200843007 九、發明說明： 【發明所屬之技術領域】 本發明侧於-種偵測半導體製程反應室溫度分佈的方法，特別是 關於一種偵測反應室内所置放之晶圓溫度分佈的 【先前技術】 反應室係半導體製程中的基本設備，其係用來進行氧化、沈積、熱 處理及除氣魏程參數。而此程序巾，溫度係最重要的製程參數，其決 定該程序的良率。然而，要對於反應室的溫度進行控制並不容易，此乃 由於反應至係藉由諸如熱燈絲等加熱器來供應熱源，而製程巾需要經過 升溫及對於加熱㈣調控，但加熱器本身的溫度並無法錢反應反應室 内的實際溫度，雖然，可藉由在反應室内裝設她合器咖咖丨⑺叩丨沉) 來幫助監控溫度’獨當腔壁上_翼_合器溫度上升或下降達到一 數值t往往加熱為的控制已經遠離適當的工作點。此外，晶圓所接收 到的熱傳也依__台特性有密_關係，因此在製程上通常必須仰 賴經驗上的觸。因此，如何獲知關在每-機台特性下所接收到的熱 傳狀況’成為製程與設備I程師概汲營營努力的方向。 因此’本發明提出—種偵測反應室室内晶圓溫度分佈的方法，以建 立出晶圓在每-機台中的每_區域的熱傳特性。 【發明内容】 、本，立二t主要目的’在於提供—種偵測反應室内晶®溫度分佈的方 σ效獲知㈤目在反應室内時每—區域所接_的熱傳量。 土使2之另目的’在於提供—種價測反應室内晶圓溫度分佈的方 效避免因溫度控管失效所可能引起的製程失效，以及不必要 的成本浪費。 祕於目的’在於提供—種簡便且可精確獲知晶®上每〆區 S ;本二;收到的熱傳量的偵測反應室内晶圓溫度分佈的方法。 s /、—種制反應室内晶圓溫度分佈的方法，其—實施態樣 5 200843007 包括下列步驟，首先提供-晶圓；於晶圓上形成—電阻值會隨著溫度變 =的&控層，將^置於-_之反應腔室内，進行熱處理；以及量測 &控層電阻值的Μ化，以獲得反應腔室内進行升溫時，晶圓之各區域 熱狀態分佈圖。 兹為使#審查委員對本發明之目的、技術内容、特點及所達成之 功效更有進-步之瞭解與認識，謹佐以較佳之實施例圖及 明，說明如後： 【實施方式】 本發明係有關-種備測反應室内晶圓溫度分佈的方法，其能夠精確 的獲知位於反應室内之晶圓於熱處理時各個區域所接收到的敎傳狀況。 —首先，選定-會縣溫度變化赴修做變之_層。於本發明 之貫施例中係選用銘（ΑΙ)層、鈦㈤層堆疊層作為制層，因為紹的 電阻值為3UQ-Cm，鈦的電阻值為47υΩ，，而紹鈦中間相㈤丁^的 電阻值52 υΩ-cm。在高溫下，！呂與鈦將視溫度反應形成結鈦中間相，其 反應式如下列所示： A! + Ti -► AlsTi 而紹鈦中間相（AUj)的反應比例乃取決於下列方程弋· k2=k〇2eXP (_Q/RT)，其中 k 是反應比例（reaction ra⑻·，Q 是反 應能（reactive energy)，τ 是溫度。 由上述反應式可發現溫度對於減中間相的形成扮演相當重要的角 色，因此，將藉由此-特性應用於_反應簡晶圓接受到熱傳量。 而’偵測方法，請參閱第]圖，其係本發明之步驟流程圖。先如步 驟S1所述，提供-晶圓，而此一晶圓可以是一個控片（Dummy);接 續，如步驟S2所述，於該晶圓上沈積形成一監控層，其依序為一銘（AI) 層、鈦ΓΠ)層、氮化鈦⑽）層，其中該氮化鈦層係用以保護欽層， 以避免鈦層暴露於空氣中產生氧化，而影響其電阻值；再如步驟S3所 述，將晶BJ定位於特定的位置，此時並提供量測晶_位置資料給反應 200843007 至中之機械手臂，讓機械手臂得以精確地抓取晶圓到反應室中進行溫度 分佈偵測，並對晶圓進行熱處理；最後，如步驟S4所述，可藉由測量該 晶圓之監控層電阻變化，來精確的獲知置於反應室内的晶圓各區域溫度 . 分佈的狀態。 Λ \ 請參閱第2 (a)圖，其係利用本發明之偵測反應室内晶圓溫度分佈 •的方法所獲得之APPk Materials® Producer®反應室内晶圓所接收到的 熱傳溫度分佈圖。其中該熱處理時間18〇秒。由第2 (a)圖中可發現中 心點的溫度較為偏高。為進一步驗證利用本發明之偵測方法所得之第2 (a)圖可信度，請參閱第2⑻圖所示，其係於同一製程參數下之同 一反應室利用熱耦合器進行量測所得之結果。可驗證得知確實在以200843007 IX. Description of the Invention: [Technical Field] The present invention is directed to a method for detecting a temperature distribution of a semiconductor process chamber, and more particularly to a method for detecting a temperature distribution of a wafer placed in a reaction chamber. 】 Reaction chamber is the basic equipment in the semiconductor process, which is used for oxidation, deposition, heat treatment and degassing parameters. And this program towel, temperature is the most important process parameter, which determines the yield of the program. However, it is not easy to control the temperature of the reaction chamber because the reaction is to supply the heat source by a heater such as a hot filament, and the process towel needs to be heated and regulated for heating (four), but the temperature of the heater itself. It is not possible to react to the actual temperature in the reaction chamber, although it is possible to help monitor the temperature by simply installing her clutches in the reaction chamber (7). The temperature on the wall is increased or decreased. A control that reaches a value t tends to be heated away from the proper operating point. In addition, the heat transfer received by the wafer is also closely related to the characteristics of the __ station, so it is often necessary to rely on empirical touches in the process. Therefore, how to know the heat transfer status received under the characteristics of each machine becomes the direction of the process and equipment I program. Therefore, the present invention proposes a method of detecting the temperature distribution of the wafer in the reaction chamber to establish the heat transfer characteristics of the wafer in each region of each of the stages. SUMMARY OF THE INVENTION The main purpose of the present invention is to provide a method for detecting the temperature distribution of the crystal in the reaction chamber. (5) The heat transfer amount per unit area when the reaction chamber is in the reaction chamber. The other purpose of the soil is to provide a measure of the temperature distribution of the wafer in the reaction chamber to avoid process failures due to temperature control failure and unnecessary cost waste. The secret purpose is to provide a simple and accurate way to know the area of each wafer on the crystal® S; this two; the heat transfer amount received to detect the indoor wafer temperature distribution. s /, - Method for seed temperature distribution in a reaction chamber, - Embodiment 5 200843007 includes the following steps, first providing - wafer; forming on the wafer - resistance value will change with temperature = control The layer is placed in the reaction chamber of -_ for heat treatment; and the measurement & resistance of the layer is controlled to obtain a thermal state distribution map of each region of the wafer when the temperature is raised in the reaction chamber. In order to make the reviewer's purpose, technical content, features and efficacies of the present invention more in-depth understanding and understanding, please refer to the preferred embodiment and the following description: [Embodiment] The invention relates to a method for preparing a temperature distribution of a wafer in a reaction chamber, which can accurately know the rumbling condition received by each region of the wafer located in the reaction chamber during heat treatment. - First, select the temperature change in the county to go to repair and change. In the embodiment of the present invention, the stack layer of the Ming (ΑΙ) layer and the titanium (five) layer is selected as the layer, because the resistance value is 3UQ-Cm, the resistance value of titanium is 47υΩ, and the intermediate phase of the titanium (five) is The resistance value of ^ is 52 υ Ω-cm. At high temperatures,! Lu and titanium will react with temperature to form a titanium-titanium intermediate phase. The reaction formula is as follows: A! + Ti -► AlsTi and the reaction ratio of the titanium intermediate phase (AUj) depends on the following equation 弋· k2=k〇 2eXP (_Q/RT), where k is the reaction ratio (reaction ra(8)·, Q is the reactive energy, and τ is the temperature. From the above reaction formula, it can be found that the temperature plays a very important role in reducing the formation of the mesophase, so The heat transfer amount is obtained by applying the characteristic to the _reaction simple wafer. The 'detection method, please refer to the second figure, which is a flow chart of the steps of the present invention. First, as described in step S1, provide - Wafer, and the wafer may be a Dummy; and subsequently, as described in step S2, a monitoring layer is deposited on the wafer, which is sequentially an AI layer and a titanium crucible. a layer of titanium nitride (10)), wherein the titanium nitride layer is used to protect the layer of tantalum to prevent the titanium layer from being exposed to air to cause oxidation, thereby affecting the resistance value; and then, as described in step S3, positioning the crystal BJ At a specific location, at this time, the measurement of the crystal_location data is provided to the reaction 200843007 to The robot arm allows the robot arm to accurately grasp the wafer into the reaction chamber for temperature distribution detection and heat treatment of the wafer. Finally, as described in step S4, the resistance of the monitor layer of the wafer can be measured. To accurately know the temperature and distribution of the various regions of the wafer placed in the reaction chamber. Λ \ Please refer to Figure 2 (a), which is a heat transfer temperature profile received by the APPk Materials® Producer® reaction chamber wafer obtained by the method for detecting the wafer temperature distribution in the reaction chamber of the present invention. The heat treatment time is 18 sec. From the 2nd (a) figure, the temperature at the center point is relatively high. To further verify the reliability of the second (a) graph obtained by the detection method of the present invention, please refer to the second (8) diagram, which is measured by the thermal coupler in the same reaction chamber under the same process parameters. result. Can be verified that it is indeed
Material® Producer®反應室内的晶圓中央位置會受到較高的熱處理溫 度。 杯閱第3 (a)圖，其係利用本發明之制反應室内晶圓溫度分佈 的方法來偵測置於Apply Materials® Endura® degas chamber内的晶圓 所接收的溫度分佈狀況；其中該熱處理時間180秒。以及參閱利用熱耗 合益對Apply Materials® Endura® degas chamber内的晶圓溫度分佈量 測結果的第3(b)圖。由第3(3)圖中可發置於八叩_獅北@£__ ,degaS Chambe「内的晶圓在11點鐘的方向所接收到溫度明顯高於在5 •點鐘的方向。而此-結論同樣的能在_餘合器之量測結 ； 圖中發現。 綜上所述，本發明為—種_反應室内晶圓溫度分佈的方法，其係 利用易受溫度改變，而導致引起電阻鋪著變動之銘層、致触氮;匕欽 層，來形成-位於晶圓上的堆疊層，藉由此一堆疊層的阻值來偵 ，反應室内晶圓受到熱處理溫度的分佈狀況。本發明係對於習知對反應 室内晶圓接受熱傳所產生的溫度難以監控關題提出—簡單 ^ ^羊^形化分佈財絲解決，使對反應㈣晶圓溫度秘制更具效 率與間便。 7 200843007 准以上所述者，僅為本發明—較佳實_ ==/】爾㈣输鋼增麵圍内。 第1圖係為本發明之流程示意圖。 第2⑷圖為例用本發明對App丨y Mater丨滅pr〇duc⑽反應室内進行 偵測的結果。 第2(b)圖為利用熱敏電阻對Apply (Materials® Producer®反應室内進 行偵測的結果。 第 3 (a)圖為利用本發明對 Apply Materials® Endura® degas chamber 反應室内進行偵測的結果。 第 3(b)圖為利用熱敏電阻對 Apply Materials® Endura® degas chamber 反應室内進行偵測的結果。 【主要元件符號說明】The center of the wafer in the Material® Producer® chamber is subject to high heat treatment temperatures. Cup 3 (a), which utilizes the method of fabric temperature distribution in a reaction chamber of the present invention to detect the temperature distribution received by a wafer placed in an Applied Materials® Endura® degas chamber; Time is 180 seconds. See also Figure 3(b) for the measurement of wafer temperature distribution in the Applied Materials® Endura® degas chamber using heat recovery. From the 3rd (3) figure, the wafers that can be placed in the gossip _ lion north @£__ , degaS Chambe "the temperature received at 11 o'clock is significantly higher than the direction at 5 o'clock. This - the same conclusion can be measured in the amount of _ residual device; found in the figure. In summary, the present invention is a method for the temperature distribution of the wafer in the reaction chamber, which is susceptible to temperature changes, resulting in The layer of the inductive layer causing the resistance is changed, and the nitrogen is touched; the layer of the layer is formed to form a stacked layer on the wafer, and the resistance of the stacked layer is detected, and the distribution of the heat treatment temperature of the wafer in the reaction chamber is received. The present invention is directed to the problem that it is difficult to monitor the temperature generated by the heat transfer of the wafer in the reaction chamber, which is difficult to monitor, and the simple solution is to make the reaction (4) wafer temperature secret more efficient. 7 200843007 The above-mentioned ones are only for the present invention - preferably _ == / _ er (4) steel transfer surface area. Figure 1 is a schematic flow chart of the present invention. Figure 2 (4) for the example The present invention detects the results of the App丨y Mater quenching pr〇duc(10) reaction chamber. Figure 2(b) shows the utilization The results of the detection of the sensible resistance in the Application (Materials® Producer® reaction chamber. Figure 3 (a) shows the results of the detection of the Applied Materials® Endura® degas chamber reaction chamber using the present invention. Figure 3(b) shows The results of the detection of the Applied Materials® Endura® degas chamber reaction chamber using a thermistor. [Main component symbol description]