TW200833867A - Vortex chamber lids for atomic layer deposition - Google Patents

Vortex chamber lids for atomic layer deposition

Info

Publication number
TW200833867A
TW200833867A TW096139939A TW96139939A TW200833867A TW 200833867 A TW200833867 A TW 200833867A TW 096139939 A TW096139939 A TW 096139939A TW 96139939 A TW96139939 A TW 96139939A TW 200833867 A TW200833867 A TW 200833867A
Authority
TW
Taiwan
Prior art keywords
dispersing channel
gas dispersing
gas
atomic layer
layer deposition
Prior art date
Application number
TW096139939A
Other languages
Chinese (zh)
Other versions
TWI410518B (en
Inventor
Dien-Yeh Wu
Puneet Bajaj
Xiao-Xiong Yuan
Steven H Kim
Schubert S Chu
Paul F Ma
Joseph F Aubuchon
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of TW200833867A publication Critical patent/TW200833867A/en
Application granted granted Critical
Publication of TWI410518B publication Critical patent/TWI410518B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45502—Flow conditions in reaction chamber
    • C23C16/45506—Turbulent flow
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45582—Expansion of gas before it reaches the substrate

Abstract

Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing a gas dispersing channel at a central portion, wherein a converging portion of the gas dispersing channel tapers towards a central axis of the gas dispersing channel and a diverging portion of the gas dispersing channel tapers away from the central axis. The chamber lid assembly further contains a tapered bottom surface extending from the diverging portion of the gas dispersing channel to a peripheral portion of the chamber lid assembly, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate and two conduits are coupled to gas inlets within the converging portion of the gas dispersing channel and positioned to provide a circular gas flow through the gas dispersing channel.
TW096139939A 2006-10-24 2007-10-24 Vortex chamber lids for atomic layer deposition TWI410518B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US86276406P 2006-10-24 2006-10-24

Publications (2)

Publication Number Publication Date
TW200833867A true TW200833867A (en) 2008-08-16
TWI410518B TWI410518B (en) 2013-10-01

Family

ID=39325378

Family Applications (2)

Application Number Title Priority Date Filing Date
TW101104434A TWI476297B (en) 2006-10-24 2007-10-24 Vortex chamber lids for atomic layer deposition
TW096139939A TWI410518B (en) 2006-10-24 2007-10-24 Vortex chamber lids for atomic layer deposition

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW101104434A TWI476297B (en) 2006-10-24 2007-10-24 Vortex chamber lids for atomic layer deposition

Country Status (4)

Country Link
KR (3) KR101448447B1 (en)
CN (4) CN102586760B (en)
TW (2) TWI476297B (en)
WO (1) WO2008052047A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101810532B1 (en) 2010-03-12 2017-12-19 어플라이드 머티어리얼스, 인코포레이티드 Atomic layer deposition chamber with multi inject
US9322097B2 (en) 2013-03-13 2016-04-26 Applied Materials, Inc. EPI base ring
US9252392B2 (en) 2013-03-14 2016-02-02 Applied Materials, Inc. Thin film encapsulation-thin ultra high barrier layer for OLED application
US9890456B2 (en) * 2014-08-21 2018-02-13 Asm Ip Holding B.V. Method and system for in situ formation of gas-phase compounds
US9951421B2 (en) * 2014-12-10 2018-04-24 Lam Research Corporation Inlet for effective mixing and purging
JP6487747B2 (en) 2015-03-26 2019-03-20 株式会社Ｓｃｒｅｅｎホールディングス Substrate processing apparatus and processing gas supply nozzle
FI128855B (en) * 2019-09-24 2021-01-29 Picosun Oy Fluid distributing device for a thin-film deposition apparatus, related apparatus and methods

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AUPO129096A0 (en) * 1996-07-26 1996-08-22 Boc Gases Australia Limited Oxygen dissolver for pipelines or pipe outlets
US5951771A (en) * 1996-09-30 1999-09-14 Celestech, Inc. Plasma jet system
US6213049B1 (en) * 1997-06-26 2001-04-10 General Electric Company Nozzle-injector for arc plasma deposition apparatus
NO309625B1 (en) * 1997-10-10 2001-02-26 V Telemark Bedriftsraa Waskaas Method for reducing current resistance in pipe and duct current
US6495233B1 (en) * 1999-07-09 2002-12-17 Applied Materials, Inc. Apparatus for distributing gases in a chemical vapor deposition system
KR100319494B1 (en) * 1999-07-15 2002-01-09 김용일 Apparatus for Deposition of thin films on wafers through atomic layer epitaxial process
US6477980B1 (en) * 2000-01-20 2002-11-12 Applied Materials, Inc. Flexibly suspended gas distribution manifold for plasma chamber
US6818250B2 (en) * 2000-06-29 2004-11-16 The Regents Of The University Of Colorado Method for forming SIO2 by chemical vapor deposition at room temperature
US6734020B2 (en) * 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
US6916398B2 (en) * 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6632325B2 (en) * 2002-02-07 2003-10-14 Applied Materials, Inc. Article for use in a semiconductor processing chamber and method of fabricating same
JP5519105B2 (en) * 2004-08-02 2014-06-11 ビーコ・インストゥルメンツ・インコーポレイテッド Chemical vapor deposition method and gas supply system for chemical vapor deposition reactor
US7722719B2 (en) * 2005-03-07 2010-05-25 Applied Materials, Inc. Gas baffle and distributor for semiconductor processing chamber

Also Published As

Publication number Publication date
CN102586761B (en) 2014-10-15
WO2008052047A3 (en) 2008-12-11
KR20090083404A (en) 2009-08-03
CN104073778A (en) 2014-10-01
KR101448447B1 (en) 2014-10-13
CN101528973B (en) 2012-04-25
CN102586760A (en) 2012-07-18
KR20120048685A (en) 2012-05-15
KR101432257B1 (en) 2014-08-21
KR20140009593A (en) 2014-01-22
CN102586760B (en) 2016-07-06
CN104073778B (en) 2017-08-25
CN102586761A (en) 2012-07-18
WO2008052047A2 (en) 2008-05-02
TWI410518B (en) 2013-10-01
CN101528973A (en) 2009-09-09
TWI476297B (en) 2015-03-11
TW201241228A (en) 2012-10-16

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