200837877 uivi^u-au06-0271 21932tw£doc/n 九、發明說明： 【發明所屬之技術領域】 本發明是錢於-種半導體製程，且_是有關於一種複 合開口的形成方法及應用此方法之雙重金屬鑲嵌製程。 【先前技術】 =著半導體猶積集度的提升，多重金_連_使用愈 ，恩廣f。通常’多重金屬内連線的金屬層的阻值愈低，則元 •=可#度愈高，元件的效能愈好。在金屬簡中，銅金屬的 非常是適合用作多重金屬内連線，但，由於銅金屬難 影細技術來贿化，因而發展出—種稱之為雙重 至屬鎮敗製程。 1金屬鑲絲程是-種在介電層中形成溝渠與介層窗 填金屬，以形成金屬導線與介層窗的技術。雙重金 門^肷=㈣方法有許多種’有的是在介電射先形成 開口，再形成溝渠；有的則是先形成溝渠，再形成介層窗。 # #制=形卢成介層窗開口再形成溝渠方法來進行雙重金屬鑲 的ί ϋ可的蝴過程巾’介層窗開口下方所對應 題Ui也會&受_的破壞，而造成元件電性上的問 102二^圖卜為了避免介層窗開口下方所對應的金屬層 種方^f驗_財遭受侧的破壞，目前已知的— 芦如’疋在介電豸106中形成介層窗開口 no之後，先在介 戶11G中填人溝填層112，以避免介層窗開口 110下方 心的金屬層102遭受钕刻的破壞。然而’此方法常會因為 5 200837877 ^ινχν^χν-ζ.ν〇6-〇271 21932twf.doc/n 溝填層112的遮蔽效應(shadowing effect)，而在後續餞刻形成 溝渠120之後，在介層窗開口 ι1〇頂角110a處殘留柵攔(fence) 狀的介電層106a，造成元件可靠度的問題。然而，要消除栅 攔狀的介電層常面臨許多的困難。藉由調整溝填層的高度來避 免栅攔狀介電層的形成是一種可以採行的方法，但是由於钱刻 均勻度不佳以及微負載效應(1111(^〇1〇3(^1培6饱()|;)的影響，在基 底中心處的溝填層的厚度與基底邊緣處的溝填層的厚度，或是 检集區域的溝填層的厚度與基底疏鬆區域的溝填層的厚度常 有著極大的差異，使得製程的空間(processwindow)非常狹小。 、另一方面，請參照圖2，若是為了避免在蝕刻的過程中形 成栅攔狀的電層，而採用少聚合物之钱安】劑來進行溝渠的钱 刻製程，則溝渠120頂角120a處的介電層1〇6會因為沒有聚 合物的保護而遭钱刻劑的破壞，造成雜m頂肖丨施圓 =的現象。當後續沈積的金屬層122填人此頂賴化的溝渠之 ^ ’相鄰的兩個雙重金屬镶嵌結構，可能會因此而。 【發明内容】 本，明的目的就是在提供—種雙重金屬鑲嵌結構的製造 全免溝渠頂角圓化的現象，防止相鄰的兩個雙重 至屬鐽肷結構發生橋接的現象。 方丰本^的又—目的是提供—種雙重金屬鑲嵌結構的製造 ^可以避免形成栅攔狀的介電層。 以避再—目的是提供—種複合開σ的形成方法，其可 開口頂角圓化現象且可避免窄開口頂角形成栅攔狀 6 200837877 um^-zu06-0271 2I932twf.doc/n 本發明提出-種雙重金屬鑲嵌製程。此方 == 聰層’並在其中形成-介層窗開口，裸i 底上形成-阻抗層。之後，進行;;/冓真層亚在基 層中形成-溝渠，並使得留下:溝==程二在介電 蝴製辦，猜料進行 後，去除溝填層、阻抗層與介層窗開露層者。其 渠與介層窗開π巾形成—導電層。彳叙之襯層，再於溝 依知本發明實施例所述，上述 進行_製程時，溝填層/阻抗層製程中’在 依照本判實施例所述，至u。 依知本發明實施綱述，上述日^刻辜。 進行f製程時，溝填層/介電層之钱刻選中，在 依照本發明實施例所述，上述之雙 」:.2至2。 抗層之糊率大於介電層之綱率。、…製程中’阻 依照本發明實施例所述，上述 進行_製程時之餘刻氣體不含氧氣屬域製程中，在 依照本發明實施例所述，上述之雔 在進行钱刻製程時所使用的氣體包括氟U _歲製程中， 依照本發明實施例所述，上: 在進行蝕難程時用喊 ^ =额製程中， 依照本發时_所述， 進行餘刻製程時所使用的氣體還包括屬鎮歲製程中，在 5周整氣體。依照本發明 200837877 UMCD-2006-0271 21932twf.doc/n 叙雙重金麟絲財，介電狀材質包括 μ精施靖述’上述之雙重金屬鑲嵌製程更包括 在形成該"層窗開日之前’在介電層上形成頂蓋層。 ’上述之雙重金屬镶巍製程中，溝 填材料包括無抗反射特性之聚合物。 料声本—觀合開啸彡成方法。在基底上形成—材 射形成—窄開口，接著，在窄開口中形 t :，在基底上形成—阻抗層，材料層與溝 窄:口微影触刻製程’以在材料層中形成-盘 =制《1覓開口，並留下之溝填層呈拱頂狀，其中在進;; 埴# 雜ΐ之侧速敍推抗。魏，去除溝 Μ二出寬開口與窄開口 ’以形成複合開口。 施例所述，上述之複飾_彡^^ 在進仃蝕·程時’溝填層/阻抗層之 在進::=ΐ施例所述，一 進订_製辦’溝填叙_率大於簡層者。 在進施例所述’上述之複合開口的形成方法中， 在進製程時’溝填層/材料層之細選擇比為12至中 阻抗ϊϋΐϊΓ例所述，上述之複合開口的形成方法卜 曰之餘刻率大於材料層之钕刻率。 溝填例所述’上述之複合開σ的形成方法中， /、曰材貝包括無抗反射特性之聚合物。 依照本發明實施例所述，上述之複合開口的形成方法 8 ^06-0271 21932twf.doc/n 200837877 中，在進行蝕刻製程時所使用的氣體包括氟烴。 依照本發明實施例所述，上述之複合開口的形 中，在進行蝕刻製程時所使用的氣體還包括一載氣。/ : 、依照本發明實施例所述，上述之複合開口的形成方法 在進行钱刻製程時所使用的氣體還包括一調整氣體。 本發明之雙重金屬職結翻製造枝，其加 頂角圓化的現象，防止相鄰的兩個雙重金屬镶嵌結構發生料= 的現象且可㈣免介層制口則形成栅攔狀的介電^。巧 本發明之複合開Π的形成方法，其可崎免寬開/ 化現象且可避免窄開口頂角形成栅攔狀的祕。 、貝 為讓本發明之上述和其他目的、特徵和優點能更明 文鱗較龄麵，並配合騎时，作詳細軸如下。 【實施方式】 實施例一 請參照® 3A，本實施例之雙重金屬鑲喪結構是形 -基底3G0上。此基底上已形成一導電層地且 302上已覆蓋-襯層姻。基底例如是—半麻二 石夕基底或是絕緣層上有發基底。導電層搬例如是二金屬表 如G2 抑以防止導 私a K匕’其材質例如是一層象化石夕層，形成的方法魅 是化學氣相沈積法。在襯層綱上形成—層介電層娜，並 質例如是低介料崎料。低介電常姆料為介電常數低於4 物^是氟摻雜魏璃；德半氧化物如氫石夕 « +乳物（y rogen Sllsesqui_ane HSQ)、甲基矽倍半氧化 9 21932twf.doc/n 200837877 witxv>xv-x,v)06-027 1 物(Methyl silsesquioxane，MSQ)與混合有機石夕烧聚合物 (Hybrido-organo siloxane polymer，HOSP);芳香族後氫化合物 (Aromatic hydrocarbon)如 SiLK ； 有機石夕酸鹽玻璃 (Organosilicate glass)如碳黑(black diamond，BD)、3MS、4MS ; 聚對二甲苯(Parylene);氟化聚合物(Fluoro-Polymer)如 PFCB、 CYTOP、Teflon ;聚芳醚(Poly(arylethers))如 PAE-2、FLARE ; 多孔聚合物(Porous polymer)如 XLK、Nanofoam、Awrogel ; Coral等。在一實施例中，在介電層306上還形成頂蓋層3〇8， 其材質包括氮化矽、碳化矽、碳氧化矽(SiCO)、碳氮化石夕 (SiCN)、碳氮氧化石夕(SiCNO)、氮氧化石夕等，形成的方法例如 疋化學氣相沈積法。 之後，請參照圖3B，進行微影、钱刻製程，以在介電層 306中形成介層窗開口 310。兹刻製程的敍刻氣體例如是 CFVAr/N2或是cmyAr/N2。接著，在介層窗開口 31〇中填入 一溝填層312。此溝填層3Π沈積的均勻度佳，在密集區與疏 鬆區的差異小。溝填層312之材質包括無抗反射特性之聚合 物，例如是GF43⑽DUV52，形成的方法例如是旋轉塗佈 法。 其後，請參照圖3C，去除部分的溝填層312，留下介層 窗開口細之中的溝填層仙。留下來的溝填層仙可以是 具有大致呈平坦之表面者，或是呈财_兩邊高的凹陷表 =去除部分的溝填層312力方法可以採用回賴法。接著， ^底^上形成阻抗層M4，例如是底層抗反射層(驗c)。 訂的屢填層312a，其高度並無特別的限制，可以是^或是 200837877 06-0271 21932tw£doc/n h2(以虛線表示之）。溝填層312回蝕的均勻度佳，留在密集區 與疏鬆區晴填層312a並無太大的差異，因此，後續形成的 阻抗層314的均勻度佳且表面非常平坦，故，後續微影製程不 會因為基底表面上的高度高低起伏不平而影響其圖案化的品 =。之後，在阻抗層314上形成一層圖案化的光阻層316。此 光阻層316具有-開口圖案318，此開口 _ 318為預定在介 電層306中形成溝渠之圖案。 其後，請參照圖3D，以光阻層316為罩幕，蝕刻阻抗層 314與介電層306，以將開口圖案318轉移至介電層3〇6 在其中形成-溝渠32〇。此溝渠320與介層窗開口 連通。 在進仃侧製程時，溝填層312a之細速率大於阻抗層 之姓刻速率，且溝填層312a之姓刻率大於介電層3〇6之钱刻 率。較佳的是溝填層312a之姓刻率大於阻抗層314之蝕刻速 率’且阻抗層314之蝕刻速率大於介電層3〇6之蝕刻率。溝填 層312a/阻抗層314之蝕刻選擇比例如是3至Li，且溝填層 312a/介電層306之敍刻選擇比例如是12至2。在一實施^ 中二此钕刻製程是使用在餘刻過程中可以形成較多聚合物之钱 刻^體，例如是以不含氧氣的氣體來做為侧劑，如氟烴。氟 煙是選自於CL、CFsH、0¾、CFH3及其混合物所組成之 知群。在一實例中，是在25〇毫托下，以1555嶋之^^以及 95sccm之CF3H做為蝕刻氣體進行蝕刻製程。在另一實施例 二’此，刻製程所使用之_氣體除了氟烴之外，還可包含載 氣例如是氬。在又一實施例中，除了氟烴以及載氣之外，還可 再加入調整氣體例如是氮氣或一氧化碳。 11 200837877 ^ivi^jur^006-0271 21932twf.doc/n 由於在餘刻的過程中所選用的钱刻氣體為可以形成較多 聚合物之钱刻氣體，其在餘刻過程中所形成的聚合物可以保護 溝渠頂角處的介電層不受糊的破壞，目此，不會有溝渠 圓化所造成的橋制題。另—方面，由於溝填層312a⑽刻 率大於阻抗層似以及介電層3〇6之餘刻率，因此，在钱刻的 過程中，-旦裸露出溝填層3以，溝填層將很快被钱刻， 使得蝕刻製程之後所留下之溝填層312b呈拱頂狀。#溝填層 • 皿的高度較高，為hl時，留下之溝填層312b如C1 ;當^ 填層3Ha的南度較低，為h2時，留下之溝填層迎如以 虛線表示之)。不論是溝填層31;2b為C1或Ο，均不會有溝殖 】遮蔽效應，在介層窗開π 31G的頂祕不會殘留柵^大的^ 電層。 接著’請參照圖3E，去除光阻層316、阻抗層314以及 溝填層312b。在-實施例中，光阻層316、阻抗層314以及 填層312b可以同時去除，例如是以氧電聚灰化法來完成之。 之後’去除介層窗開口 310所裸露出來的；^層304。其後，在 基底300上形成導電層322，填入於溝渠wo與 之中。通常，導電層322包括金屬層324以及阻心 p章層326之材質例如是氮化鈦或是氮化组。金屬層324例如是 銅金屬層。 之後，請參照圖3F，移除部分的導電層幻2，留下溝 32〇以及介層窗開〇 31〇之中的導電層3瓜，此導電層 包括金屬層324a以及阻障層326a。移除的方法可以採S用化學 機械研磨法。在進行研磨的過程中，可以頂蓋層3〇8做為研^ 12 200837877 06-0271 21932twf.doc/n 終止層，避免基底300上密集區與疏鬆區研磨速率不同所導致 的介電層306被過度研磨的問題。 實施例二 圖4A至4D是緣示本發明實施例之一種形成複合開口的 流程剖面示意圖。 、,請參照圖4A，在基底_上形成一層材料層傷，其材 貝並無特別之限制，例如是一層介電層如氧化矽層或是預定形 φ 叙合開ϋ之任何材質，其形成的方法例如是化學氣相沈積 法。之後，進行微影、蝕刻製程，以在材料層4〇6中形成窄開 口 410。钱刻製私的侃ij氣體與介電層之材質有關。當材料層 406為氧化矽時，蝕刻的氣體例如是CF4/Ar/N2或是 CHFVAr/N2。接著，在窄開口 410中填入一溝填層412。此溝 填層412沈積的均勻度佳，在密集區與疏鬆區的差異小。溝填 層412之材質包括無抗反射特性之聚合物，例如是GF43以及 DUV52，形成的方法例如是旋轉塗佈法。 其後，請參照圖4B，去除部分的溝填層412，留下窄開 鲁 口 410之中的溝填層412a。留下來的溝填層4Ua可以是具有 大致呈平坦之表面者，或是呈現中間低兩邊高的凹陷表面。去 除部分的溝填層412的方法可以採用回蝕刻法。接著，在基底 400上形成阻抗層(baRC)414。由於溝填層412a的高度並無 特別的限制，可以是1¾或h4(以虛線表示之）。溝填層412回蝕 的均勻度佳，留在密集區與疏鬆區的溝填層412a並無太大的 差異，因此，後繽形成的阻抗層414的均勻度佳且表面非常平 坦’故’後續微影製程不會因為基底表面上的高度高低起伏不 13 200837877 ^…^^ -j〇6-〇271 21932twf.doc/n 平而影響其圖案化的品質。之後，在阻抗層414上形成一層圖 案化的光阻層416。此光阻層416具有一開口圖案418，此開 口圖案418為預定在材料層406中形成寬開口之圖案。 其後，請參照圖4C，以光阻層416為罩幕，蝕刻阻抗層 414與材料層4〇6，以將開口圖案418轉移至材料層4〇6，而 在其中形成一寬開口 420。此寬開口 420與窄開口 41〇連通。 在進行餘刻製程時，溝填層412a之餘刻速率大於阻抗層414 φ 之姓刻速率，且溝填層412a之钕刻率大於材料層406之钱刻 率。較佳的是溝填層412a之钱刻率大於阻抗層414之#刻速 率之蝕刻速率，且阻抗層414之蝕刻速率大於材料層4〇6之姓 刻率。溝填層412a/P且抗層414之钱刻選擇比例如是3至u， 且溝填層412a/材料層406之钱刻選擇比例如是12至2。在一 t施例中，材料層4G6為氧化秒，此侧製程是使用在钱刻過 程中可以形成較多聚合物之敍刻氣體，例如是以不含氧氣的氣 體來做為钱刻劑’如氟烴。氟烴是選自於CF4、CF3H、〇ί2Ρ2、 C™3、及其混合物所組成之族群。在-實例中，是在25〇 2毫2托 :’以155sccm之CI?4以及95sccm之⑶由做為侧氣體進 打侧製程。在另-實簡巾，祕難程所使用之侧氣體 除了氟烴之外’還可包含載氣例如是氬。在又一實施例中，除 了氣触及航之外，射再加塌魏制如是氮氣或—氧 化碳。由触爛的過程巾所_的侧氣體為可以形成較多 =合物之_纽，其在_過程帽職的聚合物可以保護 寬開口頂角處的材觸;^受綱的破壞，因此，不會有二 頂角圓化的問題。另-方面，由於溝填層仙之侧率大於 14 .^06-0271 21932twf.doc/n 200837877 阻抗層414以及材料層4〇6之_率，因此，在蝴的過程中， -旦裸露出溝填層412a，溝填層仙將很快被蝕刻，使得行 賴製程之後所留下之溝填層_呈拱頂狀。當溝填層恤 的南度較〶’為h3時’留下之溝填層如C3 ;當溝殖層 =的南度較低，為h4時’留下之溝填層鄕如叫以虛ς 表不之）。因此，不論溝填層4l2b為C3或C4均不會有溝埴 的遮蔽效應，在窄開口彻的頂角處不會殘留栅攔狀 、盖植Ϊ著’請參照圖仍’去除光阻層416、阻抗層414以及 =層悩，裸露出窄開口 _，其與寬開口物共同構成一 口 430。在一實施例中’光阻層416、阻抗層414以及 溝填層他可以同時去除，例如是以氧電襞灰化法來完成之。 1上複合開σ的製造方法可叫於任何同時需要形成 見開口與窄開口的製程之中。 χ 中使和的製造方法，_在絲成的窄開口之 Γ1 阻抗層的溝填層，而在侧寬開口之 打來的溝填層之上表面賴狀，目此，可避免ϋ 角圓化的現象，且可以避免窄開口則形成栅欄避免屢木頂 2明之雙重金屬做結翻製造錢巾，因為在 了蝴率較高於阻抗層的溝填層’而在 :來的溝填層之上表面成拱狀，因此， I溝朱頂角圓化的現象，同時可在無氧的環境下操作蝕 構料捧㈣相Γη 鄰的兩個雙重金屬鑲嵌結 介= 可以避免介層窗開口形成栅攔狀的 15 200837877 J06-0271 21932twf.doc/n 【圖式簡單說明】 圖1是繪示習知一種雙重金屬鑲嵌製程中形成之栅欄狀 之介電層的剖面示意圖。 圖2是繪示習知一種雙重金屬鑲嵌製程中溝渠頂角圓化 所產生橋接現象的剖面示意圖。 圖3A至3F是繪示本發明實施例之一種雙重金屬鑲嵌製 程的剖面示意圖。 圖4A至4D是繪示本發明實施例之一種複合開口之製程 流程剖面示意圖。 【主要元件符號說明】 101、122、324、324a :金屬層 106、306 :介電層 106a :柵欄狀的介電層 110、310 :介層窗開口 110a、120a :頂角 112、312、312a :溝填層 120、320 :溝渠 300 ··基底 302 :導電層 304 :襯層 314 :阻抗層 316 :光阻層 318 :開口圖案 322、322a :導電層 326、326a :阻障層 16200837877 uivi^u-au06-0271 21932tw£doc/n IX. Description of the Invention: [Technical Field] The present invention is a semiconductor manufacturing process, and is a method for forming a composite opening and applying the same Double metal inlay process. [Prior Art] = The increase in the accumulation of semiconductors, the multiple gold _ _ use more, the wide f. Generally, the lower the resistance of the metal layer of the multiple metal interconnect, the higher the element can be, and the better the performance of the component. In the metal simplification, copper metal is very suitable for use as a multi-metal interconnect. However, due to the brittleness of copper metal, it has been developed as a dual-to-since process. 1 Metal inlaying is a technique in which a trench and a via are filled in a dielectric layer to form a metal wire and a via. There are many kinds of methods for double gold gates. There are many kinds of methods. Some have formed openings in the dielectric shots before forming trenches. Others form trenches first and then form vias. # #制=形卢成介窗窗形成形成沟渠方法 The double metal inlay ί 的 蝴 过程 过程 过程 ' 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 对应 对应 对应 对应 对应 对应 对应 对应 对应 对应 对应 对应 对应 对应 对应In the above question, in order to avoid the damage of the metal layer on the side of the opening of the mesoporous window, the currently known - Luru '疋 is formed in the dielectric layer 106. After the window opening no, the trench filling layer 112 is first filled in the intervening 11G to avoid the metal layer 102 under the via opening 110 being subjected to engraving damage. However, this method is often referred to as the shadowing effect of the trench fill layer 112 by 5 200837877 ^ινχν^χν-ζ.ν〇6-〇271 21932twf.doc/n, and after forming the trench 120 in the subsequent engraving, A fence-like dielectric layer 106a remains at the apex opening 110a of the layer window, causing a problem of component reliability. However, there are often many difficulties in eliminating the barrier-like dielectric layer. It is a measurable method to avoid the formation of the gate-like dielectric layer by adjusting the height of the trench fill layer, but due to the poor uniformity of the money and the micro-loading effect (1111(^〇1〇3(^1培) 6 The effect of saturating ()|;), the thickness of the trench fill at the center of the substrate and the thickness of the trench fill at the edge of the substrate, or the thickness of the trench fill in the collection area and the trench fill in the loose area of the substrate The thickness of the process often varies greatly, making the process window very narrow. On the other hand, please refer to Figure 2, if it is to avoid the formation of a grid-like electrical layer during the etching process, the use of less polymer Qian An agent to carry out the engraving process of the ditch, the dielectric layer 1〇6 at the top corner 120a of the trench 120 will be destroyed by the money engraving agent because there is no polymer protection, resulting in the miscellaneous m top The phenomenon is that when the subsequently deposited metal layer 122 is filled with the two double damascene structures adjacent to the top of the ditch, it may be. Therefore, the purpose of the present invention is to provide Manufacture of double damascene structure The phenomenon prevents the adjacent two double-to-belonged structures from bridging. The purpose of Fang Fengben is to provide a double-metal damascene structure to avoid the formation of a barrier-like dielectric layer. In order to avoid the re--the purpose is to provide a method for forming a composite open σ, which can open the apex angle and avoid the narrow opening apex to form a grid-like shape. 200837877 um^-zu06-0271 2I932twf.doc/n A double metal damascene process is proposed. This side == Cong layer 'and forms a via window opening therein, and a resistive layer is formed on the bare i bottom. Thereafter, it is performed;; / 冓 层 layer is formed in the base layer - ditch And make it leave: Ditch == Cheng 2 in the dielectric butterfly office, after guessing the material, remove the trench fill layer, the impedance layer and the interlayer window open exposed layer. The channel and the via window are opened π towel forming - Conductive layer. The lining layer of the lining is further described in the embodiment of the present invention. In the above process, the trench filling layer/impedance layer process is 'in accordance with the present embodiment, to u. According to the implementation of the present invention, the above-mentioned day and day are inscribed. When the f process is performed, the money of the trench fill layer/dielectric layer is selected. According to the embodiment of the present invention, the above double ":. 2 to 2. The paste ratio of the anti-layer is greater than the rate of the dielectric layer. ... in the process of 'resistance according to the embodiment of the present invention, the above-mentioned _ The gas remaining in the process is in the oxygen-free domain process, and in the process according to the embodiment of the present invention, the gas used in the process of performing the engraving process includes a fluorine U-year process, according to an embodiment of the present invention. Said, above: In the process of conducting the eclipse, the gas used in the remark process is also included in the process of the town, and the gas is in the process of 5 weeks. The invention 200837877 UMCD-2006-0271 21932twf.doc/n 〗 〖Double Jinlin Silk, dielectric material including μ Jing Shi Jing Shu 'The above double damascene process is further included in the formation of the layer before the opening of the window A cap layer is formed on the electrical layer. In the double metal inlay process described above, the trench fill material comprises a polymer having no anti-reflective properties. Material sound book - the method of seeing and opening the whistle. Forming on the substrate - forming a narrow opening, and then forming a narrow opening in the shape of t: forming a resistive layer on the substrate, the material layer and the groove being narrow: the lithography process is formed in the material layer - Plate = system "1 觅 opening, and leaving the trench filling layer in the shape of a dome, which is in;; 埴 # ΐ ΐ ΐ 。 。 。 。 。 。 。 Wei, remove the groove and open the wide opening and the narrow opening to form a composite opening. According to the example, the above-mentioned embossing _彡^^ is in the process of eroding and eroding. The groove filling layer/impedance layer is in the following::= ΐ ΐ 所述 , 一 一 进 进 进 制 制 制 制 制 制The rate is greater than the simple layer. In the method for forming the composite opening described in the above-mentioned embodiment, the method for forming the composite opening described above is as described in the example of 12 to medium impedance in the case of the hexadecimal range. The remaining rate is greater than the engraving rate of the material layer. In the method of forming the above composite opening σ, the / coffin shell includes a polymer having no antireflection property. According to the embodiment of the present invention, in the above-mentioned method for forming a composite opening, the gas used in the etching process includes a fluorocarbon. 8^06-0271 21932 twf.doc/n 200837877. According to an embodiment of the present invention, in the form of the composite opening described above, the gas used in the etching process further includes a carrier gas. /: According to the embodiment of the present invention, the method for forming the composite opening described above also includes an adjustment gas when the gas engraving process is performed. The double metal work knot manufacturing branch of the invention has the phenomenon of rounding the top corner, preventing the occurrence of the material of the adjacent two double damascene structures and (4) forming the barrier-like medium by the interface of the free layer. Electric ^. The method for forming the composite opening of the present invention can avoid the wide opening/closing phenomenon and can avoid the secret of the narrow opening apex to form a barrier. In order to make the above and other objects, features and advantages of the present invention more apparent, the detailed axis is as follows. [Embodiment] Embodiment 1 Referring to ® 3A, the double metal inlaid structure of this embodiment is formed on the substrate 3G0. A conductive layer has been formed on the substrate and 302 has been covered with a liner. The substrate is, for example, a semi-matrix or a substrate having an insulating layer. The conductive layer is, for example, a two-metal watch such as G2 to prevent the conduction of a K匕'. The material is, for example, a layer of a fossil layer, and the method of formation is chemical vapor deposition. A layer of dielectric layer is formed on the underlayer, and the quality is, for example, low-intercalation. The low dielectric constant material has a dielectric constant of less than 4, which is a fluorine-doped Wei glass; a German semi-oxide such as Hydrogen Sllsesqui_ane HSQ, and a methyl sesquioxide oxidized 9 21932 twf. Doc/n 200837877 witxv>xv-x,v)06-027 1 (Methyl silsesquioxane, MSQ) and Hybrido-organo siloxane polymer (HOSP); Aromatic hydrocarbon Such as SiLK; Organosilicate glass such as black diamond (BD), 3MS, 4MS; Parylene; Fluoro-Polymer such as PFCB, CYTOP, Teflon Poly(arylethers) such as PAE-2, FLARE; Porous polymers such as XLK, Nanofoam, Awrogel; Coral, and the like. In an embodiment, a cap layer 3〇8 is further formed on the dielectric layer 306, and the material thereof includes tantalum nitride, tantalum carbide, tantalum carbonitride (SiCO), carbonitride (SiCN), and carbonitride. A method of forming SiC (Nitrogen Oxide), Nitrous Oxide, or the like, for example, a rhodium chemical vapor deposition method. Thereafter, referring to FIG. 3B, a lithography process is performed to form a via opening 310 in the dielectric layer 306. The engraved gas of the etching process is, for example, CFVAr/N2 or cmyAr/N2. Next, a trench fill layer 312 is filled in the via opening 31A. The uniformity of the deposition of the trench layer 3 is good, and the difference between the dense region and the loose region is small. The material of the trench fill layer 312 includes a polymer having no anti-reflection property, such as GF43(10)DUV52, and the formation method is, for example, a spin coating method. Thereafter, referring to Fig. 3C, a portion of the trench fill layer 312 is removed, leaving a trench fill layer in the opening of the via window. The remaining trench fills can be either a generally flat surface, or a recessed table with two sides high = a partially removed trench fill 312 force method can be used. Next, a resistive layer M4 is formed on the bottom, for example, an underlying anti-reflective layer (test c). The order of the repeated fill layer 312a is not particularly limited and may be ^ or 200837877 06-0271 21932 tw/doc/n h2 (indicated by a broken line). The uniformity of the etch back of the trench fill layer 312 is good, and there is not much difference between the dense region and the loose fill layer 312a. Therefore, the uniformity of the subsequently formed resistive layer 314 is good and the surface is very flat, so the subsequent micro The shadowing process does not affect the patterned product due to the height of the substrate surface. Thereafter, a patterned photoresist layer 316 is formed over the resistive layer 314. The photoresist layer 316 has an opening pattern 318 which is a pattern intended to form a trench in the dielectric layer 306. Thereafter, referring to FIG. 3D, the photoresist layer 316 is used as a mask to etch the resistive layer 314 and the dielectric layer 306 to transfer the opening pattern 318 to the dielectric layer 3〇6 to form a trench 32〇 therein. The trench 320 is in communication with the via opening. In the process of the enthalpy side, the fine rate of the trench fill layer 312a is greater than the singular rate of the resistive layer, and the surname ratio of the trench fill layer 312a is greater than the dielectric etch rate of the dielectric layer 3〇6. Preferably, the address of the trench fill layer 312a is greater than the etching rate of the resistive layer 314 and the etching rate of the resistive layer 314 is greater than the etching rate of the dielectric layer 3〇6. The etching selectivity ratio of the trench fill layer 312a/impedance layer 314 is, for example, 3 to Li, and the sculpt selection ratio of the trench fill layer 312a/dielectric layer 306 is, for example, 12 to 2. In one implementation, the encapsulation process uses a solvent that can form more polymer during the remainder process, such as a gas that does not contain oxygen as a side agent, such as a fluorocarbon. Fluorine is selected from the group consisting of CL, CFsH, 03⁄4, CFH3 and mixtures thereof. In one example, an etching process is performed using an anode of 1555 Å and 95 cc of CF3H as an etching gas at 25 Torr. In another embodiment, the gas used in the engraving process may contain a carrier gas such as argon in addition to the fluorocarbon. In still another embodiment, in addition to the fluorocarbon and the carrier gas, an adjustment gas such as nitrogen or carbon monoxide may be further added. 11 200837877 ^ivi^jur^006-0271 21932twf.doc/n Since the money used in the process of the engraving is a gas that can form more polymer, the polymerization formed during the process The material can protect the dielectric layer at the top corner of the trench from the damage of the paste. Therefore, there is no bridge problem caused by the rounding of the trench. On the other hand, since the groove fill layer 312a (10) has a higher engraving rate than the resistive layer and the remaining rate of the dielectric layer 3〇6, in the process of engraving, the trench fill layer 3 is exposed, and the trench fill layer will It is quickly engraved so that the trench fill 312b left after the etching process is dome-shaped. #沟填层• The height of the dish is higher. When it is hl, the groove 312b left is like C1. When the south of the layer 3Ha is lower, it is h2, leaving the groove to be covered with a dotted line. Express it). No matter whether it is the trench filling layer 31; 2b is C1 or Ο, there will be no zoning effect, and the top layer of π 31G will not remain in the interlayer window. Next, referring to Fig. 3E, the photoresist layer 316, the resistive layer 314, and the trench fill layer 312b are removed. In an embodiment, the photoresist layer 316, the resistive layer 314, and the fill layer 312b may be simultaneously removed, such as by oxygen ashing. Thereafter, the layer 304 exposed is removed. Thereafter, a conductive layer 322 is formed on the substrate 300 to be filled in the trenches. Generally, the conductive layer 322 includes a metal layer 324 and the material of the core stop layer 326 is, for example, titanium nitride or a nitrided group. The metal layer 324 is, for example, a copper metal layer. Thereafter, referring to FIG. 3F, a portion of the conductive layer 2 is removed, leaving a trench 32 and a conductive layer 3 in the via opening 31. The conductive layer includes a metal layer 324a and a barrier layer 326a. The method of removal can be performed by chemical mechanical polishing. During the grinding process, the cap layer 3〇8 can be used as the termination layer to avoid the dielectric layer 306 caused by the different polishing rates of the dense region and the loose region on the substrate 300. The problem of being overgrinded. Embodiment 2 Figs. 4A to 4D are schematic cross-sectional views showing a process of forming a composite opening according to an embodiment of the present invention. Referring to FIG. 4A, a layer of material layer damage is formed on the substrate_, and the material is not particularly limited, and is, for example, a dielectric layer such as a ruthenium oxide layer or any material of a predetermined shape φ. The method of formation is, for example, a chemical vapor deposition method. Thereafter, a lithography and etching process is performed to form a narrow opening 410 in the material layer 4〇6. The 侃ij gas, which is made by money, is related to the material of the dielectric layer. When the material layer 406 is yttrium oxide, the etched gas is, for example, CF4/Ar/N2 or CHFVAr/N2. Next, a trench fill 412 is filled in the narrow opening 410. The uniformity of the deposition of the trench 412 is good, and the difference between the dense region and the loose region is small. The material of the trench fill layer 412 includes a polymer having no anti-reflection property, such as GF43 and DUV52, and the formed method is, for example, a spin coating method. Thereafter, referring to Fig. 4B, a portion of the trench fill layer 412 is removed, leaving a trench fill layer 412a in the narrow open port 410. The remaining trench fill layer 4Ua may be a surface having a substantially flat surface or a concave surface having a low height on both sides. The method of removing a portion of the trench fill layer 412 may employ an etch back method. Next, a resistive layer (baRC) 414 is formed on the substrate 400. Since the height of the groove filling layer 412a is not particularly limited, it may be 13⁄4 or h4 (indicated by a broken line). The uniformity of the etch back of the trench fill layer 412 is good, and there is not much difference between the trench fill layer 412a remaining in the dense region and the loose region. Therefore, the uniformity of the resistive layer 414 formed by the back layer is good and the surface is very flat. Subsequent lithography process does not affect the quality of the pattern because of the height of the substrate surface. Thereafter, a patterned photoresist layer 416 is formed over the resistive layer 414. The photoresist layer 416 has an opening pattern 418 which is a pattern intended to form a wide opening in the material layer 406. Thereafter, referring to FIG. 4C, with the photoresist layer 416 as a mask, the resistive layer 414 and the material layer 4〇6 are etched to transfer the opening pattern 418 to the material layer 4〇6, and a wide opening 420 is formed therein. This wide opening 420 is in communication with the narrow opening 41. During the engraving process, the rate of the residual layer 412a is greater than the rate of the resist layer 414 φ, and the encapsulation rate of the trench fill 412a is greater than the enrichment rate of the material layer 406. Preferably, the etch rate of the trench fill layer 412a is greater than the etch rate of the resistive layer 414, and the etch rate of the resistive layer 414 is greater than the singularity of the material layer 4〇6. The groove fill layer 412a/P and the resist layer 414 have a choice ratio of, for example, 3 to u, and the groove fill layer 412a/material layer 406 has a cost selection ratio of, for example, 12 to 2. In one embodiment, the material layer 4G6 is oxidized seconds. This side process is a gas that can form more polymer during the process of engraving, for example, using oxygen-free gas as a money engraving agent. Such as fluorocarbons. The fluorocarbon is a group selected from the group consisting of CF4, CF3H, 〇ί2Ρ2, CTM3, and mixtures thereof. In the example, it is at 25 〇 2 Torr 2 Torr: 'CI? 4 at 155 sccm and (3) at 95 sccm are used as side gas in the side process. In addition to the fluorocarbons, the side gas used in the simplification can also include a carrier gas such as argon. In still another embodiment, in addition to the gas touch, the shot is made of nitrogen or carbon monoxide. The side gas from the touched process towel can form more = compound, which can protect the material touch at the top corner of the wide opening in the process of the process cap; There will be no problem with rounding the corners. On the other hand, since the rate of the side of the trench fill is greater than 14 .^06-0271 21932twf.doc/n 200837877 the impedance layer 414 and the material layer 4〇6, so, in the process of the butterfly, The trench fill layer 412a, the trench fill layer will be etched very quickly, so that the trench fill layer left after the process is in a dome shape. When the south of the ditch-filled shirt is less than 'when h3', the ditch is filled with a layer such as C3; when the ditch's layer is lower than the south, when h4 is left, the ditch is filled with a ditch. ς Not shown). Therefore, no matter whether the trench filling layer 4212 is C3 or C4, there is no shadowing effect of the gully. At the apex angle of the narrow opening, there is no residual barrier, and the coating is removed. Please refer to the figure to remove the photoresist layer. 416, the impedance layer 414 and the layer 悩, barely opening the narrow opening _, which together with the wide opening constitute a mouth 430. In one embodiment, the photoresist layer 416, the resistive layer 414, and the trench fill layer can be removed simultaneously, for example, by oxygen ashing. The manufacturing method of the composite open σ can be called any process that requires the formation of openings and narrow openings at the same time. χ The manufacturing method of 使 和 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The phenomenon of the phenomenon, and can avoid the narrow opening to form a fence to avoid the double metal of the wooden top 2 to make the money to make the money towel, because the groove is higher than the impedance layer of the groove layer The upper surface of the layer is arched, so the rounding angle of the I groove is at the same time, and the etched material can be operated in an anaerobic environment. The two double damascene junctions of the (n) phase Γ neighbors can be avoided. The opening of the window forms a grid-like shape. 200837877 J06-0271 21932twf.doc/n [Simplified Schematic] FIG. 1 is a schematic cross-sectional view showing a barrier-like dielectric layer formed in a conventional dual damascene process. Fig. 2 is a schematic cross-sectional view showing the bridging phenomenon caused by the rounding of the apex angle of a trench in a conventional dual damascene process. 3A through 3F are cross-sectional views showing a dual damascene process in accordance with an embodiment of the present invention. 4A to 4D are cross-sectional views showing the process flow of a composite opening according to an embodiment of the present invention. [Main component symbol description] 101, 122, 324, 324a: metal layer 106, 306: dielectric layer 106a: barrier-like dielectric layer 110, 310: via opening 110a, 120a: vertex angles 112, 312, 312a : trench fill layer 120, 320: trench 300 · substrate 302: conductive layer 304: liner 314: resistive layer 316: photoresist layer 318: opening pattern 322, 322a: conductive layer 326, 326a: barrier layer 16