200847616 九、發明說明： 【發明所屬之技術領域】 本發明係提供一種電壓位移掇 _祕移她，尤指一種可用於使用不同 偏£之硬數種輸出人裝置的二段式電壓位移模組。 【先前技術】 隨著積體電路的發展’在積體電路的製程中，積體電路之體 積大小正逐雜下探底，因此使用於積體電路的偏壓也必須要 應體積大小逐漸遞減的製程而同步縮減。在這樣的趨勢之下，以 具有較小偏壓之賴電路鱗與聯繫具有較高偏 :猶越多，然而，這些外接裝置通常不會隨著積體電路製： 的减減4其偏壓，或是跟不上積體電路製程遞減偏壓的腳步。 此類的外接裝置係包含了一般的輸出入，1/〇)裝置。 如以上所述，奸接以具有較低偏壓的積體電路來驅動盘聯繫旦 有較南偏壓之外接裝置時，以—般的手段是無法糊運作的 了解決這__ ’在先前技射會在龍電路㈣外設置電墨 位移電路’以將積體電路較小的偏壓轉換為適合外接裝置的較古 偏壓來操作外接裝置。 巧 然而’這樣的電壓位移電路也帶來了新的問題。首先 積體電路在製程上獨_小其_，频電路包含之 = 效電晶體中閘極氧化層的厚度也賴步遞減，並造朗極電壓: 上限也逐漸降低’此_超過上限賴極賴會服金氧半場效 5 200847616 二之二閘極氧化層朋潰(gate°xidebreakd°wn)的發生。再者’上 =位移電路實質上只是提高了積體電路偏壓範圍的上限， 而亚》又有對偏壓範_下限做更動，換言之 ： 位邏輯1所代表的 # 竭&補/、有數 有任_ 級同’但數倾輯G所代表的電壓並沒 1 8伏特^舉例來况’將積體電路原本的偏壓範圍為0伏特至 厂<由/Γ 伏特至3.3伏特，射數位邏輯1所代表的電 ^的·ri提升至3.3伏特以適麟接裝置，且數位糖〇所代 Θ 〇伏特 '然而’當積體電路之偏μ範圍提升時，會 ^ Ά 3之i氧半場效電晶體的離與源極紐差極易造成閘 乳化^潰的縣，並造成_氧化層的永久性翁。因此可 知，先喊術在積體電路内設置位移電路的作法仍然有需要 改進的必要。若以G·18微米製程下的金氧化電晶體而言，3.3伏特 的電壓差相當容易導致閘極氧化層崩潰的現象。 π參㈣1圖’其為—種先前技術中可增加電壓範圍上限之 電壓位移電路⑽的示意圖。如第1圖所示，電壓位移電路100 係匕3反邏輯私放大⑴2，—第—Ν型金氧半場效電晶體 104第一_金氧半場效電晶體廳，—第α型金氧半場效 電晶體108，-第四Ν型金氧半場效電晶體11〇，一第一 ρ型金氧 ^場，電晶體112 ’以及-第二Ρ型金氧半場效電晶體114。反邏 輯運算放大a 1〇2之正偏壓端係轉接一電壓源VDD卜負偏壓端 係接地’且輸入端係減於一訊號源In_。訊號源邮饥之電壓 大小係在接地與電壓源VDD1 _位之間。第—N型金氧半場效 200847616 電晶體綱之間極係耦接於反邏輯運算放大器ι〇2之輸 源極接地。第二N型金氧半場效電晶體娜之間極_接 源_(，且源極接地。第^型金氧半場效電晶體 ，购= =雜D2。㈣_侧橡嫩购 h乳+_電日日體觸之祕，且閘極係耦接於第三 半場效電晶體10_極。第一 p型金氧半場效電晶體112之、Γ 氧半場效電晶體11〇之汲極，且源極係耗接於一電壓 源™〇。電壓源VDDI0之電位係高於電壓源v咖。第二p 型金氧半場效電晶體114之汲極_接於細N型 晶體則之沒極，閘極_接於第U型金氧半場效電晶體10= 之没極，且源極係耦接於電壓源VDDI0。 電壓位移電路刚主要係用來以將訊號源:[啊所輸入的電壓 限提向來增加訊號源响所輸入的電壓範圍。在第工圖中敘述 電壓位移電路刚的運作方式時，係假設電壓源VDD1之電位為 1.0伙特，電壓源VDD2之電位為2 5伏特，電壓源職〇之電 位為3.3伏特’且訊號源与ut係輸入電位介於〇伏特幻〇伏特 之間的訊肋輸人數位邏輯為〇或丨的訊號。反邏輯運算放大哭 搬藉由偏蜃於〇伏特(即接地端)與電壓源㈣切之間，將所輸出 之電壓可完整的拉高至1X)伏特或是降低至q伏特，其中反邏輯運 200847616 . 算放大器102可視為以一運算放大器外接一反向器(inverter)來實200847616 IX. Description of the invention: [Technical field of the invention] The present invention provides a voltage displacement 掇 _ _ secret, especially a two-stage voltage displacement module that can be used for different types of output devices . [Prior Art] With the development of the integrated circuit 'In the process of the integrated circuit, the volume of the integrated circuit is smashing down, so the bias voltage used in the integrated circuit must also gradually decrease in size. The process is synchronized and reduced. Under such a trend, the circuit scales and contacts with a lower bias have a higher bias: more and more, however, these external devices usually do not follow the integrated circuit: Or can't keep up with the steps of the integrated circuit process to reduce the bias voltage. This type of external device contains a general input/output, 1/〇 device. As described above, when a patch circuit with a lower bias voltage is used to drive the disc to contact the device with a south bias bias, the general method cannot be used to solve the problem __ 'in the previous The ejaculation will set an electro-ink displacement circuit outside the dragon circuit (4) to convert the smaller bias voltage of the integrated circuit into an older bias suitable for the external device to operate the external device. However, such voltage displacement circuits have also brought new problems. First, the integrated circuit is unique in the process, and the frequency circuit contains the voltage of the gate oxide layer in the effect transistor. The thickness of the gate oxide layer is also reduced, and the voltage is increased. The upper limit is also gradually reduced. Lai will serve the golden half-field effect 5 200847616 Two of the gates of the oxide layer (gate°xidebreakd °wn). Furthermore, the 'up=displacement circuit only increases the upper limit of the bias range of the integrated circuit, and the sub-" has a change to the bias voltage lower limit, in other words: the bit logic 1 represents the # exhaust & There are several _ grades with the same number but the voltage represented by G is not 1 8 volts. For example, the original bias voltage of the integrated circuit is 0 volts to the factory < / / volts to 3.3 volts, The ri of the electric ray represented by the digital logic 1 is raised to 3.3 volts to be connected to the device, and the digital sputum is replaced by volts. However, when the partial μ range of the integrated circuit is increased, it will be Ά 3 The ionization and source of the i-oxygen half-field effect transistor is very easy to cause the emulsification of the county, and causes the permanent _ oxide layer. Therefore, it is known that there is still a need to improve the practice of setting the displacement circuit in the integrated circuit. In the case of a gold oxide crystal in the G·18 micron process, a voltage difference of 3.3 volts is quite likely to cause a breakdown of the gate oxide layer. π ( (4) 1 ′′ is a schematic diagram of a voltage shift circuit (10) in the prior art which can increase the upper limit of the voltage range. As shown in Fig. 1, the voltage shift circuit 100 is 匕3 anti-logic private amplification (1) 2, - the first Ν type MOS half field effect transistor 104 first _ gold oxygen half field effect transistor hall, - α type gold oxygen half field The effect transistor 108, the fourth Ν type gold oxide half field effect transistor 11 〇, a first ρ type gold oxide field, the transistor 112 ' and the second Ρ type gold oxide half field effect transistor 114. The anti-logic operation amplifies the positive bias terminal of a 1 〇 2 to a voltage source VDD, the negative bias terminal is grounded, and the input terminal is reduced to a signal source In_. The voltage of the signal source is between the ground and the voltage source VDD1 _ bit. The first-N-type gold-oxygen half-field effect 200847616 The poles of the transistor are coupled to the source of the inverse logic operational amplifier ι〇2. The second N-type gold-oxygen half-field effect transistor Na is connected to the source _ (and the source is grounded. The second type of gold-oxygen half-field effect transistor, purchase = = miscellaneous D2. (4) _ side oak tender purchase h milk + _ electricity day and body touch secret, and the gate is coupled to the third half field effect transistor 10_ pole. The first p-type gold oxygen half field effect transistor 112, Γ oxygen half field effect transistor 11 〇 bungee And the source is consumed by a voltage source TM. The potential of the voltage source VDDI0 is higher than the voltage source v. The drain of the second p-type gold-oxygen half-effect transistor 114 is connected to the fine N-type crystal. Nothing, the gate _ is connected to the U-type MOS half-effect transistor 10=, and the source is coupled to the voltage source VDDI0. The voltage displacement circuit is mainly used to signal source: [ah The input voltage limit is added to increase the voltage range input by the signal source. When the operation mode of the voltage shift circuit is described in the figure, it is assumed that the potential of the voltage source VDD1 is 1.0 plex, and the potential of the voltage source VDD2 is 2. 5 volts, the potential of the voltage source is 3.3 volts' and the signal source and the ut input potential are between the volts and the volts. 〇 or 丨 signal. The inverse logic operation is amplified by the bias between the volts (ie ground) and the voltage source (four), the output voltage can be fully raised to 1X) volts or reduced to q volts, where the inverse logic is 200847616. The amplifier 102 can be regarded as an external amplifier connected to an operational amplifier.
施’以將高電位的電找全轉為低電位的電壓，或是將低電位的 電壓完全轉為高電位的賴，此係為了可以清楚辨識輕代表高 電位或是低電位的作法，故不再加以贅述。電壓位移電路觸之 運作方式係如以下所述：當訊號源邮说輸入數位邏輯為i的訊號 時，第-N型金氧半場效電晶體綱之閘極係處於低電位，且第L - N型金氧半場效電晶體廳之閘極係處於高電位，因此第一 n 型金氧半場效電晶體1〇4會處於關閉狀態，且第型金氧半場 效電晶體106會處於開啟狀態。由於電壓源VDD2係減於第三 N型金乳半場效電晶體應與第四N型金氧半場效電晶體則的 閘極’因此第三N型金氧半場效電晶體1〇8與第四n型金氧半場 效電晶體110會持續處於開啟狀態，且藉由電壓源奶说的偏壓穷 可拉高tN型金氧半場效電晶體刚與第哺型金氧半場效電 200847616 p”:與B+之間的電位差即為輸立移電路應的輸 圍。财，藉_接於第一 p型金氧半場效電晶體m與第二P 2乳半場效電晶體114的源極之源_◦的齡可使得 賴Γ於0伏特與電屢源VDD1之電位之間的電愿範圍增加到〇 1犬特與賴源VDDI〇之電位之間。以上述_子來說，麵範圍 由〇至1 .〇伏特被拉高到〇至3 3 # ϋ妙 1至3,3伙特。然而，誠如之前對閉極氧 ㈤船貝的敘述，當第一 ρ型金氧半場效電晶體112與第二 孟氧半％效電晶體1 η其中之一帶有了 3 3伏特的源極電壓與〇伏 特的閘極電壓時’亦即承受了 3 3伏特的源極與閘極電壓差時，極 有可能發生上獅祕氧化區麟現象，崎成⑼ 電晶體的永久_壞’也造成_ Α+_+的躲無法正確2 數位邏輯〇與1的狀況。 又 在先前技術中，也有直接將兩組同樣的賴偏移電路互接以 提供較大細且安全之輕範_做法，但是這樣—來勢必也須 要增加積體電路巾光罩的數量絲少原先的兩倍，因此會增加積 體電路的生產成本，並大幅增加髓電路本身的體積。 【發明内容】 本發明係提供-種可·使用不同偏壓之複數種輸出入裝置 的二段式電壓位賴組。該二段式電壓轉她包含-第—級電 ，位移電路、—第—電壓源、一第二電壓源、—第三電壓源、— 弟-ρ型錢半場效型錢半場效電晶體、以 200847616 及一第二級電愿位移電路。 位移電路之-第-電源輪入:第該第-級電麼 ，源之電位，並输於料__ ==於該第 電㈣。該第二p型金氧：1^=^源極_接於該第三 C源，雜係_於該第—p型金 :弟二電 極餘接於該第- P型金氧半場效電=體之閘極，且閑 位移電路包含-第三p型金氧 ^ ,極。4第二級電壓 玉金虱半％效電晶體、一 八一 場效電晶體、—第P型金氧半場效電晶體、-第^型1!^ 場效電晶體、-第—N型金氧 、㈣半 場效電晶體、一第七P型全氧一弟二_金氧半 玉金虱牛％效電晶體、以及一 氧半場效電晶體。該第三p型全氧 該第-㈣金氧半場效電體之秘係輕接於 曰體之_# Β _ H第四Ρ型金氧半場效電 日日體之源極係她於該第二”金氧半場效電晶體之沒極。 五Ρ型金乳+場效電晶體之間極係轉接於該第三 電晶體之雜，雜係祕_第二ρ型錄杨 極，且汲極係输於該第-電壓源。該第六ρ型金ς文， #一二 氧半場效電晶體之閘極，且汲極係輕接於該 弟电[/原„亥第一 N型金氧半場效電晶體之源極係輕接於該第 五P型金氧半場效電晶體之汲極，閘極_接於該第—級電壓位 移電路之—第—訊錄出端’且汲極係祕於該第三p型金氧半 200847616 麥效電晶體之間極。該第工㈣金氧半場效電晶體之源極係 於，第六1>型金氧半場效電晶體之汲極，閘極係輪於該第一級 電屢位移電路之一第二訊號輸出端，且汲極係輕接於該第四P型 金氧半場效電晶體之_。該壯p型錄半場效電晶體之間極 ^馬接於該第-N型金氧半場效電晶體之_，汲極_接於該 ’ ^型金氧半場效電晶體之汲極’且雜軸接於該第二電麼 ，、，《亥第八P型金氧半場效電晶體之閘極絲接於該第二N型金 氧半场效電晶體之祕’其汲極係她於該第二^型金氧半場效 電晶體之汲極，且源極係耦接於該第二電壓源。 【實施方式】 因此，本發明係提供-種二段式電壓位移模組，以解決先前 ，術中當《範_大時引起金氧半場效電晶體發生閘極氧化區 朋潰的現象之問題。本發騎提供之二段式賴位雜組所使用 的技巧為將第1圖中先前技術所揭露之可增加電壓範圍上限之電 壓位移電路另外再加上-級光罩較少的電壓轉電路，以提高上 述電壓範圍中低電位的下限，避免社的電壓差造成閘極氧化區 崩潰的現象，其中先前技術所揭露之電壓位移電 級電壓位移電路，且糾力吐的賴位移電路可視為—第二級電 壓位移電路。 請參閱第2圖，其為本發明所揭露之二段式電壓位移模組測 的示意圖。二段式電壓位移模組2〇〇係包含一第一級電壓位移電 200847616 路202與一第二級電龜移電路2〇4。請注意，在第頂中，為了 避免線路父錯造成閱讀不易，因此二段式電麗位移模組中部 二的麵接方式會以節點的方式表示。舉例來說，所有標為^^的 節點之間係保有互相輕接的關係，因此所有標為姆的節點之電 位皆_，且此點對於第2圖中所示之其他節點也是相同，以避 免線路交錯造成第2圖在上造成縣H輕位移電路 202大致上的結構與第1圖所示之電驗移電路卿大致上相同， 但仍存在有部分不同處。第一級驟位移電路搬之詳細結構將 於之後再述。 在二段式電壓位移模組綱中，第—P型金氧半場效電晶體 210之源極係輸於電壓源VDDI〇。第二p型金氧铸效電晶體 212之源極係麵接於電壓源VDDI〇，其汲極係祕第一 p型金氧 半場效電晶體210之閘極’且其閘極係搞接於第一 p型金氧半場 效電晶體210之汲極。 第二級電壓位移電路204係包含第三p型金氧半場效電晶體 第四卩型金氧半場效電晶體m、第九N型金氧半場效電晶 體叫、第十N型金氧半場效電晶體挪、第五p型金氧半場效電 晶體22卜第六P型金氧半場效電晶體223、第一 n型金 電晶體222、第二N型金氧半場效電晶體224、第七p型金氧半二 效電晶體226、第八P型金氧半場效電晶體挪、第五n型金氧Z 場效電晶體230、第六N型金氧半場效電晶體232、第七㈣金 12 200847616 .體a、第八N型金氧半場效電晶體236、第九N 1金乳半~效電晶體238、虚第+ N刑入产 三P型金氧半射電曰俨〖孟巩半場效電晶體240。第 _ 4之源極係耦接於第—p型金氧半場 效電晶體210之汲極。第四？ h虱杨 耦接於筮一 D… 金杨效電晶體216之源極係 =ί-Ρ型金氧半場效電晶_之汲極。第五P型金氧半 12日日Γ221之閘極係搞接於第三ρ型金氧半場效電晶體214 2極，其源極係墟於第二Ρ型金氧半場效電晶體212之間極， 接於電壓源侧。第六ρ型金氧半場效電晶物 之間極係耦接於第四Ρ型金氧半 ___ Ρ S體216之汲極，其源極 2料P型金料場效電晶體21〇之難，且其沒極_ 、源VDm。第九N型金氧半場效電晶體218之汲極係輕 t第三p型金氧半場效電晶體214之汲極，且其細_於 賴源VDD2。第十N型金氧半場效電晶體細之汲極_接於 Ϊ至氧半場效電晶體加之汲極，且其閘極係轉接於第九 N型金氧半場簡晶體218之·。第—n型金氧半場效電晶體 22^之源極_接於第五p ^金氧半場效電晶體功之沒極，其閉 極係經由節點AAA搞接於第-級電壓位移電路搬之一第一訊號 ^出端’且其汲極係經由節點BB搞接於第三P型金氧半場效電° 晶^14之閘極。第二N型金氧半場效電晶體224之源極係麵接 於第^、P型金氧半場效電晶體2幻之汲極，其閘極係經由節點BBB 轉接於第-級電壓位移電路2〇2之一第二訊號輸出端，且其沒極 係經由郎點AA輕接於第㈤p型金氧半場效電晶體训之閑極。 第七P型金氧半場效電晶體226之閘極_接於第—N型金氧半 13 200847616 .f效電晶體222之閘極’其汲極係_於第-n型金氧半場效電 二體222之沒極，且其源極係麵接於電壓源肩加。第八p型金 乳半场效電晶體228之閘極係轉接於第型金氧半場效電晶體 224之閘極’其汲極係搞接於第1型金氧半場效電晶體故之 及極，且其源極_接於電壓源VDD2。第五n型金氧 晶體230之閘極係經由節點B _於第二p型金氧半場效電晶體 2U之及極，其源極係輕接於第型金氧半場效電晶體功之汲 .，，且其汲極係耦接於第二p型金氧半場效電晶體212之閉極。 尘i氧半場效電晶體232之閘極係經由節點a柄接於第一 ^型金氧半場效電晶體21〇之汲極，其源極_接於第六p型全 虱+場效電晶體2M之汲極，且其汲極係耦接於第一p型金 場效電晶體210之間極。第^型金氧半場效電晶體说之閉極 係轉接於電壓源VDD2，且其汲極係耦接於第二卩型金氧 ="2之問極。，八_半場效電晶體—係輛 、’七N·乳半場效電晶體234之源極，其閘極係 咖输於第—級種位移電路加之第二訊號輸出端，且_ 蝴馬接於第五1>型金氧半場效電晶體功之汲極。第九N型全 :半場效電晶體挪之汲極軸於第一 p型金氧半場效電晶體 ㈢之閉極，且其間極係輕接於電壓源Vdd2。第十N型金 場效電晶體240之汲極係轉接於第九N型金氧半場效電晶體现 之，極，其間極係經由節點AAA轉接於第一級電虔位移電路搬 =第减輸出端，且其源極係轉接於第六p型金氧半場效電晶 之汲極。請注意，節點A與節點B係為二段式糕位移模 14 200847616 組200之訊號輸出端，用來輸出將訊號端Inpm輸入之電壓範圍放 大以後的數位訊號。 第一級電壓位移電路202係包含一反邏輯運算放大哭2幻、一 第九P型金氧半場效電晶體248、一第十p型金氧半場二電晶體 250、一第十一 N型金氧半場效電晶體244、與一第十二n型金氧 半場效電晶體246。反邏輯運算放大器242之第—電壓輸入端= 接於電壓源VDD卜且其帛二電壓輸人祕接地κ得反邏輯 運算放大器242可偏壓於接地端與電壓源VDD1之間的電壓範 圍。第十-N型金氧半場效電晶體施之閘極軸接於反=運 鼻放大器242之輸出端，其源極係接地，且其汲極係藉由節點偷 輕接於第-級電壓位移電路2〇2之第一訊號輸出端。第十二N型 金氧半場效電晶體246 ’其閘極係耦接於反邏輯運算放大器如 之輪入端’其源㈣接地，且其汲極係藉㈣點咖_於第一 ，電壓位移電路搬之第二訊號輸出端。第九p型金氧半場效電 晶體⑽之源極_接於賴源VDD2，其間極_於第十二N 型金乳半場效電晶體2你之汲極，且其汲極係耦接於第十—n型 金氧半場效電晶體244之汲極。第十p型金氧半場效電晶體25〇 之雜係柄接於電壓源VDD2 ’其閘極_接於第十一 N型金氧 半％效電晶體244之汲極，且其汲極係麵接於第十二n型 場效電晶體246之汲極。 ” 電 二段式電·移模組另包含—料三N 氧半場效 15 200847616 f曰體252與一第十四N型金氧半場效電晶體254。第十三N型金 =半252之源極軸接於第十__ N型金氧半場效電晶 體244之源極，其_係藉由節點bbb耦接於第一級電麗位移電 路2〇2之第二訊號輸出端，且其汲極係轉接於第九n型金氧半場 效電晶體218之源極。第十㈣型金氧半場效電晶體254之源極 係输於型金氧半場效電晶體μ6之源極，其閘極係藉 由節點AAA搞接於第一級龍位移電路2〇2之第一訊號輸出端， 且其汲極係耦接於第十N型金氧半場效電晶體22()之源極。 二段式電壓位移模組20㈣運作方式係敘述如下：#訊號源 I叩m處於高電位時’第十-N型金氧半場效電晶體撕會處於關 閉狀態’且第十二N型金氧半場效電晶體246會處於開啟狀態， 使得節點AAA的電位因為第十—N型金氧半場效電晶體施沒 有電流通過而不致由電魏VDD2的電赌落太多，換言之節點 AAA此時係處於高電位；而節點bbb的電位會因為第十二N型 金氧半場效電晶體246有電流通過而由電壓源vdD2的電位大幅 滑落’因此此時節點BBB係處於低電位。此時在電壓源vdD2 I 偏壓下，原本電壓範圍處於〇伏特至電壓源VDD1之電位之間的 訊號源Input，其電壓範圍會在節點AAA與bbb轉換為落在〇伏 特與電壓源VDD2之電位之間。接著’在節點aaa之高電位與節 點BBB之低電位下，第七P型金氧半場效電晶體226會處於關閉 狀態，第一 N型金氧半場效電晶體222處於開啟狀態，第八p型 金氧半場效電晶體228會處於開啟狀態，第二n型金氧半場效電 16 200847616 .日日體224冑於關閉狀悲’第型金氧半場效電晶體236會處於 關閉狀態’第十Ν型金氧半場效電晶體24〇會處於開啟狀態，第 十二Ν型金氧半場效電晶體252會處於關閉狀態，且第十四ν型 金氧半場效電晶體254會處於開啟狀態。此時，因為第七ρ型金 氧半場效電晶體226處於關閉狀態，且第三？型金氧半場效電晶 體222處於開啟狀態，因此節點ΒΒ的電位會被大幅拉低至低電 位:同理，因為第八!>型金氧半場效電晶體现處於開啟狀態， " 且第型金氧半場效電晶體似處於關閉狀態，因此節點从 的電位會維持在接近於電壓源VDD2之高電位。由於節點ΑΑ係 處於高電位，且節點BB處於低電位，因此第王卩型金氧半場效 電晶體2=處於開啟狀態，且第四？型金氧半場效電晶體加處 於關閉，態。然而因為第十三N型金氧半場效電晶體Μ2會處於 關閉狀態，且第十四N型金氧半場效電晶體254會處於開啟狀態， 口此第十Ϊ~Ν型金氧半場效電晶體252沒有電流通過，且第十四 二型金氧半場效電晶體254會有電流通過，並連帶使得第三ρ型 金乳半場效電晶體214的通過電流較小，且第izgp型金氧半場效 電晶體216有較大電流通過。此時，第三P型金氧半場效電晶體 及極的電位會較接近其源極的電位，也就是接近電壓源 —的電位’並使得第五P型金氧半場效電晶體221關閉，因 此第- P型金氧半場效電晶體21()之汲極的電位(亦即節點A的電 位)曰會接近於電壓源VDDI〇的電位；同理，第四p型金氧半場效 faa體216之&極的電位會被通過的電流拉低，使得第六ρ型金 .乳半場效電晶體223進入開啟狀態，並拉低第二1>型金氧半場二 17 200847616 .電晶體212之汲極的電位(亦即節點B的電位） 電位係處於高紐，且節 α此即點A的Shi's use to turn the high-potential electric power into a low-potential voltage, or to turn the low-potential voltage into a high-potential voltage. This is to clearly recognize that the light represents a high potential or a low potential. I will not repeat them. The operation mode of the voltage displacement circuit is as follows: when the signal source is said to input the signal whose logic is i, the gate of the first-N-type gold-oxygen half-effect transistor is at a low potential, and the L-th The gate of the N-type gold-oxygen half-field transistor hall is at a high potential, so the first n-type gold-oxygen half-field effect transistor 1〇4 will be in a closed state, and the first-type gold-oxygen half-field effect transistor 106 will be turned on. . Since the voltage source VDD2 is reduced to the gate of the third N-type gold half-field effect transistor and the fourth N-type gold-oxygen half-field effect transistor, the third N-type gold-oxygen half-field effect transistor 1〇8 and the The four n-type gold-oxygen half-field effect transistor 110 will remain in the on state, and the bias source can be pulled up by the voltage source milk. The tN-type gold-oxygen half-field effect transistor is just the same as the first-feed type gold-oxygen half-field effect power 200847616 p ”: The potential difference between the B+ and the B+ is the input of the vertical transfer circuit. The source of the first p-type MOSFET and the source of the second P 2 1/2 field-effect transistor 114 The source _ ◦ 可 可 可 可 可 可 可 可 可 可 可 可 Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ Γ 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可 可The range is from 〇 to 1. The volts are pulled up to 33 3 #ϋ妙1 to 3,3 。. However, as in the previous description of the closed-pole oxygen (five) boat, when the first ρ-type oxy-half When one of the effect transistor 112 and the second Meng oxygen half-effect transistor 1 η has a source voltage of 33 volts and a gate voltage of 〇V, it is subjected to 3 3 volts. When the voltage difference between the pole and the gate is very high, it is highly probable that the lion's oxidized zone will occur. The permanent _ bad' of the singular (9) transistor also causes _ Α + _ + to hide correctly 2 digital logic 〇 and 1 condition. In the prior art, there are also directly connecting two sets of the same offset circuits to provide a larger and safer lighter method, but in this case, it is necessary to increase the number of integrated circuit wipers. It is twice as large as before, so the production cost of the integrated circuit is increased, and the volume of the medullary circuit itself is greatly increased. SUMMARY OF THE INVENTION The present invention provides a two-stage type of a plurality of input and output devices that can use different bias voltages. The voltage is placed in the group. The two-stage voltage turns to include - the first level electric, the displacement circuit, the - the first voltage source, the second voltage source, the third voltage source, the younger-p type money half-time effect money Half field effect transistor, with 200847616 and a second stage electric shift circuit. Displacement circuit - the first power supply wheel: the first stage electric, the source potential, and the material __ == Electric (four). The second p-type gold oxygen: 1 ^ = ^ source _ connected to the third C source, Miscellaneous _ in the first-p-type gold: the second electrode of the second is connected to the gate of the first-P-type MOS field, and the idle-displacement circuit includes - the third p-type gold oxide ^, the pole. The second-level voltage jade gold 虱 half-effect transistor, one-eighth effect transistor, - P-type gold oxygen half-field effect transistor, - ^ type 1! ^ field effect transistor, - first - N gold Oxygen, (four) half-field effect transistor, a seventh P-type all-oxygen one-two-two-oxygen semi-jade gold yak% effect transistor, and one oxygen half-field effect transistor. The third p-type oxy-enrichment-(four) gold The secret of the oxygen half-field effector is lightly connected to the body _# Β _ H The fourth type of gold-oxygen half-field electric power source of the Japanese body is in the second "gold oxide half-field effect transistor" . The poles of the five-type gold milk + field effect transistor are transferred to the third transistor, and the second phase is recorded, and the drain is transmitted to the first voltage source. The sixth p-type ς ς , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Lightly connected to the drain of the fifth P-type MOS field-effect transistor, the gate _ is connected to the first-stage voltage displacement circuit - the first recording terminal and the drain is secreted to the third p-type The gold oxide half 200847616 is the pole between the wheat effect electric crystal. The source of the fourth (4) gold-oxygen half-field effect transistor is tied to the buckle of the sixth 1> type gold-oxygen half-field effect transistor, and the gate is the first One of the first-stage electric-displacement circuits has a second signal output end, and the drain-pole is lightly connected to the fourth P-type gold-oxygen half-field effect transistor. The strong p-type recorded half-field effect transistor is connected to the pole In the first-N-type gold-oxygen half-field effect transistor, the drain is connected to the drain of the '^-type gold-oxygen half-field effect transistor, and the miscellaneous axis is connected to the second electrode, The gate wire of the eight P-type gold-oxygen half-field effect transistor is connected to the second N-type gold-oxygen half-field effect transistor, and its bungee is the bungee of the second-type gold-oxygen half-field effect transistor. And the source is coupled to The second voltage source. [Embodiment] Therefore, the present invention provides a two-stage voltage displacement module to solve the problem of the gate oxidation region of the gold-oxygen half-effect transistor caused by the "Wang_large time" during the operation. The problem of the phenomenon. The technique used by the two-stage type of miscellaneous miscellaneous group provided by the present ride is to add a voltage-displacement circuit that can increase the upper limit of the voltage range disclosed in the prior art in FIG. A small voltage-to-circuit circuit is used to increase the lower limit of the low potential in the above voltage range, thereby avoiding the phenomenon that the gate oxide region collapses due to the voltage difference of the society, wherein the voltage displacement electric level voltage shift circuit disclosed in the prior art, and the force-modulating spit The lag displacement circuit can be regarded as a second-stage voltage displacement circuit. Please refer to FIG. 2 , which is a schematic diagram of the two-stage voltage displacement module disclosed in the present invention. The two-stage voltage displacement module 2 includes one The first stage voltage displacement electric 200847616 road 202 and a second stage electric turtle moving circuit 2〇4. Please note that in the top, in order to avoid the line parent error caused by reading is not easy, so the two-stage electric displacement module The face-to-face connection method of the middle two is represented by nodes. For example, all the nodes marked as ^^ are mutually connected, so the potentials of all nodes marked as m are _, and this point is The other nodes shown in FIG. 2 are also the same, so as to avoid the line interleaving, the structure of the county H light displacement circuit 202 in FIG. 2 is substantially the same as that of the electric inspection circuit shown in FIG. There are still some differences. The detailed structure of the first-stage step-displacement circuit will be described later. In the two-stage voltage displacement module, the source of the P-type MOS half-effect transistor 210 is lost. The voltage source VDDI 〇. The source of the second p-type gold-oxygen effect transistor 212 is connected to the voltage source VDDI 〇, and the gate of the first p-type MOS field-effect transistor 210 is The gate is connected to the drain of the first p-type gold-oxygen half field effect transistor 210. The second-stage voltage displacement circuit 204 includes a third p-type gold-oxygen half-field effect transistor, a fourth-type gold-oxygen half-field effect transistor m, a ninth-type N-type gold-oxygen half-field effect transistor, and a tenth N-type gold-oxygen half-field. The effect transistor, the fifth p-type gold oxide half field effect transistor 22, the sixth P-type gold oxygen half field effect transistor 223, the first n-type gold transistor 222, the second N-type gold-oxygen half field effect transistor 224, The seventh p-type gold-oxygen half-effect transistor 226, the eighth-p-type gold-oxygen half-field effect transistor, the fifth n-type gold-oxygen Z field effect transistor 230, and the sixth N-type gold-oxygen half-field effect transistor 232, Seventh (four) gold 12 200847616. Body a, eighth N-type gold oxygen half-field effect transistor 236, ninth N 1 gold milk half-effect transistor 238, virtual + N sentence into the production of three P-type gold oxygen half-ray俨 〗 〖 Meng Gong half-field effect transistor 240. The source of the fourth source is coupled to the drain of the p-type gold-oxygen half-effect transistor 210. fourth? h虱杨 is coupled to 筮一D... The source of jinyang effect transistor 216 = Ρ-Ρ type of gold oxide half field effect transistor _ 汲 。. The fifth P-type gold oxide half 12th day 221 221 gate is connected to the third p-type MOS half-effect transistor 214 2 pole, the source of which is in the second 金 type MOS half-effect transistor 212 The interpole is connected to the voltage source side. The poles of the sixth p-type gold-oxygen half-field effect transistor are coupled to the drain of the fourth-type gold-oxide half ___ Ρ S body 216, and the source 2 material P-type gold field effect transistor 21〇 Difficult, and its infinite _, source VDm. The ninth N-type gold-oxygen half-field effect transistor 218 has a light-thickness t-th p-type of the third p-type gold-oxygen half-field effect transistor 214, and its fineness is 赖2. The tenth N-type gold-oxygen half-field effect transistor is finely connected to the Ϊ-to-oxygen half-field effect transistor plus the drain, and the gate is switched to the ninth N-type gold-oxygen half-field crystal 218. The source of the n-type gold-oxygen half-field effect transistor 22^ is connected to the fifth p^gold-oxygen half-field effect transistor, and the closed-pole system is connected to the first-stage voltage displacement circuit via the node AAA. One of the first signals ^ is the end 'and its drain is connected to the gate of the third P-type MOS half-voltage transistor 14 via the node BB. The source surface of the second N-type gold-oxygen half-field effect transistor 224 is connected to the second and second-type gold-oxygen half-field effect transistor 2, and the gate is switched to the first-order voltage displacement via the node BBB. One of the second signal outputs of the circuit 2〇2, and its immersion is lightly connected to the idle pole of the (f)th p-type gold-oxygen half-effect transistor training. The gate of the seventh P-type gold-oxygen half-field effect transistor 226 is connected to the first-N-type gold oxide half 13 200847616. The gate of the effect transistor 222 is the first-n-type gold-oxygen half-field effect The electric two-body 222 is infinite pole, and its source surface is connected to the voltage source shoulder. The gate of the eighth p-type gold emulsion half-field effect transistor 228 is switched to the gate of the first type of gold-oxygen half-field effect transistor 224, and the gate of the second-type gold-oxygen half-field effect transistor 224 is connected to the first type of gold-oxygen half-field effect transistor. And the source is connected to the voltage source VDD2. The gate of the fifth n-type gold oxide crystal 230 is connected to the second pole of the second p-type gold-oxygen half field effect transistor through the node B_, and the source is lightly connected to the first type of gold-oxygen half-field effect transistor. And the drain is coupled to the closed end of the second p-type MOS field-effect transistor 212. The gate of the dust-oxygen half-field effect transistor 232 is connected to the first cathode of the first type of gold-oxygen half-effect transistor 21 via the node a, and the source is connected to the sixth p-type full field + field effect electricity. The drain of the crystal 2M is coupled to the pole between the first p-type gold field effect transistor 210. The second type of gold-oxygen half-field effect transistor is connected to the voltage source VDD2, and its drain is coupled to the second type of gold oxide =" , eight _ half-field effect transistor - the source of the vehicle, 'seven N · milk half-field effect transistor 234, its gate is transferred to the first-stage displacement circuit plus the second signal output, and _ In the fifth 1> type of gold-oxygen half-field effect crystal power bungee. The ninth N-type full: the half-field effect transistor shifts the dipole axis to the closed end of the first p-type gold-oxygen half-field effect transistor (3), and the poles are lightly connected to the voltage source Vdd2. The drain of the tenth N-type gold field effect transistor 240 is transferred to the ninth N-type gold-oxygen half-field effect transistor, and the pole is transferred to the first-stage electric displacement circuit via the node AAA. The output terminal is reduced, and its source is switched to the drain of the sixth p-type gold-oxygen half field effect transistor. Please note that node A and node B are two-stage cake displacement mode. The signal output of group 2008 20081616 is used to output the digital signal after the voltage range of the input terminal of the signal terminal is enlarged. The first stage voltage displacement circuit 202 comprises an inverse logic operation amplification crying 2 illusion, a ninth P-type gold oxygen half field effect transistor 248, a tenth p-type gold oxygen half field two transistor 250, an eleventh N-type The gold oxide half field effect transistor 244 and a twelfth n-type gold oxide half field effect transistor 246. The first voltage input terminal of the inverse logic operational amplifier 242 is connected to the voltage source VDD, and the second voltage input terminal κ is inverted. The operational amplifier 242 can be biased to a voltage range between the ground terminal and the voltage source VDD1. The gate electrode of the tenth-N-type gold-oxygen half-field effect transistor is connected to the output end of the anti-nose amplifier 242, the source thereof is grounded, and the drain is connected to the first-stage voltage by the node. The first signal output terminal of the displacement circuit 2〇2. The twelfth N-type gold-oxygen half-field effect transistor 246' has its gate coupled to the anti-logic operational amplifier such as the wheel-in terminal of its source (four) grounded, and its drain is borrowed (four) point coffee _ first, voltage The displacement circuit is moved to the second signal output end. The source of the ninth p-type gold-oxygen half-field effect transistor (10) is connected to Laiyuan VDD2, and the pole is _ in the twelfth N-type gold-cream half-field effect transistor 2, and its drain is coupled to The tenth-n-type gold-oxygen half-field effect transistor 244 has a drain. The tenth p-type gold-oxygen half-field effect transistor 25〇 is connected to the voltage source VDD2 'the gate is connected to the eleventh N-type gold oxide half-effect transistor 244, and the drain is The surface is connected to the drain of the twelfth n-type field effect transistor 246. The electric two-stage electric-shift module further includes three-N oxygen half-field effect 15 200847616 f 曰 body 252 and a fourteenth N-type gold oxygen half-field effect transistor 254. The thirteenth N-type gold = half 252 The source axis is connected to the source of the tenth __N-type MOS field-effect transistor 244, and is coupled to the second signal output end of the first-stage electric displacement circuit 2〇2 by the node bbb, and The drain is switched to the source of the ninth n-type gold oxide half field effect transistor 218. The source of the tenth (fourth) type gold oxide half field effect transistor 254 is input to the source of the type of gold oxide half field effect transistor μ6. The gate is connected to the first signal output end of the first stage dragon displacement circuit 2〇2 by the node AAA, and the drain electrode is coupled to the tenth N-type gold oxygen half field effect transistor 22() The two-stage voltage displacement module 20 (four) operation mode is described as follows: #信号源I叩m is at a high potential 'Ten-N-type gold oxygen half-field effect transistor tearing will be in the off state' and the twelfth N The type of gold-oxygen half-field effect transistor 246 will be in an on state, so that the potential of the node AAA is not passed by the tenth-n-type gold-oxygen half-field effect transistor. The gambling of VDD2 is too much, in other words, the node AAA is at a high potential at this time; and the potential of the node bbb is greatly reduced by the potential of the voltage source vdD2 due to the passage of the twelfth N-type MOS half-effect transistor 246. Therefore, at this time, the node BBB is at a low potential. At this time, under the bias voltage of the voltage source vdD2 I, the original voltage range is between the signal source input between the potential of the voltage source VDD1, and the voltage range is converted at the nodes AAA and bbb. To fall between the potential of the volts and the voltage source VDD2. Then, at the low potential of the node aaa and the low potential of the node BBB, the seventh P-type MOS half-effect transistor 226 is turned off, the first N-type The gold-oxygen half-field effect transistor 222 is in an on state, the eighth p-type gold-oxygen half-field effect transistor 228 is in an on state, and the second n-type gold-oxygen half-field effect transistor 16 200847616. The Japanese body 224 is closed in the sadness The type of gold oxide half field effect transistor 236 will be in a closed state. The tenth type of gold oxide half field effect transistor will be turned on, and the twelfth type of gold oxide half field effect transistor 252 will be turned off, and the tenth Four-dimensional gold oxide half The field effect transistor 254 will be in an on state. At this time, since the seventh p-type MOS field 227 is in a closed state, and the third MOS field 222 is in an on state, the potential of the node ΒΒ Will be pulled down to a low level: the same reason, because the eighth! > type of gold-oxygen half-field effect transistor is now on, " and the first type of gold-oxygen half-field effect transistor seems to be in the off state, so the node from The potential will be maintained at a high potential close to the voltage source VDD2. Since the node is at a high potential and the node BB is at a low potential, the king 卩 type MOS solar field transistor 2 = is on, and the fourth? The type of gold oxide half field effect transistor is added to the off state. However, because the thirteenth N-type gold-oxygen half-field effect transistor Μ2 will be in a closed state, and the fourteenth N-type gold-oxygen half-field effect transistor 254 will be in an open state, the tenth Ϊ-Ν type gold-oxygen half-field electric power The crystal 252 has no current passing through, and the fourteenth two-type gold-oxygen half field effect transistor 254 has a current passing therethrough, and the third p-type gold-type half-field effect transistor 214 has a small passing current, and the first izgp type gold oxide The half field effect transistor 216 has a large current to pass. At this time, the potential of the third P-type gold-oxygen half-field effect transistor and the pole is closer to the potential of the source, that is, the potential close to the voltage source, and the fifth P-type MOS field-effect transistor 221 is turned off. Therefore, the potential of the drain of the first-P type MOS field-effect transistor 21() (that is, the potential of the node A) 曰 is close to the potential of the voltage source VDDI ;; similarly, the fourth p-type MOS half-field faa The potential of the & pole of the body 216 is pulled low, so that the sixth p-type gold-milk half-field effect transistor 223 enters an on state, and pulls down the second 1> type gold-oxygen half field 2 17 200847616. The potential of the bungee of 212 (that is, the potential of the node B) is at a high level, and the node α is the point A.
的電位會接近於電_ 輸會處於低電位，其中節點A p型金氧半場效電晶體22==漏的電位會因為_於第六 侧之電蝴。之咖觸侧而比電壓源 第五N型金氧半場效電晶體23()、第七 體234、與第八\型金氧半場效電晶體2來 =時’_A的電位更為快速的放電而降:電：： 第六N型金氧半場效電晶體说 门理 238、與第核型全氧半^^:九^金乳+%效電晶體 電位時，f二 係用來在節點B處於低 &、^、、電位更為快速的放電稱低電位。如以上所 位時，第五_金氧半場效電晶體现 \、間極祕於處於低電位的節點3而_1,且第八Ν型金 電㈣236會因為其閘軸接於處於低電位的節點删 230 1卩此"卩點Α ^位不會被第五1^型金氧半場效電晶體 ==舰⑽侧234、離峨氧半 曰 =36拉低而順利維持在高電位。同理，由於第六N型金氧半 ^電，體232會因為其間極搞接於處於高電位的節點a而開 含雷/第十N型至氧半％效電晶體240會因為其閘極轉接於處於The potential will be close to the power _ loss will be at a low potential, where the node A p-type MOS half-effect transistor 22 == leakage potential will be due to _ on the sixth side of the electric butterfly. The coffee touches the side and is faster than the voltage source of the fifth N-type gold-oxygen half-field effect transistor 23 (), the seventh body 234, and the eighth type-type gold-oxygen half-field effect transistor 2 when the '_A potential Discharge and drop: electricity:: The sixth N-type gold-oxygen half-field effect transistor says that the 238, and the nucleus type oxy-half ^^: nine ^ gold milk +% effect transistor potential, f two is used in Node B is at a low &, ^, and a more rapid discharge is called a low potential. As in the above position, the fifth _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The node deletes 230 1 卩 & & & Α Α Α Α 位 Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α Α 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五 第五. Similarly, due to the sixth N-type gold oxide half-electrode, the body 232 will open the thunder/tenth N-type to the oxygen half-% effect transistor 240 because of its connection to the node a at a high potential. Extremely transferred to
Γ开Γ _ ^ _啟，因此第六N型金氧半場效電晶體232 ^成—放電路徑，且第九N型金氧半場效電晶體238與第十N 里至氧半場效電晶體240會形成另外一條放電路徑，以加快節點B 18 200847616 拉低電位的速度。凊注意，當第型金氧半場效電晶體23〇包 含於第二級電壓位移電路204内時，可在不包含第七金氧半 場效電晶體234與第八N型金氧半場效電晶體236的狀況下同樣 達到加速降低節點A之電位的效果；反之，當第七1^型金氧半場 效電晶體234與第八N型金氧半場效電晶體236存在於第二級電 壓位移電路204内時，可在不包含第五_金氧半場效電晶體23〇 的狀況下達到加速降低節點A之電位的效果。同理，當第六㈣ 金氧半場效電晶體232包含於第二級電墨位移電路綱内時，可 在不包含第九N型金氧半場效電晶體238與第十N型金氧半場效 電晶體24G的狀況下達到加速降低節點B之電位的效果，且反之 亦然。總結來說，第五N型金氧半場效電晶體23〇、第七㈣金 氧半場效電晶體234、第八N型金氧半場效電晶體236、第六n 型金氧半場效電晶體232、第九N型金氧半場效電晶體238、與第 十N型金氧半場效電晶體係用來以放電的方式加速第二級電 麼位移電路204在電位上的切換，因此使得二段式電壓位移模組 2〇〇可以快速且準確的根據訊號端Iiiput輸入的電位切換其輸出 位。 凊注思，雖然以上之敘述僅基於訊號源Input處於高電位的狀 況來說明’但是由於第二級電壓位移電路綱係具備有對稱之結 構’因此訊號源在Input處於低電位的狀況與上面的敘述也會在第 二級電壓位移電路綱各電晶體之間呈現對稱，故不再此加^資 述除此以外’第一級電壓位移電路2〇2可以-般常見可提高電 19 200847616 .壓範圍上限之其他電壓位移電路來實施，且第2軸示之 移模組200僅為本發明所揭露之一較佳實施例，故 位移電路202以其他可提高電壓範圍上限之其他電壓位移電= 替換並不構成脫離本發明之範疇的事實。 將之前所敘财假設賴源VDm之電 ，撕⑽伏特，且電魏贿〇為3 3二= ，慮，本㈣所提供之二段式電壓位移模組·時，輪月 特至3 3 Γμ 輸出訊號之麵範_為1.0伏 寺3.3伏特。以0,18微米製程的積體 差尚不至於造朗極氧化„_絲。料意，本3；^所的提電^ 之-&式賴位移尚可運祕其他 稀 類之外接輸出入裝置的偏壓，並不限於上述之例子與不同種 級電顺供之二財電驗賴_藉由第一 昇，接著再! 的電魏圍上限先行做一初步的提 與下限同步提昇，以避免先前技術範圍的上限 間極氧化區崩潰的缺點，以正確的表;;成^乳杨效電晶體產生 的數位訊號。除此以外，當杯明戶ς出數位邏輯0與數位咖 應用於具有二段式電驗移模組 明之二段_位移模輪ΐ人裝置時，藉由本發 可以順利的提供這些外接輸出人^^壓範圍的優點， 衣罝適备的偏壓。本發明所提供 20 200847616 之二段式電壓位移模組也較先前技術中直接將兩組相同的電壓偏 移電路接起來的做法使用較少的光罩，因此可以避免增加積體電 路的體積。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範 圍所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。 【圖式簡單說明】 第1圖為一種先前技術中可增加電壓範圍上限之電壓位移電路的 示意圖。 第2圖為本發明所揭露之二段式電壓位移模組的示意圖。 【主要元件符號說明】 電壓位移電路 反邏輯運算放大器 N型金氧半場效電晶體 100、202、204 102、242 104、106、108、110、218、 220、222、224、230、232、 234、236、238、240、244、 P型金氧半場效電晶體 電壓源 246、252、254 112、114、210、212、214、 216、221、223、226、228、 248 、 250Γ _ ^ _ 启, so the sixth N-type gold oxygen half-field effect transistor 232 ^ into - discharge path, and the ninth N-type gold oxygen half field effect transistor 238 and the tenth N-to-oxygen half-field effect transistor 240 An additional discharge path is formed to speed up the pulling of the potential at node B 18 200847616.凊 Note that when the first type of gold oxide half field effect transistor 23 is included in the second stage voltage displacement circuit 204, the seventh gold oxygen half field effect transistor 234 and the eighth N type gold oxygen half field effect transistor may not be included. The effect of accelerating the potential of the node A is also achieved under the condition of 236; conversely, when the seventh-type gold-oxygen half field effect transistor 234 and the eighth-n-type gold-oxygen half field effect transistor 236 are present in the second-stage voltage displacement circuit In the case of 204, the effect of accelerating the potential of the node A can be achieved without including the fifth_gold oxide half field effect transistor 23 。. Similarly, when the sixth (fourth) gold oxide half field effect transistor 232 is included in the second stage ink displacement circuit, it may not include the ninth N-type metal oxide half field effect transistor 238 and the tenth N-type gold oxygen half field. In the case of the effect transistor 24G, the effect of accelerating the potential of the node B is reached, and vice versa. In summary, the fifth N-type gold oxygen half field effect transistor 23〇, the seventh (four) gold oxygen half field effect transistor 234, the eighth N-type gold oxygen half field effect transistor 236, the sixth n-type gold oxygen half field effect transistor 232, a ninth N-type gold-oxygen half field effect transistor 238, and a tenth N-type gold-oxygen half-field effect electro-crystal system are used to accelerate the switching of the second-stage electric displacement circuit 204 in a potential manner by discharge, thereby making two The segment voltage displacement module 2〇〇 can quickly and accurately switch its output bit according to the potential input by the signal terminal Iiiput. Note that although the above description is based on the fact that the signal source Input is at a high potential, 'but because the second-stage voltage-displacement circuit has a symmetrical structure', the signal source is at a low potential and the above The description will also show symmetry between the transistors of the second-stage voltage-displacement circuit, so it is no longer necessary to add the above-mentioned 'first-stage voltage-displacement circuit 2〇2 can be commonly used to improve the electricity 19 200847616 . The other voltage displacement circuit of the upper limit of the pressure range is implemented, and the second axis display shift module 200 is only one preferred embodiment of the present invention, so the displacement circuit 202 is other voltage displacement electric current that can increase the upper limit of the voltage range. = Replacement does not constitute a departure from the scope of the invention. The previously mentioned financial assumptions Laiyuan VDm's electricity, tear (10) volts, and electric Wei bribes to 3 3 2 =, consider, the (two) provided by the two-stage voltage displacement module, when the month is special to 3 3 Γμ The output signal _ is 1.0 volts at 3.3 volts. The difference in the 0,18 micron process is not as good as the eclipse __ silk. The material, the 3; ^ the power of the ^ - & The bias voltage of the device is not limited to the above example and the different types of power supply. The first liter, and then the electric Weiwei ceiling is first made a preliminary mention and the lower limit is synchronized. In order to avoid the shortcomings of the extreme oxidation zone in the upper limit of the prior art, to the correct table; to generate the digital signal generated by the yam yang effect transistor. In addition, when the cup Minghu draws out the digital logic 0 and the digital coffee When applied to the two-stage electric inspection module, the two-stage _ displacement mode wheel deaf device, the present invention can smoothly provide the advantages of these external output persons, and the bias voltage suitable for the clothing. The invention provides that the two-stage voltage displacement module of 2008 20081616 also uses less reticle than the direct connection of two sets of identical voltage offset circuits in the prior art, thereby avoiding an increase in the volume of the integrated circuit. The above is only a preferred embodiment of the present invention, The average variation and modification of the scope of the present invention should be covered by the present invention. [Simplified Schematic] FIG. 1 is a schematic diagram of a voltage shift circuit capable of increasing the upper limit of the voltage range in the prior art. The figure is a schematic diagram of a two-stage voltage displacement module disclosed in the present invention. [Main component symbol description] Voltage shift circuit inverse logic operational amplifier N-type gold-oxygen half field effect transistor 100, 202, 204 102, 242 104, 106, 108, 110, 218, 220, 222, 224, 230, 232, 234, 236, 238, 240, 244, P-type MOS half-field effect transistor voltage source 246, 252, 254 112, 114, 210, 212, 214 , 216, 221, 223, 226, 228, 248, 250
VDD 卜 VDD2、VDDIO 21 200847616 節點 A+、B+、A、B、AA、BB、VDD VDD2, VDDIO 21 200847616 Node A+, B+, A, B, AA, BB,
AAA、BBB 訊號源 Input 22AAA, BBB signal source Input 22