TW200908815A - Extreme ultraviolet light source device and extreme ultraviolet radiation generating method - Google Patents

Abstract

High temperature plasma raw material ( 21 ) is gasified by irradiation with a first energy beam ( 23 ). When the gasified raw material reaches the discharge region, pulsed power is applied between the electrodes ( 11, 12 ) and a second energy beam ( 24 ) irradiates. In this manner, the plasma is heated and excited and an EUV emission occurs. The emitted EUV emission is collected and extracted by EUV collector optics. Because of irradiation by the first and second energy beams ( 23, 24 ), a special distribution of high temperature plasma raw material density can be set to a specified distribution and demarcation of the position of the discharge channel can be set. Moreover, it is possible to lengthen pulses of extreme ultraviolet emission by supplying raw material gas of which the ion density in the discharge path is nearly the same as the ion density under EUV radiation emission conditions.

Description

200908815 IX. INSTRUCTIONS OF THE INVENTION [Technical Field] The present invention relates to an extreme ultraviolet light source device and an extreme ultraviolet light generating method for generating extreme ultraviolet light by plasma generated by discharge, and more particularly to an energy beam The ultraviolet light generated by the extreme ultraviolet light generated near the discharge electrode is vaporized by the high-temperature plasma raw material, and the extreme ultraviolet light of the extreme ultraviolet light is generated by using the plasma generated by the discharge from the vaporized high-temperature plasma raw material. Light source device and extreme ultraviolet light generation method. [Prior Art] In order to reduce the size and integration of the semiconductor integrated circuit, it is required to increase the resolution in the projection exposure apparatus for manufacturing the same. In order to achieve the short-wavelength of the light source for exposure in response to this requirement, as a next-generation semiconductor exposure light source continuous to the excimer laser device, an extreme ultraviolet light having a wavelength of 13 to 14 nm, especially a wavelength of 13.5 nm, has been developed. An extreme ultraviolet light source device (hereinafter also referred to as an EUV light source device) of light (hereinafter also referred to as EUV (Extreme Ultra Violet) light). In the EUV light source device, there are several methods for generating EUV light. One of them has a method of generating high-temperature plasma by heating excitation of EUV radiation seeds, and extracting EUV light emitted from the plasma. The EUV light source device adopting this method is roughly divided into an LPP (Laser Produced Plasma) EUV light source device and a DDP (Discharge Produced Plasma) method by means of high temperature plasma generation. The EUV light source device (200908815, for example, see Non-Patent Document 1). The LPP type EUV light source device uses EUV emission light from a high temperature plasma generated by irradiating a target such as a solid, a liquid, or a gas with a pulsed laser. On the one hand, the DDP type EUV light source device utilizes EUV radiation light from a high temperature plasma generated by current driving. In the above-described two-mode EUV light source device, as a radiation seed for emitting EUV light having a wavelength of 13.5 nm, that is, a high-temperature plasma material for EUV generation, it is known that there is a 氙 (左右) of about 1 〇. Ions, but as high-temperature plasma materials for obtaining stronger radiation intensity, lithium (Li) ions and tin (Sn) ions are valued. For example, Sn is a multiple of the E UV light radiation intensity ratio of the wavelength of 1 3 _ 5 nm for the input energy of the high temperature plasma to be several times larger than Xe. In recent years, as a method of generating high-temperature plasma, a method of irradiating a combined laser beam with a high-temperature plasma material and heating according to a large current of discharge (hereinafter also referred to as a mixing method) has been proposed. An EUV light source device using a hybrid method is described, for example, in Patent Document 1. The mixing method of the EUV light source device described in Patent Document 1 is performed by the following procedure. Fig. 4C of Patent Document 1 is an explanatory diagram of an EUV light source device using a hybrid system. In the same figure, the grounded outer electrode forms a discharge vessel. An insulator is provided inside the outer electrode, and an inner electrode on the high voltage side is provided inside the insulator. As the high-temperature plasma raw material, for example, a xenon (x e ) gas or a mixed gas of xenon (Xe) and helium (He) is used. This high temperature electricity -6- 200908815 slurry material gas is supplied from the gas path provided on the inner electrode to the discharge capacitor. An RF pre-ionization coil for pre-ionizing the high-temperature plasma raw material gas is disposed in the discharge vessel to focus the focusing lens for the laser beam. The occurrence of EUV radiation is performed as follows. First, the raw material gas introduced into the high-temperature plasma raw material in the discharge vessel is supplied to the RF pre-ionization coil by pulsed electric power, and is ready to be ionized. Thereafter, the laser beam passing through the condensing lens is condensed in a predetermined area in the discharge vessel, and the high-temperature plasma material gas is pre-ionized and thus decomposed near the laser focus. Thereafter, pulse power is applied between the outer electrode and the inner electrode to cause discharge. By the self-beaming effect of the discharge, the high-temperature plasma raw material is heated and excited to generate a high-temperature plasma, from which EUV radiation occurs. Here, near the laser focus, the conductivity is lowered by electron emission. Therefore, the position of the discharge channel in the discharge region (the space where the discharge between the electrodes occurs) is defined at the position where the laser focus is set. That is, the plasma self-bundling position is defined by the laser beam. Therefore, the positional stability of the point where EUV radiation is generated can be improved. When the EUV light source device is used as a light source for exposure, the accuracy of the pointing stability of the light-emitting point is required to be high. The hybrid EUV light source device described in Patent Document 1 is an example that can be said to meet the above requirements. Further, in recent years, it has been proposed to combine the vaporization of the irradiation of the laser beam with the heating of the high-current plasma for the high-temperature plasma raw material for EUV generation (hereinafter, also referred to as a high-temperature plasma raw material). A method of generating high-temperature plasma and generating EUV radiation from the high-temperature plasma (for example, refer to Patent No. 2,908,815, Patent Document 3, Patent Document 4, Patent Document 5, etc.). Hereinafter, this method will be referred to as a LAGDPP (Laser Assisted Gas Discharge Produced Plasma) method. In the EUV light source device of each of the above-described embodiments, as the radiation seed for emitting EU V light having a wavelength of 1 3 · 5 nm, that is, as a high-temperature plasma material, it is known that there is a 氙 (Xe) of about 1 〇. Ions, but as high-temperature plasma raw materials for obtaining stronger radiation intensity, lithium (Li) ions and tin (Sn) ions are highly valued. For example, Sri is a conversion ratio of the EUV light radiation intensity ratio of 13.5 nm for the input energy of the high temperature plasma to be several times larger than Xe. Hereinafter, the process of reaching EUV radiation in accordance with each of the above modes will be briefly described using Fig. 38. Fig. 38 is a view showing a condition of a state in which a high-temperature plasma raw material (described as an example of a fuel solid in Fig. 38) is used to satisfy an EUV radiation condition. In the same figure, the vertical axis represents the ion density (cm·3 ), and the horizontal axis represents the electron temperature (eV ). The same figure shows that when the vertical axis progresses downward, the high-temperature plasma material expands and the ion density decreases. When it progresses upward, it is compressed and the ion density increases. Further, when the horizontal axis is directed to the right direction, the high-temperature plasma material is heated to increase the electron temperature. In the LPP method, for example, a solid or liquid target such as a so-called Sn or Li high-temperature plasma raw material (shown as a fuel solid in the upper left of FIG. 8). In a solid state, a metal ion of S η or Li The density is approximately 1 022 cm·3 'and the electron temperature is below IEV), illuminating a strong laser -8-200908815 beam. The high-temperature plasma raw material that is irradiated with the laser beam is, for example, heated to a temperature of more than 300 00 eV, and is vaporized, and a high-temperature plasma is generated, and the generated high-temperature plasma is expanded, and soon after, the high-temperature electricity is generated. The ion density in the slurry is about 1〇17~1〇2%ηΓ3, and the electron temperature is about 20~3 OeV. EUV is emitted to the high-temperature plasma that achieves this state (path 1 of Figure 38). That is, in the LPP mode, the plasma generated by heating with the laser beam expands, and the plasma is sufficiently conditioned as described above (i.e., ion density 1〇17~l〇2C). Cnr3, electronic temperature is 20~30eV). On the other hand, in the DPP method, for example, a gas is placed in an internal discharge capacitor to form a gas-like high-temperature plasma material atmosphere, and discharge occurs between electrodes in the atmosphere to generate initial plasma. For example, Sn of a high-temperature plasma raw material is supplied into a discharge vessel in a gas state called SnH4, and an initial plasma is formed by discharge. The ion density of the initial plasma is, for example, about 10 cn 16 cn T 3 , and the electron temperature is, for example, about 1 eV or less, which is not sufficient as described above for the EUV radiation condition (that is, the ion density is 1〇17 to l〇2() cm_3, the electron temperature. It is 20 to 30 eV) (the initial state of the self-beam of Fig. 38). Here, the initial plasma is converged in the direction of the discharge current path by the action of the self-magnetic field of the direct current flowing between the electrodes. By this, the density of the plasma is increased, and the plasma temperature is also rapidly increased. This effect is hereinafter referred to as the self-beam effect. By the heating according to the self-beam effect, the ion density of the plasma which becomes high temperature is 1〇17~1〇2, πΓ3, and the electron temperature is about 20~20eV, and EUV is emitted from the high temperature plasma (Fig. 38, 20090815 Path 2). That is, in the D P P mode, by the generated plasma being compressed, the electric paddle is sufficiently conditioned as described above (i.e., the ion density is 1 〇 17 to 102 GcnT3 and the electron temperature is 20 to 30 eV). Further, in the LAGDPP system, a target (high-temperature plasma raw material) such as a solid or a liquid is irradiated with a laser beam to vaporize a raw material to generate a gaseous high-temperature plasma atmosphere (initial plasma). Same as DPP. The ion density of the initial electric paddle is, for example, about 10 _ 16 cm _ 3 ', and the electron temperature is, for example, about leV or less, and is not sufficient as described above for the EUV radiation condition (that is, the ion density is 1 〇 17 to 102 Gcm · 3 and the electron temperature is 20 to 30 eV. (The initial state of the self-beam in Fig. 38). Then, by the compression and heating driven by the discharge current, the ion density of the plasma which becomes high temperature is 1〇17~l〇2()cnr3, and the electron temperature reaches about 20~20eV, and EUV is emitted from the high temperature plasma. An example of LAGDPP is described in Patent Document 3, Patent Document 4, and Patent Document 5. It is described that a high-temperature electric paddle material is vaporized by laser irradiation to generate "cold plasma", and a high-temperature electric paddle is generated by a self-beam effect depending on a discharge current, and EUV is emitted from the high-temperature plasma. That is, according to the conventional example, the heating driven by the discharge current according to the LAGDPP method is the same as the DPP method, and the self-beam effect is utilized. That is, in Fig. 38, a high temperature plasma having sufficient EUV radiation conditions is formed via path 3 - path 2. In the case of the LPP method, the irradiation of the laser beam to the high-temperature plasma generated by the high-temperature plasma raw material is progressed and expanded in a short time to be cooled. Therefore, the high-temperature plasma that has reached the EUV radiation condition is cooled in a short period of time (for example, -10-200908815 10 ns), so that EUV radiation is not sufficient, and EUV radiation from the plasma is stopped. On the one hand, in the case of the DPP mode or the LAGDPP mode, the pulsed discharge current flows between the discharge electrodes as described above, and the initial plasma of the high-temperature plasma raw material is compressed and heated by the self-beam effect to reach the EUV emission condition. However, the high-temperature plasma that is converged in the direction of the discharge current path rapidly decreases in the discharge current direction in a short period of time, and the self-beam effect disappears in a short time, and the density is lowered while being cooled. . As a result, the plasma in the discharge field is such that EUV radiation conditions are not sufficient, and EUV radiation from the plasma is stopped. Moreover, the discharge between the electrodes begins with vacuum arc discharge of a wide range of laser triggers, with the supply of high temperature plasma feedstock moving to gas discharge (including self-beam discharge). Thereafter, a discharge column (plasma column) is formed, but the "discharge field" in the specification of the present invention is defined as a space including all of the discharge phenomena. Further, in the above-described discharge field, as the discharge column (plasma column) grows, the internal current density increases and the gas discharge occurs, and the discharge drive current in the discharge column flows dominantly. The spatial domain of high current density is defined as a "discharge channel." Here, the discharge channel is in the field in which the discharge drive current flows dominantly, and thus the discharge channel is also referred to as a discharge path or a discharge current path. Hereinafter, the long pulse of EUV radiation will be described. As described above, EUV radiation is pulsed in a short time. As a result of -11 - 200908815, the energy conversion efficiency is significantly reduced. When an EUV light source device is used as a light source for semiconductor exposure, the EUV light source device is required to operate at two high efficiency and high output as much as possible. If high-efficiency EUV generation conditions can be maintained for a long time, it can be a high-efficiency, high-output EUV light source. As a result, long pulsed luminescence pulse width can be expected. Patent Document 6 and Patent Document 7 disclose a method of long-pulsing EUV radiation in an EPP generator of the DPP system. Hereinafter, the conventional long pulse method will be described with reference to Figs. 3 and 4, based on Patent Documents 6, and 7. Fig. 39 and Fig. 40 are diagrams showing the relationship between (a) plasma current I, (b) plasma radius column r, (c) EUV radiation output for the elapsed time from the start of discharge, on the horizontal axis. Indicates time, while the vertical axis represents the plasma current I, the radius r of the plasma column, and the EUV radiation output. The long pulse of EUV radiation in Patent Documents 6, 7 can be realized by controlling the heating and compression engineering of the separation plasma and the maintenance work of the high temperature and high pressure state in the DPP type EUV generator. As shown in Fig. 39, in the conventional DDP method, the waveform of the plasma current I flowing inside the same plasma column formed between a pair of electrodes is increased as the elapsed time starts after the discharge starts. And the waveform that will be reduced by the peak. Hereinafter, in order to make it easy to understand, the waveform of the current I is made into a sinusoidal waveform. As the plasma current I increases, heating and compression of the plasma occurs. That is, the radius r of the plasma column that occurs is gradually decreased by the self-beaming effect with the current I of the electric paddle, and the plasma current I 値 begins to fall after the peak -12-200908815 Time becomes the smallest. In the vicinity of the peak of the waveform of the plasma current I, when the plasma temperature and the ion density reach a predetermined range (for example, as shown in Fig. 3, the electron temperature is 5 to 200 eV, and the ion density is 1 〇 17 to l 〇 2 EUV radiation occurs between periods A of ° cm_3 or so. However, the waveform peak of the electric current I is passed. Then, the current 値 decreases with the passage of time, so the self-beam effect is also weakened, causing the plasma to expand and lower the temperature of the electric paddle. The expanded plasma is capable of rapid detachment from the field of discharge with large motion energy. As a result, EUV radiation is ended. The duration of EUV radiation is, for example, only about 1 〇 ns. On the other hand, the method described in Patent Documents 6 and 7 is such that the waveform of the plasma current I flowing between the pair of electrodes is a waveform as shown in Fig. 40. That is, the waveform of the plasma current I increases with the elapsed time after the start of discharge, and is near the peak ( (for example, when the plasma is self-beamed and the EUV emission starts), and then the elapsed time Also increased. As shown in Fig. 40, the waveform of the plasma current I is formed by the heating current waveform portion (M) and the closed current waveform portion (N) which is continuous therewith. The heating current waveform (Μ) is equivalent to the timing of the waveform of the plasma current I shown in Fig. 39. In Fig. 40, for easy understanding, the heating current waveform portion (Μ) is expressed as a sinusoidal waveform. During the heating current waveform portion (Μ), the plasma current I is increased while heating and compression of the plasma occurs. That is, the radius r of the generated plasma is gradually decreased by the self-beaming effect as the flowing plasma current I', and becomes minimum when the plasma current I has passed the peak 値 and starts to fall. In the vicinity of the peak of the waveform of the current I of the plasma-13-200908815, the plasma temperature and the ion density reach the specified range (for example, as shown in Fig. 38, the electron temperature is 5 to 200 eV, and the ion density is 1〇17~ L〇2t) cm_3 or so) 'EUV radiation occurs. After the EUV radiation occurs, the waveform of the plasma current I is shifted to the closed current waveform portion (N). As described above, the plasma compressed by the self-beaming effect is intended to expand with a large motion energy. Here, if the intensity of the plasma current 1 is increased and the self-magnetic field is strongly acted on, the plasma to be expanded can be maintained in a compressed bear. The plasma pressure in the self-bundling state as described above is taken as ppp', the plasma density is taken as npp', the Boltzmann constant is taken as k, and when the plasma temperature is taken as Tpp, the plasma is self-beamed. The pressure Ppp is proportional to nppkTpp.

Ppp〇cnPpkTpp (101) On the one hand, the compression pressure PB of the self-magnetic field B produced by the plasma current I is Ρ β ^ (_1) when the magnetic permeability in the vacuum is taken as #〇' and the plasma radius is taken as 0 I / 2 7Γ Γ (102) Here, when the condition of PB ^ Ppp (103) is satisfied, the plasma is maintained in a self-bundling state. Here, the plasma in the self-bundling state becomes the plasma density npp and electricity. In the case of high temperature plasma with a high Tpp temperature, in order to establish (103), it is necessary to increase the plasma current, that is, the plasma is increased after the self-beaming, and the plasma current is increased 1 ' however, by -14-200908815 The current 値 is maintained at a constant level to maintain the self-bundling state, and the ion density is maintained within a predetermined range (the plasma radius is small, theoretically, the plasma temperature and the ion density are maintained in an in-state state (40th) In the period B) of the figure, it is continued 3 radiation, that is, long pulse of EUV radiation becomes possible. In Fig. 40, the timing at which the plasma is self-beamed and the plasma radius is taken as the slave heating current waveform portion (Μ) An example of a transition point for a closed electric (Ν). Even if there is a closed current waveform portion (the current I' of a plasma column that grows by fluid instability) with a peak current 维持 that maintains a peak value such as a heating current Μ), it is difficult to heat the high temperature plasma. The time is maintained at the compression, and the closed current waveform portion (Ν) is soon also less with time, the self-beam effect is also weakened, the electric paddle is expanded, and the plasma temperature results in the end of EUV radiation. In Patent Document 6, For example, the sustain time of the EUV output (the long pulse of the high temperature plasma maintenance time of about 30 ns. Fig. 41 is a DPP type EUV light source device for realizing the long pulse method of radiation; 〇 High-temperature plasma raw material is supplied from the raw material • The exhaust unit 16 is inside the cavity 1 of the capacitor. The high-temperature plasma raw material is the high-temperature part 1 in the cavity 1 to form the EUV radiation plasma with a discharge wavelength of 13. 5 nm. In the state of the temperature, the EUV is in a state in which the plasma of the waveform of the minimum flow waveform portion is collapsed, etc., and the decrease is reduced. The configuration example of EUV that can be made to be large t is introduced into the temperature release. Electricity The radiation source -15· 200908815 The raw material of rice is, for example, Xe or Sn vapor. The introduced high-temperature electric prize material flows into the chamber 1 and reaches the gas discharge port 17. The raw material supply and exhaust unit 16 is An exhaust means (not shown) of a vacuum pump or the like is provided, and the exhaust means is connected to the gas discharge port 17 of the chamber, that is, the high-temperature plasma raw material that reaches the gas discharge port 17 is provided with the raw material. The exhaust means of the exhaust gas supply unit 16 is discharged. In the chamber 1, an annular first main discharge electrode (cathode) 11 and a second main discharge electrode (anode) 12 are disposed via the insulating material If. The cavity 1 is composed of a first container 1d on the first main discharge electrode side formed of a conductive material, and a second container 1e on the second main discharge electrode side formed of the same conductive material. The first container Id and the second container le are separated and insulated by the insulating material 1f. The second container Id and the second main discharge electrode 12 of the chamber 1 are grounded, and a voltage of about -5 kV to -20 kV is applied from the pulse power generating portion 5 to the first container Id and the first main discharge electrode 11. . As a result, discharge occurs in the high temperature plasma generating portion 10 between the first and second discharge electrodes 11 and 1 2 in the ring shape, and high temperature plasma is generated by the self-beam effect as described above, from which the high temperature electricity is generated. The slurry produced E UV radiation at a wavelength of 1 3 · 5 nm. The EUV radiation generated is reflected by the EUV condensing mirror 2 provided on the second main discharge electrode 1 side, and is emitted from the EUV light extraction unit 7 to an irradiation unit (not shown). However, the plasma current (discharge current) waveform shown in Fig. 40 (a) is shown. It is obtained, for example, as follows. In currents with a sinusoidal waveform, -16-200908815 overlaps other currents that are not sinusoidal. That is, the current having the heating current waveform portion (Μ) overlaps the current of the pattern different from the heating current waveform portion (M) to form the closed current waveform portion (N). In order to obtain such a current waveform, the high voltage pulse generating portion 5' is connected in parallel to, for example, a discharge circuit portion having the independent switching elements S W 1 ' S W 2 as shown in Fig. 41. The pulse power generating unit 5' shown in Fig. 41 is a discharge circuit portion A1' and a capacitor C2 which are formed by a series circuit of the capacitor C1' switch SW1, and a discharge circuit portion A 2' formed by a series circuit of the switch SW2. The load (the first main discharge electrode 11' and the second main discharge electrode 12) are connected in parallel. Here, the high voltage power source CH is used to charge the capacitors C1, C2. Further, the line 圏 L1 is an inductance component indicating the parasitic inductance of the capacitor C1 and the inductance of the circuit loop formed by the composite capacitor C1, the switch SW1, and the load. Similarly, the coil L2 is an inductance component indicating the parasitic inductance of the capacitor C2 and the inductance of the circuit loop created by the load of the combined capacitor C2' switch SW2. Further, each of the diodes D!, D2 is a mode in which the electrical properties stored in the respective capacitors C1, C2 are only shifted to the load to regulate the current direction. The high voltage pulse generating unit shown in Fig. 41 operates as follows. First, the capacitors C1, C2 of the respective discharge circuits are charged via the respective diodes Di'D2 by the high-voltage power source CH. Thereafter, the first switch S W1 of the conduction/discharge circuit unit 1 is applied between the first main discharge electrode 1 and the second main discharge electrode 12 to start discharging, and the electrical properties stored in the first capacitor C1 are applied. At this time, the current flowing between the first discharge electrode 1 1 and the second discharge -17 - 200908815 electrode 12 is used for self-beaming of the plasma. That is, high temperature plasma is generated by Joule heating by the self-beam effect. This current corresponds to the heating current waveform portion (Μ) in the waveform of the 40th ( a ) diagram. Then, by the self-beam effect of the plasma, the second switch SW2 of the discharge circuit unit A2 is turned on to apply the electric property stored in the second capacitor C2 at the timing of starting the emission of the EUV light having a wavelength of 1 3 · 5 nm. Between the first main discharge electrode 1 and the second discharge electrode 2b, a current from the second capacitor C2 is added to the current flowing between the first discharge electrode 1 1 and the second discharge electrode 2b. This current is used as a current for maintaining the self-bundling state of the high-temperature high-density plasma. In the waveform of Fig. 40 (a), it corresponds to the closed current waveform portion (N). Further, the control of the first switch S W1 and the second switch S W 2 and the control of the material supply/exhaust unit 16 are performed by the main controller 26. The main controller 26 controls the control elements based on the operation command signals from the control unit 27 of the exposure machine. [Non-Patent Document 1]: "The current status and future prospects of EUV (Extreme Ultraviolet) light source for lithography", j. Plasma Fusion Res. Vol. 79. No.3, P219-260, March 2003 [Patents Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. 〇〇7_5〇546〇 [Patent Document 5]: International Publication No. 2005/101924 pamphlet [Patent Document 6]: International Publication No. 2006/120942 pamphlet -18-200908815 [Patent Document 7]: JP-A 2007- 1 [Patent Document 8] Japanese Patent Application Publication No. 2002-504746. SUMMARY OF THE INVENTION However, the configuration of the device disclosed in Patent Document 1 has the following problems. According to the above EUV light source device, the position of the discharge channel is defined by the irradiation of the laser beam. However, in order to achieve EUV emission with excellent generation efficiency, it is necessary to set the high-temperature plasma raw material (gas) distribution of the discharge channel to a predetermined spatial density distribution. That is, even if the position of the discharge channel is delimited, for example, the density distribution of the high-temperature electric paddle material (gas) of the discharge channel is not a predetermined spatial density distribution, the plasma generated by the discharge does not occur at a wavelength of 13.5 nm. EUV light. In the EUV light source device of Patent Document 1, the material gas is supplied from the gas path provided on the inner electrode to the discharge vessel. However, since it is impossible to control the air density distribution of the high-temperature plasma raw material (gas) of the discharge channel, it is not necessarily in the discharge channel, and a high-temperature plasma raw material (gas) suitable for EUV radiation can be obtained. Spatial density distribution On the one hand, in the long pulse method of EUV radiation of the above-described prior art, the long pulse of EUV radiation shown in Patent Documents 6, 7 is in the DDP type EUV generating apparatus, and the electric power is separated. The heating and compression engineering of the slurry and the maintenance of the high temperature and high pressure state can be achieved by control. -19- 200908815 That is, as shown in Fig. 4 (a), in order to maintain the self-bundling state of the plasma, the plasma current I値 after the plasma reaches the self-bundling state is compared with the conventional DDP method. It becomes a mode larger than the plasma electric current before the plasma reaches the self-bundling state, and energy must be supplied to the discharge space. After the end of EUV radiation, the energy supplied to the discharge space is converted into heat. In the DPP-type EUV generator using the conventional long-pulsation method, in order to maintain the self-bundling state of the electric hair, the flow ratio is longer than the long pulse. The general DPP method of the technology also has a large discharge current. Therefore, in such an EUV generator, the heat input to the electrode becomes larger as compared with the conventional DPP type EUV generator. Therefore, a part of the electrode is melted, evaporated, or sputtered by the heat load to become a depletion, and this depletion becomes a problem that the EUV concentrating mirror is liable to be damaged. Further, in order to maintain the self-bundling state of the electric blade, the waveform of the current I must be changed as shown in Fig. 40(a). Here, by the heating current waveform portion (Μ) of the waveform of the plasma current I shown in the 40th (a)th, the time during which the plasma is self-beamed to a high temperature state is about 1 〇ns, and in order to maintain the self-beam In the state in which the closed current waveform portion (N) of the waveform of the plasma current I is generated during this period, the plasma current I must flow. That is, the allowable error of the current flowing through the closed current waveform portion (N) for generating the current waveform is required to be approximately 1 〇 ns or less, and the synchronization timing of the operation of the switch SW 1 'SW 2 is required. High precision control. The present invention has been made in view of the above-described problems, and the first object of the present invention is to provide a position at which a discharge channel can be defined, and to appropriately set the density of a high-temperature plasma raw material (gas) of the discharge channel of the -20-200908815. EUV light source device, and EUV generation method. Further, a second object of the present invention is to provide the above-described first problem and to impart a large heat load to an electrode as is conventionally known. It does not require high-precision control, and can realize the long-pulsed extreme ultraviolet light generation method of EUV radiation and the extreme ultraviolet light source device. In the EUV light source device of the present invention, the radiation seed of the EUV light having a wavelength of 13.5 nm is released, that is, the solid or liquid Sn or Li of the raw material for the high-temperature plasma is irradiated with the first energy beam. Chemical. The vaporized high-temperature plasma raw material is centered on the normal direction of the surface of the high-temperature plasma raw material incident on the energy beam, and is expanded at a predetermined speed. Therefore, the high-temperature plasma raw material which is vaporized by the irradiation of the first energy beam and expands at a predetermined speed is an irradiation direction of the first laser beam of the raw material by appropriately setting the position of the discharge region and the material. The irradiation energy of the first energy beam or the like is supplied to the discharge field. As the energy beam, a laser beam, an ion beam, an electron beam, or the like can be employed. Here, by appropriately setting the intensity (energy) of the first energy beam and the irradiation direction, the spatial density distribution of the high-temperature plasma raw material that vaporizes in the discharge region can be set to a predetermined distribution. In one aspect, the second energy beam is illuminated at a location in the discharge region. The discharge can be started, and the position of the discharge channel is defined at the irradiation position of the second energy beam. For example, when the second energy beam is a laser beam, the position of the discharge channel can be set by concentrating the laser beam (the starting laser beam) at the position of the -21,08,08,815, discharge field. Become the laser focus at the set position. Therefore, the positional stability of the occurrence point of E U V radiation can be improved. Further, as described above, after the second energy beam is irradiated to a predetermined position in the discharge region, the discharge is started, and thus the timing of the controllable discharge is controlled by controlling the timing of the irradiation of the second energy beam. Here, by appropriately setting the irradiation timing of the first energy beam and the irradiation timing of the second energy beam, the spatial density distribution reaches at least a part of the predetermined distribution of the vaporized material in the discharge channel at the defined position. In the state of the discharge channel, the magnitude of the discharge current is equal to or higher than the lower limit of the discharge current 必需 necessary for obtaining EUV radiation of a predetermined intensity, and discharge can occur. As a result, efficient E U V radiation can be achieved. In the following, 'the timing of the irradiation of the first energy beam (source energy beam)' of the second energy beam (starting energy beam), (2) the electrode position 'the raw material supply position, the raw material energy shot The relationship between the irradiation positions of the beams' (3) The raw material is explained by the energy of the energy beam. Hereinafter, as the energy beam, a laser beam is taken as an example. (1) Timing The following describes the EUV generation method of the present invention by using a timing chart. FIGS. 1 and 2 are timing charts for explaining the EUV generation method of the present invention. FIG. 1 is a view showing the first laser. The beam is more rapidly illuminated than the second laser -22-200908815 beam, and the second figure shows the case where the first laser beam is also slowly irradiated than the second laser beam. First, as shown in FIGS. 1 and 2, a trigger signal input (time Td) is applied to a switching means (for example, an IGBT) that applies pulse power to a pulse power supply means between a pair of electrodes, and a switching means is created. Conduction state [refer to Figure 1, Figure 2 (a)].

After Atd, the voltage between the electrodes reaches the critical 値Vp (refer to the same figure (b)). The critical enthalpy Vp is a voltage 値 when the discharge current flowing when the discharge occurs is a critical value 値Ip (the description of the critical 値Ip is as described later). That is, when the discharge occurs at a critical value 値Vp, the peak of the discharge current does not reach the threshold 値Ip. Further, if the discharge still does not occur, the voltage between the electrodes reaches the maximum voltage and is maintained (the dotted line in the same figure (b)). In the timing T2 (T2 = Td + Atd ) after the timing at which the voltage between the electrodes reaches the critical 値Vp, the second laser beam (the starting laser beam) is irradiated in the discharge field (refer to the same figure (c) )]. Further, the second laser beam may be an electrode that is irradiated on one of the pair of electrodes. Hereinafter, the field of discharge is as a person who also includes an electrode surface. The radiation is started by the irradiation of the second laser beam (the laser beam for starting), and after Ati, the magnitude of the discharge current reaches the above threshold ip [refer to the same figure (d)]. The critical enthalpy Ip is the lower limit of the discharge current 所需 required for the obtained EUV emission of a predetermined intensity. Further, the period in which the discharge current is equal to or higher than the IP level of the product is Δtp. In the Atp period after the timing (Τ2 + ΔΤΠ), by the first! Ray-23-200908815 The beam of radiation (the laser beam of raw materials) is vaporized, and the spatial density distribution of the high-temperature plasma raw material expanded at a predetermined speed is at least a part of the gasification raw material of a predetermined distribution reaching the discharge field. , the first laser beam (irradiated to the raw material). When the first laser beam is irradiated at the timing of the raw material so that the spatial density distribution is at least a part of the predetermined distribution of the vaporized raw material reaching the discharge region as Atg, then (T2 + Ati-Atg)~(Τ2 + ΔΗ + Δtp-Mg ) The timing (T1) during the period, the laser beam of the raw material is irradiated (refer to the same figure (e)). Thereby, the EUV light is radiated (refer to the same figure (i)). Here, the first diagram shows an example in which the rise of the discharge current is rapid, and the second laser beam (the laser beam for starting) is irradiated after the first laser beam (the laser beam for the raw material) is irradiated. On the other hand, Fig. 2 is a view showing an example in which the discharge current is slowly increased and the first laser beam is irradiated after the second laser beam irradiation. (2) The relationship between the electrode position, the material supply position, and the irradiation position of the laser beam for the raw material. The laser beam (the laser beam for the raw material) is vaporized by the high-temperature plasma material to reach the discharge field. An example of this position is shown below. As an example, 'the case where the supply of the high-electrode electric material which is the target of the first laser beam is dropped in a droplet shape is shown. Further, the method of supplying a high material is not limited thereto. For example, it is also possible to prepare a high-temperature plasma raw material which is supplied in a line shape as will be described later. -24- 200908815 Fig. 3 is a schematic structural view for explaining the above-described positional relationship, and Fig. 3(a) is a front view showing a top view. Fig. 3(b) is a plan view. That is, '3' (b) is a diagram showing the view of the brother 3 (a) from the direction of the arrow. In the same figure, 11 is the electrode (anode) '12 is the electrode (cathode), 2 is the extreme ultraviolet concentrating mirror (hereinafter 'also known as EUV concentrating mirror), 20 is the raw material supply means, 21 is the raw material, 23 is the first thunder The beam of radiation (laser beam for raw materials). The first laser beam 23 is irradiated to the dropped high temperature plasma material 2 1 . The irradiation position is a position where the dropped high-temperature plasma raw material 2 1 reaches the vicinity of the discharge region. As an example shown in Fig. 3, a pair of plate-shaped electrodes 1 1 ' 1 2 are arranged at predetermined intervals. The discharge area is located in the space between the pair of electrodes 1 1 ' 1 2 . The high-temperature plasma raw material 21 is supplied to the space between the pair of electrodes Π' 12 and the extreme ultraviolet concentrating mirror 2 in the direction of gravity by the raw material supply means 20, and is near the discharge area. When the high-temperature plasma raw material 21 reaches the vicinity of the discharge field, the first laser beam 2 3 is irradiated to the high-temperature plasma raw material 21. The high-temperature electric paddle material vaporized by the irradiation of the first laser beam 23 is spread around the normal direction of the surface of the high-temperature plasma incident on the first laser beam 23. Therefore, when the first laser beam 2 3 is irradiated to one side of the discharge region of the surface of the high-temperature plasma raw material 2 1 supplied by the raw material supply means 20, the vaporized high-temperature plasma raw material 2 1 In the above-described EUV condensing mirror 2, the above-described EUV condensing mirror 2 is a configuration in which an oblique incident optical system in which a collecting direction is set in a direction of -25 to 200908815. In general, an EUV concentrating mirror in which a plurality of thin concave mirrors are arranged in a nested structure with high precision is used to constitute such an oblique incident optical system. The EU.V condensing mirror of such a configuration supports the plurality of thin concave mirrors described above by a support substantially conforming to the optical axis and a support extending radially from the support. In Fig. 3, the first laser beam 23 is introduced from the direction of the optical axis defined by the condensing mirror 2, and is irradiated to the high-temperature plasma material 2 1 . Therefore, if the irradiation position of the first laser beam 23 and the high-temperature plasma material position 21 are shifted, the first laser beam 23 is irradiated onto the EUV condensing mirror 2, as the case may be. The EUV condenser 2 has the possibility of damage. As described above, when the first laser beam 23 is prevented from reaching the EUV condensing lens 2 during the erroneous irradiation of the first laser beam 23, as shown in the fourth (a) and (b), The direction in which the first laser beam 23 is directed may be adjusted so as not to reach the direction of the EUV condensing mirror 2. However, as described above, the high-temperature plasma raw material vaporized by the irradiation of the first laser beam 2 3 is taken as the normal direction of the surface of the high-temperature plasma raw material incident on the first laser beam 23 Center expansion. Therefore, when the first laser beam 23 is irradiated on the side of the discharge region facing the surface of the high-temperature plasma 21, the vaporized high-temperature plasma material 2 1 is expanded toward the discharge region. Here, the irradiation of the first laser beam 2 3 is supplied to the vaporized high-temperature electric prize material 2 1 ′ in the discharge field to 'not contribute to a part of the high-temperature plasma former by discharge' or As a result of the formation of the plasma, a part of the group of the atomic gas which is decomposed is formed as a chip and is deposited as a low temperature portion in the EUV light source -26-200908815 device. For example, when the high-temperature plasma raw material is Sn, it contributes to a part of the high-temperature electricity generator, or a part of a so-called metal group of Sn, Snx which forms a decomposition of the raw gas as a result of plasma formation, and is used as a debris EUV. A tin mirror is produced by contacting the low temperature portion of the light source device. Here, as shown in FIG. 4(b), when the high-temperature plasma raw material 21 is supplied to the space side of the condensing mirror 2 that does not face the pair of electrodes 111, 1 2 by the raw material supply means, the first laser beam is emitted. The bundle 23 is such that the vaporized high-temperature plasma raw material 21' is supplied to the discharge region 'from the EUV mirror 2 side to the high-temperature electric paddle material 21. At this time, the plasma raw material vaporized by the irradiation of the first laser beam 23 is expanded toward the discharge region and the EUV condensing mirror 2, that is, by the first laser for the high-temperature plasma raw material 2 1 The beam 23 and the discharge occurring between the electrodes 11 '12' are debris for the EUV concentrating mirror. When debris accumulates in the EUV concentrating mirror 2, the EUV poly 2 decreases the reflectance at 1 3.5 nm, which degrades the EUV light source device performance. Thus, as shown in Fig. 3 and Fig. 4(a), the high temperature electric material is supplied to the space between the pair of electrodes 1,1, 2 and the E U V condensing mirror 2 in the vicinity of the discharge region. For the high-temperature plasma raw material 2 1 ' thus supplied, the first bright beam 2 3 is irradiated on the side facing the surface of the high-temperature plasma raw material as described above, and then the vaporized high-temperature plasma raw material 2 1 'It expands in the direction of discharge, but does not extend in the direction of the EU.V condenser 2. The slurry is shaped like a sub-shape, so that the concentration of light after EUV is high. The field of the discharge of the 2 illuminating mirror is -27-200908815, and the high-temperature electric paddle material 2 1 is supplied and the irradiation position of the first laser beam 23 is set as described above. The case where the debris is suppressed by the EUV condensing mirror 2 is suppressed. Here, a case is considered in which only a pair of electrodes are separated by a predetermined distance, as shown in Fig. 5 as a columnar shape. Fig. 5(a) is a plan view, and Fig. 5(b) is a front view. That is, Fig. 5(b) is a diagram showing the fifth (a) view from the direction of the arrow. At this time, even if the high-temperature plasma raw material 21 is supplied to the space on the plane perpendicular to the optical axis, and the vicinity of the discharge region, the first laser beam 23 is irradiated with the high-temperature plasma raw material from the direction perpendicular to the optical axis. 2 1. The high-temperature plasma raw material 2 1 ' after gasification does not expand in the direction of the EUV condenser 2. Therefore, the irradiation of the first laser beam 2 3 of the high-temperature plasma raw material 21 and the debris generated by the discharge occurring between the electrodes 1 Γ, 1 2' are hardly applied to the EUV condensing mirror 2 get on. Further, of course, even when a pair of electrodes separated by a predetermined distance are columnar, as shown in FIG. 3 and FIG. 4( a ), the high-temperature plasma raw material is supplied to the pair of electrodes by the raw material supply means. The space between the EU V concentrator and the space near the discharge area is also acceptable. (3) The energy of the laser beam for the raw material is irradiated from the first laser beam (the laser beam for the raw material) 23 at the timing of the raw material until at least a part of the vaporized raw material reaches the discharge region. The time Δtg ' is obtained by the distance between the radiation field and the material irradiated by the first laser beam 23, and the speed at which the vaporized material is expanded. -28- 200908815 Here, the distance between the discharge field and the raw material irradiated by the first laser beam is dependent on the discharge area of the first laser beam 23 and the position of the raw material 21 and the raw material. The irradiation direction of the first laser beam 23 of 21 is, on the one hand, the high-temperature plasma material 2 Γ 'which is vaporized by the irradiation of the first laser beam 23 as described above is the first laser beam The normal direction of the surface of the incident electric power paddle material is the center, and the "speed determined as described above" is expanded at a predetermined speed depending on the irradiation energy of the first laser beam 2 3 irradiated on the material 2 1 . As a result, the time from the timing at which the first laser beam 2 3 is irradiated to the raw material to the time when the spatial density distribution is a portion of the vaporized raw material having a predetermined distribution reaching the discharge region Δ tg ' depends on the discharge region and the raw material 2 The position 'kf of 1' is in the irradiation direction of the first laser beam 2 3 of the material 2 1 , and the irradiation energy of the first laser beam 2 3 is limited to a predetermined time by appropriately setting these parameters. Further, by appropriately setting these parameters, the spatial density distribution of the vaporized high-temperature plasma raw material can be set to a predetermined distribution. When the first laser beam (the laser beam for raw material) 23 is irradiated onto the raw material and vaporized, the irradiation conditions and the discharge current of the first laser beam are appropriately selected. The above long pulse can be performed. That is, in order to maintain the compression state of the plasma according to the self-beam effect, it is not necessary to flow a large current in the discharge field, and sufficient EUV radiation conditions as described above are maintained (that is, the ion density is 1〇i7~1〇2〇cm· 3, high-temperature plasma with an electron temperature of about 20 to 3 OeV, and long pulse of EUV radiation can be realized. -29-200908815 The high-temperature plasma generation of the DPP method of the present invention will be described using FIG. In addition, the vertical axis and the horizontal axis of Fig. 6 are high-temperature plasma raw materials which are disposed in a solid or liquid outside the discharge region as in the case of Fig. 3 (in the sixth drawing, a fuel solid is described as an example). Irradiation energy beam. As an energy beam, for example, a laser beam is used. Hereinafter, a laser beam will be described as an example. A solid or liquid high-temperature plasma material that is irradiated with a laser beam is heated and vaporized to reach a discharge channel formed in advance in the discharge field. Here, the vaporized high-temperature electric paddle material is a low-temperature plasma gas having an ion density of about 1 〇 17 to 1 ) 2 t) cm_3 in the plasma when it reaches the discharge field, and an electron temperature of about 1 eV or less. The way, the irradiation energy of the laser beam is set appropriately. That is, by irradiating the laser beam to the high-temperature plasma material, the ion density in the electric paddle is sufficient EUV radiation condition, but the electron temperature is low temperature, forming a low-temperature plasma gas [path of Fig. 6 (I )]. The low temperature plasma is supplied to a discharge path previously formed in a discharge region between electrodes, and the low temperature plasma is heated by a discharge current. Here, regarding the ion density of the low-temperature plasma gas, the EUV radiation condition is sufficient, and thus the compression effect of the self-beam effect of the conventional D P P method is small. That is, the current flowing between the electrodes mainly contributes only to the heating of the low temperature plasma. By heating, the electron temperature of the plasma reaches 20 to 30 eV, and from the high-temperature plasma that becomes the EUV radiation condition, the EUV is emitted [path of the 6th-30-200908815 diagram (I丨)^ here, by The above-mentioned low-temperature plasma gas 'continuously supplied to the discharge channel which is opened/formed between the electrodes in advance, becomes a long pulse which can realize EUV radiation. Hereinafter, the long pulse method will be described using Figs. 7 and 8. Further, Fig. 7 is a view showing a multi-self-bundling method, and Fig. 8 is a view showing a non-self-bundling method. Fig. 7 is a view showing a plasma current, a low-temperature plasma radius, and EUV radiation when the multi-self-bundling method is described. Power is supplied between the electrodes, and at the timing of t = to (by applying a trigger), vacuum discharge is started to cause the current to start flowing, forming an effective electric path (discharge current path) (Fig. 7 (a)). At the timing tp at which the current I reaches the critical threshold pIp described below, the cross-sectional dimension of the discharge channel is thinned by the influence of the self-magnetic field of the current. On the one hand, at the timing tp described above, the high-temperature plasma raw material (i.e., the low-temperature plasma gas corresponding to the ion density of the EUV radiation condition and the low electron temperature) of the laser beam that is irradiated and vaporized is selectively reached. A fine discharge channel to the discharge field. Here, the critical value 电流ip of the current is set as Pb according to the compression pressure of the self-magnetic field of the current, and the pressure of the plasma is set as pP.

Pb» Pp (104). That is, by the self-magnetic field, a current 可 which can sufficiently compress the low-temperature plasma gas is formed. Further, the above-mentioned critical enthalpy Ip is also an electron temperature which can be used for a low-temperature electric propeller gas (the ion density in the electric-31 - 200908815 paddle is about 1 〜 17 to l 〇 2 (cm_3), and the electron temperature is about leV or less). The current 加热 is heated to 20 to 3 OeV or more. As described above, the low temperature plasma selectively supplied to the above fine discharge passage is formed by irradiating a laser beam to a solid or liquid high temperature plasma material. The irradiation conditions of the laser beam are appropriately set depending on the distance from the high-temperature plasma material disposed outside the discharge field to the discharge area. The irradiation energy is an energy that vaporizes a solid or liquid high-temperature plasma raw material, but does not excessively raise the electron temperature (※ as shown in Fig. 6, the electron temperature of the laser is slightly increased) For example, a range of 105 W/cm 2 to 10 16 W/cm 2 . By irradiating such a laser beam to a solid or liquid high-temperature plasma raw material, a high-temperature plasma raw material (low plasma gas) having an ion density equivalent to an EUV radiation condition and a low electron temperature can be obtained. It is continuously supplied between the electrodes during a period of about 1 〇μ5. In general, the conventional DPP method and the discharge duration of the LAGDPP method are around 2 μ3. That is, compared with the conventional discharge duration, the above-mentioned supply of the low-temperature plasma gas can be regarded as a stable continuous supply, and the low-temperature plasma selectively reaches the above-mentioned fine discharge channel, and the Ray is appropriately adjusted. Conditions such as the irradiation conditions of the beam, the arrangement of the high-temperature plasma material, and the like. By such adjustment, the vaporized high-temperature electric paddle material (low-temperature plasma gas) having good directionality flows, and the flow is set to be concentrated in the vicinity of the fine discharge passage. With such a configuration, the low-temperature plasma gas selectivity -32 - 200908815 is continuously supplied to the fine discharge channel. Further, when a solid or liquid high-temperature plasma raw material is placed, the energy of the discharge directly acts on the high-temperature plasma to change the conditions of the vaporized high-temperature plasma raw material. Therefore, the low density of the electron density without the EUV radiation condition and the low temperature of the electron temperature are selectively supplied continuously to the fine discharge channel. The low-temperature plasma gas supplied to the fine discharge channel is a self-beam effect of the above-mentioned current or a high-temperature plasma according to the heat of the self-magnetic field, and is radiated from the high-temperature electric paddle, EUV radiation It is through the (II) of Fig. 6, so that the compression effect according to the self-beam effect is smaller and the ratio of the closing effect to the heating engineering by the Joule heating is not the conventional DPP method. The LAGDPP method can also be EUV in the field of discharge with a small current flow. Even if a high-speed short pulse without discharging current can be efficiently input (ie, heating), the electric charge can be discharged. The current pulse is set to be longer and the compressed high temperature plasma is detached from the axial direction of the extruded electrical channel immediately after the plasma density gradient along the axis of the discharge channel. At the same time, the discharge channel is the result of the diameter, which causes the plasma density and electron temperature drop inside the discharge channel. At this time, it is known that EUV radiation is terminated. However, as described above, there is a steady flow of gas around the discharge channel, so that the electric charge in the discharge channel is in the discharge field, and the time method will be equivalent. The plasma gas is selected according to the critical 値I p combined effect is added EUV. The path is actually increased by the self-magnetic field rate. Also high current, radiation. Also, it has become. Therefore, the maximum compression of the enthalpy is mainly extended in the direction of the discharge, and the space of the low temperature plasma density drops rapidly from -33 to 200908815, and the low temperature plasma is supplied without time difference. Therefore, during the period in which the diameter of the discharge channel is not too expanded, the discharge channel is further tapered by the self-beam effect or the closing effect of the self-magnetic field, and the low-temperature plasma gas is heated to continue the EUV radiation as described above. Clause 7 (b), (c)]. The repetition of the self-beaming effect or the closing effect of the self-magnetic field is that the duration of the discharge current continues. Further, as described above, in the present invention, the high-speed short-pulse of the current is not required, so that the discharge current pulse can be set longer than the conventional one. That is, the self-beaming effect or the repetition of the closing effect of the self-magnetic field can be continuously maintained for a long period of time, so that long pulse of EUV radiation can be achieved. Further, hereinafter, the present invention utilizing the continuous self-beaming effect is referred to as a multi-self-beam method. D The D P P method using a conventional self-beam effect is a high-temperature plasma raw material gas having a low ion density supplied to the discharge field. (The initial state of the self-beam in Fig. 6). The low-density gas is filled in the same manner as the entire discharge vessel (discharge field). In the low-density gas atmosphere, the discharge channel of the initial plasma generated by the discharge is thicker to the diameter of the discharge vessel in the initial state, so that the discharge channel is thinned by the self-beam effect, and the initial stage is used. The plasma is made into a high-temperature plasma and becomes a current pulse requiring high power. Further, in order to improve the energy input efficiency of the discharge to the plasma, it is necessary to perform high-speed short-pulse of the discharge current. Therefore, the E U V emission ends with the self-beaming effect of the 丨, and the pulse width of the EUV radiation is about 200 ns. (Path 2 of Figure 38). In addition, in the conventional DPP method, the first self-beam is terminated, and in the field where the plasma density inside the electric channel is lowered, the low-density gas (high-temperature plasma raw material) is invaded. Therefore, it is thick and returns to the diameter of the initial state of the first self-beaming effect. Therefore, if multiple self-beams are applied, a large current is required for the first time. In fact, as described above, the discharge pulse is so long that the second self-beam cannot be performed after the end of the first self-beam. In the LAGDPP method, even if the path 3 from the beam effect map is used, EUV radiation occurs via the path 2. Laser irradiation of high-temperature plasma raw materials, low-density high temperature supply to the field of discharge. In the same manner as in the case of the DDP method, the initial electric paddle is generated by discharge at a low density, and the high-speed plasma is required to generate a high-rate current pulse current. Therefore, the EUV release effect is over. Further, as described in Patent Document 5, after the high-temperature plasma raw material gas irradiated by the LAGDPP laser beam is released, the high-temperature electricity that is heated and desorbed from the discharge region is large, and there is no efficiency. That is, in the conventional DPP method, LAGDPP is a long pulse of EUV radiation, such as Patent Document 6 or a special field, a separate plasma heating and compression engineering and compression maintenance system, after the plasma reaches the self-bundling state. The plasma current has a discharge channel in the discharge vessel which is a self-beam of the discharge path. The current is a short time of the tube speed, which becomes I, after the third 8th, that is, by the gas atmosphere of the plasma material. The initial plasma, in addition, must be shot in the first-time self-mode, using the discharge of the raw material gas in the process of the discharge, in order to control the project described in the document 7, the plasma to -35- 200908815 A method of supplying electric energy to the discharge space by the electric paddle current before the self-bundling state. However, when the self-magnetic field pressure of the current is taken as pP, if the current 的Pb ^ Pp (105) 値Ip2 is used, even if the current is self-pulping gas (maintained at the level of the low-temperature plasma gas) It is also possible to realize the above-mentioned critical 値Ιρ2, which is a current 可 which can be heated by an electron temperature of an ion density of 1017 to 102 (Cm or less). Fig. 8 is a diagram showing the timing of the self-beaming method and the EUV emission, and the following formula. Electric power is supplied between the electrodes, and in the timing tp at which the current starts to flow [Fig. 8 (a)] Ip2, the influence of the breaking magnetic field of the discharge channel becomes thin. Again, the comparison makes the critical 値IP and the above critical 値I p 2,  The cross-sectional dimension of the discharge channel is the same as that of the above-mentioned timing tp, and the low-temperature plasma gas corresponding to the EUV radiation condition is selectively made to reach a large size, and the compression pressure that has to be used is taken as PB. The setting of the boundary is a long pulse that my magnetic field weakly compresses the expansion of the low temperature electric power without reducing the ion density EUV radiation. There is a plasma current that is a low-temperature plasma gas (electrical gas, electron temperature is leV 20~30eV or more, and low-temperature plasma half is used to illustrate the timing of non-self-beam t = to When the current I reaches the critical plane dimension, the current when the self-use multi-self-beam effect of the current is Ip 1 > Ip2 is large, so that the multi-self-beam effect is large. The fine discharge in the field of flow discharge with low ion temperature and low electron temperature is -36-200908815. Further, as described above, the low-temperature plasma gas is selectively supplied continuously to the fine discharge channel. It is supplied to the fine discharge channel. The low-temperature plasma gas is hardly compressed by a current of a threshold 値Ip2 or more, and is heated to a high-temperature plasma in a state where the low-temperature plasma gas expands and the ion density is maintained without being reduced. EUV is emitted from the high-temperature plasma. That is, the ion density of the low-temperature plasma is such that the EUV radiation condition is satisfied at the beginning, and thus heating is performed while maintaining the ion concentration while being realized. UV radiation [(II) path of Fig. 6] Therefore, unlike the conventional DPP method, the LAGDDP method has a large current, and a small current flow in the discharge field also enables EUV radiation. It is known that the high-speed moment pulsing of the discharge current is not performed, and energy can be efficiently input (that is, heated) to the plasma. Therefore, it is possible to set the discharge current pulse to be longer than the conventional one. Here, there is a steady flow of low-temperature plasma gas around the discharge channel, so that a low-temperature plasma gas having a predetermined ion density is stably supplied in the discharge channel. Therefore, the discharge current continues during the discharge channel. Heating by the low-temperature plasma gas is maintained, and EUV radiation is continued. [Fig. 8(b)(c)]. In this case, the high-speed moment pulse of the current is also not required, so that the discharge current can be pulsed. Compared with the conventional one, the setting is long, and the heating of the low-temperature plasma gas and the generation of the high-temperature plasma can be maintained continuously for a long period of time, so that the long pulse of the EUV radiation can be realized. The critical 値Ip2 of the current is made to compress the low-temperature plasma gas (maintained at a low temperature of the low-temperature electric propeller gas and the ion density is reduced) by the self-magnetic field -37-200908815, so the low-temperature plasma is It is heated so as not to shrink in appearance, and becomes a high-temperature plasma. Therefore, this mode is hereinafter referred to as a non-self-bundling method. Here, whether or not the multi-self-beam method or the non-self-beam method described above is a driving current 値The same is determined by the size of the discharge channel. If the shape of the discharge electrode is selected, the beam diameter of the irradiated laser light, etc., the discharge channel becomes a multi-self-bundling method, and the discharge channel becomes thicker. In the non-self-bundling method, the diameter of the discharge channel is larger than that of the multi-self-beam method, and the size of the high-temperature plasma is also larger than that of the multi-beam method. That is, since the size of the EUV radiation source is larger than that of the multi-self beam method, when the present invention is applied to an EUV light source device for exposure, an EUV source can be used in a multi-self-beam method than a non-self-beam method. The size is made smaller and is therefore preferred. When the EUV light is extracted by the multi-beam method, the equivalent energy conversion efficiency is roughly compared when the same EUV output is taken out from the beam at a time, and the peak-to-peak power input of the primary beam is reduced. Therefore, it is possible to suppress the peak power input of the counter electrode, and it is possible to reduce the occurrence of debris due to sputtering of the electrode. Also, the number of ions that contribute to EUV luminescence at one time is small. Therefore, the size of the light can be reduced, which is advantageous in the design of the exposure optical system. As described above, in the present invention, the long pulse of EUV radiation is achieved as follows. (i) A fine discharge channel is generated in advance in the discharge field. -38- 200908815 (ii) In the field of discharge, the energy beam is irradiated to a solid or liquid high-temperature plasma raw material to be vaporized to form a low-temperature plasma having an ion density equivalent to EUV radiation conditions and a low electron temperature. Gas (fuel vapor in Fig. 6: ion density is about 1017~102 () cm·3, and electron temperature is about leV or less). (iii) after that, when the discharge current 値 reaches a predetermined threshold I (Ip or IP2), the low-temperature plasma gas reaches the fine discharge channel, and the low-temperature plasma gas is selectively supplied to the fine discharge channel. Steady flow. As a result, the discharge of the low temperature plasma causes the temperature of the electron to rise. By the path 141 of Fig. 6, a high temperature plasma which satisfies the EUV radiation condition is formed to generate EUV radiation. (iv) Here, the low-temperature plasma gas is supplied to the discharge channel formed in advance, so that the discharge current pulse does not require a large current, and the high-speed short pulse 'is made the current pulse slower than the conventional current pulse. Long pulses are also available. EUV radiation is a period in which the fine discharge channel continues for a certain period of time. Therefore, the discharge current pulse is longer than the conventional DPP method and the LAGDPP method is formed, and the discharge current pulse is grown and pulsed, whereby the duration of the fine discharge channel can be compared with the conventional one. Long, the result is a long pulsed 〇 (V) of EUV radiation. As a multi-self-bundling method, when the critical 値 of the current is set to Ip, the diameter of the fine discharge channel is maintained during the time when the discharge current pulse continues. In the state where the relativeness of the pulsator is fine, the self-beam of the low-temperature plasma is repeated, and EUV radiation occurs. -39- 200908815 In addition, when the threshold 値 of the current is set to Ip2 as the non-self-bundling method, the diameter of the fine discharge channel is kept thicker than that in the multi-self-beam mode during the time when the discharge current pulse continues. In a relatively thin state, the heating of the low-temperature plasma is continued, and the plasma temperature and density necessary for EUV radiation are maintained, and EUV radiation occurs. Further, in the non-self-bundling method, as described above, the diameter of the discharge channel is larger than that of the multi-self-beam method, and thus the size of the high-temperature plasma is larger than that of the multi-self-beam-P--L- speed. Based on the above, in the present invention, the above problems are solved as follows. (1) An extreme ultraviolet light source device comprising: a raw material supply means for supplying a liquid or solid raw material; and a first energy beam irradiation means for irradiating the first energy beam to the raw material to vaporize the raw material And a pair of electrodes of the above-mentioned raw materials to be vaporized, which are heated and excited in the above-mentioned container to generate high-temperature plasma, and a pulse electric power supply means for supplying pulsed electric power to the electrodes; a collecting optical means for collecting the extreme ultraviolet light emitted from the high-temperature plasma generated in the discharge region of the discharge of the pair of electrodes, and extracting the extreme ultraviolet light of the concentrated ultraviolet light The take-out portion is characterized in that: the second energy beam is irradiated between the electrodes to which the electric power is applied, the discharge is started in the discharge region, and the discharge path is defined at a predetermined position in the discharge region. Beam irradiation means. The first energy beam irradiation means is a space other than the discharge area, and the first energy beam is irradiated to the material which is supplied to the space in the dischargeable region by the vaporized material. -40 - 200908815 (2) An extreme ultraviolet light source device comprising: a raw material supply means for supplying a liquid or solid raw material into the container; and irradiating the first energy beam to the raw material to vaporize the raw material The first energy beam irradiation means' and the pair of electrodes which are to be vaporized and which are heated and excited in the container to be heated and excited to generate a high temperature plasma, and which are separated by a predetermined distance, and 1 μ 3 or more a pulse power supply means for supplying pulse power to the electrodes; and a collecting optical means for collecting the extreme ultraviolet light emitted from the high-temperature plasma generated in the discharge region of the discharge of the pair of electrodes The extreme ultraviolet light extracting portion of the condensed extreme ultraviolet light is characterized in that: a discharge is started in the discharge region by irradiating a second energy beam between electrodes to which electric power is applied, and the discharge path is set A second energy beam irradiation means that defines a predetermined position in the discharge area. In the first energy beam means, the first energy beam is irradiated to the space 'out of the space in which the vaporized material can reach the discharge path', and the discharge path is defined in the space outside the discharge path. The material gas having an ion density approximately equal to the ion density of the extreme ultraviolet radiation condition is supplied to the above-described discharge path after the above electrodes. (3) In the above (丨), (2), the first energy beam irradiation means and the second energy beam irradiation means are at least a part of the vaporized raw material having a spatial density distribution of a predetermined distribution reaching the discharge field At the timing, the discharge current of the discharge generated in the discharge region is set to a predetermined threshold or more. The operation timing is set. (4) In the above (丨) (2) (3), the raw material supply by the raw material supply means is carried out by dropping the raw material into droplets by dropping -41 - 200908815 in the direction of gravity. (5) In the above (1), (2), (3), the raw material supply by the raw material supply means is carried out by continuously moving the above-mentioned raw material into a linear raw material and moving the linear raw material. (6) In the above (1), (2), (3), the raw material supply means is provided with a raw material supply disk, and the raw material supply means supplies the raw material as a liquid raw material 'the raw material is supplied to the raw material The supply disk 'rotates the supply of the raw material supply disk of the above-mentioned liquid raw material, and moves the supply portion of the liquid raw material of the raw material supply disk to the irradiation position of the energy beam. (7) In the above (1), (2), (3), the raw material supply means is provided with a capillary "material supply by a raw material supply means, and the raw material is used as a liquid raw material, and the liquid raw material is supplied to the liquid via the capillary. The irradiation position of the energy beam is performed. (8) In the above (1), (2) (3), a tubular nozzle is provided at an energy beam irradiation position of the raw material, and at least a part of the raw material vaporized by the irradiation of the energy beam is ejected by the tubular nozzle . (9) In the above (8), a narrow portion is provided in a part of the inside of the tubular nozzle. (10) In the above (1) (2) (3) (4) (5) (6) (7) (8), it is provided that the discharge direction is substantially the same as that in the discharge field. A magnetic field applying means that applies a magnetic field in parallel. (11) In the above (1) (2) (3) (4) (5) (6) (7) (8) (9) (1), the pair of electrodes are disc-shaped electrodes, and - 42- 200908815 The position at which the discharge is driven to the surface of the electrode changes. (12) In the above (11), the pair of disc-shaped electrodes ' are arranged such that the edge portions of the peripheral portions of the two electrodes face each other with a predetermined distance therebetween. (13) In the above (1) (2) (3) (4) (5) (6) (7) (8) ( 9 ) ( 1 〇) ( 1 1 ) ( 1 2 ), as the energy beam Use a laser beam. (1) A method for generating an extreme ultraviolet light by irradiating a first energy beam with a raw material of a liquid or solid for radiating extreme ultraviolet light in a container including a pair of electrodes therein to vaporize Deriving the discharge of a pair of electrodes by @i to heat the gasification of the above-mentioned raw material 'the formation of high-temperature plasma and extreme ultraviolet light generating extreme ultraviolet light generation' is characterized in that the first energy beam is in addition to the above discharge The space outside the field is irradiated to the raw material supplied to the @ between the dischargeable fields, and the second energy S beam irradiated to the discharge region is applied to the pair of electrodes. The discharge is started in the discharge region of the discharge and the discharge path is defined at a predetermined position in the discharge region. (1 5 ) A method for generating an extreme ultraviolet light by irradiating a first liquid beam of a liquid or solid material for radiating extreme ultraviolet light in a container including a pair of electrodes therein to vaporize And an extreme ultraviolet light generating method for generating an ultraviolet light by exciting the gasified material by the discharge of the pair of electrodes to generate a high-temperature plasma, wherein the first energy beam is in addition to the above The space outside the discharge area is irradiated to the raw material supplied to the space in the dischargeable area - 43-200908815, and the second energy beam irradiated in the discharge area is in the above The discharge region is discharged in the discharge region of the electrode, and a discharge path is defined at a predetermined position in the discharge region. After the discharge path is defined between the electrodes, the ion density is approximately the same by the first energy beam. a material gas equal to the ion density of the extreme ultraviolet radiation condition is supplied to the above discharge path, and the raw material gas is heated to satisfy the extreme ultraviolet ray by discharge Radiation temperature conditions, the more extreme ultraviolet 200ns occur continuously. (16) In the above (15), the spatial density distribution is such that at least a part of the vaporized raw material of a predetermined distribution reaches a discharge region, and a discharge current of a discharge generated in the discharge region is set to a predetermined threshold or more. The method of setting the irradiation timing of the first energy beam and the second energy beam is set. (1 7) In the above (16), the time data of the timing of starting the discharge and the time data of the timing at which the discharge current reaches the predetermined threshold 取得 are obtained, and the first energy beam and the second energy beam are corrected based on the two time data. The timing of the irradiation. (1) In the above (1 6 ) (丨7), the ith energy beam is irradiated once or more before the irradiation of the first energy beam and the second energy beam set at the irradiation timing. . In the present invention, the following effects can be obtained. (1) By appropriately setting the intensity of the first energy beam and the irradiation direction, the spatial density distribution of the high-temperature plasma material vaporized in the discharge region can be set to a predetermined distribution. Further, by irradiating the second energy beam at a predetermined position in the discharge region, the position of the discharge channel can be defined, and the positional stability of the EUV radiation can be improved. Further, by controlling the timing of the irradiation of the second energy beam, it is possible to control the timing at which the discharge is started. (2) by the irradiation of the first energy beam, the spatial density distribution reaches at least a part of the vaporized raw material of a predetermined distribution reaching the discharge region, and the discharge current of the discharge generated in the discharge region becomes a predetermined threshold or more. At the timing, the second energy beam is irradiated, and the irradiation timing of the first energy beam and the second energy beam is set, and efficient EUV radiation is possible. (3) In the field of discharge, by providing a magnetic field applying means for applying a magnetic field substantially parallel to the discharge direction generated between the pair of electrodes, the size of the high-temperature plasma that emits EUV can be reduced, and the emission time of the EUV is increased. may. (4) A pair of electrodes is formed as a disk-shaped electrode, and by rotating the drive so that the discharge occurrence position of the electrode surface can be changed, the wear rate of the electrode is eliminated, and the life of the electrode can be extended. (5) Obtaining the time data of the timing of the start of discharge and the time data of the timing at which the discharge current reaches the predetermined threshold ,, and correcting the timing of the irradiation of the first energy beam and the second energy beam based on the two time data, Efficient EUV radiation is achieved. (6) Before the irradiation of the first energy beam and the second energy beam with the irradiation timing set, the first energy beam is irradiated to the raw material once or more, and discharge is likely to occur between the discharge electrodes. The expected timing -45-200908815 can be reliably discharged. (7) Forming a fine discharge channel in advance in the discharge field, and selectively supplying a stable flow corresponding to the ion density of the EUV release member and the low temperature electron temperature to the fine discharge channel to discharge the low temperature In the case of EUV radiation, the electric current does not require the conventional DPP method, and the flow of the LAGDPP method makes it possible to conduct radiation even if a small current flows in the discharge field. Further, as is conventionally known, the high-speed short pulse of the discharge current is not performed so that energy can be efficiently input to the plasma. Therefore, it is possible to set the current pulse to be longer than the conventional one. Further, the discharge current pulse forms a discharge circuit in a manner that is longer than the conventional DPP method and LAGDPP, and the discharge current pulse is made into a pulse, so that the duration of the fine discharge channel can be made longer than conventionally. As a result, Long pulsed EUV radiation can be achieved. For example, if the duration of the discharge channel is at least 1 or more, the time during which the discharge channel continues can be surely made to be more than 200 ns. If the continuation of the discharge channel is set to 1 or more, the continuation time of EUV emission is obtained. The conventional EUV emission continues for 200 ns) and it is made for a long time. (8) In the long pulse, the discharge current does not need to be in a conventional manner, and the large current of the LAGDPP mode does not require the discharge current to be pulsed. Therefore, the heat load to be applied to the electrode is made smaller than conventionally, and the occurrence of debris can be suppressed. The field is shot, and the EUV is discharged, and the discharge mode is also long. It is possible to maintain the self-bundling state of high-temperature plasma as long as the high-frequency DPP is compared to -46-200908815 (9), so it is not necessary to control the plasma current waveform. A large current flows in the discharge space. Further, in order to maintain the self-beam effect, it is not necessary to change the waveform of the plasma current, and thus high-precision synchronous control or current control is not required. (1 〇) The energy beam for fixing the discharge path is irradiated. The discharge path (discharge channel) is used to fix the radiation path by the energy beam, thereby improving the positional stability of the point where the EUV radiation occurs. [Embodiment] 1 . (Embodiment) Fig. 9 and Fig. 10 show the configuration (cross-sectional view) of an extreme ultraviolet (EUV) light source device according to an embodiment of the present invention. Fig. 9 is a front view showing the EUV light source device of the present embodiment, and EUV radiation is taken out from the left side of the same figure. Fig. 10 is a plan view showing the EUV light source device of the present embodiment. The EUV light source device shown in Figs. 9 and 10 is a cavity 1 having a discharge vessel. The chamber 1 is divided into two large spaces via a partition wall 1c having an opening. A discharge unit is disposed in one of the spaces. The discharge portion is a heating excitation means for exciting the high-temperature plasma raw material containing the EUV radiation seed. The discharge portion is constituted by a pair of electrodes 1, 1, 1 2 and the like. In the other space, the EUV light emitted by the high-temperature plasma generated by the concentrating high-temperature plasma material is heated and excited, and is set in the cavity! The EUV take-out portion 7 is guided to the EUV condensing mirror 2 of the illuminating optical-47-200908815 system of the exposure apparatus (not shown), and the debris generated by the result of suppressing the plasma generated by the discharge is moved toward the concentrating portion of the EUV light. Debris collector. In the present embodiment, as shown in Figs. 9 and 10, the debris collector is constituted by the air curtain 13b and the wheel type collector 3. Hereinafter, the space in which the discharge portion is disposed is referred to as a discharge space 1 a, and the space in which the E U V condensing mirror is disposed is referred to as a condensed space i b . The vacuum exhaust unit 4 is connected to the discharge space 1a, and the vacuum exhaust unit 5 is connected to the condensing space lb. Further, the wheel type collector 3 is held in the condensing space 1b of the chamber 1 by, for example, the wheel type collector holding partition wall 3a. That is, in the example shown in Fig. 9, Fig. 10, the concentrating space lb is divided into two spaces by the wheel type collector holding partition wall 3a, and in Fig. 9, In Fig. 10, the discharge portion is shown to be larger than the EUV concentrating portion, but for the sake of easy understanding, the actual size relationship is not as shown in Fig. 9, which is shown in Fig. 10. In fact, the EUV concentrating unit is also more than the discharge unit. That is, the condensing space 1 b is larger than the discharge space 1 a. Hereinafter, each unit of the EUV light source device of the present embodiment and its operation will be described. (1) Discharge section The discharge section is composed of a first discharge electrode 11 made of a metal disk-shaped member and a second discharge electrode 12 of a disk-shaped member of the same metal. The first and second discharge electrodes 1 1,1 2 are made of a high-melting point metal such as tungsten, molybdenum or tantalum, and are disposed to face each other only at a predetermined distance. Here, at -48 to 200908815, one of the two electrodes 11, 12 is a ground side electrode, and the other is a high voltage side electrode. The surfaces of the two electrodes 11, 12 may be arranged on the same plane. However, as shown in Fig. 1, the discharge is likely to occur. When the electric power is applied, the edge portion of the peripheral portion where the electric field is concentrated is only separated. It is preferable that the distances are arranged to face each other. That is, it is preferable that the electrodes are arranged so that the imaginary planes including the surfaces of the electrodes intersect. Further, the predetermined distance is the distance at which the distance between the edge portions of the peripheral portion of the two electrodes is the shortest portion. As described below, when pulse power is applied to the electrodes 11 and 12 by the pulse power supply means, discharge occurs at the edge portion of the peripheral portion. In general, a large amount of discharge occurs in the shortest portion between the edge portions of the peripheral portions of the two electrodes 1 1,1 2 . It is assumed that the case where the surfaces of the two electrodes 11, 12 are disposed on the same plane is considered. At this time, the predetermined distance is the distance at which the distance between the side faces of the electrodes becomes the shortest portion. At this time, the position at which the discharge occurs is an imaginary contact line formed when the side surface of the disk-shaped electrode is in contact with the imaginary plane perpendicular to the side surface. The discharge can occur anywhere on the imaginary contact line of each electrode. Therefore, when the surfaces of the two electrodes are arranged on the same plane, the effective electric position is unstable. On the other hand, as shown in Fig. 10, the edge portions of the peripheral edge portions of the respective electrodes 1 1, 1 2 are disposed to face each other with only a predetermined distance therebetween. As described above, the shortest distance between the edge portions of the peripheral portions of the two electrodes 11, 12 causes a large amount of discharge, thereby stabilizing the discharge position. Hereinafter, a space in which discharge between two electrodes occurs is referred to as a discharge region. -49- 200908815 As described above, the edge portions of the peripheral edge portions of the respective electrodes 1 1, 1 2 are arranged to face each other only at a predetermined distance. When viewed from above as shown in Fig. 10, the first and second sides are included. The position at which the hypothetical plane of the surface of the second discharge electrode intersects is the center. The two electrodes are arranged radially. In the tenth diagram, the longest portion of the edge portion of the peripheral portion of the two electrodes arranged radially is the opposite side of the EUV condensing mirror described below when the intersection of the assumed planes is the center. Here, the longest portion between the edge portions of the peripheral portions of the two electrodes 1 1, 1 2 which are radially arranged may be disposed on the same side as the EUV condensing mirror 2 when the intersection of the assumed planes is the center. However, in this case, the distance between the discharge field and the EUV concentrating mirror 2 becomes long, and this component also reduces the EUV concentrating efficiency without being practical. The EUV light source device of the hybrid type of the present embodiment is a high-temperature electric paddle generated by a high-temperature plasma vaporized by irradiation of a first laser beam (field laser beam) by a discharge current. EUV radiation light. The heating excitation means for the high-temperature plasma raw material is a large current due to discharge occurring between a pair of electrodes 11.1. Therefore, the electrodes 1 1,1 2 are subjected to a large thermal load accompanied by discharge. Further, since the high temperature plasma is generated in the vicinity of the discharge electrode, the electrodes 11, 12 are also subjected to a thermal load from the plasma. With this thermal load, the electrodes are slowly worn away to cause metal debris. When the EUV light source device is a light source device as an exposure device, EUV radiation emitted from the high temperature plasma is collected by the EUV condensing mirror 2, and the concentrated EUV radiation is emitted to the exposure device side. The metal scrap -50- 200908815 is the EUV light reflectance which deteriorates the E U V condensing mirror 2 while degrading the e u V condensing mirror 2. Further, the electrode Π, 12 is slowly worn, and the shape of the electrode is changed. As a result, the discharge generated between the pair of electrodes 1 1, 1 2 is gradually unstable, and the occurrence of EUV light is also unstable. When the above-described EUV light source device of the hybrid type is used as a light source of a mass production type semiconductor exposure device, the electrode consumption as described above is suppressed, and it is necessary to extend the electrode life as much as possible. In order to cope with such a request, in the EUV light source device shown in Fig. 9 and Fig. 10, the first electrode 11 and the second electrode 12 have a disk shape, and are rotatably formed at least during discharge. That is, by rotating the first and second electrodes 11, 12, the position at which the pulse discharge occurs in both electrodes changes every pulse. Therefore, the thermal load received by the first and second electrodes 1 1, 12 is reduced, so that the wear rate of the electrodes 1 1, 1 2 is reduced, and the life of the electrode is prolonged. Hereinafter, the first electrode 1 i is also referred to as a first rotating electrode, and the second electrode 12 is also referred to as a second rotating electrode. Specifically, the first rotating electrode 11 on the disk and the center portion of the second rotating electrode 1 2 are formed. The rotation shaft 22e' of the first electric motor 22a and the rotation shaft 22f of the second electric motor 22b are attached, respectively. The first electric motor 22a and the second electric motor 22b rotate the respective rotating shafts 22e and 22f, the first rotating electrode 11, and the second rotating electrode 12. Also, the direction of rotation is not particularly regulated. Here, the rotating shafts 2 2 e, 2 2 f are introduced into the chamber 1 via, for example, mechanical seals 22c, 22d. The mechanical seals 22c, 22d are -51 - 200908815 to maintain the rotation of the rotary shaft under the reduced pressure atmosphere in the chamber 1. As shown in Fig. 9, the first rotating electrode 1 1 is partially immersed in the conductive first container 1 1 b in which the conductive feeding molten metal 1 1 a is accommodated. In the same manner, the second rotating electrode 1 2 is partially immersed in the conductive second container 12b in which the conductive feeding molten metal 1 2a is housed. The first container 1 lb and the second container 12b are connected to the power generator 8 of the pulse power supply means via the insulating power introduction portions 1 1 C, 1 2C which can maintain the pressure-reduced atmosphere in the chamber 1. As described above, the first and second containers lib, 12b and the feeding molten metal 11a, 12a are electrically conductive, and a part of the first rotating electrode 11 and a part of the second rotating electrode 12 are immersed in the feeding. Since the molten metal 11a, 12a is applied to the first container Ub and the second container 12b from the pulse power generator 8, the pulsed electric power is applied between the first rotating electrode 11 and the second rotating electrode 12, Pulsed power. Further, as the feeding molten metal 11a, 12a, the metal which does not affect the EUV emission is used when discharging. Further, the feeding molten metal na, 1 2a is a cooling means that also functions as a discharge portion of each of the rotating electrodes 1, 1, 2 2 . In the first container lib, the second container 12b is provided with a temperature adjustment means for maintaining the molten metal in a molten state. (2) Discharge start mechanism In the EUV light source device of the present embodiment, a laser beam of the second laser beam (starting laser beam) 24 is irradiated at a predetermined position in the discharge area - 52-200908815 2 laser The source 24a and the second lightning control unit 24b that controls the operation of the second laser source 24b. As described above, the edge portions of the peripheral edge portions of the respective rotating electrodes 1 1, 1 2 are disposed to face each other at a predetermined distance. Thus, the shortest portion between the edge portions of the peripheral portions of the two electrodes 1 1 12 is generated. Discharge. Therefore, the discharge position is stabilized, however, if the edge portion is deformed by abrasion due to discharge, the stability of the discharge position is lowered. Here, when the starting laser beam 24 is condensed at a predetermined position in the discharge region, the conductivity is lowered by electron emission near the laser focus. Therefore, the discharge channel position is set at the set laser focus. Therefore, the positional stability of the occurrence point of EUV radiation can be improved. As the first electric light source 24a that emits the second laser beam (starting laser beam) 24, for example, a solid-state laser source such as a carbon dioxide laser source, a YAG laser YV04 laser, or a YLF laser, or an ArF can be used. Excimer laser sources such as laser, KrF, and XeCl laser. Further, in the present embodiment, as the energy beam irradiated to a predetermined spot in the discharge field, the laser beam is irradiated, but instead of the laser beam, the beam may be irradiated to the high-temperature plasma material. An example of condensing for the second laser beam (starting laser beam) 24 is shown in Fig. 1 . Fig. 11(a) is a view showing an example in which the second laser beam is focused on a predetermined spot in the discharge area. As the condensing light system 24c', for example, a convex lens 24d is used. The dielectric breakdown between the electrodes is induced by spotting the second laser beam 24 at a predetermined point in the discharge region near the electrode. Here, at the laser focus (light-converging point), the edge 5 is reduced by the sub-beam of the electric potential 2, and the conductivity is lowered by the electron emission. Therefore, the position of the discharge channel is defined at the position of the spot where the laser is set. That is, by fixing the occurrence point of the dielectric breakdown by laser irradiation, the position of the discharge channel is fixed in the localized field of the discharge field. Therefore, the positional stability of the occurrence point of EUV radiation can be improved. In particular, by performing spot concentrating, the occurrence point of EUV radiation can be made small. The 1st (1)th diagram shows an example in which the second laser beam 2 4 is line-collected to a predetermined point in the discharge area. As the collecting optical system 24b, for example, two cylindrical lenses 24e, 24f are used. As is known, a cylindrical lens has a function of collecting or diffusing light only in one axial direction. The two cylindrical lenses 24e and 24f shown in Fig. 11(b) have a function of concentrating the second laser beam 24 in one axial direction. Further, the two cylindrical lenses are in a state in which the axial directions of the laser beams 24 for collecting light are orthogonal to each other. The dielectric breakdown between the electrodes is induced by linearly concentrating the second laser beam 24 at a predetermined point in the discharge region near the electrode. As in the case of spotlighting, the position of the discharge channel is defined on the concentrated light. That is, the position of the discharge path of the second laser beam 24 is fixed by laser irradiation so that the position of the discharge path is fixed in the localized field of the discharge field. Therefore, the positional stability of the point where the EUV radiation is generated can be improved. (3) The pulse power generator 8 of the pulse power generator pulse power supply means is a magnetic pulse compression circuit section formed by a capacitor and a magnetic switch, and has a short pulse width. Pulse-54-200908815 The first container 1 1 b and the first rotating electrode 11 and the second rotating electrode 12, to which the electric power is applied to the load, are shown in Fig. 9, and Fig. 10 is a diagram showing the pulse power generation. The pulse power of the figure generates two magnetic switches S R2 pulse compression circuit composed of a saturable reactor. The capacitor C1, the first magnet C2, and the second magnetic switch SR3 constitute a two-stage neodymium magnetic switch SR1, which is a reduction in exchange loss of the semiconductor off SW such as an IGBT, and is also referred to as a solid-state switch SW as the above-described switching means. The following steps will be based on the structure and operation of the circuit according to Figure 9. First, the charging voltage of the charger CH is adjusted so that the main capacitor C0 is charged by the charger CH. < The solid state switch S W is turned off. When the charging of the main capacitor C0 is completed so that it is turned on, it is applied to both ends of the magnetic switch S R 1 at both ends of the solid-state switch SW. When the time integral 施加 of the main voltage V0 applied to both ends of the magnetic switch SR1 reaches the limit defined by the magnetic switch, the magnetic switch SR1 saturates to turn on the capacitor C0, and the circuit of the magnetic switch SR1 and the step-up transformer body switch S W flows current. Simultaneously, on the secondary side, the circuit of capacitor C1 flows with current 2 container 12b, that is, between.构成The composition of the device. The device has a solid-state magnetic accelerator using a two-stage magnetic switch SR2 of SR3, a capacitive magnetic pulse compression circuit switching element. Also, il is called a means of exchange. The first diagram illustrates the following, at the time of the predetermined 値vi η, >, the solid-state switch SW such as the IGBT is a magnetic switch whose voltage is mainly determined by the characteristics of the charge SR 1 applied to the capacitor C0, and is 1 in the main Tr 1 The secondary side is fixed to the step-up transformer Tr1 so that the charge stored in the main-55-200908815 capacitor C0 is transferred and charged in the capacitor C1. Then, when the time integral 电压 of the voltage V 1 of the capacitor C 1 reaches a limit 决定 determined by the characteristics of the magnetic switch SR2, the magnetic switch SR2 saturates to turn on the magnetic switch, while in the capacitor C 1, the magnetic switch SR2, the capacitor C2 The loop flows current, travels to the charge stored in capacitor C1, and is charged to capacitor C2. Then, when the time integral 电压 of the voltage V2 of the capacitor C2 reaches the critical threshold determined by the polarity of the magnetic switch SR3, the magnetic switch SR3 is saturated to turn on the magnetic switch, and the high voltage pulse is applied to the first container and the second container. That is, between the second rotating electrode and the second rotating electrode. Here, the pulse width of the current pulse of each stage in which the magnetic switches SR2, SR3 and the capacitors ci, C2 are formed by the magnetic switches SR2, SR3 and the capacitors ci, C2 are set to be narrower as the downstream portion becomes smaller. The pulse compression operation 'is a short pulse strong discharge between the first rotating electrode and the second rotating electrode, and the input energy to the plasma is also increased. (4) Raw material supply and raw material vaporization mechanism The high-temperature plasma raw material 2 1 for emitting extreme ultraviolet light is supplied from the raw material supply unit 20 provided in the chamber 1 in a liquid or solid state, and is supplied to the discharge field (for the first The space between the edge portion of the peripheral edge portion of the rotating electrode n and the edge portion of the peripheral edge portion of the second rotating electrode 12 is adjacent to the space where the discharge occurs. Specifically, the high-temperature plasma raw material 21 is a space other than the discharge field, and is supplied to the gasified high-temperature plasma raw material to supply a space which can reach the discharge field. -56 - 200908815 The raw material supply unit 20 is provided, for example, on the upper wall of the chamber 1, and the high-temperature plasma raw material 21 is supplied in a droplet form (dropped) in the vicinity of the discharge area. The high-temperature plasma raw material supplied in the form of droplets is dropped, and reaches the space near the discharge area, and the first laser beam emitted from the second laser source 23a (laser for raw material) The beam 23 is irradiated to vaporize it as the first laser source 2 3 a that emits the first laser beam 23, for example, a carbon dioxide laser source, a YAG laser, a YV04 laser, a YLF laser, or the like can be used. Excimer laser sources such as solid laser sources, ArF lasers, KrF lasers, and XeCl lasers. Further, in the present embodiment, the laser beam is irradiated as an energy beam irradiated to the high-temperature plasma raw material 21, but instead of the laser beam, the ion beam and the electron beam are irradiated to the high-temperature plasma material. Also. As described above, the high-temperature plasma raw material vaporized by the irradiation of the first laser beam 23 is spread around the normal direction of the surface of the high-temperature plasma raw material on which the first laser beam 23 is incident. Therefore, the first laser beam 2 3 is a method in which the high-temperature plasma raw material after gasification expands in the direction of the discharge region, and it is necessary to irradiate the side of the discharge region facing the surface of the high-temperature plasma raw material. 1 The irradiation of the laser beam 2 3 is supplied to the vaporized high-temperature plasma raw material in the discharge field, and does not contribute to a part of the high-temperature plasma formation person due to the discharge, or the decomposition result of the plasma formation is generated. A part of the wire harness of the atomic gas is used as a chip to be in contact with the low temperature inside the EUV light source and is stacked. Therefore, it is preferable that the high-temperature plasma raw material after the vaporization does not spread in the direction of the EUV condenser, and the first laser beam 23 is irradiated to the high-temperature plasma material 2 1 . Specifically, the high-temperature electric paddle material 21 is supplied to a space between the pair of electrodes 111, 1 and the EUV condensing mirror 2, and in addition to the space outside the discharge field, the vaporized high-temperature plasma raw material can reach the discharge. The material supply unit 20 is adjusted in the manner of the space of the field. Further, the first laser beam 23 is irradiated to the side of the high-temperature plasma raw material facing the discharge region with respect to the raw material of the space supplied, and the vaporized high-temperature plasma raw material is expanded toward the discharge region. In this way, the first laser source 2 3 is adjusted. By the adjustment as described above, it is possible to suppress the occurrence of debris toward the EUV condensing mirror 2. As described above, the high-temperature plasma material vaporized by the irradiation of the first laser beam 23 is spread around the normal direction of the surface of the high-temperature plasma material incident on the first laser beam 23. Specifically, the density of the high-temperature plasma raw material that is vaporized by the irradiation of the first laser beam 23 is such that the normal direction becomes the highest density, and the density is lowered every time the angle is increased from the normal direction. According to the above, the irradiation conditions of the high-temperature plasma raw material 21 for the supply position in the discharge region and the irradiation energy of the first laser beam 23 are the spatial density of the vaporized high-temperature plasma raw material supplied to the discharge region. The distribution is a mode in which the condition of efficiently extracting EUV radiation after the high-temperature plasma material is heated and excited in the discharge field, and is appropriately set. -58- 200908815 Further, below the space where the high-temperature plasma raw material is supplied, a raw material recovery means 25 for recovering the unvaporized high-temperature plasma raw material is provided. (5) The EUV light emitted from the EUV light concentrating portion is collected by the oblique-incident EUV condensing mirror 2 provided in the eUV concentrating portion, and is collected by the EUV light extracting portion 7 provided in the cavity 1. It is introduced into an illumination optical system of an exposure apparatus (not shown). In general, the oblique incident type EUV condensing mirror 2 has a structure in which a plurality of thin concave mirrors are arranged in a nested manner with high precision. The shape of the reflecting surface of each concave mirror is, for example, a rotating elliptical surface shape, a rotating paraboloid shape, a Walter shape, and each concave mirror is a rotating body shape. Here, the Walter shape refers to a light incident surface which is a concave shape in which a hyperboloid and a rotating elliptical surface are sequentially rotated by a light incident side, or a hyperboloid and a paraboloid of revolution are formed. The base material of each of the above concave mirrors is, for example, nickel (Ni) or the like. The EUV light having a very short wavelength is reflected, so that the reflecting surface of the concave mirror is formed as a very good plane. The reflective material to which the smooth surface is applied is, for example, a metal film such as ruthenium (Ru), molybdenum (Mo), or rhodium (Rh). Such a metal film is densely coated on the reflecting surface of each concave mirror. With such a configuration, the EUV condensing mirror is an EUV light that satisfactorily reflects an oblique incident angle of 0 to 25, and is capable of collecting light. (6) The debris collector is provided between the discharge portion and the EUV light concentrating portion described above. In order to prevent damage of the -59-200908815 EUV condensing mirror, the first and second rotating electrodes 1 1,1 which are caught after being caught and discharged are provided. The crumb collector for the EUV light such as Sn or Li which is generated by the metal dust generated by the splashing or the EUV radiation seed in the peripheral portion of the second portion. As described above, in the Fig. 9, in the EUV light source device of the example, the debris collector is constituted by the gas collector 3. The gas mist 13b is constituted by a gas supplied from the gas supply unit 13 into the chamber 1. The aerosol mechanism is shown in Fig. 9. The nozzle 13 3 a is a gas-shaped opening that is elongated and has a square shape. When the unit 13 is supplied to the nozzle 13 3 a, the sheet-like gas is discharged from, and the gas mist 13b is formed. The gas mist 13b is a direction in which the gas is suppressed from reaching the E U V condensing mirror to the gas 13b, and is excellent for EUV light, and for example, rare particles such as helium (He) or argon (Ar) are used. Further, in the gas mist 13b and the collector 3 of the EUV condensing mirror 2. For the wheel type collector 3, for example, it is referred to as a "metal collector". The wheel type collector 3 is a type of EUV light that is not radiated, and a high temperature plasma is provided between the gas mist 13b and the EUV condensing mirror 2 by a plurality of plates provided in the high temperature direction and an annular support supporting the plate. By the high-temperature electric material, the high-temperature electric material, the scraps, and the like, only the present embodiment _ 1 3 b and the wheel type shown in Fig. 7 are in the shape of a rectangular parallelepiped, and the gas is discharged from the gas supply nozzle 1 The opening of 3a changes the above-mentioned debris [2]. Here, a gas having a high rate of incidence is used, and a wheel type is provided between the gas and the hydrogen (H2). The document 8 is described as covering a radial body in the field of high-temperature plasma slurry generation. This type of wheel collection -60-200908815 3 increases the pressure between the high temperature plasma and the wheeled collector 3. As the pressure increases, the gas density of the aerosol present in this condition increases, which increases the collision of gas atoms with debris. Debris is a reduction in exercise energy by repeated collisions. Therefore, the energy at which the debris collides with the EUV condensing mirror 2 is reduced, and the damage of the EUV condensing mirror 2 can be reduced. Further, the gas supply unit 14 is connected to the condensing space 1 b side of the chamber 1 to introduce a buffer gas which is not related to the light emission of the EUV light. The buffer gas supplied from the gas supply unit 14 is passed from the EUV condensing mirror 2 side through the wheel type collector 3, and then passes through the space between the wheel type collector holding partition wall 3a and the partition wall 1c. It is discharged from the vacuum exhaust unit 4. By generating the flow of such a gas, the debris which is not caught by the wheel type collector 3 is prevented from being directed toward the EUV condensing mirror 2 side, and the damage of the EUV condensing mirror 2 due to the debris can be reduced. Here, in addition to the buffer gas, a halogen gas or a hydrogen group such as chlorine gas (Cl2) may be supplied from the gas supply unit 14 to the condensing space. These gases are not removed by the debris collector and react with the debris accumulated in the EUV condenser 2 to function as a cleaning gas for removing the debris. Therefore, the function of suppressing the decrease in the reflectance of the EUV condensing mirror due to the accumulation of debris is suppressed. (7) The pressure in the discharge space 1 a of the partition wall is set to be a good discharge for heating and exciting the high-temperature plasma raw material that is vaporized by the laser beam, and must be kept below a certain level. The vacuum atmosphere. -61 - 200908815 On the one hand, the concentrating space 1 b is required to reduce the kinetic energy of the debris with a debris collector, so the pressure must be maintained at the debris collector portion. In Fig. 9 and Fig. 10, the gas is supplied by the gas mist, and the predetermined pressure is maintained by the debris collector 3 to reduce the kinetic energy of the debris. For this reason, the condensed space is a reduced-pressure atmosphere which must be maintained at a pressure of about 10,000 Pa as a result. Here, in the EUV light source device of the present invention, a partition wall 1c that partitions the inside of the chamber 1 into a discharge space and a condensing space is provided, and the partition wall 1c is provided with an opening that spatially connects the two spaces. . The opening functions as a pressure resistance, so that the discharge space is discharged by the vacuum exhaust device 4, and when the vacuum venting device 5 discharges the condensing space, the flow rate of the gas from the gas mist 13b is appropriately considered, and the opening is The size, the exhaust capability of each vacuum exhaust device, etc., maintains the discharge space 1 a at several Pa, and maintains the condensing space 1 b at an appropriate pressure. (8) Raw material monitor The raw material monitor 20a monitors the position of the raw material dropped by the above-described raw material supply unit 20 in the form of droplets. For example, as shown in Fig. 9, the timing at which the raw material dropped from the raw material supply unit 20 reaches the position P1 near the raw material monitor 20a is monitored. As a result of the above monitoring, the time from the arrival of the raw material to the position P1 to the position P2 irradiated by the first laser beam (raw laser beam) 23 is obtained. The monitoring loop is, for example, using a well-known laser metrology method. The raw material detection signal is sent from the raw material supply - 62 - 200908815 to the control unit 26 at the monitor 2〇a. As described above, the raw material 2i is dropped in the form of a droplet, and thus the raw material detection signal is a pulse signal which becomes intermittent. (9) Operation of the extreme ultraviolet (EUV) light source device The EUV light source of the present embodiment is used as the light source for exposure, for example, as follows. Fig. 13 and Fig. 14 are flowcharts showing the operation of the present embodiment. Fig. 15 is a flowchart, and the operation of this embodiment will be described below with reference to Figs. The control unit 26 of the E U V light source device stores the time data Atd, Ati, and Atg shown in the second and second figures. That is, 'Atd is the timing (time Td) from the trigger signal input to the switching means of the pulse power supply means (pulse power generator 8), and the switching means takes the on state and the time between the electrodes reaches the critical time 値Vp. Ati is the time until the current flowing between the electrodes reaches the critical threshold 値Ip after the discharge is started. Atg is a time from when the first laser beam is irradiated to the raw material until the spatial density distribution reaches at least a part of the predetermined vaporized raw material reaches the discharge region. In general, when the voltage V applied to the discharge electrodes 111, 12 is large, the rise in the voltage waveform between the discharge electrodes is increased. Therefore, the above A t d is dependent on the voltage V applied to the discharge electrodes 11 , 1 2 . The control unit 26 of the E U V light source device is a table in which a voltage V obtained in advance by an experiment or the like and a time Atd are stored as a table. Further, the control unit 26 of the EUV light source device memorizes the timing from the arrival of the raw material to the position of -63-200908815 (for example, P1 of Fig. 12), until the ray laser beam is reached (the laser beam for the raw material) The time atm 23 is irradiated to the position of the raw material 2丨 (for example, P2 in Fig. 2). Further, the control unit 26 is a timing for memorizing the correction times α and β and the switching means for outputting from the main trigger signal to the pulse power supply means, until the main trigger signal is input to the switching means of the pulse power supply means, so that the switching means becomes The delay time d 1 until the timing of the conduction. The correction time α θ β is as follows. First, the candidate command from the control unit of the EUV light source device is sent to the vacuum exhaust device 5, the vacuum exhaust device 4, the gas supply unit 13, the gas supply unit 14, the first motor 22a, and the second motor 22b ( Step S101 of the thirteenth, and S201 of Fig. 15). The vacuum exhaust device 5, the vacuum exhaust device 4, the gas supply unit 13 and the gas supply unit 14 that receive the command are started. That is, the vacuum evacuation device 4 operates, and the discharge space becomes a vacuum atmosphere. On the other hand, the vacuum exhausting device 5 operates while the gas supply unit 13 operates to form the gas mist 13b, and the gas supply unit 14 operates to supply the buffer gas and the cleaning gas into the collecting space 1b. As a result, the concentrating space lb reaches the predetermined pressure. Further, the first electric motor 22a and the second electric motor 22b operate to rotate the first rotating electrode 1 1 and the second rotating electrode 1 2 . Hereinafter, the above-described operation states are collectively referred to as a standby state (step S102 in Fig. 13 and S202 in Fig. 15). The control unit 26 of the EUV light source device transmits the operation start command signal to the material supply unit 20 and the material monitoring-64-200908815 20a after the waiting state (the steps S103 and 15 of Fig. 13). S203). The raw material supply unit 20 that receives the operation start command signal starts to drip the liquid or solid high-temperature plasma raw material (for example, liquid tin) used for EUV radiation in a droplet form. On the other hand, the material monitor 20a that receives the motion start command signal starts the monitoring operation, and when the material arrives at the position P1 described below, the material detection signal is transmitted to the control unit of the EUV light source device. Step S1 0 4 of FIG. 3 and S 2 0 4 of FIG. 5) At this timing, the dropped material 21 is not subjected to the first laser beam (raw material laser beam) 2 3 After the irradiation, it is directly recovered by the raw material recovery means 25. The control unit 26 of the EUV light source device transmits the candidate completion signal to the control unit 27 of the exposure device (step S105 of Fig. 13 and S 2 0 5 of Fig. 15). The control unit 27 of the exposure device that receives the signal for completion of the signal and the control unit 26 of the EUV light source device are received light-emitting commands. Further, when the exposure apparatus side controls the intensity of the EUV radiation, the intensity data of the EUV radiation is also included in the light emission command (step S of the Fig. 3 〇6, S206 of Fig. 5). The control unit 26 of the E U V light source device is a charger CH that transmits a charge control signal to the pulse power generator 8. The charge control signal is composed of, for example, a discharge start timing data signal. As described above, when the intensity data of the E U V radiation is included in the light-emitting command from the control unit 27 of the exposure device, the charging voltage data signal for the main capacitor C0 is also included in the above -65-200908815 charging control signal. For example, the relationship between the EUV radiation intensity and the charging voltage of the main capacitor C 0 is obtained by experiments or the like in advance, and the control unit 26 for storing the two tables of the EUV light source device is stored, and the table is stored. The intensity data of the EUV radiation of the light-emitting command received by the control unit 27 of the exposure apparatus is called the charging voltage data of the main capacitor C0 from the table. Further, based on the charged charging voltage data, the control unit 26' of the EUV light source device transmits a charging control signal including a charging voltage data signal to the main capacitor C0 to the charger CH of the pulse power generator (No. 1 3) Step S107 of the figure and S207) of Fig. 15). The charger CH performs charging of the main capacitor C0 as described above (step S1 0 8 of Fig. 3). The control unit 26 of the EUV light source device determines whether or not the first EUV light is generated (referred to as a first pulse) after the start of the operation (step S109 of Fig. 3), and at the time of the first pulse, the process proceeds from step S109 to step S. 1 1 0. If it is not the first pulse, then it moves to step S1 16 . In step S1 1 0, the control unit 26 of the EUV light source device calculates the timing of outputting the main trigger signal to the pulse power supply means, and controls the operation of the first laser source 23a with respect to the first laser control unit. When the first trigger signal of 23b is sent, the timing of the second trigger source 24a is controlled to the second trigger signal of the second laser control unit 24b. In the first pulse, the following voltage counters and current counter counts cannot be used, and the following feedback corrections cannot be corrected. Therefore, based on the time data previously stored, ^td, Δίί, Atg, Atm, dl, α , β -66 - 200908815 to determine the above timing. Further, as shown in FIGS. 1 and 2, in actuality, the main trigger signal is input to the switching means of the pulse power supply means (pulse power generator 8), and the timing Td at which the switching means is turned on is used as a reference. It is preferable to set the times τι and T2 to which the first laser beam 23 and the second laser beam 24 are irradiated. In the present embodiment, the timing of outputting the main trigger signal from the switching means of the pulse power supply means is determined in advance, and the timing of the switching means being turned on until the main trigger signal is input to the switching means of the pulse power supply means The delay time d 1 of T d . Thereafter, the timing Td' at which the main trigger signal is output to the switching means of the pulse power supply means is corrected by the delay time d1, and the timing Td at which the switching means is turned on is obtained. On the other hand, the timing T21 from the second trigger signal is sent from the timing T 1 ' sent by the first trigger signal to the delay time d2 until the first laser beam (the laser beam for raw material) 23 is irradiated. - the delay time d3 until the second laser beam (starting laser beam) 24 is irradiated is negligibly small compared to the ns order, and thus the first laser source is not considered here. 23a and the second laser source 24a are, for example, a Q-switched YAG laser device. Sending of the first trigger signal to the first laser control unit 2 3 b for controlling the operation of the first laser source 2 3 a with the timing Td' of the switching means for outputting the main trigger signal to the pulse power supply means as a reference At the timing 21, the timing T21 of the second trigger signal for the second laser control unit 24b that controls the operation of the second laser source 24a is performed by -67-200908815, and the main trigger signal can be input. The timings T1 and T2 at which the first laser beam 2 3 and the second laser beam 24 are irradiated are used as the reference timing Td of the switching means of the pulse power supply means. When the timing of transmitting the main trigger signal is used as a reference (time Td'), the timing of sending the first trigger signal to the first laser control unit 23b is Τ, and the second operation for controlling the second laser source 24a. The timing T2' of the second trigger signal of the laser control unit 24b is obtained as follows. As can be seen from Fig. 1 and Fig. 2, the timing T2 at which the second laser beam 24 is irradiated is based on the timing T d when the switching means of the pulse power supply means is turned on, and becomes T2 2 Td + At ... (1) . Therefore, the timing T2' of the second trigger signal of the second laser control unit for controlling the operation of the second laser source when the timing Td' of the main trigger signal is transmitted is T2' + d3 ^ (Td' + d 1 ) +Atd .--(2) Here, the delay time d3 is negligibly small, so the timing T2 of the second trigger signal is T2 ^ Td' + dl+ Atd (3) Here, when the voltage between the electrodes surely exceeds the critical 値Vp, the timing at which the second laser beam is irradiated is slightly delayed from Atd, so that the second laser beam is not irradiated. also may. The delay time α is defined as the correction time, and when the equation (3) is deformed, it becomes T2, g Td' + d 1 + Atd + a ... (4). In the present embodiment, it is made to be -68-200908815 T2' = Td' + d 1 + Atd + a · (5). Further, of course, the setting of T2' is not limited to the formula (5). It is also possible to satisfy the formula (4). For example, T2' = Td' + dl + Atd may be produced by the timing T1 of the first laser beam 23 and the second laser beam 24 by the first and second figures. The timing T2 is the following relationship. T2 + Ati^ Tl+Atg^ Τ2 + Δίΐ + Δίρ (6) In the present embodiment, the first laser beam 23 is irradiated at a timing when the discharge current surely exceeds the critical 値Ip, and the first The timing at which the laser beam 23 is irradiated is slightly delayed from Ati, and the delay time is defined as the correction time β. When the relationship between the timings T1 and T2 is set, Τ2 + Δΐί + β = Τ1 + Atg (7). Here, the correction time β is 0 ^ β ^ Δίρ (8). Of course, the setting of the relationship between the timings τ 1 and Τ 2 is not limited to the equation (7), and the equation (6) is satisfied. Yes, for example, Τ2 + ΔΗ = Τ1 + Atg, or 'T2 + Ati + Atp = Tl+Atg. The relationship between the timing of the transmission of the (7) type to the first trigger signal and the signal of the second trigger signal is (T2' + d3) + Ati + p = (Tr + d2) + Atg ·· (9 ). Here, the delay times d2 and d3 are negligibly small' (thus (9) or become Τ2' + Δίΐ + β = Τ 1 ' + Atg -69- 200908815 Τ 1 ' = T2' + Ati + P -Atg ".(10) . When (10) is substituted into (5), it becomes

Tl,= (Td, + dl+Atd + a) + Ati + P-Atg = Td' + d 1+(Atd + Ati-Atg) + (a + p) ·._ (11). As described above, the timing of transmitting the first trigger signal and the timing of sending the second trigger signal T2' when the timing Td' of the main trigger signal is transmitted is (1 1 ) and (5), respectively. Said. Here, the EUV light source device 'of the present embodiment is supplied by dropping the raw material into a droplet form by dropping. Therefore, the timing at which the dropped material reaches the irradiation position P2 of the first laser beam of FIG. 12, the timing Td' of transmitting the main trigger signal, the timing T1 of the first trigger signal, and the second timing The timing T2 of the trigger signal is required to be synchronized. The timing at which the raw material of Fig. 2 reaches the position P1 is taken as Tm, and when the raw material reaches the irradiation position P2 after passing through Atm from Tm, the timing at which the raw material reaches the irradiation position P 2 becomes T m + Δ tm . That is, when the timing Tm is used as a reference, it must be established.

Tl = Tm + Atm (12). If the formula (12) is changed to the expression of the timing of the first trigger signal, it becomes (Tl' + d2) = Tm + Atm (13) Here, the delay time d2 is negligible. Small reason, thus (13) is to become

Tl' = Tm + Atm ". (14). Therefore, if the timing Tm is used as the reference, the timing Td' of the main trigger signal -70-200908815 is transmitted, and the first trigger signal of the first laser control unit is used. The delivery timing τ11 is obtained by the second trigger signal transmission timing T2' of the second laser control unit that controls the operation of the second laser source. T d ' = Tm + ( Δ tm - Δ td - Δ ti + Δ tg) - d 1 - (α + β ) .--(15)

Tl' = Tm + Atm " (14) T2 ' = Tm + (Δtm + Atg - Δti) - β · (16) Here, Δίιη is obtained from Fig. 12 and is obtained as follows. As shown in Fig. 2, the position of the raw material discharge unit of the raw material supply unit 20 is taken as Ρ0, the position at which the raw material monitor 20a monitors the raw material is taken as P1, and the irradiation position of the first laser beam 2 3 is taken as P. 2. The distance between p 〇 and pi is taken as L, and the distance between P0 and P2 is taken as Lp. Further, the time at which the raw material 21 is located at P0 is taken as the origin, and as described above, the timing at which the raw material 21 reaches P1 is taken as Tm, and the timing at which the raw material 21 reaches the irradiation position P2 is taken as Tm + Atm. When the falling speed of the raw material at the position p〇 is taken as 〇 and the acceleration of gravity is taken as G, it becomes L = (1 /2) GTm2 (17)

Lp = (l/2)G(Tm + Atm)2 ··· (18) . From (18) and (19) where 'Atm is obtained as in (19) 〇

Atm = (2Lp/G) 1/2 - (2L / G) 1/2 (19) That is, in step S110 of Fig. 13, the control unit 26 of the EUV light source device is based on the time memorized in advance. The data Atd, Ati, Mg, Δtm, dl, a, 0, and the timing Td1 of the main trigger signal when the transmission timing Tm is used as a reference is obtained by the equations (15), (14), (16) and (19), 71 - 200908815 The timing ΤΙ* of the first trigger signal of the first laser control unit 23b, and the timing T2' of the second trigger signal of the second laser control unit 24b that controls the operation of the second laser source 24a. (S208 of Fig. 15). Here, the time data Atci is called by a table corresponding to the storage voltage V and the time Atd. The data of the voltage V applied to the discharge electrode is, for example, directly used to store the charge control signal to the charger CH of the pulse power generator in step s 107, by storing the EUV radiation intensity and charging the main capacitor C0. The charging voltage data of the main capacitor C0 called by the voltage related table. The timing of the charger charging stabilization time tst after the charging of the main capacitor C0 is stabilized is the timing of detecting the material detecting signal from the material monitor 20a as the reference timing Tm. (Step S 1 1 1 of Fig. 3, S204, S207 of Fig. 5). Further, the setting of the reference timing Tm is not limited to the timing when the charger charging stabilization time tst is passed, and the timing of detecting the raw material detection signal is first detected. For example, after the timing of the time tst, the timing of detecting the predetermined number of raw material detection signals may be set as the reference timing Tm. The control unit 26 of the EUV light source device uses the reference timing Tm set in step S1 1 as a reference, and the transmission obtained by the equations (15), (14), (16), and (19) is based on the timing Tm. The timing Td1 of the main trigger signal, the timing of the first trigger signal from the first laser control unit 23b, and the second trigger signal of the second laser control unit 24b that controls the operation of the second laser source 24a. The delivery timing T2^ transmits the main trigger signal -72-200908815, the first trigger signal, and the second trigger signal to the switching means of the pulse power supply means (pulse power generator 8), and the first laser control section 23b The second laser control unit 24b (step S1 1 in Fig. 13, 2, S209, S213, and S217 in Fig. 15). The control unit 26 of the EUV light source device operates a voltage counter (not shown) that measures the start of the output of the main trigger signal so that the voltage between the electrodes reaches the critical value pVp. Further, a current counter (not shown) that starts the output of the second trigger signal so that the discharge current reaches the critical threshold pIp is measured (step S1 1 3 of Fig. 4, S212, S216 of Fig. 15) ). Further, when the voltage counter and the current counter are input with the light-emission command signal from the control unit 27 of the exposure machine, they are cleared by zero. The voltage counter is used for feedback control after the main trigger signal is output and the time until the voltage between the electrodes reaches the critical value 値V p is made constant. The "surface" current counter is used for feedback control after the second trigger signal is output, in order to make the discharge current reach the critical time 値Ip. That is, the timing Td' of the main trigger signal when the timing Tm is used as the reference is the timing of the first trigger signal of the first laser control unit Τ 对于 'the operation for controlling the second laser source (2) The second trigger signal transmission timing T2' of the laser control unit is the first time (the first pulse) is as described above, and is determined according to the equation (1 5 ) (1 4 ) (1 6 ) (1 9 ) However, the second and subsequent times are as follows. According to the above voltage counter, the count of the current counter is determined according to the -73-200908815 修正 corrected by the above formula (1 5 ) (1 4 ) (16) (19). The control unit 26 of the EUV light source device detects that the voltage between the electrodes reaches the critical threshold by the voltage monitor (not shown), and stops the voltage counter. Further, when the discharge current reaches the threshold 値Ip by the current monitor (not shown), the current meter is stopped (step S114 in Fig. 14 and S212 and S216 in Fig. 15). In step S 1 1 2 of FIG. 13 , after the main trigger signal is sent according to the formula (1 5 ), the main trigger signal is input to the switching means of the pulse power means, and the delay time d 1 is passed. Then, the exchange hand (for example, IGBT) is turned on (S209, S210 in Fig. 15). When the switching means is turned on, the voltage between the first rotating electrode 11 and the second rotating electrode 1 2 rises, and after the time ^td, the interelectrode pressure reaches the critical 値Vp. As described above, the critical enthalpy Vp is a voltage at which the discharge current 値 flowing during discharge becomes a critical value 値Ip or more (Fig. S210, S211). As described above, in step S112, the second trigger signal is sent to the second laser control unit 24b at time T2'' according to the equation (16). The timing T2' after the timing at which the voltage between the electrodes reaches the critical 値Vp (Td + Atd ) causes the second laser beam (the starting laser beam) to be irradiated in the discharge region (S213 in Fig. 15 S214). The second laser beam 24 is irradiated in the discharge field, and discharge starts at the discharge collar. After the discharge is started, after the Ati, the discharge current reaches a large value to the above-mentioned critical 値Ip (S214, S215 of Fig. 15). The boundary Ip is used to obtain the required intensity of the EUV emission. The detector is used to convert the transmitter to the lower limit of the current flow of the -4 - 200908815 flow. Further, a period in which the discharge current 値 is equal to or greater than the critical 値Ip is taken as Atp. Further, as described above, in step S112, the first trigger signal is sent to the first laser control unit 2 3 b in accordance with the timing T1 ' of the equation (14). As a result, at the timing T1 in the period of (T2 + Ati-Atg ) to (T2 + Ati + Atp-Atg ), the first laser beam (the laser beam for the raw material) 2 3 is irradiated (the image of Fig. 15) S215, S217, S2 1 8 ). That is, as a result of the transmission of each of the trigger signals by the control unit 26 of the EUV light source device in step s 1 1 2 ', the position of the discharge channel is defined at a predetermined position. Further, in the discharge channel in which the position is defined, the spatial density distribution is a discharge current necessary for obtaining EUV radiation of a predetermined intensity for the magnitude of the discharge current in a state where at least a part of the vaporized raw material of a predetermined distribution reaches the discharge channel. The discharge is generated in a manner above the lower limit. In the discharge, plasma is formed at the edge of the peripheral edge portion of the first rotating electrode 11 and the second rotating electrode 12, and plasma is formed. When the plasma is heated and excited by the pulsed large current of the flow electric blade to increase the temperature, EUV having a wavelength of 3.5 nm is generated from the high-temperature plasma (step S115 of Fig. 14 and S of Fig. 15). 2 1 9 ). Further, the above-described spatial density distribution is set to generate EUV radiation as efficiently as possible. Specifically, it is appropriately set to the supply position of the high-temperature plasma raw material in the discharge field, the irradiation direction of the j-th laser beam 2 3 of the high-temperature plasma raw material, and the irradiation energy of the second-order laser beam 2 3 Set to the optimal spatial density distribution as described above. Further, the position of the discharge channel is determined by the irradiation of the second laser beam 24 -75 - 200908815 at a predetermined position, thereby improving the positional stability of the position at which the plasma is generated. In other words, the control unit 26 of the EUV light source device transmits the result of each of the trigger signals, thereby realizing efficient EUV radiation and stabilizing the occurrence position of the EUV radiation. The EUV radiation emitted from the plasma is collected by the oblique-incident EUV condensing mirror 2 disposed in the condensing space 1 b through the opening provided in the partition wall 1 c and the wheel-type collector 3 The EUV light extraction unit 7 of the setting chamber 1 is introduced into an illumination optical system of an exposure apparatus (not shown). When the first EUV radiation is completed as described above, the process returns to step S106 of Fig. 3, and the lighting command from the exposure device is standby. After receiving the illuminating command, the process proceeds to step S1 09 via the above steps S 1 07, S 1 08. The next EUV radiation does not determine the initial pulse, and the process proceeds to step S116 in step S109. In step S116. The control unit 26 of the EUV light source device is a number of voltage counters based on the time until the inter-electrode voltage reaches the threshold 値Vp after the start of the main trigger signal measured in step S1 14, and the second trigger signal. The number of current counters at the time until the discharge current reaches the critical value 値Ip after the start of the output, and the timing T1 of the first trigger signal to the first laser control unit 23b is expressed by the following equation: The feedback calculation of the second trigger signal transmission timing T2' of the second laser control unit 24b that operates the laser source 24a. Tvcal II (dl+Atd)-tvc ...(20) tical = Ati-tic ...(2 1 ) -76- 200908815 where tvcal is the time until the electrode reaches the critical 値Vp after the start of the main trigger signal The correction is 値, while the tvc voltage counter measures the time. Further, tic al is the time until the discharge current reaches the critical 値Ip after the output of the second trigger signal, and tic is the time measured by the current counter. (Step 1 3, S116, and S208 of Fig. 15). Further, as shown in the equation (20), tvcal is a delay d1 from the output of the main trigger timing Td', such that the main trigger signal is input to the pulse power supply hand exchange means, and the switching means becomes the turn-on timing Td. The means becomes the timing of the conduction Td - the correction of the sum of the times until the electrodes reach the critical 値Vp. As described above, the solid-state SW of the means for switching the pulse power supply means is a semiconductor element such as an IGBT which is mostly capable of flowing a large current. A semiconductor switching element such as an IGBT is input with a gate (corresponding to the main trigger signal of the present embodiment), and actually becomes a conduction gap to some extent. That is, the formula (20) is a jagged corrector who also considers exchange. In consideration of the correction in step S116, the control unit 26 of the EUV light source device determines the timing Td1 of the transmission timing Tm as the reference main trigger signal by the following equation, and the transmission of the trigger signal to the first laser control unit 23b. The timing T 1 1 is used to control the transmission of the second trigger signal by the second laser control unit 24b by the second laser source 24a (step S117 in Fig. 13 and S208 in Fig. 15).

Td' = Tm + (/\tm-Atd-Ati + Atg)-dl - (a + p)-(tvcal + tical)... The voltage is at the time of the opening of the figure of the segment of the voltage switch exchange signal The first movement when the component is found! Ding 2' (22) -77- 200908815

Tl' = Tm + Atm ··· (14) T2' = Tm + (Atm + Atg-Ati)-p-tical ... (23)

Atm = (2LP/G) 1/2 - (2L / G) W2 -- (19) The control unit 26 of the EUV light source device is the charger charging stabilization time tst of the time until the charging of the main capacitor CO is stabilized. At the timing, the timing at which the material detection signal from the material monitor 20a is first detected is used as the reference timing Tm (step S1 1 8 of Fig. 3, S204 'S207 of Fig. 5). Further, the setting of the reference timing Tm is not limited to the timing at which the raw material detection signal is first detected after the timing of the charger charging stabilization time tst. For example, after the timing of the time tst has elapsed, the timing at which the predetermined number of raw material detection signals are detected may be set as the reference timing Tm. Thereafter, the control unit 26 of the EUV light source device is determined by the equation (2 2 ) ( 1 4 ) ( 23 ) ( 24 ) using the reference timing Tm set in step S 1 18 as a reference. The timing Td1 of the main trigger signal when the timing Tm is used as the reference, the timing of the first trigger signal of the first laser control unit 23b, and the second laser control for controlling the operation of the second laser source 24a The sending timing T2' of the second trigger signal of the portion 24b, the main trigger signal, the first trigger signal, and the second trigger signal are respectively sent to the switching means of the pulse power supply means, and the first laser control unit 2 3 b 'The second laser control unit 24b (step S119 in Fig. 13 and S 209, S214, and S217 in Fig. 15). Hereinafter, the process proceeds to step S1 1 3 of FIG. 4, and the control unit 26 of the EUV light source device measures the voltage at which the output of the main trigger signal starts so that the voltage between the electrodes -78-200908815 reaches the critical value 値Vp. The counter is activated. Further, the current counter that has started to output the second trigger signal so that the discharge current has reached the critical value 値IP is measured (S 2 1 2, S 2 1 6 in Fig. 5). Further, as described above, when the voltage counter and the current counter are input from the control unit of the exposure machine, the light-emitting command signal is cleared by zero. The control unit 26 of the EUV light source device detects the timing at which the voltage between the electrodes reaches the critical threshold pV p by the voltage monitors not shown in Figs. 9 and 10, and stops the voltage counter. Further, 'the current monitor that is not shown is used to detect the timing at which the discharge current reaches the critical threshold ip', and the current counter is stopped (step S114 in FIG. 14 and S212 and S216 in FIG. 15). In step S1 12, According to the formula (22), the main trigger signal is sent at the timing Td', and after the main trigger signal is input to the switching means of the pulsed lightning supply means, the switching means is turned on after the delay time d 1 ' (S209 of Fig. 14) S210) ° When the switching means is turned on, the voltage between the first rotating electrode 11 and the second rotating electrode 1 2 rises, and after the time A td , the voltage between the electrodes reaches the critical value pVp (S210 of Fig. 15) , S211). As described above, in step S112, the second trigger signal is sent to the second laser control unit 24b by the timing 2' according to the equation (23). As a result, the timing T 2 after the timing at which the voltage between the electrodes reaches the timing 値VP (Td + Atd ) causes the second laser beam (the starting laser beam) 24 to be irradiated in the discharge field (Fig. 15 S213'S214). -79- 200908815 The second laser beam 24 is irradiated in the discharge field, and discharge starts at the discharge. After the discharge is started, after the Ati, the discharge current reaches the above-described critical 値Ip (S214, S215 of Fig. 15). Further, as described above, in step S112, the first trigger signal is sent to the first laser control unit in accordance with the (14) type machine T1'. As a result, during the period (T2 + Ati-Atg ) to (T2 + Ati + Atp-Atg ), the first laser beam (the laser beam for raw material) 23 is illuminated by S215 and S217 in Fig. 15 S218). That is, in step S119, the control unit 26 of the EUV light source device triggers the signal, and the position of the discharge channel is delineated in the positionally located, and in the discharge channel where the position is delimited, the spatial density distribution is When at least a part of the vaporized raw material to be discharged reaches the discharge channel, the discharge is generated so that the discharge current is equal to or higher than the lower limit of the discharge current of the EUV radiation having a predetermined intensity. The discharge occurs between the edge portions of the first rotating electrode 11 and the second rotating electrode 12, and plasma is formed. When the plasma is heated and excited by the large current in the form of a flowing plasma to be heated, the EU V having a wavelength of 1 3 · 5 nm is generated from the warm plasma (Step S 1 of Figure 14) S 2 1 9). Further, the above-described predetermined spatial density distribution is set such that EUV radiation is generated as efficiently as possible. Further, the position of the discharge channel is determined at a predetermined position, and the positional stability of the position at which the plasma is generated is increased. That is, in step S119, the control unit of the EUV light source device transmits the time zone 23b of the size of the field (send the signal. The minute is divided into the required peripheral pulse, the cylinder 15 can be provided with the signal of the -80-200908815 As a result, efficient EUV radiation and stabilization of the occurrence position of EUV radiation can be achieved. EUV radiation emitted from the plasma is borrowed by the wheel type collector 3 through the opening provided in the partition wall 1c. The EUV concentrating mirror 2 disposed in the concentrating space is condensed, and is introduced into the illuminating optical system of the exposure apparatus (not shown) by the EUV light extracting unit 7 of the setting chamber 1. Hereinafter, the period of the exposure process is continued. Is the process from step S 1 0 6 to step S 1 15 5. When the exposure process is finished, the process is completed after step S 1 1 5 . By performing the action as described above, the first laser is used. The spatial density distribution of the gasified high-temperature plasma raw material corresponding to the discharge area in the irradiation of the beam 23 is set to generate EUV radiation as efficiently as possible. Further, the irradiation result of the first laser beam 23 can be set. Such appropriate space In the manner of the degree distribution, the raw material supply position in the discharge area is appropriately set in advance, and the irradiation energy of the first laser beam 23 is applied to the irradiation position of the first laser beam 23 of the raw material. The radiation beam 24 is condensed at a predetermined position in the discharge field, and at the same time as the discharge is started, the position of the discharge channel is defined at the position where the laser focus is set. Therefore, the positional stability of the occurrence point of the EUV radiation can be improved. Since the irradiation timing of the first laser beam 23 and the irradiation timing of the second laser beam 24 are set as described above, the spatial density distribution is a gasification material having a predetermined distribution in the discharge channel whose position is defined. When at least a part of the discharge channel reaches the discharge channel, the discharge becomes a discharge -81 - 200908815. The magnitude of the current is equal to or higher than the lower limit of the discharge current 所需 required for obtaining EUV radiation of a predetermined intensity. As a result, the efficiency is excellent. EUV radiation. Especially in the present embodiment, the feedback control is performed such that after the output of the main trigger signal, the voltage between the electrodes reaches the critical 値Vp, and the second After the output of the trigger signal, the time until the discharge current reaches the critical value 値Ip is constant. Therefore, for example, the operation of the semiconductor switching element such as IG BT of the solid-state switch SW using the switching means of the pulse power supply means occurs. In addition, as shown in Fig. 10, the magnet 6 may be provided in the vicinity of the discharge region in which the plasma is generated, and the magnetic field may be applied to the plasma. In the EUV light source device of the present invention, a high-temperature plasma raw material is supplied in a space near a discharge region between discharge cells in a vacuum atmosphere, and the supplied high-temperature plasma raw material irradiates a laser beam and vaporizes the high temperature. After the slurry raw material, the vaporized high-temperature electric paddle material is supplied to the discharge field. Then, a discharge occurs at the timing of supplying the vaporized gas in the discharge field, and plasma for performing EUV radiation is generated. The plasma generated in this way is diffused and disappears for the particle density gradient of the high-temperature plasma raw material after vaporization in the discharge field. That is, since the plasma is diffused, the size of the plasma is increased. Here, the same magnetic field is applied approximately in parallel with the discharge direction occurring between the first and second rotating electrodes. Charged particles in the same magnetic field are subjected to the force of Loreng (82-200908815). The Lorenzi force acts in a direction perpendicular to the magnetic field, so that the charged particles are moving in a constant velocity circular motion on a plane perpendicular to the magnetic field. On the one hand, in the direction parallel to the magnetic field, the charged particles are not subjected to an external force, and thus the same velocity motion as the initial velocity is performed. Therefore, the motion of the charged particles is to synthesize the above-described motion, and thus a helical motion of a certain pitch is performed along the magnetic field (toward the direction of the magnetic field). Therefore, it is estimated that when the same magnetic field is applied in parallel in the discharge direction between the first and second rotating electrodes Η12, if the radius of rotation of the charged particles around the helical moving magnetic field becomes a sufficiently small magnetic field, It is presumed that the above-mentioned electric paddle diffusion amount can be reduced. That is, the size of the electric paddle can be reduced as compared with when no magnetic field is applied. Further, it is considered that the plasma life is longer than the natural disappearance after diffusion, and as described above, when a magnetic field is applied, EUV can be emitted longer than when the magnetic field is not applied. That is, if a magnetic field is applied as described above, the size of the high-temperature plasma that radiates E U V (i.e., the size of the EUV light source) can be reduced, and the emission time of the EUV can be extended. Therefore, the EUV light source device of the present invention is more preferably used as an exposure light source by applying a magnetic field. Further, the above-mentioned rotational radius of the charged particles is sufficiently smaller than the shortest distance from the plasma generation position to the EUV condensing mirror 2, and the high-speed ion debris in the debris of the commercial temperature plasma raw material is This radius of rotation is helically moved and cannot reach the concentrating mirror. That is, it is presumed that the amount of scattering of ions is reduced by applying a magnetic field. -83- 200908815 2. Modification of the embodiment shown in Fig. 9 and Fig. ○ In the EUV light source device of the present invention, the high temperature plasma material for emitting extreme ultraviolet light is in a liquid or solid state. Next, it is supplied near the discharge field. In the EUV light source device shown in the above-described first embodiment, the above-mentioned raw materials were supplied in the form of droplets. Of course, the supply mechanism of the high-temperature plasma raw material is not limited to those exemplified in the above embodiment. Hereinafter, other materials for the raw material supply unit for the high-temperature plasma raw material will be described, for example. (1) First modification

Fig. 16 and Fig. 17 are views showing a first modification of the above embodiment. In detail, Fig. 16 is a front view showing the EUV light source device of the present invention. EUV radiation is taken from the left side of the same figure. That is, Fig. 16 is a view showing a part of the replacement raw material supply unit in the EUV light source device of the embodiment shown in Fig. 9. Moreover, in order to make it easy to understand, FIG. 16 shows that the arrangement of the raw material supply unit is focused on, and a part of the EUV diaphragm device is omitted. Further, the omitted portion is equivalent to the ninth figure. On the other hand, Fig. 17 is a plan view showing the EUV light source device of the present embodiment, and a part of the EUV light source device is omitted as in the case of Fig. 16. In the modification shown in Fig. 16 and Fig. 7, a linear material 3 is used as a high-temperature electric hair material. Specifically, a metal wire including an extreme ultraviolet radiation seed, for example, includes tin (S η ). -84 - 200908815 The material supply unit 30 of the first modification has a function of supplying the linear material 3ι to a predetermined space. The material supply unit 30 is composed of a reel 3〇a, a reel 3〇e, a positioning means 3〇b, a positioning means 3〇c, a linear material 31, and a drive mechanism 30d.驱动, the drive mechanism 3〇d is driven and controlled by a control unit (not shown) in Figs. 16 and 17 . The linear material 31 is wound around a reel 3〇a and a reel 3〇e. The spool 30a is a spool on the upstream side of the linear material 3丨. On the other hand, the reel 3〇e is taken up by the winding shaft on the downstream side of the linear material 3丨 fed from the reel 30a. The linear material 31 is fed from the reel 30a by the drive mechanism 3〇d so that it is driven to be rotated. The linear material 31 sent from the reel 30a is the first one discharged from the second laser source 23a! When the laser beam (field beam for laser beam) 23 is irradiated, it is vaporized. As described above, the direction of expansion of the vaporized high-temperature electric prize material is dependent on the position of the human target of the i-th laser beam 23 with respect to the raw material 31. So the first! The laser shot 23 f is positioned such that the incident position of the linear original half bucket 31 faces the discharge area, and the linear material 3 i is positioned by the positioning means 3〇b and the positioning means 30c. Further, the position to be positioned is a material which is vaporized by the first laser beam 23 and is vaporized by the linear material 3, and can reach a position in the discharge region. In addition, the linear material 51 is supplied, and the linear raw material η is irradiated to the first laser beam 23, and the high-temperature electric paddle material (liquid material) is expanded in the direction of the discharge region, and is adjusted from the third The optical axis ' of the first laser beam 23 emitted by the laser source 23a and the energy of the first laser beam 23 are -85-200908815. Here, the distance between the discharge region and the linear material 31 is by laser. The vaporized high-temperature plasma raw material 'expanded by the beam irradiation in the direction of the discharge region is set to reach the discharge region at a predetermined spatial density distribution. Further, as shown in Fig. 1 and Fig. 7, the linear material 31 is preferably provided in a space between the pair of electrodes 1, 1, 2 and the 聚 ϋ V condensing mirror 2. In the linear material 31 thus supplied, the first laser beam 23 is irradiated on the side facing the discharge region of the surface of the linear material as described above, and the linear material which is vaporized is toward the discharge field. The direction is extended, but does not extend in the direction of the EUV condenser 2. In other words, by setting the irradiation position of the linear material 3 to the radiation field and the irradiation position of the first laser beam 23 as described above, it is possible to suppress the debris from proceeding to the EUV condensing mirror 2. (2) Second modification Fig. 18, Fig. 19, and Fig. 20 are views for explaining a second modification of the above embodiment. In detail, Fig. is a front view showing the EUV light source device of the embodiment. EUV radiation is taken from the left side of the same figure. That is, Fig. 18 is a view showing a portion of the EUV light source device of the embodiment shown in Fig. 9 in which the raw material supply unit 20 is replaced. Further, in order to facilitate the understanding, the "18th drawing shows the arrangement of the raw material supply means" and the constituents, a part of the EUV light source device is omitted. The part that was omitted is the same as the table 9 and so on. On the one hand, Fig. 19 is a plan view showing the EUV light source device of the present embodiment, and Fig. 20 is a side view showing the EUV light source device of the present invention -86 - 200908815 'the same as Fig. 8'. A part is omitted, and 'in the 19th figure' indicates a case where the electric power is fed to the electrode 1 1, 2 via the slider. For example, as shown in the figure, the feeding of the pulse electric power to the electrode 12 is from the electric power. The introduction portion 1 2 c is performed via the slider 1 2 d. The modification shown in Fig. 18, Fig. 19, and Fig. 20 is a liquid material used as a high-temperature plasma material. Specifically, liquid materials including extreme ultraviolet radiation seed, for example, include tin (Sn). The raw material supply unit 4A of the second modification has a function of supplying a liquid raw material to a predetermined space. The material supply unit 40 is composed of a liquid material supply means 40a, a material supply disk 40b, and a third motor 40c. Further, the liquid material supply means 40a is a third motor drive mechanism (not shown), and is driven and controlled by a control unit (not shown) in Figs. 18, 19, and 20. A groove portion is provided on the side surface side of the raw material supply disk 40b. First, the liquid material is supplied to the above-mentioned groove portion by the liquid material supply means 40a. Thereafter, the raw material supply disk 40b is rotated in one direction by the third motor 4〇c. The liquid material supplied to the groove portion moves together with the rotation of the groove portion. The liquid material supplied to the groove is vaporized when the first laser beam (field laser beam) 23 emitted from the first laser source 23a is irradiated. The direction in which the raw material for the vaporized high-temperature plasma is expanded as described above depends on the injection position of the first laser beam 2 to the raw material. Therefore, the material supply disk 40b is disposed in the field of discharge -87-200908815, in such a manner that the incident position of the first laser beam supplied to the liquid material of the groove portion faces the discharge region. Specifically, the raw material supply disk 40b is disposed such that the side surface portion provided in the groove portion faces the discharge region. Further, the position "arranged by the raw material supply disk 40b" is a material that is vaporized by the first laser beam 23 to be supplied to the liquid material supplied to the groove portion, and can reach a position in the discharge region. In addition, the liquid material is supplied, and the first laser beam 2 is irradiated in the field of discharge, and the high-temperature plasma raw material (liquid raw material) which is vaporized is expanded in the direction of the discharge field, and is adjusted from the i-th The optical axis of the first laser beam 23 emitted by the laser source 23a and the energy of the first laser beam 23. The distance between the discharge area and the raw material supply disk 40b is a high-temperature plasma raw material after the gasification of the first laser beam 23 in the direction of the discharge region is set to reach the discharge field with a predetermined spatial density distribution. . Here, since the liquid raw material supplied to the groove portion moves together with the rotation of the groove portion, the liquid raw material is continuously supplied to the liquid raw material by the liquid raw material supply means 40a, whereby the first supply can be continuously supplied to the predetermined first The irradiation position of the laser beam 2 3 . Further, as shown in the 18th, 19th, and 20th, in the configuration of the second modification, the liquid material supplied to the groove portion is a space on a plane perpendicular to the optical axis, and moves toward the vicinity of the discharge region. The first laser beam 2 3 is irradiated with a liquid material supplied from the groove portion in a direction perpendicular to the optical axis. Therefore, the high-temperature plasma raw material (liquid raw material) after gasification does not expand toward the EUV condenser 2. Therefore, the irradiation of the high-temperature plasma material by the first laser beam 23 and the use of the -88-200908815 debris generated by the discharge between the electrodes are hardly performed on the EUV condensing mirror 2. (3) Third Modifications Figs. 21 and 22 are diagrams for explaining the third modification of the above embodiment. In detail, Fig. 2 is a front view showing the e U V light source device of the present embodiment. EUV radiation is taken from the left side of the same figure. On the one hand, Fig. 22 is a side view showing the EUV light source device of the present invention. 21 and 22 are diagrams showing the parts and electrodes of the replacement material supply unit 20 in the EUV light source device of the embodiment shown in Fig. 9, and 'for easy understanding', Fig. 21 shows the supply of raw materials. The configuration of the unit 'constitution as a focus' is part of the EUV light source device is omitted. Further, the omitted portion is equivalent to the ninth figure. In the third modification shown in Fig. 21 and Fig. 22, a liquid raw material is used as a high-temperature plasma raw material. Specifically, liquid materials including extreme ultraviolet light-emitting seeds, for example, include tin (S η ). The raw material supply unit 50 of the third modification has a function of supplying a liquid raw material to a predetermined space. The material supply unit 50 is composed of a liquid material bus 50a, a capillary 50b, a heater 50c, a liquid material bus control unit 50d, and a heater power source 5〇e. Further, the liquid material bus control unit 50d and the heater power source 50e are driven and controlled by the control (not shown) in Figs. 21 and 22 . The liquid material bus 50a is a liquid material containing a substrate containing extreme ultraviolet radiation. On the liquid material bus 50 a, a capillary tube 5〇b of a very thin tube is provided. The capillary 50b is a liquid material-89-200908815 accommodating portion that penetrates the liquid material bus line 50a. In the raw material supply unit 50 of the third modification, the liquid material accommodated in the liquid material bus line 50a is guided by the capillary phenomenon 'to the inside of the capillary tube 50b and guided to the tip end of the capillary 50b. As the liquid material including the extreme ultraviolet light-emitting seed contained in the liquid material bus line 50 a, for example, tin (Sn) is used. The temperature of the liquid feed bus is the way Sn maintains the liquid state. The liquid material bus control unit 50d is controlled. Further, the capillary 50b is heated by the heater 50c in order to avoid solidification of the liquid material in the tube. The power supply to the heater 50c. This is done by the heater power supply 50e. When the first laser beam (raw material laser beam) 23 discharged from the first laser source 2 3 a is irradiated to the liquid material reaching the tip end of the capillary 50b, the liquid material is vaporized. As described above, the direction in which the raw material for vaporized high-temperature plasma expands depends on the incident position of the first laser beam 23 with respect to the raw material. Therefore, the first laser beam 23 faces the discharge region with respect to the incident position of the liquid material reaching the tip end of the capillary 50b, and the tip end of the capillary 50b is disposed. Further, the position at which the tip end of the capillary 50b is disposed is a material which is vaporized by the first laser beam 23 to be supplied to the liquid material supplied to the tip end of the capillary 50b, and reaches a position in the discharge region. When the liquid material is supplied to the tip end of the capillary 50b and the first laser beam 23 is irradiated to the tip end of the capillary tube, the vaporized high-temperature plasma material (liquid material) is expanded in the direction of the discharge region. 1 The optical axis of the laser beam emitted by the laser source 23a and the power of the first laser beam 23 are adjusted. -90- 200908815 Here, the distance between the discharge field and the front end of the capillary 50b is a high-temperature plasma raw material that is vaporized by the laser beam in the direction of the discharge field, and reaches the discharge field with a predetermined spatial density distribution. The mode is set. Further, the liquid material supplied to the tip end of the capillary 50b is moved from the liquid material bus line 50a by the capillary phenomenon, so that it can be continuously supplied to the predetermined irradiation position of the raw material laser beam 23. Further, in the third modification shown in Fig. 21 and Fig. 22, the first electrode 1 1 and the second electrode 1 21 of the columnar electrode are used. The first electrode 1 Γ and the second electrode 12' are disposed only at a predetermined distance, and are connected to the pulse power generator 8. Of course, a rotating electrode can also be used as the electrode. Further, as shown in Fig. 21 and Fig. 2, in the configuration of the third modification, the tip end of the capillary 5 Ob supplied with the liquid material is a space on a plane perpendicular to the optical axis, and the first laser beam is emitted. The bundle 23 is irradiated with a liquid material supplied to the tip end of the capillary 50b disposed at the above position. Therefore, the high-temperature plasma raw material (liquid raw material) after gasification does not expand toward the EUV condenser 2. Therefore, the irradiation of the laser beam by the raw material of the high-temperature plasma raw material and the debris generated by the discharge occurring between the electrodes are hardly performed for the EUV condensing mirror 2. (4) Gasification raw material discharge nozzle As described above, in the present invention, the high-temperature plasma raw material is irradiated with the first energy beam (raw material energy beam) 23 to be vaporized. The vaporized high temperature plasma material is expanded at a predetermined rate. By appropriately setting the supply position of the raw material for the discharge region -91 - 200908815, the first energy beam 23 is supplied with the irradiation energy of the first energy beam 23 in the irradiation direction of the raw material, etc. Gasified high temperature plasma raw materials. Further, by the above setting, the spatial density distribution of the high-temperature plasma raw material vaporized in the discharge region can be set to a predetermined distribution. At this time, it is preferable that the high-temperature plasma raw material which is expanded in the direction of the discharge by the irradiation of the first energy beam is as large as possible to reach the discharge field. If the high-temperature plasma raw material other than the discharge region is too large, the extraction efficiency of EUV radiation from the supplied high-temperature plasma raw material is lowered, which is not preferable. Further, a part of the high-temperature plasma raw material that has reached the discharge field is likely to be deposited as a chip with low temperature in the EUV light source device. Thus, as shown in Fig. 23, the tubular nozzle for discharging the raw material may be attached to the irradiation position of the first energy beam 23 of the high-temperature plasma material. Fig. 23 is a view showing the use of the tubular nozzle. As shown in Fig. 23(a), the first energy beam 23 is a through hole that passes through the tubular nozzle 60a. When the first energy beam 23 passing through the tubular nozzle 60a is irradiated to the high-temperature plasma raw material 2 1 ', the raw material is vaporized. As shown in Fig. 23(b), the vaporized raw material 2Γ is ejected from the tubular nozzle 6〇a through the tubular nozzle 6〇a. The vaporized raw material 2 喷 ejected from the tubular nozzle 60a is restricted by the injection angle of the tubular nozzle 60a. Therefore, it is possible to supply a gasification raw material having good directivity and high density to the field of discharge. Further, the shape of the tubular nozzle is not in the shape of a straight pipe as shown in Fig. 23. For example, as shown in the figure of Fig. 24, the shape of the high-speed jet nozzle in which a narrow portion is provided in a part of the inside of the nozzle may be as shown in Fig. 24 (a), and the first energy beam 23 is The through hole of the high speed injection nozzle 60b is passed. When the first energy beam 23 passing through the high-speed jet nozzle 60b is irradiated to the high-temperature plasma material 2 1, the raw material is vaporized. Here, since the narrow portion 62 is provided inside the high-speed jet nozzle 60b, the space between the narrow portion 62 and the portion irradiated by the first energy beam 23 of the high-temperature plasma material 21 is the 24th ( b) In the pressure rising portion 63 of the figure, the pressure is rapidly increased by the vaporized raw material. Further, as shown in Fig. 24(b), the vaporized raw material is accelerated from the open portion of the narrowed portion 62, and is ejected as a high-speed gas flow excellent in directivity. Here, the jet direction of the high-speed gas stream depends on the direction of the high-speed jet nozzle 60b. That is, the progress direction of the vaporized raw material 21 is not dependent on the incident direction of the first energy beam 23 with respect to the high temperature plasma raw material 21. Further, since the opening of the narrowed portion 62 has a small sectional area, if the first energy beam 23 is not irradiated to the high-temperature plasma raw material 2 1 for a long time, the high-temperature plasma raw material 21 is solidified, and the opening is also made Occlusion. Therefore, as shown in Fig. 24(e), the high-temperature plasma raw material 21 may be heated in the high-speed injection nozzle 60b, and the high-speed injection nozzle 60b may be heated by the heater 64 or the like. The tubular nozzle 60a shown in Figs. 23 and 24 and the high-speed jet nozzle 60b are applicable to the above-described embodiment or each modification. However, the -93-200908815 tubular nozzle 60a and the high-speed jet nozzle 60b' are as close as possible to the high-temperature electric paddle material 21, which is more effective. In particular, since the high-speed injection nozzle 60b is required to constitute the pressure rising portion 63, the portion of the high-speed injection nozzle 60b that is irradiated by the narrow energy portion 23 and the first energy beam 23 of the high-temperature plasma material 2 1 is irradiated. The space between them is as good as possible as a space that is airtight. For example, as shown in Fig. 25, it is preferable to integrally form the raw material storage unit 60c that accommodates the high-temperature plasma raw material 2 1 and the raw material supply unit 60 of the high-speed injection nozzle 6 0 b. Further, the rectifying mechanism is not limited to the above examples. For example, in the solid high-temperature plasma raw material 21, as shown in Fig. 26, the concave portion 6 1 a may be formed in advance at a position where the laser beam 23 is irradiated. When the laser beam 2 3 is irradiated to the concave portion 6 1 a of the high-temperature plasma raw material 2 1 , the high-temperature plasma 21 is vaporized to generate the low-temperature plasma gas 2 1 ·. Here, the low-temperature plasma gas 21' discharged from the concave portion 61a is restricted in the ejection angle by the wall nozzle of the concave portion 8a. Therefore, it becomes possible to selectively supply the low-temperature plasma gas flow having good directivity to the discharge channel continuously. (5) Operation of the EUV light source device according to the modification of the above-described embodiment In the above various modifications, the high-temperature plasma material is continuously supplied to the irradiation position of the first laser beam (field laser beam) 23 . Therefore, the operation example of the EUV light source device of the above-described modification is somewhat different from the operation example of the EUV light source device of the above-described embodiment. -94-200908815 The operation of the E U V light source device will be described below with respect to the first modification. Fig. 27 and Table 28 are flowcharts showing the operation of this embodiment, and Fig. 29 is a timing chart hereinafter. The operation of this embodiment will be described with reference to Figs. 27 to 29. Further, 'the present modification and the previously described embodiment' are not greatly different in their operation, and therefore, the same portions as those described in the above-mentioned drawings 13 to 15 are briefly explained. . The control unit 26 of the E U V light source device stores the time data Δtd, Ati, and Atg as described above. Further, as described above, Atd is the timing (time Td) of the switching means input from the trigger signal to the pulse power supply means, and the switching means is in the on state and the time between the electrodes reaches the critical value 値Vp. The time when the current flowing between the electrodes reaches a critical time 値Ip, At g is from the timing at which the first laser beam is irradiated to the raw material until the spatial density distribution reaches a predetermined distribution of the vaporized raw material to reach the discharge. The time until the field. In addition, the relationship between the voltage V and the time Atd obtained by experiments or the like in advance is stored as a table, and the timings of the above-described correction time α, β, and the switching means output from the main trigger signal to the pulse power supply means are memorized. The delay time dl until the switching means becomes the timing of the conduction. First, the candidate command from the control unit 26 of the EUV light source device is transmitted (step S301 in Fig. 27, S401 in Fig. 29), and as described above, the vacuum exhaust devices 4, 5 of the command waiting command are The gas supply unit 1 3 , 1 4 and the like start to operate. Thereby, the discharge space 1 a becomes a vacuum atmosphere -95-200908815. Further, a buffer gas and a cleaning gas are supplied in the condensing space lb, and the condensing space 1 b reaches a predetermined pressure. Further, the first electric motor 2 2 a and the electric motor 22b operate to rotate the first rotating electrode π and the second electrode 12. Further, the reel 30e is rotated by the drive mechanism 30d, and is sent out from the reel 30a to be in a standby state (S27, S302, S402 of Fig. 29). The control unit 26 of the EUV light source device is a control f transmission completion signal of the exposure device (steps S305 and 29405 of Fig. 27). The control unit 26 of the EUV light source device is controlled by the exposure device. The light-emitting command (step S 3 06, page 29 5406 of Fig. 27). After the standby state is realized, the control unit 26 of the EUV light source device transmits the electric control signal to the charger CH of the pulse power generator 8. The control signal is formed, for example, by a discharge start timing data signal, and the charging voltage signal of the main charger C0 is also included in the above charging control. The control unit 26 of the EUV light source device refers to the charging voltage data of the main capacitor C0 in the table in which the relationship between the stored radiation intensity and the charging voltage of the main capacitor C0 is referred to as described above, and the charging voltage data signal for the main power C0 is included. The charge control signal is sent to the charger CH of the pulse generator (steps S307, 295407 of Fig. 27). The charger CH is a step S308) of charging the main capacitor C0 as described above. In the second rotation, the charge map of the ¢27 diagram of the figure is charged and charged to the signal EUV for the container power map (after the -96-200908815, after the control unit 26' of the EUV light source device starts to operate, it is determined Whether the initial EUV light is generated (referred to as the first pulse) (step S3 09 of Fig. 27), and if it is the first pulse, the process proceeds from step S309 to step S3 1 0. Also, when it is not the initial pulse, then In step S3, the control unit 26 of the EUV light source device calculates the timing of sending the first trigger signal to the first laser control unit 23b that controls the operation of the first laser source 23a. The second trigger signal of the second laser control unit 24b that controls the operation of the second laser source 24a is sent. When the first pulse is not possible, the feedback is corrected as described above, based on the time data Δtd memorized in advance. Δ ti, A tg, d 1 , α, β determine the timing. That is, as described above, the timing Td' of the switching means for outputting the main trigger signal to the pulse power supply means is used as a reference, from the above (11) Formula (5) The second timing control unit 24b that controls the operation of the first laser source 23a, the first trigger signal of the first laser beam control unit 23b, and the second laser control unit 24b that controls the operation of the second laser source 24a. The timing T2 of the second trigger signal is transmitted (S408 in FIG. 29). The first laser beam is irradiated by the timing Td of the switching means for inputting the main trigger signal to the pulse power supply means. The time τ 1 and T 2 of the beam and the second laser beam. Then, the control unit 26 of the EUV light source device is after the timing of the charger charging stabilization time tst until the charging of the main capacitor C0 is stabilized. The main trigger signal is transmitted to the pulse power supply means -97-200908815 means. The timing at this time is taken as Td' (step S311 of Fig. 27, S409 of Fig. 29). The control unit 26 of the EUV light source device is The timing of sending the first trigger signal to the first laser control unit 23b obtained by the equation (5) (1 1 ) in the equation (5) (1 1 ) is based on the timing Td' of the main trigger signal. When the second trigger signal of the second laser control unit 24b is sent out The machine T2' transmits the first trigger signal and the second trigger signal to the first laser control unit 23b and the second laser control unit 24b (step S312 of Fig. 27, S413, S417 of Fig. 29). Further, as described above, the control unit 26 of the EUV light source device measures the voltage counter until the output of the main trigger signal is started so that the voltage between the electrodes reaches the threshold 値Vp, and the measurement starts at the output of the second trigger signal. The current counter that causes the discharge current to reach the critical threshold pIp is operated (step S313 of Fig. 28, S410, S412 of Fig. 29). 如 Again, as described above, the voltage counter and the current counter are for outputting the main trigger signal. After the 'time between the electrodes reaches the critical 値Vp' and the second trigger signal is output, the time until the discharge current reaches the critical 値ϊρ is made constant and the feedback control is used. That is, the sending timing T1' of the i-th trigger signal and the sending timing T2 of the second trigger signal are the first first time (the first pulse), as described above, according to the equation (5)(11). After the second time, the control unit 26 of the EUV light source device is controlled by a voltage (not shown) based on the voltage counter and the count of the current counter 修正 the corrected number 値 to determine the above equation (5) (11) ° -98 - 200908815 The monitor detects the timing at which the voltage between the electrodes reaches the critical threshold pVp, stops the voltage counter, and detects the timing at which the current reaches the critical threshold 藉Ip by the current monitor (not shown), and stops the current counter (step of Fig. 28) S314, S412, S416 of FIG. 29) Here, in step S31, when the main trigger signal is sent at the timing Td1, the delay time d1 elapses after the main trigger signal is input to the switching means of the pulse power supply means. Thereafter, the switching means (for example, IGBT) is turned on (S409, S410 of Fig. 29). When the switching means is turned on, the voltage between the first rotating electrode 11 and the second rotating electrode 1 2 rises, and after the time Atd, the voltage between the electrodes reaches the critical 値Vp. As described above, the threshold 値Vp is the voltage 时 when the number of discharge currents flowing when the discharge occurs is equal to or greater than the threshold 値Ip (S410 and S411 in Fig. 29). As described above, in step S3 1 2, the second trigger signal is sent to the second laser control unit 24b at the timing T2% according to the equation (5). As a result, 'the second laser beam (starting laser beam) 24 is irradiated in the discharge field in the timing T2 after the timing at which the voltage between the electrodes reaches the critical 値Vp (Td + Atd ) (S413 of Fig. 29) , S414). The second laser beam 24 is irradiated in the discharge region and starts to discharge in the discharge region. After the discharge is started, after the Ati, the magnitude of the discharge current is made to reach the above-described critical 値Ip (S414, S415 of Fig. 29). This critical 値Ip is the lower limit of the discharge current 値 necessary for obtaining EUV radiation of a predetermined intensity. -99- 200908815 As described above, in step S312, the first trigger signal is sent to the first laser control unit 23b in accordance with the timing ΤΙ' of the equation (11). As a result, the timing T1 and the first laser beam (raw material laser beam) 23 in the period of (T2 + Ati-Atg ) to (T2 + Ati + Atp - Atg ) are irradiated (S415 of Fig. 29, S417, S418) ° That is, the control unit 26 of the EUV light source device transmits the main laser beam in step S3U, and transmits the result of the first trigger signal and the second trigger signal in step S312, and discharges The position of the channel is defined at the specified position. Further, in the discharge channel whose position is defined, the spatial density distribution is a discharge necessary for the EUV emission of a predetermined intensity in order to obtain the discharge current in a state where at least a part of the vaporized raw material of the predetermined distribution reaches the discharge channel. The discharge occurs in a manner in which the lower limit of the current 値 is equal to or higher. Thereby, plasma is formed, and when the plasma is heated and excited by the pulsed large current flowing through the plasma to be high-temperature, EUV radiation having a wavelength of 13.5 nm is generated from the high-temperature plasma (Fig. 28) Step S315, S419 of Fig. 29). As described above, the EUV radiation emitted from the plasma is condensed by the oblique incidence type EUV condensing mirror 2 disposed in the condensing space 1b by the opening provided in the partition wall 1 C and the wheel type collector 3 The EUV light extraction unit 7 provided in the chamber 1 is guided to an illumination optical system of an exposure apparatus (not shown).

After the initial EUV radiation is ended as described above, the process returns to step S306 to wait for the light-emitting command from the exposure device. After the received light-emitting command, the process proceeds to step S309 via steps S307 and S308 described above. The next EUV-100-200908815 radiation is not the first pulse, so S3 16 is shifted from step S109. In step S316, the number of the pressure counters and the number of current counters of the control unit 26 of the EUV light source device are used as a reference, and the first touch transmission timing for the first laser control unit is performed by the equation 20) ( 2 1 ). The feedback calculation of the second trigger signal transmission timing T2' of the second control unit that controls the operation of the second laser source (step S316 of the stool, S408 of Fig. 29). The control unit 26 of the EUV light source device determines the first trigger signal for the first laser control unit 2 3 b by the following equation, in consideration of the correction in step S3 16 by the following equation: Τ1', the timing T2' of the second trigger signal of the second thunder portion 24b that controls the operation of the second laser source 24a (S27, S317, S408 of Fig. 29). T2 'two Td' + d 1 + Atd +α + t vcal ·· (24)

Tl,=:Td + dl+(Atd-Ati-Atg) + (a + P) + (tvcal+tical) The control unit 26 of the EUV light source device is stable in charging of the charger until the main capacitor C 0 is stabilized. After the time tst, the main trigger signal is sent. The timing at this time is taken as step S318 of the Td1! diagram and S409 of the 29th figure. Further, the timing T d ' of the segment in which the main trigger signal is transmitted to the pulse power supply means is used as the reference, and the first thunder is used as the reference with the timing Td' obtained by the equation (2 4 ) (25) The sending timing of the first trigger signal of the shot control unit Τ1', and the step of sending the second trigger signal to the second laser control unit 24b for controlling the operation of the second laser is performed by the above (the laser control of the signal; The figure is obtained as a step of the base-feed-time-injection control... (25) charging timing, the 27th exchange hand) 23b source 24a is output timing -101 - 200908815 T21, the first trigger signal, the second trigger signal The signal is transmitted to the first laser control unit 23b and the second laser control unit 24b (step S3 19 of Fig. 27, S414 and S417 of Fig. 29). Then, the process proceeds to step S 3 1 of Fig. 28. 3. As described above, the voltage counter until the voltage between the electrodes reaches the critical threshold pVp is operated at the start of the main trigger signal, and the discharge current is measured to the critical value at the beginning of the second trigger signal. The current counter up to Ip is activated (Fig. 29 S410, S412) Then, the voltage monitor is detected by the unillustrated voltage monitor to stop the voltage monitor, and the voltage monitor is stopped. Further, the discharge current is detected by a current monitor not shown. When the timing of reaching the critical threshold Ip is reached, the current monitor is stopped (step S 3 1 4 of FIG. 28, S412, S416 of FIG. 9). Here, in step S311, when the timing is Τ (Γ送出出The main trigger signal is turned on as described above (S409, S410 of Fig. 29), and after the time Atd, the voltage between the electrodes reaches the critical threshold pVp (S410, S411 of Fig. 29) ° in step SH2. 'At the timing T2' according to the equation (5), the second trigger signal is sent to the second laser control unit 24b, and in the timing T2 after the timing at which the voltage between the electrodes reaches the threshold 値Vp (Td + Md ), The second laser beam (starting laser beam) 24 is irradiated in the discharge field (S413, S414 in Fig. 29). The second laser beam is irradiated in the discharge field, and discharge starts in the discharge field. After the start of discharge, after Ati, the discharge current reaches the upper -102-200908815 The threshold 値Ip (S414, S415 of Fig. 29). As described above, in step S312, the first trigger signal is sent to the first laser control unit 2 in accordance with the timing T1· of the equation (11). b. As a result, the timing T1 and the first laser beam (raw material laser beam) 23 in the period of (T2 + Ati-Atg) to (T2 + Ati + Atp-Atg) are irradiated (Fig. 29) S415, S417, S418). Thereby, in the steps S318 and S319', the control unit of the EUV light source device transmits the result of each of the trigger signals, and the position of the discharge channel is defined at the predetermined position. Further, in the discharge channel whose position is defined, the spatial density distribution is a discharge necessary for the EUV emission of a predetermined intensity in order to obtain the discharge current in a state where at least a part of the vaporized raw material of the predetermined distribution reaches the discharge channel. The discharge occurs in a manner in which the lower limit of the current 値 is equal to or higher. The discharge occurs between the edge portions of the peripheral edge portions of the first rotating electrode 11 and the second rotating electrode 12, and plasma is formed, and the plasma is heated and excited by the pulsed large current flowing through the plasma to become high temperature. Then, EUV radiation having a wavelength of 13.5 nm is generated from the high temperature plasma (step S3 I 5 of Fig. 28, S419 of Fig. 29). The EUV radiation emitted from the plasma is collected by the oblique-incident EUV condensing mirror 2 disposed in the condensing space 1 b through the opening provided in the partition wall 1 c and the wheel-type collector 3, and is provided. The EUV light extraction unit 7 of the chamber 1 is guided to an illumination optical system of an exposure apparatus (not shown). Hereinafter, during the period in which the exposure process is continued, the process between steps S 3 06 to S3 15 is repeated. When the exposure process is completed, the process ends after steps S315 - 103 - 200908815. By operating as described above, by irradiating the first laser beam 2 3 as described above, the spatial density distribution of the vaporized raw material supplied to the discharge region is set to generate EUV radiation as efficiently as possible. . Further, by concentrating the second laser beam 24 at a predetermined position in the discharge area, the position of the discharge path is defined at a position at which the laser focus is set. Therefore, the positional stability of the occurrence point of EUV radiation can be improved. Since the irradiation timing of the first laser beam 23 and the irradiation timing of the second laser beam 24 are set as described above, the spatial density distribution is at least a part of the predetermined distribution of the vaporized material reaching the discharge channel. When the discharge current is equal to or higher than the lower limit of the discharge current 必需 necessary for EUV emission of a predetermined intensity, discharge occurs. As a result, EUV radiation with excellent efficiency can be achieved. Further, after the output of the main trigger signal, the time until the voltage between the electrodes reaches the critical threshold 値Vp and the output of the second trigger signal, the time until the discharge current reaches the critical threshold 値Ip becomes constant, and the feedback control is performed. Therefore, even if the operation of the semiconductor switching element using the solid-state switch SW as the switching means of the pulse power supply means is uneven, it is possible to reliably achieve EUV radiation with excellent efficiency. (6) Adjusting the irradiation It is also possible to adjust the irradiation of the first energy beam 2 3 so that the discharge is likely to occur between the discharge electrodes. Hereinafter, measures for improving the startability of such discharge will be briefly described. -104-200908815 As an example, the procedure for adjusting the irradiation is described in the "EUV light source device of the embodiment shown in Figs. 9 and 10". The timing chart when the adjustment illumination is not performed in the 30th chart. As described above, in the EUV light source device of the above-described embodiment, the first laser beam (raw material laser beam) 23 for supplying the raw material and the second energy beam for the discharge start are appropriately set (starting) When the irradiation timing of the laser beam 24 is used, at least a part of the vaporized high-temperature plasma raw material having a predetermined spatial density distribution reaches the discharge field, and the discharge current set in the discharge field is set to a predetermined threshold.値 Above. In the present procedure, the first laser beam 23 is irradiated once before the first laser beam (raw material laser beam) 23 appropriately set by the irradiation timing of the second laser beam 24 is irradiated. Above the raw materials in high temperature electric paddles. In the example shown in Fig. 30, the first laser beam 23 is irradiated three times before the first laser beam 23 appropriately set with the irradiation timing of the second laser beam 24. Irradiation of such a laser beam is referred to as adjustment illumination. If the adjusted irradiation is carried out, the vaporized high-temperature plasma raw material reaches the discharge field. The first laser beam (raw material laser beam) 23 that is adjusted to be irradiated has no correlation with the second laser beam 24 for starting the discharge, and the second laser beam 24 is not irradiated. A part of the vaporized high-temperature plasma raw material that has reached the discharge region is attached to the first discharge electrode 11 and the second discharge electrode 12 . In this state, when the second energy beam 2 3 is irradiated at a predetermined position in the discharge region, it adheres to a part of the high-temperature plasma material of the first discharge electrode 11 and the second discharge electrode 12 located in the vicinity of the discharge region. It was gasified by -105- 200908815. The vaporized raw material contributes to the discharge, so that discharge is reliably generated between the discharge electrodes. That is, the startability of the discharge is improved. Further, a part of the high-temperature plasma material to be adhered to the discharge electrodes n and 12 is vaporized. At least a part of the second energy beam 24 is required to be irradiated to the high-temperature plasma material of the discharge electrode 1 1,1 2 . . 3. Long Pulsed The following description will be made on the long pulse of EUV radiation of the present invention. In the following, (1) a basic configuration example of an EUV light source device embodying the EUV generating method of the present invention, (2) an EUV generation sequence of the present invention, and (3) an irradiation timing of an energy beam (laser beam), ( 4) raw material supply system, (5) rectification mechanism, (6) electrode position, high-temperature plasma raw material supply position 'energy beam (laser beam) irradiation position relationship' (7) energy beam for raw material gasification The energy, (8) specific structural examples are explained. Hereinafter, the laser beam will be described as an example of the energy beam, but the energy beam may be an electron beam or the like. (1) Basic configuration example of an EUV light source device embodying the EUV generating method of the present invention First, a basic configuration example will be described. Fig. 3 is a view showing a basic configuration of a long pulsed EUV light source device according to the present invention. In the same figure, a first electrode 11 - 106 - 200908815 and a second electrode 12 are provided inside the cavity 1 of the discharge vessel. . For example, the first electrode 11 is a cathode, and the second electrode 12 is an anode. The second electrode 12 is grounded. That is, a high voltage of a negative polarity is applied between the electrodes. A pulse power supply means 15 is connected to the two electrodes. The pulse power supply means 15 is for flowing a long pulse width between the electrodes, for example, a PFN (Pulse Forming Network) circuit. Further, a high-temperature electric paddle material 21 is provided outside the discharge region in the vicinity of the pair of electrodes. As the high-temperature plasma raw material 21, for example, a metal such as tin (Sn) or lithium (Li) is used. These are either solid or liquid. Fig. 31 schematically shows an example in which the high-temperature plasma raw material 21 is a solid metal. In order to generate a low temperature plasma (gasified high temperature plasma material), a laser source 23a is used. The laser beam 23 emitted by the laser source 23a is a high-temperature plasma material 21 that is guided to the inside of the chamber 1 and is irradiated to a solid or liquid. The irradiation energy of the laser is a high-temperature plasma raw material that vaporizes solid or liquid, but is an energy that does not rise to an electron temperature, for example, a range of l 〇 8 W/cm 2 to 1 019 W/cm 2 . When the high-temperature plasma material 21 is irradiated with the laser beam, at least a part of the high-temperature plasma material 21 is vaporized, and the low-temperature plasma 21' is ejected. By appropriately setting the conditions of the irradiated laser beam, for example, from the solid high-temperature plasma raw material 2 1 to about 10 μ5, the vaporized high-temperature plasma raw material (low-temperature plasma gas 2 1 ' is continuously ejected. ). As described above, the low-temperature plasma gas is a discharge channel formed in advance between the electrodes by a state in which the ion density in the plasma is about 1 〇 17 to 102 C) cnr 3 and the electron temperature is about lev or less. . -107- 200908815 And the 'discharge channel is thinned by the self-magnetic field of the discharge current. The irradiation of the laser beam 'discharged from the solid material or the liquid material' is performed while expanding in a three-dimensional direction. Therefore, the low-temperature plasma gas discharged from the hair-emitting material 21 is rectified by the illustration of the rectifying mechanism' to be a stable flow excellent in directivity. Also, an example of the structure will be explained later. (2) EUV generation order of the present invention The generation method of the present invention will be described using the timing chart shown in Fig. 3 . As an example, the multi-self-bundling method is taken as an example. First, in the switching means (for example, igBT) input (Td) for applying pulse power to the pair of electrodes 1 1 and 2, the switching means (Td) has a trigger signal [32(a)]. 〇With this 'the voltage between the electrodes will rise [Fig. 32(b)]. When the voltage reaches a certain threshold 値Vp, the timing Tl (=Td + Atd) is discharged [Fig. 32(c)]. The occurrence of discharge is performed by the operation of the discharge starting means shown in Fig. 31. The threshold 値Vp is a voltage 时 when the discharge current 流动 flowing during discharge becomes a critical 値Ip or more (or Ip2 or more in the non-beam mode). That is, when the discharge is less than 値V p , the peak of the discharge current is not reached to Ip or Ip2. The discharge current is started to flow between the electrodes by the timing T1 to form an electric passage. In addition, in the timing of the Ati (ΤΙ +Δίί), the electric discharge of the material is high, and the pulse timing of the EUV of the flow machine is such that the occurrence of a thumbnail occurs. The critical boundary has a discharge 値-108- 200908815 is reaching the critical point.値Ip. As described above, the critical enthalpy Ip is such that the compression pressure of the self-magnetic field according to the current is PB, and when the pressure of the plasma is Pp, it is set to PB "Pp" (formula (104) above). That is, the low temperature plasma gas can be made into a sufficiently compressed current enthalpy by the self magnetic field. Further, the above-mentioned critical enthalpy Ip also has an electron temperature of a low-temperature plasma gas (the ion density in the plasma is about 1 〇 17 to l 〇 2 () ciir 3 and the electron temperature is about lev or less), and can be heated to 20 〜 3 Current of energy of OeV or above. Further, in the timing (Tl+Ati), the diameter of the discharge channel in the flow discharge region is sufficiently small. After this timing (Τ1+ΔΗ), at least a part of the low-temperature plasma gas having an ion density corresponding to the EUV radiation condition and a low electron temperature selectively reaches the fine discharge channel, and the laser beam is irradiated in the arrangement. High-temperature plasma raw materials outside the discharge field [Fig. 3 2 (d)]. The timing from when the laser beam is irradiated to the high-temperature plasma material until at least a portion of the low-temperature plasma gas reaches the discharge channel is Atg, then at the timing (Tl+Ati-Atg) or later Machine T2, the laser beam is irradiated with high temperature plasma material. In Fig. 32, the case where the timing T2 = T1 + Ati - Atg is shown. From the timing (Tl+Ati = T2 + Atg) after the time r heat, the discharge acts on the low-temperature electric propeller gas and the electron temperature reaches 20~30eV to become the high-temperature plasma, and the EUV emission from the high-temperature plasma is started. 32 (e) Figure). The low-temperature plasma gas having the ion density corresponding to the EUV release-109-200908815 emission condition and the low electron temperature is continuously supplied in the fine discharge channel, thereby repeating the self-beam effect or the closing effect according to the self-magnetic field. . Therefore, the diameter of the fine discharge passage is a pulse-like behavior indicating a thinning or widening, but is relatively maintained in a small state. That is, the self-beam of the low temperature plasma is repeatedly performed, and the EUV radiation is continued. The EUV radiation generated in the discharge field is reflected by the EUV condensing mirror 2, and is emitted from the EUV light extraction unit 7 to an irradiation unit (not shown). Here, the DDP method using a conventional self-beam effect is used. The LAGDPP mode 'maintains EUV emission time is, for example, 200 ns or less, so the time to continue the current 値 to the discharge channel of I p is the timing at which a part of the low-temperature plasma gas reaches the fine discharge channel (Tl+Ati = T2 + Atg) After continuing (20 0 ns + r heat) or more, a discharge circuit composed of the pulse power supply means 15 and the pair of electrodes (the first electrode 11 and the second electrode 12) is set, and a conventional self-beam effect is utilized. The DPP method, the LAGDPP method, has become a long pulse that can achieve EUV radiation. In the DPP method using the conventional self-beam effect, in the LAGDPP method, the continuation time of the discharge channel is at most 1 μ3 or less, and the time from the initial stage of the beam to the EUV emission (the period A of the first map) is The longest is below 2 0 ns. According to the results of the test by the inventors, it has been found that, at least when the continuation time of the discharge channel is at least i, the time at which the discharge channel of the current 値Ip or more or ΙΡ2 or more can continue can be surely made. 2 0 0ns is still a long time. In other words, when the continuation time of the discharge channel is set to 1 μ3 - 110 - 200908815 or more, the continuation time of EUV radiation can be made to be longer than the continuation time (200 ns) of the conventional EUV radiation. In addition, when the threshold 値 is set to Ip2 in the case of the non-self-beam method, the long-pulse of the EUV radiation is realized by the same configuration as described above, and thus detailed description thereof will be omitted. In the present invention, in the method of the long pulse method of E U V radiation of Patent Documents 6 and 7 for controlling the electric current waveform of the electric current in the self-bundling state of the plasma, it is not necessary to flow a large current in the discharge space. Moreover, in order to maintain the self-beaming effect, it is not necessary to change the deformation of the plasma current I as shown in Fig. 40 (a), so the discharge current (plasma current) waveform of the present mode has no pole-changing point (3) energy shot. Irradiation timing of the beam (laser beam) In the above-described EUV generation sequence, after the discharge current 値 reaches the timing of the critical 値Ip, at least a part of the low-temperature plasma gas reaches the fine discharge channel, and the laser beam is set. The timing of irradiation to high temperature plasma raw materials. Here, consider the case where at least a part of the low-temperature plasma gas reaches the discharge channel (case A) before the discharge current 値 reaches the critical 値Ip after the discharge occurs, or before the discharge occurs, the low-temperature plasma gas At least a portion, after discharge, reaches the field where the discharge channel is formed (case B). In Case A or Case B, until the discharge current 値 reaches the critical threshold 値Ip, the low-temperature plasma cannot be sufficiently heated, and as a result, the ratio of the low-temperature plasma that does not contribute to EUV luminescence is -111 - 200908815. Increase, but will reduce EUV radiation efficiency. Further, in the case A or the case B, in the period until the discharge current 値 reaches the critical 値Ip, the field in which the discharge channel is formed after the discharge is used as the low temperature of the high-temperature plasma raw material selectively supplied as the steady flow. The electric paddle gas expands to reduce the density. Therefore, the density of the high-temperature plasma material in the discharge field is close to the initial condition of Fig. 38. In this state, the diameter of the discharge channel is thickened. Therefore, in order to make the discharge channel fine and become a high-temperature plasma, a large current is required as a discharge current. In particular, in case B, a low-temperature plasma gas is supplied before discharge, and thus a discharge channel is formed by gas discharge of a high-temperature plasma raw material gas which is reduced in density by expansion, and the diameter of the discharge passage is a ratio A is still thick. Therefore, in order to thin the discharge channel, the initial plasma is made into a high-temperature plasma by the self-beam effect. As with the DPP method, a certain amount of power is required, and a high-speed short-pulse current pulse is required (close to the first 3 8 Figure of the path 2). In the present invention, as described above, the discharge circuit is formed in such a manner that the continuation time of the discharge path is made longer, and thus it is difficult to achieve the required current pulse in the case B extreme ultraviolet light source device. Therefore, after at least the start of discharge (Case A), preferably, as shown in FIG. 3, after the discharge current 値 reaches the timing of the critical 値Ip, at least a part of the low-temperature plasma gas reaches the mode of the fine discharge channel, It is important to set the timing at which the laser beam is irradiated to the high temperature plasma material. -112- 200908815 (4) Raw material supply system As described above, the present invention irradiates an energy beam such as a laser beam to a high-temperature plasma raw material to generate an ion density having an EUV radiation condition and a low electron temperature. The plasma gas (the ion density in the plasma is about 1017 to 102 () Cm_3, and the electron temperature is about leV or less), and the low-temperature plasma is supplied to the discharge field. In Fig. 3, the high-temperature plasma raw material is exemplarily shown as a solid metal. However, as described above, the high-temperature plasma raw material may be in a liquid state. As a configuration example of a raw material supply system in which a low-temperature plasma gas is supplied to a discharge field using a solid high-temperature plasma raw material, for example, it is schematically shown in FIG. 31, and a solid metal (for example, Sn) can be disposed in a discharge field. The laser beam is illuminated by the nearby field. As another example, a high-temperature plasma material that is linearly shaped is used to use two sets of reels, and a low-temperature plasma gas generated when a laser beam is irradiated is supplied to a space that can reach a predetermined field, and a laser beam is used. Irradiation on the linear high temperature plasma raw material. On the other hand, as a configuration example of a raw material supply system that supplies a low-temperature electric propeller gas to a discharge passage using a liquid high-temperature plasma raw material, for example, a liquid high-temperature plasma raw material is formed into a droplet shape, and a laser beam is irradiated. The generated low-temperature plasma gas is supplied dropwise to a space that can reach a predetermined area, and when the droplet-shaped high-temperature plasma raw material reaches the space, the laser beam is irradiated to the droplet-shaped high-temperature plasma raw material. . Further, as an example of using a solid high-temperature plasma raw material, as described in Patent Document 6, it is also conceivable that a solid high-temperature plasma raw material (for example, Li)-113-200908815 constitutes an electrode body, and the laser beam is irradiated. This electrode generates a low-temperature plasma gas and supplies the low-temperature plasma gas to the discharge channel. Further, as an example of using a liquid high-temperature plasma raw material, the structure described in Patent Document 4 is considered. That is, the electrode is used as a rotating electrode structure, and a liquid high-temperature plasma raw material of a heated metal melt is housed in a container. Further, a part (peripheral portion) of the rotating electrode is placed in the container in which the liquid high-temperature plasma raw material is accommodated. Thereafter, the liquid high-temperature plasma raw material adhering to the surface of the peripheral portion of the electrode is transported to the discharge region by rotating the electrode. A low temperature plasma gas is generated by irradiating a laser beam onto the conveyed liquid high temperature plasma material such that the low temperature plasma is supplied to the discharge channel. However, this configuration is such that the high-temperature plasma raw material is disposed in the discharge field, and the generation of the low-temperature plasma gas according to this method and supply to the discharge channel are less desirable for the following reasons. In the configuration described in Patent Documents 4 and 6, the plasma (or neutral vapor) generated when the laser beam is irradiated onto the surface of the electrode serves as a medium to start discharge. Therefore, the supply of the low-temperature plasma gas is performed before the discharge, and the ratio of the low-temperature plasma which does not contribute to the EUV emission as described above increases, and the EUV radiation efficiency decreases. Further, since the low-temperature plasma gas is supplied before the discharge, the discharge path is formed by discharge of the high-temperature plasma material gas which is reduced in density by expansion, and the diameter of the discharge channel becomes thick. Therefore, in order to make the discharge channel fine and form a high temperature plasma, it becomes a current that requires a certain amount of high power. Moreover, the low-temperature plasma gas is supplied to the discharge channel, in addition to the supply of the irradiation of the beam of 114-200908815, and the temperature rise of the driving electrode according to the progress of the discharge, so that the electrode itself (or Supply of liquid high-temperature plasma raw material attached to the electrode by evaporation. Therefore, the parameters of the low-temperature plasma gas vary from time to time depending on the discharge current, and the output of the EUV radiation varies. Further, the position of the high-temperature plasma changes due to the fluctuation of the discharge path during discharge, and the size of the high-temperature plasma increases in appearance. The above inconvenience is that the high-temperature plasma raw material and the electrode are integrated, and the supply of the low-temperature plasma gas is caused by both the irradiation of the laser beam and the discharge current (electric current). Therefore, in the present invention, the high-temperature plasma raw material and the electrode are made different, so that the supply of the low-temperature plasma gas depends only on the irradiation of the laser beam, and is independent from the discharge current. That is, as shown in the configuration example of FIG. 31 or other configuration examples (linear, droplet-shaped), the supply of the low-temperature plasma gas and the control current between the electrodes are controlled independently of each other. The way to form a raw material supply system. (5) Rectifying mechanism As described above, the low-temperature plasma gas constitutes a discharge path in which the self-magnetic field of the discharge current is selectively supplied after the discharge between the electrodes is formed. Usually, the material vapor ejected from the solid material or the liquid material by the irradiation of the laser beam is carried out while expanding in a three-dimensional direction. Therefore, when the laser beam is irradiated to the high-temperature plasma raw material of the solid or liquid to eject the low-temperature electric propeller gas, the flow of the low-temperature plasma gas ejected is rectified, and the flow of the directivity is good, and the configuration is -115-200908815. It is set such that the flow is concentrated in the vicinity of the fine discharge passage and is continuously supplied. As the rectifying means for rectifying the flow of the above-described discharged low-temperature plasma gas, those shown in Figs. 23 to 25 can be used. Further, it may be configured as shown in Fig. 26. (6) Correlation of electrode position, high-temperature plasma material position, and energy beam (laser beam) irradiation position. As described above, in the present invention, the low-temperature plasma gas reaches the discharge channel by the laser beam. . This positional relationship is shown, for example, in the above fourth figure. That is, the plate-shaped pair of electrodes 11, 12 are arranged at predetermined intervals. The discharge channel is formed in the discharge region of the space in which the pair of electrodes 11, 12 are spaced apart. The high-temperature electric paddle material 2 1 is irradiated by the laser beam 2 3 to vaporize it, and the generated low-temperature electric paddle gas 2 扩展 is expanded toward the direction in which the laser beam is incident. Therefore, the laser beam 23 is irradiated on the side opposite to the discharge region of the high-temperature plasma material 2 1 'the low-temperature electric paddle gas 2 1 ' is supplied to the discharge passage formed in the discharge region. As described above, the polymerization of atomic gas generated by the decomposition of the low-temperature plasma gas supplied to the discharge channel by the irradiation of the laser beam does not contribute to the formation of the high-temperature plasma formation or the formation of the high-temperature plasma. A part of the material is in contact with the low temperature portion in the EUV light source device as a chip and is deposited. -116- 200908815 Here, as shown in Fig. 4(b), when the high-temperature plasma raw material 2 1 corresponds to a pair of electrodes 1 1,12 which are not facing the space side of the EUV condensing mirror 2, as described above, toward the laser The low-temperature plasma gas 2 Γ ' generated by the irradiation of the beam 2 3 is expanded toward the discharge passage and the EUV condensing mirror 23, and the debris is discharged to the EUV condensing mirror 2. As shown in Fig. 4(a), the high-temperature plasma raw material 21 is disposed in a space between the pair of electrodes 112, 12 and the EUV condensing mirror 2, and a space in the vicinity of the discharge region is preferable. For the thus configured high-temperature plasma raw material 2 1, it is intended to irradiate the laser beam 2 3 to the side of the discharge region of the surface of the high-temperature plasma raw material described above, and the low-temperature plasma gas 2 Γ is discharged toward the discharge. The direction of the field expands, but does not extend in the direction of the EUV condenser 2. Further, as shown in Fig. 5, by arranging the high-temperature plasma raw material 21 in a space on a plane perpendicular to the optical axis, and arranging for the vicinity of the discharge region, the laser beam 2 is applied to the high-temperature plasma raw material. 2 1 is irradiated from a direction perpendicular to the optical axis, and the low-temperature plasma gas 2 1 ' does not expand in the direction of the Euv concentrating mirror 2 . Thus, the irradiation of the laser beam to the high-temperature plasma raw material 21 and the generation of debris generated between the electrodes 1 1 and 12 are hardly performed on the EUV condensing mirror 2. (7) The energy of the energy beam for the gasification of the raw material is as described above, after the time when the laser beam is irradiated to the high-temperature plasma raw material, until the time at which at least a part of the low-temperature plasma gas reaches the discharge channel, Atg Dependent on the position of the discharge channel and the high-temperature plasma raw material 'The direction of the laser beam to the temperature of the electric paddle material, the irradiation of the laser beam -117- 200908815 Energy, set by the appropriate setting of these parameters' is set to time. As described above, the long pulsed EUV generating method of the present embodiment generates a fine discharge channel in advance in the discharge region, and selectively supplies the ion density corresponding to the EUV radiation condition to the fine discharge channel from outside the discharge region. The low-electron temperature low-temperature plasma gas (the ion density is about 1017~102QcnT3, and the electron temperature is about leV or less) is stable. Here, the timing of the supply of the low-temperature plasma gas is that the discharge current 値 reaches the predetermined threshold. After the timing of (Ip or IP2), it is set to a low-temperature plasma gas (the ion density is about 1 〇 17 to l 〇 2 (cm_3), and the electron temperature is about lev or less) to reach the fine discharge channel. As a result, discharge is applied to the low-temperature plasma gas, and a high-temperature plasma satisfying the EUV radiation condition is formed by the path II of Fig. 9, and EUV radiation occurs. Here, the low-temperature plasma gas is supplied to the discharge path, and the EUV radiation is realized by the path of (II) in FIG. 6, so that the discharge current does not require a conventional DDP method or a large current of the LAGDPP method. EUV radiation can be achieved even if a small current flows in the discharge field. Further, even if it is conventionally practiced that the high-speed short pulse of the discharge current is not performed, the energy can be efficiently input to the electric prize. Therefore, it is possible to set a longer discharge current pulse than in the conventional case. EUV radiation is a period in which a certain degree of fine discharge path continues. Therefore, the discharge current pulse is configured to form a discharge circuit in a manner that is longer than the conventional DPP method and the LAGDPP method, and the discharge current pulse is pulsed-118-200908815, whereby the duration of the fine discharge channel can be made. Longer than conventional, the result is a long pulse of EUV radiation. In the multi-self-beam method, the critical enthalpy Ip is set to PB "Pp" as shown in the above formula (104) when the compression pressure of the self-magnetic field of the current is P B and the pressure of the plasma is P p '. That is, the critical enthalpy Ip is a current 可 which can sufficiently compress the low temperature plasma gas by the self magnetic field. Further, the above-mentioned critical enthalpy Ip is also a current 具有 which can heat the electron temperature of the low-temperature plasma gas or an energy of 20 to 30 eV or more. Here, in the timing at which the discharge current 値 becomes ip, the diameter of the discharge passage in the field of the flow discharge is sufficiently small. The self-beaming effect or the self-magnetic field closing effect is repeatedly performed by the continuous supply of the low-temperature plasma gas to the fine discharge channel. At this time, the diameter of the fine discharge passage is tapered or widened to indicate a pulse-like behavior, but is relatively kept in a small state. The self-beaming effect of such a low-temperature plasma gas or the repetition of the closing effect of the self-magnetic field is continued during the period in which the discharge current continues. As described above, in the present invention, the discharge current pulse can be made longer than that of the conventional one, and the continuous self-beam or the self-magnetic field can be maintained for a long period of time, so that long pulses of EUV radiation can be realized. (multiple self-bundling). Further, in the non-self-bundling method, the critical 値Ip2 is set to PB "Pp" as shown in the above formula (105). That is, the critical enthalpy Ip2 is a current enthalpy in which the low-temperature plasma gas (maintained at a low temperature plasma gas expansion and the ion density is not reduced) is weakly compressed by the self magnetic field. Again, the above threshold 値 -119- 200908815

Ip2 is also a current having a temperature at which the electron temperature of the low-temperature plasma gas is heated or 20 to 3 OeV or more. Here, in the timing at which the discharge current 値 becomes Ip2, the diameter of the discharge channel in the flow discharge region becomes fine. By the continuous supply of low-temperature plasma gas to the fine discharge channel, the low-temperature plasma gas is expanded while being maintained at a level that does not reduce the ion density.

In the state, it is heated to become a high-temperature plasma, and the high-temperature plasma is irradiated with EUV 此种. While maintaining the ion concentration of the low-temperature plasma gas, it is heated while the discharge current continues. As described above, in the present invention, the discharge current pulse can be made longer than the conventional one, and the heating of the low-temperature plasma can be continued, and the temperature of the plasma necessary for EUV radiation can be maintained for a long period of time, thereby realizing Long pulsed EUV radiation (non-self-bundling). Further, in the non-self-bundling method, the diameter of the discharge channel is larger than that of the multi-self-bundling method, and thus the size of the high-temperature plasma is larger than that of the multi-self-bundling method. According to the results of the examination by the inventors' experiments, it has been found that in the present invention, when the discharge channel is made at least 1 or more, the discharge current of the current 値Ip or more or Ip2 or more can be made to be surely more than 200 ns. Long. That is, when the discharge passage continuation time is set to 1 or more, the continuation time of the EUV emission can be made to be surely longer than the continuation time (200 ns) of the conventional EUV emission. As described above, the discharge current does not require a large current such as the conventional DPP method or the LAGDPP method, and it is not necessary to perform a high-speed short pulse of the discharge current. Therefore, it becomes possible to compare the heat load given to the electrode with the conventional one -120 to 200908815, and it is possible to suppress the occurrence of debris. Further, in the present invention, as in the conventional long-pulsation technique, the manner of maintaining the self-bundling state of the high-temperature plasma does not require control of the plasma current waveform, so that it is not necessary to flow a large current in the discharge space. Further, in order to maintain the self-beam effect, it is not necessary to change the waveform of the plasma current, so that high-precision current control is not required. That is, the discharge current (plasma current) waveform of this mode does not have a pole-changing point. Further, it is preferable to control the supply of the low-temperature plasma gas and the drive current of the control flow between the electrodes independently of each other to constitute a material supply system. With such a configuration, the supply of the low-temperature plasma is not affected by the discharge current (plasma current), thereby improving the stability of the EUV radiation. Further, it is preferable to arrange (or supply) the high-temperature plasma raw material in a space between the pair of electrodes and the EUV condensing mirror, and to irradiate the laser beam on the side facing the discharge region of the surface of the high-temperature plasma raw material. By doing so, the low temperature plasma gas expands toward the discharge field, but does not expand toward the EUV condenser. Therefore, it becomes a case where the debris can be suppressed from proceeding to the EUV condensing mirror. Hereinafter, a specific configuration example of the long pulsed EUV light source device will be described. As described above, the EUV radiation method of the present embodiment supplies a stable low-temperature plasma gas to a predetermined fine discharge channel, and by making the discharge current pulse width longer than the conventional one, the EUV radiation pulse is generated. Wide for growth pulse. -121 - 200908815 Therefore, the vacuum arc discharge is slowly moved to the gas discharge after the timing of the arrival of the low-temperature plasma gas. That is, a fine discharge channel for gas discharge is finally established, and a low-temperature plasma is selectively supplied to the fine discharge channel of the gas discharge. Here, the position at which the discharge channel of the gas discharge is formed is not necessarily the same as the position of the discharge channel in which the vacuum arc is formed. There is a case where the position of the gas discharge passage fluctuates as it moves from the vacuum arc discharge to the gas discharge. That is, the discharge passage of the gas discharge is formed near the position of the discharge passage of the vacuum arc discharge, but the positional stability of the gas discharge passage is not necessarily high precision. When an EUV light source is used as a light source for exposure, stability of a high EUV source is required. That is, it is required to achieve higher accuracy of the positional stability of the discharge path of the gas discharge. Fig. 3 is a view showing a state of discharge starting between electrodes in the present embodiment. In the present embodiment, at least a portion of the low-temperature plasma gas arrives at the timing of discharge starting between the electrodes. As shown in Fig. 3, a part of the low-temperature plasma gas generated by irradiating the first laser beam to the high-temperature plasma raw material reaches the discharge field, and the discharge field becomes a low-temperature plasma having a low concentration to some extent. The timing of the state in which the gas is full.起动 The second laser beam is condensed at a predetermined position in the discharge field to start the discharge. As described above, the discharge field is filled with a low-concentration low-temperature plasma gas, and thus the discharge of the timing is a gas discharge. Here, in the vicinity of the focus of the second laser beam, the conductivity is increased by -122-200908815 by electron emission. Therefore, the position of the discharge channel of the gas discharge is defined at the position where the laser focus is set. That is, the position of the gas discharge is defined by the second laser beam. As described above, in the EUV radiation system of the present embodiment, the position of the discharge channel body of the gas discharge is determined, so that the positional stability of the discharge channel of the gas discharge can be improved with high precision. (8) Embodiment of the long pulsed EUV light source device of the present invention Figs. 34 and 35 show an embodiment of an EUV light source device using the extreme ultraviolet light (EUV) generating method of the present invention. Fig. 34 is a view showing the configuration of the above EUV light source device, and EUV radiation is taken out from the right side of the same figure. Fig. 35 is a view showing an example of the configuration of the electric power supply means of Fig. 34; The EUV light source device shown in Fig. 34 is a cavity 1 having a discharge vessel. The chamber 1 has a discharge space la for inputting power into the low-temperature plasma gas described above to generate high-temperature plasma, and collecting EUV light emitted by the high-temperature plasma by the EUV light extraction portion provided in the chamber 1. 7 is guided to the EUV light condensing space lb of the illumination optical system of the exposure apparatus (not shown). The chamber 1 is connected to the exhaust unit 5, and the inside of the chamber 1 is made a reduced-pressure atmosphere by the exhaust unit. Hereinafter, the configuration of each unit will be described. (a) The discharge portion discharge portion 1a is a first discharge electrode 11 in which a metal disk-123-200908815 member is disposed via an insulating material 11?, and a second discharge electrode 12 of a disk-shaped member made of the same metal. Construction. The center of the first discharge electrode 11 and the center of the second discharge electrode 12 are disposed approximately coaxially, and the first discharge electrode 11 and the second discharge electrode 12 are fixed at positions where only the thickness component of the insulating material 110 is interposed. Here, the diameter of the second discharge electrode 12 is larger than the diameter of the first discharge electrode 11. Further, since the first discharge electrode 11 and the second discharge electrode 12 are rotatable, they are hereinafter referred to as a rotating electrode. A rotating shaft 22e of the motor 22a is attached to the second discharge electrode 12. Here, the rotating shaft 22e is attached to the center of the second discharge electrode 12 so that the center of the first discharge electrode 11 and the center of the second discharge electrode 12 are located approximately coaxially with the rotation shaft 22e. The rotary shaft 22e is introduced into the chamber 1 via, for example, a mechanical seal 22c. The mechanical seal 22c is a rotation allowing the rotation shaft 2 2 e to be maintained in a reduced pressure atmosphere in the chamber 1. Below the second discharge electrode 12, a first slider 22g and a second slider 22h made of, for example, a carbon brush are provided. The second slider 22h is electrically connected to the second discharge electrode 12. On the other hand, the first slider 22g is electrically connected to the first discharge electrode 11 through the through hole 22i penetrating the second discharge electrode 12. Further, by the insulating mechanism (not shown), insulation breakdown does not occur between the first slider 22g and the second discharge electrode 12 that are electrically connected to the first discharge electrode 11. The first slider 2 2 g and the second slider 2 2 h are electrical contacts that are slid while maintaining electrical connection, and are connected to the pulse power supply means 15. Pulse -124 - 200908815 The electric power supply means 1 5 ' supplies electric power between the first discharge electrode 1 1 and the second discharge electrode 12 via the first slider 22d and the second slider 22e. In other words, when the motor 22a is operated, the first discharge electrode 1 1 and the second discharge electrode 12 are operated, and the first slider 22g and the second slider are also passed between the first discharge electrode Η and the second discharge electrode 12 . In the piece 22h, electric power is applied from the pulse power supply means 25. As shown in Fig. 3, the pulse power supply means 15 includes a PFN circuit portion, and for example, a pulse power having a relatively long pulse width is applied between the first discharge electrode 11 and the second discharge electrode 12 under load. Further, the first slider 22g and the second slider 22h are carried out from the power supply means 15 via an insulating current introduction terminal (not shown). The current introduction terminal is attached to the cavity 1, and is maintained in a reduced pressure atmosphere in the cavity 1, and is electrically connected to the first slider from the power supply means, and the second slider is electrically connected. The first discharge electrode 11 of the disk-shaped member made of metal and the peripheral portion of the second discharge electrode 12 have an edge shape. As will be described later, when electric power is applied to the first discharge electrode 11 and the second discharge electrode 12 by the power supply means 15, discharge occurs between the edge shape portions of the both electrodes. When the discharge occurs, the two electrodes are at a high temperature. Therefore, the first discharge electrode 1 1 and the second discharge electrode 12 are made of a high melting point metal such as tungsten '钡, 巨, or the like. Further, the insulating material 20c is made of, for example, tantalum nitride, aluminum nitride, diamond or the like. When the discharge occurs in the case of EUV radiation, the first and second discharge electrodes 11 and 12 are rotated. Thereby, the position at which the discharge occurs in the two electrodes is -125-200908815, varying every pulse. Therefore, the thermal load applied to the first and second discharge electrodes 11 and 12 is reduced, and the wear of the electrode can be reduced. The life of the discharge electrode is prolonged. (b) Power supply means A diagram of the configuration of the equal-circuit circuit of the power supply means 15 is shown in Fig. 35. The equal-circuit circuit of the power supply means 15 shown in Fig. 5 is a PFN circuit composed of a charger CH1, a solid-state switch SW, and an LC distributed constant circuit in which n groups of capacitors C and L are connected in a row. The switch SW 1 is formed. An example of the operation of the power supply means is as follows. First, the set charging voltage of the charger CH1 is adjusted to the predetermined 値Vin. Then, when the solid-state switch SW is turned on, the n capacitors C constituting the PFN circuit portion are charged, so that the switch SW1 is turned on, and a voltage is applied between the first main discharge electrode and the second main discharge electrode. Then, if a discharge occurs between the electrodes, a current flows between the electrodes. Here, the lines formed by the capacitors C and the load are different in inductance, and therefore the current periods flowing in the respective lines are different from each other. The current flowing between the electrodes is a circuit that overlaps the flow in each line. As a result, a current pulse having a long pulse width flows between the electrodes. (c) Low-temperature plasma gas supply means In Fig. 34, the means for supplying the low-temperature electric propeller gas is: the high-temperature electric paddle material 2 1 'illuminates the laser beam 23 to the -126 of the high-temperature plasma raw material 2 1 - 200908815 The laser source 23a is composed of a high-speed jet nozzle 60b that rectifies the low-temperature plasma gas discharged from the high-temperature plasma raw material 21 irradiated by the laser beam into a rectifying means of a stable flow excellent in directivity. The high-temperature electric paddle material 21 is a space disposed on a plane perpendicular to the optical axis of the EUV condensing lens 2 described below, and is close to the discharge region between the first discharge electrode 1 1 and the second discharge electrode 1 2 . The high-speed jet nozzle 60b is a field in which a low-temperature plasma gas that is set to be selectively discharged from a nozzle is selectively supplied to a fine discharge passage in a discharge region. As described above, by arranging the high-temperature plasma raw material 21 and the high-speed jet nozzle 60b, the low-temperature plasma gas supplied to the discharge passage does not spread in the direction of the EUV condenser 2. Therefore, the debris generated by the laser beam 23 for the high-temperature plasma 21 and the discharge generated between the electrodes hardly proceeds to the EUV condensing mirror 2. The high-speed jet nozzle 60b is a cylindrical member having a narrowed portion inside as shown in Fig. 24(a). When the high-temperature plasma material 2 1 is irradiated by the laser beam 23 in the high-speed jet nozzle, the high-temperature plasma material 2 1 is vaporized to generate a low-temperature plasma gas. Here, since the narrow portion is provided inside the high-speed jet nozzle 60b, the space between the narrow portion and the portion where the laser beam irradiates the high-temperature plasma raw material is caused by the low-temperature plasma gas. Risingly. Further, the low-temperature plasma gas is accelerated from the opening portion of the narrow portion, and is ejected as a high-speed gas excellent in directivity. Here, the injection direction of the high-speed gas stream depends on the direction of the nozzle for high-speed injection. That is, the direction in which the gasification material is conducted does not depend on the incident direction of the laser beam to the high temperature plasma material. -127- 200908815 The laser beam 2 3 ' emitted from the laser source 2 3 a is via the half 23e, and the concentrating means 23c' is provided in the incident window portion 23d' of the cavity 1 by the high-temperature plasma material 2 1 . Further, the second laser beam emitted from the second laser source 24a is set to be transmitted through the above-mentioned semitransparent mirror 2 3 e. The second laser beam 2 4 is transmitted through the semitransparent mirror 2 3 . e 'the concentrating hand|j is disposed in the incident window portion 2 3 d ' of the cavity 1 and is condensed in the discharge space for the semi-transparent mirror 23e disposed at an inclination of about 45 degrees, and the reverse length is set to a semi-transparent mirror The first laser beam 23 of the reflected wavelength. The incident direction of the second ray 24 that sets the wavelength of the transmission wavelength of the semitransparent mirror 23e to the semitransparent mirror 23e is approximately the same as the direction of reflection of the first ray 23, so that the portion 2 provided in the cavity 1 can be formed. 3 d is made into one. As the first laser source 23a that discharges the first laser beam 23 and the second laser source 24a that emits the second laser beam 24, for example, a Q ND + -YAG laser device is used. The wavelength of the first laser beam 23 and the wavelength of the first beam 24 are changed, for example, by a wavelength element. As described above, when the first laser beam 2 3 is irradiated to a part of the low-temperature plasma gas generated by the high-temperature electricity 21 to reach the discharge region of the discharge region, the energy beam is filled with a certain concentration of energy beam, and The second laser beam 24 condenses a predetermined starting discharge in the discharge field. The transparent mirror is incident on the domain of 24, and 2 3c, the fixed position emits the wave again, and the incident beam is incident on the entrance beam of the laser beam, and the position of the state is -128- 200908815 Therefore, before discharge, the first laser beam 23 must be irradiated to the high-temperature plasma material 2 1 and applied to the first discharge electrode 1 1 and the second discharge electrode 12 from the power supply means 15 at a high voltage. In the inter-state, when the first laser beam 23 is irradiated onto the high-temperature plasma material 21, the first laser beam 23 is discharged by the trigger. Therefore, the application of the high voltage between the first discharge electrode and the second discharge electrode must be performed after the first laser beam is discharged from the first laser source. (d) EUV radiation emitted from the EUV radiation concentrating portion by the discharge space 1 a is condensed by the oblique incidence type EUV condensing mirror 2 provided in the EUV radiation concentrating space 1b, and EUV is provided in the cavity 1 The light extraction unit 7 is guided to an illumination optical system of an exposure apparatus (not shown). The EUV condensing mirror 2 is, for example, a plurality of mirrors having a spheroid having a different diameter or a shape of a rotating paraboloid. These mirrors are on the same axis, and the center axis of the overlap is arranged so that the focus position is approximately the same. For example, on the side of the reflecting surface of the base material having a smooth surface formed of nickel (Ni) or the like, the ruthenium (Ru) is densely coated. A metal film such as molybdenum (Mo) or rhodium (Rh) constitutes EUV light which can reflect an oblique incident angle of 0° to 25°. Further, in Fig. 34, the discharge space la is shown to be larger than the EUV light concentrating space 1b, but for the sake of easy understanding, the actual size relationship is not as shown in Fig. 34. In fact, the EUV light concentrating space lb is larger than the discharge space 1 a. -129- 200908815 (e) The chip collector is disposed between the discharge space la and the EUV light concentrating space lb described above, in order to prevent damage of the EUV condensing mirror 2, and to capture the second and second discharge electrodes in contact with the high temperature plasma. The peripheral portion of 11, 12 is a chip collector used only for EUV light by scraping of metal powder or the like generated by sputtering of high-temperature plasma or by scraping of Sn or Li of the seed. In the EUV light source device shown in Fig. 34, a wheel type collector 3 is employed as the chip collector. The wheel type collector 3 is described as a "metal piece collector" in Patent Document 8, for example. The wheel type collector is a method in which the EUV radiated from the high temperature electric paddle is not blocked, and is composed of a plurality of plates disposed in the radial direction of the high temperature plasma generation region and an annular support body supporting the plate. The wheel type collector 3 is disposed between the discharge space 1a and the EUV condensing mirror 2. In the wheel type collector 3, the pressure is increased more than the surrounding atmosphere, so that the movement of the chips through the wheel type collector is reduced by the influence of the pressure. Therefore, the energy of the swarf colliding with the EUV concentrating mirror is reduced, and the damage of the EUV condensing mirror can be eliminated. Hereinafter, the operation of the above-described EUV light source device will be described using Figs. 36 and 37. As an example, a multi-self-bundling method is taken as an example. The control 26 of the EUV light source device is the memory time data Atd, Atg, Δt s, γ, δ ο

Atd is the time until the switching means is turned on after the trigger signal is input to the switching means SW1 of the power supply means 15 (time Td), and the voltage between the electrodes reaches the critical value 値Vp. Atg is the time from 1 -130 to 200908815 when the laser beam is irradiated onto the material of the temperate battery until at least a portion of the low temperature plasma gas reaches the discharge field. Ats is based on the timing at which at least a portion of the low temperature plasma gas reaches the discharge field, and the density of the low temperature plasma gas in the discharge field is the time within the range in which the gas discharge of the laser trigger can be activated. On the one hand, 'γ, δ is the correction time, which will be explained in detail later. In general, when the voltage V applied to the discharge electrodes 11 and 12 is large, the voltage waveform between the discharge electrodes 1 1 and 1 2 increases rapidly. Therefore, the above Atd is dependent on the voltage V applied to the discharge electrodes Η, 12. The control unit 26 of the EUV light source device stores the relationship between the voltage V and the time Atd obtained in advance by experiments or the like as a table. Further, the control unit 26 is a delay time dl until the timing at which the switching means is turned on after the timing at which the main trigger signal is output to the switch S W 1 of the switching means of the pulse power supply means 15 is stored. First, the candidate command from the control unit 26 of the EUV light source device is sent to the exhaust device 5, the motor 22a (step S501 in Fig. 36, and S6 0 1 in Fig. 3). The exhaust device 5 that receives the command is started. That is, the exhaust device 5 operates to make the inside of the chamber 1 a reduced pressure atmosphere. Further, the motor 22a operates to rotate the first rotating (discharging) electrode 11 and the second rotating (discharging) electrode 12. Hereinafter, the above-described operation states are collectively referred to as a standby state (step S502 of Fig. 36 and S602 of Fig. 37). The control unit 26 of the EUV light source device transmits the candidate completion signal to the control unit 27 of the exposure device (step S503 of Fig. 36, and Fig. 200908815 S603 of Fig. 37). Control of the exposure device by the reception completion signal The control unit 26 of the EUV light source device is a received light-emitting command. Further, when the exposure device side controls the intensity of the EUV radiation, the intensity command data of the EUV radiation is also included in the light emission command (step S504 in Fig. 36 and S604 in Fig. 37). The control unit 26 of the EUV light source device is to be charged. The control signal is sent to the charger CH 1 of the power supply means 15. The charge control signal is formed by, for example, a timing signal at the start of discharge. As described above, when the light emission command from the control unit 27 of the exposure device includes the intensity data of the EUV radiation, the charging voltage data signal of each capacitor C of the PFN circuit portion of the power supply device 15 is also included in the above charging control. Signal. For example, a relationship between the EUV radiation intensity and the charging voltage for each of the capacitors C is obtained in advance by an experiment or the like to create a table for storing both. The control unit 26 of the EUV light source device stores the table, and based on the intensity data of the EUV radiation included in the light emission command from the control unit 27 of the exposure device, the charging voltage data of each capacitor C of the PFN circuit unit is called by the table. Further, based on the called charging voltage data, the control 26 of the EUV light source device transmits the charging control signal including the charging voltage data signal for each capacitor C to the charger CH1 of the power supply means (step S505 of FIG. 36). , S605 of Fig. 37). The charger CH1 is charged as described above for each capacitor C. (Step S506 of Fig. 36). The control unit 26 of the EUV light source device calculates the timing of outputting the main trigger signal to the switch SW 1 of the power supply means 15 by using the timing of the first trigger signal output -132 - 200908815 to the first laser source 23a as a reference. . The above timing is determined based on the time data d 1 memorized in advance. Further, the control unit 26 of the EUV light source device calculates the timing at which the second trigger signal is output to the second laser source 24a based on the timing at which the first trigger signal is output to the first laser source 23a. The above timing is determined based on the time data d 1 , Atg, Ats, and Atd stored in advance (step S 5 07 of Fig. 36, S 6 0 6 of Fig. 37). Further, actually, the first trigger signal is output to the first laser source 23a, and the power supply means 15 is set based on the timing T L1 at which the first laser beam is emitted from the first laser source 2 3 a as a reference. The switch SW1 of the exchange means becomes the timing Td of conduction, and the timing TL2 of the second laser beam emitted from the second laser source is preferable. In the present embodiment, the timing Td' of the switching means for outputting the main trigger signal to the power supply means 15 is obtained in advance, until the switching means of the main trigger signal is input to the pulse power supply means 15 to make the switching means The delay time dl until the timing Td is turned on. Further, the timing Td' at which the main trigger signal is output to the switching means of the power supply means 15 is corrected by the delay time dl, and the timing Td at which the switching means is turned on is obtained. On the one hand, the timing TL 1 ' sent by the first trigger signal until the delay time d2 after the first laser beam is irradiated is when the first laser source 23a is a Q-switched Nd + -YAG laser. Ignore the reason that the ns level is small, so it is not considered here. Further, the timing TL11 of the second trigger signal is delayed until the delay time d3 after the first laser beam 23 is irradiated, and is the first -133-200908815 laser source 23a is a Q-switched Nd + -YAG laser. It can be ignored as the ns level is small, so it is not considered here. That is, it is considered that the timing TL1' = TL1, and the timing TL2' = TL2. That is, the timing Td' of outputting the main trigger signal to the switch SW1 of the power supply means 15 by setting the timing TL1' of the first trigger signal to the first laser source 23a as the reference ', the second trigger signal is set. The switch TL2' output to the second laser source 24a substantially realizes the switch SW1 of the switching means of the power supply means 15 based on the timing TL1 of the first laser beam 23a discharged from the first laser source 23a. At the timing Td of conduction, the timing of the timing TL2 emitted by the second laser beam from the second laser source 24a is set. When the timing T L 送 of the first trigger signal is transmitted as a reference, the timing T d ' at which the main trigger signal is output to the switch S W 1 of the power supply means 15 is obtained as follows. In the present embodiment, the first laser beam 23 is irradiated to a portion of the low-temperature plasma gas generated by the high-temperature electric paddle material 21 to reach the discharge region, and the discharge region becomes a low-temperature plasma having a low concentration to some extent. At the timing of the state in which the gas is full, the second laser beam 24 is condensed at a predetermined position in the discharge area to start the discharge. Therefore, the first laser beam 23 must be irradiated to the high-temperature plasma material 21 before discharge. Here, when the high-voltage is applied between the first discharge electrode 11 and the second discharge electrode 12 of the load from the power supply means, and the first laser beam 2 3 is irradiated to the high-temperature plasma material 2 1 , the first The laser beam 23 passes through the vicinity of the discharge field, so that the discharge using the trigger of the first laser beam 23 occurs. That is, when a part of the first laser beam 23 -134 - 200908815 is irradiated onto the discharge electrodes 11 and 12, the hot electrons are emitted from the irradiated discharge electrode to start the discharge. Therefore, the application of the local voltage to the first discharge electrode and the second discharge electrode 12 must be performed after the first laser beam 2 3 is discharged from the first laser source 23 3 a. In other words, the timing Td at which the switch s W1 of the switching means of the electric power supply means 15 is turned on is Tdg TL1 when the timing TL1 at which the first laser beam 23 is discharged from the first laser source 23a is used as a reference. .. (30). Therefore, the main trigger signal sending timing Td' of the switch SW1 for the power supply means when the timing TL11 of transmitting the first trigger signal is used as a reference is

Td' + dl ^ TL l' + d2 ··· (3 1) . Here, the delay time d2 is negligibly small, and thus the main trigger signal sending timing Td' is

Td' + dl ^ TL Γ (32) In this embodiment, the first trigger signal is sent and the first laser beam 23 is actually discharged after the voltage is applied, and the main trigger signal is sent. The timing Td at which the switch SW1 is turned on is set to be slightly delayed from the timing TL1 at which the first laser beam 23 is discharged. Defining the delay time at this time as the correction time γ ' and deforming the equation (3 2 )' becomes

Td' + dl = TL 1 * + γ ... (33) . That is, when the timing T L1 ' of transmitting the first trigger signal is used as a reference, the timing Td_ of the switch s w 1 - 135 - 200908815 for outputting the main trigger signal signal to the power supply means becomes

Td'^TLl' + Y-dl ... (34) ο When the main trigger signal is sent and the switch s W 1 is turned on, the voltage between the electrodes rises. Here, the discharge must occur after the timing of the voltage between the electrodes reaches a certain threshold 値Vp, T1 (=Td + Md). As described above, the critical enthalpy Vp is a voltage 値 when the discharge current 値 flowing when the discharge occurs is equal to or greater than the critical value Ip or Ip2. That is, the peak of the discharge current does not reach the critical threshold 値Ip or Ip2 when the discharge is insufficient at the critical threshold 値Vp. In the present embodiment, the second laser beam is condensed at a predetermined position in the discharge area to start the discharge. Therefore, the timing TL2 of the second laser beam emission must be set after the timing T1 at which the voltage between the electrodes reaches the critical threshold pVp. That is, TL2 ^ Td + Atd (35) Therefore, the relationship between the timing TL2' at which the second trigger signal is sent and the timing Td' at which the main trigger signal is sent is TL2' ^ Td' + d 1 + Atd . - (36) On the one hand, in the present embodiment, the first laser beam 2 3 is irradiated to a portion of the low-temperature plasma gas generated by the high-temperature plasma raw material 21 to reach the discharge field, and the discharge field becomes a certain At a timing when the low-temperature plasma gas is sufficiently filled, the second laser beam 24 is condensed at a predetermined position in the discharge region to start the discharge. As described above, the steady flow of the low-temperature plasma gas is generated from the high-temperature plasma raw material 2 1 by the irradiation of the first laser -136 - 200908815 beam 23. When the front of the steady flow of the low-temperature plasma gas reaches the timing of the discharge field (at least a part of the low-temperature plasma gas reaches the timing of the discharge field), the density of the low-temperature plasma gas occupying the discharge field is small, and 2 The laser trigger of the laser beam irradiated by the laser beam 24 generates a gas discharge plasma. However, by continuing to flow through the steady flow, the density of the low-temperature plasma gas occupying the discharge field increases with time, and reaches a certain enthalpy (for example, ion density l〇17cm~102<) cm3), which At this time, even if the second laser beam 24 is used as a trigger, gas discharge does not easily occur, discharge does not occur, or spark discharge due to voltage rise occurs. That is, the discharge start of the second laser beam 24 cannot be controlled, and the position of the discharge channel cannot be determined. Therefore, the irradiation of the second laser beam 24 is performed in a time zone in which the density of the low-temperature plasma gas in the field of the discharge is small. Taking the timing at which at least a portion of the low-temperature plasma gas reaches the discharge region as a reference, the density of the low-temperature plasma gas in the discharge region is taken as Ats in the range of the gas discharge that can be activated by the laser trigger, and When the time at which the laser beam is irradiated to the high-temperature plasma raw material until the time when at least a part of the low-temperature plasma gas reaches the discharge region is Atg, the timing TL2 of the second laser beam 24 must satisfy the following. Style. TLl+Atg^ TL2^ TLl+Atg + Ats ".(37) -137- 200908815 Therefore, the relationship between the timing TL2 at which the second trigger signal is sent and the timing TLr at which the first trigger signal is sent is TLl' + Atg ^ TL2'^ TLlf + Atg + Ats (38) That is, the timing TL21 at which the second trigger signal is sent must be set to satisfy the following equation. TL2' ^ Td' + dl+Atd -. (36) TLl' + Atg^ TL2'^ TLl' + Atg + Ats (38) Here, for easy understanding, make TL2'-Td' + dl + Atd ... (39) The formula (39) is obtained by substituting the formula (34) as follows. TL2' = TL 1' + 7 + Atd .-. (40) Further, the timing TL21 at which the second trigger signal is sent is set to coincide with the timing at which at least a part of the low-temperature plasma gas reaches the discharge region TL' + Atg After the correction time ε (〇 < e < Ats ). That is, TL2' = TL Γ + γ + Atd ... (40) TL2' = TLl' + Atg + s(0<s<Ats) ---(41) The relationship between the correction time ε and the correction time γ is ε γ + Δΐά-Atg (42) That is, in the present embodiment, the transmission timing TL2' of the second trigger signal is set as follows. TL 2' = TL 11 + Δ tg + ε (0 < ε < Δ ts , ε = γ + Δ td - A tg) --- (43) by setting the timing TL2' of the second trigger signal As shown in equation (43), the second laser beam is the voltage between the electrodes reaching Vp, and the density of the energy beam in the field of discharge -138-200908815 is the state in which the gas can be activated by the laser trigger. Within the time range. The control unit 26 of the EUV light source device is the timing TL11 after the timing at which the charger charging stabilization time tst has elapsed until the charging of each capacitor C is set, and the first touch signal is transmitted at the timing of the timing TL1'. The first laser source 23a (step S508 of Fig. 36, S605, S607 of the figure). The control unit 26 of the EUV light source device is the timing Td' of the main trigger signal when the timing of the transmission timing TL1' is set in step S607, and the main trigger signal is sent to the switch SW1 of the power supply means 15. Further, the timing TL21 of the second trigger signal when the timing TL11 is used as the reference transmits the second trigger signal to the second laser source 24a. (Step S509 of Fig. 36, S610, S613 of Fig. 37). In step S608, the first laser beam 24 is irradiated onto the high-temperature plasma material 21 at about the same time as the first trigger signal is sent (Fig. 36, S607, S608). When the first laser beam is irradiated at a high temperature. The plasma raw material generates a steady flow of the low temperature electric propeller gas from the high temperature slurry raw material, and after the time Atg, at least a portion of the warm plasma gas reaches the discharge field (Fig. 37 S609), as described above, in step S6 In the case of 0 9 , the main trigger signal is sent to the opening SW1 of the power supply means 15 in accordance with the time Td' of the equation (3 4 ). As a result, after the time d1, the switch SW1 is turned on, and the voltage between the first rotating electrode 11 and the second rotating electrode 12 rises. The electric power is sent to the critical 値vP after the current low voltage of 37 and the current low voltage of -139-200908815. As described above, the critical 値V p is the voltage 时 when the discharge current 値 flowing when the discharge occurs is equal to or greater than the critical value 値Ip (S610, S611, S612 in Fig. 37). On the other hand, as described above, in step S609, the timing TL2' according to the equation (43) and the second trigger signal are sent to the second laser source 24a. As a result, the second laser beam 24 reaches the voltage between the electrodes, and the density of the low-temperature plasma gas in the discharge region is concentrated in the discharge within a time range in which the state of the gas discharge by the laser trigger can be started. The location of the field. As a result, a gas discharge occurs in the field of discharge. As described above, in the vicinity of the focus of the second discharge electrode 24, the conductivity is increased by electron emission. Therefore, the position of the discharge channel of the gas discharge is defined at the position where the laser focus is set. That is, the gas discharge position is determined by the second laser beam (S613, S614 of Fig. 37). After the discharge is started, at the timing of passing the Ati, the magnitude of the discharge current reaches the above-mentioned critical 値Ip (S 6 15 of Fig. 7). In the timing Tl+rheat(>Tl+Ati), the electron temperature of the low-temperature plasma gas reaches 20 to 30 eV to become a high-temperature plasma, and EUV emission of the high-temperature plasma is started (step S510 of the 36th diagram, Figure 37 (S616). The low-temperature plasma gas is supplied from the beginning of the discharge to the discharge of the fine discharge channel formed with the gas discharge, and the fine discharge channel of the gas discharge is also continuously supplied with the low-temperature plasma gas, thereby repeating the self-beaming The effect is either based on the closing effect of the self magnetic field. Therefore, the diameter of the fine discharge passage is a pulsating behavior indicating a thinning or widening, but is relatively maintained -140-200908815 in a small state. That is, the self-beaming of the low temperature plasma is repeatedly performed, and the EUV radiation is continued. Here, in the DDP method using the conventional self-beam effect, the LAGDPP method maintains the EUV emission time, for example, 200 ns or less, and thus the time at which the current 値 is equal to or higher than the discharge channel of Ip is low temperature plasma gas to fine The supply of the discharge channel is set by the pulse power supply means 15 and the pair of electrodes (the first electrode 11 and the second electrode 12) from the start of the discharge timing T1 (200 ns + τ heat) or more. The circuit is compared with the DPP method using the conventional self-beam effect, and the LAGDPP method is a long pulse that can realize EUV radiation. The EUV radiation emitted from the high-temperature plasma is collected by the oblique type EUV condensing mirror 2 disposed in the condensing space by the wheel type collector 3, and is provided by the EUV light extracting portion 7 provided in the chamber 1. It is guided to an illumination optical system of an exposure apparatus (not shown). In the EUV generation method of the present embodiment, as in the EUV generation method of the first embodiment, the long pulse of the EUV radiation can be realized by the multi-self-beam method and the non-self-beam method. Further, the heat load applied to the electrode can be made smaller than that of the conventional one, and the occurrence of debris can be suppressed. Further, it is not necessary to have a large current flowing in the discharge space as in the conventional long pulse technique, and to change the waveform of the discharge current in order to maintain the self-beam effect. That is, high precision current control is not required. In particular, in the present embodiment, a part of the low-temperature plasma gas generated by irradiating the first laser beam to the high-temperature electric paddle material reaches the discharge field, and a low-concentration low-temperature plasma gas is discharged to some extent in the discharge field. At the timing of the full state of the 200,908,815 state, the second laser beam is concentrated at a predetermined position in the discharge field, not a vacuum arc discharge but a starting gas discharge. Here, the conductivity is increased by electron emission near the focus of the second laser beam. Therefore, the position of the discharge channel of the gas discharge is drawn at the position where the laser focus is set. That is, the gas discharge position is defined by the second laser beam. As described above, in the EUV radiation system of the present embodiment, the position of the gas discharge channel body is defined, so that the positional stability of the gas discharge channel can be improved with high precision. Further, the pulse width ' of the second laser beam at the position of the discharge channel defining the gas discharge is preferably a short pulse having a certain degree. When the pulse width of the second laser beam is a short pulse, the peak power of the second laser beam becomes large. That is, the ion drift in the field where the second laser beam is concentrated becomes small, and the degree of ionization becomes large. Therefore, the diameter of the discharge channel is finely changed, and the boundary of the discharge channel becomes clear. That is, the diameter of the high-temperature plasma which becomes the EUV radiation source becomes small, and a suitable EUV light source device can be provided as a light source for exposure. The above pulse width is preferably, for example, 1 n s or less. BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1(a) to 1(f) are timing charts (1) showing the generation of euv of the present invention. 2(a) to 2(f) are timing charts (2) showing the generation of euv of the present invention. Figs. 3(a) and 3(b) are schematic diagrams (1) showing the relationship between the -142 - 200908815 electrode, the material supply position, and the irradiation position of the laser beam for the raw material of the present invention. 4(a) and 4(b) are schematic views (2) for explaining the relationship between the electrode, the material supply position, and the irradiation position of the laser beam for the raw material of the present invention. Figs. 5(a) and 5(b) are schematic diagrams (3) for explaining the correlation between the electrode, the material supply position, and the irradiation position of the laser beam for the material of the present invention. Fig. 6 is a view showing a path until the condition that the high-temperature plasma raw material reaches the EUV radiation condition in the present invention. Fig. 7(a) to Fig. 7(c) are diagrams showing a long pulse (multi-self-beam method) method for explaining the present invention. Figs. 8(a) to 8(c) are views showing a long pulse (non-self-bundling) method of the present invention. Fig. 9 is a view showing a sectional configuration (front view) of an EUV light source device according to an embodiment of the present invention. Fig. 10 is a view showing a sectional configuration (top view) of an EUV light source device according to an embodiment of the present invention. Fig. 11(a) and Fig. 11(b) are diagrams showing an example of collecting light of the second laser beam (starting laser beam). Fig. 12 is a view showing a monitoring ring for explaining the position of the raw material dropped by the raw material supply unit. Fig. 13 is a flowchart (1) - 143 - 200908815 showing the operation of the embodiment shown in Figs. 9 and 10, and Fig. 14 is a view showing the operation of the embodiment shown in Fig. 9 and Fig. 10 Flow chart (2). Fig. 15 is a timing chart showing the operation of the embodiment shown in Figs. 9 and 10. Fig. 16 is a view showing a first modification (front view) of the EUV light source device according to the embodiment of the ninth and tenth drawings. Fig. 17 is a view showing a first modification (top view) of the EUV light source device of the embodiment shown in Fig. 9 and Fig. 10; Fig. 18 is a view showing a second modification (front view) of the EUV light source device of the embodiment shown in Figs. 9 and 10. Fig. 19 is a view showing a second modification (top view) of the EUV light source device of the embodiment shown in Fig. 9 and Fig. 10. Fig. 20 is a view showing a second modification (side view) of the EUV light source device of the embodiment shown in Figs. 9 and 10. Fig. 21 is a view showing a third modification (front view) of the EUV light source device of the embodiment shown in Figs. 9 and 10. Fig. 22 is a view showing a third modification (side view) of the EUV light source device of the embodiment shown in Figs. 9 and 10. Fig. 23 (a) and Fig. 23 (b) are diagrams showing the case where the tubular nozzle for discharging the raw material is attached to the irradiation position of the first energy beam. Figs. 24(a) to 24(c) The figure shows a state in which a high-speed jet nozzle for discharging a raw material is attached to an irradiation position of a first energy beam, and a narrow portion is provided in a part of the inside of the nozzle. -144- 200908815 Fig. 25 is a view showing a state in which a raw material accommodating portion and a high-speed jet nozzle for accommodating a high-temperature plasma raw material are integrally formed. Tables 26(a) and 26(b) are diagrams showing a state in which a concave portion is formed at a position where a beam of a high-temperature electrical material is irradiated. Fig. 27 is a flowchart (1) showing the operation of the first modification of the EUV light source device of the embodiment shown in Fig. 9 and Fig. 1 . Fig. 28 is a flowchart (2) showing the operation of the first modification of the EUV light source device of the embodiment of Fig. 9 and Fig. 1 . Fig. 29 is a timing chart showing the operation of the first modification of the EUV light source device of the embodiment shown in Figs. 9 and 10. Figure 30 is a table jp: a diagram illustrating the adjustment of illumination. Fig. 31 is a view showing a basic configuration example of an EUV light source device which is long-pulsed according to the present invention. 32(a) to 32(e) are timing charts for explaining the operation of the EUV light source device shown in Fig. 31. Fig. 33 is a view showing the operation of the EUV light source device of the embodiment of the present invention which is long pulsed. Fig. 34 is a view showing an example of the configuration of an embodiment of an EUV light source device which is pulsed. Fig. 35 is a diagram showing an example of the configuration of an equal circuit that indicates the power supply means. Fig. 3 is a flow chart showing the operation of the embodiment shown in Fig. 34. Fig. 3 is a timing chart showing the operation of the embodiment shown in Fig. 34 - 145 - 200908815. Fig. 3 is a view showing a path until the high-temperature plasma raw material reaches a condition that satisfies the EUV radiation condition. Figs. 39(a) to 39(c) are diagrams showing the relationship between the plasma current I of the conventional DPP type EUV light source device, the radius γ of the plasma column, and the EUV radiation output. 40(a) to 40(c) are diagrams showing the relationship between the plasma current I, the radius γ of the plasma column, and the EUV radiation output when the conventional DPP type EUV light source device is pulsed long. figure. Fig. 4 is a view showing a configuration example of a conventional DPP type EUV light source device for realizing a long pulse method for EUV radiation. [Main component symbol description] 1 : Cavity 1 a : Discharge space 1 b : Concentration space 1 c : Compartment wall 2 : EUV condenser 3 : Wheel collector 4 , 5 : Vacuum exhaust device 6 : Magnet 7 : EUV Extraction unit 8: pulse power generator 1 1 and 12: discharge electrode-146-200908815 lla, 12a: molten metal for feeding 1 lb, 12b: container 1 lc, 12c: electric power introduction portion 13, 14: gas supply unit 1 3 a : Nozzle 1 3 b : Aerosol 1 5 : Pulse power supply means 20 : Raw material supply unit 20a : Raw material monitor 2 1 : Raw materials 22a, 22b : Electric motor 2 2 c, 2 2 d : Mechanical seals 22e, 22f: Rotating shaft 23: laser beam for raw material (first laser beam) 23a: first laser source 2 3 b : first laser control unit 24: laser beam for starting (second laser beam) 24a: second laser source 24b: second laser control unit 25: material recovery means 2 6 : control unit 2 7 : exposure machine (control unit) 3 0 : raw material supply unit 3 1 : linear material - 147- 200908815 40 : 40a : 40b : 40c : 50 : 50a : 50b : 50c , 50d : 50e : 6 0a: 60b : 62 : 63 : Raw material supply unit liquid raw material supply means raw material supply Raw material supply disk motor unit bus capillary liquid feed 64: Liquid feed heater control unit bus speed jet nozzle the narrow heater portion power supply pressure rises tubular nozzle portion -148-

Claims (1)

200908815 X. Patent application scope 1. An extreme ultraviolet light source device, comprising: a container, and a raw material supply means for supplying liquid or solid raw materials for extreme ultraviolet radiation to the container; and irradiating the first energy beam The first energy beam irradiation means for vaporizing the raw material by the raw material, and the first raw material for separating the gasified material by heating and exciting the high temperature plasma in the container a counter electrode, and a pulse power supply means for supplying pulsed electric power to the electrode; and concentrating the extreme ultraviolet light radiated from the high temperature plasma generated in the discharge region of the discharge of the pair of electrodes An optical device, and an extreme ultraviolet light source device for extracting the extreme ultraviolet light extracting portion of the condensed extreme ultraviolet light, wherein the extreme ultraviolet light source device further comprises: applying the second energy beam to the application Between the electrodes having electric power, the discharge is started in the above-mentioned discharge area, and the discharge path is defined at a predetermined position in the discharge field. In the second energy beam irradiation means, the first energy beam irradiation means is a space other than the discharge area, and the raw material to be vaporized is supplied to a material that can reach the space in the discharge area, and the first irradiation is performed. Energy beam. 2. An extreme ultraviolet light source device comprising: a container, and a raw material supply means for supplying a liquid or solid raw material for extreme ultraviolet radiation to the container; and irradiating the first energy beam to the raw material a first energy beam irradiation means for vaporizing -149-200908815, and a pair of electrodes for separating the gasified material by a discharge in the container to heat-excitation and generating a high-temperature plasma for a predetermined distance And a pulse power supply means for supplying pulse power of 1 // s or more to the electrodes; and collecting the extreme ultraviolet light emitted from the high-temperature plasma generated in the discharge area of the discharge of the pair of electrodes The concentrating optical means of light, and the extreme ultraviolet light source device for extracting the extreme ultraviolet light extracting portion of the condensed extreme ultraviolet light, wherein the extreme ultraviolet light source device further comprises: spraying the second energy The beam is irradiated between the electrodes to which electric power is applied, and the discharge is started in the discharge region, and the discharge path is defined at a predetermined position in the discharge region. In the second energy beam irradiation means, the first energy beam means is a space outside the discharge path, and the first energy beam is irradiated to a material disposed in a space in which the vaporized material can reach the discharge path. After the discharge path is defined between the electrodes, a material gas having an ion density approximately equal to the ion density of the extreme ultraviolet radiation condition is supplied to the discharge path. 3. The extreme ultraviolet light source device according to the first or second aspect of the invention, wherein the first energy beam irradiation means and the second energy beam irradiation means are spatial density distributions having a predetermined distribution At least a part of the vaporized raw material enters the discharge region, and the discharge current of the discharge generated in the discharge region is set to a predetermined threshold or more, and each of the operation timings is set. The extreme ultraviolet light source device according to the first, second or third aspect of the invention, wherein the raw material supply means is used to form the raw material into droplets. It is carried out by dropping in the direction of gravity. 5. The extreme ultraviolet light source device according to the first, second or third aspect of the invention, wherein the material supply by the raw material supply means is to continuously move the raw material into a linear material. This linear material is carried out. 6. The extreme ultraviolet light source device according to claim 1, wherein the raw material supply means is provided with a raw material supply disk, and the raw material supply means supplies the raw material supply means. The raw material is used as a liquid raw material, the liquid raw material is supplied to the raw material supply disk, and the raw material supply disk to which the liquid raw material is supplied is rotated to move the supply portion of the raw material supply disk to the irradiation of the energy beam The location is carried out. The extreme ultraviolet light source device according to claim 1, wherein the raw material supply means is provided with a capillary tube, and the raw material is supplied by the raw material supply means. The liquid material is prepared, and the liquid material is supplied to the irradiation position of the energy beam via the capillary. 8. The extreme ultraviolet light source device of claim 2, 2 or 3, wherein: 200908815 a tubular nozzle is disposed at an energy beam irradiation position of the raw material, by irradiation of an energy beam At least a portion of the vaporized material is ejected by the tubular nozzle described above. The extreme ultraviolet light source device 'where' as set forth in claim 8 is provided with a narrow portion in a part of the inside of the tubular nozzle. The extreme ultraviolet light source device according to any one of claims 1 to 9, wherein the discharge field is substantially parallel to a discharge direction occurring between the pair of electrodes. A magnetic field application means for applying a magnetic field. The extreme ultraviolet light source device according to any one of the preceding claims, wherein the pair of electrodes are disk-shaped electrodes, and a discharge position at which the surface of the electrode is rotationally driven is changed. . The extreme ultraviolet light source device according to claim 11, wherein the disk-shaped pair of electrodes are disposed such that edge portions of the peripheral portions of the two electrodes face each other with a predetermined distance therebetween. The extreme ultraviolet light source device according to any one of claims 1 to 2, wherein the energy beam is a laser beam 〇 14. An extreme ultraviolet light generating method is The liquid or solid material to be irradiated by the extreme ultraviolet light to be supplied to the inside of the container including the pair of electrodes is irradiated with the first energy beam to be vaporized, and the excitation is performed by discharge of the pair of electrodes. The above-mentioned raw material which is vaporized to generate a high-temperature plasma to generate extreme ultraviolet light, which is characterized by -152-200908815 The first energy beam is a space other than the above-mentioned discharge field, The vaporized raw material is supplied to a raw material that can reach the space in the discharge region, and is irradiated by the second energy beam that is irradiated in the discharge region, and is discharged in the discharge region in which the pair of electrodes are discharged, and A discharge path is defined at a predetermined position in the discharge field. a method for generating an extreme ultraviolet light by irradiating a first energy beam with a liquid or solid raw material for radiating extreme ultraviolet light in a container including a pair of electrodes therein to vaporize it, and An extreme ultraviolet light generating method for generating an ultraviolet light by exciting the vaporized material by the discharge of the pair of electrodes to generate a high-temperature plasma, wherein the first energy beam is in addition to the discharge field In the space other than the gasified material supplied to the material that can reach the space in the discharge region, the second energy beam that is irradiated in the discharge region is discharged to the pair of electrodes. The discharge field is activated to discharge, and a discharge path is defined at a predetermined position in the discharge field. After the discharge path is defined between the electrodes, the ion density is approximately equal to the extreme ultraviolet radiation by the first energy beam. The raw material gas of the conditional ion density is supplied to the above-mentioned discharge path, and the above-mentioned raw material gas is heated to satisfy the extreme ultraviolet light discharge by discharge. Temperature conditions, the more extreme ultraviolet 200ns occur continuously. 1 6 . The extreme purple-153-200908815 external light generating method according to claim 14 or claim 15, wherein the spatial density distribution is at least a part of the gasified raw material of the predetermined distribution reaches the discharge In the timing of the field, the timing of irradiation of the first energy beam and the second energy beam is set so that the discharge current of the discharge generated in the discharge region is equal to or greater than a predetermined threshold. 1 7 . The method of generating an extreme ultraviolet light according to claim 16 wherein the time data of the start timing of the discharge and the timing of the timing at which the discharge current reaches the predetermined threshold are obtained, and the correction is performed based on the two time data. 1 The timing of the irradiation of the energy beam and the second energy beam. The method of generating an extreme ultraviolet light according to any one of the above-mentioned claims, wherein the first energy beam and the second energy beam are set at the irradiation timing as described above. Before the irradiation of the beam, the first energy beam is irradiated once or more in the above raw material. -154-