TW200901833A - Apparatus for generating plasma - Google Patents

Apparatus for generating plasma Download PDF

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Publication number
TW200901833A
TW200901833A TW97115806A TW97115806A TW200901833A TW 200901833 A TW200901833 A TW 200901833A TW 97115806 A TW97115806 A TW 97115806A TW 97115806 A TW97115806 A TW 97115806A TW 200901833 A TW200901833 A TW 200901833A
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TW
Taiwan
Prior art keywords
plate structure
gas
raw gas
plasma
plasma generating
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TW97115806A
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Chinese (zh)
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TWI406600B (en
Inventor
Kyung-Joon Kim
Hyung-Il Kim
In-Chul Shin
Young-Su Jun
Myung-Eun Sung
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K C Tech Co Ltd
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Priority claimed from KR1020070042228A external-priority patent/KR100872994B1/en
Priority claimed from KR1020070043011A external-priority patent/KR100874340B1/en
Priority claimed from KR1020070043657A external-priority patent/KR100874341B1/en
Application filed by K C Tech Co Ltd filed Critical K C Tech Co Ltd
Publication of TW200901833A publication Critical patent/TW200901833A/en
Application granted granted Critical
Publication of TWI406600B publication Critical patent/TWI406600B/en

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Abstract

The invention discloses a plasma generating device, for mixing source air and active air at the expected position, comprising: a plasma generating unit; a sprayer, arranged at the lower part of the plasma generating unit, wherein the sprayer and the plasma generating unit are formed into a plasma chamber, including an upper plate structure combined up and down and a lower plate including a plurality of source air injection opens, and a source air flowing space for supplying source air is composed of the upper plate structure and the lower plates structure, and one of which has a plurality of ducts perforated up and down; an active air supply unit, for supplying active air to the plasma generating unit; and a source air supply unit, for supplying source air to the source air flowing space inside the sprayer. Accordingly, the source air and the active air are mixed successfully on the expected position to advance deposition efficiency of plasma.

Description

200901833 九、發明說明: 【發明所屬之技術領域】 本發明提供—種電漿產生裝置,更具體而言,係一種用 以表面處王里及薄膜形成於計劃之位置上均句地混合原氣及 • 活躍氣體以提高電漿蒸發率之電漿產生裝置。 【先前技術】 圖1為展示習知之電漿產生裝置之示意圖,圖2為展示為 °兒月圖1所示之導管及下板結構關係之擴大部分之剖面 ( 圖。 參考圖1及圖2 ’習知之電漿產生裝置包括電漿產生單元 10、活羅氣體供應單元3〇、原氣供應單元4〇及喷頭5〇,其 中上述單元白女裝於支撐單元上。產生電漿之電漿室提供 於電漿產生單元10與喷頭5〇之間,於電漿室内產生之電漿 藉由形成於喷頭之多個活躍氣體噴霧口 63可向喷頭5〇下部 移動。活躍氣體之電漿經過噴頭5〇時轉換為離子或自由基 (radical)之狀態,離子或自由基於噴頭5〇之導管6〇之下部 I 可噴霧向外部。 在喷頭50之下部具有處理空間,處理物在處理空間中經 . 電漿加工,例如薄膜形成、淨化(cleanse)等《電漿產生裝 置及其處理空間一般保持真空狀態,處理物可安裝於加熱 器上。 ^ 電漿產生單元10由上電漿板12及下電漿板14構成,且由 上電漿板12及下電漿板14可形成活躍氣體供應單元之流 管及原氣供應單元40之流管。藉由活躍氣體供應單元心 130887.doc 200901833 流管而供應之活躍氣體在經過安裝於電漿產生單元10下部 之=毅產生電極18時轉換為電漿,其中電衆產生電極18包 括多個孔,因而活躍氣體可有效地通過。 在習知之電漿產生裝置中,喷頭50包括上板結構6〇及下 板結制,其中該上板結構6G上形成提供活躍氣體嘴霧口 63之導g 62,該下板結構7G形成原氣噴霧口 74。通過活躍 氣體切口63之活躍離子或自由基可與通過原氣噴霧口 μ 之原氣反應,藉由反應薄膜可形成於處理物上。 因為按照裝置之結構原氣供應單元4〇之流管與喷頭5〇之 周圍或外部連接,房、氣不是自喷頭50之中心而是自喷頭5〇 之周圍流人’因此周圍喷霧之原氣比[。噴霧之原氣更 多:其結果為在習知之電漿產生裝置之中心被供應較少之 原氣而容易在處理物中心形成不良薄《,雖然、能夠形成薄 臈’但薄臈之厚度太小。 除此之外’習知之喷頭5G之原氣噴霧頭74安裝於比活躍 氣體噴霧口 63略高之上部部位。因為—般藉由原氣喷霧口 而供應之原氣$比藉由導管62供應之活躍氣體量更小, 因此原氣之供應可被活躍氣體干擾,其結果為導致原氣不 能到達處理物。 士上所述,右原氣不能到達處理物,則會導致處理物上 形成之薄膜太薄’或者品質之惡化。 另外在圖2中展示先前技術之問題。 灿圖2所不’喷頭50中之導管62及下板結構70之間會存 在微工隙G,原、氣會通過微空隙G流出,與此相反,活躍 130887.doc 200901833 氣體會往噴頭5〇裏流 产人 右原氣通過微空隙G流出,則原 乳會開始與自導管5〇 踹 之下鳊出來之活躍氣體反應,在到達200901833 IX. Description of the Invention: [Technical Field] The present invention provides a plasma generating apparatus, and more particularly, a method for mixing a raw gas at a surface of a king and a film formed at a planned position. And • Plasma generating devices that activate gases to increase plasma evaporation rates. [Prior Art] Fig. 1 is a schematic view showing a conventional plasma generating apparatus, and Fig. 2 is a cross section showing an enlarged portion of the relationship between the structure of the duct and the lower plate shown in Fig. 1 (refer to Figs. 1 and 2). The conventional plasma generating device includes a plasma generating unit 10, a living gas supply unit 3, a raw gas supply unit 4, and a shower head 5, wherein the unit is white on the support unit. The slurry chamber is provided between the plasma generating unit 10 and the spray head 5〇, and the plasma generated in the plasma chamber is movable to the lower portion of the spray head 5 by a plurality of active gas spray ports 63 formed in the spray head. Active gas The plasma is converted into an ion or radical state when passing through the nozzle 5 ,, and the ion or freely based on the lower portion I of the nozzle 5 可 can be sprayed to the outside. There is a processing space under the nozzle 50, and the treatment is performed. The plasma is processed in the processing space, such as film formation, cleanse, etc. The plasma generating device and its processing space are generally kept in a vacuum state, and the processed material can be mounted on the heater. ^ The plasma generating unit 10 is composed of Plasma 12 and the lower plasma plate 14 are formed, and the upper plasma plate 12 and the lower plasma plate 14 can form a flow tube of the active gas supply unit and a flow tube of the raw gas supply unit 40. The active gas supply unit core 130887. Doc 200901833 The active gas supplied from the flow tube is converted into a plasma when passing through the electrode 13 of the lower portion of the plasma generating unit 10, wherein the electricity generating electrode 18 includes a plurality of holes, so that the active gas can pass efficiently. In the conventional plasma generating apparatus, the head 50 includes an upper plate structure 6 〇 and a lower plate, wherein the upper plate structure 6G is formed with a guide g 62 for providing an active gas nozzle mist 63, and the lower plate structure 7G is formed. The raw gas spray port 74. The active ions or radicals passing through the active gas slit 63 can react with the raw gas passing through the raw gas spray port μ, and the reaction film can be formed on the treated material because the raw gas supply unit according to the structure of the device The flow tube of the 4th tube is connected to the periphery or the outside of the nozzle 5, and the room and the gas are not from the center of the nozzle 50 but flow from the periphery of the nozzle 5'. Therefore, the original gas is sprayed around the surface. More original gas: the result is The center of the conventional plasma generating device is supplied with a small amount of raw gas and is easy to form a thin film in the center of the processing body. Although it can form a thin raft, the thickness of the thin enamel is too small. The 5G raw gas spray head 74 is installed at a position slightly higher than the active gas spray port 63. Because the raw gas supplied by the raw gas spray port is smaller than the active gas supplied by the conduit 62, Therefore, the supply of the raw gas can be disturbed by the active gas, and as a result, the raw gas cannot reach the treated material. As described above, if the right raw gas cannot reach the treated material, the film formed on the treated material is too thin' or the quality is Further, the problem of the prior art is shown in Fig. 2. There is a micro gap G between the duct 62 and the lower plate structure 70 in the nozzle 50, and the original gas will flow out through the micro-gap G. In contrast, active 130887.doc 200901833 gas will flow into the nozzle 5 流 abortion right qi out through the micro-void G, then the raw milk will begin to react with the active gas coming out of the 5 导管 catheter, upon arrival

處理物之前反應會已Μ社圭。廿D .匕、左、,束並且,活躍氣體通過微空隙 G流入,在喷頭50裏會引起反應。 中會浪費原氣或活躍氣 因此,在習知之電漿產生裝置 體,且會引起薄膜品質之惡化。 【發明内容】The reaction will be before the treatment.廿D.匕, left, and bundle, the active gas flows in through the micro-voids G, causing a reaction in the shower head 50. In the meantime, the raw gas or the active gas is wasted. Therefore, the conventional plasma generates the device body and causes deterioration of the film quality. [Summary of the Invention]

因此本發明經提出以解決 並且本發明之目的為提供一 分配原氣之、按照計劃進一 裝置。 先前技術中已存之上述問題, 種藉由噴頭供應原氣,能均勻 步能調整原氣分配之電漿產生 本發明可提供-種與活料霧無關且能把原氣有效地運 到達處理物之電漿產生裝置。 本發明可Μ包括可調整活冑氣體與原氣之間之喷嘴及 均句混合活躍氣體及原氣之電漿產生裝置。The present invention has therefore been proposed to solve the problem and it is an object of the present invention to provide a device for dispensing raw air as planned. The above-mentioned problems existing in the prior art, the plasma which can be uniformly adjusted by the nozzle to supply the raw gas, can be provided. The present invention can provide a kind of material which can be effectively transported to the treatment without being related to the live mist. Plasma generating device. The present invention can include a plasma generating device that can adjust a nozzle between a live gas and a raw gas, and a mixed gas and a raw gas.

本發明可提供有效地阻擋原氣與活躍氣體之間之 應。 久 。為了實現上述目的,根據本發明之一個態樣,提供—種 電漿產生裝置,該電漿產生裝置包括電漿產生單元、噴 頭、活躍氣體供應單元及原氣供應單元,原氣及活躍氣體 於计劃之位置上混合。配置於電漿產生單元之下部之噴 頭,喷頭與電漿產生單元一起提供電漿室,且包括上板妗 構及下板結構,由上板結構及下板結構上下結合而提供原 氣移動空間。尤其為上板結構及下板結構中之一者包括夕、 130887.doc 200901833 個導管’並進一步包括用以阻擋導管與兩個板中一者之間 之空隙之阻播壁。 導管一般形成於上板結構上’阻擋壁與下板結構一起形 成一個整體或者單獨地形成,以阻擋下板結構之貫穿孔與 導管之間之空隙,在另外—個實施例中導f形成於下板結 構上,j_阻擋②與上板結構一起形《一個整體或者單獨地 形成,以阻擋下板結構之貫穿孔與導管之間之空隙。The present invention provides an effective barrier between the raw gas and the active gas. Long . In order to achieve the above object, according to one aspect of the present invention, a plasma generating apparatus is provided, which includes a plasma generating unit, a showerhead, an active gas supply unit, and a raw gas supply unit, and the raw gas and the active gas are Mix the location of the plan. a nozzle disposed at a lower portion of the plasma generating unit, the nozzle and the plasma generating unit provide a plasma chamber, and includes an upper plate structure and a lower plate structure, and the upper plate structure and the lower plate structure are combined to provide the original gas movement space. One of the upper and lower plate structures, in particular, includes a catheter, and further includes a blocking wall for blocking the gap between the catheter and one of the two plates. The conduit is generally formed on the upper plate structure. The barrier wall is formed integrally or separately with the lower plate structure to block the gap between the through hole of the lower plate structure and the conduit. In another embodiment, the guide f is formed on In the lower plate structure, the j_block 2 is formed integrally with the upper plate structure "either integrally or separately to block the gap between the through hole of the lower plate structure and the duct.

本發月可包括夾在上板結構與下板結構之間之阻播板, 其中阻擋板上下分割原氣移動空間’並包括與預期之原氣 分布相應形成之導孔。 阻擋壁可與上板結構或下板結構形成—個整體,或者單 獨地形成後絲於㈣上,㈣止原氣及活躍氣體在除處 理物之外之地方上之先反應。 導官之下端安裝於比原氣喷霧口略高之上部部位。 為了實現上述目的,根據本發明之另外一個態樣,提供 一種電漿產生裝置’包括:電聚產生單元;配置於電漿產 “几之下部之喷頭,喷頭與電漿產生單元—起提供電聚 室’且包括向下形成之多個導管之上板結構及包括形成於 比導管略低之下端下部部位之多個原氣喷霧口之下板結 構,由上板結構及下板結構提供原氣移動空間,1令下板 ^構包括提供下板阻擋壁之噴頭,下板阻擋壁部分地圍繞 官之:部’除原_口外阻擋原氣移動空間;活躍氣 體供應單元,活躍氣體- ' 々牌 %體仏應早兀向電漿產生單元供應活躍 乳體;及原氣供應單元,原氣供應單元向在喷頭内之原氣 130887.doc 200901833 移動空間供應原氣。 所述之電漿產生裝置,進一步包括阻擋板,其中阻 $在上板結構與下板結構之間,從而上下分割原氣移^空 間,並包括與預期之原氣分布相應形成之導孔。 為了實現上述目的,根據本發明之另外_個態樣,提供 種电聚產生裝置’包括:電喂產 __ 冤漿產生早兀,配置於電漿產 ^早几之下部之喷頭’噴頭與電漿產生單元_起提供電激 且包括向下形成之多個導管之上板結構及包括多個原 :扣 < 下板、、"構,由上板結構及下板結構提供原氣移 工間’其中下板結構包括提供下板阻擋壁之噴頭,阻 土圍、”堯v官之外部;夾在上板結構與下板結構之間之阻^ 八p擋板上下分剎原氣移動空間,並包括與預期之原氣 !布相應形成之導孔;活躍氣體供應單元,活躍氣體供應 :几向電黎產生單凡供應活躍氣體;及原氣供應單元,原 氣:應單元向位於噴頭内之原氣移動空間供應原氣。 其中導官之下端安裝於比原氣喷霧口略高之上部部位。 【實施方式】 本發明特定示你丨祕^ 例丨生實鼽例將結合隨附圖式進行詳細說 明。 熟習此項技術者可理解,本制t巾所述^例性實施 例僅用以說明解釋’其可轉換或修改為不同形式。 圖3為展不根據本發明之一示例性實施例電漿產生裝置 之。·!視圖,且圖4為展示根據圖3噴頭之一部分切開之 圖。 130887.doc -10- 200901833 參考圖3及圖4’電漿產生裝置丨00包括電漿產生單元 110、噴頭150、阻擋壁178 '活躍氣體供應單元13〇及原氣 供應單元140。喷頭150及電漿產生單元11〇安裝於支撐單 兀120上,支撐單元12〇提供中間之孔,可使電漿產生單元 110所產生之電漿通過其孔運至處理物。 電毀產生單元110包括上電漿板112(upper plasma plate)、下電漿板 UYlower plasma plate)及空間板 116(spaCe plate)。上電漿板112及下電漿板114配置於上下 部,且孔或槽形成於上電漿板112及下電漿板114中,以成 為活躍氣體供應單元丨30及原氣供應單元14〇之氣體流路。 電漿產生單元110包括電漿產生電極118,電漿產生電極 118配置於下電漿板114之下部。活躍氣體自活躍氣體供應 單元130提供至電漿產生電極118之上部,多個孔形成於電 漿產生電極118上,以活躍氣體通過去電漿室。電漿產生 單元 110 可按照 ICP(Inductive c〇upled piasma)或 CCP(Capacitive Coupling Plasma)之方法產生電樂,諸如 RF電源可提供給電漿產生電極丨丨8。 可在下電漿板114之下部提供空間板116,空間板116使 下電漿板114及喷頭15〇之距離保持—定距離,以提供產生 電水至二間板11 6為絕緣材料,用於電漿產生單元丨丨〇及 噴頭1 50之電隔離。為此,利i絕緣材料形成空間板⑴或 者利用絕緣塗蓋使空間板116具有絕緣之特性。 士圖所不,於下部空間板116上可形成用於眉、氣供應單 兀14〇之氣體流路,藉由下部空間板ιΐ6,原氣供應單元 130887.doc -11 - 200901833 140可與喷頭150之周圍連接。The present month may include a blocking plate sandwiched between the upper plate structure and the lower plate structure, wherein the upper and lower divided original gas moving spaces are blocked, and the guide holes formed corresponding to the expected original gas distribution are included. The barrier wall may be formed integrally with the upper plate structure or the lower plate structure, or may be formed separately on the (4), and (4) the first reaction of the raw gas and the active gas at a place other than the treatment. The lower end of the guide is mounted above the upper portion of the original gas spray port. In order to achieve the above object, according to another aspect of the present invention, a plasma generating apparatus includes: an electropolymer generating unit; a nozzle disposed at a lower portion of the plasma product, a nozzle and a plasma generating unit Providing an electropolymer chamber' and including a plurality of duct upper plate structures formed downward and a plurality of raw gas spray port lower plate structures formed at a lower portion of the lower end than the duct, the upper plate structure and the lower plate The structure provides the original gas moving space, 1 the lower plate structure includes a nozzle for providing the lower plate blocking wall, and the lower plate blocking wall partially surrounds the official part: the part 'except the original_mouth blocking the original gas moving space; the active gas supply unit is active Gas - ' 々 % 仏 仏 仏 供应 供应 供应 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电The plasma generating device further includes a blocking plate, wherein the resistance is between the upper plate structure and the lower plate structure, thereby dividing the original gas moving space up and down, and including a guide formed corresponding to the expected original gas distribution. In order to achieve the above object, according to another aspect of the present invention, an electropolymer generating device is provided, which includes: an electric feeding __ 冤 产生 产生 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 兀 ' ' ' ' ' ' ' ' ' ' ' ' The nozzle and the plasma generating unit provide a plurality of conduit upper plate structures and include a plurality of original: buckles; lower plate, "structure, provided by the upper plate structure and the lower plate structure The original gas shifting room's lower plate structure includes a nozzle for providing a lower plate blocking wall, a soil blocking fence, and an outer portion of the 尧v officer; a resistance sandwiched between the upper plate structure and the lower plate structure The brake gas moves the space and includes a guide hole formed corresponding to the expected original gas! cloth; an active gas supply unit, an active gas supply: a plurality of active gas supplies to the electricity supply; and a raw gas supply unit, the original gas: The unit should supply the raw gas to the raw gas moving space located in the nozzle. The lower end of the guide is installed at a position slightly higher than the original gas spray port. [Embodiment] The present invention is described in detail with reference to the accompanying drawings. It will be understood by those skilled in the art that the exemplary embodiments of the present invention are merely illustrative of the fact that they can be converted or modified into different forms. Fig. 3 is a view showing a plasma generating apparatus which is not according to an exemplary embodiment of the present invention. The view is shown in Fig. 3, and Fig. 4 is a view showing a partial cut of the head according to Fig. 3. 130887.doc -10- 200901833 Referring to Figures 3 and 4', the plasma generating apparatus 丨00 includes a plasma generating unit 110, a showerhead 150, a barrier wall 178' active gas supply unit 13A, and a raw gas supply unit 140. The nozzle 150 and the plasma generating unit 11 are mounted on the supporting unit 120, and the supporting unit 12 is provided with a hole in the middle, so that the plasma generated by the plasma generating unit 110 can be transported to the workpiece through the hole. The electric power generation unit 110 includes an upper plasma plate 112, a lower plasma plate (UYlower plasma plate), and a space plate 116 (spaCe plate). The upper plasma plate 112 and the lower plasma plate 114 are disposed on the upper and lower portions, and the holes or grooves are formed in the upper plasma plate 112 and the lower plasma plate 114 to become the active gas supply unit 30 and the raw gas supply unit 14 The gas flow path. The plasma generating unit 110 includes a plasma generating electrode 118, and the plasma generating electrode 118 is disposed under the lower plasma plate 114. The active gas is supplied from the active gas supply unit 130 to the upper portion of the plasma generating electrode 118, and a plurality of holes are formed in the plasma generating electrode 118 to pass the active gas through the plasma removing chamber. The plasma generating unit 110 can generate electric music in accordance with an ICP (Inductive c〇upled piasma) or CCP (Capacitive Coupling Plasma) method, such as an RF power source, which can be supplied to the plasma generating electrode 8 . A space plate 116 may be provided at a lower portion of the lower plasma plate 114. The space plate 116 maintains the distance between the lower plasma plate 114 and the shower head 15 at a fixed distance to provide electric water to the two plates 116 as an insulating material. Electrically isolated from the plasma generating unit 丨丨〇 and the shower head 150. For this reason, the insulating material forms the space plate (1) or the insulating plate is used to make the space plate 116 have an insulating property. The gas flow path for the eyebrow and gas supply unit 14兀 can be formed on the lower space plate 116, and the raw gas supply unit 130887.doc -11 - 200901833 140 can be sprayed with the lower space plate ΐ6 The head 150 is connected around.

噴頭⑽包括上板結構16〇及下板結構1?〇。上板結構16〇 形成為圓盤形或其他盤形,並包括向下凸出之導管162。 導管_ 彡成為上下貫穿之形狀’提供活躍氣體喷霧口 163。藉由活躍氣體噴霧σ ί63可將電漿傳送至喷頭之 下部,在傳送過程中,電衆可轉換為離子或自由基。下板 結構安裝於上板結構⑽之下部,並包括與導管⑹相々之 J板貫穿孔m及原氣嘴霧σ174。藉由下板貫穿孔172導 管162之下端往喷頭15〇之下部露出原氣噴霧口⑺形成 ,下板貫穿孔172之周圍,即導管162之周圍,可喷霧原 戚i 〇 尤其為,在下板貫穿孔m之周圍往上形成阻播壁H 阻擋壁178與導管162之形狀相應地形成為圓筒形,阻擋壁 78之*内邛形成為具有與導管162之外部接觸之相同大小或 比導f 162之外部略大之大小。原氣移動空間被阻擒壁⑺The nozzle (10) includes an upper plate structure 16 〇 and a lower plate structure 1 〇. The upper plate structure 16A is formed in a disc shape or other disc shape, and includes a duct 162 that protrudes downward. The conduit _ 彡 is a shape that penetrates up and down to provide an active gas spray port 163. The plasma can be delivered to the lower part of the spray head by the active gas spray σ ί63, which can be converted to ions or free radicals during transport. The lower plate structure is mounted on the lower portion of the upper plate structure (10) and includes a J plate through hole m and an original nozzle mist σ 174 which are opposite to the pipe (6). The lower end of the lower plate through hole 172 is formed by the lower end of the nozzle 162 exposing the raw gas spray port (7), and the lower plate is penetrated around the hole 172, that is, around the pipe 162, and the spray can be sprayed. The blocking wall H is formed upwardly around the lower plate through hole m. The blocking wall 178 and the shape of the duct 162 are formed in a cylindrical shape, and the inner bore of the blocking wall 78 is formed to have the same size or ratio as the outer contact of the duct 162. The outside of the guide f 162 is slightly larger. The original moving space is blocked by the wall (7)

與外部完全隔離,可防止因導管162及下板貫穿孔17 之空隙氣體流入流出。 一圖所示,若原氣被原氣供應單元140供應至噴頭丨5〇 裏+貝!原氣可藉由在下板結構17〇之基部形成之噴霧口 174 被嘴霧m原氣與活躍氣體之離子一&在處理物上形 成溥膜。原氣噴霧口 174形成於下板貫穿孔172或阻 178之間,甘知θ 强立 /、數1及大小按照設計者之意圖可形成為多種 多樣。 參考圖4,原氣供應單元14〇沿著喷頭150之外部以相同 130887.doc •12· 200901833 門P同連接’自外部提供原氣。自原氣供應單元140供應之 原氣藉由t板結構16G之外部被供應至喷頭裏,自周圍 :、…之原氣暫時留在原氣移動空間後藉由原氣喷霧口 1 往下板結構170之下部被噴霧。 圖5為展示根據本發明之另—示例性實施例電漿產生裝 置之剖視圖。 在下述之實施例中除噴頭外之構成要素與圖3及圖4中之 構成要素相同,而對於相同構成要素利用相同之參考標 號’則省略其重複說明。 參考圖5’ f毁產生袭置1〇〇包括電聚產生單元ιι〇、喷 頭250、阻擋環278、活躍氣體供應單元13〇及原氣供應單 兀140噴頭250及電漿產生單元u〇安裝於支撐單元丨2〇 上’支樓單元120提供中間孔,電聚產生單元n〇所形成之 電漿通過中間孔可傳送至處理物處。 電聚產生單元11〇包括上電漿板112、下電漿板ιΐ4、空 間板116,其中上電漿板112及下電漿板114上下配置。上 電漿板112及下電漿板114上形成詩活躍氣體供應單元 130及原氣供應單元14〇之氣體流路之孔或槽。電漿產生單 元no包括電漿產生電極218,離子體產生電極218被供應 活躍氣體而形成電漿。 在下板貫穿孔272之附近導管162之周圍提供上阻擋環 278。最佳利用與活躍氣體及原氣不反應之材料製成阻擋 環278’其阻擋環278安裝於導管162之外部而防止活躍氣 體離子或自由基流入至喷頭250裏’並且防止原氣流出至 130887.doc -13- 200901833 導管162及貫穿孔272之間之空隙。進-步,阻擋環頂可 防止活躍氣體及原氣在未計劃之地方之先反應。除此之 外,阻擋環並非僅侷限於環形,也可形成為其他形狀,並 且作為與導管-體形成之凸部阻擋環可發揮阻擋壁之作 用0 圖6為展示根據本發明之另 _ . , _ S乃又另—不例性實施例之電漿產生 裝置之剖視圖’圖7為展示根撼岡 <也55 、 敬丁很據圖6喷頭之一部分切開之俯 視圖。Completely isolated from the outside, it is possible to prevent the inflow and outflow of the air in the gap between the duct 162 and the lower plate through hole 17. As shown in the figure, if the raw gas is supplied to the nozzle 丨5〇+Bei by the raw gas supply unit 140, the raw gas can be blown by the spray port 174 formed at the base of the lower plate structure 17〇. Ion-& forms a ruthenium film on the treated material. The raw gas spray port 174 is formed between the lower plate through hole 172 or the resistor 178, and it is known that θ is strong /, the number 1 and the size can be formed into various types according to the intention of the designer. Referring to Fig. 4, the raw gas supply unit 14 is supplied with the same atmosphere from the outside along the outside of the shower head 150 by the same 130887.doc • 12· 200901833. The raw gas supplied from the raw gas supply unit 140 is supplied to the nozzle through the outside of the t-plate structure 16G, and the original gas from the surroundings: ... is temporarily left in the original gas moving space, and is descended by the raw gas spray port 1 The lower portion of the plate structure 170 is sprayed. Figure 5 is a cross-sectional view showing a plasma generating apparatus in accordance with another exemplary embodiment of the present invention. In the following embodiments, the components other than the head are the same as those in Figs. 3 and 4, and the same reference numerals are used for the same components, and the repetitive description thereof will be omitted. Referring to FIG. 5'f, the destruction occurs, including the electro-polymerization unit ιι, the nozzle 250, the barrier ring 278, the active gas supply unit 13 and the raw gas supply unit 140, and the plasma generating unit u〇. Mounted on the support unit 丨2〇, the branch unit 120 provides an intermediate hole, and the plasma formed by the electropolymerization unit n〇 can be transported to the processing object through the intermediate hole. The electro-polymerization unit 11 includes an upper plasma plate 112, a lower plasma plate ι 4, and a space plate 116, wherein the upper plasma plate 112 and the lower plasma plate 114 are disposed above and below. Holes or grooves of the gas flow path of the poetic active gas supply unit 130 and the raw gas supply unit 14 are formed on the upper plasma plate 112 and the lower plasma plate 114. The plasma generating unit no includes a plasma generating electrode 218, and the ion generating electrode 218 is supplied with an active gas to form a plasma. An upper barrier ring 278 is provided around the conduit 162 adjacent the lower plate through hole 272. The barrier ring 278' is preferably made of a material that does not react with the active gas and the raw gas. The barrier ring 278 is attached to the outside of the conduit 162 to prevent active gas ions or radicals from flowing into the showerhead 250 and prevents the original airflow from flowing out. 130887.doc -13- 200901833 The gap between the conduit 162 and the through hole 272. Step-by-step, blocking the top of the ring prevents active gases and raw gases from reacting unplanned. In addition, the barrier ring is not limited to the ring shape, but may be formed in other shapes, and functions as a barrier wall as a convex barrier ring formed with the catheter body. FIG. 6 is a view showing another aspect of the present invention. Fig. 7 is a plan view showing a portion of the head of the nozzle of Fig. 6 in accordance with Fig. 6 in a sectional view of Fig. 7;

在下述實施例中除噴頭以外之構成要素與圖3及圖4中之 構成要素相同,而對於相同構成要素利用㈣之參考標 號’則省略其重複說明。 參考圖6及圖7,電漿產生裝置1〇〇包括電漿產生單元 11〇二喷頭350、阻擋板380、活躍氣體供應單元130及原氣 供應單兀140。喷頭350包括上板結構16〇、下板結構37〇及 阻撞板3 8 0。 —若原氣被原氣供應單元14()供應至噴頭35()裏,則原氣可 藉由阻擋板380向喷霧口 374被噴霧。 阻擋板3 80夾在上板結構丨6〇與下板結構37〇之間。阻擋 板380將在上板結構16〇與下板結構之間形成之原氣移 動空間上下分割,調整原氣只能通過指定之通道,即導孔 386 °又计者可選擇導孔386之位置,為均勻分配原氣或者 滿足其他條件,或者在集中供應原氣時,可調整導孔3 86 之位置及數置。在本發明之實施例中導孔主要形成於 、頭0之中〜’所以原氣在移動空間中往中心移動,主 130887.doc -14- 200901833 要被供應至中心以防止中心薄膜比較薄之現象。 參考圖7,來自原氣供應單元14〇之原氣通過上板結構 160之外部供應給噴頭35〇裏,自周圍供應之原氣為經過在 阻擋板380中心形成之導孔386往中心積聚。藉由導孔刊6 供應之原氣在阻擋板38〇之下部均勻地供應,原氣藉由下 板結構370之原氣喷霧口 374被均勻分配。 在阻擋板380上形成用以貫穿導管162之中間貫穿孔 M2,導管162藉由中間貫穿孔382及下板貫穿孔372往喷頭 350之下部露出。按照設計人之意圖,可調整露出之導管 362之南度。 圖8為展示根據本發明之另一示例性實施例之電漿產生 裝置之剖視圖,圖9為展示根據圖8喷頭之一部分切開之俯 視圖。 在下述之實施例中除噴頭以外之構成要素與圖3及圖4中 之構成要素相同,而對於相同構成要素利用相同之參考標 號,則省略其重複說明。 參考圖8及圖9,電漿產生裝置1〇〇包括電漿產生單元 410、喷頭450、阻擋板480、活躍氣體供應單元13〇及原氣 供應單元140。噴頭450及電漿產生單元11〇安裝於支撐單 元120上,支撐單元i 2〇提供中間孔,可使電漿產生單元 110所產生之電漿通過孔運至處理物。 噴頭450包括上板結構460、下板結構47〇及阻擋板48〇。 如圖所不,若原氣被原氣供應單元14〇供應至噴頭45〇 晨,則原氣可經過阻擋板480後藉由原氣噴霧口 474被喷 130887.doc -15- 200901833 上板結構160與下板結構47〇之 管486往下板結構47〇移動,可先 霧。因為阻擋板480失在 間,所以原氣只能通過導 供應給中心。 藉由導孔486供應之原氣在阻播板480之下部均句 應,藉由下板結構470之原氣噴霧口 474均句地嘴霧原 所以在處理物上可薄膜形成為具有均句之厚度。’、 地供 氣, 在阻擋板480上形成用以貫穿導管162之中間貫穿孔The constituent elements other than the head in the following embodiments are the same as those in Figs. 3 and 4, and the same reference numerals are used for the same constituent elements, and the repeated description thereof will be omitted. Referring to FIGS. 6 and 7, the plasma generating apparatus 1 includes a plasma generating unit 11 and a second nozzle 350, a blocking plate 380, an active gas supply unit 130, and a raw gas supply unit 140. The showerhead 350 includes an upper plate structure 16A, a lower plate structure 37A, and a blocking plate 380. - If the raw gas is supplied to the head 35 () by the raw gas supply unit 14 (), the raw gas can be sprayed toward the spray port 374 by the blocking plate 380. The blocking plate 380 is sandwiched between the upper plate structure 丨6〇 and the lower plate structure 37〇. The blocking plate 380 divides the original gas moving space formed between the upper plate structure 16 〇 and the lower plate structure up and down, and adjusts the original gas only through the designated passage, that is, the guide hole 386 ° and the position of the guide hole 386 can be selected. In order to evenly distribute the raw gas or meet other conditions, or to supply the raw gas in a concentrated manner, the position and number of the guide holes 3 86 can be adjusted. In the embodiment of the present invention, the via hole is mainly formed in the head 0~' so the original gas moves to the center in the moving space, and the main 130887.doc -14-200901833 is to be supplied to the center to prevent the center film from being thinner. phenomenon. Referring to Fig. 7, the raw gas from the raw gas supply unit 14 is supplied to the head 35 through the outside of the upper plate structure 160, and the raw gas supplied from the periphery is accumulated toward the center through the guide hole 386 formed at the center of the blocking plate 380. The raw gas supplied by the guide hole 6 is uniformly supplied under the baffle plate 38, and the raw gas is evenly distributed by the raw gas spray port 374 of the lower plate structure 370. The intermediate through hole M2 for penetrating the duct 162 is formed in the blocking plate 380, and the duct 162 is exposed to the lower portion of the head 350 through the intermediate through hole 382 and the lower plate through hole 372. The south of the exposed conduit 362 can be adjusted as intended by the designer. Figure 8 is a cross-sectional view showing a plasma generating apparatus according to another exemplary embodiment of the present invention, and Figure 9 is a plan view showing a partially cutaway portion of the head according to Figure 8. In the following embodiments, the components other than the head are the same as those in FIGS. 3 and 4, and the same reference numerals are used for the same components, and the description thereof will not be repeated. Referring to Figs. 8 and 9, the plasma generating apparatus 1A includes a plasma generating unit 410, a shower head 450, a blocking plate 480, an active gas supply unit 13A, and a raw gas supply unit 140. The nozzle 450 and the plasma generating unit 11 are mounted on the supporting unit 120, and the supporting unit i 2 is provided with an intermediate hole through which the plasma generated by the plasma generating unit 110 is transported to the processed object. The showerhead 450 includes an upper plate structure 460, a lower plate structure 47〇, and a blocking plate 48〇. As shown in the figure, if the raw gas is supplied to the nozzle 45 by the raw gas supply unit 14〇, the raw gas can be sprayed through the barrier 480 and then sprayed through the raw gas spray port 474. 130887.doc -15-200901833 upper plate structure 160 The tube 486 with the lower plate structure 47 is moved to the lower plate structure 47, and the mist can be first. Since the blocking plate 480 is lost, the raw gas can only be supplied to the center through the guide. The raw gas supplied through the guide hole 486 is in the lower part of the obstruction plate 480, and the raw gas spray port 474 of the lower plate structure 470 is uniformly formed on the treated object so that the film can be formed into a uniform sentence on the treated object. The thickness. ', the ground supply air, forming a through hole in the middle of the blocking plate 480 for penetrating the conduit 162

482,在中間貫穿孔482之周圍上可形成用以圍繞導管ία 周圍之中間阻擔壁488。導管⑹藉由中間阻擋壁彻及下 板阻撞壁478可往喷頭450之下部露出。中間阻擔壁似可 防止原氣藉由阻播板_及導f 462之間之空隙傳送至下板 結構470之現象。 圖10為展示根據本發明之另 裝置之剖視圖。 一示例性實施例之電漿產生 在下述之實施例中除喷頭以外之構成要素與圖3及圖4中482, an intermediate resistive wall 488 surrounding the conduit ία may be formed around the intermediate through-hole 482. The conduit (6) can be exposed to the lower portion of the showerhead 450 by the intermediate barrier wall and the lower panel barrier wall 478. The intermediate barrier wall may prevent the phenomenon that the raw gas is transferred to the lower plate structure 470 by the gap between the blocking plate _ and the guide f 462. Figure 10 is a cross-sectional view showing another apparatus in accordance with the present invention. Plasma generation of an exemplary embodiment In the following embodiments, constituent elements other than the shower head are shown in Figs. 3 and 4

之構成要素㈣,而對於相同構成要素利用相同之參考標 號’則省略其重複說明。 參考10’電襞產生裝置⑽包括電漿產生單元11〇、喷頭 550活躍氣體供應單元13〇及原氣供應單元。 喷頭550包括導官162、原氣移動空間及原氣喷霧口 導g 162形成為上下貫穿之,形狀,以提供活躍氣體喷 霧口⑹。電聚藉由活躍氣體喷霧口⑹傳送至喷頭別之 下部,在傳送過程中電漿可轉換為離子或自由基。在導管 162之下部提供喷嘴空間164,導管⑹之内部空間及喷嘴 130887.doc • 16 · 200901833 空間164提供活躍氣體噴霧口 l63。 導官162之下端位於比原氣喷霧口⑺略高之上部部位。 因此原氣開始噴霧於比活躍氣體略低之位置上,雖缺原氣 供應量較少,但不被活躍氣體妨礙而影響其進行,因此; 有效地到達處理物。 若原氣被原氣供應單元14〇供應給噴頭5叫,則原氣藉 由在下板結構570之基部形成之原氣噴霧口 574噴霧。噴^ 之原氣與活躍氣體一起形成處理物上之薄膜。 圖η為展示根據本發明之另—示錄實施例之電浆產生 裝置之剖視圖,圖12為展示根據圖u噴頭之—部分切開之 俯視圖。 在下述之實施例中除喷頭以外之構成要素與圖3及圖4中 之構成要素相同,而對於相同構成要素利用相同之參考標 號,則省略其重複說明。 參考圖η及圖12,電漿產生裝置100包括電漿產生單元 110、噴頭650、活躍氣體供應單元13〇及原氣供應單元 140。噴頭650及電漿產生單元11〇安裝於支撐單元12〇上。 喷頭6 5 0包括上板結構16 0及下板結構6 7 〇。 在下板結構670中原氣噴霧口 674安裝於比導管162略低 之下部部位。所以自原氣喷霧口 674噴霧之原氣開始噴霧 於比活躍氣體略低之下部部位上,雖然原氣供應量較少, 但不被活躍氣體妨礙而影響其進行,因此可有效地到達處 理物。 並且’下板阻擋壁678之内徑比導管ι62之内徑更大,所 130887.doc 200901833 以在下板貫穿孔之周圍,即導管162之下部可形成較大之 喷嘴空間164。下板阻擋壁678與導管162之形狀相應地形 成為圓筒形,下板阻擋壁678之内部形成為具有與導管162 之外部接觸之相同之大小或比此略大之大小。尤其為下板 阻擋壁678圍繞導管162及下部外部,所以可阻擋噴頭65〇 内部之原氣移動空間652。阻擋壁678可防止藉由活躍氣體 噴霧口 163喷霧之活躍氣體離子及原字團流入至喷頭65〇 晨,並防止活躍氣體及原氣在未計劃之地方之先反應。 其中阻擋壁678並非僅侷限於使原氣移動空間與外部隔 離之用途,而成為可使原氣噴霧口 674位於在比導管丨62之 下端略低之下部部位之結構。為了原氣喷霧口 674位於在 比導g 62之下端略低之下部部位,下板阻擋壁678形成為 匕導g 162更長且被安裝之同時,上板結構i 6〇及下板結構 67〇形成為以一定距離隔離。 其在本發明之實施财’ f管形成於上板結構i,有時導 曰在下板結構上,且上板結構上提供貫穿孔。此時,導 管之下端及原氣喷霧口<間可形成一定高度$,以在導管 之下部提供喷嘴空間。 圖1 3為展不根據本發明之另一示例性實施例之電漿產生 裝置之口"見圖’圖14為展示根據圖13喷頭之一部分切開之 俯視圖。 下述之實細^例中除喷頭以外之構成要素與圖3及圖4中 ,構成要素相同,而對於相同構成要素利用相同之參考標 號’則省略其重複說明。 130887.dc 200901833 參考圖13及圖14,f聚產生裝置!⑽包括電浆產生單元 11〇、噴頭750、阻播板彻、活躍氣體供應單元13()及原氣 供應單元14 0。 喷頭750包括上板結構丨6〇及下板結構77〇。 在下板結構770中原氣喷霧口 774安裝於比導管162略低 之下部部位。所以原氣開始噴霧於比活躍氣體略低之下部 部位上’ |然原氣供應量較少,但不被活躍氣體妨礙而影 響其進行,因此可有效地到達處理物。其結果為沒有原氣 之浪費,可獲得良好之薄膜,且防止因原氣消盡而引起之 薄膜惡化。 下板阻擒壁778之内徑比導管162之内徑更大,所以在下 板貫穿孔之周® ’即導管162之下部可形成較大之喷嘴空 間164。噴嘴空間向下形成’具體為形成為心形或與樓 梯相似擴大之圓筒形,氣體自導管162喷霧,藉由喷 嘴空間764可放寬«,所以可與原氣有效地混合/、 下板阻撞壁778與導管162之形狀相應地形成為圓筒形, 下板阻擋壁778之内部形成為具有與導管162之外部接觸之 相同大小或比此略大之大小。尤其為下板阻擔壁Μ圍繞 =162及下部外部,所以可阻擋噴頭75_部之原 空間752。阻擋壁778可防止活躍氣體噴霧口⑹所喷霧之 二躍乳體離子及原字團流入至嘴頭75〇裏,並防止活躍氣 體及原氣在未計劃之地方之先反應。 ’、 丄如圖所心若原氣被原氣供應單元u〇供應至噴頭750 晨’則原氣可㈣㈣板78()後藉由原氣喷霧口川被喷 130887.doc -19- 200901833 霧。因為原氣嗔霧口 774夾在上板結構160與下板結構77〇 之間’所以m通過導f 786往下板結構77g移動,可 先供應給中心。 藉:導孔786供應之原氣在阻擋板78〇之下部均勻地供 應’错由下板結構770之原氣噴霧口 774均勻地噴霧原氣, 所以在處理物上薄膜形成為具有均勻之厚度。 在阻搶板780上形成用以貫穿導管162之中間貫穿孔,在 中間貫穿孔之周圍上可形成用以圍繞導管162周圍之令間 阻搶壁788 °導管162藉由中間阻擋壁⑽及下板阻擋壁768 可往噴頭750之下部露出。中間阻擋壁谓可防止原氣藉由 P播板78G及導皆162之間之空隙傳送至下板結構"ο之現 象。 ,發明之電漿產生裝置’藉由喷頭供應原氣可均勻分配 原氣’進而按照計劃能調整原氣分配。 本發明之電聚產生裝置可使原氣及活躍氣體僅在處理物 ^反應,防止在未計劃之地方上反應,即在導管之出口或 喷頭内等反應。所以可預防原氣之浪f,以提高處 之品質。 本發明之電滎產生裝置藉由阻擋壁之高度調整可調整原 氣及活躍氣體嘴霧σ之間之距離,以獲得將 氣利用及反應之最佳條件。 及原 儘管已參照其特定示例性實施例展示及描述本發明,但 熟習此項技術者應理解,在不脫離由中請專利範圍界定之 本發明之精神及料之情況下,可對其作出形式及細節上 130887.doc -20- 200901833 各種改變。因此,熟習此項技術者在本發明之範圍内可 基於本發明之原則進行各種變化及修改。 【圖式簡單說明】 圖1為展示習知之電漿產生裝置之示意圖; 圖2為展示為說明圖1所示之η 从上故 口 ΠΤ 丁之導官及下板結構之關係之 大部分之剖面圖; ’ 示例性實施例電漿產生裝 圖3為展示根據本發明之—個 置之剖視圖; 裝 邹分切開之俯視圖; '示例性實施例電漿產生The constituent elements (4) are the same as those of the same constituent elements, and the repeated description thereof will be omitted. The reference 10' electric power generating device (10) includes a plasma generating unit 11A, a head 550 active gas supply unit 13A, and a raw gas supply unit. The head 550 includes a guide 162, a raw gas moving space, and a raw gas spray port guide 162 formed in a shape that is vertically penetrated to provide an active gas spray port (6). The electropolymer is transferred to the lower part of the nozzle by the active gas spray port (6), and the plasma can be converted into ions or radicals during the transfer. A nozzle space 164 is provided below the conduit 162, the interior of the conduit (6) and the nozzle 130887.doc • 16 · 200901833 The space 164 provides an active gas spray port l63. The lower end of the guide 162 is located slightly above the original gas spray port (7). Therefore, the raw gas starts to be sprayed at a position slightly lower than the active gas, and although the shortage of the raw gas supply is small, it is not hindered by the active gas and is affected, so that the processed material is efficiently reached. If the raw gas is supplied to the nozzle 5 by the raw gas supply unit 14A, the raw gas is sprayed by the raw gas spray port 574 formed at the base of the lower plate structure 570. The raw gas of the spray together with the active gas forms a film on the treated material. Figure η is a cross-sectional view showing a plasma generating apparatus according to another embodiment of the present invention, and Figure 12 is a plan view showing a partial cut of the head according to Figure u. In the following embodiments, the components other than the head are the same as those in FIGS. 3 and 4, and the same reference numerals are used for the same components, and the description thereof will not be repeated. Referring to FIG. 11 and FIG. 12, the plasma generating apparatus 100 includes a plasma generating unit 110, a head 650, an active gas supply unit 13A, and a raw gas supply unit 140. The shower head 650 and the plasma generating unit 11 are mounted on the support unit 12A. The nozzle 650 includes an upper plate structure 16 0 and a lower plate structure 6 7 〇. In the lower plate structure 670, the raw gas spray port 674 is installed at a lower portion than the conduit 162. Therefore, the raw gas sprayed from the raw gas spray port 674 is sprayed on the lower portion than the active gas. Although the raw gas supply is small, it is not hindered by the active gas, so it can be effectively processed. Things. And the inner diameter of the lower plate blocking wall 678 is larger than the inner diameter of the pipe ι 62, so that a larger nozzle space 164 can be formed around the lower plate through hole, that is, the lower portion of the pipe 162. The lower plate blocking wall 678 is formed in a cylindrical shape corresponding to the shape of the duct 162, and the inside of the lower plate blocking wall 678 is formed to have the same size as or slightly larger than the outer contact of the duct 162. In particular, the lower plate blocking wall 678 surrounds the conduit 162 and the lower outer portion so that the raw gas moving space 652 inside the shower head 65A can be blocked. The barrier wall 678 prevents active gas ions and the original clusters sprayed by the active gas spray port 163 from flowing into the shower head 65 and prevents the active gas and the raw gas from reacting in an unplanned place. The barrier wall 678 is not limited to the use for separating the original moving space from the outside, and the raw air spray port 674 is located at a lower portion than the lower end of the duct 62. In order that the raw gas spray port 674 is located at a lower portion than the lower end of the guide g 62, the lower plate barrier wall 678 is formed such that the guide g 162 is longer and is mounted while the upper plate structure i 6 〇 and the lower plate structure 67〇 is formed to be isolated at a certain distance. It is formed in the upper plate structure i in the implementation of the present invention, and is sometimes guided on the lower plate structure, and a through hole is provided in the upper plate structure. At this time, a certain height can be formed between the lower end of the conduit and the raw gas spray port to provide a nozzle space at the lower portion of the conduit. Fig. 13 is a view showing a plasma generating apparatus according to another exemplary embodiment of the present invention. Fig. 14 is a plan view showing a portion of the head according to Fig. 13 cut away. In the following, the components other than the heads are the same as those in FIGS. 3 and 4, and the same reference numerals are used for the same components, and the description thereof will not be repeated. 130887.dc 200901833 Referring to Figures 13 and 14, the f-generation device! (10) A plasma generating unit 11A, a head 750, a blocking plate, an active gas supply unit 13 (), and a raw gas supply unit 140 are included. The showerhead 750 includes an upper plate structure 丨6〇 and a lower plate structure 77〇. In the lower plate structure 770, the raw gas spray port 774 is installed at a lower portion than the conduit 162. Therefore, the raw gas starts to be sprayed on the lower portion than the active gas. However, the raw gas supply is small, but it is not hindered by the active gas, so that the treatment can be efficiently reached. As a result, there is no waste of the original gas, a good film can be obtained, and the deterioration of the film due to the exhaustion of the original gas can be prevented. The inner diameter of the lower plate baffle wall 778 is larger than the inner diameter of the conduit 162, so that a larger nozzle space 164 can be formed in the lower portion of the lower plate through hole, i.e., below the conduit 162. The nozzle space is formed downwardly. Specifically, it is formed into a heart shape or a cylindrical shape similar to that of a staircase. The gas is sprayed from the duct 162, and the nozzle space 764 can be widened, so that it can be effectively mixed with the original gas. The barrier wall 778 is formed in a cylindrical shape corresponding to the shape of the duct 162, and the inside of the lower panel barrier wall 778 is formed to have the same size or slightly larger than the outer contact of the duct 162. In particular, the lower plate resists the wall Μ around the 162 and the lower outer portion, so that the original space 752 of the nozzle 75_ can be blocked. The barrier wall 778 prevents the dioxoderm ions and the original cluster sprayed by the active gas spray port (6) from flowing into the mouth 75 , and prevents the active gas and the raw gas from reacting in an unplanned place. ', 丄 所 所 被 被 被 被 被 被 被 被 被 被 被 被 750 750 750 750 750 750 750 750 750 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , . Since the original air mist port 774 is sandwiched between the upper plate structure 160 and the lower plate structure 77, the m moves through the guide f 786 to the lower plate structure 77g, and can be supplied to the center first. The original gas supplied from the guide hole 786 uniformly supplies the original gas spray port 774 of the lower plate structure 770 evenly under the baffle plate 78, so that the film is formed to have a uniform thickness on the treated object. . An intermediate through hole for penetrating the conduit 162 is formed on the blocking plate 780, and a periphery of the intermediate through hole is formed to surround the conduit 162 around the conduit 162. The conduit 162 is passed through the intermediate barrier wall (10) and the lower portion. The plate blocking wall 768 can be exposed to the lower portion of the showerhead 750. The intermediate barrier wall prevents the original air from being transmitted to the lower plate structure by the gap between the P-board 78G and the guide 162. Invented plasma generating apparatus 'the original gas can be uniformly distributed by supplying the raw gas to the nozzle, and the original gas distribution can be adjusted as planned. The electropolymerization device of the present invention allows the raw gas and the active gas to react only in the treated material to prevent the reaction from being carried out in an unplanned place, i.e., at the outlet of the conduit or in the spray head. Therefore, the wave of original gas can be prevented to improve the quality of the place. The electric power generating device of the present invention can adjust the distance between the raw gas and the active gas nozzle mist σ by adjusting the height of the barrier wall to obtain optimum conditions for gas utilization and reaction. And the present invention has been shown and described with respect to the specific exemplary embodiments thereof, and it is understood by those skilled in the art that the invention may be made without departing from the spirit and scope of the invention as defined by the scope of the invention. Forms and details on 130887.doc -20- 200901833 Various changes. Therefore, various changes and modifications can be made by those skilled in the art based on the principles of the invention within the scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a conventional plasma generating apparatus; Fig. 2 is a view showing a majority of the relationship between the guide and the lower plate structure of the η from the top of the mouth shown in Fig. 1. FIG. 3 is a cross-sectional view showing a mounting according to the present invention; a top view of a cut-away; 'exemplary embodiment plasma generation

圖4為展示根據圖3喷頭之一 圖5為展示根據本發明之另 置之剖視圖; 圖6為展示根據本發明之另 置之剖視圖; 圖7為展示根據圖6噴頭之— 圖8為展示根據本發明之另 置之剖視圖; 圖9為展示根據圖8噴頭之— 圖10為展示根據本發明之另 置之剖視圖; 部分切開之俯視圖; —示例性實施例電漿產生 —示例性實施例電漿產生裝 部分切開之俯視圖; 一示例性實施例電漿產生Figure 4 is a cross-sectional view showing another embodiment of the present invention according to Figure 3; Figure 6 is a cross-sectional view showing another embodiment according to the present invention; Figure 7 is a view showing the head according to Figure 6 - Figure 8 is FIG. 9 is a cross-sectional view showing another portion according to the present invention; a partially cut top view; an exemplary embodiment plasma generation - an exemplary implementation; FIG. A top view of a portion of a plasma-generating portion; an exemplary embodiment of plasma generation

示例性實施例電漿產生裝 圖11為展示根據本發明之另 置之剖視圖; 圖12為展示根據圖11喷頭之 圖13為展示根據本發明之另 置之剖視圖; -部分切開之俯視圖; 一示例性實施例電漿產生裝 130887.doc 21 200901833 圖14為展示根據圖13喷頭之一部分切開之俯視圖 【主要元件符號說明】 10 電漿產生單元 12 上電漿板 14 下電漿板 18 電漿產生電極 30 供應單元 40 原氣供應單元 50 喷頭 60 上板結構 62 導管 63 活躍氣體喷霧口 70 下板結構 74 原氣喷霧口 100 電漿產生裝置 110 電漿產生單元 112 上電漿板 114 下電漿板 116 空間板 118 電漿產生電極 120 支撐單元 130 活躍氣體供應單元 140 原氣供應單元 150 喷頭 130887.doc -22· 200901833 160 上板結構 162 導管 163 活躍氣體喷霧口 170 下板結構 172 下板貫穿孔 174 原氣喷霧口 178 阻擋壁 272 貫穿孔 278 上阻擋環 250 噴頭 350 喷頭 380 阻擋板 370 下板結構 372 下板貫穿孔 382 中間貫穿孔 386 導孔 374 原氣喷霧口 410 電漿產生單元 450 喷頭 470 下板結構 474 原氣噴霧口 478 下板阻擋壁 480 阻擋板 482 中間貫穿孔 130887.doc -23 - 200901833 486 導管 488 中間阻擋壁 550 喷頭 552 原氣移動空間 574 原氣喷霧口 650 喷頭 652 原氣移動空間 670 下板結構 674 原氣喷霧口 678 下板阻擋壁 750 喷頭 752 原氣移動空間 770 下板結構 774 原氣喷霧口 778 下板阻擋壁 780 阻擋板 786 導管 788 中間阻擋壁 G 微空隙 130887.doc -24-1 is a cross-sectional view showing another embodiment according to the present invention; FIG. 12 is a cross-sectional view showing another embodiment according to the present invention; An exemplary embodiment of a plasma generating device 130887.doc 21 200901833 Figure 14 is a plan view showing a portion of the head according to Figure 13 cut away [Major component symbol description] 10 Plasma generating unit 12 Upper plasma plate 14 Lower plasma plate 18 Plasma generating electrode 30 Supply unit 40 Raw gas supply unit 50 Head 60 Upper plate structure 62 Pipe 63 Active gas spray port 70 Lower plate structure 74 Raw gas spray port 100 Plasma generating device 110 Plasma generating unit 112 Power-on Pulp board 114 Lower plasma board 116 Space board 118 Plasma generating electrode 120 Support unit 130 Active gas supply unit 140 Raw gas supply unit 150 Nozzle 130887.doc -22· 200901833 160 Upper plate structure 162 Pipe 163 Active gas spray port 170 lower plate structure 172 lower plate through hole 174 original gas spray port 178 barrier wall 272 through hole 278 upper blocking ring 250 nozzle 350 Head 380 Barrier plate 370 Lower plate structure 372 Lower plate through hole 382 Intermediate through hole 386 Guide hole 374 Raw gas spray port 410 Plasma generating unit 450 Nozzle 470 Lower plate structure 474 Raw gas spray port 478 Lower plate blocking wall 480 Block Plate 482 intermediate through hole 130887.doc -23 - 200901833 486 conduit 488 intermediate barrier wall 550 nozzle 552 original gas moving space 574 raw gas spray port 650 nozzle 652 original gas moving space 670 lower plate structure 674 raw gas spray port 678 lower plate blocking wall 750 nozzle 752 original gas moving space 770 lower plate structure 774 raw gas spray port 778 lower plate blocking wall 780 blocking plate 786 pipe 788 intermediate blocking wall G micro-void 130887.doc -24-

Claims (1)

200901833 十、申請專利範圍: 1· 一種電漿產生裝置,其包括: 電裂產生單元; 噴頭與該電 合之上板結 上板結構及 活躍氣體喷 上板結構及 向電漿產生 内部之原氣200901833 X. Patent application scope: 1. A plasma generating device, comprising: an electric crack generating unit; a nozzle and the upper plate structure of the electric junction and an active gas spray plate structure and an original to the plasma gas =於該電聚產生單元之下部之喷頭,該 漿產生早兀—起提供電漿室,且包括上下結 構及包括多個原氣噴霧口之下板結構,由該 該下板結構提供原氣移動空間,i包括提供 霧之夕個導官,該等活躍氣體喷霧口由該 該下板結構中之—者上下貫穿而形成; :活躍氣體供應IA ’該活躍氣體供應單元 單元供應活躍氣體;及 原氣供應單元,該原氣供應單元向該噴頭 移動空間供應原氣; 該原氣及活躍氣體於計劃之位置上混合。 2.如請求項丨之„產生裝置,其進包括崎壁,該 ,播壁阻播該上板結構及該下板結構中之—者與該等導 嘗之間的空隙。 3.如睛求項2之電漿產生裝置’其中該上板結構及該下板 結構包括貫穿孔,該等貫穿孔露出該等導管,該阻擒壁 配置於該等導管周阻擔該#導管及該等貫穿孔之間 的空隙。 3 4.如請求項2之電漿產生裝置’其中該阻撞壁包括該阻播 壁上部所形成之中間阻擋壁’其中該中間阻擋壁在中間 貫穿孔相應之地方上形成,用於覆蓋該等導管之外部。 130887.doc 200901833 5.:請求項丄之電製產生裝置,其進一步包括阻擔板,其 =P且擋板夾在該上板結構及該下板結構之間,從而上 下刀割該原氣移動空間,並包括與預期之原氣分布相應 形成之導孔。 6·如請求項5之電漿產生裝置,其中該噴頭之下板結構包 括將4等導管向下露出之下板貫穿孔,該等下板貫穿孔 形成為具有與該等導管之外部接觸之大小。 7. 如:求項5之電聚產生裝置’其中該阻擋板包括與該等 應之中間貫穿孔’該等中間貫穿孔形成為具有與 5玄專導管之外部接觸之大小。 8. 如請求们之電|產生裝置,其中該等導管之下端安裝 於比原氣喷霧口略高之上部部位。 9. 如請求項8之電聚產生裝置,其進-步包括在導管下邻 氣體之噴嘴空間,其中該喷嘴空間形成於活躍 體贺霧口之下部。 10. 如請求们之電聚產生裝置,其中該電漿產生單元包括 下部安裝之電衆產生電極,其中該電漿產生電極包括多 :孔’該活躍氣體供應單元向該電襞產生電極 應活躍氣體。 丨併 u. 一種電漿產生裝置,其包括·· 電漿產生單元; 亥電衆產生單元之下部之噴頭’該噴頭 :產生早元一起提供電聚室,且包括向下形成之多個導 官之上板結構及包括形成於比該等導管略低之下端;: 130887.doc 200901833 σρ位的夕個原氣噴霧口之下板結構,由該上板結構及該 下板、σ構提供原氣移動空間,其中下板結構包括下板阻擋 J該阻擋壁除該等原氣喷霧口外部分地圍繞該等導管 之外。卩而阻擋該原氣移動空間; 活躍氣體供應單元,該活躍氣體供應單元向電衆產生 單元供應活性氣體;及 原氣供應單元,該原氣供應單元向該噴頭内之原氣移 動空間供應原氣。a nozzle on the lower portion of the electropolymerization unit, the slurry is provided to provide a plasma chamber, and includes a top and bottom structure and a lower plate structure including a plurality of raw gas spray ports, the original plate structure providing the original The air moving space, i includes a guide for providing a mist, which is formed by the upper and lower sides of the lower plate structure; the active gas supply IA 'the active gas supply unit unit is actively supplied And a raw gas supply unit that supplies the raw gas to the moving space of the nozzle; the raw gas and the active gas are mixed at a planned position. 2. The request device 产生 产生 产生 产生 产生 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括 包括The plasma generating device of claim 2, wherein the upper plate structure and the lower plate structure comprise through holes, the through holes exposing the conduits, the barrier walls being disposed on the conduits to block the #catheters and the like a gap between the through holes. 3 4. The plasma generating device of claim 2, wherein the blocking wall includes an intermediate blocking wall formed by an upper portion of the blocking wall, wherein the intermediate blocking wall has a corresponding portion in the middle through hole Formed on the outside for covering the outside of the conduits. 130887.doc 200901833 5. The electrical generation device of the request item, further comprising a resisting plate, wherein the plate is clamped to the upper plate structure and the lower plate structure Between the plate structures, thereby cutting the raw gas moving space up and down, and including a guide hole formed corresponding to the expected original gas distribution. 6. The plasma generating device of claim 5, wherein the lower plate structure of the nozzle comprises 4th pipe is exposed downward to the lower plate through hole, etc. The plate through hole is formed to have a size in contact with the outer portion of the pipes. 7. The electrocoagulation device of claim 5, wherein the block plate includes an intermediate through hole of the intermediate through hole It has the size of the external contact with the 5 Xuan special conduit. 8. As requested by the generators, the lower end of the conduits is mounted above the upper portion of the original gas spray port. 9. As requested in item 8 An electropolymerization device, the step further comprising a nozzle space adjacent to the gas under the conduit, wherein the nozzle space is formed below the active body haze. 10. The electromagnet generating device of the request, wherein the plasma generating unit The utility model comprises a lower-mounted electric generating electrode, wherein the plasma generating electrode comprises a plurality of holes: the active gas supply unit generates an electrode active gas to the electric enthalpy. 丨和 u. A plasma generating device, comprising: a slurry generating unit; a nozzle of the lower portion of the generating unit; the nozzle: generating an early element together to provide an electropolymer chamber, and including a plurality of guide upper plate structures formed downward and including forming The lower end of the conduit is slightly lower;: 130887.doc 200901833 The plate structure under the sigma gas spray port of the σρ position, the original gas moving space is provided by the upper plate structure and the lower plate and the σ structure, wherein the lower plate structure includes the lower The block barrier J partially surrounds the ducts except for the raw gas spray ports, and blocks the raw gas moving space; an active gas supply unit that supplies the active gas to the electricity generating unit And a raw gas supply unit that supplies the raw gas to the raw gas moving space in the nozzle. 12.如請求仙之電衆產生裝置,其進一步包括阻擋板,其 中該阻揚板夾在該上板結構與該下板結構之間,從而上 下分割該原氣移動空間’並包括與預期之原氣分布相應 形成之導孔。 13· —種電漿產生裝置,其包括: 電漿產生單元;12. The apparatus of claim 1, further comprising a blocking plate, wherein the damping plate is sandwiched between the upper plate structure and the lower plate structure, thereby dividing the original moving space 'up and down' and including and expected The original gas is distributed correspondingly to the guide holes. 13. A plasma generating apparatus, comprising: a plasma generating unit; 配置於該電襞產生單元之下部之噴頭,該噴頭與該電聚 產生單元-起提供電槳室,以括向下形成之多個導管 之上板結構及包括多個原氣噴霧口之下板結構,由該上 =吉構構提供原氣㈣空間,其巾下板結構 包括阻擋壁,該阻擋壁圍繞該等導管之外部· 夹在該上板結構與該下板 板上下分割該原氣移動空間 相應形成之導孔; 該阻擋 氣分布 結構之間的阻擋板, 並包括與預期之原 活躍氣體供應單元, 單元供應活性氣體;及 该活躍氣體供應 單元向電漿產生 I30887.doc 200901833 原氣供應單元,該原氣供應單元向位於該喷頭内之原 氣移動空間供應原氣。 14.如請求項13之電漿產生裝置,其 τ忒寺導官之 於比該等原氣喷霧口略高之上部部位。 知文裝 ί 130887.doca showerhead disposed at a lower portion of the power generating unit, the showerhead and the electro-convergence generating unit providing an electric paddle chamber to include a plurality of conduit upper plate structures formed downward and including a plurality of raw gas spray ports a plate structure, the raw gas (four) space is provided by the upper=ji configuration, and the under-plate structure comprises a barrier wall surrounding the outer portion of the pipes, sandwiching the upper plate structure and the lower plate to divide the original gas a guide hole formed correspondingly in the moving space; a blocking plate between the barrier gas distribution structure, and including an expected active gas supply unit, the unit supplies the active gas; and the active gas supply unit generates the plasma to the plasma I30887.doc 200901833 a gas supply unit that supplies the raw gas to the raw gas moving space located in the shower head. 14. The plasma generating apparatus of claim 13, wherein the τ忒寺 guide is slightly above the upper portion of the raw gas spray port. Zhiwen installed ί 130887.doc
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KR1020070043011A KR100874340B1 (en) 2007-05-03 2007-05-03 Plasma Generator Using Blocking Plate
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TWI609442B (en) * 2012-08-31 2017-12-21 諾發系統有限公司 Variable showerhead flow by varying internal baffle conductance
TWI803076B (en) * 2020-12-07 2023-05-21 日商東芝三菱電機產業系統股份有限公司 Active gas generation apparatus

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TWI242397B (en) * 2004-05-25 2005-10-21 Nano Electronics And Micro Sys Plasma sprinkle-nozzle

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI609442B (en) * 2012-08-31 2017-12-21 諾發系統有限公司 Variable showerhead flow by varying internal baffle conductance
TWI803076B (en) * 2020-12-07 2023-05-21 日商東芝三菱電機產業系統股份有限公司 Active gas generation apparatus

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