TW200845163A - Wafer dicing method - Google Patents

Wafer dicing method Download PDF

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Publication number
TW200845163A
TW200845163A TW96115767A TW96115767A TW200845163A TW 200845163 A TW200845163 A TW 200845163A TW 96115767 A TW96115767 A TW 96115767A TW 96115767 A TW96115767 A TW 96115767A TW 200845163 A TW200845163 A TW 200845163A
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TW
Taiwan
Prior art keywords
wafer
adhesive layer
present
dies
diced
Prior art date
Application number
TW96115767A
Other languages
Chinese (zh)
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TWI338920B (en
Inventor
Chih-Hung Wu
Chieh Cheng
Kai-Sheng Zhang
guan-yu Zhu
Original Assignee
Atomic Energy Council
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Priority to TW96115767A priority Critical patent/TW200845163A/en
Publication of TW200845163A publication Critical patent/TW200845163A/en
Application granted granted Critical
Publication of TWI338920B publication Critical patent/TWI338920B/zh

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  • Dicing (AREA)
  • Adhesive Tapes (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Processing Of Stones Or Stones Resemblance Materials (AREA)

Abstract

The present invention provides a wafer dicing method, which comprises overlapping a wafer with a plurality of dies to be diced on a surface of a pasting layer, the pasting layer having a plurality of openings partly corresponding to most of the dies to be diced; and dicing the dies of the wafer by the appropriate apparatus. Accordingly, bubbles caused by adhering the wafer to the pasting layer, which induces unequal thickness of the diced wafer elements and ineffective control of wafer-dicing deepness, can be avoided. Besides, the crack phenomenon when picking up the diced dies can be avoided too. Moreover, the use of pasting material is saved and thereby the effect of reducing the manufacturing cost is achieved.

Description

200845163 九、發明說明: • 【發明所屬之技術領域】 本發明是有關於一種晶圓切割方法,尤指一種可 有政控制晶圓切割》、罙度m粒於切割後取下時產 生破裂之情形’且可減少黏貼膠片之使用,以達 低製造成本之功效者。 【先前技術*】 按,一般習用之晶圓3於切割時通常會於其一面 上,置有-整面式之黏貼膠片3 i,之後再對晶圓3 切w所需之晶粒3 2 (如第r同% # ύ匕、乂乐b圖所不),錯以使晶圓 3刀。出晶粒3 2之後由黏貼膠片3 i上取下,以 到具有保濩晶粒3 2之功效。 #虽然,上述習用之晶圓3於切割出晶粒3 2時, 可,由黏貼膠片3 1達到具有保護晶粒3 2之功效, 螂是由於該晶粒32本身之厚度較薄,且表面亦較 平π,因此,該晶粒3 2易與黏貼膠片3 ^之平面產 生強大之吸引力,導致切割後之晶粒32不易於心 膠片3 1取下,並易於晶粒3 2 二' 式較無法符合實際使用時之所需。 【發明内容】 可藉由黏貼層上之多 本發明之主要目的係在於 5 200845163 數穿孔局部對應於多數欲切割之晶粒上,以有效控制 日日[^切副冰度,並避免晶教於切割後取下時產生破裂 之^形,且可減少黏貼膠片之使用,以達到降低製造 成本之功效。 /為達上述之目的,本發明係一種晶圓切割方法, 糸於-黏貼層之一面上層疊設置一具有多數欲切割 日日粒之晶圓,且該黏貼層上係具有多數穿孔,而各穿 部對應於多數欲切割之晶粒,之後再㈣需之 衣置對该晶圓上之晶粒進行切割。 【實施方式】 立。月茶閱帛1圖』所示’係本發明之剖面狀態示 心圖如圖所不.本發明係一種晶圓切割方法,苴係 =貼層1之一面上層疊設置-具有多數欲切割晶 之晶圓2 ’該㈣Η之厚度係介於1〇μηι〜 200_之間,且該黏貼層1上係具有多數穿孔i i, 而各穿孔1 1係局部對應於多數欲切割之晶粒2工, 该晶圓2上多數欲切宝,丨之s T t + κ 乂之曰曰粒2 1與穿孔1 1之局部 :觸面積係介於谓〜50%之間,之後再 置對該晶圓2上之晶粒21進行切割(圖.令未示)。如 =即可藉由黏貼们上多數局部對應於多數欲切割 =曰粒21上之穿孔11,而於切割後可易於將黏貼 層1取下’而避免晶粒21於切割後取下時產生破裂 之'_’且可減少黏貼膠片之使用’以達到降低製造 6 200845163 aa 成本之功效。如是’ |^上述之結構構成—全新之 圓切割方法。 請參閱『第2A圖』所示’係本發明黏貼層之第 一實施例示意圖。如圖所示:本發明黏貼層i上之穿 孔11係可依實際使用時之所需設置為呈多數整齊排 列之圓形穿孔,其中各個圓形穿孔也可非常緊密如『第 2 B圖』所示。 請參閱『第3圖』所示,係本發明黏貼層之第二 實施例示意圖。如圖所示:本發明黏貼層丄上之穿孔 1 la係可依實際使用時之研需設置為呈多數 列之矩形穿孔。 片' 請參閱『第4圖』所示,係本發明黏貼層之第二 實施例示意圖。如圖所示:本發明黏貼層丄上之穿: 1 lb係可依實際使料之所需設置呈 環繞之曲弧形穿孔。 徘列 綜上所述,本發明晶圓切割方法可有效改善 之種種缺點’可藉由黏貼層上之 :: 多數欲切割之晶粒上,以避免晶粒於切割== 生:裂之情形’且可減少黏貼膠片之使用,以達二 低製造成本之功效,進而使本發明之産生能更進牛 件更梅?者之所須’確已符合發明專 η 要件菱依法提出專利申請。 200845163 惟以上所述者,僅為本發明之較佳實施例而已, 當不能以此限定本發明實施之範圍;故,凡依本發明 申請專利範圍及發明說明書内容所作之簡單的等效變 化與修飾,皆應仍屬本發明專利涵蓋之範圍内。 200845163 【圖式簡單說明】 第1圖’係本發明之剖面狀態示意圖。 第2 A圖,係本發明黏貼層之第一實施例圓形穿孔示 意圖。 第2 B圖’係本發明黏貼層之第一實施例緊密圓形穿 孔示意圖。200845163 IX. Description of the invention: • Technical field to which the invention pertains The invention relates to a wafer cutting method, in particular to a controllable wafer cutting method, in which the enthalpy m particles are broken after being removed after cutting. The situation 'can also reduce the use of adhesive film to achieve the effect of low manufacturing costs. [Prior Art*] According to the conventional wafer 3, it is usually placed on one side of the wafer 3, and the entire surface of the wafer 3 i is placed, and then the wafer 3 is cut for the wafer 3 2 (If the r is the same as the % # ύ匕, 乂乐b diagram does not), the wrong to make the wafer 3 knife. After the crystal grains 3 2 are removed, they are removed from the adhesive film 3 i to have the effect of protecting the crystal grains 3 2 . #Although, the above-mentioned conventional wafer 3 can achieve the effect of protecting the crystal grains 3 2 from the adhesive film 3 1 when the crystal grains 3 2 are cut, because the thickness of the crystal grains 32 itself is thin and the surface It is also flat π, therefore, the die 3 2 is easy to exert a strong attraction with the plane of the adhesive film 3 ^, so that the die 32 after cutting is not easy to remove the core film 3 1 and is easy to die 3 2 II' The formula is less than what is needed in actual use. SUMMARY OF THE INVENTION The main purpose of the invention by the adhesive layer is that the number of perforations partially corresponds to the majority of the grains to be cut, so as to effectively control the day and the day, and avoid the crystal education. When it is removed after cutting, the shape of the crack is generated, and the use of the adhesive film can be reduced to achieve the effect of reducing the manufacturing cost. For the above purposes, the present invention is a wafer dicing method in which a wafer having a plurality of dicing particles to be cut is laminated on one side of the adhesive layer, and the adhesive layer has a plurality of perforations thereon. The wear portion corresponds to the majority of the grains to be cut, and then the (4) required clothing is used to cut the crystal grains on the wafer. [Embodiment] Standing. The illustration of the cross-sectional state of the present invention is shown in the figure of the present invention. The present invention is a wafer cutting method, and the system is laminated on one side of the layer 1 - having a plurality of crystals to be cut. The wafer 2' has a thickness of between 1 〇μηι and 200_, and the adhesive layer 1 has a plurality of perforations ii, and each of the perforations 11 corresponds locally to most of the crystals to be cut. The wafer 2 is mostly cut, and the s T t + κ 曰曰 曰曰 2 2 and the perforated 1 1 part: the contact area is between ~50%, and then the crystal is placed The die 21 on the circle 2 is cut (Fig. order not shown). For example, if the majority of the adhesives correspond to the majority of the perforations 11 to be cut = the granules 21, the adhesive layer 1 can be easily removed after cutting to avoid the formation of the dies 21 after being removed. The '_' of the crack can reduce the use of the adhesive film to achieve the effect of reducing the cost of manufacturing 6 200845163 aa. If it is '|^ the above structure constitutes a new round cutting method. Referring to the "Fig. 2A", a schematic view of a first embodiment of the adhesive layer of the present invention is shown. As shown in the figure: the perforation 11 on the adhesive layer i of the present invention can be set as a plurality of circular perforations arranged in a neat manner according to the actual use, wherein each circular perforation can also be very close as shown in the second figure B. Shown. Referring to Fig. 3, there is shown a schematic view of a second embodiment of the adhesive layer of the present invention. As shown in the figure: the perforated 1 la system on the adhesive layer of the present invention can be set as a plurality of rectangular perforations according to the research requirements in actual use. The sheet 'see 'Fig. 4' is a schematic view of a second embodiment of the adhesive layer of the present invention. As shown in the figure: the wearing layer of the adhesive layer of the present invention: 1 lb can be arranged in a curved curved shape according to the actual setting of the material. As described above, the wafer dicing method of the present invention can effectively improve various defects' by the adhesive layer:: Most of the crystal grains to be cut to avoid the grain being cut == raw: cracked 'And can reduce the use of adhesive film, in order to achieve the effect of two low manufacturing costs, so that the production of the present invention can be more pleasing to the cattle. The person must have met the invention. The above is only the preferred embodiment of the present invention, and the scope of the present invention is not limited thereto; therefore, the simple equivalent changes made according to the scope of the present invention and the contents of the description of the invention are Modifications are still within the scope of the invention. 200845163 [Simplified description of the drawings] Fig. 1 is a schematic view showing the state of the present invention. Fig. 2A is a circular perforation of the first embodiment of the adhesive layer of the present invention. Fig. 2B is a schematic view of a close circular perforation of the first embodiment of the adhesive layer of the present invention.

第3圖,係本發明黏貼層之第二實施例示意圖。 第4圖,係本發明黏貼層之第三實施例示意-。 第5圖,係習用之剖面狀態示意圖。 【主要元件符號說明】 (本發明部份) 黏貼層1 穿孔1 1 晶圓2 晶粒2 1 (習用部份) 晶圓3 黏貼膠片3 1 晶粒3 2 9Figure 3 is a schematic view showing a second embodiment of the adhesive layer of the present invention. Fig. 4 is a view showing a third embodiment of the adhesive layer of the present invention. Figure 5 is a schematic view of the profile state of the conventional use. [Main component symbol description] (part of the present invention) Adhesive layer 1 Perforation 1 1 Wafer 2 Grain 2 1 (conventional part) Wafer 3 Adhesive film 3 1 Grain 3 2 9

Claims (1)

200845163 2 4 _、申請專利範園: •一種晶圓切财法,其係於—㈣層之_面上^ =:州數欲切割晶粒之晶圓,且該黏貼 =多數穿孔,而各穿孔係局部對應於多數欲 進再以所需冬㈣該晶圓上之晶粒 .,申請專利範圍第1項所述之晶圓切割方法,並 ’該黏貼層之厚度係介们一〜20—之間 依申請專利範圍第1項 圓示1貝所述之晶圓切割方法 争,該黏貼層之穿孔係呈多數整齊排列之圓形 Γ申請專利範圍第1項所述之晶圓切割方法 4黏貼層之牙孔係呈多數整齊排列之矩形 依申請專利範圍第1 k 1 祀国弟1項所述之晶圓切割方法 由,今大洚U 口1« 极、‘ 其 其 其 中’該黏貼層之穿孔孫〇 L係乏夕數整齊排列之曲弧形6 ·依申請專利範圍第]百 固弟1項所述之晶圓切割方法,肩 中’纟亥晶圓上多數欲切堂丨 ^ 致奴切釗之晶粒與穿孔之接觸面赛 係”於1%〜50%之間。 10200845163 2 4 _, application for patent garden: • A wafer cutting method, which is on the _ surface of the (four) layer ^ =: the number of wafers to be cut by the state, and the paste = most perforations, and each The perforation system partially corresponds to the majority of the desired grain (four) on the wafer on the wafer. The wafer cutting method described in the first application of the patent scope, and the thickness of the adhesive layer is one to 20 - According to the wafer cutting method described in the first item of the patent application, the wafer cutting method described in the first item, the perforation of the adhesive layer is a plurality of neatly arranged circular wafers. 4 The adhesive layer of the adhesive layer is a rectangle that is arranged in a neatly arranged shape. According to the patent application, the wafer cutting method described in the 1st k 1 祀 Guodi 1 item, today's Dagu U port 1 « pole, 'their one' The perforation of the adhesive layer is performed by the 〇 〇 L 乏 夕 夕 整 · · · · · · · · · · · · · · · · · · · · · · 依 依 依 依 依 依 依 依 依 依 依 依 依 依丨^ The contact surface between the die and the perforation of the slaves is between 1% and 50%. 10
TW96115767A 2007-05-03 2007-05-03 Wafer dicing method TW200845163A (en)

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TW200845163A true TW200845163A (en) 2008-11-16
TWI338920B TWI338920B (en) 2011-03-11

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