TW200736420A - Susceptor and apparatus for manufacturing epitaxial wafer - Google Patents
Susceptor and apparatus for manufacturing epitaxial waferInfo
- Publication number
- TW200736420A TW200736420A TW096104583A TW96104583A TW200736420A TW 200736420 A TW200736420 A TW 200736420A TW 096104583 A TW096104583 A TW 096104583A TW 96104583 A TW96104583 A TW 96104583A TW 200736420 A TW200736420 A TW 200736420A
- Authority
- TW
- Taiwan
- Prior art keywords
- face
- wafer
- susceptor
- inner peripheral
- wafer mounting
- Prior art date
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
This invention provides a susceptor, which can suppress a variation in the thickness of an epitaxial film in a substrate wafer on its surface peripheral part, and an apparatus for manufacturing an epitaxial wafer. An approximately disk-shaped wafer mounting part (21) and an approximately ring plate-shaped peripheral part (22) are provided on a susceptor (2). The wafer mounting part (21) has a larger outside diameter than a substrate wafer (W). The peripheral part (22) has an inner peripheral face (22A), which stands so as to surround the periphery of the wafer mounting part (21), and an upper face (22B) protruded outward from the upper end of the inner peripheral face (22A) along the mounting face (21A) of the wafer mounting part (21). A vapor growth control part (23), formed of SiO2 which is less likely to react with a reactive gas as compared with an SiC film, is provided so that the inner peripheral face (23A) conforms to the inner peripheral face (22A) in the peripheral part (22) and the upper face (23B) conforms to the upper face (22B) in the peripheral part (22).
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006032878 | 2006-02-09 | ||
JP2007027113A JP2007243167A (en) | 2006-02-09 | 2007-02-06 | Susceptor and apparatus for manufacturing epitaxial wafer |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200736420A true TW200736420A (en) | 2007-10-01 |
Family
ID=38588347
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW096104583A TW200736420A (en) | 2006-02-09 | 2007-02-08 | Susceptor and apparatus for manufacturing epitaxial wafer |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2007243167A (en) |
TW (1) | TW200736420A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105800547A (en) * | 2016-04-08 | 2016-07-27 | 厦门大学 | Temporary bonding method for wafer-level ultra-thin silicon wafer in chemical-mechanical polishing |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5092975B2 (en) * | 2008-07-31 | 2012-12-05 | 株式会社Sumco | Epitaxial wafer manufacturing method |
JP5659493B2 (en) * | 2010-01-18 | 2015-01-28 | 信越半導体株式会社 | Vapor growth method |
JP5604907B2 (en) * | 2010-02-25 | 2014-10-15 | 信越半導体株式会社 | Semiconductor substrate support susceptor for vapor phase growth, epitaxial wafer manufacturing apparatus, and epitaxial wafer manufacturing method |
KR101496572B1 (en) | 2012-10-16 | 2015-02-26 | 주식회사 엘지실트론 | Susceptor for Epitaxial Growth And Epitaxial Growth Method |
KR101496582B1 (en) | 2013-11-25 | 2015-02-27 | 주식회사 엘지실트론 | Susceptor for Manufacturing Epitaxial Wafer |
JP6341083B2 (en) | 2014-12-25 | 2018-06-13 | 株式会社Sumco | Epitaxial silicon wafer manufacturing method |
DE102017206671A1 (en) * | 2017-04-20 | 2018-10-25 | Siltronic Ag | A susceptor for holding a wafer having an orientation notch during deposition of a film on a front side of the wafer and methods for depositing the film using the susceptor |
JP7147551B2 (en) * | 2018-12-27 | 2022-10-05 | 株式会社Sumco | Vapor deposition apparatus and carrier used therefor |
KR102239849B1 (en) * | 2021-03-17 | 2021-04-13 | (주)지비유 데이터링크스 | System for providing and storing cctv video based on customized video layout according to the purpose of cctv video monitoring for reducing power consumption |
-
2007
- 2007-02-06 JP JP2007027113A patent/JP2007243167A/en not_active Withdrawn
- 2007-02-08 TW TW096104583A patent/TW200736420A/en unknown
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105800547A (en) * | 2016-04-08 | 2016-07-27 | 厦门大学 | Temporary bonding method for wafer-level ultra-thin silicon wafer in chemical-mechanical polishing |
Also Published As
Publication number | Publication date |
---|---|
JP2007243167A (en) | 2007-09-20 |
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