TW200909403A - Compounds and process for producing the same - Google Patents

Compounds and process for producing the same Download PDF

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TW200909403A
TW200909403A TW097127625A TW97127625A TW200909403A TW 200909403 A TW200909403 A TW 200909403A TW 097127625 A TW097127625 A TW 097127625A TW 97127625 A TW97127625 A TW 97127625A TW 200909403 A TW200909403 A TW 200909403A
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substituted
unsubstituted
compound represented
formula
compound
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TW097127625A
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Chinese (zh)
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Ken Maruyama
Daisuke Shimizu
Yukio Nishimura
Toshiyuki Kai
Tsutomu Shimokawa
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Jsr Corp
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    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C37/00Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring
    • C07C37/11Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by reactions increasing the number of carbon atoms
    • C07C37/20Preparation of compounds having hydroxy or O-metal groups bound to a carbon atom of a six-membered aromatic ring by reactions increasing the number of carbon atoms using aldehydes or ketones
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C35/00Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring
    • C07C35/22Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system
    • C07C35/44Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a ring other than a six-membered aromatic ring polycyclic, at least one hydroxy group bound to a condensed ring system with a hydroxy group on a condensed ring system having more than three rings
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C39/00Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring
    • C07C39/12Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings
    • C07C39/17Compounds having at least one hydroxy or O-metal group bound to a carbon atom of a six-membered aromatic ring polycyclic with no unsaturation outside the aromatic rings containing other rings in addition to the six-membered aromatic rings, e.g. cyclohexylphenol
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/04Condensation polymers of aldehydes or ketones with phenols only
    • C08L61/06Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • C08L61/12Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols with polyhydric phenols
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • CCHEMISTRY; METALLURGY
    • C07ORGANIC CHEMISTRY
    • C07CACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00Systems containing at least three condensed rings
    • C07C2603/92Systems containing at least three condensed rings with a condensed ring system consisting of at least two mutually uncondensed aromatic ring systems, linked by an annular structure formed by carbon chains on non-adjacent positions of the aromatic system, e.g. cyclophanes

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Materials For Photolithography (AREA)

Abstract

Disclosed is a compound as a material for a radiation-sensitive composition having excellent coatability which is capable of forming a resist film which enables to stably form a fine pattern with high precision. Specifically disclosed is a compound which is obtained by subjecting a compound represented by the general formula (1) below and a compound represented by the general formula (2) below to a condensation reaction, and then to hydrogenation.

Description

200909403 九、發明說明 【發明所屬之技術領域】 本發明係關於一種新穎化合物及其製造方法,更詳言 之’係關於可形成使用KrF準分子雷射或ArF準分子雷射 等遠紫外線等之輻射線的細微加工中有用之化學增幅型光 阻劑之敏輻射線性樹脂組成物中包含之新穎化合物及其製 造方法。 【先前技術】 積體電路元件等半導體之製造中日益要求獲得更高之 積體度。最近,因應可進行lOOnm以下之細微加工之微影 蝕刻技術之需求而開發出例如 ArF準分子雷射(波長 193nm) 、F2準分子雷射(波長i57nm)、同步加速器輻 射線等X射線、電子束等輻射線之微影蝕刻技術。 因此’已提案有多種適用於上述準分子雷射等輻射線 照射之敏輻射線性樹脂組成物,該敏輻射線性樹脂組成物 已知有例如具有酸解離性官能基之成份與藉由輻射線照射 產生酸之成份之酸產生劑而藉此利用化學增幅效果之化學 增幅性敏輻射線性樹脂組成物等。 具體而言,已提案有含有杯芳烴(calixarene)或富 勒烯(fullerene )等之具有薄膜形成能之有機低分子之光 阻劑組成物(例如’參照專利文獻丨~8 )、含有多價酚化 合物之光阻劑組成物(例如,參照專利文獻9~ 1 1 )等。另 外’亦提案有包含杯芳烴、富勒烯以外之具有薄膜形成能 -5- 200909403 之有機低分子(1,3,5 -叁〔4- ( 2 -第三丁氧基羰基氧基) 苯基〕苯)之光阻劑組成物(例如,參照非專利文獻1 ) 〇 〔專利文獻1〕特開平11-322656號公報 〔專利文獻2〕特開平1 1 - 7 2 9 1 6號公報 〔專利文獻3〕特開平9 - 2 3 6 9 1 9號公報 〔專利文獻4〕特開平7-134413號公報 〔專利文獻5〕特開平9-211862號公報 〔專利文獻6〕特開平1〇_282649號公報 〔專利文獻7〕特開平11-143074號公報 〔專利文獻8〕特開平11-258796號公報 〔專利文獻9〕特開2006-267996號公報 〔專利文獻10〕特開2006-235340號公報 〔專利文獻1 1〕特開2 0 0 7 - 5 5 9 9 1號公報 〔非專利文獻 1〕J. Photo Sci and Tech VOL12 No2 375-376 ( 1999) 【發明內容】 然而,專利文獻2、3中所記載之光阻劑組成物由於 其結構之分子間相互作用極強,對於顯像液之溶解性不良 ,因而會有無法獲得滿意圖案之問題。另外,專利文獻 4〜8及專利文獻1中所記載之光阻劑組成物由於其製法中 需要多階段合成,因而會有無法充分量產、生產效率不良 ,無法提供穩定品質之問題。再者,專利文獻9~1 1中所 -6- 200909403 記載之光阻劑組成物由於感度不足’因此有尙未到達 程度之問題。 因此,專利文獻2〜1 1及非專利文獻1中所記載 阻劑組成物,除了具有上述各種問題點以外,且由於 長1 9 3 nm之吸收大,因而形成光阻劑膜後,於曝光之 若使用ArF準分子雷射,則有該ArF準分子雷射無法 照射到光阻劑膜內部之情況。因此,於光阻劑膜上形 光阻劑圖案之線邊緣粗糙度(Line Edge Roughness ( ))(由上面觀看光阻劑之線(Line )圖案時光阻劑 側面凹凸)大的問題。又,有對於基板之塗佈性(塗 )不足之問題。 另外,專利文獻1中記載之光阻劑組成物雖可形 刻抗性優異之光阻劑膜,但由於在波長1 93nrn之吸收 形成光阻劑膜之後,曝光之際,若使用ArF準分子雷 則有該ArF準分子雷射無法充分照射到光阻劑膜內部 況。因此,導致光阻劑膜中形成之光阻劑圖案之線邊 糙度大。 本發明係鑑於上述問題而完成者,而提供一種化 及其製造方法,該化合物爲敏輻射線性樹脂組成物之 ,該樹脂組成物於使用ArF準分子雷射作爲曝光光源 影蝕刻技術中,由於對ArF準分子雷射之透過性優異 可降低光阻劑圖案之線邊緣粗糙度,除可形成高精度 定之細微圖案之光阻劑膜以外,塗佈性亦優異。 本發明者爲達成上述課題而積極探討之結果,發 實用 之光 在波 際, 充分 成之 LER 之線 覆性 成蝕 大, 射, 之情 緣粗 合物 材料 之微 ,故 且安 現藉 -7- 200909403 由使以下列通式(1 )表示之化合物及以下列通式(2)表 示之化合物經縮合反應,且使源自以上述通式(1 )表示 之化合物中之苯環不飽和鍵經氫化而獲得之化合物,可達 成上述課題,因而完成本發明。 亦即,依據本發明,係提供一種以下所示之化合物及 其製造方法。 〔1〕一種化合物’係使以下列通式(1 )表示之化合 物及以下列通式(2 )表示之化合物經縮合反應,且使源 自以上述通式(1)表示之化合物中之苯環不飽和鍵經氫 化獲得者:200909403 IX. Description of the Invention [Technical Field] The present invention relates to a novel compound and a method for producing the same, and more particularly to the formation of a far ultraviolet ray such as a KFF excimer laser or an ArF excimer laser. A novel compound contained in a sensitive radiation linear resin composition of a chemically amplified photoresist useful for fine processing of radiation, and a method for producing the same. [Prior Art] In the manufacture of semiconductors such as integrated circuit components, it is increasingly required to obtain a higher degree of integration. Recently, X-rays and electrons such as ArF excimer laser (wavelength 193 nm), F2 excimer laser (wavelength i57 nm), synchrotron radiation, etc. have been developed in response to the demand for microlithography etching technology capable of fine processing of 100 nm or less. A lithography technique for beam and other radiation. Therefore, various sensitive radiation linear resin compositions suitable for radiation irradiation such as excimer lasers have been proposed, and the sensitive radiation linear resin composition is known to have, for example, an element having an acid dissociable functional group and being irradiated by radiation. An acid generator which generates an acid component, thereby utilizing a chemical amplification effect of a chemical amplification radiation linear resin composition or the like. Specifically, a photoresist composition having an organic low molecular weight having a film forming ability such as calixarene or fullerene has been proposed (for example, 'refer to Patent Document 丨~8), and contains a multivalent value. A photoresist composition of a phenol compound (for example, refer to Patent Documents 9 to 1 1). In addition, an organic low molecular (1,3,5-[4-(2-tert-butoxycarbonyloxy))benzene having a film forming energy of -5 to 200909403 other than calixarene and fullerene is also proposed. (1) Patent Document 1 (Japanese Patent Laid-Open Publication No. Hei 11-322656) (Patent Document 2) Japanese Patent Publication No. Hei No. Hei 1 - 7 2 9 1 6 Japanese Laid-Open Patent Publication No. Hei 9-211862 (Patent Document 5) Japanese Patent Publication No. Hei 9-211862 (Patent Document 6) Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. [Patent Document 1 1] Japanese Patent Publication No. 2 0 0 7 - 5 5 9 9 1 (Non-Patent Document 1) J. Photo Sci and Tech VOL12 No 2 375-376 (1999) [Draft] However, Patent Document 2 The photoresist composition described in 3, because of the extremely strong intermolecular interaction of its structure, for the imaging liquid Solvability bad, so there will not be a problem to get the satisfaction pattern. In addition, since the photoresist composition described in Patent Documents 4 to 8 and Patent Document 1 requires multi-stage synthesis in the production method, there is a problem that the mass production cannot be sufficiently performed, the production efficiency is poor, and stable quality cannot be provided. Further, the photoresist composition described in the above-mentioned Japanese Patent Publication No. 6-1-200909403 has a problem that the sensitivity is insufficient because of the lack of sensitivity. Therefore, in the resist compositions described in Patent Documents 2 to 11 and Non-Patent Document 1, in addition to the various problems described above, since the absorption of the length of 193 nm is large, the photoresist film is formed and exposed. If an ArF excimer laser is used, there is a case where the ArF excimer laser cannot be irradiated inside the photoresist film. Therefore, there is a problem that the line edge roughness (R) of the photoresist pattern on the photoresist film is large (the unevenness of the side surface of the photoresist when the line pattern of the photoresist is viewed from above). Further, there is a problem that the coating property (coating) of the substrate is insufficient. Further, although the photoresist composition described in Patent Document 1 can form a photoresist film excellent in resistance, since an ArF excimer is used after exposure to form a photoresist film at a wavelength of 1 93 nrn. Lei has the ArF excimer laser that cannot fully illuminate the interior of the photoresist film. Therefore, the line edge roughness of the photoresist pattern formed in the photoresist film is large. The present invention has been made in view of the above problems, and provides a chemical composition of a linear radiation resin composition using an ArF excimer laser as an exposure light source etching technique, The excellent permeability to the ArF excimer laser can reduce the line edge roughness of the photoresist pattern, and the coating property is excellent in addition to the photoresist film which can form a fine pattern with high precision. The inventors of the present invention actively explored the results of the above-mentioned problems, and the light of practical use is in the inter-wave, and the LER's line is fully etched into a large eclipse, and the ruthlessness of the rough material is so small that it is 7-200909403 A compound represented by the following formula (1) and a compound represented by the following formula (2) are subjected to a condensation reaction, and the benzene ring derived from the compound represented by the above formula (1) is unsaturated. The compound obtained by hydrogenation of a bond can achieve the above problems, and thus the present invention has been completed. That is, according to the present invention, a compound shown below and a method for producing the same are provided. [1] A compound ' is a condensation reaction of a compound represented by the following formula (1) and a compound represented by the following formula (2), and is derived from a benzene derived from the compound represented by the above formula (1) The ring unsaturated bond is hydrogenated to obtain:

(上述通式 1 )中,X1表示碳數1(in the above formula 1), X1 represents a carbon number of 1

氧基、 基、或經取代或未經取代之苯氧基 1 0之經取代或未經取Substituted or unsubstituted oxy, yl, or substituted or unsubstituted phenoxy 1 0

代之炔基、碳數7〜1〇 央基、碳數7〜1〇之經取代或 1 0之經取代或未經取代之烷 本氧基’P表示〇或1),Substituted alkynyl, carbon number 7 to 1 oxime, substituted by carbon number 7 to 1 oxime or substituted or unsubstituted alkyl of 10, ethoxy group 'P represents 〇 or 1),

〇Hc —X2 一 CHO 200909403 (上述通式(2 )中,X2表示碳數1~8之經取代成 术經取 代之伸烷基)。 〔2〕如上述〔1〕所述之化合物,其中使以上¾^甬1 (1)表示之化合物及以上述通式(2)表示之化& 冗《物經縮 合反應獲得之縮合反應產物爲以下列通式(3 )秀~ & )我不之化 合物、以下列通式(4 )表示之化合物或以下列通@ ( > 表示之化合物:〇Hc - X2 - CHO 200909403 (In the above formula (2), X2 represents a carbon number of 1 to 8 substituted with a substituted alkyl group). [2] The compound according to the above [1], wherein the compound represented by the above 3⁄4^1 (1) and the condensation reaction product obtained by the condensation reaction represented by the above formula (2) It is a compound represented by the following formula (3) and a compound represented by the following formula (4) or a compound represented by the following @ ( >:

^通式(3)巾’ΧΙ彼此獨立表示碳數1〜10之經取代 -未經取代之烷基、碳數2〜i 〇之經取代或未經取代之烯 基、碳數2〜1()之經取代或未經取代之炔基、碳數7 10 經取代之芳院基、碳…之經取代或未經 ==基、或經取代或未經取代之苯氧基’χ2彼此獨 立表示。或u,代或未經取代之伸院基,Μ皮此獨 -9- 200909403^ The formula (3) towel 'ΧΙ independently of each other means a substituted or unsubstituted alkyl group having a carbon number of 1 to 10, a substituted or unsubstituted alkenyl group having a carbon number of 2 to i, a carbon number of 2 to 1. () substituted or unsubstituted alkynyl group, carbon number 7 10 substituted aromatic group, carbon ... substituted or not == group, or substituted or unsubstituted phenoxy 'χ2 each other Independently stated. Or u, generation or unsubstituted extension of the base, suede this alone -9- 200909403

(上述通式(4)中,X1彼此獨立表示碳數1〜10之經取代 或未經取代之烷基、碳數2〜1 0之經取代或未經取代之烯 基、碳數2〜1 0之經取代或未經取代之炔基、碳數1 0之 經取代或未經取代之芳烷基、碳數1 ~ 1 〇之經取代或未經 取代之烷氧基、或經取代或未經取代之苯氧基,X2彼此獨 立表示碳數1〜8之經取代或未經取代之伸烷基,p彼此獨 立表示〇或1 ), -10- 200909403 〔化5〕(In the above formula (4), X1 independently represents a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 10 carbon atoms, and a carbon number of 2~ a substituted or unsubstituted alkynyl group of 10, a substituted or unsubstituted aralkyl group having a carbon number of 10, a substituted or unsubstituted alkoxy group having a carbon number of 1 to 1 fluorene, or substituted Or an unsubstituted phenoxy group, X2 independently of each other represents a substituted or unsubstituted alkylene group having 1 to 8 carbon atoms, and p independently of each other represents hydrazine or 1), -10-200909403 [Chemical 5]

(上述通式⑴巾’ X、此獨立表示碳數 或未經取代:> 严其站机 U之,键取代 某、 碳_ 2〜1〇之經取代或未經取代之嫌 基 fe數2〜1 〇之經取代输± 代或未經取代之炔基、碳數7〜10之 I取代或未經取代之芳 取什… 基、碳數1〜1〇之經取代或未經 亡 ^氧基、或經取代或未經取代之苯氧基,P彼此獨 U袠示0或l,n表示0以上之整數)。 〔3〕如上述〔2〕所述之化合物,其中以上述通式( 3)表示之化合物、以上述通式(4)表示之化合物或以上 &通式(5)表示之化合物分別爲以下式(6)表示之化合 物 、 、以式(7)表示之化合物或以式(8)表示之化合物: -11 - 200909403 〔化6〕(The above formula (1) towel 'X, this independently represents carbon number or unsubstituted:> Yanqi station machine U, the key replaces a certain, carbon _ 2~1 〇 substituted or unsubstituted stimulant fe number 2~1 取代 经 输 ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± ± An oxy group, or a substituted or unsubstituted phenoxy group, P each independently exhibits 0 or 1, and n represents an integer of 0 or more. [3] The compound according to the above [2], wherein the compound represented by the above formula (3), the compound represented by the above formula (4) or the compound represented by the above formula (5) are each the following a compound represented by the formula (6), a compound represented by the formula (7) or a compound represented by the formula (8): -11 - 200909403 [Chemical 6]

〔化7〕[7]

〔化8〕〔化8〕

-12- 200909403 (上述通式(8)中,η表示0以上之整數)。 〔4〕如上述〔1〕〜〔3〕中任一項之化合物,其中經 氫化之上述不飽和鍵之比例相對於上述縮合反應產物中所 含全部苯環之全部不飽和鍵爲30〜1〇〇%。 〔5〕一種化合物之製造方法’該方法係使以下列通 式(1 )表示之化合物及以下列通式(2 )表示之化合物經 縮合反應’且使源自以上述通式(〇表示之化合物中之 苯環不飽和鍵經氫化而獲得該化合物: 〔化9〕-12- 200909403 (in the above formula (8), η represents an integer of 0 or more). [4] The compound according to any one of the above [1] to [3] wherein the ratio of the unsaturated bond to be hydrogenated is 30 to 1 with respect to all the unsaturated bonds of all the benzene rings contained in the condensation reaction product. 〇〇%. [5] A method for producing a compound which is obtained by subjecting a compound represented by the following formula (1) and a compound represented by the following formula (2) to a condensation reaction and is derived from the above formula (〇 The benzene ring unsaturated bond in the compound is hydrogenated to obtain the compound: [Chemical 9]

〇之經取代或未經取Substituted or not taken

〜W取代或未經取代之烷 代之苯氧基,p表示〇或丨), 之烷 (上述通式(1)中,X1表示碳數b 代之烷基、碳數2~1() 2〜10之經取代或未經取 未經取代之芳烷基、_ 氧基、或經取代或未經取代之苯氧基 化10~W substituted or unsubstituted alkyl phenoxy group, p represents hydrazine or hydrazine), alkane (in the above formula (1), X1 represents a carbon number b alkyl group, carbon number 2 to 1 () 2 to 10 substituted or unsubstituted aralkyl, oxy, or substituted or unsubstituted phenoxylated 10

X2 —CHO (上述通式(2 )中, 代之伸烷基)。 X表示碳數1X2 - CHO (in the above formula (2), an alkyl group is substituted). X represents the carbon number 1

-13- 200909403 〔6〕如上述〔5〕所述之化合物之製造方法,其中使 以上述通式(1)表示之化合物及以上述通式(2)表示之 化合物經縮合反應,且使源自以上述通式(1 )表示之化 合物中之苯環不飽和鍵氫化,獲得以下列通式(9 )表示 之化合物、以下列通式(1 〇 )表示之化合物或以下列通式 (1 1 )表示之化合物: 〔化 1 1〕[6] The method for producing a compound according to the above [5], wherein the compound represented by the above formula (1) and the compound represented by the above formula (2) are subjected to a condensation reaction, and the source is obtained. Hydrogenation of a benzene ring unsaturated bond in the compound represented by the above formula (1) to obtain a compound represented by the following formula (9), a compound represented by the following formula (1 〇) or a formula (1) 1) Compound represented: [Chemical 1 1]

〔化 1 2〕[Chemical 1 2]

(10) -14- 200909403 〔化 1 3〕(10) -14- 200909403 [Chem. 1 3]

(上述通式(11)中之η表示〇以上之整數)。 本發明之化合物爲敏輻射線性樹脂組成物材料,其在 使用ArF準分子雷射作爲曝光光源之微影鈾刻技術中,由 於對ArF準分子雷射之透過性優異,因此降低光阻劑圖案 之線邊緣粗糙度’除可形成高精度且安定之細微圖案之光 阻劑膜以外,且塗佈性亦優異而發揮效果。 本發明化合物之製造方法可達到良好的製造本發明化 合物之效果。 【實施方式】 以下說明本發明實施之最佳形態,但本發明並不限定 於以下實施形態,在不脫離本發明精神之範圍內’熟悉本 技藝者可基於習知知識,對以下實施形態做適當的變更、 改良等,但應了解該等均屬本發明之範圍。 〔1〕化合物: 本發明化合物之一實施形態爲使以下列通式(1 )表 -15- 200909403 示之化合物及以下列通式(2)表示之化合物經縮合反應 ,且使源自以上述通式(1)表示之化合物中之苯環不飽 和鍵氫化而獲得之化合物。藉由使敏輻射線性樹脂組成物 中含有該化合物,使該敏輻射線性樹脂組成物在使用ArF 準分子雷射作爲曝光光源之微影蝕刻技術中,由於對ArF 準分子雷射之透過性優異,因此可降低光阻劑圖案之線邊 緣粗糙度’除可形成高精度且安定之細微圖案之光阻劑膜 以外,亦爲塗佈性優異者。 〔化 1 4〕(η in the above formula (11) represents an integer of 〇 or more). The compound of the present invention is a sensitive radiation linear resin composition material, and in the lithography lithography technique using an ArF excimer laser as an exposure light source, since the permeability to the ArF excimer laser is excellent, the photoresist pattern is lowered. The line edge roughness 'except for the photoresist film which can form a fine pattern with high precision and stability, and the coating property is also excellent and the effect is exhibited. The method for producing the compound of the present invention can attain a good effect of producing the compound of the present invention. The preferred embodiments of the present invention are described below, but the present invention is not limited to the following embodiments, and those skilled in the art can make the following embodiments based on the conventional knowledge without departing from the spirit of the invention. Appropriate changes, improvements, etc., are understood to be within the scope of the invention. [1] Compound: One embodiment of the compound of the present invention is such that the compound represented by the following general formula (1), Table -15 to 200909403, and the compound represented by the following formula (2) are subjected to a condensation reaction, and are derived from the above A compound obtained by hydrogenating a benzene ring unsaturated bond in the compound represented by the formula (1). By including the compound in the sensitive radiation linear resin composition, the sensitive radiation linear resin composition is excellent in permeability to ArF excimer laser in a lithography etching technique using an ArF excimer laser as an exposure light source. Therefore, it is possible to reduce the line edge roughness of the photoresist pattern. In addition to the photoresist film which can form a fine pattern with high precision and stability, it is also excellent in coatability. [Chem. 1 4]

X 表不碳數 (上述通式(2 )中 代之伸烷基)。 之經取代或未經取 -16- 200909403 〔1-1〕縮合反應: 本實施形態之化合物爲首先藉由使以上述通式(1 ) 表示之化合物及以上述通式(2 )表示之化合物經縮合反 應而獲得者。作爲目的之本實施形態之化合物之優點爲可 輕易的藉由使以上述通式(1)表示之化合物及以上述通 式(2)表示之化合物縮合反應而合成。再者,以通式(1 )表示之化合物及以通式(2)表示之化合物分別可單獨 使用或組合複數種使用。 以通式(1)表示之化合物中之X1中之碳數1〜10之 經取代烷基之取代基可舉例爲例如甲基、乙基、伸丙基、 伸丁基等。該等中,本實施形態之化合物就可獲得高收率 之觀點而言以伸丙基、伸丁基爲較佳。 又’碳數2~ 1 0之經取代烯基、碳數2〜1 0之經取代炔 基、碳數7-10之經取代芳烷基、碳數1〜1〇之經取代烷氧 基、及經取代之苯氧基中之取代基可舉例爲與上述碳數 1〜1 〇之烷基之取代基相同者。 以通式(1 )表示之化合物中之p較佳爲0。亦即,以 通式(1 )表示之化合物中,就可以高收率獲得之觀點而 言’本實施形態之化合物較好爲以下式(1 -1 )表示之化 合物:X represents a carbon number (alkyl group in the above formula (2)). Substituted or not taken - 16-200909403 [1-1] Condensation reaction: The compound of the present embodiment is a compound represented by the above formula (1) and a compound represented by the above formula (2) Obtained by condensation reaction. An advantage of the compound of the present embodiment as an object of the invention is that it can be easily synthesized by a condensation reaction of a compound represented by the above formula (1) and a compound represented by the above formula (2). Further, the compound represented by the formula (1) and the compound represented by the formula (2) may be used singly or in combination of plural kinds. The substituent of the substituted alkyl group having 1 to 10 carbon atoms in X1 in the compound represented by the formula (1) can be exemplified by, for example, a methyl group, an ethyl group, a propyl group, a butyl group or the like. Among these, the compound of the present embodiment is preferably a propyl group or a butyl group from the viewpoint of obtaining a high yield. Further, 'substituted alkenyl group having 2 to 10 carbon atoms, substituted alkynyl group having 2 to 10 carbon atoms, substituted aralkyl group having 7 to 10 carbon atoms, substituted alkoxy group having 1 to 1 carbon number The substituent in the substituted phenoxy group may be, for example, the same as the substituent of the above alkyl group having 1 to 1 carbon atom. The p in the compound represented by the formula (1) is preferably 0. In other words, the compound represented by the formula (1) can be obtained in a high yield. The compound of the present embodiment is preferably a compound represented by the following formula (1-1):

200909403 〔化 1 6〕 HO、 (1-1) hct 以通式(2)表示之化合物中之X2中之碳數1, 取代伸烷基之取代基可舉例爲與上述碳數1〜10之 烷基之取代基相同者。以通式(2)表示之化合物[ 爲碳數1〜8之伸烷基之任一種(所得化合物之構造 別不同),所得化合物對本發明之效果並沒有特別 因此,就可以高收率製備之觀點而言,本實施形態 物之X2較好爲碳數2~6之未經取代之伸烷基,最 數3之未經取代之伸烷基。亦即’以通式(2 )表 合物較好爲以下式(2-1)表示之化合物(戊二醛) 〔化 1 7〕 OHC— ( CH2 ) 3 —CH0 (2-1) 又,藉由縮合反應主要所得化合物之構造係由 (2)表示之化合物中之X2之伸垸基碳數決定。具 ,當以通式(2 )表示之化合物中之X2爲伸丙基時 獲得後述以通式(3 )表示之化合物’且以通式(3 之化合物中,主要獲得X2爲伸丙基之化合物。 又,以通式(2 )表示之化合物中之X2爲伸丁 -18- '8之經 經取代 3之X2 亦可分 差異。 之化合 好爲碳 示之化 以通式 體而霄· ,主要 )表示 基時, 200909403 主要獲得後述以通式(4)表示之化合物,且以通式(4) 表示之化合物中,主要亦獲得X2爲伸丁基之化合物。另 外,以通式(2 )表示之化合物中之X2爲伸乙基時,主要 獲得後述以通式(5 )表示之化合物。 縮合反應之條件(方法)並沒有特別限制,可採用過 去已知之方法,舉例爲例如在酸觸媒等觸媒存在下,於 60〜90 °C下進行脫水縮合12〜48小時之方法。 又’以上述通式(1)表示之化合物與以上述通式(2 )表不之化合物之混合比(莫耳比)雖沒有特別限制,但 就改善收率之觀點而言,相對於以通式(2 )表示之化合 物「1」’以通式(1 )表示之化合物較好爲1 .〇〜8.0,以 2.0〜6.0更佳,且以3.〇〜5.〇最佳。若在1〇〜8 〇範圍以外 時,則會使目標化合物之收率降低。 又’縮合反應溶液中之基質濃度(以通式(1)表示 之化合物與以通式(2 )表示之化合物之合計濃度)並沒 有特別限制,但就改善收率之觀點而言,以2莫耳/升以 上較佳,以4莫耳/升以上更佳,且以4〜丨〇莫耳/升爲最佳 。右基質濃度未達2莫耳/升,則會使目標化合物之收率 降低。 以通式(1)表示之化合物及以通式(2)表示之化合 物較好添加於反應溶劑中’至於反應溶劑較好爲有機溶劑 ,以醇系溶劑最佳。醇系溶劑可舉例爲例如甲醇、乙醇、 正丙醇、異丙醇等。該等中就提高本實施形態之化合物收 率之觀點而言,以甲醇、乙醇較佳。 -19- 200909403 縮合反應後,較好以有機溶劑洗滌所得沉澱物,至於 有機溶劑可舉例爲例如丙酮、甲基乙基酮、甲基異丁基酮 、環戊酮、環己酮、3-甲基環戊酮、2,6-二甲基環己酮等 酮類;甲醇、乙醇、正丙醇、異丙醇、正丁醇、第三丁醇 、環戊醇、環己醇、1,4-己二醇、1,4-己烷二甲醇等醇類 ;二乙醚、四氫呋喃、二噁烷等醚類;乙酸乙酯、乙酸正 丁酯、乙酸異戊酯等酯類;甲苯、二甲苯等芳香族烴類, 或酚、蒽、二甲基甲醯胺等。該等中以甲醇、乙醇、二乙 醚、四氫呋喃較佳。而且,該等有機溶劑可單獨使用或組 合複數種使用。 本實施形態之化合物’於使以通式(1 )表示之化合 物及以通式(2 )表不之化合物經縮合反應所得之I®合反 應產物較好爲以下列通式(3 )表示之化合物、以下列通 式(4 )表示之化合物或以下列通式(5 )表示之化合物: 〔化 1 8〕 (X1)p200909403 [Chem. 1 6] HO, (1-1) hct The number of carbon atoms in X2 in the compound represented by the formula (2), and the substituent of the substituted alkyl group can be exemplified by the above carbon number 1 to 10 The substituents of the alkyl group are the same. The compound represented by the formula (2) is any one of the alkylene groups having a carbon number of 1 to 8 (the structure of the obtained compound is different), and the obtained compound has no particular effect on the present invention, and can be produced in a high yield. In view of the above, X2 of the present embodiment is preferably an unsubstituted alkylene group having 2 to 6 carbon atoms and the most unsubstituted alkylene group having 3 carbon atoms. That is, the compound represented by the formula (2) is preferably a compound represented by the following formula (2-1) (glutaraldehyde) [I1] OHC-(CH2) 3 -CH0 (2-1) The structure of the main compound obtained by the condensation reaction is determined by the carbon number of X2 in the compound represented by (2). When X2 in the compound represented by the formula (2) is a propyl group, a compound represented by the formula (3) will be obtained, and in the compound of the formula (3, X2 is mainly a propyl group. Further, in the compound represented by the general formula (2), X2 which is a substituted -18-'8 substituted X3 may also be distinguished. In the case of the compound represented by the formula (4), the compound represented by the formula (4) will be mainly obtained, and in the compound represented by the formula (4), a compound in which X2 is a butyl group is mainly obtained. Further, when X2 in the compound represented by the formula (2) is an ethyl group, a compound represented by the formula (5) which will be described later is mainly obtained. The conditions (methods) of the condensation reaction are not particularly limited, and a conventionally known method can be employed, for example, a method in which dehydration condensation is carried out at 60 to 90 ° C for 12 to 48 hours in the presence of a catalyst such as an acid catalyst. Further, the mixing ratio (molar ratio) of the compound represented by the above formula (1) and the compound represented by the above formula (2) is not particularly limited, but from the viewpoint of improving the yield, The compound represented by the formula (2) represented by the formula (1) is preferably 1. 〇 8.0, more preferably 2.0 to 6.0, and most preferably 3. 〇 to 5. If it is outside the range of 1 〇 to 8 〇, the yield of the target compound is lowered. Further, the concentration of the substrate in the condensation reaction solution (the total concentration of the compound represented by the formula (1) and the compound represented by the formula (2)) is not particularly limited, but from the viewpoint of improving the yield, More preferably, it is more preferably 4 mol/liter or more, and 4 to 丨〇 mol/liter is most preferable. A concentration of the right substrate of less than 2 mol/liter lowers the yield of the target compound. The compound represented by the formula (1) and the compound represented by the formula (2) are preferably added to the reaction solvent. The reaction solvent is preferably an organic solvent, and the alcohol solvent is most preferred. The alcohol solvent may, for example, be, for example, methanol, ethanol, n-propanol, isopropanol or the like. Among these, methanol and ethanol are preferred from the viewpoint of increasing the yield of the compound of the present embodiment. -19- 200909403 After the condensation reaction, the resulting precipitate is preferably washed with an organic solvent, and examples of the organic solvent include, for example, acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclopentanone, cyclohexanone, and 3- Ketones such as methylcyclopentanone and 2,6-dimethylcyclohexanone; methanol, ethanol, n-propanol, isopropanol, n-butanol, tert-butanol, cyclopentanol, cyclohexanol, 1 An alcohol such as 4-hexanediol or 1,4-hexanedimethanol; an ether such as diethyl ether, tetrahydrofuran or dioxane; an ester such as ethyl acetate, n-butyl acetate or isoamyl acetate; toluene; An aromatic hydrocarbon such as xylene or phenol, hydrazine or dimethylformamide. Among these, methanol, ethanol, diethyl ether and tetrahydrofuran are preferred. Further, the organic solvents may be used singly or in combination of plural kinds. The I® reaction product obtained by subjecting the compound represented by the formula (1) and the compound represented by the formula (2) to a condensation reaction is preferably represented by the following formula (3). a compound, a compound represented by the following formula (4) or a compound represented by the following formula (5): [Chem. 1 8] (X1)p

(上述通式(3 )中’ X1彼此獨立表示碳數1〜1 0之經取代 -20- 200909403 或未經取代之烷基、碳數2 i u 取代或未經取 基、碳數2〜1 〇之經取代成φ 之烯 取代或未經取代之炔基、碳》7〜1〇之 ’fe取代或未經取代之芳I* # 之 取代之产1…一…碳數1〜10之經取代或未經 基、或經取代或未經取代之苯氧基,χ2彼此獨 ^㈣Η之經取代或未經取代之伸院基,"皮此獨 1表不0或1 )。 再者,上述通式(3 )亦可爲如下列通式(3_ 者·. )尸/τ不 〔化 1 9〕(In the above formula (3), 'X1 independently of each other means a substituted carbon-20 to 200909403 or an unsubstituted alkyl group, a carbon number of 2 iu substituted or unsubstituted, and a carbon number of 2 to 1. Substituting a substituted or unsubstituted alkynyl group of φ, a substituted or unsubstituted aryl I*# substitution of a carbon-based 7~1〇1... a carbon number of 1 to 10 Substituted or unsubstituted, unsubstituted or unsubstituted phenoxy group, χ2 is substituted or unsubstituted with each other, and the skin is not 0 or 1). Furthermore, the above formula (3) may also be of the following formula (3_ 者..) 尸/τ不(化1 9)

(上述通式(3-1)中,X1彼此獨立表示碳數之經取 代或未經取代之烷基、碳數2〜i 〇之經取代或未經取代之 烯基、碳數2〜1〇之經取代或未經取代之炔基 '碳數7〜ic 之經取代或未經取代之芳烷基、碳數1〜1 0之經取代或未 經取代之烷氧基、或經取代或未經取代之苯氧基,χ2彼此 獨立表示碳數1〜8之經取代或未經取代之伸烷基,ρ彼此 獨立表示0或1 )。 以通式(3 )表示之化合物中,較好爲X2係伸丙基之 化合物。以通式(3 )表示之化合物中之X2爲伸丙基之化 €物由於可以高收率及低成本製造而較佳。 -21 - 200909403 另外,X2爲伸丙基之以通式(3 )表示之化合物中, 較好爲以下式(6)表示之化合物。亦即,通式(3)中, 較好X2爲伸丙基且p爲0。該等之以下式(6)表示之化 合物(亦即,通式(3 )中,X2爲伸丙基,p爲0之化合 物)可以更高收率、低成本製造故較佳。 〔化 2 0〕(In the above formula (3-1), X1 independently represents a substituted or unsubstituted alkyl group having a carbon number, a substituted or unsubstituted alkenyl group having 2 to 2 carbon atoms, and a carbon number of 2 to 1; Substituted or unsubstituted alkynyl 'substituted or unsubstituted aralkyl group having a carbon number of 7 to ic, substituted or unsubstituted alkoxy group having 1 to 10 carbon atoms, or substituted Or an unsubstituted phenoxy group, χ2 independently of each other represents a substituted or unsubstituted alkylene group having 1 to 8 carbon atoms, and ρ independently represents 0 or 1). Among the compounds represented by the formula (3), a compound of a propyl group of X2 is preferred. In the compound represented by the formula (3), X2 is a propyl group, and it is preferable because it can be produced in a high yield and at a low cost. Further, in the compound represented by the formula (3) wherein X2 is a propyl group, a compound represented by the following formula (6) is preferred. That is, in the formula (3), X2 is preferably a propyl group and p is 0. Such a compound represented by the following formula (6) (i.e., a compound in which the X2 is a propyl group and a p is 0 in the formula (3)) can be produced in a higher yield and at a lower cost. 〔化 2 0〕

以通式(6)表示之化合物可藉由使以通式(丨-1)表 示之化合物與以通式(2_1)表示之化合物(戊二醛)在 例如酸觸媒等觸媒存在下,於60〜90 °C下進行脫水縮合 12〜48小時而獲得。 -22- 200909403 (X1)pThe compound represented by the formula (6) can be obtained by a compound represented by the formula (丨-1) and a compound represented by the formula (2_1) (glutaraldehyde) in the presence of a catalyst such as an acid catalyst. Obtained by dehydration condensation at 60 to 90 ° C for 12 to 48 hours. -22- 200909403 (X1)p

(4) (上述通式(4 )中,X 1彼此獨立表示碳數1〜1 0之經取代 或未經取代之烷基、碳數2〜1 0之經取代或未經取代之烯 基、碳數2〜10之經取代或未經取代之炔基、碳數7〜10之 經取代或未經取代之芳烷基、碳數1〜1 〇之經取代或未經 取代之烷氧基、或經取代或未經取代之苯氧基,X2彼此獨 立表示碳數1〜8之經取代或未經取代之伸烷基,p彼此獨 立表示〇或1 )。 再者,上述通式(4)可爲如下列通式(4-1)所示者 -23- 200909403 〔化 22〕(4) (In the above formula (4), X 1 independently represents a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, and a substituted or unsubstituted alkenyl group having 2 to 10 carbon atoms. a substituted or unsubstituted alkynyl group having 2 to 10 carbon atoms, a substituted or unsubstituted aralkyl group having 7 to 10 carbon atoms, or a substituted or unsubstituted alkoxy group having 1 to 1 carbon number. A substituted or unsubstituted phenoxy group, X2 independently of each other represents a substituted or unsubstituted alkylene group having 1 to 8 carbon atoms, and p independently of each other represents hydrazine or 1). Further, the above formula (4) may be as shown in the following formula (4-1) -23- 200909403 [Chem. 22]

(上述通式(4_丨)中,χ丨油队 代或未經取代之院基、碳數2 :立表示碳數1〜1〇之經取 嫌基、碳數2,之經取代或未二經取代或未經取代之 之經取代1 ± — a取代之炔基、碳數7〜1 〇 ==代之芳院基、碳數Μ之經取代或未 =之院氧基、或經取代或未經取代之苯氧基,X、此 獨:::碳數Η之經取代或未經取代之伸院基,。彼此 獨ϋ表不〇或1)。 以通式(4 )表示之化合物中,較好爲χ2係伸丁基之 化口物。以通式(4 )表示之化合物中之X2爲伸丁基之化 合物由於可以高收率及低成本製造故而較佳。 另外’ X2爲伸丁基之以通式(4)表示之化合物中, 較好爲以下式(7)表示之化合物。亦即,通式(4)中, 以X2爲伸丁基,且ρ爲0較佳。該等之以下式(7)表示 之化合物(亦即,通式(4 )中X2爲伸丁基,Ρ爲〇之化 合物)可以更高收率、低成本製造故而較佳。 -24- 200909403 〔化 23〕(In the above formula (4_丨), the sputum team replaces or replaces the yard base, carbon number 2: stands for carbon number 1~1〇, the carbon number is 2, and the carbon number is substituted or a substituted or unsubstituted alkynyl group substituted with 1 ± a, a carbon number of 7 to 1 〇 = = a substituted aryl group, a carbon number substituted or not = a oxy group, or Substituted or unsubstituted phenoxy group, X, this alone::: substituted or unsubstituted extender base of carbon number, mutually exclusive or 1). Among the compounds represented by the formula (4), a quinone-based butyl group is preferred. Among the compounds represented by the formula (4), a compound wherein X2 is a butyl group is preferred because it can be produced in a high yield and at a low cost. Further, in the compound represented by the formula (4) wherein X2 is a butyl group, the compound represented by the following formula (7) is preferred. That is, in the formula (4), X2 is a butyl group, and ρ is preferably 0. The compound represented by the following formula (7) (i.e., the compound of the formula (4) wherein X2 is a butyl group and the hydrazine is a hydrazine) can be produced in a higher yield and at a lower cost. -24- 200909403 [Chem. 23]

以通式(7 )表示之化合物可藉由使以通式(1 - 1 )表 示之化合物與以通式(2-2 )表示之化合物在例如酸觸媒 等觸媒存在下,於60〜90°C下進行脫水縮合12〜48小時而 獲得。 〔化 24〕 (2-2 )The compound represented by the formula (7) can be used in the presence of a compound represented by the formula (1-1) and a compound represented by the formula (2-2) in the presence of a catalyst such as an acid catalyst, at 60~ Obtained by dehydration condensation at 90 ° C for 12 to 48 hours. 〔化 24〕 (2-2)

OHC— ( CH2 ) 4 —CHO 化25OHC— ( CH2 ) 4 —CHO 25

⑶ -25- 200909403 (上述通式(5 )巾’ χΐ彼此獨立表示碳數μ。之經取 或未經取代之院基、碳^ 2〜1〇之經取代或未經取代之稀 基、碳數2〜1〇之經取代或未經取代之炔基、碳數7〜10之 經取代或未經取代少宅:户· 之方k基、碳數丨〜丨〇之經取代或未經 取代之院氧基、或經取代或未經取代之苯氧基,p彼此獨 I表不〇或1,η表示0以上之整數)。 以通式(5)表示之化合物中,較好爲以下式(8)表 示之化合物。亦即’通式(5) φ,以ρ爲〇較佳。該等 之以下式(8 )表示之化合物(亦即,ρ爲〇之化合物)可 以高收率、低成本製造故而較佳。若以下式(8 )表示之 化口物中之η爲丨以上之整數’其優點爲塗佈性更爲良好 〔化 26〕(3) -25- 200909403 (The above formula (5) towel's are independent of each other and represent a carbon number of μ. The substituted or unsubstituted garden base, the substituted or unsubstituted base of carbon 2~1〇, Substituted or unsubstituted alkynyl group having a carbon number of 2 to 1 Å, substituted or unsubstituted carbon number of 7 to 10, less than or less than the number of carbon atoms, carbon number 丨〇~丨〇 The substituted oxy group, or the substituted or unsubstituted phenoxy group, p each independently represents 1 or η represents an integer of 0 or more). Among the compounds represented by the formula (5), a compound represented by the following formula (8) is preferred. That is, the general formula (5) φ is preferably ρ. The compound represented by the following formula (8) (i.e., a compound in which ρ is ruthenium) can be produced in a high yield and at a low cost. If η in the aliquot represented by the following formula (8) is an integer greater than 丨, the advantage is that the coating property is better.

(上述通式(8)中,η表示〇以上之整數)。 以通式(8)表示之化合物可藉由使以通式(1-1)表 示之化合物與以通式(2-3 )表示之化合物在例如酸觸媒 等觸媒存在下,於60〜90°C下進行脫水縮合12〜48小時而 -26- 200909403 獲得。 〔化 27〕 OHC— ( CH2 ) 4 —CHO ( 2-2 ) 再者’以上式(2-3 )表示之化合物可藉由例如使以 下式(2-4)表示之化合物在酸觸媒下,與水反應而產生 。據此’可藉由使以通式(1 )表示之化合物與以下列通 式(2-4 )表示之化合物在例如水及酸觸媒存在下,於 60〜90 °C下進行脫水縮合12〜48小時而獲得以通式(5 )表 示之化合物。(In the above formula (8), η represents an integer of 〇 or more). The compound represented by the formula (8) can be used in the presence of a compound represented by the formula (1-1) and a compound represented by the formula (2-3) in the presence of a catalyst such as an acid catalyst, in 60~ Dehydration condensation was carried out at 90 ° C for 12 to 48 hours and from -26 to 2009 09403. [Chem. 27] OHC—(CH2) 4 —CHO ( 2-2 ) Further, the compound represented by the above formula (2-3) can be, for example, a compound represented by the following formula (2-4) under an acid catalyst. , produced by reaction with water. According to this, the compound represented by the formula (1) and the compound represented by the following formula (2-4) can be subjected to dehydration condensation at 60 to 90 ° C in the presence of, for example, water and an acid catalyst. The compound represented by the formula (5) is obtained in ~48 hours.

〔1-2〕氫化: 接著,本實施形態之化合物可爲使以源自通式(1 ) 表示之化合物之苯環之不飽和鍵氫化(以下,簡稱爲「氫 化」)所得者。該等苯環之不飽和鍵經氫化前之縮合反應 產物雖然於波長193 nm附近爲吸收大之化合物,但藉由氫 化,變成在波長1 9 3 nm附近吸收小之化合物(本實施形態 之化合物),因此藉由包含本實施形態之化合物做爲材料 之敏輻射線性樹脂組成物形成光阻劑膜時’可提高所形成 之光阻劑膜對ArF準分子雷射之透過性。另外’藉由氫化 ,由於可改善於有機溶劑中之溶解性,故可提高塗佈包含 -27- 200909403 本實施形態之化合物做爲材料之敏輻射線性組成物時之塗 佈性。 本實施形態之化合物較好爲使以通式(3 )表示之化 合物、以通式(4 )表示之化合物或以通式(5 )表示之化 合物氫化而得者’更好爲使以通式(6 )表示之化合物、 以通式(7)表示之化合物或以通式(8)表示之化合物氫 化而得者,最好爲以下式(9 )表示之化合物、以下式( 1〇)表示之化合物或以下式(1〇表示之化合物。再者, 以下式(11)表示之化合物中之n較好爲1以上之整數。 若以下式(1 1 )表示之化合物中之n爲i以上之整數,則 具有塗佈性進一步獲得改善之優點。 〔化 2 9〕[1-2] Hydrogenation: The compound of the present embodiment may be obtained by hydrogenating an unsaturated bond of a benzene ring derived from the compound represented by the formula (1) (hereinafter, simply referred to as "hydrogenation"). The condensation reaction product of the benzene ring before hydrogenation is a compound having a large absorption near a wavelength of 193 nm, but by hydrogenation, it becomes a compound which absorbs small at a wavelength of about 193 nm (the compound of this embodiment) Therefore, when the photoresist film is formed by the radiation sensitive linear resin composition containing the compound of the present embodiment as a material, the permeability of the formed photoresist film to the ArF excimer laser can be improved. Further, by hydrogenation, since the solubility in an organic solvent can be improved, the coating property when the linear composition containing the sensitive radiation of the compound of the embodiment of -27-200909403 is applied can be improved. The compound of the present embodiment is preferably a compound obtained by hydrogenating a compound represented by the formula (3), a compound represented by the formula (4) or a compound represented by the formula (5). (6) The compound represented by the formula (7) or the compound represented by the formula (8) is preferably hydrogenated, and the compound represented by the following formula (9) is represented by the following formula (1). In the compound represented by the following formula (11), n is preferably an integer of 1 or more. In the compound represented by the following formula (1 1 ), n is i or more. The integer is an advantage that the coating property is further improved. [Chem. 2 9]

ho^^oh (qh2)3 ______ -28- 200909403 〔化 3 0〕Ho^^oh (qh2)3 ______ -28- 200909403 〔化3 0〕

〔化 3 1〕〔化 3 1〕

(上述通式(11)中,η表示0以上之整數)。 本實施形態之化合物,就改善對於ArF準分子雷射之 透過性之觀點而言,經氫化不飽和鍵相對於縮合反應產物 中所含全部苯環之全部不飽和鍵之比例,較好爲3 0〜1 0 0 % ’就改善對於ArF準分子雷射之透過性之觀點而言,以 60〜100%更佳’且以1〇〇% (縮合反應產物中全部不飽和鍵 均經氫化之狀態)爲最佳。 至於使縮合反應產物氫化(氫化反應)之方法可採用 過去習知之用以使不飽和鍵氫化之方法。亦即,可舉例爲 -29- 200909403 例如可在均一系或不均一系之氫化觸媒存在下,將氫導入 有機溶劑中之縮合反應產物中之方法。有機溶劑中之縮合 反應產物濃度以1〜70質量%爲較佳,以1〜40質量%更好 。而且,有機溶劑並無限制,只要對氫化觸媒不產生不良 影響則可無特別限制地使用。另外,有機溶劑以醇系溶劑 較佳,至於醇系溶劑可舉例爲例如甲醇、乙醇、正丁醇、 異丙醇等。該等中以甲醇、乙醇較佳。 氫化觸媒若爲具有氫化反應活性之金屬或非金屬觸媒 ,則可無特別限制地使用。具體而言可舉例爲Fe、Co、 Ni、Ru、Rh、Pd、Ir、Os、Pt、Cr、Te、Μη、Ti、V、Zr 、Mo、W系氫化觸媒。該等觸媒可單獨使用或組合複數 種使用。 氫化反應之溫度以〇〜3 0 0 °C較佳,以2 0〜1 5 更佳。 若反應溫度超過3 00 °C,則容易產生副反應。氫化反應時 之氫氣壓以〇〜39Mpa爲較佳,以0.5〜20MPa更佳。 氫化反應後較好藉由再沉澱純化法、沉澱法、離心法 、過濾法等去除氫化觸媒。 〔實施例〕 以下基於本發明之實施例具體說明本發明,但本發明 並不限定於該等實施例。再者,實施例、比較例中之「份 」及「%」若無特別說明則以質量爲準。 (實施例1 ) -30- 200909403 將2.20克(20毫莫耳)間苯二甲酸溶於4.5毫升乙 醇中’且添加1 .5毫升鹽酸。攪拌該溶液且冰冷至5。(:, 緩慢滴加1 · 0 0克(5毫莫耳)之5 0 %戊二醛水溶液。隨後 ,在8 0 °C下加熱4 8小時。反應結束後,析出固體且使反 應溶液冷卻至室溫後,於攪拌下,注入甲醇且洗滌固體。 過濾收集沉澱物後,重複3次以甲醇洗滌〜過濾之步驟。 使所得固體在室溫下減壓乾燥2 4小時。結果,獲得粉末 狀淡黃色固體(產量:1 . 1 8克(收率:8 3 % ),表1中以 「A- 1」表示)。所得淡黃色固體之構造確認係以μALDI-TOF-MS (型號 SHIMAZU/KRATOS Matrix 支援雷射離子 化飛行時間型質量分析裝置「KOMPACT MALDI IV tDE」 ,島津製作所公司製)、IR (型號「FT-IR 420型」,日 本分光公司製)及1H-NMR (型號「JNM-ECA- 5 00型」, 日本電子公司製)進行。該等結果顯示於下。 MALDI-TOF-MS:顯示獲得分子量1704.63之化合物 〇 IR (薄膜法):(cm·1 ) 3406( v on) ; 2931 ( v c-w) ; 1621' 1505' 1436( V c = c (芳族)) ; h-NMROOOMHz’ 溶劑 DMSO-d6’ 內部標準 TMS) :δ ( ppm) =0.86~2.35 ( b, 12.OH) , 3.98 — 4.22 ( m, 4·0Η),6.09〜7·42 ( m, 8.0 H ) , 8 · 6 5 〜9.5 6 ( m, 8.0 H ) 所得淡黃色固體爲以下式(6 )表示之化合物: -31 - 200909403 〔化 32〕(In the above formula (11), η represents an integer of 0 or more). In the compound of the present embodiment, the ratio of the hydrogenated unsaturated bond to the total unsaturated bond of all the benzene rings contained in the condensation reaction product is preferably 3 in terms of improving the permeability to the ArF excimer laser. 0 to 1 0 0 % 'In terms of improving the permeability of the ArF excimer laser, it is preferably 60 to 100%' and 1% by weight (all unsaturated bonds in the condensation reaction product are hydrogenated) Status) is optimal. As the method for hydrogenating (hydrogenation) the condensation reaction product, a conventionally used method for hydrogenating an unsaturated bond can be employed. That is, for example, -29 to 200909403, for example, a method of introducing hydrogen into a condensation reaction product in an organic solvent in the presence of a homogeneous or heterogeneous hydrogenation catalyst. The concentration of the condensation reaction product in the organic solvent is preferably from 1 to 70% by mass, more preferably from 1 to 40% by mass. Further, the organic solvent is not limited, and it can be used without particular limitation as long as it does not adversely affect the hydrogenation catalyst. Further, the organic solvent is preferably an alcohol solvent, and the alcohol solvent may, for example, be methanol, ethanol, n-butanol or isopropanol. Among these, methanol and ethanol are preferred. The hydrogenation catalyst can be used without particular limitation if it is a metal or non-metal catalyst having hydrogenation activity. Specific examples thereof include Fe, Co, Ni, Ru, Rh, Pd, Ir, Os, Pt, Cr, Te, Μη, Ti, V, Zr, Mo, and W-based hydrogenation catalysts. These catalysts may be used singly or in combination of plural kinds. The temperature of the hydrogenation reaction is preferably from 〇 to 300 ° C, more preferably from 2 0 to 1 5 . If the reaction temperature exceeds 300 ° C, side reactions are likely to occur. The hydrogen pressure at the time of the hydrogenation reaction is preferably 3939 Mpa, more preferably 0.5 to 20 MPa. After the hydrogenation reaction, the hydrogenation catalyst is preferably removed by a reprecipitation purification method, a precipitation method, a centrifugation method, a filtration method, or the like. [Examples] Hereinafter, the present invention will be specifically described based on examples of the present invention, but the present invention is not limited to the examples. In addition, in the examples and comparative examples, "parts" and "%" are subject to quality unless otherwise specified. (Example 1) -30- 200909403 2.20 g (20 mmol) of isophthalic acid was dissolved in 4.5 ml of ethanol' and 1.5 ml of hydrochloric acid was added. The solution was stirred and ice cooled to 5. (:, slowly add 1 · 0 0 g (5 mmol) of 50% aqueous solution of glutaraldehyde. Then, heat at 80 ° C for 48 hours. After the reaction, precipitate the solid and cool the reaction solution. After the mixture was stirred at room temperature, methanol was added and the solid was washed. After collecting the precipitate by filtration, the step of washing with methanol was repeated three times to filter. The obtained solid was dried under reduced pressure at room temperature for 24 hours. A pale yellow solid (yield: 1.18 g (yield: 83%), indicated by "A-1" in Table 1). The structure of the obtained pale yellow solid was confirmed by μALDI-TOF-MS (Model SHIMAZU) /KRATOS Matrix supports the laser ionization time-of-flight mass spectrometer "KOMPACT MALDI IV tDE", manufactured by Shimadzu Corporation, IR (model "FT-IR 420", manufactured by JASCO Corporation) and 1H-NMR (model " JNM-ECA- 5 00", manufactured by Nippon Denshi Co., Ltd.) The results are shown below. MALDI-TOF-MS: shows a compound having a molecular weight of 1704.63 〇IR (film method): (cm·1 ) 3406 ( v On) 2931 ( v cw) ; 1621 ' 1505 ' 1436 ( V c = c (aromatic)); h-NMROOOMHz' solvent DMSO-d6' internal standard TMS): δ (ppm) = 0.86~2.35 ( b, 12.OH) , 3.98 — 4.22 ( m, 4·0Η), 6.09~7·42 ( m, 8.0 H) , 8 · 6 5 to 9.5 6 (m, 8.0 H ) The obtained pale yellow solid is a compound represented by the following formula (6): -31 - 200909403 [32]

將1.0克所得以式(6)表示之化合物與45克 入高壓釜中’且經混合。隨後,添加0.6克阮H Aldrich公司製造)作爲氫化觸媒,且以氮氣置換 之空氣。經氮氣置換後,使系統內維持在2 (TC,在 力5 0kg/cm2下維持30分鐘。隨後,將該高壓釜浸 之溫水浴中且維持3小時,使以式(6 )表示之化 行氫化反應。反應後,過濾反應溶液,分離出反應 之阮尼N i。將濾液加於水中產生析出物。隨後,進 乾燥24小時’獲得以下式(9 )表示之化合物(析 。而且,表1中以「A-2」表示該化合物。 乙醇饋 g Ni ( 系統內 氯氣壓 在 5 0。。 合物進 溶液中 行減壓 出物) -32- 200909403 〔化 3 3〕1.0 g of the compound represented by the formula (6) and 45 g of the obtained product were placed in an autoclave and mixed. Subsequently, 0.6 g of 阮H Aldrich Co., Ltd. was added as a hydrogenation catalyst, and air was replaced with nitrogen. After replacement with nitrogen, the system was maintained at 2 (TC, maintained at a force of 50 kg/cm 2 for 30 minutes. Subsequently, the autoclave was immersed in a warm water bath for 3 hours to express the expression (6). After the reaction, the reaction solution is filtered, and the reacted monidene N i is separated. The filtrate is added to water to produce a precipitate, and then dried for 24 hours to obtain a compound represented by the following formula (9). The compound is represented by "A-2" in Table 1. Ethanol feed g Ni (the chlorine pressure in the system is 50%. The compound is introduced into the solution under reduced pressure) -32- 200909403 [Chem. 3 3]

爲了對所得以式(9 )表示之化合物進行評價,因此 調配如下之組成物。首先,使10 0份所得以式(9 )表示 之化合物、6 0 0份作爲溶劑之環己酮(表1中以「D -1」 表示)及1500份丙二醇單甲基醚乙酸酯(表1中以「D-2 j表示)混合。接著,使該混合物通過200nm之薄膜過濾 器過濾調配成均勻組成物溶液(敏輻射線性樹脂組成物) 。針對所調配之組成物溶液進行下列評價。 〔塗佈性〕 使用東京電子公司製造之「CLEAN TRACK ACT-8」 ,將組成物溶液旋轉塗佈於矽晶圓上之後,在7〇°C下加熱 處理90秒(表1中以「PB」顯示),獲得1 OOnm之光阻 劑膜。以目視觀察該光阻劑膜之表面進行塗佈性評價。評 價基準爲未觀察到條紋表示爲「良好」,觀察到條紋時則 表示爲「不良」。 -33- 200909403 〔透過率〕 使用東京電子公司製造之「CLEAN TRACK ACT-8」 ,將組成物溶液旋轉塗佈於M g F 2基板上,在7 0 °C下加熱 處理90秒(表1中以「PB」顯示),獲得1 〇〇nm之光阻 劑膜。以分光計器公司製之「VU-2 01型真空紫外分光光 度計」測定於193nm之透過率。 以本實施例調配之組成物溶液(敏輻射線性樹脂組成 物)之評價結果,塗佈性良好且透過率爲90%。由該評價 結果,確認本實施例之化合物由於於ArF準分子雷射之透 過率高,於含於敏輻射線性樹脂組成物中之際,若以該敏 輻射線性樹脂組成物形成光阻劑膜,則該光阻劑膜之內部 可充分受到光照射(ArF準分子雷射)。據此,若使用本 實施例之化合物,認爲可獲得光阻劑圖案之線邊緣粗糙度 降低之光阻劑膜。 (實施例2 ) 將1 0 0份實施例中獲得之以式(9 )表示之化合物、 2 1 0 〇份作爲溶劑之丙二醇單甲基醚乙酸酯混合。使該混合 液通過孔徑200nm之薄膜過濾器過濾’調配成均句組成物 溶液(敏輻射線性樹脂組成物),且進行評價。評價結果 列於表1。 -34- 200909403 〔表1〕 化合物 溶劑 溶解性 PB1 丨条件 塗佈性 透過率 (%) 調配量 (份) 種類 調配量 (份) 種類 調配量 (份) 溫度 (。〇 時間 (秒) 實施例1 A-2 100 D-1 600 D-2 1500 良好 70 90 良好 90 實施例2 A-2 100 D-2 2100 良好 70 90 良好 90 比較例1 A-1 100 D-1 600 D-2 1500 不良 比較例2 A-1 100 _ - D-2 2100 不良 比較例3 A-3 100 D-1 600 D-2 1500 良好 70 90 良好 0 比較例4 A-4 100 D-1 600 D-2 1500 良好 70 90 良好 4 (比較例1 ) 混合1 〇〇份之實施例1中製備之淡黃色固體(以式( 6 )表示之化合物)、600份作爲溶劑之環己酮及1 5 00份 丙二醇單甲基醚乙酸酯。但溶解性差,無法獲得均勻之溶 液。因此,無法進行塗佈性及透過率之評價。 (比較例2) 混合1 00份之實施例1中製備之淡黃色固體(以式( 6 )表示之化合物)、2 1 00份作爲溶劑之丙二醇單甲基醚 乙酸酯。但溶解性差,無法獲得均勻之溶液。因此’無法 進行塗佈性及透過率之評價。 (比較例3 ) 將100克4-第三丁氧基苯乙烯、4.7克偶氮雙異丁腈 、1.5克第三-十二烷硫醇及100克丙二醇單甲基醚投入分 液漏斗中,且在室溫下攪拌成均勻溶液。在氮氣中升溫至 -35- 200909403 8 0 °C,且攪拌下進行聚合反應1 0分鐘。聚合結束後,於 反應溶液中加入大量甲醇使之再沉澱而純化。使如此獲得 之90克聚合物溶解於5 00克之丙二醇單甲基醚中,且使 之經減壓濃縮。 接著,於分液漏斗中饋入約250克之經減壓濃縮之聚 合物溶液、40克之1 〇%硫酸水溶液,在攪拌、回流下進行 水解反應。隨後,添加大量離子交換水,經再沉澱而純化 ,且在50°C下真空乾燥,藉此獲得60克之4-羥基苯乙烯 聚合物。且,表1中以「A-3」表示該聚合物。 對4-羥基苯乙烯聚合物測定其Mw及Μη,且計算出 Mw/Mn。Mw及Μη之測定係在TOSOH公司製造之高速 GPC裝置(型式「HLC-8120」)上使用TOSOH公司製造 之 GPC 管柱(商品名「G2000HXL」:2 支,「G3000HXL 」:1支,「G4 000HXL」:1支),流量爲1.〇毫升/分鐘 ,以四氫呋喃作爲溶離液,在管柱溫度4 (TC之分析條件下 ,以單分散聚苯乙烯作爲標準藉由凝膠滲透層析(GPC ) 進行。本合成例中獲得之4-羥基苯乙烯聚合物之Mw爲 1 0800,Mw/Mn 爲 1.58。 混合1 〇 〇份所得4 -羥基苯乙烯聚合物、6 0 0份作爲溶 劑之環己酮及1500份之丙二醇單甲基醚乙酸酯。使該混 合物經孔徑2 0 0 nm之薄膜過濾器過濾,調配成均勻之組成 物溶液,且進行評價。其評價結果列於表1。 (比較例4 ) -36- 200909403 將3.5克實施例1中製備之淡黃色固體(以式(6 ) 表示之化合物)添加於40克之1-甲基-2-吡咯啶酮之後, 進一步添加〇 · 8克四丁基溴化銨,在7 0 °C下攪拌4小時使 之溶解。溶解後,添加3.3克碳酸鉀,在70t下攪拌1小 時。隨後,緩慢添加預先溶解於20克1 -甲基-2-吡咯啶酮 中之6.9克溴乙酸2-甲基-2-金剛烷基酯,且在70°C下攪 拌6小時。攪拌後,冷卻至室溫,以水/二氯甲烷進行萃 取。接著,以100毫升3 %草酸水溶液洗滌3次後,再以 水洗滌2次。丟棄水層後,有機層以硫酸鎂乾燥。隨後, 經以己烷:乙酸乙酯=1 :4作爲溶出液進行矽膠管柱層析純 化,獲得3.2克以下列通式(A-4 )表示之化合物(表1 中以「A-4表示」)。而且,進行iH-NMR分析確認以下 列通式(A-4 )表示之化合物之保護率(以下列通式(A-4 )表示化合物中之酚性羥基之氫原子以2 -甲基-2 -金剛烷 氧基羰基甲基(以下式(R-1)表示之基)取代之比例) 爲 4 0%。 〔化 3 4〕In order to evaluate the obtained compound represented by the formula (9), the following composition was formulated. First, 100 parts of the compound represented by the formula (9), 600 parts of cyclohexanone as a solvent (indicated by "D -1" in Table 1), and 1500 parts of propylene glycol monomethyl ether acetate ( The mixture was mixed as "D-2j" in Table 1. Then, the mixture was filtered through a 200 nm membrane filter to prepare a homogeneous composition solution (sensitive radiation linear resin composition). The following evaluations were performed on the formulated composition solution. [Coating property] Using a "CLEAN TRACK ACT-8" manufactured by Tokyo Electronics Co., Ltd., the composition solution was spin-coated on a tantalum wafer, and then heat-treated at 7 ° C for 90 seconds (in Table 1) PB" shows), a photoresist film of 100 nm was obtained. The surface of the photoresist film was visually observed for applicability evaluation. The evaluation criteria indicated that the unseen stripes were indicated as "good", and when the stripes were observed, they were indicated as "bad". -33- 200909403 [Transmission rate] Using a "CLEAN TRACK ACT-8" manufactured by Tokyo Electronics Co., Ltd., the composition solution was spin-coated on a MgF 2 substrate and heat-treated at 70 ° C for 90 seconds (Table 1). In the middle of "PB", a photoresist film of 1 〇〇 nm is obtained. The transmittance at 193 nm was measured by a "VU-2 01 vacuum ultraviolet spectrophotometer" manufactured by Spectrophotometer. As a result of evaluation of the composition solution (sensitive radiation linear resin composition) prepared in the present example, the coating property was good and the transmittance was 90%. From the results of this evaluation, it was confirmed that the compound of the present example has a high transmittance due to the ArF excimer laser, and when it is contained in the linear radiation-sensitive resin composition, the photoresist film is formed by using the radiation-sensitive linear resin composition. Then, the inside of the photoresist film can be sufficiently irradiated with light (ArF excimer laser). Accordingly, when the compound of the present embodiment is used, it is considered that a photoresist film having a reduced line edge roughness of the photoresist pattern can be obtained. (Example 2) 100 parts of the compound represented by the formula (9) obtained in the examples and 2,100 parts of propylene glycol monomethyl ether acetate as a solvent were mixed. The mixture was filtered through a membrane filter having a pore size of 200 nm to prepare a homogenous composition solution (sensitive radiation linear resin composition), and evaluated. The evaluation results are shown in Table 1. -34- 200909403 [Table 1] Solvent solubility of compound PB1 丨 Conditional coating transmittance (%) Formulation amount (parts) Type of compounding amount (parts) Type of compounding amount (parts) Temperature (. 〇 time (seconds) Example 1 A-2 100 D-1 600 D-2 1500 Good 70 90 Good 90 Example 2 A-2 100 D-2 2100 Good 70 90 Good 90 Comparative Example 1 A-1 100 D-1 600 D-2 1500 Bad Comparative Example 2 A-1 100 _ - D-2 2100 Poor Comparative Example 3 A-3 100 D-1 600 D-2 1500 Good 70 90 Good 0 Comparative Example 4 A-4 100 D-1 600 D-2 1500 Good 70 90 Good 4 (Comparative Example 1) 1 part of the light yellow solid (the compound represented by the formula (6)) prepared in Example 1, 600 parts of cyclohexanone as a solvent, and 1 500 parts of propylene glycol Methyl ether acetate. However, the solubility was poor, and a uniform solution could not be obtained. Therefore, the applicability and the transmittance were not evaluated. (Comparative Example 2) 100 parts of the pale yellow solid prepared in Example 1 was mixed ( a compound represented by the formula (6)) and 2,100 parts of propylene glycol monomethyl ether acetate as a solvent. However, the solubility is poor and cannot be obtained. A homogeneous solution. Therefore, evaluation of coating properties and transmittance was not possible. (Comparative Example 3) 100 g of 4-third-butoxystyrene, 4.7 g of azobisisobutyronitrile, and 1.5 g of third-tenth were used. Dialkyl mercaptan and 100 g of propylene glycol monomethyl ether were put into a separatory funnel and stirred at room temperature to form a homogeneous solution. The temperature was raised to -35-200909403 80 ° C under nitrogen, and the polymerization was carried out under stirring. After the completion of the polymerization, a large amount of methanol was added to the reaction solution to reprecipitate and purify. 90 g of the polymer thus obtained was dissolved in 500 g of propylene glycol monomethyl ether, and concentrated under reduced pressure. About 250 g of the concentrated polymer solution under reduced pressure and 40 g of a 1% aqueous solution of sulfuric acid were fed into the separatory funnel, and the hydrolysis reaction was carried out under stirring and reflux. Subsequently, a large amount of ion-exchanged water was added and purified by reprecipitation. And drying under vacuum at 50 ° C, thereby obtaining 60 g of a 4-hydroxystyrene polymer. Further, the polymer is represented by "A-3" in Table 1. The Mw of the 4-hydroxystyrene polymer was measured. Μη, and calculate Mw/Mn. The measurement of Mw and Μη is in TOS GPC pipe made by TOSOH Co., Ltd. (product name "G2000HXL": 2 pieces, "G3000HXL": 1 piece, "G4 000HXL": 1 piece) is used for the high-speed GPC device (type "HLC-8120") manufactured by OH Corporation. The flow rate was 1. 〇ml/min, and tetrahydrofuran was used as the eluent. The gel was subjected to gel permeation chromatography (GPC) under the conditions of column temperature 4 (TC analysis using monodisperse polystyrene as a standard). The 4-hydroxystyrene polymer obtained in the synthesis example had a Mw of 1,800 and a Mw/Mn of 1.58. 1 〇 of the obtained 4-hydroxystyrene polymer, 600 parts of cyclohexanone as a solvent, and 1500 parts of propylene glycol monomethyl ether acetate were mixed. The mixture was filtered through a membrane filter having a pore size of 2 0 0 nm to prepare a homogeneous composition solution, and evaluated. The evaluation results are shown in Table 1. (Comparative Example 4) -36-200909403 3.5 g of the pale yellow solid (the compound represented by the formula (6)) prepared in Example 1 was added to 40 g of 1-methyl-2-pyrrolidone, and further added with hydrazine. 8 g of tetrabutylammonium bromide was dissolved by stirring at 70 ° C for 4 hours. After the dissolution, 3.3 g of potassium carbonate was added, and the mixture was stirred at 70 t for 1 hour. Subsequently, 6.9 g of 2-methyl-2-adamantyl bromoacetate previously dissolved in 20 g of 1-methyl-2-pyrrolidone was slowly added, and stirred at 70 ° C for 6 hours. After stirring, it was cooled to room temperature and extracted with water/dichloromethane. Subsequently, it was washed three times with 100 ml of a 3 % aqueous solution of oxalic acid, and then washed twice with water. After the aqueous layer was discarded, the organic layer was dried over magnesium sulfate. Subsequently, it was purified by hydrazine column chromatography using hexane:ethyl acetate = 1:4 as an eluate to obtain 3.2 g of a compound represented by the following formula (A-4) (indicated by "A-4" in Table 1 "). Further, iH-NMR analysis was carried out to confirm the protection ratio of the compound represented by the following formula (A-4) (the hydrogen atom of the phenolic hydroxyl group in the compound represented by the following formula (A-4) was 2-methyl-2 The ratio of the adamantyloxycarbonylmethyl group (the group represented by the following formula (R-1)) is 40%. [Chem. 3 4]

-37- 200909403 (上述通式(A-4)中R彼此獨立爲氫原子或以下式 )表示之基)。 〔化 3 5〕-37-200909403 (wherein R in the above formula (A-4) is independently a hydrogen atom or a formula represented by the following formula). [Chem. 3 5]

Ο —CH2—C—0 混合100份所得之以通式(A-4)表不之化合物、6〇〇 份作爲溶劑之環己酮及1 5 00份之丙二醇單甲基醚乙酸醋 。使該混合物經孔徑2 0 0 n m之薄膜過濾器過濾,調配成均 勻之組成物溶液,且進行評價。其評價結果列於表1。 由表1可明瞭,含有實施例1、2之化合物(以式(9 )表示之化合物)之敏輻射線性樹脂組成物,相較於比較 例3、4之敏輻射線性樹脂組成物,可確認對ArF準分子 雷射之透過性及塗佈性均優異。因此,使用ArF準分子雷 射作爲曝光光源之微影蝕刻技術中,可形成光阻劑圖案之 線邊緣粗糙度降低,且形成高精準度且安定之細微圖案之 光阻劑膜。 〔產業上利用之可能性〕 本發明之化合物可適合作爲敏輻射線性樹脂組成物, 其可形成光阻劑圖案之線邊緣粗糙度得以減低,且形成高 精準度且安定之細微圖案之光阻劑膜,作爲預測未來進行 更微細化之半導體裝置製造用之光阻劑膜的材料方面極爲 有用。 -38-Ο-CH2-C—0 100 parts of the obtained compound represented by the formula (A-4), 6 parts of cyclohexanone as a solvent, and 1 500 parts of propylene glycol monomethyl ether acetate vinegar were mixed. The mixture was filtered through a membrane filter having a pore size of 2 0 0 n m to prepare a homogeneous composition solution and evaluated. The evaluation results are shown in Table 1. As is clear from Table 1, the sensitive radiation linear resin composition containing the compound of Examples 1 and 2 (the compound represented by the formula (9)) can be confirmed as compared with the sensitive radiation linear resin composition of Comparative Examples 3 and 4. Excellent in permeability and coating properties to ArF excimer lasers. Therefore, in the lithography etching technique using the ArF excimer laser as the exposure light source, the line edge roughness of the photoresist pattern can be reduced, and a highly precise and stable fine pattern photoresist film can be formed. [Possibility of Industrial Applicability] The compound of the present invention can be suitably used as a linear composition of a radiation sensitive film, which can reduce the line edge roughness of the photoresist pattern, and form a high precision and stable fine pattern photoresist. The film of the film is extremely useful as a material for predicting a photoresist film for manufacturing a semiconductor device which is further miniaturized in the future. -38-

Claims (1)

200909403 十、申請專利範圍 1 一種化合物,俘使Ν γ、+ 係使以下述通式(1 )表示之化合物 及以下述通式(2 )表千卞几入 D财 卜 ,、七口物進行縮合反應,且使源 自以上述通式(1)宪+入 rfn » P ^ ^ ^ /、之化曰物中之苯環不飽和鍵氫化 而獲得之化合物: 〔化1〕200909403 X. Patent Application No. 1 A compound, which captures Ν γ, + is a compound represented by the following formula (1) and is expressed in the following formula (2). a condensation reaction, and a compound obtained by hydrogenating a benzene ring unsaturated bond in a ruthenium of the above formula (1) into rfn » P ^ ^ ^ /, wherein: (Chemical 1) (1) (上述通式(1)中,χ丨実 表碳數1〜10之經取代或未經取 代之烷基、碳數2〜1() 木蛀取 I取代或未經取代之烯基、 2〜1〇之經取代或未經 基數7〜1 0之經取代或 未經取代之芳烷基、碟動,,Λ — 碳數1〜10之經取代或未經取代之烷 氧基、或經取代或未,柯取^十々! >甘 人不虹取代之本虱基,ρ表示〇或丨), 〔化2〕 OHC —X2__ch〇 ( 2 ) (上述通式(2 )中,X2表示碳數卜8之經取代或未經取 代之伸烷基)。 2.如申請專利範圍第1項之化合物,其中使以上述 通式(1)表示之化合物及以上述通式(2)表示之化合物 經縮合反應獲得之縮合反應產物爲以下列通式(3 ) -39- 200909403 表示之化合物或以下列通式 之化合物、以下列通式 (5 )表示之化合物: 〔化3〕(1) (In the above formula (1), a substituted or unsubstituted alkyl group having a carbon number of 1 to 10, a carbon number of 2 to 1 (), an I substituted or unsubstituted alkene Substituted or unsubstituted or unsubstituted aralkyl, 2 - 1 芳 aralkyl, disc, Λ - substituted or unsubstituted alkoxy having 1 to 10 carbon atoms Base, or substituted or not, Ke Take ^ 十々! > Gan people not replaced by the base, ρ means 〇 or 丨), [Chemical 2] OHC —X2__ch〇( 2 ) (The above formula (2 In the formula, X2 represents a substituted or unsubstituted alkylene group of the carbon number. 2. The compound of claim 1, wherein the condensation reaction product obtained by subjecting the compound represented by the above formula (1) and the compound represented by the above formula (2) to a condensation reaction is the following formula (3) -39- 200909403 A compound represented by the following formula or a compound represented by the following formula (5): [Chemical 3] (3) (上述通式(3)中,X1彼此雜< 此獨从表示碳數1〜丨〇之 或未經取代之烷基、碳數2 "代 基、碳數2〜10之經取代或 代之烯 ^ ^ -i, ± I取代之炔基、碳數Q > \取代或未經取代之芳院 1 U之 θ - 棊、碳數1〜1 〇之經取代或$ # 驭代之k氧基、或經取 X未經 立袠千胎未經取代之苯氧基,χ2彼吒您 袠不碳數之經取佧 诹此獨 立袠示0或丨), 飞或未經取代之伸烷基,Ρ彼此獨 -40- 200909403(3) (In the above formula (3), X1 is heterozygous with each other; this alone represents a carbon number of 1 to fluorene or unsubstituted alkyl group, a carbon number of 2 " a substituent, and a carbon number of 2 to 10. Substituted or substituted alkynyl, ^I substituted alkynyl, carbon number Q > \substituted or unsubstituted aromatic 1 U θ - 棊, carbon number 1~1 〇 substituted or $ #驭代的克氧, or X taken unsubstituted 千千胎 unsubstituted phenoxy group, χ2 吒2 吒 袠 袠 碳 碳 袠 袠 袠 袠 袠 袠 袠 袠 袠 袠 袠 袠 袠 袠 袠 袠 袠 袠Unsubstituted alkylene, Ρ each other alone -200909403 (上述通式(4)中,X1彼此獨立表示碳數1〜10之經取代 或未經取代之烷基、碳數2〜1 0之經取代或未經取代之烯 基、碳數2〜1 0之經取代或未經取代之炔基、碳數7~ 1 0之 經取代或未經取代之芳烷基、碳數1〜1 〇之經取代或未經 取代之烷氧基、或經取代或未經取代之苯氧基,X2彼此獨 立表示碳數1 ~8之經取代或未經取代之伸烷基,p彼此獨 立表示〇或1 ), -41 - 200909403 〔化5〕(In the above formula (4), X1 independently represents a substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, a substituted or unsubstituted alkenyl group having 2 to 10 carbon atoms, and a carbon number of 2~ a substituted or unsubstituted alkynyl group of 10, a substituted or unsubstituted aralkyl group having 7 to 10 carbon atoms, a substituted or unsubstituted alkoxy group having 1 to 1 carbon number, or The substituted or unsubstituted phenoxy group, X2 independently of each other represents a substituted or unsubstituted alkylene group having 1 to 8 carbon atoms, and p independently of each other represents hydrazine or 1), -41 - 200909403 [Chemical 5] 上述通式(5)中,χ丨彻 一 或未經取代之烷基、碳數獨立表示碳數1〜10之經取代 基、碳數2〜10之經取代:1〇之經取代或未經取代之稀 經取代或未經取代之芳燒:經取代之炔基、碳㉟7,之 取代之院氧基、或經取代h㈣1〜1〇之經取代或未經 立 代或未經取代之苯氧基,P彼此獨 表不〇^,η表示〇以上之整數)。 武.如申師專利範圍第2項之化合物,其中以上述通 1 (3)表示之化合物、以上述通式(4)表示之化合物 以 L ^ 述通式(5)表τρ:之化合物分別爲以下式(6)表示之 化㈡物、以式(7 )表示之化合物或以式(8 )表示之化合 物: -42- 200909403 化6〕In the above formula (5), the alkyl group which is unsubstituted or unsubstituted, the carbon number independently represents a substituted group having 1 to 10 carbon atoms, and the substituted carbon number is 2 to 10: substituted or unsubstituted 1〇 Substituted dilute substituted or unsubstituted aromatic: substituted alkynyl, carbon 357, substituted alkoxy, or substituted h(tetra) 1~1〇 substituted or unsubstituted or unsubstituted Phenoxy group, P is unique to each other, and η represents an integer above 〇).武. The compound of claim 2, wherein the compound represented by the above formula (3), the compound represented by the above formula (4), and the compound of the formula (5) τρ: The compound represented by the following formula (6), the compound represented by the formula (7) or the compound represented by the formula (8): -42- 200909403 6 ⑹ 〔化7〕(6) [Chemistry 7] ⑺ 〔化(7) ⑻ -43 - 200909403 (上述通式(8)中’ η表示〇以上之整數)。 4 .如申請專利fc圍桌1〜3項中任一項之化合物,其 中經氫化之上述不飽和鍵之比例相對於上述縮合反應產物 中所含全部苯環之全部不飽和鍵爲30〜100 %。 5 · —種化合物之製造方法,係使以下列通式(丨)表 示之化合物及以下列通式(2 )表示之化合物進行縮合反 應,且使源自以上述通式(1)表示之化合物中之苯環不 飽和鍵氫化而獲得化合物: 〔化9〕(8) -43 - 200909403 (In the above formula (8), 'η represents an integer of 〇 or more). 4. The compound according to any one of claims 1 to 3, wherein the ratio of the unsaturated bond to the hydrogenation is 30 to 100% relative to the total unsaturated bond of all the benzene rings contained in the condensation reaction product. . A method for producing a compound obtained by subjecting a compound represented by the following formula (丨) and a compound represented by the following formula (2) to a condensation reaction, and a compound derived from the above formula (1) Hydrogenation of a benzene ring unsaturated bond to obtain a compound: [Chemical 9] (上述通式 )中,X1表示碳數1〜1()之, 代之烷基、碳數7 k取代或未經取 數2〜10之經取代或未經取代 2〜10之經取代或未經取代之炔基、_ 稀基、碳數 未經取代之芳烷基 X數7〜10之經取代或 基、碳數1〜1 0之經取件寸 氧基、或經取代琰 取代或未經取代之烷 代次未經取代之苯氧基,p表示0或 化10 CHO 〇HC、X2. (上述通式(2 ) — 代之伸院基)。I表示碳數1〜8之經取代或未經取 -44 - 200909403 6.如申請專利範圍第5項之化合物之製造方法,其 中使以上述通式(1)表示之化合物及以上述通式(2)表 示之化合物進行縮合反應,且使源自以上述通式(1 )表 示之化合物中之苯環不飽和鍵氫化,獲得以下列通式(9 )表示之化合物、以下列通式(1 0 )表示之化合物或以下 列通式(1 1 )表示之化合物: 〔化 1 1〕(in the above formula), X1 represents a carbon number of 1 to 1 (), substituted by an alkyl group, a carbon number of 7 k, or a substituted 2 to 10 substituted or unsubstituted 2 to 10 or Unsubstituted alkynyl, _, dilute, unsubstituted aralkyl X number 7 to 10 substituted or substituted, carbon number 1~1 0 substituted by oxy, or substituted hydrazine Or an unsubstituted alkane sub-substituted phenoxy group, p represents 0 or 10 CHO 〇 HC, X2. (the above formula (2) - substituted for the base). I represents a substituted or unsubstituted carbon number of 1 to 8 -44 - 200909403. 6. A process for producing a compound represented by the above formula (1), wherein the compound represented by the above formula (1) (2) The compound is subjected to a condensation reaction, and a benzene ring unsaturated bond derived from the compound represented by the above formula (1) is hydrogenated to obtain a compound represented by the following formula (9), which has the following formula ( a compound represented by 1 0 ) or a compound represented by the following formula (1 1 ): [Chemical Formula 1] 〔化 1 2〕[Chemical 1 2] (10) -45 - 200909403(10) -45 - 200909403 OH (11) OH (上述通式(11)中,n表示0以上之整數) -46 - 200909403 為符 圖件 表元 代之 定圖 指表 :案代 圖本本 表' ' 代 /-S 定一二 指CC ' 七 無 明 說 單OH (11) OH (in the above formula (11), n represents an integer of 0 or more) -46 - 200909403 is a map of the map element table: the representative map of the table ' ' generation /-S One or two fingers CC 'seven unclear single -4--4-
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