TW200837212A - Technique for atomic layer deposition - Google Patents

Abstract

A technique for atomic layer deposition is disclosed. In one particular exemplary embodiment, the technique may be realized by an apparatus for atomic layer deposition. The apparatus may comprise a process chamber having a substrate platform to hold at least one substrate. The apparatus may also comprise a supply of a precursor substance, wherein the precursor substance comprises atoms of at least one first species and atoms of at least one second species, and wherein the supply provides the precursor substance to saturate a surface of the at least one substrate. The apparatus may further comprise a plasma source of metastable atoms of at least one third species, wherein the metabstable atoms are capable of desorbing the atoms of the at least one second species from the saturated surface of the at least one substrate to form one or more atomic layers of the at least one first species.

Description

200837212 23812pif IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present disclosure relates generally to semiconductor fabrication and, more particularly, to atomic layer deposition techniques. [Prior Art] Modern semiconductor manufacturing has established a need for accurate atomic deposition of high quality thin film structures. In response to this demand, in recent years, a large number of film growth techniques collectively referred to as atomic layer deposition (ALD) ato atomic layer epitaxy (ALE) have been developed. The A L D technology is capable of depositing a uniform and conformal film with atomic layer accuracy. A typical ALD process uses a continuous self-limiting surface reaction to achieve control of film growth in a single layer thickness state. Due to its excellent potential for film uniformity and uniformity, ALD has become the technology of choice for advanced applications such as 咼 dielectric constant (high-k) gate oxides, storage capacitor dielectrics, and microelectronic devices. The copper in the diffusion barrier. In fact, ALD technology may be useful for any south-level application that benefits from the precise control of the film structure on the nanometer (nm) or sub-nano scale. However, to date, most existing deposition techniques suffer from inherent drawbacks and have not been reliably applied to mass production in the semiconductor industry. For example, s 'molecular beam epitaxy, ( ΜΒΕ ) deposition technique uses a separate effusion cell controlled by a baffle to direct different types of atoms to a substrate surface on which the atoms are The upper ones react to form a desired single layer. In a solid source MBE process, the effusion cell is heated to a relatively high temperature for the thermal separation of the constituent atoms. 7200837212 23812pif =; a very high vacuum must be maintained to ensure that the constituent atoms reach the substrate surface. There is no collision between them. j bauxite vacuum requirements 'MBE film growth rate temperature and low. The purpose of the leap for the production of Otsuka is quite the temperature adjustment of the enamel crystal (ALE). For the relatively low temperature, the substrate is deposited on the surface of the substrate (& 早 early layer. Mi, the substrate temperature is raised uniformly to roughly 5 to remove the gas atom five sub-layers. Although this technology is not controlled The layer-by-layer film growth, but the requirement for repeated temperature ♦ values makes it difficult to maintain repeatability between the layer and the layer on the larger wafer. In addition, heating the substrate to the same temperature may sue or The fine structure formed on the substrate in the previous processing step is destroyed. A prior art ALD technique uses ion bombardment to desorb excessive hydrogen atoms. According to this technique, a dioxane monolayer can be formed on the surface of the substrate using dioxane (Si2H6) gas. The substrate surface is then bombarded with helium or argon ions to desorb excess helium atoms from the dioxane monolayer to form a monolayer. Perhaps due to excessive high energy ion bombardment (~50 eV ion energy), the membrane growth rate is comparable. Low (less than a single layer per cycle ,·15), and the high-energy ion current is essentially a line-of-sight process (line_〇f_sight process), which can therefore include atomic layer deposition potentials for highly conformal deposition In addition, high-energy ions can also cause crystalline defects that may require post-deposition annealing. In addition, 'conformal d叩ing for ALD-deposited films (especially in 3-D structures (eg, FinFET)) Processman 200837212 ^812pif is not suitable for the t-shaped cover structure, not only because of A: dopant properties '--3⁄4 and lack ===- species to overcome the above-mentioned non-axis - [Summary]

Cj implements layer deposition techniques. In a particular example, the device may include two =: === technology.匕Base platform. The apparatus may also include a source of == two at least one type and at least one of the plates and wherein the supply source provides a precursor to saturate the surface of the substrate. The device may further comprise an electrical enthalpy source of at least one type of metastable atom, wherein the metastable atom is capable of detaching from a saturated surface of the substrate - a second type of atom to form at least one first species One or more atomic layers. In a further exemplary embodiment, this technique can be implemented as a method for atomic layer deposition. The method can include saturating a substrate surface with at least one atom of the first species and at least a second species of atomic species, thereby forming a single layer of precursor material on the surface of the substrate. The method can also include exposing the surface of the substrate to a metastable atom produced by a third type of plasma, wherein the metastable atom desorbs at least one atom of the second species from the surface of the substrate to form at least one atom of the first species Floor. 9 200837212 23812ριί Atomic layer deposition method can include a plurality of deposition cycles to form a plurality of atomic layers of a first species, wherein each deposition cycle repeats the steps described above to form an atomic layer of the first species. In yet another particular exemplary embodiment, this technique can be implemented by means for atomic layer deposition. The apparatus can include a processing chamber having a substrate platform for holding at least one substrate. The device may also include a source of dioxane (ShH6) (wherein the supply source is used to supply a sufficient amount of

The stone is burned to saturate the surface of at least one of the substrates. The apparatus may further include a plasma chamber connected to the processing chamber on one side, the plasma chamber being configured to generate a metastable steady state atom from a helium supply source. The metastable atoms may be capable of desorbing hydrogen atoms from the saturated surface of at least one of the substrates, thereby forming one or more layers of the atoms. In another particular exemplary embodiment, this technique can be implemented as a conformal doping method. The method may include forming a phase on the surface of the substrate on a deposition surface, wherein 'in each of the plurality of deposition cycles, in the middle, supplying at least one of the atoms of the first type and at least two A precursor of a second type of atom is used to saturate the surface of the substrate, and at least one atom of the second species is desorbed with the surface of the substrate to form a layer of atoms of the first type. The method may also include replacing the precursor material with a dopant precursor in at least one or more of the product cycles: at least a portion of the source, thereby doping at least one or more atomic layers of the species. A ^ See the exemplary embodiment of the present disclosure as shown in the drawings, and the disclosure is described in detail. Although the disclosure of the present invention is described below with reference to the exemplary embodiments, it should be understood that the disclosure is not limited thereto. It will be appreciated that those skilled in the art will recognize additional construction, modifications, and embodiments, and other fields of use within the scope of the present disclosure as described herein, and as such, the disclosure may have Significant utility. [Embodiment] To solve the problems associated with existing atomic layer deposition techniques, embodiments of the present disclosure introduce an ALD and in-situ doping (9) J such as doping technique. Metastable atoms (metastaWe at 〇m) can be used to desorb too many atoms. Metastable atoms can be produced, for example, in a plasma chamber. For purposes of illustration, the following description will focus on methods and apparatus for depositing doped or undoped germanium using germanium metastable atoms. It should be understood that other types of films may be grown using ruthenium or other metastable atoms by the same or similar techniques. Referring to Figure 1, there is shown a block diagram illustrating an exemplary atomic layer deposition cycle 100 in accordance with an embodiment of the present disclosure. The exemplary atomic layer deposition cycle 100 can include two phases: a saturation phase 10 and a desorption phase 12. In the saturation phase 10, the substrate 102 can be exposed to a dioxane (Si2H6) body. For pin growth, the surface of the substrate may include, for example, Shixia, Ba, Ba, SOI, and/or sulphur dioxide. The two-stone gas is used as a pre-existing body' and is supplied at a sufficiently high dose to saturate the surface of the substrate to form a disulfide I 1 () 4 . However, in the text of the entire text, the use of words, saturation does not preclude the case where the surface of the substrate is only used to make the surface "filled with a spoiled object. The substrate 102 and the processing environment can be kept - carefully selected At the temperature to prevent the front surface of the precursor gas substrate from freezing or decomposing. In this embodiment, the substrate 102 is heated to and maintained at a temperature between 18 〇 QC and 400 ° C, however, the disclosure is In the scope of the substrate 102, the substrate 102 can also be heated and maintained in other temperature ranges. In the desorption phase 12, the substrate 102 can be exposed to a sufficient amount of energy, and the sorrowful atoms are used to desorb from the early layer. Too many atoms. According to this embodiment, the ruthenium metastable atoms can be used to partially or completely desorb excess hydrogen atoms from the two singular monolayers 104 formed in the saturation phase 10. This can be, for example, inductively coupled to a plasma. The helium gas is used to establish a metastable steady state atom. Each of the metastable atoms can have an internal energy of approximately 20 eV, which can be used to destroy the bond between the daylight atom and the mouse atom. According to some embodiments, inertia gas( The metastable state of nitrogen, etc., and other excited states tend to emit photons that can also indirectly drive the desorption reaction on the surface of the substrate. After the excess hydrogen atoms have been removed, the single layer 106 can be formed on the surface of the substrate. According to some embodiments, not all of the excess erbium atoms may be removed. Thus, at the end of the desorption stage 12, the surface of the ruthenium monolayer 106 may be a mixture of dangling bonds and hydrogen-terminated silicon atoms. Between the saturation stage 10 and the desorption stage 12, one or more inert gases (eg, chaotic or argon) may be used to purify the substrate surface to remove excess reactive gases and by-products (eg, hydrogen). After the saturation phase 1Q and the desorption phase The complete cycle of 12 (including the "purge step" between the two phases can be referred to as a deposition cycle". The deposition cycle can be repeated 1 〇〇 to simultaneously form a pure tantalum film (eg, crystalline type, multiple Crystal type, amorphous type, etc.), a single layer (or a partial monolayer). According to an embodiment of the present disclosure, a metastable atom is used instead of an ion 12 200837212 23812pit The surface of the substrate saturated by the precursor material desorbs too many atoms θ. The metastable atoms are generated in the plasma for desorption purposes, and the charged particles (such as electrons and ions) generated in the plasma are stopped to the surface of the surface. This makes it possible to reduce or minimize the inward direction 2 attributed to the charged particles. Many measures can be taken to prevent the charged particles from being patterned into the ALD film on the surface of the substrate. For example, in the plasma = Insert one or more devices (such as a plate fc (screen)). These devices can be biased to filter out non-electric particles. Alternatively, an electromagnetic field can be established to deflect the charged particles. The orientation of the substrate surface can be adjusted to minimize two of the charged particles. For example, the substrate platform can be inverted or reversed from the line of sight of =. Alternatively, the plasma source can be positioned at a distance from the substrate such that a substantial portion of the charged particles collide and fails to reach the surface of the substrate.尔政射 or 石亚之如1 Figure 2 'There is a description of another embodiment of the present disclosure. The ALD process described in Figure 1 can be used not only for the ALD process described in Figure 1 ^ or 6. Rank ί can also be used to order a heterogeneous (four) human film or to form a plurality of types and / or undoped J 2: formula. For example, the #H #stack film produced by the ALD process may also be based on a slightly modified deposition (10) process, which may be used - or more than 20,000 g for one or more deposition cycles. Or in the saturation phase 2G of the fish cycle, a dopant precursor gas may be provided instead of the sand front 〆, /, 3. In Fig. 2, two = 200837212 ζ^δϊζρη to π ι κ - 1S 〇 rb)) to the surface of the substrate 102 partially or completely cover the layer. In the desorption phase 22 of the cycle 200, the substrate m is violent to the 氦-stable steady-state atom. The genus desorbs too many hydrogen atoms, leaving a single layer of the film, === the number of depositions (10) of the product cycle can be achieved, the technology depends on the dopant atoms. Dirty Ding =: Open non-ion implant, so it can be distributed. In addition, there is no need for a uniform high-diffusion process after the homogenization of the impurity surface: the ignition required for the atom of the atom, which results in the doping of the dopant species or the doping of the low-temperature retreat "box shape,"

Uhermal budget) "is good. Industry", the preselection of the selective process of the atomic layer surface composition according to the embodiment of the present disclosure, 2 taken from the base = Γ:: Γ: on the (four) face or (10) : face: instead of the surface of the substrate, the oxidized shielding layer can be shielded 14 200837212 2J»IZpii

It should be understood that although only the ruthenium metastable atoms are used in the above examples, other atomic (four) desorption processes may also be selected. These types of choices can be made based on the lifetime and energy of their metastable or excited states. Table J provides a list of candidate species that can be used in the desorption phase of the aLD process. Table 1 ^______5_Life (s) Energy (e\〇19T ~_24 17 ~~ .— 12 __30 ------ 10 'μ' Type 〇~Ue~ ~αΓ "κΓ —Xe II should also understand In addition to the diborane gas, other dopants w precursors may be used to introduce the desired dopant atoms into the ALD-formed film for introduction of such as boron (B), arsenic (As), phosphorus (p). Suitable dopant precursors for indium (Xin) and ytterbium (referred to as dopant atoms may include, but are not limited to, the following class of compounds: a southern compound (eg, B6), an alkoxide (eg, B(OCH3)3) , an alkyl group (for example, In(CH3)3), a hydride (for example, AsH", PH, a cyclopentadienyl group, an alkylimide, an alkylamine (for example, P[N(CH3)2] 3) and amidinate. " In addition, the doping technique of depositing a single layer containing dopants by an ALD-like process is not limited to the plasma-reinforced A£D process. It is also not necessary to use a metastable atom. For example, the thermal ald can also be used to separate a monolayer of dopants. In fact, this in-situ doping is used in any ALD process, where available - or multiple depositions Blended = 15 200837212 23812pif deposition cycles to replace one or more monolayers commission deposited film to be doped monolayer

The deposition cycle, or the film to be doped therein, can be deposited in the same time as the dopant-containing monolayer. FIG. 3 shows a block diagram illustrating an exemplary system 3A for atomic layer deposition in accordance with an embodiment of the present disclosure. - System 300 can include a processing chamber 3〇2 that can typically be used to obtain high vacuum base pressure (e.g., 1 (Γ7-10) using, for example, turbo pump 306, mechanical pump 308, and other necessary vacuum sealing components. 6 Torr (t〇rr). Within the processing chamber 302, there may be a substrate platform 310 for holding at least one substrate 3. The substrate platform 31 may be equipped with one or more temperature management devices for adjustment and maintenance. The temperature of the substrate 3 can also adjust the tilt or rotation of the substrate platform 3. The processing chamber 302 can be further equipped with one or more membrane growth monitoring devices, such as quartz crystal microbalances and/or RHEED (reflective high energy electron diffraction ( The reflection system can also include a plasma chamber 3〇4 that can be coupled to the processing t/chamber 3〇2 or to be part of the processing chamber 302. Radio frequency (rF can be used) The power source generates an inductively coupled plasma 32 in the plasma chamber 304. For example, the helium gas supplied at an appropriate pressure can be excited by the RF power to generate a tantalum plasma, which in turn generates a helium-state steady state. Atom. System 3 can be more packaged A plurality of gas supply sources, such as a dioxane supply source, a diborane supply source 316, an argon supply source 318, and a helium supply source 320. Each gas supply source can include a flow control valve for setting individual flow rates as desired. Can be by, for example, a valve, a solid 16 200837212 23812pif ο

A small chamber of constant volume and a valve are connected in series to allow gas to be metered into the system. By opening the first valve, the small chamber is first filled to the desired pressure. After closing the valve, the fixed volume of gas is released into the chamber by opening the second valve. The dioxane supply source 314 and the diboron supply source 316 can be lightly coupled to the processing chamber 302 via the first inlet 322 and can supply a sufficient amount of the ruthenium precursor gas and the boron precursor gas, respectively, to saturate the substrate 30. The argon supply source 318 and the helium supply source 320 can be coupled to the plasma chamber 304 via the second inlet 324. Argon supply source 318 can provide argon (or other inert gas) to purge system 300. The helium supply source 32〇 can supply helium gas for the plasma generation of the helium steady state atom. A screen or baffle device 326 may be present between the plasma chamber 3〇4 and the processing chamber 302, as desired. The screen or pad 5 is further provided 326 (biased or unbiased) to prevent at least a portion of the charged particles generated in the plasma chamber go# from reaching the substrate 3(). 4 shows a flow chart illustrating an exemplary method for atomic layer deposition in accordance with an embodiment of the present disclosure. > In step 402, a deposition system such as that shown in Figure 3 can be evacuated to a high vacuum (HV) state. Any vacuum technique now known or later developed can be used to achieve the shirt condition. True equipment can include, for example, mechanical pumps, turbo pumps, and cryogenic pumps (Cry〇Fmmp). The straightness is preferably at least 1 () · 7_1 () · 6 Torr' although it is within the pressure of the disclosure. For example, if a higher film is required, an even higher base vacuum is required. For low purity membranes, & lower work may be acceptable. In step 404, the substrate can be preheated to a desired temperature. Keki 17 200837212 23812pif The substrate temperature is determined based on the substrate* type, the ALD reactant, the desired growth rate, and the like. a In step 406, a helium precursor gas such as dioxane (and its carrier gas, if present) may flow into the processing chamber in which the substrate is located. The ruthenium precursor gas can be supplied at a flow rate or pressure sufficient to saturate the surface of the substrate. The flow of dioxane can last for a few seconds or up to tens of seconds. A single layer of decane may partially or completely cover the surface of the substrate. p In step 408, after the surface is saturated, the hafnium precursor can be broken, and the deposition system can be purged with one or more inert gases to remove excess hafnium precursor. - In step 410, the tantalum plasma can be accessed. That is, helium gas can flow from the plasma chamber to the processing chamber. The tantalum plasma can be either inductively coupled plasma (lGp) or any of a number of other plasma types that provide sufficient enthalpy to the helium atom to produce a helium metastable atom. The substrate in the processing chamber can be exposed to the erbium atom so that it can react with the ruthenium precursor adsorbed on the substrate to desorb non-deuterium atoms. For example, for a dioxane monolayer, the ruthenium-stable 〇 atom can help remove excess hydrogen atoms to form the desired ruthenium monolayer. Substrate ^ exposure to metastable atoms may last (for example) for a few seconds or as many as ten seconds: In step 412, the ruthenium plasma may be turned off and the deposition system may be re-purified with a plurality of inert gases. . 3 In step 414, it may be determined if any doping of the dies is required. If the time required for doping and bowing into the dopant is appropriate, then the transition can be transferred = step 416. Otherwise, the process can return to step 4〇6 to begin the next single layer of the sink stone and/or the end of the deposition layer. , 18 200837212

ZJSIZpiI Bean, 420, 'The dopant precursor gas such as diborane (and the carrier, if present) can flow into the processing chamber. The dopant can be supplied at a flow rate or pressure sufficient to avoid it. Precursor gas: The stone layer is layered. The surface of the substrate is covered or completely covered. f' ti Disconnected after being saturated on both sides 'The dopant precursor can be replaced by a multi-body: a body or an inert gas to purify Deposition system to remove over = upper suction (four) ===== : two =: in two, dazzle single layer, gas metastable original = two in / ^ atom to form the desired part or complete boron monolayer It is 4 ς." 1 The exposure of the steady-state atom can last (for example) a few seconds or as much as = In step 422, the helium can be disconnected and the gas purifies the deposition system again. χ 3 惰性 inert 422, = Γt 4 〇 6 to 412 and / or process step 416 to = = have a single layer (which has the desired dopant distribution), == dew =: ^ ^ implementation For example, only the deposition of the film and/or the change of the grain can be easily used to accumulate or dope other thorns. membrane. For example, it is also possible to deposit fines including two = money, wrong (Ge), carbon (6), gallium (Ga), Shishen (sentence, 19 200837212 ZJ»J2plf indium (In), Ming (Al) or 碌 (P The resulting film may include a single species such as carbon or germanium, or a compound such as a group III-V compound (e.g., GaAs, ΙηΑΙΡ). For this purpose, a precursor species including a corresponding species may be utilized. A candidate for a precursor may be used. Including but not limited to: hydride (such as SiH4, ShH6, GeH4) or halogenated hydride (such as SiHCl3), halogenated hydrocarbons (such as CHF3), alkyl (such as tridecyl aluminum ai (cH3) 3 or dimethyl Ethyl aluminum CHbCHrAKCH3) 2), or a halide such as cci4 or CC12F2.

The present disclosure is not limited by the specific embodiments described herein. In addition, other embodiments and modifications of the present disclosure will be apparent from the foregoing description and drawings. Accordingly, such other embodiments and modifications are intended to be within the scope of the disclosure. In addition, although the disclosure has been described in the context of a particular construction in a particular context for a particular purpose, those skilled in the art will recognize that the utility is not limited thereto and that the disclosure may be used for many purposes. Many environments are beneficially implemented. Therefore, the full scope of this disclosure should be interpreted in the context of the patent interpretation of the scope of the patent. [Simple description of the schema] For the sake of a fuller understanding of the content, the same elements are referred to. These drawings should not be deconstructed to the extent that they are intended to be used for illustrative purposes only. Sub-layer disclosure Illustrative primitives of an embodiment 20 200837212 ZJiSIZpit Figure 2 shows a block diagram illustrating an exemplary atomic layer deposition cycle in accordance with one embodiment of the present disclosure. Figure 3 illustrates an embodiment for illustrating an embodiment in accordance with the present disclosure. A block diagram of an exemplary system for atomic layer deposition.Figure 4 shows a flow chart illustrating an exemplary method for atomic layer deposition in accordance with an embodiment of the present disclosure. [Major component symbol description] 10: Saturation phase 12: off Stage 20: Saturation Stage 22: Desorption Stage 30 • Substrate 32: Inductively Coupled Plasma 100: Atomic Layer Deposition Period 102: Substrate 104: Dioxane Monolayer 106: 矽 Monolayer 200: Atomic Layer Deposition Cycle 204 • Diborane monolayer 206: boron monolayer 300: system 302: processing chamber 304 · plasma chamber 306: full wheel pump 21 200837212

ZJ61ZpiT 308 310 312 314 316 - 318 . 320 322 324 326 Mechanical pump Substrate platform Radio frequency (RF) power supply Dioxane supply source Diborane supply source Argon supply source 氦Supply source First inlet Second inlet Screen or collision device 22

Claims (1)

200837212 2J8I2pif Patent Application Range: 1. A device for atomic layer deposition, the device comprising: a processing chamber having a supply source for holding a substrate of a substrate, wherein The precursor material includes at least one atom of the first species and at least one atom of the second species, and wherein the source of the f) provides the precursor to saturate the surface of the at least one substrate; and at least one third a plasma source of a type of metastable atom, which is returned to the steady state material (4) from the rainbow to the lesser - the plate is desorbed by the at least one of the first phase-inserted phase 4, +, shop 7 clothing n _ Forming one or more atomic layers of the at least one kind of cockroach. And it further comprises: for the accumulation of the product - the surface of the substrate surface of the substrate, which is used for the atomic layer deposition of the enclosure: r up; 'middle production · 々曱明利干围弟i And the supply source further comprising: the precursor of the atomic layer deposition, wherein the supply source is separated from the source of the dopant, wherein the dopant is supplied by the precursor material; Borrow: [Substituting one or more atomic layers of the type in a plurality of deposition cycles. The at least one first type is as claimed in the second paragraph of the patent application, and the device for atomic layer deposition is included in the invention, which further includes a supply source of doping = precursor, wherein more than 4 depositions In the cycle, when the supply source of the 4-wheeling substance is supplied to the precursor of the deer, the supply source of the dopant precursor is supplied to the dopant precursor at substantially the same time. a body whereby the one or more atomic layers of the at least one of the types/types are decorated. 1 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The at least one type of the metastable atomic Γ 水 水 水 水 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生 产生A variety of species: a group consisting of - u 矽; stone farmers; gallium; stone today; indium; Ming; and phosphorus. 9. The apparatus for atomic layer deposition described in the above-mentioned patent garden, 200837212, wherein the substrate surface comprises one or more materials selected from the group consisting of: Shi Xi; Upper crucible (SOI); cerium oxide; diamond; $ eve; strontium carbide; III-V compound; flat material, polymer; and flexible substrate material. 10. The apparatus for atomic layer deposition according to claim 1, wherein the at least one third species comprises one or more species selected from the group consisting of: 氦(He); 氖( Ne); Argon (Ar); 氪 (Kr); 氡 (Rn); and 氙 (Xe). 11. The apparatus for atomic layer deposition of claim 1, wherein the at least one substrate is maintained at a temperature below 500 °C. 12. A method for atomic layer deposition, the method comprising the following step 25: 200837212 23812 pif: using a precursor having at least one atom of the first species and at least one atom of the second species to saturate the surface of the substrate, This forms an early layer of the precursor on the surface of the substrate' and Exposing the surface of the substrate to a metastable atom produced by a third type of plasma, wherein the metastable atom desorbs the at least one atom of the at least one second species from the surface of the substrate to form the at least A first type of atomic layer. 13. An atomic layer deposition method comprising a plurality of deposition cycles to form a plurality of atomic layers of the first species, wherein each deposition cycle repeats the steps as described in claim 12 of the patent application to form the An atomic layer of the first species. 14. The method as claimed in claim 14, further comprising: the atomic layer deposition method of claim 13, wherein one of the deposition periods is simultaneously supplied with doping =:, a seed for the fine drive substance The atomic layer deposition method described in claim 13 of the first embodiment of the present invention, wherein the precursor is substituted for the precursor material to be doped. The dopant precursor describes a plurality of atomic layers. The at least one first type of I6 is as claimed in claim 13 which further includes: the atomic layer deposition method described in the above, in the plurality of deposition cycles 26 200837212 23812pif preventing the plasma source of the metastable atom At least a portion of the charged particles produced in the substrate reach the surface of the substrate. 17. The atomic layer deposition method of claim 13, further comprising: annealing the surface of the substrate at a temperature below 500 °C. 18. The atomic layer deposition method of claim 13, wherein: the precursor material comprises a smectite (Si2H6); the at least one first species comprises a stone eve; the at least one second species Included in hydrogen; and the third species includes hydrazine. 19. The atomic layer deposition method of claim 18, further comprising: masking one or more selected portions of the substrate surface with SiO2. 20. The atomic layer deposition method of claim 13, wherein the precursor material comprises one or more species selected from the group consisting of: Shi Xi; 7: Mountain·々,锗; s; arsenic; indium; 27 200837212 23812pif aluminum; and sarcophagus. 21. The atomic layer deposition method of claim 13, wherein the substrate surface comprises one or more materials selected from the group consisting of: 绝缘; SOS; cerium oxide (丨 ;; 矽锗; # 碳 矽; III-V compound; slab material, polymer; and flexible substrate material. 22. The atomic layer deposition method according to claim 13, wherein The at least one third species includes one or more species selected from the group consisting of: 氦 (He); 氖 (Ne); argon (Ar); 氪 (Kr); 氡 (Rn ); X 2008) 28 200837212 Ζό^ΙΖριΐ 23. A device for atomic layer deposition, the device comprising: a processing chamber to 'the substrate platform with which to hold at least one substrate; a source of dioxane (SkH6), wherein The supply source is for supplying a sufficient amount of dioxane to saturate the surface of the at least one substrate; Coupled in a plasma chamber of the processing chamber, the plasma chamber is configured to generate a helium metastable atom freely from the supply of the disordered supply source; wherein the metastable atom can be from the The saturated surface of at least one of the substrates desorbs hydrogen atoms, thereby forming one or more layers of germanium atoms. 24. The apparatus for atomic layer deposition according to claim 23, further comprising: a diborane (3⁄4⁄4) supply source, wherein the diborane supply source is configured to be one or more At least a portion of the dioxane supply source is replaced in one deposition cycle whereby boron atoms are introduced into the one or more germanium atomic layers. 25. A conformal doping method comprising: forming a thin film on a surface of a substrate in one or more deposition cycles, i in each of said deposition cycles or during a deposition cycle a W-driven substance having at least a first-type atom and at least a second-type atom to saturate the surface of the substrate, and then de-sparing from the surface of the saturated substrate to at least In order to form the at least one type--one atomic layer, and to replace the dopant precursor in the - or more deposition cycles, the supply is at least - Part 29 200837212 23812pif Miscellaneous said at least one of said 2" straight type of said - or a plurality of atomic layers. The at least one type of ^ ^ ^ ^ 25 ^ ^ the conformal doping method, the second type The "domain' atom of the & subclass desorbs the at least one metastable atom of the type of the patent application. f) A conformal doping method for preventing at least -hi of charged particles, wherein the conformal doping method described in at least the j-th m7 item, or a plurality of _: is selected from the group consisting of: He); 氖(Ne); argon (Ar); 氪(Kr); 氡(Rn); and ^ C Xe ^ 〇 method, or a plurality of precursors described in the above-mentioned patent scope Substance Xiao Xiao ~ The first shell consists of a group consisting of far below free; carbon; niobium; gallium; 30 200837212 23mZpii arsenic; indium; aluminum; 31. The surface of the substrate as claimed in claim 25, comprising: a method selected from the group consisting of: one, one or more groups of stones; and an insulator (SOI) ; ruthenium dioxide; diamond; ruthenium; ruthenium carbide; III-V compound; flat material; polymer; and flexible substrate material. 32. The conformal doping described in claim 25, wherein the surface of the substrate is maintained at less than 5 〇 (rCi temperature. /, 33) conformal doping as described in claim 25 of the patent application. In the method, the surface of the substrate is not subjected to further heat treatment before the doping of the dopant. The atomic doping method of claim 25, wherein the substrate surface has a three-dimensional topology. The conformal doping method of claim 34, wherein the film is part of a FinFET structure. 32. The conformal doping method of claim 34, wherein the film is part of a FinFET structure.