200837876 9403 〗22341 twf.doc/n 九、發明說明： 【發明所屬之技術領域】 本發明是有關於一種半導體製程，且特別是有關於一 種溝填方法及淺溝渠隔離結構的製造方法。 【先前技術】 傳統淺溝渠隔離結構是利用非等向性蝕刻的方法先在 半導體基底中形成溝渠，再於此溝渠中填入氧化物以形 成’而作為元件之隔離區。此隔離區具有調整大小（scalabie) 的優點，並且可避免傳統區氧化(l〇cal oxidati〇n，LOCOS) 法隔離技術中鳥嘴侵I虫的缺點，因此，對於次微米 (sub-micron)金氧半導體(metal oxide semiconductor，M0S) 製程而言，是一種較為理想的隔離技術。 然而’隨著溝渠的深寬比(aspect ratio)越來越高，在習 知利用品質較高的高密度電漿氧化矽層（high density plasma (HDP) silicon oxide layer)來製造淺溝渠隔離結構 時，由於高密度電漿氧化矽層的溝填(gap_fllling)能力較 差，因此會在溝渠中的高密度電漿氧化矽層中形成孔洞 (void)，而使得半導體元件的效能降低。 因此’習知技術在面對溝渠高寬比提高的情況，會先 在溝渠底部中填入溝填能力較佳的流動性氧化石夕層 (flowable silicon oxide layer)，再以高密度電漿氧化矽層& 滿溝渠’使得由於溝渠的南寬比過高而導致溝填能力不^土 的問題得以解決。 圖1所繪示為習知一種淺溝渠隔離結構的剖面圖。 請參照圖1 ’於基底100的溝渠102中形成的淺溝渠 200837876 9403 ] 22341 twf.doc/n 隔離結構104是由流動性氧化石夕層i〇6與高密度電 ，層108所组成。然而’在形成流動性氧化“= :T巧性ΐ化石夕層106會殘留在溝渠1〇2的:〗壁上！而 恭路出部分流動性氧化矽層]〇6。 者 =溝渠隔離結構W4進行一個濕式:刻製 正淺溝渠隔離結構1()4的高度時，品f較差的 。 快速地移除’造錢溝渠^ ====更嚴重的情況是造成 【發明内容】 一種溝填方法 有鑑於此，本發明的目的就是在提供 具有較佳的溝填能力。 另—目的就是在提供—種淺溝渠隔離結構的 衣xe方法，能夠有效控制淺溝渠隔離結構的輪廓，且 有剝離的情況出現。 曰 本發明提出一種溝填方法，首先提供基底，於基底中 已形成有溝渠。接著，於部分溝渠中形成流動性氧化^夕層。 然後、，進行—個氫電漿處理製程，以移除殘留於溝渠^壁 上的流動性氧化矽層。接下來，形成填滿溝渠的高密产= 漿氧化石夕層。 X毛 依照本發明的一實施例所述，在上述之溝填方法中， 飢動性氧化;S夕層的形成方法包括化學氣相沈積法。 依照本發明的一實施例所述，在上述之溝填方法中， 化车氣相沈積法所使用的反應氣體包括石夕燒、氧氣及气氣 200837876 9403! 2234〗 twfdoc/n 依,¾本發明的 ^ 流動性氧化秒舞的貫施例所述，在上述之溝填方法中， 依照本發日^㈣包括旋塗式玻璃材料。 流動性氧化石夕層；：Γ例所述’在上述之溝填方法中， 依照本發 於氫電漿處理梦e斤处，在上述之溝填方法中， 氧化石夕層。中，更包括移除形成於基底上的流動性 依π本發明的—實施例 高密度電漿氧化矽层从牡上述之溝填方法中， 化學氣相沈積製程y Μ方法包括進行—個高密度電漿 一反應機台中同位:^度^化學氣相沈積製程包括在同 /itli發月提&㊣淺溝渠隔離結構的製造方法，首先提 /、土氐，於基底上已形成有罩幕層，且於 、、、、仃〆口氫私名處理製程，以移除殘留於溝渠側辟 上的流動性氧化料。然後，形成填滿溝渠的高密度電= 氧化矽層。接下來，移除罩幕層。 水 依照本發明的-實施例所述，在上述之淺溝渠隔離社 構的製造方法巾’流祕氧切層的形成方法包括化^ 相沈積法。 ^ 依照本發明的一實施例所述，在上述之淺溝渠隔離社 構的製造方法巾，域相沈積法所使㈣反純體包括$ 200837876 94031 22341twf.d〇c/n 烧、氧氣及氫氣。 依照本發明的-實施例所述 構的製造方法中，流動性氧化石夕;==離結 材料。 刊了十匕枯碇塗式破璃 依照本發明的一實施例所述，在上述之淺 構的製造方法中，流動性氧化石夕# 水同離結 佈法。 Μ _成方法包括旋轉塗 依以本务明的-實施例所述，在 =製=法中，於氫電漿處理製程中，更包忿= 於罩幕層上的流動性氧化石夕層。 ” 依照本發實施觸述，在 構的製造方法中，高錢電聚氧切層的形成方 行一個高密度電漿化學氣相沈積製程。 枯< 依照本發明的-實施例所述，在上述之淺溝渠隔離結 構的製造方法中，氫電漿處理製程與高密度電漿化學氣相 沈積製程包括在同一反應機台中同位進行。 依照本發明的-實施例所述，在上述之淺溝渠隔離結 構的製造方法中，高密度電漿氧化矽層的形成方法，首^ 於基底上形成焉岔度電漿氧化;5夕材料層，且高密度電漿氧 化矽材料層填滿溝渠。接著，移除溝渠以外的高密度電1 氧化發材料層。 依照本發明的一實施例所述，在上述之淺溝渠隔離結 構的製造方法中，溝渠以外的高密度電漿氧化矽材料層的 移除方法包括化學機械研磨法。 200837876 94031 22341 twf. doc/n 構的卜實施例所述，在上述之淺溝渠隔離結 形成罩幕層之前，更包括於基底上形 成一墊乳化層。 構的的;在上述之淺溝渠隔離結 於移除罩奉層之後，更包括移除墊氧化 f於上述’由於本發明所提出的溝填方 底部填入流動性高的流動性氧化石夕層 化石夕層將溝渠填滿，因此具有較高的溝填能力 於溝渠的南寬比過高而導致溝填能力不佳的問題。 ，外，因為在本發明所提出之淺溝渠隔離結構的製 方法中，會進行一個氫電漿處理製程以移除殘留於 動性氧化矽層，所以在製造出來的淺溝渠隔離:構 ，k動性A切層完全被高密度電漿氧切層所:。 因此，本發明所提出之淺溝渠隔離結構的製造方法= 效地控制淺溝渠隔離結構的輪廓，且能夠 氧化矽層產生剝離的現象。 q山度私水 積f:在程與高密度㈣化學氣相沈 在同-反應機台中同位進行，因此能夠 化製程並縮短製程時間。 > 曰1 ，由於本發明所提出之淺溝渠隔離結構的製 ί中护成ίΓ的Γ真能力’所以能防止在淺溝渠隔離結 構中形成孔洞，而提高半導體元件的效能。 為讓本發明之上述和其它目的、特徵和優點能更明顯 8 200837876 94031 22341 twf.doc/n =下了文特舉較佳實施例’並配合所附圖式，作詳細說 【實施方式】 =斤=為本發明一實施例之溝填方法的流程圖。 百先，㈣照圖2,進行步驟幻 咖。基底的材料例如=1渠 疋對基底進行-個習知的圖案化製程，於 石夕層接1動1Γ02:於部分溝渠中形成流動性氧化 气‘作為反庫；-石J的形成方法例如是以矽烷、氧氣及 學氣相沈積法而形成之。. 式玻璃二料埴上：形成方法也可以利用旋轉塗佈法將旋塗 中而形成之。值得注意的是，於部分 溝木中形成 >瓜動性氧化矽層的同 合 化石夕層形齡絲上，且心有心的飢動性乳 溝渠的側壁上。—心的流動性氧化石夕層會殘留在 使用的=1()4 ’進行—個氫電漿處理製程，所 ㈣，氮氣(H2)與如氮氣等其它氣體_ 80〇/ , ( Γ"ί6 ^〇) ： H2/(H2+〇ther gas) > 動性氧切層。 打仰你_成於基底上的流 氧化石夕層Γ s1Q 6 ’形成填滿溝渠的高密度電漿 円山度电漿虱化矽層的形成方法例如是進行一 9 200837876 94031 22341 twf.doc/n 個南密度電漿化學氣相沈積製程。值得注意的是，氫電漿 處理製程與高密度電漿化學氣相沈積製程，例如是在同一 反應機台中同位進行。反應機台例如是高密度電漿化學氣 相沈積機台。因此，可以有效地簡化製程並縮短製程時間。 在上述實施例所介紹的溝填方法中，是先在溝渠中填 入流動性高的流動性氧化矽層作為墊底的材料，再以高密 度黾桌氧化麥層填滿溝渠，因此如在奈米製程中，深寬 比是4.5的情況下，仍然具有良好的溝填能力。 圖3A至圖3C所繪示為本發明一實施例之淺溝渠隔離 結構的製造流程剖面圖。 首先，請先參照圖3A，提供基底200，於基底200上 已形成有罩幕層204，且於基底200與罩幕層204中已形 成有溝渠206。基底200例如是矽基底。罩幕層2〇4的材 =例如是氮化矽，其形成方法例如是化學氣相沈積法。溝 渠206的形成方法例如是對基底2〇〇進行一個習知的圖案 化製程，於此不再贅述。 /此外^於形成罩募層204之前，可選擇性地於基底2〇〇 上，成墊氧化層202。當罩幕層204的材料為氮化矽時， 墊氧化層2G2能夠避免罩幕層2G4在基底2⑻上產生應 f，且可以增加罩幕層204與基底200之間的黏著力。墊 氧化層2G2 @形成方法例如是熱氧化法。 ^接，，於部分溝渠206中形成流動性氧化矽層2〇8。 流動性氧切層期的形成方法例如是以糾完 氣作為反錢體，_化學氣相沈積法而形成之。此外了 200837876 94031 22341 twf.doc/n 二動!·生氧化發層208的形成方法也可以利用旋轉塗佈法將 f$式玻璃材料填入溝渠中而形成之。值得注意的是，於 部分溝渠206中形成流動性氧化石夕層208的同時，會有部 分的流，性氧化石夕層施形成在罩募層204上，且部分的 流動性氧化石夕層208會殘留在溝渠206的侧壁上。 =後’私照圖3B，進行—個氫電漿處理製程，以移 渠2〇6侧壁上的流動性氧化矽層208。此外， 上理製程中，更可以同時移除形成於罩幕層204 上的流動性氧化矽層2〇6。 ^ 而古形成填滿溝渠206的高密度電漿氧化石夕層210, Sit梦層"Ο與流動性氧化細$峨 ==構2 2。高密軸氧切層21〇的形成方法 底200上度電裝化學氣相沈積製程，以於基 度電漿乳切材料層填滿溝準^… ’⑽ 外的高密度電聚氧化彻二ft溝渠Μ以 同密度電漿氧切材料層的‘ ^施以外的 機械研磨法。 私除方法，包括但不限於化學 值传注意的是，氫雷爿|卢 相沈積製程例如是在同_反：機:二高密度電漿化學氣 有效地簡化製程並縮_程日中同位進行’因此可以 電漿化學氣相沈積機台。獨°反應機台例如是高密度 接下來，請參照圖3C， 的移除方法例如是濕式钱刻^除#層篇。罩幕層施 200837876 94031 22341 twf.doc/n ，後’移除墊氧化層202。塾氧化層2〇2的 2如=式，法，所使用的蝕刻液例如是稀釋的氳氟 二=:塾氧化層202的同時，可以同時降以 M 21G的高度m冓渠隔離結構212 的回度再一次進行調整。 基於上述貝轭例的說明，由於會進行一個氳電漿處理 ‘程以移除殘留於溝渠寫侧壁的流動性氧化發層鹰， 因此在製造出來的淺溝魏離結構212中， 層施會被高密度電漿氧化石夕層210所覆蓋。如此=f 在調整淺溝渠隔離結構犯高度的時候，可以有效地控制 淺溝渠隔離結構212的輪廓，且能夠避免高密度 矽層210產生剝離的現象。 另一方面，由於上述淺溝渠隔離結構212的製造方法 具有良好的溝填能力，所以可以防止錢溝渠隔離結構 212中形成孔洞，而能提高半導體元件的效能。 紅上所述，本發明至少具有下列優點·· ”、1·本發明所提出的溝填方法具有良好的溝填能力，能 解決由於溝渠的高寬比過高而導致溝填能力不佳的問題。 2·依照本發明所提出之淺溝渠隔離結構的製造方法， 可以有效地控制淺溝渠隔離結構的輪廓，且能夠避免高密 度電漿氧化矽層產生剝離的現象。 3·在本發明所提出之淺溝渠隔離結構的製造方法中， 氫電漿處理製程與高密度電漿化學氣相沈積製程是在同一 反應機台中同位進行，因此能夠有效地簡化製程並縮短製 12 200837876 94031 22341 twf.doc/n 程時間。 4·本發明所提出之淺溝渠隔離結構的製造方 好的溝填能力，所以能防止在淺溝渠隔離結構 乂 洞，而能提高半導體元件的效能。 $成孔 雖然本發明已以較佳實施例揭露如上，然其 限定本發明，任何熟習此技藝者，在不脫離本發明之梦= ^口範圍内，當可作些許之更動與潤飾，因此本發明之二 範圍當視後P#之申請專纖圍所界定者為準。 … 【圖式簡單說明】 圖1所繪示為習知一種淺溝渠隔離結構的剖面圖。 圖2所繪示為本發明一實施例之溝填方法的流程圖。 ㈣所繪示為本發明—實施例之淺溝渠隔離 、、、口構的衣造流程剖面圖。 【主要元件符號說明】 100、200 :基底 102、206 ·•溝渠 104、212 :淺溝渠隔離結構 106、208 ··流動性氧化石夕層 108、210 :高密度電漿氧化矽層 202 ·•墊氧化層 204 :罩幕層 S100 ' S1G2 ' S104、S106 :步驟標號 13200837876 9403 〗 22341 twf.doc/n IX. Description of the Invention: [Technical Field] The present invention relates to a semiconductor process, and more particularly to a trench filling method and a method of fabricating a shallow trench isolation structure. [Prior Art] A conventional shallow trench isolation structure uses a non-isotropic etching method to form a trench in a semiconductor substrate, and then fills the trench with an oxide to form an isolation region of the device. This isolation zone has the advantage of scalabie and avoids the disadvantages of the bird's mouth invading the insect in the traditional zone oxidation (LOCOS) isolation technique. Therefore, for sub-micron In the case of metal oxide semiconductor (M0S) process, it is an ideal isolation technology. However, as the aspect ratio of the trench is getting higher and higher, it is customary to use a high-density high-density plasma (HDP) silicon oxide layer to fabricate a shallow trench isolation structure. At the time, since the gap-filling ability of the high-density plasma yttrium oxide layer is poor, voids are formed in the high-density plasma yttrium oxide layer in the trench, and the performance of the semiconductor element is lowered. Therefore, in the case of increasing the aspect ratio of the trench, the conventional technology first fills the bottom of the trench with a flowable silicon oxide layer with better trench filling capacity, and then oxidizes with high density plasma. The 矽 layer & full ditch's problem makes it possible to solve the problem that the ditch filling ability is not due to the fact that the south width ratio of the ditch is too high. FIG. 1 is a cross-sectional view showing a conventional shallow trench isolation structure. Referring to FIG. 1 ' shallow trenches formed in the trenches 102 of the substrate 100 200837876 9403 ] 22341 twf.doc / n The isolation structure 104 is composed of a fluidized oxidized oxide layer 〇6 and a high-density electricity layer 108. However, 'in the formation of fluidity oxidation" = : T ΐ ΐ ΐ 夕 夕 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 106 W4 performs a wet type: when the height of the shallow trench isolation structure 1 () 4 is inscribed, the product f is poor. Quickly remove the 'money ditches ^ ==== more serious situation is caused by the invention] In view of the above, the object of the present invention is to provide a better trench filling capability. The other object is to provide a coating method for shallow trench isolation structures, which can effectively control the contour of the shallow trench isolation structure, and The present invention provides a trench filling method in which a substrate is first provided, and a trench has been formed in the substrate. Then, a fluidized oxide layer is formed in a portion of the trench. Then, a hydrogen plasma is performed. Processing the process to remove the fluidized ruthenium oxide layer remaining on the walls of the trenches. Next, forming a high-density production = slurry oxidized stone layer filling the trenches. X-rays are described above in accordance with an embodiment of the present invention. Ditch filling method An entangled oxidation; the formation method of the S-layer includes a chemical vapor deposition method. According to an embodiment of the present invention, in the above-described trench filling method, the reaction gas used in the vapor deposition method includes Shi Xi Burning, Oxygen, and Gas 200837876 9403! 2234〗 twfdoc/n According to the embodiment of the present invention, in the above-described trench filling method, according to the present day, (4) includes spin coating. Glass material. Fluidized oxidized stone layer;: In the above-mentioned trench filling method, according to the present invention, in the hydrogen slurry treatment method, in the above-mentioned trench filling method, the oxidized stone layer The method further includes removing the fluidity formed on the substrate according to the present invention. The high-density plasma yttrium oxide layer of the present invention is prepared from the above-mentioned trench filling method of the oyster, and the chemical vapor deposition process y Μ method includes performing High-density plasma-reaction machine in the same position: ^ degree ^ chemical vapor deposition process includes the same /itli hair extraction & shallow trench isolation structure manufacturing method, first mention /, soil, has been formed on the substrate Cover layer, and the name of the hydrogen in the mouth, water, and mouth The process is processed to remove the fluid oxidant remaining on the trench side. Then, a high density electrical cerium oxide layer filling the trench is formed. Next, the mask layer is removed. Water in accordance with the present invention - embodiment The method for forming a flow mask of the above-described shallow trench isolation mechanism includes a chemical deposition method. ^ According to an embodiment of the present invention, the shallow trench isolation mechanism is described above. The manufacturing method towel, the domain phase deposition method (4), the anti-pure body includes $200837876 94031 22341 twf.d〇c/n, oxygen, and hydrogen. In the manufacturing method according to the embodiment of the present invention, the fluidity oxidation According to an embodiment of the present invention, in the above-mentioned shallow manufacturing method, the fluidized oxidized stone 夕# water is separated from the cloth. law. Μ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ . According to the embodiment of the present invention, in the manufacturing method of the structure, the formation of the high-oxygen polyoxygenate layer is performed in a high-density plasma chemical vapor deposition process. According to the embodiment of the present invention, In the above method for fabricating a shallow trench isolation structure, the hydrogen plasma processing process and the high density plasma chemical vapor deposition process are performed in-situ in the same reaction machine. According to the embodiment of the present invention, In the method for manufacturing the trench isolation structure, the method for forming the high-density plasma ruthenium oxide layer is first formed on the substrate to form a plasma oxidation, and the high-density plasma yttrium oxide material layer fills the trench. Next, the high-density electric oxide material layer other than the trench is removed. According to an embodiment of the invention, in the method for manufacturing the shallow trench isolation structure, the high-density plasma yttrium oxide material layer other than the trench The removal method includes a chemical mechanical polishing method. 200837876 94031 22341 twf. The structure of the doc/n structure is further included on the substrate before the shallow trench isolation junction forms the mask layer. Forming an emulsion layer; after the shallow trench isolation layer is removed from the cover layer, further comprising removing the pad oxide f to the above-mentioned 'the bottom of the trench filler proposed by the present invention is filled with high fluidity The fluidized oxidized olivine layered fossil layer fills the ditch, so that it has a higher ditch filling ability, and the south width ratio of the ditch is too high, resulting in a problem of poor trench filling ability. Moreover, since it is proposed in the present invention In the method for fabricating the shallow trench isolation structure, a hydrogen plasma treatment process is performed to remove the residual layer of the movable ruthenium oxide, so that the shallow trenches are isolated from the structure: the k-active A-cut layer is completely high-density electricity. The slurry oxygen layer is: Therefore, the method for manufacturing the shallow trench isolation structure proposed by the invention has the effect of effectively controlling the contour of the shallow trench isolation structure and capable of oxidizing the ruthenium layer to cause peeling. q Mountainity private water product f: The process is performed in-situ with high-density (4) chemical vapor deposition in the same-reaction machine, so that the process can be shortened and the process time can be shortened. > 曰1, because of the method of the shallow trench isolation structure proposed by the present invention Really 'Therefore, it is possible to prevent the formation of holes in the shallow trench isolation structure and improve the performance of the semiconductor element. The above and other objects, features and advantages of the present invention can be made more obvious. 200837876 94031 22341 twf.doc/n = The preferred embodiment is described in detail with reference to the accompanying drawings. [Embodiment] = kg = a flow chart of a trench filling method according to an embodiment of the present invention. First, (4) according to Figure 2, the steps are performed. The material of the substrate, for example, the 疋 进行 进行 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋 疋It is formed by decane, oxygen and vapor deposition. The glass is formed on the crucible: the formation method can also be formed by spin coating in a spin coating method. It is worth noting that in the part of the furrow, the > melon-moving cerium oxide layer is formed on the side wall of the symmetry-like germination ditch. - The flow of the heart, the oxidized stone layer will remain in the used =1 () 4 '--hydrogen plasma treatment process, (4), nitrogen (H2) and other gases such as nitrogen _ 80 〇 /, ( Γ " Ί6 ^〇) : H2/(H2+〇ther gas) > Movable oxygen layer. The method of forming a high-density plasma-filled magma layer that fills a trench, for example, is carried out on a 9 200837876 94031 22341 twf.doc/ n Southern density plasma chemical vapor deposition processes. It is worth noting that the hydrogen plasma processing process and the high density plasma chemical vapor deposition process, for example, are performed in-situ in the same reactor. The reaction machine is, for example, a high density plasma chemical vapor deposition machine. Therefore, the process can be simplified and the process time can be shortened. In the trench filling method described in the above embodiments, the fluidity of the high-flowing cerium oxide layer is first filled in the trench as the material of the bottom, and then the high-density slab-oxidized wheat layer fills the trench, so In the rice process, when the aspect ratio is 4.5, it still has a good trench filling ability. 3A to 3C are cross-sectional views showing a manufacturing process of a shallow trench isolation structure according to an embodiment of the present invention. First, referring to FIG. 3A, a substrate 200 is provided. A mask layer 204 has been formed on the substrate 200, and a trench 206 has been formed in the substrate 200 and the mask layer 204. The substrate 200 is, for example, a crucible substrate. The material of the mask layer 2〇4 is, for example, tantalum nitride, and its formation method is, for example, chemical vapor deposition. The method of forming the trench 206 is, for example, a conventional patterning process for the substrate 2, and will not be described again. Alternatively, prior to forming the cap layer 204, the pad oxide layer 202 may be selectively formed on the substrate 2''. When the material of the mask layer 204 is tantalum nitride, the pad oxide layer 2G2 can prevent the mask layer 2G4 from generating the f on the substrate 2 (8), and can increase the adhesion between the mask layer 204 and the substrate 200. The pad oxide layer 2G2 @ formation method is, for example, a thermal oxidation method. Then, a fluid yttria layer 2〇8 is formed in a portion of the trench 206. The formation method of the fluid oxygen layer period is formed, for example, by correcting gas as an anti-money body, chemical vapor deposition method. In addition, 200837876 94031 22341 twf.doc/n two-action! The method of forming the raw oxide layer 208 can also be formed by filling the f$-type glass material into the trench by spin coating. It is worth noting that while the fluidized oxidized stone layer 208 is formed in a portion of the trench 206, there is a partial flow, and the oxidized oxidized stone layer is formed on the cover layer 204, and part of the fluidized oxidized stone layer 208 will remain on the sidewall of the trench 206. = After 'Private Photo 3B, a hydrogen plasma treatment process is performed to remove the fluidized ruthenium oxide layer 208 on the sidewalls of the channel 2〇6. In addition, in the processing process, the fluidized yttrium oxide layer 2〇6 formed on the mask layer 204 can be removed at the same time. ^ The ancient formation of high-density plasma oxidized olivine layer 210 filled with ditch 206, Sit dream layer " Ο and flow oxidized fine 峨 = = structure 2 2 . High-density axial oxygen layer 21〇 formation method bottom 200 upper electric charge chemical vapor deposition process, in order to fill the base of the base plasma cutting material layer ^... '(10) outside the high-density electro-concentration oxidation two ft The trench is a mechanical grinding method other than the application of the same density plasma oxygen cutting material layer. Private methods, including but not limited to chemical values, note that the hydrogen thunder | Lu phase deposition process is, for example, in the same _ counter: machine: two high-density plasma chemical gas to effectively simplify the process and shrink the same time in the process Therefore, it is possible to use a plasma chemical vapor deposition machine. The unique reaction machine is, for example, high density. Next, please refer to FIG. 3C, and the removal method is, for example, a wet method. The mask layer is applied 200837876 94031 22341 twf.doc/n, and the pad oxide layer 202 is removed. 2 of the tantalum oxide layer 2 〇 2, such as =, method, the etching liquid used is, for example, diluted 氲 二 二 = = 塾 塾 202 202, while at the same time can be lowered to the height of M 21G m 冓 isolation structure 212 The adjustment is adjusted again. Based on the above description of the yoke example, since a krypton plasma treatment process is performed to remove the fluid oxidized enamel remaining in the sidewall of the trench, the layer is applied in the shallow trench structure 212. It will be covered by a high density plasma oxidized oxide layer 210. Thus, when the height of the shallow trench isolation structure is adjusted, the contour of the shallow trench isolation structure 212 can be effectively controlled, and the high density tantalum layer 210 can be prevented from being peeled off. On the other hand, since the manufacturing method of the shallow trench isolation structure 212 has a good trench filling capability, holes can be formed in the trench isolation structure 212, and the performance of the semiconductor device can be improved. According to the red, the present invention has at least the following advantages: 1. The trench filling method proposed by the present invention has good trench filling ability, and can solve the problem that the trench filling ability is poor due to the high aspect ratio of the trench. Problem 2. According to the method for manufacturing the shallow trench isolation structure proposed by the present invention, the profile of the shallow trench isolation structure can be effectively controlled, and the phenomenon of peeling of the high density plasma ruthenium oxide layer can be avoided. In the proposed manufacturing method of the shallow trench isolation structure, the hydrogen plasma treatment process and the high-density plasma chemical vapor deposition process are performed in the same reaction machine, thereby effectively simplifying the process and shortening the system 12 200837876 94031 22341 twf. Doc/n time. 4. The shallow trench isolation structure proposed by the present invention has a good trench filling capability, so that it can prevent the hole in the shallow trench isolation structure, and can improve the performance of the semiconductor component. The invention has been disclosed in the preferred embodiments as above, but it is intended to limit the invention to those skilled in the art, without departing from the scope of the invention. There are a few changes and retouchings. Therefore, the scope of the second aspect of the present invention is determined by the definition of the application of the P#. [Simplified Schematic] FIG. 1 is a cross section of a conventional shallow trench isolation structure. Fig. 2 is a flow chart showing a trench filling method according to an embodiment of the present invention. (4) A cross-sectional view showing a process of fabricating a shallow trench isolation, and a mouth structure according to the present invention. DESCRIPTION OF SYMBOLS 100,200: Substrate 102, 206 · Ditch 104, 212: shallow trench isolation structure 106, 208 · · Flowing oxidized oxide layer 108, 210: high-density plasma yttrium oxide layer 202 ·• pad oxide layer 204: mask layer S100 'S1G2' S104, S106: step number 13