TW200849359A - Methods and apparatus for cleaning semiconductor wafers - Google Patents

Abstract

An apparatus for cleaning a surface of wafer or substrate includes a plate being positioned with a gap to surface of the wafer or substrate, and the plate being rotated around an axis vertical to surface of wafer or substrate. The rotating plate surface facing surface of the wafer or substrate has grooves, regular patterns, and irregular patterns to enhance the cleaning efficiency. Another embodiment further includes an ultra sonic or mega sonic transducer vibrating the rotating plane during cleaning process.

Description

200849359 IX. Description of invention:

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a method of cleaning a semiconductor wafer and, more particularly, to combining or not combining ultrasonic waves. It has a more rotating plate to improve the efficiency of removing difficult and contaminants, and the smallest material loss of the rotating wafer structure of the piece. For semiconductors [Prior Art] Ο c, semiconductor components are fabricated on a semiconductor wafer using several to form a transistor and interconnect components. To connect the electrical c to the semiconductor wafer, conductive (eg, metallic) and similar structures are formed in the dielectric material, vias

= component. The channel and the via hole connect the internal circuit of the transistor element, and the external body 7L of the semiconductor element and the power source to the semiconductor element. The electrical signals between, for example, 半导体 ϊ ,, semiconductor (4) can be subjected to the following operations: for example, 'masking, etching, and aging, to form the electronic circuit required for the semiconductor device. _Yes, multiple = and the plasma engraved material is in the dielectric on the semi-laid crystal, more than 2 recessed areas, the recessed area ^ = ^ in order to save her after staying in the channel and pass In the hole dye or ashing, a wet cleaning step is required.曰: 制造 制造 制造 ( 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 65 Diluted 5 Ο

Cj 200849359 uses only deionized wafers. However, the wafers that are diluted to the cans are usually removed from the channels and the two cores in the vias. Therefore, similar ultrasonic and mega-sound waves are required. = Effectively remove particles. Ultrasonic and megasonic waves can be used to remove particles while the power intensity and mechanical force are within the damage limits of the wafer structure such as trenches and vias.

4 3 2 6 The 5 3 wave two-component bonding nozzle is used to clean the semiconductor wafer. The US = sd is added to apply the megasonic energy to the fluid. In the shape of the nozzle, the time-slot of the axis is distracted by the mega-money and impinges on the surface. US 6, 〇 39, 〇 59 reveals that _ energy source === wave energy is sent to the fluid. The position of the surface. The surface is located at a position close to the upper surface of the wafer. The end of a short probe is located close to the surface. At the time of twirling, the probe revealed "an energy source-rod vibration" at 6'843, 257 Β2 after the wafer surface, and the cup 2 = surface parallel axis rotates. The rod = such as a spiral groove. Need - a better cleaning method ^ = [Invention] Particles and contaminants on the Q surface or substrate. The embodiment of the invention discloses a 200849359 panel located close to the surface of the wafer or substrate. The plate can be moved parallel to the surface of the wafer or substrate. The plate rotates about an axis that is perpendicular to the surface of the wafer or substrate. Another embodiment of the invention discloses a plate that is vibrated by an ultrasonic or megasonic transducer. The plate can be moved parallel to the surface of the wafer or substrate. The plate is rotated about an axis perpendicular to the surface of the wafer or substrate. Another embodiment of the invention discloses a plate that is vibrated by an ultrasonic or megasonic transducer. The rotating surface of the plate facing the surface of the wafer or substrate has grooves, regular patterns or irregular patterns to improve cleaning efficiency. The plate can be moved parallel to the wafer or substrate surface. The plate rotates about an axis that is perpendicular to the crystal or substrate surface. Another embodiment of the invention discloses a plate that is vibrated by an ultrasonic or megasonic transducer. The rotating plate has holes for delivering cleaning chemicals or deionized water to the surface of the wafer. The plate can be moved parallel to the wafer or substrate surface. The plate rotates about an axis that is perpendicular to the surface of the wafer or substrate. The above and other objects, features and advantages of the present invention will become more <RTIgt; [Embodiment] According to an exemplary embodiment, Figs. 1A-1C show details of a wafer cleaning apparatus using a rotating plate. The cleaning apparatus includes a wafer 1〇1, a plate 1〇〇8 driven by a rotary drive mechanism 1004, and a nozzle 1012 dispensing a cleaning chemical or deionized water 1032. The plate 1008 is parallel to the surface of the wafer 1〇1〇 and moves in a direction parallel to the surface of the wafer 1〇1〇. The rotating plate rotates the fluid between the rotating plate 1008 and the wafer 1〇1〇 to improve the cleaning efficiency of 200849359. The interval between the rotating plate and the wafer cassette 010 is in the range of 0.1 mm and 10 mm, preferably 2 mm. Figure 2Α-2Ε will be described in detail. During the cleaning process, the wafer 1010 can be rotated about the center of the wafer at a rotational speed of one while the plate 1004 is rotated at a speed of two. The plate 1008 can be moved in the lateral direction by constant catching or shifting. When the rotating plate ι 08 moves to the center of the wafer, the lateral moving speed is set to a high speed, and when the rotating plate 1008 moves to the edge of the wafer, the lateral moving speed Set to low speed.

旋转 The rotational speed 1 of the wafer 1010 may be constant speed or variable speed. When the rotating plate moves to the center of the wafer, the rotational speed 1 is set to a high speed, and when the rotating plate moves to the edge of the wafer, the rotational speed 1 is set to a low speed.囷A 2Ε shows the flow of cleaning chemicals or cesium 1302 during the cleaning process. As shown in Fig. 2A, when the same point of the wafer is passed, the fluid passing through the same point of the wafer toilet is doubled to B, C, for example, from 18 degrees to the temperature of the body. The direction of _ has changed from E to F, G, H, and A, such as ... Λ ft ISO degrees. Figure 2B shows the beginning of the singer. The particles in the fluid passages and through holes will be effectively removed. Also b ¥, shown in the soil for silk surface and pollutants (4) - an example, the following organic removal agent · · ; : nh4oh: h2〇2: h2〇.1:1; 5; metal contaminant removal Agent: HCl: H2 〇 2. H2C) = 1:1 ': 6 200849359 Oxide remover: hf: h2o = i: ioo.

Lj Figure 3 illustrates another embodiment of a wafer cleaning apparatus that uses a rotating plate in accordance with the present invention. This embodiment is similar to the example shown in Figures 1A and 1B 'only the wafer 3010 is attached to a laterally movable chuck 3020, and an ultrasonic or megasonic transducer 3〇〇6 is coupled to the rotation. Above the board 3008. The base 3020 can be driven to rotate using the drive mechanism 3022 and can be moved laterally by the moving mechanism 3026 and the guide 3024. The guide 3024 can be a linear guide or a curved guide. Ultrasonic or megasonic equipment is used to generate mechanical vibrational energy that is transmitted through the rotating plate 3008 and chemical fluid 3032 to the wafer surface. Because the transducer 3006 is in a rotating state during the cleaning process, the transducer 3〇〇6 therefore requires a brush to drive the input and output current to drive the transducer itself. The frequency of the transducer can be set in the ultrasonic and megaphones according to the particles that need to be removed. The granules made _ solution to Gu Wei. The scales range from Shanhetz to Fenghez, and the frequency of megasonic waves ranges from 卞:z to 10M Hz. In order to clean different scales on the same substrate or wafer: = The frequency of this can be selected to use the respective frequencies in sequence = Figure 4 shows the wafer cleaning equipment using the - rotating plate: The described embodiment is similar to that of Figures 1A and 1B...not completely parallel to the wafer surface? The board is at 0-15 degrees. Mouthwashing, angular range Figures 5A-5B illustrate an embodiment of an acoustic wave device in accordance with the present invention. In the picture = 9 200849359 疋 plane. However, as shown in Fig. 5Α and 5Β _ a plurality of semicircular shapes. As shown in Fig. 5 f, , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The mechanical wave can be more effective, so the angle of the mechanical wave pattern 指向 pointing (ο-) can improve the cleaning efficiency and = fineness, the sample

C ϋ passes through the wafer 101. The surface fluid = two shifts: two makes the invention create three effects in the cleaning process; In general, the semi-cylinder structure on the Ϊ Ϊ Ϊ 〇 〇 〇 提供 提供 提供 提供 提供 提供 提供 提供 提供 提供 提供 提供 提供 提供 提供 提供 提供 提供 提供 提供 提供 提供 提供 提供 提供 提供 提供 提供 提供 半 半 半 半 半 半 半 半 半 半 半 半A further embodiment of the wafer cleaning apparatus used in accordance with the present invention is not provided. The described embodiment is similar to that of Figures 5A and 5, except that the 6-up body is a _-shaped cylinder rather than a semi-circular cylinder. Figure 7A and Figure 7 show another embodiment of a wafer cleaning apparatus using a rotating plate in accordance with the present invention. The embodiment is similar to the embodiment of Figures 5A and 5, except that the cylinder on the rotating plate 7008 is a small semi-cylinder rather than a semi-circular cylinder. 10 200849359 Figures 8A and 8B illustrate another embodiment of a wafer cleaning apparatus using a rotating plate in accordance with the present invention. The embodiment is similar to the embodiment of Figures 5A and 5B. The cylinders only on the rotating plate 80 (10) are triangular cylinders rather than semi-circular cylinders. • Figures 9A and 9B illustrate another embodiment of a wafer cleaning apparatus using a rotating plate in accordance with the present invention. The embodiment is similar to the embodiment of Figures 5A and 5B except that the cylinder on the rotating plate 8008 is a trapezoidal cylinder rather than a semi-circular cylinder. 10A and 10B show another embodiment of a wafer cleaning apparatus using a rotating plate in accordance with the present invention. The embodiment is similar to the embodiment of Figures 5A and 5B except that the cylinders on the rotating plate 10008 are rectangular cylinders rather than semi-circular cylinders. 11A and 11B illustrate another embodiment of a wafer cleaning apparatus using a rotating plate in accordance with the present invention. The embodiment is similar to the embodiment of Figures 5A and 5B except that the cylinder on the rotating plate 11 (8) 8 is a double triangular cylinder rather than a semi-circular body. Figures 12A and 12B illustrate another embodiment of a wafer cleaning apparatus using a rotating plate in accordance with the present invention. The embodiment is similar to the embodiment of Figure 5A and Figure except that the cylinder on the rotating plate 12008 is a semi-octagonal cylinder rather than a semi-circular cylinder. ^ Figures 13A and 13B illustrate another embodiment of a wafer cleaning apparatus using a rotating plate in accordance with the present invention. The embodiment is similar to the embodiment of Figure 5, Figure 5, except that the cylinder on the rotating plate 13008 is a saddle cylinder rather than a semi-circular cylinder. 200849359 Figures 14A and 14B illustrate another embodiment of a wafer cleaning apparatus using a rotating plate in accordance with the present invention. The embodiment is similar to the embodiment of Figures 5A and 5B = except that the pattern on the rotating plate is a separate hemisphere rather than a recessed half cylinder. • Figures 15A and 15B show a circle using a rotating plate in accordance with the present invention. Another embodiment of the cleaning apparatus. The embodiment is similar to the embodiment of Figures 14A and 14 = except that the pattern on the rotating plate is a separate pyramid rather than a separate hemisphere. 〇 Figures 16A and 16B illustrate another embodiment of a wafer cleaning apparatus using a rotating plate in accordance with the present invention. The embodiment is similar to the embodiment of Figures 14A and 14B except that the pattern on the rotating plate is a pyramid rather than a separate hemisphere. 17A and 17B illustrate another embodiment of a wafer cleaning apparatus using a rotating plate in accordance with the present invention. The figure on the rotating plate 17008 is a single convex cylinder. Fig. 18A and the brain* show another embodiment of a wafer crucible cleaning apparatus using a rotating plate in accordance with the present invention. The pattern on the rotating plate 1_8 is a single concave cylinder. Figure i9 is a further embodiment of a wafer cleaning apparatus using a rotating plate in accordance with the present invention. The pattern on the rotating plate 19008 is a single convex cylinder and a single concave cylinder. • ® 2GA and 20B show another embodiment of a wafer cleaning apparatus using a rotating plate in accordance with the present invention. It includes a rotating plate 2〇〇〇8, a fixed ultrasonic or megasonic transducer 20006, and a drive mechanism 20004 that drives the rotating plate 靡s. There is a hole 2〇〇3() on the transducer 20006 for introducing chemical fluid or deionized water 20032. The chemical fluid or deionized water 20032 flows out through the space between the rotating plate 20008 and the transducer 2〇〇〇6 to reach the surface of the underlying wafer. The ultrasonic or megasonic energy is transmitted from the transducer, 2_6 to the surface of the wafer 1_ by the chemical fluid 20032, the rotating plate 20008, and the chemical fluid 1032. An advantage of this embodiment is that the transducer 20006 is stationary, so there is no need to use a brush to introduce or output current to drive the transducer 20006. The pattern on the rotating plate 2〇〇32 is formed by a plurality of half cylinders. Figures fA and 21B illustrate another embodiment of the use of a wafer cleaning apparatus in accordance with the present invention. The illustrated embodiment is similar to the example of Figs. 20A and 20B in that a through hole 21009 is also distributed over the semicircular cylinder on the rotating plate 21008. The function of the through hole 21009 is to introduce the chemical fluid 21〇32 to the underlying wafer surface. Figures fA and 2 show an embodiment of the use of a wafer cleaning apparatus in accordance with the present invention. The illustrated embodiment is the same as the example of Figures 2A and 2B. 2 is a through-hole 22 in the groove between the semi-circular cylinders on the rotating plate 220A. The function of the via 22GQ9 is to introduce the chemical fluid 22032 to the underlying wafer surface. The shape of the rotating plate shown in the above embodiment is circular. However, as shown in Fig. 23A, the contour of the rotating plate may be triangular, and the shawl may be square as shown in Fig. 23B, or eight as shown in Fig. 23, or as shown in Fig. 23D. Oval. Figures 24A and 24C illustrate another embodiment of a crystal 200849359 circular cleaning apparatus using a rotating plate in accordance with the present invention. It includes a rotating plate 24008, a fixed ultrasonic or megasonic transducer 24006, a drive mechanism 24004 that drives the rotating plate 24008, a laterally moving guide 24002, a lateral drive mechanism 24000, and a nozzle 2412 for dispensing chemical fluid. Transducer 24〇〇6- and rotating plate 24008 are driven by lateral drive mechanism 24000 to be able to pass back and forth through the center of wafer 24010 in the lateral direction, as shown in Figure 24B. Alternatively, as shown in Fig. 24C, it is driven by the lateral drive mechanism 24000 to move back and forth in the lateral direction on the trace offset from the center of the wafer 24010. 〇 Figures 25A and 25B show another embodiment of a wafer cleaning apparatus using a rotating plate in accordance with the present invention. It includes a rotating plate 25008, a fixed ultrasonic or megasonic transducer 25006, a driving mechanism 25004 that drives the rotating plate 25008, a oscillating moving bar 25014, a oscillating drive mechanism 25016, and a nozzle 25012 for dispensing chemical fluid. As shown in Fig. 25A, the transducer 25006 and the rotating plate 25008 are driven by the swing driving mechanism 25016 to swing left and right through the center of the wafer 25010. Alternatively, as shown in Fig. 25C, it is driven by the swing drive mechanism 25016 to swing left and right on the curved trace of the center of the wafer 25010. Nozzle 25012 is disposed on wobble bar 25014, thereby causing the nozzle to oscillate with transducer 25006. With this arrangement, the chemical substance can be continuously transported into the space between the rotating plate 25008 and the wafer even if the rotating plate 25008 is swung left-right. • Fig. 26 shows another embodiment of a wafer cleaning apparatus using a rotating plate in accordance with the present invention. The embodiment is similar to the examples in Figs. 24A to 24C and Figs. 25A to 25' 'only the wafer 26010 and the rotating plate 26008 are arranged in the vertical direction of 14 200849359. FIG. 27 shows the use of the rotating plate according to the present invention. Another embodiment of a wafer cleaning apparatus. The examples are similar to those shown in Figure 26 except that the two sets of cleaning devices are simultaneously positioned on the front side and &amp; ... Item 28 shows another embodiment of the wafer of the present invention using a rotating plate. The examples are similar to those shown in Figure % except that there is an angle between the wafer 2卯1〇 and the cleaning apparatus that is between 9CM and 80 degrees. &amp; 29 29 shows another embodiment of the wafer cleaning apparatus using the rotating plate of the present invention. The embodiment is similar to those shown in Figure 27 except that there is an angle y between the wafer 29010 and the cleaning device that is between 0 and 90 degrees. Figure 30 illustrates another embodiment of a wafer cleaning apparatus using a rotating plate in accordance with the present invention. The embodiment is similar to those shown in Figure 24 except that the rotating plate 30008 and the transducer 30006 are placed on the back side of the wafer - 3〇〇1〇. ® shows another embodiment of a wafer cleaning apparatus using a rotating plate in accordance with the present invention. The embodiment is similar to those shown in Figure 30 except that a set of additional rotating plates 31008 and transducers 31 are placed on the front side of the wafer 31010. Figure 32 depicts the present invention. A complete and equivalent cleaning bite. The case where A is the overlap of the leading edge of the vibrating plate with the wafer at a particular moment t, 0 is the center of the plate, Point ^辰曰曰圆 or 1^ The distance between the items to be cleaned, 0 is the angle between the concave 彳15 200849359 wafer or the diameter of the item on the board. First, Bu: All The points can be cleaned by the board. The day 13 or the mouth of the object - the time of the plate, the distance of the plate should be smaller than the distance from the 0 day or the σ mouth along the wafer or The diameter of the item can therefore be derived from the plate v=2R2c〇l flat private k degree (lateral velocity) is: 60 Ο Ο In order to ensure the pureness of the upper fabric, when interested in the small area on the wafer or article 4 = Say, when the board rotates the bucket map = less spin - can also be set smaller than the board rhyme. The middle of the "〇 _ distance d will be able to find The conditions described need to be satisfied: The algorithm described in mi t above applies to the group input ^ = algorithm to calculate the effect on the χ axis and part of the X axis, such as the part marked by the red circle point Strong, Figure Γ, 1: 1: a system of control systems, which will be used by the system software; use two to allow the algorithm to come to Na #结t j5 A described - using the example algorithm of the present invention to calculate crystal An example of the result of a circular f-turn speed. As a solid-solid function of the center position of the plate, which satisfies the definition of the second plate to the second figure in the case of a fixed plate rotation speed and a variable plate translation speed 16 200849359 Equivalent cleaning effect. Table 37 describes an example of the results of an example calculation of the rotational speed using the present invention. Table 36 describes an example of the result of using the example algorithm of the present invention to calculate the spin I speed. A function of the mid-reading relative to the space satisfies the equivalent cleaning effect defined in the 2A S 2E in the case of the rotation speed of the crystal® and (4) the translational speed. The method is to calculate the plate rotation Ο as Wafer rotation speed and plate translation speed _ The functions which meet the full effect of the cleaning. 1A and 1B as defined in FIG.

The invention is described in terms of certain embodiments, examples, and applications, and various modifications and changes can be made without departing from the invention. For example, hydrofluoric acid can be combined with other salts and acids to form an electrolyte for the same purpose. Although the present invention has been described above by way of a preferred embodiment, it is not intended to limit the present invention, and those skilled in the art can make some modifications and refinements without departing from the spirit of the invention. The scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A-Β depicts an exemplary embodiment of a wafer cleaning apparatus. An exemplary embodiment of a wafer cleaning step is depicted in FIG. 2A-Ε. FIG. 3 depicts another example embodiment of a wafer cleaning apparatus. Figure 4 depicts another example embodiment of a wafer cleaning apparatus. Another example embodiment of wafer cleaning is described in Figures 5-5. Another example embodiment of wafer cleaning is described in Figures 6A-6B. 17 200849359

Illustrated Fig. 7A-7B depicts another example embodiment of a wafer cleaning apparatus. 8A-8B describe another example embodiment of a wafer cleaning apparatus. 9A-9B describe another example embodiment of a wafer cleaning apparatus. 10A-10B depict another example embodiment 11A-11B of a wafer cleaning apparatus depicting another example embodiment 12A-12B of a wafer cleaning apparatus that depicts another example embodiment 13A-13B of a wafer cleaning apparatus. Another example embodiment 14A-14B of a wafer cleaning apparatus describes another example embodiment 15A-15B of a wafer cleaning apparatus that describes another example embodiment 16A-16B of a wafer cleaning apparatus that describes a wafer cleaning apparatus. Another example embodiment 17A-17B depicts another example embodiment 18A-18B of a wafer cleaning apparatus. Another exemplary embodiment of a wafer cleaning apparatus is described. FIGS. 19A-19B depict another example embodiment of a wafer cleaning apparatus. 20A-20B depict another example embodiment 21A-21B of a wafer cleaning apparatus that depicts another example embodiment of a wafer cleaning apparatus 22A-22B that depicts another example embodiment 23A-23D of a wafer cleaning apparatus. Another example embodiment 24A-24C depicting a wafer cleaning apparatus describes another example embodiment 25A-25B of a wafer cleaning apparatus that describes another example embodiment 26 of a wafer cleaning apparatus that describes a wafer cleaning apparatus. Another example embodiment27 depicts another example embodiment of a wafer cleaning apparatus. 28 depicts another example embodiment of a wafer cleaning apparatus. Another exemplary embodiment of a wafer cleaning apparatus is described. 30 depicts another example embodiment of a wafer cleaning apparatus. 〇 〇 18 200849359 Figure 31 depicts another example embodiment of a wafer cleaning apparatus. Figure 32 depicts the situation in which the present invention can produce a complete and equivalent cleaning effect. Figure 33 depicts an algorithm of an example of the present invention. Figure 34 depicts a system of control systems of the present invention. Table 35 describes an example of the results of using the example algorithm of the present invention to calculate the rotational speed of the wafer.

Ο Table 36 describes an example of the results of using the example algorithm of the present invention to calculate the rotational speed of the panel. Table 37 describes an example of the results of using the example algorithm of the present invention to calculate the rotational speed of a panel. [Main component symbol description] 1004 Rotary drive mechanism 1008 Plate 1010 Wafer 1012 Nozzle 1032 Clean chemical or deionized water 2008 Wafer 2040 Channel 2042 Through hole 2044 Particle 3006 Transducer 3008 Rotating plate 3010 Wafer 19 200849359 3020 Base 3022, drive mechanism 3024 guide 3026 moving mechanism 3032 chemical fluid

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Claims (1)

200849359 X. Patent Application Range: 1. A device for cleaning a semiconductor substrate, comprising: a susceptor for supporting a semiconductor wafer; a board disposed adjacent to the semiconductor wafer and the semiconductor- ^ There is a gap between the wafers; and a drive mechanism that drives the plates to rotate about an axis perpendicular to the plates. 2. The apparatus for cleaning a semiconductor substrate according to claim 1, wherein the plate is positioned parallel to a surface of the wafer. P3. The method for cleaning a semiconductor substrate as described in claim 1, wherein the plate moves in a direction parallel to the surface of the wafer. 4. The semiconductor substrate for cleaning according to claim 3, wherein the plate moves along a straight line. 5. The #爹 for cleaning a semiconductor substrate as described in claim 3, wherein the plate moves along a curve. &lt;&lt;&lt;&gt;&gt;&lt;&gt;&gt;&gt;&lt;&gt;&gt;&gt; 7. The semiconductor substrate station # for cleaning as described in claim 6, wherein the substrate moves in a straight line. The apparatus for cleaning a semiconductor substrate as described in claim 3, wherein the substrate moves along a curve. The method for cleaning a semiconductor substrate according to the first aspect of the invention, wherein the substrate is rotated around a center of the wafer. The apparatus for cleaning a semiconductor substrate according to claim 1, wherein the interval between the board and the substrate is between mm and 毫米 mm. The device for cleaning a semiconductor substrate according to claim 1, wherein the device further comprises a nozzle for transporting a chemical fluid on the surface of the wafer. 12. The apparatus for cleaning a semiconductor substrate according to claim 7, wherein the nozzle is connected to the board. 〇13. The I for cleaning a semiconductor substrate according to claim 1, wherein the surface of the plate is a flat surface. 14. The apparatus for cleaning a semiconductor substrate according to claim 1, wherein the surface of the board is formed by a plurality of semi-pillars. The device for cleaning a semiconductor substrate according to claim 1, wherein the surface of the plate is formed by a plurality of triangular cylinders. The device for cleaning a semiconductor substrate according to claim 1, wherein the surface of the plate is formed of a plurality of rectangular cylinders. Q 1 is the apparatus for cleaning a semiconductor substrate as described in claim 1, wherein the surface of the plate is formed of a plurality of elliptical cylinders. 18. The apparatus for cleaning a semiconductor substrate according to claim 1, wherein the surface of the board is formed by a single concave cylinder. The nipple for cleaning a semiconductor substrate, as described in claim 1, wherein the surface of the plate is formed by a single convex cylinder. 20. The apparatus for cleaning a semiconductor substrate according to claim 1, wherein the surface of the plate is formed by a concave cylinder and a convex 22 200849359 cylinder. The device for cleaning a semiconductor substrate according to claim 1, wherein the surface of the plate is formed of a plurality of hemispheres. The device for cleaning a semiconductor substrate as described in claim 1, wherein the surface of the plate is formed by a plurality of pyramids. The apparatus for cleaning a semiconductor substrate according to claim 1, wherein the surface of the board is formed of a plurality of semi-octagonal cylinders. The apparatus for cleaning a semiconductor wafer according to claim 1, wherein the apparatus further comprises a mechanical wave transducer coupled to the panel. 25. The apparatus for cleaning a semiconductor substrate according to the application of the patent specification Hf 24, wherein the transducer is an ultrasonic transducer having a frequency of 2 〇 ^ ^ ^ to 2 〇〇 k ^. The apparatus for cleaning a semiconductor substrate according to claim 24, wherein the transducer is a megasonic transducer having a frequency of 2 〇〇 to 2 。. Cj 27. The apparatus for cleaning semiconductor bases as set forth in claim 1 wherein said apparatus further comprises a non-rotating mechanical i, said transducer and said The boards are installed separately. The garment for cleaning a semiconductor base as described in claim 27, wherein the transducer has a through hole for introducing a chemical fluid between the transducer and the plate. Within the interval. A device for cleaning a semiconductor substrate as described in claim 1 of the invention, wherein the plate has a plurality of chemical fluids. 23 200849359 3. The apparatus for cleaning a semiconductor substrate as described in claim 1, wherein the plate has a circular outline. A device for a soil panel, wherein the panel has a polygonal profile. 32. A device for cleaning a semiconductor substrate, such as mt1/(4), wherein the plate has a rectangular outline. 33. Apparatus for cleaning a semiconductor substrate as claimed in the application, wherein the panel has an octagonal profile. 34. The device for cleaning a semiconductor slab of claim 1, wherein the plate has an elliptical profile. Earth 35. The apparatus for cleaning a semiconductor substrate, wherein the substrate is disposed in a horizontal direction, as described in the above item (4). 36. The apparatus for cleaning a semiconductor substrate according to claim 1, wherein the substrate is disposed in a vertical direction. The apparatus for cleaning a semiconductor substrate according to claim 1, wherein the substrate has an angle with respect to a horizontal direction, and the two angles are between 0 and 90 degrees. 38. The device for cleaning a semiconductor substrate according to claim 1, wherein the plate is disposed above a surface of the substrate. 39. The device for cleaning a semiconductor substrate of claim 1, wherein the plate is disposed below a surface of the substrate. 40. The device for cleaning a semiconductor substrate according to claim 1, wherein the device further comprises another plate, wherein one plate is disposed above the surface of the substrate and the other plate is not disposed Substrate surface 24 below 200849359. 41. The apparatus for clearing a pot description as described in claim 4, further comprising two nozzles i&quot; for transferring the ▲ body, wherein one nozzle is disposed above the surface of the substrate The nozzle is disposed below the surface of the substrate. 42. The device for a Ο U-plate as described in claim 5, wherein the plate and the wafer satisfy the following conditions: a = 2 or an interesting small area on the article is in the panel = The diaphragm is rotated at least π. < 叫 所述 所述 所述 所述 所述 Γ Γ Γ 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 专利 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗 清洗χ-Κ2)3χηωιΑί)2 &lt;R22 ; ^ · where d is the distance from the point on the wafer that overlaps the leading edge of the vibrating plate to the center of the plate at a particular time t in the direction of plate movement V is the plate = the translation speed of the diameter of the wafer or article; &amp; is the radius of the wafer, the angular velocity of the Wi-plate and the % is the angular velocity of the wafer. 44. A method for cleaning a semiconductor substrate, comprising: supporting a semiconductor wafer; placing a plate adjacent to the semiconductor wafer, and having a space between the plate and the semiconductor wafer; Driving the plate to rotate about an axis perpendicular to the plate; moving the plate in a direction parallel to the semiconductor wafer; transferring chemical fluid to a surface of the wafer. 45. A method for cleaning a semiconductor substrate, comprising: 25 200849359 supporting a semiconductor wafer; said semi-twisted approaching board, and connecting said board to said board - super: skin or mega Acoustic wave transducer; the water, the skin trt moves the plate and the Zhao Er wave or megasonic transducer in the direction of the semiconductor wafer; the frequency plate and the ultrasonic or megasonic transducer to surround the vertical Rotating on the axis of the plate; Ο ί:- transferring chemical fluid to the surface of the wafer. 'Includes: and supports the board and the method for cleaning the semiconductor substrate to support a semiconductor wafer; placing a board adjacent to the semiconductor wafer, and having a space between the semiconductor wafers; , placing - an ultrasonic money acoustic transducer close to her, and having a gap between the plate and the ultrasonic or megasonic transducer · moving in a direction parallel to the semiconductor wafer: 'ultrasonic Or a megasonic transducer; ^ driving the plate to circulate chemical fluid to the surface of the wafer about an axis perpendicular to the plate. ’ 26