TW200918684A - Methods and apparatus for reducing the consumption of reagents in electronic device manufacturing processes - Google Patents

Methods and apparatus for reducing the consumption of reagents in electronic device manufacturing processes Download PDF

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Publication number
TW200918684A
TW200918684A TW97122439A TW97122439A TW200918684A TW 200918684 A TW200918684 A TW 200918684A TW 97122439 A TW97122439 A TW 97122439A TW 97122439 A TW97122439 A TW 97122439A TW 200918684 A TW200918684 A TW 200918684A
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TW
Taiwan
Prior art keywords
substrate coating
reagent
coating chamber
substrate
chamber
Prior art date
Application number
TW97122439A
Other languages
Chinese (zh)
Inventor
Daniel O Clark
Robert Z Bachrach
Mehran Moalem
Jay J Jung
Original Assignee
Applied Materials Inc
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200918684A publication Critical patent/TW200918684A/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45593Recirculation of reactive gases

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)

Abstract

A substrate coating system is provided which includes a substrate coating chamber; a gas box connected to the coating chamber and adapted to provide reagent gases to the coating chamber; and a reagent reclaim system connected to the substrate coating chamber and the gas box, wherein the reagent reclaim system includes a wet scrubber connected to the coating chamber; a polisher connected to the wet scrubber; and a dryer connected to the polisher and the gas box.

Description

200918684 九、發明說明: 【相關申請案】 於2008年2月9號申請標題為「減少電子裝置製程中 之試劑消耗的方法與設備」之共有的美國專利申請案 61/0521 64號(代理人案號1 3543); 於2006年11月30號申請標題為「稀釋氣體的回收利 用」之共同受讓的美國專利申請案11/565400號(代理人案 號 11402); 於2008年3月24號申請標題為「使用低純度矽烷來 沉積不定形矽與微晶矽的方法」之共同受讓的美國專利申 請案6 1 /03 9 1 0 1號(代理人案號1 3226/L);以及 於2 0 0 8年2月5號申請標題為「減量系統」之共同受 讓的美國專利申請案 61/026432 號(代理人案號 1 3 20 8/L2),並且於本文中弓|用上述專利申請案之全文以供 參考。 【發明所屬之技術領域】 本發明大體上有關於電子裝置製造技術,特別是有關 於基板塗覆製程中所使用之試劑氣體的回收與再利用。 【先前技術】 某些電子裝置製造製程可能使用大量的昂貴試劑,並 且其中一些試劑若釋放至大氣中可能造成傷害與危險。目 前已使用可將該些試劑或其副產物轉換成傷害性及/或危 5 200918684 險性較低之化合物的減量系統來減少這些試劑及其副產 物。減少這些試劑及其副產物是爲了解決這些試劑及其副 產物具有傷害性及或危險性的問題。然而,減.量可能無法 解決需要購買大量昂貴試劑以及有未被耗用的試劑通過製 程腔室而最終浪費掉的問題。 因此期望能夠發展出可減少昂貴試劑之消耗量的方法 與設備。200918684 IX. Inventor's Note: [Related Applications] US Patent Application No. 61/0521 64 (Procedure), filed on February 9, 2008, entitled "Methods and Equipment for Reducing Reagent Consumption in Electronic Device Manufacturing Processes" U.S. Patent Application Serial No. 11/565400 (Attorney Docket No. 11402) entitled "Recycling of Diluted Gases", November 30, 2006; U.S. Patent Application Serial No. 6 1 /03 9 1 0 1 (Attorney Docket No. 1 3226/L), entitled "Method of Deposition of Undefined Deuterium and Microcrystalline Bismuth Using Low Purity Decanane"; And U.S. Patent Application Serial No. 61/026,432 (Attorney Docket No. 1 3 20 8/L2), entitled "Decrementing System", filed on February 5, 2008, and hereby The entire disclosure of the above-identified patent application is hereby incorporated by reference. TECHNICAL FIELD OF THE INVENTION The present invention relates generally to electronic device fabrication techniques, and more particularly to the recovery and reuse of reagent gases used in substrate coating processes. [Prior Art] Some electronic device manufacturing processes may use a large amount of expensive reagents, and some of them may cause harm and danger if released into the atmosphere. These reagents and their by-products have been reduced using a reducing system that converts these reagents or their by-products into nociceptive and/or hazardous compounds. These agents and their by-products are reduced in order to address the nuisance and/or danger of these agents and their by-products. However, the amount of reduction may not solve the problem of requiring a large amount of expensive reagents to be purchased and the unconsumed reagents to be eventually wasted through the process chamber. It is therefore desirable to develop methods and apparatus that reduce the consumption of expensive reagents.

【發明内容】 在本發明的一態樣中提供一種基板塗覆系統,其包括 1 ) 一基板塗覆腔室;2 ) —氣箱,其連接至該塗覆腔室以提 供試劑氣體至該塗覆腔室;以及 3)—連接至該基板塗覆 腔室與該氣箱的試劑回收系統,其中該試劑回收系統包含 a) —連接至該塗覆腔室的洗滌器、一連接至該洗滌器的精 洗器(polisher),以及一連接至該精洗器與該氣箱的乾燥 器。 在本發明的另一態樣中提供一種基板塗覆系統,其包 括1) 一基板塗覆腔室;2)—氣箱,其連接至該塗覆腔室以 提供試劑氣體至該塗覆腔室;以及 3)—連接至該基板塗 覆腔室與該氣箱的試劑回收系統,其中該試劑回收系統包 含a) —連接至該塗覆腔室的試劑過濾器;以及b) —連接至 該試劑過濾器的摻雜劑過濾器。 在本發明又一態樣中提供一種操作基板塗覆系統的方 法,該方法包括 a)供應超過一種的試劑至該基板塗覆腔SUMMARY OF THE INVENTION In one aspect of the invention, a substrate coating system is provided that includes: 1) a substrate coating chamber; 2) a gas box coupled to the coating chamber to provide reagent gas to the a coating chamber; and 3) a reagent recovery system coupled to the substrate coating chamber and the gas tank, wherein the reagent recovery system comprises a) a scrubber coupled to the coating chamber, a connection to the A polisher of the scrubber, and a dryer connected to the scrubber and the gas box. In another aspect of the invention, there is provided a substrate coating system comprising: 1) a substrate coating chamber; 2) a gas box coupled to the coating chamber to provide reagent gas to the coating chamber And a reagent recovery system coupled to the substrate coating chamber and the gas tank, wherein the reagent recovery system comprises a) a reagent filter coupled to the coating chamber; and b) - connected to A dopant filter for the reagent filter. In another aspect of the invention, a method of operating a substrate coating system is provided, the method comprising: a) supplying more than one reagent to the substrate coating chamber

200918684 室;b)在該基板塗覆腔室中塗覆一基板;c)從該基板 腔室中排放出未使用的試劑;以及 d)回收試劑以再 為用於基板塗覆腔室中的試劑。 根據本發明的這些與其他態樣可提供多種其他態 參閲以下詳細說明、後附申請專利範圍與附圖可更清 解本發明的其他特徵與他種態樣。 【實施方式】 電子裝置製造製程可能使用大量的試劑,例如矽 氫氣。這些試劑中有一大部分可能是昂貴及/或珍貴 劑,並且可能沒有使用就通過製程腔室而成為廢料。 在早於本發明的典型基板塗覆製程中,可能將矽 氫氣導入處於基板塗覆製程條件下的基板塗覆腔室中 當量的氫氣與矽烷可能在未使用的情況下通過基板塗 室。這些未使用的氫氣和矽烷被當作有害及/且危險性 放物進行處理,並且將此排放物排放到適合的減量 中。此種減量裝置可能是一種熱減量裝置,在該減量 中加熱排放物並且混入一氧化劑來氧化該排放物。 矽烷可能價格不斐且未來可能不易取得。此外, 電子裝置製造設備可能位在相對較遠的位置而難以載 以管锋輸送試劑,或是輸送費用昂貴。因此期望能夠 用這些試劑,如此便只需向供應商購買較少量的試劑 被當成廢料來處理的試劑也較少。 在一態樣中,本發明提供一種回收氫氣以再次作 於基板塗覆製程中之試劑的方法與設備。其可藉著從 塗覆 次作 樣。 楚了 烷與 的試 烷與 。相 覆腔 的排 裝置 裝置 某些 送或 再利 ,且 為用 該基 7 200918684 板塗覆腔室中排出未使用的試劑流且洗蘇該試劑流以去 雜質來達成之。隨後可使已洗滌後的未使用試劑流通過 冷凝阱(cold trap)或一冷卻機(refrigerated chiller)’ 以 一步純化該未使用的試劑流。接著,可令該未使用的試 流通過一乾燥器’以去除存在該未使用試劑流中的水。 後將該未使用的試劑流送回一氣箱’而從該氣箱供應該 使用的試劑至基板塗覆腔室中以作為一反應試劑。 在另一態樣中,本發明提供用來回收氫氣以再次作 用於基板塗覆製程中之試劑的方法與設備’以及提供用 回收矽以製造矽烷然後用於基板塗覆製程中作為試劑的 法與設備。其可藉著從該基板塗覆腔室中排出未使用的 劑流,並且使之流經一矽過濾器而從該未使用的試劑流 移除梦、石夕烧、二梦烧、三石夕炫和聚梦炫該試劑流以去 雜質來達成該方法與設備。此外,可使該未使用的試劑 通過一摻雜劑過濾器或一吸附或吸收分離基 (adsorption/absorption separation matrix)’ 以去除存在 未使用之試劑流中的摻雜劑。該已通過該些過/慮器的未 用試劑流主要成份是氫氣’並且將其輸送至氣箱中以供 至基板塗覆腔室中而再次利用° 第1圖是本發明之基板塗覆系統100的示意圖,其 用來回收且再利用氫氣以作為基板塗覆製程中的試劑。 統100可包含一可用來塗覆基板的基板塗覆腔室102。 如,在太陽能面板的製程中,通常會在如玻璃等基板上 覆矽,而在玻璃上形成多晶矽塗層。除了玻璃以外’也 除 近 劑 然 未 為 來 方 試 中 除 流 質 該 使 應 可 系 例 塗 可 8 200918684 使用其他基板,例如金屬膜、聚合物基板等等。除了用來 製造太陽能面板之外’系統100可用於其他塗覆製程。 基板塗覆腔室102透過導管104與節流閥(throttle valve)106 連接至,風箱組(bl〇wer package)108。風箱組 I 0 8可含有多個低壓水冷式風箱’但也可使用非水冷式的 風箱。該些風箱是低公差風箱(l〇wer tolerance blower)並 且具有只需要較少能量便可運轉風箱以及在風箱運送氣體 時較少熱量傳遞給氣體的優點。在風箱組108中具有超過 一個風箱(可選用水冷式)的實施例中,該些風箱分批啟動 以提高回收氣流的壓力’同時可傳遞較少的熱量給回收氣 流。任何能提高回收氣流壓力至例如介於約1 〇至40psi之 間、約2 0至3 0 p s i之間或約1 〇至2 0 p s i之間的風箱或幫 浦都可使用。也圩使用更高或更低的其他壓力。該些風箱 可降低或消除從風箱組1 0 8之下游至上游任何的背壓波傳 遞作用。 風箱組108叮透過導管u〇連接至濕式洗滌器112。 洗滌器112可例如是泡罩塔、鞍形洗滌塔(burr saddle)、 填充床塔或洗滌塔。任何適當的濕式洗滌器皆可使用。 洗滌器112透過導管114連接至冷凝阱116。冷凝阱 II 6可包含一或多個冷卻板或其他表面’以使欲從氣體流 中去除的氣體凝結於其上。可使冷凝阱丨16隔離且設置繞 路以方便維修。 洗滌器112與冷凝阱H6可經由導管118連接至一水 處理單元(未示出)。冷凝阱116可透過導管120連接至乾 200918684 燥器122。乾燥器122可以是分子篩乾燥器或其他任何適 用的乾燥器。乾燥器112可為單床式或多床式乾燥器。 乾燥器122可經由導管124連接至風箱126。風箱ι26 類似於風箱組108中所使用的風箱。風箱126可藉由導管 1 2 8連接至一濾油器1 3 〇。濾油器1 3 〇可用來抓住來自風箱 群1 2 6之s式劑流中可能存在的任何油類、污染物、潤滑性 反應產物及/或其他高蒸氣壓材料。 濾油器130可透過導管132連接至氣箱134。氣箱134 可用來混合试劑與其他氣體,以透過導管136將之導入基 板塗覆腔室1 02中。氣箱丨34可建構成使其連接至多個試 劑源'(未 '示出)_與其.他氣:體源(未..示.出)。試劑與其他氣體_可 透過質量流量控制器(未顯示)來導入氣箱中,以便輸送精 確的試劑與其他氣體之質量流率。 基板塗覆腔室102亦可經由導管14〇及/或隔離閥142 連接至幫浦群(pump stack)l 38。幫浦群138可經由導管144 連接至減量器146。 減量器_146可此是燃燒式/濕式減量器(burn wet abatement tool)或電熱式減量器等等。任何能有效減少腔 室清洗物的減量器均可使用。減量器146藉由導管148可 連接至廠房排放系統(house exhaust system,未顯示)做進 一步減量處理或是排放至大氣中。 腔室壓力計150可連接至基板塗覆腔室1〇2且亦可經 由通訊線路152連接至節流閥1〇6。 操作時’可以兩種模式來操作基板塗覆腔室1〇2。在 10 200918684 第一種模式中’基板塗覆腔室102可例如執行 以在基板上塗覆矽。在第二種模式中,可使用 電漿)來清洗基板塗覆腔室102。 以下以在基板上塗覆矽為範例來說明系 作。然而需了解到,本發明不只限制在基板上 可用於有試劑在未使用的情況下通過製程腔室 裝置製程中,例如包括用於太陽能面板、液晶 機發光二極體、薄膜以及奈米製程等等的沉積 外,本發明可應用在用來蚀刻圖案以移除不想 或用來清潔表面的製程腔室。 在第一模式中’即沉積模·_式_,氣箱1 34供 烷氣體至基板塗覆腔室102。在塗覆製程中, 計150結合使用節流閥106、幫浦群138以及 供應至製程腔室102之添加氣體來控制基板塗 中的壓力。風箱組108可透過導管1〇4來提供 因此’在塗覆製程中,可利用風箱組1 〇 8經由 節流閥106與導管110從基板塗覆腔室102抽 氣與矽烷氣體流,並且使其進入洗滌氣1丨2中 氫氣和矽烷試劑可與洗滌器112中的水接觸, 中移除曱矽烷、二矽烷、三矽烷與聚矽烷。此 11 2可去除氣體流中的摻雜劑》甲矽烷、二石夕# 聚矽烷和摻雜劑可經由導管 Π 8隨著洗蘇 medium)排出洗滌器。隨後,餘留的氣體流通 流入冷凝胖116。冷凝拼116可去除殘留在氣 一塗覆製程 電漿(例如氟 先10 0的操 塗覆矽,還 的任何電子 顯示器、有 應用中。此 要的材料及/ 應氫·.氣與發. 可利用壓力 •從氣箱1 34 :覆腔室1 0 2 真空來源。 導管104 、 出過量的氫 "未使用的 而從氣體流 外,.洗..蘇器 匕、三矽烷、 液(scrubber 過導管 1 14 體流中的任 200918684 何殘餘顆粒、水份、甲石夕烧、二石夕院、三;^烧、 摻雜劑。氣體流通過冷凝阱116而經由導管12〇 器122,在乾燥器112中將氣體流乾燥至含水量 • Ppm。隨後啟動風箱126以從乾燥器輸送該氣體 管124、導管128與濾油器130,濾油器13〇可 風|目1 2 6及/或風相1 2 8之氣體流中的任何油類或 子量及/或高蒸氣壓的物種。在此階段。氣體流可 (、 度的氫氣氣流’且隨後可將其送入氣箱丨34,而 用於基板塗覆腔室102中之基板塗覆製程中的試丨 在第·一模式中,即清洗模式,可使用來自遠 (未顯示)的電漿來清洗基板塗覆.腔室。可利用幫 來輸送此電漿清洗物’使其通過導管14〇、隔離 導管144而進入減量器146,並且在減量器中減 洗物。經過減量後的電衆清洗物從減量器1 4 6經由 而進入一廠房洗滌器(未顯示)進行進一步減量, 至大氣中。 G 第1 A圖是第1圖基板塗覆系統1 0 0之另一 置方式100A的示意圖。系統i〇〇a類似第!圖的; 只除了在風箱組108與基板塗覆腔室1〇2之間的 以-及包含了一控制系統。取代如第1圖中將風箱 接連接到基板塗覆腔室1〇2,而改經由導管154 156將風箱組108連接至導管丨40。導管140可以 群138連接至基板塗覆腔室1〇2的真空管線。控 透過訊號線160連接至氣箱134、基板塗覆腔室 聚石夕燒與 進入乾燥 低於約2 流通過導 移除來自 其他高分 能是高純 再次作為 削。 端電漿源 浦群1 3 8 閥142與 少電漿清 導管148 或是排放 種系統配 秦統1 0 0, 連接方式 組1Q8直 與三向閥 是將幫浦 制器158 102與三 12 200918684 向閥1 5 6。 操作時,系統100A的操作類似第1圖之系統丨〇〇,除 了在塗覆或沉積模式中,未使用的試劑氣體不會如第i圖 之系統100中的試劑氣體般進入導管i 〇4,而是進入導.管 140中且隨後經由閥156將其轉向而經由導管154進入風 箱組1 0 8中。在腔室清洗模式中,閥} $ 6設計成可使腔室 清洗物流經導管1 40而進入幫浦群丨3 8。 p 控制器1 5 8可決定基板塗覆腔室1 02是處於清洗模式 還疋沉積模式’並且可適當地控制三向閥156。 第2圖繪示本發明另一實施例之基板塗覆系統200的 示意圖。系統200可包含一基板塗覆腔室202,該腔室202 可用來塗覆基板。基板塗覆腔室202類似於第1圖中的基 板腔室102。基板塗覆腔室202透過導管204和節流閥206 連接至風箱組2 0 8。風箱組2 0 8可能類似第1圖中的風箱 組 1 0 8。 風箱組2 0 8透過導管2 1 0、2 1 〇 ’以及濾油器2 1 2、2 1 2, I) 而連接至分離系統214、214,》濾油器212、212 ’類似於第 1圖中之濾油器13 0。雖然第2圖中繪出兩個分離系統 2 1 4、2 1 4,,但須了解到可使用更少或更多的分離系統,例 > 1個、3個、4個等等。 分離系統2 1 4包含隔離閥2 1 6與2 1 8、摻雜劑分離器 220以及矽分離器222。隔離閥2 1 6和2 1 8可將分離系統 214與系統200隔離開來。摻雜劑分離器220可以是吸收 分離基質或吸附分離基質。或者以摻雜劑過濾器(未顯 13 200918684 示)來取代摻雜劑分離器220。同樣地,矽分離器 是吸收分離基質或吸附分離基質,又或者矽分離 為矽過濾器。適當得過濾器例如塗有矽的蜂巢 • 質該陶莞可為摻雜有氧化纪的氧化鋁(ytt alumina) »分離系統2丨4’類似分離系統2丨4。 为離系統214和214,可連接至風箱224。風 由導管226與濾油器228而連接到氣箱230。氣 ζ\ 過導官232連接至基板塗覆腔室202。 基板塗覆腔室202亦可經由導管234與隔離 接至幫浦群238。幫浦群238透過導管240連接 242。減量器242可經由導管244連接至廠房排; 顯示)做進一步減量處理’或者排放至大氣中。 壓力計2 4 6連接至基板塗覆腔室2 〇 2且利 248而連接至節流閥2〇6。 雖然圖中未顯示,但可如同將系統丨〇 〇修 iOOA般的方式來修改系統2〇〇。此種修改方式是 C/ 來取代隔離閥236,該三向閥可依據腔室是處在 還疋沉積模式而決定將氣流轉向至幫浦群238或 組208。也可使用如系統i〇〇a _所示的控制器。 操作時’基板塗覆腔室202的操作方式類似 之基板塗覆腔室1〇2的操作方式,除了在沉積模 使用的試劑可能不會如同第1圖之系統1〇〇中所 過濕式洗滌器、冷凝阱與乾燥器,而是使未使用白 任何摻雜劑)從風箱組208經由導管21〇、21〇,以 222可以 器222可 狀陶瓷基 ria doped 箱2 2 4經 箱23 0透 閱23 6連 至減量器 &系統(未 用訊號線 &成系統 以三向閥 清洗模式 轉向風箱 於第1圖 式時,未 示般地通 9試劑(與 及濾油器 14 200918684 2 1 2、2 1 2,而進入分離系統2 1 4和2 1 4 ’。分離系統2 1 4 ' 2 1 4 ’ 藉著摻雜劑分離器 220、220’從未使用的試劑氣體流中移 除摻雜劑,且如上所述般,摻雜劑分離器 220、220’可為 吸收或吸附分離基質。如有需要可以分離並且收集摻雜 劑,以再次作為摻雜劑來使用。 分離系統214、214’利用矽分離器222、222’從未使用 的氣體流中去除矽化合物。矽分離器 2 2 2、2 2 2 ’可利用吸 ^ 收、吸附及/或過濾機制來移除矽、甲矽烷、二矽烷、三矽 烷與聚矽烷。可將從未使用試劑氣體流中分離移除的矽、 曱矽烷、二矽烷、三矽烷與聚矽烷收集起來,並且直接輸 送至矽院製造裝置,以提供矽烷給氣箱230而作為基板塗 覆腔室2 02中的反應試劑。 通過分離系統2 1 4、2 1 4,後淨得的未使用試劑氣體流 可能是高純度的氣氣’並且從分離系統2 1 4、2 1 4,流出而 進入風箱2 2 4。南純度氫氣可流經導管2 2 6與濾油器2 2 8, 在渡油器228處可將風箱224導入氫氣中的任何油類或其 I) 他高分子量污染物移除掉,而後進入氣箱230。 第2圖系統2 〇 〇之其餘部分的操作方式類似第ι圖之 系統100。 -第3圓繪示出本發明之基板塗覆系統300的示意圖_, 其包含一共生設備。系統3 00可包含氣箱3〇2,氣箱3〇2 透過導管304連接至基板塗覆腔室3〇6。 基板塗覆腔至306類似於先前參閱多個圖式所說明的 基板塗覆腔室。基板塗覆腔室3 〇6經由導管3〇8連接至幫 15 200918684 浦群310。幫浦群310可透過導管312而連接至減量器 314。減量器314則利用導管316連接至蒸氣發電機318。 蒸氣發電機318藉由導管322連接至冷卻塔324。於 热氣發 電機亦可以電線320連接至發電廠(power grid)或健存_ 置。冷卻塔324以導管326連接至減量器314»減量器314 經由導管3 2 8連接至廠房排放系統(未顯示)做進—步減量 處理或室排放至大氣中。壓力計330連接至基板塗覆腔室 3 06且透過訊號線3 3 4連接至節流閥3 3 2。 操作時,氣箱302經由導管304提供試劑與其他氣體 給基板塗覆腔室306。基板塗覆腔室306的操作類似於先 前參考..多個圖式所說明的基_板..塗覆.腔室。在沉積與腔室清 洗模式中,利用幫浦群3 1 0與節流閥3 3 2從基板塗覆腔室 3 06經由導管308抽出可能含有高含量氫氣與矽燒的排放 物。隨後使該排放物流經導管3 1 2而進入減量器3 1 4,且 在減量器3 1 4中燃燒該排放物。此外,使燃燒後的排放物 與減量器中的冷水接觸,以產生蒸氣且從導管316排放至 蒸氣發電機318中。蒸氣發電機318可產生電力並且通過 電線320傳輸至發電廠(未顯示)或電力儲存裝置(未顯 示)。蒸氣發電機318利用導管322輸送熱水(含有凝結後 的蒸氣)與蒸氣至冷卻塔324,以將熱水與蒸氣冷卻成冷 水。冷水可從冷卻塔324經由導管326回到減量器3丨4, 而在減量器3 1 4中用來冷卻燃燒後的排放物且再次生成蒸 氣。將來自減量器3 14且可能含有已氧化之未使用試劑與 已氧化之腔室清洗物的排放物經由導管3 2 8輪送到廠房排 16200918684; b) coating a substrate in the substrate coating chamber; c) discharging unused reagents from the substrate chamber; and d) recovering reagents to regenerate reagents for use in the substrate coating chamber . Various other aspects of the invention may be derived from the following detailed description, the appended claims and the appended claims. [Embodiment] An electronic device manufacturing process may use a large amount of reagents such as helium hydrogen. A large portion of these agents may be expensive and/or precious and may become waste through the process chamber without being used. In a typical substrate coating process prior to the present invention, it is possible to introduce helium hydrogen into the substrate coating chamber under substrate coating process conditions. Equivalent hydrogen and decane may pass through the substrate coating chamber without being used. These unused hydrogen and decane are treated as hazardous and/or hazardous emissions and this effluent is discharged to a suitable reduction. Such a reduction device may be a heat reduction device in which the discharge is heated and an oxidant is mixed to oxidize the discharge. The decane may not be expensive and may not be readily available in the future. In addition, the electronic device manufacturing equipment may be located at a relatively remote location and it is difficult to carry the reagent at the tube front, or the transportation is expensive. It is therefore desirable to be able to use these reagents so that fewer reagents are purchased from the supplier and less reagents are treated as waste. In one aspect, the present invention provides a method and apparatus for recovering hydrogen to be used again as a reagent in a substrate coating process. It can be done by coating from the second. The alkane and the test alkane with . Some of the chambers of the chamber are provided or re-supplied, and the unused reagent stream is discharged from the coating chamber of the substrate 7 200918684 and the reagent stream is washed to remove impurities. The washed unused reagent stream can then be passed through a cold trap or a refrigerated chiller' to purify the unused reagent stream in one step. The unused test stream can then be passed through a dryer' to remove water present in the unused reagent stream. The unused reagent stream is then sent back to a gas box' and the used reagent is supplied from the gas tank to the substrate coating chamber as a reagent. In another aspect, the present invention provides a method and apparatus for recovering hydrogen to reactivate a reagent in a substrate coating process and a method for recovering hydrazine to produce decane and then used as a reagent in a substrate coating process. With equipment. It can remove the unused agent flow from the substrate coating chamber and pass it through a filter to remove the dream, Shi Xizhuo, Er Mengzhuo, San Shi Xi from the unused reagent stream. Hyun and Ju Meng Xuan the reagent stream to remove impurities to achieve the method and equipment. Alternatively, the unused reagent can be passed through a dopant filter or an adsorption/absorption separation matrix to remove dopants present in the unused reagent stream. The main component of the unused reagent stream that has passed through the regulators is hydrogen' and is delivered to the gas box for reuse in the substrate coating chamber. FIG. 1 is a substrate coating of the present invention. A schematic of system 100 for recovering and reusing hydrogen as a reagent in a substrate coating process. The system 100 can include a substrate coating chamber 102 that can be used to coat a substrate. For example, in the manufacturing process of a solar panel, a germanium coating is usually formed on a substrate such as glass to form a polycrystalline germanium coating on the glass. In addition to glass, it is also not a nearby agent. In addition, it is not possible to remove the fluid. The application can be applied. 8 200918684 Other substrates, such as metal films, polymer substrates, etc., are used. In addition to being used to fabricate solar panels, system 100 can be used in other coating processes. The substrate coating chamber 102 is coupled to a throttle valve 106 via a conduit 104 and a throttle valve 106. The bellows group I 0 8 can contain multiple low pressure water cooled bellows' but non-water cooled bellows can also be used. The bellows are a low tolerance blower and have the advantage of requiring less energy to operate the bellows and less heat transfer to the gas when the bellows carries gas. In embodiments having more than one bellows (optional water-cooled) in the stack of bellows 108, the bellows are activated in batches to increase the pressure of the recovered gas stream while delivering less heat to the recovered gas stream. Any bellows or pump that increases the pressure of the recovery gas stream to, for example, between about 1 Torr and 40 psi, between about 20 and 30 p s i or between about 1 Torr and 20 p s i can be used. Also use higher or lower pressures. The bellows can reduce or eliminate any back pressure wave transfer from downstream to upstream of the bellows set 108. The bellows pack 108 is coupled to the wet scrubber 112 via a conduit u. The scrubber 112 can be, for example, a bubble column, a burr saddle, a packed bed column, or a scrub column. Any suitable wet scrubber can be used. The scrubber 112 is coupled to the condensation trap 116 via a conduit 114. Condensation trap II 6 may contain one or more cooling plates or other surfaces to condense gases to be removed from the gas stream. Condensation traps 16 can be isolated and bypassed for easy maintenance. The scrubber 112 and condensation trap H6 can be coupled via conduit 118 to a water treatment unit (not shown). The condensation trap 116 can be connected to the dry 200918684 dryer 122 via conduit 120. Dryer 122 can be a molecular sieve dryer or any other suitable dryer. Dryer 112 can be a single bed or multiple bed dryer. Dryer 122 can be coupled to bellows 126 via conduit 124. The bellows ι26 is similar to the bellows used in the bellows set 108. The bellows 126 can be connected to an oil filter 13 〇 by a conduit 1 28 . The oil filter 13 can be used to catch any oil, contaminants, lubricity reaction products and/or other high vapor pressure materials that may be present in the s-type flow from the bellows group. The oil filter 130 can be coupled to the air box 134 through a conduit 132. The gas box 134 can be used to mix reagents and other gases for introduction into the substrate coating chamber 102 through the conduit 136. The air box 丨 34 can be constructed such that it is connected to a plurality of reagent sources '(not shown) _ with it: gas: body source (not shown.). Reagents and other gases _ can be introduced into the gas tank through a mass flow controller (not shown) to deliver accurate mass flow rates of reagents and other gases. The substrate coating chamber 102 can also be connected to a pump stack 138 via a conduit 14 and/or an isolation valve 142. The pump cluster 138 can be connected to the decrementer 146 via a conduit 144. The reducer _146 may be a burn wet abatement tool or an electrothermal reducer or the like. Any reducer that can effectively reduce chamber cleaning can be used. The reducer 146 can be connected to a house exhaust system (not shown) via conduit 148 for further reduction or discharge to the atmosphere. The chamber pressure gauge 150 can be connected to the substrate coating chamber 1〇2 and can also be connected to the throttle valve 1〇6 via the communication line 152. The substrate coating chamber 1〇2 can be operated in two modes during operation. In the first mode of 10 200918684, the substrate coating chamber 102 can be performed, for example, to coat the substrate with a crucible. In the second mode, the plasma coating chamber 102 can be cleaned using a plasma. Hereinafter, the system will be described by taking enamel on a substrate as an example. However, it should be understood that the present invention is not limited to the use of reagents on a substrate through a process chamber device process, such as for solar panels, liquid crystal light-emitting diodes, thin films, and nanometer processes. In addition to deposition, etc., the invention can be applied to process patterns used to remove process chambers that are not desired or used to clean surfaces. In the first mode, i.e., the deposition mode, the gas box 134 supplies a gas to the substrate coating chamber 102. In the coating process, the meter 150 uses a combination of a throttle valve 106, a pump group 138, and an additive gas supplied to the process chamber 102 to control the pressure applied to the substrate. The bellows pack 108 can be provided through the conduit 1〇4 such that during the coating process, the tuyere gas stream can be pumped from the substrate coating chamber 102 via the throttle valve 106 and the conduit 110 using the bellows pack 1 〇8, And it is allowed to enter the scrubbing gas 1 丨 2 hydrogen and decane reagent can be contacted with water in the scrubber 112, removing decane, dioxane, trioxane and polydecane. The dopants in the gas stream can be removed from the scrubber by the conduits 随着 8 along with the sulphate medium. Subsequently, the remaining gas flows into the condensate fat 116. Condensation splicing 116 can remove residual gas in a coating process plasma (such as fluorine coating 10, any electronic display, there are applications. This material and / should be hydrogen · gas and hair. Available pressure • From air box 1 34 : Cover chamber 1 0 2 vacuum source. Catheter 104, excess hydrogen " unused from gas flow, wash.. sputum, trioxane, liquid ( Scrubber through the conduit 1 14 in the body flow of any of the 200918684 residual particles, moisture, 甲石夕烧, 二石夕院, 三; ^, dopant. Gas flow through the condensation trap 116 via the conduit 12 122 122 The gas stream is dried to a moisture content in the dryer 112. Ppm. The bellows 126 is then activated to deliver the gas tube 124, the conduit 128 and the oil filter 130 from the dryer, and the oil filter 13 is arable. Any oil or sub-volume and/or high vapor pressure species in the gas stream of 6 and/or wind phase 12. At this stage, the gas stream can be (and a hydrogen gas stream) and can then be fed The air box 丨 34, and the test in the substrate coating process for the substrate coating chamber 102 is in the first mode, that is, In the cleaning mode, the substrate can be cleaned using a plasma from a far (not shown). The plasma cleaning can be used to transport the plasma cleaning agent through the conduit 14 and the isolation conduit 144 into the reducer 146. And the material is washed in the reducer. The depleted electric charge cleaning material is passed from the reducer 146 to a factory scrubber (not shown) for further reduction to the atmosphere. G Figure 1A is the first A schematic diagram of another arrangement 100A of the substrate coating system 100. The system i〇〇a is similar to the figure: only except between the bellows group 108 and the substrate coating chamber 1〇2. A control system is included. Instead of connecting the bellows to the substrate coating chamber 1〇2 as in Figure 1, the bellows pack 108 is coupled to the conduit 40 via conduit 154 156. The conduit 140 can be connected by a group 138 a vacuum line to the substrate coating chamber 1〇2. The control signal line 160 is connected to the gas box 134, the substrate coating chamber is gathered and the drying is less than about 2, and the flow is removed from the other high-energy energy. It is high purity again as a cut. End plasma source Pu group 1 3 8 valve 142 with less electricity Clear conduit 148 or discharge system with Qin system 1 0 0, connection mode group 1Q8 straight and three-way valve is to help the pump 158 102 and three 12 200918684 to the valve 1 5 6. When operating, the system 100A operates similarly In the system of Figure 1, except that in the coating or deposition mode, the unused reagent gas does not enter the conduit i 〇 4 as the reagent gas in the system 100 of Figure i, but enters the conduit 140. It is then turned via valve 156 to enter windbox group 108 via conduit 154. In the chamber cleaning mode, valve} $6 is designed to allow the chamber purge stream to enter the pump group 38 via conduit 140. The p controller 1 5 8 determines that the substrate coating chamber 102 is in the cleaning mode and the deposition mode ' and the three-way valve 156 can be appropriately controlled. 2 is a schematic view of a substrate coating system 200 in accordance with another embodiment of the present invention. System 200 can include a substrate coating chamber 202 that can be used to coat a substrate. Substrate coating chamber 202 is similar to substrate chamber 102 in Figure 1. The substrate coating chamber 202 is coupled to the bellows set 208 through a conduit 204 and a throttle valve 206. The bellows group 2 0 8 may be similar to the bellows group 1 0 8 in Figure 1. The bellows set 2 0 8 is connected to the separation system 214, 214 through the conduit 2 1 0, 2 1 〇 'and the oil filter 2 1 2, 2 1 2, I), and the oil filter 212, 212 'is similar to the 1 oil filter 13 0. Although two separation systems 2 1 4, 2 1 4 are depicted in Figure 2, it is to be understood that fewer or more separation systems can be used, for example > 1, 3, 4, etc. The separation system 2 1 4 includes isolation valves 2 16 and 2 18 , a dopant separator 220, and a helium separator 222. Isolation valves 2 1 6 and 2 1 8 isolate separation system 214 from system 200. The dopant separator 220 may be an absorption separation substrate or an adsorption separation substrate. Alternatively, the dopant separator 220 may be replaced with a dopant filter (not shown in 2009-18684). Similarly, the helium separator is an absorption separation matrix or an adsorption separation matrix, or helium is separated into a helium filter. A suitable filter, such as a honeycomb coated honeycomb, may be a ytt alumina doped separation system 2丨4' similar to the separation system 2丨4. To the systems 214 and 214, a bellows 224 can be coupled. The wind is connected to the air box 230 by a conduit 226 and an oil filter 228. The gas ζ superconductor 232 is connected to the substrate coating chamber 202. The substrate coating chamber 202 can also be isolated from the pump cluster 238 via conduit 234. The pump cluster 238 is connected 242 via conduit 240. The reducer 242 can be connected to the plant row via conduit 244; shown) for further down-treatment' or discharge to the atmosphere. The pressure gauge 2 4 6 is connected to the substrate coating chamber 2 〇 2 and is connected to the throttle valve 2〇6. Although not shown in the figure, the system can be modified in the same way as the system is repaired iOOA. This modification is replaced by C/, which determines the diversion of the airflow to the pump cluster 238 or group 208 depending on whether the chamber is in the helium deposition mode. It is also possible to use a controller as shown in the system i〇〇a _. The operation of the substrate coating chamber 202 in a similar manner to the operation of the substrate coating chamber 1〇2 during operation, except that the reagent used in the deposition mold may not be as wet as the system of FIG. The scrubber, the condensing trap and the dryer, but not any white dopants are used) from the bellows group 208 via the conduits 21, 21, 222, 222, 222, ceramic ria doped boxes, 2 2 4 tanks 23 0 through 23 6 connected to the reducer & system (unused signal line & system to three-way valve cleaning mode to turn the bellows in the first figure, does not show the general pass 9 reagent (and and filter oil 14 2009 18684 2 1 2, 2 1 2, and into the separation system 2 1 4 and 2 1 4 '. Separation system 2 1 4 ' 2 1 4 ' by the dopant separator 220, 220 'unused reagent The dopant is removed from the gas stream, and as described above, the dopant separator 220, 220' can be a absorbing or adsorbing separation matrix. If desired, the dopant can be separated and collected to serve as a dopant again. The separation system 214, 214' utilizes the helium separators 222, 222' to never use the gas stream.矽Compound. 矽Separator 2 2 2, 2 2 2 'The 吸, methoxy, dioxin, trioxane and polydecane can be removed by absorption, adsorption and/or filtration mechanisms. The ruthenium, decane, dioxane, trioxane and polydecane removed in the stream are collected and sent directly to the brothel manufacturing apparatus to provide the decane gas supply tank 230 as a reaction in the substrate coating chamber 202. Reagents. By separating the system 2 1 4, 2 1 4, the unused unused reagent gas stream may be a high purity gas and flowing out of the separation system 2 1 4, 2 1 4 into the bellows 2 2 4 Southern purity hydrogen can flow through conduit 2 2 6 and oil filter 2 2 8 , at tanker 228 any bellows 224 can be introduced into the hydrogen or its I) high molecular weight contaminants are removed, The second portion of the system 2 is operated in a manner similar to the system 100 of the first embodiment. - The third circle shows a schematic view of the substrate coating system 300 of the present invention, which includes a symbiosis Equipment 3. System 3 00 can contain air box 3〇2, air box 3〇2 is connected through conduit 304 To the substrate coating chamber 3〇6. The substrate coating chamber to 306 is similar to the substrate coating chamber previously described with reference to the various figures. The substrate coating chamber 3〇6 is connected to the gang 15 via the conduit 3〇8. 200918684 Puqun 310. The pump cluster 310 can be coupled to the reducer 314 via conduit 312. The reducer 314 is coupled to the steam generator 318 by conduit 316. The steam generator 318 is coupled to the cooling tower 324 by a conduit 322. The hot gas generator can also be connected to a power grid or a power grid. Cooling tower 324 is connected by conduit 326 to a reducer 314» reducer 314 via conduit 3 28 to a plant exhaust system (not shown) for further step-down processing or chamber discharge to the atmosphere. The pressure gauge 330 is coupled to the substrate coating chamber 306 and is coupled to the throttle valve 3 3 2 via a signal line 3 3 4 . In operation, the gas box 302 provides reagent and other gases to the substrate coating chamber 306 via conduit 304. The operation of the substrate coating chamber 306 is similar to that of the prior reference: the base plate described in the various figures: the coating chamber. In the deposition and chamber cleaning mode, the pump cluster 306 and the throttle valve 323 are used to extract emissions from the substrate coating chamber 306 via conduit 308 that may contain high levels of hydrogen and helium. The effluent stream is then passed through conduit 3 1 2 into a reducer 3 1 4 and the effluent is combusted in a reducer 314. In addition, the combusted emissions are contacted with cold water in the reducer to produce steam and discharged from conduit 316 into steam generator 318. Steam generator 318 can generate electricity and be transmitted via line 320 to a power plant (not shown) or a power storage device (not shown). The steam generator 318 utilizes a conduit 322 to deliver hot water (containing condensed vapor) and vapor to the cooling tower 324 to cool the hot water and steam to cold water. The cold water can be returned from the cooling tower 324 via conduit 326 to the reducer 3丨4, and in the reducer 3 14 to cool the burned emissions and again generate steam. The effluent from the reducer 314 and possibly containing the oxidized unused reagent and the oxidized chamber wash is sent to the plant row via conduit 3 2 8

200918684 放系統(未顯示)做進一步減量處理,或者排放至 可利用壓力計3 3 0結合節流閥3 3 2、幫浦群 自氣箱302的添加氣體來控制基板塗覆腔室内 力。 第4圖繪示出基板塗覆系統4 0 0的示意圖。 類似第1圖之系統1 0 0,除了以下不同處。在系务 濾油器1 3 0並非如第1圖之系統1 0 0中所示般藉ξ 連接至氣箱134。取而代之的是,遽油器130透ϋ 連接至分離單元402。分離單元402可為薄膜分 來分離氫氣與惰氣。任何適合的分離器均可使用 元402可透過導管404連接至氪箱134,以及透 連接至惰氣源4 0 8。惰氣源4 0 8利用導管4 1 0連 134 ° 操作時,系統400的操作方式類似第1圖之 除了已下不同處。在系統400中,從惰氣源408 4 1 0將惰氣導入氣箱1 3 4中。惰氣可能是氫氣、 氣或其他合適的惰氣。惰氣可用來冷卻基板 1 02。且額外的好處是能夠有效地利用諸如矽烷與 劑。惰氣與未使用的試劑會一起流經該系統直到 純度氫氣進入導管1 3 2。惰氣/氫氣混合物隨後進 元402而將惰氣與氫氣分開。之後,氫氣從分離 經由導管404進入氣箱1 34。惰氣則從分離單元 導管406進入惰氣源408。再從惰氣源408經由 將惰氣輸送至氣箱1 3 4中。 、氣中。 3 10及來 的操作壓 系統400 ,400 中, ,導管1 32 :導管132 離器,用 。分離單 導管406 接至氣箱 系統1 0 0, 通過導管 氦氣、氬 塗覆腔室 氫氣等試 惰氣與高 入分離單 單元402 4 02經由 導管41 0 17 200918684 第5圖繪示基板塗覆系統5 0 0的示意圖。系統5 0 0類 似第2圖之系統200,除了下列不同處。在系統5 00中, 濾油器2 2 8並非如第2圖之系統2 0 0中所示般藉由導管2 2 6 連接至氣箱230。取而代之的是,濾油器228透過導管502 連接至分離單元5 04。分離單元5 04類似於第4圖中的分 離單元402。分離單元504可透過導管506連接至氣箱 230。分離單元504亦透過導管508連接至惰氣源510。惰 氣源5 1 0利用導管5 1 2連接至氣箱2 3 0。200918684 The discharge system (not shown) is further reduced, or discharged to the available pressure gauge 330. Combined with the throttle valve 3 3 2. The pump group controls the chamber coating chamber force by adding gas from the air box 302. FIG. 4 is a schematic view showing the substrate coating system 400. System 1 0 0 similar to Figure 1, except for the following differences. The system oil filter 130 is not connected to the air box 134 by the cymbal as shown in the system 100 of Fig. 1. Instead, the oil skimmer 130 is connected to the separation unit 402. Separation unit 402 can separate the hydrogen and inert gas for the membrane. Any suitable separator can be used to connect to the cassette 134 via conduit 404 and to the inert gas source 4 0 8 . When the inert gas source 4 0 8 is operated by the conduit 4 10 0 134 °, the operation of the system 400 is similar to that of Fig. 1 except that the difference has been made. In system 400, inert gas is introduced into gas box 134 from inert gas source 408 4 1 0. The inert gas may be hydrogen, gas or other suitable inert gas. Inert gas can be used to cool the substrate 102. An additional benefit is the efficient use of such solvents as decane. The inert gas and the unused reagent will flow through the system until the purity hydrogen enters the conduit 132. The inert gas/hydrogen mixture is then fed to element 402 to separate the inert gas from the hydrogen. Thereafter, hydrogen gas is separated from the gas inlet 134 via conduit 404. The inert gas then enters the inert gas source 408 from the separation unit conduit 406. The inert gas source 408 is then sent to the gas box 1 3 4 via inert gas. In the air. 3 10 and the operating pressure system 400,400, the conduit 1 32: the conduit 132 is used, with . The separation single conduit 406 is connected to the gas box system 100, and the test inert gas and the high separation separation unit unit 402 4 02 through the conduit helium gas, the argon coating chamber hydrogen gas, etc., through the conduit 41 0 17 200918684, FIG. A schematic diagram of the overlay system 500. System 5000 is similar to system 200 of Figure 2 except for the following differences. In system 500, the oil filter 2 28 is not connected to the air box 230 by the conduit 2 26 as shown in the system 2000 of Figure 2. Instead, the oil filter 228 is connected to the separation unit 504 through a conduit 502. The separation unit 504 is similar to the separation unit 402 in Fig. 4. Separation unit 504 can be coupled to air box 230 via conduit 506. Separation unit 504 is also coupled to inert gas source 510 via conduit 508. The inert gas source 5 10 is connected to the gas box 2 3 0 by means of a conduit 5 1 2 .

操作時,系統5 0 0的操作方式類似第2圖之系統2 0 0, 除了已下不同處。在系統5 00中,從惰氣源5 10通過導管 5 1 2將惰氣導入氣箱2 3 0中。如第4圖之系統4 0 0中所述, 惰氣可能是氫氣、氦氣、氬氣或其他合適的惰氣。惰氣在 系統500中的效果與惰氣在第4圖之系統400中的效果相 同。在系統4 0 0中,惰氣與未使用的試劑會一起流經該系 統直到惰氣與高純度氫氣進入導管5 0 2。惰氣/氫氣混合物 隨後進入分離單元5 04而將惰氣與氫氣分開。之後,氫氣 從分離單元504經由導管506進入氣箱23 0。惰氣則從分 離單元5 04經由導管50S進入惰氣源5 1 0。再從惰氣源5 1 0 經由導管5 1 2將惰氣輸送至氣箱23 0中。 以上敘述僅揭示數個本發明的示範性實施例。該領域 中具有通常知識者能輕易了解到可在不偏離本發明範圍下 做出上述設備與方法的變化態樣。例如,在系統4 0 0與5 0 0 中,未使用的試劑氣體可如系統1 00Α中所示般地流經一 真空管線與三向閥。此種修改後的系統可具有控制系統, 18 200918684 以根據該製程系統是處於沉積模式還是腔室清洗模式來決 定使來自製程腔室的排放物進行回收處理或是減量處理。 【圖式簡單說明】 第1圖是本發明適用於回收氫氣之基板塗覆系統的是 意圖; 第1 A圖是第1圖系統的另一個實施例之示意圖;In operation, the system 500 operates in a similar manner to the system 2 0 0 of Figure 2, except that it has been different. In system 500, inert gas is introduced into gas box 230 from gas source 510 through conduit 512. As described in System 400 of Figure 4, the inert gas may be hydrogen, helium, argon or other suitable inert gas. The effect of inert gas in system 500 is the same as that of inert gas in system 400 of Figure 4. In system 400, inert gas and unused reagents will flow through the system until inert gas and high purity hydrogen enter conduit 50. The inert gas/hydrogen mixture then enters the separation unit 504 to separate the inert gas from the hydrogen. Thereafter, hydrogen gas enters the gas tank 230 from the separation unit 504 via the conduit 506. The inert gas then enters the inert gas source 5 1 0 from the separation unit 504 via the conduit 50S. The inert gas is then transferred from the inert gas source 5 1 0 to the gas tank 23 via the conduit 5 1 2 . The above description discloses only a few exemplary embodiments of the invention. Variations of the above-described apparatus and methods can be readily made without departing from the scope of the invention. For example, in systems 400 and 5000, unused reagent gases may flow through a vacuum line and a three-way valve as shown in System 100. Such a modified system can have a control system, 18 200918684 to determine whether to recycle or reduce emissions from the process chamber depending on whether the process system is in a deposition mode or a chamber cleaning mode. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view of a substrate coating system suitable for recovering hydrogen according to the present invention; Fig. 1A is a schematic view showing another embodiment of the system of Fig. 1;

第2圖是本發明用於回收氫氣與矽之另一設備的示意 圖; 第3圖是本發明包含一共生設備之基板塗覆系統的示 意圖; 第4圖是第1圖系統的另一個實施例之示意圖; 第5圖是第2圖系統的另一個實施例之示意圖。 【主要元件符號說明】 100 、 100A 、 200 、 300 、 400 、 500 系統 102、202、306基板塗覆腔室 104 、 110 、 114 、 118 、 120 、 124 導管 1 0 6、2 0 6、3 3 2節流閥 1 0 8、2 0 8風箱組 112濕式洗滌器 116冷凝阱 122乾燥器 126、224風箱 128、 132、 136、 154 導管 130 濾油器 134、230、302 氣箱 138、23 8、3 1 0 幫浦群 140、144、148導管 142隔離閥 19 2009186842 is a schematic view of another apparatus for recovering hydrogen and helium according to the present invention; FIG. 3 is a schematic view of a substrate coating system including a symbiosis apparatus of the present invention; and FIG. 4 is another embodiment of the system of FIG. Figure 5 is a schematic view of another embodiment of the system of Figure 2. [Main component symbol description] 100, 100A, 200, 300, 400, 500 system 102, 202, 306 substrate coating chambers 104, 110, 114, 118, 120, 124 conduits 1 0 6 , 2 0 6 , 3 3 2 throttle valve 1 0 8 , 2 0 8 bellows group 112 wet scrubber 116 condensation trap 122 dryer 126, 224 bellows 128, 132, 136, 154 conduit 130 oil filter 134, 230, 302 gas box 138 , 23 8 , 3 1 0 pump group 140, 144, 148 duct 142 isolation valve 19 200918684

146 、 242 、 314 減量器 1 5 2通訊線路 1 5 8控制器 204、210、21(Γ 導管 21 4、2 1 4 ’分離系統 216、216、218、218、 220、220’摻雜劑分離器 226 、 232 ' 234 導管 248、334訊號線 150' 246 、 330 壓力計 1 5 6三向閥 1 6 0訊號線 2 1 2、2 1 2 ’、2 2 8 濾油器 2 3 6隔離閥 222、222’矽分離器 240、244 導管 304 ' 308、 312、 316、 322、 326、 328 導管 320電線 4 0 2分離單元 408惰氣源 5 0 4分離單元 3 1 8蒸氣發電機 3 24冷卻塔 404 、 406 、 410 導管 502 、 506 、 50 、 512 導管 5 1 0惰氣源146, 242, 314 reducer 1 5 2 communication line 1 5 8 controllers 204, 210, 21 (Γ conduit 21 4, 2 1 4 'separation system 216, 216, 218, 218, 220, 220' dopant separation 226, 232 '234 conduit 248, 334 signal line 150' 246, 330 pressure gauge 1 5 6 three-way valve 1 6 0 signal line 2 1 2, 2 1 2 ', 2 2 8 oil filter 2 3 6 isolation valve 222, 222' 矽 separator 240, 244 conduit 304 ' 308, 312, 316, 322, 326, 328 conduit 320 wire 4 0 2 separation unit 408 inert gas source 5 0 4 separation unit 3 1 8 steam generator 3 24 cooling Tower 404, 406, 410 conduit 502, 506, 50, 512 conduit 5 10 inert gas source

2020

Claims (1)

200918684 十、申請專利範圍: 1. 一種基板塗覆系統,其包含: 一基板塗覆腔室; 一氣箱,其連接至該基板塗覆腔室以提供試劑氣體至 該基板塗覆腔室;以及 一試劑回收系統,其連接至該基板塗覆腔室和該氣 箱,並且該試劑回收系統包括: 一濕式洗滌器,連接至該基板塗覆腔室; 一精洗器,連接至該濕式洗滌器;以及 一乾燥器,連接至該精洗器與該氣箱。 2. 如申請專利範圍第1項所述之基板塗覆系統,更包括一 風箱組,其位在該基板塗覆腔室與該濕式洗滌器之間。200918684 X. Patent Application Range: 1. A substrate coating system comprising: a substrate coating chamber; a gas tank connected to the substrate coating chamber to provide reagent gas to the substrate coating chamber; a reagent recovery system coupled to the substrate coating chamber and the gas box, and the reagent recovery system comprises: a wet scrubber coupled to the substrate coating chamber; a scrubber coupled to the wet a scrubber; and a dryer connected to the scrubber and the gas box. 2. The substrate coating system of claim 1, further comprising a bellows set between the substrate coating chamber and the wet scrubber. 3.如申請專利範圍第1項所述之基板塗覆系統,其中該精 洗器包括一冷凝味。 4. 如申請專利範圍第1項所述之基板塗覆系統,其中該精 洗器包括一冷卻機。 5. 如申請專利範圍第1項所述之基板塗覆系統,其中該乾 燥器包括一分子篩乾燥器。 21 200918684 6 _如申請專利範圍第1項所述之基板塗覆系統,更包括位 在該乾燥器與該氣箱之間的一風箱和一濾油器。 7 ·如申請專利範圍第1項所述之基板塗覆系統,更包括一 連接至該基板塗覆腔室的幫浦群,以及一連接至該幫浦群 的減量器。 8.如申請專利範圍第7項所述之基板塗覆系統,其中該濕 式洗滌器透過一真空管線而連接至該基板塗覆腔室,且該 真空管線將該幫浦群連接至該基板塗覆腔室。 9. 一種基板塗覆系統,其包括: 一基板塗覆腔室; 一氣箱,其連接至該基板塗覆腔室以提供試劑至該基 板塗覆腔室;以及 一試劑回收系統,其連接至該基板塗覆腔室和該氣 箱,其中該試劑回收系統包括: 一試劑過濾器;以及 一摻雜劑過濾器。 1 0.如申請專利範圍第9項所述之基板塗覆系統,其中該 試劑過濾器包含下列其中一者:矽過濾器、吸附分離基質 與吸收分離基質。 22 200918684 1 1 .如申請專利範圍第1 0項所述之基板塗覆系統,其中該 試劑過遽器受到加熱。 1 2.如申請專利範圍第9項所述之基板塗覆系統,其中該 摻雜劑過濾器包括一吸附分離基質與一吸收分離基質。 f) 13.如申請專利範圍第12項所述之基板塗覆系統,其中該 摻雜劑過渡器受到加熱。 1 4.如申請專利範圍第9項所述之基板塗覆系統,更包括 一風箱組,其位在該試劑過濾器與該基板塗覆腔室之間。 1 5.如申請專利範圍第9項所述之基板塗覆系統,更包括 位在該摻雜劑過濾器和該氣箱之間的一風箱與一濾油器 {} 1 6. —種操作一基板塗覆系統的方法,其包括: 供應超過一種的試劑至該基板塗覆腔室; 在該基板塗覆腔室中塗覆一基板; 從該基板塗覆腔室排放出未使用的試劑;以及 回收未使用的試劑以再次作為用於該基板塗覆腔室中 的試劑。 23 200918684 1 7.如申請專利範圍第1 6項所述之方法,其中回收該未使 用試劑以再次作為用於該基板塗覆腔室中之試劑的步驟包 括:洗滌該未使用的試劑,以去除雜質。 1 8.如申請專利範圍第1 7項所述之方法,更包括使用一冷 凝阱來去除於洗滌後殘留在該未使用試劑中的雜質。3. The substrate coating system of claim 1, wherein the finisher comprises a condensed odor. 4. The substrate coating system of claim 1, wherein the finisher comprises a cooler. 5. The substrate coating system of claim 1, wherein the dryer comprises a molecular sieve dryer. The substrate coating system of claim 1, further comprising a bellows and an oil filter between the dryer and the air box. The substrate coating system of claim 1, further comprising a pump group connected to the substrate coating chamber, and a reducer connected to the pump group. 8. The substrate coating system of claim 7, wherein the wet scrubber is coupled to the substrate coating chamber through a vacuum line, and the vacuum line connects the pump group to the substrate Coating the chamber. 9. A substrate coating system comprising: a substrate coating chamber; a gas box coupled to the substrate coating chamber to provide reagents to the substrate coating chamber; and a reagent recovery system coupled to The substrate coating chamber and the gas tank, wherein the reagent recovery system comprises: a reagent filter; and a dopant filter. The substrate coating system of claim 9, wherein the reagent filter comprises one of: a ruthenium filter, an adsorption separation substrate, and an absorption separation substrate. The substrate coating system of claim 10, wherein the reagent filter is heated. The substrate coating system of claim 9, wherein the dopant filter comprises an adsorptive separation matrix and an absorption separation matrix. The substrate coating system of claim 12, wherein the dopant transitioner is heated. The substrate coating system of claim 9, further comprising a bellows set between the reagent filter and the substrate coating chamber. 1. The substrate coating system of claim 9, further comprising a bellows and an oil filter between the dopant filter and the gas box. A method of operating a substrate coating system, comprising: supplying more than one reagent to the substrate coating chamber; coating a substrate in the substrate coating chamber; discharging unused reagents from the substrate coating chamber And recovering unused reagents again as reagents for use in the substrate coating chamber. The method of claim 16, wherein the recovering the unused reagent to serve as the reagent for the substrate coating chamber again comprises: washing the unused reagent to Remove impurities. 1 8. The method of claim 17, further comprising using a condensate trap to remove impurities remaining in the unused reagent after washing. 19.如申請專利範圍第17項所述之方法,更包括乾燥該經 洗滌後的未使用試劑。 2 0 ·如申請專利範圍第1 9項所述之方法,更包括供應該經 乾燥與洗滌後的未使用試劑至一氣箱,該氣箱適用以供應 超過一種的試劑至該基板塗覆腔室。 2 1 .如申請專利範圍第1 6項所述之方法,其中回收未使用 之試劑以再次作為用於該基板塗覆腔室中之試劑的步驟包 括:從該未使用試劑中過濾出矽。 2 2.如申請專利範面策2 1項所述之方法,更包括從該未使 用試劑中過濾出摻雜劑。 23.如申請專利範圍第21項所述之方法,更包括使用該過 濾出的矽來製造矽烷,以作為用於該基板塗覆腔室中的試 24 200918684 劑。 24 ·如申請專利範圍第2 1項所述之方法,更包括將已濾掉 矽的該未使用試劑輸送至一氣箱,以再次作為用於該基板 塗覆腔室中的試劑。 2519. The method of claim 17, further comprising drying the washed unused reagent. The method of claim 19, further comprising supplying the dried and washed unused reagent to a gas tank, the gas tank being adapted to supply more than one reagent to the substrate coating chamber . The method of claim 16, wherein the recovering the unused reagent to serve as the reagent for the substrate coating chamber again comprises: filtering the hydrazine from the unused reagent. 2 2. The method of claim 21, further comprising filtering the dopant from the unused reagent. 23. The method of claim 21, further comprising using the filtered ruthenium to produce decane as a test agent for use in the substrate coating chamber. 24. The method of claim 21, further comprising delivering the unused reagent that has been filtered out to a gas box to serve again as a reagent for use in the substrate coating chamber. 25
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