TW200850054A - Light emitting element - Google Patents

Abstract

Provided is a light emitting element which includes an anode, a light emitting layer and a cathode by stacking them in this order. The light emitting layer includes nano crystal light emitting fine particles, and the light emitting element is driven by pulse width gradation.

Description

200850054 IX. INSTRUCTION DESCRIPTION: TECHNICAL FIELD The present invention relates to a light-emitting element. More specifically, it relates to a light-emitting element in which an organic electroluminescence layer is combined with a nanocrystal light-emitting particle. [Prior Art] 3 BACKGROUND OF THE INVENTION An organic electroluminescent (EL) element is a self-luminous element that utilizes an electric field applied to an organic thin film by an electric field applied thereto, and a hole injected from the anode and an electron injected from the cathode. The organic film combines to produce the principle of luminescence. A report on a low-voltage-driven organic EL element formed by a laminated element is produced by Cw. Tang et al. of Eastman Kodak Co., Ltd. (Non-Patent Document 1), and an organic EL element using an organic material as a constituent material is actively carried out. However, the organic EL element has to design the new luminescent material molecule every time the luminescent color is changed, and the width of the luminescence spectrum is wide and it is not easy to improve the color purity. 2〇"Resolving the above problems, some people have reviewed An organic-inorganic hybrid-molding electric field light-emitting element using nanocrystalline crystal light-emitting particles. The nanocrystal light-emitting fine particles can control the light-emitting color by changing the particle diameter thereof, and the half-width of the light-emitting spectrum of the monodisperse nanocrystal light-emitting fine particles is small and has light emission. Effect of good color purity 0 200850054 For example, Patent Document 1 discloses a light-emitting element in which a matrix layer is held between opposing electrodes and the matrix layer contains semiconductor nanocrystals. In addition to the transport layer, the electron transport layer, and the semiconductor nanocrystal, it may also have a hole barrier layer or electricity 5. In Patent Document 2, a current injection type light-emitting element in which a light-emitting layer contains a medium in which inorganic fluorescent mother nanoparticles are dispersed is disclosed, and inorganic fluorescent mother nanoparticles are doped with one or more kinds of elements. As the illuminating center, the current ✓ the main-in type illuminating element emits light at multiple wavelengths according to the plurality of dopants, and the absolute value of the free potential of the hole transporting layer is greater than the absolute value of the potential of the inorganic fluorescent matrix nanoparticle. And the absolute value of the LUMO energy level of the electron transport layer is greater than the absolute value of the inorganic fluorescent matrix nanoparticle iLU]V1〇 energy level. In Patent Document 3, it is disclosed that the light-emitting layer is held between the opposing electrodes, and The light-emitting layer is an electric field light-emitting element comprising a polymer compound in which semiconductor ultrafine particles are dispersed. The electric field light-emitting element has an electron transport layer between the cathode and the light-emitting layer 15, and has a hole blocking layer between the light-emitting layer and the electron transport layer. There is an electron blocking layer between the light-emitting layer and the hole transport layer. In Patent Document 4, it is disclosed that the use of a semiconductor crystal and a ligand coordinated to the surface thereof The electric field light-emitting element of the semiconductor ultrafine particles. Further, in Patent Document 5, it is disclosed that the inorganic nanoporous carrier layer and the 20-electron electron transport layer include independent nanoparticles contacting the polymer hole transport layer. EL element of the crystal light-emitting layer. In addition to the foregoing, a quantum dot light-emitting element (qD-LED) using various nanocrystal light-emitting fine particles has been proposed. For example, non-patent document 2 discloses triphenylenediamine. (TPD), quantum dot (qD) and chloroform 6 200850054 The mixed solution is spin-coated under a nitrogen atmosphere, and after drying the solvent, the organic matter is separated from the quantum dots, and a single layer of nanocrystalline luminescent particles is formed on the surface of the kTPD. QD-LED. In Non-Patent Document 3, qd_led using chemical synthesis of colloid qd and 5 QD thin film fabrication technology is disclosed. In Non-Patent Document 4, it is disclosed that in order to separate the luminescence process from charge conduction, a single single layer QD is held between two organic layers, and the organic layer transports the charge carriers to a vicinity of a single single layer QD to generate luminescence qd- LED. Non-Patent Document 5 discloses a qD_led having a film of a heterostructure composed of polyphenylethylene (PPV) and 10 CdSe nanocrystals. Non-Patent Document 6 discloses cdSe nanocrystals which are monodispersed in a polyvinylcarbazole (PVK) film (1000 Å) and an oxadiazole derivative, and are held by an indium tin oxide alloy (ITO) and an A1 electrode. QD-LED. Non-Patent Document 7 discloses that a mixed solution of qd and TPD is spin-coated, and the solvent is evaporated, and QD and TPD are separated and formed, and a large-area single layer in which QD is ordered is formed (&gt ;cm2) qd_leD. However, in the light-emitting element disclosed in the above-mentioned documents, for example, in the light-emitting element disclosed in Non-Patent Document 2, when the applied voltage is increased in order to increase the luminance, in addition to the nanocrystal, the electron transport layer is irradiated. (Alq3) 20 will also emit light, but there is a problem that the desired illuminating color cannot be obtained. When the gray scale display is performed when the voltage is changed, the color changes in the low-luminance low-voltage field and the high-luminance field of the south voltage. In order to utilize the excellent monochromaticity of the quantum dots, it is necessary to drive the light-emitting elements with a voltage in a range in which only the nanocrystalline crystal light-emitting particles emit light, but the brightness of the 200850054 obtained in the voltage of the range is still limited. Patent Document 1: International Publication No. 2003/084292. Patent Document 2: JP-A-2005-38634. Patent Document 3: JP-A-2004-172102. 5 Patent Document 4: JP-A-2004-315661. Patent Document 5: JP-A-2005-353595. Non-patent literature 1: C_W.Tang, S.A.Vanslyke, Applied Physics

Letters, Vol. 51, 913, 1987. Non-Patent Document 2: S. Coe_Sullivan et al, Organic Electronics, 10 4 (2003) 123-130. Non-Patent Document 3: V. Bulovic and M. Bawendi, SID 06 Digest 35·1 (2006) 1368-1371. Non-Patent Document 4: S. Coe et al., Nature, 420 (2002) 800-803. 15 Non-Patent Document 5: H. Mattoussi et al., J. Appl. Phys., 83 (1998) 7965-7974. Non-Patent Document 6: B. O. Dabbousi and M. G. Bawendi, Appl. Phys丄ett. 66 (1995) 1316-1318. Special Spear ij Document 7: S. Coe-Sullivan et al, Adv. Funct. Mater, 20 15 (2005) 1117-1124. SUMMARY OF THE INVENTION An object of the present invention is to provide a light-emitting element which can realize a gray scale display without color change and has practical brightness. [Item h inside] ► Revealed note 8 200850054 The following light-emitting elements are provided in accordance with the present invention. L includes a light-emitting element in which the anode, the light-emitting layer, and the cathode are sequentially laminated, and the light-emitting layer contains nanocrystal light-emitting fine particles and is driven by pulse width modulation. 5 2. A light-emitting element comprising a hole transport layer between the anode and the light-emitting layer. 3. A light-emitting element such as i having an electron transport layer between the anode and the light-emitting layer. 4. A light-emitting element comprising a hole transport layer between the anode and the light-emitting layer, and comprising an electron transport layer between the light-emitting layer and a cathode. 5. The anode and the cathode are included, and at least two light-emitting layers formed of nanocrystal-containing luminescent particles are included between the anode and the cathode, and at least one intermediate connection layer is formed between the light-emitting layers, and A light-emitting element driven by pulse wave modulation. 15 _ 6. The thickness of the light-emitting layer is a light-emitting element of any one of 1 to 5, such as 1 to 5. 7. The light-emitting element according to any one of 1 to 6 wherein the nanocrystal luminescent fine particle semiconductor nanocrystal is crystallized. > 8. The above-mentioned semiconductor nanocrystal system core-shell semiconductor nanocrystals <Light-emitting element of 7, according to the present invention, it is possible to provide a light-emitting element which can realize a gray scale display without color change and has practical brightness. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing a schematic view of a first embodiment of a light-emitting device of the present invention. Fig. 2 is a schematic cross-sectional view showing a second embodiment of the light-emitting element of the present invention. Fig. 3 is a view showing a table of voltage-luminance 5 characteristics of the light-emitting element manufactured in Example 1. Fig. 4 is a view showing a table of voltage dependence of an emission spectrum of a light-emitting element manufactured in Example 1. Fig. 5 is a graph showing the luminance correlation of the chromaticity after the light-emitting element manufactured in Example 1 is driven by the pulse width modulation. Fig. 6 is a graph showing the luminance dependence of the chromaticity of the light-emitting element manufactured in Example 1 after being driven by a voltage gradient. Fig. 7 is a view showing a table of voltage-luminance characteristics of the light-emitting elements manufactured in Example 2. Fig. 8 is a graph showing the luminance dependence of the chromaticity of the light-emitting element manufactured in Example 2 after being driven by the pulse width modulation. t. BEST MODE FOR CARRYING OUT THE INVENTION The light-emitting device of the present invention comprises an anode, a light-emitting layer and a cathode which are sequentially laminated, and the light-emitting layer contains nanocrystal light-emitting fine particles, and the light-emitting diode element is modulated by a pulse width. Variable driver. The light-emitting element of the present invention preferably comprises a hole transport layer between the anode and the light-emitting layer, and/or an electron transport layer between the light-emitting layer and the cathode. Furthermore, a light-emitting device according to another aspect of the present invention includes an anode and a cathode, and includes at least two light-emitting layers formed of particles containing nanocrystal light-emitting micro-200850054 between the anode and the cathode, and at least between the light-emitting layers. There is one intermediate connection layer, and the aforementioned light-emitting element is driven by a pulse width modulation. An example of the elements of the present invention will be described using the drawings. Fig. 1 is a schematic cross-sectional view showing a first embodiment of a light-emitting device of the present invention. In the light-emitting element 1, an anode 10, a hole transport layer 20, a light-emitting layer 30, an electron transport layer 4, an electron injection layer 50, and a cathode 60 are sequentially laminated on a substrate (not shown), and an anode 1 and a cathode are laminated. 60 is electrically connected through the pulse width modulation control device 70. The light-emitting element 1 emits light by a hole supplied from the hole transport layer 20 in combination with electrons supplied from the electron transport layer 40. The light-emitting layer 30 is formed by containing nanocrystal light-emitting fine particles, and since the nanocrystal light-emitting fine particles are inorganic substances as described below, there is an advantage that the organic matter is less likely to be deteriorated. 15 Further, if the crystalline crystallites of nanocrystals crystallize, the excited state has the property of mixing singlet and triplet states, and its lifetime is usually as short as 10 to 4 ns, which can reduce the application of high current to phosphorescence. The type of organic EL element is sometimes an exciter of the problem - the exciton pair is eliminated. In addition, the mixed suspicious sorrows are characterized by the fact that they are easily captured by the adjacent donor site (d〇n〇r site), and contain nanocrystals and doublet excitons. The light-emitting elements of the microparticles can achieve high efficiency.

The light-emitting element of the present invention is driven by pulse width modulation. The pulse width modulation is controlled by the external application voltage (or current) when the light is emitted (10), and by changing the time to become 〇N (pulse width), or changing 〇N 11 200850054 and OFF Time ratio (working ratio), which is used as a driving method for modulating the brightness of the average time. By driving the light-emitting element with the pulse width, the applied voltage can be made constant, and the chromaticity can be suppressed from changing due to the brightness. The pulse width is not limited to, for example, 1/zs to 100ms, and 5//s to 20ms is preferred. If the pulse width is smaller than the electric time constant of the light-emitting element, a sufficient voltage cannot be applied to the light-emitting element, and sufficient light emission cannot be obtained. If the pulse width exceeds 1 〇〇ms, there will be flickering on the displayed image. It can be taken as 1% as a work ratio. Further, in the first embodiment, the light-emitting layer 3 is composed of 10 particles of one layer of nanocrystalline light-emitting fine particles, but the present invention is not limited thereto. The light-emitting layer may be, for example, two or more layers, or may have voids, within a range not impairing the effects of the present invention. Further, the light-emitting layer may be a light-emitting layer composed only of nanocrystal light-emitting fine particles, or may be a light-emitting layer composed of a medium of a knife-shaped nanocrystal light-emitting fine particle. When the light-emitting 15 f composed of the medium of the knife-shaped nanocrystalline crystal light-emitting particles is used as the light-emitting layer, the medium can be expected to maintain the charge transport property, and the medium 3 can also serve as a 1-hole transport layer, an electron transport layer, and an electron. Injection layer or intermediate connection layer. 20 points constructor. The structure of the present invention is not limited to the above-described embodiment, and is, for example, a structure of the following (1) to (10) or a portion having the following structure (1) anode/hole transmission (2) anode/electricity Hole injection cathode. Delivery layer / luminescent layer / electron transport layer / cathode. Incoming/hole transport layer/light-emitting layer/electron transport layer/feed layer/electron injection layer/(3) anode/cavity transport layer/light-emitting layer/electron input 12 200850054 cathode (Fig. 1). (4) Anode/hole injection layer/electron injection layer/cathode. Hole transport layer / luminescent layer / electron transport layer / 5 (5) anode / insulation layer / hole transport layer / luminescent layer / electron transport layer / negative nucleus. () anode / hole transport layer / luminescent layer / electron transport layer human insulation / shade. (7) Anode /! Bar layer / hole transport layer / luminescent layer / electron transport layer / insulation (8) anode / electricity,; insulation layer / cathode. Same as injection layer/hole transfer layer/light-emitting layer/electron transport layer/chuan... (9) anode/insulation layer/hole injection layer/hole transport layer/light-emitting layer transport layer/electron injection layer/cathode. , (10) Anode /! Bar layer / hole injection layer / hole transport layer / light-emitting layer / electron transport layer / electron injection layer / insulation layer / cathode. (8) In the month of construction, it is generally preferable to use the structures of (1), (7), (3), (4), (7), 15 and (10). - In the first drawing, although the light extraction direction is not described, the light-emitting element of the present invention may be of the top emission type or the bottom emission type, and the electrode on the side from which the light is taken out is transparent. Light. Fig. 2 is a schematic cross-sectional view showing a second embodiment of the light-emitting device of the present invention. In the light-emitting element 2, between the anode 10 and the cathode 60, light-emitting portions 90 and 92 which are formed by sequentially stacking the hole transport layer 20, the light-emitting layer 3A, and the electron transport layer 40 from the anode side, and the anode 10 and the cathode are laminated. 60 is electrically connected through the pulse width modulation control device 7. Further, 13 200850054 intermediate connection layer 80 is held between the two light-emitting portions 90 and 92. In the light-emitting element 2, the light-emitting portion 90 is injected into the hole from the anode 10, and electron-emitting light is injected from the intermediate connection layer 80. Further, the light-emitting portion 92 injects electrons from the electrons and the main inlet 50, and injects holes from the intermediate connection layer 80 to emit light. 5 The luminance obtained by the voltage of the light-emitting range mainly of the light-emitting layer (the light emission of the electron transport layer or the like is extremely small) is limited, but the hole transport layer 20, the light-emitting layer 30, and the electron transport layer 4 are laminated by a plurality of layers. The light-emitting portion constituting the erbium increases the voltage even if it is applied, but the illuminance is increased substantially in proportion to the number of layers of the luminescent layer, so that the light-emitting element 2 can obtain a desired degree of 10 degrees. As a result, the voltage applied to each of the light-emitting layers is suppressed in a voltage region in which the electron-transporting layer or the like does not emit light, and only the nanocrystal-crystal-emitting fine particles are mainly emitted, and the light-emitting element can obtain practical brightness. Further, in the present embodiment, the light-emitting portions 9A and 92 of the two layers may be different or the same. Further, in this embodiment, the light-emitting element has two layers, but if the intermediate connection layer is laminated between the light-emitting portions, two or more layers may be laminated. When there are two or more intermediate connection layers in the laminate, the intermediate connection layers may be different or the same. Further, although the light-emitting portions 90 and 92 are composed of a hole transport layer, a light-emitting layer, and a private transport layer, the structure of the light-emitting portion of the present invention is not limited to the above. The light portion may be, for example, a structure in which the anode and the cathode are removed or a partial structure thereof is removed in the light-emitting element structures (1) to (10) described above. Hereinafter, each constituent member of the light-emitting element of the present invention and the [light-emitting layer] 14 used therein will be described. The light-emitting layer of the light-emitting element of the present invention is formed by containing nanocrystal light-emitting fine particles. The light-emitting layer may be a light-emitting layer composed only of nanocrystalline light-emitting fine particles and a medium composed of a medium in which nanocrystalline light-emitting fine particles are dispersed. When a light-emitting layer composed of a medium in which nanocrystalline crystal light-emitting fine particles are dispersed is used as the light-emitting layer, the medium is preferably a material having electron transport characteristics or the same transfer characteristics, and may be suitably used for the following electricity. The material of the hole conveyor layer and the electron transport layer. The nanocrystalline crystal luminescent fine particles used in the light-emitting layer are composed of inorganic nanocrystals in which inorganic crystal 0 is crystallized to a nanometer level. The use of absorbable y and/or near-ultraviolet light and emit visible fluorescent light as the inorganic nano-crust day is high in transparency and small in scattering loss, and it is preferred to use the ultrafine particle size to be below 2 〇 nm, preferably. It is an inorganic nanocrystal of l〇nm or less. The surface of the inorganic nanocrystals should also be compatible. For example, the inorganic nanocrystal used in the present invention may be modified by a long-chain alkyl group, a dish acid, a resin or the like. The inorganic nanocrystal used in the present invention may be specifically exemplified as follows. (la) a nanocrystalline fluorescent phosphor doped with a transition metal ion in a metal oxide, and a nanocrystalline fluorescent oxide 0 doped with a transition metal ion in a metal oxide, for example, in Y2〇3, Metal oxides such as Gd2〇3, Zn〇, Y3Al5〇i2, and Zn2Si〇4 are doped with transition metal ions such as shame 2+, Eu3+, Ce3+, and Tb3+ which absorb visible light. (Ι-b) a nano-crystal of a transition metal ion doped with a metal chalcogenide, and a crystalline phosphor 15 200850054 A nanocrystalline phosphor which is doped with a transition metal ion in a metal chalcogenide may be, for example, The metal chalcogenide such as ZnS, CdS or CdSe is doped with transition metal ions such as Eu2+, Eu3+, Ce3+, and Tb3+ which can absorb visible light. In order to prevent S and Se from being separated by the reaction component of the following matrix resin, surface modification may be carried out by using a metal oxide such as cerium oxide or an organic substance. (1-c) Nanocrystalline crystal phosphor (semiconductor nanocrystal) which absorbs visible light and emits light by using the energy gap of the semiconductor. The material of the semiconductor nanocrystal is, for example, a group IV element of the long-period periodic table, Ila. A compound composed of a compound of the group element _vIb element, a compound of the nia group element _Vb group 10 element, a compound of the group Ilb element element - the group Vb element, a chalcopyrite type compound or the like. Specifically, Lu may include, for example, Si, Ge, MgS, MgSe, ZnS,

ZnSe, ZnTe, A1P, AlAs, AlSb, GaP, GaAs, GaSb, CdS, CdSe, CdTe, InP, InAs, InSb, AgAlAs2, AgAlSe2, AgAlTe2, 15AgGaS2, AgGaSe2, AgGaTe2, AgInS2, AgInSe2, AglnTe, ZnSiP2 ZnSiAs, ZnGeP2, ZnGeAs, ZnSnP2, ZnSnAs, ZnSnSb2, CdSiP2, CdSiAs2, CdGeP2, CdGeAs2, CdSnP2, CdSnAs2, etc., and mixed crystals composed of the elements or compounds. 20 should be Si, A1P, AlAs, AlSb, GaP, GaAs, InP, ZnSe,

ZnTe, CdS, CdSe, CdTe, CuGaSe2, CuGaTe, CuInS2, CuInSe2, CuInTe2, and ZnSe, ZnTe, GaAs, CdS, CdSe, CdTe, InP, CuInS2, CuInSe2 which are direct transition semiconductors are more preferable because of high luminous efficiency. 16 200850054 Even in the case of inorganic nanocrystals, the wavelength of light can be easily controlled by the particle size, and in the blue wavelength range and the near ultraviolet wavelength range, and there is a large absorption force, and absorption in the light-emitting range The degree of overlap between force and luminescence is large, so it is preferable to use semiconductor nanocrystals. 5 10 15 Hereinafter, the function of semiconductor nanocrystals will be described. As is known in the literature, such as the special surface layer - 5, and the like, the semiconductor material has a band gap of about 0.5 to 4. 〇eV at room temperature in the form of a bulk material (in the case of a material which is not microparticulated). The microparticles are formed from the materials, and the electrons of the semiconducting electrons are sealed by the size of the nanometers. As a result, the energy gap in the nanocrystals becomes large. Theoretically, it is known that the width of the energy gap becomes larger than the square of the semiconductor particle size. Therefore, the energy gap can be controlled by controlling the particle size of the semiconductor fine particles. The semiconductors absorb light of a wavelength smaller than the wavelength of the energy gap and emit fluorescence corresponding to the wavelength of the energy gap. The energy gap of the bulk semiconductor is 2 (rcirl 〇eV~3 Liu is better. If it is lower than l.OeV', because the wavelength of the fluorescent light is sensitively excessively shifted with respect to the change of the particle size during the crystallization of the nano, it is difficult Manufacturing management is not good. Also, if it exceeds 3 〇V, it will only emit fluorescent light with a short wavelength near the ultraviolet field. 'It is not easy to use::: The application of optical devices is not good. Semiconductor nanocrystals can be manufactured by well-known methods. The method described in U.S. Patent No. 6,501,091. The production example contained in the publication is a mixture of trioctylphosphine selenide and dimethylcadmium precursor solution mixed with trioctylphosphine (TOP). The method of heating to 350 ° C ri β • ~ dioctyl phosphine oxide (ΤΟΡΟ) 17 200850054 The above semiconductor nanocrystal is preferably a core composed of core particles and at least a shell layer of the outer layer - shell type V body The crystal is not crystallized, and the foregoing core is composed of ruthenium crystal, and the shell layer is made of a semiconductor material having a large energy semiconductor material of the energy gap = external: (4) = the inner k-type semiconductor nanocrystal has, for example, Zns (a shell of semiconductor material capable of ''energy gap') The structure of the surface of the core fine particles composed of Cdse (energy gap: 1.74 ev) is coated, whereby the sealing effect of the excitons generated in the core fine particles is easily exhibited. In the specific example of the semiconductor nanocrystal, The active component (unreacted early body, water, etc.) in the following transparent medium may cause s or lion lions, and it is easy to cause crystal structure destruction of nanocrystals and flashing of the material. Therefore, it is also possible to oxidize the metal. The surface modification of the oxide or the organic substance is carried out to prevent the above phenomenon. The nanocrystal of the core-shell type semiconductor can be produced by a well-known method, for example, as described in U.S. Patent No. 6,5,1, 〇91 For example, if it is a CdSe core/ZnS shell structure, it can be heated to 140 C by the mixture of di-zinc and trimethylsilyl in the τ〇ρ. It is also produced by a TOPO solution in which CdSe core particles are dispersed. 20 Further, a so-called Typell type nanocrystal in which an exciton-forming carrier is separated between a core and a shell can be used (J. Am. Chem. Soc., Vol. 125). , Νο·38 , 2003, pll466-11467) In addition, it is also possible to use a layer structure of two or more layers on the core as a multi-shell structure, and the stability, luminous efficiency, and adjustment of the emission wavelength are improved. 18 200850054 Nanocrystals (Angewandte Further, the above-mentioned luminescent fine particles may be used singly or in combination of two or more. 5 The thickness of the luminescent layer of the luminescent element of the present invention is preferably 1 to 100 nm. . When the thickness of the light-emitting layer exceeds 100 nm, the resistance of the element increases, whereby the driving voltage of the element rises and the power consumption increases. On the other hand, when the thickness is less than 1 nm, the density of the luminescent fine particles present in the luminescent layer is too low, and there is no possibility of having the function of the luminescent layer. In the light-emitting layer of the present invention, the light-emitting layer of the light-emitting element can be formed by, for example, casting or rotating a mixed solution prepared by dispersing the light-emitting fine particles in a solvent, followed by drying. In addition to the foregoing methods, the light-emitting layer of the light-emitting element of the present invention may be subjected to casting 15 or spin coating by, for example, mixing a mixture of a hole transport material or an electron transport material and a light-emitting fine particle in a solvent. Formed by drying. In the method for producing the light-emitting layer, phase separation may be further used to form a layer composed of only luminescent fine particles (one layer of particles or a layered body of two or more layers of particles). [Curve injection/transport layer] The hole injection/transport layer is used to help the hole to be injected into the luminescent layer and transported to the layer of the illuminating field, and the hole mobility is large, and the free energy is usually as small as 5.5 eV or less. Such a hole injection and transport layer is preferably a material that can transport holes to the luminescent medium layer at a lower electric field strength, and, for example, the mobility of the hole when an electric field of 1 〇 4 to 106 V/cm is applied. It is better to be at least i〇.W/v seconds. 19 200850054 The material for forming the hole injection layer and the transport layer is not particularly limited as long as it has the above-described preferable properties, and may be conventionally used as a hole in a light-transmitting material: a charge transport material, or Any one of the well-known ones used for the hole injection/transport layer of the organic EL element is used. Specific examples thereof include a triazole derivative (refer to the specification of U.S. Patent No. 3,112,197, etc.), an oxadiazole derivative (refer to the specification of U.S. Patent No. 3,189,447, etc.), and an imidazole derivative (refer to Japanese Patent Publication No. 37). -16096, and the like, and a polyarylalkane derivative (refer to the specification of U.S. Patent No. 3,615,402, U.S. Patent No. 3,820,989, U.S. Patent No. 3,542,544, the disclosure of Japanese Patent No. SHO 45-555, and Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. 55-105. JP-A-56-36656, etc., u-junjun derivatives and pi-pyrazole derivatives (U.S. Patent No. 3,180,729, U.S. Patent No. 15, 4,278,746, and JP-A-55-88064 Japanese Patent Publication No. Sho 55-88065, JP-A-49-105537, JP-A-55-51086, JP-A-56-80051, JP-A-56-88141 Bulletin 57-45545 and JP-A-54-112637 Japanese Patent No. 3,615,404, the disclosure of which is incorporated herein by reference. Japanese Patent No. 3,567,450, U.S. Patent No. 3,567,450, U.S. Patent No. 3,240,597, U.S. Patent No. 3,658,520, U.S. Patent No. 4,232,103, U.S. Patent No. 4, H5, 961, No. 20, 2008, 5,500, pp., No. 4, No. 4, No. 4, 376, No. 4, No. 49-35702, Japanese Patent Publication No. Sho 39-27577, JP-A-55-144250, JP-A-56-119132 No. K., No. 56-22437, No. 1,110,518, etc.), an amine-substituted chalcone derivative (refer to the specification of U.S. Patent No. 3,526,501, etc.), a carbazole derivative (disclosed) In the specification of the U.S. Patent No. 3,257,203, etc., a styrene-based onion derivative (refer to JP-A-56-46234, etc.), an anthrone derivative (refer to Japanese Patent Laid-Open No. Hei 54-110837)腙 腙 腙 ( ( ( ( ( 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. No. Hei. No. 61-148749 Japanese Unexamined Patent Publication No. Hei. No. Hei. No. Hei. No. 61-72255, No. 61-47646, No. 62-47646, No. 62-47646, No. JP-36-674674, No. 62_1〇652, and No. 62 Japanese Laid-Open Patent Publication No. -30255, JP-A-60-93455, JP-A-60-94462, JP-A-6-174749, JP-A-52-074 U.S. Patent No. 4, pp. 4996, and aniline-based conjugates (Japanese Unexamined Patent Publication No. Hei No. Hei. Things). ^洞注人. Although the material of the transport layer can be (4) the above, it is preferable to use the violet two: the material (disclosed in Japanese Patent Publication No. 63_295695, etc.), the third-grade aromatic sigma and the stupid vinylamine compound (refer to the US patent) In the case of the Japanese Unexamined-Japanese-Patent No. 55-119132, the Japanese Unexamined-Japanese-Patent No. 54-58445 In addition, it is particularly preferable to use a tertiary aromatic amine compound in addition to the use of a tertiary aromatic amine compound, etc., and the material of the hole injection/transport layer. For example, there are two condensed aromatic rings which are contained in the U.S. Patent No. 5,061,569, for example, 4,4'-bis(N-(l-naphthyl)-N-aniline)biphenyl. (hereinafter abbreviated as npd), or 4, 4, 4, and 3 (N-(3-), which are linked to three starbursts of 10 triphenylamine units described in Japanese Laid-Open Patent Publication No. Hei. Toluene, hydrazine, aniline, triphenylamine (hereinafter abbreviated as MTDATA), etc. The material of the hole injection/transport layer is preferably aroma represented by the following formula (1) Amine derivative. [Chemical 1] AT〆 Μ m / 15

Ar10 (1) [wherein, a divalent group consisting of a substituted or unsubstituted arylene group or a heterocyclic group having 5 to 60 carbon atoms, and Ar7 to Ar1G are substituted or unsubstituted, respectively, having a nuclear atom number of 5 a substituent of ～50 or a substituent represented by the following formula: Ar7 and Ar8, Ar9 and Ar1G may be directly bonded to form a condensed heterocyclic ring. 20 [Chemical 2] 22 200850054 > 2〆

Aru

, M

Af12 (wherein L2 is a divalent group consisting of a substituted or unsubstituted arylene group or a heterocyclic group having 5 to 60 carbon atoms; and Aru~Ar12 are substituted or unsubstituted, respectively, having a nuclear atom number of 5 to 50. Substituents.)] 5 Li and L2 may, for example, be 'diphenylene, co-triphenyl, phenanthrene or fluorenylene, and the like, and diphenylene and triphenylene are preferred, and diphenylene is preferred.

Examples of Ar7 to Arp include a biphenyl group, a triphenylene group, a phenanthryl group, a hexyl group, a 1-naphthyl group, a 2-naphthyl group or a phenyl group, and the like, and a biphenyl group, a triphenyl group, and an iota group. , 10 2-naphthyl or phenyl is preferred. In the compound represented by the above formula (1), 'Ar? to Ari0' are preferably the same substituent. In this case, Ac~AnQ is preferably a biphenyl group or a biphenyl group, and more preferably a biphenyl group. Further, in the compound represented by the formula (1), in the substituent of the substituent, Ar8 to Ari are preferably the same substituent. In this case, the private ~ ~ base, triphenyl is preferred, preferably biphenyl, and _ is preferably phenyl, triphenyl, phenanthryl, phenyl, naphthyl, 2-naphthyl Or a phenyl group or the like, which is a biphenyl group, a triphenylene group, a 1-naphthyl group or a phenyl group. More preferably, Ar is a biphenyl group, and is a triphenyl group or a 1-naphthyl group. Further, it is also preferred to have a "benzene ring" and directly combine with Ah, Ah and Ar1G to form a carbazolyl group. Further, in the compound represented by the above formula (1), it is preferred that the compound represented by the above formula (1) has three or more substituents which are different. Ar7, 2 is preferably 23 20 200850054 tert-triphenyl, phenanthryl, anthracenyl, 1-naphthyl, 2-naphthyl or phenyl, etc., preferably biphenyl, terphenyl, 1-naphthalene Further, the phenyl group or the like is more preferably Ar9~Ar1() is a biphenyl group and the hydrazine 7 is a biphenyl group, a 1-methyl group, and Al*8 is a phenyl group. Specific examples of the aromatic amine derivatives which can be used in the present invention are shown below. [Chemical 3] 24 200850054

25 200850054

26 200850054

Α-4 Ο Further, the aromatic amine derivative is preferably polyvinyl carbazole (PVK). In addition to the above, a nitrogen-containing heterocyclic derivative represented by the following formula disclosed in Patent No. 357, 1977 can also be used. 5 [Chemical 4]

(wherein R121 to R126 each independently represent a substituted or unsubstituted alkane 27 200850054, a substituted or unsubstituted aryl group, a substituted or unsubstituted aralkyl group, a substituted or unsubstituted heterocyclic group, however, 〜R126 may be the same or different. Further, R12>RU2, Rl23 and r124, r12>r126, r12%r126, r122 and Rl23, R124 and R125 may also form a condensed ring.) Further, it may be used in US Publication 2004_0113547. A compound of the following formula is described. [化5] ^132

(In the formula, R131 to R136 are a substituent, preferably a cyano group, a nitro group, a sulfonyl group, a carbonyl group, a trifluoromethyl group, a functional group, or the like.) The acceptor material can also be used as a material for the hole injection/transport layer, and specific examples of the materials are as described above. Further, in addition to the aromatic dimethylidyne compound as the light-emitting layer material, an inorganic compound such as _si or p-type 15 Sic may be used as the material of the hole injection layer. The above-mentioned compound can be formed into a hole injection/transport layer by thin film formation by a well-known method such as vacuum evaporation method, spin coating method, casting method, LB method, etc., and the hole is injected into the hole. There is no particular limitation that q is usually 5 nm to 5 " m. When the hole injection/transport layer contains the compound in the hole transfer = 2 〇, the hole may be formed of a layer of the above-mentioned material, or a layer of the above-mentioned material, or may be a layered layer. The hole is injected into the hole injection and transport layer formed by different compounds in the transport layer. [Electron injection/transport layer] The electron injection layer and the transport layer are used to help electrons be injected into the light-emitting layer and 5 to be transported to the layer of the light-emitting region, and the electron mobility is large, and the #+ A layer of a material that is particularly well bonded to the cathode in the electron injecting layer. Although the electron transport layer can appropriately select a film thickness of several nm to several #m, when the film thickness is particularly thick, in order to avoid voltage rise, when an electric field 10 of 104 to 106 V/cm is applied, the electron mobility is at least lCT5 cm2/ Above Vs is better. As the material for the electron injecting layer, a metal complex of hydroxyquinoline or a derivative thereof, or an oxadiazole derivative is preferably used. A specific example of the above-mentioned metal complex of 8-quinone or a derivative thereof is a metal ruthenium containing a ruthenium 15 (generally 8-4 quinolinol or 8-species: lin) Compound 8--. As the oxinoid compound, for example, 'tris(8-porphyrinol)aluminum (Alq3) can be used as the electron injecting material. On the other hand, for example, an electron-transporting compound represented by the following formula may be mentioned as a sigma-disodium derivative. [Chemical 6]

Ar 29 20 200850054 (wherein Ar111, Ar] 12, Ar113, Ar115, Ar] i6 and Αγ119 each exhibit a substituted or unsubstituted aryl group, and may be the same or different from each other. Further, Ar114 and Ar117, The Ar118 series shows a substituted or unsubstituted arylene group, and may be the same or different, respectively.) 5 Here, the aryl group may, for example, be a phenyl group, a biphenyl group, an onion group, a peryl group, or a fluorenyl group ( Further, the arylene group may, for example, be a phenyl group, a naphthyl group, a diphenylene group, an anthranylene group, a petrylenylene group, a succinyl group, or the like. Further, the substituent may be, for example, carbon. The alkyl group, the alkoxy group having a carbon number of 1 to 10, the cyano group, etc. The electron transporting compound 10 is preferably one having a film formability. Specific examples of the electron transporting compound include the following: 7]

30 200850054 [Chem. 8]

5 Μ 取 取 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 无 隐 隐 隐 隐 隐 隐 隐 隐 隐 隐 隐 隐 隐 隐 隐a 6 to 60 aryl group, a substituted or unsubstituted stellate having an inverse number of 3 to 6 Å of a heteroaryl group, a substituted or unsubstituted benzene group, or a substituted or unsubstituted carbon number Κ2〇 Alkoxy groups, or such divalent 10 groups. However, S, Ar21 and yttrium are the substituted or unsubstituted condensed cyclic group having a nuclear carbon number of 10 to 60, a substituted or unsubstituted monohetero condensed cyclic group having a core carbon number of 3 to 6 Å, Or such a two-valent base.

Ar23 is a substituted or unsubstituted arylene group having 6 to 6 carbon atoms, or a substituted or unsubstituted heteroarylene having 3 to 60 carbon atoms. 15 LU, l12 & l13 are each a single bond, a substituted or unsubstituted arylene group having a core carbon number of 6 to 60, a substituted or unsubstituted heteroarylene group having a core carbon number of 3 to 60, or a substitution or no Replace the base. R81 is a hydrogen atom, a substituted or unsubstituted aryl group having a core carbon number of 6 to 60, a substituted or unsubstituted heteroaryl group having a core carbon number of 3 to 60, a substituted or unsubstituted carbon number 31 200850054 1 to 20 alkane a group, or a substituted or unsubstituted alkoxy group having 1 to 20 carbon atoms. n is an integer of 0 to 5, and if η is 2 or more, the plural numbers may be the same or different, or may be bonded to a plurality of adjacent R81 groups to form a carbocyclic aliphatic ring or a carbocyclic aromatic ring. 5 R82 is a hydrogen atom, a substituted or unsubstituted aryl group having 6 to 60 carbon atoms, a substituted or unsubstituted heteroaryl group having a core number of 3 to 60, a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms Or a substituted or unsubstituted carbon number 丨~汕 alkoxy group or -Ln-Ar21-Ar22. a nitrogen-containing heterocyclic derivative represented by the formula (C): 10 HAr-L14-Ar24-Ar25 (wherein, the HAr group may have a substituent having a carbon number of 3 to 4 〇, a nitrogen-containing heterocyclic ring, L14) a single bond, an arylene group having 6 to 6 carbon atoms which may have a substituent, a heteroarylene group having a carbon number of 3 to 60 which may have a substituent, or a stretching group which may have a substituent, and the Ar24 system may also be a divalent aromatic hydrocarbon having 6 to 6 carbon atoms and a aryl group having 6 to 6 carbon atoms which may have a substituent or a carbon number of 3 to 60 which may have a substituent Aryl.) Derivative of SilaCyCl〇pentadiene represented by formula (D): [Chem. 9]

(wherein X11 and Y11 are each independently a saturated or unsaturated sulfonyloxy group, a fine oxy group, an alkynyl oxy group, a thiol group, a transamination group, or a group of 32,500,500,54 or none. a substituted aryl group, a substituted or unsubstituted heterocyclic ring, or a structure in which χ11 and γΐι are combined to form a saturated or unsaturated ring, and R85 to R88 are independently hydrogen, a halogen atom, a substituted or unsubstituted carbon number of 1 to 6 alkyl, alkoxy, aryloxy, perfluoroalkyl, perfluoroalkoxy, amine, burntyl, aryl 5, alkoxy, aryloxycarbonyl, even Nitrogen, alkylcarbonyloxy, arylcarbonyloxy, alkoxycarbonyloxy, aryloxycarbonyloxy, sulfinyl, sulfoyl, sulfanyl, sulfhydryl, amine Mercapto, aryl, heterocyclic, alkenyl, alkynyl, nitro, formyl, nitroso, methyloxy, isocyano, cyanate, isocyanate, sulfur 10 cyanide An acid salt group, an isothiocyanate group or a cyano group, or a structure in which a substituted or unsubstituted ring is condensed in abutment.) A borane derivative represented by the formula (E):

R95 15 (wherein Rr91~R98 and Z2 are each independently a hydrogen atom, a saturated or unsaturated hydrocarbon group, an aromatic group, a heterocyclic group, a substituted amine group, a substituted oxo group, an alkoxy group or an aryloxy group. , X12, ¥12 and 2! are shown as independent and or unsaturated, aryl, aromatic, heterocyclic, substituted, alkoxy or aryloxy groups, and the substituents of anti-Z and 22 are also It can be combined with each other to form a condensation 20 ring, and n is an integer of 1 to 3. If n is 2 or more, ζι can be different. However, η is 1 X , Y and R 92 are methyl and R 98 is hydrogen. Atomic or 33 200850054 Substituted oxyboron, and η is 3 and Z1 is methyl.) [11] (F)

Ga—L15 (wherein Q1 and Q1 each independently represent a coordination 5 of the following formula (G), and L15 represents an i atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted naphthenic group. An aryl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heterocyclic group, -〇R, (R, a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or a non-substituted group Substituted aryl, substituted or unsubstituted heterocyclic) or -0-Ga-Q2 (Q4) (Q2 and Q4 are the same as Q1 and Q1) with a 10-position.) [Chem. 12]

One ( / (G)

I \rnrr Q (wherein, the ring A24 and the Ar25 system may have a 6-membered aromatic ring structure in which the substituents are condensed with each other.) The metal complex is strong as an n-type semiconductor and has high electron injecting ability. Further, since the energy generated by the formation of the complex compound is also low, the metal complex of the formed metal complex is also highly combined, so that the fluorescence quantum efficiency as a light-emitting material also increases. 34 1 Specific examples of the substituents of the ring Α 24 and Ar 25 forming the ligand of the formula (6) can be exemplified by: a gas atom, a desert, a moth, a fluorine, etc.; a methyl group, an ethyl group, a propyl group, a butyl group 200850054, a substituted or unsubstituted alkyl group such as S-butyl, t-butyl, pentyl, hexyl, heptyl, octyl, octadecylsulfonyl, trichloromethyl; phenyl, naphthyl, 3-tolyl a substituted or unsubstituted aryl group such as 3-methoxyphenyl, 3-fluorobenzene, 3-trichloromethylphenyl, 3-trifluoromethylphenyl, 3-nitrophenyl; methoxy, butyloxy, tT 5 oxy, trichloromethoxy, trifluoroethoxy, pentafluoropropoxy, 2,2,3,3-tetrapropoxy, 1,1,1,3,3,3-hexa a substituted or unsubstituted alkoxy group such as 2-propoxy, 6«·(perfluoroethyl)hexyloxy; phenyloxy, p-phenoxy, pt-butylphenoxy a 3-fluorophenoxy group, a pentafluorophenoxy group, a tri-methyl-hydroxy oxime-substituted or unsubstituted aryloxy group; methylthio*(metj1yitj1i〇), 10 ethylthio group, t-butylthio group, a substituted or unsubstituted alkylthio group such as hexylthio, octylthio or trifluorosulfonylthio; phenylthio, p-phenylenethio, p_t_butyl Substituted or unsubstituted arylthio such as thio, 3-fluorophenylthio, pentafluorophenylthio, 3-trifluorotolylthio; cyano, nitro, amine, methylamino, Mono- or disubstituted amine groups such as guanylamino, ethylamino, diethylamino, dipropylamino, dibutylamino, di 15-anilino; bis(ethyloxymethyl)amino, bis(acetonitrile) Anthranyl group such as oxyethyl)amine, bis(acetoxypropyl)amino, bis(ethionoxybutyl)amine; hydroxy, decyloxy, decyl, amidino, decylamine Substituted or absent such as mercapto, dimethylamine, mercapto, ethylamine, diethylamine, propylamine, butylamine, phenylamine, phenylamine 20th generation of aminomethyl thiol; carboxylic acid group, sulfonic acid group, sulfonium imino group, cyclopentyl group, ε hexyl group, etc. cyd〇alkyl; stupid, naphthyl, biphenyl Base, green onion, non-terrane, base, base, ratio. Pyridinyl,.比井井基, kiss 17疋基, "合耕基,三耕基, porphyrinyl, porphyrinyl, acridinyl, pyrrolidine,-dioxanly, piperidinyl (piperWinyi) , porphyrin 35 200850054. Morphooidinyl, piperazinyl, trithiazide (tmhianyi), carbazolyl, furyl, phenylthio, oxazolyl, oxadiazolyl, benzoxazepine, oxime, . It is a stupid base, a benzopyrene base, a three-square base, and a base. Rice sulphate, π decyl group (state (10) state, etc. Further, the above substituted 5 groups may also be combined to form a 6-membered aromatic ring or a heterocyclic ring. In a preferred embodiment of the invention, in the field of transport electrons or cathode The interface region with the organic layer has a component containing a reducing dopant. Here, the reducing dopant is defined as a substance capable of reducing an electron transporting compound. Therefore, 'I is a certain reducing property, and various types can be used. Alternatively, it may be selected from, for example, a metal, a metal, a rare earth metal, an oxide of an genus, an alkali metal, an oxide of a soil, an alkaline earth metal, or a rare earth. At least one substance consisting of a metal oxide or a rare earth metal halide, an organic metal complex, an organic compound of a soil test metal, and an organic complex of a rare earth metal. 15 x 'more specific The preferred reducing dopant is particularly preferably a work function of 2.9 eV or less, and is selected, for example, from Li (working function: eV) Na (working function: 2.36 eV), κ (working function: HV), Rb (for function · 2 l6eV) and &am p; (working function: the group of the alkali metal, or selected from Ca (working function: 2.9 eV), 2 〇 called function · 2 · 〇 ~ 2.5eV), and Ba (working function) :mev) at least one type of alkaline earth metal formed by the group of .m., etc. The 'reducing dopant of the car's father is selected from the group consisting of K, Rb and the group of the metal. Can or &, the best is Cs. 36 200850054. The metal such as Hai has a high reduction ability, and it is expected to increase the luminance and longevity of the light-emitting element by adding a small left human domain. Further, the reducing dopant having a working function of 2.9 eV or less is preferably a combination of the two or more kinds of metal, in particular, a group of Cs containing Cs, for example, Cs and Na, Cs and κ. (10) The rib or the heart is preferably combined with the ruler and the ruler. Since the combination contains Cs, the reduction ability can be efficiently utilized, and by adding to the electron injection range, the luminance of the light-emitting element can be expected to be improved and long-lived. 10 Further, in the present invention, the cathode and the organic layer are provided by an insulator or a semiconductor. Into this, the electron injection layer can effectively prevent the leakage of current and improve the electron injectability. Such an insulator should be selected from the group consisting of metal chalcogenides, alkaline earth metal chalcogenides, and alkali metals. When at least one metal compound of the group consisting of halogenated materials of the compound and the alkaline earth metal is formed of a ruthenium-base metal chalcogenide or the like, the electron injectability can be further improved. The preferred alkali metal chalcogenide may, for example, be Li20, LiO, Na, S, Naje or NaO. Preferred alkaline earth metal chalcogenides may be, for example, CaO, BaO, SrO, BeO, BaS, and CaSe. . Further, preferred halides of the alkali metal include, for example, LiF, NaF, KF, LiCl, KC1, and NaCl. Further, preferred halides of alkaline earth metals include, for example, fluorides of CaF2, BaF2, SrF2, MgF2, and BeF2, or halides other than fluorides. 0 37 200850054 Further, the semiconductor constituting the electron-transporting layer may be, for example, Containing at least species of Ca Sr, Yb, A, Ga, In, Li, Na, Cd, Mg,

One or a combination of two or more oxides, nitrides or oxynitrides of Ta Sb and Zn. 5 X ' is preferably an inorganic film of an inorganic compound which is an electron transport layer, or an amorphous insulating film. As long as the electron transporting layer forms a more homogeneous film with 4S composed of the insulating films, the pixel defects such as dark spots can be reduced. Further, such an inorganic compound may, for example, be a metal sulphur compound, an alkaline earth metal chalcogenide, a metal (6) sputum, or a tooth of a soil test metal. [Intermediate Connection Layer] The intermediate connection layer is a layer that connects the two light-emitting portions. The intermediate connection layer has, for example, a structure in which an acceptor layer, a donor layer, and an electron transport material layer are sequentially laminated from the cathode side. The acceptor layer attracts electrons (accepting electrons) from adjacent light-emitting portions and sends them to the layer of the donor layer. Further, the donor layer injects electrons received from the acceptor layer into a layer of an electron transport material layer (electron donating). The electron transport material layer injects electrons into the layers of adjacent light emitting portions. Further, for example, in the light-emitting element of the second embodiment, when the electron-emitting layer 20 is included in the light-emitting portion, the electron transport material layer of the intermediate connection layer may be omitted. An organic compound that is susceptible to reduction by the system. The ease of reduction of the compound can be determined by an oxidation reduction potential. The oxidation-reduction potential is, for example, a reduction potential of a saturated calomel (SCE) electrode as a reference electrode, preferably -0.8 V or more, more preferably _ 〇 3 v or more and a potential of 38 200850054 (about 0 V). Larger values are particularly preferred for reducing compounds than tetracyanoquinone dimethane (TCNQ). The organic form of the electron ring is preferably a substituent or a defect having an electron attracting property. The electron-attracting substituent may, for example, be a boron group or the like.素, CN... carbonyl, aryl 10 20 electron-deficient ring may, for example, be selected from, for example, 唆 唆 、, 3, 44, 2, 4, 3, 4, 4, 4, 4, 4 (10) Sitting, sitting "荅 、, money" than morphine, ah, 嗜 scale, 香琳, HU, ·) · three silk, 5 like 4 Fu Sansyl, 5-tetrazolyl, 4_(1- 〇, 3-Ν)-carbazole, 5-(i-〇,3-N)-carbazole, 4彳3 n thiazole, 5-(lS,3-N)-thiazole, 2-benzoxazole, It is stupid and carbazole j 4-(1,2,3-Ν)_benzotriene. Sitting, and compounds of the group consisting of benzo (4). Again, it is not limited by these. More specifically, for example, ·(3_(4_ 联基基)·4 苯·5+butylphenyl_1,2,4-trisal) or Bcp (2,9) _Dimethyl_4,7_linked porphyrin). The acceptor is preferably a quinoid derivative, an arylborane derivative, a thiopyran dioxide derivative, a naphthalimide derivative, or the like, and a hexanitrogen derivative. A hexaazatriphenylene derivative or the like. The 酉Kun bamboo organism is preferably a compound shown below. [化 13] 39 x 200850054

Base, alkyl or aryl. However, R1 to R48 are all dehydrogenated or fluorine in the same molecule. X is an electron-based group and is composed of any of the following formulas (1) to (p), and is preferably a structure of (1), (k), or (1). I Nc γ0Ν ^°1Γ〇〇〇^§ r^ooo%|<coor51 (10)丫妒2 (k) ® (10) (η) (〇) (py (wherein, R49 to R52 are hydrogen, respectively) And a fluoroalkyl group, an alkyl group, an aryl group or a heterocyclic group, and R50 and R51 may form a ring.) Y-type - N= or -CH=.) Specific examples of the anthracene derivative include the following compounds. 40 10 200850054 [Chem. 15]

The arylborane derivative is preferably a compound having the following structure. [化16] 41 .101 .101200850054

(In the formula, 'Ar, 1.7, respectively, has an electron-withdrawing ring'), and A, an arylene group having an electron-withdrawing group, and a specific example of an aryl group or 2) 'arylborane derivative The following compounds are exemplified. [Chem. 17]

Particularly preferred are compounds having at least one fluorine as a substituent for a p-aryl group, and examples thereof include tris/5-(pentafluoronaphthyl) ranane (PNB). The quinone imine derivative is preferably a naphathalene tetracarboxylic dimide compound and a pyromellitic dimide compound. The dioxin derivative may, for example, be a compound represented by the following formula (3a) and a compound represented by the following formula (3b). [化 18] 42 200850054

In the formulae (3a) and (3b), r53 to r64 are each a chlorine dentate, a gas-burning group, a cyano group, an alkyl group or an aryl group, and hydrogen or a cyano group is preferred. In the formulas (3a) and (3b), the X system is the same as the X of the formula (la) to (u) 5 which exhibits a pull electron group, and the structure of (1), (k), and (1) is preferred. The halogen, fluoroalkyl, cyano group, alkyl group and aryl group which are not represented by R53 to R64 are the same as those of R1 to R48. Specific examples of the dioxin derivative represented by the formula (3a) and the thioxanthene derivative represented by the formula (3b) are shown below. 10 [Chem. 19]

(wherein tBu is a t-butyl group.) Further, in the above formulas (la) to (li), (3a) to (3b), the electron-withdrawing group X may be a substituent represented by the following formula (X). ) or (y). 15 [Chem. 20] 43 200850054 NC—C== 丄r1(10)(8)

Ar Qingyi C=

Ar110(y) wherein Ar1G9 and Ar11G are substituted or unsubstituted heterocyclic, substituted or unsubstituted aryloxycarbonyl or aldehyde, and preferably pyridine, sigmamorph, or olfactory morpholine. Ar1G9 and Ar11G can also be joined to each other to form a ring structure of 5 or 6 members. The hexanitrogen triphenylene is preferably the structure exemplified below, and is particularly excellent as a compound having an atmosphere. [化21] R65

R^5 R66

10 /*% (wherein R65 is a cyano group, an aryloxycarbonyl group, an alkoxycarbonyl group, a second calcined formazan, a diarylamine formazan, a hydroxyl atom, a nitro group, or a carboxyl group, respectively). Film formability is preferred. That is, the acoustic layer can be formed by vapor deposition. The "film-forming film" can be formed into a flat film by a general film forming method such as vacuum evaporation or spin coating on a substrate. Here, the flat soil is a film having a small unevenness and a surface roughness ( Ra) is preferably 1 nm or less, preferably a surface roughness (Ra) of 1.5 nm or less, and more preferably a surface coarse phase (Ra) of 1 nm or less. In addition, the surface roughness can be measured by atomic force microscopy # (AFM). The film-forming organic compound is preferably amorphous amorphous organic shirt 44 200850054, preferably amorphous benzoquinone derivative, more preferably non-曰曰 and CN-based More than 5 benzene g Kunming derivatives. For example, the aforementioned (CN) 2-TCNQ. The content of the acceptor contained in the receptor layer is preferably iyOO 5 mol% relative to the entire layer, preferably 50 to 1 mol. The receptor layer may contain translucent properties in addition to the receptor, but is not limited thereto. The film thickness of the acceptor layer is preferably from 1 to 100 nm. The donor layer is a layer containing at least one selected from the group consisting of a donor metal, a donor metallization compound, and a donor metal complex as a donor. The donor metal system has a working function of 3.8 eV or less, preferably alkali metal, soil test metal and rare earth metal, preferably Cs, Li, Na, Sr, κ, Mg, Ca, Ba, Yb, Eu. And Ce. The donor metal compound is a compound containing the above-mentioned donor metal, preferably a compound containing an alkali metal, an alkaline earth metal or a rare earth metal, preferably such an ifi compound, an oxide, a carbonate or a boric acid. For example, a compound represented by MOx (M system donor metal, X system 0·5 to 1.5), MFx (x system 1 to 3), and M (C03) x (x system 5 5 to 1.5). 20 The donor metal complex is a complex of the above-mentioned donor metal, preferably an organometallic complex of a metal, an alkaline earth metal or a rare earth metal, and preferably an organic compound represented by the following formula (I) Metal complex. [化22]

η (η 45 200850054 (In the formula, the lanthanide acceptor metal, the Q-based ligand, preferably a derivative of a ferulic acid, a derivative of di-i, a derivative of ruthenium, and an integer of η-line 1 to 4.) Specific examples of the donor metal complex compound include, for example, the Wolfram-Paddle Wheel ([W2(hpp)4]: hpp system 1, 3, 4, 6 described in JP-A-2005-72012. And 7,8-hexahydro-2H-pyrimido[l,2-a]-pyridine), etc. Further, the central metal described in JP-A-11-345687 may be used as an alkali metal or an alkaline earth metal. A phthalocyanine compound or the like is used as the donor metal complex. The above-mentioned donors may be used alone or in combination of two or more. 10 The content of the donor contained in the donor layer is 1 with respect to the entire layer. Preferably, it is 50 to 100% by mole. The body layer may contain a single or plural kinds of substances as long as it is a light transmissive substance in addition to the above-mentioned donor body. , an amine compound, a condensed ring compound, a nitrogen-containing ring compound, a metal complex, etc. may be used, or a metal oxide or a metal nitrogen An inorganic substance such as a substance, a metal compound, or a carbonate is not limited thereto. The film thickness of the donor layer is preferably 1 to 1 〇〇 nm. The electron transport material layer is used, for example, containing a non-aliased compound. The compound having a nitrogen heterocyclic structure is preferably a compound having a nitrogen-containing 5-membered heterocyclic structure. Specifically, it is preferably a compound represented by the following formula (1).

46 200850054 (wherein R1 to R8 are substituted or unsubstituted aryl groups having 5 to 60 nucleus groups, substituted or unsubstituted aryl groups having 5 to 60 carbon atoms, substituted or unsubstituted carbon number 1~ 50 alkyl, substituted or unsubstituted cycloalkyl group having 3 to 50 carbon atoms substituted or unsubstituted, aryl group having 6 to 50 atomic number, substituted or unsubstituted 5 alkoxy group having 1 to 50 carbon atoms a substituted or unsubstituted aryloxy group having a nuclear atom number of 5 to 50, a substituted or unsubstituted arylthio group having a nuclear atom number of 5 to 50, a substituted or unsubstituted alkoxycarbonyl group having 1 to 50 carbon atoms, a substituted or unsubstituted amino group having 5 to 50 aryl groups substituted with an amine group, a halogen atom, a cyano group, a nitro group, a hydroxyl group or a carboxyl group, and a group of adjacent substituents of R1 to R8 may be bonded to each other to form a group. The aryl group is a musk ring or a hetero ring.) Further, a compound represented by the following formula (2) can be used. [Chem. 24]

(wherein R9 to R2G are a hydrogen atom, a substituted or unsubstituted aryl group having 5 to 60 15 aryl groups, a substituted or unsubstituted heteroaryl group having 5 to 60 carbon atoms, a substituted or unsubstituted carbon number 1 to 50 alkyl, substituted or unsubstituted cycloalkyl having 3 to 50 carbon atoms, substituted or unsubstituted aralkyl group having 6 to 50 atomic number, substituted or unsubstituted carbon number 1 to 50 An oxy group, a substituted or unsubstituted aryloxy group having a core number of 5 to 50, a substituted or unsubstituted arylthio group having 5 to 50 atomic number, a substituted 20 or an unsubstituted alkoxy group having 1 to 50 carbon atoms. A group of a carbonyl group, an amine group substituted with a substituted or unsubstituted aryl group having a core number of 5 to 50, a halogen atom, a cyano group, a nitro group 47 200850054, a group of adjacent groups of a radical or a thiol group and R9 to R2G The aromatic ring may be bonded to each other, and at least one of R9 to R2G is a substituent represented by the following formula: (L-substituted or unsubstituted arylene group having 6 to 60 carbon atoms, substitution or Unsubstituted heteroarylene having 5 to 60 carbon atoms, or substituted or unsubstituted exudylene; Ar1 substituted or unsubstituted arylene having 6 to 60 carbon atoms, substituted or unsubstituted Arbitrarily substituted or substituted or unsubstituted; Ar2 hydrogen atom, substituted or unsubstituted aryl group having 5 to 60 nucleus, substituted or unsubstituted ur than biting 10 group, substituted or none Substituted porphyrin group, substituted or unsubstituted alkyl group having 1 to 5 carbon atoms, substituted or unsubstituted carbon group having 3 to 50 carbon atoms, substituted or unsubstituted core atom number 6 to 50 a substituted, unsubstituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group having a nuclear atom number of 5 to 50, a substituted or unsubstituted aryl group having 5 to 50 atomic number, and a substitution Or an unsubstituted alkoxycarbonyl group having a carbon number of 丨~刈15, an amine group substituted with an aryl group having a substituted or unsubstituted core number of 5 to 50, a hydroxyl atom, a cyano group, a nitro group or a carboxyl group .)) Specific examples of the compound represented by the formula (2) are exemplified below. [Chem. 26] 48 200850054

(In the formula, Rla to R5c, La to Lc, and Arla to Ar2c# are respectively the same as R9 to R20, L, Ar1, and Ar2 of the above formula (7).)

La~Le and Arla~Arle are preferably substituted or unsubstituted phenyl, substituted or 5 unsubstituted diphenylene, substituted or unsubstituted anthracenyl, substituted or unsubstituted anthracenylene, Or a substituted or unsubstituted stretch of pyridylene. Preferred are a phenyl group, a methyl group substituted with a diphenylene group, an anthranyl group or an anthracenylene group.

Ar2a~Ar2e are substituted or unsubstituted phenyl, substituted or unsubstituted 10 phenyl, substituted or unsubstituted triphenyl, substituted or unsubstituted naphthyl, substituted or unsubstituted carbon number 6~20 Aryl. Preferred are a phenyl group, a phenyl group substituted with a methyl group, a biphenyl group, a triphenyl group, a naphthyl group, and a phenyl group substituted with a naphthyl group.

Rla and Rle are preferably a substituted or unsubstituted alkyl group having a carbon number of 66, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms. Preferred are methyl, ethyl, propyl, 15 butyl, phenyl, stylyl substituted with methyl, phenyl, naphthyl. 49 200850054 p 2b 2C , , R are preferably a hydrogen atom, a substituted or unsubstituted carbon number, an alkyl group, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms. Preferred are methyl, ethyl, propyl, butyl, phenyl, stylyl substituted with methyl, biphenyl, naphthyl. R3b to R6b and R3e to R6e are preferably a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 6 moles, a substituted or unsubstituted aryl group having 6 to 20 carbon atoms, and a cyano group. Preferred are a hydrogen atom, a methyl group, a phenyl group, a biphenyl group, a naphthyl group, a cyano group, or a di-methyl group. The film thickness of the pen transport material layer is preferably 0.1 to 1 〇〇 nm. Further, as described above, the intermediate connecting layer is a laminate of the acceptor layer, the donor layer and the electron transporting material layer, but the other intermediate connecting layer may be a well-known intermediate connecting layer. The material constituting such an intermediate connection layer can be, for example,

Metal oxides, nitrides, iodides, borides, etc. of In, Sn, Zn, Ti, Zr, Hf, V, Mo, Cu, Ga, Sr, La, Ru, and the like. Further, a polyvalent metal compound composed of a plurality of kinds of such metals may be mentioned, and specific examples thereof include ITO, IZO, SnOx, ZnOx, TiN, ZrN, HfN, TiOx, VOx, MoOx, and Cul'. InN, GaN, CuA102, CuGa02,

SrCu2〇2, LaB6, Ru〇x transparent conductive material. Among them, conductive metal oxides such as ITO, IZO, SnOx, ZnOx, TiOx, VOx, MoOx, and RuOx are particularly suitable. In order to enhance the viewing angle characteristics and the like of the light-emitting element, a film containing a low refractive index and the aforementioned transparent conductive material may be used as the intermediate connection layer. As the low refractive index material, an inorganic compound such as a metal oxide (SiOx or the like) or a metal fluoride (NaF, LiF, CaF2, Na3AlF6, A1F3 'MgF2, ThF4, LaF4, NdF3, etc.) or a fluorine-containing resin can be used. Compound. 50 200850054 [Substrate] The light-emitting element of the present invention is produced on a substrate. The substrate referred to herein is a substrate for supporting a light-emitting element, and is preferably a smooth substrate having a light transmittance of 50% or more in a visible region of 4 Å to 7 〇〇 11111. Specifically, a glass plate or a polymer plate is exemplified. For the glass plate, for example, lime glass, glass containing bismuth pin, mis-glass, alumite glass, borosilicate glass, barium borosilicate glass, quartz, and the like can be mentioned. Further, examples of the polymer plate include polycarbonate, acrylic acid, polyethylene terephthalate, polyestersulfide, and p〇lysuifone. Further, if the support substrate is located on the opposite side of the light extraction direction, light transmission is not required. [Anode] The anode of the light-emitting element serves as a hole for injecting a hole into the hole transport layer or the light-emitting layer. When the anode side requires transparency, indium tin oxide 15 alloy (IT0), tin oxide (NESA), and oxidation can be suitably used. Indium alloy (IZ0) 'Gold, silver, platinum, copper, etc. Further, in the case of a reflective electrode which does not require transparency, a metal or an alloy such as aluminum, molybdenum, chromium or nickel may be used in addition to the metals. These materials may be used singly, and alloys of the materials or materials to which other elements are added may be appropriately selected and used. When the light emitted from the luminescent layer is taken out from the anode, the transmittance of the luminescent light with respect to the anode is preferably more than 1%. Further, the sheet resistance of the anode is preferably several hundred Ω / □ or less. Although the film thickness of the anode is also determined depending on the material, it is usually selected from 1 Onm to 1 // rn ' and preferably in the range of 1 〇 to 2 〇〇 nmi. [Cathode] 51 200850054 Metals, alloys, electrically conductive compounds and mixtures of these having a small constant (4 eV or less) can be used as the electrode material in the cathode. Specific examples of such an electrode material include sodium, sodium-potassium alloy, magnesium, strontium, strontium, silver, and oxidized! Lu, | Lu · Zhong alloy, steel, rare earth metals. The cathode can be formed by forming the film by the method of sputtering (4) sputtering or the like. Here, when the light emitted from the light-emitting layer is taken out from the cathode, the transmittance of the light emitted from the cathode is preferably more than 10%. Further, the sheet resistance of the cathode is preferably several hundred Ω / □ or less, and the film thickness is usually 10 nm to 10 nm, preferably 5 Å to 2 〇〇 nm. [Insulating Layer] The light-emitting element is an ultra-thin film that is applied to an ultra-thin film. It is easy to produce a defect due to leakage or short-circuit. To prevent this, an insulating film layer may be inserted between a pair of electrodes. 15 Materials used for the insulating layer include, for example, oxidation, fluorination clock, lithium oxide, fluorinated planing, cerium oxide, magnesium oxide, magnesium fluoride, calcium oxide, calcium fluoride, barium carbonate, and nitriding Oxidation, oxidized stone, oxidation, nitriding, boron nitride, molybdenum oxide, cerium oxide, vanadium oxide, and the like. Mixtures or laminates of the temple can also be used. 2. In the light-emitting device of the present invention, the formation method of each layer is not particularly limited, but a vacuum deposition method, an LB method, a resistance heating vapor deposition method, an electron beam method, a sputtering method, a molecular lamination method, a coating film can be used. Various methods such as a spin coating method, a casting method, a β coating method, a He ink method, and a printing method. Further, the film thickness of each organic layer of the organic EL device of the present invention is not particularly limited to 52,500,500,54, but generally, when the film thickness is too thin, defects such as pinholes are likely to occur, and if it is too thick, a higher voltage is applied. The efficiency is deteriorated, so it is usually within the range of 11111 to 1 #m. [Embodiment] 5 Next, the present invention will be described more specifically by way of examples, and the present invention is not limited to the embodiments. Further, the luminance and chromaticity of the elements fabricated in the respective examples were measured using a spectroradiometer (CS-1000, manufactured by Minolta). In addition, an arbitrary function generator (manufactured by BIOMATION Co., Ltd., 2202A) was used as the pulse-wave visibility modulation control device, and a power amplifier (NF4005 manufactured by Νρ Circuit Design Co., Ltd.) was used to amplify the output and was applied to the example. Component, find its characteristics. Example 1 IT0 (anode) was formed into a film having a thickness of 120 nm on a glass substrate having a thickness of 7 mrn as a glass substrate with a transparent electrode. 15 Dispersing CdSe/ZnS core-shell semiconductor nanocrystals (luminescence peak wavelength: 590 nm, emission half-width: 30 nm) in chloroform, and absorbing the wavelength of the long wavelength side (575 nm) The absorbance of the rice crystal/trichloromethane dispersion lcm was adjusted to 2.04. Further, the absorbance was measured using a UV-3100S spectrophotometer (manufactured by Shimadzu Corporation) and an angular optical cell having an optical path length of 20 lcm. 0.02 g of N,N,-biphenyl-N,N,-bis(3-toluenebiphenyl)-4,4'-diamine (butanol 0) was added to 2.48 g of the dispersion to obtain 2.5 § Mixture. The ITO film of the glass substrate with the transparent 53 200850054 electrode was formed by spin coating (15 rpm, 30 seconds) in a nitrogen sealing hand working box which has been controlled to a low oxygen concentration and a low humidity. The side of the side is covered with an ITO film. Further, the spin coating is carried out in a nitrogen sealing kit which has been controlled to have a low oxygen concentration and a low humidity. The cross section of the substrate was observed by a transmission electron microscope, and it was found that the semiconductor nanocrystals were crystallized and formed a layer on the surface of the TPD film, and the thickness of the 5 TPD+QD layer was 40 nm. Further, the diameter of the semiconductor nanocrystal is 7 nm. Further, the TPD layer has a function as a hole injection layer, and the QD layer has a function as a light-emitting layer. The obtained substrate was moved into a vacuum vapor deposition apparatus, and additional film formation was carried out by a vacuum evaporation method known in the art to produce a light-emitting element having the following structure. Element configuration: glass substrate (0.7 mm) / IT 〇 (130 nm) / TPD + QD (40 nm) / TAZ (10 nm) / Alq3 (30 nm) / LiF (lnm) / Al (150 nm). In the above light-emitting element, TAZ is 3-(4-diphenyl)-4-phenyl-5-tert-butylphenyl-1,2,4-triazole. Further, in the light-emitting element, TAZ and Alq3 15 have functions as an electron transport layer and an electron injection layer, respectively, and LiF and A1 have functions as a cathode. A voltage was applied to the light-emitting element, and its characteristics were evaluated. Fig. 3 is a graph showing the voltage_luminance characteristics of the light-emitting element of Example 1. The light-emitting element of Example 1 gave a luminance of 200 nit at an applied voltage of 25V. 20 Fig. 4 shows the applied voltage dependence of the luminescence spectrum of the obtained light-emitting element. In the light-emitting element, the light emission near the wavelength of 59 〇 nm belongs to the luminescence of the semiconductor nanocrystal, and the luminescence spectrum of Fig. 4 is normalized by the peak. The shoulder of the spectrum observed around the wavelength 520mn belongs to the luminescence of Alq3, and it is confirmed that the intensity of the shoulder relatively increases with respect to the luminescence of the semiconductor nano 54 200850054 as the applied voltage increases. As is clear from Fig. 4, in order to suppress the light emission of Alq3, the light emission of the semiconductor nanocrystal is efficiently utilized, and the applied voltage is preferably 22 V (corresponding to a luminance of 6 〇 nit) or less. 5 The light-emitting element obtained by driving a rectangular light having a voltage amplitude of 0 to 22 V and a frequency of 100 Hz was used to measure luminance and chromaticity change in a rectangular wave operating ratio of 0 to 100%. The luminance dependence of the chromaticity of the illuminating element is shown in Fig. 5. The light-emitting element of Example 1 which was driven by the pulse width modulation was almost free from chromaticity change with respect to luminance change, and a good driving result was obtained. 10 Comparative Example 1 The light-emitting element manufactured in Example 1 was driven by a DC voltage gradient. The luminance dependence of the chromaticity of the illuminating element is shown in Fig. 6. The chromaticity of the light-emitting element driven by the voltage gradient is largely changed by the brightness, and it is found that it is difficult to use it for display use or backlight use. 15 Example 2 ITO (anode) was formed on a glass substrate having a thickness of 77 mm on a glass substrate having a thickness of 120 nm as a glass substrate with a transparent electrode. Dispersing C d S e / Z n S core-shell semiconductor nanocrystals in chloroform and absorbing a very large wavelength (575 nm) of the long-wavelength side of the semiconductor nanocrystals The absorbance of the long-term liquid lcm is adjusted to 2.04. To the dispersion of 1.43 g, OPD of O.Olg was added, and then chloroform was added to obtain a mixed liquid of 3.5 g. One half of the mixture was spin-coated (1500 rpm, 30 seconds) on the ITO film side of the formed glass substrate with transparent electrodes in a nitrogen-sealed handle box that has been controlled to a low oxygen concentration and low humidity. On the surface, to cover the ITO film. Further, the spin coating is carried out in a nitrogen sealing kit which has been controlled to have a low oxygen concentration and a low humidity. The cross section of the substrate was observed by a transmission electron microscope, and it was found that the semiconductor nanocrystals were crystallized on the surface of the TPD film to form a layer, and the thickness of the TPD + QD layer was 20 nm. Further, the diameter of the semiconductor nanocrystal was 7 nm. In addition, the TPD has a function as a hole injection layer, and the QD layer has a function as a light-emitting layer. The obtained substrate was moved into a vacuum evaporation apparatus, and a part of the elements having the following structures were produced by a vacuum evaporation method well known. Element 10 Construction: Glass substrate (0.7 mm) / ITO (130 nm) / TPD + QD (20 nm) / TAZ (10 nm) / Alq3 (30 n m) / MgAg (10 nm) / Ac (150 nm). In the above light-emitting element, Ac is 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexanitro-stranded triphenyl (11 into 1); Among the components, 15 MgAg and Ac have functions as intermediate connection layers.

CN

HAT moves the part of the component to the nitrogen-sealed handle box, and the mixture used in the build-up of the TPD+QD layer is spin-coated 56 200850054 (1500 rpm, 30 seconds) on the side where the Ac layer has been formed. On the surface to cover the Ac layer. The obtained substrate was moved again into a vacuum evaporation apparatus, and a light-emitting element having the following structure was produced by a well-known vacuum evaporation method. Component construction: glass substrate 5 (0.7 mm) / ITO (130 nm) / TPD + QD (20 nm) / TAZ (10 nm) / Alq3 (30 n m) / Mg Ag (10 nm) / Ac (15 0 nm) / TPD + QD ( 20 nm) / TAZ (10 nm) / Al q3 (30 nm) / LiF (lnm) / Al (150 nm). A voltage was applied to the light-emitting element, and its characteristics were evaluated. Fig. 7 is a graph showing the voltage-luminance characteristics of the light-emitting element of Example 2. 10 The light-emitting elements obtained by driving the rectangular light having a voltage amplitude of 0 to 44 V and a frequency of ιοοΗζ were measured for luminance and chromaticity change in a rectangular wave operating ratio of 〇1 to 1%. The brightness dependence of the chromaticity of the illuminating element is shown in Fig. 8. The light-emitting element of Example 2, which was driven by pulse width modulation, changed to a colorless change with respect to luminance, and had a luminance of more than 1 〇〇 nit, resulting in a good driving result. Industrial Applicability The light-emitting element of the present invention is suitable for use in a flat panel display such as 7^. Moreover, it is also applicable to a light source such as a backlight of a planar illuminant or a display, a display unit, a light source, etc. of a mobile phone, a PDA, a sanitary system, a dashboard of a vehicle, and the like. ° The contents of the documents described in this manual are fully quoted here. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a Jth embodiment of a light-emitting device of the present invention. Fig. 2 is a plan view showing a schematic view of a second embodiment of the light-emitting device of the present invention. Fig. 3 is a view showing a table of voltage-luminance characteristics of the light-emitting element manufactured in Example 1. Fig. 4 is a view showing a table of voltage dependence of an emission spectrum of a light-emitting element manufactured in Example 1. Fig. 5 is a graph showing the luminance correlation of the chromaticity after the light-emitting element manufactured in Example 1 is driven by the pulse width modulation. Fig. 6 is a graph showing the luminance dependence of the chromaticity of the light-emitting element manufactured in Example 1 after being driven by a voltage gradient. Fig. 7 is a view showing a table of voltage-luminance characteristics of the light-emitting elements manufactured in Example 2. Fig. 8 is a graph showing the luminance correlation of the chromaticity after the light-emitting element manufactured in Example 2 is driven by the pulse width modulation. [Main component symbol description] 1, 2... Light-emitting element 10. "Anode 20... Hole transport layer 30... Light-emitting layer 40... Electron transport layer 50... Electron injection layer 60. · Cathode 70... Pulse width modulation control Device 80... intermediate connection layer 90, 92···light emitting unit 58

Claims (1)

200850054 X. Patent application scope: A kind of M7L piece, comprising an anode, a light-emitting layer and a cathode layer which are sequentially laminated, and the light-emitting layer contains nano crystal light-emitting particles, and the light-emitting 7L piece is driven by a pulse width modulation driver. . 5 2. The illuminating device of item i of the patent scope, wherein a hole transport layer is contained between the anode and the luminescent layer. 3. For example, the light-emitting element of the above-mentioned item, wherein the electron-emitting layer is contained between the light-emitting layer and the cathode. The invention of claim i, wherein the anode and the light-emitting layer comprise a hole transport layer, and an electron transport layer is contained between the light-emitting layer and the cathode. 5. The zoning optical element includes an anode and a cathode, and at least two luminescent layers formed of luminescent particles containing nanocrystals are included between the anode and the cathode, and at least one of the luminescent layers is provided between the anode and the cathode. The middle 15 is connected to the layer, and the aforementioned light-emitting element is driven by the pulse width modulation. The light-emitting element according to any one of the above-mentioned items, wherein the thickness of the light-emitting layer is 1 to 1 nm. The light-emitting element according to any one of claims 1 to 5, wherein the nanocrystalline crystal light-emitting fine particles are semiconductor nanocrystals. The light-emitting element of claim 7, wherein the semiconductor nanocrystal is a core-shell type semiconductor nanocrystal. 59