微粒子2〇〇之内部構造 的剖面圖。 本實施形態之導體層之形成方法,係應用於導電性微粒子之 製造過程中。圖13所示之導電性微粒子1〇〇適合使用於例如 坏球等。又,圖18所示之導電性微粒子2〇〇適合使用於例如 用以將電子零件之電極或佈線基板等接合的導電性膏或導電 性接黏劑等。 如圖13所示般,導電性微粒子議係具備例如5/zm〜1〇〇〇 7左右之平均粒徑之球狀絕緣基材⑽、作為被覆此球狀絕 土材1〇3之聚醒亞胺樹脂膜的聚醢亞胺樹脂層105、與被覆 ^聚酿亞胺樹脂層1G5之導體層術。又,作為具備有聚酿亞 月女树知層1G5及導體層107之導電性微粒子1GG整體的粒後, ;成為核之球狀絕緣基材103之粒徑為任意,故可配合用途 自由地設定。 ' 作為球狀絕緣基材103,例如可使用玻璃、矽、陶瓷等之無 97134815 37 200920873 機微粒子,或聚醯亞胺樹脂、聚對苯二曱酸乙二酯(pET)等之 合成樹脂微粒子。 - 聚醯亞胺樹脂層105係以將屬於聚醯亞胺先質樹脂之聚醯 胺酸進行加熱並使其脫水·環化而經醯亞胺化的聚醯亞胺樹脂 為主體者。本實施形態之聚醯亞胺樹脂層105係於球狀絕緣基 材103上將含有聚醯亞胺先質樹脂之樹脂溶液進行塗敷後,使 聚醯亞胺先質樹脂醯亞胺化而形成者。因此,聚醯亞胺樹脂層 Ο 105係對球狀絕緣基材103具有高密接性。此種聚醯亞胺樹脂 層105係介存於球狀絕緣基材103與金屬被膜1〇9之間而發揮 黏結劑效果。由確保對球狀絕緣基材1〇3之高密接性、與確保 用於使金屬離子充分含浸所需的之聚醯亞胺先質樹脂之厚度 的觀點而言,聚醯亞胺樹脂層105之厚度較佳為例如〇 5# m〜50 /ζιη左右。 導體層107係具有與聚酿亞胺樹脂層1〇5鄰接之第1導體層 ti 之金屬被膜1〇9、與覆蓋該金屬被膜1〇9之第2導體層之電鑛 層111。又,亦可不設置電鍍層1Π。本實施形態中,僅將金 屬被膜109、或將金屬被膜109及電鍍層m分別視為「導體 層107」。又,導體層107除了上述各層以外亦可具有任意層。 由確保作為導體層之充分導電性的觀點而言,導體層i之厚 度較佳為50nm以上、更佳50nm〜100/zm左右。 金屬被膜109係藉由使含浸於聚醯亞胺先質樹脂之金屬離 子還原,而由析出至聚醯亞胺先質樹脂(藉醯亞胺化成為聚醯 97134815 38 200920873 亞胺樹脂層105)之表面的金屬所形成之被膜。作為構成金屬 被膜109之金屬,係與第丨實施形態之金屬被膜9相同,使用 - 標準電極電位為-0.25至+ 1.55範圍内之金屬。 - 構成電鍍層丨丨1之金屬種,係使用與第1實施形態之電鍍層 11相同之金屬種。 於導電性微粒子1〇〇中,金屬被膜1〇9係於將金屬離子含浸 於聚醯亞胺先質樹脂中後進行還原而形成者。因此,由於含浸 〇 之錨固效果而於聚醢亞胺樹脂層105與金屬被膜109之間具有 兩密接性。又,電鍍層11丨係藉由與聚醯亞胺樹脂層1〇5之間 介存金屬層之金屬被膜1〇9,而牢固地固定於聚醯亞胺樹脂層 105再者,聚亞胺樹脂層係將含聚龜亞胺先質樹脂之 樹脂溶液塗敷於球狀絕緣基材1〇3表面上後,進行醯亞胺化而 形成者,故對球狀絕緣基材103具有高密接性。由以上事實, 導體層之形成方法所應用之導電性微粒子1〇〇,不易發生導體 層107之剝離問題,具有高可靠性。 其次,說明本實施形態之導體層之形成方法。如圖14所示 般,本實施形態之導體層之形成方法係具備步驟S31〜步驟S35 之步驟作為主要步驟。 步驟S31中,係將含有聚醯亞胺先質樹脂之樹脂溶液塗敷於 球狀絕緣基材103之表面,使其乾燥而形成樹脂被膜12〇(樹 脂被膜形成步驟)。將被樹脂被膜12〇所被覆之球狀絕緣基材 103之剖面形狀示於圖15。作為本實施形態所使用之樹脂溶 97134815 39 200920873 夜可使用與第1只施形態相同者。將樹脂溶液塗佈於球狀絕 緣基材103 i之方法不拘,可採用例如將球狀絕緣基材103浸 潰於樹脂輯巾財法、對球狀絕緣基材1G3翁樹脂溶液之 方法等。又,樹脂溶液之乾燥係與第丨實施形態之步驟S1同 樣地進行。 其次,於步驟S32中,藉由將具有樹脂被膜12〇之球狀絕緣 基材103以金屬化合物溶液進行處理,而使金屬化合物溶液中 之金屬離子含浸至樹脂被膜12〇中(含浸步驟)。於此步驟 之含浸步驟中’係、如圖16所示,形成於樹脂賴12Q之表面 至某程度深度之表層部分中含浸有金屬離子的含浸層ΐ2ι。於 此含浸步驟巾,可制與第丨實施職_之導體層形成用組 成物作為金屬化合物溶液。又,使金屬化合物溶液中之金屬離 子含浸於樹脂被膜12〇之方法,亦可與第丨實施形態同樣地進 行。 其次,於步驟S33中,係將樹脂被膜12〇之含浸層121中之 金屬離子進行還原處理而形成金屬被膜丨〇9(金屬被膜形成+ 驟)。於此步驟中,係使樹脂被膜12〇表面之金屬離子還原而 析出金屬,如圖17所示般,形成覆蓋樹脂被膜120之金屬被 膜109。此步驟S33之金屬被膜形成步驟中之還原處理可與^第 1實施形態同樣地進行。此金屬被膜1〇9可作為其後進行之、 鍍的核,或可直接作為導體層107。 本實施形態之導體層之形成方法,視需要可將步驟S32 人"3 97134815 40 200920873 浸步驟、步驟S33之金屬被膜形成步驟重複進行複數次(例如 2 10人左右、較佳2〜5次左右)。藉此’金屬被膜1〇9可成為 更緻密之厚膜’於後段之钱步驟巾可確保充分的導通。 其後之步驟雖省略圖示,但視需要,於步驟咖中係以金屬 被膜作為核而實施電錢,形成電鑛層111(電鏟步驟)。再 者,步驟S35中’可將樹脂被膜12Q巾之聚酿亞胺先質樹脂進 行酿亞胺化而形成作為聚酿亞胺樹脂膜之聚醯亞胺樹脂層 105(1亞胺化步驟)。上述步驟S34之電錠步驟及步驟之 酿亞胺化步驟,可與第1實施雜同樣地進行。又,步驟S34 之電鑛步驟及步驟S35之醯亞胺化步驟為任意步驟。 士以上所述’可製造於覆蓋球狀絕緣基材⑽之雜亞胺樹 脂層1G5表面上形成有導體層1G7的導電性微粒子·參照 圖13)。此導電性微粒子1〇〇適合使用作為例可焊球、異向性 ^電性溥膜或異向性導電性膏用之導電性粒子等。 本實施形態中,構成樹脂被膜120之聚_胺先質樹脂係除 了具有使金屬離子料含浸的性質之外,藉由使用上述導體層 形成用組成物作為含浸步麟使狀金屬化合物溶液,可^ 屬離子對細_ 12G之含浸量大幅增加。因此,形成樹脂被 膜120、後’藉由進行上述金屬化合物溶液之處理(含浸步驟) 及金屬被膜形成步驟,則可於樹脂被膜12〇表面上 分厚度形賴叙金屬賴⑽,可充分達到f性導通。城 緻密形成之金屬被膜1G9,可作為其後進行之電鍍之核,或直 97134815 41 200920873 接作為導體層107’此’本實施形態之導體層之形成方法中, 不需要習知技術令必要之無電解鍍敷步驟,可不致發生鑛敷液 、 管理或廢液處理之問題。 - 另外’本實施形態巾,由於藉由含有聚醯亞胺先質樹脂之樹 脂溶液,於球狀絕緣基材1〇3上形成樹脂被膜丨加後進行醯亞 胺化而形成聚醯亞胺樹脂層1〇5,故於球狀絕緣基材1〇3與聚 醯亞胺樹脂層1G5之間得到高密接性4,使金屬離子含浸於 由聚醯亞胺先質樹脂卿成之__ 120 _舒以還原而 得的金屬被膜109 ’係對聚醯亞胺樹脂層ι〇5具有錨固效果。 藉由此錨固效果,可提高聚醯亞胺樹脂層105與金屬被膜1〇9 之密接性。而且,藉由使用上述導體層形成用組成物作為含浸 步驟中所使用之金屬化合物溶液,可大幅增加金屬離子對樹脂 被膜120之含浸量,並進一步增大上述錨固效果,而使聚醯亞 胺樹脂層105與金屬被膜1〇9之密接性更加牢固。 另外,本實施形態之導體層之形成方法,係例如圖18所示 般,亦可應用於將聚醯亞胺樹脂所形成之球狀聚醯亞胺樹脂基 材103a以導體層1〇7所被覆之構造的導電性微粒子2〇〇之製 造中。此時,圖14中除了不需要步驟S31之樹脂被膜形成步 驟以外,可依與步驟S32至步驟S35相同的順序形成導體層 107。亦即,準備欲使之成為球狀聚醯亞胺樹脂基材103a之球 狀聚醯亞胺先質樹脂粒子(省略圖示),將其表面直接以金屬化 合物溶液進行處理而形成含浸層後,進行還原處理、電鍍處 97134815 42 200920873 理、醯亞胺化處理等即可。 尚且’上述球狀聚醯亞胺先質樹脂粒子,係例如將含有Cul ^ Cu(N〇3) 2 ^ Ni(CH3C0CH2C0CH3)2 .  Cu(CH3C0CH2C0CH3)2# 〇和' as an organic silk compound which forms the above-mentioned metal and a ruthenium-based complex, and examples thereof include diterpenoids such as propylene, benzophenone, and benzophenone. A ketone carboxylate such as ethyl acetate or the like. Further, in the formation of the conductor layer as the metal compound solution, the equilibrium constant of the mismatch reaction with the ions of the metal is less than G, and the yttrium-containing sigma' is a metal ion from the metal compound and the amine is wrong. Compound. Since the amine complex thus formed has a property that the metal ion has a ligand which is easily freed in the subsequent step, it is considered that the reduction reaction of the metal ion can be smoothly performed to promote the formation of a uniform metal film. Further, the nitrogen-containing compound can exert a sputum adjustment action (buffering action). In the present embodiment, it is more preferable that the equilibrium constant of the ion-coincidence reaction with the metal is 4 or less. 3 gas. As the nitrogen-containing compound, it is preferably ammonia or! Grade or grade 2 amine. More preferably, it may be an aliphatic amine of 1, 1, and or 2. Specific examples of such an aliphatic amine include, for example, ethanolamine, diethanolamine, ethylenediamine, diethylamine, and the like. Among these, ammonia is easy to handle and has excellent transferability. Here, the "balanced reaction 97134815 23 200920873 balance # number" means that the equilibrium constant of the mismatch reaction of the coordination number 1 defined by the following formula can be obtained, for example, as a value in the pit salt aqueous solution. Reaction formula M+il~MLi Equilibrium constant @1=[ML] · [μ]-1 · [L]-1 (wherein, Μ is a metal ion 'L is a ligand, and [] represents a molar concentration m.卜 L-1) 吏 /, the equilibrium constant of the mismatch reaction between the ions of the above metals exceeds 6 = when the 3 IUt compound is formed, the metal ions of the composition layer for forming the conductor layer and the S-nitride S are formed. The nitrogen-containing compound belonging to the ligand becomes difficult to dissociate after the mismatched ion 'advances between the terminal sulfhydryl groups of the polyimine precursors to form a miscellaneous ion. As a result, it was expected that the reduction of the metal ions on the surface of the heteroimine precursor was relatively reduced. Therefore, in the metal film forming step to be described later, the metal film as the conductor layer is not formed or is insufficient. The pH of the composition for forming a conductor layer is in the range of pH 9 to 12. When the pH is out of the above range, it is not preferable because it affects the chemical structure of the polyaminic acid precursor polyamine. The pH of the conductor layer-forming composition can be adjusted by the above nitrogen-containing compound. The metal species and the nitrogen-containing compound in the conductor layer-forming composition are preferably, for example, a combination of Ni and ammonia, Ni and diethanolamine, Sn and ammonia, Sn and diethanolamine, Ag and ammonia, Ag and diethanolamine. Among these, the combination of Ni and ammonia is the best. In the conductor layer-forming composition used in the impregnation step, it is preferred to formulate a metal compound in a concentration range of from 1 mM to 500 mM. Metal compound blending 97138815 24 200920873 When it is less than 1 mM, it is too expensive to impregnate metal ions to the surface of coating film 40, which is not good. When it exceeds the ceremony, it consists of polyimine precursor resin. The surface of the formed coating film 4G is dissolved (dissolved), which causes deterioration of the patterned conductor layer 5, which is not preferable. Further, it is preferable that the molar ratio (nitrogen-containing compound/metal compound) of the nitrogen-containing compound and the metalized opening of the above-mentioned metal layer for the formation of the body layer is in the range of 2 to 12, and the above molar ratio is less than 2 Or more than 12, it is difficult to adjust the pH of the metal ruthenium compound solution, and there is a case where the metal ion is insufficient in the impregnation amount in the polyimide resin precursor resin. In the step of the present invention, the method of treating the polyimide film of the coating film 40 by the metal compound is not limited, and for example, a method of impregnating the polyether amine precursor resin in the mixture solution can be mentioned. A method of applying the solution to a polyimide precursor resin or the like. In the present embodiment, it is particularly preferable to adjust the metal compound solution having the above concentration to a temperature in the range of 20 to 40 C, and to impregnate the insulating base substrate 3 on which the coating film 4 is formed. In this case, the impregnation time may be such that the metal ions in the metal compound solution are impregnated into the surface layer portion of the coating film 4 to form the impregnation layer 41, preferably, for example, 5 minutes to 5 hours, more preferably 5 Minutes ~ 2 hours. When reddish between the immersion/bechazine for 5 minutes, the impregnation of the metal ion to the coating film 4〇 was insufficient, and the anchoring effect described later could not be sufficiently obtained. On the other hand, even if the impregnation time exceeds an hour, the degree of impregnation of the coating film 4 is exceeded by the metal ions, so that the above effects cannot be expected to be improved. In the case of the person S, in the step S3, the metal in the impregnation layer 41 of the coating film 4 is removed from the metal film by a metallurgical process. In this step, the method of the S3 metal is also not limited to the method of the Qing Dynasty. The wet reduction method, the hydrogen reduction method, the ultraviolet irradiation reduction method, the electron beam irradiation method, the heating reduction method, and the electricity are not used. Method such as sexual reduction method. The wet reduction method is a method in which the coating film 40 on which the impregnation layer 41 is formed is immersed in a solution containing a solution (a solution) to make a gold. The material reduction method is a method in which the coating film (4) (4) of the impregnation layer 41 is formed and the metal ions are regenerated. The hydrogen reduction method is a method in which a coating 4b having an impregnation layer 41 is formed in a nitrogen atmosphere to reduce metal ions. In the reduction treatment method, it is preferable to use a wet reduction method in which the metal coating film 9 in the metal film forming step has a small unevenness in precipitation and can form a uniform metal film in a short period of time. In addition, as described in the above-mentioned Patent Document 2 (Japanese Patent Laid-Open No. -15 No. 5), in the poly-branched imine tree saponin containing the precursor and the poly-bromide precursor resin, Yu Zizi A three-dimensional cross-linking reaction occurs between the splits of the poly-aracine which belongs to the polyimine precursor resin. Therefore, over time, the polyamidene first resin solution is viscosified, _, _ (four) cloth silk amine substrate. 2 In order to prevent such gelation, in the technique of Patent Document 2, a low: sub-organic compound of B-propene or Ethylacetate is added to the polyaniline precursor resin solution as a viscosity. stabilizer. However, since the low molecular organic compound has a dissolution effect on the polyimine precursor resin, there is a problem that the reduction efficiency of the polyimide in the wet reduction step is lowered. Therefore, in the method of Patent Document 2, which is formulated with a polymethyleneimine precursor of a low molecular organic compound, 9713815 26 200920873, a secret solution > a liquid solution, a metal ion can be used by ultraviolet irradiation. Restore. On the other hand, in the method for forming a conductor layer of the present embodiment, since the coating liquid 20 (polyimine precursor resin solution) does not contain a metal compound, it is not necessary to add a low molecular organic compound, and wet reduction can be employed. . The reducing agent used in the wet reduction method for the optimum reduction method is preferably a boron compound such as sodium borohydride, potassium borohydride or dinonylamine borane. The boron compound such as () can be used as a solution (reducing agent solution) such as sodium phosphite, furfural or hydrazine. The concentration of the boron compound in the reducing agent solution is preferably, for example, 〇.  005~0·5mol/L. Better for you.  01~〇 lm〇1/L. When the concentration of the boron compound in the reducing agent solution is less than 〇5m〇1/L, the reduction of the metal ions contained in the impregnation layer 41 of the coating film 40 becomes insufficient, and if it exceeds O. In the case of lmol/L·, the polyiminoimine precursor resin in the coating film 4 is dissolved by the action of the boron compound. Further, the 'reduction type treatment towel' is a reducing agent solution in which the insulating substrate 3' of the coating film 40 is formed at a temperature in the range of 1 Torr to 9 (the range of TC, preferably 5 Torr to 7 Torr). In the middle, the immersion is 20 seconds to 30 minutes, preferably 3 seconds, minutes, and more preferably 1 minute to 5 minutes. By the above metal film forming step, the metal ions on the surface of the coating film 4 are reduced to precipitate metal. As shown in Fig. 7, a metal film 9 covering the coating film 40 is formed. This metal film 9 can serve as a core for subsequent plating, or can be directly used as the patterned conductor layer 5. 97134815 27 200920873 For the formation method of the body layer of the &, the step % immersion step and the metal immersion of the step S3 may be repeated for a plurality of times, for example, 2 to 10 times, preferably 2 to 5 times, as needed. The film 9 can be made into a denser thick film. In the subsequent plating step, sufficient conduction can be ensured. / In the step S4, the metal film 9 is plated as a core to form a plating layer 11 (electroplating step). By means of electric money, as shown in FIG. 8, it is formed in such a manner as to cover the metal film 9. Further, the step of the step S4 is an arbitrary step. The electric ore system may be, for example, a sulfuric acid, a copper sulfate, a hydrochloric acid or a gloss agent [for example, a MacuSpec (trade name) manufactured by MacDennid, Japan, which is commercially available, etc. In the plating liquid towel of the composition, the metal film g of the insulating base material 3 is used as a cathode, and a metal such as Cu is used as an anode. The current density at the time of plating is preferably in the range of, for example, 3·5Α/ώη2. Further, as the anode for electroplating, for example, a metal such as Ni or Co may be used in addition to Cu. Next, in step S5, the polyimine precursor resin in the coating film 40 is imidized (imine) For example, the polyamine acid in the coating film is subjected to dehydration and cyclization by heat treatment to carry out hydrazine imidization, whereby a polymer having excellent adhesion to the insulating substrate 3 is formed as shown in FIG. The imine resin layer 7. The heat treatment by the heat treatment is carried out by using a heat treatment apparatus which can heat the coating film 40 to a desired temperature. Preferably, it can be carried out in an inert gas atmosphere of nitrogen. The heat treatment can be, for example, 150~ 40 (temperature conditions within the range of TC for 60 minutes When the heat treatment temperature is less than 15 (TC, the yttrium imidation cannot be sufficiently performed, and when the heat treatment temperature exceeds 400 ° C, the thermal decomposition of the polyimide resin occurs. 97134815 28 200920873 As described above, it can be produced as described above. A circuit board 1 which is a patterned conductor layer 5 of a metal wiring is formed on the surface of the insulating base 3. The circuit board 1 is suitable for use in a rigid printed circuit board, a flexible printed circuit board, and a TABCTape Automated Bonding material. Or a CSP (Chip Size Package) material, a COG (Chip on Glass) material, or the like. In the present embodiment, a configuration is adopted in which a coating film forming step (step si) in which a coating film 40 is formed without using a metal compound (the coating liquid 40 is formed); and the coating film 40 is insulated. The substrate 3 is treated by a metal compound solution to form an impregnation step of the impregnation layer 41 on the surface of the coating film 40 (step S2); and the metal film formed by reducing the metal ions contained in the impregnation amount 41 to form the metal film 9 is formed. In the step (S3), the use of the coating liquid 20 containing no metal compound does not cause a problem of an increase in the viscosity of the coating liquid 2, so that the operation of the coating liquid 2 is easy. In the coating liquid used, since ruthenium does not contain a metal compound, the problem of viscosity-increasing gelation due to crosslinking of metal ions and poly-proline is not caused. Thus, even in the coating liquid 20 When the dispenser 30 is used for coating, the clogging of the nozzle is less likely to occur, and the coating is easy. Further, since the viscosity adjusting agent is not required to be disposed in the coating liquid 20, the wet reduction method using a metal ion reduction treatment is excellent. No need to bear The problem of elution of the imine precursor resin caused by the viscosity adjusting agent of the heart. In addition, the polyimine precursor resin constituting the coating film 40 has a content containing a metal ion in addition to the property of easily impregnating the metal ion. The electrode potential is 97138815 29 200920873 ί -0.  25 to +1.  A metal compound solution (conductor layer forming composition) having a metal compound in a range of 55 and a nitrogen-containing compound having an equilibrium constant of 6 or less in a mismatch reaction with the ion of the metal, and having a pΗ of 9 to 12 As the metal compound solution used in the impregnation step, the amount of metal ion impregnation with respect to the coating film 40 can be greatly increased. Therefore, it is extremely easy to form the metal film 9. In other words, after the coating film 40 is formed on the insulating base material 3, the metal compound solution is treated (impregnation treatment or the like) and the reduction treatment, whereby the surface of the coating film 40 can be easily formed into a dense thickness with a sufficient thickness. The metal film 9 can sufficiently achieve electrical conduction even without electroless plating or introduction of a cation exchange group. This metal film 9 can serve as a core for electroplating which is subsequently performed, or can be directly used as the patterned conductor layer 5. Therefore, in the method of forming the patterned conductor layer of the present embodiment, the electroless plating step necessary in the prior art can be eliminated, and the problem of plating solution management or waste liquid treatment does not occur, and the patterned conductor layer & In addition, the present invention is prepared by applying a coating liquid 20 containing a polyimide precursor resin to an insulating substrate 3 to form a coating film 4, followed by being subjected to amination. Since the polyimide film 7 is formed, high adhesion is obtained between the insulating base material 3 and the polyimide resin layer 7. Further, in the coating film 40 formed of the polyimine precursor, the metal ion is impregnated for 4 days, and then the metal film 9 is formed, which has a staggering effect on the polyimide layer 7 . By the anchoring effect of the straw, the adhesion between the layer 7 and the metal film 9 can be improved. Moreover, by using the above-mentioned derivative as the metal compound solution used in the impregnation step, the impregnation amount of the metal ion to the coating film 4 大幅 can be greatly increased, and the above-mentioned effect can be further increased by 9713 135 30 200920873 The imide resin layer 7 is more strongly cut with the metal. Further, the polyimine resin used in the present embodiment can easily control the molecular alignment under other synthetic resins, so that the thermal linear expansion coefficient of the polyimide resin layer 7 can be suppressed to be lower. The coefficient of thermal linear expansion of the metal constituting the metal film 9 and the plating layer 11 as wirings is made close. From the above facts, in the present embodiment, the patterned conductor layer 5 excellent in adhesion to the insulating base material 3 can be formed. Further, in the present embodiment, by directly applying the coating liquid 20 to the insulating base material 3 by using the dispenser 3 in accordance with a predetermined pattern, the photolithography step or etching can be omitted during the formation of the patterned conductive layer 5. step. Further, by using the dispenser 30 during the application of the coating liquid 2, the patterned conductor layer 5 can be easily formed even for a three-dimensional surface such as an uneven surface or a curved surface of the insulating base material 3. Therefore, in the present embodiment, the circuit board 1 having a flat plate or a three-dimensional shape can be manufactured with a small number of steps. According to the method of manufacturing a circuit board using the method for forming a conductor layer of the present embodiment, an electronic component having high adhesion between the insulating base material 3 and the patterned conductor layer 5 and excellent reliability can be manufactured with high yield. Further, in the present embodiment, since the conductive metal paste containing the conductive metal fine particles is not used, the conduction failure of the patterned conductor layer 5 is less likely to occur without the need for the sintering step. [Second Embodiment] Next, a second embodiment of the present invention will be described with reference to Fig. 10 . Fig. 10 is a flow chart showing the outline of the procedure of the method of forming the conductor layer of the embodiment. The method for forming the body layer of the genus 97134815 31 200920873 is provided with the steps shown in FIG. In the present embodiment, the surface treatment step of the step S11 of performing the surface modification of the insulating base material 3 is performed before the coating film forming step of the step S12 corresponding to the coating film forming step of the step S1 of the second embodiment. . Further, the steps S12 to S16 of the present embodiment are the same as the steps of the step S5 of the i-th embodiment, and therefore the description thereof is omitted. In the present embodiment, in the surface treatment step of step S11, it is preferable to mix (the content of the material of the insulating base material 3 is selected to be modified. The insulating base material 3 is made of an inorganic material such as a glass substrate or a ceramic substrate. In the case of the structure, it is preferable to surface-treat the surface of the insulating base material 3 with a Wei coupling agent. In this case, the surface treatment can be carried out, for example, by impregnating the insulating base material 3 in the solution of the sulphur coupling agent. The surface treatment of the smouldering agent can hydrophobize the surface of the insulating substrate 3 of the inorganic material, suppress the liquid flow after the application of the coating liquid 20, and suppress the line width expansion. Further, by using the stone smelting coupling agent The surface treatment can also improve the adhesion between the coating film 4 and the insulating substrate. Therefore, the pattern precision formed by the coating film 4 can be maintained, and the patterned conductor layer 5 can be reduced from the insulating base. The surface of the insulating substrate 3 is preferably treated with a contact angle with water of, for example, 2 G to 11 (in the range of Γ, more preferably 3 (M (9)). At this time, the contact angle with water is less than 2 〇. When the flow of the liquid after the application of the coating liquid 2 is suppressed, and when it exceeds n 〇, the adhesion between the coating film and the insulating base material 3 is lowered. As the Wei coupling agent used for the surface treatment, For example: 3 aminopropyl 97138815 32 200920873 triethoxy decane, 3-aminopropyl trimethoxy decane, 3-(2-aminoethyl) aminopropyl triethoxy decane, 3 -(2_Aminoethyl)aminopropyltrimethoxy oxime, 3-(2-aminoethyl)aminopropyl decyl diethoxy decane, 3-(2-amino B Aminopropyl decyl decyloxydecane, 3-triethoxydecyl-N-(l,3-dimercapto-butylene)propylamine, N-phenyl-3-amino The hydrochloride salt of propyl tridecyl oxide, N-(vinylbenzyl)-2-aminoethyl-3-ylaminopropyltrimethoxy decane, 3-ureidopropyltriethoxy Decane, 3-mercaptopropyl decyl decyl oxalate, 3-M propyl propyl decyloxy decane, 3-isocyanate propyl triethoxy decane, vinyl trimethoxy decane, vinyl three Ethoxy decane, 2_(3,4-epoxycyclohexyl)ethyltrimethoxy decane, 3_epoxypropyl Oxypropyl propyl trimethoxy decane, 3-glycidoxy triethoxy decane, p-styryl trimethoxy oxime, 3-methyl propyloxypropyl f-group tri-f-oxy, 3 _Methylpropoxypropylmethyldiethoxywei, 3-methylpropoxypropyltrimethoxy zeoxime, 3-methylpropoxypropyltriethoxywei, 3-propylene In the case where the insulating base material 3 is made of a synthetic resin material, such as a polyamidide substrate or a pET (poly(ethylene terephthalate) substrate, etc., the oxypropyl triethoxy decane is used. Preferably, the surface of the insulating substrate 3 is surface-treated by a plasma, whereby the surface of the substrate 3 can be roughened by the surface treatment of the electrode, or the chemical structure of the surface can be changed. Therefore, the surface measurement of the swarf wire 3 can be improved, and the affinity of the cloth (4) can be improved. 1. The surface of the wire is stably held to maintain the coating liquid 2 依 according to the predetermined shape. Therefore, the pattern precision formed by the coating film 40 can be maintained. 97134815 33 200920873 As the plasma side, if using a field pressure treatment device, the mice, milk, nitrogen or a mixture of these gases are generated in a vacuum. The pressure at this time is preferably in the range of _~2_〇Pa, the processing temperature is in the range of i〇'°c, and the high-frequency (or microwave) output is in the range of 5〇. Further, when the material of the insulating base material 3 is a polyimide resin, as a means for improving the adhesion between the insulating base material 40 and the insulating base material 3, it is effective to subject the surface of the insulating base material 3 to aggregation. The imine resin is subjected to hydrolysis. Here, as the test f, for example, U 〇 H, K OH, and the like metal hydroxide, etc., it is preferable to use one or more selected from the group consisting of Κ0Η or NaOH. As described above, by performing the surface treatment step of the step S11, the flow of the liquid after the application of the coating liquid 20 can be suppressed, and the expansion of the line width can be suppressed. Further, by the surface treatment, the adhesion between the coating film 4 and the insulating base material 3 can be improved. Therefore, the pattern accuracy of the patterned conductor layer 5 can be maintained, and the occurrence of defects in the peeling of the patterned conductor layer 5 due to the decrease in the adhesion between the insulating base material 3 and the polyimide layer 7 can be reduced. The other actions and effects of the embodiment are the same as those of the first embodiment. [Third Embodiment] Next, a third embodiment of the present invention will be described with reference to Figs. 11, 12A and 12B. Fig. 11 is a flow chart showing an outline of a procedure for forming a conductor layer according to the embodiment. The method of forming the conductor layer of the present embodiment includes the steps S21 to S25 shown in Fig. 11. In the coating film forming step of the step S1 of the first embodiment, the coating liquid 20 is applied by the dispenser 30, but in the embodiment, in the coating film forming step of the step S21, in the embodiment of the invention. A droplet discharge device 50 that discharges minute droplets is used. The steps S22 to S25 of the present embodiment are the same as the steps % to S5 of the first embodiment, and the description thereof is omitted. In the present embodiment, as shown in Fig. 12A, the coating liquid 20 is applied onto the insulating base material 3 in a predetermined pattern by using a liquid droplet ejection. The droplet discharge device 5 includes droplets that can relatively move in the χγ direction with respect to the insulating base material 3 (the discharge nozzle 52 is provided. The droplet discharge nozzle 52 is provided with a discharge mechanism using an inkjet printing technique. (not shown), as shown in FIG. 12A, the coating liquid 2 is discharged to the insulating base material 3 by fine droplets. That is, the "droplet discharge head 52" includes, for example, a plurality of fine nozzle holes 52a; The nozzle hole 52a is connected to each other, and is configured to be capable of increasing or decreasing the internal volume by a contraction or elongation of a pressure element (piezo-element) (not shown), and is configured to use electricity from a control unit (not shown). The driving signal drives the pressure element to change the volume of the pressure generating chamber, and the coating liquid 20 is made into a small number of droplets of several microliters to several microliters from each nozzle hole 52a by the internal pressure rise occurring at this time. The liquid droplet ejection head 52 may be used as the liquid droplet ejection head 52. Instead of the above-described pressure method, a heat method may be used. As the coating liquid 20', the coating liquid of the first embodiment may be used. Almost the same composition In particular, the viscosity of the coating liquid 2 when the droplet discharge device 5 is used is preferably in the range of 10 to 20 cps. When the viscosity of the coating liquid 20 is less than i〇cps, it is difficult to control the target line width. Further, if the viscosity of the coating liquid 2超过 exceeds 97138815 35 200920873 20cps ', the coating liquid 20 is clogged in the nozzle hole 52a, and the coating liquid 20 cannot be coated. The polyimine precursor resin as the coating liquid 20 The viscosity of the solution is the same as that of the i-th embodiment. It can be adjusted by controlling the molecular weight of the polyimine precursor resin or the solid content concentration of the polyamidene precursor resin solution. The polyacid used in the present embodiment. The molecular weight of the imine precursor resin, the solid content concentration of the polyimide precursor resin solution, the preparation method, and the like are the same as in the first embodiment. When the coating film 40 is formed by the droplet discharge device 50, the pattern coating is applied. The line width L of the film stack 40 is preferably in the range of 10 to 400 / zm, more preferably in the range of 15 to 2 〇〇 / / m. Further, the droplet discharge nozzle 52 of the droplet discharge device 50 is used. The line width L of the formed coating film 40 is obtained by a polyimide resin precursor resin solution. The adjustment of the nozzle, the control of the nozzle (discharge) diameter, the control of the discharge pressure, the control of the stroke speed, or the like, can be adjusted to the target size. In the present embodiment, the coating liquid 20 is used as described above. The viscosity is set to be in the range of 10 to 20 cps, which prevents the liquid droplet ejection device 5 from being discharged from the internal pressure generating chamber (not shown) or the nozzle hole 52a. The line width is formed into a fine pattern. The coating liquid 20 is discharged from the liquid droplet discharging head 52 onto the insulating base material 3, and then dried. The drying can be carried out under the same conditions as in the step S1 of the first embodiment. The coating film 4 is formed on the insulating substrate 3 in a predetermined pattern. The other actions and effects of the embodiment are the same as those of the first embodiment. Further, in the present embodiment in which the droplet discharge device 50 is used, it is the same as in the second embodiment. It is also possible to provide a surface treatment step before the coating film forming step. [Fourth Embodiment] Next, a method of forming a conductor layer according to a fourth embodiment of the present invention will be described with reference to Figs. 13 to 18 . First, Fig. 13 is a cross-sectional view showing the internal structure of the conductive fine particles 10 应用 Q applied to the method for forming a conductor layer according to the embodiment of the present invention. Fig. 14 is a flow chart showing the main steps of a method of forming a conductor layer according to the embodiment. Figs. 15 to 17 are explanatory views for explaining main steps of the conductor layer forming method of the embodiment. Fig. 18 is a cross-sectional view showing the internal structure of another conductive fine particle 2〇〇 applied to the method for forming a conductor layer according to the present embodiment. The method of forming the conductor layer of the present embodiment is applied to the production process of conductive fine particles. The conductive fine particles 1 shown in Fig. 13 are suitably used for, for example, a bad ball or the like. Further, the conductive fine particles 2 shown in Fig. 18 are suitably used, for example, as a conductive paste or a conductive adhesive for bonding an electrode of an electronic component or a wiring board or the like. As shown in Fig. 13, the conductive fine particles have a spherical insulating base material (10) having an average particle diameter of, for example, about 5/zm to 1〇〇〇7, and a wake-up of the spherical solid material 1〇3. The polyimide film of the imide resin film 105 and the conductor layer of the coated polyimide resin layer 1G5. In addition, as a whole particle having the conductive fine particles 1GG of the polymerized layer 1G5 and the conductor layer 107, the particle size of the spherical insulating substrate 103 which is a core is arbitrary, and therefore, it can be used freely for use. set up. As the spherical insulating base material 103, for example, no fine particles of 97134815 37 200920873, or synthetic resin fine particles such as polyimine resin or polyethylene terephthalate (pET) can be used. . The polyimine resin layer 105 is mainly composed of a polyamidene resin obtained by heating and dehydrating and cyclizing a polyphosphonic acid which is a polyimine precursor resin. The polyimine resin layer 105 of the present embodiment is coated on a spherical insulating substrate 103 by coating a resin solution containing a polyimide precursor resin, and then iodizing the polyimine precursor resin. Former. Therefore, the polyimide layer Ο 105 has high adhesion to the spherical insulating substrate 103. The polyimide resin layer 105 is interposed between the spherical insulating substrate 103 and the metal film 1〇9 to exhibit a binder effect. The polyimine resin layer 105 is obtained from the viewpoint of ensuring high adhesion to the spherical insulating substrate 1〇3 and ensuring the thickness of the polyimide intermediate precursor resin required for sufficiently impregnating metal ions. The thickness is preferably, for example, about #5#m~50/ζιη. The conductor layer 107 has a metal film 1〇9 of the first conductor layer ti adjacent to the polyimide resin layer 1〇5, and an electric ore layer 111 covering the second conductor layer of the metal film 1〇9. Further, the plating layer 1Π may not be provided. In the present embodiment, only the metal film 109 or the metal film 109 and the plating layer m are regarded as "conductor layer 107". Further, the conductor layer 107 may have any layer in addition to the above layers. The thickness of the conductor layer i is preferably 50 nm or more, more preferably about 50 nm to 100/zm, from the viewpoint of ensuring sufficient conductivity of the conductor layer. The metal film 109 is precipitated to the polyimine precursor resin by reduction of the metal ion impregnated with the polyimide precursor resin (i-imidized into a polyfluorene 97138815 38 200920873 imine resin layer 105) The film formed by the metal on the surface. The metal constituting the metal film 109 is the same as the metal film 9 of the second embodiment, and the standard electrode potential is -0. 25 to + 1. Metal within the range of 55. - The metal species constituting the plating layer 丨丨1 is the same metal species as the plating layer 11 of the first embodiment. In the conductive fine particles, the metal film 1〇9 is formed by impregnating a metal ion with a polyimine precursor resin and then reducing it. Therefore, there is a close adhesion between the polyimide film 105 and the metal film 109 due to the anchoring effect of the impregnation. Further, the plating layer 11 is firmly fixed to the polyimide film layer 105 by interposing the metal film 1〇9 of the metal layer between the polyimide layer 1〇5 and the polyimide. In the resin layer, a resin solution containing a polyhimemine precursor resin is applied onto the surface of the spherical insulating substrate 1〇3, and then formed by hydrazine imidization, so that the spherical insulating substrate 103 has high adhesion. Sex. From the above facts, the conductive fine particles used in the method of forming the conductor layer are less likely to cause peeling of the conductor layer 107, and have high reliability. Next, a method of forming the conductor layer of the present embodiment will be described. As shown in Fig. 14, the method of forming the conductor layer of the present embodiment includes the steps of steps S31 to S35 as main steps. In the step S31, a resin solution containing a polyimine precursor resin is applied onto the surface of the spherical insulating substrate 103 and dried to form a resin film 12 (the resin film forming step). The cross-sectional shape of the spherical insulating base material 103 covered with the resin film 12A is shown in Fig. 15. As the resin used in the present embodiment, 97134815 39 200920873 can be used in the same manner as in the first embodiment. The method of applying the resin solution to the spherical insulating substrate 103 i is not limited, and for example, a method of impregnating the spherical insulating substrate 103 with a resin sheet, a method for the spherical insulating substrate 1G3 resin solution, or the like can be employed. Further, the drying of the resin solution is carried out in the same manner as in the step S1 of the first embodiment. Then, in step S32, the spherical insulating substrate 103 having the resin film 12 is treated with a metal compound solution to impregnate the metal ions in the metal compound solution into the resin film 12 (the impregnation step). In the impregnation step of this step, as shown in Fig. 16, a surface layer portion formed on the surface of the resin layer 12Q to a certain depth is impregnated with a metal ion impregnated layer ΐ2ι. Here, the impregnation step towel can be used as a metal compound solution for the conductor layer forming composition of the third embodiment. Further, the method of impregnating the metal film in the metal compound solution with the resin film 12 can be carried out in the same manner as in the third embodiment. Then, in step S33, the metal ions in the impregnation layer 121 of the resin film 12 are subjected to reduction treatment to form a metal film 丨〇9 (metal film formation + step). In this step, the metal ions on the surface of the resin film 12 are reduced to precipitate a metal, and as shown in Fig. 17, a metal film 109 covering the resin film 120 is formed. The reduction treatment in the metal film forming step of this step S33 can be carried out in the same manner as in the first embodiment. This metal film 1〇9 can be used as a core for subsequent plating, or can be directly used as the conductor layer 107. In the method for forming the conductor layer of the present embodiment, the step of forming the metal film in step S32 and the step of forming the metal film in step S33 may be repeated a plurality of times (for example, about 2 10 people, preferably 2 to 5 times). about). Thereby, the 'metal film 1 〇 9 can be made into a denser thick film' in the latter stage to ensure sufficient conduction. Although the steps are not shown in the drawings, if necessary, in the step coffee, the metal film is used as a core to carry out the electricity money, and the electric ore layer 111 is formed (the electric shovel step). Further, in the step S35, the polyimine resin layer 105 as a polyanilin resin film can be subjected to amination of the polyaniline precursor resin of the resin film 12Q (1 imidization step). . The steps of the electroplating step and the step of the imidization step of the above step S34 can be carried out in the same manner as in the first embodiment. Further, the electrowinning step of the step S34 and the hydrazine imidization step of the step S35 are arbitrary steps. As described above, the conductive fine particles in which the conductor layer 1G7 is formed on the surface of the hetero-imide resin layer 1G5 covering the spherical insulating substrate (10) can be produced (see Fig. 13). As the conductive fine particles, conductive particles for use as an example solderable ball, an anisotropic conductive film, or an anisotropic conductive paste are suitably used. In the present embodiment, the poly-amine precursor resin constituting the resin film 120 has a property of impregnating a metal ion material, and the composition for forming a conductor layer is used as an impregnation step metal compound solution. ^ The impregnation amount of the genus ion pair fine _ 12G is greatly increased. Therefore, the resin film 120 is formed, and after the metal compound solution is treated (the impregnation step) and the metal film forming step, the surface of the resin film 12 can be divided into a thickness to form a metal (10), which can sufficiently reach f. Sexual conduction. The metal film 1G9 formed by the dense formation of the city can be used as the core for subsequent electroplating, or the straight layer 97138815 41 200920873 is connected as the conductor layer 107'. In the method for forming the conductor layer of the present embodiment, the prior art is not required. The electroless plating step does not cause problems with ore deposits, management or waste disposal. - In the case of the present embodiment, a resin film containing a polyimide resin precursor resin is formed on the spherical insulating substrate 1〇3, and then a ruthenium is formed to form a polyimine. Since the resin layer is 1〇5, high adhesion 4 is obtained between the spherical insulating substrate 1〇3 and the polyimide resin layer 1G5, so that the metal ions are impregnated with the poly(imine) precursor resin. The metal film 109' obtained by the reduction has an anchoring effect on the polyimide layer ι〇5. By this anchoring effect, the adhesion between the polyimide film layer 105 and the metal film 1〇9 can be improved. Further, by using the above-described composition for forming a conductor layer as the metal compound solution used in the impregnation step, the impregnation amount of the metal ion to the resin film 120 can be greatly increased, and the above anchoring effect can be further increased to make the polyimine The adhesion between the resin layer 105 and the metal film 1〇9 is more secure. Further, the method for forming the conductor layer of the present embodiment can be applied to the spherical polyimide film base material 103a formed of the polyimide resin as the conductor layer 1 to 7 as shown in Fig. 18, for example. The conductive fine particles of the coated structure are manufactured. At this time, in Fig. 14, the conductor layer 107 may be formed in the same order as the step S32 to the step S35 except that the resin film forming step of the step S31 is not required. In other words, spheroidal polyimide precursor resin particles (not shown) which are to be formed into a spherical polyimine resin base material 103a are prepared, and the surface thereof is directly treated with a metal compound solution to form an impregnation layer. , the reduction treatment, electroplating, 97138815 42 200920873, yttrium imidization treatment, etc. can be. Further, the above spherical spheroidal polyimide precursor resin particles, for example, will contain

PMDA 等酸肝與0M等二胺化合之齡賴,储在4〇 °C前後之反應溫度,並進行超音波照射,藉此可容易形成。如 此形成之球狀聚醯亞胺先質樹脂粒子係平均粒徑為5〇而〜未滿 5,之微粒子。X,導體層107之厚度較佳為例如3〇簡〜2_ 左右。從而’使用球狀聚醯亞胺先質樹脂粒子而得之導電性微 粒子200 ’係平均粒徑為i〇〇nm以上且以下之超微粒子, 可適合使用於例如導電性膏、導電性接黏劑、喷墨用導電性油 墨等之用途。 本實施形態之其他作用及效果,係與第i實施形態相同。 又’本實施形態在步驟S31之樹脂被膜形成步驟之前,亦 可設置對球狀絕緣基材丨〇3進行與第2實施職之步驟su相 同之表面處理步驟。 其次,列舉實施例及比較例,進一步具體說明本發明,但本 發明並不受此等限制。又,以下實施例、比較例中,在未特別 限定之下,標準電極電位之測定及錯合反應之平衡常數的測定 係以下述方法進行。 [標準電極電位之測定] 組合標準氫電極與鎳電極,以1M硫酸鎳⑴)水溶液作為電 解質而作成電化學電池,於25。(:下測定兩極間之電位差。 以下實施例及比較例所記载之鎳值,係藉上述測定方法所算 97134815 43 200920873 出之值。又,銅及銀之值剌用自化學便覽基礎篇(改訂3版, 丸善出版社)。又’任—值均設為25ΐ水溶液中之標準電極 - 位。 喂 - [錯合反應之平衡常數的測定] 將前項之標準電極電位之測定所使用的電化學電池之電解 質作為1Μ硝酸銨水溶液,於25^下測定兩極間之電位差E〇c。 下式係自Naraest式所導出之、存在錯合離子時之標準電極電 (Ί 位E°c與錯合反應之平衡常數/3,的關係式。使用下式自電位差 之測定值算出錯合反應之平衡常數。 E°c=E°-RT/nF InySiThe acid liver such as PMDA is combined with a diamine such as 0M, and is stored at a reaction temperature of about 4 ° C and subjected to ultrasonic irradiation, whereby it can be easily formed. The spherical polyimine precursor resin particles thus formed have fine particles having an average particle diameter of 5 Å and less than 5 Å. X, the thickness of the conductor layer 107 is preferably, for example, about 3 〜 to 2_. Therefore, the conductive fine particles 200' obtained by using the spherical polyimine precursor resin particles are ultrafine particles having an average particle diameter of i 〇〇 nm or more and can be suitably used for, for example, a conductive paste or a conductive adhesive. Uses such as a solvent or a conductive ink for inkjet. The other actions and effects of the embodiment are the same as those of the i-th embodiment. Further, in the present embodiment, the spherical insulating substrate 3 may be provided with a surface treatment step similar to the step su of the second embodiment before the step of forming the resin film in the step S31. Next, the present invention will be specifically described by way of examples and comparative examples, but the present invention is not limited thereto. Further, in the following examples and comparative examples, the measurement of the standard electrode potential and the measurement of the equilibrium constant of the mismatch reaction were carried out by the following methods, without particular limitation. [Measurement of Standard Electrode Potential] A standard hydrogen electrode and a nickel electrode were combined, and an aqueous solution of 1 M nickel sulfate (1)) was used as an electrolyte to prepare an electrochemical cell. (The potential difference between the two poles is measured. The nickel values described in the following examples and comparative examples are the values calculated by the above-mentioned measurement method, 97138815 43 200920873. Further, the values of copper and silver are used in the basics of the chemical handbook. (Revised 3rd edition, Maruzen Press). The 'any-value is set to the standard electrode-position in the 25ΐ aqueous solution. Feeding-[Measurement of the equilibrium constant of the mismatch reaction] The standard electrode potential used in the measurement of the previous item is used. The electrolyte of the electrochemical cell is used as an aqueous solution of ammonium nitrate, and the potential difference E〇c between the two electrodes is measured at 25 °. The following formula is derived from the Naraest formula and the standard electrode current (the position E °c and the presence of the wrong ion) The relational constant of the equilibrium constant of the mismatch reaction / 3. The equilibrium constant of the erroneous reaction is calculated from the measured value of the potential difference using the following formula: E °c = E ° - RT / nF InySi

In^ ι=( E° — E°c)nF/RT E°c :存在錯合離子時之標準電極電位 E :標準電極電位(前項之測定值) F:法拉第常數 L) R :氣體常數 τ:絕對溫度 η:金屬離子之價數 石1:錯合反應之平衡常數 • (反應式:M+1L—ML·、/^[ΜΙ^ΜΠΓ) 於此’ Μ :金屬離子’ l :配位基,[]表示莫耳濃度m〇i · L-i。 尚且’以下實施例及比較例所記載之值,係如上述般算出之 配位數1之錯合反應之平衡常數的常用對數值,氨之值係藉上 97134815 44 200920873 述記載之測定方法所算出之值。又,乙醇胺、二乙醇胺、乙二 胺及二乙基胺之值係引用自化學便覽基礎編(改訂3版,丸善 出版社)及 STABILITY CONSTANTS OF METAL-ION . c〇MPLEXES(1964 BURLINGTON HOUSE 出版)。又,在測定條件 與上述(25°C之1M硝酸銨水溶液中)不同時,於數值附加測定 條件。 [製作例1] ( 於N,N-二曱基-乙醯胺(以下簡稱為「DMAc」)170ml中,加 入均苯四酸二酐(以下簡稱為「PMDA」)7. 123g與4,4,—二胺 基二苯基醚(以下簡稱為「〇DA」)7. 877g,於室溫下攪拌6小 時,製作成聚醯亞胺先質清漆A,。此溶液之黏度係以E型黏 度計進行測定,結果為13926cps。將此聚醯亞胺先質清漆A, 使用DMAc稀釋為體積比之2倍’製作成聚醯亞胺先質清漆a。 [製作例2] 〇 SN一曱基-2一吡咯酮(以下簡稱為「NMP」)70ml中,加入5.45g 之PMDA與5. 00g之0DA,於室溫下授拌4小時製作成聚酿 亞胺先質清漆B。此溶液之黏度係以E型黏度計進行測定,結 果為 665cps ° [製作例3] 於__中,加入3,3,,4,4, 一聯笨基四甲酸二糾以 下簡稱為「隱」)7.36g與口—雙[4_(4_胺基笨氧基)苯基] 丙燒(以下簡稱為「聰」)10. 26g,於室溫下娜4小時,製 97134815 45 200920873 作成聚醯亞胺先質清漆C。此溶液之黏度係以£型黏度計進行 測定,結果為15cps。 [製作例4] - 將醋酸鎳(11)四水合物NKCHsCOO)2 · 4IM)以純水溶解,調 製成lOOmM之醋酸鎳(π)水溶液。於10〇mM醋酸鎳(11)水溶液 中,攪拌添加30重量%氨水溶液而使氨相對於鎳之莫耳比成為 6當量’調製成金屬化合物溶液D。此金屬化合物溶液D之邱 0為10. 35。又,鎳之標準電極電位為_〇. 228,氨對於則離^ 之錯合反應的平衡常數為2. 36。 [製作例5] 將醋酸錄(11)四水合物Ni(CH3_2 •伽以純水溶解,調 製成lOOmM之醋酸鎳(Π)水溶液。於1〇〇_醋酸鎳水溶液 中,攪拌添加二乙醇胺而使胺相對於鎳之莫耳比成為6各量, 調製成金屬化合物溶液E。此金屬化合物溶液E之饨為9犯。 ( 又,二乙醇胺(Mt,0.43M乙醇胺硝酸鹽水溶液)對於犯離 子之錯合反應的平衡常數為3. 31。 [製作例6] 將醋酸鎳(11)四水合物Ni(CH3_2 •彻以純水溶解,調 製成lOOmM之醋酸鎳(11)水溶液。於1〇〇祕醋酸鎳(丨I)水溶液 中’攪拌添加乙醇胺而使胺相對於鎳之莫耳比成為6當量,調 製成金屬化合物溶液F。此金屬化合物溶液F之油為犯。 又,乙醇胺(25t ’離子強度〇. 1M)對於Ni離子之錯合反應的 97134815 46 200920873 平衡常數為2. 98。 [製作例7] 將醋酸鎳(II)四水合物Ni(CH3C00)2 · 4H2〇以純水溶解,調 -製成100mM之醋酸鎳(II)水溶液。於100raM醋酸鎳(11)水溶液 中,攪拌添加二乙基胺而使胺相對於鎳之莫耳比成為6當量, 調製成金屬化合物溶液G。此金屬化合物溶液G之為 11. 30。又,二乙基胺(25°C,2M硝酸銨水溶液)對於Ni離子 f 之錯合反應的平衡常數為2. 78。 [製作例8] 將醋酸鎳(II)四水合物NUCMXX))2 · 4仏0以純水溶解,調 製成100mM之醋酸鎳(II)水溶液。於i〇QmM醋酸鎳(丨I)水溶液 中,攪拌添加乙二胺而使胺相對於鎳之莫耳比成為6當量,調 製成金屬化合物溶液H。此金屬化合物溶液11之邱為1〇 89。 又’乙二胺(25°C ’離子強度〇· 1M)對於Ni離子之錯合反應的 平衡常數為7. 35(25°C,離子強度0. 1M)。 [製作例9] 將醋酸銅(II)-水合物咖⑽£u ·關以純水溶解,調製 成之醋酸銅⑴)水溶液。於1〇〇m 液 胃中,授掉添加㈣规水而使氛相對於鋼之 量’調製成金屬化合物溶液ί。此金屬化合物溶液Ζ之邱為 10· 25。又’銅之標準電極電位為〇· 337,氨⑽,㈣氯酸 録水溶液)躲〇!離子之錯合反觸平衡為4. 27。 97134815 47 200920873 [製作例ίο] 將醋酸銅(II)一水合物(CH3COO)2Cu · mo以純水溶解,調f " 成100祕之醋酸銅(II)水溶液。於1〇〇_醋酸鋼(II)水容液 中,攪拌添加二乙醇胺而使胺相對於銅之莫耳比成為4舍量, 凋製成金屬化合物溶液J。此金屬化合物溶液j之抑為9 又,二乙醇胺(25°c,0.43M乙醇胺硝酸鹽水溶液)對於U離 子之錯合反應的平衡常數為4. 75。 ()[製作例11] 將醋酸銅(II)-水合物(CH3COO)2Cu · Η2〇以純水溶解,調製 成100mM之醋酸銅(II)水溶液。於1〇〇mM醋酸銅⑴)水溶液 中’攪摔添加乙二胺而使胺相對於銅之莫耳比成為4當量,調 製成金屬化合物溶液κ。此金屬化合物溶液〖之油為丨〇 68。 又’乙二胺(25°C ’離子強度〇.1M)對於Cu離子之錯合反應的 平衡常數為10. 54。 “ {j [製作例12] 將輕銀鱗以純水溶解,成臟之俩銀水溶液。 於臟猶銀水溶㈣,勝杨3Q重職水崎氨相對 耳比成4 2 #量’調製成金屬化合物溶液L。此金屬 化5物溶液1^邱為10.02。又,銀之標準電極電 隨,氨⑽,無限稀釋溶液)對於Ag離 的 平衡常數為3. 315。 [製作例13] 97134815 48 200920873 將硝酸銀AgN〇3以純水溶解,調製成丨〇 〇mM之硝酸銀水溶液。 於100mM硝酸銀水溶液中,攪拌添加二乙醇胺而使胺相對於銀 之莫耳比成為2當量’調製成金屬化合物溶液Μ。此金屬化合 - 物溶液Μ之ΡΗ為9. 35。又,銀之標準電極電位為0.7991,二 乙醇胺(25°C ’ 0.4M硝酸鋰水溶液)對於Ag離子之錯合反應的 平衡常數為3. 48。 [製作例14] 《)將頌酸銀Α§Ν〇3以純水溶解,調製成lOOmM之硝酸銀水溶液。 於lOOmM确酸銀水溶液中,攪拌添加乙二胺而使胺相對於銀之 莫耳比成為2當量’調製成金屬化合物溶液N。此金屬化合物 洛液N之pH為1〇· 22。又,乙二胺(2〇〇c,離子強度〇. 1M)對 於Ag離子之錯合反應的平衡常數為4. 7〇。 [實施例1] 將無鹼玻璃(旭玻璃股份有限公司製,AN_1〇〇)之試驗片 (,I2· 5cmx12. 5cm(厚0· 7mm)以50°C之5N氫氧化鈉水溶液進行處 理5分鐘。其次,以純水洗淨試驗片之玻璃基板,予以乾燥後, /文>貝於1重量%之3-胺基丙基三曱氧基矽烷(以下簡稱為「γ APS」)水溶液中。將此玻璃基板自γ 水溶液取出後,予 以乾爍,以15〇〇c進行加熱5分鐘。於該玻璃基板上使用旋塗 器,依lOOOrpm將上述聚醯亞胺先質清漆A旋塗1〇秒鐘後, 以130t乾燥30分鐘。藉旋塗、乾燥所形成之樹脂塗膜之厚 度為約3. 5 # m。 97134815 49 200920873 其次’將上述聚醯亞胺先質樹脂塗膜於上述金屬化合物溶液 D中於25°C浸潰10分鐘’使金屬離子含浸至聚醢亞胺先質樹 脂中。其後,將聚醯亞胺先質樹脂塗膜自金屬化合物溶液拉 起,予以水洗、乾燥。藉衍生結合電漿發光分析法(Icp_AES), 對聚醯亞胺先質樹脂塗膜所含有之鎳進行定量,結果每單位面 積為 llOOnmol/cm2。 將上述含浸有金屬離子之聚醯亞胺先質樹脂塗膜,以3〇。〇 浸潰於10mM之氫化硼鈉水溶液1分鐘而進行濕式還原處理, 於樹脂塗膜之表面上形成金屬薄膜。使用電子顯微鏡(SEM及 TEM)觀察金屬薄膜之表面及剖面’確認到金屬薄膜緻密且均勻 並具有lOOnm以上之膜厚。又,此金屬薄膜牢固地接黏至聚醯 亞胺先質樹脂塗膜上,確認到其具有作為後步驟之電鍍之種層 的充分性能。 [實施例2] 如同實施例1形成聚醯亞胺先質樹脂塗膜。將此聚醯亞胺先 質樹脂塗膜於上述金屬化合物溶液E中於25°C浸潰10分鐘, 使金屬離子含浸至聚酿亞胺先質樹脂中。其後,將聚酿亞胺先 質樹脂塗膜自金屬化合物溶液拉起,予以水洗、乾燥。藉衍生 結合電漿發光分析法(ICP-AES),對聚醯亞胺先質樹脂塗膜所 含有之鎳進行定量,結果每單位面積為l050nm〇1/cm2。 將上述含浸有金屬離子之聚醯亞胺先質樹脂塗膜,以3〇。〇 次潰於lOmM之氫化蝴鈉水溶液1分鐘而進行濕式還原處理, 97134815 50 200920873 於樹脂塗膜之表面上形成具光澤之金屬薄膜。使用電子顯微鏡 (SEM及TEM)觀察金屬薄膜之表面及剖面,確認到金屬薄膜緻 密且均勻並具有5〇nm以上之膜厚。又,此金屬薄膜牢固地接 - 黏至聚醯亞胺先質樹脂塗膜上,確認到其具有作為後步驟之電 鑛之種層的充分性能。 [實施例3] 如同實施例1形成聚醯亞胺先質樹脂塗膜。將此聚醯亞胺先 f 質樹脂塗膜於上述金屬化合物溶液F中於25°C浸潰10分鐘, 使金屬離子含浸至聚醯亞胺先質樹脂中。其後,將聚醯亞胺先 質樹脂塗膜自金屬化合物溶液拉起,予以水洗、乾燥。藉衍生 結合電漿發光分析法(ICP-AES),對聚醯亞胺先質樹脂塗膜所 含有之鎳進行定量,結果每單位面積為765nm〇1/cm2。 將上述含浸有金屬離子之聚醯亞胺先質樹脂塗膜,以30。〇 ✓文>貝於10mM之虱化删鈉水溶液1分鐘而進行濕式還原處理, U 於樹脂塗膜之表面上形成具光澤之金屬薄膜。此金屬薄膜牢固 地接黏至聚醯亞胺先質樹脂塗膜上,確認到其具有作為後步驟 之電鍍之種層的充分性能。 [實施例4] 如同實施例1形成聚醯亞胺先質樹脂塗膜。將此聚醯亞胺先 質樹脂塗膜於上述金屬化合物溶液G中於25°C浸潰10分鐘, 使金屬離子含次至聚酿亞胺先質樹脂中。其後,將聚酿亞胺先 質樹脂塗膜自金屬化合物溶液拉起,予以水洗、乾燥。 97134815 51 200920873 將上述含浸有金屬離子之聚醯亞胺先質樹骑塗膜,以3(rc 浸潰於10mM之氫化硼鈉水溶液1分鐘而進行濕式還原處理, 於樹脂塗膜之表面上形成具光澤之金屬薄祺。此金屬薄膜牢固 - 地接黏至聚酿亞胺先質樹脂塗膜上,確認到其具有作為後步驟 之電鍍之種層的充分性能。 [實施例5] 如同實施例1形成聚醯亞胺先質樹脂塗犋。將此聚醯亞胺先 f 質樹脂塗膜於金屬化合物溶液I中於25°C浸潰1〇分鐘,使金 屬離子含浸至聚醯亞胺先質樹脂中。其後,將聚酿亞胺先質樹 脂塗膜自金屬化合物溶液拉起,予以水洗、乾贤。 將上述含浸有金屬離子之聚醯亞胺先質樹腊塗膜,以3〇t: 浸潰於10mM之氫化硼鈉水溶液1分鐘而進行濕式還原處理, 於樹脂塗膜之表面上形成金屬薄膜。此金屬薄膜牢固地接黏至 聚醯亞胺先質樹脂塗膜上’確認到其具有後步驟之電鑛之導通 y 機能,可應用作為種層。 [實施例6] 如同實施例1形成聚醯亞胺先質樹脂塗犋。將此聚醯亞胺先 質樹脂塗膜於金屬化合物溶液J中於25Ϊ浸漬1〇分鐘,使金 屬離子含浸至聚醯亞胺先質樹脂中。其後,將聚酿亞胺先質樹 脂塗膜自金屬化合物溶液拉起,予以水洗、乾燥。 將上述含浸有金屬離子之聚醯亞胺先質樹脂塗膜,以3〇<t 浸潰於lGmM之氫化賴水溶液丨分鐘而進行赋還原處理, 97134815 52 200920873 於樹脂塗膜之表面上形成金屬薄膜。此金屬薄膜牢固地接黏至 聚醯亞胺先質樹脂塗膜上,確認到其具有後步驟之電鍍之導通 機能,可應用作為種層。 [實施例7] 如同實施例1形成聚醯亞胺先質樹脂塗膜。將此聚酿亞胺先 質樹脂塗膜於金屬化合物溶液L中於25°C浸潰1〇分鐘,使金 屬離子含浸至聚醯亞胺先質樹脂中。其後,將聚醯亞胺先質樹 脂塗膜自金屬化合物溶液拉起,予以水洗、乾燥。 將上述含浸有金屬離子之聚醯亞胺先質樹脂塗膜,以3(rc 浸潰於10mM之氫化硼鈉水溶液1分鐘而進行濕式還原處理, 於樹脂塗膜之表面上形成具光澤之金屬薄骐。此金屬薄膜牢固 地接黏至聚亞胺先質樹脂塗膜上,確認到其具有作為後步驟 之電鍍之種層的充分性能。 [實施例8] 如同實施例1形成聚酿亞胺先質樹脂塗膜。將此聚醮亞胺先 質樹脂塗膜於金屬化合物溶液Μ中於25°C浸潰10分鐘,使金 屬離子含浸至聚醯亞胺先質樹脂中。其後,將聚醯亞胺先質樹 脂塗膜自金屬化合物溶液拉起,予以水洗、乾燥。 將上述含浸有金屬離子之聚醯亞胺先質樹脂塗膜,以3〇〇c 浸潰於10mM之氳化棚納水溶液1分鐘而進行濕式還原處理, 於樹脂塗膜之表面上形成具光澤之金屬薄臈。此金屬薄膜牢固 地接黏至聚醯亞胺先質樹脂塗膜上,確認到其具有作為後步驟 97134815 53 200920873 之電鍍之種層的充分性能。 [實施例9] 如同實施例1形成聚醯亞胺先質樹脂塗膜。將此聚醯亞胺先 質樹脂塗膜於金屬化合物溶液N中於25°C浸潰10分鐘,使金 屬離子含浸至聚醯亞胺先質樹脂中。其後,將聚醯亞胺先質樹 脂塗膜自金屬化合物溶液拉起,予以水洗、乾燥。 將上述含浸有金屬離子之聚醯亞胺先質樹脂塗膜,以30。(: 浸潰於10mM之氫化棚納水溶液1分鐘而進行濕式還原處理, 於樹脂塗膜之表面上形成具光澤之金屬薄膜。此金屬薄膜牢固 地接黏至聚醯亞胺先質樹脂塗膜上,確認到其具有作為後步驟 之電鑛之種層的充分性能。 [比較例1 ] 如同實施例1形成聚醯亞胺先質樹脂塗膜。將此聚醯亞胺先In^ ι=( E° — E°c)nF/RT E°c : Standard electrode potential E when there is a mismatched ion: Standard electrode potential (measured value of the previous item) F: Faraday constant L) R : gas constant τ : Absolute temperature η: valence of metal ions Stone 1: equilibrium constant of the mismatch reaction • (Reaction formula: M+1L-ML·, /^[ΜΙ^ΜΠΓ) Here's '金属: metal ion' l : coordination Base, [] represents the molar concentration m〇i · Li. Further, the values described in the following examples and comparative examples are the usual logarithmic values of the equilibrium constant of the mismatch reaction of the coordination number 1 calculated as described above, and the value of ammonia is determined by the measurement method described in 97138815 44 200920873. Calculate the value. In addition, the values of ethanolamine, diethanolamine, ethylenediamine and diethylamine are quoted from the Basics of Chemical Handbook (Revised 3rd Edition, Maruzen Press) and STABILITY CONSTANTS OF METAL-ION. c〇MPLEXES (published by 1964 BURLINGTON HOUSE) . Further, when the measurement conditions are different from those described above (in a 1 M aqueous ammonium nitrate solution at 25 ° C), the measurement conditions are added to the numerical values. [Production Example 1] (in the case of N,N-dimercapto-acetamide (hereinafter abbreviated as "DMAc") 170 ml, pyromellitic dianhydride (hereinafter abbreviated as "PMDA") 7.123g and 4, 4,-Diaminodiphenyl ether (hereinafter abbreviated as "〇DA") 7.877g, stirred at room temperature for 6 hours to prepare a polyamidamine precursor varnish A. The viscosity of this solution is E The viscosity was measured and found to be 13926 cps. The polyamidene precursor varnish A was diluted with DMAc to a volume ratio of 2 times to prepare a polyimide varnish a. [Production Example 2] 〇SN1 In 70 ml of decyl-2-pyrrolidone (hereinafter abbreviated as "NMP"), 5.45 g of PMDA and 5.0 g of 0DA were added, and the mixture was mixed at room temperature for 4 hours to prepare a styrene precursor varnish B. The viscosity of the solution was measured by an E-type viscosity meter, and the result was 665 cps ° [Production Example 3] In __, 3, 3, 4, 4 was added, and the second stupid base of tetracarboxylic acid was referred to as "hidden". ) 7.36g and bis-[4_(4-aminophenyloxy)phenyl]propanone (hereinafter referred to as "Cong") 10.26g, at room temperature for 4 hours, made 97138815 45 200920873 Imine precursor Paint C. The viscosity of this solution was measured by a £-type viscosity meter and found to be 15 cps. [Production Example 4] - Nickel acetate (11) tetrahydrate NKCHsCOO) 2 · 4IM) was dissolved in pure water to prepare a 100 mM aqueous solution of nickel (π) acetate. To a 10 mM aqueous solution of nickel acetate (11), a 30% by weight aqueous ammonia solution was stirred and a molar ratio of ammonia to nickel of 6 equivalents was adjusted to prepare a metal compound solution D. 5。 The metal compound solution D of Qi 0 is 10.35. 5。 The standard electrode potential of nickel is _ 〇 228, the equilibrium constant of ammonia for the mismatch reaction is 2. 36. [Production Example 5] Acetic acid (11) tetrahydrate Ni (CH3 2 • Glycol was dissolved in pure water to prepare a 100 mM nickel acetate (hydrazine) aqueous solution. In a 1 〇〇-nickel acetate aqueous solution, diethanolamine was added thereto with stirring. The molar ratio of the amine to the nickel was made into 6 amounts, and the metal compound solution E was prepared. The metal compound solution E was 犯9. (Also, diethanolamine (Mt, 0.43 M ethanolamine nitrate aqueous solution) for the ion The equilibrium constant of the mismatch reaction was 3.31. [Production Example 6] Nickel acetate (11) tetrahydrate Ni (CH3 2 • was dissolved in pure water to prepare a 100 mM aqueous solution of nickel acetate (11). In the aqueous solution of nickel acetate (丨I), the molar ratio of the amine to the molar ratio of nickel is 6 equivalents, and the metal compound solution F is prepared. The oil of the metal compound solution F is a crime. Further, ethanolamine (25t) 'Ion strength 〇. 1M) 9713415 46 200920873 for the misalignment reaction of Ni ions The equilibrium constant was 2.98. [Production Example 7] Nickel (II) acetate tetrahydrate Ni(CH3C00)2 · 4H2 〇 as pure water Dissolved, adjusted - made into a 100 mM aqueous solution of nickel (II) acetate. And a solution of the metal compound solution G is 11.30. Further, two of the aluminum compound solution (G) is added to the aqueous solution of the nickel acetate (11), and the molar ratio of the amine to the nickel is 6 equivalents. The equilibrium constant of the misc reaction of ethylamine (25 ° C, 2 M aqueous solution of ammonium nitrate) with respect to Ni ion f was 2.78. [Production Example 8] Nickel (II) acetate tetrahydrate NUCMXX)) 2 · 4 仏0 is dissolved in pure water to prepare a 100 mM aqueous solution of nickel (II) acetate. In an aqueous solution of i〇QmM nickel acetate (丨I), ethylenediamine is added with stirring to make the molar ratio of amine to nickel 6 equivalent. The metal compound solution solution H. The metal compound solution 11 is 1 〇 89. The equilibrium constant of the 'ethylene diamine (25 ° C 'ion strength 〇 · 1M) for the Ni ion mismatch reaction is 7. 35 (25 °C, ionic strength: 0.1 M) [Production Example 9] A copper (II) acetate-hydrate coffee (10) was dissolved in pure water to prepare an aqueous copper acetate (1) solution. In the 1 〇〇m liquid stomach, the addition of (four) gauge water is applied to prepare the metal compound solution ί relative to the amount of steel. The solution of the metal compound solution is 10·25. Further, the standard electrode potential of copper is 〇· 337, ammonia (10), (4) chloric acid recorded aqueous solution) to avoid the ion balance of the counter-contact equilibrium of 4. 27. 97134815 47 200920873 [Production example ίο] Dissolve copper (II) acetate monohydrate (CH3COO) 2Cu · mo in pure water, and adjust f " into a 100-secret copper (II) acetate aqueous solution. In a 1 〇〇 acetic acid steel (II) aqueous solution, diethanolamine was added with stirring to make the molar ratio of the amine to copper 4, and the metal compound solution J was obtained. The equilibrium constant of the miscible reaction of the diamine (25 ° C, 0.43 M ethanolamine nitrate aqueous solution) for the U ion is 4.75. (Production Example 11) Copper (II) acetate-hydrate (CH3COO) 2Cu · Η 2 溶解 was dissolved in pure water to prepare a 100 mM aqueous solution of copper (II) acetate. Ethylenediamine was added to an aqueous solution of 1 mM mM copper acetate (1)) to make the molar ratio of the amine to copper 4 equivalent, and the metal compound solution κ was prepared. The oil of this metal compound solution is 丨〇68. Further, the equilibrium constant of the ethylene-amine (25 ° C 'ion strength 〇.1 M) for the Cu ion mismatch reaction was 10.54. "{j [Production Example 12] Dissolve light silver scales in pure water to form a dirty aqueous solution of silver. In the dirty water of silver (4), Sheng Yang 3Q heavy duty water ammonia relative to the ear ratio into 4 2 #量' modulation into a metal compound solution L. The metallization of the 5 solution is 10.02. In addition, the standard electrode of silver, ammonia (10), infinite dilution solution) has an equilibrium constant for Ag separation of 3.315. [Production Example 13] 97134815 48 200920873 The silver nitrate AgN 3 was dissolved in pure water to prepare a mM silver nitrate aqueous solution. In a 100 mM silver nitrate aqueous solution, diethanolamine was added thereto to make the amine molar ratio of the amine to 2 equivalents to prepare a metal compound solution Μ. The metal compound-solution Μ is 9.35. Further, the standard electrode potential of silver is 0.7991, and the equilibrium constant of the diethanolamine (25 ° C '0.4 M lithium nitrate aqueous solution) for the Ag ion is 3. 48. [Production Example 14] ") Silver ruthenate Α Ν〇 3 was dissolved in pure water to prepare a 100 mM aqueous solution of silver nitrate. In an aqueous solution of 100 mM acid silver, ethylenediamine was added with stirring to make the amine relative to silver. Moerby becomes 2 equivalents 'modulated into -7。 The compound compound solution N. The pH of the metal compound Loose N is 1 〇 22. Further, the equilibrium constant of the ethylene diamine (2 〇〇 c, ionic strength 〇. 1M) for the Ag ion mismatch reaction is 4. 7 [Example 1] A test piece of an alkali-free glass (AN_1〇〇, manufactured by Asahi Glass Co., Ltd.) (I2·5 cm×12. 5 cm (thickness: 0·7 mm) was subjected to a 5 N sodium hydroxide aqueous solution at 50°C. After the treatment, the glass substrate of the test piece was washed with pure water, and dried, and then dried in a weight of 1% by weight of 3-aminopropyltrimethoxy decane (hereinafter referred to as "γ APS"). In the aqueous solution, the glass substrate was taken out from the γ aqueous solution, dried, and heated at 15 ° C for 5 minutes. The polyacrylonitrile precursor varnish A was applied to the glass substrate using a spin coater at 100 rpm. After spin coating for 1 second, it was dried at 130 t for 30 minutes. The thickness of the resin coating film formed by spin coating and drying was about 3. 5 # m. 97134815 49 200920873 Next, the above polyimine precursor resin was coated. The film was immersed in the above metal compound solution D at 25 ° C for 10 minutes to impregnate the metal ions to the polyimide precursor. In the fat, the polyimine precursor resin coating film is pulled up from the metal compound solution, washed with water, and dried. The polyimide film is coated with a polyimide film by a derivative-based plasma luminescence analysis method (Icp_AES). The nickel contained therein was quantified, and the result was llOOnmol/cm 2 per unit area. The above-mentioned polyimide ion impregnated with a metal ion was coated with a film of 3 Å. The crucible was immersed in a 10 mM sodium borohydride aqueous solution for 1 minute. A wet reduction treatment is performed to form a metal thin film on the surface of the resin coating film. Observation of the surface and cross section of the metal thin film by an electron microscope (SEM and TEM) confirmed that the metal thin film was dense and uniform and had a film thickness of 100 nm or more. Further, the metal film was firmly adhered to the polyimide film of the polyimide precursor, and it was confirmed that it had sufficient properties as a seed layer for electroplating in the subsequent step. [Example 2] A polyimide film of a polyimide film was formed as in Example 1. The polyimide film was coated in the above-mentioned metal compound solution E at 25 ° C for 10 minutes to impregnate metal ions into the polyaniline precursor resin. Thereafter, the polyimide-based resin coating film was pulled up from the metal compound solution, washed with water, and dried. The nickel contained in the polyimide film of the polyimide precursor was quantitatively determined by a combination of plasma-infrared spectroscopy (ICP-AES), and the result was l050 nm 〇 1 /cm 2 per unit area. The above-mentioned polyimine imide resin impregnated with a metal ion was coated with a film of 3 Å. The wet reduction treatment was carried out by immersing in a 10 mM aqueous solution of hydrogenated sodium hydride for 1 minute, and 97134815 50 200920873 formed a glossy metal film on the surface of the resin coating film. The surface and the cross section of the metal thin film were observed by an electron microscope (SEM and TEM), and it was confirmed that the metal thin film was dense and uniform and had a film thickness of 5 Å or more. Further, the metal film was firmly adhered to the polyimide film of the polyimide film, and it was confirmed that it had sufficient properties as a seed layer of the electric ore which is a later step. [Example 3] A polyimide film of a polyimide film was formed as in Example 1. This polyimide film was coated in the above-mentioned metal compound solution F at 25 ° C for 10 minutes to impregnate metal ions into the polyimide precursor resin. Thereafter, the polyimide film of the polyimide precursor was pulled up from the metal compound solution, washed with water, and dried. The nickel contained in the polyimide film of the polyimine precursor was quantified by derivatization combined with plasma luminescence analysis (ICP-AES), and the result was 765 nm 〇 1 /cm 2 per unit area. The above-mentioned polyimine imide resin impregnated with a metal ion was coated with a film of 30 Å. 〇 文 文 文 于 于 于 于 于 于 于 于 于 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 This metal film was firmly adhered to the polyimide film of the polyimide film, and it was confirmed that it had sufficient properties as a seed layer for the subsequent step. [Example 4] A polyimide film of a polyimide film was formed as in Example 1. The polyimide film was coated in the above-mentioned metal compound solution G at 25 ° C for 10 minutes to cause the metal ions to be contained in the polyaniline precursor resin. Thereafter, the polyimide-based resin coating film was pulled up from the metal compound solution, washed with water, and dried. 97134815 51 200920873 The above-mentioned polyimide ion impregnated metal ion precursor tree was coated with a film of 3 (rc was immersed in a 10 mM sodium borohydride aqueous solution for 1 minute for wet reduction treatment on the surface of the resin coating film. A glossy metallic thin enamel is formed. This metal film is firmly bonded to the polyimide-based precursor resin coating film, and it is confirmed that it has sufficient properties as a seed layer for electroplating in the subsequent step. [Example 5] Example 1 was formed by coating a polyimine precursor resin. The polyimide film was coated in a metal compound solution I at 25 ° C for 1 minute to impregnate the metal ions into the polyimide. In the amine precursor resin, the polyaniline precursor resin coating film is pulled up from the metal compound solution, and washed with water and dried. The above-mentioned polyimine imide precursor wax coating film impregnated with metal ions is used. Wet reduction treatment was carried out by dipping in a 10 mM sodium borohydride aqueous solution for 1 minute to form a metal thin film on the surface of the resin coating film. The metal film was firmly bonded to the polyimide film. Membrane on the membrane that confirms its subsequent steps The conduction y function can be applied as a seed layer. [Example 6] A polyimine precursor resin was coated as in Example 1. The polyimide film was coated in a metal compound solution J at 25 Å. 1 minute, the metal ions are impregnated into the polyimine precursor resin. Thereafter, the polyimide-based precursor resin coating film is pulled up from the metal compound solution, washed with water, and dried. The above is impregnated with metal ions. The polyimine precursor resin coating film was subjected to a reduction treatment by immersing in a hydrogenated aqueous solution of 1 GmM for 3 minutes, and a metal thin film was formed on the surface of the resin coating film. 97134815 52 200920873 The ground was adhered to the polyimide film of the polyimide precursor, and it was confirmed that it had the conduction function of the plating in the subsequent step, and it could be applied as a seed layer. [Example 7] A polyimine precursor resin was formed as in Example 1. Coating film: The polyimide resin precursor resin coating film is immersed in the metal compound solution L at 25 ° C for 1 minute to impregnate the metal ions into the polyimide pigment precursor resin. Imine precursor resin coating film from metallization The solution solution is pulled up, washed with water, and dried. The above-mentioned polyimine-imide resin impregnated with metal ions is coated with a film, and wet-reduced by 3 (rc is immersed in a 10 mM sodium borohydride aqueous solution for 1 minute, A glossy metallic thin enamel is formed on the surface of the resin coating film. The metal thin film is firmly adhered to the polyimide precursor resin coating film, and it is confirmed that it has sufficient properties as a seed layer for the subsequent step. Example 8] A polyimide-based precursor resin coating film was formed as in Example 1. The polyimide film was coated with a polyimide film in a metal compound solution at 25 ° C for 10 minutes to impregnate metal ions to In the polyimine precursor resin, the polyimine precursor resin coating film is pulled up from the metal compound solution, washed with water, and dried. The above-mentioned polyimide-impregnated precursor resin coated with a metal ion was immersed in a 10 mM smear aqueous solution for 1 minute at 3 〇〇c to carry out a wet reduction treatment, and was formed on the surface of the resin coating film. The shiny metal is thin. This metal film was firmly adhered to the polyimide film of the polyimide film, and it was confirmed that it had sufficient properties as the plating layer of the subsequent step 97134815 53 200920873. [Example 9] A polyimide film of a polyimide film was formed as in Example 1. This polyimide precursor resin coating film was immersed in the metal compound solution N at 25 ° C for 10 minutes to impregnate the metal ions into the polyimide precursor resin. Thereafter, the polyimine precursor resin coating film was pulled up from the metal compound solution, washed with water, and dried. The above-mentioned polyimine imide resin impregnated with a metal ion was coated with a film of 30 Å. (: A wet metal film was formed by immersing in a 10 mM hydrogenated shed aqueous solution for 1 minute to form a glossy metal film on the surface of the resin coating film. The metal film was firmly adhered to the polyimide film. On the film, it was confirmed that it had sufficient performance as a seed layer of the electric ore which is a later step. [Comparative Example 1] A polyimide film was formed as in Example 1. The polyimine was first.

質樹脂塗膜於lOOmM之醋酸鎳(II)水溶液(pH7. 22)中於25°C ij 浸潰10分鐘’使金屬離子含浸至聚醯亞胺先質樹脂中。其後, 將1贐亞lie先質樹脂塗膜自金屬化合物溶液拉起,予以水洗、 乾燥。藉衍生結合電衆發光分析法(ICp_aes),對聚醯亞胺先 質樹脂塗膜所含有之鎳進行定量,結果每單位面積為 120nmol/cm2。 將上述含浸有金屬離子之聚醯亞胺先質樹脂塗膜,以3〇。匸 浸潰於lGmM之氫化職水溶液!分鐘而進行濕式還原處理。 結果雖析出了錄之微粒子’但同時亦觀察到錦之微粒子溶出於 97134815 54 200920873 還原劑水溶液中之情況。使用電子顯微鏡(SEM及TEM)觀察還 原後之聚醯亞胺先質樹脂塗膜之表面及剖面,結果確認到鎳之 微粒子點狀分佈於樹脂塗膜表面。該金屬微粒子之層為不連 - 續,雖可使用作為無電解鍍敷之核,但不足以作為電鍍之種層。 [比較例2] 如同實施例1形成聚醯亞胺先質樹脂塗膜。將此聚醯亞胺先 質樹脂塗膜於上述金屬化合物溶液H中於25°c浸潰1〇分鐘, ( 使金屬離子含浸至聚醯亞胺先質樹脂中。其後,將聚醯亞胺先 質樹脂塗膜自金屬化合物溶液拉起,予以水洗、乾燥。藉衍生 結合電漿發光分析法(ICP-AES),對聚酿亞胺先質樹脂塗膜所 含有之鎳進行定量,結果每單位面積為82〇nm〇i/cm2。 將上述含浸有金屬離子之聚酿亞胺先質樹脂塗膜,以3〇。〇 浸潰於lOmM之氫化硼鈉水溶液1分鐘而進行濕式還原處理, 但未確認到鎳之金屬薄膜,樹脂塗膜之表面僅呈白濁。 (_ | [比較例3] 如同實施例1形成聚醢亞胺先質樹脂塗膜。將此聚醯亞胺先 質樹脂塗膜於金屬化合物溶液K中於25°C浸潰1〇分鐘,使金 屬離子含浸至聚醯胺酸樹脂中。其後,將聚醯胺酸樹脂塗膜自 金屬化合物溶液拉起,予以水洗、乾燥。 將上述含浸有金屬離子之聚醯亞胺先質樹脂塗膜,以30°c 浸潰於10mM之氫化侧納水溶液1分鐘而進行濕式還原處理, 但未確認到銅之金屬薄膜’且確認到樹脂塗膜之溶解。 97134815 55 200920873 由以上結果,使用本發明之導體層形成用組成物(金屬化合 物溶液)之實施例丨〜9中,係形成具有可確保充分導通之緻密 -- 性,且於聚醯亞胺先質樹脂之間具有高密接性之金屬薄膜作為 - 電鍵之種(核)。此等實施例卜9中,使用含有金屬種為Ni或The resin coating film was immersed in a 100 mM aqueous solution of nickel (II) acetate (pH 7.22) at 25 ° C for 10 minutes to impregnate metal ions into the polyimide precursor resin. Thereafter, the coating film of the 赆 lie precursor resin was pulled up from the metal compound solution, washed with water, and dried. The nickel contained in the polyimide film of the polyimide film was quantified by the derivative combined electron luminescence analysis method (ICp_aes), and the result was 120 nmol/cm 2 per unit area. The above-mentioned polyimine imide resin impregnated with a metal ion was coated with a film of 3 Å.浸 Dip in lGmM hydrogenated aqueous solution! Wet reduction treatment was carried out in minutes. As a result, the recorded microparticles were precipitated, but it was also observed that the fine particles of the brocade were dissolved in the aqueous solution of the reducing agent of 97134815 54 200920873. The surface and the cross section of the polyimide film coated with the polyimide film were observed by an electron microscope (SEM and TEM). As a result, it was confirmed that the fine particles of nickel were distributed on the surface of the resin coating film. The layer of the metal fine particles is not continuous, and although it can be used as a core for electroless plating, it is not sufficient as a seed layer for electroplating. [Comparative Example 2] A polyimide film of a polyimide film was formed as in Example 1. The polyimine precursor resin coating film is immersed in the above metal compound solution H at 25 ° C for 1 minute, (metal ions are impregnated into the polyimine precursor resin. Thereafter, the poly The amine precursor resin coating film is pulled up from the metal compound solution, washed with water, and dried. The nickel contained in the polyimide-based precursor resin coating film is quantified by derivatization combined with plasma luminescence analysis (ICP-AES). The unit area is 82 〇nm〇i/cm2. The above-mentioned metal ion imide precursor resin coated with metal ions is coated with a solution of 3 Torr. The solution is immersed in a 10 mM sodium borohydride aqueous solution for 1 minute for wet reduction. After the treatment, the metal film of nickel was not confirmed, and the surface of the resin coating film was only white turbid. (_ | [Comparative Example 3] A polyimide film was formed as in the first embodiment. The resin coating film is immersed in the metal compound solution K at 25 ° C for 1 minute to impregnate the metal ion into the polyphthalic acid resin. Thereafter, the polyaminic acid resin coating film is pulled up from the metal compound solution, and then Washed and dried. The above-mentioned polyimine impregnated with metal ions The resin coating film was subjected to wet reduction treatment by immersing in a 10 mM hydrogenated aqueous sodium solution at 30 ° C for 1 minute, but the copper metal film was not confirmed, and the dissolution of the resin coating film was confirmed. 97134815 55 200920873 From the above results, In the examples 丨 to 9 in which the conductor layer-forming composition (metal compound solution) of the present invention is used, it is formed to have a dense property capable of ensuring sufficient conduction, and has high adhesion between the polyimide-based precursor resins. Metallic film as a type of - bond (nuclear). In these examples, the metal species used is Ni or

Ag之金屬化合物與含氮化合物的導體層形成用組成物的實施 例1〜4、7〜9中,可形成具光澤、緻密之金屬薄膜。尤其是使 用Ni化合物與氨或二乙醇胺之實施例丨及2中,可得到均勻 ( '.且充分膜居、緻逸、之金屬薄膜,而為表現本發明效果之最大限 度的結果。 另-方面’使用不含含氮化合物之金屬化合物溶液的比較例 卜不僅確認到金屬粒子之不連續析出,亦無法形成緻密之金 屬薄膜。又,於使用與Νι離子之錯合反應之平衡常數超過6 之乙二胺的比較例2 ’或使用與Cu離子之錯合反應之平衡常 數超過6之乙二胺的比較例3中,無法形成金屬薄膜。又,將 ij 上述實施例1〜9及比較例1〜3之結果整合於表1。 97134815 56 200920873 (表1) 金屬化合物溶液 評價 金屬 標準電極電位 含氮化合物 平衡常數 pH 膜狀態 密接性 實施例1 Ni -0.228 氨 2.36 10.35 厚膜•緻密 非常良好 實施例2 Ni -0.228 二乙醇胺 3.31 9.82 厚膜•緻密 非常良好 實施例3 Ni -0. 228 乙醇胺 2.98 10.52 均質連續 良好 實施例4 Ni -0.228 二乙基胺 2. 78 11.30 均質連續 良好 實施例5 Cu 0.337 氨 4.27 10.25 不均質連續 良好 實施例6 Cu 0.337 二乙醇胺 4. 75 9. 75 不均質連續 良好 實施例7 Ag 0. 7991 氨 3. 315 10.02 均質連續 良好 實施例8 Ag 0. 7991 二乙醇胺 3.48 9.35 均質連續 良好 實施例9 Ag 0.7991 乙二胺 4. 70 10. 22 均質連續 良好 比較例1 Ni -0.228 — — 7.22 不連續 — 比較例2 Ni -0. 228 乙二胺 7.35 10.89 不形成 — 比較例3 Cu 0.337 乙二胺 10.54 10. 68 不形成 — 97134815 57 200920873 [實施例ίο] 準備東麗•杜邦股份有限公司製之聚酿亞胺㈣” Kapt〇n ΕΝ”(商品名)之試驗片1QcmxlQan(厚25㈣作為聚醯亞胺基 ' 板。於該聚醯亞胺基板上使用點膠機(索尼股份有限公司製 CASTPRO 11(商品名))將聚醯亞胺先質清漆成約 寬之直線後,a 125°C進行乾燥1G分鐘。藉描綠、乾燥所形 成之塗佈膜之厚度為2//m。 ( 其次,將上述《亞胺先質職塗餘上述金屬化合物溶液 D中以25(:/文>責1〇分鐘’使金屬離子含浸於聚酿亞胺先質樹 脂中。其後’將聚妨胺先質樹脂塗膜自麵化合物溶液拉 起’予以水洗、乾燥。 將上述含浸有金屬離子之聚醯亞胺先質樹脂塗膜,以3〇乞 浸潰於lGmM之氫化賴水溶液丨分鐘而進行濕式還原處理, 於樹月曰塗臈之表面上形成金屬薄膜。使用電子顯微鏡⑽M及 ◎ TEM)觀察金屬薄膜之表面及剖面,確認到金屬薄膜㈣且均勾 並具有lOOnm以上之膜厚。又,此金屬薄膜牢固地接黏至聚醯 亞胺先質樹脂塗膜上,確認到其具有作為後步驟之電鍍之種層 的充分性能。再者,對聚醯亞胺基板之鎳層,於銅電鍍浴中以 3. 5A/dm之電流密度進行電鍍,形成銅膜厚之銅佈線層。 將所付之鋼佈線形成聚醯亞胺基板於氮環境中加熱至3 0 0 C ’以同μ度費時5分鐘將構成塗佈膜之聚醯亞胺先質樹脂進 行酿亞胺化而形成聚醯亞胺樹脂層。其後,將銅佈線形成聚醯 97134815 58 200920873 亞月女基板於氮% ;兄中冷部至常溫。此銅佈線形成聚酿亞胺基板 係聚酸亞胺樹脂層與鎳層之密接性優越,經由此等聚酿亞胺樹 脂層及錄層而使銅佈線層牢固麵定於聚醯亞胺基板上。又, 鎳層及以其作絲底㈣成_佈料均無缺陷,具有優越之 導通性能。 [實施例11] 將無驗玻璃(旭玻璃股份有限公司製AN__之試驗片 12. 5Cmxl2· 5em(厚〇. 7mm)藉机之5N氫氧化納水溶液進行處 理5分鐘。其次’以純水洗淨試驗片之麵基板,並予以乾燥 後,浸潰於i重量%之r-APS水溶液中。將此玻璃基板自r _燃 水溶液取出後’予以乾燥’以15(rc進行加熱5分鐘。準備於 市售之噴墨式印刷機之油墨· t填充有上述聚醯亞胺先質 清漆C者作為液滴吐出裝置5Q。然後,藉此噴墨印刷機於上 述玻璃基板上吐出聚醯亞胺先質清漆(:,描繪約5〇#m寬之直 線。其後,將玻璃基板上之塗佈膜以13{rc之溫度乾燥1〇分 鐘。藉描繪、乾燥所形成之塗佈膜之厚度為〇. 5#出。 其次,將上述聚邮胺先請脂塗膜於切金屬化合物溶液 D中以25t:浸潰10分鐘,使金屬離子含浸於聚醯亞胺先質樹 脂中。其後,將聚醯亞胺先質獅_自金屬化合物溶液拉 起,予以水洗、乾燥。 將上述含浸有金屬離子之聚醢亞胺先質樹脂塗膜,以3(rc 浸潰於lGmM之氫化賴水溶液1分鐘而進行濕式還原處理, 59 97134815 200920873 ;樹月曰塗膜之表面上形成金屬薄膜。使用電子顯微鏡(灘及 TEM)觀察金屬薄膜之表面及剖面,相到金屬 薄膜緻密且均勻 U lGGnm以上之膜厚。又’此金屬薄膜牢固地接黏至聚酿 亞胺先4抓錄上,礙$到其具有作為後步社電鑛之種層 的充分性能。 再者•玻璃基板之鎳層,於銅電鑛浴中以2_ 5A/dm2之電流 密度進行電鑛,形成銅膜厚,m之銅佈線層。 將所得之銅佈線形成玻璃基板於氮環境中加熱至·,以 同μ度費時5分鐘將構成塗佈臈之聚醯亞胺先質樹脂進行醯 亞胺化而形成_亞胺樹脂層。其後,將銅佈線形成玻璃基板 於氮裱境中冷卻至常溫。此銅佈線形成玻璃基板係聚醯亞胺樹 月曰層與鎳層之密接性優越,經由此等聚醯亞胺樹脂層及鎳層而 使銅佈線層牢固地固定於玻璃基板上。又,鎳層及以其作為基 底而形成的銅佈線層均無缺陷,具有優越之導通性能。 [實施例12] 將無驗玻璃(旭玻璃股份有限公司製ΑΝ-100)之試驗片 12. 5cinxl2. 5cm(厚Q. 7πιπι)藉50 C之5Ν氮氧化納水溶液進行處 理5分鐘。其次,以純水洗淨試驗片之玻璃基板,並予以乾燥 後,浸潰於1重量%之7-APS水溶液中。將此玻璃基板自7-APS 水溶液取出後,予以乾燥’以150°C進行加熱5分鐘。於該玻 璃基板上均勻塗佈上述聚醯亞胺先質清漆A,以130°C之溫度 乾燥30分鐘。藉塗佈、乾燥所形成之塗佈膜之厚度為2#m。 97134815 60 200920873 其次’將上述魏亞胺先質樹脂類於上述金屬化合物溶液 D中X 25 C/又/貝1〇分鐘,使金屬離子含浸於聚醯亞胺先質樹 脂中。其後’將聚醯亞胺先質樹脂塗膜自金屬化合物溶液拉 - 起’予以水洗、乾燥。 將上述含浸有金屬離子之聚酿亞胺先質樹脂塗膜,以3(rc /又:於lGmM之氫化職水溶液丨分鐘而進行濕式還原處理, 於樹月曰塗臈之表面上形成金屬薄膜。使用電子顯微鏡娜及 TEM)觀察金屬薄歡表面及剖面,確蝴金屬薄舰密且均句 並…有lOOnm以上之膜厚。又’此金屬帛膜牢固地接黏至聚醯 亞胺先質樹脂塗膜上,確認到其具有作為後步驟之電鍍之種層 的充分性能。 再者,對玻璃基板之錄層,於銅錢浴中以2 5A/dm2之電流 密度進行電鑛’形成銅膜厚2G Am之銅佈線層。 將所得之銅佈線形成玻璃基板於氮環境中加熱至3G(TC,以 Q 同1度費日守5分鐘將構成塗佈膜之聚醯亞胺先質樹脂進行醯 亞胺化而形成聚醯亞胺樹脂層。其後,將銅佈線形成玻璃基板 於氮環境中冷卻至常溫。 於此銅饰線$成玻璃基板之鑛銅層上層合乾薄膜光阻後,經 由光罩進行紫外線曝光、顯影,形成5〇_間則佈線寬/佈線 間隔(L/S)=20#m/30/zm丨之光阻圖案。將所形成之佈線空白部 之鑛銅層以韻刻去除,接著將聚醯亞胺樹脂餘刻去除,藉此得 到銅佈線形成破璃基板。此銅佈線形成玻璃基板係聚酿亞胺樹 97134815 61 200920873 脂層與鎳層之密接性優越,銅佈線層經由此等聚醯亞胺樹脂層 及錄層而牢固地固定於玻璃基板。又,鎳層及以其作為基底而 - 形成的銅佈線層均無缺陷,具有優越之導通性能。 [實施例13] 將l〇g破璃微粒子(M0RITEX公司製,Microspheres 424(商 品名)’粒度分佈5〜50/zm)分散於50〇C之5N氫氧化鈉水溶液 (500mL)並攪拌2分鐘。接著將玻璃微粒子過濾、水洗,分散 f 於1重量%之T-APS水溶液(500mL)中。其後進行過濾、水洗、 乾燥,以15(TC加熱5分鐘。將經上述處理之玻璃微粒子〇. 5g 分散於使聚醯亞胺先質清漆A依體積比5倍稀釋之DMAc溶液 10ml中,在攪拌之下滴下添加乙醇。攪拌分鐘後, 將此分散液過濾,以乙醇洗淨後乾燥,以13yc加熱1〇分鐘, 得到被覆了聚醯亞胺先質樹脂之玻璃微粒子Ml。 其次,將上述聚醯亞胺先質樹脂被覆之玻璃微粒子分散 〇 於金屬化合物溶液D中’以25X:攪拌1〇分鐘。其後,將分散 液過濾並予以水洗、乾燥,得到被覆了含浸有Ni離子之聚醯 亞胺先質樹脂的玻璃微粒子。 將上述Ni離子含浸聚醯亞胺先質樹脂被覆之玻璃微粒子, 分散於UhnM之氫化硼鈉水溶液中並以3〇。(:擾拌1分鐘。其後, 將分散液過遽、水洗、乾燥,得到具有Mi金屬薄膜之微粒子。 使用光學顯微鏡觀察具有金屬薄膜之微粒子,確認到其具有金 屬光澤。又,使用電子顯微鏡(SEM)觀察具有金屬薄膜之微粒 97134815 62 200920873 子表面,確認到金屬薄膜敏密且連續。 [實施例14] 如同實施例13,形成被覆了聚醯亞胺先質樹脂之玻璃微粒 子M2。將其分散於金屬化合物溶液E中,以25°C擾拌10分鐘。 其後,將分散液過濾並予以水洗、乾燥,得到被覆了含浸有 Ni離子之聚醯亞胺先質樹脂的玻璃微粒子。 將上述Ni離子含浸聚醯亞胺先質樹脂被覆之玻璃微粒子, 分散於10mM之氫化硼鈉水溶液中並以30°C攪拌1分鐘。其後, 將分散液過濾、水洗、乾燥,得到具有Ni金屬薄膜之微粒子。 使用光學顯微鏡觀察具有金屬薄膜之微粒子,確認到其具有金 屬光澤。 [實施例15] 如同實施例13,形成被覆了聚醯亞胺先質樹脂之玻璃微粒 子M3。將其分散於金屬化合物溶液F中,以25°C擾拌1〇分鐘。 其後,將分散液過渡並予以水洗、乾燥,得到被覆了含浸有 Ni離子之聚醯亞胺先質樹脂的玻璃微粒子。 將上述Ni離子含浸聚醯亞胺先質樹脂被覆之玻璃微粒子, 分散於10mM之氫化硼鈉水溶液中並以3(TC攪拌1分鐘。其後, 將分散液過濾、水洗、乾燥’得到具有Ni金屬薄膜之微粒子。 使用光學顯微鏡觀察具有金屬薄膜之微粒子,確認到其具有金 屬光澤。 [實施例16] 97134815 63 200920873 如同實施例13,形成被覆了聚醯亞胺先質樹脂之玻璃微粒 子M4。將其分散於金屬化合物溶液G中,以25°C攪拌10分鐘。 - 其後,將分散液過濾並予以水洗、乾燥,得到被覆了含浸有 Ni離子之聚醯亞胺先質樹脂的玻璃微粒子。 將上述Ni離子含浸聚醯亞胺先質樹脂被覆之玻璃微粒子, 分散於10mM之氫化硼鈉水溶液中並以30°C攪拌1分鐘。其後, 將分散液過濾、水洗、乾燥’得到具有Ni金屬薄膜之微粒子。 f、 使用光學顯微鏡觀察具有金屬薄膜之微粒子,確認到其具有金 屬光澤。 [實施例17] 如同實施例13,形成被覆了聚醯亞胺先質樹脂之玻璃微粒 子M5。將其分散於金屬化合物溶液I中,以25。(:攪拌10分鐘。 其後,將分散液過濾並予以水洗、乾燥,得到被覆了含浸有 Cu離子之聚醯亞胺先質樹脂的玻璃微粒子。 (j 將上述Cu離子含浸聚醯亞胺先質樹脂被覆之玻璃微粒子, 分散於10mM之氫化棚鈉水溶液中並以3(TC擾拌1分鐘。其後, 將分散液過濾、水洗、乾燥’得到具有Cu金屬薄膜之微粒子。 使用光學顯微鏡觀察具有金屬薄膜之微粒子,確認到其具有金 屬光澤。 [實施例18] 如同實施例13 ’形成被覆了聚醯亞胺先質樹脂之玻璃微粒 子M6。將其分散於金屬化合物溶液j中,以25°c攪拌10分鐘。 97134815 64 200920873 其後,將分散液過濾並予以水洗、乾燥,得到被覆了含浸有 Cu離子之聚醯亞胺先質樹脂的玻璃微粒子。 - 將上述Cu離子含浸聚醯亞胺先質樹脂被覆之玻璃微粒子, - 分散於10mM之氫化硼鈉水溶液中並以30°C攪拌1分鐘。其後, 將分散液過濾、水洗、乾燥,得到具有Cu金屬薄膜之微粒子。 使用光學顯微鏡觀察具有金屬薄臈之微粒子,確認到其具有金 屬光澤。 f [實施例19] 如同實施例13,形成被覆了聚醯亞胺先質樹脂之玻璃微粒 子M7。將其分散於金屬化合物溶液L中,以25。(:攪拌10分鐘。 其後,將分散液過濾、並予以水洗、乾燥,得到被覆了含浸有 Ag離子之聚醯亞胺先質樹脂的玻璃微粒子。 將上述Ag離子含浸聚醯亞胺先質樹脂被覆之玻璃微粒子, 分散於10mM之氳化硼鈉水溶液中並以30°C攪拌1分鐘。其後, (_./ 將分散液過濾、水洗、乾燥,得到具有Ag金屬薄膜之微粒子。 使用光學顯微鏡觀察具有金屬薄膜之微粒子,確認到其具有金 屬光澤。 [實施例20] 如同實施例13,形成被覆了聚醯亞胺先質樹脂之玻璃微粒 子M8。將其分散於金屬化合物溶液Μ中’以25°C攪拌10分鐘。 其後’將分散液過濾並予以水洗、乾燥,得到被覆了含浸有 Ag離子之聚醯亞胺先質樹脂的玻璃微粒子。 97134815 65 200920873 將上述Ag離子含浸聚醯亞胺先質樹脂被覆之玻璃微粒子, 分散於lOmM之氫化硼鈉水溶液中並以3〇°c攪拌1分鐘。其後, 將分散液過遽、水洗、乾燥’得到具有Ag金屬薄膜之微粒子。 使用光學顯微鏡觀察具有金屬薄膜之微粒子,確認到其具有金 屬光澤。 [實施例21 ] 如同實施例13,形成被覆了聚醯亞胺先質樹脂之玻璃微粒 子M9。將其分散於金屬化合物溶液N中,以25〇c攪拌1〇分鐘。 其後,將分散液過濾並予以水洗、乾燥,得到被覆了含浸有 Ag離子之聚醯亞胺先質樹脂的玻璃微粒子。 將上述Ag離子含浸聚醯亞胺先質樹脂被覆之玻璃微粒子, 分散於10mM之氫化硼鈉水溶液中並以3〇。〇攪拌1分鐘。其後, 將分散液過濾、水洗、乾燥,得到具有Ag金屬薄膜之微粒子。 使用光學顯微鏡觀察具有金屬薄膜之微粒子,確認到其具有金 屬光澤。 [比較例4] 如同實施例13,形成被覆了聚醯亞胺先質樹脂之玻璃微粒 子。將其分散於100mM醋酸鎳水溶液中,以25〇C攪拌10分鐘。 其後,將分散液過渡並予以水洗、乾燥,得到被覆了含浸有 Ni離子之聚醯亞胺先質樹脂的玻璃微粒子。 將上述Ni離子含浸聚醯亞胺先質樹脂被覆之玻璃微粒子, 分散於lOmM之氫化棚納水溶液中並以3〇它授拌1分鐘。其後, 97134815 66 200920873 將分散液過濾、水洗、乾燥,得到微黑色之微粒子。雖以光學 顯微鏡進行觀察,但於所得之微粒子表面並未確認到金屬光 - 澤。 - [比較例5] 如同實施例13,形成被覆了聚醯亞胺先質樹脂之玻璃微粒 子。將其分散於金屬化合物溶液Η中,以25。(:授拌10分鐘。 其後,將分散液過濾並予以水洗、乾燥,得到被覆了含浸有 (' Ni離子之聚醯亞胺先質樹脂的玻璃微粒子。 將上述Ni離子含浸聚醯亞胺先質樹脂被覆之玻璃微粒子, 分散於10mM之氫化硼鈉水溶液中並以3(TC攪拌1分鐘。其後, 將分散液過濾、、水洗、乾燥’得到白色之微粒子。於還原處理 時,微粒子表面並無金屬還原之情形,即使以光學顯微鏡進行 觀察,所得微粒子表面上仍未確認到金屬薄膜之存在。 [比較例6] C., 如同實施例13,形成被覆了聚醯亞胺先質樹脂之玻璃微粒 子。將其分散於金屬化合物溶液K中,以25°C授拌10分鐘。 其後,將分散液過濾並予以水洗、乾燥,得到被覆了含浸有 Cu離子之聚醯亞胺先質樹脂的玻璃微粒子。 將上述Cu離子含浸聚醯亞胺先質樹脂被覆之玻璃微粒子, 分散於lOmM之氫化硼鈉水溶液中並以3(rc攪拌丨分鐘。其後, 將分散液過濾、水洗、乾燥,得到白色之微粒子。於還原處理 時,微粒子表面並無金屬還原之情形,即使以光學顯微鏡進行 97134815 67 200920873 觀察,所得微粒子表面上仍未確認到金屬薄膜之存在。 將上述實施例13〜21及比較例4〜6之結果整合示於表2。In Examples 1 to 4 and 7 to 9 of the composition for forming a conductor layer of the metal compound of Ag and the nitrogen-containing compound, a glossy and dense metal thin film can be formed. In particular, in Examples and 2 in which a Ni compound and ammonia or diethanolamine are used, a uniform ('. and sufficient film-forming, absorbing metal film) can be obtained, and the result of maximizing the effects of the present invention is obtained. In the comparative example of using a metal compound solution containing no nitrogen-containing compound, it was confirmed that a discontinuous precipitation of metal particles was not observed, and a dense metal film could not be formed. Further, the equilibrium constant of the mismatch reaction with Νι ions exceeded 6 Comparative Example 2 of ethylenediamine or Comparative Example 3 using an ethylenediamine having an equilibrium constant of more than 6 in the miscombination reaction with Cu ions, a metal thin film could not be formed. Further, ij was compared with Examples 1 to 9 above. The results of Examples 1 to 3 are integrated in Table 1. 97134815 56 200920873 (Table 1) Evaluation of metal compound solution Metal standard electrode potential Nitrogen compound equilibrium constant pH Film state adhesion Example 1 Ni -0.228 Ammonia 2.36 10.35 Thick film • Very dense Good Example 2 Ni -0.228 Diethanolamine 3.31 9.82 Thick film • Compact very good Example 3 Ni -0. 228 Ethanolamine 2.98 10.52 Homogeneous continuous good implementation 4 Ni -0.228 Diethylamine 2. 78 11.30 Homogenization Continuous Good Example 5 Cu 0.337 Ammonia 4.27 10.25 Heterogeneous Continuous Good Example 6 Cu 0.337 Diethanolamine 4. 75 9. 75 Heterogeneous Continuous Good Example 7 Ag 0. 7991 Ammonia 3. 315 10.02 Homogeneous continuous good Example 8 Ag 0. 7991 Diethanolamine 3.48 9.35 Homogeneous continuous good Example 9 Ag 0.7991 Ethylenediamine 4. 70 10. 22 Homogeneous continuous good Comparative Example 1 Ni -0.228 — — 7.22 No Continuous - Comparative Example 2 Ni -0. 228 Ethylenediamine 7.35 10.89 Not formed - Comparative Example 3 Cu 0.337 Ethylenediamine 10.54 10. 68 Not formed - 97134815 57 200920873 [Example ίο] Prepared by Toray DuPont Co., Ltd. A test piece of 1QcmxlQan (thickness 25 (4) as a poly(imine) based on the polystyrene (4) "Kapt〇n ΕΝ" (trade name). A dispenser was used on the polyimide substrate (made by Sony Corporation) CASTPRO 11 (trade name)) After varnishing the polyimide precursor to a width of about Width, it was dried at 125 ° C for 1 G minutes. The thickness of the coating film formed by greening and drying was 2 / / m. Second, the above The imine is first coated with the above metal compound solution D to impregnate the metal ion in the polyurethane precursor with 25 (: 1). Thereafter, the polyamine precursor resin coating film is pulled from the surface compound solution to be washed with water and dried. The above-mentioned metal ion impregnated precursor resin coating film was impregnated with 1 G mM hydrogenated aqueous solution for 3 minutes, and subjected to wet reduction treatment to form a metal thin film on the surface of the sap . The surface and the cross section of the metal thin film were observed using an electron microscope (10) M and ◎ TEM), and it was confirmed that the metal thin film (4) was hooked to have a film thickness of 100 nm or more. Further, the metal film was firmly adhered to the polyimide film of the polyimide precursor, and it was confirmed that it had sufficient properties as a seed layer for electroplating in the subsequent step. Further, the nickel layer of the polyimide substrate was plated at a current density of 3.5 A/dm in a copper plating bath to form a copper wiring layer having a thick copper film thickness. The steel wire to be formed is formed into a polyimide substrate and heated to 300 ° C in a nitrogen atmosphere, and the polyimine precursor resin constituting the coating film is subjected to iminoation at a time of 5 minutes. Polyimine resin layer. Thereafter, the copper wiring is formed into a polyfluorene 97134815 58 200920873 sub-monthly female substrate in nitrogen%; the middle part of the cold to normal temperature. The copper wiring forms a polyimide-based substrate-based polyimine resin layer and the nickel layer is excellent in adhesion, and the copper wiring layer is firmly fixed to the polyimide substrate via the polyimide resin layer and the recording layer. on. In addition, the nickel layer and the bottom of the wire (4) are free from defects and have excellent conduction properties. [Example 11] A non-inspective glass (a test piece of AN__ manufactured by Asahi Glass Co., Ltd.) of 5Cmxl2·5em (thickness. 7mm) was treated with a 5N aqueous solution of sodium hydroxide for 5 minutes. Secondly, pure water was used. The surface substrate of the test piece was washed, dried, and then immersed in an i weight% r-APS aqueous solution. The glass substrate was taken out from the r-burning aqueous solution and then dried, and heated at 15 (rc for 5 minutes). The ink of the ink jet printer which is prepared in the market is filled with the above-mentioned polyimide varnish C as the droplet discharge device 5Q. Then, the ink jet printer discharges the polyimide on the glass substrate. An amine precursor varnish (:, a line of about 5 〇 #m width is drawn. Thereafter, the coating film on the glass substrate is dried at a temperature of 13{rc for 1 minute. The coating film formed by drawing and drying is formed. The thickness is 〇. 5#出. Next, the above-mentioned poly-labeled amine is first applied to the metal compound solution D at 25t: impregnation for 10 minutes to impregnate the metal ions in the polyimide precursor resin. After that, the polythene imine lion _ is pulled up from the metal compound solution, washed and dried. Applying the above-mentioned polyimine precursor precursor resin impregnated with metal ions to wet-reducting treatment with 3 (rc impregnated in 1 GmM aqueous solution of hydrogenated lysine for 1 minute, 59 97134815 200920873; surface of the coating of the tree A metal film is formed on the surface. The surface and cross section of the metal film are observed by an electron microscope (tank and TEM), and the film thickness of the metal film is dense and uniform, and the thickness of the film is more than U lGGnm. 4 capture, hinder $ to its full performance as a seed layer of Houbushe Electric Mine. Furthermore, the nickel layer of the glass substrate, in the copper electric mine bath, the current density of 2 5 A / dm2, A copper wiring layer having a copper film thickness and m is formed. The obtained copper wiring is formed into a glass substrate and heated in a nitrogen atmosphere to carry out the coating of the polyimide-coated precursor resin in the same manner for 5 minutes. Amination to form an ymine resin layer. Thereafter, the copper wiring is formed into a glass substrate and cooled to a normal temperature in a nitrogen atmosphere. The copper wiring forms a glass substrate, and the polyimide layer has a superior adhesion to the nickel layer. Through such a polyimide resin layer The nickel layer is used to firmly fix the copper wiring layer on the glass substrate. Further, the nickel layer and the copper wiring layer formed by using the same are free from defects and have excellent conduction performance. [Example 12] Test piece of 旭-100) manufactured by Asahi Glass Co., Ltd. 12. 5cmxl2. 5cm (thick Q. 7πιπι) was treated with 50 C of 5 Ν nitrogen oxide aqueous solution for 5 minutes. Secondly, the glass substrate of the test piece was washed with pure water. After drying, it was immersed in a 1% by weight aqueous solution of 7-APS. The glass substrate was taken out from the aqueous solution of 7-APS, and then dried and heated at 150 ° C for 5 minutes. The above-mentioned polyimide precursor varnish A was uniformly coated on the glass substrate, and dried at 130 ° C for 30 minutes. The thickness of the coating film formed by coating and drying was 2 #m. 97134815 60 200920873 Next, the above-mentioned Wei-imine precursor resin is used in the above-mentioned metal compound solution D in X 25 C / Å / Å for 1 minute to impregnate metal ions in the polyimide precursor resin. Thereafter, the polyimine precursor resin coating film was pulled from the metal compound solution and washed with water and dried. The above-mentioned metal ion imide precursor resin coating film is impregnated with 3 (rc / again: wet hydrogenation treatment in a lG mM hydrogenation aqueous solution for a minute to form a metal on the surface of the sap Thin film. Using electron microscope Na and TEM) to observe the surface and profile of the thin metal, it is true that the metal thin ship is dense and uniform and has a film thickness of more than 100 nm. Further, this metal ruthenium film was firmly adhered to the polyimide film of the polyimide precursor, and it was confirmed that it had sufficient properties as a seed layer for electroplating in the subsequent step. Further, the recording layer of the glass substrate was subjected to electric ore formation at a current density of 25 A/dm 2 in a copper coin bath to form a copper wiring layer having a copper film thickness of 2 G Am. The obtained copper wiring was formed into a glass substrate and heated to 3 G in a nitrogen atmosphere (TC), and the polyimine precursor resin constituting the coating film was subjected to hydrazine imidization to form a polyfluorene at a time of Q and 1 minute. The imide resin layer is formed, and then the copper wiring is formed into a glass substrate and cooled to a normal temperature in a nitrogen atmosphere. After the copper wire is laminated on the ore layer of the glass substrate, the dry film photoresist is laminated, and then exposed to ultraviolet light through the mask. Developing, forming a photoresist pattern with a wiring width/wiring interval (L/S)=20#m/30/zm丨 between 5〇_. The copper layer of the formed blank portion of the wiring is removed by rhyme, and then The polyimide resin is removed in the past to obtain a copper wiring to form a glass substrate. The copper wiring forms a glass substrate. The polyamido tree 97138815 61 200920873 The adhesion between the lipid layer and the nickel layer is excellent, and the copper wiring layer passes through the same. The polyimide layer and the recording layer are firmly fixed to the glass substrate. Further, the nickel layer and the copper wiring layer formed by using the same are free from defects and have excellent conduction performance. [Example 13] 〇g broken glass particles (M0RITEX company, Microspheres 424 (business Name) 'particle size distribution 5~50/zm) was dispersed in 50 N C 5N aqueous sodium hydroxide solution (500 mL) and stirred for 2 minutes. The glass fine particles were then filtered, washed with water, and dispersed in 1% by weight of T-APS aqueous solution ( After 500 mL), it was filtered, washed with water, and dried, and heated at 15 (TC for 5 minutes. The glass fine particles treated as described above were dispersed in 5 g of DMAc which made the polyimide varnish A diluted by 5 times by volume. In 10 ml of the solution, ethanol was added dropwise with stirring. After stirring for a while, the dispersion was filtered, washed with ethanol, dried, and heated at 13 μc for 1 minute to obtain glass fine particles M1 coated with the polyimide pigment precursor resin. Next, the above-mentioned polyimine-based resin-coated glass fine particles are dispersed in the metal compound solution D to be stirred at 25X for 1 minute. Thereafter, the dispersion is filtered, washed with water, and dried to obtain a coated impregnation. The glass microparticles of the polyimide ion-precursor resin having Ni ions are impregnated with the glass particles of the polyimidazolium precursor resin coated with the above-mentioned Ni ions, and dispersed in an aqueous solution of sodium borohydride of UhnM at a concentration of 3 Torr. 1 point Thereafter, the dispersion was dried, washed with water, and dried to obtain fine particles having a metal film of Mi. The microparticles having a metal thin film were observed by an optical microscope to confirm that they had a metallic luster. Further, electrons were observed by an electron microscope (SEM). Thin film particles 97138815 62 200920873 Subsurface, it was confirmed that the metal thin film was dense and continuous. [Example 14] As in Example 13, glass fine particles M2 coated with a polyimide pigment precursor resin were formed. Dispersion was carried out in a metal compound solution. In E, the mixture was stirred for 10 minutes at 25 ° C. Thereafter, the dispersion was filtered, washed with water, and dried to obtain glass fine particles coated with a polyimide ion impregnated resin impregnated with Ni ions. The above-mentioned Ni ions were impregnated with the glass microparticles coated with the polyamidene precursor resin, and dispersed in a 10 mM aqueous solution of sodium borohydride and stirred at 30 ° C for 1 minute. Thereafter, the dispersion was filtered, washed with water, and dried to obtain fine particles having a Ni metal thin film. The fine particles having a metal thin film were observed with an optical microscope to confirm that they had a metallic luster. [Example 15] As in Example 13, glass fine particles M3 coated with a polyimide pigment precursor resin were formed. This was dispersed in the metal compound solution F, and spoiled at 25 ° C for 1 minute. Thereafter, the dispersion was transferred, washed with water, and dried to obtain glass fine particles coated with a polyimide ion impregnated resin impregnated with Ni ions. The Ni ions were impregnated with the polyimide particles coated with the polyamidene precursor resin, dispersed in a 10 mM aqueous solution of sodium borohydride, and stirred at 3 (TC for 1 minute. Thereafter, the dispersion was filtered, washed with water, and dried to obtain Ni Microparticles of a metal thin film. Microparticles having a metal thin film were observed with an optical microscope, and it was confirmed that it had a metallic luster. [Example 16] 97134815 63 200920873 As in Example 13, glass microparticles M4 coated with a polyimide pigment precursor resin were formed. This was dispersed in the metal compound solution G, and stirred at 25 ° C for 10 minutes. - Thereafter, the dispersion was filtered, washed with water, and dried to obtain glass fine particles coated with a polyimide ion impregnated precursor resin impregnated with Ni ions. The Ni ions were impregnated with the polyimide particles coated with the polyamidene precursor resin, dispersed in a 10 mM aqueous solution of sodium borohydride, and stirred at 30 ° C for 1 minute. Thereafter, the dispersion was filtered, washed with water, and dried to obtain Fine particles of the Ni metal film f. The fine particles having the metal thin film were observed with an optical microscope, and it was confirmed that it had metallic luster. [Example 17] The glass fine particles M5 coated with the polyimine precursor resin were formed as in Example 13. This was dispersed in the metal compound solution I at 25. (: stirring for 10 minutes. Thereafter, the dispersion was filtered and washed with water, Drying, glass microparticles coated with a polyimide ion impregnated precursor resin impregnated with Cu ions are obtained. (j The above-mentioned Cu ions are impregnated with the polyimide particles coated with the polyamidene precursor resin, and dispersed in a 10 mM aqueous solution of sodium hydride hydride. The mixture was mixed with 3 (TC for 1 minute. Thereafter, the dispersion was filtered, washed with water, and dried to obtain fine particles having a Cu metal thin film. The fine particles having a metal thin film were observed by an optical microscope, and it was confirmed that the metal fineness was observed. [Example 18 The glass fine particles M6 coated with the polyimide precursor resin were formed as in Example 13 and dispersed in the metal compound solution j, and stirred at 25 ° C for 10 minutes. 97134815 64 200920873 Thereafter, the dispersion was filtered and It is washed with water and dried to obtain glass fine particles coated with a polyimine precursor resin impregnated with Cu ions. - The above-mentioned Cu ions are impregnated with a polyimide resin. The glass fine particles were dispersed in a 10 mM aqueous solution of sodium borohydride and stirred at 30 ° C for 1 minute. Thereafter, the dispersion was filtered, washed with water, and dried to obtain fine particles having a Cu metal film. The fine particles of ruthenium were confirmed to have a metallic luster. f [Example 19] Glass fine particles M7 coated with a polyimide pigment precursor resin were formed as in Example 13. This was dispersed in a metal compound solution L at 25. (: stirring for 10 minutes. Thereafter, the dispersion was filtered, washed with water, and dried to obtain glass fine particles coated with a polyimine precursor precursor resin impregnated with Ag ions. The above Ag ions were impregnated with the polyimide particles coated with the polyamidene precursor resin, dispersed in a 10 mM aqueous solution of sodium borohydride, and stirred at 30 ° C for 1 minute. Thereafter, (_./, the dispersion was filtered, washed with water, and dried to obtain fine particles having a metal film of Ag. The fine particles having a metal thin film were observed with an optical microscope, and it was confirmed that the metal particles had a metallic luster. [Example 20] The glass fine particles M8 coated with the polyimine precursor resin were formed, and dispersed in a metal compound solution crucible 'stirred at 25 ° C for 10 minutes. Thereafter, the dispersion was filtered, washed with water, and dried to obtain a coating. Glass microparticles impregnated with a poly(imine) precursor resin of Ag ions. 97134815 65 200920873 The above Ag ions are impregnated with a polyimide film coated with a polyamidene precursor resin, dispersed in a 10 mM aqueous solution of sodium borohydride and at a temperature of 3 〇. c. The mixture was stirred for 1 minute. Thereafter, the dispersion was dried, washed with water, and dried to obtain fine particles having a metal film of Ag. The fine particles having a metal thin film were observed with an optical microscope, and it was confirmed that it had metallic luster. [Example 21] In Example 13, a glass fine particle M9 coated with a polyimine precursor resin was formed, which was dispersed in a metal compound solution N and stirred at 25 ° C. After that, the dispersion was filtered, washed with water, and dried to obtain glass fine particles coated with a polyimine precursor precursor resin impregnated with Ag ions. The Ag ion was impregnated with a polyimide resin precursor resin. The glass fine particles were dispersed in a 10 mM aqueous solution of sodium borohydride and stirred for 3 minutes at 3 Torr. Thereafter, the dispersion was filtered, washed with water, and dried to obtain fine particles of a metal film of Ag. The film having a metal film was observed using an optical microscope. The fine particles were confirmed to have a metallic luster. [Comparative Example 4] Glass fine particles coated with a polyimide pigment precursor resin were formed as in Example 13. This was dispersed in a 100 mM aqueous solution of nickel acetate, and stirred at 25 ° C for 10 minutes. Thereafter, the dispersion is transferred, washed with water, and dried to obtain glass fine particles coated with a polyimide ion impregnated precursor resin impregnated with Ni ions. The Ni ions are impregnated with the glass fine particles coated with the polyimide polyimide precursor resin. Disperse in 10 mM hydrogenated shed aqueous solution and mix it for 3 minutes with 3 Torr. Thereafter, 97134815 66 200920873 The dispersion was filtered, washed with water and dried. Micro-black particles were obtained. Although observed by an optical microscope, no metal light was observed on the surface of the obtained fine particles. - [Comparative Example 5] As in Example 13, a glass coated with a polyimide pigment precursor resin was formed. The microparticles are dispersed in a metal compound solution crucible at 25° (:: 10 minutes of mixing. Thereafter, the dispersion is filtered, washed with water, and dried to obtain a coated impregnated ('Ni ion-based polyimine) The glass fine particles of the resin impregnated with the above-mentioned Ni ions are dispersed in a 10 mM aqueous solution of sodium borohydride and stirred at 3 (TC for 1 minute. Thereafter, the dispersion is filtered, Washed and dried to get white particles. At the time of the reduction treatment, there was no metal reduction on the surface of the fine particles, and even when observed by an optical microscope, the presence of the metal thin film was not confirmed on the surface of the obtained fine particles. [Comparative Example 6] C. As in Example 13, glass fine particles coated with a polyimide pigment precursor resin were formed. This was dispersed in a metal compound solution K and mixed at 25 ° C for 10 minutes. Thereafter, the dispersion was filtered, washed with water, and dried to obtain glass fine particles coated with a polyimide ion impregnated resin impregnated with Cu ions. The Cu ions were impregnated with the polyimide particles coated with the polyamidene precursor resin, dispersed in a 10 mM aqueous solution of sodium borohydride, and stirred for 3 minutes at 3 (rc). Thereafter, the dispersion was filtered, washed with water, and dried to obtain a white color. In the case of the reduction treatment, there was no metal reduction on the surface of the fine particles, and even if observed by an optical microscope at 97138815 67 200920873, the presence of the metal thin film was not confirmed on the surface of the obtained fine particles. The above Examples 13 to 21 and Comparative Example 4 were The results of the integration of 6 are shown in Table 2.

I 97134815 68 200920873 (表2) 金屬化合物溶液 言帽 金屬 標準電極電位 含氮化合物 平衡常數 pH 膜狀態 實施例13 Ni -0. 228 氨 2. 36 10. 35 金屬光澤•緻密 實施例14 Ni -0.228 二乙醇胺 3.31 9.82 金屬光澤 實施例15 Ni -0. 228 乙醇胺 2. 98 10.52 金屬光澤 實施例16 Ni -0.228 二乙基月安 2. 78 11.30 金屬光澤 實施例17 Cu 0.337 氨 4.27 10.25 金屬光澤 實施例18 Cu 0. 337 二乙醇胺 4.75 9.75 金屬光澤 實施例19 Ag 0.7991 氨 3.315 10.02 金屬光澤 實施例20 Ag 0. 7991 二乙醇胺 3.48 9.35 金屬光澤 實施例21 Ag 0.7991 乙二胺 4. 70 10.22 金屬光澤 比較例4 Ni -0. 228 — — 7. 22 無光澤 比車交例5 Ni -0.228 乙二胺 7.35 10.89 不形成 比較例6 Cu 0.337 乙二胺 10.54 10. 68 不形成 ί. 97134815 69 200920873 [實施例22] 將10g玻璃微粒子(M0RITEX公司製,Microspheres 424(商 品名),粒度分佈5〜50#m)分散於5(TC之5N氫氧化鈉水溶液 (500mL)並攪拌2分鐘。接著將玻璃微粒子過濾、水洗,分散 於1重量%之T-APS水溶液(500mL)中。其後進行過濾、水洗、 乾燥,以150°C加熱5分鐘。 將經上述處理之玻璃微粒子〇.5g分散於使聚醯亞胺先質清 漆A依體積比5倍稀釋之DMAc溶液ΙΟιηΐ中,在攪拌之下滴下 添加乙醇100ml。攪拌1〇分鐘後,將此分散液過濾’以乙醇 洗淨後乾燥,以130°C加熱10分鐘,得到被覆了聚醯亞胺先 質樹脂之玻璃微粒子。 其次,將上述聚醯亞胺先質樹脂被覆之玻璃微粒子分散於金 屬化合物溶液D中,以25t攪拌10分鐘。其後,將分散液過 濾並予以水洗、乾燥,得到被覆了含浸有Ni離子之聚醯亞胺 先質樹脂的玻璃微粒子。 將上述Ni離子含浸聚醯亞胺先質樹脂被覆之玻璃微粒子, 分散於10mM之氫化硼鈉水溶液中並以3〇°c攪拌1分鐘。其後, 將分散液過濾,以1〇重量%之草酸水溶液進行酸處理後,予以 水洗、乾燥,得到具有Ni被膜之微粒子。 將上述Ni被膜之微粒子於氮環境下以30(TC加熱5分鐘, 進行醯亞胺化,而得到Ni被膜聚醯亞胺微粒子叽〇。 於上述Ni被膜聚醯亞胺微粒子表面上,使用電鍍裝置(上村 97134815 70 200920873 工業公司製,Flow-Through Platers RP-1(商品名)),於鍍焊 浴中以lA/dm2之電流密度進行電鍍,形成焊料(重量比:I 97134815 68 200920873 (Table 2) Metal Compound Solution Cap Metal Standard Electrode Potential Nitrogen Compound Equilibrium Constant pH Film State Example 13 Ni -0. 228 Ammonia 2. 36 10. 35 Metallic Luster • Compact Example 14 Ni -0.228 Diethanolamine 3.31 9.82 Metallic luster Example 15 Ni -0. 228 Ethanolamine 2. 98 10.52 Metallic luster Example 16 Ni -0.228 Diethyl lunaran 2. 78 11.30 Metal luster Example 17 Cu 0.337 ammonia 4.27 10.25 Metal luster example 18 Cu 0. 337 Diethanolamine 4.75 9.75 Metallic gloss Example 19 Ag 0.7991 Ammonia 3.315 10.02 Metallic gloss Example 20 Ag 0. 7991 Diethanolamine 3.48 9.35 Metallic gloss Example 21 Ag 0.7991 Ethylenediamine 4. 70 10.22 Metallic gloss Comparative Example 4 Ni -0. 228 — — 7. 22 Matte ratio car exchange Example 5 Ni -0.228 Ethylenediamine 7.35 10.89 No formation of Comparative Example 6 Cu 0.337 Ethylenediamine 10.54 10. 68 Not formed ί. 97134815 69 200920873 [Examples 22] Disperse 10 g of glass fine particles (Molecular 424 (trade name) manufactured by M0RITEX Co., Ltd., particle size distribution 5 to 50 #m) in 5 (TC 5 N sodium hydroxide aqueous solution (500 mL) and The mixture was mixed for 2 minutes, and then the glass fine particles were filtered, washed with water, and dispersed in a 1% by weight aqueous solution of T-APS (500 mL), followed by filtration, washing with water, and drying, and heating at 150 ° C for 5 minutes. 5 g of microparticles were dispersed in a DMAc solution ΙΟιηΐ which was diluted with 5-fold by volume of the polyimide varnish A, and 100 ml of ethanol was added dropwise with stirring. After stirring for 1 minute, the dispersion was filtered. After washing, it is dried and heated at 130 ° C for 10 minutes to obtain glass fine particles coated with a polyimide pigment precursor resin. Next, the above-mentioned polyimide particles coated with the polyimide resin are dispersed in the metal compound solution D. The mixture was stirred at 25 t for 10 minutes. Thereafter, the dispersion was filtered, washed with water, and dried to obtain glass fine particles coated with a polyimide ion impregnated precursor resin impregnated with Ni ions. The above Ni ion was impregnated with a polyimine precursor resin. The coated glass fine particles were dispersed in a 10 mM aqueous solution of sodium borohydride and stirred at 3 ° C for 1 minute. Thereafter, the dispersion was filtered and acid-treated with 1% by weight of an aqueous solution of oxalic acid. It was washed with water and dried to obtain fine particles having a Ni film. The fine particles of the above-mentioned Ni film were subjected to argonization at 30 (TC) for 5 minutes in a nitrogen atmosphere to obtain Ni-coated polyimide microparticles. On the surface of the above-mentioned Ni-coated polyimide microparticles, electroplating was used. The device (Shangsho 97138815 70 200920873 Industrial Co., Ltd., Flow-Through Platers RP-1 (trade name)) was electroplated at a current density of 1 A/dm 2 in a plating bath to form a solder (weight ratio:

Pb/Sn=60/40)膜厚1 # m之鍍焊層。 [實施例23] 如同實施例22,得到具有Ni被膜之微粒子,予以醯亞胺化, 而得到Ni被膜聚醯亞胺微粒子M11。將其分散於無電解鑛鎳 液(奥野製藥公司製,TOP NIC0R0N T0M-S(商品名),5倍稀 〇釋)(1000mL)中,以80°C授拌5分鐘。其後,將分散液過遽並 以純水洗淨後乾燥,得到Ni被膜微粒子M11,。將上述Ni被 膜微粒子M11’(10§)分散於取代鍍金液(Meltex製Melplate AU-601(商品名)’ 1〇倍稀釋)(1〇〇〇mL)中,以75。匚攪拌5分鐘。 其後,將分散液過濾並以純水洗淨後乾燥,得到金屬被膜聚醯 亞胺微粒子。 [實施例24] U 將於25ml丙酮中溶解了 2mml〇1(436mg)之pMDA之溶液與於 25ml丙酮中溶解了 2mm〇i(4〇〇mg)之〇dA之溶液分別加溫至4〇 C。混合此溶液,依4(rc、1〇分鐘照射超音波(超音波洗淨機, 頻率42KHz),而成為於溶液中析出了聚醯胺酸微粒子之懸濁 狀悲的丙酮溶液。將溶液過濾並以丙酮洗淨,得到785mg之聚 酿胺酸微粒子M12。所得之聚醯胺酸微粒子為3〇〇〜6〇〇nm之球 狀微粒子。Pb/Sn=60/40) plating thickness of 1 #m. [Example 23] As in Example 22, fine particles having a Ni film were obtained, which were imidized to obtain Ni-coated polyimine fine particles M11. This was dispersed in an electroless nickel bath (manufactured by Okuno Pharmaceutical Co., Ltd., TOP NIC0R0N T0M-S (trade name), 5 times diluted) (1000 mL), and mixed at 80 ° C for 5 minutes. Thereafter, the dispersion was passed through, washed with pure water, and dried to obtain Ni film fine particles M11. The above-mentioned Ni film fine particles M11' (10 §) were dispersed in a substitution gold plating solution (Melplate AU-601 (trade name) manufactured by Meltex) (1 〇〇〇 mL) to obtain 75. Stir for 5 minutes. Thereafter, the dispersion was filtered, washed with pure water, and dried to obtain metal film-coated polyimine fine particles. [Example 24] U A solution of 2 mml of 〇1 (436 mg) of pMDA dissolved in 25 ml of acetone and a solution of 2 mm 〇i (4 〇〇 mg) of 〇dA dissolved in 25 ml of acetone were respectively heated to 4 〇. C. This solution was mixed and irradiated with ultrasonic waves (ultrasonic washing machine, frequency 42 KHz) at 4 (rc, 1 minute) to form a suspension-like acetone solution in which poly-proline fine particles were precipitated in the solution. The mixture was washed with acetone to obtain 785 mg of polyacrylic acid microparticles M12. The obtained polyamic acid microparticles were spherical microparticles of 3 〇〇 to 6 〇〇 nm.

其次’將上述聚醯胺酸微粒子M12分散於金屬化合物溶液D 97134815 71 200920873 中’以25 C攪拌iq分鐘。其後’將分散液過遽、水洗、乾燥, 得到含浸有Ni離子之聚醯胺酸微粒子。 將此含浸有Ni離子之聚醯胺酸微粒子,分散於i〇mM之氫化 硼鈉水溶液中並以30。(:攪拌丨分鐘。其後,將分散液過濾、 水洗、乾燥’得到具有Ni金屬薄膜之微粒子。對此微粒子使 用場效發射式掃瞄電子顯微鏡(FE-SEM)以倍率5萬倍進行觀 察’評價金屬薄膜之偏差’結果確認到無偏差。 尚且,於此所謂「無偏差」,係指觀察20個微粒子時,20 個微粒子全部形成了連續之金屬薄膜。又,於以下記載之某金 屬薄膜之偏差評價中,所謂「金屬薄膜之偏差小」係指於微粒 子20個中金屬薄膜未連續者存在1〜2個,所謂「金屬薄膜 之偏差大」係指於微粒子20個中,金屬薄膜未連續者存在3 個以上。 [實施例25] 如同實施例24,形成聚醯胺酸微粒子M13。將其分散於金屬 化合物溶液E中’以251:繼1G分鐘。其後,將分散液過濾、 水洗、乾燥,得到含浸有Ni離子之聚醯胺酸微粒子。 將上述含浸有Mi離子之聚醢胺酸微粒子,分散於麗之氮 化硼鈉水溶液中並以啊娜丨分鐘。其後,將分散液過遽、 水洗、乾燥,得到具有Ni金屬薄膜之微粒子1此微粒子使 用場效發糾_電子顯微鏡(FE_SEM)進行·,評價金屬薄 膜之偏差,結果確認到無偏差。 97134815 72 200920873 [實施例26] 如同實施例24,形成聚醯胺酸微粒子M14。將其分散於金屬 化合物溶液F中,以25t擾拌10分鐘。其後,將分散液過遽、 水洗、乾燥’得到含浸有Ni離子之雜胺酸微粒子。 將上述含浸有Ni離子之聚醯胺酸微粒子,分散於ΙΟπιΜ之氫 化刪納水驗中並以3〇°C擾拌1分鐘。其後,將分散液過滤、 水洗、乾燥,得到具有Ni金屬薄膜之微粒子。對此微粒子使 (S %效發射场晦電子顯微鏡(FE—)進行觀察,評價金屬薄 膜之偏差,結果確認到無偏差。 [實施例27] 如同實施例24,形成聚醯胺酸微粒子M15。將其分散於金屬 化口物冷液G中’以25ΐ授拌1〇分鐘。其後,將分散液過遽、 水洗、乾燥’得到含浸有Ni離子之聚醯胺酸微粒子。 將此含浸有Ni離子之聚酿胺酸微粒子,分散於細之氫化 G确水溶液中並以3Gt攪拌丨分鐘。其後,將分散液過滤、 水洗乾燦得到具有Ni金屬薄膜之微粒子。對此微粒子使 用場效發射式掃瞒電子顯微鏡(FE_SEM)進行觀察,評價金屬薄 膜之偏差’結果確認到偏差小。 [實施例28] 如同實細例24 ’形成聚醯胺酸微粒子则。將其分散於金屬 化合物溶液1中,以阶攪拌10分鐘。其後,將分散液過滤、 水洗、乾燥’得到含浸有Cu離子之聚蕴胺_粒子。 97134815 73 200920873 將此含浸有CU離子之聚醯胺酸微粒子,分散於1〇mM之氫化 蝴納水令液中moc觀丰1分鐘。其後,將分散液過滤、 水洗、乾燥,得到具有Cu金屬薄膜之微粒子。對此微粒子使 .用場效發射式掃目㈣子顯微鏡(FE-SEM)進行觀察,評價金屬薄 膜之偏差,結果確認到偏差小。 [實施例29] 如同實施例24,形成聚醯胺酸微粒子M17。將其分散於金屬 〇化合物溶液J中,以25t攪拌1〇分鐘。其後,將分散液過滤、 水洗乾燥彳〇彳含⑦有Qj離子之聚醯胺酸微粒子^ 將此3 π有Cu離子之聚醯胺酸微粒子,分散於1〇mM之氫化 石朋納水溶液巾細3代勝1分鐘。其後,將分散液過遽、 水洗乾燥,得到具有Cu金屬薄膜之微粒子。對此微粒子使 用琢放如射式掃陁電子顯微鏡進行觀察,評價金屬薄 膜之偏差,結果確認到偏差小。 Ο [實施例30] 如同實施例24,形成聚醯胺酸微粒子M18。將其分散於金屬 化口物/奋液L中’以25。(:授拌1〇分鐘。其後,將分散液過濾、 水洗、乾燥’得到含浸有Ag離子之聚醯胺酸微粒子。 將此含浸有Ag離子之聚_酸微粒子,分散於麗之氮化 硼鈉水溶液巾紅3(rc·丨分鐘。其後,將分散液過滤、 水洗乾燥’、得到具有Ag金屬帛膜之微粒子。對此微粒子使 用场效發射式掃晦電子顯微鏡(FE_SEM)進行觀察,評價金屬薄 97134815 74 200920873 膜之偏差,結果確認到偏差小。 [實施例31] 如同實施例24,形成聚醯胺酸微粒子M19。將其分散於金屬 化合物溶液Μ中,以25°C攪拌10分鐘。其後,將分散液過濾、 水洗、乾燥,得到含浸有Ag離子之聚醯胺酸微粒子。 將此含浸有Ag離子之聚醯胺酸微粒子,分散於1〇禮之氫化 刪納水溶液中並以3代_ 1分鐘。其後,將分散液過滤、 水洗、乾燥,,得到具有Ag金屬薄膜之微粒子。對此微粒子使 用場效發射式㈣電子顯微鏡(FE-SEM)進行觀察,評價金屬薄 膜之偏差,結果確認到偏差小。 [實施例32] 如同實施例24,形成聚醯胺酸微粒子M20。將其分散於金屬 化合物溶液N中,、 令 25 c攪拌10分鐘。其後,將分散液過濾、 水洗乾燥’相含浸有Ag離子之練麟微粒子。 、3 x有Ag離子之聚醯胺酸微粒子,分散於10mM之氫化 養水溶液^ 3_拌1讀。其後,將分散液過遽、 水洗、乾燥’得5丨目士 _ 到八有Ag金屬薄膜之微粒子。對此微粒子使 \、式姆瞒電子顯微鏡(FE-SEM)進行觀察,評價金屬薄 膜之偏差,結果確認顺^、。 、 [比較例7] 如同實施例W w δΜ鉾,城雜胺酸微粒子。將其分散於100mM 酉曰酸錄水《中,以阶攪拌10分鐘。其後,將分散液過滤、 97134815 75 200920873 水洗、乾燥,得到含浸有Ni離子之聚醯胺酸微粒子。 將此含浸有Ni離子之聚醯胺酸微粒子,分散於1〇mM之氫化 鄉納水溶液中並以30〇C攪拌1分鐘。其後,將分散液過濾、 水洗、乾燥,得到微黑色之微粒子。若使用電子顯微鏡(FE_SEM) 進行觀察,確認到金屬微粒子點狀分佈於微粒子表面,金屬層 不連續。 [比較例8] 如同實施例24,形成聚醢胺酸微粒子。將其分散於金屬化 合物溶液Η中’以25。⑽拌1Q分鐘。其後,將分散液過滤、 水洗、乾燥,得到含浸有則離子之聚醯胺酸微粒子。 將此含浸有Ni離子之聚醯胺酸微粒子,分散於1〇mM之氫化 确水溶液巾紅3G。⑽拌丨分鐘。其後,將分散液過滤、 水洗乾燥’得到白色之微粒子。於還原處理時,微粒子分散 液並無變色情況’即使以電子驗鏡⑽—識)進行觀察,於所 得之微粒子表面亦未確認到金屬薄膜之存在。 [比較例9] 如同實施例24,形成聚醯胺酸微粒子。將其分散於金屬化 合物溶液K巾’以抓攪拌1G分鐘。其後,將分散液過濾、 水洗、乾燥’得到含浸有Cu離子之聚醯胺酸微粒子。 將此含浸有CU離子之聚醯胺酸微粒子,分散於1〇mM之氫化 硼鈉水溶液中並以30°C攪拌1分鐘。其後,將分散液過濾、 水洗、乾燥,得到白色之微粒子。於還原處理時,微粒子分散 97134815 76 200920873 液並無變色情況,即使以電子顯微鏡(FE-SEM)進行觀察,於所 得之微粒子表面亦未確認到金屬薄膜之存在。 將上述實施例24〜32及比較例7〜9之結果整合示於表3。 (表3) 金屬化合物溶液 評價 金屬 標準電極電位 含氮化合物 平衡常數 pH 膜不連續者 (個/20個中) 實施例24 Ni -0. 228 氨 2. 36 10. 35 0 實施例25 Ni -0. 228 二乙醇胺 3. 31 9. 82 0 實施例26 Ni -0. 228 乙醇胺 2. 98 10. 52 0 實施例27 Ni -0.228 二乙基胺 2. 78 11. 30 1 實施例28 Cu 0. 337 氨 4. 27 10. 25 1 實施例29 Cu 0.337 二乙醇胺 4. 75 9. 75 2 實施例30 Ag 0. 7991 氨 3. 315 10. 02 0 實施例31 Ag 0.7991 二乙醇胺 3.48 9. 35 0 實施例32 Ag 0. 7991 乙二胺 4.70 10.22 2 比較例7 Ni -0. 228 — — 7. 22 20 比較例8 Ni -0.228 乙二胺 7. 35 10.89 20 比較例9 Cu 0. 337 乙二胺 10. 54 10.68 20Next, the above polyamic acid microparticles M12 were dispersed in a metal compound solution D 97134815 71 200920873' and stirred at 25 C for 1 minute. Thereafter, the dispersion was dried, washed with water, and dried to obtain fine particles of lysine impregnated with Ni ions. The polyaminic acid microparticles impregnated with Ni ions were dispersed in an aqueous solution of sodium borohydride of i mM and were at 30. (: stirring for a few minutes. Thereafter, the dispersion was filtered, washed with water, and dried to obtain fine particles having a Ni metal film. The fine particles were observed by a field emission scanning electron microscope (FE-SEM) at a magnification of 50,000 times. The result of the "evaluation of the deviation of the metal film" was confirmed to be non-deviation. The term "no deviation" as used herein means that when 20 fine particles are observed, all of the 20 fine particles form a continuous metal thin film. In the evaluation of the deviation of the film, the term "small variation in the metal film" means that there are 1 or 2 metal film discontinuous in the 20 fine particles, and the "large deviation of the metal film" means that the metal film is 20 pieces. There were three or more discontinuous ones. [Example 25] As in Example 24, polyamic acid microparticles M13 were formed. Disperse it in the metal compound solution E' at 251: followed by 1 G minutes. Thereafter, the dispersion was filtered. Washing and drying to obtain polyamic acid microparticles impregnated with Ni ions. Dispersing the above-mentioned polyaminic acid microparticles impregnated with Mi ions in an aqueous solution of sodium boron nitride After that, the dispersion was dried, washed with water, and dried to obtain fine particles having a Ni metal thin film. The fine particles were evaluated by field effect correction (electron microscopy (FE_SEM)), and the deviation of the metal thin film was evaluated. 97134815 72 200920873 [Example 26] Poly-proline fine particle M14 was formed as in Example 24. This was dispersed in the metal compound solution F, and spoiled at 25 t for 10 minutes. Thereafter, the dispersion was passed.遽, Washing, and drying' to obtain micro-islanded acid microparticles impregnated with Ni ions. The above-mentioned poly-proline microparticles impregnated with Ni ions are dispersed in a hydrogenation-removed water test of ΙΟπιΜ and scrambled at 3 ° C for 1 minute. Then, the dispersion was filtered, washed with water, and dried to obtain fine particles having a Ni metal thin film. The fine particles were observed by an electron microscope (FE-), and the deviation of the metal thin film was evaluated. [Example 27] As in Example 24, polyamic acid microparticles M15 were formed. Disperse it in metallization mouth cold liquid G, and stir it for 25 minutes at 25 Torr. Thereafter, the dispersion was passed. , washing with water, drying 'to obtain micronized phosphatic acid microparticles impregnated with Ni ions. The polyacrylic acid microparticles impregnated with Ni ions are dispersed in a fine hydrogenated G aqueous solution and stirred for 3 minutes at 3 Gt. Thereafter, The dispersion was filtered and washed with water to obtain fine particles having a Ni metal thin film. The fine particles were observed using a field emission-emission scanning electron microscope (FE_SEM), and the deviation of the metal thin film was evaluated. As a result, it was confirmed that the deviation was small. [Example 28] As in the case of the actual example 24' formation of polyamic acid microparticles, it was dispersed in the metal compound solution 1, and stirred for 10 minutes. Thereafter, the dispersion was filtered, washed with water, and dried to obtain a concentration of impregnated with Cu ions. Amine _ particles. 97134815 73 200920873 The poly-prolyl microparticles impregnated with CU ions were dispersed in a 1 mM hydrogenated halogen water solution for 1 minute. Thereafter, the dispersion was filtered, washed with water, and dried to obtain fine particles having a Cu metal thin film. On the other hand, the fine particles were observed by a field emission type (four) sub-microscope (FE-SEM), and the deviation of the metal film was evaluated. As a result, it was confirmed that the deviation was small. [Example 29] As in Example 24, polyamic acid microparticles M17 were formed. This was dispersed in a metal ruthenium compound solution J, and stirred at 25 t for 1 Torr. Thereafter, the dispersion is filtered, washed with water, and contains 7 poly-proline microparticles having Qj ions. The 3 π poly-proline microparticles having Cu ions are dispersed in a 1 mM hydrogenated stone solution. The towel is 3 generations and wins 1 minute. Thereafter, the dispersion was dried and washed with water to obtain fine particles having a Cu metal film. The fine particles were observed by a blasting electron microscope using a sputum, and the deviation of the metal film was evaluated. As a result, it was confirmed that the deviation was small. Ο [Example 30] As in Example 24, polyamic acid microparticles M18 were formed. Disperse it in the metallization / Fen liquid L ' at 25. (: Mixing for 1 minute. Thereafter, the dispersion is filtered, washed with water, and dried to obtain fine particles of polyaminic acid impregnated with Ag ions. The poly-acid microparticles impregnated with Ag ions are dispersed in the nitriding of Li The aqueous solution of sodium borohydride was reddish 3 (rc·丨 min. Thereafter, the dispersion was filtered, washed with water and dried) to obtain fine particles having an Ag metal ruthenium film. The microparticles were observed using a field emission bounce electron microscope (FE_SEM). Evaluation of the deviation of the film of the thin metal 97138815 74 200920873, and it was confirmed that the deviation was small. [Example 31] Polyuric acid microparticles M19 were formed as in Example 24. This was dispersed in a metal compound solution crucible and stirred at 25 ° C. After 10 minutes, the dispersion was filtered, washed with water, and dried to obtain poly-proline microparticles impregnated with Ag ions. The poly-proline microparticles impregnated with Ag ions were dispersed in a hydrogenated aqueous solution of 1 〇 之The mixture was filtered for 3 days for 1 minute. Thereafter, the dispersion was filtered, washed with water, and dried to obtain fine particles having a metal film of Ag. The microparticles were observed using a field emission (IV) electron microscope (FE-SEM). When the deviation of the metal thin film was evaluated, it was confirmed that the deviation was small. [Example 32] Polyuric acid microparticles M20 were formed as in Example 24. This was dispersed in the metal compound solution N, and 25 c was stirred for 10 minutes. After that, the dispersion is filtered, washed with water and dried, and the phase is impregnated with Ag ions. The 3 x polyphosphonic acid microparticles with Ag ions are dispersed in a 10 mM hydrogenation aqueous solution ^ 3_mix 1 reading. Thereafter, The dispersion was subjected to hydrazine, water washing, and drying to obtain fine particles of Ag metal film. The microparticles were observed by an electron microscope (FE-SEM) to evaluate the deviation of the metal film. As a result, it was confirmed that [Comparative Example 7] was as in the example W w δ Μ鉾, city hetero-acid fine particles. Disperse it in 100 mM citric acid water, and stir for 10 minutes. Thereafter, it was dispersed. Liquid filtration, 97134815 75 200920873 Washed and dried to obtain poly-proline microparticles impregnated with Ni ions. The poly-proline microparticles impregnated with Ni ions were dispersed in a 1 mM hydrogenation aqueous solution and 30 〇. C is stirred for 1 minute. The dispersion was filtered, washed with water, and dried to obtain fine black particles. When observed by an electron microscope (FE_SEM), it was confirmed that the metal fine particles were distributed on the surface of the fine particles, and the metal layer was discontinuous. [Comparative Example 8] 24, forming poly-proline microparticles. Dispersing it in a metal compound solution ' 'mixed with 25 (10) for 1Q minutes. Thereafter, the dispersion is filtered, washed with water, and dried to obtain a poly-proline microparticle impregnated with ions. The polyaminic acid microparticles impregnated with Ni ions were dispersed in 1 mM hydrogenated aqueous solution 3G. (10) Mix for a minute. Thereafter, the dispersion was filtered, washed with water to give white fine particles. At the time of the reduction treatment, the fine particle dispersion did not change color. Even if it was observed by electron inspection (10), the presence of the metal thin film was not confirmed on the surface of the obtained fine particles. [Comparative Example 9] As in Example 24, polyamic acid microparticles were formed. This was dispersed in a metal compound solution K towel to stir for 1 G minutes. Thereafter, the dispersion was filtered, washed with water, and dried to obtain fine particles of polyaminic acid impregnated with Cu ions. The polyamic acid microparticles impregnated with CU ions were dispersed in a 1 mM sodium borohydride aqueous solution and stirred at 30 ° C for 1 minute. Thereafter, the dispersion was filtered, washed with water, and dried to obtain white fine particles. At the time of reduction treatment, fine particles were dispersed. 97134815 76 200920873 The liquid was not discolored, and even when observed by an electron microscope (FE-SEM), the presence of a metal thin film was not confirmed on the surface of the obtained fine particles. The results of the above Examples 24 to 32 and Comparative Examples 7 to 9 are shown in Table 3. (Table 3) Evaluation of metal compound solution Metal standard electrode potential Nitrogen compound equilibrium constant pH film discontinuity (in / 20) Example 24 Ni -0. 228 Ammonia 2. 36 10. 35 0 Example 25 Ni - 0. 228 Diethanolamine 3. 31 9. 82 0 Example 26 Ni -0. 228 Ethanolamine 2. 98 10. 52 0 Example 27 Ni -0.228 Diethylamine 2. 78 11. 30 1 Example 28 Cu 0 337 Ammonia 4. 27 10. 25 1 Example 29 Cu 0.337 Diethanolamine 4. 75 9. 75 2 Example 30 Ag 0. 7991 Ammonia 3. 315 10. 02 0 Example 31 Ag 0.7991 Diethanolamine 3.48 9. 35 0 Example 32 Ag 0. 7991 Ethylenediamine 4.70 10.22 2 Comparative Example 7 Ni -0. 228 — — 7. 22 20 Comparative Example 8 Ni -0.228 Ethylenediamine 7. 35 10.89 20 Comparative Example 9 Cu 0. 337 B Diamine 10.54 10.68 20

j 97134815 77 200920873 [實施例33] 將於25ml丙酮中溶解了 2mmlol(436mg)之PMDA之溶液與於 25ml丙酮中〉谷解了 2mm〇1(4〇〇mg)之〇DA之溶液分別加溫至 °c。混合此溶液,依4(rc、1〇分鐘照射超音波(超音波洗淨機, 頻率42KHz),而成為於溶液中析出了聚醯胺酸微粒子之懸濁 狀fe的丙酮溶液。將溶液减並以_洗淨,制?85呢之聚 S!胺酸微粒子。所得之㈣胺酸微粒子為綱〜咖·之球狀微 粒子。 其次,將上述聚醯胺酸微粒子分散於金屬化合物溶液D中, 以25°C攪拌10分鐘。將此含浸有附離子之聚醯胺酸微粒子, 分散於10mM之氫化硼鈉水溶液中並以3〇。〇攪拌1分鐘。其後, 將分散液過濾,以1〇重量%之草酸水溶液進行酸處理後,予以 水洗、乾燥,得到具有Ni被膜之微粒子。 將上述具有Νι被膜之微粒子於氮環境下以3〇〇。(::進行加熱5 分鐘,予以醯亞胺化而得到則被膜聚醯亞胺微粒子M21。 於上述Ni被膜聚醯亞胺微粒子mu表面上,使用電鍍裝置 (上村工業公司製,Flow-Through Platers RP-1(商品名)), 於鍍焊浴中以lA/dm2之電流密度進行電鍍,形成焊(重量比: Pb/Sn=60/40)膜厚1/zm之鑛焊層。 [實施例34] 如同實施例33,得到具有Ni被膜之微粒子,進行醯亞胺化 而得到Ni被膜聚醯亞胺微粒子M22。將其分散於無電解鍍鎳 97134815 78 200920873 液(奥野製藥公司製,TOP C0R0N ΤΟΜ-SC商品名),5倍稀 釋)(1000mL)中’以80〇C攪拌5分鐘。其後,將分散液過濾並 以純水洗淨後乾燥,得到Ni被膜微粒子M22,。 將上述Ni被膜微粒子M22’(10g)分散於取代鍍金液 (Meltex 製 Melplate AU-601C商品名),1〇 倍稀釋)(l〇〇〇mL) 中’以75°C攪拌5分鐘。其後,將分散液過濾並以純水洗淨 後乾燥’得到金屬被膜聚醯亞胺微粒子。 尚且,本發明並不限定於上述各實施形態,而可進行各種變 更。例如,於上述第卜第4實施形態中,雖於電鍍步驟後進 行醯亞胺化步驟,但亦可於電鍍步驟前實施醯亞胺化步驟。 另外,上述第1〜第4實施形態中,於含浸步驟後,亦可設 置以純水或離子交換水等所進行之水洗步驟(洗淨步驟)。 再者,上述第卜第3實施形態中,係於塗佈膜形成步驟中, 使用點膠機或具有液滴吐出喷頭之液滴吐出裝置將塗佈液依 既定圖案塗佈於絕緣基材上,形成經圖案化之塗佈膜。秋而, 於塗佈膜形齡财,可切塗佈液㈣至_紐整面上而 形成塗佈膜(所§胃「全塗」)’於電鍍後,設置糾步驟與化學 蝕刻步驟而將導體層加工為既定圖案。 (產業上之可利用性) 本發明可適合利用於例如在印刷饰線基板所代表之電路美 板之製造過財形成_鱗體叙目的,或於導電性微粒; 之製造過程中形成導電性金屬皮膜之目的。又,本發明除了用 97134815 79 200920873 於電路基板等以外,亦可廣泛利用於形成與聚酿亞胺樹脂之密 接性優越、且缺陷少之導體層的目的。 【圖式簡單說明】 ® 1絲林制實施雜之㈣層之形成料所應用之 電路基板之構成的說明圖。 圖2為放大表示圖丨所示之電路基板之主要部分的剖面圖。 圖3為表示本發明第i實施形態之導體層之形成方法的順序 ( 概要的流程圖。 圖4為用於說明本發明第丨實施形態之導體層之形成方法中 塗佈膜形成步驟的說明圖。 圖5為用於說明塗佈膜形成步驟後之塗佈膜狀態的說明圖。 圖6為用於說明含浸步驟後之塗佈膜狀態的說明圖。 圖7為用於說明金屬被膜形成步驟後之圖案化導體層狀態 的說明圖。 L 目8為用於獅麵步驟後之圖案化導體層狀態的說明圖。 圖9為用於說明酿亞胺化步驟後之圖案化導體層狀態的說 明圖。 圖10為表示本發明第2實施形態之導體層之形成方法的順 序概要的流程圖。 圖11為表示本發明第3實施形態之導體層之形成方法的順 序概要的流程圖。 圖12A為用於說明本發明第3實施形態之導體層之形成方法 97134815 200920873 中塗佈臈形成步驟的說明圖。 圖12B為用於說明本發明第3實施形態之導體層之形成方法 中塗佈膜形成步驟的說明圖。 圖13為表示本發明實施形態之導體層之形成方法所應用之 導電性微粒子之内部構造的剖面圖。 圖14為表示本發明第4實施形態之導體層之形成方法的順 序概要的流程圖。 圖15為用於說明樹脂被膜形成步驟後之球狀絕緣基材狀態 的說明圖。 圖16為用於說明含浸步驟後之球狀絕緣基材狀態的說明 圖。 圖17為用於說明金屬被膜形成步驟後之球狀絕緣基材狀態 的說明圖。 圖18為絲本發明實施職之賴層之形成綠所應用之 其他例子之導電性微粒子之㈣構朗剖面圖。 【主要元件符號說明】 I 電路基板 3 絕緣基材 5 圖案化導體層 7 聚醯亞胺樹脂層 9 金屬被膜 II 電鍍層 97134815 200920873 20 塗佈液 30 點膠機 40 塗佈膜 41 含浸層 50 液滴吐出裝置 100 導電性微粒子 103 球狀絕緣基材 105 聚醯亞胺樹脂層 107 導體層 109 金屬被膜 111 電鍍層 120 樹脂被膜 121 含浸層 200 導電性微粒子 97134815 82j 97134815 77 200920873 [Example 33] A solution of 2 mmol (436 mg) of PMDA dissolved in 25 ml of acetone was separately heated with a solution of 2 mm 〇 1 (4 〇〇 mg) of 〇DA in 25 ml of acetone. To °c. This solution was mixed and irradiated with ultrasonic waves (ultrasonic washing machine, frequency 42 KHz) at 4 (rc, 1 minute) to form an acetone solution in which a suspension of poly-proline fine particles was precipitated in the solution. And _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The mixture was stirred at 25 ° C for 10 minutes. The particles were impregnated with ionized polyamide microparticles, dispersed in a 10 mM aqueous solution of sodium borohydride and stirred at 3 Torr for 1 minute. Thereafter, the dispersion was filtered to The aqueous solution of oxalic acid in an amount of 1% by weight was subjected to an acid treatment, and then washed with water and dried to obtain fine particles having a Ni film. The fine particles having the above-mentioned film were placed in a nitrogen atmosphere at 3 Torr. (:: heating was carried out for 5 minutes, and 醯 was applied. The imidization of the film of the polyimine microparticles M21 is carried out on the surface of the above-mentioned Ni-coated polyimide microparticles using a plating apparatus (Flow-Through Platers RP-1 (trade name), manufactured by Uemura Kogyo Co., Ltd.). 1A in the plating bath The current density of /dm2 was electroplated to form a weld layer having a film thickness of 1/zm (weight ratio: Pb/Sn=60/40). [Example 34] As in Example 33, fine particles having a Ni film were obtained and carried out. The ruthenium is imidized to obtain Ni-coated polyimine fine particles M22, which is dispersed in electroless nickel plating 97138815 78 200920873 liquid (manufactured by Okuno Pharmaceutical Co., Ltd., TOP C0R0N ΤΟΜ-SC trade name), 5 times dilution) (1000 mL) 'The mixture was stirred at 80 ° C for 5 minutes. Thereafter, the dispersion was filtered, washed with pure water, and dried to obtain Ni film fine particles M22. The Ni film fine particles M22' (10 g) were dispersed in a substitution gold plating solution (Meltex system) Melplate AU-601C trade name), 1 〇 dilution) (l 〇〇〇 mL) in ' stirring at 75 ° C for 5 minutes. Thereafter, the dispersion was filtered, washed with pure water, and dried to obtain metal film-coated polyimine fine particles. Further, the present invention is not limited to the above embodiments, and various modifications can be made. For example, in the fourth embodiment described above, the ruthenium imidization step may be carried out after the electroplating step, but the ruthenium imidization step may be carried out before the electroplating step. Further, in the above-described first to fourth embodiments, after the impregnation step, a water washing step (washing step) performed by pure water or ion-exchanged water or the like may be provided. Further, in the third embodiment, in the coating film forming step, the coating liquid is applied to the insulating substrate in a predetermined pattern by using a dispenser or a droplet discharge device having a droplet discharge head. On top, a patterned coating film is formed. In the autumn, in the form of a coating film, the coating liquid (4) can be cut onto the entire surface of the coating to form a coating film (the "full coating" of the stomach). After the plating, a correction step and a chemical etching step are set. The conductor layer is processed into a predetermined pattern. (Industrial Applicability) The present invention can be suitably used for, for example, in the manufacture of a circuit board represented by a printed wiring board, or in the manufacture of conductive particles; The purpose of the metal film. Further, the present invention can be widely used for forming a conductor layer which is excellent in adhesion to a polyimide resin and has few defects, in addition to a circuit board or the like in the case of 97134815 79 200920873. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is an explanatory view showing the configuration of a circuit board to which a material for forming a (4) layer is formed. Fig. 2 is a cross-sectional view showing an enlarged main portion of the circuit board shown in Fig. 2; 3 is a flow chart showing the procedure of forming a conductor layer according to the first embodiment of the present invention. FIG. 4 is a view for explaining a step of forming a coating film in the method for forming a conductor layer according to the embodiment of the present invention. Fig. 5 is an explanatory view for explaining a state of a coating film after a coating film forming step, Fig. 6 is an explanatory view for explaining a state of a coating film after the impregnation step, and Fig. 7 is a view for explaining formation of a metal film. Explanation of the state of the patterned conductor layer after the step. L Head 8 is an explanatory diagram of the state of the patterned conductor layer after the lion face step. Fig. 9 is a view for explaining the state of the patterned conductor layer after the brewing imidization step Fig. 10 is a flow chart showing an outline of a procedure for forming a conductor layer according to a second embodiment of the present invention. Fig. 11 is a flow chart showing an outline of a procedure for forming a conductor layer according to a third embodiment of the present invention. Fig. 12A is an explanatory view for explaining a step of forming a coating of a conductive layer in a method of forming a conductor layer according to a third embodiment of the present invention. Fig. 12B is a view showing a shape of a conductor layer according to a third embodiment of the present invention. Fig. 13 is a cross-sectional view showing the internal structure of conductive fine particles applied to a method of forming a conductor layer according to an embodiment of the present invention. Fig. 14 is a view showing a conductor according to a fourth embodiment of the present invention. Fig. 15 is an explanatory view for explaining a state of the spherical insulating base material after the step of forming the resin film. Fig. 16 is a view for explaining the state of the spherical insulating base material after the impregnation step. Fig. 17 is an explanatory view for explaining a state of a spherical insulating base material after a metal film forming step. Fig. 18 is a view showing a conductive fine particle of another example of application of the green layer of the present invention. Cross-section of the structure. [Main component symbol description] I Circuit board 3 Insulation substrate 5 Patterned conductor layer 7 Polyimide resin layer 9 Metal film II Plating layer 97138815 200920873 20 Coating liquid 30 Dispenser 40 Coating film 41 Impregnated layer 50 Droplet discharge device 100 Conductive fine particles 103 Spherical insulating substrate 105 Polyimide resin layer 107 Conductor layer 109 Metal film 111 Electric Layer 120 layer 200 resin film 121 is impregnated with conductive fine particles 9713481582

Claims (1)

200920873 七、申請專利範圍: 1· -種導體層之形成方法’係於聚醯亞麟脂基材或聚釀亞 胺樹脂膜之表㈣成導體層者,其特徵為具備下述步驟·· 含浸步驟,係藉由含有含標準電極電位為-0.25至+1 55之 範圍内之金屬的金屬化合物、及與上述金狀離子間的錯合反 應之平衡常數為6以下之含氮化合物,且pH為9至Μ之範圍 内的金屬化合物溶液,對由屬於魏亞胺樹脂之先㈣聚酿亞 胺先質樹騎形叙級或襄行處理,喊上述金屬之離子 含浸至由上述聚醯亞贱質樹脂所形成之基材或膜的表声 中;以及 曰 /金屬被_成步驟,係將含浸於由上述聚醯亞胺先質樹脂所 开二成之基材或膜之表層t的上述金屬之離子進行彻處理,而 形成作為上述導體層之金屬被膜。 申》月專利|〖圍第1項之導體層之形鼓法,其中,上述 標準電極電位為iW之範_之金屬,係由Nl、Sn、 b Cu ^^'^'⑽^所組成群選擇之^種或之種以 3.如申請專利範圍第 含氮化合物為氨或者1 1項之導體層之形成方法,其中 級或2級胺。 上述 上述 上述 =物細丨項彻層⑽方法,其中 V體層為經圖案化之導體層。 5·如申請專利範㈣1項之導體層切衫法,其中 97134815 83 200920873 聚醯亞胺樹脂膜係形成於球狀絕緣基材之表面上。 6·如申請專利範圍第1項之導體層之形成方法,其中,上述 - 聚醯亞胺樹脂基材為球狀聚醯亞胺樹脂基材。 7. —種電路基板之製造方法,係具備絕緣基材與形成於該絕 緣基材上之導體層的電路基板之製造方法,其特徵為具備於上 述絕緣基材上形成上述導體層之步驟,此步驟含有: 塗佈膜形成步驟,係將含有聚醯亞胺先質樹脂之塗佈液塗佈 ( 至上述絕緣基材之表面上,並予以乾燥而形成塗佈膜; έ /文步驟,係將上述塗佈膜藉金屬化合物溶液進行處理,而 使δ亥浴液中之金屬離子含浸至上述塗佈膜表層中·,以及 金屬被膜形成步驟,係將含浸至上述塗佈膜表層中之金屬離 子進行還原處理’而形成作為上述導體層之金屬被膜; 上述金屬化合物溶液係含有含標準電極電位為_〇 25至 +1.55之範圍内之金屬的金屬化合物、以及與上述金屬之離子 間的錯合反應之平衡常數為6以下之含氮化合物,且係pH為 9至12之範圍内之溶液。 8. —種導電性微粒子之製造方法,係具備球狀絕緣基材與覆 蓋該球狀絕緣基材之導體層的導電性微粒子之製造方法,其特 徵為具備於上述球狀絕緣基材之表面形成上述導體層之步 驟,此步驟含有: 被膜形成步驟,係將含有聚醯亞胺先質樹脂之塗佈液塗佈至 上述球狀絕緣基材之表面上,並予以乾無而形成覆蓋該球狀絕 97134815 84 200920873 緣基材的樹脂被膜; 含浸步騾,係將上述樹脂被膜藉金屬化合物溶液進行處理, 而使該溶液中之金屬離子含浸至上述樹脂被膜之表層_;以及 金屬被膜形成步驟,係將含浸至上述樹脂被膜表層中之金屬 離子進行還原處理,而形成作為上述導體層之金屬被膜; 上述金屬化合物溶液係含有含標準電極電位為至 +1.55之範圍内之金屬的金屬化合物、及與上述金屬之離子間 f'的錯合反應之平衡常數為6以下之含氮化合物,且係pH為9 至12之範圍内之溶液。 9· -種導電性微粒子之製造方法,係具備球狀_亞胺樹脂 基材與覆盍3亥球狀聚酿亞胺樹脂基材之導體層的導電性微粒 子之製造方法,其特徵為具備於藉醯亞胺化而成為上述球狀聚 醯亞胺樹脂基材的聚醯亞胺先質樹脂之球狀粒子之表面形成 上述導體層之步驟,此步驟含有: t 含π步驟’係將上述球狀粒子之表面藉金屬彳b合物溶液進行 處理’而使該溶液巾之金屬離子含浸至上述球狀粒子之表層 中;以及 金屬被卿成步驟’係將含浸至上述球狀粒子表層中之金屬 離子請還縣理,㈣成作為上料體層之金屬被膜; 上述金屬化合物溶液係含有含標準電極電位為至 +1. 55之範ϋ内之金屬的金屬化合物、及與上述金屬之離子間 的錯合反應之平衡常數為6以下之含氮化合物且係邱為9 97134815 85 200920873 至12之範圍内之溶液。 10. —種導體層形成用組成物,係用於為了於聚醯亞胺樹脂 基材或聚醯亞胺樹脂膜之表面上形成導體層,而使金屬離子含 浸至由屬於聚醯亞胺樹脂先質之聚醯亞胺先質樹脂所形成之 基材或膜中的處理中者,其特徵為, 係含有含標準電極電位為-0.25至+1.55之範圍内之金屬的 金屬化合物、及與上述金屬之離子間的錯合反應之平衡常數為 6以下之含氮化合物,且係pH為9至12之範圍内。 C 97134815 86200920873 VII. Patent application scope: 1. The method for forming a kind of conductor layer is based on the surface of the polypyrene resin substrate or the polyimide resin film (4), which is characterized by the following steps: The impregnation step is a nitrogen-containing compound having an equilibrium constant of 6 or less by a metal compound containing a metal having a standard electrode potential in a range of -0.25 to +1 55, and a mismatch reaction with the gold ion. A solution of a metal compound having a pH in the range of 9 to Μ, which is subjected to the treatment of the first (four) polyanilin precursor tree belonging to the Wei-imine resin, and the ion impregnation of the above metal is impregnated to the above-mentioned polyfluorene The surface of the substrate or film formed by the resin; and the ruthenium/metal is immersed in the surface layer of the substrate or film which is opened by the above-mentioned polyimide resin precursor resin. The metal ions are subjected to a thorough treatment to form a metal film as the conductor layer.申》月专利|〗 〖The drum method of the conductor layer of the first item, wherein the above standard electrode potential is the metal of the iW, which is composed of Nl, Sn, b Cu ^^'^'(10)^ The method of forming a conductor layer, such as a grade or a grade 2 amine, is as described in the patent application. The above method for thin layer (10), wherein the V body layer is a patterned conductor layer. 5. The conductor layer cutting method of claim 1 (4), wherein 97134815 83 200920873 a polyimide film is formed on the surface of the spherical insulating substrate. 6. The method of forming a conductor layer according to the first aspect of the invention, wherein the poly-imine resin substrate is a spherical polyimide substrate. 7. A method of manufacturing a circuit board, comprising: a method of manufacturing a circuit board including an insulating base material and a conductor layer formed on the insulating base material, comprising the step of forming the conductor layer on the insulating base material; This step includes: a coating film forming step of applying a coating liquid containing a polyimide precursor resin (to the surface of the insulating substrate and drying to form a coating film; έ /文 step, The coating film is treated with a metal compound solution to impregnate metal ions in the δHeil bath into the surface layer of the coating film, and the metal film forming step is impregnated into the surface layer of the coating film. The metal ion is subjected to a reduction treatment to form a metal film as the conductor layer; and the metal compound solution contains a metal compound containing a metal having a standard electrode potential of _〇25 to +1.55, and an ion with the metal a nitrogen-containing compound having an equilibrium constant of 6 or less, and a solution having a pH in the range of 9 to 12. 8. A method for producing conductive fine particles, A method for producing a conductive fine particle comprising a spherical insulating substrate and a conductive layer covering the spherical insulating substrate, comprising the step of forming the conductive layer on a surface of the spherical insulating substrate, wherein the step comprises: In the film forming step, a coating liquid containing a polyimide precursor resin is applied onto the surface of the spherical insulating substrate, and dried to form a resin covering the spherical substrate 97112815 84 200920873 The film is impregnated by treating the resin film with a metal compound solution to impregnate the metal ions in the solution to the surface layer of the resin film; and the metal film forming step is performed by impregnating the surface of the resin film. The metal ion is subjected to a reduction treatment to form a metal film as the conductor layer; and the metal compound solution contains a metal compound containing a metal having a standard electrode potential of up to +1.55, and f' between the ion of the metal A nitrogen-containing compound having an equilibrium constant of 6 or less, and a solution having a pH in the range of 9 to 12. A method for producing conductive fine particles, which is a method for producing a conductive fine particle comprising a spherical-imine resin substrate and a conductor layer covering a 3 ichromeric polyimide resin substrate, and is characterized in that it is provided a step of forming the above-mentioned conductor layer on the surface of the spherical particles of the polyimine precursor resin which is imidized into the globular polyimide resin substrate, the step comprising: t containing the π step' The surface of the particle is treated by a metal ruthenium compound solution to impregnate the metal ions of the solution towel into the surface layer of the spherical particle; and the metal is immersed in the surface of the spherical particle The metal ion is also supplied to the county, and (4) is formed as a metal film of the upper body layer; the metal compound solution contains a metal compound containing a metal having a standard electrode potential of up to +1.55, and an ion with the metal The solution of the nitrogen-containing compound having an equilibrium constant of 6 or less is in the range of 9 97134815 85 200920873 to 12. 10. A composition for forming a conductor layer for impregnating metal ions into a polyimide resin layer for forming a conductor layer on a surface of a polyimide film or a polyimide film A metal substrate having a standard electrode potential of from -0.25 to +1.55, and a metal compound having a standard electrode potential of from -0.25 to +1.55, and a treatment in a substrate or a film formed of a precursor of a polyimine precursor resin The nitrogen-containing compound having an equilibrium constant of the mismatching reaction between the ions of the above metals is 6 or less, and is in the range of 9 to 12. C 97134815 86
TW097134815A 2007-09-11 2008-09-11 Method of forming a conductor layer, method of manufacturing a circuit board, method of manufacturing conductive fine particles, and composition for forming a conductor layer TWI458855B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007234853 2007-09-11

Publications (2)

Publication Number Publication Date
TW200920873A true TW200920873A (en) 2009-05-16
TWI458855B TWI458855B (en) 2014-11-01

Family

ID=40451948

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097134815A TWI458855B (en) 2007-09-11 2008-09-11 Method of forming a conductor layer, method of manufacturing a circuit board, method of manufacturing conductive fine particles, and composition for forming a conductor layer

Country Status (3)

Country Link
JP (1) JP5101623B2 (en)
TW (1) TWI458855B (en)
WO (1) WO2009034940A1 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101810258B1 (en) * 2010-03-01 2017-12-18 신닛테츠 수미킨 가가쿠 가부시키가이샤 Metal nanoparticle composite and process for production thereof
CN103052481B (en) * 2010-08-09 2015-06-17 新日铁住金化学株式会社 Process for producing metal nanoparticle composite
KR101333605B1 (en) 2012-04-16 2013-11-27 전자부품연구원 Manufacturing method of conductive film using reducing agent based main group element
JP6045527B2 (en) * 2014-03-28 2016-12-14 富士フイルム株式会社 LAMINATE AND ITS MANUFACTURING METHOD, AND REFLECTOR, MIRROR FILM, ANTIMICROBIAL COAT, CONDUCTIVE FILM, HEAT CONDUCTOR
WO2018212345A1 (en) * 2017-05-18 2018-11-22 学校法人芝浦工業大学 Method for producing conductor, method for producing wiring board, and composition for forming conductor
JP6580119B2 (en) * 2017-12-28 2019-09-25 石原ケミカル株式会社 Method for forming metal film on polyimide resin
US20230106977A1 (en) * 2020-03-26 2023-04-06 Sekisui Chemical Co., Ltd. Resin particles, electrically conductive particles, electrically conductive material, and connection structure

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09148712A (en) * 1995-11-21 1997-06-06 Tokai Rubber Ind Ltd Three-dimensional molded circuit body and manufacture thereof
JP3824342B2 (en) * 1996-03-13 2006-09-20 日本リーロナール株式会社 Manufacturing method of surface printed wiring board (SLC)
JP2002290014A (en) * 2001-03-26 2002-10-04 Toray Eng Co Ltd Method of forming metallic circuit pattern
JP2004152852A (en) * 2002-10-29 2004-05-27 Toray Eng Co Ltd Method of manufacturing circuit base for electronic part
JP4391836B2 (en) * 2004-01-19 2009-12-24 積水化学工業株式会社 Coated conductive particles, anisotropic conductive material, and conductive connection structure
JP2006237322A (en) * 2005-02-25 2006-09-07 Mitsubishi Paper Mills Ltd Method for manufacturing copper polyimide substrate
JP2007131875A (en) * 2005-11-08 2007-05-31 Fujifilm Corp Method for forming metallic film and metal pattern

Also Published As

Publication number Publication date
JPWO2009034940A1 (en) 2010-12-24
WO2009034940A1 (en) 2009-03-19
JP5101623B2 (en) 2012-12-19
TWI458855B (en) 2014-11-01

Similar Documents

Publication Publication Date Title
TW200920873A (en) Method of forming a conductor layer, method of manufacturing a circuit board, method of manufacturing conductive fine particles, and composition for forming a conductor layer
US6625032B1 (en) Aqueous dispersion forming conductive layer, conductive layer, electronic compent, circuit board and method for manufacturing the same, and multilayer wiring board and method for manufacturing the same
JP5971242B2 (en) Method for producing conductive coating film and conductive coating film
CN104812944B (en) Copper foil with carrier
WO2012157704A1 (en) Copper powder, copper paste, method for manufacturing conductive coating film, and conductive coating film
TWI490113B (en) Attached copper foil
JP6667119B1 (en) Laminated body for printed wiring board and printed wiring board using the same
KR20210023828A (en) Manufacturing method of printed wiring board
WO2020003878A1 (en) Method of manufacturing printed wiring board
JP2016058545A (en) Substrate for printed wiring board, printed wiring board and method of manufacturing printed wiring board
JPWO2014132961A1 (en) Method for producing conductive coating film and conductive coating film
TWI449482B (en) Manufacturing method for circuit wiring board
TWI386518B (en) Method of forming conductor layer and method of fabricating circuit board
JP5250923B2 (en) Ultrafine composite resin particles, composition for forming a dielectric, and electronic component
JP2008258293A (en) Forming method of patterned conductor layer, manufacturing method of circuit board and circuit board
JP2004335764A (en) Dielectric film and method for manufacturing the same
JP2011060654A (en) Manufacturing method for copper thin film, and copper thin film
JP6547748B2 (en) Method of manufacturing conductive coating and conductive coating
JP2019114680A (en) Base material for printed wiring board and printed wiring board
JP2010093114A (en) Method of manufacturing circuit wiring board
JP2001192570A (en) Aqueous dispersive liquid for forming conductive layer, conductive layer, electronic part, circuit board and its manufacturing method
TWI449481B (en) Manufacturing method for circuit wiring board
JP2008294059A (en) Forming method of conductor layer, and manufacturing method of circuit board
JP2010093115A (en) Method of manufacturing circuit wiring board
JP2019114679A (en) Base material for printed wiring board

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees