TW200736420A - Susceptor and apparatus for manufacturing epitaxial wafer - Google Patents

Susceptor and apparatus for manufacturing epitaxial wafer

Info

Publication number
TW200736420A
TW200736420A TW096104583A TW96104583A TW200736420A TW 200736420 A TW200736420 A TW 200736420A TW 096104583 A TW096104583 A TW 096104583A TW 96104583 A TW96104583 A TW 96104583A TW 200736420 A TW200736420 A TW 200736420A
Authority
TW
Taiwan
Prior art keywords
face
wafer
susceptor
inner peripheral
wafer mounting
Prior art date
Application number
TW096104583A
Other languages
Chinese (zh)
Inventor
Kouichi Nishikido
Motonori Nakamura
Atsuhiko Hirosawa
Noboru Iida
Norihiko Sato
Original Assignee
Sumco Techxiv Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumco Techxiv Corp filed Critical Sumco Techxiv Corp
Publication of TW200736420A publication Critical patent/TW200736420A/en

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

This invention provides a susceptor, which can suppress a variation in the thickness of an epitaxial film in a substrate wafer on its surface peripheral part, and an apparatus for manufacturing an epitaxial wafer. An approximately disk-shaped wafer mounting part (21) and an approximately ring plate-shaped peripheral part (22) are provided on a susceptor (2). The wafer mounting part (21) has a larger outside diameter than a substrate wafer (W). The peripheral part (22) has an inner peripheral face (22A), which stands so as to surround the periphery of the wafer mounting part (21), and an upper face (22B) protruded outward from the upper end of the inner peripheral face (22A) along the mounting face (21A) of the wafer mounting part (21). A vapor growth control part (23), formed of SiO2 which is less likely to react with a reactive gas as compared with an SiC film, is provided so that the inner peripheral face (23A) conforms to the inner peripheral face (22A) in the peripheral part (22) and the upper face (23B) conforms to the upper face (22B) in the peripheral part (22).
TW096104583A 2006-02-09 2007-02-08 Susceptor and apparatus for manufacturing epitaxial wafer TW200736420A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006032878 2006-02-09
JP2007027113A JP2007243167A (en) 2006-02-09 2007-02-06 Susceptor and apparatus for manufacturing epitaxial wafer

Publications (1)

Publication Number Publication Date
TW200736420A true TW200736420A (en) 2007-10-01

Family

ID=38588347

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096104583A TW200736420A (en) 2006-02-09 2007-02-08 Susceptor and apparatus for manufacturing epitaxial wafer

Country Status (2)

Country Link
JP (1) JP2007243167A (en)
TW (1) TW200736420A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105800547A (en) * 2016-04-08 2016-07-27 厦门大学 Temporary bonding method for wafer-level ultra-thin silicon wafer in chemical-mechanical polishing

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5092975B2 (en) * 2008-07-31 2012-12-05 株式会社Ｓｕｍｃｏ Epitaxial wafer manufacturing method
JP5659493B2 (en) * 2010-01-18 2015-01-28 信越半導体株式会社 Vapor growth method
JP5604907B2 (en) * 2010-02-25 2014-10-15 信越半導体株式会社 Semiconductor substrate support susceptor for vapor phase growth, epitaxial wafer manufacturing apparatus, and epitaxial wafer manufacturing method
KR101496572B1 (en) 2012-10-16 2015-02-26 주식회사 엘지실트론 Susceptor for Epitaxial Growth And Epitaxial Growth Method
KR101496582B1 (en) 2013-11-25 2015-02-27 주식회사 엘지실트론 Susceptor for Manufacturing Epitaxial Wafer
JP6341083B2 (en) 2014-12-25 2018-06-13 株式会社Sumco Epitaxial silicon wafer manufacturing method
DE102017206671A1 (en) * 2017-04-20 2018-10-25 Siltronic Ag A susceptor for holding a wafer having an orientation notch during deposition of a film on a front side of the wafer and methods for depositing the film using the susceptor
JP7147551B2 (en) * 2018-12-27 2022-10-05 株式会社Sumco Vapor deposition apparatus and carrier used therefor
KR102239849B1 (en) * 2021-03-17 2021-04-13 (주)지비유 데이터링크스 System for providing and storing cctv video based on customized video layout according to the purpose of cctv video monitoring for reducing power consumption

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105800547A (en) * 2016-04-08 2016-07-27 厦门大学 Temporary bonding method for wafer-level ultra-thin silicon wafer in chemical-mechanical polishing

Also Published As

Publication number Publication date
JP2007243167A (en) 2007-09-20

Similar Documents

Publication Publication Date Title
TW200736420A (en) Susceptor and apparatus for manufacturing epitaxial wafer
WO2009140153A3 (en) Apparatus for etching semiconductor wafers
TW200802552A (en) Method of manufacturing epitaxial silicon wafer and apparatus thereof
TW200802547A (en) Selective deposition
WO2012002995A3 (en) Thin films and methods of making them using cyclohexasilane
WO2012170150A3 (en) Selective deposition of polymer films on bare silicon instead of oxide surface
WO2009086257A3 (en) Susceptor with support bosses
WO2012057987A3 (en) Deposition ring and electrostatic chuck for physical vapor deposition chamber
WO2012087002A3 (en) Chemical vapor deposition apparatus and method for manufacturing light-emitting devices using same
WO2012125560A3 (en) Method and apparatus for plasma dicing a semi-conductor wafer
TW200943419A (en) Low wet etch rate silicon nitride film
WO2009011532A3 (en) Apparatus, method for depositing thin film on wafer and method for gap-filling trench using the same
TW200711029A (en) Substrate processing apparatus and substrate stage used therein
TW200606169A (en) Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films
WO2009154853A3 (en) Wafer processing deposition shielding components
WO2007149210A3 (en) Gas injection to etch a semiconductor substrate uniformly
WO2006097804A3 (en) System and process for high-density,low-energy plasma enhanced vapor phase epitaxy
TW200737315A (en) Method of forming a silicon layer and method of manufacturing a display substrate by using the same
TW200737305A (en) Notched deposition ring
WO2008079722A3 (en) Non-contact process kit
CA2889623C (en) Thermal spraying of ceramic materials
SG143123A1 (en) Epitaxially coated semiconductor wafer and device and method for producing an epitaxially coated semiconductor wafer
JP2017166065A5 (en)
SG155840A1 (en) A semiconductor wafer with a heteroepitaxial layer and a method for producing the wafer
CN109072427A (en) Chamber liner for high-temperature process