200849441 九、發明說明： 【發明所屬之技術領域】 本發明係關於對半導體晶圓等之被處理體施行熱處理用 之被處理體之熱處理裝置、被處理體之熱處理方法及記憶 電腦可讀取程式之記憶媒體。 Ο Ο 本專利申請案係主張2007年2月27日申請之日本專利申 口月木2007_048125及2008年2月* *曰申請之曰本專利申請 案2008-* **氺**之優先權，該等先前申請案中之全 部揭不内容以引用的方式視為本說明書的一部分。 【先前技術】 般在形成IC等半導體積體電路之際，需對矽基板等 構成之半導體晶圓重複施行成膜處理、蝕刻處理、氧化擴 散處理、退火處理等各種處理。纟中，在對半導體施行成 膜處理所代表之熱處理之際，對晶圓之溫度管理成為重要 之要素之一。即，為了高度維持形成於晶圓表面之薄膜之 成膜速度、此膜厚之面間均—性及㈣均_性，要求以高 的精度管理晶圓之溫度。 例如，作為熱處理裝置’以一次可對複數片晶圓施行處 理之縱型熱處理裝置為例加以說明。首先，將多段地被支 持=導體晶圓裝載（搬人）縱型處理容器内，藉設於此處 理容器之外周之加熱機構加熱晶圓使其升溫。其後，使溫 度穩定化而使成職體流通，藉以施行成膜。域形，: 熱處理容器内及處理容器之外側設有熱電偶，依據得自此 熱電偶之溫度控制上述加熱機構之電力’藉以將晶圓維持 於特定温度（例如專利文獻1、2)。 127297.doc 200849441 又’處理今杰具有例如可收容50〜150片程度之晶圓之程 度之充为長度。因此，施行處理容器内之溫度控制之際， 為了施行U、、、田之精度較高之溫度控制，通常將處理容器内 在上下方向分割成複數加熱區，在各加熱區個別地施行溫 度控制。此饧形，預先在實驗用之假晶圓本身設置熱電 偶’預S «貫驗中調查利用此熱電偶之假晶圓之實際溫度 與设於處理容器内外之熱電偶之相關關係。而，在對製品 晶圓之熱處理時，-面參照上述相關關係，—面施行溫度 控制。 [專利文獻1]日本特開平10_25577號公報 [專利文獻2]日本特開2〇〇〇_77346號公報 【發明内容】 而，在如上述之熱處理裝置之溫度控制方法中，溫度測 定對象物之晶圓與熱電偶並未直接接觸。因此，製品晶圓 之貫際溫度與熱電偶之測定値之相關關係並非一直保持一 定。尤其，重複施行成膜處理導致在處理容器之内壁面等 附著不必要之附著物，或變更氣體流量及製程壓力等，甚 至於發生電壓變動等時，就會過大地偏離上述之相關關係 而有發生不能適正地控制晶圓溫度之虞。 又在晶圓溫度升降之間，也有希望施行晶圓之溫度控 T之要求。但，在此種情形使用上述之熱電偶時，實際之 日日圓/皿度與熱電偶之測定值之差會進一步增大，故難以適 應此種要求。為解決此問題點，也有人考慮在晶圓本身設 置熱電偶。但，因熱電偶有線，不能追隨晶圓之旋轉、移 載且有熱電偶引起之金屬污染等問題，故不能採用。 127297.doc 200849441 又，在逐片式之處理裝置方面，如日本特開2〇〇4_ 140167號公報所揭示’也有人考慮利用水晶振子接收對應 於溫度之電磁波而求出晶圓溫度。但，水晶之耐熱性頂^ 為〇 c知度，不施使用此溫度以上之熱處理裝置。 本發明係考慮此種問題點而完成者，其目的在於提供依 據例如由蘭克賽（La3Ga5Si〇14)基板元件或ltga(鋼纽酸録 鋁）等構成之彈性波元件所發射之電波而求出溫度，藉此 可無線且即時高精度地正確檢測被處理體之溫度而不會發 生金屬污染等’並可施行高精度之溫度控制之被處理體之 熱處理裝置、被處理體之熱處理方法及記憶電腦可讀取程 式之記憶媒體。 [解決問題之技術手段] 本發明人等針對半導體晶圓之溫度測定做過銳意研究， 其結果，獲得以下之創見，終於完成本發明：#，使用蘭 克賽或LTGA(鑭鈕酸鎵鋁）等之彈性波元件係依據電氣的 刺激產生之彈性波之音波產生發射信號而產生電波，藉由 接收此電波，可無線地直接測定晶圓溫度。 本發明之被處理體之熱處理裝置之特徵在於包含：處理 容器，其係可收容含有具㈣性波元件之溫測用被處理體 之複數被處理體；加熱機構，其設於前述處理容器外周， 加熱前述複數被處理體；保持機構，其保持前述複數被處 理體，並向前述處理容器内裝載及卸載前述複數被處理 體；發射用天線’其設於前述處理容器，向前述溫測用被 處理體之前述彈性波元件發射測定用電波；接收用天線， 其設於前述處理容器，接收由前述温測用被處理體之前述 127297.doc 200849441 彈性波兀件所發射、且包括對應於前述溫測用被處理體溫 度之頻率的電波；溫度分析部，其係連接於前述接收用天 線’依據由前述接收用天線所接收之電波，求出前述溫測 用被處理體之溫度；及溫度控制部，其係連接於前述溫度 分析部，依據前述溫度分析部之輸出控制前述加熱機構。[Technical Field] The present invention relates to a heat treatment apparatus for processing a workpiece to be processed for a semiconductor wafer or the like, a heat treatment method of the object to be processed, and a memory computer readable program. Memory media. Ο Ο This patent application claims the priority of the Japanese patent application Shoukou Yuemu 2007_048125 and the February 2008* *曰 application for this patent application 2008-* **氺** on February 27, 2007. The entire contents of these prior applications are hereby incorporated by reference in their entirety in their entireties. [Prior Art] When forming a semiconductor integrated circuit such as an IC, it is necessary to repeatedly perform various processes such as a film formation process, an etching process, an oxidative diffusion process, and an annealing process on a semiconductor wafer formed of a germanium substrate or the like. In the middle of the heat treatment of the semiconductor, the temperature management of the wafer is one of the important factors. That is, in order to highly maintain the film formation speed of the film formed on the surface of the wafer, the inter-surface uniformity and the (4) uniformity of the film thickness, it is required to manage the temperature of the wafer with high precision. For example, a vertical heat treatment apparatus that can treat a plurality of wafers at a time as a heat treatment apparatus will be described as an example. First, a plurality of stages are supported = a conductor wafer is loaded (moved) in a vertical processing container, and a heating mechanism is provided outside the container to heat the wafer to raise the temperature. Thereafter, the temperature is stabilized to allow the employee to circulate, thereby performing film formation. The domain shape is: a thermocouple is provided in the heat treatment container and on the outer side of the processing container, and the electric power of the heating mechanism is controlled in accordance with the temperature of the thermocouple to maintain the wafer at a specific temperature (for example, Patent Documents 1 and 2). 127297.doc 200849441 In addition, the processing of Jinjie has a length of, for example, a wafer that can accommodate 50 to 150 wafers. Therefore, in order to carry out the temperature control in the processing container, in order to perform the temperature control with high precision of U, and the field, the processing container is usually divided into a plurality of heating zones in the vertical direction, and temperature control is individually performed in each heating zone. In this shape, a thermocouple was placed in advance on the dummy wafer of the experiment. The pre-S test was used to investigate the correlation between the actual temperature of the dummy wafer using the thermocouple and the thermocouple provided inside and outside the processing container. However, in the heat treatment of the product wafer, the surface is subjected to temperature control by referring to the above correlation. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. Hei. The wafer is not in direct contact with the thermocouple. Therefore, the correlation between the internal temperature of the product wafer and the measurement of the thermocouple is not always maintained. In particular, repeated application of the film forming process causes unnecessary deposits to adhere to the inner wall surface of the processing container, or changes in gas flow rate, process pressure, etc., and even when voltage fluctuations occur, excessively deviate from the above correlation relationship. There is a problem that the wafer temperature cannot be properly controlled. In addition, between the rise and fall of the wafer temperature, there is also a desire to implement the temperature control of the wafer. However, in the case where the above-described thermocouple is used in this case, the difference between the actual day/circle and the measured value of the thermocouple is further increased, so that it is difficult to adapt to such a requirement. To solve this problem, some people consider setting a thermocouple on the wafer itself. However, because the thermocouple is wired, it cannot follow the rotation and migration of the wafer and the metal contamination caused by the thermocouple, so it cannot be used. 127297.doc 200849441 Further, in the case of the one-chip processing apparatus, as disclosed in Japanese Laid-Open Patent Publication No. Hei. No. Hei. However, the heat resistance top of the crystal is 〇 c, and the heat treatment device above this temperature is not used. The present invention has been made in view of such a problem, and an object thereof is to provide a radio wave emitted from an elastic wave element such as a Lancai (La3Ga5Si〇14) substrate element or ltga (aluminum silicate). By the temperature, the heat treatment device of the object to be processed, the heat treatment method of the object to be processed, and the heat treatment device for the object to be processed, which can accurately detect the temperature of the object to be processed without being caused by metal contamination or the like, and which can perform high-precision temperature control The memory computer can read the program's memory media. [Technical means for solving the problem] The present inventors have made intensive studies on the temperature measurement of a semiconductor wafer, and as a result, obtained the following findings, and finally completed the present invention: #, using Ranke or LTGA (gallium gallate) The elastic wave element generates a radio wave based on the acoustic wave generated by the electrical stimulation, and generates a radio wave. By receiving the radio wave, the wafer temperature can be directly measured wirelessly. The heat treatment apparatus of the object to be processed according to the present invention is characterized by comprising: a processing container for accommodating a plurality of objects to be processed containing a body for temperature measurement having a (four) wave element; and a heating mechanism provided on the outer periphery of the processing container And heating the plurality of objects to be processed; holding means for holding the plurality of objects to be processed, and loading and unloading the plurality of objects to be processed into the processing container; and the transmitting antenna' is disposed in the processing container for the temperature measurement The acoustic wave device of the object to be processed emits a radio wave for measurement; the receiving antenna is provided in the processing container, and is received by the 127297.doc 200849441 elastic wave device of the object for temperature measurement, and includes a temperature wave of the temperature of the temperature of the object to be processed; and a temperature analysis unit connected to the receiving antenna ′ to determine the temperature of the object to be tested according to the radio wave received by the receiving antenna; The temperature control unit is connected to the temperature analysis unit, and controls the heating unit based on an output of the temperature analysis unit.
1/ 如此，依據本發明，在處理容器設置發射用天線及接收 用天線，接收例如由蘭克賽基板元件或LTGA等構成之彈 ^波凡件發射之電波，依此求出被處理體之溫度。藉此， 可…、線且即日守鬲精度地正確檢測被處理體之溫度而不會發 生金屬污染等，故可施行高精度之溫度控制。X，在被處 理體之溫度升降之間，也可直接敎此溫度，故可正確控 制例如升溫速度及降溫速度’藉此，可適正地施行升降溫 ，制3夕卜，可無線地求出被處理體之溫度，古文即使膜附 者於處理容哭夕肉β冬-Τ- , _ 口口 土面’也可求出正確之被處理體之溫 :情形，例如前述發射用天線及前述接收用天線係以包 圍=被處理體周圍之方式形成環狀。又，例如在前述處 里谷二内。又有複數加熱區，前述溫測用被處理體係以對應 述加熱區而配置之方式設有複數個，前述發射用天 2前述接收用天線係以對應於各前述加熱區而配置之方 ^ 、"數個又，例如前述溫測用被處理體之彈性波元 件之頻帶係設定成在各前述加熱區互異。 二例如前述溫測用被處理體包含複數彈性波元件，前 淨性波70件之頻帶係設定成互異。X，例如前述彈 127297.doc 200849441 又皮7L件至少没於各溫測用被處理體之中心部與周邊部。 ^ 月〕述^射用天線及前述接收用天線係沿著前述處 理容器之長度方向形成為桿狀。 、 例如則述發射用天線及前述接收用天線係沿著前述 被^理體之周方向隔開特定間隔而設有複數個。又，例如 7、，返免理4裔内设有複數加熱區，前述溫測用被處理體 係以對應於各前述加熱區而配置之方式設有複數個，前述 溫測用被處理體之彈性波元件之頻帶係設定成在各前述加 熱區互異。 二又，例如前述溫測用被處理體係包含複數彈性波元件， ，述複數彈性波元件之頻帶係較成互異。又，例如前述 彈性波7L件至少設於各溫測用被處理體之中心部與周邊 β。又，例如前述發射用天線及前述接收用天線係設於前 述處理容器之内側。 又，例如前述發射用天線及前述接收用天線係設於前述 處理容器之外側。又，例如在前述處理容器之外方，設有 由别述處理容器卸載之前述保持機構待機之裝載區域；在 别述裝載區域，分別設有具有與前述發射用天線及前述接 收用天線同一構造之追加發射用天線及追加接收用天線。 又例如别述發射用天線及前述接收用天線係分別被收容 於保護管内。 又，例如由前述發射用天線每隔特定時間依序掃描並發 射對應於前述頻帶相異之彈性波元件的互異頻帶之測定用 電波。又，例如由前述發射用天線同時發射對應於前述頻 127297.doc 200849441 帶相異之彈性波元件的互異頻帶之測定用電波。 又，例如前述發射用天線及前述接收用天線被一體化為 收發用天線。X，例如在前述處理容器内及/或前述加熱 機構設有溫度測定用熱電冑，前述溫度㈣部亦參_自' 前述熱電偶之測定值而施行前述加熱機構之控制。又，例 如在前述處理容器設有為輔助前述被處理體之熱處理而藉 高頻電力產生《之《產生機構，前述測定用電波之^ 帶係設定成異於前述高頻電力之頻帶。又，例如前述彈性 波元件包括表面彈性波元件。又，例如前述彈性波元件包 括體彈性波7G件。X，例如前述彈性波元件包括選自由鋼 钽酸鎵鋁（LGTA)、水晶（Si〇2)、氧化辞（Zn〇)、羅謝爾鹽 (酒石酸鉀鈉：ΚΝΑ^Ο6)、鈦酸锆酸鉛 (PZT:Pb(Zr，Ti)03)、鈮酸鋰（LiNb〇3)、鈕酸鋰（UTa〇3)、 四硼酸鋰（Li2B407)、蘭克賽（La3Ga5Si〇i4)、氮化鋁、電氣 石（T〇urmaline)、聚偏二氟乙烯（pVDF)所組成之群中之i種 材料之基板元件。 本發明之被處理體之熱處理方法係將保持包含具有彈性 波元件之溫測用被處理體之複數被處理體的保持機構導入 没有發射用天線及接收用天線之處理容器内，以設於前述 處理容器外周之加熱機構加熱前述被處理體，藉此施行熱 處理’其特徵在於包含：發射步驟，其係由前述發射用天 線向前述溫測用被處理體之前述彈性波元件發射測定用電 波；接收步驟，其係以前述接收用天線接收由接收到前述 測定用電波之前述溫測用被處理體之前述彈性波元件所發 127297.doc 11 200849441 射的電波’·溫度分析步驟，其係依據由前述接㈣天線所 接收之電波，求出前述溫測用被處理體之溫度；及溫度控 制步驟’其係依據前述溫度分析步驟中所求得之溫度控制 前述加熱機構。 此情形，例如在前述處理容器内設有複數加熱區，前述 溫測用被處理體係對應於各前述加熱區而設有複數個，前 述溫測用被處理體之彈性波元件之頻帶係設定成在各前述 加熱區互異。又，例如在前述處理容器内及/或前述加熱 機構設有溫度測定用熱電偶；在前述溫度控制步驟中，亦 參照來自前述熱電偶之測定值而施行前述加熱機構之控 制。又，例如預先準備預備之溫測用被處理體，依需要或 定期地自動交換前述溫測用被處理體與前述預備之溫測用 被處理體。又，例如利用藉高頻電力產生之電漿辅助前述 被處理體之熱處理，前述測定用電波之頻率係設定成異於 鈾述咼頻電力之頻率。又，例如前述彈性波元件包括表面 彈性波元件或體彈性波元件。 本發明關於記憶電腦可讀取程式之記憶媒體，該程式係 用以使電腦執行被處理體之熱處理方法者，其特徵在於： 前述被處理體之熱處理方法係將保持包含具有彈性波元件 之溫測用被處理體之複數被處理體的保持機構導入設有發 射用天線及接收用天線之處理容器内，以設於前述處理容 器外周之加熱機構加熱前述被處理體，藉此施行熱處理 者’且包含：發射步驟，其係由前述發射用天線向前述溫 測用被處理體之前述彈性波元件發射測定用電波；接收步 127297.doc -12- 200849441 驟，其係以前述接收用天線接收由接收到前述測定用電波 之前述溫測用被處理體之前述彈性波元件所發射的電波； μ度分析步驟，其係依據由前述接收用天線所接收之電 波，求出前述溫測用被處理體之溫度；及溫度控制步驟， 其係依據前述溫度分析步驟中所求得之溫度控制前述加執 機構。 … 依據本發明，如下所述可發揮優異之作用效果。即，在In this way, according to the present invention, the transmitting antenna and the receiving antenna are provided in the processing container, and the radio wave emitted by the elastic wave member such as the Lankey substrate element or the LTGA is received, and the object to be processed is obtained accordingly. temperature. Thereby, the temperature of the object to be processed can be accurately detected without being able to accurately detect the temperature of the object to be processed, and the metal can be subjected to high-precision temperature control. X, when the temperature of the object to be processed is raised and lowered, the temperature can be directly increased. Therefore, for example, the temperature increase rate and the temperature drop rate can be correctly controlled. Thus, the temperature can be appropriately and appropriately raised and lowered, and the system can be obtained wirelessly. The temperature of the object to be treated, the ancient text, even if the film is attached to the treatment of the crying and evening meat, β winter-Τ-, _ mouth surface, can also find the temperature of the correct object to be treated: for example, the aforementioned transmitting antenna and the aforementioned The receiving antenna is formed in a ring shape so as to surround the periphery of the object to be processed. Also, for example, in the aforementioned valley. Further, the plurality of heating zones are provided, and the plurality of processing systems for temperature measurement are arranged in a plurality of places corresponding to the heating zone, and the receiving antennas of the transmitting day 2 are arranged corresponding to the respective heating zones. In addition, for example, the frequency bands of the elastic wave elements of the object for temperature measurement are set to be different from each other in the respective heating zones. For example, the temperature-measuring object to be processed includes a plurality of elastic wave elements, and the band of the fore-cleanness wave 70 is set to be different from each other. X, for example, the aforementioned bullet 127297.doc 200849441 The skin 7L is at least not in the center portion and the peripheral portion of each of the temperature-measuring objects. ^月〕 The antenna for radiation and the antenna for reception are formed in a rod shape along the longitudinal direction of the processing container. For example, the transmitting antenna and the receiving antenna are provided in plural numbers at predetermined intervals along the circumferential direction of the workpiece. Further, for example, in the seventh, the plurality of heating zones are provided in the genus, and the temperature-measuring system to be processed is provided in a plurality of ways corresponding to the respective heating zones, and the elasticity of the object to be measured is The frequency band of the wave element is set to be different from each of the aforementioned heating zones. Second, for example, the temperature measurement processing system includes a plurality of elastic wave elements, and the frequency bands of the plurality of elastic wave elements are different from each other. Further, for example, the elastic wave 7L is provided at least at the center portion and the periphery β of each of the temperature-measuring objects. Further, for example, the transmitting antenna and the receiving antenna are provided inside the processing container. Further, for example, the transmitting antenna and the receiving antenna are provided on the outer side of the processing container. Further, for example, in addition to the processing container, a loading area in which the holding mechanism that is unloaded by the processing container is not in standby is provided, and the loading area is provided with the same structure as the transmitting antenna and the receiving antenna. The transmitting antenna and the additional receiving antenna are added. Further, for example, the transmitting antenna and the receiving antenna are respectively housed in the protective tube. Further, for example, the transmitting antenna sequentially scans and emits radio waves for measurement in mutually different frequency bands corresponding to the elastic wave elements having different frequency bands. Further, for example, the transmitting antennas simultaneously transmit radio waves for measurement in accordance with the different frequency bands of the different acoustic wave elements of the aforementioned frequency 127297.doc 200849441. Further, for example, the transmitting antenna and the receiving antenna are integrated into a transmitting/receiving antenna. X, for example, a thermoelectric heater for temperature measurement is provided in the processing container and/or the heating means, and the temperature (four) portion is controlled by the heating means from the measured value of the thermocouple. Further, for example, in the processing container, a generating means for generating a radio wave generated by the high-frequency power to assist the heat treatment of the object to be processed is provided, and the band of the measuring radio wave is set to be different from the frequency band of the high-frequency power. Further, for example, the aforementioned elastic wave element includes a surface acoustic wave element. Further, for example, the elastic wave element described above includes a body elastic wave 7G member. X, for example, the aforementioned elastic wave element comprises a material selected from the group consisting of gallium aluminum ruthenate (LGTA), crystal (Si〇2), oxidized (Zn〇), Rochelle salt (sodium potassium tartrate: ΚΝΑ^Ο6), zirconium titanate Lead acid (PZT: Pb(Zr, Ti)03), lithium niobate (LiNb〇3), lithium nitrite (UTa〇3), lithium tetraborate (Li2B407), Lancôme (La3Ga5Si〇i4), nitriding A substrate component of one of a group of aluminum, tourmaline, and polyvinylidene fluoride (pVDF). In the heat treatment method of the object to be processed according to the present invention, a holding mechanism that holds a plurality of objects to be processed including a temperature-measuring object having an elastic wave element is introduced into a processing container having no transmitting antenna and receiving antenna, and is provided in the above-mentioned The heating means for heating the outer periphery of the processing chamber heats the object to be processed, and the heat treatment is performed, characterized by comprising: an emitting step of transmitting a radio wave for measurement to the elastic wave element of the object for temperature measurement by the transmitting antenna; a receiving step of receiving, by the receiving antenna, a radio wave '·temperature analysis step 127297.doc 11 200849441 emitted by the elastic wave element of the object for temperature measurement receiving the measurement radio wave, based on The temperature of the object to be measured for temperature measurement is obtained from the radio wave received by the antenna (4); and the temperature control step 'controls the heating means based on the temperature determined in the temperature analysis step. In this case, for example, a plurality of heating zones are provided in the processing container, and the temperature-measuring system to be processed is provided in plurality corresponding to each of the heating zones, and the band of the elastic wave component of the temperature-measuring object to be processed is set to The aforementioned heating zones are different from each other. Further, for example, a thermocouple for temperature measurement is provided in the processing container and/or the heating means, and in the temperature control step, the control of the heating means is performed with reference to the measured value from the thermocouple. In addition, for example, the prepared object for temperature measurement is prepared in advance, and the temperature-measuring object to be processed and the preliminary temperature-measuring object to be processed are automatically exchanged as needed or periodically. Further, for example, the heat treatment by the high-frequency power is used to assist the heat treatment of the object to be processed, and the frequency of the measurement radio wave is set to be different from the frequency of the uranium-frequency power. Further, for example, the aforementioned elastic wave element includes a surface acoustic wave element or a bulk acoustic wave element. The present invention relates to a memory computer readable program memory medium for causing a computer to perform a heat treatment method of a processed object, characterized in that: the heat treatment method of the object to be processed is to maintain a temperature including an elastic wave element The holding mechanism of the plurality of objects to be processed of the object to be processed is introduced into a processing container provided with the transmitting antenna and the receiving antenna, and the heating means provided on the outer periphery of the processing container heats the object to be processed, thereby performing heat treatment. And comprising: a transmitting step of transmitting, by the transmitting antenna, the measuring wave to the elastic wave element of the object for temperature measurement; receiving step 127297.doc -12-200849441, which is received by the receiving antenna a radio wave emitted from the elastic wave element of the temperature measurement target body that receives the measurement radio wave; and a μ degree analysis step of determining the temperature measurement target based on a radio wave received by the reception antenna a temperature of the treatment body; and a temperature control step of controlling the addition according to the temperature determined in the temperature analysis step Executive agency. According to the present invention, excellent effects can be exhibited as described below. That is, at
處理容器設置發射用天線及接收用天線，接收例如由蘭克 賽基板7G件或LTGA等構成之彈性波元件發射之電波，依 此求出被處理體之溫纟。藉此，彳無線且即時高精度地正 確祆測被處理體之溫度而不會發生金屬污染等，故可施行 鬲精度之溫度控制。又，在被處理體之溫度升降之間，也 可直接測定此溫度，故可正確例如控制升溫速度及降溫速 度，藉此，可適正地施行升降溫控制。另外，即使膜附著 於處理容H之内壁面，也可求出正確之被處理體之溫度。 【實施方式】 一以下，詳述有關本發明之一實施型態之附圖。圖！係表 示本’x月之熱處理裝置之剖面構成圖，圖2 A、圖π係表 不處理容器與環狀之收發天線之關係位置之圖。圖3A、圖 3B、圖3C係表示設有彈性波元件之溫測用被處理體之 圖’圖4係表示熱處理裝置之溫度控制系之系統圖，圖％ 表不本發明之熱處理方法之_例之流程圖，圖Μ、圖沾 係說明彈性波元件之動作原理之動作原理圖。 在此’係以使料發射用天線及接收用天線-體化而兼 127297.doc -13· 200849441 用之收發天線之情形為例加以說明。又，在此，係以縱型 熱處理裝置為例加以說明。 如圖1所示，熱處理裝置2具有雙重管構造之處理容器 8。此處理容器8包含筒體狀之石英製之内筒4、及在内筒4 • 之外側配置成同心圓狀之有頂板之筒體狀之石英製之外筒 6。在此處理容器8之外周，配置具有加熱器等構成之加熱 機構10與隔熱材料12之加熱爐14。加熱機構1〇係用於加熱 f, 後述之複數被處理體（半導體晶圓W)，在隔熱材料12内側 面王面地被设置。處理容器8之加熱區域係在高度方向劃 分複數個，在此劃分成5個加熱區16a、i6b、i6c、i6d、 16e作為溫度控制用。各加熱機構1〇係由對應於或不對應 於此各加熱區16a〜16e之5個加熱器i〇a、i〇b、i〇c、10d、 l〇e所構成，可分別個別地加以控制。又，此加熱區數並 無特別限疋。又，在此各加熱器1 〇a〜1 〇e，分別設有測定 此溫度用之加熱器用熱電偶17a〜I7e。 I 處理谷态8之下端例如被不銹鋼製之筒體狀之歧管1 8所 支持。又，内筒4之下端部被支持於安裝在歧管18之内壁 之支持環20上。又，也可利用石英等形成此歧管1 8，將此 與處理容器8—體地成型。又，在此歧管18之下方，設有 載置而保持複數片半導體晶圓W(被處理體）之石英製之晶 舟2 2 (保持機構）。此晶舟2 2 (保持機構）可升降，以便將半 導體晶圓W(被處理體）裝載及卸載至處理容器§内。半導體 晶圓W例如使用其直徑為300 mm尺寸之半導體晶圓w ,但 此尺寸並無特別限定。 127297.doc -14- 200849441 晶舟22係介著石英製之保溫筒24被載置於轉盤26上。轉 盤26係被支持於貫通開閉歧管18之下端開口部之蓋部“之 旋轉軸30上。而，在此旋轉轴30之貫通部，例如介設有磁 性流體封32，磁性流體封32係一面將此旋轉軸3〇氣密地密 封，一面將其可旋轉地支持。又，在蓋部28之周邊部與歧 管18之下端部，例如介設有〇形環等構成之密封構件34， 以保持處理容器8之密封性。 上述之旋轉軸30例如係安裝於晶舟昇降機等升降機構％ 所支持之臂38之末端，構成可使晶舟22及蓋部28等一體地 升降。 另一方面，在歧管18之側部，設有氣體導入機構4〇。具 體上，此氣體導入機構40具有貫通歧管18之氣體喷嘴42， 可一面控制必要之氣體之流量，一面將其供應至處理容器 8内。在此，氣體喷嘴42雖僅記載1條作為代表，但實際上 可依A?、使用之氣體種類設置複數條。又，作為氣體喷嘴 42，也可使用向處理容器8内之上方延伸，並具有複數氣 體喷射孔之所謂分散喷嘴。又，在此歧管18之側壁，設有 由内筒4與外筒6之間排出處理容器8内之環境氣體之排氣 口 44。在此排氣口 44例如連接介設有真空泵及壓力調整閥 等之真空排氣系（未圖示）。 又，在内筒4與晶舟22之間，對應於各加熱器1〇a〜1〇e， 。又有5個内部熱電偶46a〜46e。各内部熱電偶〜46e呈現 被收容於1個石英製之保護管48内之狀態。而，此保護管 48之下端屈曲而氣密地貫通歧管18側部。各熱電偶 127297.doc -15· 200849441 17a〜17e、46a〜46e之檢測值例如被輸入至微電腦等構成之 溫度控制部5 0。此檢測值如後所述，在製程時在個別地控 制對各加熱器10a〜10e之供應電力之際可供輔助之用。 而’在此處理谷^§ 8 ’设有作為本發明之特徵之收發用 天線52。又，如上所述，收發用天線52係將發射用天線與 接收用天線一體化而兼用，但不限於此，也可將此收發用 天線52分離而設置發射用天線與接收用天線。 具體上，收發用夭線52如圖2A所示，在處理容器8之外 側，以包圍此周圍方式形成環狀而設置。收發用天線52係 對應於後述之各溫測用晶圓5 8 a〜5 8 e，而由5個收發用天線 52a、52b、52c、52d、52已所構成。即，各收發用天線 52a〜52e係被設置成包圍晶圓w之周圍。各收發用天線 52a〜52e如圖2B所示，係在保護管54内插通由導線構成之 天線56所形成。此保護管54例如對電波具有穿透性，且由 具有耐熱性及耐腐姓性之材料，例如石英及氧化鋁等陶究 材料等所構成。作為天線56，可使用鉑等。 而，如圖1所示，在晶舟22上，除了作為製品晶圓之半 導體晶圓W以外，並保持著假晶圓及作為本發明之特徵之 具有彈性波元件之温測用被處理體之溫測用晶圓。在此， 作為彈性波元件也可使用表面彈性波元件與體彈性波元件 中任一方之彈性波元件。具體上，在此，對應於各加熱器 l〇a〜10e，保持著5個溫測用晶圓58a、58b、58c、58d、 58e。此各溫測用晶圓58a〜58e係被保持於可控制各加熱器 10a〜10e之最適之位置，分別接近於所對應之各收發用天 127297.doc -16- 200849441 線52a〜52e而被設定成即使是微弱之電波也容易到達。 而，各溫測用晶圓58a〜58e係分別具有彈性波元件6〇a、 60b、60c、60d、60e(參照圖3A、圖3B、圖3C)。由收發用 天線52a〜52e對此各彈性波元件60a〜60e發射電波。又，收 發用天線52a〜52e可接收由此各彈性波元件60a〜60e產生之 電波。 又，如圖3A、圖3B所示，彈性波元件60a〜60e也可設置 於各溫測用晶圓58a〜58e之上面’但不限定於此，如圖3C 所示，彈性波元件60a〜60e也可埋入於各溫測用晶圓 5 8 a〜5 8 e内。此埋入之方法不受特別拘束，可將上述彈性 波元件60a〜60e夾入而埋入2片非常薄之晶圓構件間。或也 可在由溫測用晶圓58a〜58e之表面形成埋入孔，將彈性波 元件60a〜60e收容而埋入此中。 又’作為上述彈性波元件60a〜60e，例如作為表面彈性 波元件，可使用蘭克賽（LasGasSiOy之蘭克賽基板元件。 另一方面，作為體彈性波元件，可使用LTGA(鑭鈕酸鎵 铭；La3Ta〇.5Ga5.5-xAlx014)。此情形，從防止互相之干擾 上’最好：彈性波元件60a〜60e之頻帶係設定成在各加熱 區相異。 在此，亦參照圖4說明有關使用各收發用天線52a〜52e等 之溫度控制系。如圖4所示，各收發用天線52a〜52e經由線 62a〜62e電性連接於收發器64。各收發用天線52a〜52e可向 溫測用晶圓58a〜58e之彈性波元件6〇a〜6〇e發射測定用電 波，並可個別地接收來自分別對應之彈性波元件6〇a〜6〇e 127297.doc 200849441 之電波。又，各線623〜626例如既可被插通保護於石英勢 之保護管内，或也可將各線62a〜62e合併成丨條。又將^ 發用天線52a〜52e分別分離成發射用與接收用之情形，收 發器64也分離成發射器與接收器。 在此，將各彈性波元件6〇a〜6〇e調整成可對互異之頻帶 起反應之情形’可由上述收發器64之發射器發射對應於： 等之相異頻帶之測定用電波。此情形，既可同時發射此等 之相異頻帶之測定用電波，或也可在特定時間内，例如在 1秒鐘以内，依序掃描並發射上述頻帶相異之測定用電 波。 又，作為處理裝置，為輔助對晶圓评之熱處理，也可在 處理容器8設有藉高頻電力產生電漿之電漿產生機構15。 此情形，為防止雜訊之發生，將上述測定用電波之各頻帶 設定為異於上述高頻電力之頻率，例如設定為異於1356 MHz或400 kHz之頻率。 收叙為64連接於溫度分析部66，溫度分析部66連接於溫 度控制部50。溫度分析部66依據收發用天線52a〜52e所接 收之各電波，分別求出各溫測用晶圓58a〜58e之溫度，即 各加熱區之溫度。而，可依據有關此溫度分析部66所求得 之各加熱區之溫度之輸出，使溫度控制部5 〇可經由加熱器 驅動部68個別獨立地控制各加熱器10a〜10e。 又’各熱電偶17a〜17e、46a〜46e之溫度之測定值也被輸 入至溫度控制部50，可輔助上述加熱機構10之溫度控制。 又’也可省略此等内部熱電偶46a〜46e及/或加熱器用熱電 127297.doc -18- 200849441 偶17a〜17e 。 在此，回到圖1，如以上所形成之熱處理裝置2之全體之 動作例如係被電腦等之控制機構70所控制。控制機構70係 在溫度控制部50之支配下控制溫度控制部5〇。施行此熱處 ' 理裝置2之全體之動作之電腦之程式係被記憶於軟碟或 • CD(CompaCt Disc ··音碟）或硬碟或快閃記憶體等記憶媒體 72。具體上’係依據來自此控制機構7〇之指令，施行各氣 冑之供應之開始、停止或流量控制、製程溫度及製程壓力 ； 之控制等。 其次’也參照圖5說明有關使用如上所構成之熱處理裝 置所她行之熱處理方法。圖5係表示本發明之熱處理方法 之例之流私圖。百先，在施行實際之成膜等熱處理製程 之前，需預先求出由對應於各加熱區之彈性波元件 60a〜60e產生之頻率之電波所檢測之溫測用晶圓“a，。之 溫度、與供應至各加熱器1〇a〜1〇e之電力之相關關係，將 C &相關關係預先記憶於溫度控制部50。又，使用各熱電偶 17aM7e、46a〜46e之情形，也需預先求出此等溫度檢測值 與由彈性波元件6Ga〜6Ge之電波所得之溫度之相關關係。 ,、人-兒明有關對半導體晶圓w施行實際之成膜處理等 =熱處理之際之製程。首先，在半導體晶圓w之卸載之狀 悲下’在下方之裝載區域内，熱處理裝置2呈現待機狀態 時’處理容器8維持於製程溫度或比此更低之溫度。其 後’在將常溫之多數片晶圓W載置於晶舟22之狀態下，在 處理容器8内使晶舟22由其下方上升而予以袭載，以蓋部 127297.doc -19- 200849441 藉以將處理容器8内密閉。 28封閉歧管18之下端開口部 在曰曰舟22上除了作為製品晶圓w以外，並將溫測用 晶圓58a〜58e支持於對應於各加熱區—〜…之位置。 其次’將處理容器8内維持於特定之製程壓力，並由各 熱電偶17a〜17e、46a〜46崎別檢測晶圓溫度，由來自各彈 性波元件60a〜6如之電波檢測晶圓溫度。又，藉圖4所示之 溫度控制系之動作，增大對各加熱器1〇a〜i〇e之投入電力The processing container is provided with a transmitting antenna and a receiving antenna, and receives radio waves emitted from an elastic wave element such as a Ranko substrate 7G or an LTGA, and the temperature of the object to be processed is obtained. Thereby, the temperature of the object to be processed can be accurately measured wirelessly and accurately, without causing metal contamination or the like, so that temperature control of the 鬲 precision can be performed. Further, since the temperature can be directly measured between the temperature rise and fall of the object to be processed, the temperature increase rate and the temperature decrease rate can be accurately controlled, for example, whereby the temperature rise and fall control can be appropriately performed. Further, even if the film adheres to the inner wall surface of the treatment volume H, the temperature of the object to be processed can be determined. [Embodiment] One of the following is a detailed description of an embodiment of the present invention. Figure! The cross-sectional structural diagram of the heat treatment apparatus of the present invention is shown in Fig. 2, and Fig. 2A and Fig. π are diagrams showing the relationship between the container and the ring-shaped transmitting/receiving antenna. 3A, 3B, and 3C are views showing a temperature-measuring object to be processed by providing an elastic wave element. FIG. 4 is a system diagram showing a temperature control system of the heat-treating device, and FIG. The flow chart of the example, the diagram and the diagram illustrate the action principle diagram of the action principle of the elastic wave element. Here, the case where the transmitting antenna and the receiving antenna are embodied and the transmitting/receiving antenna for 127297.doc -13·200849441 will be described as an example. Here, a vertical heat treatment apparatus will be described as an example. As shown in Fig. 1, the heat treatment apparatus 2 has a processing container 8 of a double tube configuration. The processing container 8 includes a cylindrical inner cylinder 4 made of a cylindrical body and a cylindrical outer cylinder 6 having a cylindrical shape having a top plate arranged concentrically on the outer side of the inner cylinder 4. On the outer circumference of the processing container 8, a heating furnace 14 having a heating mechanism 10 composed of a heater or the like and a heat insulating material 12 is disposed. The heating means 1 is for heating f, and a plurality of objects to be processed (semiconductor wafer W) to be described later are provided on the inner side of the heat insulating material 12 in a king face. The heating zone of the processing vessel 8 is divided into a plurality of sections in the height direction, and is divided into five heating zones 16a, i6b, i6c, i6d, and 16e for temperature control. Each heating mechanism 1 is composed of five heaters i〇a, i〇b, i〇c, 10d, l〇e corresponding to or not corresponding to the respective heating zones 16a to 16e, and can be individually and individually control. Moreover, the number of the heating zones is not particularly limited. Further, heaters 1a to 1b for measuring the temperature are provided in the heaters 1a, 1a, and 1e, respectively. The lower end of the I treatment valley state 8 is supported by, for example, a manifold made of stainless steel. Further, the lower end portion of the inner cylinder 4 is supported by the support ring 20 mounted on the inner wall of the manifold 18. Further, the manifold 18 may be formed of quartz or the like to be integrally molded with the processing container 8. Further, below the manifold 18, a quartz boat 2 2 (holding mechanism) on which a plurality of semiconductor wafers W (subjects to be processed) are placed is placed. The boat 2 2 (holding mechanism) can be raised and lowered to load and unload the semiconductor wafer W (processed object) into the processing container §. The semiconductor wafer W is, for example, a semiconductor wafer w having a diameter of 300 mm, but the size is not particularly limited. 127297.doc -14- 200849441 The crystal boat 22 is placed on the turntable 26 via a quartz insulating cylinder 24. The turntable 26 is supported on the rotating shaft 30 of the lid portion of the opening portion of the lower end of the opening and closing manifold 18. The magnetic fluid seal 32 and the magnetic fluid seal 32 are interposed in the through portion of the rotating shaft 30, for example. The rotating shaft 3 is hermetically sealed while being rotatably supported. Further, at the peripheral portion of the cover portion 28 and the lower end portion of the manifold 18, for example, a sealing member 34 formed by a beak ring or the like is interposed. In order to maintain the sealing property of the processing container 8. The above-described rotating shaft 30 is attached to the end of the arm 38 supported by the lifting mechanism % such as a boat elevator, and is configured to integrally raise and lower the boat 22, the lid portion 28, and the like. On the other hand, a gas introduction mechanism 4 is provided at a side portion of the manifold 18. Specifically, the gas introduction mechanism 40 has a gas nozzle 42 penetrating the manifold 18, and can supply a gas flow while controlling the flow rate of the necessary gas. Here, the gas nozzle 42 is only one representative, but actually, a plurality of gas types can be provided depending on A?, and the gas nozzle 42 can be used as the gas nozzle 42. Extending above and inside A so-called dispersion nozzle having a plurality of gas injection holes. Further, on the side wall of the manifold 18, an exhaust port 44 for discharging the ambient gas in the processing container 8 between the inner cylinder 4 and the outer cylinder 6 is provided. The port 44 is connected, for example, to a vacuum exhaust system (not shown) such as a vacuum pump or a pressure regulating valve. Further, between the inner tube 4 and the wafer boat 22, the heaters 1a to 1〇e are provided. There are also five internal thermocouples 46a to 46e. The internal thermocouples ~46e are in a state of being housed in a protective tube 48 made of quartz. However, the lower end of the protection tube 48 is flexed and hermetically penetrates the manifold. The detection value of each of the thermocouples 127297.doc -15·200849441 17a to 17e, 46a to 46e is input to, for example, a temperature control unit 50 constituted by a microcomputer or the like. This detection value is described later in the process. When the power supply to each of the heaters 10a to 10e is individually controlled, it is available for assistance. In this case, the processing antenna 52 is provided as a transmission/reception antenna 52 which is a feature of the present invention. The transmitting/receiving antenna 52 is used by integrating the transmitting antenna and the receiving antenna, but is not limited thereto. In this case, the transmitting and receiving antennas 52 may be separated to provide a transmitting antenna and a receiving antenna. Specifically, as shown in FIG. 2A, the transmitting and receiving twisting wires 52 form a ring shape on the outer side of the processing container 8 so as to surround the surrounding portion. Further, the transmitting/receiving antenna 52 is configured to correspond to each of the temperature measuring wafers 5 8 a to 5 8 e described later, and is composed of five transmitting/receiving antennas 52a, 52b, 52c, 52d, and 52. The antennas 52a to 52e are provided so as to surround the periphery of the wafer w. As shown in Fig. 2B, each of the transmitting and receiving antennas 52a to 52e is formed by inserting an antenna 56 composed of a wire in the protective tube 54. This protective tube 54 is formed. For example, it is penetrating to electric waves, and is composed of a material having heat resistance and corrosion resistance, such as ceramics such as quartz and alumina. As the antenna 56, platinum or the like can be used. As shown in FIG. 1, on the wafer boat 22, in addition to the semiconductor wafer W as a product wafer, a dummy wafer and a temperature-measuring object having an elastic wave element which is a feature of the present invention are held. Wafer for temperature measurement. Here, as the elastic wave element, any one of the surface acoustic wave element and the bulk acoustic wave element may be used. Specifically, in this case, five temperature measuring wafers 58a, 58b, 58c, 58d, and 58e are held corresponding to the respective heaters 10a to 10e. The temperature-measuring wafers 58a to 58e are held at the optimum positions at which the heaters 10a to 10e can be controlled, and are respectively close to the corresponding transmission and reception days 127297.doc -16 - 200849441 lines 52a to 52e. It is easy to reach even if it is a weak electric wave. Each of the temperature measuring wafers 58a to 58e has elastic wave elements 6a, 60b, 60c, 60d, and 60e (see FIGS. 3A, 3B, and 3C). Radio waves are transmitted to the respective elastic wave elements 60a to 60e by the transmitting/receiving antennas 52a to 52e. Further, the transmitting and receiving antennas 52a to 52e can receive the radio waves generated by the respective elastic wave elements 60a to 60e. Further, as shown in FIGS. 3A and 3B, the acoustic wave elements 60a to 60e may be provided on the upper surfaces of the temperature detecting wafers 58a to 58e. However, the present invention is not limited thereto, and as shown in FIG. 3C, the elastic wave elements 60a to 60e can also be embedded in the temperature measurement wafers 5 8 a~5 8 e. This method of embedding is not particularly limited, and the above-described elastic wave elements 60a to 60e can be sandwiched between two very thin wafer members. Alternatively, an embedding hole may be formed in the surface of the temperature detecting wafers 58a to 58e, and the elastic wave elements 60a to 60e may be housed and buried therein. Further, as the above-described elastic wave elements 60a to 60e, for example, as a surface acoustic wave element, a Lancaster (LasGasSiOy) substrate device can be used. On the other hand, as a bulk acoustic wave element, LTGA (gallium gallate) can be used. Ming; La3Ta〇.5Ga5.5-xAlx014) In this case, from the prevention of mutual interference, it is preferable that the band of the elastic wave elements 60a to 60e is set to be different in each heating zone. Referring also to FIG. 4 A temperature control system in which each of the transmitting and receiving antennas 52a to 52e and the like is used will be described. As shown in Fig. 4, each of the transmitting and receiving antennas 52a to 52e is electrically connected to the transceiver 64 via wires 62a to 62e. Each of the transmitting and receiving antennas 52a to 52e can be used. The measurement wave is emitted to the elastic wave elements 6a to 6〇e of the temperature measurement wafers 58a to 58e, and the waves from the corresponding elastic wave elements 6〇a to 6〇e 127297.doc 200849441 are individually received. Further, each of the lines 623 to 626 can be inserted into the protective tube of the quartz potential, for example, or the lines 62a to 62e can be combined into a purlin. The antennas 52a to 52e are separately separated into a transmitting and receiving unit. In this case, the transceiver 64 is also separated into transmissions. Here, the respective elastic wave elements 6〇a to 6〇e are adjusted to be responsive to mutually different frequency bands. The transmitter of the transceiver 64 can transmit a different frequency band corresponding to: Radio waves for measurement. In this case, the measurement radio waves of the different frequency bands may be simultaneously transmitted, or the measurement radio waves of the above-mentioned frequency bands may be sequentially scanned and transmitted within a certain time, for example, within 1 second. Further, as the processing means, in order to assist in the heat treatment of the wafer, the plasma processing means 15 for generating plasma by high-frequency power may be provided in the processing container 8. In this case, in order to prevent the occurrence of noise, the above The frequency band of the measurement radio wave is set to be different from the frequency of the high-frequency power, and is set, for example, to a frequency different from 1356 MHz or 400 kHz. The revelation is 64 connected to the temperature analysis unit 66, and the temperature analysis unit 66 is connected to the temperature control unit. The temperature analyzing unit 66 obtains the temperatures of the respective temperature measuring wafers 58a to 58e, that is, the temperatures of the respective heating zones, based on the respective radio waves received by the transmitting and receiving antennas 52a to 52e. 66 requests The temperature of each of the heating zones is output, so that the temperature control unit 5 can individually control the heaters 10a to 10e independently via the heater driving unit 68. Further, the temperature of each of the thermocouples 17a to 17e and 46a to 46e is measured. The value is also input to the temperature control unit 50, and the temperature control of the heating mechanism 10 can be assisted. Further, the internal thermocouples 46a to 46e and/or the heater thermoelectric 127297.doc -18- 200849441 may be omitted 17a to 17e. Here, referring back to Fig. 1, the entire operation of the heat treatment apparatus 2 formed as described above is controlled by, for example, a control unit 70 such as a computer. The control unit 70 controls the temperature control unit 5 under the control of the temperature control unit 50. The computer program that performs the operation of the heat device 2 is stored in a floppy disk or a CD (CompaCt Disc) or a memory medium such as a hard disk or a flash memory. Specifically, the control of the start, stop or flow control of each gas supply, the process temperature and the process pressure are performed in accordance with the instructions from the control unit 7〇. Next, a heat treatment method using the heat treatment apparatus constructed as above will be described with reference to Fig. 5 as well. Fig. 5 is a flow chart showing an example of the heat treatment method of the present invention. In the first heat treatment process, before the heat treatment process such as actual film formation, the temperature of the temperature measurement wafer "a" detected by the radio waves corresponding to the frequencies generated by the elastic wave elements 60a to 60e of the respective heating zones is determined in advance. The C & correlation is stored in advance in the temperature control unit 50 in relation to the power supplied to each of the heaters 1a to 1〇e. Further, in the case of using the thermocouples 17aM7e, 46a to 46e, The relationship between the temperature detection values and the temperature obtained by the radio waves of the elastic wave elements 6Ga to 6Ge is obtained in advance, and the process of performing the actual film formation process on the semiconductor wafer w, etc. First, in the case of the unloading of the semiconductor wafer w, 'the processing container 8 is maintained at a process temperature or a lower temperature when the heat treatment device 2 assumes a standby state in the lower loading region. Thereafter, the A plurality of wafers W at normal temperature are placed in the state of the wafer boat 22, and the wafer boat 22 is lifted under the processing container 8 by the lower portion thereof, and the processing container 8 is used by the cover portion 127297.doc -19-200849441. Inner closed. 28 closed manifold The lower end opening portion of the 18 is provided on the boat 22 in addition to the product wafer w, and the temperature measuring wafers 58a to 58e are supported at positions corresponding to the respective heating zones. The wafer temperature is detected by the respective thermocouples 17a to 17e, 46a to 46, and the temperature of the wafer is detected by radio waves from the respective elastic wave elements 60a to 60, as shown in FIG. The operation of the temperature control system increases the input power to each heater 1a~i〇e
而使晶圓溫度上升’穩定地維持特定之製程溫度。其後， 由氣體導人機構40之氣时嘴42將特定之成顧之處理氣 體導入處理容器8内。 如上所述，由氣體喷嘴42將處理氣體導入内筒4内之底 部後，-面與在此中旋轉之晶圓w接觸，—面成膜反應而 上升。其後，由頂部向内筒4與外筒6之間之間隙流下而由 排氣口 44排出至容器外。在製程中之晶圓w之溫度控制係 由各彈性波元件60a〜60e所發射之電波求出各加熱區之晶 圓溫度，以使此晶圓溫度達到預定之目標溫度方式，例如 藉PID控制而控制對各加熱器1 〇a〜i 〇6之供電所執行。 在此，也參照圖6A、圖6B說明有關彈性波元件6〇a〜6〇e 之動作原理。又，圖6 A係說明表面彈性波元件構成之彈性 波元件之動作原理之動作原理圖，圖6B係說明體彈性波元 件構成之彈性波元件之動作原理之動作原理圖。如圖6八所 示，此表面彈性波元件60A例如係由如日本特開 114920號公報、日本特開2003-298383號公報、或日本特 開2004-140167號公報等所揭示之蘭克賽基板元件所構 127297.doc -20- 200849441 成。此蘭克賽基板元件具有含壓電功能之四角形狀之蘭克 賽基板76。此蘭克賽基板76之大小例如為1 〇 mmx 1 5 mmx〇.5 mm程度之大小。此蘭克賽基板76之表面形成有一 對梳齒狀電極78a、78b，在各電極78a、78b安裝有天線 80a、80b ° 而，由收發器64放出相當於蘭克赛基板76之固有振動數 之特定高頻電波作為發射信號，而將高頻電壓施加至梳齒 狀電極78a、78b時，可藉蘭克賽基板76之壓電效果激振表 面彈性波。此時，音速會依照蘭克賽基板76之溫度而變 化’故上述表面彈性波依存於上述音速而共振，此彈性波 接下來會相反地變成電波而由天線8〇a、801}被輸出。 因此，由收發器64接收上述被輸出之電波而分析此接收 信號與前面之發射信號之時間差仏時，即可檢測蘭克賽基 板76之溫度。即，可使用作為無線之溫度檢測元件。將此 種原理適用於各彈性波元件6〇a〜6〇e。The wafer temperature rises steadily to maintain a specific process temperature. Thereafter, a specific processing gas is introduced into the processing container 8 by the gas nozzle 42 of the gas guiding mechanism 40. As described above, after the processing gas is introduced into the bottom portion of the inner cylinder 4 by the gas nozzle 42, the - surface is brought into contact with the wafer w which is rotated therein, and the surface film forming reaction rises. Thereafter, it flows down from the gap between the top end to the inner tube 4 and the outer tube 6, and is discharged from the exhaust port 44 to the outside of the container. The temperature control of the wafer w in the process determines the wafer temperature of each heating zone by the electric wave emitted by each of the elastic wave elements 60a to 60e, so that the temperature of the wafer reaches a predetermined target temperature mode, for example, by PID control. The control is performed on the power supply of each heater 1 〇a~i 〇6. Here, the principle of operation of the elastic wave elements 6aa to 6〇e will be described with reference to Figs. 6A and 6B. Further, Fig. 6A is a schematic view showing the principle of operation of the elastic wave element constituted by the surface acoustic wave element, and Fig. 6B is a schematic view showing the principle of operation of the elastic wave element constituted by the body elastic wave element. As shown in FIG. 6A, the surface acoustic wave device 60A is, for example, a Ranke substrate disclosed in, for example, Japanese Laid-Open Patent Publication No. Hei. The component is constructed 127297.doc -20- 200849441. This Lanxey substrate member has a quadrangular shape of a Ranke substrate 76 having a piezoelectric function. The size of the Lanxel substrate 76 is, for example, about 1 〇 mm x 1 5 mm x 〇 .5 mm. A pair of comb-shaped electrodes 78a and 78b are formed on the surface of the Lancaster substrate 76, and antennas 80a and 80b are attached to the electrodes 78a and 78b, and the number of natural vibrations corresponding to the Ranke substrate 76 is discharged from the transceiver 64. When a specific high-frequency wave is applied as a transmission signal and a high-frequency voltage is applied to the comb-shaped electrodes 78a and 78b, the surface elastic wave can be excited by the piezoelectric effect of the Ranke substrate 76. At this time, the speed of sound changes according to the temperature of the Ranke substrate 76. Therefore, the surface acoustic wave resonates depending on the above-mentioned speed of sound, and this elastic wave is reversely turned into a radio wave and is output by the antennas 8a, 801}. Therefore, when the above-mentioned outputted radio wave is received by the transceiver 64 and the time difference 此 between the received signal and the preceding transmitted signal is analyzed, the temperature of the Ranke substrate 76 can be detected. That is, it can be used as a wireless temperature detecting element. This principle is applied to each of the elastic wave elements 6a to 6〇e.
又，如圖6B所示，在LTGA所代表之體彈性波元件6〇B 之饧形，也將體彈性波元件6〇B夹入形成於連接在線圈84 之一對電極85a、85b。 此情形，也由收發器82放出相當於體彈性波元件6〇b之 固有振動數之特定高頻電波作為發射信號，而接收由體彈 |±波元件60B側輸出之“虎。而分析此接收信，虎與發射信 號之時間差Μ時，即可檢測體彈性波元件6〇b之溫度。將 此種原理適用於上述各彈性波元件6〇a〜6〇e。 在此，改變各電極78a、78b之間距及由單晶之切出角度 127297.doc -21 · 200849441 或切出厚度等時，可使元件之頻帶發生變化。在此如前所 述，各彈性波元件6〇a〜60e分別設定於互異之頻帶，分別 將兀件60a設定於fi，例如以1〇 MHz為中心之頻帶，將元 件60b δ又疋於f2，例如以2〇 mHz為中心之頻帶，將元件6〇c 設定於f3，例如以30 MHz為中心之頻帶，將元件6〇d設定 於f4，例如以4〇 MHz為中心之頻帶，將元件6〇e設定於 f5，例如以50 MHz為中心之頻帶，以防止互相發生干擾。 如圖5所不，在實際之溫度控制中，首先，由收發器64 向對應於各加熱區16a〜16e之各收發用天線52a〜52e供應發 射電力，而由各收發用天線52a〜52e向溫測用晶圓58a〜58e 之彈性波元件60a〜60e，發射相當於蘭克赛基板（表面彈性 波tl件之情形）或LTGA基板（體彈性波元件之情形）之固有 振動數之測定用電波（S1 :發射步驟）。此際，接收來自各 收發用天線52a〜52e之測定用電波之各溫測用晶圓58a〜58e 之彈性波元件60a〜60e會發生對應於當時之溫測用晶圓 58a〜58e之温度之共振，放射此共振信號（S2)。此時之電波 之產生原理如前面參照圖6A、圖6B所說明。 其次，以對應於各加熱區之收發用天線52a〜52e接收此 時產生之電波而向收發器64側傳播（S3 :接收步驟）。接 著’利用溫度分析部66分析此接收之各加熱區之電波而直 接求出各溫測用晶圓58a〜58e之溫度，即，各加熱區 16a〜16e之晶圓W之溫度（S4:溫度分析步驟）。 其後’溫度控制部5 0依據溫度分析步驟所求出之溫度， 經由加熱器驅動部68個別獨立地將加熱機構1 〇之各加熱器 127297.doc -22- 200849441 10a〜l〇e控制於呈現目標溫度（S5 ••溫度控制步驟）。藉此， 可直接測定而檢測晶圓溫度（測溫用晶圓溫度）。因此，可 施行高精度之溫度控制。 此種一連串之控制動作重複被執行（S6之否），直到經過 • 預定之製程時間為止（S6之是）。如此，在處理容器8設置 收發用天線52a〜52e，例如接收由蘭克賽基板元件或LTGA 元件等構成之彈性波元件60a〜6〇e發射之電波，依據此求 出溫度，藉此，可無線且即時高精度地正確檢測被處理體 (半導體晶圓）w，即溫測用晶圓58a〜58e之溫度而不會發生 金屬污染等，故可施行高精度之溫度控制。 又，在施行被處理體W之溫度升降之情形，也可直接測 疋此/凰度，故可正確控制例如升溫速度及降溫速度，藉 此可適正地施行升降溫控制。另外，可無線地求出被處 理體W之溫度，故即使膜附著於處理容器8之内壁面，也 可求出正確之被處理體W之溫度。 〇 又，在貫際之溫度控制中，為施行更高精度之控制，除 了溫度分析部66所求得之溫度外，最好也分別參照加熱器 用熱電偶17a〜17e&/或内部熱電偶46a〜46e之各測定值，以 施行溫度控制。 在此，測定用電波及來自彈性波元件60a〜60e之電波充 刀強之（·月形，只要將收發用天線52設定為少於$個之數即 可。此情形，一般而言’測定用電波雖可某種程度地增 強，但來自彈性波元件60a〜60e之電波則較微弱。因此， 也可將收發用天線52設定為少於5個之數，使接收用天線 127297.doc 23· 200849441 也可對應於設有收發用天線52之加熱區以外之其他加熱區 而被設置。 另外’來自各彈性波元件6〇a〜6〇e之電波屬於可達到對 應之加熱區之天線，但達不到位於相鄰之加熱區之天線之 Μ弱之電波之情形，就無干擾之虞。因此，各彈性波元件 60a〜60e之頻帶也可全部設定為同一頻帶而無必要互相改 變。又預先設置熱電偶17a〜17e及/或内部熱電偶46a〜4心 時’即使晶圓W被卸載而處理容器8内呈現空空如也之空 載時’也可將處理容器8之溫度預加熱至適正之溫度。 又’在上述之實施型態中，雖將收發用天線52a〜52e設 置於處理容器8之外側，但不限定於此，也可如圖7所示之 本發明之熱處理裝置之第i變形例所示般，設置於處理容 态8内。在此，將收發用天線52a〜52e分別設定於處理容器 8之内筒4與晶舟22之間。又，在圖7中，在與圖1中之構成 相同之構成部分附上同一符號。 又，在圖1及圖7所示之實施型態中，使用環狀之天線作 為收發用天線52a〜52e，但不限定於此，也可使用桿狀之 收發用天線（含桿狀之發射用天線及桿狀之接收用天線）。 圖8係表示此種本發明之熱處理裝置之第2變形例，圖9係 表示圖8所示之熱處理裝置之桿狀收發用天線之配置例之 平面圖。又’在與圖1中之構成相同之部分附上同一符 號。 ' 在圖8中，於處理容器8之外側，沿著處理容器8之長度 方向设有形成桿狀之收發用天線90。在圖9中，沿著容器 127297.doc -24- 200849441 周方向等間隔地配置複數支，例如4支桿狀之收發用天線 90a、90b、90c、9〇d。又，此天線數也可為i支，只要可 依照電波之強度增減即可。又，此桿狀之收發用天線 90a〜90d也可設置於處理容器8内。 使用此桿狀之收發用天線90a〜90d之情形，各收發用天 線90a〜90d可捕捉來自所有加熱區16a〜丨心之彈性波元件 60a〜60e之電波。因此，為防止干擾，預先將各彈性波元 件60a〜60e之頻帶設定成互異。此情形，也可發揮與圖^斤 示之熱處理裝置同一之作用效果。 又，在上述各實施型態中，雖說明有關僅在處理容器8 側設置收發用天線52a〜52d、90a〜90d之情形，但不限定於 此。即，也可如圖1〇所示之本發明之熱處理裝置之第3變 形例所不般，在處理容器8之下方，設置使由處理容器8卸 載之晶舟22待機，並施行晶圓W之移載之裝載區域94，在 此裝載區域94設置追加之收發用天線9〇X、90y(追加之發 射用天線及追加之接收用天線）。在此裝載區域％内，如 上所述，騎晶®W之移載，且晶舟22本身也有向水平方 向移動之情形。因&，設置非環狀，而為桿狀之收發用天 線9〇X、90y’甚至於最好沿著向晶㈣之水平方向之移動 路徑設置收發用天線9〇x、9〇y。 據此’在製程後’也可即時求出保持於晶舟以晶圓溫 又口此，例如可正確辨識晶圓溫度下降至可操作之溫 度，故可開始施行晶圓w之移載，而沒有無意義之待機日； 門可提河生產率。又，在上述各實施型態中，雖將彈性 127297.doc -25- 200849441 波元件設置於溫測用晶圓58a〜58e之表面，但不限定於 此，也可將其埋入溫測用晶圓58a〜58e内。 又’在上述各實施型態中，雖說明有關在溫測用晶圓 5 8&〜586，分別設置1個彈性波元件6(^〜6(^之情形，但不 限定於此’也可在1片溫測用晶圓設置複數彈性波元件。 圖11A係表示溫測用晶圓之變形例丨之剖面圖，圖丨1B係表 示溫測用晶圓之變形例2之平面圖。在圖11A中，將溫測用 晶圓58x分割成上下2部分，將2個彈性波元件60x、60y埋 入其中心部與周邊部，再接合分割之晶圓。 藉此，2個彈性波元件6〇x、60y呈現埋入溫測用晶圓58x 内之狀態，故可防止此彈性波元件60x、60y引起之污染之 發生。 如此，將2個彈性波元件60x、60y埋入1片溫測用晶圓 5 8x内之情形，為防止干擾，將兩彈性波元件6〇x、60y之 頻帶設定成互異。 又，在圖11B所示之溫測用晶圓之變形例2之情形，顯示 在溫測用晶圓58x之表面之中心與周邊部設有複數個，具 體上設有5個彈性波元件60f、60g、60h、60i、60j之情 形。又，也可將此等彈性波元件60f、6〇g、60h、60i、60j 埋入溫測用晶圓5 8x内。此情形，可測定晶圓之面内溫度 之分佈。此情形，為防止干擾，最好將各彈性波元件 60f、60g、60h、60i、60j之頻帶設定為互異。 一般而言，由於成膜製程，在施行製程時，或升降溫 時，也有最好在晶圓面内形成溫度斜率之情形。此種情 127297.doc -26- 200849441 形，如上述般預先在溫 定彈性波元件6Gx、6()y時gBa058x之中央部與周邊部設 確之溫度斜率。 卩可在晶圓面内形成適正且正 α 58 58 °在衣置内’預先準傷包含與如上述之溫測用晶 0 58a〜58e、58Χ相同之構成 , 成之預備之溫測用被處理體，在 4化之日守寻，依需要或定 疋/月地自動更換溫測用被處理體 58一他與預備之溫測用被處理體。 又，在本實施型能φ，a 〜、 雖以内筒4與外筒6構成之雙重管 式之處理容器8為例加以句日日y J刀以况明，但不限定於此，也可將本 發明適用於單管式之處理衮 处里谷為。又，在處理容器8方面， 也不限定於縱型之處理容器，可將本發明適用於橫型之處 理容器。 另外，在此，作為熱處理，雖以成膜處理為例加以說 明，但不限定於此，也可將本發日㈣詩氧化擴散處理、 退火處理、蝕刻處理、改性處理、使用電漿之電漿處理 等又，使用電漿之情形，如上所述，為防止雜訊之發 生，最好使電衆產生用之高頻電力之頻率與測定用電波之 頻帶相異。 又，作為彈性波元件，可使用由選擇自鑭鈕酸鎵鋁 (LGTA)、水晶（Si〇2)'氧化鋅（Zn〇)、羅謝爾鹽（酒石酸鉀 鈉：KNaC4H406)、鈦酸鍅酸鉛（PZT:pb(Zr，Ti)〇3)、鈮酸鋰 (LiNb〇3)、钽酸鋰（LiTa〇3)、四硼酸鋰（Li2B4〇7)、蘭克賽 (I^GasSiOM)、氮化 I呂、電氣石（Tourmaline)、聚偏二 I 乙烯（PVDF)組成之群中之1種材料之基板元件。又，在 127297.doc -27- 200849441 此作為被處理體’雖以半導體晶圓為例加以說明，但不 限定於此，也可將本發明適用於玻璃基板、LCD基板、陶 瓷基板等。 【圖式簡單說明】 圖1係表示本發明之熱處理裝置之剖面構成圖。 圖2A係表示處理容器與環狀之收發天線之關係位置之平 面圖’圖2B係圖2A之A-A線剖面圖。 圖3 A係表示設有彈性波元件之溫測用被處理體之側面 圖圖係表示设有彈性波元件之溫測用被處理體之立體 圖，圖3C係表示埋入彈性波元件之溫測用被處理體之立體 圖。 圖4係表示熱處理裝置之溫度控制系之系統圖。 圖5係表示本發明之熱處理方法之一例之流程圖。 圖6A係說明表面彈性波元件構成之彈性波元件之動作原 理之動作原理圖，圖6B係說明體彈性波元件構成之彈性波 元件之動作原理之動作原理圖。 圖7係表示本發明之熱處理裝置之第1變形例之圖。 圖8係表示本發明之熱處理裝置之第2變形例之圖。 圖9係表示圖8所示之熱處理裝置之桿狀收發用天線之配 置例之平面圖。 圖10係表示本發明之熱處理裝置之第3變形例之圖。 圖1 1A係表示溫測用晶圓之變形例〗之剖面圖，圖Η B係 表示溫測用晶圓之變形例2之平面圖。 【主要元件符號說明】 127297.doc •28- 200849441Further, as shown in Fig. 6B, the body elastic wave device 6A is represented by a 饧 shape of the body elastic wave device 6A, which is also formed by being connected to one of the counter electrodes 85a and 85b connected to the coil 84. In this case, the transceiver 82 also emits a specific high-frequency wave corresponding to the natural vibration number of the bulk acoustic wave device 6〇b as a transmission signal, and receives the “tiger” output from the body bomb|±wave element 60B side. When the time difference between the tiger and the transmitted signal is received, the temperature of the body elastic wave element 6〇b can be detected. This principle is applied to each of the above elastic wave elements 6〇a to 6〇e. Here, the electrodes are changed. When the distance between 78a and 78b and the angle of cut by the single crystal are 127297.doc -21 · 200849441 or when the thickness is cut or the like, the frequency band of the element can be changed. Here, as described above, each elastic wave element 6〇a~ 60e is respectively set in mutually different frequency bands, and the component 60a is set to fi, for example, a frequency band centered at 1 〇 MHz, and the element 60b δ is further set to f2, for example, a frequency band centered at 2 〇 mHz, and the component 6 is 〇c is set at f3, for example, a frequency band centered at 30 MHz, and component 6〇d is set to f4, for example, a frequency band centered at 4 〇 MHz, and element 6 〇e is set at f5, for example, centered at 50 MHz. Frequency bands to prevent mutual interference. As shown in Figure 5, at actual temperature In the control, first, the transmission power is supplied from the transceiver 64 to each of the transmission/reception antennas 52a to 52e corresponding to the respective heating zones 16a to 16e, and the elasticity of the transmission/reception antennas 52a to 52e to the temperature measurement wafers 58a to 58e. The wave elements 60a to 60e emit radio waves for measurement corresponding to the natural vibration number of the Ranke substrate (in the case of the surface elastic wave t1) or the LTGA substrate (in the case of the bulk acoustic wave device) (S1: emission step). The elastic wave elements 60a to 60e of the respective temperature measurement wafers 58a to 58e that receive the measurement radio waves from the transmission/reception antennas 52a to 52e generate resonances corresponding to the temperature of the temperature measurement wafers 58a to 58e at that time. The resonance signal (S2) is radiated. The principle of generating the radio wave at this time is as described above with reference to Figs. 6A and 6B. Next, the transmitting and receiving antennas 52a to 52e corresponding to the respective heating zones receive the radio waves generated at this time and transmit and receive them. The side of the device 64 is propagated (S3: receiving step). Then, the temperature of each of the receiving heating cells 58a to 58e is directly obtained by analyzing the radio waves of the respective heating zones by the temperature analyzing unit 66, that is, the respective heating zones 16a to 16e wafer W temperature (S4: Temperature Analysis Step). Thereafter, the temperature control unit 50 individually and independently heats the heaters of the heating mechanism 1 via the heater drive unit 68 in accordance with the temperature obtained by the temperature analysis step 127297.doc -22- 200849441 10a~l〇e is controlled to present the target temperature (S5 •• Temperature control step). This allows direct measurement and detection of the wafer temperature (wafer temperature for temperature measurement). Therefore, high-precision temperature control can be performed. This series of control actions are repeatedly executed (No in S6) until the predetermined process time has elapsed (S6 is). In the processing container 8, the transmitting/receiving antennas 52a to 52e are provided, and for example, radio waves emitted from the elastic wave elements 60a to 6〇e composed of a Ranke substrate element or an LTGA element are received, and the temperature is obtained therefrom. The temperature of the object to be processed (semiconductor wafer) w, that is, the temperature of the temperature-measuring wafers 58a to 58e is accurately detected in a timely manner with high precision, and metal contamination or the like is not generated, so that high-precision temperature control can be performed. Further, in the case where the temperature of the object W to be processed is raised and lowered, the phollix can be directly measured. Therefore, for example, the temperature increase rate and the temperature decrease rate can be accurately controlled, whereby the temperature rise and fall control can be appropriately performed. Further, since the temperature of the object to be processed W can be obtained wirelessly, even if the film adheres to the inner wall surface of the processing container 8, the temperature of the object W to be processed can be obtained. Further, in the continuous temperature control, in order to perform higher-precision control, in addition to the temperature obtained by the temperature analyzing unit 66, it is preferable to refer to the heater thermocouples 17a to 17e & or the internal thermocouple 46a, respectively. Each measured value of ~46e is controlled by the temperature. Here, the measurement radio wave and the radio wave charging from the elastic wave elements 60a to 60e are strong (the moon shape is only required to set the transmission/reception antenna 52 to less than $. In this case, generally, 'measurement Although the radio waves can be enhanced to some extent, the radio waves from the elastic wave elements 60a to 60e are weak. Therefore, the transmitting/receiving antenna 52 can be set to less than five, so that the receiving antenna 127297.doc 23 · 200849441 may be provided corresponding to a heating zone other than the heating zone in which the transmitting and receiving antenna 52 is provided. Further, 'the electric wave from each of the elastic wave elements 6〇a to 6〇e belongs to an antenna that can reach the corresponding heating zone, However, in the case where the weak electric wave of the antenna located in the adjacent heating zone is not obtained, there is no interference. Therefore, the frequency bands of the respective elastic wave elements 60a to 60e can all be set to the same frequency band without being changed from each other. When the thermocouples 17a to 17e and/or the internal thermocouples 46a to 4 are placed in advance, the temperature of the processing container 8 can be preheated to a proper temperature even if the wafer W is unloaded and the processing container 8 is empty and empty. Temperature. In the above-described embodiment, the transmitting/receiving antennas 52a to 52e are provided on the outer side of the processing container 8, but the present invention is not limited thereto, and the i-th modification of the heat treatment apparatus of the present invention as shown in Fig. 7 may be employed. Generally, it is disposed in the processing volume 8. Here, the transmitting and receiving antennas 52a to 52e are respectively set between the inner tube 4 of the processing container 8 and the wafer boat 22. Further, in Fig. 7, in Fig. 1, The same components are denoted by the same reference numerals. In the embodiment shown in Figs. 1 and 7, a ring-shaped antenna is used as the transmitting and receiving antennas 52a to 52e. However, the present invention is not limited thereto, and a rod may be used. An antenna for transmitting and receiving (including a rod-shaped transmitting antenna and a rod-shaped receiving antenna). Fig. 8 is a second modification of the heat treatment apparatus of the present invention, and Fig. 9 is a heat treatment apparatus shown in Fig. 8. A plan view of an arrangement example of the rod-shaped transmitting/receiving antenna. The same reference numerals are attached to the same portions as those in Fig. 1. In Fig. 8, on the outer side of the processing container 8, along the length of the processing container 8. A rod-shaped transmitting and receiving antenna 90 is provided. In Fig. 9, along the container 127297.doc -24- 200849441 A plurality of branches, such as four rod-shaped transmitting and receiving antennas 90a, 90b, 90c, and 9〇d, are arranged at equal intervals in the circumferential direction. Further, the number of the antennas may be i, as long as the radio waves can be used. Further, the rod-shaped transmitting and receiving antennas 90a to 90d may be provided in the processing container 8. When the rod-shaped transmitting and receiving antennas 90a to 90d are used, the transmitting and receiving antennas 90a to 90d may be used. The radio waves from the elastic wave elements 60a to 60e of all the heating regions 16a to 丨 are captured. Therefore, in order to prevent interference, the frequency bands of the respective elastic wave devices 60a to 60e are set to be different from each other in this case. The heat treatment device of the same type shows the same effect. In the above-described embodiments, the case where the transmitting and receiving antennas 52a to 52d and 90a to 90d are provided only on the processing container 8 side is described, but the present invention is not limited thereto. That is, as shown in FIG. 1A, in the third modification of the heat treatment apparatus of the present invention, the wafer boat 22 unloaded by the processing container 8 may be placed under the processing container 8 and the wafer W may be applied. In the loading area 94 to be transferred, additional transmitting and receiving antennas 9〇X and 90y (additional transmitting antennas and additional receiving antennas) are provided in the loading area 94. Within this loading area %, as described above, the transfer of the wafer W is performed, and the boat 22 itself also moves in a horizontal direction. Since the ' is acyclic, the rod-shaped transmitting and receiving antennas 9〇X, 90y' are even provided with the transmitting and receiving antennas 9〇x and 9〇y along the moving path in the horizontal direction of the crystal (4). According to this, after the 'process,' it can be immediately found that the wafer is held at the wafer temperature, for example, the wafer temperature can be correctly recognized and lowered to an operable temperature, so that the transfer of the wafer w can be started. There is no meaningless standby day; Menketi River productivity. Further, in each of the above embodiments, the elastic 127297.doc -25 - 200849441 wave element is provided on the surface of the temperature measurement wafers 58a to 58e, but the invention is not limited thereto, and may be buried in the temperature measurement. Inside the wafers 58a to 58e. Further, in each of the above-described embodiments, it is described that one of the elastic wave elements 6 (^ to 6 (wherein the case of ^) is provided in the temperature measurement wafers 5 8 & 586, but it is not limited thereto. A plurality of elastic wave elements are provided on one wafer for temperature measurement. Fig. 11A is a cross-sectional view showing a modification of the temperature measurement wafer, and Fig. 1B is a plan view showing a modification 2 of the temperature measurement wafer. In the 11A, the temperature measurement wafer 58x is divided into two upper and lower portions, and the two elastic wave devices 60x and 60y are buried in the center portion and the peripheral portion, and the divided wafers are joined. Thereby, the two elastic wave elements 6 are 〇x and 60y are embedded in the temperature measurement wafer 58x, so that the occurrence of contamination by the elastic wave elements 60x and 60y can be prevented. Thus, the two elastic wave elements 60x and 60y are buried in one piece of temperature measurement. In the case of using the wafer 5 8x, the frequency bands of the two elastic wave elements 6 〇 x and 60 y are set to be different from each other in order to prevent interference. Further, in the case of the modification 2 of the temperature measurement wafer shown in FIG. 11B, A plurality of centers and peripheral portions of the surface of the temperature measuring wafer 58x are provided, and specifically, five elastic wave elements 60f and 60g are provided. In the case of 60h, 60i, 60j, the elastic wave elements 60f, 6〇g, 60h, 60i, 60j may be embedded in the temperature measurement wafer 58x. In this case, the in-plane of the wafer can be measured. In this case, in order to prevent interference, it is preferable to set the frequency bands of the respective elastic wave elements 60f, 60g, 60h, 60i, and 60j to be different from each other. Generally, due to the film forming process, during the process of manufacturing, or lifting At the time of temperature, there is also a case where the temperature slope is preferably formed in the plane of the wafer. This is the shape of 127297.doc -26- 200849441, which is pre-formed in the central part of gBa058x when the elastic wave element 6Gx, 6()y is warmed as described above. The temperature gradient with the peripheral part is set. 卩 It can be formed in the plane of the wafer and the positive α 58 58 ° in the clothing. The pre-injury includes the same composition as the above-mentioned temperature measurement crystals 0 58a~58e, 58Χ. The preparation body for the temperature measurement prepared by the preparation is to be searched on the day of the fourth day, and the body to be processed for the temperature measurement 58 and the object to be processed for the temperature measurement are automatically replaced as needed or fixed. In the present embodiment, the double-tube type processing container 8 having the φ, a 〜 and the inner tube 4 and the outer tube 6 is It is not limited to this, but the present invention can also be applied to the single-tube type processing of the valley. Moreover, in terms of the processing container 8, it is not limited to the vertical processing. In the container, the present invention can be applied to a horizontal processing container. Here, although the film forming process is described as an example of the heat treatment, the present invention is not limited thereto, and the present invention may be oxidized and diffused. Annealing treatment, etching treatment, modification treatment, plasma treatment using plasma, etc., in the case of using plasma, as described above, in order to prevent the occurrence of noise, it is preferable to make the frequency of the high-frequency power used by the electric power generation. It is different from the frequency band of the measurement radio wave. Further, as the elastic wave element, it is possible to use galvanic aluminum (LGTA), crystal (Si〇2)' zinc oxide (Zn〇), Rochelle salt (sodium potassium tartrate: KNaC4H406), barium titanate. Lead acid (PZT: pb(Zr, Ti)〇3), lithium niobate (LiNb〇3), lithium niobate (LiTa〇3), lithium tetraborate (Li2B4〇7), Ranke (I^GasSiOM) A substrate component of one of a group consisting of nitrided Ilu, tourmaline, and polyvinylidene fluoride (PVDF). Further, although the semiconductor wafer is described as an example of the object to be processed 127297.doc -27-200849441, the present invention is not limited thereto, and the present invention can be applied to a glass substrate, an LCD substrate, a ceramic substrate or the like. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional structural view showing a heat treatment apparatus of the present invention. Fig. 2A is a plan view showing a positional relationship between a processing container and a ring-shaped transmitting/receiving antenna. Fig. 2B is a cross-sectional view taken along line A-A of Fig. 2A. 3A is a perspective view showing a temperature-measuring object to be processed provided with an elastic wave element, and a perspective view showing a temperature-measuring object to be processed provided with an elastic wave element, and FIG. 3C is a temperature measurement of the embedded elastic wave element. Use a perspective view of the object being processed. Fig. 4 is a system diagram showing a temperature control system of the heat treatment apparatus. Fig. 5 is a flow chart showing an example of the heat treatment method of the present invention. Fig. 6A is a schematic view showing the principle of operation of the elastic wave element formed of the surface acoustic wave device, and Fig. 6B is a schematic view showing the principle of operation of the elastic wave element constituted by the bulk acoustic wave element. Fig. 7 is a view showing a first modification of the heat treatment apparatus of the present invention. Fig. 8 is a view showing a second modification of the heat treatment apparatus of the present invention. Fig. 9 is a plan view showing an arrangement example of a rod-shaped transmitting/receiving antenna of the heat treatment apparatus shown in Fig. 8. Fig. 10 is a view showing a third modification of the heat treatment apparatus of the present invention. Fig. 1A is a cross-sectional view showing a modification of the wafer for temperature measurement, and Fig. B is a plan view showing a modification 2 of the wafer for temperature measurement. [Key component symbol description] 127297.doc •28- 200849441
2 熱處理裝置 4 内筒 6 外筒 8 處理容器 10 加熱機構 10a〜1Oe 加熱器 12 隔熱材料 14 加熱爐 15 電漿產生機構 16a〜16e 加熱區 17a〜17e 、 46a〜46e 熱電偶 18 歧管 20 支持環 22 晶舟 24 保溫筒 26 轉盤 28 蓋部 30 旋轉軸 32 磁性流體封 34 密封構件 36 升降機構 38 臂 40 氣體導入機構 42 氣體喷嘴 127297.doc -29- 200849441 44 48、54 502 Heat treatment device 4 Inner cylinder 6 Outer cylinder 8 Processing vessel 10 Heating mechanism 10a~1Oe Heater 12 Insulation material 14 Heating furnace 15 Plasma generating mechanism 16a~16e Heating zones 17a~17e, 46a~46e Thermocouple 18 Manifold 20 Support ring 22 Boat 24 Insulation cylinder 26 Turntable 28 Cover 30 Rotary shaft 32 Magnetic fluid seal 34 Sealing member 36 Lifting mechanism 38 Arm 40 Gas introduction mechanism 42 Gas nozzle 127297.doc -29- 200849441 44 48, 54 50
52 、 52a〜52e 、 90 、 90a〜90d、90x、90y 56、80a、80b 58a〜58e 、 58x 60A 60B 60a〜60j 、 60x 、 60y 62a〜62b 64、82 66 68 70 72 76 78a、78b 84 85a、85b 94 W 排氣口 保護管 溫度控制部 收發用天線 天線 溫測用晶圓 表面彈性波元件 體彈性波元件 彈性波元件 線 收發器 溫度分析部 加熱器驅動部 控制機構 記憶媒體 蘭克賽基板 梳齒狀電極 線圈 電極 裝載區域 被處理體（半導體晶圓） 127297.doc -30-52, 52a~52e, 90, 90a~90d, 90x, 90y 56, 80a, 80b 58a~58e, 58x 60A 60B 60a~60j, 60x, 60y 62a~62b 64, 82 66 68 70 72 76 78a, 78b 84 85a 85b 94 W Exhaust port protection tube temperature control unit Transmitting antenna Antenna temperature measurement Wafer surface Elastic wave element Body Elastic wave element Elastic wave element Line Transceiver Temperature analysis part Heater drive part Control mechanism Memory medium Lancaster substrate Comb-shaped electrode coil electrode loading area object to be processed (semiconductor wafer) 127297.doc -30-