Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon CorpfiledCriticalNikon Corp
Publication of TW200834257ApublicationCriticalpatent/TW200834257A/en
Application grantedgrantedCritical
Publication of TWI430045BpublicationCriticalpatent/TWI430045B/en
Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure
(AREA)
Exposure And Positioning Against Photoresist Photosensitive Materials
(AREA)
Abstract
The present invention provides a projection optical apparatus. When forming a magnified image of a mask pattern on an object with a plurality of projection optical systems, projected images of the projection optical systems are formed to be accurately continuous so as to enable satisfactory pattern transfer. The projection optical apparatus includes: a first projection optical system (PL 1) directing light beam form point a on a mask (MA) to point (A) on a plate (PT); a second projection optical system (PL2) directing light beam from point (b) on the mask (MA) to point (B) on the plate (PT) and forming a magnified image of the mask (MA) on the plate (PT); a first line segment linking point (A) and point (a'), which orthogonally projects point a on the plate (PT); and a second line segment linking point (B) and point (b'), which orthogonally projects point (b) on the plate (PT), overlap each other as viewed in a non-canning direction.
TW096147451A2007-01-042007-12-12Projection optical apparatus, exposure method and apparatus, photomask, and device and photomask manufacturing method
TWI430045B
(en)
Microlithography projection optical system, microlithographic tool comprising such an optical system, method for microlithographic production of microstructured components using such a microlithographic tool, microstructured component being produced by s
Lithographic marker structure, lithographic projection apparatus comprising such a lithographic marker structure and method for substrate alignment using such a lithographic marker structure