TW200841940A - Pressure wave generator and heat dissipation method thereof - Google Patents

Pressure wave generator and heat dissipation method thereof Download PDF

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TW200841940A
TW200841940A TW96150020A TW96150020A TW200841940A TW 200841940 A TW200841940 A TW 200841940A TW 96150020 A TW96150020 A TW 96150020A TW 96150020 A TW96150020 A TW 96150020A TW 200841940 A TW200841940 A TW 200841940A
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Taiwan
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heat
substrate
pressure wave
generating device
wave generating
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TW96150020A
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Chinese (zh)
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Masato Hayashi
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Tokyo Electron Ltd
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    • GPHYSICS
    • G10MUSICAL INSTRUMENTS; ACOUSTICS
    • G10KSOUND-PRODUCING DEVICES; METHODS OR DEVICES FOR PROTECTING AGAINST, OR FOR DAMPING, NOISE OR OTHER ACOUSTIC WAVES IN GENERAL; ACOUSTICS NOT OTHERWISE PROVIDED FOR
    • G10K15/00Acoustics not otherwise provided for
    • G10K15/04Sound-producing devices

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Multimedia (AREA)
  • Apparatuses For Generation Of Mechanical Vibrations (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Motor Or Generator Cooling System (AREA)

Abstract

To enhance the durability of a pressure wave producing apparatus by preventing the lowering of the sound pressure of the sonic wave produced by the pressure wave producing apparatus. The pressure wave producing device 1 is equipped with a substrate 2 having heat conductivity, the heat insulating layer 3 formed on one main surface of the substrate 2, the heat generator 4 formed on the heat insulating layer 3 and receiving the application of a current containing an AC component to generate heat and a heat sink 5 formed in contact with the other main surface of the substrate 2 and for diffusing the heat of the substrate 2 to the outside of the substrate 2. Further, the heat sink 5 may be equipped with a cooling means for performing forcible cooling. Preferably, the heat insulating layer 3 comprises nano-crystal silicon. Furthermore, the heat generator 4 may contain gold or tungsten.

Description

200841940 九、發明說明: 【發明所屬之技術領域】 本發明係關於精由對氣體週期地加熱,使其產生壓力波 (疏密波)之壓力波產生裝置及其散熱方法。 【先前技術】 以往,宫有藉由對氣體週期地加熱,以形成空氣之疏 在,使其產生音波之裝置之提案(例如參照專利文獻i至BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a pressure wave generating device which heats a gas periodically to generate a pressure wave (sparse wave) and a heat radiating method thereof. [Prior Art] In the past, there has been a proposal for a device for generating sound waves by periodically heating a gas to form a sound (for example, refer to Patent Document i to

4)。在專利文獻1所記載之裝置中,在基板上形成作為發 熱體之薄臈狀之導電體。電流通至此導電體而發熱時,可 將熱傳導至接觸於導電體之表面之空氣層。另夕卜,在此裝 置:’在發熱體與基板之間形成熱傳導率極小之多孔質層 η刀子層itb夕孔質層及高分子層成為使發熱體與基板 保持熱的絕緣之熱絕緣層。藉此熱絕緣層,將由金屬薄膜 ^基板之熱的流失抑制於較小值,並對驅動金屬薄膜之信 ^之功率’增大在金屬薄膜所生之溫度變化之比率。此結 ^旦了^傳達至與金屬薄膜表面接觸之线層之磨力波 月匕里’提高音波之產生效率。 在專利文獻2中,福千·你— m m 4h ^ '、·使知加至發熱體電極之電 :::::::非:_,狀或猝發波狀… 音之時間二:技:“對時間平均投入電力之產生 在專利文獻3中,揭示 數孔,將其多孔度設定 術。又,在專利文獻4中 •在隔熱層之奈米結晶矽形成多 於75/〇以上而提高音壓位準之技 ’揭不·、將隔熱層之奈米結晶矽 I26322.doc 200841940 之厚度設定為振盪之超音波之頻率所規定之熱擴散長以上 且熱擴散長加上5μιη之厚度以下,藉以提高耐電力特性, 增大最大產生音壓之技術。 [專利文獻1]曰本特開平11_300274號公報 [專利文獻2]日本特開2〇〇3-154312號公報 [專利文獻3]曰本特開2005-73 197號公報 [專利文獻4]日本特開2005-269745號公報 【發明内容】4). In the device described in Patent Document 1, a thin conductive body as a heat generating body is formed on a substrate. When a current flows to the conductor to generate heat, heat can be conducted to the air layer contacting the surface of the conductor. In addition, in this device: 'a porous layer having a very small thermal conductivity between the heating element and the substrate. The knive layer and the polymer layer serve as a thermal insulating layer that keeps the heating element and the substrate thermally insulated. . With this thermal insulating layer, the loss of heat from the metal thin film substrate is suppressed to a small value, and the power of the signal for driving the metal thin film is increased by the ratio of the temperature change generated by the metal thin film. This knot has been transmitted to the ground wave of the wire layer in contact with the surface of the metal film to improve the efficiency of the sound wave generation. In Patent Document 2, Fu Qian·you—mm 4h ^ ',·I know that the electric charge to the heating element electrode::::::: Non: _, shape or wavy wave... Time 2: Technique: "In the case of the generation of the average electric power, the number of holes is disclosed in Patent Document 3, and the porosity is set. Further, in Patent Document 4, the nanocrystals in the heat insulating layer are formed more than 75/〇. The technique of improving the sound pressure level is not disclosed, and the thickness of the nanocrystal crystallization layer I26322.doc 200841940 of the heat insulating layer is set to be longer than the thermal diffusion length specified by the frequency of the ultrasonic vibration of the oscillation and the thermal diffusion length is 5 μm. In the following, the technique of the present invention is disclosed in Japanese Patent Application Laid-Open No. Hei. No. Hei. No. Hei. No. Hei. Japanese Patent Laid-Open Publication No. 2005-269745 (Patent Document 4)

[發明所欲解決之問題] 然而,在如上述之裝置中,增大對發熱體之施加電壓 寸基板荨,即整個系統之溫度會因發熱體之發熱之直流 成分(無助於壓力波產生之發熱之單純增加成分)而過度地 上升。整個系統之溫度上升時,發熱體之電阻會上升。發 熱體之電阻上升時’即使施加電壓為相同位準,發熱體之 發熱量也會減少,產生之疏密波之最大壓力降低,產生之 =密波之振幅,即音壓變小。又,整個系統之溫度上升 時’發熱體之溫度不會下降’發熱體之週邊空氣之溫度會 上升而週邊空氣之最高溫度與最低溫度之差變窄,温度對 比變小。溫度對比變小時,產生之疏密波之振幅,即音壓 會變小。另外’整個系統之溫度上升而成為高溫時,會產 生熱應力引起之構造性損傷,發熱體之金屬擴散至隔熱層 之奈米結晶石夕。其結果,壓力波產生裝置之壽命變短。 本發明制於此種狀況而完成者,其目的在於提供一種 防止歷力波(音波)之音歷降低’且耐久性較高之壓力波產 126322.doc 200841940 生裝置及其散熱方法。 [解決問題之技術手段] 為達成上述目的,本發明之第〗觀點之壓力波產生裝置 (1)之特徵在於包含:熱傳導性之基板(2);隔熱層(3),其 係形成於該基板之一方主面;導體層(4),其係形成於該隔 熱層上,藉使含交流成分之電流流通而發熱;及散熱機構 (5) ’其係接觸設置於前述基板之他方主面,使前述基板之 熱擴散至前述基板之外。 又,本發明之第2觀點之壓力波產生裝置之散熱方法之 特徵在於該壓力波產生裝置係包含:熱傳導性之基板(2); P田熱層(3) ’其係形成於該基板之一方主面;及導體層 (4),其係形成於該隔熱層上,藉使含交流成分之電流流通 而备熱,其散熱方法係接觸前述基板之他方主面而設置散 熱機構(5),藉前述散熱機構(5)使前述基板之熱擴散至前 述基板之外。 【實施方式】 以下,一面參照圖式,一面詳細說明有關本發明之實施 型態。又,在圖中,對同一或相當部分附以同一符號,其 說明不予重複。在圖1(a)、圖1(b)表示本發明之一實施型 悲之壓力波產生裝置之構成。在圖1 (a)表示含後述之驅動 電路之連接之平面圖,在圖1(b)表示圖l(a)之χ-χ線剖面 圖。 本實施型態之壓力波產生裝置1係向圖1 (a)之紙面上方產 生壓力波(音波)之裝置。如圖l(a)、圖1 (b)所示,壓力波產 126322.doc 200841940 生裝置1係包含基板2、隔熱層3、發熱體4、及散熱片5。 基板2例如係由體矽等所形成。在基板2之一 回(紙面 上方側之主面)例如形成多孔質之奈米結晶矽(以下稱此 Si)之隔熱層3。以接觸該隔熱層3上此之方式形成發熱體 4。發熱體4係導電性之金屬,例如金(au)或鎮(w)等構成 之薄膜。發熱體4係以特定間隔蛇行。在發熱體4之兩端部 电性連接驅動電路6。驅動電路6係在發熱體4之兩端施加 脈衝電壓或交流電壓。脈衝電壓或交流電壓係以特定頻率 ω被間歇驅動。藉此電壓之間歇驅動,使發熱體4發熱。 發熱體4之發熱量隨著被施加之電壓之變動而變動。如 此,將變動之發熱體4之發熱之變動成分稱為「發熱之交 流成分」。又,在發熱體4中,也會依其熱容量而產生無助 於壓力波之產生之發熱之單純增加成分之直流成分。以 下,將此稱為「發熱之直流成分」。在本實施型態中,將 Pm熱層3之厚度形成為對於發熱之交流成分且與以隔熱層3 之熱傳導率及每單位體積之熱容量所決定之熱擴散長相同 程度。如此一來,發熱之交流成分對基板2側,會被隔熱 g 3所m熱,可使發熱之直流成分有效地向熱傳導性較大 之基板2發散。隔熱層3之材質為nc_si之情形,隔熱層3之 厚度例如可设定為5 gm〜2〇〇 程度。隔熱層3之厚度可依 所產生之音波之頻帶適宜地予以變更。 在與基板2之形成有隔熱層3及發熱體4之面相反側之面 (他方主面)設有散熱片5。散熱片5被密接安裝於此主面。 政熱片5係以熱傳導奉高之材質,例如鋁、銅等金屬所形 126322.doc 200841940 成。在散熱片5,形成多數散熱片5f。藉此散熱片5f增大散 熱片5接觸於空氣之面積。散熱片5使基板2之熱向紙面下 側之空氣擴。 如上所述,藉隔熱層3,發熱之交流成分對基板2側之熱 被隔熱層3所隔熱,但對應於發熱體4之熱容量而發生之發 熱體4所發生之發熱之直流成分則會傳達至基板2。基板2 之熱容量雖充分大於發熱體4及隔熱層3之熱容量,但相當[Problem to be Solved by the Invention] However, in the apparatus as described above, the application of the voltage to the heating element is increased, that is, the temperature of the entire system is due to the DC component of the heating element (which does not contribute to the generation of pressure waves). The fever alone increases the composition) and rises excessively. When the temperature of the entire system rises, the resistance of the heating element rises. When the resistance of the heating element rises, even if the applied voltage is at the same level, the amount of heat generated by the heating element is reduced, and the maximum pressure of the generated dense wave is lowered, resulting in the amplitude of the dense wave, that is, the sound pressure becomes small. Further, when the temperature of the entire system rises, the temperature of the heating element does not decrease. The temperature of the surrounding air of the heating element rises, and the difference between the highest temperature and the lowest temperature of the surrounding air becomes narrow, and the temperature contrast becomes small. When the temperature contrast becomes smaller, the amplitude of the sparse wave generated, that is, the sound pressure becomes smaller. Further, when the temperature of the entire system rises to a high temperature, structural damage due to thermal stress occurs, and the metal of the heating element diffuses to the nanocrystalline crystal of the heat insulating layer. As a result, the life of the pressure wave generating device becomes short. The present invention has been made in view of such a situation, and an object thereof is to provide a pressure wave product which prevents deterioration of the sound history of the history wave (sound wave) and which has high durability, and a heat dissipation method thereof. [Means for Solving the Problems] In order to achieve the above object, a pressure wave generating device (1) according to a first aspect of the present invention is characterized by comprising: a thermally conductive substrate (2); and a heat insulating layer (3) formed in a main surface of the substrate; a conductor layer (4) formed on the heat insulating layer to generate heat by circulating an electric current containing an alternating current component; and a heat dissipating mechanism (5) 'contacting the other side of the substrate The main surface diffuses heat of the substrate to the outside of the substrate. Further, in the heat radiation method of the pressure wave generating device according to the second aspect of the present invention, the pressure wave generating device includes: a thermally conductive substrate (2); and a P field thermal layer (3) formed on the substrate. a main surface; and a conductor layer (4) formed on the heat insulating layer, and heat is generated by circulating an electric current containing an alternating current component, and the heat dissipating method is to contact the other main surface of the substrate to provide a heat dissipating mechanism (5) The heat of the substrate is diffused outside the substrate by the heat dissipation mechanism (5). [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals and the description is not repeated. Fig. 1 (a) and Fig. 1 (b) show the configuration of a sad pressure wave generating device according to an embodiment of the present invention. Fig. 1(a) is a plan view showing the connection of a driving circuit to be described later, and Fig. 1(b) is a cross-sectional view taken along the line χ-χ in Fig. 1(a). The pressure wave generating device 1 of the present embodiment is a device for generating a pressure wave (sound wave) above the paper surface of Fig. 1(a). As shown in Fig. 1 (a) and Fig. 1 (b), the pressure wave product 126322.doc 200841940 raw device 1 includes a substrate 2, a heat insulating layer 3, a heat generating body 4, and a heat sink 5. The substrate 2 is formed, for example, by a body crucible or the like. On one of the substrates 2 (the main surface on the upper side of the paper surface), for example, a heat insulating layer 3 of a porous nanocrystalline yttrium (hereinafter referred to as Si) is formed. The heat generating body 4 is formed in such a manner as to contact the heat insulating layer 3. The heating element 4 is a conductive metal such as a film made of gold (au) or town (w). The heating element 4 is meandered at a specific interval. The drive circuit 6 is electrically connected to both end portions of the heating element 4. The drive circuit 6 applies a pulse voltage or an alternating voltage to both ends of the heating element 4. The pulse voltage or the alternating voltage is intermittently driven at a specific frequency ω. The intermittent driving of the voltage causes the heating element 4 to generate heat. The amount of heat generated by the heating element 4 fluctuates with the variation of the applied voltage. Thus, the fluctuation component of the heat generation of the heating element 4 which is changed is referred to as "the intersection component of heat generation". Further, in the heating element 4, a DC component which is a simple added component which does not contribute to the generation of heat generated by the pressure wave is generated depending on the heat capacity. Hereinafter, this is called "the DC component of fever". In the present embodiment, the thickness of the Pm thermal layer 3 is formed to be an alternating current component for heat generation and is the same as the thermal diffusion length determined by the thermal conductivity of the heat insulating layer 3 and the heat capacity per unit volume. As a result, the alternating current component of the heat generation is thermally insulated by the heat insulating member 3 on the side of the substrate 2, and the heat generating DC component can be efficiently diffused to the substrate 2 having high thermal conductivity. In the case where the material of the heat insulating layer 3 is nc_si, the thickness of the heat insulating layer 3 can be set, for example, to a degree of 5 gm to 2 Torr. The thickness of the heat insulating layer 3 can be appropriately changed depending on the frequency band of the sound waves generated. A heat sink 5 is provided on a surface (the other main surface) opposite to the surface on which the heat insulating layer 3 and the heat generating body 4 are formed on the substrate 2. The heat sink 5 is closely attached to the main surface. The hot film 5 is made of heat-conducting materials such as aluminum and copper. 126322.doc 200841940. In the heat sink 5, a plurality of fins 5f are formed. Thereby, the heat sink 5f increases the area in which the heat radiating sheet 5 is in contact with the air. The fins 5 expand the heat of the substrate 2 toward the air below the paper surface. As described above, by the heat insulating layer 3, the heat of the AC component on the substrate 2 is insulated by the heat insulating layer 3, but the DC component of the heat generated by the heat generating body 4 corresponding to the heat capacity of the heat generating body 4 is formed. It is transmitted to the substrate 2. Although the heat capacity of the substrate 2 is sufficiently larger than the heat capacity of the heat generating body 4 and the heat insulating layer 3, it is equivalent

有限,故基板2之溫度會因發熱體4所發生之發熱之直流成 分而上升。 在此,假設考慮在本實施型態之壓力波產生裝置丨中, :下散熱片5之情形。此情形’基板2之熱也會正常地以決 定於基板2與下側之空氣之溫度差之係數向空氣中擴散。 但’相較於散熱片5與下側之线接觸之表面積,基板2之 下=之面之表面積較小,故空氣與基板2之溫度差不充分 大時’向下側之空氣擴散之熱與發熱體4之發熱之直流成 分不能平衡,而不能充分地使該成分向空氣中散熱。 其次,考慮如圖!所示設置散熱片5之情形。此情形,此 情形’散熱片5與下側之线接觸之表面積變大,故可提 高熱擴散至空氣之效率。即縱使在空氣與散熱片5之溫度 拥低之狀L下,向下側之空氣擴散之熱與發熱體4之發 之直流成分可保持平衡。其結果,可抑低基板2之溫 -。又,在基板2設置散熱片5相當於基板2之熱容量增大 =熱片5之熱容量,故該熱容量之增大部分可相對地抑 制基板2之溫度之上升。 126322.doc 200841940 5之熱傳導率,也可在基板2 如此,可使散熱膏滲入基板2 所形成之間隙,可在基板2與 故可進一步抑制基板2之溫度 又’為提南基板2對散熱片 與散熱片5之間填充散熱膏。 與散熱片5之固體彼此之接觸 散熱片5之間有效地傳達熱, 之上升。Since the temperature of the substrate 2 is limited, the temperature of the substrate 2 rises due to the DC component of the heat generated by the heating element 4. Here, it is assumed that in the pressure wave generating device of the present embodiment, the lower heat sink 5 is used. In this case, the heat of the substrate 2 is also normally diffused into the air by a coefficient determined by the temperature difference between the substrate 2 and the air on the lower side. However, 'the surface area of the surface below the substrate 2 is smaller than the surface area of the lower surface of the heat sink 5 and the lower side, so the temperature difference between the air and the substrate 2 is not sufficiently large. The DC component of the heat generated by the heating element 4 cannot be balanced, and the component cannot be sufficiently radiated to the air. Second, consider the picture! The case where the heat sink 5 is set is shown. In this case, in this case, the surface area of the heat sink 5 in contact with the line on the lower side becomes large, so that the efficiency of heat diffusion to the air can be improved. That is, even in the case where the temperature of the air and the fins 5 is low, the heat of the air diffused to the lower side and the DC component of the heat generating body 4 can be balanced. As a result, the temperature of the substrate 2 can be suppressed. Further, the provision of the heat sink 5 on the substrate 2 corresponds to an increase in the heat capacity of the substrate 2 = the heat capacity of the heat sheet 5, so that the increase in the heat capacity can relatively suppress the rise in the temperature of the substrate 2. 126322.doc 200841940 5 thermal conductivity, can also be in the substrate 2, so that the thermal grease can penetrate into the gap formed by the substrate 2, can be used in the substrate 2 and thus can further inhibit the temperature of the substrate 2 A heat dissipating paste is filled between the sheet and the heat sink 5. The solids in contact with the fins 5 are in contact with each other. The fins 5 effectively communicate heat and rise.

又也可強制冷部散熱片5。例如,可利用作為冷卻機 構之冷卻扇(例如參照圖5)將空氣喷在散熱片5f。如此,與 自然對流之情形相比,謂低與散熱# 5f接觸之空氣之溫 度’故可增加由散熱片5f擴散之熱量。又’作為使用於= 制冷卻之冷卻機構,也可使用通以冷卻水而冷卻之水冷方 式之熱交換器、及派耳帖元件等。 在圖2⑷、圖2(b)中,表示散熱片5等散熱機構等之效果 之說明圖。在圖2(a)、圖2(b)所示之曲線圖中,橫軸為時 間,縱轴為發熱體4之表面之空氣密度。因此,在圖2(a)、 圖2(b)中,表示發熱體4之表面之空氣密度之時間變化。 圖2(a)係表示由本實施型態之壓力波產生裝置丨除去散熱 片5時之發熱體4表面之空氣密度之時間變化。又,圖2(b) 係表示本實施型態之壓力波產生裝置丨之發熱體4之表面之 空氣密度之時間變化。在圖2(a)之情形與圖2(b)之情形 中,施加至發熱體4之電壓相同,雙方之空氣密度均依照 其電壓之變動週期而變化。在此,無論圖2(a)之情形或圖 2(b)之情形,發熱體4之表面之空氣都會因藉驅動電路6間 歇地流至發熱體4之脈衝電壓或交流電壓而在電流流至發 熱體4時被加熱而膨脹(變疏),在流至發熱體4之電流為0或 126322.doc -10- 200841940 較小時溫度降低而收縮(變密)。 但,如圖2⑷所示,無散熱片5之情形,基板以熱不能 有效地被擴散至外部,故基板2之溫度上升,發熱之直流 成分產生之熱難以由發熱體4傳導至基板2。因此,發熱體 4之溫度-直維持較高狀態’流至發熱體4之電流/ο;, 發熱體4之表面之空氣,不能充分地收縮。在圖2(a)中,以 週期振動曲線之下側之包絡線表示此態樣。如此包絡線所 示,振動之下限B會逐漸升高,振動之下限B升高時,振 動之有效的振幅A會變小,故音壓會降低。 對此,如圖2⑻所示,備置有散熱片5之情形,基板2之 熱能有效地被擴散至外部,故基板2之溫度上升變小,發 熱之直流成分產生之熱可有效地由發熱體4傳導至基板2。 因此,流至發熱體4之電流為〇時,發熱體4之表面之空氣 旎夠充分地收縮。在圖2(b)中,以週期振動曲線之下側之 包絡線表示此態樣。如此包絡線所示,振動之下限B幾乎 不會上升,振動之有效的振幅A幾乎可保持初始之值,故 可保持音壓。 如以上所詳細說明,在本實施型'態之壓力波產生裝置】 中,由於可抑制發熱體4之熱之直流成分引起之基板2之溫 度上升,故可防止所產生之音波之音壓之降低。又,可保 持車乂低之發熱體4之平均溫度,故發熱體4之電阻值不會變 大’可在寬闊區域中增大同一電力所能獲得之音壓。另 外,發熱體4、隔熱層3及基板2之熱應力變形變小,故可 提高麼力波產生裝置1之耐久性。 126322.doc 200841940 (實施例) 其次,一面參照圖3至圖9,一面更詳細地說明有關本發 明之壓力波產生裝置1之更具體之實施例。以下,一面適 宜地比較上述實施型態之壓力波產生裝置1與由壓力波產 生裝置1除去散熱片5之裝置,即以往之壓力波產生裝置,It is also possible to strongly cool the heat sink 5 . For example, air can be sprayed on the heat sink 5f by a cooling fan (for example, see Fig. 5) as a cooling mechanism. Thus, compared with the case of natural convection, the temperature of the air which is in contact with the heat sink 5 5f can increase the amount of heat diffused by the fins 5f. Further, as the cooling mechanism used for the cooling system, a water-cooling type heat exchanger that is cooled by cooling water, and a Peltier element can be used. Figs. 2(4) and 2(b) are explanatory views showing the effects of a heat radiating mechanism such as the heat sink 5. In the graphs shown in Figs. 2(a) and 2(b), the horizontal axis represents time and the vertical axis represents the air density of the surface of the heat generating body 4. Therefore, in Figs. 2(a) and 2(b), the temporal change in the air density of the surface of the heating element 4 is shown. Fig. 2 (a) shows the temporal change in the air density of the surface of the heat generating body 4 when the heat radiation fin 5 is removed by the pressure wave generating device of the present embodiment. Further, Fig. 2(b) shows a temporal change in the air density on the surface of the heat generating body 4 of the pressure wave generating device of the present embodiment. In the case of Fig. 2(a) and Fig. 2(b), the voltage applied to the heating element 4 is the same, and the air density of both sides changes in accordance with the fluctuation period of the voltage. Here, regardless of the case of FIG. 2(a) or the case of FIG. 2(b), the air on the surface of the heating element 4 flows in the current due to the intermittent voltage flowing to the heating element 4 by the driving circuit 6 or the alternating current voltage. When it is heated to the heating element 4, it is heated and expanded (sparse), and when the current flowing to the heating element 4 is 0 or 126322.doc -10- 200841940, the temperature is lowered and contracted (densified). However, as shown in Fig. 2 (4), in the case where the heat sink 5 is not provided, the substrate is not efficiently diffused to the outside by heat, so that the temperature of the substrate 2 rises, and heat generated by the DC component of heat generation is hardly transmitted from the heat generating body 4 to the substrate 2. Therefore, the temperature of the heating element 4 - directly maintaining the current flowing to the heating element 4 / /; the air on the surface of the heating element 4 cannot be sufficiently shrunk. In Fig. 2(a), this aspect is indicated by the envelope on the lower side of the periodic vibration curve. As shown by the envelope, the lower limit B of the vibration gradually increases, and when the lower limit B of the vibration increases, the effective amplitude A of the vibration becomes smaller, so that the sound pressure is lowered. On the other hand, as shown in Fig. 2 (8), when the heat sink 5 is provided, the heat of the substrate 2 is effectively diffused to the outside, so that the temperature rise of the substrate 2 becomes small, and the heat generated by the DC component of the heat can be efficiently generated by the heat generating body. 4 is conducted to the substrate 2. Therefore, when the current flowing to the heating element 4 is 〇, the air on the surface of the heating element 4 is sufficiently shrunk. In Fig. 2(b), this is indicated by the envelope on the lower side of the periodic vibration curve. As shown by the envelope, the lower limit B of the vibration hardly rises, and the effective amplitude A of the vibration can be kept at the initial value, so that the sound pressure can be maintained. As described in detail above, in the pressure wave generating device of the present embodiment, since the temperature of the substrate 2 caused by the direct current component of the heat of the heating element 4 can be suppressed, the sound pressure of the generated sound wave can be prevented. reduce. Further, since the average temperature of the heating element 4 having a low rut can be maintained, the resistance value of the heating element 4 does not become large, and the sound pressure which can be obtained by the same electric power can be increased in a wide area. Further, since the thermal stress deformation of the heating element 4, the heat insulating layer 3, and the substrate 2 is small, the durability of the force wave generating device 1 can be improved. 126322.doc 200841940 (Embodiment) Next, a more specific embodiment of the pressure wave generating device 1 of the present invention will be described in more detail with reference to Figs. 3 to 9 . Hereinafter, the pressure wave generating device 1 of the above-described embodiment and the device for removing the heat sink 5 by the pressure wave generating device 1 are conventionally compared, that is, the conventional pressure wave generating device.

一面進行說明。在圖3中,表示本發明之第1實施型態之壓 力波產生裝置1。又,在圖4中’表示以往之壓力波產生裝 置(除去散熱片5之狀態之壓力波產生裝置丨)。另外,在圖$ 中,表示本發明之第2實施型態之壓力波產生裝置丨。如圖 5所不壓力波產生裝置1除了圖1所示之壓力波產生裝置 之構成以外,進一步包含冷卻扇1〇。冷卻扇1〇用於強制氣 冷散熱片5。又,在圖5中,以箭號表示冷卻扇1〇產生之空 氣μ。又,貝際上,冷卻扇! 〇雖配置成使空氣沿著散熱片 5(紙面正交方向)流動,但在圖5中,為防止圖式之錯縱複 雜,以使空氣沿著與散熱片5正交之方向流動之方式加以 顯示。又,在圖3至圖5中,係以壓力波產生裝置〗被安置 於評估其特性之系、統(後述之評估系統)之狀態加以顯示。 在圖3至圖5之任一壓力波產生裝置1,均使用基板 電阻為5Ω · cm之ρ型Si晶圓作為基板2,nc_si之隔熱層3之 厚度為100 μηι,在隔熱層3上以金(Au)形成發熱體4之壓力 波產生裝置。隔熱層3之厚度_ Mm相當於輸出之音波之 頻率為1服之情形之熱擴散長,壓力波產生裝置i可以! kHz以上之頻率產生音、、由 曰波。而,均屬於可將間歇之脈衝電 壓施加至發熱體4,使其產生音波之裝置。 126322.doc -12- 200841940 之上所逑之壓力波產生裝置i,例如採用如下 先,準備石夕晶圓之基板2,在其背面,以直* 蒸鍍等形成例如由銘薄膜形成之電極層。而,氣: (HF)與乙醇之混合溶液,在以麵㈣為對向電極而二^ 熱層3之部分施以陽極氧化處理。、夜 ^ ^ ^ : ’夜之成分比、電流 =度及處理時間控制於特定值,以形成被多孔質化 厚度與粒度之nc-Si之隔熱層3。 王 在本實施例中,在基板2之形 ^ , m,、、、層3之面形成絕緣體 層(未圖不)。在基板2上,例如藉電漿cvd 玻璃(NSG)等而形成絕緣俨厗 、…谷雜矽酸 〜凤、、巴緣體層。在本實施例中 層之厚度設定為200 nm。絕緣體 、、,· 為遍1 、 嘴+身不發熱,具有使發 …、體4之溫度分佈保持均勾 ^ a ^ 您作用與隔熱層3相比,絕緣 體層之厚度極薄’故不影響基板2之厚度方向之孰;: 長。可藉此絕緣層,缓和發敎门之熱擴政 …、般4之溫度之不均引 部的應力’並可增大施加至發熱體4之: 果’可增大音M,並提高壓力波產生農41之耐久性。— 其次,將圖案化成發熱體4 體声上,益、 〈办狀之型板罩保持於絕緣 P二 U)之濺射,以特定圖案將發熱體4形成於 “熱層3之絕緣體層上。苴後, ^ 〃 在&熱體4形成連接驅動電 電極等。而,在基板2之背面塗佈^ ^ # 熱片5。 月卸坌佈政熱I而安裝散 二;欠說明有„仙 ."Ί乎估壓力波產生裝置1之特性之系統(評估 糸、,充)。此評估系統係包含麥克風7'指“㈣心卜 126322.doc 200841940 及遮蔽蓋9。藉指數曲線型喇σΛ 8將壓力波產生裝置1產生 之曰波’向其輸出部集中。評估系統雖被遮蔽蓋9之壁9Η 所覆盖’但在遮蔽蓋9,於指數曲線型喇。八8之輸出附近之 壁9W之部分形成孔9Η。因此,被集中之音波會向孔911被 輸出。麥克風7設於孔9H之上方。由形成於遮蔽蓋9之壁 9 W之孔9Η被輸出之音波被麥克風7所檢測,並被測定被麥 克風7所檢測之音波之音壓。 圖6係表示產生音壓之經過時間與音壓之變化之關係之 曲線圖。由此曲線圖,可明瞭音壓變動之散熱片有無之依 存性。橫軸表示經過時間(sec),以對數刻度顯示。又,縱 轴表示音壓(dB)。在圖6中,三角符號表示圖4之無散熱片 之情形之音壓變動。又,四角符號表示圖3之有散熱片之 2形之音壓變動。再者,圓形符號表示圖5之強制空冷之 情形之音壓變動。在此,假設施加之脈衝電壓之頻率為^ kHz,電力在任何一種情形均相同。 • 如圖6所示,無散熱片5之以往之情形,音壓每丨分降低4 dB。對此,有散熱片5之情形,即使經過⑺㈧秒,音壓之 • 卜低也止於1 dB以下。另外,在強制空冷之情形,即使經 過1小時以上,音壓之降低也在〇.5犯以下。由以上之結 ' 果,可知:音壓之降低可藉散熱片5抑制在極低之值。 /圖7係表示產生音壓之經過時間與冷卻扇1〇之變化之關 :、之曲線圖。由此曲線圖,可明瞭發熱體4之電阻變動之 散熱片有無之依存性。在此曲線圖中,橫轴表示經過時間 (咖)’以對數刻度顯示 '又,縱軸表示發熱體4之電阻 126322.doc -14- 200841940 (Ω)\另外’在此曲線圖中,連結三角符號之實線表示圖4 之無政熱片之情形之發熱體4之電阻變動。又,連結四角 符號之實線表示圖3之有散熱片之情形之發熱體4之電阻變 動。再者,連結圓形符號之實線表示圖5之強制空冷之情 形之發熱體4之電阻變動。在此,假設施加之脈衝電壓之 頻率為1 kHz,電力在任何_種情形均相同。又,在產生 音波之開始時點,發熱體4之電阻(初始值)表示同值。 如圖7所不,無散熱片5之以往之情形,電阻值每1分增 大約2成。對此’有散熱片5之情形,即使經過咖秒,; 阻值之增大也止於5%以下。另外,在強制空冷之情形包 即使經則小時以上,電阻值之增大也幾乎不顯現。由以 上之結果,可知:電阻值之增大可藉散熱片5抑制在極小 之值。 圖8係表示產生音壓之經過時間與基板&溫度之變化之 關係之曲線圖。由此曲線圖,可明瞭基板2之溫度之散敎 片有無之依存性。纟此曲線圖中,橫軸表示經過時間 ㈣’以對數刻度顯示。X,縱軸表示基板2之溫度。在 在此曲線圖中,三角符號表示圖4之無散熱片之情形之基 板2之溫度。又,四角符號表示圖3之有散熱片之情形之其 板2之溫度。再者,圓形符號表示圖5之強制空冷之情形: 基板2之溫度。在此,假設施加之脈衝電壓之頻率為丨 kHz,電力在任何一種情形均相同。 如圖8所示,無散熱片5之以往之情形,基板2之溫度… 分上升50C:以上。對此,有散熱片5之情形,即使經過 126322.doc -15- 200841940 1000心’基板2之溫度也止於 冷之情形,即使經過!小時以上,=另外’在強制空 下。由以上之結果,可知·在古,板2之溫度也在代以 冷之情形,可抑制基板2之、、二熱片之情形及在強制空 值之變動也變小。1 〜之上升’且發熱體4之電阻 在圖9中,表示藉有散熱 體4之電塵之頻率變化 ::,、,、片而使施加至發熱 以比較各其音壓之曲線圖。由此 曲線圖,可明瞭音壓之 放"、、片有無之依存性。在此曲線圖 中,棱軸表示音波之頻率㈣。又,縱軸表示音壓㈣。 在圖巾豸、、。_角符5虎之細實線表示圖4之無散熱片之情 形之曰C又’連結四角符號之粗實線表示圖3之有散埶 片之情形之音壓。在此’假設頻率之測定範圍為i kHz, kHz,輸入電力在任何一方均相同而一定。 如圖9所示’與無散熱片之情形相比,有散熱片之情 形,在測定之頻率之i kHz〜1〇 kHz之全頻帶中,音壓會增 大。音壓之差最大約為1G dB (3 kHz)。反言之,為獲得相 同音壓,有散熱片之情形,只要較小之輸入電力即可。輸 入電壓變小時,可提高壓力波產生裝置丨之耐久性。 如上所述,依據本發明之實施型態之壓力波產生裝置 1 ’可使產生之音壓之下降變小,並可使音壓保持穩定。 又’可在廣闊之區域中增大同一電力所得之音壓。而,提 高壓力波產生裝置1之耐久性。 又,在上述實施型態中所說明之壓力波產生裝置1之構 成僅係一例,可任意變更及修正。例如,發熱體4並不限 126322.doc -16 - 200841940 定於圖1所示之發熱體,可設計成各種形狀、型式、大 小。例如,也可在同一基板設置複數發熱體4。又,在上 述實施型態中,壓力波產生裝置1所產生之壓力波為「音 波」’但本發明當然也可適用於產生「超音波」作為壓力 波之裝置。 如上所述,依據本發明之壓力波產生裝置及其散熱方 法,由於具備有接觸而設置於基板之他方主面(未形成導 體層之主面),使該基板之熱擴散至基板之外,故可抑制 整個糸統之溫度上升。此結果,可防止產生之壓力波(音 波)之音壓之降低,可穩定地保持音壓,且可提高耐久 性。 [產業上之可利用性] 本發明之壓力波產生裝置及其散熱方法可有用於產生音 波及超音波等之空氣之疏密波(壓力波)。 【圖式簡單說明】 圖1(a)係表示本發明之一實施型態之壓力波產生裝置之 平面圖,圖1(b)係表示圖l(a)之χ-χ剖面圖。 圖2(a)係表示由壓力波產生裝置除去散熱片時之發熱體 表面之空氣密度之時間變化之曲線圖。圖2(b)係表示圖 10)之壓力波產生裝置之發熱體4之表面之空氣密度之時間 變化之曲線圖。 圖3係表示本發明之第1實施型態之壓力波產生裝置之構 成之圖。 圖4係表示以往之壓力波產生裝置之構成之圖。 126322.doc •17· 200841940 圖5係表示本發明之第2實施型態之壓力波產生裝置之構 成之圖。 圖6係表示音壓變動之散熱片有無之依存性之曲線圖。 圖7係表示電阻變動之散熱片有無之依存性之曲線圖。 圖8係表示溫度變動之散熱片有無之依存性之曲線圖。 圖9係表不音壓之散熱片有無之依存性之曲線圖。 • 【主要元件符號說明】 1 壓力波產生裝置 2 基板 3 隔熱層 4 發熱體(導體層) 5 散熱片(散熱機構) 6 驅動電路 10 冷部屬(強制冷卻機 126322.doc '18.Explain on one side. Fig. 3 shows a pressure wave generating device 1 according to a first embodiment of the present invention. Further, in Fig. 4, 'the conventional pressure wave generating device (pressure wave generating device 状态 in a state where the heat sink 5 is removed) is shown. Further, in Fig. $, a pressure wave generating device according to a second embodiment of the present invention is shown. The pressure wave generating device 1 as shown in Fig. 5 further includes a cooling fan 1 in addition to the configuration of the pressure wave generating device shown in Fig. 1. The cooling fan 1〇 is used to force the air-cooling fins 5. Further, in Fig. 5, the air μ generated by the cooling fan 1 is indicated by an arrow. Also, on the Beck, the cooling fan! Although it is arranged such that air flows along the fins 5 (the direction perpendicular to the plane of the paper), in FIG. 5, in order to prevent the erroneous pattern of the pattern from being complicated, the air flows in a direction orthogonal to the fins 5 Show it. Further, in Figs. 3 to 5, the state in which the pressure wave generating means is placed in the system for evaluating the characteristics (the evaluation system described later) is displayed. In any of the pressure wave generating devices 1 of FIGS. 3 to 5, a p-type Si wafer having a substrate resistance of 5 Ω·cm is used as the substrate 2, and the insulating layer 3 of the nc_si has a thickness of 100 μm, in the heat insulating layer 3. A pressure wave generating device that forms the heating element 4 with gold (Au). The thickness of the heat insulating layer 3 _ Mm is equivalent to the frequency of the output sound wave is 1 heat, and the pressure wave generating device i can be! The frequency above kHz produces a sound and is chopped. Further, it belongs to a device which can apply intermittent pulse voltage to the heating element 4 to generate sound waves. 126322.doc -12- 200841940 The above-mentioned pressure wave generating device i is prepared by, for example, preparing a substrate 2 of a stone wafer, and forming an electrode formed of, for example, a film on the back surface by direct vapor deposition or the like. Floor. Further, the gas: a mixed solution of (HF) and ethanol is subjected to anodizing treatment in a portion where the surface (4) is the counter electrode and the thermal layer 3 is used. The night ^ ^ ^ : ' night composition ratio, current = degree, and processing time are controlled to specific values to form the insulating layer 3 of the nc-Si having a porous thickness and particle size. In the present embodiment, an insulator layer (not shown) is formed on the surface of the substrate 2 in the form of ^, m, , and . On the substrate 2, for example, an insulating ruthenium, a glutamic acid, a phoenix, and a bait layer are formed by a plasma cvd glass (NSG) or the like. In the present embodiment, the thickness of the layer was set to 200 nm. Insulators, , , · For the pass 1 , mouth + body does not heat, have the temperature distribution of the hair ..., body 4 are kept ^ a ^ ^ Compared with the heat insulation layer 3, the thickness of the insulator layer is extremely thin, so Affects the thickness direction of the substrate 2; The insulating layer can be used to alleviate the thermal expansion of the hair door...the stress of the uneven temperature of the temperature 4 can be increased and applied to the heating element 4: If the sound M can be increased and the pressure is increased The wave produces the durability of the farm 41. - Secondly, the pattern is formed into the body of the heating element 4, and the sputtering of the slab is held in the insulating P 2 U. The heating element 4 is formed on the insulator layer of the thermal layer 3 in a specific pattern. After that, ^ 形成 is formed in the & thermal body 4 to form a connection driving electrode, etc., and the surface of the substrate 2 is coated with ^ ^ #热片 5. The month of the 坌 坌 坌 热 热 热 而 安装 安装 安装 安装 ; ; ; ; „仙." A system that evaluates the characteristics of the pressure wave generating device 1 (evaluation, charge). This evaluation system includes a microphone 7' which means "(4) heart 126322.doc 200841940 and a shadow cover 9. The chopping wave generated by the pressure wave generating device 1 is concentrated by the exponential curve type λ Λ 8 to the output portion thereof. The wall 9' of the shadow cover 9 is covered by 'but the hole 9' is formed in the portion of the wall 9W near the output of the exponential curve type. The output sound is output to the hole 911. The microphone 7 is output. It is disposed above the hole 9H. The sound wave outputted from the hole 9 形成 formed in the wall 9 W of the shielding cover 9 is detected by the microphone 7 and is measured by the sound pressure of the sound wave detected by the microphone 7. Fig. 6 shows the sound generation The graph of the relationship between the elapsed time of pressure and the change of sound pressure. From this graph, the dependence of the heat sink with the change of sound pressure can be understood. The horizontal axis indicates the elapsed time (sec) and is displayed on a logarithmic scale. The axis represents the sound pressure (dB). In Fig. 6, the triangular symbol indicates the sound pressure variation in the case of the heat sink without the heat sink of Fig. 4. In addition, the four-corner symbol indicates the sound pressure variation of the shape of the heat sink of Fig. 3. , the circular symbol indicates the forced air cooling of Figure 5. Here, it is assumed that the frequency of the applied pulse voltage is ^ kHz, and the power is the same in any case. • As shown in Fig. 6, in the conventional case without the heat sink 5, the sound pressure is reduced every minute. 4 dB. In the case of the heat sink 5, even after (7) (eight) seconds, the sound pressure is less than 1 dB. In addition, in the case of forced air cooling, even after one hour or more, the sound pressure is lowered. The following is the result of 〇.5. From the above results, it can be seen that the reduction of sound pressure can be suppressed to a very low value by the heat sink 5. / Figure 7 shows the elapsed time of generating sound pressure and the change of the cooling fan The curve of the curve: The graph shows the dependence of the heat sink of the heating element 4 on the heat sink. In this graph, the horizontal axis indicates the elapsed time (coffee) 'displayed on a logarithmic scale' The vertical axis represents the resistance of the heating element 4 126322.doc -14- 200841940 (Ω)\ In addition, in this graph, the solid line connecting the triangular symbols indicates the resistance of the heating element 4 in the case of the heatless heat sheet of Fig. 4. Change. Also, the solid line connecting the four-corner symbol indicates that there is a heat sink in Figure 3. In the case where the resistance of the heating element 4 is changed, the solid line connecting the circular symbols indicates the resistance variation of the heating element 4 in the case of forced air cooling in Fig. 5. Here, it is assumed that the applied pulse voltage has a frequency of 1 kHz, and the electric power is applied. In any case, the same is true. Also, at the point of the start of the sound wave, the resistance (initial value) of the heating element 4 represents the same value. As shown in Fig. 7, there is no heat sink 5 in the past, the resistance value is 1 point. The increase is about 20%. In the case of the heat sink 5, even after the coffee seconds, the increase of the resistance value is less than 5%. In addition, in the case of forced air cooling, even if the package is over the hour, the resistance value is The increase is hardly apparent. From the above results, it is understood that the increase in the resistance value can be suppressed to a minimum by the heat sink 5. Fig. 8 is a graph showing the relationship between the elapsed time at which the sound pressure is generated and the change in the substrate & temperature. From this graph, the dependence of the temperature of the substrate 2 on the presence or absence of the sheet can be clarified. In this graph, the horizontal axis indicates that the elapsed time (four)' is displayed on a logarithmic scale. X, the vertical axis represents the temperature of the substrate 2. In this graph, the triangular symbol indicates the temperature of the substrate 2 in the case of Fig. 4 without the heat sink. Further, the four-cornered symbol indicates the temperature of the panel 2 in the case of the heat sink of Fig. 3. Further, the circular symbol indicates the case of forced air cooling of Fig. 5: temperature of the substrate 2. Here, it is assumed that the applied pulse voltage has a frequency of 丨 kHz, and the power is the same in either case. As shown in Fig. 8, in the conventional case without the heat sink 5, the temperature of the substrate 2 is increased by 50 C: or more. In this case, in the case of the heat sink 5, even if the temperature of the substrate 2 through the 126322.doc -15-200841940 1000 is stopped, even if it passes for more than ! hours, it is otherwise forced to empty. From the above results, it can be seen that in the case where the temperature of the plate 2 is also cold, it is possible to suppress the situation of the substrate 2, the two hot sheets, and the variation in the forced null value. The resistance of the heating element 4 and the electric resistance of the heating element 4 are shown in Fig. 9 as a graph in which the frequency of the electric dust of the heat radiating body 4 is changed to ::,, and the sheet is applied to heat to compare the sound pressures. From this graph, it is possible to understand the dependence of the sound pressure on the "," and the presence or absence of the film. In this graph, the axis represents the frequency of the sound wave (4). Further, the vertical axis represents the sound pressure (four). In the figure, 豸,,. _ 角角5 The thin solid line of the tiger indicates that there is no heat sink in Figure 4. The shape of the 又C and the thick solid line connecting the four-corner symbol indicates the sound pressure of the situation in Figure 3. Here, the measurement range of the assumed frequency is i kHz, kHz, and the input power is constant on either side. As shown in Fig. 9, compared with the case where there is no heat sink, there is a heat sink, and the sound pressure is increased in the entire frequency band of the measured frequency of i kHz to 1 kHz. The difference in sound pressure is up to approximately 1G dB (3 kHz). Conversely, in order to obtain the same sound pressure, there is a heat sink, as long as the input power is small. When the input voltage becomes small, the durability of the pressure wave generating device can be improved. As described above, the pressure wave generating device 1' according to the embodiment of the present invention can make the drop of the generated sound pressure small and keep the sound pressure stable. In addition, the sound pressure from the same electric power can be increased in a wide area. However, the durability of the pressure wave generating device 1 is improved. Further, the configuration of the pressure wave generating device 1 described in the above embodiment can be arbitrarily changed and corrected as an example. For example, the heating element 4 is not limited to 126322.doc -16 - 200841940. The heating element shown in Fig. 1 can be designed in various shapes, types, and sizes. For example, a plurality of heating elements 4 may be provided on the same substrate. Further, in the above-described embodiment, the pressure wave generated by the pressure wave generating device 1 is "sound wave". However, the present invention is of course applicable to a device that generates "ultrasonic wave" as a pressure wave. As described above, the pressure wave generating device and the heat dissipating method thereof according to the present invention are provided on the other main surface of the substrate (the main surface of the conductor layer is not formed) by the contact, and the heat of the substrate is diffused outside the substrate. Therefore, the temperature rise of the entire system can be suppressed. As a result, the pressure of the generated pressure wave (sound wave) can be prevented from being lowered, the sound pressure can be stably maintained, and the durability can be improved. [Industrial Applicability] The pressure wave generating device and the heat radiating method thereof according to the present invention may have a dense wave (pressure wave) for generating air such as sound waves and ultrasonic waves. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1(a) is a plan view showing a pressure wave generating device according to an embodiment of the present invention, and Fig. 1(b) is a cross-sectional view taken along line χ-χ of Fig. 1(a). Fig. 2 (a) is a graph showing temporal changes in the air density of the surface of the heat generating body when the heat sink is removed by the pressure wave generating means. Fig. 2(b) is a graph showing temporal changes in the air density of the surface of the heat generating body 4 of the pressure wave generating device of Fig. 10). Fig. 3 is a view showing the configuration of a pressure wave generating device according to a first embodiment of the present invention. Fig. 4 is a view showing the configuration of a conventional pressure wave generating device. 126322.doc • 17· 200841940 Fig. 5 is a view showing the configuration of a pressure wave generating device according to a second embodiment of the present invention. Fig. 6 is a graph showing the dependence of the presence or absence of the heat sink on the sound pressure fluctuation. Fig. 7 is a graph showing the dependence of the presence or absence of a heat sink in which the resistance changes. Fig. 8 is a graph showing the dependence of the presence or absence of a heat sink on temperature fluctuations. Fig. 9 is a graph showing the dependence of the heat sink on the sound pressure. • [Main component symbol description] 1 Pressure wave generating device 2 Substrate 3 Insulation layer 4 Heating element (conductor layer) 5 Heat sink (heat dissipation mechanism) 6 Drive circuit 10 Cold part (forced cooler 126322.doc '18.

Claims (1)

200841940 十、申請專利範圍: 1· 一種壓力波產生裝置,其特徵在於包含: 熱傳導性之基板(2); 隔熱層(3),其係形成於該基板之一方主面; 導體層(4)其係形成於該隔熱層上,藉使含交流成分 之電流流通而發熱;及 =熱機構(5),其係接觸設置於前述基板之他方主面, 使前述基板之熱擴散至前述基板之外。 士 π求項1之壓力波產生裝置,其中前述散熱機構⑺係 散熱片。 3. 如請求们之壓力波產生裝置,其中進—步包含強制冷 部爾述散熱機構(5)之冷卻機構(1〇)。 4. 如請求項3之壓力波產生裝置,其中前述冷卻機構⑽係 冷卻扇、水冷方式之熱交換器、及派耳帖元件之至少 一方。 5. 如請求項1之壓力波產决护 ^ , w 1 收座生衣置,其中珂述隔熱層(3)係奈 米結晶石夕。 口月求項1之壓力波產生裝置,其中前述導體層⑷係含 有金或鎢所形成。 ”月求項1之壓力波產生裝置’其中在前述基板與前述 散熱機構之間填充有散熱膏。 二求項1之壓力波產生裝置,其中前述隔熱層⑺之厚 度係形成對於壓力波之頻率且與以冑述隔熱層之熱傳導 率及每單位體積之熱容量所決定之熱擴散長大致相同之 126322.doc 200841940 厚度。 9· 一種壓力波產生裝置 產生裝置係包含: 之散熱方法 其特徵在於該壓力波 熱傳導性之基板(2); 隔熱層(3),其係形成於該基板之一方主面;及 導體層(4),其係形成於該隔熱層±,藉使含交流成分 之電流流通而發熱;其散熱方法係200841940 X. Patent application scope: 1. A pressure wave generating device, comprising: a thermally conductive substrate (2); a heat insulating layer (3) formed on one of the main faces of the substrate; and a conductor layer (4) Is formed on the heat insulating layer, generates heat by circulating an electric current containing an alternating current component; and = a thermal mechanism (5) contacting the other main surface of the substrate to diffuse heat of the substrate to the foregoing Outside the substrate. The pressure wave generating device of claim 1, wherein the heat dissipating mechanism (7) is a heat sink. 3. The pressure wave generating device of the requester, wherein the step further comprises a cooling mechanism (1〇) of the cooling unit (5) of the strong cooling unit. 4. The pressure wave generating device according to claim 3, wherein the cooling mechanism (10) is at least one of a cooling fan, a water-cooling type heat exchanger, and a Peltier element. 5. As requested in item 1 of the pressure wave production ^, w 1 is placed in the raw clothes, in which the insulation layer (3) is the crystal crystallization stone. A pressure wave generating device according to Item 1, wherein the conductor layer (4) is formed of gold or tungsten. A pressure wave generating device of the first aspect of the invention, wherein a heat dissipating paste is filled between the substrate and the heat dissipating mechanism. The pressure wave generating device of claim 1, wherein the thickness of the heat insulating layer (7) is formed for a pressure wave. The frequency is substantially the same as the thermal diffusion length determined by arranging the thermal conductivity of the thermal insulation layer and the thermal capacity per unit volume. 126322.doc 200841940 Thickness. 9. A pressure wave generating device generating device comprising: a heat dissipating method In the pressure wave thermal conductivity substrate (2); the heat insulation layer (3) formed on one of the main surfaces of the substrate; and the conductor layer (4) formed on the heat insulation layer ±, including The current of the AC component circulates and heats up; 接觸前述基板之他方主面而設置散熱機構(5),藉前述 散熱機構(5)使前述基板之熱擴散至前述基板之外。The heat dissipating mechanism (5) is disposed in contact with the other main surface of the substrate, and the heat of the substrate is diffused outside the substrate by the heat dissipating mechanism (5). 126322.doc 2-126322.doc 2-
TW96150020A 2006-12-28 2007-12-25 Pressure wave generator and heat dissipation method thereof TW200841940A (en)

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JP2002134975A (en) * 2000-10-23 2002-05-10 Nippon Keiki Works Ltd Cooling fan
JP3865736B2 (en) * 2004-03-17 2007-01-10 農工大ティー・エル・オー株式会社 Ultrasonic sound source and ultrasonic sensor
JP2006307030A (en) * 2005-04-28 2006-11-09 Fujikura Rubber Ltd Heat-radiating greasy composition

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Publication number Priority date Publication date Assignee Title
TWI569694B (en) * 2011-11-15 2017-02-01 漢高智慧財產控股公司 Electronic devices assembled with thermally insulating layers
US10481653B2 (en) 2013-12-19 2019-11-19 Henkel IP & Holding GmbH Compositions having a matrix and encapsulated phase change materials dispersed therein, and electronic devices assembled therewith
US11155065B2 (en) 2013-12-19 2021-10-26 Henkel IP & Holding GmbH Compositions having a matrix and encapsulated phase change materials dispersed therein, and electronic devices assembled therewith

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