TW200919770A - Light-emitting diode - Google Patents

Light-emitting diode Download PDF

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Publication number
TW200919770A
TW200919770A TW96139190A TW96139190A TW200919770A TW 200919770 A TW200919770 A TW 200919770A TW 96139190 A TW96139190 A TW 96139190A TW 96139190 A TW96139190 A TW 96139190A TW 200919770 A TW200919770 A TW 200919770A
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TW
Taiwan
Prior art keywords
light
electrode
emitting diode
wafer
chip
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TW96139190A
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Chinese (zh)
Inventor
Yuan-Fa Chu
Wen-Jang Jiang
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Foxsemicon Integrated Tech Inc
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Priority to TW96139190A priority Critical patent/TW200919770A/en
Publication of TW200919770A publication Critical patent/TW200919770A/en

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Abstract

The present invention relates to a light-emitting diode. The light-emitting diode includes a substrate, a first electrical contact, a second electrical contact, at least a first LED chip, at least a second LED chip and an encapsulation. The first electrical contact has an opposite polarity relative to the second electrical contact. The first electrical contact and the second electrical contact both are installed on the substrate. A fluorescent material is partly doped in the encapsulation. The at least a first LED chip is each used to emit the light with a first wavelength, so as to excite the fluorescent material to generate a white light. The at least a second LED chip is each used to emit a light with second wavelength to adjust the color temperature of the white light. The second wavelength is in the range of 570 to 670 nanometers. The first electrical contact and the second electrical contact are used to supply an electrical energy to power the at least a first LED chip and the at least a second LED chip.

Description

200919770 九、發明說明: 【發明所屬之技術領域】 本發明涉及一種發光二極體。 '【先前技術】 現如今,發光二極體(Light Emitting Diode,LED)已經 被廣泛應用到很多領域,如何能得到性能更優越之發光二 極體已經變成人們研發之方向,一種新型發光二極體可參 見 Daniel A. Steigerwald 等人於文獻 IEEE Journal on Selected Topics in Quantum Electronics, Vol. 8,No.2, March/April 2002 中之 Illumination With Solid State Lighting Technology —文。因為發光二極體具有發光效率 高、演色性佳等特點,所以其開始被人們運用於路燈上以 利於日常生活所需。 然而,先前的發光二極體光源射出的白光之色溫值偏 高,其通常介於4500〜6500K,這樣會讓人們感覺寒冷且光 , 線刺眼、同時光源之演色性亦僅能達到80%,這樣之色溫 % 值及演色性還不能達到人們的要求。先前的發光二極體通 常係藉由於發光二極體晶粒中加入螢光物質以發出白光’, 而螢光物質之比例於發光二極體製造完成後即已固定,因 此不能於後續之使用過程中對發光二極體之色溫進行調 節,從而難以滿足人們的使用要求。 有鑑於此,提供一種色溫可調之發光二極體實為必要。 【發明内容】 以下將以實施例說明一種色溫可調之發光二極體。 200919770 一種發光二極體’其包括:—基座; 該第一電極極性相反之第_+ 電極及與 均安裝於該基座上,弟一電極與第二電極 一發光二極體晶片及至少— 至夕弟 奘髀,访私壯μ 士 乐一&光一極體晶片以及一封 r ’ϊ局部摻雜有螢光物質,該至少—第-晶 “出第一波長之光以激發該螢光物質產生白光,, 至少—第二晶片用於射出第 該 ,、田,兮哲_上ρ 收我 < 尤以调即該白光之色 /: μ弟—波長之範圍為570〜670奈米 土:極;晶片及至少-第二發光二極體晶片由㈣ ,、弟一電極向其提供電能。 ° 、相對於先前技術’該發光二極體可射出白光幻 =570〜67〇奈米的光,使該發光二極體藉由調節波^ ·,、570〜670奈米的光之亮度以實現調節該 ^ 從而適當之提高人們的舒適度。 巴皱, 【實施方式】 下面結合附圖對本發明作進—步之詳細說明。 請參見S1,本發明第一實施例提供之發光二極體1〇, 二包括:-個基座n’-個第—電極12,—個第二電極η, :個第-發光二極體晶片14,—個第二發光二極 及—個封裝體16。 該第一電極12與該第二電極13均安袈於該基座以 且極性相反。於本實施例中,該第—電極 二電極13為負極。 孩弟 該第一發光二極體晶片14與該第二發光二極體晶片 200919770 15串聯,該第—發光二極體晶片㈣該第二發光二 =5由該第—電極12與第二電極13向其提供電能。於: “列中π亥第一發光二極體晶片14設置於該第一電極12 上,且該第—發光二極體晶片14之第一極141與該第—带 極12打線連接,該第一發光二極體晶片14 : 第:波長之激發光;該第二發光二極體晶片15設;= 極13上’該第二發光二極體晶片15之第一極151與 忒弟一發光二極體晶片14之與其第一極141極性相反之第 一極142打線連接,該第二發光二極體晶片^之第二極说 =與㈣二電極13電性連接,該第二發光二極體晶片Μ 、于出弟—波長之光,該第二波長之範圍為"Ο〜6%奈 私該第一發光二極體晶片Μ所用材質為㈣族化合 ’例如.氮化銘鎵銦(A1InGaN)等,該第二發光二極體晶 15所用材質為㈣族化合物,例如1化 (AlInGaP)。 y里解的疋’該發光二極體1〇所包括之第一發光二極 1 14及第—發光二極體晶>;15之數量不限於一個, 其亦可為複數個。 之笛」封衣收16包括用於密封該第一發光二極體晶片14 —部分161 ’及用於密封該第二發光二極體晶片15與 部* 161週邊之第二部*162,該第—部分i6i内摻 數菸兮先物質,該第—發光二極體晶片14發出之激發光可 激發該登光物質產生白光並出射至該封裝體16之外部。該 200919770 螢光物質可為紀紹石權石(yag)螢光粉,齡石瘤石(TAG) 螢光粉,树鹽螢光粉,或氮化物螢光粉等。 ,θ I第電極12與第二電極13連接至-驅動控制單 (曰圖未示)時,該第-發光二極體晶片U與第二發光二極 體晶片15串接於一 ^ ^ ^ rr>, 1 、电虱迴路中,該驅動控制單元可控制流 =弟-發光二極體晶片14與第二發光二極體晶片以之 迅^以调即該弟—發光二極體晶片14與第二發光二極體晶 、吾所發出光之党度’該第一發光二極體晶片Μ所發出 2發光可激發該螢光物質產生白光,該第二波長之光直 :射至該封裝體16之外部。在此,該驅動控制單元可藉 由控制流過上述電氣迴路之電流來調節 二從而可對該發光二極體所發出之白光之色溫^ 其盘本發明第二實施例提供之發光二極體2〇, 二、二f施例提供之發光二極體10基本相同,不同 該發光二極體20還包括—個二極體晶片27,該 :極體曰曰片27與該第一發光二極體晶# Μ 當該第一電極12為正極而該第二桎外 極體晶片27之負極271與該第一電極^負極時’該二 極體晶片27之正極272與該第_ :生連接,該二 極體晶…有效之防止反:二 二極體晶片U。於此,當該第一電= 接至—驅動控制單元(圖未示)時,該第一極13連 14與第二發光二極體晶片15並聯於一電:、極體晶片 ^ 電軋迴路中,該驅動 200919770 控制單元可藉由控制流過上述電氣迴路之電流來調節該第 二波長之光之亮度,從而可對該發光二極體10所發出之白 光之色溫進行調節。 請參見圖3,本發明第三實施例提供之發光二極體30, 其包括:一個基座11,一個第一電極.12,一個包括第一分 部131及第二分部132之第二電極13,一個第一發光二極 體晶片14,一個第二發光二極體晶片15,及一個封裝體16。 該第一電極12,第二電極13之第一分部131及第二分 部132均設置於該基座11上,於本實施例中,該第一電極 12為負極,該第二電極13為正極。 該第一發光二極體晶片14由該第一電極12與第二電 極13之第一分部131向其提供電能。於本實施例中,該第 一發光二極體晶片14設置於該第一電極12上,且該第一 發光二極體晶片14之第一極141與該第一電極12打線連 接,該第一發光二極體晶片14之與其第一極141極性相反 之第二極142與該第二電極13之第一分部131打線連接, 該第一發光二極體晶片14用於發出激發光。 該第二發光二極體晶片15由該第一電極12及該第二 電極13之第二分部132向其提供電能。於本實施例中,該 第二發光二極體晶片15設置於該第一電極12上且與該第 一發光二極體晶片14相鄰,該第二發光二極體晶片15之 第一極151與該第二電極13之第二分部132打線連接,該 第二發光二極體晶片15之與其第一極151極性相反之第二 極152直接與該第一電極12電性連接。 π 200919770 '該第一發光二極體晶片14發出之激發光可激發該封裝 體16之第一部分161内摻雜之螢光物質產生白光並出射至 .該封裝體16之外部。在此,該第二發光二極體晶片15由 該:凌體16之第二部分162來覆蓋,所以該第二發光二極 體as片15射出的第—波長之光可直接經該第二部分脱出 射至该封裝體16之外部。 當該第-電極12與第二電極13之第—分部131連接 至第一」驅動控制單元(圖未示),該第一電極Η與第二電 :13之第-分部132連接至-第二驅動控制單元(圖未示) ㈣第-發光二極體晶片14處於由該第一驅動控制單元 :控制之第—電氣迴路中,該第二發光二極體晶片15處於 該第二驅動控制單元來控制之第二電氣迴路中,該 控制早兀與第二驅動控制單元可分別控制流過該第— 發光二極體晶片14盘第-私氺 ^ ”弟一發先—極體晶片15之電流以分 二It 一發光二極體晶片14與第二發光二極體晶片 只出光之冗度,该第一發光二極體晶片14所發出之 發光可激發該螢光物質產生白光’該第二發光二極體晶片 5所發出之第二波長之光直接出射至該封裝冑μ之外 广於此’第二驅動控制單元可藉由控制流過 =路,電流來調節該第二波長之光之亮度,從而= Λ先一極體10所發出之白光之色溫進行調節。 綜上所述,本發明確已符合發明專利之要# ^出專利申請。惟,以上所述者僅為本發明之較佳^ 式’自不心此限制本案之申料㈣圍。舉凡孰: 12 200919770 技#之人士援依本發明之精神所作 應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 之#效修飾或 變化,皆 θ1係本發明第一實施例發光二極體之截面示意圖。 圖2係本發明第二實施例發光二極體之截面示意圖。 圖3係本發明第三實施例發光二極體之截面示意圖。 【主要元件符號說明】 發光二極體 基座 弟一電極 第二電極 10 , 20 , 30 11 12 13 第一發光二極體晶片 第二發光二極體晶片 封裝體 14 15 16 二極體晶片 第一分部 第二分部 苐一極 第二極 第一部分 第二部分 負極 正極 27 131 132 141 , 151 142 , 152 161 162 271 272 13200919770 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a light-emitting diode. '[Prior Art] Nowadays, Light Emitting Diode (LED) has been widely used in many fields. How to get better performance LEDs has become the direction of people's research and development, a new type of LED See, for example, Daniel A. Steigerwald et al., IEEE Journal on Selected Topics in Quantum Electronics, Vol. 8, No. 2, March/April 2002. Because the light-emitting diode has the characteristics of high luminous efficiency and good color rendering, it has begun to be used on street lamps to meet the needs of daily life. However, the color temperature of the white light emitted by the previous light-emitting diode light source is relatively high, which is usually between 4500 and 6500K, which makes people feel cold and light, the line is glaring, and the color rendering of the light source can only reach 80%. Such color temperature values and color renderings are not enough to meet people's requirements. The former light-emitting diodes usually emit white light by adding a fluorescent substance to the light-emitting diode crystal grains, and the proportion of the fluorescent material is fixed after the light-emitting diode is manufactured, so it cannot be used in subsequent use. In the process, the color temperature of the light-emitting diode is adjusted, so that it is difficult to meet the requirements of people's use. In view of this, it is necessary to provide a light-emitting diode with adjustable color temperature. SUMMARY OF THE INVENTION Hereinafter, a light-emitting diode with adjustable color temperature will be described by way of examples. 200919770 A light-emitting diode comprising: a pedestal; a first _+ electrode of opposite polarity of the first electrode and a light-emitting diode chip mounted on the pedestal, a second electrode and a second electrode — 至 奘髀 奘髀 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The fluorescent material produces white light, at least—the second wafer is used to shoot the first, the field, the 兮哲_上ρ收我< especially the tone of the white light /: μ brother - the wavelength range is 570~670 The nanometer soil: the pole; the wafer and the at least-second light-emitting diode chip are supplied with electric energy by the (four), the second electrode. °, compared with the prior art, the light-emitting diode can emit white light magic=570~67〇 The light of the nanometer enables the light-emitting diode to adjust the brightness by adjusting the brightness of the light of 570 to 670 nm to appropriately improve people's comfort. Bar wrinkles, [Embodiment] The present invention will be described in detail with reference to the accompanying drawings. Please refer to S1, the present invention. An embodiment provides a light-emitting diode 1〇, two comprising: a pedestal n'-first electrode 12, a second electrode η, a first-light-emitting diode wafer 14, a second The first electrode 12 and the second electrode 13 are mounted on the pedestal and have opposite polarities. In this embodiment, the first electrode and the second electrode 13 are negative electrodes. The first light-emitting diode chip 14 is connected in series with the second light-emitting diode wafer 200919770 15 , and the second light-emitting diode chip (4) is printed by the first electrode 12 and the second electrode 13 The electric current is supplied to the first electrode 12, and the first electrode 141 of the first light emitting diode chip 14 and the first band electrode are disposed on the first electrode 12. 12-wire connection, the first LED chip 14: the first wavelength of excitation light; the second LED chip 15; = the pole 13 on the first pole of the second LED chip 15 151 is connected to the first pole 142 of the light-emitting diode chip 14 opposite to the first pole 141 of the light-emitting diode chip 14 , and the second light-emitting diode wafer is ^ The second pole is said to be electrically connected to the (four) two-electrode chip, the second light-emitting diode chip Μ, the younger-wavelength light, the range of the second wavelength is "Ο~6%Nai private first The material used for the light-emitting diode wafer is a (four) group compound, for example, a gallium indium (A1InGaN) or the like, and the second light-emitting diode crystal 15 is made of a compound of a (4) group, for example, AlInGaP. The number of the first light-emitting diodes 14 and the first light-emitting diodes 15 included in the light-emitting diode 1 is not limited to one, and may be plural. The flute closure 16 includes a portion 161 ′ for sealing the first LED wafer 14 and a second portion 162 for sealing the periphery of the second LED wafer 15 and the portion 161. The first portion i6i is doped with a plurality of soot materials, and the excitation light emitted from the first light-emitting diode chip 14 can excite the light-emitting material to generate white light and exit to the outside of the package body 16. The 200919770 fluorescent substance can be yag fluorite powder, age stone stone (TAG) fluorescing powder, tree salt fluorescing powder, or nitride fluoro powder. When the θ I electrode 12 and the second electrode 13 are connected to a driving control unit (not shown), the first LED chip U and the second LED chip 15 are connected in series to each other. Rr>, 1 , in the electric circuit, the driving control unit can control the flow-dielectric-light-emitting diode chip 14 and the second light-emitting diode wafer to be tuned to the light-emitting diode wafer 14 And the second light-emitting diode crystal, the party of the emitted light, the second light-emitting diode chip emits two light rays to excite the fluorescent material to generate white light, and the second wavelength of light is straight to: The outside of the package body 16. Here, the driving control unit can adjust the color of the white light emitted by the light emitting diode by controlling the current flowing through the electrical circuit, and the light emitting diode provided by the second embodiment of the present invention. The LEDs 10 provided by the second and second embodiments are substantially the same, and the LEDs 20 further include a diode wafer 27, the polar body 27 and the first light emitting diode When the first electrode 12 is a positive electrode and the negative electrode 271 of the second outer electrode wafer 27 and the first electrode are negative, the positive electrode 272 of the diode wafer 27 is the same as the first The connection, the diode crystal... effectively prevents the reverse: the diode chip U. In this case, when the first electrical connection is connected to the driving control unit (not shown), the first pole 13 is connected to the second LED chip 15 in parallel with a second electrode; In the loop, the drive 200919770 control unit can adjust the brightness of the second wavelength of light by controlling the current flowing through the electrical circuit to adjust the color temperature of the white light emitted by the LED 10. Referring to FIG. 3, a light-emitting diode 30 according to a third embodiment of the present invention includes: a pedestal 11, a first electrode 12.12, and a second portion 131 and a second portion 132. The electrode 13, a first LED chip 14, a second LED chip 15, and a package body 16. The first electrode 12 and the first portion 131 and the second portion 132 of the second electrode 13 are disposed on the pedestal 11. In the embodiment, the first electrode 12 is a negative electrode, and the second electrode 13 is Is the positive electrode. The first LED chip 14 is supplied with electrical energy from the first electrode 131 of the first electrode 12 and the second electrode 13. In the embodiment, the first LED chip 14 is disposed on the first electrode 12, and the first electrode 141 of the first LED chip 14 is connected to the first electrode 12, and the A second electrode 142 of a light-emitting diode wafer 14 having a polarity opposite to that of the first electrode 141 is connected to the first portion 131 of the second electrode 13, and the first LED chip 14 is used to emit excitation light. The second LED chip 15 is supplied with electric energy from the first electrode 12 and the second portion 132 of the second electrode 13. In this embodiment, the second LED chip 15 is disposed on the first electrode 12 adjacent to the first LED chip 14 and the first pole of the second LED chip 15 151 is connected to the second portion 132 of the second electrode 13 , and the second electrode 152 of the second LED chip 15 opposite to the first electrode 151 is directly electrically connected to the first electrode 12 . π 200919770 'The excitation light emitted by the first LED chip 14 excites the phosphor material doped in the first portion 161 of the package 16 to generate white light and exit to the outside of the package 16. Here, the second LED chip 15 is covered by the second portion 162 of the body 16, so that the first wavelength light emitted by the second LED asp 15 can pass directly through the second Part of the extraction is directed to the outside of the package body 16. When the first electrode 12 and the first electrode 131 of the second electrode 13 are connected to the first "drive control unit (not shown), the first electrode Η and the first electrode 132 of the second electrode 13 are connected to a second driving control unit (not shown). (4) The first light emitting diode chip 14 is in a first electric circuit controlled by the first driving control unit, and the second light emitting diode chip 15 is in the second Driving the control unit to control the second electrical circuit, the control early and the second driving control unit respectively control the flow of the first-light-emitting diode chip 14 The current of the wafer 15 is divided into two light-emitting diodes 14 and the second light-emitting diode wafer, and the light emitted by the first light-emitting diode wafer 14 can excite the fluorescent material to generate white light. The light of the second wavelength emitted by the second LED chip 5 is directly emitted outside the package 'μ. The second driving control unit can adjust the current by controlling the flow of the current. The brightness of the two-wavelength light, thus = the color of the white light emitted by the first polar body 10 In view of the above, the present invention has indeed met the patent application of the invention patent. However, the above description is only the preferred method of the present invention, which is not intended to limit the application of the case (4) 。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。。 2 is a schematic cross-sectional view of a light-emitting diode according to a second embodiment of the present invention. FIG. 3 is a schematic cross-sectional view of a light-emitting diode according to a third embodiment of the present invention. Body pedestal-electrode second electrode 10, 20, 30 11 12 13 first light-emitting diode chip second light-emitting diode chip package 14 15 16 diode chip first branch second branch Polar second pole first portion second partial negative cathode 27 131 132 141 , 151 142 , 152 161 162 271 272 13

Claims (1)

200919770 十、申請專利範圍: 1.-種發光二極體,其包括:一基座;一第一電極及與該第 .-電極極性相反之第二電極,該第—電極與第二電極均安 裝於該基座上,其改進在於:該發光二極體還包括至少一 第-發光二極體晶片及至少一第二發光二極體晶片以及一 封装體,該封裝體内局部摻雜有螢光物質,該至少一第一 晶片用於射出第-波長之光以激發該螢光物質產生白光, 該至少一第二晶片用於射出第二波長之光以調節該白光之 色溫,該第二波長之範圍為57〇〜67〇奈米,該至少一第一 :务光:極體晶片及至少一第二發光二極體晶片由該第一電 極與第二電極向其提供電能。 申請專利範圍第i項所述之發光二極體,其中,該至少 第-發光二極體晶片與該至少一第二發光二極體晶片串 請專利範圍第1項所述之發光二極體,其中,該發光 :_還包括一個二極體晶片,該二極體晶片與該至二 备光一極體晶片反向並聯。 中請專利範圍第1項所述之發光二極體,其中,該至少 :::發光二極體晶片與該至少-第二發光二極體:曰:片設 與^弟-電極上且相鄰設置,該第二電極包括第一分部 鱼μ刀邛,5亥至少-第-發光二極體晶片經由該第一分 ::::電極向其提供電能,該至少-第二發光二極體晶 該第二分部與該第一電極向其提供電能。 5’如申請專利範圍第1項所述之發光二極體,其中,該至少 14 200919770 奸第纟光—極體晶片所用材質為氮化紹鎵銦,該至少一 弟二發光二極體晶片所用材質為魏紹鎵麵。 1如中請專利範圍第!項所述之發光二極體,其中,該封裝 ,八G括用於密封該至少一第一發光二極體晶片之第一部 二’及用於密封該至少一第二發光二極體晶片與該第一部 趟邊之第二部分,該第/部分内摻雜有該螢光物質。 .如申請專利範圍第1項所述之發光二極體,其中,該螢光 物質為釔鋁石榴石螢光粉,铽鋁石榴石螢光粉,矽酸鹽螢 光粉或氮化物螢光粉。 15200919770 X. Patent application scope: 1. A light-emitting diode comprising: a susceptor; a first electrode and a second electrode having a polarity opposite to the first electrode, the first electrode and the second electrode The illuminating diode further includes at least one illuminating diode chip and at least one second illuminating diode chip and a package body partially doped in the package body a fluorescent substance, the at least one first wafer is for emitting light of a first wavelength to excite the fluorescent substance to generate white light, and the at least one second wafer is for emitting light of a second wavelength to adjust a color temperature of the white light, the first The two wavelengths range from 57 〇 to 67 〇 nanometers, and the at least one first: the light-emitting body wafer and the at least one second light-emitting diode wafer are supplied with electric energy from the first electrode and the second electrode. The light-emitting diode of claim 1, wherein the at least first-light-emitting diode wafer and the at least one second light-emitting diode wafer are in a light-emitting diode according to claim 1 The illuminating: _ further includes a diode chip, and the diode chip is connected in anti-parallel with the two to one photo-powder wafer. The illuminating diode of claim 1, wherein the at least:: illuminating diode chip and the at least second illuminating diode: 曰: chip set and ^ electrode-electrode Adjacently disposed, the second electrode includes a first partial fish, and the at least one-light-emitting diode chip supplies electrical energy thereto via the first minute:::: electrode, the at least-second light The second portion of the polar body and the first electrode provide electrical energy thereto. 5' The light-emitting diode according to claim 1, wherein the material of the at least 14 200919770 is a gallium nitride, the at least one light-emitting diode chip. The material used is Wei Shao gallium surface. 1 Please ask for the scope of patents! The illuminating diode of the present invention, wherein the package includes a first portion ii for sealing the at least one first illuminating diode chip and sealing the at least one second illuminating diode chip The second portion of the first portion is doped with the phosphor. The light-emitting diode according to claim 1, wherein the fluorescent material is yttrium aluminum garnet phosphor powder, yttrium aluminum garnet phosphor powder, phthalate phosphor powder or nitride phosphor powder. 15
TW96139190A 2007-10-19 2007-10-19 Light-emitting diode TW200919770A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012075781A1 (en) * 2010-12-10 2012-06-14 方方 Light source system capable of adjusting color temperature
US11767470B2 (en) 2019-02-26 2023-09-26 Turun Yliopisto Lighting device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012075781A1 (en) * 2010-12-10 2012-06-14 方方 Light source system capable of adjusting color temperature
CN102563379A (en) * 2010-12-10 2012-07-11 九江正展光电有限公司 Luminous source system capable of adjusting color temperature
US11767470B2 (en) 2019-02-26 2023-09-26 Turun Yliopisto Lighting device

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