TW200847477A - Light emitting diode (LED) and the manufacturing method thereof - Google Patents

Light emitting diode (LED) and the manufacturing method thereof Download PDF

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Publication number
TW200847477A
TW200847477A TW96119232A TW96119232A TW200847477A TW 200847477 A TW200847477 A TW 200847477A TW 96119232 A TW96119232 A TW 96119232A TW 96119232 A TW96119232 A TW 96119232A TW 200847477 A TW200847477 A TW 200847477A
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Taiwan
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resin
light
emitting diode
wafer
transmission coefficient
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TW96119232A
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Chinese (zh)
Inventor
zhi-jia Lin
Chong-Yi Jiang
Yi-Chang Ruan
yuan-ting Zhang
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Bright View Electronics Co Ltd
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Priority to TW96119232A priority Critical patent/TW200847477A/en
Publication of TW200847477A publication Critical patent/TW200847477A/en

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Abstract

This invention provides a light emitting diode (LED), consisting of a reflection cup, a chip, a mixture of phosphor powder and first resin, placed on the bottom of reflection cup and slightly higher than the chip's surface. That first resin possesses the first transparency coefficient. A second resin is placed on the top of the mixture of the phosphor powder and the first resin, and the second resin has the second transparency coefficient, which is larger than that of the first resin; By this way, the radiated ultraviolet or blue rays from the chip can be changed to white light by the phosphor powders and then pass through the first and second resins to scatter out Additionally, this invention also discloses a manufacturing method of LED.

Description

200847477 九、發明說明: 【發明所屬之技術領域】 本發明係一種發光二極體及其製造方法,尤其是一種 於發光二極體中使用兩種不同光透光係數之樹脂,除可降 低製造成本外,亦可增加光散射性與發光二極封裝产 發光二極體及其製造方法。 【先前技術】 按,一般發光二極體之結構,如圖ia〜圖1c所示,其 反射杯100中通常具有一晶片,且於晶片上方分 馨別有螢光粉120及樹脂130,其中圖13之結構係將螢光 粉120及樹脂130均攪拌後再注入該反射杯中;圖 結構係將螢光粉12〇塗佈於晶片11〇之外表面後再將 树月曰130注入该反射杯1Q0中;而圖ic之結構則係使螢 光粉120浮在樹脂130表面再注入該反射杯1〇〇中,且螢 光粉120與晶片11〇之距離d大於晶片no之長度惟 上述三種習知發光二極體之結構,其只使用一種樹脂 130 ’例如環氧樹脂(ex〇py)、石夕膠(syjc〇n g|ue)等,但因螢 φ 光粉12〇之光透光係數不高,若欲增加發光二極體之光散 射性,則需使用具有較高光透光係數之樹脂13〇,如此將 會增加其製造成本,誠屬美中不足之處。 因此,有必要設計一種發光二極體及其製造方法,以 克服上述缺陷。 【發明内容】 、 本發明的目的在於提供一種發光二極體及其製造方 法’其使用兩種不同光透光係數之樹脂,以降低製造成本, 本發明的另一目的在於提供一種發光二極體及其製造 方法’其使用兩種不同光透光係數之樹脂以增加光散射 性。也利用此兩種樹脂之硬度不同強化發光二極體之結構。 200847477 /為了達到上述目的,本發明之發光二極體,一反射杯, 係用以容置下列元件;一晶片,係置於該反射杯之底部· 二螢,粉及第-勸旨之混合物,健於該反射杯之底部且 稍微尚於该,片之表面,且該第一樹脂具有一第一透光係 數;以及一第二樹脂,係置於該螢光粉及第一樹脂之混合 物之上方且該第二樹脂具有一第二透光係數,且該第二 透光巧數係大於該第一透光係數;俾該晶片所發出之紫外 光或藍光可經由該螢光粉轉換成白光後再經由該第一 ⑩ 及弟一樹脂散射出。 、為了達到上述目的,本發明之發光二極體之製造方 法,其至少包括下列方法··將一晶片置於一反射杯之底部; 將二螢光粉及第一樹脂混合後注入該反射杯之底部,且稍 微咼於該晶片之表面,且該第一樹脂具有一第一透光係 數;將一第^樹脂注入於該螢光粉及第一樹脂之混合物之 上^,且該第二透光係數係大於該第一透光係數;以及將 一蓋體置於該反射杯之頂部。 為使貴審查委員能進一步瞭解本發明之結構、特徵 ⑩ 及其目的’茲附以圖式及較佳具體實施例之詳細說明如後。 【實施方式】 凊參閱圖2,其緣示本發明一較佳實施例之發光二極 體之剖面示意圖。本發明之發光二極體,其包括··一反射 杯10 ; —晶片20 ; —螢光粉及第一樹脂之混合物30 ;以 及一第二樹脂40所組合而成。 ^其中,該反射杯10係用以容置該晶片20、螢光粉及 第一樹脂之混合物30以及第二樹脂40等元件。 該晶片20係置於該反射杯1〇之底部,且該晶片20 上具有一正極21及一負極22,且該正極21及負極22分 別經由一導線23及24耦接至該反射杯1〇之底部後,再 6 200847477 ί;ϊ外部接腳(圖未示) ,為此乃習知技術,故在此不擬重 拌後ΐϊΐΐΓ及第—樹脂32之混合物3Q經過均勻攪 面。’且該第一樹脂31具有一第一透光係數·, 或誃1可為一般螢光粉,其可發出紫外光(UV) ιΐ古、樹脂32則例如但不限於為環氧樹脂、石夕膠 旨者’其具有較低之第—透光係數,例 透irtiH1·55。該第—樹脂32因具有較低之光 透先,苎,因此其成本也相對較低。 30二樹1ί !°係置於該螢光粉及第一樹脂之混合物 第一透光#^^二樹脂4Q具有—第二透光係數,且該 4〇7fi_A概第—透光絲。射,該第二樹脂 ϊ,ΓίΓ=為環氧樹脂、_其他高透光性之^脂 係數之、1 ^ 55 #、細如但稀料1.5〜1.8>第一透光 此外,本發明之發光二極體進一步具有一蓋體50,J: 係置於該第二樹脂40之上方且可霜荖3 + 7 該蓋體50係用以保射镇一偷t献射杯10,其中 2〇,其可為-球面透月曰40、螢光粉31及晶片 、,於組合後,當該晶片2〇通電後所發出 體有㈣ 較低透光絲之第-樹脂32及具有 树,村__光係ί: 弟一树月曰曰加其先放射性,因此,確較習知只使用一種 7 200847477 樹脂之發光二極體具有新穎性及進步性。 ^此外,本發明亦提供一種發光二極體之製造方法。請 參閱圖3,其繪示根據本發明之發光二極體之製造方法之 流程示意圖。如圖所示,本發明之發光二極體之製造方法 包括下列步驟·將一晶片20置於一反射杯1〇之底部(步驟 1),將一螢光粉31及第一樹脂32混合後注入該反射杯10 之底部二且稍微高於該晶片20之表面,且該第一樹脂32 具有一第一透光係數(步驟2);將一第二樹脂4〇注入於該 螢光粉31及弟一樹脂32之混合物30之上方,且該第二 透光係數係大於該第一透光係數(步驟3);以及將一蓋體 50置於該反射杯1〇之頂部(步驟4)。 於步驟1中,將一晶片20置於一反射杯10之底部; 其中,該晶片20係置於該反射杯1〇之底部,且該晶片2〇 上具有一正極21及一負極22,且該正極21及負極22分 別經由一導線23及24耦接至該反射杯,◦之底部後,再 耦接至外部接腳(圖未示),為此乃習知技術,故在此不擬重 複贅述。 ▲於步驟2中,將一螢光粉31及第一樹脂32混合後注 入該反射杯10之底部,且稍微高於該晶片2〇之表面,且 該^一,脂32具有一第一透光係數;其中,該螢光粉31 及第二樹脂32之混合物3〇經過均勻攪拌後以注膠方式注 入於該反射杯10之底部,且稍微高於該晶片20之表面, 且該第一樹脂31具有第一透光係數;該螢光粉31可為一 般螢光粉,其可發出紫外光(UV)或藍光;該第一樹脂32 貝J例如但不限於為環氧樹脂、石夕膠其他高透 者’其具有#钱之第-透光係數,例; 1Λ〜1?5。該第—樹脂32因具有較低之光透絲數,因此 其成本也相對較低。 8 200847477 笛一中’將一第二樹脂40注入於該螢光粉31及 丄之混合物3〇之上方,且該第二透光係數係大 m + 4Q魅於該螢光粉 m?,2之混合?30之上方,且該第二樹脂4〇 二5光係數’且該第二透光係數係大於該第一透光 該第二樹脂4〇例如但不限於為環氧樹脂、矽 性之樹脂者’且其第二透光係數例如但不限 於為1·5〜1.8>第一透光係數之1.4〜1.55。 甘士於ί:驟4中,將一蓋體50置於該反射杯10之頂部; 4 2^ 係用轉護該第二樹脂4〇、螢光粉31及 曰曰片20,其可為一球面透明蓋體。 乂 經由本發明之發光二極體及其製造方法之實 m可=不』光透光錬之樹脂,以降低製造成本 先一極體及其製造方法之缺點。1 本案所揭示者,乃較佳實施例之一種, ί ί ίίΓϊ=本案之技術思想而為熟f該項技藝^人ί 易於^知者,倶不脫本案之專利權範疇。 η #綜上所陳,本案無論就目的、手 ,異於習知之技術特徵,且其首先發明二ί在;; 在符合發明之專利要件,騎,審查“以用2 日賜予專利,俾嘉惠社會,實感德便Γ、 並祈早 【圖式簡單說明】 9 200847477 圖1c為-示意圖’鱗示又一習知 林从觀射& ίί^ 與明ϊ?ϊ 晶片之長度a之示意圖。 判-祕實施例之發光 圖3為二示意圖’其緣示根據本發明之發光二極體之 製造方法之流程示意圖。 【主要元件符號說明】200847477 IX. Description of the Invention: [Technical Field] The present invention relates to a light-emitting diode and a method of manufacturing the same, and more particularly to a resin using two different light transmittance coefficients in a light-emitting diode, in addition to reducing manufacturing In addition to cost, light-scattering and light-emitting diode packages can be added to light-emitting diodes and methods for their manufacture. [Prior Art] According to the structure of a general light-emitting diode, as shown in FIG. 1A to FIG. 1c, the reflective cup 100 usually has a wafer, and the phosphor powder 120 and the resin 130 are separated on the wafer. The structure of FIG. 13 is that the phosphor powder 120 and the resin 130 are both stirred and then injected into the reflective cup; the structure is such that the phosphor powder 12 is coated on the outer surface of the wafer 11 and then the tree moon 130 is injected into the structure. In the reflective cup 1Q0; the structure of the image ic is such that the phosphor powder 120 floats on the surface of the resin 130 and is injected into the reflective cup 1〇〇, and the distance d between the phosphor powder 120 and the wafer 11 is greater than the length of the wafer no. The structure of the above three conventional light-emitting diodes uses only one kind of resin 130' such as epoxy resin (ex〇py), Shiyuejiao (syjc〇ng|ue), etc., but due to the light of the fluorescent powder The light transmission coefficient is not high. If the light scattering property of the light-emitting diode is to be increased, it is necessary to use a resin 13 having a high light transmittance coefficient, which will increase the manufacturing cost thereof, which is a drawback. Therefore, it is necessary to design a light-emitting diode and a method of manufacturing the same to overcome the above drawbacks. SUMMARY OF THE INVENTION An object of the present invention is to provide a light-emitting diode and a method of manufacturing the same that use two different light transmittance coefficients to reduce manufacturing cost. Another object of the present invention is to provide a light-emitting diode. The body and its manufacturing method 'use two resins of different light transmittance to increase light scattering. The structure of the light-emitting diode is also enhanced by the difference in hardness between the two resins. 200847477 / In order to achieve the above object, the light-emitting diode of the present invention, a reflector cup, is used for accommodating the following components; a wafer is placed at the bottom of the reflector cup, a mixture of two firefly, powder and a persuasion , at the bottom of the reflector cup and slightly above the surface of the sheet, and the first resin has a first light transmission coefficient; and a second resin is disposed on the mixture of the phosphor powder and the first resin Above and the second resin has a second light transmission coefficient, and the second light transmission coefficient is greater than the first light transmission coefficient; and the ultraviolet light or blue light emitted by the wafer can be converted into the fluorescent powder through the fluorescent powder After the white light, it is scattered through the first 10 and the other resin. In order to achieve the above object, the method for manufacturing the light-emitting diode of the present invention comprises at least the following method: placing a wafer on the bottom of a reflective cup; mixing the two phosphors and the first resin into the reflective cup a bottom portion, and slightly slid on the surface of the wafer, and the first resin has a first light transmission coefficient; a resin is injected onto the mixture of the phosphor powder and the first resin, and the second The light transmission coefficient is greater than the first light transmission coefficient; and a cover is placed on top of the reflective cup. The structure, features, and objects of the present invention will be further understood by the review of the present invention. [Embodiment] Referring to Figure 2, there is shown a schematic cross-sectional view of a light-emitting diode according to a preferred embodiment of the present invention. The light-emitting diode of the present invention comprises a reflective cup 10; a wafer 20; a mixture 30 of phosphor powder and a first resin; and a second resin 40. The reflector cup 10 is for accommodating components such as the wafer 20, the phosphor powder and the first resin mixture 30, and the second resin 40. The wafer 20 is disposed at the bottom of the reflective cup 1 and has a positive electrode 21 and a negative electrode 22, and the positive electrode 21 and the negative electrode 22 are coupled to the reflective cup 1 via a wire 23 and 24, respectively. After the bottom, then 6 200847477 ί; ϊ external pin (not shown), for this reason is a known technology, so here is not intended to remix the mixture of the ΐϊΐΐΓ and the first resin 32Q after uniform mixing. 'And the first resin 31 has a first light transmittance ·, or 誃1 can be a general fluorescent powder, which can emit ultraviolet light (UV) ιΐ古, resin 32 such as but not limited to epoxy resin, stone The oxime collaborators' have a lower first-light transmission coefficient, for example, irtiH1·55. The first resin 32 has a relatively low light transmission and is relatively low in cost. 30二树1ί !° is placed in the mixture of the phosphor powder and the first resin. The first light transmission #^^2 resin 4Q has a second light transmission coefficient, and the 4〇7fi_A is a light-transmitting wire. Shot, the second resin ϊ, ΓίΓ= is epoxy resin, _ other high light transmittance, 1 ^ 55 #, fine as thin but 1.5~1.8> first light transmission, in addition, the present invention The light emitting diode further has a cover 50, J: is placed above the second resin 40 and can be frosted 3 + 7 . The cover 50 is used to protect the town from stealing a cup 10, 2 〇, which may be a spherical surface, a phosphor powder 31, and a wafer. After the combination, when the wafer is energized, the body is provided with (4) a lower light-transmitting filament-resin 32 and having a tree. Village __光系 ί: The younger brother of the tree is added with its first radioactivity. Therefore, it is indeed more novel and progressive to use only one kind of 7200847477 resin light-emitting diode. In addition, the present invention also provides a method of manufacturing a light-emitting diode. Please refer to FIG. 3, which is a flow chart showing a method of manufacturing a light-emitting diode according to the present invention. As shown in the figure, the manufacturing method of the light-emitting diode of the present invention comprises the following steps: placing a wafer 20 on the bottom of a reflective cup 1 (step 1), mixing a phosphor 31 and the first resin 32. The second resin 32 has a first light transmission coefficient (step 2); and a second resin 4 is injected into the phosphor powder 31. And a second light transmission coefficient is greater than the first light transmission coefficient (step 3); and a cover 50 is placed on top of the reflective cup 1 (step 4) . In step 1, a wafer 20 is placed at the bottom of a reflective cup 10; wherein the wafer 20 is placed at the bottom of the reflective cup 1 and has a positive electrode 21 and a negative electrode 22, and The positive electrode 21 and the negative electrode 22 are coupled to the reflective cup via a wire 23 and 24, respectively, and then coupled to an external pin (not shown), which is a conventional technique, and thus is not intended herein. Repeat the details. ▲ In step 2, a phosphor powder 31 and a first resin 32 are mixed and injected into the bottom of the reflector cup 10, and slightly higher than the surface of the wafer 2, and the grease 32 has a first pass. a light coefficient; wherein the mixture of the phosphor powder 31 and the second resin 32 is uniformly injected and injected into the bottom of the reflector cup 10 and slightly higher than the surface of the wafer 20, and the first The resin 31 has a first light transmittance; the phosphor powder 31 can be a general phosphor powder, which can emit ultraviolet light (UV) or blue light; the first resin 32 is, for example but not limited to, epoxy resin, Shi Xi Other high-permeability rubbers have the #钱之光-transmission coefficient, for example; 1Λ~1?5. Since the first resin 32 has a low number of light-transmitting wires, its cost is relatively low. 8 200847477 笛一中'Inject a second resin 40 onto the mixture of the phosphor powder 31 and the crucible 3〇, and the second transmittance coefficient is m + 4Q charmed on the phosphor powder m?, 2 Mixed? Above the 30, and the second resin 4 〇 2 5 optical coefficient 'and the second transmittance coefficient is greater than the first light transmission of the second resin 4 〇 such as but not limited to epoxy resin, resinous resin 'And its second light transmission coefficient is, for example but not limited to, 1.5 to 1.8>; the first light transmission coefficient is 1.4 to 1.55. In the fourth step, a cover 50 is placed on top of the reflector cup 10; 4 2^ is used to transfer the second resin 4〇, the phosphor powder 31 and the bake piece 20, which may be A spherical transparent cover.经由 Through the light-emitting diode of the present invention and the method of manufacturing the same, it is possible to reduce the manufacturing cost of the first-polar body and the manufacturing method thereof. 1 The person disclosed in the present case is a kind of preferred embodiment, ί ίίίΓϊ=the technical idea of the case is a familiar skill, and it is easy to know, and does not deviate from the patent right of the case. η # 综合上, Chen, regardless of the purpose, hand, different from the technical characteristics of the well-known, and its first invention of the two; in the patent requirements of the invention, riding, review "to use 2 days to grant a patent, Yu Jia Hui society, the real sense of virtue, and pray early [schematic description] 9 200847477 Figure 1c is a schematic diagram of the schematic diagram of another known forest from the observation & ίί^ and alum? ϊ wafer length a. - illuminating diagram of the embodiment of the present invention is a schematic diagram showing the flow of the method for manufacturing the light-emitting diode according to the present invention.

反射杯1 〇 正極21 導線23、24 螢光粉31 第二樹脂40 反射杯1〇〇 螢光粉120 晶片2〇 負極22 混合物30 第一樹脂32 盍體5〇 晶片11 〇 樹脂130 • 步驟1 :將一晶片20置於一反射杯10之底部 步驟2:將一螢光粉31及第—樹脂32混合後注入 該反射杯之底部,且稍微高於該晶片20之表 面’且该弟一 Μ脂32具有—第一透光係數 步驟3 :將一第二樹脂40注入於該螢光粉31及第 一樹脂32,混合物30之上方,且該第二透光係數 係大於該第一透光係數 步驟4 ·將一蓋體50置於該反射杯、〇之頂部。Reflector cup 1 〇 Positive electrode 21 Conductor 23, 24 Fluorescent powder 31 Second resin 40 Reflective cup 1 〇〇 Fluorescent powder 120 Wafer 2 〇 Negative electrode 22 Mixture 30 First resin 32 盍 Body 5 〇 Wafer 11 〇 Resin 130 • Step 1 : placing a wafer 20 on the bottom of a reflector cup step 2: mixing a phosphor powder 31 and a resin 32 into the bottom of the reflector cup, and slightly higher than the surface of the wafer 20' The resin 32 has a first light transmission coefficient step 3: a second resin 40 is injected into the phosphor powder 31 and the first resin 32, above the mixture 30, and the second light transmission coefficient is greater than the first light transmission coefficient. Light Coefficient Step 4 - Place a cover 50 on top of the reflector cup and crucible.

Claims (1)

200847477 十、申請專利範圍: 1·一種發光二極體,其包括: 一反射杯,係用以容置下列元件; 一晶片,係置於該反射杯之底部; 一赏光粉及第一樹脂之混合物,係置於該反射杯之 部且猶微高於該晶片之表面,且該第—樹脂具有一第一透 光係數;以及 处 u七一第脂,係置於該螢光粉及第一樹脂之混合物之 总且該第二樹脂具有—第二透光係數,且該第二透光 係數係大於該第一透光係數; 尤 〜ΐΐί片所發出之紫外光或藍光可經由該螢光粉轉換 成白光後再Mi娜-_旨对二樹脂飾ώ。 、 .晶片1顿叙發*二減,其中該 =括* I、有正極及一負極,且該正極及負極分別經由一 v線輕接至該反射杯之底部。 第 3專 第-樹脂之;以二,極體,其中該 請專f道圍第1項所述之發光二極體,豆中該 巧粉及弟一樹脂之混合物可以注膠方式注杯 第二Ϊ月5項所述之發光二極體,其中該 第專,圍第6項所述之發光二極體立中該 弟-树脂之第二透光係數可為]5Η8。,、τ 步呈8有如申^專利範圍第1項所述之發光二極體,直進一 a有—讀,係置於該第二樹脂之上方且可ϊ蓋該反射 200847477 杯’其中該盍體可為一球面透明蓋體。 9· 一種發光二極體之製造方法,其至少包括下列方法: 將一晶片置於一反射杯之底部; 、,將一螢光粉及第一樹脂混合後注入該反射杯之底部, 且稍微高於該晶片之表面,且該第一樹脂具有一第二透光 係數; 將一第二樹脂注入於該螢光粉及第一樹脂之混合物之 上方,且^第二透光係數係大於該第一透光係數;以及 將一蓋體置於該反射杯之頂部。 、10·如申請專利範圍第9項所述之發光二極體之製道 ,其中於該將一晶片置於一反射杯之底部之步驟中, ^-曰ί上步具有—正極及—貞極,且該正極及負極分 別經由一導線耦接至該反射杯之底部。 .如申請專利範圍第9項所述之發光二極體之製造方 中於該將—螢光粉及第-樹脂混合後注人該反助 μ氐二且稍微尚於該晶片之表面,且該第一樹脂呈有一 之步驟中,該第一樹脂可為一環氧樹月’旨、石, ί ^4^5絲之細旨者,該第-細旨之第―透光係數可 太、、土4專相帛9項所述之發光二極體之製道 之混合έ之將Γΐί樹脂注人於該螢光粉及第一樹脂 光性^=者_三翻旨可為-魏細1、轉其他高透 方法—述f發光二鋪之製造 ^褒弟一树月曰之弟二透光係數可為15〜18。 方法,申利範圍* 12項所述之發*二極體之製造 ,、中於该將一蓋體置於該反射杯之頂部之步驟中, 12 200847477 該蓋體可為一球面透明蓋體。200847477 X. Patent application scope: 1. A light-emitting diode comprising: a reflective cup for accommodating the following components; a wafer placed at the bottom of the reflective cup; a glazing powder and a first resin The mixture is placed in the portion of the reflector cup and is slightly higher than the surface of the wafer, and the first resin has a first light transmission coefficient; and the first layer of the grease is placed on the phosphor powder and the first a total of a mixture of the resin and the second resin having a second light transmission coefficient, and the second light transmittance is greater than the first light transmittance; the ultraviolet light or blue light emitted by the film may be passed through the firefly After the light powder is converted into white light, then Mi Na-_ is the right resin. The wafer is 1 **2, wherein the =1 includes a positive electrode and a negative electrode, and the positive electrode and the negative electrode are respectively lightly connected to the bottom of the reflective cup via a v-line. The third special-resin; the second, the polar body, which please use the light-emitting diode described in item 1 of the road, the mixture of the powder and the resin of the bean can be injected into the cup. The light-emitting diode according to item 5 of the second month, wherein the second light transmission coefficient of the light-emitting diode according to the sixth item is the same as that of the resin. , τ step is 8 as in the application of the patent range of the first item of the light-emitting diode, straight into a a-read, placed above the second resin and can cover the reflection 200847477 cup 'the 盍The body can be a spherical transparent cover. 9) A method for manufacturing a light-emitting diode, comprising at least the following method: placing a wafer on the bottom of a reflective cup; mixing a phosphor and a first resin into the bottom of the reflective cup, and slightly Higher than the surface of the wafer, and the first resin has a second light transmission coefficient; a second resin is injected over the mixture of the phosphor powder and the first resin, and the second light transmission coefficient is greater than the a first light transmission coefficient; and placing a cover on top of the reflective cup. 10. The method of manufacturing a light-emitting diode according to claim 9, wherein in the step of placing a wafer on the bottom of a reflector cup, ^-曰ί has a positive electrode and a cathode. And the positive electrode and the negative electrode are respectively coupled to the bottom of the reflective cup via a wire. The manufacturing method of the light-emitting diode according to claim 9 of the present invention, after mixing the phosphor powder and the first resin, injecting the counter-assisting and slightly slightly on the surface of the wafer, and In the step of forming the first resin, the first resin may be a fine object of an epoxy tree, a stone, and a wire, and the light transmission coefficient may be too , , , , , , , , , , , , , , , , , , , , , , , , , , , 帛 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂 树脂Fine 1, turn to other high-permeability methods - the production of f-light two shop ^ 褒 一 一 一 一 一 一 一 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二 二The method of claim 4, wherein the manufacturing of the diode is as described in item 12, wherein the cover is placed on the top of the reflector cup, 12 200847477 the cover may be a spherical transparent cover . 1313
TW96119232A 2007-05-30 2007-05-30 Light emitting diode (LED) and the manufacturing method thereof TW200847477A (en)

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