TW200904774A - Dielectric ceramic and laminated ceramic capacitor - Google Patents

Dielectric ceramic and laminated ceramic capacitor Download PDF

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TW200904774A
TW200904774A TW97111695A TW97111695A TW200904774A TW 200904774 A TW200904774 A TW 200904774A TW 97111695 A TW97111695 A TW 97111695A TW 97111695 A TW97111695 A TW 97111695A TW 200904774 A TW200904774 A TW 200904774A
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Taiwan
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dielectric
barium titanate
crystal
dielectric ceramic
rare earth
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TW97111695A
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Chinese (zh)
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TWI401235B (en
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Yusuke Azuma
Youichi Yamazaki
Daisuke Fukuda
Hideyuki Osuzu
Jyun Ueno
Masaaki Nagoya
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Kyocera Corp
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Abstract

To provide a dielectric ceramic, which has high permittivity, has specific permittivity which varies depending upon temperature so as to satisfy X5R characteristics in EIA specifications, and can realize high insulation resistance even in the case of low applied voltage, and a laminated ceramic capacitor which comprises the dielectric ceramic as a dielectric layer and is excellent in service life properties in a high-temperature load test. A dielectric ceramic composed mainly of barium titanate having a different Ca concentration. The dielectric ceramic contains, based on 100 moles of barium constituting the dielectric ceramic, 0.05 to 0.3 mole, in terms of V2O5, of vanadium, 0 to 1 mole, in terms of MgO, of magnesium, 0 to 0.5 mole, in terms of MnO, of manganese, and 0.4 to 1.5 moles, in terms of RE2O3, of a rare earth element (RE) selected from yttrium, dysprosium, holmium, and erbium. In an X-ray diffraction chart of the dielectric ceramic, the diffraction intensity of (004) plane, which shows tetragonal barium titanate, is larger than the diffraction intensity of (400) plane which shows cubic barium titanate.

Description

200904774 九、發明說明: 【發明所屬之技術領域】 本發明係關於由以鈦酸鋇為主成分的結晶粒 介電陶竞、以及將其使用為介電質層成 【先前技術】 充尾谷益〇 近年’隨電子電路高密度化對電子零件小型化的要 提高’積層陶曼電容器的小型化、大電容化正急 f'中。隨此現象,積層陶&電容器中每!層的介電質 層化演進,並要求即使薄層化仍可維持當作電容器用之可 靠度的介電陶竟。特別係就使用高額定電壓的中耐壓用電 容器小型化、大電容化方面,對介電陶究要求非常高 靠度。 習知,就構成内部電極層的材料係使用卑金屬,且靜電200904774 IX. Description of the Invention: [Technical Field] The present invention relates to a dielectric particle composed of barium titanate as a main component, and its use as a dielectric layer [Prior Art] In recent years, the increase in the density of electronic circuits has increased the miniaturization of electronic components. With this phenomenon, each of the laminated ceramic & capacitors! The dielectric stratification of the layer evolves and requires that the dielectric ceramics used as a capacitor can be maintained even if thinned. In particular, in terms of miniaturization and large capacitance of a medium-voltage capacitor using a high rated voltage, it is highly demanding for dielectric ceramics. Conventionally, the material constituting the internal electrode layer is made of a base metal and is electrostatically charged.

電容溫度變化(以下稱「介電常數的溫度變化」)滿足EH 規格的X5R特性(-55〜85〇C、ΑΟ±15%以内)的技術,有如 I;本案申請人在專利文獻1中所揭示的介電陶兗。 該項技術係將利用以鈣濃度不同的2種鈦酸鋇為主體 之結晶粒子形成介電陶瓷,藉由在其中含有鎂、稀土族元 素(RE)及錳等,便將結晶粒子形成核殼結構,藉此提升介 電常數,且在絕緣電阻(IR)的高溫負荷試驗中之壽命特性 獲改善。但是,隨小型化、大電容化的急遽進展,而要求 更加提升可靠度。 再者,構成積層陶莞電容器的介電質層用介電陶兗,係 有如上述專利文獻1,介電常數的溫度變化滿足εια規格 97111695 5 200904774 的X5R特性,且在絕緣電阻的高溫負荷試驗中能提升壽命 特性的介電陶瓷,尚已知有如專利文獻2、3所揭示。 就專利文獻2所揭示的介電陶瓷,係使在構成該介電陶 瓷的結晶粒子主成分之鈦酸鋇中,含有鎂、稀土族元素 及釩等,而在X射線繞射圖中,使(2〇〇)面的繞射線盘(〇〇2) 面的繞射線呈部分重疊而形成較寬繞射線的結晶構造(所A technique in which the temperature change of the capacitor (hereinafter referred to as "temperature change of the dielectric constant") satisfies the X5R characteristic of the EH specification (-55 to 85 〇C, ΑΟ±15% or less) is as in I; the applicant of the present application is in Patent Document 1. Revealed the dielectric pottery. This technology uses a crystal particle composed of two kinds of barium titanate having different calcium concentrations to form a dielectric ceramic. The crystal particles are formed into a core shell by containing magnesium, a rare earth element (RE) and manganese. The structure, thereby increasing the dielectric constant, and the life characteristics in the high temperature load test of the insulation resistance (IR) is improved. However, with the rapid development of miniaturization and large capacitance, it is required to further improve reliability. Further, the dielectric ceramic layer for the dielectric layer constituting the laminated ceramic capacitor is as described in Patent Document 1, and the temperature variation of the dielectric constant satisfies the X5R characteristic of the εια specification 97111695 5 200904774, and the high temperature load test of the insulation resistance. Dielectric ceramics capable of improving life characteristics are also known as disclosed in Patent Documents 2 and 3. The dielectric ceramic disclosed in Patent Document 2 contains magnesium, a rare earth element, vanadium, or the like in the barium titanate which is a main component of the crystal particles constituting the dielectric ceramic, and is formed in an X-ray diffraction pattern. The ray of the (2〇〇) plane around the ray disk (〇〇2) partially overlaps to form a crystal structure with a wide ray.

謂「核殼結構」),藉此達改善絕緣破壞電壓、與在絕緣 電阻的尚溫負荷試驗中之壽命特性。 再者,就專利文獻3所揭示的介電陶究,藉由依將欽酸 鋇中所固溶的鈒價數調整為接近4價範圍内,來抑制結晶 =中所存在的電子移動,且抑制㈣鈦酸鋇發生過度= 政與釩化合物析出情形’形成在結晶粒子中釩呈適度濃产 ==相的核殼結構’藉此便將提升高溫負荷試驗“ L專利文獻1 ] -桊寻利特開2〇〇6-1 5645〇號公報 [專利文獻2]曰本專利特開平124785號公報 [專利文獻3]日本專利㈣2_ —期 【發明内容】 υ A報 (發明所欲解決之問題) ==專利文獻Η所揭示介電陶 且電常數的溫度變化滿足ΕΙΑ規格的X5R特性^電率 加電遷較低時,可獲得高絕緣電阻,卜备所施 加時,則出現絕緣電阻降低較大的問題所施加電壓增 再者,設有以該等介電陶兗為介電f層的積層”p 97111695 200904774 口。田口 ;丨電陶瓷的絕緣電阻降低,導致人+ # 的情況,其頗難滿;^、、^+心^^電質層薄層化 所以,太旅兩足冋,皿負何试驗中的壽命特性。 發明之目的在於提供高介電率且介雷 度變化滿足EU規格的X5R特性,即使=^吊數的溫 情況仍可獲得高絕緣電阻,當電壓择=壓較低的 較小的介電陶瓷。 &quot;夺的蟯緣電阻降低 此種介電陶瓷為介 捉仏具備有以 性優異之_ ^ 貞荷試驗中的壽命特 、丨傻兵您槓層陶瓷電容器。 (解決問題之手段) 本發明的介電陶£係以鈦酸 該鈦酸鋇的鋇1〇〇莫耳之 成:且相對於構成 0 05〜0 3苴I s有.釩依V2〇5換算計 曾叶(^莖依邮換算計㈠莫耳〜猛依㈣換 尤计 .5莫耳、以及從釔、鏑、鈥及鉬中噥据Α 土族元素_依_3換算計^h5 1二:=稀 粒子係具有:由以上述鈦酸鋇為主體,且上述料 ^在〇.2原子%以下的結晶粒子所構成第工結晶群,以及 ::上述鈦酸鋇為主體,且上述_在〇4原子%以上 的、·”曰粒子所構成第2結晶群的介電陶£ ;其中,該介· 陶究的X射線繞射圖中’表示正方晶系欽酸鎖的(〇〇4)面 繞射強度大於表示立方晶系鈦酸鋇的(4GG)面繞射強度。 再者’上述介電陶莞中’相對於構成上述鈦酸鋇的鋇 1〇〇莫耳之下,最好含有:上述鎂依MgO換算計0〜0 }莫 耳、上述錳依MnO換算計0〜5莫耳、及從釔、鏑、鈥及 餌中選擇1種的上述稀土族元素(抓)依跗2〇3換算計 97111695 200904774 〇. 5〜1. 5莫耳。 上述介電陶瓷最好上述鎂含有量依Mg〇換算計〇莫耳、 及/或上述猛含有量依Mn〇換算計〇莫耳。 上述介電陶瓷最好相對於構成上述鈦酸鋇的鋇1⑽莫 耳之下,含有:上述釩依〜〇5換算計〇1〜〇·3莫耳、上述 鎂依MgO換算計〇. 3〜9莫耳、錳依Μη〇換算計〇.的〜〇 ^ 莫耳' 及從釔、鏑、鈦及铒中選擇丨種的上述稀土族 Γ⑽依RE2〇3換算計〇4〜〇9莫耳,且上述結晶粒子的平 均粒徑為0. 33〜57// m。 上述介電陶瓷係相對於構成上述鈦酸鋇的鋇1〇〇莫耳 之下’最好更含有試依Tb4〇7換算計〇3莫耳以下的範圍 再者,上述介電陶瓷係相對於構成上述鈦酸鋇的鋇1〇〇 2耳之下,最好更含有镱依Yb2〇3換算計〇6莫耳以下 :本發明的積層陶变電容器’其特徵在於:由上述介電陶 瓷構成的”電貝層與内部電極層之積層體構成。 :夕上’之所以將稀土族元素設為「跗」,係根據週期表 中勺稀土族元素英文符號(Rare earth)。 (發明效果) ―⑴本發明的介電陶錢相對於鈦酸鋇之下,分別依既 :::曰釩、鎂、稀土族元素⑽及錳’而介電陶 处曰日日/、子係由以鈦酸鋇為主體,且鈣濃度不同的2種 子構成’同時,在介電陶宪的X射線繞射圖中,表 97111695 200904774 示鈦酸鋇正方晶系的(004)面之繞射強度大於表示鈦酸鋇 立方晶系的(400)面之繞射強度。藉此,可形成高介電率 且介電常數的溫度變化滿足ΠΑ規格的X5R特性。此外, 當所施加電壓較低的情況時,可獲得高絕緣電阻,且當增 加電壓時的絕緣電阻降低較小(絕緣電阻的電壓依存性較 小)之介電陶究。 (2)本發明的介電陶瓷係相對於構成鈦酸鋇的鋇1〇〇莫 Γ:下,含有:鎂依处0換算計0J.1莫耳、錳依MnO換 算汁0 0.5莫耳、以及從釔、鏑、鈥及餌中選擇丨種的稀 土族元素(RE)依RE4換算計〇5〜15莫耳,且介電陶瓷 的X射線繞射圖中,表示鈦酸鎖正方晶系的⑽4)面之繞 f強度大於表示鈦酸鋇立方晶系的(彻)面之繞射強度。 藉此便可使”電常數的溫度變化滿足HA規格的KM特 挫^且虽將介電陶瓷薄層化並使用於積層陶瓷電容器的介 電g層吟,可確保高絕緣性與高溫負荷壽命。 曹⑶本‘明的介電陶变中,當將鎮含有量設為依㈣換 开十0莫耳時,可獲兩介電率且介電常數的溫度變化可滿 A規格的x7R特性’同時當所施加電壓較低時,可獲 7 I彖電阻’且絕緣電阻的電壓依存性更小之介 瓷。 ϋ本&amp;月的;1電陶究中’當將鍾含有量設為依MnO換 二莫耳時,可獲得絕緣電阻的電壓依存性較小之介電 陶瓦,且可降低介電損失。 (5)本發明的介電”最好相對於構成鈦酸鋇的鋇⑽ 97111695 200904774 二:有:銳依Μ換算計〇. 1〜〇. 3莫耳、鎮依_ 、、开:· · 9莫耳、錳依Mn〇換算計0.05〜〇.5莫耳、 以及從纪、鋼、鈦及紐由、联埋, 、 祕換算計0.W ^種的稀土族元素⑽依 莫耳,同時結晶粒子的平均粒徑將設 二:率藉獲得能滿…格的 °甩率低’丨電損失的介電陶瓷。 莫:i本:明:人介電陶兗中,當相對於構成鈦酸鋇的鋇1 〇 0 ,=時=依偏7換算計0.3莫耳以下之範圍 種介二菩#::介電陶兗的絕緣電阻。例如當將此 層陶竞電容器的介電質層時,可更加 开间/皿負何5式驗中的壽命特性。 (7)本發明的介電陶瓷中 I 干田相對於構成鈦酸鋇的鋇100 ^耳之下’更含有鏡依Yb2〇3換算計〇6 當胸几&quot;减J &amp;成飢度變化時的介電陶兗之介電 吊數變化。例如將此種介雷 电 介♦所勗„ ,. m 瓷使用為積層陶瓷電容器的 ”’亚使用大型燒成爐製造多數積 =即使燒成爐内出現溫度變動,仍可減少各個積^ 電谷器的靜電電容變動,可提升良率。 、 光 (8 )本發明的積層陶奢雷空 介電^ 糟由介電質層使用上述 便可獲得高介電率,且介電常數的温度變化滿 規格的X5R特性’更可滿足⑽特性,即使將介带 質層溥層化仍可確保高絕緣性。_ 一、 电 驗中的壽命特性優異之積層陶究電容器。彳同溫負荷試 【實施方式】 ° 97111695 200904774 圖斤示係w電陶究的放大圖,屬於結晶粒子與晶界相 的示意圖。本發明的介電陶錢由:構成以㈣度0.2原 子%以下的鈦酸鎖為主體之第1結晶群的結晶粒子la、以 妈濃度G. 4料UX上的鈦酸鋇^體之第2結晶群的結 晶粒子1 b、以及晶界相2構成。It is called "core-shell structure", which is used to improve the insulation breakdown voltage and the life characteristics in the insulation load test. Further, in the dielectric ceramics disclosed in Patent Document 3, by adjusting the valence of the ruthenium dissolved in the bismuth citrate to a value close to the valence of 4, the electron mobility existing in the crystallization = is suppressed and suppressed. (4) Excessive occurrence of barium titanate = precipitation of vanadium and chemical compounds 'formed in the crystal particles, vanadium is moderately concentrated == phase of the core-shell structure', thereby raising the high temperature load test" L Patent Literature 1] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. Hei. No. Hei. No. Hei. No. Hei. No. Hei. == Patent Document Η Reveals that the temperature variation of the dielectric constant and the electrical constant satisfies the X5R characteristic of the ΕΙΑ specification. When the electrical potential plus the electromigration is low, a high insulation resistance can be obtained, and when the preparation is applied, the insulation resistance is lowered. For the larger problem, the voltage applied is increased, and the dielectric layer of the dielectric ceramic layer is used as the layer of the dielectric f layer "p 97111695 200904774". Taguchi; the insulation resistance of the ceramics is reduced, resulting in the situation of human + #, which is quite difficult; ^, ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ Life characteristics. The purpose of the invention is to provide a high dielectric constant and a change in the dielectric constant of the X5R characteristic of the EU specification, even if the temperature of the ^^ number of cases can still obtain a high dielectric resistance, when the voltage is lower = the lower dielectric ceramic . &quot;The reduction of the edge-resistance of the dielectric ceramics is excellent in the performance of the _ ^ 贞 试验 试验 您 您 您 您 您 您 您 您 您 您 您 您 您 您 您 您 您 杠 杠 杠 杠 杠 杠 杠 杠 杠 杠 杠 杠(Means for Solving the Problem) The dielectric ceramics of the present invention are made of titanic acid and barium titanate: and the composition is 0 05~0 3 苴I s. Vanadium is V2〇5 Conversion meter Zengye (^ stem according to the price of the card (a) Moer ~ Mengyi (four) for the special meter. 5 Mo, and from the 钇, 镝, 鈥 and molybdenum according to the Α 族 _ _ _ _ _ _ _ _ _ 2: The dilute particle system has a working crystal group composed of the above-mentioned barium titanate and the crystal particles of the above-mentioned material in an amount of not more than 2 atom%, and: the above-mentioned barium titanate is mainly used, and the above _In the X-ray diffraction diagram of the X-ray diffraction diagram of the · 曰 〇 〇 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; 〇4) The diffraction intensity of the surface is greater than the diffraction intensity of the (4GG) plane representing the cubic crystal barium titanate. In addition, the above-mentioned dielectric ceramics are the most inferior to the 钡1〇〇mole constituting the above-mentioned barium titanate. Good content: the above-mentioned magnesium in terms of MgO conversion 0~0} Moer, the above manganese in terms of MnO conversion 0~5 mol, and one of the above rare earth elements selected from 钇, 镝, 鈥 and bait跗 〇 〇 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 971 Preferably, the dielectric ceramic is contained below the 钡1(10) mole constituting the barium titanate, and the cadmium is in the range of 〇1 to 〇3 mol, and the magnesium is in terms of MgO. 3. 3~9 Mo, manganese Μ 〇 〇 〇 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 的 及 的 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及 及〇9摩尔, and the average particle diameter of the above crystal particles is 0. 33~57 / / m. The above dielectric ceramic system is better than the 钡1〇〇莫耳 constituting the above-mentioned barium titanate. In the range of 3 mA or less in terms of Tb4〇7, the dielectric ceramic is preferably contained in the 钡1〇〇2 ear of the barium titanate. 6 ohms or less: The laminated ceramic capacitor of the present invention is characterized in that: the laminated body of the electric shell layer and the internal electrode layer composed of the above dielectric ceramic The reason why the rare earth element is set to "跗" is based on the Rare earth element of the rare earth element in the periodic table. (Invention effect) - (1) The dielectric pottery of the present invention is relative to titanic acid钡 , , , , : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : 'At the same time, in the X-ray diffraction diagram of the dielectric Tao Xian, the table 97111695 200904774 shows that the diffraction intensity of the (004) plane of the barium titanate tetragonal system is larger than that of the (400) plane representing the barium titanate cubic system. Shooting intensity. Thereby, a high dielectric constant can be formed and the temperature variation of the dielectric constant satisfies the X5R characteristic of the ΠΑ specification. Further, when the applied voltage is low, a high insulation resistance can be obtained, and when the voltage is increased, the insulation resistance is lowered less (the voltage dependence of the insulation resistance is small). (2) The dielectric ceramic according to the present invention is characterized in that: 镁1〇〇 Γ 构成 构成 构成 下 下 下 下 下 下 下 下 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 And the rare earth element (RE) selected from lanthanum, cerium, lanthanum and bait is 〜5 to 15 mol in terms of RE4, and the X-ray diffraction pattern of the dielectric ceramic indicates the titanate-locked tetragonal system The (f)4) plane w-strength is greater than the diffraction intensity indicating the (complete) face of the barium titanate cubic system. In this way, the temperature variation of the electric constant can satisfy the KM characteristic of the HA specification, and the thinning of the dielectric ceramic and the dielectric g layer for the laminated ceramic capacitor can ensure high insulation and high temperature load life. Cao (3) In the dielectric metamorphology of the Ming, when the content of the town is set to (10), the temperature of the dielectric constant can be changed to the x7R characteristic of the A specification. 'At the same time, when the applied voltage is low, 7 I 彖 resistance can be obtained and the voltage dependence of the insulation resistance is smaller. ϋ本 &amp;月;1Electrical chemistry<When the clock content is set to When MnO is exchanged for two moles, a dielectric ceramic tile having a small voltage dependence of the insulation resistance can be obtained, and the dielectric loss can be reduced. (5) The dielectric of the present invention is preferably relative to the yttrium yttrium titanate. (10) 97111695 200904774 II: There are: Μ Μ Μ Μ 1 1 1 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 From the age, steel, titanium and newcomers, buried, and secret conversion 0. W ^ species of rare earth elements (10) Imol, while the average particle size of the crystal particles will II: full rate can be obtained by lattice ° rejection rate ... 'Shu dielectric loss of the dielectric ceramic. Mo: i Ben: Ming: In the case of human dielectric pottery, when compared with the composition of strontium titanate 钡1 〇0, ==================================================== The insulation resistance of the pottery. For example, when the dielectric layer of this layer of ceramics is used, it is possible to change the life characteristics of the test. (7) In the dielectric ceramic of the present invention, I dry field is compared with the 钡100 耳 构成 ' 更 更 更 更 更 更 更 更 当 当 当 当 当 当 当 当 当 当 当 当 当 当 当 当 当 当 当The change in the dielectric suspension of the dielectric ceramics at the time of change. For example, the use of such a medium-density dielectric ♦ „ „ , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The capacitance of the device changes, which can improve the yield. Light (8) The laminated ceramics of the present invention has a high dielectric constant by using the above dielectric layer, and the X5R characteristic of the full-scale temperature change of the dielectric constant is more satisfying (10) characteristics. Even if the interlayer of the interlayer is layered, high insulation can be ensured. _ I. A laminated ceramic capacitor with excellent life characteristics in the test.彳The same temperature load test [Embodiment] ° 97111695 200904774 Figure shows the enlarged view of the electric ceramics, which is a schematic diagram of the crystalline particles and the grain boundary phase. The dielectric pottery of the present invention consists of a crystal particle la of a first crystal group mainly composed of a titanate lock having a (four) degree of 0.2 atom% or less, and a titanate of a barium titanate having a mother concentration of G. 4 material UX. The crystal particles 1 b of the 2 crystal group and the grain boundary phase 2 are composed.

本發明介電陶变的特徵在於:以鈦酸鋇為主成分,並相 對:構成該鈦酸鋇的鋇1〇〇莫耳之下,含有:釩依LA 換算计0· 05〜0. 3莫耳、鎂依Mg0換算計^〜丨莫耳、錳依 MnO換算計〇〜〇.5莫耳、以及倾、鏑、鈥及財選擇】 種的稀土族元素(RE)依RE4換算計0.4〜1.5莫耳,且介 電陶兗的X射線繞射圖巾,表示鈦酸鋇正方晶系的⑽4) 面之繞射強度大於表示鈦酸鋇立方晶系的(侧)面之繞射 強度。藉此,介電陶瓷的介電常數便可達3〇〇〇以上,且 介電常數的溫度變化滿足EIA規格的X5R特性,當每單位 厚度(1/ζιη)所施加直流電壓值為315¥與12.”時的絕緣 電阻均可4 2xlG8Q以上,且絕緣電阻幾乎無降低的介電 陶瓷。 即,理由係在相對於構成鈦酸鋇的鋇丨〇〇莫耳之下,釩 .3有里依V2〇5換算計較少於0. 05莫耳、或選擇自釔、鏑、 、大及铒中的稀土族元素(RE)依RE2〇3換算計較少於〇 4莫 耳的清況下’备將每單位厚度(j # m)所施力口直流電壓值設 為12&amp;5V時,絕緣電阻在2&gt;&lt;1〇8〇以下’相較於將直流電 壓值設為3. 15V時的絕緣電阻值之下,絕緣電阻降低 的緣故。 一 9711 ⑽ 5 11 200904774 再者,理由係相對於構成鈦酸鋇的鋇1〇〇莫耳之下,若 釩含有量依V2〇5換算計較多於0·3莫耳,每單位厚度 所施加直流電壓值設為3. 15V與12·…時,絕緣電 1 且均低 於1χ108Ω的緣故。 — 再者,理由係當從釔、鏑、鈥及餌中選擇丨 素(RE)的含有量依RE&quot;3換算計多於丨.5莫耳、或錳含有 量依MnO換算計多力〇.5莫耳時,介電常數均低於3_ ^、的緣故。 /再者,理由係當鎂含有量依Mg〇換算計多於i莫耳時, 靜電電容的溫度變化未滿足EIA規格的X5R特性,'且每單 位厚度(l#m)所施加直流電壓值設為3· 15v與12_ 5v時, 絕緣電阻降低變大,高溫負荷試驗中的壽命特性降低之·^ 故。 再者,本發明的介電陶莞係如上述,重點在於χ射線繞 射圖中,表不正方晶系鈦酸鋇的(〇〇4)面之繞射強度大於 G表示立方晶系鈦酸鋇的(400)面之繞射強度,特別係形成 f發明介電陶竞的結晶才目,最好幾+由表示正方晶系近乎 單相的結晶相所佔有。 一圖2(a)所示係後述實施例的表卜6中,本發明介電陶 莞的試料Nq.4之X射線繞射圖。圖2(b)所示係該表卜6 中,比較例介電陶瓷的試料Ν〇· 51之χ射線繞射圖。 、圖2(b)所示X射線繞射圖係屬於由以鈦酸鋇為主成 刀’且具有核殼結構的結晶粒子所構成介電陶兗之X射線 繞射圖’在表示鈦酸鋇正方晶系的⑽4)面與(刪)面之間 97111695 12 200904774 所出二表示的是鈦酸鋇立方晶系(4〇〇)面[(〇4〇)面、() 面重豐]的繞射強度大於表示鈦酸鋇正方晶系的⑽4)面 之繞射強度。具有此種結晶構造者,因為具有稀土族元素 (RE)未固溶至結晶粒子内部的強介電相部分(核部),以及 稀土族元素(R E )固溶於該強介電相部分之周圍的常介帝 ㈣相當於專敎獻卜3所記載習知表示核殼^ 構的介電陶瓷。 C 此種介電陶瓷係在以鈦酸鋇為主成分的粉末中,至少添 加,合稀土族元素⑽)的氧化物粉末並施行成形後,再: 用逛原燒成而形成。此情況,具有核殼結構的結晶粒子, 係稀土族元素⑽等成分擴散於屬於結晶粒子周緣部的 殼部中’另-方面’在核部並未固溶著稀土族元素⑽ 等成分,因而在結晶粒子内部,形成含有較多的氧孔洞等 缺陷狀態。所以’當施加直流電壓時,在結晶粒子内部, 氧孔洞等容易成為搬運電荷的載子,判斷會導致介電 U 的絕緣性降低。 相對於此,本發明的介電陶瓷係如圖2(a)所示,介電 陶兗的X射線繞射圖中,表示鈦酸鋇正方晶系的⑽)面 之繞射強度大於表示鈦酸鋇立方晶系的(彻)面之繞射強 即,本發明的介電陶莞係如圖2(a)所示,明確出現表 示鈦酸鋇正方晶系的⑽)面(2卜刚。附近)與(彻)面 ⑽:101。附近)的X射線繞射尖峰,在表示鈦酸鋇正方晶 系的該㈣⑷面與(4GG)面之間’所出現表示鈦酸鎖立方 97111695 13 200904774 晶系的(400)面[(〇4〇)面、(4〇〇)面重疊]繞射強度小於表 示欽&amp;銷正方晶系的(〇 0 4)面之繞射強度。 &lt;特別係當將表示鈦酸顧正方晶系的⑽4)面之繞射強度 =為Ixt、將表示鈦酸鋇立方晶系的(4〇〇)面之繞射強度 又,Ixc b ’ Ixt/Ixc比最好為κ 4〜2。若比為 .〜,正方晶系的結晶相比例增加,可更加縮小絕緣電 阻的變化率’可提高在高溫負荷試驗中的壽命特性。 :種本發明介電陶兗係鈒、錳以及稀土族元素⑽固溶 晶粒子内部’形成正方晶系大致均勻的結晶相。因 :站抑制結晶粒子内部生成氧孔洞等缺陷,搬運電荷的載 …夕’所以判斷可抑制施加直流電壓時發生介電陶变絕 緣性降低情形。 &amp; έ士由第1結晶群的結晶粒子1 a與第2結晶群的 子lb所構成結晶粒+ “勺平均粒徑,最好為 u. 15〜〇. 7# m。 二卜,稀土族元素⑽)之所以使用選擇自纪、鏑、鈥及 族元素之理由’係當固溶於欽酸鎖中之時較難 且能獲得較高絕緣性的緣故’就從提高介電陶 是w電常數的理由,最好為釔。 耳 上述、、且成中,藉由相對於構成鈦酸鋇的鋇100莫 換算二:%:依:2。5換算計0备°.3莫耳、⑽0 釔、鎘、莫耳、錳依_換算計〇〜0.5莫耳、以及從 計0.5〜中選擇1種稀土族元素⑽依漏3換算 、’便可使介電常數的溫度變化滿足ElA規 97111695 200904774 格的X7R特性’且將介電陶瓷 a 電容器的介電質層時 二θ b、適用於積層陶瓷 此情況’由第】結晶群的邑緣性與高溫負荷壽命。 結晶粒子lb所欉ώ^日0日日粒子1a與第2結晶群的 丁 iD所構成結晶粒子^ 0.Ϊ5〜〇.5&quot;m,尤以&quot;的千均粒徑,最好設為 一 儿μ U7〜〇.4#m為佳。 成it::,’最好以鈦酸鋇為主成分,且相對於構 成°亥鈦敲鋇的鋇100莫耳之下,Α士 毒 〇 05〜0 3 U ^ 、 下3有:鈒依V2〇5換算計 ” .3莫耳、錳依_換算計〇.5莫耳以下 : 管叶…&quot;擇種的稀土族元素⑽依版〇3換 ί此,介同時鎮含有量依%〇換算言十0莫耳。 二:w數的溫度變化滿足EIA規格的nR特性,同 、&amp;加直流電壓係在介電質層每單位厚度〇 # m)為 Ιϋ2·5V之間,可獲得顯示出絕緣電阻增加傾向(: I化)的尚絕緣性介電陶瓷。 上述組成中,最好相對於構成鈦酸鋇的鋇100莫耳之 下,含有:釩依V2〇5換算計0.05〜0.3莫耳、從釔、鏑、 鈥及铒中選擇i種的稀土族元素(此)依胧2〇3換算計 〇· 5〜1· 5莫耳,同時鎂依Mg〇換算計〇莫耳、錳含有量 依MnO換算計0莫耳。藉此,更可降低介電陶瓷的 損失。 此處,所謂「相對於構成鈦酸鋇的鋇1〇〇莫耳之下,鎮 含有量0莫耳、與錳含有量〇莫耳」,係指介電陶究中實 質未含有鎂與錳,例如在ICP發光分光分析的檢測極限以 下(0. 5 /z g/g以下)之量。 97111695 15 200904774 較佳的組成係相對於構成鈦酸鋇的鋇1〇〇莫耳之 含有铽依Tb4〇7換算計0.3莫耳以下的範圍内。 ,更 若相對於構成鈦酸鋇的鋇1〇〇莫耳之下,更The dielectric metamorphism of the present invention is characterized in that: barium titanate is the main component, and the composition of the barium titanate is 0. 05~0. Mohr, magnesium in terms of Mg0 conversion ^ ~ 丨 Mo Er, manganese in terms of MnO conversion 〇 ~ 〇. 5 Mo Er, and tilt, 镝, 鈥 and financial options] species of rare earth elements (RE) in terms of RE4 conversion 0.4 ~1.5 m, and X-ray diffraction pattern of dielectric ceramics, indicating that the diffraction intensity of the (10)4) plane of the barium titanate tetragonal system is greater than the diffraction intensity of the (side) surface of the barium titanate cubic system. . Thereby, the dielectric constant of the dielectric ceramic can reach more than 3 ,, and the temperature change of the dielectric constant satisfies the X5R characteristic of the EIA specification, and the DC voltage value per unit thickness (1/ζιη) is 315 yen. Dielectric ceramics with an insulation resistance of 12. 2xl G8Q or more and an insulation resistance of almost no reduction at 12.", that is, the reason is that under vanadium which constitutes barium titanate, vanadium. The Rie V2〇5 conversion is less than 0. 05 Moule, or the rare earth elements (RE) selected from 钇, 镝, 、, 大 and 铒 are less than 〇4莫耳 in terms of RE2〇3 In the case of 'the base unit (j # m), the DC voltage value of the applied voltage is set to 12 & 5V, the insulation resistance is 2&gt;&lt;1〇8〇 or less' compared to the DC voltage value is set to 3 Under the insulation resistance value at 15V, the insulation resistance is lowered. I. 9711 (10) 5 11 200904774 Furthermore, the reason is relative to the 钡1〇〇 Mo, which constitutes barium titanate, if the vanadium content depends on V2〇 5 The conversion meter is more than 0·3 moles, and the DC voltage value per unit thickness is set to 3.15V and 12·..., the insulation power is 1 and low. 1 χ 108 Ω. — Furthermore, the reason is that the content of arsenic (RE) from 钇, 镝, 鈥 and bait is more than 丨.5 mol, or manganese content in terms of RE&quot;3. When the amount of force is less than 3 _, the dielectric constant is less than 3 _ ^. / Again, the reason is that when the magnesium content is more than i mole in terms of Mg ,, the temperature change of the electrostatic capacitance is not When the X5R characteristic of the EIA standard is satisfied, and the DC voltage value per unit thickness (l#m) is set to 3·15v and 12_5v, the insulation resistance decreases, and the life characteristics in the high-temperature load test decrease. Furthermore, the dielectric ceramics of the present invention is as described above, and the focus is on the diffraction pattern of the χ ray, and the diffraction intensity of the (〇〇4) plane of the square tetragonal barium titanate is greater than G for cubic titanium. The diffraction intensity of the (400) side of the acid strontium is particularly the result of the formation of the crystal of the invention of the dielectric Tao, which is preferably occupied by a crystal phase which represents a nearly single phase of the tetragonal system. Figure 2 (a) The X-ray diffraction pattern of the sample Nq.4 of the dielectric ceramics of the present invention is shown in Table 6 of the embodiment to be described later. Fig. 2(b) shows the table. In the comparative example dielectric ceramic sample Ν〇·51 χ ray diffraction diagram. The X-ray diffraction pattern shown in Fig. 2(b) belongs to the sputum barium titanate as the main knives and has a core-shell structure. The X-ray diffraction pattern of the dielectric ceramics formed by the crystal particles is between the (10) 4) face and the (deleted) face of the barium titanate tetragonal system. 9711695 12 200904774 The second is the barium titanate cubic system. The diffraction intensity of the (4〇〇) face [(〇4〇) face, () face heavy] is greater than the diffraction intensity of the (10)4) face of the barium titanate tetragonal system. The crystal structure has such a structure that the rare earth element (RE) is not dissolved in the strong dielectric phase portion (core portion) of the inside of the crystal particle, and the rare earth element (RE) is dissolved in the ferroelectric phase portion. The surrounding Changshang Emperor (4) is equivalent to the dielectric ceramics described in the special description of the core shell structure. C. The dielectric ceramic is formed by adding at least an oxide powder of a rare earth element (10)) to a powder containing barium titanate as a main component, and then forming it by firing. In this case, the crystal particles having a core-shell structure, such as a rare earth element (10), are diffused in the shell portion belonging to the peripheral portion of the crystal particle, and the component of the rare earth element (10) is not solid-solved in the core portion. Inside the crystal particles, a defect state including a large number of oxygen pores is formed. Therefore, when a DC voltage is applied, an oxygen hole or the like is likely to be a carrier for carrying electric charges inside the crystal particles, and it is judged that the insulation of the dielectric U is lowered. On the other hand, the dielectric ceramic of the present invention is as shown in FIG. 2( a ), and the X-ray diffraction pattern of the dielectric ceramics indicates that the diffraction intensity of the (10) plane of the barium titanate tetragonal system is larger than that of titanium. The diffracted surface of the acid crystal cubic system is strong, that is, the dielectric ceramic system of the present invention is as shown in Fig. 2(a), and the (10) plane indicating the barium titanate tetragonal system is clearly present (2 Bu Gang (near) and (to) face (10): 101. X-ray diffraction peak near), between the (4) (4) plane and the (4GG) plane indicating the barium titanate tetragonal system, the (400) plane representing the titanate lock cube 97111695 13 200904774 crystal system appears [(〇4 〇) surface, (4〇〇) surface overlap] The diffraction intensity is smaller than the diffraction intensity of the (〇0 4) plane representing the Qin &amp; pin square crystal system. &lt;Specially, when the diffraction intensity of the (10) 4) plane representing the titanate crystal system is Ixt, the diffraction intensity of the (4 〇〇) plane representing the cubic crystal of barium titanate is again, Ixc b ' Ixt The ratio of /Ixc is preferably κ 4~2. If the ratio is ~., the crystal growth ratio of the tetragonal crystal system is increased, and the rate of change of the insulation resistance can be further reduced, and the life characteristics in the high temperature load test can be improved. In the present invention, the dielectric ceramics, lanthanum, manganese, and rare earth elements (10) are solid-solved inside the crystal grains to form a substantially uniform crystal phase of the tetragonal system. The station suppresses the formation of defects such as oxygen holes in the crystal particles, and conveys the charge of the charge. Therefore, it is judged that the dielectric ceramic insulating property is lowered when the DC voltage is applied. & Gentleman is composed of crystal particles 1 a of the first crystal group and sub-lb of the second crystal group; "the average particle diameter of the scoop, preferably u. 15~〇. 7# m. The reason why the family element (10)) uses the choice of self-discipline, 镝, 鈥 and ethnic elements is that it is difficult to obtain high insulation when it is dissolved in the acid lock, and it is improved from the dielectric ceramics. The reason for the electric constant is preferably 钇. The above-mentioned, and in the middle of the ear, by 钡100 with respect to the composition of barium titanate, the conversion is two:%: according to: 2. 5 conversion meter 0 preparation °. 3 mole , (10) 0 0, cadmium, moir, manganese _ 〇 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Rule 9711695 200904774 The X7R characteristic of the grid and the dielectric layer of the dielectric ceramic a capacitor when the two θ b is applied to the laminated ceramic in this case 'by the crystallization of the crystallization group and the high temperature load life. Crystallized particles lb欉ώ^日日日日日日日日日日日日日日日日日日日日日日日日日日日日日日日日日日It is better to set it as μ U7~〇.4#m. It is::, 'It is best to use barium titanate as the main component, and it is relative to the 钡100m under the composition of the titanium , Α士毒〇05~0 3 U ^, the next 3: 鈒 According to V2〇5 conversion.” 3 Mo, manganese _ conversion 〇. 5 Moel below: Tube leaves... &quot;Selected rare earth The family element (10) is changed according to the version 〇3, and the content of the town at the same time is converted to 10% in terms of %〇. Two: The temperature change of the w number satisfies the nR characteristic of the EIA specification, and the same, &amp; DC voltage is between Ιϋ2·5V per unit thickness 〇#m) of the dielectric layer, and the insulation resistance increasing tendency is obtained ( : I)) Insulating dielectric ceramics. In the above composition, it is preferable to select a rare earth group of yttrium, lanthanum, lanthanum and cerium from 0.05 to 0.3 mol in terms of vanadium in terms of V2 〇5 with respect to 钡100 构成 which constitutes barium titanate. The element (this) is calculated according to 胧2〇3 5·5~1·5 mol, and magnesium is calculated in terms of Mg〇, and the manganese content is 0 mol in terms of MnO. Thereby, the loss of the dielectric ceramic can be further reduced. Here, "the amount of 0 moles and the content of manganese in the case of 钡1〇〇mole constituting barium titanate" means that magnesium and manganese are not substantially contained in the dielectric ceramics. For example, the amount below the detection limit of ICP emission spectroscopic analysis (0.5 / zg / g or less). 97111695 15 200904774 The preferred composition is in the range of 0.3 mol or less in terms of Tb4〇7 in terms of 钡1〇〇mol comprising strontium titanate. , if it is more than the 钡1〇〇mole that constitutes barium titanate,

Tb4〇7換算計〇.3莫耳以下的範圍内,便可提高介電陶μ =電阻’當將上述介_使用為積層 電質層時,則可更加提升高溫負荷試驗中的壽命 但,若試含有量依Tb4〇7換算計較多於〇3莫耳時 、陶瓷的介電常數降低。 丨电 上述組成中,相對於構成鈦酸鋇的鋇1〇〇莫 好含有:釩依V2〇5換算計〇〗n QV 取 0 s n Q替甘?矣异冲0·1〜0.3莫耳、鎂依MgO換算計 .3 0.9莫耳、錳依Mn〇換算計〇 〇5〜〇·5莫耳、以及 =、鈥及錢中選擇i種的稀土族元素⑽依心 ;;所.9莫耳。藉此,當將對介電質層每單位厚度 (1#11〇所施加直流電屢設為3.15^12.5^寺,該等3.研 與12. 5V間的絕緣電阻盔降低产 古 &gt; *、、、〜低清形,可獲得高絕緣性、且 “憂異的高可靠度介電陶竞,同時可使介電常 數達4000以上,且介電損失未滿13.5%。 此情況,構成該介電陶㈣晶粒子之平均粒徑’最好 u· dd〜U. 57/z m。 再者’上述組成中,相對於構成鈦酸鋇的鋇100莫耳之 二r :飢依v 2 0 5換算計0.1〜0.3莫耳、鎮依咖 換^十0.3〜0·9莫耳、鐘依_換算言十0·05〜0.5莫耳、 以及從紀、鏑、鈥及铒中 一、 RE2〇3換算計〇 4〜〇 9茬耳、鬥士 、族疋素⑽依 ..9莫耳,同知更含有轼依Tb4〇7換算計 97111695 16 200904774 0.3莫+耳以下的範圍内,便可更加提高介電陶瓷的絕緣電 阻,,藉此便可更加提升高溫負荷壽命,可將介電陶瓷的= 1常數提高達5GGG以上。此外,藉由設為此種組成,同 時將結晶粒子的平均粒徑設為0.5卜0.57#m範圍内,便 可將介電常數提高達6010以上。 *再者,本發明的介電陶瓷,相對於構成鈦酸鋇的鋇1〇〇 莫耳之:,可更含有镱依Υ^〇3換算計0.6莫耳以下的範 〇圍内。若設為此種組成,即使燒成溫度出現約5〇艽的變 仍可抑制介電常數的變化。所以,即使使用容易發生 溫度變動的大型燒成爐,仍可降低各個介電陶瓷的介電質 特f (介電常數、介電損失等)變動,可提升良率。另外、, 為能獲得利用镱的含有而所產生的充分效果,最好 〇. 3莫耳以上。 本發明的介電陶瓷係如上述,以鈦酸鋇為主成分,且在 其中將依上述比例含有鈒、鎮、猛及特定 (二)。此外’本發明的介電陶£在能維持所需介電特性之 =圍内’尚可在介電陶究中依2質量%以下的比例,含有 為::燒結性之輔助劑的玻璃成分、與其他的添加成分。 姓曰群的Ϊ構成第1結晶群的結晶粒+ la、及構成第2 晶粒子lb所構成結晶粒子1的平均粒徑,係 的截面施行截面研磨的研磨面,將利用穿透 工金’、’、+鏡所顯不出的影像讀取於電腦中,並在該晝面 旦出對角、線,對在該對角線上存 轩旦彡伤忐抑 1丨丁 p W、、,口日日拉子輪廓施 心 並求取各粒子面積,計算出經取代為具有相 97111695 17 200904774 圓時的直徑,且求取所計算得結晶 的平均值。 相=晶粒子中的㈣度,針對在介電㈣截面截面經 ^丁研磨過的研磨面令所存在的約3〇個結晶粒子,使用 器的穿透型電子顯微鏡施行元素分析。此 二f:子束的斑點大小設為5,而所分析的地方係從 ^曰^子的晶界附近起朝中心所拉的直線上,依大致等間 = ::,而分析值便在晶界附近與中央部之間取W 點的分析值之平均值,蔣^ 字攸、、,口日日粒子的各測定點所檢測出 的 Ba、T1、Ca、V、Mg、豨 + *一本 、 稀土私兀素(RE)及Μη總量設為 l〇(U ’並求取此時的Ca濃度。 所選擇的結晶粒子係從輪廊利用影像處理求取各粒子 計算經取代為具相同面積圓時的直徑,且將所求 粒子直徑隸屬平均結晶粒徑侧範圍内者視為結 日曰粒子。 =外’所謂「結晶粒子中央部」係指從該結晶粒子内接 二厂=5亥内接圓半徑1/3長度為半徑所晝圓的範圍; ’所謂「結晶粒子的晶界附近」係指距該結晶粒子晶 ^ η:内側的區域^而,結晶粒子的内接圓係將利用穿透 鏡所顯示出的影像讀取於電腦中,並在該書面 對…曰粒子描繪内接圓’而決m粒子的中央部。 的介電陶究係如上述,結晶粒子係具有: 成弟1、、、„晶群的結晶粒子la、與構成第2結晶群的姓 曰曰粒子lb。比例係當將構成第i結晶群的結晶粒子1&amp;面 97111695 18 200904774 積設為Cl,將構成第2結晶群的結晶粒子lb面積設為C2 時 ’ C2/(C1+C2)最好為 0.8〜0.99。 構成第2結晶群的結晶粒子lb,因為鈣的固溶,因而 相較於構成第1結晶群的結晶粒子la之下,顯示出較高 的居禮溫度。所以,提高構成第2結晶群的結晶粒子化 比例’藉由設為上述範圍内’便可提升高溫下的介電常 數同時具有奋易使介電常數的溫度變化可滿足eia規格 ,的X5R特性之優點。 成電㈣中’構成第1結晶群的結晶粒子1a與構 晶群的結晶粒子lb之面積比例,係使用求取上 述平均粒徑時所使用面積數據進行求取計算。 先其=針對製造本發明介電陶究的方二行說明。首 稱「BT= 末料備:純度99%以上的鈦酸鋇粉末(以下 「BC/於I末;^、以及欽酸鋇已固溶著舞的粉末(以下稱 以及從;t」上且添加成分係準備I粉末與_粉末, 擇!種蘇+ ,203粉末、H〇203粉末及Er203粉末中選 ^ 族70素的氧化物粉末與MnC〇3粉末。另#,^ 介電陶瓷中含右筮9接丄# _ 士 ^力外,當 的氧化物㈣之情況,稀土族元素 ::取好使用Tb4〇7粉末。此外, 弟3稀土族元素的镱之情況 m有 用粉末。 稀私70素的虱化物最好使 分係以將部分A site取代為以的鈦酸顧為主成 刀之固溶體,依“ 頭為主成 量最好設為MCa取代 97111695 0.2右Ca取代量在該範圍内,藉由 19 200904774 與第1結晶粒子1 a的共存槿 Ρ μ&amp;曰,, 、仔構绝,便可形成經抑制晶粒成 長的、,.口曰曰組織。藉此,當使用為電容器的情況,便可在使 用溫度範圍中獲得優異的溫度特性。另外,第2結晶粒子 lb中所含的Ca係依分散於第2結晶粒子ib中的狀㈣ 溶。 再:’ BT…BCT粉末的平均粒捏最好為 .广5㈣。若BT粉末與BCT粉末的平均粒徑達 ,以上’因為第1結晶粒子1a與第2結晶粒子1b 成為U性,因而具有提升介電常數的優點。另一方 粉末與BCT粉末的平均粒徑在〇15&quot;以下, 便可使稀土族元素⑽及鐘等添加劑,輕易地固溶至第i 結晶粒子1 a與第? 4士 s私Ί k ^ 、弟Z、,,口日日拉子1b的内部,且如後述,且有 ㈣&quot;T粉末與BCT粉末,分別晶繼 結晶群的結晶…、與構成第2結晶群的 Ϊ = 成長比率的優點。βΤ粉末與航粉末 ==劑的從抓粉末、Dy2〇3粉末、Η〇2〇3粉末及_ ^末、擇1種稀土族元素⑽的氧化物粉末、制7 二平2 Q末、V2〇5粉末、Mg0粉末、以及MnC〇3粉末, i相等好使用與灯粉末及町粉末等的介電質粉 1著,相對於構成BT粉末與βα粉末 :二末莫耳,。粉末W莫耳、Μ= .5莫耳、從Υ2〇3粉末、Dy2〇3粉末、Η〇2〇3粉末及 97111695 20 200904774 βι*2〇3粉末_選摆的接 。.…莫耳二===R£)依⑽換算計 稀土族元素的Tb4〇7粉末。 依情況,添加第2 的Yb2〇3粉末0.6莫耳以 弟3稀土族元素 但,若物量依 料中的分散性降低,因而較難獲得均二=為對裝 最好設定在上述組成範圍内。其次,將㈣=竞’所以 脫脂後,便在還原環境巾施行燒成。U 7體施行 另外’當製造本發明介電陶究之際,若在能㈣ 人 電躲的範圍内’亦可添加燒結輔助劑的破璃粉末::二 加里係當將以主要原料粉末的βτ粉末及BCT 且: 設為_ f量份時,最好添加0.5〜2質量份/ σ汁量 當燒成溫度係使用玻璃粉末等燒結輔助劑的情況 添加劑對ΒΤ粉末與Βα粉末的固溶、以 = 晶:成長的理由,最好設為跡贼。當第::: 兀素的镱,相對於構成鈦酸鋇的鋇1〇〇莫耳之 、 換算計含有0.6莫耳以下的範圍内時,便可在HU2 3 C範圍内施行燒成。另一方面,當未使用玻璃粉末等⑼ 辅助劑’而利用熱壓法等加壓燒成施行的情況,便可:: 未滿1050。(:溫度下的燒結。 丁 本發明中,為能獲得該介電陶瓷’藉由使用微粒的βτ 粉末與BCT粉末’並在其中添加既定量的上述添加劑,且 依上述/JHL度進行燒成,便將含有各種添加劑的Βτ粉末與 BCT粉末之平均粒徑,燒成為在燒成前後呈2倍以上的= 97111695 21 200904774 態。藉由將經燒成後的結晶粒子〗之平均粒徑,燒成為含 有釩、其他添加劑的Βτ粉末與BCT粉末之平均粒徑2倍 以上,結晶粒子1便至少含有釩、稀土族元素(RE)、及第 2 ^ 土敎兀素,並依情況含有鎂與錳,且固溶於結晶粒子 \整體中。結果’可抑制結晶粒子丨内部發生氧孔洞等缺 陷,判斷會形成搬運電荷的載子呈較少狀態。 ^者’本發財,經燒成後,再度於弱還原環境中施行 :、处理。遺項熱處理係為在還原環境中的燒成時,將已還 原的介電陶瓷施行再氧化,並在燒成時In the range below Tm4〇7, the dielectric ceramic μ = resistance can be increased in the range below 3 m. When the above-mentioned dielectric layer is used as the laminated electric layer, the life in the high-temperature load test can be further improved. When the amount of the test is more than 〇3 mol in terms of Tb4〇7, the dielectric constant of the ceramic is lowered.上述Electricity In the above composition, 钡1〇〇 with respect to the composition of barium titanate contains: vanadium in terms of V2〇5 conversion nn QV takes 0 s n Q for the Gan?矣 冲 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0.9 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 镁 0.9 0.9 0.9 镁 0.9 0.9 Family elements (10) according to the heart;; Therefore, when the dielectric layer is applied to the dielectric layer per unit thickness (1#11〇, the DC power is repeatedly set to 3.15^12.5^, and the insulation resistance helmet between the 3. Research and 12.5V is lowered.) * , , , ~ low clear shape, can obtain high insulation, and "sorrowful high reliability dielectric Tao Jing, at the same time can make the dielectric constant of more than 4000, and the dielectric loss is less than 13.5%. In this case, the composition The average particle size of the dielectric ceramic (four) crystal grains is preferably u· dd~U. 57/zm. In addition, in the above composition, the 钡100 molar two of the composition of the barium titanate r: hungry v 2 0 5 conversion meter 0.1~0.3 moer, town espresso change ^100.3~0·9 Mo Er, Zhong Yi _ conversion words ten 0. 05~0.5 Mo Er, and the discipline, 镝, 鈥 and 铒 one, RE2〇3 conversion meter 4~〇9茬 ear, fighter, family 疋素(10)依..9莫耳,同知有轼轼Tb4〇7 conversion meter 97111695 16 200904774 0.3 Mo + ear below the range, The insulation resistance of the dielectric ceramic can be further improved, thereby further increasing the high-temperature load life, and the constant of the dielectric ceramic can be increased by more than 5 GGG. Further, by setting this composition, When the average particle diameter of the crystal particles is in the range of 0.5b to 0.57#m, the dielectric constant can be increased to 6010 or more. * Further, the dielectric ceramic of the present invention is relative to the 钡1〇〇 constituting barium titanate. Moer's: It can be further included in the range of 0.6 m or less in terms of conversion according to Υ^〇3. If this composition is used, the dielectric constant can be suppressed even if the firing temperature changes by about 5 〇艽. Therefore, even if a large-scale baking furnace which is prone to temperature fluctuation is used, variations in the dielectric properties (dielectric constant, dielectric loss, etc.) of each dielectric ceramic can be reduced, and the yield can be improved. In order to obtain a sufficient effect by utilizing the content of cerium, it is preferable to use 3. 3 摩尔 or more. The dielectric ceramic of the present invention is mainly composed of barium titanate as described above, and contains yttrium in the above ratio. (2) In addition, the dielectric ceramics of the present invention can be maintained at a ratio of 2% by mass or less in dielectric ceramics. :: The glass component of the sinter adjuvant and other added components. The Ϊ constitutes the crystal grain + la of the first crystal group, and the average particle diameter of the crystal particles 1 constituting the second crystal grain lb, and the polished surface of the section is subjected to cross-section polishing, and the use of the penetration gold ', ', + The image that is not visible in the mirror is read in the computer, and the diagonal and the line are on the surface of the mirror. On the diagonal line, there is a sinusoidal injury, and the sputum is smashed. The puller profile is centered and the area of each particle is determined, and the diameter when substituted with a phase of 9711695 17 200904774 is calculated, and the average value of the calculated crystal is obtained. Phase = (four) degrees in the crystal grains, elemental analysis was carried out by using a penetrating electron microscope of about 3 crystal particles present in the surface of the dielectric (four) cross section. The size of the spot of the two f: beamlets is set to 5, and the analyzed area is on the straight line drawn from the vicinity of the grain boundary of the ^^^, toward the center, according to the roughly equal interval = ::, and the analysis value is The average value of the analysis value of the W point between the vicinity of the grain boundary and the central portion, Ba, T1, Ca, V, Mg, 豨+ * detected by each measurement point of the sho One, the total amount of rare earth private sputum (RE) and Μη is set to l〇(U ' and the Ca concentration at this time is obtained. The selected crystal particles are calculated by image processing from the veranda and each particle is replaced by The diameter of the circle with the same area, and the particle diameter of the particle size is within the range of the average crystal grain size side. It is regarded as the knotted day particle. The outer part is called the "central part of the crystal particle". The radius of 1/3 of the radius of 1/3 is the range of the radius of the circle; 'the vicinity of the grain boundary of the crystal grain' means the area inside the crystal grain η: the inner side of the crystal particle The circle will be read into the computer using the image displayed by the lens, and the inscribed circle will be drawn in the written object. The dielectric ceramics of the central portion of the m-particles are as described above, and the crystal particles have the following: 1, the crystal particles of the crystal group 1, and the crystal particles lb of the second crystal group. When the crystal particles 1 &amp; face 97111695 18 200904774 constituting the i-th crystal group are set to Cl, and the area of the crystal particles lb constituting the second crystal group is C2, 'C2/(C1+C2) is preferably 0.8~. 0.99. The crystal particles lb constituting the second crystal group exhibit a high Curie temperature as compared with the crystal particles la constituting the first crystal group because of the solid solution of calcium. Therefore, the second crystal is formed. The crystallized particle ratio of the group 'by setting it within the above range' can increase the dielectric constant at high temperatures while having the advantage that the temperature change of the dielectric constant can satisfy the eia specification and the X5R characteristic. The area ratio of the crystal particles 1a constituting the first crystal group to the crystal particles lb of the crystal group is calculated by using the area data obtained when the average particle diameter is obtained. First, it is for the manufacture of the dielectric ceramics of the present invention. The second line of the study is explained. The first name is "BT= Preparation: Barium titanate powder with a purity of 99% or more (the following "BC / I at the end; ^, and 钦 钡 钡 固 固 固 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( And _ powder, choose! species Su +, 203 powder, H 〇 203 powder and Er203 powder, select 70 kinds of oxide powder and MnC 〇 3 powder. Another #, ^ dielectric ceramic with right 筮 9 丄# _ 士 ^力,, in the case of oxides (IV), rare earth elements:: Use Tb4〇7 powder. In addition, the case of 33 rare earth elements is useful powder. It is preferable to make the fractional system to replace the partial A site with the titanic acid as the solid solution of the main knives. According to the "head-based amount, it is preferable to set MCa instead of 97111695 0.2. The right Ca substitution amount is within the range. By the coexistence of 19 200904774 with the first crystal particles 1 a 槿Ρ μ &amp; ,, , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Thereby, when used as a capacitor, excellent temperature characteristics can be obtained in the temperature range of use. Further, the Ca contained in the second crystal particles lb is dissolved in the form (4) dispersed in the second crystal particles ib. Again: the average granule pinch of the BT...BCT powder is preferably .5 (four). When the average particle diameter of the BT powder and the BCT powder is as large as above, the first crystal particles 1a and the second crystal particles 1b have U properties, and thus have an advantage of increasing the dielectric constant. When the average particle diameter of the other powder and the BCT powder is 〇15&quot;, the additives such as the rare earth element (10) and the clock can be easily dissolved to the i-th crystal particle 1 a and the first. 4 s private Ί k ^, brother Z,,, the mouth of the day pull 1b inside, and as will be described later, and there are (four) &quot;T powder and BCT powder, respectively crystallized crystal group of crystal ..., and constitute the second crystal Group Ϊ = the advantage of the growth ratio. Τ Τ powder and aerospace powder == agent from the scratch powder, Dy2 〇 3 powder, Η〇 2 〇 3 powder and _ ^ end, select a rare earth element (10) oxide powder, make 7 two flat 2 Q end, V2 〇5 powder, Mg0 powder, and MnC〇3 powder, i is preferably used in combination with a dielectric powder such as a lamp powder and a powder, and a BT powder and a βα powder: a second molar. Powder W Mo, Μ = .5 mol, from Υ2〇3 powder, Dy2〇3 powder, Η〇2〇3 powder and 97111695 20 200904774 βι*2〇3 powder _ selected pendulum. .... Mo Er ====R£) According to the (10) conversion, the rare earth element Tb4〇7 powder. Depending on the case, the second Yb2〇3 powder is added to 0.6 mol of the 3rd rare earth element. However, if the dispersibility in the amount of the material is lowered, it is difficult to obtain the uniformity = it is preferably set within the above composition range. . Secondly, after (4) = competition, after degreasing, it is fired in a reducing environmental towel. U 7 body is applied additionally. 'When manufacturing the dielectric ceramics of the present invention, if it can be in the range of (4) human electric hiding, it is also possible to add a sintering aid to the glass breaking powder:: The two-story is to be the main raw material powder. Βτ powder and BCT and: When it is set to _f, it is preferable to add 0.5 to 2 parts by mass / σ juice amount. When the firing temperature is a sintering aid such as glass powder, the solid solution of the bismuth powder and Βα powder is added. With = crystal: the reason for growth, it is best to set the thief. When the :::: 兀 镱 镱 镱 镱 镱 镱 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 On the other hand, when the (9) auxiliary agent is not used, such as glass powder or the like, and the pressure baking is performed by a hot press method or the like, it is possible to:: less than 1050. (Sintering at a temperature. In the present invention, in order to obtain the dielectric ceramic 'by using a fine particle of βτ powder and BCT powder' and adding a predetermined amount of the above-mentioned additive, and firing according to the above /JHL degree Then, the average particle diameter of the barium powder containing the various additives and the BCT powder is burned to be more than twice as large as before and after the firing = 97111695 21 200904774. By the average particle diameter of the calcined crystal particles, The average particle diameter of the calcined powder containing vanadium and other additives is twice or more, and the crystal particles 1 contain at least vanadium, a rare earth element (RE), and a second earthworm, and optionally contain magnesium. It is dissolved in the crystal particles and the whole of manganese. The result is that it can suppress the occurrence of defects such as oxygen pores in the crystal particles, and it is judged that the carrier that transports the charge is in a small state. ^The person's wealth, after firing And again in the weak reduction environment: treatment. The heat treatment of the last item is to re-oxidize the reduced dielectric ceramic during firing in a reducing environment, and when firing

的絕緣電阻回德而每#从疮„ T 處溫度係就從能在更加抑制 曰…/ a、及構成第2結晶群的結 晶粒成長情況下,提高再氧化量的理由,最 έ士::二900〜上10(rc。依此的話’在構成第1結晶群的 —拉子la、及構成第2結晶群的結晶粒子^中,可带 成利用向絕緣性結晶粒子所形成的介電㈣。 &quot; =3所示係本發明積層陶究電容器例的 在電容器本體1G二端部設置外 口 P電極4。此外,雷交哭士 7 3-^^ 态本體10係由介電質層5與内部 電極層7呈交錯積層的積屛 1 岸5将ώ卜、+、士 &amp; ㊆層體10A所構成。所以’介電質 將介電質所形成。另外,圖3中, 作,本穑屏陷。卩電極層7的積層狀態單純化圖示, 本發明積層陶瓷雷交哭人^ 7’係形成多達數百層的積層體質層5與内部電極層 根據此種本發明積層陶竞電容器,藉由介電質層5係使 97111695 22 200904774 電陶究,便可獲得高介電率、且介電常數的溫度 規格的!_與咖特性,即使將介電質 曰潯θ化仍可確保尚絕緣性,可獲得g γ g 4 ^ +从 壽命特性優異之積層陶兗電容器。負何㈣中的 在此,介電質層5厚度最好設定在&amp; 2.5/^以下為佳),有助於積層陶时 、兀 化’且為使本發明的靜電電容變動與電:c電容 、化,介電質Μ 5的厚度更以、拿與電谷温度特性E安定 内部電極層7係就即使 二二二上為佳。 觀點,最好為諸如鋪J)使制製造成本的 能與本發明介電f # /蜀,特別係就達 層5同~燒成的觀點,最好 外部電極4係將例如Cu、或^ 好為鎳(以)。 烘烤而形成。 一 Nl的合金膠糊施行 其次’針對積層陶宪電容器的製 =素二料粉末中添加專用有機調漆料上 料’接著,將陶究漿料使 討而5周製传陶莞漿 等片材成形法而形成陶片j主4、狹縫式塗佈法 係就為使介電質肩5古:^ Μ况,陶究胚片的厚度 觀點,最好設為卜4:谷化的缚層化、維持高絕緣性的 ** μ m 〇 在所獲得陶瓷胚# 圖案。成為内部電極Λ主面上印刷形成矩形狀内部電極 〜,該等的合金粉;案的導體膠糊之材料,最好為Ni、 數,並在Γ已形成内部電極圖案的陶庇片舌 並在上下複數片未庇片重疊所需片 97_ 成㈣電極圖案的陶究胚片,依 23 200904774 上下層為相同片數的方式進 此情況,片材積層體中的内部電=形成片材積層體。 錯開半個圖案。 圖案係朝長邊方向逐次 圖Ϊ::二材積層體切斷呈格子狀,並依露出内部電枉 方式形成電容器本體成形體。藉由此= 亟 化成在經切斷後的電交 m g工 内部電極圖案的狀態。°成形體端面,交錯露出 本體成形體施行脫脂後,藉 陶是相同的燒成條件與弱還原 仃興上逑)1電 容器本體。 、 下的熱處理,便製得電 接著,在該電容器本體的相 糊施行塗佈,經扭烤便而孩,將外部電極膠 雷極4沾主成部電極4。此外,在該外部 以下二能提高安裝性,亦可形成電鐘膜。 容器進行:::::針對本發明的介電陶一究電 [實施例] [實施例1] 二:係準備:βτ粉末、βα粉末(組成係 P f X=G· G5)、_ 粉末、粉末、Dy2〇3 ♦分末、 =末、=粉末、— =:二=BT粉末與町粉末依等莫耳進行混 j再將添加劑的各種粉末依表卜2及3所示比例進 s亥等原料粉末係使用純度99·⑽。另外,訂粉 與BCT粉末的平均粒徑係就試料No. 1-卜49、52、53刀及 97111695 24 200904774 56 90使用〇. 1//m ’就試料Ν〇. &quot;ο與5ι使用平均粒徑 0.25㈣,就試料N〇1_54、55使用平均粒徑〇12“。 Y2〇3#^ ' Dy2〇3t^ ' H〇2〇3#^ ' ' n叔末、MnC〇3粉末及V2〇5粉末係使用平均粒徑 1 US粉末與BCT粉末的WTl比係設為^ 、,辅助劑係使用SiG2=55、Ba㈣、⑽七、^㈣ 耳%)組成的玻璃粉末。玻璃 、 DPT 玻璃叔末的添加置係相對於βΤ粉 ^末與BCT粉末的合計量1〇〇質量份,設定為以 =次’將該等原料粉末㈣直# 5_氧化錄磨球,並 劑的甲笨與醇之混合溶劑而施行濕式混合。 '' :經濕式混合的粉末投入於聚乙稀縮 醇的混合溶劑中,因掙认杜m J m T本及 式混合,便調製得陶㈣祖# 5mm氧化錯磨球施行濕 2.5㈣陶究胚片。…再利用刮聚刀法製成厚度 '部胚片上面複數形成以Ni為主成分的矩形狀内 平均粒徑0 3&quot; Λ 導11膠糊’係相對於 丁 ]位仫0.3㈣的Ni粉末1〇〇質 料的陶竟胚片令所使㈣粉末依Ni粉末;^加共曰同材 :經施行内部電極圖案印刷的陶兗質讀。 在其上下面分別并爲土 償層360片,並 層“電各 %鐘:條::::括積層,然後切斷成既定^ 在…’依_,施…時燒r: 97111695 25 200904774 2中moon:施行4小時再氧化處理,便製得電 本體。該電容器本體的大小係 益 質層厚度係2,内部電極層一岸:右48Χ〇.48_3’介電 另外,所謂「有效面積」;=\有效面積係0·3^ 端面露出之方式,所形成」内容器本體不同方向 其次,將經燒成的電容器二極層=間的重4面積。 宏5|夫躺... 化仃滚笱研磨後,再於電 為本體二^卩㈣含有Cu粉末與 ’亚依_施行供烤,便形成 := ::滾:;:在該外部電極表面上依序施行 電鍍,便製得積層陶瓷電容器。 又^、 其次’針對該等積層陶瓷電宏 係均設定為試料數10個,取評估。評估 溫度肌、頻率lGkH7 ^取千均值。介電常數係依 行靜電電容的測定:並從介==:的測定條件施 面積進行求取。此外部電極層有效 -55〜125°C的範圍_定#當+ $ μ度特性係依溫度 咖㈣盘=切電電容。絕緣電阻係依直流電愿 中,依常用。條件施行評估。表5、6及9 之卩Ι^Λ Ρ數表的絕緣電阻,係由在尾數部與抨备卹 之間插入E的指數符號表示。 丨射日數部 高溫負荷試驗係在溫度丨 酬⑽/㈣)的條# +依施加電塵 定為各試料20個。 …皿負何式驗中的試料數係設 晶::::二群的結晶粒子、及構成第2結晶群的“ 97111695 — 成結晶粒子的平均粒徑’係針對介電陶究 26 200904774 磨的研磨面’將利用穿透式電子顯微鏡所顯 出的衫像項取於電腦中’並在該晝面上畫出對角線,對 在》亥對角線上所存在的結晶粒子輪靡施行影像處理,並求 =各粒子面積,計算出經取代為具有相同面積之圓時的直 位且求取所計异得結晶粒子約50個的平均值。此外, 求取結晶粒子平均粒徑相對介電質粉末平均粒 晶粒成長率。 术汁估 相關結晶粒子中的鈣濃度,針對在積層陶瓷電容器積層 方向的截面經施行研磨過的介電f層研磨面中所存在約 30個結晶粒子,使用附設元素分析機器的穿透型電子顯 微鏡施行元素分析。此時,將電子束的斑點大小設為_, 而所分析的地方係從結晶粒子的晶界附近起朝中心所拉 的直線上,依大致等間隔位置設點。分析值係在晶界附近 與中央部之間取4〜5點的分析值之平均值,將從結晶粒子 的各敎點所檢測出的Ba、Ti、Ga、v、Mg、稀土族元素 ⑽)及Μη總量設為譲,並求取此時的以濃度。此情 況,所選擇的結晶粒子將從輪靡利用影像處理求取各粒子 的面積,並計算出經取代為具有相同面積之圓時的直徑, 且將依此所求得直徑的結晶粒子直徑,視為隸屬平均結晶 粒徑±60%範圍内的結晶粒子。 在該項測定中’結晶粒子的中央部係設定為距該結晶粒 子内接圓中心的半徑1/3長度範圍内,另一方面,結晶粒 子的晶界附近係設定為距該結晶粒子晶界—内側的區 域。另外’結晶粒子的内接圓係將利用穿透式電子顯微鏡 97111695 27 200904774 了:::出的影像’在電腦晝面上描繪内接圓,再從該晝面 令衫像決定結晶粒子的中央部。 j成介電陶究之將構成第1結晶群的結晶粒子與將構 2結晶群的結晶粒子之面積比例[C2/(CHC2),其 構,第1結晶群的結晶粒子i a之面積係依u表示, /構成第2結晶群的結晶粒子! b之面積係依^表示], 系從針對上述約5〇個求取結晶粒子丨&amp;、丨匕平均粒徑的面 積數據進行计算。表丨〜3所示試料中,試料N〇. 1〜心、Μ ' 及 56 90 的 C2/(C1+C2)係 〇. 9。相關試料 Ν〇. 5〇、51 及 54 的 C2/(C1+C2)係 〇. 75。相關試料 N〇. 55 的 C2/(C1+C2) 係 0· 8。 再者,表示正方晶系鈦酸鋇的(〇〇4)面之繞射強度、與 表不立方晶系鈦酸鋇的(4〇〇)面之繞射強度的比值測定, 係使用具有Cuk α管球的X射線繞射裝置,依角度2 0 102°範圍施行測定,並測定尖峰強度的比而進行求 取。 再者’所獲得燒結體的試料組成分析,係利用 ICPUnductively coupied Piasma)分析或原子吸光分析 而實施。此情況下,將使所獲得介電陶瓷、與硼酸及碳酸 鈉進行混合並經溶融的混合物,溶解於鹽酸中,首先利用 原子吸光分析施行介電陶瓷中所含元素的定性分析,接 著,針對經特疋的各元素,以標準液經稀釋過者當作標準 試料,並施行ICP發光分光分析而定量化。此外,各元素 的價數係採週期表所示價數並求取氧量。 97111695 28 200904774 調配組成與燒成溫度係如表丨〜3所一 依氧化物換算計的組成係 :,燒結體中各元素 7〜9所示。其中,矣/ p表6所不,特性結果係如表 各成分在檢測極限以下(中’介電陶究的iCP分析中,當 莫耳。 C0.5#g/g以下)的情況,便視為0 表3所不係起始原料 细 所示係介電陶莞的組成,表7 ^ 成恤度,表4〜6 .繞射強度比、紝”立早心 斤不係)丨電陶瓷的X射線 介電損失、絕:=電陶竟的介電常數、 驗中的壽命特性。书數的溫度特性、高溫負荷試 97111695 29 200904774 [表l ] 試料No. MgO MnC〇3 V2〇5 稀土族元素 第2稀土族元素 (Tb4〇7) 燒成溫度 莫耳 莫耳 莫耳 種類 莫耳 莫耳 °C 1-1 0.15 0.5 0.1 Υ2〇3 1 0 1130 1-2 0.1 0.5 0.1 Υ2〇3 1 0 1130 1-3 0. 02 0.5 0.1 Υ2〇3 1 0 1130 1- 4 0 0.5 0.1 Υ2〇3 1 0 1130 1-5 0.05 0.2 0.1 Υ2〇3 1 0 1130 1- 6 0.02 0.2 0.1 Υ2〇3 1 0 1130 1- 7 0 0.2 0.1 Υ2〇3 1 0 1130 1-8 0. 05 0 0.1 Υ2〇3 1 0 1130 1-9 0. 02 0 0.1 Υ2〇3 1 0 1130 1-10 0 0 0.1 Υ2〇3 1 0 1130 * 1- 11 0 0.5 0 Υ2〇3 1 0 1130 1- 12 0 0.5 0.05 Υ2〇3 1 0 1130 1- 13 0 0.5 0.12 Υ2〇3 1 0 1130 1- 14 0 0.5 0.15 Υ2〇3 1 0 1130 1-15 0 0.5 0.2 Υ2〇3 1 0 1130 1-16 0 0.5 0.3 Υ2〇3 1 0 1130 *1-17 0 0.5 0.4 Υ2〇3 1 0 1130 1- 18 0.15 0.5 0.1 Υ2〇3 1 0.2 1130 1-19 0.1 0.5 0.1 Υ2〇3 1 0.2 1130 1- 20 0.02 0.5 0.1 Υ2〇3 1 0.2 1130 1- 21 0 0.5 0.1 Υ2〇3 1 0.2 1130 1- 22 0.05 0.2 0.1 Υ2〇3 1 0.2 1130 1- 23 0.02 0.2 0.1 Υ2〇3 1 0.2 1130 1- 24 0 0.2 0.1 Υ2〇3 1 0.2 1130 1- 25 0.05 0.1 0.1 Υ2〇3 1 0.2 1130 1- 26 0. 02 0.1 0.1 Υ2〇3 1 0.2 1130 1-27 0 0.1 0.1 Υ2〇3 1 0.2 1130 1- 28 0.05 0 0.1 Υ2〇3 1 0.2 1130 記號*係指逾越本發明範圍外的試料。 97111695 30 200904774 [表2] 試料No. MgO MnC〇3 V2〇5 稀土族元素 第2稀土族元素 (Tb4〇7) 燒成溫度 莫耳 莫耳 莫耳 種類 莫耳 莫耳 °C 1- 29 0. 02 0 0.1 Υ2〇3 1 0.2 1130 1- 30 0 0 0.1 Υ2〇3 1 0.2 1130 1- 31 0 0 0.1 Υ2〇3 1 0.05 1130 1- 32 0 0 0.1 Υ2〇3 1 0.1 1130 1- 33 0 0 0.1 Υ2〇3 1 0.3 1130 1- 34 0 0 0.1 Υ2〇3 1 0.4 1130 氺 1- 35 0 0.5 0 Υ2〇3 1 0.2 1130 1- 36 0 0.5 0.05 Υ2〇3 1 0.2 1130 1- 37 0 0.5 0.12 Υ2〇3 1 0.2 1130 1- 38 0 0.5 0.15 Υ2〇3 1 0.2 1130 1- 39 0 0.5 0.2 Υ2〇3 1 0.2 1130 1- 40 0 0.5 0.3 Υ2〇3 1 0.2 1130 氺 1- 41 0 0.5 0.4 Υ2〇3 1 0.2 1130 1- 42 0 0 0.1 Dy2〇3 1 0.2 1130 1- 43 0 0 0.1 Η〇2〇3 1 0.2 1130 1- 44 0 0 0.1 ΕΓ2〇3 1 0.2 1130 氺 1- 45 0 0 0.1 Υ2〇3 0 0.2 1130 1- 46 0 0 0.1 Υ2〇3 0.5 0.2 1130 1- 47 0 0 0.1 Υ2〇3 1.5 0.2 1130 氺 1- 48 0 0 0.1 Υ2〇3 2 0.2 1130 氺 1- 49 0 0.7 0.1 Υ2〇3 1 0.2 1130 t 1- 50 0 0 0.1 Υ2〇3 1 0 1130 氺 1- 51 0.15 0.5 0 Υ2〇3 1 0 1130 1- 52 0 0 0.1 Υ2〇3 1 0.2 1200 1- 53 0 0 0.1 Υ2〇3 1 0.2 1200 1- 54 0 0 0.1 Υ2〇3 1 0.2 1050 1- 55 0 0 0.1 Υ2〇3 1 0.2 1100 記號*係指逾越本發明範圍外的試料。 97111695 31 200904774 [表3]The insulation resistance is returned to the German and the temperature from the sore „T is the reason why the amount of reoxidation can be increased under the condition that the growth of the crystal grains of the second crystal group is further suppressed. In the case of the first crystal group, the pull crystal la and the crystal crystal particles constituting the second crystal group can be brought into the form of the insulating crystal particles. Electric (4). &quot; =3 shows the outer layer P electrode 4 at the two end portions of the capacitor body 1G in the example of the laminated ceramic capacitor of the present invention. In addition, the Raytheon 7 3-^^ body 10 is made of dielectric The product layer 5 and the internal electrode layer 7 are stacked in a stack. The bank 5 is composed of a slab, a +, a squirrel, and a seven-layer body 10A. Therefore, the dielectric is formed by a dielectric. In addition, in Fig. 3作 穑 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 卩 本 本 本 本 本 本 本 本 本 本 本The laminated ceramics capacitor of the present invention can obtain high dielectric constant by using the dielectric layer 5 system to make 9711695 22 200904774 electric ceramics. And the temperature characteristic of the dielectric constant, the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Here, in (4), it is preferable that the thickness of the dielectric layer 5 is set to be less than &lt; 2.5/^, which contributes to the lamination of the ceramics, and the change of the electrostatic capacitance of the present invention and electricity: Capacitance, crystallization, dielectric Μ 5 thickness, take and electric valley temperature characteristics E stability of the internal electrode layer 7 is even better on the 22nd. Viewpoint, preferably such as paving J) manufacturing cost It is preferable to use the dielectric f # /蜀 of the present invention, in particular, from the viewpoint of the formation of the layer 5 to the firing, it is preferable that the external electrode 4 is formed, for example, of Cu or yttrium. The alloy paste is applied secondly to the system of the laminated ceramics capacitors. The special organic paint is added to the powder. Then, the ceramic slurry is used to form a sheet of 5-week-made ceramic powder. The law forms the pottery j main 4, the slit coating method is to make the dielectric shoulder 5 ancient: ^ Μ, the thickness of the ceramic sheet Preferably, it is set to be 4: the lining of the glutenization, and the high insulation ** μ m 〇 in the obtained ceramic embryo # pattern. The internal electrode 成为 is printed on the main surface to form a rectangular internal electrode 〜, these The alloy powder; the material of the conductor paste, preferably Ni, the number, and the 庇 Γ has formed the internal electrode pattern of the opacity sheet and the upper and lower pieces of the opaque sheet overlap the desired sheet 97_ into the (four) electrode pattern In the case of ceramics, according to 23 200904774, the upper and lower layers are in the same number of sheets. The internal electricity in the sheet laminate is formed into a sheet laminate. The half pattern is staggered. The pattern is successively oriented toward the long side: The two-layer laminated body is cut into a lattice shape, and the capacitor body molded body is formed by exposing the internal electricity. By this = 亟, the state of the internal electrode pattern after the cut-off electric cross is formed. ° The end faces of the molded body are staggered and exposed. After the body is formed, the body is degreased, and the pottery is the same firing condition and weakly reduced. Then, the heat treatment is performed, and then the coating is applied to the paste of the capacitor body, and the external electrode rubber 4 is applied to the main electrode 4 by twisting and baking. In addition, the externality can improve the mountability and form an electric clock film. Container: ::::: For the dielectric ceramics of the present invention [Examples] [Example 1] Two: Preparation: βτ powder, βα powder (composition system P f X=G·G5), _ powder , powder, Dy2〇3 ♦ minute, = end, = powder, - =: two = BT powder and the powder of the town, etc., and then mix the various powders of the additives according to the ratio shown in Tables 2 and 3. The raw material powder such as Hai is used in a purity of 99·(10). In addition, the average particle size of the powder and the BCT powder is as follows for the samples No. 1-Bu 49, 52, 53 Knife and 97111695 24 200904774 56 90. 1//m 'On the sample Ν〇. &quot;ο与5ι The average particle size is 0.25 (four), and the average particle size 〇12" is used for the sample N〇1_54, 55. Y2〇3#^ ' Dy2〇3t^ 'H〇2〇3#^ ' 'n-terminated, MnC〇3 powder and The V2〇5 powder is a glass powder composed of an average particle diameter of 1 US powder and BCT powder, and the auxiliary agent is made of SiG2=55, Ba(tetra), (10)7, and (4)%. Glass, DPT The addition of the glass terminal is set to 1 part by mass of the total amount of the β Τ powder and the BCT powder, and is set to be the same as the powder of the raw material powder (4). Wet mixing is carried out with a mixture of stupid and alcoholic alcohol. '' : The wet mixed powder is put into a mixed solvent of polyethylene glycol, and it is made to be mixed with the mixed formula of Du M J m T. (4) 祖# 5mm oxidized wrong grinding ball is applied to wet 2.5 (four) ceramic slab....The thickness of the 'thick piece is formed by the squeegee method to form a rectangular inner average particle size with Ni as the main component. 3&quot; Λ 胶 11 胶 胶 胶 胶 胶 11 胶 胶 胶 仫 仫 仫 仫 仫 仫 仫 仫 仫 仫 仫 仫 仫 仫 仫 Ni Ni Ni Ni Ni Ni Ni Ni Ni Ni Ni Ni Ni Ni Ni Ni Ni Ni Ni Ni Ni Ni Ni Ni Ni Ni Ni Ni Ni The printed pottery enamel reads. On the top and bottom of it, there are 360 pieces of the compensation layer, and the layer "electricity% clock: strip:::: including the layer, and then cut into the established ^ in..." _, Shi... When burning r: 97111695 25 200904774 2 in the moon: 4 hours of reoxidation treatment, the electric body is made. The size of the capacitor body is the thickness of the beneficial layer 2, the inner electrode layer is a bank: the right 48Χ〇.48_3' dielectric is additionally, the so-called "effective area"; = \ effective area is 0 · 3 ^ end face exposed way, The "inner body" is formed in different directions, and the burned capacitor has a weight of 4 areas. Macro 5|Floor... After the 仃 仃 笱 笱 笱 , , , , , , , 笱 笱 笱 笱 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四A layered ceramic capacitor is produced by sequentially performing electroplating on the surface. Further, the second and second are set to 10 samples for the laminated ceramic electric macros, and the evaluation is performed. Evaluation of temperature muscle, frequency lGkH7 ^ take the thousand mean. The dielectric constant is measured by the electrostatic capacitance: it is obtained from the measurement condition of the dielectric ==:. The other electrode layer is effective -55~125 °C range _set # When + $ μ degree characteristics are based on temperature coffee (four) disk = cut capacitor. Insulation resistance is based on DC power, and is commonly used. Conditional assessment. The insulation resistance of Tables 5, 6 and 9 is indicated by the exponential notation for inserting E between the mantissa and the 抨. The number of days of the shot is measured. The high temperature load test is based on the temperature (10)/(4)). The number of samples in the test is set to crystal:::: two groups of crystal particles, and the "97111695 - the average particle size of the crystal particles" constituting the second crystal group is for the dielectric ceramics 26 200904774 The grinding surface 'takes the shirt image displayed by the transmission electron microscope into the computer' and draws a diagonal line on the surface of the enamel, and performs the crystallization of the crystal rim present on the diagonal of the hai Image processing, and calculate the area of each particle, calculate the straight position when substituted with a circle having the same area, and obtain an average value of about 50 crystal particles of the obtained crystal. Further, the average particle diameter of the crystal particles is determined. The average grain growth rate of the dielectric powder. The calcium concentration in the relevant crystal particles is estimated to be about 30 crystal particles in the dielectric f-layer polishing surface which is ground in the cross section of the laminated ceramic capacitor. Elemental analysis was performed using a penetrating electron microscope with an attached elemental analysis machine. At this time, the spot size of the electron beam was set to _, and the analyzed place was on a straight line drawn from the vicinity of the grain boundary of the crystal grain toward the center. The points are set at substantially equal intervals. The analysis value is an average value of 4 to 5 points between the vicinity of the grain boundary and the center portion, and Ba, Ti, Ga, which are detected from the respective defects of the crystal particles. The total amount of v, Mg, rare earth element (10)) and Μη is set to 譲, and the concentration at this time is obtained. In this case, the selected crystal particles are obtained from the rim by image processing to determine the area of each particle, and are calculated. When the diameter of the crystal having the same area is substituted, the diameter of the crystal particle obtained by the diameter is regarded as a crystal particle within a range of ±60% of the average crystal grain size. The central portion is set to be within a range of 1/3 of the radius from the center of the inscribed circle of the crystal particle, and the vicinity of the grain boundary of the crystal particle is set to a region from the grain boundary to the inside of the crystal particle. The inscribed circle of the particle will use the transmission electron microscope 97111695 27 200904774::: The image shown 'Draws the inscribed circle on the computer surface, and then determines the central part of the crystal particle from the face of the face. j The composition of the dielectric ceramics will constitute The ratio of the area ratio of the crystal particles of the crystal group to the crystal particles of the second crystal group [C2/(CHC2), the area of the crystal particles ia of the first crystal group is represented by u, / the second crystal group is formed. The area of the crystal particles, b, is represented by ^, and is calculated from the area data of the average particle diameter of the crystal particles amp &amp; and 针对 for about 5 上述 of the above. In the sample shown in Table 丨 3, the sample N 1. 1~Heart, Μ' and 56 90 C2/(C1+C2) system 9. 9. Related samples Ν〇. 5〇, 51 and 54 C2/(C1+C2) 〇. 75. Related samples C2/(C1+C2) of N〇. 55 is 0·8. Further, it indicates the diffraction intensity of the (〇〇4) plane of the tetragonal barium titanate, and the surface of the cubic crystal barium titanate ( The ratio of the diffraction intensity of the surface was measured by using an X-ray diffraction apparatus having a Cuk α-tube, measuring at an angle of 2 0 102°, and measuring the ratio of the peak intensities. Further, the sample composition analysis of the obtained sintered body was carried out by ICPUnductively coupied Piasma analysis or atomic absorption analysis. In this case, the obtained dielectric ceramic, the mixture mixed with boric acid and sodium carbonate and dissolved, dissolved in hydrochloric acid, firstly subjected to qualitative analysis of the elements contained in the dielectric ceramic by atomic absorption analysis, and then, Each element of the special standard was diluted as a standard sample with a standard solution, and quantified by performing ICP emission spectrometry. In addition, the valence of each element is the number of valences shown in the periodic table and the oxygen demand is obtained. 97111695 28 200904774 The composition and firing temperature are as shown in Table 丨3. The composition of the oxide system is as follows: The elements in the sintered body are shown as 7 to 9. Among them, 矣 / p table 6 does not, the characteristic results are as follows, the components of the table are below the detection limit (in the iCP analysis of the dielectric ceramics, when Moer. C0.5#g/g or less), It is regarded as 0. The composition of the raw materials is not shown in Table 3. The composition of the dielectric pottery is shown in Table 7 ^ The degree of wearing, Table 4~6. The ratio of diffraction intensity, 纴"立早心斤不系) 丨X-ray dielectric loss of ceramics, absolute: = dielectric constant of electric ceramics, life characteristics during inspection. Temperature characteristics of book number, high temperature load test 97111695 29 200904774 [Table l] Sample No. MgO MnC〇3 V2〇 5 rare earth element second rare earth element (Tb4〇7) firing temperature molmoule type mol Moer °C 1-1 0.15 0.5 0.1 Υ2〇3 1 0 1130 1-2 0.1 0.5 0.1 Υ2〇 3 1 0 1130 1-3 0. 02 0.5 0.1 Υ2〇3 1 0 1130 1- 4 0 0.5 0.1 Υ2〇3 1 0 1130 1-5 0.05 0.2 0.1 Υ2〇3 1 0 1130 1- 6 0.02 0.2 0.1 Υ2〇 3 1 0 1130 1- 7 0 0.2 0.1 Υ2〇3 1 0 1130 1-8 0. 05 0 0.1 Υ2〇3 1 0 1130 1-9 0. 02 0 0.1 Υ2〇3 1 0 1130 1-10 0 0 0.1 Υ2〇3 1 0 1130 * 1- 11 0 0.5 0 Υ2〇3 1 0 1130 1- 12 0 0.5 0 .05 Υ2〇3 1 0 1130 1- 13 0 0.5 0.12 Υ2〇3 1 0 1130 1- 14 0 0.5 0.15 Υ2〇3 1 0 1130 1-15 0 0.5 0.2 Υ2〇3 1 0 1130 1-16 0 0.5 0.3 Υ2〇3 1 0 1130 *1-17 0 0.5 0.4 Υ2〇3 1 0 1130 1- 18 0.15 0.5 0.1 Υ2〇3 1 0.2 1130 1-19 0.1 0.5 0.1 Υ2〇3 1 0.2 1130 1- 20 0.02 0.5 0.1 Υ2 〇3 1 0.2 1130 1- 21 0 0.5 0.1 Υ2〇3 1 0.2 1130 1- 22 0.05 0.2 0.1 Υ2〇3 1 0.2 1130 1- 23 0.02 0.2 0.1 Υ2〇3 1 0.2 1130 1- 24 0 0.2 0.1 Υ2〇3 1 0.2 1130 1- 25 0.05 0.1 0.1 Υ2〇3 1 0.2 1130 1- 26 0. 02 0.1 0.1 Υ2〇3 1 0.2 1130 1-27 0 0.1 0.1 Υ2〇3 1 0.2 1130 1- 28 0.05 0 0.1 Υ2〇3 1 0.2 1130 Symbol * means a sample that exceeds the scope of the present invention. 97111695 30 200904774 [Table 2] Sample No. MgO MnC〇3 V2〇5 Rare earth element Second rare earth element (Tb4〇7) Firing temperature Moramole type Molmole °C 1- 29 0 02 0 0.1 Υ2〇3 1 0.2 1130 1- 30 0 0 0.1 Υ2〇3 1 0.2 1130 1- 31 0 0 0.1 Υ2〇3 1 0.05 1130 1- 32 0 0 0.1 Υ2〇3 1 0.1 1130 1- 33 0 0 0.1 Υ2〇3 1 0.3 1130 1- 34 0 0 0.1 Υ2〇3 1 0.4 1130 氺1- 35 0 0.5 0 Υ2〇3 1 0.2 1130 1- 36 0 0.5 0.05 Υ2〇3 1 0.2 1130 1- 37 0 0.5 0.12 Υ2〇3 1 0.2 1130 1- 38 0 0.5 0.15 Υ2〇3 1 0.2 1130 1- 39 0 0.5 0.2 Υ2〇3 1 0.2 1130 1- 40 0 0.5 0.3 Υ2〇3 1 0.2 1130 氺1- 41 0 0.5 0.4 Υ2〇3 1 0.2 1130 1- 42 0 0 0.1 Dy2〇3 1 0.2 1130 1- 43 0 0 0.1 Η〇2〇3 1 0.2 1130 1- 44 0 0 0.1 ΕΓ2〇3 1 0.2 1130 氺1- 45 0 0 0.1 Υ2〇3 0 0.2 1130 1- 46 0 0 0.1 Υ2〇3 0.5 0.2 1130 1- 47 0 0 0.1 Υ2〇3 1.5 0.2 1130 氺1- 48 0 0 0.1 Υ2〇3 2 0.2 1130 氺1- 49 0 0.7 0.1 Υ2〇3 1 0.2 1130 t 1- 50 0 0 0.1 Υ2〇3 1 0 1130 氺1- 51 0.15 0. 5 0 Υ2〇3 1 0 1130 1- 52 0 0 0.1 Υ2〇3 1 0.2 1200 1- 53 0 0 0.1 Υ2〇3 1 0.2 1200 1- 54 0 0 0.1 Υ2〇3 1 0.2 1050 1- 55 0 0 0.1 Υ2〇3 1 0.2 1100 Symbol* means a sample that exceeds the scope of the present invention. 97111695 31 200904774 [Table 3]

試料No. MgO MnCOa V2〇5 稀土族元素 第2稀土族元素 () 燒成溫度 莫耳 莫耳 莫耳 種類 莫耳 莫耳 °c 1-56 0. 75 0.3 0.05 Υ2〇3 0. 75 0 1150 1- 57 0.75 0.3 0.1 Υ2〇3 0.75 0 1150 1- 58 0.75 0.3 0.15 Υ2〇3 0.75 0 1150 1- 59 0. 75 0.3 0.2 Υ2〇3 0. 75 0 1150 1- 60 0. 75 0.3 0.3 Υ2〇3 0. 75 0 1150 1-61 0.3 0.3 0.1 Υ2〇3 0.75 0 1150 1- 62 0.4 0.3 0.1 Υ2〇3 0. 75 0 1150 1- 63 0.5 0.3 0.1 Υ2〇3 0. 75 0 1150 1- 64 0.9 0.3 0.1 Υ2〇3 0.75 0 1150 1- 65 1 0.3 0.1 Υ2〇3 0. 75 0 1150 * 1- 66 1.1 0.3 0.1 Υ2〇3 0. 75 0 1150 *1-67 0.75 0.3 0.1 Υ2〇3 0.3 0 1150 1-68 0.75 0.3 0.1 Υ2〇3 0.4 0 1150 1- 69 0.75 0.3 0.1 Υ2〇3 0.6 0 1150 1-70 0.75 0.3 0.1 Υ2〇3 0.9 0 1150 1-71 0.75 0.3 0.1 Υ2〇3 1 0 1150 1- 72 0.75 0.05 0.1 Υ2〇3 0.75 0 1150 1-73 0. 75 0.1 0.1 Υ2〇3 0. 75 0 1150 1- 74 0. 75 0.2 0.1 Υ2〇3 0. 75 0 1150 1-75 0. 75 0.4 0.1 Υ2〇3 0.75 0 1150 1- 76 0. 75 0.5 0.1 Υ2〇3 0. 75 0 1150 1-77 0.75 0.3 0.1 Υ2〇3 0. 75 0 1120 1-78 0.75 0.3 0.1 Υ2〇3 0.75 0 1180 木 1- 79 0.75 0.3 0 Υ2〇3 0.75 0 1150 1-80 0.75 0.3 0.15 Dy2〇3 0.75 0 1150 1-81 0. 75 0.3 0.15 Η〇2〇3 0. 75 0 1150 1-82 0.75 0.3 0.15 ΕΓ2〇3 0. 75 0 1150 1-83 0.75 0.3 0.1 Υ2〇3 0. 75 0.05 1150 1-84 0. 75 0.3 0.1 Υ2〇3 0.75 0.1 1150 1- 85 0.75 0.3 0.1 Υ2〇3 0.75 0.2 1150 1-86 0.75 0.3 0.1 Υ2〇3 0.75 0.3 1150 1- 87 0.75 0.3 0.1 Υ2〇3 0.75 0.4 1150 1- 88 0.75 0.3 0.1 Dy2〇3 0.75 0.2 1150 1-89 0.75 0.3 0.1 Η〇2〇3 0. 75 0.2 1150 1- 90 0.75 0.3 0.1 ΕΓ2〇3 0. 75 0.2 1150 記號*係指逾越本發明範圍外的試料。 97111695 32 200904774 [表4] 試料No. MgO MnO V2〇5 稀土族元素 第2稀土族元素 (Tb4〇7) 莫耳 莫耳 莫耳 種類 莫耳 莫耳 1- 1 0.15 0.5 0.1 Y2〇3 1 0 1-2 0.1 0.5 0.1 Υ2〇3 1 0 1- 3 0.02 0.5 0.1 Υ2〇3 1 0 1-4 0 0.5 0.1 Υ2〇3 1 0 1-5 0.05 0.2 0.1 Υ2〇3 1 0 1- 6 0.02 0.2 0.1 Υ203 1 0 1-7 0 0.2 0.1 m 1 0 1- 8 0.05 0 0.1 γ203 1 0 1-9 0.02 0 0.1 γ203 1 0 1-10 0 0 0.1 γ203 1 0 氺 1- 11 0 0.5 0 Υ203 1 0 1- 12 0 0.5 0.05 γ203 1 0 1- 13 0 0.5 0.12 γ203 1 0 1- 14 0 0.5 0.15 γ203 1 0 1-15 0 0.5 0.2 γ203 1 0 1- 16 0 0.5 0.3 γ203 1 0 *1-17 0 0.5 0.4 γ203 1 0 1- 18 0.15 0.5 0.1 γ203 1 0.2 1-19 0.1 0.5 0.1 Υ203 1 0.2 1- 20 0.02 0.5 0.1 γ203 1 0.2 1-21 0 0.5 0.1 γ203 1 0.2 1-22 0.05 0.2 0.1 γ203 1 0.2 1- 23 0.02 0.2 0.1 γ203 1 0.2 1-24 0 0.2 0.1 γ203 1 0.2 1- 25 0.05 0.1 0.1 γ203 1 0.2 1- 26 0.02 0.1 0.1 γ203 1 0.2 1- 27 0 0.1 0.1 γ203 1 0.2 1- 28 0.05 0 0.1 γ203 1 0.2 記號*係指逾越本發明範圍外的試料。 97111695 33 200904774 [表5]Sample No. MgO MnCOa V2〇5 Rare earth element second rare earth element () firing temperature Momomore Moir type Molmole °c 1-56 0. 75 0.3 0.05 Υ2〇3 0. 75 0 1150 1- 57 0.75 0.3 0.1 Υ2〇3 0.75 0 1150 1- 58 0.75 0.3 0.15 Υ2〇3 0.75 0 1150 1- 59 0. 75 0.3 0.2 Υ2〇3 0. 75 0 1150 1- 60 0. 75 0.3 0.3 Υ2〇 3 0. 75 0 1150 1-61 0.3 0.3 0.1 Υ2〇3 0.75 0 1150 1- 62 0.4 0.3 0.1 Υ2〇3 0. 75 0 1150 1- 63 0.5 0.3 0.1 Υ2〇3 0. 75 0 1150 1- 64 0.9 0.3 0.1 Υ2〇3 0.75 0 1150 1- 65 1 0.3 0.1 Υ2〇3 0. 75 0 1150 * 1- 66 1.1 0.3 Υ2〇3 0. 75 0 1150 *1-67 0.75 0.3 0.1 Υ2〇3 0.3 0 1150 1-68 0.75 0.3 0.1 Υ2〇3 0.4 0 1150 1- 69 0.75 0.3 0.1 Υ2〇3 0.6 0 1150 1-70 0.75 0.3 0.1 Υ2〇3 0.9 0 1150 1-71 0.75 0.3 0.1 Υ2〇3 1 0 1150 1- 72 0.75 0.05 0.1 Υ2〇3 0.75 0 1150 1-73 0. 75 0.1 0.1 Υ2〇3 0. 75 0 1150 1- 74 0. 75 0.2 0.1 Υ2〇3 0. 75 0 1150 1-75 0. 75 0.4 0.1 Υ2〇3 0.75 0 1150 1- 76 0. 75 0.5 0.1 Υ2〇3 0. 75 0 1150 1-77 0.75 0.3 0.1 Υ2〇3 0. 75 0 1120 1-78 0.75 0.3 0.1 Υ2〇3 0.75 0 1180 Wood 1- 79 0.75 0.3 0 Υ2〇3 0.75 0 1150 1-80 0.75 0.3 0.15 Dy2〇3 0.75 0 1150 1-81 0. 75 0.3 0.15 Η〇2〇 3 0. 75 0 1150 1-82 0.75 0.3 0.15 ΕΓ2〇3 0. 75 0 1150 1-83 0.75 0.3 0.1 Υ2〇3 0. 75 0.05 1150 1-84 0. 75 0.3 0.1 Υ2〇3 0.75 0.1 1150 1- 85 0.75 0.3 0.1 Υ2〇3 0.75 0.2 1150 1-86 0.75 0.3 0.1 Υ2〇3 0.75 0.3 1150 1- 87 0.75 0.3 0.1 Υ2〇3 0.75 0.4 1150 1- 88 0.75 0.3 0.1 Dy2〇3 0.75 0.2 1150 1-89 0.75 0.3 0.1 Η〇 2 〇 3 0. 75 0.2 1150 1- 90 0.75 0.3 0.1 ΕΓ 2 〇 3 0. 75 0.2 1150 The symbol * refers to a sample that exceeds the scope of the present invention. 97111695 32 200904774 [Table 4] Sample No. MgO MnO V2〇5 Rare Earth Group Element 2nd Rare Earth Element (Tb4〇7) Moromole Moir Type Molmers 1- 1 0.15 0.5 0.1 Y2〇3 1 0 1-2 0.1 0.5 0.1 Υ2〇3 1 0 1- 3 0.02 0.5 0.1 Υ2〇3 1 0 1-4 0 0.5 0.1 Υ2〇3 1 0 1-5 0.05 0.2 0.1 Υ2〇3 1 0 1- 6 0.02 0.2 0.1 Υ203 1 0 1-7 0 0.2 0.1 m 1 0 1- 8 0.05 0 0.1 γ203 1 0 1-9 0.02 0 0.1 γ203 1 0 1-10 0 0 0.1 γ203 1 0 氺1- 11 0 0.5 0 Υ203 1 0 1 - 12 0 0.5 0.05 γ203 1 0 1- 13 0 0.5 0.12 γ203 1 0 1- 14 0 0.5 0.15 γ203 1 0 1-15 0 0.5 0.2 γ203 1 0 1- 16 0 0.5 0.3 γ203 1 0 *1-17 0 0.5 0.4 γ203 1 0 1- 18 0.15 0.5 0.1 γ203 1 0.2 1-19 0.1 0.5 0.1 Υ203 1 0.2 1- 20 0.02 0.5 0.1 γ203 1 0.2 1-21 0 0.5 0.1 γ203 1 0.2 1-22 0.05 0.2 0.1 γ203 1 0.2 1 - 23 0.02 0.2 0.1 γ203 1 0.2 1-24 0 0.2 0.1 γ203 1 0.2 1- 25 0.05 0.1 0.1 γ203 1 0.2 1- 26 0.02 0.1 0.1 γ203 1 0.2 1- 27 0 0.1 0.1 γ203 1 0.2 1- 28 0.05 0 0.1 γ 203 1 0.2 Symbol * means a sample that exceeds the scope of the present invention. 97111695 33 200904774 [Table 5]

試料No. MgO MnO V2〇5 稀土族元素 第2稀土族元素 (Tb4〇7) 莫耳 莫耳 莫耳 種類 莫耳 莫耳 1-29 0. 02 0 0.1 Y2〇3 1 0.2 1- 30 0 0 0.1 Υ2〇3 1 0.2 1- 31 0 0 0.1 Υ2〇3 1 0. 05 1- 32 0 0 0.1 Υ2〇3 1 0.1 1- 33 0 0 0.1 Υ2〇3 1 0.3 1-34 0 0 0.1 Υ2〇3 1 0.4 *1-35 0 0.5 0 Υ2〇3 1 0.2 1-36 0 0.5 0.05 Υ2〇3 1 0.2 1-37 0 0.5 0.12 Υ2〇3 1 0.2 1- 38 0 0.5 0.15 Υ2〇3 1 0.2 1- 39 0 0.5 0.2 Υ2〇3 1 0.2 1- 40 0 0.5 0.3 Υ2〇3 1 0.2 木 1- 41 0 0.5 0.4 Υ2〇3 1 0.2 1-42 0 0 0.1 Dy2〇3 1 0.2 1-43 0 0 0.1 Η〇2〇3 1 0.2 1- 44 0 0 0.1 ΕΓ2〇3 1 0.2 ^ 1- 45 0 0 0.1 Υ2〇3 0 0.2 1- 46 0 0 0.1 Υ2〇3 0.5 0.2 1- 47 0 0 0.1 Υ2〇3 1.5 0.2 氺 1- 48 0 0 0.1 Υ2〇3 2 0.2 * 1- 49 0 0.7 0.1 Υ2〇3 1 0.2 *1-50 0 0 0.1 Υ2〇3 1 0 木 1- 51 0.15 0.5 0 Υ2〇3 1 0 1- 52 0 0 0.1 Υ2〇3 1 0.2 1-53 0 0 0.1 Υ2〇3 1 0.2 1- 54 0 0 0.1 Υ2〇3 1 0.2 1-55 0 0 0.1 Υ2〇3 1 0.2 記號*係指逾越本發明範圍外的試料。 97111695 34 200904774 [表6] 試料No. MgO MnO V2〇5 稀土族元素 第2稀土族元素 (Tb4〇7) 莫耳 莫耳 莫耳 種類 莫耳 莫耳 1-56 0. 75 0.3 0. 05 Y2〇3 0.75 0 1- 57 0.75 0.3 0.1 Υ2〇3 0.75 0 1- 58 0. 75 0.3 0.15 Υ2〇3 0.75 0 1- 59 0. 75 0.3 0.2 Υ2〇3 0.75 0 1-60 0. 75 0.3 0.3 Υ2〇3 0.75 0 1- 61 0.3 0.3 0.1 Υ2〇3 0.75 0 1- 62 0.4 0.3 0.1 Υ2〇3 0. 75 0 1-63 0.5 0.3 0.1 Υ2〇3 0. 75 0 1-64 0.9 0.3 0.1 Υ2〇3 0.75 0 1-65 1 0.3 0.1 Υ2〇3 0.75 0 *1-66 1.1 0.3 0.1 Υ2〇3 0.75 0 *1-67 0.75 0.3 0.1 Υ2〇3 0.3 0 1- 68 0.75 0.3 0.1 Υ2〇3 0.4 0 1- 69 0.75 0.3 0.1 Υ2〇3 0.6 0 1-70 0.75 0.3 0.1 Υ2〇3 0.9 0 1- 71 0. 75 0.3 0.1 Υ2〇3 1 0 1-72 0.75 0.05 0.1 Υ2〇3 0.75 0 1-73 0.75 0.1 0.1 Υ2〇3 0. 75 0 1-74 0. 75 0.2 0.1 Υ2〇3 0.75 0 1- 75 0.75 0.4 0.1 Υ2〇3 0.75 0 1- 76 0. 75 0.5 0.1 Υ2〇3 0. 75 0 1-77 0. 75 0.3 0.1 Υ2〇3 0.75 0 1-78 0. 75 0.3 0.1 Υ2〇3 0.75 0 *1-79 0.75 0.3 0 Υ2〇3 0.75 0 1-80 0.75 0.3 0.15 Dy2〇3 0.75 0 1- 81 0.75 0.3 0.15 Η〇2〇3 0.75 0 1- 82 0.75 0.3 0.15 Er2〇3 0.75 0 1-83 0. 75 0.3 0.1 Υ2〇3 0.75 0.05 1-84 0. 75 0.3 0.1 Υ2〇3 0.75 0.1 1-85 0.75 0.3 0.1 Υ2〇3 0.75 0.2 1-86 0.75 0.3 0.1 Υ2〇3 0.75 0.3 1-87 0. 75 0.3 0.1 Υ2〇3 0. 75 0.4 1- 88 0. 75 0.3 0.1 Dy2〇3 0.75 0.2 1-89 0. 75 0.3 0.1 Η〇2〇3 0. 75 0.2 1-90 0.75 0.3 0.1 ΕΓ2〇3 0.75 0.2 記號*係指逾越本發明範圍外的試料。 97111695 35 200904774 [表ΉSample No. MgO MnO V2〇5 rare earth element second rare earth element (Tb4〇7) Moramole type Moer 1-29 0. 02 0 0.1 Y2〇3 1 0.2 1- 30 0 0 0.1 Υ2〇3 1 0.2 1- 31 0 0 0.1 Υ2〇3 1 0. 05 1- 32 0 0 0.1 Υ2〇3 1 0.1 1- 33 0 0 0.1 Υ2〇3 1 0.3 1-34 0 0 0.1 Υ2〇3 1 0.4 *1-35 0 0.5 0 Υ2〇3 1 0.2 1-36 0 0.5 0.05 Υ2〇3 1 0.2 1-37 0 0.5 0.12 Υ2〇3 1 0.2 1- 38 0 0.5 0.15 Υ2〇3 1 0.2 1- 39 0 0.5 0.2 Υ2〇3 1 0.2 1- 40 0 0.5 0.3 Υ2〇3 1 0.2 Wood 1- 41 0 0.5 0.4 Υ2〇3 1 0.2 1-42 0 0 0.1 Dy2〇3 1 0.2 1-43 0 0 0.1 Η〇 2〇3 1 0.2 1- 44 0 0 0.1 ΕΓ2〇3 1 0.2 ^ 1- 45 0 0 0.1 Υ2〇3 0 0.2 1- 46 0 0 0.1 Υ2〇3 0.5 0.2 1- 47 0 0 0.1 Υ2〇3 1.5 0.2氺1 - 48 0 0 0.1 Υ2〇3 2 0.2 * 1- 49 0 0.7 0.1 Υ2〇3 1 0.2 *1-50 0 0 0.1 Υ2〇3 1 0 Wood 1- 51 0.15 0.5 0 Υ2〇3 1 0 1- 52 0 0 0.1 Υ2〇3 1 0.2 1-53 0 0 0.1 Υ2〇3 1 0.2 1- 54 0 0 0.1 Υ2〇3 1 0.2 1-55 0 0 0.1 Υ2〇3 1 0.2 Mark* means crossing the scope of the invention Sample outside. 97111695 34 200904774 [Table 6] Sample No. MgO MnO V2〇5 Rare earth element second rare earth element (Tb4〇7) Moramole type Moermoole 1-56 0. 75 0.3 0. 05 Y2 〇3 0.75 0 1- 57 0.75 0.3 0.1 Υ2〇3 0.75 0 1- 58 0. 75 0.3 0.15 Υ2〇3 0.75 0 1- 59 0. 75 0.3 0.2 Υ2〇3 0.75 0 1-60 0. 75 0.3 0.3 Υ2 〇3 0.75 0 1- 61 0.3 0.3 0.1 Υ2〇3 0.75 0 1- 62 0.4 0.3 0.1Υ2〇3 0. 75 0 1-63 0.5 0.3 0.1 Υ2〇3 0. 75 0 1-64 0.9 0.3 0.1 Υ2〇3 0.75 0 1-65 1 0.3 0.1 Υ2〇3 0.75 0 *1-66 1.1 0.3 0.1 Υ2〇3 0.75 0 *1-67 0.75 0.3 0.1 Υ2〇3 0.3 0 1- 68 0.75 0.3 0.1 Υ2〇3 0.4 0 1- 69 0.75 0.3 0.1 Υ2〇3 0.6 0 1-70 0.75 0.3 0.1 Υ2〇3 0.9 0 1- 71 0. 75 0.3 0.1 Υ2〇3 1 0 1-72 0.75 0.05 0.1 Υ2〇3 0.75 0 1-73 0.75 0.1 0.1 Υ2〇3 0. 75 0 1-74 0. 75 0.2 0.1 Υ2〇3 0.75 0 1- 75 0.75 0.4 0.1 Υ2〇3 0.75 0 1- 76 0. 75 0.5 0.1 Υ2〇3 0. 75 0 1-77 0 75 0.3 0.1 Υ2〇3 0.75 0 1-78 0. 75 0.3 0.1 Υ2〇3 0.75 0 *1-79 0.75 0.3 0 Υ2〇3 0.75 0 1-80 0.75 0.3 0.15 Dy2〇3 0 .75 0 1- 81 0.75 0.3 0.15 Η〇2〇3 0.75 0 1- 82 0.75 0.3 0.15 Er2〇3 0.75 0 1-83 0. 75 0.3 0.1 Υ2〇3 0.75 0.05 1-84 0. 75 0.3 0.1 Υ2〇 3 0.75 0.1 1-85 0.75 0.3 0.1 Υ2〇3 0.75 0.2 1-86 0.75 0.3 0.1 Υ2〇3 0.75 0.3 1-87 0. 75 0.3 0.1 Υ2〇3 0. 75 0.4 1- 88 0. 75 0.3 0.1 Dy2〇 3 0.75 0.2 1-89 0. 75 0.3 0.1 Η〇2〇3 0. 75 0.2 1-90 0.75 0.3 0.1 ΕΓ2〇3 0.75 0.2 The symbol * refers to a sample that exceeds the scope of the present invention. 97111695 35 200904774 [Former Ή

tmt 結躺子 長率 yjm. 繞射圓的 林 伸做 (25Ό (25Ό 縣fM# 高溫負|織中的 ###色 (170°C'30V) (IZW/jm) μιη % ^350^ 1.6 _ 3700 % Ω Ω X5R# X7RW X '&quot;Z 一----- 'J* ^ 10 ' 1-1 0.35 20 7.0Ε+08 7. 0Ε+08 〇一 1- 2 0.32 320 1.6 3800 18 7. 0Ε+08 7. 0Ε+08 〇 〇 55 s 1-3 0.31 310 1.6 3800 17 7. 0Ε+08 7. 0Ε+08 〇 〇 56 1- 4 0. 30 300 1.6 3700 16 7.0Ε+08 7. 2Ε+08 〇 〇 57 1- 5 0.32 320 1.6 3800 17 6.0Ε+08 6. ΟΕ+08 〇 〇 55 1-6 0.31 310 1.6 3800 16 6. 0Ε+08 6. 0Ε+08 〇 〇 56 1-7 0.30 300 1.6 3700 15 6.0Ε+08 6. 2Ε+08 〇 〇 57 1-8 0.32 320 1.6 3800 16 5. 0Ε+08 5.0Ε+08 〇 〇 55 〜 1- 9 0.31 310 1.6 3800 15 5. 0Ε+08 5.0Ε+08 〇 〇 56 1-10 0.30 300 1.6 3800 14 5.0Ε+08 5.2Ε+08 〇 〇 60 ~~~ 氺 1- 11 0.27 270 1.1 4000 14 9. 0Ε+08 2.0Ε+08 〇 〇 7 1- 12 0.29 290 1.3 3800 16 8. 0Ε+08 8. 3Ε+08 〇 〇 53 〜 1-13 0.31 310 1.4 3720 16 6. 5Ε+08 6.6Ε+08 〇 〇 55 〜 1- 14 0.32 320 1.5 3630 17 4. 5Ε+08 4. 7Ε+08 〇 〇 56 〜 1- 15 0.34 340 1.8 3350 22 3. 5Ε+08 3.6Ε+08 〇 〇 57 1-16 0.34 340 2 3350 22 3.0Ε+08 3.2Ε+08 〇 〇 57 * 1- 17 0.34 340 2.2 3200 25 9. 0Ε+07 9.0Ε+07 〇 〇 57 〜 1- 18 0.35 350 1.6 3700 20 7.2Ε+08 7. 2Ε+08 〇 X 50 1- 19 0.32 320 1.6 3800 18 7.2Ε+08 7. 2Ε+08 〇 〇 65 1- 20 0.31 310 1.6 3800 17 7.2Ε+08 7. 2Ε+08 〇 〇 67 1-21 0.30 300 1.6 3700 16 7.2Ε+08 7.4Ε+08 〇 〇 67 1-22 0.32 320 1.6 3800 17 6.2Ε+08 6. 2Ε+08 〇 〇 65 1- 23 0.31 310 1.6 3800 16 6.2Ε+08 6.2Ε+08 〇 〇 67 1-24 0.30 300 1.6 3800 16 6·2Ε+08 6. 3Ε+08 〇 〇 71 〜 1-25 0. 32 320 1.6 3800 17 6.2Ε+08 6.2Ε+08 〇 〇 65 1- 26 0.31 310 1.6 3800 16 5.3Ε+08 5.3Ε+08 〇 〇 — 67 1-27 0.30 300 1.6 3800 15 5. 3Ε+08 5. 5Ε+08 〇~ 〇 71 1-28 0.32 ^ 士 320 1.6 面 AL ΛΑ β 3800 *姓〇 17 5.3Ε+08 5. 3Ε+08 〇 〇 65 *氺 時的Ixt/Ixc比 :將表示正方晶系的(004)面之繞射強度設為Ixt,將表示立方晶系的(004)面之繞射強度設為jTmt knot lie long rate yjm. Diffraction round Lin Shen do (25 Ό (25Ό County fM# high temperature negative | woven in ###色(170°C'30V) (IZW/jm) μιη % ^350^ 1.6 _ 3700 % Ω Ω X5R# X7RW X '&quot;Z one----- 'J* ^ 10 ' 1-1 0.35 20 7.0Ε+08 7. 0Ε+08 〇一 1- 2 0.32 320 1.6 3800 18 7 0Ε+08 7. 0Ε+08 〇〇55 s 1-3 0.31 310 1.6 3800 17 7. 0Ε+08 7. 0Ε+08 〇〇56 1- 4 0. 30 300 1.6 3700 16 7.0Ε+08 7. 2Ε+08 〇〇57 1- 5 0.32 320 1.6 3800 17 6.0Ε+08 6. ΟΕ+08 〇〇55 1-6 0.31 310 1.6 3800 16 6. 0Ε+08 6. 0Ε+08 〇〇56 1-7 0.30 300 1.6 3700 15 6.0Ε+08 6. 2Ε+08 〇〇57 1-8 0.32 320 1.6 3800 16 5. 0Ε+08 5.0Ε+08 〇〇55 ~ 1- 9 0.31 310 1.6 3800 15 5. 0Ε+ 08 5.0Ε+08 〇〇56 1-10 0.30 300 1.6 3800 14 5.0Ε+08 5.2Ε+08 〇〇60 ~~~ 氺1- 11 0.27 270 1.1 4000 14 9. 0Ε+08 2.0Ε+08 〇〇 7 1- 12 0.29 290 1.3 3800 16 8. 0Ε+08 8. 3Ε+08 〇〇53 ~ 1-13 0.31 310 1.4 3720 16 6. 5Ε+08 6.6Ε+08 〇〇55 ~ 1- 14 0.32 320 1.5 3630 17 4. 5Ε+08 4. 7Ε+08 〇〇 56 ~ 1- 15 0.34 340 1.8 3350 22 3. 5Ε+08 3.6Ε+08 〇〇57 1-16 0.34 340 2 3350 22 3.0Ε+08 3.2Ε+08 〇〇57 * 1- 17 0.34 340 2.2 3200 25 9. 0Ε+07 9.0Ε+07 〇〇57 ~ 1- 18 0.35 350 1.6 3700 20 7.2Ε+08 7. 2Ε+08 〇X 50 1- 19 0.32 320 1.6 3800 18 7.2Ε+08 7. 2Ε+08 〇〇65 1- 20 0.31 310 1.6 3800 17 7.2Ε+08 7. 2Ε+08 〇〇67 1-21 0.30 300 1.6 3700 16 7.2Ε+08 7.4Ε+08 〇〇67 1-22 0.32 320 1.6 3800 17 6.2Ε+08 6. 2Ε+08 〇〇65 1- 23 0.31 310 1.6 3800 16 6.2Ε+08 6.2Ε+08 〇〇67 1-24 0.30 300 1.6 3800 16 6·2Ε+08 6. 3Ε+08 〇 〇71 ~ 1-25 0. 32 320 1.6 3800 17 6.2Ε+08 6.2Ε+08 〇〇65 1- 26 0.31 310 1.6 3800 16 5.3Ε+08 5.3Ε+08 〇〇— 67 1-27 0.30 300 1.6 3800 15 5. 3Ε+08 5. 5Ε+08 〇~ 〇71 1-28 0.32 ^ 士320 1.6 Face AL ΛΑ β 3800 *Late 〇17 5.3Ε+08 5. 3Ε+08 〇〇65 *氺Ixt /Ixc ratio: the diffraction intensity of the (004) plane representing the tetragonal system is set to Ixt, and the diffraction intensity of the (004) plane indicating the cubic system is set to j.

1^1 Tvf /Tvr* lU Ο ^ AAL .的1的值係指表示正方晶系的(004)面之繞射強度大於表示立方晶系的(〇〇4)面之燒 • 車1的值係指表示正方晶系的(004)面之繞射強度小於表示立方晶系的(〇〇4)面之 *** :〇:滿足X7R的情況,X :未滿足X7R的情況 # :〇:滿足X5R的情況時,X :未滿足X5R的情況 ##絕緣電阻係依在尾數部與指數部之間插入E的指數符號表示。 36 97111695 200904774 [表8]1^1 Tvf /Tvr* lU Ο ^ AAL . The value of 1 means that the diffraction intensity of the (004) plane of the tetragonal system is larger than that of the (〇〇4) plane of the cubic system. Means that the diffraction intensity of the (004) plane of the tetragonal system is smaller than the (〇〇4) plane of the cubic system: 〇: the case of satisfying X7R, X: the case of not satisfying X7R # :〇: When the case of X5R is satisfied, X: the case where X5R is not satisfied ## The insulation resistance is expressed by an index symbol in which E is inserted between the mantissa portion and the index portion. 36 97111695 200904774 [Table 8]

tmb. 結尉立子 長率 麟 繞射圖的 U mm (25Ό (25Ό 赚tni## 攸 15¾¾¾¾特 14 *···**— 敲負%^的 色 ⑽。C、30V) (3.15V/^in) (12.5V/^in) 卿 % — — % Ω Ω m xam 'J畴 1-29 0.31 310 &quot; 1.6 -3800 16 5.2Ε+08 5. 2E+08 67 1- 30 0. 30 300 1.6 3800 14 5.2Ε+08 5.4E+08 〇 〇 71 1- 31 0. 30 300 1.6 3900 14 5.2Ε+08 5.4E+08 〇 〇 62 1- 32 0. 30 300 1.6 3850 14 5.2Ε+08 5.4E+08 〇 〇 66 1- 33 0. 30 300 1.6 3700 14 5.2Ε+08 5.4E+08 〇 〇 57 1- 34 0. 30 300 1.6 3500 14 5.3Ε+08 5.5E+08 〇 〇 57 木 1— 35 0.27 270 1.1 4000 14 9.1Ε+08 2.0E+08 〇 〇 7 1- 36 0.29 290 1.4 3800 16 8.1E+08 8.2E+08 〇 〇 64 1- 37 0.31 310 1.4 3720 16 6.6E+08 6.7E+08 〇 〇 76 1- 38 0. 32 320 1.5 3630 17 4.6E+08 4.7E+08 〇 〇 80 1- 39 0. 34 340 1.8 3350 22 3.7E+08 3.8E+08 〇 〇 84 1- 40 0.33 330 2 3350 22 3.2E+08 3.3E+08 〇 〇 58 氺 1- 41 0. 34 340 2.2 3200 25 9.0E+07 9. 0E+07 〇 〇 58 1- 42 0.30 300 1.6 3700 14 5.1E+08 5. 2E+08 〇 〇 70 1- 43 0.30 300 1.6 3700 14 5.1E+08 5. 3E+08 〇 〇 70 1- 44 0.30 ^Too 1.6 3700 14 5.1E+08 5. 2E+08 〇 〇 70 氺 1一 45 0.30 300 1.6 3800 15 5.0E+08 2. 0E+08 〇 〇 11 1- 46 0.30 300 1.6 3800 14 5.0E+08 5.1E+08 〇 〇 70 1- 47 0.30 300 1.6 3800 14 5.1E+08 5.2E+08 〇 〇 70 0. 30 300 1.6 2950 14 5.2E+08 5.3E+08 〇 〇 70 *1-49 0.30 300 1.6 2950 15 5.1E+08 5. 2E+08 〇 〇 70 *1-50 0.30 120 0.6 3400 14 5.1E+08 1.0E+08 X X 5 木 1- 51 0.30 120 0.4 3350 16 8.1E+08 1. 5E+08 〇 〇 4 1- 52 0.40 400 1.6 4100 18 7.2E+08 7.3E+08 〇 〇 55 1- 53 0.43 430 1.6 4400 24 7.2E+08 7.3E+08 〇 〇 54 1- 54 0.24 240 1.6 3000 23 7.1E+08 7.2E+08 〇 〇 55 1- 55 0. 27 270 1.6 3100 23 7.1E+08 7. 2E+08 〇 〇 55 記號*係指逾越本發明範圍外的試料。 木本.將表不正方aa系的(004)面之繞射強度設為Ixt ’將表不立方晶系的(〇〇4)面之繞射強度設為lx。 時的 Ixt/Ixc 比。 ° ^ .Ixt/Ixc比較大於1的值係指表示正方晶系的(004)面之繞射強度大於表示立方晶系的(004)面 繞射強度的情況。 • Ixt/Ixc比較小於1的值係指表示正方晶系的(〇〇4)面之繞射強度小於表示立方晶系的(〇〇4)面 繞射強度的情況。 μ 林* :〇:滿足X7R的情況,X :未滿足X7R的情況 # :〇:滿足X5R的情況時,X :未滿足X5R的情況 ##絕緣電阻係依在尾數部與指數部之間插入Ε的指數符號表示》 97111695 37 200904774 [表9] 結^^子 取她徑 長率 m^sM as特 t± 紘 中的 tmb. 銳射撞1的 mm. (3.15V/iim) (12.5V//an) pm % — 一 % Ω Ω 1- 56 0.46 1.3 3800 16 8.0E+08 8. 3E+08 〇_ 一 53 1- 57 0.44 440 1.6 4500 10 7.1E+08 7.1E+08 〇 55 1-58 0.39 1.5 4320 9.6 4.5E+08 4. 7E+08 〇 56 1- 59 0.36 360 1.8 4200 9.1 3. 5E+08 3. 6E+08 〇 57 1- 60 0. 32 320 2.0 4000 8.5 3. 0E+08 3. 2E+08 〇 57 1-61 0.48 480 1.3 4800 10.7 7. 2E+08 7. 2E+08 〇 56 1-62 0.47 470 1.4 4670 10.5 7.2E+08 7. 2E+08 〇 56 1- 63 0. 46 460 1.5 4620 10.1 7. 2E+08 7. 2E+08 〇 56 1-64 0.41 410 1.5 4120 9.2 7. 3E+08 7. 3E+08 〇 57 1- 65 0.39 390 1.6 3980 8.9 7.4E+08 7. 4E+08 〇 58 *1-66 0.36 360 1.6 3700 8.9 7.4E+08 7_ 4E+08 X 58 Μ- 67 0.49 490 1.4 4760 11.7 7· 1E+08 2. 0E+08 〇 15 1-68 0.49 490 1.4 4760 11.7 7. 2E+08 7. 2E+08 〇 56 1-69 0.40 400 1.4 4360 10.2 7. 2E+08 7. 2E+08 〇 56 1-70 0.33 330 1.4 4020 9.1 7. 3E+08 7. 3E+08 〇 57 1- 71 0.31 310 1.5 3600 8.8 7. 5E+08 7. 5E+08 〇 58 1-72 0.44 440 1.3 4390 10 6. 0E+08 6. 0E+08 〇 55 1-73 0.44 440 1.4 4470 11 6.1E+08 6.1E+08 〇 56 1- 74 0.44 440 1.4 4490 11 6. 2E+08 6. 2E+08 〇 56 1- 75 0.46 460 1.4 4500 11.3 6. 3E+08 6. 3E+08 〇 57 1-76 0.45 450 1.5 4300 13 6. 5E+08 6.5E+08 〇 58 1- 77 0. 28 280 1.5 4000 10 7. 0E+08 7. 0E+08 〇 54 1- 78 0. 50 500 1.6 4700 12.3 7.1E+08 7.1E+08 〇 55 *1-79 0.16 160 0.8 3000 8.5 9. 0E+08 2.0E+08 〇 9 1-80 0.44 440 1.6 4480 10.1 5.1E+08 5.1E+08 〇一 54 1™ 81 0. 44 440 1.6 4470 10 5.1E+08 5.1E+08 〇 54 1- 82 0.43 430 1.6 4450 10 5.1E+08 5.1E+08 〇 54 1- 83 0.51 510 1.6 6010 10.5 7. 5E+08 7. 6E+08 〇 66 1- 84 0.52 520 1.6 6020 10.5 7. 0E+08 7.1E+08 〇 67 1-85 0. 55 550 1.6 6100 11 6. 9E+08 7. 0E+08 〇 71 1- 86 0.56 560 1.6 Γ 6150 11.6 6. 9E+08 7. 0E+08 〇 71 1-87 0. 57 568 1.6 6030 13.1 6. 8E+08 6. 9E+08 〇 72 1- 88 0.54 540 1.6 6090 11 6. 9E+08 7. 0E+08 〇 70 1- 89 0. 54 540 1.6 6080 11 6. 9E+08 7. 0E+08 〇 70 1-90 記號#格」 0.53 530 &amp;路明益 1.6 6010 11 6. 9E+08 7. 0E+08 〇 70 ^fxf/ΐχ^ΐ系的(QG4)面之繞射強度設為Ixt,將表示立方晶系的⑽4)面之繞射強度設為Ixc ΓTmb. U mm (25Ό (25Ό earn tni## 攸153⁄43⁄43⁄43⁄4 special 14 *···**) that knocks down %^ (10). C, 30V) (3.15V/^ In) (12.5V/^in) 卿% — — Ω Ω m xam 'J domain 1-29 0.31 310 &quot; 1.6 -3800 16 5.2Ε+08 5. 2E+08 67 1- 30 0. 30 300 1.6 3800 14 5.2Ε+08 5.4E+08 〇〇71 1- 31 0. 30 300 1.6 3900 14 5.2Ε+08 5.4E+08 〇〇62 1- 32 0. 30 300 1.6 3850 14 5.2Ε+08 5.4E +08 〇〇66 1- 33 0. 30 300 1.6 3700 14 5.2Ε+08 5.4E+08 〇〇57 1- 34 0. 30 300 1.6 3500 14 5.3Ε+08 5.5E+08 〇〇57 Wood 1— 35 0.27 270 1.1 4000 14 9.1Ε+08 2.0E+08 〇〇7 1- 36 0.29 290 1.4 3800 16 8.1E+08 8.2E+08 〇〇64 1- 37 0.31 310 1.4 3720 16 6.6E+08 6.7E +08 〇〇76 1- 38 0. 32 320 1.5 3630 17 4.6E+08 4.7E+08 〇〇80 1- 39 0. 34 340 1.8 3350 22 3.7E+08 3.8E+08 〇〇84 1- 40 0.33 330 2 3350 22 3.2E+08 3.3E+08 〇〇58 氺1- 41 0. 34 340 2.2 3200 25 9.0E+07 9. 0E+07 〇〇58 1- 42 0.30 300 1.6 3700 14 5.1E+ 08 5. 2E+08 〇〇70 1- 43 0 .30 300 1.6 3700 14 5.1E+08 5. 3E+08 〇〇70 1- 44 0.30 ^Too 1.6 3700 14 5.1E+08 5. 2E+08 〇〇70 氺1–45 0.30 300 1.6 3800 15 5.0E +08 2. 0E+08 〇〇11 1- 46 0.30 300 1.6 3800 14 5.0E+08 5.1E+08 〇〇70 1- 47 0.30 300 1.6 3800 14 5.1E+08 5.2E+08 〇〇70 0. 30 300 1.6 2950 14 5.2E+08 5.3E+08 〇〇70 *1-49 0.30 300 1.6 2950 15 5.1E+08 5. 2E+08 〇〇70 *1-50 0.30 120 0.6 3400 14 5.1E+08 1.0E+08 XX 5 Wood 1- 51 0.30 120 0.4 3350 16 8.1E+08 1. 5E+08 〇〇4 1- 52 0.40 400 1.6 4100 18 7.2E+08 7.3E+08 〇〇55 1- 53 0.43 430 1.6 4400 24 7.2E+08 7.3E+08 〇〇54 1- 54 0.24 240 1.6 3000 23 7.1E+08 7.2E+08 〇〇55 1- 55 0. 27 270 1.6 3100 23 7.1E+08 7. 2E+08 〇〇55 Mark* means a sample that exceeds the scope of the present invention. Woody. The diffraction intensity of the (004) plane of the non-square aa system is Ixt', and the diffraction intensity of the (〇〇4) plane of the cubic crystal system is set to lx. The ratio of Ixt/Ixc. ° ^ Ixt / Ixc is a value greater than 1 means that the diffraction intensity of the (004) plane of the tetragonal system is larger than the diffraction intensity of the (004) plane of the cubic system. • A value in which Ixt/Ixc is less than 1 means that the diffraction intensity of the (〇〇4) plane of the tetragonal system is smaller than the diffraction intensity of the (〇〇4) plane of the cubic system. μ 林* :〇: satisfies X7R, X: does not satisfy X7R# :〇: When X5R is satisfied, X: X5R is not satisfied ##Insulation resistance is inserted between the mantissa and the exponent指数 指数 指数 》 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 97 //an) pm % — one % Ω Ω 1- 56 0.46 1.3 3800 16 8.0E+08 8. 3E+08 〇_ a 53 1- 57 0.44 440 1.6 4500 10 7.1E+08 7.1E+08 〇55 1 -58 0.39 1.5 4320 9.6 4.5E+08 4. 7E+08 〇56 1- 59 0.36 360 1.8 4200 9.1 3. 5E+08 3. 6E+08 〇57 1- 60 0. 32 320 2.0 4000 8.5 3. 0E +08 3. 2E+08 〇57 1-61 0.48 480 1.3 4800 10.7 7. 2E+08 7. 2E+08 〇56 1-62 0.47 470 1.4 4670 10.5 7.2E+08 7. 2E+08 〇56 1- 63 0. 46 460 1.5 4620 10.1 7. 2E+08 7. 2E+08 〇56 1-64 0.41 410 1.5 4120 9.2 7. 3E+08 7. 3E+08 〇57 1- 65 0.39 390 1.6 3980 8.9 7.4E +08 7. 4E+08 〇58 *1-66 0.36 360 1.6 3700 8.9 7.4E+08 7_ 4E+08 X 58 Μ- 67 0.49 490 1.4 4760 11.7 7· 1E+08 2. 0E+08 〇15 1-68 0.49 490 1.4 4760 11.7 7. 2E+08 7. 2E+08 〇56 1-69 0.40 400 1.4 4360 10.2 7. 2E+08 7. 2E+08 〇56 1-70 0.33 330 1.4 4020 9.1 7. 3E+08 7. 3E+08 〇57 1- 71 0.31 310 1.5 3600 8.8 7. 5E+08 7. 5E+08 〇58 1-72 0.44 440 1.3 4390 10 6. 0E+08 6. 0E+08 〇55 1-73 0.44 440 1.4 4470 11 6.1E+08 6.1E+08 〇56 1- 74 0.44 440 1.4 4490 11 6. 2E+08 6. 2E+08 〇56 1- 75 0.46 460 1.4 4500 11.3 6. 3E+ 08 6. 3E+08 〇57 1-76 0.45 450 1.5 4300 13 6. 5E+08 6.5E+08 〇58 1- 77 0. 28 280 1.5 4000 10 7. 0E+08 7. 0E+08 〇54 1 - 78 0. 50 500 1.6 4700 12.3 7.1E+08 7.1E+08 〇55 *1-79 0.16 160 0.8 3000 8.5 9. 0E+08 2.0E+08 〇9 1-80 0.44 440 1.6 4480 10.1 5.1E+ 08 5.1E+08 〇一54 1TM 81 0. 44 440 1.6 4470 10 5.1E+08 5.1E+08 〇54 1- 82 0.43 430 1.6 4450 10 5.1E+08 5.1E+08 〇54 1- 83 0.51 510 1.6 6010 10.5 7. 5E+08 7. 6E+08 〇66 1- 84 0.52 520 1.6 6020 10.5 7. 0E+08 7.1E+08 〇67 1-85 0. 55 550 1.6 6100 11 6. 9E+08 7. 0E+08 〇71 1- 86 0.56 560 1.6 Γ 6150 11.6 6. 9E+08 7 0E+08 〇71 1-87 0. 57 568 1.6 6030 13.1 6. 8E+08 6. 9E+08 〇72 1- 88 0.54 540 1.6 6090 11 6. 9E+08 7. 0E+08 〇70 1- 89 0. 54 540 1.6 6080 11 6. 9E+08 7. 0E+08 〇70 1-90 Mark #格” 0.53 530 &amp; Lu Ming Yi 1.6 6010 11 6. 9E+08 7. 0E+08 〇70 ^ The diffraction intensity of the (QG4) plane of the fxf/ΐχ^ΐ system is set to Ixt, and the diffraction intensity of the (10)4) plane representing the cubic system is set to Ixc Γ

• 較点於。1雜健表*正方晶㈣⑽4)面之_姐衫立方晶'㈣⑽4)面之 •这㉝^¾¾^1的值鑛衫正方晶㈣⑽4)面之繞㈣度秘綠立方晶㈣(_面之 f :〇:滿足X5R的情況時,X :未滿η X5R的格讶 ##絕緣電阻係依在尾數部與指數部之間插入Ε的指數符號表示。 97111695 38 200904774 由表1〜9的結果中得知,本發明試料N〇.卜2〜ι〇 ' 12 〜16、18〜34、36〜40、42〜44、46、47、52〜65、68〜78 及80〜90,介電常數達3000以上,介電常數的溫度變化 滿足EIA規格的X5R特性,當將每單位厚度(1#m)所施加 直流電愿值設為3.15V與12.5V時,無絕緣電阻降低情 形,可獲得絕緣電阻的電壓依存性較小之介電陶瓷。此 外,高溫負荷試驗中的壽命特性在17(rc、15v/#m的條 〇件下達53小時以上。試料N〇 、1216、18 3“、 36〜40、42〜44、46、47、52〜65、68〜78 及 8〇〜9〇,係屬於 以鈦酸鋇為主成分,且相對於構成鈦酸鋇的鋇1〇〇莫耳之 含有:釩依Vz〇5換算計〇·05〜〇.3莫耳、鎂依此〇換 算計0〜1莫耳 '錳依Mn〇換算計〇〜〇 5莫耳、以及從釔、 鏑、鈥及铒中選擇的稀土族元素(RE)依REz〇3換算計 0·4〜1.5莫耳,更含有鈣,同時,結晶粒子係具有:由以 欽^鋇為主體,且與濃度〇· 2原子%以下的結晶粒子所構 成第1結晶群、以及由以鈦酸鋇為主體,且鈣濃度〇4原 子%以上的結晶粒子所構成第2結晶群,並在介電陶竟的 X射線繞射圖t ’表示正方晶系鈦酸鋇的(〇〇4)面之繞射 強度大於表示立方晶系鈦酸鋇的(004)面之繞射強度。 再者,試料No·1 — 〗〜10、12〜16、19〜34、36〜40、42〜44、 46 47、及52〜55 ’靜電電容的溫度變化滿足El A規格的 X7R特性’所施加直流電壓在介電質層每單位厚度(_) 為3. 15V與12. 5V之間,並無發現絕緣電阻降低情形,可 ㈣高絕緣性介電陶究。試料No.卜2〜10、12〜16、19』4、 97111695 39 200904774 36〜40 、 42〜44 、 46 、 47 、及 π , 成分,且相對於構成,鈦二目:5,係屬於以鈦酸鋇為主 苒成邊鈦ϊ文鋇的鋇丨〇〇莫 釩依V2〇5換算計〇 os 夫吁艾下,含有: 莫耳、以及從: 耳、鐘依Mn〇換算物5 其耳以及仉釔、鏑、鈥及餌中選摆砧链丄^ 依RE2〇3換算計〇 5〜i草 、、稀土族兀素(RE) 0〜(M莫耳。 莫耳,且鎂依_換算計設定為 其中,鎂依Mg〇換算計設為〇 12-16 , ?1 ,〇7 on 〇 夫今的-式科 No.4、7、10、 27、3〇〜34、36〜4〇、42〜44、 可獲得所施加直流雷懕力入士併 ^及52〜55 ’ 3.⑽與12 ^之門Λ f層每單位厚度(1&quot;)為 的高絕緣性介電陶究。 緣電阻&amp;加傾向(正變化) =二〇 3〇’若和含有同量的飢與稀土族 = = 有鎮歧、或者二成分均含有的電 瓦之4枓No·1—2、9及試料No. 1-19〜29之下叮沾丨八 電損失。試料No. !-10、30 #_下,可減少&quot; 相川係屬於以鈦酸鋇為主成分,且 、:冓成-亥鈦g文鋇的鋇i 〇〇莫耳之 換算計0U.3莫耳、以及^搞3有·叙依V205 稀土竑_ kdd、 攸釔、鏑、鈥及餌中選擇的 稀知兀素(RE)依_3換算計〇5• More than that. 1 Miscellaneous watch * square crystal (four) (10) 4) face _ sister shirt cubic crystal '(four) (10) 4) face • this value of 33 ^ 3⁄43⁄4 ^ 1 mine shirt square crystal (four) (10) 4) surface winding (four) degree secret green cubic crystal (four) (_ face f : 〇: When X5R is satisfied, X: Less than η X5R is surprised. ## The insulation resistance is expressed by the exponential notation inserted between the mantissa and the exponent. 97111695 38 200904774 Results from Tables 1 to 9 It is known that the sample of the present invention N〇.Bu 2~ι〇' 12~16, 18~34, 36~40, 42~44, 46, 47, 52~65, 68~78 and 80~90, dielectric The constant is more than 3000, and the temperature change of the dielectric constant satisfies the X5R characteristic of the EIA specification. When the DC power value per unit thickness (1#m) is set to 3.15V and 12.5V, no insulation resistance is reduced. Dielectric ceramics with low voltage dependence of insulation resistance. In addition, the life characteristics in the high-temperature load test are more than 53 hours under 17 (rc, 15v/#m strips. Samples N〇, 1216, 18 3", 36~40, 42~44, 46, 47, 52~65, 68~78 and 8〇~9〇, belonging to the main component of barium titanate, and relative to the composition of barium titanate Contains: Vanadium according to Vz〇5 conversion 〇·05~〇.3 Moule, magnesium according to this 〇 conversion meter 0~1 Moer's manganese Mn〇 conversion meter 〇~〇5 莫, and from 钇, 镝The rare earth element (RE) selected from 鈥, 鈥 and 铒 is 0·4~1.5 mol in terms of REz〇3, and contains more calcium. At the same time, the crystal granules have the main body and the concentration 〇 - 2 atom% or less of crystal particles constitute a first crystal group, and a second crystal group consisting of crystal particles mainly composed of barium titanate and having a calcium concentration of 原子 4 atom% or more, and X in the dielectric ceramics The ray diffraction pattern t ' indicates that the diffraction intensity of the (〇〇4) plane of the tetragonal barium titanate is larger than the diffraction intensity of the (004) plane of the cubic crystal barium titanate. Further, the sample No. 1 - 〖~10, 12~16, 19~34, 36~40, 42~44, 46 47, and 52~55 'The temperature change of the electrostatic capacitance satisfies the X7R characteristic of the El A specification'. The applied DC voltage is in the dielectric layer. The thickness per unit (_) is between 3.15V and 12.5V, and no insulation resistance is found. (4) High insulation dielectric ceramics. Sample No. 2~10, 12~16 , 19′′ 4, 97111695 39 200904774 36~40, 42~44, 46, 47, and π, composition, and relative to the composition, titanium dim: 5, belongs to the barium titanate钡 钡丨〇〇 钒 钒 V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V Select the anvil chain 丄 ^ According to the RE2 〇 3 conversion 〇 5 ~ i grass, rare earth 兀 ( (RE) 0 ~ (M Moer. Mohr, and magnesium is set to be in accordance with _ conversion meter, and magnesium is set to 〇12-16, ?1, 〇7 on M7 on 〇 今 今 - 式 式 式 No. 4, 7, 10, 27, 3 〇~34, 36~4〇, 42~44, can obtain the applied DC Thunder force into the ± and 52~55 ' 3. (10) and 12 ^ threshold Λ f layer per unit thickness (1 &quot;) High insulation dielectric ceramics. The edge resistance &amp; plus tendency (positive change) = two 〇 3 〇 ' if and the same amount of hunger and rare earth = = there is a town, or the two components of the electric tile 4 枓 No · 1 - 2, 9 And the sample No. 1-19~29 叮 叮 丨 电 eight electric losses. Sample No. !-10, 30 #_, can be reduced &quot; Aikawa belongs to the main component of barium titanate, and: 冓i-hai titanium g 钡 〇〇i 〇〇 Moer conversion meter 0U. 3 Mo Er, and ^ engage in 3 have · Su Yi V205 rare earth 竑 _ kdd, 攸钇, 镝, 鈥 and bait selected rare known alizarin (RE) according to _3 conversion 〇 5

MgO ^ ^ ^ π ^ ^ 3兵斗,亚將鎂依 靜電耳’及換算計設為〇莫耳, 静電電谷的溫度變化滿足ΕίΑ規格的X7R特性。 ^者’相對於構成鈦酸鎖的们〇〇莫耳之下,含有:鈒 依心〇5換算計〇. 〇5〜〇 3莫耳、鍤 換算…替订 兵耳稀土知几素⑽依_3MgO ^ ^ ^ π ^ ^ 3 corps, the sub-magnesium according to the electrostatic ear ' and the conversion meter is set to 〇 Mo Er, the temperature change of the electrostatic electric valley meets the X7R characteristics of the ΕίΑ specification. ^者' relative to the people who constitute the titanic acid lock, contains: 鈒 〇 〇 换算 换算 换算 换算 换算 换算 〇 〇 〇 〇 〇 〇 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫_3

換瞀^ 依_換算計㈣.1莫耳、及猛依MnO …十0〜0.5莫耳’且含有錢依制7換算計〇〇5〜〇· 3莫 97111695 200904774 耳的試料 No.1-2-9 特性。Change 瞀 ^ According to _ conversion meter (four). 1 Mo Er, and Meng MnO ... 10 0 ~ 0.5 Moer ' and contains money according to 7 conversion 〇〇 5 ~ 〇 · 3 Mo 97111695 200904774 Ear sample No. 1- 2-9 Features.

No. 1-19-34 ^ Λ(\ 1 12〜16之下〜4〇,相較於未含有铽的試料 下,更加提升高溫負荷試驗中的壽命 、OiWU、72〜76、78 80〜90,將可獲得所施加首、、ώ ^、 力直μ電昼在介電質層每單 (l#m)為3.15V與12 5卩之門* &gt; 曰母早位尽度 古絕缘性入.5V之間,並無絕緣電阻降低情形的 ▲緣性m麦,且介電常數可達侧以上, 失可在13.1%以下。試料N〇1_57〜59、6〇〜64、68^〇貝 72〜76、78、80〜90 ’係屬於相對於構成鈦酸顧的鋇_莫 耳=下,含有:鈒依V2〇5換算計〇. !〜〇. 3莫耳、鎮依_ 換异汁0.3〜0.9莫耳、猛依_換算計〇 〇5 〇. 5莫耳、 以及從紀、鋼、欽及銘巾透据1 ·( # β ,, 久蚪肀選擇1種的稀土族元素(RE)依 RE2〇3換算計0.4〜U料,且上述結晶粒子的平均粒徑 〇· 33〜0. 57y m。 其中,在铽依TbA換算計含有0 05〜03莫耳的組成 中’將結晶粒子平均粒徑設為G.5pQ57//in範圍内的試 料No.卜83〜90,可將介電常數提高達6〇1〇以上。 相對於此,組成不同於本發明試料、或晶粒成長比率低 於2倍,在介電陶瓷的χ射線繞射圖中,表示正方晶鈦酸 鋇的(004)面之繞射強度小於表示立方晶鈦酸鋇的(4〇〇) 面之繞射強度,踰越本發明範圍外的試料Ν〇.卜^、17、 35、4卜45、48〜51、66、67及79 ’介電常數小於3000、 或介電常數的溫度變化未能滿足ΕΙΑ規格的X5R特性、或 依每單位厚度(lem)所施加直流電壓值為12.5V///m施 97111695 41 200904774 行絕緣電阻測定時低於1〇8ω、、 性在15小時以下。 、成向溫負荷試驗的壽命特 [實施例2] ,、人除實知例j所示試 36-40^ 42^44 &gt; 46 M7&gt;52^6S 1 ^1 ° ' 1 6 ' 18^34 ' 成,更添加Yb2〇3粉末〇 35 、68〜78及80〜9〇的各組 施例1相同的方法製作試料,、:::,其餘均依照如同實 的方法,分別測定介電陶以;^依'^同實施例1相同 結晶粒子的平均粒徑、介電陶兗的介電 絕緣電阻、介電常數的溫度特性、“ 〃 “失、 性,並施行評估(試料2小78)。…皿負何試驗的壽命特 再者,除實施例i所示試料N〇.卜 依Yb2〇3換算計〇〜〇 q n 成更添加镱 外,其餘均依照如同會竑也丨门 々 只轭例1相同的方法製作試料,同時 依知、如同實施例1相同的太 占分別測定介電陶兗的組 成、X射U強度比、結晶粒子的平均粒徑、介電陶瓷 的介電常數、介電損失、絕緣電阻、介電常數的溫度特性、 高溫負荷試驗的壽命特性,並施行評估(試料 No.2-79〜85) 〇 再者,除實_ 1所示試料No.卜69的組成,更添加鐘 依Yb2〇3換算計〇〜0.9莫耳,且將燒成溫度設為119〇它之 外,其餘均依照如同實施例1相同的方法製作試料,同時 依照如同實施例1相同的方法,分別測定介電陶瓷的組 成、X射線繞射強度比、結晶粒子的平均粒徑、介電陶瓷 97111695 42 200904774 的介電常數、介電損失、絕续人♦也 、色緣電阻、介電常數的溫度 高溫負荷試驗的壽命# β ^ a m r p将性,並施行評仕r No.2-86〜92) 。 f 估(4 科 表10 13所示係起始原料的 14〜17所示係介電陶瓷的组# 风,、心成μ度,表 J亢旳組成,表18〜21 的X射線繞射強度比、έ士日私工认丁二 竹)丨电陶£ 介電常數、入、、、〇日曰粒子的平均粒徑、介電陶莞的 =二:::命:r'介電一特性、 [表 10]No. 1-19-34 ^ Λ (\ 1 12~16 under ~4〇, compared with the sample without bismuth, the life in the high temperature load test is further improved, OiWU, 72~76, 78 80~90 , will be able to obtain the first, ώ ^, force straight μ 昼 in the dielectric layer per single (l #m) is 3.15V and 12 5卩 door * &gt; 曰 mother early position full ancient insulation Between .5V, there is no ▲ edge m wheat with insulation resistance reduction, and the dielectric constant can reach above the side, the loss can be below 13.1%. Samples N〇1_57~59, 6〇~64, 68^〇 Shell 72~76, 78, 80~90 ' belongs to the 钡_莫耳=下, which contains: 鈒 V V2〇5 conversion !. !~〇. 3 Moer, Zhenyi _ change Icing juice 0.3~0.9 Moule, fiercely _ conversion meter 〇〇 5 〇. 5 Mo Er, and Ji Ji, steel, Qin and Ming towel through 1 · ( # β ,, 久蚪肀 select 1 kind of rare earth The element (RE) is 0.4 to U in terms of RE2〇3, and the average particle diameter of the above crystal particles is 33·33~0. 57y m. Among them, in the composition of 0 05 to 03 mol in the conversion of TbA 'The sample No. 8 in which the average particle diameter of the crystal particles is within the range of G.5pQ57//in 3 to 90, the dielectric constant can be increased by more than 6〇1〇. In contrast, the composition is different from the sample of the present invention, or the grain growth ratio is less than 2 times, in the x-ray diffraction pattern of the dielectric ceramic, The diffraction intensity of the (004) plane of the tetragonal barium titanate is less than the diffraction intensity of the (4 Å) plane representing the cubic crystal barium titanate, and the sample exceeding the scope of the present invention is Ν〇., ^, 17, 35 , 4b 45, 48~51, 66, 67, and 79 'The dielectric constant is less than 3000, or the dielectric constant temperature change does not satisfy the X5R characteristic of the ΕΙΑ specification, or the DC voltage value applied per unit thickness (lem) For the 12.5V///m application, 9711695 41 200904774, the insulation resistance measurement is less than 1〇8ω, and the performance is less than 15 hours. The life of the directional temperature load test is special [Example 2], except for the actual case j shown 36-40^42^44 &gt; 46 M7&gt;52^6S 1 ^1 ° ' 1 6 ' 18^34 'Into, add Yb2〇3 powder 〇35, 68~78 and 80~9〇 Each group of the same example 1 was prepared in the same manner as the sample, and:::, the rest were measured according to the actual method, respectively, and the same crystal grains were the same as in Example 1. The average particle size, dielectric insulating resistance of dielectric ceramics, temperature characteristics of dielectric constant, "〃", and evaluation, and evaluation (sample 2 small 78). In addition to the sample N 〇 卜 Y Y Y Y Y n n n n n n n n n n n n n n n n n n n n n n n n n n n n n n n n n n n n n n n n n n n n The same as in the first embodiment, the composition of the dielectric ceramics, the X-ray U intensity ratio, the average particle diameter of the crystal particles, the dielectric constant of the dielectric ceramic, the dielectric loss, the insulation resistance, and the dielectric constant were measured. The temperature characteristics and the life characteristics of the high-temperature load test were evaluated and evaluated (sample No. 2-79 to 85). In addition, the composition of the sample No. 69 shown in the actual _1 was added to the Yb2〇3 conversion meter. 〇~0.9 mol, and the firing temperature was set to 119 Torr, and the other samples were prepared in the same manner as in Example 1, and the composition of the dielectric ceramic was measured in the same manner as in Example 1, respectively. X-ray diffraction intensity ratio, average particle diameter of crystal particles, Dielectric ceramics 97111695 42 200904774 dielectric constant, dielectric loss, permanent ♦ also, color edge resistance, dielectric constant temperature, high temperature load test life # β ^ amrp will be, and the implementation of the evaluation of the official r No.2 -86~92). f Estimate (4 Tables 10 13 shows the starting materials of 14 to 17 of the group of dielectric ceramics shown in the wind #, the heart into μ degrees, the table J 亢旳 composition, Table 18~21 X-ray diffraction Intensity ratio, gentleman's day private worker recognizes Dingzhu)) 丨电陶 £ Dielectric constant, the average particle size of the intrusion particles, the infusion, the dielectric of the pottery = 2::: life: r' dielectric A characteristic, [Table 10]

97111695 43 200904774 [表 11]97111695 43 200904774 [Table 11]

試料 No. MgO MnC〇3 V2〇5 第1稀土族元素 第2稀土族元素 (Tb4〇7) 第3稀土族元素 (YbzOa) 燒成溫度 莫耳 莫耳 莫耳 種類 莫耳 莫耳 莫耳 °C 2-27 0.02 0 0.1 Y2〇3 1 0.2 0.35 1130 2- 28 0 0 0.1 Υ2〇3 1 0.2 0.35 1130 2- 29 0 0 0.1 Υ2〇3 1 0.05 0.35 1130 2-30 0 0 0.1 Υ2〇3 1 0.1 0.35 1130 2-31 0 0 0.1 Υ2〇3 1 0.3 0.35 1130 2-32 0 0 0.1 Υ2〇3 1 0.4 0.35 1130 2-33 0 0.5 0.05 Υ2〇3 1 0.2 0.35 1130 2-34 0 0.5 0.12 Υ2〇3 1 0.2 0.35 1130 2-35 0 0.5 0.15 Υ2〇3 1 0.2 0.35 1130 2-36 0 0.5 0.2 Υ2〇3 1 0.2 0.35 1130 2-37 0 0.5 0.3 Υ2〇3 1 0.2 0.35 1130 2-38 0 0 0.1 Dy2〇3 1 0.2 0.35 1130 2-39 0 0 0.1 Η〇2〇3 1 0.2 0.35 1130 2- 40 0 0 0.1 Er2〇3 1 0.2 0.35 1130 2-41 0 0 0.1 Υ2〇3 0.5 0.2 0.35 1130 2-42 0 0 0.1 Υζ〇3 1.5 0.2 0.35 1130 2-43 0 0 0.1 Υ2〇3 1 0.2 0.35 1200 2-44 0 0 0.1 Υ2〇3 1 0.2 0.35 1200 2- 45 0 0 0.1 Υ2〇3 1 0.2 0.35 1050 2-46 0 0 0.1 Υ2〇3 1 0.2 0.35 1100Sample No. MgO MnC〇3 V2〇5 The first rare earth element second rare earth element (Tb4〇7) The third rare earth element (YbzOa) firing temperature Momomore Moir type Moermoole C 2-27 0.02 0 0.1 Y2〇3 1 0.2 0.35 1130 2- 28 0 0 0.1 Υ2〇3 1 0.2 0.35 1130 2- 29 0 0 0.1 Υ2〇3 1 0.05 0.35 1130 2-30 0 0 0.1 Υ2〇3 1 0.1 0.35 1130 2-31 0 0 0.1 Υ2〇3 1 0.3 0.35 1130 2-32 0 0 0.1 Υ2〇3 1 0.4 0.35 1130 2-33 0 0.5 0.05 Υ2〇3 1 0.2 0.35 1130 2-34 0 0.5 0.12 Υ2〇 3 1 0.2 0.35 1130 2-35 0 0.5 0.15 Υ2〇3 1 0.2 0.35 1130 2-36 0 0.5 0.2 Υ2〇3 1 0.2 0.35 1130 2-37 0 0.5 0.3 Υ2〇3 1 0.2 0.35 1130 2-38 0 0 0.1 Dy2〇3 1 0.2 0.35 1130 2-39 0 0 0.1 Η〇2〇3 1 0.2 0.35 1130 2- 40 0 0 0.1 Er2〇3 1 0.2 0.35 1130 2-41 0 0 0.1 Υ2〇3 0.5 0.2 0.35 1130 2- 42 0 0 0.1 Υζ〇3 1.5 0.2 0.35 1130 2-43 0 0 0.1 Υ2〇3 1 0.2 0.35 1200 2-44 0 0 0.1 Υ2〇3 1 0.2 0.35 1200 2- 45 0 0 0.1 Υ2〇3 1 0.2 0.35 1050 2-46 0 0 0.1 Υ2〇3 1 0.2 0.35 1100

97111695 44 200904774 [表 12]97111695 44 200904774 [Table 12]

試料 No. MgO MnC〇3 m 稀土族元素 第2稀土族元素 (Tb4〇7) 第3稀土族元素 (Yb2〇3) 燒成溫度 莫耳 莫耳 莫耳 種類 莫耳 莫耳 莫耳 V 2-47 0.75 0.3 0.05 Y2〇3 0.75 0 0.35 1150 2- 48 0.75 0.3 0.1 Υ2〇3 0.75 0 0.35 1150 2-49 0.75 0.3 0.15 Υ2〇3 0.75 0 0.35 1150 2- 50 0.75 0.3 0.2 Υ2〇3 0.75 0 0.35 1150 2-51 0.75 0.3 0.3 Υ2〇3 0.75 0 0.35 1150 2-52 0.3 0.3 0.1 Υ2〇3 0.75 0 0.35 1150 2-53 0.4 0.3 0.1 Υ2〇3 0.75 0 0.35 1150 2-54 0.5 0.3 0.1 Υ2〇3 0.75 0 0. 35 1150 2- 55 0.9 0.3 0.1 Υ2〇3 0.75 0 0.35 1150 2- 56 1 0.3 0.1 Υ2〇3 0.75 0 0.35 1150 2-57 0.75 0.3 0.1 Υ2〇3 0.4 0 0.35 1150 2-58 0. 75 0.3 0.1 Υ2〇3 0.6 0 0.35 1150 2-59 0. 75 0.3 0.1 Υ2〇3 0.9 0 0.35 1150 2-60 0.75 0.3 0.1 Υ2〇3 1 0 0.35 1150 2-61 0.75 0.05 0.1 Υ2〇3 0.75 0 0.35 1150 2-62 0.75 0.1 0.1 Υ2〇3 0.75 0 0.35 1150 2-63 0.75 0.2 0.1 Υ2〇3 0.75 0 0.35 1150 2-64 0.75 0.4 0.1 Υ2〇3 0.75 0 0.35 1150 2-65 0.75 0.5 0.1 Υ2〇3 0.75 0 0.35 1150 2- 66 0.75 0.3 0.1 Υ2〇3 0.75 0 0.35 1120 2-67 0.75 0.3 0.1 Υ2〇3 0.75 0 0.35 1180 2- 68 0.75 0.3 0.15 Dy2〇3 0.75 0 0.35 1150 2- 69 0.75 0.3 0.15 Η〇2〇3 0.75 0 0. 35 1150 2-70 0.75 0.3 0.15 Er2〇3 0.75 0 0.35 1150 2- 71 0.75 0.3 0.1 Υζ〇3 0.75 0.05 0.35 1150 2-72 0.75 0.3 0.1 Υζ〇3 0.75 0.1 0.35 1150 2- 73 0.75 0.3 0.1 Υ2〇3 0.75 0.2 0.35 1150 2- 74 0.75 0.3 0.1 Υ2〇3 0. 75 0.3 0.35 1150 2-75 0.75 0.3 0.1 Υ203 0.75 0.4 0.35 1150 2- 76 0.75 0.3 0.1 Dy2〇3 0.75 0.2 0.35 1150 2-77 0. 75 0.3 0.1 Η〇2〇3 0.75 0.2 0.35 1150 2- 78 0. 75 0.3 0.1 Er2〇3 0.75 0.2 0.35 1150 97111695 45 200904774 [表 13] 試料No. MgO MnC〇3 V2〇5 稀土族元素 第2稀土族元素 (Tb4〇7) 第3稀土族元素 (Yb2〇3) 燒成溫度 莫耳 莫耳 莫耳 種類 莫耳 莫耳 莫耳 °C 2- 79 0 0 0.1 Y2〇3 1 0.2 0 1170 2-80 0 0 0.1 Υζ〇3 1 0.2 0.2 1170 2-81 0 0 0.1 Υ2〇3 1 0.2 0.3 1170 2-82 0 0 0.1 Υ2〇3 1 0.2 0.5 1170 2-83 0 0 0.1 Υ2〇3 1 0.2 0.6 1170 2-84 0 0 0.1 Υ2〇3 1 0.2 0.7 1170 2-85 0 0 0.1 Υ2〇3 1 0.2 0.9 1170 2-86 0.75 0.3 0.1 Υ2〇3 0.6 0 0 1190 2- 87 0.75 0.3 0.1 Υ2〇3 0.6 0 0.2 1190 2-88 0. 75 0.3 0.1 Υ2〇3 0.6 0 0.3 1190 2-89 0.75 0.3 0.1 Υ2〇3 0.6 0 0.5 1190 2-90 0.75 0.3 0.1 Υ2〇3 0.6 0 0.6 1190 2-91 0. 75 0.3 0.1 Υ2〇3 0.6 0 0.7 1190 2-92 0. 75 0.3 0.1 Υ2〇3 0.6 0 0.9 1190Sample No. MgO MnC〇3 m Rare earth element Second rare earth element (Tb4〇7) Third rare earth element (Yb2〇3) Firing temperature Molmers Moir type Moermoole V 2- 47 0.75 0.3 0.05 Y2〇3 0.75 0 0.35 1150 2- 48 0.75 0.3 0.1 Υ2〇3 0.75 0 0.35 1150 2-49 0.75 0.3 0.15 Υ2〇3 0.75 0 0.35 1150 2- 50 0.75 0.3 0.2 Υ2〇3 0.75 0 0.35 1150 2-51 0.75 0.3 0.3 Υ2〇3 0.75 0 0.35 1150 2-52 0.3 0.3 0.1 Υ2〇3 0.75 0 0.35 1150 2-53 0.4 0.3 0.1 Υ2〇3 0.75 0 0.35 1150 2-54 0.5 0.3 0.1 Υ2〇3 0.75 0 0. 35 1150 2- 55 0.9 0.3 0.1 Υ2〇3 0.75 0 0.35 1150 2- 56 1 0.3 0.1 Υ2〇3 0.75 0 0.35 1150 2-57 0.75 0.3 0.1 Υ2〇3 0.4 0 0.35 1150 2-58 0. 75 0.3 0.1 Υ2〇3 0.6 0 0.35 1150 2-59 0. 75 0.3 0.1 Υ2〇3 0.9 0 0.35 1150 2-60 0.75 0.3 0.1 Υ2〇3 1 0 0.35 1150 2-61 0.75 0.05 0.1 Υ2〇3 0.75 0 0.35 1150 2 -62 0.75 0.1 0.1 Υ2〇3 0.75 0 0.35 1150 2-63 0.75 0.2 0.1 Υ2〇3 0.75 0 0.35 1150 2-64 0.75 0.4 0.1 Υ2〇3 0.75 0 0.35 1150 2-65 0.75 0.5 0.1 Υ2〇3 0.75 0 0.35 1150 2 - 66 0.75 0.3 0.1 Υ2〇3 0.75 0 0.35 1120 2-67 0.75 0.3 0.1 Υ2〇3 0.75 0 0.35 1180 2- 68 0.75 0.3 0.15 Dy2〇3 0.75 0 0.35 1150 2- 69 0.75 0.3 0.15 Η〇2〇3 0.75 0 0. 35 1150 2-70 0.75 0.3 0.15 Er2〇3 0.75 0 0.35 1150 2- 71 0.75 0.3 0.1 Υζ〇3 0.75 0.05 0.35 1150 2-72 0.75 0.3 0.1 Υζ〇3 0.75 0.1 0.35 1150 2- 73 0.75 0.3 0.1 Υ2〇3 0.75 0.2 0.35 1150 2-74 0.75 0.3 0.1 Υ2〇3 0. 75 0.3 0.35 1150 2-75 0.75 0.3 0.1 Υ203 0.75 0.4 0.35 1150 2- 76 0.75 0.3 0.1 Dy2〇3 0.75 0.2 0.35 1150 2-77 0 75 0.3 0.1 Η〇2〇3 0.75 0.2 0.35 1150 2- 78 0. 75 0.3 0.1 Er2〇3 0.75 0.2 0.35 1150 97111695 45 200904774 [Table 13] Sample No. MgO MnC〇3 V2〇5 Rare Earth Group No. 2 Rare earth element (Tb4〇7) Third rare earth element (Yb2〇3) Firing temperature Momomore Moir type Moer Moer °C 2- 79 0 0 0.1 Y2〇3 1 0.2 0 1170 2 -80 0 0 0.1 Υζ〇3 1 0.2 0.2 1170 2-81 0 0 0.1 Υ2〇3 1 0.2 0.3 1170 2-82 0 0 0.1 Υ2〇3 1 0.2 0.5 1170 2-83 0 0 0.1 Υ2〇3 1 0.2 0.6 1170 2-84 0 0 0.1 Υ2〇3 1 0.2 0.7 1170 2-85 0 0 0.1 Υ2〇3 1 0.2 0.9 1170 2-86 0.75 0.3 0.1 Υ2〇3 0.6 0 0 1190 2- 87 0.75 0.3 0.1 Υ2〇3 0.6 0 0.2 1190 2 -88 0. 75 0.3 0.1 Υ2〇3 0.6 0 0.3 1190 2-89 0.75 0.3 0.1 Υ2〇3 0.6 0 0.5 1190 2-90 0.75 0.3 0.1 Υ2〇3 0.6 0 0.6 1190 2-91 0. 75 0.3 0.1 Υ2〇 3 0.6 0 0.7 1190 2-92 0. 75 0.3 0.1 Υ2〇3 0.6 0 0.9 1190

1 46 97111695 200904774 [表 14]1 46 97111695 200904774 [Table 14]

試料No. MgO MnO V2〇5 稀土族元素 第2稀土族元素 (Tb4〇7) 第3稀土族元素 (Yb2〇3) 莫耳 莫耳 莫耳 種類 莫耳 莫耳 莫耳 2-1 0.15 0.5 0.1 Y2〇3 1 0 0.35 2-2 0.1 0.5 0.1 Υ2〇3 1 0 0.35 2- 3 0.02 0.5 0.1 Ϊ2〇3 1 0 0. 35 2-4 0 0.5 0.1 Υ2〇3 1 0 0.35 2-5 0.05 0.2 0.1 Υ2〇3 1 0 0.35 2-6 0.02 0.2 0.1 Υ2〇3 1 0 0.35 2-7 0 0.2 0.1 Υ2〇3 1 0 0.35 2-8 0.05 0 0.1 Υ2〇3 1 0 0.35 2-9 0.02 0 0.1 Υ2〇3 1 0 0. 35 2-10 0 0 0.1 Υ2〇3 1 0 0.35 2-11 0 0.5 0.05 Υ2〇3 1 0 0.35 2-12 0 0.5 0.12 Υ2〇3 1 0 0.35 2-13 0 0.5 0.15 Υ2〇3 1 0 0.35 2-14 0 0.5 0.2 Υ2〇3 1 0 0.35 2-15 0 0.5 0.3 Υ2〇3 1 0 0.35 2-16 0.15 0.5 0.1 Υ2〇3 1 0.2 0.35 2-17 0.1 0.5 0.1 Υ2〇3 1 0.2 0.35 2- 18 0.02 0.5 0.1 Υ2〇3 1 0.2 0.35 2-19 0 0.5 0.1 Υ2〇3 1 0.2 0.35 2-20 0.05 0.2 0.1 Υ2〇3 1 0.2 0.35 2-21 0.02 0.2 0.1 Υ2〇3 1 0.2 0.35 2-22 0 0.2 0.1 Υ2〇3 1 0.2 0.35 2-23 0.05 0.1 0.1 Υ2〇3 1 0.2 0.35 2-24 0.02 0.1 0.1 Υ2〇3 1 0.2 0.35 2-25 0 0.1 0.1 Υ2〇3 1 0.2 0.35 2-26 0.05 0 0.1 Υ2〇3 1 0.2 0.35 97111695 47 200904774 [表 15]Sample No. MgO MnO V2〇5 Rare earth element second rare earth element (Tb4〇7) Third rare earth element (Yb2〇3) Moramole type Moer Moer 2-1 0.15 0.5 0.1 Y2〇3 1 0 0.35 2-2 0.1 0.5 0.1 Υ2〇3 1 0 0.35 2- 3 0.02 0.5 0.1 Ϊ2〇3 1 0 0. 35 2-4 0 0.5 0.1 Υ2〇3 1 0 0.35 2-5 0.05 0.2 0.1 Υ2〇3 1 0 0.35 2-6 0.02 0.2 0.1 Υ2〇3 1 0 0.35 2-7 0 0.2 0.1 Υ2〇3 1 0 0.35 2-8 0.05 0 0.1 Υ2〇3 1 0 0.35 2-9 0.02 0 0.1 Υ2〇 3 1 0 0. 35 2-10 0 0 0.1 Υ2〇3 1 0 0.35 2-11 0 0.5 0.05 Υ2〇3 1 0 0.35 2-12 0 0.5 0.12 Υ2〇3 1 0 0.35 2-13 0 0.5 0.15 Υ2〇 3 1 0 0.35 2-14 0 0.5 0.2 Υ2〇3 1 0 0.35 2-15 0 0.5 0.3 Υ2〇3 1 0 0.35 2-16 0.15 0.5 0.1 Υ2〇3 1 0.2 0.35 2-17 0.1 0.5 0.1 Υ2〇3 1 0.2 0.35 2- 18 0.02 0.5 0.1 Υ2〇3 1 0.2 0.35 2-19 0 0.5 0.1 Υ2〇3 1 0.2 0.35 2-20 0.05 0.2 0.1 Υ2〇3 1 0.2 0.35 2-21 0.02 0.2 0.1 Υ2〇3 1 0.2 0.35 2-22 0 0.2 0.1 Υ2〇3 1 0.2 0.35 2-23 0.05 0.1 0.1 Υ2〇3 1 0.2 0.35 2-24 0.02 0.1 0.1 Υ2〇3 1 0.2 0.35 2-25 0 0.1 0.1 Υ2〇3 1 0.2 0.35 2-26 0.05 0 0.1 Υ2〇3 1 0.2 0.35 97111695 47 200904774 [Table 15]

試料 No. MgO MnO V2〇5 稀土族元素 第2稀土族元素 (Tb4〇7) 第3稀土族元素 (Yb2〇3) 莫耳 莫耳 莫耳 種類 莫耳 莫耳 莫耳 2-27 0.02 0 0.1 Y2〇3 1 0.2 0.35 2-28 0 0 0.1 γ2〇3 1 0.2 0.35 2-29 0 0 0.1 Υ2〇3 1 0.05 0.35 2-30 0 0 0.1 Υ2〇3 1 0.1 0.35 2-31 0 0 0.1 Υ2〇3 1 0.3 0.35 2-32 0 0 0.1 γ2〇3 1 0.4 0.35 2-33 0 0.5 0.05 Υ2〇3 1 0.2 0.35 2- 34 0 0.5 0.12 Υ2〇3 1 0.2 0.35 2-35 0 0.5 0.15 Υ2〇3 1 0.2 0.35 2-36 0 0.5 0.2 Υ2〇3 1 0.2 0.35 2-37 0 0.5 0.3 Υ2〇3 1 0.2 0.35 2-38 0 0 0.1 Dy2〇3 1 0.2 0.35 2-39 0 0 0.1 Η〇2〇3 1 0.2 0.35 2- 40 0 0 0.1 Er2〇3 1 0.2 0.35 2- 41 0 0 0.1 Υ2〇3 0.5 0.2 0.35 2-42 0 0 0.1 Ϊ2〇3 1.5 0.2 0.35 2-43 0 0 0.1 Υ2〇3 1 0.2 0.35 2-44 0 0 0.1 Υ2〇3 1 0.2 0.35 2- 45 0 0 0.1 Υ2〇3 1 0.2 0.35 2-46 0 0 0.1 Υ2〇3 1 0.2 0.35 48 97111695 200904774 [表 16]Sample No. MgO MnO V2〇5 Rare earth element Second rare earth element (Tb4〇7) Third rare earth element (Yb2〇3) Moramole type Moermoole 2-27 0.02 0 0.1 Y2〇3 1 0.2 0.35 2-28 0 0 0.1 γ2〇3 1 0.2 0.35 2-29 0 0 0.1 Υ2〇3 1 0.05 0.35 2-30 0 0 0.1 Υ2〇3 1 0.1 0.35 2-31 0 0 0.1 Υ2〇 3 1 0.3 0.35 2-32 0 0 0.1 γ2〇3 1 0.4 0.35 2-33 0 0.5 0.05 Υ2〇3 1 0.2 0.35 2- 34 0 0.5 0.12 Υ2〇3 1 0.2 0.35 2-35 0 0.5 0.15 Υ2〇3 1 0.2 0.35 2-36 0 0.5 0.2 Υ2〇3 1 0.2 0.35 2-37 0 0.5 0.3 Υ2〇3 1 0.2 0.35 2-38 0 0 0.1 Dy2〇3 1 0.2 0.35 2-39 0 0 0.1 Η〇2〇3 1 0.2 0.35 2- 40 0 0 0.1 Er2〇3 1 0.2 0.35 2- 41 0 0 0.1 Υ2〇3 0.5 0.2 0.35 2-42 0 0 0.1 Ϊ2〇3 1.5 0.2 0.35 2-43 0 0 0.1 Υ2〇3 1 0.2 0.35 2-44 0 0 0.1 Υ2〇3 1 0.2 0.35 2- 45 0 0 0.1 Υ2〇3 1 0.2 0.35 2-46 0 0 0.1 Υ2〇3 1 0.2 0.35 48 97111695 200904774 [Table 16]

試料No. MgO MnO V2〇5 稀土族元素 第2稀土族元素 (Tb4〇7) 第3稀土族元素 (YbaOa) 莫耳 莫耳 莫耳 種類 莫耳 莫耳 莫耳 2-47 0.75 0.3 0.05 Y2〇3 0.75 0 0.35 2-48 0.75 0.3 0.1 Υ2〇3 0.75 0 0.35 2-49 0.75 0.3 0.15 Υ2〇3 0.75 0 0.35 2-50 0.75 0.3 0.2 Υ2〇3 0.75 0 0.35 2-51 0.75 0.3 0.3 Υ2〇3 0.75 0 0.35 2-52 0.3 0.3 0.1 Υ2〇3 0.75 0 0.35 2-53 0.4 0.3 0.1 Υ2〇3 0.75 0 0.35 2-54 0.5 0.3 0.1 Υ2〇3 0.75 0 0.35 2-55 0.9 0.3 0.1 Υ2〇3 0.75 0 0.35 2-56 1 0.3 0.1 Υ2〇3 0.75 0 0.35 2- 57 0.75 0.3 0.1 Υ2〇3 0.4 0 0.35 2-58 0.75 0.3 0.1 Υ2〇3 0.6 0 0.35 2-59 0.75 0.3 0.1 Υ2〇3 0.9 0 0.35 2- 60 0.75 0.3 0.1 Υ2〇3 1 0 0.35 2-61 0.75 0. 05 0.1 Υ2〇3 0.75 0 0.35 2-62 0.75 0.1 0.1 Υζ〇3 0.75 0 0.35 2-63 0.75 0.2 0.1 Υ2〇3 0. 75 0 0.35 2- 64 0.75 0.4 0.1 Υ2〇3 0.75 0 0.35 2-65 0.75 0.5 0.1 Υ2〇3 0.75 0 0.35 2-66 0.75 0.3 0.1 Υ2〇3 0.75 0 0.35 2-67 0.75 0.3 0.1 Υ2〇3 0.75 0 0.35 2-68 0.75 0.3 0.15 Dy2〇3 0.75 0 0.35 2-69 0.75 0.3 0.15 Η〇2〇3 0.75 0 0.35 2-70 0.75 0.3 0.15 Er2〇3 0.75 0 0.35 2-71 0.75 0.3 0.1 Υ2〇3 0.75 0.05 0.35 2-72 0.75 0.3 0.1 Υ2〇3 0.75 0.1 0.35 2-73 0.75 0.3 0.1 Υ2〇3 0.75 0.2 0.35 2-74 0.75 0.3 0.1 Υ2〇3 0.75 0.3 0.35 2- 75 0.75 0.3 0.1 Υ2〇3 0.75 0.4 0.35 2- 76 0.75 0.3 0.1 Dy2〇3 0.75 0.2 0.35 2-77 0.75 0.3 0.1 Η〇2〇3 0.75 0.2 0. 35 2-78 0.75 0.3 0.1 Er2〇3 0.75 0.2 0.35 97111695 49 200904774 [表π] 試料No. MgO MnO VaOs 稀土族元素 第2稀土族元素 (Tb4〇7) 第3稀土族元素 (Yb2〇3) 莫耳 莫耳 莫耳 種類 莫耳 莫耳 莫耳 2-79 0 0 0.1 Y2〇3 1 0.2 0 2-80 0 0 0.1 Υ2〇3 1 0.2 0.2 2- 81 0 0 0.1 Υ2〇3 1 0.2 0.3 2- 82 0 0 0.1 Υ2〇3 1 0.2 0.5 2-83 0 0 0.1 Υ2〇3 1 0.2 0.6 2-84 0 0 0.1 Ϊ2〇3 1 0.2 0.7 2-85 0 0 0.1 Υ2〇3 1 0.2 0.9 2-86 0.75 0.3 0.1 Υ2〇3 0.6 0 0 2-87 0.75 0.3 0.1 Υ2〇3 0.6 0 0.2 2-88 0.75 0.3 0.1 Υ2〇3 0.6 0 0.3 2-89 0.75 0.3 0.1 Υ2〇3 0.6 0 0.5 2-90 0.75 0.3 0.1 Υ2〇3 0.6 0 0.6 2-91 0.75 0.3 0.1 Υ2〇3 0.6 0 0.7 2-92 0.75 0.3 0.1 Υ2〇3 0.6 0 0.9Sample No. MgO MnO V2〇5 Rare earth element second rare earth element (Tb4〇7) Third rare earth element (YbaOa) Moramole type Moermoole 2-47 0.75 0.3 0.05 Y2〇 3 0.75 0 0.35 2-48 0.75 0.3 0.1 Υ2〇3 0.75 0 0.35 2-49 0.75 0.3 0.15 Υ2〇3 0.75 0 0.35 2-50 0.75 0.3 0.2 Υ2〇3 0.75 0 0.35 2-51 0.75 0.3 0.3 Υ2〇3 0.75 0 0.35 2-52 0.3 0.3 0.1 Υ2〇3 0.75 0 0.35 2-53 0.4 0.3 Υ2〇3 0.75 0 0.35 2-54 0.5 0.3 0.1 Υ2〇3 0.75 0 0.35 2-55 0.9 0.3 0.1 Υ2〇3 0.75 0 0.35 2-56 1 0.3 0.1 Υ2〇3 0.75 0 0.35 2- 57 0.75 0.3 0.1 Υ2〇3 0.4 0 0.35 2-58 0.75 0.3 0.1 Υ2〇3 0.6 0 0.35 2-59 0.75 0.3 0.1 Υ2〇3 0.9 0 0.35 2- 60 0.75 0.3 0.1 Υ2〇3 1 0 0.35 2-61 0.75 0. 05 0.1 Υ2〇3 0.75 0 0.35 2-62 0.75 0.1 0.1 Υζ〇3 0.75 0 0.35 2-63 0.75 0.2 0.1 Υ2〇3 0. 75 0 0.35 2- 64 0.75 0.4 0.1 Υ2〇3 0.75 0 0.35 2-65 0.75 0.5 0.1 Υ2〇3 0.75 0 0.35 2-66 0.75 0.3 0.1 Υ2〇3 0.75 0 0.35 2-67 0.75 0.3 0.1 Υ2〇3 0.75 0 0.35 2- 68 0.75 0.3 0.15 Dy2〇3 0.75 0 0. 35 2-69 0.75 0.3 0.15 Η〇2〇3 0.75 0 0.35 2-70 0.75 0.3 0.15 Er2〇3 0.75 0 0.35 2-71 0.75 0.3 0.1 Υ2〇3 0.75 0.05 0.35 2-72 0.75 0.3 0.1 Υ2〇3 0.75 0.1 0.35 2-73 0.75 0.3 0.1 Υ2〇3 0.75 0.2 0.35 2-74 0.75 0.3 0.1 Υ2〇3 0.75 0.3 0.35 2- 75 0.75 0.3 0.1 Υ2〇3 0.75 0.4 0.35 2- 76 0.75 0.3 0.1 Dy2〇3 0.75 0.2 0.35 2 -77 0.75 0.3 0.1 Η〇2〇3 0.75 0.2 0. 35 2-78 0.75 0.3 0.1 Er2〇3 0.75 0.2 0.35 97111695 49 200904774 [Table π] Sample No. MgO MnO VaOs Rare earth element second rare earth element (Tb4 〇7) 3rd rare earth element (Yb2〇3) Moramole type Moer Moer 2-79 0 0 0.1 Y2〇3 1 0.2 0 2-80 0 0 0.1 Υ2〇3 1 0.2 0.2 2- 81 0 0 0.1 Υ2〇3 1 0.2 0.3 2- 82 0 0 0.1 Υ2〇3 1 0.2 0.5 2-83 0 0 0.1 Υ2〇3 1 0.2 0.6 2-84 0 0 0.1 Ϊ2〇3 1 0.2 0.7 2- 85 0 0 0.1 Υ2〇3 1 0.2 0.9 2-86 0.75 0.3 0.1 Υ2〇3 0.6 0 0 2-87 0.75 0.3 0.1 Υ2〇3 0.6 0 0.2 2-88 0.75 0.3 0.1 Υ2〇3 0.6 0 0.3 2-89 0.75 0.3 0.1 Υ2〇3 0.6 0 0.5 2-90 0.75 0.3 0.1 Υ2〇3 0.6 0 0.6 2-91 0.75 0.3 0.1 Υ2〇3 0.6 0 0.7 2-92 0.75 0.3 0.1 Υ2〇3 0.6 0 0.9

97111695 50 200904774 [表 18]97111695 50 200904774 [Table 18]

謝物· 結晶粒子 長率 繞射圖的 林 (25Ό 嫌員失 (25。〇 絕緣 1 imM 性 1¾溫負知試驗中 的壽钟ί·色 (170°C'30V) (3-15V/&quot;m) (12.5V//an) m Γ % — % Ω Ω XTRfelsf: 小時 2-1 0. 35 350 1.6 3700 20 7. 0Ε+08 7. 0Ε+08 X -—_,叮 ^ 9 2-2 0.32 320 1.6 3800 18 7. 0Ε+08 7. 0Ε+08 〇 〇 54 2-3 0.31 310 1.6 3800 17 7. 0Ε+08 7. ΟΕ+08 〇 〇 55 2-4 0.30 300 1.6 3700 16 7. 0Ε+08 7. 2Ε+08 〇 〇 56 2-5 0.32 320 1.6 3800 17 6. 0Ε+08 6. 0Ε+08 〇 〇 54 2-6 0.31 310 1.6 3800 16 6. 0Ε+08 6. 0Ε+08 〇 〇 55 2-7 0.30 300 1.6 3700 15 6. 0Ε+08 6. 2Ε+08 〇 〇 56 2-8 0.32 320 1.6 3800 16 5. 0Ε+08 5. ΟΕ+08 〇 〇 54 ~~ 2-9 0.31 310 L6 3800 15 5. 0Ε+08 5. 0Ε+08 〇 〇 55 2-10 0. 30 300 1.6 3800 14 5. 0Ε+08 5. 2Ε+08 〇 〇 59 2-11 0.29 Γ&quot; 290 1.3 3800 16 8. 0Ε+08 8. 3Ε+08 〇 〇 52 2- 12 0.31 「310 1.4 3720 16 6. 5Ε+08 6. 6Ε+08 〇 〇 54 2- 13 0.32 320 1.5 3630 17 4. 5Ε+08 4. 7Ε+08 〇 〇 55 2-14 0.34 340 1.8 3350 22 3. 5Ε+08 3. 6Ε+08 〇 ο 56 2-15 0.34 340 2 3350 22 3. 0Ε+08 3. 2Ε+08 〇 ο 56 2-16 0.35 350 1.6 3700 20 7. 2Ε+08 7. 2Ε+08 〇 X 49 2- 17 0.32 320 1.6 3800 18 7. 2Ε+08 7. 2Ε+08 〇 ο 64 2-18 0.31 310 1.6 3800 17 7. 2Ε+08 7. 2Ε+08 〇 ο 66 ~~ 2- 19 0.30 300 1.6 3700 16 7. 2Ε+08 7.4Ε+08 〇 ο 66 2-20 0.32 320 1.6 3800 17 6. 2Ε+08 6. 2Ε+08 〇 〇 64 2-21 0.31 310 1.6 3800 16 6. 2Ε+08 6. 2Ε+08 〇 〇 66 2-22 0.30 300 1.6 3800 16 6. 2Ε+08 6. 3Ε+08 〇 ο 70 2-23 0. 32 320 1.6 3800 17 6. 2Ε+08 6. 2Ε+08 ο 〇 64〜 2-24 0.31 310 1.6 3800 16 5. 3Ε+08 5. 3Ε+08 〇 〇 66 2-25 0.30 300 1.6 3800 15 5. 3Ε+08 5. 5Ε+08 ο 〇 70 2-26 *木:腺矣 0.32 壬》不古 320 旦盔从/ 1.6 工々祕i 3800 17 ^ 1^4- 5. 3Ε+08 5. 3Ε+08 〇 〇 64 系的(GG4)面之繞度為 將表示立^^的^4)面^繞射‘度設為^ 1一。i u. uLiuw I χ·〇 〇〇υυ u D. 0tfW 5.3E+08 〇 〇 64 .於1的值係指表示正方晶系的(004)面之繞射強度大於表示立方晶系的(004)面之 繞射強度的情況。 .I^t/Ixc比气小於1的值係指表示正方晶系的(〇〇4)面之繞射強度小於表示立方晶系的(〇〇4)面 繞射強度的情況。 \ *林:〇:滿足X7R的情況,x :未滿足X7R的情況 # :〇:滿足X5R的情況時,X :未滿足X5R的情況 ##絕緣電阻係依在尾數部與指數部之間插入E的指數符號表示。 51 97111695 200904774 [表 19] Ο 謝狐 結離子 平土^&amp; 滅長率 麟 繞射圊的 η 介電錄 (25〇〇 介電損失 (25°〇 麟 1 119# 性 -—---^ 高溫中的 ⑽。C、30V) (3_ 15V/&quot;m) (ΙΖδν/卿) jum % — — % Ω Ω X®# J LMfWsc 2-27 0.31 310 1.6 3800 16 5. 2E+08 5.2E+08 Ο 66 2-28 0.30 300 1.6 3800 14 5. 2E+08 5.4E+08 〇 〇 70·~~ 2-29 0.30 300 1.6 3900 14 5. 2E+08 5.4E+08 〇 〇 2-30 0.30 300 1.6 3850 14 5. 2E+08 5.4E+08 〇 〇 65~~~~~ 2-31 0.30 300 1.6 3700 14 5.2E+08 5.4E+08 〇 〇 56~~~~~~ 2-32 0.30 300 1.6 3500 14 5.3E+08 5.5E+08 〇 〇 56~~~~~~ 2-33 0.29 290 1.4 3800 16 8.1E+08 8.2E+08 〇 〇 63~~ 2-34 0.31 310 1.4 3720 16 6.6E+08 6. 7E+08 〇 〇 75 2-35 0.32 320 1.5 3630 17 4· 6E+08 4. 7E+08 〇 〇 79^ 2-36 0.34 340 1.8 3350 22 3. 7E+08 3.8E+08 〇 〇 83 2-37 0.33 330 2 3350 22 3. 2E+08 3.3E+08 〇 〇 _ ----. 57 2-38 0.30 300 1.6 3700 14 5.1E+08 5. 2E+08 〇 〇 69 ~ 2-39 0.30 300 1.6 3700 14 5.1E+08 5.3E+08 〇 〇 69 2-40 0.30 300 1.6 3700 14 5.1E+08 5.2E+08 〇 〇 69 2-41 0.30 300 1.6 3800 14 5.0E+08 5.1E+08 〇 〇 69 2-42 0.30 300 1.6 3800 14 5.1E+08 Γ5.2Ε+08 〇 〇 69 2-43 0.40 400 1.6 4100 18 7. 2E+08 7. 3Ε+08 〇 〇 54 ^' 2-44 0.43 430 1.6 4400 24 7. 2E+08 7. 3Ε+08 〇 〇 53 2-45 0.24 240 1.6 3000 23 7.1E+08 7. 2Ε+08 〇 〇 54〜 2-46 0. 27 270 卜1·6 3100 23 7.1E+08 7. 2Ε+08 〇 Ο 54 S4fxf/lif ί系的(004)面之繞射強度設為Ixt,將表示立方晶系—強度詨為~^Thanks for the long-rate diffraction pattern of crystalline particles (25 嫌 suspected loss (25. 〇 insulation 1 imM sex 13⁄4 temperature negative test in the life clock ί· color (170 ° C '30V) (3-15V/&quot ;m) (12.5V//an) m Γ % — % Ω Ω XTRfelsf: hour 2-1 0. 35 350 1.6 3700 20 7. 0Ε+08 7. 0Ε+08 X -—_,叮^ 9 2- 2 0.32 320 1.6 3800 18 7. 0Ε+08 7. 0Ε+08 〇〇54 2-3 0.31 310 1.6 3800 17 7. 0Ε+08 7. ΟΕ+08 〇〇55 2-4 0.30 300 1.6 3700 16 7. 0Ε+08 7. 2Ε+08 〇〇56 2-5 0.32 320 1.6 3800 17 6. 0Ε+08 6. 0Ε+08 〇〇54 2-6 0.31 310 1.6 3800 16 6. 0Ε+08 6. 0Ε+08 〇〇55 2-7 0.30 300 1.6 3700 15 6. 0Ε+08 6. 2Ε+08 〇〇56 2-8 0.32 320 1.6 3800 16 5. 0Ε+08 5. ΟΕ+08 〇〇54 ~~ 2-9 0.31 310 L6 3800 15 5. 0Ε+08 5. 0Ε+08 〇〇55 2-10 0. 30 300 1.6 3800 14 5. 0Ε+08 5. 2Ε+08 〇〇59 2-11 0.29 Γ&quot; 290 1.3 3800 16 8. 0Ε+08 8. 3Ε+08 〇〇52 2- 12 0.31 “310 1.4 3720 16 6. 5Ε+08 6. 6Ε+08 〇〇54 2- 13 0.32 320 1.5 3630 17 4. 5Ε+08 4 . 7Ε+08 〇〇55 2-14 0.34 340 1.8 3350 22 3. 5Ε+08 3. 6Ε+08 〇ο 56 2-15 0.34 340 2 3350 22 3. 0Ε+08 3. 2Ε+08 〇ο 56 2-16 0.35 350 1.6 3700 20 7. 2Ε+08 7. 2Ε+08 〇X 49 2- 17 0.32 320 1.6 3800 18 7. 2Ε+08 7. 2Ε+08 〇ο 64 2-18 0.31 310 1.6 3800 17 7. 2Ε+08 7. 2Ε+08 〇ο 66 ~~ 2- 19 0.30 300 1.6 3700 16 7. 2Ε+08 7.4Ε+08 〇ο 66 2-20 0.32 320 1.6 3800 17 6. 2Ε+08 6. 2Ε+08 〇〇64 2-21 0.31 310 1.6 3800 16 6. 2Ε+08 6. 2Ε+08 〇〇66 2-22 0.30 300 1.6 3800 16 6. 2Ε+08 6. 3Ε+08 〇ο 70 2-23 0. 32 320 1.6 3800 17 6. 2Ε+08 6. 2Ε+08 ο 〇64~ 2-24 0.31 310 1.6 3800 16 5. 3Ε+08 5. 3Ε+08 〇〇66 2-25 0.30 300 1.6 3800 15 5. 3Ε+08 5. 5Ε+08 ο 〇 70 2-26 *Wood: Adenine 0.32 壬 不 不 320 320 320 320 320 320 320 320 3 1.6 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 3 The degree of circumstance is set to ^1 by the ^4) surface of the standing ^^. i u. uLiuw I χ·〇〇〇υυ u D. 0tfW 5.3E+08 〇〇64. The value at 1 means that the diffraction intensity of the (004) plane of the tetragonal system is greater than that of the cubic system (004). The case of the diffraction intensity of the surface. The value of .I^t/Ixc specific gas of less than 1 means that the diffraction intensity of the (〇〇4) plane of the tetragonal system is smaller than the diffraction intensity of the (〇〇4) plane of the cubic system. \ *林:〇: satisfies X7R, x: does not satisfy X7R# :〇: When X5R is satisfied, X: X5R is not satisfied ##Insulation resistance is inserted between the mantissa and the exponent The exponential notation of E. 51 97111695 200904774 [Table 19] Ο Xiehujie ion flat soil ^ &amp; extinction rate lining diffraction η dielectric record (25 〇〇 dielectric loss (25 ° unicorn 1 119 # sex----- ^ (10) in high temperature. C, 30V) (3_ 15V/&quot;m) (ΙΖδν/卿) jum % — — Ω Ω X®# J LMfWsc 2-27 0.31 310 1.6 3800 16 5. 2E+08 5.2E +08 Ο 66 2-28 0.30 300 1.6 3800 14 5. 2E+08 5.4E+08 〇〇70·~~ 2-29 0.30 300 1.6 3900 14 5. 2E+08 5.4E+08 〇〇2-30 0.30 300 1.6 3850 14 5. 2E+08 5.4E+08 〇〇65~~~~~ 2-31 0.30 300 1.6 3700 14 5.2E+08 5.4E+08 〇〇56~~~~~~ 2-32 0.30 300 1.6 3500 14 5.3E+08 5.5E+08 〇〇56~~~~~~ 2-33 0.29 290 1.4 3800 16 8.1E+08 8.2E+08 〇〇63~~ 2-34 0.31 310 1.4 3720 16 6.6E+08 6. 7E+08 〇〇75 2-35 0.32 320 1.5 3630 17 4· 6E+08 4. 7E+08 〇〇79^ 2-36 0.34 340 1.8 3350 22 3. 7E+08 3.8E+ 08 〇〇83 2-37 0.33 330 2 3350 22 3. 2E+08 3.3E+08 〇〇_ ----. 57 2-38 0.30 300 1.6 3700 14 5.1E+08 5. 2E+08 〇〇69 ~ 2-39 0.30 300 1.6 3700 14 5.1E+08 5.3E+08 〇〇69 2-40 0.30 300 1.6 3700 14 5.1E+08 5.2E+08 〇〇69 2-41 0.30 300 1.6 3800 14 5.0E+08 5.1E+08 〇〇69 2-42 0.30 300 1.6 3800 14 5.1E+08 Γ5.2Ε+08 〇〇69 2-43 0.40 400 1.6 4100 18 7. 2E+08 7. 3Ε+08 〇〇54 ^' 2-44 0.43 430 1.6 4400 24 7. 2E+08 7. 3Ε+08 〇 〇53 2-45 0.24 240 1.6 3000 23 7.1E+08 7. 2Ε+08 〇〇54~ 2-46 0. 27 270 Bu1·6 3100 23 7.1E+08 7. 2Ε+08 〇Ο 54 S4fxf/ The diffraction intensity of the (004) plane of the lif ί system is set to Ixt, which will represent the cubic system - the strength 詨 is ~^

• 比的較清If/的值係指表示正方晶系的(004)面之繞射強度大於表示立方晶系的(004)面 之 .度比的較的值係指表示正方晶系的(004)面之繞射強度小於表示立方晶系的(004)面之 *林:〇:滿^_ X7R的情況,X :未滿足X7R的情況 # :〇:滿足X5R的情況時,X :未滿足X5R的情況 ##絕緣電阻係依在尾數部與指數部之間插入E的指數符號表示。 97111695 52 200904774 [表 20] 長率• The value of the clear If/ is a value indicating that the diffraction intensity of the (004) plane of the tetragonal system is greater than the ratio of the (004) plane representing the cubic system. 004) The diffraction intensity of the surface is smaller than that of the (004) plane representing the cubic system: 〇: the case of full ^_X7R, X: the case where X7R is not satisfied # :〇: When X5R is satisfied, X: not The case where X5R is satisfied ## The insulation resistance is expressed by an index symbol in which E is inserted between the mantissa portion and the index portion. 97111695 52 200904774 [Table 20] Long rate

繞射圖的 U 介電錄 (25°〇 介電損失 (25°〇 絕缘ψιΜ (3.15V/ jum) (1Z 5V/ jum) 性 b溫負荷試驗中的 壽命特色 (170〇C、30V) 2-47 2-48 2- 49 2- 50 2- 51 2- 52 2-53 2- 54 2- 55 2-56 I- 57 2-58 2-59 2-60 2-61 2-62 2-63 2-64 2-65 2-66 2-67 2-68 2-69 I- 70 2- 71 2-72 I- 73 2-74 2-75 2-76 2—77 2- 78 /zm(Hi 0.44 0. 39 ).36 0. 32 0.48 0.47 0.46 0.41 0.39 0.49 0.40 0.33 0.31 0.44 λ 44 0.44 0.46 0.45 0.28 ).50 0.44 0.44 0.43 0.51 0.52 0.55 0.56 0.57 0. 54 0.54 0. 53 460 440 390 360 320 480 470 460 410 390 490 400 330 310 440 440 440 460 450 280 500 440 440 430 510 520 550 560 568 540 540 530 1.3U-dielectric recording of the diffraction pattern (25°〇 dielectric loss (25°〇 insulation ψιΜ (3.15V/ jum) (1Z 5V/ jum)) b life load characteristic (170〇C, 30V) 2 -47 2-48 2- 49 2- 50 2- 51 2- 52 2-53 2- 54 2- 55 2-56 I- 57 2-58 2-59 2-60 2-61 2-62 2-63 2-64 2-65 2-66 2-67 2-68 2-69 I- 70 2-71 2-72 I- 73 2-74 2-75 2-76 2-77 2-78 /zm(Hi 0.44 0. 39 ).36 0. 32 0.48 0.47 0.46 0.41 0.39 0.49 0.40 0.33 0.31 0.44 λ 44 0.44 0.46 0.45 0.28 ).50 0.44 0.44 0.43 0.51 0.52 0.55 0.56 0.57 0. 54 0.54 0. 53 460 440 390 360 320 480 470 460 410 390 490 400 330 310 440 440 440 460 450 280 500 440 440 430 510 520 550 560 568 540 540 530 1.3

1J 1·! 1.8 2.0 1.3 1·! 1·! 1.1 1.4 1.- 1.‘ 1.! 1.3 1.』 1. 1.4 1.5 1.5 l.i 1.1 1. 1.6 1.6 1.6 1. 1.6 l.i 1.6 1. 1. 3800 4500 4320 4200 4000 4800 4670 4620 4120 3980 4760 4360 4020 3600 4390 4470 4490 4500 4300 4000 4700 4480 4470 4450 6010 6020 6100 6150 6030 6090 6080 6010 % 9.6 9.1 8.5 10.7 10.5 10.1 9.2 8.9 11. 10.2 3.1 8.8 11 11 11.3 13 12.3 10.1 10 10.5 10. 11 11. 13.1 11 11 11 旦 8. 0E+08 ϋ 8. 3E+08 X5R# 52 7.1E+08 7.1E+08 〇 54 4. 5E+08 4. 7E+08 〇 55 3. 5E+08 3. 0E+08 7. 2E+08 7. 2E+08 7. 2E+08 7. 3E+08 7.4E+08 7. 2E+08 7. 2E+08 7. 3E+08 7.5E+08 6. 0E+08 6.1Ε+08 6. 2Ε+08 6. 3Ε+08 6. 5Ε+08 7. 0E+08 7.1E+08 5.1E+08 5.1E+08 5.1E+08 7. 5E+08 7. 0E+08 6. 9E+08 6. 9E+08 6.8E+08 6. 9E+08 6. 9E+08 6. 9E+08 3. 6E+08 3. 2E+08 7. 2E+08 7. 2E+08 7.2E+08 7. 3E+08 7.4E+08 7. 2E+08 7. 2E+08 7. 3E+08 7. 5E+08 6. 0E+08 6.1Ε+08 6. 2Ε+08 6. 3Ε+08 6. 5Ε+08 7. 0E+08 7.1E+08 5.1E+08 5.1E+08 5.1E+08 7. 6E+08 7.1E+08 7. 0E+08 7. 0E+08 3. 9E+08 7. 0E+08 7. 0E+08 7. 0E+08 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 55 55 55 57 55 55 &quot;56&quot; 57 54 55 55 56 57 53 54 53 71 系以_面之繞射強度'設為強度 • 度比的Ilf»1的健指表示正方晶系的(〇〇4)面之繞射強度大於表示立方晶系的⑽4)面之 • 況於1的值係指表示正方晶㈣_)面之繞射強度小於表示立方晶㈣⑽4)面之 L:〇3足的情況時’x:未滿足X5R的情況 ##絕緣電阻係依在尾數部與指數部之間插入E的指數符號表示。 97111695 53 200904774 [表 21] 結晶粒子 平_徑 職 絕缘ΊΠΒ# 高溫負中 (170eC'30V) 試術 長率 繞射圖的 5級眯 林 介電雜 (25°〇 介電損失 (25〇〇 (3.15V///m) 02. δν/,ωη) 介電特|± JUID %_ — % Ω Ω 刪 X7Rrn 71 2-79 0. 35 350 1.7 4200 14 5. 2Ε+08 5.4Ε+08 2-80 0.35 350 1.7 4200 14 5. 2Ε+08 5.4Ε+08 〇 〇 ------- 69 2-81 0. 33 330 1.6 3900 14 5. 2Ε+08 5.4Ε+08 〇 〇 68 2-82 0. 32 320 1.6 3900 15 5. 2Ε+08 5. 4Ε+08 〇 〇 64 2-83 0.32 320 1.6 3900 16 5. 2Ε+08 5.4Ε+08 〇 〇 62 2-84 0. 32 320 1.6 3850 17 5. 2Ε+08 5.4Ε+08 〇 〇 45 2-85 0.31 310 1.6 3750 19 5. 2Ε+08 5. 4Ε+08 〇 〇 33 2-86 0.45 450 1.7 4700 11 7.1Ε+08 7.1Ε+08 X 55 ' 2-87 0.45 450 1.7 4700 11 7.1Ε+08 7.1Ε+08 〇 X 55 2-88 0.42 420 1.6 4470 12 7.1Ε+08 7.1Ε+08 〇 X 54 2-89 0.42 420 1.6 4430 12 7.1Ε+08 7.1Ε+08 〇 X 54 2-90 0.42 420 1.8 4410 13 7.1Ε+08 7.1Ε+08 〇 X 53 2-91 0.42 420 1.6 4400 13 7.1Ε+08 7.1Ε+08 〇 X 43~~~ 2-92 | 朱太:il吏主 0.41 士·τ 士 410 曰各从rn 1.6 kh 4390 15 迅盔lv 7. 0Ε+08 7. 0Ε+08 〇 X 30 時的 Ixt/Ixc 比。 义** * Xc Γ • 1的值係指表示正方晶系的(004)面之繞射強度大於表示立方晶系的(004)面之 .Ixt/Ixc比較小於1的值係指表示正方晶系的(004)面之繞射強度小於表示立方晶系的(004)面之 繞射強度的情況。 &lt; # :〇:滿足X5R的情況時,X :未滿足X5R的情況 林* :〇:滿足X7R的情況,X :未滿足X7R的情況 ##絕緣電阻係依在尾數部與指數部之間插入E的指數符號表示。 由表10〜21所示結果中得知’镱依Yb2〇3換算計含有〇. 35 莫耳的s式料No. 2-1〜78’均可獲得與未含有鏡之組成的實 施例1之試料No. 1-1〜10、12〜16、18〜34、36〜40、42〜44、 46、47、52〜65、68~78及80〜90分別相等級的特性。 再者’試料No. 2-79〜85中,镱依γ!).換算計含有 0. 3〜0. 6莫耳的試料No. 2-81〜83 ’雖燒成溫度較高於實施 例1所示試料No. 1-30的介電陶瓷燒成溫度高出4〇。(:, 但是仍具有與實施例1所示試料No. 1 -30的介電陶竟大致 相等級的特性。 54 97111695 200904774 再者’試料No· 2-86〜92中,镱依Yb2〇3換算計含有 0. 3〜0· 6莫耳的試料No. 2〜88〜90,燒成溫度雖較實施例j 所示試料No.卜69的介電陶瓷燒成溫度高出4〇t:,但是 仍具有與實施例1所示試料N〇.〗_69的介電陶瓷大致相= 級的特性。依此,從試料N〇. 2_8卜83、88〜9〇的介電陶瓷 中得知,藉由镱依Yb2〇3換算計含有〇·3〜〇 6莫耳,即使 燒成溫度在4(TC範圍内發生變動情形,仍可縮小介電陶 瓷的介電特性(介電常數、介電損失等)變動。 【圖式簡單說明】 圖1為本發明介電陶瓷的微構造剖面示意圖。 圖2 (a)為本發明介電陶瓷的試料n〇. 4之X射線繞射 圖;(b)為比較例介電陶兗的試料N 〇. 5丨之χ射線繞射圖。 圖3為本發明積層陶瓷電容器例的剖面示意圖。 【主要元件符號說明】 1 ' la ' lb 結晶粒子 晶界相 4 外部電極 5 介電質層 7 内部電極層 10 電容器本體 10A 積層體 97111695 551J 1·! 1.8 2.0 1.3 1·! 1·! 1.1 1.4 1.- 1.' 1.! 1.3 1.』 1. 1.4 1.5 1.5 li 1.1 1. 1.6 1.6 1.6 1. 1.6 li 1.6 1. 1. 3800 4500 4320 4200 4000 4800 4670 4620 4120 3980 4760 4360 4020 3600 4390 4470 4490 4500 4300 4000 4700 4480 4470 4450 6010 6020 6100 6150 6030 6090 6080 6010 % 9.6 9.1 8.5 10.7 10.5 10.1 9.2 8.9 11. 10.2 3.1 8.8 11 11 11.3 13 12.3 10.1 10 10.5 10. 11 11. 13.1 11 11 11 Dan 8. 0E+08 ϋ 8. 3E+08 X5R# 52 7.1E+08 7.1E+08 〇54 4. 5E+08 4. 7E+08 〇55 3 5E+08 3. 0E+08 7. 2E+08 7. 2E+08 7. 2E+08 7. 3E+08 7.4E+08 7. 2E+08 7. 2E+08 7. 3E+08 7.5E +08 6. 0E+08 6.1Ε+08 6. 2Ε+08 6. 3Ε+08 6. 5Ε+08 7. 0E+08 7.1E+08 5.1E+08 5.1E+08 5.1E+08 7. 5E +08 7. 0E+08 6. 9E+08 6. 9E+08 6.8E+08 6. 9E+08 6. 9E+08 6. 9E+08 3. 6E+08 3. 2E+08 7. 2E+ 08 7. 2E+08 7.2E+08 7. 3E+08 7.4E+08 7. 2E+08 7. 2E+08 7. 3E+08 7. 5E+08 6. 0E+08 6.1Ε+08 6. 2Ε+08 6. 3Ε+08 6. 5Ε+08 7. 0E+08 7.1E+08 5.1E+08 5.1E+08 5.1E+08 7. 6E+08 7.1E+08 7. 0E+08 7. 0E+08 3. 9E+08 7. 0E+08 7. 0E+08 7. 0E+08 〇〇〇 〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇〇55 55 55 57 55 55 &quot;56&quot; 57 54 55 55 56 57 53 54 53 71 The finger of 'Ilf»1 whose intensity is set to the intensity/degree ratio indicates that the diffraction intensity of the (〇〇4) plane of the tetragonal system is larger than the (10)4) plane of the cubic system. The diffraction intensity of the tetragonal (4) _) plane is smaller than the case where the cubic crystal (4) (10) 4) plane is L: 〇 3 feet. 'x: The case where X5R is not satisfied. ## The insulation resistance is based on the insertion of E between the mantissa portion and the index portion. The index symbol indicates. 97111695 53 200904774 [Table 21] Crystalline particle _ _ _ _ _ _ _ high temperature negative (170eC '30V) trial long rate diffraction pattern of 5 grade Yulin dielectric miscellaneous (25 ° 〇 dielectric loss (25 〇〇 (3.15V///m) 02. δν/,ωη) Dielectric special |± JUID %_ — % Ω Ω Delete X7Rrn 71 2-79 0. 35 350 1.7 4200 14 5. 2Ε+08 5.4Ε+08 2 -80 0.35 350 1.7 4200 14 5. 2Ε+08 5.4Ε+08 〇〇------- 69 2-81 0. 33 330 1.6 3900 14 5. 2Ε+08 5.4Ε+08 〇〇68 2- 82 0. 32 320 1.6 3900 15 5. 2Ε+08 5. 4Ε+08 〇〇64 2-83 0.32 320 1.6 3900 16 5. 2Ε+08 5.4Ε+08 〇〇62 2-84 0. 32 320 1.6 3850 17 5. 2Ε+08 5.4Ε+08 〇〇45 2-85 0.31 310 1.6 3750 19 5. 2Ε+08 5. 4Ε+08 〇〇33 2-86 0.45 450 1.7 4700 11 7.1Ε+08 7.1Ε+08 X 55 ' 2-87 0.45 450 1.7 4700 11 7.1Ε+08 7.1Ε+08 〇X 55 2-88 0.42 420 1.6 4470 12 7.1Ε+08 7.1Ε+08 〇X 54 2-89 0.42 420 1.6 4430 12 7.1 Ε+08 7.1Ε+08 〇X 54 2-90 0.42 420 1.8 4410 13 7.1Ε+08 7.1Ε+08 〇X 53 2-91 0.42 420 1.6 4400 13 7.1Ε+08 7.1Ε+08 〇X 43~~ ~ 2-92 | Too: il 吏 0.41 士 · τ 士 410 曰 each from rn 1.6 kh 4390 15 Swift helmet lv 7. 0 Ε +08 7. 0 Ε +08 〇 X 30 when Ixt / Ixc ratio. ** ** * Xc Γ • 1 The value indicates that the diffraction intensity of the (004) plane of the tetragonal system is greater than the (004) plane of the cubic system. The value of the comparison of Ixt/Ixc is less than 1, which means that the (004) plane of the tetragonal system is wound. The incident intensity is smaller than the diffraction intensity indicating the (004) plane of the cubic crystal system. &lt;# :〇: When X5R is satisfied, X: X5R is not satisfied. Lin* :〇: X7R is satisfied, X: X7R is not satisfied. ##Insulation resistance is between the mantissa and the index. Insert the exponential notation of E. From the results shown in Tables 10 to 21, it is known that "the Yb2〇3 conversion meter contains 〇. 35 莫 s material No. 2-1 to 78' can be obtained with and without the composition of the mirror. Sample No. 1-1 to 10, 12 to 16, 18 to 34, 36 to 40, 42 to 44, 46, 47, 52 to 65, 68 to 78, and 80 to 90 were respectively graded. Further, in the sample No. 2-79 to 85, the conversion γ!). The conversion meter contains 0. 3 to 0. 6 moles of sample No. 2-81 to 83 'the firing temperature is higher than the example The dielectric ceramic firing temperature of sample No. 1-30 shown in Fig. 1 was 4 高 higher. (:, However, it still has characteristics similar to those of the dielectric ceramics of the sample No. 1-30 shown in the first embodiment. 54 97111695 200904774 Furthermore, in the sample No. 2-86 to 92, the conversion Yb2〇3 The conversion meter contains 0. 3~0·6 moles of sample No. 2 to 88 to 90, and the firing temperature is 4 〇t higher than the dielectric ceramic firing temperature of the sample No. However, it still has the characteristics of substantially the same level as the dielectric ceramic of the sample N〇. _69 shown in Example 1. From this, it is known from the dielectric ceramics of the sample N〇. 2_8, 83, 88 to 9 〇. By using 〇·3~〇6mol according to Yb2〇3 conversion, the dielectric properties of dielectric ceramics can be reduced even if the firing temperature is changed within 4 (the range of TC) (dielectric constant, BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a micro-structure of a dielectric ceramic of the present invention. Fig. 2 (a) is an X-ray diffraction pattern of a sample of a dielectric ceramic of the present invention; (b) is a cross-sectional view of a sample of a comparative dielectric dilator, N 〇. 5丨. Fig. 3 is a schematic cross-sectional view showing an example of a multilayer ceramic capacitor of the present invention. Ming] 1 'la' lb grain boundary phase crystal particles external electrode 4 5 7 dielectric layer 10 of the capacitor internal electrode layer laminate body 10A 9711169555

Claims (1)

200904774 十、申請專利範園: 1. 一種介電陶瓷,係以鈦酸鋇八 該鈦酸鋇的鋇⑽料 :77,彳目對於構成 0 05〜0 3 H 今下含有··依ν2〇5換算計為 0.05 0.3莫耳之鈒、依_ MnO換算計為〇〜〇 5莫耳 莫耳之鎂、依 0 4〜1 5装且以及依_換算計為 U. 4 1. 5莫耳之從釔、鏑、鈦 素⑽), 及姆中選擇之1種稀土族元 Γ 更含有|弓,且 具有:由以上述鈦酸頷作為主體,且上述鈣 漢度在〇.2原子%以下的結晶粒子所構成之第1結 以及由以上述鈦酸鋇作為主 0/ IV , . ^ H 且上迹舞滚度在0.4原子 〇 乂上的,,、口日日粒子所構成之第2結晶 其中, ’ 該介電陶瓷的X射線繞射圖中 (_)面之繞射強度大於表矛:方曰:正方晶糸鈦酸鋇的 之繞射強度。 、 方日日系欽酸鎖的(400)面 2.如申請專利範圍第丨 忐μ m π , ;丨电闹是,其中,相對於構 成上述鈦酸鋇的鋇1〇〇莫耳之 A η η ! h 关今《下係含有:依MgO換算計 以莫耳之上述鎮、依_換算計為0〜0.5莫耳之上 ^^及依他⑴換算計為㈠〜以莫耳之從心銷、 及斜中選擇之1種上述稀土族元素⑽)。 3·如申請專利範圍第2 有量依Mg〇換算計係〇莫耳電陶光,其中,上述鎮含 4.如申請專利範圍第3項之介電陶究,其中,上述猛含 97111695 56 200904774 有量依MnO換算計係〇莫耳。 5_如申請專利範圍第1項之介電陶究,其中,相對於構 成上述鈦酸鋇的鋇_莫耳之下,含有U5換算計為 0.1〜0.3莫耳之上述釩、依Mg0換算計為〇 3 〇 9莫耳之 上述錶、依Mno換算計為〇 〇5〜〇.5莫耳之上述鐘,以及 依祕換算計為〇.4〜〇9莫耳之從纪、鋼、欽及斜 6如申請專利範圍第…項中任一項之介電陶究,盆 於構成上述鈦酸鋇的鋇100莫耳之下,係更含有 依祕換算料〇.3莫耳口㈣圍内之錢下。係更3有 中明專利範圍第1至5項中任-項之介電陶瓷,其 ,目、於構成上述鈦酸鋇的鋇100莫耳之下’係更入有 依齡換算計為u莫耳以下的範圍内之^係更3有 8.種積層陶究電容器,其特徵在於:由申 &quot;員之介電陶瓷構成的介電質層與 J 體所構成。 1电極層的積層 97111695 57200904774 X. Application for patent garden: 1. A dielectric ceramic, which is made of barium titanate bismuth (10) material: 77, which is for the composition 0 05~0 3 H. 5 conversion is calculated as 0.05 0.3 m, 依 Mn 换算 换算 换算 〇 〇 〇 〇 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫 莫The rare earth element 选择 selected from the group consisting of yttrium, lanthanum, titanium (10), and yam further contains | bow, and has: the above-mentioned barium titanate as the main body, and the above-mentioned calcium han is at 原子. 2 atom% The first knot composed of the following crystal particles and the first one composed of the above-mentioned day and day particles with the above-mentioned barium titanate as the main 0/IV, . ^ H and the upper roll rolling degree of 0.4 atomic enthalpy 2 crystallization, where the diffraction intensity of the (_) plane in the X-ray diffraction pattern of the dielectric ceramic is greater than that of the table spear: square: the diffraction intensity of the tetragonal barium titanate. (40) face of the Japanese-Japanese-Japanese-Korean lock 2. If the scope of the patent application is 丨忐μ m π , 丨 丨 是 , , , , , , , , , , , 相对 相对 相对 相对 相对 相对 相对 相对 相对η ! h Guan Xiu "The following system contains: according to the MgO conversion, the above-mentioned town of Moh, according to _ conversion is 0~0.5 m above ^^ and according to his (1) conversion (a) ~ with Mo's heart One of the above-mentioned rare earth elements (10) selected from the pin and the oblique. 3. If the scope of the patent application is 2, the amount of the meter is calculated according to the meter, and the above-mentioned town contains 4. The dielectric ceramics according to item 3 of the patent application scope, wherein the above-mentioned fierce contains 9711695 56 200904774 The quantity is measured in terms of MnO. 5 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ For the above table of 〇3 〇9 Mo, the above clock according to Mno conversion is 〇〇5~〇.5 Mo, and the calculation according to the secret is 〇.4~〇9莫耳之纪,钢,钦And oblique 6 as the dielectric chemistry of any one of the scopes of the patent application, the basin is under the 钡100 构成 constituting the above-mentioned barium titanate, and the system further contains the 换算.3 Mo ear (four) circumference. Under the money. A dielectric ceramic according to any one of the first to fifth aspects of the patent scope of the present invention, which has a U.S. In the range below Moher, there are 8. multilayered ceramic capacitors, which are characterized by a dielectric layer composed of a dielectric ceramic of Shen &quot; and a J body. 1 electrode layer laminate 97111695 57
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