TW200837456A - Light source apparatus and backlight module - Google Patents

Light source apparatus and backlight module Download PDF

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Publication number
TW200837456A
TW200837456A TW96147952A TW96147952A TW200837456A TW 200837456 A TW200837456 A TW 200837456A TW 96147952 A TW96147952 A TW 96147952A TW 96147952 A TW96147952 A TW 96147952A TW 200837456 A TW200837456 A TW 200837456A
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Taiwan
Prior art keywords
layer
light source
light
source device
cathode
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TW96147952A
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Chinese (zh)
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TWI418891B (en
Inventor
Yi-Ping Lin
Jung-Yu Li
Shih-Pu Chen
Wei-Chih Lin
Lian-Yi Cho
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Ind Tech Res Inst
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Priority to TW96147952A priority Critical patent/TWI418891B/en
Priority to JP2008048556A priority patent/JP2008218413A/en
Priority to KR1020080019310A priority patent/KR100945900B1/en
Priority to US12/039,751 priority patent/US7936118B2/en
Publication of TW200837456A publication Critical patent/TW200837456A/en
Priority to JP2011104213A priority patent/JP5413401B2/en
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Publication of TWI418891B publication Critical patent/TWI418891B/en

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    • Y02B20/202

Abstract

An apparatus of light source, which can be used to forma backlight module, includes a cathode structure, an anode structure, a fluorescent layer, a second electron generation layer, and a low-pressure gas layer. The fluorescent layer is located between the cathode structure and the anode structure. The low-pressure gas layer is filled between the cathode structure and the anode structure. The second electron generation layer can generate second electrons to hit the fluorescent layer for improving the performance of the light source.

Description

200837456 P55950136TWC2 23180-2twf.doc/n 九、發明說明: 【發明所屬之技術領域】 本發明是有關於-種光源裝置,且特別是有關於一種 可用於液晶背光模組的平面光源裝置。 【先前技術】 在日常生財絲裝置較用㈣叙。傳統的光源 褒置例如燈泡是藉由燈絲於通錢由於高溫而產生可見光 式之光源基本上是點狀的。後續管狀之光源 也接者被!X展出來。經過長時_研發與改變,平面光源 的裝置亦被提出,並廣泛使用於平面顯示器上。 Ο ϋ 而射出。於此’電極結構1〇〇是出光面,其一般是採用由 玻璃基板以及麵锡氧化物(IT〇)的透明導電層所組成的透 光材料。 有許夕種機制可產生光源。圖u會示傳統平面光源裝 置機制的剖面示意圖。請參關!,此發光機制是藉二電 ,結構100、102與電源106連接,在—操作電壓下產生電 %,亚利用氣體放電,又稱為電襞放電(pia酿版㈣幻 方式促使氣體104被游離以產生電子11〇。電子n〇被電 場加速且撞擊到在電極結構搬上對應紅、綠、藍的榮光 層108a、108b、l〇8c。由於榮光層的作用產生可見光112 另種光源的產生機制是場發射(Field Emission)機制 如f 2所不。圖2繪示另一傳統平面光源裝置機制的剖面 不意圖。傳統平面光源裝置包括一玻璃基板120、一陰極 5 200837456 P55950136TWC2 23180-2twf.doc/n 結構層122、多個圓錐形導電體124、一閘層126、一陽極 結構層128與一螢光層130。陰極結構層122設置在玻璃 基板120上。在陰極結構層122上設置有多個圓錐形導電 體124。在圓錐形導電體124上設置有一閘層i26(Gate layer)。在閘層126上對應圓錐形導電體124有多個孔洞。 陽極結構層128有透明陽極層設置在一玻璃基板上。另BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light source device, and more particularly to a planar light source device that can be used in a liquid crystal backlight module. [Prior Art] In the daily life of the financial device is used (four). Conventional light sources, such as light bulbs, are substantially point-like by the filaments that generate visible light due to high temperatures. The subsequent tubular light source is also picked up! X is on display. After a long period of development and change, a planar light source device has also been proposed and widely used on flat panel displays. Ο ϋ and shoot. Here, the electrode structure 1 is a light-emitting surface, which is generally a light-transmitting material composed of a glass substrate and a transparent conductive layer of tin oxide (IT〇). There are many kinds of mechanisms that can produce light sources. Figure u shows a schematic cross-sectional view of a conventional planar light source device mechanism. Please participate! The illuminating mechanism is by the second electric power, the structures 100, 102 are connected with the power source 106, and generate electricity at the operating voltage, and the gas is discharged by the gas, which is also called electric discharge (the pia brewing plate (four) phantom mode causes the gas 104 to be freed. To generate electrons 11. The electrons n〇 are accelerated by the electric field and impinge on the glare layers 108a, 108b, l8c corresponding to red, green and blue on the electrode structure. The visible light 112 is generated by the action of the glory layer. The mechanism is a field Emission mechanism such as f 2 . Figure 2 illustrates a cross-sectional view of another conventional planar light source device mechanism. The conventional planar light source device includes a glass substrate 120, a cathode 5 200837456 P55950136TWC2 23180-2twf. The doc/n structure layer 122, the plurality of conical conductors 124, a gate layer 126, an anode structure layer 128 and a phosphor layer 130. The cathode structure layer 122 is disposed on the glass substrate 120. The cathode structure layer 122 is disposed on the cathode structure layer 122. There are a plurality of conical conductors 124. A gate layer i26 (Gate layer) is disposed on the conical conductor 124. The conical conductor 124 has a plurality of holes on the gate layer 126. The anode structure layer 128 has a transparent anode Layer disposed on a glass substrate. Another

外,螢光層130設置在陽極結構層128上。藉由陰陽極之 間的高電場使電子132從圓錐形導電體124的尖端逸出, 經電場加速後撞擊在螢光層130上使其發出可見光。 上述兩種傳統發光機制各有優缺點。氣體放電的方式 容易產生且結構簡單,但是缺點是其過程需要產生電漿^ 此很耗電。場發射的光源是冷光源的一種,其原理類似因 極射線官(CRT),藉由陰陽極之間的高電場使電子由陰極 逸,,之後撞擊在塗佈於陽極上的螢光粉使其發亮。其優 點是亮度高且較省電,又容易做成平面結構,而缺點^ 在陰極上成長或塗佈均勻的發师missiGn)材料,例如 形成有針狀(spindle)結構,或是要使用奈米碳管。^ 光燈需要利用支架將陰陽極隔開,同時需要仔细 ^ I陰1%極之間的垂直距離。由於可容許誤差卵 ==應用上將增加許多結構設計與良率的成本^量在i —X光冗度的均勻性也很難控制。另外,直 ^ 問題之一。 一二的封裝也是 【發明内容】 200837456 P55950136TWC2 23180-2twf.doc/n 本發明提供一種光源裝置,可在無須 办 度下容易地製造成-平面光源,並且具真: 效率,且可以在較低工作電壓運作。乂儿又,、發光 成。本發明提供_被光賴組,是彻上述光源裳置達 f發明提出-種光源裝置,包括:_陰極結構, ^ ’做為一出光面。一陽極結構,位於陰極結構對 ^ ’具有光^特性。-螢光層位於陰極結構與陽極結構 之間:-低壓氣體層,填充於陰極結構與陽極結構 而低壓氣體層具有料陰極均勻發射電子的作用。 壓氣體層有—大的電子平均自由路徑,允許電子在二作 電壓下可直接撞擊該螢光層,以產生所要的光。’、In addition, the phosphor layer 130 is disposed on the anode structure layer 128. The electrons 132 escape from the tip end of the conical conductor 124 by a high electric field between the anode and the cathode, and are accelerated by the electric field to impinge on the phosphor layer 130 to emit visible light. The above two conventional illumination mechanisms each have advantages and disadvantages. The way the gas is discharged is easy to produce and the structure is simple, but the disadvantage is that the process needs to generate plasma, which is very power-hungry. The light source of the field emission is a kind of cold light source, and the principle is similar to that of the polar ray officer (CRT), which causes electrons to escape from the cathode by a high electric field between the anode and cathode, and then impinges on the phosphor powder coated on the anode. It shines. The advantage is that the brightness is high and the power is saved, and it is easy to be made into a planar structure, and the disadvantage is that the material that grows or coats uniformly on the cathode, such as a needle structure, or a nephew. Carbon tube. ^ Lights need to be separated by a bracket, and the vertical distance between the 1% poles needs to be carefully taken. Since the allowable error egg == application will increase the cost of many structural designs and yields. The uniformity of the i-X light redundancy is also difficult to control. Also, one of the straight ^ questions. The package of one or two is also [invention] 200837456 P55950136TWC2 23180-2twf.doc/n The present invention provides a light source device which can be easily fabricated into a planar light source without the need of degree, and has a true efficiency and can be lower The working voltage operates. The children are, and they shine. The present invention provides a light source device, which is a light source device, comprising: a cathode structure, ^' as a light-emitting surface. An anode structure having a photo-characteristic of the cathode structure pair ^'. The phosphor layer is located between the cathode structure and the anode structure: - a low pressure gas layer filled in the cathode structure and the anode structure and the low pressure gas layer having the function of uniformly emitting electrons from the cathode. The pressurized gas layer has a large electron mean free path that allows electrons to strike the phosphor layer directly at two voltages to produce the desired light. ’,

CC

本發明又提出-種光源裝置,包括陰極結構, 先特性;-陽極結構,餅陰極結構對向,具有透光特性。 一放電層位於陰極結構與陽極結構的至少其中之一上。一 螢光層位於陰減構與陽極結歡m氣體層 充於陰極結構與陽極結構之間,且低㈣體層具 险 _勾發職子侧。健氣體層有—大的電子平均自: 路控,使電子在-操作電壓下可直接撞軸$光層。 本發明又提出-種_種背光源裝置,包括至少 =器’提供至少—操作電壓;以及-發光單元,包括至/少' —發光面板,該發光面板受該操作電壓控制。其令該 =板包括·陰極結構;_陽極結構,位於該陰極結構對 。,一螢光層,位於該陰極結構與該陽極結構之間;以及 7 200837456 P55950136TWC2 23180-2twf.doc/n 一低壓氣體層,填充於該陰極結構盥 士 低壓氣體層具有誘導陰極均句發射電;的作;冓 壓氣體層有-大的電子平均自由路徑,使電二:低 壓下可直接撞擊該螢光層。 彳呆作電 為讓本發明之上述特徵和優點能更明顯易懂, 舉較佳實闕’並配合所關式,作詳細制如下。、The invention further proposes a light source device comprising a cathode structure, a first characteristic; an anode structure, a pie cathode structure facing, having a light transmitting property. A discharge layer is on at least one of the cathode structure and the anode structure. A phosphor layer is located between the negative structure and the anode junction, and the gas layer is filled between the cathode structure and the anode structure, and the low (four) body layer is dangerous. The health gas layer has a large electron average: from the road control, the electron can directly hit the axis of the light layer under the operating voltage. The invention further provides a backlight device comprising at least a device providing at least an operating voltage; and - a lighting unit comprising, to/or a light emitting panel, the light emitting panel being controlled by the operating voltage. It is such that the = plate comprises a cathode structure; an anode structure is located in the cathode structure pair. a phosphor layer between the cathode structure and the anode structure; and 7 200837456 P55950136TWC2 23180-2twf.doc/n a low pressure gas layer filled in the cathode structure of the gentleman low pressure gas layer having induced cathode uniform emission ; the work; the pressure gas layer has a large electron mean free path, so that the second: low pressure can directly hit the phosphor layer.上述 作 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为 为,

i) 【實施方式】 以下舉-些實施例,用以舉例說明本發明的特徵 是本發明不受限於所舉的這些實施例。 1 一 篇一實施例 _立圖3所緣示是根據本發明—實施例之光源裝置的剖面 不思圖。请芩閱圖3,光源裝置包括一陰極結構3〇2&、— 陽極結構304a、-螢光層3〇6、一二次電子產生層3〇8斑 一低壓氣體層310。 、陰極結構302a的材質為玻璃基板上蒸鍍金屬層或透 ,導電材料。陽極結構304a位於陰極結構302a的對向。 陽極結構304a為透光結構,其材質例如是銦錫氧化物 (ITO)、氟摻雜氧化錫(FT0)或其他透明導電氧化層 (TC0)材料。陰極結構302a與陽極結構304a基本上例 如可以包括一基板以及基板上的電極層。陰極結構3〇2& 與陽極結構304a之實際結構可以依實際設計而變化,此為 一般習此技藝者可以瞭解,在此不繼續描述。 螢光層306配置在陰極結構302a與陽極結構3〇4a之 8 200837456 P55950136TWC2 23180-2twf.doc/n 間’一般例如配置在陽極結構304a上。 二次電子產生層308配置在陰極結構302a上。二次電 子產生層308的材料可以是氧化鎂(MgO)、氧化铽 (Tb203)、氧化鑭(La2〇3)或氧化鈽(Ce〇2)等。 低壓氣體層310配置在陰極結構302與陽極結構304 之間’其中填入低壓氣體,例如是在8ΧΠΤ1〜lxur3 torr的 範圍内’其例如使電子平均自由路徑約大於5 mm °i) [Embodiment] The following examples are given to illustrate the features of the present invention. The present invention is not limited to the embodiments. 1 - An embodiment FIG. 3 is a cross-sectional view of a light source device according to an embodiment of the present invention. Referring to FIG. 3, the light source device includes a cathode structure 3〇2&, an anode structure 304a, a phosphor layer 3〇6, a secondary electron generating layer 3〇8 spot, and a low pressure gas layer 310. The material of the cathode structure 302a is a vapor-deposited metal layer or a transparent conductive material on the glass substrate. The anode structure 304a is located opposite the cathode structure 302a. The anode structure 304a is a light transmitting structure made of, for example, indium tin oxide (ITO), fluorine-doped tin oxide (FT0) or other transparent conductive oxide layer (TC0) material. Cathode structure 302a and anode structure 304a can, for example, comprise a substrate and an electrode layer on the substrate. The actual structure of the cathode structure 3〇2& and the anode structure 304a may vary depending on the actual design, as will be understood by those skilled in the art, and the description will not be continued here. The phosphor layer 306 is disposed between the cathode structure 302a and the anode structure 3〇4a 8 200837456 P55950136TWC2 23180-2twf.doc/n, which is generally disposed, for example, on the anode structure 304a. The secondary electron generating layer 308 is disposed on the cathode structure 302a. The material of the secondary electron generating layer 308 may be magnesium oxide (MgO), yttrium oxide (Tb203), lanthanum oxide (La2〇3) or cerium oxide (Ce〇2). The low-pressure gas layer 310 is disposed between the cathode structure 302 and the anode structure 304, wherein a low-pressure gas is filled, for example, in the range of 8ΧΠΤ1 to lxur3 torr, which for example makes the electron mean free path greater than about 5 mm °

(J 在一實施例中,圖3所示之光源裝置更包括一邊壁結 構312,其將陰極結構302a與陽極結構3〇4a隔離一距離, 同時也封閉出低壓氣體層31〇,以填入低壓氣體。 本發明實施例利用稀薄氣體使電子輕易導出以均勻產 生足夠量的電子320,又利用場發射的機制,允許被游離 的電子320撞擊螢光層〜u 丁災曰 …压土厂/|文tf、j凡。田 體中有游離的正離子322會撞擊二次電子產生層3〇8,當 正離子撞擊二次電子產生層時可產生辦的二次電子 324來撞擊螢光層3〇6進而增加發光效率。 在本實施例中,陽極結構3〇4a是透光結構,因此,當 迅子32〇撞擊螢光層3〇6時,所產生的光MO會穿過陽極 ,構304a,此種光源裝置又稱為穿透式光源裝置。此外, 3透陰極結構3〇2a可為具有高反射性的 孟屬其南反射率並增加紐與發光效率。 要n ’所填人的氣體是用來誘導陰極均勾 ’因此選用的氣體無特殊需求, 體或混合氣體。使用的氣體例如大氣(at_pherie屻、= 9 200837456 P55950136TWC2 23180-2twf.doc/n (He)、氖(Ne)、氬(Ar)、氪(Kr)、氤(Xe)、 氫(¾)、二氧化碳(c〇2)等。由於填入的氣體是屬低〜 中度真空,因此其平均電子自由路徑足夠大,使電子在電 場下可直接撞擊螢光層306的材料上,以發出所要的光。 圖3之實施例可以另一形式來實施,如圖4所示。圖 4所緣示是根據本發明一實施例之光源裝置的剖面示意 圖。請參閱圖4,光源裝置包括一陰極結構3〇2b、一陽^ 結構304b、一螢光層306、一二次電子產生層3〇8、一低 壓氣體層310、一邊壁結構312與一反射層314。 圖4所示之光源裝置是類似於與圖3所示之光源裝 置。兩者不同之處在於,圖4所示的光源裝置更包括一反 射層314 ’其配置在知極結構304b與榮光層306之間。再 者’陰極結構302b是透光結構,其材質例如是銦錫氧化 物、氟摻雜氧化錫或其他透明導電氧化層材料。陽極結構 304b為可透光或不透光的材料。 當利用氣體放電機制所產生的電子320以及正離子 Ο 322撞擊二次電子產生層308所產生額外的二次電子324 撞擊螢光層306時,所產生的光330會由反射層314反射 穿過陰極結構302b,此種光源裝置又稱為反射式光源裝 置。此外,在反射式光源裝置中,陽極結構3〇4b為玻璃上 蒸鍍透明導電材料,而反射層314可為高反射性的金屬或 高反射金屬蒸鍍高反射光學膜,其可提高反射率並增加亮 度與發光效率。 200837456 P5595013 6TWC2 23180-2twf.doc/n 第二實施例 圖5所緣示是根據本發明—實施例之光源裝置的 示意圖。請參閱圖5,錢裝置包括一陰極結構恤、一 陽極結構404a、一螢光層406、一放帝层Λ 體層·。 放甩層嶺與-低壓氣 陰極結構術的材質為麵基板上聽金屬層或透 明導電材料。陽極結構404a位於陰極結構4〇2&(J) In one embodiment, the light source device shown in FIG. 3 further includes a side wall structure 312 that isolates the cathode structure 302a from the anode structure 3〇4a by a distance while also enclosing the low pressure gas layer 31〇 for filling The low-pressure gas. The embodiment of the present invention utilizes a rare gas to easily lead electrons to uniformly generate a sufficient amount of electrons 320, and utilizes a field emission mechanism to allow the free electrons 320 to strike the phosphor layer. |文tf,j凡.The free positive ions 322 in the field will impact the secondary electron generating layer 3〇8, when the positive ions hit the secondary electron generating layer, the secondary electrons 324 can be generated to hit the fluorescent layer. In the present embodiment, the anode structure 3〇4a is a light transmitting structure, and therefore, when the spurs 32 〇 strike the phosphor layer 3〇6, the generated light MO passes through the anode. The light source device is also referred to as a transmissive light source device. In addition, the 3 through-cathode structure 3〇2a can be a highly reflective Monzonian south reflectance and increase the luminous efficiency and luminous efficiency. Human gas is used to induce the cathode to be hooked' The gas used has no special requirements, body or mixed gas. The gas used is for example atmospheric (at_pherie屻, = 9 200837456 P55950136TWC2 23180-2twf.doc/n (He), neon (Ne), argon (Ar), antimony (Kr) , Xenon (Xe), Hydrogen (3⁄4), Carbon dioxide (c〇2), etc. Since the gas to be filled is a low to moderate vacuum, the average electron free path is large enough for the electron to directly hit the firefly under the electric field. The material of the optical layer 306 is used to emit the desired light. The embodiment of Fig. 3 can be implemented in another form, as shown in Fig. 4. Fig. 4 is a schematic cross-sectional view of a light source device in accordance with an embodiment of the present invention. Referring to FIG. 4, the light source device includes a cathode structure 3〇2b, a positive structure 304b, a phosphor layer 306, a secondary electron generating layer 3〇8, a low pressure gas layer 310, a side wall structure 312 and a reflective layer. 314. The light source device shown in Fig. 4 is similar to the light source device shown in Fig. 3. The difference is that the light source device shown in Fig. 4 further includes a reflective layer 314' which is disposed in the well structure 304b and Between the glory layers 306. Further, the cathode structure 302b is a light transmitting structure. The material is, for example, indium tin oxide, fluorine-doped tin oxide or other transparent conductive oxide layer material. The anode structure 304b is a material that is transparent or opaque. When the gas 320 is generated by a gas discharge mechanism and a positive ion Ο When the 322 impacts the secondary electron generating layer 308 to generate additional secondary electrons 324 to strike the phosphor layer 306, the generated light 330 is reflected by the reflective layer 314 through the cathode structure 302b, which is also referred to as a reflective light source. In addition, in the reflective light source device, the anode structure 3〇4b is a transparent conductive material evaporated on the glass, and the reflective layer 314 can be a highly reflective metal or a highly reflective metal evaporated high reflective optical film, which can be improved. Reflectivity and increase brightness and luminous efficiency. 200837456 P5595013 6TWC2 23180-2twf.doc/n Second Embodiment FIG. 5 is a schematic view showing a light source device according to an embodiment of the present invention. Referring to FIG. 5, the money device comprises a cathode structure shirt, an anode structure 404a, a phosphor layer 406, and a discharge layer. The material of the sputum layer and the low pressure gas cathode structure is a metal layer or a transparent conductive material on the surface substrate. The anode structure 404a is located at the cathode structure 4〇2&

i) 陽極結構释為透光結構’其材質例如是銦錫氧化物°、氟 摻雜氧化錫或其他透明導電氧化層㈣。陰極結構術& 與陽極結構404a基本上例如可以包括—基板以及基板上 的電極層。陰極結構402a與陽極結構4〇4a之實際結構可 以依實際設計而變化’ J:匕為一般習此技藝者可以瞭解,在 此不繼續描述。 螢光層406配置在陰極結構4〇2a與陽極結構4〇如之 間,一般例如配置在陽極結構4〇4a上。 放電層408配置在陰極結構4〇2a上。放電層408的 ,料可以是金屬、奈米碳管、奈米碳壁、奈米碳材、柱狀 氧化鋅(ZnO)、氧化辞薄膜等易放電材料。 低壓氣體層410配置在陰極結構4〇2a與陽極結構 404a之間,其中填入低壓氣體,例如是在8χ1(Γι〜1χ1〇_3 _ 的範圍内,其例如使電子平均自由路徑約大於5mm。 在一實施例中,光源裝置更包括一邊壁結構412,其 將陰極結構402a與陽極結構404a隔離一距離,同時也封 閉出低壓氣體層410,以填入低壓氣體。 11 200837456 P55950136TWC2 23180-2twf.doc/n 曰本發明利用稀薄氣體使電子輕易導出,均勻產生足夠 里的電子420,又利用焉電壓,允許被游離的電子42〇撞 擊螢光層概’以產生所要的光。在本實施例中,由於放 電層408是易放電材料,所以可降低工作電壓。i) The anode structure is released as a light-transmitting structure. The material is, for example, indium tin oxide, fluorine-doped tin oxide or other transparent conductive oxide layer (4). The cathode structure & and the anode structure 404a may, for example, comprise, for example, a substrate and an electrode layer on the substrate. The actual structure of the cathode structure 402a and the anode structure 4A4a may vary depending on the actual design. J: 匕 is generally understood by those skilled in the art and will not be described here. The phosphor layer 406 is disposed between the cathode structure 4〇2a and the anode structure 4, for example, and is disposed, for example, on the anode structure 4〇4a. The discharge layer 408 is disposed on the cathode structure 4〇2a. The material of the discharge layer 408 may be a metal, a carbon nanotube, a nanocarbon wall, a nano carbon material, a columnar zinc oxide (ZnO), an oxide film or the like. The low-pressure gas layer 410 is disposed between the cathode structure 4〇2a and the anode structure 404a, and is filled with a low-pressure gas, for example, in the range of 8χ1 (Γι~1χ1〇_3 _, which, for example, makes the electron mean free path greater than about 5 mm In one embodiment, the light source device further includes a side wall structure 412 that isolates the cathode structure 402a from the anode structure 404a while also enclosing the low pressure gas layer 410 to fill the low pressure gas. 11 200837456 P55950136TWC2 23180-2twf .doc/n 曰 The present invention utilizes a thin gas to easily conduct electrons, uniformly generate enough electrons 420, and utilizes a krypton voltage to allow the free electrons 42 to impinge on the phosphor layer to produce the desired light. In the example, since the discharge layer 408 is a dischargeable material, the operating voltage can be lowered.

ί) 在本實施例中,陽極結構404a是透光結構,其材質 例如是銦錫氧化物、氟摻雜氧化錫或其他透明導電氧化層 材料。因此,當電子420撞擊螢光層4〇6時,所產生的光 43〇會穿過陽極結構4〇4a,此種光源裝置又稱為穿 源裝置。此外’在穿透式光源裝置中,陰極結構條可 2較佳冑反雜的金屬,討提冑反料並增加亮度盘 +要注意的是’所填入的氣體是用來誘導陰極均 =子之用’因此選用的氣體無特殊需求,可叹各“ 或混合氣體。使用的氣體例如大氣、氦、氖、氬二體 ,、二氧化碳等。由於填人的氣體是中〜低度直空,^ =均電子自由路徑料大,使電子在電場 ^ 匕擊榮光層槪的材料上,以發出所要的光。了直接 圖5之實施例可以另一形式來實施,如 6所緣示是根據本發明—實施例之光㈣置 :圖6所示光源裝置之結構與功能是 。 源裝置之結構與魏,因此不再域_ f =不光 圖6之光源裝置與圖5之光源袭 / 1圖6, _配置在陽極結構咖與螢料槪之=在於’放電層 圖5之實施例可以另一形式來實施,如圖7所示。圖 12 200837456 P55950136TWC2 23180-2twf.doc/n 7所繪示是根據本發明一實施例之光源裝置的剖面示意 圖。圖7所示光源裝置之結構與功能是類似於圖5所示光 源裝置之結構與功能,因此不再重複說明。請參閱圖7, 圖7之光源裝置與圖5之光源裝置不同之處在於,放電層 408分別配置在陰極結構4〇2a上以及陽極結構404a與螢 光層406之間。 圖5之實施例可以另一形式來實施,如圖8所示。圖 8所繪示是根據本發明一實施例之光源裝置的剖面示意 圖。請參閱圖8,光源裝置包括一陰極結構4〇沈、一陽極 結構404b、一螢光層406、一放電層408、一低壓氣體層 410、一邊壁結構412與一反射層414。 圖8所不之光源裝置是類似於與圖5所示之光源裝 置。兩者不同之處在於,圖8所示的光源裝置更包括一反 射層414,其配置在陽極結構層上。再者,陰極結構4〇2b 是透光結構,其材質例如是銦錫氧化物、氟摻雜氧化錫或 其他透明導電乳化層材料。陽極結構4〇4b為可透光或不透 ϋ 光的材料。 當電子420撞擊螢光層4〇6時,所產生的光43〇會由 反射層414反射牙過陰極結構402b,此種光源裝置又稱為 反射式光源裝置。在反射式光源裝置中,陽極結構4〇4b 較佳為具有高反射性的金屬,其可提高反射率並增加亮度 與發光效率。 圖8之實施例可以另-形式來實施,如圖9所示。圖 9所繪示是根據本發明一實施例之光源裴置的剖面示意 13 200837456 P55950136TWC2 23180-2twf.doc/n 圖。圖9所不光源裝置之結構與功能是類似於圖8所示光 源裝置之結構與功能,因此不再重複說明。請參閱圖9, 圖9之光源裝置與圖8之光源裝置不同之處在於,放電層 408配置在反射層414與螢光層406之間。 圖8之實施例可以另一形式來實施,如圖1〇所示。 圖10所繪示是根據本發明一實施例之光源裝置的剖面示 意圖。在本實施例中,圖10所示光源裝置之結構與功能是 類似於圖8所示光源裝置之結構與功能,因此不再重複說 明。凊參閱圖10,圖10之光源裝置與圖8之光源裝置不 同之處在於’放電層408分別配置在陰極結構402b上以及 反射層414與螢光層406之間。 “前述的一些實施例,如果有配合光反射的機制,因此 出光面是單面。然而,如果不採用光反射的機制,則當選 擇陰極結構與陽極結構例如都藉由透明導電材料,達成二 者都是光穿透的特性,則可以達到雙面出光的效果。雖然 光,度較弱,但是出光面是雙面。而如果在任一出光面'的 ϋ 外部加設一反射層,也可以改變成單一出光面。例如,透 明基板的-面是透明電極結構,另一面設置有反射層 如是蒸鍍金屬反射層。 ,一步而言,利用上述的光源裝置可以製作成顯示器 =的背光模組。圖11繪示依據本發明實施例,一背光模組 結,不意圖。參閱圖u,本發明實施例的背光模組是架構 在則述的發光裝置上所組成的發光面板1100,其操作電壓 14 200837456 P55950136TWC2 23180-2twf.doc/n 由電源控制ϋ 11G2來提供。另外,例如也M再货加 熱機構1104 ’設置在發光面板議的背後。由^本發^ 的發光裝置容練成大面積的平面光源,因此,相對丄 化背光模組的結構與操作,且增加發光效率。 另外依據背光模組的需要,可以再增加—片增亮膜 (BEF,Brightness Enhance Film)或是反射式增曰亮^In the present embodiment, the anode structure 404a is a light transmitting structure made of, for example, indium tin oxide, fluorine-doped tin oxide or other transparent conductive oxide layer material. Therefore, when the electrons 420 strike the phosphor layer 4〇6, the generated light 43〇 passes through the anode structure 4〇4a, which is also referred to as a penetrating device. In addition, in the transmissive light source device, the cathode structure strip can be better than the anti-heterogeneous metal, so as to increase the brightness of the disc and note that the 'filled gas is used to induce the cathode. The use of the gas 'There is no special demand for the gas, sigh each " or mixed gas. The gases used such as the atmosphere, helium, neon, argon, carbon dioxide, etc.. Because the filling gas is medium ~ low direct air , ^ = the average electron free path material is large, so that the electrons are on the material of the electric field ^ slamming the glory layer to emit the desired light. The embodiment of Fig. 5 can be implemented in another form, as shown by the 6 Light (four) according to the present invention - the structure and function of the light source device shown in Fig. 6 is: the structure of the source device and Wei, so no longer the domain _ f = not the light source device of Figure 6 and the light source of Figure 5 / 1 Figure 6, _ arranged in the anode structure coffee and the 槪 = = in the 'discharge layer' Figure 5 embodiment can be implemented in another form, as shown in Figure 7. Figure 12 200837456 P55950136TWC2 23180-2twf.doc/n 7 Illustrated is a cross-sectional view of a light source device according to an embodiment of the invention The structure and function of the light source device shown in FIG. 7 are similar to the structure and function of the light source device shown in FIG. 5, and therefore will not be repeatedly described. Referring to FIG. 7, the light source device of FIG. 7 is different from the light source device of FIG. The discharge layer 408 is disposed on the cathode structure 4〇2a and between the anode structure 404a and the phosphor layer 406. The embodiment of Fig. 5 can be implemented in another form, as shown in Fig. 8. A schematic diagram of a light source device according to an embodiment of the present invention. Referring to FIG. 8, the light source device includes a cathode structure 4, an anode structure 404b, a phosphor layer 406, a discharge layer 408, and a low pressure gas layer 410. a side wall structure 412 and a reflective layer 414. The light source device shown in Fig. 8 is similar to the light source device shown in Fig. 5. The difference is that the light source device shown in Fig. 8 further includes a reflective layer 414. Further, the cathode structure 4〇2b is a light transmitting structure, and the material thereof is, for example, indium tin oxide, fluorine-doped tin oxide or other transparent conductive emulsified layer material. The anode structure 4〇4b is Light transmissive or impervious When the electron 420 strikes the phosphor layer 4〇6, the generated light 43〇 is reflected by the reflective layer 414 over the cathode structure 402b, which is also referred to as a reflective light source device. The anode structure 4〇4b is preferably a highly reflective metal which improves reflectivity and increases brightness and luminous efficiency. The embodiment of Fig. 8 can be implemented in another form, as shown in Fig. 9. Illustrated is a cross-sectional schematic of a light source device according to an embodiment of the present invention. 13 200837456 P55950136TWC2 23180-2twf.doc/n. The structure and function of the non-light source device of FIG. 9 is similar to the structure of the light source device shown in FIG. Function, so the description is not repeated. Referring to FIG. 9, the light source device of FIG. 9 is different from the light source device of FIG. 8 in that the discharge layer 408 is disposed between the reflective layer 414 and the phosphor layer 406. The embodiment of Figure 8 can be implemented in another form, as shown in Figure 1A. Fig. 10 is a cross-sectional view showing a light source device according to an embodiment of the present invention. In the present embodiment, the structure and function of the light source device shown in Fig. 10 are similar to those of the light source device shown in Fig. 8, and therefore will not be repeatedly described. Referring to Fig. 10, the light source device of Fig. 10 is different from the light source device of Fig. 8 in that the 'discharge layer 408 is disposed on the cathode structure 402b and between the reflective layer 414 and the phosphor layer 406, respectively. "Some of the foregoing embodiments have a light-emitting surface that is single-sided if there is a mechanism to cooperate with light reflection. However, if a mechanism of light reflection is not employed, when the cathode structure and the anode structure are selected, for example, by a transparent conductive material, Both are light-transmitting characteristics, which can achieve double-sided light output. Although the light is weak, the light-emitting surface is double-sided. If a reflective layer is added to the outer surface of any light-emitting surface, For example, the surface of the transparent substrate is a transparent electrode structure, and the other surface is provided with a reflective layer such as a vapor-deposited metal reflective layer. In one step, the backlight module can be fabricated as a display using the above-mentioned light source device. FIG. 11 illustrates a backlight module in accordance with an embodiment of the present invention. Referring to FIG. 5, the backlight module of the embodiment of the present invention is a light-emitting panel 1100 constructed on the light-emitting device described above, and operates. Voltage 14 200837456 P55950136TWC2 23180-2twf.doc/n is provided by power control ϋ 11G2. In addition, for example, M reheating mechanism 1104 ' is set on the back of the illuminated panel The light-emitting device of the present invention is capable of being processed into a large-area planar light source, and therefore, the structure and operation of the backlighting module are relatively increased, and the luminous efficiency is increased. In addition, according to the needs of the backlight module, the increase can be increased. Bright Film Enhancement (BEF, Brightness Enhance Film) or Reflective Enhancement

u 一⑽EF,Duai BEF,以增加光的方向性與亮度。圖12繪 不依據本發明實施例,另一背光模組結構示意圖。以圖Η 的結構為基礎’例如在發光面板11〇〇的出光面設置增亮光 學膜1106。增亮光學膜11〇6例如包括BEF或是dbef。 另外,如果需要的話可以再增加其他的光學膜片,其例如 在置增亮光學膜1106與發光面板1100之間再增加一擴散 模組,使發光強度均勻。 曰 上述實施例的發光模組是以單一發光面板所形成 的。然而,發光模組也可以是由多個發光面板單元組成陣 列結構。圖13繪示依據本發明實施例,另一背光模組結構 示意圖。參閱圖13,發光模組hoi例如是由多個發光面 板單元1100a、1100b、1100c···所組成,其更例如是以陣 列方式組成。分別的發光面板單元ll〇〇a、HOOb、ll〇〇c 例如可由不同的電源控制器ll〇2a、n〇2b、ll〇2c···所控 制。於此實施例,由於光源是多個發光面板單元所組成, 原始的發光強度會不均勻,因此配合擴散模組11〇8的使 用,使光源混合均勻。接著再利用增亮光學膜1106,使擴 散的光盡量往出光面射出,提高光亮度。 15 200837456 P55950136TWC2 23180-2twf.doc/n 另外,為增加發光強度,例如也可以利用多個發光面 板單元堆疊而成。另外,當做為背光模組使用時,為了有 單一出光面,例如在最外背面可以形成一反射面,更例如 利用電極本身達成或是另增一反射層達到反射效果。 综上所述,本發明第一實施例所提出的光源裝置具有 二次電子產生層。由於在氣體中有游離的正離子會撞擊陰 極,因此當正離子撞擊陰極結構上的二次電子產生層時可 產生額外的二次電子進而增加發光效率。 本發明第二實施例所提出的光源装置在其陰極結構 與陽極結構上皆可配置放電層來降低工作電壓。 本發明第三實施例,利用上述的實施例組成背光模 組,以提升背光模組的效能。 本發明之光源裝置可應用於液晶顯示(liquid crystal display,LCD)背光模組上。此光源裝置可增加發光強度與 發光均勻性’並且進而省略使用冷陰極螢光燈(C〇id Cathode Fluorescence Lamp, CCFL)所需之導光板與擴散片 等成本。本發明之光源裝置結合電漿與場發射兩種光源的 優點。本發明之光源裝置利用稀薄氣體誘導陰極均勻發射 電子特性,將電子從陰極結構中輕易導出,此可避免場發 射光源陰極製作困難的缺點。 本發明之光源裝置乃針對目前之個人電腦、家用電 視、車用電視或其他相關用途之薄型LCD背光模組用途之 裔件’此種形式之場發射發光裝置具有節省能、響應時間 短、局發光效率、容易製造、環保(不含果)等優點。 16 200837456 P55950136TWC2 23180-2twf.doc/n 相較於傳統之場發射光源裝置,本發明之光源裝置因 陰極結構只需為平面金屬或導電薄膜結構,不需特別處 理,也可不配置任何材料,所以結構較為簡單。再者,本 發明不需進行高真空封裝,可簡化生產製程並有利於大面 積生產。穿透式結構中之陰極金屬結構/高反射材料與反射 式結構中之陽極金屬結構/高反射材料將可提高反射率並 增加亮度與發光效率。 本發明所發出的光波長視螢光粉種類而定,可因應照 明或顯示器等不同用途設計不同波長範圍的光源或背光^ 組。本發明可設計平面或曲面型的背光模組。在本發明中, 反射式之反射層可避免光導現象,進而增加亮度與發光效 率,若配合接地的電路設計,還可消除螢光粉中的^荷累 積。 ’、 雖然本發明已以較佳實施例揭露如上,然其並非用以 限定本發明,任何所屬技術領域中具有通常知識者,在 脫離本發明之精神和範圍内,當可作些許之更動與潤飾, ^ 因此本發明之保護範圍當視後附之申請專利範圍所界定者 為準。 【圖式簡單說明】 圖1繪示傳統平面光源裝置機制的剖面示意圖。 圖2繪示另一傳統平面光源裝置機制的剖面示意圖。 圖3纷示根據本發明一實施例之光源裝置的剖面示音 17 200837456 P55950136TWC2 23180-2twf.doc/n 置的剖面示意 置的剖面示意 置的剖面示意 置的剖面示意 圖4繪示根據本發明一實施例之光源裝 圖。 圖5繪示根據本發明一實施例之光源裝 圖。 圖6繪示根據本發明一實施例之光源裝 圖。 圖7繪示根據本發明一實施例之光源裝 圖0 Οu One (10) EF, Duai BEF to increase the directivity and brightness of light. FIG. 12 is a schematic structural view of another backlight module according to an embodiment of the invention. Based on the structure of the image ’, for example, a brightening optical film 1106 is provided on the light-emitting surface of the light-emitting panel 11A. The brightening optical film 11〇6 includes, for example, BEF or dbef. In addition, other optical films may be added if necessary, for example, a diffusion module is added between the brightness enhancing optical film 1106 and the light emitting panel 1100 to make the light intensity uniform. The light emitting module of the above embodiment is formed by a single light emitting panel. However, the light-emitting module may also be composed of a plurality of light-emitting panel units. FIG. 13 is a schematic diagram showing the structure of another backlight module according to an embodiment of the invention. Referring to Fig. 13, the light-emitting module hoi is composed of, for example, a plurality of light-emitting panel units 1100a, 1100b, 1100c, ..., which are further constituted, for example, in an array manner. The respective light-emitting panel units lla, HOOb, ll〇〇c can be controlled, for example, by different power supply controllers 〇2a, n〇2b, ll2c, . In this embodiment, since the light source is composed of a plurality of light-emitting panel units, the original luminous intensity may be uneven, so that the use of the diffusion module 11〇8 makes the light source mix uniformly. Then, the brightening optical film 1106 is used to cause the diffused light to be emitted as far as possible to the light-emitting surface, thereby improving the lightness. 15 200837456 P55950136TWC2 23180-2twf.doc/n In addition, in order to increase the luminous intensity, for example, a plurality of light-emitting panel units may be stacked. In addition, when used as a backlight module, in order to have a single light-emitting surface, for example, a reflective surface can be formed on the outermost surface, for example, by using the electrode itself or by adding a reflective layer to achieve a reflection effect. As described above, the light source device proposed in the first embodiment of the present invention has a secondary electron generating layer. Since free positive ions in the gas impinge on the cathode, additional secondary electrons are generated when the positive ions strike the secondary electron generating layer on the cathode structure to increase the luminous efficiency. The light source device of the second embodiment of the present invention can be configured with a discharge layer to reduce the operating voltage on both the cathode structure and the anode structure. In the third embodiment of the present invention, the backlight module is constructed by using the above embodiments to improve the performance of the backlight module. The light source device of the invention can be applied to a liquid crystal display (LCD) backlight module. This light source device can increase the luminous intensity and the uniformity of light emission' and further omits the cost of a light guide plate and a diffusion sheet required for the use of a cold cathode fluorescent lamp (CCFL). The light source device of the present invention combines the advantages of both plasma and field emission sources. The light source device of the present invention utilizes a rare gas to induce uniform emission electron characteristics of the cathode, and easily extracts electrons from the cathode structure, which can avoid the disadvantage that the field emission source cathode is difficult to manufacture. The light source device of the present invention is aimed at the current use of a thin LCD backlight module for personal computers, home televisions, car televisions or other related purposes. 'This type of field emission illuminating device has energy saving, short response time, and It has the advantages of luminous efficiency, easy manufacturing, and environmental protection (excluding fruit). 16 200837456 P55950136TWC2 23180-2twf.doc/n Compared with the conventional field emission light source device, the light source device of the present invention only needs to be a planar metal or conductive film structure because of the cathode structure, and no special treatment or any material is required. The structure is relatively simple. Furthermore, the present invention does not require high vacuum packaging, simplifies the production process and facilitates large area production. The cathode metal structure/highly reflective material in the transmissive structure and the anode metal structure/highly reflective material in the reflective structure will increase reflectivity and increase brightness and luminous efficiency. The wavelength of light emitted by the present invention depends on the type of phosphor powder, and light sources or backlights of different wavelength ranges can be designed for different purposes such as illumination or display. The invention can design a flat or curved backlight module. In the present invention, the reflective reflective layer can avoid the light guiding phenomenon, thereby increasing the brightness and luminous efficiency. If the circuit design is matched with the grounding, the accumulation in the fluorescent powder can be eliminated. The present invention has been disclosed in the above preferred embodiments. However, it is not intended to limit the invention, and any one of ordinary skill in the art can make a few changes. Retouching, ^ Therefore, the scope of protection of the present invention is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing the mechanism of a conventional planar light source device. 2 is a cross-sectional view showing the mechanism of another conventional planar light source device. 3 is a cross-sectional view of a light source device according to an embodiment of the present invention. 17200837456 P55950136TWC2 23180-2twf.doc/n is a cross-sectional view schematically showing a cross-sectional view schematically showing a cross-sectional view 4 showing a cross-sectional view according to the present invention. The light source assembly of the embodiment. FIG. 5 is a diagram of a light source assembly according to an embodiment of the invention. Figure 6 is a diagram of a light source assembly in accordance with an embodiment of the present invention. FIG. 7 is a diagram of a light source according to an embodiment of the invention. FIG.

圖8繪示根據本發明一實施例之光源裝置的剖面示咅 圖。 /、 圖9繪示根據本發明一實施例之光源裝置的剖面示咅 圖。 圖10繪示根據本發明一實施例之光源裝置的剖面示 意圖。 不 圖11繪示依據本發明實施例,一背光模組結構示意 圖。 圖12-13繪示依據本發明實施例,另一背光模組結構 示意圖。 【主要元件符號說明】 100、102 :電極結構 104 :氣體 106 :電源 l〇8a、l〇8b、108c :榮光層 18 200837456 P55950136TWC2 23180-2twf.doc/n 110 :電子 112:可見光 120 :玻璃基板 122:陰極結構層 124:圓錐形導電體 126 :閘層 128 :陽極結構層 130·.螢光層 r、 i 132 :電子 302a、302b :陰極結構 304a、304b :陽極結構 306 :螢光層 308 :二次電子產生層 310 :低壓氣體層 312 :邊壁結構 314 :反射層 G 320 :電子 322 :正離子 324 :二次電子 330 :光 402a、402b ··陰極結構 404a、404b :陽極結構 406 :螢光層 408 :放電層 19 200837456 P55950136TWC2 23180-2twf.doc/n 410 :低壓氣體層 412 ··邊壁結構 414 :反射層 420 :電子 430 :光 1100、110a、110b、110c :發光面板 1101 :發光模組 1102、1102a、1102b、1102c:電源控制器 1104 :散熱機構 1106 :增亮光學膜 1108 :擴散模組 L) 20Figure 8 is a cross-sectional view of a light source device in accordance with an embodiment of the present invention. Figure 9 is a cross-sectional view of a light source device in accordance with an embodiment of the present invention. Figure 10 is a cross-sectional view showing a light source device in accordance with an embodiment of the present invention. FIG. 11 is a schematic structural view of a backlight module according to an embodiment of the invention. 12-13 are schematic diagrams showing the structure of another backlight module according to an embodiment of the invention. [Main component symbol description] 100, 102: Electrode structure 104: Gas 106: Power supply l〇8a, l〇8b, 108c: Glory layer 18 200837456 P55950136TWC2 23180-2twf.doc/n 110: Electron 112: Visible light 120: Glass substrate 122: Cathode structure layer 124: Conical conductor 126: Gate layer 128: Anode structure layer 130. Phosphor layer r, i 132: Electrons 302a, 302b: Cathode structures 304a, 304b: Anode structure 306: Fluorescent layer 308 Secondary electron generating layer 310: low pressure gas layer 312: side wall structure 314: reflective layer G 320: electron 322: positive ion 324: secondary electron 330: light 402a, 402b · cathode structure 404a, 404b: anode structure 406 : luminescent layer 408 : discharge layer 19 200837456 P55950136TWC2 23180-2 twf.doc / n 410 : low-pressure gas layer 412 · side wall structure 414: reflective layer 420: electron 430: light 1100, 110a, 110b, 110c: light-emitting panel 1101 : Light-emitting module 1102, 1102a, 1102b, 1102c: power supply controller 1104: heat dissipation mechanism 1106: brightening optical film 1108: diffusion module L) 20

Claims (1)

200837456 P55950136TWC2 23180-2twf.doc/n 十、申請專利範面: 1· 一種光源裝置,包括: 陰極結構,具有透光特性,做為一出光面; =極結構,位於雜極結構對向,具有光反射特性; 一螢光層’位rnrn極結構與·極結構之間;以及 pi Γ低塵二氣體層,填充於該陰極結構與該陽極結構之 b ’〜罐氣體層具有誘導陰極均勻發射電子的作用, Γ +封該低魏體層有—大的電子平均自由路徑,允許 〶子在-操作賴下可直接撞擊該縣層,以產生所要的 光。 A 2.如申請專利範圍第1項所述之光源裝置,其中該二 次電子產生層包括容易產生電子的材料。 3.如申請專利範圍第2項所述之光源裝置,其中該容 易產生電子的材料包括氧化鎂(MgO)、氧化铽(Tb2〇3)、氧 化鑭(La2〇3)或氧化鈽(Ce02)。 胃产4·如申請專利範圍第丨項所述之光源裝置,其中該低 ◎ 壓氣體層的氣壓是在SxHT1〜1(T3 torr的範圍内。 、5·如申請專利範圍第1項所述之光源裝置,更包括一 邊,結構,用以將該陰極結構與該陽極結構隔開,且構成 一密閉空間以構成該低壓氣體層。 6·如申請專利範圍第1項所述之光源裝置,更包一二 次電子產生層,位於在該陰極結構上。 7·如申請專利範圍第1項所述之光源裝置,其中該陽 極結構包括一電極層與一光反射層。 21 200837456 P55950136TWC2 23180-2twf.doc/n 8.如申請專利範圍第1項所述之光源裝置 極結構是金屬材料,_具有歧射特性/ 9· 一種光源裝置,包括·· 一陰極結構,具有透光特性; ΓΓΐί構’錄雜赌構對向,具树光特性; 放电層,位於概極結構_陽極結構的至少其中200837456 P55950136TWC2 23180-2twf.doc/n X. Application for patents: 1. A light source device comprising: a cathode structure having a light transmitting property as a light exiting surface; a pole structure located opposite the heteropolar structure; Light-reflecting characteristics; a phosphor layer between the rnrn pole structure and the pole structure; and a pi Γ low-dust two-gas layer filled in the cathode structure and the anode structure of the b'~can gas layer have induced uniform emission of the cathode The role of electrons, Γ + seal the low Wei body layer has a large electron mean free path, allowing the scorpion to directly hit the county layer under the operation - to produce the desired light. A light source device according to claim 1, wherein the secondary electron generating layer comprises a material which is easy to generate electrons. 3. The light source device of claim 2, wherein the electron-producing material comprises magnesium oxide (MgO), cerium oxide (Tb2〇3), cerium oxide (La2〇3) or cerium oxide (Ce02). . The light source device of the invention of claim 2, wherein the gas pressure of the low pressure gas layer is in the range of SxHT1~1 (T3 torr.), as described in item 1 of the patent application scope. The light source device further includes a side structure for separating the cathode structure from the anode structure, and constituting a sealed space to form the low-pressure gas layer. 6. The light source device according to claim 1, A light source device according to claim 1, wherein the anode structure comprises an electrode layer and a light reflecting layer. 21 200837456 P55950136TWC2 23180- 2twf.doc/n 8. The light source device according to claim 1 is a metal material, _ having a morphing property / 9. A light source device comprising: a cathode structure having a light transmitting property; ΓΓΐί The structure of the recording and the gambling is opposite, with tree light characteristics; the discharge layer is located at least in the structure of the anode structure 一螢光層,位於該陰極結構與該陽極結構之間; 一低職縣’填紐該陰極結構無陽極結構之 間,該低壓氣體層具有誘導陰極均勻發射電子作用, 其中該低壓氣體層有一大的電子平均自由路徑,使電 子在一操作電壓下可直接撞擊該螢光層。 ιο·如申請專利範圍第9項所述之光源裝置,其中該 放電層位於該陰極結構上。 ^ 如申請專利範圍第9項所述之光源裝置,其中該 放電層位於該陽極結構上。 u 其中該a phosphor layer located between the cathode structure and the anode structure; a low-grade gas layer having a cathode to uniformly emit electrons, wherein the low-pressure gas layer has a The large electron mean free path allows the electron to directly strike the phosphor layer at an operating voltage. The light source device of claim 9, wherein the discharge layer is located on the cathode structure. The light source device of claim 9, wherein the discharge layer is located on the anode structure. u where 12·如申請專利範圍第9項所述之光源裝置,其中該 放電層位於該陰極結構以及該陽極結構上。 ^ 13·如申請專利範圍第9項所述之光源裝置,其中放 電層包括容易放電的材料。 ^ 14·如申請專利範圍第13項所述之光源裝置,其中該 奋易放電的材料包括金屬。 ^ 15·如申請專利範圍第13項所述之光源裝置,其中該 各易放電的材料包括奈米碳管、奈米碳壁或奈米碳材。 22 200837456 P55950136TWC2 23180-2twf.doc/n 16·如申請專利範圍第13項所述之光源裝置,其中該 容易放電的材料包括柱狀氧化鋅(ZnO)或氧化鋅薄膜。 17·如申請專利範圍第9項所述之光源裝置,其中該 低壓氣體層的氣壓是在8ΧΚΓ1〜nr3 torr的範圍内。 18·如申請專利範圍第9項所述之光源裝置,更包括 一邊壁結構’用以將該陰極結構與該陽極結構隔開,且構 成一密閉空間以構成該低壓氣體層。 € 19·如申請專利範圍第9項所述之光源裝置,更包括 一反射層,位於該螢光層與該陽極結構之間。(復原此項) 20· —種背光源裝置,包括: 至少一電源控制器,提供至少一操作電壓;以及 一發光單元,包括至少一發光面板,該發光面板受該 操作電壓控制,其中該發光面板包括: 一陰極結構; 一陽極結構,位於該陰極結構對向; 一螢光層,位於該陰極結構與該陽極結構之間; 〇 以及 一低壓氣體層,填充於該陰極結構與該陽極結構 之間,該低壓氣體層具有誘導陰極均勻發射電子的作用, ^ 其中該低壓氣體層有一大的電子平均自由路 杈,使電子在一操作電壓下可直接撞擊該螢光層。 21. 如申請專利範圍第2〇項所述之背光源裝置,更包 括一散熱機構,配置在該發光面板的一背面。 22. 如申請專利範圍第2〇項所述之背光源裝置,更包 23 200837456 P55950136TWC2 23180-2twf.doc/n 括一增亮光學膜,配置在該發光面板的 23·如申請專利範圍第20項所述之背光源裝置,其中 該發光面板更包括一二次電子產生層,位於在該陰極結構 上。 24·如申清專利範圍第2〇項所述之背光源裝置,其中 該發光面板更包括一放電層,位於該陰極結構與該陽極結 構的至少其中之一上。 25·如申請專利範圍第2〇項所述之背光源裝置,其中 該發光單元包括多個該發光面板。 26·如申請專利範圍第2〇項所述之背光源裝置,更包 括—增亮光學膜’配置在該發光面板的出光面的一邊。 —如申請專利範圍第20項所述之背光源裝置,更包 擴散模組,在該些發光面板與該增亮光學膜之間。 28.如申請專利範圍第2〇項所述之背光源裝置,其中 該陰極結構與觸赌構之其_具有光穿透性,而另其一 具有光反射性。 a Ο 29·如申請專利範圍第20項所述之背光源裝置,其中 ίϋι發光面板是由多個發光面板組成—_,分別發 尤稱成一發光面。 见如申請專利範圍第2〇項所述之背光源裝置,其中 以 >、一發光面板,是由多個發光面板構成一堆疊結構。 2412. The light source device of claim 9, wherein the discharge layer is on the cathode structure and the anode structure. The light source device of claim 9, wherein the discharge layer comprises a material that is easily discharged. The light source device of claim 13, wherein the material that is easily discharged includes metal. The light source device of claim 13, wherein the easily dischargeable material comprises a carbon nanotube, a nanocarbon wall or a nano carbon material. The light source device of claim 13, wherein the easily dischargeable material comprises a columnar zinc oxide (ZnO) or zinc oxide film. The light source device of claim 9, wherein the pressure of the low pressure gas layer is in the range of 8ΧΚΓ1 to nr3 torr. 18. The light source device of claim 9, further comprising a side wall structure for separating the cathode structure from the anode structure and forming a closed space to constitute the low pressure gas layer. The light source device of claim 9, further comprising a reflective layer between the phosphor layer and the anode structure. (Restoring this item) 20. A backlight device comprising: at least one power controller providing at least one operating voltage; and a lighting unit comprising at least one lighting panel, the lighting panel being controlled by the operating voltage, wherein the lighting The panel comprises: a cathode structure; an anode structure located opposite the cathode structure; a phosphor layer between the cathode structure and the anode structure; and a low pressure gas layer filled in the cathode structure and the anode structure Between the low-pressure gas layer has the function of inducing the cathode to uniformly emit electrons, wherein the low-pressure gas layer has a large electron mean free path, so that the electron can directly strike the phosphor layer at an operating voltage. 21. The backlight device of claim 2, further comprising a heat dissipating mechanism disposed on a back surface of the light emitting panel. 22. The backlight device of claim 2, further comprising 23 200837456 P55950136TWC2 23180-2twf.doc/n comprising a brightening optical film disposed on the light-emitting panel 23 as claimed in claim 20 The backlight device of the present invention, wherein the light emitting panel further comprises a secondary electron generating layer located on the cathode structure. The backlight device of claim 2, wherein the light emitting panel further comprises a discharge layer on at least one of the cathode structure and the anode structure. The backlight device of claim 2, wherein the light emitting unit comprises a plurality of the light emitting panels. 26. The backlight device of claim 2, further comprising a brightness enhancing optical film disposed on one side of the light emitting surface of the light emitting panel. The backlight device of claim 20, further comprising a diffusion module between the light-emitting panel and the brightness enhancing optical film. 28. The backlight device of claim 2, wherein the cathode structure has a light transmittance and the other has light reflectivity. The backlight device of claim 20, wherein the illuminating panel is composed of a plurality of illuminating panels, respectively, which are specifically referred to as a illuminating surface. The backlight device of claim 2, wherein the light-emitting panel comprises a plurality of light-emitting panels. twenty four
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KR1020080019310A KR100945900B1 (en) 2007-03-02 2008-02-29 Light source apparatus and backlight module
US12/039,751 US7936118B2 (en) 2007-03-02 2008-02-29 Light source apparatus comprising a stack of low pressure gas filled light emitting panels and backlight module
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TWI420564B (en) * 2010-03-16 2013-12-21 Ind Tech Res Inst 3-dimension facet light-emitting source device and stereoscopic light-emitting source device
TWI461093B (en) * 2008-11-14 2014-11-11 Ind Tech Res Inst Dual-purpose light-penetrating and light-emitting device and light-penetrative illuminating structure
CN109375309A (en) * 2018-11-30 2019-02-22 东莞市谷麦光学科技有限公司 A kind of composite LED light guide plate and preparation method thereof
CN112586392A (en) * 2020-12-10 2021-04-02 海宁绿拓照明科技有限公司 Poultry breeding illumination and protection device with warm-keeping effect

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JP2005044616A (en) * 2003-07-22 2005-02-17 Shinichi Hirabayashi Field emission lamp
TW200525240A (en) * 2004-01-16 2005-08-01 Hon Hai Prec Ind Co Ltd Backlight module
KR100647305B1 (en) * 2004-12-23 2006-11-23 삼성에스디아이 주식회사 Photovoltallic device, lamp and display panel adopting the device
TWI278249B (en) * 2005-08-10 2007-04-01 Ind Tech Res Inst Method for increasing the uniformity of a flat panel light source and the light source thereof

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TWI461093B (en) * 2008-11-14 2014-11-11 Ind Tech Res Inst Dual-purpose light-penetrating and light-emitting device and light-penetrative illuminating structure
TWI420564B (en) * 2010-03-16 2013-12-21 Ind Tech Res Inst 3-dimension facet light-emitting source device and stereoscopic light-emitting source device
CN109375309A (en) * 2018-11-30 2019-02-22 东莞市谷麦光学科技有限公司 A kind of composite LED light guide plate and preparation method thereof
CN112586392A (en) * 2020-12-10 2021-04-02 海宁绿拓照明科技有限公司 Poultry breeding illumination and protection device with warm-keeping effect

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