200905918 九、發明說明： 【發明所屬之技術領域】 本發明係有關一種發光二極體及其製造方法，旨在提 供一種可具有較高亮度表現，且製程簡化僅需二條導線^ 可完成各發光晶片連接之發光二極體及其製造方法。 【先前技術】 按，由於發光二極體與傳統燈泡比較具有絕對的 勢，例如體積小、壽命長、低電壓/電流驅動、不易破裂1^ =光日寸無顯著之問題、不含水銀（沒有污染問題）、發光今 率=(省電）等特性’且近幾年來發光二極體的發光效率不 斷提升’因此發光二極體在某些領域已漸漸取代日光燈與 白^燈泡，例如需要高速反應的掃描器燈源、液晶顯示器 的月光源或前光源汽車的儀表板照明、交通號誌燈以 — 般的照明裝置等。 — 而且’由於含氮之ΙΠ_ν族化合物為一寬頻帶能隙之 才斗其發光波長可以從紫外光一直涵蓋至紅光，可說是 4乎涵蓋整個可見光的波段。因此，利用含氮化鎵的化合 =半導體，如氮化鎵（GaN)、氮化鋁鎵（GaA1N)、氮化銦^ 中a 1 _)等的發光晶片以廣泛地應用在各種發光二極體 而一般習用之發光二極體係於一基板上置放單—曰 吏曰曰片之正、負極朝上設置，再於該晶片之正、負極 以打線之方式，將諸晶片與一個以上之接腳連接，之後 加以封裝藉以形成一發光二極體；而由於該發光二極體 5 200905918 僅以單一晶片構成一發光二極體，所以其光源並不強烈， 故，前述習用之發光二極體並無法運用於高亮度之所需。 因此便有相關業者將一基板U上置放一個以上之晶 片12，如第一圖所示，使該一個以上之晶片12之正、負 極121、122朝上没置，再於該一個以上之晶片12之正、 ,負極121、丨22上以打上導線13之方式加以串聯後再與接 腳連接，之後再加以封裝藉以形成一發光二極體丨；使該 ^單一發光二極體1可發出較強之光源；惟，各電極連接時 舄要複數導線之連接，如圖所示係串連三個晶片12則需 要4條導線13構成電性連接，不僅製程較為繁複，且導 線13容易因為拉扯而脫離之機會亦增加，進而使不良率 增加。 【發明内容】 有鑑於此，本發明即在提供一種可具有較高亮度表 現’且製程簡化僅需二條導線即可完成各發光晶片連接之 發光二極體及其製造方法。 為達上述目的，本發明中發光二極體係包含有複數連 續排列之發光晶片，各發光晶片表面係設有分離之正、負 極而相鄰發光晶片之正、負極間係藉由導電通道連接， 而非#]用$線連接，使各發光晶片得以串聯 有較高亮度表現1可改善習有各發光晶片= 由V線串聯，使得製程較為繁複之缺點。 9 6 200905918 【實施方式】 為能使貴審查委員清楚本發明之主要技術内容， 以及實施方式，茲配合圖式說明如下： 本發明「發光二極體及其製造方法」，如第二圖所示， 該發光二極體2係至少設有複數個發光晶片，如圖所示係 設有第一、二發光晶片21、22，各發光晶片21、22表面 係設有分離之正、負極23、24，而二發光晶片21、22係 連續排列，其中係由第一發光晶片21之負極24靠近第二 發光晶片22之正極23,亦可由第一發光晶片之正極靠近 第二發光晶片之負極。 其中，第一、二發光晶片21、22之負、正極24、23 間係設有用於連接該正、負極23、24之導電通道25，該 導電通道25係由第二發光晶片之正極23沿著第二發光晶 片22之外圍，而朝第一發光晶片21之負極24延伸，以 將第一、二發光晶片21、22相互串聯；當然，亦可由第 一、二、三發光晶片21、22、26利用導電通道25相互串 聯，如第三圖所示，而各發光晶片可如圖所示為一直線之 排列，亦可以為不同形式之排列，如第四圖所示。 而當各發光晶片封裝時，如第五圖所示，將複數串聯 連接之發光晶片（可為第一、二、三發光晶片21、22、26) 置於一殼體31中，該殼體31中設有至少二個分離的支架 32、33以及封裝膠體34，各第一、二、三發光晶片21、 22、26係固定於其中一支架32上，再利用導線35構成 正、負極23、24與二支架32、33之連接。 200905918 請同時參閱第六圖所示一 2卜22、26間係利用導電通道 晶片 線35分別連接於第一發光晶 亭/再稭由二導 及第三發光晶片26盥另一 「八一支架32，以 整體發光二極體2通带後上而形成電性連接，使 具有較尚売度表現，且每―發光晶片之& ，而 =而整體發光二極體（串聯三個發光;·形 ，10. 5伏特，故該發光二極體 1 之電源使用（例如_高亮度⑽杯燈或車Ϊ 驟：而本發明發光二極體之製造方法，係包含有下;步 提供複數發光晶片，且各發光晶片係連續排列； 、於發光晶片表面上形成分離之正、負極， 相鄰發光晶片正、負極之導電通道，以將各發光 聯’其中形成正、負極以及導電通道之方式 』 限於下列幾種方式： 匕括但不 卜於步驟Α之後先於第一、二、三發光晶片2卜22、 =表面上全面鍍上金屬膜41，再進行微影蝕刻，則形成 分離之正、負極23、24以及導電通道25,如第七圖所^。 2、於步驟A之後先於第一、二、三發光晶片21、22、 26表面上全面塗佈光阻層42，並進行微影成像後，鑛上 金屬膜43再進行光阻浮雕使金屬成像’而形成分離之 正、負極23、24以及導電通道25，如第八圖所示。 、於步驟A之後先於第 —* 、 -發光晶片21、22 200905918 2再該鮮43上係_案你， 電通、首^而形成分離之正、負極23、24以及導 電通迢25,如第九圖所示。 及導 的是’本發明相較於f有係具有下 發明之發光二極體係設有魏_ Μ 日日片，使整體發光二極體具有較高亮度表現。之發光 2、 複數串聯連接之發光晶 而非使用導線連接，且因—般導線之材質^道，、，、 )導線之使用外’更可降低成本。’、〜可減 3、 各發光晶>{連接時減少導線之使用 且更可降低導線脫離之機會，可確保=化製 降低不良率。 r生連接’而 4、 由三個發光晶片串聯所形成之發光二 作電壓為10. 5伏特，故可直接使用於供應12胜，一工 使用（例如MR16高亮度LED杯燈或車燈），而=之電源 他整流或變壓裝置。 而要接其 如上所述’本發明提供一種較佳可行之發 其製造方法，爰依法提呈發明專利之申請；惟，^極體及 施說明及圖式所示，係本發明較佳實施例者，並=上之貫 限本發明’是以，舉凡與本發明之構造、裝 二侷 =、雷同者，均應屬本發明之創設g的及中請專 9 200905918 【圖式簡單說明】 第一圖係為習知發光二極體結構之剖面示意圖。 第二圖係為本發明中二個發光晶片串聯之結構 第三圖係為本發财三個發光晶片㈣之 ^ 第五圖係為本發明中發光1=:之:構示意圖。 第六圖係為本發明中發光二極體之部分：：圖二 第七圖係為本發明中形成導電 不思圖。 意圖。 〜實施例之流程示 第八圖係為本發明中形成導電通育 意圖。 < 第〜實施例之流程示 第九圖係為本發明中形成導電通耸★ 意圖。 逼第三實施例之流程示 【主要元件代表符號說明】 發光二極體1 基板11 晶片12 正極121 負極122 導線13 發光二極體2 第一發光晶片21 第二發光晶片22 10 200905918 正極23 負極24 導電通道25 第三發光晶片26 殼體31 支架32、33 封裝膠體34 導線35 金屬膜41 光阻層42 光罩43 圖案431200905918 IX. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode and a method of manufacturing the same, and aims to provide a high-brightness performance, and the process simplification requires only two wires to complete each light-emitting A light-emitting diode connected to a wafer and a method of manufacturing the same. [Prior Art] Press, because the light-emitting diode has an absolute potential compared with the conventional light bulb, such as small volume, long life, low voltage/current drive, and not easy to break. 1^ = no significant problem with light and light, no mercury ( No pollution problem), luminous rate = (power saving) and other characteristics 'and the luminous efficiency of LEDs has been increasing in recent years'. Therefore, LEDs have gradually replaced fluorescent lamps and white bulbs in some fields, for example, A high-speed reaction scanner light source, a liquid crystal display moon light source or a front light source car dashboard illumination, a traffic light lamp, and the like. - And 'Because the nitrogen-containing ΙΠ ν compound is a wide-band energy gap, its illuminating wavelength can be covered from ultraviolet light to red light, which can be said to cover the entire visible light band. Therefore, the use of a gallium nitride-containing compound = semiconductor, such as gallium nitride (GaN), aluminum gallium nitride (GaA1N), indium nitride (a 1 _), etc., is widely used in various light-emitting diodes. The conventional light-emitting diode system is placed on a substrate, and the positive and negative electrodes of the single-chip are placed upward, and the wafers and one or more of the wafers are connected to the positive and negative electrodes of the wafer. The pin is connected, and then packaged to form a light emitting diode; and since the light emitting diode 5 200905918 constitutes only one light emitting diode by a single wafer, the light source is not strong, so the conventional light emitting diode The body cannot be used for high brightness. Therefore, a related manufacturer places one or more wafers 12 on a substrate U. As shown in the first figure, the positive and negative electrodes 121 and 122 of the one or more wafers 12 are not placed upward, and the one or more The positive and the negative electrodes 121 and 22 of the wafer 12 are connected in series by the wire 13 and then connected to the pins, and then packaged to form a light-emitting diode 丨; the single light-emitting diode 1 can be A strong light source is emitted; however, when the electrodes are connected, a plurality of wires are connected. As shown in the figure, three wires 12 are connected in series, and four wires 13 are required to form an electrical connection, which is not only complicated but also easy to wire 13 The chances of getting out of the game are also increased, which in turn increases the rate of non-performing. SUMMARY OF THE INVENTION In view of the above, the present invention provides a light-emitting diode that can have a higher brightness performance and that requires only two wires to complete the connection of each light-emitting chip and a method of manufacturing the same. In order to achieve the above object, the light-emitting diode system of the present invention comprises a plurality of consecutively arranged light-emitting chips, wherein the surface of each light-emitting chip is provided with a separated positive and negative electrode, and the positive and negative electrodes of the adjacent light-emitting chip are connected by a conductive path. Instead of #], the $-line connection allows each illuminating chip to be connected in series with a higher brightness performance. 1 It can improve the conventional illuminating chip = the series connection of the V-line, which makes the process more complicated. 9 6 200905918 [Embodiment] In order to enable the reviewing committee to understand the main technical contents and embodiments of the present invention, the following description is given with reference to the following drawings: "Light-emitting diode and manufacturing method thereof" of the present invention, as shown in the second figure The light-emitting diode 2 is provided with at least a plurality of light-emitting chips, and the first and second light-emitting chips 21 and 22 are disposed as shown in the figure, and the surface of each of the light-emitting chips 21 and 22 is provided with separated positive and negative electrodes 23 24, the two illuminating wafers 21, 22 are continuously arranged, wherein the negative electrode 24 of the first luminescent wafer 21 is adjacent to the positive electrode 23 of the second luminescent wafer 22, or the positive electrode of the first luminescent wafer is adjacent to the negative electrode of the second luminescent wafer. . The conductive channels 25 for connecting the positive and negative electrodes 23 and 24 are disposed between the negative and positive electrodes 24 and 23 of the first and second light-emitting chips 21 and 22, and the conductive channels 25 are formed by the positive electrodes 23 of the second light-emitting chip. The periphery of the second luminescent wafer 22 extends toward the negative electrode 24 of the first luminescent wafer 21 to connect the first and second luminescent wafers 21, 22 to each other; of course, the first, second, and third luminescent wafers 21, 22 26, the conductive channels 25 are connected in series with each other, as shown in the third figure, and each of the light-emitting chips may be arranged in a straight line as shown in the figure, or may be arranged in different forms, as shown in the fourth figure. When the illuminating chip is packaged, as shown in FIG. 5, a plurality of illuminating chips (which may be the first, second, and third illuminating chips 21, 22, 26) connected in series are placed in a casing 31. 31 is provided with at least two separate brackets 32, 33 and an encapsulant 34. Each of the first, second and third illuminating chips 21, 22, 26 is fixed on one of the brackets 32, and the lead 35 is used to form the positive and negative poles 23 , 24 and the two brackets 32, 33 connection. 200905918 Please also refer to the figure shown in Figure 6. 2, 22, 26 are connected to the first illuminating crystal pavilion by using the conductive channel wafer line 35, and then the second and third illuminating wafers 26 盥 another "August bracket" 32, the overall light-emitting diode 2 is formed on the back of the passband to form an electrical connection, so that the performance of the higher brightness, and each of the "lighting chip" and = and the overall light-emitting diode (three lights in series; · Shape, 10. 5 volts, so the power of the light-emitting diode 1 is used (for example, _ high-brightness (10) cup lamp or rut: and the manufacturing method of the light-emitting diode of the present invention includes the following; a light-emitting chip, wherein each of the light-emitting chips is continuously arranged; forming a separated positive and negative electrode on the surface of the light-emitting chip, and conducting conductive paths of the positive and negative electrodes of the adjacent light-emitting chip to form the positive, negative and conductive paths therein. The method is limited to the following ways: 匕 但 但 但 但 Α Α Α 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 第一 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 、 Positive and negative electrodes 23, 24 Conductive channel 25, as shown in the seventh figure. 2. After step A, the photoresist layer 42 is completely coated on the surfaces of the first, second and third light-emitting chips 21, 22, 26, and after lithography imaging, the mine The upper metal film 43 is then subjected to photoresist embossing to image the metal to form separate positive and negative electrodes 23, 24 and a conductive path 25, as shown in the eighth figure. After step A, the first -*, --emitting wafer 21 is preceded. 22, 200905918 2 The fresh 43 system _ case, the electric pass, the first ^ form the separation of the positive, negative 23, 24 and conductive 迢 25, as shown in Figure IX. And the guide is 'the invention The light-emitting diode system having the following invention has a Wei Μ Μ day film, so that the overall light-emitting diode has a higher brightness performance. The light-emitting 2, the plurality of series-connected light-emitting crystals are connected instead of using wires, and Because the material of the wire is ^, ,, , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , can ensure = chemical system reduces the bad rate. r raw connection 'and 4, by three luminescent crystals The light-emitting diode formed by the series has a voltage of 10.5 volts, so it can be directly used for supplying 12 wins, for one work (for example, MR16 high-brightness LED cup lamp or lamp), and = power supply for its rectification or transformer device. However, as described above, the present invention provides a preferred and feasible method for manufacturing the same, and an application for the invention patent is provided according to the law; however, the embodiment of the invention and the description and the drawings are preferred embodiments of the present invention. In the case of the present invention, the present invention is based on the construction of the present invention, the second installation, and the same, and should be the creation of the present invention and the special application 9 200905918. The first figure is a schematic cross-sectional view of a conventional light-emitting diode structure. The second figure is the structure of two light-emitting chips connected in series in the present invention. The third figure is the three light-emitting chips (four) of the present invention. The fifth figure is the schematic diagram of the light-emitting 1=: The sixth figure is a part of the light-emitting diode of the present invention: Fig. 2 The seventh figure is a conductive pattern formed in the present invention. intention. The flow of the embodiment is shown in Fig. 8. The eighth figure is the intention of forming a conductive communication in the present invention. < Flow of the first embodiment The ninth diagram is intended to form a conductive pass in the present invention. The flow of the third embodiment is shown [main element representative symbol description] light-emitting diode 1 substrate 11 wafer 12 positive electrode 121 negative electrode 122 wire 13 light-emitting diode 2 first light-emitting chip 21 second light-emitting chip 22 10 200905918 positive electrode 23 negative electrode 24 Conductive channel 25 Third luminescent wafer 26 Housing 31 Bracket 32, 33 Encapsulant 34 Conductor 35 Metal film 41 Photoresist layer 42 Photomask 43 Pattern 431