200910635 七、 指定代表圖： (一） 本案指定代表圖為：第（二）圖。 (二） 本代表圖之元件符號簡單說明： 2·具防護結構之發光二極體； 21:基板； 211 :第一表面； 22 :膠體層； 23 :凹框結構； 24 :導線；以及 25 :電極墊。 八、 本案若有化學式時，請揭示最能顯示發明特徵的化學式： 九、 發明說明： 【發明所屬之技術領域】 本發明提供一種具防護結構之發光二極 於在基板上設計凹框結構或凸框結構，達到防止水$疋*關 免發光二極體的驅動或封裝遭受破壞。 7氣入侵避 4 200910635 【先前技術】 發光二極體係為一種固態之半導體元件，利用電流通過 二極體内產生之二個載子相互結合，將能量以光的形式釋放 出來’具有體積輕巧、反應速度快及無污染等優勢，使發光 二極體應用領域逐漸跨足各產業界，且逐漸發展出高功率之 發光一極體’解決梵度不足之問題，使二極體逐漸跨入高效 率照明光源市場，並有逐漸取代傳統鎢絲燈之趨勢，是未來 替代傳統照明之潛力產品。 發光二極體技術的使用發展從號誌（sign)和訊息看板 (message board)延伸至汽車（automobile)之車内和車外 燈，以及交通信號燈。然而，發光二極體光源的光輸出對溫 度很敏感。事實上，過高的溫度會使發光二極體的品質永久 衰竭（permanently degraded)。像這樣的應用就需要讓發光 二極體的基板擁有高度散熱能力、良好的抗熱性和高的機械 強度。為了維護發光二極體的高效能，因此有必要使發光二 極體擁有高度散熱能力，以儘速帶走過高的熱。 遂，凊參閱第一圖，係為習知技藝之典型高功率發光二 極體結構剖面圖。圖中，發光二極體結構丨係包括有基板ti、 發光二極體晶片12以及膠體層13。 發光二極體晶片12設置於基板11上，藉由基板丨丨上之 導線ill連接晶片12上之電極（圖面未顯示）與電極墊15, 使其導通以驅動發光二極體晶片12發光。 200910635 土 - 層13覆蓋於發光二極體晶片12上，以保護整個發 、，亟〜"構1不至於受外界環境影響而降低效能。 然而’此種膠體層13附著於基板u上的方式，容易因 極體Ba# 12運作所導致的熱脹冷縮效應，以及膠體層 :、、土? 11結合時就存在的微小縫隙 ，使得水氣14由這些 、’、：:入’ 1與熱脹冷縮效應彼此互相加乘的惡性循環下， 變大讓膠體層13剝離。並且，水氣14易織極 墊15、導線11]、曰μ 曰曰片12上電極（圖面未顯示）及彼此間的 二：曰生變異，因而破壞發光二極體結構1導致降低發光二 曰s片12的發光效率’更甚者將導 失效。 。上述所&出的各種問題。本發明人基於多年從事 ^九:諸夕實務經驗’經多方研究設計與專題探討遂於本 明提出-種基板表面形成凹框或凸框之具防護結構之發光 二極體以作為前述賊-實财式與依據。 【發明内容】 入侵的效果 有鑑於上述課題，本發明之主要目的，在於解決上述缺 失，係於本發明對發光二極體重新設計，於具防護結 光二極體之基板上設計喃結構或凸框結構來朗防止水氣 緣是’為達上述目的’依本發明之具防護結構之發光二 6 200910635 極體’此發光二極體中包含有__發光二極體晶片、 及一膠體層 基板以 發光二極體晶片設置在基板上； 基板具有一凹框結構於發光二極體晶片之周圍； 膠體層包覆發光二極體晶片且填入凹框結構中。 上述之凹框結構可依設計上的需要有單層 ===是r發一之周= 外部電極結構連接發光二極體晶片，以驅動發光二極更體^片二 此外部電極結構為電極墊或導線等組合樣式 具有通道之不封閉圖形上的外部電極結構設計，電極塾可签 由此通道佈線導出，以驅動發光二極體晶片發光；於封圖 =的構設計可以是導線跨過凹框結構與電極塾 動發先二極體晶片；或是將電極塾形成於凹框社 構之局枝面上及基板之表面，以軸發光二極體晶片。、、，。 另外，依本發明之另-具賴結構之發光二極體 光二極體中包含有—發光二極體晶片、—基板以及—膠體層。 發光二極體晶片設置在基板上； 基板具有一凸框結構於發光二極體晶片之周圍； 膠體層包覆發光二極體晶片及凸框結構。 上述之凸框結構可依設計上的需要有單層凸框或多 框，此些凸框結構更可以是環繞於發光二極體晶片之周^具 7 200910635 有一通道之一不封閉圖形’或是一封閉圖形。基板上更包含 一外部電極結構連接發光二極體晶片，以驅動發光二極體晶 片° 此外部電極結構為電極墊或導線等組合樣式，例如：於 具有通道之不封閉圖形上的外部電極結構設計，電極墊可經 由此通道佈線導出，以驅動發光二極體晶片發光；於封閉圖 形上的外部電極結構設計可以是導線跨過凸框結構與電極墊 連接，以驅動發光二極體晶片；或是將電極墊形成於凸框結 構之局部表面上及基板之表面，以驅動發光二極體晶片。 一同時，依本發明之再一具防護結構之發光二極體，此發 光一極體中包含有一發光二極體晶片、一基板以及一膠體層。 發光二極體晶片設置在基板上； 基板具有一凹框結構及一凸框結構於發光二極體晶片之 周圍； 膠體層包覆發光二極體晶片及凸框結構，並且填入凹框 =即’可將凹框結構與凸框結構相互搭配，形成同時具 與凸框之結構。上述之凹框結構及凸框結構可依設計 料配要有單層凹框或多層凹框，單層凸框或多層凸框相互 片°之用=凹框結構或凸框結構更可以是環繞於發光二極體晶 板上2具有—通道之—不封閉圖形，或是一封關形。基 i含-外部電極結構連接發光二極體晶片 ，以驅動發 8 200910635 光二極體晶片。 於 電極墊可經 以驅 此外部電極結構為電極塾或導線等組合 具有通道之不封閉圖形上的外部電極結構設計=例如 由此通道佈線導出，以驅動發光二極體晶片屬 形上的外部電極結構料可以是導線跨過凹框蠢=閉圖 構與電極墊連接，以驅動發光二極體晶片；或結 成於凹框結構與凸㈣構之局部表面上及電極塾形 動發光二極體晶片。 表 的避免膠體層剝離，係 更進一步，為達本發明之另一目 以增 於本發明之各具防護結構之發光二極體之基板上凹框布、 凸框結構之外_成有—通孔結構。_，通孔結構中。j 入膠體層，使膠體層灌人達基板另—面後凝結，嵌卡於基板 上。更甚者，可以於通孔結構之内壁上形成凹凸表面土 加嵌卡的應力強度。 承上所述’因依本發明之具防護結構之發光二極體，藉 由设置凹框結構或凸框結構以阻礙水氣，防止水氣造成發光 二極體封裝内之電極結構及焊點產生變異，或避免封裝之膠 體層與基板產生剝離’以維持較佳的發光二極體運作效能。 更藉由通孔結構使膠體層穩固附著於基板上更具發光二極體 封裝的效果。 兹為使貴審查委員對本發明之技術特徵及所達成之功 效有更進一步之瞭解與認識，下文謹提供較佳之實施例及相 200910635 關圖式以為輔佐之用’並以詳細之說明文字配合說明如後。 【實施方式】 為讓本發明之上述目的、特徵、和優點能更明顯易懂， 下文依本發明之具有防護結構之發光二極體特舉較佳實施 二並配合所附相關圖式，作詳細說明如下，其中相同的元 件將以相同的元件符號加以說明。 發光:極==;二,第，圖’係本發明之具防護結構之 示，本發日狀且㈣Γ 解及剖面示意圖。如圖所 晶片12、-A板^構之發光"極體2包含—發光二極體 乃 基板21以及一膠體層22。 2i上^2第 1凹框結構23，此凹框結構23設於基板 形，並於單層_二二^ 23為單相框之封閉圖 同時™之材質之二 此發===於基板21之第-表面⑴上， 接發光二極體晶；i 12 ^圍為凹框結構23,並由導線24連 25，以驅動發光面未顯示）與電極墊 膠體層22包霜&欢+ _ 入於凹框結構23 Ϊ及:士 晶片12 ’此膠體層22更填 丹0 ^及覆盍於電極墊25上； 200910635 氣侵入赠發光人侵之路徑’以達到阻絕水 體晶片12之表面電極(圖::之，材料’如··發光二極 2生免 發光===第五圖’係本發明之具防護結構之 示，本發明之具防護二如圖所 晶片12、-基板31以及—侧32體3包广發光二極體 之- 而具9^ 一凸檀結構33 ’此凸框結構33設於美板31 並之且第^ 時，此基板31之材質-般為高導熱材質形所成製有成電極备34’同 發光二極體晶片12設置於基板3 ::=:::r_框結構33, t連 34,以驅動發光二極體=5^(;_未顯不）與電極墊 覆：==::=12一包 氣侵===== 200910635 體晶片12之表面電極（圖面未顯示）、導線24及焊點（導線 24與電極墊34或發光二極體晶片12表面電極之連接處）變 異；或避免使膠體層32剝離。膠體層32之材質一般包括矽 膠或環氧樹脂。 睛一併參閱第六圖及第七圖，係本發明之具防護結構之 發光二極體之第三實施例之外觀分解及剖面示意圖。如圖所 示，本發明之具防護結構之發光二極體4包含一發光二極體 晶片12、一基板41以及一膠體層42。 基板41上具有一凹框結構23及一通孔結構43，此凹框 結構23及通孔結構43設於基板41之一第一表面211，且凹 框結構23為單層凹框之封閉圖形，通孔結構43設置於凹框 結構23之外圍，通孔結構33之内壁更形成為一凹凸表面 431 ’並在單層凹框外圍之第一表面211上形成有電極墊44， 同時，基板41之材質一般為高導熱材質所製成； 發光二極體晶片12設置於基板41之第-表面211上， 此發光二極體W12之厢為凹框結構23，並由導線％連 接發光二極體；丨2之表面電極（圖面未顯示）與電極，以 驅動發光二極體晶片12發光； 12 ’此膠體層42更填 上； 膠體層42包覆此發光二極體晶片 入於凹框結構23中及覆蓋於電極墊44 ，以達到阻絕水 ，如：發光二極 藉此凹框結構23來延長水氣入侵之辭 氣侵入破壞發光二極體4結構内之金屬材料 12 200910635 44、導線24 12表面電極 體曰曰片12之表面電極（圖面未顯示）、電極塾 及焊點（導線24與電極塾44或發光二極體晶片 之連接處）產生變異； 曰片 同時，因膠體層42填入於通孔結構4 =凹凸表面431栽卡，且凝結於基板41相對=: 層4丄面：::42穩固附著於基板41上’避廳 材質：括：=之發光效能。一 請一併參閱第，及第九®，係本發明之具防護結構之 發光一極體之第四實施例之外觀分解及剖面示意圖。如圖所 本發明之具防護結構之發光二極體5包含一發光二極體 晶片12、一基板51以及一膠體層52。 基板51具有一凸框結構33及一通孔結構53，此凸框結 構33及通孔結構53設於基板51之一第一表面211 ’且凸框 結構33為單層凸框之封閉圖形，此通孔結構53設置於凸框 結構33之外圍，通孔結構53之内壁更形成為一凹凸表面 531，而單層凸框外圍之第一表面211上形成有電極墊54,同 時，基板51之材質一般為高導熱材質所製成； 發光二極體晶片12設置於基板51之第一表面211上， 此發光二極體晶片12之周圍為凸框結構33 ’並由導線24連 接發光二極體晶片12之表面電極（圖面未顯示）與電極墊 54，以驅動發光二極體晶片12發光； 13 200910635 膠體層52包覆此發光二極體晶片⑴ 覆凸框結構33及覆蓋於電極墊54上. 匕胗體層52亦包 藉此凸框結構33來延長水氣入侵 氣侵入破壞發光二極體5結構内之金屬 二建到阻絕水 體晶片12之表面電極（圖面未顯示）赫：發光二極 及焊點（導線24與電極墊54或發光二 、導線24 之連接處）產生變異； aa 12表面電極 同時，因膠體層52填入於通孔結構53中， 53之凹凸表面531嵌卡，且於凝結於基板瞻二 211之另一面，使膠體層53穩固附著於基板51上子第一表面 層52制離，以維垃欢止. i ’避免膠體 層W讎以維持發光二極體5之發光效能。 材質一般包括切膠或環氧細旨。 層52之 請參閱第十W，係本發明之具防護結敎發光 第五狀基板及發光二極體晶片之立體示意圖。如圖所 =，本發明之具防護結構之發光二極體6尚未填人膠體層， 其包含-基板61、-發光二極體晶片12以及一電極結構64。 基板61上具有_凹框結構62、一凸框結構63及電極結 構64丄此凹框結構62、凸框結構63及電極結構64設於基板 第表面211 ’凹框結構62為單層凹框之封閉圖形， 凸框結構63,單層凸框之封_形’電極結構64係於凹框 結構62内之第一表面211形成電極整641 ’凸框結構63外之 第-表面211形成電極塾643，及於凹框結構62及凸框結構 14 200910635 二之，部表面上形成電極墊Μ2，由電轉⑽連接電極塾 b41 ' 643 ; 此I發光一極體晶片12設置於基板61之第一表面211上， 光〜極體晶片12橫跨於電極塾641上，且電極塾641的 周圍為凹樞結構62，同時，凹框結構62之周^有凸框結構 DO I 一藉由電極塾641、642及643彼此的連接形成驅動連接發 $二極體晶片12之電極結構64。基板61之材質一般包括為 南導熱材質所製成。 遂，構成第五實施例之具防護結構之發光二極體6，藉由 设置凹框、凸框及電極的結構設計於填入膠體層後，可達到 阻絕水氣侵入破壞發光二極體6結構内之金屬材料，如：發 光二極體晶片12之表面電極（圖面未顯示）、電極墊641、 642'643及焊點（電極墊641與發光二極體晶片12表面電極 之連接處）產生變異；或避免使膠體層剝離，以及解決習知 發光一極體結構之缺點。 請參閱第Η 圖，係本發明之具防護結構之發光二極體 之第六實施例之基板及發光二極體晶片之立體示意圖。如圖 所示’本發明之具防護結構之發光二極體7尚未填入膠體層’ 其包含一基板71、一發光二極體晶片12以及一電極結構72。 基板71上具有一凹框結構23及電極結構72，此凹榧結 構23及電極結構72設於基板71之一第一表面21i，凹樞詰 15 200910635 =3為—單層凹框之封關形，電極結構72係於魄結構以 内之第-表面211形成電極墊721，凹框結構23外之第一表 形成電極墊722，及導線723橫跨於凹框結構23上連 接電極塾721、了22 ; 發光二極體晶片12設置於基板71之第一表面211上， 此發光二極體晶片12橫跨於電極墊721上，且電極墊721的 周圍為凹框結構23 ; 藉由電極藝72卜722及導線723形成驅動發光二極體晶 片12發光之電極結構72。基板71之材質一般包括為高導孰 材質所製成。 ’ 遂，構成第六實施例之具防護結構之發光二極體7，藉由 设置凹框及電極的結構没計於填入膠體層後，可達到阻絕水 氣侵入破壞發光二極體7結構内之金屬材料，如··發光二極 體晶片12之表面電極（圖面未顯示）、電極整κι、722、導 線723及焊點（電極墊721與發光二極體晶片12表面電極或 導線723之連接處）產生變異；或避免使膠體層剝離，以及 解決習知發光二極體結構之缺點。 請參閱第十二圖及第十三圖’係本發明之具防護結構之 發光二極體之第七實施例之基板及發光二極體晶片之立體及 剖面示意圖。如圖所示’本發明之具防護結構之發光二極體8 尚未填入膠體層’其包含一基板81、一發光二極體晶片a 以及一電極結構82。 200910635 基板81上具有一凹框結構23及電極結構82，此凹框結 構23及，極結構82設於基板81之一第一表面2ιι，凹框^ 構23,為單層凹框之封_形，電極結構犯係於凹框結構烈 内之第一表面211形成電極墊821，凹框結構23中之局部内 侧231表面上形成電極墊822，及凹框結構23外之第三表面 211形成電極墊823 ’電極墊823連接電極墊82卜822 ; 發光二極體晶片12設置於基板81之第一表面2丨1上， 此發光二極體晶片12橫跨於電極墊821上，且電極墊821的 周圍為凹框結構23 ; 藉由電極墊82卜822及823彼此的連接形成驅動發光二 極體晶片12發光之電極結構82，且基板81之 為高導熱材質所製成。 遂’構成第七實施例之具防護結構之發光二極體8 設置凹框及電極的結構設計於填人膠體層後，可達到阻^水 氣侵入破壞發光二極體8結構内之金屬材料，如：發光二 體晶片12之表面電極（圖面未顯示）、電極替82ι、& 及焊點（電雜82i與發光二極體晶片12表面電極 產生變異；或避免使膠體層剝離，以及解決習知 = 請參閱第十四圖，係本發明之具防護結構之發光 之第八實施例之凹框結構及電極結構之俯視示意^。: 示，本發狀具防賴構之發光二_ 9尚未獻勝體層， 200910635 其包含一基板91、一發光二極體晶片12以及一電極結構犯。 基板91上具有一凹框結構93及電極結構82，此凹框結 構93及電極結構82設於基板91之一第一表面211，凹框結 構93為單層凹框之具有一通道931之不封閉圖形，電極結構 92係於凹框結構93内之第一表面211形成電極墊921，且經 由凹框結構93之通道931形成電極墊922，透過通道931延 伸至凹框結構93外； 發光二極體晶片12設置於基板91之第一表面211上， 此發光二極體晶片12橫跨於電極墊921上，且電極墊921的 周圍為凹框結構93 ; 藉由電極墊921及922彼此的連接形成驅動發光二極體 晶片12發光之電極結構92。基板91之材質一般包括為高導 熱材質所製成。 遂，構成第八實施例之具防護結構之發光二極體9，藉由 ，置凹框及電極的結構設計於填人膠體層後，可達到阻^水 氣侵入破壞發光二極體9結構内之金屬材料，如：發光二極 體晶片12之表面電極（圖面未顯示）、電極墊卯卜犯^及 點（電極墊921與發光二極體晶片12表面電極之連接處 ^變異；或避紐雜層_，以及解決習知 構之缺點。 、夂 請參閱第十五圖，係本發明之具防護結構之發光二 之第九實施例之凹框結構及電極結構之俯視示意圖。如圖= 200910635 不’本發明之具防護結構之發光二極體A尚未填入膠體層， 其包含一基板A1、一發光二極體晶片12以及一電極結構A2。 基板A1上具有一凹框結構A3及電極結構A2，此凹框結 構A3及電極結構A2設於基板A1之一第一表面211，凹框結 構A3為多層凹框，且具有一通道A31之不封閉圖形，電極結 構A2係於凹框結構A3内之第一表面211形成電極墊A21，且 經由凹框結構A3之通道A31形成電極墊A22，透過通道A31 延伸至凹框結構A3外； 發光二極體晶片12設置於基板A1之第一表面2ιι上， 此發光二極體晶片12橫跨於電極墊A21上，且電極墊A2i的 周圍為凹框結構A3 ; 藉由電轉A21及A22彼此的連接形成驅動發光二極體 =電極、賴Μ。基板Μ H她括為高導 4遂，構成第九實_之赌護結構H極體A，藉由 =凹框及電極的結構設計於填人_層後，可達到阻絕水 dm二極體A結構内之金屬材料，如:發光二極 點曰曰片12之表面電極（圖面未顯示）、電極塾A21、他及焊 點（電極墊A21與發光二極體晶片12表面電極之連 S點或避免使膠體層剝離，以及解決習知發光二極體結 上述第十-至十五圖之實施例，可為封閉_之凹框及 200910635 構使用’或可為不封閉圖形之凹框及凸框結構同 =用閉圖形與不封閉圖形之凹框或‘ :目士 卜圍亦可以没有通孔結構’且此通孔結構之内壁 亦^有-凹凸表面，以增加膠體層的附著於基板的附著力。 ,以上所述僅為舉例性，而非為限制性者。 按，凡熟悉該 項技術人士，依據本翻·露之技_容，在任何未脫離 本發明之精神與其進行之等效修改或變更，均應 包含於後附之申請專利範圍中。 【圖式簡單說明】 第-圖係為習知技藝之典型高辨發光二極體結構剖面圖； 第二圖係本發明之具防護結構之發光二極體之第一實施例 之外觀分解示意圖； 第三圖係本發明之具防護結構之發光二極體之第一實施例 之剖面示意圖； 第四圖係本發明之具防護結構之發光二極體之第二實施例 之外觀分解示意圖； 第五圖係本發明之具防護結構之發光二極體之第二實施例 之剖面示意圖； 苐/、圖係本發明之具防護結構之發光二極體之第三實施例 之外觀分解示意圖； 第七圖係本發明之具防護結構之發光二極體之第三實施例 200910635 之剖面示意圖； 第八圖係本發明之具防護結構之發光二極體之第四實施例 之外觀分解示意圖； 第九圖係本發明之具防護結構之發光二極體之第四實施例 之剖面示意圖； 第十圖係本發明之具防護結構之發光二極體之第五實施例 之基板及發光二極體晶片之立體示意圖； 第十一圖係本發明之係本發明之具防護結構之發光二極體 之第六實施例之基板及發光二極體晶片之立體示意 圖； 第十二圖係本發明之具防護結構之發光二極體之第七實施 例之基板及發光二極體晶片之立體示意圖； 第十三圖係本發明之具防護結構之發光二極體之第七實施 例之基板及發光二極體晶片之剖面示意圖； 第十四圖係本發明之具防護結構之發光二極體之第八實施 例之凹框結構及電極結構之俯視示意圖；以及 第十五圖係本發明之具防護結構之發光二極體之第九實施 例之凹框結構及電極結構之俯視不意圖。 21 200910635 【主要元件符號說明】 I :發光二極體結構； II :基板； III :導線； 12 :發光二極體晶片； 13 :膠體層； 14 :水氣； 15 :電極墊； 2:具防護結構之發光二極體； 21 :基板； 211 :第一表面； 22 :膠體層； 23 :凹框結構； 231 :内側； 24 :導線； 25 :電極墊； 3:具防護結構之發光二極體； 31 :基板； 32 :膠體層； 33 :凸框結構； 22 200910635 34 :電極墊； 4:具防護結構之發光二極體； 41 :基板； 42 :膠體層； 43 :通孔結構； 431 :凹凸表面； 44 :電極墊； 5:具防護結構之發光二極體； 51 :基板； 52 :膠體層； 53 :凸框結構； 531 :凹凸表面； 54 :電極墊； 6:具防護結構之發光二極體； 61 .基板， 62 :凹框結構； 63 :凸框結構， 64 :電極結構； 641 :電極墊； 642 :電極墊； 23 200910635 643 :電極墊； 7:具防護結構之發光二極體； 71 :基板； 72 :電極結構； 721 :電極墊； 722 :電極墊； 723 :導線； 8:具防護結構之發光二極體； 81 :基板； 82 .電極結構， 821 :電極墊； 822 :電極墊； 823 :電極墊； 9:具防護結構之發光二極體； 91 :基板； 92 .電極結構， 921 :電極墊； 922 :電極墊； 93 :凹框結構； 931 :通道； 24 200910635 A:具防護結構之發光二極體； A1 :基板； A2 :電極結構； A21 :電極墊； A22 :電極墊； A3 :凹框結構；以及 A31 :通道。 25200910635 VII. Designated representative map: (1) The representative representative of the case is: (2). (2) The symbol of the symbol of this representative diagram is briefly described: 2. LED with protective structure; 21: substrate; 211: first surface; 22: colloid layer; 23: concave frame structure; 24: wire; : Electrode pad. 8. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: IX. Description of the invention: [Technical field of the invention] The present invention provides a light-emitting diode with a protective structure for designing a concave frame structure on a substrate or The embossed frame structure prevents damage to the drive or package of the light-emitting diode. 7 gas intrusion avoidance 4 200910635 [Prior Art] The light-emitting diode system is a solid-state semiconductor component, which uses current to pass through two carriers generated in the diode to combine and release energy in the form of light. The advantages of fast reaction speed and no pollution make the application field of light-emitting diodes gradually reach various industries, and gradually develop a high-powered light-emitting body to solve the problem of insufficient vanguard, so that the diode gradually enters the high The efficiency of the lighting source market, and the trend to gradually replace the traditional tungsten filament lamp, is the potential to replace traditional lighting in the future. The use of LED technology has evolved from sign and message boards to in-vehicle and exterior lights, as well as traffic lights. However, the light output of a light-emitting diode source is sensitive to temperature. In fact, too high a temperature will permanently degraded the quality of the light-emitting diode. Applications like this require a substrate with a high level of heat dissipation, good heat resistance and high mechanical strength. In order to maintain the high performance of the light-emitting diode, it is necessary to make the light-emitting diode have a high heat-dissipating ability to take away excessive heat as quickly as possible.遂,凊 Referring to the first figure, it is a cross-sectional view of a typical high power light emitting diode structure of the prior art. In the figure, the light-emitting diode structure includes a substrate ti, a light-emitting diode wafer 12, and a colloid layer 13. The LED chip 12 is disposed on the substrate 11. The electrode (not shown) on the wafer 12 and the electrode pad 15 are connected by the wire ill on the substrate, and are electrically connected to drive the LED chip 12 to emit light. . 200910635 Soil - Layer 13 is overlaid on the LED 12 to protect the entire hair, and the structure is not affected by the external environment to reduce the efficiency. However, the manner in which the colloid layer 13 adheres to the substrate u is liable to the thermal expansion and contraction effect caused by the operation of the polar body Ba# 12, and the micro-gap existing when the colloid layer: and the soil 11 are combined, so that The water vapor 14 is separated by the vicious cycle in which these, ',::' 1 and the thermal expansion and contraction effect are mutually multiplied. Moreover, the water vapor 14 is easy to weave the pole pad 15, the wire 11], the upper electrode of the 曰μ 曰曰 12 (not shown) and the two of them: the morphological variation, thereby destroying the light-emitting diode structure 1 and causing the luminescence to be reduced The luminous efficiency of the two-slices 12 is even worse. . Various problems mentioned above & The present inventors based on many years of experience in the work of the ninth: the eve of the experience of the eve of the study of the multi-party research and the special discussion 遂 本 提出 提出 种 种 种 种 种 种 种 种 种 种 种 种 种 种 种 种 种 种 种 种 种 种 种 种 种 种Real financial style and basis. SUMMARY OF THE INVENTION The effect of the intrusion is in view of the above problems, and the main object of the present invention is to solve the above-mentioned defects, and the present invention redesigns the light-emitting diode to design a structure or a convex on a substrate having a protective junction diode. The frame structure is used to prevent the water gas edge from being the 'protective structure according to the present invention. 2 200910635 Polar body' The light-emitting diode includes a light-emitting diode chip and a colloid layer. The substrate is disposed on the substrate as a light emitting diode chip; the substrate has a concave frame structure around the light emitting diode chip; the colloid layer covers the light emitting diode chip and is filled in the concave frame structure. The above-mentioned concave frame structure can have a single layer according to the design requirements. === is a cycle of r-one. The external electrode structure is connected to the light-emitting diode chip to drive the light-emitting diode to be a body. The external electrode structure is an electrode. The combination pattern of the pad or the wire has an external electrode structure design on the non-closed pattern of the channel, and the electrode can be led out by the channel wiring to drive the light emitting diode chip to emit light; the structure of the sealing frame can be a wire crossing The concave frame structure and the electrode swell the first diode wafer; or the electrode 塾 is formed on the surface of the concave frame structure and the surface of the substrate to illuminate the diode chip. ,,,. In addition, the light-emitting diode photodiode according to another embodiment of the present invention includes a light-emitting diode wafer, a substrate, and a colloid layer. The light emitting diode chip is disposed on the substrate; the substrate has a convex frame structure around the light emitting diode chip; the colloid layer covers the light emitting diode chip and the convex frame structure. The above-mentioned convex frame structure may have a single-layer convex frame or a multi-frame according to the design requirements, and the convex frame structure may be a surrounding of the LED chip 7 200910635. One of the channels does not close the graphic' or It is a closed figure. The substrate further comprises an external electrode structure connected to the LED chip to drive the LED chip. The further electrode structure is a combination pattern of electrode pads or wires, for example, an external electrode structure on a non-closed pattern having a channel. The electrode pad can be exported through the channel to drive the LED to emit light; the external electrode structure on the closed pattern can be designed to connect the wire to the electrode pad across the convex frame structure to drive the LED chip; Or an electrode pad is formed on a partial surface of the convex frame structure and a surface of the substrate to drive the LED chip. At the same time, according to another LED structure of the present invention, the light-emitting diode comprises a light-emitting diode chip, a substrate and a colloid layer. The light emitting diode chip is disposed on the substrate; the substrate has a concave frame structure and a convex frame structure around the light emitting diode chip; the colloid layer covers the light emitting diode chip and the convex frame structure, and is filled with the concave frame= That is, the concave frame structure and the convex frame structure can be matched with each other to form a structure having both a convex frame and a convex frame. The above-mentioned concave frame structure and convex frame structure can be arranged with a single-layer concave frame or a multi-layer concave frame according to the design material, and the single-layer convex frame or the multi-layer convex frame can be used for each other. The concave frame structure or the convex frame structure can be surrounded. The light-emitting diode plate 2 has a - channel - no closed pattern, or a closed shape. The base i-external electrode structure is connected to the LED chip to drive the photodiode wafer of 200910635. The electrode pad can be driven to drive the external electrode structure into an electrode or a combination of wires, such as an external electrode structure having a channel on an unclosed pattern. For example, the channel wiring is derived to drive the external portion of the light-emitting diode wafer. The electrode structure material may be a wire across the concave frame stupid = closed structure connected to the electrode pad to drive the light-emitting diode wafer; or formed on the partial surface of the concave frame structure and the convex (four) structure and the electrode-shaped moving light-emitting diode Body wafer. Further avoiding the peeling of the colloidal layer of the watch, further, in addition to the concave frame cloth and the convex frame structure of the substrate of the light-emitting diode of each of the protective structures of the present invention Hole structure. _, in the through hole structure. j into the colloid layer, so that the colloid layer is poured into the other side of the substrate and then condensed and embedded on the substrate. Moreover, the stress intensity of the concave-convex surface of the through-hole structure can be formed on the inner wall of the through-hole structure. According to the above-mentioned light-emitting diode with a protective structure according to the present invention, by providing a concave frame structure or a convex frame structure to block water vapor, preventing water vapor from causing electrode structure and solder joints in the light-emitting diode package Variations are made, or the colloidal layer of the package is prevented from being peeled off from the substrate to maintain a better operational efficiency of the LED. Moreover, the through-hole structure enables the colloid layer to be firmly attached to the substrate to have a more LED package effect. In order to give your reviewers a better understanding and understanding of the technical features of the present invention and the efficacies achieved, the following examples are provided to provide a preferred embodiment and phase 200910635 for the purpose of assistance. As after. [Embodiment] In order to make the above objects, features, and advantages of the present invention more comprehensible, the following description of a light-emitting diode having a protective structure according to the present invention is preferably implemented in conjunction with the accompanying drawings. The detailed description is as follows, in which the same elements will be described with the same element symbols. Luminescence: pole ==; two, the first, the diagram is a description of the protective structure of the present invention, the present invention and (4) Γ solution and cross-sectional schematic. As shown in the figure, the light-emitting body of the wafer 12 and the -A plate body 2 includes a light-emitting diode 21 and a colloid layer 22. 2i upper ^ 2 first concave frame structure 23, the concave frame structure 23 is set in the shape of a substrate, and in a single layer _ 22 ^ 23 is a closed view of a single photo frame while the material of the TM is the second === on the substrate 21 On the first surface (1), the light-emitting diode crystal is connected; i 12 ^ is a concave frame structure 23, and is connected by a wire 24 to 25 to drive the light-emitting surface not shown) and the electrode pad layer 22 is frosted & _ into the concave frame structure 23 Ϊ and: the wafer 12 'this colloidal layer 22 is more filled with 0 ^ and covered on the electrode pad 25; 200910635 gas intrusion to the path of the illuminating person's invasion to achieve the surface of the water-resistant wafer 12 The electrode (Fig.::, the material 'such as · the light-emitting diode 2 illuminating === the fifth figure' is the protection structure of the invention, the protection of the invention is shown in the figure 12, the substrate 31 and - side 32 body 3 package wide light emitting diode - and 9 ^ a convex sandal structure 33 ' this convex frame structure 33 is set on the US plate 31 and the second time, the material of the substrate 31 is generally The high-heat-conducting material has a formed electrode assembly 34' and the light-emitting diode wafer 12 is disposed on the substrate 3 ::=:::r_frame structure 33, t-34 to drive the light-emitting diode=5^( ;_未显不) Electrode padding: ==::=12 A package of gas intrusion ===== 200910635 Surface electrode of body wafer 12 (not shown), wire 24 and solder joints (wire 24 and electrode pad 34 or light-emitting diode The junction of the surface electrodes of the wafer 12 is mutated; or the colloidal layer 32 is prevented from being peeled off. The material of the colloid layer 32 generally comprises silicone or epoxy resin. The sixth and seventh figures are taken together to protect the structure of the present invention. The appearance and the cross-sectional view of the third embodiment of the light-emitting diode. As shown, the light-emitting diode 4 of the protective structure of the present invention comprises a light-emitting diode chip 12, a substrate 41 and a colloid layer. 42. The substrate 41 has a concave frame structure 23 and a through hole structure 43, the concave frame structure 23 and the through hole structure 43 are disposed on one of the first surfaces 211 of the substrate 41, and the concave frame structure 23 is closed by a single layer concave frame. The through hole structure 43 is disposed on the periphery of the concave frame structure 23. The inner wall of the through hole structure 33 is further formed as a concave-convex surface 431', and the electrode pad 44 is formed on the first surface 211 of the periphery of the single-layer concave frame. The material of the substrate 41 is generally made of a high thermal conductive material; The diode chip 12 is disposed on the first surface 211 of the substrate 41. The light-emitting diode W12 is a concave frame structure 23, and the light-emitting diode is connected by a wire. The surface electrode of the 丨2 is not shown. And the electrode to drive the LED chip 12 to emit light; 12' the colloid layer 42 is further filled; the colloid layer 42 covers the LED chip into the concave frame structure 23 and covers the electrode pad 44 to The water is blocked, for example, the light-emitting diode is used to extend the moisture intrusion by the concave frame structure 23 to invade the metal material in the structure of the light-emitting diode 4 200910635 44, the wire 24 12 surface electrode body piece 12 The surface electrode (not shown), the electrode 塾 and the solder joint (where the wire 24 is connected to the electrode 塾 44 or the LED chip) is mutated; at the same time, the colloid layer 42 is filled in the via structure 4 = The concave-convex surface 431 is stuck, and is condensed on the substrate 41. ???: 4: 丄4:::42 is firmly adhered to the substrate 41. Please refer to the first and ninth, respectively, for the appearance and cross-sectional view of the fourth embodiment of the light-emitting diode of the present invention. The light-emitting diode 5 having the protective structure of the present invention comprises a light-emitting diode wafer 12, a substrate 51 and a colloid layer 52. The substrate 51 has a convex frame structure 33 and a through-hole structure 53. The convex frame structure 33 and the through-hole structure 53 are disposed on one of the first surfaces 211' of the substrate 51, and the convex frame structure 33 is a closed pattern of a single-layer convex frame. The through hole structure 53 is disposed at the periphery of the convex frame structure 33. The inner wall of the through hole structure 53 is further formed as a concave-convex surface 531, and the electrode pad 54 is formed on the first surface 211 of the periphery of the single-layer convex frame, and at the same time, the substrate 51 The material is generally made of a highly thermally conductive material. The LED chip 12 is disposed on the first surface 211 of the substrate 51. The periphery of the LED wafer 12 is a convex frame structure 33' and is connected to the LED by a wire 24. The surface electrode (not shown) of the body wafer 12 and the electrode pad 54 are used to drive the LED chip 12 to emit light; 13 200910635 The colloid layer 52 covers the LED chip (1) and the convex frame structure 33 and the electrode are covered The matte layer 52 also includes the convex frame structure 33 to extend the moisture intrusion gas to invade the metal in the structure of the light-emitting diode 5 to the surface electrode of the water-blocking wafer 12 (not shown) : Light-emitting diodes and solder joints (wire 24 The electrode pad 54 or the junction of the light-emitting diodes and the wires 24 is mutated; aa 12 surface electrodes are simultaneously filled in the through-hole structure 53 by the colloid layer 52, and the concave-convex surface 531 of the 53 is embedded in the card, and is condensed on the substrate. On the other side of the 211, the colloid layer 53 is firmly adhered to the upper surface layer 52 of the substrate 51 to be detached, and the colloid layer is prevented from being maintained to maintain the luminous efficacy of the light-emitting diode 5. Materials generally include cut or epoxy. For the layer 52, please refer to the tenth W, which is a perspective view of the fifth substrate and the light-emitting diode wafer with the protective crest illumination of the present invention. As shown in the figure, the light-emitting diode 6 having the protective structure of the present invention is not filled with a colloid layer, and includes a substrate 61, a light-emitting diode wafer 12, and an electrode structure 64. The substrate 61 has a concave frame structure 62, a convex frame structure 63 and an electrode structure 64. The concave frame structure 62, the convex frame structure 63 and the electrode structure 64 are disposed on the substrate surface 211. The concave frame structure 62 is a single-layer concave frame. The closed pattern, the convex frame structure 63, the single-layer convex frame sealing _-shaped electrode structure 64 is formed on the first surface 211 in the concave frame structure 62 to form an electrode 641 'the convex-frame structure 63 outside the first surface 211 forming an electrode塾643, and the concave frame structure 62 and the convex frame structure 14 200910635, the electrode pad 2 is formed on the surface of the portion, and the electrode 塾b41 '643 is connected by the electrical rotation (10); the first light-emitting body wafer 12 is disposed on the substrate 61 On a surface 211, the photo-anode wafer 12 straddles the electrode 641, and the periphery of the electrode 641 is a concave structure 62. At the same time, the periphery of the concave structure 62 has a convex structure DO I - an electrode The connections of the 塾641, 642, and 643 to each other form an electrode structure 64 that drives the connection to the diode wafer 12. The material of the substrate 61 is generally made of a material that is made of heat in the south. The light-emitting diode 6 having the protective structure of the fifth embodiment is designed to be filled with the colloid layer by the structure of the concave frame, the convex frame and the electrode, so as to prevent moisture from invading and destroying the light-emitting diode 6 The metal material in the structure, such as the surface electrode of the light-emitting diode wafer 12 (not shown), the electrode pads 641, 642'643, and the solder joint (the junction of the electrode pad 641 and the surface electrode of the light-emitting diode wafer 12) Producing variations; or avoiding peeling off the colloidal layer and solving the shortcomings of the conventional light-emitting polar structure. Please refer to the second drawing, which is a perspective view of a substrate and a light emitting diode chip of a sixth embodiment of a light-emitting diode with a protective structure according to the present invention. As shown in the figure, the light-emitting diode 7 having the protective structure of the present invention is not filled with a colloid layer, which comprises a substrate 71, a light-emitting diode wafer 12, and an electrode structure 72. The substrate 71 has a concave frame structure 23 and an electrode structure 72. The concave structure 23 and the electrode structure 72 are disposed on one of the first surfaces 21i of the substrate 71, and the concave pivot 15 200910635 = 3 is a single-layer concave frame sealing. The electrode structure 72 is formed on the first surface 211 of the 魄 structure to form the electrode pad 721, the first surface outside the concave frame structure 23 forms the electrode pad 722, and the wire 723 is connected to the electrode 721 across the concave frame structure 23, The light-emitting diode chip 12 is disposed on the first surface 211 of the substrate 71, the light-emitting diode wafer 12 is spanned over the electrode pad 721, and the periphery of the electrode pad 721 is a concave frame structure 23; The art 72b and the wire 723 form an electrode structure 72 for driving the light emitting diode chip 12 to emit light. The material of the substrate 71 is generally made of a material having a high conductivity.遂 构成 构成 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光 发光The metal material inside, such as the surface electrode of the LED chip 12 (not shown), the electrode κι, 722, the wire 723 and the solder joint (electrode pad 721 and the surface electrode or wire of the LED chip 12) The junction of 723) produces variations; or avoids peeling off the colloidal layer and addresses the shortcomings of conventional light-emitting diode structures. Referring to the twelfth and thirteenth drawings, a perspective view and a cross-sectional view of a substrate and a light-emitting diode wafer according to a seventh embodiment of the light-emitting diode of the present invention. As shown in the figure, the light-emitting diode 8 having the protective structure of the present invention is not filled with a colloid layer, and includes a substrate 81, a light-emitting diode wafer a, and an electrode structure 82. The substrate 81 has a concave frame structure 23 and an electrode structure 82. The concave frame structure 23 and the pole structure 82 are disposed on one of the first surfaces of the substrate 81, 2, and the concave frame 23 is a single-layer concave frame. The electrode surface 821 is formed on the first surface 211 of the concave structure, and the electrode pad 822 is formed on the surface of the partial inner side 231 of the concave frame structure 23, and the third surface 211 outside the concave frame structure 23 is formed. The electrode pad 823 'electrode pad 823 is connected to the electrode pad 82 822 ; the light emitting diode chip 12 is disposed on the first surface 2 丨 1 of the substrate 81 , the light emitting diode chip 12 is spanned over the electrode pad 821 , and the electrode The periphery of the pad 821 is a concave frame structure 23; the electrode structure 82 for driving the light emitting diode chip 12 to emit light is formed by the connection of the electrode pads 82 and 823, and the substrate 81 is made of a highly thermally conductive material.发光 'Light-emitting diode 8 constituting the protective structure of the seventh embodiment. The structure of the concave frame and the electrode is designed to fill the colloid layer, and the metal material in the structure of the light-emitting diode 8 can be prevented. For example, the surface electrode of the light-emitting two-body wafer 12 (not shown), the electrode for the 82ι, & and the solder joint (the electrical impurity 82i and the surface electrode of the light-emitting diode wafer 12 are mutated; or to avoid peeling off the colloid layer, And the conventional solution = see the fourteenth figure, which is a plan view of the concave frame structure and the electrode structure of the eighth embodiment of the light-emitting structure with the protective structure of the present invention. _9 has not yet won the body layer, 200910635, which comprises a substrate 91, a light-emitting diode chip 12 and an electrode structure. The substrate 91 has a concave frame structure 93 and an electrode structure 82, and the concave frame structure 93 and the electrode structure The first surface 211 of the substrate 91 is disposed on the first surface 211 of the substrate 91. The concave frame structure 93 is a non-closed pattern of a single-layer concave frame having a channel 931. The electrode structure 92 is formed on the first surface 211 of the concave frame structure 93 to form an electrode pad 921. And via the concave frame structure 93 The channel 931 is formed on the electrode pad 922, and the light-emitting diode chip 12 is disposed on the first surface 211 of the substrate 91. The light-emitting diode chip 12 is disposed on the electrode pad 921. The electrode pad 921 is surrounded by a concave frame structure 93. The electrode structure 92 for driving the light emitting diode chip 12 to emit light is formed by the connection of the electrode pads 921 and 922. The material of the substrate 91 generally comprises a high thermal conductive material.遂, the light-emitting diode 9 having the protective structure of the eighth embodiment is configured, and the structure of the concave frame and the electrode is designed to fill the colloid layer, thereby preventing the moisture intrusion and destroying the structure of the light-emitting diode 9 The metal material inside, such as: the surface electrode of the LED chip 12 (not shown), the electrode pad and the point (the junction of the electrode pad 921 and the surface electrode of the LED chip 12) mutate; Or avoiding the miscellaneous layer _, and solving the shortcomings of the conventional structure. Please refer to the fifteenth figure, which is a top view of the concave frame structure and the electrode structure of the ninth embodiment of the illuminating structure 2 of the present invention. As shown in the figure = 200910635 The light-emitting diode A having the protective structure of the present invention has not been filled with a colloid layer, and includes a substrate A1, a light-emitting diode wafer 12, and an electrode structure A2. The substrate A1 has a concave frame structure A3 and an electrode structure. A2, the concave frame structure A3 and the electrode structure A2 are disposed on one of the first surfaces 211 of the substrate A1, the concave frame structure A3 is a multi-layer concave frame, and has a non-closed pattern of the channel A31, and the electrode structure A2 is attached to the concave frame structure A3. The first surface 211 of the inner surface forms an electrode pad A21, and the electrode pad A22 is formed through the channel A31 of the concave frame structure A3, and the through hole A31 extends outside the concave frame structure A3. The light emitting diode chip 12 is disposed on the first surface of the substrate A1. 2, the light-emitting diode wafer 12 is spanned over the electrode pad A21, and the periphery of the electrode pad A2i is a concave frame structure A3; the driving light-emitting diodes are formed by the connection of the electrical electrodes A21 and A22. . The substrate ΜH is surrounded by a high-conductivity 4遂, which constitutes the ninth real gamma structure H pole body A. The structure of the concave frame and the electrode is designed to fill the _ layer, and the dm diode can be blocked. The metal material in the A structure, such as the surface electrode of the light-emitting diode plate 12 (not shown), the electrode A21, the solder joint (the electrode pad A21 and the surface electrode of the light-emitting diode wafer 12) Pointing or avoiding peeling off the colloidal layer, and solving the conventional light emitting diode junction embodiment of the above tenth to fifteenth figures, may be used for the closed frame and the 200910635 structure or may be a concave frame that does not close the graphic And the convex frame structure is the same as the concave frame with the closed pattern and the unclosed pattern or ': the mesh can also have no through hole structure' and the inner wall of the through hole structure also has a concave-convex surface to increase the adhesion of the colloid layer The above is only an exemplification and is not a limitation. According to the person skilled in the art, according to the technique of the present disclosure, Equivalent modifications or changes made shall be included in the scope of the attached patent application. BRIEF DESCRIPTION OF THE DRAWINGS The first figure is a typical high-resolution light-emitting diode structure cross-sectional view of the prior art; the second figure is an exploded view of the first embodiment of the light-emitting diode with the protective structure of the present invention. The third embodiment is a schematic cross-sectional view of a first embodiment of a light-emitting diode having a protective structure according to the present invention; and a fourth is a schematic exploded view of a second embodiment of the light-emitting diode having the protective structure of the present invention; 5 is a schematic cross-sectional view showing a second embodiment of a light-emitting diode having a protective structure according to the present invention; 苐/, a schematic exploded view of a third embodiment of the light-emitting diode having the protective structure of the present invention; 7 is a schematic cross-sectional view showing a third embodiment of the light-emitting diode of the present invention having a protective structure; and FIG. 8 is an exploded perspective view showing a fourth embodiment of the light-emitting diode having the protective structure of the present invention; Figure 9 is a cross-sectional view showing a fourth embodiment of the light-emitting diode of the present invention having a protective structure; and the tenth embodiment is a fifth embodiment of the light-emitting diode having the protective structure of the present invention. FIG. 11 is a perspective view of a substrate and a light-emitting diode wafer of a sixth embodiment of the light-emitting diode of the present invention; 2 is a perspective view of a substrate and a light-emitting diode wafer of a seventh embodiment of the light-emitting diode of the present invention; FIG. 13 is a seventh embodiment of the light-emitting diode of the present invention having a protective structure FIG. 14 is a schematic cross-sectional view showing a concave frame structure and an electrode structure of an eighth embodiment of a light-emitting diode having a protective structure according to the present invention; and a fifteenth embodiment; The plan view of the concave frame structure and the electrode structure of the ninth embodiment of the light-emitting diode having the protective structure of the present invention is not intended. 21 200910635 [Description of main components] I: light-emitting diode structure; II: substrate; III: wire; 12: light-emitting diode wafer; 13: colloid layer; 14: water gas; 15: electrode pad; 2: light-emitting diode with protective structure; 21: substrate; 211: first surface; colloid 23: concave frame structure; 231: inner side; 24: wire; 25: electrode pad; 3: light-emitting diode with protective structure; 31: substrate; 32: colloid layer; 33: convex frame structure; 22 200910635 34: Electrode pad; 4: Light-emitting diode with protective structure; 41: substrate; 42: colloid layer; 43: through-hole structure; 431: concave-convex surface; 44: electrode pad; 5: light-emitting diode with protective structure; 51: substrate; 52: colloid layer; 53: convex frame structure; 531: concave and convex surface; 54: electrode pad; 6: light-emitting diode with protective structure; 61. substrate, 62: concave frame structure; 63: convex frame Structure, 64: electrode structure; 641: electrode pad; 642: electrode pad; 23 200910635 643: electrode pad; 7: light-emitting diode with protective structure; 71: substrate; 72: electrode structure; 721: electrode pad; : electrode pad; 723: wire; 8: light-emitting diode with protective structure; 81: substrate; 82. electrode structure, 821: electrode pad; 822: electrode pad; 823: electrode pad; Diode; 91: substrate; 92. electrode structure, 921: electrode pad; 922: electrode pad; 93: concave frame Structure; 931: passage; 24 200910635 A: light emitting diode having the protective structure; A1: a substrate; A2: an electrode structure; A21: electrode pad; the A22: electrode pad; A3: concave frame structure; and A31: channel. 25