TW200903866A - Glass coated light emitting element, illuminator and projector - Google Patents

Glass coated light emitting element, illuminator and projector Download PDF

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Publication number
TW200903866A
TW200903866A TW097118190A TW97118190A TW200903866A TW 200903866 A TW200903866 A TW 200903866A TW 097118190 A TW097118190 A TW 097118190A TW 97118190 A TW97118190 A TW 97118190A TW 200903866 A TW200903866 A TW 200903866A
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Taiwan
Prior art keywords
light
glass
emitting element
emitting
coated
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TW097118190A
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Chinese (zh)
Inventor
Nobuhiro Nakamura
Minoru Sekine
Syuji Matsumoto
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Asahi Glass Co Ltd
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Publication of TW200903866A publication Critical patent/TW200903866A/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/49105Connecting at different heights
    • H01L2224/49107Connecting at different heights on the semiconductor or solid-state body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
  • Led Device Packages (AREA)

Abstract

A glass coated light emitting device in which the emission light from a semiconductor light emitting element can be introduced efficiently into an optical control section, alignment of a lens and the light emitting element is not required, and the emission light from the semiconductor light emitting element can be taken out and utilized efficiently.; The glass coated light emitting device comprises a semiconductor light emitting element (1) mounted on the surface of a substrate and emitting light in a predetermined wavelength band from a light emitting region, a glass (2) having a part of a spherical surface wider than the hemispherical surface as the light emitting surface, integrated to cover the light emitting region of the semiconductor light emitting element (1) under a state the surface other than the spherical surface arranged facing the semiconductor light emitting element (1) and having a refractive index of 1.7 or above at the emission peak wavelength and the maximum diameter ratio of the substrate surface of semiconductor light emitting element to its diameter being 1.8 or above, and a bonding face (2A), i.e. a light scattering portion, for refracting the light existing in the glass (2) without exiting the surface thereof.

Description

200903866 九、發明說明: 【發明所屬之技術領域】 本發明係關於藉由玻璃所被覆之半導體發光元, 之係關於經玻璃被覆之發光元件、照明裝置及投影裴置 【先前技術】 由發光二極體(LED,· Light Emitting Diode)所代表之半 導體發光元件係具有小型、高效率、使用壽命長等特徵, 並使用於各種用途。例如若將LED使用於投影光源,由於 LED甚小型,可將照明系統微型化,但另一方面因來、 LED之射出光無指向性’因此必須將射出光效率良好地^ 入液晶面板、微鏡陣列等之光控制部。 以往’為了將該類射出光效率良好地導入光控制 用將附透鏡發光元件亦即將個別製作為具有因應 放射角或強度分布之各種透鏡,經由金屬等之保持器對齊 於LED等發光兀件之位置,並予以調整固定者。 類以往之附透鏡發光元件係發光元件、透鏡及 件零件成為一套,且亦需要該等零 費用甚面。而且,亦具有若為通常 之透鏡形狀,其放射強度分 、 刀布未必效率良好之問題。 為了解決該類問題,已提案一 (參者直4,丨禋使用先導官之照明系統 (麥考專利文獻1)。於該類 ^ 透鏡發# _ 4 „ …、月糸統中’相較於使用前述附 還鏡么先兀件之情況’據判 光導營盘旅丄 又刀布之政率良好,作 先導Β與^元件或光控㈣之位置㈣ 一 解決前述問題。 、 仍不足以 131543.doc 200903866 [專利文獻1]日本特表2〇〇6·5〇583〇號公報 【發明内容】 [發明所欲解決之問題] 本發明之目的在於提供—種可效率良好地將來自半導體 發光元件之射出光導入前述光控制部,且透鏡或光導管與 發光几件之位置不需如前述般對準,並且可有效率地取出 來自半導體發光元件m,來作為發光用之光以供利 用之經玻璃被覆之發光元件、照明I置及投影裝置。 [解決問題之技術手段] 本發明係提供一種經玻璃被覆之發光元件,其具備:半 導體發光元件;玻璃,其具有將自該半導體發光:件所射 出之光射出之表面,絲面為财球面寬廣之球形,於一 部分具有截球部,且於前述截球部安裝於前述半導體發光 元件,前述半導體發光元件之發料值波長之折射^為 1.7以上,前述截球部之最大徑相對於直徑之比至少為I; 以上;及缝射部,其係使未從前述玻璃之前述表面射出 而存在於前述玻璃内部之光折射者。 而且,本發明亦提供—種具備冑述經玻璃被Μ 件及像場透鏡(field lens)之照明裝置,及具有該照明裝置 作為光源之投影裝置。 [發明之效] 若根據本發明,由於被覆玻璃具有與前述透鏡或光導管 同樣之作用,目此位置不需如先前述般對準。亦即,由二 以往使用透鏡來提高指向性之情況時,必須將半導體發光 131543.doc 200903866 元件與透鏡個別配置 但本發明不需要該類 ’因此必須將其等之位 位置對準。 置予以對準 而且’於本發明中, ,) 主.5? T a, ^ ^ ^ ^ 70件射入於球狀玻螭之 b況下,玻璃與外部办裔 ’之 夕Μ χ &由 界面(以下稱為「玻璃界面」) 之射入角度超過臨界角之情 半導體發光元件之Μ面全反射而再度回到 料…〜 U面’但由於光散射部之散射,光路 璃界面之全反射條件,可使其從玻璃射出。 因此’若根據本發明,可將來自半導體發光元件之射出光 有效率地取出作為發光用之光,並以增大後之光量(使被 照射面以所需之照射圖案)照亮。 【實施方式】 、下參考附圖來s羊細說明關於本發明之實施型態。 (第一實施型態) 圖1係表示關於本發明之第一實施型態之經玻璃被覆之 發光元件(第一發光元件)之結構之剖面圖。該經玻璃被覆 之發光元件1〇具備半導體發光元件丨及玻璃2,並配置於布 線基板3上。而且,於該經玻璃被覆之發光元件1〇之玻璃2 之與半導體發光元件1之接合面2A,施加有細小凹凸所組 成之微細加工。該微細加工(光散射部)係使從半導體發光 元件1射出並於玻璃2内之球面進行全反射並返回之光散 射。該微細加工係利用例如喷砂、蝕刻等破壞玻璃2之接 合面2A而形成。 半導體發光元件(發光元件)1係從具有發光區域之面(以 下稱為發光面)’ 2維地射出特定波長帶區之光,並安裝於 131543.doc 200903866 布線基板3上。於此,利用圖2來說明關於發光元件丨之結 構。發光元件1具有:透明基板14、形成於透明基板14上 之η層12、形成於n層12上之發光層13及形成於發光層。上 之ρ層u。於?層11及11層12上設有電極1Α、1Β。發光元件 1係所謂覆晶安裝。電極1A、1Β係經由凸塊33來連接於布 線基板3之布線圖案32。 於第一實施型態,發光元件丨之發光面為透明基板丨4之 背面(與玻璃2之接合面2Α相對向之面)。於發光層13產生 之光係往圖2(A)之箭頭Α方向行進,並經由透明基板丨斗射 出。電極ΙΑ、1B亦具有作為用以使未於玻璃2之表面進行 全反射並從玻璃2之表面射出至外部,而返回電極1A、ib 之光反射之鏡之功能。於第一實施型態’作為發光元件i 係利用藍色LED來說明’但當然其他色之led、雷射二極 體等亦可。 發光元件1從上方看來一般為長方形或正方形。作為發 光元件1之發光面之透明基板14之背面為長方形或正方形 均可。由於從發光層13發生之光係經由透明基板14而從發 光元件1射出,因此透明基板14之背面可視為發光元件1之 發光區域。然後,該發光區域係與電極之形狀(以圖2(b)之 斜線所示之區域)相似。因此,為了獲得所需之投影形 狀’將電極形狀製成所需之投影形狀即可。如後述,本發 明之玻璃係指向性良好。換言之,可將射入之光大致作為 原樣之形狀來投影至外部。總言之,本發明之經玻璃被覆 之發光元件之發光面可製成配合所需之投影面之發光面。 131543.doc 200903866 照射有該發光面之形狀 照亮具有各種形狀圖 。藉 案之 方形或正方 1典型上為 例如發光面製成矩形或圓形, 此’對於被照射面,可照射. 光’可擴大照明光源之應用。 此外,從上方看來之發光元件1之形狀為長 形之情況時,其最大徑L為對角線之長度, 40〇〜1500 μηι 0 玻璃2被覆發光元件1。該表面具錢半心^之球面 之一部分,其為球形(以下稱為「球狀玻璃」卜由於為該 類形狀,因此第-實施型態之經玻璃被覆之發光元件^ 升射出光之指向性及均一性兩者。球狀玻璃2係於與發光 元件1之接合面(於第一實施型態為相當於接合面2Α之部 分)被切斷球之形狀,該球被切斷之部分稱為截球(截球部 2C ;參考圖7(B)及圖8)。 作為球狀玻璃2,例如以氧化物基準之莫耳%表示,使 用本質上由Te02為40〜53%、Ge02為〇〜1〇。/0、β2〇3為 5〜30%、Ga203 為 〇〜10%、Bi2〇3 為 〇〜1〇%、Ζη〇為 3〜2〇%、 Υ2〇3 為 0〜3%、La2〇3 為 〇〜3%、Gd2〇3 為 〇〜7% ' Ta2〇3 為 〇〜5%所組成之玻璃。該玻璃亦可於不損及本發明目的之 範圍内,含有上述成分以外之成分,但該情況下,該類成 分之含有量在合計上宜為10%以下,更宜為5%以下。於 此’例如「Ge〇2為〇〜1〇%」係意指&〇2並非必須,但亦可 含有達10%。 發光元件1之發光峰值波長λρ之球狀玻璃2之折射率np為 1.7以上。若小於1.7 ’後述之最大照度或照度分布會變 131543.doc -10· 200903866200903866 IX. Description of the Invention: [Technical Field] The present invention relates to a semiconductor light-emitting element coated with glass, relating to a glass-coated light-emitting element, an illumination device, and a projection device. [Prior Art] A semiconductor light-emitting element represented by a polar body (LED, Light Emitting Diode) has characteristics such as small size, high efficiency, and long service life, and is used for various purposes. For example, if an LED is used for a projection light source, the LED can be miniaturized, and the illumination system can be miniaturized. On the other hand, since the LED emits light without directivity, it is necessary to efficiently emit the light into the liquid crystal panel and micro A light control unit such as a mirror array. Conventionally, in order to efficiently introduce such light-emitting light into light control, the lens light-emitting elements are individually produced into various lenses having a radiation angle or intensity distribution, and are aligned with light-emitting elements such as LEDs via a holder such as a metal. Position and adjust the fixer. The conventional lens-attached light-emitting elements are a set of light-emitting elements, lenses, and parts, and these zero-costs are also required. Further, in the case of a normal lens shape, the radiation intensity and the blade are not necessarily efficient. In order to solve this kind of problem, one has been proposed (Reference 4, 丨禋 use the lighting system of the pilot (McCook Patent Document 1). In this type of lens, # _ 4 „ ..., 糸 中In the case of using the above-mentioned attached mirror, it is judged that the light guide battalion has a good political rate, and the position of the pilot and the component or the light control (4) (4) solves the aforementioned problems. [Patent Document 1] Japanese Patent Application Laid-Open No. Hei. No. Hei. No. 5, No. 5, 583, 【 发明 【 【 【 【 【 【 【 【 【 【 【 【 【 【 ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] The light emitted from the light-emitting element is introduced into the light control unit, and the position of the lens or the light guide and the light-emitting elements need not be aligned as described above, and the semiconductor light-emitting element m can be efficiently taken out as light for illumination. A glass-coated light-emitting element, an illumination I, and a projection device are used. [Technical Solution to Problem] The present invention provides a glass-coated light-emitting element comprising: a semiconductor light-emitting element; and glass having Conductor illuminating: a surface on which the light emitted by the member is emitted, the surface of the filament is a spherical shape having a wide spherical surface, and a portion having a spheroidal portion, and the spheroidal portion is attached to the semiconductor illuminating element, and the wavelength of the semiconductor illuminating element is emitted. The refractive index is 1.7 or more, and the ratio of the maximum diameter of the ball-cutting portion to the diameter is at least I; or more; and the slitting portion is a light refraction which is present in the glass without being emitted from the surface of the glass Furthermore, the present invention also provides an illumination device having a glass cover member and a field lens, and a projection device having the illumination device as a light source. [Effect of the Invention] According to the present invention Since the coated glass has the same function as the lens or the light guide, the position does not need to be aligned as described above. That is, when the lens is used to improve the directivity, the semiconductor light must be illuminated 131543.doc. 200903866 The components are individually arranged with the lens but the invention does not require this type 'therefore must be aligned with their position. Aligned and 'in the present invention中, ,) 主.5? T a, ^ ^ ^ ^ 70 pieces are injected into the spherical glassy b, the glass and the external office's Μ χ & interface (hereinafter referred to as "glass interface" ") The incident angle exceeds the critical angle. The semiconductor light-emitting element is totally reflected and returned to the material...~U-face" but due to the scattering of the light-scattering portion, the total reflection condition of the light-path glass interface can be made from glass. Shoot out. Therefore, according to the present invention, the light emitted from the semiconductor light-emitting element can be efficiently taken out as light for light emission, and the increased light amount (the irradiated surface can be illuminated with a desired irradiation pattern). [Embodiment] Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings. (First embodiment) Fig. 1 is a cross-sectional view showing the structure of a glass-coated light-emitting element (first light-emitting element) according to a first embodiment of the present invention. The glass-coated light-emitting device 1A includes a semiconductor light-emitting device 丨 and a glass 2, and is disposed on the wiring substrate 3. Further, fine processing of fine concavities and convexities is applied to the bonding surface 2A of the glass-coated light-emitting element 1 and the semiconductor light-emitting element 1 to the bonding surface 2A. This fine processing (light-scattering portion) scatters light that is emitted from the semiconductor light-emitting element 1 and totally reflected by the spherical surface in the glass 2 and returned. This microfabrication is formed by breaking the joint surface 2A of the glass 2 by, for example, sand blasting or etching. The semiconductor light-emitting element (light-emitting element) 1 emits light of a specific wavelength band two-dimensionally from a surface having a light-emitting region (hereinafter referred to as a light-emitting surface), and is mounted on a wiring substrate 3 of 131543.doc 200903866. Here, the structure of the light-emitting element 丨 will be described using Fig. 2 . The light-emitting element 1 has a transparent substrate 14, an n layer 12 formed on the transparent substrate 14, a light-emitting layer 13 formed on the n-layer 12, and a light-emitting layer. The upper layer ρ layer u. to? Electrodes 1Α and 1Β are provided on the layers 11 and 11 12 . The light-emitting element 1 is a so-called flip chip mounting. The electrodes 1A and 1B are connected to the wiring pattern 32 of the wiring board 3 via the bumps 33. In the first embodiment, the light-emitting surface of the light-emitting element 为 is the back surface of the transparent substrate 丨 4 (the surface opposite to the bonding surface 2 玻璃 of the glass 2). The light generated in the light-emitting layer 13 travels in the direction of the arrow 图 of Fig. 2(A) and is emitted through the transparent substrate hopper. The electrode ΙΑ, 1B also functions as a mirror for reflecting light which is not totally reflected on the surface of the glass 2 and is emitted from the surface of the glass 2 to the outside, and returns to the electrodes 1A, ib. In the first embodiment, the light-emitting element i is described by a blue LED, but of course, other colors of led, laser diode or the like may be used. The light-emitting element 1 is generally rectangular or square in view from above. The back surface of the transparent substrate 14 as the light-emitting surface of the light-emitting element 1 may be rectangular or square. Since the light generated from the light-emitting layer 13 is emitted from the light-emitting element 1 via the transparent substrate 14, the back surface of the transparent substrate 14 can be regarded as the light-emitting region of the light-emitting element 1. Then, the light-emitting region is similar to the shape of the electrode (the region shown by the oblique line in Fig. 2(b)). Therefore, in order to obtain the desired projection shape, the electrode shape can be made into a desired projection shape. As will be described later, the glass of the present invention has good directivity. In other words, the incident light can be projected to the outside as it is. In summary, the light-emitting surface of the glass-coated light-emitting element of the present invention can be made to match the light-emitting surface of the projection surface required. 131543.doc 200903866 The shape of the illuminated surface is illuminated to illuminate a variety of shapes. The square or square 1 of the borrowing is typically made of, for example, a light-emitting surface made of a rectangle or a circle, and this 'for the illuminated surface, the light can be illuminated. The application of the illumination source can be expanded. Further, when the shape of the light-emitting element 1 from the top is an elongated shape, the maximum diameter L is the length of the diagonal line, and the glass 2 covers the light-emitting element 1 from 40 Å to 1500 μm. This surface has a spherical half-hearted spherical portion (hereinafter referred to as "spherical glass". Because of this type of shape, the glass-coated light-emitting element of the first embodiment has a light-emitting direction. Both the property and the uniformity. The spherical glass 2 is formed in a shape in which the ball is cut by the joint surface with the light-emitting element 1 (the portion corresponding to the joint surface 2Α in the first embodiment), and the ball is cut. It is called a ball (the ball portion 2C; see Fig. 7(B) and Fig. 8). As the spherical glass 2, for example, it is represented by the mole % of the oxide, and the use is essentially 40 to 53% of Te02, Ge02. 〇~1〇./0, β2〇3 is 5~30%, Ga203 is 〇~10%, Bi2〇3 is 〇~1〇%, Ζη〇 is 3~2〇%, Υ2〇3 is 0~ 3%, La2〇3 is 〇~3%, Gd2〇3 is 〇~7% 'Ta2〇3 is 〇~5% glass. The glass may also be included within the scope of the present invention without damaging the purpose of the present invention. In addition, the content of such a component is preferably 10% or less, and more preferably 5% or less, in which case, for example, "Ge〇2 is 〇~1〇%". Means & 〇2 is not required, but may be up to 10%. The refractive index np of the spherical glass 2 of the light-emitting peak wavelength λρ of the light-emitting element 1 is 1.7 or more. If it is less than 1.7', the maximum illuminance or illuminance distribution described later may become 131543. .doc -10· 200903866

小。且為1 · 8以上,更宜為1 q丨、;L 上。而且、典型上為2.3 下。此外,λρ在藍色LED為450〜彻_,特言 之,一般為450〜460㈣。而且’發光元件i不限定於藍: led,可使用射出各種时波長或特定波長帶區之光者。 球狀玻璃2之球面之直徑設為d,截球部之直徑設 机(截球比;截球部之最大徑相對於直徑之比)至少為u 以上,宜為1.8〜3·5(此外,d係等於圖7(B)所示之球狀玻璃 2之截球部2C之水平方向寬度之最大值)。 若根據本發明者等事先所進行之實驗,最大照度宜為 3Xl〇_5以上’照度分布宜為〇.35以上。該實驗之球狀玻璃 不具有光散射構件’但關於敎結果未有任何影響。具體 而言’於光源前方,亦即於射出光側配置受光面,計算該 受光面之照度。來自發光元件之射出光線係對於射出光側 空間之全⑽度方向,呈無指向性 '非相干性,關於射出 先線之折射、反射,按照折射•反射之定律(司乃耳定们 來計算。而且,光源全強度規格化為】mw,射出光線數 設定全部為1〇〇萬條來計算。此外1光源全強度規柊化 為i mW而計算係僅為了方便而如此設定,本發明不限定 於此m計算不考慮偏光’多重反射所造成之光線 強度降低係至0.0001%為止有效。 L設為i mm,受光面設為丨邊15 mm之正方 J mm、4 mm, 亦即d/L為1(球狀玻璃為半球之情況)、2、3、 ΐ月況,計 算從球狀玻璃構成其_部分時之球面之受光面最遠離之點 131543.doc 200903866 與受光面之距離設定成 度。 m坊之情況下之受光面之照 從藉由計算所獲得之昭戶& 日刀厗八古/ 、、又β取最大照度(單位:mW)及 知、度分布(早位:%)。於 示結果。 (取大照度)及表2(照度分布)表 二,:度分布如下讀取。亦即,求出受光面上之有效 被照射之B之橫向長度认照度為上述最大照度之嶋以 上之橫向長度b,將b/a作為照度分布。 na ^ v 叩 d—1 mm之照度分布 係由於有效被照射之部分較受光 权又尤面見廣,因此無法讀取。 於圖3⑷〜圖3(D)、圖4⑷〜圖4(D)表示藉由以上計算所 獲得之光量分布。根據各圖中圓滑晝出之曲線來讀出〜為 1.5及2.0時之d為2 mm、3 mm、4 _,亦即机為2、3、* 之情況下之前述照度分布。亦一併表示讀 汽取之輔助線。 [表1] d(mm) np=1.5 ηρ=1.75 Πρ-Ζ.Ο ηρ=2.25 1 1.7χ10'5 1.4χ10'5 1.3 χΐ〇'5 Ι.ΙχΙΟ'5 2 9.9xl0'5 7·1χ1〇-5 "ίΐχίο^^ 4.5 χ10'5 3 1.5χ10'4 1.9x10-4 1.3 χΤ〇^ Ι.ΙχΙΟ'4 4 1.6xl0'4 3.9Χ10'4 2.9x1 〇'4 2.2χ10'4 131543.doc 12- 200903866 [表2]small. And it is 1 · 8 or more, more preferably 1 q丨,; L. And, typically, it is 2.3. Further, λρ is 450 to _ in the blue LED, and in particular, it is generally 450 to 460 (four). Further, the 'light-emitting element i' is not limited to blue: led, and it is possible to use light that emits various wavelengths or bands of a specific wavelength. The diameter of the spherical surface of the spherical glass 2 is set to d, and the diameter of the ball-cutting portion is set to be a machine (the ratio of the intercepting ball; the ratio of the maximum diameter of the ball-cutting portion to the diameter) is at least u or more, preferably 1.8 to 3·5 (otherwise d is equal to the maximum value of the horizontal width of the ball-cutting portion 2C of the spherical glass 2 shown in Fig. 7(B). According to experiments conducted by the inventors of the present invention in advance, the maximum illuminance is preferably 3 × 10 〇 _ 5 or more. The illuminance distribution is preferably 〇.35 or more. The spherical glass of this experiment did not have a light scattering member' but had no effect on the enthalpy results. Specifically, the illuminance of the light-receiving surface is calculated in front of the light source, that is, the light-receiving surface is disposed on the light-emitting side. The emitted light from the light-emitting element is non-coherent in the direction of the full (10) degree of the light-emitting side space, and the refraction and reflection of the exit line are calculated according to the law of refraction and reflection. Moreover, the full intensity of the light source is normalized to mw, and the number of emitted rays is set to be 100,000. In addition, the full intensity of the light source is i mW and the calculation is set for convenience only, and the present invention does not It is limited to this m calculation without considering the polarization reduction caused by the multi-reflection to be 0.0001%. L is set to i mm, the light-receiving surface is set to the square of 15 mm, J mm, 4 mm, that is, d/ L is 1 (the case where the spherical glass is a hemisphere), 2, 3, and the month of the moon. The distance from the light-receiving surface of the spherical surface when the spheroidal glass is formed is calculated. 131543.doc 200903866 Distance setting with the light-receiving surface In the case of the m-square, the light-receiving picture is obtained from the calculation of the Zhaohu & Japanese Knife, Ba Gu/, and β, the maximum illumination (unit: mW) and the knowledge distribution (early position) :%). Show results. (take large illumination) Table 2 (illuminance distribution) Table 2: The degree distribution is read as follows. That is, the lateral length illuminance of the B that is effectively irradiated on the light-receiving surface is obtained as the lateral length b above the maximum illuminance, b/ a is used as the illuminance distribution. The illuminance distribution of na ^ v 叩d - 1 mm is unreadable because the part that is effectively illuminated is more widely affected by light weight. Figure 3 (4) ~ Figure 3 (D), Figure 4 (4) ~ Fig. 4(D) shows the light quantity distribution obtained by the above calculation. According to the curve of the rounded curve in each figure, the d is 1.5 mm and the d is 2 mm, 3 mm, 4 _, which is the machine The illuminance distribution in the case of 2, 3, and * also indicates the auxiliary line for reading the steam. [Table 1] d(mm) np=1.5 ηρ=1.75 Πρ-Ζ.Ο ηρ=2.25 1 1.7χ10' 5 1.4χ10'5 1.3 χΐ〇'5 Ι.ΙχΙΟ'5 2 9.9xl0'5 7·1χ1〇-5 "ίΐχίο^^ 4.5 χ10'5 3 1.5χ10'4 1.9x10-4 1.3 χΤ〇^ Ι. ΙχΙΟ'4 4 1.6xl0'4 3.9Χ10'4 2.9x1 〇'4 2.2χ10'4 131543.doc 12- 200903866 [Table 2]

d(mm) np=1.5 =1.75 2 3 0.29 0.34 0.34 0.54 0.48 0.31 最大照度宜為3><l〇-5以 如先前所述’ np小於1 7時 np=2.〇 ------ np=2.25 — 0.68 --- 0.50 0.71 0.77 0.62 ----- 0.70 ,照度分布宜為〇·35以上。亦 最大照度或照度分布小。d/L 小於1·8時,最大照度或照度分布小,若超過]5,則最大 照度或照度分布可能變小。宜為2〇〜3 2。 球狀玻璃2不僅被覆發光元件!之上面(透明基板Μ之背 面),亦且被覆側面(透明基板14、〇層12及發光層13之側 面)。藉由球狀玻璃2被覆發光元件〖之側面,可將從發光 元件1之側面漏洩至外部之光朝所需方向(圖2(A)之箭頭A 方向)射出,可提升射出光之利用效率。此外,球狀玻璃2 當然亦可被覆半導體發光元件1之電極1 A、1 b之側面。d(mm) np=1.5 =1.75 2 3 0.29 0.34 0.34 0.54 0.48 0.31 The maximum illuminance is preferably 3<l〇-5 as described previously when 'np is less than 17 7n np=2.〇----- - np=2.25 — 0.68 --- 0.50 0.71 0.77 0.62 ----- 0.70 , the illuminance distribution should be 〇·35 or more. Also, the maximum illumination or illumination distribution is small. When d/L is less than 1·8, the maximum illuminance or illuminance distribution is small. If it exceeds 5, the maximum illuminance or illuminance distribution may become small. It should be 2〇~3 2. The spherical glass 2 covers not only the upper surface of the light-emitting element but also the side surface (the side surface of the transparent substrate 14, the ruthenium layer 12, and the light-emitting layer 13). By covering the side surface of the light-emitting element with the spherical glass 2, light leaking from the side surface of the light-emitting element 1 to the outside can be emitted in a desired direction (direction of arrow A in Fig. 2(A)), and the utilization efficiency of the emitted light can be improved. . Further, the spherical glass 2 can of course be coated on the side faces of the electrodes 1 A, 1 b of the semiconductor light-emitting element 1.

如圖1所示,布線基板3具備:基板3丨,其係由例如鋁等 構成;及布線圖案32,其係於該基板3〗上,由使用糊狀物 所形成之Au布線或Ag布線、銅箔等所形成。 如圖1所示,經玻璃被覆之發光元件〗〇之電極1A、1 b係 經由金等之凸塊3 3而與布線基板3之布線圖案3 2電性地連 接。於圖1中,球狀玻璃2雖未與布線基板3接觸,但當然 亦可與布線基板3接觸。 如圖5(A)所示,於通常之LED等無指向性之發光元件 131543.doc 13 200903866 200 ’只要無光量分布均一化用之光學元件(積分透鏡等), 於準直儀201成為平行光之光束之光強度丨係按照餘弦4次 方定律(cos4ez)而成為中央部呈最大分布之常態分布(高 斯刀布)(參照圖6之d=l 〇2 mm之數據)。θζ係與射入準直儀 20 1 Vj之光線之光軸所成角度,Ιζ係從光源之某1點射出, 通過透鏡後到達被照明面内之全光線之強度分布,ΣΙζ係 從光源之全點射出並到達被照明面内之全光線之強度分 布。 另一方面,於本發明,如同圖(Β)所示,以設有作為光 散射部之接合面2Α之球狀玻璃2所被覆之經玻璃被覆之發 光疋件10,來構成該發光元件丨。藉此,即使將與以往同 樣具有無指向性之發光特性,即具有常態分布之發光特性 之通常之LED作為發光元件丨使用,於準直儀2〇1成為平行 光之光束之光強度I係光量分布大致被平均化(參照圖6之裸 晶(Barechip) ’㈣.55 _、d=〇.72咖之數據)。此係由於 有指向性之光源之情況時,即使通過球狀玻璃2内之角度 θζ大’於通過球狀玻璃2後會轉換為有指向性之細光束, 因此通過準直儀2〇1之光走之自庚莫戀 禾之角度差變小’由於僅通過4 個射出方向之準直備20〗夕 八 m , 千且儀201之一部分,因此因餘弦4次方定名 而降低之θζ會變小。 —m ίύ m (甲)關於以散射機構,使來自發光元件丨之射出光— 球狀玻璃2所全反射之返回光散射: 攸發光元件1射出之發光峰值油具》+ 尤穿值渡長λΡ之光,例如460 131543.doc -14- 200903866 之藍色光係於遍及發光元件1之後方昤冰4 万除外之射出光側空間 之約略全周360度之區域進行面發光。 、此剛射出後(球 狀玻璃1射入時)之照射圖案係如表示作為 ^α~Ί.〇2 mm 之線,大致對應於常態分布之中央為最大 且 < 山形。來 自該發光元件1之射出光係於射出後, 卜牙边空氣中並立 即行進於球狀玻璃2之内部,其後於穿透球狀破璃:時,僅 有對於與空氣之界面以全反射角(臨界角)以下所射入之光 線會往球狀玻璃2之外部射出。另一方面,對於盘处氣之 界面以全反射角以上所射入之光線係進行全反射=回接 合面2A。返回接合面2A之光係於光散射部之球狀破璃2之 接合面2A散射,其後變更光路。然後,成為以全反射角以 下之射入角度到達玻璃—空氣界面之光,並往外部射出。 (乙)關於藉由將作為光源之發光元件1之發光點A,,比球 狀玻璃2為真球之情況時之假想最後方點雄照射方向之前 :側:離,於穿透球狀玻璃2時,會往光束穿透球狀玻璃2 時所擴散之方向擴開: 例如假定如圖7(A)所示 、 』^視無截球部之球狀玻璃2,之 球面像差之無像差之近軸 ^ 杀件成立,右發光元件】之發光 點Α位於球狀玻璃21夕导依+ 後方點A,則射出球狀玻璃2,後之 光束係以平行弁击 。此外,實際上由於從發光點A出 4並從球狀破璃2,射出 、土 忐線係從球狀破璃2丨射出位置越 通光轴,其球面像差變得相+ ώ 欠仔越大,因此相較於無像差之情 況下之光線之行谁太A Α 丨月 °會朝向接近光轴之方向收傲。另 131543.doc 200903866 一方面’本發明之發光元件2係如同圖⑻所示由於將發 光點A,,比球狀破璃2之最As shown in FIG. 1, the wiring board 3 includes a substrate 3A made of, for example, aluminum or the like, and a wiring pattern 32 attached to the substrate 3, and an Au wiring formed by using a paste. Or formed by Ag wiring, copper foil, or the like. As shown in Fig. 1, the electrodes 1A and 1b of the glass-coated light-emitting device are electrically connected to the wiring pattern 3 2 of the wiring board 3 via bumps 3 such as gold. In Fig. 1, although the spherical glass 2 is not in contact with the wiring board 3, it is of course possible to come into contact with the wiring board 3. As shown in Fig. 5(A), an optical element (integral lens or the like) which is uniform in the absence of the light amount distribution in the light-emitting element 131543.doc 13 200903866 200' which is a non-directional light such as a normal LED is parallel to the collimator 201. The light intensity of the beam of light is the normal distribution (Gaussian cloth) with the largest distribution at the center according to the cosine fourth law (cos4ez) (refer to the data of d=l 〇2 mm in Fig. 6). The θζ system is at an angle with the optical axis of the light incident on the collimator 20 1 Vj, and the Ιζ is emitted from a certain point of the light source, and passes through the lens to reach the intensity distribution of the total light in the illuminated surface, and the 从 is from the light source. The intensity distribution of all rays that are emitted at all points and reaches the illuminated surface. On the other hand, in the present invention, as shown in Fig. 3, the light-emitting element 10 is formed by a glass-coated light-emitting element 10 covered with a spherical glass 2 as a bonding surface of the light-scattering portion. . Therefore, even if a normal LED having a non-directional light emission characteristic as in the related art, that is, a normal LED having a normal distribution light emission characteristic is used as the light-emitting element, the collimator 2〇1 becomes the light intensity I of the beam of the parallel light. The light amount distribution is roughly averaged (refer to the data of Barechip '(4).55 _, d=〇.72 coffee) in Fig. 6. In the case of a directional light source, even if it passes through the spherical glass 2, it will be converted into a directional light beam after passing through the spherical glass 2, so that it passes through the collimator 2〇1. The angle difference between the light and the Geng Mo Love Wo is smaller. 'Because only the four injection directions are collimated, 20 〗 〖Eight m, one part of the meter is 201, so the θζ will be reduced due to the cosine 4th name. Become smaller. —m ύ ύ ( ( 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 关于 返回 关于 返回 关于The blue light of λ Ρ light, for example, 460 131543.doc -14- 200903866 is surface-emitting in a region of approximately 360 degrees of the entire circumference of the light-emitting side space except for the light-emitting element 1 . The illumination pattern immediately after the shot (when the spherical glass 1 is incident) is expressed as a line of ^α~Ί.〇2 mm, which corresponds to the center of the normal distribution and is the largest and <mountain shape. The light emitted from the light-emitting element 1 is emitted after the light is emitted, and immediately travels inside the spherical glass 2 in the air of the tooth, and then penetrates the spherical glass: only the interface with the air is completely Light incident below the reflection angle (critical angle) is emitted to the outside of the spherical glass 2. On the other hand, the light incident on the interface of the disk at the total reflection angle is totally reflected = the return surface 2A. The light returning to the joint surface 2A is scattered by the joint surface 2A of the spherical glass 2 of the light-scattering portion, and thereafter the optical path is changed. Then, the light reaches the glass-air interface at an angle of incidence below the total reflection angle, and is emitted to the outside. (b) About the illuminating point of the imaginary last point when the illuminating point A of the illuminating element 1 as the light source is the true spherical condition: side: away, penetrating the spherical glass At 2 o'clock, it will expand in the direction in which the beam penetrates the spherical glass 2: For example, as shown in Fig. 7(A), the spherical glass 2 without the intercepting portion is spherical. The near-axis of the aberration ^ The killing is established, and the light-emitting point of the right light-emitting element is located at the rear point A of the spherical glass 21, and then the spherical glass 2 is emitted, and the rear beam is slammed in parallel. In addition, in fact, since 4 is emitted from the light-emitting point A and the ball-shaped glass 2 is emitted, the ballast line is emitted from the spherical glass 2丨, and the spherical aberration becomes the same as the optical axis. The bigger, so the light travels compared to the absence of aberrations, who is too A Α 丨 ° ° will be close to the direction of the optical axis. Further, 131543.doc 200903866 On the one hand, the light-emitting element 2 of the present invention is as shown in Fig. 8 (8), since the light-emitting point A is the highest than the spherical glass 2

±丄+丄、 …、射方向之前方側(Z 軸方向)偏離,因此可賦予往光 果(以下稱為第一效果)。 '、叙方向擴開之效 (丙)關於在穿透球狀玻璃2時,藉由將折射率喊定為例 如1.7以上,可使光束往擴散方向擴開,或藉由將n設定為 例如2.2以下,可使光束往收斂方向縮窄: 一般而言’於包含通過兩面球透鏡之中心之光轴之剖面 内,若透鏡面半徑分別設為η、Γ2’球面透鏡之折射率設 為η’光軸方向之透鏡厚設&,則折射力(i/f; 點距離)係以式(1)表示。 為‘、、、 1 /f-[(n-1 )/γ] ] + [( 1 _n)/r2j …⑴ + [{(n-l)2d}/(n · r, · r2)] 於球面透鏡,ri=-r2=d/2。 關於如球狀玻璃2以平面切取球之一部分之形狀,亦即 截球形狀者,若球之一部分被切取側之半球之半徑,於此 為了方便而將此設為r,,則Γ|成為①,1/Γ|— 〇 ’因此式⑴ 成為以下式(2)。 r2=(l-n).f …(2) 然後,於充分符合近軸條件之理想情況下,η為2時會成 為Γ2 ^亦即焦點距離等於i*2,從透鏡之中心於r2之位置 放置物點之情況時,射出光成為平行光。 因此’於該類理想之情況下,若球狀玻璃2之折射率小 於2,則光束會擴散,若超過2,則光束會收斂,可賦予光 131543.doc -16- 200903866 束收斂之效果(以下稱為第二效果)。 (丁)關於由於球狀玻璃2之球面像差,於穿透球狀破璃2 時,發生抵銷(調整)前述(乙)、(丙)之效果之會聚方向之作 用: 如眾所周知’充分符合近軸條件之理想情況除外,如圖 8所示從光軸(Z)上之物點平行地行進之光一般係就垂直於 光軸(Z)之方向(X)而言’越是從光軸(z)遠離之物點之光, 越會發生比理想之焦點位置更近地成像之作用(球面像 差)。 因此’本發明係為了以該作用來取消前述第一、第二效 果之合算值,將球狀玻璃2之d/L及折射率Πρ設定為適當 值。亦即’本發明係為了將此具體實現而設定如下: a) 發光元件1之發光點八,比球狀玻璃2之最後方點a往照 射方向之前方側偏離;及 b) 作為球狀玻璃2係使用np為丨7以上,更宜使用 1·8〜2_2,典型上係使用1 9〜2 2者。 因此,若根據本實施型態,如圖 ’如圖9(A)所示,來自半導體±丄+丄, ..., the front side (Z-axis direction) of the shot direction is deviated, so it is possible to give the light (hereinafter referred to as the first effect). ', the effect of expanding in the direction of the direction (C), when the spherical glass 2 is penetrated, by setting the refractive index to, for example, 1.7 or more, the light beam can be expanded in the diffusion direction, or by setting n as, for example. 2.2 or less, the beam can be narrowed in the convergence direction: Generally, in the section including the optical axis passing through the center of the double-sided ball lens, if the lens surface radius is set to η, Γ 2', the refractive index of the spherical lens is set to η 'The lens thickness in the direction of the optical axis is &, and the refractive power (i/f; point distance) is expressed by the formula (1). Is ',,, 1 /f-[(n-1 )/γ] ] + [( 1 _n)/r2j ...(1) + [{(nl)2d}/(n · r, · r2)] for a spherical lens , ri=-r2=d/2. Regarding the shape in which the spherical glass 2 cuts out a part of the ball in a plane, that is, the shape of the cut ball, if one part of the ball is cut by the radius of the hemisphere on the side, this is set to r for convenience, and then Γ| becomes 1, 1 / Γ | - 〇 ' Therefore, the formula (1) becomes the following formula (2). R2=(ln).f (2) Then, in the ideal case of fully satisfying the paraxial condition, when η is 2, it becomes Γ2^, that is, the focal length is equal to i*2, and is placed from the center of the lens at the position of r2. In the case of an object point, the emitted light becomes parallel light. Therefore, in such an ideal case, if the refractive index of the spherical glass 2 is less than 2, the light beam will diffuse. If it exceeds 2, the light beam will converge, which can give the effect of beam convergence of 131543.doc -16-200903866 ( Hereinafter referred to as the second effect). (d) Regarding the spherical aberration of the spherical glass 2, when the spherical glass 2 is penetrated, the effect of the convergence direction (the adjustment) of the effects of the above (B) and (C) occurs: Except for the ideal case of paraxial conditions, the light traveling parallel from the object point on the optical axis (Z) as shown in Fig. 8 is generally perpendicular to the direction (X) of the optical axis (Z). The light whose optical axis (z) is far away from the object point, the more the imaging effect (spherical aberration) occurs closer than the ideal focus position. Therefore, the present invention sets the d/L of the spherical glass 2 and the refractive index Πρ to an appropriate value in order to cancel the combined value of the first and second effects by this action. That is, the present invention is set as follows in order to achieve this: a) the light-emitting point 8 of the light-emitting element 1 is deviated from the front side of the spherical glass 2 toward the front side of the irradiation direction; and b) as a spherical glass The 2 series uses np to be 丨7 or more, and more preferably 1·8 to 2_2, and typically 1 to 9 2 is used. Therefore, according to this embodiment, as shown in FIG. 9(A), the semiconductor is used.

域之光。然後,若 :射出,並返回半導體發光元件1之存在區 若根據本實施型態則具備光散射部。因 131543.doc 200903866 此,若由於全反射而返回發光元件丨附近之光射入於作為 光散射部之接合面2A(參考圖丨),則由於在該處折射,光 路會變化。因此,折射之返回光係於玻璃界面之全反射條 件被破壞,射入於球狀玻璃2之界面之射入角度涵蓋在臨 界角δ之範圍内,從而途經如同圖(B)之粗線箭頭b所示之 光路,並從球狀玻璃2射出。其結果,若根據第一實施型 態之經玻璃被覆之發光元件,可將迄今由於全反射而未往 玻璃外部射出之光,往玻璃外部射出,因此具有可使光量 增加之效果。 藉此,可實現取代以往之燈光源等之高亮度平行光源, 而且可將其照射面之形狀自由地設定為所需形狀。 (弟一實施型態) 接著’說明關於本發明之第二實施型態。此外,於本實 施型態,對於與第一實施型態之同一部分附上同一符號, 並避免重複說明。 圖1 〇係表示關於本發明之第二實施型態之經玻璃被覆之 發光元件(第二發光元件)20 ;於該經玻璃被覆之發光元件 2 〇 ’作為用以使從半導體發光元件1射出並於球狀玻璃2内 之球面進行全反射而返回之光散射之光散射部,取代於接 合面2A施以由細小凹凸所組成之微細加工,於球狀玻璃2 與半導體發光元件1間之空間2B,介裝由鋁所組成之許多 細小珠狀之作為光散射構件之填充物4,並且於介裝有該 等填充物4之狀態下,以UV接著劑一體地接合球狀玻璃2 與半導體發光元件1。於此,填充物之粒徑宜為1〇〇 0爪至 131543.doc -18- 200903866 200 nm程度。此係由於若過小,散射能力會降低,若過 大,每單位體積之散射能力會降低。然而,粒徑並未特別 限定。 因此’於本實施型態’來自半導體發光元件1之光亦行 進於球狀玻璃2内部,並由於全反射而再度返回半導體發 光元件之發光面附近。然後,該返回光若恰巧射入於作為 光散射部之許多細小珠狀之填充物4,則由於在該處散 射,光路會變化。因此,折射之返回光係於玻璃界面之全 反射條件被破壞,射入於球狀玻璃2之界面之射入角度涵 蓋在臨界角δ之範圍内,從而從球狀玻璃2射出。其結果, 若根據第二實施型態之經玻璃被覆之發光元件,可將迄今 由於全反射而未往玻璃外部射出之光,往玻璃外部射出, 因此具有可使光量增加之效果。進—步*言,若根據第二 實施型態之經玻璃被覆之發光元件,藉由光散射部介在球 狀玻璃2與+導體發光元件1間,不僅消除球玻璃之全反射 ^失’射出光量增加或光之取出效果提升,而且能以填充 物之粒t、折射率、填充率作為參數來改變散射層之散射 特!生。故,右根據第三實施型態之經玻璃被覆之發光元 件’會具有可使射出亮度分布更均_化或最佳化之效果。 (第三實施型態) 接著’說明關於本發明之第三實施型態。此外,於本實 施型態,對於與第—眚祐刑能 、 貫施i先、之同一部分附上同一符號, 並避免重複說明。 圖11係表示關於本發明之第三實施型態之經玻璃被覆之 131543.doc -19· 200903866 發光兀件(第二發光元件)30A ;於該經玻璃被覆之發光元 件3〇A,作為用以使從半導體發光元件i射出並於球狀玻璃 2内之求面進行全反射而返回之光散射之光散射部,取代 於接口面2A施以由細小凹凸所組成之微細加工,於半導體 ^光元件1之電極,使用具有經微細加工之反射面(具有反 光功此)之鏡電極丨c、丨D。於此,鏡電極1D係使用Μ、The light of the field. Then, if it is emitted, it returns to the region where the semiconductor light-emitting element 1 is present. According to this embodiment, a light-scattering portion is provided. According to 131543.doc 200903866, if light returning to the vicinity of the light-emitting element 由于 due to total reflection enters the joint surface 2A (refer to FIG. 作为) as the light-scattering portion, the light path changes due to the refracting there. Therefore, the total reflection condition of the refraction return light at the glass interface is broken, and the incident angle of the incident light at the interface of the spherical glass 2 is covered within the critical angle δ, thereby passing the thick line arrow like the figure (B). The light path shown by b is emitted from the spherical glass 2. As a result, according to the glass-coated light-emitting element of the first embodiment, light that has not been emitted to the outside of the glass due to total reflection can be emitted to the outside of the glass, so that the amount of light can be increased. Thereby, a high-intensity parallel light source that replaces a conventional lamp light source or the like can be realized, and the shape of the irradiation surface can be freely set to a desired shape. (Different embodiment) Next, the second embodiment of the present invention will be described. In the present embodiment, the same portions as those in the first embodiment are denoted by the same reference numerals and the description thereof will not be repeated. 1 shows a glass-coated light-emitting element (second light-emitting element) 20 according to a second embodiment of the present invention; and the glass-coated light-emitting element 2 〇' is used for emitting from the semiconductor light-emitting element 1 The light scattering portion that is totally reflected by the spherical surface in the spherical glass 2 and returned by the light scattering is replaced by the fine surface of the bonding surface 2A by fine concavities and convexities between the spherical glass 2 and the semiconductor light emitting element 1. a space 2B in which a plurality of fine beads composed of aluminum are interposed as a filler 4 of a light-scattering member, and in a state in which the fillers 4 are interposed, the spherical glass 2 is integrally joined with a UV adhesive. Semiconductor light-emitting element 1. Here, the particle size of the filler is preferably from 1 〇〇 0 claw to 131543.doc -18- 200903866 200 nm. If the system is too small, the scattering ability will decrease, and if it is too large, the scattering power per unit volume will decrease. However, the particle diameter is not particularly limited. Therefore, the light from the semiconductor light-emitting element 1 in the present embodiment also enters the inside of the spherical glass 2, and returns to the vicinity of the light-emitting surface of the semiconductor light-emitting element due to total reflection. Then, if the return light happens to be incident on a plurality of fine bead-like fillers 4 as light scattering portions, the optical path changes due to scattering there. Therefore, the total reflection condition of the refracted return light at the glass interface is broken, and the incident angle of the incident light at the interface of the spherical glass 2 covers the critical angle δ and is emitted from the spherical glass 2. As a result, according to the glass-coated light-emitting element of the second embodiment, light that has not been emitted to the outside of the glass due to total reflection can be emitted to the outside of the glass, so that the amount of light can be increased. According to the second embodiment, if the glass-coated light-emitting element according to the second embodiment is interposed between the spherical glass 2 and the +-conductor light-emitting element 1 by the light-scattering portion, not only the total reflection of the spherical glass is eliminated. The amount of light is increased or the effect of light extraction is improved, and the scattering of the scattering layer can be changed by using the grain t of the filler, the refractive index, and the filling rate as parameters. Health. Therefore, the glass-coated illuminating element ' according to the third embodiment of the right has an effect of making the emission luminance distribution more uniform or optimized. (Third embodiment) Next, a third embodiment of the present invention will be described. In addition, in this embodiment, the same reference numerals are attached to the same parts as those of the first, and the first part, and the repeated explanation is avoided. Fig. 11 is a view showing a glass-coated 131543.doc -19·200903866 light-emitting element (second light-emitting element) 30A according to a third embodiment of the present invention; and the glass-coated light-emitting element 3A for use as a glass-coated light-emitting element 3A Instead of the interface surface 2A, a light-scattering portion composed of fine irregularities is applied to the light-scattering portion that is emitted from the semiconductor light-emitting device i and totally reflected by the surface in the spherical glass 2 and is returned to the semiconductor surface. As the electrode of the optical element 1, mirror electrodes 丨c and 丨D having a microfabricated reflecting surface (having a light reflecting function) are used. Here, the mirror electrode 1D uses Μ,

Au、Pd、Rh等電洞注入性良好且反射率佳之金屬來作 為P電極。 »亥鏡電極1C、1D係以反光性高之材料形成,並且分別 在與P層或η層之接合面側,即靠近發光面之接合面(上 面)’施以凹凸之微細加工。 因此,於本實施型態,行進於球狀玻璃2内部並由於全 反射而再度返回半導體發光元件1之返回光之中,朝向鏡 電極1C、lD者亦於設在鏡電極1C、1D上面之微細加工之 凹凸部分進行散射反射,因此光路變更而返回球狀玻璃2 内硭其結果,若根據第三實施型態之經玻璃被覆之發光 兀件,可將迄今由於全反射而未往玻璃外部射出之光,往 玻璃外部射出,因此具有可使光量增加之效果。進一步而 言,若根據第三實施型態之經玻璃被覆之發光元件,藉由 將鏡電極作為電極,不需要新零件,具有低成本化之效 果。 而且’於與本實施型態之經玻璃被覆之發光元件3〇A類 似之同圖(B)所示類型之經玻璃被覆之發光元件3〇B之情況 時’電極並非設於半導體發光元件1之單面而設於兩面。 131543.doc •20- 200903866 該等電極IE、IF中,位於贵$政, '罪近發出之光所射出之球狀玻璃 2那方之(負)電極]ρ係由透明 β乃逼極構成。另一方面,相反 側之(正)電極1Ε係由鏡電極播士 现电位構成,並且於鄰接於Ρ層之一 面(上面)施以凹凸之微細加工。此外,⑷電㈣係對於 布線基板3之布線圖案32,以使用金線34之金屬線接合來 連接’於半導體發光元件1 u U丨丁 κ赞尤面即上面,設有以透明 樹脂將金線34整條密封之封膠部5。 (第四實施型態) 接著,說明關於本發明之第四實施型態。此外,於本實 施型態,對於與第一實施型態之同一部分附上同一符號, 並避免重複說明。 圖12係表示關於本發明之第四實施型態之經玻璃被覆之 發光元件(第四發光元件)40 ;於該經玻璃被覆之發光元件 40 ’半導體發光元件1係有搭載於透明基板14上之表面安 裝型之半導體晶片構成’並且半導體發光元件1之電極部 分係由透明電極1G、1Η構成。然後,於該半導體發光元 件1之透明電極1G、1Η與布線基板3之布線圖案32間,係 成為以金線34等藉由金屬線接合而連接之構造。而且,於 本實施型態之經玻璃被覆之發光元件40,於半導體發光元 件1之發光面即上面,設有透明樹脂密封之封膠部5。 進一步而言,於該經玻璃被覆之發光元件40,作為光散 射部’至少於對應於半導體發光元件1之發光區域之發光 區域正下方之布線基板3之上面’形成使穿透半導體發光 元件1而射入之光反射之反射面31Α。而且,於該反射面 131543.doc -21 - 200903866 31A施以微細之凹凸加工,構成散射反射面。 因此,於本實施型態’行進於球狀玻璃2内部並由於全 反射而再度返回半導體發光元件丨之返回光之中,穿透半 導體發光元件1並朝向布線基板3者亦於設在該布線基板3 上面之微細加工之凹凸部分之反射面31八進行散射反射。 藉此,光路變更而往球狀玻璃2内部返回之光之中,全反 射條件破壞而在球狀玻璃2之玻璃界面之射入角度成為臨 界角以下之返回光係從球狀玻璃2射出。其結果,若根據 第四實施型態之經玻璃被覆之發光元件’可將迄今由於全 反射而未往玻璃外部射出之光,往玻璃外部射出,因此具 有可使光量增加之效果。進一步而言,若根據第四實施型 態之經玻璃被覆之發光元件’具有亦可適用於表面安裝型 之半導體發光元件之效果。此外,組合第四實施型態與第 二實施型態,製成於密封金線34之封膠部5具有光散射性 之構造’亦不會構成問題。 接著’使用本發明之經玻璃被覆之發光元件,針對從其 遠離一定距離之場所之照度分布進行模擬。此外,於該模 擬中’使用第一實施型態之經玻璃被覆之發光元件丨〇作為 經玻璃被覆之發光元件。其中,於該經玻璃被覆之發光元 件10 ’如圖13(A)、(B)所示,發光元件1之一邊為0.32 mm □(於此’ □意味正方形,以下同理)之LED光源係使用球 破璃2具有折射率2.0(λ=546 nm時)之直徑1.〇爪爪者。而 且’如同圖(C)所示,於從發光元件1僅離開 50 mm之正面 位置,設置一邊1 00 mm□之光偵測器D,藉由模擬編製照 】31543.di -22- 200903866 度分布圖。此外’於發光元件丨之背面設置有反射板R。 若根據該模擬,調查散射率為〇%(於該情況為1 〇〇%正反 射)、10%(剩餘之90%為正反射。以下同理)、30〇/〇、50%、 60%、70%、90°/。、99°/。時之光學特性,結果分別獲得如圖 14八〜圖21八所示之照度分度、如圖148〜圖213所示之亮度 分布’以及以平面(被照射面)表示圖丨4 A〜圖2丨a之照度分Metals such as Au, Pd, and Rh that have good hole injectability and good reflectance are used as the P electrode. The galvanic mirror electrodes 1C and 1D are formed of a material having high reflectivity, and are subjected to fine processing of irregularities on the joint surface side with the P layer or the η layer, that is, the joint surface (upper surface) close to the light-emitting surface. Therefore, in the present embodiment, the inside of the spherical glass 2 is caused to return to the return light of the semiconductor light-emitting element 1 due to total reflection, and the mirror electrodes 1C and 1D are also disposed on the mirror electrodes 1C and 1D. Since the uneven portion of the microfabrication is scattered and reflected, the optical path is changed and returned to the spherical glass 2, and as a result, according to the glass-coated illuminating element of the third embodiment, it is possible to The emitted light is emitted to the outside of the glass, so that it has an effect of increasing the amount of light. Further, according to the glass-coated light-emitting device of the third embodiment, since the mirror electrode is used as an electrode, a new component is not required, and the effect of cost reduction can be achieved. Further, 'in the case of the glass-coated light-emitting element 3B of the type shown in the same figure (B) as the glass-coated light-emitting element 3A of the present embodiment, the 'electrode is not provided in the semiconductor light-emitting element 1 It is set on two sides on one side. 131543.doc •20- 200903866 The electrodes IE and IF are located in the expensive $ politics, and the 'negative electrode' of the spherical glass 2 emitted by the sin near the emitted light is composed of transparent β. . On the other hand, the (positive) electrode 1 on the opposite side is composed of the mirror electrode broadcast potential, and is subjected to microfabrication of the unevenness on the surface (upper surface) adjacent to the tantalum layer. Further, (4) the electric (four) is connected to the wiring pattern 32 of the wiring board 3 by metal wire bonding using the gold wire 34, and is connected to the semiconductor light-emitting element 1 u U 丨 κ κ 面The gold wire 34 is sealed with the entire sealing portion 5. (Fourth embodiment) Next, a fourth embodiment of the present invention will be described. In the present embodiment, the same portions as those in the first embodiment are denoted by the same reference numerals and the description thereof will not be repeated. Fig. 12 is a view showing a glass-coated light-emitting device (fourth light-emitting device) 40 according to a fourth embodiment of the present invention; and the glass-coated light-emitting device 40' is mounted on a transparent substrate 14 The surface mount type semiconductor wafer is configured 'and the electrode portion of the semiconductor light emitting element 1 is composed of transparent electrodes 1G and 1Η. Then, between the transparent electrodes 1G and 1B of the semiconductor light-emitting element 1 and the wiring pattern 32 of the wiring board 3, the gold wires 34 and the like are connected by metal wire bonding. Further, in the glass-coated light-emitting device 40 of the present embodiment, a sealing portion 5 which is sealed with a transparent resin is provided on the light-emitting surface of the semiconductor light-emitting element 1. Further, the light-shielded light-emitting element 40 is formed as a light-scattering portion 'at least on the upper surface of the wiring substrate 3 directly below the light-emitting region corresponding to the light-emitting region of the semiconductor light-emitting element 1 so as to penetrate the semiconductor light-emitting element 1 The reflective surface 31Α reflected by the incident light. Further, the reflecting surface 131543.doc -21 - 200903866 31A is subjected to fine concavo-convex processing to constitute a scattering reflecting surface. Therefore, in the present embodiment, the return light that has traveled inside the spherical glass 2 and returned to the semiconductor light emitting element 由于 due to total reflection, the semiconductor light emitting element 1 and the wiring substrate 3 are also disposed in the return light. The reflecting surface 31 of the uneven portion on the upper surface of the wiring board 3 is scatter-reflected. As a result, among the lights returning to the inside of the spherical glass 2, the return light of the incident angle of the glass interface of the spherical glass 2 below the critical angle is emitted from the spherical glass 2 among the light which is returned to the inside of the spherical glass 2 and the total reflection condition is broken. As a result, according to the glass-coated light-emitting element of the fourth embodiment, light that has not been emitted to the outside of the glass due to total reflection can be emitted to the outside of the glass, so that the amount of light can be increased. Further, the glass-coated light-emitting element ' according to the fourth embodiment has an effect that it can also be applied to a surface mount type semiconductor light-emitting element. Further, in combination with the fourth embodiment and the second embodiment, the structure in which the seal portion 5 of the seal gold wire 34 has a light-scattering property does not pose a problem. Next, using the glass-coated light-emitting element of the present invention, the illuminance distribution from a place far away from the distance is simulated. Further, in the simulation, the glass-coated light-emitting element 第一 of the first embodiment is used as a glass-coated light-emitting element. In the glass-coated light-emitting device 10', as shown in Figs. 13(A) and (B), the LED light source of one side of the light-emitting element 1 is 0.32 mm □ (where ' □ means square, the same applies hereinafter) The ball glass 2 has a refractive index of 2.0 (when λ = 546 nm). Moreover, as shown in Fig. (C), on the front side of the light-emitting element 1 which is only 50 mm away, a photodetector D of one side of 100 mm is set, and the simulation is performed by the simulation] 31543.di -22- 200903866 degrees Distribution. Further, a reflecting plate R is provided on the back surface of the light-emitting element 丨. According to the simulation, the scattering rate is 〇% (in this case, 1%% positive reflection), 10% (the remaining 90% is regular reflection. The same applies below), 30〇/〇, 50%, 60%. , 70%, 90°/. , 99°/. The optical characteristics of the time are obtained as shown in Fig. 14 to Fig. 21, respectively, and the luminance distribution shown in Fig. 148 to Fig. 213 and the plane (irradiated surface) are shown in Fig. 4 A to Fig. 2丨a illumination score

布之平面照度分布之圖14C〜圖21C。而且,圖1 4D〜圖21DFig. 14C to Fig. 21C of the plane illuminance distribution of the cloth. Moreover, Figure 1 4D ~ Figure 21D

係模式性地表示圖14C〜圖21C之等高線圖。此外,為了比 較,於圖22同時表示反射板之吸收為1〇〇%之情況下之各 曲線圖。 石低爆碌The contour maps of FIGS. 14C to 21C are schematically shown. Further, for comparison, Fig. 22 also shows respective graphs in the case where the absorption of the reflecting plate is 1%. Low stone

A “ i ϋ久固上爷L〜圚2 1 L 可理解於散射率(散射比率)與照度之分布間,具有特定 相關關係。例如圖14〜圖17,於散射率小之情況下,表 於照射區域内之中央部照度小,⑨外緣部變大。另一 面,如圖2〇、圖21,於散射率大之情況下,表示於照射 域内之中央部照度大,於外緣部變小。 然後,如圖18Α、圖18C、圖19八、圖㈣所示,可理 =率為4_(大㈣%至7〇%)時’在與發光元件】 形狀相似(具有正方形或長方 ^ …、射區域内,照度在: 緣4與面内成為大致相等之昭 埒射至± ,、、、又如此,可理解藉由調」 放射率’可使照射區域内之昭 $招玫— ’、、' 及句—。無關於發光元件 之規拉、貫她型態之變更, ^ J」進仃垓類控制。 且,若根據該模擬,可知散 間具有例如, ,匕率與照度(全光束量 啕例如圖23所不之相關性, 政射率超過一定比会 J31543.doc -23· 200903866 (於该核擬大約為20%之散射率)’則可安定獲得特定值以 上之照度。 接著,參考圖24來說明關於本發明之照明裝置。 本發明之照明裝置5 0具備:本發明之經玻璃被覆之發光 凡件10、及配置於其前方之像場透鏡(物鏡)6〇。經玻璃被 覆之發光元件1 〇通常其電極藉由凸塊而與布線基板之布線 圖案電性地連接。 若根據本發明之照明裝置50,射出經玻璃被覆之發光元 件1 〇之各光線係往沿著led之發光點位置及經玻璃被覆之 發光元件10之中心點所決定之主光線之z方向,成為某種 具有統一之指向性之光束而行進,並到達像場透鏡60。然 後,到達像場透鏡60之各光束進一步於像場透鏡60之到達 點之高度,藉由其折射力往平行地接近透鏡之光軸之方向 偏向’並到達被照明體(未圖示)。 於此’若經玻璃被覆之發光元件1〇之球狀透鏡與像場透 鏡2 0為理想之無像差透鏡,則全方向之光線亦可垂直地射 入於被照明體,但由於實際上任一透鏡均有甚大之球面像 差’因此無可避免存在有某種程度斜向射入於被照明體之 光線。 然而,藉由一面觀察球狀透鏡與像場透鏡6〇之光線之偏 差狀態,一面如圖2 3,將像場透鏡6 0之折射力與位置予以 最佳化’以使中心及周邊附近之光束大致射入於被照明體 面内,可使從經玻璃被覆之發光元件1 〇射出之光線之大部 分’於其像差之範圍内以儘可能接近垂直之狀態射入於被 131543.doc -24- 200903866 照明體面内。 進一步而言’作為使通過之光束儘可能平行光化之機 構,取代低價之平凸球面透鏡而將像場透鏡製成具有最佳 之非球面形狀(平凸或兩面)之非球面透鏡,亦可更呈重 直。該情況下,關於非球面透鏡’在與照明光之均一化、 亮度提升之效果之比較下,可考慮是否採用。 然後’由於射入於該被照明體之光線位置係對應於經玻 璃被覆之發光元件1 〇之發光點位置來決定,因此若經坡璃 被覆之發光元件10之光線強度一樣,則到達被照明體之各 點之光線強度亦成為近於一樣之狀態。因此,例如於—般 之建築照明構件或液晶電視、投影晝面等之顯示器等範疇 中,不使用昂貴之追加光學系統’如以往之積分透鏡系統 之卬貝之均一化光學系統等,於必要之情況下以追加如 薄擴散板之低價均一化元件之程度,即可實現光線強度大 致均一之照射面或螢幕。 而且,於本發明中,由於經玻璃被覆之發光元件10具備 光散射部,因此能以與外緣部大致同等之照度來照亮照明 區域之内部,並且由於發光元件丨之發光區域所具有之形 狀對應於發光凡件i之形狀,因此藉由將發光元件1形成配 口被,、、、明體之應照凴形狀之形狀,可自由地形成在被照明 體之照明區域。 接著,參考圖25來說明關於本發明之投影裝置(以下僅 稱為投影機),但本發明不限定於該圖所示者。 本發明之投影機!00具備:本發明之經玻璃被覆之發光 131543.doc -25, 200903866 元件10R、10G、10B、像場透鏡60、LCD(液晶顯示裝 置)70R、70G、70B及合波元件80及投影透鏡90。此外, 經玻璃被覆之發光元件10R、10G、10B係通常其等之電極 藉由凸塊電性地連接於布線基板之布線圖案。由各經玻璃 被覆之發光元件10R、10G、10B及各LCD 70R、70G、70B 來構成照明裝置50R、50G、50B。 若根據如此構成之投影機1 00,來自作為RGB之各光源 所設置之經玻璃被覆之發光元件10R、丨0G、10B之光係於 分別穿透像場透鏡60後,從背面射入於LCD(液晶顯示裝 置)70R、70G ' 70B而構成背光。然後,於該LCD(液晶顯 示裝置)70R、70G、70B,形成對應於RGB之各光成分之 圖像後’其等圖像成分由合波元件8 〇予以合波後,射入於 投影透鏡90。 若根據本發明之投影機1 00,以發光元件1 OR、1 0G、 10B及1片像場透鏡6〇之結構來構成三原色之各LCD,不使 用以往複雜且具某體積之積分光學系統等均一化光學系 統’即可構成以與外緣部大致同等之照度來均一地照亮照 明區域之内部之光學引擎部。因此,可將以往3片之LCD 杈,τν光學系統大幅減少其零件數,且小型、低價地製作。 已。羊細並參考特定實施態樣來說明本發明,但對於熟悉 °亥技藝人士而言’當然可不脫離本發明之精神及範圍而加 '各種I更或修正。本申請案係根據2〇〇7年5月丨7日申請 之日本專利中請案(日本特願挪7· 1321 94),在此併入其内 谷作為參考。 131543.doc -26- 200903866 [產業上之可利用性] 。本發明之、經玻璃才皮覆之I《元件係照射效_ 1好,並且 可將射出光效率良好地往所需方向予以導光,且除了具有 不必與透鏡或光導管之位置對準之效果外,並由於可藉由 光散射部有效率地取出來自半導體發光元件之射出光,作 為:光用之光以供利用,因此對於經玻璃被覆之發光元件 之剛方配置有像場透鏡(物鏡)之照明光源或具有該照明光 源之投影裝置等有用。 【圖式簡單說明】 圖1為關於本發明之第一實施型態之經玻璃被覆之發光 元件之發光元件及布線基板之剖面之概念圖。 圖2(A)為该經玻璃被覆之發光元件之發光元件及布線基 板之纠面之放大概念圖,(B)係表示該發光元件之電極等 之形狀之概略俯視圖。 圖3(A)〜(D)係表示球狀玻璃之折射率為】5之情況下之計 算結果(光量分布)之圖。 圖4(A)〜(D)係表示球狀玻璃之折射率為2 〇之情況下之計 算結果(光量分布)之說明圖。 圖5(A)係表不從無指向性之發光元件往照射面之照射光 路及照射面之光量分布之曲線圖,(B)係表示從本發明之 k玻璃被覆之發光元件往照射面之照射光路及照射面之光 量分布之曲線圖。 圖ό係表示本發明之經玻璃被覆之發光元件之射出光之 角度依存性之圖。 131543.doc -27- 200903866 士圖7(A)係表示發光元件之發光點a為球透鏡之最後方點 時之球透鏡射出後之光路之說明圖,⑻係表示發光點A比 球透鏡之最後方點往照射方向之前方側偏離時之光路之說 明圖。 圖8係表示本發明之經玻璃被覆之發光元件之球面像差 所造成之光路偏移之說明圖。 圖9(A)係表示本發明之經玻璃被覆之發光元件之玻璃内 全反射區域之說明圖,(B)係表示從該玻璃内射出時之照 明光之光路之光路圖。 圖10為關於本發明之第二實施型態之經玻璃被覆之發光 元件之剖面之概念圖。 圖11(A)、(B)為關於本發明之第三實施型態之經玻璃被 覆之發光元件之剖面之概念圖及其變形例。 Η 12為關於本發明之第四實施型態之經玻璃被覆之發光 元件之剖面之概念圖。 圖13係表示利用本發明之經玻璃被覆之發光元件來進行 調查照度分布之模擬時之設定條件之模式圖。 圖14Α係表不將反射板之散射率設定為〇%(於該情況為 100%正反射)並進行模擬時之照度分布之曲線圖。 圖14Β係表不將反射板之散射率設定為(於該情况為 100%正反射)並進行模擬時之亮度分布之曲線圖。 圖14C係表示將反射板之散射率設定為〇%(於該情况為 100%正反射)並進行模擬時之平面内照度分布之曲線圖。 圖14D係模式性地表示圖14c之等高線圖。 131543.doc -28- 200903866 圖15A係表示將反射板之散射率設定為1〇%並進行模擬 時之照度分布之曲線圖。 圖15B係表示將反射板之散射率設定為1〇%並進行模擬 時之亮度分布之曲線圖。 圖15C係表示將反射板之散射率設定為1〇%並進行模擬 時之平面内照度分布之曲線圖。 圖15D係模式性地表示圖15c之等高線圖。 圖16A係表示將反射板之散射率設定為3〇%並進行模擬 時之照度分布之曲線圖。 圖16B係表示將反射板之散射率設定為3〇%並進行模擬 時之亮度分布之曲線圖。 圖16C係表示將反射板之散射率設定為3〇%並進行模擬 時之平面内照度分布之曲線圖。 圖16D係模式性地表示圖1 6c之等高線圖。 圖17A係表不將反射板之散射率設定為5〇%並進行模擬 時之照度分布之曲線圖。 圖17B係表示將反射板之散射率設定為5〇%並進行模擬 時之亮度分布之曲線圖。 圖1 7C係表示將反射板之散射率設定為5〇Q/。並進行模擬 時之平面内照度分布之曲線圖。 圖17D係模式性地表示圖1 7C之等高線圖。 圖1 8 A係表示將反射板之散射率設定為6〇%並進行模擬 時之照度分布之曲線圖。 圖1 8B係表示將反射板之散射率設定為6〇Q/。並進行模擬 131543.doc •29· 200903866 時之亮度分布之曲線圖。 圖1 8C係表示將反射板之散射率設定為60%並進行模擬 時之平面内照度分布之曲線圖。 圖1 8D係模式性地表示圖1 8C之等高線圖。 圖19A係表示將反射板之散射率設定為70%並進行模擬 時之照度分布之曲線圖。 圖1 9B係表示將反射板之散射率設定為70%並進行模擬 時之亮度分布之曲線圖。 " 圖1 9C係表示將反射板之散射率設定為70%並進行模擬 時之平面内照度分布之曲線圖。 圖19D係模式性地表示圖19C之等高線圖。 圖20A係表示將反射板之散射率設定為90%並進行模擬 時之照度分布之曲線圖。 圖20B係表示將反射板之散射率設定為90%並進行模擬 時之亮度分布之曲線圖。 圖20C係表示將反射板之散射率設定為90%並進行模擬 i 時之平面内照度分布之曲線圖。 圖20D係模式性地表示圖20C之等高線圖。 圖21A係表示將反射板之散射率設定為99%並進行模擬 時之照度分布之曲線圖。 圖21B係表示將反射板之散射率設定為99%並進行模擬 時之亮度分布之曲線圖。 圖2 1C係表示將反射板之散射率設定為99%並進行模擬 時之平面内照度分布之曲線圖。 131543.doc -30- 200903866 圖21D係模式性地表示圖21C之等高線圖。 圖2 2 A係表示將反射板之吸收率設定為丨〇 〇 %並進行模擬 時之照度分布之曲線圖。 圖22B係表示將反射板之吸收率設定為1〇〇%並進行模擬 時之亮度分布之曲線圖。 圖22C係表示將反射板之吸收率設定為1〇〇%並進行模擬 時之平面内照度分布之曲線圖。 圖22D係模式性地表示圖22c之等高線圖。 圖23係表*反射板之散射率與全%束量之關係之曲線 圖。 圖24(A)、(B)係表示本發明之照明裝置之結構圖及正面 圖。 圖25係表示本發明之投影裝置之結構圖。 【主要元件符號說明】 1 半導體發光元件(發光元件) ΙΑ, 1B 電極 1C, ID, 1E 鏡電極 IF, 1G, 1H 透明電極 2 球狀玻璃(玻璃) 2A 接合面 3 布線基板 4 填充物 5 封膠部 10, 20, 30A, 經玻璃被覆之發光元件 V, 131543.doc -31 - 200903866 30B, 40 10R, 10G, 10B 經玻璃被覆之發光裝置 14 透明基板 31 基板 3 ΙΑ 反射面(散射反射面) 32 布線圖案 33 凸塊 50 照明裝置 60 像場透鏡(物鏡) 70R, 70G, 70B LCD(液晶顯示裝置) 80 合波元件 90 投影透鏡 100 投影機 131543.doc -32-A “i ϋ 固 固 上 上 L L 圚 1 2 1 L can be understood between the scattering rate (scattering ratio) and the distribution of illuminance, there is a specific correlation. For example, Figure 14 ~ Figure 17, in the case of small scattering rate, the table In the central portion of the irradiation region, the illuminance is small, and the outer edge portion of 9 is enlarged. On the other hand, as shown in Fig. 2 and Fig. 21, when the scattering ratio is large, the illuminance at the central portion in the irradiation region is large, and the outer edge portion is large. Then, as shown in Fig. 18Α, Fig. 18C, Fig. 19, and Fig. (4), when the ratio = 4 (large (four)% to 7〇%), the shape is similar to that of the light-emitting element (having a square or a long length). In the square ^ ..., in the area of the shot, the illuminance is: The edge 4 is approximately equal to the inside of the plane, and the illuminance is ±, ,, and so, and it can be understood that by adjusting the emissivity, the shot can be made in the area of illumination.玫— ', ' and sentence -. Regardless of the regulation of the illuminating element, the change of her type, ^ J" into the 仃垓 class control. And, according to the simulation, it can be seen that the scatter has, for example, the 匕 rate With the illuminance (the total beam amount 啕 such as the correlation of Figure 23, the political rate exceeds a certain ratio will be J31543.doc -23· 200 903866 (in the case of the evaluation of a scattering rate of about 20%), the illuminance of a specific value or more can be obtained stably. Next, the illuminating device according to the present invention will be described with reference to Fig. 24. The illuminating device 50 of the present invention is provided with the present invention. The glass-coated light-emitting element 10 and the field lens (objective lens) disposed in front of the glass-coated light-emitting element 1 are usually electrically connected to the wiring pattern of the wiring substrate by bumps. According to the illuminating device 50 of the present invention, the chief ray of each of the light rays of the glass-coated light-emitting element 1 is emitted to the position of the light-emitting point along the led and the center point of the glass-coated light-emitting element 10. The z-direction travels as a beam of uniform directivity and reaches the field lens 60. Then, the beams reaching the field lens 60 are further at the height of the arrival point of the field lens 60, by which it is refracted. The force is biased toward the direction of the optical axis of the lens in parallel and reaches the object to be illuminated (not shown). Here, the spherical lens and the field lens 20 which are light-coated by the glass are ideal. Without the aberration lens, the omnidirectional light can also be incident perpendicularly on the object to be illuminated, but since virtually any lens has a large spherical aberration, it is inevitable that there is a certain degree of oblique injection into the body. Light of the illuminating body. However, by observing the state of deviation of the spheroidal lens from the light of the field lens 6 ,, the refractive power and position of the field lens 60 are optimized as shown in FIG. The light beam in the vicinity of the center and the periphery is incident on the surface of the illuminated body, so that most of the light emitted from the glass-coated light-emitting element 1 can be incident as close as possible to the vertical within the range of the aberration. Illuminated decently by 131543.doc -24- 200903866. Further, 'as a mechanism for making the passing beam as parallel as possible, instead of a low-cost plano-convex lens, the field lens is made into an aspherical lens having an optimum aspherical shape (flat convex or double-sided), It can also be more straight. In this case, whether or not the aspherical lens is used in comparison with the effect of uniformization of illumination light and brightness enhancement can be considered. Then, 'the position of the light incident on the illuminated body corresponds to the position of the light-emitting point of the glass-coated light-emitting element 1 ,, so if the light intensity of the light-emitting element 10 covered by the glass is the same, the illumination is reached. The light intensity at each point of the body also becomes nearly the same state. Therefore, for example, in the category of a general architectural lighting member, a display such as a liquid crystal television or a projection screen, an expensive additional optical system, such as a homogenous optical system of a conventional integrator lens system, is not required. In the case of adding a low-cost uniformity element such as a thin diffusion plate, an illumination surface or a screen having substantially uniform light intensity can be realized. Further, in the present invention, since the light-shielding member 10 coated with the glass is provided with the light-scattering portion, the inside of the illumination region can be illuminated with substantially the same illuminance as the outer edge portion, and the light-emitting region of the light-emitting element has Since the shape corresponds to the shape of the light-emitting element i, the light-emitting element 1 can be formed into a fitting, and the shape of the bright body can be freely formed in the illumination region of the object to be illuminated. Next, a projection apparatus (hereinafter simply referred to as a projector) according to the present invention will be described with reference to Fig. 25, but the present invention is not limited to the one shown in the figure. The projector of the invention! 00 is provided with: glass-coated light of the present invention 131543.doc -25, 200903866 elements 10R, 10G, 10B, field lens 60, LCD (liquid crystal display device) 70R, 70G, 70B and multiplexer 80 and projection lens 90 . Further, the glass-coated light-emitting elements 10R, 10G, and 10B are generally electrically connected to the wiring pattern of the wiring substrate by bumps. The illumination devices 50R, 50G, and 50B are configured by the glass-coated light-emitting elements 10R, 10G, and 10B and the respective LCDs 70R, 70G, and 70B. According to the projector 100 configured as above, the light from the glass-coated light-emitting elements 10R, 丨0G, and 10B provided as the respective light sources of RGB penetrates the field lens 60 and enters the LCD from the back side. (Liquid crystal display device) 70R, 70G' 70B constitutes a backlight. Then, after the LCD (liquid crystal display device) 70R, 70G, and 70B forms an image corresponding to each light component of RGB, the image components are combined by the multiplexer element 8 and then incident on the projection lens. 90. According to the projector 100 of the present invention, the LCDs of the three primary colors are configured by the structures of the light-emitting elements 1 OR, 10G, 10B and one field lens 6〇, and the integrated optical system having a complicated volume and a certain volume is not used. The uniform optical system 'is configured to uniformly illuminate the optical engine portion inside the illumination region with substantially the same illumination as the outer edge portion. Therefore, the conventional three-piece LCD can be used, and the τν optical system can be produced in a small size and at a low cost by drastically reducing the number of parts. Already. The present invention will be described with reference to the specific embodiments, and it is understood that the invention may be modified or modified without departing from the spirit and scope of the invention. This application is based on a Japanese patent application filed on May 27, 2007. (Japanese Patent No. 7 1321 94), which is incorporated herein by reference. 131543.doc -26- 200903866 [Industrial availability]. The glass-coated I of the present invention has a good illumination effect, and can efficiently emit light in a desired direction, and has no need to be aligned with the position of the lens or the light guide. In addition, since the light emitted from the semiconductor light-emitting element can be efficiently taken out by the light-scattering portion and used as light for light, an image field lens is disposed on the light-emitting element of the glass-coated light-emitting element ( An illumination source of an objective lens or a projection device having the illumination source is useful. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a conceptual view showing a cross section of a light-emitting element and a wiring board of a glass-coated light-emitting element according to a first embodiment of the present invention. Fig. 2(A) is an enlarged conceptual view showing the surface of the light-emitting element and the wiring board of the light-shielded light-emitting element, and Fig. 2(B) is a schematic plan view showing the shape of the electrode or the like of the light-emitting element. 3(A) to 3(D) are diagrams showing the calculation results (light amount distribution) in the case where the refractive index of the spherical glass is 5 . 4(A) to 4(D) are explanatory views showing the calculation result (light amount distribution) in the case where the refractive index of the spherical glass is 2 〇. Fig. 5(A) is a graph showing the light distribution of the light path and the irradiation surface of the light-emitting element from the non-directional light-emitting element to the irradiation surface, and (B) showing the light-emitting element coated with the glass of the present invention to the irradiation surface. A graph of the light distribution of the illumination path and the illumination surface. The figure shows the angle dependence of the light emitted from the glass-coated light-emitting element of the present invention. 131543.doc -27- 200903866 Figure 7(A) is an explanatory diagram showing the optical path of the ball lens after the light-emitting point a of the light-emitting element is the last point of the ball lens, and (8) shows that the light-emitting point A is larger than the ball lens. An explanatory diagram of the optical path when the last square point deviates to the side before the irradiation direction. Fig. 8 is an explanatory view showing the optical path shift caused by the spherical aberration of the glass-coated light-emitting element of the present invention. Fig. 9(A) is an explanatory view showing a total internal reflection region of the glass-coated light-emitting device of the present invention, and Fig. 9(B) is an optical path diagram showing the optical path of the illumination light when emitted from the inside of the glass. Fig. 10 is a conceptual view showing a cross section of a glass-coated light-emitting element according to a second embodiment of the present invention. Fig. 11 (A) and (B) are conceptual views showing a cross section of a glass-coated light-emitting device according to a third embodiment of the present invention, and a modification thereof. Η 12 is a conceptual diagram of a cross section of a glass-coated light-emitting element of a fourth embodiment of the present invention. Fig. 13 is a schematic view showing setting conditions for the simulation of the investigation of the illuminance distribution by the glass-coated light-emitting element of the present invention. Fig. 14 is a graph showing the illuminance distribution when the scattering rate of the reflecting plate is not set to 〇% (in this case, 100% regular reflection) and the simulation is performed. Fig. 14 is a graph showing the luminance distribution when the scattering rate of the reflecting plate is set to (in this case, 100% regular reflection) and the simulation is performed. Fig. 14C is a graph showing the in-plane illuminance distribution when the scattering rate of the reflecting plate is set to 〇% (in this case, 100% regular reflection) and the simulation is performed. Fig. 14D schematically shows a contour map of Fig. 14c. 131543.doc -28- 200903866 Fig. 15A is a graph showing the illuminance distribution when the scattering rate of the reflecting plate is set to 1% and the simulation is performed. Fig. 15B is a graph showing the luminance distribution when the scattering rate of the reflecting plate is set to 1% and simulated. Fig. 15C is a graph showing the in-plane illuminance distribution when the scattering rate of the reflecting plate is set to 1% and simulated. Fig. 15D schematically shows a contour map of Fig. 15c. Fig. 16A is a graph showing the illuminance distribution when the scattering rate of the reflecting plate is set to 3〇% and simulated. Fig. 16B is a graph showing the luminance distribution when the scattering rate of the reflecting plate is set to 3〇% and the simulation is performed. Fig. 16C is a graph showing the in-plane illuminance distribution when the scattering rate of the reflecting plate is set to 3〇% and simulated. Fig. 16D schematically shows a contour map of Fig. 16c. Fig. 17A is a graph showing the illuminance distribution when the scattering rate of the reflecting plate is not set to 5 % and the simulation is performed. Fig. 17B is a graph showing the luminance distribution when the scattering rate of the reflecting plate is set to 5〇% and the simulation is performed. Fig. 1 7C shows that the scattering rate of the reflecting plate is set to 5 〇 Q / . And a graph of the illuminance distribution in the plane when the simulation is performed. Fig. 17D schematically shows a contour map of Fig. 1C. Fig. 1 8 is a graph showing the illuminance distribution when the scattering rate of the reflecting plate is set to 6〇% and the simulation is performed. Fig. 1B shows that the scattering rate of the reflecting plate is set to 6 〇 Q / . And a graph of the brightness distribution at the time of simulation 131543.doc •29· 200903866. Fig. 1 is a graph showing the in-plane illuminance distribution when the scattering rate of the reflecting plate is set to 60% and simulated. Fig. 1 8D schematically shows a contour map of Fig. 18C. Fig. 19A is a graph showing the illuminance distribution when the scattering rate of the reflecting plate is set to 70% and the simulation is performed. Fig. 1 9B is a graph showing the luminance distribution when the scattering rate of the reflecting plate is set to 70% and the simulation is performed. " Fig. 1 9C is a graph showing the in-plane illuminance distribution when the scattering rate of the reflecting plate is set to 70% and the simulation is performed. Fig. 19D schematically shows a contour map of Fig. 19C. Fig. 20A is a graph showing the illuminance distribution when the scattering rate of the reflecting plate is set to 90% and simulated. Fig. 20B is a graph showing the luminance distribution when the scattering rate of the reflecting plate is set to 90% and simulated. Fig. 20C is a graph showing the in-plane illuminance distribution when the scattering rate of the reflecting plate is set to 90% and the simulation i is performed. Fig. 20D schematically shows a contour map of Fig. 20C. Fig. 21A is a graph showing the illuminance distribution when the scattering rate of the reflecting plate is set to 99% and simulated. Fig. 21B is a graph showing the luminance distribution when the scattering rate of the reflecting plate is set to 99% and simulated. Fig. 2 1C is a graph showing the in-plane illuminance distribution when the scattering rate of the reflecting plate is set to 99% and simulated. 131543.doc -30- 200903866 Fig. 21D schematically shows a contour map of Fig. 21C. Fig. 2 2 A shows a graph showing the illuminance distribution when the absorptivity of the reflecting plate is set to 丨〇 〇 % and the simulation is performed. Fig. 22B is a graph showing the luminance distribution when the absorptivity of the reflecting plate is set to 1% and the simulation is performed. Fig. 22C is a graph showing the in-plane illuminance distribution when the absorptivity of the reflecting plate is set to 1% and simulated. Fig. 22D schematically shows a contour map of Fig. 22c. Fig. 23 is a graph showing the relationship between the scattering rate of the reflecting plate and the total % beam amount. Fig. 24 (A) and (B) are a structural view and a front view showing a lighting device of the present invention. Figure 25 is a view showing the configuration of a projection apparatus of the present invention. [Description of main component symbols] 1 Semiconductor light-emitting device (light-emitting device) ΙΑ, 1B electrode 1C, ID, 1E mirror electrode IF, 1G, 1H transparent electrode 2 spherical glass (glass) 2A joint surface 3 wiring substrate 4 filler 5 Sealing part 10, 20, 30A, glass-coated light-emitting element V, 131543.doc -31 - 200903866 30B, 40 10R, 10G, 10B Glass-coated light-emitting device 14 Transparent substrate 31 Substrate 3 反射 Reflecting surface (scattering reflection Surface) 32 Wiring pattern 33 Bump 50 Illumination device 60 Field lens (objective lens) 70R, 70G, 70B LCD (liquid crystal display device) 80 Combining element 90 Projection lens 100 Projector 131543.doc -32-

Claims (1)

200903866 十、申請專利範圍·· 1' 種經玻璃被覆之發光元件,其包含 半導體發光元件; 玻璃,其具有將自該半導體發光元件所 之表面,該表面為較半球面寬廣之球形,於一 “射出 截球部,且於前述截球部安袭於前述體1分具有 :述半導體發光元件之發光峰值波長之折:=以 上,所述截球部之最大徑相對於直 ·7以 上;及 王乂為1.8以 光散射4,其係使未從前述玻璃之前述表面射出 在於前述玻璃内部之光折射者。 2. 如請求項丨之經玻璃被覆之發光元件,其中 别述光散射部係於前述玻璃之被覆前述半導體發光元 件之發光面之面所形成的凹凸。 3. 如請求項1之經玻璃被覆之發光元件,其中 /則述光散射部係、自綠射構件所構成,㈣散射構件 係設置於前述玻璃之被覆前述半導體發光元件之發光面 之面與4述半導體發光元件之前述發光面間。 4. 如請求項丨之經玻璃被覆之發光元件,其中 岫述光散射部係形成於前述半導體發光元件之具有反 光功能之電極。 5·如凊求項1之經玻璃被覆之發光元件,其中 前述光散射部為設置於與前述半導體發光元件連接之 布線基板上之散射反射面。 131543.doc 200903866 6. 如請求項1至5中任一項之經玻璃被覆之發光元件,其中 乐述折射率為2.3以下。 7. 如6月求項1至6中任一項之經玻璃被覆之發光元件,其中 月ίΐ述折射率為1.8〜2 2,前述比為3 5以下。 8. 如清求項1至7中任一項之經玻璃被覆之發光元件,其中 月述半導體發光元件為發光二極體。 9 ·如請求項1至8中任一 —項之經玻璃被覆之發光元件,其中200903866 X. Patent Application Scope 1· A glass-coated light-emitting element comprising a semiconductor light-emitting element; glass having a surface from the surface of the semiconductor light-emitting element, the surface being wider than a hemispherical sphere, "Importing the intercepting portion, and the portion of the body at the cutting portion has a fold of the peak wavelength of the semiconductor light-emitting element: = or more, and the maximum diameter of the ball-cut portion is relatively greater than or equal to 7; And Wang Hao is light scattering 4 which is a light refracting element which is not emitted from the aforementioned surface of the glass in the inside of the glass. 2. The glass-coated light-emitting element of claim ,, wherein the light scattering portion is not described And a concave-convex surface formed by coating the surface of the light-emitting surface of the semiconductor light-emitting device with the glass. 3. The glass-coated light-emitting element of claim 1, wherein the light-scattering portion is formed of a green light-emitting member. (4) The scattering member is provided between the surface of the glass covering the light emitting surface of the semiconductor light emitting element and the light emitting surface of the semiconductor light emitting element. The glass-coated light-emitting device, wherein the light-scattering portion is formed on the glass-shielded light-emitting element of the semiconductor light-emitting device, wherein the light-scattering portion is The light-reflecting surface of the glass-coated light-emitting element according to any one of claims 1 to 5, wherein the refractive index of the music is 2.3 or less. 7. The glass-coated light-emitting element according to any one of items 1 to 6, wherein the refractive index is 1.8 to 2 2, and the ratio is 35 or less. The glass-coated light-emitting element according to any one of the preceding claims, wherein the semiconductor light-emitting element is a light-emitting diode, wherein the glass-coated light-emitting element according to any one of claims 1 to 8, wherein 一種投影裝置,其 包含如請求項1 0之照明袈 一項之經玻 置作為光 131543.docA projection apparatus comprising a glass of illumination as claimed in claim 1 as a light 131543.doc
TW097118190A 2007-05-17 2008-05-16 Glass coated light emitting element, illuminator and projector TW200903866A (en)

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US8040039B2 (en) * 2004-03-18 2011-10-18 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Device and method for emitting composite output light using multiple wavelength-conversion mechanisms
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