200901406 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種封裝基板之電性連接元件結構，尤 指一種適用於使封裝基板更為輕薄短小之電性連接元件結 5 構。 【先前技術】 隨著電子產業相關技術的發展，各種輕薄短小的封裝 體不斷的被開發出來，覆晶（Flip-Chip)球閘陣列（Ball Grid 10 Array ’ BGA)封裝就是其中一例，在覆晶球閘陣列封裝體 中’晶片不再是將主動面之電極墊（electr〇de pad)經由打線 (wire bonding)來連接到封裝基板上，而是電極墊（electr〇de pad)透過烊料凸塊（s〇ider bump)直接連接到封裝基板上，因 此’覆晶球閘陣列封裝體可提升電路密度以及提升電氣特 15 性。 覆日日接合屬於面接型陣列式（area aiTay)的接合，因此 旎應用於極高密度的構裝。簡單來說，覆晶接合的觀念係 先在晶片主動面的電極墊上形成焊料凸塊，然後再將晶片 主動面與封裝基板進行對位接合，再以迴焊（[WOW)熱處 20理，配合焊料熔融時之表面張力效應使焊料成球，進而完 成晶片與覆晶基板之電性連接。這種方式不僅可突破傳統 打線技術的數目限制，適合多腳數元件封裝，而且電性效 能也因具有較短的内連線（C〇nnecti〇n 而大幅提升。 Μ參考圖1係為習知覆晶球閘陣列封裝體的剖面示意 200901406 圖，其主要包含有一封裝基板Η)以及一晶片15。此封裝基 板10的上表面10a形成有複數凸塊焊墊丨丨i，下表面i⑽形成 有複數個焊球墊112，並此封裝基板1〇的上表面1〇a及下表 面i〇b分別覆蓋有一防焊層12a，12b，此防焊層12a,12b形成 有複數開孔121a，121b以分別顯露出覆蓋其下之凸塊焊墊 111以及:fcp球塾Π 2。此晶片15的表面具有複數個電極塾 〇 10 15 151，而此電極墊151經由一電性連接元件結構13(例如焊料 凸塊）而電性導接至封裝基板丨〇的上表面丨〇a之凸塊焊墊1丄丄 上。此外，封裝基板1 〇與晶片丨5之間的空隙係可注入一底 膠層（under fill)16，並予以填滿，用以保護覆晶球閘陣列封 裝體免受外界環境景> 響。完成前述組裝之後，係可利用此 封裝基板10下表面10b的焊球墊112經由複數個電性連接元 件結構14 (例如焊料球）而與一印刷電路板電性連接。 在此，％知封裝基板與晶片電性導接之電性連接元辦 結構係可使用焊錫材料、金或銅凸塊，甚者或可使用金对 或銅球。然而，當電性連接元件結構使用焊錫材料以形居 球狀時’係需要足夠的高度以填入底膠層降低應力，但淳 度越高，㈣亦變大，如此，使得其配置間距亦變大 不利於輕薄短小之應用。若钱其變成細間距（.冲啪， 必須縮小球徑，但其電性連接元件結構接合界面無法維持 適當的高度，且不利於填人底膠層，而無法有效消除電性 連接元件結構間的應力。當電性連接元件結構使用金或 的材料時’則會有成本效益的問題產生。 — 習知的電性連接元件結構除了前述的結構以外，更有 20 200901406 材料曰缺使用圓柱狀的結構，其材料係為金、銅或銅合金 '。,,，、、而’此等方式係會將成本提高（因使用材料的成本 三放署且通常以植針方式佈設18柱狀連接元件，係、不易穩 疋放置，而不利於製程之進行。 【發明内容】 之雪Μ、*於：述翫知之缺點，本發明係提供-種封裝基板 接塾Μ接Γ件結構’該封裝基板表面形成有複數電性連 10 15 好::二—防焊層，該防焊層形成有複數開孔以顯露 兮H’、下之電性連接墊，該電性連接元件結構係、形成於 連接塾上’該電性連接元件結構包括：-核心層、 :-，覆層以及一第二包覆層。第一包覆層係包覆核心 曰且°亥第&覆層材質之密度高於該核心層。第-包覆 層係包覆該第—包覆層。 弟一匕覆 月^本發明之電性連接元件結構令，電性連接元件結 冓不限$為任何形狀，較佳係為圓柱狀或球狀。 在前述本發明之電性連接元件結構中，核心層的 =;低密度之金屬。較佳地’該樹脂可為有機樹脂 \ 。又，有機樹脂例如可為具有導電性之有機谢 月旨、或含纪、銅、銀、金、欽或其組合之有機樹脂等。而 膠樹脂例如可為含氣橡膠5切橡膠等。再者，當核心層 #材料為低密度之金屬時’係例如可為銘金屬。 此外，前述本發明之電性連接元件結構中，包覆於核 心層外部之第一包覆層的材料係可為選自陶瓷、銅、鎳/金 20 200901406 (先形成錦再形成金)及鋅所 -包覆層外部之第二包 砰广、中者。而包覆於第 金及鎳/金所組之輕其中 ，.、，選自焊錫材料、鋅/鎳/ w..且丹〒—者。 二包覆層使用的材料係可"覆層以及第 用。 」野應於核心層所使用的材料而使 别述本發明之電性連接元件社 包覆層，其係包覆該第二包 设可匕括一第三 料係可為焊錫材料。並且 第-匕覆層的材 包覆戶所# M m 此第二包覆層係可對應於第二 層所ί用的材料而可選擇性地包覆至第二包覆居上。 除了别述封裝基板之電性連 1 有複數電性連接墊並覆該封裝基板表面形成 逆任蛩龙覆盍有—防焊層，該防焊 15 :::以顯露出覆蓋其下之電性連接塾，該電性連接元: :構係：成：該些電性連接塾上，該電性連接元件結構包 心層mr第一包覆層。第一包覆層係包覆該核 層、、中，该電性連接元件結構的重心係位 接元件結構内之下方。 电注運 在此，前述之電性連接元件結構中，電性連接元件梦 構不限定為任何形狀’較佳係可為不倒翁形錄結構。。 在前述本發明之電性連接元件結構巾，核心層的 可為輕質的材料。當核心層的材料為輕質的材料時，則第 -包覆層的材料為重質的材料。在此，輕f的材料係可使 用樹脂或低密度之金屬。較佳地，該樹脂可為有機樹脂或 橡膠樹脂。又’有機樹脂例如可為具有導電性之有機樹脂、 200901406 或含把、銅、銀、金、鈦或其組合之有機樹脂等。而橡膠 樹脂例如可為含氟橡膠或石夕橡膠等。第一包覆層的材料係 可使用選自陶竟、銅、錄/金及鋅所組之群組其十一者。 此外，本發明第-包覆層的底部的厚度係大於頂 5 厚度。 因此，本發明的封裝基板之電性連接元件結構係解決 習知電性連接元件結構中因需要足夠高度而無法使其間距 W、’亦不利於填人底膠層崎低應力的問題，本發明係 'T提供細間距之電性連接元件結構，而可使得封裝基板更 Η)為輕薄則、。同時，本發明之電性連接元件結構更解決了 使用材料上之成本問題，以及可有利於電性連接元件結構 穩疋放置於封裝基板上，而有助於製程之進行。 【實施方式】 15 以下係藉由特定的具體實施例說明本發明之實施方 f 熟習此技藝之人士可由本說明書所揭示之内容輕易地 I 了解本發明之其他優點與功效。本發明亦可藉由其他不同 的具體實施例加以施行或應用，本說明書中的各項細節亦 可基於不同觀點與應，在不恃離本發明之精神下進 20 種修飾與變更。 〃本發明之實施例中該等圖式均為簡化之示意圓。惟該 等圖式僅顯示與本發明有關之元件，其所顯示之元件非 實際實施時之態樣，其實際實施時之元件數目、形狀等: 例為-選擇性之設計，且其元件佈局型態可能更複雜。 9 200901406 實施例1 請同時參考圖2以及圖3，圖2係為本發明之封裝基板剖 視圖’圖3係為本發明形成於封裝基板表面之電性連接元件 結構示意圖。 5 首先’如圖2所示，提供一封裝基板20，而此封裝基板 20例如可為電路板。此封裝基板2〇的上表面2〇a形成有複數 電性連接墊21，且亦於下表面2〇b形成複數電性連接墊22。 並且’此封裝基板20的上表面20a及下表面20b分別覆蓋有 一防焊層23a，23b，此防焊層23a，23b形成有複數開孔 10 231a，231b以分別顯露出覆蓋其下之電性連接墊21，22。 接著，係可在此封裝基板2〇上表面2〇a的電性連接墊21 开’成一電性連接元件結構30a(如圖3所示）。在此，電性連接 元件結構30a包括有一核心層31、一第一包覆層32以及一第 二包覆層33。此第一包覆層32係包覆核心層31，且第一包 15覆層32材質之密度高於該核心層31。第二包覆層33係包覆 該第一包覆層32。 在本實施例中的電性連接元件結構3〇a係可為圓柱狀 之結構。此外，核心層31可使用的材料為樹脂或低密度之 金屬。較佳地，樹脂可為有機樹脂或橡膠樹脂。又，有機 20樹脂例如可為具有導電性之有機樹脂、或含鈀、銅、銀、 金、鈦或其組合之有機樹脂等。而橡膠樹脂例如可為含氟 橡膠或石夕橡膠等。再者，當核心層31的材料為低密度之金 屬時’係例如本實施例可使用銘金屬。第—包覆層二材 4可為選自陶瓷、銅、鎳/金(先形成鎳再形成金)及鋅所組 200901406 ’其中者。而包覆於第一包覆層32外部之第二包覆 層33係可為選自焊錫材料、鋅/鎳/金及鎳/金所組之群組其 中一者。其中，第二包覆層33的焊錫材料可為Sn、％扑或 無在口之焊錫等。在此，第-包覆層32以及第二包覆層33使 5 2的材料係對應於核心層”所使用的材料而使用。例如， 曰核心層31使用的材料為樹脂時，第-包覆層32的材料係 可為銅或鎳/金，此時，第二包覆層33使用的材料係可為 n &、SnPb或無鉛之焊錫等。當核心層31使用的材料為低密 度之金屬，例如為紹金屬時，第一包覆層32使用的材料可 H)為陶I或鋅’此時’第二包覆層33使㈣材料係可為辞/錄 /金（係先形成辞，再形成錄，最後形成金）或錄/金（係先形成 鎳’再形成金）。 因此，封裝基板2〇上表面2〇a的電性連接墊2丨可 發明的電性連接元件結構3〇a而可與一晶片（圖中未示）電性 15導接。此外’此封裝基板2〇與晶片之間的空隙係可注入一 ^膠層(圖令未示)’並予以填滿，用以保護封裝基板20以及 ( ^之間的電氣性f免受外界環境影響，同時可緩和連接 處的應力。 ^ 除了前述可利用前述之電性連接元件結構地使封 20基板20與晶片電性連接，亦可將此種電性連接元件結構他 形成於封裝基板20下表面鳥的電性連接墊以，而可 裝基板20與一印刷電路板電性連接。 實施例2 請參考圖4,本實施例係與實施例1大致相同，但不同的 11 200901406 是，本實施例的電性連接元件結構30b在第二包覆層33表面 復包括形成一第二包覆層34。此時，核心層3丨的材料係為 鋁金屬、第一包覆層32的材料係為鋅、第二包覆層Μ的材 料係為鎳/金以及第三包覆層34的材料係為焊錫材料。而第 5 一包覆層34所使用的焊錫材料例如可為Sn、SnPb或無金l之 焊錫等。 ° 實施例3 請參考圖5’本實施例係與實施例丨大致相同，但不同的 是本實施例電性連接元件結構4〇a的形狀係為球狀結構，以 10取代實施例1之圓柱狀之結構。其餘本實施例電性連接元件 結構4〇a之核心層41、第一包覆層42以及第二包覆層们的材 質係與實施例1相同。 實施例4 請參考圖6，本實施例係與實施例2大致相同，但不同 15的是本實施例電性連接元件結構40b的形狀係為球狀結 構，以取代實施例1之圓柱狀之結構。其餘本實施例電性連 接疋件結構40b之核心層41、第一包覆層42、第二包覆層43 及第三包覆層44的材質係與實施例1相同。 實施例5 20 請參考圖7,本實施例係與實施例1相同，但本實施例之 電丨生連接元件結構5〇係包括一核心層5丨以及一第一包覆層 52。第一包覆層52係包覆該核心層51。其中，該電性連接 凡件結構50的重心係位於該電性連接元件結構5〇内之下 方0 12 200901406 j此，本實施例之電性連接元件結構50之形狀係可為 不倒翁形柱狀結構。並且，第一 包覆層52底部的厚磨（gjj#BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrical connection element structure of a package substrate, and more particularly to an electrical connection element structure suitable for making a package substrate lighter, thinner and shorter. [Prior Art] With the development of related technologies in the electronics industry, various thin and short packages have been continuously developed. The Flip-Chip Ball Array 'BGA package is one example. In the crystal ball gate array package, the wafer is no longer connected to the package substrate by wire bonding of the active surface, but the electrode pad (electr〇de pad) is passed through the material. The bumper bumps are directly connected to the package substrate, so the flip-chip ballast array package can increase circuit density and improve electrical characteristics. The day-to-day joint is an area-type array (area aiTay) joint, so it is applied to a very high-density package. In simple terms, the concept of flip chip bonding is to form solder bumps on the electrode pads of the active surface of the wafer, and then the wafer active surface is aligned with the package substrate, and then reflowed ([WOW) heat, In combination with the surface tension effect of the solder melting, the solder is balled, thereby completing the electrical connection between the wafer and the flip chip substrate. This method not only breaks through the limitation of the number of traditional wire-bonding technologies, but also is suitable for multi-pin component packaging, and the electrical performance is also greatly improved by having a short interconnect (C〇nnecti〇n). A cross-sectional view of the flip-chip ball grid array package is shown in FIG. 200901406, which mainly includes a package substrate and a wafer 15. The upper surface 10a of the package substrate 10 is formed with a plurality of bump pads 丨丨i, and the lower surface i(10) is formed with a plurality of solder ball pads 112, and the upper surface 1〇a and the lower surface i〇b of the package substrate 1〇 are respectively Covered with a solder resist layer 12a, 12b, the solder resist layers 12a, 12b are formed with a plurality of openings 121a, 121b to respectively expose the bump pads 111 and the fcp ball 2 overlying them. The surface of the wafer 15 has a plurality of electrodes 10 15 151. The electrode pads 151 are electrically connected to the upper surface of the package substrate 丨〇 via an electrical connection element structure 13 (eg, solder bumps). The bump pads are on the top. In addition, the gap between the package substrate 1 and the wafer cassette 5 can be injected into an under fill 16 and filled to protect the flip chip array package from the external environment. . After the foregoing assembly is completed, the solder ball pads 112 of the lower surface 10b of the package substrate 10 can be electrically connected to a printed circuit board via a plurality of electrical connection element structures 14 (e.g., solder balls). Here, the electrical connection structure of the package substrate and the wafer may be soldered, gold or copper bumps, or gold or copper balls may be used. However, when the electrical connection element structure uses a solder material to form a spherical shape, the system needs a sufficient height to fill the primer layer to reduce the stress, but the higher the twist, the (4) also becomes larger, so that the arrangement pitch is also Bigger is not conducive to thin, short applications. If the money becomes fine pitch (., the ball diameter must be reduced, but the interface of the electrical connection component structure cannot maintain an appropriate height, and it is not conducive to filling the primer layer, and cannot effectively eliminate the structure of the electrical connection component. Stress. When the structure of the electrical connection element uses gold or the material, 'there will be a cost-effective problem. — The conventional electrical connection element structure is in addition to the above structure, and there are 20 200901406 materials lacking the use of cylindrical The structure of the material is gold, copper or copper alloy '.,,,, and 'these methods will increase the cost (due to the cost of using the material, and usually 18 needles are connected by needle) The components are not easy to be placed in a stable manner, and are not conducive to the process. [Invention] The present invention provides a package substrate connection structure, which is a shortcoming of the present invention. A plurality of electrical connections are formed on the surface of the substrate: a solder mask, the solder resist layer is formed with a plurality of openings to expose the electrical connection pads, and the electrical connection elements are formed. Yulian The electrical connection element structure comprises: - a core layer, a -, a cladding layer and a second cladding layer. The first cladding layer covers the core layer and the density of the coating material The core layer is coated with the first cladding layer. The first cladding layer covers the first cladding layer. The electrical connection component structure of the invention is such that the electrical connection component is not limited to any shape. Preferably, it is cylindrical or spherical. In the foregoing electrical connection element structure of the present invention, the core layer is a low density metal. Preferably, the resin may be an organic resin. Further, the organic resin may be, for example. It is an organic organic resin having electrical conductivity, or an organic resin containing hexagram, copper, silver, gold, chin or a combination thereof, and the rubber resin may be, for example, a gas-containing rubber, a cut rubber, etc. Further, when the core layer is # When the material is a low-density metal, it may be, for example, a metal. In addition, in the foregoing electrical connection element structure of the present invention, the material of the first cladding layer coated on the outside of the core layer may be selected from ceramics and copper. , nickel/gold 20 200901406 (formed first to form gold and then gold) and zinc - the outer layer of the cladding The second package is wide and medium. It is coated with the light of the gold and nickel/gold group, and is selected from solder materials, zinc/nickel/w.. and tantalum. The material can be used in both the cladding and the first layer. The material used in the core layer is to cover the electrical connection component of the present invention, which is covered by the second package. A third material system may be a solder material, and the material of the first-clad coating layer may be optionally coated with a material corresponding to the material used for the second layer. Up to the second cladding. Except for the electrical connection of the package substrate, there are a plurality of electrical connection pads and the surface of the package substrate is formed to form a reverse soldering layer-proof layer, the solder resist 15 ::: to reveal The electrical connection element is covered by the electrical connection element: the structure: into: the electrical connection, the electrical connection element structure comprises a first cladding layer of the cladding layer mr. The first cladding layer covers the core layer, and the center of gravity of the electrical connection element structure is located below the structure of the component. Electric Injection Here, in the foregoing electrical connection element structure, the electrical connection element is not limited to any shape, and it is preferable to be a tumbler structure. . In the foregoing electrical connecting member structural napkin of the present invention, the core layer may be a lightweight material. When the material of the core layer is a lightweight material, the material of the first cladding layer is a heavy material. Here, the material of the light f is a resin or a low density metal. Preferably, the resin may be an organic resin or a rubber resin. Further, the organic resin may be, for example, an organic resin having conductivity, 200901406 or an organic resin containing copper, silver, gold, titanium or a combination thereof. The rubber resin may be, for example, a fluorine-containing rubber or a stone rubber. The material of the first cladding layer may be selected from the group consisting of ceramics, copper, gold, gold, and zinc. Further, the thickness of the bottom portion of the first cladding layer of the present invention is greater than the thickness of the top 5 layer. Therefore, the electrical connection element structure of the package substrate of the present invention solves the problem that the structure of the conventional electrical connection element cannot be made to have a sufficient height, and the pitch W, 'is also unfavorable for filling the underlying layer. The invention 'T provides a fine pitch electrical connection element structure, which can make the package substrate more sturdy). At the same time, the structure of the electrical connecting component of the present invention further solves the cost problem of using materials, and can facilitate the stable placement of the electrical connecting component structure on the package substrate, thereby facilitating the process. [Embodiment] The following describes the embodiments of the present invention by way of specific embodiments. Those skilled in the art can readily understand the other advantages and effects of the present invention from the disclosure herein. The present invention may be embodied or applied in various other specific embodiments, and various modifications and changes may be made without departing from the spirit and scope of the invention. In the embodiments of the present invention, the drawings are simplified schematic circles. However, the drawings only show the components related to the present invention, and the components shown therein are not actual implementation, the number of components, the shape, etc. in actual implementation: an example - selective design, and component layout The pattern may be more complicated. 9 200901406 Embodiment 1 Please refer to FIG. 2 and FIG. 3 simultaneously. FIG. 2 is a cross-sectional view of the package substrate of the present invention. FIG. 3 is a schematic structural view of an electrical connection element formed on the surface of the package substrate of the present invention. 5 First, as shown in Fig. 2, a package substrate 20 is provided, and the package substrate 20 can be, for example, a circuit board. The upper surface 2〇a of the package substrate 2 is formed with a plurality of electrical connection pads 21, and a plurality of electrical connection pads 22 are also formed on the lower surface 2〇b. And the upper surface 20a and the lower surface 20b of the package substrate 20 are respectively covered with a solder resist layer 23a, 23b. The solder resist layers 23a, 23b are formed with a plurality of openings 10 231a, 231b to respectively expose the electrical properties covering the underside Connect the pads 21, 22. Then, the electrical connection pads 21 of the upper surface 2〇a of the package substrate 2 are opened to form an electrical connection element structure 30a (as shown in FIG. 3). Here, the electrical connection element structure 30a includes a core layer 31, a first cladding layer 32, and a second cladding layer 33. The first cladding layer 32 covers the core layer 31, and the first cladding 15 cladding layer 32 has a higher density than the core layer 31. The second cladding layer 33 coats the first cladding layer 32. The electrical connection element structure 3a in the present embodiment may have a cylindrical structure. Further, the material which can be used for the core layer 31 is a resin or a low density metal. Preferably, the resin may be an organic resin or a rubber resin. Further, the organic 20 resin may be, for example, an organic resin having conductivity or an organic resin containing palladium, copper, silver, gold, titanium or a combination thereof. The rubber resin may be, for example, a fluorine rubber or a stone rubber. Further, when the material of the core layer 31 is a low-density metal, for example, the metal can be used in the present embodiment. The first cladding layer 2 may be selected from the group consisting of ceramics, copper, nickel/gold (formed nickel to form gold) and zinc group 200901406'. The second cladding layer 33 coated on the outside of the first cladding layer 32 may be one selected from the group consisting of solder materials, zinc/nickel/gold, and nickel/gold. The solder material of the second cladding layer 33 may be Sn, %, or solderless. Here, the first cladding layer 32 and the second cladding layer 33 use a material of 52 for the material used for the core layer. For example, when the material used for the core layer 31 is a resin, the first package The material of the cladding layer 32 may be copper or nickel/gold. In this case, the material used for the second cladding layer 33 may be n &, SnPb or lead-free solder, etc. When the core layer 31 is made of a low density material When the metal is, for example, a metal, the material used for the first cladding layer 32 can be H) is ceramic I or zinc. At this time, the second cladding layer 33 enables the (4) material system to be a word/record/gold. Forming a word, then forming a record, and finally forming gold) or recording/gold (which is formed by first forming nickel' and then forming gold). Therefore, the electrical connection pad 2 of the upper surface 2〇a of the package substrate 2 can be electrically connected. The device structure 3〇a can be electrically connected to a wafer (not shown). In addition, the gap between the package substrate 2 and the wafer can be injected into a layer (not shown). It is filled to protect the package substrate 20 and the electrical f between (^) from the external environment, and at the same time ease the stress at the joint. ^ The foregoing substrate 20 can be electrically connected to the wafer by using the above-mentioned electrical connection element structure, or the electrical connection element structure can be formed on the electrical connection pad of the bird on the lower surface of the package substrate 20. The mounting substrate 20 is electrically connected to a printed circuit board. Embodiment 2 Referring to FIG. 4, the present embodiment is substantially the same as Embodiment 1, but the different 11 200901406 is that the electrical connecting component structure 30b of the present embodiment is The surface of the second cladding layer 33 includes a second cladding layer 34. At this time, the material of the core layer 3 is aluminum metal, and the material of the first cladding layer 32 is zinc, and the second cladding layer is The material of the material of nickel/gold and the third cladding layer 34 is a solder material, and the solder material used for the fifth cladding layer 34 may be, for example, Sn, SnPb or solder without gold, etc. 3, this embodiment is substantially the same as the embodiment ,, but the difference is that the shape of the electrical connection element structure 4〇a of the present embodiment is a spherical structure, and the cylindrical shape of the embodiment 1 is replaced by 10. Structure. The rest of the embodiment is electrically connected to the core of the component structure 4〇a 41. The materials of the first cladding layer 42 and the second cladding layer are the same as those of the first embodiment. Embodiment 4 Referring to FIG. 6, this embodiment is substantially the same as Embodiment 2, but the difference is 15 in this embodiment. The shape of the electrical connection element structure 40b is a spherical structure instead of the columnar structure of Embodiment 1. The remaining embodiment is electrically connected to the core layer 41 of the element structure 40b, the first cladding layer 42, and the first embodiment. The materials of the second cladding layer 43 and the third cladding layer 44 are the same as those of the first embodiment. Embodiment 5 20 Referring to FIG. 7, the embodiment is the same as that of the embodiment 1, but the electric twin connection component of the embodiment The structure 5 includes a core layer 5丨 and a first cladding layer 52. The first cladding layer 52 covers the core layer 51. The center of gravity of the electrically connected component structure 50 is located below the electrically connected component structure 5 0 0 12 200901406. Thus, the shape of the electrical connection component structure 50 of the present embodiment may be a tumbler shaped column. structure. And, the thick coating at the bottom of the first cladding layer 52 (gjj#
〇 . .训训叫件吵;f町脂。又，有機樹脂例如 〇 $為具有導電性之有機樹脂、或含纪、銅、銀、金、鈦或 1〇其=之有機樹脂等。而橡膠樹脂例如可為含氣橡膠或石夕 〇橡膠等。而此核心層51係位於電性連接元件結構5〇内之上 半部。此電性連接元件結構50中之第一包覆層52係可為重 例如可為選自陶瓷、銅、鎳/金及鋅所組之群組其 然而，當核心層5 1使用的材料為樹脂時，第—包 質材料，例如 中一者。然而 15覆=52的材料係可為銅或鏢/金。當核心、層51使用的材料為 15低密度之金屬，例如為紹金屬時，第一包覆層⑵吏用的材 料可為陶變*或辞等。 士綜上所述，本發明形成在封裝基板上的電性連接元件 結=係為-多層材料，並且其形狀可為圓柱狀、球狀或不 2倒羽形柱狀結構。此外，此多層材料係可使用樹脂或低密 20度之金屬為核心材料。當使用樹脂為核心材料時，係可緩. 和電性連接疋件結構連接的應力，不會因連接而產生結構 =變形，並且可降低材料的成本。當使用低密度的金屬（尤 才曰鋁金屬）為核心材料時，其質輕、材質軟，同樣亦可緩和 電性連接元件結構連接的應力，不會因連接而產生結構的 13 200901406 變形，並且可降低材料的成本。再者， Ϊ:接:件結構的重心為位於此電性連接 ===使此電性連接元件結構易於站立，有利於電 5 而舉例而已，本發明所 圍所述為準，而非僅限 上述實施例僅係為了方便說明 主張之權利範圍自應以申請專利範 於上述實施例。 【圖式簡單說明】 圖1係習知之覆晶球閘陣列封裝體的剖面示音圖。 圖2係本發明—較佳實施例之封裝基板剖面：意圓。 '圖3至圖7係本發明—較佳實施例之形成於封裝基板之 電性連接元件結構示意圖。 15〇 . . Training is a noisy; f-fat. Further, the organic resin such as 〇 $ is an organic resin having conductivity, or an organic resin containing hexagram, copper, silver, gold, titanium or yttrium. The rubber resin may be, for example, a gas-containing rubber or a stone rubber. The core layer 51 is located in the upper half of the electrical connection element structure 5A. The first cladding layer 52 in the electrical connection element structure 50 may be, for example, a group selected from the group consisting of ceramic, copper, nickel/gold, and zinc. However, when the core layer 51 is made of a resin When the first - encapsulation material, such as the middle one. However, the material of 15 overlay = 52 can be copper or dart/gold. When the core and layer 51 are made of a material having a low density of 15, for example, a metal, the material of the first cladding layer (2) may be a ceramic or a metal. As described above, the electrical connecting element formed on the package substrate of the present invention is a multi-layer material, and its shape may be a cylindrical shape, a spherical shape or a non-inverted columnar structure. Further, the multilayer material may be a resin or a low-density 20-degree metal as a core material. When the resin is used as the core material, the stress which is connected to the electrical connection of the element structure can be relieved, structure/deformation is not caused by the connection, and the cost of the material can be reduced. When a low-density metal (a special aluminum alloy) is used as the core material, it is light in weight and soft in material, and can also alleviate the stress of the structural connection of the electrical connecting element, and does not cause deformation of the structure due to the connection. And can reduce the cost of materials. Furthermore, the center of gravity of the connection structure is such that the electrical connection === makes the structure of the electrical connection element easy to stand, which is advantageous for the electric 5, and the present invention is based on the description, not just The above-mentioned embodiments are only intended to facilitate the description of the scope of the claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view of a conventional flip chip ballast array package. 2 is a cross section of a package substrate of the present invention - a preferred embodiment: an intention circle. 3 to 7 are schematic views showing the structure of an electrical connecting member formed on a package substrate in the preferred embodiment of the present invention. 15
【主要元件符號說明】 1G，2〇 封裝基板 I〇b，20b下表面 H2 焊球墊 121a,121b,23 la,23 lb 開孔 13,14,30a, 3 Ob,40a,40b,50 15 晶片 16 底膠層 31,41,51 核心層 33,43 第二包覆層 10a，20a上表面 111 凸塊焊墊 12a’12b’23a，23b 防焊層 電性連接元件結構 151 電極墊 21，22 電性連接墊 32’42,52第一包覆層 34,44 第三包覆層[Main component symbol description] 1G, 2〇 package substrate I〇b, 20b lower surface H2 solder ball pad 121a, 121b, 23 la, 23 lb opening 13, 14, 30a, 3 Ob, 40a, 40b, 50 15 wafer 16 Primer layer 31, 41, 51 Core layer 33, 43 Second cladding layer 10a, 20a Upper surface 111 Bump pads 12a'12b'23a, 23b Solder mask Electrical connection element structure 151 Electrode pads 21, 22 Electrical connection pad 32'42, 52 first cladding layer 34, 44 third cladding layer