TW200908815A - Extreme ultraviolet light source device and extreme ultraviolet radiation generating method - Google Patents
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200908815 九、發明說明 【發明所屬之技術領域】 本發明是有關於藉由放電所生成的電漿來發生極端紫 外光的極端紫外光光源裝置及極端紫外光發生方法,尤其 是關於將能量射束照射在供應於放電電極近旁的極端紫外 光發生用高溫電漿原料而使之氣化,藉由從氣化後的高溫 電漿原料利用放電所生成的電漿來發生極端紫外光的極端 紫外光光源裝置及極端紫外光發生方法。 【先前技術】 針對於半導體積體電路的微細化、高積體化,在其製 造用投影曝光裝置中被要求提昇解像力。爲了因應於該要 求’進行著曝光用光源的短波長化,而作爲連續於準分子 雷射裝置的下一代半導體曝光用光源,被開發著放出波長 13〜14nm’尤其是波長13.5 nm的極端紫外光〔以下也稱爲 EUV ( Extreme Ultra Violet)光〕的極端紫外光光源裝置 (以下,也稱爲EUV光源裝置)。 在EUV光源裝置中,發生EUV光的方法眾知有幾種 ’其中之一有藉由EUV放射種籽的加熱激勵而發生高溫 電漿,而取出從該電漿所放射的EUV光的方法。 採用此種方法的EUV光源裝置,是藉由高溫電漿的 生成方式大致被分成LPP( Laser Produced Plasma:雷射 生成電漿)方式 EUV光源裝置與 DDP ( Discharge Produced Plasma:放電生成電漿)方式EUV光源裝置( 200908815 例如參照非專利文獻1 )。 LPP方式EUV光源裝置是利用來自以脈衝雷射照射固 體、液體、氣體等的靶所發生的高溫電漿的EUV放射光 。一方面,DDP方式EUV光源裝置是利用來自藉由電流 驅動所生成的高溫電漿的EUV放射光。 在上述的兩方式的EUV光源裝置中,作爲放出波長 1 3 .5nm的EUV光的放射種籽,亦即作爲EUV發生用高溫 電漿原料,現在眾知有1 〇價左右的氙(X e )離子,惟作 爲用以得到更強的放射強度的高溫電漿原料,有鋰(Li ) 離子與錫(Sn )離子受重視。例如,Sn是對於用以發生 高溫電漿的輸入能量的波長1 3 _ 5 nm的E UV光放射強度比 的轉換率比Xe還大數倍。 近年來,作爲高溫電漿的生成方式,提案著對於高溫 電漿原料,組合雷射射束的照射,及依據放電的大電流所 致的加熱的方式(以下,也稱爲混合方式)。 針對於採用混合方式的EUV光源裝置,例如記載於 專利文獻1。 被記載於專利文獻1的EUV光源裝置的混合方式’ 是以以下的程序所進行。專利文獻1的第4 C圖是採用混 合方式的EUV光源裝置的說明圖。 在同圖中,被接地的外側電極是形成放電容器。在外 側電極的內側設有絕緣體,又在絕緣體的內側設有高電壓 側的內側電極。作爲高溫電漿原料’例如使用著氙(x e ) 氣體,或是氙(Xe)與氦(He)的混合氣體。此種高溫電 -6- 200908815 漿原料氣體是從設於內側電極的氣體路徑被供應至放電容 器內。在放電容器內配置有預備電離高溫電漿原料氣體所 用的RF預離子化線圏,聚焦雷射射束所用的聚焦透鏡。 EUV放射的發生是如下地進行。 首先,被導入至放電容器內的高溫電漿原料的原料氣 體,藉由脈衝電力供應於RF預離子化線圈,被預備電離 。之後,通過聚光透鏡的雷射射束被聚光在放電容器內的 所定領域,高溫電漿原料氣體是被預備電離之故,因而在 雷射焦點附近被分解。 之後,脈衝電力被施加於外側電極、內側電極間,而 發生放電。藉由依放電的自束效應,高溫電漿原料被加熱 激勵而生成高溫電漿,從該高溫電漿發生EUV放射。 在此,在雷射焦點近旁,藉由電子放出而降低電導率 。因此,放電領域(發生電極間放電的空間)的放電通道 的位置,是被劃定在設定雷射焦點的位置。亦即,電漿自 束位置,是藉由雷射射束被劃定。所以,可提昇EUV放 射的發生點的位置穩定性。 EUV光源裝置被使用作爲曝光用光源時,則被要求發 光點的指向穩定性的高精度化。在專利文獻1所述的混合 方式的EUV光源裝置是可說因應於上述要求的例子。 又,近年來,對於EUV發生用高溫電漿原料(以下 ,也稱爲高溫電漿原料),提案著組合依雷射射束的照射 的氣化,及依據放電的大電流所致的加熱來生成高溫電漿 ,而從該高溫電漿來發生EUV放射的方式(例如,參照 200908815 專利文獻3,專利文獻4,專利文獻5等)。以下將該方 式稱爲 LAGDPP ( Laser Assisted Gas Discharge Produced Plasma)方式。 在上述的各方式的EUV光源裝置中,作爲放出波長 1 3 · 5 nm的EU V光的放射種籽,亦即,作爲高溫電漿原料 ,現在眾知有1 〇價左右的氙(Xe )離子,惟作爲用以得 到更強的放射強度的高溫電漿原料,有鋰(Li )離子與錫 (Sn )離子受重視。例如,Sri是對於用以發生高溫電漿 的輸入能量的波長13.5nm的EUV光放射強度比的轉換率 比Xe還大數倍。 以下,使用第3 8圖,簡單地說明依據上述的各方式 而到達EUV放射的過程。 第38圖是表示高溫電漿原料(在第38圖中,作爲例 子記載爲燃料固體),採用什麼樣的狀態變化的路徑達到 滿足EUV放射條件的條件的圖式。 在同圖中,縱軸是表示離子密度(cm·3 ),橫軸是表 示電子溫度(eV )。同圖是表示將縱軸朝下方向進展,則 高溫電漿原料是膨脹而離子密度會減少,朝上方向進展, 則被壓縮而離子密度會增加。又,表示將橫軸朝右方向進 展’則高溫電漿原料被加熱使得電子溫度上昇。 在LPP方式中,例如對於所謂Sn或Li的高溫電漿原 料的固體或液體等的靶(在第3 8圖左上方表示作爲燃料 固體。在固體狀態下,所謂S η或Li的金屬的離子密度是 大約1 022cm·3 ’而電子溫度是ieV以下),照射著強雷射 -8- 200908815 射束。被照射雷射射束的高溫電漿原料,是例如一 口氣地 加熱至電子溫度超過3 00eV爲止而被氣化,俾生成高溫電 漿,所生成的高溫電漿是膨脹,不久之後,高溫電漿內的 離子密度是成爲1〇17〜1〇2%ηΓ3左右,而電子溫度是成爲 20〜3 OeV左右。到達成此種狀態的高溫電漿,會放射EUV (第3 8圖的路徑1 )。 亦即,在LPP方式中,藉由以雷射射束所加熱而生成 的電漿會膨脹,該電漿是充足如上述的EUV放射條件( 亦即,離子密度1〇17〜l〇2C)cnr3,電子溫度爲20〜30eV)。 一方面,在DPP方式中,例如將電極配置於內部的放 電容器內作成氣體狀的高溫電漿原料氣氛,而在該氣氛中 的電極間發生放電來生成初期電漿。 例如高溫電漿原料的Sn,是以所謂SnH4的氣體狀態 下被供應至放電容器內,藉由放電形成初期電漿。初期電 漿的離子密度是例如l〇16cnT3左右,而電子溫度是例如 1 eV以下左右,未充足如上述的EUV放射條件(亦即,離 子密度1〇17〜l〇2()cm_3,電子溫度爲20〜30eV)(第38圖 的自束初期狀態)。 在此,藉由放電流在電極間的直流電流的自我磁場的 作用,上述的初期電漿是被收斂在放電流路徑方向。藉由 此初期電漿的密度是變高,而電漿溫度也急速地上昇。將 此種作用,以下稱爲自束效應。藉由依自束效應的加熱, 成爲高溫的電漿的離子密度是1〇17〜1〇2、πΓ3,電子溫度是 到達20〜20eV左右,而從該高溫電漿放射EUV (第38圖 200908815 的路徑2)。 亦即,在D P P方式中’藉由所生成的電漿被壓縮,則 該電槳是充足如上述的EUV放射條件(亦即,離子密度 1〇17〜102GcnT3而電子溫度是20〜30eV)。 又,在LAGDPP方式中,對於固體或液體等的靶(高 溫電漿原料)照射雷射射束’氣化原料而生成氣體狀的高 溫電漿氣氛(初期電漿)。與DPP方式同樣。初期電槳的 離子密度是例如l〇16cm_3左右’而電子溫度是例如leV以 下左右,未充足如上述的EUV放射條件(亦即,離子密 度1〇17〜102Gcm·3,電子溫度爲20〜30eV)(第38圖的自 束初期狀態)。之後’藉由依放電電流驅動的壓縮與加熱 ,成爲高溫的電漿的離子密度是1〇17〜l〇2()cnr3,電子溫度 是到達20〜20eV左右,而從該高溫電漿放射EUV。 LAGDPP的例子,是被記載於專利文獻3,專利文獻 4,專利文獻5。都是記載著以雷射照射將高溫電槳原料予 以氣化,生成「冷電漿」,使用依放電電流的自束效應來 生成高溫電槳,而從該高溫電漿放射EUV的情形。亦即 ,依照習知例,依LAGDPP方式於放電電流驅動的加熱是 與DPP方式同樣’利用著自束效應。亦即,在第38圖中 ,經由路徑3 —路徑2來形成充足EUV放射條件的高溫電 漿。 LPP方式的情形’將雷射射束照射在高溫電漿原料所 生成的高溫電漿’是在短時間內進展膨脹而被冷卻。因此 ’達到EUV放射條件的高溫電漿,是在短時間(例如 -10- 200908815 10 ns)內被冷卻而成爲無法充足EUV放射條件,停止來 自電漿的EUV放射。 一方面,DPP方式或LAGDPP方式的情形,是如上述 地脈衝狀放電電流流在放電電極間,而高溫電漿原料的初 期電漿,是藉由自束效應被壓縮加熱而達到EUV放射條 件。 但是,朝放電流路徑方向被收歛的高溫電漿,是隨著 放電電流的急速地減少,在短時間內朝放電流路方向急速 地膨脹而消失自束效應,會降低密度之同時,被冷卻。結 果,放電領域的電漿,是成爲無法充足EUV放射條件之 故,因而停止來自電漿的EUV放射。 又,電極間的放電,是從依較廣領域的雷射觸發器的 真空電弧放電開始,隨著高溫電漿原料供應移行至氣體放 電(也包括自束放電)。之後,形成有放電柱(電漿柱) ,惟在本案發明的說明書中所謂「放電領域」,是定義爲 包括其所有的放電現象的空間。 又,在上述放電領域內,放電隨著放電柱(電漿柱) 的成長,使得內部的電流密度增大而移行至氣體放電之際 ,將在放電柱中的放電驅動電流支配性地流動的高電流密 度的空間領域定義作爲「放電通道」。在此,放電通道爲 放電驅動電流支配性地流動的領域之故,因而將放電通道 也稱做放電路徑或放電電流路徑。 以下,針對於EUV放射的長脈衝化加以說明。 如上述地,EUV放射是在短時間內發生成脈衝狀。因 -11 - 200908815 此,能量轉換效率顯著變小。作爲半導體曝光用光源使用 EUV光源裝置時,則在EUV光源裝置,儘量被要求兩立 高效率與高輸出的運轉。若可長時間維持高效率的EUV 發生條件,則可成爲高效率高輸出的EUV光源。結果, 可期待發光脈衝寬的長脈衝化。 在專利文獻6,專利文獻7,揭示在DPP方式的EUV 發生裝置中,將EUV放射予以長脈衝化的方法。以下, 依據專利文獻6,7,針對於習知的長脈衝化方法,使用第 3 9圖及第4 0圖加以說明。 第39圖及第40圖都是表示對於來自放電開始經過時 間,(a)電漿電流I, (b)電漿半徑柱的r, (c) EUV 放射輸出的關係的圖式,在橫軸表示時間,而在縱軸表示 電漿電流I,電漿柱的半徑r,EUV放射輸出者。 專利文獻6,7的EUV放射的長脈衝化,是在DPP方 式的EUV發生裝置中,藉由分離電漿的加熱與壓縮工程 及高溫高壓狀態的維持工程而加以控制就可實現。 如第3 9圖所示地,在習知的D D P方式中,流在形成 於一對電極間的一樣電漿柱的內部的電漿電流I的波形, 是隨著開始放電後經過時間會增加,而過了峰値會減少的 波形。以下,爲了作成容易瞭解,將電流I的波形作成正 弦波形。 隨著電漿電流I的增大會發生電漿的加熱及壓縮。亦 即,所發生的電漿柱的半徑r,是隨著流著電槳電流I,藉 由自束效應徐徐地變小,而電漿電流I値在過了峰値開始 -12- 200908815 下降時成爲最小。 在電漿電流I的波形的峰値近旁’當電漿溫度及離子 密度到達所定範圍內(例如第3 8圖所示地,電子溫度爲 5〜200eV,離子密度爲1〇17〜l〇2°cm_3左右)的期間A之間 ,發生E U V放射。 然而,過了電槳電流I的波形峰値。則電流値隨著經 過時間會減少之故,因而自束效應也減弱,使得電漿膨脹 而降低電槳溫度。膨脹的電漿是具有大的運動能’會從放 電領域快速地脫離。結果,終了 EUV放射。EUV放射的 持續時間是例如僅1 〇ns左右。 一方面,記載於專利文獻6,7的方法,是流在一對 電極間的電漿電流I的波形構成成爲如第4 0圖所示的波 形者。亦即,將電漿電流I的波形,隨著開始放電後經過 時間會增加,而在過了峰値的近旁(例如電漿被自束而開 始EUV放射的時機近旁),再隨著經過時間也增加者。 如第4 0圖所示地,電漿電流I的波形,是構成由加 熱電流波形部(M )與連續於此的閉合電流波形部(N ) 所成。加熱電流波形(Μ),是與表示於第39圖的電漿電 流I的波形的時機上同等。在第40圖中,爲了容易瞭解 ,加熱電流波形部(Μ)是表示作爲正弦波形。 在加熱電流波形部(Μ )的期間內,增大電漿電流I 之同時發生電漿的加熱及壓縮。亦即,所發生的電漿的半 徑r,是隨著流著電漿電流I ’藉由自束效應徐徐地變小, 而在電漿電流I値過了峰値開始下降時成爲最小。在電漿 -13- 200908815 電流I的波形峰値近旁,到達電漿溫度及離子密度到達所 定範圍內(例如第38圖所示地,電子溫度爲5〜200eV, 而離子密度爲1〇17〜l〇2t)cm_3左右)’發生EUV放射。 發生EUV放射之後,電漿電流I的波形,是移行至閉 合電流波形部(N )。 如上述地,藉由自束效應被壓縮的電漿,是以大運動 能擬膨脹。在此’若增大電漿電流1的強度而強有力地進 行自我磁場的作用,可成爲將欲膨脹的電漿維持在壓縮狀 熊。 將如上述的處於自束狀態的電漿壓力作爲ppp ’將電 漿密度作爲npp’將波耳茲常數(Boltzmann Constant)作 爲k,而將電漿溫度作爲Tpp時,則自束狀態的電漿壓力 Ppp是比例於nppkTpp。200908815 IX. INSTRUCTIONS OF THE INVENTION [Technical Field] The present invention relates to an extreme ultraviolet light source device and an extreme ultraviolet light generating method for generating extreme ultraviolet light by plasma generated by discharge, and more particularly to an energy beam The ultraviolet light generated by the extreme ultraviolet light generated near the discharge electrode is vaporized by the high-temperature plasma raw material, and the extreme ultraviolet light of the extreme ultraviolet light is generated by using the plasma generated by the discharge from the vaporized high-temperature plasma raw material. Light source device and extreme ultraviolet light generation method. [Prior Art] In order to reduce the size and integration of the semiconductor integrated circuit, it is required to increase the resolution in the projection exposure apparatus for manufacturing the same. In order to achieve the short-wavelength of the light source for exposure in response to this requirement, as a next-generation semiconductor exposure light source continuous to the excimer laser device, an extreme ultraviolet light having a wavelength of 13 to 14 nm, especially a wavelength of 13.5 nm, has been developed. An extreme ultraviolet light source device (hereinafter also referred to as an EUV light source device) of light (hereinafter also referred to as EUV (Extreme Ultra Violet) light). In the EUV light source device, there are several methods for generating EUV light. One of them has a method of generating high-temperature plasma by heating excitation of EUV radiation seeds, and extracting EUV light emitted from the plasma. The EUV light source device adopting this method is roughly divided into an LPP (Laser Produced Plasma) EUV light source device and a DDP (Discharge Produced Plasma) method by means of high temperature plasma generation. The EUV light source device (200908815, for example, see Non-Patent Document 1). The LPP type EUV light source device uses EUV emission light from a high temperature plasma generated by irradiating a target such as a solid, a liquid, or a gas with a pulsed laser. On the one hand, the DDP type EUV light source device utilizes EUV radiation light from a high temperature plasma generated by current driving. In the above-described two-mode EUV light source device, as a radiation seed for emitting EUV light having a wavelength of 13.5 nm, that is, a high-temperature plasma material for EUV generation, it is known that there is a 氙 (左右) of about 1 〇. Ions, but as high-temperature plasma materials for obtaining stronger radiation intensity, lithium (Li) ions and tin (Sn) ions are valued. For example, Sn is a multiple of the E UV light radiation intensity ratio of the wavelength of 1 3 _ 5 nm for the input energy of the high temperature plasma to be several times larger than Xe. In recent years, as a method of generating high-temperature plasma, a method of irradiating a combined laser beam with a high-temperature plasma material and heating according to a large current of discharge (hereinafter also referred to as a mixing method) has been proposed. An EUV light source device using a hybrid method is described, for example, in Patent Document 1. The mixing method of the EUV light source device described in Patent Document 1 is performed by the following procedure. Fig. 4C of Patent Document 1 is an explanatory diagram of an EUV light source device using a hybrid system. In the same figure, the grounded outer electrode forms a discharge vessel. An insulator is provided inside the outer electrode, and an inner electrode on the high voltage side is provided inside the insulator. As the high-temperature plasma raw material, for example, a xenon (x e ) gas or a mixed gas of xenon (Xe) and helium (He) is used. This high temperature electricity -6- 200908815 slurry material gas is supplied from the gas path provided on the inner electrode to the discharge capacitor. An RF pre-ionization coil for pre-ionizing the high-temperature plasma raw material gas is disposed in the discharge vessel to focus the focusing lens for the laser beam. The occurrence of EUV radiation is performed as follows. First, the raw material gas introduced into the high-temperature plasma raw material in the discharge vessel is supplied to the RF pre-ionization coil by pulsed electric power, and is ready to be ionized. Thereafter, the laser beam passing through the condensing lens is condensed in a predetermined area in the discharge vessel, and the high-temperature plasma material gas is pre-ionized and thus decomposed near the laser focus. Thereafter, pulse power is applied between the outer electrode and the inner electrode to cause discharge. By the self-beaming effect of the discharge, the high-temperature plasma raw material is heated and excited to generate a high-temperature plasma, from which EUV radiation occurs. Here, near the laser focus, the conductivity is lowered by electron emission. Therefore, the position of the discharge channel in the discharge region (the space where the discharge between the electrodes occurs) is defined at the position where the laser focus is set. That is, the plasma self-bundling position is defined by the laser beam. Therefore, the positional stability of the point where EUV radiation is generated can be improved. When the EUV light source device is used as a light source for exposure, the accuracy of the pointing stability of the light-emitting point is required to be high. The hybrid EUV light source device described in Patent Document 1 is an example that can be said to meet the above requirements. Further, in recent years, it has been proposed to combine the vaporization of the irradiation of the laser beam with the heating of the high-current plasma for the high-temperature plasma raw material for EUV generation (hereinafter, also referred to as a high-temperature plasma raw material). A method of generating high-temperature plasma and generating EUV radiation from the high-temperature plasma (for example, refer to Patent No. 2,908,815, Patent Document 3, Patent Document 4, Patent Document 5, etc.). Hereinafter, this method will be referred to as a LAGDPP (Laser Assisted Gas Discharge Produced Plasma) method. In the EUV light source device of each of the above-described embodiments, as the radiation seed for emitting EU V light having a wavelength of 1 3 · 5 nm, that is, as a high-temperature plasma material, it is known that there is a 氙 (Xe) of about 1 〇. Ions, but as high-temperature plasma raw materials for obtaining stronger radiation intensity, lithium (Li) ions and tin (Sn) ions are highly valued. For example, Sri is a conversion ratio of the EUV light radiation intensity ratio of 13.5 nm for the input energy of the high temperature plasma to be several times larger than Xe. Hereinafter, the process of reaching EUV radiation in accordance with each of the above modes will be briefly described using Fig. 38. Fig. 38 is a view showing a condition of a state in which a high-temperature plasma raw material (described as an example of a fuel solid in Fig. 38) is used to satisfy an EUV radiation condition. In the same figure, the vertical axis represents the ion density (cm·3 ), and the horizontal axis represents the electron temperature (eV ). The same figure shows that when the vertical axis progresses downward, the high-temperature plasma material expands and the ion density decreases. When it progresses upward, it is compressed and the ion density increases. Further, when the horizontal axis is directed to the right direction, the high-temperature plasma material is heated to increase the electron temperature. In the LPP method, for example, a solid or liquid target such as a so-called Sn or Li high-temperature plasma raw material (shown as a fuel solid in the upper left of FIG. 8). In a solid state, a metal ion of S η or Li The density is approximately 1 022 cm·3 'and the electron temperature is below IEV), illuminating a strong laser -8-200908815 beam. The high-temperature plasma raw material that is irradiated with the laser beam is, for example, heated to a temperature of more than 300 00 eV, and is vaporized, and a high-temperature plasma is generated, and the generated high-temperature plasma is expanded, and soon after, the high-temperature electricity is generated. The ion density in the slurry is about 1〇17~1〇2%ηΓ3, and the electron temperature is about 20~3 OeV. EUV is emitted to the high-temperature plasma that achieves this state (path 1 of Figure 38). That is, in the LPP mode, the plasma generated by heating with the laser beam expands, and the plasma is sufficiently conditioned as described above (i.e., ion density 1〇17~l〇2C). Cnr3, electronic temperature is 20~30eV). On the other hand, in the DPP method, for example, a gas is placed in an internal discharge capacitor to form a gas-like high-temperature plasma material atmosphere, and discharge occurs between electrodes in the atmosphere to generate initial plasma. For example, Sn of a high-temperature plasma raw material is supplied into a discharge vessel in a gas state called SnH4, and an initial plasma is formed by discharge. The ion density of the initial plasma is, for example, about 10 cn 16 cn T 3 , and the electron temperature is, for example, about 1 eV or less, which is not sufficient as described above for the EUV radiation condition (that is, the ion density is 1〇17 to l〇2() cm_3, the electron temperature. It is 20 to 30 eV) (the initial state of the self-beam of Fig. 38). Here, the initial plasma is converged in the direction of the discharge current path by the action of the self-magnetic field of the direct current flowing between the electrodes. By this, the density of the plasma is increased, and the plasma temperature is also rapidly increased. This effect is hereinafter referred to as the self-beam effect. By the heating according to the self-beam effect, the ion density of the plasma which becomes high temperature is 1〇17~1〇2, πΓ3, and the electron temperature is about 20~20eV, and EUV is emitted from the high temperature plasma (Fig. 38, 20090815 Path 2). That is, in the D P P mode, by the generated plasma being compressed, the electric paddle is sufficiently conditioned as described above (i.e., the ion density is 1 〇 17 to 102 GcnT3 and the electron temperature is 20 to 30 eV). Further, in the LAGDPP system, a target (high-temperature plasma raw material) such as a solid or a liquid is irradiated with a laser beam to vaporize a raw material to generate a gaseous high-temperature plasma atmosphere (initial plasma). Same as DPP. The ion density of the initial electric paddle is, for example, about 10 _ 16 cm _ 3 ', and the electron temperature is, for example, about leV or less, and is not sufficient as described above for the EUV radiation condition (that is, the ion density is 1 〇 17 to 102 Gcm · 3 and the electron temperature is 20 to 30 eV. (The initial state of the self-beam in Fig. 38). Then, by the compression and heating driven by the discharge current, the ion density of the plasma which becomes high temperature is 1〇17~l〇2()cnr3, and the electron temperature reaches about 20~20eV, and EUV is emitted from the high temperature plasma. An example of LAGDPP is described in Patent Document 3, Patent Document 4, and Patent Document 5. It is described that a high-temperature electric paddle material is vaporized by laser irradiation to generate "cold plasma", and a high-temperature electric paddle is generated by a self-beam effect depending on a discharge current, and EUV is emitted from the high-temperature plasma. That is, according to the conventional example, the heating driven by the discharge current according to the LAGDPP method is the same as the DPP method, and the self-beam effect is utilized. That is, in Fig. 38, a high temperature plasma having sufficient EUV radiation conditions is formed via path 3 - path 2. In the case of the LPP method, the irradiation of the laser beam to the high-temperature plasma generated by the high-temperature plasma raw material is progressed and expanded in a short time to be cooled. Therefore, the high-temperature plasma that has reached the EUV radiation condition is cooled in a short period of time (for example, -10-200908815 10 ns), so that EUV radiation is not sufficient, and EUV radiation from the plasma is stopped. On the one hand, in the case of the DPP mode or the LAGDPP mode, the pulsed discharge current flows between the discharge electrodes as described above, and the initial plasma of the high-temperature plasma raw material is compressed and heated by the self-beam effect to reach the EUV emission condition. However, the high-temperature plasma that is converged in the direction of the discharge current path rapidly decreases in the discharge current direction in a short period of time, and the self-beam effect disappears in a short time, and the density is lowered while being cooled. . As a result, the plasma in the discharge field is such that EUV radiation conditions are not sufficient, and EUV radiation from the plasma is stopped. Moreover, the discharge between the electrodes begins with vacuum arc discharge of a wide range of laser triggers, with the supply of high temperature plasma feedstock moving to gas discharge (including self-beam discharge). Thereafter, a discharge column (plasma column) is formed, but the "discharge field" in the specification of the present invention is defined as a space including all of the discharge phenomena. Further, in the above-described discharge field, as the discharge column (plasma column) grows, the internal current density increases and the gas discharge occurs, and the discharge drive current in the discharge column flows dominantly. The spatial domain of high current density is defined as a "discharge channel." Here, the discharge channel is in the field in which the discharge drive current flows dominantly, and thus the discharge channel is also referred to as a discharge path or a discharge current path. Hereinafter, the long pulse of EUV radiation will be described. As described above, EUV radiation is pulsed in a short time. As a result of -11 - 200908815, the energy conversion efficiency is significantly reduced. When an EUV light source device is used as a light source for semiconductor exposure, the EUV light source device is required to operate at two high efficiency and high output as much as possible. If high-efficiency EUV generation conditions can be maintained for a long time, it can be a high-efficiency, high-output EUV light source. As a result, long pulsed luminescence pulse width can be expected. Patent Document 6 and Patent Document 7 disclose a method of long-pulsing EUV radiation in an EPP generator of the DPP system. Hereinafter, the conventional long pulse method will be described with reference to Figs. 3 and 4, based on Patent Documents 6, and 7. Fig. 39 and Fig. 40 are diagrams showing the relationship between (a) plasma current I, (b) plasma radius column r, (c) EUV radiation output for the elapsed time from the start of discharge, on the horizontal axis. Indicates time, while the vertical axis represents the plasma current I, the radius r of the plasma column, and the EUV radiation output. The long pulse of EUV radiation in Patent Documents 6, 7 can be realized by controlling the heating and compression engineering of the separation plasma and the maintenance work of the high temperature and high pressure state in the DPP type EUV generator. As shown in Fig. 39, in the conventional DDP method, the waveform of the plasma current I flowing inside the same plasma column formed between a pair of electrodes is increased as the elapsed time starts after the discharge starts. And the waveform that will be reduced by the peak. Hereinafter, in order to make it easy to understand, the waveform of the current I is made into a sinusoidal waveform. As the plasma current I increases, heating and compression of the plasma occurs. That is, the radius r of the plasma column that occurs is gradually decreased by the self-beaming effect with the current I of the electric paddle, and the plasma current I 値 begins to fall after the peak -12-200908815 Time becomes the smallest. In the vicinity of the peak of the waveform of the plasma current I, when the plasma temperature and the ion density reach a predetermined range (for example, as shown in Fig. 3, the electron temperature is 5 to 200 eV, and the ion density is 1 〇 17 to l 〇 2 EUV radiation occurs between periods A of ° cm_3 or so. However, the waveform peak of the electric current I is passed. Then, the current 値 decreases with the passage of time, so the self-beam effect is also weakened, causing the plasma to expand and lower the temperature of the electric paddle. The expanded plasma is capable of rapid detachment from the field of discharge with large motion energy. As a result, EUV radiation is ended. The duration of EUV radiation is, for example, only about 1 〇 ns. On the other hand, the method described in Patent Documents 6 and 7 is such that the waveform of the plasma current I flowing between the pair of electrodes is a waveform as shown in Fig. 40. That is, the waveform of the plasma current I increases with the elapsed time after the start of discharge, and is near the peak ( (for example, when the plasma is self-beamed and the EUV emission starts), and then the elapsed time Also increased. As shown in Fig. 40, the waveform of the plasma current I is formed by the heating current waveform portion (M) and the closed current waveform portion (N) which is continuous therewith. The heating current waveform (Μ) is equivalent to the timing of the waveform of the plasma current I shown in Fig. 39. In Fig. 40, for easy understanding, the heating current waveform portion (Μ) is expressed as a sinusoidal waveform. During the heating current waveform portion (Μ), the plasma current I is increased while heating and compression of the plasma occurs. That is, the radius r of the generated plasma is gradually decreased by the self-beaming effect as the flowing plasma current I', and becomes minimum when the plasma current I has passed the peak 値 and starts to fall. In the vicinity of the peak of the waveform of the current I of the plasma-13-200908815, the plasma temperature and the ion density reach the specified range (for example, as shown in Fig. 38, the electron temperature is 5 to 200 eV, and the ion density is 1〇17~ L〇2t) cm_3 or so) 'EUV radiation occurs. After the EUV radiation occurs, the waveform of the plasma current I is shifted to the closed current waveform portion (N). As described above, the plasma compressed by the self-beaming effect is intended to expand with a large motion energy. Here, if the intensity of the plasma current 1 is increased and the self-magnetic field is strongly acted on, the plasma to be expanded can be maintained in a compressed bear. The plasma pressure in the self-bundling state as described above is taken as ppp', the plasma density is taken as npp', the Boltzmann constant is taken as k, and when the plasma temperature is taken as Tpp, the plasma is self-beamed. The pressure Ppp is proportional to nppkTpp.
Ppp〇cnPpkTpp (101) 一方面,依電漿電流I所製作的自我磁場B的壓縮壓 力PB,是將真空中的導磁率作爲#〇’而將電漿半徑作爲 時,成爲 Ρ β ^ (_1 0 I / 2 7Γ Γ (102) 在此,滿足 P B ^ Ppp (103) 的條件,則電漿是被維持自束狀態。在此’自束狀態 的電漿,是成爲電漿密度npp及電漿溫度Tpp大的高溫電 漿之故,因而爲了成立(103)式,必須增大電漿電流 亦即,電漿被自束之後才增大電漿電流1 ’然而藉由 -14- 200908815 將電流値維持在一定,來維持自束狀態,並維持 及離子密度處於所定範圍內的狀態(電漿半徑小 〇 理論上,電漿溫度及離子密度被維持在處於 內的狀態的期間(第40圖的期間B ),是繼續3 放射。亦即EUV放射的長脈衝化成爲可能。 在第40圖,表示將電漿被自束而電漿半徑 的時機,作爲從加熱電流波形部(Μ )對閉合電 (Ν )的移行點的例子。 又,實際上,即使具有維持如超過加熱電流 Μ )的峰値的電流値峰値的閉合電流波形部(Ν 電流I ’藉由依流體不穩定性的成長的電漿柱的 理由’也很難將高溫電漿長時間地維持在壓縮的 以,閉合電流波形部(Ν )是不久也隨著時間的 少,自束效應也減弱,電槳會膨脹,而電漿溫度 結果’終了 EUV放射。在專利文獻6的例子, 將EUV輸出的維持時間(高溫電漿的維持時間 約3 0 n s的長脈衝。 第41圖是表示用以實現專利文獻6,7所; 放射的長脈衝化方法的DPP方式EUV光源裝置 〇 高溫電漿原料由原料供應•排氣單元1 6被 電容器的腔1內。高溫電漿原料是在腔1內的高 生部1 〇用以形成放出波長1 3 . 5 nm的EUV放射 電漿溫度 的狀態) 所定範圍 萑行 EUV 成爲最小 流波形部 波形部( )的電漿 崩壞等的 狀態。所 經過而減 會降低。 記載著可 )作成大 t 的 EUV 的構成例 導入至放 溫電漿發 的放射種 -15· 200908815 米子的原料,例如爲氙(Xe )或Sn蒸氣。被導入的高溫電 獎原料是流在腔1內而到達氣體排出口 17。 原料供應•排氣單元16是具有真空泵等的排氣手段 (未圖示)’而排氣手段是與腔的氣體排出口 17相連接 〇 亦即,到達至氣體排出口 1 7的高溫電漿原料,是藉 由具備有原料排氣•供應單元1 6的排氣手段被排出。 在腔1內經由絕緣材If配置有環狀的第1主放電電 極(陰極)11與第2主放電電極(陽極)12。腔1是由以 導電材所形成的第1主放電電極側的第1容器1 d,及以相 同導電材所形成的第2主放電電極側的第2容器1 e所構 成。此些第1容器Id與第2容器le,是藉由上述絕緣材 1 f被分離、絕緣。 腔1的上述第2容器Id與第2主放電電極12是被接 地’而在上述第1容器Id與第1主放電電極11,從脈衝 電力發生部5施加有大約-5kV〜-20kV的電壓。結果,在 環狀的第1,第2的各放電電極1 1,1 2間的高溫電漿發生 部10發生放電,而藉由如上述的自束效應生成著高溫電 漿,從該高溫電漿發生波長1 3 · 5 nm的E UV放射。所發生 的EUV放射,是藉由被設於第2主放電電極1 2側的EUV 聚光鏡2被反射,而由EUV光取出部7出射至未圖示的 照射部。 可是,表示於第40 ( a )圖的電漿電流(放電電流) 波形。是例如如以下地所得到。在具有正弦波形的電流, -16- 200908815 重疊其他的不是正弦波的其他電流。亦即’在具有加熱電 流波形部(Μ )的電流,重疊與加熱電流波形部(M )不 相同的圖型的電流,而形成閉合電流波形部(N )。 爲了得到此種電流波形,把高電壓脈衝發生部5 ’例 如並聯地構成具有如第4 1圖的獨立的開關元件S W 1 ’ S W 2的放電電路部。 表示於第41圖的脈衝電力發生部5’是電容器C1’ 開關SW1的串聯電路所構成的放電電路部A1’及電容器 C 2,開關S W 2的串聯電路所構成的放電電路部A 2 ’對於 負荷(第1主放電電極11’第2主放電電極12)並聯地 連接所構成。在此,高電壓電源CH是用以充電電容器C1 ,C2者。又,線圏L1是表示電容器C1的寄生電感及合 成電容器C1,開關SW1,負荷所製作的電路環路的電感 的電感成分。同樣地’線圈L2是表示電容器C2的寄生電 感及合成電容器C2 ’開關SW2,負荷所製作的電路環路 的電感的電感成分。又,各二極體D!,D2,是被儲在各 電容器C 1,C 2的電性能僅移行至負荷的方式,用以規制 電流方向者。 表示於第41圖的高電壓脈衝發生部,是如下地進行 動作。首先,藉由高電壓電源CH,經由各二極體Di’D2 進行充電各放電電路的電容器Cl,C2。之後,導通放電 電路部1的第1開關S W1,俾將被儲在第1電容器C1的 電性能施加於第1主放電電極1 1,第2主放電電極12間 而開始放電。這時候,流在第1放電電極1 1與第2放電 -17- 200908815 電極12間的電流,是被使用於電漿的自束。亦即’藉由 依自束效應的焦耳加熱,生成著高溫電漿。該電流是在第 4 0 ( a )圖的波形中相當於加熱電流波形部(Μ)。 然後,藉由電漿的自束效應,在開始波長1 3 · 5 nm的 EUV光的放出的時機,導通放電電路部A2的第2開關 SW2,將被儲在第2電容器C2的電性能施加於第1主放 電電極1 1,第2放電電極2b間,則來自第2電容器C2 的電流相加於流在第1放電電極1 1與第2放電電極2b間 的電流。該電流爲被使用作爲用以維持高溫高密度電漿的 自束狀態的電流。在第40 ( a )圖的波形中,相當於閉合 電流波形部(N )。 又,第1開關S W1,第2開關S W 2的控制,原料供 應•排氣單元1 6的控制,是藉由主控制器26所進行。主 控制器2 6是依據來自曝光機的控制部2 7的動作指令訊號 ,來控制上述控制要素。 〔非專利文獻1〕: 「石印術用EUV (極端紫外)光 源硏究的現狀與將來展望」,j. Plasma Fusion Res. Vol. 79. No.3, P219-260, 2003 年 3 月 〔專利文獻1〕:日本特表2005-522839號 〔專利文獻2〕:日本特開2〇〇4_214656號公報 〔專利文獻3〕:日本特表2007-515741號公報 〔專利文獻4〕:日本特表2〇〇7_5〇546〇號公報 〔專利文獻5〕:國際公開第2005/101924小冊子 〔專利文獻6〕:國際公開第2006/120942小冊子 -18- 200908815 〔專利文獻7〕:日本特開2007- 1 23 1 3 8號公報 〔專利文獻8〕:日本特表2002-504746號公報 【發明內容】 然而,在表示於專利文獻1的裝置的構成,是有如下 的問題。 依照上述EUV光源裝置,藉由雷射射束的照射,劃 定有放電通道的位置。然而,擬實現生成效率優異的EUV 放射,必須將放電通道的高溫電漿原料(氣體)分布設定 在所定的空間密度分布。 亦即,即使放電通道的位置被劃定,例如放電通道的 高溫電槳原料(氣體)的密度分布不是所定的空間密度分 布,則由藉由放電所生成的電漿也不會發生波長13.5nm 的EUV光。 在專利文獻1的EUV光源裝置,原料氣體是從設於 內側電極的氣體路徑供應於放電容器內。然而,能動性地 無法控制放電通道的高溫電漿原料(氣體)的空氣密度分 布的情形之故,因而並不一定在放電通道中,就可得到適 用於EUV放射的高溫電漿原料(氣體)的空間密度分布 〇 一方面,在上述的習知技術的EUV放射的長脈衝化 方法中,表示於專利文獻6,7的EUV放射的長脈衝化, 是在DDP方式的EUV發生裝置中,分離電漿的加熱及壓 縮工程與高溫高壓狀態的維持工程而藉由控制可實現。亦 -19- 200908815 即,如第4 0 ( a )圖所示地,爲了維持電漿的自束狀態’ 與習知的DDP方式相比較,電漿到達自束狀態之後的電 漿電流I値,成爲比電漿到達至自束狀態之前的電漿電値 I値還大的方式,必須將能量供應於放電空間。 終了 E U V放射之後,供應於放電空間的能量是被轉 換成熱,採用習知的長脈衝化方法的DPP方式的EUV發 生裝置中,爲了維持電發的自束狀態,流著比未採用長脈 衝化技術的一般性的DPP方式還大的放電電流。所以’在 此種EUV發生裝置中,與習知的DPP方式的EUV發生裝 置相比較,對於電極的熱輸入會變大。所以,藉由熱負荷 使得電極的一部分熔融,蒸發,或是被濺鍍而成爲空乏, 而該空乏成爲在EUV聚光鏡容易發生給予損傷的問題。 又,爲了維持電槳的自束狀態,如第40 ( a )圖所示 地,必須變更電流I的波形。在此,藉由表示於第40 ( a )圖的電漿電流I的波形的加熱電流波形部(Μ ),電漿 被自束成高溫狀態的時間是大約1 〇ns,而爲了維持自束狀 態,在該期間內生成著電漿電流I的波形的閉合電流波形 部(N )的方式必須流著電漿電流I。 亦即,流著用以生成電流波形的閉合電流波形部(N )的電流的時間的容許誤差是必須作成大約1 〇ns以下, 而在開關S W 1 ’ S W 2的動作時機的同步,被要求高精度的 控制。 本發明是鑑於如上述的事項而創作者,本發明的第1 課題’是提供可劃定放電通道的位置,而且可適當設定該 -20- 200908815 放電通道的高溫電漿原料(氣體)的密度的EUV光源裝 置,以及EUV發生方法。 又,本發明的第2課題,是提供可達成上述第1課題 ,又如習知地對電極給予大熱負荷。且不需要高精度的控 制,可實現EUV放射的長脈衝化的極端紫外光發生方法 及極端紫外光光源裝置。 本發明的EUV光源裝置,對於放出波長13.5nm的 EUV光的放射種籽,亦即,對於高溫電漿用原料的固體或 液體的Sn或Li等,藉由照射第1能量射束使之氣化。被 氣化的高溫電漿原料,是以能量射束所入射的高溫電漿原 料表面的法線方向作爲中心,而以所定速定擴展。 因此,藉由第1能量射束的照射被氣化而以所定速度 擴展的高溫電漿原料,是藉由適當地設定放電領域與原料 的位置,對原料的第1雷射射束的照射方向,第1能量射 束的照射能量等,被供應於放電領域。 作爲能量射束,可採用雷射射束、離子射束、電子射 束等。 在此,藉由適當設定第1能量射束的強度(能量), 照射方向,可成爲將放電領域的氣化的高溫電漿原料的空 間密度分布設定在所定分布。 一方面,藉由將第2能量射束照射在放電領域位置。 可成爲開始放電,同時將放電通道的位置劃定於第2能量 射束的照射位置。例如,第2能量射束爲雷射射束時,藉 由將雷射射束(起動用雷射射束)被聚光於放電領域的所 -21 - 200908815 定位置,放電通道的位置’可成爲將雷射焦點劃定在所設 定的位置。所以,可提昇E U V放射的發生點的位置穩定 性。 又,如上述地,在第2能量射束被照射在放電領域的 所定位置的時機開始放電之後’因而藉由控制第2能量射 束的照射時機,成爲可控制放電的開始時機。 在此,藉由適當設定第1能量射束的照射時機與第2 能量射束的照射時機,在被劃定位置的放電通道中,在空 間密度分布在所定分布的氣化原料的至少一部分到達至該 放電通道的狀態下,放電電流的大小成爲爲了得到所定強 度的EUV放射所必需的放電電流値的下限以上的方式, 成爲可發生放電。 結果,成爲可實現有效率的E U V放射。 以下’針對於(1 )第1能量射束(原料用能量射束 )’第2能量射束(起動用能量射束)的照射時機,(2 )電極位置’原料供應位置,原料用能量射束的照射位置 的互相關係’ (3 )原料用能量射束的能量加以說明,以 下,作爲能量射束,以雷射射束作爲例子。 (1 )時機 以下’使用時序圖’來說明本發明的EUV生成方式 〇 第1圖及第2圖是表示用以說明本發明的EUV生成 方式的時序圖’第1圖是表示第1雷射射束比第2雷射射 -22- 200908815 束還快速照射的情形,而第2圖是表示第1雷射射束比第 2雷射射束還慢速照射的情形。 首先,如第1圖及第2圖所示地,將觸發訊號輸入( 時刻Td )至將脈衝電力施加於一對電極間的脈衝電力供 應手段的開關手段(例如IGBT ),俾將開關手段作成導 通狀態〔參照第1圖,第2 ( a)圖〕。Ppp〇cnPpkTpp (101) On the one hand, the compression pressure PB of the self-magnetic field B produced by the plasma current I is Ρ β ^ (_1) when the magnetic permeability in the vacuum is taken as #〇' and the plasma radius is taken as 0 I / 2 7Γ Γ (102) Here, when the condition of PB ^ Ppp (103) is satisfied, the plasma is maintained in a self-bundling state. Here, the plasma in the self-bundling state becomes the plasma density npp and electricity. In the case of high temperature plasma with a high Tpp temperature, in order to establish (103), it is necessary to increase the plasma current, that is, the plasma is increased after the self-beaming, and the plasma current is increased 1 ' however, by -14-200908815 The current 値 is maintained at a constant level to maintain the self-bundling state, and the ion density is maintained within a predetermined range (the plasma radius is small, theoretically, the plasma temperature and the ion density are maintained in an in-state state (40th) In the period B) of the figure, it is continued 3 radiation, that is, long pulse of EUV radiation becomes possible. In Fig. 40, the timing at which the plasma is self-beamed and the plasma radius is taken as the slave heating current waveform portion (Μ) An example of a transition point for a closed electric (Ν). Even if there is a closed current waveform portion (the current I' of a plasma column that grows by fluid instability) with a peak current 维持 that maintains a peak value such as a heating current Μ), it is difficult to heat the high temperature plasma. The time is maintained at the compression, and the closed current waveform portion (Ν) is soon also less with time, the self-beam effect is also weakened, the electric paddle is expanded, and the plasma temperature results in the end of EUV radiation. In Patent Document 6, For example, the sustain time of the EUV output (the long pulse of the high temperature plasma maintenance time of about 30 ns. Fig. 41 is a DPP type EUV light source device for realizing the long pulse method of radiation; 〇 High-temperature plasma raw material is supplied from the raw material • The exhaust unit 16 is inside the cavity 1 of the capacitor. The high-temperature plasma raw material is the high-temperature part 1 in the cavity 1 to form the EUV radiation plasma with a discharge wavelength of 13. 5 nm. In the state of the temperature, the EUV is in a state in which the plasma of the waveform of the minimum flow waveform portion is collapsed, etc., and the decrease is reduced. The configuration example of EUV that can be made to be large t is introduced into the temperature release. Electricity The radiation source -15· 200908815 The raw material of rice is, for example, Xe or Sn vapor. The introduced high-temperature electric prize material flows into the chamber 1 and reaches the gas discharge port 17. The raw material supply and exhaust unit 16 is An exhaust means (not shown) of a vacuum pump or the like is provided, and the exhaust means is connected to the gas discharge port 17 of the chamber, that is, the high-temperature plasma raw material that reaches the gas discharge port 17 is provided with the raw material. The exhaust means of the exhaust gas supply unit 16 is discharged. In the chamber 1, an annular first main discharge electrode (cathode) 11 and a second main discharge electrode (anode) 12 are disposed via the insulating material If. The cavity 1 is composed of a first container 1d on the first main discharge electrode side formed of a conductive material, and a second container 1e on the second main discharge electrode side formed of the same conductive material. The first container Id and the second container le are separated and insulated by the insulating material 1f. The second container Id and the second main discharge electrode 12 of the chamber 1 are grounded, and a voltage of about -5 kV to -20 kV is applied from the pulse power generating portion 5 to the first container Id and the first main discharge electrode 11. . As a result, discharge occurs in the high temperature plasma generating portion 10 between the first and second discharge electrodes 11 and 1 2 in the ring shape, and high temperature plasma is generated by the self-beam effect as described above, from which the high temperature electricity is generated. The slurry produced E UV radiation at a wavelength of 1 3 · 5 nm. The EUV radiation generated is reflected by the EUV condensing mirror 2 provided on the second main discharge electrode 1 side, and is emitted from the EUV light extraction unit 7 to an irradiation unit (not shown). However, the plasma current (discharge current) waveform shown in Fig. 40 (a) is shown. It is obtained, for example, as follows. In currents with a sinusoidal waveform, -16-200908815 overlaps other currents that are not sinusoidal. That is, the current having the heating current waveform portion (Μ) overlaps the current of the pattern different from the heating current waveform portion (M) to form the closed current waveform portion (N). In order to obtain such a current waveform, the high voltage pulse generating portion 5' is connected in parallel to, for example, a discharge circuit portion having the independent switching elements S W 1 ' S W 2 as shown in Fig. 41. The pulse power generating unit 5' shown in Fig. 41 is a discharge circuit portion A1' and a capacitor C2 which are formed by a series circuit of the capacitor C1' switch SW1, and a discharge circuit portion A 2' formed by a series circuit of the switch SW2. The load (the first main discharge electrode 11' and the second main discharge electrode 12) are connected in parallel. Here, the high voltage power source CH is used to charge the capacitors C1, C2. Further, the line 圏 L1 is an inductance component indicating the parasitic inductance of the capacitor C1 and the inductance of the circuit loop formed by the composite capacitor C1, the switch SW1, and the load. Similarly, the coil L2 is an inductance component indicating the parasitic inductance of the capacitor C2 and the inductance of the circuit loop created by the load of the combined capacitor C2' switch SW2. Further, each of the diodes D!, D2 is a mode in which the electrical properties stored in the respective capacitors C1, C2 are only shifted to the load to regulate the current direction. The high voltage pulse generating unit shown in Fig. 41 operates as follows. First, the capacitors C1, C2 of the respective discharge circuits are charged via the respective diodes Di'D2 by the high-voltage power source CH. Thereafter, the first switch S W1 of the conduction/discharge circuit unit 1 is applied between the first main discharge electrode 1 and the second main discharge electrode 12 to start discharging, and the electrical properties stored in the first capacitor C1 are applied. At this time, the current flowing between the first discharge electrode 1 1 and the second discharge -17 - 200908815 electrode 12 is used for self-beaming of the plasma. That is, high temperature plasma is generated by Joule heating by the self-beam effect. This current corresponds to the heating current waveform portion (Μ) in the waveform of the 40th ( a ) diagram. Then, by the self-beam effect of the plasma, the second switch SW2 of the discharge circuit unit A2 is turned on to apply the electric property stored in the second capacitor C2 at the timing of starting the emission of the EUV light having a wavelength of 1 3 · 5 nm. Between the first main discharge electrode 1 and the second discharge electrode 2b, a current from the second capacitor C2 is added to the current flowing between the first discharge electrode 1 1 and the second discharge electrode 2b. This current is used as a current for maintaining the self-bundling state of the high-temperature high-density plasma. In the waveform of Fig. 40 (a), it corresponds to the closed current waveform portion (N). Further, the control of the first switch S W1 and the second switch S W 2 and the control of the material supply/exhaust unit 16 are performed by the main controller 26. The main controller 26 controls the control elements based on the operation command signals from the control unit 27 of the exposure machine. [Non-Patent Document 1]: "The current status and future prospects of EUV (Extreme Ultraviolet) light source for lithography", j. Plasma Fusion Res. Vol. 79. No.3, P219-260, March 2003 [Patents Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. 〇〇7_5〇546〇 [Patent Document 5]: International Publication No. 2005/101924 pamphlet [Patent Document 6]: International Publication No. 2006/120942 pamphlet -18-200908815 [Patent Document 7]: JP-A 2007- 1 [Patent Document 8] Japanese Patent Application Publication No. 2002-504746. SUMMARY OF THE INVENTION However, the configuration of the device disclosed in Patent Document 1 has the following problems. According to the above EUV light source device, the position of the discharge channel is defined by the irradiation of the laser beam. However, in order to achieve EUV emission with excellent generation efficiency, it is necessary to set the high-temperature plasma raw material (gas) distribution of the discharge channel to a predetermined spatial density distribution. That is, even if the position of the discharge channel is delimited, for example, the density distribution of the high-temperature electric paddle material (gas) of the discharge channel is not a predetermined spatial density distribution, the plasma generated by the discharge does not occur at a wavelength of 13.5 nm. EUV light. In the EUV light source device of Patent Document 1, the material gas is supplied from the gas path provided on the inner electrode to the discharge vessel. However, since it is impossible to control the air density distribution of the high-temperature plasma raw material (gas) of the discharge channel, it is not necessarily in the discharge channel, and a high-temperature plasma raw material (gas) suitable for EUV radiation can be obtained. Spatial density distribution On the one hand, in the long pulse method of EUV radiation of the above-described prior art, the long pulse of EUV radiation shown in Patent Documents 6, 7 is in the DDP type EUV generating apparatus, and the electric power is separated. The heating and compression engineering of the slurry and the maintenance of the high temperature and high pressure state can be achieved by control. -19- 200908815 That is, as shown in Fig. 4 (a), in order to maintain the self-bundling state of the plasma, the plasma current I値 after the plasma reaches the self-bundling state is compared with the conventional DDP method. It becomes a mode larger than the plasma electric current before the plasma reaches the self-bundling state, and energy must be supplied to the discharge space. After the end of EUV radiation, the energy supplied to the discharge space is converted into heat. In the DPP-type EUV generator using the conventional long-pulsation method, in order to maintain the self-bundling state of the electric hair, the flow ratio is longer than the long pulse. The general DPP method of the technology also has a large discharge current. Therefore, in such an EUV generator, the heat input to the electrode becomes larger as compared with the conventional DPP type EUV generator. Therefore, a part of the electrode is melted, evaporated, or sputtered by the heat load to become a depletion, and this depletion becomes a problem that the EUV concentrating mirror is liable to be damaged. Further, in order to maintain the self-bundling state of the electric blade, the waveform of the current I must be changed as shown in Fig. 40(a). Here, by the heating current waveform portion (Μ) of the waveform of the plasma current I shown in the 40th (a)th, the time during which the plasma is self-beamed to a high temperature state is about 1 〇ns, and in order to maintain the self-beam In the state in which the closed current waveform portion (N) of the waveform of the plasma current I is generated during this period, the plasma current I must flow. That is, the allowable error of the current flowing through the closed current waveform portion (N) for generating the current waveform is required to be approximately 1 〇 ns or less, and the synchronization timing of the operation of the switch SW 1 'SW 2 is required. High precision control. The present invention has been made in view of the above-described problems, and the first object of the present invention is to provide a position at which a discharge channel can be defined, and to appropriately set the density of a high-temperature plasma raw material (gas) of the discharge channel of the -20-200908815. EUV light source device, and EUV generation method. Further, a second object of the present invention is to provide the above-described first problem and to impart a large heat load to an electrode as is conventionally known. It does not require high-precision control, and can realize the long-pulsed extreme ultraviolet light generation method of EUV radiation and the extreme ultraviolet light source device. In the EUV light source device of the present invention, the radiation seed of the EUV light having a wavelength of 13.5 nm is released, that is, the solid or liquid Sn or Li of the raw material for the high-temperature plasma is irradiated with the first energy beam. Chemical. The vaporized high-temperature plasma raw material is centered on the normal direction of the surface of the high-temperature plasma raw material incident on the energy beam, and is expanded at a predetermined speed. Therefore, the high-temperature plasma raw material which is vaporized by the irradiation of the first energy beam and expands at a predetermined speed is an irradiation direction of the first laser beam of the raw material by appropriately setting the position of the discharge region and the material. The irradiation energy of the first energy beam or the like is supplied to the discharge field. As the energy beam, a laser beam, an ion beam, an electron beam, or the like can be employed. Here, by appropriately setting the intensity (energy) of the first energy beam and the irradiation direction, the spatial density distribution of the high-temperature plasma raw material that vaporizes in the discharge region can be set to a predetermined distribution. In one aspect, the second energy beam is illuminated at a location in the discharge region. The discharge can be started, and the position of the discharge channel is defined at the irradiation position of the second energy beam. For example, when the second energy beam is a laser beam, the position of the discharge channel can be set by concentrating the laser beam (the starting laser beam) at the position of the -21,08,08,815, discharge field. Become the laser focus at the set position. Therefore, the positional stability of the occurrence point of E U V radiation can be improved. Further, as described above, after the second energy beam is irradiated to a predetermined position in the discharge region, the discharge is started, and thus the timing of the controllable discharge is controlled by controlling the timing of the irradiation of the second energy beam. Here, by appropriately setting the irradiation timing of the first energy beam and the irradiation timing of the second energy beam, the spatial density distribution reaches at least a part of the predetermined distribution of the vaporized material in the discharge channel at the defined position. In the state of the discharge channel, the magnitude of the discharge current is equal to or higher than the lower limit of the discharge current 必需 necessary for obtaining EUV radiation of a predetermined intensity, and discharge can occur. As a result, efficient E U V radiation can be achieved. In the following, 'the timing of the irradiation of the first energy beam (source energy beam)' of the second energy beam (starting energy beam), (2) the electrode position 'the raw material supply position, the raw material energy shot The relationship between the irradiation positions of the beams' (3) The raw material is explained by the energy of the energy beam. Hereinafter, as the energy beam, a laser beam is taken as an example. (1) Timing The following describes the EUV generation method of the present invention by using a timing chart. FIGS. 1 and 2 are timing charts for explaining the EUV generation method of the present invention. FIG. 1 is a view showing the first laser. The beam is more rapidly illuminated than the second laser -22-200908815 beam, and the second figure shows the case where the first laser beam is also slowly irradiated than the second laser beam. First, as shown in FIGS. 1 and 2, a trigger signal input (time Td) is applied to a switching means (for example, an IGBT) that applies pulse power to a pulse power supply means between a pair of electrodes, and a switching means is created. Conduction state [refer to Figure 1, Figure 2 (a)].
Atd後,電極間電壓到達至臨界値Vp〔參照同圖(b )〕。該臨界値Vp是發生放電時所流動的放電電流値成 爲臨界値Ip (有關於臨界値Ip的說明是如後述)以上時 的電壓値。亦即,在不足臨界値Vp而發生放電時,則放 電電流的峰値是未到達至臨限値Ip。 又,若仍未發生放電時,電極間電壓是到達至最大電 壓,而被維持〔同圖(b )的虛線〕。 在電極間電壓到達至臨界値Vp的時機以後的時機T2 (T2 = Td + Atd )中,使得第2雷射射束(起動用雷射射束 )被照射在放電領域〔參照同圖(c )〕。又,第2雷射 射束是照射在一對電極的任一方的電極也可以。以下,放 電領域是作爲也包括電極表面者。 藉由第2雷射射束(起動用雷射射束)的照射開始放 射,在Ati後,放電電流的大小到達至上述的臨界値ip〔 參照同圖(d )〕。該臨界値Ip是爲了得到的所定強度的 EUV放射所需的放電電流値的下限。又,將放電電流値爲 臣品界値IP以上的期間作爲Δ t p。 在該時機(Τ2 + ΔΤΠ )以後的Atp期間中,藉由第!雷 -23- 200908815 射射束(原料用雷射射束)被氣化,以所定速度擴展的高 溫電漿原料中’空間密度分布爲所定分布的氣化原料的至 少一部分到達至放電領域的方式,第1雷射射束(被照射 至原料)。 從第1雷射射束被照射在原料的時機使得空間密度分 布爲所定分布的氣化原料的至少一部分到達至放電領域爲 止的時間作爲 Atg時,則在(T2 + Ati-Atg )〜(Τ2 + ΔΗ + △tp-Mg )期間中的時機(T1 ),原料用雷射射束是被照 射〔參照同圖(e )〕。藉由此,EUV光被放射〔參照同 圖(i )〕。 在此’第1圖是表示放電電流的上昇快速,第1雷射 射束(原料用雷射射束)照射後,第2雷射射束(起動用 雷射射束)被照射的例子。 一方面’第2圖是表示放電電流的上昇慢速,第2雷 射射束照射後’第1雷射射束被照射的例子。 (2 )針對於電極位置,原料供應位置,原料用雷射 射束的照射位置的互相關係 如上述地’在本發明的EUV光源裝置中,將藉由第! 雷射射束(原料用雷射射束)被氣化的高溫電漿原料到達 至放電領域。將該位置的例子表示於以下。 作爲例子’表示針對於將成爲第1雷射射束的靶的高 ^皿电原料的供應’作成液滴狀進行滴下的情形。又,高 '?皿電;;k原料的供應方法’是並未被限定於此者。例如,如 以後所示地’作成供應線狀的高溫電漿原料也可以。 -24- 200908815 第3圖是表示用以說明上述位置關係的槪略構成圖, 第3(a)圖是表示前視圖’第3(b)圖是表示俯視圖。 亦即’第3(b)圖是表不從箭號方向觀看弟3 (a)圖的 圖式。在同圖中,11是電極(陽極)’ 12是電極(陰極 ),2是極端紫外光聚光鏡(以下’也稱爲EUV聚光鏡) ,20是原料供應手段,21是原料,23是第1雷射射束( 原料用雷射射束)。 第1雷射射束23是對於滴下的高溫電漿原料2 1被照 射。照射位置是所滴下的高溫電漿原料2 1到達至放電領 域近旁的位置。 如第3圖所示的例子,板狀的一對電極1 1 ’ 1 2隔著 所定間隔被配置。放電領域是位於一對電極1 1 ’ 1 2的隔 開空間內。高溫電漿原料2 1是藉由原料供應手段20,朝 重力方向被供應對於一對電極Π’ 12與極端紫外光聚光 鏡2之間的空間,且放電領域近旁。 高溫電漿原料2 1是到達至放電領域近旁之際,第1 雷射射束2 3照射到高溫電漿原料21。藉由第1雷射射束 23的照射被氣化的高溫電槳原料,是以第1雷射射束23 所入射的高溫電漿表面的法線方向作爲中心擴展。 所以,當將第1雷射射束2 3,照射在藉由原料供應手 段2 0所供應的高溫電漿原料2 1表面的放電領域的一側, 則被氣化的高溫電漿原料2 1 ’,是朝放電領域的方向擴展 〇 在此,上述的EUV聚光鏡2,是構成光軸成爲一方向 -25- 200908815 的方式來設定聚光方向的斜入射光學系的情形較多。一般 在構成此種斜入射光學系,使用將複數枚薄凹面鏡高精度 地配置成嵌套狀構造的EUV聚光鏡。此種構造的EU.V聚 光鏡是藉由大致一致於光軸的支柱及從該支柱放射狀地延 伸的支撐體,支撐著上述的複數枚的薄凹面鏡。 在第3圖中,將第1雷射射束23從聚光鏡2所規定 的光軸方向導入而被照射到高溫電漿原料2 1。所以,若對 第1雷射射束23的照射位置與高溫電漿原料位置2 1的同 步產生偏移,則第1雷射射束23是會被照射在EUV聚光 鏡2,視情形,也對於EUV聚光鏡2有損傷的可能性。 如此地,在第1雷射射束23的誤照射時,使得第1 雷射射束23無法到達至EUV聚光鏡2的情形,是如第4 (a ),( b )圖所示地,將第1雷射射束23的進行方向 調整成無法達至EUV聚光鏡2的方向也可以。 可是,如上述地,藉由第1雷射射束2 3的照射被氣 化的高溫電漿原料,是以第1雷射射束2 3所入射的高溫 電漿原料表面的法線方向作爲中心擴展。所以當將第1雷 射射束23照射在面對於高溫電漿2 1表面的放電領域的一 側,則氣化後的高溫電漿原料2 1 是朝放電領域方向擴 展。 在此,藉由第1雷射射束2 3的照射被供應於放電領 域的氣化後的高溫電獎原料2 1'中’未有助於依放電的高 溫電漿形成者的一部分’或是電漿形成的結果而生成分解 的原子狀氣體的群的一部分’是作爲碎屑而與EUV光源 -26- 200908815 裝置內的低溫部接觸,而堆積。 例如,高溫電漿原料爲Sn時,其有助於高溫電 成者的一部分,或是,電漿形成的結果生成分解的原 氣體的Sn、Snx的所謂金屬群的一部分,是作爲碎屑 EUV光源裝置內的低溫部接觸,而製作錫鏡。 在此,如第4 ( b )圖所示地,藉由原料供應手段 得高溫電漿原料21供應於未面臨一對電極1 1,1 2的 聚光鏡2的空間側時,第1雷射射束23是使得氣化 高溫電漿原料21'被供應於放電領域的方式’從EUV 鏡2側被照射至高溫電槳原料2 1。 這時候,藉由第1雷射射束23的照射被氣化的 電漿原料,是朝放電領域及EUV聚光鏡2的方向擴 亦即,藉由對高溫電漿原料2 1的第1雷射射束23的 ,及發生在電極11 ’ 12間的放電’對於EUV聚光鏡 出碎屑。當碎屑堆積在EUV聚光鏡2時,則EUV聚 2對於1 3.5 nm的反射率降低,而會使EUV光源裝置 置性能劣化。 如此,如第3圖及第4 ( a)圖所示地’將高溫電 料供應於一對電極1 1,1 2與E U V聚光鏡2之間的空 且放電領域近旁的空間。 對於如此地所供應的高溫電漿原料2 1 ’將第1雷 束2 3如上述地’照射在面臨於高溫電漿原料表面的 領域的一側’則氣化後的高溫電漿原料2 1'是朝放電 的方向擴展,惟不會朝EU.V聚光鏡2的方向擴展。 漿形 子狀 而與 ,使 EUV 後的 聚光 高溫 展。 照射 2放 光鏡 的裝 漿原 間, 射射 放電 領域 亦即 -27- 200908815 ,如上述地藉由供應高溫電槳原料2 1,及設定第1雷射射 束23的照射位置,成爲可抑制碎屑進行EUV聚光鏡2的 情形。 在此,考量僅隔著所定距離的一對電極,如第5圖所 示爲柱狀的情形。第5 ( a )圖是表示俯視圖,第5 ( b ) 圖是表示前視圖。亦即,第5(b)圖是表示從箭號方向觀 看第5(a)圖的圖式。 這時候,即使將高溫電漿原料2 1供應於對於光軸垂 直的平面上的空間,且放電領域近旁,而將與第1雷射射 束23從與光軸垂直的方向照射高溫電漿原料2 1,氣化後 的高溫電漿原料2 1 ’,是也不會朝EUV聚光鏡2的方向擴 展。因此,對於高溫電漿原料21的第1雷射射束2 3的照 射,及藉由在電極1 Γ,1 2’間所發生的放電所生成的碎屑 ,是幾乎不會對EUV聚光鏡2進行。 又,當然,即使僅隔所定距離的一對電極爲柱狀時, 也如第3圖及第4 ( a )圖所示地,將高溫電漿原料藉由原 料供應手段,供應於一對電極與EU V聚光鏡之間的空間 ,且放電領域近旁的空間也可以。 (3 )針對於原料用雷射射束的能量 從第1雷射射束(原料用雷射射束)2 3被照射在原料 的時機一直到氣化原料的至少一部分到達至放電領域爲止 的時間Δ t g ’是藉由放射領域與第1雷射射束2 3所照射的 原料之距離,以及被氣化的原料擴展的速度求得。 -28- 200908815 在此,放電領域與第1雷射射束所照射的原料2丨白勺 距離,是依存於第1雷射射束2 3照射時的放電領域與原 料21的位置及對原料21的第1雷射射束23的照射方向 〇 一方面,如上述地’藉由第1雷射射束23的照射被 氣化的高溫電漿原料2 Γ ’是以第1雷射射束2 3所入射的 尚溫電槳原料表面的法線方向作爲中心,而以所定速度擴 展’上述所定的速度’是依存照射於原料2 1的第1雷射 射束2 3的照射能量。 結果’從第1雷射射束2 3照射於原料的時刻機一直 到空間密度分布爲所定分布的氣化原料的一部達到至放電 領域爲止的時間△ t g ’是依存於放電領域與原料2 1的位置 ’ kf於原料2 1的第1雷射射束2 3的照射方向,第1雷射 射束2 3的照射能量’藉由適當設定此些參數,被限定在 所定的時間。 又’藉由適當地設定此些參數’成爲也可將氣化的高 溫電漿原料的空間密度分布設定成所定分布。 在將上述的第1雷射射束(原料用雷射射束)2 3照射 於原料而進行氣化之際,藉由適當地選定第1雷射射束的 照射條件及放電電流,成爲也可進行上述的長脈衝化。 亦即’爲了維持依自束效應的電漿的壓縮狀態,不必 將大電流流在放電領域,維持充足如上述的EUV放射條 件(亦即,離子密度爲1〇i7〜1〇2〇cm·3,電子溫度爲20~ 3 OeV左右)的高溫電漿,而可實現EUV放射的長脈衝化 -29- 200908815 使用第6圖,針對於本發明的DPP方式的高溫電漿生 成加以說明。又,第6圖的縱軸與橫軸是與第3 8圖同樣 〇 對於被配置於放電領域外的固體或液體的高溫電漿原 料(在第6圖中,作爲例子記載著燃料固體),照射能量 射束。作爲能量射束,例如使用雷射射束。以下,以雷射 射束作爲例子加以說明。 照射著雷射射束的固體或液體的高溫電漿原料,是被 加熱而氣化,達到至放電領域的事先所形成的放電通道。 在此,被氣化的高溫電槳原料是成爲達到至放電領域時的 電漿內的離子密度爲1〇17〜l〇2t)cm_3左右,而電子溫度爲 1 eV以下左右的低溫電漿氣體的方式,適當地設定雷射射 束的照射能量。亦即,藉由將雷射射束照射於高溫電漿原 料,電槳內的離子密度是充足EUV放射條件,惟電子溫 度爲低溫的方式,形成低溫電漿氣體〔第6圖的路徑(I )]。 上述低溫電漿是供應於事先形成於電極間的放電領域 的放電通路,而該低溫電漿爲藉由放電電流被加熱。在此 ,有關於低溫電漿氣體的離子密度,已充足EUV放射條 件之故,因而如依習知的D P P方式的自束效果的壓縮效果 是小就可以。亦即,流在電極間的電流主要僅有助於低溫 電漿的加熱。藉由加熱,電漿的電子溫度達到至20〜30eV ,而從成爲EUV放射條件的高溫電漿,EUV被放射〔第6 -30- 200908815 圖的路徑(I丨)^ 在此,藉由將上述的低溫電漿氣體’連續地供應於事 先开/成於電極間的放電通道,成爲可實現E UV放射的長 脈衝化。以下’使用第7圖及第8圖,針對於長脈衝化方 法加以說明。 又,第7圖是表示多自束方式的情形,而第8圖是表 示非自束方式的情形。 第7圖是表示說明多自束方式時的電漿電流、低溫電 漿半徑、EUV放射的圖式。 在電極間供應電力,而在t = to的時機(藉由施加觸發 )開始真空放電而使得電流開始流動,形成有效電通道( 放電電流路徑)(第7 ( a )圖)。在電流I到達至下述的 臨界値Ip的時機tp,放電通道的斷面尺寸,是受到電流 的自我磁場的影響而變細。 一方面,在上述的時機tp,雷射射束被照射而氣化的 高溫電漿原料(亦即,相當於EUV放射條件的離子密度 而電子溫度低的低溫電漿氣體)作成選擇性地到達至流在 放電領域的細放電通道。 在此,電流的臨界値ip,將依電流的自我磁場的壓縮 壓力作爲Pb,而將電漿的壓力作爲pP時’設定成爲After Atd, the voltage between the electrodes reaches the critical 値Vp (refer to the same figure (b)). The critical enthalpy Vp is a voltage 値 when the discharge current flowing when the discharge occurs is a critical value 値Ip (the description of the critical 値Ip is as described later). That is, when the discharge occurs at a critical value 値Vp, the peak of the discharge current does not reach the threshold 値Ip. Further, if the discharge still does not occur, the voltage between the electrodes reaches the maximum voltage and is maintained (the dotted line in the same figure (b)). In the timing T2 (T2 = Td + Atd ) after the timing at which the voltage between the electrodes reaches the critical 値Vp, the second laser beam (the starting laser beam) is irradiated in the discharge field (refer to the same figure (c) )]. Further, the second laser beam may be an electrode that is irradiated on one of the pair of electrodes. Hereinafter, the field of discharge is as a person who also includes an electrode surface. The radiation is started by the irradiation of the second laser beam (the laser beam for starting), and after Ati, the magnitude of the discharge current reaches the above threshold ip [refer to the same figure (d)]. The critical enthalpy Ip is the lower limit of the discharge current 所需 required for the obtained EUV emission of a predetermined intensity. Further, the period in which the discharge current is equal to or higher than the IP level of the product is Δtp. In the Atp period after the timing (Τ2 + ΔΤΠ), by the first! Ray-23-200908815 The beam of radiation (the laser beam of raw materials) is vaporized, and the spatial density distribution of the high-temperature plasma raw material expanded at a predetermined speed is at least a part of the gasification raw material of a predetermined distribution reaching the discharge field. , the first laser beam (irradiated to the raw material). When the first laser beam is irradiated at the timing of the raw material so that the spatial density distribution is at least a part of the predetermined distribution of the vaporized raw material reaching the discharge region as Atg, then (T2 + Ati-Atg)~(Τ2 + ΔΗ + Δtp-Mg ) The timing (T1) during the period, the laser beam of the raw material is irradiated (refer to the same figure (e)). Thereby, the EUV light is radiated (refer to the same figure (i)). Here, the first diagram shows an example in which the rise of the discharge current is rapid, and the second laser beam (the laser beam for starting) is irradiated after the first laser beam (the laser beam for the raw material) is irradiated. On the other hand, Fig. 2 is a view showing an example in which the discharge current is slowly increased and the first laser beam is irradiated after the second laser beam irradiation. (2) The relationship between the electrode position, the material supply position, and the irradiation position of the laser beam for the raw material. The laser beam (the laser beam for the raw material) is vaporized by the high-temperature plasma material to reach the discharge field. An example of this position is shown below. As an example, 'the case where the supply of the high-electrode electric material which is the target of the first laser beam is dropped in a droplet shape is shown. Further, the method of supplying a high material is not limited thereto. For example, it is also possible to prepare a high-temperature plasma raw material which is supplied in a line shape as will be described later. -24- 200908815 Fig. 3 is a schematic structural view for explaining the above-described positional relationship, and Fig. 3(a) is a front view showing a top view. Fig. 3(b) is a plan view. That is, '3' (b) is a diagram showing the view of the brother 3 (a) from the direction of the arrow. In the same figure, 11 is the electrode (anode) '12 is the electrode (cathode), 2 is the extreme ultraviolet concentrating mirror (hereinafter 'also known as EUV concentrating mirror), 20 is the raw material supply means, 21 is the raw material, 23 is the first thunder The beam of radiation (laser beam for raw materials). The first laser beam 23 is irradiated to the dropped high temperature plasma material 2 1 . The irradiation position is a position where the dropped high-temperature plasma raw material 2 1 reaches the vicinity of the discharge region. As an example shown in Fig. 3, a pair of plate-shaped electrodes 1 1 ' 1 2 are arranged at predetermined intervals. The discharge area is located in the space between the pair of electrodes 1 1 ' 1 2 . The high-temperature plasma raw material 21 is supplied to the space between the pair of electrodes Π' 12 and the extreme ultraviolet concentrating mirror 2 in the direction of gravity by the raw material supply means 20, and is near the discharge area. When the high-temperature plasma raw material 21 reaches the vicinity of the discharge field, the first laser beam 2 3 is irradiated to the high-temperature plasma raw material 21. The high-temperature electric paddle material vaporized by the irradiation of the first laser beam 23 is spread around the normal direction of the surface of the high-temperature plasma incident on the first laser beam 23. Therefore, when the first laser beam 2 3 is irradiated to one side of the discharge region of the surface of the high-temperature plasma raw material 2 1 supplied by the raw material supply means 20, the vaporized high-temperature plasma raw material 2 1 In the above-described EUV condensing mirror 2, the above-described EUV condensing mirror 2 is a configuration in which an oblique incident optical system in which a collecting direction is set in a direction of -25 to 200908815. In general, an EUV concentrating mirror in which a plurality of thin concave mirrors are arranged in a nested structure with high precision is used to constitute such an oblique incident optical system. The EU.V condensing mirror of such a configuration supports the plurality of thin concave mirrors described above by a support substantially conforming to the optical axis and a support extending radially from the support. In Fig. 3, the first laser beam 23 is introduced from the direction of the optical axis defined by the condensing mirror 2, and is irradiated to the high-temperature plasma material 2 1 . Therefore, if the irradiation position of the first laser beam 23 and the high-temperature plasma material position 21 are shifted, the first laser beam 23 is irradiated onto the EUV condensing mirror 2, as the case may be. The EUV condenser 2 has the possibility of damage. As described above, when the first laser beam 23 is prevented from reaching the EUV condensing lens 2 during the erroneous irradiation of the first laser beam 23, as shown in the fourth (a) and (b), The direction in which the first laser beam 23 is directed may be adjusted so as not to reach the direction of the EUV condensing mirror 2. However, as described above, the high-temperature plasma raw material vaporized by the irradiation of the first laser beam 2 3 is taken as the normal direction of the surface of the high-temperature plasma raw material incident on the first laser beam 23 Center expansion. Therefore, when the first laser beam 23 is irradiated on the side of the discharge region facing the surface of the high-temperature plasma 21, the vaporized high-temperature plasma material 2 1 is expanded toward the discharge region. Here, the irradiation of the first laser beam 2 3 is supplied to the vaporized high-temperature electric prize material 2 1 ′ in the discharge field to 'not contribute to a part of the high-temperature plasma former by discharge' or As a result of the formation of the plasma, a part of the group of the atomic gas which is decomposed is formed as a chip and is deposited as a low temperature portion in the EUV light source -26-200908815 device. For example, when the high-temperature plasma raw material is Sn, it contributes to a part of the high-temperature electricity generator, or a part of a so-called metal group of Sn, Snx which forms a decomposition of the raw gas as a result of plasma formation, and is used as a debris EUV. A tin mirror is produced by contacting the low temperature portion of the light source device. Here, as shown in FIG. 4(b), when the high-temperature plasma raw material 21 is supplied to the space side of the condensing mirror 2 that does not face the pair of electrodes 111, 1 2 by the raw material supply means, the first laser beam is emitted. The bundle 23 is such that the vaporized high-temperature plasma raw material 21' is supplied to the discharge region 'from the EUV mirror 2 side to the high-temperature electric paddle material 21. At this time, the plasma raw material vaporized by the irradiation of the first laser beam 23 is expanded toward the discharge region and the EUV condensing mirror 2, that is, by the first laser for the high-temperature plasma raw material 2 1 The beam 23 and the discharge occurring between the electrodes 11 '12' are debris for the EUV concentrating mirror. When debris accumulates in the EUV concentrating mirror 2, the EUV poly 2 decreases the reflectance at 1 3.5 nm, which degrades the EUV light source device performance. Thus, as shown in Fig. 3 and Fig. 4(a), the high temperature electric material is supplied to the space between the pair of electrodes 1,1, 2 and the E U V condensing mirror 2 in the vicinity of the discharge region. For the high-temperature plasma raw material 2 1 ' thus supplied, the first bright beam 2 3 is irradiated on the side facing the surface of the high-temperature plasma raw material as described above, and then the vaporized high-temperature plasma raw material 2 1 'It expands in the direction of discharge, but does not extend in the direction of the EU.V condenser 2. The slurry is shaped like a sub-shape, so that the concentration of light after EUV is high. The field of the discharge of the 2 illuminating mirror is -27-200908815, and the high-temperature electric paddle material 2 1 is supplied and the irradiation position of the first laser beam 23 is set as described above. The case where the debris is suppressed by the EUV condensing mirror 2 is suppressed. Here, a case is considered in which only a pair of electrodes are separated by a predetermined distance, as shown in Fig. 5 as a columnar shape. Fig. 5(a) is a plan view, and Fig. 5(b) is a front view. That is, Fig. 5(b) is a diagram showing the fifth (a) view from the direction of the arrow. At this time, even if the high-temperature plasma raw material 21 is supplied to the space on the plane perpendicular to the optical axis, and the vicinity of the discharge region, the first laser beam 23 is irradiated with the high-temperature plasma raw material from the direction perpendicular to the optical axis. 2 1. The high-temperature plasma raw material 2 1 ' after gasification does not expand in the direction of the EUV condenser 2. Therefore, the irradiation of the first laser beam 2 3 of the high-temperature plasma raw material 21 and the debris generated by the discharge occurring between the electrodes 1 Γ, 1 2' are hardly applied to the EUV condensing mirror 2 get on. Further, of course, even when a pair of electrodes separated by a predetermined distance are columnar, as shown in FIG. 3 and FIG. 4( a ), the high-temperature plasma raw material is supplied to the pair of electrodes by the raw material supply means. The space between the EU V concentrator and the space near the discharge area is also acceptable. (3) The energy of the laser beam for the raw material is irradiated from the first laser beam (the laser beam for the raw material) 23 at the timing of the raw material until at least a part of the vaporized raw material reaches the discharge region. The time Δtg ' is obtained by the distance between the radiation field and the material irradiated by the first laser beam 23, and the speed at which the vaporized material is expanded. -28- 200908815 Here, the distance between the discharge field and the raw material irradiated by the first laser beam is dependent on the discharge area of the first laser beam 23 and the position of the raw material 21 and the raw material. The irradiation direction of the first laser beam 23 of 21 is, on the one hand, the high-temperature plasma material 2 Γ 'which is vaporized by the irradiation of the first laser beam 23 as described above is the first laser beam The normal direction of the surface of the incident electric power paddle material is the center, and the "speed determined as described above" is expanded at a predetermined speed depending on the irradiation energy of the first laser beam 2 3 irradiated on the material 2 1 . As a result, the time from the timing at which the first laser beam 2 3 is irradiated to the raw material to the time when the spatial density distribution is a portion of the vaporized raw material having a predetermined distribution reaching the discharge region Δ tg ' depends on the discharge region and the raw material 2 The position 'kf of 1' is in the irradiation direction of the first laser beam 2 3 of the material 2 1 , and the irradiation energy of the first laser beam 2 3 is limited to a predetermined time by appropriately setting these parameters. Further, by appropriately setting these parameters, the spatial density distribution of the vaporized high-temperature plasma raw material can be set to a predetermined distribution. When the first laser beam (the laser beam for raw material) 23 is irradiated onto the raw material and vaporized, the irradiation conditions and the discharge current of the first laser beam are appropriately selected. The above long pulse can be performed. That is, in order to maintain the compression state of the plasma according to the self-beam effect, it is not necessary to flow a large current in the discharge field, and sufficient EUV radiation conditions as described above are maintained (that is, the ion density is 1〇i7~1〇2〇cm· 3, high-temperature plasma with an electron temperature of about 20 to 3 OeV, and long pulse of EUV radiation can be realized. -29-200908815 The high-temperature plasma generation of the DPP method of the present invention will be described using FIG. In addition, the vertical axis and the horizontal axis of Fig. 6 are high-temperature plasma raw materials which are disposed in a solid or liquid outside the discharge region as in the case of Fig. 3 (in the sixth drawing, a fuel solid is described as an example). Irradiation energy beam. As an energy beam, for example, a laser beam is used. Hereinafter, a laser beam will be described as an example. A solid or liquid high-temperature plasma material that is irradiated with a laser beam is heated and vaporized to reach a discharge channel formed in advance in the discharge field. Here, the vaporized high-temperature electric paddle material is a low-temperature plasma gas having an ion density of about 1 〇 17 to 1 ) 2 t) cm_3 in the plasma when it reaches the discharge field, and an electron temperature of about 1 eV or less. The way, the irradiation energy of the laser beam is set appropriately. That is, by irradiating the laser beam to the high-temperature plasma material, the ion density in the electric paddle is sufficient EUV radiation condition, but the electron temperature is low temperature, forming a low-temperature plasma gas [path of Fig. 6 (I )]. The low temperature plasma is supplied to a discharge path previously formed in a discharge region between electrodes, and the low temperature plasma is heated by a discharge current. Here, regarding the ion density of the low-temperature plasma gas, the EUV radiation condition is sufficient, and thus the compression effect of the self-beam effect of the conventional D P P method is small. That is, the current flowing between the electrodes mainly contributes only to the heating of the low temperature plasma. By heating, the electron temperature of the plasma reaches 20 to 30 eV, and from the high-temperature plasma that becomes the EUV radiation condition, the EUV is emitted [path of the 6th-30-200908815 diagram (I丨)^ here, by The above-mentioned low-temperature plasma gas 'continuously supplied to the discharge channel which is opened/formed between the electrodes in advance, becomes a long pulse which can realize EUV radiation. Hereinafter, the long pulse method will be described using Figs. 7 and 8. Further, Fig. 7 is a view showing a multi-self-bundling method, and Fig. 8 is a view showing a non-self-bundling method. Fig. 7 is a view showing a plasma current, a low-temperature plasma radius, and EUV radiation when the multi-self-bundling method is described. Power is supplied between the electrodes, and at the timing of t = to (by applying a trigger), vacuum discharge is started to cause the current to start flowing, forming an effective electric path (discharge current path) (Fig. 7 (a)). At the timing tp at which the current I reaches the critical threshold pIp described below, the cross-sectional dimension of the discharge channel is thinned by the influence of the self-magnetic field of the current. On the one hand, at the timing tp described above, the high-temperature plasma raw material (i.e., the low-temperature plasma gas corresponding to the ion density of the EUV radiation condition and the low electron temperature) of the laser beam that is irradiated and vaporized is selectively reached. A fine discharge channel to the discharge field. Here, the critical value 电流ip of the current is set as Pb according to the compression pressure of the self-magnetic field of the current, and the pressure of the plasma is set as pP.
Pb» Pp (104) 。亦即,藉由自我磁場,作成可充分壓縮低溫電漿氣 體的電流値。 又,上述臨界値Ip是也具有可將低溫電槳氣體(電 -31 - 200908815 槳內的離子密度爲l〇17〜l〇2()cm_3左右,而電子溫度爲leV 以下左右)的電子溫度加熱成20〜3 OeV或是其以上的能量 的電流値。 如上述地,選擇性地供應於上述的細放電通道的低溫 電漿,是藉由將雷射射束照射於固體或是液體狀的高溫電 漿原料所生成。雷射射束的照射條件,是依據從配置在放 電領域外的高溫電漿原料一直到放電領域爲止的距離等適 當地被設定。照射能量是將固體或液體狀的高溫電漿原料 予以氣化,惟不會多餘地上昇電子溫度的程度的能量(※ 如第6圖所示地,依雷射照射的電子溫度是稍上昇),例 如 105W/cm2〜1016W/cm2 的範圍。 藉由將此種雷射射束照射在固體或液體狀的高溫電漿 原料,可將相當於EUV放射條件的離子密度而電子溫度 低的電子溫度低的高溫電漿原料(低電漿氣體),在1 〇μ5 左右的期間連續地供應於電極間。 一般,習知的DPP方式,LAGDPP方式的放電持續時 間,是在2μ3左右。亦即,與習知的放電持續時間相比較 ,則上述的低溫電漿氣體的供應是可看做穩定性連續供應 〇 低溫電漿選擇性地到達至上述的細放電通道的方式, 適當調整雷射射束的照射條件,高溫電漿原料的配置等的 條件。藉由此種調整,構向性良好的被氣化的高溫電槳原 料(低溫電漿氣體)流動,設定成該流動集中於細放電通 道附近而被供給。藉由如此地構成,低溫電漿氣體選擇性 -32- 200908815 地連續供應於細放電通道。 又,若將固體或液體的高溫電漿原料配置 內,則依放電的能量直接作用於高溫電漿原 刻地變更氣化高溫電漿原料的條件。所以,無 EUV放射條件的離子密度且電子溫度低的低溫 擇性地連續供應於細放電通道。 被供應於細放電通道的低溫電漿氣體,是 以上數値的電流的自束效應或依自我磁場的閉 熱而成爲高溫電漿,並從該高溫電槳被放射著 在此,EUV的放射是經由第6圖的(II ) 現之故,因而依自束效應的壓縮作用是較小而 的閉合效果與依焦耳加熱的加熱工程所佔的比 即,並不是如習知的DPP方式,LAGDPP方式 而是以較小電流流在放電領域也可成爲EUV 如習知地,即使未實施放電電流的高速短脈衝 可有效率地將能量輸入(亦即,加熱)在電獎 爲可將放電電流脈衝與習知相比較設定成較長 又,被壓縮的上述高溫電漿,是在剛進行 後沿著放電通道軸方向的電漿密度斜度被擠出 電通道的軸方向脫離。同時地放電通道是朝徑 結果,使得放電通道內部的電漿密度與電子溫 降。習知在該時機,則終了 EUV放射。 然而,如上述地,在放電通道的周圍存在 氣體的穩定流之故,因而在放電通道內的電獎 於放電領域 ,而時時刻 法將相當於 .電漿氣體選 依臨界値I p 合效果被加 EUV。 的路徑被實 依自我磁場 率變大。亦 的大電流, 放射。又, 化,也成爲 。因此,成 〇 最大壓縮之 ,主要朝放 方向擴展, 度急速地下 著低溫電漿 密度下降的 -33- 200908815 空間,無時間差地供應著低溫電漿。因此,在放電通道的 直徑尙未太擴展期間藉由自束效應或自我磁場的閉合效應 ,使得放電通道再變細,而低溫電漿氣體被加熱,以如上 述的機構性繼續進行EUV放射〔第7 ( b ) ,( C )圖〕。 依此種自束效應或自我磁場的閉合效應的重複,是放 電電流繼續的期間仍持續。 又,如上述地,在本發明中並不需要電流的高速短脈 衝化之故,因而可將放電電流脈衝與習知相比較設定較長 。亦即,連續地可長期維持自束效應或依自我磁場的閉合 效應的重複之故,因而可實現EUV放射的長脈衝化。又 ,以下,將利用連續性自束效應的本發明稱爲多自束方式 〇 利用習知的自束效應的D P P方式,是低離子密度的高 溫電漿原料氣體被供應於放電領域。(第6圖的自束初期 狀態)。低密度氣體是一樣地充滿於放電容器(放電領域 )全體。在低密度氣體氣氛依藉由放電所生成的初期電漿 的放電通道是在初期狀態下,粗到放電容器的直徑左右之 故,因而利用自束效應來將放電通道變細,而爲了將初期 電漿作成高溫電漿,成爲需要大功率的電流脈衝。又,爲 了提昇依放電對於電漿的能量輸入效率,必須進行放電電 流的高速短脈衝化。因此,E U V放射是以丨次的自束效應 就終了,而EUV放射的脈衝寬度是成爲大約200ns左右 。(第3 8圖的路徑2 )。 又,在習知的DPP方式中’終了第1次的自束,在放 -34- 200908815 電通道內部的電漿密度下降的領域,會侵入 的低密度氣體(高溫電漿原料)之故,因而 粗,而回到第1次的自束效應的初期狀態時 直徑。因此,若實施多自束,則與第1次的 成爲需要大電流。實際上,如上述地,放電 脈衝之故,因而在第1次的自束終了後的多 無法實施第2次的自束。 在LAGDPP方式中,即使使用自束效展 圖的路徑3,經由路徑2而發生EUV放射。 於高溫電漿原料的雷射照射,低密度的高溫 供應於放電領域。 以下,與DDP方式時同樣,在低密度 由放電來生成初期電槳,而爲了藉由自束效 作成高溫電漿,成爲需要大功率的電流脈衝 現放電電流的高速短脈衝化。因此,EUV放 束效應終了。 又,如專利文獻5所述地,在LAGDPP 雷射射束的照射的高溫電漿原料氣體放出後 ,因而來被加熱而從放電領域脫離的高溫電 大,沒有效率。 亦即,在習知的DPP方式,LAGDPP方 現EUV放射的長脈衝,如專利文獻6或專 地,分離電漿的加熱及壓縮工程與壓縮維持 制,把電漿到達至自束狀態之後的電漿電流 有放電容器內 放電通道是變 的放電通路的 自束時同樣, 電流是筒速短 餘時間,成爲 I,經過第3 8 亦即,藉由對 電漿原料氣體 氣體氣氛下藉 應將初期電漿 ,又,必須實 射是以1次自 方式中,利用 發生放電之故 漿原料氣體變 式中,爲了實 利文獻7所述 工程而予以控 値,比電漿到 -35- 200908815 達至自束狀態之前的電槳電流値 將能量供應於放電空間的方法。 可是,將依電流的自我磁場 漿壓力作爲pP時,若將電流的薛 Pb ^ Pp (105) 的値Ip2,即使作成利用自 漿氣體(維持在使得低溫電漿氣 的程度)的電流値時,也可實現 又’上述臨界値Ιρ2,是也 漿內的離子密度爲1017〜102()Cm 以下左右)的電子溫度可加熱至 的電流値。 第8圖是表不非自束方式時 徑,EUV放射的圖式,以下,使 式。 在電極間供應著電力,而在 得電流開始流動〔第8 ( a )圖〕 Ip2的時機tp中,放電通道的斷 磁場的影響而變細。又,比較使 臨界値IP與上述臨界値I p 2,貝1. 放電通道的斷面尺寸,是比使用 一方面,在上述的時機tp 同樣,相當於EUV放射條件的 低溫電漿氣體作成選擇性地到達 還大的方式,不得不採用 的壓縮壓力作爲P B,將電 ;界値設定成爲 我磁場較弱地壓縮低溫電 體膨脹而未減少離子密度 EUV放射的長脈衝化。 具有將低溫電漿氣體(電 ^左右,電子溫度爲leV 20〜30eV或其以上的能量 的電漿電流,低溫電漿半 用第8圖來說明非自束方 t = to的時機開始放電而使 。在電流I到達至臨界値 面尺寸是受到電流的自我 用多自束效應時的電流的 成爲Ip 1 >Ip2之故,因而 多自束效應時還大。 中,與使用多自束效應時 離子密度而電子溫度低的 流動放電領域的細放電通 -36- 200908815 道。又,與上述同樣,低溫電漿氣體是構成選擇性地連續 供應於細放電通道。 被供應於細放電通道的低溫電漿氣體,是藉由臨界値 Ip2以上値的電流,幾乎不會被壓縮,在該低溫電漿氣體 膨脹而離子密度被維持在不會減少的程度的狀態下被加熱 成爲高溫電漿,而從該高溫電漿被放射EUV。亦即,低溫 電漿的離子密度是當初就滿足EUV放射條件之故,因而 藉由一面維持離子濃度一面進行加熱,被實現EUV放射 〔第6圖的(II )路徑〕。 因此,並不是如習知的DPP方式,LAGDDP方式地大 電流,而將較小電流流在放電領域也成爲可進行EUV放 射。又,如習知地,並未實施放電電流的高速矩脈衝化, 也成爲可將能量有效率地輸入(亦即,加熱)至電漿。因 此,成爲可將放電電流脈衝與習知相比較設定較長。 在此,在放電通道的周圍存在著低溫電漿氣體的穩定 流之故,因而在放電通道,穩定地供應著具有所定離子密 度的低溫電漿氣體。因此,放電電流繼續的期間,在放電 通道由低溫電漿氣體的加熱被維持,而EUV放射被繼續 。〔第 8(b) (c)圖〕。 在該情形,也不需要電流的高速矩脈衝之故,因而成 爲可將放電電流脈衝與習知相比較設定較長。亦即可連續 地長期間維持低溫電漿氣體的加熱及高溫電漿的生成之故 ,因而可實現EUV放射的長脈衝化。 在本方式中,將電流的臨界値Ip2作成藉由自我磁場 -37- 200908815 較弱地壓縮低溫電漿氣體(被維持在低溫電槳氣體膨脹而 離子密度減少的程度)的電流値之故,因而低溫電漿是被 加熱成外觀上未收縮,而成爲高溫電漿。因此,將本方式 在以下稱爲非自束方式。 在此’是否爲上述的多自束方式或非自束方式,爲若 驅動電流値相同,則藉由放電通道的大小所決定,若選擇 放電電極的形狀,所照射的雷射光的射束徑等,作成放電 通道變細則成爲多自束方式,而作成放電通道變粗則成爲 非自束方式。 又,在非自束方式中,放電通道的直徑比多自束方式 還大之故,因而高溫電漿的尺寸也變成比多自束方式還大 。亦即,作爲EUV放射源的尺寸變成比多自束方式還大 之故,因而將本發明適用於曝光用EUV光源裝置時,採 用多自束方式比非自束方式者,可將EUV放射源的尺寸 作成更小之故,因而較佳。 以多自束方式進行EUV光的取出時,則在同等的能 量變換效率以一次自束取出同等的EUV輸出時粗比較, 一次自束的峰値功率輸入變小。因此,成爲可抑制對電極 的峰値功率輸入,可減低依電極的濺鍍的碎屑發生。又, 有助於一次自束的EUV發光的離子數是較少。因此可減 小光線尺寸之故,因而在曝光光學系的設計上成爲有利。 如上述地,在本發明中作成以下而實現EUV放射的 長脈衝化。 (i)事先在放電領域生成細放電通道。 -38- 200908815 (ii )在放電領域外,將能量射束照射在固體或液體 的高溫電漿原料而使之氣化,以形成相當於EUV放射條 件的離子密度而電子溫度低的低溫電漿氣體(第6圖的燃 料蒸氣:離子密度爲1017~102()cm·3左右,而電子溫度爲 leV以下左右)。 (iii )之後,在放電電流値到達至所定臨界値(Ip或 IP2 )的時機,上述低溫電漿氣體到達至上述細放電通道 的方式,對於細放電通道,選擇性地供應低溫電漿氣體的 穩定流。結果,在低溫電漿作用著放電而使電子溫度上昇 ’通過第6圖的路徑1 1,形成有滿足EUV放射條件的高 溫電漿而發生EUV放射。 (iv )在此,對於事先形成的放電通道供應低溫電漿 氣體之故,因而放電電流脈衝是不需要大電流,高速短脈 衝’而將電流脈衝作成比習知的電流脈衝在上昇還慢的長 脈衝也可以。EUV放射是細放電通道在某種程度持續的期 間,仍繼續。因此,放電電流脈衝比習知的DPP方式, LAGDPP方式變長的方式,構成放電電路而將放電電流脈 衝作成長脈衝化,藉此成爲可將細放電通道的持續時間與 習知相比較作成較長,結果可實現EUV放射的長脈衝化 〇 (V )又,作爲多自束方式,將電流的臨界値設定成 爲Ip時’在放電電流脈衝仍繼續的時間內,細放電通道 的直徑是保持在脈動者的相對性細的狀態下,重複進行低 溫電漿的自束,而發生EUV放射。 -39- 200908815 又,作爲非自束方式,將電流的臨界値設定成Ip2時 ,則在放電電流脈衝繼續的時間內,細放電通道的直徑是 保持在比多自束方式時還粗者的相對性細的狀態下,持續 低溫電漿的加熱,維持著EUV放射所必須的電漿溫度及 密度,而發生EUV放射。 又,在非自束方式中,如上述地,放電通道的直徑比 多自束方式還大之故,因而高溫電漿的尺寸也比多自束方 —P- -L- 速大。 依據以上,在本發明,作成以下來解決上述課題。 (1 ) 一種極端紫外光光源裝置,具有:將液體或固 體原料予以供應的原料供應手段;及將第1能量射束照射 在上述原料而把該原料予以氣化的第1能量射束照射手段 ,及將被氣化的上述原料藉由放電在上述容器內使之加熱 激勵俾發生高溫電漿所用的僅隔所定距離的一對電極,及 將脈衝電力供應於電極的脈衝電力供應手段;及將從在依 上述一對電極的放電的放電領域內所生成的上述高溫電漿 所放射的極端紫外光予以聚光的聚光光學手段,及取出上 述被聚光的極端紫外光的極端紫外光取出部,其特徵爲: 設有藉由將第2能量射束照射在施加有電力的電極間,在 上述放電領域內起動放電,且將放電路徑劃定在放電領域 的所定位置的第2能量射束照射手段。 上述第1能量射束照射手段,是除了上述放電領域之 外的空間,對於上述被氣化的原料被供應於可到達放電領 域的空間內的原料,照射第1能量射束。 -40 - 200908815 (2 ) —種極端紫外光光源裝置,具有:將液體或固 體原料供應於該容器內的原料供應手段;及將第1能量射 束照射在上述原料而把該原料予以氣化的第1能量射束照 射手段’及將被氣化的上述原料藉由放電在上述容器內使 之加熱激勵俾發生高溫電漿所用的僅隔所定距離的一對電 極’及將1 μ3以上的脈衝電力供應於電極的脈衝電力供應 手段;及將從在依上述一對電極的放電的放電領域內所生 成的上述高溫電漿所放射的極端紫外光予以聚光的聚光光 學手段’及取出上述被聚光的極端紫外光的極端紫外光取 出部’其特徵爲:設有藉由將第2能量射束照射在施加有 電力的電極間’在上述放電領域內起動放電,且將放電路 徑劃定在放電領域的所定位置的第2能量射束照射手段。 上述第1能量射束手段,是在上述放電路徑外的空間 ’對於被配置在被氣化的原料可到達放電路徑的空間內的 原料’照射第1能量射束,而放電路徑被劃定在上述電極 間之後’將離子密度大約相等於極端紫外光放射條件的離 子密度的原料氣體供應於上述放電路徑。 (3 )在上述(丨),(2 )中,第1能量射束照射手 段與第2能量射束照射手段,是空間密度分布爲所定分布 的被氣化的原料的至少一部分在到達放電領域的時機,把 在放電領域所發生的放電的放電電流作成所定臨界値以上 的方式’各該動作時機被設定。 (4 )在上述(丨)(2 ) ( 3 )中,藉由原料供應手段 的原料供應,是將原料作成液滴狀而藉由朝重力方向滴下 -41 - 200908815 所進行。 (5) 在上述(1) (2) (3)中,藉由原料供應手段 的原料供應,是將上述原料作成線狀原料,連續地移動該 線狀原料所進行。 (6) 在上述(1) (2) (3)中原料供應手段是具備 原料供應圓盤,藉由原料供應手段的原料供應,是將上述 原料作成液體原料’將該液體原料供應於上述原料供應圓 盤’旋轉供應有上述液體原料的原料供應圓盤而將上述原 料供應圓盤的液體原料的供應部移動至能量射束的照射位 置所進行。 (7) 在上述(1) (2) (3)中,上述原料供應手段 是具備毛細管’藉由原料供應手段的原料供應,是將上述 原料作成液體原料,將該液體原料經由上述毛細管供應於 能量射束的照射位置所進行。 (8 )在上述(1 ) ( 2 ) ( 3 )中在原料的能量射束照 射位置設置管狀噴嘴,藉由能量射束的照射被氣化的原料 的至少一部分是藉由上述管狀噴嘴所噴出。 (9) 在上述(8)中,在管狀噴嘴的內部一部分設置 狹窄部。 (10) 在上述(1) (2) (3) (4) (5) (6) ( 7 )(8 )中,又設置對於放電領域,與在上述一對電極間 所發生的放電方向大致平行地施加磁場的磁場施加手段。 (11) 在上述(1) (2) (3) ( 4 ) (5) (6) (7 )(8) (9) (1〇)中,上述一對電極是圓盤狀電極,旋 -42- 200908815 轉驅動成電極表面的放電發生位置會變化。 (12) 在上述(11)中,上述圓盤狀的一對電極’是 配置成兩電極的周緣部的邊緣部分僅隔著所定距離互相地 相對。 (13) 在上述(1) (2) (3) (4) (5) (6) (7 )(8 ) ( 9 ) ( 1 〇 ) ( 1 1 ) ( 1 2 )中,作爲能量射束使用 雷射射束。 (1 4 ) 一種極端紫外光發生方法,是在將供應於在內 部包含一對電極的容器內的極端紫外光予以放射所用的液 體或固體的原料照射第1能量射束使之氣化’並藉@ i述 一對電極的放電來加熱激勵被氣化的上述原料’生成高溫 電漿而發生極端紫外光的極端紫外光發生方法’其特徵爲 :上述第1能量射束,是除了上述放電領域之外的空間’ 對於上述被氣化的原料被供應於可到達放電領域的@間內 的原料進行照射,藉由被照射於放電領域的第2能S射束 ,在上述一對電極所放電的放電領域內被起動放電’且在 放電領域的所定位置劃定有放電路徑。 (1 5 ) —種極端紫外光發生方法,是在將供應於在內 部包含一對電極的容器內的極端紫外光予以放射所用的 '液 體或固體的原料照射第1能量射束使之氣化,並藉由上述 一對電極的放電來加熱激勵被氣化的上述原料,生成高溫 電漿而發生極端紫外光的極端紫外光發生方法,其特徵爲 :上述第1能量射束,是除了上述放電領域之外的空間’ 對於上述被氣化的原料被供應於可到達放電領域的空間內 -43- 200908815 的原料進行照射,藉由被照射於放電領域的第2能量射束 ,在上述一對電極所放電的放電領域內被起動放電,且在 放電領域的所定位置劃定有放電路徑,放電路徑被劃定在 上述電極間之後,藉由上述第1能量射束,將離子密度大 約相等於極端紫外光放射條件的離子密度的原料氣體供應 於上述放電路徑,藉由放電,將上述原料氣體加熱至滿足 極端紫外光放射條件的溫度,而連續地發生200ns以上的 極端紫外光。 (1 6 )在上述(1 5 )中,空間密度分布爲所定分布的 被氣化的原料的至少一部分在到達放電領域的時機,把在 放電領域所發生的放電的放電電流作成所定臨界値以上的 方式’分別設定有第1能量射束與第2能量射束的照射時 機。 (1 7 )在上述(1 6 )中,取得放電開始時機的時間資 料與放電電流到達所定臨界値的時機的時間資料,依據兩 時間資料,進行修正第1能量射束與第2能量射束的照射 時機。 (1 8 )在上述(1 6 )(丨7 )中,在照射時機被設定的 第1能量射束與第2能量射束的照射之前,將第i能量射 束照射1次以上在上述原料。 在本發明中’可得到以下的效果。 (1)藉由適當設定第1能量射束的強度,照射方向 ,成爲可將在放電領域被氣化的高溫電漿原料的空間密度 分布設定在所定分布。 -44- 200908815 又,藉由將第2能量射束照射在放電領域的所定位置 ,成爲可劃定放電通道的位置’而可提昇EUV放射的發 生點的位置穩定性。又’藉由控制第2能量射束的照射時 機成爲可控制開始放電的時機。 (2 )藉由第1能量射束的照射,空間密度分布爲所 定分布的被氣化的原料的至少一部分到達至放電領域,且 在放電領域所發生的放電的放電電流成爲所定臨界値以上 的時機,使得第2能量射束被照射的方式,藉由設定第1 能量射束與第2能量射束的照射時機,而有效率的EUV 放射成爲可能。 (3 )對於放電領域,藉由設置與在上述一對電極間 所發生的放電方向大致平行地施加磁場的磁場施加手段, 可減少放射EUV的高溫電漿的尺寸,而增加EUV的放射 時間成爲可能。 (4)將一對電極作成圓盤狀電極,藉由旋轉驅動成 爲能變更電極表面的放電發生位置,來滅少電極的磨耗速 度,使得電極的長壽命化成爲可能。 (5 )取得放電開始時機的時間資料與放電電流到達 至所定臨界値的時機的時間資料,依據兩時間資料,藉由 校正第1能量射束與第2能量射束的照射時機,可確實地 實現效率優異的EUV放射。 (6 )在設定有照射時機的第1能量射束與第2能量 射束的照射之前,藉由將第1能量射束照射於上述原料1 次以上,在放電電極間容易發生放電,而在所期望的時機 -45- 200908815 可確實地發生放電。 (7 )在放電領域事先生成細放電通道,從放電 外,對於該細放電通道選擇性地供應相當於EUV放 件的離子密度而電子溫度低的低溫電漿氣體的穩定流 將放電作用於低溫電漿,以發生EUV放射之故,因 電電流是不需要如習知的DPP方式,LAGDPP方式的 流,即使在放電領域流著較小電流,也成爲可進行 放射。 又,如習知地,未實施放電電流的高速短脈衝化 成爲可將能量有效率地輸入至電漿。因此,成爲可將 電流脈衝與習知相比較設定較長。 又,放電電流脈衝比習知的DPP方式,LAGDPP 還長的方式構成放電電路而藉由將放電電流脈衝作成 衝化,成爲可將細放電通道的持續時間與習知相比較 較長,結果,可實現EUV放射的長脈衝化。 例如,將放電通道的持續時間至少作成1 以上 則可將放電通道所繼續的時間確實地作成比200ns還 亦即,若將放電通道的繼續設定在1 以上,則成爲 EUV放射的繼續時間,比習知的EUV放射的繼續時 200ns )確實地作成還久。 (8 )在長脈衝化中,放電電流不需要如習知的 方式,LAGDPP方式的大電流,又不必實施放電電流 速短脈衝化。因此,成爲將給予電極的熱負荷與習知 較作成較小,而成爲可抑制碎屑的發生。 領域 射條 ,而 而放 大電 EUV ,也 放電 方式 長脈 作成 時, 久。 可將 間( DPP 的高 相比 -46- 200908815 (9 )如習知的長脈衝化技術地,能維持高溫電漿的 自束狀態的方式,不必控制電漿電流波形之故,因而不必 將大電流流在放電空間。又,爲了維持自束效應,不必變 更電漿電流的波形之後,因而不需要高精度的同步控制或 電流控制。 (1 〇 )將放電路徑固定用能量射束照射在放電路徑( 放電通道),藉由該能量射束來固定放射路徑,藉由此, 可提昇EUV放射的發生點的位置穩定性。 【實施方式】 1 .實施例 在第9圖及第10圖表示本發明的實施例的極端紫外 光(EUV )光源裝置的構成(斷面圖)。第9圖是表示本 實施例的EUV光源裝置的前視圖,EUV放射是從同圖左 側被取出。第10圖是表示本實施例的EUV光源裝置的俯 視圖。 表示於第9圖及第10圖的EUV光光源裝置,是具有 放電容器的腔1。腔1是經由具有開口的隔間壁1 c被分割 成大的兩個空間。在一方的空間配置有放電部。放電部是 加熱包含EUV放射種籽的高溫電漿原料而予以激勵的加 熱激勵手段。放電部是藉由一對電極1 1,1 2等所構成。 在另一方的空間,配置有:聚光高溫電漿原料被加熱 激勵所生成的高溫電漿所放出的EUV光,而由設於腔! 的EUV取出部7引導至省略圖示的曝光裝置的照射光學 -47- 200908815 系的EUV聚光鏡2,及抑制利用放電的電漿生成的結果所 生成的碎屑朝EUV光的聚光部移動所用的碎屑收集器。 在本實施例中,如第9圖及第10圖所示地,碎屑收集器 是由氣幕13b及輪型收集器3所構成。 以下’將配置有放電部的空間稱爲放電空間1 a,而將 配置有E U V聚光鏡的空間稱爲聚光空間i b。 在放電空間1 a連結有真空排氣裝置4,在聚光空間 lb連結有真空排氣裝置5。又,輪型收集器3是例如藉由 輪型收集器保持用隔間壁3 a保持在腔1的聚光空間1 b內 。亦即,在表示於第9圖,第10圖的例子,聚光空間lb 是藉由輪型收集器保持用隔間壁3 a,又被分割成兩個空間 〇 又,在第9圖,第10圖中,放電部被表示成比EUV 聚光部還大,惟此乃爲了容易瞭解,實際的大小關係並不 是如第9圖,第10圖所示。實際上,EUV聚光部爲比放 電部還有。亦即,聚光空間1 b比放電空間1 a還大。 以下,針對於本實施例的EUV光源裝置的各部及其 動作加以說明。 (1 )放電部 放電部是由金屬製圓盤狀構件的第1放電電極11,及 同樣金屬製圓盤狀構件的第2放電電極12所構成。第1 及第2放電電極1 1,1 2是例如鎢、鉬、钽等的高融點金 屬所構成,僅隔著所定距離配置成互相相對的狀態。在此 -48- 200908815 ,兩個電極11,12中的一方爲接地側電極,而另一方爲 高電壓側電極。 兩電極11,12的表面是配置在同一平面上也可以, 惟如第1〇圖所示地,容易發生放電的方式,在施加電力 時電場所集中的周緣部的邊緣部分,僅隔著所定距離配置 成互相相對的情形較佳。亦即,配置各電極成爲包含各電 極表面的假想平面交叉的情形較佳。又,上述所定距離是 兩電極的周緣部的邊緣部分間距離爲最短部分的距離。 如下述地,當脈衝電力利用脈衝電力供應手段施加於 兩電極11,12,則在上述周緣部的邊緣部分發生放電。一 般,在兩電極1 1,1 2的周緣部的邊緣部分間距離最短部 分會發生較多放電。 假設考慮將兩電極11,12的表面配置在同一平面上 的情形。這時候,上述所定距離是各電極的側面間的距離 成爲最短部分的距離。這時候,放電的發生位置是成爲接 觸圓盤狀電極的側面與垂直於該側面的假想平面時所形成 的假想接觸線上。放電是可發生在各電極的假想接觸線上 的任意位置。因此,將兩電極表面配置在同一平面上時, 有效電位置不穩定的可能性。 一方面,如第1 0圖所示地,若僅隔著所定距離互相 相對地配置著各電極1 1,1 2的周緣部的邊緣部分。則如 上述地,兩電極11,12的周緣部的邊緣部分間距離最短 部分發生較多放電之故,因而穩定放電位置。以下,將發 生兩電極間的放電的空間稱爲放電領域。 -49- 200908815 如上述地,各電極1 1,1 2的周緣部的邊緣部分配置 成僅隔所定距離互相相對的情形’當如第10圖所示地從 上方俯視,則以包含第1及第2放電電極的表面的假設平 面所交叉的位置作爲中心’兩電極是成爲放射狀地配置。 在第1 0圖中,放射狀地配置的兩電極的周緣部的邊緣部 分間距離最長部分,是以上述假設平面的交叉位置作爲中 心時,與下述的EUV聚光鏡設置成位於相反側。 在此,放射狀地配置的兩電極1 1,1 2的周緣部的邊 緣部分間距離最長部分,是以上述假設平面的交叉位置作 爲中心時,也可設置成位於與EUV聚光鏡2相同側。但 是該情形,會使放電領域與EUV聚光鏡2之距離變長’ 而該分量也會降低EUV聚光效率而不實際。 本實施例的混合方式的EUV光源裝置,是利用來自 將第1雷射射束(原料用雷射射束)的照射所氣化的高溫 電漿藉由放電的電流驅動所生成的高溫電槳的EUV放射 光者。高溫電漿原料的加熱激勵手段,是依發生在一對電 極1 1,1 2間的放電所致的大電流。因此,電極1 1,1 2是 受到隨伴著放電的很大的熱性負荷。又,高溫電漿是發生 在放電電極近旁之故,因而電極11,12是也受到來自該 電漿的熱性負荷。藉由此種熱性負荷,電極是慢慢地磨耗 而發生金屬碎屑。 EUV光源裝置是使用作爲曝光裝置的光源裝置時,則 藉由EUV聚光鏡2來聚光從高溫電漿所放出的EUV放射 ,而將該聚光的EUV放射放出至曝光裝置側。金屬碎屑 -50- 200908815 是對E U V聚光鏡2給予損傷’而劣化e u V聚光鏡2的 EUV光反射率。 又,電極Π,12是慢慢地磨耗,而會使電極形狀變 化。藉由此,在一對電極1 1,1 2間所發生的放電會慢慢 地成爲不穩定’而EUV光的發生也成爲不穩定。 將上述的混合方式的EUV光源裝置使用作爲量產型 的半導體曝光裝置的光源時,則抑制如上述的電極消耗, 而成爲需要儘量延長電極壽命。 爲了對應於此種要求,在表示於第9圖,第1 0圖的 EUV光源裝置中’將第1電極11,第2電極12的形狀作 爲圓盤狀’且至少在放電時構成能旋轉。亦即,藉由旋轉 第1及第2電極11,12,而在兩電極中,發生脈衝放電的 位置是每一脈衝地變化。因此,第1及第2電極1 1,12 所受到的熱性負荷變小’使得電極1 1,1 2的磨耗速度減 少,而電極的長壽命化成爲可能。以下,將第1電極1 i 也稱爲第1旋轉電極,而將第2電極12也稱爲第2旋轉 電極。 具體上’在圓盤上的第1旋轉電極11,第2旋轉電極 1 2的大約中心部。分別安裝有第1電動機22 a的旋轉軸 22e’第2電動機22b的旋轉軸22f。第1電動機22a,第 2電動機22b,藉由旋轉各個旋轉軸22e,22f,第1旋轉 電極11,第2旋轉電極12是進行旋轉。又,旋轉方向並 未特別加以規制。在此,旋轉軸2 2 e,2 2 f,是例如經由機 械封接22c,22d被導入至腔1內。機械封接22c,22d是 -51 - 200908815 維持腔1內的減壓氣氛下’容許旋轉軸的旋轉。 如第9圖所示地’第1旋轉電極1 1是其一部分被配 置成浸在收容導電性饋電用熔融金屬1 1 a的導電性第1容 器1 1 b中。同樣地’第2旋轉電極1 2是其一部分被配置 成浸在收容導電性饋電用熔融金屬1 2a的導電性第2容器 12b 中。 第1容器1 lb及第2容器12b,是經由可維持腔1內 的減壓氣氛的絕緣性電力導入部1 1 C,1 2C,與脈衝電力供 應手段的電力發生器8相連接。如上述地,第1,第2容 器lib,12b,及饋電用熔融金屬11a,12a是導電性,而 第1旋轉電極11的一部分及第2旋轉電極12的一部分, 是浸漬於上述饋電用熔融金屬11a,12a之故,因而藉由 將脈衝電力從脈衝電力發生器8施加於第1容器Ub及第 2容器12b間,而在第1旋轉電極11及第2旋轉電極12 間施加有脈衝電力。 又,作爲饋電用熔融金屬11a,12a,採用著放電時, 不會影響到EUV放射的金屬。又,饋電用熔融金屬na, 1 2a是也功能作爲各旋轉電極1 1,1 2的放電部位的冷卻手 段。又,省略圖示’在第1容器lib,第2容器12b,具 備有將熔融金屬維持在熔融狀態的溫度調節手段。 (2 )放電起動機構 在本實施例的EUV光源裝置中,設置將第2雷射射 束(起動用雷射射束)2 4照射在放電領域的所定地點之第 -52- 200908815 2雷射源24a及控制該第2雷射源24b的動作的第2雷 控制部2 4 b。 如上述地,配置成各旋轉電極1 1,1 2的周緣部的 緣部分僅隔所定距離互相地相對之故’因而在兩電極1 1 12的周緣部的邊緣部分間距離最短部分發生較多放電。 此,放電位置穩定,然而,若以放電所致的磨耗而發生 緣部分的變形,則會降低放電位置的穩定性。 在此,若將起動用雷射射束24聚光於放電領域的 定位置,則在雷射焦點近旁,藉由電子放出而會降低導 率。因此,放電通道位置,是被劃定在設定雷射焦點的 置。所以,可提昇EUV放射的發生點的位置穩定性。 作爲放出第2雷射射束(起動用雷射射束)24的第 電射源24a,例如可採用二氧化碳雷射源或 YAG雷射 YV04雷射、YLF雷射等的固體雷射源、ArF雷射、KrF 射、XeCl雷射等的準分子雷射源等。 又在本實施例中,作爲照射於放電領域的所定地點 能量射束、照射雷射射束,惟代替雷射射束,也可將電 射束照射在高溫電漿原料。 在第1 1圖表示針對於第2雷射射束(起動用雷射 束)24的聚光例。第11 ( a )圖是表示將第2雷射射束 對於放電領域的所定地點進點聚光的例子。作爲聚光光 系24c ’例如使用著凸透鏡24d。對於電極近旁的放電 域的所定地點,藉由點狀地聚光第2雷射射束24,使得 極間的絕緣擊穿被誘發。在此,在雷射焦點(聚光點) 射 邊 5 因 邊 所 電 位 2 雷 的 子 射 2 4 學 領 電 近 -53- 200908815 旁,導電率因電子放出而降低。因此放電通道的位置,是 被劃定在設定雷射的聚光點的位置。 亦即,藉由以雷射照射來固定絕緣擊穿的發生點,使 得放電通道的位置被固定在放電領域的局部性領域。所以 可提昇EUV放射的發生點的位置穩定性。尤其是,藉由 進行點聚光,成爲可將EUV放射的發生點變小。 第1 1 ( b )圖是表示將第2雷射射束2 4對於放電領域 的所定地點進行線聚光的例子。作爲聚光光學系24b,例 如使用著兩枚柱面透鏡24e,24f。如所眾知,柱面透鏡是 具有僅朝一軸方向聚光或擴散光的功能。表示於第11 (b )圖的2枚柱面透鏡24e,24f是都具有朝一軸方向聚光 第2雷射射束24的功能者。又,2枚柱面透鏡是配置成聚 光起動用雷射射束24的軸方向互相地正交的狀態。 對於電極近旁的放電領域的所定地點,藉由線狀地聚 光第2雷射射束24,使得電極間的絕緣擊穿被誘發。與點 聚光時同樣地,放電通道的位置是被劃定在聚光線上。 亦即,藉由以雷射照射來固定第2雷射射束24的線 聚光位置,使得放電通道的位置被固定在放電領域的局部 性領域。所以,可提高EUV放射的發生點的位置穩定性 (3 )脈衝電力發生器 脈衝電力供應手段的脈衝電力發生器8是經由電容器 與磁性開關所構成的磁性脈衝壓縮電路部,將脈寬短的脈 -54- 200908815 衝電力施加於負荷的第1容器1 1 b與第 ,第1旋轉電極11與第2旋轉電極12, 在第9圖,第10圖表示脈衝電力發 第9圖,第10圖的脈衝電力發生 飽和電抗器所構成的兩個磁性開關S R2 脈衝壓縮電路。藉由電容器C1,第1磁 器C2,第2磁性開關SR3來構成2段 〇 磁性開關SR1是IGBT等的半導體 關SW的交換損失的減低用者,也稱爲 固體開關S W是上述的交換手段,以下寸 將電路的構成與動作依照第9圖, 。首先,充電器CH的充電電壓被調整 使得主電容C0藉由充電器CH被充電< 的固體開關S W是成爲斷開。 當完成主電容器C0的充電,使得 導通時,則施加於固體開關SW兩端的 磁性開關S R 1的兩端。 當施加於磁性開關SR1的兩端的主 電壓V0的時間積分値達到以磁性開關 的限定値,則磁性開關SR1飽和而導通 電容器C0,磁性開關SR1,昇壓變壓器 體開關S W的迴路流著電流。同時地, 的2次側,電容器C1的迴路流著電流 2容器12b,亦即 之間。 ί生器的構成例。 器是具有:使用可 、SR3的2段磁性 性開關SR2,電容 磁性脈衝壓縮電路 交換元件的固體開 磁性加速器。又, il稱爲交換手段。 第1 〇圖說明如下 ,在所定値v i η, >這時候,IGBT等 固體開關SW成爲 電壓是主要施加於 電容器C0的充電 S R 1的特性所決定 磁性開關,而在主 T r 1的1次側,固 在昇壓變壓器Trl ,使得被儲存在主 -55- 200908815 電容器C0的電荷移行而被充電在電容器Cl。 之後’當電容器C 1的電壓V 1的時間積分値達到以磁 性開關SR2的特性所決定的限定値,則磁性開關SR2飽 和而導通磁性開關,而在電容器C 1,磁性開關SR2,電容 器C2的迴路流著電流,移行至儲存在電容器C1的電荷, 而被充電於電容器C2。 然後’當電容器C2的電壓V2的時間積分値達到以磁 性開關SR3的性所決定的臨界値,則磁性開關SR3飽和 而使得磁性開關導通,俾把高電壓脈衝施加於第1容器與 第2容器,亦即,第丨旋轉電極與第2旋轉電極之間。 在此,藉由愈朝後段愈變小的設定以磁性開關SR2, SR3及電容器ci,C2所構成的各段的容量移行型電路的 進行著流在各段的電流脈衝的脈寬依次變窄的脈衝 壓縮動作’成爲在第1旋轉電極與第2旋轉電極間可實現 短脈衝強的放電,而對電漿的輸入能量也變大。 (4 )原料供應及原料氣化機構 用以放射極端紫外光的高溫電漿原料2 1,是從設於腔 1的原料供應單元20以液體或固體的狀態,供應於放電領 域(爲第1旋轉電極n的周緣部的邊緣部分與第2旋轉 電極1 2的周緣部的邊緣部分之間的空間,而發生放電的 空間)近旁。具體上,高溫電漿原料2 1是除了放電領域 之外的空間,而被供應於被氣化的高溫電漿原料供應於可 達到至放電領域的空間。 -56 - 200908815 上述原料供應單元20是例如設於腔1的上部壁,而 高溫電漿原料2 1是作成液滴狀供應(滴下)於上述放電 領域近旁的空間。 作成液滴狀被供應的高溫電漿原料是被滴下,而到達 至放電領域近旁的空間之際,藉由從第丨雷射源23 a所放 出的第1雷射射束(原料用雷射射束)23被照射使之氣化 〇 作爲放出第1雷射射束23的第1雷射源2 3 a例如可 採用二氧化碳雷射源、或YAG雷射、YV04雷射、YLF雷 射等的固體雷射源、ArF雷射、KrF雷射、XeCl雷射等的 準分子雷射源等。 又’在本實施例中,作爲照射於高溫電漿原料2 1的 能量射束來照射雷射射束,惟代替雷射射束,作成將離子 射束、電子射束照射在高溫電漿原料也可以。 如上述地,藉由第1雷射射束23的照射所氣化的高 溫電漿原料,是以第1雷射射束23所入射的高溫電漿原 料表面的法線方向作爲中心擴展。因此,第1雷射射束2 3 是氣化後的高溫電漿原料朝放電領域的方向擴展的方式, 必須照射對於面臨於高溫電漿原料表面的放電領域的一側 〇 在此’利用第1雷射射束2 3的照射被供應於放電領 域的氣化後的高溫電漿原料中,未有助於依放電所致的高 溫電漿形成者的一部分,或電漿形成的結果分解生成的原 子狀氣體的線束的一部分,是作爲碎屑而與EUV光源裝 -57- 200908815 置內的低溫度接觸,並堆積。 所以,氣化後的高溫電漿原料不會朝EUV聚光鏡的 方向擴展的方式,供應高溫電漿原料2 1,且將第1雷射射 束23照射在高溫電漿原料2 1較佳。 具體上,高溫電槳原料2 1供應於一對電極1 1,1 2與 EUV聚光鏡2之間的空間,且除了放電領域之外的空間, 而被氣化的高溫電漿原料可到達至放電領域的空間的方式 ,原料供應單元20被調整。又,第1雷射射束23對於被 供應的該空間的原料,而氣化後的高溫電漿原料朝放電領 域的方向擴展地對於高溫電漿原料表面面臨於放電領域的 一側進行照射的方式,第1雷射源2 3被調整。 藉由如以上所述的調整,成爲可抑制碎屑朝EUV聚 光鏡2進行的情形。 如上述地,藉由第1雷射射束23的照射被氣化的高 溫電漿原料是以第1雷射射束23所入射的高溫電漿原料 表面的法線方向作爲中心而擴展。詳細地,藉由第1雷射 射束23的照射被氣化而飛散的高溫電漿原料的密度,是 上述法線方向成爲最高密度,每當從上述法線方向增加角 度則會降低密度。 根據上述,高溫電漿原料2 1對於放電領域的供應位 置,以及第1雷射射束23的照射能等的照射條件,是被 供應於放電領域的氣化後的高溫電漿原料的空間密度分布 ,成爲在放電領域中高溫電漿原料被加熱激勵後有效率地 取出EUV放射的條件的方式,適當地被設定。 -58- 200908815 又,在供應有高溫電漿原料的空間下方,設置回收未 氣化的高溫電漿原料的原料回收手段25。 (5 ) EUV光聚光部 利用放電部所放出的EUV光,是利用設於eUV光聚 光部的斜入射型的EUV聚光鏡2被聚光,而由設於腔1 的EUV光取出部7被導入省略圖示的曝光裝置的照射光 學系。 一般該斜入射型的EUV聚光鏡2是嵌套型地高精度 地配置複數枚薄的凹面鏡的構造。各凹面鏡的反射面的形 狀是例如有旋轉橢圓面形狀、旋轉拋物面形狀、瓦爾特氏 型形狀、各凹面鏡是旋轉體形狀。在此,瓦爾特氏型形狀 是指光入射面,爲由光入射側依次地旋轉雙曲面與旋轉橢 圓面,或旋轉雙曲面與旋轉拋物面所成的凹面形狀。 上述的各凹面鏡的基體材料是例如鎳(Ni )等。反射 波長極短的EUV光之故,因而凹面鏡的反射面是構成作 爲極良好的平面。被施以該平滑面的反射材,是例如釕( Ru )、鉬(Mo )、及铑(Rh )等的金屬膜。在各凹面鏡 的反射面,緻密地塗佈著此種金屬膜。 藉由如此地構成,EUV聚光鏡是良好地反射0°〜25°的 斜入射角度的EUV光,且成爲可進行聚光。 (6 )碎屑收集器 在上述的放電部與EUV光聚光部之間’爲了防止 -59- 200908815 EUV聚光鏡的損傷,設置捕捉與放電後生 觸的第1,第2旋轉電極1 1,1 2的周緣部 被濺鑛所生成的金屬粉等的碎屑、或起因 中的EUV放射種籽的Sn或Li等的碎 EUV光所用的碎屑收集器。 如上述地,在表示於第9圖中,在表 例的EUV光源裝置,碎屑收集器是由氣ί 集器3所構成。 氣霧13b是藉由從氣體供應單元13 被供應於腔1內的氣體所構成。 在第9圖表示氣霧機構。噴嘴1 3 a是 出氣體的開口是成爲細長的四方形狀。當 單元1 3供應於噴嘴1 3 a,則片狀的氣體從 被放出,而形成有氣霧13b。氣霧13b是 進行方向,俾抑制碎屑到達至E U V聚光鏡 於氣霧13b的氣體,是對於EUV光其透 佳,例如使用氦(He )、氬(Ar )等稀有 等。 又,在氣霧13b與EUV聚光鏡2之 集器3。針對於輪型收集器3,例如在專〗 爲「金屬收集器」。輪型收集器3是不會 所放射的E U V光的方式,由設於高溫電 方向的複數板,及支撐該板的環狀的支撐 在氣霧13b與EUV聚光鏡2之間設 成的高溫電漿接 藉由該高溫電# 於高溫電漿原料· 屑等,而僅通@ 示於7的本實施 _ 1 3 b及輪型收 經由噴嘴1 3 a而 長方體形狀,放 氣體從氣體供應 噴嘴1 3a的開口 變更上述碎屑的 〖2。在此被使用 射率高的氣體較 氣體或氫(H2) 間,設有輪型收 flj文獻8記載作 遮住從高溫電漿 漿發生領域的徑 體所構成。 置此種輪型收集 -60- 200908815 器3則使得高溫電漿與輪型收集器3之間的壓力會增加。 當壓力增加,則存在於該狀況的氣霧的氣體密度會增加, 而會增加氣體原子與碎屑之相撞。碎屑是藉由重複相撞, 會減少運動能。因此,碎屑相撞於EUV聚光鏡2之際的 能量會減少,成爲可減少EUV聚光鏡2的損傷。 又,將氣體供應單元1 4連接於腔1的聚光空間1 b側 ,而導入與EUV光的發光無關的緩衝氣體也可以。從氣 體供應單元1 4所供應的緩衝氣體,是從EUV聚光鏡2側 通過輪型收集器3之後,再經過輪型收集器保持用隔間壁 3 a與隔間壁1 c之間的空間而從真空排氣裝置4被排出。 藉由產生如此氣體的流動,防止在輪型收集器3未能捕捉 到的碎屑朝EUV聚光鏡2側,而可減少碎屑所致的EUV 聚光鏡2的損傷。 在此,除了緩衝氣體之外,將氯氣(Cl2 )等的鹵素 氣體或氫氣基從氣體供應單元1 4供應於聚光空間也可以 。此些氣體是無法以碎屑收集器除去而與堆積在EUV聚 光鏡2的碎屑反應而功能作爲除去該碎屑的洗淨氣體。因 此,成爲可抑制所謂依碎屑堆積所致的EUV聚光鏡的反 射率降低的功能降低。 (7 )隔間壁 放電空間1 a的壓力,是被設定成良好地發生用以加 熱激勵利用原料用雷射射束照射被氣化的高溫電漿原料的 放電,必須保持在某一程度以下的真空氣氛。 -61 - 200908815 一方面,聚光空間1 b是必須以碎屑收集器來減少碎 屑的運動能量之故,因而必須以碎屑收集器部分維持所定 壓力。 在第9圖及第1 0圖中,由氣霧流動所定氣體,以碎 屑收集器3維持所定壓力,而減少碎屑的運動能量。爲了 此,聚光空間是作爲結果必須維持在數1 OOPa左右的壓力 的減壓氣氛。 在此,在本發明的EUV光源裝置中,設有將腔1內 區劃成放電空間與聚光空間的隔間壁1 c,在該隔間壁1 c ,設有空間地連結兩空間的開口。開口是功能作爲壓力阻 力之故,因而以真空排氣裝置4排出放電空間,而以真空 排氣裝置5排出聚光空間之際,藉由適當地考慮來自氣霧 1 3b的氣體流量,開口的大小,各真空排氣裝置的排氣能 力等,成爲可將放電空間1 a維持在數Pa,而可將聚光空 間1 b維持在適當的壓力。 (8 )原料監測器 原料監測器20a是監測由上述的原料供應單元20作 成液滴狀被滴下的原料位置。例如第9圖所示地,監測從 原料供應單元20所滴下的原料,到達至原料監測器20a 近旁的位置P 1的時機。如下述地,利用該監測結果,求 出從原料到達至位置P 1的時機到達至第1雷射射束(原 料雷射射束)23所照射的位置P2爲止的時間。監測環是 例如使用公知的雷射計測法。原料的檢測訊號是由原料供 -62 - 200908815 應監測器2〇a送訊至控制部26。如上述地原料2i是作成 液滴狀被滴下之故,因而原料檢測訊號是成爲斷續性的脈 衝訊號。 (9 )極端紫外光(EUV )光源裝置的動作 本實施例的EUV光源,是被使用作爲曝光用光源時 ’例如如以下地進行動作。第13圖,第14圖是表示本實 施例的動作的流程圖’第1 5圖是表示流程圖,以下藉由 第1 3圖至第1 5圖來說明本實施例的動作。 E U V光源裝置的控制部2 6是記憶表示於第丨圖及第 2圖的時間資料Atd、Ati、Atg。 亦即’ Atd是從觸發訊號輸入至脈衝電力供應手段( 脈衝電力發生器8 )的交換手段的時機(時刻Td ),交換 手段採用導通狀態而電極間電壓到達至臨界値V p爲止的 時間。Ati是開始放電之後,流在電極間的電流大小到達 至臨界値Ip爲止的時間。Atg是從第1雷射射束被照射在 原料的時機一直到空間密度分布爲所定分布的氣化原料的 至少一部分到達至放電領域爲止的時間。 一般,若被施加於放電電極1 1,12的電壓V大,則 放電電極間的電壓波形的上昇變快。因此,上述的A t d是 成爲依存於被施加於放電電極1 1,1 2的電壓V。E U V光 源裝置的控制部26,是將以實驗等事先求得的電壓V與 時間Atd之間係記憶作爲表格。 又,EUV光源裝置的控制部2 6記憶從原料到達至所 -63- 200908815 定位置(例如,第12圖的P1)的時機,—直到達至第ι 雷射射束(原料用雷射射束)23照射至原料2丨的位置( 例如第1 2圖的P2 )爲止的時間Atm。 又’控制部2 6是記憶修正時間α、β及從主觸發訊號 輸出至脈衝電力供應手段的交換手段的時機,一直到該主 觸發訊號輸入至脈衝電力供應手段的交換手段而使得交換 手段成爲導通的時機爲止的延遲時間d 1。針對於該修正時 間α ’ β,如下所述。 首先’來自EUV光源裝置的控制部的候用指令被送 訊至真空排氣裝置5、真空排氣裝置4、氣體供應單元13 、氣體供應單兀14、第1電動機22a、第2電動機22b( 第13的步驟S101、第15圖的S201)。 受訊候用指令的真空排氣裝置5、真空排氣裝置4、 以及氣體供應單元1 3、氣體供應單元1 4是開始動作。亦 即’真空排氣裝置4進行動作,放電空間成爲真空氣氛。 一方面,真空排氣裝置5進行動作,同時氣體供應單元13 進行動作而形成有氣霧13b,又氣體供應單元14進行動作 ,使得緩衝氣體,洗淨氣體供應於聚光空間1 b內。結果 ,聚光空間lb到達至所定壓力。又,第1電動機22a、第 2電動機22b進行動作,而旋轉第1旋轉電極1 1、第2旋 轉電極1 2。以下,將上述的動作狀態總稱爲候用狀態(第 13圖的步驟S102、第15圖的S202)。 EUV光源裝置的控制部26,是在此種候用狀態後, 將動作開始指令訊號送訊至原料供應單元20及原料監測 -64- 200908815 器20a (第13圖的步驟S103、第15圖的S203)。 受訊動作開始指令訊號的原料供應單元20,是將進行 EUV放射所用的液體狀或固體狀高溫電漿原料(例如液體 狀的錫)作成液滴狀而開始滴下。一方面,受訊動作開始 指令訊號的原料監測器20a是開始監測動作,當原料到達 至下述的位置P 1時,則將原料檢測訊號發訊至EUV光源 裝置的控制部2 6 (第1 3圖的步驟S 1 0 4、第1 5圖的S 2 0 4 )° 又,在該時機,所滴下的原料21是不會被第1雷射 射束(原料雷射射束)2 3照射之後,因而藉由原料回收手 段2 5直接被回收。 EUV光源裝置的控制部26,是將候用完成訊號送訊 至曝光裝置的控制部27 (第13圖的步驟S105、第15圖 的 S 2 0 5 )。 由受訊候用完成訊號的曝光裝置的控制部27、EUV 光源裝置的控制部26,是受訊發光指令。又,曝光裝置側 控制EUV放射的強度時,則在本發光指令,也包含著 EUV放射的強度資料(第1 3圖的步驟S〗〇6、第1 5圖的 S206 )。 E U V光源裝置的控制部2 6,是將充電控制訊號送訊 至脈衝電力發生器8的充電器CH。充電控制訊號是例如 放電開始時機資料訊號等所構成。如上述地,E U V放射的 強度資料包含於來自曝光裝置的控制部27的發光指令時 ’則對於主電容器C0的充電電壓資料訊號也包含在上述 -65- 200908815 充電控制訊號。 例如,事先藉由實驗等求出EUV放射強度與對主電 容器C 0的充電電壓的關係,製作儲存兩者的相關的表格 ° EUV光源裝置的控制部26,是記憶著該表格,依據包 含從曝光裝置的控制部27受訊的發光指令的EUV放射的 強度資料,由表格叫出主電容器C0的充電電壓資料。又 ’依據所叫出的充電電壓資料,EUV光源裝置的控制部 26’是將包含對主電容器C0的充電電壓資料訊號的充電 控制訊號送訊至脈衝電力發生器的充電器CH (第1 3圖的 步驟S107、第15圖的S207)。 充電器CH是如上述地進行主電容器C0的充電(第 1 3圖的步驟S 1 0 8 )。 EUV光源裝置的控制部26是從制定開始運轉之後是 否爲最初的EUV光發生(稱爲初次脈衝)(第1 3圖的步 驟S109),而在初次脈衝時,則由步驟S109移行至步驟 S 1 1 0。又若不是初次脈衝時,則移行至步驟S 1 1 6。 在步驟S 1 1 0,EUV光源裝置的控制部2 6,是計算將 主觸發訊號輸出至脈衝電力供應手段的交換手段的時機, 控制第1雷射源23a的動作對於第1雷射控制部23b的第 1觸發訊號的送出時機,控制第2雷射源24a的動作對於 第2雷射控制部24b的第2觸發訊號的送出時機。 初次脈衝時,則無法使用下述的電壓計數器、電流計 數器的計數値,而無法修正下述的反饋修正之故’因而依 據事先所記憶的時間資料^td、Δίί、Atg、Atm、dl、α、β -66 - 200908815 來決定上述時機。 又,如第1圖及第2圖所示地,實際上,以主觸發訊 號輸入於脈衝電力供應手段(脈衝電力發生器8 )的交換 手段而使得交換手段成爲導通的時機Td作爲基準,來設 定第1雷射射束23、第2雷射射束24所照射的時間τι、 T2較佳。 在本實施例中,事先求出從脈衝電力供應手段的交換 手段輸出主觸發訊號的時機Td’,一直到該主觸發訊號輸 入至脈衝電力供應手段的交換手段而使得交換手段成爲導 通爲止的時機T d的延遲時間d 1。之後,將主觸發訊號輸 出至脈衝電力供應手段的交換手段的時機Td’以上述延遲 時間d 1修正,求出交換手段成爲導通的時機Td。 一方面,從第1觸發訊號所送出的時機T 1 '一直到照 射第1雷射射束(原料用雷射射束)2 3爲止的延遲時間 d2,從第2觸發訊號所送出的時機T21—直到照射第2雷 射射束(起動用雷射射束)24爲止的延遲時間d3是與ns 次序相比較可忽略程度地小之故,因而在此並未加以考慮 〇 第 1雷射源23a、第2雷射源24a爲例如Q開關式 YAG雷射裝置等的情形。以將主觸發訊號輸出至脈衝電力 供應手段的交換手段的時機Td’作爲基準設定控制第1雷 射源2 3 a的動作的對於第1雷射控制部2 3 b的第1觸發訊 號的送出時機Τ Γ,控制第2雷射源2 4 a的動作的對於第 2雷射控制部24b的第2觸發訊號的送出時機T21,藉由 -67- 200908815 此,可實現以將主觸發訊號輸入至脈衝電力供應手段的交 換手段的時機Td作爲基準的第1雷射射束2 3、第2雷射 射束24被照射的時間T1、T2的設定。 以送訊主觸發訊號的時機作爲基準(時刻Td')時, 則對於第1雷射控制部23b的第1觸發訊號的送出時機 Τ Γ,對於控制第2雷射源24a的動作的第2雷射控制部 24b的第2觸發訊號的送出時機T2'是如下地被求出。 由第1圖及第2圖可知,第2雷射射束24所照射的 時機T2,是以脈衝電力供應手段的交換手段成爲導通的 時機T d作爲基準時,則成爲 T2 2 Td + At …(1) 。因此,以送訊主觸發訊號的時機Td’作爲基準時的 對於控制第2雷射源的動作的第2雷射控制部的第2觸發 訊號的送出時機T2',是成爲 T2' + d3 ^ ( Td' + d 1 ) +Atd .--(2) 在此,延遲時間d3是可忽略程度地較小之故,因而 第2觸發訊號的送出時機T2'是成爲 T2 ^ Td' + dl+Atd ·· (3) 在此,在電極間電壓確實地超過臨界値Vp的時機, 第2雷射射束未被照射的方式,將第2雷射射束所照射的 時機,比Atd稍微延遲也可。該延遲時間α定義作爲修正 時間,將式(3 )予以變形,則成爲 T2, g Td' + d 1+Atd + a …(4)。 在本實施例,爲作成爲 -68- 200908815 T2’ = Td' + d 1 +Atd + a ··· (5) 。又,當然,T2'的設定是並不被限定於(5)式者。 而滿足(4)式也可以。例如作成T2' = Td' + dl+Atd也可以 〇 一方面,由第1圖及第2圖,第1雷射射束23所照 射的時機T1,及第2雷射射束24所照射的時機T2是成 爲以下的關係。 T2 + Ati^ Tl+Atg^ Τ2 + Δίΐ + Δίρ …(6) 在本實施例中,在放電電流確實地超過臨界値Ip的 時機,第1雷射射束23被照射的方式,將第1雷射射束 23所照射的時機比Ati稍微延遲,將該延遲時間定義爲修 正時間β,來設定時機T1與T2的關係,則成爲 Τ2 + Δΐί + β = Τ1 + Atg …(7)。 在此,修正時間β是成爲 0 ^ β ^ Δίρ …(8 ) 又,當然,時機τ 1與Τ 2的關係的設定,是並不被限 定於(7 )式者,滿足(6 )式就可以,例如Τ2 + ΔΗ = Τ1 + Atg,或是 ’ T2 + Ati + Atp = Tl+Atg 也可以。 將(7)式變形成第1觸發訊號的送出時機ΤΓ與第2 觸發訊號的送出訊號之關係,則成爲 (T2' + d3) + Ati + p = (Tr + d2) + Atg ·· (9) 。在此,延遲時間d2、d3是可忽略地較小之故’因 而(9 )或是成爲 Τ2' + Δίΐ + β = Τ 1 ' + Atg -69- 200908815 Τ 1 ' = T2' + Ati + P-Atg ".(10) 。在(10)式代入(5)式,則成爲Pb» Pp (104). That is, by the self-magnetic field, a current 可 which can sufficiently compress the low-temperature plasma gas is formed. Further, the above-mentioned critical enthalpy Ip is also an electron temperature which can be used for a low-temperature electric propeller gas (the ion density in the electric-31 - 200908815 paddle is about 1 〜 17 to l 〇 2 (cm_3), and the electron temperature is about leV or less). The current 加热 is heated to 20 to 3 OeV or more. As described above, the low temperature plasma selectively supplied to the above fine discharge passage is formed by irradiating a laser beam to a solid or liquid high temperature plasma material. The irradiation conditions of the laser beam are appropriately set depending on the distance from the high-temperature plasma material disposed outside the discharge field to the discharge area. The irradiation energy is an energy that vaporizes a solid or liquid high-temperature plasma raw material, but does not excessively raise the electron temperature (※ as shown in Fig. 6, the electron temperature of the laser is slightly increased) For example, a range of 105 W/cm 2 to 10 16 W/cm 2 . By irradiating such a laser beam to a solid or liquid high-temperature plasma raw material, a high-temperature plasma raw material (low plasma gas) having an ion density equivalent to an EUV radiation condition and a low electron temperature can be obtained. It is continuously supplied between the electrodes during a period of about 1 〇μ5. In general, the conventional DPP method and the discharge duration of the LAGDPP method are around 2 μ3. That is, compared with the conventional discharge duration, the above-mentioned supply of the low-temperature plasma gas can be regarded as a stable continuous supply, and the low-temperature plasma selectively reaches the above-mentioned fine discharge channel, and the Ray is appropriately adjusted. Conditions such as the irradiation conditions of the beam, the arrangement of the high-temperature plasma material, and the like. By such adjustment, the vaporized high-temperature electric paddle material (low-temperature plasma gas) having good directionality flows, and the flow is set to be concentrated in the vicinity of the fine discharge passage. With such a configuration, the low-temperature plasma gas selectivity -32 - 200908815 is continuously supplied to the fine discharge channel. Further, when a solid or liquid high-temperature plasma raw material is placed, the energy of the discharge directly acts on the high-temperature plasma to change the conditions of the vaporized high-temperature plasma raw material. Therefore, the low density of the electron density without the EUV radiation condition and the low temperature of the electron temperature are selectively supplied continuously to the fine discharge channel. The low-temperature plasma gas supplied to the fine discharge channel is a self-beam effect of the above-mentioned current or a high-temperature plasma according to the heat of the self-magnetic field, and is radiated from the high-temperature electric paddle, EUV radiation It is through the (II) of Fig. 6, so that the compression effect according to the self-beam effect is smaller and the ratio of the closing effect to the heating engineering by the Joule heating is not the conventional DPP method. The LAGDPP method can also be EUV in the field of discharge with a small current flow. Even if a high-speed short pulse without discharging current can be efficiently input (ie, heating), the electric charge can be discharged. The current pulse is set to be longer and the compressed high temperature plasma is detached from the axial direction of the extruded electrical channel immediately after the plasma density gradient along the axis of the discharge channel. At the same time, the discharge channel is the result of the diameter, which causes the plasma density and electron temperature drop inside the discharge channel. At this time, it is known that EUV radiation is terminated. However, as described above, there is a steady flow of gas around the discharge channel, so that the electric charge in the discharge channel is in the discharge field, and the time method will be equivalent. The plasma gas is selected according to the critical 値I p combined effect is added EUV. The path is actually increased by the self-magnetic field rate. Also high current, radiation. Also, it has become. Therefore, the maximum compression of the enthalpy is mainly extended in the direction of the discharge, and the space of the low temperature plasma density drops rapidly from -33 to 200908815, and the low temperature plasma is supplied without time difference. Therefore, during the period in which the diameter of the discharge channel is not too expanded, the discharge channel is further tapered by the self-beam effect or the closing effect of the self-magnetic field, and the low-temperature plasma gas is heated to continue the EUV radiation as described above. Clause 7 (b), (c)]. The repetition of the self-beaming effect or the closing effect of the self-magnetic field is that the duration of the discharge current continues. Further, as described above, in the present invention, the high-speed short-pulse of the current is not required, so that the discharge current pulse can be set longer than the conventional one. That is, the self-beaming effect or the repetition of the closing effect of the self-magnetic field can be continuously maintained for a long period of time, so that long pulse of EUV radiation can be achieved. Further, hereinafter, the present invention utilizing the continuous self-beaming effect is referred to as a multi-self-beam method. D The D P P method using a conventional self-beam effect is a high-temperature plasma raw material gas having a low ion density supplied to the discharge field. (The initial state of the self-beam in Fig. 6). The low-density gas is filled in the same manner as the entire discharge vessel (discharge field). In the low-density gas atmosphere, the discharge channel of the initial plasma generated by the discharge is thicker to the diameter of the discharge vessel in the initial state, so that the discharge channel is thinned by the self-beam effect, and the initial stage is used. The plasma is made into a high-temperature plasma and becomes a current pulse requiring high power. Further, in order to improve the energy input efficiency of the discharge to the plasma, it is necessary to perform high-speed short-pulse of the discharge current. Therefore, the E U V emission ends with the self-beaming effect of the 丨, and the pulse width of the EUV radiation is about 200 ns. (Path 2 of Figure 38). In addition, in the conventional DPP method, the first self-beam is terminated, and in the field where the plasma density inside the electric channel is lowered, the low-density gas (high-temperature plasma raw material) is invaded. Therefore, it is thick and returns to the diameter of the initial state of the first self-beaming effect. Therefore, if multiple self-beams are applied, a large current is required for the first time. In fact, as described above, the discharge pulse is so long that the second self-beam cannot be performed after the end of the first self-beam. In the LAGDPP method, even if the path 3 from the beam effect map is used, EUV radiation occurs via the path 2. Laser irradiation of high-temperature plasma raw materials, low-density high temperature supply to the field of discharge. In the same manner as in the case of the DDP method, the initial electric paddle is generated by discharge at a low density, and the high-speed plasma is required to generate a high-rate current pulse current. Therefore, the EUV release effect is over. Further, as described in Patent Document 5, after the high-temperature plasma raw material gas irradiated by the LAGDPP laser beam is released, the high-temperature electricity that is heated and desorbed from the discharge region is large, and there is no efficiency. That is, in the conventional DPP method, LAGDPP is a long pulse of EUV radiation, such as Patent Document 6 or a special field, a separate plasma heating and compression engineering and compression maintenance system, after the plasma reaches the self-bundling state. The plasma current has a discharge channel in the discharge vessel which is a self-beam of the discharge path. The current is a short time of the tube speed, which becomes I, after the third 8th, that is, by the gas atmosphere of the plasma material. The initial plasma, in addition, must be shot in the first-time self-mode, using the discharge of the raw material gas in the process of the discharge, in order to control the project described in the document 7, the plasma to -35- 200908815 A method of supplying electric energy to the discharge space by the electric paddle current before the self-bundling state. However, when the self-magnetic field pressure of the current is taken as pP, if the current 的Pb ^ Pp (105) 値Ip2 is used, even if the current is self-pulping gas (maintained at the level of the low-temperature plasma gas) It is also possible to realize the above-mentioned critical 値Ιρ2, which is a current 可 which can be heated by an electron temperature of an ion density of 1017 to 102 (Cm or less). Fig. 8 is a diagram showing the timing of the self-beaming method and the EUV emission, and the following formula. Electric power is supplied between the electrodes, and in the timing tp at which the current starts to flow [Fig. 8 (a)] Ip2, the influence of the breaking magnetic field of the discharge channel becomes thin. Again, the comparison makes the critical 値IP and the above critical 値I p 2, The cross-sectional dimension of the discharge channel is the same as that of the above-mentioned timing tp, and the low-temperature plasma gas corresponding to the EUV radiation condition is selectively made to reach a large size, and the compression pressure that has to be used is taken as PB. The setting of the boundary is a long pulse that my magnetic field weakly compresses the expansion of the low temperature electric power without reducing the ion density EUV radiation. There is a plasma current that is a low-temperature plasma gas (electrical gas, electron temperature is leV 20~30eV or more, and low-temperature plasma half is used to illustrate the timing of non-self-beam t = to When the current I reaches the critical plane dimension, the current when the self-use multi-self-beam effect of the current is Ip 1 > Ip2 is large, so that the multi-self-beam effect is large. The fine discharge in the field of flow discharge with low ion temperature and low electron temperature is -36-200908815. Further, as described above, the low-temperature plasma gas is selectively supplied continuously to the fine discharge channel. It is supplied to the fine discharge channel. The low-temperature plasma gas is hardly compressed by a current of a threshold 値Ip2 or more, and is heated to a high-temperature plasma in a state where the low-temperature plasma gas expands and the ion density is maintained without being reduced. EUV is emitted from the high-temperature plasma. That is, the ion density of the low-temperature plasma is such that the EUV radiation condition is satisfied at the beginning, and thus heating is performed while maintaining the ion concentration while being realized. UV radiation [(II) path of Fig. 6] Therefore, unlike the conventional DPP method, the LAGDDP method has a large current, and a small current flow in the discharge field also enables EUV radiation. It is known that the high-speed moment pulsing of the discharge current is not performed, and energy can be efficiently input (that is, heated) to the plasma. Therefore, it is possible to set the discharge current pulse to be longer than the conventional one. Here, there is a steady flow of low-temperature plasma gas around the discharge channel, so that a low-temperature plasma gas having a predetermined ion density is stably supplied in the discharge channel. Therefore, the discharge current continues during the discharge channel. Heating by the low-temperature plasma gas is maintained, and EUV radiation is continued. [Fig. 8(b)(c)]. In this case, the high-speed moment pulse of the current is also not required, so that the discharge current can be pulsed. Compared with the conventional one, the setting is long, and the heating of the low-temperature plasma gas and the generation of the high-temperature plasma can be maintained continuously for a long period of time, so that the long pulse of the EUV radiation can be realized. The critical 値Ip2 of the current is made to compress the low-temperature plasma gas (maintained at a low temperature of the low-temperature electric propeller gas and the ion density is reduced) by the self-magnetic field -37-200908815, so the low-temperature plasma is It is heated so as not to shrink in appearance, and becomes a high-temperature plasma. Therefore, this mode is hereinafter referred to as a non-self-bundling method. Here, whether or not the multi-self-beam method or the non-self-beam method described above is a driving current 値The same is determined by the size of the discharge channel. If the shape of the discharge electrode is selected, the beam diameter of the irradiated laser light, etc., the discharge channel becomes a multi-self-bundling method, and the discharge channel becomes thicker. In the non-self-bundling method, the diameter of the discharge channel is larger than that of the multi-self-beam method, and the size of the high-temperature plasma is also larger than that of the multi-beam method. That is, since the size of the EUV radiation source is larger than that of the multi-self beam method, when the present invention is applied to an EUV light source device for exposure, an EUV source can be used in a multi-self-beam method than a non-self-beam method. The size is made smaller and is therefore preferred. When the EUV light is extracted by the multi-beam method, the equivalent energy conversion efficiency is roughly compared when the same EUV output is taken out from the beam at a time, and the peak-to-peak power input of the primary beam is reduced. Therefore, it is possible to suppress the peak power input of the counter electrode, and it is possible to reduce the occurrence of debris due to sputtering of the electrode. Also, the number of ions that contribute to EUV luminescence at one time is small. Therefore, the size of the light can be reduced, which is advantageous in the design of the exposure optical system. As described above, in the present invention, the long pulse of EUV radiation is achieved as follows. (i) A fine discharge channel is generated in advance in the discharge field. -38- 200908815 (ii) In the field of discharge, the energy beam is irradiated to a solid or liquid high-temperature plasma raw material to be vaporized to form a low-temperature plasma having an ion density equivalent to EUV radiation conditions and a low electron temperature. Gas (fuel vapor in Fig. 6: ion density is about 1017~102 () cm·3, and electron temperature is about leV or less). (iii) after that, when the discharge current 値 reaches a predetermined threshold I (Ip or IP2), the low-temperature plasma gas reaches the fine discharge channel, and the low-temperature plasma gas is selectively supplied to the fine discharge channel. Steady flow. As a result, the discharge of the low temperature plasma causes the temperature of the electron to rise. By the path 141 of Fig. 6, a high temperature plasma which satisfies the EUV radiation condition is formed to generate EUV radiation. (iv) Here, the low-temperature plasma gas is supplied to the discharge channel formed in advance, so that the discharge current pulse does not require a large current, and the high-speed short pulse 'is made the current pulse slower than the conventional current pulse. Long pulses are also available. EUV radiation is a period in which the fine discharge channel continues for a certain period of time. Therefore, the discharge current pulse is longer than the conventional DPP method and the LAGDPP method is formed, and the discharge current pulse is grown and pulsed, whereby the duration of the fine discharge channel can be compared with the conventional one. Long, the result is a long pulsed 〇 (V) of EUV radiation. As a multi-self-bundling method, when the critical 値 of the current is set to Ip, the diameter of the fine discharge channel is maintained during the time when the discharge current pulse continues. In the state where the relativeness of the pulsator is fine, the self-beam of the low-temperature plasma is repeated, and EUV radiation occurs. -39- 200908815 In addition, when the threshold 値 of the current is set to Ip2 as the non-self-bundling method, the diameter of the fine discharge channel is kept thicker than that in the multi-self-beam mode during the time when the discharge current pulse continues. In a relatively thin state, the heating of the low-temperature plasma is continued, and the plasma temperature and density necessary for EUV radiation are maintained, and EUV radiation occurs. Further, in the non-self-bundling method, as described above, the diameter of the discharge channel is larger than that of the multi-self-beam method, and thus the size of the high-temperature plasma is larger than that of the multi-self-beam-P--L- speed. Based on the above, in the present invention, the above problems are solved as follows. (1) An extreme ultraviolet light source device comprising: a raw material supply means for supplying a liquid or solid raw material; and a first energy beam irradiation means for irradiating the first energy beam to the raw material to vaporize the raw material And a pair of electrodes of the above-mentioned raw materials to be vaporized, which are heated and excited in the above-mentioned container to generate high-temperature plasma, and a pulse electric power supply means for supplying pulsed electric power to the electrodes; a collecting optical means for collecting the extreme ultraviolet light emitted from the high-temperature plasma generated in the discharge region of the discharge of the pair of electrodes, and extracting the extreme ultraviolet light of the concentrated ultraviolet light The take-out portion is characterized in that: the second energy beam is irradiated between the electrodes to which the electric power is applied, the discharge is started in the discharge region, and the discharge path is defined at a predetermined position in the discharge region. Beam irradiation means. The first energy beam irradiation means is a space other than the discharge area, and the first energy beam is irradiated to the material which is supplied to the space in the dischargeable region by the vaporized material. -40 - 200908815 (2) An extreme ultraviolet light source device comprising: a raw material supply means for supplying a liquid or solid raw material into the container; and irradiating the first energy beam to the raw material to vaporize the raw material The first energy beam irradiation means' and the pair of electrodes which are to be vaporized and which are heated and excited in the container to be heated and excited to generate a high temperature plasma, and which are separated by a predetermined distance, and 1 μ 3 or more a pulse power supply means for supplying pulse power to the electrodes; and a collecting optical means for collecting the extreme ultraviolet light emitted from the high-temperature plasma generated in the discharge region of the discharge of the pair of electrodes The extreme ultraviolet light extracting portion of the condensed extreme ultraviolet light is characterized in that: a discharge is started in the discharge region by irradiating a second energy beam between electrodes to which electric power is applied, and the discharge path is set A second energy beam irradiation means that defines a predetermined position in the discharge area. In the first energy beam means, the first energy beam is irradiated to the space 'out of the space in which the vaporized material can reach the discharge path', and the discharge path is defined in the space outside the discharge path. The material gas having an ion density approximately equal to the ion density of the extreme ultraviolet radiation condition is supplied to the above-described discharge path after the above electrodes. (3) In the above (丨), (2), the first energy beam irradiation means and the second energy beam irradiation means are at least a part of the vaporized raw material having a spatial density distribution of a predetermined distribution reaching the discharge field At the timing, the discharge current of the discharge generated in the discharge region is set to a predetermined threshold or more. The operation timing is set. (4) In the above (丨) (2) (3), the raw material supply by the raw material supply means is carried out by dropping the raw material into droplets by dropping -41 - 200908815 in the direction of gravity. (5) In the above (1), (2), (3), the raw material supply by the raw material supply means is carried out by continuously moving the above-mentioned raw material into a linear raw material and moving the linear raw material. (6) In the above (1), (2), (3), the raw material supply means is provided with a raw material supply disk, and the raw material supply means supplies the raw material as a liquid raw material 'the raw material is supplied to the raw material The supply disk 'rotates the supply of the raw material supply disk of the above-mentioned liquid raw material, and moves the supply portion of the liquid raw material of the raw material supply disk to the irradiation position of the energy beam. (7) In the above (1), (2), (3), the raw material supply means is provided with a capillary "material supply by a raw material supply means, and the raw material is used as a liquid raw material, and the liquid raw material is supplied to the liquid via the capillary. The irradiation position of the energy beam is performed. (8) In the above (1), (2) (3), a tubular nozzle is provided at an energy beam irradiation position of the raw material, and at least a part of the raw material vaporized by the irradiation of the energy beam is ejected by the tubular nozzle . (9) In the above (8), a narrow portion is provided in a part of the inside of the tubular nozzle. (10) In the above (1) (2) (3) (4) (5) (6) (7) (8), it is provided that the discharge direction is substantially the same as that in the discharge field. A magnetic field applying means that applies a magnetic field in parallel. (11) In the above (1) (2) (3) (4) (5) (6) (7) (8) (9) (1), the pair of electrodes are disc-shaped electrodes, and - 42- 200908815 The position at which the discharge is driven to the surface of the electrode changes. (12) In the above (11), the pair of disc-shaped electrodes ' are arranged such that the edge portions of the peripheral portions of the two electrodes face each other with a predetermined distance therebetween. (13) In the above (1) (2) (3) (4) (5) (6) (7) (8) ( 9 ) ( 1 〇) ( 1 1 ) ( 1 2 ), as the energy beam Use a laser beam. (1) A method for generating an extreme ultraviolet light by irradiating a first energy beam with a raw material of a liquid or solid for radiating extreme ultraviolet light in a container including a pair of electrodes therein to vaporize Deriving the discharge of a pair of electrodes by @i to heat the gasification of the above-mentioned raw material 'the formation of high-temperature plasma and extreme ultraviolet light generating extreme ultraviolet light generation' is characterized in that the first energy beam is in addition to the above discharge The space outside the field is irradiated to the raw material supplied to the @ between the dischargeable fields, and the second energy S beam irradiated to the discharge region is applied to the pair of electrodes. The discharge is started in the discharge region of the discharge and the discharge path is defined at a predetermined position in the discharge region. (1 5 ) A method for generating an extreme ultraviolet light by irradiating a first liquid beam of a liquid or solid material for radiating extreme ultraviolet light in a container including a pair of electrodes therein to vaporize And an extreme ultraviolet light generating method for generating an ultraviolet light by exciting the gasified material by the discharge of the pair of electrodes to generate a high-temperature plasma, wherein the first energy beam is in addition to the above The space outside the discharge area is irradiated to the raw material supplied to the space in the dischargeable area - 43-200908815, and the second energy beam irradiated in the discharge area is in the above The discharge region is discharged in the discharge region of the electrode, and a discharge path is defined at a predetermined position in the discharge region. After the discharge path is defined between the electrodes, the ion density is approximately the same by the first energy beam. a material gas equal to the ion density of the extreme ultraviolet radiation condition is supplied to the above discharge path, and the raw material gas is heated to satisfy the extreme ultraviolet ray by discharge Radiation temperature conditions, the more extreme ultraviolet 200ns occur continuously. (16) In the above (15), the spatial density distribution is such that at least a part of the vaporized raw material of a predetermined distribution reaches a discharge region, and a discharge current of a discharge generated in the discharge region is set to a predetermined threshold or more. The method of setting the irradiation timing of the first energy beam and the second energy beam is set. (1 7) In the above (16), the time data of the timing of starting the discharge and the time data of the timing at which the discharge current reaches the predetermined threshold 取得 are obtained, and the first energy beam and the second energy beam are corrected based on the two time data. The timing of the irradiation. (1) In the above (1 6 ) (丨7), the ith energy beam is irradiated once or more before the irradiation of the first energy beam and the second energy beam set at the irradiation timing. . In the present invention, the following effects can be obtained. (1) By appropriately setting the intensity of the first energy beam and the irradiation direction, the spatial density distribution of the high-temperature plasma material vaporized in the discharge region can be set to a predetermined distribution. Further, by irradiating the second energy beam at a predetermined position in the discharge region, the position of the discharge channel can be defined, and the positional stability of the EUV radiation can be improved. Further, by controlling the timing of the irradiation of the second energy beam, it is possible to control the timing at which the discharge is started. (2) by the irradiation of the first energy beam, the spatial density distribution reaches at least a part of the vaporized raw material of a predetermined distribution reaching the discharge region, and the discharge current of the discharge generated in the discharge region becomes a predetermined threshold or more. At the timing, the second energy beam is irradiated, and the irradiation timing of the first energy beam and the second energy beam is set, and efficient EUV radiation is possible. (3) In the field of discharge, by providing a magnetic field applying means for applying a magnetic field substantially parallel to the discharge direction generated between the pair of electrodes, the size of the high-temperature plasma that emits EUV can be reduced, and the emission time of the EUV is increased. may. (4) A pair of electrodes is formed as a disk-shaped electrode, and by rotating the drive so that the discharge occurrence position of the electrode surface can be changed, the wear rate of the electrode is eliminated, and the life of the electrode can be extended. (5) Obtaining the time data of the timing of the start of discharge and the time data of the timing at which the discharge current reaches the predetermined threshold ,, and correcting the timing of the irradiation of the first energy beam and the second energy beam based on the two time data, Efficient EUV radiation is achieved. (6) Before the irradiation of the first energy beam and the second energy beam with the irradiation timing set, the first energy beam is irradiated to the raw material once or more, and discharge is likely to occur between the discharge electrodes. The expected timing -45-200908815 can be reliably discharged. (7) Forming a fine discharge channel in advance in the discharge field, and selectively supplying a stable flow corresponding to the ion density of the EUV release member and the low temperature electron temperature to the fine discharge channel to discharge the low temperature In the case of EUV radiation, the electric current does not require the conventional DPP method, and the flow of the LAGDPP method makes it possible to conduct radiation even if a small current flows in the discharge field. Further, as is conventionally known, the high-speed short pulse of the discharge current is not performed so that energy can be efficiently input to the plasma. Therefore, it is possible to set the current pulse to be longer than the conventional one. Further, the discharge current pulse forms a discharge circuit in a manner that is longer than the conventional DPP method and LAGDPP, and the discharge current pulse is made into a pulse, so that the duration of the fine discharge channel can be made longer than conventionally. As a result, Long pulsed EUV radiation can be achieved. For example, if the duration of the discharge channel is at least 1 or more, the time during which the discharge channel continues can be surely made to be more than 200 ns. If the continuation of the discharge channel is set to 1 or more, the continuation time of EUV emission is obtained. The conventional EUV emission continues for 200 ns) and it is made for a long time. (8) In the long pulse, the discharge current does not need to be in a conventional manner, and the large current of the LAGDPP mode does not require the discharge current to be pulsed. Therefore, the heat load to be applied to the electrode is made smaller than conventionally, and the occurrence of debris can be suppressed. The field is shot, and the EUV is discharged, and the discharge mode is also long. It is possible to maintain the self-bundling state of high-temperature plasma as long as the high-frequency DPP is compared to -46-200908815 (9), so it is not necessary to control the plasma current waveform. A large current flows in the discharge space. Further, in order to maintain the self-beam effect, it is not necessary to change the waveform of the plasma current, and thus high-precision synchronous control or current control is not required. (1 〇) The energy beam for fixing the discharge path is irradiated. The discharge path (discharge channel) is used to fix the radiation path by the energy beam, thereby improving the positional stability of the point where the EUV radiation occurs. [Embodiment] 1 . (Embodiment) Fig. 9 and Fig. 10 show the configuration (cross-sectional view) of an extreme ultraviolet (EUV) light source device according to an embodiment of the present invention. Fig. 9 is a front view showing the EUV light source device of the present embodiment, and EUV radiation is taken out from the left side of the same figure. Fig. 10 is a plan view showing the EUV light source device of the present embodiment. The EUV light source device shown in Figs. 9 and 10 is a cavity 1 having a discharge vessel. The chamber 1 is divided into two large spaces via a partition wall 1c having an opening. A discharge unit is disposed in one of the spaces. The discharge portion is a heating excitation means for exciting the high-temperature plasma raw material containing the EUV radiation seed. The discharge portion is constituted by a pair of electrodes 1, 1, 1 2 and the like. In the other space, the EUV light emitted by the high-temperature plasma generated by the concentrating high-temperature plasma material is heated and excited, and is set in the cavity! The EUV take-out portion 7 is guided to the EUV condensing mirror 2 of the illuminating optical-47-200908815 system of the exposure apparatus (not shown), and the debris generated by the result of suppressing the plasma generated by the discharge is moved toward the concentrating portion of the EUV light. Debris collector. In the present embodiment, as shown in Figs. 9 and 10, the debris collector is constituted by the air curtain 13b and the wheel type collector 3. Hereinafter, the space in which the discharge portion is disposed is referred to as a discharge space 1 a, and the space in which the E U V condensing mirror is disposed is referred to as a condensed space i b . The vacuum exhaust unit 4 is connected to the discharge space 1a, and the vacuum exhaust unit 5 is connected to the condensing space lb. Further, the wheel type collector 3 is held in the condensing space 1b of the chamber 1 by, for example, the wheel type collector holding partition wall 3a. That is, in the example shown in Fig. 9, Fig. 10, the concentrating space lb is divided into two spaces by the wheel type collector holding partition wall 3a, and in Fig. 9, In Fig. 10, the discharge portion is shown to be larger than the EUV concentrating portion, but for the sake of easy understanding, the actual size relationship is not as shown in Fig. 9, which is shown in Fig. 10. In fact, the EUV concentrating unit is also more than the discharge unit. That is, the condensing space 1 b is larger than the discharge space 1 a. Hereinafter, each unit of the EUV light source device of the present embodiment and its operation will be described. (1) Discharge section The discharge section is composed of a first discharge electrode 11 made of a metal disk-shaped member and a second discharge electrode 12 of a disk-shaped member of the same metal. The first and second discharge electrodes 1 1,1 2 are made of a high-melting point metal such as tungsten, molybdenum or tantalum, and are disposed to face each other only at a predetermined distance. Here, at -48 to 200908815, one of the two electrodes 11, 12 is a ground side electrode, and the other is a high voltage side electrode. The surfaces of the two electrodes 11, 12 may be arranged on the same plane. However, as shown in Fig. 1, the discharge is likely to occur. When the electric power is applied, the edge portion of the peripheral portion where the electric field is concentrated is only separated. It is preferable that the distances are arranged to face each other. That is, it is preferable that the electrodes are arranged so that the imaginary planes including the surfaces of the electrodes intersect. Further, the predetermined distance is the distance at which the distance between the edge portions of the peripheral portion of the two electrodes is the shortest portion. As described below, when pulse power is applied to the electrodes 11 and 12 by the pulse power supply means, discharge occurs at the edge portion of the peripheral portion. In general, a large amount of discharge occurs in the shortest portion between the edge portions of the peripheral portions of the two electrodes 1 1,1 2 . It is assumed that the case where the surfaces of the two electrodes 11, 12 are disposed on the same plane is considered. At this time, the predetermined distance is the distance at which the distance between the side faces of the electrodes becomes the shortest portion. At this time, the position at which the discharge occurs is an imaginary contact line formed when the side surface of the disk-shaped electrode is in contact with the imaginary plane perpendicular to the side surface. The discharge can occur anywhere on the imaginary contact line of each electrode. Therefore, when the surfaces of the two electrodes are arranged on the same plane, the effective electric position is unstable. On the other hand, as shown in Fig. 10, the edge portions of the peripheral edge portions of the respective electrodes 1 1, 1 2 are disposed to face each other with only a predetermined distance therebetween. As described above, the shortest distance between the edge portions of the peripheral portions of the two electrodes 11, 12 causes a large amount of discharge, thereby stabilizing the discharge position. Hereinafter, a space in which discharge between two electrodes occurs is referred to as a discharge region. -49- 200908815 As described above, the edge portions of the peripheral edge portions of the respective electrodes 1 1, 1 2 are arranged to face each other only at a predetermined distance. When viewed from above as shown in Fig. 10, the first and second sides are included. The position at which the hypothetical plane of the surface of the second discharge electrode intersects is the center. The two electrodes are arranged radially. In the tenth diagram, the longest portion of the edge portion of the peripheral portion of the two electrodes arranged radially is the opposite side of the EUV condensing mirror described below when the intersection of the assumed planes is the center. Here, the longest portion between the edge portions of the peripheral portions of the two electrodes 1 1, 1 2 which are radially arranged may be disposed on the same side as the EUV condensing mirror 2 when the intersection of the assumed planes is the center. However, in this case, the distance between the discharge field and the EUV concentrating mirror 2 becomes long, and this component also reduces the EUV concentrating efficiency without being practical. The EUV light source device of the hybrid type of the present embodiment is a high-temperature electric paddle generated by a high-temperature plasma vaporized by irradiation of a first laser beam (field laser beam) by a discharge current. EUV radiation light. The heating excitation means for the high-temperature plasma raw material is a large current due to discharge occurring between a pair of electrodes 11.1. Therefore, the electrodes 1 1,1 2 are subjected to a large thermal load accompanied by discharge. Further, since the high temperature plasma is generated in the vicinity of the discharge electrode, the electrodes 11, 12 are also subjected to a thermal load from the plasma. With this thermal load, the electrodes are slowly worn away to cause metal debris. When the EUV light source device is a light source device as an exposure device, EUV radiation emitted from the high temperature plasma is collected by the EUV condensing mirror 2, and the concentrated EUV radiation is emitted to the exposure device side. The metal scrap -50- 200908815 is the EUV light reflectance which deteriorates the E U V condensing mirror 2 while degrading the e u V condensing mirror 2. Further, the electrode Π, 12 is slowly worn, and the shape of the electrode is changed. As a result, the discharge generated between the pair of electrodes 1 1, 1 2 is gradually unstable, and the occurrence of EUV light is also unstable. When the above-described EUV light source device of the hybrid type is used as a light source of a mass production type semiconductor exposure device, the electrode consumption as described above is suppressed, and it is necessary to extend the electrode life as much as possible. In order to cope with such a request, in the EUV light source device shown in Fig. 9 and Fig. 10, the first electrode 11 and the second electrode 12 have a disk shape, and are rotatably formed at least during discharge. That is, by rotating the first and second electrodes 11, 12, the position at which the pulse discharge occurs in both electrodes changes every pulse. Therefore, the thermal load received by the first and second electrodes 1 1, 12 is reduced, so that the wear rate of the electrodes 1 1, 1 2 is reduced, and the life of the electrode is prolonged. Hereinafter, the first electrode 1 i is also referred to as a first rotating electrode, and the second electrode 12 is also referred to as a second rotating electrode. Specifically, the first rotating electrode 11 on the disk and the center portion of the second rotating electrode 1 2 are formed. The rotation shaft 22e' of the first electric motor 22a and the rotation shaft 22f of the second electric motor 22b are attached, respectively. The first electric motor 22a and the second electric motor 22b rotate the respective rotating shafts 22e and 22f, the first rotating electrode 11, and the second rotating electrode 12. Also, the direction of rotation is not particularly regulated. Here, the rotating shafts 2 2 e, 2 2 f are introduced into the chamber 1 via, for example, mechanical seals 22c, 22d. The mechanical seals 22c, 22d are -51 - 200908815 to maintain the rotation of the rotary shaft under the reduced pressure atmosphere in the chamber 1. As shown in Fig. 9, the first rotating electrode 1 1 is partially immersed in the conductive first container 1 1 b in which the conductive feeding molten metal 1 1 a is accommodated. In the same manner, the second rotating electrode 1 2 is partially immersed in the conductive second container 12b in which the conductive feeding molten metal 1 2a is housed. The first container 1 lb and the second container 12b are connected to the power generator 8 of the pulse power supply means via the insulating power introduction portions 1 1 C, 1 2C which can maintain the pressure-reduced atmosphere in the chamber 1. As described above, the first and second containers lib, 12b and the feeding molten metal 11a, 12a are electrically conductive, and a part of the first rotating electrode 11 and a part of the second rotating electrode 12 are immersed in the feeding. Since the molten metal 11a, 12a is applied to the first container Ub and the second container 12b from the pulse power generator 8, the pulsed electric power is applied between the first rotating electrode 11 and the second rotating electrode 12, Pulsed power. Further, as the feeding molten metal 11a, 12a, the metal which does not affect the EUV emission is used when discharging. Further, the feeding molten metal na, 1 2a is a cooling means that also functions as a discharge portion of each of the rotating electrodes 1, 1, 2 2 . In the first container lib, the second container 12b is provided with a temperature adjustment means for maintaining the molten metal in a molten state. (2) Discharge start mechanism In the EUV light source device of the present embodiment, a laser beam of the second laser beam (starting laser beam) 24 is irradiated at a predetermined position in the discharge area - 52-200908815 2 laser The source 24a and the second lightning control unit 24b that controls the operation of the second laser source 24b. As described above, the edge portions of the peripheral edge portions of the respective rotating electrodes 1 1, 1 2 are disposed to face each other at a predetermined distance. Thus, the shortest portion between the edge portions of the peripheral portions of the two electrodes 1 1 12 is generated. Discharge. Therefore, the discharge position is stabilized, however, if the edge portion is deformed by abrasion due to discharge, the stability of the discharge position is lowered. Here, when the starting laser beam 24 is condensed at a predetermined position in the discharge region, the conductivity is lowered by electron emission near the laser focus. Therefore, the discharge channel position is set at the set laser focus. Therefore, the positional stability of the occurrence point of EUV radiation can be improved. As the first electric light source 24a that emits the second laser beam (starting laser beam) 24, for example, a solid-state laser source such as a carbon dioxide laser source, a YAG laser YV04 laser, or a YLF laser, or an ArF can be used. Excimer laser sources such as laser, KrF, and XeCl laser. Further, in the present embodiment, as the energy beam irradiated to a predetermined spot in the discharge field, the laser beam is irradiated, but instead of the laser beam, the beam may be irradiated to the high-temperature plasma material. An example of condensing for the second laser beam (starting laser beam) 24 is shown in Fig. 1 . Fig. 11(a) is a view showing an example in which the second laser beam is focused on a predetermined spot in the discharge area. As the condensing light system 24c', for example, a convex lens 24d is used. The dielectric breakdown between the electrodes is induced by spotting the second laser beam 24 at a predetermined point in the discharge region near the electrode. Here, at the laser focus (light-converging point), the edge 5 is reduced by the sub-beam of the electric potential 2, and the conductivity is lowered by the electron emission. Therefore, the position of the discharge channel is defined at the position of the spot where the laser is set. That is, by fixing the occurrence point of the dielectric breakdown by laser irradiation, the position of the discharge channel is fixed in the localized field of the discharge field. Therefore, the positional stability of the occurrence point of EUV radiation can be improved. In particular, by performing spot concentrating, the occurrence point of EUV radiation can be made small. The 1st (1)th diagram shows an example in which the second laser beam 2 4 is line-collected to a predetermined point in the discharge area. As the collecting optical system 24b, for example, two cylindrical lenses 24e, 24f are used. As is known, a cylindrical lens has a function of collecting or diffusing light only in one axial direction. The two cylindrical lenses 24e and 24f shown in Fig. 11(b) have a function of concentrating the second laser beam 24 in one axial direction. Further, the two cylindrical lenses are in a state in which the axial directions of the laser beams 24 for collecting light are orthogonal to each other. The dielectric breakdown between the electrodes is induced by linearly concentrating the second laser beam 24 at a predetermined point in the discharge region near the electrode. As in the case of spotlighting, the position of the discharge channel is defined on the concentrated light. That is, the position of the discharge path of the second laser beam 24 is fixed by laser irradiation so that the position of the discharge path is fixed in the localized field of the discharge field. Therefore, the positional stability of the point where the EUV radiation is generated can be improved. (3) The pulse power generator 8 of the pulse power generator pulse power supply means is a magnetic pulse compression circuit section formed by a capacitor and a magnetic switch, and has a short pulse width. Pulse-54-200908815 The first container 1 1 b and the first rotating electrode 11 and the second rotating electrode 12, to which the electric power is applied to the load, are shown in Fig. 9, and Fig. 10 is a diagram showing the pulse power generation. The pulse power of the figure generates two magnetic switches S R2 pulse compression circuit composed of a saturable reactor. The capacitor C1, the first magnet C2, and the second magnetic switch SR3 constitute a two-stage neodymium magnetic switch SR1, which is a reduction in exchange loss of the semiconductor off SW such as an IGBT, and is also referred to as a solid-state switch SW as the above-described switching means. The following steps will be based on the structure and operation of the circuit according to Figure 9. First, the charging voltage of the charger CH is adjusted so that the main capacitor C0 is charged by the charger CH. < The solid state switch S W is turned off. When the charging of the main capacitor C0 is completed so that it is turned on, it is applied to both ends of the magnetic switch S R 1 at both ends of the solid-state switch SW. When the time integral 施加 of the main voltage V0 applied to both ends of the magnetic switch SR1 reaches the limit defined by the magnetic switch, the magnetic switch SR1 saturates to turn on the capacitor C0, and the circuit of the magnetic switch SR1 and the step-up transformer body switch S W flows current. Simultaneously, on the secondary side, the circuit of capacitor C1 flows with current 2 container 12b, that is, between.构成The composition of the device. The device has a solid-state magnetic accelerator using a two-stage magnetic switch SR2 of SR3, a capacitive magnetic pulse compression circuit switching element. Also, il is called a means of exchange. The first diagram illustrates the following, at the time of the predetermined 値vi η, >, the solid-state switch SW such as the IGBT is a magnetic switch whose voltage is mainly determined by the characteristics of the charge SR 1 applied to the capacitor C0, and is 1 in the main Tr 1 The secondary side is fixed to the step-up transformer Tr1 so that the charge stored in the main-55-200908815 capacitor C0 is transferred and charged in the capacitor C1. Then, when the time integral 电压 of the voltage V 1 of the capacitor C 1 reaches a limit 决定 determined by the characteristics of the magnetic switch SR2, the magnetic switch SR2 saturates to turn on the magnetic switch, while in the capacitor C 1, the magnetic switch SR2, the capacitor C2 The loop flows current, travels to the charge stored in capacitor C1, and is charged to capacitor C2. Then, when the time integral 电压 of the voltage V2 of the capacitor C2 reaches the critical threshold determined by the polarity of the magnetic switch SR3, the magnetic switch SR3 is saturated to turn on the magnetic switch, and the high voltage pulse is applied to the first container and the second container. That is, between the second rotating electrode and the second rotating electrode. Here, the pulse width of the current pulse of each stage in which the magnetic switches SR2, SR3 and the capacitors ci, C2 are formed by the magnetic switches SR2, SR3 and the capacitors ci, C2 are set to be narrower as the downstream portion becomes smaller. The pulse compression operation 'is a short pulse strong discharge between the first rotating electrode and the second rotating electrode, and the input energy to the plasma is also increased. (4) Raw material supply and raw material vaporization mechanism The high-temperature plasma raw material 2 1 for emitting extreme ultraviolet light is supplied from the raw material supply unit 20 provided in the chamber 1 in a liquid or solid state, and is supplied to the discharge field (for the first The space between the edge portion of the peripheral edge portion of the rotating electrode n and the edge portion of the peripheral edge portion of the second rotating electrode 12 is adjacent to the space where the discharge occurs. Specifically, the high-temperature plasma raw material 21 is a space other than the discharge field, and is supplied to the gasified high-temperature plasma raw material to supply a space which can reach the discharge field. -56 - 200908815 The raw material supply unit 20 is provided, for example, on the upper wall of the chamber 1, and the high-temperature plasma raw material 21 is supplied in a droplet form (dropped) in the vicinity of the discharge area. The high-temperature plasma raw material supplied in the form of droplets is dropped, and reaches the space near the discharge area, and the first laser beam emitted from the second laser source 23a (laser for raw material) The beam 23 is irradiated to vaporize it as the first laser source 2 3 a that emits the first laser beam 23, for example, a carbon dioxide laser source, a YAG laser, a YV04 laser, a YLF laser, or the like can be used. Excimer laser sources such as solid laser sources, ArF lasers, KrF lasers, and XeCl lasers. Further, in the present embodiment, the laser beam is irradiated as an energy beam irradiated to the high-temperature plasma raw material 21, but instead of the laser beam, the ion beam and the electron beam are irradiated to the high-temperature plasma material. Also. As described above, the high-temperature plasma raw material vaporized by the irradiation of the first laser beam 23 is spread around the normal direction of the surface of the high-temperature plasma raw material on which the first laser beam 23 is incident. Therefore, the first laser beam 2 3 is a method in which the high-temperature plasma raw material after gasification expands in the direction of the discharge region, and it is necessary to irradiate the side of the discharge region facing the surface of the high-temperature plasma raw material. 1 The irradiation of the laser beam 2 3 is supplied to the vaporized high-temperature plasma raw material in the discharge field, and does not contribute to a part of the high-temperature plasma formation person due to the discharge, or the decomposition result of the plasma formation is generated. A part of the wire harness of the atomic gas is used as a chip to be in contact with the low temperature inside the EUV light source and is stacked. Therefore, it is preferable that the high-temperature plasma raw material after the vaporization does not spread in the direction of the EUV condenser, and the first laser beam 23 is irradiated to the high-temperature plasma material 2 1 . Specifically, the high-temperature electric paddle material 21 is supplied to a space between the pair of electrodes 111, 1 and the EUV condensing mirror 2, and in addition to the space outside the discharge field, the vaporized high-temperature plasma raw material can reach the discharge. The material supply unit 20 is adjusted in the manner of the space of the field. Further, the first laser beam 23 is irradiated to the side of the high-temperature plasma raw material facing the discharge region with respect to the raw material of the space supplied, and the vaporized high-temperature plasma raw material is expanded toward the discharge region. In this way, the first laser source 2 3 is adjusted. By the adjustment as described above, it is possible to suppress the occurrence of debris toward the EUV condensing mirror 2. As described above, the high-temperature plasma material vaporized by the irradiation of the first laser beam 23 is spread around the normal direction of the surface of the high-temperature plasma material incident on the first laser beam 23. Specifically, the density of the high-temperature plasma raw material that is vaporized by the irradiation of the first laser beam 23 is such that the normal direction becomes the highest density, and the density is lowered every time the angle is increased from the normal direction. According to the above, the irradiation conditions of the high-temperature plasma raw material 21 for the supply position in the discharge region and the irradiation energy of the first laser beam 23 are the spatial density of the vaporized high-temperature plasma raw material supplied to the discharge region. The distribution is a mode in which the condition of efficiently extracting EUV radiation after the high-temperature plasma material is heated and excited in the discharge field, and is appropriately set. -58- 200908815 Further, below the space where the high-temperature plasma raw material is supplied, a raw material recovery means 25 for recovering the unvaporized high-temperature plasma raw material is provided. (5) The EUV light emitted from the EUV light concentrating portion is collected by the oblique-incident EUV condensing mirror 2 provided in the eUV concentrating portion, and is collected by the EUV light extracting portion 7 provided in the cavity 1. It is introduced into an illumination optical system of an exposure apparatus (not shown). In general, the oblique incident type EUV condensing mirror 2 has a structure in which a plurality of thin concave mirrors are arranged in a nested manner with high precision. The shape of the reflecting surface of each concave mirror is, for example, a rotating elliptical surface shape, a rotating paraboloid shape, a Walter shape, and each concave mirror is a rotating body shape. Here, the Walter shape refers to a light incident surface which is a concave shape in which a hyperboloid and a rotating elliptical surface are sequentially rotated by a light incident side, or a hyperboloid and a paraboloid of revolution are formed. The base material of each of the above concave mirrors is, for example, nickel (Ni) or the like. The EUV light having a very short wavelength is reflected, so that the reflecting surface of the concave mirror is formed as a very good plane. The reflective material to which the smooth surface is applied is, for example, a metal film such as ruthenium (Ru), molybdenum (Mo), or rhodium (Rh). Such a metal film is densely coated on the reflecting surface of each concave mirror. With such a configuration, the EUV condensing mirror is an EUV light that satisfactorily reflects an oblique incident angle of 0 to 25, and is capable of collecting light. (6) The debris collector is provided between the discharge portion and the EUV light concentrating portion described above. In order to prevent damage of the -59-200908815 EUV condensing mirror, the first and second rotating electrodes 1 1,1 which are caught after being caught and discharged are provided. The crumb collector for the EUV light such as Sn or Li which is generated by the metal dust generated by the splashing or the EUV radiation seed in the peripheral portion of the second portion. As described above, in the Fig. 9, in the EUV light source device of the example, the debris collector is constituted by the gas collector 3. The gas mist 13b is constituted by a gas supplied from the gas supply unit 13 into the chamber 1. The aerosol mechanism is shown in Fig. 9. The nozzle 13 3 a is a gas-shaped opening that is elongated and has a square shape. When the unit 13 is supplied to the nozzle 13 3 a, the sheet-like gas is discharged from, and the gas mist 13b is formed. The gas mist 13b is a direction in which the gas is suppressed from reaching the E U V condensing mirror to the gas 13b, and is excellent for EUV light, and for example, rare particles such as helium (He) or argon (Ar) are used. Further, in the gas mist 13b and the collector 3 of the EUV condensing mirror 2. For the wheel type collector 3, for example, it is referred to as a "metal collector". The wheel type collector 3 is a type of EUV light that is not radiated, and a high temperature plasma is provided between the gas mist 13b and the EUV condensing mirror 2 by a plurality of plates provided in the high temperature direction and an annular support supporting the plate. By the high-temperature electric material, the high-temperature electric material, the scraps, and the like, only the present embodiment _ 1 3 b and the wheel type shown in Fig. 7 are in the shape of a rectangular parallelepiped, and the gas is discharged from the gas supply nozzle 1 The opening of 3a changes the above-mentioned debris [2]. Here, a gas having a high rate of incidence is used, and a wheel type is provided between the gas and the hydrogen (H2). The document 8 is described as covering a radial body in the field of high-temperature plasma slurry generation. This type of wheel collection -60-200908815 3 increases the pressure between the high temperature plasma and the wheeled collector 3. As the pressure increases, the gas density of the aerosol present in this condition increases, which increases the collision of gas atoms with debris. Debris is a reduction in exercise energy by repeated collisions. Therefore, the energy at which the debris collides with the EUV condensing mirror 2 is reduced, and the damage of the EUV condensing mirror 2 can be reduced. Further, the gas supply unit 14 is connected to the condensing space 1 b side of the chamber 1 to introduce a buffer gas which is not related to the light emission of the EUV light. The buffer gas supplied from the gas supply unit 14 is passed from the EUV condensing mirror 2 side through the wheel type collector 3, and then passes through the space between the wheel type collector holding partition wall 3a and the partition wall 1c. It is discharged from the vacuum exhaust unit 4. By generating the flow of such a gas, the debris which is not caught by the wheel type collector 3 is prevented from being directed toward the EUV condensing mirror 2 side, and the damage of the EUV condensing mirror 2 due to the debris can be reduced. Here, in addition to the buffer gas, a halogen gas or a hydrogen group such as chlorine gas (Cl2) may be supplied from the gas supply unit 14 to the condensing space. These gases are not removed by the debris collector and react with the debris accumulated in the EUV condenser 2 to function as a cleaning gas for removing the debris. Therefore, the function of suppressing the decrease in the reflectance of the EUV condensing mirror due to the accumulation of debris is suppressed. (7) The pressure in the discharge space 1 a of the partition wall is set to be a good discharge for heating and exciting the high-temperature plasma raw material that is vaporized by the laser beam, and must be kept below a certain level. The vacuum atmosphere. -61 - 200908815 On the one hand, the concentrating space 1 b is required to reduce the kinetic energy of the debris with a debris collector, so the pressure must be maintained at the debris collector portion. In Fig. 9 and Fig. 10, the gas is supplied by the gas mist, and the predetermined pressure is maintained by the debris collector 3 to reduce the kinetic energy of the debris. For this reason, the condensed space is a reduced-pressure atmosphere which must be maintained at a pressure of about 10,000 Pa as a result. Here, in the EUV light source device of the present invention, a partition wall 1c that partitions the inside of the chamber 1 into a discharge space and a condensing space is provided, and the partition wall 1c is provided with an opening that spatially connects the two spaces. . The opening functions as a pressure resistance, so that the discharge space is discharged by the vacuum exhaust device 4, and when the vacuum venting device 5 discharges the condensing space, the flow rate of the gas from the gas mist 13b is appropriately considered, and the opening is The size, the exhaust capability of each vacuum exhaust device, etc., maintains the discharge space 1 a at several Pa, and maintains the condensing space 1 b at an appropriate pressure. (8) Raw material monitor The raw material monitor 20a monitors the position of the raw material dropped by the above-described raw material supply unit 20 in the form of droplets. For example, as shown in Fig. 9, the timing at which the raw material dropped from the raw material supply unit 20 reaches the position P1 near the raw material monitor 20a is monitored. As a result of the above monitoring, the time from the arrival of the raw material to the position P1 to the position P2 irradiated by the first laser beam (raw laser beam) 23 is obtained. The monitoring loop is, for example, using a well-known laser metrology method. The raw material detection signal is sent from the raw material supply - 62 - 200908815 to the control unit 26 at the monitor 2〇a. As described above, the raw material 2i is dropped in the form of a droplet, and thus the raw material detection signal is a pulse signal which becomes intermittent. (9) Operation of the extreme ultraviolet (EUV) light source device The EUV light source of the present embodiment is used as the light source for exposure, for example, as follows. Fig. 13 and Fig. 14 are flowcharts showing the operation of the present embodiment. Fig. 15 is a flowchart, and the operation of this embodiment will be described below with reference to Figs. The control unit 26 of the E U V light source device stores the time data Atd, Ati, and Atg shown in the second and second figures. That is, 'Atd is the timing (time Td) from the trigger signal input to the switching means of the pulse power supply means (pulse power generator 8), and the switching means takes the on state and the time between the electrodes reaches the critical time 値Vp. Ati is the time until the current flowing between the electrodes reaches the critical threshold 値Ip after the discharge is started. Atg is a time from when the first laser beam is irradiated to the raw material until the spatial density distribution reaches at least a part of the predetermined vaporized raw material reaches the discharge region. In general, when the voltage V applied to the discharge electrodes 111, 12 is large, the rise in the voltage waveform between the discharge electrodes is increased. Therefore, the above A t d is dependent on the voltage V applied to the discharge electrodes 11 , 1 2 . The control unit 26 of the E U V light source device is a table in which a voltage V obtained in advance by an experiment or the like and a time Atd are stored as a table. Further, the control unit 26 of the EUV light source device memorizes the timing from the arrival of the raw material to the position of -63-200908815 (for example, P1 of Fig. 12), until the ray laser beam is reached (the laser beam for the raw material) The time atm 23 is irradiated to the position of the raw material 2丨 (for example, P2 in Fig. 2). Further, the control unit 26 is a timing for memorizing the correction times α and β and the switching means for outputting from the main trigger signal to the pulse power supply means, until the main trigger signal is input to the switching means of the pulse power supply means, so that the switching means becomes The delay time d 1 until the timing of the conduction. The correction time α θ β is as follows. First, the candidate command from the control unit of the EUV light source device is sent to the vacuum exhaust device 5, the vacuum exhaust device 4, the gas supply unit 13, the gas supply unit 14, the first motor 22a, and the second motor 22b ( Step S101 of the thirteenth, and S201 of Fig. 15). The vacuum exhaust device 5, the vacuum exhaust device 4, the gas supply unit 13 and the gas supply unit 14 that receive the command are started. That is, the vacuum evacuation device 4 operates, and the discharge space becomes a vacuum atmosphere. On the other hand, the vacuum exhausting device 5 operates while the gas supply unit 13 operates to form the gas mist 13b, and the gas supply unit 14 operates to supply the buffer gas and the cleaning gas into the collecting space 1b. As a result, the concentrating space lb reaches the predetermined pressure. Further, the first electric motor 22a and the second electric motor 22b operate to rotate the first rotating electrode 1 1 and the second rotating electrode 1 2 . Hereinafter, the above-described operation states are collectively referred to as a standby state (step S102 in Fig. 13 and S202 in Fig. 15). The control unit 26 of the EUV light source device transmits the operation start command signal to the material supply unit 20 and the material monitoring-64-200908815 20a after the waiting state (the steps S103 and 15 of Fig. 13). S203). The raw material supply unit 20 that receives the operation start command signal starts to drip the liquid or solid high-temperature plasma raw material (for example, liquid tin) used for EUV radiation in a droplet form. On the other hand, the material monitor 20a that receives the motion start command signal starts the monitoring operation, and when the material arrives at the position P1 described below, the material detection signal is transmitted to the control unit of the EUV light source device. Step S1 0 4 of FIG. 3 and S 2 0 4 of FIG. 5) At this timing, the dropped material 21 is not subjected to the first laser beam (raw material laser beam) 2 3 After the irradiation, it is directly recovered by the raw material recovery means 25. The control unit 26 of the EUV light source device transmits the candidate completion signal to the control unit 27 of the exposure device (step S105 of Fig. 13 and S 2 0 5 of Fig. 15). The control unit 27 of the exposure device that receives the signal for completion of the signal and the control unit 26 of the EUV light source device are received light-emitting commands. Further, when the exposure apparatus side controls the intensity of the EUV radiation, the intensity data of the EUV radiation is also included in the light emission command (step S of the Fig. 3 〇6, S206 of Fig. 5). The control unit 26 of the E U V light source device is a charger CH that transmits a charge control signal to the pulse power generator 8. The charge control signal is composed of, for example, a discharge start timing data signal. As described above, when the intensity data of the E U V radiation is included in the light-emitting command from the control unit 27 of the exposure device, the charging voltage data signal for the main capacitor C0 is also included in the above -65-200908815 charging control signal. For example, the relationship between the EUV radiation intensity and the charging voltage of the main capacitor C 0 is obtained by experiments or the like in advance, and the control unit 26 for storing the two tables of the EUV light source device is stored, and the table is stored. The intensity data of the EUV radiation of the light-emitting command received by the control unit 27 of the exposure apparatus is called the charging voltage data of the main capacitor C0 from the table. Further, based on the charged charging voltage data, the control unit 26' of the EUV light source device transmits a charging control signal including a charging voltage data signal to the main capacitor C0 to the charger CH of the pulse power generator (No. 1 3) Step S107 of the figure and S207) of Fig. 15). The charger CH performs charging of the main capacitor C0 as described above (step S1 0 8 of Fig. 3). The control unit 26 of the EUV light source device determines whether or not the first EUV light is generated (referred to as a first pulse) after the start of the operation (step S109 of Fig. 3), and at the time of the first pulse, the process proceeds from step S109 to step S. 1 1 0. If it is not the first pulse, then it moves to step S1 16 . In step S1 1 0, the control unit 26 of the EUV light source device calculates the timing of outputting the main trigger signal to the pulse power supply means, and controls the operation of the first laser source 23a with respect to the first laser control unit. When the first trigger signal of 23b is sent, the timing of the second trigger source 24a is controlled to the second trigger signal of the second laser control unit 24b. In the first pulse, the following voltage counters and current counter counts cannot be used, and the following feedback corrections cannot be corrected. Therefore, based on the time data previously stored, ^td, Δίί, Atg, Atm, dl, α , β -66 - 200908815 to determine the above timing. Further, as shown in FIGS. 1 and 2, in actuality, the main trigger signal is input to the switching means of the pulse power supply means (pulse power generator 8), and the timing Td at which the switching means is turned on is used as a reference. It is preferable to set the times τι and T2 to which the first laser beam 23 and the second laser beam 24 are irradiated. In the present embodiment, the timing of outputting the main trigger signal from the switching means of the pulse power supply means is determined in advance, and the timing of the switching means being turned on until the main trigger signal is input to the switching means of the pulse power supply means The delay time d 1 of T d . Thereafter, the timing Td' at which the main trigger signal is output to the switching means of the pulse power supply means is corrected by the delay time d1, and the timing Td at which the switching means is turned on is obtained. On the other hand, the timing T21 from the second trigger signal is sent from the timing T 1 ' sent by the first trigger signal to the delay time d2 until the first laser beam (the laser beam for raw material) 23 is irradiated. - the delay time d3 until the second laser beam (starting laser beam) 24 is irradiated is negligibly small compared to the ns order, and thus the first laser source is not considered here. 23a and the second laser source 24a are, for example, a Q-switched YAG laser device. Sending of the first trigger signal to the first laser control unit 2 3 b for controlling the operation of the first laser source 2 3 a with the timing Td' of the switching means for outputting the main trigger signal to the pulse power supply means as a reference At the timing 21, the timing T21 of the second trigger signal for the second laser control unit 24b that controls the operation of the second laser source 24a is performed by -67-200908815, and the main trigger signal can be input. The timings T1 and T2 at which the first laser beam 2 3 and the second laser beam 24 are irradiated are used as the reference timing Td of the switching means of the pulse power supply means. When the timing of transmitting the main trigger signal is used as a reference (time Td'), the timing of sending the first trigger signal to the first laser control unit 23b is Τ, and the second operation for controlling the second laser source 24a. The timing T2' of the second trigger signal of the laser control unit 24b is obtained as follows. As can be seen from Fig. 1 and Fig. 2, the timing T2 at which the second laser beam 24 is irradiated is based on the timing T d when the switching means of the pulse power supply means is turned on, and becomes T2 2 Td + At ... (1) . Therefore, the timing T2' of the second trigger signal of the second laser control unit for controlling the operation of the second laser source when the timing Td' of the main trigger signal is transmitted is T2' + d3 ^ (Td' + d 1 ) +Atd .--(2) Here, the delay time d3 is negligibly small, so the timing T2 of the second trigger signal is T2 ^ Td' + dl+ Atd (3) Here, when the voltage between the electrodes surely exceeds the critical 値Vp, the timing at which the second laser beam is irradiated is slightly delayed from Atd, so that the second laser beam is not irradiated. also may. The delay time α is defined as the correction time, and when the equation (3) is deformed, it becomes T2, g Td' + d 1 + Atd + a ... (4). In the present embodiment, it is made to be -68-200908815 T2' = Td' + d 1 + Atd + a · (5). Further, of course, the setting of T2' is not limited to the formula (5). It is also possible to satisfy the formula (4). For example, T2' = Td' + dl + Atd may be produced by the timing T1 of the first laser beam 23 and the second laser beam 24 by the first and second figures. The timing T2 is the following relationship. T2 + Ati^ Tl+Atg^ Τ2 + Δίΐ + Δίρ (6) In the present embodiment, the first laser beam 23 is irradiated at a timing when the discharge current surely exceeds the critical 値Ip, and the first The timing at which the laser beam 23 is irradiated is slightly delayed from Ati, and the delay time is defined as the correction time β. When the relationship between the timings T1 and T2 is set, Τ2 + Δΐί + β = Τ1 + Atg (7). Here, the correction time β is 0 ^ β ^ Δίρ (8). Of course, the setting of the relationship between the timings τ 1 and Τ 2 is not limited to the equation (7), and the equation (6) is satisfied. Yes, for example, Τ2 + ΔΗ = Τ1 + Atg, or 'T2 + Ati + Atp = Tl+Atg. The relationship between the timing of the transmission of the (7) type to the first trigger signal and the signal of the second trigger signal is (T2' + d3) + Ati + p = (Tr + d2) + Atg ·· (9 ). Here, the delay times d2 and d3 are negligibly small' (thus (9) or become Τ2' + Δίΐ + β = Τ 1 ' + Atg -69- 200908815 Τ 1 ' = T2' + Ati + P -Atg ".(10) . When (10) is substituted into (5), it becomes
Tl,= (Td,+ dl+Atd + a) + Ati + P-Atg = Td’ + d 1+(Atd + Ati-Atg) + (a + p) ·._ (11)。 如上述地,以送訊主觸發訊號的時機Td'作爲基準時 的第1觸發訊號的送出時機ΤΓ、第2觸發訊號的送出時 機T2'是分別以(1 1 )式、(5 )式所表示。 在此,本實施例的EUV光源裝置’是將原料作成液 滴狀藉由滴下所供應。因此,所滴下的原料到達至第12 圖的第1雷射射束的照射位置P2的時機,與送訊上述的 主觸發訊號的時機Td’、第1觸發訊號的送出時機T1 ’、第 2觸發訊號的送出時機T2'是必須同步。 將第1 2圖的原料到達至位置P1的時機作爲Tm,而 在從Tm經Atm後,原料到達至照射位置P2時,則原料 到達至照射位置P 2的時機,是成爲T m + △ t m。 亦即,以時機Tm作爲基準時,必須成立Tl,= (Td, + dl+Atd + a) + Ati + P-Atg = Td' + d 1+(Atd + Ati-Atg) + (a + p) ·._ (11). As described above, the timing of transmitting the first trigger signal and the timing of sending the second trigger signal T2' when the timing Td' of the main trigger signal is transmitted is (1 1 ) and (5), respectively. Said. Here, the EUV light source device 'of the present embodiment is supplied by dropping the raw material into a droplet form by dropping. Therefore, the timing at which the dropped material reaches the irradiation position P2 of the first laser beam of FIG. 12, the timing Td' of transmitting the main trigger signal, the timing T1 of the first trigger signal, and the second timing The timing T2 of the trigger signal is required to be synchronized. The timing at which the raw material of Fig. 2 reaches the position P1 is taken as Tm, and when the raw material reaches the irradiation position P2 after passing through Atm from Tm, the timing at which the raw material reaches the irradiation position P 2 becomes T m + Δ tm . That is, when the timing Tm is used as a reference, it must be established.
Tl=Tm + Atm …(12)。 若將(12)式,變形成第1觸發訊號的送出時機ΤΓ 的式時,則成爲 (Tl' + d2) = Tm + Atm ...(13) 在此,延遲時間d2是可忽略地較小之故,因而(13 )式是成爲Tl = Tm + Atm (12). If the formula (12) is changed to the expression of the timing of the first trigger signal, it becomes (Tl' + d2) = Tm + Atm (13) Here, the delay time d2 is negligible. Small reason, thus (13) is to become
Tl' = Tm + Atm ”.(14)。 因此,若以時機Tm作爲基準時,則送訊主觸發訊號 -70- 200908815 的時機Td',對於第1雷射控制部的第1觸發訊號的送出 時機τ 11,對於控制第2雷射源的動作的第2雷射控制部 的第2觸發訊號的送出時機T2'是如下地被求出。 T d ' = Tm + ( Δ t m - Δ t d - Δ t i + Δ t g) - d 1 - (α + β ) .--(15)Tl' = Tm + Atm ". (14). Therefore, if the timing Tm is used as the reference, the timing Td' of the main trigger signal -70-200908815 is transmitted, and the first trigger signal of the first laser control unit is used. The delivery timing τ11 is obtained by the second trigger signal transmission timing T2' of the second laser control unit that controls the operation of the second laser source. T d ' = Tm + ( Δ tm - Δ td - Δ ti + Δ tg) - d 1 - (α + β ) .--(15)
Tl’ = Tm + Atm ".(14) T2 ' = Tm + (Δ tm +Atg-Δti) - β ·_.(16) 在此,Δίιη是由第12圖,如下地被求出。 如第1 2圖所示地,將原料供應單元2 0的原料排出部 的位置作爲Ρ0,將原料監測器20a監測原料的位置作爲 P1,將第1雷射射束2 3的照射位置作爲P 2,將p 〇與p i 的距離作爲L,而將P0與P2的距離作爲Lp。 又,將原料21位於P0的時間作爲原點,如上述地, 將原料21到達至P1的時機作爲Tm,而將原料21到達至 照射位置P2的時機作爲Tm + Atm。將在位置p〇的原料的 落下速度作爲〇,而將重力加速度作爲G,則成爲 L = ( 1 /2)GTm2 ...(17)Tl' = Tm + Atm " (14) T2 ' = Tm + (Δtm + Atg - Δti) - β · (16) Here, Δίιη is obtained from Fig. 12 and is obtained as follows. As shown in Fig. 2, the position of the raw material discharge unit of the raw material supply unit 20 is taken as Ρ0, the position at which the raw material monitor 20a monitors the raw material is taken as P1, and the irradiation position of the first laser beam 2 3 is taken as P. 2. The distance between p 〇 and pi is taken as L, and the distance between P0 and P2 is taken as Lp. Further, the time at which the raw material 21 is located at P0 is taken as the origin, and as described above, the timing at which the raw material 21 reaches P1 is taken as Tm, and the timing at which the raw material 21 reaches the irradiation position P2 is taken as Tm + Atm. When the falling speed of the raw material at the position p〇 is taken as 〇 and the acceleration of gravity is taken as G, it becomes L = (1 /2) GTm2 (17)
Lp = (l/2)G(Tm + Atm)2 ··· (18) 。由(18) 、 (19)式’Atm是如(19)式地被求出 〇Lp = (l/2)G(Tm + Atm)2 ··· (18) . From (18) and (19) where 'Atm is obtained as in (19) 〇
Atm = (2Lp/G)1/2-(2L/G)1/2 …(19) 亦即,在第13圖的步驟S110中,EUV光源裝置的控 制部26,是依據事先所記憶的時間資料Atd、Ati、Mg、 △ tm、dl、a、0,利用式(15) (14) (16) (19),求 出以送訊時機Tm作爲基準時的主觸發訊號的時機Td1, -71 - 200908815 對於第1雷射控制部23b的第1觸發訊號的送出時機ΤΙ * ,對於控制第2雷射源24a的動作的第2雷射控制部24b 的第2觸發訊號的送出時機T2’(第15圖的S208 )。 在此,時間資料Atci,是由儲存電壓V與時間Atd之 對應的表格被叫出。施加於放電電極的電壓V的資料,是 例如直接使用在步驟s 1 07中將充電控制訊號送訊至脈衝 電力發生器的充電器CH之際,由儲存EUV放射強度與對 於主電容器C0的充電電壓之相關的表格所叫出的主電容 器C0的充電電壓資料。 EUV光源裝置的控制部26,是經過主電容器C0的充 電成爲穩定爲止的時間的充電器充電穩定時間tst的時機 之後,將最初檢測出來自原料監測器20a的原料檢測訊號 的時機作爲基準時機Tm (第1 3圖的步驟S 1 1 1、第1 5圖 的S204、S207)。又,基準時機Tm的設定,是並不被限 定於經過充電器充電穩定時間tst的時機之後,最初檢測 出原料檢測訊號的時機。例如,經過時間tst的時機之後 ,將檢測出所定次數原料檢測訊號的時機設定爲基準時機 Tm也可以。 EUV光源裝置的控制部26,是將在步驟S 1 1所設定 的基準時機Tm作爲基準,利用式(15) (14) (16)( 1 9 )求出的送訊以時機Tm作爲基準時的主觸發訊號的時 機Td1,對於第1雷射控制部23b的第1觸發訊號的送出 時機Τ Γ,對於控制第2雷射源24a的動作的第2雷射控 制部24b的第2觸發訊號的送出時機T2^將主觸發訊號 -72- 200908815 、第1觸發訊號、第2觸發訊號,分別送訊至脈衝電力供 應手段(脈衝電力發生器8)的交換手段、第1雷射控制 部23b、第2雷射控制部24b (第13圖的步驟S 1 1 2、第 15 圖的 S209 、S213、S217)。 EUV光源裝置的控制部26是將計測在主觸發訊號的 輸出開始使得電極間電壓一直到達至臨界値Vp爲止的電 壓計數器(未圖示)予以動作。又將計測在第2觸發訊號 的輸出開始使得放電電流一直到達至臨界値Ip爲止的電 流計數器(未圖示)予以動作(第1 4圖的步驟S 1 1 3、第 15 圖的 S212、S216)。 又’電壓計數器與電流計數器,是從曝光機的控制部 27輸入有發光指令訊號時,則被零清除。電壓計數器是輸 出主觸發訊號之後,爲了使得電極間電壓一直到達至臨界 値V p爲止的時間作成一定而予以反饋控制所用者。—方 面’電流計數器是輸出第2觸發訊號之後,爲了使得放電 電流一直到達至臨界値Ip爲止的時間作成一定而予以反 饋控制所用者。 亦即,送訊以時機T m作爲基準時的主觸發訊號的時 機Td' ’對於第1雷射控制部的第1觸發訊號的送出時機 Τ Γ ’對於控制第2雷射源的動作的第2雷射控制部的第2 觸發訊號的送出時機T2',是最初第一次(初次脈衝)是 如上述地,依據式(1 5 ) ( 1 4 ) ( 1 6 ) ( 1 9 )所決定,惟 第2次以後是如下述地,依據上述電壓計數器,電流計數 器的計數値依據上述式(1 5 ) ( 1 4 ) ( 1 6 ) ( 1 9 )修正的 -73- 200908815 値所決定。 EUV光源裝置的控制部26是藉由未圖示於第9 7的電壓監測器檢測出電極間電壓到達至臨界値v p 機’俾停止電壓計數器。又,藉由未圖示的電流監測器 測出放電電流到達至臨界値Ip的時機,俾停止電流計 器(第14圖的步驟S114、第15圖的S212、S216)。 在第13圖的步驟S 1 1 2中,依據(1 5 )式,以時 Td’送出主觸發訊號’該主觸發訊號被輸入至脈衝電力 應手段的交換手段之後,經過延遲時間d 1,則使交換手 (例如IGBT)成爲導通(第15圖的S209、S210)。 當交換手段成爲導通,則第1旋轉電極11、第2旋 電極1 2間的電壓會上昇,而在時間^td之後,電極間 壓到達至臨界値Vp。如上述地,該臨界値Vp,是放電 生時所流動的放電電流値成爲臨界値Ip以上時的電壓 (第 15 圖 S210、S211 )。 如上述地,在步驟S112中,以依據(16)式的時 T2' ’使得第2觸發訊號被送出至第2雷射控制部24b。 果’在電極間電壓到達至臨界値Vp的時機(Td + Atd ) 後的時機T2 ’使得第2雷射射束(起動用雷射射束) 被照射在放電領域(第15圖的S213,S214)。 第2雷射射束24被照射在放電領域,而在放電領 開始放電。開始放電之後,在Ati之後,放電電流的大 到達至上述的臨界値Ip (第15圖的S214、S215)。該 界値Ip是爲了要得所定強度的EUV放射所必需的放電 中 時 檢 數 機 供 段 轉 電 發 値 機 結 以 2 4 域 小 臨 電 -74- 200908815 流値的下限。又,將放電電流値爲臨界値Ip以上的期間 作爲Atp 。 又,如上述地,在步驟S1 12中,依據(14 )式的時 機T1 ',使得第1觸發訊號被送出到第1雷射控制部2 3 b 。結果,(T2 + Ati-Atg )〜(T2 + Ati + Atp-Atg )期間中的時 機T1,第1雷射射束(原料用雷射射束)2 3是被照射( 第 1 5 圖的 S215、S217、S2 1 8 )。 亦即’在步驟s 1 1 2 ’ EUV光源裝置的控制部2 6送訊 各觸發訊號之結果,放電通道的位置被劃定在所定位置。 又’在位置被劃定的放電通道中,空間密度分布爲所定分 布的氣化原料的至少一部分到達至放電通道的狀態下,成 爲爲了放電電流的大小得到所定強度的EUV放射所必需 的放電電流的下限以上的方式,發生著放電。 放電是在第1旋轉電極11、第2旋轉電極12的周緣 部的邊緣邰分間發生’形成有電漿。藉由流動電槳的脈衝 狀的大電流,使電漿被加熱激勵而成爲高溫化,則從該高 溫電漿發生波長1 3.5nm的EUV (第14圖的步驟S115、 第1 5圖的S 2 1 9 )。 又,上述的所疋空間密度分布,是被設定成儘可能有 效率地發生EUV放射。具體上,適當地設定成對於放電 領域的高溫電漿原料的供應位置,對高溫電漿原料的第j 雷射射束2 3的照射方向,第丨雷射射束2 3的照射能量等 能設定成如上述的最佳空間密度分布。 又’放電通道的位置是藉由第2雷射射束24的照射 -75- 200908815 被劃定在所定位置之故,因而提昇生成電漿的位置的位置 穩定性。 亦即,EUV光源裝置的控制部26送訊各觸發訊號的 結果,可實現發生有效率的EUV放射,及EUV放射的發 生位置的穩定化。 從電漿所放射的EUV放射是藉由通過設於隔間壁1 c 的開口,輪型收集器3而藉由配置於聚光空間1 b的斜入 射型的EUV聚光鏡2被聚光,由設定腔1的EUV光取出 部7,被導入到省略圖示的曝光裝置的照射光學系。 如以上地當完成初次的EUV放射,則回到第1 3圖的 步驟S106,而待機來自曝光裝置的發光指令。 受訊發光指令之後,經上述的步驟S 1 07、S 1 08,而 移行至步驟S 1 09。下一次的EUV放射並不定初次的脈衝 之故,因由步驟S109移行至步驟S116。在步驟S116中 。EUV光源裝置的控制部26是依據在步驟S 1 1 4中所計測 的主觸發訊號的開始輸出後電極間電壓一直到達至臨界値 Vp爲止的時間的電壓計數器的數値,及第2觸發訊號的 開始輸出後放電電流一直到達至臨界値Ip爲止的時間的 電流計數器的數値,藉由以下式進行對於第1雷射控制部 23b的第1觸發訊號的送出時機T1 1,對於控制第2雷射 源24a的動作的第2雷射控制部24b的第2觸發訊號的送 出時機T2'的反饋運算。 tvcal二(dl+Atd)-tvc …(20) tical = Ati-tic …(2 1 ) -76- 200908815 式中,tvcal是主觸發訊號的開始輸出後電極間 一直到達至臨界値Vp爲止的時間的修正値,而tvc 電壓計數器所計測的時間。又,tic al是第2觸發訊號 始輸出後放電電流一直到達至臨界値Ip爲止的時間 正値,而tic是在電流計數器所計測的時間。(第1 3 步驟S116、第15圖的S208)。 又,由(20 )式可知,tvcal是從輸出主觸發訊 時機Td’,使得該主觸發訊號輸入至脈衝電力供應手 交換手段而交換手段成爲導通的時機Td爲止的延遲 d 1,及從交換手段成爲導通的時機Td —直到電極間 到達至臨界値Vp爲止的時間的總和的修正値。 如上述地,脈衝電力供應手段的交換手段的固體 SW,是大都使用著可流動大電流的IGBT等的半導體 元件。此種IGBT等的半導體交換元件是輸入有閘極 (相當於本實施例的主觸發訊號)而實際上成爲導通 間會某程度參差不齊。亦即,(20 )式是也考慮交換 的參差不齊的修正者。 EUV光源裝置的控制部26是考慮在步驟S116所 的修正値,藉由下式來決定送訊以時機Tm作爲基準 主觸發訊號的時機Td1,對於第1雷射控制部23b的 觸發訊號的送出時機T 1 1,對於控制第2雷射源24a 作的第2雷射控制部24b的第2觸發訊號的送出時| (第13圖的步驟S117,第15圖的S208)。Atm = (2Lp/G) 1/2 - (2L / G) 1/2 (19) That is, in step S110 of Fig. 13, the control unit 26 of the EUV light source device is based on the time memorized in advance. The data Atd, Ati, Mg, Δtm, dl, a, 0, and the timing Td1 of the main trigger signal when the transmission timing Tm is used as a reference is obtained by the equations (15), (14), (16) and (19), 71 - 200908815 The timing ΤΙ* of the first trigger signal of the first laser control unit 23b, and the timing T2' of the second trigger signal of the second laser control unit 24b that controls the operation of the second laser source 24a. (S208 of Fig. 15). Here, the time data Atci is called by a table corresponding to the storage voltage V and the time Atd. The data of the voltage V applied to the discharge electrode is, for example, directly used to store the charge control signal to the charger CH of the pulse power generator in step s 107, by storing the EUV radiation intensity and charging the main capacitor C0. The charging voltage data of the main capacitor C0 called by the voltage related table. The timing of the charger charging stabilization time tst after the charging of the main capacitor C0 is stabilized is the timing of detecting the material detecting signal from the material monitor 20a as the reference timing Tm. (Step S 1 1 1 of Fig. 3, S204, S207 of Fig. 5). Further, the setting of the reference timing Tm is not limited to the timing when the charger charging stabilization time tst is passed, and the timing of detecting the raw material detection signal is first detected. For example, after the timing of the time tst, the timing of detecting the predetermined number of raw material detection signals may be set as the reference timing Tm. The control unit 26 of the EUV light source device uses the reference timing Tm set in step S1 1 as a reference, and the transmission obtained by the equations (15), (14), (16), and (19) is based on the timing Tm. The timing Td1 of the main trigger signal, the timing of the first trigger signal from the first laser control unit 23b, and the second trigger signal of the second laser control unit 24b that controls the operation of the second laser source 24a. The delivery timing T2^ transmits the main trigger signal -72-200908815, the first trigger signal, and the second trigger signal to the switching means of the pulse power supply means (pulse power generator 8), and the first laser control section 23b The second laser control unit 24b (step S1 1 in Fig. 13, 2, S209, S213, and S217 in Fig. 15). The control unit 26 of the EUV light source device operates a voltage counter (not shown) that measures the start of the output of the main trigger signal so that the voltage between the electrodes reaches the critical value pVp. Further, a current counter (not shown) that starts the output of the second trigger signal so that the discharge current reaches the critical threshold pIp is measured (step S1 1 3 of Fig. 4, S212, S216 of Fig. 15) ). Further, when the voltage counter and the current counter are input with the light-emission command signal from the control unit 27 of the exposure machine, they are cleared by zero. The voltage counter is used for feedback control after the main trigger signal is output and the time until the voltage between the electrodes reaches the critical value 値V p is made constant. The "surface" current counter is used for feedback control after the second trigger signal is output, in order to make the discharge current reach the critical time 値Ip. That is, the timing Td' of the main trigger signal when the timing Tm is used as the reference is the timing of the first trigger signal of the first laser control unit Τ 对于 'the operation for controlling the second laser source (2) The second trigger signal transmission timing T2' of the laser control unit is the first time (the first pulse) is as described above, and is determined according to the equation (1 5 ) (1 4 ) (1 6 ) (1 9 ) However, the second and subsequent times are as follows. According to the above voltage counter, the count of the current counter is determined according to the -73-200908815 修正 corrected by the above formula (1 5 ) (1 4 ) (16) (19). The control unit 26 of the EUV light source device detects that the voltage between the electrodes reaches the critical threshold by the voltage monitor (not shown), and stops the voltage counter. Further, when the discharge current reaches the threshold 値Ip by the current monitor (not shown), the current meter is stopped (step S114 in Fig. 14 and S212 and S216 in Fig. 15). In step S 1 1 2 of FIG. 13 , after the main trigger signal is sent according to the formula (1 5 ), the main trigger signal is input to the switching means of the pulse power means, and the delay time d 1 is passed. Then, the exchange hand (for example, IGBT) is turned on (S209, S210 in Fig. 15). When the switching means is turned on, the voltage between the first rotating electrode 11 and the second rotating electrode 1 2 rises, and after the time ^td, the interelectrode pressure reaches the critical 値Vp. As described above, the critical enthalpy Vp is a voltage at which the discharge current 値 flowing during discharge becomes a critical value 値Ip or more (Fig. S210, S211). As described above, in step S112, the second trigger signal is sent to the second laser control unit 24b at time T2'' according to the equation (16). The timing T2' after the timing at which the voltage between the electrodes reaches the critical 値Vp (Td + Atd ) causes the second laser beam (the starting laser beam) to be irradiated in the discharge region (S213 in Fig. 15 S214). The second laser beam 24 is irradiated in the discharge field, and discharge starts at the discharge collar. After the discharge is started, after the Ati, the discharge current reaches a large value to the above-mentioned critical 値Ip (S214, S215 of Fig. 15). The boundary Ip is used to obtain the required intensity of the EUV emission. The detector is used to convert the transmitter to the lower limit of the current flow of the -4 - 200908815 flow. Further, a period in which the discharge current 値 is equal to or greater than the critical 値Ip is taken as Atp. Further, as described above, in step S112, the first trigger signal is sent to the first laser control unit 2 3 b in accordance with the timing T1 ' of the equation (14). As a result, at the timing T1 in the period of (T2 + Ati-Atg ) to (T2 + Ati + Atp-Atg ), the first laser beam (the laser beam for the raw material) 2 3 is irradiated (the image of Fig. 15) S215, S217, S2 1 8 ). That is, as a result of the transmission of each of the trigger signals by the control unit 26 of the EUV light source device in step s 1 1 2 ', the position of the discharge channel is defined at a predetermined position. Further, in the discharge channel in which the position is defined, the spatial density distribution is a discharge current necessary for obtaining EUV radiation of a predetermined intensity for the magnitude of the discharge current in a state where at least a part of the vaporized raw material of a predetermined distribution reaches the discharge channel. The discharge is generated in a manner above the lower limit. In the discharge, plasma is formed at the edge of the peripheral edge portion of the first rotating electrode 11 and the second rotating electrode 12, and plasma is formed. When the plasma is heated and excited by the pulsed large current of the flow electric blade to increase the temperature, EUV having a wavelength of 3.5 nm is generated from the high-temperature plasma (step S115 of Fig. 14 and S of Fig. 15). 2 1 9 ). Further, the above-described spatial density distribution is set to generate EUV radiation as efficiently as possible. Specifically, it is appropriately set to the supply position of the high-temperature plasma raw material in the discharge field, the irradiation direction of the j-th laser beam 2 3 of the high-temperature plasma raw material, and the irradiation energy of the second-order laser beam 2 3 Set to the optimal spatial density distribution as described above. Further, the position of the discharge channel is determined by the irradiation of the second laser beam 24 -75 - 200908815 at a predetermined position, thereby improving the positional stability of the position at which the plasma is generated. In other words, the control unit 26 of the EUV light source device transmits the result of each of the trigger signals, thereby realizing efficient EUV radiation and stabilizing the occurrence position of the EUV radiation. The EUV radiation emitted from the plasma is collected by the oblique-incident EUV condensing mirror 2 disposed in the condensing space 1 b through the opening provided in the partition wall 1 c and the wheel-type collector 3 The EUV light extraction unit 7 of the setting chamber 1 is introduced into an illumination optical system of an exposure apparatus (not shown). When the first EUV radiation is completed as described above, the process returns to step S106 of Fig. 3, and the lighting command from the exposure device is standby. After receiving the illuminating command, the process proceeds to step S1 09 via the above steps S 1 07, S 1 08. The next EUV radiation does not determine the initial pulse, and the process proceeds to step S116 in step S109. In step S116. The control unit 26 of the EUV light source device is a number of voltage counters based on the time until the inter-electrode voltage reaches the threshold 値Vp after the start of the main trigger signal measured in step S1 14, and the second trigger signal. The number of current counters at the time until the discharge current reaches the critical value 値Ip after the start of the output, and the timing T1 of the first trigger signal to the first laser control unit 23b is expressed by the following equation: The feedback calculation of the second trigger signal transmission timing T2' of the second laser control unit 24b that operates the laser source 24a. Tvcal II (dl+Atd)-tvc ...(20) tical = Ati-tic ...(2 1 ) -76- 200908815 where tvcal is the time until the electrode reaches the critical 値Vp after the start of the main trigger signal The correction is 値, while the tvc voltage counter measures the time. Further, tic al is the time until the discharge current reaches the critical 値Ip after the output of the second trigger signal, and tic is the time measured by the current counter. (Step 1 3, S116, and S208 of Fig. 15). Further, as shown in the equation (20), tvcal is a delay d1 from the output of the main trigger timing Td', such that the main trigger signal is input to the pulse power supply hand exchange means, and the switching means becomes the turn-on timing Td. The means becomes the timing of the conduction Td - the correction of the sum of the times until the electrodes reach the critical 値Vp. As described above, the solid-state SW of the means for switching the pulse power supply means is a semiconductor element such as an IGBT which is mostly capable of flowing a large current. A semiconductor switching element such as an IGBT is input with a gate (corresponding to the main trigger signal of the present embodiment), and actually becomes a conduction gap to some extent. That is, the formula (20) is a jagged corrector who also considers exchange. In consideration of the correction in step S116, the control unit 26 of the EUV light source device determines the timing Td1 of the transmission timing Tm as the reference main trigger signal by the following equation, and the transmission of the trigger signal to the first laser control unit 23b. The timing T 1 1 is used to control the transmission of the second trigger signal by the second laser control unit 24b by the second laser source 24a (step S117 in Fig. 13 and S208 in Fig. 15).
Td’ = Tm + (/\tm-Atd-Ati + Atg)-dl - (a + p)-(tvcal + tical)… 電壓 是在 的開 的修 圖的 號的 段的 時間 電壓 開關 交換 訊號 的時 元件 求出 時的 第1 的動 ! 丁2’ (22) -77- 200908815Td' = Tm + (/\tm-Atd-Ati + Atg)-dl - (a + p)-(tvcal + tical)... The voltage is at the time of the opening of the figure of the segment of the voltage switch exchange signal The first movement when the component is found! Ding 2' (22) -77- 200908815
Tl’ = Tm + Atm ··· (14) T2' = Tm + (Atm + Atg-Ati)-p-tical ... (23)Tl' = Tm + Atm ··· (14) T2' = Tm + (Atm + Atg-Ati)-p-tical ... (23)
Atm = (2LP/G)1/2-(2L/G)W2 ---(19) EUV光源裝置的控制部26是經過主電容器CO的充電 成爲穩定爲止的時間的充電器充電穩定時間tst的時機, 之後,以最初檢測出來自原料監測器20a的原料檢測訊號 的時機作爲基準時機Tm (第1 3圖的步驟S 1 1 8,第1 5圖 的 S204 ' S207 )。 又,基準時機Tm的設定是並不被限定於經過充電器 充電穩定時間tst的時機之後,最初檢測出原料檢測訊號 的時機。例如經過時間tst的時機之後,以檢測出所定次 數原料檢測訊號的時機設定爲基準時機Tm也可以。 之後,EUV光源裝置的控制部2 6,是以在步驟S 1 1 8 所設定的基準時機Tm作爲基準,藉由式(2 2 ) ( 1 4 )( 23 ) ( 24 )所求出的使用送訊以時機Tm作爲基準時的主 觸發訊號的時機Td1,對於第1雷射控制部23b的第1觸 發訊號的送出時機ΤΓ,對於控制第2雷射源24a的動作 的第2雷射控制部24b的第2觸發訊號的送出時機T2’, 俾將主觸發訊號,第1觸發訊號,第2觸發訊號,分別送 訊至脈衝電力供應手段的交換手段,第1雷射控制部2 3 b '第2雷射控制部24b (第13圖的步驟S119,第15圖的 S 209、S214、S217 )。 以下,移行至第1 4圖的步驟S 1 1 3,E U V光源裝置的 控制部2 6是將計測在主觸發訊號的輸出開始使得電極間 -78- 200908815 電壓一直到達至臨界値Vp爲止的電壓計數器予以動作。 又,將計測在第2觸發訊號的輸出開始使得放電電流一直 到達至臨界値IP爲止的電流計數器予以動作(第1 5圖的 S 2 1 2、S 2 1 6 )。又,如上述地,電壓計數器與電流計數器 ,是從曝光機的控制部輸入有發光指令訊號時’則被零清 除。 EUV光源裝置的控制部26是藉由未圖示於第9圖及 第1 0圖的電壓監測器檢測出電極間電壓到達至臨界値V p 的時機,俾停止電壓計數器。又’藉由未圖示的電流監測 器檢測出放電電流到達至臨界値ip的時機’俾停止電流 計數器(第14圖的步驟S114、第15圖的S212、S216) 〇 在步驟S1 12中,依據(22 )式,以時機Td’送出主觸 發訊號,該主觸發訊號被輸入至脈衝雷力供應手段的交換 手段之後,經過延遲時間d 1 ’則使交換手段成爲導通(第 14 圖的 S209、S210) ° 當交換手段成爲導通’則第1旋轉電極11、第2旋轉 電極1 2間的電壓會上昇,而在時間A t d之後,電極間電 壓到達至臨界値Vp (第15圖的S210、S211)。 如上述地,在步驟S112中’以依據(23)式的時機 丁2',使得第2觸發訊號被送出至第2雷射控制部24b。結 果,在電極間電壓到達至臨界値VP的時機(Td + Atd )以 後的時機T 2,使得第2雷射射束(起動用雷射射束)24 被照射在放電領域(第15圖的S213’S214)。 -79- 200908815 第2雷射射束24被照射在放電領域,而在放電 開始放電。開始放電之後,在Ati之後,放電電流的 到達至上述的臨界値Ip (第15圖的S214、S215)。 又,如上述地,在步驟S1 12中,依據(14 )式 機T1 ',使得第1觸發訊號被送出到第1雷射控制部 。結果,(T2 + Ati-Atg )〜(T2 + Ati + Atp-Atg )期間中 機T1,第1雷射射束(原料用雷射射束)23是被照 第 15 圖的 S215、S217、S218)。 亦即,在步驟S 1 1 9,EUV光源裝置的控制部2 6 各觸發訊號之結果,放電通道的位置被劃定在所定位 又,在位置被劃定的放電通道中,空間密度分布爲所 布的氣化原料的至少一部分到達至放電通道的狀態下 爲爲了放電電流的大小得到所定強度的EUV放射所 的放電電流的下限以上的方式,發生著放電。 放電是在第1旋轉電極11、第2旋轉電極12的 部的邊緣部分間發生,形成有電漿。藉由流動電漿的 狀的大電流,使電漿被加熱激勵而成爲高溫化,則從 溫電漿發生波長1 3 · 5 nm的EU V (第1 4圖的步驟S 1 第1 5圖的S 2 1 9 )。 又,上述的所定空間密度分布,是被設定成儘可 效率地發生EUV放射。 又,放電通道的位置被劃定在所定位置之故,因 昇生成電漿的位置的位置穩定性。 亦即,在步驟S119EUV光源裝置的控制部送訊 領域 大小 的時 23b 的時 射( 送訊 置。 定分 ,成 必需 周緣 脈衝 該筒 15、 能有 而提 各觸 -80- 200908815 發訊號的結果,可實現發生有效率的EUV放射,及EUV 放射的發生位置的穩定化。 從電漿所放射的EUV放射是藉由通過設於隔間壁1 c 的開口,輪型收集器3而藉由配置於聚光空間的斜入射型 的EUV聚光鏡2被聚光,由設定腔1的EUV光取出部7 ,被導入到省略圖示的曝光裝置的照射光學系。 以下,繼續曝光工程的期間,是重複步驟S 1 0 6至步 驟S 1 1 5間的工程。終了曝光工程時,則步驟S 1 1 5之後, 成爲結束。 藉由如以上所述的進行動作,利用第1雷射射束23 的照射而對應於放電領域的被氣化的高溫電漿原料的空間 密度分布,是被設定成儘量有效率地發生EUV放射。又 ,第1雷射射束23的照射結果,能設定此種適當的空間 密度分布的方式,事先適當地設定對於放電領域的原料供 應位置,對於原料的第1雷射射束23照射位置,第1雷 射射束23的照射能量。 —方面,藉由將第2雷射射束2 4聚光在放電領域的 所定位置,開始放電之同時,放電通道的位置被劃定在設 定雷射焦點的位置。所以,可提昇EUV放射的發生點的 位置穩定性。 在此,如上述地設定第1雷射射束23的照射時機與 第2雷射射束24的照射時機之故,因而在位置被劃定的 放電通道中,空間密度分布爲所定分布的氣化原料的至少 一部分在到達至該放電通道的狀態下,發生放電成爲放電 -81 - 200908815 電流的大小爲爲了得到所定強度的EUV放射所需的放電 電流値的下限以上。 結果,成爲可實現效率優異的E U V放射。 尤其是’在本實施例中,進行反饋控制使得主觸發訊 號的輸出後,電極間電壓到達至臨界値Vp的時間,及第 2觸發訊號的輸出後,放電電流到達至臨界値Ip的時間成 爲一定。所以,例如,即使,被使用作爲脈衝電力供應手 段的交換手段的固體開關S W的IG B T等的半導體交換元 件的動作上發生參差不齊,成爲也可確實地實現效率優異 的EUV放射。 又,如第10圖所示地,在生成有電漿的放電領域近 旁設置磁鐵6,而對於電漿施加磁場也可以。 如上述地,在本發明的EUV光源裝置中,在處於真 空氣氛的放電室間的放電領域近旁的空間供應高溫電漿原 料,而在所供應的高溫電漿原料照射雷射射束並氣化該高 溫電漿原料之後,將氣化後的高溫電槳原料供應於放電領 域。然後,在放電領域供應氣化的氣體的時機發生放電俾 生成進行EUV放射的電漿。如此地所發生的電漿,是爲 了放電領域的氣化後的高溫電漿原料的粒子密度斜度而擴 散並消失。亦即,電漿會擴散之故,因而電漿尺寸會變大 〇 在此,有與在第1及第2旋轉電極間所發生的放電方 向大約平行地施加一樣的磁場的情形。 處於一樣的磁場中的荷電粒子是受到洛仁子(Lorentg -82- 200908815 )力。洛仁子力是朝垂直於磁場的方向有所作用之故’因 而在垂直於磁場的平面上’荷電粒子是進行等速圓運動。 一方面,在平行於磁場的方向,荷電粒子是不會受到外力 之故,因而進行與初期速度相同的等速度運動。因此’荷 電粒子的運動是成爲合成上述的運動之故’因而沿著磁場 (朝磁場方向),進行一定間距的螺旋運動。 因此,推定與發生在第1及第2旋轉電極Η,12間 的放電方向大約平行施加一樣的磁場之際,若施加螺旋運 動磁力線周圍的荷電粒子的旋轉半徑變成充分小的磁場時 ,則可推定可減少上述的電槳擴散量。亦即,與未施加磁 場時相比較,則可減小電槳尺寸。又,考慮電漿壽命是比 擴散後自然消失還可保持長時間之故,因而如上述地,若 施加磁場,則與未施加該磁場的情形相比較,成爲可更久 地放射EUV。 亦即’若如上述地施加磁場,則可減小放射E U V的 高溫電漿的尺寸(亦即EUV光源的尺寸),而成爲可延 長EUV的放射時間。因此,本發明的EUV光源裝置是藉 由施加磁場,作爲曝光用光源成爲更佳。 又’上述的荷電粒子的旋轉半徑,比從電漿生成位置 —到EUV聚光鏡2爲止的最短距離還充分小時,則起因 於商溫電漿原料的碎屑中的高速離子的碎屑,是在該旋轉 半徑進行螺旋運動,而無法到達至聚光鏡。亦即,推定藉 由施加磁場可減少離子的碎屑的飛散量。 -83- 200908815 2.表示於第9圖、第ι〇圖的實施例的變形例 在本發明的EUV光源裝置中,用以放射極端紫外光 的高溫電漿原料,是在液體或固體的狀態下,被供應於放 電領域近旁。在表示於上述實施例1的EUV光源裝置中 ’上述原料是作成液滴狀被供應。 當然’高溫電漿原料的供應機構,是並不被限定於表 不於上述實施例的構成者。以下,針對於高溫電漿原料的 原料供應單元的其他例如加以說明。 (1 )第1變形例Atm = (2LP/G) 1/2 - (2L / G) W2 -- (19) The control unit 26 of the EUV light source device is the charger charging stabilization time tst of the time until the charging of the main capacitor CO is stabilized. At the timing, the timing at which the material detection signal from the material monitor 20a is first detected is used as the reference timing Tm (step S1 1 8 of Fig. 3, S204 'S207 of Fig. 5). Further, the setting of the reference timing Tm is not limited to the timing at which the raw material detection signal is first detected after the timing of the charger charging stabilization time tst. For example, after the timing of the time tst has elapsed, the timing at which the predetermined number of raw material detection signals are detected may be set as the reference timing Tm. Thereafter, the control unit 26 of the EUV light source device is determined by the equation (2 2 ) ( 1 4 ) ( 23 ) ( 24 ) using the reference timing Tm set in step S 1 18 as a reference. The timing Td1 of the main trigger signal when the timing Tm is used as the reference, the timing of the first trigger signal of the first laser control unit 23b, and the second laser control for controlling the operation of the second laser source 24a The sending timing T2' of the second trigger signal of the portion 24b, the main trigger signal, the first trigger signal, and the second trigger signal are respectively sent to the switching means of the pulse power supply means, and the first laser control unit 2 3 b 'The second laser control unit 24b (step S119 in Fig. 13 and S 209, S214, and S217 in Fig. 15). Hereinafter, the process proceeds to step S1 1 3 of FIG. 4, and the control unit 26 of the EUV light source device measures the voltage at which the output of the main trigger signal starts so that the voltage between the electrodes -78-200908815 reaches the critical value 値Vp. The counter is activated. Further, the current counter that has started to output the second trigger signal so that the discharge current has reached the critical value 値IP is measured (S 2 1 2, S 2 1 6 in Fig. 5). Further, as described above, when the voltage counter and the current counter are input from the control unit of the exposure machine, the light-emitting command signal is cleared by zero. The control unit 26 of the EUV light source device detects the timing at which the voltage between the electrodes reaches the critical threshold pV p by the voltage monitors not shown in Figs. 9 and 10, and stops the voltage counter. Further, 'the current monitor that is not shown is used to detect the timing at which the discharge current reaches the critical threshold ip', and the current counter is stopped (step S114 in FIG. 14 and S212 and S216 in FIG. 15). In step S1 12, According to the formula (22), the main trigger signal is sent at the timing Td', and after the main trigger signal is input to the switching means of the pulsed lightning supply means, the switching means is turned on after the delay time d 1 ' (S209 of Fig. 14) S210) ° When the switching means is turned on, the voltage between the first rotating electrode 11 and the second rotating electrode 1 2 rises, and after the time A td , the voltage between the electrodes reaches the critical value pVp (S210 of Fig. 15) , S211). As described above, in step S112, the second trigger signal is sent to the second laser control unit 24b by the timing 2' according to the equation (23). As a result, the timing T 2 after the timing at which the voltage between the electrodes reaches the timing 値VP (Td + Atd ) causes the second laser beam (the starting laser beam) 24 to be irradiated in the discharge field (Fig. 15 S213'S214). -79- 200908815 The second laser beam 24 is irradiated in the discharge field, and discharge starts at the discharge. After the discharge is started, after the Ati, the discharge current reaches the above-described critical 値Ip (S214, S215 of Fig. 15). Further, as described above, in step S112, the first trigger signal is sent to the first laser control unit in accordance with the (14) type machine T1'. As a result, during the period (T2 + Ati-Atg ) to (T2 + Ati + Atp-Atg ), the first laser beam (the laser beam for raw material) 23 is illuminated by S215 and S217 in Fig. 15 S218). That is, in step S119, the control unit 26 of the EUV light source device triggers the signal, and the position of the discharge channel is delineated in the positionally located, and in the discharge channel where the position is delimited, the spatial density distribution is When at least a part of the vaporized raw material to be discharged reaches the discharge channel, the discharge is generated so that the discharge current is equal to or higher than the lower limit of the discharge current of the EUV radiation having a predetermined intensity. The discharge occurs between the edge portions of the first rotating electrode 11 and the second rotating electrode 12, and plasma is formed. When the plasma is heated and excited by the large current in the form of a flowing plasma to be heated, the EU V having a wavelength of 1 3 · 5 nm is generated from the warm plasma (Step S 1 of Figure 14) S 2 1 9). Further, the above-described predetermined spatial density distribution is set such that EUV radiation is generated as efficiently as possible. Further, the position of the discharge channel is determined at a predetermined position, and the positional stability of the position at which the plasma is generated is increased. That is, in step S119, the control unit of the EUV light source device transmits the time zone 23b of the size of the field (send the signal. The minute is divided into the required peripheral pulse, the cylinder 15 can be provided with the signal of the -80-200908815 As a result, efficient EUV radiation and stabilization of the occurrence position of EUV radiation can be achieved. EUV radiation emitted from the plasma is borrowed by the wheel type collector 3 through the opening provided in the partition wall 1c. The EUV concentrating mirror 2 disposed in the concentrating space is condensed, and is introduced into the illuminating optical system of the exposure apparatus (not shown) by the EUV light extracting unit 7 of the setting chamber 1. Hereinafter, the period of the exposure process is continued. Is the process from step S 1 0 6 to step S 1 15 5. When the exposure process is finished, the process is completed after step S 1 1 5 . By performing the action as described above, the first laser is used. The spatial density distribution of the gasified high-temperature plasma raw material corresponding to the discharge area in the irradiation of the beam 23 is set to generate EUV radiation as efficiently as possible. Further, the irradiation result of the first laser beam 23 can be set. Such appropriate space In the manner of the degree distribution, the raw material supply position in the discharge area is appropriately set in advance, and the irradiation energy of the first laser beam 23 is applied to the irradiation position of the first laser beam 23 of the raw material. The radiation beam 24 is condensed at a predetermined position in the discharge field, and at the same time as the discharge is started, the position of the discharge channel is defined at the position where the laser focus is set. Therefore, the positional stability of the occurrence point of the EUV radiation can be improved. Since the irradiation timing of the first laser beam 23 and the irradiation timing of the second laser beam 24 are set as described above, the spatial density distribution is a gasification material having a predetermined distribution in the discharge channel whose position is defined. When at least a part of the discharge channel reaches the discharge channel, the discharge becomes a discharge -81 - 200908815. The magnitude of the current is equal to or higher than the lower limit of the discharge current 所需 required for obtaining EUV radiation of a predetermined intensity. As a result, the efficiency is excellent. EUV radiation. Especially in the present embodiment, the feedback control is performed such that after the output of the main trigger signal, the voltage between the electrodes reaches the critical 値Vp, and the second After the output of the trigger signal, the time until the discharge current reaches the critical value 値Ip is constant. Therefore, for example, the operation of the semiconductor switching element such as IG BT of the solid-state switch SW using the switching means of the pulse power supply means occurs. In addition, as shown in Fig. 10, the magnet 6 may be provided in the vicinity of the discharge region in which the plasma is generated, and the magnetic field may be applied to the plasma. In the EUV light source device of the present invention, a high-temperature plasma raw material is supplied in a space near a discharge region between discharge cells in a vacuum atmosphere, and the supplied high-temperature plasma raw material irradiates a laser beam and vaporizes the high temperature. After the slurry raw material, the vaporized high-temperature electric paddle material is supplied to the discharge field. Then, a discharge occurs at the timing of supplying the vaporized gas in the discharge field, and plasma for performing EUV radiation is generated. The plasma generated in this way is diffused and disappears for the particle density gradient of the high-temperature plasma raw material after vaporization in the discharge field. That is, since the plasma is diffused, the size of the plasma is increased. Here, the same magnetic field is applied approximately in parallel with the discharge direction occurring between the first and second rotating electrodes. Charged particles in the same magnetic field are subjected to the force of Loreng (82-200908815). The Lorenzi force acts in a direction perpendicular to the magnetic field, so that the charged particles are moving in a constant velocity circular motion on a plane perpendicular to the magnetic field. On the one hand, in the direction parallel to the magnetic field, the charged particles are not subjected to an external force, and thus the same velocity motion as the initial velocity is performed. Therefore, the motion of the charged particles is to synthesize the above-described motion, and thus a helical motion of a certain pitch is performed along the magnetic field (toward the direction of the magnetic field). Therefore, it is estimated that when the same magnetic field is applied in parallel in the discharge direction between the first and second rotating electrodes Η12, if the radius of rotation of the charged particles around the helical moving magnetic field becomes a sufficiently small magnetic field, It is presumed that the above-mentioned electric paddle diffusion amount can be reduced. That is, the size of the electric paddle can be reduced as compared with when no magnetic field is applied. Further, it is considered that the plasma life is longer than the natural disappearance after diffusion, and as described above, when a magnetic field is applied, EUV can be emitted longer than when the magnetic field is not applied. That is, if a magnetic field is applied as described above, the size of the high-temperature plasma that radiates E U V (i.e., the size of the EUV light source) can be reduced, and the emission time of the EUV can be extended. Therefore, the EUV light source device of the present invention is more preferably used as an exposure light source by applying a magnetic field. Further, the above-mentioned rotational radius of the charged particles is sufficiently smaller than the shortest distance from the plasma generation position to the EUV condensing mirror 2, and the high-speed ion debris in the debris of the commercial temperature plasma raw material is This radius of rotation is helically moved and cannot reach the concentrating mirror. That is, it is presumed that the amount of scattering of ions is reduced by applying a magnetic field. -83- 200908815 2. Modification of the embodiment shown in Fig. 9 and Fig. ○ In the EUV light source device of the present invention, the high temperature plasma material for emitting extreme ultraviolet light is in a liquid or solid state. Next, it is supplied near the discharge field. In the EUV light source device shown in the above-described first embodiment, the above-mentioned raw materials were supplied in the form of droplets. Of course, the supply mechanism of the high-temperature plasma raw material is not limited to those exemplified in the above embodiment. Hereinafter, other materials for the raw material supply unit for the high-temperature plasma raw material will be described, for example. (1) First modification
第16圖及第17圖是表示用以說明上述實施例的第1 變形例的圖式。詳細地’第1 6圖是表示本發明的EUV光 源裝置的前視圖。EUV放射是從同圖左邊被取出。亦即, 第16圖是表示圖示於第9圖的實施例的EUV光源裝置中 ’置換原料供應單元的部分者。又,爲了容易瞭解,第16 圖是表示以原料供應單元的配置,構成作爲重點者,EUV 光嫄裝置的一部分是被省略。又,被省略的部分是與第9 圖同等。 一方面,第17圖是表示本實施例的EUV光源裝置的 俯視圖,與第1 6圖同樣,EUV光源裝置的一部分是被省 略。 在表示於第1 6圖及第1 7圖的變形例中,作爲高溫電 發原料使用著線狀原料3丨。具體上,包括極端紫外光放射 種籽的金屬線,例如包括錫(S η )。 -84 - 200908815 第1變形例的原料供應單元30是具有將線狀原料3ι 供應於所定空間的功能。該原料供應單元30是由:捲軸 3〇a、捲軸3〇e、定位手段3〇b、定位手段3〇c、線狀原料 31、驅動機構30d所構成。χ,驅動機構3〇d是藉由在第 16圖及第17圖中省略圖示的控制部被驅動控制。 線狀原料31是被捲繞在捲軸3〇a及捲軸3〇e。捲軸 3 0a是送出線狀原料3丨的上游側的捲軸。一方面,捲軸 3〇e是捲取從捲軸30a所送出的線狀原料3丨的下游側的捲 軸。線狀原料31是藉由驅動機構3〇d使得關—被旋 轉驅動’而從捲軸30a被送出。 從捲軸30a所送出的線狀原料31,是從第丨雷射源 23a所放出的第!雷射射束(原料用雷射射束)23被照射 時,會氣化。如上述地,氣化的高溫電獎用原料的擴展方 向’是依存於第i雷射射束23對於原料31的人射位置。 因此第!雷射射帛23 f寸於線狀原半斗31的入射位置面 臨放電領域的方式,線狀原料3 i是藉由定位手段3〇b、定 位手段30c被定位。又,該被定位的位置,是藉由第1雷 射射束23照射於線狀原料3丨被氣化的原料,可到達至放 電領域的位置。 又’線狀原料31被供應’且在線狀原料η照射第1 雷射射束23肖’氣化後的高溫電槳原料(液體原料)朝 放電領域的方向擴展的方式,被調整從第丨雷射源23a所 放出的第1雷射射束23的光軸’及第1雷射射束23的能 -85- 200908815 在此,放電領域與線狀原料31的距離,是藉由雷射 射束照射朝放電領域的方向擴展的氣化後的高溫電漿原料 ’被設定成以所定空間密度分布到達至放電領域。 又’如第1 ό圖及第丨7圖所示地,線狀原料31是供 應於一對電極1 1,1 2與Ε ϋ V聚光鏡2之間的空間較佳。 對於如此地所供應的線狀原料31,將第1雷射射束 2 3如上述地照射在面臨於線狀原料表面的放電領域的一側 ’則氣化後的線狀原料是朝放電領域的方向擴展,惟不會 朝EUV聚光鏡2的方向擴展。 亦即’如上述地藉由設定對於放射領域的線狀原料3工 供應位置’及第1雷射射束23的照射位置,成爲可抑制 碎屑進行至EUV聚光鏡2。 (2 )第2變形例 第18圖及第19圖、第20圖是表示用以說明上述實 施例的第2變形例的圖式。詳細地,第is圖是表示本實 施例的EUV光源裝置的前視圖。EUV放射是從同圖左邊 被取出。亦即,第18圖是表示圖示於第9圖的實施例的 EUV光源裝置中,置換原料供應單元20的部分者。 又,爲了容易瞭解’第18圖是表示以原料供應單元 的配置’、構成者,EUV光源裝置的一部分是被省略。又 ’被省略的部分是與桌9圖冋等。 一方面’第19圖是表示本實施例的EUV光源裝置的 俯視圖,第2 0圖是表示本發明的EUV光源裝置的側視圖 -86 - 200908815 ’與第1 8圖同樣地’ EUV光源裝置的一部分是被省略, 又’在第1 9圖’表示經由滑動件饋電至電極1 1,〗2的情 形’例如,如同圖所示地,對於電極12的脈衝電力的饋 電’是從電力導入部1 2 c經由滑動件1 2 d所進行。 表示於第18圖、第19圖及第20圖的變形例是作爲 高溫電漿原料使用著液體原料。具體上,包括極端紫外光 放射種籽的液體原料,例如包括錫(Sn )。 第2變形例的原料供應單元4〇是具有將液體原料供 應於所定空間的功能。該原料供應單元40是由液體原料 供應手段40a、原料供應圓盤40b、第3電動機40c所構 成。又,液體原料供應手段40a,省略圖示的第3電動機 驅動機構,是在藉由在第18圖、第19圖、第20圖中省 略圖示的控制部被驅動控制。 在原料供應用圓盤40b的側面側設有溝部。首先,液 體原料是藉由液體原料供應手段4 0 a被供應於上述溝部中 。之後’藉由第3電動機4〇c朝一方向旋轉原料供應圓盤 4 0b。被供應於溝部的液體原料,是與溝部的旋轉一起進 行移動。 被供應於溝部的液體原料,是從第1雷射源23a所放 出的第1雷射射束(原料用雷射射束)23被照射時,會氣 化。如上述地’氣化的高溫電漿用原料的擴展的方向,是 依存於第1雷射射束2 3對於原料的射入位置。因此,對 於被供應於溝部的液體原料的第1雷射射束的入射位置面 臨於放電領域的方式,原料供應用圓盤4 0 b是配置於放電 -87- 200908815 領域。 具體上’原料供應用圓盤40b是被配置成溝部所設置 的側面部面臨放電領域。又,原料供應用圓盤4 0 b所配置 的位置’是藉由第1雷射射束23被照射於供應於溝部的 液體原料被氣化的原料,可到達至放電領域的位置。 又’液體原料被供應,且將第1雷射射束2 3照射在 面臨放電領域時’氣化後的高溫電漿原料(液體原料)朝 放電領域的方向擴展的方式,被調整從第i雷射源23 a所 放出的第1雷射射束23的光軸,及第1雷射射束23的能 量。 放電領域與原料供應用圓盤40b的距離,是藉由第1 雷射射束23朝放電領域的方向擴展的氣化後的高溫電漿 原料’被設定成以所定空間密度分布到達至放電領域。 在此,被供應於溝部的液體原料是與溝部的旋轉一起 移動之故,因而藉由液體原料供應手段40a將液體原料連 續地供應液體原料,藉由此成爲可連續地供應於所定的第 1雷射射束2 3的照射位置。 又,如第18、第19、第20圖所示地,在第2變形例 的構成中,被供應於溝部的液體原料是對於光軸垂直的平 面上的空間,且對於放電領域近旁移動,第1雷射射束2 3 是照射於從與光軸垂直方向供應於溝部的液體原料。所以 ,氣化後的高溫電漿原料(液體原料),是不會朝EUV 聚光鏡2的方向擴展。因此,第1雷射射束23對於高溫 電漿原料的照射,及利用以電極間所發生的放電所生成的 -88- 200908815 碎屑,是對於EUV聚光鏡2幾乎不會進行。 (3 )第3變形例 第21圖及第22圖是表不用以說明上述實施例的第3 變形例的圖式。詳細地’第2 1圖是表示本實施例的e U V 光源裝置的前視圖。EUV放射是從同圖左邊被取出。一方 面,第22圖是表示本發明的EUV光源裝置的側視圖。 第21圖及第22圖是表示在圖示於第9圖的實施例的 EUV光源裝置中,置換原料供應單元20的部分及電極者 ,又’爲了容易瞭解’第21圖是表示以原料供應單元的 配置’構成作爲重點者’ EUV光源裝置的一部分是被省略 。又,被省略的部分是與第9圖同等。 在表示於第21圖及第22圖的第3變形例中,作爲高 溫電漿原料使用著液體原料。具體上,包括極端紫外光放 射種籽的液體原料,例如包括錫(S η )。 第3變形例的原料供應單元5 0是具有將液體原料供 應於所定空間的功能。該原料供應單元5 0是由液體原料 總線50a、毛細管50b、加熱器50c、液體原料總線控制部 50d、加熱器用電源5〇e所構成。又,液體原料總線控制 部50d、加熱器用電源50e,是利用在第21圖、第22圖 中省略圖示的控制被驅動控制。 液體原料總線50a是收容包括極端紫外光放射種籽的 液體原料者。在液體原料總線5 0 a,設有極細管的毛細管 5〇b。毛細管50b是貫通於液體原料總線50a的液體原料 -89- 200908815 收容部。在第3變形例的原料供應單元5 0中,被收容於 液體原料總線50a的液體原料,是毛細管現象’被輸送毛 細管50b內部而被引導至毛細管50b前端。 作爲包括被收容於液體原料總線5 0 a的極端紫外光放 射種籽的液體原料,例如使用錫(Sn )。液體原料總線的 溫度是Sn維持液體狀態的方式。藉由液體原料總線控制 部50d被控制。又,毛細管50b是爲了避免管中的液體原 料的固化,藉由加熱器50c被加熱。對於加熱器50c的電 力供應。是藉由加熱器用電源50e所進行。 從第1雷射源2 3 a所放出的第1雷射射束(原料用雷 射射束)23照射於到達至毛細管50b前端的液體原料時, 則液體原料是被氣化。如上述地,氣化的高溫電漿用原料 的擴展方向,是依存於第1雷射射束23對於原料的入射 位置。 因此,第1雷射射束23對於到達至毛細管50b前端 的液體原料的入射位置面臨放電領域的方式,毛細管50b 的前端是被配置。又,毛細管50b的前端所配置的位置, 是藉由第1雷射射束23照射在供應於毛細管50b前端的 液體原料而被氣化的原料,可到達至放電領域的位置。 如此’液體原料被供應於毛細管50b前端,且將第1 雷射射束23照射於毛細管前端時,則氣化後的高溫電漿 原料(液體原料)朝放電領域的方向擴展的方式,從第1 雷射源23a所放出的雷射射束的光軸,及第1雷射射束23 的功率被調整。 -90- 200908815 在此’放電領域與毛細管50b前端之距離,是藉由雷 射射束照射朝放電領域的方向擴展的氣化後的高溫電漿原 料’以所定空間密度分布到達至放電領域的方式被設定。 又’被供應於毛細管5 0b前端的液體原料是藉由毛細 管現象’從液體原料總線5 0a移動之故,因而成爲可連續 地供應於所定的原料用雷射射束2 3的照射位置。 又,在表示於第21圖、第22圖的第3變形例中,採 用柱狀電極的第1電極1 1,、第2電極1 21。此些第1電極 1 Γ、第2電極12'是僅隔著所定距離地配置,兩者是被連 續於脈衝電力發生器8。當然,作爲電極也可採用旋轉電 極。 又,如第21圖及第2 2圖所示地,在第3變形例的構 成中’供應液體原料的毛細管5 Ob前端是位於垂直於光軸 的平面上的空間,而第1雷射射束23是對於被供應於配 置在上述位置的毛細管50b前端的液體原料被照射。所以 ’氣化後的高溫電漿原料(液體原料),是不會朝EUV 聚光鏡2的方向擴展。因此,對於高溫電漿原料的原料用 雷射射束的照射,及藉由在電極間所發生的放電所生成的 碎屑,是對於EUV聚光鏡2是幾乎未進行。 (4 )氣化原料放出噴嘴 如上述地,在本發明中,在高溫電漿原料照射第1能 量射束(原料能量射束)23使之氣化。被氣化的高溫電漿 原料是以所定的速度擴展。藉由適當地設定對於放電領域 -91 - 200908815 的原料的供應位置,第1能量射束23對於原料的照射方 向’第1能量射束23的照射能量等,俾在放電領域內, 供應著被氣化的高溫電漿原料。又,藉由上述設定,可將 在放電領域所氣化的高溫電漿原料的空間密度分布設定於 所定分布。 此時’藉由第1能量射束的照射朝放電領域方向擴展 的高溫電漿原料,是儘量有較多到達至放電領域者較佳。 若到達至放電領域以外的高溫電漿原料過多,則來自所供 應的高溫電漿原料的EUV放射的取出效率降低而不理想 。又’到達至放電領域以外的高溫電漿原料的一部分,是 作爲碎屑也有與EUV光源裝置內的低溫度接觸,而成爲 堆積的可能性。 如此’如第23圖所示地’在高溫電漿原料的第1能 量射束23的照射位置安裝原料噴出用的管狀噴嘴也可以 〇 第23圖是表示使用管狀噴嘴時的槪念圖。 如第23(a)圖所示地,第1能量射束23是通過管狀 噴嘴60a的貫通孔。當通過管狀噴嘴60a的第1能量射束 23被照射在高溫電漿原料2 1 ’則原料是被氣化。如第23 (b)圖所示地,氣化原料2Γ是通過管狀噴嘴6〇a,而由 管狀噴嘴6〇a噴出。 由管狀噴嘴60a所噴出的氣化原料2Γ是藉由管狀噴 嘴6 0a被限制噴射角度。所以,成爲可將指向性良好而高 密度的氣化原料供應於放電領域。 -92- 200908815 又,管狀噴嘴的形狀是並不被於如表示於第23圖的 直管形狀者。例如,如表示於第2 4圖的槪念圖地,在噴 嘴內部的一部分設置狹窄部的高速噴射用噴嘴形狀也可以 〇 如第24 ( a )圖所示地,第1能量射束23是通過高速 噴射用噴嘴60b的貫通孔。當通過高速噴射用噴嘴60b的 第1能量射束23被照射至高溫電漿原料2 1,則原料是被 氣化。在此,在高速噴射用噴嘴60b內部設有狹窄部62 之故,因而在該狹窄部62,及高溫電漿原料21的第1能 量射束23所照射的部分之間的空間〔第24 ( b )圖的壓力 上昇部63〕內,是藉由氣化的原料使得壓力急激地上昇。 又’如第24 ( b )圖所示地,氣化原料是從狹窄部62的開 Π部分被加速,且作爲指向性優異的高速氣體流被噴射。 在此,高速氣體流的噴射方向是依存於高速噴射用噴 嘴6 0b的方向。亦即,氣化原料21,的進行方向是未依存 於第1能量射束23對於高溫電漿原料21的入射方向。 又,狹窄部62的開口是斷面積變小之故,因而若第1 能量射束23未照射於高溫電漿原料2 1的時間過久,則高 溫電漿原料21被固化,也使得開口被閉塞。因此,如第 24(e)圖所示地,高溫電漿原料21不會在高速噴射用噴 嘴6 0b內部的固化的方式,以加熱器64等進行加熱高速 噴射用噴嘴60b也可以。 表示於第23圖、第24圖的管狀噴嘴60a,高速噴射 用噴嘴60b是可適用於上述的實施例或各變形例。然而, -93- 200908815 管狀噴嘴60a、高速噴射用噴嘴60b’是儘量近接於高溫 電槳原料21者,更有效果。 尤其是,高速噴射用噴嘴60b,是必須構成壓力上昇 部63之故,因而在高速噴射用噴嘴60b內部,狹窄部62 、及高溫電漿原料2 1的第1能量射束23所照射的部分之 間的空間,是儘量構成作爲氣密的空間較佳。例如,如第 2 5圖所示地,使用一體地構成收容高溫電漿原料2 1的原 料收容部6 0 c與高速噴射用噴嘴6 0 b的原料供應單元6 0 較佳。 又,整流機構是並不被限定於上述的例子者。例如, 在固體狀高溫電漿原料21中’如第26圖所示地,在雷射 射束2 3所照射的位置事先形成凹部6 1 a也可以。 當雷射射束2 3被照射於高溫電漿原料2 1的凹部6 1 a ,則高溫電漿21是被氣化,而生成著低溫電漿氣體2 1 ·。 在此,藉由凹部61a所噴出的低溫電漿氣體21’,是藉由 該凹部8 a的壁狀噴嘴被限制噴射角度。所以,成爲可將 指向性良好的低溫電漿氣體流動選擇性地連續供應於放電 通道。 (5 )上述實施例的變形例的EUV光源裝置的動作 在上述的各種變形例中,在第1雷射射束(原料用雷 射射束)23的照射位置連續地供應有高溫電漿原料。因此 ,此些的變形例的EUV光源裝置的動作例,是與上述實 施例的EUV光源裝置的動作例有些不相同。 -94- 200908815 以下’針對於第1變形例’說明E U V光源裝置的動 作。 第27圖及桌28圖是表不本實施例的動作的流程圖, 第29圖是表示時序圖’以下藉由第27圖至第29圖,說 明本實施例的動作。又’在本變形例與先前所說明的實施 例中’在其動作上並沒有很大相差之故,因而針對於與在 上述弟13圖至弟15圖所說明者同樣的部分加以簡單地說 明。 E U V光源裝置的控制部2 6是如上述地記憶時間資料 △ td、Ati、Atg。又,如上述地Atd是從觸發訊號輸入至脈 衝電力供應手段的交換手段的時機(時刻Td),交換手 段採用導通狀態而電極間電壓到達至臨界値Vp爲止的時 間’ Ati是開始放電之後,流在電極間的電流大小到達至 臨界値Ip爲止的時間,At g是從第1雷射射束被照射在原 料的時機一直到空間密度分布爲所定分布的氣化原料的至 少一部分到達至放電領域爲止的時間。 又,將在事先以實驗等所求出的電壓V與時間Atd之 關係記憶作爲表格,又,記憶上述的修正時間α,β,及從 主觸發訊號輸出至脈衝電力供應手段的交換手段的時機, 使得交換手段成爲導通的時機爲止的延遲時間dl。 首先,來自EUV光源裝置的控制部26的候用指令被 送訊(第27圖的步驟S301,第29圖的S401),如上述 地,受訊候用指令的真空排氣裝置4,5,氣體供應單元 1 3 , 1 4等開始動作。藉由此,放電空間1 a成爲真空氣氛 -95- 200908815 。又,在聚光空間lb內供應緩衝氣體、洗淨氣體, 聚光空間1 b到達至所定壓力。又,第1電動機2 2 a、 電動機22b進行動作,而旋轉第1旋轉電極π、第2 電極12。又,藉由驅動機構30d使得捲軸30e旋轉驅 藉由此,從捲軸30a送出,而成爲候用狀態(第27 步驟S302、第29圖的S402)。 EUV光源裝置的控制部26是在曝光裝置的控制f 送訊候用完成訊號(第27圖的步驟S305、第29 5405 ) 〇 EUV光源裝置的控制部26是藉由曝光裝置的控 27 ’受訊發光指令(第27圖的步驟S 3 06、第29 5406 )。 實現候用狀態後,EUV光源裝置的控制部26是 電控制訊號發訊至脈衝電力發生器8的充電器CH。 控制訊號是例如由放電開始計時資料訊號等所成,而 主充電器C0的充電電壓訊號也包含在上述充電控制 。EUV光源裝置的控制部26,是如上述地參照儲存 放射強度與對主電容器C0的充電電壓的關係的表格 出主電容器C0的充電電壓資料,而將包含對於主電 C0的充電電壓資料訊號的充電控制訊號送訊至脈衝 發生器的充電器CH (第27圖的步驟S307、第29 5407 ) 〇 充電器CH是如上述地進行主電容器C0的充電 27圖的步驟S308)。 使得 第2 旋轉 動, 圖的 ¢27 圖的 制部 圖的 將充 充電 對於 訊號 EUV ,求 容器 電力 圖的 (第 -96- 200908815 之後,EUV光源裝置的控制部26 ’是開始運轉之後 ,判定是否最初的EUV光發生(稱爲初次脈衝)(第27 圖的步驟S3 09 ),若爲初次脈衝時,則從步驟S309移行 至步驟S 3 1 0。 又,在不是初次脈衝時’則移行至步驟S 3 1 6。 在步驟S3 10,EUV光源裝置的控制部26,是計算對 於控制第1雷射源23a的動作的第1雷射控制部23b的第 1觸發訊號的送出時機,對於控制第2雷射源24a的動作 的第2雷射控制部24b的第2觸發訊號的送出訊號。 初次脈衝時,如上述地無法做反饋修正之故,依據事 先所記憶的時間資料△ t d、Δ t i、A t g、d 1、α、β來決定上 述時機。 亦即,如上述地,以將主觸發訊號輸出於脈衝電力供 應手段的交換手段的時機Td'作爲基準,從上述(11)式 、(5 )式,求出對於控制第1雷射源23 a的動作旳第1 雷射控制部23b的第1觸發訊號的送出時機T1·,對於控 制第2雷射源24a的動作的第2雷射控制部24b的第2觸 發訊號的送出時機T2’(第29圖的S408 )。 藉由此’設定以將主觸發訊號輸入於脈衝電力供應手 段的交換手段的時機Td作爲基準的照射有第1雷射射束 、第2雷射射束的時間τ 1、T 2。 之後’ EUV光源裝置的控制部26,是經過主電容器 C0的充電成爲穩定爲止的時間的充電器充電穩定時間tst 之時機後’將主觸發訊號送訊至脈衝電力供應手段的交換 -97- 200908815 手段。將此時的時機作爲Td'(第27圖的步驟S311、第 29 圖的 S409 )。 EUV光源裝置的控制部26,是以送訊主觸發訊號的 時機Td'作爲基準,藉由式(5 )( 1 1 )在步驟S3 10所求 出的對於第1雷射控制部23b的第1觸發訊號的送出時機 Τ Γ ’對於第2雷射控制部24b的第2觸發訊號的送出時 機T2’,俾將第1觸發訊號、第2觸發訊號分別送訊至第 1雷射控制部23b、第2雷射控制部24b (第27圖的步驟 S312、第 29 圖的 S413、 S417)。 又,如上述地EUV光源裝置的控制部2 6是將計測在 主觸發訊號的輸出開始使得電極間電壓一直到達至臨界値 Vp爲止的電壓計數器,及將計測在第2觸發訊號的輸出 開始使得放電電流一直到達至臨界値Ip爲止的電流計數 器予以動作(第28圖的步驟S313,第29圖的S410、 S412 ) 〇 又’如上述地,電壓計數器與電流計數器是爲了將主 觸發訊號輸出後’電極間電壓一直到達至臨界値Vp爲止 的時間’及第2觸發訊號輸出後,放電電流一直到達至臨 界値ϊρ爲止的時間作成一定而反饋控制所用者。亦即第i 觸發訊號的送出時機T1’、第2觸發訊號的送出時機T2,, 是最初的第一次(初次脈衝),是如上述地,依據式(5 )(11 )所決定’惟第2次以後,依據上述電壓計數器, 電流計數器的計數値經修正的數値來決定上述式(5 )( 11) ° -98- 200908815 EUV光源裝置的控制部26是藉由未圖示的電壓監測 器檢測出電極間電壓到達至臨界値Vp的時機,停止電壓 計數器,又,藉由未圖示的電流監測器檢測出電流到達至 臨界値Ip的時機,停止電流計數器(第28圖的步驟S314 、第 29 圖的 S412、S416 ) ° 在此,在步驟S31 1中,當在時機Td1送出主觸發訊號 ,則該主觸發訊號被輸入至脈衝電力供應手段的交換手段 之後經過延遲時間d 1後,使得交換手段(例如IGBT )成 爲導通(第29圖的S409、S410)。 當交換手段成爲導通,則第1旋轉電極11、第2旋轉 電極1 2間的電壓會上昇,而在時間Atd後,使得電極間 電壓到達至臨界値Vp。如上述地,該臨界値Vp是發生放 電時流動的放電電流數値成爲臨界値Ip以上時的電壓値 (第 29 圖的 S410、S411)。 如上述地,在步驟S 3 1 2中,在依據(5 )式的時機 T2%使得第2觸發訊號被送出至第2雷射控制部24b。結 果’在電極間電壓到達至臨界値Vp的時機(Td + Atd )以 後的時機T2中’使得第2雷射射束(起動用雷射射束) 24被照射在放電領域(圖29的S413、S414)。 第2的雷射射束24被照射在放電領域、在放電領域 開始放電。開始放電後,在Ati後,使得放電電流的大小 達到上述的臨界値Ip (第29圖的S414、S415)。該臨界 値Ip是爲了得到所定強度的EUV放射所必需的放電電流 値的下限。 -99- 200908815 如上述地,在步驟S312中,依據(11)式的時機ΤΙ’ ,使得第1觸發訊號被送出至第1雷射控制部23b。結果 ,在(T2 + Ati-Atg )〜(T2 + Ati + Atp-Atg )期間中的時機 T1、第1雷射射束(原料雷射射束)23是被照射(第29 圖的 S415、S417、S418 ) ° 亦即,EUV光源裝置的控制部26,是在步驟S3U中 送訊主雷射射束,而在步驟S3 12中送訊第1觸發訊號、 第2觸發訊號之結果,放電通道的位置被劃定在所定位置 。又,在位置被劃定的放電通道中,空間密度分布處於所 定分布的氣化原料在至少一部分到達至該放電通道的狀態 下,爲了得到放電電流的大小成爲所定強度的EUV放射 所必需的放電電流値的下限以上的方式,發生著放電。 藉由此,形成有電漿,而當藉由流著電漿的脈衝狀大 電流使得電漿被加熱激勵成爲高溫化,則從該高溫電漿發 生著波長13.5nm的EUV放射(第28圖的步驟S315、第 29 圖的 S419 )。 如上述地,從電漿所放射的EUV放射,是藉由通過 設於隔間壁1 C的開口、輪型收集器3而配置於聚光空間 lb的斜入射型的EUV聚光鏡2被聚光,由設於腔1的 EUV光取出部7被引導至省略圖示的曝光裝置的照射光學 系。Fig. 16 and Fig. 17 are views showing a first modification of the above embodiment. In detail, Fig. 16 is a front view showing the EUV light source device of the present invention. EUV radiation is taken from the left side of the same figure. That is, Fig. 16 is a view showing a part of the replacement raw material supply unit in the EUV light source device of the embodiment shown in Fig. 9. Moreover, in order to make it easy to understand, FIG. 16 shows that the arrangement of the raw material supply unit is focused on, and a part of the EUV diaphragm device is omitted. Further, the omitted portion is equivalent to the ninth figure. On the other hand, Fig. 17 is a plan view showing the EUV light source device of the present embodiment, and a part of the EUV light source device is omitted as in the case of Fig. 16. In the modification shown in Fig. 16 and Fig. 7, a linear material 3 is used as a high-temperature electric hair material. Specifically, a metal wire including an extreme ultraviolet radiation seed, for example, includes tin (S η ). -84 - 200908815 The material supply unit 30 of the first modification has a function of supplying the linear material 3ι to a predetermined space. The material supply unit 30 is composed of a reel 3〇a, a reel 3〇e, a positioning means 3〇b, a positioning means 3〇c, a linear material 31, and a drive mechanism 30d.驱动, the drive mechanism 3〇d is driven and controlled by a control unit (not shown) in Figs. 16 and 17 . The linear material 31 is wound around a reel 3〇a and a reel 3〇e. The spool 30a is a spool on the upstream side of the linear material 3丨. On the other hand, the reel 3〇e is taken up by the winding shaft on the downstream side of the linear material 3丨 fed from the reel 30a. The linear material 31 is fed from the reel 30a by the drive mechanism 3〇d so that it is driven to be rotated. The linear material 31 sent from the reel 30a is the first one discharged from the second laser source 23a! When the laser beam (field beam for laser beam) 23 is irradiated, it is vaporized. As described above, the direction of expansion of the vaporized high-temperature electric prize material is dependent on the position of the human target of the i-th laser beam 23 with respect to the raw material 31. So the first! The laser shot 23 f is positioned such that the incident position of the linear original half bucket 31 faces the discharge area, and the linear material 3 i is positioned by the positioning means 3〇b and the positioning means 30c. Further, the position to be positioned is a material which is vaporized by the first laser beam 23 and is vaporized by the linear material 3, and can reach a position in the discharge region. In addition, the linear material 51 is supplied, and the linear raw material η is irradiated to the first laser beam 23, and the high-temperature electric paddle material (liquid material) is expanded in the direction of the discharge region, and is adjusted from the third The optical axis ' of the first laser beam 23 emitted by the laser source 23a and the energy of the first laser beam 23 are -85-200908815. Here, the distance between the discharge region and the linear material 31 is by laser. The vaporized high-temperature plasma raw material 'expanded by the beam irradiation in the direction of the discharge region is set to reach the discharge region at a predetermined spatial density distribution. Further, as shown in Fig. 1 and Fig. 7, the linear material 31 is preferably provided in a space between the pair of electrodes 1, 1, 2 and the 聚 ϋ V condensing mirror 2. In the linear material 31 thus supplied, the first laser beam 23 is irradiated on the side facing the discharge region of the surface of the linear material as described above, and the linear material which is vaporized is toward the discharge field. The direction is extended, but does not extend in the direction of the EUV condenser 2. In other words, by setting the irradiation position of the linear material 3 to the radiation field and the irradiation position of the first laser beam 23 as described above, it is possible to suppress the debris from proceeding to the EUV condensing mirror 2. (2) Second modification Fig. 18, Fig. 19, and Fig. 20 are views for explaining a second modification of the above embodiment. In detail, Fig. is a front view showing the EUV light source device of the embodiment. EUV radiation is taken from the left side of the same figure. That is, Fig. 18 is a view showing a portion of the EUV light source device of the embodiment shown in Fig. 9 in which the raw material supply unit 20 is replaced. Further, in order to facilitate the understanding, the "18th drawing shows the arrangement of the raw material supply means" and the constituents, a part of the EUV light source device is omitted. The part that was omitted is the same as the table 9 and so on. On the one hand, Fig. 19 is a plan view showing the EUV light source device of the present embodiment, and Fig. 20 is a side view showing the EUV light source device of the present invention -86 - 200908815 'the same as Fig. 8'. A part is omitted, and 'in the 19th figure' indicates a case where the electric power is fed to the electrode 1 1, 2 via the slider. For example, as shown in the figure, the feeding of the pulse electric power to the electrode 12 is from the electric power. The introduction portion 1 2 c is performed via the slider 1 2 d. The modification shown in Fig. 18, Fig. 19, and Fig. 20 is a liquid material used as a high-temperature plasma material. Specifically, liquid materials including extreme ultraviolet radiation seed, for example, include tin (Sn). The raw material supply unit 4A of the second modification has a function of supplying a liquid raw material to a predetermined space. The material supply unit 40 is composed of a liquid material supply means 40a, a material supply disk 40b, and a third motor 40c. Further, the liquid material supply means 40a is a third motor drive mechanism (not shown), and is driven and controlled by a control unit (not shown) in Figs. 18, 19, and 20. A groove portion is provided on the side surface side of the raw material supply disk 40b. First, the liquid material is supplied to the above-mentioned groove portion by the liquid material supply means 40a. Thereafter, the raw material supply disk 40b is rotated in one direction by the third motor 4〇c. The liquid material supplied to the groove portion moves together with the rotation of the groove portion. The liquid material supplied to the groove is vaporized when the first laser beam (field laser beam) 23 emitted from the first laser source 23a is irradiated. The direction in which the raw material for the vaporized high-temperature plasma is expanded as described above depends on the injection position of the first laser beam 2 to the raw material. Therefore, the material supply disk 40b is disposed in the field of discharge -87-200908815, in such a manner that the incident position of the first laser beam supplied to the liquid material of the groove portion faces the discharge region. Specifically, the raw material supply disk 40b is disposed such that the side surface portion provided in the groove portion faces the discharge region. Further, the position "arranged by the raw material supply disk 40b" is a material that is vaporized by the first laser beam 23 to be supplied to the liquid material supplied to the groove portion, and can reach a position in the discharge region. In addition, the liquid material is supplied, and the first laser beam 2 is irradiated in the field of discharge, and the high-temperature plasma raw material (liquid raw material) which is vaporized is expanded in the direction of the discharge field, and is adjusted from the i-th The optical axis of the first laser beam 23 emitted by the laser source 23a and the energy of the first laser beam 23. The distance between the discharge area and the raw material supply disk 40b is a high-temperature plasma raw material after the gasification of the first laser beam 23 in the direction of the discharge region is set to reach the discharge field with a predetermined spatial density distribution. . Here, since the liquid raw material supplied to the groove portion moves together with the rotation of the groove portion, the liquid raw material is continuously supplied to the liquid raw material by the liquid raw material supply means 40a, whereby the first supply can be continuously supplied to the predetermined first The irradiation position of the laser beam 2 3 . Further, as shown in the 18th, 19th, and 20th, in the configuration of the second modification, the liquid material supplied to the groove portion is a space on a plane perpendicular to the optical axis, and moves toward the vicinity of the discharge region. The first laser beam 2 3 is irradiated with a liquid material supplied from the groove portion in a direction perpendicular to the optical axis. Therefore, the high-temperature plasma raw material (liquid raw material) after gasification does not expand toward the EUV condenser 2. Therefore, the irradiation of the high-temperature plasma material by the first laser beam 23 and the use of the -88-200908815 debris generated by the discharge between the electrodes are hardly performed on the EUV condensing mirror 2. (3) Third Modifications Figs. 21 and 22 are diagrams for explaining the third modification of the above embodiment. In detail, Fig. 2 is a front view showing the e U V light source device of the present embodiment. EUV radiation is taken from the left side of the same figure. On the one hand, Fig. 22 is a side view showing the EUV light source device of the present invention. 21 and 22 are diagrams showing the parts and electrodes of the replacement material supply unit 20 in the EUV light source device of the embodiment shown in Fig. 9, and 'for easy understanding', Fig. 21 shows the supply of raw materials. The configuration of the unit 'constitution as a focus' is part of the EUV light source device is omitted. Further, the omitted portion is equivalent to the ninth figure. In the third modification shown in Fig. 21 and Fig. 22, a liquid raw material is used as a high-temperature plasma raw material. Specifically, liquid materials including extreme ultraviolet light-emitting seeds, for example, include tin (S η ). The raw material supply unit 50 of the third modification has a function of supplying a liquid raw material to a predetermined space. The material supply unit 50 is composed of a liquid material bus 50a, a capillary 50b, a heater 50c, a liquid material bus control unit 50d, and a heater power source 5〇e. Further, the liquid material bus control unit 50d and the heater power source 50e are driven and controlled by the control (not shown) in Figs. 21 and 22 . The liquid material bus 50a is a liquid material containing a substrate containing extreme ultraviolet radiation. On the liquid material bus 50 a, a capillary tube 5〇b of a very thin tube is provided. The capillary 50b is a liquid material-89-200908815 accommodating portion that penetrates the liquid material bus line 50a. In the raw material supply unit 50 of the third modification, the liquid material accommodated in the liquid material bus line 50a is guided by the capillary phenomenon 'to the inside of the capillary tube 50b and guided to the tip end of the capillary 50b. As the liquid material including the extreme ultraviolet light-emitting seed contained in the liquid material bus line 50 a, for example, tin (Sn) is used. The temperature of the liquid feed bus is the way Sn maintains the liquid state. The liquid material bus control unit 50d is controlled. Further, the capillary 50b is heated by the heater 50c in order to avoid solidification of the liquid material in the tube. The power supply to the heater 50c. This is done by the heater power supply 50e. When the first laser beam (raw material laser beam) 23 discharged from the first laser source 2 3 a is irradiated to the liquid material reaching the tip end of the capillary 50b, the liquid material is vaporized. As described above, the direction in which the raw material for vaporized high-temperature plasma expands depends on the incident position of the first laser beam 23 with respect to the raw material. Therefore, the first laser beam 23 faces the discharge region with respect to the incident position of the liquid material reaching the tip end of the capillary 50b, and the tip end of the capillary 50b is disposed. Further, the position at which the tip end of the capillary 50b is disposed is a material which is vaporized by the first laser beam 23 to be supplied to the liquid material supplied to the tip end of the capillary 50b, and reaches a position in the discharge region. When the liquid material is supplied to the tip end of the capillary 50b and the first laser beam 23 is irradiated to the tip end of the capillary tube, the vaporized high-temperature plasma material (liquid material) is expanded in the direction of the discharge region. 1 The optical axis of the laser beam emitted by the laser source 23a and the power of the first laser beam 23 are adjusted. -90- 200908815 Here, the distance between the discharge field and the front end of the capillary 50b is a high-temperature plasma raw material that is vaporized by the laser beam in the direction of the discharge field, and reaches the discharge field with a predetermined spatial density distribution. The mode is set. Further, the liquid material supplied to the tip end of the capillary 50b is moved from the liquid material bus line 50a by the capillary phenomenon, so that it can be continuously supplied to the predetermined irradiation position of the raw material laser beam 23. Further, in the third modification shown in Fig. 21 and Fig. 22, the first electrode 1 1 and the second electrode 1 21 of the columnar electrode are used. The first electrode 1 Γ and the second electrode 12' are disposed only at a predetermined distance, and are connected to the pulse power generator 8. Of course, a rotating electrode can also be used as the electrode. Further, as shown in Fig. 21 and Fig. 2, in the configuration of the third modification, the tip end of the capillary 5 Ob supplied with the liquid material is a space on a plane perpendicular to the optical axis, and the first laser beam is emitted. The bundle 23 is irradiated with a liquid material supplied to the tip end of the capillary 50b disposed at the above position. Therefore, the high-temperature plasma raw material (liquid raw material) after gasification does not expand toward the EUV condenser 2. Therefore, the irradiation of the laser beam by the raw material of the high-temperature plasma raw material and the debris generated by the discharge occurring between the electrodes are hardly performed for the EUV condensing mirror 2. (4) Gasification raw material discharge nozzle As described above, in the present invention, the high-temperature plasma raw material is irradiated with the first energy beam (raw material energy beam) 23 to be vaporized. The vaporized high temperature plasma material is expanded at a predetermined rate. By appropriately setting the supply position of the raw material for the discharge region -91 - 200908815, the first energy beam 23 is supplied with the irradiation energy of the first energy beam 23 in the irradiation direction of the raw material, etc. Gasified high temperature plasma raw materials. Further, by the above setting, the spatial density distribution of the high-temperature plasma raw material vaporized in the discharge region can be set to a predetermined distribution. At this time, it is preferable that the high-temperature plasma raw material which is expanded in the direction of the discharge by the irradiation of the first energy beam is as large as possible to reach the discharge field. If the high-temperature plasma raw material other than the discharge region is too large, the extraction efficiency of EUV radiation from the supplied high-temperature plasma raw material is lowered, which is not preferable. Further, a part of the high-temperature plasma raw material that has reached the discharge field is likely to be deposited as a chip with low temperature in the EUV light source device. Thus, as shown in Fig. 23, the tubular nozzle for discharging the raw material may be attached to the irradiation position of the first energy beam 23 of the high-temperature plasma material. Fig. 23 is a view showing the use of the tubular nozzle. As shown in Fig. 23(a), the first energy beam 23 is a through hole that passes through the tubular nozzle 60a. When the first energy beam 23 passing through the tubular nozzle 60a is irradiated to the high-temperature plasma raw material 2 1 ', the raw material is vaporized. As shown in Fig. 23(b), the vaporized raw material 2Γ is ejected from the tubular nozzle 6〇a through the tubular nozzle 6〇a. The vaporized raw material 2 喷 ejected from the tubular nozzle 60a is restricted by the injection angle of the tubular nozzle 60a. Therefore, it is possible to supply a gasification raw material having good directivity and high density to the field of discharge. Further, the shape of the tubular nozzle is not in the shape of a straight pipe as shown in Fig. 23. For example, as shown in the figure of Fig. 24, the shape of the high-speed jet nozzle in which a narrow portion is provided in a part of the inside of the nozzle may be as shown in Fig. 24 (a), and the first energy beam 23 is The through hole of the high speed injection nozzle 60b is passed. When the first energy beam 23 passing through the high-speed jet nozzle 60b is irradiated to the high-temperature plasma material 2 1, the raw material is vaporized. Here, since the narrow portion 62 is provided inside the high-speed jet nozzle 60b, the space between the narrow portion 62 and the portion irradiated by the first energy beam 23 of the high-temperature plasma material 21 is the 24th ( b) In the pressure rising portion 63 of the figure, the pressure is rapidly increased by the vaporized raw material. Further, as shown in Fig. 24(b), the vaporized raw material is accelerated from the open portion of the narrowed portion 62, and is ejected as a high-speed gas flow excellent in directivity. Here, the jet direction of the high-speed gas stream depends on the direction of the high-speed jet nozzle 60b. That is, the progress direction of the vaporized raw material 21 is not dependent on the incident direction of the first energy beam 23 with respect to the high temperature plasma raw material 21. Further, since the opening of the narrowed portion 62 has a small sectional area, if the first energy beam 23 is not irradiated to the high-temperature plasma raw material 2 1 for a long time, the high-temperature plasma raw material 21 is solidified, and the opening is also made Occlusion. Therefore, as shown in Fig. 24(e), the high-temperature plasma raw material 21 may be heated in the high-speed injection nozzle 60b, and the high-speed injection nozzle 60b may be heated by the heater 64 or the like. The tubular nozzle 60a shown in Figs. 23 and 24 and the high-speed jet nozzle 60b are applicable to the above-described embodiment or each modification. However, the -93-200908815 tubular nozzle 60a and the high-speed jet nozzle 60b' are as close as possible to the high-temperature electric paddle material 21, which is more effective. In particular, since the high-speed injection nozzle 60b is required to constitute the pressure rising portion 63, the portion of the high-speed injection nozzle 60b that is irradiated by the narrow energy portion 23 and the first energy beam 23 of the high-temperature plasma material 2 1 is irradiated. The space between them is as good as possible as a space that is airtight. For example, as shown in Fig. 25, it is preferable to integrally form the raw material storage unit 60c that accommodates the high-temperature plasma raw material 2 1 and the raw material supply unit 60 of the high-speed injection nozzle 6 0 b. Further, the rectifying mechanism is not limited to the above examples. For example, in the solid high-temperature plasma raw material 21, as shown in Fig. 26, the concave portion 6 1 a may be formed in advance at a position where the laser beam 23 is irradiated. When the laser beam 2 3 is irradiated to the concave portion 6 1 a of the high-temperature plasma raw material 2 1 , the high-temperature plasma 21 is vaporized to generate the low-temperature plasma gas 2 1 ·. Here, the low-temperature plasma gas 21' discharged from the concave portion 61a is restricted in the ejection angle by the wall nozzle of the concave portion 8a. Therefore, it becomes possible to selectively supply the low-temperature plasma gas flow having good directivity to the discharge channel continuously. (5) Operation of the EUV light source device according to the modification of the above-described embodiment In the above various modifications, the high-temperature plasma material is continuously supplied to the irradiation position of the first laser beam (field laser beam) 23 . Therefore, the operation example of the EUV light source device of the above-described modification is somewhat different from the operation example of the EUV light source device of the above-described embodiment. -94-200908815 The operation of the E U V light source device will be described below with respect to the first modification. Fig. 27 and Table 28 are flowcharts showing the operation of this embodiment, and Fig. 29 is a timing chart hereinafter. The operation of this embodiment will be described with reference to Figs. 27 to 29. Further, 'the present modification and the previously described embodiment' are not greatly different in their operation, and therefore, the same portions as those described in the above-mentioned drawings 13 to 15 are briefly explained. . The control unit 26 of the E U V light source device stores the time data Δtd, Ati, and Atg as described above. Further, as described above, Atd is the timing (time Td) of the switching means input from the trigger signal to the pulse power supply means, and the switching means is in the on state and the time between the electrodes reaches the critical value 値Vp. The time when the current flowing between the electrodes reaches a critical time 値Ip, At g is from the timing at which the first laser beam is irradiated to the raw material until the spatial density distribution reaches a predetermined distribution of the vaporized raw material to reach the discharge. The time until the field. In addition, the relationship between the voltage V and the time Atd obtained by experiments or the like in advance is stored as a table, and the timings of the above-described correction time α, β, and the switching means output from the main trigger signal to the pulse power supply means are memorized. The delay time dl until the switching means becomes the timing of the conduction. First, the candidate command from the control unit 26 of the EUV light source device is transmitted (step S301 in Fig. 27, S401 in Fig. 29), and as described above, the vacuum exhaust devices 4, 5 of the command waiting command are The gas supply unit 1 3 , 1 4 and the like start to operate. Thereby, the discharge space 1 a becomes a vacuum atmosphere -95-200908815. Further, a buffer gas and a cleaning gas are supplied in the condensing space lb, and the condensing space 1 b reaches a predetermined pressure. Further, the first electric motor 2 2 a and the electric motor 22b operate to rotate the first rotating electrode π and the second electrode 12. Further, the reel 30e is rotated by the drive mechanism 30d, and is sent out from the reel 30a to be in a standby state (S27, S302, S402 of Fig. 29). The control unit 26 of the EUV light source device is a control f transmission completion signal of the exposure device (steps S305 and 29405 of Fig. 27). The control unit 26 of the EUV light source device is controlled by the exposure device. The light-emitting command (step S 3 06, page 29 5406 of Fig. 27). After the standby state is realized, the control unit 26 of the EUV light source device transmits the electric control signal to the charger CH of the pulse power generator 8. The control signal is formed, for example, by a discharge start timing data signal, and the charging voltage signal of the main charger C0 is also included in the above charging control. The control unit 26 of the EUV light source device refers to the charging voltage data of the main capacitor C0 in the table in which the relationship between the stored radiation intensity and the charging voltage of the main capacitor C0 is referred to as described above, and the charging voltage data signal for the main power C0 is included. The charge control signal is sent to the charger CH of the pulse generator (steps S307, 295407 of Fig. 27). The charger CH is a step S308) of charging the main capacitor C0 as described above. In the second rotation, the charge map of the ¢27 diagram of the figure is charged and charged to the signal EUV for the container power map (after the -96-200908815, after the control unit 26' of the EUV light source device starts to operate, it is determined Whether the initial EUV light is generated (referred to as the first pulse) (step S3 09 of Fig. 27), and if it is the first pulse, the process proceeds from step S309 to step S3 1 0. Also, when it is not the initial pulse, then In step S3, the control unit 26 of the EUV light source device calculates the timing of sending the first trigger signal to the first laser control unit 23b that controls the operation of the first laser source 23a. The second trigger signal of the second laser control unit 24b that controls the operation of the second laser source 24a is sent. When the first pulse is not possible, the feedback is corrected as described above, based on the time data Δtd memorized in advance. Δ ti, A tg, d 1 , α, β determine the timing. That is, as described above, the timing Td' of the switching means for outputting the main trigger signal to the pulse power supply means is used as a reference, from the above (11) Formula (5) The second timing control unit 24b that controls the operation of the first laser source 23a, the first trigger signal of the first laser beam control unit 23b, and the second laser control unit 24b that controls the operation of the second laser source 24a. The timing T2 of the second trigger signal is transmitted (S408 in FIG. 29). The first laser beam is irradiated by the timing Td of the switching means for inputting the main trigger signal to the pulse power supply means. The time τ 1 and T 2 of the beam and the second laser beam. Then, the control unit 26 of the EUV light source device is after the timing of the charger charging stabilization time tst until the charging of the main capacitor C0 is stabilized. The main trigger signal is transmitted to the pulse power supply means -97-200908815 means. The timing at this time is taken as Td' (step S311 of Fig. 27, S409 of Fig. 29). The control unit 26 of the EUV light source device is The timing of sending the first trigger signal to the first laser control unit 23b obtained by the equation (5) (1 1 ) in the equation (5) (1 1 ) is based on the timing Td' of the main trigger signal. When the second trigger signal of the second laser control unit 24b is sent out The machine T2' transmits the first trigger signal and the second trigger signal to the first laser control unit 23b and the second laser control unit 24b (step S312 of Fig. 27, S413, S417 of Fig. 29). Further, as described above, the control unit 26 of the EUV light source device measures the voltage counter until the output of the main trigger signal is started so that the voltage between the electrodes reaches the threshold 値Vp, and the measurement starts at the output of the second trigger signal. The current counter that causes the discharge current to reach the critical threshold pIp is operated (step S313 of Fig. 28, S410, S412 of Fig. 29). 如 Again, as described above, the voltage counter and the current counter are for outputting the main trigger signal. After the 'time between the electrodes reaches the critical 値Vp' and the second trigger signal is output, the time until the discharge current reaches the critical 値ϊρ is made constant and the feedback control is used. That is, the sending timing T1' of the i-th trigger signal and the sending timing T2 of the second trigger signal are the first first time (the first pulse), as described above, according to the equation (5)(11). After the second time, the control unit 26 of the EUV light source device is controlled by a voltage (not shown) based on the voltage counter and the count of the current counter 修正 the corrected number 値 to determine the above equation (5) (11) ° -98 - 200908815 The monitor detects the timing at which the voltage between the electrodes reaches the critical threshold pVp, stops the voltage counter, and detects the timing at which the current reaches the critical threshold 藉Ip by the current monitor (not shown), and stops the current counter (step of Fig. 28) S314, S412, S416 of FIG. 29) Here, in step S31, when the main trigger signal is sent at the timing Td1, the delay time d1 elapses after the main trigger signal is input to the switching means of the pulse power supply means. Thereafter, the switching means (for example, IGBT) is turned on (S409, S410 of Fig. 29). When the switching means is turned on, the voltage between the first rotating electrode 11 and the second rotating electrode 1 2 rises, and after the time Atd, the voltage between the electrodes reaches the critical 値Vp. As described above, the threshold 値Vp is the voltage 时 when the number of discharge currents flowing when the discharge occurs is equal to or greater than the threshold 値Ip (S410 and S411 in Fig. 29). As described above, in step S3 1 2, the second trigger signal is sent to the second laser control unit 24b at the timing T2% according to the equation (5). As a result, 'the second laser beam (starting laser beam) 24 is irradiated in the discharge field in the timing T2 after the timing at which the voltage between the electrodes reaches the critical 値Vp (Td + Atd ) (S413 of Fig. 29) , S414). The second laser beam 24 is irradiated in the discharge region and starts to discharge in the discharge region. After the discharge is started, after the Ati, the magnitude of the discharge current is made to reach the above-described critical 値Ip (S414, S415 of Fig. 29). This critical 値Ip is the lower limit of the discharge current 値 necessary for obtaining EUV radiation of a predetermined intensity. -99- 200908815 As described above, in step S312, the first trigger signal is sent to the first laser control unit 23b in accordance with the timing ΤΙ' of the equation (11). As a result, the timing T1 and the first laser beam (raw material laser beam) 23 in the period of (T2 + Ati-Atg ) to (T2 + Ati + Atp - Atg ) are irradiated (S415 of Fig. 29, S417, S418) ° That is, the control unit 26 of the EUV light source device transmits the main laser beam in step S3U, and transmits the result of the first trigger signal and the second trigger signal in step S312, and discharges The position of the channel is defined at the specified position. Further, in the discharge channel whose position is defined, the spatial density distribution is a discharge necessary for the EUV emission of a predetermined intensity in order to obtain the discharge current in a state where at least a part of the vaporized raw material of the predetermined distribution reaches the discharge channel. The discharge occurs in a manner in which the lower limit of the current 値 is equal to or higher. Thereby, plasma is formed, and when the plasma is heated and excited by the pulsed large current flowing through the plasma to be high-temperature, EUV radiation having a wavelength of 13.5 nm is generated from the high-temperature plasma (Fig. 28) Step S315, S419 of Fig. 29). As described above, the EUV radiation emitted from the plasma is condensed by the oblique incidence type EUV condensing mirror 2 disposed in the condensing space 1b by the opening provided in the partition wall 1 C and the wheel type collector 3 The EUV light extraction unit 7 provided in the chamber 1 is guided to an illumination optical system of an exposure apparatus (not shown).
如以上地當結束初次EUV放射之後,回到步驟S306 ,待機來自曝光裝置的發光指令。受訊發光指令之後,經 上述的步驟S307、S308,移行至步驟S309。下一次EUV -100- 200908815 放射並不是初次脈衝之故,因而從步驟S109移行 S3 16。在步驟S316中,EUV光源裝置的控制部26 壓計數器的數値及電流計數器的數値作爲基準藉由 20 )( 2 1 )式進行對於第1雷射控制部的第1觸發 送出時機Τ Γ,對於控制第2雷射源的動作的第2 制部的第2觸發訊號的送出時機T2'的反饋運算(凳 的步驟S316、第29圖的S408)。 EUV光源裝置的控制部26是考慮在步驟S3 16 的修正値,藉由下式來決定以送訊主觸發訊號Td' 準時的對於第1雷射控制部2 3 b的第1觸發訊號的 機Τ1 ',對於控制第2雷射源24a的動作的第2雷 部24b的第2觸發訊號的逆出時機T2'(第27圖 S317,第 29 圖的 S408)。 T2 '二Td’ + d 1 + Atd +α + t vcal ·· (24)After the initial EUV radiation is ended as described above, the process returns to step S306 to wait for the light-emitting command from the exposure device. After the received light-emitting command, the process proceeds to step S309 via steps S307 and S308 described above. The next EUV-100-200908815 radiation is not the first pulse, so S3 16 is shifted from step S109. In step S316, the number of the pressure counters and the number of current counters of the control unit 26 of the EUV light source device are used as a reference, and the first touch transmission timing for the first laser control unit is performed by the equation 20) ( 2 1 ). The feedback calculation of the second trigger signal transmission timing T2' of the second control unit that controls the operation of the second laser source (step S316 of the stool, S408 of Fig. 29). The control unit 26 of the EUV light source device determines the first trigger signal for the first laser control unit 2 3 b by the following equation, in consideration of the correction in step S3 16 by the following equation: Τ1', the timing T2' of the second trigger signal of the second thunder portion 24b that controls the operation of the second laser source 24a (S27, S317, S408 of Fig. 29). T2 'two Td' + d 1 + Atd +α + t vcal ·· (24)
Tl,=:Td + dl+(Atd-Ati-Atg) + (a + P) + (tvcal+tical) EUV光源裝置的控制部2 6是經過主電容器C 0 成爲穩定爲止的時間的充電器充電穩定時間tst的 之後,送訊主觸發訊號。將這時候的時機作爲Td1 ! 圖的步驟S318、第29圖的S409)。 又,將主觸發訊號送訊至脈衝電力供應手段的 段的時機T d '作爲基準’而在以藉由式(2 4 )( 2 5 得的以時機Td'作爲基準時的對於第1雷射控制部 第1觸發訊號的送出時機Τ1 ’,對於控制第2雷射 的動作的第2雷射控制部24b的第2觸發訊號的送 至步驟 是以電 上述( 訊號的 雷射控 ;27圖 所求出 作爲基 送出時 射控制 的步驟 …(25) 的充電 時機, :第27 交換手 )所求 23b的 源24a 出時機 -101 - 200908815 T21,將第1觸發訊號、第2觸發訊號分別送訊至第!雷 射控制部23b、第2雷射控制部24b (第27圖的步驟 S3 19、第 29 圖的 S414、S417 )。 之後,移行至第2 8圖的步驟S 3 1 3,如上述地,將在 主觸發訊號的開始輸出就計測電極間電壓到達至臨界値 Vp爲止的電壓計數器予以動作,又,將在第2觸發訊號 的開始輸出就計測放電電流到達至臨界値Ip爲止的電流 計數器予以動作(第29圖的S410、S412)。 然後,藉由未圖不的電壓監測器檢測出電極間電壓到 達至臨界値Vp的時機,俾停止電壓監測器。又,藉由未 圖示的電流監測器檢測出放電電流到達至臨界値Ip的時 機,俾停止電流監測器(第2 8圖的步驟S 3 1 4、第2 9圖 的 S412、S416)。 在此,在步驟S311中,當以時機Τ(Γ送出主觸發訊號 ,則如上述地交換手段成爲導通(第29圖的S409、S410 ),而在時間 Atd後,電極間電壓到達至臨界値Vp (第 29 圖的 S410、S411) ° 在步驟SH2中’以依據(5)式的時機T2’,第2觸 發訊號被送出至第2雷射控制部24b,而在電極間電壓到 達至臨界値Vp的時機(Td + Md )以後的時機T2中,第2 雷射射束(起動用雷射射束)2 4被照射在放電領域(第 29 圖的 S413、S414 ) ° 第2雷射射束被照射在放電領域,而在放電領域開始 放電,開始放電之後,在Ati後,放電電流的大小達到上 -102- 200908815 述的臨界値Ip (第29圖的S414、S415 )。 如上述地,在步驟S312中’依據(11)式的時機T1· ,使得第1觸發訊號被送出至第1雷射控制部2 3 b。結果 ,在(T2 + Ati-Atg)〜(T2 + Ati + Atp-Atg)期間中的時機 T1、第1雷射射束(原料雷射射束)23是被照射(第29 圖的 S415、S417、S418)。 藉由此,在步驟S318及S319’ EUV光源裝置的控制 部送訊各觸發訊號的結果,放電通道的位置被劃定在所定 位置。 又,在位置被劃定的放電通道中,空間密度分布處於 所定分布的氣化原料在至少一部分到達至該放電通道的狀 態下,爲了得到放電電流的大小成爲所定強度的EUV放 射所必需的放電電流値的下限以上的方式,發生著放電。 放電是在第1旋轉電極11、第2旋轉電極12的周緣 部的邊緣部分間發生,而形成有電漿,當藉由流著電漿的 脈衝狀大電流使得電漿被加熱激勵成爲高溫化,則從該高 溫電漿發生著波長13.5nm的EUV放射(第28圖的步驟 S3 I 5、第 29 圖的 S419 )。 從電漿所放射的EUV放射,是藉由通過設於隔間壁 1 c的開口、輪型收集器3而配置於聚光空間1 b的斜入射 型的EUV聚光鏡2被聚光,由設於腔1的EUV光取出部 7被引導至省略圖示的曝光裝置的照射光學系。 以下,繼續曝光工程的期間,是重複著步驟S 3 06至 步驟S3 15間的工程。若結束曝光工程時,則在步驟S315 -103- 200908815 之後,成爲結束。 藉由如以上地進行動作,如上述地,藉由照射第1雷 射射束2 3,被供應於放電領域的經氣化的原料的空間密度 分布,是被設定成儘量有效地發生EUV放射。又,藉由 將第2雷射射束2 4聚光於放電領域的所定位置,使得放 電通道的位置被劃定在設定雷射焦點的位置。所以,可提 昇EUV放射的發生點的位置穩定性。 如上述地設定第1雷射射束23的照射時機與第2雷 射射束24的照射時機之故,因而空間密度分布處於所定 分布的氣化原料的至少一部分在到達至該放電通道的狀態 下,爲了得到放電電流的大小成爲所定強度的EUV放射 所必需的放電電流値的下限以上時發生放電。結果,成爲 可實現效率優異的EUV放射。 又,如上述地主觸發訊號的輸出後,電極間電壓到達 至臨界値Vp爲止的時間,及第2觸發訊號的輸出後,放 電電流到達至臨界値Ip爲止的時間成爲一定的方式進行 反饋控制之故,因而即使在使用作爲脈衝電力供應手段的 交換手段的固體開關S W的半導體交換元件的動作上產生 參差不齊,也成爲可確實地實現效率優異的EUV放射。 (6 )調整照射 在放電電極間容易發生放電的方式,進行第1能量射 束2 3的調整照射也可以。以下,針對於此種放電的起動 性的改善對策,加以簡單地說明。 -104- 200908815 作爲例子’在表示於上述第9圖、第10圖的實施例 的EUV光源裝置中’來說明調整照射的實施順序。在第 3 0圖表不實施調整照射時的時序圖。 如上述地’表示於上述實施例的EUV光源裝置中, 藉由適當設定原料供應用的第1雷射射束(原料用雷射射 束)23與放電起動用的第2能量射束(起動用雷射射束) 24的照射時機’以所定空間密度分布的經氣化的高溫電漿 原料的至少一部分到達至放電領域的時機,設定成在放電 領域所發生的放電的放電電流爲所定臨界値以上。 在本順序中’在照射與第2雷射射束24的照射時機 適當地設定的第1雷射射束(原料雷射射束)23之前,將 該第1雷射射束23照射1次以上在高溫電槳原料者。 在表示於第30圖的例子,在與第2雷射射束24的照 射時機適當地設定的第1雷射射束23之前,照射3次第1 雷射射束23。將此種雷射射束的照射稱爲調整照射。 若實施調整照射,則經氣化的高溫電漿原料到達至放 電領域。被調整照射的第1雷射射束(原料雷射射束)23 是與放電起動用的第2雷射射束24沒有相關關係,且第2 雷射射束24是未照射之故,因而到達至放電領域的經氣 化的高溫電漿原料的一部分’是附著於第1放電電極11、 第2放電電極1 2。 在此種狀態下’當第2能量射束2 3被照射在放電領 域的所定位置,則附著於位於放電領域近旁的上述第1放 電電極11、第2放電電極12的高溫電漿原料的一部分被 -105- 200908815 氣化。經氣化的原料是有助於放電之故,因而在放電電極 間確實地容易發生放電。亦即,放電的起動性被改善。 又,爲了附著於放電電極n,12的高溫電漿原料的 一部分被氣化’第2能量射束2 4的至少一部分,必須放 電電極1 1,1 2的高溫電漿原料所附著的部分照射。 3 .長脈衝化 以下’針對於本發明的EUV放射的長脈衝化加以說 明。 在以下針對於(1 )實施本發明的EUV發生方法的 EUV光源裝置的基本構成例,(2)本發明的EUV發生順 序,(3 )能量射束(雷射射束)的照射時機,(4 )原料 供應系統,(5 )整流機構,(6 )電極位置,高溫電漿原 料供應位置’能量射束(雷射射束)照射位置的互相關係 ’(7 )原料氣化用能量射束的能量,(8 )具體性構成例 加以說明。以下,作爲能量射束以雷射射束爲例子加以說 明,惟能量射束爲電子射束等也可以。 (1 )實施本發明的EUV發生方法的EUV光源裝置的 基本構成例 首先,針對於基本構成例加以說明。在第3 1圖表示 依據本發明的被長脈衝化的EUV光源裝置的基本構成例 〇 在同圖中,在放電容器的腔1內部設置有第1電極11 -106- 200908815 及第2電極12。例如第1電極11是陰極,而第2電極12 是陽極’第2電極12是被接地。亦即,在兩電極間施加 有負極性的高電壓。 在兩電極,連接有脈衝電力供應手段1 5。脈衝電力供 應手段1 5是爲了在兩電極間流著脈衝寬較長的電流,例 如採用著 PFN ( Pulse Forming Network)電路方式。 又,在上述的一對電極近旁的放電領域外,設有高溫 電槳原料21。作爲高溫電漿原料21,例如使用錫(Sn) 、鋰(Li)等的金屬。此些是固體或液體都可以。在第31 圖模式地表示高溫電漿原料21爲固體金屬的例子。 爲了生成低溫電漿(經氣化的高溫電漿原料),使用 著雷射源23a。由雷射源23a所放出的雷射射束23 ,是被 導光至腔1內部而被照射在固體或液體的高溫電漿原料21 。雷射的照射能量是氣化固體或液體狀的高溫電漿原料, 惟爲不太會上昇電子溫度的程度的能量,例如l〇8W/Cm2〜 1 019W/cm2 的範圍。 當在高溫電漿原料21照射雷射射束,則高溫電漿原 料21的至少一部分會氣化,成爲低溫電漿21’被噴出。藉 由適當地設定所照射的雷射射束的條件,例如從固體狀高 溫電漿原料2 1約1 0μ5的期間,連續地噴出經氣化的高溫 電漿原料(低溫電漿氣體2 1 ')。 如上述地,低溫電漿氣體是電漿內的離子密度爲1〇17 ~102C)cnr3左右,而電子溫度爲lev以下左右的狀態下, 構成選擇性地供應在電極間事先所形成的放電通道。 -107- 200908815 又’放電通道是以放電電流的自我磁場變細。一 藉由雷射射束的照射’從固體材料或液體材料所噴出 料蒸氣’是一面朝三維方向膨脹一面進行。因此,從 電發原料21所噴出的低溫電漿氣體,是藉由省略圖 整流機構’被整流成爲指向性優異的穩定流。又,整 構的例子是以後會加以說明。 (2 )本發明的EUV發生順序 使用表示於第3 2圖的時序圖,來說明本發明的 生成方式。作爲例子’以多自束方式作爲例子。 首先,在將脈衝電力施加於一對電極1 1,丨2間 衝電力供應手段15的交換手段(例如igBT)輸入( Td)有觸發訊號〔第32(a)〕 ’交換手段是成爲導 能〇 隨著此’電極間電壓會上昇〔第32(b)圖〕。 在電壓到達至某一臨界値Vp的時機Tl( =Td + Atd ) 放電〔第32(c)圖〕。發生放電是藉由在第31圖省 示的放電起動手段的動作所進行。該臨界値Vp是在 放電時所流動的放電電流値成爲臨界値Ip以上(或 非自束方式時Ip2以上)時的電壓値。亦即,在不足 値V p發生放電時,則放電電流的峰値是未到達至臨 Ip 或 Ip2 。 由時機T1在電極間開始流動放電電流,而形成 電通道。又,在經過Ati的時機(ΤΙ +Δίί ),放電電 般, 的材 高溫 示的 流機 EUV 的脈 時機 通狀 如此 發生 略圖 發生 是, 臨界 界値 有放 流値 -108- 200908815 是到達至臨界値Ip。如上述地,該臨界値Ip是將依電流 的自我磁場的壓縮壓力作爲PB,而將電漿的壓力作爲Pp 時,則設定成爲PB》Pp〔上述(104 )式〕。亦即,藉由 自我磁場,可將低溫電漿氣體作成充分壓縮的電流値。 又,上述臨界値Ip,也是具有將低溫電漿氣體(電漿 內的離子密度爲1〇17〜l〇2()ciir3左右,電子溫度爲lev以 下左右)的電子溫度可加熱至2 0〜3 OeV或其以上的能量的 電流値。 又,在時機(Tl+Ati )中,流動放電領域的放電通道 的直徑是成爲充分細小。 在該時機(Τ1+ΔΗ )以後,具有相當於EUV放射條 件的離子密度而低電子溫度的低溫電漿氣體的至少一部分 選擇性地到達至細放電通道的方式,雷射射束被照射在配 置於放電領域外的高溫電漿原料〔第3 2 ( d )圖〕。將從 雷射射束被照射在高溫電漿原料的時機一直到低溫電漿氣 體的至少一部分到達至放電通道爲止的時間作爲Atg時, 則在時機(Tl+Ati-Atg)或是其以後的機T2,雷射射束是 被照射在高溫電漿原料。在第32圖中,表示時機 T2 = T1+Ati-Atg 的情形。 從時機(Tl+Ati = T2 + Atg )經時間r heat之後,放電作 用於低溫電槳氣體而電子溫度是到達至20〜30eV成爲高溫 電漿,而開始來自該高溫電漿的EUV放射〔第32 ( e )圖 )。 在細放電通道連續性地供應具有相當於上述EUV放 -109- 200908815 射條件的離子密度而低電子溫度的低溫電漿氣體之故,因 而重複進行著自束效果或是依自我磁場的閉合效果。因此 ,細放電通道的直徑是表示變細或變寬的脈衝狀舉動,惟 相對性地被保持在細小狀態。亦即,重複地進行低溫電漿 的自束,繼續著EUV放射。 在放電領域所發生的EUV放射,是藉由EUV聚光鏡 2被反射’而由EUV光取出部7被出射於未圖示的照射部 〇 在此,在利用習知的自束效果的DDP方式,LAGDPP 方式’維持EUV放射的時間是例如200ns以下之故,因 而繼續電流値爲I p的放電通道的時間,爲低溫電漿氣體 的一部分到達至細放電通道的時機(Tl+Ati = T2 + Atg)之 後繼續(20 0ns + r heat)以上的方式,藉由設定脈衝電力供 應手段15及一對電極(第1電極11及第2電極12)所構 成放電電路,與利用習知的自束效果的 DPP方式, LAGDPP方式丰目比較成爲可實現EUV放射的長脈衝化。 在利用習知的自束效果的DPP方式,LAGDPP方式中 ’放電通道的繼續時間最久爲1μ3以下,又,自束初期電 漿而EUV放射繼續的時間(第1 〇圖的期間A )是最久爲 2 0 0ns以下。 依發明人等的實驗經檢證的結果,在本發明中,判明 了至少將放電通道的繼續時間作成i 以上時,可將電流 値Ip以上或ΙΡ2以上的放電通道繼續的時間確實地作成比 2 0 0ns還久。亦即,若將放電通道的繼續時間設定在1μ3 -110- 200908815 以上,則成爲可將EUV放射的繼續時間,確實地作成比 習知的EUV放射的繼續時間(200ns )還久。 又,非自束方式時若也將臨界値設定成爲Ip2,則使 用與上述同樣的結構實現EUV放射的長脈衝化之故,因 而省略詳細的說明。 在本發明中,如欲維持電漿的自束狀態地控制電槳電 流波形的專利文獻6、7的E U V放射的長脈衝化方法的方 式,不必將大電流流在放電空間。又,爲了維持自束效果 ,如第40 ( a )圖所示地不必變更電漿電流I的變形之故 ,因而本方式的放電電流(電漿電流)波形是沒有變極點 (3 )能量射束(雷射射束)的照射時機 在上述的EUV發生順序中,放電電流値到達至臨界 値Ip的時機之後,低溫電漿氣體的至少一部分到達至細 放電通道的方式,設定雷射射束照射於高溫電漿原料的時 機。 在此,考量在放電發生後放電電流値到達至臨界値Ip 的時機之前,低溫電漿氣體的至少一部分到達至放電通道 的情形(情況A ),或是在放電發生前,低溫電漿氣體的 至少一部分,在放電後到達至生成有放電通道的領域的情 形(情況B )。 在情況A或情況B中,一直到放電電流値到達至臨界 値Ip爲止,無法充分地進行低溫電漿的加熱,結果,成 -111 - 200908815 爲無助於EUV發光的低溫電漿的比率會增加,而會降低 EUV放射效率。 又,在情況A或情況B中,在一直到放電電流値到達 至臨界値Ip爲止的期間,在放電後生成有放電通道的領 域,作爲穩定流被選擇性地供應的高溫電漿原料的低溫電 槳氣體會膨脹而降低密度。因此,放電領域的高溫電漿原 料的密度,是接近於第3 8圖的初期條件。在此種狀態下 ,放電通道的直徑是變粗之故,因而爲了將放電通道作成 細小而成爲高溫電漿,作爲放電電流成爲需要大電流。 尤其是,在情況B中,在放電前供應有低溫電漿氣體 之故,因而藉由經膨脹而降低密度的高溫電漿原料氣體的 氣體放電形成有放電通道,放電通道的直徑是成爲比情況 A還粗。因此,爲了將放電通道變細,藉由自束效應將初 期電漿作成高溫電漿,與DPP方式同樣,以某一程度較大 的功率,且高速短脈衝的電流脈衝成爲需要(接近於第3 8 圖的路徑2 )。 在本發明中,如上述地,將放電通道的繼續時間作成 較久的方式形成放電電路之故,因而在情況B極端紫外光 光源裝置中很難實現所需要的電流脈衝。 因此,至少開始放電之後(情況A),較佳爲如第3 2 圖所示地,放電電流値到達至臨界値Ip的時機之後,低 溫電漿氣體的至少一部分到達至細放電通道的方式,設定 雷射射束照射於高溫電漿原料的時機成爲重要。 -112- 200908815 (4 )原料供應系統 如上述地,本發明是將雷射射束等的能量射束照射在 高溫電漿原料,生成具有相當於EUV放射條件的離子密 度且低電子溫度的低溫電漿氣體(電漿內的離子密度爲 1017〜102()Cm_3左右,電子溫度爲leV以下左右)而將該低 溫電漿供應於放電領域。在第3 1圖中,模式地表示高溫 電漿原料爲固體金屬的例子,惟如上述地,高溫電漿原料 是液體狀態也可以。 作爲使用固體狀高溫電漿原料,將低溫電漿氣體供應 於放電領域的原料供應系統的構成例,有例如模式地表示 於第31圖地,構成能將固體金屬(例如Sn )設置於放電 領域近旁的所定領域而照射雷射射束。 作爲其他例子,構成將線狀地成形的高溫電漿原料使 用兩組捲軸,照射著雷射射束時所生成的低溫電漿氣體供 應於可到達至所定領域的空間,俾將雷射射束照射於該線 狀高溫電漿原料。 一方面’作爲使用液體高溫電漿原料,將低溫電槳氣 體供應於放電通道的原料供應系統的構成例,有例如構成 將液體狀高溫電漿原料作成液滴狀,照射著雷射射束時所 生成的低溫電漿氣體朝可到達至所定領域的空間滴下而供 應,當上述液滴狀高溫電漿原料到達至上述空間時,俾將 雷射射束照射在該液滴狀高溫電漿原料。 又’作爲使用固體狀高溫電漿原料的例子,如專利文 獻6所述地’也可考慮以固體的高溫電漿原料(例如Li ) -113- 200908815 構成電極本體,將雷射射束照射於該電極而生成低溫電漿 氣體俾將該低溫電漿氣體供應於放電通道的情形。 又,作爲使用液體狀高溫電漿原料的例子,考量如專 利文獻4所述的構造。亦即,將電極作爲旋轉電極構造, 將被加熱的熔融金屬(metal melt)的液體狀高溫電漿原 料收容於容器。又使得旋轉電極的一部分(周邊部)配置 成浸漬於收容液體狀高溫電漿原料的上述容器中。之後, 藉由旋轉電極,而使得附著於電極的周邊部表面的液體狀 高溫電漿原料被輸送至放電領域。藉由將雷射射束照射於 該被輸送的液體狀高溫電漿原料而生成著低溫電漿氣體, 使得該低溫電漿被供應於放電通道。 然而,該構成是將高溫電漿原料配置於放電領域內者 ,依據此種方式的低溫電漿氣體的生成及供應於放電通道 ,是以如下理由較不理想。 專利文獻4、6所述的構成時,雷射射束照射於電極 表面之際所生成的電漿(或是中性蒸氣)成爲媒介而開始 放電。因此,供應低溫電漿氣體是成爲在放電之前所進行 ,如上述地成爲無助於EUV發光的低溫電漿的比率會增 加,而EUV放射效率會降低。 又,在放電前供應著低溫電漿氣體之故,因而藉由經 膨脹而降低密度的高溫電漿原料氣體放電而形成放電通道 ,放電通道的直徑是變粗。因此,爲了將放電通道作成細 且形成高溫電漿,會成爲需要某一程度大功率的電流。 又,低溫電漿氣體供應於放電通道,是除了依雷射射 -114- 200908815 束的照射的供應之外,也還有依隨著放電進展的驅動電極 的溫度上昇,使得電極本身(或是,附著於電極的液體狀 高溫電漿原料)蒸發所致的供應。 因此,低溫電漿氣體的參數是依存於放電電流而時時 刻刻地變化,EUV放射的輸出是有變動。又,藉由放電中 的放電通道的變動,使得高溫電漿的位置會變動,而在外 觀上高溫電漿的尺寸會變大。 上述的不方便,是高溫電漿原料與電極被一體化,而 低溫電漿氣體的供應成爲爲了依存於雷射射束的照射與放 電電流(電槳電流)的雙方而發生者。 因此,在本發明中,高溫電漿原料與電極是作成不同 體,使得低溫電漿氣體的供應僅依存於雷射射束的照射, 而從放電電流獨立。亦即,如表示於第3 1圖的構成例或 其他已述的構成例(線狀、液滴狀)地,控制低溫電漿氣 體的供應與控制流在電極間的驅動電流爲互相獨立的方式 ,構成原料供應系統。 (5 )整流機構 如上述地,低溫電漿氣體是構成在電極間發生放電之 後,選擇性地供應在放電電流的自我磁場變細的放電通路 。通常,藉由雷射射束的照射從固體材料或液體材料所噴 出的材料蒸氣,是一面朝三維方向膨脹一面進行。因此, 將雷射射束照射在固體或液體的高溫電漿原料而噴出低溫 電槳氣體之際,整流所噴出的低溫電漿氣體的流動,而構 -115- 200908815 成指向性良好的流動,使得設定成該流動集中在細放電通 道附近而被連續供應。 作爲用以整流上述噴出的低低溫電漿氣體的流動的整 流機構,可使用表示於上述第23圖至第25圖者。又,如 第26圖地構成也可以。 (6 )電極位置、高溫電漿原料位置、能量射束(雷 射射束)照射位置的互相關係 如上述地,在本發明中,將低溫電漿氣體藉由雷射射 束到達至放電通道。該位置關係是成爲例如表示於上述第 4圖。 亦即,板狀一對電極11、12隔著所定間隔加以配置 。放電通道是生成於位在一對電極11、12的隔開空間的 放電領域內。 藉由雷射射束2 3照射高溫電槳原料2 1使之氣化,所 生成低溫電槳氣體2 Γ是朝雷射射束所入射的方向側擴展 。所以,藉由將雷射射束23照射在與高溫電漿原料2 1的 放電領域相對的一面’低溫電槳氣體2 1'是被供應於生成 在放電領域的放電通道。 如上述地’藉由雷射射束的照射被供應於放電通道的 低溫電漿氣體中無助於高溫電漿形成者的一部分’或高溫 電漿形成的結果所分解生成的原子狀氣體的聚合的一部分 ,作爲碎屑而與EUV光源裝置內的低溫部接觸,並使之 堆積。 -116- 200908815 在此如第4 ( b )圖所示地,高溫電漿原料2 1對於一 對電極1 1,12對應於未面臨EUV聚光鏡2的空間側時, 如上述地,朝雷射射束2 3而照射所生成的低溫電漿氣體 2Γ ’是朝放電通道及EUV聚光鏡23的方向擴展,而對於 EUV聚光鏡2放出碎屑。如此表示於第4 ( a )圖所示地 ,將高溫電漿原料21配置在一對電極1 1,12與EUV聚 光鏡2之間的空間,且放電領域近旁的空間較佳。 對於如此地所配置的高溫電漿原料2 1,擬將雷射射束 2 3如上述地高溫電漿原料表面的放電領域的一面的—側進 行照射,則低溫電漿氣體2 Γ是朝放電領域的方向擴展, 惟不會朝EUV聚光鏡2的方向擴展。 又’如第5圖所示地,藉由將高溫電漿原料21配置 在對於光軸垂直的平面上的空間,且對於放電領域近旁加 以配置,將雷射射束2 3對於高溫電漿原料2 1從與光軸垂 直的方向加以照射,低溫電漿氣體2 1'是也不會朝Euv聚 光鏡2的方向擴展。由此,雷射射束對於高溫電漿原料21 的照射,及藉由發生在電極1 1、1 2間所生成的碎屑,是 幾乎不會對EUV聚光鏡2進行。 (7 )原料氣化用能量射束的能量 如上述地,雷射射束被照射於高溫電漿原料的時機之 後’一直到低溫電漿氣體的至少一部分到達至放電通道爲 止的時間Atg,是依存於放電通道與高溫電漿原料的位置 ’雷射射束對咼溫電槳原料的照射方向,雷射射束的照射 -117- 200908815 能量,藉由適當設定此些參數’被設定成所定時間。 如以上說明地,本實施例的長脈衝化的EUV發生方 法,是在放電領域事先生成細放電通道,從放電領域外, 對該細放電通道選擇性地供應具相當於EUV放射條件的 離子密度且低電子溫度的低溫電漿氣體(離子密度爲 1017~102QcnT3左右,電子溫度爲leV以下左右)的穩定流 〇 在此,低溫電漿氣體的供應時機,是在放電電流値到 達至所定臨界値(Ip或IP2 )的時機以後,設置成低溫電 漿氣體(離子密度爲1〇17〜l〇2()cm_3左右,電子溫度爲lev 以下左右)到達至細放電通道。 結果,在低溫電漿氣體作用著放電,通過第9圖的路 徑II而形成有滿足EUV放射條件的高溫電漿,俾發生 EUV放射。 在此,對放電通路供應低溫電漿氣體,EUV的放射是 經第6圖的(II)的路徑被實現之故,因而放電電流是不 需要如習知的DDP方式,LAGDPP方式的大電流,即使在 放電領域流著較小電流也可成爲EUV放射。又,即使如 習知地,未實施放電電流的高速短脈衝化,也可成爲將能 量有效率地輸入至電獎。因此,可成爲與習知相比較設定 較長的放電電流脈衝。 EUV放射是某一程度細放電通道繼續著持續的期間。 因此,放電電流脈衝比習知的DPP方式,LAGDPP方式還 長的方式來構成放電電路而將放電電流脈衝作成長脈衝化 -118- 200908815 ,藉由此,成爲可將細放電通道的持續時間作成比習知還 久,結果實現EUV放射的長脈衝化。 在多自束方式中,臨界値Ip是將電流的自我磁場的 壓縮壓力作爲P B,並將電漿的壓力作爲P p時’則如上述 (104 )式所示地設定成爲PB》Pp。 亦即,臨界値Ip是藉由自我磁場成爲可充分壓縮低 溫電漿氣體的電流値。又,上述臨界値Ip也是具有可將 低溫電漿氣體的電子溫度加熱或20〜30eV或是其以上的能 量的電流値。在此,在放電電流値成爲ip的時機中’流 動放電領域的放電通道的直徑是成爲充分細小。 藉由低溫電漿氣體對於細放電通道的連續性供應’重 複地進行自束效應或依自我磁場的閉合效果。此時’細放 電通道的直徑是變細或變寬地表示脈衝狀舉動,惟相對地 被保持著細小狀態。 此種低溫電漿氣體的自束效應或依自我磁場的閉合效 果的重複,是放電電流繼續的期間仍持續。 如上述地,在本發明中,與習知相比較可將放電電流 脈衝較長,而長期間地可維持連續性自束或依自我磁場的 閉合效果之故,因而可實現EUV放射的長脈衝化(多自 束方式)。 又,在非自束方式中,臨界値Ip2,是如上述(105 ) 式所示地設定成爲PB》Pp。亦即,臨界値Ip2是藉由自我 磁場較弱地壓縮低溫電漿氣體(被維持在低溫電漿氣體膨 脹而離子密度未減少的程度)的電流値。又,上述臨界値 -119- 200908815Tl,=:Td + dl+(Atd-Ati-Atg) + (a + P) + (tvcal+tical) The control unit 26 of the EUV light source device is stable in charging of the charger until the main capacitor C 0 is stabilized. After the time tst, the main trigger signal is sent. The timing at this time is taken as step S318 of the Td1! diagram and S409 of the 29th figure. Further, the timing T d ' of the segment in which the main trigger signal is transmitted to the pulse power supply means is used as the reference, and the first thunder is used as the reference with the timing Td' obtained by the equation (2 4 ) (25) The sending timing of the first trigger signal of the shot control unit Τ1', and the step of sending the second trigger signal to the second laser control unit 24b for controlling the operation of the second laser is performed by the above (the laser control of the signal; The figure is obtained as a step of the base-feed-time-injection control... (25) charging timing, the 27th exchange hand) 23b source 24a is output timing -101 - 200908815 T21, the first trigger signal, the second trigger signal The signal is transmitted to the first laser control unit 23b and the second laser control unit 24b (step S3 19 of Fig. 27, S414 and S417 of Fig. 29). Then, the process proceeds to step S 3 1 of Fig. 28. 3. As described above, the voltage counter until the voltage between the electrodes reaches the critical threshold pVp is operated at the start of the main trigger signal, and the discharge current is measured to the critical value at the beginning of the second trigger signal. The current counter up to Ip is activated (Fig. 29 S410, S412) Then, the voltage monitor is detected by the unillustrated voltage monitor to stop the voltage monitor, and the voltage monitor is stopped. Further, the discharge current is detected by a current monitor not shown. When the timing of reaching the critical threshold Ip is reached, the current monitor is stopped (step S 3 1 4 of FIG. 28, S412, S416 of FIG. 9). Here, in step S311, when the timing is Τ (Γ送出出The main trigger signal is turned on as described above (S409, S410 of Fig. 29), and after the time Atd, the voltage between the electrodes reaches the critical threshold pVp (S410, S411 of Fig. 29) ° in step SH2. 'At the timing T2' according to the equation (5), the second trigger signal is sent to the second laser control unit 24b, and in the timing T2 after the timing at which the voltage between the electrodes reaches the threshold 値Vp (Td + Md ), The second laser beam (starting laser beam) 24 is irradiated in the discharge field (S413, S414 in Fig. 29). The second laser beam is irradiated in the discharge field, and discharge starts in the discharge field. After the start of discharge, after Ati, the discharge current reaches the upper -102-200908815 The threshold 値Ip (S414, S415 of Fig. 29). As described above, in step S312, the first trigger signal is sent to the first laser control unit 2 in accordance with the timing T1· of the equation (11). b. As a result, the timing T1 and the first laser beam (raw material laser beam) 23 in the period of (T2 + Ati-Atg) to (T2 + Ati + Atp-Atg) are irradiated (Fig. 29) S415, S417, S418). Thereby, in the steps S318 and S319', the control unit of the EUV light source device transmits the result of each of the trigger signals, and the position of the discharge channel is defined at the predetermined position. Further, in the discharge channel whose position is defined, the spatial density distribution is a discharge necessary for the EUV emission of a predetermined intensity in order to obtain the discharge current in a state where at least a part of the vaporized raw material of the predetermined distribution reaches the discharge channel. The discharge occurs in a manner in which the lower limit of the current 値 is equal to or higher. The discharge occurs between the edge portions of the peripheral edge portions of the first rotating electrode 11 and the second rotating electrode 12, and plasma is formed, and the plasma is heated and excited by the pulsed large current flowing through the plasma to become high temperature. Then, EUV radiation having a wavelength of 13.5 nm is generated from the high temperature plasma (step S3 I 5 of Fig. 28, S419 of Fig. 29). The EUV radiation emitted from the plasma is collected by the oblique-incident EUV condensing mirror 2 disposed in the condensing space 1 b through the opening provided in the partition wall 1 c and the wheel-type collector 3, and is provided. The EUV light extraction unit 7 of the chamber 1 is guided to an illumination optical system of an exposure apparatus (not shown). Hereinafter, during the period in which the exposure process is continued, the process between steps S 3 06 to S3 15 is repeated. When the exposure process is completed, the process ends after steps S315 - 103 - 200908815. By operating as described above, by irradiating the first laser beam 2 3 as described above, the spatial density distribution of the vaporized raw material supplied to the discharge region is set to generate EUV radiation as efficiently as possible. . Further, by concentrating the second laser beam 24 at a predetermined position in the discharge area, the position of the discharge path is defined at a position at which the laser focus is set. Therefore, the positional stability of the occurrence point of EUV radiation can be improved. Since the irradiation timing of the first laser beam 23 and the irradiation timing of the second laser beam 24 are set as described above, the spatial density distribution is at least a part of the predetermined distribution of the vaporized material reaching the discharge channel. When the discharge current is equal to or higher than the lower limit of the discharge current 必需 necessary for EUV emission of a predetermined intensity, discharge occurs. As a result, EUV radiation with excellent efficiency can be achieved. Further, after the output of the main trigger signal, the time until the voltage between the electrodes reaches the critical threshold 値Vp and the output of the second trigger signal, the time until the discharge current reaches the critical threshold 値Ip becomes constant, and the feedback control is performed. Therefore, even if the operation of the semiconductor switching element using the solid-state switch SW as the switching means of the pulse power supply means is uneven, it is possible to reliably achieve EUV radiation with excellent efficiency. (6) Adjusting the irradiation It is also possible to adjust the irradiation of the first energy beam 2 3 so that the discharge is likely to occur between the discharge electrodes. Hereinafter, measures for improving the startability of such discharge will be briefly described. -104-200908815 As an example, the procedure for adjusting the irradiation is described in the "EUV light source device of the embodiment shown in Figs. 9 and 10". The timing chart when the adjustment illumination is not performed in the 30th chart. As described above, in the EUV light source device of the above-described embodiment, the first laser beam (raw material laser beam) 23 for supplying the raw material and the second energy beam for the discharge start are appropriately set (starting) When the irradiation timing of the laser beam 24 is used, at least a part of the vaporized high-temperature plasma raw material having a predetermined spatial density distribution reaches the discharge field, and the discharge current set in the discharge field is set to a predetermined threshold.値 Above. In the present procedure, the first laser beam 23 is irradiated once before the first laser beam (raw material laser beam) 23 appropriately set by the irradiation timing of the second laser beam 24 is irradiated. Above the raw materials in high temperature electric paddles. In the example shown in Fig. 30, the first laser beam 23 is irradiated three times before the first laser beam 23 appropriately set with the irradiation timing of the second laser beam 24. Irradiation of such a laser beam is referred to as adjustment illumination. If the adjusted irradiation is carried out, the vaporized high-temperature plasma raw material reaches the discharge field. The first laser beam (raw material laser beam) 23 that is adjusted to be irradiated has no correlation with the second laser beam 24 for starting the discharge, and the second laser beam 24 is not irradiated. A part of the vaporized high-temperature plasma raw material that has reached the discharge region is attached to the first discharge electrode 11 and the second discharge electrode 12 . In this state, when the second energy beam 2 3 is irradiated at a predetermined position in the discharge region, it adheres to a part of the high-temperature plasma material of the first discharge electrode 11 and the second discharge electrode 12 located in the vicinity of the discharge region. It was gasified by -105- 200908815. The vaporized raw material contributes to the discharge, so that discharge is reliably generated between the discharge electrodes. That is, the startability of the discharge is improved. Further, a part of the high-temperature plasma material to be adhered to the discharge electrodes n and 12 is vaporized. At least a part of the second energy beam 24 is required to be irradiated to the high-temperature plasma material of the discharge electrode 1 1,1 2 . . 3. Long Pulsed The following description will be made on the long pulse of EUV radiation of the present invention. In the following, (1) a basic configuration example of an EUV light source device embodying the EUV generating method of the present invention, (2) an EUV generation sequence of the present invention, and (3) an irradiation timing of an energy beam (laser beam), ( 4) raw material supply system, (5) rectification mechanism, (6) electrode position, high-temperature plasma raw material supply position 'energy beam (laser beam) irradiation position relationship' (7) energy beam for raw material gasification The energy, (8) specific structural examples are explained. Hereinafter, the laser beam will be described as an example of the energy beam, but the energy beam may be an electron beam or the like. (1) Basic configuration example of an EUV light source device embodying the EUV generating method of the present invention First, a basic configuration example will be described. Fig. 3 is a view showing a basic configuration of a long pulsed EUV light source device according to the present invention. In the same figure, a first electrode 11 - 106 - 200908815 and a second electrode 12 are provided inside the cavity 1 of the discharge vessel. . For example, the first electrode 11 is a cathode, and the second electrode 12 is an anode. The second electrode 12 is grounded. That is, a high voltage of a negative polarity is applied between the electrodes. A pulse power supply means 15 is connected to the two electrodes. The pulse power supply means 15 is for flowing a long pulse width between the electrodes, for example, a PFN (Pulse Forming Network) circuit. Further, a high-temperature electric paddle material 21 is provided outside the discharge region in the vicinity of the pair of electrodes. As the high-temperature plasma raw material 21, for example, a metal such as tin (Sn) or lithium (Li) is used. These are either solid or liquid. Fig. 31 schematically shows an example in which the high-temperature plasma raw material 21 is a solid metal. In order to generate a low temperature plasma (gasified high temperature plasma material), a laser source 23a is used. The laser beam 23 emitted by the laser source 23a is a high-temperature plasma material 21 that is guided to the inside of the chamber 1 and is irradiated to a solid or liquid. The irradiation energy of the laser is a high-temperature plasma raw material that vaporizes solid or liquid, but is an energy that does not rise to an electron temperature, for example, a range of l 〇 8 W/cm 2 to 1 019 W/cm 2 . When the high-temperature plasma material 21 is irradiated with the laser beam, at least a part of the high-temperature plasma material 21 is vaporized, and the low-temperature plasma 21' is ejected. By appropriately setting the conditions of the irradiated laser beam, for example, from the solid high-temperature plasma raw material 2 1 to about 10 μ5, the vaporized high-temperature plasma raw material (low-temperature plasma gas 2 1 ' is continuously ejected. ). As described above, the low-temperature plasma gas is a discharge channel formed in advance between the electrodes by a state in which the ion density in the plasma is about 1 〇 17 to 102 C) cnr 3 and the electron temperature is about lev or less. . -107- 200908815 And the 'discharge channel is thinned by the self-magnetic field of the discharge current. The irradiation of the laser beam 'discharged from the solid material or the liquid material' is performed while expanding in a three-dimensional direction. Therefore, the low-temperature plasma gas discharged from the hair-emitting material 21 is rectified by the illustration of the rectifying mechanism' to be a stable flow excellent in directivity. Also, an example of the structure will be explained later. (2) EUV generation order of the present invention The generation method of the present invention will be described using the timing chart shown in Fig. 3 . As an example, the multi-self-bundling method is taken as an example. First, in the switching means (for example, igBT) input (Td) for applying pulse power to the pair of electrodes 1 1 and 2, the switching means (Td) has a trigger signal [32(a)]. 〇With this 'the voltage between the electrodes will rise [Fig. 32(b)]. When the voltage reaches a certain threshold 値Vp, the timing Tl (=Td + Atd) is discharged [Fig. 32(c)]. The occurrence of discharge is performed by the operation of the discharge starting means shown in Fig. 31. The threshold 値Vp is a voltage 时 when the discharge current 流动 flowing during discharge becomes a critical 値Ip or more (or Ip2 or more in the non-beam mode). That is, when the discharge is less than 値V p , the peak of the discharge current is not reached to Ip or Ip2. The discharge current is started to flow between the electrodes by the timing T1 to form an electric passage. In addition, in the timing of the Ati (ΤΙ +Δίί), the electric discharge of the material is high, and the pulse timing of the EUV of the flow machine is such that the occurrence of a thumbnail occurs. The critical boundary has a discharge 値-108- 200908815 is reaching the critical point.値Ip. As described above, the critical enthalpy Ip is such that the compression pressure of the self-magnetic field according to the current is PB, and when the pressure of the plasma is Pp, it is set to PB "Pp" (formula (104) above). That is, the low temperature plasma gas can be made into a sufficiently compressed current enthalpy by the self magnetic field. Further, the above-mentioned critical enthalpy Ip also has an electron temperature of a low-temperature plasma gas (the ion density in the plasma is about 1 〇 17 to l 〇 2 () ciir 3 and the electron temperature is about lev or less), and can be heated to 20 〜 3 Current of energy of OeV or above. Further, in the timing (Tl+Ati), the diameter of the discharge channel in the flow discharge region is sufficiently small. After this timing (Τ1+ΔΗ), at least a part of the low-temperature plasma gas having an ion density corresponding to the EUV radiation condition and a low electron temperature selectively reaches the fine discharge channel, and the laser beam is irradiated in the arrangement. High-temperature plasma raw materials outside the discharge field [Fig. 3 2 (d)]. The timing from when the laser beam is irradiated to the high-temperature plasma material until at least a portion of the low-temperature plasma gas reaches the discharge channel is Atg, then at the timing (Tl+Ati-Atg) or later Machine T2, the laser beam is irradiated with high temperature plasma material. In Fig. 32, the case where the timing T2 = T1 + Ati - Atg is shown. From the timing (Tl+Ati = T2 + Atg) after the time r heat, the discharge acts on the low-temperature electric propeller gas and the electron temperature reaches 20~30eV to become the high-temperature plasma, and the EUV emission from the high-temperature plasma is started. 32 (e) Figure). The low-temperature plasma gas having the ion density corresponding to the EUV release-109-200908815 emission condition and the low electron temperature is continuously supplied in the fine discharge channel, thereby repeating the self-beam effect or the closing effect according to the self-magnetic field. . Therefore, the diameter of the fine discharge passage is a pulse-like behavior indicating a thinning or widening, but is relatively maintained in a small state. That is, the self-beam of the low temperature plasma is repeatedly performed, and the EUV radiation is continued. The EUV radiation generated in the discharge field is reflected by the EUV condensing mirror 2, and is emitted from the EUV light extraction unit 7 to an irradiation unit (not shown). Here, the DDP method using a conventional self-beam effect is used. The LAGDPP mode 'maintains EUV emission time is, for example, 200 ns or less, so the time to continue the current 値 to the discharge channel of I p is the timing at which a part of the low-temperature plasma gas reaches the fine discharge channel (Tl+Ati = T2 + Atg) After continuing (20 0 ns + r heat) or more, a discharge circuit composed of the pulse power supply means 15 and the pair of electrodes (the first electrode 11 and the second electrode 12) is set, and a conventional self-beam effect is utilized. The DPP method, the LAGDPP method, has become a long pulse that can achieve EUV radiation. In the DPP method using the conventional self-beam effect, in the LAGDPP method, the continuation time of the discharge channel is at most 1 μ3 or less, and the time from the initial stage of the beam to the EUV emission (the period A of the first map) is The longest is below 2 0 ns. According to the results of the test by the inventors, it has been found that, at least when the continuation time of the discharge channel is at least i, the time at which the discharge channel of the current 値Ip or more or ΙΡ2 or more can continue can be surely made. 2 0 0ns is still a long time. In other words, when the continuation time of the discharge channel is set to 1 μ3 - 110 - 200908815 or more, the continuation time of EUV radiation can be made to be longer than the continuation time (200 ns) of the conventional EUV radiation. In addition, when the threshold 値 is set to Ip2 in the case of the non-self-beam method, the long-pulse of the EUV radiation is realized by the same configuration as described above, and thus detailed description thereof will be omitted. In the present invention, in the method of the long pulse method of E U V radiation of Patent Documents 6 and 7 for controlling the electric current waveform of the electric current in the self-bundling state of the plasma, it is not necessary to flow a large current in the discharge space. Moreover, in order to maintain the self-beaming effect, it is not necessary to change the deformation of the plasma current I as shown in Fig. 40 (a), so the discharge current (plasma current) waveform of the present mode has no pole-changing point (3) energy shot. Irradiation timing of the beam (laser beam) In the above-described EUV generation sequence, after the discharge current 値 reaches the timing of the critical 値Ip, at least a part of the low-temperature plasma gas reaches the fine discharge channel, and the laser beam is set. The timing of irradiation to high temperature plasma raw materials. Here, consider the case where at least a part of the low-temperature plasma gas reaches the discharge channel (case A) before the discharge current 値 reaches the critical 値Ip after the discharge occurs, or before the discharge occurs, the low-temperature plasma gas At least a portion, after discharge, reaches the field where the discharge channel is formed (case B). In Case A or Case B, until the discharge current 値 reaches the critical threshold 値Ip, the low-temperature plasma cannot be sufficiently heated, and as a result, the ratio of the low-temperature plasma that does not contribute to EUV luminescence is -111 - 200908815. Increase, but will reduce EUV radiation efficiency. Further, in the case A or the case B, in the period until the discharge current 値 reaches the critical 値Ip, the field in which the discharge channel is formed after the discharge is used as the low temperature of the high-temperature plasma raw material selectively supplied as the steady flow. The electric paddle gas expands to reduce the density. Therefore, the density of the high-temperature plasma material in the discharge field is close to the initial condition of Fig. 38. In this state, the diameter of the discharge channel is thickened. Therefore, in order to make the discharge channel fine and become a high-temperature plasma, a large current is required as a discharge current. In particular, in case B, a low-temperature plasma gas is supplied before discharge, and thus a discharge channel is formed by gas discharge of a high-temperature plasma raw material gas which is reduced in density by expansion, and the diameter of the discharge passage is a ratio A is still thick. Therefore, in order to thin the discharge channel, the initial plasma is made into a high-temperature plasma by the self-beam effect. As with the DPP method, a certain amount of power is required, and a high-speed short-pulse current pulse is required (close to the first 3 8 Figure of the path 2). In the present invention, as described above, the discharge circuit is formed in such a manner that the continuation time of the discharge path is made longer, and thus it is difficult to achieve the required current pulse in the case B extreme ultraviolet light source device. Therefore, after at least the start of discharge (Case A), preferably, as shown in FIG. 3, after the discharge current 値 reaches the timing of the critical 値Ip, at least a part of the low-temperature plasma gas reaches the mode of the fine discharge channel, It is important to set the timing at which the laser beam is irradiated to the high temperature plasma material. -112- 200908815 (4) Raw material supply system As described above, the present invention irradiates an energy beam such as a laser beam to a high-temperature plasma raw material to generate an ion density having an EUV radiation condition and a low electron temperature. The plasma gas (the ion density in the plasma is about 1017 to 102 () Cm_3, and the electron temperature is about leV or less), and the low-temperature plasma is supplied to the discharge field. In Fig. 3, the high-temperature plasma raw material is exemplarily shown as a solid metal. However, as described above, the high-temperature plasma raw material may be in a liquid state. As a configuration example of a raw material supply system in which a low-temperature plasma gas is supplied to a discharge field using a solid high-temperature plasma raw material, for example, it is schematically shown in FIG. 31, and a solid metal (for example, Sn) can be disposed in a discharge field. The laser beam is illuminated by the nearby field. As another example, a high-temperature plasma material that is linearly shaped is used to use two sets of reels, and a low-temperature plasma gas generated when a laser beam is irradiated is supplied to a space that can reach a predetermined field, and a laser beam is used. Irradiation on the linear high temperature plasma raw material. On the other hand, as a configuration example of a raw material supply system that supplies a low-temperature electric propeller gas to a discharge passage using a liquid high-temperature plasma raw material, for example, a liquid high-temperature plasma raw material is formed into a droplet shape, and a laser beam is irradiated. The generated low-temperature plasma gas is supplied dropwise to a space that can reach a predetermined area, and when the droplet-shaped high-temperature plasma raw material reaches the space, the laser beam is irradiated to the droplet-shaped high-temperature plasma raw material. . Further, as an example of using a solid high-temperature plasma raw material, as described in Patent Document 6, it is also conceivable that a solid high-temperature plasma raw material (for example, Li)-113-200908815 constitutes an electrode body, and the laser beam is irradiated. This electrode generates a low-temperature plasma gas and supplies the low-temperature plasma gas to the discharge channel. Further, as an example of using a liquid high-temperature plasma raw material, the structure described in Patent Document 4 is considered. That is, the electrode is used as a rotating electrode structure, and a liquid high-temperature plasma raw material of a heated metal melt is housed in a container. Further, a part (peripheral portion) of the rotating electrode is placed in the container in which the liquid high-temperature plasma raw material is accommodated. Thereafter, the liquid high-temperature plasma raw material adhering to the surface of the peripheral portion of the electrode is transported to the discharge region by rotating the electrode. A low temperature plasma gas is generated by irradiating a laser beam onto the conveyed liquid high temperature plasma material such that the low temperature plasma is supplied to the discharge channel. However, this configuration is such that the high-temperature plasma raw material is disposed in the discharge field, and the generation of the low-temperature plasma gas according to this method and supply to the discharge channel are less desirable for the following reasons. In the configuration described in Patent Documents 4 and 6, the plasma (or neutral vapor) generated when the laser beam is irradiated onto the surface of the electrode serves as a medium to start discharge. Therefore, the supply of the low-temperature plasma gas is performed before the discharge, and the ratio of the low-temperature plasma which does not contribute to the EUV emission as described above increases, and the EUV radiation efficiency decreases. Further, since the low-temperature plasma gas is supplied before the discharge, the discharge path is formed by discharge of the high-temperature plasma material gas which is reduced in density by expansion, and the diameter of the discharge channel becomes thick. Therefore, in order to make the discharge channel fine and form a high temperature plasma, it becomes a current that requires a certain amount of high power. Moreover, the low-temperature plasma gas is supplied to the discharge channel, in addition to the supply of the irradiation of the beam of 114-200908815, and the temperature rise of the driving electrode according to the progress of the discharge, so that the electrode itself (or Supply of liquid high-temperature plasma raw material attached to the electrode by evaporation. Therefore, the parameters of the low-temperature plasma gas vary from time to time depending on the discharge current, and the output of the EUV radiation varies. Further, the position of the high-temperature plasma changes due to the fluctuation of the discharge path during discharge, and the size of the high-temperature plasma increases in appearance. The above inconvenience is that the high-temperature plasma raw material and the electrode are integrated, and the supply of the low-temperature plasma gas is caused by both the irradiation of the laser beam and the discharge current (electric current). Therefore, in the present invention, the high-temperature plasma raw material and the electrode are made different, so that the supply of the low-temperature plasma gas depends only on the irradiation of the laser beam, and is independent from the discharge current. That is, as shown in the configuration example of FIG. 31 or other configuration examples (linear, droplet-shaped), the supply of the low-temperature plasma gas and the control current between the electrodes are controlled independently of each other. The way to form a raw material supply system. (5) Rectifying mechanism As described above, the low-temperature plasma gas constitutes a discharge path in which the self-magnetic field of the discharge current is selectively supplied after the discharge between the electrodes is formed. Usually, the material vapor ejected from the solid material or the liquid material by the irradiation of the laser beam is carried out while expanding in a three-dimensional direction. Therefore, when the laser beam is irradiated to the high-temperature plasma raw material of the solid or liquid to eject the low-temperature electric propeller gas, the flow of the low-temperature plasma gas ejected is rectified, and the flow of the directivity is good, and the configuration is -115-200908815. It is set such that the flow is concentrated in the vicinity of the fine discharge passage and is continuously supplied. As the rectifying means for rectifying the flow of the above-described discharged low-temperature plasma gas, those shown in Figs. 23 to 25 can be used. Further, it may be configured as shown in Fig. 26. (6) Correlation of electrode position, high-temperature plasma material position, and energy beam (laser beam) irradiation position. As described above, in the present invention, the low-temperature plasma gas reaches the discharge channel by the laser beam. . This positional relationship is shown, for example, in the above fourth figure. That is, the plate-shaped pair of electrodes 11, 12 are arranged at predetermined intervals. The discharge channel is formed in the discharge region of the space in which the pair of electrodes 11, 12 are spaced apart. The high-temperature electric paddle material 2 1 is irradiated by the laser beam 2 3 to vaporize it, and the generated low-temperature electric paddle gas 2 扩展 is expanded toward the direction in which the laser beam is incident. Therefore, the laser beam 23 is irradiated on the side opposite to the discharge region of the high-temperature plasma material 2 1 'the low-temperature electric paddle gas 2 1 ' is supplied to the discharge passage formed in the discharge region. As described above, the polymerization of atomic gas generated by the decomposition of the low-temperature plasma gas supplied to the discharge channel by the irradiation of the laser beam does not contribute to the formation of the high-temperature plasma formation or the formation of the high-temperature plasma. A part of the material is in contact with the low temperature portion in the EUV light source device as a chip and is deposited. -116- 200908815 Here, as shown in Fig. 4(b), when the high-temperature plasma raw material 2 1 corresponds to a pair of electrodes 1 1,12 which are not facing the space side of the EUV condensing mirror 2, as described above, toward the laser The low-temperature plasma gas 2 Γ ' generated by the irradiation of the beam 2 3 is expanded toward the discharge passage and the EUV condensing mirror 23, and the debris is discharged to the EUV condensing mirror 2. As shown in Fig. 4(a), the high-temperature plasma raw material 21 is disposed in a space between the pair of electrodes 112, 12 and the EUV condensing mirror 2, and a space in the vicinity of the discharge region is preferable. For the thus configured high-temperature plasma raw material 2 1, it is intended to irradiate the laser beam 2 3 to the side of the discharge region of the surface of the high-temperature plasma raw material described above, and the low-temperature plasma gas 2 Γ is discharged toward the discharge. The direction of the field expands, but does not extend in the direction of the EUV condenser 2. Further, as shown in Fig. 5, by arranging the high-temperature plasma raw material 21 in a space on a plane perpendicular to the optical axis, and arranging for the vicinity of the discharge region, the laser beam 2 is applied to the high-temperature plasma raw material. 2 1 is irradiated from a direction perpendicular to the optical axis, and the low-temperature plasma gas 2 1 ' does not expand in the direction of the Euv concentrating mirror 2 . Thus, the irradiation of the laser beam to the high-temperature plasma raw material 21 and the generation of debris generated between the electrodes 1 1 and 12 are hardly performed on the EUV condensing mirror 2. (7) The energy of the energy beam for the gasification of the raw material is as described above, after the time when the laser beam is irradiated to the high-temperature plasma raw material, until the time at which at least a part of the low-temperature plasma gas reaches the discharge channel, Atg Dependent on the position of the discharge channel and the high-temperature plasma raw material 'The direction of the laser beam to the temperature of the electric paddle material, the irradiation of the laser beam -117- 200908815 Energy, set by the appropriate setting of these parameters' is set to time. As described above, the long pulsed EUV generating method of the present embodiment generates a fine discharge channel in advance in the discharge region, and selectively supplies the ion density corresponding to the EUV radiation condition to the fine discharge channel from outside the discharge region. The low-electron temperature low-temperature plasma gas (the ion density is about 1017~102QcnT3, and the electron temperature is about leV or less) is stable. Here, the timing of the supply of the low-temperature plasma gas is that the discharge current 値 reaches the predetermined threshold. After the timing of (Ip or IP2), it is set to a low-temperature plasma gas (the ion density is about 1 〇 17 to l 〇 2 (cm_3), and the electron temperature is about lev or less) to reach the fine discharge channel. As a result, discharge is applied to the low-temperature plasma gas, and a high-temperature plasma satisfying the EUV radiation condition is formed by the path II of Fig. 9, and EUV radiation occurs. Here, the low-temperature plasma gas is supplied to the discharge path, and the EUV radiation is realized by the path of (II) in FIG. 6, so that the discharge current does not require a conventional DDP method or a large current of the LAGDPP method. EUV radiation can be achieved even if a small current flows in the discharge field. Further, even if it is conventionally practiced that the high-speed short pulse of the discharge current is not performed, the energy can be efficiently input to the electric prize. Therefore, it is possible to set a longer discharge current pulse than in the conventional case. EUV radiation is a period in which a certain degree of fine discharge path continues. Therefore, the discharge current pulse is configured to form a discharge circuit in a manner that is longer than the conventional DPP method and the LAGDPP method, and the discharge current pulse is pulsed-118-200908815, whereby the duration of the fine discharge channel can be made. Longer than conventional, the result is a long pulse of EUV radiation. In the multi-self-beam method, the critical enthalpy Ip is set to PB "Pp" as shown in the above formula (104) when the compression pressure of the self-magnetic field of the current is P B and the pressure of the plasma is P p '. That is, the critical enthalpy Ip is a current 可 which can sufficiently compress the low temperature plasma gas by the self magnetic field. Further, the above-mentioned critical enthalpy Ip is also a current 具有 which can heat the electron temperature of the low-temperature plasma gas or an energy of 20 to 30 eV or more. Here, in the timing at which the discharge current 値 becomes ip, the diameter of the discharge passage in the field of the flow discharge is sufficiently small. The self-beaming effect or the self-magnetic field closing effect is repeatedly performed by the continuous supply of the low-temperature plasma gas to the fine discharge channel. At this time, the diameter of the fine discharge passage is tapered or widened to indicate a pulse-like behavior, but is relatively kept in a small state. The self-beaming effect of such a low-temperature plasma gas or the repetition of the closing effect of the self-magnetic field is continued during the period in which the discharge current continues. As described above, in the present invention, the discharge current pulse can be made longer than that of the conventional one, and the continuous self-beam or the self-magnetic field can be maintained for a long period of time, so that long pulses of EUV radiation can be realized. (multiple self-bundling). Further, in the non-self-bundling method, the critical 値Ip2 is set to PB "Pp" as shown in the above formula (105). That is, the critical enthalpy Ip2 is a current enthalpy in which the low-temperature plasma gas (maintained at a low temperature plasma gas expansion and the ion density is not reduced) is weakly compressed by the self magnetic field. Again, the above threshold 値 -119- 200908815
Ip2也是具有可將低溫電漿氣體的電子溫度加熱或 20〜3 OeV或是其以上的能量的電流値。在此,在放電電流 値成爲Ip2的時機中,流動放電領域的放電通道的直徑是 成爲細小。 藉由低溫電漿氣體對於細放電通道的連續性供應,低 溫電漿氣體是膨脹而在被維持在未減少離子密度程度的狀Ip2 is also a current having a temperature at which the electron temperature of the low-temperature plasma gas is heated or 20 to 3 OeV or more. Here, in the timing at which the discharge current 値 becomes Ip2, the diameter of the discharge channel in the flow discharge region becomes fine. By the continuous supply of low-temperature plasma gas to the fine discharge channel, the low-temperature plasma gas is expanded while being maintained at a level that does not reduce the ion density.
態下被加熱而成爲高溫電漿,由該高溫電漿被放射著EUV 〇 此種一面維持低溫電漿氣體的離子濃度一面加熱,是 放電電流繼續的期間仍持續。如上述地,在本發明中,與 習知相比較可將放電電流脈衝較長,而持續低溫電漿的加 熱,能長期間維持在EUV放射所必需的電漿的溫度之故 ,因而可實現EUV放射的長脈衝化(非自束方式)。 又,在非自束方式中,放電通道的直徑比多自束方式 還大之故,因而高溫電漿的尺寸也比多自束方式者變大。 依發明人的實驗的檢證的結果,判明了在本發明中, 將放電通道作成至少1 以上時,則可將電流値爲Ip以 上或Ip2以上的放電通道繼續的時間作成確實地比200ns 還久。亦即,當將放電通道繼續時間設定在1 以上,則 成爲可將EUV放射的繼續時間作成確實地比習知的EUV 放射的繼續時間(200ns )還久。 如上述地,放電電流是不需要如習知的DPP方式、 LAGDPP方式的大電流,又不必實施放電電流的高速短脈 衝化。因此,成爲可將給予電極的熱負荷與習知相比較作 -120- 200908815 成較小,而成爲可抑制碎屑的發生。 又,在本發明中,如習知的長脈衝化技術地,維持高 溫電漿的自束狀態的方式,不必控制電漿電流波形之故’ 因而在放電空間不必流動大電流。又,爲了維持自束效應 ,不必變更電漿電流的波形之故,因而不需要高精度的電 流控制。亦即,本方式的放電電流(電漿電流)波形是未 具有變極點。 又,控制低溫電漿氣體的供應與控制流在電極間的驅 動電流互相地獨立地,構成原料供應系統較佳。 藉由作成如此地構成,低溫電漿的供應不會受到放電 電流(電漿電流)的影響之故,因而提昇EUV放射的穩 定性。 又,將高溫電漿原料配置(或是供應)於一對電極與 EUV聚光鏡之間的空間,而將雷射射束照射在面臨於高溫 電漿原料表面的放電領域的一側較佳。 藉由作成如此,低溫電漿氣體是朝放電領域的方向擴 展,惟不會朝EUV聚光鏡的方向擴展。因此,成爲可抑 制碎屑進行至EUV聚光鏡的情形。 以下,針對於長脈衝化的EUV光源裝置的具體性構 成例加以說明。 如上述地,本實施例的EUV放射方法,是將穩定性 的低溫電漿氣體供應於事先規定的細放電通道,藉由將放 電電流脈衝寬作成比習知還長,俾將EUV放射的脈衝寬 作成長脈衝化。 -121 - 200908815 因此,真空電弧放電,是低溫電漿氣體到達之時機之 後,才徐徐地移行至氣體放電。亦即,最後確立氣體放電 的細放電通道,對於該氣體放電的細放電通道選擇性地供 應著低溫電漿。 在此,氣體放電的放電通道的形成位置,是並不一定 與形成有真空電弧的放電通道的位置相同者。隨著從真空 電弧放電移行至氣體放電,有氣體放電通道的位置變動的 情形。 亦即,氣體放電的放電通道是被形成在真空電弧放電 的放電通道位置的近旁者,惟氣體放電通道的位置穩定性 並不一定爲高精度。 將EUV光源使用作爲曝光用光源時,被要求著高 EUV放射源的穩定性。亦即,被要求著在氣體放電的放電 通道的位置穩定性的更高精度化。 第3 3圖是表示本實施例的電極間的放電起動的樣子 的圖式。在本實施例中,低溫電漿氣體的至少一部分到達 的時機進行電極間的放電起動。 如第3 3圖所示地,將第1雷射射束照射在高溫電漿 原料所生成的低溫電漿氣體的一部分到達至放電領域,而 放電領域成爲以某一程度低濃度的低溫電漿氣體充滿的狀 態的時機。俾將第2雷射射束聚光於放電領域的所定位置 而起動放電。如上述地,放電領域內是以低濃度的低溫電 漿氣體所充滿之故,因而該時機的放電是成爲氣體放電。 在此,在第2雷射射束的焦點近旁,藉由電子放出使 -122- 200908815 得導電率增加。因此,氣體放電的放電通道的位置被劃定 在設定雷射焦點的位置。亦即,氣體放電的位置,是藉由 第2雷射射束被劃定。 如此地,在表示於本實施例的EUV放射方式中,劃 定氣體放電的放電通道本體的位置之故,因而可實現在氣 體放電的放電通道的位置穩定性的高精度化。 (8 )本發明的長脈衝化的EUV光源裝置的實施例 在第34圖及第35圖表示採用本發明的極端紫外光( EUV )發生方法的EUV光源裝置的實施例。 第34圖是表示上述EUV光源裝置的構成圖,EUV放 射是由同圖右邊被取出。第35圖是表示第34圖的電力供 應手段的構成例。 表示於第34圖的EUV光源裝置,是具有放電容器的 腔1。在腔1內具有:將功率輸入於上述的低溫電漿氣體 而生成高溫電漿的放電空間la,及聚光由高溫電漿所放出 的EUV光’藉由設於腔1的EUV光取出部7引導至省略 圖示的曝光裝置的照射光學系的EUV光聚光空間lb。腔 1是與排氣裝置5相連接,腔1內部是藉由該排氣裝置作 成減壓氣氛。 以下,針對於各部的構成加以說明。 (a )放電部 放電部la是隔著絕緣材11〇配置有金屬製的圓盤狀 -123- 200908815 構件的第1放電電極11,及相同金屬製的圓盤狀構件的第 2放電電極12的構造。第1放電電極11的中心與第2放 電電極12的中心是配置在大約同軸上,而第1放電電極 11與第2放電電極12是被固定在僅隔著絕緣材110的厚 度分量的位置。在此,第2放電電極12的直徑比第1放 電電極11的直徑還大。又,第1放電電極11與第2放電 電極12是可旋轉之故,因而在以下,也稱爲旋轉電極。 在第2放電電極12,安裝有電動機22a的旋轉軸22e 。在此,旋轉軸22 e是第1放電電極11的中心與第2放 電電極12的中心位於旋轉軸22e的大約同軸上的方式, 被安裝於第2放電電極12的大約中心。 旋轉軸22e是例如經由機械密封22c被導入至腔1內 。機械密封22c是維持腔1內的減壓氣氛下,容許旋轉軸 2 2 e的旋轉。 在第2放電電極1 2的下方,設有例如以碳刷等所構 成的第1滑動件22g及第2滑動件22h。第2滑動件22h 是與第2放電電極12電性地連接。一方面,第1滑動件 22g是經由貫通第2放電電極12的貫通孔22i而與第1放 電電極1 1電性地連接。 又,藉由省略圖示的絕緣機構,構成在與第1放電電 極11電性地連接的第1滑動件22g與第2放電電極12之 間不會發生絕緣擊穿。 第1滑動件2 2 g與第2滑動件2 2 h是一面滑動也維持 電性連接的電接點,而與脈衝電力供應手段1 5連接。脈 -124- 200908815 衝電力供應手段1 5 ’經由第1滑動件22d、第2滑動件 22e,將第1放電電極1 1與第2放電電極12之間供應著 電力。 亦即,使得電動機22a進行動作而第1放電電極1 1 與第2放電電極12進行運轉,也在第1放電電極Η與第 2放電電極12之間,經由第1滑動件22g、第2滑動件 22h,由脈衝電力供應手段2 5施加有電力。 如第3 1圖所示地,脈衝電力供應手段1 5是包括PFN 電路部,而在負荷的第1放電電極11與第2放電電極12 之間,例如施加脈衝寬比較長的脈衝電力。又從電力供應 手段1 5經由省略圖示的絕緣性電流導入端子進行著第1 滑動件22g,第2滑動件22h。電流導入端子是被安裝於 腔1,而維持腔1內的減壓氣氛下,從電力供應手段成爲 可作成第1滑動件,第2滑動件的電性連接。 金屬製的圓盤狀構件的第1放電電極11,第2放電電 極1 2的周邊部,是構成邊緣形狀。如以後所示地,當藉 由電力供應手段15在第1放電電極11、第2放電電極12 施加有電力,則在兩電極的邊緣形狀部分間發生放電。當 發生放電,則兩電極是成爲高溫之故,因而第1放電電極 1 1、第2放電電極1 2是例如鎢 '鋇、鉅等的高融點金屬 所構成。又,絕緣材20c是例如氮化矽、氮化鋁、金剛石 等所構成。 爲了發生EUV放射而發生放電之際,旋轉第1及第2 放電電極11、12。藉由此,在兩電極中發生放電的位置是 -125- 200908815 每一脈衝地變化。因此,第1及第2放電電極11、12所 受到的熱性負荷是變小,成爲可減少電極的磨耗減少 '放 電電極的長壽命化。 (b )電力供應手段 在第3 5圖表示電力供應手段1 5的等値電路的構成圖 。表示於第3 5圖的電力供應手段1 5的等値電路是由:充 電器CH1,固體開關SW、η段地縱續連接電容器C與線 圏L的組的LC分布常數電路構成的PFN電路部,開關 S W 1所構成。 電力供應手段的動作例是如下所述。首先,充電器 CH1的設定充電電壓被調整成所定値Vin。之後’當固體 開關SW成爲導通時,則構成PFN電路部的η個電容器C 被充電,使得開關SW1成爲導通,則電壓被施加於第1 主放電電極、第2主放電電極間。 然後,若在電極間發生放電,則電流流在電極間。在 此,各電容器C與負荷所製作的線路,是電感分別不相同 之故,因而流在各線路的電流周期是互相不相同。流在電 極間的電流是重疊流在各線路的電路者之故’結果’在電 極間,流著長脈衝寬的電流脈衝。 (c )低溫電漿氣體供應手段 在第34圖中,供應低溫電槳氣體的手段是由:高溫 電槳原料2 1 ’將雷射射束23照射在該高溫電漿原料2 1的 -126- 200908815 雷射源23a,將從雷射射束所照射的高溫電漿原料21所噴 出的低溫電漿氣體整流成指向性優異的穩定流的整流手段 的高速噴射用噴嘴60b所構成。 高溫電槳原料2 1是配置在對於以下所述的EUV聚光 鏡2的光軸大約垂直的平面上的空間,且接近於第1放電 電極1 1、第2放電電極1 2間的放電領域。高速噴射用噴 嘴60b是被設定配置成從噴嘴所噴出的低溫電漿氣體選擇 性地供應於放電領域內的細放電通道所生成的領域。 如此地,藉由配置高溫電漿原料2 1及高速噴射用噴 嘴60b,被供應於放電通道的低溫電漿氣體,是不會朝 EUV聚光鏡2的方向擴展。因此,藉由雷射射束23對於 高溫電漿2 1的照射,及在電極間所發生的放電所生成的 碎屑,是對於EUV聚光鏡2幾乎不會進行。 高速噴射用噴嘴60b,是如第24 ( a )圖所示地,在 內部設有狹窄部的筒狀構件。當通過高速噴射用噴嘴內的 雷射射束23被照射高溫電漿原料2 1,則高溫電漿原料2 1 是被氣化,而生成低溫電漿氣體。在此,在高速噴射用噴 嘴6 0b內部設有狹窄部之故,因而該狹窄部,及雷射射束 照射高溫電漿原料的部分之間的空間內,是藉由低溫電漿 氣體使得壓力急激地上昇。又,低溫電漿氣體是從狹窄部 的開口部分被加速,且作爲指向性優異的高速氣體被噴射 。在此,高速氣體流的噴射方向是依存於高速噴射用噴嘴 的方向。亦即,氣化原料的進行方向,並不依存於雷射射 束對於高溫電漿原料的入射方向。 -127- 200908815 從雷射源2 3 a所放出的雷射射束2 3 ’是經由半 23e,聚光手段23c’設於腔1的入射窗部23d’被 高溫電漿原料2 1。 又,從第2雷射源24a所放出的第2雷射射另 波長,是被設定於透過上述的半透明鏡2 3 e的波長 第2雷射射束2 4是透過半透明鏡2 3 e ’經聚光手|j 設於腔1的入射窗部2 3 d ’被聚光於放電空間的所 〇 對於傾斜大約45度所配置的半透明鏡23e,反 長設定成半透明鏡的反射波長的第1雷射射束23。 由將波長設定在半透明鏡23e的透過波長的第2雷 24對於半透明鏡23e的入射方向,作成與第1雷 2 3的反射方向大約相同方向,成爲可將設於腔1的 部2 3 d作成1個。 作爲放出第1雷射射束23的第1雷射源23a, 2雷射射束24的第2雷射源24a,例如使用著Q ND + -YAG雷射裝置。第1雷射射束23的波長,第 射束24的波長的任一方,是例如藉由波長元件被 換。 如上述地,將第1雷射射束2 3照射於高溫電 2 1所生成的低溫電漿氣體的一部分到達至放電領域 放電領域成爲以某一程度低濃度的能量射束充滿的 時機,將第2雷射射束24聚光在放電領域的所定 起動放電。 透明鏡 入射至 :24的 域,而 2 3c, 定位置 射將波 又,藉 射射束 射射束 入射窗 放出第 開關式 2雷射 波長變 槳原料 ,而在 狀態的 位置而 -128- 200908815 因此,在放電前,必須將第1雷射射束23照射在高 溫電漿原料2 1,而在高電壓從電力供應手段1 5施加於第 1放電電極1 1與第2放電電極12之間的狀態下’將第1 雷射射束23照射在高溫電漿原料21時,有藉由觸發器第 1雷射射束2 3發生放電的情形。所以,對於第1放電電極 與第2放電電極之間的高電壓施加,是必須在第1雷射射 束由第1雷射源被放出之後進行。 (d) EUV放射聚光部 藉由放電空間1 a所放出的EUV放射,是利用設於 EUV放射聚光空間lb的斜入射型的EUV聚光鏡2被聚光 ,而由設於腔1的EUV光取出部7引導至省略圖示的曝 光裝置的照射光學系。 EUV聚光鏡2是例如具備直徑不相同的旋轉橢圓體、 或旋轉拋物體形狀的複數枚鏡。此些鏡是在同一軸上,重 疊配置旋轉中心軸成爲焦點位置大約一致,例如在具有鎳 (Ni )等所成的平滑面的基體材料的反射面側,緻密地塗 敷釕(Ru )、鉬(Mo )、及铑(Rh )等的金屬膜,構成 可良好的反射0°〜25°的斜入射角度的EUV光。 又,在第34圖中,放電空間la表示成比EUV光聚 光空間1 b還大,惟此爲爲了容易瞭解,實際的大小關係 並不是如第34圖。實際上,EUV光聚光空間lb比放電空 間1 a還大。 -129- 200908815 (e)硏屑收集器 在上述的放電空間la與EUV光聚光空間lb之間, 設置爲了防止EUV聚光鏡2的損傷,捕捉與高溫電漿接 觸的第〗、第2放電電極11、12的周邊部藉由高溫電漿被 濺鍍所生成的金屬粉等的硏屑,或起因於放射種籽的Sn 或Li的硏屑等而僅通過EUV光所用的硏屑收集器。 在表示於第34圖的EUV光源裝置中,作爲硏屑收集 器採用著輪型收集器3。針對於輪型收集器3,例如在專 利文獻8記載作爲「金屬片收集器」。輪型收集器是不會 遮住從高溫電槳所放射的EUV的方式,由設置於高溫電 漿發生領域的徑方向的複數板,及支撐該板的環狀支撐體 所構成。輪型收集器3是設置放電空間1 a與EUV聚光鏡 2之間。輪型收集器3內是壓力比周圍氣氛還增加之故, 因而通過輪型收集器的硏屑,是藉由該壓力的影響會減少 運動能。因此,硏屑相撞於EUV聚光鏡之際的能量會減 少,成爲可滅少EUV聚光鏡的損傷。 以下,使用第36圖及第37圖,針對於上述的EUV 光源裝置的動作加以說明。作爲例子,以多自束方式作爲 例子。 EUV光源裝置的控制26是記憶時間資料Atd、Atg、 △ t s、γ、δ οIn the state, it is heated to become a high-temperature plasma, and the high-temperature plasma is irradiated with EUV 此种. While maintaining the ion concentration of the low-temperature plasma gas, it is heated while the discharge current continues. As described above, in the present invention, the discharge current pulse can be made longer than the conventional one, and the heating of the low-temperature plasma can be continued, and the temperature of the plasma necessary for EUV radiation can be maintained for a long period of time, thereby realizing Long pulsed EUV radiation (non-self-bundling). Further, in the non-self-bundling method, the diameter of the discharge channel is larger than that of the multi-self-bundling method, and thus the size of the high-temperature plasma is larger than that of the multi-self-bundling method. According to the results of the examination by the inventors' experiments, it has been found that in the present invention, when the discharge channel is made at least 1 or more, the discharge current of the current 値Ip or more or Ip2 or more can be made to be surely more than 200 ns. Long. That is, when the discharge passage continuation time is set to 1 or more, the continuation time of the EUV emission can be made to be surely longer than the continuation time (200 ns) of the conventional EUV emission. As described above, the discharge current does not require a large current such as the conventional DPP method or the LAGDPP method, and it is not necessary to perform a high-speed short pulse of the discharge current. Therefore, it becomes possible to compare the heat load given to the electrode with the conventional one -120 to 200908815, and it is possible to suppress the occurrence of debris. Further, in the present invention, as in the conventional long-pulsation technique, the manner of maintaining the self-bundling state of the high-temperature plasma does not require control of the plasma current waveform, so that it is not necessary to flow a large current in the discharge space. Further, in order to maintain the self-beam effect, it is not necessary to change the waveform of the plasma current, so that high-precision current control is not required. That is, the discharge current (plasma current) waveform of this mode does not have a pole-changing point. Further, it is preferable to control the supply of the low-temperature plasma gas and the drive current of the control flow between the electrodes independently of each other to constitute a material supply system. With such a configuration, the supply of the low-temperature plasma is not affected by the discharge current (plasma current), thereby improving the stability of the EUV radiation. Further, it is preferable to arrange (or supply) the high-temperature plasma raw material in a space between the pair of electrodes and the EUV condensing mirror, and to irradiate the laser beam on the side facing the discharge region of the surface of the high-temperature plasma raw material. By doing so, the low temperature plasma gas expands toward the discharge field, but does not expand toward the EUV condenser. Therefore, it becomes a case where the debris can be suppressed from proceeding to the EUV condensing mirror. Hereinafter, a specific configuration example of the long pulsed EUV light source device will be described. As described above, the EUV radiation method of the present embodiment supplies a stable low-temperature plasma gas to a predetermined fine discharge channel, and by making the discharge current pulse width longer than the conventional one, the EUV radiation pulse is generated. Wide for growth pulse. -121 - 200908815 Therefore, the vacuum arc discharge is slowly moved to the gas discharge after the timing of the arrival of the low-temperature plasma gas. That is, a fine discharge channel for gas discharge is finally established, and a low-temperature plasma is selectively supplied to the fine discharge channel of the gas discharge. Here, the position at which the discharge channel of the gas discharge is formed is not necessarily the same as the position of the discharge channel in which the vacuum arc is formed. There is a case where the position of the gas discharge passage fluctuates as it moves from the vacuum arc discharge to the gas discharge. That is, the discharge passage of the gas discharge is formed near the position of the discharge passage of the vacuum arc discharge, but the positional stability of the gas discharge passage is not necessarily high precision. When an EUV light source is used as a light source for exposure, stability of a high EUV source is required. That is, it is required to achieve higher accuracy of the positional stability of the discharge path of the gas discharge. Fig. 3 is a view showing a state of discharge starting between electrodes in the present embodiment. In the present embodiment, at least a portion of the low-temperature plasma gas arrives at the timing of discharge starting between the electrodes. As shown in Fig. 3, a part of the low-temperature plasma gas generated by irradiating the first laser beam to the high-temperature plasma raw material reaches the discharge field, and the discharge field becomes a low-temperature plasma having a low concentration to some extent. The timing of the state in which the gas is full.起动 The second laser beam is condensed at a predetermined position in the discharge field to start the discharge. As described above, the discharge field is filled with a low-concentration low-temperature plasma gas, and thus the discharge of the timing is a gas discharge. Here, in the vicinity of the focus of the second laser beam, the conductivity is increased by -122-200908815 by electron emission. Therefore, the position of the discharge channel of the gas discharge is defined at the position where the laser focus is set. That is, the position of the gas discharge is defined by the second laser beam. As described above, in the EUV radiation system of the present embodiment, the position of the discharge channel body of the gas discharge is determined, so that the positional stability of the discharge channel of the gas discharge can be improved with high precision. (8) Embodiment of the long pulsed EUV light source device of the present invention Figs. 34 and 35 show an embodiment of an EUV light source device using the extreme ultraviolet light (EUV) generating method of the present invention. Fig. 34 is a view showing the configuration of the above EUV light source device, and EUV radiation is taken out from the right side of the same figure. Fig. 35 is a view showing an example of the configuration of the electric power supply means of Fig. 34; The EUV light source device shown in Fig. 34 is a cavity 1 having a discharge vessel. The chamber 1 has a discharge space la for inputting power into the low-temperature plasma gas described above to generate high-temperature plasma, and collecting EUV light emitted by the high-temperature plasma by the EUV light extraction portion provided in the chamber 1. 7 is guided to the EUV light condensing space lb of the illumination optical system of the exposure apparatus (not shown). The chamber 1 is connected to the exhaust unit 5, and the inside of the chamber 1 is made a reduced-pressure atmosphere by the exhaust unit. Hereinafter, the configuration of each unit will be described. (a) The discharge portion discharge portion 1a is a first discharge electrode 11 in which a metal disk-123-200908815 member is disposed via an insulating material 11?, and a second discharge electrode 12 of a disk-shaped member made of the same metal. Construction. The center of the first discharge electrode 11 and the center of the second discharge electrode 12 are disposed approximately coaxially, and the first discharge electrode 11 and the second discharge electrode 12 are fixed at positions where only the thickness component of the insulating material 110 is interposed. Here, the diameter of the second discharge electrode 12 is larger than the diameter of the first discharge electrode 11. Further, since the first discharge electrode 11 and the second discharge electrode 12 are rotatable, they are hereinafter referred to as a rotating electrode. A rotating shaft 22e of the motor 22a is attached to the second discharge electrode 12. Here, the rotating shaft 22e is attached to the center of the second discharge electrode 12 so that the center of the first discharge electrode 11 and the center of the second discharge electrode 12 are located approximately coaxially with the rotation shaft 22e. The rotary shaft 22e is introduced into the chamber 1 via, for example, a mechanical seal 22c. The mechanical seal 22c is a rotation allowing the rotation shaft 2 2 e to be maintained in a reduced pressure atmosphere in the chamber 1. Below the second discharge electrode 12, a first slider 22g and a second slider 22h made of, for example, a carbon brush are provided. The second slider 22h is electrically connected to the second discharge electrode 12. On the other hand, the first slider 22g is electrically connected to the first discharge electrode 11 through the through hole 22i penetrating the second discharge electrode 12. Further, by the insulating mechanism (not shown), insulation breakdown does not occur between the first slider 22g and the second discharge electrode 12 that are electrically connected to the first discharge electrode 11. The first slider 2 2 g and the second slider 2 2 h are electrical contacts that are slid while maintaining electrical connection, and are connected to the pulse power supply means 15. Pulse -124 - 200908815 The electric power supply means 1 5 ' supplies electric power between the first discharge electrode 1 1 and the second discharge electrode 12 via the first slider 22d and the second slider 22e. In other words, when the motor 22a is operated, the first discharge electrode 1 1 and the second discharge electrode 12 are operated, and the first slider 22g and the second slider are also passed between the first discharge electrode Η and the second discharge electrode 12 . In the piece 22h, electric power is applied from the pulse power supply means 25. As shown in Fig. 3, the pulse power supply means 15 includes a PFN circuit portion, and for example, a pulse power having a relatively long pulse width is applied between the first discharge electrode 11 and the second discharge electrode 12 under load. Further, the first slider 22g and the second slider 22h are carried out from the power supply means 15 via an insulating current introduction terminal (not shown). The current introduction terminal is attached to the cavity 1, and is maintained in a reduced pressure atmosphere in the cavity 1, and is electrically connected to the first slider from the power supply means, and the second slider is electrically connected. The first discharge electrode 11 of the disk-shaped member made of metal and the peripheral portion of the second discharge electrode 12 have an edge shape. As will be described later, when electric power is applied to the first discharge electrode 11 and the second discharge electrode 12 by the power supply means 15, discharge occurs between the edge shape portions of the both electrodes. When the discharge occurs, the two electrodes are at a high temperature. Therefore, the first discharge electrode 1 1 and the second discharge electrode 12 are made of a high melting point metal such as tungsten '钡, 巨, or the like. Further, the insulating material 20c is made of, for example, tantalum nitride, aluminum nitride, diamond or the like. When the discharge occurs in the case of EUV radiation, the first and second discharge electrodes 11 and 12 are rotated. Thereby, the position at which the discharge occurs in the two electrodes is -125-200908815, varying every pulse. Therefore, the thermal load applied to the first and second discharge electrodes 11 and 12 is reduced, and the wear of the electrode can be reduced. The life of the discharge electrode is prolonged. (b) Power supply means A diagram of the configuration of the equal-circuit circuit of the power supply means 15 is shown in Fig. 35. The equal-circuit circuit of the power supply means 15 shown in Fig. 5 is a PFN circuit composed of a charger CH1, a solid-state switch SW, and an LC distributed constant circuit in which n groups of capacitors C and L are connected in a row. The switch SW 1 is formed. An example of the operation of the power supply means is as follows. First, the set charging voltage of the charger CH1 is adjusted to the predetermined 値Vin. Then, when the solid-state switch SW is turned on, the n capacitors C constituting the PFN circuit portion are charged, so that the switch SW1 is turned on, and a voltage is applied between the first main discharge electrode and the second main discharge electrode. Then, if a discharge occurs between the electrodes, a current flows between the electrodes. Here, the lines formed by the capacitors C and the load are different in inductance, and therefore the current periods flowing in the respective lines are different from each other. The current flowing between the electrodes is a circuit that overlaps the flow in each line. As a result, a current pulse having a long pulse width flows between the electrodes. (c) Low-temperature plasma gas supply means In Fig. 34, the means for supplying the low-temperature electric propeller gas is: the high-temperature electric paddle material 2 1 'illuminates the laser beam 23 to the -126 of the high-temperature plasma raw material 2 1 - 200908815 The laser source 23a is composed of a high-speed jet nozzle 60b that rectifies the low-temperature plasma gas discharged from the high-temperature plasma raw material 21 irradiated by the laser beam into a rectifying means of a stable flow excellent in directivity. The high-temperature electric paddle material 21 is a space disposed on a plane perpendicular to the optical axis of the EUV condensing lens 2 described below, and is close to the discharge region between the first discharge electrode 1 1 and the second discharge electrode 1 2 . The high-speed jet nozzle 60b is a field in which a low-temperature plasma gas that is set to be selectively discharged from a nozzle is selectively supplied to a fine discharge passage in a discharge region. As described above, by arranging the high-temperature plasma raw material 21 and the high-speed jet nozzle 60b, the low-temperature plasma gas supplied to the discharge passage does not spread in the direction of the EUV condenser 2. Therefore, the debris generated by the laser beam 23 for the high-temperature plasma 21 and the discharge generated between the electrodes hardly proceeds to the EUV condensing mirror 2. The high-speed jet nozzle 60b is a cylindrical member having a narrowed portion inside as shown in Fig. 24(a). When the high-temperature plasma material 2 1 is irradiated by the laser beam 23 in the high-speed jet nozzle, the high-temperature plasma material 2 1 is vaporized to generate a low-temperature plasma gas. Here, since the narrow portion is provided inside the high-speed jet nozzle 60b, the space between the narrow portion and the portion where the laser beam irradiates the high-temperature plasma raw material is caused by the low-temperature plasma gas. Risingly. Further, the low-temperature plasma gas is accelerated from the opening portion of the narrow portion, and is ejected as a high-speed gas excellent in directivity. Here, the injection direction of the high-speed gas stream depends on the direction of the nozzle for high-speed injection. That is, the direction in which the gasification material is conducted does not depend on the incident direction of the laser beam to the high temperature plasma material. -127- 200908815 The laser beam 2 3 ' emitted from the laser source 2 3 a is via the half 23e, and the concentrating means 23c' is provided in the incident window portion 23d' of the cavity 1 by the high-temperature plasma material 2 1 . Further, the second laser beam emitted from the second laser source 24a is set to be transmitted through the above-mentioned semitransparent mirror 2 3 e. The second laser beam 2 4 is transmitted through the semitransparent mirror 2 3 . e 'the concentrating hand|j is disposed in the incident window portion 2 3 d ' of the cavity 1 and is condensed in the discharge space for the semi-transparent mirror 23e disposed at an inclination of about 45 degrees, and the reverse length is set to a semi-transparent mirror The first laser beam 23 of the reflected wavelength. The incident direction of the second ray 24 that sets the wavelength of the transmission wavelength of the semitransparent mirror 23e to the semitransparent mirror 23e is approximately the same as the direction of reflection of the first ray 23, so that the portion 2 provided in the cavity 1 can be formed. 3 d is made into one. As the first laser source 23a that discharges the first laser beam 23 and the second laser source 24a that emits the second laser beam 24, for example, a Q ND + -YAG laser device is used. The wavelength of the first laser beam 23 and the wavelength of the first beam 24 are changed, for example, by a wavelength element. As described above, when the first laser beam 2 3 is irradiated to a part of the low-temperature plasma gas generated by the high-temperature electricity 21 to reach the discharge region of the discharge region, the energy beam is filled with a certain concentration of energy beam, and The second laser beam 24 condenses a predetermined starting discharge in the discharge field. The transparent mirror is incident on the domain of 24, and 2 3c, the fixed position emits the wave again, and the incident beam is incident on the entrance beam of the laser beam, and the position of the state is -128- 200908815 Therefore, before discharge, the first laser beam 23 must be irradiated to the high-temperature plasma material 2 1 and applied to the first discharge electrode 1 1 and the second discharge electrode 12 from the power supply means 15 at a high voltage. In the inter-state, when the first laser beam 23 is irradiated onto the high-temperature plasma material 21, the first laser beam 23 is discharged by the trigger. Therefore, the application of the high voltage between the first discharge electrode and the second discharge electrode must be performed after the first laser beam is discharged from the first laser source. (d) EUV radiation emitted from the EUV radiation concentrating portion by the discharge space 1 a is condensed by the oblique incidence type EUV condensing mirror 2 provided in the EUV radiation concentrating space 1b, and EUV is provided in the cavity 1 The light extraction unit 7 is guided to an illumination optical system of an exposure apparatus (not shown). The EUV condensing mirror 2 is, for example, a plurality of mirrors having a spheroid having a different diameter or a shape of a rotating paraboloid. These mirrors are on the same axis, and the center axis of the overlap is arranged so that the focus position is approximately the same. For example, on the side of the reflecting surface of the base material having a smooth surface formed of nickel (Ni) or the like, the ruthenium (Ru) is densely coated. A metal film such as molybdenum (Mo) or rhodium (Rh) constitutes EUV light which can reflect an oblique incident angle of 0° to 25°. Further, in Fig. 34, the discharge space la is shown to be larger than the EUV light concentrating space 1b, but for the sake of easy understanding, the actual size relationship is not as shown in Fig. 34. In fact, the EUV light concentrating space lb is larger than the discharge space 1 a. -129- 200908815 (e) The chip collector is disposed between the discharge space la and the EUV light concentrating space lb described above, in order to prevent damage of the EUV condensing mirror 2, and to capture the second and second discharge electrodes in contact with the high temperature plasma. The peripheral portion of 11, 12 is a chip collector used only for EUV light by scraping of metal powder or the like generated by sputtering of high-temperature plasma or by scraping of Sn or Li of the seed. In the EUV light source device shown in Fig. 34, a wheel type collector 3 is employed as the chip collector. The wheel type collector 3 is described as a "metal piece collector" in Patent Document 8, for example. The wheel type collector is a method in which the EUV radiated from the high temperature electric paddle is not blocked, and is composed of a plurality of plates disposed in the radial direction of the high temperature plasma generation region and an annular support body supporting the plate. The wheel type collector 3 is disposed between the discharge space 1a and the EUV condensing mirror 2. In the wheel type collector 3, the pressure is increased more than the surrounding atmosphere, so that the movement of the chips through the wheel type collector is reduced by the influence of the pressure. Therefore, the energy of the swarf colliding with the EUV concentrating mirror is reduced, and the damage of the EUV condensing mirror can be eliminated. Hereinafter, the operation of the above-described EUV light source device will be described using Figs. 36 and 37. As an example, a multi-self-bundling method is taken as an example. The control 26 of the EUV light source device is the memory time data Atd, Atg, Δt s, γ, δ ο
Atd是觸發訊號輸入至電力供應手段1 5的交換手段的 SW1的時機(時刻Td )之後,交換手段作成導通狀態, 而電極間電壓到達至臨界値Vp爲止的時間。Atg是第1 -130- 200908815 雷射射束照射於尚溫電駿原料的時機之後一直到低溫電漿 氣體的至少一部分到達至放電領域爲止的時間。Ats是以 低溫電漿氣體的至少一部分到達至放電領域的時機作爲基 準,放電領域的低溫電漿氣體的密度爲可起動依雷射觸發 器的氣體放電的範圍內的時間。 一方面’ γ、δ是校正時間,在以後會詳細說明。 一般’若被施加於放電電極11、12的電壓V大,則 放電電極1 1、1 2間的電壓波形的上昇會變快。因此,上 述的Atd是成爲依存於被施加於放電電極Η、12的電壓 V。EUV光源裝置的控制部2 6是將事先以實驗等所求得的 電壓V與時間Atd的關係作爲表格加以記憶。 又’控制部26是記憶主觸發訊號輸出至脈衝電力供 應手段1 5的交換手段的開關S W 1的時機之後,交換手段 成爲導通的時機爲止的延遲時間dl。 首先,來自EUV光源裝置的控制部26的候用指令被 送訊至排氣裝置5,電動機22a (第36圖的步驟S501、第 3 7 圖的 S 6 0 1 )。 受訊候用指令的排氣裝置5是開始動作。亦即,排氣 裝置5進行動作,使得腔1內成爲減壓氣氛。又,電動機 22a進行動作,使得第1旋轉(放電)電極11、第2旋轉 (放電)電極1 2旋轉。以下,將上述的動作狀態總稱爲 候用狀態(第36圖的步驟S 502、第37圖的S602 )。 EUV光源裝置的控制部26是將候用完成訊號送訊至 曝光裝置的控制部27 (第36圖的步驟S503、第37圖的 200908815 S603 ) ° 由受訊候用完成訊號的曝光裝置的控制部27,EUV 光源裝置的控制部26是受訊發光指令。又’曝光裝置側 控制EUV放射的強度時,在本發光指令,也包括著EUV 放射的強度資料(第36圖的步驟S504、第37圖的S604 )° EUV光源裝置的控制部26是將充電控制訊號送訊至 電力供應手段1 5的充電器CH 1。充電控制訊號是例如放 電開始時機資料訊號等所形成。如上述地,在來自曝光裝 置的控制部27的發光指令包括著EUV放射的強度資料時 ,則電力供應手段1 5的PFN電路部的各電容器C的充電 電壓資料訊號也被包括在上述充電控制訊號。 例如藉由實驗等事先求出EUV放射強度與對於各電 容器C的充電電壓的關係,來製作儲存兩者相關的表格。 EUV光源裝置的控制部26是記憶著該表格,依據包括於 從曝光裝置的控制部27的發光指令的EUV放射的強度資 料,而由表格叫出PFN電路部的各電容器C的充電電壓 資料。又,依據所叫出的充電電壓資料,EUV光源裝置的 控制26是將包括對於各電容器C的充電電壓資料訊號的 充電控制訊號送訊至電力供應手段的充電器CH1 (第36 圖的步驟S505、第37圖的S605)。 充電器CH1是如上述地,進行各電容器C的充電。 (第36圖的步驟S506)。 EUV光源裝置的控制部26是以將第〗觸發訊號輸出 -132- 200908815 至第1雷射源23a的時機作爲基準,而計算將主觸發訊號 輸出至電力供應手段1 5的開關S W 1的時機。上述時機是 依據事先所記憶的時間資料d 1所決定。又,EUV光源裝 置的控制部26是以將第1觸發訊號輸出至第1雷射源23 a 的時機作爲基準,而計算將第2觸發訊號輸出至第2雷射 源2 4 a的時機。上述時機是依據事先所記憶的時間資料d 1 、Atg、Ats、Atd所決定(第36圖的步驟S 5 07、第37圖 的 S 6 0 6 )。 又,實際上,將第1觸發訊號輸出至第1雷射源23a 而以第1雷射射束從第1雷射源2 3 a所放出的時機T L1作 爲基準,來設定電力供應手段15的交換手段的開關SW1 成爲導通的時機Td,第2雷射射束從第2雷射源所放出 的時機TL2較佳。 在本實施例中,事先求出將主觸發訊號輸出至電力供 應手段1 5的交換手段的時機Td',一直到該主觸發訊號輸 入至脈衝電力供應手段1 5的交換手段而使交換手段成爲 導通的時機Td爲止的延遲時間dl。又,以上述延遲時間 dl來修正將主觸發訊號輸出至電力供應手段15的交換手 段的時機Td',以求出交換手段成爲導通的時機Td。 一方面’第1觸發訊號所送出的時機TL 1'一直到照射 著第1雷射射束爲止的延遲時間d2,是第1雷射源23a爲 Q開關式Nd + -YAG雷射時,可忽略爲ns級程度地小之故 ’因而在此不考慮。又第2觸發訊號所送出的時機TL11 — 直到照射著第1雷射射束23爲止的延遲時間d3,是第1 -133- 200908815 雷射源23a爲Q開關式Nd + -YAG雷射時,可忽略爲ns級 程度地小之故’因此而在此不考慮。亦即,被認爲時機 TL1' = TL1,時機 TL2' = TL2。 亦即,藉由將第1觸發訊號輸出至第1雷射源23a的 時機TL1’作爲基準’來設定將主觸發訊號輸出至電力供應 手段15的開關SW1的時機Td',將第2觸發訊號輸出至 第2雷射源24a的時機TL2',實質上可實現以第1雷射射 束從第1雷射源23a放出的時機TL1作爲基準的電力供應 手段1 5的交換手段的開關S W 1成爲導通的時機Td,第2 雷射射束從第2雷射源24a所放出的時機TL2的設定。 以送訊第1觸發訊號的時機T L Γ作爲基準時,則將主 觸發訊號輸出至電力供應手段1 5的開關S W 1的時機T d ’ 是如以下地被求出。 在本實施例中,將第1雷射射束23照射在高溫電槳 原料2 1所生成的低溫電漿氣體的一部分到達至放電領域 ,而放電領域成爲以某一程度低濃度的低溫電漿氣體所充 滿的狀態的時機,將第2雷射射束24聚光在放電領域的 所定位置而起動放電。 因此,在放電之前,必須將第1雷射射束23照射在 高溫電漿原料2 1。在此,在高電壓從電力供應手段施加於 負荷的第1放電電極11與第2放電電極12之間而將第1 雷射射束2 3照射在高溫電漿原料2 1時,則第1雷射射束 23是通過放電領域近旁之故,因而利用第1雷射射束23 的觸發器會發生放電。亦即,第1雷射射束23的一部分 -134- 200908815 被照射在放電電極11、12時’則從被照射的放電電極放 出著熱電子而起動放電。 所以’局電壓對於第1放電電極與第2放電電極 12之間的施加’是必須在第1雷射射束2 3從第1雷射源 2 3 a被放出之後才進行。 亦即’電力供應手段1 5的交換手段的開關s W1成爲 導通的時機Td,是以第1雷射射束23從第1雷射源23a 被放出的時機TL1作爲基準時,成爲Tdg TL1 ... (30)。 因此,以送訊第1觸發訊號的時機TL11作爲基準時的 對於電力供應手段的開關SW1的主觸發訊號送出時機Td' ,是成爲Atd is the time until the switching means is turned on after the trigger signal is input to the switching means SW1 of the power supply means 15 (time Td), and the voltage between the electrodes reaches the critical value 値Vp. Atg is the time from 1 -130 to 200908815 when the laser beam is irradiated onto the material of the temperate battery until at least a portion of the low temperature plasma gas reaches the discharge field. Ats is based on the timing at which at least a portion of the low temperature plasma gas reaches the discharge field, and the density of the low temperature plasma gas in the discharge field is the time within the range in which the gas discharge of the laser trigger can be activated. On the one hand, 'γ, δ is the correction time, which will be explained in detail later. In general, when the voltage V applied to the discharge electrodes 11 and 12 is large, the voltage waveform between the discharge electrodes 1 1 and 1 2 increases rapidly. Therefore, the above Atd is dependent on the voltage V applied to the discharge electrodes Η, 12. The control unit 26 of the EUV light source device stores the relationship between the voltage V and the time Atd obtained in advance by experiments or the like as a table. Further, the control unit 26 is a delay time dl until the timing at which the switching means is turned on after the timing at which the main trigger signal is output to the switch S W 1 of the switching means of the pulse power supply means 15 is stored. First, the candidate command from the control unit 26 of the EUV light source device is sent to the exhaust device 5, the motor 22a (step S501 in Fig. 36, and S6 0 1 in Fig. 3). The exhaust device 5 that receives the command is started. That is, the exhaust device 5 operates to make the inside of the chamber 1 a reduced pressure atmosphere. Further, the motor 22a operates to rotate the first rotating (discharging) electrode 11 and the second rotating (discharging) electrode 12. Hereinafter, the above-described operation states are collectively referred to as a standby state (step S502 of Fig. 36 and S602 of Fig. 37). The control unit 26 of the EUV light source device transmits the candidate completion signal to the control unit 27 of the exposure device (step S503 of Fig. 36, and Fig. 200908815 S603 of Fig. 37). Control of the exposure device by the reception completion signal The control unit 26 of the EUV light source device is a received light-emitting command. Further, when the exposure device side controls the intensity of the EUV radiation, the intensity command data of the EUV radiation is also included in the light emission command (step S504 in Fig. 36 and S604 in Fig. 37). The control unit 26 of the EUV light source device is to be charged. The control signal is sent to the charger CH 1 of the power supply means 15. The charge control signal is formed by, for example, a timing signal at the start of discharge. As described above, when the light emission command from the control unit 27 of the exposure device includes the intensity data of the EUV radiation, the charging voltage data signal of each capacitor C of the PFN circuit portion of the power supply device 15 is also included in the above charging control. Signal. For example, a relationship between the EUV radiation intensity and the charging voltage for each of the capacitors C is obtained in advance by an experiment or the like to create a table for storing both. The control unit 26 of the EUV light source device stores the table, and based on the intensity data of the EUV radiation included in the light emission command from the control unit 27 of the exposure device, the charging voltage data of each capacitor C of the PFN circuit unit is called by the table. Further, based on the called charging voltage data, the control 26 of the EUV light source device transmits the charging control signal including the charging voltage data signal for each capacitor C to the charger CH1 of the power supply means (step S505 of FIG. 36). , S605 of Fig. 37). The charger CH1 is charged as described above for each capacitor C. (Step S506 of Fig. 36). The control unit 26 of the EUV light source device calculates the timing of outputting the main trigger signal to the switch SW 1 of the power supply means 15 by using the timing of the first trigger signal output -132 - 200908815 to the first laser source 23a as a reference. . The above timing is determined based on the time data d 1 memorized in advance. Further, the control unit 26 of the EUV light source device calculates the timing at which the second trigger signal is output to the second laser source 24a based on the timing at which the first trigger signal is output to the first laser source 23a. The above timing is determined based on the time data d 1 , Atg, Ats, and Atd stored in advance (step S 5 07 of Fig. 36, S 6 0 6 of Fig. 37). Further, actually, the first trigger signal is output to the first laser source 23a, and the power supply means 15 is set based on the timing T L1 at which the first laser beam is emitted from the first laser source 2 3 a as a reference. The switch SW1 of the exchange means becomes the timing Td of conduction, and the timing TL2 of the second laser beam emitted from the second laser source is preferable. In the present embodiment, the timing Td' of the switching means for outputting the main trigger signal to the power supply means 15 is obtained in advance, until the switching means of the main trigger signal is input to the pulse power supply means 15 to make the switching means The delay time dl until the timing Td is turned on. Further, the timing Td' at which the main trigger signal is output to the switching means of the power supply means 15 is corrected by the delay time dl, and the timing Td at which the switching means is turned on is obtained. On the one hand, the timing TL 1 ' sent by the first trigger signal until the delay time d2 after the first laser beam is irradiated is when the first laser source 23a is a Q-switched Nd + -YAG laser. Ignore the reason that the ns level is small, so it is not considered here. Further, the timing TL11 of the second trigger signal is delayed until the delay time d3 after the first laser beam 23 is irradiated, and is the first -133-200908815 laser source 23a is a Q-switched Nd + -YAG laser. It can be ignored as the ns level is small, so it is not considered here. That is, it is considered that the timing TL1' = TL1, and the timing TL2' = TL2. That is, the timing Td' of outputting the main trigger signal to the switch SW1 of the power supply means 15 by setting the timing TL1' of the first trigger signal to the first laser source 23a as the reference ', the second trigger signal is set. The switch TL2' output to the second laser source 24a substantially realizes the switch SW1 of the switching means of the power supply means 15 based on the timing TL1 of the first laser beam 23a discharged from the first laser source 23a. At the timing Td of conduction, the timing of the timing TL2 emitted by the second laser beam from the second laser source 24a is set. When the timing T L 送 of the first trigger signal is transmitted as a reference, the timing T d ' at which the main trigger signal is output to the switch S W 1 of the power supply means 15 is obtained as follows. In the present embodiment, the first laser beam 23 is irradiated to a portion of the low-temperature plasma gas generated by the high-temperature electric paddle material 21 to reach the discharge region, and the discharge region becomes a low-temperature plasma having a low concentration to some extent. At the timing of the state in which the gas is full, the second laser beam 24 is condensed at a predetermined position in the discharge area to start the discharge. Therefore, the first laser beam 23 must be irradiated to the high-temperature plasma material 21 before discharge. Here, when the high-voltage is applied between the first discharge electrode 11 and the second discharge electrode 12 of the load from the power supply means, and the first laser beam 2 3 is irradiated to the high-temperature plasma material 2 1 , the first The laser beam 23 passes through the vicinity of the discharge field, so that the discharge using the trigger of the first laser beam 23 occurs. That is, when a part of the first laser beam 23 -134 - 200908815 is irradiated onto the discharge electrodes 11 and 12, the hot electrons are emitted from the irradiated discharge electrode to start the discharge. Therefore, the application of the local voltage to the first discharge electrode and the second discharge electrode 12 must be performed after the first laser beam 2 3 is discharged from the first laser source 23 3 a. In other words, the timing Td at which the switch s W1 of the switching means of the electric power supply means 15 is turned on is Tdg TL1 when the timing TL1 at which the first laser beam 23 is discharged from the first laser source 23a is used as a reference. .. (30). Therefore, the main trigger signal sending timing Td' of the switch SW1 for the power supply means when the timing TL11 of transmitting the first trigger signal is used as a reference is
Td' + dl ^ TL l' + d2 ··· (3 1) 。在此,延遲時間d2是可忽略程度地小之故,因而 上述主觸發訊號送出時機Td'是成爲Td' + dl ^ TL l' + d2 ··· (3 1) . Here, the delay time d2 is negligibly small, and thus the main trigger signal sending timing Td' is
Td' + dl ^ TL Γ …(32) 在本實施例中,第1觸發訊號被送訊而第1雷射射束 23確實地被放出之後才施加電壓的方式,主觸發訊號被送 訊使得開關SW1成爲導通的時機Td,設定成比第1雷射 射束23被放出的時機TL1還稍微延遲者。將這時候的延 遲時間定義爲校正時間γ ’而將式(3 2 )予以變形’則成 爲Td' + dl ^ TL Γ (32) In this embodiment, the first trigger signal is sent and the first laser beam 23 is actually discharged after the voltage is applied, and the main trigger signal is sent. The timing Td at which the switch SW1 is turned on is set to be slightly delayed from the timing TL1 at which the first laser beam 23 is discharged. Defining the delay time at this time as the correction time γ ' and deforming the equation (3 2 )' becomes
Td' + dl =TL 1 * + γ …(33) 。亦即,以送訊第1觸發訊號的時機T L1'作爲基準時 ,則將主觸發訊號訊號輸出至電力供應手段的開關s w 1 -135- 200908815 的時機Td_是成爲Td' + dl = TL 1 * + γ ... (33) . That is, when the timing T L1 ' of transmitting the first trigger signal is used as a reference, the timing Td_ of the switch s w 1 - 135 - 200908815 for outputting the main trigger signal signal to the power supply means becomes
Td'^TLl' + Y-dl ... (34) ο 當主觸發訊號被送訊而開關s W 1成爲導通狀態,則 電極間電壓會上昇。在此放電是必須發生在電極間電壓到 達至某一臨界値Vp的時機T1 ( =Td + Md)以後。如上述 地,臨界値Vp是發生放電時所流動的放電電流値成爲臨 界値Ip以上或Ip2以上時的電壓値。 亦即,在不足臨界値Vp發生放電時,放電電流的峰 値是不會到達至臨界値Ip或Ip2。 在本實施例中,將第2雷射射束聚光於放電領域的所 定位置而起動放電。因此,第2雷射射束的放出時機TL2 ,是必須設定在電極間電壓到達至臨界値Vp的時機T1以 後。 亦即,成爲, TL2 ^ Td + Atd …(35) 因此,送出第2觸發訊號的時機TL2'與送出主觸發訊 號的時機Td’之關係,是成爲 TL2' ^ Td' + d 1 +Atd .-.(36) 一方面,在本實施例中,將第1雷射射束2 3照射在 高溫電漿原料21所生成的低溫電漿氣體的一部分到達至 放電領域,而放電領域成爲以某一程度低濃度的低溫電漿 氣體所充滿的狀態的時機,將第2雷射射束24聚光在放 電領域的所定位置而起動放電。如上述地,藉由第1雷射 -136- 200908815 射束23的照射’從高溫電漿原料2 1發生量低溫電漿氣體 的穩定流。 當低溫電漿氣體的穩定流的前頭到達至放電領域的時 機(低溫電漿氣體的至少一部分到達至放電領域的時機) 之後,佔有放電領域的低溫電漿氣體的密度較小,而藉由 依第2雷射射束24的照射的雷射觸發器發生著氣體放電 電漿。 然而,藉由穩定流繼續流動,佔有放電領域的低溫電 漿氣體的密度是隨著時間經過而增加,而到達至某一所定 値(例如,離子密度l〇17cm〜102<)cm3 ),這時候,即使以 第2雷射射束24作爲觸發器也不容易發生氣體放電,不 會發生放電,或是發生依電壓上昇的火花放電。亦即,無 法控制依第2雷射射束24的放電起動,無法劃定放電通 道的位置。 因此,第2雷射射束24的照射,是必須在佔有放電 領域的低溫電漿氣體的密度爲某一程度小的時間帶進行。 以低溫電漿氣體的至少一部分到達至放電領域的時機 作爲基準,將放電領域的低溫電漿氣體的密度,在可起動 依雷射觸發器的氣體放電的範圍內的時間作爲Ats,而將 第1雷射射束照射於高溫電漿原料的時機一直到低溫電漿 氣體的至少一部分到達至放電領域爲止的時間作爲Atg時 ,則第2雷射射束24的放出時機TL2,是必須滿足以下 的式。 TLl+Atg^ TL2^ TLl+Atg + Ats ".(37) -137- 200908815 因此,送出第2觸發訊號的時機TL2,與送出第1觸發 訊號的時機TLr的關係是成爲, TLl' + Atg^ TL2'^ TLlf + Atg + Ats …(38) 亦即,送出第2觸發訊號的時機TL21,是必須設定成 滿足以下式。 TL2' ^ Td' + dl+Atd -.(36) TLl' + Atg^ TL2'^ TLl' + Atg + Ats …(38) 在此,爲了容易瞭解,作成 TL2'-Td' + dl + Atd …(39) (39)式是藉由代入式(34),成爲如以下。 TL2' = TL 1'+ 7 +Atd .-.(40) 又,送出第2觸發訊號的時機TL21,是作成設定成一 致於低溫電漿氣體的至少一部分到達至放電領域的時機 TL’ + Atg經過校正時間ε後(〇< e <Ats )之時機。 亦即, TL2' = TL Γ+ γ + Atd …(40) TL2' = TLl' + Atg + s(0<s<Ats) ---(41) 校正時間ε與校正時間γ之關係是成爲 ε = γ + Δΐά-Atg …(42) 亦即,在本實施例中,如以下地設定第2觸發訊號的 送出時機TL2'。 T L 2' = T L 11 + Δ t g + ε (0 < ε < Δ t s , ε = γ + Δ t d - A t g) ---(43) 藉由將第2觸發訊號的送出時機TL2'設定成如式(43 )所示,第2雷射射束是電極間電壓到達至Vp,且放電 -138- 200908815 領域的能量射束的密度爲可起動依雷射觸發器的氣體放 的狀態的時間範圍內。 EUV光源裝置的控制部26是設定各電容器C的充 穩定爲止的時間的充電器充電穩定時間tst經過的時機 後的時機TL11,而在該時機TL1'的時機中,將第1觸 訊號送訊至第1雷射源23a (第36圖的步驟S508、第 圖的 S605、S607 )。 EUV光源裝置的控制部26,是在步驟S607所設定 送訊以時機TL1’作爲基準時的主觸發訊號的時機Td’, 主觸發訊號送訊至電力供應手段15的開關SW1。又, 訊以時機TL11作爲基準時的第2觸發訊號的時機TL21 將第2觸發訊號送訊至第2雷射源24a。(第36圖的步 S509、第 37 圖的 S610、S613)。 在步驟S608中與送出第1觸發訊號大約同時地使 第1雷射射束24被照射於高溫電漿原料21 (第3 6圖 S607、S608 ) ° 當第1雷射射束被照射在高溫電漿原料,則從高溫 漿原料發生低溫電槳氣體的穩定流,而在時間Atg後, 溫電漿氣體的至少一部分到達至放電領域(第37圖 S609 ) 〇 如上述地,在步驟S 6 0 9中,以依據(3 4 )式的時 Td',使得主觸發訊號被送出至電力供應手段15的開 SW1。結果,時間dl後使得開關SW1成爲導通狀態, 第1旋轉電極11、第2旋轉電極12間的電壓會上昇。 電 電 以 發 37 的 將 送 驟 得 的 電 低 的 機 關 而 經 -139- 200908815 時間Atd後,電極間電壓到達至臨界値vP。如上述地, 該臨界値V p是發生放電時所流動的放電電流値成爲臨界 値Ip以上時的電壓値(第37圖的S610、S611、S612)。 一方面’如上述地,在步驟S609中,以依據(43) 式的時機TL2’、第2觸發訊號被送出至第2雷射源24a。 結果’第2雷射射束24在電極間電壓到達至Vp,且 放電領域的低溫電漿氣體的密度在可起動依雷射觸發器的 氣體放電的狀態的時間範圍內,被聚光於放電領域的所定 位置。 結果,在放電領域內發生氣體放電。如上述地,在第 2放電電極24的焦點近旁,藉由電子放出而增加電導率。 因此,氣體放電的放電通道的位置被劃定在設定雷射焦點 的位置。亦即,氣體放電位置是藉由第2雷射射束被劃定 (第 37 圖的 S613、S614)。 開始放電後,在經過Ati之時機,放電電流的大小達 到上述的臨界値Ip (第3 7圖的S 6 1 5 )。 在時機Tl+rheat(>Tl+Ati)中,低溫電漿氣體的電子 溫度是到達至20〜30eV而成爲高溫電漿,開始該高溫電漿 的EUV放射(第36圖的步驟S510、第37圖的S616)。 低溫電漿氣體是從開始放電前就開始供應至放電形成 有氣體放電的細放電通道之後,在該氣體放電的細放電通 道也連續地供應著低溫電漿氣體之故,因而重複進行著自 束效應或是依自我磁場的閉合效果。因此,細放電通道的 直徑是表示變細或變寬的脈動狀舉動,惟相對性地被保持 -140- 200908815 在細小狀態。亦即,重複地進行低溫電漿的自束,繼續著 EUV放射。 在此,在利用習知的自束效應的DDP方式,LAGDPP 方式,維持EUV放射的時間是例如200ns以下之故,因 而繼續電流値爲Ip以上的放電通道的時間,爲低溫電漿 氣體對細放電通道的供應從開始放電時機T1繼續( 2 0 0 n s + τ heat)以上的方式,藉由設定脈衝電力供應手段1 5 及一對電極(第1電極11及第2電極12)所構成放電電 路,與利用習知的自束效應的DPP方式,LAGDPP方式相 比較成爲可實現EUV放射的長脈衝化。 從高溫電漿所放射的EUV放射,是通過輪型收集器3 而藉由被配置於聚光空間的斜入射型EUV聚光鏡2被聚 光,而藉由設於腔1的EUV光取出部7被引導至省略圖 示的曝光裝置的照射光學系。 在本實施例的EUV發生方法中,與實施例1的EUV 發生方法同樣,藉由多自束方式,非自束方式,可實現 EUV放射的長脈衝化。 又,成爲可將給予電極的熱負荷與習知相比較作成較 小,而成爲可抑制發生碎屑。又,不必如習知的長脈衝化 技術地,在放電空間流著大電流,且爲了維持自束效應而 變化放電電流的波形。亦即,不需要高精度的電流控制。 尤其是在本實施例中,將第1雷射射束照射於高溫電 槳原料所生成的低溫電漿氣體的一部分到達至放電領域, 而在放電領域以某一程度低濃度的低溫電漿氣體充滿的狀 200908815 態的時機,將第2雷射射束聚光在放電領域的所定位置, 不是真空電弧放電而是起動氣體放電。 在此,在第2雷射射束的焦點近旁,藉由電子放出而 增加電導率。因此,氣體放電的放電通道的位置被劃在設 定雷射焦點的位置。亦即,氣體放電位置是藉由第2雷射 射束被劃定。 如此地在表示於本實施例的EUV放射方式中,被劃 定氣體放電通道本體的位置之故,因而可實現氣體放電通 道的位置穩定性的高精度化。 又’劃定氣體放電的放電通道位置的第2雷射射束的 脈衝寬’是具某程度短脈衝較佳。若第2雷射射束的脈衝 寬爲短脈衝,則第2雷射射束的峰値功率變大。亦即,第 2雷射射束所聚光的領域的離子漂移變小,且電離度變大 。因此’放電通道的直徑是變更細小,而且放電通道的境 界成爲明確。亦即’成爲EUV放射源的高溫電漿的直徑 變小’成爲作爲曝光用光源可提供適合的EUV光源裝置 。上述脈衝寬是例如1 n s以下較佳。 【圖式簡單說明】 第1(a)圖至第1(f)圖是表示說明本發明的euv 生成的時序圖(1 )。 第2(a)圖至第2(f)圖是表示說明本發明的euv 生成的時序圖(2 )。 第3(a)圖及第3(b)圖是表示用以說明本發明的 -142- 200908815 電極、原料供應位置、原料用雷射射束的照射位置的互相 關係的槪略圖(1 )。 第4(a)圖及第4(b)圖是表示用以說明本發明的 電極、原料供應位置、原料用雷射射束的照射位置的互相 關係的槪略圖(2 )。 第5(a)圖及第5(b)圖是表示用以說明本發明的 電極、原料供應位置、原料用雷射射束的照射位置的相關 係的槪略圖(3 )。 第6圖是表示說明在本發明中高溫電漿原料達到滿足 EUV放射條件的條件爲止的路徑的圖式。 第7(a)圖至第7(c)圖是表示說明本發明的長脈 衝化(多自束方式)方法的圖式。 第8(a)圖至第8(c)圖是表示說明本發明的長脈 衝化(非自束方式)方法的圖式。 第9圖是表示本發明的實施例的EUV光源裝置的斷 面構成(前視圖)的圖式。 第10圖是表示本發明的實施例的EUV光源裝置的斷 面構成(俯視圖)的圖式。 第11(a)圖及第11(b)圖是表示第2雷射射束( 起動用雷射射束)的聚光例的圖式。 第1 2圖是表示說明由原料供應單元所滴下的原料位 置的監測環的圖式。 第13圖是表示圖示於第9圖、第10圖的實施例的動 作的流程圖(1 ) -143- 200908815 第14圖是表示圖示於第9圖、第10圖的實施例的動 作的流程圖(2 )。 第15圖是表示圖示於第9圖、第10圖的實施例的動 作的時序圖。 第16圖是表不圖不於第9圖、第10圖的貫施例的 EUV光源裝置的第1變形例(前視圖)的圖式。 第1 7圖是表示圖示於第9圖、第1 0圖的實施例的 EUV光源裝置的第1變形例(俯視圖)的圖式。 第18圖是表示圖示於第9圖、第10圖的實施例的 EUV光源裝置的第2變形例(前視圖)的圖式。 第1 9圖是表示圖示於第9圖、第1 0圖的實施例的 EUV光源裝置的第2變形例(俯視圖)的圖式。 第20圖是表示圖示於第9圖、第10圖的實施例的 EUV光源裝置的第2變形例(側視圖)的圖式。 第21圖是表示圖示於第9圖、第10圖的實施例的 EUV光源裝置的第3變形例(前視圖)的圖式。 第22圖是表示圖示於第9圖、第10圖的實施例的 EUV光源裝置的第3變形例(側視圖)的圖式。 第23 ( a)圖及第23 ( b )圖是表示將原料噴出用的 管狀噴嘴安裝於第1能量射束的照射位置的情況的槪念圖 〇 第24(a)圖至第24(c)圖是表示將原料噴出用的 高速噴射用噴嘴安裝於第1能量射束的照射位置,而在噴 嘴內部的一部分設置狹窄部的情形的圖式。 -144- 200908815 第25圖是表示一體地構成收容高溫電漿原料的原料 收容部與高速噴射用噴嘴的情況的圖式。 桌26(a)圖及第26(b)圖是表示在高溫電裝原料 的射束所照射的位置形成凹部的情況的圖式。 第27圖是表示圖示於第9圖、第1〇圖的實施例的 EUV光源裝置的第1變形例的動作的流程圖(1 )。 第28圖是表不圖不於第9圖、第1〇圖的實施例的 EUV光源裝置的第1變形例的動作的流程圖(2 )。 第29圖是表示圖示於第9圖、第10圖的實施例的 EUV光源裝置的第1變形例的動作的時序圖。 弟30圖是表jp:說明調整照射的圖式。 第31圖是表示依據本發明被長脈衝化的EUV光源裝 置的基本構成例的圖式。 第32(a)圖至第32(e)圖是表示用以說明圖示於 第3 1圖的EUV光源裝置的動作的時序圖。 第33圖是表示說明被長脈衝化的本發明的實施例的 EUV光源裝置的動作的圖式。 第34圖是表示說明被長脈衝化的EUV光源裝置的實 施例的構成例的圖式。 弟35圖是表不電力供應手段的等値電路的構成例的 圖式。 第3 6圖是表示圖示於第3 4圖的實施例的動作的流程 圖。 第3 7圖是表示圖示於第3 4圖的實施例的動作的時序 -145- 200908815 圖。 第3 8圖是表示說明高溫電漿原料達到滿足EUV放射 條件的條件爲止的路徑的圖式。 第39(a)圖至第39(c)圖是表示習知的DPP方式 的EUV光源裝置的電漿電流I、電漿柱的半徑γ、EUV放 射輸出的關係的圖式。 第40(a)圖至第40(c)圖是表示在習知的DPP方 式的EUV光源裝置中被長脈衝化時的電漿電流I、電漿柱 的半徑γ、EUV放射輸出的關係的圖式。 第4 1圖是表示爲了實現EUV放射的長脈衝化方法的 習知的DPP方式EUV光源裝置的構成例的圖式。 【主要元件符號說明】 1 :腔 1 a :放電空間 1 b :聚光空間 1 c :隔間壁 2 : EUV聚光鏡 3 :輪型收集器 4、5 :真空排氣裝置 6 :磁鐵 7 : EUV取出部 8 :脈衝電力發生器 1 1、12 :放電電極 -146- 200908815 lla、12a:饋電用熔融金屬 1 lb、12b :容器 1 lc、12c :電力導入部 13、14:氣體供應單元 1 3 a :噴嘴 1 3 b :氣霧 1 5 :脈衝電力供應手段 20 :原料供應單元 20a :原料監測器 2 1 :原料 22a、22b :電動機 2 2 c、2 2 d :機械密封 22e、22f :旋轉軸 23 :原料用雷射射束(第1雷射射束) 23a :第1雷射源 2 3 b :第1雷射控制部 24 :起動用雷射射束(第2雷射射束) 24a :第2雷射源 24b :第2雷射控制部 25 :原料回收手段 2 6 :控制部 2 7 :曝光機(控制部) 3 0 :原料供應單元 3 1 :線狀原料 -147- 200908815 40 : 40a : 40b : 40c : 50 : 50a : 50b : 50c、 50d : 50e : 6 0a: 60b : 62 : 63 : 原料供應單元 液體原料供應手段 原料供應用圓盤 電動機 原料供應單元 液體原料總線 毛細管 6 4 :加熱器 液體原料總線控制部 加熱器用電源 管狀噴嘴 高速噴射用噴嘴 狹窄部 壓力上昇部 -148-Td'^TLl' + Y-dl ... (34) ο When the main trigger signal is sent and the switch s W 1 is turned on, the voltage between the electrodes rises. Here, the discharge must occur after the timing of the voltage between the electrodes reaches a certain threshold 値Vp, T1 (=Td + Md). As described above, the critical enthalpy Vp is a voltage 値 when the discharge current 値 flowing when the discharge occurs is equal to or greater than the critical value Ip or Ip2. That is, the peak of the discharge current does not reach the critical threshold 値Ip or Ip2 when the discharge is insufficient at the critical threshold 値Vp. In the present embodiment, the second laser beam is condensed at a predetermined position in the discharge area to start the discharge. Therefore, the timing TL2 of the second laser beam emission must be set after the timing T1 at which the voltage between the electrodes reaches the critical threshold pVp. That is, TL2 ^ Td + Atd (35) Therefore, the relationship between the timing TL2' at which the second trigger signal is sent and the timing Td' at which the main trigger signal is sent is TL2' ^ Td' + d 1 + Atd . - (36) On the one hand, in the present embodiment, the first laser beam 2 3 is irradiated to a portion of the low-temperature plasma gas generated by the high-temperature plasma raw material 21 to reach the discharge field, and the discharge field becomes a certain At a timing when the low-temperature plasma gas is sufficiently filled, the second laser beam 24 is condensed at a predetermined position in the discharge region to start the discharge. As described above, the steady flow of the low-temperature plasma gas is generated from the high-temperature plasma raw material 2 1 by the irradiation of the first laser -136 - 200908815 beam 23. When the front of the steady flow of the low-temperature plasma gas reaches the timing of the discharge field (at least a part of the low-temperature plasma gas reaches the timing of the discharge field), the density of the low-temperature plasma gas occupying the discharge field is small, and 2 The laser trigger of the laser beam irradiated by the laser beam 24 generates a gas discharge plasma. However, by continuing to flow through the steady flow, the density of the low-temperature plasma gas occupying the discharge field increases with time, and reaches a certain enthalpy (for example, ion density l〇17cm~102<) cm3), which At this time, even if the second laser beam 24 is used as a trigger, gas discharge does not easily occur, discharge does not occur, or spark discharge due to voltage rise occurs. That is, the discharge start of the second laser beam 24 cannot be controlled, and the position of the discharge channel cannot be determined. Therefore, the irradiation of the second laser beam 24 is performed in a time zone in which the density of the low-temperature plasma gas in the field of the discharge is small. Taking the timing at which at least a portion of the low-temperature plasma gas reaches the discharge region as a reference, the density of the low-temperature plasma gas in the discharge region is taken as Ats in the range of the gas discharge that can be activated by the laser trigger, and When the time at which the laser beam is irradiated to the high-temperature plasma raw material until the time when at least a part of the low-temperature plasma gas reaches the discharge region is Atg, the timing TL2 of the second laser beam 24 must satisfy the following. Style. TLl+Atg^ TL2^ TLl+Atg + Ats ".(37) -137- 200908815 Therefore, the relationship between the timing TL2 at which the second trigger signal is sent and the timing TLr at which the first trigger signal is sent is TLl' + Atg ^ TL2'^ TLlf + Atg + Ats (38) That is, the timing TL21 at which the second trigger signal is sent must be set to satisfy the following equation. TL2' ^ Td' + dl+Atd -. (36) TLl' + Atg^ TL2'^ TLl' + Atg + Ats (38) Here, for easy understanding, make TL2'-Td' + dl + Atd ... (39) The formula (39) is obtained by substituting the formula (34) as follows. TL2' = TL 1' + 7 + Atd .-. (40) Further, the timing TL21 at which the second trigger signal is sent is set to coincide with the timing at which at least a part of the low-temperature plasma gas reaches the discharge region TL' + Atg After the correction time ε (〇 < e < Ats ). That is, TL2' = TL Γ + γ + Atd ... (40) TL2' = TLl' + Atg + s(0<s<Ats) ---(41) The relationship between the correction time ε and the correction time γ is ε γ + Δΐά-Atg (42) That is, in the present embodiment, the transmission timing TL2' of the second trigger signal is set as follows. TL 2' = TL 11 + Δ tg + ε (0 < ε < Δ ts , ε = γ + Δ td - A tg) --- (43) by setting the timing TL2' of the second trigger signal As shown in equation (43), the second laser beam is the voltage between the electrodes reaching Vp, and the density of the energy beam in the field of discharge -138-200908815 is the state in which the gas can be activated by the laser trigger. Within the time range. The control unit 26 of the EUV light source device is the timing TL11 after the timing at which the charger charging stabilization time tst has elapsed until the charging of each capacitor C is set, and the first touch signal is transmitted at the timing of the timing TL1'. The first laser source 23a (step S508 of Fig. 36, S605, S607 of the figure). The control unit 26 of the EUV light source device is the timing Td' of the main trigger signal when the timing of the transmission timing TL1' is set in step S607, and the main trigger signal is sent to the switch SW1 of the power supply means 15. Further, the timing TL21 of the second trigger signal when the timing TL11 is used as the reference transmits the second trigger signal to the second laser source 24a. (Step S509 of Fig. 36, S610, S613 of Fig. 37). In step S608, the first laser beam 24 is irradiated onto the high-temperature plasma material 21 at about the same time as the first trigger signal is sent (Fig. 36, S607, S608). When the first laser beam is irradiated at a high temperature. The plasma raw material generates a steady flow of the low temperature electric propeller gas from the high temperature slurry raw material, and after the time Atg, at least a portion of the warm plasma gas reaches the discharge field (Fig. 37 S609), as described above, in step S6 In the case of 0 9 , the main trigger signal is sent to the opening SW1 of the power supply means 15 in accordance with the time Td' of the equation (3 4 ). As a result, after the time d1, the switch SW1 is turned on, and the voltage between the first rotating electrode 11 and the second rotating electrode 12 rises. The electric power is sent to the critical 値vP after the current low voltage of 37 and the current low voltage of -139-200908815. As described above, the critical 値V p is the voltage 时 when the discharge current 値 flowing when the discharge occurs is equal to or greater than the critical value 値Ip (S610, S611, S612 in Fig. 37). On the other hand, as described above, in step S609, the timing TL2' according to the equation (43) and the second trigger signal are sent to the second laser source 24a. As a result, the second laser beam 24 reaches the voltage between the electrodes, and the density of the low-temperature plasma gas in the discharge region is concentrated in the discharge within a time range in which the state of the gas discharge by the laser trigger can be started. The location of the field. As a result, a gas discharge occurs in the field of discharge. As described above, in the vicinity of the focus of the second discharge electrode 24, the conductivity is increased by electron emission. Therefore, the position of the discharge channel of the gas discharge is defined at the position where the laser focus is set. That is, the gas discharge position is determined by the second laser beam (S613, S614 of Fig. 37). After the discharge is started, at the timing of passing the Ati, the magnitude of the discharge current reaches the above-mentioned critical 値Ip (S 6 15 of Fig. 7). In the timing Tl+rheat(>Tl+Ati), the electron temperature of the low-temperature plasma gas reaches 20 to 30 eV to become a high-temperature plasma, and EUV emission of the high-temperature plasma is started (step S510 of the 36th diagram, Figure 37 (S616). The low-temperature plasma gas is supplied from the beginning of the discharge to the discharge of the fine discharge channel formed with the gas discharge, and the fine discharge channel of the gas discharge is also continuously supplied with the low-temperature plasma gas, thereby repeating the self-beaming The effect is either based on the closing effect of the self magnetic field. Therefore, the diameter of the fine discharge passage is a pulsating behavior indicating a thinning or widening, but is relatively maintained -140-200908815 in a small state. That is, the self-beaming of the low temperature plasma is repeatedly performed, and the EUV radiation is continued. Here, in the DDP method using the conventional self-beam effect, the LAGDPP method maintains the EUV emission time, for example, 200 ns or less, and thus the time at which the current 値 is equal to or higher than the discharge channel of Ip is low temperature plasma gas to fine The supply of the discharge channel is set by the pulse power supply means 15 and the pair of electrodes (the first electrode 11 and the second electrode 12) from the start of the discharge timing T1 (200 ns + τ heat) or more. The circuit is compared with the DPP method using the conventional self-beam effect, and the LAGDPP method is a long pulse that can realize EUV radiation. The EUV radiation emitted from the high-temperature plasma is collected by the oblique type EUV condensing mirror 2 disposed in the condensing space by the wheel type collector 3, and is provided by the EUV light extracting portion 7 provided in the chamber 1. It is guided to an illumination optical system of an exposure apparatus (not shown). In the EUV generation method of the present embodiment, as in the EUV generation method of the first embodiment, the long pulse of the EUV radiation can be realized by the multi-self-beam method and the non-self-beam method. Further, the heat load applied to the electrode can be made smaller than that of the conventional one, and the occurrence of debris can be suppressed. Further, it is not necessary to have a large current flowing in the discharge space as in the conventional long pulse technique, and to change the waveform of the discharge current in order to maintain the self-beam effect. That is, high precision current control is not required. In particular, in the present embodiment, a part of the low-temperature plasma gas generated by irradiating the first laser beam to the high-temperature electric paddle material reaches the discharge field, and a low-concentration low-temperature plasma gas is discharged to some extent in the discharge field. At the timing of the full state of the 200,908,815 state, the second laser beam is concentrated at a predetermined position in the discharge field, not a vacuum arc discharge but a starting gas discharge. Here, the conductivity is increased by electron emission near the focus of the second laser beam. Therefore, the position of the discharge channel of the gas discharge is drawn at the position where the laser focus is set. That is, the gas discharge position is defined by the second laser beam. As described above, in the EUV radiation system of the present embodiment, the position of the gas discharge channel body is defined, so that the positional stability of the gas discharge channel can be improved with high precision. Further, the pulse width ' of the second laser beam at the position of the discharge channel defining the gas discharge is preferably a short pulse having a certain degree. When the pulse width of the second laser beam is a short pulse, the peak power of the second laser beam becomes large. That is, the ion drift in the field where the second laser beam is concentrated becomes small, and the degree of ionization becomes large. Therefore, the diameter of the discharge channel is finely changed, and the boundary of the discharge channel becomes clear. That is, the diameter of the high-temperature plasma which becomes the EUV radiation source becomes small, and a suitable EUV light source device can be provided as a light source for exposure. The above pulse width is preferably, for example, 1 n s or less. BRIEF DESCRIPTION OF THE DRAWINGS FIGS. 1(a) to 1(f) are timing charts (1) showing the generation of euv of the present invention. 2(a) to 2(f) are timing charts (2) showing the generation of euv of the present invention. Figs. 3(a) and 3(b) are schematic diagrams (1) showing the relationship between the -142 - 200908815 electrode, the material supply position, and the irradiation position of the laser beam for the raw material of the present invention. 4(a) and 4(b) are schematic views (2) for explaining the relationship between the electrode, the material supply position, and the irradiation position of the laser beam for the raw material of the present invention. Figs. 5(a) and 5(b) are schematic diagrams (3) for explaining the correlation between the electrode, the material supply position, and the irradiation position of the laser beam for the material of the present invention. Fig. 6 is a view showing a path until the condition that the high-temperature plasma raw material reaches the EUV radiation condition in the present invention. Fig. 7(a) to Fig. 7(c) are diagrams showing a long pulse (multi-self-beam method) method for explaining the present invention. Figs. 8(a) to 8(c) are views showing a long pulse (non-self-bundling) method of the present invention. Fig. 9 is a view showing a sectional configuration (front view) of an EUV light source device according to an embodiment of the present invention. Fig. 10 is a view showing a sectional configuration (top view) of an EUV light source device according to an embodiment of the present invention. Fig. 11(a) and Fig. 11(b) are diagrams showing an example of collecting light of the second laser beam (starting laser beam). Fig. 12 is a view showing a monitoring ring for explaining the position of the raw material dropped by the raw material supply unit. Fig. 13 is a flowchart (1) - 143 - 200908815 showing the operation of the embodiment shown in Figs. 9 and 10, and Fig. 14 is a view showing the operation of the embodiment shown in Fig. 9 and Fig. 10 Flow chart (2). Fig. 15 is a timing chart showing the operation of the embodiment shown in Figs. 9 and 10. Fig. 16 is a view showing a first modification (front view) of the EUV light source device according to the embodiment of the ninth and tenth drawings. Fig. 17 is a view showing a first modification (top view) of the EUV light source device of the embodiment shown in Fig. 9 and Fig. 10; Fig. 18 is a view showing a second modification (front view) of the EUV light source device of the embodiment shown in Figs. 9 and 10. Fig. 19 is a view showing a second modification (top view) of the EUV light source device of the embodiment shown in Fig. 9 and Fig. 10. Fig. 20 is a view showing a second modification (side view) of the EUV light source device of the embodiment shown in Figs. 9 and 10. Fig. 21 is a view showing a third modification (front view) of the EUV light source device of the embodiment shown in Figs. 9 and 10. Fig. 22 is a view showing a third modification (side view) of the EUV light source device of the embodiment shown in Figs. 9 and 10. Fig. 23 (a) and Fig. 23 (b) are diagrams showing the case where the tubular nozzle for discharging the raw material is attached to the irradiation position of the first energy beam. Figs. 24(a) to 24(c) The figure shows a state in which a high-speed jet nozzle for discharging a raw material is attached to an irradiation position of a first energy beam, and a narrow portion is provided in a part of the inside of the nozzle. -144- 200908815 Fig. 25 is a view showing a state in which a raw material accommodating portion and a high-speed jet nozzle for accommodating a high-temperature plasma raw material are integrally formed. Tables 26(a) and 26(b) are diagrams showing a state in which a concave portion is formed at a position where a beam of a high-temperature electrical material is irradiated. Fig. 27 is a flowchart (1) showing the operation of the first modification of the EUV light source device of the embodiment shown in Fig. 9 and Fig. 1 . Fig. 28 is a flowchart (2) showing the operation of the first modification of the EUV light source device of the embodiment of Fig. 9 and Fig. 1 . Fig. 29 is a timing chart showing the operation of the first modification of the EUV light source device of the embodiment shown in Figs. 9 and 10. Figure 30 is a table jp: a diagram illustrating the adjustment of illumination. Fig. 31 is a view showing a basic configuration example of an EUV light source device which is long-pulsed according to the present invention. 32(a) to 32(e) are timing charts for explaining the operation of the EUV light source device shown in Fig. 31. Fig. 33 is a view showing the operation of the EUV light source device of the embodiment of the present invention which is long pulsed. Fig. 34 is a view showing an example of the configuration of an embodiment of an EUV light source device which is pulsed. Fig. 35 is a diagram showing an example of the configuration of an equal circuit that indicates the power supply means. Fig. 3 is a flow chart showing the operation of the embodiment shown in Fig. 34. Fig. 3 is a timing chart showing the operation of the embodiment shown in Fig. 34 - 145 - 200908815. Fig. 3 is a view showing a path until the high-temperature plasma raw material reaches a condition that satisfies the EUV radiation condition. Figs. 39(a) to 39(c) are diagrams showing the relationship between the plasma current I of the conventional DPP type EUV light source device, the radius γ of the plasma column, and the EUV radiation output. 40(a) to 40(c) are diagrams showing the relationship between the plasma current I, the radius γ of the plasma column, and the EUV radiation output when the conventional DPP type EUV light source device is pulsed long. figure. Fig. 4 is a view showing a configuration example of a conventional DPP type EUV light source device for realizing a long pulse method for EUV radiation. [Main component symbol description] 1 : Cavity 1 a : Discharge space 1 b : Concentration space 1 c : Compartment wall 2 : EUV condenser 3 : Wheel collector 4 , 5 : Vacuum exhaust device 6 : Magnet 7 : EUV Extraction unit 8: pulse power generator 1 1 and 12: discharge electrode-146-200908815 lla, 12a: molten metal for feeding 1 lb, 12b: container 1 lc, 12c: electric power introduction portion 13, 14: gas supply unit 1 3 a : Nozzle 1 3 b : Aerosol 1 5 : Pulse power supply means 20 : Raw material supply unit 20a : Raw material monitor 2 1 : Raw materials 22a, 22b : Electric motor 2 2 c, 2 2 d : Mechanical seals 22e, 22f: Rotating shaft 23: laser beam for raw material (first laser beam) 23a: first laser source 2 3 b : first laser control unit 24: laser beam for starting (second laser beam) 24a: second laser source 24b: second laser control unit 25: material recovery means 2 6 : control unit 2 7 : exposure machine (control unit) 3 0 : raw material supply unit 3 1 : linear material - 147- 200908815 40 : 40a : 40b : 40c : 50 : 50a : 50b : 50c , 50d : 50e : 6 0a: 60b : 62 : 63 : Raw material supply unit liquid raw material supply means raw material supply Raw material supply disk motor unit bus capillary liquid feed 64: Liquid feed heater control unit bus speed jet nozzle the narrow heater portion power supply pressure rises tubular nozzle portion -148-
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JP2007257439A JP2008270149A (en) | 2007-03-28 | 2007-10-01 | Extreme ultraviolet light source device and extreme ultraviolet light generating method |
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JP (1) | JP2008270149A (en) |
KR (1) | KR20080088392A (en) |
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Cited By (4)
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US8648536B2 (en) | 2009-09-01 | 2014-02-11 | Ihi Corporation | Plasma light source |
US9000402B2 (en) | 2009-09-01 | 2015-04-07 | Ihi Corporation | LPP EUV light source and method for producing the same |
TWI580316B (en) * | 2011-03-16 | 2017-04-21 | Gigaphoton Inc | Extreme UV light generation device |
CN110831311A (en) * | 2018-08-08 | 2020-02-21 | 三星电子株式会社 | EUV generating device |
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JP4623192B2 (en) * | 2008-09-29 | 2011-02-02 | ウシオ電機株式会社 | Extreme ultraviolet light source device and extreme ultraviolet light generation method |
KR101622272B1 (en) * | 2008-12-16 | 2016-05-18 | 코닌클리케 필립스 엔.브이. | Method and device for generating euv radiation or soft x-rays with enhanced efficiency |
JP4893730B2 (en) * | 2008-12-25 | 2012-03-07 | ウシオ電機株式会社 | Extreme ultraviolet light source device |
JP5245857B2 (en) * | 2009-01-21 | 2013-07-24 | ウシオ電機株式会社 | Extreme ultraviolet light source device |
JP5504673B2 (en) * | 2009-03-30 | 2014-05-28 | ウシオ電機株式会社 | Extreme ultraviolet light source device |
DE102009020776B4 (en) * | 2009-05-08 | 2011-07-28 | XTREME technologies GmbH, 37077 | Arrangement for the continuous production of liquid tin as emitter material in EUV radiation sources |
JP5687488B2 (en) * | 2010-02-22 | 2015-03-18 | ギガフォトン株式会社 | Extreme ultraviolet light generator |
KR101172622B1 (en) * | 2011-02-28 | 2012-08-08 | 주식회사 에프에스티 | Stabilized euv generation device using the plasma |
EP2555598A1 (en) * | 2011-08-05 | 2013-02-06 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Method and device for generating optical radiation by means of electrically operated pulsed discharges |
WO2013041323A1 (en) | 2011-09-22 | 2013-03-28 | Asml Netherlands B.V. | Radiation source |
TWI596384B (en) * | 2012-01-18 | 2017-08-21 | Asml荷蘭公司 | Source-collector device, lithographic apparatus, and device manufacturing method |
JP5849746B2 (en) * | 2012-02-06 | 2016-02-03 | 株式会社Ihi | Plasma light source |
WO2013141580A1 (en) * | 2012-03-20 | 2013-09-26 | 주식회사 에프에스티 | Extreme ultraviolet light generating device for stabilization and improving energy efficiency through laser beam correction |
KR101324545B1 (en) * | 2012-03-20 | 2013-11-01 | 주식회사 에프에스티 | Laser beam through the stabilization and calibration for EUV generation device to improve energy efficiency |
US20150097107A1 (en) * | 2012-03-20 | 2015-04-09 | Fst Inc. | Apparatus for generating extreme ultraviolet light using plasma |
JP6176138B2 (en) * | 2014-02-06 | 2017-08-09 | ウシオ電機株式会社 | Debris reduction device |
US10314154B1 (en) * | 2017-11-29 | 2019-06-04 | Taiwan Semiconductor Manufacturing Co., Ltd. | System and method for extreme ultraviolet source control |
-
2007
- 2007-10-01 JP JP2007257439A patent/JP2008270149A/en active Pending
-
2008
- 2008-02-18 TW TW97105582A patent/TW200908815A/en unknown
- 2008-03-06 KR KR1020080020862A patent/KR20080088392A/en not_active Application Discontinuation
- 2008-03-26 DE DE200860006286 patent/DE602008006286D1/en active Active
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8648536B2 (en) | 2009-09-01 | 2014-02-11 | Ihi Corporation | Plasma light source |
US9000402B2 (en) | 2009-09-01 | 2015-04-07 | Ihi Corporation | LPP EUV light source and method for producing the same |
TWI580316B (en) * | 2011-03-16 | 2017-04-21 | Gigaphoton Inc | Extreme UV light generation device |
CN110831311A (en) * | 2018-08-08 | 2020-02-21 | 三星电子株式会社 | EUV generating device |
Also Published As
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KR20080088392A (en) | 2008-10-02 |
DE602008006286D1 (en) | 2011-06-01 |
JP2008270149A (en) | 2008-11-06 |
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