TW200847227A - Filament lamp and light irradiation type heat treatment device - Google Patents

Filament lamp and light irradiation type heat treatment device Download PDF

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Publication number
TW200847227A
TW200847227A TW097107337A TW97107337A TW200847227A TW 200847227 A TW200847227 A TW 200847227A TW 097107337 A TW097107337 A TW 097107337A TW 97107337 A TW97107337 A TW 97107337A TW 200847227 A TW200847227 A TW 200847227A
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Taiwan
Prior art keywords
filament
light
insulating support
lamp
insulating
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TW097107337A
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Chinese (zh)
Inventor
Shinji Suzuki
Yoichi Mizukawa
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Ushio Electric Inc
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Publication of TW200847227A publication Critical patent/TW200847227A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Resistance Heating (AREA)

Abstract

To provide a filament lamp and light irradiation type heat treatment device that eliminates device-by-device variation of the irradiation-intensity distribution on the article to be treated, a filament lamp (1) has multiple filament assemblies (41 to 45) with coiled filaments (411 to 451) connected to leads (412a to 452a, 412b to 452b) that supply electrical power to the filaments arranged within a tubular bulb (3), which is formed with hermetic seal areas (2a, 2b), extending along the bulb axis of the bulb, with power being supplied to each filament independently by electrical connection of the leads of the filament assemblies to multiple conductive parts (81a to 85a, 81b to 85b) located in the seal areas, and in which the leads (412a to 452a, 412b to 452b) of the filament assemblies (41 to 45) are inserted through the inside of the filaments (411 to 451).

Description

200847227 九、發明說明 【發明所屬之技術領域】 本發明是關於白熾燈及光照射式加熱處理裝置，尤其 是關於爲了加熱被處理體所使用的白熾燈及使用白熾燈的 光照射式加熱處理裝置。 【先前技術】 一般，在半導體製造工程中，在成膜、氧化、氮化、 膜穩定化、矽化物化、結晶化、離子植入活性化等的各種 製程，採用著加熱處理。爲了提昇半導體製程的良率或品 質’急速地上昇或降低半導體晶圓等的被處理體的溫度的 急速熱處理（RTP : Rapid Thermal Processing)較佳。在 RTP中，使用來自白熾燈等的光源的光照射的光照射式加 熱處理裝置（以下，也僅稱爲加熱處理裝置）被廣泛地使 用。 於光透射性材料所成的發光管內部配設有燈絲所成的 白熾燈，是接通電力的90%以上被全放射，不必接觸到被 處理體就可加熱之故，因而爲可將光利用作爲熱的代表性 燈。將此種白熾燈使用作爲玻璃基板或半導體晶圓的加熱 用熱源時，與電阻加熱法相比較，高速地可昇降溫被處理 體的溫度。亦即，依照光照射式加熱處理，例如可將被處 理體在數秒鐘至數十秒鐘就可昇溫到1 000 °C以上的溫度， 而停止光照射之後’被照射體是急速地被冷卻。 在此，被處理體爲例如半導體晶圓（矽晶圓）時，在 -4- 200847227 將半導體晶圓加熱成1 0 5 0 t以上之際若在半導體晶圓發生 溫度分布不均勻，則在半導體晶圓發生被稱爲滑_( glip )的現象，亦即，發生結晶轉移的缺陷，而有成爲不良品 之虞。所以，使用光照射式加熱處理裝置執行半導體晶圓 的RTP時，則把半導體晶圓全面的溫度分布成爲均勻的方 式，必須執行加熱、保持高溫、冷卻。亦即，在RTP，處 理被處理體之際，被要求高精度的溫度均勻性。 在光照射式加熱處理，例如半導體晶圓全面的物理特 性爲均勻時，即使在半導體晶圓全面的放射照度成爲均勻 般地執行光照射，半導體晶圓的溫度分布也不會成爲均勻 ，而半導體晶圓周邊部的溫度會變低。此爲，在半導體晶 圓的周邊部，由半導體晶圓側面等會放射熱。此種熱放出 之際，在半導體晶圓產生不均勻的溫度分布。如上述地， 將半導體晶圓加熱到1 〇 5 0 °C以上之際，若在半導體晶圓發 生溫度分布的不均勻，則在半導體晶圓會發生滑動。 因此，擬將半導體晶圓的溫度分布作成均勻，爲了補 償來自半導體晶圓側面等的熱放射所致的溫度降低，將晶 圓周邊表面的放射照度，作成比晶圓中央部表面的放射照 度還大的方式，執行光照射較佳。 作爲習知的加熱處理裝置，在專利文獻1，揭示將從 白熾燈所放射的光利用在加熱玻璃基板或半導體晶圓的加 熱處理裝置。 第1 1圖是表示如專利文獻1所示的習知技術的加熱處 理裝置200的斷面圖。如同圖所示地，該加熱處理裝置200 200847227 是在以光透射性材料所形成的腔201內收納被處理體202， 而在該腔20 1外的上下兩段上下相對且互相交叉般地配置 複數支加熱用白熾燈2 0 3、2 0 4 ’而藉由此些的加熱用白熾 燈2 0 3、2 0 4從兩面光照射來加熱被處理體2 0 2所構成。 第1 2圖是表示將簡化圖示於第1 1圖的加熱處理裝置而 上下兩段地設置的加熱用白熾燈2 0 3、2 0 4與被處理體2 0 2 予以取出的立體圖。如同圖所示地，設於上下兩段的加熱 用白熾燈2 0 3、2 0 4，是配置成使得管軸能交叉之故’因而 可均勻地加熱被處理體2 0 2。又，依照該裝置，可防止依 被處理體2 0 2的周邊部的散熱作用所致的溫度降低。例如 對於被處理體202，將位於上段兩端的加熱用白熾燈L 1、 L2的燈輸出設定成比中央部的加熱用白熾燈L3的燈輸出還 大，而將位於下段兩端的加熱用白熾燈L4、L5的燈輸出設 定成比中央部的加熱用白熾燈L6的燈輸出還大。藉由此’ 來補償被處理體202的周邊部的散熱作用所致的溫度降低 的份量，減小被處理體2 0 2的中央部與周邊部的溫差’而 可將被處理體202的溫度分布作成均勻。 但是，在上述習知的加熱處理裝置判明了發生如以T 的問題。具體上，例如，被處理體2 0 2爲半導體晶圓時’ 一般於半導體晶圓表面藉由濺鍍法形成有金屬氧化物等所 形成的膜，或是藉由植入離子摻雜有雜質添加物的情形° 在此種金屬氧化物的膜厚或雜質離子的密度，會在晶圓表 面上具有場所性的分布。此種場所性的分布，是對於半導 體晶圓的中心並不一定爲中心對稱。以雜質離子密度作爲 -6 - 200847227 例子，則例如，如第12圖所示地，在對於半導體晶圓的中 心不是中心對稱的窄小特定領域202 1與其他領域20 22有雜 質離子密度不相同的情形。即使對於此種特定領域2〇2 1與 其他領域2022光照射成爲同一放射照度，在特定領域202 1 與其他領域2022，也在溫度上昇速度上產生差異’而特定 領域202 1的溫度與其他領域2022的溫度並不一定成爲一致 〇 依照上述習知的加熱處理裝置2 0 0，補償依被處理體 2 02的周邊部的熱放射的溫度降低的影響而防止在周邊部 的溫度降低，把被處理體202的溫度分布作成均勻較容易 。然而，例如如第1 2圖所示地，針對於全長度比燈的發光 長還短的半導體晶圓的窄小特定領域202 1，以對應於該特 定領域202 1的特性的光強度執行光照射時，則也會光照射 到特定領域202 1以外的領域2022。所以，無法使得特定領 域2 02 1與其他領域2022被控制成適當的溫度狀態。亦即， 例如無法使得兩者的溫度成爲均勻般地控制窄小特定領域 202 1的放射照度。因此，在被處理體202的處理溫度成爲 發生不期望的溫度分布，而在光加熱處理後，發生很難在 被處理體202賦予所期望的物理特性的問題。 第13圖是表示圖示於專利文獻2的熱處理裝置300的斷 面圖。如同圖所示地，該熱處理裝置300是具備：在燈房 301內，具有U形狀而將設於對於燈絲3 02 1的饋電裝置設於 發光管兩端部的雙端燈3 022朝對於紙面平行方向及垂直部 方向排列複數個所構成的第1燈單元3 02，及配設於第1燈 200847227 單元3 02的下方側的具有直線形狀而對於燈絲3 03 1的饋電 裝置沿著紙面朝與紙面垂直方向排列設於發光管的兩端部 的複數個雙端燈3 03 2的第2燈單元3 03，而對於配設於第2 燈單元3 03下方的半導體晶圓等的被處理體3 04進行加熱處 理者。 在專利文獻2，記載著在被處理體3 04，與其他部分比 較有溫度變低的趨勢的爲了上昇與載置被處理體304的支 撐環3 05的連接部的溫度，具備將屬於位於連接部上方的 第1燈單元3 02的U形狀燈控制成高輸出的機構。又，在專 利文獻2，該加熱處理裝置3 00是槪略記載著如下地使用情 形。首先，以中心對稱將被處理體3 04的半導體晶圓的加 熱領域分割成同心的複數區。又，組合依第1、第2燈單元 3 02、3 0 3的各燈的照度分布，而對於分別對應於各區的半 導體晶圓的中心形成中心對稱的合成照度分布圖案，執行 因應於各區的溫度變化的加熱者。這時候，爲了抑制來自 燈的光的照度參差不齊的影響，旋轉著被處理體3 04的半 導體晶圓。亦即，成爲以個別的照度來加熱同心地配置的 各區。 因此，表示於專利文獻2的熱處理裝置3 00，是針對於 被處理體3 04的窄小特定領域對於半導體晶圓的中心呈中 心對稱的情形，則可控制溫度。但是，針對於特定領域對 於半導體晶圓的中心不是中心對稱的情形，則旋轉被處理 體3 04的半導體晶圓之故，因而無法良好地解決上述問題 200847227 又，該熱處理裝置3 0 0是實用上，有發生如下所示的 問題點之虞。具體上，具有U形狀的燈是由水平部3 023與 一對垂直部3 024所構成，惟有助於發光僅爲燈絲3 02 1配設 於內部的水平部3 023，因此各個燈是介裝不可忽略程度的 空間而配置成隔開，而在對應於該空間的正下方的部分會 發生溫度分布者。 亦即，該熱處理裝置3 00是即使組合依對應於各區的 第1、第2燈單元3 02、3 03的各燈的照度分布而形成半導體 晶圓中心對稱的合成照度分布，在對應於上述空間的正下 方的部分，照度也較陡峭地變化（降低）。因此，即使執 行因應於各區的溫度變化的加熱，擬減小在對應於上述空 間正下方的部分所發生的溫度分布，也較難者。 又，該熱處理裝置3 00是近年來，有盡量減小用以配 設燈單元的空間（主要爲高度方向）的趨勢，若使用具有 U形狀的燈，則成爲需要對應於燈的垂直部3 024的空間之 故，因而由小空間化的觀點較不理想。 第1 4圖是表示本案申請人爲了解決上述的問題點而先 前申請所提案的圖示於專利文獻3的白熾燈400的立體圖。 該白熾燈400是如以下地槪略所構成。在白熾燈400的發光 管401的兩端，形成有金屬箔402 1〜4024所埋設的封閉部 4 0 3 1、4 0 3 2。在發光管4 0 1內，配設有燈絲4 0 4 1、4 0 5 1與 用以饋電於燈絲404 1、405 1的導線4042〜4043、405 2〜 405 3所構成的複數燈絲體404、405 (在第14圖爲兩個）。 在此，各燈絲體404、405，是配設複數於發光管401內之 200847227 際，燈絲404 1、405 1朝發光管401的長度方向依次配置般 的所構成。 連繫於一方的燈絲體4 0 4的燈絲4 0 4 1的一端的導線 4 042，是電性地被連接於被埋設在發光管401的一端側的 封閉部403 1的金屬箔402 1。又，連繋於一方的燈絲體404 的燈絲4041的另一端的導線4043，是經絕緣體409的貫通 穴409 1，而與另一方的燈絲體405的燈絲405 1相對的部位 的外側以絕緣管4044所覆蓋，電性地被連接於被埋設在發 光管401的另一端側的封閉部403 2的金屬箔4022。同樣地 ，連繫於另一方的燈絲體405的燈絲405 1的一端的導線 4052，是電性地被連接於被埋設在發光管401的一端側的 封閉部4032的金屬箔4023。又，連繫於另一方的燈絲體 405的燈絲405 1的另一端的導線405 3，是經絕緣體409的貫 通穴4092，而與一方的燈絲體404的燈絲404 1相對的部位 的外側以絕緣管40 5 4所覆蓋，電性地被連接於被埋設在發 光管401的一端側的封閉部403 1的金屬箔4024。 又，在被埋設於封閉部403 1、4032的金屬箔402 1〜 4024中，在與連接有燈絲404、40 5的導線4042〜4043、 405 2〜405 3的端部相反側的相反側的端部，連接有外部導 線406 1、4064成爲從封閉部404、405朝外部突出。因此， 在各燈絲體404、405經由金屬箔4021〜4022、4023〜4024 連結有兩條外部導線406 1〜4062、4063〜4064。饋電裝置 4071、4072是經由外部導線4061〜4062、4063〜4064被連 接於每一各燈絲404 1、405 1。藉由此，白熾燈400是成爲 -10- 200847227 個別地可饋電於各燈絲體404、405的燈絲404 1、405 1。 又，各燈絲4 0 4 1、4 0 5 1，是藉由設置於夾在發光管 4 0 1的內壁與絕緣管4 0 4 4、4 0 5 4之間的環狀的拉樁4 0 8。被 支撐成不會與發光管4 0 1接觸。在此，在燈絲發光時，當 燈絲404 1、405 1與發光管401內壁接觸，則接觸部分的發 光管401的光透射性是藉由燈絲404 1、405 1的熱而在發光 管401會發生透明消失受到損失。拉樁408是防止此種缺失 者。拉樁408是對於各燈絲404 1、405 1配設複數個於發光 管401的長度方向。又，製作白熾燈400時，使得複數燈絲 體404、405容易地插入在發光管401內般地，拉棒40 8是具 有某種程度彈性。又，在發光管401的內壁與絕緣管4044 、4054之間的空間與拉樁408之間，設有某種程度的間隙 〇 該白熾燈400是在發光管401內具有複數燈絲404 1、 40 5 1，成爲個別地進行各燈絲404 1、40 5 1的發光等的控制 的構造。若使用具有並列地排列此種白熾燈400的光線部 的光照射式加熱處理裝置，則與使用如習知地在發光管內 具有1個燈絲的白熾燈的情形相比較，對應於被光照射的 被處理體的被照射領域，成爲可高密度地配置燈絲。 所以，依照使用如上述的白熾燈的光照射式加熱處理 裝置，對於複數燈絲可個別地饋電之故，因而即使基板狀 被處理體上的特定領域對於基板形狀爲非對稱的情形，也 可成爲對於特定領域以所期望的光強度執行光照射。因此 ，即使被熱處理的基板狀的被處理體的場所性的溫度變化 -11 - 200847227 程度的分布對於基板形狀爲非對稱的情形，也成爲可均勻 地加熱被處理體，而在被處理體整體全面，可期待實現均 勻的溫度分布。 又，使用如上述的白熾燈的光照射式加熱處理裝置， 是與使用具有專利文獻2所述的U形狀的燈的光照射式加熱 處理裝置相比較，可將裝載於光照射式加熱處理裝置的白 熾燈作成直管狀之故，因而成爲不需要對應於U形狀燈的 垂直部的空間，而可期待小型化加熱處理裝置。 專利文獻1:日本特開平7-37833號 專利文獻2:日本特開2002-203804號 專利文獻3:日本特開2006-279008號 【發明內容】 本案發明人等’是依照表示於專利文獻3的第1圖的構 成’以同一規格製作裝載如第丨4圖所示的白熾燈的複數光 照射式加熱處理裝置，以同一開動條件開動該複數光照射 式加熱處理裝置。在此，同一規格，是指各該光照射式加 熱處理裝置中’配置於白熾燈的燈絲體的個數及配置於燈 單元的白熾燈的支數爲同一。又，具有同一規格的各個光 照射式加熱處理裝置中，配置於各該燈單元的白熾燈的配 置方法爲同一。同一開動條件是指在配置於燈單元的各該 白熾燈所接近的電力爲同一，而在各該光照射式加熱處理 裝置配置被處理體的環境（例如氣體的種類、氣體的壓力 等）爲同一。 -12- 200847227 依照裝載如第1 4圖所示的白熾燈的光照射式加熱處理 裝置，藉由個別地控制供應於各該燈絲的電力，可將被處 理體上的放射照度分布作成所期望的分布。因此，若以同 一開動條件來開動具有此種同一規格的各個光照射式加熱 處理裝置，則在藉由各個光照射式加熱處理裝置加熱處理 的各個被處理體中，放射照度分布是應該一致。 但是，現實上，在藉由複數的各光照射式加熱處理裝 置被加熱處理的各該被處理體中，發生在放射照度分布發 生參差不齊的問題。尤其是，藉由裝載有多數燈絲體配設 於發光管內的白熾燈，在被處理體上欲實現高精度的溫度 控制的光照射式加熱處理裝置中，顯著地發生上述的問題 〇 發生此種問題的主要原因是有如下。在近年來，被要 求高精度地控制被處理體的溫度，而爲了因應於此種要求 ’隨著在發光管內部配置多數燈絲，配置於發光管內部的 導線條數增多成習知以上。又，爲了急速加熱半導體晶圓 等的被處理體，被要白熾燈的大電力化，亦即，被要求對 燈絲的每一單位長度的接通電力增加成習知以上。隨著此 種要求，成爲必須在燈絲流動大電流之故，因而導線在點 燈中成爲高溫而發熱或不會有熔斷的情形，使得導線的外 徑逐漸增大成習知以上。由此種事項，藉由配置於發光管 內的導線遮住來自燈絲的放射光的事態容易產生成習知以 上，而會發生如上述的問題者。 又’在此種白熾燈，配設於發光管內部的複數各該導 -13- 200847227 線不會互相地短路，以絕緣管覆蓋各該導線，而配置此種 絕緣管也與發生上述問題有關係者。亦即，在點亮白熾燈 時，藉由照射來自燈絲的放射光，使得絕緣管成爲極高溫 狀態而發生絕緣管會發光的事態。若發生此種事態，則與 在燈絲以外的場所出現新的發生體同樣的狀態，而對被處 理體上的放射照度分布給與不良影響的可能性高者。 本發明的目的，鑑於上述的問題點，提供在每一光照 射式加熱處理裝置地解決在被處理體上的放射照度分布發 生參差不齊的白熾燈及光照射式加熱處理裝置。 本發明是爲了解決上述課題，採用如下手段。 第1手段是一種白熾燈，屬於在至少一端形成有封閉部 的長管狀的發光管內部，連結有盤管狀的燈絲與將電力供應 於該燈絲的導線所成的複數燈絲體，爲各燈絲沿著發光管的 管軸延伸般地依次排列配設，各燈絲體的各該導線對於配設 於封閉部的複數的各該導電性構件被電性地連接而對於各燈 絲分別獨立地饋電的白熾燈，其特徵爲：在上述盤管狀的燈 絲內側，插通有上述各該燈絲體的導線。 第2手段是在第1手段中，於上述燈絲內側，配置有沿 著燈絲的中心軸延伸的絕緣支撐體，而在該當絕緣支撐體 ，形成有用以插通上述各該燈絲體的導線的複數通路。 第3手段是在第1手段中，上述封閉部是配設棒狀的封 閉用絕緣體，而且在上述封閉用絕緣體的外周設置間隔而 排列複數導電性構件，上述發光管與上述封閉用絕緣體經 由導電性構件被氣密地封閉所形成。 -14 - 200847227 第4手段是一種光照射式加熱處理裝置，其特徵爲： 具備配置有第1手段所述的白熾燈所成的光源部，將從該 光源部所放射的光照射於被處理體俾加熱被處理體。 第5手段是一種光照射式加熱處理裝置，其特徵爲： 具備排列地配置有第1手段所述的複數白熾燈所成的燈單 元，將從該燈單元所放射的光照射於被處理體俾加熱被處 理體。 依照申請專利範圍第1項所述的發明，在燈絲的內側 ，配置有各該燈絲體的導線之故，因而在燈絲的外側未配 置有導線，而即使在發光管內部配設複數燈絲體的情形， 也不會有來自燈絲的放射光藉由導線被遮住，而可得到所 期望的光放射照度分布。 依照申請專利範圍第2項所述的發明，即使配置於燈 絲內側的絕緣支撐體，藉由點亮時照射來自燈絲的光而成 爲高溫狀態執行發光，而依該發光的光的大部分是被遮蔽 在燈絲也不會放射到燈外部之故，因而不會影響到放射照 度分布。又，從絕緣支撐體所放射而穿過燈絲的盤管間隙 的光是從燈絲內側所放射的光之故，因而在光學上與燈絲 實質上發光者可視爲同等，而對於光放射照度分布不會給 與不良影響。 依照申請專利範圍第3項所述的發明，在封閉部配設 棒狀封閉用絕緣體，而且在該當封閉用絕緣體的外周配置 間隔而排列複數導電性構件，發光管與封閉用絕緣體經由 導電性構件氣密地封閉於兩者間之故，因而爲了對於被處 -15- 200847227 理體執行高精度的溫度控制，即使在發光管內部配設多數 燈絲體，也不會使得多數導電性構件互相地短路，而可減 小封閉部的大小。 依照申請專利範圍第4項所述的發明，藉由使用申請 專利範圍第1項所述的白熾燈，可實現在每一光照射式加 熱處理裝置地解決在被處理體上的放射照度分布發生參差 不齊的光照射式加熱處理裝置。 依照申請專利範圍第5項所述的發明，藉由使用申請 專利範圍第1項所述的白熾燈所構成的燈單元，可實現在 每一光照射式加熱處理裝置地解決在被處理體上的放射照 度分布發生參差不齊的光照射式加熱處理裝置。 【實施方式】 使用從第1圖至第6圖說明本發明的第1實施形態。 第1圖是表示本實施形態的發明的白熾燈1的構成的立 體圖。 如同圖所示地，白熾燈1是具備在兩端形成有封閉部 2a、2b的例如石英玻璃等的光透射性材料所成的長管狀例 如直管狀的發光管3。在發光管3的內部封入有鹵素氣體’ 而且配設有5個燈絲體41、42、43、44、45，各該燈絲體 41、42、43、44、45的盤管狀的各該燈絲41 1、421、431 、44 1、45 1朝管軸方向依次並排延伸。而配設於絕緣支撐 體9的外側。燈絲體4 1、4 2、4 3、4 4、4 5是藉由被連結於 燈絲 4 1 1、4 2 1、4 3 1、4 4 1、4 5 1 與燈絲體 4 1、4 2、4 3、4 4 -16- 200847227 、45的兩端的饋電用的導線412a、422a、432a、442a、 452a 與導線 412b、422b、432b、442b、452b所構成’因應 於被處理體的尺寸、物理特性等適當地調整個數。又’藉 由與絕緣支撐體9一體地固定的絕緣支撐體支撐環97a、 97b推向發光管3的內壁’使得絕緣支撐體9被支擦於發光 管3的內部。 在發光管3的兩端近芳的內部’配设有棒狀石央玻璃 所成的封閉用絕緣體5 a、5 b。在一方的封閉用絕緣體5 a ( 5 b )的周面上大約等間隔地沿著封閉用絕緣體5 a ( 5 b )的 長度方向平行地配設有5個金屬涪61a、62a、63a、64a、 65a (61b、62b、63b、64b、65b) 〇 各該金屬箔 61a、62a 、63a、 64a、 65a (61b、 62b、 63b、 64b、 65b) ’ 是爲了 避免折彎，全長比封閉用絕緣體5 a ( 5 b )的全長還短。金 屬箔的個數是因應於配設於發光管3內的燈絲體4 1、42、 43、44、45的個數而增減，在通常成爲燈絲體41、42、43 、44、45的個數兩倍。在發光管3，藉由以燃燒器等加熱 對應於配置有封閉用絕緣體5a ( 5b )的部位的發光管3的 外周，於發光管3與封閉用絕緣體5a ( 5b )之間經由金屬 箱 61a、 62a、 63a、 64a、 65a (61b、 62b、 63b、 64b、 65b )形成有氣密地被封閉的封閉部2a ( 2b )。 封閉用絕緣體5a ( 5b )的外徑是比發光管3的內徑還 小之故，因而發光管3是在與封閉用絕緣體5a ( 5b )密接 的部分，亦即在封閉部2a ( 2b )中被縮徑。各燈絲體4 1、 42、43、44、45的各該導線 412a、422a、43 2a、442a、 -17- 200847227 452a (412b、 422b、 432b、 442b、 452b)，是經由在封閉 部 2a (2b)所對應的金屬箱 61a、62a、63a、64a、65a ( 6 1b、62b、63b、6 4b、65b )，電性地被連接於比發光管3 的端部還朝管軸方向外方延伸的外部導線71a、72a、73a 、74a、75a (71b、72b、73b、74b、75b)。在各該外部 導線 71a、72a、73a、74a、75a (71b、72b、73b、74b、 7 5 b )，連接有未圖示的饋電裝置成爲對於各該燈絲4 1 1、 421、431、441、451獨立地饋電 ° 如此地，若在發光管3的內部配設封閉用絕緣體5 a ( 5b )而形成封閉部2a ( 2b )，即使在發光管3的內部，藉 由配設多數燈絲體41、42、43、44、45配設有多數導電性 構件 81a、82a、83a、84a、85a (81b、82b、83b、84b、 85b )的白熾燈1，也活用圓柱狀絕緣支撐體5a ( 5b )的側 周面而互相不會接觸地可配設多數金屬箔61a、62a、63a 、64a、65a (61b、62b、63b、64b、65b )之故，因而可 抑制封閉部2a ( 2b )變大的情形。尤其是，與藉由夾緊封 閉來形成扁平形狀的封閉部相比較，在配設多數導電性構 件 81a、 82a、 83a > 84a、 85a (81b、 82b、 83b、 84b、 85b )的情形，也可減小封閉部2a ( 2b )的大小之故，因而在 省空間化的觀點較佳。又，各該金屬箔61a、62a、63a、 64a、65a (61b、62b、63b、64b、65b )是在尺寸上若可 能，並不是等間隔，對應於配置成可效率優異地照射來自 白熾燈1的光的導線位置般地調整間隔而可加以配設。 各該燈絲體41、42、43、44、45，是藉由對於各該燈 -18- 200847227 絲體41、42、43、44、45—個一個地一體地固定的環狀拉 樁（省略圖示）朝發光管3的內壁，被支撐於發光管3的內 部。藉由設置拉樁，爲了避免在燈絲發光時高溫的燈絲 411、421、431、441、451接觸於發光管3的內壁之故，因 而可避免發生起因於高溫的燈絲411、421、431、441、 451接觸於發光管3的內壁而令發光管3透明消失的不方便 〇 第2圖是表示圖示於第1圖的白熾燈1的燈絲體4 1、42 、43、44、45與絕緣支撐體9所構成的發光部的構成的局 部立體圖；第3圖是表示藉由圖示於第2圖的A-A’線朝管軸 方向切剖白熾燈1的局部斷面圖。 如此些圖所示地，白熾燈1是複數燈絲體4 1、42、43 、44、 45的各該導線 412a、 422a、 432a、 442a、 452a與導 線412b、 422b、 432b、 442b、 452b以被支撐於絕緣支撐體 9的狀態下被配置於發光管3的內部。例如，石英玻璃等的 絕緣材料所成的棒狀絕緣支撐體9，是貫通朝管軸方向排 列的5個所有盤管狀的燈絲411、421、431、441、451而沿 著管軸方向延伸，使得其中心軸配置成與各該燈絲體4 1 1 、4 2 1、4 3 1、4 4 1、4 5 1的中心軸一致的狀態。在絕緣支撐 體9的內部，用以插通各該導線412a、422a、432a、442a 、452a與導線 412b、 422b > 432b、 442b、 452b的通路 91、 92、93、94、95設置成對應於導線 412a、422a、43 2a、 442a、 452a與導線 412b、 422b、 432b、 442b、 452b的支數 ，而各該通路91、92、93、94、95互相沿著管軸平行地延 -19- 200847227 伸，而且在各該端面連通於形成於同一周上的導出口 913a 、923 a、9 3 3 a、943 a、95 3 a與導出口 913b、923b、93 3 b、 943b 、 953b ° 詳細地說明，則設於絕緣支撐體9的複數各該通路9 1 、92、93、94、95是由：連通於沿著管軸延伸而形成於絕 緣支撐體9的端面的導出口 913a、923a、933a、943a、 953a的水平通路 911a、 921a、 931a、 941a、 951a，及連續 於水平通路911a、921a、931a、941a、95 la而朝管軸正交 方向屈曲延伸，且連通於形成在絕緣支撐體9的側面的導 出口 913c、 923c、 933c、 943c、 953c的垂直通路 912a、 922a、932a、942a、952a，及連通於導出口 913b、923b、 933b、 943b、 953b的水平通路 911b、 921b > 931b、 941b、 951b，及連續於水平通路 911b、921b、931b、941b、951b 而朝管軸正交方向屈曲延伸，且連通於形成在絕緣支撐體 9的側面的導出口 913d、 923d、 933d、 943d、 953d的垂直 通路912b、922b、932b、942b、952b所構成者，此些水平 通路與垂直通路是管軸方向的斷面形成L形狀。複數的各 通路91、92、93、94、95，是在管軸方向中，垂直通路 912a、 922a、 932a、 942a、 952a與垂直通路 912b、 922b、 932b、942b、9 5 2b是在相對狀態下，隔著相當於燈絲411 、4 2 1、4 3 1、4 4 1、4 5 1的全長的距離相對著。 在第2圖中，絕緣支撐體9是具備在管軸方向分別相對 的5對通路91、92、93、94、95，而在各該端面形成有排 列於同一圓周上的5個導出口 913a、923a、933a、943a、 -20- 200847227 953a與導出口 913b 、 923b、 933b、 943b、 953b，而且在管 軸方向分別相對的5對導出口，亦即，1 〇個導出口 9 1 3 c、 923c、93 3 c > 943c、9 5 3 c 與導出口 9 1 3 d、923 d、93 3 d、 943 d、95 3 d形成於側面。又，絕緣支撐體9是互相地不會 短路各該導線412、422、432、442、452而可導出至絕緣 支撐體9的外部般地，令形成於各該端面的複數導出口 913a、923 a、933 a、943 a、9 5 3 a 與導出口 9 1 3 b、923b、 93 3 b、943 b、9 5 3 b位於同一圓周上較佳。 此種絕緣支撐體9是例如藉由對於石英玻璃等的絕緣 材料所成的棒材施以切削加工，或是對於成形模流進熔融 的石英玻璃等的熔融液之後冷卻熔融液，作成形成具備插 通上述的導線412、422、432、442、452的複數通路91、 92、 93、 94、 95的構成。 被支撐於絕緣支撐體9的各該燈絲體41、42、43、44 、45是具備：被連接於燈絲411、421、431、441、451的 一端部，而且朝管軸正交方向延伸的垂直導線部4 1 2 1 a、 4221 a、43 2 1 a、442 1 a、45 2 1 a，及連續於垂直導線部 4121a、 4221a、 4321a、 4421a、 4521a，而朝管軸方向延 伸的水平導線部 4122a、4222a、4322a、4422a、4522a 所 構成的鈎狀地形成的一方的導線4 1 2 a、4 2 2 a、4 3 2 a、4 4 2 a 、45 2a，及被連接於燈絲 411、421、431、441、451 的一 端部，而且朝管軸正交方向延伸的垂直導線部4 1 2 1 b、 422 1 b、43 2 1 b、442 1 b、452 1 b，及連續於垂直導線部 4121b、 4221b、 4321b、 4421b、 4521b，而朝管軸方向延 -21 - 200847227 伸的水平導線部 4122b、4222b、4322b、4422b、4522b 所 構成的鈎狀地形成的另一方的導線412b、422b、43 2b、 442b 、 452b ° 各該燈絲體41、42、43、44、45是對於此種絕緣支撐 體9，在對於各該燈絲411、421、431、441、451將絕緣支 撐體9配置於同軸上的狀態下，如下地被安裝。一方的導 線412a、 422a、 432a、 442a、 452a，是藉由於絕緣支撐體 9側面的導出口 913c、 923c、 933c、 943c、 953c插入水平 導線部 4122a、4222a > 43 22a、4422a、4522a的前端，而 將水平導線部 4122a、4222a、4322a、4422a、4522a 的前 端從絕緣支撐體9的一方的端面的導出口 913a、923 a、 93 3 a、943 a、9 5 3 a朝絕緣支撐體9外面突出，而且將垂直 導線 4121a、 4221a、 4321a、 4421a、 4521a的前端從絕緣 支撐體9的側面的導出口 913c、923c、933c、943c、953c 朝絕緣支撐體9外面突出，俾安裝於絕緣支撐體9。 與此同樣地，另一方的導線4 1 2b、422b、43 2b、442b 、452b，是藉由於絕緣支撐體9側面的導出口 913d、923 d 、93 3 d、943d、95 3 d插入水平導線部 4122b、4222b、 43 22b、4422b、45 22b的前端，而將水平導線部4122b、 422 2b、43 22b、442 2b、4 5 2 2 b的前端從絕緣支撐體9的另 一方的端面的導出口 913b、923 b、93 3 b、943b、9 5 3 b朝絕 緣支撐體9外面突出，而且將垂直導線4121b、422 1 b、 43 2 1 b、442 1 b、452 lb的前端從絕緣支撐體9的側面的導出 口 913d、923 d、93 3 d、943 d、95 3 d朝絕緣支撐體9外面突 22- 200847227 出，俾安裝於絕緣支撐體9。 燈絲體41、42、43、44、45對於絕緣支撐體9的安裝 ，是如上述地，並不被限定於將導線412a、422a、43 2a、 442a、 452a與導線412b、 422b、 432b、 442b、 452b事先連 接於燈絲41 1、421、43 1、441、45 1的兩端所構成的燈絲 體41、42、43、44、45安裝於絕緣支撐體9的方法，也可 執行藉由將燈絲4 1 1、4 2 1、4 3 1、4 4 1、4 5 1與導線4 1 2 a、 422a、 432a、 442a、 452a及導線412b、 422b、 432b、 442b 、45 2b分別地配置於絕緣支撐體9之後，將導線412a、 422a、 432a、 442a、 452a與導線 412b、 422b、 432b、 442b 、4 5 2 b連接於燈絲4 1 1、4 2 1、4 3 1、4 4 1、4 5 1的兩端的方 法。 又，燈絲41 1、421、431、441、451的芯線直徑爲如 φ 0.5 mm以下而較柔軟時，以連續燈絲411、421、431、 44 1、45 1，與垂直導線部 4121a、4221a、4321a、4421a、 4521a、 4121b、 4221b、 4321b、 4421b、 4521b，及水平導 線部 4122a、4222a、4322a、4422a、4522a、4122b、 4222b、43 2 2b、442 2b、4 5 2 2 b的無接縫的1條芯線所形成 ，而將水平導線部 4122a' 4222a > 4322a、4422a > 4522a 插入在絕緣支撐體9側面的導出口 913c、923c、93 3 c、 943c、953c，並從絕緣支撐體9側面的導出口 913d、923d 、933d、943d、953d 插入水平導線部 4122b、4222b、 43 22b、4422b、4522b而作成安裝也可以。 第4圖是表示利用與紙面平行之面切剖與圖示於第3圖 -23- 200847227 的燈絲體41、42、43、44、45與絕緣支撐體9所成的發光 部的構成不相同的燈絲體41、42、43、44、45與絕緣支撐 體9所成的發光部的構成的局部斷面圖。 表示於第4圖的發光部，是分別以1條水平通路9 1 1、 水平通路921、水平通路93 1、水平通路941、及水平通路 951來構成表示於第3圖的水平通路911a與911b、水平通路 921a與921b、水平通路931a與931b、水平通路941a與941b 、及水平通路95 1 a與95 lb之處不相同。如此地，若將各水 平通路9 1 1、9 2 1、9 3 1、9 4 1、9 5 1作成1條貫通穴形狀，則 成以拉拔或噴射成形等低成本而適用於大量生產的手法可 製作絕緣支撐體9的水平通路911、921、931、941、951。 結果，可大幅度地減少成本與需要加工時間的切削加工， 而可減低製造成本。尤其是在絕緣支撐體9的全長度超過 2 00 mm的長燈，則成本的刪減效果更顯著。 第5 ( a )圖是表示與圖示於第3圖的燈絲體4 1、42、 43、44、45與絕緣支撐體9所成的發光部的構成不相同的 燈絲體4 1、4 2 (燈絲體4 3、4 4、4 5是未圖示）與絕緣支撐 體9所成的發光部的構成的局部前視圖’第5 ( b )圖是表 示利用與紙面平行的面切剖圖示於第5 ( a )圖的燈絲體4 1 、42 (燈絲體43、44、45是未圖示）與絕緣支撐體9所成 的發光部的局部斷面圖。 如此些圖所示地，絕緣支撐體9是由：連通於沿著管 軸延伸而形成於絕緣支撐體9的一方的端面的導出口 9 1 3 a 、923a (導出口 933a、943a、953a是未圖示）的水平通路 -24- 200847227 911a、921a (水平通路931a、941a、951a是未圖示），及 連續於水平通路911a、921a (水平通路931a、941a、951a 是未圖示），而形成於朝管軸正交方向開口並沿著管軸延 伸的絕緣支撐體9側面的水平開口溝961、962 (水平開口 溝963、964、965是未圖示），及連通於水平開口溝961、 962 (水平開口溝963、964、96 5是未圖示）而沿著管軸延 伸的水平通路911b (水平通路921b、931b、941b、951b是 未圖示），及連通於水平通路911b (水平通路921b、931b 、941b、95 lb是未圖示）而形成於絕緣支撐體9的另一方 的端面的未圖示的導出口 913b、923b、933b、943b、953b 等所構成。此種絕緣支撐體9是例如對於石英玻璃等的絕 緣材料所成的棒施以切削加工，或是，對於成形模流進經 熔融的石英玻璃等的熔融液之後，藉由冷卻熔融液，成爲 形成具備插通導線的複數通路的構成。 被支撐於絕緣支撐體9的各該燈絲體4 1、42 (燈絲體 43、44、45是未圖示）中，各燈絲41 1 (燈絲421、43 1、 44 1、45 1是未圖示），是以燈絲4 1 1 a、4 1 1 b所構成，燈絲 41 lb是設置成纏上於絕緣支撐體9之故，因而燈絲41 la是 可支撐成不會接觸於絕緣支撐體9。又，其他的未圖示的 燈絲42 1、4 3 1、44 1、4 5 1，也與燈絲4 1 1同樣地，由燈絲 421a、421b、白熾燈 43 la、43 lb、白熾燈 441a、441b、白 熾燈451a、451b所構成。 各該燈絲體41、42、43、44、45是對於此種絕緣支撐 體9，各該燈絲4 1 1、4 2 1、4 3 1、4 4 1、4 5 1之中，以燈絲 -25- 200847227 4 1 1作爲例子加以說明，則對於燈絲4 1 1在將絕緣支撐體9 配置於同軸上的狀態下，如下被安裝。一方的導線4 1 2 a， 是從絕緣支撐體9側面的水平開口溝96 1插入水平導線部 4 122a的前端，而將水平導線部41 22a的前端從絕緣支撐體 9的一方的端面的導出口 91 3a突出於絕緣支撐體9外面，而 且藉由將垂直導線部4 1 2 1 a的前端從絕緣支撐體9的水平開 口溝96 1突出於絕緣支撐體外面，被安裝於絕緣支撐體9。 與此同樣地，另一方的導線4 1 2b，是從絕緣支撐體9側面 的水平開口溝961插入水平導線部41 22b的前端，而將水平 導線部41 22b的前端從絕緣支撐體9的另一方的端面的導出 口 91 3b突出於絕緣支撐體9外面，而且藉由將垂直導線部 4 1 2 1 b的前端從絕緣支撐體9側面的水平開口溝96 1突出於 絕緣支撐體9外面，被安裝於絕緣支撐體9。將燈絲體4 1安 裝於絕緣支撐體9之際，從水平開口溝961插入燈絲體41的 水平導線部4122a、41 22b進行安裝之故，因應安裝作業成 爲容易。 第6 ( a )圖是表示與圖示於第3圖的燈絲體4 1、42、 43、44、45與絕緣支撐體9所形成的發光部的構成不相同 的燈絲體41、42、45 (燈絲體43、44是未圖示）與絕緣支 撐體9所形成的發光部的構成的局部立體圖，第6 ( b )圖 是表示以A-A’之面切剖圖示於第6 ( a)圖的燈絲體41、42 、45 (燈絲體43、44是未圖示）與絕緣支撐體9所形成的 發光部的構成的局部斷面圖。 如此些圖所示地，在絕緣支撐體9，形成有：從絕緣 -26- 200847227 支撐體9的一方的端面側一直延伸到朝管軸正交方向開口 而沿著管軸支撐燈絲41 1、421、451 (燈絲431、441是未 圖示）的絕緣支撐體9的部位爲止的水平開口溝96 1 a、 962a、963a、964a、965a，及從絕緣支撐體9的另一方的 端面側一直延伸到朝管軸正交方向開口而沿著管軸支撐燈 絲411、421、451 (燈絲43 1、441是未圖示）的絕緣支撐 體9的部位爲止的水平開口溝961b、963b、964b (水平開 口溝962b、965b是未圖示）。此種絕緣支撐體9是例如對 於石英玻璃等的絕緣材料所成的棒施以切削加工’或是’ 對於成形模流進經熔融的石英玻璃等的熔融液之後’藉由 冷卻熔融液所形成。 各該燈絲體41、42、43、44、45是對於此種絕緣支撐 體9，各該燈絲41 1、421、431、441、451之中，以燈絲 4 1 1作爲例子加以說明，則對於燈絲4 1 1在將絕緣支撐體9 配置於同軸上的狀態下，如下被安裝。一方的導線4 1 2a， 是藉由將水平導線部4122 a配設於從絕緣支撐體9的一方的 端面側所形成的水平開口溝96 1 a，而被安裝於絕緣支撐體 9。與此同樣地，另一方的導線4 1 2b，是藉由將水平導線 部41 22b配設於從絕緣支撐體9的另一方的端面側所形成的 水平開口溝9 6 1 b，而被安裝於絕緣支撐體9。將燈絲4 1 1安 裝於絕緣支撐體9之際，爲將燈絲體41的水平導線部4122a 、41 22b配設於被開口的水平開口溝961a、961b進行安裝 之故，因而安裝作業成爲容易。 又，在上述中，水平開口溝96 la與水平開口溝96 lb是 -27- 200847227 形成作爲未連結的不相同溝，惟藉由水平導線部41 22a與 水平導線部4 1 22b使得燈絲4 1 1以充分強度不會朝管軸方向 錯開般地被固定時，則形成作爲連續水平開口溝96 1 a與水 平開口溝96 1 b的1個水平開口溝也可以。這時候，成爲以 使用模具的拉拔法等可製作溝的形成，而可刪減加工成本 〇 將本實施形態的發明的白熾燈1的具體性規格的一例 表示於以下。 發光管3是外徑爲Φ 6mm至Φ 40mm左右，全長度爲數 十mm至8 00mm左右，藉由被處理體的大小，從白熾燈1到 被處理體的距離，燈單元內的燈配置所決定。各該燈絲體 41、42、43、44、45，是使用直徑爲φ 0.05mm至1mm左右 的芯線。在本實施例中，以距離50mm照射0 3 0 0mm的矽晶 圓時，使用發光管外徑28mm，全長度560mm，燈絲芯線直 徑〇.5mm，在一個燈絲的最大全長度爲l4〇nim，而外徑被 形成φ 8mm的燈絲兩端，連接有外徑爲比燈絲芯線還大徑 白勺例如φ 0 · 8 m m的導線。燈絲外徑是並不被限定於Φ 8 m m ，依照所需電力與燈絲溫度，成爲6 4mm左右至φ 2〇111111左 右。每一支燈絲的最大額定電流値，是依照所需的被處理 物的昇溫特性與封閉部2的金屬箔61、62、63、64、65的 容許電流値所決定，在本實施例爲25Α °絕緣支撐體9的外 徑是藉由燈絲內徑或燈絲數量來決定’成爲Φ 2至Φ 1 8 mm &右，而全長度是設定成比燈絲的長度總和還長且可裝在 f光管3內的長度。在本實施例’由外$φ3·5ιηιη’全長度 -28- 200847227 460mm的石英玻璃製的棒材所構成，而各該通路91、92、 93、94、95的直徑是可貫通導線412、422、432、442、 452般地，比導線412、422、432、442、452還大的直徑， 例如爲Φ 1 m m。 如以上所述，依照本實施形態的發明的白熾燈1，基 本上，對於複數各該燈絲4 1 1、4 2 1、4 3 1、4 4 1、4 5 1，經 由被配設於封閉部2a、2b的各該導電性構件81a、82a、 83a、84a、8 5 a 及導電性構件 8 1 b、82b、83b、84b、85b 而 獨立地被饋電的構成，即使經熱處理的被處理體的場所性 的溫度變化程度的分布對於基板形狀爲非對稱的情形’也 可均勻地加熱被處理體之故，因而在被處理體全體全面地 可實現均勻的溫度分布。 而且，藉由配設於各該燈絲41 1、421、431、441、 45 1的內部的絕緣支撐體9，例如在配設於燈絲4 11的內部 的絕緣支撐體9，燈絲4 1 1以外的其他燈絲42 1、43 1、44 1 、451的各該導線422、432、442、452不會互相地短路而 被支撐之故，因而仍使在發光管3的內部配設有複數燈絲 體41、42、43、44、45的構成，也不會在燈絲41 1、421、 431、44 1、451 的外側配置有導線 412、422、432、442、 452雖然容易確保各該導線412、422、432、442、452間的 絕緣，來自燈絲411、4 21、4 31、4 41、4 51的放射光不會 藉由導線412、422、432、442、452被遮住，可期待可得 到所期望的光放射照度分布的效果。 又，配置於燈絲41 1、421、43 1、441、45 1的內部的 -29- 200847227 絕緣支撐體9，即使在點亮時來自燈絲4 1 1、42 1、43 1、 44 1、451的光被照射而藉由成爲高溫狀態施行發光，依其 發光的光的大部分被燈絲411、421、431、441、451所遮 蔽，而不會露出到燈外部之故，因而不會影響到放射照度 分布。又，從絕緣支撐體9所放射而穿過燈絲4 1 1、42 1、 4 3 1、4 4 1、4 5 1的盤管間隙的光是從燈絲4 1 1、4 2 1、4 3 1、 44 1、4 5 1的內部，亦即從中心所放射的光之故，因而與在 光學上燈絲411、421、431、441、451實質上發光可能同 等，因此不會對光放射照度分布給與不良影響之虞。 本實施形態的發明的白熾燈1的構成，是可期待如上 述的效果，而對於以急速加熱，且精度優異地來溫度控制 被處理體作爲目的者特別地有效。詳細地，本發明的構成 是針對於可耐於流在每一燈絲的如2 5 A的大電流般地外徑 具備φ 0.8 mm的導線的燈絲體，配設4個以上於發光管3內 者特別有效。 以下，使用第7圖來說明本發明的第2實施形態。 第7圖是表示本實施形態的發明的白熾燈1的燈絲體4 1 、42、43、44、45，與絕緣支撐體10所形成的發光部的構 成的立體圖。本實施形態的發明的白熾燈1，是代替表示 於第1圖的燈絲體與絕緣支撐體所形成的發光部，而藉由 適用表示於第7圖的燈絲體與絕緣支撐體所形成的發光部 成爲可能。 如同圖所示地，白熾燈1的燈絲體4 1、42、43、44、 4 5與絕緣支撐體1 0所形成的發光部，是除了使用在沿著管 -30- 200847227 軸延伸的中心構件1 0 1的周圍，具有將沿著管軸延伸的複 數絕緣管 1021a、 1022a、 1023a、 1024a、 1025a與絕緣管 1021b、 1022b、 1023b、 1024b、 1025b配置於同一圓周上 的構成的絕緣支撐體1 0之外，具有與表示於第2圖的構成 同樣的構成。絕緣支撐體1 〇是由沿著管軸延伸的棒狀中心 構件1 〇 1，及與中心構件1 〇 1平行地延伸而配置於中心構件 1 〇 1的側面的複數絕緣管1 〇 2 1 a、1 0 2 2 a、1 0 2 3 a、1 0 2 4 a、 1025a與絕緣管 1021b、 1022b、 1023b、 1024b、 1025b所構 成。中央構件1 0 1是由石英玻璃、氧化鋁等的陶瓷、鎢或 鉬等的高融點金屬所構成，而複數絕緣管1021a、1 022a、 1023a 、 1024a 、 1025a 、 1021b 、 1022b 、 1023b 、 1024b 、 l〇25b是由石英玻璃、氧化鋁等的陶瓷所構成。在本實施 例，兩者都使用石英玻璃。 詳細地說明，絕緣支撐體1 0是互相地管軸方向的全長 度不相同的5種類絕緣管1021a、 1022a、 1023a、 1024a、 1025a與絕緣管 l〇21b、 1022b、 1023b、 1024b、 1025b的兩 組（亦即，合計爲1 0支絕緣管，爲如下地，配置於中心構 件101的側面。亦即，5支絕緣管1021a、1 022a、1 023 a、 1 0 24a、1 02 5 a所形成的第1組，爲各該端部在與中心構件 101的一端面同一平面上位於同一圓周上，而且與中心構 件1 〇 1互相平行地沿著管軸地配置於中心構件1 0 1的側面上 的狀態下，藉由接觸於各該側面而捲繞有環狀緊固構件 1 0 3 a，一體地被固定於中心構件丨〇 i。作成同樣地，5支絕 緣管 1021b、 1022b、 l〇23b、 1024b、 1025b所形成的第 2組 -31 - 200847227 ，爲各該端部在與中心構件1 〇 1的另一端面同一平面上位 於同一圓周上，而且與中心構件1 0 1互相平行地沿著管軸 地配置於中心構件1 0 1的側面上的狀態下，藉由接觸於各 該側面而捲繞有環狀緊固構件1 〇3b，一體地被固定於中心 構件1 0 1。 又，配設於中心構件1 0 1的側面上的1 0支絕緣管，是 第 1組的各該絕緣管 1021a、1022a、1023a、1024a、1025a 與第2組的各該絕緣管l〇21b、1 022b、1 023b、1 024b、 1 025 b，爲在管軸方向隔著相當於燈絲41 1、421、431、 44 1、45 1的全長度的間隙（燈絲配設部）相對向，而且相 對向的第1組的絕緣管1 0 2 1 a、1 0 2 2 a、1 0 2 3 a、1 0 24 a、 1025a與第 2組的絕緣管 l〇21b、 1022b、 1023b、 1024b、 1 025b的管軸方向的全長度總和，在各該相對向部位配置 成均等。亦即以位於紙面正前方的絕緣管作爲基準時，在 絕緣支撐體1 〇的順時鐘方向中。第1組的全長度最短的絕 緣管1021a與第2組的全長度最長的絕緣管1〇21b，第1組的 全長度第2短的絕緣管1 0 2 2 a與第2組的全長度第2長的絕緣 管1 022b，第1組的全長度中間的絕緣管1〇2 3 a與第2組的全 長度中間的絕緣管1 023b，第1組的全長度第2長的絕緣管 1 0 24a與第2組的全長度第2短的絕緣管i〇24b，第1組的全 長度最長的絕緣管1 〇 2 5 a與第2組的全長度最短的絕緣管 1 025 b，以該順序，在各該管軸方向隔著相當於燈絲41 1、 42 1、43 1、44 1、45 1的全長度的間隙相對向。 如此地，1 0 支絕緣管 1 〇 2 1 a、1 〇 2 2 a、1 〇 2 3 a、1 0 2 4 a、 -32- 200847227 1025a、 1021b、 1022b、 1023b、 1024b、 1025b配置於中心 構件1 0 1的側面的絕緣支撐體1 ο，是在管軸方向存在於相 對向的1對絕緣管之間的間隙所成的5部位的燈絲配設部， 在管軸方向形成依次地排列。 又，在第7圖中，全長度不相同的第1組的5種類絕緣 管 1021a、 1022a、 1023a、 1024a、 1025a，以位於紙面正 前方的絕緣管作爲基準時，在絕緣支撐體1 〇的順時鐘方向 ，絕緣管的管軸方向的全長度依次變大般地配置於中心構 件1 0 1的側面，惟並不一定被限定於該構成者。與此相反 地，全長度不相同的第1組的5種類絕緣管，以位於紙面正 前方的絕緣管作爲基準時，在絕緣支撐體1 0的順時鐘方向 ，絕緣管的管軸方向的全長度依次變小般地配置於中心構 件1 0 1的側面也可以。又，全長不相同的5種絕緣管隨著地 配置在中心構件1 0 1的側面也可以。 又，不需要中心構件1 0 1，僅藉由複數絕緣管也可構成絕 緣支撐體1 〇。 燈絲體41、42、43、44、45，是與表示於第2圖至第5 圖所示者同樣地，使用著由水平導線部4 1 2 2 a、4 2 2 2 a、 4322a、4422a、4522a、4122b、4222b、4322b、4422b、 4522b與垂直導線部 4121a、 4221a、 4321a、 4421a、 4521a 、4121b、 4221b、 4321b、 4421b、 4521b所構成的鈎狀導 線 412a、 422a、 432a、 442a、 452a、 412b、 422b、 432b、 442b、452b。各該燈絲體41、42、43、44、45，是對於各 該燈絲411、421、431、441、451有絕緣支撐體10的中心 -33- 200847227 構件1 0 1配置於同軸上的狀態下，如下地安裝於絕緣支撐 體1 0，而不會互相短路地藉由絕緣支撐體1 〇被支撐。 詳細地說明’被連接於燈絲4 1 1、42 1、43 1、44 1、 451的一端的一方的導線 412a、422a、432a、442a、452a ，是水平導線部 4122a、 4222a、 4322a、 4422a、 4522a的 前端，從絕緣管 l〇21a、 1022a、 1023a、 1024a、 1025a的 另一端側朝一端側貫通，而從絕緣管l〇21a、1 022a、 1 023 a、1 024a、1 025a的一端側突出而被拉出成朝管軸方 向延伸，又，藉由令垂直導線部4121a、4221a、4321a、 442 1 a、452 1 a朝管軸正交方向延伸，在燈絲41 1、421、 431、441、451 未抵接於絕緣管 1021a、1022a、1023a、 1 024a、1 02 5 a的狀態下，被安裝於絕緣支撐體10。被連接 於燈絲4 1 1、4 2 1、4 3 1、4 4 1、4 5 1的另一端的另一方的導 線 412b、422b、43 2b、442b、452b，是水平導線部 4122b 、4222b、4322b、4422b、4522b的前端，從絕緣管 1021b 、1022b、 1023b、 1024b、 1025b的一端側朝另一端側貫通 ，而從絕緣管 l〇21b' 1022b' 1023b' 1024b' 1025b的另 一端側突出而被拉出成朝管軸方向延伸，又，藉由令垂直 導線部4121b、 4221b、 4321b、 4421b、 4521b朝管軸正交 方向延伸，在燈絲411、421、431、441、451未抵接於絕 緣管 1021b、 1022b、 1023b、 1024b、 1025b的狀態下，被 安裝於絕緣支撐體1 〇。被連接於各該燈絲體4 1、42、43、 44、45的各該導線，是藉由分別通過各該絕緣管，不會互 相地短路。 -34- 200847227 又，依照本實施形態的發明的白熾燈1，基本上，可 期待與第1實施形態的發明的白熾燈1同樣的效果’而且可 將絕緣支撐體1 0的製造容易地進行第1實施形態的發明的 白熾燈1的絕緣支撐體9以上之故，因而可減低絕緣支撐體 的製造上所需要的費用。 以下，使甩第8圖來說明本發明的第3實施形態。 第8圖是表示本實施形態的發明的白熾燈1的燈絲體4 1 、4 2、4 3、4 4、4 5，與絕緣支撐體1 2所形成的發光部的構 成的立體圖。本實施形態的發明的白熾燈1，是代替表示 於第1圖的燈絲體與絕緣支撐體所形成的發光部’而藉由 適用表示於第8圖的燈絲體與絕緣支撐體所形成的發光部 成爲可能。 如同圖所示地，白熾燈1的燈絲體與絕緣支撐體所構成 的發光部，是除了使用具備沿著管軸互相地延伸，而且朝 燈絲體4 1、4 2、4 3、4 4、4 5的徑方向放射狀地擴展的區劃 壁1221、1 222、1 223、1224、1 225的構成的絕緣支撐體12之 外，還具有與表示於第2圖的構成同樣的構成。 絕緣支撐體12是具備：徑方向的斷面形成圓狀而連續 於沿著管軸延伸的中央部1 2 1的朝周方向互相地離開而沿著 管軸延伸，而且朝燈絲4 1 1、4 2 1、4 3 1、4 4 1、4 5 1的徑方向 放射狀地延伸的複數區劃壁1 2 2 1、1 2 2 2、1 2 2 3、1 2 2 4、1 2 2 5 的構成。此種絕緣支撐體1 2是具備與藉由鄰接的一對區劃壁 1221、1222、與中央部121，鄰接的一對區劃壁1222、1223 、與中央部121，鄰接的一對區劃壁1 223、1 224、與中央部 -35- 200847227 121，鄰接的一對區劃壁1224、1 225、與中央部121，鄰接的 一對區劃壁1 225、1221、與中央部121，所形成的燈絲體的 個數同數的導線配設部，而連結複數區劃壁1 22 1、1 222、 1 223、1 224、1 225的頂點所形成的假想圓的直徑與燈絲直 徑大致一致絕緣支撐體12是例如對於石英玻璃等所構成的 棒狀絕緣材料施以切削加工，或對於成形模流進經熔融的 石英玻璃之後藉由冷卻熔融液，可作成所期望的形狀。 各該燈絲體41、42、43、44、45，是對於各該燈絲 411、421、431、441、451在同軸上配置有絕緣支撐體12 的中央部1 2 1的狀態下，被連接於各該燈絲4 1 1、42 1、43 1 、441、451的一對導線41 2a與導線412b、導線422a與導線 422b、導線43 2a與導線432b、導線442a與導線442b、及導 線452a與導線452b的雙方，個別地配設於同一導線配設領 域，不會互相地短路般地安裝於絕緣支撐體1 2。燈絲體4 1 、42、43、44、45的構成是與表示於第2圖至第6圖者同樣 地所構成。 詳細地說明，被連接於燈絲41 1、421、43 1、441、 451 的一端的一方的導線 412a、422a、43 2a、442a、452a ，是垂直導線部 4121a' 422 1 a ^ 43 2 1 a ^ 442 1 a ^ 4521a 朝 中央部1 2 1延伸成管軸方向，而且被配置於鄰接的一對區 劃壁之間的導線配設領域的水平導線部4122 a、4222a、 4322a、4422a、4522a的一端配置成從絕緣支撐體12的一 端突出而沿著管軸延伸。被連接於燈絲4 1 1、4 2 1、4 3 1、 441、451的另一端的另一方的導線412b、422b、432b、 -36- 200847227 442b、 452b，是垂直導線部 4121b、 4221b、 4321b、 4421b 、4521b朝中央部121延伸成管軸方向，而且被配置於隔著 相當於燈絲41 1、421、431、441、451的全長度的間隙而 與一方的導線412a、 422a、 432a、 442a、 452a同一的導線 配設領域的水平導線部4122b、4222b、4322b、4422b、 4522b，沿著管軸而與區劃壁1221、 1222、 1223、 1224、 1 225平行地延伸該當導線配設領域，另一端配置成從絕緣 支撐體12的另一端突出而延伸。 如上所述地，基本上，本實施形態的發明的白熾燈1 ，是可期待與第1實施形態的發明的白熾燈1同樣的效果， 而且對於設在絕緣支撐體12的區劃壁1221、1 222、1 223、 1 2 2 4、1 22 5，抵接有燈絲 41 1、421、43 1、441、4 5 1 而被 支撐之故，因而可將燈絲411、421、431、441、451高精 度地配置於所期望的位置，而且可避免燈絲4 1 1、42 1、 43 1、44 1、451朝垂直方向下垂的情形。 以下，使用第9圖及第1 0圖來說明本發明的第4實施形 態。 第9圖是表示本實施形態的發明的光照射式加熱處理 裝置的前視斷面圖。第10圖是表示圖示於第9圖的第1燈單 元及第2燈單元的構成的俯視圖。本實施形態的發明的光 照射式加熱處理裝置1 〇〇，是裝載從第1實施形態至第3實 施形態的發明的任一白熾燈1所構成。 如第9圖所示地，該光照射式加熱處理裝置1 00，是具 有利用石英玻璃1 01被分割成燈單元收容空間s 1與加熱處 -37- 200847227 理空間S2的腔102。藉由將從配置於燈單元收容空間S1的 第1燈單元103及第2燈單元104所放出的光，經由石英窗 1〇1被照射在被設置於加熱處理空間S2的被處理體105，就 可施行被處理體1 〇 5的加熱處理。 被收容於燈單元收容空間S1的第1燈單元103與第2燈 單元1 04，是例如，將1 0支各該白熾燈1以所定間隔並排地 配置所構成，配置成互相相對向的情形。如第9圖所示地 ，構成第1燈單元1 03的白熾燈1的管軸方向，是配置成交 叉於構成第2燈單元1 04的白熾燈1的管軸方向。又，並不 定如第9圖所示地配設兩段的燈單元，而僅具備1段的燈單 元也可。 在第1燈單元103的上方配置有反射鏡106。反射鏡106 是例如在無氧銅所構成的母材塗上金的構造，而反射斷面 具有圓的一部分，橢圓的一部分，拋物線的一部分或平板 狀等的形狀。反射鏡106是將從第1燈單元103及第2燈單元 1 04朝上方照射的光反射至被處理體1 〇 5側。亦即，從第1 燈單元103及第2燈單元104所放出的光，是直接或在反射 鏡106被反射，而被照射於被處理體1〇5。 在燈單元收容空間S 1 ’從設於腔1 02的冷卻風供應噴 嘴108的吹出口 109被導進來自冷卻風單元107的冷卻風。 被導入於燈單元收容空間S 1的冷卻風，是被噴在第1燈單 元1 0 3及第2燈單元1 〇 4的各白熾燈1，俾冷卻構成各白熾燈 1的發光管。在此，各白熾燈1的封閉部是耐熱性比其他部 位還低。所以，冷卻風供應噴嘴1 0 8的吹出口 1 〇 9是相對向 -38- 200847227 於各白熾燈1的封閉部所配置，構成優先地冷卻各白熾燈1 的封閉部較佳。 噴在各白熾燈1而利用熱交換成爲高溫的冷卻風，是 從設於腔1 02的冷卻風排出口 1 1 0被排出。又，冷卻風的流 動，是考慮到被熱交換成爲高溫的冷卻風不會相反地加熱 各白熾燈1。上述冷卻風是也可同時地冷卻反射鏡1 06般地 設定風的流動。又，若反射鏡1 0 6利用省略圖不的水冷機 構被水冷時，則並不一定也可同時地冷卻反射鏡1 06般地 設定風的流動也可以。 可是，利用來自被加熱的被處理體1 05的輻射熱，在 石英窗1 0 1發生儲熱。利用從被儲熱的石英窗1 0 1次級性地 放射的熱線，被處理體1 0 5是會受到不期望的加熱作用。 這時候，會發生被處理體1 05的溫度控制性的冗長化（例 如，被處理體105的溫度比設定溫度成爲還高溫的超越量 )，或起因於被儲熱的石英窗1 〇 1本體的溫度偏差的被處 理體1 05的降低溫度均勻性等的不方便。又，成爲難以提 高被處理體1 〇 5的降溫速度。因此，爲了抑制此些的不方 便，將如第9圖所示的冷卻風供應噴嘴108的吹出口 109也 設在石英窗101附近，而利用來自冷卻風單元107的冷卻風 俾冷卻石英窗1 0 1較佳。 第1燈單元1 03的各白熾燈1是利用一對第1固定台1 1 1 、：Π2所支撐。第1固定台111、112是由以導電性構件所形 成的導電台1 1 3，及以陶瓷等的絕緣構件所形成的保持台 114所構成。保持台114是設於腔102的內壁而保持著導電 -39- 200847227 台1 1 3。將構成第1燈單元1 03的白熾燈1的支數作爲n i，而 將白熾燈1所具有燈絲體的個數作爲m 1，若電力獨立地供 應各燈絲體全部時，則一對第1固定台1 1 1、1 1 2的組數是 成爲nl xml組。一方面，第2燈單元104的各白熾燈1，是利 用第2固定台所支撐。第2固定台是與第1固定台1U、n2 同樣，由導電台、保持台所構成。將構成第2燈單元i〇4的 白熾燈1的支數作爲η 2，而將白熾燈1所具有燈絲體的個數 作爲m2，若電力獨立地供應各燈絲體全部時，則一對第2 固定台的組數是成爲η 2 X m 2組。 在腔1 02，設有來自電源部1 1 5的饋電裝置的饋電線所 連接的一對電源供應埠116、117。又，在第9圖中表示有1 組的電源供應埠1 1 6、1 1 7，惟因應於白熾燈1的個數，各 白熾燈1內的燈絲體的個數等，電源供應埠的個數是被決 定。第9圖中，電源供應埠116、117是與第1燈固定台111 、1 1 2的導電台1 1 3電性地連續。第1燈固定台1 1 1、1 1 2的 導電台1 1 3是例如與外部導線電性地連接。利用如此地構 成，成爲可從電源部1 1 5的饋電裝置，饋電至第1燈單元 1 〇3的1個白熾燈1的燈絲體。又，針對於白熾燈1的其他燈 絲體，又，第1燈單元103的其他白熾燈1的各燈絲，第2燈 單元1 04的各白熾燈1的各燈絲，也由其他的一對電源供應 埠，分別施以同樣的電性連接。 又，在加熱處理空間S2，設有固定被處理體1〇5的處 理台1 1 8。例如，被處理體1 0 5爲半導體晶圓時，處理台 1 1 8是如鉬，或鎢、鉅的高融點金屬材料或碳化矽（Si C ) -40- 200847227 等的陶瓷材料，或石英、砂（S i )所形成的薄板的環狀體 ，爲形成爲將半導體晶圓支撐於其圓形開口部的內周部的 階段差部的護環構造較佳。被處理體1 〇5的半導體晶圓’ 是配置成將半導體晶圓嵌入在上述圓環狀護環的圓形開口 部，而在上述階段差部被支撐。處理台1 1 8是本身也藉由 光照射而成爲高溫，俾相助性地放射加熱相對的半導體晶 圓的外周緣，俾補償來自半導體晶圓的外周緣的熱放射。 藉由此起因於來自半導體晶圓的外周緣的熱放射等的半導 體晶圓周緣部的溫度降低。 在被設置於處理台1 1 8的被處理體1 05的光照射面的背 面側，溫度測定部11 9抵接或近接地配置於被處理體1 05。 溫度測定部1 19是用以監控被處理體105的溫度分布者，因 應於被處理體1 05的尺寸來設定個數、配置。溫度測定部 1 1 9是例如使用著熱電偶或放射溫度計。利用溫度測定部 1 19被監控的溫度資訊，是發訊到溫度計120。溫度計120 是依據利用各溫度測定部1 1 9所發訊的溫度資訊，來算出 各溫度測定部Π 9的測定地點的溫度，而且將所算出的溫 度資訊經由溫度控制部1 2 1發訊至主控制部1 22。主控制部 122是依據被處理體105上的各測定地點的溫度資訊，把被 處理體1 05上的溫度作成在所定溫度成爲均勻般地將指令 發訊至溫度控制部1 2 1。溫度控制部1 2 1是依據該指令，俾 控制從電源部1 1 5被供應至各白熾燈1的燈絲體的電力。例 如，主控制部1 22是從溫度控制部1 2 1得到某一測定地點的 溫度比所定溫度還低的溫度資訊時，則增加從近接於該當 -41 - 200847227 測定地點的發光部所放射的光般地，對溫度控制部1 2 1發 訊指令成爲增加對於該當燈絲體的饋電量。溫度控制部 1 2 1是依據從主控制部1 2 2所發訊的指令，增加從電源部 1 1 5供應於被連接於該當燈絲體的電源供應埠1 1 6、1 1 7的 電力。 主控制部122是第1及第2燈單元103、104的白熾燈1的 點燈中。利用將指令發訊至冷卻風單元1 07，作成發光管 、石英窗1 〇 1不會成爲高溫狀態。又，因應於加熱處理的 種類，在加熱處理空間S2，連接將處理氣體予以導入、排 氣的處理氣體單元1 23也可以。例如進行熱氧化處理時， 在加熱處理空間S2連接導入、排氣氧氣體，及用以沖洗加 熱處理空間S2的沖洗氣體（例如氮氣體）的處理氣體單元 。來自處理氣體單元1 23的處理氣體、沖洗氣體是從設於 腔102的氣體供應噴嘴124的吹出口 125被導入到加熱處理 空間S2。又，排氣是從排氣口 126所進行。 依照如上述本發明的光照射式加熱處理裝置1 〇〇，可 發揮如下效果。在被裝載於光照射式加熱處理裝置1 〇〇的 光源部的燈單元1 03、1 04的白熾燈1，於發光管內部配置 有表示在第1實施形態至第3實施形態的燈絲體與絕緣支撐 體所構成的發光部，可個別地調整饋電至燈絲之故’因而 上述光強度分布的設定是針對於發光管的軸方向也可調整 。因此，被處理體1 〇5表面的放射照度分布’也成爲在二 維方向可高精度地設定。例如對於全長度比使用習知的光 照射式加熱處理裝置的光源部的白熾燈的發光長度還短的 -42- 200847227 窄小特定領域（如第1 〇圖所示的領域1 )，也可限定於該 特定領域（領域1 )，而可設定該特定領域（領域1 )上的 放射照度。亦即，在該特定領域（領域1 )與其他領域（ 如第1 0圖所示的領域2 )中，成爲可設定對應於各該特性 的放射照度分布。因此，成爲可控制成上述特定領域（領 域1 )及其他領域（領域2 )的溫度變成均勻。同樣地，抑 制場所性溫度分布發生在被處理體1 05，而成爲在被處理 體105全體全面地可得到均勻的溫度分布。 又，在本發明的光照射式加熱處理裝置，使用可將配 置於發光管內的各燈絲彼此間的離間距離作成極小的白熾 燈1之故，因而可減小未發光的各燈絲間的離間部的影響 ，而可將被處理體1 〇5上的照度分布的不期望的參差不齊 作成極小。又，在光照射式加熱處理裝置1 〇 〇的高度方向 也可減小配設複數管狀的白熾燈1所形成的燈單元1 03、 1 04的空間之故，因而可將光照射式加熱處理裝置作成小 型化。 而且，依照被裝載於該光照射式加熱處理裝置的白熾 燈1，如在第1實施形態至第3實施形態的發明的白熾燈1中 所說明，利用被配設於燈絲的各該內側的絕緣支撐體’該 當燈絲以外的其他的燈絲的各該導線不會互相短路而被支 撐之故，因而即使在發光管內部配設有複數燈絲體的構成 ，也不會在燈絲的外側配置導線，而容易確保各該導線間 的絕緣的情形下’藉由導線不會遮住來自燈絲的放射光’ 而可得到所期望的光放射照度分布。 -43 - 200847227 又’在本發明的光照射式加熱處理裝置中，針對於將 並聯地配置有複數白熾燈1所構成的燈單元103、104使用 作爲加熱用光源的情形加以說明，惟並不一定構成燈單元 ，而藉由單一的白熾燈1來構成光源部者也可以。 又，在本發明光照射式加熱處理裝置中，被加熱處理 的被處理體1 05，是並不被限定於半導體晶圓者，例如也 可適用於太陽電池面板用的多晶矽基板或玻璃基板或陶瓷 基板、液晶顯示用的玻璃基板等。 尤其是，在太陽電池面板用的各種材質的基板多用四 方形基板，而被使用於此種被處理體的加熱處理的光照射 式加熱處理裝置的大部分，是一面水平移動四方形基板， 一面藉由管軸朝與基板移動方向正交的方向延伸般地所配 置的單一白熾燈，或是藉由各該管軸朝與基板移動方向正 交的方向延伸般地所排設的複數支白熾燈，而作爲照射帶 狀的光執行加熱處理的構成。在此種情形，藉由使用配設 有4個以上的燈絲體的本發明的白熾燈1，補償平行於基板 的移動方向的兩邊部（帶狀的兩端部）的溫度降低，就可 調整基板中央部（帶狀的中央部）的放射照度分布之故， 因而可確實地執行更高精度的溫度控制。 【圖式簡單說明】 第1圖是表示第1實施形態的發明的白熾燈1的構成的立 體圖。 第2圖是表示圖示於第1圖的白熾燈1的燈絲體4 1、42、 -44- 200847227 43、44、45與絕緣支撐體9所形成的發光部的構成的局部 立體圖。 第3圖是表不錯由圖不於第2圖的A-A’線朝管軸方向切 斷白熾燈1的燈絲體41、42、43、44、45與絕緣支撐體9所 形成的發光部的構成的局部斷面圖。 第4圖是表示與圖示於第3圖的燈絲體41、42、43、44 、4 5及絕緣支撐體9所形成的發光部的構成不相同的燈絲 體41、42、43、44、45及絕緣支撐體9所形成的發光部的 構成的局部斷面圖。 第5 (a)圖及第5(b)圖是表示與圖示於第3圖的燈 絲體41、42、43、44、45是絕緣支撐體9所形成的發光部 構成不相同的白熾燈體41、42、43、44、45及絕緣支撐體 9所形成的發光部構成的局部前視圖及局部斷面圖。 第6 (a)圖及第6(b)圖是表示與圖示於第3圖的燈 絲體41、42、43、44、45是絕緣支撐體9所形成的發光部 構成不相同的白熾燈體4 1、4 2、4 3、4 4、4 5及絕緣支撐體 9所形成的發光部構成的局部立體圖及局部斷面圖。 第7圖是表示第2實施形態的發明的白熾燈1的燈絲體 41、42、43、44、45與絕緣支撐體10所形成的發光部的構 成的立體圖。 第8圖是表示第3實施形態的發明的白熾燈1的燈絲體 41、42、43、44、45與絕緣支撐體12所形成的發光部的構 成的立體圖。 第9圖是表示第4實施形態的發明的光照射式加熱處理 -45- 200847227 裝置的前視斷面圖。 第1〇圖是表示圖示於第9圖的第1燈單元103及第2燈單 元104的構成的俯視圖。 第1 1圖是表示習知技術的加熱處理裝置200的斷面圖 〇 第12圖是表示將圖示於第11圖的加熱處理裝置200予 以簡化而取出設於上下兩段的加熱用白熾燈203、204與被 處理體202的立體圖。 第1 3圖是表示習知技術的熱處理裝置3 0 0的斷面圖。 第14圖是表示本件申請人先前所提案的白熾燈400的 立體圖。 【主要元件符號說明】 1 :白熾燈，2a、2b :封閉部，3 :發光管，41、42、 4 3、44、45:燈絲體，411、421、431、441、451:燈絲 ，411a、 411b、 421a、 421b、 431a、 431b、 441a、 441b、 4 5 1a、451b ：燈絲，412、422、43 2、442、452 ：導線， 412a、 422a、 432a、 442a、 452a ：導線，412b、 422b、 432b、 442b、 452b ：導線，4121a、 4221a、 4321a、 4421a 、4521a ：垂直導線部，4121b、 4221b > 4321b、 4421b、 4521b:垂直導線部，4122a、 4222a、 4322a、 4422a、 4522a:水平導線部，4122b、 4222b、 4322b、 4422b、 45 22b ：水平導線部，5a、5b :封閉用絕緣體，61a、62a 、63a、 64a、 65a:金屬箱，61b、 62b、 63b、 64b、 65b ： -46- 200847227 金屬箔，71a、72a、73a、74a、75a:外部導線，71b、 72b、73b、74b、75b ：外部導線，81 a、82 a、83 a、84a、 85a:導電性構件，81b、82b、83b、84b、85b:導電性構 件，9 :絕緣支撐體，91、92、93、94、95 :通路，91 1、 921、931、941、95 1 ··水平通路，911a、921a、931a、 941a、 951a：水平通路，911b、 921b、 931b、 941b、 951b ：水平通路，912a、 922a ' 932a' 942a > 952a ：垂直通路 ，912b、922b、932b、942b、9 5 2b ：垂直通路，913a、 923a、 933a、 943a、 953a ：導出口 ， 913b、 923b、 933b、 943b、 953b ：導出口 ， 913c、 923c、 933c、 943c、 953c ： 導出口 ， 913d、 923d、 933d、 943d、 953d ：導出口 ， 961 、962、963、964、965 ：水平開口溝，961a、962a、963 a 、964a、96 5 a ：水平開□溝，961b、962b、963a、964a、 965a:水平開口溝，961b、 962b、 963b、 964b、 965b:水 平開口溝，9 7 a、9 7b :絕緣支撐體支撐環，i 〇 :絕緣支撐 體，101 :中心構件 ’ 1021a、1022a、1023a、1024a、 1025a:絕緣管，1021b、 l〇22b、 1023b、 1024b、 1025b: 絕緣管’ l〇3a、103b :緊固構件’ 12 :絕緣支撐體，i21 :中央部，1221、 1222、 1223、 1224、 1225:區劃壁， 1 〇 〇 :光照射式加熱處理裝置，1 〇 1 :石英窗，；[〇 2 :腔， 103:第1燈單元，104:第2燈單元，105:被處理體，1〇6 :反射鏡，1 0 7 :冷卻風單元，丨〇 8 :冷卻風供應噴嘴， 109:吹出口，110:冷卻風排出口，ηι、112:第1固定 台，1 1 3 :導電台，1 14 :保持台，i丨5 :電源部，i丨6、 -47- 200847227 1 1 7 :電源供應埠，1 1 8 :處理台，1 1 9 :溫度測定部，1 20 :溫度計，12 1 :溫度控制部，122 :主控制部，123 :處 理氣體單元，124:氣體供應噴嘴，125:吹出口，126: 排出口，S 1、S 2 :燈單元收容空間。 - 48-200847227 IX. [Technical Field] The present invention relates to an incandescent lamp and a light irradiation type heat treatment device, In particular, it relates to an incandescent lamp used for heating a target object and a light irradiation type heat treatment device using an incandescent lamp.  [Prior Art] In general, In semiconductor manufacturing engineering, In film formation, Oxidation, Nitriding,  Membrane stabilization, Phthalate, Crystallization, Various processes such as ion implantation activation, Heat treatment is used. In order to improve the yield or quality of the semiconductor process, the rapid heat treatment (RTP is performed to rapidly increase or decrease the temperature of the object to be processed such as a semiconductor wafer.  Rapid Thermal Processing) is preferred. In RTP, A light irradiation type heat treatment device that uses light from a light source such as an incandescent lamp (hereinafter, Also referred to simply as a heat treatment device, it is widely used.  An incandescent lamp made of a filament is arranged inside the arc tube formed by the light transmissive material. More than 90% of the connected power is fully emitted. It can be heated without touching the object to be treated. Thus, it is a representative lamp that can utilize light as heat. When such an incandescent lamp is used as a heat source for heating a glass substrate or a semiconductor wafer, Compared with the resistance heating method, The temperature of the treated body can be raised and lowered at high speed. that is, According to the light irradiation type heat treatment, For example, the treated body can be heated to a temperature above 1 000 °C in a few seconds to tens of seconds.  After the light irradiation is stopped, the irradiated body is rapidly cooled.  here, When the object to be processed is, for example, a semiconductor wafer (tantal wafer), In -4-200847227, if the temperature of the semiconductor wafer is not uniform after heating the semiconductor wafer to more than 10.5t, Then a phenomenon called slip _ (glip) occurs on the semiconductor wafer. that is, Defects in crystallization transfer, And there is a flaw in becoming a defective product. and so, When the RTP of the semiconductor wafer is performed using the light irradiation type heat treatment device, The uniform temperature distribution of the semiconductor wafer is made uniform. Must perform heating, Keep high temperature, cool down. that is, At RTP, When dealing with the object being processed, High precision temperature uniformity is required.  In the light irradiation type heat treatment, For example, when the overall physical characteristics of a semiconductor wafer are uniform, Even if the overall irradiance of the semiconductor wafer is uniformly performed, The temperature distribution of the semiconductor wafer will not become uniform. The temperature at the periphery of the semiconductor wafer becomes lower. this is, In the peripheral portion of the semiconductor wafer, Radiation is radiated from the side of the semiconductor wafer. When this heat is released, A non-uniform temperature distribution is produced at the semiconductor wafer. As mentioned above,  When the semiconductor wafer is heated to above 1 〇 50 °C, If the temperature distribution is uneven on the semiconductor wafer, Then the semiconductor wafer will slip.  therefore, It is intended to make the temperature distribution of the semiconductor wafer uniform, In order to compensate for the temperature drop caused by heat radiation from the side of the semiconductor wafer, etc., The irradiance of the peripheral surface of the crystal, A method of making the radiation larger than the surface of the central portion of the wafer, It is preferable to perform light irradiation.  As a conventional heat treatment device, In Patent Document 1, It is disclosed that the light emitted from the incandescent lamp is used in a heat treatment device for heating a glass substrate or a semiconductor wafer.  Fig. 1 is a cross-sectional view showing a heat treatment apparatus 200 of a conventional technique as disclosed in Patent Document 1. As shown in the picture, The heat treatment device 200 200847227 accommodates the object to be processed 202 in a cavity 201 formed of a light transmissive material.  And a plurality of heating incandescent lamps 2 0 3 are disposed on the upper and lower sides of the cavity 20 1 so as to face each other up and down. 2 0 4 ', and by this heating incandescent lamp 2 0 3, 2 0 4 is composed of two surfaces of light to heat the object to be treated 2 0 2 .  Fig. 1 is a view showing a heating incandescent lamp 2 0 3 which is provided in the upper and lower stages of the heat treatment apparatus shown in Fig. 1 . A perspective view of the 2 0 4 and the object to be processed 2 0 2 taken out. As shown in the picture, Heating incandescent lamps set in the upper and lower sections 2 0 3, 2 0 4, It is configured such that the tube axes can be crossed. Thus, the object to be processed 2 0 2 can be uniformly heated. also, According to the device, It is possible to prevent a temperature drop due to the heat dissipation action of the peripheral portion of the object to be treated 220. For example, for the object to be processed 202, Heating incandescent lamp L 1 at both ends of the upper section,  The lamp output of L2 is set to be larger than the lamp output of the heating incandescent lamp L3 at the center. The heating incandescent lamp L4, which will be located at both ends of the lower section, The lamp output of L5 is set to be larger than the lamp output of the heating incandescent lamp L6 at the center. By this, the amount of temperature reduction due to the heat dissipation effect of the peripheral portion of the object to be processed 202 is compensated, The temperature difference ′ between the central portion and the peripheral portion of the object to be treated 2 0 2 can be made uniform, and the temperature distribution of the object to be processed 202 can be made uniform.  but, The conventional heat treatment device has been found to have a problem such as T. Specifically, E.g, When the object to be processed 2 0 2 is a semiconductor wafer, a film formed by forming a metal oxide or the like on the surface of the semiconductor wafer by sputtering is generally used. Or by implanting ions doped with an impurity additive. In the film thickness of such a metal oxide or the density of impurity ions, Will have a local distribution on the wafer surface. Such a local distribution, It is not necessarily central symmetry for the center of the semiconductor wafer. Taking the impurity ion density as an example of -6 - 200847227, Then for example, As shown in Figure 12, In the case where the narrow specific area 202 1 which is not centrally symmetric with respect to the center of the semiconductor wafer and the other areas 20 22 have different impurity ion densities. Even for this particular field 2〇2 1 and other areas 2022 light irradiation becomes the same irradiance, In a specific field 202 1 with other fields 2022, There is also a difference in the rate of temperature rise, and the temperature of the specific field 202 1 does not necessarily coincide with the temperature of the other field 2022. 依照 In accordance with the above-described conventional heat treatment device 200, The compensation prevents the temperature in the peripheral portion from decreasing due to the influence of the temperature drop of the heat radiation in the peripheral portion of the object to be processed 022. It is easier to make the temperature distribution of the object to be treated 202 uniform. however, For example, as shown in Figure 12, A narrow specific area of a semiconductor wafer that is shorter than the full length of the lamp. When light irradiation is performed with light intensity corresponding to the characteristic of the specific field 202 1 It also illuminates the field 2022 outside the specific field 202 1 . and so, It is not possible to cause a particular field 2 02 1 and other fields 2022 to be controlled to an appropriate temperature state. that is,  For example, the temperature of both of them cannot be uniformly controlled to control the illuminance of the narrow specific area 202 1 . therefore, The processing temperature of the object to be processed 202 becomes an undesired temperature distribution. After the light is heated, A problem that it is difficult to impart desired physical properties to the object to be processed 202 occurs.  Fig. 13 is a cross-sectional view showing the heat treatment apparatus 300 shown in Patent Document 2. As shown in the picture, The heat treatment apparatus 300 is provided with: In the light room 301, The double-ended lamp 3 022 provided in the U-shape and provided on the both ends of the arc tube with the feeding means for the filament 301 is arranged in a plurality of first lamp units 322 arranged in the direction parallel to the paper surface and in the vertical direction. And a plurality of double-ended ends of the light-emitting device disposed on the lower side of the first lamp 200847227 unit 322 and having a linear shape for the filament 303 1 arranged along the paper surface in the direction perpendicular to the paper surface at both ends of the light-emitting tube The second lamp unit 3 03 of the lamp 3 03 2, On the other hand, the object to be processed 304 of the semiconductor wafer or the like disposed under the second lamp unit 303 is heated.  In Patent Document 2, Recorded in the object to be processed 3 04, In order to increase the temperature of the connection portion of the support ring 305 of the object to be processed 304 in order to increase the temperature toward the other portion, A mechanism for controlling the U-shaped lamp belonging to the first lamp unit 312 located above the connecting portion to a high output is provided. also, In Patent Document 2, This heat treatment device 300 describes the use case as follows. First of all, The heating region of the semiconductor wafer of the object to be processed 34 is divided into concentric plural regions by center symmetry. also, Combination according to the first Second light unit 3 02, The illuminance distribution of each lamp of 3 0 3, And forming a centrally symmetric synthetic illuminance distribution pattern for the centers of the semiconductor wafers corresponding to the respective regions, Execution of the heater in response to changes in temperature in each zone. At this moment, In order to suppress the uneven illumination of the light from the lamp, The semiconductor wafer of the object to be processed 34 is rotated. that is, It is a district that is heated and concentrically arranged with individual illuminance.  therefore, It is shown in the heat treatment apparatus 300 of Patent Document 2, It is directed to the case where the narrow specific area of the processed body 404 is center-symmetric with respect to the center of the semiconductor wafer, Then you can control the temperature. but, For a specific area where the center of the semiconductor wafer is not centrally symmetric, Then, the semiconductor wafer of the processed body 34 is rotated, Therefore, the above problem cannot be solved satisfactorily. The heat treatment device 300 is practical, There are problems with the following problems. Specifically, The U-shaped lamp is composed of a horizontal portion 3 023 and a pair of vertical portions 3 024. However, it helps to illuminate only the horizontal portion 3 023 of the filament 3 02 1 , Therefore, each of the lamps is arranged to be separated by a space in which the medium is not negligible. The temperature distribution occurs in the portion immediately below the space.  that is, The heat treatment device 300 is even if the combination corresponds to the first area The second lamp unit 3 02, The illuminance distribution of each of the lamps of 03 is formed to form a symmetric illuminance distribution of the center of the semiconductor wafer. In the portion corresponding to the space below the space, The illuminance also changes (decreased) steeply. therefore, Even if heating is performed in response to temperature changes in each zone, It is intended to reduce the temperature distribution occurring in the portion directly below the above space, Also difficult.  also, The heat treatment device 300 is in recent years, There is a tendency to minimize the space (mainly the height direction) for the lamp unit to be equipped, If you use a U-shaped lamp, Then it becomes a space corresponding to the vertical portion 3 024 of the lamp, Therefore, the viewpoint of small space is less than ideal.  Fig. 14 is a perspective view showing the incandescent lamp 400 of Patent Document 3, which is proposed by the applicant of the present application in order to solve the above problems.  The incandescent lamp 400 is configured as follows. At both ends of the arc tube 401 of the incandescent lamp 400, A closed portion 4 0 3 1 embedded in the metal foils 402 1 to 4024 is formed. 4 0 3 2. In the arc tube 410, Equipped with a filament 4 0 4 1 4 0 5 1 and used to feed the filament 404 1 405 1 wire 4042~4043, 405 2 to 405 3 constitute a plurality of filament bodies 404, 405 (two in Figure 14).  here, Each filament body 404, 405, It is equipped with a plurality of 200847227 in the light-emitting tube 401. Filament 404 1, 405 1 is configured such that the longitudinal direction of the arc tube 401 is arranged in order.  a wire 4 042 connected to one end of the filament 4 0 4 1 of one of the filament bodies 404, It is electrically connected to the metal foil 402 1 of the closing portion 403 1 embedded in one end side of the arc tube 401. also, a wire 4043 connected to the other end of the filament 4041 of one of the filament bodies 404, Is a through hole 409 1 through the insulator 409 The outer side of the portion opposite to the filament 405 1 of the other filament body 405 is covered with an insulating tube 4044. It is electrically connected to the metal foil 4022 of the closing portion 4032 embedded in the other end side of the light-emitting tube 401. Similarly , a wire 4052 connected to one end of the filament 405 1 of the other filament body 405, The metal foil 4023 is electrically connected to the closing portion 4032 embedded in one end side of the arc tube 401. also, The wire 405 3 attached to the other end of the filament 405 1 of the other filament body 405, Is a through hole 4092 through the insulator 409, The outer side of the portion opposite to the filament 404 1 of one of the filament bodies 404 is covered with an insulating tube 40 5 4 . It is electrically connected to the metal foil 4024 of the closing portion 403 1 embedded in one end side of the light-emitting tube 401.  also, Being embedded in the closing portion 403 1 , 4032 metal foil 402 1~ 4024, In connection with the filament 404, 40 5 wires 4042~4043,  405 2 to 405 3 end of the opposite side of the opposite end of the end, Connected with external wires 406 1. 4064 becomes the closed part 404, 405 protrudes toward the outside. therefore,  In each filament body 404, 405 via metal foil 4021~4022 4023~4024 link has two external wires 406 1~4062 4063~4064. Feeder 4071, 4072 is via external wires 4061~4062 4063~4064 are connected to each filament 404 1. 405 1. By this, The incandescent lamp 400 is -10- 200847227 and can be individually fed to each of the filament bodies 404, 405 filament 404 1, 405 1.  also, Each filament 4 0 4 1 4 0 5 1, Is provided by the inner wall of the arc tube 4 0 1 and the insulating tube 4 04 4 The annular pile between 4 0 5 4 is 4 0 8 . It is supported so as not to come into contact with the arc tube 410. here, When the filament is illuminated, When the filament 404 1, 405 1 is in contact with the inner wall of the arc tube 401, Then, the light transmittance of the light-emitting tube 401 of the contact portion is by the filament 404 1 , The heat of 405 1 causes loss of transparency in the light-emitting tube 401. Pull pile 408 is to prevent such a defect. The pull pile 408 is for each filament 404 1 , The 405 1 is provided with a plurality of longitudinal directions of the arc tube 401. also, When making incandescent lamps 400, Making the plurality of filaments 404, 405 is easily inserted into the arc tube 401, The pull rod 40 8 has a certain degree of elasticity. also, In the inner wall of the arc tube 401 and the insulating tube 4044, Between the space between 4054 and the pile 408, Having a certain degree of clearance 〇 the incandescent lamp 400 has a plurality of filaments 404 1 in the arc tube 401,  40 5 1, Individually performing each filament 404 1 The structure of the control of the light emission of 40 5 1 . If a light-irradiating heat treatment apparatus having a light portion in which such incandescent lamps 400 are arranged side by side is used, Then, compared with the case of using an incandescent lamp having a filament in the arc tube as is conventionally used, Corresponding to the illuminated area of the object to be irradiated by light, It is possible to arrange the filaments with high density.  and so, According to the light irradiation type heat treatment apparatus using the incandescent lamp as described above, For a plurality of filaments that can be individually fed, Therefore, even if a specific field on the substrate-shaped object to be processed is asymmetric with respect to the shape of the substrate, It is also possible to perform light irradiation with a desired light intensity for a specific field. Therefore, Even if the temperature of the substrate-like object to be processed which is heat-treated is changed to a position of -11 - 200847227, the distribution of the substrate is asymmetrical. It also becomes a uniform heating of the object to be treated, And the whole body of the treated object is comprehensive, A uniform temperature distribution can be expected.  also, a light irradiation type heat treatment device using an incandescent lamp as described above,  Compared with the light irradiation type heat treatment apparatus using the U-shaped lamp described in Patent Document 2, The incandescent lamp mounted on the light-irradiating heat treatment device can be made into a straight tubular shape. Therefore, there is no need for a space corresponding to the vertical portion of the U-shaped lamp. A miniaturized heat treatment device can be expected.  Patent Document 1: Japanese Patent Laid-Open No. 7-37833 Patent Document 2: Japanese Patent Laid-Open Publication No. 2002-203804 Patent Document 3: [Invention of the Invention] The inventors of the present invention have produced a plurality of light irradiation type in which the incandescent lamp shown in Fig. 4 is mounted in the same specification in accordance with the configuration shown in Fig. 1 of Patent Document 3. Heat treatment device, The plurality of light irradiation type heat treatment devices are activated under the same starting condition. here, Same specification, In the light irradiation type heat treatment apparatus, the number of the filament bodies disposed in the incandescent lamp and the number of the incandescent lamps disposed in the lamp unit are the same. also, In each light irradiation type heat treatment device having the same specification, The arrangement method of the incandescent lamps disposed in each of the lamp units is the same. The same starting condition means that the electric power of each of the incandescent lamps disposed in the lamp unit is the same, In the light irradiation type heat treatment apparatus, the environment of the object to be processed is disposed (for example, the type of gas, The pressure of the gas, etc.) is the same.  -12- 200847227 According to the light irradiation type heat treatment device for loading an incandescent lamp as shown in Fig. 14 By individually controlling the power supplied to each of the filaments, The irradiance distribution on the treated body can be made into a desired distribution. therefore, If each of the light-irradiating heat treatment devices having the same specification is activated under the same starting condition, Then, in each of the objects to be processed which are heat-treated by the respective light irradiation type heat treatment apparatuses, The irradiance distribution should be consistent.  but, In reality, In each of the objects to be processed which are heat-treated by a plurality of light irradiation type heat treatment apparatuses, A problem occurs when the irradiance distribution is uneven. especially, By incandescent lamps equipped with a plurality of filament bodies disposed in the arc tube, In a light irradiation type heat treatment device for achieving high-precision temperature control on a target object, The above problems occur remarkably 〇 The main reasons for this problem are as follows. In recent years, It is required to control the temperature of the object to be processed with high precision, And in order to respond to this requirement, 'As many filaments are placed inside the arc tube, The number of wires disposed inside the arc tube has increased to become more conventional. also, In order to rapidly heat a processed object such as a semiconductor wafer, Being driven by the power of incandescent lamps, that is, It is required to increase the power-on for each unit length of the filament to be conventionally known. With this requirement, Become a must flow high current in the filament, Therefore, the wire becomes high temperature in the lighting and is heated or not melted. The outer diameter of the wire is gradually increased to become conventionally known. From this kind of matter, It is easy to generate a situation in which the light emitted from the filament is blocked by a wire disposed in the light-emitting tube. And the problem as described above will occur.  And in this incandescent lamp, The plurality of wires 13-200847227, which are disposed inside the arc tube, are not short-circuited to each other. Covering each of the wires with an insulating tube, The arrangement of such an insulating tube is also related to the occurrence of the above problems. that is, When lighting an incandescent lamp, By illuminating the emitted light from the filament, This causes the insulating tube to become extremely hot and causes the insulating tube to emit light. If such a state of affairs occurs, Then, in the same state as the new occurrence of the body outside the filament, The possibility of adversely affecting the distribution of irradiance on the treated body is high.  The purpose of the present invention, In view of the above problems, An incandescent lamp and a light-irradiating heat treatment device which are uneven in the distribution of the irradiance on the object to be processed are provided in each of the illuminating treatment devices.  The present invention is to solve the above problems, The following means are employed.  The first means is an incandescent lamp. a long tubular light-emitting tube having a closed portion formed at at least one end thereof, a plurality of filament bodies formed by a filament having a tubular shape and a wire for supplying electric power to the filament, Arranging the filaments in order along the tube axis of the arc tube, Each of the wires of each of the filament bodies is electrically connected to a plurality of the conductive members disposed in the closing portion, and the incandescent lamps are independently fed to the respective filaments. Its characteristics are: Inside the above-mentioned tubular tubular filament, The wires of each of the filament bodies described above are inserted.  The second means is in the first means, On the inside of the above filament, It is provided with an insulating support extending along the central axis of the filament. And when it is necessary to insulate the support body, A plurality of vias are formed for interposing the wires of each of the filament bodies.  The third means is in the first means, The closing portion is provided with a rod-shaped sealing insulator. Further, a plurality of conductive members are arranged at intervals on the outer circumference of the sealing insulator, The arc tube and the sealing insulator are formed to be hermetically sealed by a conductive member.  -14 - 200847227 The fourth means is a light irradiation type heat treatment device, Its characteristics are:  A light source unit including an incandescent lamp according to the first aspect, The light emitted from the light source unit is irradiated onto the object to be processed to heat the object to be processed.  The fifth means is a light irradiation type heat treatment device, Its characteristics are:  A lamp unit formed by arranging a plurality of incandescent lamps according to the first means, The light emitted from the lamp unit is irradiated onto the object to be processed to heat the object to be treated.  According to the invention described in claim 1 of the patent application, On the inside of the filament, Having the wires of each of the filament bodies, Therefore, no wires are arranged on the outside of the filament. Even in the case where a plurality of filament bodies are disposed inside the light-emitting tube,  There is no radiation from the filament that is blocked by the wires. The desired distribution of light irradiance can be obtained.  According to the invention described in claim 2, Even if the insulating support is placed inside the filament, Light is emitted by illuminating the light from the filament when lit, and the light is emitted at a high temperature. Most of the light that is emitted by the light is blocked, and the filament does not radiate to the outside of the lamp. Therefore, the irradiance distribution is not affected. also, The light emitted from the insulating support and passing through the coil gap of the filament is the light radiated from the inside of the filament. Therefore, it is visually equivalent to the fact that the filament is substantially illuminated. There is no adverse effect on the distribution of light irradiance.  According to the invention described in claim 3 of the patent application, A rod-shaped sealing insulator is disposed in the closing portion, Further, a plurality of conductive members are arranged at intervals along the outer circumference of the sealing insulator, The arc tube and the sealing insulator are hermetically sealed between the two via a conductive member, Therefore, in order to perform high-precision temperature control for the body being -15-200847227, Even if a large number of filament bodies are arranged inside the arc tube, Nor does it cause most conductive members to be shorted to each other. It can reduce the size of the closure.  According to the invention described in claim 4 of the patent application, By using the incandescent lamp described in claim 1 of the patent scope, It is possible to realize a light irradiation type heat treatment device in which the irradiance distribution on the object to be processed is uneven in each light irradiation type heat treatment device.  According to the invention described in claim 5, By using the lamp unit constituted by the incandescent lamp of the first application of the patent scope, It is possible to realize a light irradiation type heat treatment device in which the radiation illuminance distribution on the object to be processed is uneven in each of the light irradiation type heat treatment devices.  [Embodiment] A first embodiment of the present invention will be described using Figs. 1 to 6 .  Fig. 1 is a perspective view showing the configuration of the incandescent lamp 1 of the invention of the present embodiment.  As shown in the picture, The incandescent lamp 1 is provided with a closing portion 2a formed at both ends thereof, A long tubular shape of a light transmissive material such as quartz glass of 2b is, for example, a straight tubular light-emitting tube 3. A halogen gas is enclosed in the interior of the arc tube 3, and five filament bodies 41 are disposed. 42, 43. 44. 45, Each of the filament bodies 41, 42, 43. 44. Each of the filaments of the 45-tube tubular shape 41 1 421, 431, 44 1, 45 1 extends side by side in the direction of the tube axis. It is disposed on the outer side of the insulating support 9. Filament body 4 1 4 2 4 3, 4 4, 4 5 is connected to the filament 4 1 1 4 2 1, 4 3 1, 4 4 1, 4 5 1 with the filament body 4 1. 4 2 4 3, 4 4 -16- 200847227 , a wire 412a for feeding at both ends of 45, 422a, 432a, 442a,  452a and wire 412b, 422b, 432b, 442b, 452b constitutes 'depending on the size of the object to be treated, Physical characteristics, etc. are appropriately adjusted. Further, the insulating support body support ring 97a is integrally fixed to the insulating support body 9,  The pusher 97b is pushed toward the inner wall ' of the arc tube 3 so that the insulating support 9 is rubbed inside the arc tube 3.  A sealing insulator 5a formed of a rod-shaped stone glass is disposed at the inner ends of the arc tube 3 near the fang 5 b. Five metal crucibles 61a are arranged in parallel along the longitudinal direction of the sealing insulator 5 a ( 5 b ) on the circumferential surface of one of the sealing insulators 5 a ( 5 b ), 62a, 63a, 64a,  65a (61b, 62b, 63b, 64b, 65b) 〇 each of the metal foils 61a, 62a, 63a,  64a,  65a (61b,  62b,  63b,  64b,  65b) ’ is to avoid bending, The overall length is shorter than the total length of the sealing insulator 5 a ( 5 b ). The number of metal foils is determined by the filament body 41 disposed in the arc tube 3, 42,  43. 44. Increase or decrease by the number of 45, Usually becoming the filament body 41, 42, 43. 44. The number of 45 is twice. In the luminous tube 3, The outer circumference of the arc tube 3 corresponding to the portion where the sealing insulator 5a (5b) is disposed is heated by a burner or the like, Between the arc tube 3 and the sealing insulator 5a (5b), via the metal box 61a,  62a,  63a,  64a,  65a (61b,  62b,  63b,  64b,  65b) A closed portion 2a (2b) that is hermetically sealed is formed.  The outer diameter of the sealing insulator 5a (5b) is smaller than the inner diameter of the arc tube 3, Therefore, the arc tube 3 is in a portion in close contact with the sealing insulator 5a (5b). That is, the diameter is reduced in the closing portion 2a (2b). Each filament body 4 1 ,  42, 43. 44. Each of the wires 412a of 45, 422a, 43 2a, 442a,  -17- 200847227 452a (412b,  422b,  432b,  442b,  452b), It is via the metal box 61a corresponding to the closed portion 2a (2b), 62a, 63a, 64a, 65a ( 6 1b, 62b, 63b, 6 4b, 65b), Electrically connected to an external lead 71a that extends outward in the tube axis direction from the end of the light-emitting tube 3, 72a, 73a, 74a, 75a (71b, 72b, 73b, 74b, 75b). In each of the external wires 71a, 72a, 73a, 74a, 75a (71b, 72b, 73b, 74b,  7 5 b ), A power feeding device (not shown) is connected to each of the filaments 4 1 1 ,  421, 431, 441 451 independently feeds ° So, When the sealing insulator 5 a ( 5b ) is disposed inside the arc tube 3 to form the closing portion 2a ( 2b ), Even inside the arc tube 3, By providing a plurality of filament bodies 41, 42, 43. 44. 45 is equipped with a majority of conductive members 81a, 82a, 83a, 84a, 85a (81b, 82b, 83b, 84b,  85b) incandescent lamp 1, A plurality of metal foils 61a may be disposed by using the side peripheral surfaces of the cylindrical insulating support bodies 5a (5b) without contacting each other. 62a, 63a, 64a, 65a (61b, 62b, 63b, 64b, 65b), Therefore, it is possible to suppress the case where the closing portion 2a (2b) becomes large. especially, Compared with a closed portion formed by clamping and closing to form a flat shape, In the arrangement of a plurality of conductive members 81a,  82a,  83a >  84a,  85a (81b,  82b,  83b,  84b,  85b), It is also possible to reduce the size of the closing portion 2a ( 2b ), Therefore, the viewpoint of saving space is better. also, Each of the metal foils 61a, 62a, 63a,  64a, 65a (61b, 62b, 63b, 64b, 65b) is possible in size, Not at equal intervals, It is possible to arrange the interval in accordance with the position of the wire which is arranged to efficiently illuminate the light from the incandescent lamp 1 with high efficiency.  Each of the filament bodies 41, 42, 43. 44. 45, By using the filaments for each of the lamps -18- 200847227, 42, 43. 44. 45-shaped annular piles (not shown) integrally fixed to the inner wall of the arc tube 3, It is supported inside the arc tube 3. By setting the pile, In order to avoid the high temperature filament 411 when the filament is illuminated, 421, 431, 441 451 is in contact with the inner wall of the light-emitting tube 3, Therefore, it is possible to avoid the filament 411 caused by high temperature, 421, 431, 441  451 is inconvenient to contact the inner wall of the arc tube 3 to make the arc tube 3 transparent. FIG. 2 is a view showing the filament body 4 1 of the incandescent lamp 1 shown in FIG. 42. 43. 44. A partial perspective view of the configuration of the light-emitting portion formed by the insulating support member 45; Fig. 3 is a partial cross-sectional view showing the incandescent lamp 1 cut in the direction of the tube axis by the line A-A' in Fig. 2;  As shown in these figures, The incandescent lamp 1 is a plurality of filament bodies 4 1 . 42, 43. 44.  Each of the wires 412a of 45,  422a,  432a,  442a,  452a and the wire 412b,  422b,  432b,  442b,  The 452b is disposed inside the arc tube 3 while being supported by the insulating support 9. E.g, a rod-shaped insulating support body 9 made of an insulating material such as quartz glass, It is a plurality of five tubular filaments 411 arranged in the direction of the tube axis, 421, 431, 441 451 and extending along the tube axis, Having its central axis arranged with each of the filament bodies 4 1 1 , 4 2 1, 4 3 1, 4 4 1, 4 5 1 The state of the center axis is consistent. Inside the insulating support 9, For inserting each of the wires 412a, 422a, 432a, 442a, 452a and wire 412b,  422b >  432b,  442b,  The passage of 452b 91,  92. 93. 94. 95 is set to correspond to the wire 412a, 422a, 43 2a,  442a,  452a and wire 412b,  422b,  432b,  442b,  The number of 452b, And each of the paths 91, 92. 93. 94. 95 parallel to each other along the tube axis -19- 200847227 extension, Further, each of the end faces communicates with the outlet 913a formed on the same circumference, 923 a, 9 3 3 a, 943 a, 95 3 a and the exit 913b, 923b, 93 3 b,  943b,  953b ° Detailed description, a plurality of the passages 9 1 provided in the insulating support body 9, 92. 93. 94. 95 is made up of: Connected to the outlet 913a formed along the tube axis and formed on the end surface of the insulating support body 9, 923a, 933a, 943a,  Horizontal passage of 953a 911a,  921a,  931a,  941a,  951a, And continuous to the horizontal path 911a, 921a, 931a, 941a, 95 la and the buckling extension in the direction orthogonal to the tube axis, And communicating with the outlet 913c formed on the side of the insulating support 9,  923c,  933c,  943c,  953c vertical path 912a,  922a, 932a, 942a, 952a, And connected to the outlet 913b, 923b,  933b,  943b,  Horizontal passage of 953b 911b,  921b >  931b,  941b,  951b, And continuous to the horizontal passage 911b, 921b, 931b, 941b, 951b and the buckling extension in the direction orthogonal to the tube axis, And communicating with the outlet 913d formed on the side of the insulating support 9,  923d,  933d,  943d,  953d vertical path 912b, 922b, 932b, 942b, 952b, The horizontal passage and the vertical passage are formed in an L shape in a cross section in the tube axis direction. Multiple channels 91, 92. 93. 94. 95, Is in the direction of the tube axis, Vertical path 912a,  922a,  932a,  942a,  952a and vertical path 912b,  922b,  932b, 942b, 9 5 2b is in a relative state, Separated by the equivalent of filament 411, 4 2 1, 4 3 1, 4 4 1, The distance of the full length of 4 5 1 is opposite.  In Figure 2, The insulating support body 9 has five pairs of passages 91 that face each other in the tube axis direction, 92. 93. 94. 95, On each of the end faces, five outlets 913a arranged on the same circumference are formed, 923a, 933a, 943a,  -20- 200847227 953a and the exit 913b,  923b,  933b,  943b,  953b, And five pairs of outlets that are opposite each other in the direction of the tube axis, that is, 1 导 an exit 9 1 3 c,  923c, 93 3 c >  943c, 9 5 3 c and the outlet 9 1 3 d, 923 d, 93 3 d,  943 d, 95 3 d is formed on the side. also, The insulating support body 9 is not short-circuited with each other of the wires 412, 422, 432, 442, 452 can be derived to the outside of the insulating support body 9, a plurality of outlets 913a formed on each of the end faces, 923 a, 933 a, 943 a, 9 5 3 a and the outlet 9 1 3 b, 923b,  93 3 b, 943 b, 9 5 3 b is preferably located on the same circumference.  Such an insulating support 9 is, for example, subjected to cutting by a bar made of an insulating material such as quartz glass. Or cooling the melt after the molding die flows into the melt of molten quartz glass or the like. Forming and forming a wire 412 that is inserted through the above, 422, 432, 442, 558's plural path 91,  92.  93.  94.  The composition of 95.  Each of the filament bodies 41 supported by the insulating support body 9 , 42, 43. 44, 45 is equipped with: Connected to the filament 411, 421, 431, 441 One end of the 451, And a vertical wire portion 4 1 2 1 a extending in the direction orthogonal to the tube axis,  4221 a, 43 2 1 a, 442 1 a, 45 2 1 a, And continuous to the vertical wire portion 4121a,  4221a,  4321a,  4421a,  4521a, a horizontal wire portion 4122a extending in the direction of the tube axis, 4222a, 4322a, 4422a, One of the wires 4 1 2 a formed by hooks formed by 4522a, 4 2 2 a, 4 3 2 a, 4 4 2 a , 45 2a, And connected to the filament 411, 421, 431, 441 One end of the 451, Moreover, the vertical lead portion 4 1 2 1 b extending in the direction orthogonal to the tube axis,  422 1 b, 43 2 1 b, 442 1 b, 452 1 b, And continuous to the vertical wire portion 4121b,  4221b,  4321b,  4421b,  4521b, And the horizontal wire portion 4122b extending in the direction of the tube axis -21 - 200847227 4222b, 4322b, 4422b, The other wire 412b formed by hooks formed by 4522b, 422b, 43 2b,  442b,  452b ° each of the filament bodies 41, 42, 43. 44. 45 is for such an insulating support 9, For each of the filaments 411, 421, 431, 441 451, in which the insulating support body 9 is disposed on the coaxial state, It is installed as follows. One of the wires 412a,  422a,  432a,  442a,  452a, By the outlet 913c on the side of the insulating support body 9,  923c,  933c,  943c,  953c is inserted into the horizontal wire portion 4122a, 4222a >  43 22a, 4422a, The front end of the 4522a, And the horizontal wire portion 4122a, 4222a, 4322a, 4422a, The front end of the 4522a is from the outlet 913a of one end surface of the insulating support body 9, 923 a,  93 3 a, 943 a, 9 5 3 a protrudes toward the outside of the insulating support body 9, And the vertical wire 4121a,  4221a,  4321a,  4421a,  The front end of the 4521a is from the side of the insulating support body 9 at the outlet 913c, 923c, 933c, 943c, 953c protrudes toward the outside of the insulating support body 9, The crucible is mounted on the insulating support 9.  Similarly, The other side of the wire 4 1 2b, 422b, 43 2b, 442b, 452b, By the outlet 913d on the side of the insulating support body 9, 923 d, 93 3 d, 943d, 95 3 d inserted into the horizontal wire section 4122b, 4222b,  43 22b, 4422b, 45 22b front end, And the horizontal lead portion 4122b,  422 2b, 43 22b, 442 2b, The leading end of 4 5 2 2 b is from the outlet 913b of the other end surface of the insulating support body 9, 923 b, 93 3 b, 943b, 9 5 3 b protrudes toward the outside of the insulating support body 9, And the vertical wire 4121b, 422 1 b,  43 2 1 b, 442 1 b, a leading end of the 452 lb is led out from the side of the insulating support 9 913d, 923 d, 93 3 d, 943 d, 95 3 d toward the outer side of the insulating support body 22 - 200847227, The crucible is mounted on the insulating support 9.  Filament body 41, 42, 43. 44. 45 for the installation of the insulating support 9, Is as above, It is not limited to the wire 412a, 422a, 43 2a,  442a,  452a and wire 412b,  422b,  432b,  442b,  452b is connected to the filament 41 1 in advance. 421, 43 1. 441 a filament body 41 formed at both ends of 45 1 , 42, 43. 44. 45 method of mounting on the insulating support body 9, It can also be performed by the filament 4 1 1 , 4 2 1, 4 3 1, 4 4 1, 4 5 1 with wire 4 1 2 a,  422a,  432a,  442a,  452a and wire 412b,  422b,  432b,  442b, 45 2b are respectively disposed behind the insulating support body 9, Wire 412a,  422a,  432a,  442a,  452a and wire 412b,  422b,  432b,  442b, 4 5 2 b is connected to the filament 4 1 1 4 2 1, 4 3 1, 4 4 1, 4 5 1 method at both ends.  also, Filament 41 1 421, 431, 441 The core diameter of the 451 is as φ 0. When it is softer than 5 mm, continuous filaments 411, 421, 431, 44 1 and 45 1, and vertical lead portions 4121a, 4221a, 4321a, 4421a, 4521a, 4121b, 4221b, 4321b, 4421b, 4521b, and horizontal wires The joints 4122a, 4222a, 4322a, 4422a, 4522a, 4122b, 4222b, 43 2 2b, 442 2b, 4 5 2 2 b are formed by a seamless core wire, and the horizontal wire portions 4122a' 4222a > 4322a, 4422a > 4522a is inserted into the outlets 913c, 923c, 93 3 c, 943c, 953c on the side of the insulating support 9, and is inserted into the horizontal lead portion 4122b from the outlets 913d, 923d, 933d, 943d, 953d on the side of the insulating support 9. It is also possible to install the 4222b, 43 22b, 4422b, and 4522b. Fig. 4 is a view showing a configuration in which the light-emitting portions formed by the filament bodies 41, 42, 43, 44, 45 and the insulating support body 9 shown in Figs. 3-23-200847227 are different from each other by a plane parallel to the plane of the paper. A partial cross-sectional view showing the configuration of the light-emitting portions formed by the filament bodies 41, 42, 43, 44, 45 and the insulating support 9. The light-emitting portions shown in Fig. 4 are formed by horizontal passages 911a and 911b shown in Fig. 3 by one horizontal passage 9 1 1 , horizontal passage 921, horizontal passage 93 1 , horizontal passage 941, and horizontal passage 951, respectively. The horizontal passages 921a and 921b, the horizontal passages 931a and 931b, the horizontal passages 941a and 941b, and the horizontal passages 95 1 a and 95 lb are different. In this way, when each of the horizontal passages 9 1 1 , 9 2 1 , 9 3 1 , 9 4 1 , and 9 5 1 is formed into a single hole shape, it is suitable for mass production at a low cost such as drawing or injection molding. The horizontal path 911, 921, 931, 941, 951 of the insulating support 9 can be made. As a result, the cost and the machining time requiring the processing time can be drastically reduced, and the manufacturing cost can be reduced. Especially in the long lamp of the insulating support body 9 whose full length exceeds 200 mm, the cost reduction effect is more remarkable. Fig. 5 (a) is a view showing a filament body 4 1 and 4 2 which are different from the configuration of the light-emitting portions formed by the filament bodies 4 1 , 42 , 43 , 44 , 45 and the insulating support 9 shown in Fig. 3 . (Partial front view of the structure of the light-emitting portion formed by the filament bodies 4 3, 4 4, and 4 5 and not shown) and the insulating support body 9 is shown in section 5 (b), which is a cross-sectional view taken in parallel with the plane of the paper. A partial cross-sectional view of a light-emitting portion formed by the filament bodies 4 1 and 42 (the filament bodies 43 , 44 , and 45 are not shown) and the insulating support 9 shown in Fig. 5 ( a ). As shown in the figures, the insulating support 9 is connected to the outlets 9 1 3 a and 923a which are formed on one end surface of the insulating support 9 extending along the tube axis (the outlets 933a, 943a, 953a are Horizontal path-24-200847227 911a, 921a (not shown) (horizontal passages 931a, 941a, 951a are not shown) and horizontal passages 911a and 921a (horizontal passages 931a, 941a, and 951a are not shown), The horizontal opening grooves 961 and 962 (the horizontal opening grooves 963, 964, and 965 are not shown) formed on the side surface of the insulating support body 9 that opens in the direction orthogonal to the tube axis and extend along the tube axis, and are connected to the horizontal opening groove. 961 and 962 (horizontal opening grooves 963, 964, and 96 5 are not shown) and horizontal passages 911b extending along the tube axis (horizontal passages 921b, 931b, 941b, and 951b are not shown), and communicating with the horizontal passage 911b (horizontal passages 921b, 931b, 941b, and 95 lb are not shown), and are formed on the other end faces of the insulating support body 9, such as the guide ports 913b, 923b, 933b, 943b, and 953b (not shown). In the insulating support body 9, for example, a rod made of an insulating material such as quartz glass is subjected to a cutting process, or a molten metal such as molten quartz glass is introduced into a molding die, and then the melt is cooled. A configuration is provided in which a plurality of vias having through wires are formed. Each of the filament bodies 4 1 and 42 (the filament bodies 43 , 44 , 45 are not shown) supported by the insulating support 9 , each of the filaments 41 1 (the filaments 421 , 43 1 , 44 1 , 45 1 are not shown) Shown by the filaments 4 1 1 a, 4 1 1 b, the filament 41 lb is arranged to be wound around the insulating support body 9, so that the filament 41 la can be supported so as not to contact the insulating support body 9 . Further, other filaments 42 1 , 4 3 1 , 44 1 , and 4 5 1 (not shown) are similar to the filament 4 1 1 by filaments 421a and 421b, incandescent lamps 43 la and 43 lb, and incandescent lamps 441a. 441b and incandescent lamps 451a and 451b are formed. Each of the filament bodies 41, 42, 43, 44, 45 is for such an insulating support body 9, among the filaments 4 1 1 , 4 2 1 , 4 3 1 , 4 4 1 , 4 5 1 , with a filament - 25-200847227 4 1 1 As an example, the filament 4 1 1 is mounted as follows with the insulating support 9 disposed coaxially. One of the wires 4 1 2 a is inserted into the front end of the horizontal lead portion 4 122a from the horizontal opening groove 96 1 on the side surface of the insulating support body 9, and the leading end of the horizontal lead portion 41 22a is guided from one end face of the insulating support body 9. The outlet 91 3a protrudes outside the insulating support body 9, and is attached to the insulating support body 9 by projecting the front end of the vertical lead portion 4 1 2 1 a from the horizontal opening groove 96 1 of the insulating support body 9 outside the insulating support body. . Similarly, the other wire 4 1 2b is inserted from the horizontal opening groove 961 on the side surface of the insulating support body 9 into the front end of the horizontal wire portion 41 22b, and the front end of the horizontal wire portion 41 22b is separated from the insulating support body 9 The outlet end 91 3b of one end surface protrudes outside the insulating support body 9, and the front end of the vertical lead portion 4 1 2 1 b protrudes from the horizontal opening groove 96 1 on the side of the insulating support body 9 outside the insulating support body 9, It is mounted on the insulating support 9. When the filament body 4 1 is mounted on the insulating support body 9, the horizontal lead portions 4122a and 41 22b of the filament body 41 are inserted from the horizontal opening grooves 961 and mounted, so that the mounting work is easy. Fig. 6(a) is a view showing the filament bodies 41, 42, 45 which are different from the configuration of the light-emitting portions formed by the filament bodies 4 1 , 42 , 43 , 44 , 45 and the insulating support 9 shown in Fig. 3 . (The filament bodies 43 and 44 are not shown) and a partial perspective view of the structure of the light-emitting portion formed by the insulating support body 9, and Fig. 6(b) is a cross-sectional view taken along the line A-A'. a) A partial cross-sectional view showing the configuration of the light-emitting portions formed by the filament bodies 41, 42 and 45 (the filament bodies 43 and 44 are not shown) and the insulating support 9. As shown in the figures, the insulating support body 9 is formed to extend from one end face side of the support -26-200847227 support body 9 to the tube axis orthogonal direction and to support the filament 41 1 along the tube axis. The horizontal opening grooves 96 1 a, 962a, 963a, 964a, and 965a from the portions of the insulating support body 9 of 421 and 451 (the filaments 431 and 441 are not shown) and the other end surface side of the insulating support body 9 are always The horizontal opening grooves 961b, 963b, and 964b extending to the portion of the insulating support body 9 in which the filaments 411, 421, and 451 (the filaments 43 1 and 441 are not shown) are supported along the tube axis in the direction orthogonal to the tube axis ( The horizontal opening grooves 962b and 965b are not shown). Such an insulating support 9 is formed by, for example, cutting a rod made of an insulating material such as quartz glass or 'flowing a melt into a molten mold such as quartz glass.' . Each of the filament bodies 41, 42, 43, 44, 45 is such an insulating support body 9, and each of the filaments 41 1 , 421 , 431 , 441 , and 451 is described by taking the filament 4 1 1 as an example. The filament 4 1 1 is mounted as follows while the insulating support 9 is placed on the same axis. One of the wires 4 1 2a is attached to the insulating support 9 by disposing the horizontal lead portion 4122 a on the horizontal opening groove 96 1 a formed from one end face side of the insulating support 9 . Similarly, the other lead wire 4 1 2b is mounted by disposing the horizontal lead portion 41 22b on the horizontal opening groove 9 6 1 b formed from the other end surface side of the insulating support body 9. Insulating the support body 9. When the filament 4 1 1 is mounted on the insulating support 9, the horizontal lead portions 4122a and 41 22b of the filament body 41 are disposed in the horizontal opening grooves 961a and 961b to be opened, so that the mounting work becomes easy. Further, in the above, the horizontal opening groove 96 la and the horizontal opening groove 96 lb are -27-200847227, which are formed as unconnected different grooves, but the filament 4 1 is made by the horizontal wire portion 41 22a and the horizontal wire portion 4 1 22b. 1 When a sufficient strength is not fixed in the direction of the tube axis, a horizontal opening groove which is a continuous horizontal opening groove 96 1 a and a horizontal opening groove 96 1 b may be formed. In this case, the groove can be formed by the drawing method using a mold or the like, and the processing cost can be reduced. 一例 An example of the specific specifications of the incandescent lamp 1 of the invention of the present embodiment is shown below. The arc tube 3 has an outer diameter of about Φ 6 mm to Φ 40 mm, a full length of about several tens of mm to about 800 mm, and the distance from the incandescent lamp 1 to the object to be processed by the size of the object to be processed, and the lamp arrangement in the lamp unit Determined. Each of the filament bodies 41, 42, 43, 44, 45 is of a diameter φ 0. Core wire from 05mm to 1mm. In the present embodiment, when the twinning circle of 0 3 0 mm is irradiated with a distance of 50 mm, the outer diameter of the arc tube is 28 mm, the full length is 560 mm, and the filament core diameter is 〇. 5mm, the maximum full length of one filament is l4〇nim, and the outer diameter is formed at both ends of the filament of φ 8mm, and a wire having an outer diameter larger than the filament core wire, for example, φ 0 · 8 m m is connected. The outer diameter of the filament is not limited to Φ 8 m m , and is about 6 4 mm to φ 2 〇 111111 according to the required electric power and the filament temperature. The maximum rated current 每 of each filament is determined according to the required temperature rise characteristic of the workpiece and the allowable current 値 of the metal foils 61, 62, 63, 64, 65 of the closing portion 2, which is 25 本 in the present embodiment. ° The outer diameter of the insulating support body 9 is determined by the inner diameter of the filament or the number of filaments 'becomes Φ 2 to Φ 18 mm & right, and the full length is set to be longer than the sum of the lengths of the filaments and can be mounted on the f The length inside the light pipe 3. In the present embodiment, a rod made of quartz glass having a full length of -28-200847227 460 mm is used, and the diameter of each of the passages 91, 92, 93, 94, 95 is traversable to the wire 412, 422, 432, 442, 452, a larger diameter than the wires 412, 422, 432, 442, 452, for example, Φ 1 mm. As described above, according to the incandescent lamp 1 of the present invention, basically, the plurality of the filaments 4 1 1 , 4 2 1 , 4 3 1 , 4 4 1 , 4 5 1 are disposed in the closed Each of the conductive members 81a, 82a, 83a, 84a, and 85a and the conductive members 8 1 b, 82b, 83b, 84b, and 85b of the portions 2a and 2b are independently fed, even if heat-treated. The distribution of the degree of temperature change of the place of the treatment body is uniform in the case where the shape of the substrate is asymmetrical, and the object to be processed can be uniformly heated. Therefore, a uniform temperature distribution can be achieved overall in the entire body to be processed. Further, the insulating support body 9 disposed inside each of the filaments 41 1 , 421 , 431 , 441 , and 45 1 is, for example, an insulating support body 9 disposed inside the filament 4 11 , other than the filament 4 1 1 Each of the wires 422, 432, 442, and 452 of the other filaments 42 1 , 43 1 , 44 1 , and 451 are not short-circuited and supported, thereby still providing a plurality of filament bodies inside the arc tube 3 . 41, 42, 43, 44, and 45, the wires 412, 422, 432, 442, and 452 are not disposed outside the filaments 41 1 , 421 , 431 , 44 1 , and 451 , and it is easy to secure each of the wires 412 , The insulation between 422, 432, 442, and 452, and the emitted light from the filaments 411, 4 21, 4 31, 4 41, and 4 51 are not blocked by the wires 412, 422, 432, 442, and 452, and can be expected. The effect of the desired light irradiance distribution is obtained. Moreover, the -29-200847227 insulating support body 9 disposed inside the filaments 41 1 , 421 , 43 1 , 441 , and 45 1 comes from the filaments 4 1 1 , 42 1 , 43 1 , 44 1 , 451 even when lighting. When the light is irradiated and the light is emitted in a high temperature state, most of the light that is emitted by the light is shielded by the filaments 411, 421, 431, 441, and 451, and is not exposed to the outside of the lamp, so that the light is not affected. Radiation illuminance distribution. Further, the light which is radiated from the insulating support 9 and passes through the coil gap of the filaments 4 1 1 , 42 1 , 4 3 1 , 4 4 1 , 4 5 1 is from the filaments 4 1 1 , 4 2 1 , 4 3 1. The inside of 44 1 , 4 5 1 , that is, the light emitted from the center, is therefore equivalent to the fact that the optical filaments 411, 421, 431, 441, and 451 are substantially illuminated, so that the illuminance of the light is not Distribution gives the wrong side. In the configuration of the incandescent lamp 1 of the present invention, the above-described effects are expected, and it is particularly effective for the purpose of temperature-controlled object to be processed by rapid heating and excellent precision. In detail, the constitution of the present invention is directed to having an outer diameter of φ 0 which is capable of withstanding a large current such as 25 A flowing at each filament. The filament body of the 8 mm wire is particularly effective in providing more than four filaments in the arc tube 3. Hereinafter, a second embodiment of the present invention will be described using Fig. 7. Fig. 7 is a perspective view showing the configuration of the filament bodies 4 1 , 42 , 43 , 44 and 45 of the incandescent lamp 1 of the present invention and the light-emitting portion formed by the insulating support 10 . The incandescent lamp 1 of the present invention is a light-emitting portion formed by the filament body and the insulating support shown in Fig. 7 instead of the light-emitting portion formed in the filament body and the insulating support of Fig. 1, and is formed by applying the filament body and the insulating support shown in Fig. 7 The Ministry became possible. As shown in the figure, the filament bodies 4 1 , 42 , 43 , 44 , 45 of the incandescent lamp 1 and the light-emitting portion formed by the insulating support 10 are used in addition to the center extending along the axis of the tube -30-200847227. The periphery of the member 010 has an insulating support body in which a plurality of insulating tubes 1021a, 1022a, 1023a, 1024a, and 1025a extending along a tube axis and insulating tubes 1021b, 1022b, 1023b, 1024b, and 1025b are disposed on the same circumference. Other than 10, it has the same configuration as that shown in Fig. 2. The insulating support body 1 is a rod-shaped center member 1 〇1 extending along the tube axis, and a plurality of insulating tubes 1 〇 2 1 a extending in parallel with the center member 1 〇1 and disposed on the side surface of the center member 1 〇1 1 0 2 2 a, 1 0 2 3 a, 1 0 2 4 a, 1025a and insulating tubes 1021b, 1022b, 1023b, 1024b, 1025b. The central member 101 is made of ceramic such as quartz glass or alumina, or a high melting point metal such as tungsten or molybdenum, and the plurality of insulating tubes 1021a, 1 022a, 1023a, 1024a, 1025a, 1021b, 1022b, 1023b, 1024b L〇25b is made of ceramics such as quartz glass or alumina. In this embodiment, both use quartz glass. In detail, the insulating support 10 is two types of insulating tubes 1021a, 1022a, 1023a, 1024a, and 1025a and insulating tubes 10b, 1022b, 1023b, 1024b, and 1025b which are different in total length in the tube axis direction. The group (that is, a total of 10 insulating tubes are disposed on the side of the center member 101 as follows. That is, 5 insulating tubes 1021a, 1 022a, 1 023 a, 1 0 24a, 1 02 5 a The first group formed is disposed on the same circumference on the same plane as one end surface of the center member 101, and is disposed on the center member 1 0 1 along the tube axis in parallel with the center member 1 〇1. In the state of the side surface, the annular fastening member 1 0 3 a is wound around the side surface, and is integrally fixed to the center member 丨〇i. Similarly, the five insulating tubes 1021b and 1022b are formed. The second group -31 - 200847227 formed by l〇23b, 1024b, 1025b is such that the end portions are on the same circumference on the same plane as the other end surface of the center member 1 〇1, and the central member 1 0 1 is mutually Arranged in parallel along the tube axis to the central member 1 0 1 In the state of the surface, the annular fastening members 1 〇 3b are wound around the respective side faces, and are integrally fixed to the center member 110. Further, they are disposed on the side surface of the center member 110. The 10 insulating tubes are the insulating tubes 1021a, 1022a, 1023a, 1024a, 1025a of the first group and the insulating tubes 10b, 1 022b, 1 023b, 1 024b, 1 025 b of the second group. In the tube axis direction, the gaps (filament arrangement portions) corresponding to the full length of the filaments 41 1 , 421 , 431 , 44 1 , and 45 1 are opposed to each other, and the insulating tubes 1 0 2 of the first group facing each other are opposed to each other. 1 a, 1 0 2 2 a, 1 0 2 3 a, 1 0 24 a, 1025a and the total length of the tube lengths of the insulating tubes l〇21b, 1022b, 1023b, 1024b, 1 025b of the second group, Each of the opposing portions is disposed to be uniform, that is, when the insulating tube located directly in front of the paper surface is used as a reference, in the clockwise direction of the insulating support 1 。, the insulating tube 1021a and the second group having the shortest length of the first group The longest insulated tube 1〇21b of the full length, the 2nd short insulating tube of the first group of the first group, and the second long insulating tube of the second group. 22b, the insulating tube 1 〇 2 3 a of the entire length of the first group and the insulating tube 1 023b of the entire length of the second group, the second long insulating tube 1 0 24a and the second group of the first group The second shortest insulating tube i〇24b of the full length, the longest insulating tube 1 〇2 5 a of the first group and the shortest insulating tube 1 025 b of the second group, in this order, The tube axis direction faces each other across a gap corresponding to the full length of the filaments 41 1 , 42 1 , 43 1 , 44 1 , and 45 1 . Thus, 10 insulating tubes 1 〇 2 1 a, 1 〇 2 2 a, 1 〇 2 3 a, 1 0 2 4 a, -32- 200847227 1025a, 1021b, 1022b, 1023b, 1024b, 1025b are disposed at the center. The insulating support 1 on the side surface of the member 110 is a filament arrangement portion formed in a gap between the opposing pairs of insulating tubes in the tube axis direction, and is sequentially arranged in the tube axis direction. . Further, in Fig. 7, the five types of insulating tubes 1021a, 1022a, 1023a, 1024a, and 1025a of the first group having different lengths are provided on the insulating support 1 when the insulating tubes located directly in front of the paper surface are used as a reference. In the clockwise direction, the entire length of the insulating tube in the tube axis direction is sequentially disposed on the side surface of the center member 110, but is not necessarily limited to the constituent. On the other hand, when the five types of insulating tubes of the first group having different lengths are based on the insulating tube located directly in front of the paper surface, the entire length of the insulating tube in the tube axis direction is in the clockwise direction of the insulating support 10. The degree may be gradually reduced to the side surface of the center member 110. Further, five types of insulating tubes having different overall lengths may be disposed on the side surface of the center member 110. Further, the center member 1 0 1 is not required, and the insulating support 1 〇 can be constituted only by the plurality of insulating tubes. The filament bodies 41, 42, 43, 44, and 45 are the same as those shown in Figs. 2 to 5, and the horizontal lead portions 4 1 2 2 a, 4 2 2 2 a, 4322a, and 4422a are used. Hook wires 412a, 422a, 432a, 442a, 452a formed by 4522a, 4122b, 4222b, 4322b, 4422b, 4522b and vertical lead portions 4121a, 4221a, 4321a, 4421a, 4521a, 4121b, 4221b, 4321b, 4421b, 4521b , 412b, 422b, 432b, 442b, 452b. Each of the filament bodies 41, 42, 43, 44, and 45 has a center of the insulating support 10 for each of the filaments 411, 421, 431, 441, and 451 - 33 - 200847227. The member 1 0 1 is disposed on the coaxial state. The insulating support 10 is mounted as follows without being short-circuited to each other by the insulating support 1 . Specifically, the one of the wires 412a, 422a, 432a, 442a, and 452a connected to one end of the filaments 4 1 1 , 42 1 , 43 1 , 44 1 and 451 is a horizontal lead portion 4122a, 4222a, 4322a, 4422a, The front end of the 4522a penetrates from the other end side of the insulating tubes 10a, 1022a, 1023a, 1024a, and 1025a toward the one end side, and from the one end side of the insulating tubes 10a, 21a, 1 023a, 1 024a, and 1 025a. Protruding and being pulled out to extend in the direction of the tube axis, and by extending the vertical lead portions 4121a, 4221a, 4321a, 442 1 a, 452 1 a in the direction orthogonal to the tube axis, in the filaments 41 1 , 421 , 431 , 441, 451 is attached to the insulating support 10 without being in contact with the insulating tubes 1021a, 1022a, 1023a, 1 024a, and 1 02 5 a. The other of the wires 412b, 422b, 43 2b, 442b, and 452b connected to the other ends of the filaments 4 1 1 , 4 2 1 , 4 3 1 , 4 4 1 , and 4 5 1 are horizontal lead portions 4122b and 4222b. The front ends of the 4322b, 4422b, and 4522b penetrate from the one end side of the insulating tubes 1021b, 1022b, 1023b, 1024b, and 1025b toward the other end side, and protrude from the other end side of the insulating tube 1021'' 1022b' 1023b' 1024b' 1025b. The wire 411, 421, 431, 441, 451, 451 are not abutted by the vertical wire portions 4121b, 4221b, 4321b, 4421b, 4521b extending in the direction orthogonal to the tube axis. Insulating tubes 1021b, 1022b, 1023b, 1024b, and 1025b are attached to the insulating support 1 〇. Each of the wires connected to each of the filament bodies 4, 42, 43, 44, 45 is not short-circuited with each other by passing through the respective insulating tubes. In addition, in the incandescent lamp 1 of the present invention, basically, the same effect as the incandescent lamp 1 of the invention of the first embodiment can be expected, and the manufacture of the insulating support 10 can be easily performed. Since the insulating support body 9 of the incandescent lamp 1 of the first embodiment of the invention is more than the above, the cost required for the manufacture of the insulating support can be reduced. Hereinafter, a third embodiment of the present invention will be described with reference to Fig. 8. Fig. 8 is a perspective view showing the configuration of the light-emitting portions formed by the filament bodies 4 1 , 4 2 , 4 3 , 4 4 , and 4 5 of the incandescent lamp 1 of the present invention and the insulating support 1 2 . The incandescent lamp 1 of the present invention is a light-emitting portion formed by the filament body and the insulating support shown in Fig. 8 instead of the light-emitting portion formed in the filament body and the insulating support of Fig. 1 . The Ministry became possible. As shown in the figure, the light-emitting portions of the filament body of the incandescent lamp 1 and the insulating support are provided to extend along the tube axis and to the filament bodies 4 1 , 4 2 , 4 3 , 4 4 , The insulating support 12 having the configuration of the partition walls 1221, 1 222, 1 223, 1224, and 1 225 which radially expand in the radial direction has the same configuration as that shown in Fig. 2 . The insulating support body 12 has a circular cross section formed in a radial direction and continuously extends away from the central portion 1 2 1 extending along the tube axis in the circumferential direction, and extends along the tube axis, and is directed toward the filament 4 1 1 . 4 2 1 , 4 3 1 , 4 4 1 , 4 5 1 The plurality of partition walls radially extending in the radial direction 1 2 2 1 , 1 2 2 2, 1 2 2 3, 1 2 2 4, 1 2 2 5 Composition. The insulating support body 1 2 is provided with a pair of partition walls 1222 and 1223 adjacent to the center portion 121 by a pair of adjacent partition walls 1221 and 1222, and a pair of partition walls 1 223 adjacent to the center portion 121. And a pair of partition walls 1224 and 1 225 adjacent to the central portion-35-200847227 121, and a pair of partition walls 1 225, 1221 and a central portion 121 adjacent to the central portion 121, forming a filament body The number of the same number of wire arrangement portions, and the diameter of the imaginary circle formed by connecting the apexes of the plurality of division walls 1 22 1 , 1 222 , 1 223 , 1 224 , 1 225 substantially coincides with the diameter of the filament. The insulating support body 12 is For example, a rod-shaped insulating material composed of quartz glass or the like may be subjected to a cutting process, or a molten metal may be cooled after the forming mold flows into the molten quartz glass to obtain a desired shape. Each of the filament bodies 41, 42, 43, 44, and 45 is connected to each of the filaments 411, 421, 431, 441, and 451 in a state in which the central portion 1 2 1 of the insulating support 12 is disposed coaxially. a pair of wires 41 2a and wires 412b, wires 422a and wires 422b, wires 43 2a and wires 432b, wires 442a and wires 442b, and wires 452a and wires of each of the filaments 4 1 1 , 42 1 , 43 1 , 441 , 451 Both of the 452b are individually disposed in the same wire arrangement area, and are not attached to the insulating support body 12 in a short circuit. The configurations of the filament bodies 4 1 , 42 , 43 , 44 , and 45 are the same as those shown in Figs. 2 to 6 . Specifically, one of the wires 412a, 422a, 43 2a, 442a, and 452a connected to one end of the filaments 41 1 , 421 , 43 1 , 441 , and 451 is a vertical lead portion 4121 a ' 422 1 a ^ 43 2 1 a ^ 442 1 a ^ 4521a extends in the tube axis direction toward the central portion 1 2 1 and is disposed in the horizontal wire portions 4122 a, 4222a, 4322a, 4422a, 4522a of the wire arrangement area between the adjacent pair of partition walls One end is configured to protrude from one end of the insulating support 12 and extend along the tube axis. The other of the wires 412b, 422b, 432b, -36-200847227 442b, 452b connected to the other ends of the filaments 4 1 1 , 4 2 1 , 4 3 1 , 441, 451 are vertical lead portions 4121b, 4221b, 4321b 4421b and 4521b extend in the tube axis direction toward the center portion 121, and are disposed in a gap between the filaments 41, 421, 431, 441, and 451, and one of the wires 412a, 422a, 432a, and 442a. The horizontal wire portions 4122b, 4222b, 4322b, 4422b, 4522b of the same wire arrangement field of 452a extend along the tube axis in parallel with the partition walls 1221, 1222, 1223, 1224, 1 225. One end is configured to protrude from the other end of the insulating support body 12. As described above, basically, the incandescent lamp 1 of the present invention is expected to have the same effect as the incandescent lamp 1 of the first embodiment, and is provided for the partition wall 1221 and 1 provided in the insulating support 12. 222, 1 223, 1 2 2 4, 1 22 5 are supported by the filaments 41 1 , 421 , 43 1 , 441 , 4 5 1 , so that the filaments 411, 421, 431, 441, 451 can be used. It is placed at a desired position with high precision, and it is possible to prevent the filaments 4 1 1 , 42 1 , 43 1 , 44 1 , 451 from sagging in the vertical direction. Hereinafter, a fourth embodiment of the present invention will be described using FIG. 9 and FIG. Fig. 9 is a front sectional view showing the light irradiation type heat treatment apparatus of the invention of the embodiment. Fig. 10 is a plan view showing the configuration of the first lamp unit and the second lamp unit shown in Fig. 9. The light-irradiated heat treatment apparatus 1 of the present invention is configured by any one of the incandescent lamps 1 of the invention according to the first embodiment to the third embodiment. As shown in Fig. 9, the light-irradiating heat treatment apparatus 100 has a cavity 102 which is divided into a lamp unit accommodating space s 1 by a quartz glass 101 and a heating space -37-200847227 conditioned space S2. The light emitted from the first lamp unit 103 and the second lamp unit 104 disposed in the lamp unit accommodating space S1 is irradiated to the object to be processed 105 provided in the heat processing space S2 via the quartz window 1〇1, The heat treatment of the object to be processed 1 〇 5 can be performed. The first lamp unit 103 and the second lamp unit 104 that are housed in the lamp unit accommodating space S1 are configured by arranging ten individual incandescent lamps 1 at predetermined intervals, for example, and are arranged to face each other. . As shown in Fig. 9, the direction of the tube axis of the incandescent lamp 1 constituting the first lamp unit 103 is the direction of the tube axis in which the incandescent lamp 1 constituting the second lamp unit 104 is disposed. Further, it is not necessary to arrange two-stage lamp units as shown in Fig. 9, and only one lamp unit may be provided. A mirror 106 is disposed above the first lamp unit 103. The mirror 106 is, for example, a structure in which a base material made of oxygen-free copper is coated with gold, and the reflection cross section has a shape of a part of a circle, a part of an ellipse, a part of a parabola, or a flat plate shape. The mirror 106 reflects the light irradiated upward from the first lamp unit 103 and the second lamp unit 104 to the object to be processed 1 〇 5 side. In other words, the light emitted from the first lamp unit 103 and the second lamp unit 104 is directly or reflected by the mirror 106, and is irradiated onto the object to be processed 1〇5. The lamp unit accommodating space S 1 ' is guided into the cooling air from the cooling air unit 107 from the air outlet 109 of the cooling air supply nozzle 108 provided in the chamber 102. The cooling air introduced into the lamp unit accommodating space S 1 is the incandescent lamp 1 that is sprayed on the first lamp unit 1300 and the second lamp unit 1 〇 4, and cools the illuminating tubes constituting each of the incandescent lamps 1. Here, the closed portion of each of the incandescent lamps 1 is lower in heat resistance than other portions. Therefore, the air outlets 1 to 9 of the cooling air supply nozzles 108 are disposed in the closed portions of the respective incandescent lamps 1 at -38 to 200847227, and it is preferable to constitute a closed portion for preferentially cooling the incandescent lamps 1. The cooling air which is sprayed on each of the incandescent lamps 1 and which is heated to a high temperature by heat exchange is discharged from the cooling air discharge port 1 1 0 provided in the chamber 102. Further, the flow of the cooling air is such that the incandescent lamp 1 is heated in the opposite direction in consideration of the cooling air which is heated to a high temperature. The cooling air is also configured to simultaneously cool the mirror 106 to set the flow of wind. Further, when the mirror 160 is water-cooled by a water-cooling mechanism that is omitted, the flow of the wind may not be set to be the same as the mirror 106. However, heat is generated in the quartz window 101 by the radiant heat from the heated object to be treated 105. The object to be treated 1 0 5 is subjected to an undesired heating action by a heat line radiated secondaryly from the stored quartz window 110. At this time, the temperature controllability of the object to be processed 105 is increased (for example, the temperature of the object to be processed 105 becomes a higher temperature than the set temperature), or the quartz window 1 〇1 body due to heat storage. The temperature deviation of the object to be processed 105 is inconvenient to lower the temperature uniformity and the like. Further, it is difficult to increase the temperature drop rate of the object to be processed 1 〇 5 . Therefore, in order to suppress such inconvenience, the air outlet 109 of the cooling air supply nozzle 108 as shown in Fig. 9 is also provided in the vicinity of the quartz window 101, and the quartz window 1 is cooled by the cooling air from the cooling air unit 107. 0 1 is preferred. Each of the incandescent lamps 1 of the first lamp unit 103 is supported by a pair of first fixed stages 1 1 1 and Π2. The first fixed stages 111 and 112 are composed of a conductive stage 1 1 3 formed of a conductive member and a holding stage 114 formed of an insulating member such as ceramic. The holding stage 114 is disposed on the inner wall of the cavity 102 to maintain the conductive -39-200847227 stage 1 1 3 . The number of the incandescent lamps 1 constituting the first lamp unit 203 is taken as ni, and the number of the filament bodies included in the incandescent lamp 1 is m1, and when the electric power is independently supplied to all the filament bodies, the pair is first. The number of groups of the fixed stations 1 1 1 and 1 1 2 is the nl xml group. On the other hand, each of the incandescent lamps 1 of the second lamp unit 104 is supported by the second fixed stage. Similarly to the first fixed stages 1U and n2, the second fixed stage is composed of a conductive stage and a holding stage. The number of the incandescent lamps 1 constituting the second lamp unit i 〇 4 is η 2 , and the number of the filament bodies included in the incandescent lamp 1 is m 2 , and when the electric power is independently supplied to all the filament bodies, the pair is 2 The number of sets of fixed stations is η 2 X m 2 sets. In the chamber 102, a pair of power supply ports 116, 117 to which the feeders from the power supply unit 1 15 are connected are provided. Further, in Fig. 9, there is shown a group of power supplies 埠1 1 6 and 1 1 7 depending on the number of incandescent lamps 1, the number of filament bodies in each incandescent lamp 1, etc. The number is determined. In Fig. 9, the power supply ports 116, 117 are electrically continuous with the conductive stages 1 1 3 of the first lamp fixing stages 111 and 112. The conductive stage 1 1 3 of the first lamp fixing stage 1 1 1 and 1 1 2 is electrically connected to, for example, an external lead. With such a configuration, it becomes a filament body of one incandescent lamp 1 that can be fed from the power feeding unit of the power supply unit 1 15 to the first lamp unit 1 〇3. Further, for the other filament bodies of the incandescent lamp 1, the filaments of the other incandescent lamps 1 of the first lamp unit 103, and the filaments of the incandescent lamps 1 of the second lamp unit 104 are also connected by other pairs of power sources. Supply 埠, apply the same electrical connection. Further, in the heat treatment space S2, a processing table 1 1 8 for fixing the object to be processed 1〇5 is provided. For example, when the object to be processed 1 0 5 is a semiconductor wafer, the processing stage 1 18 is a ceramic material such as molybdenum, or tungsten, a giant high-melting point metal material or strontium carbide (Si C ) -40-200847227, or The annular body of the thin plate formed of quartz or sand (S i ) is preferably a retaining ring structure formed to support the semiconductor wafer at the step portion of the inner peripheral portion of the circular opening. The semiconductor wafer ' of the object to be processed 1 〇 5 is disposed so as to be embedded in the circular opening portion of the annular guard ring, and is supported at the step portion. The processing table 1 18 is itself high temperature by light irradiation, and the outer periphery of the semiconductor wafer is heated and heated to compensate for the heat radiation from the outer periphery of the semiconductor wafer. This causes a decrease in the temperature of the peripheral portion of the semiconductor wafer due to heat radiation from the outer periphery of the semiconductor wafer. On the back side of the light-irradiated surface of the object to be processed 105 provided on the processing table 1 18, the temperature measuring unit 11 is placed in contact with or near the ground to be disposed on the object to be processed 105. The temperature measuring unit 1 19 is for monitoring the temperature distribution of the object to be processed 105, and is set and arranged in accordance with the size of the object to be processed 105. The temperature measuring unit 1 19 is, for example, a thermocouple or a radiation thermometer. The temperature information monitored by the temperature measuring unit 19 is sent to the thermometer 120. The thermometer 120 calculates the temperature of the measurement point of each temperature measuring unit 依据 9 based on the temperature information transmitted by each temperature measuring unit 1 19 , and transmits the calculated temperature information to the temperature control unit 1 2 1 to Main control unit 1 22. The main control unit 122 issues a command to the temperature control unit 1 21 based on the temperature information of each measurement point on the object to be processed 105 so that the temperature on the object to be processed 105 becomes uniform at a predetermined temperature. The temperature control unit 1 2 1 controls the electric power supplied from the power supply unit 1 15 to the filament bodies of the incandescent lamps 1 in accordance with the command. For example, when the temperature control unit 1 22 obtains temperature information that is lower than the predetermined temperature from the temperature of the measurement point, the main control unit 1 22 increases the radiation emitted from the light-emitting unit that is close to the measurement point of -41 - 200847227. Lightly, the command to the temperature control unit 112 increases the amount of power supplied to the filament body. The temperature control unit 1 2 1 increases the power supplied from the power supply unit 1 15 to the power supply ports 1 1 16 and 1 1 7 connected to the filament body in accordance with a command sent from the main control unit 1 2 2 . The main control unit 122 is the lighting of the incandescent lamp 1 of the first and second lamp units 103 and 104. By transmitting the command to the cooling air unit 107, the illumination tube and the quartz window 1 〇 1 are not brought to a high temperature state. Further, depending on the type of the heat treatment, the processing gas unit 1 23 that introduces and exhausts the processing gas may be connected to the heat treatment space S2. For example, when the thermal oxidation treatment is performed, the introduction and exhaust oxygen gas and the processing gas unit for flushing the flushing gas (e.g., nitrogen gas) in the heat treatment space S2 are connected to the heat treatment space S2. The processing gas and the flushing gas from the processing gas unit 133 are introduced into the heat processing space S2 from the air outlet 125 of the gas supply nozzle 124 provided in the chamber 102. Further, the exhaust is performed from the exhaust port 126. According to the light irradiation type heat treatment apparatus 1 of the present invention as described above, the following effects can be exhibited. In the incandescent lamp 1 of the lamp units 103 and 104 which are mounted in the light source unit of the light irradiation type heat treatment apparatus 1 , the filament bodies of the first embodiment to the third embodiment are disposed inside the arc tube. The light-emitting portion formed of the insulating support can be individually adjusted to be fed to the filament. Thus, the setting of the light intensity distribution can be adjusted for the axial direction of the arc tube. Therefore, the irradiance distribution ' on the surface of the object to be processed 1 〇 5 can also be set with high precision in the two-dimensional direction. For example, a narrow-length specific field (such as the field 1 shown in FIG. 1) of the incandescent lamp having a shorter length than the light source portion of the conventional light-illuminating heat treatment device can also be used. It is limited to this specific field (field 1), and the irradiance on this specific field (field 1) can be set. That is, in this specific field (field 1) and other fields (such as field 2 shown in Fig. 10), it is possible to set the illuminance distribution corresponding to each of the characteristics. Therefore, the temperature that can be controlled into the above-mentioned specific fields (field 1) and other fields (field 2) becomes uniform. Similarly, it is suppressed that the site temperature distribution occurs in the object to be processed 105, and a uniform temperature distribution is obtained in the entirety of the object to be processed 105. Further, in the light-irradiating heat treatment apparatus of the present invention, it is possible to reduce the distance between the filaments which are not emitted, so that the distance between the filaments disposed in the arc tube can be made extremely small. The influence of the part can make the undesired unevenness of the illuminance distribution on the object to be processed 1 〇 5 extremely small. Further, in the height direction of the light-irradiation type heat treatment apparatus 1 也, the space of the lamp units 103 and 104 formed by the plurality of tubular incandescent lamps 1 can be reduced, so that the light irradiation type heat treatment can be performed. The device is made compact. In addition, as described in the incandescent lamp 1 of the first to third embodiments of the present invention, the incandescent lamp 1 mounted on the light-irradiating heat treatment device is disposed on each of the inner sides of the filament. The insulating support 'the wires of the other filaments other than the filament are not short-circuited and supported, so that even if a plurality of filament bodies are disposed inside the arc tube, no wires are disposed outside the filament. It is easy to ensure the insulation between the wires, and the desired light irradiance distribution can be obtained by "the wires do not block the emitted light from the filaments". -43 - 200847227 In the light irradiation type heat treatment apparatus of the present invention, the case where the lamp units 103 and 104 including the plurality of incandescent lamps 1 are arranged in parallel is used as the light source for heating, but It is also possible to constitute a lamp unit, and it is also possible to constitute a light source unit by a single incandescent lamp 1. Further, in the light irradiation type heat treatment apparatus of the present invention, the object to be processed 105 which is heat-treated is not limited to the semiconductor wafer, and may be applied to, for example, a polycrystalline silicon substrate or a glass substrate for a solar cell panel or A ceramic substrate, a glass substrate for liquid crystal display, or the like. In particular, a rectangular substrate is used for a substrate of various materials for a solar cell panel, and most of the light-irradiated heat treatment device used for heat treatment of such a processed object is a horizontally-moving square substrate. a plurality of incandescent lamps arranged by extending a tube axis in a direction orthogonal to a moving direction of the substrate, or a plurality of incandescent lamps arranged by extending the tube axis in a direction orthogonal to a moving direction of the substrate The lamp is configured to perform heat treatment as light that illuminates the strip shape. In this case, by using the incandescent lamp 1 of the present invention in which four or more filament bodies are disposed, the temperature of both sides (the strip-shaped both end portions) parallel to the moving direction of the substrate can be compensated for, and the temperature can be adjusted. Since the illuminance distribution of the central portion of the substrate (the central portion of the strip shape) is distributed, it is possible to reliably perform temperature control with higher precision. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing a configuration of an incandescent lamp 1 according to a first embodiment of the present invention. Fig. 2 is a partial perspective view showing a configuration of a light-emitting portion formed by the filament bodies 4 1 , 42 , - 44 - 200847227 43 , 44 , 45 and the insulating support 9 of the incandescent lamp 1 of Fig. 1 . Fig. 3 is a view showing that the filament bodies 41, 42, 43, 44, 45 of the incandescent lamp 1 and the light-emitting portion formed by the insulating support body 9 are cut off from the A-A' line of Fig. 2 in the direction of the tube axis. Partial section view of the composition. Fig. 4 is a view showing the filament bodies 41, 42, 43, 44 which are different from the configuration of the light-emitting portions formed by the filament bodies 41, 42, 43, 44, 45 and the insulating support 9 shown in Fig. 3; A partial cross-sectional view showing a configuration of a light-emitting portion formed by 45 and an insulating support 9. Figs. 5(a) and 5(b) are diagrams showing incandescent lamps different from the configuration of the light-emitting portions formed by the insulating bodies 9 of the filament bodies 41, 42, 43, 44, and 45 shown in Fig. 3; A partial front view and a partial cross-sectional view of the light-emitting portions formed by the bodies 41, 42, 43, 44, and 45 and the insulating support 9. 6(a) and 6(b) are diagrams showing incandescent lamps different from the configuration of the light-emitting portions formed by the insulating bodies 9 of the filament bodies 41, 42, 43, 44, and 45 shown in Fig. 3; A partial perspective view and a partial cross-sectional view of a light-emitting portion formed by the bodies 4 1 , 4 2 , 4 3 , 4 4 , 4 5 and the insulating support 9 . Fig. 7 is a perspective view showing the configuration of the light-emitting portions formed by the filament bodies 41, 42, 43, 44, 45 of the incandescent lamp 1 of the second embodiment and the insulating support 10. Fig. 8 is a perspective view showing the configuration of the light-emitting portions formed by the filament bodies 41, 42, 43, 44, 45 of the incandescent lamp 1 of the third embodiment and the insulating support 12. Fig. 9 is a front sectional view showing the apparatus of the light irradiation type heat treatment -45 - 200847227 of the invention of the fourth embodiment. Fig. 1 is a plan view showing the configuration of the first lamp unit 103 and the second lamp unit 104 shown in Fig. 9. Fig. 1 is a cross-sectional view showing a heat treatment apparatus 200 of a prior art. Fig. 12 is a view showing a heating incandescent lamp provided in the upper and lower stages by simplifying the heat treatment apparatus 200 shown in Fig. 11 A perspective view of 203, 204 and the object to be processed 202. Fig. 13 is a cross-sectional view showing a heat treatment apparatus 300 of the prior art. Fig. 14 is a perspective view showing the incandescent lamp 400 previously proposed by the applicant of the present invention. [Description of main component symbols] 1 : incandescent lamp, 2a, 2b: closed part, 3: luminous tube, 41, 42, 4 3, 44, 45: filament body, 411, 421, 431, 441, 451: filament, 411a , 411b, 421a, 421b, 431a, 431b, 441a, 441b, 4 5 1a, 451b: filament, 412, 422, 43, 2, 442, 452: wire, 412a, 422a, 432a, 442a, 452a: wire, 412b, 422b, 432b, 442b, 452b: wires, 4121a, 4221a, 4321a, 4421a, 4521a: vertical wire portions, 4121b, 4221b > 4321b, 4421b, 4521b: vertical wire portions, 4122a, 4222a, 4322a, 4422a, 4522a: horizontal Wire portions, 4122b, 4222b, 4322b, 4422b, 45 22b: horizontal wire portions, 5a, 5b: sealing insulators, 61a, 62a, 63a, 64a, 65a: metal boxes, 61b, 62b, 63b, 64b, 65b: - 46- 200847227 Metal foil, 71a, 72a, 73a, 74a, 75a: external conductor, 71b, 72b, 73b, 74b, 75b: external conductor, 81 a, 82 a, 83 a, 84a, 85a: conductive member, 81b , 82b, 83b, 84b, 85b: conductive member, 9: insulating support, 91, 92, 93, 94, 95: pathway, 91 1, 921, 931, 941, 95 1 · horizontal pathway, 911a, 921a, 931a, 941a, 951a: horizontal pathway, 911b, 921b, 931b, 941b, 951b: horizontal pathway, 912a, 922a ' 932a' 942a > 952a: vertical passage, 912b, 922b, 932b, 942b, 9 5 2b: vertical passage, 913a, 923a, 933a, 943a, 953a: outlet, 913b, 923b, 933b, 943b, 953b: outlet , 913c, 923c, 933c, 943c, 953c : outlets, 913d, 923d, 933d, 943d, 953d: outlets, 961, 962, 963, 964, 965: horizontal open trenches, 961a, 962a, 963 a, 964a, 96 5 a : horizontal open trench, 961b, 962b, 963a, 964a, 965a: horizontal open trench, 961b, 962b, 963b, 964b, 965b: horizontal open trench, 9 7 a, 9 7b: insulating support support ring, i 〇: insulating support, 101: central member '1021a, 1022a, 1023a, 1024a, 1025a: insulating tube, 1021b, l22b, 1023b, 1024b, 1025b: insulating tube 'l〇3a, 103b: fastening member' 12: Insulated support, i21: central part, 1221, 1222, 1223 1224, 1225: partition wall, 1 〇〇: light irradiation type heat treatment device, 1 〇1: quartz window,; [〇2: cavity, 103: first lamp unit, 104: second lamp unit, 105: processed Body, 1〇6: mirror, 1 0 7: cooling air unit, 丨〇8: cooling air supply nozzle, 109: air outlet, 110: cooling air outlet, ηι, 112: 1st fixed station, 1 1 3 : Conductive table, 1 14 : Holding table, i丨5: Power supply unit, i丨6, -47- 200847227 1 1 7 : Power supply 埠, 1 1 8 : Processing station, 1 1 9 : Temperature measuring unit, 1 20 : thermometer, 12 1 : temperature control unit, 122: main control unit, 123: processing gas unit, 124: gas supply nozzle, 125: air outlet, 126: discharge port, S 1 , S 2 : lamp unit housing space. - 48-

Claims (1)

200847227 十、申請專利範圍 1 · 一種白熾燈，屬於 狀的發光管內部，連結有 燈絲的導線所成的複數燈 軸延伸般地依次排列配設 於封閉部的複數的各該導 燈絲分別獨立地饋電的白 在上述盤管狀的燈絲 導線。 2 .如申請專利範圍第 述燈絲內側，配置有沿著 ’而在該當絕緣支撐體， 的導線的複數通路。 3 .如申請專利範圍第 封閉部是配設棒狀的封閉 緣體的外周設置間隔而排 與上述封閉用絕緣體經由 〇 4.一種光照射式加熱 有如申請專利範圍第1項, 從該光源部所放射的光照 5 . —種光照射式加熱 地配置有如申請專利範圍 燈單元，將從該燈單元所 被處理體。 在至少一端形成有封閉部的長管 盤管狀的燈絲與將電力供應於該 絲體，爲各燈絲沿著發光管的管 ，各燈絲體的各該導線對於配設 電性構件被電性地連接而對於各 熾燈，其特徵爲： 內側，插通有上述各該燈絲體的 1項所述的白熾燈，其中，於上 燈絲的中心軸延伸的絕緣支撐體 形成有用以插通上述各該燈絲體 1項所述的白熾燈，其中，上述 用絕緣體，而且在上述封閉用絕 列複數導電性構件，上述發光管 導電性構件被氣密地封閉所形成 處理裝置，其特徵爲：具備配置 所述的白熾燈所成的光源部，將 射於被處理體俾加熱被處理體。 處理裝置，其特徵爲：具備排列 丨第1項所述的複數白熾燈所成的 放射的光照射於被處理體俾加熱 -49-200847227 X. Patent Application No. 1 · An incandescent lamp, which belongs to the inside of an arc tube, the plurality of lamp wires formed by the wires connected to the filaments are arranged in an orderly manner, and the plurality of wires respectively arranged in the closing portion are independently Feed the white filament wire in the tubular shape of the above disk. 2. The inside of the filament according to the scope of the patent application is provided with a plurality of passages along the conductors of the insulating support. 3. The patented range closure portion is provided with a rod-shaped closed edge body at an outer peripheral spacing and is arranged to pass through the above-mentioned sealing insulator via a crucible 4. A light-irradiating heating is as in the first aspect of the patent application, from the light source portion The emitted light 5 is a light-irradiated heating device configured as a light-emitting unit of the patent application, and the object to be processed from the lamp unit. a filament having a long tubular disk having a closed portion formed at at least one end thereof and supplying electric power to the filament body, wherein each filament is along a tube of the light-emitting tube, and each of the wires of each filament body is electrically electrically disposed to the electrical component Connecting, and for each of the above-mentioned lamps, the inner side is inserted with the incandescent lamp of the above-mentioned one of the filament bodies, wherein the insulating support extending on the central axis of the upper filament is formed to be inserted into each of the above-mentioned lamps. In the incandescent lamp according to the above aspect of the present invention, in the above-mentioned insulating body, the processing device is formed by the gas-shielding conductive member being hermetically sealed in the insulating multi-layer conductive member for sealing. The light source unit formed by the incandescent lamp is placed on the object to be processed to heat the object to be processed. A processing apparatus characterized in that the radiation having the radiation of the plurality of incandescent lamps arranged in the first item is irradiated onto the object to be processed and heated -49-
TW097107337A 2007-05-29 2008-03-03 Filament lamp and light irradiation type heat treatment device TW200847227A (en)

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JP2007142266 2007-05-29
JP2008025142A JP4915532B2 (en) 2007-05-29 2008-02-05 Filament lamp and light irradiation type heat treatment equipment

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US11181244B2 (en) 2018-03-26 2021-11-23 Hewlett-Packard Development Company, L.P. Lighting assembly
JP7351247B2 (en) * 2020-03-20 2023-09-27 ウシオ電機株式会社 Halogen lamp

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CN102820208A (en) * 2011-06-08 2012-12-12 无锡华润上华半导体有限公司 Method for controlling temperature of wafer in rapid thermal processing and rapid thermal processing using method
CN102820208B (en) * 2011-06-08 2015-04-22 无锡华润上华科技有限公司 Method for controlling temperature of wafer in rapid thermal processing and rapid thermal processing using method

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